WorldWideScience

Sample records for annealing induced extraordinary

  1. Gold Nanohole Array with Sub-1 nm Roughness by Annealing for Sensitivity Enhancement of Extraordinary Optical Transmission Biosensor

    Science.gov (United States)

    Zhang, Jian; Irannejad, Mehrdad; Yavuz, Mustafa; Cui, Bo

    2015-05-01

    Nanofabrication technology plays an important role in the performance of surface plasmonic devices such as extraordinary optical transmission (EOT) sensor. In this work, a double liftoff process was developed to fabricate a series of nanohole arrays of a hole diameter between 150 and 235 nm and a period of 500 nm in a 100-nm-thick gold film on a silica substrate. To improve the surface quality of the gold film, thermal annealing was conducted, by which an ultra-smooth gold film with root-mean-square (RMS) roughness of sub-1 nm was achieved, accompanied with a hole diameter shrinkage. The surface sensitivity of the nanohole arrays was measured using a monolayer of 16-mercaptohexadecanoic acid (16-MHA) molecule, and the surface sensitivity was increased by 2.5 to 3 times upon annealing the extraordinary optical transmission (EOT) sensor.

  2. Extraordinary Tales

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 20; Issue 10. Extraordinary Tales: Parasites Hijacking the Minds of Hosts. Felix Bast. General Article Volume 20 Issue 10 October 2015 pp 893-902. Fulltext. Click here to view fulltext PDF. Permanent link:

  3. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  4. Annealing-induced Fe oxide nanostructures on GaAs

    OpenAIRE

    Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

    2005-01-01

    We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

  5. Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

    Science.gov (United States)

    Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

    2018-04-01

    In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

  6. Propagating self-sustained annealing of radiation-induced interstitial complexes

    International Nuclear Information System (INIS)

    Bokov, P M; Selyshchev, P A

    2016-01-01

    A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions. (paper)

  7. Annealing Induced Softening in Deformed AI-4043 Alloy

    International Nuclear Information System (INIS)

    Saad, G.; Fawzy, A.; Soliman, H.N.; Mohammed, Gh.; Fayek, S.A.

    2011-01-01

    The present paper is devoted to study the effect of annealing temperature for different annealing periods of time on the structure and consequently on the tensile properties of Al-4043 alloy. The obtained results showed that the microstructure of AI-4043 alloy is characterized by the presence of spherically shaped Si-particles, which were found to be uniformly distributed within the AI-matrix. Stress-strain characterizations of AI-4043 samples annealed at different temperatures (T a = 573, 673 and 773 K) for different periods of time (t a = 0.5, 1,2.5,5 and 10 h), showed that the tensile parameters; yield stress ε y 0.2 and fracture stress ε f were decreased with increasing Ta and/or ta while the total strain ε T was increased. This was interpreted in terms of growth of Si-particles with increasing T a and/or t a . Attention has been also paid to the role of the minor elements Fe, Cu and Ti on the structure and tensile response behavior of the alloy under investigation

  8. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  9. Raman Spectroscopy Study of Annealing-Induced Effects on Graphene Prepared by Micromechanical Exfoliation

    International Nuclear Information System (INIS)

    Song, Ji Eun; Ko, Taeg Yeoung; Ryu, Sun Min

    2010-01-01

    Raman spectroscopy was combined with AFM to investigate the effects of thermal annealing on the graphene samples prepared by the widely used micromechanical exfoliation method. Following annealing cycles, adhesive residues were shown to contaminate graphene sheets with thin molecular layers in their close vicinity causing several new intense Raman bands. Detailed investigation shows that the Raman scattering is very strong and may be enhanced by the interaction with graphene. Although the current study does not pinpoint detailed origins for the new Raman bands, the presented results stress that graphene prepared by the above method may require extra cautions when treated with heat or possibly solvents. Since its isolation from graphite, graphene has drawn a lot of experimental and theoretical research. These efforts have been mostly in pursuit of various applications such as electronics, sensors, stretchable transparent electrodes, and various composite materials. To accomplish such graphene-based applications, understanding chemical interactions of this new material with environments during various processing treatments will become more important. Since thermal annealing is widely used in various research of graphene for varying purposes such as cleaning, nanostructuring, reactions, etc., understanding annealing-induced effects is prerequisite to many fundamental studies of graphene. In this regard, it is to be noted that there has been a controversy on the cause of the annealing-induced hole doping in graphene

  10. Annealing-induced recovery of indents in thin Au(Fe bilayer films

    Directory of Open Access Journals (Sweden)

    Anna Kosinova

    2016-12-01

    Full Text Available We employed depth-sensing nanoindentation to produce ordered arrays of indents on the surface of 50 nm-thick Au(Fe films deposited on sapphire substrates. The maximum depth of the indents was approximately one-half of the film thickness. The indented films were annealed at a temperature of 700 °C in a forming gas atmosphere. While the onset of solid-state dewetting was observed in the unperturbed regions of the film, no holes to the substrate were observed in the indented regions. Instead, the film annealing resulted in the formation of hillocks at the indent locations, followed by their dissipation and the formation of shallow depressions nearby after subsequent annealing treatments. This annealing-induced evolution of nanoindents was interpreted in terms of annihilation of dislocation loops generated during indentation, accompanied by the formation of nanopores at the grain boundaries and their subsequent dissolution. The application of the processes uncovered in this work show great potential for the patterning of thin films.

  11. Annealing of radiation-induced defects in vanadium and vanadium-titanium alloys

    International Nuclear Information System (INIS)

    Leguey, T.

    1996-01-01

    The annealing of defects induced by electron irradiation up to a dose of 6.10 21 m -2 at T<293 K has been investigated in single-crystals of pure vanadium and in vanadium-titanium alloys with compositions 0.3, 1 and 5 at.% Ti using positron annihilation spectroscopy. The recovery of the positron annihilation parameters in V single-crystals indicates that the defect annealing takes place in the temperature range 410-470 K without formation of microvoids for the present irradiation conditions. For the alloys the recovery onset is shifted to 460 K, the width of the annealing stage is gradually broadened with increasing Ti content, and microvoids are formed for annealing temperatures at the end of the recovery stage. The results show that the vacancy release from vacancy-interstitial impurity pairs and subsequent recombination with interstitial loops is the mechanism of the recovery in pure V. For V-Ti alloys, vacancy-Ti-interstitial impurity complexes and vacancy-Ti pairs appear to be the defects responsible for the positron trapping. The broadening of the recovery stage with increasing Ti content indicates that solute Ti is a very effective trap for vacancies in V. (orig.)

  12. Annealing study on radiation-induced defects in 6H-SiC

    International Nuclear Information System (INIS)

    Pinheiro, M.V.B.; Lingner, T.; Caudepon, F.; Greulich-Weber, S.; Spaeth, J.M.

    2004-01-01

    We present the results of a systematic isochronal annealing investigation of vacancy-related defects in electron-irradiated n-type 6H-SiC:N. A series of 10 samples cut from a commercial wafer and annealed up to 1200 C after electron-irradiation (1.5 x 10 18 cm -3 ) was characterized with photoluminescence (PL), Magnetic circular dichroism of the absorption (MCDA) and conventional electron paramagnetic resonance (EPR). Apart from less stable triplet-related defects which vanished between 150 C and 300 C, the thermal behavior of three radiation-induced defects was studied: the silicon vacancy (V Si ), the carbon-antisite-carbon-vacancy pair (C Si -V C ) and the D1 center. Their annealing behavior showed that the destruction of the isolated V Si between 750 C and 900 C is followed by the formation of thermally more stable C Si -V C pairs, a result that has been theoretically predicted recently. By further heating the samples the C Si -V C pairs are annealed out between 900 C and 1050 C and were followed by an increase in the D1 center concentration. (orig.)

  13. Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

    Science.gov (United States)

    Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

    2017-05-01

    As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

  14. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    International Nuclear Information System (INIS)

    Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bravo, D.; Lopez, F.J.; Fernandez, M.; Martinez, F.L.

    2003-01-01

    The effect of rapid thermal annealing (RTA) processes on the structural properties of SiO x N y H z films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH 4 , O 2 and N 2 as precursor gases. For SiO x N y H z films with composition close to that of SiO 2 , which have a very low H content, RTA induces thermal relaxation of the lattice and improvement of the structural order. For films of intermediate composition and of compositions close to SiN y H z , the main effect of RTA is the release of H at high temperatures (T>700 deg. C). This H release is more significant in films containing both Si-H and N-H bonds, due to cooperative reactions between both kinds of bonds. In these films the degradation of structural order associated to H release prevails over thermal relaxation, while in those films with only N-H bonds, thermal relaxation predominates. For annealing temperatures in the 500-700 deg. C range, the passivation of dangling bonds by the nonbonded H in the films and the transition from the paramagnetic state to the diamagnetic state of the K center result in a decrease of the density of paramagnetic defects. The H release observed at high annealing temperatures is accompanied by an increase of density of paramagnetic defects

  15. Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

    Science.gov (United States)

    Boninelli, S.; Milazzo, R.; Carles, R.; Houdellier, F.; Duffy, R.; Huet, K.; La Magna, A.; Napolitani, E.; Cristiano, F.

    2018-05-01

    Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 × 1020 cm-3) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom βPs = +0.7 ± 0.1 Å3. This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work.

  16. Structural changes in the crystal-amorphous interface of isotactic polypropylene film induced by annealing and γ-irradiation

    International Nuclear Information System (INIS)

    Nishimoto, Sei-ichi; Seike, Hideo; Chaisupakitsin, M.; Yoshii, Fumio; Makuuchi, Keizo.

    1995-01-01

    Annealing and radiation effects on the microstructures of isotactic polypropylenes, homopolymer and ethylene (<2.3 wt%) incorporated random copolymers, in the solid state were studied to get mechanistic insight into the modification and degradation of mechanical properties. The growth of helical conformation of isotactic chains in the crystal-amorphous interface was induced to greater extent by γ-irradiation, while the transition from smectic to monoclinic modifications in the crystal phase occurred simultaneously by annealing. The yield stress of the polypropylene films increased with the increased content of helical conformation as the result of annealing and/or γ-irradiation. (author)

  17. Microstructural evolution of radiation induced defects in ZnO during isochronal annealing

    International Nuclear Information System (INIS)

    Brunner, S.; Puff, W.; Balogh, A.G.

    1999-01-01

    In this study the authors discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2 x 10 18 p/cm 2 or with 1 MeV electrons to a fluence of 1 x 10 18 e/cm 2 . The investigation was performed with positron lifetime and Doppler-Broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons

  18. Rapid hardening induced by electric pulse annealing in nanostructured pure aluminum

    DEFF Research Database (Denmark)

    Zeng, Wei; Shen, Yao; Zhang, Ning

    2012-01-01

    Nanostructured pure aluminum was fabricated by heavy cold-rolling and then subjected to recovery annealing either by applying electric pulse annealing or by traditional air furnace annealing. Both annealing treatments resulted in an increase in yield strength due to the occurrence of a “dislocation...... source-limited hardening” mechanism. However, the hardening kinetics was substantially faster for the electric pulse annealed material. Detailed microstructural characterization suggested that the rapid hardening during electric pulse annealing is related to an enhanced rate of recovery of dislocation...

  19. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  20. Ordinary and extraordinary means.

    Science.gov (United States)

    Gillon, R

    1986-01-25

    The Roman Catholic doctrine of ordinary and extraordinary means in patient care decisions is the subject of this essay in Gillon's series on medical ethics. He briefly traces the Church history of this doctrine, which holds that saving life is not obligatory if doing so would be excessively burdensome or disproportionate in relation to the expected benefits. The burdens and benefits are to be weighed in the context of "circumstances of persons, places, times, and cultures," and factors such as the costs and risks of undergoing a proposed treatment may be considered. Gillon also notes the disagreement among Roman Catholic commentators over whether it is ever permissible to discontinue feeding as a burdensome, extraordinary treatment. He concludes that, despite different weightings of harms and benefits, Roman Catholic and non-Catholic thinkers are in accord over the appropriate moral approach to deciding when treatment is not obligatory.

  1. Hydrological Regimes of Small Catchments in the High Tatra Mountains Before and After Extraordinary Wind-Induced Deforestation

    Science.gov (United States)

    Holko, Ladislav; Hlavata, Helena; Kostka, Zdenek; Novak, Jan

    2009-01-01

    The paper presents the results of rainfall-runoff data analysis for small catchments of the upper Poprad River affected by wind-induced deforestation in November 2004. Before-event and afterevent measured data were compared in order to assess the impact of deforestation on hydrological regimes. Several characteristics were used including water balance, minimum and maximum runoff, runoff thresholds, number of runoff events, selected characteristics of events, runoff coefficients, and flashiness indices. Despite increased spring runoff minima, which in one catchment (Velick Creek) exceeded previously observed values after deforestation took place, it can be generally concluded that the impact of the deforestation was not clearly manifested in the analyzed hydrological data.

  2. Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

    Science.gov (United States)

    Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

    2018-04-01

    Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

  3. Air annealing induced transformation of cubic CdSe microspheres into hexagonal nanorods and micro-pyramids

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, Institute of Science, Mumbai 400032, M.S. (India); Lu, Shih-Yuan, E-mail: sylu@mx.nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu 30013, Taiwan (China)

    2015-08-15

    Highlights: • Nanocrystalline CdSe thin films were deposited using inexpensive CBD method. • Air annealing induced structural and interesting morphological transformation. • The as-deposited CdSe thin films showed a blue shift in its optical spectra. • The films showed a red shift in their optical spectra after annealing. - Abstract: CdSe thin films have been deposited onto glass substrates using a chemical bath deposition method at relatively low temperatures (40 °C). The precursors used for the deposition of the thin films are cadmium nitrate hexahydrate, freshly prepared sodium selenosulfate solution and aqueous ammonia solution as a complex as well as pH adjusting reagent. In order to study the influence of air annealing on their physicochemical properties, the as-deposited CdSe thin films were further annealed at 200 °C and 400 °C for 3 h in air atmosphere. Significant changes in the morphology and photonic properties were clearly observed after the thermal annealing of the CdSe thin films. The as-deposited CdSe films grow with the cubic phase that transforms into mixed cubic and hexagonal wurtzite phase with improved crystalline quality of the films after the air annealing. Morphological observation reveals that the as-deposited thin films grow with multilayer that consists of network or mesh like structure, uniformly deposited on the glass substrate over which microspheres are uniformly distributed. After air annealing, CdSe nanorods emerged from the microspheres along with conversion of few microspheres into micro-pyramids. The UV–visible study illustrates that the as-deposited thin film shows blue shifts in its optical spectrum and the spectrum was red-shifted after annealing the CdSe thin films. The band gap of the CdSe thin films were found to be decreased after the thermal treatment.

  4. Solvent-annealing-induced nanowetting in templates: towards tailored polymer nanostructures.

    Science.gov (United States)

    Chen, Jiun-Tai; Lee, Chih-Wei; Chi, Mu-Huan; Yao, I-Chun

    2013-02-25

    We study the solvent-annealing-induced nanowetting in templates using porous anodic aluminum oxide membranes. The morphology of polystyrene and poly(methyl methacrylate) nanostructures can be controlled, depending on whether the swollen polymers are in the partial or complete wetting regimes, which are characterized by the spreading coefficient. When the swollen polymers are in the partial wetting regime, polymers wet the nanopores by capillary action, resulting in the formation of polymer nanorods. When the swollen polymers are in the complete wetting regime, polymers form wetting layers in the nanopores, resulting in the formation of polymer nanotubes. The solubility parameters of polymers and solvents are also used to predict the wetting behavior of swollen polymers in cylindrical geometry. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

    International Nuclear Information System (INIS)

    Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

    2008-01-01

    Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

  6. GnRH-induced Ca2+ signaling patterns and gonadotropin secretion in pituitary gonadotrophs. Functional adaptations to both ordinary and extraordinary physiological demands

    Directory of Open Access Journals (Sweden)

    María Luisa eDurán-Pastén

    2013-09-01

    Full Text Available Pituitary gonadotrophs are a small fraction of the anterior pituitary population, yet they synthesize gonadotropins: luteinizing (LH and follicle stimulating (FSH, essential for gametogenesis and steroidogenesis. LH is secreted via a regulated pathway while FSH release is mostly constitutive and controlled by synthesis. Although gonadotrophs fire action potentials spontaneously, the intracellular Ca2+ rises produced do not influence secretion, which is mainly driven by Gonadotropin Releasing Hormone (GnRH, a decapeptide synthesized in the hypothalamus and released in a pulsatile manner into the hypophyseal portal circulation. GnRH binding to G protein coupled receptors triggers Ca2+ mobilization from InsP3-sensitive intracellular pools, generating the global Ca2+ elevations necessary for secretion. Ca2+ signaling responses to increasing [GnRH] vary in stereotyped fashion from subthreshold to baseline spiking (oscillatory, to biphasic (spike-oscillatory or spike-plateau. This progression varies somewhat in gonadotrophs from different species and biological preparations. Both baseline spiking and biphasic GnRH-induced Ca2+ signals control LH/FSH synthesis and exocytosis. Estradiol and testosterone regulate gonadotropin secretion through feedback mechanisms, while FSH synthesis and release are influenced by activin, inhibin and follistatin. Adaptation to physiological events like the estrous cycle, involves changes in GnRH sensitivity and LH/FSH synthesis: in proestrus, estradiol feedback regulation abruptly changes from negative to positive, causing the pre-ovulatory LH surge. Similarly, when testosterone levels drop after orquiectomy the lack of negative feedback on pituitary and hypothalamus boosts both GnRH and LH secretion, gonadotrophs GnRH sensitivity increases and Ca2+ signaling patterns change. In addition, gonadotrophs proliferate and grow. These plastic changes denote a more vigorous functional adaptation in response to an extraordinary

  7. High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

    Science.gov (United States)

    Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

    2018-08-15

    Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

  8. Precipitate-induced R-phase in martensitic transformation of as-spun and annealed Ti51Ni49 ribbons

    International Nuclear Information System (INIS)

    Wu, Ling-Mei; Chang, Shih-Hang; Wu, Shyi-Kaan

    2010-01-01

    Differential scanning calorimetry (DSC) results indicate that a two-step B2 → R → B19' martensitic transformation and a one-step B19' → B2 transformation exhibit in as-spun and in 200-600 o C annealed Ti 51 Ni 49 ribbons. Guinier-Preston (GP) zones and Ti 2 Ni precipitates are formed in ribbons annealed at ≤300 o C and ≥400 o C, respectively, and a conspicuous increase of DSC transformation peak temperature occurs in between 300 o C and 400 o C. The sizes of GP zones and Ti 2 Ni precipitates increase with increased annealing temperature. Transmission electron microscope (TEM) observations show that GP zones can induce the R-phase and both of them are formed along B2 directions. DSC and TEM tests show that Ti 2 Ni precipitates can induce the R-phase more than GP zones and the induced R-phase plates are also found along B2 directions. Experimental results show that the growing direction of R-phase plates is strongly confined by that of GP zones and Ti 2 Ni precipitates. The length of R-phase plates can reach about 2 μm in 300 o C annealed ribbon.

  9. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

  10. Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

    Science.gov (United States)

    Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

    2013-03-01

    The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

  11. Thermal annealing of high dose radiation induced damage at room temperature in alkali halides. Stored energy, thermoluminiscence and colouration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminiscence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminiscence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KCl samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose. Capacity of alkali halides to sotore energy by irradiation increases as the cation size decreases. It appears that most of the observed release is not related to annealing processes of the radiation induced anion Frenkel pairs. The existence of damage in the cation sublattice with which this energy release might be related is considered. (auth.)

  12. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  13. Annealing induced structural evolution and electrochromic properties of nanostructured tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ching-Lin [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Lin, Chung-Kwei [School of Dental Technology, Taipei Medical University, Taipei City 110, Taiwan, ROC (China); Wang, Chun-Kai [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Wang, Sheng-Chang [Department of Mechanical Engineering, Southern Taiwan University, Tainan 710, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: JLH888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2013-12-31

    The effect of microstructure on the optical and electrochemical properties of nanostructured tungsten oxide films was evaluated as a function of annealing temperature. The films using block copolymer as the template were prepared from peroxotungstic acid (PTA) by spin-coating onto the substrate and post-annealed at 250–400 °C to form tungsten oxide films with nanostructure. The microstructure of the films was measured by X-ray diffraction and surface electron microscopy. The films annealed at temperatures below 300 °C are characterized by amorphous or nanocrystalline structures with a pore size of less than 10 nm. The evaluated annealing temperature caused a triclinic crystalline structure and microcracks. Cyclic voltammetry measurements were performed in a LiClO{sub 4}-propylene carbonate electrolyte. The results showed that the ion inserted capacity were maximized for films annealed at 300 °C and decreased with the increasing of annealing temperature. The electrochromic properties of the nanostructured tungsten oxide films were evaluated simultaneously by potentiostat and UV–vis spectroscopy. The films annealed at 300 °C exhibit high transmission modulation (∆T ∼ 40%) at λ = 633 nm and good kinetic properties. As a result, the correlation between the microstructure and kinetic properties was established, and the electrochromic properties have been demonstrated. - Highlights: • Surfactant-assisted WO{sub 3} films have been prepared by sol–gel method. • Nanostructure of porous WO{sub 3} film is retained after crystallization. • Kinetic properties of WO{sub 3} can be improved by nanostructure and crystallinity.

  14. In situ study of annealing-induced strain relaxation in diamond nanoparticles using Bragg coherent diffraction imaging

    Directory of Open Access Journals (Sweden)

    S. O. Hruszkewycz

    2017-02-01

    Full Text Available We observed changes in morphology and internal strain state of commercial diamond nanocrystals during high-temperature annealing. Three nanodiamonds were measured with Bragg coherent x-ray diffraction imaging, yielding three-dimensional strain-sensitive images as a function of time/temperature. Up to temperatures of 800 °C, crystals with Gaussian strain distributions with a full-width-at-half-maximum of less than 8×10−4 were largely unchanged, and annealing-induced strain relaxation was observed in a nanodiamond with maximum lattice distortions above this threshold. X-ray measurements found changes in nanodiamond morphology at temperatures above 600 °C that are consistent with graphitization of the surface, a result verified with ensemble Raman measurements.

  15. Annealing Behavior of Al-Implantation-Induced Disorder in 4H-SiC

    International Nuclear Information System (INIS)

    Zhang, Yanwen; Weber, William J.; Jiang, Weilin; Shutthanandan, V.; Thevuthasan, Suntharampillai; Janson, Martin; Hallen, Anders

    2004-01-01

    Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al 2 2+ and subsequently annealed at elevated temperatures. Rutherford backscattering spectrometry (RBS) results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy (SIMS) is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that each implanted Al stabilizes or inhibits recovery for an equivalent of a few hundred Si interstitials under the current experimental conditions

  16. Annealing-Induced Bi Bilayer on Bi2Te3 Investigated via Quasi-Particle-Interference Mapping.

    Science.gov (United States)

    Schouteden, Koen; Govaerts, Kirsten; Debehets, Jolien; Thupakula, Umamahesh; Chen, Taishi; Li, Zhe; Netsou, Asteriona; Song, Fengqi; Lamoen, Dirk; Van Haesendonck, Chris; Partoens, Bart; Park, Kyungwha

    2016-09-27

    Topological insulators (TIs) are renowned for their exotic topological surface states (TSSs) that reside in the top atomic layers, and hence, detailed knowledge of the surface top atomic layers is of utmost importance. Here we present the remarkable morphology changes of Bi2Te3 surfaces, which have been freshly cleaved in air, upon subsequent systematic annealing in ultrahigh vacuum and the resulting effects on the local and area-averaging electronic properties of the surface states, which are investigated by combining scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and Auger electron spectroscopy (AES) experiments with density functional theory (DFT) calculations. Our findings demonstrate that the annealing induces the formation of a Bi bilayer atop the Bi2Te3 surface. The adlayer results in n-type doping, and the atomic defects act as scattering centers of the TSS electrons. We also investigated the annealing-induced Bi bilayer surface on Bi2Te3 via voltage-dependent quasi-particle-interference (QPI) mapping of the surface local density of states and via comparison with the calculated constant-energy contours and QPI patterns. We observed closed hexagonal patterns in the Fourier transform of real-space QPI maps with secondary outer spikes. DFT calculations attribute these complex QPI patterns to the appearance of a "second" cone due to the surface charge transfer between the Bi bilayer and the Bi2Te3. Annealing in ultrahigh vacuum offers a facile route for tuning of the topological properties and may yield similar results for other topological materials.

  17. Annealing-induced near-surface ordering in disordered Ga0.5In0.5P

    International Nuclear Information System (INIS)

    Luo, J.S.; Olson, J.M.; Wu, M.

    1995-01-01

    Most samples of Ga 0.5 In 0.5 P grown by metalorganic chemical vapor deposition (MOCVD) on (001)-like surfaces are partially ordered and exhibit distinctive reflectance difference spectral (RDS) features associated with the anisotropic properties of the ordered bulk structure. It is known that the ordering is not a ground-state property of the bulk but is surface-induced during growth. On the other hand, Ga 0.5 In 0.5 P grown by liquid-phase epitaxy (LPE) is completely disordered, and it has been shown that its RD spectrum is essentially featureless. In this article, we present a study of the effects of annealing (in a PH 3 /H 2 atmosphere) on LPE-grown Ga 0.5 In 0.5 P using ex situ and in situ RDS. The annealing temperatures and times used in this study (650 degree C and tens of minutes) have virtually no effect on the bulk optical or structural properties of MOCVD-grown Ga 0.5 In 0.5 P. For LPE-grown Ga 0.5 In 0.5 P, we find that annealing induces bulk-like RDS features at both E 0 and E 1 with line shapes similar to those observed for MOCVD-grown ordered Ga 0.5 In 0.5 P. These bulk-like spectral features are, however, due to near-surface reconstruction of Ga and In because they are effectively quenched by exposure to air. Also, the E 0 feature becomes sharper and both the E 0 and the E 1 features red-shift as the annealing process is prolonged. This indicates that this reconstruction is kinetically limited, presumably by the slow interdiffusion of Ga and In necessary to achieve the ordered bulk-like structure. copyright 1995 American Vacuum SocietyGa 0.5 In 0.5 P

  18. Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

    International Nuclear Information System (INIS)

    Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

    1999-01-01

    The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

  19. Thermal annealing of high dose radiation induced damage at room temperature in alkaline. Stored energy, thermoluminescence and coloration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminescence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminescence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KC1 samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose.Capacity of alkali halides to store energy by irradiation increases as the cation size decreases. (Author) 51 refs

  20. Precipitation-induced of partial annealing of Ni-rich NiTi shape memory alloy

    Science.gov (United States)

    Nashrudin, Muhammad Naqib; Mahmud, Abdus Samad; Mohamad, Hishamiakim

    2018-05-01

    NiTi shape memory alloy behavior is very sensitive to alloy composition and heat treatment processes. Thermomechanical behavior of near-equiatomic alloy is normally enhanced by partial anneal of a cold-worked specimen. The shape memory behavior of Ni-rich alloy can be enhanced by ageing precipitation. This work studied the effect of simultaneous partial annealing and ageing precipitation of a Ni-rich cold drawn Ti-50.9at%Ni wire towards martensite phase transformation behavior. Ageing treatment of a non-cold worked specimen was also done for comparison. It was found that the increase of heat treatment temperature caused the forward transformation stress to decrease for the cold worked and non-cold worked specimens. Strain recovery on the reverse transformation of the cold worked wire improved compared to the non-cold worked wire as the temperature increased.

  1. Anneal-induced transformations in the transport and magnetic properties of CoCu granulars

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, M.G.M. E-mail: mari@if.ufrgs.br; Antunes, A.B.; Bracho Rodriguez, G.J.; Baibich, M.N

    2001-05-01

    The electrical and magnetic properties of granular Co{sub 5}Cu{sub 95}, Co{sub 10}Cu{sub 90} and Co{sub 15}Cu{sub 85} ribbons treated with different annealing procedures were measured from helium to room temperatures. The isochronous anneals had fixed heating rate and the transformations were followed by 'in situ' resistivity measurements. We found that the transformation occurs at nearly the same region of temperature for the three compositions. Besides, our results for magnetoresistance on Co{sub 10}Cu{sub 90} could be understood in the light of the re-dissolution of Co into the Cu matrix, as suggested in previous works (Miranda et al., J. Magn. Magn. Mater. 185 (1998) 331; da Silva et al., IEEE Trans. Mag., to appear)

  2. Anneal-induced transformations in the transport and magnetic properties of CoCu granulars

    International Nuclear Information System (INIS)

    Miranda, M.G.M.; Antunes, A.B.; Bracho Rodriguez, G.J.; Baibich, M.N.

    2001-01-01

    The electrical and magnetic properties of granular Co 5 Cu 95 , Co 10 Cu 90 and Co 15 Cu 85 ribbons treated with different annealing procedures were measured from helium to room temperatures. The isochronous anneals had fixed heating rate and the transformations were followed by 'in situ' resistivity measurements. We found that the transformation occurs at nearly the same region of temperature for the three compositions. Besides, our results for magnetoresistance on Co 10 Cu 90 could be understood in the light of the re-dissolution of Co into the Cu matrix, as suggested in previous works (Miranda et al., J. Magn. Magn. Mater. 185 (1998) 331; da Silva et al., IEEE Trans. Mag., to appear)

  3. Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

    International Nuclear Information System (INIS)

    Beeler, J.R. Jr.; Beeler, M.F.

    1979-06-01

    This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions

  4. Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Beeler, J.R. Jr.; Beeler, M.F.

    1979-06-01

    This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions. (FS)

  5. Annealing induced low coercivity, nanocrystalline Co–Fe–Si thin films exhibiting inverse cosine angular variation

    Energy Technology Data Exchange (ETDEWEB)

    Hysen, T., E-mail: hysenthomas@gmail.com [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Al-Harthi, Salim; Al-Omari, I.A. [Department of Physics, Sultan Qaboos University, PC 123, Muscat, Sultanate of Oman (Oman); Geetha, P.; Lisha, R. [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India); Ramanujan, R.V. [School of Materials Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Sakthikumar, D. [Graduate School of Interdisciplinary New Science, Toyo University, Kawagoe, Saitama (Japan); Anantharaman, M.R., E-mail: mra@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin 682022, Kerala (India)

    2013-09-15

    Co–Fe–Si based films exhibit high magnetic moments and are highly sought after for applications like soft under layers in perpendicular recording media to magneto-electro-mechanical sensor applications. In this work the effect of annealing on structural, morphological and magnetic properties of Co–Fe–Si thin films was investigated. Compositional analysis using X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a native oxide surface layer consisting of oxides of Co, Fe and Si on the surface. The morphology of the as deposited films shows mound like structures conforming to the Volmer–Weber growth model. Nanocrystallisation of amorphous films upon annealing was observed by glancing angle X-ray diffraction and transmission electron microscopy. The evolution of magnetic properties with annealing is explained using the Herzer model. Vibrating sample magnetometry measurements carried out at various angles from 0° to 90° to the applied magnetic field were employed to study the angular variation of coercivity. The angular variation fits the modified Kondorsky model. Interestingly, the coercivity evolution with annealing deduced from magneto-optical Kerr effect studies indicates a reverse trend compared to magetisation observed in the bulk. This can be attributed to a domain wall pinning at native oxide layer on the surface of thin films. The evolution of surface magnetic properties is correlated with morphology evolution probed using atomic force microscopy. The morphology as well as the presence of the native oxide layer dictates the surface magnetic properties and this is corroborated by the apparent difference in the bulk and surface magnetic properties. - Highlights: • The relation between grain size and magnetic properties in Co–Fe–Si thin films obeys the Herzer model. • Angular variation of coercivity is found to obey the Kondorsky model. • The MOKE measurements provide further evidence for domain wall pinning.

  6. Temper embrittlement, irradiation induced phosphorus segregation and implications for post-irradiation annealing of reactor pressure vessels

    International Nuclear Information System (INIS)

    McElroy, R.J.; English, C.A.; Foreman, A.J.; Gage, G.; Hyde, J.M.; Ray, P.H.N.; Vatter, I.A.

    1999-01-01

    Three steels designated JPB, JPC and JPG from the IAEA Phase 3 Programme containing two copper and phosphorus levels were pre- and post-irradiation Charpy and hardness tested in the as-received (AR), 1200 C/0.5h heat treated (HT) and heat treated and 450 C/2000h aged (HTA) conditions. The HT condition was designed to simulate coarse grained heat-affected zones (HAZ's) and showed a marked sensitivity to thermal ageing in all three alloys. Embrittlement after thermal ageing was greater in the higher phosphorus alloys JPB and JPG. Charpy shifts due to thermal ageing of between 118 and 209 C were observed and accompanied by pronounced intergranular fracture, due to phosphorus segregation. The irradiation embrittlement response was complex. The low copper alloys, JPC and JPB, in the HT and HTA condition exhibited significant irradiation induced Charpy shift but very low or even negative hardness changes indicating non-hardening embrittlement. The higher copper alloy, JPG, also exhibited irradiation hardening in line with its copper content. Fractographic and microchemical studies indicated irradiation induced phosphorus segregation and a transition from cleavage to intergranular failure at grain boundary phosphorus concentrations above a critical level. The enhanced grain boundary phosphorus level increased with dose in agreement with a kinetic segregation model developed at Harwell. The relevance of the thermal ageing studies to RPV Annealing for Plant-Life Extension was identified early in the program. It is of concern that annealing of RPV's has been performed, or is proposed, at temperatures in the range 425--475 C for periods of about 1 week (168h). Much attention has been given to the use of in-situ hardness measurements and machining miniature Charpy and tensile specimens from belt-line plate and weld materials. However, HAZ's, often containing higher phosphorus levels than the present materials, have largely been ignored. A post-irradiation annealing (PIA

  7. Growth and surface modification of LaFeO3 thin films induced by reductive annealing

    International Nuclear Information System (INIS)

    Flynn, Brendan T.; Zhang, Kelvin H.L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

    2015-01-01

    Highlights: • LaFeO 3 was grown by molecular beam epitaxy on ZrO 2 :Y 2 O 3 . • The film was highly oriented but not single crystalline. • Angle resolved XPS revealed differences between surface and bulk oxygen. • Annealing the film in vacuum resulted in the sequential reduction of Fe cations. • A greater degree of Fe reduction was found at the surface. - Abstract: The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO 3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications

  8. Reactions and Diffusion During Annealing-Induced H(+) Generation in SOI Buried Oxides

    International Nuclear Information System (INIS)

    Devine, R.A.B.; Fleetwood, D.M.; Vanheusden, K; Warren, W.L.

    1999-01-01

    We report experimental results suggesting that mobile protons are generated at strained Si-O-Si bonds near the Si/SiO 2 interface during annealing in forming gas. Our data further suggest that the presence of the top Si layer plays a crucial role in the mobile H + generation process. Finally, we show that the diffusion of the reactive species (presumably H 2 or H 0 ) towards the H + generation sites occurs laterally along the buried oxide layer, and can be impeded significantly due to the presence of trapping sites in the buried oxide

  9. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

    International Nuclear Information System (INIS)

    Wang Yanrong; Yang Hong; Xu Hao; Luo Weichun; Qi Luwei; Zhang Shuxiang; Wang Wenwu; Zhu Huilong; Zhao Chao; Chen Dapeng; Ye Tianchun; Yan Jiang

    2017-01-01

    In the process of high- k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO 2 /HfO 2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. (paper)

  10. Three-dimensional block copolymer nanostructures by the solvent-annealing-induced wetting in anodic aluminum oxide templates.

    Science.gov (United States)

    Chu, Chiang-Jui; Chung, Pei-Yun; Chi, Mu-Huan; Kao, Yi-Huei; Chen, Jiun-Tai

    2014-09-01

    Block copolymers have been extensively studied over the last few decades because they can self-assemble into well-ordered nanoscale structures. The morphologies of block copolymers in confined geometries, however, are still not fully understood. In this work, the fabrication and morphologies of three-dimensional polystyrene-block-polydimethylsiloxane (PS-b-PDMS) nanostructures confined in the nanopores of anodic aluminum oxide (AAO) templates are studied. It is discovered that the block copolymers can wet the nanopores using a novel solvent-annealing-induced nanowetting in templates (SAINT) method. The unique advantage of this method is that the problem of thermal degradation can be avoided. In addition, the morphologies of PS-b-PDMS nanostructures can be controlled by changing the wetting conditions. Different solvents are used as the annealing solvent, including toluene, hexane, and a co-solvent of toluene and hexane. When the block copolymer wets the nanopores in toluene vapors, a perpendicular morphology is observed. When the block copolymer wets the nanopores in co-solvent vapors (toluene/hexane = 3:2), unusual circular and helical morphologies are obtained. These three-dimensional nanostructures can serve as naontemplates for refilling with other functional materials, such as Au, Ag, ZnO, and TiO2 . © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. 47 CFR 32.7600 - Extraordinary items.

    Science.gov (United States)

    2010-10-01

    ... FOR TELECOMMUNICATIONS COMPANIES Instructions For Other Income Accounts § 32.7600 Extraordinary items... extraordinary. Extraordinary events and transactions are distinguished by both their unusual nature and by the infrequency of their occurrence, taking into account the environment in which the company operates. This...

  12. Investigation of Near-Surface Defects Induced by Spike Rapid Thermal Annealing in c-SILICON Solar Cells

    Science.gov (United States)

    Liu, Guodong; Ren, Pan; Zhang, Dayong; Wang, Weiping; Li, Jianfeng

    2016-01-01

    The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J-V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm-3.

  13. Annealing temperature effects on the magnetic properties and induced defects in C/N/O implanted MgO

    Science.gov (United States)

    Li, Qiang; Ye, Bonian; Hao, Yingping; Liu, Jiandang; Kong, Wei; Ye, Bangjiao

    2013-02-01

    Virgin MgO single crystals were implanted with 70 keV C/N/O ions at room temperature to a dose of 2 × 1017/cm2. After implantation the samples showed room temperature hysteresis in magnetization loops. The annealing effects on the magnetic properties and induced defects of these samples were determined by vibrating sample magnetometer and positron annihilation spectroscopy, respectively. The experimental results indicate that ferromagnetism can be introduced to MgO single crystals by doping with C, N or introduction of Mg related vacancy defects. However, the Mg vacancies coexistence with C or N ions in the C-/N-implanted samples may play a negative role in magnetic performance in these MgO samples. The rapid increase of magnetic moment in O-implanted sample is attributed to the formation of new type of vacancy defects.

  14. Effect of Annealing in Magnetic Field on Ferromagnetic Nanoparticle Formation in Cu-Al-Mn Alloy with Induced Martensite Transformation.

    Science.gov (United States)

    Titenko, Anatoliy; Demchenko, Lesya

    2016-12-01

    The paper considers the influence of aging of high-temperature phase on subsequent martensitic transformation in Cu-Al-Mn alloy. The morphology of behavior of martensitic transformation as a result of alloy aging under annealing in a constant magnetic field with different sample orientation relatively to the field direction and without field was studied for direct control of the processes of martensite induction at cooling. Temperature dependences of electrical resistance, magnetic susceptibility, and magnetization, as well as field dependences of magnetization, and phase composition were found. The tendency to the oriented growth of precipitated ferromagnetic phase nanoparticles in a direction of applied field and to an increase of their volume fraction under thermal magnetic treatment of material that favors a reversibility of induced martensitic transformation is observed.

  15. Annealing of hydrogen-induced defects in RF-plasma-treated Si wafers: ex situ and in situ transmission electron microscopy studies

    International Nuclear Information System (INIS)

    Ghica, C; Nistor, L C; Vizireanu, S; Dinescu, G

    2011-01-01

    The smart-cut(TM) process is based on inducing and processing structural defects below the free surface of semiconductor wafers. The necessary defects are currently induced by implantation of light elements such as hydrogen or helium. An alternative softer way to induce shallow subsurface defects is by RF-plasma hydrogenation. To facilitate the smart-cut process, the wafers containing the induced defects need to be subjected to an appropriate thermal treatment. In our experiments, (0 0 1) Si wafers are submitted to 200 and 50 W hydrogen RF-plasma and are subsequently annealed. The samples are studied by transmission electron microscopy (TEM), before and after annealing. The plasma-introduced defects are {1 1 1} and {1 0 0} planar-like defects and nanocavities, all of them involving hydrogen. Many nanocavities are aligned into strings almost parallel to the wafer surface. The annealing is performed either by furnace thermal treatment at 550 deg. C, or by in situ heating in the electron microscope at 450, 650 and 800 deg. C during the TEM observations. The TEM microstructural studies indicate a partial healing of the planar defects and a size increase of the nanometric cavities by a coalescence process of the small neighbouring nanocavities. By annealing, the lined up nanometric voids forming chains in the as-hydrogenated sample coalesced into well-defined cracks, mostly parallel to the wafer surface.

  16. New Ideas: Ordinary is Extraordinary

    Directory of Open Access Journals (Sweden)

    Antonio Jose

    2004-06-01

    Full Text Available Abstract With the initial issue of this journal, a new challenge has been offered tothe world of sports nutrition: initiate "team oriented" research and clinical trials in order to make dynamic progress in terms of understandingand applying nutrition principals to the field of competitive sports. It is our further challenge that these teams think "outside the box" in terms of their approach to elucidating new concepts through which nutritional interventions might play a role in the regulation of muscle growth and repair, athletic performance and endurance, and mental acuity. What was once thought of as extraordinary might now be approached as ordinary, if the correct composition of "teams" were formed.

  17. Si diffusion in compositional disordering of Si-implanted GaAs/AlGaAs superlattices induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    Uematsu, Masashi; Yanagawa, Fumihiko

    1988-01-01

    The Si diffusion in Si-implanted GaAs/Al 0.5 Ga 0.5 As superlattices intermixed in the disrodering process induced by rapid thermal annealing (RTA), is investigated by means of secondary ion mass spectroscopy (SIMS). The SIMS profiles indicate that no fast Si diffusion occurs during the disordering, and the disordering occurs when the Si concentration exceeds 1 x 10 19 cm -3 , which is about three times larger than the threshold value for the disordering by furnace annealing (FA). The number of Si atoms which are allowed to pass through the heterointerface is considered to be essential for disordering. (author)

  18. Room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride induced by milling and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Bolokang, Amogelang S., E-mail: Sylvester.Bolokang@transnet.net [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Transnet Engineering, Product Development, Private Bag X 528, Kilnerpark, 0127 (South Africa); Tshabalala, Zamaswazi P. [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); Malgas, Gerald F. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville, 7535 (South Africa); Kortidis, Ioannis [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa); West Virginia University, Department of Mechanical & Aerospace Engineering, Evansdale Campus, Morgantown, WV, 26506 (United States); Swart, Hendrik C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA9300 (South Africa); Motaung, David E., E-mail: dmotaung@csir.co.za [DST/CSIR National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, Pretoria, 0001 (South Africa)

    2017-06-01

    We report on the room temperature ferromagnetism and CH{sub 4} gas sensing of titanium oxynitride prepared by milling and annealing at 1100 °C in a nitrogen gas environment. Structural analyses revealed a metastable orthorhombic TiO{sub 2} phase after milling for 120 h. The 120 h milled TiO{sub 2} particles and subsequently annealed in nitrogen gas at 1100 °C showed the formation of titanium oxynitride (TiO{sub x}N{sub y}) with a tetragonal crystal structure. An FCC metastable TiO{sub x}N{sub y} phase was also observed with a lattice parameter a = 4.235 Å. The vibrating sample magnetometer and electron paramagnetic analyses showed that the milled and TiO{sub x}N{sub y} samples possess room temperature ferromagnetism. Gas sensing measurements were carried out toward CH{sub 4} and H{sub 2} gases. The TiO{sub x}N{sub y} nanostructures demonstrated higher sensing response and selectivity to CH{sub 4} gas at room temperature. The enhanced response of 1010 and sensitivity of 50.12 ppm{sup -1} at a concentration of 20 ppm CH{sub 4} are associated with higher surface area, pore diameter and surface defects such as oxygen vacancies and Ti{sup 3+}, as evidenced from the Brunauer–Emmet–Teller, photoluminescence, electron paramagnetic resonance and x-ray photoelectron analyses. - Highlights: • Ball milled of TiO{sub 2} structure revealed metastable orthorhombic phase. • Upon nitridation tetragonal and FCC TiO{sub x}N{sub y} crystal structures were induced. • The magnetic properties of TiO{sub 2} nanoparticles was transformed by milling. • TiO{sub x}N{sub y} sensing response for CH{sub 4} gas at room temperature was high.

  19. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  20. Effect of Pre-Irradiation Annealing and Laser Modification on the Formation of Radiation-Induced Surface Color Centers in Lithium Fluoride

    Science.gov (United States)

    Voitovich, A. P.; Kalinov, V. S.; Novikov, A. N.; Radkevich, A. V.; Runets, L. P.; Stupak, A. P.; Tarasenko, N. V.

    2017-01-01

    It is shown that surface color centers of the same type are formed in the surface layer and in regions with damaged crystal structure inside crystalline lithium fluoride after γ-irradiation. Results are presented from a study of the effect of pre-irradiation annealing on the efficiency with which surface centers are formed in lithium fluoride nanocrystals. Raising the temperature for pre-irradiation annealing from room temperature to 250°C leads to a substantial reduction in the efficiency with which these centers are created. Surface color centers are not detected after γ-irradiation for pre-irradiation annealing temperatures of 300°C and above. Adsorption of atmospheric gases on the crystal surface cannot be regarded as a necessary condition for the formation of radiation-induced surface centers.

  1. Evolution of the radiation-induced defect structure in 316 type stainless steel after post-irradiation annealing

    Energy Technology Data Exchange (ETDEWEB)

    Van Renterghem, W., E-mail: wvrenter@sckcen.be; Konstantinović, M.J., E-mail: mkonstan@sckcen.be; Vankeerberghen, M., E-mail: mvankeer@sckcen.be

    2014-09-15

    Highlights: • TEM study of irradiated CW316 steel after post-irradiation annealing. • Frank loops were removed after annealing at 550 °C, by unfaulting and growing. • The cavity density decreases after annealing at 550 °C, but not completely removed. • Frank loop and cavity removal is controlled by the annealing temperature. • The dissolution of γ' precipitates is controlled by the iron diffusion length. - Abstract: The thermal stability of Frank loops, black dots, cavities and γ′ precipitates in an irradiated 316 stainless steel was studied by transmission electron microscopy. The samples were retrieved from a thimble tube irradiated at around 320 °C up to 80 dpa in a commercial nuclear power reactor, and thermally annealed, varying both annealing temperature and time. With increasing annealing temperature the density of all defects gradually decreased, resulting in the complete removal of Frank loops at 550 °C. In contrast to other defects, the density of the γ′ precipitates sharply decreased with increasing annealing time, which indicates that the dissolution of the γ′ precipitates is governed by the iron diffusion length.

  2. Iron phthalocyanine on Cu(111): Coverage-dependent assembly and symmetry breaking, temperature-induced homocoupling, and modification of the adsorbate-surface interaction by annealing.

    Science.gov (United States)

    Snezhkova, Olesia; Bischoff, Felix; He, Yuanqin; Wiengarten, Alissa; Chaudhary, Shilpi; Johansson, Niclas; Schulte, Karina; Knudsen, Jan; Barth, Johannes V; Seufert, Knud; Auwärter, Willi; Schnadt, Joachim

    2016-03-07

    We have examined the geometric and electronic structures of iron phthalocyanine assemblies on a Cu(111) surface at different sub- to mono-layer coverages and the changes induced by thermal annealing at temperatures between 250 and 320 °C by scanning tunneling microscopy, x-ray photoelectron spectroscopy, and x-ray absorption spectroscopy. The symmetry breaking observed in scanning tunneling microscopy images is found to be coverage dependent and to persist upon annealing. Further, we find that annealing to temperatures between 300 and 320 °C leads to both desorption of iron phthalocyanine molecules from the surface and their agglomeration. We see clear evidence of temperature-induced homocoupling reactions of the iron phthalocyanine molecules following dehydrogenation of their isoindole rings, similar to what has been observed for related tetrapyrroles on transition metal surfaces. Finally, spectroscopy indicates a modified substrate-adsorbate interaction upon annealing with a shortened bond distance. This finding could potentially explain a changed reactivity of Cu-supported iron phthalocyanine in comparison to that of the pristine compound.

  3. Annealing of radiation-induced defects in silicon in a simplified phenomenological model

    International Nuclear Information System (INIS)

    Lazanu, S.; Lazanu, I.

    2001-01-01

    The concentration of primary radiation-induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of incident particles, for different temperatures; the corresponding stationary solutions are also presented

  4. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  5. Spin-echo observation of radio frequency induced flux lattice annealing (RIFLA) in a type-II superconductor

    International Nuclear Information System (INIS)

    Clark, W.G.; Hanson, M.E.; Wong, W.H.

    1999-01-01

    We report the annealing of a strained flux line lattice (FLL) in 10 μm diameter type-II superconducting NbTi filaments by an RF magnetic field at 4.2 K in a magnetic field of 1 T. The strained FLL is prepared by slowly changing the direction of the applied magnetic field. When the RF magnetic field used to generate a 93 Nb NMR spin echo anneals the FLL, there is a corresponding reduction in the amplitude of the spin echo. Starting from an annealed condition, a rotation threshold of 3 mr is needed to produce enough FLL strain to be observed in these measurements. (orig.)

  6. Raman scattering in La1−xSrxFeO3−δ thin films: annealing-induced reduction and phase transformation

    International Nuclear Information System (INIS)

    Islam, Mohammad A; Xie, Yujun; Scafetta, Mark D; May, Steven J; Spanier, Jonathan E

    2015-01-01

    Raman scattering in thin film La 0.2 Sr 0.8 FeO 3−δ on MgO(0 0 1) collected at 300 K after different stages of annealing at selected temperatures T (300 K < T < 543 K, to 10 h) and analysis reveal changes in spectral characteristics due to a loss of oxygen, onset of oxygen vacancy-induced disorder, and activation of Raman-inactive modes that are attributed to symmetry lowering. The interpretation is further supported by carrier transport measurements under identical conditions showing orders of magnitude increase in the resistivity induced by oxygen loss. After prolonged annealing in air, evolution of the spectrum signals the appearance of a possible topotactic transformation of the crystal structure from that of the rhombohedral ABO 3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms. (paper)

  7. Temperature dependent rapid annealing effect induces amorphous aggregation of human serum albumin.

    Science.gov (United States)

    Ishtikhar, Mohd; Ali, Mohd Sajid; Atta, Ayman M; Al-Lohedan, Hammad; Badr, Gamal; Khan, Rizwan Hasan

    2016-01-01

    This study represents an analysis of the thermal aggregation of human serum albumin (HSA) induced by novel rosin modified compounds. The aggregation process causes conformational alterations in the secondary and tertiary structures of the proteins. The conversion of globular protein to amorphous aggregates was carried out by spectroscopic, calorimetric and microscopic techniques to investigate the factors that are responsible for the structural, conformational and morphological alteration in the protein. Our outcome results show that the aggregation of HSA was dependent on the hydrophobicity, charge and temperature, because the formation of amorphous aggregates occurs in the presence of a novel cationic rosin compound, quaternary amine of rosin diethylaminoethyl ester (QRMAE), at 40°C and pH 7.4 (but at 25°C on similar pH value, there was no evidence of aggregate formation). In addition, the parent compound of QRMAE, i.e., abietic acid, and other derivatives such as nonionic rosin compounds [(RMPEG-750) and (RMA-MPEG-750)] do not shows the aggregating property. This work provides precise and necessary information that aid in the understanding the effects of rosin derivative compounds on HSA. This study also restrains important information for athletes, health providers, pharmaceutical companies, industries, and soft drink-processing companies. Copyright © 2015 Elsevier B.V. All rights reserved.

  8. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    International Nuclear Information System (INIS)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D.; Pavesi, M.

    2014-01-01

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  9. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

    2014-06-23

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  10. Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

    Science.gov (United States)

    You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

    2013-06-28

    The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

  11. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-04-01

    The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  12. Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition

    International Nuclear Information System (INIS)

    David, C; Girardeau, T; Paumier, F; Eyidi, D; Guerin, P; Marteau, M; Lacroix, B; Papathanasiou, N; Tinkham, B P

    2011-01-01

    Zinc oxide (ZnO) thin films have attracted much attention in recent years due to progress in crystal growth for a large variety of technological applications including optoelectronics and transparent electrodes in solar cells. Boron (B)-doped ZnO thin films are deposited by low pressure chemical vapour deposition (LPCVD) on Si(100). These films exhibit a strong (002) texture with a pyramidal grain structure. The ZnO films were annealed after growth; the annealing temperature and the atmosphere appear to strongly impact the layer conductivity. This work will first present the modification of the physical properties (carrier concentration, mobility) extracted from the simulation of layer reflection in the infrared range. At low annealing temperatures the mobility increases slightly before decreasing drastically above a temperature close to 250 deg. C. The chemical and structural evolution (XPS, x-ray diffraction) of the films was also studied to identify the relationship between microstructural modifications and the variations observed in the film conductivity. An in situ XRD study during annealing has been performed under air and low pressure conditions. As observed for electrical properties, the microstructural modifications shift to higher temperatures for vacuum annealing.

  13. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni{sub 2}Si formation and the resulting barrier height changes

    Energy Technology Data Exchange (ETDEWEB)

    Tengeler, Sven, E-mail: stengeler@surface.tu-darmstadt.de [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Kaiser, Bernhard [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Chaussende, Didier [Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Jaegermann, Wolfram [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2017-04-01

    Highlights: • Schottky behavior (Φ{sub B} = 0.41 eV) and Fermi level pining were found pre annealing. • Ni{sub 2}Si formation was confirmed for 5 min at 850 °C. • 3C/Ni{sub 2}Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni{sub 2}Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni{sub 2}Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  14. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni_2Si formation and the resulting barrier height changes

    International Nuclear Information System (INIS)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-01-01

    Highlights: • Schottky behavior (Φ_B = 0.41 eV) and Fermi level pining were found pre annealing. • Ni_2Si formation was confirmed for 5 min at 850 °C. • 3C/Ni_2Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni_2Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni_2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  15. Yelavarthy Nayudamma: Scientist, Leader, and Mentor Extraordinary

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 19; Issue 10. Yelavarthy Nayudamma: Scientist, Leader, and Mentor Extraordinary. J Raghava Rao T Ramasami. General Article Volume 19 Issue 10 October 2014 pp 887-899 ...

  16. Substrate-induced phase of a [1]benzothieno[3,2-b]benzothiophene derivative and phase evolution by aging and solvent vapor annealing.

    Science.gov (United States)

    Jones, Andrew O F; Geerts, Yves H; Karpinska, Jolanta; Kennedy, Alan R; Resel, Roland; Röthel, Christian; Ruzié, Christian; Werzer, Oliver; Sferrazza, Michele

    2015-01-28

    Substrate-induced phases (SIPs) are polymorphic phases that are found in thin films of a material and are different from the single crystal or "bulk" structure of a material. In this work, we investigate the presence of a SIP in the family of [1]benzothieno[3,2-b]benzothiophene (BTBT) organic semiconductors and the effect of aging and solvent vapor annealing on the film structure. Through extensive X-ray structural investigations of spin coated films, we find a SIP with a significantly different structure to that found in single crystals of the same material forms; the SIP has a herringbone motif while single crystals display layered π-π stacking. Over time, the structure of the film is found to slowly convert to the single crystal structure. Solvent vapor annealing initiates the same structural evolution process but at a greatly increased rate, and near complete conversion can be achieved in a short period of time. As properties such as charge transport capability are determined by the molecular structure, this work highlights the importance of understanding and controlling the structure of organic semiconductor films and presents a simple method to control the film structure by solvent vapor annealing.

  17. Coercivity and induced magnetic anisotropy by stress and/or field annealing in Fe- and Co- based (Finemet-type) amorphous alloys

    International Nuclear Information System (INIS)

    Miguel, C.; Zhukov, A.; Val, J.J. del; Gonzalez, J.

    2005-01-01

    Uniaxial magnetic anisotropy has been induced in amorphous Fe 73.5 Cu 1 Nb 3 Si 15.5 B 7 (Fe-rich) and (Co 77 Si 13.5 B 9.5 ) 90 Fe 7 Nb 3 (Co-rich) ferromagnetic alloys by annealing under stress and/or magnetic field. Such anisotropy plays a crucial role on the magnetization process and, consequently, determine the future applications of these materials. The mechanisms involved on the origin of such induced magnetic anisotropy showed significant differences between Fe-rich and Co-rich amorphous alloys. This work provides a comparative study of the coercive field and induced magnetic anisotropy in Fe-rich and Co-rich (Finemet) amorphous alloys treated by stress and/or field

  18. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  19. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  20. An RGB approach to extraordinary spectra

    Science.gov (United States)

    Grusche, Sascha; Theilmann, Florian

    2015-09-01

    After Newton had explained a series of ordinary spectra and Goethe had pointed out its complementary counterpart, Nussbaumer discovered a series of extraordinary spectra which are geometrically identical and colourwise analogous to Newton’s and Goethe’s spectra. To understand the geometry and colours of extraordinary spectra, the wavelength composition is explored with filters and spectroscopic setups. Visualized in a dispersion diagram, the wavelength composition is interpreted in terms of additive colour mixing. Finally, all spectra are simulated as the superposition of red, green, and blue images that are shifted apart. This RGB approach makes it easy to understand the complex relationship between wavelengths and colours.

  1. Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

    Science.gov (United States)

    Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

    2009-06-01

    Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

  2. Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing

    International Nuclear Information System (INIS)

    Kahen, K.B.; Rajeswaran, G.; Lee, S.T.

    1988-01-01

    A mechanism for the transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post-implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity-enhanced diffusion remains a weak effect

  3. Extraordinary Readers: The Story of a Documentary

    Directory of Open Access Journals (Sweden)

    İsmail Arayıcı

    2013-11-01

    Full Text Available This article discusses the story behind the making of a documentary about the extraordinary patrons of public libraries located throughout Turkey. The documentary explored in this article was the result of collaboration between the Libraries of the Ministry of Culture and Tourism, the General Directorate of Libraries and Publications, and the Turkish Librarians' Association.

  4. Developing Concepts of Ordinary and Extraordinary Communication

    Science.gov (United States)

    Lane, Jonathan D.; Evans, E. Margaret; Brink, Kimberly A.; Wellman, Henry M.

    2016-01-01

    We examine how understandings of ordinary and extraordinary communication develop. Three- to 10-year-old children and adults (N = 183) were given scenarios in which a protagonist wanted help from a human (their parent) or from God. Scenarios varied in whether protagonists expressed their desires aloud (by asking) or silently (by hoping), whether…

  5. Nakula's Extraordinary Talent Mathematics From the Mahabharatha

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 2; Issue 1. Nakula's Extraordinary Talent Mathematics From the Mahabharatha. C Musili. General Article Volume 2 Issue 1 January 1997 pp 44-52. Fulltext. Click here to view fulltext PDF. Permanent link:

  6. Compositional and structural changes in TiB2 films induced by bias, in situ and post-deposition annealing, respectively

    International Nuclear Information System (INIS)

    Pelleg, Joshua; Sade, G.; Sinder, M.; Mogilyanski, D.

    2006-01-01

    Structural changes in TiB 2 films were induced at relatively low temperatures by the application of bias and in situ annealing or by post-deposition heat treatment of samples subjected to bias with simultaneous in situ annealing. In situ annealing by itself evoked only partial crystallization. Application of bias by itself only modified the composition of the as deposited film. A simple model is presented to explain the variation of the composition when RF bias is applied to a cold substrate. The crystallized films had a (0001) texture. A model has been suggested to explain the observed preferred orientation, based on the contribution of surface and strain energies. Both, the surface energy and strain energy are direction dependent. These were evaluated for two film orientations reported in the literature, namely, the (0001) and (101-bar 1)orientations. The preferred orientation of the film is determined by the lowest overall free energy resulting from the competition between the surface energy and the strain energy on different lattice planes. The surface energy is not film thickness dependent while the strain energy is thickness dependent and increases with it. For small film thickness, as in this work, the surface energy term is significant and (0001) orientation with a minimum surface energy is preferred. At large film thicknesses the strain energy becomes dominant and the (101-bar 1) preferred orientation is observed. Under certain experimental conditions strain energy effects may tip the preferred orientation to (101-bar 1). The elastic moduli in the (0001) and (101-bar 1) directions were determined as 435 and 538GPa, respectively

  7. Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    McCann, R.; Roy, S.S.; Papakonstantinou, P.; Bain, M.F.; Gamble, H.S.; McLaughlin, J.A.

    2005-01-01

    Tetrahedral amorphous carbon (ta-C) and nitrogenated tetrahedral amorphous carbon films (ta-CN x ), deposited by double bend off plane Filtered Vacuum Cathodic Arc were annealed up to 1000 deg. C in flowing argon for 2 min. Modifications on the chemical bonding structure of the rapidly annealed films, as a function of temperature, were investigated by NEXAFS, X-ray photoelectron and Raman spectroscopies. The interpretation of these spectra is discussed. The results demonstrate that the structure of undoped ta-C films prepared at floating potential with an arc current of 80 A remains stable up to 900 deg. C, whereas that of ta-CN x containing 12 at.% nitrogen is stable up to 700 deg. C. At higher temperatures, all the spectra indicated the predominant formation of graphitic carbon. Through NEXAFS studies, we clearly observed three π* resonance peaks at the ' N K edge structure. The origin of these three peaks is not well established in the literature. However our temperature-dependant study ascertained that the first peak originates from C=N bonds and the third peak originates from the incorporation of nitrogen into the graphite like domains

  8. Cascade annealing: an overview

    International Nuclear Information System (INIS)

    Doran, D.G.; Schiffgens, J.O.

    1976-04-01

    Concepts and an overview of radiation displacement damage modeling and annealing kinetics are presented. Short-term annealing methodology is described and results of annealing simulations performed on damage cascades generated using the Marlowe and Cascade programs are included. Observations concerning the inconsistencies and inadequacies of current methods are presented along with simulation of high energy cascades and simulation of longer-term annealing

  9. In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2015-12-15

    Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

  10. Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

    Science.gov (United States)

    Sun, Yijun; Cheng, Zhiyuan; Zhou, Qiang; Sun, Ying; Sun, Jiabao; Liu, Yanhua; Wang, Meifang; Cao, Zhen; Ye, Zhi; Xu, Mingsheng; Ding, Yong; Chen, Peng; Heuken, Michael; Egawa, Takashi

    2018-02-01

    The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

  11. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    International Nuclear Information System (INIS)

    Takimoto, Takuma; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

    2014-01-01

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

  12. Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

    1979-01-01

    This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

  13. Developing concepts of ordinary and extraordinary communication.

    Science.gov (United States)

    Lane, Jonathan D; Evans, E Margaret; Brink, Kimberly A; Wellman, Henry M

    2016-01-01

    We examine how understandings of ordinary and extraordinary communication develop. Three- to 10-year-old children and adults (N = 183) were given scenarios in which a protagonist wanted help from a human (their parent) or from God. Scenarios varied in whether protagonists expressed their desires aloud (by asking) or silently (by hoping), whether (for human scenarios) parents were nearby or far away, and whether (for God scenarios) protagonists expressed desires through ordinary means (asking or hoping) or more extraordinary means (praying). Following each scenario, participants were asked whether the recipient (either the parent or God) was aware of the protagonist's desire. Children as young as 3 to 4 years old understood that both loudness and distance limit the effectiveness of human communication, reporting that humans would most likely be aware of desires when they were expressed both aloud and nearby. As well, by this age children reported that God would more often be aware of desires than would humans, but children of all ages often reported that God (like humans) would be more aware of desires expressed aloud (rather than silently). These concepts of ordinary and extraordinary communication continued to be refined through middle childhood. Children's performance on standard theory-of-mind tasks and participants' religious background predicted whether they attributed awareness to God. (PsycINFO Database Record (c) 2015 APA, all rights reserved).

  14. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  15. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  16. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  17. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  18. Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

    Directory of Open Access Journals (Sweden)

    Jung Jin Park

    2016-05-01

    Full Text Available Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011 grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat =  λ∥ − λ⊥ of ∼280 ppm and ∼130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA. Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ∼60% to within ∼80% of λsat. The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ∼46% to ∼56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing

  19. Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

    Science.gov (United States)

    Park, Jung Jin; Na, Suok-Min; Raghunath, Ganesh; Flatau, Alison B.

    2016-05-01

    Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011) grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat = λ∥ - λ⊥) of ˜280 ppm and ˜130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA). Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ˜60% to within ˜80% of λsat). The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ˜46% to ˜56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing/energy harvesting

  20. Measurements of Effective Schottky Barrier in Inverse Extraordinary Optoconductance Structures

    Science.gov (United States)

    Tran, L. C.; Werner, F. M.; Solin, S. A.; Gilbertson, Adam; Cohen, L. F.

    2013-03-01

    Individually addressable optical sensors with dimensions as low as 250nm, fabricated from metal semiconductor hybrid structures (MSH) of AuTi-GaAs Schottky interfaces, display a transition from resistance decreasing with intensity in micron-scale sensors (Extraordinary Optoconductance, EOC) to resistance increasing with intensity in nano-scale sensors (Inverse Extraordinary Optoconductance I-EOC). I-EOC is attributed to a ballistic to diffusive crossover with the introduction of photo-induced carriers and gives rise to resistance changes of up to 9462% in 250nm devices. We characterize the photo-dependence of the effective Schottky barrier in EOC/I-EOC structures by the open circuit voltage and reverse bias resistance. Under illumination by a 5 mW, 632.8 nm HeNe laser, the barrier is negligible and the Ti-GaAs interface becomes Ohmic. Comparing the behavior of two devices, one with leads exposed, another with leads covered by an opaque epoxy, the variation in Voc with the position of the laser can be attributed to a photovoltaic effect of the lead metal and bulk GaAs. The resistance is unaffected by the photovoltaic offset of the leads, as indicated by the radial symmetry of 2-D resistance maps obtained by rastering a laser across EOC/IEOC devices. SAS has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

  1. Effects of implantation temperature and thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in a-SiC:H

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T., E-mail: tania_tsvetkova@yahoo.co.uk [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Wright, C.D. [University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Kitova, S. [Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 109 Acad. G. Bontchev St., 1113 Sofia (Bulgaria); Bischoff, L. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314 Dresden (Germany); Zuk, J. [Institute of Physics, Maria Curie-Sklodovska University, Pl. M.Curie-Sklodovskiej 1, 20-031 Lublin (Poland)

    2013-07-15

    The effects of implantation temperature and post-implantation thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in hydrogenated silicon–carbon alloy films have been studied. As a result of the implantation a well-expressed “darkening” effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5–3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga{sup +}-focused ion beam. Possible applications of this effect in the area of submicron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga{sup +} liquid metal ion sources. The fact that Ga has a very low melting point (T{sub m} = 29.8 °C) and an unusual feature of volume contraction on melting are factors which favour Ga incorporation upon ion-implantation as dispersed clusters, or small nanoparticles. It has been previously noted that Ga precipitation into nanoparticles can vary dramatically (in terms of particle size) with Ga concentration and small changes in surface implant temperature, thus affecting the optical properties of the target. The precise role of implantation temperature effects, i.e. the target temperature during Ga{sup +} ion irradiation, on the optical contrast obtainable, has been therefore a key part of this study. Appropriate post-implantation annealing treatments were also studied, since these are expected to offer further benefits in reducing the required ion dose and enhancing contrast, thus increasing the cost-effectiveness of the bit-writing method.

  2. Identification of differentially expressed genes induced by energy restriction using annealing control primer system from the liver and adipose tissues of broilers.

    Science.gov (United States)

    Wang, J W; Chen, W; Kang, X T; Huang, Y Q; Tian, Y D; Wang, Y B

    2012-04-01

    Female Arbor Acre broilers were divided into 2 groups at 18 d of age. One group of chickens had free access to feed (AL), and the other group of chickens had 30% energy restriction (ER). Adipose and hepatic RNA samples were collected at 48 d of age. We employed an accurate reverse-transcription (RT) PCR method that involves annealing control primers to identify the differentially expressed genes (DEG) between ER and AL groups. Using 20 annealing control primers, 43 differentially expressed bands (40 downregulated and 3 upregulated in the ER group) were detected from the hepatic tissue, whereas no differentially expressed bands were detected from the adipose tissue. It seems that energy restriction could induce more DEG in hepatic tissue than that in adipose tissue and could result in more gene-expression downregulation in hepatic tissue. Eight DEG (6 known and 2 unknown genes) were gained from hepatic tissue and confirmed by RT-PCR, which were all supported by released expressed sequence tag sequences. Their expressions were all downregulated by energy restriction in hepatic tissues. Six known genes are RPL7, RPLP1, FBXL12, ND1, ANTXR2, and SLC22A18, respectively, which seem to play essential roles in the protein translation, energy metabolism, and tumor inhibition. The alterations of gene expression in 3 selected genes, including ND1 (P < 0.01), FBXL12 (P < 0.01), and RPLP1 (P < 0.05), were supported by real-time quantitative RT-PCR reaction. Our data provide new insights on the metabolic state of broilers changed by energy restriction.

  3. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  4. Extraordinary acoustic transmission through annuluses in air and its applications in acoustic beam splitter and concentrator

    International Nuclear Information System (INIS)

    Ge, Yong; Liu, Shu-sen; Yuan, Shou-qi; Xia, Jian-ping; Guan, Yi-jun; Sun, Hong-xiang; Zhang, Shu-yi

    2016-01-01

    We report an extraordinary acoustic transmission through two layer annuluses made of metal cylinders in air both numerically and experimentally. The effect arises from the enhancement and reconstruction of the incident source induced by different Mie-resonance modes of the annuluses. The proposed system takes advantages of the consistency in the waveform between the input and output waves, the high amplitude amplification of output waves, and the easy adjustment of structure. More interestingly, we investigate the applications of the extraordinary acoustic transmission in the acoustic beam splitter and acoustic concentrator. Our finding should have an impact on ultrasonic applications.

  5. Vacuum-annealing induced enhancements in the transparent conducting properties of Mo  +  F doped ZnO thin films

    Science.gov (United States)

    Dineshbabu, N.; Ravichandran, K.

    2017-09-01

    The decisive aim of the present study is to enhance the transparent conducting properties of Mo  +  F co-doped ZnO films through annealing. In this work, Mo  +  F co-doped ZnO (MFZO) films were deposited on glass substrates at a deposition temperature of 350 °C using a home-made nebulizer spray pyrolysis technique and the prepared samples were annealed under air and vacuum atmosphere at 400 °C for 2 h. The structural, electrical, optical, surface morphological and elemental properties of as-deposited, air-annealed and vacuum-annealed samples were compared using various analytical techniques. The vacuum-annealed sample shows lowest resistivity of 1.364  ×  10-3 Ω cm and high transmittance of 90% in the visible region with high ohmic conducting nature. The optical bandgap of the sample was found to be increased to 3.36 eV after vacuum annealing treatment. The XRD patterns of the films confirmed the polycrystalline nature. The PL measurements show the defect levels of the deposited films. The FESEM and AFM studies show an increase in the grain size and roughness of the films, respectively, after vacuum-annealing treatment. The presence of the elements before and after annealing treatment was confirmed using XPS analysis.

  6. Heating tokamaks by parametric decay of intense extraordinary mode radiation

    International Nuclear Information System (INIS)

    Elder, G.B.; Perkins, F.W.

    1979-08-01

    Intense electron beam technology has developed coherent, very high power (350 megawatts) microwave sources at frequencies which are a modest fraction of the electron cyclotron frequency in tokamaks. Propagation into a plasma occurs via the extraordinary mode which is subject to parametric decay instabilities in the density range ω/sub o/ 2 2 < ω/sub o/(ω/sub o/ + Ω/sub e/). For an incident wave focused onto a hot spot by a dish antenna of radius rho, the effective threshold power P/sub o/ required to induced effective parametric heating is P/sub o/ approx. = 10 MW x/rho Ω/sub e//ω/sub o/ (T/sub e//1 keV)/sup 3/2/ where x denotes the distance to the hot spot

  7. Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Tiancheng; Lu, Ming; Yang, Kui; Xiao, Pengfei; Wang, Rong, E-mail: wangr@bnu.edu.cn

    2014-09-15

    Direct injection-enhanced annealing of defects in a GaInP top cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.8 MeV electrons with a fluence of 1 × 10{sup 15} cm{sup −2} has been observed and analyzed using electroluminescence (EL) spectra. Minority-carrier injection under forward bias conditions is observed to enhance defect annealing in the GaInP top cell, and recovery of the EL intensity of the GaInP top cell was observed even at room temperature. Moreover, the injection-enhanced defect annealing rates obey a simple Arrhenius law; therefore, the annealing activation energy was determined and is equal to 0.51 eV. Lastly, the H2 defect has been identified as the primary non-radiative recombination center based on a comparison of the annealing activation energies.

  8. Calorimetric features of release of plastic deformation induced internal stresses, and approach to equilibrium state on annealing of crystals and glasses

    Energy Technology Data Exchange (ETDEWEB)

    Johari, G.P., E-mail: joharig@mcmaster.ca

    2014-04-01

    Highlights: • Stress release in a glass occurs at a faster rate than structural relaxation. • Plastically-deformed glass would show two exothermic minima, and no glass transition. • Enthalpy matching procedure would yield an inaccurate fictive temperature. • Complex heat capacity may distinguish plastically-deformed from quench-formed glass. - Abstract: Plastic deformation of crystals and glasses produces internal strains (stresses), which change their energy and other thermodynamic properties. On annealing, these stresses decrease at a rate faster than the structure relaxes toward the equilibrium state. Mechanism of such relaxations in crystals differs from that in glasses and it also differs for glasses of different types. In all cases, the energy related properties decrease with time isothermally and on heating, resembling the structure relaxation of a stress-free glass. We consider these features and argue that kinetics of enthalpy loss with time yields the rate constants of the stress release and of the structure change, and not the viscosity determining α-relaxation time. Since thermal cycling does not recover the enthalpy from internal stresses, a glass with stresses has neither a glass-softening temperature, T{sub g}, nor a fictive temperature, T{sub f}. Plastic deformation would not rejuvenate a physically aged glass to the properties of its un-aged state. The Prigogine–Defay ratio can be extended to all T{sub f}s, and used to investigate the effect of distribution of relaxation times on its value, but it can not be defined for an internally stressed glass. After discussing the effects of annealing on the heat capacity and DSC scans, we conclude that on slow heating, glass with deformation-induced stresses would show two exothermic minima, and normal glass would show only one such minimum. Temperature-modulated scanning calorimetry would also distinguish an internally stressed glass from an equally high-enthalpy, stress-free glass. Enthalpy

  9. Magnetic properties and magnetoimpedance of FeCoNi/CuBe electroplated tubes with different features of field-annealing induced magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    El Kammouni, R.; Chlenova, A.A.; Volchkov, S.O. [Ural Federal University, Laboratory of Magnetic Sensors, Lenin Ave. 51, 620000 Ekaterinburg (Russian Federation); Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Ural Federal University, Laboratory of Magnetic Sensors, Lenin Ave. 51, 620000 Ekaterinburg (Russian Federation); Departamento de Electricidad y Electrónica, Universidad del País Vasco BCMaterials (UPV/EHU), 48940 Leioa (Spain)

    2017-02-01

    The effect of field annealing (in direct (DC) or alternating current (AC) field) on the structure, magnetic properties and giant magnetoimpedance (GMI) of CuBe/ Fe{sub 19}Co{sub 17}Ni{sub 64} electroplated tubes was studied. The field and frequency dependences of total impedance and its real part were comparatively analyzed together with magnetization processes features. The GMI sensitivity with respect to an applied field was the subject of special attention in view of possible applications of these materials in small magnetic field sensors. The maximum GMI ratio depends strongly on the heat treatments. The DC field annealing leads to the highest total impedance GMI ratio (ΔZ/Z=250%) and real part of the total impedance GMI ratio (ΔR/R=640%), compared to as-cast and AC field annealed samples. The external field response of DC annealed samples presented a single peak GMI response as a consequence of a strong contribution of the longitudinal effective anisotropy. At the same time, the maximum obtained sensitivity of 13.5%/Oe for DC case is much lower compared to the highest sensitivity values obtained for as-prepared (28.6%/Oe) and DC field annealed (22.0%/Oe) tubes for the low frequency of 2.5 MHz. The weak dependence of ΔZ/Z ratio in the case of AC field annealed samples in the high frequency range is an important advantage for particular sensor applications. - Highlights: • CuBe/FeCoNi tubes were fabricated by electroplating. • The effect of field annealing on the structure, magnetic properties and magnetoimpedance was studied. • The maximum magnetoimpedance ( MI) ratio depends strongly on the heat treatments. • The DC field annealing leads to the highest total impedance MI ratio. • Transformation from one- to two-peaks MI curves was observed in the DC field annealed tubes.

  10. Taking the Extra out of the Extraordinary

    DEFF Research Database (Denmark)

    Jerslev, Anne; Mortensen, Mette

    2014-01-01

    people engaged in insignificant everyday activities hold by far the largest share of today’s insatiable digital, globalized and commercialized market for news pictures of celebrities off-duty. Re-examining the well-known theorization of the tension between the ordinary and extraordinary in celebrity......Paparazzi photography presently constitutes the largest genre of visual celebrity news on the internet along with red carpet photography. With the emergence of digital media, this genre has moved towards the centre of mainstream news and entertainment culture, and the content has undergone...... culture studies, this article thus investigates the following research question: How is the ordinary represented in paparazzi photographs as a genre of visual celebrity news in the current, digital media landscape?...

  11. Nonlinear extraordinary wave in dense plasma

    Energy Technology Data Exchange (ETDEWEB)

    Krasovitskiy, V. B., E-mail: krasovit@mail.ru [Russian Academy of Sciences, Keldysh Institute of Applied Mathematics (Russian Federation); Turikov, V. A. [Russian University of Peoples’ Friendship (Russian Federation)

    2013-10-15

    Conditions for the propagation of a slow extraordinary wave in dense magnetized plasma are found. A solution to the set of relativistic hydrodynamic equations and Maxwell’s equations under the plasma resonance conditions, when the phase velocity of the nonlinear wave is equal to the speed of light, is obtained. The deviation of the wave frequency from the resonance frequency is accompanied by nonlinear longitudinal-transverse oscillations. It is shown that, in this case, the solution to the set of self-consistent equations obtained by averaging the initial equations over the period of high-frequency oscillations has the form of an envelope soliton. The possibility of excitation of a nonlinear wave in plasma by an external electromagnetic pulse is confirmed by numerical simulations.

  12. Modeling the planar configuration of extraordinary magnetoresistance

    International Nuclear Information System (INIS)

    El-Ahmar, S; Pozniak, A A

    2015-01-01

    Recently the planar version of the extraordinary magnetoresistance (EMR) magnetic field sensor has been constructed and verified in practice. Planar configuration of the EMR device gives many technological advantages, it is simpler than the classic and allows one to build the sensor using electric materials of the new type (such as graphene or topological insulators) much easier. In this work the planar configuration of the EMR sensor is investigated by performing computational simulations using the finite element method (FEM). The computational comparison of the planar and classic configurations of EMR is presented using three-dimensional models. Various variants of the geometry of EMR sensor components are pondered and compared in the planar and classic version. Size of the metal overlap is considered for sensor optimization as well as various semiconductor-metal contact resistance dependences of the EMR signal. Based on computational simulations, a method for optimal placement of electric terminals in a planar EMR device is proposed. (paper)

  13. The making of extraordinary psychological phenomena.

    Science.gov (United States)

    Lamont, Peter

    2012-01-01

    This article considers the extraordinary phenomena that have been central to unorthodox areas of psychological knowledge. It shows how even the agreed facts relating to mesmerism, spiritualism, psychical research, and parapsychology have been framed as evidence both for and against the reality of the phenomena. It argues that these disputes can be seen as a means through which beliefs have been formulated and maintained in the face of potentially challenging evidence. It also shows how these disputes appealed to different forms of expertise, and that both sides appealed to belief in various ways as part of the ongoing dispute about both the facts and expertise. Finally, it shows how, when a formal Psychology of paranormal belief emerged in the twentieth century, it took two different forms, each reflecting one side of the ongoing dispute about the reality of the phenomena. © 2012 Wiley Periodicals, Inc.

  14. SFM study of ion-induced hillocks on LiF exposed to thermal and optical annealing

    International Nuclear Information System (INIS)

    Mueller, C.; Benyagoub, A.; Lang, M.; Neumann, R.; Schwartz, K.; Toulemonde, M.; Trautmann, C.

    2003-01-01

    Single crystals of LiF were irradiated at 10 different temperatures from room temperature to 780 K with Pb ions of 4.1 MeV/u. The irradiated surfaces were analyzed with scanning force microscopy, which revealed ion-induced hillocks with diameters of ∼20 nm and with heights of a few nm. Above 450 K, the number of hillocks strongly decreased with irradiation temperature. No hillocks were created under irradiation at 780 K. In addition, LiF samples irradiated at room temperature with Ni (2.5 MeV/u) and U ions (11.1 MeV/u) were bleached with UV-light on part of the crystal surface. In the bleached area, the characteristic F- and F 2 -centers disappeared, whereas the mean diameter and height of the hillocks did not show any significant change

  15. Irradiation embrittlement and optimisation of annealing

    International Nuclear Information System (INIS)

    1993-01-01

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

  16. Irradiation embrittlement and optimisation of annealing

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-31

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects.

  17. Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: Defect transformation (H4-E11)→H4'

    International Nuclear Information System (INIS)

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.

    1990-01-01

    Capacitance spectroscopy has been used to study the two dominant deep levels, H 4 and E 11 , produced in InP by low-energy electron irradiation. The annealing rates of H 4 and E 11 in the p-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap H 4 ' , which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of H 4 and E 11 shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the H 4 ' center

  18. Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

    International Nuclear Information System (INIS)

    Gu, Wen; Wu, Xingyang; Song, Peng; Zhang, Jianhua

    2015-01-01

    Highlights: • The electrical properties of GZO/CuS x contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu x S interlayers under different annealing temperatures. It is shown that the GZO/Cu x S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10 −2 Ω cm 2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu x S/p-GaN and Cu x S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

  19. 22 CFR 41.55 - Aliens with extraordinary ability.

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens with extraordinary ability. 41.55... IMMIGRATION AND NATIONALITY ACT, AS AMENDED Business and Media Visas § 41.55 Aliens with extraordinary ability. (a) Requirements for O classification. An alien shall be classifiable under the provisions of INA 101...

  20. Nonlinear propagation of the extraordinary mode in a hot magnetoplasma

    International Nuclear Information System (INIS)

    Khiet, Tu; Furutani, Y.; Ichikawa, Y.H.

    1978-07-01

    Kinetic theory for a nonlinear propagation of quasi-monochromatic extraordinary waves is presented. It reveals that propagation of an envelope of the extraordinary carriers is described by the nonlinear Schroedinger equation. In a cold plasma limit, a detailed analysis is carried out on a behaviour of the envelope of the upper- and the lower-hybrid waves at respective resonant frequency ranges. (author)

  1. 7 CFR 1773.41 - Extraordinary retirement losses.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 12 2010-01-01 2010-01-01 false Extraordinary retirement losses. 1773.41 Section 1773... Documentation § 1773.41 Extraordinary retirement losses. The CPA's workpapers must contain an analysis of retirement losses, including any required approval by a regulatory commission with jurisdiction in the matter...

  2. Extraordinary Rendition and U.S. Counterterrorism Policy

    Directory of Open Access Journals (Sweden)

    Mark J. Murray

    2011-01-01

    Full Text Available This article examines the United States Government policy of extraordinary rendition as a response to terrorism. The paper provides a working definition of the term, outlines why it has become controversial, and uses case studies to examine success and failures of extraordinary rendition in practice. The paper concludes with lessons learned—more specifically, policy amendments—that are necessary to keep extraordinary rendition as a viable tool for the Obama Administration and mitigate political fallout against the United States from both its allies and enemies. This paper argues that extraordinary rendition provides flexibility to policymakers to detain terrorists in cases where an attack may be forthcoming and when other approved legal processes are slow to react. Therefore, instead of ending extraordinary renditions altogether, the United States should reevaluate how it implements the policy on a tactical, operational, and strategic level and amend it based on the recommendations put forward in this article.

  3. Extraordinary Matter: Visualizing Space Plasmas and Particles

    Science.gov (United States)

    Barbier, S. B.; Bartolone, L.; Christian, E.; Thieman, J.; Eastman, T.; Lewis, E.

    2011-09-01

    Atoms and sub-atomic particles play a crucial role in the dynamics of our universe, but these particles and the space plasmas comprised of them are often overlooked in popular scientific and educational resources. Although the concepts are pertinent to a wide range of topics, even the most basic particle and plasma physics principles are generally unfamiliar to non-scientists. Educators and public communicators need assistance in explaining these concepts that cannot be easily demonstrated in the everyday world. Active visuals are a highly effective aid to understanding, but resources of this type are currently few in number and difficult to find, and most do not provide suitable context for audience comprehension. To address this need, our team is developing an online multimedia reference library of animations, visualizations, interactivities, and videos resources - Extraordinary Matter: Visualizing Space Plasmas and Particles. The site targets grades 9-14 and the equivalent in informal education and public outreach. Each ready-to-use product will be accompanied by a supporting explanation at a reading level matching the educational level of the concept. It will also have information on relevant science, technology, engineering, and mathematics (STEM) educational standards, activities, lesson plans, related products, links, and suggested uses. These products are intended to stand alone, making them adaptable to the widest range of uses, including scientist presentations, museum displays, educational websites and CDs, teacher professional development, and classroom use. This project is funded by a NASA Education and Public Outreach in Earth and Space Science (EPOESS) grant.

  4. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S. [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-12-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.

  5. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    Science.gov (United States)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

    2011-12-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 °C. Post-growth annealing in air was carried out up to a temperature of 1000 °C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 °C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 × 1017 cm-3 at the annealing temperature of 600 °C. The origin of the p-type conductivity was consistent with the AsZn(VZn)2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the AsZn(VZn)2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

  6. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

    2011-01-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10 17 cm -3 at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As Zn (V Zn ) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn (V Zn ) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

  7. Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure.

    Science.gov (United States)

    Ishikawa, Fumitaro; Higashi, Kotaro; Fuyuno, Satoshi; Morifuji, Masato; Kondow, Masahiko; Trampert, Achim

    2018-04-13

    We study the effects of annealing on (Ga 0.64 ,In 0.36 ) (N 0.045 ,As 0.955 ) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.

  8. Defect induced ferromagnetism in MgO and its exceptional enhancement upon thermal annealing: a case of transformation of various defect states.

    Science.gov (United States)

    Pathak, Nimai; Gupta, Santosh Kumar; Prajapat, C L; Sharma, S K; Ghosh, P S; Kanrar, Buddhadev; Pujari, P K; Kadam, R M

    2017-05-17

    MgO particles of few micron size are synthesized through a sol-gel method at different annealing temperatures such as 600 °C (MgO-600), 800 °C (MgO-800) and 1000 °C (MgO-1000). EDX and ICP-AES studies confirmed a near total purity of the sample with respect to paramagnetic metal ion impurities. Magnetic measurements showed a low temperature weak ferromagnetic ordering with a T C (Curie temperature) around 65 K (±5 K). Unexpectedly, the saturation magnetization (M s ) was found to be increased with increasing annealing temperature during synthesis. It was observed that with J = 1 or 3/2 or S = 1 or 3/2, the experimental points are fitted well with the Brillouin function of weak ferromagnetic ordering. A positron annihilation lifetime measurement study indicated the presence of a divacancy (2V Mg + 2V O ) cluster in the case of the low temperature annealed compound, which underwent dissociations into isolated monovacancies of Mg and O at higher annealing temperatures. An EPR study showed that both singly charged Mg vacancies and oxygen vacancies are responsible for ferromagnetic ordering. It also showed that at lower annealing temperatures the contribution from was very low while at higher annealing temperatures, it increased significantly. A PL study showed that most of the F + centers were present in their dimer form, i.e. as centers. DFT calculation implied that this dimer form has a higher magnetic moment than the monomer. After a careful consideration of all these observations, which have been reported for the first time, this thermally tunable unusual magnetism phenomenon was attributed to a transformation mechanism of one kind of cluster vacancy to another.

  9. Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiOx/ZrO2 system containing Si nanoclusters

    International Nuclear Information System (INIS)

    Ershov, A. V.; Tetelbaum, D. I.; Chugrov, I. A.; Mashin, A. I.; Mikhaylov, A. N.; Nezhdanov, A. V.; Ershov, A. A.; Karabanova, I. A.

    2011-01-01

    The photoluminescence, infrared absorption, and Raman spectra of amorphous multilayered nanoperiodic a-SiO x /ZrO 2 structures produced by vacuum evaporation and then annealed at different temperatures (500–1100°C) are studied. It is established that the evolution of the optical properties with increasing annealing temperature is controlled by sequential transformation of Si clusters formed in the SiO x layers from nonphase inclusions to amorphous clusters and then to nanocrystals. The finally formed nanocrystals are limited in sizes by the thickness of the initial SiO x layers and by chemical reactions with ZrO 2 .

  10. Hydration-annealing of chemical radiation damage in calcium nitrate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; James, C.

    1984-01-01

    The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

  11. Infrared thermal annealing device

    International Nuclear Information System (INIS)

    Gladys, M.J.; Clarke, I.; O'Connor, D.J.

    2003-01-01

    A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

  12. Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance

    Science.gov (United States)

    Tran, Lauren Christine

    The Extraordinary Electroconductance (EEC) sensor has been previously demonstrated to have an electric field sensitivity of 3.05V/cm in a mesoscopic-scale structure fabricated at the center of a parallel plate capacitor. In this thesis, we demonstrate the first successful application of EEC sensors as electrochemical detectors of protein binding and biological molecule concentration. Using the avidin derivative, captavidin, in complex with the vitamin biotin, the change in four-point measured resistance with fluid protein concentration of bare EEC sensors was shown to increase by a factor of four in the presence of biomolecular binding as compared to baseline. Calculations for approximate field strengths introduced by a bound captavidin molecule are also presented. The development of Inverse-Extraordinary Optoconductance (I-EOC), an effect which occurs in nanoscale sensors, is also discussed. In the I-EOC effect, electron transport transitions from ballistic to diffusive with increasing light intensity. In these novel, room temperature optical detectors, the resistance is low at low light intensity and resistance increases by 9462% in a 250nm device mesa upon full illumination with a 5 mW HeNe laser. This is the inverse of bulk and mesoscopic device behavior, in which resistance decreases with increasing photon density.

  13. Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Xiang, N.

    2007-01-01

    The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 degree sign C results in a texture that consists of (100)Al[010](parallel sign)(100)GaAs[011] and (100)Al[010](parallel sign)(100)GaAs[010] rotated 45 degree sign with respect to each other, while the growth at 300 degree sign C leads to a mixture phase of (100)Al[010](parallel sign)(100)GaAs[011] and (110)Al[001](parallel sign)(100)GaAs[011]. In situ annealing of the Al film grown at 300 degree sign C causes a reorientation of the crystalline from (100)Al[010](parallel sign)(100)GaAs[011] to (110)Al[001](parallel sign)(100)GaAs[011]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence

  14. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.; Kosel, Jü rgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a

  15. Visualizing Space Plasmas and Particles: Extraordinary Matter

    Science.gov (United States)

    Barbier, B.; Bartolone, L. M.; Christian, E. R.; Eastman, T. E.; Lewis, E.; Thieman, J. R.

    2010-12-01

    A recent survey of museum visitors documented some startling misconceptions at a very basic level. Even in this "science attentive" group, one quarter of the respondents believed that an atom would explode if it lost an electron, one sixth said it would become a new atom or element, and one fifth said they had no idea what would happen. Only one fourth of the respondents indicated they were familiar with plasma as a state of matter. Current resources on these topics are few in number and/or are difficult to locate, and they rarely provide suitable context at a level understandable to high school students and educators or to the interested public. In response to this and other evidence of common misunderstandings of simple particle and plasma science, our team of space scientists and education specialists has embarked upon the development of "Extraordinary Matter: Visualizing Space Plasmas and Particles", an online NASA multimedia library. It is designed to assist formal and informal educators and scientists with explaining concepts that cannot be easily demonstrated in the everyday world. The newly released site, with a target audience equivalent to grades 9-14, includes both existing products, reviewed by our team for quality, and new products we have developed. Addition of products to our site is in large part determined by the results of our front-end evaluation to determine the specific needs, gaps, and priorities of potential audiences. Each ready-to-use product is accompanied by a supporting explanation at a reading level matching the educational level of the concept, along with educational standards addressed, and links to other associated resources. Some will include related educational activities. Products are intended to stand alone, making them adaptable to the widest range of uses, either individually or as a custom-selected group. Uses may include, for example, scientist presentations, museum displays, teacher professional development, and classroom

  16. Anomalous Faraday effect of a system with extraordinary optical transmittance.

    Science.gov (United States)

    Khanikaev, Alexander B; Baryshev, Alexander V; Fedyanin, Andrey A; Granovsky, Alexander B; Inoue, Mitsuteru

    2007-05-28

    It is shown theoretically that the Faraday rotation becomes anomalously large and exhibits extraordinary behavior near the frequencies of the extraordinary optical transmittance through optically thick perforated metal film with holes filled with a magneto-optically active material. This phenomenon is explained as result of strong confinement of the evanescent electromagnetic field within magnetic material, which occurs due to excitation of the coupled plasmon-polaritons on the opposite surfaces of the film.

  17. Thermal annealing of high dose radiation induced damage at room temperature in alkaline. Stored energy, thermoluminescence and coloration; Aniquilacion termica de dano inducido por irradiacion a altas dosis en haluros alcalinos a 300 k. energia almacenda. Termoluminiscencia y coloracion

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, L

    1980-07-01

    The possible relation between stored energy, thermoluminescence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminescence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KC1 samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose.Capacity of alkali halides to store energy by irradiation increases as the cation size decreases. (Author) 51 refs.

  18. The Multi-Functional Foot in Athletic Movement: Extraordinary Feats by Our Extraordinary Feet

    Directory of Open Access Journals (Sweden)

    Wilson Jennifer

    2016-03-01

    Full Text Available The unique architecture of the foot system provides a sensitive, multi-tensional method of communicating with the surrounding environment. Within the premise of the paper, we discuss three themes: complexity, degeneracy and bio-tensegrity. Complex structures within the foot allow the human movement system to negotiate strategies for dynamic movement during athletic endeavours. We discuss such complex structures with particular attention to properties of a bio-tensegrity system. Degeneracy within the foot structure offers a distinctive solution to the problems posed by differing terrains and uneven surfaces allowing lower extremity structures to overcome perturbation as and when it occurs. This extraordinary structure offers a significant contribution to bipedalism through presenting a robust base of support and as such, should be given more consideration when designing athletic development programmes.

  19. Quasi physisorptive two dimensional tungsten oxide nanosheets with extraordinary sensitivity and selectivity to NO2.

    Science.gov (United States)

    Khan, Hareem; Zavabeti, Ali; Wang, Yichao; Harrison, Christopher J; Carey, Benjamin J; Mohiuddin, Md; Chrimes, Adam F; De Castro, Isabela Alves; Zhang, Bao Yue; Sabri, Ylias M; Bhargava, Suresh K; Ou, Jian Zhen; Daeneke, Torben; Russo, Salvy P; Li, Yongxiang; Kalantar-Zadeh, Kourosh

    2017-12-14

    Attributing to their distinct thickness and surface dependent physicochemical properties, two dimensional (2D) nanostructures have become an area of increasing interest for interfacial interactions. Effectively, properties such as high surface-to-volume ratio, modulated surface activities and increased control of oxygen vacancies make these types of materials particularly suitable for gas-sensing applications. This work reports a facile wet-chemical synthesis of 2D tungsten oxide nanosheets by sonication of tungsten particles in an acidic environment and thermal annealing thereafter. The resultant product of large nanosheets with intrinsic substoichiometric properties is shown to be highly sensitive and selective to nitrogen dioxide (NO 2 ) gas, which is a major pollutant. The strong synergy between polar NO 2 molecules and tungsten oxide surface and also abundance of active surface sites on the nanosheets for molecule interactions contribute to the exceptionally sensitive and selective response. An extraordinary response factor of ∼30 is demonstrated to ultralow 40 parts per billion (ppb) NO 2 at a relatively low operating temperature of 150 °C, within the physisorption temperature band for tungsten oxide. Selectivity to NO 2 is demonstrated and the theory behind it is discussed. The structural, morphological and compositional characteristics of the synthesised and annealed materials are extensively characterised and electronic band structures are proposed. The demonstrated 2D tungsten oxide based sensing device holds the greatest promise for producing future commercial low-cost, sensitive and selective NO 2 gas sensors.

  20. Effect of radiation induced defects and incompatibility elastic stresses on the diffusion of ion implantated boron in silicon at the pulse annealing

    International Nuclear Information System (INIS)

    Stel'makh, V.F.; Suprun-Belevich, Yu.R.; Chelyadinskij, A.R.

    1987-01-01

    For determination of radiation defects effect on diffusion of the implanted boron in silicon at the pulse annealing, silicon crystals, implanted with boron, preliminary irradiated by silicon ions of different flows for checked defects implantation, were investigated. Silicon crystals additionally implanted by Ge + ions were investigated to research the effect of the incompatibility elastic stresses, emerging in implanted structures due to lattice periods noncoincidence in matrix and alloyed layers, on implanted boron diffusion. It is shown, that abnormally high values of boron diffusion coefficients in silicon at the pulse annealing are explained by silicon interstitial atom participation in redistribution of diffusing boron atoms by two diffusion channels - interstitial and vacation - and by incompatibility elastic stresses effect on diffusion

  1. Influence of thermal annealing-induced molecular aggregation on film properties and photovoltaic performance of bulk heterojunction solar cells based on a squaraine dye

    Science.gov (United States)

    Zhang, Pengpeng; Ling, Zhitian; Chen, Guo; Wei, Bin

    2018-04-01

    Squaraine (SQ) dyes have been considered as efficient photoactive materials for organic solar cells. In this work, we purposely controlled the molecular aggregation of an SQ dye, 2,4-bis[4-(N,N-dibutylamino)-2-dihydroxyphenyl] SQ (DBSQ-(OH)2) in the DBSQ(OH)2:[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend film by using the thermal annealing method, to study the influence of the molecular aggregation on film properties as well as the photovoltaic performance of DBSQ(OH)2:PCBM-based bulk heterojunction (BHJ) solar cells. Our results demonstrate that thermal annealing may change the aggregation behavior of DBSQ(OH)2 in the DBSQ(OH)2:PCBM film, and thus significantly influence the surface morphology, optical and electrical properties of the blend film, as well as the photovoltaic performance of DBSQ(OH)2:PCBM BHJ cells.

  2. Raman scattering in La1-xSrxFeO3-δ thin films: annealing-induced reduction and phase transformation

    Science.gov (United States)

    Islam, Mohammad A.; Xie, Yujun; Scafetta, Mark D.; May, Steven J.; Spanier, Jonathan E.

    2015-04-01

    Raman scattering in thin film La0.2Sr0.8FeO3-δ on MgO(0 0 1) collected at 300 K after different stages of annealing at selected temperatures T (300 K topotactic transformation of the crystal structure from that of the rhombohedral ABO3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms.

  3. Stress and annealing induced changes in the Curie temperature of amorphous and nanocrystalline FeZr and FeNb based alloys

    International Nuclear Information System (INIS)

    Gorria, P.; Orue, I.; Fernandez-Gubieda, M.L.; Plazaola, F.; Zabala, N.; Barandiaran, J.M.

    1996-01-01

    The stress and annealing dependence of the Curie temperature in FeZrBCu alloys is presented. A change of about 50 /GPa has been observed. The change in amorphous matrix composition upon crystallization produces an expected increase in T C (about 200 C) which is similar to the experimentally observed increase. This behaviour is opposite to that observed in Fe-Nb based alloys. (orig.)

  4. Annealing study of main electron irradiation-induced defects (H4 and H5) in P-In P using DLTS technique

    International Nuclear Information System (INIS)

    Massarani, B.; Awad, F.; Kaaka, M.

    1992-12-01

    Thermal annealing of the two hole traps H 4 and H 5 in room-temperature electron-irradiated In P Schottky diodes was investigated. Electron-irradiation energy ranging between 0.15 and 1.5 MeV with doses ranging between 5 x 10 14 and 10 16 e/cm 2 . DLTS technique with double-phase detector was used in this study. Contrary to what is generally admitted, we found that H 5 anneals out at about 150 C o with an activation energy of 1 eV. We have shown that H 4 is a complex defect having two components that we could resolve. While the first one, having lower emission cross section and higher capture cross section with ΔE = 0.37 eV anneals out at about 110 C o . The other component, with ΔE = 0.50 eV is thermally stable even above 170 C o . (author). 13 refs., 17 figs., 2 tabs

  5. Raman Scattering in La0.2Sr0.8FeO3-δ thin film: annealing-induced reduction and phase transformation

    Science.gov (United States)

    Islam, Mohammad; Xie, Yujun; Scafetta, Mark; May, Steven; Spanier, Jonathan

    2015-03-01

    Raman scattering in thin film La0.2Sr0.8FeO3-δ on MgO(001) collected at 300 K following different stages of annealing at selected temperatures (300 K topotactic transformation of the crystal structure from that of the rhombohedral ABO3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms. We acknowledge the ONR (N00014-11-1-0664), the Drexel Centralized Research Facilities, the Army Research Office DURIP program, the Department of Education (GAANN-RETAIN, Award No. P200A100117), and Leszek Wielunski at Rutgers University.

  6. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  7. InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method

    Science.gov (United States)

    Xue, Junjun; Cai, Qing; Zhang, Baohua; Ge, Mei; Chen, Dunjun; Zheng, Jianguo; Zhi, Ting; Tao, Zhikuo; Chen, Jiangwei; Wang, Lianhui; Zhang, Rong; Zheng, Youdou

    2017-11-01

    Incubation and shape transition are considered as two essential processes for nucleating of self-assembly InGaN nanocolumns (NCs) in traditional way. We propose a new approach for nuclei forming directly by in-situ annealing and ion irradiating the InGaN template during growing process. The nanoislands, considered as the nuclei of NCs, were formed by a combinational effect of thermal and ion etching (TIE), which made the gaps of the V-pits deeper and wider. On account of the decomposition of InGaN during TIE process, more nitride-rich amorphous alloys would intent to accumulate in the corroded V-pits. The amorphous alloys played a key role to promote the following growth from 2D regime into Volmer-Weber growth regime so that the NC morphology took place, rather than a compact film. As growth continued, the subsequently epitaxial InGaN alloys on the annealed NC nuclei were suffered in biaxial compressive stress for losing part of indium content from the NC nuclei during the TIE process. Strain relaxation, accompanied by thread dislocations, came up and made the lattice planes misoriented, which prevented the NCs from coalescence into a compact film at later period of growing.

  8. 18 CFR 367.4340 - Account 434, Extraordinary income.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Account 434, Extraordinary income. 367.4340 Section 367.4340 Conservation of Power and Water Resources FEDERAL ENERGY REGULATORY COMMISSION, DEPARTMENT OF ENERGY REGULATIONS UNDER THE PUBLIC UTILITY HOLDING COMPANY ACT OF 2005, FEDERAL POWER ACT AND NATURAL GAS ACT UNIFOR...

  9. 18 CFR 367.4350 - Account 435, Extraordinary deductions.

    Science.gov (United States)

    2010-04-01

    ... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Account 435, Extraordinary deductions. 367.4350 Section 367.4350 Conservation of Power and Water Resources FEDERAL ENERGY REGULATORY COMMISSION, DEPARTMENT OF ENERGY REGULATIONS UNDER THE PUBLIC UTILITY HOLDING COMPANY ACT OF 2005, FEDERAL POWER ACT AND NATURAL GAS ACT...

  10. 5 CFR 2635.503 - Extraordinary payments from former employers.

    Science.gov (United States)

    2010-01-01

    ... employers. 2635.503 Section 2635.503 Administrative Personnel OFFICE OF GOVERNMENT ETHICS GOVERNMENT ETHICS STANDARDS OF ETHICAL CONDUCT FOR EMPLOYEES OF THE EXECUTIVE BRANCH Impartiality in Performing Official Duties § 2635.503 Extraordinary payments from former employers. (a) Disqualification requirement. Except...

  11. Quasioptical devices based on extraordinary transmission at THz

    Science.gov (United States)

    Beruete, Miguel

    2016-04-01

    In this work I will present our latest advances in components developed from extraordinary transmission concepts operating at terahertz (THz) frequencies. First, a structure exhibiting two different extraordinary transmission resonances depending on the polarization of the incident wave will be shown. The peaks of transmission appear at approximately 2 and 2.5 THz for vertical and horizontal polarization, respectively, with a transmittance above 60% in both cases. Later on, a meandering line structure able to tune the extraordinary transmission resonance will be discussed. The operation frequency in this case is between 9 and 17 THz. A self-complementary polarizer will be then presented, with a high polarization purity. The fundamentals of this device based on the Babinet's principle will be discussed in depth. Finally, all these structures will be combined together to produce a dual-band Quarter Wave Plate able to convert a linear polarization at the input in a circular polarization at the output at two different bands, 1 and 2.2. THz. Some final words regarding the potential of extraordinary transmission for sensing applications will close the contribution.

  12. Extraordinary phenomenology from warped flavor triviality

    International Nuclear Information System (INIS)

    Delaunay, Cedric; Gedalia, Oram; Lee, Seung J.; Perez, Gilad; Ponton, Eduardo

    2011-01-01

    Anarchic warped extra dimensional models provide a solution to the hierarchy problem. They can also account for the observed flavor hierarchies, but only at the expense of little hierarchy and CP problems, which naturally require a Kaluza-Klein (KK) scale beyond the LHC reach. We have recently shown that when flavor issues are decoupled, and assumed to be solved by UV physics, the framework's parameter space greatly opens. Given the possibility of a lower KK scale and composite light quarks, this class of flavor triviality models enjoys a rather exceptional phenomenology, which is the focus of this Letter. We also revisit the anarchic RS EDM problem, which requires m KK ≥12 TeV, and show that it is solved within flavor triviality models. Interestingly, our framework can induce a sizable differential tt-bar forward-backward asymmetry, and leads to an excess of massive boosted di-jet events, which may be linked to the recent findings of the CDF Collaboration. This feature may be observed by looking at the corresponding planar flow distribution, which is presented here. Finally we point out that the celebrated standard model preference towards a light Higgs is significantly reduced within our framework.

  13. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  14. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

  15. Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

    International Nuclear Information System (INIS)

    Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

    2002-01-01

    The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  16. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  17. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  18. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  19. Placement by thermodynamic simulated annealing

    International Nuclear Information System (INIS)

    Vicente, Juan de; Lanchares, Juan; Hermida, Roman

    2003-01-01

    Combinatorial optimization problems arise in different fields of science and engineering. There exist some general techniques coping with these problems such as simulated annealing (SA). In spite of SA success, it usually requires costly experimental studies in fine tuning the most suitable annealing schedule. In this Letter, the classical integrated circuit placement problem is faced by Thermodynamic Simulated Annealing (TSA). TSA provides a new annealing schedule derived from thermodynamic laws. Unlike SA, temperature in TSA is free to evolve and its value is continuously updated from the variation of state functions as the internal energy and entropy. Thereby, TSA achieves the high quality results of SA while providing interesting adaptive features

  20. Parametric decay of an extraordinary electromagnetic wave in relativistic plasma

    Energy Technology Data Exchange (ETDEWEB)

    Dorofeenko, V. G. [Institute for Advanced Studies (Austria); Krasovitskiy, V. B., E-mail: krasovit@mail.ru [Keldysh Institute of Applied Mathematics (Russian Federation); Turikov, V. A. [Peoples’ Friendship University of Russia (Russian Federation)

    2015-03-15

    Parametric instability of an extraordinary electromagnetic wave in plasma preheated to a relativistic temperature is considered. A set of self-similar nonlinear differential equations taking into account the electron “thermal” mass is derived and investigated. Small perturbations of the parameters of the heated plasma are analyzed in the linear approximation by using the dispersion relation determining the phase velocities of the fast and slow extraordinary waves. In contrast to cold plasma, the evanescence zone in the frequency range above the electron upper hybrid frequency vanishes and the asymptotes of both branches converge. Theoretical analysis of the set of nonlinear equations shows that the growth rate of decay instability increases with increasing initial temperature of plasma electrons. This result is qualitatively confirmed by numerical simulations of plasma heating by a laser pulse injected from vacuum.

  1. Extraordinary Hall-effect in colloidal magnetic nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Gur, Leah; Tirosh, Einat [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Segal, Amir [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Markovich, Gil, E-mail: gilmar@post.tau.ac.il [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Gerber, Alexander, E-mail: gerber@post.tau.ac.il [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel)

    2017-03-15

    Colloidal nickel nanoparticles (NPs) coated with polyvinylpyrrolidone (PVP) were synthesized. The nanoparticle dispersions were deposited on substrates and dried under mild heating to form conductive films. The films exhibited very small coercivity, nearly metallic conductivity, and a significant extraordinary Hall effect signal. This method could be useful for preparing simple, printed magnetic field sensors with the advantage of relatively high sensitivity around zero magnetic field, in contrast to magnetoresistive sensors, which have maximal field sensitivity away from zero magnetic field. - Highlights: • Ni nanoparticle ink capable of forming conductive films on drying. • The Ni nanoparticle films exhibit significant extraordinary Hall effect. • This system could be used for preparing printed magnetic field sensors integrated in 3D printed structures.

  2. Manipulating Acoustic Wavefront by Inhomogeneous Impedance and Steerable Extraordinary Reflection

    Science.gov (United States)

    Zhao, Jiajun; Li, Baowen; Chen, Zhining; Qiu, Cheng-Wei

    2013-08-01

    We unveil the connection between the acoustic impedance along a flat surface and the reflected acoustic wavefront, in order to empower a wide wariety of novel applications in acoustic community. Our designed flat surface can generate double reflections: the ordinary reflection and the extraordinary one whose wavefront is manipulated by the proposed impedance-governed generalized Snell's law of reflection (IGSL). IGSL is based on Green's function and integral equation, instead of Fermat's principle for optical wavefront manipulation. Remarkably, via the adjustment of the designed specific acoustic impedance, extraordinary reflection can be steered for unprecedented acoustic wavefront while that ordinary reflection can be surprisingly switched on or off. The realization of the complex discontinuity of the impedance surface has been proposed using Helmholtz resonators.

  3. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  4. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.

    2016-01-01

    Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

  5. Extraordinary optical transmission through nonlocal holey metal films

    DEFF Research Database (Denmark)

    David, Christin; Christensen, Johan

    2017-01-01

    We investigate nonlocal electrodynamics based on the generalized hydrodynamic approach including electron diffusion in holey gold films, showing extraordinary optical transmission (EOT). Dramatic changes with respect to the local approximation for rather large film thicknesses t less than...... or similar to 100 nm impact both reflectance and absorbance at normal incidence. Beyond the familiar resonance blueshift with the decreasing film thickness, the interference of longitudinal pressure waves in the holey structure generates an unexpected oscillatory response with geometrical parameters...

  6. The League of Extraordinary Gentlemen as (Literary) History

    DEFF Research Database (Denmark)

    Backe, Hans-Joachim

    2017-01-01

    Alan Moore and Kevin O’Neill’s series The League of Extraordinary Gentlemen, published since 1999, depicts a world which is populated by characters of fiction, from Allan Quatermain and Captain Nemo to James Bond and Harry Potter. The result is not only a meta-fictional bricolage of cornerstones ...... about the feedback between history and literary history through the lens of comics and the medium’s own development....

  7. Experimental realization of extraordinary acoustic transmission using Helmholtz resonators

    Directory of Open Access Journals (Sweden)

    Brian C. Crow

    2015-02-01

    Full Text Available The phenomenon of extraordinary acoustic transmission through a solid barrier with an embedded Helmholtz resonator (HR is demonstrated. The Helmholtz resonator consists of an embedded cavity and two necks that protrude, one on each side of the barrier. Extraordinary transmission occurs for a narrow spectral range encompassing the resonant frequency of the Helmholtz resonator. We show that an amplitude transmission of 97.5% is achieved through a resonator whose neck creates an open area of 6.25% of the total barrier area. In addition to the enhanced transmission, we show that there is a smooth, continuous phase transition in the transmitted sound as a function of frequency. The frequency dependent phase transition is used to experimentally realize slow wave propagation for a narrow-band Gaussian wave packet centered at the maximum transmission frequency. The use of parallel pairs of Helmholtz resonators tuned to different resonant frequencies is experimentally explored as a means of increasing the transmission bandwidth. These experiments show that because of the phase transition, there is always a frequency between the two Helmholtz resonant frequencies at which destructive interference occurs whether the resonances are close or far apart. Finally, we explain how the phase transition associated with Helmholtz-resonator-mediated extraordinary acoustic transmission can be exploited to produce diffractive acoustic components including sub-wavelength thickness acoustic lenses.

  8. Some Advances in the Circuit Modeling of Extraordinary Optical Transmission

    Directory of Open Access Journals (Sweden)

    F. Medina

    2009-06-01

    Full Text Available The phenomenon of extraordinary optical transmission (EOT through electrically small holes perforated on opaque metal screens has been a hot topic in the optics community for more than one decade. This experimentally observed frequency-selective enhanced transmission of electromagnetic power through holes, for which classical Bethe's theory predicts very poor transmission, later attracted the attention of engineers working on microwave engineering or applied electromagnetics. Extraordinary transmission was first linked to the plasma-like behavior of metals at optical frequencies. However, the primary role played by the periodicity of the distribution of holes was soon made evident, in such a way that extraordinary transmission was disconnected from the particular behavior of metals at optical frequencies. Indeed, the same phenomenon has been observed in the microwave and millimeter wave regime, for instance. Nowadays, the most commonly accepted theory explains EOT in terms of the interaction of the impinging plane wave with the surface plasmon-polariton-Bloch waves (SPP-Bloch supported by the periodically perforated plate. The authors of this paper have recently proposed an alternative model whose details will be briefly summarized here. A parametric study of the predictions of the model and some new potential extensions will be reported to provide additional insight.

  9. Methodological Approach Into Researching Traffic Under Extraordinary Security Circumstances

    Directory of Open Access Journals (Sweden)

    Peter-Anthony Ercegovac

    2008-09-01

    Full Text Available The complexity of researching traffic under extraordinaryconditions in order to implement a more efficient and functionaltraffic management strategy under both normal and irregularconditions- as well as the grey zone of when the changefrom normal into extraordinary traffic conditions actually occur-provides the researcher with numerous methodologicalproblems.Starting from the viewpoint that the field of traffic scienceneeds an increase into the capacity of research into traffic underextraordinary conditions we have chosen to define withinthis article a specific methodological approach that undertakesa study into the exposure, menace, threat and risk faced by trafficsystems under extraordinary conditions through utilisingmethods utilised by the military that allow for the possible resolutionof such problems through compatible testing of both simulatedand real life conditions that such systems may face.In searching for possible applicable solutions to such demandingparametres we believe that the use of concrete informationin real time and real space in order to bring about amore efficient functioning of traffic under extraordinary conditionscan be achieved through the use of the analytical capacityof traffic systems information gathering attained through theusage of Uninhabited Flying Vehicles (UFVs in monitoringroad, rail and maritime traffic and transport.

  10. Influence of alloying and secondary annealing on anneal hardening ...

    Indian Academy of Sciences (India)

    Unknown

    Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys. SVETLANA NESTOROVIC. Technical Faculty Bor, University of Belgrade, Bor, Yugoslavia. MS received 11 February 2004; revised 29 October 2004. Abstract. This paper reports results of investigation carried out on sintered ...

  11. DOE's annealing prototype demonstration projects

    International Nuclear Information System (INIS)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-01-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

  12. On the annealing-induced enhancement of the interface properties of NiO:Cu/wet-SiOx/n-Si tunnelling junction solar cells

    Science.gov (United States)

    Yang, Xueliang; Liu, Wei; Chen, Jingwei; Sun, Yun

    2018-04-01

    Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential to reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, a p-type oxide, Cu-doped NiO (NiO:Cu), is explored as a transparent hole-selective contact to n-Si. An ultrathin SiOx layer, fabricated by a wet-chemical method (wet-SiOx), is introduced at the NiO:Cu/n-Si interface to achieve a tunnelling junction solar cell. Interestingly, it was observed that the interface quality of the NiO:Cu/wet-SiOx/n-Si heterojunction was dramatically enhanced by post-deposition annealing (PDA) at a temperature of 200 °C. Our device exhibits an improved power conversion efficiency of 10.8%, which is the highest efficiency among NiO/Si heterojunction photo-electric devices to date. It is demonstrated that the 200 °C PDA treatment enhances the built-in field by a reduction in the interface density of states (Dit) but does not influence the work function of the NiO:Cu thin layer. This stable work function after the PDA treatment is in conflict with the changed built-in field according to the Schottky model. Thus, the Bardeen model is introduced for this physical insight: the enhancement of the built-in field originates from the unpinning of the Fermi levels of NiO:Cu and n-Si by the interface state reduction.

  13. Simulated annealing and circuit layout

    NARCIS (Netherlands)

    Aarts, E.H.L.; Laarhoven, van P.J.M.

    1991-01-01

    We discuss the problem of approximately sotvlng circuit layout problems by simulated annealing. For this we first summarize the theoretical concepts of the simulated annealing algorithm using Ihe theory of homogeneous and inhomogeneous Markov chains. Next we briefly review general aspects of the

  14. Radiation annealing in cuprous oxide

    DEFF Research Database (Denmark)

    Vajda, P.

    1966-01-01

    Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

  15. Extraordinary tunable dynamic range of electrochemical aptasensor for accurate detection of ochratoxin A in food samples

    Directory of Open Access Journals (Sweden)

    Lin Cheng

    2017-06-01

    Full Text Available We report the design of a sensitive, electrochemical aptasensor for detection of ochratoxin A (OTA with an extraordinary tunable dynamic sensing range. This electrochemical aptasensor is constructed based on the target induced aptamer-folding detection mechanism and the recognition between OTA and its aptamers results in the conformational change of the aptamer probe and thus signal changes for measurement. The dynamic sensing range of the electrochemical aptasensor is successfully tuned by introduction of free assistant aptamer probes in the sensing system. Our electrochemical aptasensor shows an extraordinary dynamic sensing range of 11-order magnitude of OTA concentration from 10−8 to 102 ng/g. Of great significance, the signal response in all OTA concentration ranges is at the same current scale, demonstrating that our sensing protocol in this research could be applied for accurate detections of OTA in a broad range without using any complicated treatment of signal amplification. Finally, OTA spiked red wine and maize samples in different dynamic sensing ranges are determined with the electrochemical aptasensor under optimized sensing conditions. This tuning strategy of dynamic sensing range may offer a promising platform for electrochemical aptasensor optimizations in practical applications.

  16. Production and beam annealing of damage in carbon implanted silicon

    International Nuclear Information System (INIS)

    Kool, W.H.; Roosendaal, H.E.; Wiggers, L.W.; Saris, F.W.

    1978-01-01

    The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H + and He + beams in the energy interval 30 to 200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to a quantity introduced in an earlier paper in order to describe saturation effects in the damage production after H + or He + impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction. (author)

  17. Solvent vapor annealing of an insoluble molecular semiconductor

    KAUST Repository

    Amassian, Aram

    2010-01-01

    Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

  18. Understanding Extraordinary Architectural Experiences through Content Analysis of Written Narratives

    Directory of Open Access Journals (Sweden)

    Brandon Richard Ro

    2015-12-01

    Full Text Available This study a identifies how people describe, characterize, and communicate in written form Extraordinary Architectural Experiences (EAE, and b expands the traditional qualitative approach to architectural phenomenology by demonstrating a quantitative method to analyze written narratives. Specifically, this study reports on the content analysis of 718 personal accounts of EAEs. Using a deductive, ‘theory-driven’ approach, these narratives were read, coded, and statistically analyzed to identify storyline structure, convincing power, and the relationship between subjective and objective experiential qualities used in the story-telling process. Statistical intercoder agreement tests were conducted to verify the reliability of the interpretations to approach the hard problem of “extraordinary aesthetics” in architecture empirically. The results of this study confirm the aesthetic nature of EAE narratives (and of told experiences by showing their higher dependence on external objective content (e.g., a building’s features and location rather than its internal subjective counterpart (e.g., emotions and sensations, which makes them more outwardly focused. The strong interrelationships and intercoder agreement between the thematic realms provide a unique aesthetic construct revealing EAE narratives as memorable, embodied, emotional events mapped by the externally focused content of place, social setting, time, and building features. A majority of EAE narratives were found to possess plot-structure along with significant relationships to objective-subjective content that further grounded their storylines. This study concludes that content analysis provides not only a valid method to understand written narratives about extraordinary architectural experiences quantitatively, but also a view as to how to map the unique nature of aesthetic phenomenology empirically.

  19. Stresses on nuclear power plant buildings by extraordinary events

    International Nuclear Information System (INIS)

    Woelfel, E.

    1977-01-01

    Nuclear power plant buildings must be functional to such an extend that even after the occurence of extraordinary events (earthquake, airoplane crash, gas cloud explosion), the reactor can be safety shut off, in order to avoid danger from the nuclear power plant. Evidence for this can only be given by calculations which shall meet the following requirements: The calculation results shall be safe and reliable. The calculation effort shall match the realizable accuracy. The calculation shall lead to an economical determination. An example of ascertainment of nuclear power plants in regard to earthquakes, shows the difficulties standing against a fulfillment of these requirements. (orig.) [de

  20. Age structure changes and extraordinary lifespan in wild medfly populations.

    Science.gov (United States)

    Carey, James R; Papadopoulos, Nikos T; Müller, Hans-Georg; Katsoyannos, Byron I; Kouloussis, Nikos A; Wang, Jane-Ling; Wachter, Kenneth; Yu, Wei; Liedo, Pablo

    2008-06-01

    The main purpose of this study was to test the hypotheses that major changes in age structure occur in wild populations of the Mediterranean fruit fly (medfly) and that a substantial fraction of individuals survive to middle age and beyond (> 3-4 weeks). We thus brought reference life tables and deconvolution models to bear on medfly mortality data gathered from a 3-year study of field-captured individuals that were monitored in the laboratory. The average time-to-death of captured females differed between sampling dates by 23.9, 22.7, and 37.0 days in the 2003, 2004, and 2005 field seasons, respectively. These shifts in average times-to-death provided evidence of changes in population age structure. Estimates indicated that middle-aged medflies (> 30 days) were common in the population. A surprise in the study was the extraordinary longevity observed in field-captured medflies. For example, 19 captured females but no reference females survived in the laboratory for 140 days or more, and 6 captured but no reference males survived in the laboratory for 170 days or more. This paper advances the study of aging in the wild by introducing a new method for estimating age structure in insect populations, demonstrating that major changes in age structure occur in field populations of insects, showing that middle-aged individuals are common in the wild, and revealing the extraordinary lifespans of wild-caught individuals due to their early life experience in the field.

  1. Rheo-optical two-dimensional (2D) near-infrared (NIR) correlation spectroscopy for probing strain-induced molecular chain deformation of annealed and quenched Nylon 6 films

    Science.gov (United States)

    Shinzawa, Hideyuki; Mizukado, Junji

    2018-04-01

    A rheo-optical characterization technique based on the combination of a near-infrared (NIR) spectrometer and a tensile testing machine is presented here. In the rheo-optical NIR spectroscopy, tensile deformations are applied to polymers to induce displacement of ordered or disordered molecular chains. The molecular-level variation of the sample occurring on short time scales is readily captured as a form of strain-dependent NIR spectra by taking an advantage of an acousto-optic tunable filter (AOTF) equipped with the NIR spectrometer. In addition, the utilization of NIR with much less intense absorption makes it possible to measure transmittance spectra of relatively thick samples which are often required for conventional tensile testing. An illustrative example of the rheo-optical technique is given with annealed and quenched Nylon 6 samples to show how this technique can be utilized to derive more penetrating insight even from the seemingly simple polymers. The analysis of the sets of strain-dependent NIR spectra suggests the presence of polymer structures undergoing different variations during the tensile elongation. For instance, the tensile deformation of the semi-crystalline Nylon 6 involves a separate step of elongation of the rubbery amorphous chains and subsequent disintegration of the rigid crystalline structure. Excess amount of crystalline phase in Nylon 6, however, results in the retardation of the elastic deformation mainly achieved by the amorphous structure, which eventually leads to the simultaneous orientation of both amorphous and crystalline structures.

  2. Manipulation of extraordinary acoustic transmission by a tunable bull's eye structure

    International Nuclear Information System (INIS)

    Wang Ji-Wei; Cheng Ying; Liu Xiao-Jun

    2014-01-01

    Extraordinary acoustic transmission (EAT) has been investigated in a tunable bull's eye structure. We demonstrate that the transmission coefficient of acoustic waves can be modulated by a grating structure. When the grating is located at a distance of 0.5 mm from the base plate, the acoustic transmission shows an 8.77-fold enhancement compared to that by using a traditional bull's eye structure. When the distance increases to 1.5 mm, the transmission approaches zero, indicating a total reflection. Thus, we can make an efficient modulation of acoustic transmission from 0 to 877%. The EAT effects have been ascribed to the coupling of structure-induced resonance with the diffractive wave and the waveguide modes, as well as the Fabry-Perot resonances. As a potential application, the modulation of far-field collimation is illustrated in the proposed bull's eye structure. (rapid communication)

  3. Mathematical foundation of quantum annealing

    International Nuclear Information System (INIS)

    Morita, Satoshi; Nishimori, Hidetoshi

    2008-01-01

    Quantum annealing is a generic name of quantum algorithms that use quantum-mechanical fluctuations to search for the solution of an optimization problem. It shares the basic idea with quantum adiabatic evolution studied actively in quantum computation. The present paper reviews the mathematical and theoretical foundations of quantum annealing. In particular, theorems are presented for convergence conditions of quantum annealing to the target optimal state after an infinite-time evolution following the Schroedinger or stochastic (Monte Carlo) dynamics. It is proved that the same asymptotic behavior of the control parameter guarantees convergence for both the Schroedinger dynamics and the stochastic dynamics in spite of the essential difference of these two types of dynamics. Also described are the prescriptions to reduce errors in the final approximate solution obtained after a long but finite dynamical evolution of quantum annealing. It is shown there that we can reduce errors significantly by an ingenious choice of annealing schedule (time dependence of the control parameter) without compromising computational complexity qualitatively. A review is given on the derivation of the convergence condition for classical simulated annealing from the view point of quantum adiabaticity using a classical-quantum mapping

  4. Study of rolled uranium annealing process

    International Nuclear Information System (INIS)

    Cabane, G.

    1954-06-01

    The dilatometric study of rolled uranium clearly shows not only the expansions or contractions induced by stress relief or diffusion of vacancies, but also the slope variations of the cooling curves, which are the best evidence of a texture change. Under the microscope, hard-rolled sheets appear as a mixture of two distinct structures; it is also possible by intermediate annealing to prepare homogeneous sheets of either structure, i.e. twinned or untwinned. All these sheets which have similar textures, undergo at first a primary recrystallization beginning at 320 deg C, then a texture change without any apparent crystal growth, at about 430 deg C. (author) [fr

  5. An extraordinary transmission analogue for enhancing microwave antenna performance

    Directory of Open Access Journals (Sweden)

    Sarin V. Pushpakaran

    2015-10-01

    Full Text Available The theory of diffraction limit proposed by H.A Bethe limits the total power transfer through a subwavelength hole. Researchers all over the world have gone through different techniques for boosting the transmission through subwavelength holes resulting in the Extraordinary Transmission (EOT behavior. We examine computationally and experimentally the concept of EOT nature in the microwave range for enhancing radiation performance of a stacked dipole antenna working in the S band. It is shown that the front to back ratio of the antenna is considerably enhanced without affecting the impedance matching performance of the design. The computational analysis based on Finite Difference Time Domain (FDTD method reveals that the excitation of Fabry-Perot resonant modes on the slots is responsible for performance enhancement.

  6. Optimization of extraordinary optical absorption in plasmonic and dielectric structures

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Sigmund, Ole

    2013-01-01

    Extraordinary optical absorption (EOA) can be obtained by plasmonic surface structuring. However, studies that compare the performance of these plasmonic devices with similar structured dielectric devices are rarely found in the literature. In this work we show different methods to enhance the EOA...... by optimizing the geometry of the surface structuring for both plasmonic and dielectric devices, and the optimized performances are compared. Two different problem types with periodic structures are considered. The first case shows that strips of silicon on a surface can increase the absorption in an underlying...... it is important to compare the absorption performance of plasmonic devices with similarly structured dielectric devices in order to find the best possible solution....

  7. U.S./China Bilateral Symposium on Extraordinary Floods

    Science.gov (United States)

    Kirby, W.

    Accurate appraisal of the risk of extreme floods has long been of concern to hydrologists and water resources managers in both the United States and China. In order to exchange information, assess current developments, and discuss further needs in extreme flood analysis, the U.S. Geological Survey (USGS) and the Bureau of Hydrology of the Ministry of Water Resources and Electric Power of the People's Republic of China (PRC) held the Bilateral Symposium on the Analysis of Extraordinary Flood Events, October 14-18, 1985, in Nanjing, China. Co-convenors of the symposium were Marshall E. Moss (USGS) and Hua Shiqian (Nanjing Research Institute of Hydrology). Liang Ruiju (East China Technical University of Water Resources) was executive secretary of the organizing committee. Participants included 23 U.S. delegates, 36 Chinese delegates, and five guests from other countries. Of the U.S. delegates, 13 were from federal agencies, seven were from universities, and three were private consultants. The U.S. National Science Foundation gave financial support to the nonfederal U.S. delegates. Major topics covered in the 52 papers presented included detection of historical floods and evaluation of the uncertainties in their peak discharges and times of occurrence,frequency analysis and design flood determination in the presence of extraordinary floods and historic floods, anduse of storm data in determining design storms and design floods, The symposium was followed by a 6-day study tour in central China, during which laboratories, field activities, and offices of various water resources agencies were visited and sites of documented historic floods on the Yangtze River and its tributaries were examined.

  8. The effect of annealing and desulfurization on oxide spallation of turbine airfoil material

    International Nuclear Information System (INIS)

    Briant, C.L.; Murphy, W.H.; Schaeffer, J.C.

    1995-01-01

    In this paper the authors report a study that addresses the sulfur-induced spallation theory. Previous work has shown that a high temperature anneal in hydrogen desulfurizes nickel-base alloys and greatly improves their resistance to oxide spallation. The authors will show that such an anneal can be applied successfully to a Ni-base airfoil material. Both Auger segregation experiments and chemical analyses show that this anneal desulfurizes the material, at least in the absence of yttrium. However, the results suggest that factors other than desulfurization may be contributing to the improvement in spallation resistance produced by the anneal

  9. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    International Nuclear Information System (INIS)

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-01-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

  10. Management of the Bohunice RPVs annealing procedures

    International Nuclear Information System (INIS)

    Repka, M.

    1994-01-01

    The program of annealing regeneration procedure of RPVs units 1 and 2 of NPP V-1 (EBO) realization in the year 1993, is the topic of this paper. In the paper the following steps are described in detail: the preparation works, the annealing procedure realization schedule and safety management: starting with zero conditions, assembling of annealing apparatus, annealing procedure, cooling down and disassembling procedure of annealing apparatus. At the end the programs of annealing of both RPVs including the dosimetry measurements are discussed and evaluated. (author). 3 figs

  11. Analysis of Experimentation Results on University Graduates' Readiness Formation to Act in Extraordinary Situations

    Science.gov (United States)

    Moloshavenko, Vera L.; Prozorova, Galina V.; Sienkiewicz, Lyudmila B.

    2016-01-01

    The article presents the experimentation on graduates' readiness formation to act in extraordinary situations conducted in the Tyumen Industrial University in training bachelors in "Oil and Gas Business". The criteria of graduates' readiness formation to act in extraordinary situations are the following: practicability, validity,…

  12. 78 FR 40665 - Cost Accounting Standards: CAS 413 Pension Adjustments for Extraordinary Events

    Science.gov (United States)

    2013-07-08

    ... Accounting Standards: CAS 413 Pension Adjustments for Extraordinary Events AGENCY: Cost Accounting Standards...: The Office of Federal Procurement Policy (OFPP), Cost Accounting Standards (CAS) Board, is conducting... Extraordinary Events. This is the first step in a four- step process that may result in a final rule. As part of...

  13. 40 CFR 80.73 - Inability to produce conforming gasoline in extraordinary circumstances.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 16 2010-07-01 2010-07-01 false Inability to produce conforming gasoline in extraordinary circumstances. 80.73 Section 80.73 Protection of Environment ENVIRONMENTAL... Gasoline § 80.73 Inability to produce conforming gasoline in extraordinary circumstances. In appropriate...

  14. Manipulation of magnetic properties of glass-coated microwires by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Chichay, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Talaat, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); Rodionova, V. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); National University of Science and Technology (MISIS), 119049 Moscow (Russian Federation); Blanco, J.M. [Dpto. Física Aplicada, EUPDS Basque Country University UPV/EHU (Spain); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain)

    2015-06-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect.

  15. Manipulation of magnetic properties of glass-coated microwires by annealing

    International Nuclear Information System (INIS)

    Zhukov, A.; Chichay, K.; Talaat, A.; Rodionova, V.; Blanco, J.M.; Ipatov, M.; Zhukova, V.

    2015-01-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect

  16. Global optimization and simulated annealing

    NARCIS (Netherlands)

    Dekkers, A.; Aarts, E.H.L.

    1988-01-01

    In this paper we are concerned with global optimization, which can be defined as the problem of finding points on a bounded subset of Rn in which some real valued functionf assumes its optimal (i.e. maximal or minimal) value. We present a stochastic approach which is based on the simulated annealing

  17. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.

    2013-02-13

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device\\'s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.

  18. UFOs and nukes. Extraordinary encounters at nuclear weapons sites

    International Nuclear Information System (INIS)

    Hastings, Robert L.

    2015-01-01

    Everyone knows about the reported recovery of a crashed alien spaceship near Roswell, New Mexico in July 1947. However, most people are unaware that, at the time of the incident, Roswell Army Airfield was home to the world's only atomic bomber squadron, the 509th Bomb Group. Was this merely a coincidence? During the Cold War, the United States and the Soviet Union built thousands of the far more destructive hydrogen bombs, some of them a thousand times as destructive as the first atomic bombs dropped on Japan. If the nuclear standoff between the superpowers had erupted into World War III, human civilization - and perhaps the very survival of our species - would have been at risk. Did this ominous state of affairs come to the attention of outside observers? Was there a connection between the atomic bomber squadron based at Roswell and the reported crash of a UFO nearby? Did those who pilot the UFOs monitor the superpowers' nuclear arms race during the dangerous Cold War era? Do they scrutinize American and Russian weapons sites even now? UFOs and Nukes provides the startling and sometimes shocking answers to these questions. Veteran researcher Robert Hastings has investigated nuclear weapons-related UFO incidents for more than three decades and has interviewed more than 120 ex-US Air Force personnel, from former Airmen to retired Colonels, who witnessed extraordinary UFO encounters at nuclear weapons sites. Their amazing stories are presented here.

  19. Extraordinary experiences in its cultural and theoretical context.

    Science.gov (United States)

    von Lucadou, Walter; Wald, Franziska

    2014-06-01

    The growing complexity, opaqueness and specialization of many areas of life and - above all - a booming psychological and esoteric market create the necessity for counselling and advice for individuals who encounter so-called 'paranormal' experiences. These experiences are often interpreted as 'transpersonal' or 'spiritual', depending on the cultural background and religious traditions. The term 'spiritual crisis' has become a fashionable diagnosis with some transpersonal psychotherapists. Paranormal experiences, regardless of their acceptance of academic psychology and psychiatry, are still a taboo subject in society. The Parapsychological Counselling Office in Freiburg is a professional unit with governmental support, which helps individuals to cope with such experiences adequately. The work and responsibilities of the counselling centre are presented. A large collection of cases in the form of letters, which were sent in by individuals wanting to communicate their unusual or extraordinary experiences have been analysed. Some of the results are reported here. Finally, we discuss a special form of 'inexplicable experiences' based on a theoretical model. Its recommendations seem counter-intuitive but are ultimately successful. The model starts from a system-theoretical viewpoint and uses concepts such as complementarity and entanglement of generalized quantum theory (GQT) and the model of pragmatic information (MPI). Since it turned out that individuals who contact the counselling centre also offer their own interpretations and 'explanation', the question arises, how these resources can be used to help clients.

  20. Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

    Directory of Open Access Journals (Sweden)

    Jürgen Kosel

    2013-02-01

    Full Text Available The Extraordinary Magnetoresistance (EMR effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed.

  1. Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

    Science.gov (United States)

    Sun, Jian; Kosel, Jürgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. PMID:28809321

  2. Effect of hydration on the annealing of chemical radiation damage in gamma-irradiated strontium bromate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; Sahish, T.S.

    1991-01-01

    Rehydration of γ-irradiated anhydrous strontium bromate induces direct recovery of damage. The recovery process is unimolecular and the rehydrated salt is susceptible to thermal annealing. (author) 11 refs.; 2 figs

  3. Modeling of irradiation embrittlement and annealing/recovery in pressure vessel steels

    International Nuclear Information System (INIS)

    Lott, R.G.; Freyer, P.D.

    1996-01-01

    The results of reactor pressure vessel (RPV) annealing studies are interpreted in light of the current understanding of radiation embrittlement phenomena in RPV steels. An extensive RPV irradiation embrittlement and annealing database has been compiled and the data reveal that the majority of annealing studies completed to date have employed test reactor irradiated weldments. Although test reactor and power reactor irradiations result in similar embrittlement trends, subtle differences between these two damage states can become important in the interpretation of annealing results. Microstructural studies of irradiated steels suggest that there are several different irradiation-induced microstructural features that contribute to embrittlement. The amount of annealing recovery and the post-anneal re-embrittlement behavior of a steel are determined by the annealing response of these microstructural defects. The active embrittlement mechanisms are determined largely by the irradiation temperature and the material composition. Interpretation and thorough understanding of annealing results require a model that considers the underlying physical mechanisms of embrittlement. This paper presents a framework for the construction of a physically based mechanistic model of irradiation embrittlement and annealing behavior

  4. Ensemble annealing of complex physical systems

    OpenAIRE

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

  5. Pattern Laser Annealing by a Pulsed Laser

    Science.gov (United States)

    Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

    1981-10-01

    Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

  6. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  7. Computational Multiqubit Tunnelling in Programmable Quantum Annealers

    Science.gov (United States)

    2016-08-25

    ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

  8. Extraordinary proliferation of microorganisms in aposymbiotic pea aphids, Acyrthosiphon pisum.

    Science.gov (United States)

    Nakabachi, Atsushi; Ishikawa, Hajime; Kudo, Toshiaki

    2003-03-01

    Aposymbiotic pea aphids, which were deprived of their intracellular symbiotic bacterium, Buchnera, exhibit growth retardation and no fecundity. High performance liquid chromatographic (HPLC) analysis revealed that these aposymbiotic aphids, when reared on broad bean plants, accumulated a large amount of histamine. To assess the possibility of extraordinary proliferation of microorganisms other than Buchnera, we enumerated eubacteria and fungi in aphids using the real-time quantitative PCR method that targets genes encoding small-subunit rRNAs. The result showed that these microorganisms were extremely abundant in the aposymbiotic aphids reared on plants. Microbial communities in aposymbiotic aphids were further profiled by phylogenetic analysis of small-subunit rDNAs. Of 172 nonchimeric sequences of fungal 18S rDNAs, 138 (80.2%) belonged to the phylum Ascomycota. Among them, 21 clustered within a monophyletic group consisting of insect-pathogenic fungi and yeast-like symbionts of homopteran insects. Thirty-one (18.0%), two (1.2%), and one (0.6%) clones were clustered within the Basidiomycota, Zygomycota, and Oomycota, respectively. Of 167 nonchimeric sequences of eubacterial 16S rDNAs, 84 (50.3%) belonged to the gamma-subdivision of Proteobacteria to which most primary endosymbionts of insects and prolific histamine producers belong. Forty (24.0%), 25 (15.0%), 10 (6.0%), and five (3.0%) clones were clustered within alpha-Proteobacteria, Cytophaga-Flavobacterium-Bacteroides (CFB) group, Actinobacteria, and beta-Proteobacteria, respectively. Three had no phylogenetic association with known taxonomic divisions. None of the sequences studied in this study coincided exactly with those deposited in GenBank.

  9. Very fast simulated re-annealing

    OpenAIRE

    L. Ingber

    1989-01-01

    Draft An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ‘‘temperature’’ T decreasing exponentially in annealing-time k, T = T0 exp(−ck1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multidimensional parameter-space. This annealing schedule is faster than fast Cauchy annealing, ...

  10. Computational algorithm for molybdenite concentrate annealing

    International Nuclear Information System (INIS)

    Alkatseva, V.M.

    1995-01-01

    Computational algorithm is presented for annealing of molybdenite concentrate with granulated return dust and that of granulated molybdenite concentrate. The algorithm differs from the known analogies for sulphide raw material annealing by including the calculation of return dust mass in stationary annealing; the latter quantity varies form the return dust mass value obtained in the first iteration step. Masses of solid products are determined by distribution of concentrate annealing products, including return dust and benthonite. The algorithm is applied to computations for annealing of other sulphide materials. 3 refs

  11. Plasma assisted heat treatment: annealing

    International Nuclear Information System (INIS)

    Brunatto, S F; Guimaraes, N V

    2009-01-01

    This work comprises a new dc plasma application in the metallurgical-mechanical field, called plasma assisted heat treatment, and it presents the first results for annealing. Annealing treatments were performed in 90% reduction cold-rolled niobium samples at 900 deg. C and 60 min, in two different heating ways: (a) in a hollow cathode discharge (HCD) configuration and (b) in a plasma oven configuration. The evolution of the samples' recrystallization was determined by means of the microstructure, microhardness and softening rate characterization. The results indicate that plasma species (ions and neutrals) bombardment in HCD plays an important role in the recrystallization process activation and could lead to technological and economical advantages considering the metallic materials' heat treatment application. (fast track communication)

  12. DMPD: Gram-negative endotoxin: an extraordinary lipid with profound effects oneukaryotic signal transduction. [Dynamic Macrophage Pathway CSML Database

    Lifescience Database Archive (English)

    Full Text Available 1916089 Gram-negative endotoxin: an extraordinary lipid with profound effects oneuk...ep;5(12):2652-60. (.png) (.svg) (.html) (.csml) Show Gram-negative endotoxin: an extraordinary lipid with profound effects...tive endotoxin: an extraordinary lipid with profound effects oneukaryotic signal transduction. Authors Raetz

  13. Simulated annealing model of acupuncture

    Science.gov (United States)

    Shang, Charles; Szu, Harold

    2015-05-01

    The growth control singularity model suggests that acupuncture points (acupoints) originate from organizers in embryogenesis. Organizers are singular points in growth control. Acupuncture can cause perturbation of a system with effects similar to simulated annealing. In clinical trial, the goal of a treatment is to relieve certain disorder which corresponds to reaching certain local optimum in simulated annealing. The self-organizing effect of the system is limited and related to the person's general health and age. Perturbation at acupoints can lead a stronger local excitation (analogous to higher annealing temperature) compared to perturbation at non-singular points (placebo control points). Such difference diminishes as the number of perturbed points increases due to the wider distribution of the limited self-organizing activity. This model explains the following facts from systematic reviews of acupuncture trials: 1. Properly chosen single acupoint treatment for certain disorder can lead to highly repeatable efficacy above placebo 2. When multiple acupoints are used, the result can be highly repeatable if the patients are relatively healthy and young but are usually mixed if the patients are old, frail and have multiple disorders at the same time as the number of local optima or comorbidities increases. 3. As number of acupoints used increases, the efficacy difference between sham and real acupuncture often diminishes. It predicted that the efficacy of acupuncture is negatively correlated to the disease chronicity, severity and patient's age. This is the first biological - physical model of acupuncture which can predict and guide clinical acupuncture research.

  14. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

    1980-09-01

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

  15. Enhanced extraordinary optical transmission (EOT) through arrays of bridged nanohole pairs and their sensing applications

    KAUST Repository

    Yue, Weisheng; Wang, Zhihong; Yang, Yang; Li, Jingqi; Wu, Ying; Chen, Longqing; Ooi, Boon S.; Wang, Xianbin; Zhang, Xixiang

    2014-01-01

    Extraordinary optical transmission (EOT) through arrays of gold nanoholes was studied with light across the visible to the near-infrared spectrum. The EOT effect was found to be improved by bridging pairs of nanoholes due to the concentration

  16. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian; Kosel, Jü rgen

    2013-01-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment

  17. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian; Kosel, Jü rgen; Gooneratne, Chinthaka Pasan; Soh, Yeongah

    2010-01-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show

  18. Effect of annealing on refractive indices of radio-frequency magnetron sputtered waveguiding zinc oxide films on glass

    International Nuclear Information System (INIS)

    Mehan, Navina; Gupta, Vinay; Sreenivas, Kondepudy; Mansingh, Abhai

    2004-01-01

    The effects of annealing and gas composition on the refractive indices of zinc oxide films were studied in light of the structural properties. ZnO films (1 μm) were deposited by rf magnetron sputtering in different oxygen:argon mixtures on glass and annealed at 380 deg. C in air, at different times. Waveguide modes were excited in the films by prism coupling using a He-Ne laser. The estimated values of the extraordinary and ordinary refractive indices of the films, which were close to the corresponding bulk values (n e =2.006, n o =1.990), initially decreased with annealing time and later increased before becoming constant with further annealing. The variation in refractive indices was explained on the basis of contribution from both packing density p and lattice constant c of the films. The initial decrease in refractive indices was attributed to the observed lattice contraction, and the latter increase was explained in terms of the increase in packing density (p) of the films on annealing. A relation is proposed to estimate the refractive indices of films, which have the lattice constant c different from the bulk value

  19. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  20. Extraordinary mode absorption at the electron cyclotron harmonic frequencies as a Tokamak plasma diagnostic

    International Nuclear Information System (INIS)

    Pachtman, A.

    1986-09-01

    Measurements of Extraordinary mode absorption at the electron cyclotron harmonic frequencies are of unique value in high temperature, high density Tokamak plasma diagnostic applications. An experimental study of Extraordinary mode absorption at the semi-opaque second and third harmonics has been performed on the ALCATOR C Tokamak. A narrow beam of submillimeter laser radiation was used to illuminate the plasma in a horizontal plane, providing a continuous measurement of the one-pass, quasi-perpendicular transmission

  1. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  2. An extraordinary locally generated nonlinear internal wave on the shelf of northern South China Sea from marine seismic observation

    Science.gov (United States)

    Tang, Q.

    2017-12-01

    A secondary nonlinear internal wave (NIW) on the continental shelf of northern South China Sea (SCS) is studied from high resolution seismic data. It is an extraordinary complex NIW combination of two mode-2 NIWs and an NIW of elevation within a short distance of 2 km. The most energetic part of the NIW could be regarded as a mode-2 NIW localized in the upper layer between 40 and 120 m with its onset at 92 km. The vertical particle velocity of 41 cm/s may exceed the critical value of wave breaking and thus collapse the strongest stratification followed by a series of processes including internal wave breaking, overturning, Kelvin-Helmholtz (KH) instability, stratification splitting, and re-stratification eventually. Among these processes, the shear induced KH billows are directly imaged using the seismic method for the first time. The stratification splitting and re-stratification show that the unstable stage lasts only for a few hours and several kilometers. No previous work has reported the wave of elevation occurred in the deep water of 370 m. Different from the periodical NIWs originated from Luzon Strait, this secondary NIW is most likely generated locally at the shelf break during ebb tide. This is also the first seismic observation that a locally generated NIW is analyzed in detail on the continental shelf of northern SCS. A more sophisticated numerical model is necessary to simulate the extraordinary NIW and its accompanying features.

  3. The Concept of Extraordinary Crime in Indonesia Legal System: is The Concept An Effective Criminal Policy?

    Directory of Open Access Journals (Sweden)

    Vidya Prahassacitta

    2016-10-01

    Full Text Available The concept of extraordinary crime was a common concept in Indonesia. Adopts from the concept of the most serious crime in Rome Statute and adjusted with the Indonesian legal system. Then it developed wider and introduced into terrorism, corruption, drug abuse offenses, and child sexual abuse in legislations and Constitutional Court verdicts. The implementation of this concept generated some consequences in drafting and formulating the legislation as part of penal policy. This leads to two legal problems; first, what was the categorization of the concept of extraordinary crime? and second, what were the consequences of the concept extraordinary crime in accordance with penal policy?. Normative law research with literature study method, This was a conducted as the response of both legal problems. Using secondary data from legislation, Constitutional Court verdicts, book and journal, this research concludes that; the concept of extraordinary crime parts of criminal policy does not have any standard for the categorization. Then, as consequences of the implementation of the concept of extraordinary crime in several penal efforts are formulating in legislations. The penalty effort is not limited to criminalization and sentencing aspects but wider and shall be in line with the strategy of crime eradication and welfare protection purposes. To reach the effectiveness of the criminal policy of the concept of extraordinary crime, the penalty effort shall be in line with criminal law principles and human right basic principles.

  4. Quantum annealing for combinatorial clustering

    Science.gov (United States)

    Kumar, Vaibhaw; Bass, Gideon; Tomlin, Casey; Dulny, Joseph

    2018-02-01

    Clustering is a powerful machine learning technique that groups "similar" data points based on their characteristics. Many clustering algorithms work by approximating the minimization of an objective function, namely the sum of within-the-cluster distances between points. The straightforward approach involves examining all the possible assignments of points to each of the clusters. This approach guarantees the solution will be a global minimum; however, the number of possible assignments scales quickly with the number of data points and becomes computationally intractable even for very small datasets. In order to circumvent this issue, cost function minima are found using popular local search-based heuristic approaches such as k-means and hierarchical clustering. Due to their greedy nature, such techniques do not guarantee that a global minimum will be found and can lead to sub-optimal clustering assignments. Other classes of global search-based techniques, such as simulated annealing, tabu search, and genetic algorithms, may offer better quality results but can be too time-consuming to implement. In this work, we describe how quantum annealing can be used to carry out clustering. We map the clustering objective to a quadratic binary optimization problem and discuss two clustering algorithms which are then implemented on commercially available quantum annealing hardware, as well as on a purely classical solver "qbsolv." The first algorithm assigns N data points to K clusters, and the second one can be used to perform binary clustering in a hierarchical manner. We present our results in the form of benchmarks against well-known k-means clustering and discuss the advantages and disadvantages of the proposed techniques.

  5. Annealing effects on cathodoluminescence of zircon

    Science.gov (United States)

    Tsuchiya, Y.; Nishido, H.; Noumi, Y.

    2011-12-01

    U-Pb zircon dating (e. g., SHRIMP) is an important tool to interpret a history of the minerals at a micrometer-scale, where cathodoluminescence (CL) imaging allows us to recognize internal zones and domains with different chemical compositions and structural disorder at high spatial resolution. The CL of zircon is attributed by various types of emission centers, which are extrinsic ones such as REE impurities and intrinsic ones such as structural defects. Metamictization resulted from radiation damage to the lattice by alpha particles from the decay of U and Th mostly causes an effect on the CL features of zircon as a defect center. However, slightly radiation-damaged zircon, which is almost nondetectable by XRD, has not been characterized using CL method. In this study, annealing effects on CL of zircon has been investigated to clarify a recovery process of the damaged lattice at low radiation dose. A single crystal of zircon from Malawi was selected for CL measurements. It contains HfO2: 2.30 w.t %, U: 241 ppm and Th: 177 ppm. Two plate samples perpendicular to c and a axes were prepared for annealing experiments during 12 hours from room temperature to 1400 degree C. Color CL images were captured using a cold-cathode microscope (Luminoscope: Nuclide ELM-3R). CL spectral measurements were conducted using an SEM (JEOL: JSM-5410) combined with a grating monochromator (Oxford: Mono CL2) to measure CL spectra ranging from 300 to 800 nm in 1 nm steps with a temperature controlled stage. The dispersed CL was collected by a photoncounting method using a photomultiplier tube (Hamamatsu: R2228) and converted to digital data. All CL spectra were corrected for the total instrumental response. Spectral analysis reveals an anisotropy of the CL emission bands related to intrinsic defect center in blue region, radiation-induced defect center from 500 to 700 nm, and trivalent Dy impurity center at 480 and 580 nm, but their relative intensities are almost constant. CL on the

  6. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Zolper, J.C.; Pearton, S.J.

    1996-01-01

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  7. Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb{sub 0.95}La{sub 0.05}Zr{sub 0.54}Ti{sub 0.46}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Batra, Vaishali [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States); Ramana, C.V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Kotru, Sushma, E-mail: skotru@eng.ua.edu [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2016-08-30

    Highlights: • Influence of post-deposition annealing temperature (T{sub a} = 550 and 750 °C) on the chemical valence state and crystalline quality of PLZT thin films was investigated. • XPS analyses demonstrated the shift in binding energies of the constituent atoms which indicated change in chemical state with the change in T{sub a}. • Raman spectra revealed shift in optical modes with the change in T{sub a} indicating the change in phase and crystallinity in the films. • Higher T{sub a} (750 °C) resulted in PLZT films with perovskite structure, nanocrystalline morphology, and better chemical homogeneity. - Abstract: We report the effect of post deposition annealing temperature (T{sub a} = 550 and 750 °C) on the surface morphology, chemical bonding and structural development of lanthanum doped lead zirconate titanate (Pb{sub 0.95}La{sub 0.05}Zr{sub 0.54}Ti{sub 0.46}O{sub 3}; referred to PLZT) thin films prepared using chemical solution deposition method. Atomic force microscopy demonstrates formation of nanocrystallites in the film annealed at T{sub a} = 750 °C. X-ray photoelectron spectroscopy (XPS) analyses indicate that the binding energies (BE) of the Pb 4f, Zr 3d, and Ti 2p doublet experience a positive energy shift at T{sub a} = 750 °C, whereas the BE of O 1s and La 3d doublet show a negative shift with respect to the BE of the films annealed at T{sub a} = 750 °C. Thermal induced crystallization and chemical modification is evident from XPS results. The Ar+ sputtering of the films reveals change in oxidation state and chemical bonding between the constituent atoms, with respect to T{sub a}. Raman spectroscopy used to study phonon-light interactions show shift in longitudinal and transverse optical modes with the change in T{sub a}, confirming the change in phase and crystallinity of these films. The results suggest annealing at T{sub a} = 750 °C yield crystalline perovskite PLZT films, which is essential to obtain photovoltaic response from

  8. Study of grain structure evolution during annealing of a twin-roll-cast Mg alloy

    International Nuclear Information System (INIS)

    Tripathi, A.; Samajdar, I.; Nie, J.F.; Tewari, A.

    2016-01-01

    The evolution of microstructure under static annealing was studied for mid-thickness section of a twin-roll-cast (TRC) magnesium alloy. Annealing was performed at 300 °C and 500 °C for different times. Microstructural evolution was quantitatively analyzed, from optical micrographs, using grain path envelope analysis. Additional information from electron backscatter diffraction (EBSD) was used for addressing the possible mechanism(s). It was found that the TRC structure had a bimodal grain size, which was preserved even after annealing at 300 °C. However, the annealing at 500 °C led to a unimodal grain size. This difference in the grain size distribution created a contrasting behavior in the normalized standard deviations. This was primarily attributed to a competition between recovery and recrystallization, and their respective dominance at 300° and 500 °C. A deformation induced recrystallization recovery (DIRR) model was proposed. The proposed model could successfully address the experimental microstructural evolution. - Highlights: • Annealing of twin roll cast (TRC) magnesium alloy was done at temperatures of 300 °C and 500 °C. • TRC had bimodal structure. Bimodality preserved for annealing at 300 °C. Annealing at 500 °C led to unimodal structure. • Grain evolution was described based on the competition between recovery and recrystallization. • Deformation induced recrystallization recovery (DIRR) mechanistic model was developed.

  9. Loviisa Unit One: Annealing - healing

    Energy Technology Data Exchange (ETDEWEB)

    Kohopaeae, J.; Virsu, R. [ed.; Henriksson, A. [ed.

    1997-11-01

    Unit 1 of the Loviisa nuclear powerplant was annealed in connection with the refuelling outage in the summer of 1996. This type of heat treatment restored the toughness properties of the pressure vessel weld, which had been embrittled be neutron radiation, so that it is almost equivalent to a new weld. The treatment itself was an ordinary metallurgical procedure that took only a few days. But the material studies that preceded it began over fifteen years ago and have put IVO at the forefront of world-wide expertise in the area of radiation embrittlement

  10. Sensitivity enhancement using annealed polymer optical fibre based sensors for pressure sensing applications

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A. F.; Saez-Rodriguez, D.

    2016-01-01

    for that investigation was an unexpected behaviour observed in an array of sensors which were used for liquid level monitoring. One sensor exhibited much lower pressure sensitivity and that was the only one that was not annealed. To further investigate the phenomenon, additional sensors were photo...... sensitivity of the devices. This can provide better performing sensors for use in stress, force and pressure sensing applications.......Thermal annealing can be used to induce a permanent negative Bragg wavelength shift for polymer fibre grating sensors and it was originally used for multiplexing purposes. Recently, researchers showed that annealing can also provide additional benefits, such as strain and humidity sensitivity...

  11. Electric field effects on radiation defects annealing in p-InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1983-01-01

    Annealing experiments have been performed on electron irradiated Schottky diodes on p-InP. They show a strong influence of the applied reverse bias during annealing on the recovery of the free holes concentration, as well as on the disappearance of the dominant radiation induced hole traps detected by deep level transient spectroscopy (DLTS). Compensating defects are observed to drift under the action of the electric field and accumulate at the edge of the depleted zone, while the main hole traps created by the irradiation anneal faster when empty of holes or subjected to an electric field. (author)

  12. Simulated annealing with constant thermodynamic speed

    International Nuclear Information System (INIS)

    Salamon, P.; Ruppeiner, G.; Liao, L.; Pedersen, J.

    1987-01-01

    Arguments are presented to the effect that the optimal annealing schedule for simulated annealing proceeds with constant thermodynamic speed, i.e., with dT/dt = -(v T)/(ε-√C), where T is the temperature, ε- is the relaxation time, C ist the heat capacity, t is the time, and v is the thermodynamic speed. Experimental results consistent with this conjecture are presented from simulated annealing on graph partitioning problems. (orig.)

  13. Temperature Scaling Law for Quantum Annealing Optimizers.

    Science.gov (United States)

    Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

    2017-09-15

    Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

  14. Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

    International Nuclear Information System (INIS)

    Chen, Bin; Tang, Kun; Gu, Shulin; Ye, Jiandong; Huang, Shimin; Gu, Ran; Zhang, Yang; Yao, Zhengrong; Zhu, Shunming; Zheng, Youdou

    2014-01-01

    Highlights: • To avoid the forming of Co clusters and explore the origin of the magnetism, detailed investigation on the properties of the Co-implanted ZnO films with a rather low dose of 8 × 10 15 cm −2 and high implantation energy of 1 MeV were carried out. • The crystalline structure of the damaged region caused by ion-implantation has been recovered via the thermal annealing treatment at the temperature of 900 °C and above. • The low temperature magnetic hysteresis loops have indicated paramagnetism for the annealed films with weak ferromagnetic characteristics. • The zero-field cooling (ZFC) magnetization curves of the Co-implanted ZnO samples have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C. - Abstract: The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0 0 0 1) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 °C and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co 2+ ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects

  15. Evolution of mechanical properties of ultrafine grained 1050 alloy annealing with electric current

    International Nuclear Information System (INIS)

    Cao, Yiheng; He, Lizi; Zhang, Lin; Zhou, Yizhou; Wang, Ping; Cui, Jianzhong

    2016-01-01

    The tensile properties and microstructures of 1050 aluminum alloy prepared by equal channel angular pressing at cryogenic temperature (cryoECAP) after electric current annealing at 90–210 °C for 3 h were investigated by tensile test, electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM). An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C, due to a significant decrease in the density of mobile dislocations after annealing, and thus a higher yield stress is required to nucleate alternative dislocation sources during tensile test. The electric current can enhance the motion of dislocations, lead to a lower dislocation density at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. Moreover, the electric current can promote the migration of grain boundaries at 150–210 °C, result in a larger grain size at 150 °C and 210 °C, and thus causes a lower yield stress. The sample annealed with electric current has a lower uniform elongation at 90–120 °C, and the deviation in the uniform elongation between samples annealed without and with electric current becomes smaller at 150–210 °C. - Highlights: • An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C. • The d. c. current can enhance the motion of dislocations at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. • The d. c. current can promote the grain growth at 150–210 °C, and thus cause a lower yield stress. • The DC annealed sample has a lower uniform elongation at 90–120 °C.

  16. GPU accelerated population annealing algorithm

    Science.gov (United States)

    Barash, Lev Yu.; Weigel, Martin; Borovský, Michal; Janke, Wolfhard; Shchur, Lev N.

    2017-11-01

    Population annealing is a promising recent approach for Monte Carlo simulations in statistical physics, in particular for the simulation of systems with complex free-energy landscapes. It is a hybrid method, combining importance sampling through Markov chains with elements of sequential Monte Carlo in the form of population control. While it appears to provide algorithmic capabilities for the simulation of such systems that are roughly comparable to those of more established approaches such as parallel tempering, it is intrinsically much more suitable for massively parallel computing. Here, we tap into this structural advantage and present a highly optimized implementation of the population annealing algorithm on GPUs that promises speed-ups of several orders of magnitude as compared to a serial implementation on CPUs. While the sample code is for simulations of the 2D ferromagnetic Ising model, it should be easily adapted for simulations of other spin models, including disordered systems. Our code includes implementations of some advanced algorithmic features that have only recently been suggested, namely the automatic adaptation of temperature steps and a multi-histogram analysis of the data at different temperatures. Program Files doi:http://dx.doi.org/10.17632/sgzt4b7b3m.1 Licensing provisions: Creative Commons Attribution license (CC BY 4.0) Programming language: C, CUDA External routines/libraries: NVIDIA CUDA Toolkit 6.5 or newer Nature of problem: The program calculates the internal energy, specific heat, several magnetization moments, entropy and free energy of the 2D Ising model on square lattices of edge length L with periodic boundary conditions as a function of inverse temperature β. Solution method: The code uses population annealing, a hybrid method combining Markov chain updates with population control. The code is implemented for NVIDIA GPUs using the CUDA language and employs advanced techniques such as multi-spin coding, adaptive temperature

  17. Electron backscatter and X-ray diffraction studies on the deformation and annealing textures of austenitic stainless steel 310S

    Energy Technology Data Exchange (ETDEWEB)

    Nezakat, Majid, E-mail: majid.nezakat@usask.ca [Canadian Light Source Inc., 44 Innovation Boulevard, Saskatoon, SK, S7N 2V3 (Canada); Akhiani, Hamed [Westpower Equipment Ltd., 4451 54 Avenue South East, Calgary, AB T2C 2A2 (Canada); Sabet, Seyed Morteza [Department of Ocean and Mechanical Engineering, Florida Atlantic University, Boca Raton, FL 33431 (United States); Szpunar, Jerzy [Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK, S7N 5A9 (Canada)

    2017-01-15

    We studied the texture evolution of thermo-mechanically processed austenitic stainless steel 310S. This alloy was cold rolled up to 90% reduction in thickness and subsequently annealed at 1050 °C. At the early stages of deformation, strain-induced martensite was formed from deformed austenite. By increasing the deformation level, slip mechanism was found to be insufficient to accommodate higher deformation strains. Our results demonstrated that twinning is the dominant deformation mechanism at higher deformation levels. Results also showed that cold rolling in unidirectional and cross rolling modes results in Goss/Brass and Brass dominant textures in deformed samples, respectively. Similar texture components are observed after annealing. Thus, the annealing texture was greatly affected by texture of the deformed parent phase and martensite did not contribute as it showed an athermal reversion during annealing. Results also showed that when the fraction of martensite exceeds a critical point, its grain boundaries impeded the movement of austenite grain boundaries during annealing. As a result, recrystallization incubation time would increase. This caused an incomplete recrystallization of highly deformed samples, which led to a rational drop in the intensity of the texture components. - Highlights: •Thermo-mechanical processing through different cold rolling modes can induce different textures. •Martensite reversion is athermal during annealing. •Higher fraction of deformation-induced martensite can increase the annealing time required for complete recrystallization. •Annealing texture is mainly influenced by the deformation texture of austenite.

  18. Effect of thermal annealing on property changes of neutron-irradiated non-graphitized carbon materials and nuclear graphite

    International Nuclear Information System (INIS)

    Matsuo, Hideto

    1991-06-01

    Changes in dimension of non-graphitized carbon materials and nuclear graphite, and the bulk density, electrical resistivity, Young's modulus and thermal expansivity of nuclear graphite were studied after neutron irradiation at 1128-1483 K and the successive thermal annealing up to 2573 K. Carbon materials showed larger and anisotropic dimensional shrinkage than that of nuclear graphite after the irradiation. The irradiation-induced dimensional shrinkage of carbon materials decreased during annealing at temperatures from 1773 to 2023 K, followed by a slight increase at higher temperatures. On the other hand, the irradiated nuclear graphite hardly showed the changes in length, density and thermal expansivity under the thermal annealing, but the electrical resistivity and Young's modulus showed a gradual decrease with annealing temperature. It has been clarified that there exists significant difference in the effect of thermal annealing on irradiation-induced dimensional shrinkage between graphitized nuclear graphite and non-graphitized carbon materials. (author)

  19. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Narayan, J.; Young, R.T.

    1978-11-01

    The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

  20. Modernizing quantum annealing using local searches

    International Nuclear Information System (INIS)

    Chancellor, Nicholas

    2017-01-01

    I describe how real quantum annealers may be used to perform local (in state space) searches around specified states, rather than the global searches traditionally implemented in the quantum annealing algorithm (QAA). Such protocols will have numerous advantages over simple quantum annealing. By using such searches the effect of problem mis-specification can be reduced, as only energy differences between the searched states will be relevant. The QAA is an analogue of simulated annealing, a classical numerical technique which has now been superseded. Hence, I explore two strategies to use an annealer in a way which takes advantage of modern classical optimization algorithms. Specifically, I show how sequential calls to quantum annealers can be used to construct analogues of population annealing and parallel tempering which use quantum searches as subroutines. The techniques given here can be applied not only to optimization, but also to sampling. I examine the feasibility of these protocols on real devices and note that implementing such protocols should require minimal if any change to the current design of the flux qubit-based annealers by D-Wave Systems Inc. I further provide proof-of-principle numerical experiments based on quantum Monte Carlo that demonstrate simple examples of the discussed techniques. (paper)

  1. Annealed star-branched polyelectrolytes in solution

    NARCIS (Netherlands)

    Klein Wolterink, J.; Male, van J.; Cohen Stuart, M.A.; Koopal, L.K.; Zhulina, E.B.; Borisov, O.V.

    2002-01-01

    Equilibrium conformations of annealed star-branched polyelectrolytes (polyacids) are calculated with a numerical self-consistent-field (SCF) model. From the calculations we obtain also the size and charge of annealed polyelectrolyte stars as a function of the number of arms, pH, and the ionic

  2. Solvent Annealing Induced Perpendicular Orientation of Cylindrical Microdomains in Polystyrene-b-poly(4-hydroxyl styrene)/PEG Oligomer Blend Thin Film Made by Spin-coating from Selective Solvent

    Energy Technology Data Exchange (ETDEWEB)

    Matsutani, Taito; Yamamoto, Katsuhiro, E-mail: yamamoto.katsuhiro@nitech.ac.jp [Department of Materials Science and Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2011-01-01

    The microphase separated structure of PS-b-PHS/PEG blend thin film with thickness of 500 {approx} 600 nm was investigated by grazing incidence small angle X-ray scattering. The thin film was obtained by two different solutions; one was THF which was common good solvent for all components of polymers used here. The other is toluene which was selective solvent for PS and poor-solvent for PHS and PEG. The equilibrium morphology of the block copolymer and blend sample was hexagonally packed cylinder in the bulk and thin film. The structure in the thin film obtained by spin cast from toluene solution was non-equilibrium. After THF vopar annealing of the thin film (cast from toluene), the highly ordered and perpendicular oriented cylindrical structure was obtained. Perpendicular orientation was failure when the thin film sample made by spin cast from THF solution and subsequent THF vapor annealing. The perpendicular nano-holes were fabricated after removing PEG oligomer by washing with water.

  3. Annealing effects of carbon fiber-reinforced epoxy resin composites irradiated by electron beams

    International Nuclear Information System (INIS)

    Udagawa, Akira; Sasuga, Tuneo; Ito, Hiroshi; Hagiwara, Miyuki

    1987-01-01

    Carbon cloth-reinforced epoxy resin composites were irradiated with 2 MeV electrons at room temperature and then annealed in air for 2 h at temperatures up to 180 deg C. A considerable decrease in the three-point bending strength occurred when the irradiated composites were annealed in the temperature range of 115 - 135 deg C which is below the glass transition temperature T g of the matrix resin, while the bending strength remained unchanged up to 180 deg C for the unirradiated composites. In the dynamic viscoelastic spectra of the irradiated matrix, a new relaxation appeared at the temperature extending from 50 deg C to just below the matrix T g and disappeared on annealing for 2 h at 135 deg C. Annealing also decreased the concentration of free radicals existing stably in the irradiated matrix at room temperature. After annealing, a large amount of clacks and voids were observed in the fractography of the composites by scanning electron microscopy. These results indicate: (1) Annealing brings about rearrangement of the radiation-induced molecular chain scission in the matrix; (2) The bending strength of the irradiated composites decreased owing to the increased brittleness of the matrix by annealing. (author)

  4. Effects of annealing on the physical properties of therapeutic proteins during freeze drying process.

    Science.gov (United States)

    Lim, Jun Yeul; Lim, Dae Gon; Kim, Ki Hyun; Park, Sang-Koo; Jeong, Seong Hoon

    2018-02-01

    Effects of annealing steps during the freeze drying process on etanercept, model protein, were evaluated using various analytical methods. The annealing was introduced in three different ways depending on time and temperature. Residual water contents of dried cakes varied from 2.91% to 6.39% and decreased when the annealing step was adopted, suggesting that they are directly affected by the freeze drying methods Moreover, the samples were more homogenous when annealing was adopted. Transition temperatures of the excipients (sucrose, mannitol, and glycine) were dependent on the freeze drying steps. Size exclusion chromatography showed that monomer contents were high when annealing was adopted and also they decreased less after thermal storage at 60°C. Dynamic light scattering results exhibited that annealing can be helpful in inhibiting aggregation and that thermal storage of freeze-dried samples preferably induced fragmentation over aggregation. Shift of circular dichroism spectrum and of the contents of etanercept secondary structure was observed with different freeze drying steps and thermal storage conditions. All analytical results suggest that the physicochemical properties of etanercept formulation can differ in response to different freeze drying steps and that annealing is beneficial for maintaining stability of protein and reducing the time of freeze drying process. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  6. a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Lopez, M., E-mail: marlonrl@yahoo.com.mx [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Orduna-Diaz, A.; Delgado-Macuil, R.; Gayou, V.L.; Bibbins-Martinez, M. [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Torres-Jacome, A.; Trevino-Palacios, C.G. [INAOE, Tonantzintla, Puebla, Pue. 72000 (Mexico)

    2010-10-25

    We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 deg. C for up to 14 h. The annealed amorphous films were analyzed using atomic force microscopy, Raman and FTIR spectroscopy. Films deposited on glass substrate experienced an amorphous-crystalline phase transition after annealing because of the metal-induced crystallization effect, reaching approximately 70% conversion after 14 h of annealing. An absorption frequency of the TO-phonon mode that varies systematically with the substoichiometry of the silicon oxide in the 1046-1170 cm{sup -1} region was observed, revealing the reactivity of the film with the annealing time. For similar annealing time, films deposited on mono-crystalline silicon substrate remained mainly amorphous with minimal Si-crystalline formation. Therefore, the crystalline formations and the shape of the films surfaces depends on the annealing time as well as on the substrate employed during the deposition process of the a-Si:H film.

  7. Microstructural evolution and pitting resistance of annealed lean duplex stainless steel UNS S32304

    International Nuclear Information System (INIS)

    Zhang Ziying; Han Dong; Jiang Yiming; Shi Chong; Li Jin

    2012-01-01

    Highlights: ► The relationship between pitting corrosion resistance and annealing temperature for UNS S32304 was systemically studied. ► The specimens annealed at 1080 °C for 1 h, quenched in water exhibit the best pitting corrosion resistance. ► The relationship between microstructural evolution and pitting resistance of annealed UNS S32304 was discussed in detail. ► The pitting corrosion resistance is consistent with pitting resistance equivalent number of weaker phase for UNS S32304 alloy. - Abstract: The effect of annealing temperature in the range from 1000 to 1200 °C on the pitting corrosion behavior of duplex stainless steel UNS S32304 was investigated by the potentiodynamic polarization and potentiostatic critical pitting temperature techniques. The microstructural evolution and pit morphologies were studied using a scanning electron microscopy with energy dispersive X-ray spectroscopy. The results demonstrated that the nucleation of metastable pits transformed from austenite phase to ferrite phase with the increasing annealing temperature. As the annealing temperature increased, the pitting corrosion resistance firstly increased and then decreased. The highest pitting corrosion resistance was obtained at 1080 °C with the highest critical pitting temperature value and pitting nucleation resistance. The results could be well explained by the microstructural evolution of ferrite and austenite phases induced by annealing treatment.

  8. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    International Nuclear Information System (INIS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-01-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

  9. Irradiation, annealing, and reirradiation research in the ORNL heavy-section steel irradiation program

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; McCabe, D.E.; Sokolov, M.A.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results from work performed as part of the Heavy-Section Steel Irradiation (HSSI) Program managed by Oak Ridge National Laboratory (ORNL) for the U.S. Nuclear Regulatory Commission. The HSSI Program focuses on annealing and re-embrittlement response of materials which are representative of those in commercial RPVs and which are considered to be radiation-sensitive. Experimental studies include (1) the annealing of materials in the existing inventory of previously irradiated materials, (2) reirradiation of previously irradiated/annealed materials in a collaborative program with the University of California, Santa Barbara (UCSB), (3) irradiation/annealing/reirradiation of U.S. and Russian materials in a cooperative program with the Russian Research Center-Kurchatov Institute (RRC-KI), (4) the design and fabrication of an irradiation/anneal/reirradiation capsule and facility for operation at the University of Michigan Ford Reactor, (5) the investigation of potential for irradiation-and/or thermal-induced temper embrittlement in heat-affected zones (HAZs) of RPV steels due to phosphorous segregation at grain boundaries, and (6) investigation of the relationship between Charpy impact toughness and fracture toughness under all conditions of irradiation, annealing, and reirradiation

  10. Radiation annealing of gallium arsenide implanted with sulphur

    CERN Document Server

    Ardyshev, V M

    2002-01-01

    Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

  11. Luminescence sensitivity changes in quartz as a result of annealing

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Agersnap Larsen, N.; Mejdahl, V.

    1995-01-01

    archaeological samples show very different OSL sensitivities. In this paper we report on studies of the effect of high temperature annealing on the OSL and phototransferred TL (PTTL) signals from sedimentary and synthetic quartz. A dramatic enhancement of both OSL and PTTL sensitivity was found especially...... in the temperature range 500-800 degrees C. Computer simulations of the possible effects are shown to produce data that agree in all essential details with the experimental observations. It is further demonstrated that the enhanced OSL sensitivity as a function of annealing temperature is not a pre-dose effect....... of magnitude less per unit radiation than that for heated material. The reason these temperature-induced sensitivity changes occur in quartz is presently not well understood. This phenomenon is also seen in the related area of luminescence dating in which sedimentary quartz and quartz from heated...

  12. Understanding the microwave annealing of silicon

    Directory of Open Access Journals (Sweden)

    Chaochao Fu

    2017-03-01

    Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

  13. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  14. The Legal Framework Of Human Rights Crime As An Extraordinary Crime

    Directory of Open Access Journals (Sweden)

    Dedy Siswadi

    2015-08-01

    Full Text Available Abstract This research reviews the legal framework of human rights crime as an extraordinary crime as an approach in the settlement of criminal cases. The outcomes of the research indicate that modern human rights law developed out of customs and theories that established the rights of the individual in relation to the state. Disagreements regarding human rights violations which can only be done by the state and its agents or can also be done by non-government units still exist at the moment. As it turns out in practice however it has certain weaknesses particularly in legislation concerning serious crimes of human rights both as ius constituendum and ius constitutum still needs to be improved especially in the implementation of human rights on judiciary system. Therefore serious crimes against human rights are included as an extraordinary crime. The handling of the cases was incredible and special has become a logical consequence to be included as an extraordinary crime.

  15. Extraordinary Appeal´S General Repercussion and Third Parties in the Constitutional Jurisdiction

    Directory of Open Access Journals (Sweden)

    Edilene Lôbo

    2016-06-01

    Full Text Available General repercussion, aiming to fight excess of extraordinary appeals and unifying jurisprudence through serial rulings, reveals an essential technique to make collective rights feasible. However, recent procedural legislation gave powers to decide on the matter (exercising the admissibility appraisal of the extraordinary appeal to the lower courts, taking it from the Brazilian Supreme Court, at the same time only accepting organizations as thirdparties. This situation goes against the Democratic Constitutional Procedure paradigm, signaling this work´s goal: to redesign the situation starting from the Open Society of Interpreters theory and from the legal procedure as a theory of the democratic ruling.

  16. Sixteen-state magnetic memory based on the extraordinary Hall effect

    International Nuclear Information System (INIS)

    Segal, A.; Karpovski, M.; Gerber, A.

    2012-01-01

    We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells. - Highlights: ► We propose a novel structure of multi-bit magnetic random access memory. ► Each cell contains several interconnected storage dots. ► Extraordinary Hall effect is used for reading the data. ► Four-, eight- and sixteen-state cells have been realized.

  17. Assessment of the recovery annealing efficiency for VVER-1000 materials' structure reset and lifetime extension

    International Nuclear Information System (INIS)

    Gurovich, B.; Kuleshova, E.; Prikhodko, K.; Fedotova, S.

    2011-01-01

    The results of the VVER-1000 reactor pressure vessels welds studies based on the surveillance specimens sets have revealed a high embrittlement rate of steel with high nickel content compared with predicted embrittlement determined from the Russian Guide. For these critical vessels further safe operation (even during design service life) is not allowed without additional measures (recovery annealing of the VVER-1000 welds as earlier for VVER- 440). The reason is that the rate of high nickel VVER-1000 welds embrittlement is significantly higher than that is for base metal. In order to solve a problem of VVER-1000 lifetime extension recovery annealing validation and accelerated reirradiation of specimens for prolonged operation period estimation after annealing were necessary. In this work comparison of electron-microscopy fine structure studies and fractographic studies of Charpy specimens fracture surface of the VVER-1000 high nickel welds in different states were carried out. It allows estimation of the recovery annealing effect on steels structure and its behavior at further operation. It is shown that both secondary and primary irradiation causes alike radiation-induced fine structure changes: dislocation loops and nano-size precipitates. Recovery annealing leads to full dislocation loops dissolution and significant nano-size precipitates solution but not to the initial values. The rate of radiation defects and radiation-induced precipitates accumulation at reirradiation weld after recovery annealing is lower than at primary irradiation and determine the lower secondary embrittlement rate of VVER-1000 weld. (authors)

  18. Post annealing performance evaluation of printable interdigital capacitive sensors by principal component analysis

    KAUST Repository

    Zia, Asif Iqbal

    2015-06-01

    The surface roughness of thin-film gold electrodes induces instability in impedance spectroscopy measurements of capacitive interdigital printable sensors. Post-fabrication thermodynamic annealing was carried out at temperatures ranging from 30 °C to 210 °C in a vacuum oven and the variation in surface morphology of thin-film gold electrodes was observed by scanning electron microscopy. Impedance spectra obtained at different temperatures were translated into equivalent circuit models by applying complex nonlinear least square curve-fitting algorithm. Principal component analysis was applied to deduce the classification of the parameters affected due to the annealing process and to evaluate the performance stability using mathematical model. Physics of the thermodynamic annealing was discussed based on the surface activation energies. The post anneal testing of the sensors validated the achieved stability in impedance measurement. © 2001-2012 IEEE.

  19. cw argon laser annealing of anodic oxide on GaAs

    International Nuclear Information System (INIS)

    Chakravarti, S.N.; Das, P.; Webster, R.T.; Bhat, K.N.

    1981-01-01

    Anodic oxide films (850 +- 50 A thick) grown on n + (100) bulk GaAs were subjected to selective area annealing using a cw argon laser operating at an output power of 1.2 W. Capacitance-voltage (C-V) measurements performed on Al-anodic oxide-GaAs MOS capacitor structures show that laser-annealed capacitor dots have greatly reduced field-induced hysteresis effects in their capacitance-voltage characteristics compared to the unannealed ones. The oxide leakage current also shows a significant improvement: the leakage current magnitude of MOS capacitors in laser-annealed oxide island is over four orders of magnitude less than the oxide region which was not exposed to the laser radiation. Dielectric breakdown measurement indicates that laser-annealed capacitors have considerably higher breakdown voltages, about a factor of 2 higher than the unannealed capacitors

  20. irradiation growth in annealed Zr2.5wt%Nb at 3530K

    International Nuclear Information System (INIS)

    Rogerson, A.; Murgatroyd, R.A.

    1978-10-01

    Zr 2.5wt%Nb growth specimens have been irradiated at 353 0 K to a fast neutron dose of approximately 4.0 x 10 25 n/m 2 . Specimens were taken from the longitudinal and transverse directions of a nominally annealed, seam-welded tube and irradiated in both the stress relieved and fully annealed conditions. Growth in these specimens is characterised by large positive and negative strains in the longitudinal and transverse directions respectively, with dimensional changes in weld material exhibiting intermediate growth behaviour. The results are compared with growth data on both annealed and cold worked Zircaloy-2 at 353 0 K and discussed in terms of the effect of texture, grain size, and cold work on irradiation growth. It is concluded that the continuation of growth to high doses in annealed Zr-2.5wt%Nb at 353 0 K results from interstitial induced dislocation climb with vacancies diffusing to grain boundaries. (author)

  1. Solid-state microwave annealing of ion-implanted 4H-SiC

    International Nuclear Information System (INIS)

    Sundaresan, Siddarth G.; Tian, Yong-lai; Ridgway, Mark C.; Mahadik, Nadeemullah A.; Qadri, Syed B.; Rao, Mulpuri V.

    2007-01-01

    Solid-state microwave annealing was performed at temperatures up to 2120 deg, C for 30 s on ion-implanted 4H-SiC in N 2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 deg, C is 2.65 nm for 10 μm x 10 μm atomic force microscopy scans. The sheet resistances measured on Al + - and P + -implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites

  2. Post annealing performance evaluation of printable interdigital capacitive sensors by principal component analysis

    KAUST Repository

    Zia, Asif Iqbal; Mukhopadhyay, Subhas Chandra; Yu, Paklam; Al-Bahadly, Ibrahim H.; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

    2015-01-01

    The surface roughness of thin-film gold electrodes induces instability in impedance spectroscopy measurements of capacitive interdigital printable sensors. Post-fabrication thermodynamic annealing was carried out at temperatures ranging from 30 °C to 210 °C in a vacuum oven and the variation in surface morphology of thin-film gold electrodes was observed by scanning electron microscopy. Impedance spectra obtained at different temperatures were translated into equivalent circuit models by applying complex nonlinear least square curve-fitting algorithm. Principal component analysis was applied to deduce the classification of the parameters affected due to the annealing process and to evaluate the performance stability using mathematical model. Physics of the thermodynamic annealing was discussed based on the surface activation energies. The post anneal testing of the sensors validated the achieved stability in impedance measurement. © 2001-2012 IEEE.

  3. Cylinder packing by simulated annealing

    Directory of Open Access Journals (Sweden)

    M. Helena Correia

    2000-12-01

    Full Text Available This paper is motivated by the problem of loading identical items of circular base (tubes, rolls, ... into a rectangular base (the pallet. For practical reasons, all the loaded items are considered to have the same height. The resolution of this problem consists in determining the positioning pattern of the circular bases of the items on the rectangular pallet, while maximizing the number of items. This pattern will be repeated for each layer stacked on the pallet. Two algorithms based on the meta-heuristic Simulated Annealing have been developed and implemented. The tuning of these algorithms parameters implied running intensive tests in order to improve its efficiency. The algorithms developed were easily extended to the case of non-identical circles.Este artigo aborda o problema de posicionamento de objetos de base circular (tubos, rolos, ... sobre uma base retangular de maiores dimensões. Por razões práticas, considera-se que todos os objetos a carregar apresentam a mesma altura. A resolução do problema consiste na determinação do padrão de posicionamento das bases circulares dos referidos objetos sobre a base de forma retangular, tendo como objetivo a maximização do número de objetos estritamente posicionados no interior dessa base. Este padrão de posicionamento será repetido em cada uma das camadas a carregar sobre a base retangular. Apresentam-se dois algoritmos para a resolução do problema. Estes algoritmos baseiam-se numa meta-heurística, Simulated Annealling, cuja afinação de parâmetros requereu a execução de testes intensivos com o objetivo de atingir um elevado grau de eficiência no seu desempenho. As características dos algoritmos implementados permitiram que a sua extensão à consideração de círculos com raios diferentes fosse facilmente conseguida.

  4. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  5. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Prawer, S; Gonon, P; Walker, R; Dooley, S; Bettiol, A; Pearce, J [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  6. Nuclear techniques of analysis in diamond synthesis and annealing

    International Nuclear Information System (INIS)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J.

    1996-01-01

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs

  7. Structural transformation of implanted diamond layers during high temperature annealing

    International Nuclear Information System (INIS)

    Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-01-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  8. Extraordinary Hall effect in Co implanted GaAs hybrid magnetic semiconductors

    International Nuclear Information System (INIS)

    Honda, S.; Tateishi, K.; Nawate, M.; Sakamoto, I.

    2004-01-01

    Hybrid Co/GaAs ferromagnetic semiconductors have been prepared by implantation method. In these samples, sheet resistance shows weak temperature dependence, and the extraordinary Hall effect with positive coefficient is observed. In small Co content samples, Hall resistance increases with decreasing temperature and maximum value of 3.6x10 -2 Ω is obtained at 150 K

  9. The right to appeal a judgment of the Extraordinary Chambers in the courts of Cambodia

    NARCIS (Netherlands)

    O'Neill, L.; Sluiter, G.

    2009-01-01

    In early 2007, we submitted a report to the Extraordinary Chambers in the Courts of Cambodia commenting on several aspects of its then-draft Internal Rules, including whether the ECCC’s envisaged appeal system adhered to international standards. The Internal Rules were adopted in June 2007, and then

  10. The psychologist, the psychoanalyst and the 'extraordinary child' in postwar British science fiction.

    Science.gov (United States)

    Tisdall, Laura

    2016-12-01

    A sudden influx of portrayals of 'extraordinary children' emerged in British science fiction after the Second World War. Such children both violated and confirmed the new set of expectations about ordinary childhood that emerged from the findings of developmental psychologists around the same time. Previous work on extraordinary children in both science fiction and horror has tended to confine the phenomenon to an 'evil child boom' within the American filmmaking industry in the 1970s. This article suggests that a much earlier trend is visible in British postwar science fiction texts, analysing a cluster of novels that emerged in the 1950s: Arthur C. Clarke's Childhood's End (1953), William Golding's Lord of the Flies (1954) and John Wyndham's The Midwich Cuckoos (1957). It will be argued that the groups of extraordinary children in these novels both tap into newer child-centred assertions about the threats posed by abnormal childhood, underwritten by psychology and psychoanalysis, and represent a reaction to an older progressive tradition in which children were envisaged as the single hope for a utopian future. This article will ultimately assert that the sudden appearance of extraordinary children in science fiction reflects a profound shift in assessment criteria for healthy childhood in Britain from the 1950s onwards, an issue that had become vitally important in a fledgling social democracy. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/.

  11. 18 CFR 367.4093 - Account 409.3, Income taxes, extraordinary items.

    Science.gov (United States)

    2010-04-01

    ... NATURAL GAS ACT Income Statement Chart of Accounts Service Company Operating Income § 367.4093 Account 409.3, Income taxes, extraordinary items. This account must include the amount of those local, state and... 18 Conservation of Power and Water Resources 1 2010-04-01 2010-04-01 false Account 409.3, Income...

  12. Extraordinary Measures: Drone Warfare, Securitization, and the “War on Terror”

    Directory of Open Access Journals (Sweden)

    Romaniuk Scott Nicholas

    2015-07-01

    Full Text Available The use of unmanned aerial vehicles or “drones,” as part of the United States’ (US targeted killing (TK program dramatically increased after the War on Terror (WoT was declared. With the ambiguous nature and parameters of the WoT, and stemming from the postulation of numerous low-level, niche-, and other securitizations producing a monolithic threat, US drone operations now constitute a vital stitch in the extensive fabric of US counterterrorism policy. This article employs the theories of securitization and macrosecuritization as discussed by Buzan (1991, 2006, and Buzan and Wæver (2009 to understand targeted killing, by means of weaponized drones, as an extraordinary measure according to the Copenhagen School’s interpretation. An overarching securitization and the use of the “security” label warrants the emergency action of targeted killing through the use of drones as an extraordinary measure. We argue that the WoT serves as a means of securitizing global terrorism as a threat significant enough to warrant the use of drone warfare as an extraordinary use of force. By accepting the WoT as a securitization process we can reasonably accept that the US’ response(s against that threat are also securitized and therefore become extraordinary measures.

  13. Extraordinary molecular evolution in the PRDM9 fertility gene.

    Directory of Open Access Journals (Sweden)

    James H Thomas

    2009-12-01

    Full Text Available Recent work indicates that allelic incompatibility in the mouse PRDM9 (Meisetz gene can cause hybrid male sterility, contributing to genetic isolation and potentially speciation. The only phenotype of mouse PRDM9 knockouts is a meiosis I block that causes sterility in both sexes. The PRDM9 gene encodes a protein with histone H3(K4 trimethyltransferase activity, a KRAB domain, and a DNA-binding domain consisting of multiple tandem C2H2 zinc finger (ZF domains. We have analyzed human coding polymorphism and interspecies evolutionary changes in the PRDM9 gene. The ZF domains of PRDM9 are evolving very rapidly, with compelling evidence of positive selection in primates. Positively selected amino acids are predominantly those known to make nucleotide specific contacts in C2H2 zinc fingers. These results suggest that PRDM9 is subject to recurrent selection to change DNA-binding specificity. The human PRDM9 protein is highly polymorphic in its ZF domains and nearly all polymorphisms affect the same nucleotide contact residues that are subject to positive selection. ZF domain nucleotide sequences are strongly homogenized within species, indicating that interfinger recombination contributes to their evolution. PRDM9 has previously been assumed to be a transcription factor required to induce meiosis specific genes, a role that is inconsistent with its molecular evolution. We suggest instead that PRDM9 is involved in some aspect of centromere segregation conflict and that rapidly evolving centromeric DNA drives changes in PRDM9 DNA-binding domains.

  14. Global warming: Temperature estimation in annealers

    Directory of Open Access Journals (Sweden)

    Jack Raymond

    2016-11-01

    Full Text Available Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper we evaluate several methods for determining a useful operational temperature range for annealers. We show that, even where distributions deviate from the Boltzmann distribution due to ergodicity breaking, these estimates can be useful. We introduce the concepts of local and global temperatures that are captured by different estimation methods. We argue that for practical application it often makes sense to analyze annealers that are subject to post-processing in order to isolate the macroscopic distribution deviations that are a practical barrier to their application.

  15. Coherent Coupled Qubits for Quantum Annealing

    Science.gov (United States)

    Weber, Steven J.; Samach, Gabriel O.; Hover, David; Gustavsson, Simon; Kim, David K.; Melville, Alexander; Rosenberg, Danna; Sears, Adam P.; Yan, Fei; Yoder, Jonilyn L.; Oliver, William D.; Kerman, Andrew J.

    2017-07-01

    Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times limited primarily by the use of large persistent currents Ip. Here, we examine an alternative approach using qubits with smaller Ip and longer coherence times. We demonstrate tunable coupling, a basic building block for quantum annealing, between two flux qubits with small (approximately 50-nA) persistent currents. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence.

  16. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  17. Extraordinary sex ratios: cultural effects on ecological consequences.

    Directory of Open Access Journals (Sweden)

    Ferenc Molnár

    Full Text Available We model sex-structured population dynamics to analyze pairwise competition between groups differing both genetically and culturally. A sex-ratio allele is expressed in the heterogametic sex only, so that assumptions of Fisher's analysis do not apply. Sex-ratio evolution drives cultural evolution of a group-associated trait governing mortality in the homogametic sex. The two-sex dynamics under resource limitation induces a strong Allee effect that depends on both sex ratio and cultural trait values. We describe the resulting threshold, separating extinction from positive growth, as a function of female and male densities. When initial conditions avoid extinction due to the Allee effect, different sex ratios cannot coexist; in our model, greater female allocation always invades and excludes a lesser allocation. But the culturally transmitted trait interacts with the sex ratio to determine the ecological consequences of successful invasion. The invading female allocation may permit population persistence at self-regulated equilibrium. For this case, the resident culture may be excluded, or may coexist with the invader culture. That is, a single sex-ratio allele in females and a cultural dimorphism in male mortality can persist; a low-mortality resident trait is maintained by father-to-son cultural transmission. Otherwise, the successfully invading female allocation excludes the resident allele and culture and then drives the population to extinction via a shortage of males. Finally, we show that the results obtained under homogeneous mixing hold, with caveats, in a spatially explicit model with local mating and diffusive dispersal in both sexes.

  18. Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

    Science.gov (United States)

    Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

    2017-09-20

    Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

  19. Structural relaxation in annealed hyperquenched basaltic glasses

    DEFF Research Database (Denmark)

    Guo, Xiaoju; Mauro, John C.; Potuzak, M.

    2012-01-01

    The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

  20. Boosting quantum annealer performance via sample persistence

    Science.gov (United States)

    Karimi, Hamed; Rosenberg, Gili

    2017-07-01

    We propose a novel method for reducing the number of variables in quadratic unconstrained binary optimization problems, using a quantum annealer (or any sampler) to fix the value of a large portion of the variables to values that have a high probability of being optimal. The resulting problems are usually much easier for the quantum annealer to solve, due to their being smaller and consisting of disconnected components. This approach significantly increases the success rate and number of observations of the best known energy value in samples obtained from the quantum annealer, when compared with calling the quantum annealer without using it, even when using fewer annealing cycles. Use of the method results in a considerable improvement in success metrics even for problems with high-precision couplers and biases, which are more challenging for the quantum annealer to solve. The results are further enhanced by applying the method iteratively and combining it with classical pre-processing. We present results for both Chimera graph-structured problems and embedded problems from a real-world application.

  1. Energy Saving in Industrial Annealing Furnaces

    Directory of Open Access Journals (Sweden)

    Fatma ÇANKA KILIÇ

    2018-03-01

    Full Text Available In this study, an energy efficiency studies have been carried out in a natural gas-fired rolling mill annealing furnace of an industrial establishment. In this context, exhaust gas from the furnace has been examined in terms of waste heat potential. In the examinations that have been made in detail; waste heat potential was found as 3.630,31 kW. Technical and feasibility studies have been carried out to realize electricity production through an Organic Rankine Cycle (ORC system for evaluating the waste heat potential of the annealing furnace. It has been calculated that 1.626.378,88 kWh/year of electricity can be generated by using the exhaust gas waste heat of the annealing furnace through an ORC system to produce electric energy with a net efficiency of 16%. The financial value of this energy was determined as 436.032,18 TL/year and the simple repayment period of the investment was 8,12 years. Since the annealing period of the annealing furnace is 2800 hours/year, the investment has not been found to be feasible in terms of the feasibility studies. However, the investment suitability can be assured when the annealing furnace is operating at full capacity for 8,000 hours or more annually.

  2. Analysis of Trivium by a Simulated Annealing variant

    DEFF Research Database (Denmark)

    Borghoff, Julia; Knudsen, Lars Ramkilde; Matusiewicz, Krystian

    2010-01-01

    This paper proposes a new method of solving certain classes of systems of multivariate equations over the binary field and its cryptanalytical applications. We show how heuristic optimization methods such as hill climbing algorithms can be relevant to solving systems of multivariate equations....... A characteristic of equation systems that may be efficiently solvable by the means of such algorithms is provided. As an example, we investigate equation systems induced by the problem of recovering the internal state of the stream cipher Trivium. We propose an improved variant of the simulated annealing method...

  3. Remarkably Enhanced Room-Temperature Hydrogen Sensing of SnO₂ Nanoflowers via Vacuum Annealing Treatment.

    Science.gov (United States)

    Liu, Gao; Wang, Zhao; Chen, Zihui; Yang, Shulin; Fu, Xingxing; Huang, Rui; Li, Xiaokang; Xiong, Juan; Hu, Yongming; Gu, Haoshuang

    2018-03-23

    In this work, SnO₂ nanoflowers synthesized by a hydrothermal method were employed as hydrogen sensing materials. The as-synthesized SnO₂ nanoflowers consisted of cuboid-like SnO₂ nanorods with tetragonal structures. A great increase in the relative content of surface-adsorbed oxygen was observed after the vacuum annealing treatment, and this increase could have been due to the increase in surface oxygen vacancies serving as preferential adsorption sites for oxygen species. Annealing treatment resulted in an 8% increase in the specific surface area of the samples. Moreover, the conductivity of the sensors decreased after the annealing treatment, which should be attributed to the increase in electron scattering around the defects and the compensated donor behavior of the oxygen vacancies due to the surface oxygen adsorption. The hydrogen sensors of the annealed samples, compared to those of the unannealed samples, exhibited a much higher sensitivity and faster response rate. The sensor response factor and response rate increased from 27.1% to 80.2% and 0.34%/s to 1.15%/s, respectively. This remarkable enhancement in sensing performance induced by the annealing treatment could be attributed to the larger specific surface areas and higher amount of surface-adsorbed oxygen, which provides a greater reaction space for hydrogen. Moreover, the sensors with annealed SnO₂ nanoflowers also exhibited high selectivity towards hydrogen against CH₄, CO, and ethanol.

  4. Effect of annealing on the compositional modulation of InAlAsSb

    Energy Technology Data Exchange (ETDEWEB)

    Baladés, N., E-mail: nuria.balades@uca.es [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Sales, D.L.; Herrera, M.; Delgado, F.J. [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); González, M. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Sotera Defense Solutions, 430 National Business Pkwy # 100, Annapolis Junction, MD 20701 (United States); Clark, K.; Pinsunkajana, P. [Intelligent Epitaxy Technology, Inc. Richardson, TX, 75801 (United States); Hoven, N.; Hubbard, S. [Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, NY 14623 (United States); Tomasulo, S.; Walters, J.R. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Molina, S.I. [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain)

    2017-02-15

    Highlights: • A post-growth annealing under As overpressure over 500 °C for several minutes induces a blue-shift in the InAlAsSb emission. • TEM analysis evidences that the small compositional fluctuations of the as-grown samples disappear after being annealed. • Annealing stimulates atomic diffusion of the quaternary, homogenizing their constituents and enhancing structural quality. - Abstract: The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM). This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence (PL) measurements revealed deviations from their predicted bandgap, suggesting non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the new arrangement of layers and the post-growth annealing treatments has been reported. Our results show that the small compositional fluctuations of the as-grown heterostructures disappear after being annealed, and the bandgap energy correspondingly increases towards the predicted value.

  5. Annealing dependent evolution of columnar nanostructures in RF magnetron sputtered PTFE films for hydrophobic applications

    Science.gov (United States)

    Tripathi, S.; De, Rajnarayan; Maidul Haque, S.; Divakar Rao, K.; Misal, J. S.; Prathap, C.; Das, S. C.; Patidar, Manju M.; Ganesan, V.; Sahoo, N. K.

    2018-01-01

    Present communication focuses on a relatively less explored direction of producing rough polytetrafluoroethylene (PTFE) surfaces for possible hydrophobic applications. The experiments were carried out to make rough PTFE films without losing much of the transmission, which is an important factor while designing futuristic solar cell protection covers. After annealing temperature optimization, as grown RF magnetron sputtered PTFE films (prepared at 160 W RF power) were subjected to vacuum annealing at 200 °C for different time durations ranging from 1 to 4 h. The films show morphological evolution exhibiting formation and growth of columnar nanostructures that are responsible for roughening of the films due to annealing induced molecular migration and rearrangement. In agreement with this, qualitative analysis of corresponding x-ray reflectivity data shows modification in film thickness, which may again be attributed to the growth of columns at the expense of the atoms of remaining film molecules. However, the observations reveal that the film annealed at 200 °C for 2 h gives a combination of patterned columnar structures and reasonable transmission of >85% (in 500-1000 nm wavelength range), both of which are deteriorated when the films are annealed either at high temperature beyond 200 °C or for long durations >3 h. In addition, attenuated total reflection-Fourier transform infrared spectroscopy results reveal that the molecular bonds remain intact upon annealing at any temperature within the studied range indicating the stable nature of the films.

  6. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A. K. Nanda, E-mail: aknk27@yahoo.com; Subramanian, B. [ECMS Division, Central Electro Chemical Research Institute, Karaikudi (India); Prasanna, S. [Department of Physics, PSG College of Technology, Coimbatore (India); Jayakumar, S. [Department of Physics, PSG Institute of Technology and Applied Research, Coimbatore (India); Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore (India)

    2015-03-28

    Pure α-Al{sub 2}O{sub 3} exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al{sub 2}O{sub 3} thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source.

  7. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    Science.gov (United States)

    Kumar, A. K. Nanda; Prasanna, S.; Subramanian, B.; Jayakumar, S.; Rao, G. Mohan

    2015-03-01

    Pure α-Al2O3 exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al2O3 thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source.

  8. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Kumar, A. K. Nanda; Subramanian, B.; Prasanna, S.; Jayakumar, S.; Rao, G. Mohan

    2015-01-01

    Pure α-Al 2 O 3 exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al 2 O 3 thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source

  9. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  10. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    International Nuclear Information System (INIS)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-01-01

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  11. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman, E-mail: anis@eee.buet.ac.bd [Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1205 (Bangladesh)

    2016-05-21

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  12. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  13. Influence of Radiation Damage and Isochronal Annealing on the Magnetic Susceptibility of Pu1-xAmx Alloys

    International Nuclear Information System (INIS)

    McCall, Scott K.; Fluss, Michael J.; Chung, Brandon W.; Haire, Richard G.

    2008-01-01

    Results of radiation damage in Pu and Pu 1-x Am x alloys studied with magnetic susceptibility, χ(T), and resistivity are presented. Damage accumulated at low temperatures increases χ(T) for all measured alloys, with the trend generally enhanced as the lattice expands. There is a trend towards saturation observable in the damage induced magnetic susceptibility data. that is not evident in similar damage induced resistivity data taken on the same specimen. A comparison of isochronal annealing curves measured by both resistivity and magnetic susceptibility on a 4.3 at% Ga stabilized δ-Pu specimen show that Stage I annealing, where interstitials begin to move, is largely transparent to the magnetic measurement. This indicates that interstitials have little impact on the damage induced increase in the magnetic susceptibility. The isochronal annealing curves of the Pu 1-x Am x alloys do not show distinct annealing stages as expected for alloys. However, samples near 20% Am concentration show an unexpected increase in magnetization beginning when specimens are annealed to 35 K. This behavior is also reflected in a time dependent increase in the magnetic susceptibility of damaged specimens indicative of first order kinetics. These results suggest there may be a metastable phase induced by radiation damage and annealing in Pu 1-x Am x alloys. (authors)

  14. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  15. Extraordinary lateral beaming of sound from a square-lattice phononic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Xiaoxue; Qiu, Chunyin; He, Hailong; Peng, Shasha; Ke, Manzhu [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Zhengyou, E-mail: zyliu@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Institute for Advanced Studies, Wuhan University, Wuhan 430072 (China)

    2017-03-03

    Highlights: • An extraordinary lateral beaming phenomenon is observed in a finite phononic crystal made of square lattice. • The phenomenon can be explained by the equivalence of the states located around the four corners of the first Brillouin zone. • The lateral beaming behavior enables a simple design of acoustic beam splitters. • In some sense, the phenomenon can be described by a near zero refractive index. - Abstract: This work revisits the sound transmission through a finite phononic crystal of square lattice. In addition to a direct, ordinary transmission through the sample, an extraordinary lateral beaming effect is also observed. The phenomenon stems from the equivalence of the states located around the four corners of the first Brillouin zone. The experimental result agrees well with the theoretical prediction. The lateral beaming behavior enables a simple design for realizing acoustic beam splitters.

  16. Influence of grain size on the extraordinary Hall effect in magnetic granular alloys

    International Nuclear Information System (INIS)

    Granovsky, Alexander B.; Kalitsov, Alan V.; Khanikaev, Alexander B.; Kioussis, Nicholas

    2003-01-01

    A quantum statistical theory of the influence of grain size on the residual extraordinary Hall effect (EHE) in magnetic metal-insulator granular alloys is presented. It is shown that under certain conditions the quasi-classical size-effect (QSE) can lead to similar behaviors of EHE in metal-metal and metal-insulator alloys. The possible dependences of EHE coefficient on the grain size and the role of the QSE in the giant EHE in nanocomposites are discussed

  17. Influence of grain size on the extraordinary Hall effect in magnetic granular alloys

    Energy Technology Data Exchange (ETDEWEB)

    Granovsky, Alexander B. E-mail: granov@magn.ru; Kalitsov, Alan V.; Khanikaev, Alexander B.; Kioussis, Nicholas

    2003-03-01

    A quantum statistical theory of the influence of grain size on the residual extraordinary Hall effect (EHE) in magnetic metal-insulator granular alloys is presented. It is shown that under certain conditions the quasi-classical size-effect (QSE) can lead to similar behaviors of EHE in metal-metal and metal-insulator alloys. The possible dependences of EHE coefficient on the grain size and the role of the QSE in the giant EHE in nanocomposites are discussed.

  18. The Concept of Extraordinary Crime in Indonesia Legal System: is the Concept an Effective Criminal Policy?

    OpenAIRE

    Prahassacitta, Vidya

    2016-01-01

    The concept of extraordinary crime was a common concept in Indonesia. Adopts from the concept of the most serious crime in Rome Statute and adjusted with the Indonesian legal system. Then it developed wider and introduced into terrorism, corruption, drug abuse offenses, and child sexual abuse in legislations and Constitutional Court verdicts. The implementation of this concept generated some consequences in drafting and formulating the legislation as part of penal policy. This leads to two le...

  19. The savant syndrome: an extraordinary condition. A synopsis: past, present, future

    OpenAIRE

    Treffert, Darold A.

    2009-01-01

    Savant syndrome is a rare, but extraordinary, condition in which persons with serious mental disabilities, including autistic disorder, have some ‘island of genius’ which stands in marked, incongruous contrast to overall handicap. As many as one in 10 persons with autistic disorder have such remarkable abilities in varying degrees, although savant syndrome occurs in other developmental disabilities or in other types of central nervous system injury or disease as well. Whatever the particular ...

  20. Electromagnetic response of extraordinary transmission plates inspired on Babinet’s principle

    OpenAIRE

    Navarro Cía, Miguel; Beruete Díaz, Miguel; Sorolla Ayza, Mario

    2011-01-01

    This chapter is devoted to polarization effects arisen from perforated metallic plates exhibiting extraordinary transmission (ET). Setting aside the state-of-the-art of perforated metallic plates, we show that by applying Babinet’s principle, subwavelength hole arrays (SHAs) arranged in rectangular lattice can further enhance its potential polarization response. Different perspectives are brought about to describe and understand the particular behaviour of self-complementarines...

  1. Extraordinary results

    International Nuclear Information System (INIS)

    Cicova, V.

    2012-01-01

    For the first time in the history, Slovenske elektrarne became the first winner in a new category Business and Biodiversity in the competition of European companies aimed at the environment protection. Excellent results were achieved by a long-term co-operation with the Tatras National Park, in particular in saving the endangered animals.

  2. Extraordinary Sportswomen

    DEFF Research Database (Denmark)

    As in many other fields, in sports too, women were latecomers and considered as the ‘other sex’ – at least until the twenty-first century. When sport developed in its modern forms towards the second half of the nineteenth century, women were (and to a certain degree still are) considered too weak......, which strategies did they apply and how did they fight and win their battles against the gender order of their time? The chapters were originally published as a special issue of Sport in Society.......As in many other fields, in sports too, women were latecomers and considered as the ‘other sex’ – at least until the twenty-first century. When sport developed in its modern forms towards the second half of the nineteenth century, women were (and to a certain degree still are) considered too weak...... to participate in strenuous physical activities, and were thus excluded from various sports, competitions and events. Although they gradually gained access to all sports, competitive sport was – and is still today – one of the few areas in modern societies with strict gender segregation: in most sports, men do...

  3. Extraordinary Tales

    Indian Academy of Sciences (India)

    IAS Admin

    are protozoa, plants, fungi and animals. Parasitology refers to the study of ... this parasite infect us if we are optional in its lifecycle? Of course, this aids in the ... unclean fruits and vegetables that might have been contaminated with cat faeces.

  4. Ultrastrong extraordinary transmission and reflection in PT-symmetric Thue-Morse optical waveguide networks.

    Science.gov (United States)

    Wu, Jiaye; Yang, Xiangbo

    2017-10-30

    In this paper, we construct a 1D PT-symmetric Thue-Morse aperiodic optical waveguide network (PTSTMAOWN) and mainly investigate the ultrastrong extraordinary transmission and reflection. We propose an approach to study the photonic modes and solve the problem of calculating photonic modes distributions in aperiodic networks due to the lack of dispersion functions and find that in a PTSTMAOWN there exist more photonic modes and more spontaneous PT-symmetric breaking points, which are quite different from other reported PT-symmetric optical systems. Additionally, we develop a method to sort spontaneous PT-symmetric breaking point zones to seek the strongest extraordinary point and obtain that at this point the strongest extraordinary transmission and reflection arrive at 2.96316 × 10 5 and 1.32761 × 10 5 , respectively, due to the PT-symmetric coupling resonance and the special symmetry pattern of TM networks. These enormous gains are several orders of magnitude larger than the previous results. This optical system may possess potential in designing optical amplifier, optical logic elements in photon computers and ultrasensitive optical switches with ultrahigh monochromatity.

  5. On Not Understanding Extraordinary Language in the Buddhist Tantra of Japan

    Directory of Open Access Journals (Sweden)

    Richard K. Payne

    2017-10-01

    Full Text Available The question motivating this essay is how tantric Buddhist practitioners in Japan understood language such as to believe that mantra, dhāraṇī, and related forms are efficacious. “Extraordinary language” is introduced as a cover term for these several similar language uses found in tantric Buddhist practices in Japan. The essay proceeds to a critical examination of Anglo-American philosophy of language to determine whether the concepts, categories, and concerns of that field can contribute to the analysis and understanding of extraordinary language. However, that philosophy of language does not contribute to this analysis, as it is constrained by its continuing focus on its founding concepts, dating particularly from the work of Frege. Comparing it to Indic thought regarding language reveals a distinct mismatch, further indicating the limiting character of the philosophy of language. The analysis then turns to examine two other explanations of tantric language use found in religious studies literature: magical language and performative language. These also, however, prove to be unhelpful. While the essay is primarily critical, one candidate for future constructive study is historical pragmatics, as suggested by Ronald Davidson. The central place of extraordinary language indicates that Indic reflections on the nature of language informed tantric Buddhist practice in Japan and are not simply cultural baggage.

  6. Effect of chemical ordering annealing on martensitic transformation and superelasticity in polycrystalline Ni–Mn–Ga microwires

    Energy Technology Data Exchange (ETDEWEB)

    Qian, M.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Advanced Composites Centre for Innovation and Science (ACCIS), University of Bristol, Queen’s Building, University Walk, Bristol BS8 1TR (United Kingdom); Zhang, X.X., E-mail: xxzhang@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wei, L.S.; Geng, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Peng, H.X., E-mail: hxpengwork@zju.edu.cn [Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2015-10-05

    Highlights: • Chemical ordering annealing on Ni–Mn–Ga microwires was found to reduce the defect density and internal stress. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to increase the MT temperatures, Curie point and saturation magnetization. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to decrease the SIM stress and improve the superelastic reversibility. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to weaken the temperature dependences of the superelastic stresses. - Abstract: Polycrystalline Ni–Mn–Ga microwires of diameter 30–80 μm were prepared by melt-extraction technique on a large scale. The rapidly solidified microwires exhibit a fairly high ductility and excellent shape memory property. Here, with the aim to reduce the defect density, internal stress and compositional inhomogeneity in the as-extracted microwires, a stepwise chemical ordering annealing heat treatment was carried out and the effect of annealing on martensitic transformation, magnetic properties and superelastic behavior were investigated. The results indicate that annealing increase the transformation temperature and decrease the transformation hysteresis. These are related to composition homogenization, increase of atomic ordering and decrease in internal stress and defects. During mechanical tests, the stress-induced martensite (SIM) formation took place at a much lower stress after annealing treatment. The annealed microwires also demonstrate a lower superelastic hysteresis and a higher recovery rate compared to the as-extracted microwires. The temperature dependence of SIM stress is weaker after annealing, which is related to the enthalpy change (ΔH) and phase transformation temperature change according to the Clausius–Clapeyron relation.

  7. Melting phenomenon and laser annealing in semiconductors

    International Nuclear Information System (INIS)

    Narayan, J.

    1981-03-01

    The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

  8. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  9. Traffic Flow Optimization Using a Quantum Annealer

    Directory of Open Access Journals (Sweden)

    Florian Neukart

    2017-12-01

    Full Text Available Quantum annealing algorithms belong to the class of metaheuristic tools, applicable for solving binary optimization problems. Hardware implementations of quantum annealing, such as the quantum processing units (QPUs produced by D-Wave Systems, have been subject to multiple analyses in research, with the aim of characterizing the technology’s usefulness for optimization and sampling tasks. In this paper, we present a real-world application that uses quantum technologies. Specifically, we show how to map certain parts of a real-world traffic flow optimization problem to be suitable for quantum annealing. We show that time-critical optimization tasks, such as continuous redistribution of position data for cars in dense road networks, are suitable candidates for quantum computing. Due to the limited size and connectivity of current-generation D-Wave QPUs, we use a hybrid quantum and classical approach to solve the traffic flow problem.

  10. Study of the optical properties and the carbonaceous clusters in thermally-annealed CR-39 and Makrofol-E polymer-based solid-state nuclear track detectors

    International Nuclear Information System (INIS)

    El Ghazaly, M.

    2012-01-01

    The induced modifications in the optical properties of CR-39 and Makrofol-E polymer-based solid state nuclear track detectors were investigated after thermal annealing at a temperature of 200 .deg. C for different durations. The optical properties were studied using an UV-visible spectrophotometer. From the UV-visible spectra, the direct and the indirect optical band gaps, Urbach's energies, and the number of carbon atoms in a cluster were determined. The absorbance of CR-39 plastic detector was found to decrease with increasing annealing time while the absorbance of Makrofol-E decreased with increasing annealing time. The width of the tail of localized states in the band gap ΔE was evaluated with the Urbach method. The optical energy band gaps were obtained from the direct and the indirect allowed transitions in K-space. Both of the direct and the indirect band gaps of the annealed CR-39 detector decrease with increasing annealing time while in Makrofol-E, they decreased after an annealing time of 15 minute and then showed no remarkable changes for a prolonged annealing times. Urbach's energy decreased significantly for both CR-39 and Makrofol-E with increasing annealing time. The number of carbon atoms in a cluster increased in the CR-39 detector with increasing annealing time while it decreased with increasing annealing time for Makrofol-E. We may conclude that the CR-39 detector undergoes greater modifications than the Makrofol-E detector upon thermal annealing at 200 .deg. C. In conclusion, the induced modifications in the optical properties of CR-39 and Makrofol-E are correlated with the temperature and the duration of annealing.

  11. Strain of laser annealed silicon surfaces

    Science.gov (United States)

    Nemanich, R. J.; Haneman, D.

    1982-05-01

    High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

  12. Thermal annealing of tilted fiber Bragg gratings

    Science.gov (United States)

    González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

    2016-05-01

    We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

  13. Implantation annealing by scanning electron beam

    International Nuclear Information System (INIS)

    Jaussaud, C.; Biasse, B.; Cartier, A.M.; Bontemps, A.

    1983-11-01

    Samples of ion implanted silicon (BF 2 , 30keV, 10 15 ions x cm -2 ) have been annealed with a multiple scan electron beam, at temperatures ranging from 1000 to 1200 0 C. The curves of sheet resistance versus time show a minimum. Nuclear reaction measurements of the amount of boron remaining after annealing show that the increase in sheet resistance is due to a loss of boron. The increase in junction depths, measured by spreading resistance on bevels is between a few hundred A and 1000 A [fr

  14. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  15. Mechanical annealing in the flow of supercooled metallic liquid

    International Nuclear Information System (INIS)

    Zhang, Meng; Dai, Lan Hong; Liu, Lin

    2014-01-01

    Flow induced structural evolution in a supercooled metallic liquid Vit106a (Zr 58.5 Cu 15.6 Al 10.3 Ni 12.8 Nb 2.8 , at. %) was investigated via uni-axial compression combined with differential scanning calorimeter (DSC). Compression tests at strain rates covering the transition from Newtonian flow to non-Newtonian flow and at the same strain rate 2 × 10 −1 s −1 to different strains were performed at the end of glass transition (T g-end  = 703 K). The relaxation enthalpies measured by DSC indicate that the samples underwent non-Newtonian flow contain more free volume than the thermally annealed sample (703 K, 4 min), while the samples underwent Newtonian flow contain less, namely, the free volume of supercooled metallic liquids increases in non-Newtonian flow, while decreases in Newtonian flow. The oscillated variation of the relaxation enthalpies of the samples deformed at the same strain rate 2 × 10 −1 s −1 to different strains confirms that the decrease of free volume was caused by flow stress, i.e., “mechanical annealing.” Micro-hardness tests were also performed to show a similar structural evolution tendency. Based on the obtained results, the stress-temperature scaling in the glass transition of metallic glasses are supported experimentally, as stress plays a role similar to temperature in the creation and annihilation of free volume. In addition, a widening perspective angle on the glass transition of metallic glasses by exploring the 3-dimensional stress-temperature-enthalpy phase diagram is presented. The implications of the observed mechanical annealing effect on the amorphous structure and the work-hardening mechanism of metallic glasses are elucidated based on atomic level stress model

  16. Irradiation and annealing of p-type silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  17. Phase and structural transformations in VVER-440 RPV base metal after long-term operation and recovery annealing

    Science.gov (United States)

    Kuleshova, E. A.; Gurovich, B. A.; Maltsev, D. A.; Frolov, A. S.; Bukina, Z. V.; Fedotova, S. V.; Saltykov, M. A.; Krikun, E. V.; Erak, D. Yu; Zhurko, D. A.; Safonov, D. V.; Zhuchkov, G. M.

    2018-04-01

    This study was carried out to evaluate the possibility of 1st generation VVER-440 reactors lifetime extension by recovery re-annealing with the respect to base metal (BM). Comprehensive studies of the structure and properties of BM templates (samples cut from the inner surface of the shells in beltline region) of operating VVER-440 reactor (after primary standard recovery annealing 475 °C/150 h and subsequent long-term re-irradiation within reactor pressure vessel (RPV)) were conducted. These templates were also subjected to laboratory re-annealing 475 °C/150 h. TEM, SEM and APT studies of BM after laboratory re-annealing revealed significant recovery of radiation-induced hardening elements (Cu-rich precipitates and dislocation loops). Simultaneously a process of strong phosphorus accumulation at grain boundaries occurs since annealing temperature corresponds to the maximum reversible temper brittleness development. The latter is not observed for VVER-440 weld metal (WM). Comparative assessment of the properties return level for the beltline BM templates after recovery re-annealing 475 °C/150 h showed that it does not reach the one typical for beltline WM after the same annealing.

  18. Understanding the ordering mechanisms of self-assembled nanostructures of block copolymers during zone annealing

    Energy Technology Data Exchange (ETDEWEB)

    Cong, Zhinan; Zhang, Liangshun, E-mail: zhangls@ecust.edu.cn, E-mail: jlin@ecust.edu.cn; Wang, Liquan; Lin, Jiaping, E-mail: zhangls@ecust.edu.cn, E-mail: jlin@ecust.edu.cn [Shanghai Key Laboratory of Advanced Polymeric Materials, State Key Laboratory of Bioreactor Engineering, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237 (China)

    2016-03-21

    A theoretical method based on dynamic version of self-consistent field theory is extended to investigate directed self-assembly behaviors of block copolymers subjected to zone annealing. The ordering mechanisms and orientation modulation of microphase-separated nanostructures of block copolymers are discussed in terms of sweep velocity, wall preference, and Flory-Huggins interaction parameter. The simulated results demonstrate that the long-range ordered nanopatterns are achieved by lowering the sweep velocity of zone annealing due to the incorporation of templated ordering of block copolymers. The surface enrichment by one of the two polymer species induces the orientation modulation of defect-free nanostructures through finely tuning the composition of block copolymers and the preference of walls. Additionally, the Flory-Huggins interaction parameters of block copolymers in the distinct regions are main factors to design the zone annealing process for creating the highly ordered nanostructures with single orientation.

  19. Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

    Directory of Open Access Journals (Sweden)

    Tian Yuan

    2016-01-01

    Full Text Available N-type InGaN/GaN multiple-quantum-wells (MQWs were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD. The crystal quality and optical properties of samples after rapid thermal annealing (RTA at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD and photoluminescence (PL spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.

  20. Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

    International Nuclear Information System (INIS)

    Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

    2000-01-01

    The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

  1. Finite-time thermodynamics and simulated annealing

    International Nuclear Information System (INIS)

    Andresen, B.

    1989-01-01

    When the general, global optimization technique simulated annealing was introduced by Kirkpatrick et al. (1983), this mathematical algorithm was based on an analogy to the statistical mechanical behavior of real physical systems like spin glasses, hence the name. In the intervening span of years the method has proven exceptionally useful for a great variety of extremely complicated problems, notably NP-problems like the travelling salesman, DNA sequencing, and graph partitioning. Only a few highly optimized heuristic algorithms (e.g. Lin, Kernighan 1973) have outperformed simulated annealing on their respective problems (Johnson et al. 1989). Simulated annealing in its current form relies only on the static quantity 'energy' to describe the system, whereas questions of rate, as in the temperature path (annealing schedule, see below), are left to intuition. We extent the connection to physical systems and take over further components from thermodynamics like ensemble, heat capacity, and relaxation time. Finally we refer to finite-time thermodynamics (Andresen, Salomon, Berry 1984) for a dynamical estimate of the optimal temperature path. (orig.)

  2. Intelligent medical image processing by simulated annealing

    International Nuclear Information System (INIS)

    Ohyama, Nagaaki

    1992-01-01

    Image processing is being widely used in the medical field and already has become very important, especially when used for image reconstruction purposes. In this paper, it is shown that image processing can be classified into 4 categories; passive, active, intelligent and visual image processing. These 4 classes are explained at first through the use of several examples. The results show that the passive image processing does not give better results than the others. Intelligent image processing, then, is addressed, and the simulated annealing method is introduced. Due to the flexibility of the simulated annealing, formulated intelligence is shown to be easily introduced in an image reconstruction problem. As a practical example, 3D blood vessel reconstruction from a small number of projections, which is insufficient for conventional method to give good reconstruction, is proposed, and computer simulation clearly shows the effectiveness of simulated annealing method. Prior to the conclusion, medical file systems such as IS and C (Image Save and Carry) is pointed out to have potential for formulating knowledge, which is indispensable for intelligent image processing. This paper concludes by summarizing the advantages of simulated annealing. (author)

  3. In situ annealing of hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  4. Unraveling Quantum Annealers using Classical Hardness

    Science.gov (United States)

    Martin-Mayor, Victor; Hen, Itay

    2015-01-01

    Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealing optimizers that contain hundreds of quantum bits. These optimizers, commonly referred to as ‘D-Wave’ chips, promise to solve practical optimization problems potentially faster than conventional ‘classical’ computers. Attempts to quantify the quantum nature of these chips have been met with both excitement and skepticism but have also brought up numerous fundamental questions pertaining to the distinguishability of experimental quantum annealers from their classical thermal counterparts. Inspired by recent results in spin-glass theory that recognize ‘temperature chaos’ as the underlying mechanism responsible for the computational intractability of hard optimization problems, we devise a general method to quantify the performance of quantum annealers on optimization problems suffering from varying degrees of temperature chaos: A superior performance of quantum annealers over classical algorithms on these may allude to the role that quantum effects play in providing speedup. We utilize our method to experimentally study the D-Wave Two chip on different temperature-chaotic problems and find, surprisingly, that its performance scales unfavorably as compared to several analogous classical algorithms. We detect, quantify and discuss several purely classical effects that possibly mask the quantum behavior of the chip. PMID:26483257

  5. Hardening of niobium alloys at precrystallization annealing

    International Nuclear Information System (INIS)

    Vasil'eva, E.V.; Pustovalov, V.A.

    1989-01-01

    Niobium base alloys were investigated. It is shown that precrystallization annealing of niobium-molybdenum, niobium-vanadium and niobium-zirconium alloys elevates much more sufficiently their resistance to microplastic strains, than to macroplastic strains. Hardening effect differs sufficiently for different alloys. The maximal hardening is observed for niobium-vanadium alloys, the minimal one - for niobium-zirconium alloys

  6. Positron prevacancy effects in pure annealed metals

    International Nuclear Information System (INIS)

    Smedskjaer, L.C.

    1981-06-01

    The low-temperature prevacancy effects sometimes observed with positrons in well-annealed high-purity metals are discussed. It is shown that these effects are not experimental artifacts, but are due to trapping of the positrons. It is suggested that dislocations are responsible for these trapping effects. 46 references, 5 figures

  7. Thin-film designs by simulated annealing

    Science.gov (United States)

    Boudet, T.; Chaton, P.; Herault, L.; Gonon, G.; Jouanet, L.; Keller, P.

    1996-11-01

    With the increasing power of computers, new methods in synthesis of optical multilayer systems have appeared. Among these, the simulated-annealing algorithm has proved its efficiency in several fields of physics. We propose to show its performances in the field of optical multilayer systems through different filter designs.

  8. Thermal annealing in neutron-irradiated tribromobenzenes

    DEFF Research Database (Denmark)

    Siekierska, K.E.; Halpern, A.; Maddock, A. G.

    1968-01-01

    in the crystals was estimated by means of the 1,2-dibromoethylene exchange technique. The results suggest that, as a consequence of nuclear events, quite a number of different reactions occur whereas the principal annealing reaction is a recombination of atomic bromine with a dibromophenyl radical....

  9. Job shop scheduling by simulated annealing

    NARCIS (Netherlands)

    Laarhoven, van P.J.M.; Aarts, E.H.L.; Lenstra, J.K.

    1992-01-01

    We describe an approximation algorithm for the problem of finding the minimum makespan in a job shop. The algorithm is based on simulated annealing, a generalization of the well known iterative improvement approach to combinatorial optimization problems. The generalization involves the acceptance of

  10. Entanglement in a Quantum Annealing Processor

    Science.gov (United States)

    2016-09-07

    x ccjj. The annealing param- eter s is controlled with the global bias ΦxccjjðtÞ (see Appendix A for the mapping between s and Φxccjj and a...macroscopic rf SQUID param- eters : junction critical current Ic, qubit inductance Lq, and qubit capacitance Cq. We calibrate all of these parameters on this

  11. Influence of Intercritical Annealing Temperature on Mechanical ...

    African Journals Online (AJOL)

    The fracture surfaces of the impact test samples were examined using the scanning electron microscope (SEM). Micros structural evolution of the samples was also examined with an optical microscope. The results showed that all the evaluated mechanical properties were improved by intercritical annealing, with the ...

  12. Decorative properties of annealed Ti N coatings

    International Nuclear Information System (INIS)

    Klubovich, V.V.; Rubanik, V.V.; Bagrets, D.A.

    2012-01-01

    The decorative properties of annealed TiN coatings on austenitic stainless steel which were formed by vacuum-arc deposition wen investigated. It was shown the principal possibility to control colour characteristics of TiN films due to heat treatment at different temperature and time that expand their usage as decorative coatings. (authors).

  13. Effect of pre-annealing on NO32- centers in synthetic hydroxyapatite

    International Nuclear Information System (INIS)

    Nosenko, V.V.; Vorona, I.P.; Ishchenko, S.S.; Baran, N.P.; Zatovsky, I.V.; Gorodilova, N.A.; Povarchuk, V.Yu.

    2012-01-01

    Effect of pre-annealing of synthetic hydroxyapatite (HAP) on properties of γ- and UV- induced NO 3 2- centers was studied by electron paramagnetic resonance (EPR). Nitrate-containing hydroxyapatite powders ((N)HAP)) and the powders with an admixture of carbonate and nitrate ions ((C,N)HAP) were annealed in the temperature range T ann = 20 °C − 600 °C before irradiation. It was found that pre-annealing of (N)HAP samples changes the parameters of NO 3 2- centers while no changes took place in (C,N)HAP. Moreover, at the pre-annealing temperatures T ann > 200 °C two new NO 3 2- centers were observed in (N)HAP samples; they are characterized by larger value of A ⊥ (3.67 and 4.41 mT) as compared to the known centers. It was also found that the dependence of NO 3 2- centers amount on T ann is non-monotonous in both types of samples. Presumably this is caused by the escape of water molecules from HAP during the annealing and essential modification of the defect subsystem of HAP.

  14. AFM, XRD and HRTEM Studies of Annealed FePd Thin Films

    International Nuclear Information System (INIS)

    Perzanowski, M.; Zabila, Y.; Polit, A.; Krupinski, M.; Dobrowolska, A.; Marszalek, M.; Morgiel, J.

    2010-01-01

    Ferromagnetic FePd L1 0 ordered alloys are highly expected as forthcoming high-density recording materials, because they reveal a large perpendicular magnetocrystalline anisotropy. The value of the magnetic anisotropy of FePd alloy strongly depends on the alloy composition, degree of alloy order as well as on the crystallographic grain orientation. In particular, to obtain the perpendicular anisotropy, it is necessary to get the films with (001) texture. One of the successful methods, which allows one to obtain highly ordered alloy, is a subsequent deposition of Fe and Pd layers, followed by an annealing at high temperature. This paper presents the study of the FePd thin alloy film structure changing in the result of high temperature annealing. During the annealing in high vacuum, the measurements of electrical resistance were performed, indicating the regions of different structure evolution. Changes in the crystal structure and surface morphology induced by thermal treatment were investigated by X-ray diffraction, atomic force microscopy, as well as high resolution transmission electron microscopy and then compared with electrical resistivity measurement. The slow thermal annealing of the deposited layers leads to the formation of L1 0 ordered FePd alloy with preferred (111) grain orientation. After the annealing at the highest used temperature, the dewetting process was observed, resulting in a creation of well oriented, regular nanoparticles. (author)

  15. Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

    Science.gov (United States)

    Tarsoly, Gergely; Pyo, Seungmoon

    2018-06-01

    We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

  16. Laser Annealing on the Surface Treatment of Thin Super Elastic NiTi Wire

    Science.gov (United States)

    Samal, S.; Heller, L.; Brajer, J.; Tyc, O.; Kadrevek, L.; Sittner, P.

    2018-05-01

    Here the aim of this research is annealing the surface of NiTi wire for shape memory alloy, super-elastic wire by solid state laser beam. The laser surface treatment was carried out on the NiTi wire locally with fast, selective, surface heat treatment that enables precisely tune the localized material properties without any precipitation. Both as drawn (hard) and straight annealing NiTi wire were considered for laser annealing with input power 3 W, with precisely focusing the laser beam height 14.3 % of the Z-axis with a spot size of 1 mm. However, straight annealing wire is more interest due to its low temperature shape setting behavior and used by companies for stent materials. The variable parameter such as speed of the laser scanning and tensile stress on the NiTi wire were optimized to observe the effect of laser response on the sample. Superelastic, straight annealed NiTi wires (d: 0.10 mm) were held prestrained at the end of the superelastic plateau (ε: 5 ∼6.5 %) above the superelastic region by a tensile machine ( Mitter: miniature testing rig) at room temperature (RT). Simultaneously, the hardness of the wires along the cross-section was performed by nano-indentation (NI) method. The hardness of the NiTi wire corresponds to phase changes were correlated with NI test. The laser induced NiTi wire shows better fatigue performance with improved 6500 cycles.

  17. Open-System Quantum Annealing in Mean-Field Models with Exponential Degeneracy*

    Directory of Open Access Journals (Sweden)

    Kostyantyn Kechedzhi

    2016-05-01

    Full Text Available Real-life quantum computers are inevitably affected by intrinsic noise resulting in dissipative nonunitary dynamics realized by these devices. We consider an open-system quantum annealing algorithm optimized for such a realistic analog quantum device which takes advantage of noise-induced thermalization and relies on incoherent quantum tunneling at finite temperature. We theoretically analyze the performance of this algorithm considering a p-spin model that allows for a mean-field quasiclassical solution and, at the same time, demonstrates the first-order phase transition and exponential degeneracy of states, typical characteristics of spin glasses. We demonstrate that finite-temperature effects introduced by the noise are particularly important for the dynamics in the presence of the exponential degeneracy of metastable states. We determine the optimal regime of the open-system quantum annealing algorithm for this model and find that it can outperform simulated annealing in a range of parameters. Large-scale multiqubit quantum tunneling is instrumental for the quantum speedup in this model, which is possible because of the unusual nonmonotonous temperature dependence of the quantum-tunneling action in this model, where the most efficient transition rate corresponds to zero temperature. This model calculation is the first analytically tractable example where open-system quantum annealing algorithm outperforms simulated annealing, which can, in principle, be realized using an analog quantum computer.

  18. Investigations of morphological changes during annealing of polyethylene single crystals

    NARCIS (Netherlands)

    Tian, M.; Loos, J.

    2001-01-01

    The morphological evolution of isolated individual single crystals deposited on solid substrates was investigated during annealing experiments using in situ and ex situ atomic force microscopy techniques. The crystal morphology changed during annealing at temperatures slightly above the original

  19. Fast assembly of ordered block copolymer nanostructures through microwave annealing.

    Science.gov (United States)

    Zhang, Xiaojiang; Harris, Kenneth D; Wu, Nathanael L Y; Murphy, Jeffrey N; Buriak, Jillian M

    2010-11-23

    Block copolymer self-assembly is an innovative technology capable of patterning technologically relevant substrates with nanoscale precision for a range of applications from integrated circuit fabrication to tissue interfacing, for example. In this article, we demonstrate a microwave-based method of rapidly inducing order in block copolymer structures. The technique involves the usage of a commercial microwave reactor to anneal block copolymer films in the presence of appropriate solvents, and we explore the effect of various parameters over the polymer assembly speed and defect density. The approach is applied to the commonly used poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) and poly(styrene)-b-poly(2-vinylpyridine) (PS-b-P2VP) families of block copolymers, and it is found that the substrate resistivity, solvent environment, and anneal temperature all critically influence the self-assembly process. For selected systems, highly ordered patterns were achieved in less than 3 min. In addition, we establish the compatibility of the technique with directed assembly by graphoepitaxy.

  20. Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

    International Nuclear Information System (INIS)

    Jaksic, A.B.; Pejovic, M.M.; Ristic, G.S.

    1999-01-01

    The paper presents results of isothermal and isochronal annealing experiments on several types of gamma-ray irradiated commercial N- and P-channel power VDMOSFETs. Transistors were characterized for their threshold voltage shift and densities of radiation-induced oxide-trap charge and interface traps. The results show that the temperature enhances interface trap formation and oxide-trap charge decay rates, but also contributes to the passivation of interface traps. The study demonstrates that formation and passivation of interface traps are simultaneous processes. At certain conditions (lower temperature and/or positive bias) interface-trap formation dominates. Oppositely, at other conditions (higher temperature and/or negative bias) passivation is predominant. However at some conditions there is a complex interplay between formation and passivation of interface traps, resulting in interface traps increase followed by decrease at later annealing times. No model for interface trap post-irradiation behavior can explain this effect better than the recently proposed H-W model

  1. High-temperature annealing of graphite: A molecular dynamics study

    Science.gov (United States)

    Petersen, Andrew; Gillette, Victor

    2018-05-01

    A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

  2. Annealing dependence of magnetic properties in nanostructured Sm0.5Y0.5Co5

    International Nuclear Information System (INIS)

    Elizalde-Galindo, J.T.; Hidalgo, J.L.; Botez, C.E.; Matutes-Aquino, J.A.

    2008-01-01

    Nanocrystalline Sm 0.5 Y 0.5 Co 5 powders with high coercivity H C and enhanced remanence M r were prepared by mechanical milling and subsequent annealing. Annealing temperatures T ranging from 973 to 1173 K, and times t ranging from 1 to 5 min were used. X-ray diffraction (XRD) and DC-magnetization measurements were carried out to study the microstructure and magnetic properties of these samples. XRD patterns demonstrate that the average grain size of the nanocrystalline powders depends on the annealing temperature T and time t: ranges from 11 nm (for T=973 K and t=1 min) to 93 nm (for T=1173 K and t=5 min). Magnetic measurements performed at room temperature indicate high coercivity values (H C >955 kA/m), and enhanced remanence (M r /M max >0.5) for all samples. A strong annealing-induced grain size dependence of these magnetic properties was found

  3. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.

    2012-05-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  4. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.; Koros, William J.; Johnson, J.R.; Karvan, Oguz

    2012-01-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  5. On lumped models for thermodynamic properties of simulated annealing problems

    International Nuclear Information System (INIS)

    Andresen, B.; Pedersen, J.M.; Salamon, P.; Hoffmann, K.H.; Mosegaard, K.; Nulton, J.

    1987-01-01

    The paper describes a new method for the estimation of thermodynamic properties for simulated annealing problems using data obtained during a simulated annealing run. The method works by estimating energy-to-energy transition probabilities and is well adapted to simulations such as simulated annealing, in which the system is never in equilibrium. (orig.)

  6. A note on simulated annealing to computer laboratory scheduling ...

    African Journals Online (AJOL)

    The concepts, principles and implementation of simulated Annealing as a modem heuristic technique is presented. Simulated Annealing algorithm is used in solving real life problem of Computer Laboratory scheduling in order to maximize the use of scarce and insufficient resources. KEY WORDS: Simulated Annealing ...

  7. Multi-frequency acoustic metasurface for extraordinary reflection and sound focusing

    Directory of Open Access Journals (Sweden)

    Yi-Fan Zhu

    2016-12-01

    Full Text Available We theoretically and numerically present the design of multi-frequency acoustic metasurfaces (MFAMs with simple structure that can work not only at fundamental frequency, but also at their harmonic frequencies, which breaks the single frequency limitation in conventional resonance-based acoustic metasurfaces. The phase matched condition for achromatic manipulation is discussed. We demonstrate achromatic extraordinary reflection and sound focusing at 1700Hz, 3400Hz, and 5100Hz, that is, they have the same reflection direction and the same focusing position. This significant feature may pave the way to new type of acoustic metasurface, and will also extend acoustic metasurface applications to strongly nonlinear source cases.

  8. The savant syndrome: an extraordinary condition. A synopsis: past, present, future.

    Science.gov (United States)

    Treffert, Darold A

    2009-05-27

    Savant syndrome is a rare, but extraordinary, condition in which persons with serious mental disabilities, including autistic disorder, have some 'island of genius' which stands in marked, incongruous contrast to overall handicap. As many as one in 10 persons with autistic disorder have such remarkable abilities in varying degrees, although savant syndrome occurs in other developmental disabilities or in other types of central nervous system injury or disease as well. Whatever the particular savant skill, it is always linked to massive memory. This paper presents a brief review of the phenomenology of savant skills, the history of the concept and implications for education and future research.

  9. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  10. On the dispersion characteristics of extraordinary mode in a relativistic fully degenerate electron plasma

    Science.gov (United States)

    Noureen, S.; Abbas, G.; Sarfraz, M.

    2018-01-01

    The study of relativistic degenerate plasmas is important in many astrophysical and laboratory environments. Using linearized relativistic Vlasov-Maxwell equations, a generalized expression for the plasma conductivity tensor is derived. Employing Fermi-Dirac distribution at zero temperature, the dispersion relation of the extraordinary mode in a relativistic degenerate electron plasma is investigated. The propagation characteristics are examined in different relativistic density ranges. The shifting of cutoff points due to relativistic effects is observed analytically and graphically. Non-relativistic and ultra-relativistic limiting cases are also presented.

  11. Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

    KAUST Repository

    Sun, Jian

    2012-02-21

    A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

  12. Learning FCM by chaotic simulated annealing

    International Nuclear Information System (INIS)

    Alizadeh, Somayeh; Ghazanfari, Mehdi

    2009-01-01

    Fuzzy cognitive map (FCM) is a directed graph, which shows the relations between essential components in complex systems. It is a very convenient, simple, and powerful tool, which is used in numerous areas of application. Experts who are familiar with the system components and their relations can generate a related FCM. There is a big gap when human experts cannot produce FCM or even there is no expert to produce the related FCM. Therefore, a new mechanism must be used to bridge this gap. In this paper, a novel learning method is proposed to construct FCM by using Chaotic simulated annealing (CSA). The proposed method not only is able to construct FCM graph topology but also is able to extract the weight of the edges from input historical data. The efficiency of the proposed method is shown via comparison of its results of some numerical examples with those of Simulated annealing (SA) method.

  13. Annealing texture of rolled nickel alloys

    International Nuclear Information System (INIS)

    Meshchaninov, I.V.; Khayutin, S.G.

    1976-01-01

    A texture of pure nickel and binary alloys after the 95% rolling and annealing has been studied. Insoluble additives (Mg, Zr) slacken the cubic texture in nickel and neral slackening of the texture (Zr). In the case of alloying with silicium (up to 2%) the texture practically coinsides with that of a technical-grade nickel. The remaining soluble additives either do not change the texture of pure nickel (C, Nb) or enhance the sharpness and intensity of the cubic compontnt (Al, Cu, Mn, Cr, Mo, W, Co -at their content 0.5 to 2.0%). A model is proposed by which variation of the annealing texture upon alloying is caused by dissimilar effect of the alloying elements on the mobility of high- and low-angle grain boundaries

  14. New approach for extraordinary transmission through an array of subwavelength apertures using thin ENNZ metamaterial liners.

    Science.gov (United States)

    Baladi, Elham; Pollock, Justin G; Iyer, Ashwin K

    2015-08-10

    Extraordinary transmission (ET) through a periodic array of subwavelength apertures on a perfect metallic screen has been studied extensively in recent years, and has largely been attributed to diffraction effects, for which the periodicity of the apertures, rather than their dimensions, dominates the response. The transmission properties of the apertures at resonance, on the other hand, are not typically considered 'extraordinary' because they may be explained using more conventional aperture-theoretical mechanisms. This work describes a novel approach for achieving ET in which subwavelength apertures are made to resonate by lining them using thin, epsilon-negative and near-zero (ENNZ) metamaterials. The use of ENNZ metamaterials has recently proven successful in miniaturizing circular waveguides by strongly reducing their natural cutoff frequencies, and the theory is adapted here for the design of subwavelength apertures in a metallic screen. We present simulations and proof-of-concept measurements at microwave frequencies that demonstrate ET for apertures measuring one-quarter of a wavelength in diameter and suggest the potential for even more dramatic miniaturization simply by engineering the ENNZ metamaterial dispersion. The results exhibit a fano-like profile whose frequency varies with the properties of the metamaterial liner, but is independent of period. It is suggested that similar behaviour can be obtained at optical frequencies, where ENNZ metamaterials may be realized using appropriately arranged chains of plasmonic nanoparticles.

  15. Misfitting and Hater Blocking: A Feminist Disability Analysis of the Extraordinary Body on Reality Television

    Directory of Open Access Journals (Sweden)

    Krystal Cleary

    2016-12-01

    Full Text Available This article analyzes three popular TLC programs that are emblematic of contemporary reality televisual representations of the extraordinary body: Abby & Brittany (2012, The Little Couple (2009-, and My Big Fat Fabulous Life (2015-. Extending Rosemarie Garland-Thomson's concept of "misfitting," I demonstrate how the non-normative body fits seamlessly into the mediated domain of reality television precisely because of its misfit in material and social spheres. The representational mode of these programs appears as a corrective to oppressive depictions of people with non-normative bodies, yet, I argue, the discourse of extraordinary normalcy built into the narrative framework of these programs is in fact supported by a scaffolding of normativizing logics that hinge upon casts members' whiteness, upward class mobility, and fulfillment of conventional gender and sexual norms. As such, I examine how specific bodies–heterosexual, white, gender normative, affluent–are called upon to perform disability on reality television. I assert that these programs dangerously depoliticize disability by narratively isolating it from other facets of identity and power, and furthermore regard ableism as an individual and moralistic matter perpetuated by antagonistic "haters" rather than a concern of the State.

  16. An exploratory study into the effects of extraordinary nature on emotions, mood, and prosociality

    Directory of Open Access Journals (Sweden)

    Yannick eJoye

    2015-01-01

    Full Text Available Environmental psychology research has demonstrated that exposure to mundane natural environments can be psychologically beneficial, and can, for instance, improve individuals’ mood and concentration. However, little research has yet examined the psychological benefits of extraordinary, awe-evoking kinds of nature, such as spectacular mountain scenes or impressive waterfalls. In this study, we aimed to address the underrepresentation of such extraordinary nature in research on human – nature interactions. Specifically, we examined whether watching a picture slideshow of awesome as opposed to mundane nature differentially affected individuals’ emotions, mood, social value orientation, and their willingness to donate something to others. Our analyses revealed that, compared to mundane nature and a neutral condition, watching awesome natural scenes and phenomena had some unique and pronounced emotional effects (e.g., feeling small and humble, triggered the most mood improvement, and led to a more prosocial social value orientation. We found that participants’ willingness to donate did not differ significantly for any of the conditions.

  17. Medium-Range Forecast Skill for Extraordinary Arctic Cyclones in Summer of 2008-2016

    Science.gov (United States)

    Yamagami, Akio; Matsueda, Mio; Tanaka, Hiroshi L.

    2018-05-01

    Arctic cyclones (ACs) are a severe atmospheric phenomenon that affects the Arctic environment. This study assesses the forecast skill of five leading operational medium-range ensemble forecasts for 10 extraordinary ACs that occurred in summer during 2008-2016. Average existence probability of the predicted ACs was >0.9 at lead times of ≤3.5 days. Average central position error of the predicted ACs was less than half of the mean radius of the 10 ACs (469.1 km) at lead times of 2.5-4.5 days. Average central pressure error of the predicted ACs was 5.5-10.7 hPa at such lead times. Therefore, the operational ensemble prediction systems generally predict the position of ACs within 469.1 km 2.5-4.5 days before they mature. The forecast skill for the extraordinary ACs is lower than that for midlatitude cyclones in the Northern Hemisphere but similar to that in the Southern Hemisphere.

  18. Pyrolytic citrate synthesis and ozone annealing

    International Nuclear Information System (INIS)

    Celani, F.; Saggese, A.; Giovannella, C.; Messi, R.; Merlo, V.

    1988-01-01

    A pyrolytic procedure is described that via a citrate synthesis allowed us to obtain very fine grained YBCO powders that, after a first furnace thermal treatment in ozone, results already to contain a large amount of superconducting microcrystals. A second identical thermal treatment gives a final product strongly textured, as shown by magnetic torque measurements. Complementary structural and diamagnetic measurement show the high quality of these sintered pellets. The role covered by both the pyrolytic preparation and the ozone annealing are discussed

  19. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Appleton, B.R.; Wilson, S.R.

    1980-01-01

    Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables

  20. Simulated annealing algorithm for optimal capital growth

    Science.gov (United States)

    Luo, Yong; Zhu, Bo; Tang, Yong

    2014-08-01

    We investigate the problem of dynamic optimal capital growth of a portfolio. A general framework that one strives to maximize the expected logarithm utility of long term growth rate was developed. Exact optimization algorithms run into difficulties in this framework and this motivates the investigation of applying simulated annealing optimized algorithm to optimize the capital growth of a given portfolio. Empirical results with real financial data indicate that the approach is inspiring for capital growth portfolio.

  1. Annealing effects in solid-state track recorders

    International Nuclear Information System (INIS)

    Gold, R.; Roberts, J.H.; Ruddy, F.H.

    1981-01-01

    Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work

  2. Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Sharif, Rehana; Husnain, G

    2009-01-01

    Mn ions were implanted into GaN thin films with six doses ranging from 10 14 to 5 x 10 16 cm -2 and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M s and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

  3. Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Sharif, Rehana [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Husnain, G, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 (China)

    2009-07-07

    Mn ions were implanted into GaN thin films with six doses ranging from 10{sup 14} to 5 x 10{sup 16} cm{sup -2} and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M{sub s} and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

  4. Response to annealing and reirradiation of AISI 304L stainless steel following initial high-dose neutron irradiation in EBR-II

    International Nuclear Information System (INIS)

    Porter, D.L.; McVay, G.L.; Walters, L.C.

    1980-01-01

    The object of this study was to measure the stability of irradiation-induced microstructure upon annealing and, by selectively annealing out some of these features and reirradiating the material, it was expected that information could be gained concerning the role of microstructural changes in the void swelling process. Transmission electron microscopic examinations of isochronally annealed (200 to 1050 0 C) AISI 304L stainless steel, which had been irradiated at approximately 415 0 C to a fast (E > 0.1 MeV) neutron fluence of approximately 5.1 x 10 26 n/m 2 , verified that the two-stage hardness recovery with temperatures was related to a low temperature annealing of dislocation structures and a higher temperature annealing of voids and solute redistribution

  5. Effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

    International Nuclear Information System (INIS)

    Pelz, J.; Clarke, J.

    1985-10-01

    Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defect. With an electron dose of about 5 x 10 20 cm -2 , the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These result suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistant with the Dutta-Dimon-Horn thermal activation model

  6. Influence of cold deformation and annealing on hydrogen embrittlement of cold hardening bainitic steel for high strength bolts

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Weijun, E-mail: wjhui@bjtu.edu.cn [School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044 (China); Zhang, Yongjian; Zhao, Xiaoli; Shao, Chengwei [School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044 (China); Wang, Kaizhong; Sun, Wei; Yu, Tongren [Technical Center, Maanshan Iron & Steel Co., Ltd., Maanshan 243002, Anhui (China)

    2016-04-26

    The influence of cold drawing and annealing on hydrogen embrittlement (HE) of newly developed cold hardening bainitic steel was investigated by using slow strain rate testing (SSRT) and thermal desorption spectrometry (TDS), for ensuring safety performance of 10.9 class high strength bolts made of this kind of steel against HE under service environments. Hydrogen was introduced into the specimen by electrochemical charging. TDS analysis shows that the hydrogen-charged cold drawn specimen exhibits an additional low-temperature hydrogen desorption peak besides the original high-temperature desorption peak of the as-rolled specimen, causing remarkable increase of absorbed hydrogen content. It is found that cold drawing significantly enhances the susceptibility to HE, which is mainly attributed to remarkable increase of diffusible hydrogen absorption, the occurrence of strain-induced martensite as well as the increase of strength level. Annealing after cold deformation is an effective way to improve HE resistance and this improvement strongly depends on annealing temperature, i.e. HE susceptibility decreases slightly with increasing annealing temperature up to 200 °C and then decreases significantly with further increasing annealing temperature. This phenomenon is explained by the release of hydrogen, the recovery of cold worked microstructure and the decrease of strength with increasing annealing temperature.

  7. The effects of 500 keV electron irradiation and subsequent annealing on 1/f noise in copper films

    International Nuclear Information System (INIS)

    Pelz, J.; Clarke, J.

    1986-01-01

    Polycrystalline copper films were maintained at 90K on the cold stage of an electron microscope and irradiated with 500keV electrons to induce defects. With an electron dose of about 5 x 10 20 cm -2 , the spectral density of the noise voltage across the films increased by an order of magnitude while the electrical resistivity increased by at most 10%. The films were annealed at progressively higher temperatures; after each annealing process the 1/f noise and resistivity were remeasured at 90K. Both the 1/f noise and resistivity were reduced, but at the lower annealing temperatures the fractional reduction in the added noise was substantially more than in the added resistivity. These results suggest that a large fraction of the added noise may be generated by a small mobile fraction of the added defects that are more readily annealed than the majority of the defects. After a room temperature annealing process, both the noise and resistivity returned nearly to their initial values. The temperature dependence of the noise after irradiation and partial annealing was consistent with the Dutta-Dimon-Horn thermal activation model. (Auth.)

  8. Bioprospecting finds the toughest biological material: extraordinary silk from a giant riverine orb spider.

    Directory of Open Access Journals (Sweden)

    Ingi Agnarsson

    Full Text Available BACKGROUND: Combining high strength and elasticity, spider silks are exceptionally tough, i.e., able to absorb massive kinetic energy before breaking. Spider silk is therefore a model polymer for development of high performance biomimetic fibers. There are over 41,000 described species of spiders, most spinning multiple types of silk. Thus we have available some 200,000+ unique silks that may cover an amazing breadth of material properties. To date, however, silks from only a few tens of species have been characterized, most chosen haphazardly as model organisms (Nephila or simply from researchers' backyards. Are we limited to 'blindly fishing' in efforts to discover extraordinary silks? Or, could scientists use ecology to predict which species are likely to spin silks exhibiting exceptional performance properties? METHODOLOGY: We examined the biomechanical properties of silk produced by the remarkable Malagasy 'Darwin's bark spider' (Caerostris darwini, which we predicted would produce exceptional silk based upon its amazing web. The spider constructs its giant orb web (up to 2.8 m(2 suspended above streams, rivers, and lakes. It attaches the web to substrates on each riverbank by anchor threads as long as 25 meters. Dragline silk from both Caerostris webs and forcibly pulled silk, exhibits an extraordinary combination of high tensile strength and elasticity previously unknown for spider silk. The toughness of forcibly silked fibers averages 350 MJ/m(3, with some samples reaching 520 MJ/m(3. Thus, C. darwini silk is more than twice tougher than any previously described silk, and over 10 times better than Kevlar®. Caerostris capture spiral silk is similarly exceptionally tough. CONCLUSIONS: Caerostris darwini produces the toughest known biomaterial. We hypothesize that this extraordinary toughness coevolved with the unusual ecology and web architecture of these spiders, decreasing the likelihood of bridgelines breaking and collapsing the web

  9. Tungsten-zirconium carbide-rhenium alloys with extraordinary thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Yang, X.D. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Xie, Z.M.; Miao, S. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Liu, R.; Jiang, W.B. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Zhang, T., E-mail: zhangtao@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Wang, X.P., E-mail: xpwang@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Fang, Q.F. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Liu, C.S., E-mail: csliu@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Luo, G.N. [Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 (China); Liu, X. [Southwest Institute of Plasma Physics, Chengdu (China)

    2016-05-15

    The low recrystallization temperature (1200 °C) of pure W is a serious limitation for application as facing plasma materials in fusion reactor. In this paper, W-0.5wt.%ZrC-1wt.%Re (WZR) alloy with recrystallization temperature up to 1800 °C was prepared by mechanical milling and spark plasma sintering. The grain size of WZR alloy is about 2.6 μm, smaller than that of pure W (4.4 μm), which keeps unchanged until the annealing temperature increases to 1800 °C. Tensile tests indicate that the WZR alloys exhibit excellent comprehensive properties: the ductile to brittle transition temperature of WZR is in the range from 400 °C to 500 °C, about 200 °C lower than that of pure W prepared by the same process; the total elongation (TE) of WZR at 600 °C is above 30%, which is about 2 times that of pure W (at 700 °C). Meanwhile its tensile strength keeps ∼450 MPa before and after 1800 °C annealing as well as its TE increases after annealing. WZR alloy exhibits higher hardness (489HV) than that of pure W (453HV) at room temperature. Microstructure analysis indicates that the strengthening of nano-sized ZrC particles dispersion and Re solid solution improve tensile properties and thermal stability of WZR alloy.

  10. Microstructural evolution of Au/TiO{sub 2} nanocomposite films: The influence of Au concentration and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Centro/Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Kubart, T.; Kumar, S.; Leifer, K. [Solid-State Electronics, Department of Engineering Sciences, Uppsala University, P.O. Box 534, Uppsala SE-751 21 (Sweden); Rodrigues, M.S. [Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Centro/Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Duarte, N.; Martins, B.; Dias, J.P. [Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Vaz, F. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Centro/Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-04-01

    Nanocomposite thin films consisting of a dielectric matrix, such as titanium oxide (TiO{sub 2}), with embedded gold (Au) nanoparticles were prepared and will be analysed and discussed in detail in the present work. The evolution of morphological and structural features was studied for a wide range of Au concentrations and for annealing treatments in air, for temperatures ranging from 200 to 800 °C. Major findings revealed that for low Au atomic concentrations (at.%), there are only traces of clustering, and just for relatively high annealing temperatures, T ≥ 500 °C. Furthermore, the number of Au nanoparticles is extremely low, even for the highest annealing temperature, T = 800 °C. It is noteworthy that the TiO{sub 2} matrix also crystallizes in the anatase phase for annealing temperatures above 300 °C. For intermediate Au contents (5 at.% ≤ C{sub Au} ≤ 15 at.%), the formation of gold nanoclusters was much more evident, beginning at lower annealing temperatures (T ≥ 200 °C) with sizes ranging from 2 to 25 nm as the temperature increased. A change in the matrix crystallization from anatase to rutile was also observed in this intermediate range of compositions. For the highest Au concentrations (> 20 at.%), the films tended to form relatively larger clusters, with sizes above 20 nm (for T ≥ 400 °C). It is demonstrated that the structural and morphological characteristics of the films are strongly affected by the annealing temperature, as well as by the particular amounts, size and distribution of the Au nanoparticles dispersed in the TiO{sub 2} matrix. - Highlights: • Au:TiO{sub 2} films were produced by magnetron sputtering and post-deposition annealing. • The Au concentration in the films increases with the Au pellet area. • Annealing induced microstructural changes in the films. • The nanoparticle size evolution with temperature depends on the Au concentration.

  11. Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation

    International Nuclear Information System (INIS)

    Liang, J.H.; Sang, Y.J.; Wang, C.-H.; Wang, T.W.; Hsu, J.Y.; Niu, H.; Tseng, M.S.

    2005-01-01

    This study examines the post-annealing-dependent behaviors of the shallow junction produced by implanting 10 15 cm -2 20 keV BGe ions into n-type silicon specimens. Post-annealing treatments consisted of one- and two-step annealing including both furnace annealing (FA) and rapid thermal annealing (RTA). Comparison of the one-step FA at 550 deg. C and the one-step RTA at 1050 deg. C revealed that boron depth profiles were slightly diffused in the former but exhibited considerable transient-enhanced diffusion (TED) in the latter. However, both the one-step FA- and RTA-annealed germanium depth profiles barely diffused, while the latter diffusing slightly deeper than the former. The optimum value of junction depth (x j ) times sheet resistance (R s ) was obtained with one-step FA at 550 deg. C for 1 h. The two-step annealing (FA at 550 deg. C and RTA at 1050 deg. C) results showed that the RTA-induced TED in the boron depth profiles could be effectively retarded only when FA took place for more than 3 h. Again, germanium depth profiles are also barely diffused while the corresponding TEDs were larger than those in one-step FA but smaller than those in one-step RTA. Furthermore, the two-step annealing of FA at 550 deg. C for 3 h followed by RTA at 1050 deg. C for 30 s is suggested when attempting to obtain an optimum value of x j R s

  12. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  13. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  14. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  15. Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko

    2007-01-01

    We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10 17 and 4.0 x 10 17 cm -2 . A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi 2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi 2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si

  16. Manipulating the Morphology of P3HT–PCBM Bulk Heterojunction Blends with Solvent Vapor Annealing

    KAUST Repository

    Verploegen, Eric; Miller, Chad E.; Schmidt, Kristin; Bao, Zhenan; Toney, Michael F.

    2012-01-01

    Using grazing incidence X-ray scattering, we observe the effects of solvent vapors upon the morphology of poly(3-hexylthiophene)-phenyl-C 61-butyric acid methyl ester (P3HT-PCBM) bulk heterojunction thin film blends in real time; allowing us to observe morphological rearrangements that occur during this process as a function of solvent. We detail the swelling of the P3HT crystallites upon the introduction of solvent and the resulting changes in the P3HT crystallite morphology. We also demonstrate the ability for tetrahydrofuran vapor to induce crystallinity in PCBM domains. Additionally, we measure the nanoscale phase segregated domain size as a function of solvent vapor annealing and correlate this to the changes observed in the crystallite morphology of each component. Finally, we discuss the implications of the morphological changes induced by solvent vapor annealing on the device properties of BHJ solar cells. © 2012 American Chemical Society.

  17. Manipulating the Morphology of P3HT–PCBM Bulk Heterojunction Blends with Solvent Vapor Annealing

    KAUST Repository

    Verploegen, Eric

    2012-10-23

    Using grazing incidence X-ray scattering, we observe the effects of solvent vapors upon the morphology of poly(3-hexylthiophene)-phenyl-C 61-butyric acid methyl ester (P3HT-PCBM) bulk heterojunction thin film blends in real time; allowing us to observe morphological rearrangements that occur during this process as a function of solvent. We detail the swelling of the P3HT crystallites upon the introduction of solvent and the resulting changes in the P3HT crystallite morphology. We also demonstrate the ability for tetrahydrofuran vapor to induce crystallinity in PCBM domains. Additionally, we measure the nanoscale phase segregated domain size as a function of solvent vapor annealing and correlate this to the changes observed in the crystallite morphology of each component. Finally, we discuss the implications of the morphological changes induced by solvent vapor annealing on the device properties of BHJ solar cells. © 2012 American Chemical Society.

  18. Effects of annealing, acid and alcoholic beverages on Fe1+yTe0.6Se0.4

    International Nuclear Information System (INIS)

    Sun, Y; Taen, T; Tsuchiya, Y; Tamegai, T; Shi, Z X

    2013-01-01

    We have systematically investigated and compared different methods to induce superconductivity in the iron chalcogenide Fe 1+y Te 0.6 Se 0.4 , including annealing in a vacuum, N 2 , O 2 and I 2 atmospheres and immersing samples into acid and alcoholic beverages. Vacuum and N 2 annealing are proved to be ineffective in inducing superconductivity in a Fe 1+y Te 0.6 Se 0.4 single crystal. Annealing in O 2 and I 2 and immersion in acid and alcoholic beverages can induce superconductivity by oxidizing the excess Fe in the sample. Superconductivity in O 2 annealed samples is of a bulk nature, while I 2 , acid and alcoholic beverages can only induce superconductivity near the surface. By comparing the different effects of O 2 , I 2 , acid and alcoholic beverages we propose a scenario to explain how the superconductivity is induced in the non-superconducting as-grown Fe 1+y Te 0.6 Se 0.4 . (paper)

  19. His Excellency Mr Ali Naci Koru Ambassador extraordinary and plenipotentiary Permanent Representative of Turkey to the United Nations Office at Geneva and other international organisations in Switzerland

    CERN Multimedia

    Bennett, Sophia Elizabeth

    2017-01-01

    His Excellency Mr Ali Naci Koru Ambassador extraordinary and plenipotentiary Permanent Representative of Turkey to the United Nations Office at Geneva and other international organisations in Switzerland

  20. His Excellency Mr Juraj Podhorsky Ambassador Extraordinary and Plenipotentiary Permanent Representative of the Slovak Republic to the United Nations Office and other international organisations in Geneva

    CERN Multimedia

    Ordan, Julien Marius

    2017-01-01

    His Excellency Mr Juraj Podhorsky Ambassador Extraordinary and Plenipotentiary Permanent Representative of the Slovak Republic to the United Nations Office and other international organisations in Geneva

  1. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian

    2010-11-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.

  2. Extraordinary mid-infrared transmission of subwavelength holes in gold films

    KAUST Repository

    Yue, Weisheng; Wang, Zhihong; Yang, Yang; Chen, Longqing; Syed, Ahad A.; Wang, Xianbin

    2014-01-01

    Gold (Au) nanoholes are fabricated with electron-beam lithography and used for the investigation of extraordinary transmission in mid-infrared regime. Transmission properties of the nanoholes are studied as the dependence on hole-size. Transmittance spectra are characterized by Fourier transform infrared spectroscopy (FTIR) and enhanced transmittance through the subwavelength holes is observed. The transmission spectra exhibit well-defined maximum and minimum of which the position are determined by the lattice of the hole array. The hole-size primarily influence the transmission intensity and bandwidth of the resonance peak. With an increase of hole-size, while keep lattice constant fixed, the intensity of the resonance peak and the bandwidth increases, which are due to the localized surface plasmons. Numerical simulation for the transmission through the subwavelength holes is performed and the simulated results agree with the experimental observations. Copyright © 2014 American Scientific Publishers.

  3. Extraordinary mid-infrared transmission of subwavelength holes in gold films

    KAUST Repository

    Yue, Weisheng

    2014-04-01

    Gold (Au) nanoholes are fabricated with electron-beam lithography and used for the investigation of extraordinary transmission in mid-infrared regime. Transmission properties of the nanoholes are studied as the dependence on hole-size. Transmittance spectra are characterized by Fourier transform infrared spectroscopy (FTIR) and enhanced transmittance through the subwavelength holes is observed. The transmission spectra exhibit well-defined maximum and minimum of which the position are determined by the lattice of the hole array. The hole-size primarily influence the transmission intensity and bandwidth of the resonance peak. With an increase of hole-size, while keep lattice constant fixed, the intensity of the resonance peak and the bandwidth increases, which are due to the localized surface plasmons. Numerical simulation for the transmission through the subwavelength holes is performed and the simulated results agree with the experimental observations. Copyright © 2014 American Scientific Publishers.

  4. Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

    KAUST Repository

    Sun, Jian

    2012-06-06

    An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

  5. Extraordinary refraction and self-collimation properties of multilayer metallic-dielectric stratified structures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liwei, E-mail: zlwhpu@hotmail.com [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Chen, Liang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Zhang, Zhengren [School of Science, Chongqing Jiaotong University, Chongqing 400074 (China); Wang, Wusong [Guizhou Aerospace Institute of Measuring and Testing Technology, Guiyang 550009 (China); Zhao, Yuhuan; Song, Kechao; Kang, Chaoyang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China)

    2015-01-15

    The extraordinary refraction with negative or zero refraction angle of the layered metamaterial consisting of alternating dielectric and plasmonic layers is theoretically studied. It is shown that the electromagnetic properties can be tuned by the filling factor, the permittivity of the dielectric layer and the plasma frequency of the metallic layer. At different frequency, the layered structures possess different refraction properties with positive, zero or negative refraction angle. By choosing appropriate parameters, positive-to-zero-to-negative-to positive refraction at the desired frequency can be realized. At the frequency with flat equal frequency contour, self-collimation and slow light properties are also found. Such properties can be used in the performance of negative refraction, subwavelength imaging and information propagation.

  6. Enhanced extraordinary optical transmission (EOT) through arrays of bridged nanohole pairs and their sensing applications

    KAUST Repository

    Yue, Weisheng

    2014-01-01

    Extraordinary optical transmission (EOT) through arrays of gold nanoholes was studied with light across the visible to the near-infrared spectrum. The EOT effect was found to be improved by bridging pairs of nanoholes due to the concentration of the electromagnetic field in the slit between the holes. The geometrical shape and separation of the holes in these pairs of nanoholes affected the intensity of the transmission and the wavelength of resonance. Changing the geometrical shapes of these nanohole pairs from triangles to circles to squares leads to increased transmission intensity as well as red-shifting resonance wavelengths. The performance of bridged nanohole pairs as a plasmonic sensor was investigated. The bridged nanohole pairs were able to distinguish methanol, olive oil and microscope immersion oil for the different surface plasmon resonance in transmission spectra. Numerical simulation results were in agreement with experimental observations. © 2014 the Partner Organisations.

  7. Quasi-linear analysis of the extraordinary electron wave destabilized by runaway electrons

    Energy Technology Data Exchange (ETDEWEB)

    Pokol, G. I.; Kómár, A.; Budai, A. [Department of Nuclear Techniques, Budapest University of Technology and Economics, Budapest (Hungary); Stahl, A.; Fülöp, T. [Department of Applied Physics, Chalmers University of Technology, Göteborg (Sweden)

    2014-10-15

    Runaway electrons with strongly anisotropic distributions present in post-disruption tokamak plasmas can destabilize the extraordinary electron (EXEL) wave. The present work investigates the dynamics of the quasi-linear evolution of the EXEL instability for a range of different plasma parameters using a model runaway distribution function valid for highly relativistic runaway electron beams produced primarily by the avalanche process. Simulations show a rapid pitch-angle scattering of the runaway electrons in the high energy tail on the 100–1000 μs time scale. Due to the wave-particle interaction, a modification to the synchrotron radiation spectrum emitted by the runaway electron population is foreseen, exposing a possible experimental detection method for such an interaction.

  8. What makes a champion! over fifty extraordinary individuals share their insights

    CERN Document Server

    2014-01-01

    What drives great and successful individuals — be they athletes, artists, or scientists — or businesses, to achieve the extraordinary? Over fifty champions from all walks of life, brought together by Allan Snyder, draw on their experiences to explore the secrets of success in this inspiring, revealing and thought-provoking book. Hear from the authors what made a McDonalds' branch become the most successful in the world; how a cottage business is catapulted into a world brand; how a visual artist's works crosses almost every medium imaginable; how an Ernst and Young setup becomes a top-notch employer; or why many geniuses or brilliant individuals never become champions, while many 'ordinary' individuals do; why many people don't know about their talent; what constitutes a champion outcome; and the neurological explanation for championship. Straddling academia and practitioners in all fields — government, entertainment, sports, business, arts, education, medicine, media — the authors include business...

  9. Controlling RPV embrittlement through wet annealing in support of life attainment and life extension decisions

    International Nuclear Information System (INIS)

    Krasikov, E. A.

    2012-01-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of Nuclear Power Plant (NPP) safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. Low temperature 'wet' annealing at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. As a rule there is no recovery effect up to annealing and irradiation temperature difference of 70 deg. C. It is known, however, that along with radiation embrittlement neutron irradiation may mitigate the radiation damage in metals. Therefore we have tried to test the possibility to use the effect of radiation-induced ductilization in 'wet' annealing technology by means of nuclear heat utilization as heat and neutron irradiation sources at once. In support of the above-mentioned conception the 3-year duration reactor experiment on 15Cr3NiMoV type steel with preliminary irradiation at operating Pressurized Water Reactor (PWR) at 270 deg. C and following extra irradiation (87 h at 330 deg. C) at IR-8 test reactor was fulfilled. In fact, embrittlement was partly suppressed up to value equivalent to 1,5 fold neutron fluence decrease. The degree of recovery in case of radiation enhanced annealing is equal to 27% whereas furnace annealing results in zero effect under existing conditions. Mechanism of the radiation-induced damage mitigation is proposed. It is hoped that 'wet' annealing technology will help provide a better management of the RPV degradation as a factor affecting the lifetime of nuclear power plants which, together with associated

  10. Controlling RPV embrittlement through wet annealing in support of life attainment and life extension decisions

    International Nuclear Information System (INIS)

    Krasikov, E.A.

    2012-01-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of Nuclear Power Plant (NPP) safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. Low temperature annealing at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. As a rule there is no recovery effect up to annealing and irradiation temperature difference of 70 o C. It is known, however, that along with radiation embrittlement neutron irradiation may mitigate the radiation damage in metals. Therefore we have tried to test the possibility to use the effect of radiation-induced ductilization in annealing technology by means of nuclear heat utilization as heat and neutron irradiation sources at once. In support of the above-mentioned conception the 3-year duration reactor experiment on 15Cr3NiMoV type steel with preliminary irradiation at operating Pressurized Water Reactor (PWR) at 270 o C and following extra irradiation (87 h at 330 o C) at IR-8 test reactor was fulfilled. In fact, embrittlement was partly suppressed up to value equivalent to 1,5 fold neutron fluence decrease. The degree of recovery in case of radiation enhanced annealing is equal to 27% whereas furnace annealing results in zero effect under existing conditions. Mechanism of the radiation-induced damage mitigation is proposed. It is hoped that annealing technology will help provide a better management of the RPV degradation as a factor affecting the lifetime of nuclear power plants which, together with associated management methods, will help

  11. Controlling RPV embrittlement through wet annealing in support of life attainment and life extension decisions

    Energy Technology Data Exchange (ETDEWEB)

    Krasikov, E. A. [National Research Centre Kurchatov Inst., 1, Kurchatov Sq., Moscow, 123182 (Russian Federation)

    2012-07-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of Nuclear Power Plant (NPP) safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. Low temperature 'wet' annealing at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. As a rule there is no recovery effect up to annealing and irradiation temperature difference of 70 deg. C. It is known, however, that along with radiation embrittlement neutron irradiation may mitigate the radiation damage in metals. Therefore we have tried to test the possibility to use the effect of radiation-induced ductilization in 'wet' annealing technology by means of nuclear heat utilization as heat and neutron irradiation sources at once. In support of the above-mentioned conception the 3-year duration reactor experiment on 15Cr3NiMoV type steel with preliminary irradiation at operating Pressurized Water Reactor (PWR) at 270 deg. C and following extra irradiation (87 h at 330 deg. C) at IR-8 test reactor was fulfilled. In fact, embrittlement was partly suppressed up to value equivalent to 1,5 fold neutron fluence decrease. The degree of recovery in case of radiation enhanced annealing is equal to 27% whereas furnace annealing results in zero effect under existing conditions. Mechanism of the radiation-induced damage mitigation is proposed. It is hoped that 'wet' annealing technology will help provide a better management of the RPV degradation as a factor affecting the lifetime of nuclear power plants which

  12. Emission properties of MEH-PPV in thin films simultaneously illuminated and annealed at different temperatures

    KAUST Repository

    Botiz, Ioan; Freyberg, Paul; Leordean, Cosmin; Gabudean, Ana-Maria; Astilean, Simion; Yang, Arnold Chang-Mou; Stingelin, Natalie

    2015-01-01

    © 2014 Elsevier B.V. All rights reserved. We report on the enhancement of photoluminescence in thin films of poly[2-methoxy-5-((2′-ethylhexyl)oxy)-1,4-phenylenvinylene], neat or embedded in polystyrene, upon illumination with light as a function of annealing temperature, with our data emphasizing the picture of a light-induced conformation change that leads to the altered photophysical response of this polymer.

  13. The effect of different annealing treatments on magneto-impedance in Finemet wires

    International Nuclear Information System (INIS)

    Hernando, B.; Olivera, J.; Alvarez, P.; Santos, J.D.; Sanchez, M.L.; Perez, M.J.; Sanchez, T.; Gorria, P.

    2006-01-01

    In this paper, we analyze the behaviour of Fe-rich wires that have been submitted to a current annealing, with and without an applied torsional stress. The structural relaxation and induced anisotropies achieved in the samples produce different effects in the magneto-impedance and torsion impedance response, in comparison with the as-quenched wire, due to the different domain structure and magnetization processes involved

  14. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

    2017-03-01

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400-1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1.10{sup 18} α-decay events per gram (dpg)], Panda Hill/Tanzania (1.6 wt% Th, 1.6.10{sup 18} dpg), and Blue River/Canada (10.5 wt% U, 115.4.10{sup 18} dpg), are compared with a crystalline reference pyrochlore from Schelingen (Germany). The type of structural recovery depends on the initial degree of radiation damage (Panda Hill 28%, Blue River 85% and Miass 100% according to XRD), as the recrystallization temperature increases with increasing degree of amorphization. Raman spectra indicate reordering on the local scale during annealing-induced recrystallization. As Raman modes around 800 cm{sup -1} are sensitive to radiation damage (M. T. Vandenborre, E. Husson, Comparison of the force field in various pyrochlore families. I. The A{sub 2}B{sub 2}O{sub 7} oxides. J. Solid State Chem. 1983, 50, 362, S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, P. Simon, I. Monnet, W. J. Weber, Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. Phys. Rev. 2011, 84, 64115.), the degree of local order was deduced from the ratio of the integrated intensities of the sum of the Raman bands between 605 and 680 cm{sup -1} divided by the sum of the integrated intensities of the bands between 810 and 860 cm{sup -1}. The most radiation damaged pyrochlore (Miass) shows an abrupt recovery of both, its short- (Raman) and long-range order (X-ray) between 800 and 850 K, while the weakly damaged pyrochlore (Panda Hill) begins to recover at considerably lower temperatures (near 500 K

  15. Evolution of Zr/Hf/Zr trilayers during annealing studied by RBS

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.

    2010-01-01

    The Zr/Hf system is highly interesting due its various applications, e.g. formation of amorphous ternary alloys, superconductive properties and production of gate oxide layers with high dielectric coefficients by oxidation of Zr/Hf multilayers. In this work Zr/Hf/Zr trilayers with an individual layer thickness of approximately 50 nm were deposited by electron gun evaporation on a substrate consisting of silicon covered by a micrometer thick thermal oxide layer. Samples were subjected to annealing procedures at 500 and 1200 o C in flowing air atmosphere to promote oxidation and Zr/Hf interdiffusion effects. RBS studies of the as-deposited and annealed samples were performed at the van-de-Graaff accelerator of ITN using He + and H + beams with energies between 2.0 and 2.525 MeV in order to study compositional changes induced by the heat treatment. In the case of low-temperature annealing the layer system appears, besides the oxidation process starting from the surface, to be stable. On the other hand, high-temperature annealing leads to an asymmetric Hf-diffusion into the surface and interior Zr-layer provoked by anomalous diffusion due to a phase transition in Zr accompanied by an almost complete oxidation of the layer structure Oxygen and metal depth distributions obtained by RBS in the as-deposited and treated samples are provided.

  16. Effect of Doping Phosphorescent Material and Annealing Treatment on the Performance of Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Zixuan Wang

    2013-01-01

    Full Text Available A series of polymer solar cells (PSCs with P3HT:PCBM or P3HT:PCBM:Ir(btpy3 blend films as the active layer were fabricated under the same conditions. Effects of phosphorescent material Ir(btpy3 doping concentration and annealing temperature on the performance of PSCs were investigated. The short-circuit current density (Jsc and open-circuit voltage (Voc are increased by adopting P3HT:PCBM:Ir(btpy3 blend films as the active layer when the cells do not undergo annealing treatment. The increased Jsc should be attributed to the increase of photon harvesting induced by doping phosphorescent material Ir(btpy3 and the effective energy transfer from Ir(btpy3 to P3HT. The effective energy transfer from Ir(btpy3 to P3HT was demonstrated by time-resolved photoluminescence (PL spectra. The increased Voc is due to the photovoltaic effect between Ir(btpy3 and PCBM. The power conversion efficiency (PCE of PSCs with P3HT:PCBM as the active layer is increased from 0.19% to 1.49% by annealing treatment at 140°C for 10 minutes. The PCE of PSCs with P3HT:PCBM:Ir(btpy3 as the active layer is increased from 0.49% to 0.95% by annealing treatment at lower temperature at 100°C for 10 minutes.

  17. Effect of annealing temperature on the anatase and rutile TiO2 nano tubes formation

    International Nuclear Information System (INIS)

    Zainovia Lockman; Kit, C.H.; Srimala Sreekantan

    2009-01-01

    Herein, we report on the optimum condition for TiO 2 titania nano tubes formation and the effect of annealing on the formation of anatse and rutile titania. Anodic oxidation was carried out in two electrodes bath consisting of 5 wt % NH 4 F ions. The anode was a 0.1 mm thick Ti foil and the cathode was Pt electrode. Anodization was conducted at 20 V. The anodised foils were subjected to morphological and structural characterizations. As-anodised foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, x-ray diffraction analysis revealed the presence of (101) anatase at annealing temperature from 400 - 500 degree Celsius. This indicates that the transformation occurs at this range of temperatures. Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 degree Celsius. At above 600 degree Celsius, x-ray diffraction pattern shows a peak belonging to the rutile peak. Transformation from anatase to rutile is thought to occur at about 500 degree Celsius with a more complete transformation at higher temperature. Annealing at higher than 600 degree Celsius induces thickening of the nano tubes wall and at above 700 degree Celsius, the nano tubes structure has completely disappeared. (author)

  18. Damage recovery in ZnO by post-implantation annealing

    International Nuclear Information System (INIS)

    Audren, A.; Hallen, A.; Linnarsson, M.K.; Possnert, G.

    2010-01-01

    ZnO bulk samples were implanted with 200 keV-Co ions at room temperature with two fluences, 1 x 10 16 and 8 x 10 16 cm -2 , and then annealed in air for 30 min at different temperatures up to 900 o C. After the implantation and each annealing step, the samples were analyzed by Rutherford backscattering spectrometry (RBS) in random and channeling directions to follow the evolution of the disorder profile. The RBS spectra reveal that disorder is created during implantation in proportion to the Co fluence. The thermal treatments induce a disorder recovery, which is however, not complete after annealing at 900 o C, where about 15% of the damage remains. To study the Co profile evolution during annealing, the samples were, in addition to RBS, characterized by secondary ion mass spectrometry (SIMS). The results show that Co diffusion starts at 800 o C, but also that a very different behavior is seen for Co concentrations below and above the solubility limit.

  19. A novel sandwich Fe-Mn damping alloy with ferrite shell prepared by vacuum annealing

    Science.gov (United States)

    Qian, Bingnan; Peng, Huabei; Wen, Yuhua

    2018-04-01

    To improve the corrosion resistance of high strength Fe-Mn damping alloys, we fabricated a novel sandwich Fe-17.5Mn damping alloy with Mn-depleted ferrite shell by vacuum annealing at 1100 °C. The formation behavior of the ferrite shell obeys the parabolic law for the vacuum annealed Fe-17.5Mn alloy at 1100 °C. The sandwich Fe-17.5Mn alloy with ferrite shell exhibits not only better corrosion resistance but also higher damping capacity than the conventional annealed Fe-17.5Mn alloy under argon atmosphere. The existence of only ferrite shell on the surface accounts for the better corrosion in the sandwich Fe-17.5Mn alloy. The better damping capacity in the sandwich Fe-17.5Mn alloy is owed to more stacking faults inside both ɛ martensite and γ austenite induced by the stress from ferrite shell. Vacuum annealing is a new way to improve the corrosion resistance and damping capacity of Fe-Mn damping alloys.

  20. Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between Ni-W alloys and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si substrates, and followed by either furnace annealing (200--900 0 C) or ion mixing (2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems

  1. Hierarchical Network Design Using Simulated Annealing

    DEFF Research Database (Denmark)

    Thomadsen, Tommy; Clausen, Jens

    2002-01-01

    networks are described and a mathematical model is proposed for a two level version of the hierarchical network problem. The problem is to determine which edges should connect nodes, and how demand is routed in the network. The problem is solved heuristically using simulated annealing which as a sub......-algorithm uses a construction algorithm to determine edges and route the demand. Performance for different versions of the algorithm are reported in terms of runtime and quality of the solutions. The algorithm is able to find solutions of reasonable quality in approximately 1 hour for networks with 100 nodes....

  2. Annealing relaxation of ultrasmall gold nanostructures

    Science.gov (United States)

    Chaban, Vitaly

    2015-01-01

    Except serving as an excellent gift on proper occasions, gold finds applications in life sciences, particularly in diagnostics and therapeutics. These applications were made possible by gold nanoparticles, which differ drastically from macroscopic gold. Versatile surface chemistry of gold nanoparticles allows coating with small molecules, polymers, biological recognition molecules. Theoretical investigation of nanoscale gold is not trivial, because of numerous metastable states in these systems. Unlike elsewhere, this work obtains equilibrium structures using annealing simulations within the recently introduced PM7-MD method. Geometries of the ultrasmall gold nanostructures with chalcogen coverage are described at finite temperature, for the first time.

  3. Binary Sparse Phase Retrieval via Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Wei Peng

    2016-01-01

    Full Text Available This paper presents the Simulated Annealing Sparse PhAse Recovery (SASPAR algorithm for reconstructing sparse binary signals from their phaseless magnitudes of the Fourier transform. The greedy strategy version is also proposed for a comparison, which is a parameter-free algorithm. Sufficient numeric simulations indicate that our method is quite effective and suggest the binary model is robust. The SASPAR algorithm seems competitive to the existing methods for its efficiency and high recovery rate even with fewer Fourier measurements.

  4. Simulated annealing for tensor network states

    International Nuclear Information System (INIS)

    Iblisdir, S

    2014-01-01

    Markov chains for probability distributions related to matrix product states and one-dimensional Hamiltonians are introduced. With appropriate ‘inverse temperature’ schedules, these chains can be combined into a simulated annealing scheme for ground states of such Hamiltonians. Numerical experiments suggest that a linear, i.e., fast, schedule is possible in non-trivial cases. A natural extension of these chains to two-dimensional settings is next presented and tested. The obtained results compare well with Euclidean evolution. The proposed Markov chains are easy to implement and are inherently sign problem free (even for fermionic degrees of freedom). (paper)

  5. Fourier-transforming with quantum annealers

    Directory of Open Access Journals (Sweden)

    Itay eHen

    2014-07-01

    Full Text Available We introduce a set of quantum adiabatic evolutions that we argue may be used as `building blocks', or subroutines, in the onstruction of an adiabatic algorithm that executes Quantum Fourier Transform (QFT with the same complexity and resources as its gate-model counterpart. One implication of the above construction is the theoretical feasibility of implementing Shor's algorithm for integer factorization in an optimal manner, and any other algorithm that makes use of QFT, on quantum annealing devices. We discuss the possible advantages, as well as the limitations, of the proposed approach as well as its relation to traditional adiabatic quantum computation.

  6. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  7. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  8. Radiation damage structure in irradiated and annealed 440 WWER-Type reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Kocik, J.; Keilova, E.

    1993-01-01

    A review of irradiation damages in WWER-type RPV steels based on conventional Transmission Electron Microscopy investigations in a power reactor and a research reactor, is presented; the samples consist in Cr-Mo-V ferritic steel (15Kh2MFA type). The visible part of radiation-induced defects consists of very fine vanadium carbide precipitates, small dislocation loops and black dots (presumably corresponding to clusters and particle embryos formed from vacancies and solute-atoms (vanadium, copper, phosphorus) and carbon associated with vanadium. Radiation-induced defects are concentrated at dislocation substructure during irradiation in a power reactor, revealing the role of radiation-enhanced diffusion in damage structure forming process. Contrarily, the distribution of defects resulting from annealing of specimens irradiated in the research reactor is pre-determined by an homogenous distribution of radiation-induced defects prior to annealing. Increasing the number of re-irradiation and annealing cycles, the amount of dislocation loops among all defects seems to be growing. Simultaneously, the dislocation substructure recovers considerably. (authors). 14 refs., 11 figs., 3 tabs

  9. Radiation damage structure in irradiated and annealed 440 WWER-Type reactor pressure vessel steels

    Energy Technology Data Exchange (ETDEWEB)

    Kocik, J; Keilova, E [Czech Nuclear Society, Prague (Czech Republic)

    1994-12-31

    A review of irradiation damages in WWER-type RPV steels based on conventional Transmission Electron Microscopy investigations in a power reactor and a research reactor, is presented; the samples consist in Cr-Mo-V ferritic steel (15Kh2MFA type). The visible part of radiation-induced defects consists of very fine vanadium carbide precipitates, small dislocation loops and black dots (presumably corresponding) to clusters and particle embryos formed from vacancies and solute-atoms (vanadium, copper, phosphorus) and carbon associated with vanadium. Radiation-induced defects are concentrated at dislocation substructure during irradiation in a power reactor, revealing the role of radiation-enhanced diffusion in damage structure forming process. Contrarily, the distribution of defects resulting from annealing of specimens irradiated in the research reactor is pre-determined by an homogenous distribution of radiation-induced defects prior to annealing. Increasing the number of re-irradiation and annealing cycles, the amount of dislocation loops among all defects seems to be growing. Simultaneously, the dislocation substructure recovers considerably. (authors). 14 refs., 11 figs., 3 tabs.

  10. The changes of ADI structure during high temperature annealing

    OpenAIRE

    A. Krzyńska; M. Kaczorowski

    2010-01-01

    The results of structure investigations of ADI during it was annealing at elevated temperature are presented. Ductile iron austempered at temperature 325oC was then isothermally annealed 360 minutes at temperature 400, 450, 500 and 550oC. The structure investigations showed that annealing at these temperatures caused substantial structure changes and thus essential hardness decrease, which is most useful property of ADI from point of view its practical application. Degradation advance of the ...

  11. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  12. Magnetoimpedance of stress and/or field annealed Fe73.5Cu1Nb3Si15.5B7 amorphous and nanocrystalline ribbon

    International Nuclear Information System (INIS)

    Miguel, C.; Zhukov, A.P.; Gonzalez, J.

    2003-01-01

    Magnetoimpedance (MI) response of as-cast and annealed Fe 73.5 Cu 1 Nb 3 Si 15.5 B 7 amorphous alloy ribbon has been investigated. The thermal treatments were performed by current annealing technique (density 45 A/mm 2 during 1-120 min) under the action of a tensile stress of 500 MPa and/or an axial magnetic field of 750 A/m. For short annealing time (less than 5 min), the three kinds of treatment induced an uniaxial magnetic anisotropy in the amorphous state with a maximum of MI of 15%, while for long annealing the nanocrystallization process occurs with larger MI effect of around 22%. This MI behaviour is explained taking into account the role of the induced magnetic anisotropy and the microstructural changes owing to the thermal treatments

  13. Temperature distribution study in flash-annealed amorphous ribbons

    International Nuclear Information System (INIS)

    Moron, C.; Garcia, A.; Carracedo, M.T.

    2003-01-01

    Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

  14. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  15. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  16. Dosimetric characteristics of muscovite mineral studied under different annealing conditions

    International Nuclear Information System (INIS)

    Kalita, J M; Wary, G

    2015-01-01

    The annealing effect on the thermoluminescence (TL) characteristics of x-ray irradiated muscovite mineral relevant to dosimetry has been studied. For un-annealed and 473 K annealed samples an isolated TL peak has been observed at around 347 K; however, annealing at 573, 673 and 773 K two composite peaks have been recorded at around 347 and 408 K. Kinetic analysis reveals that there is a trap level at a depth of 0.71 eV, and due to annealing at 573 K (or above), a new trap level generates at 1.23 eV. The dosimetric characteristics, such as dose response, fading and reproducibility, have been studied in detail for all types of samples. The highest linear dose response has been observed from 10 to 2000 mGy in the 773 K annealed sample. Due to generation of the deep trap level, fading is found to reduce significantly just after annealing above 573 K. Reproducibility analysis shows that after 10 cycles of reuse the coefficient of variations in the results for 60, 180 and 1000 mGy dose irradiated 773 K annealed samples are found to be 1.78%, 1.37% and 1.58%, respectively. These analyses demand that after proper annealing muscovite shows important dosimetric features that are essentially required for a thermoluminescence dosimeter (TLD). (paper)

  17. Annealing behavior of alpha recoil tracks in phlogopite

    International Nuclear Information System (INIS)

    Gao Shaokai; Yuan Wanming; Dong Jinquan; Bao Zengkuan

    2005-01-01

    Alpha recoil tracks (ARTs) formed during the a-decay of U, Th as well as their daughter nuclei are used as a new dating method which is to some extent a complementarity of fission track dating due to its ability to determine the age of young mineral. ARTs can be observable under phase-contrast interference microscope through chemical etching. In order to study the annealing behavior of ARTs in phlogopite, two methods of annealing experiments were executed. Samples were annealed in the electronic tube furnace at different temperatures ranging from 250 degree C to 450 degree C in steps of 50 degree C. For any given annealing temperature, different annealing times were used until total track fading were achieved. It is found that ARTs anneal much more easily than fission tracks, the annealing ratio increase non-linearly with annealing time and temperature. Using the Arrhenius plot, an activation energy of 0.68ev is finally found for 100% removal of ARTs, which is less than the corresponding value for fission tracks (FTs). Through extending the annealing time to geological time, a much lower temperature range of the sample's cooling history can be got.

  18. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  19. Plasticity margin recovery during annealing after cold deformation

    International Nuclear Information System (INIS)

    Bogatov, A.A.; Smirnov, S.V.; Kolmogorov, V.L.

    1978-01-01

    Restoration of the plasticity margin in steel 20 after cold deformation and annealing at 550 - 750 C and soaking for 5 - 300 min was investigated. The conditions of cold deformation under which the metal acquires microdefects unhealed by subsequent annealing were determined. It was established that if the degree of utilization of the plasticity margin is psi < 0.5, the plasticity margin in steel 20 can be completely restored by annealing. A mathematical model of restoration of the plasticity margin by annealing after cold deformation was constructed. A statistical analysis showed good agreement between model and experiment

  20. Mean Field Analysis of Quantum Annealing Correction.

    Science.gov (United States)

    Matsuura, Shunji; Nishimori, Hidetoshi; Albash, Tameem; Lidar, Daniel A

    2016-06-03

    Quantum annealing correction (QAC) is a method that combines encoding with energy penalties and decoding to suppress and correct errors that degrade the performance of quantum annealers in solving optimization problems. While QAC has been experimentally demonstrated to successfully error correct a range of optimization problems, a clear understanding of its operating mechanism has been lacking. Here we bridge this gap using tools from quantum statistical mechanics. We study analytically tractable models using a mean-field analysis, specifically the p-body ferromagnetic infinite-range transverse-field Ising model as well as the quantum Hopfield model. We demonstrate that for p=2, where the phase transition is of second order, QAC pushes the transition to increasingly larger transverse field strengths. For p≥3, where the phase transition is of first order, QAC softens the closing of the gap for small energy penalty values and prevents its closure for sufficiently large energy penalty values. Thus QAC provides protection from excitations that occur near the quantum critical point. We find similar results for the Hopfield model, thus demonstrating that our conclusions hold in the presence of disorder.

  1. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Prins, Johan F.

    2001-01-01

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  2. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    Ladislav Rosocha

    2015-07-01

    Full Text Available Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem.Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a well-known method from statistical thermodynamics. We define hard constraints, which are linked to legal and working regulations, and minimize the violations of soft constraints, which are related to the quality of work, psychic, and work-life balance of staff.Findings: On a sample of 60 physicians and nurses from gynecology department we generated monthly schedules and optimized their preferences in terms of soft constraints. Our results indicate that the final value of objective function optimized by proposed algorithm is more than 18-times better in violations of soft constraints than initially generated random schedule that satisfied hard constraints.Research Limitation/implication: Even though the global optimality of final outcome is not guaranteed, desirable solutionwas obtained in reasonable time. Originality/Value of paper: We show that designed algorithm is able to successfully generate schedules regarding hard and soft constraints. Moreover, presented method is significantly faster than standard schedule generation and is able to effectively reschedule due to the local neighborhood search characteristics of simulated annealing.

  3. Magnetic field annealing for improved creep resistance

    Science.gov (United States)

    Brady, Michael P.; Ludtka, Gail M.; Ludtka, Gerard M.; Muralidharan, Govindarajan; Nicholson, Don M.; Rios, Orlando; Yamamoto, Yukinori

    2015-12-22

    The method provides heat-resistant chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloys having improved creep resistance. A precursor is provided containing preselected constituents of a chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloy, at least one of the constituents for forming a nanoscale precipitate MaXb where M is Cr, Nb, Ti, V, Zr, or Hf, individually and in combination, and X is C, N, O, B, individually and in combination, a=1 to 23 and b=1 to 6. The precursor is annealed at a temperature of 1000-1500.degree. C. for 1-48 h in the presence of a magnetic field of at least 5 Tesla to enhance supersaturation of the M.sub.aX.sub.b constituents in the annealed precursor. This forms nanoscale M.sub.aX.sub.b precipitates for improved creep resistance when the alloy is used at service temperatures of 500-1000.degree. C. Alloys having improved creep resistance are also disclosed.

  4. CrCuAgN PVD nanocomposite coatings: Effects of annealing on coating morphology and nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xingguang, E-mail: xingguangliu1@gmail.com [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Iamvasant, Chanon, E-mail: ciamvasant1@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Liu, Chang, E-mail: chang.liu@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Matthews, Allan, E-mail: allan.matthews@manchester.ac.uk [Pariser Building - B24 ICAM, School of Materials, The University of Manchester, Manchester, M13 9PL (United Kingdom); Leyland, Adrian, E-mail: a.leyland@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

    2017-01-15

    Highlights: • Coatings with nitrogen content up to 16 at.% exhibit a metallic Cr solid solution, even after post-coat annealing at 300 °C and 500 °C. • At higher N/Cr atomic ratios (approaching Cr{sub 2}N stoichiometry), chromium was still inclined to exist in solid solution with nitrogen, rather than as a ceramic nitride phase, even after annealing at 500 °C. • Transportation of Cu and Ag to the surface depends on annealing temperature, annealing duration, nitrogen concentration and ‘global’ Cu + Ag concentration. • Incorporation of copper appears to be a powerful strategy to enhance Ag mobility at low concentration (∼3 at.% Ag in this study) under moderately high service temperature. • A significant decrease in friction coefficient was obtained at room temperature after annealing, or during sliding wear testing at elevated temperature. - Abstract: CrCuAgN PVD nanocomposite coatings were produced using pulsed DC unbalanced magnetron sputtering. This investigation focuses on the effects of post-coat annealing on the surface morphology, phase composition and nanostructure of such coatings. In coatings with nitrogen contents up to 16 at.%, chromium exists as metallic Cr with N in supersaturated solid solution, even after 300 °C and 500 °C post-coat annealing. Annealing at 300 °C did not obviously change the phase composition of both nitrogen-free and nitrogen-containing coatings; however, 500 °C annealing resulted in significant transformation of the nitrogen-containing coatings. The formation of Ag aggregates relates to the (Cu + Ag)/Cr atomic ratio (threshold around 0.2), whereas the formation of Cu aggregates relates to the (Cu + Ag + N)/Cr atomic ratio (threshold around 0.5). The primary annealing-induced changes were reduced solubility of Cu, Ag and N in Cr, and the composition altering from a mixed ultra-fine nanocrystalline and partly amorphous phase constitution to a coarser, but still largely nanocrystalline structure. It was also

  5. Microstructure and mechanical properties of neutron irradiated OFHC-copper before and after post-irradiation annealing

    DEFF Research Database (Denmark)

    Singh, B.N.; Edwards, D.J.; Toft, P.

    2001-01-01

    of recovery depends on the irradiation dose level. However, the post-irradiation annealing eliminates theproblem of yield drop and reinstates enough uniform elongation to render the material useful again. These results are discussed in terms of the cascade induced source hardening (CISH) and the dispersed...

  6. Evaluation of mode purity of ordinary and extraordinary modes by fixed elliptically polarized wave for ECH and ECCD

    International Nuclear Information System (INIS)

    Saigusa, Mikio

    1991-08-01

    Mode separation ratio from an arbitrary elliptically polarized electromagnetic wave to an ordinary and an extraordinary modes on a plasma surface for oblique launch is evaluated quantitatively for designing an electron cyclotron current drive (ECCD) antenna. An optimized elliptical polarization for the wide range of injection angles and magnetic fields is firstly investigated for ECCD and ECH experiments. (author)

  7. The Roles of Teachers' Work Motivation and Teachers' Job Satisfaction in the Organizational Commitment in Extraordinary Schools

    Science.gov (United States)

    Tentama, Fatwa; Pranungsari, Dessy

    2016-01-01

    Teachers' work motivation and teachers' job satisfaction are the factors influencing the organizational commitment. This research is aimed to empirically examine the roles of teachers' work motivation and teachers' job satisfaction in the commitment of the organization in extraordinary schools. The subjects of the research are the teachers in…

  8. Effects of post-irradiation annealing on the transformation behavior of Ti-Ni alloys

    International Nuclear Information System (INIS)

    Kimura, A.; Tsuruga, H.; Morimura, T.; Misawa, T.; Miyazaki, S.

    1993-01-01

    Recovery processes of martensitic transformation of neutron irradiated Ti-50.0, 50.5 and 51.0 at.%Ni alloys during post-irradiation annealing were investigated by means of differential scanning calorimetry (DSC), tensile tests and transmission electron microscope (TEM) observations. Neutron irradiation up to a fluence of 1.2x10 24 n/cm 2 at 333 K suppressed the martensitic transformation as well as the stress-induced martensitic transformation of these alloys above 150 K. The TEM observations revealed that the disordered zones containing small defect clusters in high density were formed in the neutron irradiated Ti-Ni alloys. The DSC measurements also showed that the post-irradiation annealing caused recovery of the transformation of which the progress depended on the annealing temperature and period. A significant retardation of the recovery was recognized in the Ti-51.0 at.%Ni alloy in comparison with the Ti-50.0 at.%Ni alloy. From the shifts in the transformation temperature upon isothermal annealing at various annealing temperatures, the activation energies of the recovery process of the transformation in the neutron irradiated Ti-50.0 and 51.0 at.%Ni alloys were evaluated by a cross-cut method to be 1.2 eV and 1.5 eV, respectively. The recovery of the transformation was ascribed to the re-ordering resulting from decomposition of vacancy clusters, and those obtained values of the activation energy were considered to be the sum of the migration energy of vacancy and the binding energy of vacancy-vacancy cluster. The retardation of the recovery in the Ti-51.0 at%Ni alloy was interpreted in terms of large binding energy in this alloy due to the off-stoichiometry. (author)

  9. Mechanical behavior of multipass welded joint during stress relief annealing

    International Nuclear Information System (INIS)

    Ueda, Yukio; Fukuda, Keiji; Nakacho, Keiji; Takahashi, Eiji; Sakamoto, Koichi.

    1978-01-01

    An investigation into mechanical behavior of a multipass welded joint of a pressure vessel during stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analysis, the thermal elastic-plastic creep theory developed by the authors was applied. The behavior of multipass welded joints during the entire thermal cycle, from welding to stress relief annealing, was consistently analyzed by this theory. The results of the analysis show a good, fundamentally coincidence with the experimental findings. The outline of the results and conclusions is as follows. (1) In the case of the material (2 1/4Cr-1Mo steel) furnished in this study, the creep strain rate during stress relief annealing below 575 0 C obeys the strain-hardening creep law using the transient creep and the one above 575 0 C obeys the power creep law using the stational creep. (2) In the transverse residual stress (σsub(x)) distribution after annealing, the location of the largest tensile stress on the top surface is about 15 mm away from the toe of weld, and the largest at the cross section is just below the finishing bead. These features are similar to those of welding residual stresses. But the stress distribution after annealing is smoother than one from welding. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature. For example, most of residual stresses are relieved at the heating stage with a heating rate of 30 0 C/hr. to 100 0 C/hr. if the annealing temperature is 650 0 C, but if the annealing temperature is 550 0 C, the annealing is not effective even with a longer holding time. (4) In the case of multipass welding residual stresses studied in this paper, the behaviors of high stresses during annealing are approximated by ones during anisothermal relaxation. (auth.)

  10. Optimization of urea-EnFET based on Ta2O5 layer with post annealing.

    Science.gov (United States)

    Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G; Lai, Chao-Sung

    2011-01-01

    In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si(3)N(4) sensing layer. The ISFETs and EnFETs with annealed Ta(2)O(5) sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pC(urea), from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta(2)O(5) and Si(3)N(4) sensing membranes.

  11. Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing

    Directory of Open Access Journals (Sweden)

    Chao-Sung Lai

    2011-04-01

    Full Text Available In this study, the urea-enzymatic field effect transistors (EnFETs were investigated based on pH-ion sensitive field effect transistors (ISFETs with tantalum pentoxide (Ta2O5 sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12 and also corresponded to the highest urea sensitivity (61 mV/pCurea, from 1 mM to 7.5 mM. Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta2O5 and Si3N4 sensing membranes.

  12. A study on electric properties for pulse laser annealing of ITO film after wet etching

    International Nuclear Information System (INIS)

    Lee, C.J.; Lin, H.K.; Li, C.H.; Chen, L.X.; Lee, C.C.; Wu, C.W.; Huang, J.C.

    2012-01-01

    The electric properties of ITO thin film after UV or IR laser annealing and wet etching was analyzed via grazing incidence in-plane X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectra and residual stress measurement. The laser annealing process readily induced microcracks or quasi-microcracks on the ITO thin film due to the residual tension stress of crystalline phase transformation between irradiated and non-irradiated areas, and these defects then became the preferred sites for a higher etching rate, resulting in discontinuities in the ITO thin film after the wet etching process. The discontinuities in the residual ITO thin film obstruct carrier transmission and further result in electric failure. - Highlights: ► The laser annealing process induces microcracks in InSnO 2 thin films. ► The defects result in higher local etching rate during wet etching. ► These process defects originate from residual tension stress. ► Decreasing the thermal shock is suggested in order to reduce these process defects.

  13. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  14. Coupled Quantum Fluctuations and Quantum Annealing

    Science.gov (United States)

    Hormozi, Layla; Kerman, Jamie

    We study the relative effectiveness of coupled quantum fluctuations, compared to single spin fluctuations, in the performance of quantum annealing. We focus on problem Hamiltonians resembling the the Sherrington-Kirkpatrick model of Ising spin glass and compare the effectiveness of different types of fluctuations by numerically calculating the relative success probabilities and residual energies in fully-connected spin systems. We find that for a small class of instances coupled fluctuations can provide improvement over single spin fluctuations and analyze the properties of the corresponding class. Disclaimer: This research was funded by ODNI, IARPA via MIT Lincoln Laboratory under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  15. Angular filter refractometry analysis using simulated annealing.

    Science.gov (United States)

    Angland, P; Haberberger, D; Ivancic, S T; Froula, D H

    2017-10-01

    Angular filter refractometry (AFR) is a novel technique used to characterize the density profiles of laser-produced, long-scale-length plasmas [Haberberger et al., Phys. Plasmas 21, 056304 (2014)]. A new method of analysis for AFR images was developed using an annealing algorithm to iteratively converge upon a solution. A synthetic AFR image is constructed by a user-defined density profile described by eight parameters, and the algorithm systematically alters the parameters until the comparison is optimized. The optimization and statistical uncertainty calculation is based on the minimization of the χ 2 test statistic. The algorithm was successfully applied to experimental data of plasma expanding from a flat, laser-irradiated target, resulting in an average uncertainty in the density profile of 5%-20% in the region of interest.

  16. Inferring hierarchical clustering structures by deterministic annealing

    International Nuclear Information System (INIS)

    Hofmann, T.; Buhmann, J.M.

    1996-01-01

    The unsupervised detection of hierarchical structures is a major topic in unsupervised learning and one of the key questions in data analysis and representation. We propose a novel algorithm for the problem of learning decision trees for data clustering and related problems. In contrast to many other methods based on successive tree growing and pruning, we propose an objective function for tree evaluation and we derive a non-greedy technique for tree growing. Applying the principles of maximum entropy and minimum cross entropy, a deterministic annealing algorithm is derived in a meanfield approximation. This technique allows us to canonically superimpose tree structures and to fit parameters to averaged or open-quote fuzzified close-quote trees

  17. Quenching and annealing in the minority game

    Science.gov (United States)

    Burgos, E.; Ceva, Horacio; Perazzo, R. P. J.

    2001-05-01

    We study the bar attendance model (BAM) and a generalized version of the minority game (MG) in which a number of agents self organize to match an attendance that is fixed externally as a control parameter. We compare the probabilistic dynamics used in the MG with one that we introduce for the BAM that makes better use of the same available information. The relaxation dynamics of the MG leads the system to long lived, metastable (quenched) configurations in which adaptive evolution stops in spite of being far from equilibrium. On the contrary, the BAM relaxation dynamics avoids the MG glassy state, leading to an equilibrium configuration. Finally, we introduce in the MG model the concept of annealing by defining a new procedure with which one can gradually overcome the metastable MG states, bringing the system to an equilibrium that coincides with the one obtained with the BAM.

  18. PENJADWALAN FLOWSHOP DENGAN MENGGUNAKAN SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    Muhammad Firdaus

    2015-04-01

    Full Text Available This article apply a machine scheduling technique, named Simulate Annealing (SA to schedule 8 jobs and 5 machines to minimize makespan. A flowshop production flow is chosen as a case study to collect data and attempted to reduce jobs’ makespan. This article also does a sensitivity analysis to explore the implication of the changes of SA parameters as temperature. The results shows that the completion time of the jobs uses SA algoritm can decrease the completion time of the jobs, about 5 hours lower than the existing method. Moreover, total idle time of the machines is also reduced by 2.18 per cent using SA technique. Based on the sensitivity analysis, it indicates that there is a significant relationship between the changes of temperatures and makespan and computation time.

  19. Annealed n-vector p spin model

    International Nuclear Information System (INIS)

    Taucher, T.; Frankel, N.E.

    1992-01-01

    A disordered n-vector model with p spin interactions is introduced and studied in mean field theory for the annealed case. The complete solutions for the cases n = 2 and n = 3, is presented and explicit order parameter equations is given for all the stable solutions for arbitrary n. For all n and p was found on stable high temperature phase and one stable low temperature phase. The phase transition is of first order. For n = 2, it is continuous in the order parameters for p ≤ 4 and has a jump discontinuity in the order parameters if p > 4. For n = 3, it has a jump discontinuity in the order parameters for all p. 11 refs., 4 figs

  20. Note: A wide temperature range MOKE system with annealing capability.

    Science.gov (United States)

    Chahil, Narpinder Singh; Mankey, G J

    2017-07-01

    A novel sample stage integrated with a longitudinal MOKE system has been developed for wide temperature range measurements and annealing capabilities in the temperature range 65 K temperatures without adversely affecting the cryostat and minimizes thermal drift in position. In this system the hysteresis loops of magnetic samples can be measured simultaneously while annealing the sample in a magnetic field.

  1. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  2. Annealing behavior of solution grown polyethylene single crystals

    NARCIS (Netherlands)

    Loos, J.; Tian, M.

    2006-01-01

    The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

  3. Principal and secondary luminescence lifetime components in annealed natural quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

    2008-01-01

    Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

  4. Annealing of KDP crystals in vacuum and under pressure

    International Nuclear Information System (INIS)

    Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

    1997-01-01

    The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

  5. Effect of heat moisture treatment and annealing on physicochemical ...

    African Journals Online (AJOL)

    Red sorghum starch was physically modified by annealing and heat moisture treatment. The swelling power and solubility increased with increasing temperature range (60-90°), while annealing and heatmoisture treatment decreased swelling power and solubility of starch. Solubility and swelling were pH dependent with ...

  6. Nitrogen annealing of zirconium or titanium metals and their alloys

    International Nuclear Information System (INIS)

    Eucken, C.M.

    1982-01-01

    A method is described of continuously nitrogen annealing zirconium and titanium metals and their alloys at temperatures at from 525 0 to 875 0 C for from 1/2 minute to 15 minutes. The examples include the annealing of Zircaloy-4. (U.K.)

  7. Application of annealing for extension of WWER vessel lives

    International Nuclear Information System (INIS)

    Badanin, V.; Dragunow, Yu.G.; Fedorov, V.; Gorynin, I.; Nickolaev, V.

    1992-01-01

    The safe operation of nuclear power plants (NPP) is dependent upon the assurance that the reactor pressure vessel will not fail in a brittle manner when the effects of radiation embrittlement are taken into account. The recovery of the properties of the irradiated materials is an important way of extending the operating life of a reactor vessel. The intent of this paper is to demonstrate the efficiency of thermal annealing for the recovery of reactor vessel material properties and to present the implications for extended service life. In order to substantiate the application of annealing to the extensior of the service life of vessels, detailed investigations were conducted which involved thermal annealing temperature and time, fast neutron fluence, and metallurgical factors (i.e. impurity contents) on the recovery of properties after the annealing of irradiated materials. Similar studies were continued to determine predictive methods for radiation embrittlement after repeated annealings. In May 1987 the first pilot annealing of a commercial reactor vessel (Novo-Voronezhskaya, III, NPP) was performed. The development of the annealing equipment and investigations performed to test the annealing process proved successful, and an improved safe operation for the reactor vessel was thus atttained providing for an extended service life. (orig.)

  8. Response of neutron-irradiated RPV steels to thermal annealing

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the fracture toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results of work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response of several irradiated RPV steels

  9. Improved perovskite phototransistor prepared using multi-step annealing method

    Science.gov (United States)

    Cao, Mingxuan; Zhang, Yating; Yu, Yu; Yao, Jianquan

    2018-02-01

    Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm2V-1s-1 for holes (electrons), which increases to 1.01 (0.54) cm2V-1s-1 for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 μs. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

  10. Effects of post annealing on the microstructure, mechanical properties and cavitation erosion behavior of arc-sprayed FeNiCrBSiNbW coatings

    International Nuclear Information System (INIS)

    Lin, Jinran; Wang, Zehua; Lin, Pinghua; Cheng, Jiangbo; Zhang, Xin; Hong, Sheng

    2015-01-01

    Highlights: • FeNiCrBSiNbW coatings were prepared by arc spraying process. • Microstructural changes of the coatings were investigated by TEM. • As-sprayed coating had higher cavitation erosion resistance than annealed coatings. • The mechanism for annealing-induced change in cavitation erosion was discussed. - Abstract: FeNiCrBSiNbW coatings were fabricated via arc spraying process and were subsequently annealed at 450, 550 and 650 °C for 1 h to study the effect of annealing treatment on the microstructure, mechanical properties and cavitation erosion behavior. Microstructure was studied using scanning and transmission electron microscopy. The results showed that oxides, fine crystalline particles and borides were formed after annealing at 650 °C. With increasing annealing temperature, the coatings showed reductions in porosity and fracture toughness, and an increase in microhardness. The cavitation erosion behavior of the coatings was investigated in distilled water. The results showed that the cavitation erosion resistance of the coatings decreased with increasing annealing temperature, and the as-sprayed coating exhibited the best cavitation erosion resistance among the four kinds of coatings. This was attributed to the good fracture toughness, high amorphous phase content and the absence of oxides in the as-sprayed coating

  11. In-situ grazing incidence X-ray diffraction measurements of relaxation in Fe/MgO/Fe epitaxial magnetic tunnel junctions during annealing

    Energy Technology Data Exchange (ETDEWEB)

    Eastwood, D.S. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Ali, M.; Hickey, B.J. [Department of Physics and Astronomy, University of Leeds, Leeds LS2 1JT (United Kingdom); Tanner, B.K., E-mail: b.k.tanner@dur.ac.uk [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom)

    2013-12-15

    The relaxation of Fe/MgO/Fe tunnel junctions grown epitaxially on (001) MgO substrates has been measured by in-situ grazing incidence in-plane X-ray diffraction during the thermal annealing cycle. We find that the Fe layers are fully relaxed and that there are no irreversible changes during annealing. The MgO tunnel barrier is initially strained towards the Fe but on annealing, relaxes and expands towards the bulk MgO value. The strain dispersion is reduced in the MgO by about 40% above 480 K post-annealing. There is no significant change in the “twist” mosaic. Our results indicate that the final annealing stage of device fabrication, crucial to attainment of high TMR, induces substantial strain relaxation at the MgO barrier/lower Fe electrode interface. - Highlights: • Lattice relaxation of Fe/MgO/Fe epitaxial magnetic tunnel junctions measured. • In-plane lattice parameter of Fe equal to bulk value; totally relaxed. • MgO barrier initially strained towards the Fe but relaxes on annealing. • Reduction in strain dispersion in the MgO barrier by 40% above about 470 K. • No change in the in-plane “twist” mosaic throughout the annealing cycle.

  12. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    Science.gov (United States)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  13. Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Tuomisto, F.; Slotte, J.

    2011-01-01

    Evolution of the chemical surroundings of vacancy complexes in Sb-doped ([Sb] = 2 × 1018 and 2 × 1019 cm−3) Si0.8Ge0.2 was studied with positron annihilation spectroscopy in Doppler broadening mode. The study was performed by annealing the samples both isochronally and isothermally. Defect...... evolution was observed at the temperature range 450–650 K. Both treatments were shown to induce changes in the chemical surroundings of the E-centers via introduction of Ge near the defects. Moreover, Sb was found to hinder these changes by stabilizing the E-centers and thus preventing them from finding Ge....... The stable state reached after the anneals was found to differ from that measured from an as-grown sample. This difference was deemed to be the result of Ge gathering in small clusters during the annealing thus breaking the initially random Ge distribution....

  14. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    International Nuclear Information System (INIS)

    Burke, M.G.; Freyer, P.D.; Mager, T.R.

    1993-01-01

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ''precipitation-type'' and a ''damage-type'' component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs

  15. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Burke, M G; Freyer, P D; Mager, T R

    1994-12-31

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ``precipitation-type`` and a ``damage-type`` component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs.

  16. Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

    International Nuclear Information System (INIS)

    Ederth, J.; Hultaaker, A.; Niklasson, G.A.; Granqvist, C.G.; Heszler, P.; Doorn, A.R. van; Jongerius, M.J.; Burgard, D.

    2005-01-01

    Electrical and optical properties were investigated in porous thin films consisting of In 2 O 3 :Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap. (orig.)

  17. Effects of casting and post casting annealing on xylene isomer transport properties of Torlon® 4000T films

    KAUST Repository

    Chafin, Raymond; Lee, Jong Suk; Koros, William J.

    2010-01-01

    Procedures for Torlon® 4000T membrane formation were developed to provide attractive and repeatable xylene separation properties. Torlon® 4000T membrane films cast by our method were investigated in terms of thermally induced imidization, molecular weight enhancement, and solvent removal. After development of the Torlon® 4000T casting procedure, pervaporation of a xylene mixture (i.e. 30% para-xylene, 30% meta-xylene, 30% ortho-xylene, and 10% ethylbenzene) was performed in both Torlon® 4000T and post casting annealed Torlon® 4000T films. The xylene pervaporation in annealed Torlon® 4000T film at 200°C gave a permeability of 0.25 Barrer and a selectivity of 3.1 (para/ortho) and 2.1 (para/meta) respectively. A so-called " permeability collapse" reflecting an accelerated reduction in the free volume is consistent with significant temperature-induced changes in the films observed after thermal annealing at 300°C. This conditioning effect is induced by a combination of heat treatment and the presence of the interacting aromatic penetrants. Optical methods were used to verify that the density of annealed samples exposed to xylene for 5 days eventually increased, suggesting that the membrane is originally swollen upon initial xylene exposure, and then relaxes to a more densified, and more discriminating state. © 2010 Elsevier Ltd.

  18. Effects of casting and post casting annealing on xylene isomer transport properties of Torlon® 4000T films

    KAUST Repository

    Chafin, Raymond

    2010-07-01

    Procedures for Torlon® 4000T membrane formation were developed to provide attractive and repeatable xylene separation properties. Torlon® 4000T membrane films cast by our method were investigated in terms of thermally induced imidization, molecular weight enhancement, and solvent removal. After development of the Torlon® 4000T casting procedure, pervaporation of a xylene mixture (i.e. 30% para-xylene, 30% meta-xylene, 30% ortho-xylene, and 10% ethylbenzene) was performed in both Torlon® 4000T and post casting annealed Torlon® 4000T films. The xylene pervaporation in annealed Torlon® 4000T film at 200°C gave a permeability of 0.25 Barrer and a selectivity of 3.1 (para/ortho) and 2.1 (para/meta) respectively. A so-called " permeability collapse" reflecting an accelerated reduction in the free volume is consistent with significant temperature-induced changes in the films observed after thermal annealing at 300°C. This conditioning effect is induced by a combination of heat treatment and the presence of the interacting aromatic penetrants. Optical methods were used to verify that the density of annealed samples exposed to xylene for 5 days eventually increased, suggesting that the membrane is originally swollen upon initial xylene exposure, and then relaxes to a more densified, and more discriminating state. © 2010 Elsevier Ltd.

  19. Use of superheated steam to anneal the reactor pressure vessel

    International Nuclear Information System (INIS)

    Porowski, J.S.

    1994-01-01

    Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 degrees F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 degrees F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors

  20. Crystallization degree change of expanded graphite by milling and annealing

    International Nuclear Information System (INIS)

    Tang Qunwei; Wu Jihuai; Sun Hui; Fang Shijun

    2009-01-01

    Expanded graphite was ball milled with a planetary mill in air atmosphere, and subsequently thermal annealed. The samples were characterized by using X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was found that in the milling initial stage (less than 12 h), the crystallization degree of the expanded graphite declined gradually, but after milling more than 16 h, a recrystallization of the expanded graphite toke place, and ordered nanoscale expanded graphite was formed gradually. In the annealing initial stage, the non-crystallization of the graphite occurred, but, beyond an annealing time, recrystallizations of the graphite arise. Higher annealing temperature supported the recrystallization. The milled and annealed expanded graphite still preserved the crystalline structure as raw material and hold high thermal stability.

  1. Temperature dependence of the extraordinary Hall effect in magnetic granular alloys

    International Nuclear Information System (INIS)

    Granovsky, A.; Kalitsov, A.; Khanikaev, A.; Sato, H.; Aoki, Y.

    2003-01-01

    We present the results of theoretical investigation of the temperature dependence of the extraordinary Hall effect (EHE) in granular metal-metal and metal-insulator alloys in the case of electron-phonon scattering at high temperatures. Skew scattering is assumed to be the dominant mechanism of the EHE. The calculations were carried out using Zhang-Levy model and the effective-medium approximation. The single-site electron-phonon interaction model was considered by analogy to that one in the theory of disordered alloys. In the case of strong spin-dependent scattering there is an additional term in the temperature dependence of the EHE coefficient of magnetic granular alloys in comparison with that for bulk ferromagnets. This term is linear with T 3 . The similar temperature dependence for the EHE conductivity in granular metal-metal and metal-insulator alloys takes place in spite of the different origin of giant magnetoresistance in these systems. The strong temperature dependence of the EHE coefficient can be viewed as an evidence of enhanced spin-orbit interaction at interfaces between granules and the matrix. We show a linear correlation between the interface contribution to the EHE coefficient and the interface contribution to alloy resistivity. The obtained results are in a qualitative agreement with the recent experimental data for nanocomposites

  2. Temperature dependence of the extraordinary Hall effect in magnetic granular alloys

    Energy Technology Data Exchange (ETDEWEB)

    Granovsky, A. E-mail: granov@magn.ru; Kalitsov, A.; Khanikaev, A.; Sato, H.; Aoki, Y

    2003-02-01

    We present the results of theoretical investigation of the temperature dependence of the extraordinary Hall effect (EHE) in granular metal-metal and metal-insulator alloys in the case of electron-phonon scattering at high temperatures. Skew scattering is assumed to be the dominant mechanism of the EHE. The calculations were carried out using Zhang-Levy model and the effective-medium approximation. The single-site electron-phonon interaction model was considered by analogy to that one in the theory of disordered alloys. In the case of strong spin-dependent scattering there is an additional term in the temperature dependence of the EHE coefficient of magnetic granular alloys in comparison with that for bulk ferromagnets. This term is linear with T{sup 3}. The similar temperature dependence for the EHE conductivity in granular metal-metal and metal-insulator alloys takes place in spite of the different origin of giant magnetoresistance in these systems. The strong temperature dependence of the EHE coefficient can be viewed as an evidence of enhanced spin-orbit interaction at interfaces between granules and the matrix. We show a linear correlation between the interface contribution to the EHE coefficient and the interface contribution to alloy resistivity. The obtained results are in a qualitative agreement with the recent experimental data for nanocomposites.

  3. Extraordinary Effects in Quasi-Periodic Gold Nanocavities: Enhanced Transmission and Polarization Control of Cavity Modes.

    Science.gov (United States)

    Dhama, Rakesh; Caligiuri, Vincenzo; Petti, Lucia; Rashed, Alireza R; Rippa, Massimo; Lento, Raffaella; Termine, Roberto; Caglayan, Humeyra; De Luca, Antonio

    2018-01-23

    Plasmonic quasi-periodic structures are well-known to exhibit several surprising phenomena with respect to their periodic counterparts, due to their long-range order and higher rotational symmetry. Thanks to their specific geometrical arrangement, plasmonic quasi-crystals offer unique possibilities in tailoring the coupling and propagation of surface plasmons through their lattice, a scenario in which a plethora of fascinating phenomena can take place. In this paper we investigate the extraordinary transmission phenomenon occurring in specifically patterned Thue-Morse nanocavities, demonstrating noticeable enhanced transmission, directly revealed by near-field optical experiments, performed by means of a scanning near-field optical microscope (SNOM). SNOM further provides an intuitive picture of confined plasmon modes inside the nanocavities and confirms that localization of plasmon modes is based on size and depth of nanocavities, while cross talk between close cavities via propagating plasmons holds the polarization response of patterned quasi-crystals. Our performed numerical simulations are in good agreement with the experimental results. Thus, the control on cavity size and incident polarization can be used to alter the intensity and spatial properties of confined cavity modes in such structures, which can be exploited in order to design a plasmonic device with customized optical properties and desired functionalities, to be used for several applications in quantum plasmonics.

  4. Quasi-cylindrical wave contribution in experiments on extraordinary optical transmission.

    Science.gov (United States)

    van Beijnum, Frerik; Rétif, Chris; Smiet, Chris B; Liu, Haitao; Lalanne, Philippe; van Exter, Martin P

    2012-12-20

    A metal film perforated by a regular array of subwavelength holes shows unexpectedly large transmission at particular wavelengths, a phenomenon known as the extraordinary optical transmission (EOT) of metal hole arrays. EOT was first attributed to surface plasmon polaritons, stimulating a renewed interest in plasmonics and metallic surfaces with subwavelength features. Experiments soon revealed that the field diffracted at a hole or slit is not a surface plasmon polariton mode alone. Further theoretical analysis predicted that the extra contribution, from quasi-cylindrical waves, also affects EOT. Here we report the experimental demonstration of the relative importance of surface plasmon polaritons and quasi-cylindrical waves in EOT by considering hole arrays of different hole densities. From the measured transmission spectra, we determine microscopic scattering parameters which allow us to show that quasi-cylindrical waves affect EOT only for high densities, when the hole spacing is roughly one wavelength. Apart from providing a deeper understanding of EOT, the determination of microscopic scattering parameters from the measurement of macroscopic optical properties paves the way to novel design strategies.

  5. Extraordinary variability and sharp transitions in a maximally frustrated dynamic network

    Science.gov (United States)

    Liu, Wenjia; Schmittmann, Beate; Zia, R. K. P.

    2013-03-01

    Most previous studies of complex networks have focused on single, static networks. However, in the real world, networks are dynamic and interconnected. Inspired by the presence of extroverts and introverts in the general population, we investigate a highly simplified model of a social network, involving two types of nodes: one preferring the highest degree possible, and one preferring no connections whatsoever. There are only two control parameters in the model: the number of ``introvert'' and ``extrovert'' nodes, NI and NE. Our key findings are as follows: As a function of NI and NE, the system exhibits a highly unusual transition, displaying extraordinary fluctuations (as in 2nd order transitions) and discontinuous jumps (characteristic of 1st order transitions). Most remarkably, the system can be described by an Ising-like Hamiltonian with long-range multi-spin interactions and some of its properties can be obtained analytically. This is in stark contrast with other dynamic network models which rely almost exclusively on simulations. NSF-DMR-1005417/1244666 and and ICTAS Virginia Tech

  6. Super-recognition in development: A case study of an adolescent with extraordinary face recognition skills.

    Science.gov (United States)

    Bennetts, Rachel J; Mole, Joseph; Bate, Sarah

    2017-09-01

    Face recognition abilities vary widely. While face recognition deficits have been reported in children, it is unclear whether superior face recognition skills can be encountered during development. This paper presents O.B., a 14-year-old female with extraordinary face recognition skills: a "super-recognizer" (SR). O.B. demonstrated exceptional face-processing skills across multiple tasks, with a level of performance that is comparable to adult SRs. Her superior abilities appear to be specific to face identity: She showed an exaggerated face inversion effect and her superior abilities did not extend to object processing or non-identity aspects of face recognition. Finally, an eye-movement task demonstrated that O.B. spent more time than controls examining the nose - a pattern previously reported in adult SRs. O.B. is therefore particularly skilled at extracting and using identity-specific facial cues, indicating that face and object recognition are dissociable during development, and that super recognition can be detected in adolescence.

  7. Annealing behavior of a cast Mg-Gd-Y-Zr alloy with necklace fine grains developed under hot deformation

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yi [Educational Key Laboratory of Nonferrous Metal Materials Science and Engineering, School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yang, Xuyue, E-mail: yangxuyue@mail.csu.edu.cn [Educational Key Laboratory of Nonferrous Metal Materials Science and Engineering, School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Nonferrous Metal Oriented Advanced Structural Materials and Manufacturing Cooperative Innovation Center, Central South University, Changsha 410083 (China); Xiao, Zhenyu; Zhang, Duxiu [Educational Key Laboratory of Nonferrous Metal Materials Science and Engineering, School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Jun [Institute for Frontier Materials, Deakin University, Geelong, VIC 3216 (Australia); Sakai, Taku [UEC Tokyo (The University of Electro-Communications), Chofu, Tokyo 182-8585 (Japan)

    2017-03-14

    The microstructure and texture development of a cast Mg-Gd-Y-Zr alloy during hot deformation and subsequent annealing were investigated by optical microscopy (OM) and electron backscattered diffraction (EBSD) technology. Initial microstructures with partially and fully developed new fine grains (NFGs), separately attended by continuous or interrupted hot forging, were various mixed grain structures composed of NFGs in necklace and retained coarse grains. It is shown that, during annealing, the development of grain size can be divided into three stages: i.e. an incubation of grain growth, a rapid coarsening and a normal grain growth. After a long time annealing of over 10{sup 4} ks at 693 K, the average grain size for samples continuous compressed to ε=1.2 and those interrupted compressed to ε=1.6 were close. Moreover, orientations of such strain-induced fine grains were relatively randomly distributed, leading to a weakened basal texture, while the basal plane of retained coarse grains were perpendicular to the forging direction. Such texture even became weaker during subsequent annealing. The results show that the development of necklace NFGs during hot deformation can be effective for homogeneous grain refinement under subsequent annealing.

  8. Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel.

    Science.gov (United States)

    Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

    2014-09-12

    The effect of annealing temperature (1000-1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN.

  9. Effect of Rolling and Subsequent Annealing on Microstructure, Microtexture, and Properties of an Experimental Duplex Stainless Steel

    Science.gov (United States)

    Mandal, Arka; Patra, Sudipta; Chakrabarti, Debalay; Singh, Shiv Brat

    2017-12-01

    A lean duplex stainless steel (LDSS) has been prepared with low-N content and processed by different thermo-mechanical schedules, similar to the industrial processing that comprised hot-rolling, cold-rolling, and annealing treatments. The microstructure developed in the present study on low-N LDSS has been compared to that of high-N LDSS as reported in the literature. As N is an austenite stabilizer, lower-N content reduced the stability of austenite and the austenite content in low-N LDSS with respect to the conventional LDSS. Due to low stability of austenite in low-N LDSS, cold rolling resulted in strain-induced martensitic transformation and the reversion of martensite to austenite during subsequent annealing contributed to significant grain refinement within the austenite regions. δ-ferrite grains in low-N LDSS, on the other hand, are refined by extended recovery mechanism. Initial solidification texture (mainly cube texture) within the δ-ferrite region finally converted into gamma-fiber texture after cold rolling and annealing. Although MS-brass component dominated the austenite texture in low-N LDSS after hot rolling and cold rolling, that even transformed into alpha-fiber texture after the final annealing. Due to the significant grain refinement and formation of beneficial texture within both austenite and ferrite, good combination of strength and ductility has been achieved in cold-rolled and annealed sample of low-N LDSS steel.

  10. Unified model of damage annealing in CMOS, from freeze-in to transient annealing

    International Nuclear Information System (INIS)

    Sander, H.H.; Gregory, B.L.

    Results of an experimental study at 76 0 K, are presented showing that radiation-produced holes in SiO 2 are immobile at this temperature. If an electric field is present in the SiO 2 during low temperature (76 0 K) irradiation to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide. These results are the basis for concluding that if a complimentary p,n metal-oxide semiconductor (CMOS) device is irradiated for sufficient time at 76 0 K to build-in an appreciable field, further irradiation with gate bias removed will produce very little additional change in V/sub th/, since the field in the oxide tends to keep all generated electrons in the oxide where they recombine with trapped holes. Hence the hole trapping rate = the hole annihilation rate. The room-temperature annealing following a pulsed gamma exposure occurs in two regimes. The first recovery of V/sub th/ occurs prior to 10 -4 seconds. The magnitude of this very early-time recovery, at room temperature, is oxide-dependent, and oxide process dependent. The rate-of-annealing is what is truly different between a rad-hard and a rad-soft device, since annealing in the hardest devices occurs very quickly at room temperature. (U.S.)

  11. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    Science.gov (United States)

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  12. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Tang, K.; Ahn, J.; McIntyre, P. C. [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  13. Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

    International Nuclear Information System (INIS)

    Xu, Yun-bo; Hu, Zhi-ping; Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing; Ma, De-gang; Misra, R.D.K.

    2017-01-01

    The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

  14. Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yun-bo [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Hu, Zhi-ping, E-mail: huzhiping900401@126.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Ma, De-gang [Tangshan Iron and Steel Company, Tangshan 063000, People' s Republic China (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States)

    2017-03-14

    The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

  15. Annealing evolutionary stochastic approximation Monte Carlo for global optimization

    KAUST Repository

    Liang, Faming

    2010-01-01

    outperform simulated annealing, the genetic algorithm, annealing stochastic approximation Monte Carlo, and some other metaheuristics in function optimization. © 2010 Springer Science+Business Media, LLC.

  16. Mechanical properties and annealing texture of zirconium sheets

    International Nuclear Information System (INIS)

    Hanif-ur-Rehman; Khawaja, F.A.

    1996-01-01

    Mechanical properties like yield strength (YS), ultimate tensile strength(UTS), percentage elongation and annealing texture has been studied in sheets of commercially pure zirconium. The YS and UTS decrease as a function of annealing temperature up to 600 V, but both quantities have maximum value in sample annealed at 800 deg. C. The percentage elongation decreased with increase in annealing temperature up to 600 deg. C. A slight decrease and minimum value of percentage elongation was observed at 650 and 800 C respectively. The texture development in the annealed samples has been studied by the X-ray diffraction method. The sampled annealed at 800 deg. C showed a texture component (0001) [01 bar 10] with orientation density of about 8 times random, while the samples annealed at 600,650 and 700 deg. C showed a texture component (0001)[2 bar 110] with orientation density of about 5 times random. Thus it is concluded, that the texture component (0001)[2 bar 110] and (0001)[01 bar 10] at 650 and 800 geg. C respectively, may be the responsible for the increase in YS and UTS and decrease in percentage elongation at these temperatures. (author)

  17. Optical scattering characteristic of annealed niobium oxide films

    International Nuclear Information System (INIS)

    Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

    2005-01-01

    Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

  18. Extrapolation of zircon fission-track annealing models

    International Nuclear Information System (INIS)

    Palissari, R.; Guedes, S.; Curvo, E.A.C.; Moreira, P.A.F.P.; Tello, C.A.; Hadler, J.C.

    2013-01-01

    One of the purposes of this study is to give further constraints on the temperature range of the zircon partial annealing zone over a geological time scale using data from borehole zircon samples, which have experienced stable temperatures for ∼1 Ma. In this way, the extrapolation problem is explicitly addressed by fitting the zircon annealing models with geological timescale data. Several empirical model formulations have been proposed to perform these calibrations and have been compared in this work. The basic form proposed for annealing models is the Arrhenius-type model. There are other annealing models, that are based on the same general formulation. These empirical model equations have been preferred due to the great number of phenomena from track formation to chemical etching that are not well understood. However, there are two other models, which try to establish a direct correlation between their parameters and the related phenomena. To compare the response of the different annealing models, thermal indexes, such as closure temperature, total annealing temperature and the partial annealing zone, have been calculated and compared with field evidence. After comparing the different models, it was concluded that the fanning curvilinear models yield the best agreement between predicted index temperatures and field evidence. - Highlights: ► Geological data were used along with lab data for improving model extrapolation. ► Index temperatures were simulated for testing model extrapolation. ► Curvilinear Arrhenius models produced better geological temperature predictions

  19. Grapheme-colour synaesthesia yields an ordinary rather than extraordinary memory advantage: evidence from a group study.

    Science.gov (United States)

    Rothen, Nicolas; Meier, Beat

    2010-04-01

    In synaesthesia, the input of one sensory modality automatically triggers an additional experience, not normally triggered by the input of that modality. Therefore, compared to non-synaesthetes, additional experiences exist and these may be used as retrieval cues when memory is tested. Previous case studies have suggested that synaesthesia may yield even extraordinary memory abilities. However, group studies found either a task-specific memory advantage or no performance advantage at all. The aim of the present study was to test whether grapheme-colour synaesthesia gives rise to a general memory benefit using a standardised memory test (Wechsler Memory Scale). The synaesthetes showed a performance advantage in episodic memory tests, but not in short-term memory tests. However, performance was still within the ordinary range. The results support the hypothesis that synaesthesia provides for a richer world of experience and as a consequence additional retrieval cues may be available and beneficial but not to the point of extraordinary memory ability.

  20. Annealed Scaling for a Charged Polymer

    Energy Technology Data Exchange (ETDEWEB)

    Caravenna, F., E-mail: francesco.caravenna@unimib.it [Università degli Studi di Milano-Bicocca, Dipartimento di Matematica e Applicazioni (Italy); Hollander, F. den, E-mail: denholla@math.leidenuniv.nl [Leiden University, Mathematical Institute (Netherlands); Pétrélis, N., E-mail: nicolas.petrelis@univ-nantes.fr [Université de Nantes, Laboratoire de Mathématiques Jean Leray UMR 6629 (France); Poisat, J., E-mail: poisat@ceremade.dauphine.fr [Université Paris-Dauphine, PSL Research University, CEREMADE, UMR 7534 (France)

    2016-03-15

    This paper studies an undirected polymer chain living on the one-dimensional integer lattice and carrying i.i.d. random charges. Each self-intersection of the polymer chain contributes to the interaction Hamiltonian an energy that is equal to the product of the charges of the two monomers that meet. The joint probability distribution for the polymer chain and the charges is given by the Gibbs distribution associated with the interaction Hamiltonian. The focus is on the annealed free energy per monomer in the limit as the length of the polymer chain tends to infinity. We derive a spectral representation for the free energy and use this to prove that there is a critical curve in the parameter plane of charge bias versus inverse temperature separating a ballistic phase from a subballistic phase. We show that the phase transition is first order. We prove large deviation principles for the laws of the empirical speed and the empirical charge, and derive a spectral representation for the associated rate functions. Interestingly, in both phases both rate functions exhibit flat pieces, which correspond to an inhomogeneous strategy for the polymer to realise a large deviation. The large deviation principles in turn lead to laws of large numbers and central limit theorems. We identify the scaling behaviour of the critical curve for small and for large charge bias. In addition, we identify the scaling behaviour of the free energy for small charge bias and small inverse temperature. Both are linked to an associated Sturm-Liouville eigenvalue problem. A key tool in our analysis is the Ray-Knight formula for the local times of the one-dimensional simple random walk. This formula is exploited to derive a closed form expression for the generating function of the annealed partition function, and for several related quantities. This expression in turn serves as the starting point for the derivation of the spectral representation for the free energy, and for the scaling theorems

  1. Annealed Scaling for a Charged Polymer

    International Nuclear Information System (INIS)

    Caravenna, F.; Hollander, F. den; Pétrélis, N.; Poisat, J.

    2016-01-01

    This paper studies an undirected polymer chain living on the one-dimensional integer lattice and carrying i.i.d. random charges. Each self-intersection of the polymer chain contributes to the interaction Hamiltonian an energy that is equal to the product of the charges of the two monomers that meet. The joint probability distribution for the polymer chain and the charges is given by the Gibbs distribution associated with the interaction Hamiltonian. The focus is on the annealed free energy per monomer in the limit as the length of the polymer chain tends to infinity. We derive a spectral representation for the free energy and use this to prove that there is a critical curve in the parameter plane of charge bias versus inverse temperature separating a ballistic phase from a subballistic phase. We show that the phase transition is first order. We prove large deviation principles for the laws of the empirical speed and the empirical charge, and derive a spectral representation for the associated rate functions. Interestingly, in both phases both rate functions exhibit flat pieces, which correspond to an inhomogeneous strategy for the polymer to realise a large deviation. The large deviation principles in turn lead to laws of large numbers and central limit theorems. We identify the scaling behaviour of the critical curve for small and for large charge bias. In addition, we identify the scaling behaviour of the free energy for small charge bias and small inverse temperature. Both are linked to an associated Sturm-Liouville eigenvalue problem. A key tool in our analysis is the Ray-Knight formula for the local times of the one-dimensional simple random walk. This formula is exploited to derive a closed form expression for the generating function of the annealed partition function, and for several related quantities. This expression in turn serves as the starting point for the derivation of the spectral representation for the free energy, and for the scaling theorems

  2. Embrittlement recovery due to annealing of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

    1996-01-01

    Embrittlement of reactor pressure vessels (RPVs) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. Although such an annealing process has not been applied to any commercial plants in the United States, one US Army reactor, the BR3 plant in Belgium, and several plants in eastern Europe have been successfully annealed. All available Charpy annealing data were collected and analyzed in this project to develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy over a range of potential annealing conditions. Pattern recognition, transformation analysis, residual studies, and the current understanding of the mechanisms involved in the annealing process were used to guide the selection of the most sensitive variables and correlating parameters and to determine the optimal functional forms for fitting the data. The resulting models were fitted by nonlinear least squares. The use of advanced tools, the larger data base now available, and insight from surrogate hardness data produced improved models for quantitative evaluation of the effects of annealing. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and the surrogate hardness data base. The standard errors of the resulting recovery models relative to calibration data are comparable to the uncertainty in unirradiated Charpy data. This work also demonstrates that microhardness recovery is a good surrogate for transition temperature shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes

  3. Solving the border control problem: evidence of enhanced face matching in individuals with extraordinary face recognition skills.

    OpenAIRE

    Bobak, Anna K.; Dowsett, A.; Bate, Sarah

    2016-01-01

    Photographic identity documents (IDs) are commonly used despite clear evidence that unfamiliar face matching is a difficult and error-prone task. The current study set out to examine the performance of seven individuals with extraordinary face recognition memory, so called ?super recognisers? (SRs), on two face matching tasks resembling border control identity checks. In Experiment 1, the SRs as a group outperformed control participants on the ?Glasgow Face Matching Test?, and some case-by-ca...

  4. Extraordinary aggressive behavior from the giant coral reef fish, Bolbometopon muricatum, in a remote marine reserve.

    Science.gov (United States)

    Muñoz, Roldan C; Zgliczynski, Brian J; Laughlin, Joseph L; Teer, Bradford Z

    2012-01-01

    Human impacts to terrestrial and marine communities are widespread and typically begin with the local extirpation of large-bodied animals. In the marine environment, few pristine areas relatively free of human impact remain to provide baselines of ecosystem function and goals for restoration efforts. Recent comparisons of remote and/or protected coral reefs versus impacted sites suggest remote systems are dominated by apex predators, yet in these systems the ecological role of non-predatory, large-bodied, highly vulnerable species such as the giant bumphead parrotfish (Bolbometopon muricatum) has received less attention. Overfishing of Bolbometopon has lead to precipitous declines in population density and avoidance of humans throughout its range, contributing to its status as a candidate species under the U. S. Endangered Species Act and limiting opportunities to study unexploited populations. Here we show that extraordinary ecological processes, such as violent headbutting contests by the world's largest parrotfish, can be revealed by studying unexploited ecosystems, such as the coral reefs of Wake Atoll where we studied an abundant population of Bolbometopon. Bolbometopon is among the largest of coral reef fishes and is a well known, charismatic species, yet to our knowledge, no scientific documentation of ritualized headbutting exists for marine fishes. Our observations of aggressive headbutting by Bolbometopon underscore that remote locations and marine reserves, by inhibiting negative responses to human observers and by allowing the persistence of historical conditions, can provide valuable opportunities to study ecosystems in their natural state, thereby facilitating the discovery, conservation, and interpretation of a range of sometimes remarkable behavioral and ecological processes.

  5. Extraordinary aggressive behavior from the giant coral reef fish, Bolbometopon muricatum, in a remote marine reserve.

    Directory of Open Access Journals (Sweden)

    Roldan C Muñoz

    Full Text Available Human impacts to terrestrial and marine communities are widespread and typically begin with the local extirpation of large-bodied animals. In the marine environment, few pristine areas relatively free of human impact remain to provide baselines of ecosystem function and goals for restoration efforts. Recent comparisons of remote and/or protected coral reefs versus impacted sites suggest remote systems are dominated by apex predators, yet in these systems the ecological role of non-predatory, large-bodied, highly vulnerable species such as the giant bumphead parrotfish (Bolbometopon muricatum has received less attention. Overfishing of Bolbometopon has lead to precipitous declines in population density and avoidance of humans throughout its range, contributing to its status as a candidate species under the U. S. Endangered Species Act and limiting opportunities to study unexploited populations. Here we show that extraordinary ecological processes, such as violent headbutting contests by the world's largest parrotfish, can be revealed by studying unexploited ecosystems, such as the coral reefs of Wake Atoll where we studied an abundant population of Bolbometopon. Bolbometopon is among the largest of coral reef fishes and is a well known, charismatic species, yet to our knowledge, no scientific documentation of ritualized headbutting exists for marine fishes. Our observations of aggressive headbutting by Bolbometopon underscore that remote locations and marine reserves, by inhibiting negative responses to human observers and by allowing the persistence of historical conditions, can provide valuable opportunities to study ecosystems in their natural state, thereby facilitating the discovery, conservation, and interpretation of a range of sometimes remarkable behavioral and ecological processes.

  6. Sexual conflict explains the extraordinary diversity of mechanisms regulating mitochondrial inheritance.

    Science.gov (United States)

    Radzvilavicius, Arunas L; Lane, Nick; Pomiankowski, Andrew

    2017-10-26

    Mitochondria are predominantly inherited from the maternal gamete, even in unicellular organisms. Yet an extraordinary array of mechanisms enforce uniparental inheritance, which implies shifting selection pressures and multiple origins. We consider how this high turnover in mechanisms controlling uniparental inheritance arises using a novel evolutionary model in which control of mitochondrial transmission occurs either during spermatogenesis (by paternal nuclear genes) or at/after fertilization (by maternal nuclear genes). The model treats paternal leakage as an evolvable trait. Our evolutionary analysis shows that maternal control consistently favours strict uniparental inheritance with complete exclusion of sperm mitochondria, whereas some degree of paternal leakage of mitochondria is an expected outcome under paternal control. This difference arises because mito-nuclear linkage builds up with maternal control, allowing the greater variance created by asymmetric inheritance to boost the efficiency of purifying selection and bring benefits in the long term. In contrast, under paternal control, mito-nuclear linkage tends to be much weaker, giving greater advantage to the mixing of cytotypes, which improves mean fitness in the short term, even though it imposes a fitness cost to both mating types in the long term. Sexual conflict is an inevitable outcome when there is competition between maternal and paternal control of mitochondrial inheritance. If evolution has led to complete uniparental inheritance through maternal control, it creates selective pressure on the paternal nucleus in favour of subversion through paternal leakage, and vice versa. This selective divergence provides a reason for the repeated evolution of novel mechanisms that regulate the transmission of paternal mitochondria, both in the fertilized egg and spermatogenesis. Our analysis suggests that the widespread occurrence of paternal leakage and prevalence of heteroplasmy are natural outcomes of

  7. AN EXTRAORDINARY OUTBURST OF THE MAGNETAR SWIFT J1822.3–1606

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, Manoneeta; Göğüş, Ersin [Sabancı University, Faculty of Engineering and Natural Sciences, Orhanlı Tuzla 34956, İstanbul (Turkey)

    2015-08-20

    The 2011 outburst of Swift J1822.3–1606 was extraordinary; periodic modulations at the spin period of the underlying neutron star were clearly visible, remarkably similar to what is observed during the decaying tail of magnetar giant flares. We investigated the temporal characteristics of X-ray emission during the early phases of the outburst. We performed a periodicity search with the spectral hardness ratio (HR) and found a coherent signal near the spin period of the neutron star, but with a lag of about 3 radians. Therefore, the HR is strongly anti-correlated with the X-ray intensity, which is also seen in the giant flares. We studied the time evolution of the pulse profile and found that it evolves from a complex morphology to a much simpler shape within about a month. Pulse profile simplification also takes place during the giant flares, but on a much shorter timescale of about a few minutes. We found that the amount of energy emitted during the first 25 days of the outburst is comparable to what was detected in minutes during the decaying tail of giant flares. Based on these similarities, we suggest that the triggering mechanisms of the giant flares and the magnetar outbursts are likely the same. We propose that the trapped fireball that develops in the magnetosphere at the onset of the outburst radiates away efficiently in minutes in magnetars exhibiting giant flares, while in other magnetars, such as Swift J1822.3–1606, the efficiency of radiation of the fireball is not as high and, therefore, lasts much longer.

  8. Radio observations reveal a smooth circumstellar environment around the extraordinary type Ib supernova 2012au

    Energy Technology Data Exchange (ETDEWEB)

    Kamble, Atish; Soderberg, Alicia M.; Margutti, Raffaella; Milisavljevic, Dan; Chakraborti, Sayan; Dittmann, Jason; Drout, Maria; Sanders, Nathan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Chomiuk, Laura [Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); Medvedev, Mikhail [The Department of Physics and Astronomy, University of Kansas, Lawrence, KS 66045 (United States); Chevalier, Roger [Department of Astronomy, University of Virginia, P.O. Box 400325, Charlottesville, VA 22904-4325 (United States); Chugai, Nikolai [Institute of Astronomy, Russian Academy of Sciences, Pyatnitskaya 48, 109017 Moscow (Russian Federation); Fransson, Claes [Department of Astronomy, The Oskar Klein Centre, Stockholm University, AlbaNova University Centre, SE-106 91 Stockholm (Sweden); Nakar, Ehud, E-mail: atish.vyas@gmail.com [Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978 (Israel)

    2014-12-10

    We present extensive radio and X-ray observations of SN 2012au, an energetic, radio-luminous supernova of Type Ib that exhibits multi-wavelength properties bridging subsets of hydrogen-poor superluminous supernovae, hypernovae, and normal core-collapse supernovae. The observations closely follow models of synchrotron emission from a shock-heated circumburst medium that has a wind density profile (ρ∝r {sup –2}). We infer a sub-relativistic velocity for the shock wave v ≈ 0.2 c and a radius of r ≈ 1.4 × 10{sup 16}cm at 25 days after the estimated date of explosion. For a wind velocity of 1000 km s{sup –1}, we determine the mass-loss rate of the progenitor to be M-dot =3.6×10{sup −6} M{sub ⊙} yr{sup −1}, consistent with the estimates from X-ray observations. We estimate the total internal energy of the radio-emitting material to be E ≈ 10{sup 47} erg, which is intermediate to SN 1998bw and SN 2002ap. The evolution of the radio light curve of SN 2012au is in agreement with its interaction with a smoothly distributed circumburst medium and the absence of stellar shells ejected from previous outbursts out to r ≈ 10{sup 17} cm from the supernova site. We conclude that the bright radio emission from SN 2012au was not dissimilar from other core-collapse supernovae despite its extraordinary optical properties, and that the evolution of the SN 2012au progenitor star was relatively quiet, marked with a steady mass loss, during the final years preceding explosion.

  9. Annealing effect on restoration of irradiation steel properties

    International Nuclear Information System (INIS)

    Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

    1986-01-01

    The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

  10. Structural study of conventional and bulk metallic glasses during annealing

    International Nuclear Information System (INIS)

    Pineda, E.; Hidalgo, I.; Bruna, P.; Pradell, T.; Labrador, A.; Crespo, D.

    2009-01-01

    Metallic glasses with conventional glass-forming ability (Al-Fe-Nd, Fe-Zr-B, Fe-B-Nb compositions) and bulk metallic glasses (Ca-Mg-Cu compositions) were studied by synchrotron X-ray diffraction during annealing throughout glass transition and crystallization temperatures. The analysis of the first diffraction peak position during the annealing process allowed us to follow the free volume change during relaxation and glass transition. The structure factor and the radial distribution function of the glasses were obtained from the X-ray measurements. The structural changes occurred during annealing are analyzed and discussed.

  11. Composition dependent thermal annealing behaviour of ion tracks in apatite

    Energy Technology Data Exchange (ETDEWEB)

    Nadzri, A., E-mail: allina.nadzri@anu.edu.au [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Schauries, D.; Mota-Santiago, P.; Muradoglu, S. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gleadow, A.J.W. [School of Earth Science, University of Melbourne, Melbourne, VIC 3010 (Australia); Hawley, A. [Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168 (Australia); Kluth, P. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia)

    2016-07-15

    Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

  12. Annealing of the BR3 reactor pressure vessel

    International Nuclear Information System (INIS)

    Fabry, A.; Motte, F.; Stiennon, G.; Debrue, J.; Gubel, P.; Van de Velde, J.; Minsart, G.; Van Asbroeck, P.

    1985-01-01

    The pressure vessel of the Belgian BR-3 plant, a small (11 MWe) PWR presently used for fuel testing programs and operated since 1962, was annealed during March, 1984. The anneal was performed under wet conditions for 168 hours at 650 0 F with core removal and within plant design margins justification for the anneal, summary of plant characteristics, description of materials sampling, summary of reactor physics and dosimetry, development of embrittlement trend curves, hypothesized pressurized and overcooling thermal shock accidents, and conclusions are provided in detail

  13. Radiation damage and annealing in plutonium tetrafluoride

    Science.gov (United States)

    McCoy, Kaylyn; Casella, Amanda; Sinkov, Sergey; Sweet, Lucas; McNamara, Bruce; Delegard, Calvin; Jevremovic, Tatjana

    2017-12-01

    A sample of plutonium tetrafluoride that was separated prior to 1966 at the Hanford Site in Washington State was analyzed at the Pacific Northwest National Laboratory (PNNL) in 2015 and 2016. The plutonium tetrafluoride, as received, was an unusual color and considering the age of the plutonium, there were questions about the condition of the material. These questions had to be answered in order to determine the suitability of the material for future use or long-term storage. Therefore, thermogravimetric/differential thermal analysis and X-ray diffraction evaluations were conducted to determine the plutonium's crystal structure, oxide content, and moisture content; these analyses reported that the plutonium was predominately amorphous and tetrafluoride, with an oxide content near ten percent. Freshly fluorinated plutonium tetrafluoride is known to be monoclinic. During the initial thermogravimetric/differential thermal analyses, it was discovered that an exothermic event occurred within the material near 414 °C. X-ray diffraction analyses were conducted on the annealed tetrafluoride. The X-ray diffraction analyses indicated that some degree of recrystallization occurred in conjunction with the 414 °C event. The following commentary describes the series of thermogravimetric/differential thermal and X-ray diffraction analyses that were conducted as part of this investigation at PNNL.

  14. Radiation damage and annealing in plutonium tetrafluoride

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, Kaylyn; Casella, Amanda; Sinkov, Sergey; Sweet, Lucas; McNamara, Bruce; Delegard, Calvin; Jevremovic, Tatjana

    2017-12-01

    Plutonium tetrafluoride that was separated prior to 1966 at the Hanford Site in Washington State was analyzed at the Pacific Northwest National Laboratory (PNNL) in 2015 and 2016. The plutonium tetrafluoride, as received, was an off-normal color and considering the age of the plutonium, there were questions about the condition of the material. These questions had to be answered in order to determine the suitability of the material for future use or long-term storage. Therefore, Thermogravimetric/Differential Thermal Analysis and X-ray Diffraction evaluations were conducted to determine the plutonium’s crystal structure, oxide content, and moisture content; these analyses reported that the plutonium was predominately amorphous and tetrafluoride, with an oxide content near ten percent. Freshly fluorinated plutonium tetrafluoride is known to be monoclinic. During the initial Thermogravimetric/Differential Thermal analyses, it was discovered that an exothermic event occurred within the material near 414°C. X-ray Diffraction analyses were conducted on the annealed tetrafluoride. The X-ray Diffraction analyses indicated that some degree of recrystallization occurred in conjunction with the 414°C event. The following commentary describes the series of Thermogravimetric/Differential Thermal and X-ray Diffraction analyses that were conducted as part of this investigation at PNNL, in collaboration with the University of Utah Nuclear Engineering Program.

  15. Radiation damage and annealing in plutonium tetrafluoride

    International Nuclear Information System (INIS)

    McCoy, Kaylyn; Casella, Amanda; Sinkov, Sergey

    2017-01-01

    A sample of plutonium tetrafluoride that was separated prior to 1966 at the Hanford Site in Washington State was analyzed at the Pacific Northwest National Laboratory (PNNL) in 2015 and 2016. The plutonium tetrafluoride, as received, was an unusual color and considering the age of the plutonium, there were questions about the condition of the material. These questions had to be answered in order to determine the suitability of the material for future use or long-term storage. Therefore, thermogravimetric/differential thermal analysis and X-ray diffraction evaluations were conducted to determine the plutonium's crystal structure, oxide content, and moisture content; these analyses reported that the plutonium was predominately amorphous and tetrafluoride, with an oxide content near ten percent. Freshly fluorinated plutonium tetrafluoride is known to be monoclinic. And during the initial thermogravimetric/differential thermal analyses, it was discovered that an exothermic event occurred within the material near 414 °C. X-ray diffraction analyses were conducted on the annealed tetrafluoride. The X-ray diffraction analyses indicated that some degree of recrystallization occurred in conjunction with the 414 °C event. This commentary describes the series of thermogravimetric/differential thermal and X-ray diffraction analyses that were conducted as part of this investigation at PNNL.

  16. Grain-size dependence of the deterioration of oxygen transport for pure and 3 mol% Zr-doped Ba0.5Sr0.5Co0.8Fe0.2O3-δ induced by thermal annealing

    NARCIS (Netherlands)

    Saher, S.; Meffert, M.; Störmer, H.; Gerthsen, D.; Bouwmeester, Henricus J.M.

    2017-01-01

    In this study, the influence of long-term annealing at intermediate temperatures on oxygen transport of Ba0.5Sr0.5Co0.8Fe0.2O3 d (BSCF) and 3 mol% Zr-doped BSCF (BSCF-Z3) ceramics with different grain sizes was studied by means of in situ electrical conductivity relaxation (ECR) measurements.

  17. Impact of Annealing Temperature on the Physical Properties of the Lanthanum Deficiency Manganites

    Directory of Open Access Journals (Sweden)

    Skini Ridha

    2017-10-01

    Full Text Available The lanthanum deficiency manganites La0.8-x□xCa0.2MnO3 (x = 0, 0.1 and 0.2, where □ is a lanthanum vacancy, were prepared using the classic ceramic methods with different thermal treatments (1373 K and 973 K. The structural, magnetic, and magnetocaloric properties of these compounds were studied as a function of annealing temperature. It was noted that the annealing temperature did not affect the crystal structure of our samples (orthorhombic structure with Pnma space group. Nevertheless, a change in the variation of the unit cell volume V, the average bond length dMn–O, and the average bond angles θMn–O–Mn were observed. Magnetization versus temperature study has shown that all samples exhibited a magnetic transition from ferromagnetic (FM to paramagnetic (PM phase with increasing temperature. However, it can be clearly seen that the annealing at 973 K induced an increase of the magnetization. In addition, the magnetocaloric effect (MCE as well as the relative cooling power (RCP were estimated. As an important result, the values of MCE and RCP in our Lanthanum-deficiency manganites are reported to be near to those found in gadolinium, considered as magnetocaloric reference material.

  18. Thermal Annealing Reduces Geminate Recombination in TQ1:N2200 All-Polymer Solar Cells

    KAUST Repository

    Karuthedath, Safakath

    2018-03-27

    A combination of steady-state and time-resolved spectroscopic measurements is used to investigate the photophysics of the all-polymer bulk heterojunction system TQ1:N2200. Upon thermal annealing a doubling of the external quantum efficiency and an improved fill factor (FF) is observed, resulting in an increase in the power conversion efficiency. Carrier extraction is similar for both blends, as demonstrated by time-resolved electric-field-induced second harmonic generation experiments in conjunction with transient photocurrent studies, spanning the ps-µs time range. Complementary transient absorption spectroscopy measurements reveal that the different quantum efficiencies originate from differences in charge carrier separation and recombination at the polymer-polymer interface: in as-spun samples ~35 % of the charges are bound in interfacial charge-transfer states and recombine geminately, while this pool is reduced to ~7 % in thermally-annealed sample, resulting in higher short-circuit currents. Time-delayed collection field experiments demonstrate a field-dependent charge generation process in as-spun samples, which reduces the FF. In contrast, field-dependence of charge generation is weak in annealed films. While both devices exhibit significant non-geminate recombination competing with charge extraction, causing low FFs, our results demonstrate that the donor/acceptor interface in all-polymer solar cells can be favourably altered to enhance charge separation, without compromising charge transport and extraction.

  19. Room-temperature annealing of Si implantation damage in InP

    International Nuclear Information System (INIS)

    Akano, U.G.; Mitchell, I.V.

    1991-01-01

    Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

  20. Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study

    Science.gov (United States)

    Kumar, Pushpendra; Huber, Patrick

    2016-04-01

    Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200˚C to 800˚C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.