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Sample records for annealing induced extraordinary

  1. ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION

    OpenAIRE

    Mahnkopf, R.; Przyrembel, G.; Wagemann, H.

    1988-01-01

    The annealing of fixed oxide charge and interface states generated by hot-carrier stress is investigated in the temperature range of 100°C - 450°C. First order rate equations are given, which approximately describe two subsequent processes involved in the annealing and ending at neutralization. The related activation energies are determined. For comparison the annealing of synchrotron light induced damage is examined.

  2. The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering

    CERN Document Server

    Li, Jing; Wu, Suntao

    2007-01-01

    Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-$\\mu$m-thick PZT layer with (111) or (100)-preferred orientation was first deposited onto Pt/Ti/SiO2/Si substrates using the sol-gel method, and than a PZT layer with thickness of 1$\\mu$m was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460 degrees C, and ...

  3. Radiation induced effects and annealing methods in fiberoptics and glasses

    International Nuclear Information System (INIS)

    Radiation induced effects in glass-rods and fiberoptics have been studied to determine parameters affecting the application of these materials in nuclear technology, i.e. as fiberscopes for visual inspection in severe radiation environments. Different glass and fibertypes have been exposed to fission product gamma radiation. The radiation induced transmission loss was measured with a spectrophotometer and then different annealing methods were examined to improve the transmission properties again. Especially the changes in glass and fiber recovery vs. time as a function of radiation dose and annealing temperature were investigated. Annealing experiments were performed exposing the samples either to temperature treatment or to various light sources such as quartz lamp, arc lamp or UV-laser for optical annealing. The transmission recovery was then investigated either as a function of annealing temperature or of exposure time to the light sources. The results allow conclusions on the design and composition of optical fiber endoscopes to be used in severe radiation environment where image transmission is required in the presence of high level nuclear radiation. (author)

  4. Annealing-induced shape recovery in thin film metallic glass

    International Nuclear Information System (INIS)

    Highlights: • Annealing-induced shape recovery of thin film metallic glass is examined. • Shape recovery becomes obvious with increasing temperature and holding time. • Minimum roughness is obtained when annealed within supercooled liquid region. • The amount of free volume in the film plays a role for the shape recovery. • The numerical simulation confirms the shape recovery upon annealing. - Abstract: The shape recovery property of a sputtered Zr50.3Cu28.1Al14Ni7.6 (in at.%) thin film metallic glass upon heating is examined. Due to the surface tension-driven viscous flow, the shape of indentation appears to recover to different extents at various temperatures and holding times. It is found that a maximum of 59.8% indentation depth recovery is achieved after annealing within the supercooled liquid region (SCLR). The amount of free volume in the film is found to play a role in the recovery. Atomic force microscopy results reveal a decrease in film roughness to a minimum value within SCLR. To elucidate the experimentally observed shape recovery, a numerical modeling has been employed. It is evident that the depressed region caused by indentation is elevated after annealing

  5. Annealing induced recrystallization of radiation damaged titanite and allanite

    International Nuclear Information System (INIS)

    in the titanite structure. Hence, the planes containing Si-O-Ti-O bond rings are less susceptible to a self-accumulation of radiation-induced defects resulting in the development of amorphous regions as compared to the perpendicular plane containing Ti-O bond chains. Multistep annealing gradually suppresses the structural defects in the crystalline fraction of the titanite as the improvement of the SiO4-TiO6 connectivity within planes near perpendicular to the TiO6 chains reaches saturation near 900 K. Annealing-induced recrystallization of the radiation-induced amorphous nanoregions takes place in the temperature range between approximately 650 and 950 K, with a maximum near 750 K. To determine the influence of radiation damage on the behavior of the elastic material properties of titanite, nanoindentation measurements were performed on partially metamict titanite (sample E2312) and for comparison additionally on nearly undamaged crystalline titanite (Rauris sample) and titanite glass. Metamict titanite E2312 shows hardness (H) and elastic modulus (E) values close to those of titanite glass. Rauris titanite shows strong anisotropy and the H and E values are clearly larger than those of E2312. Thermally induced stepwise recrystallization of metamict titanite E2312 leads to a decrease in the hardness until approximately 950 K and afterwards to an increase at higher temperatures, while the elastic modulus increases continuously (H and E values measured always at room temperature). Changes of the hardness and elastic modulus are related to increasing long-range order and vanishing amorphous interface areas in the titanite structure. In further studies the structural recovery of the metamict epidot group mineral allanite (sample number R1) produced by thermal annealing was followed by powder X-ray diffraction, single-crystal synchrotron X-ray diffraction and infrared spectroscopy. Allanite contains in contrast to titanite structural OH groups. But no evidences for a

  6. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  7. Annealing induced reorientation of crystallites in Sn doped ZnO films

    Science.gov (United States)

    Ravichandran, K.; Vasanthi, M.; Thirumurugan, K.; Sakthivel, B.; Karthika, K.

    2014-11-01

    Tin doped ZnO thin films were prepared by employing a simplified spray pyrolysis technique using a perfume atomizer and subsequently annealed under different temperatures from 350 °C to 500 °C in steps of 50 °C. The structural, optical, electrical, photoluminescence and surface morphological properties of the as-deposited films were studied and compared with that of the annealed films. The X-ray diffraction studies showed that as-deposited film exhibits preferential orientation along the (0 0 2) plane and it changes in favour of (1 0 0) plane after annealing. The increase in crystallite size due to annealing is explained on the basis of Ostwald ripening effect. It is found that the optical transmittance and band gap increases with increase in annealing temperature. A slight decrease in resistivity caused by annealing is discussed in correlation with annealing induced defect modifications and surface morphology.

  8. Annealing of UV-Induced Birefringence in Hydrogen Loaded Germanosilicate Fibres

    DEFF Research Database (Denmark)

    Canning, John; Deyerl, Hans-Jürgen; Sørensen, Henrik Rokkjær;

    2005-01-01

    UV-reduced birefringence in germanosilicate optical fibres loaded with hydrogen is annealed out at low temperatures (125o C). Annealing for induced birefringence in gratings written by either s or p polarised UV light are identical. The results are incosistent with previous models for the origin of...

  9. Thermally induced native defect transform in annealed GaSb

    Science.gov (United States)

    Jie, Su; Tong, Liu; Jing-Ming, Liu; Jun, Yang; Yong-Biao, Bai; Gui-Ying, Shen; Zhi-Yuan, Dong; Fang-Fang, Wang; You-Wen, Zhao

    2016-07-01

    Undoped p-type GaSb single crystals were annealed at 550–600 °C for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

  10. Propagating self-sustained annealing of radiation-induced interstitial complexes

    Science.gov (United States)

    Bokov, P. M.; Selyshchev, P. A.

    2016-02-01

    A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions.

  11. Annealing-induced change in quantum dot chain formation mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K. [Department of Physics and Astronomy, Brigham Young University, Provo UT 84602 (United States); Yang, Haeyeon [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States); Kim, Dong Jun [IPG Photonics Corporation, Oxford, MA 01540 (United States)

    2014-12-15

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  12. Annealing-induced change in quantum dot chain formation mechanism

    Directory of Open Access Journals (Sweden)

    Tyler D. Park

    2014-12-01

    Full Text Available Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  13. Annealing-induced change in quantum dot chain formation mechanism

    Science.gov (United States)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-01

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  14. Annealing-induced change in quantum dot chain formation mechanism

    International Nuclear Information System (INIS)

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier

  15. Low-Temperature Annealing Induced Amorphization in Nanocrystalline NiW Alloy Films

    Directory of Open Access Journals (Sweden)

    Z. Q. Chen

    2013-01-01

    Full Text Available Annealing induced amorphization in sputtered glass-forming thin films was generally observed in the supercooled liquid region. Based on X-ray diffraction and transmission electron microscope (TEM analysis, however, here, we demonstrate that nearly full amorphization could occur in nanocrystalline (NC sputtered NiW alloy films annealed at relatively low temperature. Whilst the supersaturation of W content caused by the formation of Ni4W phase played a crucial role in the amorphization process of NiW alloy films annealed at 473 K for 30 min, nearly full amorphization occurred upon further annealing of the film for 60 min. The redistribution of free volume from amorphous regions into crystalline regions was proposed as the possible mechanism underlying the nearly full amorphization observed in NiW alloys.

  16. Beam induced annealing of damage in carbon implanted silicon, ch. 4

    International Nuclear Information System (INIS)

    The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H+ and He+ beams in the energy interval 30 - 200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to the quantity fsub(a)sigmasub(a) introduced in an earlier paper in order to describe saturation effects in the damage production after H+ or He+ impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction. (Auth.)

  17. AFM research on the mechanism of Fe-based alloy stress annealed inducing magnetic anisotropy

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The cross-section of the Fe-based alloy (Fe73.5Cu1Nb3Si13.5B9) ribbon annealed at 540℃ under various tensile stress was investigated with atomic force microscope (AFM). The stress effect mechanism in Fe-based alloy ribbon tensile stress an-nealed inducing transverse magnetic anisotropy field was studied using the X-ray diffraction spectra and longitudinal drive giant magneto-impedance effect curves, and the model of direction dominant in encapsulated grain agglomeration was es-tablished. The relationship between the direction dominant in encapsulated grain agglomeration and magnetic anisotropy field was disclosed.

  18. Chemical ordering in magnetic FePd/Pd(001) epitaxial thin films induced by annealing

    International Nuclear Information System (INIS)

    Chemically disordered FePd epitaxial layers are grown at room temperature by molecular beam epitaxy on a Pd(001) buffer layer and then annealed in order to induce the chemically ordered L10 (AuCu I) structure. Contrary to what is observed in the case of ordering during growth above room temperature, the ordered structure appears here with the three possible variants of the L10 phase. The ratio of the three different variant volumes is set by the residual epitaxial strain in the layer before annealing. It thus explains that for long annealing times, the long-range order parameter associated with the L10 variant with c along the (100) growth direction saturates at a value close to 0.65, and never reaches unity. Magnetic consequences of the ordering are studied

  19. Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing

    Institute of Scientific and Technical Information of China (English)

    RAO Rui; XU Zhong-yang; ZENG Xiang-bing

    2002-01-01

    Al-induced lateral crystallization of amorphous silicon thin films by microwave annealing is investigated. The crystallized Si films are examined by optical microscopy , Raman spectroscopy, transmission electron microscopy and transmission electron diffraction micrography. After microwave annealing at 480 ℃ for 50 min,the amorphous Si is completely crystallized with large grains of main ( 111 ) orientation. The rate of lateral crystallization is 0.04μm/min. This process, labeled MILC-MA, not only lowers the temperature but also reduces the time of crystallization. The crystallization mechanism during microwave annealing and the electrical properties of polycrystalline Si thin films are analyzed. This MILC-MA process has potential applications in large area electronics.

  20. Structural changes induced by thermal annealing in Cr/C multilayers

    International Nuclear Information System (INIS)

    Highlights: • We reported experimental results on thermal effects of Cr/C multilayer. • The period thicknesses of Cr/C multilayers expand or contract with different carbon layer thickness ratios upon 600 °C annealing. • More chromium carbide formed at the interfaces after annealing. - Abstract: The structural changes induced by thermal annealing in Cr/C multilayers were investigated. Cr/C multilayers with period thickness of 5 nm and bi-layer number of 30 were deposited by direct current magnetron sputtering, and characterized by using grazing incidence X-ray reflectivity, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The results suggest that the period thicknesses of Cr/C multilayers expand or contract with different carbon layer thickness ratios (the ratio of the carbon layer thickness to the multilayer period) upon annealing and the physical mechanism was explored in detail. Carbon layer in Cr/C multilayers become graphitized from amorphous state. Such graphitization of the carbon layer causes a decrease in its density, thus an increase in its thickness. The annealing process also causes a reduction in period due to the formation of denser carbide, which can be confirmed by the XPS results

  1. Measurement of magnetostriction and induced magnetic anisotropy by SAMR method in Co-rich stress + field annealed amorphous ribbons

    Science.gov (United States)

    Blanco, J. M.; González, J.; Vázquez, M.; Barandiarán, J. M.; Hernando, A.

    1991-10-01

    The saturation magnetostriction (λ s) and induced magnetic anisotropy ( Kind) in (Co 0.95Fe 0.05) 80Si 10B 10 annealed amorphous alloy ribbons have been measured at room temperature with the SAMR (small-angle magnetization rotation) method. The ribbons were annealed under simulataneous action of a stress and/or magnetic field. The variations of λ s and Kind show parallel trends in the cases of stress and stress+field annealings but not for single field annealing. These variations are connected with microstructural changes originated during the treatments.

  2. UV-induced blue thermoluminescence of annealed Na-rich aluminosilicates

    International Nuclear Information System (INIS)

    The luminescence properties of gemstones (silicates, carbonates, phosphates, etc.), are of interest since could be potentially employed as personal dosimeters not only in case of radiation accident or radiological terrorism where conventional monitoring was not established, but also as a UV personal dosimeter. We, herein, report on preliminary results of the UV-induced 480 nm-thermoluminescence (TL) response of a well-characterised natural albite (NaAlSi3O8) from Minas Gerais (Brazil) that, due to its high transparency, is used as gemstone. Different annealing on several aliquots (from 480 to 960 °C) induces several changes in the sensitivity of the sample probably associated with (i) dehydration and dehydroxylation processes and (ii) changes in the lattice structure increasing the Al/Si disorder giving rise to ionic self-diffusion of alkali atoms, thermal stress into atomic positions and variation in the concentration of alkali ions in planar defects. The complex structure of albite has several planar defects (twinning and exsolution interphases which contain hydroxyl groups, water molecules, etc.) that can act as luminescence centres. When the thermal preannealed samples are exposed to 1 h at 254.7 nm under lab conditions one can appreciate changes in the TL behaviour that allows us to think in the albite as a potential UV dosimeter. ©2006 Elsevier Ltd. All rights reserved. -- Highlights: •UV-induced blue TL of annealed albite is studied. •Different annealing on several aliquots (from 480 to 960 °C) induces several changes in the TL sensitivity. •Such changes are linked to dehydration, dehydroxylation processes and changes in the lattice structure. •The Al/Si disorder gives rise to alkali self-diffusion and thermal stresses

  3. LBIC measurement optimization to detect laser annealing induced defects in Si

    International Nuclear Information System (INIS)

    Highlights: ► LBIC tool using an UV wavelength as source has been developed. ► We have highlighted defects generated by the laser annealing process. ► Defects are localized at the edge of laser beam. ► A mapping of an annealed area has been realized. ► The mapping shows that the defects can be corrected by a single laser impact. - Abstract: Because of the short penetration depth of ultraviolet (UV) in semiconductor, the realization of UV sensors requires the reduction of the junction thickness. Excimer laser annealing (ELA) is a new annealing technical allowing to achieve a thin layer (sq < 350 Ω/sq) on n-type silicon substrate together with a good profile abruptness (<3 nm/dec). The small size of the laser beam requires a scanning procedure for processing large surfaces. That could generate non-homogeneities resulting in defect growth. In order to investigate these phenomena, we developed a Light Beam Induced Current (LBIC) measurement set-up. LBIC analyses consist in the measurement of the photocurrent generated by a localized irradiation of the sample. The presence of defects in the irradiated zone leads to a local decrease of the photo-current. Moreover, thanks to different probe beams with wavelengths ranging from 193 nm to 800 nm, we can control the depth of photo-carriers generation. Thus, we are able to perform a 3D-localization of the defects which helps in understanding their origins. We have developed and validated this detection method of defects generated in the ultra-thin junctions, down to thirty nanometers, with a spatial resolution of ten micrometers at the surface of the sample. First experimental results demonstrate that most of the defects are localized at the edge of the irradiated zone within the first ten nanometers from the surface.

  4. Ion-induced annealing and amorphization of isolated damage clusters in Si

    International Nuclear Information System (INIS)

    The interaction between high-energy ion irradiation and pre-existing damage clusters dispersed in single-crystal Si is discussed. Silicon substrates were predamaged by low-dose 150 keV Au ions. Post-irradiation by 600 keV Kr2+ ions resulted in either damage annealing or damage accumulation, depending on the substrate temperature. The transition temperature between these two different regimes is 420 K. These data are discussed and compared with the ion beam induced epitaxy and amorphization of continuous surface amorphous layers

  5. Ion-induced annealing and amorphization of isolated damage clusters in Si

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, A. (Instito di Metodologie e Tecnologie per la Microelettronica, CNR, Catania (Italy)); Priolo, F.; Rimini, E. (Dipartimento di Fisica, Corso Italia 57, I-95129 Catania (Italy)); Ferla, G. (SGS-Thomson, Stradale Primosole 50, I-95100 Catania (Italy))

    1990-06-25

    The interaction between high-energy ion irradiation and pre-existing damage clusters dispersed in single-crystal Si is discussed. Silicon substrates were predamaged by low-dose 150 keV Au ions. Post-irradiation by 600 keV Kr{sup 2+} ions resulted in either damage annealing or damage accumulation, depending on the substrate temperature. The transition temperature between these two different regimes is 420 K. These data are discussed and compared with the ion beam induced epitaxy and amorphization of continuous surface amorphous layers.

  6. Microtexture analysis of cold-rolled and annealed twinning-induced plasticity steel

    International Nuclear Information System (INIS)

    The microtexture evolution of cold-rolled and isochronally annealed Fe-24Mn-3Al-2Si-1Ni-0.06C twinning-induced plasticity steel is investigated by electron back-scattering diffraction. Novel deconstruction techniques are applied to cold-rolled and partially recrystallized maps. The formation of cold-rolling texture via composite slip/twin deformation pattern is corroborated by the relatively random spatial distribution of twinned and untwinned grains. Whereas the orientations of the newly nucleated grains are similar to the deformation texture, orientation-dependent, stored energy and second-order twinning contribute to the end-recrystallization texture.

  7. Structural changes in the crystal-amorphous interface of isotactic polypropylene film induced by annealing and γ-irradiation

    International Nuclear Information System (INIS)

    Annealing and radiation effects on the microstructures of isotactic polypropylenes, homopolymer and ethylene (<2.3 wt%) incorporated random copolymers, in the solid state were studied to get mechanistic insight into the modification and degradation of mechanical properties. The growth of helical conformation of isotactic chains in the crystal-amorphous interface was induced to greater extent by γ-irradiation, while the transition from smectic to monoclinic modifications in the crystal phase occurred simultaneously by annealing. The yield stress of the polypropylene films increased with the increased content of helical conformation as the result of annealing and/or γ-irradiation. (author)

  8. Hydrological Regimes of Small Catchments in the High Tatra Mountains Before and After Extraordinary Wind-Induced Deforestation

    Science.gov (United States)

    Holko, Ladislav; Hlavata, Helena; Kostka, Zdenek; Novak, Jan

    2009-01-01

    The paper presents the results of rainfall-runoff data analysis for small catchments of the upper Poprad River affected by wind-induced deforestation in November 2004. Before-event and afterevent measured data were compared in order to assess the impact of deforestation on hydrological regimes. Several characteristics were used including water balance, minimum and maximum runoff, runoff thresholds, number of runoff events, selected characteristics of events, runoff coefficients, and flashiness indices. Despite increased spring runoff minima, which in one catchment (Velick Creek) exceeded previously observed values after deforestation took place, it can be generally concluded that the impact of the deforestation was not clearly manifested in the analyzed hydrological data.

  9. Radiation-induced formation, annealing and ordering of voids in crystals: Theory and experiment

    International Nuclear Information System (INIS)

    Void ordering has been observed in very different radiation environments ranging from metals to ionic crystals bombarded with energetic particles. The void ordering is often accompanied by a saturation of the void swelling with increasing irradiation dose, which makes an understanding of the underlying mechanisms to be both of scientific significance and of practical importance for nuclear engineering. We show that both phenomena can be explained by the original mechanism based on the anisotropic energy transfer provided by self-focusing discrete breathers or quodons (energetic, mobile, highly localized lattice solitons that propagate great distances along close-packed crystal directions). The interaction of quodons with voids can result in radiation-induced 'annealing' of selected voids, which results in the void ordering under special irradiation conditions. We observe experimentally radiation-induced void annealing by lowering the irradiation temperature of nickel and copper samples pre-irradiated to produce voids or gas bubbles. The bulk recombination of Frenkel pairs increases with decreasing temperature resulting in suppression of the production of freely migrating vacancies (the driving force of the void growth). On the other hand, the rate of radiation-induced vacancy emission from voids due to the void interaction with quodons remains essentially unchanged, which results in void dissolution. The experimental data on the void shrinkage and void lattice formation obtained for different metals and irradiating particles are explained by the present model assuming the quodon propagation length to be in the micron range, which is consistent with independent data on the irradiation-induced diffusion of interstitial ions in austenitic stainless steel.

  10. Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

    International Nuclear Information System (INIS)

    We report the effects of isothermal annealing on the current component, the paramagnetic K0 centers, and charge accumulation, induced by exposing silicon nitride films and silicon nitride–silicon dioxide double-layer films to 4.9-eV ultraviolet (UV) illumination. The UV-induced current component decayed as a result of the isothermal annealing at temperatures ranging from 27 °C to 240 °C, and was induced once again by UV exposure following the annealing. The density of the current component showed a close correlation with the density of the K0 centers. Based on detailed analysis, we show that electron–hole pair generation in the bulk of the silicon nitride film is the possible source of the UV-induced current component. - Highlights: • We report the thermal stability of the UV-light-induced current in Si3N4 films. • The UV-induced current component decayed as a result of the thermal annealing. • The UV-induced current showed a high correlation with K0 center density. • We claim that electron–hole pair generation is the source of the current component

  11. Effect of high temperature annealing on ferromagnetism induced by energetic ion irradiation in FeRh alloy

    Energy Technology Data Exchange (ETDEWEB)

    Kosugi, S.; Fujita, Nao; Matsui, T.; Hori, F. [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Saitoh, Y. [Japan Atomic Energy Agency (JAEA-Takasaki), Takasaki, Gunma 370-1292 (Japan); Ishikawa, N.; Okamoto, Y. [Japan Atomic Energy Agency (JAEA-Tokai), Tokai, Ibaraki 319-1195 (Japan); Iwase, A., E-mail: iwase@mtr.osakafu-u.ac.j [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2011-05-01

    Effects of thermal annealing on ion-irradiation induced ferromagnetism of Fe-50at.%Rh bulk alloy and the related structural change were investigated by means of superconducting quantum interference device (SQUID) and extended X-ray absorption fine structure (EXAFS), respectively. Depending on the annealing temperature from 100 to 500 {sup o}C, the magnetization induced by 10 MeV iodine ion irradiation and the lattice structure of the alloy were remarkably changed. After 500 {sup o}C annealing, the magnetization and the lattice ordering of the alloy become similar to the states before the irradiation. The experimental result indicates that the thermal relaxation of irradiation-induced atomic disordering dominates the magnetic state of ion-irradiated Fe-50at.% Rh alloy.

  12. Aluminium-Induced Crystallization of Silicon Thin Film by Excimer Laser Annealing

    International Nuclear Information System (INIS)

    Polycrystalline silicon (poly-Si) film was fabricated by indirect process of re-crystallization of amorphous silicon (a-Si) thin film. This enhancement process is important to determine the performance of silicon thin film (STF). In this attempt, a fundamental study was carried out to enhance the crystallization of aluminium doped silicon thin film. An a-Si thin film was prepared by low pressure physical vapour deposition (PVD) and doped with 10 % aluminium. The aluminium-induced crystallization (AIC) process was carried out in two sequence steps. Firstly, the amorphous film was annealed by using conventional heat treatment at operating temperature of 350 degree Celsius. Secondly, the poly-Si underwent excimer laser annealing (ELA). The microstructure of thin film was analyzed using atomic force microscope (AFM). The results showed that, the grain size of the a-Si film is increased with the energy density of the excimer laser. The optimum grain size obtained is 129 nm corresponding to energy density of 356 mJ cm-2. (author)

  13. Air annealing induced transformation of cubic CdSe microspheres into hexagonal nanorods and micro-pyramids

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, Institute of Science, Mumbai 400032, M.S. (India); Lu, Shih-Yuan, E-mail: sylu@mx.nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsin-Chu 30013, Taiwan (China)

    2015-08-15

    Highlights: • Nanocrystalline CdSe thin films were deposited using inexpensive CBD method. • Air annealing induced structural and interesting morphological transformation. • The as-deposited CdSe thin films showed a blue shift in its optical spectra. • The films showed a red shift in their optical spectra after annealing. - Abstract: CdSe thin films have been deposited onto glass substrates using a chemical bath deposition method at relatively low temperatures (40 °C). The precursors used for the deposition of the thin films are cadmium nitrate hexahydrate, freshly prepared sodium selenosulfate solution and aqueous ammonia solution as a complex as well as pH adjusting reagent. In order to study the influence of air annealing on their physicochemical properties, the as-deposited CdSe thin films were further annealed at 200 °C and 400 °C for 3 h in air atmosphere. Significant changes in the morphology and photonic properties were clearly observed after the thermal annealing of the CdSe thin films. The as-deposited CdSe films grow with the cubic phase that transforms into mixed cubic and hexagonal wurtzite phase with improved crystalline quality of the films after the air annealing. Morphological observation reveals that the as-deposited thin films grow with multilayer that consists of network or mesh like structure, uniformly deposited on the glass substrate over which microspheres are uniformly distributed. After air annealing, CdSe nanorods emerged from the microspheres along with conversion of few microspheres into micro-pyramids. The UV–visible study illustrates that the as-deposited thin film shows blue shifts in its optical spectrum and the spectrum was red-shifted after annealing the CdSe thin films. The band gap of the CdSe thin films were found to be decreased after the thermal treatment.

  14. Ion implantation induced defects in 6H-SiC and their annealing behaviour

    International Nuclear Information System (INIS)

    Fourfold Al+ implantations into 6H-SiC have been carried out in order to create a laterally structured p-doped layer. This way, a 400 nm thick box-shaped Al profile with a concentration plateau of 5 x 1019 cm-3 buried 200 nm below the SiC surface could be realized. The defects caused by the ion implantation should be minimized by implantation at higher substrate temperatures and post implantation annealing. In addition to the traditional furnace annealing a flash lamp annealing has been used. The defect structure after implantation and annealing has been investigated by slow positron implantation spectroscopy (SPIS). It could be shown that vacancies and vacancy agglomerates can be removed using furnace annealing at 1650 C. However, dislocation loops in the implantation region remain stable at this temperature. Using flash lamp annealing a further defect removal could be observed. (orig.)

  15. Annealing Induced Transmission Improvements and Photoluminescence Reduction of ARROW Optofluidic Chips for Improved Fluorescence Detection

    OpenAIRE

    Parks, Joshua W.

    2012-01-01

    Effects of thermal annealing on liquid- and solid-core antiresonant reflective optical waveguides (ARROW) are herein investigated. Transmission changes of 10 to 1000 fold increases are observed post annealing at either 300 or 700 °C. Furthermore, upon 700 °C annealing, the detectable photoluminescence of tantalum oxide cladding layers is reduced to half that of its original value. The suggestible cause for change in transmission is increased modal confinement within the ridge waveguid...

  16. Precipitate-induced R-phase in martensitic transformation of as-spun and annealed Ti51Ni49 ribbons

    International Nuclear Information System (INIS)

    Differential scanning calorimetry (DSC) results indicate that a two-step B2 → R → B19' martensitic transformation and a one-step B19' → B2 transformation exhibit in as-spun and in 200-600 oC annealed Ti51Ni49 ribbons. Guinier-Preston (GP) zones and Ti2Ni precipitates are formed in ribbons annealed at ≤300 oC and ≥400 oC, respectively, and a conspicuous increase of DSC transformation peak temperature occurs in between 300 oC and 400 oC. The sizes of GP zones and Ti2Ni precipitates increase with increased annealing temperature. Transmission electron microscope (TEM) observations show that GP zones can induce the R-phase and both of them are formed along B2 directions. DSC and TEM tests show that Ti2Ni precipitates can induce the R-phase more than GP zones and the induced R-phase plates are also found along B2 directions. Experimental results show that the growing direction of R-phase plates is strongly confined by that of GP zones and Ti2Ni precipitates. The length of R-phase plates can reach about 2 μm in 300 oC annealed ribbon.

  17. The structure, bond strength and apatite-inducing ability of micro-arc oxidized tantalum and their response to annealing

    Science.gov (United States)

    Wang, Cuicui; Wang, Feng; Han, Yong

    2016-01-01

    In this study, the tantalum oxide coatings were formed on pure tantalum (Ta) by micro-arc oxidation (MAO) in electrolytic solutions of calcium acetate and β-glycerophosphate disodium, and the effect of the applied voltage on the microstructure and bond strength of the MAO coatings was systematically investigated. The effect of annealing treatment on the microstructure, bond strength and apatite-inducing ability of the MAO coatings formed at 350 and 450 V was also studied. The study revealed that during the preparation of tantalum oxide coatings on Ta substrate by MAO, the applied voltage considerably affected the phase components, morphologies and bond strength of the coatings, but had little effect on surface chemical species. After annealing treatment, newly formed CaTa4O11 phase mainly contributed to the much more stronger apatite-inducing ability of the annealed tantalum oxide coatings than those that were not annealed. The better apatite-inducing ability of the MAO coatings formed at 450 V compared to those formed at 350 V was attributed to the less amorphous phase and more crystalline phase as well as more Ca and P contained in the MAO coatings with increasing the applied voltage.

  18. Dynamics of metal-induced crystallization of ultrathin Ge films by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Yuanxun; Huang, Shujuan; Shrestha, Santosh; Conibeer, Gavin [School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney 2052 (Australia)

    2015-12-07

    Though Ge crystallization has been widely studied, few works investigate metal-induced crystallization of ultrathin Ge films. For 2 nm Ge films in oxide matrix, crystallization becomes challenging due to easy oxidation and low mobility of Ge atoms. Introducing metal atoms may alleviate these problems, but the functions and the behaviours of metal atoms need to be clarified. This paper investigates the crystallization dynamics of a multilayer structure 1.9 nm Ge/0.5 nm Al/1.5 nm Al{sub 2}O{sub 3} under rapid thermal annealing (RTA). The functions of metal atoms, like effective anti-oxidation, downshifting Raman peaks, and incapability to decrease crystallization temperature, are found and explained. The metal behaviours, such as inter-diffusion and defect generation, are supported with direct evidences, Al-Ge nanobicrystals, and Al cluster in Ge atoms. With these understandings, a two-step RTA process achieves high-quality 2 nm nanocrystal Ge films with Raman peak at 298 cm{sup −1} of FWHM 10.3 cm{sup −1} and atomic smooth interfaces.

  19. Ionization-induced annealing of pre-existing defects in silicon carbide

    Science.gov (United States)

    Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.; Chisholm, Matthew F.; Liu, Peng; Xue, Haizhou; Weber, William J.

    2015-08-01

    A long-standing objective in materials research is to effectively heal fabrication defects or to remove pre-existing or environmentally induced damage in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization can effectively anneal pre-existing defects and restore the structural order. The threshold determined for this recovery process reveals that it can be activated by 750 and 850 keV Si and C self-ions, respectively. The results conveyed here can contribute to SiC-based device fabrication by providing a room-temperature approach to repair atomic lattice structures, and to SiC performance prediction as either a functional material for device applications or a structural material for high-radiation environments.

  20. Confined conversion of CuS nanowires to CuO nanotubes by annealing-induced diffusion in nanochannels

    OpenAIRE

    Mu Cheng; He Junhui

    2011-01-01

    Abstract Copper oxide (CuO) nanotubes were successfully converted from CuS nanowires embedded in anodic aluminum oxide (AAO) template by annealing-induced diffusion in a confined tube-type space. The spreading of CuO and formation of CuO layer on the nanochannel surface of AAO, and the confinement offered by AAO nanochannels play a key role in the formation of CuO nanotubes.

  1. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  2. Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing

    International Nuclear Information System (INIS)

    Highlights: • No observable secondary phases were found in the sample by using IBIEC annealing on Mn-implanted GaAs thin film. It is different from other Mn-implanted GaAs treated with rapid thermal annealing or furnace thermal annealing. • The ferromagnetic dipole moment is correlated with co-doped Mg ions. • We found significant anisotropy in magnetic measurement. - Abstract: In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized

  3. [Enlightenment and deliberation after treatment for extraordinary injuries].

    Science.gov (United States)

    Li, Zongyu; Liu, Rui; Mao, Ye

    2015-12-01

    With the development of modern society, the range of disease spectrum is changing, and risk factors leading to human trauma and damage are also in the shift. In addition to the extraordinary burns in the traditional sense, we also call extraordinary injury as damage induced by some of extraordinary insults in the past. In recent years, damage to skin and soft tissue caused by an extraordinary injury showed a gradually increasing trend. Manifestations of the wound of an extraordinary injury are various and its clinical treatment is very difficult, often requiring exceptional systemic comprehensive treatments. Currently, it is the duty of colleagues in the burn unit to actively deliberate about their realities regarding the following aspects: to accurately define the concept and scope of extraordinary injury, to include it into the range of clinical research and treatment of burns, to fully use professional skills of burn surgeons in dealing with wounds, and to effectively treat the patients through learning and mastering treatment skills of other clinical disciplines for treatment of extraordinary injury. PMID:26837245

  4. Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures

    International Nuclear Information System (INIS)

    Si-SiO2 structures irradiated with 11-MeV electrons for 10 s and then implanted with B+ ions with an energy of 10 keV at a dose of 1.0 x 1012 cm-2 through the oxide were annealed at different temperatures. MOS capacitors including such oxide layers were studied by quasi-static C/V and thermally stimulated current (TSC) methods. A comparison of the radiation defect annealing of double-treated (electron-irradiated and ion-implanted) samples and of implanted-only samples was carried out. It is shown that a preceding low-dose high-energy electron irradiation of the samples leads to a lowering of the annealing temperature of radiation defects introduced by ion implantation. After annealing at 500 C for 15 min, no TSC spectra for the double-treated samples were observed. The spectra of the other samples (which were not previously irradiated) showed that after the same thermal treatment only some of the radiation defects introduced by ion implantation are annealed. The difference between the annealed interface state density of previously electron-irradiated and current MOS structures is also demonstrated. A possible explanation of the results is proposed. (orig.)

  5. Annealing induced structural evolution and electrochromic properties of nanostructured tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ching-Lin [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Lin, Chung-Kwei [School of Dental Technology, Taipei Medical University, Taipei City 110, Taiwan, ROC (China); Wang, Chun-Kai [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Wang, Sheng-Chang [Department of Mechanical Engineering, Southern Taiwan University, Tainan 710, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: JLH888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2013-12-31

    The effect of microstructure on the optical and electrochemical properties of nanostructured tungsten oxide films was evaluated as a function of annealing temperature. The films using block copolymer as the template were prepared from peroxotungstic acid (PTA) by spin-coating onto the substrate and post-annealed at 250–400 °C to form tungsten oxide films with nanostructure. The microstructure of the films was measured by X-ray diffraction and surface electron microscopy. The films annealed at temperatures below 300 °C are characterized by amorphous or nanocrystalline structures with a pore size of less than 10 nm. The evaluated annealing temperature caused a triclinic crystalline structure and microcracks. Cyclic voltammetry measurements were performed in a LiClO{sub 4}-propylene carbonate electrolyte. The results showed that the ion inserted capacity were maximized for films annealed at 300 °C and decreased with the increasing of annealing temperature. The electrochromic properties of the nanostructured tungsten oxide films were evaluated simultaneously by potentiostat and UV–vis spectroscopy. The films annealed at 300 °C exhibit high transmission modulation (∆T ∼ 40%) at λ = 633 nm and good kinetic properties. As a result, the correlation between the microstructure and kinetic properties was established, and the electrochromic properties have been demonstrated. - Highlights: • Surfactant-assisted WO{sub 3} films have been prepared by sol–gel method. • Nanostructure of porous WO{sub 3} film is retained after crystallization. • Kinetic properties of WO{sub 3} can be improved by nanostructure and crystallinity.

  6. Microstructure and laser-induced damage threshold of ZrO2 coatings dependence on annealing temperature

    International Nuclear Information System (INIS)

    ZrO2 coatings were deposited on different substrates of Yb:YAG and fused silica by electron beam evaporation. After annealed for 12 h at 673 and 1073 K, respectively, weak absorption of coatings was measured by surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was determined also. The crystalline phase of ZrO2 coatings and the size of the crystal grain were investigated by X-ray diffraction. It was found that microstructure of ZrO2 coatings was dependent on both annealing temperature and substrate structure, and coatings containing monoclinic phases had higher damage threshold than others. Due to the strong absorption of Yb:YAG, damage threshold of coatings on Yb:YAG was much less than that on fused silica

  7. Microstructure and laser-induced damage threshold of ZrO{sub 2} coatings dependence on annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Tian Guanglei; Huang Jianbing; Wang Tao; He Hongbo; Shao Jianda

    2005-01-15

    ZrO{sub 2} coatings were deposited on different substrates of Yb:YAG and fused silica by electron beam evaporation. After annealed for 12 h at 673 and 1073 K, respectively, weak absorption of coatings was measured by surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was determined also. The crystalline phase of ZrO{sub 2} coatings and the size of the crystal grain were investigated by X-ray diffraction. It was found that microstructure of ZrO{sub 2} coatings was dependent on both annealing temperature and substrate structure, and coatings containing monoclinic phases had higher damage threshold than others. Due to the strong absorption of Yb:YAG, damage threshold of coatings on Yb:YAG was much less than that on fused silica.

  8. Isochronal annealing study of X-ray induced defects in single- and double-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Toshiya; Yamamoto, Yuki; Itoh, Chihiro [Department of Materials Science and Chemistry, Wakayama University, Wakayama 640-8510 (Japan); Kisoda, Kenji [Department of Physics, Wakayama University, Wakayama 640-8510 (Japan)

    2013-09-21

    X-ray induced defects in single-walled (SWCNTs) and double-walled carbon nanotubes (DWCNTs) were characterized by Raman scattering spectroscopy. Frenkel defects, interstitial-vacancy pairs, were revealed to form in both SWCNTs and DWCNTs after X-ray irradiation because these defects were entirely healed by thermal annealing. In order to clarify the structure of the X-ray induced defect in SWCNT and DWCNT, isochronal-annealing experiments were performed on the irradiated samples and the activation energy for defect healing was estimated. The intensity of D band (defect induced band) on Raman spectra was used as a measure of the density of X-ray induced defects. The experimental results were in good agreement with the simulated values using second order reaction model, which indicated that the defect healing was determined by the migration energy of interstitials on the carbon layer. We also found that the activation energy for defect healing of SWCNT and DWCNT were around 0.5 eV and 0.32 eV, respectively. The X-ray induced defects in SWCNTs were more stable than those in DWCNTs. Compared these estimated activation energies to previous theoretical reports, we concluded that bridge and/or dumbbell interstitials are formed in both SWCNT and DWCNT by X-ray irradiation.

  9. Thermal annealing induced structural and optical properties of Se72Te25In3 thin films

    Science.gov (United States)

    Pathak, H. P.; Shukla, Nitesh; Kumar, Vipin; Dwivedi, D. K.

    2016-05-01

    Thin films of a- Se72Te25In3 were prepared by vacuum evaporation technique in a base pressure of 10-6 Torr on to well cleaned glass substrate. a-Se72Te25In3 thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the absorption coefficient of these films. The optical band gap of as prepared and annealed films as a function of photon energy has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

  10. Annealing induced absorption phenomena in PbWO.sub.4 ./sub

    Czech Academy of Sciences Publication Activity Database

    Boháček, Pavel; Nikl, Martin

    2005-01-01

    Roč. 537, - (2005), s. 86-88. ISSN 0168-9002 Grant ostatní: NATO(XX) SfP 973510 Institutional research plan: CEZ:AV0Z10100521 Keywords : Lead tungstate * annealing * absorption Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.224, year: 2005

  11. Structural transformation and charge transfer induced ferroelectricity and magnetism in annealed YMnO3

    Directory of Open Access Journals (Sweden)

    Sheng-Hsu Liu

    2011-09-01

    Full Text Available Multiferroic materials such as YMnO3, which uniquely exhibit ferroelectricity and magnetism simultaneously, have been extensively studied for spintronic device applications. However, the origin of multiferroicity remains poorly understood. In this study, the structural phases of YMnO3 ceramics and their lattice distortions after careful annealing were investigated to explain the origins of their multiferroicity. A structural transition from the orthorhombic to the hexagonal phase was observed when the annealing temperature reached around 1100 °C. This structural transformation also results in a magnetic transition from 3D Mn-O-Mn to 2D Mn-O-Mn superexchange coupling. The ferroelectricity was enhanced by escalation of the structural distortion caused by the rising annealing temperature. The annealing effect also results in the re-hybridization of the electronic structure of YMnO3. X-ray absorption near-edge spectra suggest that there is charge transfer from the Y-OT (apical oxygen bonds of Y 4d-O 2p hybridized states to the OT-Mn bonds of Mn 3d-O 2p hybridized states, which is responsible for the enhanced ferroelectricity. This approach could be used to probe the origin of the ferroelectricity and multiferroic properties in rare-earth manganites.

  12. Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

    International Nuclear Information System (INIS)

    The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The VS degradation levels depend on the dose rates. The VS degradation mechanism induced by dose rate and annealing effects is analyzed. The VS at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during 60Co γ radiation. The VS degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs

  13. Thermal annealing of high dose radiation induced damage at room temperature in alkaline. Stored energy, thermoluminescence and coloration

    International Nuclear Information System (INIS)

    The possible relation between stored energy, thermoluminescence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminescence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KC1 samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose.Capacity of alkali halides to store energy by irradiation increases as the cation size decreases. (Author) 51 refs

  14. Fast laser annealing induced exchange bias in poly-crystalline BiFeO3/Co bilayers

    Science.gov (United States)

    Zhang, Y. Q.; Ruan, X. Z.; Liu, B.; Xu, Z. Y.; Xu, Q. Y.; Shen, J. D.; Li, Q.; Wang, J.; You, B.; Tu, H. Q.; Gao, Y.; Zhang, W.; Xu, Y. B.; Du, J.

    2016-03-01

    The conventional field cooling process for antiferromagnetic/ferromagnetic bilayer system might strongly damage the interface of BiFeO3 (BFO) with metallic ferromagnetic layer, leading to significant deterioration of exchange bias (EB). In this paper, a field cooling process with fast laser annealing has been proposed and applied on polycrystalline-BFO/Co bilayers, which can effectively modify the EB. In those samples with obvious EB, it is found that the exchange field (HE) increases abruptly when the laser fluence rises to a critical value, and decreases when the laser fluence is large enough. On the other hand, in those samples with negligible HE, EB could be easily induced after field cooling with proper laser fluence. In addition, the sign of HE could also be changed, depending on the direction of the cooling field. In contrast, after field cooling by conventional heat treatment, EB could be neither induced nor enhanced. The feasibility of fast laser annealing accompanied with field cooling to enhance or induce EB in the BFO/Co bilayer can be understood by much less interfacial diffusion in comparison with conventional field cooling.

  15. Annealing effects on microstructure and laser-induced damage threshold of HfO2/SiO2 multilayer mirrors.

    Science.gov (United States)

    Jena, Shuvendu; Tokas, Raj Bahadur; Rao, K Divakar; Thakur, Sudhakar; Sahoo, Naba Kishore

    2016-08-01

    HfO2/SiO2 periodic multilayer high reflection mirrors have been prepared by a reactive electron-beam evaporation technique. The deposited mirrors were annealed in the temperature range from 300°C to 500°C. The effects of annealing on optical, microstructural, and laser-induced damage characteristics of the mirrors have been investigated. The high reflection band of the mirror shifts toward a shorter wavelength with increasing annealing temperature. As-deposited and annealed mirrors show polycrystalline structure with a monoclinic phase of HfO2. Crystalinity and grain size increase upon annealing. The laser-induced damage threshold (LIDT) has been assessed using a 532 nm pulsed laser at a pulse width of 7 ns. The LIDT value of the multilayer mirror increases from 44.1  J/cm2 to 77.6  J/cm2 with annealing up to 400°C. The improvement of LIDT with annealing is explained through oxygen vacancy defects as well as grain-size-dependent thermal conductivity. Finally, the observed laser damage morphology, such as circular scalds and ablated multilayer stacks with terrace structure, are analyzed. PMID:27505395

  16. Study of thermal annealing induced plasmonic bleaching in Ag:TiO2 nanocomposite thin films

    International Nuclear Information System (INIS)

    Graphical abstract: The plasmonic bleaching observed in Ag:TiO2 nanocomposite thin films, when annealed at 450 °C in Ar environment, is due to the dissociation of Ag nanoparticles followed by diffusion of Ag atoms outside the nanocomposite film and into substrate. - Plasmonic properties of metal nanomaterials critically affect on thermal treatments. One of such effects is ‘plasmonic-bleaching’ observed in ‘atom beam co-sputtering’ derived Ag:TiO2 nanocomposite thin films, when annealed at 450 °C. The origin of bleaching is investigated using glancing angle X-ray diffraction and Rutherford backscattering spectroscopy. The kinetics of Ag nanoparticles during the deposition and after thermal treatment is presented to understand involved host-matrix interactions. Based on Rutherford Materials Program simulation, possible mechanism of bleaching is presented

  17. Computer experiment studies on mechanisms for irradiation induced defect production and annealing processes. Final report

    International Nuclear Information System (INIS)

    This research is based on pair potentials used in the Brookhaven work. It extends their use in defect production simulations to the 5 MeV range and characterizes the short term annealing of the primary defect states. Defect properties and interactions are studied. Defect interactions include carbon, helium, and misfit metallic substitutional impurity interactions with vacancy and interstitial defects as well as vacancy-vacancy, interstitial-interstitial and vacancy-interstitial interactions

  18. Quantum annealing

    OpenAIRE

    Ruiz, Alfonso de la Fuente

    2014-01-01

    Brief description on the state of the art of some local optimization methods: Quantum annealing Quantum annealing (also known as alloy, crystallization or tempering) is analogous to simulated annealing but in substitution of thermal activation by quantum tunneling. The class of algorithmic methods for quantum annealing (dubbed: 'QA'), sometimes referred by the italian school as Quantum Stochastic Optimization ('QSO'), is a promising metaheuristic tool for solving local search problems in mult...

  19. Marketplace Tensions in Extraordinary Experiences

    OpenAIRE

    Gülnur Tumbat; Belk, Russell W.

    2011-01-01

    Researchers have analyzed various forms of extraordinary consumption experiences, using Victor Turner's conceptualization of antistructure with a particular focus on their rather romantic and communal aspects. While such a focus contributed greatly to our understanding of these experiences, it also resulted in overlooking much of their individuated characteristics such as boundaries, conflicts, competition, and positional struggles at the interpersonal level. This ethnographic study of commer...

  20. Growth and surface modification of LaFeO3 thin films induced by reductive annealing

    International Nuclear Information System (INIS)

    Highlights: • LaFeO3 was grown by molecular beam epitaxy on ZrO2:Y2O3. • The film was highly oriented but not single crystalline. • Angle resolved XPS revealed differences between surface and bulk oxygen. • Annealing the film in vacuum resulted in the sequential reduction of Fe cations. • A greater degree of Fe reduction was found at the surface. - Abstract: The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications

  1. Annealing induced defects in SiC, SiO{sub x} single layers, and SiC/SiO{sub x} hetero-superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Kaining; Aeberhard, Urs; Beyer, Wolfhard; Astakhov, Oleksandr; Koehler, Florian; Finger, Friedhelm; Carius, Reinhard; Rau, Uwe [IEK5-Photovoltaik, Forschungszentrum Juelich, Leo-Brandt-Strasse, 52425 Juelich (Germany); Breuer, Uwe [Central Division of Analytical Chemistry (ZCH), Forschungszentrum Juelich, Leo-Brandt-Strasse, 52425 Juelich (Germany)

    2012-10-15

    SiC/SiO{sub x} hetero-superlattices as well as single layers of SiC and SiO{sub x} were fabricated and annealed at various annealing temperatures to investigate the evolution of annealing induced defects in these materials. We show that in SiC and SiO{sub x} materials and in SiC/SiO{sub x} multilayer system, crystallization, atomic diffusion, structural reconstruction, and hydrogen effusion take place upon annealing with different characteristic temperature dependences. The dependence of the spin densities on annealing temperature is explained as an overlap of the temperature dependence of the creation of additional dangling bonds due to hydrogen effusion and of the healing of dangling bonds due to element motion during the structural reconstruction. The stronger increase of spin density upon annealing in SiC as compared to SiO{sub 1.2} is ascribed to the effusion of a higher amount of hydrogen and the less efficient atomic diffusion up to the annealing temperature of 1050 C. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. COALESCENCE INDUCED GRADIENT MORPHOLOGY NEAR A WALL IN PHASE SEPARATED POLYMER BLENDS DURING QUIESCENT ANNEALING

    Institute of Scientific and Technical Information of China (English)

    Wei Yu; Chi-xing Zhou; De-lu Zhao

    2002-01-01

    A fast coalescence mechanism is proposed to account for the wall effect on the formation of gradient morphologyin phase separated polymer blends during quiescent annealing. The existence of solid wall with high polarity is believed tochange the potential field around the dispersed particles near the wall. This additional potential interaction between the solidwall and the dispersed particles causes faster coalescence of the dispersed particles near the wall than in the bulk. Thegradient phase morphology thus formed can be predicted by combining the wall-particle interaction and the touch-coalescence mechanism. The effect of interfacial tension on the gradient morphology is also discussed.

  3. Growth and surface modification of LaFeO3 thin films induced by reductive annealing

    Science.gov (United States)

    Flynn, Brendan T.; Zhang, Kelvin H. L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

    2015-03-01

    The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications.

  4. Effect of strain-induced martensite on the formation of nanocrystalline 316L stainless steel after cold rolling and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Eskandari, M.; Najafizadeh, A. [Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Kermanpur, A., E-mail: ahmad_k@cc.iut.ac.ir [Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

    2009-08-30

    This work aimed to study the effects of cold rolling temperature and pre-strain on the volume fraction of strain-induced martensite in order to obtain nanocrystalline structures of 316L stainless steel. Hot rolling and cold rolling followed by annealing treatments were conducted under different conditions. The microstructures and the volume fraction of phases were characterized by scanning electron microscopy and feritscope tests, respectively. The hardness and tensile properties of the specimens were also measured. The results showed that decreasing the rolling temperature while increasing pre-strain leads to increased the volume fraction of martensite accompanied by decreased saturating strain and, further, that this behavior affects the degree of grain refinement. The smallest grain size of about 30-40 nm was obtained via 30% pre-strain at 523 K and subsequent conventional cold rolling at 258 K with a strain and a strain rate of 95% and 0.5 s{sup -1}, respectively, followed by annealing at 1023 K for 300 s. Uniaxial tensile tests at room temperature showed that this specimen exhibits very high tensile strength of about 1385 MPa.

  5. Effect of strain-induced martensite on the formation of nanocrystalline 316L stainless steel after cold rolling and annealing

    International Nuclear Information System (INIS)

    This work aimed to study the effects of cold rolling temperature and pre-strain on the volume fraction of strain-induced martensite in order to obtain nanocrystalline structures of 316L stainless steel. Hot rolling and cold rolling followed by annealing treatments were conducted under different conditions. The microstructures and the volume fraction of phases were characterized by scanning electron microscopy and feritscope tests, respectively. The hardness and tensile properties of the specimens were also measured. The results showed that decreasing the rolling temperature while increasing pre-strain leads to increased the volume fraction of martensite accompanied by decreased saturating strain and, further, that this behavior affects the degree of grain refinement. The smallest grain size of about 30-40 nm was obtained via 30% pre-strain at 523 K and subsequent conventional cold rolling at 258 K with a strain and a strain rate of 95% and 0.5 s-1, respectively, followed by annealing at 1023 K for 300 s. Uniaxial tensile tests at room temperature showed that this specimen exhibits very high tensile strength of about 1385 MPa.

  6. Effect of Annealing in Magnetic Field on Ferromagnetic Nanoparticle Formation in Cu-Al-Mn Alloy with Induced Martensite Transformation.

    Science.gov (United States)

    Titenko, Anatoliy; Demchenko, Lesya

    2016-12-01

    The paper considers the influence of aging of high-temperature phase on subsequent martensitic transformation in Cu-Al-Mn alloy. The morphology of behavior of martensitic transformation as a result of alloy aging under annealing in a constant magnetic field with different sample orientation relatively to the field direction and without field was studied for direct control of the processes of martensite induction at cooling. Temperature dependences of electrical resistance, magnetic susceptibility, and magnetization, as well as field dependences of magnetization, and phase composition were found. The tendency to the oriented growth of precipitated ferromagnetic phase nanoparticles in a direction of applied field and to an increase of their volume fraction under thermal magnetic treatment of material that favors a reversibility of induced martensitic transformation is observed. PMID:27142875

  7. Effect of Annealing in Magnetic Field on Ferromagnetic Nanoparticle Formation in Cu-Al-Mn Alloy with Induced Martensite Transformation

    Science.gov (United States)

    Titenko, Anatoliy; Demchenko, Lesya

    2016-05-01

    The paper considers the influence of aging of high-temperature phase on subsequent martensitic transformation in Cu-Al-Mn alloy. The morphology of behavior of martensitic transformation as a result of alloy aging under annealing in a constant magnetic field with different sample orientation relatively to the field direction and without field was studied for direct control of the processes of martensite induction at cooling. Temperature dependences of electrical resistance, magnetic susceptibility, and magnetization, as well as field dependences of magnetization, and phase composition were found. The tendency to the oriented growth of precipitated ferromagnetic phase nanoparticles in a direction of applied field and to an increase of their volume fraction under thermal magnetic treatment of material that favors a reversibility of induced martensitic transformation is observed.

  8. Investigation on the Neff reverse annealing effect using TSC/I-DLTS: relationship between neutron induced microscopic defects and silicon detector electrical degradations

    International Nuclear Information System (INIS)

    Neutron induced defect levels in high resistivity silicon detectors have been studied using a current-based macroscopic defect analysis system: thermally stimulated current (TSC) and current deep level transient spectroscopy (I-DLTS). These studies have been correlated to the traditional C-V, I-V, and transient current and charge techniques (TCT/TChT) after neutron radiation and subsequent thermal anneals. It has been found that the increases of the space charge density, Neff, in irradiated detectors after thermal anneals (Neff reverse anneal) correspond to the increases of deep levels in the silicon bandgap. In particular, increases of the double vacancy center (V-V and V-V--) and/or Ci-Oi level have good correlations with the Neff reverse anneal. It has also been observed that the leakage current of highly irradiated (Φn>1013 n/cm2) detectors increases after thermal anneals, which is different from the leakage current annealing behavior of slightly irradiated (Φn13 n/cm2) detectors. It is apparent that V-V center and/or Ci-Oi level play important roles in both Neff and leakage current degradations for highly irradiated high resistivity silicon detectors. (orig.)

  9. Radiation-induced luminescence images and TL-property changes with thermal annealing treatment on Japanese twin quartz

    International Nuclear Information System (INIS)

    Two-dimensional patterns of radiation-induced phenomena, including thermoluminescence (TL), after-glow (AG) and colour centre (CC) images, showed significantly different behaviour between the core and outer parts of a Japanese twin quartz slice. Intense smoky colouration and blue luminescence appeared in the core, giving a good inverse correlation with the distribution of aluminium impurity. In addition, there was a characteristic red AG in the outer parts of the crystal. The response to radiation of the blue TL (BTL) from the outer part of the as-received quartz slice segments revealed poor BTL sensitivity and a tendency to saturation at low doses. The outer part was especially characterized by high contents of both aluminium and OH impurity, although the annealing treatments greatly eliminated the OH concentrations as water vapour. The annealing treatment (50 hr at 1000 deg. C) of the slice segments brought on a remarkable changes to the TL-property; the core part was converted from BTL having a broad peak around 480 nm at 230 deg. C into a new BTL peak around 100 deg. C, and broad spectrum ranging from BTL to red TL (RTL) at 300 deg. C. The outer part was characterized by a change into a new single 100 deg. C BTL peak from some weak peaks of the as-received segment. On the basis of these radiation-induced phenomena, a new formation mechanism for twin quartz is proposed. We propose that the core part was formed first and was followed by the formation of the out part from hydrothermal solution and with a higher aluminium concentration

  10. Effects of thermal-annealing and processing-additive treatment on crystallization-induced phase separation in organic solar cells utilizing octapentyl tetrabenzotriazaporphyrins

    International Nuclear Information System (INIS)

    Effects of thermal-annealing and processing-additive treatment on crystallization-induced phase separation and photovoltaic performance in bulk heterojunction (BHJ) organic solar cells utilizing non-peripherally substituted octapentyl tetrabenzotriazaporphyrin (C5TBTAPH2) mixed in 1-(3-methoxycarbonyl)propyl-1-phenyl-(6,6)C71 ([70]PCBM) were reported. By using either thermal-annealing or processing-additive treatment, the C5TBTAPH2-crystallite sizes in the BHJ films were enlarged and the power conversion efficiencies (PCEs) were increased due to improvement of the crystallization-induced phase separation. However, the optimum PCEs (4.2%) of the processing-additive treated devices were markedly higher than those PCEs (1.4%) of devices treated by thermal annealing. These results were discussed by taking the thermal properties and molecular aggregation of [70]PCBM into consideration. (paper)

  11. Extraordinary Vessels Needling for Vascular Dementia

    Institute of Scientific and Technical Information of China (English)

    YU Jin; LAI Xin-sheng; HUANG Qiu-tang; XIAO Yuan-chun

    2003-01-01

    Purpose To observe the clinical efficacy of extraordinary vessels needling in treating vascular dementia. Method 39 cases vascular dementia were treated by acupoints selected from the eight extraordinary meridians and the time needling techniques such as eight methods of spiritual turtle, in accordance with time period and pattern identifition. Results 2 cases were cured, 30 cases improved and 7 cases failed; the total effective rate was 82.1%. Conclusion Extraordinary vessels needling has positive effects in treating vascular dementia.

  12. Numerical investigation of temperature field Induced by dual wavelength lasers in sub-microsecond laser annealing technology for insulated gate bipolar transistor

    Science.gov (United States)

    Cui, GuoDong; Ma, Mingying; Wang, Fan; Sun, Gang; Lan, Yanping; Xu, Wen

    2015-07-01

    To enhance the performance of the Insulated Gate Bipolar Transistor (IGBT), sub-microsecond laser annealing (LA) is propitious to achieve maximal dopant activation with minimal diffusion. In this work, two different lasers are used as annealing resource: a continuous 808 nm laser with larger spot is applied to preheat the wafer and another sub-microsecond pulsed 527 nm laser is responsible to activate the dopant. To optimize the system's performance, a physical model is presented to predict the thermal effect of two laser fields interacting on wafer. Using the Finite-Element method (FEM), we numerically investigate the temperature field induced by lasers in detail. The process window corresponding to the lasers is also acquired which can satisfy the requirements of the IGBT's annealing.

  13. Simulated annealing versus quantum annealing

    Science.gov (United States)

    Troyer, Matthias

    Based on simulated classical annealing and simulated quantum annealing using quantum Monte Carlo (QMC) simulations I will explore the question where physical or simulated quantum annealers may outperform classical optimization algorithms. Although the stochastic dynamics of QMC simulations is not the same as the unitary dynamics of a quantum system, I will first show that for the problem of quantum tunneling between two local minima both QMC simulations and a physical system exhibit the same scaling of tunneling times with barrier height. The scaling in both cases is O (Δ2) , where Δ is the tunneling splitting. An important consequence is that QMC simulations can be used to predict the performance of a quantum annealer for tunneling through a barrier. Furthermore, by using open instead of periodic boundary conditions in imaginary time, equivalent to a projector QMC algorithm, one obtains a quadratic speedup for QMC, and achieve linear scaling in Δ. I will then address the apparent contradiction between experiments on a D-Wave 2 system that failed to see evidence of quantum speedup and previous QMC results that indicated an advantage of quantum annealing over classical annealing for spin glasses. We find that this contradiction is resolved by taking the continuous time limit in the QMC simulations which then agree with the experimentally observed behavior and show no speedup for 2D spin glasses. However, QMC simulations with large time steps gain further advantage: they ``cheat'' by ignoring what happens during a (large) time step, and can thus outperform both simulated quantum annealers and classical annealers. I will then address the question how to optimally run a simulated or physical quantum annealer. Investigating the behavior of the tails of the distribution of runtimes for very hard instances we find that adiabatically slow annealing is far from optimal. On the contrary, many repeated relatively fast annealing runs can be orders of magnitude faster for

  14. Modifications of the registration properties of charged particles in a CR-39 polymeric track detector induced by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Saad, A.F., E-mail: abdallahsaad56@hotmail.com [Physics Department, Faculty of Science, University of Benghazi, Benghazi (Libya); Hamed, N.A.; Abdalla, Y.K.; Tawati, D.M. [Physics Department, Faculty of Science, University of Benghazi, Benghazi (Libya)

    2012-09-15

    The thermal annealing behavior of alpha and fission fragment tracks, following exposure pre- and post-annealing, in a high polymer material of poly allyl diglycol carbonate (PADC), a form of CR-39, has been investigated as a function of temperature and time. Isothermal and isochronal annealing experiments were carried out on CR-39 polymeric detectors exposed to a {sup 252}Cf source. The yields of fission fragment and surviving alpha tracks were measured as a function of annealing time and temperature, as was the variation of fission track diameter with annealing time. The bulk and track etch rates were measured using alpha and fission fragment track diameters and the bulk etch rate was also measured by the weight loss method. The activation energy of annealing was determined using two different models based on the experimental results. This paper presents novel information showing that the annealed CR-39 detectors were demonstrated to be highly sensitive to the fission fragments, but not to alpha particles.

  15. Raman scattering in La1−xSrxFeO3−δ thin films: annealing-induced reduction and phase transformation

    International Nuclear Information System (INIS)

    Raman scattering in thin film La0.2Sr0.8FeO3−δ on MgO(0 0 1) collected at 300 K after different stages of annealing at selected temperatures T (300 K < T < 543 K, to 10 h) and analysis reveal changes in spectral characteristics due to a loss of oxygen, onset of oxygen vacancy-induced disorder, and activation of Raman-inactive modes that are attributed to symmetry lowering. The interpretation is further supported by carrier transport measurements under identical conditions showing orders of magnitude increase in the resistivity induced by oxygen loss. After prolonged annealing in air, evolution of the spectrum signals the appearance of a possible topotactic transformation of the crystal structure from that of the rhombohedral ABO3 perovskites to that of Brownmillerite-like structure consisting of octahedrally and tetrahedrally coordinated Fe atoms. (paper)

  16. Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Zappettini, A.; Zambelli, N.; Benassi, G.; Calestani, D. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Pavesi, M. [Istituto Materiali Elettronica e Magnetismo – Consiglio Nazionale delle Ricerche, Parma (Italy); Istituto di Fisica e Scienze della Terra, Università degli Studi di Parma, Parma (Italy)

    2014-06-23

    The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

  17. TESTAMENT IN EXTRAORDINARY CIRCUMSTANCES: THEORY AND PRACTICE

    Directory of Open Access Journals (Sweden)

    Popova J. A.

    2015-05-01

    Full Text Available The article explains the relevance of testaments, committed in extraordinary circumstances. The authors note, that the form of such testaments is considerably simpler. Nevertheless, it is compensated by necessity of further confirmation of fact that testament was committed in extraordinary circumstances by court. The conditions of validity of such testaments exposed to a detailed analysis in the article. The authors emphasize that for the recognition of circumstances as extraordinary, such circumstances should be unusual, exceptional, and create immediate threat of life, not threat to health of a citizen. The article contains the analysis of court decisions, which counter to these provisions. The study notes that the legislation does not allow for opportunity to commit testament in the extraordinary circumstances using the technical equipment. It is a gap in the legislation, considering the current conditions. The authors describe international experience of drawing up testaments verbally and came to the conclusion that such form is not acceptable in the Russian legislation. The article also notes the need for a more precise definition of “extraordinary circumstances” applied to inheritance relations. By the authors’ viewpoint, serious illness of the testator can’t be classified as extraordinary circumstance. The study is not only based on analysis of theoretical works of scientists, also on law enforcement practices. The authors of the article identified actual problems of current legislation and came to the conclusion of the necessity to improve the modern civil law

  18. Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

    Science.gov (United States)

    Szkudlarek, Aleksandra; Rodrigues Vaz, Alfredo; Zhang, Yucheng; Rudkowski, Andrzej; Kapusta, Czesław; Erni, Rolf; Moshkalev, Stanislav

    2015-01-01

    Summary In this paper we study in detail the post-growth annealing of a copper-containing material deposited with focused electron beam induced deposition (FEBID). The organometallic precursor Cu(II)(hfac)2 was used for deposition and the results were compared to that of compared to earlier experiments with (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB). Transmission electron microscopy revealed the deposition of amorphous material from Cu(II)(hfac)2. In contrast, as-deposited material from (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB) was nano-composite with Cu nanocrystals dispersed in a carbonaceous matrix. After annealing at around 150–200 °C all deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit due to the migration of Cu atoms from the carbonaceous matrix containing the elements carbon, oxygen, and fluorine. Post-irradiation of deposits with 200 keV electrons in a transmission electron microscope favored the formation of Cu nanocrystals within the carbonaceous matrix of freestanding rods and suppressed the formation on their surface. Electrical four-point measurements on FEBID lines from Cu(hfac)2 showed five orders of magnitude improvement in conductivity when being annealed conventionally and by laser-induced heating in the scanning electron microscope chamber. PMID:26425404

  19. A change in domain morphology in optical superlattice LiNbO sub 3 induced by thermal annealing

    CERN Document Server

    Lu Yan Qing; Luo Qi; Zhu Yong Yuan; Chen Xiang Fei; Xue Cheng Cheng; Ming Nai Ben

    1997-01-01

    Optical superlattice LiNbO sub 3 crystals were grown by the Czochralski method. The effect of thermal annealing below the Curie temperature on domain structures of a sample with good periodicity was studied. It was found that the periodic domain structure remained unchanged at annealing temperature lower than 1000 deg. C and began to deteriorate when annealed at above 1000 deg. C. A sample at 1100 deg. C for an hour almost changed to a single-domain structure except that a 60 mu m single-domain layer with reversed spontaneous polarization was formed at the edge of the sample. These results are useful for revealing the mechanism of formation of the periodic domain structure and designing a more favourable temperature field to improve the crystals' quality. A space-charge-field model was proposed to explain the phenomena. (author)

  20. Effect of high temperature annealing on ion-irradiation induced magnetization in FeRh thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tohki, A.; Aikoh, K.; Iwase, A.; Yoneda, K.; Kosugi, S. [Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Kume, K.; Batchuluun, T.; Ishigami, R. [Wakasa Wan Energy Research Center, Tsuruga, Fukui 914-0192 (Japan); Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

    2012-04-01

    Low temperature ferromagnetic FeRh with B2-type crystal structure was successfully synthesized by annealing of the excessively irradiated FeRh thin film samples having nonmagnetic A1-type crystal structure. The B2 phase transformed from the A1 phase by this process contained some amount of lattice defects, such as anti-site defects and vacancies, which made the magnetic spins of the sample aligned. These results imply that the combination of the process of the ion-beam irradiation and annealing of the film samples makes the magnetic state systematically controlled.

  1. Combined current-modulation annealing induced enhancement of giant magnetoimpedance effect of Co-rich amorphous microwires

    International Nuclear Information System (INIS)

    We report on a combined current-modulation annealing (CCMA) method, which integrates the optimized pulsed current (PC) and DC annealing techniques, for improving the giant magnetoimpedance (GMI) effect and its field sensitivity of Co-rich amorphous microwires. Relative to an as-prepared Co68.2Fe4.3B15Si12.5 wire, CCMA is shown to remarkably improve the GMI response of the wire. At 10 MHz, the maximum GMI ratio and its field sensitivity of the as-prepared wire were, respectively, increased by 3.5 and 2.28 times when subjected to CCMA. CCMA increased atomic order orientation and circumferential permeability of the wire by the co-action of high-density pulsed magnetic field energy and thermal activation energy at a PC annealing stage, as well as the formation of uniform circular magnetic domains by a stable DC magnetic field at a DC annealing stage. The magnetic moment can overcome eddy-current damping or nail-sticked action in rotational magnetization, giving rise to a double-peak feature and wider working field range (up to ±2 Oe) at relatively higher frequency (f ≥ 1 MHz)

  2. Combined current-modulation annealing induced enhancement of giant magnetoimpedance effect of Co-rich amorphous microwires

    Science.gov (United States)

    Liu, Jingshun; Qin, Faxiang; Chen, Dongming; Shen, Hongxian; Wang, Huan; Xing, Dawei; Phan, Manh-Huong; Sun, Jianfei

    2014-05-01

    We report on a combined current-modulation annealing (CCMA) method, which integrates the optimized pulsed current (PC) and DC annealing techniques, for improving the giant magnetoimpedance (GMI) effect and its field sensitivity of Co-rich amorphous microwires. Relative to an as-prepared Co68.2Fe4.3B15Si12.5 wire, CCMA is shown to remarkably improve the GMI response of the wire. At 10 MHz, the maximum GMI ratio and its field sensitivity of the as-prepared wire were, respectively, increased by 3.5 and 2.28 times when subjected to CCMA. CCMA increased atomic order orientation and circumferential permeability of the wire by the co-action of high-density pulsed magnetic field energy and thermal activation energy at a PC annealing stage, as well as the formation of uniform circular magnetic domains by a stable DC magnetic field at a DC annealing stage. The magnetic moment can overcome eddy-current damping or nail-sticked action in rotational magnetization, giving rise to a double-peak feature and wider working field range (up to ±2 Oe) at relatively higher frequency (f ≥ 1 MHz).

  3. Combined current-modulation annealing induced enhancement of giant magnetoimpedance effect of Co-rich amorphous microwires

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jingshun, E-mail: jingshun-liu@163.com, E-mail: faxiang.qin@gmail.com [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Qin, Faxiang, E-mail: jingshun-liu@163.com, E-mail: faxiang.qin@gmail.com [1D Nanomaterials Group, National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Chen, Dongming; Shen, Hongxian; Wang, Huan; Xing, Dawei; Sun, Jianfei [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Phan, Manh-Huong [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2014-05-07

    We report on a combined current-modulation annealing (CCMA) method, which integrates the optimized pulsed current (PC) and DC annealing techniques, for improving the giant magnetoimpedance (GMI) effect and its field sensitivity of Co-rich amorphous microwires. Relative to an as-prepared Co{sub 68.2}Fe{sub 4.3}B{sub 15}Si{sub 12.5} wire, CCMA is shown to remarkably improve the GMI response of the wire. At 10 MHz, the maximum GMI ratio and its field sensitivity of the as-prepared wire were, respectively, increased by 3.5 and 2.28 times when subjected to CCMA. CCMA increased atomic order orientation and circumferential permeability of the wire by the co-action of high-density pulsed magnetic field energy and thermal activation energy at a PC annealing stage, as well as the formation of uniform circular magnetic domains by a stable DC magnetic field at a DC annealing stage. The magnetic moment can overcome eddy-current damping or nail-sticked action in rotational magnetization, giving rise to a double-peak feature and wider working field range (up to ±2 Oe) at relatively higher frequency (f ≥ 1 MHz)

  4. Faster annealing schedules for quantum annealing

    OpenAIRE

    Morita, Satoshi

    2007-01-01

    New annealing schedules for quantum annealing are proposed based on the adiabatic theorem. These schedules exhibit faster decrease of the excitation probability than a linear schedule. To derive this conclusion, the asymptotic form of the excitation probability for quantum annealing is explicitly obtained in the limit of long annealing time. Its first-order term, which is inversely proportional to the square of the annealing time, is shown to be determined only by the information at the initi...

  5. Annealing effect on the optical properties and laser-induced damage resistance of solgel-derived ZrO2 films

    International Nuclear Information System (INIS)

    By modifying some structural characteristics, the annealing process can have considerable effects on the optical performance of the solgel-derived ZrO2 xerogel films. Annealing at increasing temperature from 150 deg. C to 750 deg. C gives rise to first an increase of refractive index from 1.63 (at 633 nm) to 1.93 and then a decrease to 1.86 with the watershed temperature of 550 deg. C. This can be associated with the evolutions in both packing density and structure order of the films due to the removal of organic segments, material crystallization, and phase transformation. The optical bandgap is found to decrease from 5.63 to 4.97 eV over the entire temperature range, suggesting an increasing nonlinear absorption in the case of high-power laser irradiation. Moreover, annealing completely destroys the network structure of the xerogel films that is suspected to facilitate the energy relaxation. Thus, the combined effect of the greatly weakened endurance and possible enhanced absorption to irradiation laser leads to a monotonous decrease of the laser-induced damage threshold from 55 to 10 J/cm2 (at 1053 nm, 10 ns pulse duration, and R/1 testing mode)

  6. Annealing effect on the optical properties and laser-induced damage resistance of solgel-derived ZrO2 films

    Science.gov (United States)

    Liang, Liping; Xu, Yao; Zhang, Lei; Sheng, Yonggang; Wu, Dong; Sun, Yuhan

    2007-05-01

    By modifying some structural characteristics, the annealing process can have considerable effects on the optical performance of the solgel-derived ZrO2 xerogel films. Annealing at increasing temperature from 150°Cto750°C gives rise to first an increase of refractive index from 1.63 (at 633 nm) to 1.93 and then a decrease to 1.86 with the watershed temperature of 550°C. This can be associated with the evolutions in both packing density and structure order of the films due to the removal of organic segments, material crystallization, and phase transformation. The optical bandgap is found to decrease from 5.63to4.97 eV over the entire temperature range, suggesting an increasing nonlinear absorption in the case of high-power laser irradiation. Moreover, annealing completely destroys the network structure of the xerogel films that is suspected to facilitate the energy relaxation. Thus, the combined effect of the greatly weakened endurance and possible enhanced absorption to irradiation laser leads to a monotonous decrease of the laser-induced damage threshold from 55to10 J/cm2 (at 1053 nm, 10 ns pulse duration, and R/1 testing mode).

  7. Carrier-induced ferromagnetism in bulk phosphorus-doped Zn1-xMnxTe achieved by annealing under high pressure

    International Nuclear Information System (INIS)

    We report the observation of carrier-induced ferromagnetism in bulk phosphorus-doped Zn1-xMnxTe. Using high-pressure Bridgman growth and with post-growth high-pressure annealing, we were able to overcome self-compensation in this material, thus achieving unprecedented concentrations of electrically active acceptors. Magnetic susceptibility and magnetic circular dichroism measurements on samples prepared in this way clearly reveal ferromagnetic ordering of the Mn ions. For example, Zn0.97Mn0.03Te:P with hole concentration of p = 4.8 x 1018 cm-3 showed a Curie temperature TC 2.5 K. (authors)

  8. The environment-induced cracking of as-annealed Ni3(Si,Ti) and Ni3(Si,Ti) with 2Mo in sodium chloride solutions

    OpenAIRE

    Priyotomo, Gadang; Wagle, Sanat; Okitsu, Kenji; Iwase, Akihiro; Kaneno, Yasuyuki; Nishimura, Rokuro; Takasugi, Takayuki

    2015-01-01

    Background The environment-induced cracking (EIC) of as-annealed Ni3(Si,Ti) and Ni3(Si,Ti) with 2Mo has been researched as functions of applied stress, chloride ion concentration, test temperature, and pH. Methods The investigation of EIC was carried out by applying a constant method in NaCl solutions. Results The EIC susceptibility of both intermetallic compounds increased with increasing test temperature and Cl− ion concentration and increased with decreasing pH. The fra...

  9. In situ observation of the generation and annealing kinetics of E ' centres induced in amorphous SiO2 by 4.7 eV laser irradiation

    International Nuclear Information System (INIS)

    The kinetics of E ' centres induced in silica by 4.7 eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure, the defects decay due to reaction with diffusing molecular hydrogen of radiolytic origin. Hydrogen-related annealing is also active during exposure and competes with the photo-induced generation of the centres until a saturation is reached. The concentrations of E ' and H2 at saturation are proportional, so indicating that the UV-induced generation processes of the two species are correlated. These results are consistent with a model in which E ' and hydrogen are generated from a common precursor Si-H

  10. Transformations of PTCDA structures on rutile TiO2 induced by thermal annealing and intermolecular forces

    OpenAIRE

    Szymon Godlewski; Prauzner-Bechcicki, Jakub S.; Thilo Glatzel; Ernst Meyer; Marek Szymoński

    2015-01-01

    Transformations of molecular structures formed by perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules on a rutile TiO2(110) surface are studied with low-temperature scanning tunnelling microscopy. We demonstrate that metastable molecular assemblies transform into differently ordered structures either due to additional energy provided by thermal annealing or when the influence of intermolecular forces is increased by the enlarged amount of deposited molecules. Proper adjustment of ...

  11. Ion-implantation/annealing-induced precipitation of nanophase ferromagnetic particles in yttrium-stabilized ZrO2

    International Nuclear Information System (INIS)

    Ion implantation and thermal processing techniques have been used to form embedded ferromagnetic nanophase precipitates and thereby create magneto-optically active near-surface regions on otherwise inactive materials. Ferromagnetic precipitates were formed by first implanting Fe+ or Ni+ into Y0.15Zr0.85O1.93 (YSZ) with an implant energy of 140 keV, a fluence of 8.0 x 1016 ions/cm2, and at a temperature of -189 C. After implantation, the specimens were annealed at temperatures ranging from 500 to 1100 C in several types of reducing atmospheres. X-ray diffraction and TEM analysis of the Fe- or Ni-implanted/annealed specimens revealed that crystallographically coherent precipitates of metallic α-Fe, magnetite (Fe3O4), or Ni could be formed in YSZ depending on the annealing conditions. In particular, the cooling rate was established as the critical factor that determined whether Fe or Fe3O4 precipitates were created. Magneto-optical effects arising from ferromagnetic precipitates of Fe, Fe3O4, and Ni in the near-surface region of YSZ were observed and characterized using magnetic circular dichroism (MCD). The magneto-optical response of the α-Fe, Fe3O4, and Ni precipitates was markedly different as indicated by the MCD-detected hysteresis curves. The precipitation mechanism, the chemical nature of the precipitates, and the particle-size distributions resulting from different annealing conditions were investigated and correlated with the precipitate magneto-optical properties

  12. Study of the Induced Anisotropy in Field Annealed Hitperm Alloys by Mössbauer Spectroscopy and Kerr Microscopy

    Science.gov (United States)

    Blázquez, J. S.; Marcin, J.; Andrejka, F.; Franco, V.; Conde, A.; Skorvanek, I.

    2016-08-01

    Samples of Fe39Co39Nb6B15Cu1 alloy were nanocrystallized under zero field annealing (ZF) and transverse field annealing (TF) conditions. A reduction in coercivity for TF samples with respect to ZF sample (16 and 45 A/m, respectively) is observed. Kerr microscopy images show a well-defined parallel domain structure, transversally oriented to the ribbon axis for the TF sample unlike for the ZF sample, for which a complex pattern is observed with large and small domains at the surface of the ribbon. Although Mössbauer spectra are clearly different for the two studied samples, Mössbauer studies confirm that there is no significant difference between the hyperfine field distributions of TF and ZF samples but only the relative intensity of the 2nd and 3rd lines A 23 (related to the angle between the gamma radiation and the magnetic moments, α). However, for TF annealed samples α = 90 deg ( A 23 = 4), indicating that the magnetic moments lay on the plane of the ribbon in agreement with the well-defined domain structure observed by Kerr microscopy, ZF annealed samples show A 23 = 1.8. This value is close to that of a random orientation ( A 23 = 2) but smaller, indicating a slight preference for out of plane orientations. Moreover, it is clearly smaller than that of the as-cast amorphous samples A 23 = 2.8, with a preference to in-plane orientations. The application of the law of approach to saturation yields a larger effect of the inhomogeneities in ZF sample with respect to TF one.

  13. Developing Concepts of Ordinary and Extraordinary Communication

    Science.gov (United States)

    Lane, Jonathan D.; Evans, E. Margaret; Brink, Kimberly A.; Wellman, Henry M.

    2016-01-01

    We examine how understandings of ordinary and extraordinary communication develop. Three- to 10-year-old children and adults (N = 183) were given scenarios in which a protagonist wanted help from a human (their parent) or from God. Scenarios varied in whether protagonists expressed their desires aloud (by asking) or silently (by hoping), whether…

  14. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  15. Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    McCann, R. [NIBEC, School of Electrical and Mechanical Engineering, University of Ulster at Jordanstown, Newtownabbey, Co. Antrim, BT37 OQB, N. Ireland (United Kingdom); Roy, S.S. [NIBEC, School of Electrical and Mechanical Engineering, University of Ulster at Jordanstown, Newtownabbey, Co. Antrim, BT37 OQB, N. Ireland (United Kingdom)]. E-mail: s.sinha-roy@ulster.ac.uk; Papakonstantinou, P. [NIBEC, School of Electrical and Mechanical Engineering, University of Ulster at Jordanstown, Newtownabbey, Co. Antrim, BT37 OQB, N. Ireland (United Kingdom); Bain, M.F. [Queens University of Belfast, School of Elect and Elect Engineering, Belfast, Antrim, N. Ireland (United Kingdom); Gamble, H.S. [Queens University of Belfast, School of Elect and Elect Engineering, Belfast, Antrim, N. Ireland (United Kingdom); McLaughlin, J.A. [NIBEC, School of Electrical and Mechanical Engineering, University of Ulster at Jordanstown, Newtownabbey, Co. Antrim, BT37 OQB, N. Ireland (United Kingdom)

    2005-06-22

    Tetrahedral amorphous carbon (ta-C) and nitrogenated tetrahedral amorphous carbon films (ta-CN {sub x}), deposited by double bend off plane Filtered Vacuum Cathodic Arc were annealed up to 1000 deg. C in flowing argon for 2 min. Modifications on the chemical bonding structure of the rapidly annealed films, as a function of temperature, were investigated by NEXAFS, X-ray photoelectron and Raman spectroscopies. The interpretation of these spectra is discussed. The results demonstrate that the structure of undoped ta-C films prepared at floating potential with an arc current of 80 A remains stable up to 900 deg. C, whereas that of ta-CN {sub x} containing 12 at.% nitrogen is stable up to 700 deg. C. At higher temperatures, all the spectra indicated the predominant formation of graphitic carbon. Through NEXAFS studies, we clearly observed three {pi}* resonance peaks at the {sup '}N K edge structure. The origin of these three peaks is not well established in the literature. However our temperature-dependant study ascertained that the first peak originates from C=N bonds and the third peak originates from the incorporation of nitrogen into the graphite like domains.

  16. The ordinary and the extraordinary countertransference.

    Science.gov (United States)

    Freedman, Norbert; Lasky, Richard; Webster, Jamieson

    2009-04-01

    This is both a clinical and an epistemological inquiry into the concept of countertransference. A distinction is made between the ordinary countertransference, a transitory disruption residing within the analyst's consciousness, and the extraordinary countertransference, an impasse intolerable to the analyst to such an extent that it remains outside awareness. This distinction, rooted in the history of psychoanalytic thought, is here traced in a recorded psychoanalysis. The clinical material is examined from three perspectives, including empirical evaluation by computer-assisted monitoring of spoken language and two modes of psychoanalytic interpretive listening. Analytic sessions designated as ordinary were readily identified by quantitative measures. However, the threshold between the ordinary and the extraordinary countertransference was reached at the point where empirical observations broke down. Detailed psychoanalytic observation of the four sessions that lie beyond empirical validation led to a formulation of the analyst's state of consciousness during these pivotal hours. PMID:19516054

  17. Acoustic Fresnel lenses with extraordinary transmission

    OpenAIRE

    Molerón, Miguel; Serra-Garcia, Marc; Daraio, Chiara

    2014-01-01

    We investigate numerically and experimentally highly efficient acoustic lenses based on the principle of extraordinary acoustic transmission. We study circular, flat lenses composed of perforated air channels. The geometry is similar to binary Fresnel lenses, and the lenses exploit several resonance mechanisms to enhance the transmission, such as Fabry–Perot resonances in the channels and cavity resonances on the lens surface. The proposed lenses are able to transmit up to 83% of the incident...

  18. Neural and cognitive characteristics of extraordinary altruists

    Science.gov (United States)

    Marsh, Abigail A.; Stoycos, Sarah A.; Brethel-Haurwitz, Kristin M.; Robinson, Paul; VanMeter, John W.; Cardinale, Elise M.

    2014-01-01

    Altruistic behavior improves the welfare of another individual while reducing the altruist’s welfare. Humans’ tendency to engage in altruistic behaviors is unevenly distributed across the population, and individual variation in altruistic tendencies may be genetically mediated. Although neural endophenotypes of heightened or extreme antisocial behavior tendencies have been identified in, for example, studies of psychopaths, little is known about the neural mechanisms that support heightened or extreme prosocial or altruistic tendencies. In this study, we used structural and functional magnetic resonance imaging to assess a population of extraordinary altruists: altruistic kidney donors who volunteered to donate a kidney to a stranger. Such donations meet the most stringent definitions of altruism in that they represent an intentional behavior that incurs significant costs to the donor to benefit an anonymous, nonkin other. Functional imaging and behavioral tasks included face-emotion processing paradigms that reliably distinguish psychopathic individuals from controls. Here we show that extraordinary altruists can be distinguished from controls by their enhanced volume in right amygdala and enhanced responsiveness of this structure to fearful facial expressions, an effect that predicts superior perceptual sensitivity to these expressions. These results mirror the reduced amygdala volume and reduced responsiveness to fearful facial expressions observed in psychopathic individuals. Our results support the possibility of a neural basis for extraordinary altruism. We anticipate that these findings will expand the scope of research on biological mechanisms that promote altruistic behaviors to include neural mechanisms that support affective and social responsiveness. PMID:25225374

  19. Annealing induced coherent evolutions of biaxial strain and antiferromagnetic-insulator phase in La0.625Ca0.375MnO3 films

    Science.gov (United States)

    Han, Yunxin; Wu, Wenbin; Jiang, Guoshun; Zhu, Changfei

    2012-09-01

    La0.625Ca0.375MnO3 (LCMO) films with thicknesses between 7 and 54 nm were epitaxially grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) [LSAT (001)] substrates by using pulsed laser deposition. For this epitaxial system, antiferromagnetic-insulator (AFI) state can be controlled by changing the film thickness and annealing time with various epitaxial strain states, although this phenomenon is absent in the relatively thick films or bulk samples. The consistency between magnetization and resistivity data suggests all these interesting transport behaviors are attributed to the fluctuation of AFI volume fractions and their instability. Especially, there are huge low-field magnetoresistance over -54% (32 nm) at 0.1 T and enhanced magnetoresistance over a broad temperature range. Based on these above results, annealing induced coherent evolutions of biaxial strain and AFI phase in LCMO epitaxial films is a consequence of the strain-driven orbital ordered state, and this may make an approach for a possible application of strongly correlated electron devices.

  20. In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

    Science.gov (United States)

    Matsui, T.; Aikoh, K.; Sakamaki, M.; Amemiya, K.; Iwase, A.

    2015-12-01

    Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

  1. Transformations of PTCDA structures on rutile TiO2 induced by thermal annealing and intermolecular forces

    Directory of Open Access Journals (Sweden)

    Szymon Godlewski

    2015-07-01

    Full Text Available Transformations of molecular structures formed by perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA molecules on a rutile TiO2(110 surface are studied with low-temperature scanning tunnelling microscopy. We demonstrate that metastable molecular assemblies transform into differently ordered structures either due to additional energy provided by thermal annealing or when the influence of intermolecular forces is increased by the enlarged amount of deposited molecules. Proper adjustment of molecular coverage and substrate temperature during deposition allows for fabrication of desired assemblies. Differences between PTCDA/TiO2(110 and PTCDA/TiO2(011 systems obtained through identical experimental procedures are discussed.

  2. Transformations of PTCDA structures on rutile TiO2 induced by thermal annealing and intermolecular forces.

    Science.gov (United States)

    Godlewski, Szymon; Prauzner-Bechcicki, Jakub S; Glatzel, Thilo; Meyer, Ernst; Szymoński, Marek

    2015-01-01

    Transformations of molecular structures formed by perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules on a rutile TiO2(110) surface are studied with low-temperature scanning tunnelling microscopy. We demonstrate that metastable molecular assemblies transform into differently ordered structures either due to additional energy provided by thermal annealing or when the influence of intermolecular forces is increased by the enlarged amount of deposited molecules. Proper adjustment of molecular coverage and substrate temperature during deposition allows for fabrication of desired assemblies. Differences between PTCDA/TiO2(110) and PTCDA/TiO2(011) systems obtained through identical experimental procedures are discussed. PMID:26199854

  3. Anneal-induced enhancement of refractive index and hardness of silicophosphate glasses containing six-fold coordinated silicon

    International Nuclear Information System (INIS)

    A considerable number of optical devices have significantly benefited from the development of phosphate glasses as substrate materials. Introducing silica into sodium phosphate is an effective method to enhance its mechanical and optical properties. Through annealing treatment, the tetrahedral silicon oxide network structure (Si(4)) can be transformed into an octahedral structure (Si(6)) with more constraints. Here, we use high-temperature Raman and Nuclear Magnetic Resonance to reveal the mechanism of transformation between the Si(4) and Si(6) silicon oxide structures. The increase of the Si(6) content results in the phosphate glasses having higher refractive index and hardness. Based on this, the refractive index contribution of SiO6 is obtained

  4. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    International Nuclear Information System (INIS)

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects

  5. Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Takimoto, Takuma, E-mail: takimoto-takuma@ed.tmu.ac.jp; Takeshita, Koji; Nakamura, Seiji; Okumura, Tsugunori

    2014-04-30

    We investigated the electrical characteristics of an AlGaN/GaN heterostructure exposed to Ar plasma. In the near-surface region of the AlGaN/GaN heterostructure, we found that plasma-induced defects reduced the two-dimensional electron gas (2DEG) density and mobility at the AlGaN/GaN interface with increasing exposure time. The decrease in 2DEG density suggests that plasma-induced disordering partly extinguishes the piezo-polarization of the AlGaN layer, that the effective Schottky barrier height is increased by the introduction of negatively changed defects, or that the negatively charged defects induced during plasma exposure deactivate or compensate Si donors. In addition, we investigated the postannealing behavior of plasma-induced defects in the AlGaN/GaN heterostructure as well as in the n-GaN layer under an applied bias voltage. - Highlights: • We have investigated the electrical characteristics of the AlGaN/GaN heterostructure. • Electrons under the AlGaN/GaN interface are decreased by plasma exposure. • Post-annealing treatment with gate bias recovers the degradation caused by defects.

  6. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    Science.gov (United States)

    Prasad, Neetu; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C.; Bhatia, C. S.

    2014-09-01

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ˜1.2 × 107 A/cm2 has been obtained for SLG (1 × 2.5 μm2) on SiO2/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  7. Extraordinary acoustic transmission through annuluses in air and its applications in acoustic beam splitter and concentrator.

    Science.gov (United States)

    Ge, Yong; Sun, Hong-Xiang; Liu, Shu-Sen; Yuan, Shou-Qi; Xia, Jian-Ping; Guan, Yi-Jun; Zhang, Shu-Yi

    2016-08-01

    We report an extraordinary acoustic transmission through two layer annuluses made of metal cylinders in air both numerically and experimentally. The effect arises from the enhancement and reconstruction of the incident source induced by different Mie-resonance modes of the annuluses. The proposed system takes advantages of the consistency in the waveform between the input and output waves, the high amplitude amplification of output waves, and the easy adjustment of structure. More interestingly, we investigate the applications of the extraordinary acoustic transmission in the acoustic beam splitter and acoustic concentrator. Our finding should have an impact on ultrasonic applications. PMID:27587144

  8. Anomalous attenuation of extraordinary waves in ionosphere heating experiments experimental results of 2000-2001

    CERN Document Server

    Zabotin, N A; Kovalenko, E S; Frolov, V L; Komrakov, G P; Mityakov, N A; Sergeev, E N

    2001-01-01

    Multiple scattering from artificial random irregularities HF-induced in the ionosphere F region causes significant attenuation of both ordinary and extraordinary radio waves together with the conventional anomalous absorption of ordinary waves due to their conversion into the plasma waves. To study in detail features of this effect, purposeful measurements of the attenuation of weak probing waves of the extraordinary polarization have been performed at the Sura heating facility. Characteristic scale lengths of the involved irregularities are ~0.1-1 km across the geomagnetic field lines. To determine the spectral characteristics of these irregularities from the extraordinary probing wave attenuation measurements, a simple procedure of the inverse problem solving has been implemented and some conclusions about the artificial irregularity features have been drawn. Theory and details of experiments have been stated earlier. This paper reports results of two experimental campaigns carried out in August 2000 and Ju...

  9. Extraordinary terahertz transmission through a copper film perforated with circular and rectangular apertures

    Science.gov (United States)

    Hu, Dan; Chen, Bing

    2015-11-01

    The extraordinary transmission (ET) due to localized surface plasmon (LSP) and propagating surface plasmon (PSP) resonances of terahertz wave through a copper film perforated with circular and rectangular apertures is investigated theoretically and experimentally. Considering that the field distributions of LSP and PSP resonances are determined by the shape and periods of the apertures on the film, the relations between extraordinary and the geometrical parameters of the apertures are investigated. The intensities of the ETs induced by the PSP resonances mode [1, 1] are much stronger than the fundamental ones [1, 0] and [0, 1]. Our finds provide another effective method to tailor the extraordinary THz transmission in sub-wavelength metallic aperture structures.

  10. Magnetoimpedance response in current annealed amorphous wires

    International Nuclear Information System (INIS)

    In this work, the magnetoimpedance (MI) effect in amorphous wires submitted to current annealing treatment in vacuum is presented. The influence of circular anisotropy and stress relaxation induced during the annealing on the impedance dependence on external magnetic field is shown. An increase in the MI ratio for the annealed wires is observed up to a maximum value which is approximately three times higher than the maximum value obtained for the as-cast wire. For high enough times of current annealing treatment a decrease in the MI ratio is observed due to the formation of crystalline phase

  11. Magnetoimpedance response in current annealed amorphous wires

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, D. [Dpto. Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain)]. E-mail: danielgg@usal.es; Raposo, V. [Dpto. Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Borza, F. [Wolfson Centre for Magnetics Technology, Cardiff University, New Port Road, P.O. Box 925, CF24 0YF Cardiff (United Kingdom); Montero, O. [Dpto. Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain); Iniguez, J. [Dpto. Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca (Spain)

    2006-09-15

    In this work, the magnetoimpedance (MI) effect in amorphous wires submitted to current annealing treatment in vacuum is presented. The influence of circular anisotropy and stress relaxation induced during the annealing on the impedance dependence on external magnetic field is shown. An increase in the MI ratio for the annealed wires is observed up to a maximum value which is approximately three times higher than the maximum value obtained for the as-cast wire. For high enough times of current annealing treatment a decrease in the MI ratio is observed due to the formation of crystalline phase.

  12. Extraordinary transmission technique for microwave antenna applications

    Science.gov (United States)

    Sarin, V. P.; Jayakrishnan, M. P.; Aanandan, C. K.; Mohanan, P.; Vasudevan, K.

    2016-05-01

    The extraordinary optical transmission (EOT) through an array of holes in a metal plate has been a constant source of inspiration for researchers for over a decade (Ebbesen et al 1998 Nature 391 667–9). In this paper, an EOT analogue is proposed in the microwave frequency range for enhancing the radiation performance of a stacked dipole antenna. It is observed that the back radiated power of the antenna is considerably reduced and the reason behind transmission enhancement is the excitation of Fabry–Pérot resonant modes on the slit loaded aperture. Computational analysis based on finite difference time domain is performed for identifying the true reason behind resonant transmission enhancement.

  13. Investigation of morphological changes of SrTiO3 surfaces induced by annealing and ion bombardment

    International Nuclear Information System (INIS)

    Strontium titanate is a promising oxide semiconductor in which oxygen vacancies act as intrinsic donors. In order to produce n-doped layers, several approaches to modify the crystal surface are possible. Different methods of vacuum annealing and ion implantation are commonly used. Here, we use atomic force microscopy to study SrTiO3 single crystal surfaces that were modified according to these known methods to investigate whether the surface structure is changed during the process and if the electrical properties correlate with these changes. Based on the morphology of the untreated surface, which shows a terrace structure with step heights equal to the dimensions of the cubic SrTiO3 unit cell, the exposure to heat leads to a formation of 'bubble-like' structures and possibly even local melting and recrystallization. The kind of restructuring strongly depends on temperature and exposure time. The implantation of different ions (i.e. of Ar, O and H) is found to have a comparatively weaker impact on the surface morphology.

  14. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Science.gov (United States)

    Ceylan, Abdullah; Ozcan, Yusuf; Orujalipoor, Ilghar; Huang, Yen-Chih; Jeng, U.-Ser; Ide, Semra

    2016-06-01

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  15. Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

    Science.gov (United States)

    Park, Jung Jin; Na, Suok-Min; Raghunath, Ganesh; Flatau, Alison B.

    2016-05-01

    Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011) grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat = λ∥ - λ⊥) of ˜280 ppm and ˜130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA). Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ˜60% to within ˜80% of λsat). The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ˜46% to ˜56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing/energy harvesting

  16. Preferential growth transformation of Bi0.5Sb1.5Te3 films induced by facile post-annealing process: Enhanced thermoelectric performance with layered structure

    International Nuclear Information System (INIS)

    Preferential growth transformation from (015) plane to (00l) plane of the bismuth antimony tellurium (Bi0.5Sb1.5Te3) film has been achieved through a facile post-annealing process with enhanced thermoelectric performance. The Bi0.5Sb1.5Te3 film with preferential growth of (015) crystal plane was obtained via dc magnetron sputtering, and the Stranski–Krastanov model has been used to explain its growth mechanism. Preferential growth transformation from (015) plane to (00l) plane occurred after a post-annealing process. The driving force of this phenomenon is the natural tendency to reduce the total interfacial energy of the system, and the migration and coalescence of atoms along the in-plane direction form the layered structure. Moreover, the carrier concentration of Bi0.5Sb1.5Te3 films is optimized to ∼019/cm3 in the film with preferential growth of (00l) plan. Hence, a synchronous increase of electrical conductivity and Seebeck coefficient is obtained due to the greatly enhanced carrier mobility and optimized carrier concentration. Therefore, the Bi0.5Sb1.5Te3 film with the preferential growth of (00l) plane possesses power factor of 48.2 μW/cm K2 which is three times higher than that of the film with the preferential growth of (015) plane. Our study has provided a facile strategy to induce preferential growth transformation in Bi0.5Sb1.5Te3 films and meanwhile largely enhanced the thermoelectric performance. - Highlights: • Preferential growth transformation is obtained by a facile post-annealing process. • Preferential growth and transformation mechanisms have been discussed. • Electrical conductivity and Seebeck coefficient are enhanced synchronously. • The largest power factor of 48.2 μW/cm K2 in Bi0.5Sb1.5Te3 films is achieved. • Our study provides an effective way to improve the thermoelectric performance

  17. Stress-anneal-induced magnetic anisotropy in highly textured Fe-Ga and Fe-Al magnetostrictive strips for bending-mode vibrational energy harvesters

    Directory of Open Access Journals (Sweden)

    Jung Jin Park

    2016-05-01

    Full Text Available Magnetostrictive Fe-Ga and Fe-Al alloys are promising materials for use in bending-mode vibrational energy harvesters. For this study, 50.8 mm × 5.0 mm × 0.5 mm strips of Fe-Ga and Fe-Al were cut from 0.50-mm thick rolled sheet. An atmospheric anneal was used to develop a Goss texture through an abnormal grain growth process. The anneal lead to large (011 grains that covered over 90% of sample surface area. The resulting highly-textured Fe-Ga and Fe-Al strips exhibited saturation magnetostriction values (λsat =  λ∥ − λ⊥ of ∼280 ppm and ∼130 ppm, respectively. To maximize 90° rotation of magnetic moments during bending of the strips, we employed compressive stress annealing (SA. Samples were heated to 500°C, and a 100-150 MPa compressive stress was applied while at 500°C for 30 minutes and while being cooled. The effectiveness of the SA on magnetic moment rotation was inferred by comparing post-SA magnetostriction with the maximum possible yield of rotated magnetic moments, which is achieved when λ∥ = λsat and λ⊥ = 0. The uniformity of the SA along the sample length and the impact of the SA on sensing/energy harvesting performance were then assessed by comparing pre- and post-SA bending-stress-induced changes in magnetization at five different locations along the samples. The SA process with a 150 MPa compressive load improved Fe-Ga actuation along the sample length from 170 to 225 ppm (from ∼60% to within ∼80% of λsat. The corresponding sensing/energy harvesting performance improved by as much as a factor of eight in the best sample, however the improvement was not at all uniform along the sample length. The SA process with a 100 MPa compressive load improved Fe-Al actuation along the sample length from 60 to 73 ppm (from ∼46% to ∼56% of λsat, indicating only a marginally effective SA and suggesting the need for modification of the SA protocol. In spite of this, the SA was effective at improving the sensing

  18. Effects of implantation temperature and thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in a-SiC:H

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T., E-mail: tania_tsvetkova@yahoo.co.uk [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Wright, C.D. [University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Kitova, S. [Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 109 Acad. G. Bontchev St., 1113 Sofia (Bulgaria); Bischoff, L. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314 Dresden (Germany); Zuk, J. [Institute of Physics, Maria Curie-Sklodovska University, Pl. M.Curie-Sklodovskiej 1, 20-031 Lublin (Poland)

    2013-07-15

    The effects of implantation temperature and post-implantation thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in hydrogenated silicon–carbon alloy films have been studied. As a result of the implantation a well-expressed “darkening” effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5–3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga{sup +}-focused ion beam. Possible applications of this effect in the area of submicron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga{sup +} liquid metal ion sources. The fact that Ga has a very low melting point (T{sub m} = 29.8 °C) and an unusual feature of volume contraction on melting are factors which favour Ga incorporation upon ion-implantation as dispersed clusters, or small nanoparticles. It has been previously noted that Ga precipitation into nanoparticles can vary dramatically (in terms of particle size) with Ga concentration and small changes in surface implant temperature, thus affecting the optical properties of the target. The precise role of implantation temperature effects, i.e. the target temperature during Ga{sup +} ion irradiation, on the optical contrast obtainable, has been therefore a key part of this study. Appropriate post-implantation annealing treatments were also studied, since these are expected to offer further benefits in reducing the required ion dose and enhancing contrast, thus increasing the cost-effectiveness of the bit-writing method.

  19. Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1 Ti0.9 O2-δ Films Prepared by Sol-Gel Method

    Institute of Scientific and Technical Information of China (English)

    LIU Li-Feng; KANG Jin-Feng; WANG Yi; ZHANG Xing; HAN Ru-Qi

    2008-01-01

    The Co-doped TiO,2 films (Co,0.1 Ti,0.9 O,2-δ) are prepared on silicon substrates by sol-gel method and post annealing. The Co,0.1 Ti,0.9 O,2-δ film annealed in air is non-ferromagnetic at room temperature. After further annealed in a vacuum, the room-temperature ferromagnetism (RTFM) is observed. Experimental evidences show that the RTFM in the Co,0.1 Ti,0.9 O,2-δ film may come from the Co-doped TiO,2 matrix and is related to the oxygen vacancies created by vacuum annealing.

  20. Quantum Annealing for Clustering

    OpenAIRE

    Kurihara, Kenichi; Tanaka, Shu; Miyashita, Seiji

    2014-01-01

    This paper studies quantum annealing (QA) for clustering, which can be seen as an extension of simulated annealing (SA). We derive a QA algorithm for clustering and propose an annealing schedule, which is crucial in practice. Experiments show the proposed QA algorithm finds better clustering assignments than SA. Furthermore, QA is as easy as SA to implement.

  1. Taking the Extra out of the Extraordinary

    DEFF Research Database (Denmark)

    Jerslev, Anne; Mortensen, Mette

    2014-01-01

    people engaged in insignificant everyday activities hold by far the largest share of today’s insatiable digital, globalized and commercialized market for news pictures of celebrities off-duty. Re-examining the well-known theorization of the tension between the ordinary and extraordinary in celebrity......Paparazzi photography presently constitutes the largest genre of visual celebrity news on the internet along with red carpet photography. With the emergence of digital media, this genre has moved towards the centre of mainstream news and entertainment culture, and the content has undergone a...... significant transformation. Trademark paparazzi photographs used to be depictions of celebrities deviating from prevailing norms of proper conduct by exhibiting bodily excess and/or transgressing social or moral codes. By contrast, a content analysis conducted for this article shows that snapshots of famous...

  2. Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

    Science.gov (United States)

    Lee, H. S.; Yamaguchi, M.; Elkins-Daukes, N. J.; Khan, A.; Takamoto, T.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2007-01-01

    A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

  3. Effect of high temperature annealing on non-thermal equilibrium phases induced by energetic ion irradiation in FeRh and Ni3V intermetallic compounds

    International Nuclear Information System (INIS)

    FeRh and Ni3V intermetallic compounds were irradiated with 16 MeV Au5+ ions and were subsequently annealed at elevated temperatures from 100 to 500°C. The non-thermal equilibrium A1 and L10 phases of FeRh, which were caused by the ion irradiation, disappeared by 300°C–100 min annealing. The non-thermal equilibrium A1 phase of Ni3V caused by the ion irradiation disappeared by 500°C–100 min annealing. The Vickers hardness for these two intermetallic compounds changes during the thermal annealing in a direction opposite to its change by the irradiation. The present experimental result shows that the combination of energetic ion irradiation and subsequent thermal annealing can be used as a useful tool for the modification of the mechanical properties of FeRh and Ni3V intermetallic compounds. (author)

  4. Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys

    Indian Academy of Sciences (India)

    Svetlana Nestorovic

    2005-08-01

    This paper reports results of investigation carried out on sintered copper alloys (Cu, 8 at%; Zn, Ni, Al and Cu–Au with 4 at%Au). The alloys were subjected to cold rolling (30, 50 and 70%) and annealed isochronally up to recrystallization temperature. Changes in hardness and electrical conductivity were followed in order to investigate the anneal hardening effect. This effect was observed after secondary annealing also. Au and Al have been found to be more effective in inducing anneal hardening effect.

  5. 22 CFR 41.55 - Aliens with extraordinary ability.

    Science.gov (United States)

    2010-04-01

    ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens with extraordinary ability. 41.55... IMMIGRATION AND NATIONALITY ACT, AS AMENDED Business and Media Visas § 41.55 Aliens with extraordinary ability. (a) Requirements for O classification. An alien shall be classifiable under the provisions of INA...

  6. 47 CFR 36.224 - Extraordinary items-Account 7600.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Extraordinary items-Account 7600. 36.224... Income Accounts Certain Income Accounts § 36.224 Extraordinary items—Account 7600. (a) Amounts in this account of an operating nature are apportioned on a basis consistent with the nature of these items....

  7. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, Neetu, E-mail: neetu.prasad@south.du.ac.in, E-mail: neetu23686@gmail.com; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021 (India); Bhatia, C. S. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-09-15

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 10{sup 7 }A/cm{sup 2} has been obtained for SLG (1 × 2.5 μm{sup 2}) on SiO{sub 2}/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  8. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    International Nuclear Information System (INIS)

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ∼1.2 × 107 A/cm2 has been obtained for SLG (1 × 2.5 μm2) on SiO2/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  9. Biological Applications of Extraordinary Electroconductance (EEC)

    Science.gov (United States)

    Tran, L. C.; Werner, F. M.; Solin, S. A.

    2014-03-01

    Rapid detection of biomolecular concentration is a fundamental goal for lab on a chip diagnostic systems. The Extraordinary Electroconductance (EEC) sensor, a stacked, AuTi-GaAs metal semiconductor hybrid structure (MSH), has been previously demonstrated to have an electric field sensitivity of 3.05V/cm in a mesoscopic-scale structure fabricated at the center of a parallel plate capacitor. In this work, we demonstrate the first successful application of EEC sensors as electrochemical detectors of molecular binding to the sensor surface. The negatively charged avidin derivative, captavidin, was applied with varying captavidin concentrations in phosphate buffered saline (PBS). The four-point measured resistance of bare EEC sensors was shown to increase by a factor of four due to captavidin binding at the sensor surface, as compared to a baseline binding assay in which the captavidin binding sites were blocked. Calculations for approximate electric field strengths introduced by a bound captavidin molecule will also presented. EEC sensors' four point measurements showed robustness and stability in spite of variations in the functional, linking layer. S.A.S. is a co-founder of and has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

  10. An Extraordinary Year for Managing Technology

    Science.gov (United States)

    Dumbacher, Daniel L.

    2006-01-01

    It's wonderful to be back home again in Indiana. I am honored to be here with you today to share two important results of effective technology management. The first is the indirect return on investment that Americans get from NASA's relatively lean annual budget, and the second is the direct economic benefits that the great state of Indiana and businesses nationwide realize through multiple contracts with NASA. As a proud Purdue graduate and deputy director of one of NASA's highest-priority, multi-billion dollar projects, I have a vested interest in this conference and in the outcome of this work. My goal today is to help you better understand the types of work in which NASA engages and to provide avenues for you to pursue opportunities with America's space Agency, if that is a good fit for your company. You may already know that NASA and various Indiana businesses and universities are partners in the pursuit of improving life on Earth through scientific discoveries that pay dividends in terms of expanded knowledge, as well as big-picture conveniences and a multitude of spin-offs. Whether your organization is large or small, NASA offers numerous opportunities to participate. Before I provide some motivating facts and figures about the aerospace industry and its economic impact, I want to set the stage by sharing several notable examples of how 2005 was an extraordinary year for technology management at NASA, a subject that I can speak about firsthand.

  11. Generalized Simulated Annealing

    OpenAIRE

    Tsallis, Constantino; Stariolo, Daniel A.

    1995-01-01

    We propose a new stochastic algorithm (generalized simulated annealing) for computationally finding the global minimum of a given (not necessarily convex) energy/cost function defined in a continuous D-dimensional space. This algorithm recovers, as particular cases, the so called classical ("Boltzmann machine") and fast ("Cauchy machine") simulated annealings, and can be quicker than both. Key-words: simulated annealing; nonconvex optimization; gradient descent; generalized statistical mechan...

  12. Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectors

    International Nuclear Information System (INIS)

    A model based on various single levels with different charge states (acceptors, donors, neutral, etc.) created by neutron radiation is proposed to describe the changes of effective doping density in the space charge region Neff(SCR) and resistivity in the electrical neutral bulk ρ (ENB). This model explains well the effects of donor removal at low fluences, Neff(SCR) increase with n-fluence (Φn) at high fluence (''type-inversion'' in SCR), and the increase of resistivity in the ENB with Φn. The annealing of each single level with charged state is modeled by an activation energy Ea which gives the dependence of annealing time constant τ on the annealing temperature. The model describes well the observed effect of RT reverse anneal of Neff(SCR), which is probably caused by the difference of annealing time constants of a donor level (long τ) and an acceptor level (short τ). The model also predicts that there is an annealing temperature window, which is about 0 C, that would freeze the Neff(SCR) at the ''minimum'' value for a few years before the reverse anneal. A -20 C anneal, however, would freeze Neff(SCR) at the as-irradiated value, which is about 1.5-3 times higher than the ''minimum value''. The model also suggests that low resistivity (200 Ω cm to 1 kΩ cm) starting material may be harder in terms of Neff(SCR) for detectors to be within a working window of vertical stroke Neff(SCR)vertical stroke 12/cm3(Vfd=180 V, 300 μm) after about 1x1014 n/cm2 neutron radiation. (orig.)

  13. Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films

    Science.gov (United States)

    Batra, Vaishali; Ramana, C. V.; Kotru, Sushma

    2016-08-01

    We report the effect of post deposition annealing temperature (Ta = 550 and 750 °C) on the surface morphology, chemical bonding and structural development of lanthanum doped lead zirconate titanate (Pb0.95La0.05Zr0.54Ti0.46O3; referred to PLZT) thin films prepared using chemical solution deposition method. Atomic force microscopy demonstrates formation of nanocrystallites in the film annealed at Ta = 750 °C. X-ray photoelectron spectroscopy (XPS) analyses indicate that the binding energies (BE) of the Pb 4f, Zr 3d, and Ti 2p doublet experience a positive energy shift at Ta = 750 °C, whereas the BE of O 1s and La 3d doublet show a negative shift with respect to the BE of the films annealed at Ta = 750 °C. Thermal induced crystallization and chemical modification is evident from XPS results. The Ar+ sputtering of the films reveals change in oxidation state and chemical bonding between the constituent atoms, with respect to Ta. Raman spectroscopy used to study phonon-light interactions show shift in longitudinal and transverse optical modes with the change in Ta, confirming the change in phase and crystallinity of these films. The results suggest annealing at Ta = 750 °C yield crystalline perovskite PLZT films, which is essential to obtain photovoltaic response from devices based on such films.

  14. Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

    International Nuclear Information System (INIS)

    Highlights: • The electrical properties of GZO/CuSx contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using CuxS interlayers under different annealing temperatures. It is shown that the GZO/CuxS contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10−2 Ω cm2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/CuxS/p-GaN and CuxS/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

  15. Irradiation embrittlement and optimisation of annealing

    International Nuclear Information System (INIS)

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

  16. The control of the film stress of Cat-CVD a-Si films and its impact on explosive crystallization induced by flash lamp annealing

    International Nuclear Information System (INIS)

    Catalytic chemical vapor deposition (Cat-CVD) can produce amorphous silicon (a-Si) films with low film stress, in general, compared to plasma-enhanced CVD, and is thus suited for the preparation of precursor a-Si films for thick poly-Si films applied for solar cells. The stress of a-Si films is known to sometimes play an important role for the crystallization of a-Si films and resulting grain size of polycrystalline Si (poly-Si) films formed. I investigate the impact of the stress of Cat-CVD a-Si films on the mechanism of explosive crystallization (EC) induced by flash lamp annealing (FLA). The stress of Cat-CVD a-Si films can be controlled by changing the temperatures of substrates and/or a catalyzing wire during film deposition. Cat-CVD a-Si films with tensile stress (~ 200 MPa) can be deposited as well as films with compressive stress. The enlargement of grain size is observed in a part of flash-lamp-crystallized (FLC) poly-Si films formed from Cat-CVD films with tensile stress compared to those with compressive stress, which might be an indication of a certain degree of impact of film stress on poly-Si formation. The grain size is, however, much smaller than that of FLC poly-Si films formed from electron-beam- (EB-) evaporated a-Si films with similar tensile stress. This fact may indicate the existence of other critical determinants of EC mechanism

  17. Multivariable Optimization: Quantum Annealing & Computation

    OpenAIRE

    Mukherjee, Sudip; Chakrabarti, Bikas K.

    2014-01-01

    Recent developments in quantum annealing techniques have been indicating potential advantage of quantum annealing for solving NP-hard optimization problems. In this article we briefly indicate and discuss the beneficial features of quantum annealing techniques and compare them with those of simulated annealing techniques. We then briefly discuss the quantum annealing studies of some model spin glass and kinetically constrained systems.

  18. History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

    Science.gov (United States)

    Koops, Hans W. P.

    2015-12-01

    The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

  19. Extraordinary diffusion in Co/Cu grain boundaries

    International Nuclear Information System (INIS)

    Usually, Cu atoms hardly diffuse in Co because of the very low solid solubility limit. However, this letter shows by transmission electron microscopy that extraordinary diffusion of Cu in the Co phase occurred in Co/Cu bicrystal fabricated by diffusion joining and that many dislocations were found in the Co phase. First-principles calculations suggested that the extraordinary diffusion of Cu in Co is related to the movement of dislocations which Cu atoms adhere to

  20. Some Advances in the Circuit Modeling of Extraordinary Optical Transmission

    OpenAIRE

    Medina, F.; Mesa, F; Rodriguez-Berral, R.

    2009-01-01

    The phenomenon of extraordinary optical transmission (EOT) through electrically small holes perforated on opaque metal screens has been a hot topic in the optics community for more than one decade. This experimentally observed frequency-selective enhanced transmission of electromagnetic power through holes, for which classical Bethe's theory predicts very poor transmission, later attracted the attention of engineers working on microwave engineering or applied electromagnetics. Extraordinary t...

  1. Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

    Energy Technology Data Exchange (ETDEWEB)

    David, C., E-mail: Clement.david@univ-poitiers.fr [Inventux Technologies AG, Wolfener Straße 23, 12681 Berlin (Germany); Institut Pprime, Département de Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, F-86962 Futuroscope Chasseneuil Cedex (France); Paumier, F. [Institut Pprime, Département de Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, F-86962 Futuroscope Chasseneuil Cedex (France); Tinkham, B.P. [Inventux Technologies AG, Wolfener Straße 23, 12681 Berlin (Germany); Eyidi, D.; Marteau, M.; Guérin, P.; Girardeau, T. [Institut Pprime, Département de Physique et Mécanique des Matériaux, CNRS – Université de Poitiers, F-86962 Futuroscope Chasseneuil Cedex (France)

    2013-05-15

    In this study temperature dependent Hall effect measurements combined with Fourier Transformed Infra-Red (FTIR) spectroscopy measurements is used to determine the evolution of the scattering mechanisms ascribable to in-grain and grain boundaries on Boron doped ZnO thin films deposited by Low Pressure Chemical Vapour Deposition (LPCVD). Through Hall effect measurements during in situ isothermal annealing, changes in electrical characteristics of zinc oxide could be followed in real time. Whereas only degradation is observed in air, an improvement of layer conductivity could be achieved at low temperatures by annealing under argon atmosphere. A study of the conductivity during isothermal annealing offers the possibility to extract activation energies, which have been compared to migration energies of the different intrinsic defects in ZnO.

  2. Modification of electrical properties induced by annealing of ZnO:B thin films deposited by chemical vapour deposition: Kinetic investigation of evolution

    International Nuclear Information System (INIS)

    In this study temperature dependent Hall effect measurements combined with Fourier Transformed Infra-Red (FTIR) spectroscopy measurements is used to determine the evolution of the scattering mechanisms ascribable to in-grain and grain boundaries on Boron doped ZnO thin films deposited by Low Pressure Chemical Vapour Deposition (LPCVD). Through Hall effect measurements during in situ isothermal annealing, changes in electrical characteristics of zinc oxide could be followed in real time. Whereas only degradation is observed in air, an improvement of layer conductivity could be achieved at low temperatures by annealing under argon atmosphere. A study of the conductivity during isothermal annealing offers the possibility to extract activation energies, which have been compared to migration energies of the different intrinsic defects in ZnO

  3. Photo-induced properties of non-annealed anatase TiO2 mesoporous film prepared by anodizing in the hot phosphate/glycerol electrolyte

    International Nuclear Information System (INIS)

    Highlights: ► The TiO2 mesoporous film can be formed by anodizing of titanium specimens in the hot phosphate/glycerol electrolyte. ► The mesoporous film formed at 20 V without annealing was a mixture of amorphous phase and nanograined anatase, which clearly showed strong 〈0 0 1〉 preferred orientation. ► Even without annealing, the as-anodized anatase TiO2 mesoporous film showed high photocatalytic activities for decomposition of water and methylene blue. ► The as-anodized anatase TiO2 mesoporous film also showed superhydrophilicity with UV light irradiation. - Abstract: In this study, anatase crystalline TiO2 mesoporous film was formed by anodizing of titanium specimens without annealing procedures. The specimens were anodized at 3 and 20 V in 0.6 mol dm−3 K2HPO4 and 0.2 mol dm−3 K3PO4/glycerol electrolyte at 433 K. The obtained films had mesoporous structures with pore diameters as small as ∼10 nm. The mesoporous film formed at 20 V without annealing (MP-20V) was a mixture of amorphous phase and nanograined anatase, which clearly showed strong 〈0 0 1〉 preferred orientation, whereas that at 3 V was completely amorphous. Even without annealing, the MP-20V showed high photocatalytic activities for decomposition of water and methylene blue. In contrast, the anodic TiO2 nanotube film formed in NH4F/ethylene glycol electrolyte revealed photocatalytic activities only after annealing at 723 K, because of the amorphous nature of the as-anodized nanotube film. The MP-20V film also showed superhydrophilicity with UV light irradiation.

  4. General Simulated Annealing

    Institute of Scientific and Technical Information of China (English)

    姚新; 李国杰

    1991-01-01

    Simulated annealing is a new kind of random search methods developed in recent years.It can also be considered as an extension to the classical hill-climbing method in AI--probabilistic hill-cimbing.One of its most important features is its global convergence.The convergence of simulated annealing algorithm is determined by state generating probability,state accepting probability,and temperature decreasing rate,This paper gives a generalized simulated annealing algorithm with dynamic generating and accepting probabilities.The paper also shows that the generating and accepting probabilities can adopt many different kinds of distributions while the global convergence is guaranteed.

  5. The Multi-Functional Foot in Athletic Movement: Extraordinary Feats by Our Extraordinary Feet

    Directory of Open Access Journals (Sweden)

    Wilson Jennifer

    2016-03-01

    Full Text Available The unique architecture of the foot system provides a sensitive, multi-tensional method of communicating with the surrounding environment. Within the premise of the paper, we discuss three themes: complexity, degeneracy and bio-tensegrity. Complex structures within the foot allow the human movement system to negotiate strategies for dynamic movement during athletic endeavours. We discuss such complex structures with particular attention to properties of a bio-tensegrity system. Degeneracy within the foot structure offers a distinctive solution to the problems posed by differing terrains and uneven surfaces allowing lower extremity structures to overcome perturbation as and when it occurs. This extraordinary structure offers a significant contribution to bipedalism through presenting a robust base of support and as such, should be given more consideration when designing athletic development programmes.

  6. Annealing process of F- and F{sup +}-centers in Al{sub 2}O{sub 3} single crystal induced by fast neutrons irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Izerrouken, M., E-mail: izerrouken@yahoo.com [Centre de Recherche Nucléaire de Draria, BP.43, Sebala, Draria, Algiers (Algeria); Djouadi, Y. [Université Ferhat Abbas, Faculté des Sciences, Université de Sétif (Algeria); Zirour, H. [Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene, El-Alia, BP 32, Bab-Ezzouar, Algiers (Algeria)

    2014-01-15

    F and F{sup +} centers were produced in Al{sub 2}O{sub 3} single crystal by fast neutrons (E{sub n} > 1.2 MeV) irradiation at low fluence (4.4 × 10{sup 16} n cm{sup −2}). The evolution of defects intensity as a function of temperature and of time at 493, 623 and 823 K was investigated by UV–visible spectrophotometry technique. It can be concluded from the analysis of isochronal and isothermal annealing data, that the F- and F{sup +}-centers annealing process is complex. At low annealing temperature (<473 K), only F- to F{sup +}-center conversion process takes place. At higher temperature (>493 K) the annealing is due to the superposition of several mechanisms with different activation energies. According to our results, the activation energies needed for both F- and F{sup +}-centers elimination are 0.2, 0.3 and 0.03 eV for temperature range of 300–673 K, 673–873 K and >873 K, respectively.

  7. Annealing-induced crystallization of the Er.sub.2./sub.Fe.sub.13.8./sub.B alloy amorphized by irradiation

    Czech Academy of Sciences Publication Activity Database

    Chukalkin, Y.G.; Teplykh, A. E.; Kudrevatykh, N. V.; Bogdanov, S.G.; Choo, K.N.; Lee, S.; Andreev, Alexander V.; Pirogov, A. N.

    2015-01-01

    Roč. 116, č. 3 (2015), s. 242-247. ISSN 0031-918X R&D Projects: GA ČR GAP204/12/0150 Institutional support: RVO:68378271 Keywords : permanent magnets * amorphous state * isochronous annealing * crystallization * neutron diffraction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.761, year: 2014

  8. Nested Quantum Annealing Correction

    OpenAIRE

    Vinci, Walter; Albash, Tameem; Lidar, Daniel A.

    2015-01-01

    We present a general error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. Given any Ising model optimization problem, the encoding replaces each logical qubit by a complete graph of degree $C$, representing the distance of the error-correcting code. A subsequent minor-embedding step then implements the encoding on the underlying hardware graph of the quantum annealer. We demonstrate experimentally th...

  9. Thermal annealing of high dose radiation induced damage at room temperature in alkaline. Stored energy, thermoluminescence and coloration; Aniquilacion termica de dano inducido por irradiacion a altas dosis en haluros alcalinos a 300 k. energia almacenda. Termoluminiscencia y coloracion

    Energy Technology Data Exchange (ETDEWEB)

    Delgado, L.

    1980-07-01

    The possible relation between stored energy, thermoluminescence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminescence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KC1 samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose.Capacity of alkali halides to store energy by irradiation increases as the cation size decreases. (Author) 51 refs.

  10. Discrepancy between ambient annealing and H+ implantation in optical absorption of ZnO

    Science.gov (United States)

    Lv, Jinpeng; Li, Chundong

    2016-05-01

    The discrepancy between sub-bandgap absorption in ZnO induced by thermal annealing and H+ implantation is investigated in this study for the first time. Results indicate that nonreductive annealing-induced optical absorption is independent of annealing ambient, and can be assigned to VO, whereas the absorption centers caused by H+ implantation and H2 annealing are primarily associated with VO and ionized Zni.

  11. Stress and annealing induced changes in the Curie temperature of amorphous and nanocrystalline FeZr and FeNb based alloys

    International Nuclear Information System (INIS)

    The stress and annealing dependence of the Curie temperature in FeZrBCu alloys is presented. A change of about 50 /GPa has been observed. The change in amorphous matrix composition upon crystallization produces an expected increase in TC (about 200 C) which is similar to the experimentally observed increase. This behaviour is opposite to that observed in Fe-Nb based alloys. (orig.)

  12. Temperature control during annealing

    International Nuclear Information System (INIS)

    Temperature control at a weld between a tube and tube plate having heat input from an inductive heating probe to effect annealing of the weld is performed with the aid of a signal generating receptor coil coupled with the probe. The signal from the coil experiences a characteristic change when the temperature of the weld reaches the required annealing temperature and this signal is used to control the heat input to the weld. The receptor coil can be inside the tube, outside the tube, embracing a number of similar tubes, or may be inside an adjacent tube. At the required anneal temperature, the materials of the tube and weld reach their Curie point which brings about a permeability change. (author)

  13. Extraordinary surface voltage effect in the invisibility cloak with an active device inside

    CERN Document Server

    Zhang, Baile; Wu, Bae-Ian; Kong, Jin Au

    2007-01-01

    The electromagnetic field solution for a spherical invisibility cloak with an active device inside is established. It is found that extraordinary electric and magnetic surface voltages are induced at the inner boundary of a spherical cloak, which prevent electromagnetic waves from going out. The phase and handness information of polarized waves obliquely incident on such special boundaries is kept in the reflected waves. The values of the surface voltages due to an electric dipole with an arbitrary position inside the concealed region are found to be equal to the auxiliary scalar potentials, which consequently gain physical counterparts in this special case.

  14. Extraordinary optical transmission in nanopatterned ultrathin metal films without holes.

    Science.gov (United States)

    Peer, Akshit; Biswas, Rana

    2016-02-18

    We experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ∼750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller than the period, with an enhancement of ∼2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (∼5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ∼40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ∼30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing. PMID:26853881

  15. Origins of flash lamp annealing induced p-n junction leakages in a 45 nm p-MOSFET with strained SiGe source/drain

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, C Y; Fang, Y K [VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Hsieh, J C; Hsia, H; Lin, S S; Hou, C S; Ku, K C; Sheu, Y M, E-mail: ykfang@eembox.ee.ncku.edu.t [Platform-2 Division/R and D, Taiwan Semiconductor Manufacturing Company, 8 Li-Hsin Rd 6, Hsinchu Science Park, Hsinchu 300, Taiwan (China)

    2009-05-07

    The effects of flash lamp annealing (FLA) on source/drain (S/D) junction leakage of a 45 nm deep-submicrometre p-MOSFET with strained SiGe S/D were investigated in detail. Based on activation energy measurements, we analyse the origins of the junction leakage currents. Without FLA, the junction leakage is dominated by the trap generation current, while with FLA the leakage current is facilitated by both trap generation and band-to-band tunnelling under low and high reverse biases, respectively.

  16. Impact Toughness of 0.2 Pct C-1.5 Pct Si-(1.5 to 5) Pct Mn Transformation-Induced Plasticity-Aided Steels with an Annealed Martensite Matrix

    Science.gov (United States)

    Tanino, Hikaru; Horita, Masaomi; Sugimoto, Koh-Ichi

    2016-05-01

    The impact properties of 0.2 pct C-1.5 pct Si-(1.5 to 5) pct Mn transformation-induced plasticity (TRIP)-aided steels with an annealed martensite matrix which had been subjected to isothermal transformation after inter-critical annealing were investigated for potential automotive applications. The impact properties are related to the retained austenite characteristics of the steels. The products of tensile strength (TS) and Charpy impact absorbed value (CIAV) were the same for the 1.5 and 5 pct Mn steels, although the ductile-brittle transition temperature was higher for the latter. The impact properties of the 3 pct Mn steel were worse than these two steels. The high TS × CIAV value for the 5 pct Mn steel at 293 K (25 °C) was mainly caused by the TRIP effect of a larger amount of retained austenite (36 vol pct) and the hardened matrix structure; low retained austenite stability and/or a hard martensite-austenite phase reduced this value. The higher ductile-brittle transition temperature of the 5 pct Mn steel was associated with Mn segregation, a large amount of unstable retained austenite on prior austenitic grain boundaries, and decreased cleavage fracture stress owing to the high Mn content.

  17. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  18. Study of the optical properties of etched alpha tracks in annealed and non-annealed CR-39 polymeric detectors

    International Nuclear Information System (INIS)

    The UV–visible absorption spectra of virgin and alpha particle-irradiated, annealed and non-annealed CR-39 polymeric track detectors were investigated using a UV–visible spectrometer (Shimadzu mini 1240). Isothermal annealing experiments were carried out on poly allyl diglycol carbonate (PADC) films based nuclear track detectors (NTDs) exposed to a 241Am source. A shifting and broadening of the UV–visible peaks was observed as a result of the etched alpha tracks in the non-annealed and annealed PADC films. The UV–visible spectra of the virgin and non-annealed α-irradiated PADC polymer films displayed a decreasing trend in their optical energy band gaps, both direct and indirect, whereas those measured for the annealed α-irradiated ones showed no significant change. This drop in the energy band gap with increasing fluence is discussed on the basis of the alpha particle- and thermal annealing-induced modifications in the PADC polymeric detector. The results clearly showed that the values for the indirect energy band gap were lower than the corresponding values for the direct band gap. In addition, the Urbach energy was estimated from the Urbach edge, and exhibited roughly the same trend as the optical band gap. Finally, this study presents new results showing that the annealed PADC films were highly insensitive to alpha particles. - Highlights: • UV–visible absorption through etched alpha tracks in annealed and non-annealed PADC films was investigated. • Films of PADC based NTDs were irradiated with different fluences from alpha particles. • PADC film samples were annealed at a temperature of 120 °C for durations of 2, 4, 6, 8, and 10 h. • It is a good method for relative fluence or dose reading

  19. Ecophenotypic plasticity leads to extraordinary gastropod shells found on the "Roof of the World".

    Science.gov (United States)

    Clewing, Catharina; Riedel, Frank; Wilke, Thomas; Albrecht, Christian

    2015-07-01

    The often extraordinary shell forms and shapes of gastropods found in palaeolakes, such as the highly diverse Gyraulus fauna of the famous Steinheim Basin, have been puzzling evolutionary biologists for centuries, and there is an ongoing debate whether these aberrant shell forms are indicative of true species (or subspecies) or ecophenotypic morphs. Interestingly, one of the Steinheim Gyraulus morphs - a corkscrew-like open-coiled shell - has a recent analogue in the Lake Bangong drainage system on the western Tibetan Plateau. Therefore, a combination of morphological, molecular, palaeolimnological, and ecological analyses was used in this study to assess whether the extraordinary shell shape in Gyraulus sp. from this drainage system represents a (young) ecophenotypic phenomenon or if it has been genetically fixed over an extended period of time. Our morphological, ecological, and palaeolimnological data suggest that the corkscrew-like specimens remain restricted to a small pond near Lake Bangong with an elevated pH value and that the colonization may have occurred recently. The phylogenetic reconstruction based on two gene fragments shows that these nonplanispiral specimens cluster within the previous described Tibetan Plateau Gyraulus clade N2. A network analysis indicates that some haplotypes are even shared by planispiral and nonplanispiral specimens. Given the ephemerality of the phenomenon, the compact network patterns inferred, the likely young phylogenetic age of the aberrant Gyraulus shells studied, and the ecological peculiarities of the study site, we suggest that the evolution of the aberrant shell forms on the Tibetan Plateau could likely be considered as a rapid ecophenotypic response, possibly induced by ecological stress. This finding may thus have implications for the ongoing debate about the processes that have caused the extraordinary shell diversity in palaeolakes such as the Steinheim Basin. PMID:26306180

  20. Evanescent wave of extraordinary beam at uniaxial crystal surfaces

    Institute of Scientific and Technical Information of China (English)

    JIA Guang-yi

    2011-01-01

    Under the circumstance of optical axis being in the incident plane, the evanescent wave of total reflection is studied when an extraordinary beam is incident from an isotropic medium upon a uniaxial crystal by using the general characteristics ofuniaxial crystal and electromagnetic field. This paper presents the propagation directions of equiphase plane and the images of evanescent wave, and reveals that the equiamplitude plane and the equiphase plane are not in quadrature any more, and kept at 100%.

  1. Extraordinary transverse magneto-optical Kerr effect in a superlens

    Science.gov (United States)

    Moncada, Edwin; Garcia, Antonio; Cuevas, Juan Carlos

    2015-03-01

    It has been shown that a slab of a negative index material can behave as a superlens enhancing the imaging resolution beyond the wavelength limit. We show here that if such a slab possesses in addition some magneto-optical activity, it could act as an ideal optical filter and exhibit an extraordinary transverse magneto-optical Kerr effect. Moreover, we show that losses, which spoil the imaging resolution of these lenses, are a necessary ingredient to observe this effect.

  2. Extraordinary aluminum coordination in a novel homometallic double complex salt.

    Science.gov (United States)

    Mandai, Toshihiko; Masu, Hyuma; Johansson, Patrik

    2015-07-01

    We have characterized a novel aluminum-based homometallic double complex salt, incorporating discrete octa-coordinated cationic [Al(G3)2](3+) and hexa-coordinated anionic [Al(TfO)4(OH)2](3-) complexes (G3 = triglyme, TfO = trifluoromethanesulfonate). X-ray crystallography, Raman spectra, and DFT calculations demonstrate extraordinary weak Al(3+) coordination in [Al(G3)2](3+). PMID:26024493

  3. Plasmonic Micro Lens for Extraordinary Transmission of Broadband Light

    OpenAIRE

    Sumit Saxena; Raghvendra Pratap Chaudhary; Abhay Singh; Saurabh Awasthi; Shobha Shukla

    2014-01-01

    Extraordinary transmittance and focusing of light in quasi far field region using miniaturized optical devices is a daunting task. A polarization independent, broadband, planar metallic transmissive micro aperture capable of achromatically focusing visible light in quasi far field region is proposed. The calculated enhancement factor of transmission efficiency was about ~2.2. The total transmission after the aperture is about 60%. This high throughput focusing device will open new avenues for...

  4. Extraordinary transverse magneto-optical Kerr effect in a superlens

    CERN Document Server

    Moncada-Villa, E; Cuevas, J C

    2014-01-01

    It has been shown that a slab of a negative index material can behave as a superlens enhancing the imaging resolution beyond the wavelength limit. We show here that if such a slab possesses in addition some magneto-optical activity, it could act as an ideal optical filter and exhibit an extraordinary transverse magneto-optical Kerr effect. Moreover, we show that losses, which spoil the imaging resolution of these lenses, are a necessary ingredient to observe this effect.

  5. The grey zone: the 'ordinary' violence of extraordinary times

    OpenAIRE

    Roy, Srila

    2008-01-01

    The article analyses the 'ordinary' violence of revolutionary politics, particularly acts of gendered and sexual violence that tend to be neglected in the face of the 'extraordinariness' of political terror. Focusing on the extreme left Naxalbari movement of West Bengal, it points to those morally ambiguous 'grey zones' that confound the rigid distinctions between victim and victimizer in insurrectionary politics. Public and private recollections of sexual and gender-based injuries by women a...

  6. Neural basis of extraordinary empathy and altruistic motivation.

    Science.gov (United States)

    Mathur, Vani A; Harada, Tokiko; Lipke, Trixie; Chiao, Joan Y

    2010-07-15

    A central evolutionary challenge for social groups is uniting a heterogeneous set of individuals towards common goals. One means by which social groups form and endure is by endowing group members with extraordinary prosocial proclivities, such as ingroup love, towards other group members. Here we examined the neural basis of extraordinary empathy and altruistic motivation in African-American and Caucasian-American individuals using functional magnetic resonance imaging. Our results indicate that empathy for ingroup members is neurally distinct from empathy for humankind, more generally. People showed greater response within anterior cingulate cortex and bilateral insula when observing the suffering of others, but African-American individuals additionally recruit medial prefrontal cortex when observing the suffering of members of their own social group. Moreover, neural activity within medial prefrontal cortex in response to pain expressed by ingroup relative to outgroup members predicted greater empathy and altruistic motivation for one's ingroup, suggesting that neurocognitive processes associated with self identity underlie extraordinary empathy and altruistic motivation for members of one's own social group. Taken together, our findings reveal distinct neural mechanisms of empathy and altruistic motivation in an intergroup context and may serve as a foundation for future research investigating the neural bases of intergroup prosociality, more broadly construed. PMID:20302945

  7. Some Advances in the Circuit Modeling of Extraordinary Optical Transmission

    Directory of Open Access Journals (Sweden)

    F. Medina

    2009-06-01

    Full Text Available The phenomenon of extraordinary optical transmission (EOT through electrically small holes perforated on opaque metal screens has been a hot topic in the optics community for more than one decade. This experimentally observed frequency-selective enhanced transmission of electromagnetic power through holes, for which classical Bethe's theory predicts very poor transmission, later attracted the attention of engineers working on microwave engineering or applied electromagnetics. Extraordinary transmission was first linked to the plasma-like behavior of metals at optical frequencies. However, the primary role played by the periodicity of the distribution of holes was soon made evident, in such a way that extraordinary transmission was disconnected from the particular behavior of metals at optical frequencies. Indeed, the same phenomenon has been observed in the microwave and millimeter wave regime, for instance. Nowadays, the most commonly accepted theory explains EOT in terms of the interaction of the impinging plane wave with the surface plasmon-polariton-Bloch waves (SPP-Bloch supported by the periodically perforated plate. The authors of this paper have recently proposed an alternative model whose details will be briefly summarized here. A parametric study of the predictions of the model and some new potential extensions will be reported to provide additional insight.

  8. Experimental realization of extraordinary acoustic transmission using Helmholtz resonators

    International Nuclear Information System (INIS)

    The phenomenon of extraordinary acoustic transmission through a solid barrier with an embedded Helmholtz resonator (HR) is demonstrated. The Helmholtz resonator consists of an embedded cavity and two necks that protrude, one on each side of the barrier. Extraordinary transmission occurs for a narrow spectral range encompassing the resonant frequency of the Helmholtz resonator. We show that an amplitude transmission of 97.5% is achieved through a resonator whose neck creates an open area of 6.25% of the total barrier area. In addition to the enhanced transmission, we show that there is a smooth, continuous phase transition in the transmitted sound as a function of frequency. The frequency dependent phase transition is used to experimentally realize slow wave propagation for a narrow-band Gaussian wave packet centered at the maximum transmission frequency. The use of parallel pairs of Helmholtz resonators tuned to different resonant frequencies is experimentally explored as a means of increasing the transmission bandwidth. These experiments show that because of the phase transition, there is always a frequency between the two Helmholtz resonant frequencies at which destructive interference occurs whether the resonances are close or far apart. Finally, we explain how the phase transition associated with Helmholtz-resonator-mediated extraordinary acoustic transmission can be exploited to produce diffractive acoustic components including sub-wavelength thickness acoustic lenses

  9. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  10. [Precise management of extraordinary agent wound by establishment of a multidisciplinary cooperation mechanism].

    Science.gov (United States)

    Liu, Yi

    2016-06-01

    With the development of social economy, people's lifestyle has changed accompanied with the problem of population aging. The spectrum of disease also varied accordingly, thus led to complicated and varied wound aetiology, along with the formation of innumerably changed acute and chronic wounds. Therefore, it is hard to meet the requirement of multidisciplinary knowledge and technique in the diagnosis and treatment of some extraordinary agent wound with a single discipline. The extraordinary agent wound is caused by some uncommon or rare etiological factors, the specialty of which lays on the unique mechanism of wound formation, and a lot of disciplines were involved in the diagnosis and management of the wound. A unification of multiple disciplines is needed to integrate the relevant theory and technique to care the wound by giving consideration of the symptom and the aetiology. The primary diseases which induced the uncommon agent wound should be targeted and treated effectively; meanwhile, a comprehensive treatment combined with multiple new wound management techniques should be carried out to realize the objective of precise treatment. PMID:27321484

  11. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    Science.gov (United States)

    Siegel, Jakub; Krajcar, Robert; Kolská, Zdeňka; Hnatowicz, Vladimír; Švorčík, Václav

    2011-11-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness.

  12. Shock, Post-Shock Annealing, and Post-Annealing Shock in Ureilites

    Science.gov (United States)

    Rubin, Alan E.

    2006-01-01

    The thermal and shock histories of ureilites can be divided into four periods: 1) formation, 2) initial shock, 3) post-shock annealing, and 4) post-annealing shock. Period 1 occurred approx.4.55 Ga ago when ureilites formed by melting chondritic material. Impact events during period 2 caused silicate darkening, undulose to mosaic extinction in olivines, and the formation of diamond, lonsdaleite, and chaoite from indigenous carbonaceous material. Alkali-rich fine-grained silicates may have been introduced by impact injection into ureilites during this period. About 57% of the ureilites were unchanged after period 2. During period 3 events, impact-induced annealing caused previously mosaicized olivine grains to become aggregates of small unstrained crystals. Some ureilites experienced reduction as FeO at the edges of olivine grains reacted with C from the matrix. Annealing may also be responsible for coarsening of graphite in a few ureilites, forming euhedral-appearing, idioblastic crystals. Orthopyroxene in Meteorite Hills (MET) 78008 may have formed from pigeonite by annealing during this period. The Rb-Sr internal isochron age of approx.4.0 Ga for MET 78008 probably dates the annealing event. At this late date, impacts are the only viable heat source. About 36% of ureilites experienced period 3 events, but remained unchanged afterwards. During period 4, approx.7% of the ureilites were shocked again, as is evident in the polymict breccia, Elephant Moraine (EET) 83309. This rock contains annealed mosaicized olivine aggregates composed of small individual olivine crystals that exhibit undulose extinction. Ureilites may have formed by impact-melting chondritic material on a primitive body with heterogeneous O isotopes. Plagioclase was preferentially lost from the system due to its low impedance to shock compression. Brief melting and rapid burial minimized the escape of planetary-type noble gases from the ureilitic melts. Incomplete separation of metal from silicates

  13. Stresses on nuclear power plant buildings by extraordinary events

    International Nuclear Information System (INIS)

    Nuclear power plant buildings must be functional to such an extend that even after the occurence of extraordinary events (earthquake, airoplane crash, gas cloud explosion), the reactor can be safety shut off, in order to avoid danger from the nuclear power plant. Evidence for this can only be given by calculations which shall meet the following requirements: The calculation results shall be safe and reliable. The calculation effort shall match the realizable accuracy. The calculation shall lead to an economical determination. An example of ascertainment of nuclear power plants in regard to earthquakes, shows the difficulties standing against a fulfillment of these requirements. (orig.)

  14. Thermal annealing of fission tracks in synthetic apatites

    OpenAIRE

    Carpena, J.; Lacout, Jean-Louis

    2010-01-01

    Synthetic analogues of poor-silicated natural apatites have been doped with uranium. These minerals have been irradiated with a thermal neutron dose in the aim to induce the 235U fission and to obtain a fission track population. Thermal annealing experiments have been performed on the fission track population and allow us to compare the ability of the synthetic minerals to anneal such nuclear damages with their natural analogues. The thermal of the fission tracks in the synthetic minerals nee...

  15. Influences of Annealing on Residual Stress and Structure of HfO2 Films

    Institute of Scientific and Technical Information of China (English)

    SHEN Yan-Ming; SHAO Shu-Ying; DENG Zhen-Xia; HE Hong-Bo; SHAO Jian-Da; FAN Zheng-Xiu

    2007-01-01

    HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

  16. Improvement of superconductivity in Fe1+yTe0.6Se0.4 induced by annealing with CaF2 and SmF3

    International Nuclear Information System (INIS)

    Highlights: • The excess Fe can be removed by annealing with CaF2 and SmF3. Furthermore, the improvement of superconductivity of Fe1+yTe0.6Se0.4 single crystal is observed. • Compared with the pervious annealing materials, these two new annealing materials, CaF2 and SmF3, are safe and easy-handing. • After annealing, the largest Tc and Jc can exceed 13 K and 1.0 × 105 A/cm2 (5 K, in self-field). - Abstract: We report detailed studies of the CaF2 and SmF3 annealing effects in Fe1+yTe0.6Se0.4 single crystals. Superconductivity in Fe1+yTe0.6Se0.4 single crystals was improved after annealing, which strongly suggested the effectiveness of the CaF2 and SmF3 annealing. In detail, no matter which annealing material was employed, the largest values of superconducting transition temperature and critical current density reached about 14 K and 1.0 × 105 A/cm2 (5 K, in self-field), respectively. Furthermore, compared with the pervious annealing materials, CaF2 and SmF3 are safe and easy-handing

  17. multicast utilizando Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Yezid Donoso

    2005-01-01

    Full Text Available En este artículo se presenta un método de optimización multiobjetivo para la solución del problema de balanceo de carga en redes de transmisión multicast, apoyándose en la aplicación de la meta-heurística de Simulated Annealing (Recocido Simulado. El método minimiza cuatro parámetros básicos para garantizar la calidad de servicio en transmisiones multicast: retardo origen destino, máxima utilización de enlaces, ancho de banda consumido y número de saltos. Los resultados devueltos por la heurística serán comparados con los resultados arrojados por el modelo matemático propuesto en investigaciones anteriores.

  18. Manipulation of extraordinary acoustic transmission by a tunable bull's eye structure

    International Nuclear Information System (INIS)

    Extraordinary acoustic transmission (EAT) has been investigated in a tunable bull's eye structure. We demonstrate that the transmission coefficient of acoustic waves can be modulated by a grating structure. When the grating is located at a distance of 0.5 mm from the base plate, the acoustic transmission shows an 8.77-fold enhancement compared to that by using a traditional bull's eye structure. When the distance increases to 1.5 mm, the transmission approaches zero, indicating a total reflection. Thus, we can make an efficient modulation of acoustic transmission from 0 to 877%. The EAT effects have been ascribed to the coupling of structure-induced resonance with the diffractive wave and the waveguide modes, as well as the Fabry-Perot resonances. As a potential application, the modulation of far-field collimation is illustrated in the proposed bull's eye structure. (rapid communication)

  19. Radiation annealing in cuprous oxide

    DEFF Research Database (Denmark)

    Vajda, P.

    1966-01-01

    Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

  20. Quantum Annealing of Hard Problems

    OpenAIRE

    Jorg, Thomas; Krzakala, Florent; Kurchan, Jorge; Maggs, A C

    2009-01-01

    Quantum annealing is analogous to simulated annealing with a tunneling mechanism substituting for thermal activation. Its performance has been tested in numerical simulation with mixed conclusions. There is a class of optimization problems for which the efficiency can be studied analytically using techniques based on the statistical mechanics of spin glasses.

  1. Free electron laser annealing of silicon carbide

    International Nuclear Information System (INIS)

    We have studied the application of FEL for the semiconductor processing on the practical device fabrication. FEL annealing at a variety of wavelengths (10.0-13.0 μm) have been performed under room temperature for amorphous silicon carbide (a-SiC) and Nitrogen implanted cubic silicon carbide (3C-SiC) films. Infrared absorption spectroscopy indicated that the annealing at 12.6 μm, corresponding to the absorption peak of Si-C stretch mode, was effective for recrystallization. On the other hand, Hall effect measurements showed the increase of carrier density for N-implanted 3C-SiC films at around 10.4 μm, whereas the absorption was weak at this wavelength. The present results demonstrated that the direct excitation of the lattice vibration with FEL can induce the reconstruction of disordered atoms and activating dopants even at room temperature. (author)

  2. Compact integrated optical isolation based on extraordinary dichroic transmission through a magnetoplasmonic waveguide grating

    Science.gov (United States)

    Vanwolleghem, Mathias; Magdenko, Liubov; Beauvillain, Pierre; Dagens, Béatrice

    2010-05-01

    Using rigorous magneto-optical waveguide modelling, we have calculated the dichroic transmission of the fundamental TM waveguide mode through a magnetoplasmonic waveguide grating. The ferromagnetic metallic grating material is a CoFe alloy that is magnetized parallel to the grating. When deposited on top of a standard III-V waveguide with a thin top cladding layer and thus placed in the evanescent tail of the guided TM ground mode, it induces both plasmonic and magneto-optic effects in the transmission of this waveguide grating. Due to the direction of the magnetization - perpendicular to the light propagation and parallel to the waveguide layer interfaces - the integrated transverse magnetooptic Kerr effect induces non-reciprocal dichroic transmission for the guided TM light. We have numerically studied the TM ground mode dichroism (for a telecom wavelength of 1300nm) as a function of the cladding layer thickness and the grating parameters, namely its duty cycle, period and thickness. This study has revealed that there exist clear grating designs where the dichroic transmission is resonantly enhanced as compared to the case where the ferromagnetic metal is a continuous film. A detailed study of the field maps associated to these points reveals that the guided TM ground mode resonantly couples to a vertical cavity plasmonic resonance in the air slots of the CoFe grating. This behaviour is reminiscent of extraordinary optical transmission but here in an integrated non-reciprocal version. We have previously reported experimentally strong integrated and forward transparent optical isolation based on this TM dichroism but using a continuous film [1,2]. The present design study indicates that the extraordinary magnetoplasmonic effects taking place in a properly designed CoFe grating improves the performance of this device by at least a factor 4.

  3. Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

    Science.gov (United States)

    Reyes, D. F.; Ulloa, J. M.; Guzman, A.; Hierro, A.; Sales, D. L.; Beanland, R.; Sanchez, A. M.; González, D.

    2015-11-01

    Type II emission optoelectronic devices using GaAsSb strain reduction layers (SRL) over InAs quantum dots (QDs) have aroused great interest. Recent studies have demonstrated an extraordinary increase in photoluminescence (PL) intensity maintaining type II emission after a rapid thermal anneal (RTA), but with an undesirable blueshift. In this work, we have characterized the effect of RTA on InAs/GaAs QDs embedded in a SRL of GaAsSb by transmission electron microscopy (TEM) and finite element simulations. We find that annealing alters both the distribution of Sb in the SRL as well as the exchange of cations (In and Ga) between the QDs and the SRL. First, annealing causes modifications in the capping layer, reducing its thickness but maintaining the maximum Sb content and improving its homogeneity. In addition, the formation of Sb-rich clusters with loop dislocations is noticed, which seems not to be an impediment for an increased PL intensity. Second, RTA produces flatter QDs with larger base diameter and induces a more homogeneous QD height distribution. The Sb is accumulated over the QDs and the RTA enlarges the Sb-rich region, but the Sb contents are very similar. This fact leaves the type II alignment without major changes. Atomic-scale strain analysis of the nanostructures reveal a strong intermixing of In/Ga between the QDs and the capping layer, which is the main responsible mechanism of the PL blueshift. The improvement of the crystalline quality of the capping layer together with higher homogeneity QD sizes could be the origin of the enhancement of the PL emission.

  4. Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

    International Nuclear Information System (INIS)

    Type II emission optoelectronic devices using GaAsSb strain reduction layers (SRL) over InAs quantum dots (QDs) have aroused great interest. Recent studies have demonstrated an extraordinary increase in photoluminescence (PL) intensity maintaining type II emission after a rapid thermal anneal (RTA), but with an undesirable blueshift. In this work, we have characterized the effect of RTA on InAs/GaAs QDs embedded in a SRL of GaAsSb by transmission electron microscopy (TEM) and finite element simulations. We find that annealing alters both the distribution of Sb in the SRL as well as the exchange of cations (In and Ga) between the QDs and the SRL. First, annealing causes modifications in the capping layer, reducing its thickness but maintaining the maximum Sb content and improving its homogeneity. In addition, the formation of Sb-rich clusters with loop dislocations is noticed, which seems not to be an impediment for an increased PL intensity. Second, RTA produces flatter QDs with larger base diameter and induces a more homogeneous QD height distribution. The Sb is accumulated over the QDs and the RTA enlarges the Sb-rich region, but the Sb contents are very similar. This fact leaves the type II alignment without major changes. Atomic-scale strain analysis of the nanostructures reveal a strong intermixing of In/Ga between the QDs and the capping layer, which is the main responsible mechanism of the PL blueshift. The improvement of the crystalline quality of the capping layer together with higher homogeneity QD sizes could be the origin of the enhancement of the PL emission. (paper)

  5. Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique

    International Nuclear Information System (INIS)

    In this work, a reformed crystallization annealing technique is presented for the solid phase crystallization (SPC) of amorphous silicon (a-Si) on SiNx-coated quartz substrate. This technique includes a two-step annealing process which consists of a low-temperature (475 °C) classical furnace annealing for nucleation of Si and a high-temperature (900 °C) grain growth process of polycrystalline silicon (poly-Si) during thermal annealing in classical tube furnace. The aim of this reformed two-step annealing technique is reducing the long (up to 48 h) crystallization annealing duration of single step annealing at low temperatures (∼ 600 °C) while maintaining the film quality, as low-temperature single step annealing, by using reformed technique. Continuous p-type poly-Si film was formed on quartz substrate thanks to exodiffusion of boron, which was deposited prior to a-Si, through Si film by thermal annealing. The stress and degree of crystallinity of the p-type poly-Si were studied by the micro-Raman Spectroscopy. The crystallization fraction value of 95% was deduced for annealed samples at 900 °C, independent from crystallization technique. On the other hand, the Raman analysis points out that compressive stress was induced by increasing the annealing duration at 900 °C. X-ray diffraction (XRD) analysis reveals that the preferred crystallite orientation of the films, independent from crystallization temperature and substrates, is <111>. Additionally, the average crystallite size calculated from XRD patterns increases from 69 Å to 165 Å by using reformed two-step annealing instead of single step annealing at 900 °C for 90 min. The exodiffusion of boron into the silicon film was deduced from secondary ion mass spectrometry (SIMS) analysis and the p+/p graded boron profile was obtained, which may result higher carrier diffusion length and longer carrier life time. Finally, the annealing duration dramatically decrease to 9 h by using reformed two-step annealing

  6. Solvent vapor annealing of an insoluble molecular semiconductor

    KAUST Repository

    Amassian, Aram

    2010-01-01

    Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

  7. Reactor vessel annealing system

    Science.gov (United States)

    Miller, Phillip E.; Katz, Leonoard R.; Nath, Raymond J.; Blaushild, Ronald M.; Tatch, Michael D.; Kordalski, Frank J.; Wykstra, Donald T.; Kavalkovich, William M.

    1991-01-01

    A system for annealing a vessel (14) in situ by heating the vessel (14) to a defined temperature, composed of: an electrically operated heater assembly (10) insertable into the vessel (14) for heating the vessel (14) to the defined temperature; temperature monitoring components positioned relative to the heater assembly (10) for monitoring the temperature of the vessel (14); a controllable electric power supply unit (32-60) for supplying electric power required by the heater assembly (10); a control unit (80-86) for controlling the power supplied by the power supply unit (32-60); a first vehicle (2) containing the power supply unit (32-60); a second vehicle (4) containing the control unit (80-86); power conductors (18,22) connectable between the power supply unit (32-60) and the heater unit (10) for delivering the power supplied by the power supply unit (32-60) to the heater assembly (10); signal conductors (20,24) connectable between the temperature monitoring components and the control unit (80-86) for delivering temperature indicating signals from the temperature monitoring components to the control unit (80-86); and control conductors (8) connectable between the control unit (80-86) and the power supply unit (32-60) for delivering to the power supply unit (32-60) control signals for controlling the level of power supplied by the power supply unit (32-60) to the heater assembly (10).

  8. Quantum annealing speedup over simulated annealing on random Ising chains

    CERN Document Server

    Zanca, Tommaso

    2015-01-01

    We show clear evidence of a speedup of a quantum annealing (QA) Schr\\"odinger dynamics over a Glauber master-equation simulated annealing (SA) for a random Ising model in one dimension. Annealings are tackled on equal footing, by a deterministic dynamics of the resulting Jordan-Wigner fermionic problems. We find that disorder, without frustration, makes both SA and real-time QA logarithmically slow in the annealing time $\\tau$, but QA shows a quadratic speedup with respect to SA. We also find that an imaginary-time Schr\\"odinger QA dynamics provides a further exponential speedup, with an asymptotic residual error compatible with a power-law $\\tau^{-\\mu}$.

  9. Acoustic Wavefront Manipulation: Impedance Inhomogeneity and Extraordinary Reflection

    CERN Document Server

    Zhao, Jiajun; Chen, Zhining; Li, Baowen

    2013-01-01

    Optical wavefront can be manipulated by interfering elementary beams with phase inhomogeneity. Therefore a surface allowing huge, abrupt and position-variant phase change would enable all possibilities of wavefront engineering. However, one may not have the luxury of efficient abrupt-phase-changing materials in acoustics. This motivates us to establish a counterpart mechanism for acoustics, in order to empower the wide spectrum of novel acoustic applications. Remarkably, the proposed impedance-governed generalized Snell's law (IGSL) of reflection is distinguished from that in optics. Via the manipulation of inhomogeneous acoustic impedance, extraordinary reflection can be tailored for unprecedented wavefront manipulation while ordinary reflection can be surprisingly switched on or off. Our results may power the acoustic-wave manipulation and engineering. We demonstrate novel acoustic applications by planar surfaces designed with IGSL.

  10. Extraordinary sensitivity enhancement by metasurfaces in terahertz detection of antibiotics.

    Science.gov (United States)

    Xie, Lijuan; Gao, Weilu; Shu, Jie; Ying, Yibin; Kono, Junichiro

    2015-01-01

    We have detected trace amounts of molecules of antibiotics (kanamycin sulfate) dispersed on metasurfaces with terahertz (THz) spectroscopy. Utilizing the extraordinary optical transmission resonance of an array of square-shaped slits on a silicon substrate at ~0.3 THz, we were able to monitor varying concentrations of kanamycin sulfate as low as ~100 picogram/L. In contrast, the lowest detectable concentration of kanamycin sulfate on silicon without any metallic structure was ~1 gram/L. This dramatic ~10(10) times enhancement of sensitivity is due to the near-field enhancement of THz electric fields by the metamaterial structure. This result thus demonstrates the power and usefulness of metamaterial-assisted THz spectroscopy in trace molecular detection for biological and chemical sensing as well as for food product quality and safety inspection and control. PMID:25728144

  11. An extraordinary transmission analogue for enhancing microwave antenna performance

    Directory of Open Access Journals (Sweden)

    Sarin V. Pushpakaran

    2015-10-01

    Full Text Available The theory of diffraction limit proposed by H.A Bethe limits the total power transfer through a subwavelength hole. Researchers all over the world have gone through different techniques for boosting the transmission through subwavelength holes resulting in the Extraordinary Transmission (EOT behavior. We examine computationally and experimentally the concept of EOT nature in the microwave range for enhancing radiation performance of a stacked dipole antenna working in the S band. It is shown that the front to back ratio of the antenna is considerably enhanced without affecting the impedance matching performance of the design. The computational analysis based on Finite Difference Time Domain (FDTD method reveals that the excitation of Fabry-Perot resonant modes on the slots is responsible for performance enhancement.

  12. An extraordinary transmission analogue for enhancing microwave antenna performance

    International Nuclear Information System (INIS)

    The theory of diffraction limit proposed by H.A Bethe limits the total power transfer through a subwavelength hole. Researchers all over the world have gone through different techniques for boosting the transmission through subwavelength holes resulting in the Extraordinary Transmission (EOT) behavior. We examine computationally and experimentally the concept of EOT nature in the microwave range for enhancing radiation performance of a stacked dipole antenna working in the S band. It is shown that the front to back ratio of the antenna is considerably enhanced without affecting the impedance matching performance of the design. The computational analysis based on Finite Difference Time Domain (FDTD) method reveals that the excitation of Fabry-Perot resonant modes on the slots is responsible for performance enhancement

  13. Asymmetric selection and the evolution of extraordinary defences.

    Science.gov (United States)

    Urban, Mark C; Bürger, Reinhard; Bolnick, Daniel I

    2013-01-01

    Evolutionary biologists typically predict future evolutionary responses to natural selection by analysing evolution on an adaptive landscape. Much theory assumes symmetric fitness surfaces even though many stabilizing selection gradients deviate from symmetry. Here we revisit Lande's adaptive landscape and introduce novel analytical theory that includes asymmetric selection. Asymmetric selection and the resulting skewed trait distributions bias equilibrium mean phenotypes away from fitness peaks, usually toward the flatter shoulder of the individual fitness surface. We apply this theory to explain a longstanding paradox in biology and medicine: the evolution of excessive defences against enemies. These so-called extraordinary defences can evolve in response to asymmetrical selection when marginal risks of insufficient defence exceed marginal costs of excessive defence. Eco-evolutionary feedbacks between population abundances and asymmetric selection further exaggerate these defences. Recognizing the effect of asymmetrical selection on evolutionary trajectories will improve the accuracy of predictions and suggest novel explanations for apparent sub-optimality. PMID:23820378

  14. An extraordinary transmission analogue for enhancing microwave antenna performance

    Energy Technology Data Exchange (ETDEWEB)

    Pushpakaran, Sarin V., E-mail: sarincrema@gmail.com [Department of Electronics, Govt. College, Chittur, Palakkad, Kerala (India); Purushothaman, Jayakrishnan M.; Chandroth, Aanandan; Pezholil, Mohanan; Kesavath, Vasudevan [Centre for Research in Electromagnetics and Antennas, Cochin University of Science and Technology, Cochin-22, Kerala (India)

    2015-10-15

    The theory of diffraction limit proposed by H.A Bethe limits the total power transfer through a subwavelength hole. Researchers all over the world have gone through different techniques for boosting the transmission through subwavelength holes resulting in the Extraordinary Transmission (EOT) behavior. We examine computationally and experimentally the concept of EOT nature in the microwave range for enhancing radiation performance of a stacked dipole antenna working in the S band. It is shown that the front to back ratio of the antenna is considerably enhanced without affecting the impedance matching performance of the design. The computational analysis based on Finite Difference Time Domain (FDTD) method reveals that the excitation of Fabry-Perot resonant modes on the slots is responsible for performance enhancement.

  15. Irradiation and annealing sensitivity studies

    International Nuclear Information System (INIS)

    This report describes an evaluation of foreign steel production made to US guidelines for improved radiation resistance (new vessel forms) and investigations on radiation sensitivity and post-irradiation annealing for embrittlement relief (vessels produced 1971 or earlier). In the study of foreign steels, investigations coordinated by the IAEA and involving steels produced by West Germany, France, and Japan have confirmed the adequacy of the US-developed specifications. Progress of the Irradiation-Anneal-Reirradiation investigations are described, noting the synergism between copper impurities and nickel alloying in radiation sensitivity and annealing response. The PVI Surveillance Dosimetry Improvement Program, which as primary application to the more radiation sensitive vessels, is also discussed

  16. U.S./China Bilateral Symposium on Extraordinary Floods

    Science.gov (United States)

    Kirby, W.

    Accurate appraisal of the risk of extreme floods has long been of concern to hydrologists and water resources managers in both the United States and China. In order to exchange information, assess current developments, and discuss further needs in extreme flood analysis, the U.S. Geological Survey (USGS) and the Bureau of Hydrology of the Ministry of Water Resources and Electric Power of the People's Republic of China (PRC) held the Bilateral Symposium on the Analysis of Extraordinary Flood Events, October 14-18, 1985, in Nanjing, China. Co-convenors of the symposium were Marshall E. Moss (USGS) and Hua Shiqian (Nanjing Research Institute of Hydrology). Liang Ruiju (East China Technical University of Water Resources) was executive secretary of the organizing committee. Participants included 23 U.S. delegates, 36 Chinese delegates, and five guests from other countries. Of the U.S. delegates, 13 were from federal agencies, seven were from universities, and three were private consultants. The U.S. National Science Foundation gave financial support to the nonfederal U.S. delegates. Major topics covered in the 52 papers presented included detection of historical floods and evaluation of the uncertainties in their peak discharges and times of occurrence,frequency analysis and design flood determination in the presence of extraordinary floods and historic floods, anduse of storm data in determining design storms and design floods, The symposium was followed by a 6-day study tour in central China, during which laboratories, field activities, and offices of various water resources agencies were visited and sites of documented historic floods on the Yangtze River and its tributaries were examined.

  17. Improvement of superconductivity in Fe{sub 1+y}Te{sub 0.6}Se{sub 0.4} induced by annealing with CaF{sub 2} and SmF{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiong [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Sun, Yue [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656 (Japan); Zhang, Yufeng; Zhou, Wei; Yuan, Feifei [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China); Shi, Zhixiang, E-mail: zxshi@seu.edu.cn [Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)

    2015-10-15

    Highlights: • The excess Fe can be removed by annealing with CaF{sub 2} and SmF{sub 3}. Furthermore, the improvement of superconductivity of Fe{sub 1+y}Te{sub 0.6}Se{sub 0.4} single crystal is observed. • Compared with the pervious annealing materials, these two new annealing materials, CaF{sub 2} and SmF{sub 3}, are safe and easy-handing. • After annealing, the largest T{sub c} and J{sub c} can exceed 13 K and 1.0 × 10{sup 5} A/cm{sup 2} (5 K, in self-field). - Abstract: We report detailed studies of the CaF{sub 2} and SmF{sub 3} annealing effects in Fe{sub 1+y}Te{sub 0.6}Se{sub 0.4} single crystals. Superconductivity in Fe{sub 1+y}Te{sub 0.6}Se{sub 0.4} single crystals was improved after annealing, which strongly suggested the effectiveness of the CaF{sub 2} and SmF{sub 3} annealing. In detail, no matter which annealing material was employed, the largest values of superconducting transition temperature and critical current density reached about 14 K and 1.0 × 10{sup 5} A/cm{sup 2} (5 K, in self-field), respectively. Furthermore, compared with the pervious annealing materials, CaF{sub 2} and SmF{sub 3} are safe and easy-handing.

  18. Stochastic Annealing for Variational Inference

    OpenAIRE

    Gultekin, San; Zhang, Aonan; Paisley, John

    2015-01-01

    We empirically evaluate a stochastic annealing strategy for Bayesian posterior optimization with variational inference. Variational inference is a deterministic approach to approximate posterior inference in Bayesian models in which a typically non-convex objective function is locally optimized over the parameters of the approximating distribution. We investigate an annealing method for optimizing this objective with the aim of finding a better local optimal solution and compare with determin...

  19. Austenite formation during intercritical annealing

    Directory of Open Access Journals (Sweden)

    A. Lis

    2008-07-01

    Full Text Available Purpose: of this paper is the effect of the soft annealing of initial microstructure of the 6Mn16 steel on the kinetics of the austenite formation during next intercritical annealing.Design/methodology/approach: Analytical TEM point analysis with EDAX system attached to Philips CM20 was used to evaluate the concentration of Mn, Ni and Cr in the microstructure constituents of the multiphase steel and mainly Bainite- Martensite islands.Findings: The increase in soft annealing time from 1-60 hours at 625°C increases Mn partitioning between ferrite and cementite and new formed austenite and decreases the rate of the austenite formation during next intercritical annealing in the (α+γ temperature range at 700 and 750°C. The general equations for carbide dissolution and austenite formation in intercritical temperature range were established.Research limitations/implications: The final multiphase microstructure can be optimised by changing the time / temperature parameters of the intercritical heating in the (α+γ temperature range.Originality/value: The knowledge of partitioning of alloying elements mainly Mn during soft annealing and intercritical heating is very important to optimise the processing technology of intercritical annealing for a given amount of the austenite.

  20. 26 CFR 1.643(a)-4 - Extraordinary dividends and taxable stock dividends.

    Science.gov (United States)

    2010-04-01

    ... 26 Internal Revenue 8 2010-04-01 2010-04-01 false Extraordinary dividends and taxable stock dividends. 1.643(a)-4 Section 1.643(a)-4 Internal Revenue INTERNAL REVENUE SERVICE, DEPARTMENT OF THE TREASURY (CONTINUED) INCOME TAX (CONTINUED) INCOME TAXES Estates, Trusts, and Beneficiaries § 1.643(a)-4 Extraordinary dividends and taxable...

  1. Extraordinary electromagnetic localized structures in plasmas: Modulational instability, envelope solitons, and rogue waves

    International Nuclear Information System (INIS)

    We have considered the nonlinear propagation of an extraordinary electromagnetic wave in a transversely magnetized plasma. It is found that, in a weakly relativistic regime, evolution of the amplitude of an extraordinary wave packet is governed by a nonlinear Schrödinger (NLS) equation. The modulational instability of an extraordinary plane wave is investigated. The analytical solutions of the NLS equation in the forms of envelope solitons and rogue waves are reviewed and dependence of their structural properties on relevant parameters of the system is addressed. - Highlights: • We have considered the nonlinear propagation of extraordinary waves in a transversely magnetized plasmas. • The existence condition for nonlinear structures e.g. envelope solitons and rogue waves are examined. • Modulational instability of extraordinary waves has been addressed

  2. Extraordinary electromagnetic localized structures in plasmas: Modulational instability, envelope solitons, and rogue waves

    Energy Technology Data Exchange (ETDEWEB)

    Borhanian, Jafar, E-mail: borhanian@uma.ac.ir

    2015-03-06

    We have considered the nonlinear propagation of an extraordinary electromagnetic wave in a transversely magnetized plasma. It is found that, in a weakly relativistic regime, evolution of the amplitude of an extraordinary wave packet is governed by a nonlinear Schrödinger (NLS) equation. The modulational instability of an extraordinary plane wave is investigated. The analytical solutions of the NLS equation in the forms of envelope solitons and rogue waves are reviewed and dependence of their structural properties on relevant parameters of the system is addressed. - Highlights: • We have considered the nonlinear propagation of extraordinary waves in a transversely magnetized plasmas. • The existence condition for nonlinear structures e.g. envelope solitons and rogue waves are examined. • Modulational instability of extraordinary waves has been addressed.

  3. The isochronal annealing of irradiated n-channel power VDMOSFETs

    Science.gov (United States)

    Ristić, Goran S.; Andjelković, Marko; Savović, Svetislav

    2016-01-01

    The threshold voltage, VT , as well as threshold voltage shift, ΔVT , and its components, the component of threshold voltage shift due to radiation-induced fixed traps in the oxide, ΔVft , and the component of threshold voltage shift due to radiation-induced switching traps near and at gate oxide/substrate interface, ΔVst , are investigated, and fitted very well. The behavior of unannealed fraction of fixed traps during isochronal annealing is also considered. The proposed model describes unannealed fraction very well, and allows the prediction of fixed traps behavior at higher temperature. The number of defect types that are observably active during an isochronal temperature range could be found by this model, showing that isochronal annealing is competitive with isothermal annealing, which is widely used, but much more time consuming.

  4. Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/Cu{sub x}S contacts to p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Wen [School of Mechatronic Engineering and Automation, Shanghai University, Shanghai (China); Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai (China); Wu, Xingyang [School of Mechatronic Engineering and Automation, Shanghai University, Shanghai (China); Song, Peng [School of Mechatronic Engineering and Automation, Shanghai University, Shanghai (China); Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai (China); Zhang, Jianhua, E-mail: jhzhang@staff.shu.edu.cn [School of Mechatronic Engineering and Automation, Shanghai University, Shanghai (China); Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai (China)

    2015-03-15

    Highlights: • The electrical properties of GZO/CuS{sub x} contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu{sub x}S interlayers under different annealing temperatures. It is shown that the GZO/Cu{sub x}S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10{sup −2} Ω cm{sup 2} was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu{sub x}S/p-GaN and Cu{sub x}S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance.

  5. Science identity construction through extraordinary professional development experiences

    Science.gov (United States)

    McLain, Bradley David

    Despite great efforts and expenditures to promote science literacy and STEM career choices, the U.S. continues to lag behind other countries in science education, diminishing our capacity for STEM leadership and our ability to make informed decisions in the face of multiple looming global issues. I suggest that positive science identity construction (the integration of science into one's sense of self so that it becomes a source of inspiration and contributes to lifelong learning) is critical for promoting durable science literacy and pro-science choices. Therefore, the focus of this study was extraordinary professional development experiences for science educators that may significantly impact their sense of self. My hypothesis was that such experiences could positively impact educators' science and science educator identities, and potentially enhance their capacities to impact student science identities. The first part of this hypothesis is examined in this study. Further, I suggest that first-person narratives play an important role in science identity construction. Presenting a new conceptual model that connects experiential learning theory to identity theory through the narrative study of lives, I explored the impacts of subjectively regarded extraordinary professional development experiences on the science identity and science educator identity construction processes for a cohort of fifteen K-12 science teachers during a science-learning-journey to explore the volcanoes of Hawaii. I used a case study research approach under the broader umbrella of a hermeneutic phenomenology to consider four individual cases as lived experiences and to consider the journey as a phenomenon unto itself. Findings suggest science and science educator identities are impacted by such an experience but with marked variability in magnitude and nature. Evidence also suggests important impacts on their other identities. In most instances, science-related impacts were secondary to and

  6. Quantum annealing speedup over simulated annealing on random Ising chains

    Science.gov (United States)

    Zanca, Tommaso; Santoro, Giuseppe E.

    2016-06-01

    We show clear evidence of a quadratic speedup of a quantum annealing (QA) Schrödinger dynamics over a Glauber master equation simulated annealing (SA) for a random Ising model in one dimension, via an equal-footing exact deterministic dynamics of the Jordan-Wigner fermionized problems. This is remarkable, in view of the arguments of H. G. Katzgraber et al. [Phys. Rev. X 4, 021008 (2014), 10.1103/PhysRevX.4.021008], since SA does not encounter any phase transition, while QA does. We also find a second remarkable result: that a "quantum-inspired" imaginary-time Schrödinger QA provides a further exponential speedup, i.e., an asymptotic residual error decreasing as a power law τ-μ of the annealing time τ .

  7. UFOs and nukes. Extraordinary encounters at nuclear weapons sites

    International Nuclear Information System (INIS)

    Everyone knows about the reported recovery of a crashed alien spaceship near Roswell, New Mexico in July 1947. However, most people are unaware that, at the time of the incident, Roswell Army Airfield was home to the world's only atomic bomber squadron, the 509th Bomb Group. Was this merely a coincidence? During the Cold War, the United States and the Soviet Union built thousands of the far more destructive hydrogen bombs, some of them a thousand times as destructive as the first atomic bombs dropped on Japan. If the nuclear standoff between the superpowers had erupted into World War III, human civilization - and perhaps the very survival of our species - would have been at risk. Did this ominous state of affairs come to the attention of outside observers? Was there a connection between the atomic bomber squadron based at Roswell and the reported crash of a UFO nearby? Did those who pilot the UFOs monitor the superpowers' nuclear arms race during the dangerous Cold War era? Do they scrutinize American and Russian weapons sites even now? UFOs and Nukes provides the startling and sometimes shocking answers to these questions. Veteran researcher Robert Hastings has investigated nuclear weapons-related UFO incidents for more than three decades and has interviewed more than 120 ex-US Air Force personnel, from former Airmen to retired Colonels, who witnessed extraordinary UFO encounters at nuclear weapons sites. Their amazing stories are presented here.

  8. Pectin as an Extraordinary Natural Kinetic Hydrate Inhibitor

    Science.gov (United States)

    Xu, Shurui; Fan, Shuanshi; Fang, Songtian; Lang, Xuemei; Wang, Yanhong; Chen, Jun

    2016-03-01

    Pectin as a novel natural kinetic hydrate inhibitor, expected to be eco-friendly and sufficiently biodegradable, was studied in this paper. The novel crystal growth inhibition (CGI) and standard induction time methods were used to evaluate its effect as hydrate inhibitor. It could successfully inhibit methane hydrate formation at subcooling temperature up to 12.5 °C and dramatically slowed the hydrate crystal growth. The dosage of pectin decreased by 66% and effective time extended 10 times than typical kinetic inhibitor. Besides, its maximum growth rate was no more than 2.0%/h, which was far less than 5.5%/h of growth rate for PVCap at the same dosage. The most prominent feature was that it totally inhibited methane hydrate crystal rapid growth when hydrate crystalline occurred. Moreover, in terms of typical natural inhibitors, the inhibition activity of pectin increased 10.0-fold in induction time and 2.5-fold in subcooling temperature. The extraordinary inhibition activity is closely related to its hydrogen bonding interaction with water molecules and the hydrophilic structure. Finally, the biodegradability and economical efficiency of pectin were also taken into consideration. The results showed the biodegradability improved 75.0% and the cost reduced by more than 73.3% compared to typical commercial kinetic inhibitors.

  9. Extraordinary experiences in its cultural and theoretical context.

    Science.gov (United States)

    von Lucadou, Walter; Wald, Franziska

    2014-06-01

    The growing complexity, opaqueness and specialization of many areas of life and - above all - a booming psychological and esoteric market create the necessity for counselling and advice for individuals who encounter so-called 'paranormal' experiences. These experiences are often interpreted as 'transpersonal' or 'spiritual', depending on the cultural background and religious traditions. The term 'spiritual crisis' has become a fashionable diagnosis with some transpersonal psychotherapists. Paranormal experiences, regardless of their acceptance of academic psychology and psychiatry, are still a taboo subject in society. The Parapsychological Counselling Office in Freiburg is a professional unit with governmental support, which helps individuals to cope with such experiences adequately. The work and responsibilities of the counselling centre are presented. A large collection of cases in the form of letters, which were sent in by individuals wanting to communicate their unusual or extraordinary experiences have been analysed. Some of the results are reported here. Finally, we discuss a special form of 'inexplicable experiences' based on a theoretical model. Its recommendations seem counter-intuitive but are ultimately successful. The model starts from a system-theoretical viewpoint and uses concepts such as complementarity and entanglement of generalized quantum theory (GQT) and the model of pragmatic information (MPI). Since it turned out that individuals who contact the counselling centre also offer their own interpretations and 'explanation', the question arises, how these resources can be used to help clients. PMID:24953151

  10. Extraordinary halocarbon emissions initiated by the 2011 Tohoku earthquake

    Science.gov (United States)

    Saito, Takuya; Fang, Xuekun; Stohl, Andreas; Yokouchi, Yoko; Zeng, Jiye; Fukuyama, Yukio; Mukai, Hitoshi

    2015-04-01

    The Tohoku earthquake of 11 March 2011, with moment magnitude Mw = 9.0, and subsequent tsunami caused catastrophic structural damage in east Japan. Using high-frequency atmospheric monitoring data, we show that emissions of halocarbons, potent greenhouse gases and stratospheric ozone-depleting substances, dramatically increased shortly after the earthquake and that annual emissions were significantly higher in 2011 than in other years. We estimate that the sum of earthquake-related emissions of the six studied halocarbon species (CFC-11, HCFC-22, HCFC-141b, HFC-134a, HFC-32, and SF6) was 6.6 (5.2-8.0) Gg, which is equivalent to ozone depletion potential-weighted emissions of 1.3 (1.1-1.6) Gg with a global warming potential equivalent to 19.2 (15.8-22.5) Tg of carbon dioxide. These extraordinary halocarbon emissions are likely due to destruction of building components containing halocarbons, such as air conditioners, foam insulation, and electrical equipment.

  11. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.

    2013-02-13

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device\\'s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.

  12. HCTISN - proceedings of the extraordinary meeting of July 16, 2008

    International Nuclear Information System (INIS)

    On July 7, 2008, the overflow of a storage tank of the Socatri facility at the Tricastin site (France) led to the spillage of a uraniferous solution on the ground. This incident was declared to the French nuclear safety authority (ASN) more than 8 hours after it took place. For this reason, the high committee for the nuclear safety transparency and information (HCTISN) organized an extraordinary meeting on July 16, 2008, in order to audition the different intervening parties in the management of this incident, to analyse its consequences and the remedial action carried out, the reasons why the incident was not declared in a shorter delay, and the dispositions taken by Socatri to ensure the transparency concerning this incident. This document is the proceedings of this meeting. It comprises a description made by Socatri of the course of the incident and a description of the characteristics of the effluent, a presentation of the action undertaken by the ASN after the declaration of the incident, a presentation of the action of the prefectorial authorities, and a presentation of the action carried out by the institute of radiation protection and nuclear safety (IRSN) in the framework of the management of the consequences of this event. In conclusion, the HCTISN has expressed his recommendations concerning the respect of the information procedure and the continuation of the environmental monitoring of the site. (J.S.)

  13. Diagnostic and therapeutic approaches after suspected or confirmed extraordinary exposure to ionizing radiation of members of the German Armed Forces

    International Nuclear Information System (INIS)

    This report refers to the results of 5 working packages. The first of them deals in detail with 11 extraordinary radiation accidents resulting in a chronic or protracted/intermittent radiation exposure. In most of the cases, the radiation etiology of observed health impairments was suspected many days, weeks or months after the beginning of accidental exposure. Therefore, in the second package, a review of results of systematic chronic radiation exposures in dogs, rats and mice was done to try to understand the pathophysiology of observations in man. The key problem lies in the day-by-day radiation effects on hemopoietic stem cells and their capability to cope with the radiation induced excess cell loss. On this basis, diagnostic approaches to assess the functional potentials of cell renewal are outlined in package 3. These considerations lead to therapeutic recommendations (package 4): in case of an irreversible damage to the stem cell pool, a stem cell transplantation may be the only way to induce recovery. In case of a reversible damage, the transient hemopoietic failure can be bridged by appropriate supportive measures to prevent infection or bleeding. The package 5 recommends to initiation of continuing medical education for the Armed Forces Medical Services to deal with this type of extraordinary radiation accidents which may occur in any 'out-of-area' - mission. (orig.)

  14. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.;

    2016-01-01

    doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show that...... very high activation rates. As for laser annealed Germanium, we studied in detail the amorphous to crystalline Ge phase transition as a function of the increasing LTA energy density and we found that using LTA, very high carrier concentrations (above 1020 cm-3) were achieved in As doped regions, which...

  15. Annealing of proton implanted tetragonal YBa 2Cu 3O 7- x

    Science.gov (United States)

    Katsuhiro, Yokota; Takeshi, Kura; Saichi, Katayama; Akiyoshi, Chayahara; Mamoru, Satho

    1991-07-01

    500 keV protons were implanted into sintered tetragonal YBa 2Cu 3O 7 - x (t-YBCO) with a dose of 1 × 10 17 cm -2. Implanted YBCO was annealed in oxygen at 300-800°C to induce a tetragonal-to-orthorhombic phase transformation. A superconducting transition of implanted YBCO annealed at 400°C for 240 min started at 98 K, higher than 91 K of unimplanted YBCO annealed at 400°C for 240 min. Annealing at 800°C changed again from superconducting orthorhombic YBCO to semiconducting tetragonal YBCO.

  16. The effect of annealing and desulfurization on oxide spallation of turbine airfoil material

    International Nuclear Information System (INIS)

    In this paper the authors report a study that addresses the sulfur-induced spallation theory. Previous work has shown that a high temperature anneal in hydrogen desulfurizes nickel-base alloys and greatly improves their resistance to oxide spallation. The authors will show that such an anneal can be applied successfully to a Ni-base airfoil material. Both Auger segregation experiments and chemical analyses show that this anneal desulfurizes the material, at least in the absence of yttrium. However, the results suggest that factors other than desulfurization may be contributing to the improvement in spallation resistance produced by the anneal

  17. Analysis of Trivium by a Simulated Annealing variant

    DEFF Research Database (Denmark)

    Borghoff, Julia; Knudsen, Lars Ramkilde; Matusiewicz, Krystian

    2010-01-01

    characteristic of equation systems that may be efficiently solvable by the means of such algorithms is provided. As an example, we investigate equation systems induced by the problem of recovering the internal state of the stream cipher Trivium. We propose an improved variant of the simulated annealing method...

  18. Thermal Annealing of Exfoliated Graphene

    Directory of Open Access Journals (Sweden)

    Wang Xueshen

    2013-01-01

    Full Text Available Monolayer graphene is obtained by mechanical exfoliation using scotch tapes. The effects of thermal annealing on the tape residues and edges of graphene are researched. Atomic force microscope images showed that almost all the residues could be removed in N2/H2 at 400°C but only agglomerated in vacuum. Raman spectra of the annealed graphene show both the 2D peak and G peak blueshift. The full width at half maximum (FWHM of the 2D peak becomes larger and the intensity ratio of the 2D peak to G peak decreases. The edges of graphene are completely attached to the surface of the substrate after annealing.

  19. DMPD: Gram-negative endotoxin: an extraordinary lipid with profound effects oneukaryotic signal transduction. [Dynamic Macrophage Pathway CSML Database

    Lifescience Database Archive (English)

    Full Text Available 1916089 Gram-negative endotoxin: an extraordinary lipid with profound effects oneuk...ep;5(12):2652-60. (.png) (.svg) (.html) (.csml) Show Gram-negative endotoxin: an extraordinary lipid with profound effects...tive endotoxin: an extraordinary lipid with profound effects oneukaryotic signal transduction. Authors Raetz

  20. Point defect annealing near voids

    International Nuclear Information System (INIS)

    Kinetic calculations were carried out for the annealing of vacancies and interstitials at voids under irradiation conditions. The case in which there is a small energy barrier between a defect and a void (such as might arise from strain effects or solute segregation at void surfaces) has been investigated in detail. With irradiation conditions which yield void swelling, it is found that a small barrier produces a significant bias parameter for preferential annealing. The bias parameter is relatively insensitive to temperature and irradiation rate, but varies with void radius, decreasing as the void size increases

  1. High efficient inverted polymer solar cells with different annealing treatment

    International Nuclear Information System (INIS)

    Inverted polymer solar cells (IPSCs) were fabricated with cesium carbonate (Cs2CO3) modified indium tin oxide (ITO) substrates as the electrode and molybdenum trioxide (MoO3) modified Al as the anode. The Cs2CO3 dissolved in 2-ethoxyethanol was spin-coated on ITO substrates, showing snowflake-like morphology characterized by the scanning electron microscope (SEM). The absorption, X-ray diffraction as well as the morphology of the active layer were measured before and after annealing treatment. The IPSCs with annealing treatments on the active layers and MoO3 layers exhibited the maximum power conversion efficiency (PCE) approaching to 2%, with open circuit voltage (Voc) of 0.57 V, short circuit current density (Jsc) of 8.8 mA/cm2 and fill factor (FF) of 38.7%. The performance of IPSCs was dramatically decreased by annealing treatment after the deposition of Al cathode, which may be due to the diffusion of Al atom crossing the MoO3 layer forming new channels for charge carrier collection. However, the new channels are not beneficial to the charge carrier collection, which is demonstrated from that the Jsc of IPSCs was evidently decreased from 8.8 to 4.6 mA/cm2 by annealing treatment after deposition Al layer. The annealing treatment after deposition of MoO3 could improve the interfacial contact to aid in electron extraction. Highlights: ► PCE of inverted polymer solar cells (IPSc) with Cs2Co3 modified ITO as cathode and MoO3/Al as anode is approaching to 2%. ► The snowflake-like morphology of Cs2CO3 was investigated by SEM. ► The annealing treatment before deposition Al layer has positive effect on improvement of IPSCs performance. ► EDX results directly demonstrate the vertical phase separation of P3HT:PCBM induced by annealing treatment.

  2. An Introduction to Simulated Annealing

    Science.gov (United States)

    Albright, Brian

    2007-01-01

    An attempt to model the physical process of annealing lead to the development of a type of combinatorial optimization algorithm that takes on the problem of getting trapped in a local minimum. The author presents a Microsoft Excel spreadsheet that illustrates how this works.

  3. Annealing properties of rice starch.

    Science.gov (United States)

    Thermal properties of starch can be modified by annealing, i.e., a pre-treatment in excessive amounts of water at temperatures below the gelatinization temperatures. This treatment is known to improve the crystalline properties, and is a useful tool to gain a better control of the functional proper...

  4. Manipulation of magnetic properties of glass-coated microwires by annealing

    International Nuclear Information System (INIS)

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect

  5. Manipulation of magnetic properties of glass-coated microwires by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Chichay, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Talaat, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); Rodionova, V. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); National University of Science and Technology (MISIS), 119049 Moscow (Russian Federation); Blanco, J.M. [Dpto. Física Aplicada, EUPDS Basque Country University UPV/EHU (Spain); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain)

    2015-06-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect.

  6. American Council of Education names Norrine Bailey Spencer an Extraordinary Woman

    OpenAIRE

    Harris, Jennifer

    2008-01-01

    Norrine Bailey Spencer, associate provost and director of undergraduate admissions at Virginia Tech, was selected to be one of the women profiled the American Council on Education's "35 Weeks of Extraordinary Women."

  7. Nanomechanical characteristics of annealed Si/SiGe superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ming-Jhang [Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Wen, Hua-Chiang, E-mail: a091316104@gmail.com [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Wu, Shyh-Chi [Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chung Shan Institute of Science and Technology, CSIST, Taoyuan 325, Taiwan (China); Yang, Ping-Feng; Lai, Yi-Shao [Central Labs, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, 811 Nantze, Kaohsiung, Taiwan (China); Hsu, Wen-Kuang [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Wu, Wen-Fa [National Nano Device Laboratories, Hsinchu 300, Taiwan (China); Chou, Chang-Pin [Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-08-15

    In this study, the nanomechanical damage was investigated on the annealed Si/SiGe strained-layer superlattices (SLSs) deposited using an ultrahigh-vacuum chemical vapor deposition (UHVCVD). Nanoscratch, nanoindenter, atomic force microscopy (AFM), and transmission electron microscopy (TEM) techniques were used to determine the nanomechanical behavior of the SiGe films. With a constant force applied, greater hardness number and larger coefficients of friction ({mu}) were observed on the samples that had been annealed at 600 {sup o}C, suggesting that annealing of the Si/SiGe SLSs can induce greater shear resistance. AFM morphological studies of the Si/SiGe SLSs revealed that pile-up phenomena occurred on both sides of each scratch, with the formation of some pellets and microparticles. The Si/SiGe SLSs that had been subjected to annealing under various conditions exhibited significantly different features in their indentation results. Indeed, the TEM images reveal slight dislocation propagation in the microstructures. Thus, the hardness and elastic modulus can be increased slightly after annealing treatment because the existence of comparatively unstable microstructures. It is suggested that cracking phenomena dominate the damage cause of Si/SiGe SLSs.

  8. An exploratory study into the effects of extraordinary nature on emotions, mood, and prosociality

    OpenAIRE

    Joye, Yannick; Bolderdijk, Jan Willem

    2015-01-01

    Environmental psychology research has demonstrated that exposure to mundane natural environments can be psychologically beneficial, and can, for instance, improve individuals' mood and concentration. However, little research has yet examined the psychological benefits of extraordinary, awe-evoking kinds of nature, such as spectacular mountain scenes or impressive waterfalls. In this study, we aimed to address the underrepresentation of such extraordinary nature in research on human—nature int...

  9. Extraordinary mode absorption at the electron cyclotron harmonic frequencies as a Tokamak plasma diagnostic

    International Nuclear Information System (INIS)

    Measurements of Extraordinary mode absorption at the electron cyclotron harmonic frequencies are of unique value in high temperature, high density Tokamak plasma diagnostic applications. An experimental study of Extraordinary mode absorption at the semi-opaque second and third harmonics has been performed on the ALCATOR C Tokamak. A narrow beam of submillimeter laser radiation was used to illuminate the plasma in a horizontal plane, providing a continuous measurement of the one-pass, quasi-perpendicular transmission

  10. Fabrication of dense B4C/CNF composites having extraordinary high strength and toughness at elevated temperatures

    International Nuclear Information System (INIS)

    Fully dense B4C/CNF composites have been fabricated from the mixture of amorphous fine powders of boron and carbon, and carbon nano-fiber (CNF) using pulsed electric-current pressure sintering (PECPS) at 2173 K (1900 °C) for 10 min under 30 MPa in a vacuum. They showed a moderate mechanical properties at room temperature: bending strength σb more than 450 MPa, Vickers hardness Hv of 29–36 GPa, and fracture toughness KIC ranging from 4.1 to 5.7 MPa m1/2. However, they revealed extraordinary high strength more than 600 MPa at 1673–1873 K (1400–1600 °C) in an inert gas atmosphere, especially, σb of 830 MPa at 1773 K (1500 °C) (12.5 vol% CNF added composite) and σb of 800 MPa at 1873 K (1600 °C) (10.0 vol% CNF added composite). In addition, these B4C/CNF composites also showed much improved high-temperature fracture toughness by a factor of around 20, in comparison with monolithic B4C ceramics at 1773 K (1500 °C). These extraordinary both high strength and toughness might be explained in terms of the suppression of grain growth by CNF at elevated temperatures, an inverse strength temperature-dependence for carbides, and anchor effect induced by CNF

  11. Ensemble annealing of complex physical systems

    CERN Document Server

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is that they require a temperature schedule. Choosing well-balanced temperature schedules can be tedious and time-consuming. Imbalanced schedules can have a negative impact on the convergence, runtime and success of annealing algorithms. This article outlines a unifying framework, ensemble annealing, that combines ideas from simulated annealing, histogram reweighting and nested sampling with concepts in thermodynamic control. Ensemble annealing simultaneously simulates a physical system and estimates its density of states. The...

  12. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  13. Residual Energies after Slow Quantum Annealing

    OpenAIRE

    Suzuki, Sei; Okada, Masato

    2005-01-01

    Features of the residual energy after the quantum annealing are investigated. The quantum annealing method exploits quantum fluctuations to search the ground state of classical disordered Hamiltonian. If the quantum fluctuation is reduced sufficiently slowly and linearly by the time, the residual energy after the quantum annealing falls as the inverse square of the annealing time. We show this feature of the residual energy by numerical calculations for small-sized systems and derive it on th...

  14. Hybrid Quantum Annealing for Clustering Problems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo; Sato, Issei; Kurihara, Kenichi

    2011-01-01

    We develop a hybrid type of quantum annealing in which we control temperature and quantum field simultaneously. We study the efficiency of proposed quantum annealing and find a good schedule of changing thermal fluctuation and quantum fluctuation. In this paper, we focus on clustering problems which are important topics in information science and engineering. We obtain the better solution of the clustering problem than the standard simulated annealing by proposed quantum annealing.

  15. Quantum annealing: An introduction and new developments

    OpenAIRE

    Ohzeki, Masayuki; Nishimori, Hidetoshi

    2010-01-01

    Quantum annealing is a generic algorithm using quantum-mechanical fluctuations to search for the solution of an optimization problem. The present paper first reviews the fundamentals of quantum annealing and then reports on preliminary results for an alternative method. The review part includes the relationship of quantum annealing with classical simulated annealing. We next propose a novel quantum algorithm which might be available for hard optimization problems by using a classical-quantum ...

  16. Ensemble annealing of complex physical systems

    OpenAIRE

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

  17. Formation and annealing of radiation damage in boron ion implanted MOS structures

    International Nuclear Information System (INIS)

    Processes of accumulation of defects induced by radiation and annealing characteristics of 1.25 x 1012 cm-2 boron implanted MOS structures are investigated at implantation energy varied from 30 to 125 keV. Parameters of centres formed under these conditions at the SiO2-Si interface and in a thin surface region of silicon are determined by the method of thermally stimulated charge release. The anneal temperatures required to remove some types of defects are established. The dielectric-semiconductor interface is shown to affect significantly the anneal processes of traps induced by implantation. (author)

  18. Quantum Annealing for Variational Bayes Inference

    OpenAIRE

    Sato, Issei; Kurihara, Kenichi; Tanaka, Shu; Nakagawa, Hiroshi; Miyashita, Seiji

    2014-01-01

    This paper presents studies on a deterministic annealing algorithm based on quantum annealing for variational Bayes (QAVB) inference, which can be seen as an extension of the simulated annealing for variational Bayes (SAVB) inference. QAVB is as easy as SAVB to implement. Experiments revealed QAVB finds a better local optimum than SAVB in terms of the variational free energy in latent Dirichlet allocation (LDA).

  19. Non-Hermitian Quantum Annealing and Superradiance

    CERN Document Server

    Nesterov, Alexander I; de la Cruz, Fermín Aceves; Zepeda, Juan Carlos Beas

    2015-01-01

    We consider the non-Hermitian quantum annealing for the one-dimentional Ising spin chain, and for a large number of qubits. We show that the annealing time is significanly reduced for the non-Hermitian algorithm in comparison with the Hermitian one. We also demonstrtate the relation of the non-Hermitian quantum annealing with the superadiance transition in this system.

  20. Theory of radiation disordering and annealing semiconductors

    International Nuclear Information System (INIS)

    A new model of radiation disordering semiconductors is proposed. According to this model disordering clusters capable to the self-annealing are stabilized by autolocalized electronic excitations (electrons, holes, excitons). Impulse annealing this medium takes place if the electron stoppers are annihilated and so the disordered clusters are resolved. This model is in accordance with experimental data of amorphization and impulse annealing. (author)

  1. Feasibility of Simulated Annealing Tomography

    CERN Document Server

    Vo, Nghia T; Moser, Herbert O

    2014-01-01

    Simulated annealing tomography (SAT) is a simple iterative image reconstruction technique which can yield a superior reconstruction compared with filtered back-projection (FBP). However, the very high computational cost of iteratively calculating discrete Radon transform (DRT) has limited the feasibility of this technique. In this paper, we propose an approach based on the pre-calculated intersection lengths array (PILA) which helps to remove the step of computing DRT in the simulated annealing procedure and speed up SAT by over 300 times. The enhancement of convergence speed of the reconstruction process using the best of multiple-estimate (BoME) strategy is introduced. The performance of SAT under different conditions and in comparison with other methods is demonstrated by numerical experiments.

  2. Recursive simulation of quantum annealing

    CERN Document Server

    Sowa, A P; Samson, J H; Savel'ev, S E; Zagoskin, A M; Heidel, S; Zúñiga-Anaya, J C

    2015-01-01

    The evaluation of the performance of adiabatic annealers is hindered by lack of efficient algorithms for simulating their behaviour. We exploit the analyticity of the standard model for the adiabatic quantum process to develop an efficient recursive method for its numerical simulation in case of both unitary and non-unitary evolution. Numerical simulations show distinctly different distributions for the most important figure of merit of adiabatic quantum computing --- the success probability --- in these two cases.

  3. Recursive simulation of quantum annealing

    International Nuclear Information System (INIS)

    The evaluation of the performance of adiabatic annealers is hindered by the lack of efficient algorithms for simulating their behaviour. We exploit the analyticity of the standard model for the adiabatic quantum process to develop an efficient recursive method for its numerical simulation in case of both unitary and non-unitary evolution. Numerical simulations show distinctly different distributions for the most important figure of merit of adiabatic quantum computing—the success probability—in these two cases. (paper)

  4. Computational algorithm for molybdenite concentrate annealing

    International Nuclear Information System (INIS)

    Computational algorithm is presented for annealing of molybdenite concentrate with granulated return dust and that of granulated molybdenite concentrate. The algorithm differs from the known analogies for sulphide raw material annealing by including the calculation of return dust mass in stationary annealing; the latter quantity varies form the return dust mass value obtained in the first iteration step. Masses of solid products are determined by distribution of concentrate annealing products, including return dust and benthonite. The algorithm is applied to computations for annealing of other sulphide materials. 3 refs

  5. Very Fast Simulated Re-Annealing

    OpenAIRE

    Ingber, Lester

    1989-01-01

    Draft An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ‘‘temperature’’ T decreasing exponentially in annealing-time k, T = T0 exp(−ck1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multidimensional parameter-space. This annealing schedule is faster than fast Cauchy annealing, ...

  6. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 12000C and boron up to 9500C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 10500C. (U.K.)

  7. Quantum Annealing for Constrained Optimization

    Science.gov (United States)

    Hen, Itay; Spedalieri, Federico M.

    2016-03-01

    Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealers that promise to solve certain combinatorial optimization problems of practical relevance faster than their classical analogues. The applicability of such devices for many theoretical and real-world optimization problems, which are often constrained, is severely limited by the sparse, rigid layout of the devices' quantum bits. Traditionally, constraints are addressed by the addition of penalty terms to the Hamiltonian of the problem, which, in turn, requires prohibitively increasing physical resources while also restricting the dynamical range of the interactions. Here, we propose a method for encoding constrained optimization problems on quantum annealers that eliminates the need for penalty terms and thereby reduces the number of required couplers and removes the need for minor embedding, greatly reducing the number of required physical qubits. We argue the advantages of the proposed technique and illustrate its effectiveness. We conclude by discussing the experimental feasibility of the suggested method as well as its potential to appreciably reduce the resource requirements for implementing optimization problems on quantum annealers and its significance in the field of quantum computing.

  8. Grain growth of gold nanowires through laser zone annealing and rapid thermal annealing

    Science.gov (United States)

    Kim, Jung Yun

    The grain boundary density in metals plays an increasingly important role as structures are shrinking down to dimensions comparable to the electronic mean free path. Metal nanowires prepared through electron beam lithography, electrodeposition and many other methods are nanocrystalline with an average grain diameter in the range of 2--50 nm. For these nanocrystalline metal nanowires with a lateral dimensions larger than the mean grain diameter, the electrical resistance is dominated by electron scattering at the grain boundaries as opposed to the external surfaces and the background. The deleterious effect of grain boundaries on the electrical properties provides strong motivation to develop post-processing methods for increasing the mean grain diameter. Thermal annealing has typically been used to induce grain growth. However, for metal nanowires patterned on a planar surface, a classic Rayleigh instability is observed resulting in decomposition of the nanowire to a periodic series of nanoparticles. In principle, grain growth requires short range motion of atoms while shape change requires mass displacement across large distances. Laser zone annealing was used to test whether the latter could be suppressed by rapidly heating a highly localized section of the wire followed by rapidly cooling. A piezoelectric motor was used to translate the wire at nanoscale steps over a 532 nm confocal laser source at range of power levels (2.5--10 mW) and translation rates (7--128 nm/s). Annealing at a laser power of 10 mW resulted in grain growth of nearly 300% from 27 nm to 85 nm. A second approach to inhibit shape change while allowing for grain growth was to encapsulate the nanowire with an alumina layer to constrict large scale atomic diffusion during isothermal annealing. The alumina coating maintained the shape of the nanowire up to a temperature of ˜669 K and grain growth approaching the limiting size was observed. To study the grain growth kinetics, in situ electrical

  9. Annealing study of poly(etheretherketone)

    Science.gov (United States)

    Cebe, Peggy

    1988-01-01

    Annealing of PEEK has been studied for two materials cold-crystallized from the rubbery amorphous state. The first material is a low molecular weight PEEK; the second is commercially available neat resin. Differential scanning calorimetry was used to monitor the melting behavior of annealed samples. The effect of thermal history on melting behavior is very complex and depends upon annealing temperature, residence time at the annealing temperature, and subsequent scanning rate. Thermal stability of both materials is improved by annealing, and for an annealing temperature near the melting point, the polymer can be stabilized against reorganization during the scan. Variations of density, degree of crystallinity, and X-ray long period were studied as a function of annealing temperature for the commercial material.

  10. Recursive Branching Simulated Annealing Algorithm

    Science.gov (United States)

    Bolcar, Matthew; Smith, J. Scott; Aronstein, David

    2012-01-01

    This innovation is a variation of a simulated-annealing optimization algorithm that uses a recursive-branching structure to parallelize the search of a parameter space for the globally optimal solution to an objective. The algorithm has been demonstrated to be more effective at searching a parameter space than traditional simulated-annealing methods for a particular problem of interest, and it can readily be applied to a wide variety of optimization problems, including those with a parameter space having both discrete-value parameters (combinatorial) and continuous-variable parameters. It can take the place of a conventional simulated- annealing, Monte-Carlo, or random- walk algorithm. In a conventional simulated-annealing (SA) algorithm, a starting configuration is randomly selected within the parameter space. The algorithm randomly selects another configuration from the parameter space and evaluates the objective function for that configuration. If the objective function value is better than the previous value, the new configuration is adopted as the new point of interest in the parameter space. If the objective function value is worse than the previous value, the new configuration may be adopted, with a probability determined by a temperature parameter, used in analogy to annealing in metals. As the optimization continues, the region of the parameter space from which new configurations can be selected shrinks, and in conjunction with lowering the annealing temperature (and thus lowering the probability for adopting configurations in parameter space with worse objective functions), the algorithm can converge on the globally optimal configuration. The Recursive Branching Simulated Annealing (RBSA) algorithm shares some features with the SA algorithm, notably including the basic principles that a starting configuration is randomly selected from within the parameter space, the algorithm tests other configurations with the goal of finding the globally optimal

  11. Annealing results on low-energy proton-irradiated GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; O'Meara, L.

    1988-01-01

    AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

  12. Thermal annealing, irradiation, and stress in multilayers

    International Nuclear Information System (INIS)

    The evolution of the microstructure of a TiN/B-C-N multilayered thin film during thermal annealing and irradiation has been studied by low angle X-ray diffraction and transmission electron microscopy. Stress has been determined by curvature measurements. After deposition, TiN is crystalline while B-C-N is amorphous. Thermal anneals in vacuum at 600-1000 deg. C lead to an increase of the bilayer repeat length and to a phase separation at the interfaces. After the 600 deg. C annealing, ion irradiation (Ar ions, 300 keV 1x1015 ions/cm2) causes an additional increase of the bilayer repeat length but a decrease of the quality of the interface. After annealing at 800 deg. C or 1000 deg. C, the irradiation causes a major decrease of the bilayer repeat length (more than 20% after annealing at 1000 deg. C and irradiation). The stress is highly compressive after deposition (σ=-2000 MPa). After the 600 deg. C annealing, the stress is totally relaxed (σ=0) and becomes tensile after annealing at higher temperatures (σ=+1200 MPa after 800 deg. C annealing, σ=+1500 MPa after 1000 deg. C annealing). TEM confirms the decrease of the bilayer repeat length after an irradiation of the samples subjected to high temperature anneal and reveal an increase of the roughness of the interfaces. These phenomena are discussed in terms of stress driven diffusion during irradiation

  13. Magnetism of CoFe2O4 thin films annealed under the magnetic field

    International Nuclear Information System (INIS)

    Polycrystalline CoFe2O4 thin films were deposited on Si (100) substrates by chemical solution deposition with and without magnetic annealing. Magnetic field directions were applied parallel and perpendicular to the film surface during the magnetic annealing process. The variations of strain, microstructure and magnetic anisotropy of the films caused by the magnetic annealing are investigated. The results show that the film densification is promoted and grain morphology is changed by the magnetic annealing, which can be attributed to the promoting effect of magnetization force on the grain growing and grain boundary diffusing. Magnetic measurements indicate the enhancement of anisotropy and saturation magnetizations of the polycrystalline CoFe2O4 after magnetic annealing. Furthermore, the rotation of easy axis along the field direction, the increased occupation of Co2+ ions at B sites and the additional strain induced by the magnetic field are considered as the main reasons of the increased magnetic anisotropy. - Highlights: • CFO films were annealed in magnetic field with parallel and vertical directions. • The film densification and grain size were changed by the applied magnetic field. • A higher saturation magnetization is obtained under magnetic annealing. • The enhanced magnetic anisotropy is observed after magnetic annealing

  14. Enhancement of exchange coupling and hard magnetic properties in nanocomposites by magnetic annealing

    International Nuclear Information System (INIS)

    An enhancement of the exchange coupling and hard magnetic properties of melt-spun Nd2Fe14B/α-Fe-type nanocomposites was achieved by optimization of their nanostructured morphology via magnetic annealing. Compared with the Nd2.4Pr5.6Dy1Fe84Mo1B6 sample annealed without a magnetic field, the magnetic annealing results in a noticeable improvement in the coercivity i H c, the remanence 4πMr, and energy product (BH)max. (BH)max at 50 K was enhanced by 43.7% after magnetic annealing in a field of 19 T. The kink in the demagnetization curve disappeared and, additionally, a much better squareness of the demagnetization curves was observed in the magnetically annealed samples. The intergrain exchange coupling was evaluated by Henkel plots. Evidence for stronger intergrain exchange coupling was found in the magnetically annealed sample, which is due to nanostructure refinement promoted by the magnetic annealing. The nanostructure refinement was confirmed by X-ray diffraction, transmission electron microscope, low-temperature demagnetization curves and a modified Brown's equation analysis. The improvement of hard magnetic properties of the magnetically annealed sample results mainly from the magnetic-field-induced exchange-coupling enhancement

  15. Sensitivity enhancement using annealed polymer optical-fibre-based sensors for pressure sensing applications

    Science.gov (United States)

    Pospori, A.; Marques, C. A. F.; Sáez-Rodríguez, D.; Nielsen, K.; Bang, O.; Webb, D. J.

    2016-05-01

    Thermal annealing can be used to induce a permanent negative Bragg wavelength shift for polymer fibre grating sensors and it was originally used for multiplexing purposes. Recently, researchers showed that annealing can also provide additional benefits, such as strain and humidity sensitivity enhancement and augmented temperature operational range. The annealing process can change both the optical and mechanical properties of the fibre. In this paper, the annealing effects on the stress and force sensitivities of PMMA fibre Bragg grating sensors are investigated. The incentive for that investigation was an unexpected behaviour observed in an array of sensors which were used for liquid level monitoring. One sensor exhibited much lower pressure sensitivity and that was the only one that was not annealed. To further investigate the phenomenon, additional sensors were photo-inscribed and characterised with regard their stress and force sensitivities. Then, the fibres were annealed by placing them in hot water, controlling with that way the humidity factor. After annealing, stress and force sensitivities were measured again. The results show that the annealing can improve the stress and force sensitivity of the devices. This can provide better performing sensors for use in stress, force and pressure sensing applications.

  16. Separated spin evolution quantum hydrodynamics of degenerated electrons with spin-orbit interaction and extraordinary wave spectrum

    OpenAIRE

    Andreev, Pavel A.; Trukhanova, Mariya Iv.

    2016-01-01

    To consider a contribution of the spin-orbit interaction in the extraordinary wave spectrum we derive a generalization of the separate spin evolution quantum hydrodynamics. Applying corresponding nonlinear Pauli equation we include Fermi spin current contribution in the spin evolution. We find that the spectrum of extraordinary waves consists of three branches: two of them are well-known extraordinary waves and the third one is the spin-electron acoustic wave (SEAW). Earlier SEAWs have been c...

  17. Picosecond laser annealing of silicon

    International Nuclear Information System (INIS)

    The existing literature is reviewed and new results are presented on the regrowth of silicon surfaces, either virgin or amorphized by ion-implantation, following irradiation by picosecond laser pulses. The importance of melt depth, quench rate and the nature of the initial a-Si surface as revealed by cross-section TEM are emphasized in order to explain the unique halo patterns observed optically. A search for plasma annealing phenomena, as well as evidence for the buried molten layer proposed by other authors, both proved negative. (author)

  18. Loviisa Unit One: Annealing - healing

    Energy Technology Data Exchange (ETDEWEB)

    Kohopaeae, J.; Virsu, R. [ed.; Henriksson, A. [ed.

    1997-11-01

    Unit 1 of the Loviisa nuclear powerplant was annealed in connection with the refuelling outage in the summer of 1996. This type of heat treatment restored the toughness properties of the pressure vessel weld, which had been embrittled be neutron radiation, so that it is almost equivalent to a new weld. The treatment itself was an ordinary metallurgical procedure that took only a few days. But the material studies that preceded it began over fifteen years ago and have put IVO at the forefront of world-wide expertise in the area of radiation embrittlement

  19. The Legal Framework Of Human Rights Crime As An Extraordinary Crime

    Directory of Open Access Journals (Sweden)

    Dedy Siswadi

    2015-08-01

    Full Text Available Abstract This research reviews the legal framework of human rights crime as an extraordinary crime as an approach in the settlement of criminal cases. The outcomes of the research indicate that modern human rights law developed out of customs and theories that established the rights of the individual in relation to the state. Disagreements regarding human rights violations which can only be done by the state and its agents or can also be done by non-government units still exist at the moment. As it turns out in practice however it has certain weaknesses particularly in legislation concerning serious crimes of human rights both as ius constituendum and ius constitutum still needs to be improved especially in the implementation of human rights on judiciary system. Therefore serious crimes against human rights are included as an extraordinary crime. The handling of the cases was incredible and special has become a logical consequence to be included as an extraordinary crime.

  20. Laser annealing of amorphous carbon films

    International Nuclear Information System (INIS)

    Amorphous (a-C) Carbon thin films were deposited, using pulsed laser deposition (PLD) with a Nd:YAG laser (1064 nm, 7 ns), from a pyrolytic graphite target, on silicon and refractory metal (Mo) substrates to a film thickness of 55, 400 and 500 nm. Samples were grown at RT and then annealed by a laser annealing technique, to reduce residual stress and induce a locally confined 'graphitization' process. The films were exposed to irradiation, in vacuum, by a Nd:YAG pulsed laser, operating at different wavelengths (VIS, N-UV) and increasing values of energy from 6-100 mJ/pulse. The thinner films were completely destroyed by N-UV laser treatment also at lower energies, owing to the almost direct propagation of heat to the Si substrate with melting and ruinous blistering effects. For thicker films the Raman micro-analysis evidenced the influence of laser treatments on the sp3/sp2 content evolution, and established the formation of aromatic nano-structures of average dimension 4.1-4.7 nm (derived from the ID/IG peak ratio), at fluence values round 50 mJ/cm2 for N-UV and 165 mJ/cm2 for VIS laser irradiation. Higher fluences were not suitable for a-Carbon 'graphitization', since a strong ablation process was the prominent effect of irradiation. Grazing incidence XRD (GI-XRD) used to evaluate the dimension and texturing of nano-particles confirmed the findings of Raman analysis. The effects of irradiation on surface morphology were studied by SEM analysis

  1. Pulsed laser annealing of Be-implanted GaN

    International Nuclear Information System (INIS)

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well

  2. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n+-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 1016 cm-2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  3. Reverse annealing of boron doped polycrystalline silicon

    International Nuclear Information System (INIS)

    Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-laser-crystallization (ELC) after B+ ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 oC and 650 oC. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency

  4. Reverse annealing of boron doped polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Beop-Jong; Hong, Won-Eui [Department of Materials Science and Engineering, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Deok Hoi; Uemoto, Tstomu; Kim, Chi Woo [LTPS Team, AMLCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do, 449-711 (Korea, Republic of); Ro, Jae-Sang [Department of Materials Science and Engineering, Hongik University, Seoul, 121-791 (Korea, Republic of)], E-mail: jsang@wow.hongik.ac.kr

    2008-07-31

    Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-laser-crystallization (ELC) after B{sup +} ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 {sup o}C and 650 {sup o}C. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency.

  5. Extraordinary Transmission in the UV Range from Sub-wavelength Slits on Semiconductors

    CERN Document Server

    Vincenti, M A; Akozbek, N; Buncick, M; Bloemer, M J; Scalora, M

    2009-01-01

    In this paper we describe a way to achieve the extraordinary transmission regime from sub-wavelength slits carved on semiconductor substrates. Unlike metals, the dielectric permittivity of typical semiconductors like GaAs or GaP is negative beginning in the extreme UV range (lambda <= 270nm). We show that the metal-like response of bulk semiconductors exhibits surface plasmon waves that lead to extraordinary transmission in the UV and soft X-ray ranges. The importance of realistic material response versus perfect conductors is also discussed. These findings may be important in high resolution photo-lithography, near field optical devices and ultra high density optical storage.

  6. Keystream Generator Based On Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Ayad A. Abdulsalam

    2011-01-01

    Full Text Available Advances in the design of keystream generator using heuristic techniques are reported. A simulated annealing algorithm for generating random keystream with large complexity is presented. Simulated annealing technique is adapted to locate these requirements. The definitions for some cryptographic properties are generalized, providing a measure suitable for use as an objective function in a simulated annealing algorithm, seeking randomness that satisfy both correlation immunity and the large linear complexity. Results are presented demonstrating the effectiveness of the method.

  7. Simulated Annealing using Hybrid Monte Carlo

    OpenAIRE

    Salazar, Rafael; Toral, Raúl

    1997-01-01

    We propose a variant of the simulated annealing method for optimization in the multivariate analysis of differentiable functions. The method uses global actualizations via the hybrid Monte Carlo algorithm in their generalized version for the proposal of new configurations. We show how this choice can improve upon the performance of simulated annealing methods (mainly when the number of variables is large) by allowing a more effective searching scheme and a faster annealing schedule.

  8. NEW SIMULATED ANNEALING ALGORITHMS FOR CONSTRAINED OPTIMIZATION

    OpenAIRE

    LINET ÖZDAMAR; CHANDRA SEKHAR PEDAMALLU

    2010-01-01

    We propose a Population based dual-sequence Non-Penalty Annealing algorithm (PNPA) for solving the general nonlinear constrained optimization problem. The PNPA maintains a population of solutions that are intermixed by crossover to supply a new starting solution for simulated annealing throughout the search. Every time the search gets stuck at a local optimum, this crossover procedure is triggered and simulated annealing search re-starts from a new subspace. In both the crossover and simulate...

  9. Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different time, then FTIR and optical microscope were used to study the behavior of oxygen. It is found that [Oi] increase at the early stage then decrease along with the increasing of anneal time. High density induced-defects can be found in the cleavage plane. By comparing NCZ-Si with Czochralski silicon (CZ-Si), [Oi] in NCZ-Si decrease more after anneal 24 h.

  10. Electron-irradiation enhanced photoluminescence from GaInNAs/GaAs quantum wells subject to thermal annealing

    International Nuclear Information System (INIS)

    Electron irradiation of a 1.3-μm-GaInNAs/GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the irradiated sample also causes a small additional spectral blueshift and reduces alloy potential energy fluctuations at the conduction band minimum. These irradiation-related phenomena are accompanied by small but discernable changes in x-ray diffraction features upon annealing, which indicate compositional and/or structural changes in the quantum wells

  11. Extended defects in hydrogen-implanted (111) silicon wafer treated by high temperature annealing process

    Institute of Scientific and Technical Information of China (English)

    XIAO Qinghua; TU Hailing

    2004-01-01

    High resolution transmission electron microscopy (HRTEM) has been used to investigate the extended defects induced by the interaction between hydrogen and silicon during the high temperature annealing process in the hydrogen-implanted (111) silicon wafer. It has been found that the high temperature annealing process, like the low temperature annealing process, leads to the formation of cracks. However, beneath the cracks induced by high temperature annealing, there appear many additional dislocations. Some amorphous bands have also been observed. In addition, a string of cavities, which are truncated octahedral in shape and surrounded by {111} and {100 } lattice planes, have been revealed. These cavities, some of which have amorphous inner walls, are arrayed parallel to the top surface. Between cavities, there normally appears a dislocation band.

  12. Rapid Annealing Of Amorphous Hydrogenated Carbon

    Science.gov (United States)

    Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

    1989-01-01

    Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.

  13. Classical Simulated Annealing Using Quantum Analogues

    Science.gov (United States)

    La Cour, Brian R.; Troupe, James E.; Mark, Hans M.

    2016-06-01

    In this paper we consider the use of certain classical analogues to quantum tunneling behavior to improve the performance of simulated annealing on a discrete spin system of the general Ising form. Specifically, we consider the use of multiple simultaneous spin flips at each annealing step as an analogue to quantum spin coherence as well as modifications of the Boltzmann acceptance probability to mimic quantum tunneling. We find that the use of multiple spin flips can indeed be advantageous under certain annealing schedules, but only for long anneal times.

  14. Classical Simulated Annealing Using Quantum Analogues

    Science.gov (United States)

    La Cour, Brian R.; Troupe, James E.; Mark, Hans M.

    2016-08-01

    In this paper we consider the use of certain classical analogues to quantum tunneling behavior to improve the performance of simulated annealing on a discrete spin system of the general Ising form. Specifically, we consider the use of multiple simultaneous spin flips at each annealing step as an analogue to quantum spin coherence as well as modifications of the Boltzmann acceptance probability to mimic quantum tunneling. We find that the use of multiple spin flips can indeed be advantageous under certain annealing schedules, but only for long anneal times.

  15. DOE`s annealing prototype demonstration projects

    Energy Technology Data Exchange (ETDEWEB)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-02-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy`s Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana`s Marble Hill nuclear power plant. The MPR team`s annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company`s nuclear power plant at Midland, Michigan. This paper describes the Department`s annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges.

  16. Chad – Dakar: Extraordinary Habré trial is litmus test for Pan-African justice

    NARCIS (Netherlands)

    Bouwknegt, Thijs

    2015-01-01

    From 20 July onwards, Chad’s previous despot, Hissène Habré, will be in the dock on charges of crimes against humanity, torture and war crimes before the Extraordinary African Chambers (EAC) in the Senegalese court system. His trial will be Africa’s first to proceed to trial under the guise of unive

  17. MegaOhm extraordinary Hall effect in oxidized CoFeB

    Science.gov (United States)

    Kopnov, G.; Gerber, A.

    2016-07-01

    We report on the development of controllably oxidized CoFeB ferromagnetic films demonstrating the extraordinary Hall effect (EHE) resistivity exceeding 1 Ω cm and magnetic field sensitivity up to 106 Ω/T. Such EHE resistivity is four orders of magnitude higher than that previously observed in ferromagnetic materials, while sensitivity is two orders larger than the best of semiconductors.

  18. An Unusual Case of Pulmonary Adenocarcinoma with Multiple and Extraordinary Metastases

    International Nuclear Information System (INIS)

    Pulmonary adenocarcinoma is one of the major types of lung cancers in which metastasis is not uncommon. Hereby, we report a case of pulmonary adenocarcinoma with multiple muscular, cutaneous, pancreatic and peritoneal metastases. Actually, all these features occurring in one patient makes it an extraordinary case. A rare anatomic variation, double inferior vena cava (IVCs), was another rare manifestation in this case

  19. Extraordinary Measures: Drone Warfare, Securitization, and the “War on Terror”

    Directory of Open Access Journals (Sweden)

    Romaniuk Scott Nicholas

    2015-07-01

    Full Text Available The use of unmanned aerial vehicles or “drones,” as part of the United States’ (US targeted killing (TK program dramatically increased after the War on Terror (WoT was declared. With the ambiguous nature and parameters of the WoT, and stemming from the postulation of numerous low-level, niche-, and other securitizations producing a monolithic threat, US drone operations now constitute a vital stitch in the extensive fabric of US counterterrorism policy. This article employs the theories of securitization and macrosecuritization as discussed by Buzan (1991, 2006, and Buzan and Wæver (2009 to understand targeted killing, by means of weaponized drones, as an extraordinary measure according to the Copenhagen School’s interpretation. An overarching securitization and the use of the “security” label warrants the emergency action of targeted killing through the use of drones as an extraordinary measure. We argue that the WoT serves as a means of securitizing global terrorism as a threat significant enough to warrant the use of drone warfare as an extraordinary use of force. By accepting the WoT as a securitization process we can reasonably accept that the US’ response(s against that threat are also securitized and therefore become extraordinary measures.

  20. Annealing Reduces Free Volumes In Thermoplastics

    Science.gov (United States)

    Singh, Jag J.; St. Clair, Terry L.

    1988-01-01

    Investigation conducted to determine free volumes and water-absorption characteristics of two types of thermoplastic polymide as functions of annealing histories. Reductions reach asymptotic values after several annealing cycles. High-temperature thermoplastics excellent candidates for use in aerospace applications. Graphite-fiber composites containing thermoplastic matrices have wide applicability.

  1. Radiation annealing of gallium arsenide implanted with sulphur

    CERN Document Server

    Ardyshev, V M

    2002-01-01

    Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

  2. Extraordinary metastabilities in a magnetic two-dimensional hole systems

    International Nuclear Information System (INIS)

    Magnetotransport experiments on inverted manganese modulation doped compressively strained InAs quantum well structures reveal strong localization effects in coexistence with typical quantized transport phenomena in a two-dimensional charge carrier system. Here, manganese plays a dual role: it acts as an acceptor and additionally provides a localized spin of 5/2. Peculiarities of the MBE growth lead to a broadening of the doping layer resulting in a certain amount of Mn inside the channel hosting the two-dimensional holes. This phenomenon causes a hysteretic magnetic field driven metal to insulator transition with abrupt resistance changes over several orders of magnitude. The novel metastable insulator phase is a non-polarized state and originates from a large magnetic anisotropy of the heavy holes, coupled to the parent Mn acceptors by strong p-d exchange interaction. As a result, the spin relaxation of individual bound holes is remarkably enhanced and exceeds several hundreds of seconds. The influences on field-induced delocalization and extended relaxation of the holes are discussed.

  3. Extraordinary molecular evolution in the PRDM9 fertility gene.

    Directory of Open Access Journals (Sweden)

    James H Thomas

    Full Text Available Recent work indicates that allelic incompatibility in the mouse PRDM9 (Meisetz gene can cause hybrid male sterility, contributing to genetic isolation and potentially speciation. The only phenotype of mouse PRDM9 knockouts is a meiosis I block that causes sterility in both sexes. The PRDM9 gene encodes a protein with histone H3(K4 trimethyltransferase activity, a KRAB domain, and a DNA-binding domain consisting of multiple tandem C2H2 zinc finger (ZF domains. We have analyzed human coding polymorphism and interspecies evolutionary changes in the PRDM9 gene. The ZF domains of PRDM9 are evolving very rapidly, with compelling evidence of positive selection in primates. Positively selected amino acids are predominantly those known to make nucleotide specific contacts in C2H2 zinc fingers. These results suggest that PRDM9 is subject to recurrent selection to change DNA-binding specificity. The human PRDM9 protein is highly polymorphic in its ZF domains and nearly all polymorphisms affect the same nucleotide contact residues that are subject to positive selection. ZF domain nucleotide sequences are strongly homogenized within species, indicating that interfinger recombination contributes to their evolution. PRDM9 has previously been assumed to be a transcription factor required to induce meiosis specific genes, a role that is inconsistent with its molecular evolution. We suggest instead that PRDM9 is involved in some aspect of centromere segregation conflict and that rapidly evolving centromeric DNA drives changes in PRDM9 DNA-binding domains.

  4. Separated spin evolution quantum hydrodynamics of degenerated electrons with spin-orbit interaction and extraordinary wave spectrum

    CERN Document Server

    Andreev, Pavel A

    2016-01-01

    To consider a contribution of the spin-orbit interaction in the extraordinary wave spectrum we derive a generalization of the separate spin evolution quantum hydrodynamics. Applying corresponding nonlinear Pauli equation we include Fermi spin current contribution in the spin evolution. We find that the spectrum of extraordinary waves consists of three branches: two of them are well-known extraordinary waves and the third one is the spin-electron acoustic wave (SEAW). Earlier SEAWs have been considered in the electrostatic limit. Here we include the electromagnetic effects in their spectrum at the propagation perpendicular to the external magnetic field. We find that the SEAW spectrum considerably changes at the account of transverse part of electric field. We obtain that the separate spin evolution modifies spectrum of the well-known extraordinary waves either. A change of the extraordinary wave spectrum due to the spin-orbit interaction is obtained as well.

  5. Microstructural evolution and pitting resistance of annealed lean duplex stainless steel UNS S32304

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Ziying [Department of Materials Science, Fudan University, Shanghai 200433 (China); Key Laboratory of Ecophysics, Department of Physics, Shihezi University, Shihezi 832003 (China); Xinjiang Laboratory of Phase Transitions and Microstructures in Condensed Matters, Yili Normal University, Yining 835000 (China); Han Dong; Jiang Yiming; Shi Chong [Department of Materials Science, Fudan University, Shanghai 200433 (China); Li Jin, E-mail: jinli@fudan.edu.cn [Department of Materials Science, Fudan University, Shanghai 200433 (China)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer The relationship between pitting corrosion resistance and annealing temperature for UNS S32304 was systemically studied. Black-Right-Pointing-Pointer The specimens annealed at 1080 Degree-Sign C for 1 h, quenched in water exhibit the best pitting corrosion resistance. Black-Right-Pointing-Pointer The relationship between microstructural evolution and pitting resistance of annealed UNS S32304 was discussed in detail. Black-Right-Pointing-Pointer The pitting corrosion resistance is consistent with pitting resistance equivalent number of weaker phase for UNS S32304 alloy. - Abstract: The effect of annealing temperature in the range from 1000 to 1200 Degree-Sign C on the pitting corrosion behavior of duplex stainless steel UNS S32304 was investigated by the potentiodynamic polarization and potentiostatic critical pitting temperature techniques. The microstructural evolution and pit morphologies were studied using a scanning electron microscopy with energy dispersive X-ray spectroscopy. The results demonstrated that the nucleation of metastable pits transformed from austenite phase to ferrite phase with the increasing annealing temperature. As the annealing temperature increased, the pitting corrosion resistance firstly increased and then decreased. The highest pitting corrosion resistance was obtained at 1080 Degree-Sign C with the highest critical pitting temperature value and pitting nucleation resistance. The results could be well explained by the microstructural evolution of ferrite and austenite phases induced by annealing treatment.

  6. Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si{sub 0.7}Ge{sub 0.3} (001) as a function of annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dae-Kyoung; Kang, Yu Seon; Kang, Hang Kyu; Cho, Mann-Ho [Institute of Physics and Applied Physics, Yonsei University, Seoul (Korea, Republic of); Ko, Dae Hong [Department of Material Science and Engineering, Yonsei University, Seoul (Korea, Republic of); Lee, Sun Young; Kim, Dong Chan [Process Development Team, Semiconductor R and D Center, Samsung Electronics Co., Ltd., Yongin (Korea, Republic of); Kim, Chang Soo [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of); Seo, Jung Hye [Division of Material Science, Korea Basic Science Institute, Daejeon (Korea, Republic of)

    2013-11-15

    Hf-based dielectrics were prepared using atomic layer deposition in order to investigate the effect of Si incorporation on the interfacial reaction and thermal stability in HfO{sub 2} films on SiGe substrates. Two concentrations [100% HfO{sub 2} and 50% HfO{sub 2} 50% SiO{sub 2}(HfSiO)] were used on strained Si{sub 0.7}Ge{sub 0.3} substrates; a partially-crystalline phase was observed in the as-grown HfO{sub 2} film, and was not observed in the as-grown HfSiO film. Phase separation between the SiO{sub x} and HfO{sub x} in HfSiO film did occur, however, when the annealing temperature was increased to over 900 C, leading to the out-diffusion of Si from the Si{sub 0.7}Ge{sub 0.3} substrate and the formation of a Ge-rich layer at the interface between HfSiO and Si{sub 0.7}Ge{sub 0.3}. Finally, the strain in the Si{sub 0.7}Ge{sub 0.3} substrate was relaxed, and interfacial states greatly increased in HfSiO/Si{sub 0.7}Ge{sub 0.3} with the 900 C anneal. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Thermal Annealing of Paramagnetic Defects Induced by Gamma Irradiation in (NH4)2SO4 and (ND4)2SO4 Single Crystals: Experimental Verification of the Theory of Fletcher and Brown

    International Nuclear Information System (INIS)

    In irradiated (NH4)2SO4 And (ND4)2SO4 crystals two paramagnetic species were identified by means of the electron spin resonance method. The g constant of the first radical is 2.014 and of the second 2.020 for the normal hydrogen compound; for the deuterated compound they are 1.996 and 2.0032 respectively. Study of the annealing of the first radical in the 60°-170°C range showed that in this case the kinetics display a single plateau corresponding to a total recombination of the radicals. For each isotherm it was possible to obtain the appropriate equation using the errors function derived by Fletcher and Brown and taking as a model the recombination of initially correlated (and subsequently liberated) pairs by a random-walk process. Agreement between this function and experimental results was obtained after correcting the function by a factor α. The composite annealing curve is in good agreement with the corrected errors function. Using the phenomenological method of Fletcher and Brown for calculating the activation energy we obtained a value of 1.594 eV, corresponding to the first radical in (NH4)2SO4. On the basis of the variation of the diffusion coefficient with temperature we obtained a value of 1.592 eV for the same activation energy. With the Vand- Primack method we obtained 1.45 eV, which is lower than the two preceding values. We concluded that the recombination of correlated pairs by a random-walk process can be used as a model in the form given by the theory if the interaction between the species formed and the lattice is fairly weak; in this way the pairs which are initially correlated can be liberated. (author)

  8. Management of light absorption in extraordinary optical transmission based ultra-thin-film tandem solar cells

    Science.gov (United States)

    Mashooq, Kishwar; Talukder, Muhammad Anisuzzaman

    2016-05-01

    Although ultra-thin-film solar cells can be attractive in reducing the cost, they suffer from low absorption as the thickness of the active layer is usually much smaller than the wavelength of incident light. Different nano-photonic techniques, including plasmonic structures, are being explored to increase the light absorption in ultra-thin-film solar cells. More than one layer of active materials with different energy bandgaps can be used in tandem to increase the light absorption as well. However, due to different amount of light absorption in different active layers, photo-generated currents in different active layers will not be the same. The current mismatch between the tandem layers makes them ineffective in increasing the efficiency. In this work, we investigate the light absorption properties of tandem solar cells with two ultra-thin active layers working as two subcells and a metal layer with periodically perforated holes in-between the two subcells. While the metal layer helps to overcome the current mismatch, the periodic holes increase the absorption of incident light by helping extraordinary optical transmission of the incident light from the top to the bottom subcell, and by coupling the incident light to plasmonic and photonic modes within ultra-thin active layers. We extensively study the effects of the geometry of holes in the intermediate metal layer on the light absorption properties of tandem solar cells with ultra-thin active layers. We also study how different metals in the intermediate layer affect the light absorption; how the geometry of holes in the intermediate layer affects the absorption when the active layer materials are changed; and how the intermediate metal layer affects the collection of photo-generated electron-hole pairs at the terminals. We find that in a solar cell with 6,6-phenyl C61-butyric acid methyl ester top subcell and copper indium gallium selenide bottom subcell, if the periodic holes in the metal layer are square or

  9. Cylinder packing by simulated annealing

    Directory of Open Access Journals (Sweden)

    M. Helena Correia

    2000-12-01

    Full Text Available This paper is motivated by the problem of loading identical items of circular base (tubes, rolls, ... into a rectangular base (the pallet. For practical reasons, all the loaded items are considered to have the same height. The resolution of this problem consists in determining the positioning pattern of the circular bases of the items on the rectangular pallet, while maximizing the number of items. This pattern will be repeated for each layer stacked on the pallet. Two algorithms based on the meta-heuristic Simulated Annealing have been developed and implemented. The tuning of these algorithms parameters implied running intensive tests in order to improve its efficiency. The algorithms developed were easily extended to the case of non-identical circles.Este artigo aborda o problema de posicionamento de objetos de base circular (tubos, rolos, ... sobre uma base retangular de maiores dimensões. Por razões práticas, considera-se que todos os objetos a carregar apresentam a mesma altura. A resolução do problema consiste na determinação do padrão de posicionamento das bases circulares dos referidos objetos sobre a base de forma retangular, tendo como objetivo a maximização do número de objetos estritamente posicionados no interior dessa base. Este padrão de posicionamento será repetido em cada uma das camadas a carregar sobre a base retangular. Apresentam-se dois algoritmos para a resolução do problema. Estes algoritmos baseiam-se numa meta-heurística, Simulated Annealling, cuja afinação de parâmetros requereu a execução de testes intensivos com o objetivo de atingir um elevado grau de eficiência no seu desempenho. As características dos algoritmos implementados permitiram que a sua extensão à consideração de círculos com raios diferentes fosse facilmente conseguida.

  10. A study on track annealing in Chaoyang No.1 polycarbonate

    International Nuclear Information System (INIS)

    This paper describes annealing characteristics of 208Pb and 93Nb ion tracks in Chaoyang No.1 polycarbonate, including the effect of annealing temperature on track etching rate and the effect of annealing temperature and annealing time on annealing rate. The result shows that activation energy of annealing for 208Pb and 93Nb in Chaoyang No.1 polycarbonate is 0.891 eV and 0.352 eV respectively

  11. Theory of Quantum Annealing of an Ising Spin Glass

    OpenAIRE

    Santoro, Giuseppe E.; Martonak, Roman; Tosatti, Erio; Car, Roberto

    2002-01-01

    Probing the lowest energy configuration of a complex system by quantum annealing was recently found to be more effective than its classical, thermal counterpart. Comparing classical and quantum Monte Carlo annealing protocols on the random two-dimensional Ising model we confirm the superiority of quantum annealing relative to classical annealing. We also propose a theory of quantum annealing, based on a cascade of Landau-Zener tunneling events. For both classical and quantum annealing, the re...

  12. Production of high-quality ZnO films by the two-step annealing method

    Science.gov (United States)

    Ye, J. D.; Gu, S. L.; Zhu, S. M.; Qin, F.; Liu, S. M.; Liu, W.; Zhou, X.; Hu, L. Q.; Zhang, R.; Shi, Y.; Zheng, Y. D.

    2004-11-01

    In this study, a two-step annealing method is advanced to produce high-quality ZnO films with excellent structural, electrical, and optical properties. The effects of oxygen and nitrogen annealing on the properties of undoped ZnO films are reversible to each other and are attributed to the creation and annihilation of extrinsic trap states of antisite oxygen OZn and oxygen vacancies VO, which result from the chemisorption and desorption of oxygen, respectively. Moreover, annealing in nitrogen causes slight nitrogen incorporation, subsequently increasing the resistivity and inducing compressive stress in the film. The key to this two-step method is to keep the chemisorption and desorption of oxygen in equilibrium. Due to the similarity of annealing ambient with the growth condition, this process can be transplanted and employed in the in situ preparation of high-quality ZnO epilayers.

  13. Post annealing performance evaluation of printable interdigital capacitive sensors by principal component analysis

    KAUST Repository

    Zia, Asif Iqbal

    2015-06-01

    The surface roughness of thin-film gold electrodes induces instability in impedance spectroscopy measurements of capacitive interdigital printable sensors. Post-fabrication thermodynamic annealing was carried out at temperatures ranging from 30 °C to 210 °C in a vacuum oven and the variation in surface morphology of thin-film gold electrodes was observed by scanning electron microscopy. Impedance spectra obtained at different temperatures were translated into equivalent circuit models by applying complex nonlinear least square curve-fitting algorithm. Principal component analysis was applied to deduce the classification of the parameters affected due to the annealing process and to evaluate the performance stability using mathematical model. Physics of the thermodynamic annealing was discussed based on the surface activation energies. The post anneal testing of the sensors validated the achieved stability in impedance measurement. © 2001-2012 IEEE.

  14. An investigation of the mechanical strengthening effect of hydrogen anneal for silicon torsion bar

    International Nuclear Information System (INIS)

    This paper reports on the use of hydrogen anneal to enhance the torsional fracture strength of dry-etched single crystal silicon (SCS) microstructures. Moving-magnet-type scanning mirrors with torsion bars were employed as fracture test specimens. Two types of device were fabricated using SCS and silicon-on-insulator (SOI) wafers by deep reactive ion etching (DRIE). For the SCS-wafer-based device, scalloping on DRIE sidewalls were smoothed out and the fracture strength of the torsion bar was improved by a factor of three by 120 min hydrogen anneal. For the SOI-wafer-based device, hydrogen anneal introduced surface irregularity onto the Si sidewalls by hydrogen-induced etching with the existence of SiO2. As a result, the fracture strength of the torsion bar was degraded contrarily. Therefore, hydrogen anneal is effective in improving the mechanical reliability of SCS microstructures without SiO2. (paper)

  15. Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient

    Directory of Open Access Journals (Sweden)

    Werner M

    2011-01-01

    Full Text Available Abstract La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA at 900°C in both nitrogen and air. Higher k-values (~32 were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie–von Schweidler (CS and Havriliak–Negami (HN relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.

  16. Precision Laser Annealing of Focal Plane Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bender, Daniel A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); DeRose, Christopher [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Starbuck, Andrew Lea [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Verley, Jason C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jenkins, Mark W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.

  17. Enhancing performance and uniformity of CH3NH3PbI3−xClx perovskite solar cells by air-heated-oven assisted annealing under various humidities

    OpenAIRE

    Qing Zhou; Zhiwen Jin; Hui Li; Jizheng Wang

    2016-01-01

    To fabricate high-performance metal-halide perovskite solar cells, a thermal annealing process is indispensable in preparing high quality perovskite film. And usually such annealing is performed on hot plate. However hot-plate annealing could cause problems such as inhomogeneous heating (induced by non-tight contact between the sample and the plate), it is also not fit for large scale manufactory. In this paper, we conduct the annealing process in air-heated oven under various humidity enviro...

  18. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  19. Polarization dependent color switching by extra-ordinary transmission in H-slit plasmonic metasurface

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, P.; Anantha Ramakrishna, S. [Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016 (India); Patil, Raj; Venu Gopal, Achanta [DCMP and MS, Tata Institute of Fundamental Research, Colaba, Mumbai 400005 (India)

    2013-12-14

    An array of H-shaped subwavelength slits in a plasmonic film has a polarization dependent extra-ordinary transmission due to shape anisotropy. Non-overlapping extra-ordinary transmission bands for the orthogonal linear polarization states of the input light are used to demonstrate a polarization dependent color switch. The fabricated array of submicron sized H-slits on a gold film displayed two transmission bands for the linear x- and y-polarized light at visible (650–850 nm) and near-infra-red (1150–1450 nm) bands, respectively. The relative transmitted light in these two bands can be controlled by changing the linear polarization state of the input radiation from 0° to 90°.

  20. Electronically tunable extraordinary optical transmission in graphene plasmonic ribbons coupled to subwavelength metallic slit arrays

    Science.gov (United States)

    Kim, Seyoon; Jang, Min Seok; Brar, Victor W.; Tolstova, Yulia; Mauser, Kelly W.; Atwater, Harry A.

    2016-08-01

    Subwavelength metallic slit arrays have been shown to exhibit extraordinary optical transmission, whereby tunnelling surface plasmonic waves constructively interfere to create large forward light propagation. The intricate balancing needed for this interference to occur allows for resonant transmission to be highly sensitive to changes in the environment. Here we demonstrate that extraordinary optical transmission resonance can be coupled to electrostatically tunable graphene plasmonic ribbons to create electrostatic modulation of mid-infrared light. Absorption in graphene plasmonic ribbons situated inside metallic slits can efficiently block the coupling channel for resonant transmission, leading to a suppression of transmission. Full-wave simulations predict a transmission modulation of 95.7% via this mechanism. Experimental measurements reveal a modulation efficiency of 28.6% in transmission at 1,397 cm-1, corresponding to a 2.67-fold improvement over transmission without a metallic slit array. This work paves the way for enhancing light modulation in graphene plasmonics by employing noble metal plasmonic structures.

  1. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Pure α-Al2O3 exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al2O3 thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source

  2. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A. K. Nanda, E-mail: aknk27@yahoo.com; Subramanian, B. [ECMS Division, Central Electro Chemical Research Institute, Karaikudi (India); Prasanna, S. [Department of Physics, PSG College of Technology, Coimbatore (India); Jayakumar, S. [Department of Physics, PSG Institute of Technology and Applied Research, Coimbatore (India); Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore (India)

    2015-03-28

    Pure α-Al{sub 2}O{sub 3} exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al{sub 2}O{sub 3} thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source.

  3. Tree-wave mixing of ordinary and backward electromagnetic waves: extraordinary transients

    OpenAIRE

    Slabko, Vitaly V.; Popov, Alexander K.; Tkachenko, Viktor A.; Myslivets, Sergey A.

    2016-01-01

    Three-wave mixing of ordinary and backward electromagnetic waves in pulsed regime is investigated in the metamaterials, which enable co-existence and phase matching of such waves. It is shown that opposite direction of phase velocity and energy flux in backward waves gives rise to extraordinary transient processes in greatly enhanced optical parametric amplification and in frequency up or down shifting nonlinear reflectivity. The discovered transients resemble slowed response of an oscillator...

  4. Tree-wave mixing of ordinary and backward electromagnetic waves: extraordinary transients

    CERN Document Server

    Slabko, Vitaly V; Tkachenko, Viktor A; Myslivets, Sergey A

    2016-01-01

    Three-wave mixing of ordinary and backward electromagnetic waves in pulsed regime is investigated in the metamaterials, which enable co-existence and phase matching of such waves. It is shown that opposite direction of phase velocity and energy flux in backward waves gives rise to extraordinary transient processes in greatly enhanced optical parametric amplification and in frequency up or down shifting nonlinear reflectivity. The discovered transients resemble slowed response of an oscillator on pulsed excitation in the vicinity of its resonance

  5. Was Singapore extraordinary? A comparative view of Singapore's saving performance 1965-99

    OpenAIRE

    Hopf, Gregor

    2009-01-01

    Although the mere observation of saving aggregates might have us believe differently, this article argues that Singapore's sustained high saving performance was far from extraordinary once the country's particular circumstances are econometrically controlled for. Singapore's saving performance should therefore not be regarded as a mere blip in economic history. As a matter of fact, not the high saving rates in the late 1980s and 1990s, which usually attract the most attention, but rather the ...

  6. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays

    OpenAIRE

    Chen, Hou-Tong; LU, Hong; Azad, Abul K.; Averitt, Richard D.; Gossard, Arthur C.; Trugman, Stuart A.; O'Hara, John F.; Antoinette J. Taylor

    2008-01-01

    We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth ...

  7. Feedback-optimized Extraordinary Optical Transmission of Continuous-variable Entangled States

    OpenAIRE

    Wang, Dong; Xia, Chuanqing; Wang, Qianjin; Wu, Yang; Liu, Fang; Zhang, Yong; Xiao, Min

    2014-01-01

    We report on the feedback-optimized extraordinary optical transmission of continuous-variable entangled states through a hexagonal metal-hole array. The continuous-variable entanglements from a nondegenerate optical parametric amplifier are first demonstrated to survive after a photon-plasmon-photon conversion process. By controlling the reflected light from the metal-hole array, a significant enhancement of quantum correlations has then been experimentally achieved comparing to the case of w...

  8. Simulated Quantum Annealing Can Be Exponentially Faster than Classical Simulated Annealing

    OpenAIRE

    Crosson, Elizabeth; Harrow, Aram W.

    2016-01-01

    Simulated Quantum Annealing (SQA) is a Markov Chain Monte-Carlo algorithm that samples the equilibrium thermal state of a Quantum Annealing (QA) Hamiltonian. In addition to simulating quantum systems, SQA has also been proposed as another physics-inspired classical algorithm for combinatorial optimization, alongside classical simulated annealing. However, in many cases it remains an open challenge to determine the performance of both QA and SQA. One piece of evidence for the strength of Q...

  9. Quantum Annealing of a Disordered Magnet

    OpenAIRE

    Brooke, J.; Bitko, D.; Rosenbaum, T. F.; Aeppli, G.

    2001-01-01

    Traditional simulated annealing utilizes thermal fluctuations for convergence in optimization problems. Quantum tunneling provides a different mechanism for moving between states, with the potential for reduced time scales. We compare thermal and quantum annealing in a model disordered Ising magnet, Li\\sub{Ho}{0.44}\\sub{Y}{0.56}\\sub{F}{4}, where the effects of quantum mechanics can be tuned in the laboratory by varying a magnetic field applied transverse to the Ising axis. Our results indicat...

  10. Adaptive simulated annealing (ASA): Lessons learned

    OpenAIRE

    Ingber, L.

    2000-01-01

    Adaptive simulated annealing (ASA) is a global optimization algorithm based on an associated proof that the parameter space can be sampled much more efficiently than by using other previous simulated annealing algorithms. The author's ASA code has been publicly available for over two years. During this time the author has volunteered to help people via e-mail, and the feedback obtained has been used to further develop the code. Some lessons learned, in particular some which are relevant to ot...

  11. Structural relaxation in annealed hyperquenched basaltic glasses

    DEFF Research Database (Denmark)

    Guo, Xiaoju; Mauro, John C.; Potuzak, M.;

    2012-01-01

    The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

  12. Morphological changes during annealing of polyethylene nanocrystals

    OpenAIRE

    Basu, Nandita; Osichow, Anna; Mecking, Stefan; Reiter, Günter

    2012-01-01

    Polymer crystals are metastable and exhibit morphological changes when being annealed. To observe morphological changes on molecular scales we started from small nanometer-sized crystals of highly folded long-chain polymers. Micron-sized stripes consisting of monolayers or stacks of several layers of flat-on oriented polyethylene nanocrystals were generated via evaporative dewetting from an aqueous dispersion. We followed the morphological changes in time and at progressively higher annealing...

  13. Laser annealing of thin film polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    Chowdhury A.

    2013-11-01

    Full Text Available Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

  14. Microstructural Evolutions During Annealing of Plastically Deformed AISI 304 Austenitic Stainless Steel: Martensite Reversion, Grain Refinement, Recrystallization, and Grain Growth

    Science.gov (United States)

    Naghizadeh, Meysam; Mirzadeh, Hamed

    2016-08-01

    Microstructural evolutions during annealing of a plastically deformed AISI 304 stainless steel were investigated. Three distinct stages were identified for the reversion of strain-induced martensite to austenite, which were followed by the recrystallization of the retained austenite phase and overall grain growth. It was shown that the primary recrystallization of the retained austenite postpones the formation of an equiaxed microstructure, which coincides with the coarsening of the very fine reversed grains. The latter can effectively impair the usefulness of this thermomechanical treatment for grain refinement at both high and low annealing temperatures. The final grain growth stage, however, was found to be significant at high annealing temperatures, which makes it difficult to control the reversion annealing process for enhancement of mechanical properties. Conclusively, this work unravels the important microstructural evolution stages during reversion annealing and can shed light on the requirements and limitations of this efficient grain refining approach.

  15. Microstructural Evolutions During Annealing of Plastically Deformed AISI 304 Austenitic Stainless Steel: Martensite Reversion, Grain Refinement, Recrystallization, and Grain Growth

    Science.gov (United States)

    Naghizadeh, Meysam; Mirzadeh, Hamed

    2016-06-01

    Microstructural evolutions during annealing of a plastically deformed AISI 304 stainless steel were investigated. Three distinct stages were identified for the reversion of strain-induced martensite to austenite, which were followed by the recrystallization of the retained austenite phase and overall grain growth. It was shown that the primary recrystallization of the retained austenite postpones the formation of an equiaxed microstructure, which coincides with the coarsening of the very fine reversed grains. The latter can effectively impair the usefulness of this thermomechanical treatment for grain refinement at both high and low annealing temperatures. The final grain growth stage, however, was found to be significant at high annealing temperatures, which makes it difficult to control the reversion annealing process for enhancement of mechanical properties. Conclusively, this work unravels the important microstructural evolution stages during reversion annealing and can shed light on the requirements and limitations of this efficient grain refining approach.

  16. Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films

    International Nuclear Information System (INIS)

    CuInSe2 (CISe) is a prototype material for the I–III–VI chalcopyrites such as Cu(In,Ga)(S,Se)2 used as absorber layers in thin film photovoltaic cells. Carefully-controlled pulsed-laser annealing (PLA) is a unique annealing process that has been demonstrated to improve the device performance of chalcopyrite solar cells. Here, we investigate the changes in defect populations after PLA of electrochemically-deposited CISe thin films previously furnace annealed in selenium vapor. The films were irradiated in the sub-melting regime at fluences inducing temperatures up to 840 ± 100 K. Deep-level transient spectroscopy on Schottky diodes reveals that the activation energy of the dominant majority carrier trap changes non-monotonically from 215 ± 10 meV for the reference sample, to 330 ± 10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215 ± 10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. - Highlights: ► Pulsed laser annealing (PLA) effects studied on CuInSe2 films ► PLA improves crystalline order parameter. ► PLA induces changes in majority carrier defect levels

  17. Direct observations of the vacancy and its annealing in germanium

    DEFF Research Database (Denmark)

    Slotte, J.; Kilpeläinen, S.; Tuomisto, F.;

    2011-01-01

    K. This is identified as the positron lifetime in a germanium monovacancy. Annealing experiments in the temperature interval 35–300 K reveal two annealing stages. The first at 100 K is tentatively associated with the annealing of the Frenkel pair, the second at 200 K with the annealing of the...

  18. SANS examination of irradiated RPV steel welds during in-situ annealing

    Energy Technology Data Exchange (ETDEWEB)

    Boothby, R.M. [National Nuclear Laboratory, B168 Harwell Campus, Didcot, Oxon. OX11 0QT (United Kingdom); Hyde, J.M., E-mail: jonathan.m.hyde@nnl.co.uk [National Nuclear Laboratory, B168 Harwell Campus, Didcot, Oxon. OX11 0QT (United Kingdom); Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Swan, H. [National Nuclear Laboratory, B168 Harwell Campus, Didcot, Oxon. OX11 0QT (United Kingdom); Parfitt, D.; Wilford, K. [Rolls-Royce plc, P.O. Box 2000, Derby DE21 7XX (United Kingdom); Lindner, P. [Institut Laue-Langevin, 71 avenue des Martyrs, CS20156, 38042 Grenoble CEDEX 9 (France)

    2015-06-15

    An in-situ annealing experiment was performed using SANS measurements to examine the distribution and thermal stability of irradiation-induced solute clusters in RPV steel welds. Samples were sequentially annealed for 30 min at ∼50 °C intervals in the temperature range 295–497 °C. A methodology was developed to correct the observed data to allow for increased thermal diffuse scattering during annealing which enabled analysis of the changes in coherent scattering in isolation. Results for a low-Ni weld irradiated at low temperature showed apparent decreases in the volume fraction of solute clusters during annealing. However the cluster size was unaffected and these results could have arisen from reduced scattering contrast due to compositional changes, rather than cluster dissolution. A similarly irradiated high-Ni weld exhibited cluster coarsening at high annealing temperatures. Samples of both welds irradiated at a higher temperature were relatively unaffected by annealing except at high temperatures where some shrinkage, indicative of cluster dissolution, occurred.

  19. SANS examination of irradiated RPV steel welds during in-situ annealing

    International Nuclear Information System (INIS)

    An in-situ annealing experiment was performed using SANS measurements to examine the distribution and thermal stability of irradiation-induced solute clusters in RPV steel welds. Samples were sequentially annealed for 30 min at ∼50 °C intervals in the temperature range 295–497 °C. A methodology was developed to correct the observed data to allow for increased thermal diffuse scattering during annealing which enabled analysis of the changes in coherent scattering in isolation. Results for a low-Ni weld irradiated at low temperature showed apparent decreases in the volume fraction of solute clusters during annealing. However the cluster size was unaffected and these results could have arisen from reduced scattering contrast due to compositional changes, rather than cluster dissolution. A similarly irradiated high-Ni weld exhibited cluster coarsening at high annealing temperatures. Samples of both welds irradiated at a higher temperature were relatively unaffected by annealing except at high temperatures where some shrinkage, indicative of cluster dissolution, occurred

  20. Effect of annealing on phase sequence and their composition in the Pt-coated Mo system

    Energy Technology Data Exchange (ETDEWEB)

    Khumalo, Z.M., E-mail: zakhele@tlabs.ac.za [Department of Physics, University of Cape Town, Private Bag X3, Rondebosch 7701 (South Africa); Materials Research Department, National Research Foundation, iThemba LABS, P.O. Box 722, Somerset West (South Africa); Topić, M. [Materials Research Department, National Research Foundation, iThemba LABS, P.O. Box 722, Somerset West (South Africa); Comrie, C.M. [Department of Physics, University of Cape Town, Private Bag X3, Rondebosch 7701 (South Africa); Materials Research Department, National Research Foundation, iThemba LABS, P.O. Box 722, Somerset West (South Africa); Blumenthal, M. [Department of Physics, University of Cape Town, Private Bag X3, Rondebosch 7701 (South Africa); Pineda-Vargas, C.A.; Bucher, R. [Materials Research Department, National Research Foundation, iThemba LABS, P.O. Box 722, Somerset West (South Africa); Kisslinger, K. [Center for Functional Nanomaterials, Brookhaven National Laboratory, P.O. Box 5000, Upton, NY USA (United States)

    2014-11-01

    Highlights: • Platinum coatings were prepared using electron beam evaporator. • The phase analysis revealed the presence of the MoPt{sub 2} and MoPt. • At low annealing time, the MoPt{sub 2} phase appeared to have more Pt content. • The MoPt{sub 2} phase disappeared as the annealing time increases. • It is believed that the MoPt phase was growing at the expense of the MoPt{sub 2}. - Abstract: The phase formation sequence and the composition of phases induced by thermal annealing in a platinum (Pt) coated molybdenum (Mo) system were investigated by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The X-ray diffraction study of a 0.2 μm thick platinum layer deposited on a Mo substrate and annealed at temperatures between 800 °C and 900 °C for different periods of time shows the formation of MoPt{sub 2} and MoPt phases. It was also found that these phases nucleate sequentially and the MoPt{sub 2} phase becomes unstable at 900 °C after a longer annealing time of 8 h. Rutherford backscattering spectroscopy and transmission electron microscopy showed that the coating thickness approximately doubled after thermal annealing, from 0.22 μm to 0.46 μm, due to the formation of the Pt–Mo phases.

  1. Effect of annealing on phase sequence and their composition in the Pt-coated Mo system

    International Nuclear Information System (INIS)

    Highlights: • Platinum coatings were prepared using electron beam evaporator. • The phase analysis revealed the presence of the MoPt2 and MoPt. • At low annealing time, the MoPt2 phase appeared to have more Pt content. • The MoPt2 phase disappeared as the annealing time increases. • It is believed that the MoPt phase was growing at the expense of the MoPt2. - Abstract: The phase formation sequence and the composition of phases induced by thermal annealing in a platinum (Pt) coated molybdenum (Mo) system were investigated by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The X-ray diffraction study of a 0.2 μm thick platinum layer deposited on a Mo substrate and annealed at temperatures between 800 °C and 900 °C for different periods of time shows the formation of MoPt2 and MoPt phases. It was also found that these phases nucleate sequentially and the MoPt2 phase becomes unstable at 900 °C after a longer annealing time of 8 h. Rutherford backscattering spectroscopy and transmission electron microscopy showed that the coating thickness approximately doubled after thermal annealing, from 0.22 μm to 0.46 μm, due to the formation of the Pt–Mo phases

  2. Moessbauer study on Fe-based nanocrystalline alloys stress-annealed by DC Joule heat

    International Nuclear Information System (INIS)

    Amorphous Fe73.5Cu1Nb3Si13.5B9 alloy was annealed under stress by DC Joule-heating to induce magnetic anisotropy. The magnetic properties of the treated samples were examined by dynamic hysteresis loops, longitudinally driven giant magneto-impedance effect and Moessbauer spectra. The experimental results show that nano crystallization occurs in the amorphous alloys when the current density is above 4.11 x 107 A/m2, and the annealed samples will be induced transverse magnetic anisotropy under suitable current and stress. The magnetic anisotropy increases with the increasing of annealing current density, which is closely related to the amount of α-FeSi nanocrystalline in the alloy

  3. Annealing effects on the microstructure and magnetic domain structures of duplex stainless steel studied by in situ technique

    International Nuclear Information System (INIS)

    Highlights: ► The volume fraction of ferrite phase increased with increasing annealing temperature. ► The heat treatment has no effect on the crystal structure of the ferrite phase. ► The magnetic domain structure changes more obviously as annealing temperature rises. ► The ferrite grain orientations change after annealing treatments. - Abstract: The effects of annealing temperature on the microstructure and the magnetic domain structures of duplex stainless steel 2507 were investigated by the magnetic force microscopy (MFM), X-ray diffraction (XRD), and electron backscattered diffraction (EBSD). The MFM and XRD results indicated that the volume fraction of ferrite phase increased with increasing annealing temperature, but the lattice constants kept constant. Moreover, with the rise of annealing temperature, the magnetic domain structure in the ferrite phase varied gradually, where the magnetic domain became thinner and the distribution turned more homogeneous. These results gave a direct evidence for the changes of microstructure and magnetic domain structure induced by the annealing treatment. EBSD analysis showed that the orientation of ferrite grains changed after annealing treatments, which coincided with the changes of the microstructure and the magnetic domain structures.

  4. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-14

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

  5. Annealing effects on the microstructure and magnetic domain structures of duplex stainless steel studied by in situ technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, L.Q., E-mail: glq@mater.ustb.edu.cn [Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083 (China); Zhao, X.M.; Li, M.; Zhang, W.J.; Bai, Y.; Qiao, L.J. [Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083 (China)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer The volume fraction of ferrite phase increased with increasing annealing temperature. Black-Right-Pointing-Pointer The heat treatment has no effect on the crystal structure of the ferrite phase. Black-Right-Pointing-Pointer The magnetic domain structure changes more obviously as annealing temperature rises. Black-Right-Pointing-Pointer The ferrite grain orientations change after annealing treatments. - Abstract: The effects of annealing temperature on the microstructure and the magnetic domain structures of duplex stainless steel 2507 were investigated by the magnetic force microscopy (MFM), X-ray diffraction (XRD), and electron backscattered diffraction (EBSD). The MFM and XRD results indicated that the volume fraction of ferrite phase increased with increasing annealing temperature, but the lattice constants kept constant. Moreover, with the rise of annealing temperature, the magnetic domain structure in the ferrite phase varied gradually, where the magnetic domain became thinner and the distribution turned more homogeneous. These results gave a direct evidence for the changes of microstructure and magnetic domain structure induced by the annealing treatment. EBSD analysis showed that the orientation of ferrite grains changed after annealing treatments, which coincided with the changes of the microstructure and the magnetic domain structures.

  6. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

    International Nuclear Information System (INIS)

    Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon

  7. Magnetism of CoFe{sub 2}O{sub 4} thin films annealed under the magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Y.Q. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Dai, J.M., E-mail: jmdai@issp.ac.cn [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Tang, X.W.; Zi, Z.F.; Zhang, K.J.; Zhu, X.B.; Yang, J. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Sun, Y.P. [Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 (China)

    2015-11-15

    Polycrystalline CoFe{sub 2}O{sub 4} thin films were deposited on Si (100) substrates by chemical solution deposition with and without magnetic annealing. Magnetic field directions were applied parallel and perpendicular to the film surface during the magnetic annealing process. The variations of strain, microstructure and magnetic anisotropy of the films caused by the magnetic annealing are investigated. The results show that the film densification is promoted and grain morphology is changed by the magnetic annealing, which can be attributed to the promoting effect of magnetization force on the grain growing and grain boundary diffusing. Magnetic measurements indicate the enhancement of anisotropy and saturation magnetizations of the polycrystalline CoFe{sub 2}O{sub 4} after magnetic annealing. Furthermore, the rotation of easy axis along the field direction, the increased occupation of Co{sup 2+} ions at B sites and the additional strain induced by the magnetic field are considered as the main reasons of the increased magnetic anisotropy. - Highlights: • CFO films were annealed in magnetic field with parallel and vertical directions. • The film densification and grain size were changed by the applied magnetic field. • A higher saturation magnetization is obtained under magnetic annealing. • The enhanced magnetic anisotropy is observed after magnetic annealing.

  8. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  9. Microstructural evolution of nanocrystalline Fe–Zr alloys upon annealing treatment

    International Nuclear Information System (INIS)

    Nanocrystalline Fe–Zr alloys exhibit an extraordinary thermal stability at elevated temperatures, which enables their potential applications in various fields. However, there remain concerns regarding the controlling stabilization mechanisms responsible for their thermal stability. In this work, two nanocrystalline Fe–Zr alloys containing 1 at.% Zr and 5 at.% Zr were annealed at various temperatures (Tann) up to 900 °C. Microstructural evolution of the alloys upon annealing was investigated by means of an X-ray diffractometer equipped with a 2-dimensional detector and transmission electron microscopy. Below 600 °C, microstructures of the two alloys consist of single nanocrystalline ferrite whose grain size is rather stable upon annealing treatments. Above 600 °C, accompanying the precipitation of Fe3Zr phase, an apparent grain coarsening of ferrite is observed, whereas the thermal stability of the alloys is still considerably higher than that of nanocrystalline pure Fe. Based on the experimental results, it was claimed that stabilization of the nanocrystalline Fe–Zr alloys should not be totally ascribed to the thermodynamic stabilization mechanism due to the reduction in grain boundary energy as suggested in earlier investigations [K.A. Darling et al., Scr. Mater. 59 (2008) 530 and K.A. Darling et al., Mater. Sci. Eng. A527 (2010) 3572]; when Tann is higher than 600 °C, along with the precipitation of Fe3Zr, the effect of thermodynamic stabilization is weakened, the kinetic effect arising from Zener pinning of Fe3Zr precipitates turns to be an important mechanism contributing to the stabilization of the nanoscale grain size. - Highlights: • We show clear evidence of precipitation of Fe3Zr phase above 600 °C. • Stabilization of nanostructure is not solely controlled by thermodynamic mechanism. • Above 600 °C, Zener pinning plays an important role in stabilizing nanostructure

  10. Microstructural evolution of nanocrystalline Fe–Zr alloys upon annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Shi, X.H. [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072 Xi' an (China); Chen, Y.Z., E-mail: yzchen@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072 Xi' an (China); Ma, X.Y. [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072 Xi' an (China); Wang, H.T. [Institute of Applied Mechanics, Zhejiang University, 310027 Hangzhou (China); Liu, F., E-mail: liufeng@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, 710072 Xi' an (China)

    2015-05-15

    Nanocrystalline Fe–Zr alloys exhibit an extraordinary thermal stability at elevated temperatures, which enables their potential applications in various fields. However, there remain concerns regarding the controlling stabilization mechanisms responsible for their thermal stability. In this work, two nanocrystalline Fe–Zr alloys containing 1 at.% Zr and 5 at.% Zr were annealed at various temperatures (T{sub ann}) up to 900 °C. Microstructural evolution of the alloys upon annealing was investigated by means of an X-ray diffractometer equipped with a 2-dimensional detector and transmission electron microscopy. Below 600 °C, microstructures of the two alloys consist of single nanocrystalline ferrite whose grain size is rather stable upon annealing treatments. Above 600 °C, accompanying the precipitation of Fe{sub 3}Zr phase, an apparent grain coarsening of ferrite is observed, whereas the thermal stability of the alloys is still considerably higher than that of nanocrystalline pure Fe. Based on the experimental results, it was claimed that stabilization of the nanocrystalline Fe–Zr alloys should not be totally ascribed to the thermodynamic stabilization mechanism due to the reduction in grain boundary energy as suggested in earlier investigations [K.A. Darling et al., Scr. Mater. 59 (2008) 530 and K.A. Darling et al., Mater. Sci. Eng. A527 (2010) 3572]; when T{sub ann} is higher than 600 °C, along with the precipitation of Fe{sub 3}Zr, the effect of thermodynamic stabilization is weakened, the kinetic effect arising from Zener pinning of Fe{sub 3}Zr precipitates turns to be an important mechanism contributing to the stabilization of the nanoscale grain size. - Highlights: • We show clear evidence of precipitation of Fe{sub 3}Zr phase above 600 °C. • Stabilization of nanostructure is not solely controlled by thermodynamic mechanism. • Above 600 °C, Zener pinning plays an important role in stabilizing nanostructure.

  11. Laser annealing and defect study of chalcogenide photovoltaic materials

    Science.gov (United States)

    Bhatia, Ashish

    Cu(In,Ga)Se2 (CIGSe), CuZnSn(S,Se)4(CZTSSe), etc., are the potential chalcogenide semiconductors being investigated for next-generation thin film photovoltaics (TFPV). While the champion cell efficiency of CIGSe has exceeded 20%, CZTSSe has crossed the 10% mark. This work investigates the effect of laser annealing on CISe films, and compares the electrical characteristics of CIGSe (chalcopyrite) and CZTSe (kesterite) solar cells. Chapter 1 through 3 provide a background on semiconductors and TFPV, properties of chalcopyrite and kesterite materials, and their characterization using deep level transient spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). Chapter 4 investigates electrochemical deposition (nonvacuum synthesis) of CISe followed by continuous wave laser annealing (CWLA) using a 1064 nm laser. It is found that CWLA at ≈ 50 W/cm2 results in structural changes without melting and dewetting of the films. While Cu-poor samples show about 40% reduction in the full width at half maximum of the respective x-ray diffraction peaks, identically treated Cu-rich samples register more than 80% reduction. This study demonstrates that an entirely solid-phase laser annealing path exists for chalcopyrite phase formation and crystallization. Chapter 5 investigates the changes in defect populations after pulse laser annealing in submelting regime of electrochemically deposited and furnace annealed CISe films. DLTS on Schottky diodes reveal that the ionization energy of the dominant majority carrier defect state changes nonmonotonically from 215+/-10 meV for the reference sample, to 330+/-10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215+/-10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. Chapter 6 compares the electrical characteristics of chalcopyrite and kesterite materials. Experiments reveal CZTSe cell has an

  12. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  13. The Evolution of Defects in Deformed Cu-Ni-Si Alloys during Isochronal Annealing Studied by Positron Annihilation

    International Nuclear Information System (INIS)

    The effect of isochronal annealing on the deformation-induced defects in pure Cu and Cu-Ni-Si alloys is studied by positron annihilation spectroscopy. For the cold-rolled Cu, annealing up to 900°C causes a gradual recovery of the deformation-induced defects and monotonous decrease of the hardness. This indicates that its hardening is mainly related with defects such as dislocations. However, for the hot-rolled and quenched Cu-Ni-Si alloy, although there is a partial recovery of defects after annealing below 500°C, formation of additional defects is observed after annealing above 500°C. The hardness of Cu-Ni-Si alloy has a maximum value after annealing at 500°C, which suggests that the hardening of Cu-Ni-Si alloy is not due to defects, but primarily due to the precipitation formed during annealing. Further annealing of the Cu-Ni-Si alloy above 500°C results in over-aging effect and the precipitates lose coherence with the host matrix, which leads to positron trapping by vacancy clusters in the incoherent interface region

  14. Thermal annealing recovery of fracture toughness in HT9 steel after irradiation to high doses

    Science.gov (United States)

    Byun, Thak Sang; Baek, Jong-Hyuk; Anderoglu, Osman; Maloy, Stuart A.; Toloczko, Mychailo B.

    2014-06-01

    The HT9 ferritic/martensitic steel with a nominal chemistry of Fe(bal.)12%Cr1%MoVW has been used as a primary core material for fast fission reactors such as FFTF because of its high resistance to radiation-induced swelling and embrittlement. Both static and dynamic fracture test results have shown that the HT9 steel can become brittle when it is exposed to high dose irradiation at a relatively low temperature (toughness in the HT9 steel after irradiation up to 3148 dpa at 378504 °C. A specimen reuse technique has been established and applied to this study: the fracture specimens were tested Charpy specimens or broken halves of Charpy bars (13 × 3 × 4 mm). The post-anneal fracture test results indicated that much of the radiation-induced damage can be recovered by a simple thermal annealing schedule: the fracture toughness was incompletely recovered by 550 °C annealing, while nearly complete or complete recovery occurred after 650 °C annealing. This indicates that thermal annealing is a feasible damage mitigation technique for the reactor components made of HT9 steel. The partial recovery is probably due to the non-removable microstructural damages such as void or gas bubble formation, elemental segregation and precipitation.

  15. The annealing robust backpropagation (ARBP) learning algorithm.

    Science.gov (United States)

    Chuang, C C; Su, S F; Hsiao, C C

    2000-01-01

    Multilayer feedforward neural networks are often referred to as universal approximators. Nevertheless, if the used training data are corrupted by large noise, such as outliers, traditional backpropagation learning schemes may not always come up with acceptable performance. Even though various robust learning algorithms have been proposed in the literature, those approaches still suffer from the initialization problem. In those robust learning algorithms, the so-called M-estimator is employed. For the M-estimation type of learning algorithms, the loss function is used to play the role in discriminating against outliers from the majority by degrading the effects of those outliers in learning. However, the loss function used in those algorithms may not correctly discriminate against those outliers. In this paper, the annealing robust backpropagation learning algorithm (ARBP) that adopts the annealing concept into the robust learning algorithms is proposed to deal with the problem of modeling under the existence of outliers. The proposed algorithm has been employed in various examples. Those results all demonstrated the superiority over other robust learning algorithms independent of outliers. In the paper, not only is the annealing concept adopted into the robust learning algorithms but also the annealing schedule k/t was found experimentally to achieve the best performance among other annealing schedules, where k is a constant and is the epoch number. PMID:18249835

  16. Transient and residual stresses from multipass weld in very thick plates and their reduction from stress relief annealing

    International Nuclear Information System (INIS)

    An investigation into residual stresses induced in a connection of a pressure vessel by multipass welding and their reduction by stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analyses, the thermal elastic-plastic creep theory developed by the authors was applied and the results of the analysis show a good, fundamental coincidence with the experimental findings. Based on these results, the following items are discussed: the correlation between the welding residual stresses and delayed cracking; transient stresses and intermediate annealing; and conditions of annealing and reduction of the residual stresses

  17. Nonepitaxial growth of a (001) textured L10 Fe-Pt film in H2 and N2 annealing atmospheres

    Institute of Scientific and Technical Information of China (English)

    WU Peiwen; HU Xuerang; QIAN Jun; YUAN Jun

    2006-01-01

    A nonepitaxial (001) textured Fe-Pt alloyed film was obtained by annealing Fe/Pt multilayers in H2. No such nonepitaxial (001) texture was observed for similar multilayers annealed in N2 atmosphere. Sensitive electron energy loss spectroscopy and the left shift of the L10 FePt (111) diffraction peak indicate oxidation in the N2 annealed samples. The oxidation dramatically degrades the (001) texture of the Fe-Pt film and induces the composition change in the alloyed layer.The relation between the texture formation and oxidation was discussed.

  18. Changes of microstructure in {alpha}-AgZn during post-deformation annealing after cold-rolling

    Energy Technology Data Exchange (ETDEWEB)

    Migschitz, M.; Korner, A.; Pfeiler, W. [Univ. Wien, Vienna (Austria). Institut fuer Festkoerperphysik; Garlipp, W. [Universidade Estadual Paulista Julio de Mesquita Filho, Araraquara, Sao Paulo (Brazil). Instituto de Quimica

    1996-07-01

    The annealing processes of deformation-induced defects after cold-rolling to about 30 and 60% thickness reduction were investigated for Ag-21, 23, 28 at% Zn by means of residual electrical resistivity, microhardness, light microscopy and transmission electron microscopy (TEM). Three annealing stages have been detected and consistently interpreted as annealing-out of mainly point defects and their agglomerates (state 1), formation of dislocation cells and recrystallized strain-free grains (stage 2) and grain growth (stage 3). Further, it is tried to determine the evolution of defect production (point defects and dislocations) during rolling deformation from measured changes of electrical resistivity and microhardness.

  19. Effect of Annealing Temperature on the Performance of SnO2 Thin Film Transistors Prepared by Spray Pyrolysis.

    Science.gov (United States)

    Zhang, XinAn; Zhai, JunXia; Yu, XianKun; Zhu, RuiJuan; Zhang, WeiFeng

    2015-08-01

    We fabricated SnO2 thin film transistors on thermally oxidized p-type silicon substrates by low-cost spray pyrolysis. The effect of annealing temperatures on electrical characteristics of SnO2 thin film transistors were investigated. Thermal annealing at higher temperatures induced a negative shift of the threshold voltage (VT) and an increase in the saturation mobility. It was found that the device annealed at 450 °C exhibited a good electrical performance with the field-effect mobility of 0.19 cm2/Vs, the threshold voltage of 2.5 V, and the on/off current ratio of 10(3). PMID:26369222

  20. Computational multiqubit tunnelling in programmable quantum annealers

    Science.gov (United States)

    Boixo, Sergio; Smelyanskiy, Vadim N.; Shabani, Alireza; Isakov, Sergei V.; Dykman, Mark; Denchev, Vasil S.; Amin, Mohammad H.; Smirnov, Anatoly Yu; Mohseni, Masoud; Neven, Hartmut

    2016-01-01

    Quantum tunnelling is a phenomenon in which a quantum state traverses energy barriers higher than the energy of the state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational multiqubit tunnelling has not yet been observed, and a theory of co-tunnelling under high- and low-frequency noises is lacking. Here we show that 8-qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational primitive where classical paths are trapped in a false minimum. In support of the design of quantum annealers we develop a nonperturbative theory of open quantum dynamics under realistic noise characteristics. This theory accurately predicts the rate of many-body dissipative quantum tunnelling subject to the polaron effect. Furthermore, we experimentally demonstrate that quantum tunnelling outperforms thermal hopping along classical paths for problems with up to 200 qubits containing the computational primitive.

  1. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  2. Simulation of Storm Occurrences Using Simulated Annealing.

    Science.gov (United States)

    Lokupitiya, Ravindra S.; Borgman, Leon E.; Anderson-Sprecher, Richard

    2005-11-01

    Modeling storm occurrences has become a vital part of hurricane prediction. In this paper, a method for simulating event occurrences using a simulated annealing algorithm is described. The method is illustrated using annual counts of hurricanes and of tropical storms in the Atlantic Ocean and Gulf of Mexico. Simulations closely match distributional properties, including possible correlations, in the historical data. For hurricanes, traditionally used Poisson and negative binomial processes also predict univariate properties well, but for tropical storms parametric methods are less successful. The authors determined that simulated annealing replicates properties of both series. Simulated annealing can be designed so that simulations mimic historical distributional properties to whatever degree is desired, including occurrence of extreme events and temporal patterning.

  3. Stochastic annealing simulation of cascades in metals

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L.

    1996-04-01

    The stochastic annealing simulation code ALSOME is used to investigate quantitatively the differential production of mobile vacancy and SIA defects as a function of temperature for isolated 25 KeV cascades in copper generated by MD simulations. The ALSOME code and cascade annealing simulations are described. The annealing simulations indicate that the above Stage V, where the cascade vacancy clusters are unstable,m nearly 80% of the post-quench vacancies escape the cascade volume, while about half of the post-quench SIAs remain in clusters. The results are sensitive to the relative fractions of SIAs that occur in small, highly mobile clusters and large stable clusters, respectively, which may be dependent on the cascade energy.

  4. Extraordinary waves in two dimensional electron gas with separate spin evolution and Coulomb exchange interaction

    CERN Document Server

    Andreev, Pavel A

    2016-01-01

    Hydrodynamics analysis of waves in two-dimensional degenerate electron gas with the account of separate spin evolution is presented. The transverse electric field is included along with the longitudinal electric field. The Coulomb exchange interaction is included in the analysis. In contrast with the three-dimensional plasma-like mediums the contribution of the transverse electric field is small. We show the decrease of frequency of both the extraordinary (Langmuir) wave and the spin-electron acoustic wave due to the exchange interaction. Moreover, spin-electron acoustic wave has negative dispersion at the relatively large spin-polarization. Corresponding dispersion dependencies are presented and analyzed.

  5. The view of religions toward euthanasia and extraordinary treatments in Japan.

    Science.gov (United States)

    Tanida, N

    2000-01-01

    388 Japanese religious groups--143 Shinto, 157 Buddhist, 58 Christian and 30 others--were asked to answer questions regarding several forms of euthanasia and extraordinary treatment during the dying process. Passive euthanasia and indirect euthanasia were accepted by around 70% of the respondents. Active euthanasia was favored by less than 20% of them. Christians were less supportive of euthanasia than practitioners of other religions. Shinto and Buddhist corporations advocated "being natural," when medical treatment became futile at the terminal stage. Religionists' views may deepen the discussion of end-of-life issues. PMID:11933972

  6. Extraordinary sneeze: Spontaneous transmaxillary-transnasal discharge of a migrated dental implant.

    Science.gov (United States)

    Procacci, Pasquale; De Santis, Daniele; Bertossi, Dario; Albanese, Massimo; Plotegher, Cristina; Zanette, Giovanni; Pardo, Alessia; Nocini, Pier Francesco

    2016-08-16

    This case report describes an extraordinary case of the spontaneous transmaxillary-transnasal discharge of a dental implant, which occurred during a sneeze. The patient was complained of symptoms of acute sinusitis. She underwent a computed tomography scan that revealed a dental implant dislocated in the maxillary sinus. Medical treatment based on antibiotics and mucolytics was administered to the patient in order to prepare her for endoscopic endonasal surgery. The implant was spontaneously discharged two days after during a sneeze. Mucociliary clearance in combination with a local osteolytic inflammatory process and mucolytics therapy are the likely causes of this unusual discharge. PMID:27574611

  7. Feedback-optimized Extraordinary Optical Transmission of Continuous-variable Entangled States

    CERN Document Server

    Wang, Dong; Wang, Qianjin; Wu, Yang; Liu, Fang; Zhang, Yong; Xiao, Min

    2014-01-01

    We report on the feedback-optimized extraordinary optical transmission of continuous-variable entangled states through a hexagonal metal-hole array. The continuous-variable entanglements from a nondegenerate optical parametric amplifier are first demonstrated to survive after a photon-plasmon-photon conversion process. By controlling the reflected light from the metal-hole array, a significant enhancement of quantum correlations has then been experimentally achieved comparing to the case of without such coherent feedback control. This result presents a useful technique to efficiently recover the substantial reflective losses in the plasmonic circuits for quantum information processing.

  8. Giant acoustic concentration by extraordinary transmission in zero-mass metamaterials.

    Science.gov (United States)

    Park, Jong Jin; Lee, K J B; Wright, Oliver B; Jung, Myoung Ki; Lee, Sam H

    2013-06-14

    We demonstrate 97%, 89%, and 76% transmission of sound amplitude in air through walls perforated with subwavelength holes of areal coverage fractions 0.10, 0.03, and 0.01, respectively, producing 94-, 950-, and 5700-fold intensity enhancements therein. This remarkable level of extraordinary acoustic transmission is achieved with thin tensioned circular membranes, making the mass of the air in the holes effectively vanish. Imaging the pressure field confirms incident-angle independent transmission, thus realizing a bona fide invisible wall. Applications include high-resolution acoustic sensing. PMID:25165929

  9. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  10. Implementation of ordinary and extraordinary beams interference by application of diffractive optical elements

    Science.gov (United States)

    Khonina, S. N.; Karpeev, S. V.; Morozov, A. A.; Paranin, V. D.

    2016-07-01

    We apply diffractive optical elements in problems of transformation of Bessel beams in a birefringent crystal. Using plane waves expansion we show a significant interference between the ordinary and extraordinary beams due to the energy transfer in the orthogonal transverse components in the nonparaxial mode. A comparative analysis of the merits and lack of diffractive and refractive axicons in problems of formation non-paraxial Bessel beams has shown the preferability of diffractive optics application in crystal optics. The transformation of uniformly polarised Bessel beams in the crystal of Iceland spar in the nonparaxial mode by application of a diffractive axicon is investigated numerically and experimentally.

  11. Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

    KAUST Repository

    Sun, Jian

    2012-02-21

    A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

  12. SANS response of VVER440-type weld material after neutron irradiation, post-irradiation annealing and reirradiation

    OpenAIRE

    Ulbricht, Andreas; Bergner, Frank; Boehmert, Juergen; Valo, Matti; Mathon, Marie-Helene; Heinemann, Andre

    2007-01-01

    Abstract It is well accepted that the reirradiation behaviour of reactor pressure vessel (RPV) steel after annealing can be different from the original irradiation behaviour. We present the first small-angle neutron scattering (SANS) study of neutron irradiated, annealed and reirradiated VVER440-type RPV weld material. The SANS results are analysed both in terms of the size distribution of irradiation-induced defect/solute atom clusters and in terms of the ratio of total and nuclea...

  13. Infrared luminescence of annealed germanosilicate layers

    International Nuclear Information System (INIS)

    In the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using plasma enhanced chemical vapor deposition (PECVD) and post-annealed in nitrogen at temperatures between 600 and 1200 °C for as long as 2 h. Transmission electron microscopy (TEM), Raman scattering and photoluminescence spectroscopy (PL) has been used to characterize the samples both structurally and optically. Formation of Ge precipitates in the germanosilicate layers have been observed using Raman spectroscopy for a variety of PECVD growth parameters, annealing temperatures and times. Ge–Ge mode at ∼300 cm−1 is clearly observed at temperatures as low as 700 °C for annealing durations for 45 min. Raman results indicate that upon annealing for extended periods of time at temperatures above 900 °C; nanocrystals of few tens of nanometers in diameter inside the oxide matrix and precipitation and interdiffusion of Ge, forming SiGe alloy at the silicon and oxide interface take place. Low temperature PL spectroscopy has been used to observe luminescence from these samples in the vicinity of 1550 nm, an important wavelength for telecommunications. Observed luminescence quenches at 140 K. The photoluminescence data displays three peaks closely interrelated at approximately 1490, 1530 and 1610 nm. PL spectra persist even after removing the oxide layer indicating that the origin of the infrared luminescent centers are not related to the Ge nanocrystals in the oxide layer. -- Highlights: • Nanostructures of Ge formed by precipitation of germanium in PECVD grown germanosilicate films were studied. • We have fabricated SiOx:Ge thin films using PECVD. • Annealing of SiOx:Ge films result in of formation of Ge nanocrystals and SiGe alloy the oxide Si interface. • Low temperature photoluminescence around 1500 nm has been indentified as Ge islands

  14. Infrared luminescence of annealed germanosilicate layers

    Energy Technology Data Exchange (ETDEWEB)

    Tokay, M.S. [Department of Physics, Kırıkkale University, 71450 Kırıkkale (Turkey); Yasar, E., E-mail: erdemyasar@kku.edu.tr [Department of Physics, Kırıkkale University, 71450 Kırıkkale (Turkey); Ağan, S. [Department of Physics, Kırıkkale University, 71450 Kırıkkale (Turkey); Aydınlı, A. [Department of Physics, Bilkent University, 06800 Ankara (Turkey)

    2014-03-15

    In the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using plasma enhanced chemical vapor deposition (PECVD) and post-annealed in nitrogen at temperatures between 600 and 1200 °C for as long as 2 h. Transmission electron microscopy (TEM), Raman scattering and photoluminescence spectroscopy (PL) has been used to characterize the samples both structurally and optically. Formation of Ge precipitates in the germanosilicate layers have been observed using Raman spectroscopy for a variety of PECVD growth parameters, annealing temperatures and times. Ge–Ge mode at ∼300 cm{sup −1} is clearly observed at temperatures as low as 700 °C for annealing durations for 45 min. Raman results indicate that upon annealing for extended periods of time at temperatures above 900 °C; nanocrystals of few tens of nanometers in diameter inside the oxide matrix and precipitation and interdiffusion of Ge, forming SiGe alloy at the silicon and oxide interface take place. Low temperature PL spectroscopy has been used to observe luminescence from these samples in the vicinity of 1550 nm, an important wavelength for telecommunications. Observed luminescence quenches at 140 K. The photoluminescence data displays three peaks closely interrelated at approximately 1490, 1530 and 1610 nm. PL spectra persist even after removing the oxide layer indicating that the origin of the infrared luminescent centers are not related to the Ge nanocrystals in the oxide layer. -- Highlights: • Nanostructures of Ge formed by precipitation of germanium in PECVD grown germanosilicate films were studied. • We have fabricated SiOx:Ge thin films using PECVD. • Annealing of SiOx:Ge films result in of formation of Ge nanocrystals and SiGe alloy the oxide Si interface. • Low temperature photoluminescence around 1500 nm has been indentified as Ge

  15. Quantum annealing correction with minor embedding

    Science.gov (United States)

    Vinci, Walter; Albash, Tameem; Paz-Silva, Gerardo; Hen, Itay; Lidar, Daniel A.

    2015-10-01

    Quantum annealing provides a promising route for the development of quantum optimization devices, but the usefulness of such devices will be limited in part by the range of implementable problems as dictated by hardware constraints. To overcome constraints imposed by restricted connectivity between qubits, a larger set of interactions can be approximated using minor embedding techniques whereby several physical qubits are used to represent a single logical qubit. However, minor embedding introduces new types of errors due to its approximate nature. We introduce and study quantum annealing correction schemes designed to improve the performance of quantum annealers in conjunction with minor embedding, thus leading to a hybrid scheme defined over an encoded graph. We argue that this scheme can be efficiently decoded using an energy minimization technique provided the density of errors does not exceed the per-site percolation threshold of the encoded graph. We test the hybrid scheme using a D-Wave Two processor on problems for which the encoded graph is a two-level grid and the Ising model is known to be NP-hard. The problems we consider are frustrated Ising model problem instances with "planted" (a priori known) solutions. Applied in conjunction with optimized energy penalties and decoding techniques, we find that this approach enables the quantum annealer to solve minor embedded instances with significantly higher success probability than it would without error correction. Our work demonstrates that quantum annealing correction can and should be used to improve the robustness of quantum annealing not only for natively embeddable problems but also when minor embedding is used to extend the connectivity of physical devices.

  16. Influences of hydrogen-induced amorphization and annealing treatment on gaseous hydrogen storage properties of La{sub 1−x}Pr{sub x}MgNi{sub 3.6}Co{sub 0.4} (x = 0–0.4) alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, Tingting [Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081 (China); College of Science, Northeastern University, Shenyang 110819 (China); Yang, Tai; Yuan, Zeming; Xu, Sheng; Bu, Wengang [Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081 (China); Qi, Yang [College of Science, Northeastern University, Shenyang 110819 (China); Zhang, Yanghuan, E-mail: zhangyh59@sina.com [Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081 (China); Key Laboratory of Integrated Exploitation of Baiyun Obo Multi-Metal Resources, Inner Mongolia University of Science and Technology, Baotou 014010 (China)

    2015-08-05

    Highlights: • The La–Mg–Ni-based AB{sub 2}-type alloys were prepared by casting. • La was substituted by a small amount of Pr in the experimental alloys. • The hydrogen absorption/desorption cycling properties of the alloys were studied. • The influences of hydrogen-induced amorphization were investigated in details. • The annealing treatment was applied to recover hydrogen storage capacity. - Abstract: La{sub 1−x}Pr{sub x}MgNi{sub 3.6}Co{sub 0.4} (x = 0–0.4) alloys are prepared by vacuum induction melting. The phase composition and microstructure of the as-cast alloys is characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The gaseous hydrogen absorption capacity of the alloys was measured by an automatically controlled Sieverts apparatus. The results indicate that the as-cast alloys consist of two phases of LaMgNi{sub 4} and LaNi{sub 5}. The maximum gaseous hydrogen storage capacity of the La{sub 1−x}Pr{sub x}MgNi{sub 3.6}Co{sub 0.4} (x = 0–0.4) alloys is 1.768, 1.745, 1.721, 1.681 and 1.653 wt%, respectively, under 3 MPa H{sub 2} at 373 K. But the hydrogen storage capacity after 20 cycles decays off to 0.746, 0.843, 0.947, 1.003 and 1.10 wt%, respectively. In order to reveal the mechanism of rapid degradation of the capacity, the structures of the alloys before and after hydrogen absorption/desorption cycle were analyzed. SEM observation displays that the micro-cracks can be clearly seen on the surface of the alloy particles after 20 cycles. XRD detection finds that the repeated hydrogen absorption/desorption cycles give rise to a obvious broadening of the diffraction peaks of the alloys, exhibiting a typical amorphous structure, which is termed as hydrogen-induced amorphization. The La{sub 1−x}Pr{sub x}MgNi{sub 3.6}Co{sub 0.4} (x = 0–0.4) alloys after 20 cycles were annealed at 623 K for 8 h, finding that the hydrogen storage capacity of the alloys recovers to 1.348, 1.365, 1.50, 1.485 and 1.30 wt

  17. Annealing Increases Stability Of Iridium Thermocouples

    Science.gov (United States)

    Germain, Edward F.; Daryabeigi, Kamran; Alderfer, David W.; Wright, Robert E.; Ahmed, Shaffiq

    1989-01-01

    Metallurgical studies carried out on samples of iridium versus iridium/40-percent rhodium thermocouples in condition received from manufacturer. Metallurgical studies included x-ray, macroscopic, resistance, and metallographic studies. Revealed large amount of internal stress caused by cold-working during manufacturing, and large number of segregations and inhomogeneities. Samples annealed in furnace at temperatures from 1,000 to 2,000 degree C for intervals up to 1 h to study effects of heat treatment. Wire annealed by this procedure found to be ductile.

  18. Effect of chemical ordering annealing on martensitic transformation and superelasticity in polycrystalline Ni–Mn–Ga microwires

    International Nuclear Information System (INIS)

    Highlights: • Chemical ordering annealing on Ni–Mn–Ga microwires was found to reduce the defect density and internal stress. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to increase the MT temperatures, Curie point and saturation magnetization. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to decrease the SIM stress and improve the superelastic reversibility. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to weaken the temperature dependences of the superelastic stresses. - Abstract: Polycrystalline Ni–Mn–Ga microwires of diameter 30–80 μm were prepared by melt-extraction technique on a large scale. The rapidly solidified microwires exhibit a fairly high ductility and excellent shape memory property. Here, with the aim to reduce the defect density, internal stress and compositional inhomogeneity in the as-extracted microwires, a stepwise chemical ordering annealing heat treatment was carried out and the effect of annealing on martensitic transformation, magnetic properties and superelastic behavior were investigated. The results indicate that annealing increase the transformation temperature and decrease the transformation hysteresis. These are related to composition homogenization, increase of atomic ordering and decrease in internal stress and defects. During mechanical tests, the stress-induced martensite (SIM) formation took place at a much lower stress after annealing treatment. The annealed microwires also demonstrate a lower superelastic hysteresis and a higher recovery rate compared to the as-extracted microwires. The temperature dependence of SIM stress is weaker after annealing, which is related to the enthalpy change (ΔH) and phase transformation temperature change according to the Clausius–Clapeyron relation

  19. Effect of chemical ordering annealing on martensitic transformation and superelasticity in polycrystalline Ni–Mn–Ga microwires

    Energy Technology Data Exchange (ETDEWEB)

    Qian, M.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Advanced Composites Centre for Innovation and Science (ACCIS), University of Bristol, Queen’s Building, University Walk, Bristol BS8 1TR (United Kingdom); Zhang, X.X., E-mail: xxzhang@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wei, L.S.; Geng, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Peng, H.X., E-mail: hxpengwork@zju.edu.cn [Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2015-10-05

    Highlights: • Chemical ordering annealing on Ni–Mn–Ga microwires was found to reduce the defect density and internal stress. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to increase the MT temperatures, Curie point and saturation magnetization. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to decrease the SIM stress and improve the superelastic reversibility. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to weaken the temperature dependences of the superelastic stresses. - Abstract: Polycrystalline Ni–Mn–Ga microwires of diameter 30–80 μm were prepared by melt-extraction technique on a large scale. The rapidly solidified microwires exhibit a fairly high ductility and excellent shape memory property. Here, with the aim to reduce the defect density, internal stress and compositional inhomogeneity in the as-extracted microwires, a stepwise chemical ordering annealing heat treatment was carried out and the effect of annealing on martensitic transformation, magnetic properties and superelastic behavior were investigated. The results indicate that annealing increase the transformation temperature and decrease the transformation hysteresis. These are related to composition homogenization, increase of atomic ordering and decrease in internal stress and defects. During mechanical tests, the stress-induced martensite (SIM) formation took place at a much lower stress after annealing treatment. The annealed microwires also demonstrate a lower superelastic hysteresis and a higher recovery rate compared to the as-extracted microwires. The temperature dependence of SIM stress is weaker after annealing, which is related to the enthalpy change (ΔH) and phase transformation temperature change according to the Clausius–Clapeyron relation.

  20. Improved thermal and strain performance of annealed polymer optical fiber Bragg gratings

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Stefani, Alessio; Bache, Morten;

    2011-01-01

    We report on a detailed study of the inscription and characterization of fiber Bragg gratings (FBGs) in commercial step index polymer optical fibers (POFs). Through the growth dynamics of the gratings, we identify the effect of UV-induced heating during the grating inscription. We found that FBGs...... in annealed commercial POFs can offer more stable short-term performance at both higher temperature and larger strain. Furthermore, the FBGs' operational temperature and strain range without hysteresis was extended by the annealing process. We identified long-term stability problem of even the...

  1. Influence of Annealing on the Grain Growth and Thermal Diffusivity of Nanostructured YSZ Thermal Barrier Coating

    Institute of Scientific and Technical Information of China (English)

    Na WANG; Chungen ZHOU; Shengkai GONG; Huibin XU

    2006-01-01

    The nanostructured zirconia coatings were deposited by atmospherically plasma spraying. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction were used to investigate the microstructure of the zirconia coatings. Thermal diffusivity values at normal temperatures have been evaluated by laser flash technique. Effect of annealing on the microstructure evolution of the zirconia coating has been performed. The grains and thermal diffusivity are increased with increasing annealing time and temperature.The grain growth is according to the GRIGC (the grain rotation induced grain coalescence) mechanism. The increase in thermal diffusivity is attributed to the grain growth and the decrease in porosity of nanostructured zirconia coatings.

  2. Effect of α-damage on fission-track annealing in zircon

    Science.gov (United States)

    Kasuya, Masao; Naeser, Charles W.

    1988-01-01

    The thermal stability of confined fission-track lengths in four zircon samples having different spontaneous track densities (i.e., different amounts of ??-damage) has been studied by one-hour isochronal annealing experiments. The thermal stability of spontaneous track lengths is independent of initial spontaneous track density. The thermal stability of induced track lengths in pre-annealed zircon, however, is significantly higher than that of spontaneous track lengths. The results indicate that the presence of ??-damage lowers the thermal stability of fission-tracks in zircon.

  3. Insights into fractal feature evolution from Au/Ge thin films after annealing

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.W.; Zhang, S.Y.; Tan, S.; Hou, J.G. [Structure Research Laboratory, University of Science and Technology of China, Hefei, 230026, Anhui (China); Wu, Z.Q. [Fundamental Physics Center, University of Science and Technology of China, Hefei, 230026, Anhui (China)

    2004-03-01

    We report a perplexing behavior of fractal shape transition that results from a change in the annealing temperature and time or the film thickness ratio. We find that a compact-to-open fractal shape transition can be induced by increasing the annealing temperature and time or decreasing the thickness ratio of the Au and Ge films. This behavior is not completely consistent with what is predicted by theories based on diffusion-limited aggregation and previous experimental observations. In this new system, we find that fractal shape transitions are truly dominated by the random-successive nucleation and growth mechanism. (orig.)

  4. An exploratory study into the effects of extraordinary nature on emotions, mood, and prosociality

    Directory of Open Access Journals (Sweden)

    Yannick eJoye

    2015-01-01

    Full Text Available Environmental psychology research has demonstrated that exposure to mundane natural environments can be psychologically beneficial, and can, for instance, improve individuals’ mood and concentration. However, little research has yet examined the psychological benefits of extraordinary, awe-evoking kinds of nature, such as spectacular mountain scenes or impressive waterfalls. In this study, we aimed to address the underrepresentation of such extraordinary nature in research on human – nature interactions. Specifically, we examined whether watching a picture slideshow of awesome as opposed to mundane nature differentially affected individuals’ emotions, mood, social value orientation, and their willingness to donate something to others. Our analyses revealed that, compared to mundane nature and a neutral condition, watching awesome natural scenes and phenomena had some unique and pronounced emotional effects (e.g., feeling small and humble, triggered the most mood improvement, and led to a more prosocial social value orientation. We found that participants’ willingness to donate did not differ significantly for any of the conditions.

  5. Development of titania nanotube arrays: The roles of water content and annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Ratnawati, E-mail: rnwt63@yahoo.co.id [Chemical Engineering Department, Faculty of Engineering, Universitas Indonesia, Depok 16424 (Indonesia); Chemical Engineering Department, Institut Teknologi Indonesia, Tangerang Selatan 15320 (Indonesia); Gunlazuardi, Jarnuzi, E-mail: jarnuzi@ui.ac.id [Chemistry Department, Faculty of Mathematics and Science, Universitas Indonesia, Depok 16424 (Indonesia); Slamet, E-mail: slamet@che.ui.ac.id [Chemical Engineering Department, Faculty of Engineering, Universitas Indonesia, Depok 16424 (Indonesia)

    2015-06-15

    The effect of water content in the electrolyte solution during annealing process in the synthesis and modification of titania nanotube arrays (TNTAs) by anodic oxidation process has been investigated. Variations in annealing technique that leading to some specific properties of the TNTAs produced have been examined. Doped-TNTAs were obtained by the in-situ anodic oxidation method in glycerol containing fluoride solution followed by annealing to induce crystallization. FESEM and SEM results indicated that TNTAs with inner diameters of 49–80 nm, wall thicknesses from 28 to 42 nm and lengths from 1407 to 1570 nm were synthesized. At water content of 25 v% in the electrolyte solution, self-organized with vertical, ordered of TNTAs with relatively uniform diameter was observed. Suitable morphology of TNTAs such as well developed tubes, vertically oriented, highly ordered, long with optimal diameter and wall thickness of TNTAs could suppress recombination of electrons–holes and, therefore, increase photoelectrochemical properties. Annealing with H{sub 2}/Ar is found to be efficient for introducing dopant C and N into the lattice of TNTAs to form Ti–O–C and N–Ti–O (FTIR analysis). Therefore, the reducing band gap can be obtained (UV–Vis DRS analysis). Annealing under H{sub 2}/Ar of as-synt TNTAs with water content of 25 v% in the electrolyte solution produced anatase phase (XRD analysis) and showed optimal condition in producing the highest photocurrent density. - Highlights: • Water content of 25 v%, annealing with 20% H{sub 2} produced highest photocurrent of TNTAs. • Vertically oriented, long with optimal wall thickness of TNTAs increase photocurrent. • Annealing with H{sub 2}/Ar plays an effective role in reducing the band gap.

  6. Topologically Ordered Graph Clustering via Deterministic Annealing

    OpenAIRE

    Rossi, Fabrice; Villa-Vialaneix, Nathalie

    2009-01-01

    This paper proposes an organized generalization of Newman and Girvan's modularity measure for graph clustering. Optimized via a deterministic annealing scheme, this measure produces topologically ordered graph partitions that lead to faithful and readable graph representations on a 2 dimensional SOM like planar grid.

  7. Hierarchical Network Design Using Simulated Annealing

    DEFF Research Database (Denmark)

    Thomadsen, Tommy; Clausen, Jens

    2002-01-01

    networks are described and a mathematical model is proposed for a two level version of the hierarchical network problem. The problem is to determine which edges should connect nodes, and how demand is routed in the network. The problem is solved heuristically using simulated annealing which as a sub...

  8. Interference Alignment Using Variational Mean Field Annealing

    DEFF Research Database (Denmark)

    Badiu, Mihai Alin; Guillaud, Maxime; Fleury, Bernard Henri

    2014-01-01

    We study the problem of interference alignment in the multiple-input multiple- output interference channel. Aiming at minimizing the interference leakage power relative to the receiver noise level, we use the deterministic annealing approach to solve the optimization problem. In the corresponding...

  9. Thermal annealing in neutron-irradiated tribromobenzenes

    DEFF Research Database (Denmark)

    Siekierska, K.E.; Halpern, A.; Maddock, A. G.

    1968-01-01

    The distribution of 82Br among various products in neutron-irradiated isomers of tribromobenzene has been investigated, and the effect of thermal annealing examined. Reversed-phase partition chromatography was employed for the determination of radioactive organic products, and atomic bromine in the...

  10. Positron prevacancy effects in pure annealed metals

    International Nuclear Information System (INIS)

    The low-temperature prevacancy effects sometimes observed with positrons in well-annealed high-purity metals are discussed. It is shown that these effects are not experimental artifacts, but are due to trapping of the positrons. It is suggested that dislocations are responsible for these trapping effects. 46 references, 5 figures

  11. Annealing Ni nanocrystalline on WC-Co

    International Nuclear Information System (INIS)

    The effects of annealing temperature on nanocrystalline sputter-deposited Ni thin films (500 nm) deposited on WC-Co (4 wt.%) were investigated. Special attention was focused on quantitative evaluation of residual stress and Ni diffusion into the WC-Co, after heat treatment, from 873 to 1273 K. The estimated level of residual stress, as measured by X-ray diffraction, is around -1.3 ± 0.1 GPa for the as-deposited film, whereas after annealing at 1273 K it decreases significantly. Atomic force microscopy shows that high annealing temperature results into an exponential increase of the roughness. An intermixing between the nanocrystalline Ni and the Co from WC substrate occurs, as it is revealed by quantitative depth-resolved Rutherford backscattering spectrometry analysis and also supported by X-ray photoelectron spectroscopy. We ascribe a significant stress relief with the increasing annealing temperature to the diffusion process. The understanding of this process is particularly important in WC-Co parts with the surface treated with Ni in order to improve the maximum surface service temperature.

  12. Annealing Ni nanocrystalline on WC-Co

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, C.M.; Guisbiers, G.; Pereira, S. [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Barradas, N.P.; Alves, E. [Nuclear and Technological Institute, E.N. 10, 2686-953 Sacavem (Portugal); Senos, A.M.R., E-mail: anamor@ua.p [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Vieira, M.T. [Mechanical Engineering Department, ICEMS, Polo II, 3030-201 Coimbra (Portugal)

    2009-08-12

    The effects of annealing temperature on nanocrystalline sputter-deposited Ni thin films (500 nm) deposited on WC-Co (4 wt.%) were investigated. Special attention was focused on quantitative evaluation of residual stress and Ni diffusion into the WC-Co, after heat treatment, from 873 to 1273 K. The estimated level of residual stress, as measured by X-ray diffraction, is around -1.3 +- 0.1 GPa for the as-deposited film, whereas after annealing at 1273 K it decreases significantly. Atomic force microscopy shows that high annealing temperature results into an exponential increase of the roughness. An intermixing between the nanocrystalline Ni and the Co from WC substrate occurs, as it is revealed by quantitative depth-resolved Rutherford backscattering spectrometry analysis and also supported by X-ray photoelectron spectroscopy. We ascribe a significant stress relief with the increasing annealing temperature to the diffusion process. The understanding of this process is particularly important in WC-Co parts with the surface treated with Ni in order to improve the maximum surface service temperature.

  13. Understanding the ordering mechanisms of self-assembled nanostructures of block copolymers during zone annealing.

    Science.gov (United States)

    Cong, Zhinan; Zhang, Liangshun; Wang, Liquan; Lin, Jiaping

    2016-03-21

    A theoretical method based on dynamic version of self-consistent field theory is extended to investigate directed self-assembly behaviors of block copolymers subjected to zone annealing. The ordering mechanisms and orientation modulation of microphase-separated nanostructures of block copolymers are discussed in terms of sweep velocity, wall preference, and Flory-Huggins interaction parameter. The simulated results demonstrate that the long-range ordered nanopatterns are achieved by lowering the sweep velocity of zone annealing due to the incorporation of templated ordering of block copolymers. The surface enrichment by one of the two polymer species induces the orientation modulation of defect-free nanostructures through finely tuning the composition of block copolymers and the preference of walls. Additionally, the Flory-Huggins interaction parameters of block copolymers in the distinct regions are main factors to design the zone annealing process for creating the highly ordered nanostructures with single orientation. PMID:27004895

  14. Effects of annealing on the ripple texture and mechanical properties of suspended bilayer graphene

    International Nuclear Information System (INIS)

    Periodic ripples of amplitude ∼15 nm were formed in suspended bilayer graphene after nanoindentation with incremental forces up to 600 nN. The structure was annealed at ∼620 K in high vacuum and the corresponding modifications in the mechanical properties and surface morphology were investigated. The pre-tension of the pristine sample was found to be 1.46 N m−1 and after annealing it was reduced to 0.72 N m−1. The nanometre-sized ripples induced by mechanical excitation were found to be flattened after annealing. Tailoring surface corrugations in bilayer graphene through nanoindentation and thermal engineering of these ripples thus provides an innovative fabrication route for flexible electronic devices and strain sensors. (paper)

  15. Investigation of the effects of substrate annealing on the properties of polymer blends

    International Nuclear Information System (INIS)

    In this manuscript, we investigated the effect of substrate annealing prior to the deposition of the active layer on the morphological, structural and opto-electrical properties of two variations of organic polymer blends of poly (3-hexylthiophene):C60 fullerene and poly (3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester films using atomic force microscopy, field emission scanning microscopy, x-ray diffraction and Hall effect measurements. P3HT films deposited on pre-annealed substrates exhibit an enhancement in the crystallization, and an increase in the electrical conductivity and Hall mobility of p-type P3HT. The microscopic morphology reveals self-assembled fibrillar structures due to the suppressed growth of fullerenes clusters induced by the controlled evaporation rate of the solvent. It is proposed that pre-substrate annealing controls the crystallization of P3HT, the phase separation and diffusion of the acceptor material (C60 or PCBM).

  16. Effects of mechanical grinding and low temperature annealing on crystal structure of Er5Si4

    International Nuclear Information System (INIS)

    Highlights: ► Impurity phases exist in orthorhombic Er5Si4:monoclinic 5:4, 1:1 and 5:3. ► Mechanical grinding induces transition from orthorhombic 5:4 to monoclinic 5:4. ► Low temperature annealing reverses the monoclinic 5:4 to orthorhombic 5:4. -- Abstract: The effect of mechanical grinding and subsequent low temperature annealing on the orthorhombic to monoclinic structural transition in the Er5Si4 compound was studied by X-ray powder diffraction using both a conventional laboratory Cu Kα1 radiation and a high-energy synchrotron source. A reversible phase transition from the orthorhombic to monoclinic structure occurs as a result of mechanical grinding. Low temperature annealing reverses the transformation and converts the formed monoclinic phase back to the orthorhombic, evidently by relieving residual stress introduced during the grinding

  17. Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

    Directory of Open Access Journals (Sweden)

    Tian Yuan

    2016-01-01

    Full Text Available N-type InGaN/GaN multiple-quantum-wells (MQWs were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD. The crystal quality and optical properties of samples after rapid thermal annealing (RTA at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD and photoluminescence (PL spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.

  18. Structural relaxation of amorphous silicon carbide thin films in thermal annealing

    International Nuclear Information System (INIS)

    Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 deg. C or 1100 deg. C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied

  19. Understanding the ordering mechanisms of self-assembled nanostructures of block copolymers during zone annealing

    Science.gov (United States)

    Cong, Zhinan; Zhang, Liangshun; Wang, Liquan; Lin, Jiaping

    2016-03-01

    A theoretical method based on dynamic version of self-consistent field theory is extended to investigate directed self-assembly behaviors of block copolymers subjected to zone annealing. The ordering mechanisms and orientation modulation of microphase-separated nanostructures of block copolymers are discussed in terms of sweep velocity, wall preference, and Flory-Huggins interaction parameter. The simulated results demonstrate that the long-range ordered nanopatterns are achieved by lowering the sweep velocity of zone annealing due to the incorporation of templated ordering of block copolymers. The surface enrichment by one of the two polymer species induces the orientation modulation of defect-free nanostructures through finely tuning the composition of block copolymers and the preference of walls. Additionally, the Flory-Huggins interaction parameters of block copolymers in the distinct regions are main factors to design the zone annealing process for creating the highly ordered nanostructures with single orientation.

  20. Studies of defects and annealing behavior of silicon irradiated with 70 MeV 56Fe ions

    International Nuclear Information System (INIS)

    The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 1012 and 5 x 1014 ions cm-2 were investigated by high resolution X-ray diffraction (HRXRD), electron spin resonance (ESR) and current-voltage measurements. The irradiated samples were isochronally annealed in nitrogen ambient up to 973 K for 2 min using the rapid thermal annealing (RTA) system. The screw dislocation density of the annealed sample (5 x 1014 ions cm-2) estimated at each stage of annealing from the broadening of the HRXRD peak was observed to change from 8.70 x 107 to 1.58 x 107 cm-2 with increasing temperatures. The strain and stress parameters estimated at each stage of annealing using the FWHM of ω-scan clearly indicate relative trend towards the un-irradiated silicon sample. The electron spin resonance studies indicate the presence of the dangling bond state of silicon (Si≡Si) and complex defects. The annealing at 873 K was found to be sufficient for complete removal of the defect centers induced due to irradiation. The I-V studies performed on the irradiated samples before and after annealing indicate that the defects created as a consequence of irradiation trap the charge carriers

  1. Effects of annealing temperature on the magnetoresistance in Ta/NiFe/Ta films by ZnO intercalations

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) exhibiting many superior physical properties was inserted into the Ta/NiFe/Ta films as nano-oxide intercalations. Different annealing temperatures and ZnO thickness significantly affected the magnetoresistance (MR) in NiFe films. The 4-nm thick ZnO film annealed at 200 °C had a MR of 2.41%, which was more than 70% higher than that of the 1-nm thick ZnO annealed film (MR=1.40%). However, the further increase in annealing temperature to 300 °C rapidly deteriorated the MR performance of the films. Diffusion and interface reactions occur between the crystal ZnO and the adjacent NiFe layer. Lower-temperature annealing improved the interface, increasing the specular reflection of spin-polarized electrons to some extent. However, higher-temperature annealing induced severe diffusion and interface reactions, which led to a sharp decline in MR performance. - Highlights: • Combining NiFe with ZnO, thereby producing NiFe/ZnO interfaces. • Investigating the effects of annealing temperatures on the magnetoresistance. • Explaining the corresponding relationship between MR and microstructure

  2. Effects of annealing temperature on the magnetoresistance in Ta/NiFe/Ta films by ZnO intercalations

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lei, E-mail: Lding@hainu.edu.cn [Key Laboratory of Advanced Materials of Tropical Island Resources, Ministry of Education, Hainan University, Haikou 570228 (China); Yu, Guang-hua; Zhang, Min; Zhao, Chong-jun; Teng, Jiao [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Xiang, Dao-ping [Key Laboratory of Advanced Materials of Tropical Island Resources, Ministry of Education, Hainan University, Haikou 570228 (China)

    2015-09-01

    Zinc oxide (ZnO) exhibiting many superior physical properties was inserted into the Ta/NiFe/Ta films as nano-oxide intercalations. Different annealing temperatures and ZnO thickness significantly affected the magnetoresistance (MR) in NiFe films. The 4-nm thick ZnO film annealed at 200 °C had a MR of 2.41%, which was more than 70% higher than that of the 1-nm thick ZnO annealed film (MR=1.40%). However, the further increase in annealing temperature to 300 °C rapidly deteriorated the MR performance of the films. Diffusion and interface reactions occur between the crystal ZnO and the adjacent NiFe layer. Lower-temperature annealing improved the interface, increasing the specular reflection of spin-polarized electrons to some extent. However, higher-temperature annealing induced severe diffusion and interface reactions, which led to a sharp decline in MR performance. - Highlights: • Combining NiFe with ZnO, thereby producing NiFe/ZnO interfaces. • Investigating the effects of annealing temperatures on the magnetoresistance. • Explaining the corresponding relationship between MR and microstructure.

  3. Multipass welding stresses in very thick plates and their reduction from stress relief annealing

    International Nuclear Information System (INIS)

    An investigation into residual stresses induced in a connection of a pressure vessel by multipass welding and their reduction by stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analyses, the thermal elastic-plastic creep theory developed by the authors was applied and the results of the analysis show a good, fundamental coincidence with the experimental findings. The outline of the results and the conclusions is as follows. (1) The largest transverse transient stress (sigma x) during welding always appears just below the weld metal of the newest layer. But as the layers of weld metal are piled up, this stress is relieved gradually. This implies that the application of intermediate annealing for the sole purpose on reducing welding residual stresses is unnecessary. (2) In the welding residual stress (sigma x) distribution, the location of the largest tensile stress is just below the finishing bead. Judging from the residual stresses and available information about cracks in actual structures, delayed cracks do not initiate at the toe of weld on the surface, but do initiate several layers below it. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature in the case of comparatively low heating rate for annealing. (auth.)

  4. AFM, XRD and HRTEM Studies of Annealed FePd Thin Films

    International Nuclear Information System (INIS)

    Ferromagnetic FePd L10 ordered alloys are highly expected as forthcoming high-density recording materials, because they reveal a large perpendicular magnetocrystalline anisotropy. The value of the magnetic anisotropy of FePd alloy strongly depends on the alloy composition, degree of alloy order as well as on the crystallographic grain orientation. In particular, to obtain the perpendicular anisotropy, it is necessary to get the films with (001) texture. One of the successful methods, which allows one to obtain highly ordered alloy, is a subsequent deposition of Fe and Pd layers, followed by an annealing at high temperature. This paper presents the study of the FePd thin alloy film structure changing in the result of high temperature annealing. During the annealing in high vacuum, the measurements of electrical resistance were performed, indicating the regions of different structure evolution. Changes in the crystal structure and surface morphology induced by thermal treatment were investigated by X-ray diffraction, atomic force microscopy, as well as high resolution transmission electron microscopy and then compared with electrical resistivity measurement. The slow thermal annealing of the deposited layers leads to the formation of L10 ordered FePd alloy with preferred (111) grain orientation. After the annealing at the highest used temperature, the dewetting process was observed, resulting in a creation of well oriented, regular nanoparticles. (author)

  5. Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander

    2010-01-01

    Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

  6. Open-System Quantum Annealing in Mean-Field Models with Exponential Degeneracy*

    Science.gov (United States)

    Kechedzhi, Kostyantyn; Smelyanskiy, Vadim N.

    2016-04-01

    Real-life quantum computers are inevitably affected by intrinsic noise resulting in dissipative nonunitary dynamics realized by these devices. We consider an open-system quantum annealing algorithm optimized for such a realistic analog quantum device which takes advantage of noise-induced thermalization and relies on incoherent quantum tunneling at finite temperature. We theoretically analyze the performance of this algorithm considering a p -spin model that allows for a mean-field quasiclassical solution and, at the same time, demonstrates the first-order phase transition and exponential degeneracy of states, typical characteristics of spin glasses. We demonstrate that finite-temperature effects introduced by the noise are particularly important for the dynamics in the presence of the exponential degeneracy of metastable states. We determine the optimal regime of the open-system quantum annealing algorithm for this model and find that it can outperform simulated annealing in a range of parameters. Large-scale multiqubit quantum tunneling is instrumental for the quantum speedup in this model, which is possible because of the unusual nonmonotonous temperature dependence of the quantum-tunneling action in this model, where the most efficient transition rate corresponds to zero temperature. This model calculation is the first analytically tractable example where open-system quantum annealing algorithm outperforms simulated annealing, which can, in principle, be realized using an analog quantum computer.

  7. Effect of annealing on two different niobium-clad stainless steel PEMFC bipolar plate materials

    Institute of Scientific and Technical Information of China (English)

    Sung-Tae HONG; Dae-Wook KIM; Yong-Joo YOU; K.Scott WEIL

    2009-01-01

    Niobium (Nb)-clad stainless steels(SS) produced via roll bonding are being considered for use in the bipolar plates of polymer electrolyte membrane fuel celI(PEMFC) stacks. Because the roll bonding process induces substantial work hardening in the constituent materials, thermal annealing is used to restore ductility to the clad sheet so that it can be subsequently blanked, stamped and dimpled in forming the final plate component. Two roll bonded materials, niobium clad 340L stainless steel (Nb/340L SS) and niobium clad 434 stainless steel (Nb/434 SS) were annealed under optimized conditions prescribed by the cladding manufacturer. Comparative mechanical testing conducted on each material before and after annealing shows significant improvement in ductility in both cases. However, corresponding microstructural analyses indicate an obvious difference between the two heat treated materials. During annealing, an interlayer with thick less than 1 μm forms between the constituent layers in the Nb/340L SS, whereas no interlayer is found in the annealed Nb/434 SS material. Prior work suggests that internal defects potentially can be generated in such an interlayer during metal forming operations. Thus, Nb/434 SS may be the preferred candidate material for this application.

  8. Effects of annealing on antiwear and antibacteria behaviors of TaN-Cu nanocomposite thin films

    International Nuclear Information System (INIS)

    TaN-Cu nanocomposite films were deposited by reactive cosputtering on Si and tool steel substrates. The films were then annealed using rapid thermal annealing (RTA) at 400 deg. C for 2, 4, and 8 min, respectively, to induce the nucleation and growth of Cu particles in TaN matrix and on film surface. Field emission scanning electron microscopy was applied to characterize Cu nanoparticles emerged on the surface of TaN-Cu thin films. The effects of annealing on the antiwear and antibacterial properties of these films were studied. The results reveal that annealing by RTA can cause Cu nanoparticles to form on the TaN surface. Consequently, the tribological behaviors, as well as the antibacterial behavior may vary depending on particle size, particle distribution, and total exposed Cu amount. For the samples with large Cu particles, the reduction of averaged friction and wear rate is obvious. Apparently, it is due to the smeared Cu particles adhered onto the wear tracks. This Cu layer may act as a solid lubricant. From the antibacterial testing results, it is found that both Cu particle size and total exposed Cu amount are critical in making short-term antibacterial effect. Overall, all the annealed TaN-Cu samples can reach >99% antibacterial efficiency in 24 h, with respect to uncoated Si substrate

  9. Effect of cold rolling and annealing on the grain refinement of low alloy steel

    International Nuclear Information System (INIS)

    A low alloy steel containing 0.06 wt percentage C, 1.5 wt percentage Mn and 0.1 wt percentage V was given 85 percentage cold rolling reduction. The aim of the rolling reduction was to induce energy due to stresses and distribution of carbides, used for grain refinement in subsequent annealing. The rolled specimens were heat treated at various temperatures from 590 Degree C to 650 Degree C for different lengths of soaking times ranging from five minutes to two hours, to promote the process of re-crystallization. At temperatures with long soaking times the re-crystallization process is expected to be completed with minimum of grain coarsening due to carbide distribution, especially vanadium carbides. A smooth drop in hardness with increase in annealing times was observed which may be due to recovery from stressed conditions during process of re-crystallization. Texture observations supported the re-crystallization process as the preferred orientation of (200) plane in rolled condition was successively reduced with annealing temperatures. Tensile properties observations of two hour annealing times at 590 Degree C to 650 Degree C clearly demonstrated that ductility increased at all annealing temperatures with maximum gain at 625 Degree C and strength is decreased. (author)

  10. Annealing studies on 23 GeV proton irradiated epitaxial silicon diodes

    International Nuclear Information System (INIS)

    Epitaxial (Epi) silicon is considered to be an option for sensors in high energy physics experiments at the super Large Hadron Collider due to its high radiation hardness. In order to understand the properties of such sensors and the radiation induced damage, we investigated standard epitaxial (Epi-St) and oxygen enriched epitaxial (Epi-Do) material with 100 and 150 μm thickness by Deep Level Transient Spectroscopy (DLTS). The irradiations were carried out at the PS at CERN with 23 GeV protons with fluences of 6.4.1011 cm-2. We performed macroscopic measurements like capacitance-voltage (CV) and current-voltage characteristics (IV) to obtain the sensor properties (depletion voltage, leakage current, effective doping concentration) and DLTS measurements in order to obtain the defect properties (defect concentration, cross section, activation energy). Isothermal annealing was performed at 80 C up to annealing times of 30 minutes followed by isochronal annealing up to 400 C. At low annealing temperatures, we found a correlation between two defect levels and the leakage current, while we followed the annealing out of the divacancy (V2) and the transformation into the x-defect at higher temperatures.

  11. Cauchy Annealing Schedule: An Annealing Schedule for Boltzmann Selection Scheme in Evolutionary Algorithms

    OpenAIRE

    Dukkipati, Ambedkar; Murty, Narasimha M; Bhatnagar, Shalabh

    2004-01-01

    Boltzmann selection is an important selection mechanism in evolutionary algorithms as it has theoretical properties which help in theoretical analysis. However, Boltzmann selection is not used in practice because a good annealing schedule for the `inverse temperature' parameter is lacking. In this paper we propose a Cauchy annealing schedule for Boltzmann selection scheme based on a hypothesis that selection-strength should increase as evolutionary process goes on and distance between two sel...

  12. Defect reduction in silicon nanocrystals by low-temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Niesar, Sabrina; Erhard, Nadine; Stegner, Andre R.; Brandt, Martin S.; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Pereira, Rui N. [University of Aveiro (Portugal); Wiggers, Hartmut [Institut fuer Verbrennung und Gasdynamik, Universitaet Duisburg-Essen, Duisburg (Germany)

    2010-07-01

    Due to the potential of low-cost solution processing, freestanding silicon nanocrystals (Si-ncs) are a promising base material for application e.g. in photovoltaics, thermoelectric and printable electronics. They can be synthesized in macroscopic amounts with diameters tunable between 4 and 50 nm by microwave-induced decomposition of silane in a low-pressure plasma reactor. In this work, we investigate different cost-efficient post-growth methods to reduce the number of silicon dangling bond defects (Si-dbs) which are a limiting factor for many electronic applications. Using electron paramagnetic resonance measurements, it is found that an etching step with hydrofluoric (HF) acid combined with a low-temperature vacuum annealing at 200 C leads to a reduction of the Si-dbs density by a factor of 10. Furthermore, conductivity measurements performed on thin Si-ncs films show that HF etching and annealing also improves the electronic properties. For highly doped Si-ncs, we observe a significant and persistent increase of the room-temperature conductivity. Moreover, current-voltage measurements on Si-ncs/organic semiconductor heterojunction solar cells are presented.

  13. Microstructure evolution of hot-rolled ODS steel during annealing

    International Nuclear Information System (INIS)

    Oxide Dispersion strengthened (ODS) steels have a great potential for high burn-up and high temperature applications. General requirements for cladding material are high resistances to irradiation-induced embrittlement, void swelling, and creep, as well as a good compatibility with the molten sodium. Creep resistance at high temperature is closely related to thermal stability of microstructure, and is also affected by crystallographic texture that developed during the thermo-mechanical processes. In general, fine grain structure impairs creep resistance and strong texture leads to mechanical anisotropy. The present work investigates effects of oxide particles on thermal stability of microstructure and texture of ferritic ODS steel. For this purpose, Fe-15Cr base ferritic steel and its ODS counterpart were produced based on powder metallurgy and their microstructure were compared. The oxide particles in 15Cr ODS steel are stable at annealing temperatures up to 1200 .deg. C. However, further increase in annealing temperature results in dissolution and coarsening of oxides particles, which in turn leads to rapid growth of grains. Therefore, it is concluded that the ODS steel should be processed at temperature below 1200 .deg. C to avoid dissolution and coarsening of finely-dispersed oxide particles, and thereby to minimize loss of strength

  14. Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

    International Nuclear Information System (INIS)

    The paper presents results of isothermal and isochronal annealing experiments on several types of gamma-ray irradiated commercial N- and P-channel power VDMOSFETs. Transistors were characterized for their threshold voltage shift and densities of radiation-induced oxide-trap charge and interface traps. The results show that the temperature enhances interface trap formation and oxide-trap charge decay rates, but also contributes to the passivation of interface traps. The study demonstrates that formation and passivation of interface traps are simultaneous processes. At certain conditions (lower temperature and/or positive bias) interface-trap formation dominates. Oppositely, at other conditions (higher temperature and/or negative bias) passivation is predominant. However at some conditions there is a complex interplay between formation and passivation of interface traps, resulting in interface traps increase followed by decrease at later annealing times. No model for interface trap post-irradiation behavior can explain this effect better than the recently proposed H-W model

  15. Fast assembly of ordered block copolymer nanostructures through microwave annealing.

    Science.gov (United States)

    Zhang, Xiaojiang; Harris, Kenneth D; Wu, Nathanael L Y; Murphy, Jeffrey N; Buriak, Jillian M

    2010-11-23

    Block copolymer self-assembly is an innovative technology capable of patterning technologically relevant substrates with nanoscale precision for a range of applications from integrated circuit fabrication to tissue interfacing, for example. In this article, we demonstrate a microwave-based method of rapidly inducing order in block copolymer structures. The technique involves the usage of a commercial microwave reactor to anneal block copolymer films in the presence of appropriate solvents, and we explore the effect of various parameters over the polymer assembly speed and defect density. The approach is applied to the commonly used poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) and poly(styrene)-b-poly(2-vinylpyridine) (PS-b-P2VP) families of block copolymers, and it is found that the substrate resistivity, solvent environment, and anneal temperature all critically influence the self-assembly process. For selected systems, highly ordered patterns were achieved in less than 3 min. In addition, we establish the compatibility of the technique with directed assembly by graphoepitaxy. PMID:20964379

  16. Radiation hardness of pre-annealed optical fibers

    International Nuclear Information System (INIS)

    In this paper, fused silica optical fiber is pre-annealed before irradiation after drawing process. After the heat-treatment, irradiation test is carried out at the cobalt-60 gamma-ray irradiation facility and fast neutron source. Pre-annealing effect and the temperature dependence of radiation induced optical transmission loss was investigated using the Co-60 gamma-ray and 14 MeV fast neutron source. The transmission losses in the visible wavelength range were much larger than in the infrared wavelength range, and the loss could be reduced in the whole wavelength range by the heat-treatment before irradiation. The reduction of transmission loss by the heat-treatment after drawing process before irradiation had the temperature dependence. It is found that an optimum temperature to minimize the transmission loss (radiation damage) exists, in other words, the radiation resistance can improve by the heat treatment of a specific temperature. The optimum temperature might be near 200 and 100degC under gamma-ray and fast neutron irradiation, respectively. (author)

  17. Laser annealing of amorphous silicon core optical fibers

    OpenAIRE

    Healy, N; Mailis, S.; Day, T. D.; Sazio, P.J.A.; Badding, J. V.; A.C. Peacock

    2012-01-01

    Laser annealing of an optical fiber with an amorphous silicon core is demonstrated. The annealing process produces a fiber that has a highly crystalline core, whilst reducing the optical transmission losses by ~3 orders of magnitude.

  18. Hypocoercivity in metastable settings and kinetic simulated annealing

    OpenAIRE

    Monmarché, Pierre

    2015-01-01

    Classical analysis of the simulated annealing algorithm is combined with the more recent hypocoercive method of distorted entropy to prove the convergence for large time of the kinetic Langevin annealing with logarithmic cooling schedule.

  19. Aplikasi Simulasi Annealing Untuk Menyelesaikan Traveling Salesman Problem

    OpenAIRE

    Larasati, Tuti

    2012-01-01

    Traveling salesman problem is one of combinatorial optimization problems that aim to obtain an optimal solution which determines the route that most minimum. And to resolve and find solutions to these problems one algorithm to be used is simulated annealing. Simulated annealing is an analogy of a liquid metals cooling process called annealing. Annealing is the metallurgical process of heating up a solid and then cooling slowly until it crystallizes. At this final task will shown an analogy an...

  20. Corrosion Behaviour of Annealed Cnx/Tiny Multilayers

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-dong; PAN Chun-xu; FU Qiang; ZHANG Fu-ju; ZOU Yang; ZHANG Shao-hua

    2004-01-01

    The corrosion behaviour of annealed CNx/TiNy multilayers have been investigated using potentiodynamic test in a 0.5MH2SO4 solution. The coating has been deposited on W6Mo5Cr4V2 steel by reactive magnetron sputtering and then annealed at different temperature. The annealed multilayers showed superior corrosion resistance as compared to the as-deposited coating. The corrosion model of annealed CNx/TiNy multilayers has been set up.

  1. Corrosion Behaviour of Annealed Cnx/Tiny Multilayers

    Institute of Scientific and Technical Information of China (English)

    ZHANGGuo-dong; PANChun-xu; FUQiang; ZHANGFu-ju; ZOUYang; ZHANGShao-hua

    2004-01-01

    The corrosion behaviour of annealed CNx/TiNy multilayers have been investigated using potentiodynamic test in a 0.5MH2SO4 solution. The coating has been deposited on W6MoSCr4V2 steel by reactive magnetron sputtering and then annealed at different temperature. The annealed multilayers showed superior corrosion resistance as compared to the as-deposited coating, The corrosion model of annealed CNx/TiNy multilayers has been set up.

  2. Bioprospecting finds the toughest biological material: extraordinary silk from a giant riverine orb spider.

    Directory of Open Access Journals (Sweden)

    Ingi Agnarsson

    Full Text Available BACKGROUND: Combining high strength and elasticity, spider silks are exceptionally tough, i.e., able to absorb massive kinetic energy before breaking. Spider silk is therefore a model polymer for development of high performance biomimetic fibers. There are over 41,000 described species of spiders, most spinning multiple types of silk. Thus we have available some 200,000+ unique silks that may cover an amazing breadth of material properties. To date, however, silks from only a few tens of species have been characterized, most chosen haphazardly as model organisms (Nephila or simply from researchers' backyards. Are we limited to 'blindly fishing' in efforts to discover extraordinary silks? Or, could scientists use ecology to predict which species are likely to spin silks exhibiting exceptional performance properties? METHODOLOGY: We examined the biomechanical properties of silk produced by the remarkable Malagasy 'Darwin's bark spider' (Caerostris darwini, which we predicted would produce exceptional silk based upon its amazing web. The spider constructs its giant orb web (up to 2.8 m(2 suspended above streams, rivers, and lakes. It attaches the web to substrates on each riverbank by anchor threads as long as 25 meters. Dragline silk from both Caerostris webs and forcibly pulled silk, exhibits an extraordinary combination of high tensile strength and elasticity previously unknown for spider silk. The toughness of forcibly silked fibers averages 350 MJ/m(3, with some samples reaching 520 MJ/m(3. Thus, C. darwini silk is more than twice tougher than any previously described silk, and over 10 times better than Kevlar®. Caerostris capture spiral silk is similarly exceptionally tough. CONCLUSIONS: Caerostris darwini produces the toughest known biomaterial. We hypothesize that this extraordinary toughness coevolved with the unusual ecology and web architecture of these spiders, decreasing the likelihood of bridgelines breaking and collapsing the web

  3. Simulated Annealing with Tsallis Weights - A Numerical Comparison

    OpenAIRE

    Hansmann, Ulrich H.E.

    1997-01-01

    We discuss the use of Tsallis generalized mechanics in simulated annealing algorithms. For a small peptide it is shown that older implementations are not more effective than regular simulated annealing in finding ground state configurations. We propose a new implementation which leads to an improvement over regular simulated annealing.

  4. On lumped models for thermodynamic properties of simulated annealing problems

    OpenAIRE

    Andresen, Bjarne; Hoffmann, Karl Heinz; Mosegaard, Klaus; Nulton, Jim; Pedersen, Jacob Mørch; Salamon, Peter

    1988-01-01

    The paper describes a new method for the estimation of thermodynamic properties for simulated annealing problems using data obtained during a simulated annealing run. The method works by estimating energy-to-energy transition probabilities and is well adapted to simulations such as simulated annealing, in which the system is never in equilibrium.

  5. An Effect of Annealing on Shielding Properties of Shungite

    Science.gov (United States)

    Belousova, E. S.; Mahmoud, M. Sh.; Lynkou, L. M.

    2013-05-01

    Annealing of shungite is studied in oxidizing conditions in a chamber with NH4Cl, and in vacuum at 900 °C for 2h. Frequency dependencies of transmission and reflection coefficients of annealed shungite are measured in the frequency range of 8-12 GHz. The minimum reflection at 8-10 GHz was shown for shungite annealed in the oxidizing atmosphere.

  6. Laser beam annealing of heavily damaged implanted layers on silicon

    International Nuclear Information System (INIS)

    The behavior during annealing of heavily doped silicon layers obtained by high current density ion implantation is investigated. The annealing is performed by a laser pulse and the surface layers are studied by Rutherford backscattering, SIMS, ellipsometry and conductivityy measurements. Comparisons with thermal annealing show the advantage of using laser pulses to restore the original cristallinity

  7. Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

    International Nuclear Information System (INIS)

    The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface

  8. Influence of thermal annealing and magnetic field on first order magnetic transition in Pd substituted FeRh

    Energy Technology Data Exchange (ETDEWEB)

    Kushwaha, Pallavi; Lakhani, Archana; Rawat, R; Chaddah, P, E-mail: archnalakhani@csr.ernet.i [UGC-DAE Consortium for Scientific Research University Campus, Khandwa Road Indore-452001, M.P (India)

    2010-01-01

    Influence of successive thermal annealing and magnetic field on First order antiferro (AFM) to ferromagnetic (FM) transition in the Pd substituted FeRh has been studied. With successive thermal annealing CsCl type bcc phase increases at the expense of fct (pseudo fcc) phase. Resistivity measurements do not show any transition in as-cast sample in contrast to annealed samples. AFM to FM transition temperature (T{sub N}) is found to decrease with higher annealing temperature. With the application of magnetic field, T{sub N} shift to lower temperature. These measurements show anomalous thermomagnetic irreversibility besides showing giant magnetoresistance across magnetic field induced first order AFM to FM transition.

  9. Annealing dependence of magnetic properties in nanostructured Sm0.5Y0.5Co5

    International Nuclear Information System (INIS)

    Nanocrystalline Sm0.5Y0.5Co5 powders with high coercivity HC and enhanced remanence Mr were prepared by mechanical milling and subsequent annealing. Annealing temperatures T ranging from 973 to 1173 K, and times t ranging from 1 to 5 min were used. X-ray diffraction (XRD) and DC-magnetization measurements were carried out to study the microstructure and magnetic properties of these samples. XRD patterns demonstrate that the average grain size of the nanocrystalline powders depends on the annealing temperature T and time t: ranges from 11 nm (for T=973 K and t=1 min) to 93 nm (for T=1173 K and t=5 min). Magnetic measurements performed at room temperature indicate high coercivity values (HC>955 kA/m), and enhanced remanence (Mr/Mmax>0.5) for all samples. A strong annealing-induced grain size dependence of these magnetic properties was found

  10. Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing

    Science.gov (United States)

    Winter, R.; Krylov, I.; Cytermann, C.; Tang, K.; Ahn, J.; McIntyre, P. C.; Eizenberg, M.

    2015-08-01

    The effect of post metal deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al2O3 interface.

  11. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.

    2012-05-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  12. Investigation of the safety testing of extraordinary thick steel material for pressure vessels

    International Nuclear Information System (INIS)

    With increasing size of nuclear reactors it was necessary to increase the wall thickness of the reactor pressure vessels. So, for example the wall thickness of the pressure vessel of the LWR pressurized water reactor type with 1.200.000 kW performance is 250 mm. The fabrication of these extraordinary thick steel plates is accurately carried out, nevertheless it is very important to control the characteristics of strength. For this reason extraordinarily thick steel plates of forged manganese-molybdenum-nickel steel produced in Japan and used for the production of reactor pressure vessels was utilized. The aim of this investigation is to know if and how the K sub(IR)- values correspond to the actual regulation for the prevention of brittle fracture and to determine the characteristics. (orig./RW)

  13. Extraordinary refraction and self-collimation properties of multilayer metallic-dielectric stratified structures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liwei, E-mail: zlwhpu@hotmail.com [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Chen, Liang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Zhang, Zhengren [School of Science, Chongqing Jiaotong University, Chongqing 400074 (China); Wang, Wusong [Guizhou Aerospace Institute of Measuring and Testing Technology, Guiyang 550009 (China); Zhao, Yuhuan; Song, Kechao; Kang, Chaoyang [School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China)

    2015-01-15

    The extraordinary refraction with negative or zero refraction angle of the layered metamaterial consisting of alternating dielectric and plasmonic layers is theoretically studied. It is shown that the electromagnetic properties can be tuned by the filling factor, the permittivity of the dielectric layer and the plasma frequency of the metallic layer. At different frequency, the layered structures possess different refraction properties with positive, zero or negative refraction angle. By choosing appropriate parameters, positive-to-zero-to-negative-to positive refraction at the desired frequency can be realized. At the frequency with flat equal frequency contour, self-collimation and slow light properties are also found. Such properties can be used in the performance of negative refraction, subwavelength imaging and information propagation.

  14. An extraordinary enhancement of strain hardening in fine-grained zirconium

    International Nuclear Information System (INIS)

    Grain refinement always leads to a high strength but a low ductility that results from a reduced strain hardening. Here, we report an extraordinary enhancement of strain hardening in fine-grained (FG) Zr with an average grain size of 2–3 μm compared with its coarse-grained (CG) counterpart, which yields a uniform elongation of ∼15.5% in the same order as that (∼13.2%) of the CG Zr. The unusually enhanced strain hardening in the FG Zr is attributed to the formation of nano-scale defect structures within the fine grains. The present work provides a promising way to enhance the ductility of fine- and ultrafine-grained materials without losing their high strength, and thus is of wide interest

  15. Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

    KAUST Repository

    Sun, Jian

    2012-06-06

    An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

  16. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian

    2010-11-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.

  17. Extraordinary mid-infrared transmission of subwavelength holes in gold films

    KAUST Repository

    Yue, Weisheng

    2014-04-01

    Gold (Au) nanoholes are fabricated with electron-beam lithography and used for the investigation of extraordinary transmission in mid-infrared regime. Transmission properties of the nanoholes are studied as the dependence on hole-size. Transmittance spectra are characterized by Fourier transform infrared spectroscopy (FTIR) and enhanced transmittance through the subwavelength holes is observed. The transmission spectra exhibit well-defined maximum and minimum of which the position are determined by the lattice of the hole array. The hole-size primarily influence the transmission intensity and bandwidth of the resonance peak. With an increase of hole-size, while keep lattice constant fixed, the intensity of the resonance peak and the bandwidth increases, which are due to the localized surface plasmons. Numerical simulation for the transmission through the subwavelength holes is performed and the simulated results agree with the experimental observations. Copyright © 2014 American Scientific Publishers.

  18. Enhanced extraordinary optical transmission (EOT) through arrays of bridged nanohole pairs and their sensing applications

    KAUST Repository

    Yue, Weisheng

    2014-01-01

    Extraordinary optical transmission (EOT) through arrays of gold nanoholes was studied with light across the visible to the near-infrared spectrum. The EOT effect was found to be improved by bridging pairs of nanoholes due to the concentration of the electromagnetic field in the slit between the holes. The geometrical shape and separation of the holes in these pairs of nanoholes affected the intensity of the transmission and the wavelength of resonance. Changing the geometrical shapes of these nanohole pairs from triangles to circles to squares leads to increased transmission intensity as well as red-shifting resonance wavelengths. The performance of bridged nanohole pairs as a plasmonic sensor was investigated. The bridged nanohole pairs were able to distinguish methanol, olive oil and microscope immersion oil for the different surface plasmon resonance in transmission spectra. Numerical simulation results were in agreement with experimental observations. © 2014 the Partner Organisations.

  19. Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer

    Science.gov (United States)

    Lv, H. Y.; Lu, W. J.; Shao, D. F.; Liu, Y.; Tan, S. G.; Sun, Y. P.

    2015-05-01

    The electronic structures of the WTe2 bulk and layers are investigated by using the first-principles calculations. The perfect electron-hole (n\\text-p) charge compensation and high carrier mobilities are found in the WTe2 bulk, which may result in the large and non-saturating magnetoresistance (MR) observed very recently in the experiment (Ali M. N. et al, Nature, 514 (2014) 205). The monolayer and bilayer of WTe2 preserve the semimetallic property, with equal hole and electron carrier concentrations. Moreover, very high carrier mobilities are also found in WTe2 monolayer, indicating that the WTe2 monolayer would have the same extraordinary MR effect as the bulk, which could have promising applications in nanostructured magnetic devices.

  20. Zoology of condensed matter: Framids, ordinary stuff, extra-ordinary stuff

    CERN Document Server

    Nicolis, Alberto; Piazza, Federico; Rattazzi, Riccardo

    2015-01-01

    We classify condensed matter systems in terms of the spacetime symmetries they spontaneously break. In particular, we characterize condensed matter itself as any state in a Poincar\\'e-invariant theory that spontaneously breaks Lorentz boosts while preserving at large distances some form of spatial translations, time-translations, and possibly spatial rotations. Surprisingly, the simplest, most minimal system achieving this symmetry breaking pattern---the "framid"---does not seem to be realized in Nature. Instead, Nature usually adopts a more cumbersome strategy: that of introducing internal translational symmetries---and possibly rotational ones---and of spontaneously breaking them along with their space-time counterparts, while preserving unbroken diagonal subgroups. This symmetry breaking pattern describes the infrared dynamics of ordinary solids, fluids, superfluids, and---if they exist---supersolids. A third, "extra-ordinary", possibility involves replacing these internal symmetries with other symmetries ...

  1. What makes a champion! over fifty extraordinary individuals share their insights

    CERN Document Server

    2014-01-01

    What drives great and successful individuals — be they athletes, artists, or scientists — or businesses, to achieve the extraordinary? Over fifty champions from all walks of life, brought together by Allan Snyder, draw on their experiences to explore the secrets of success in this inspiring, revealing and thought-provoking book. Hear from the authors what made a McDonalds' branch become the most successful in the world; how a cottage business is catapulted into a world brand; how a visual artist's works crosses almost every medium imaginable; how an Ernst and Young setup becomes a top-notch employer; or why many geniuses or brilliant individuals never become champions, while many 'ordinary' individuals do; why many people don't know about their talent; what constitutes a champion outcome; and the neurological explanation for championship. Straddling academia and practitioners in all fields — government, entertainment, sports, business, arts, education, medicine, media — the authors include business...

  2. Hardness and microstructural response to thermal annealing of irradiated ASTM A533B class 1 plate steel

    Energy Technology Data Exchange (ETDEWEB)

    Reinhart, D.E. [SMS Concast, Inc., Pittsburgh, PA (United States); Kumar, A.S. [Univ. of Missouri, Rolla, MO (United States); Gelles, D.S.; Hamilton, M.L. [Pacific Northwest Lab., Richland, WA (United States); Rosinski, S.T. [Electric Power Research Inst., Charlotte, NC (United States)

    1999-10-01

    Hardness measurements were used to determine the post-irradiation annealing response of A533B class 1 plate steel irradiated to a fluence of 1 {times} 10{sup 19} n/cm{sup 2} (E > 1 MeV) at 150 C. Rockwell hardness measurements indicated that the material had hardened by 6.6 points on the B scale after irradiation. The irradiation induced hardness increase was associated with a decrease in upper shelf energy from 63.4 J to 5-1.8 J and a temperature shift in the Charpy curve at the 41 J level from 115 C to 215 C. Specimens were annealed after irradiation at temperatures of 343 C (650 F), 399 C (750 F), and 454 C (850 F) for durations of up to one week (168 h). Hardness measurements were made to chart recovery of hardness as a function of time and temperature. Specimens annealed at the highest temperature 454 C recovered the fastest, fully recovering within 144 h. Specimens annealed at 399 C recovered completely within 168 h. Specimens annealed at the lowest temperature, 343 C recovered only {approximately}70% after 168 h of annealing. After neutron irradiation, a new feature of black spot damage was found to be superimposed on the unirradiated microstructure. The density of black spots was found to vary from 2.3 {times} 10{sup 15}/cm{sup 3} to 1.1 {times} 10{sup 16}/cm{sup 3} with an average diameter of 2.85 nm. Following annealing at 454 C for 24 h the black spot damage was completely annealed out. It was concluded that the black spot damage was responsible for 70% of the irradiation-induced hardness.

  3. Hardness and microstructural response to thermal annealing of irradiated ASTM A533B class 1 plate steel

    International Nuclear Information System (INIS)

    Hardness measurements were used to determine the post-irradiation annealing response of A533B class 1 plate steel irradiated to a fluence of 1 x 1019 n/cm2 (E > 1 MeV) at 150 C. Rockwell hardness measurements indicated that the material had hardened by 6.6 points on the B scale after irradiation. The irradiation induced hardness increase was associated with a decrease in upper shelf energy from 63.4 J to 5-1.8 J and a temperature shift in the Charpy curve at the 41 J level from 115 C to 215 C. Specimens were annealed after irradiation at temperatures of 343 C (650 F), 399 C (750 F), and 454 C (850 F) for durations of up to one week (168 h). Hardness measurements were made to chart recovery of hardness as a function of time and temperature. Specimens annealed at the highest temperature 454 C recovered the fastest, fully recovering within 144 h. Specimens annealed at 399 C recovered completely within 168 h. Specimens annealed at the lowest temperature, 343 C recovered only ∼70% after 168 h of annealing. After neutron irradiation, a new feature of black spot damage was found to be superimposed on the unirradiated microstructure. The density of black spots was found to vary from 2.3 x 1015/cm3 to 1.1 x 1016/cm3 with an average diameter of 2.85 nm. Following annealing at 454 C for 24 h the black spot damage was completely annealed out. It was concluded that the black spot damage was responsible for 70% of the irradiation-induced hardness

  4. Relaxation of the EM Algorithm via Quantum Annealing

    CERN Document Server

    Miyahara, Hideyuki

    2016-01-01

    The EM algorithm is a novel numerical method to obtain maximum likelihood estimates and is often used for practical calculations. However, many of maximum likelihood estimation problems are nonconvex, and it is known that the EM algorithm fails to give the optimal estimate by being trapped by local optima. In order to deal with this difficulty, we propose a deterministic quantum annealing EM algorithm by introducing the mathematical mechanism of quantum fluctuations into the conventional EM algorithm because quantum fluctuations induce the tunnel effect and are expected to relax the difficulty of nonconvex optimization problems in the maximum likelihood estimation problems. We show a theorem that guarantees its convergence and give numerical experiments to verify its efficiency.

  5. On the room-temperature annealing of cryogenically rolled copper

    International Nuclear Information System (INIS)

    Highlights: → Cryo-rolled copper is unstable during long-term storage at room-temperature. → Static recrystallization is nucleated via grain-boundary bulging and recovery. → Two competing recrystallization mechanisms result in a bimodal grain structure. → The specific nature of the recrystallization may induce abnormal grain growth. - Abstract: The electron-backscatter-diffraction (EBSD) technique was applied to investigate room-temperature annealing processes in cryogenically rolled copper during long-term (∼1.5 years) storage at ambient temperature. Static recrystallization appeared to be nucleated as result of both grain-boundary bulging and recovery. A bimodal recrystallized grain size distribution appeared to be a result of these two competing mechanisms. The ultra-fine grain copper produced via cryogenic deformation was deduced to be prone to abnormal grain growth after long static storage at room-temperature.

  6. Channeled PIXE and magnetic measurements in Co implanted and thermally annealed ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Werner, Z., E-mail: wernerz@ipj.gov.pl [National Centre for Nuclear Research, 7 Sołtana Street, 05-400 Otwock (Poland); Ratajczak, R. [National Centre for Nuclear Research, 7 Sołtana Street, 05-400 Otwock (Poland); Gosk, J. [Institute of Experimental Physics, University of Warsaw, 69 Hoża Street, 00-681 Warsaw (Poland); Faculty of Physics, Warsaw University of Technology, 75 Koszykowa Street, 00-662 Warsaw (Poland); Barlak, M. [National Centre for Nuclear Research, 7 Sołtana Street, 05-400 Otwock (Poland); Twardowski, A. [Institute of Experimental Physics, University of Warsaw, 69 Hoża Street, 00-681 Warsaw (Poland); Pochrybniak, C. [National Centre for Nuclear Research, 7 Sołtana Street, 05-400 Otwock (Poland); Zhao, Q. [KU Leuven, Nuclear and Radiation Physics Section, Celestijnenlaan 200d – box 2418, Leuven (Belgium)

    2014-08-15

    Highlights: • Exceptionally high magnetic moment has been found in ZnO single crystals implanted with 120 keV Co ions to a fluence of 0.6 × 10{sup 16} cm{sup −2} and 1.2 × 10{sup 16} cm{sup −2}. • Paramagnetic and ferromagnetic phases present after implantation transform into a paramagnetic phase following 800 °C annealing. • The magnetism is attributed to implantation-induced defects. - Abstract: Single crystals of ZnO were implanted with 0.6 × 10{sup 16} cm{sup −2} and 1.2 × 10{sup 16} cm{sup −2} of Co ions produced by MEVVA type implanter. Channeled Rutherford backscattering (cRBS) measurements reveal incomplete amorphisation. Thermal annealing at 800 °C in argon leads to a reduction of point-type defects. The channeled particle-induced X-ray emission (cPIXE) measurements show partial substitutionality of Co ions directly following implantation with further growth of substitutional occupation after annealing. Magnetic measurements reveal the presence of paramagnetic and ferromagnetic phases after implantation. The value of magnetization can be interpreted as due to defects rather than Co content. The ferromagnetic phase disappears after annealing and the paramagnetic phase grows in intensity.

  7. Annealing of irradiated n+p InP buried homojunctions

    Science.gov (United States)

    Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

    1994-01-01

    At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

  8. Learning FCM by chaotic simulated annealing

    International Nuclear Information System (INIS)

    Fuzzy cognitive map (FCM) is a directed graph, which shows the relations between essential components in complex systems. It is a very convenient, simple, and powerful tool, which is used in numerous areas of application. Experts who are familiar with the system components and their relations can generate a related FCM. There is a big gap when human experts cannot produce FCM or even there is no expert to produce the related FCM. Therefore, a new mechanism must be used to bridge this gap. In this paper, a novel learning method is proposed to construct FCM by using Chaotic simulated annealing (CSA). The proposed method not only is able to construct FCM graph topology but also is able to extract the weight of the edges from input historical data. The efficiency of the proposed method is shown via comparison of its results of some numerical examples with those of Simulated annealing (SA) method.

  9. Simulated annealing in orbital flight planning

    Science.gov (United States)

    Soller, Jeffrey

    1990-01-01

    Simulated annealing is used to solve a minimum fuel trajectory problem in the space station environment. The environment is unique because the space station will define the first true multivehicle environment in space. The optimization yields surfaces which are potentially complex, with multiple local minima. Because of the likelihood of these local minima, descent techniques are unable to offer robust solutions. Other deterministic optimization techniques were explored without success. The simulated annealing optimization is capable of identifying a minimum-fuel, two-burn trajectory subject to four constraints. Furthermore, the computational efforts involved in the optimization are such that missions could be planned on board the space station. Potential applications could include the on-site planning of rendezvous with a target craft of the emergency rescue of an astronaut. Future research will include multiwaypoint maneuvers, using a knowledge base to guide the optimization.

  10. Thermal annealing of selected individual quantum dots

    International Nuclear Information System (INIS)

    Cathodoluminescence spectra of single InAs/GaAs quantum dots were recorded before and after consecutive thermal annealing steps. The annealing process leads to an overall blueshift of the spectra indicating In/Ga interdiffusion. Excitonic fine-structure splitting and binding energies of charged and neutral excitonic complexes were monitored. A drastic reduction of the fine-structure splitting from 170 μeV to less than 20 μeV can be observed accompanied by a change of the character of the biexciton from anti-binding to binding with respect to the exciton. Tailoring the fine-structure splitting is especially important for the use of single quantum dots in opto-electronic devices for quantum key distribution where a degeneracy of the exciton ground state (i.e. a fine-structure splitting below the homogeneous linewidth) is required for the on-demand production of entangled photon pairs

  11. Code Generator for Quantum Simulated Annealing

    CERN Document Server

    Tucci, Robert R

    2009-01-01

    This paper introduces QuSAnn v1.2 and Multiplexor Expander v1.2, two Java applications available for free. (Source code included in the distribution.) QuSAnn is a "code generator" for quantum simulated annealing: after the user inputs some parameters, it outputs a quantum circuit for performing simulated annealing on a quantum computer. The quantum circuit implements the algorithm of Wocjan et al. (arXiv:0804.4259), which improves on the original algorithm of Somma et al. (arXiv:0712.1008). The quantum circuit generated by QuSAnn includes some quantum multiplexors. The application Multiplexor Expander allows the user to replace each of those multiplexors by a sequence of more elementary gates such as multiply controlled NOTs and qubit rotations.

  12. Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing

    Institute of Scientific and Technical Information of China (English)

    JIN Rui-min; ZHENG Xiao-yan; CHEN Lan-li; LUO Peng-hui; GUO Xin-feng; LU Jing-xiao

    2009-01-01

    Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing (FA) and rapid thermal annealing ( RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.

  13. Extraordinary Performance of Carbon-Coated Anatase TiO2 as Sodium-Ion Anode

    OpenAIRE

    Tahir, M. N.; Oschmann, B.; Buchholz, D.; Dou, X.; Lieberwirth, I.; Panthöfer, M.; Tremel, W; Zentel, R.; Passerini, S.

    2016-01-01

    The synthesis of in situ polymer-functionalized anatase TiO2 particles using an anchoring block copolymer with hydroxamate as coordinating species is reported, which yields nanoparticles (≈11 nm) in multigram scale. Thermal annealing converts the polymer brushes into a uniform and homogeneous carbon coating as proven by high resolution transmission electron microscopy and Raman spectroscopy. The strong impact of particle size as well as carbon coating on the electrochemical performance of ana...

  14. Extraordinary Performance of Carbon‐Coated Anatase TiO2 as Sodium‐Ion Anode

    OpenAIRE

    2015-01-01

    The synthesis of in situ polymer‐functionalized anatase TiO2 particles using an anchoring block copolymer with hydroxamate as coordinating species is reported, which yields nanoparticles (≈11 nm) in multigram scale. Thermal annealing converts the polymer brushes into a uniform and homogeneous carbon coating as proven by high resolution transmission electron microscopy and Raman spectroscopy. The strong impact of particle size as well as carbon coating on the electrochemical performance of ana...

  15. Pyrolytic citrate synthesis and ozone annealing

    International Nuclear Information System (INIS)

    A pyrolytic procedure is described that via a citrate synthesis allowed us to obtain very fine grained YBCO powders that, after a first furnace thermal treatment in ozone, results already to contain a large amount of superconducting microcrystals. A second identical thermal treatment gives a final product strongly textured, as shown by magnetic torque measurements. Complementary structural and diamagnetic measurement show the high quality of these sintered pellets. The role covered by both the pyrolytic preparation and the ozone annealing are discussed

  16. Pyrolitic citrate synthesis and ozone annealing

    International Nuclear Information System (INIS)

    A pyrolytic procedure that via a citrate synthesis allowed to obtain very fine grained YBCO powders that, after a first furnace thermal treatment in ozone, result already to contain a large amount of superconducting microcystals is described. A second identical thermal treatment gives a final product strongly textured, as shown by magnetic torque measurements. Complementary structural and diamagnetic measurements show the high quality of these sintered pellets. The role covered by both the pyrolytic preparation and the ozone annealing are discussed

  17. Using Simulated Annealing to Factor Numbers

    OpenAIRE

    Altschuler, Eric Lewin; Williams, Timothy J.

    2014-01-01

    Almost all public secure communication relies on the inability to factor large numbers. There is no known analytic or classical numeric method to rapidly factor large numbers. Shor[1] has shown that a quantum computer can factor numbers in polynomial time but there is no practical quantum computer that can yet do such computations. We show that a simulated annealing[2] approach can be adapted to find factors of large numbers.

  18. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    OpenAIRE

    Ladislav Rosocha; Silvia Vernerova; Robert Verner

    2015-01-01

    Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem. Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a...

  19. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    OpenAIRE

    Ladislav Rosocha; Silvia Vernerova; Robert Verner

    2015-01-01

    Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem.Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a ...

  20. Laser-annealing of thin semiconductor films

    OpenAIRE

    Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul

    1994-01-01

    Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.

  1. Solving maximum cut problems by simulated annealing

    OpenAIRE

    Myklebust, Tor G. J.

    2015-01-01

    This paper gives a straightforward implementation of simulated annealing for solving maximum cut problems and compares its performance to that of some existing heuristic solvers. The formulation used is classical, dating to a 1989 paper of Johnson, Aragon, McGeoch, and Schevon. This implementation uses no structure peculiar to the maximum cut problem, but its low per-iteration cost allows it to find better solutions than were previously known for 40 of the 89 standard maximum cut instances te...

  2. Thermal annealing of fission fragment radiation damage in CR-39

    International Nuclear Information System (INIS)

    The annealing behavior of fission fragment tracks in CR-39 has been studied at different temperatures for various time intervals. Experimental data, obtained in isothermal and isochronal annealing experiments carried out on CR-39 irradiated with fission fragments of 252Cf, has been analyzed on the basis of different annealing models. It has been attempted to find out the validity of these models, developed on the basis of annealing data in minerals and other detectors, to the annealing data of fission fragment tracks in CR-39

  3. Annealing of Solar Cells and Other Thin Film Devices

    Science.gov (United States)

    Escobar, Hector; Kuhlman, Franz; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

    2001-01-01

    Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

  4. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka;

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... 175°C followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation...

  5. Study Of Microstructure And Hardness Of Assab Corrax Steel Annealing

    International Nuclear Information System (INIS)

    Hardness testing and microstructures investigation have been performed at annealed Assab Corrax steel. This preliminary research is gain to look for the high temperature operation resisting materials. The steels were annealed to observe grains and hardness changes in two ways; annealing-temperature constant (400oC) and annealing-time hold constant (4 hours). The results show that the hardness vs. time-hold fluctuates between 200 Hv and 400 Hv, meanwhile it tends to increase due to precipitation hardening by means annealing temperatures. In summary, the hardness is unpredictable by means time-hold and it improves due to precipitation role. The surface micrographs support the phenomena

  6. Simulated annealing with probabilistic analysis for solving traveling salesman problems

    Science.gov (United States)

    Hong, Pei-Yee; Lim, Yai-Fung; Ramli, Razamin; Khalid, Ruzelan

    2013-09-01

    Simulated Annealing (SA) is a widely used meta-heuristic that was inspired from the annealing process of recrystallization of metals. Therefore, the efficiency of SA is highly affected by the annealing schedule. As a result, in this paper, we presented an empirical work to provide a comparable annealing schedule to solve symmetric traveling salesman problems (TSP). Randomized complete block design is also used in this study. The results show that different parameters do affect the efficiency of SA and thus, we propose the best found annealing schedule based on the Post Hoc test. SA was tested on seven selected benchmarked problems of symmetric TSP with the proposed annealing schedule. The performance of SA was evaluated empirically alongside with benchmark solutions and simple analysis to validate the quality of solutions. Computational results show that the proposed annealing schedule provides a good quality of solution.

  7. Optimization of management of origin of extraordinary situations risks during transportations of oil products by a railway transport

    Directory of Open Access Journals (Sweden)

    С.В. Бойченко

    2010-04-01

    Full Text Available  Possibility of management of origin of extraordinary situations risks is considered at transportation of oil products by a railway transport. Intercommunication of functional strategy of providing of accident-freeness of vehicular process is resulted with other strategies.

  8. Commentary (Analysis of Decisions on Interim Release at the Extraordinary Chambers in the Courts of Cambodia (ECCC))

    DEFF Research Database (Denmark)

    Appazov, Artur

    2015-01-01

    jurisdictions for the reasons of unavailability of reliable enforcement mechanisms. This is said to justify the pre-trial detention to be de facto the rule rather than exception. However, specific conditions of the Extraordinary Chambers in the Courts of Cambodia (ECCC) warrant a differing appraisal. The...

  9. The Roles of Teachers' Work Motivation and Teachers' Job Satisfaction in the Organizational Commitment in Extraordinary Schools

    Science.gov (United States)

    Tentama, Fatwa; Pranungsari, Dessy

    2016-01-01

    Teachers' work motivation and teachers' job satisfaction are the factors influencing the organizational commitment. This research is aimed to empirically examine the roles of teachers' work motivation and teachers' job satisfaction in the commitment of the organization in extraordinary schools. The subjects of the research are the teachers in…

  10. Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs

    International Nuclear Information System (INIS)

    GaAs wafers were implanted and later annealed by using three different techniques: furnace thermal annealing (FTA), flash lamp (RTA) and low-power laser annealing (LPLA). The resulting modifications of the structure were studied by RHEED. The RHEED pattern analysis indicates that: (a) a well annealed structure is observed after thermal treatment in furnace at 850oC for 30 min; (b) the particular RTA employed leads to some texturing, but is not sufficient to provide good structural effects; (c) best annealing under our conditions is obtained by the LPLA technique, especially for low ion doses (less than 1013 cm-2); (d) variable-glancing-angle RHEED is an effective and convenient method to investigate the ion induced disorder in crystals at small depths. (author)

  11. Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

    Science.gov (United States)

    Abdulaziz, Salman S.; Woodyard, James R.

    1991-01-01

    Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

  12. Relaxation studies of amorphous alloys with creep induced magnetic and structural anisotropy

    International Nuclear Information System (INIS)

    Amorphous ferromagnetic (Fe,Co,Ni) ribbons of various compositions have been prepared by rapid solidification and annealed with applied tensile stress. This process yields both creep-induced magnetic anisotropy and structural anisotropy. Post-annealing has been done to investigate the relaxation process. X-ray diffraction and thermomechanical analysis measurement of post-annealed samples reveal a clear underlying relaxation process in the material, proving that structural anisotropy corresponds to the elastic strain induced by creep annealing.

  13. Manipulating the Morphology of P3HT–PCBM Bulk Heterojunction Blends with Solvent Vapor Annealing

    KAUST Repository

    Verploegen, Eric

    2012-10-23

    Using grazing incidence X-ray scattering, we observe the effects of solvent vapors upon the morphology of poly(3-hexylthiophene)-phenyl-C 61-butyric acid methyl ester (P3HT-PCBM) bulk heterojunction thin film blends in real time; allowing us to observe morphological rearrangements that occur during this process as a function of solvent. We detail the swelling of the P3HT crystallites upon the introduction of solvent and the resulting changes in the P3HT crystallite morphology. We also demonstrate the ability for tetrahydrofuran vapor to induce crystallinity in PCBM domains. Additionally, we measure the nanoscale phase segregated domain size as a function of solvent vapor annealing and correlate this to the changes observed in the crystallite morphology of each component. Finally, we discuss the implications of the morphological changes induced by solvent vapor annealing on the device properties of BHJ solar cells. © 2012 American Chemical Society.

  14. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  15. Annealing texture of nanostructured IF steel

    International Nuclear Information System (INIS)

    In the present work, the evolution of annealing texture in nanostructured interstitial free steel fabricated via accumulative roll bonding (ARB) process was investigated. Textural evolution after post-annealing of ARB-processed samples was evaluated using X-ray diffraction. There were several texture transitions in the γ-fiber and ζ-fiber during ARB and post-annealing treatment. It was found that with increasing the number of ARB cycles, the volume fraction of the low angle grain boundary decreased and the high angle grain boundary fraction increased. Also, the shear texture was dominant after the first cycle, while for other samples, the rolling texture was dominant. The one-cycle sample clearly indicated a weak α-fiber and γ-fiber and a relatively strong ζ-fiber. In addition, during the recrystallization and before the grain growth, the intensity of α-fiber and γ-fiber decreased, the intensity of ζ-fiber increased, and the intensity of (011)〈100〉 orientation in the ε-fiber and η-fiber increased. Moreover, it was concluded that the transition from the rolling texture to the shear one was a sign of occurrence of the recrystallization (before the grain growth). Finally, with increasing the number of ARB cycles, the intensity of rolling and shear textures saturated and a stable texture formed. - Highlights: • There were texture transitions in the γ-fiber and ζ-fiber. • When the number of cycles increased, the low angle grain boundaries decreased. • The shear texture was dominant after the first cycle. • Transition from rolling texture to shear one was a sign of recrystallization. • With increasing the number of ARB cycles, a stable texture formed

  16. Optimizing an Organized Modularity Measure for Topographic Graph Clustering: a Deterministic Annealing Approach

    OpenAIRE

    Rossi, Fabrice; Villa-Vialaneix, Nathalie

    2010-01-01

    This paper proposes an organized generalization of Newman and Girvan's modularity measure for graph clustering. Optimized via a deterministic annealing scheme, this measure produces topologically ordered graph clusterings that lead to faithful and readable graph representations based on clustering induced graphs. Topographic graph clustering provides an alternative to more classical solutions in which a standard graph clustering method is applied to build a simpler graph that is then represen...

  17. Emission properties of MEH-PPV in thin films simultaneously illuminated and annealed at different temperatures

    KAUST Repository

    Botiz, Ioan

    2015-01-01

    © 2014 Elsevier B.V. All rights reserved. We report on the enhancement of photoluminescence in thin films of poly[2-methoxy-5-((2′-ethylhexyl)oxy)-1,4-phenylenvinylene], neat or embedded in polystyrene, upon illumination with light as a function of annealing temperature, with our data emphasizing the picture of a light-induced conformation change that leads to the altered photophysical response of this polymer.

  18. Error correction for encoded quantum annealing

    Science.gov (United States)

    Pastawski, Fernando; Preskill, John

    2016-05-01

    Recently, W. Lechner, P. Hauke, and P. Zoller [Sci. Adv. 1, e1500838 (2015), 10.1126/sciadv.1500838] have proposed a quantum annealing architecture, in which a classical spin glass with all-to-all pairwise connectivity is simulated by a spin glass with geometrically local interactions. We interpret this architecture as a classical error-correcting code, which is highly robust against weakly correlated bit-flip noise, and we analyze the code's performance using a belief-propagation decoding algorithm. Our observations may also apply to more general encoding schemes and noise models.

  19. Binary Sparse Phase Retrieval via Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Wei Peng

    2016-01-01

    Full Text Available This paper presents the Simulated Annealing Sparse PhAse Recovery (SASPAR algorithm for reconstructing sparse binary signals from their phaseless magnitudes of the Fourier transform. The greedy strategy version is also proposed for a comparison, which is a parameter-free algorithm. Sufficient numeric simulations indicate that our method is quite effective and suggest the binary model is robust. The SASPAR algorithm seems competitive to the existing methods for its efficiency and high recovery rate even with fewer Fourier measurements.

  20. Batch-annealed dual-phase steel

    International Nuclear Information System (INIS)

    Dual-phase steel, consisting essentially of a ferrite matrix containing islands of martensite, is produced by batch annealing of hot or cold rolled steel having carbon below 0.2% and manganese below 2% and at least critical contents of copper (0.4%) and nickel (0.6%), with heat to the alpha plus gamma region, followed by slow cooling. This procedure is effective and controllable, and yields a dual-phase steel product that has high tensile strength with excellent elongation properties and that develops good yield strength upon moderate deformation

  1. Annealing relaxation of ultrasmall gold nanostructures

    Science.gov (United States)

    Chaban, Vitaly

    2015-01-01

    Except serving as an excellent gift on proper occasions, gold finds applications in life sciences, particularly in diagnostics and therapeutics. These applications were made possible by gold nanoparticles, which differ drastically from macroscopic gold. Versatile surface chemistry of gold nanoparticles allows coating with small molecules, polymers, biological recognition molecules. Theoretical investigation of nanoscale gold is not trivial, because of numerous metastable states in these systems. Unlike elsewhere, this work obtains equilibrium structures using annealing simulations within the recently introduced PM7-MD method. Geometries of the ultrasmall gold nanostructures with chalcogen coverage are described at finite temperature, for the first time.

  2. Analysis of Grain Growth in Strain Annealing of Low Carbon Steel

    Energy Technology Data Exchange (ETDEWEB)

    An, Sung Kwon [Union Steel MFG. Co., Ltd., Busan (Korea, Republic of); Hong, Seung Hyun [Hyundai Motor Company and Kia Motors Corporation, Hwasung (Korea, Republic of)

    2007-10-15

    A study has been made of the grain growth in IF steel during strain annealing. A 92.3% cold rolled and annealed IF steel sheet was temper rolled by 0.4% and subsequently annealed at 670, 750 and 850 .deg. C for various time periods in 25%H{sub 2}+75%N{sub 2}. The grains occasionally started to grow abnormally near the surface and grew into the center during strain annealing. The pole figure and EBSD measurements showed that the abnormally grown grains did not have any orientation relation with the primary recrystallization texture before temper rolling. Thus, the major coarsening mechanism was regarded to be the strain induced grain boundary migration rather than grain boundary characteristics. The permeability increased initially and then decreased along with the increased of grain size, therefore there existed an optimum grain size showing maximum value of permeability. The maximum permeability was measured up to be 13,000, then optimum grain size is 83 {mu}m at 850 .deg. C for 30 min.

  3. Influence of annealing on the photodeposition of silver on periodically poled lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Carville, N. Craig; Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4 (Ireland); Manzo, Michele; Baghban, Mohammad-Amin; Gallo, Katia [Department of Applied Physics, KTH - Royal Institute of Technology, Roslagstullbacken 21, 106 91 Stockholm (Sweden); Ivanov, Ilia N. [Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2016-02-07

    The preferential deposition of metal nanoparticles onto periodically poled lithium niobate surfaces, whereby photogenerated electrons accumulate in accordance with local electric fields and reduce metal ions from solution, is known to depend on the intensity and wavelength of the illumination and the concentration of the solution used. Here, it is shown that for identical deposition conditions (wavelength, intensity, concentration), post-poling annealing for 10 h at 200 °C modifies the surface reactivity through the reorientation of internal defect fields. Whereas silver nanoparticles deposit preferentially on the +z domains on unannealed crystals, the deposition occurs preferentially along 180° domain walls for annealed crystals. In neither case is the deposition selective; limited deposition occurs also on the unannealed –z domain surface and on both annealed domain surfaces. The observed behavior is attributed to a relaxation of the poling-induced defect frustration mediated by Li{sup +} ion mobility during annealing, which affects the accumulation of electrons, thereby changing the surface reactivity. The evolution of the defect field with temperature is corroborated using Raman spectroscopy.

  4. Effect of Doping Phosphorescent Material and Annealing Treatment on the Performance of Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Zixuan Wang

    2013-01-01

    Full Text Available A series of polymer solar cells (PSCs with P3HT:PCBM or P3HT:PCBM:Ir(btpy3 blend films as the active layer were fabricated under the same conditions. Effects of phosphorescent material Ir(btpy3 doping concentration and annealing temperature on the performance of PSCs were investigated. The short-circuit current density (Jsc and open-circuit voltage (Voc are increased by adopting P3HT:PCBM:Ir(btpy3 blend films as the active layer when the cells do not undergo annealing treatment. The increased Jsc should be attributed to the increase of photon harvesting induced by doping phosphorescent material Ir(btpy3 and the effective energy transfer from Ir(btpy3 to P3HT. The effective energy transfer from Ir(btpy3 to P3HT was demonstrated by time-resolved photoluminescence (PL spectra. The increased Voc is due to the photovoltaic effect between Ir(btpy3 and PCBM. The power conversion efficiency (PCE of PSCs with P3HT:PCBM as the active layer is increased from 0.19% to 1.49% by annealing treatment at 140°C for 10 minutes. The PCE of PSCs with P3HT:PCBM:Ir(btpy3 as the active layer is increased from 0.49% to 0.95% by annealing treatment at lower temperature at 100°C for 10 minutes.

  5. The role of hydrogen partial pressure on the annealing of copper substrates for graphene CVD synthesis

    Science.gov (United States)

    Ramos, Welyson T. S.; Cunha, Thiago H. R.; Barcelos, Ingrid D.; Miquita, Douglas R.; Ferrari, Gustavo A.; de Oliveira, Sergio; Seara, Luciana M.; Silva Neto, Eliel G.; Ferlauto, Andre S.; Lacerda, Rodrigo G.

    2016-04-01

    The influence of hydrogen utilized during the thermal treatment of copper substrates on the subsequent graphene growth is investigated. It is known that various parameters such as nature of the carbon precursor, temperature and pressure strongly affect the quality of the graphene grown by chemical vapor deposition. Another important parameter is the hydrogen partial pressure adjusted during the growth stage and in the pre-growth annealing of the substrate. In attempts to elucidate the role of hydrogen assisted thermal annealing on the copper substrate morphology and on the subsequent graphene growth, we subjected Cu foils to thermal annealing under H2 atmosphere at different pressures. The copper surface was characterized by scanning electronic microscopy (SEM) and atomic force microscopy whereas graphene films and grains were characterized by Raman spectroscopy and SEM. Our findings suggest that hydrogen not only affect the Cu surface but also diffuses into the substrate, being stored in the bulk material during the thermal treatment of the substrate. The release of hydrogen species in the subsequent stages of growth can result in damage to the graphene layer or induce the nucleation of additional layers depending on the growth and pre-growth conditions. Therefore, the use of hydrogen during the annealing of ‘low purity Cu foils’ should be carefully planned in order to obtain high quality graphene via LPCVD.

  6. Implantation and annealing studies of Tm-implanted GaN

    International Nuclear Information System (INIS)

    Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500 deg. C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated with the Rutherford backscattering (RBS)/channelling technique. We observe that implantation at 500 deg. C considerably reduces the induced lattice damage and increases the amorphisation threshold. The lattice-site location of the implanted ions was determined by performing detailed channelling measurements for the and crystal directions. The results show that Tm ions mainly occupy substitutional Ga-sites directly after implantation and after annealing. The optical properties of the ion-implanted GaN films have been studied by room temperature cathodoluminescence (CL) measurements. Well-defined emission due to intra-4f shell transitions of the Tm3+ ions are observed in the blue spectral range at 477 nm and in the near infra-red (IR) at 804 nm

  7. Influence of annealing on the photodeposition of silver on periodically poled lithium niobate

    Science.gov (United States)

    Carville, N. Craig; Neumayer, Sabine M.; Manzo, Michele; Baghban, Mohammad-Amin; Ivanov, Ilia N.; Gallo, Katia; Rodriguez, Brian J.

    2016-02-01

    The preferential deposition of metal nanoparticles onto periodically poled lithium niobate surfaces, whereby photogenerated electrons accumulate in accordance with local electric fields and reduce metal ions from solution, is known to depend on the intensity and wavelength of the illumination and the concentration of the solution used. Here, it is shown that for identical deposition conditions (wavelength, intensity, concentration), post-poling annealing for 10 h at 200 °C modifies the surface reactivity through the reorientation of internal defect fields. Whereas silver nanoparticles deposit preferentially on the +z domains on unannealed crystals, the deposition occurs preferentially along 180° domain walls for annealed crystals. In neither case is the deposition selective; limited deposition occurs also on the unannealed -z domain surface and on both annealed domain surfaces. The observed behavior is attributed to a relaxation of the poling-induced defect frustration mediated by Li+ ion mobility during annealing, which affects the accumulation of electrons, thereby changing the surface reactivity. The evolution of the defect field with temperature is corroborated using Raman spectroscopy.

  8. Radiation damage structure in irradiated and annealed 440 WWER-Type reactor pressure vessel steels

    International Nuclear Information System (INIS)

    A review of irradiation damages in WWER-type RPV steels based on conventional Transmission Electron Microscopy investigations in a power reactor and a research reactor, is presented; the samples consist in Cr-Mo-V ferritic steel (15Kh2MFA type). The visible part of radiation-induced defects consists of very fine vanadium carbide precipitates, small dislocation loops and black dots (presumably corresponding to clusters and particle embryos formed from vacancies and solute-atoms (vanadium, copper, phosphorus) and carbon associated with vanadium. Radiation-induced defects are concentrated at dislocation substructure during irradiation in a power reactor, revealing the role of radiation-enhanced diffusion in damage structure forming process. Contrarily, the distribution of defects resulting from annealing of specimens irradiated in the research reactor is pre-determined by an homogenous distribution of radiation-induced defects prior to annealing. Increasing the number of re-irradiation and annealing cycles, the amount of dislocation loops among all defects seems to be growing. Simultaneously, the dislocation substructure recovers considerably. (authors). 14 refs., 11 figs., 3 tabs

  9. Microstructural evolution of ECAPed 1050 alloy under magnetic annealing

    Science.gov (United States)

    Cao, Yi-heng; Jia, Pin-feng; Wang, Kang; He, Li-zi; Wang, Ping; Cui, Jian-zhong

    2014-12-01

    Hardness and microstructure evolutions in 1050 aluminum alloy prepared by equal-channel angular pressing (ECAP) were investigated by hardness testing, optical microscopy, and transmission electron microscopy after samples were annealed at different temperatures for 1 h both in the absence and presence of a 12-T magnetic field. The results showed that the hardness of samples after magnetic annealing were lower than that of samples after normal annealing at 150-250°C, but it was higher than that of samples after normal annealing at >250°C. During annealing, the rate of softening was faster, and the grains were more homogeneous in 8-ECAPed samples than in 2-ECAPed samples. A rapid grain growth occurred when 2-ECAPed samples were annealed at high temperature (≥300°C). The magnetic field enhanced the mobility of dislocations and grain boundaries. A more homogeneous grain size was observed in samples prepared under an applied magnetic field.

  10. Visible photoluminescence from the annealed TEOS SiO2

    International Nuclear Information System (INIS)

    We report the visible photoluminescence (PL) excited by Ar-ion laser (514.5 nm) at room temperature from the TEOS SiO2 films annealed under the protection of flowing N2. It was found that the PL peak position located at between 610 and 640 nm does not significantly change with the annealing temperature (T anneal). The PL intensity of TEOS SiO2 films first exhibits a gradual increase as T anneal is below 850 deg. C; thereafter it keeps almost constant when 850 deg. C anneal anneal is increased up to 1200 deg. C. The results of Raman scattering, Fourier-Transform infrared absorption and X-ray photoelectron spectra indicate that the PL mechanism in TEOS SiO2 films should be attributed to the defect emission at the surface of the SiO2 film

  11. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  12. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; and James, R.B.

    2010-08-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  13. Modeling interacting dynamic networks: III. Extraordinary properties in a population of extreme introverts and extroverts

    CERN Document Server

    Liu, Wenjia; Bassler, Kevin E; Schmittmann, Beate; Zia, Royce K P

    2014-01-01

    Recently, we introduced dynamic networks with preferred degrees, showing that interesting properties are present in a single, homogeneous system as well as one with two interacting networks. While simulations are readily performed, analytic studies are challenging, due mainly to the lack of detailed balance in the dynamics. Here, we consider the two-community case in a special limit: a system of extreme introverts and extroverts - the XIE model. Surprising phenomena appear, even in this minimal model, where the only control parameters are the numbers of each subgroup: $N_{I,E}$. Specifically, an extraordinary transition emerges when $N_I$ crosses $N_E$. For example, the fraction of total number of I-E links jumps from $\\thicksim 0$ to $\\thicksim 1$. In a $N_I=N_E$ system, this fraction performs a pure random walk so that its distribution displays a flat plateau across most of $[0,1]$, with the edges vanishing as $(N_{I,E})^{-0.38}$ for large systems. Thus, we believe the XIE model exhibits an extreme Thouless...

  14. An Extraordinary Transition in a Minimal Adaptive Network of Introverts and Extroverts

    Science.gov (United States)

    Zia, R. K. P.; Liu, Wenjia; Schmittmann, B.

    We study a minimal adaptive network involving two populations, modeling the behavior of extreme introverts (I) and extroverts (E). When chosen to update, an I simply cuts one of its links at random while an E adds a link to any other yet-to-be-connected individual (node). In the steady state, the active links in the system are obviously only the cross-links between the I's and the E's. With no free parameters other than the numbers of each population (NI, NE), this minimal model displays remarkable properties: Through simulations using O(10)-O(1000) nodes, we find that the typical number of cross-links (X) fluctuates surprisingly close to the minimum or the maximum allowed values, depending on whether NI >NE or otherwise. At the transition point (i.e., NI = NE), the fraction X/(NINE) wanders across a substantial part of the unit interval, much like a pure random walk confined between two walls. Since this system can be mapped to a NINE Ising model with spin flip dynamics, we note that such fluctuations are far greater than those in the standard Ising model (at either first or second order transitions). Thus, we refer to the case here as an "extraordinary transition." Thanks to the restoration of detailed balance and the existence of a "Hamiltonian," several qualitative aspects of these remarkable phenomena can be understood analytically

  15. Extraordinary variability and sharp transitions in a maximally frustrated dynamic network

    Science.gov (United States)

    Liu, Wenjia; Schmittmann, Beate; Zia, R. K. P.

    2013-03-01

    Most previous studies of complex networks have focused on single, static networks. However, in the real world, networks are dynamic and interconnected. Inspired by the presence of extroverts and introverts in the general population, we investigate a highly simplified model of a social network, involving two types of nodes: one preferring the highest degree possible, and one preferring no connections whatsoever. There are only two control parameters in the model: the number of ``introvert'' and ``extrovert'' nodes, NI and NE. Our key findings are as follows: As a function of NI and NE, the system exhibits a highly unusual transition, displaying extraordinary fluctuations (as in 2nd order transitions) and discontinuous jumps (characteristic of 1st order transitions). Most remarkably, the system can be described by an Ising-like Hamiltonian with long-range multi-spin interactions and some of its properties can be obtained analytically. This is in stark contrast with other dynamic network models which rely almost exclusively on simulations. NSF-DMR-1005417/1244666 and and ICTAS Virginia Tech

  16. Extraordinary heat during the 1930s US Dust Bowl and associated large-scale conditions

    Science.gov (United States)

    Donat, Markus G.; King, Andrew D.; Overpeck, Jonathan T.; Alexander, Lisa V.; Durre, Imke; Karoly, David J.

    2016-01-01

    Unusually hot summer conditions occurred during the 1930s over the central United States and undoubtedly contributed to the severity of the Dust Bowl drought. We investigate local and large-scale conditions in association with the extraordinary heat and drought events, making use of novel datasets of observed climate extremes and climate reanalysis covering the past century. We show that the unprecedented summer heat during the Dust Bowl years was likely exacerbated by land-surface feedbacks associated with springtime precipitation deficits. The reanalysis results indicate that these deficits were associated with the coincidence of anomalously warm North Atlantic and Northeast Pacific surface waters and a shift in atmospheric pressure patterns leading to reduced flow of moist air into the central US. Thus, the combination of springtime ocean temperatures and atmospheric flow anomalies, leading to reduced precipitation, also holds potential for enhanced predictability of summer heat events. The results suggest that hot drought, more severe than experienced during the most recent 2011 and 2012 heat waves, is to be expected when ocean temperature anomalies like those observed in the 1930s occur in a world that has seen significant mean warming.

  17. Extraordinary mode absorption at the electron cyclotron harmonic frequencies as a tokamak electron temperature diagnostic

    International Nuclear Information System (INIS)

    An experimental study of extraordinary mode absorption at the semi-opaque second and third cyclotron harmonic frequencies has been performed on the Alcator C tokamak. A narrow beam of submillimetre laser radiation was used to illuminate the plasma in the horizontal plane, providing a continuous measurement of the one-pass, quasi-perpendicular transmission. Experimental electron cyclotron absorption (ECA) data have been found to agree with theoretical results for lowest significant order in finite density and finite Larmor radius. The ECA data have been used together with data for the tokamak electron density and magnetic field to determine local electron temperatures in the range 75 ≤ Te(eV) ≤ 3300, with a spatial resolution of ≤ 1 cm. Transmission during lower hybrid radiofrequency (LHRF) heating and current drive remained unaffected by suprathermal electrons because of their low density and the relativistic downshift of the absorbing harmonics away from the laser frequency. Therefore, this permitted the ECA technique to be used to measure the bulk plasma temperature during LHRF heating. A density dependent non-resonant attenuation was observed which, when present, was taken into account in the data analysis. (author)

  18. The extraordinary gamma-ray flare of the blazar 3C 454.3

    CERN Document Server

    Striani, E; Tavani, M; Vittorini, V; D'Ammando, F; Donnarumma, I; Pacciani, L; Pucella, G; Bulgarelli, A; Trifoglio, M; Gianotti, F; Giommi, P; Argan, A; Barbiellini, G; Caraveo, P; Cattaneo, P W; Chen, A W; Costa, E; De Paris, G; Del Monte, E; Di Cocco, G; Evangelista, Y; Feroci, M; Ferrari, A; Fiorini, M; Fuschino, F; Galli, M; Giuliani, A; Giusti, M; Labanti, C; Lazzarotto, F; Lipari, P; Longo, F; Marisaldi, M; Mereghetti, S; Moretti, E; Morselli, A; Pellizzoni, A; Perotti, F; Piano, G; Picozza, P; Pilia, M; Prest, M; Rapisarda, M; Rappoldi, A; Sabatini, S; Scalise, E; Soffitta, P; Trois, A; Vallazza, E; Zambra, A; Zanello, D; Pittori, C; Verrecchia, F; Santolamazza, P; Lucarelli, F; Colafrancesco, S; Antonelli, L A; Salotti, L

    2010-01-01

    We present the gamma-ray data of the extraordinary flaring activity above 100 MeV from the flat spectrum radio quasar 3C 454.3 detected by AGILE during the month of December 2009. 3C 454.3, that has been among the most active blazars of the FSRQ type since 2007, was detected in the gamma-ray range with a progressively rising flux since November 10, 2009. The gamma-ray flux reached a value comparable with that of the Vela pulsar on December 2, 2009. Remarkably, between December 2 and 3, 2009 the source more than doubled its gamma-ray emission and became the brightest gamma-ray source in the sky with a peak flux of F_{\\gamma,p} = (2000 \\pm 400) x 10^-8 ph cm^-2 s^-1 for a 1-day integration above 100 MeV. The gamma-ray intensity decreased in the following days with the source flux remaining at large values near F \\simeq (1000 \\pm 200) x 10^-8 ph cm^-2 s^-1 for more than a week. This exceptional gamma-ray flare dissipated among the largest ever detected intrinsic radiated power in gamma-rays above 100 MeV (L_{\\ga...

  19. Synthesis of MXene/Ag Composites for Extraordinary Long Cycle Lifetime Lithium Storage at High Rates.

    Science.gov (United States)

    Zou, Guodong; Zhang, Zhiwei; Guo, Jianxin; Liu, Baozhong; Zhang, Qingrui; Fernandez, Carlos; Peng, Qiuming

    2016-08-31

    A new MXene/Ag composite was synthesized by direct reduction of a AgNO3 aqueous solution in the presence of MXene (Ti3C2(OH)0.8F1.2). The as-received MXene/Ag composite can be deemed as an excellent anode material for lithium-ion batteries, exhibiting an extraordinary long cycle lifetime with a large capacity at high charge-discharge rates. The results show that Ag self-reduction in MXene solution is related to the existence of low-valence Ti. Reversible capacities of 310 mAh·g(-1) at 1 C (theoretical value being ∼320 mAh·g(-1)), 260 mAh·g(-1) at 10 C, and 150 mAh·g(-1) at 50 C were achieved. Remarkably, the composite withstands more than 5000 cycles without capacity decay at 1-50 C. The main reasons for the long cycle life with high capacity are relevant to the reduced interface resistance and the occurrence of Ti(II) to Ti(III) during the cycle process. PMID:27517615

  20. Direct measurement of the extraordinary optical momentum using a nano-cantilever

    CERN Document Server

    Antognozzi, M; Harniman, R; Senior, J; Hayward, R; Hoerber, H; Dennis, M R; Bekshaev, A Y; Bliokh, K Y; Nori, F

    2015-01-01

    Radiation pressure has been known since Kepler's observation that a comet's tail is always oriented away from the sun, and in the past centuries this phenomenon stimulated remarkable discoveries in electromagnetism, quantum physics and relativity [1-3]. In modern terms, the pressure of light is associated with the momentum of photons, which plays a crucial role in a variety of systems, from atomic [4-7] to astronomical [8,9] scales. Experience from these cases leads us to assume that the direction of the optical momentum and the radiation-pressure force are naturally aligned with the propagation of light, i.e., its wavevector. Here we report the direct observation of an extraordinary optical momentum and force directed perpendicular to the wavevector, and proportional to the optical spin (i.e., degree of circular polarization). This transverse spin-dependent optical force, a few orders of magnitude weaker than the usual radiation pressure, was recently predicted for evanescent waves [10] and other structured ...

  1. The role of particles annealing temperature on magnetorheological effect

    OpenAIRE

    Sedlačík, M.; Pavlínek, V.; Sáha, P.; Švrčinová, P. (Petra); Filip, P.

    2012-01-01

    The spinel nanocrystalline cobalt ferrite (CoFe.sub.2./sub.O.sub.4./sub.) particles were prepared via a solgel method followed by the annealing process. Their structural, magnetic and magnetorheological (MR) properties depending upon the annealing temperature were investigated. The X-ray diffraction analysis revealed that the higher annealing temperature, the larger grain size of CoFe.sub.2./sub.O.sub.4./sub. particles resulting in larger magnetic domains in particles. The saturation magnetiz...

  2. Measures of Fault Tolerance in Distributed Simulated Annealing

    OpenAIRE

    Prakash, Aaditya

    2012-01-01

    In this paper, we examine the different measures of Fault Tolerance in a Distributed Simulated Annealing process. Optimization by Simulated Annealing on a distributed system is prone to various sources of failure. We analyse simulated annealing algorithm, its architecture in distributed platform and potential sources of failures. We examine the behaviour of tolerant distributed system for optimization task. We present possible methods to overcome the failures and achieve fault tolerance for t...

  3. The role of particles annealing temperature on magnetorheological effect

    OpenAIRE

    Sedlačík, M.; Pavlínek, V.; Sáha, P.; Švrčinová, P. (Petra); Filip, P.

    2011-01-01

    The spinel cobalt ferrite (CoFe.sub.2./sub.O.sub.4./sub.) nanoparticles were prepared via a sol-gel method followed by the annealing process. Their structural, magnetic and magnetorheological (MR) properties depending upon the annealing temperature were investigated. The X-ray diffraction analysis revealed that the higher annealing temperature, the larger grain size of CoFe.sub.2./sub.O.sub.4./sub. particles resulting in larger magnetic domains in particles. The saturation magnetization, dete...

  4. Simulated Annealing of Two Electron Density Solution Systems

    OpenAIRE

    Neto, Mario de Oliveira; Alonso, Ronaldo Luiz; Leite, Fabio Lima; Jr, Osvaldo N. Oliveira; Polikarpov, Igor; Mascarenhas, Yvonne Primerano

    2008-01-01

    Many structural studies have been performed with a combination of SAXS and simulated annealing to reconstruct three dimensional models. Simulated annealing is suitable for the study of monodisperse, diluted and two-electron densities systems. In this chapter we showed how the simulated annealing procedure can be used to minimize the discrepancy between two functions: the simulated intensity and the experimental one-dimensional SAXS curve. The goal was to find the most probable form for a prot...

  5. Tunneling through high energy barriers in simulated quantum annealing

    OpenAIRE

    Crosson, Elizabeth; Deng, Mingkai

    2014-01-01

    We analyze the performance of simulated quantum annealing (SQA) on an optimization problem for which simulated classical annealing (SA) is provably inefficient because of a high energy barrier. We present evidence that SQA can pass through this barrier to find the global minimum efficiently. This demonstrates the potential for SQA to inherit some of the advantages of quantum annealing (QA), since this problem has been previously shown to be efficiently solvable by quantum adiabatic optimization.

  6. Annealing effect and stability of carbon nanotubes in hydrogen flame

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Annealing of carbon nanotubes (CNTs) by the hydrogen flame in air was investigated in this study. Raman spectroscopy and scanning electron microscopy were used to characterize the products. The peak width of Raman spectra decreased with the increase in the annealing time. The CNTs were not stable in the hydrogen flame and the etching rate of the CNTs by hydrogen flame was very high. The hydrogen flame annealing had some effects on improving the crystallinity of CNTs.

  7. Magnetic field annealing for improved creep resistance

    Energy Technology Data Exchange (ETDEWEB)

    Brady, Michael P.; Ludtka, Gail M.; Ludtka, Gerard M.; Muralidharan, Govindarajan; Nicholson, Don M.; Rios, Orlando; Yamamoto, Yukinori

    2015-12-22

    The method provides heat-resistant chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloys having improved creep resistance. A precursor is provided containing preselected constituents of a chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloy, at least one of the constituents for forming a nanoscale precipitate MaXb where M is Cr, Nb, Ti, V, Zr, or Hf, individually and in combination, and X is C, N, O, B, individually and in combination, a=1 to 23 and b=1 to 6. The precursor is annealed at a temperature of 1000-1500.degree. C. for 1-48 h in the presence of a magnetic field of at least 5 Tesla to enhance supersaturation of the M.sub.aX.sub.b constituents in the annealed precursor. This forms nanoscale M.sub.aX.sub.b precipitates for improved creep resistance when the alloy is used at service temperatures of 500-1000.degree. C. Alloys having improved creep resistance are also disclosed.

  8. Annealing Would Improve beta" - Alumina Solid Electrolyte

    Science.gov (United States)

    Williams, Roger; Homer, Margie; Ryan, Margaret; Cortez, Roger; Shields, Virgil; Kisor, Adam

    2003-01-01

    A pre-operational annealing process is under investigation as a potential means of preventing a sudden reduction of ionic conductivity in a Beta"-alumina solid electrolyte (BASE) during use. On the basis of tests, the sudden reduction of ionic conductivity, followed by a slow recovery, has been found to occur during testing of the solid electrolyte and electrode components of an alkali metal thermal-to-electric converter (AMTEC) cell. At this time, high-temperature tests of limited duration have indicated the superiority of the treated BASE, but reproducible tests over thousands of hours are necessary to confirm that microcracking has been eliminated. The ionic conductivity of the treated BASE is also measured to be higher than untreated BASE at 1,073 K in low-pressure sodium vapor. Microcracking resulting in loss of conductivity was not observed with treated BASE in one high-temperature experiment, but this result must be duplicated over very long testing times to be sure of the effect. Shorter annealing times (10 to 20 hours) were found to result in significantly less loss of mass; it may be necessary for the packed powder mixture to evolve some Na2O before the Na2O can leave the ceramic.

  9. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    Ladislav Rosocha

    2015-07-01

    Full Text Available Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem.Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a well-known method from statistical thermodynamics. We define hard constraints, which are linked to legal and working regulations, and minimize the violations of soft constraints, which are related to the quality of work, psychic, and work-life balance of staff.Findings: On a sample of 60 physicians and nurses from gynecology department we generated monthly schedules and optimized their preferences in terms of soft constraints. Our results indicate that the final value of objective function optimized by proposed algorithm is more than 18-times better in violations of soft constraints than initially generated random schedule that satisfied hard constraints.Research Limitation/implication: Even though the global optimality of final outcome is not guaranteed, desirable solutionwas obtained in reasonable time. Originality/Value of paper: We show that designed algorithm is able to successfully generate schedules regarding hard and soft constraints. Moreover, presented method is significantly faster than standard schedule generation and is able to effectively reschedule due to the local neighborhood search characteristics of simulated annealing.

  10. Annealing conditions for intrinsic CdTe

    Science.gov (United States)

    Berding, M. A.

    1999-01-01

    Equilibrium native defect densities in CdTe are calculated from ab initio methods, and compared with experimental results. We find that CdTe is highly compensated p type under tellurium-saturated conditions, with the cadmium vacancy as the dominant acceptor and the tellurium antisite as the compensating donor. This finding is in agreement with recent experiments that find a much larger deviation from stoichiometry than would be predicted by the electrically active defects. Under cadmium-saturated conditions, cadmium interstitials are predicted to dominate and the material is found to be n type. Native defect concentrations and the corresponding carrier concentrations are predicted as a function of processing conditions, and can serve as a guide to postgrowth anneals to manipulate the conductivity of undoped material for applications in x- and γ-ray spectrometers. Furthermore, we show that by choosing appropriate annealing conditions and extrinsic dopants, one can increase the operating efficiency of nuclear spectrometers by reducing the density of specific native defects that produce midgap trapping states.

  11. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He+-ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  12. Dielectric Signatures of Annealing in Glacier Ice

    Science.gov (United States)

    Grimm, R. E.; Stillman, D. E.; MacGregor, J. A.

    2015-12-01

    We analyzed the dielectric spectra of 49 firn and ice samples from ice sheets and glaciers to better understand how differing ice formation and evolution affect electrical properties. The dielectric relaxation of ice is well known and its characteristic frequency increases with the concentration of soluble impurities in the ice lattice. We found that meteoric ice and firn generally possess two such relaxations, indicating distinct crystal populations or zonation. Typically, one population is consistent with that of relatively pure ice, and the other is significantly more impure. However, high temperatures (e.g., temperate ice), long residence times (e.g., ancient ice from Mullins Glacier, Antarctica), or anomalously high impurity concentrations favor the development of a single relaxation. These relationships suggest that annealing causes two dielectrically distinct populations to merge into one population. The dielectric response of temperate ice samples indicates increasing purity with increasing depth, suggesting final rejection of impurities from the lattice. Separately, subglacially frozen samples from the Vostok 5G ice core possess a single relaxation whose variable characteristic frequency likely reflects the composition of the source water. Multi-frequency electrical measurements on cores and in the field can track annealing of glacier ice.

  13. Multiple Interconversions of the E' and Oxygen-Hole Defect Centers in High-Purity Amorphous Silica during Anneal-Interrupted x Irradiation

    Science.gov (United States)

    Zhang, Lin; Mashkov, V. A.; Leisure, R. G.

    1995-02-01

    Multiple interconversions of E' centers and peroxy radicals have been observed for the first time by means of anneal-interrupted x-irradiation experiments. It is shown that each of these defects can serve as the precursor of the other; under thermal anneal an E' center can convert to a peroxy radical due to the capture of an oxygen molecule, and under irradiation the peroxy radical can covert to an E' center due to irradiation-induced release of oxygen. The results for the defect production and anneal behavior are well described in terms of simple stretched-exponential defect-reaction kinetics.

  14. Study of rapid stress annealed nano-crystalline Fe74.5Cu1Nb3Si15.5B6 alloy

    International Nuclear Information System (INIS)

    Rapid stress annealing induced changes in structural and magnetic properties in Fe74.5Cu1Nb3Si15.5B6 are reported. Obtained results suggest changes in spin texture with preferred orientation along ribbon axis. Fraction of A site in the DO3 lattice occupied by Si atoms, increases, with increase of applied stress during annealing. Volume fraction of the nanograins up to 60% (exhibiting quite similar mean grain diameter ∼9 nm) is observed. Lattice parameter values suggest that Si content in the nanocrystalline phase is between 14% and 19% and increase of lattice parameter suggests the elongation of the unit cell. Studied stress annealed samples exhibit soft magnetic behavior (coercive field ranging between 4 and 8 Am-1). Stress annealing reduces permeability whereas anisotropy field increases almost linearly exhibiting the induction of uniaxial and perpendicular to the ribbon axis anisotropy. Obtained stress-induced-anisotropy constant values range between 50 and 2,140 Jm-3.

  15. Impurity and defect interactions during laser thermal annealing in Ge

    Science.gov (United States)

    Milazzo, R.; Impellizzeri, G.; Piccinotti, D.; La Magna, A.; Fortunato, G.; De Salvador, D.; Carnera, A.; Portavoce, A.; Mangelinck, D.; Privitera, V.; Napolitani, E.

    2016-01-01

    The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un-implanted and implanted with As or B are processed by LTA as well as characterized in terms of chemical (1D and 3D), electrical, and strain profiling. The clustering of As is directly measured by 3D chemical profiling and correlated with its partial electrical activation along with a reduction of the lattice strain induced by As atoms. A semi-quantitative microscopic model involving the interaction with mobile As-vacancy (AsV) complexes is proposed to describe the clustering mechanism. Boron is shown to follow different clustering behavior that changes with depth and marked by completely different strain levels. Oxygen penetrates from the surface into all the samples as a result of LTA and, only in un-implanted Ge, it occupies an interstitial position inducing also positive strain in the lattice. On the contrary, data suggest that the presence of As or B forces O to assume different configurations with negligible strain, through O-V or O-B interactions for the two dopant species, respectively. These data suggest that LTA does not inject a significant amount of vacancies in Ge, at variance with Si, unless As atoms or possibly other n-type dopants are present. These results have to be carefully considered for modeling the LTA process in Ge and its implementation in technology.

  16. Impurity and defect interactions during laser thermal annealing in Ge

    Energy Technology Data Exchange (ETDEWEB)

    Milazzo, R., E-mail: ruggero.milazzo@unipd.it; De Salvador, D.; Carnera, A.; Napolitani, E. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy); Impellizzeri, G.; Privitera, V. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Piccinotti, D. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy); IM2NP, CNRS-Universités d' Aix-Marseille et de Toulon, Case 142, 13397 Marseille Cedex 20 (France); La Magna, A. [CNR-IMM, Z.I. VIII Strada 5, 95121 Catania (Italy); Fortunato, G. [CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Portavoce, A.; Mangelinck, D. [IM2NP, CNRS-Universités d' Aix-Marseille et de Toulon, Case 142, 13397 Marseille Cedex 20 (France)

    2016-01-28

    The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un-implanted and implanted with As or B are processed by LTA as well as characterized in terms of chemical (1D and 3D), electrical, and strain profiling. The clustering of As is directly measured by 3D chemical profiling and correlated with its partial electrical activation along with a reduction of the lattice strain induced by As atoms. A semi-quantitative microscopic model involving the interaction with mobile As-vacancy (AsV) complexes is proposed to describe the clustering mechanism. Boron is shown to follow different clustering behavior that changes with depth and marked by completely different strain levels. Oxygen penetrates from the surface into all the samples as a result of LTA and, only in un-implanted Ge, it occupies an interstitial position inducing also positive strain in the lattice. On the contrary, data suggest that the presence of As or B forces O to assume different configurations with negligible strain, through O-V or O-B interactions for the two dopant species, respectively. These data suggest that LTA does not inject a significant amount of vacancies in Ge, at variance with Si, unless As atoms or possibly other n-type dopants are present. These results have to be carefully considered for modeling the LTA process in Ge and its implementation in technology.

  17. A Parallel Genetic Simulated Annealing Hybrid Algorithm for Task Scheduling

    Institute of Scientific and Technical Information of China (English)

    SHU Wanneng; ZHENG Shijue

    2006-01-01

    In this paper combined with the advantages of genetic algorithm and simulated annealing, brings forward a parallel genetic simulated annealing hybrid algorithm (PGSAHA) and applied to solve task scheduling problem in grid computing .It first generates a new group of individuals through genetic operation such as reproduction, crossover, mutation, etc, and than simulated anneals independently all the generated individuals respectively.When the temperature in the process of cooling no longer falls, the result is the optimal solution on the whole.From the analysis and experiment result, it is concluded that this algorithm is superior to genetic algorithm and simulated annealing.

  18. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  19. Structure and magnetism of Ni/Ti multilayers on annealing

    Indian Academy of Sciences (India)

    Surendra Singh; Saibal Basu; P Bhatt

    2008-11-01

    Neutron reflectometry study has been carried out in unpolarized (NR) and polarized (PNR) mode to understand the structure and magnetic properties of alloy formation at the interfaces of Ni/Ti multilayers on annealing. The PNR data from annealed sample shows a noticeable change with respect to the as-deposited sample. These changes are: a prominent shift of the multilayer Bragg peak to a higher angle and a decrease in the intensity of the Bragg peak. The PNR data from annealed sample revealed the formation of magnetically dead alloy layers at the interfaces. Changes in roughness parameters of the interfaces on annealing were also observed in the PNR data.

  20. A laboratory flash furnace for strand annealing simulation

    Science.gov (United States)

    Page, J. H. R.

    1995-08-01

    The economic production of CRML steels depends on the use of continuous annealing. Successful development of improved CRML steels, the compositions of which have moved to lower carbon contents, is critically dependent on the rate of heating and its effect on transformation characteristics. As a result, accurate simulation of annealing conditions, particularly the heating rate, is essential. With this in mind, European Electrical Steels set criteria for a laboratory annealing facility that would, das far as was practicable, reproduce day- to- day continuous furnace operation. This paper outlines the design criteria, construction, and operation of the resulting annealing facility.