The role and effect of residual stress on pore generation during anodization of aluminium thin films

International Nuclear Information System (INIS)

Liao, M.W.; Chung, C.K.

2013-01-01

Highlights: •Al films of varying residual stress were prepared by sputtering. •Variation of the residual stress in the Al films influences pore growth during anodization. •The change in average pore size with residual stress is fairly small. •Interaction of residual stress with oxide growth stress leads to change in structure. •Residual tensile stress increases the pore density of porous alumina. -- Abstract: The role and effect of residual stress on pore generation of anodized aluminium oxide (AAO) have been investigated into anodizing the various-residual-stresses aluminium films. The plane stresses were characterised by X-ray diffraction with sin 2 ψ method. The pore density roughly linearly increased with residual stress from 64.6 (−132.5 MPa) to 90.5 pores/μm 2 (135.9 MPa). However, the average pore size around 40 nm was not changed significantly except for the rougher film. The tensile residual stress lessened the compressive oxide growth stress to reduce AAO plastic deformation for higher pore density. The findings provide new foundations for realizing AAO films on silicon

Effect of Sintering Temperature on the Properties of Aluminium-Aluminium Oxide Composite Materials

Directory of Open Access Journals (Sweden)

Dewan Muhammad Nuruzzaman

2016-12-01

Full Text Available In this study, aluminium-aluminium oxide (Al-Al2O3 metal matrix composites of different weight percentage reinforcements of aluminium oxide were processed at different sintering temperatures. In order to prepare these composite specimens, conventional powder metallurgy (PM method was used. Three types specimens of different compositions such as 95%Al+5%Al2O3, 90%Al+10%Al2O3 and 85%Al+15%Al2O3 were prepared under 20 Ton compaction load. Then, all the specimens were sintered in a furnace at two different temperatures 550oC and 580oC. In each sintering process, two different heating cycles were used. After the sintering process, it was observed that undistorted flat specimens were successfully prepared for all the compositions. The effects of sintering temperature and weight fraction of aluminium oxide particulates on the density, hardness and microstructure of Al-Al2O3 composites were observed. It was found that density and hardness of the composite specimens were significantly influenced by sintering temperature and percentage aluminium oxide reinforcement. Furthermore, optical microscopy revealed that almost uniform distribution of aluminium oxide reinforcement within the aluminium matrix was achieved.

Dispersion strengthening of aluminium-aluminium-oxide products

DEFF Research Database (Denmark)

Hansen, Niels

1970-01-01

The true stress-true strain curves at room temperature and at 400°C were determined for various types of aluminium-aluminium-oxide products containing from 0.2 to 4.7 weight per cent of aluminium oxide. The effect of particles on the initial flow stress and the flow stress for 0.2% offset at room...... temperature and at 400°C is in agreement with Orowan's theory. The increase in flow stress at room temperature for strain values below 3 per cent was related to the plastic strain by the equation σ-σoy=k1ε 1/2, where σoy is the initial flow stress and where k1 increases for increasing volume fraction...... and decreasing particle size of the dispersed particles. A general expression for k1 was derived for the relationship between the dislocation density and the strain in dispersion-strengthened products...

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

International Nuclear Information System (INIS)

Araiza, J J; Sanchez, O

2009-01-01

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr 3 N 4 (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Steam generated conversion coating on aluminium alloys

DEFF Research Database (Denmark)

Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

Aluminium and its alloys are widely used in aerospace industry owing to their high strength to weight ratio. The surface of aluminium under normal conditions has a thin oxide film (2.5-10 nm) responsible for its inherent corrosion resistance. This oxide film can further be converted or transformed...... into functional conversion coatings in order to enhance corrosion resistance and adhesion to paint systems. Chromium based conversion coatings have been extensively used on aluminium alloys to improve adhesion of subsequent paint layers and corrosion resistance. However, the use of hexavalent chromium is strictly...... regulated due to its toxic nature and suspected carcinogenicity. So, it is highly imperative to develop other alternatives for chrome conversion coatings. Treatment of aluminium with natural water at elevated temperatures results in the formation of different forms of aluminium oxide (γ-AlO(OH) , Al(OH)3...

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Araiza, J J [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Paseo a la Bufa esq, Calzada Solidaridad s/n 98060, Zacatecas (Mexico); Sanchez, O [Departamento de Fisica e Ingenieria de Superficies, Instituto de Ciencia de Materiales de Madrid-CSIC, C/ Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain)], E-mail: olgas@icmm.csic.es

2009-06-07

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr{sub 3}N{sub 4} (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

Crystal structure and phase composition of aluminium thin films with holmium additions

International Nuclear Information System (INIS)

Koleshko, V.M.; Belitskij, V.F.; Obukhov, V.E.; Rumak, N.V.; Urban, T.P.

1984-01-01

The effect of holmium additions on the crystal structure and phase composition of thin aluminium films has been studied. A regularity in grain size changes in aluminium thin films versus the holmium content in them is established. The holmium introduction is shown to result in the appearance of axial texture in the aluminium films, the texture axis being determined by the quantity of the addition. During heat treatment of the aluminium films, containing holmium additions, in the range of low ( approximately 100-200 deg C) annealing temperatures holmium monohydroxide is formed, and at annealing temperatures 300 deg C 0 3 is formed

Dielectric aluminium phosphate thin films. Couches minces dielectriques de phosphate d'aluminium

Energy Technology Data Exchange (ETDEWEB)

Daviero, S. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Avinens, C. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Ibanez, A. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Giuntini, J.C. (Lab. Physicochimie des Materiaux Solides, 34 -Montpellier (France)); Philippot, E. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France))

1993-04-01

Aluminium phosphate thin films on silicium substrate have been carried out from tributylphosphate and aluminium acetylacetonate precursors in solution through the ''pyrosol'' process. It can be observed a large range of chemical analysis in terms of experimental conditions. These thin films have been characterized by X-ray diffraction and infrared spectrometry. Their electrical characteristics, defined from direct current and alternative current measurements, are quite different to those of the crystallized phosphate and can be explained by P-O and Al-O ''dangling bond'' existence. (orig.).

TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

Directory of Open Access Journals (Sweden)

Silvia Maioco

2013-03-01

Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

Corrosion behaviour of nanometre sized cerium oxide and titanium oxide incorporated aluminium in NaCl solution

International Nuclear Information System (INIS)

Ashraf, P. Muhamed; Edwin, Leela

2013-01-01

Highlights: ► Corrosion resistant aluminium incorporated with nano oxides of cerium and titanium. ► 0.2% nano CeO 2 and 0.05% nano TiO 2 showed increased corrosion resistance. ► Nano TiO 2 concentration influenced the optimum performance of the material. ► Comparison of Micro and nano CeO 2 and TiO 2 aluminium showed the latter is best. - Abstract: The study highlights the development of an aluminium matrix composite by incorporating mixture of nanometre sized cerium oxide and titanium oxide in pure aluminium and its corrosion resistance in marine environment. The mixed nanometre sized oxides incorporated aluminium exhibited improved microstructure and excellent corrosion resistance. Corrosion resistance depends on the concentration of nanometre sized titanium oxide. Electrochemical characteristics improved several folds in nanometre sized mixed oxides incorporated aluminium than micrometre sized oxides incorporated aluminium.

Study of ionic movements during anodic oxidation of nitrogen-implanted aluminium

International Nuclear Information System (INIS)

Terwagne, G.; Lucas, S.; Bodart, F.; Sorensen, G.; Jensen, H.

1990-01-01

In recent years there has been a considerable interest in synthesizing aluminium nitrides by ion implantation in order to modify the tribological properties of aluminium. The growth of an oxide layer by anodic process on these synthesized aluminium nitrides gives an interesting oxide-on-semiconductor material with surprising dynamic and decorative properties. During the anodic oxidation, ionic movements are involved in the near-surface region of the aluminium material; these ionic movements have been studied by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) on thin aluminium foils (7000 A) preimplanted with nitrogen and post-oxidized in an ammonium pentaborate solution. The growth of the oxide layer is reduced when the aluminium is preimplanted with nitrogen: the speed of oxidation depends on the implantation conditions (energy and fluence). Moreover, the aluminium nitride can be dissolved when all metallic aluminium staying between the surface and the AlN are consumed by the anodic process. (orig.)

Structural evolution in nanoporous anodic aluminium oxide

International Nuclear Information System (INIS)

Rocca, Emmanuel; Vantelon, Delphine; Reguer, Solenn; Mirambet, François

2012-01-01

Nanoporous and self-organized layers of aluminium alloys are used in many applications as membranes, templates for nanometric objects or corrosion protection for aluminium alloys. The use of this nanometric structure widely remains empirical, especially in the case of very small pores ( 4 into AlO 6 cluster and a partial release of sulphate ions are an important chemical transformation of the amorphous structure. This structural transformation defines the chemistry (pH and surface charge) inside the nanopores, the ageing behaviour and the possible incorporation or diffusion of chemical species in the nanostructure. Highlights: ► Investigations of local chemical environment of aluminium atoms in anodic aluminium oxide. ► The oxide structure is constituted by 2/3 of aluminium in tetrahedral coordination 1/3 in octahedral coordination. ► In contact with water, AlO 4 clusters are transformed into AlO 6 cluster and the aluminium sulphate bonds are hydrolysed. ► These transformations induce a pH decrease inside the nanostructure.

Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

Science.gov (United States)

Grove, C. A.; Judd, G.; Ansell, G. S.

1972-01-01

Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

Self-sealing of unsealed aluminium anodic oxide films in very different atmospheres

Directory of Open Access Journals (Sweden)

González, J. A.

2003-12-01

Full Text Available It is widely believed that the corrosion resistance behaviour of bare aluminium in natural environments is superior to that of unsealed anodised aluminium. However, results obtained in the exposure of unsealed anodised aluminium specimens with three different film thicknesses, in 9 atmospheres of Ibero-America with salinity levels between 3.9 and 517 mg.m^-2.d^-1 chloride, clearly shows the reverse to be true. After a sufficient time, which is shorter the higher the precipitation rate and the environmental relative humidity, a self-sealing process takes place, leading to coatings that surpass the quality standards demanded in industrial practice. Anodic films, sealed and unsealed, are protective coatings whose quality improves with ageing in most natural environments.

Está muy difundida la idea de que el comportamiento del aluminio es superior al del aluminio anodizado y sin sellar, desde el punto de vista de la resistencia a la corrosión, en los ambientes naturales. Sin embargo, los resultados obtenidos en la exposición de anodizados sin sellar, de tres espesores diferentes, a 9 atmósferas de Iberoamérica, con salinidades comprendidas entre 3,9 y 517 mg.m^-2.d^-1 de cloruros, muestran, sin lugar a dudas, lo contrario. Con tiempo suficiente, tanto más rápidamente cuanto mayor sean las precipitaciones y la humedad relativa ambiental, tiene lugar un proceso de autosellado que conduce a recubrimientos que superan las normas de calidad exigidas en la práctica industrial. Los anodizados, sellados y sin sellar, son recubrimientos protectores que mejoran su calidad, en la mayoría de los ambientes naturales, con el envejecimiento.

Physical-mechanical and electrical properties of aluminium anodic films

Energy Technology Data Exchange (ETDEWEB)

Dima, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania); Anicai, L. [Research and Design Inst. for Electr. Eng., Bucharest (Romania)

1995-11-01

Mechanical, thermal and electrical properties of aluminium anodic films obtained by continuously anodization of Al wires of 4.5 mm diameter and Al sheets of 40 x 0.2 mm (Al min.99.5% purity), using an electrolyte based on oxalic acid, citric acid, boric acid, isopropilic alcohol, were investigated. The thickness of Al anodic oxide layers was 5 {+-} 1{mu}, 10 {+-} 1{mu}, for Al sheet, respectively 5 {+-} 1{mu}, 10 {+-} 1{mu}, 15 {+-} 1{mu}, for Al wire. To establish the influence of anodic film formation on mechanical parameters, measurements of breaking strength and relative elongation at break for anodized and non-anodized Al conductors, were made. In order to electrically characterize the anodic films, the breakdown voltage for different curvature radii of the conductor, between 50 - 12.5 mm, were measured. The influence of the layer thickness, as well as of the cracking during its bending, was established, too. To test the thermal resistance of the insulating anodic films, the Al conductors were subjected to 1 - 5 cyclic thermal shocks at 500 C. After the experimentals were done, it was found that Al anodic films of 5 {+-} 1{mu} may assure a breakdown voltage of minimum 200 V, for coils having a curvature radius greater than 12.5 mm and operating temperatures up to 500 C. From mechanical point of view, anodic oxide film determines a relatively reinforcing of Al conductor, but it doesn`t influence its functional properties. (orig.)

Corrosion inhibition of 7000 series aluminium alloys with cerium diphenyl phosphate

Energy Technology Data Exchange (ETDEWEB)

Hill, Julie-Anne [Department of Materials Engineering and Australian Centre of Excellence for Electromaterials Science, Wellington Rd, Monash University, Clayton, Victoria (Australia); Markley, Tracey [Department of Materials Engineering and Australian Centre of Excellence for Electromaterials Science, Wellington Rd, Monash University, Clayton, Victoria (Australia); CSIRO, Division of Materials Science and Technology, Clayton, Victoria (Australia); Forsyth, Maria, E-mail: maria.forsyth@deakin.edu.au [Department of Materials Engineering and Australian Centre of Excellence for Electromaterials Science, Wellington Rd, Monash University, Clayton, Victoria (Australia); Howlett, Patrick C. [Department of Materials Engineering and Australian Centre of Excellence for Electromaterials Science, Wellington Rd, Monash University, Clayton, Victoria (Australia); Hinton, Bruce R.W. [Department of Materials Engineering and Australian Centre of Excellence for Electromaterials Science, Wellington Rd, Monash University, Clayton, Victoria (Australia); Defence Science and Technology Organisation, Melbourne, Victoria (Australia)

2011-02-03

Graphical abstract: Scanning electron micrographs of microtomed surface shows pristine surface free of corrosion related 'mud cracking' inset for an inhibited AA7050 specimen when only 150 ppm Ce(dpp)3 is present in 0.1 M NaCl solution. Display Omitted Research highlights: > The thin film of hydrolysis products of Ce(dpp)3 and aluminium oxide is proposed to cause the inhibition. > The film consists of discrete Ce rich particles and a thin film over the matrix of Ce, P and Al oxides. > Discrete deposition of Ce is specifically influenced by Cu rich intermetallics. - Abstract: Cerium diphenyl phosphate (Ce(dpp){sub 3}) has previously been shown to be a strong corrosion inhibitor for aluminium-copper magnesium alloy AA2024-T3 and AA7075 in chloride solutions. Surface characterisation including SEM and ToF-SIMS coupled with electrochemical impedance spectroscopy (EIS) measurements are used to propose a mechanism of corrosion inhibition which appears to involve the formation of a complex oxide film of aluminium and cerium also incorporating the organophosphate component. The formation of a thin complex film consisting of hydrolysis products of the Ce(dpp){sub 3} compound and aluminium oxide is proposed to lead to the observed inhibition. SEM analysis shows that some intermetallics favour the creation of thicker deposits predominantly containing cerium oxide compounds.

Incorporation of transition metal ions and oxygen generation during anodizing of aluminium alloys

International Nuclear Information System (INIS)

Habazaki, H.; Konno, H.; Shimizu, K.; Nagata, S.; Skeldon, P.; Thompson, G.E.

2004-01-01

Enrichment of nickel at the alloy/film interface and incorporation of nickel species into the anodic film have been examined for a sputtering-deposited Al-1.2at.%Ni alloy in order to assist understanding of oxygen generation in barrier anodic alumina films. Anodizing of the alloy proceeds in two stages similarly to other dilute aluminium alloys, for example Al-Cr and Al-Cu alloys, where the Gibbs free energies per equivalent for formation of alloying element oxide exceeds the value for alumina. In the first stage, a nickel-free alumina film is formed, with nickel enriching in an alloy layer, 2 nm thick, immediately beneath the anodic oxide film. In the second stage, nickel atoms are oxidized together with aluminium, with oxygen generation forming gas bubbles within the anodic oxide film. This stage commences after accumulation of about 5.4 x 10 15 nickel atoms cm -2 in the enriched alloy layer. Oxygen generation also occurs when a thin layer of the alloy, containing about 2.0 x 10 19 nickel atoms m -2 , on electropolished aluminium, is completely anodized, contrasting with thin Al-Cr and Al-Cu alloy layers on electropolished aluminium, for which oxygen generation is essentially absent. A mechanism of oxygen generation, based on electron impurity levels of amorphous alumina and local oxide compositions, is discussed in order to explain the observations

Volatilisation and oxidation of aluminium scraps fed into incineration furnaces

International Nuclear Information System (INIS)

Biganzoli, Laura; Gorla, Leopoldo; Nessi, Simone; Grosso, Mario

2012-01-01

Highlights: ► Aluminium packaging partitioning in MSW incineration residues is evaluated. ► The amount of aluminium packaging recoverable from the bottom ashes is evaluated. ► Aluminium packaging oxidation rate in the residues of MSW incineration is evaluated. ► 80% of aluminium cans, 51% of trays and 27% of foils can be recovered from bottom ashes. - Abstract: Ferrous and non-ferrous metal scraps are increasingly recovered from municipal solid waste incineration bottom ash and used in the production of secondary steel and aluminium. However, during the incineration process, metal scraps contained in the waste undergo volatilisation and oxidation processes, which determine a loss of their recoverable mass. The present paper evaluates the behaviour of different types of aluminium packaging materials in a full-scale waste to energy plant during standard operation. Their partitioning and oxidation level in the residues of the incineration process are evaluated, together with the amount of potentially recoverable aluminium. About 80% of post-consumer cans, 51% of trays and 27% of foils can be recovered through an advanced treatment of bottom ash combined with a melting process in the saline furnace for the production of secondary aluminium. The residual amount of aluminium concentrates in the fly ash or in the fine fraction of the bottom ash and its recovery is virtually impossible using the current eddy current separation technology. The average oxidation levels of the aluminium in the residues of the incineration process is equal to 9.2% for cans, 17.4% for trays and 58.8% for foils. The differences between the tested packaging materials are related to their thickness, mechanical strength and to the alloy.

Formation of epitaxial Al 2O 3/NiAl(1 1 0) films: aluminium deposition

Science.gov (United States)

Lykhach, Y.; Moroz, V.; Yoshitake, M.

2005-02-01

Structure of epitaxial Al 2O 3 layers formed on NiAl(1 1 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5 nm-thick Al 2O 3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al 2O 3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5 nm-thick Al 2O 3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070 K. The Al 2O 3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al 2O 3 layer follows the structure of 0.5 nm thick Al 2O 3 film, although a tilting of Al 2O 3(1 1 1) surface plane with respect to NiAl(1 1 0) surface appeared after Al deposition.

Volatilisation and oxidation of aluminium scraps fed into incineration furnaces

Energy Technology Data Exchange (ETDEWEB)

Biganzoli, Laura, E-mail: laura.biganzoli@mail.polimi.it [Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy); Gorla, Leopoldo; Nessi, Simone; Grosso, Mario [Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Aluminium packaging partitioning in MSW incineration residues is evaluated. Black-Right-Pointing-Pointer The amount of aluminium packaging recoverable from the bottom ashes is evaluated. Black-Right-Pointing-Pointer Aluminium packaging oxidation rate in the residues of MSW incineration is evaluated. Black-Right-Pointing-Pointer 80% of aluminium cans, 51% of trays and 27% of foils can be recovered from bottom ashes. - Abstract: Ferrous and non-ferrous metal scraps are increasingly recovered from municipal solid waste incineration bottom ash and used in the production of secondary steel and aluminium. However, during the incineration process, metal scraps contained in the waste undergo volatilisation and oxidation processes, which determine a loss of their recoverable mass. The present paper evaluates the behaviour of different types of aluminium packaging materials in a full-scale waste to energy plant during standard operation. Their partitioning and oxidation level in the residues of the incineration process are evaluated, together with the amount of potentially recoverable aluminium. About 80% of post-consumer cans, 51% of trays and 27% of foils can be recovered through an advanced treatment of bottom ash combined with a melting process in the saline furnace for the production of secondary aluminium. The residual amount of aluminium concentrates in the fly ash or in the fine fraction of the bottom ash and its recovery is virtually impossible using the current eddy current separation technology. The average oxidation levels of the aluminium in the residues of the incineration process is equal to 9.2% for cans, 17.4% for trays and 58.8% for foils. The differences between the tested packaging materials are related to their thickness, mechanical strength and to the alloy.

Usage of neural network to predict aluminium oxide layer thickness.

Science.gov (United States)

Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

2015-01-01

This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

Directory of Open Access Journals (Sweden)

Peter Michal

2015-01-01

Full Text Available This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer.

Photochemical preparation of aluminium oxide layers via vacuum ultraviolet irradiation of a polymeric hexanoato aluminium complex

International Nuclear Information System (INIS)

Wennrich, L.; Khalil, H.; Bundesmann, C.; Decker, U.; Gerlach, J.W.; Helmstedt, U.; Manova, D.; Naumov, S.; Prager, L.

2013-01-01

By means of photochemical conversion of thin layers of a polymeric hexanoato aluminium complex as the precursor, thin aluminium oxide layers were prepared onto silicon wafers. The precursor compound was synthesized and characterized by several analytical techniques like NMR, FTIR, XPS, ICP, and found to be a polymeric aluminium-containing coordination compound which has been proposed to be a hydroxo-bridged aluminium chain with pendant hexanoyl side-chains ascertained as catena-poly[{di(κ-O,O-hexanoato)aluminium}(μ-hydroxo)] (PHAH). Thin layers deposited from a solution of PHAH in toluene onto silicon wafers were irradiated using VUV radiation from a xenon excimer lamp. The layers were characterized by XPS, XRD, XRR, and spectroscopic ellipsometry. VUV radiation with a radiant exposure of E = 36 J cm −2 led to almost carbon-free amorphous layers with a composition close to that of alumina having a density of about 2.1 g cm −3 . Thus, using the example of a polymeric aluminium complex, the potential of the photochemical conversion of metal complexes into oxides could be shown as an alternative method, in addition to sol–gel techniques, for the generation of thin plane metal-oxide layers at normal temperature and pressure. Highlights: ► A polymeric aluminium complex was synthesized and characterized by NMR, FTIR, XPS and ICP. ► Thin layers of the compound were irradiated using vacuum-UV radiation and converted to AlO x . ► Quantum-chemical calculations explain the conversion mechanism.

Surface treatments for aluminium alloys

Science.gov (United States)

Ardelean, M.; Lascău, S.; Ardelean, E.; Josan, A.

2018-01-01

Typically, in contact with the atmosphere, the aluminium surface is covered with an aluminium oxide layer, with a thickness of less than 1-2μm. Due to its low thickness, high porosity and low mechanical strength, this layer does not protect the metal from corrosion. Anodizing for protective and decorative purposes is the most common method of superficial oxidation processes and is carried out through anodic oxidation. The oxide films, resulted from anodizing, are porous, have a thickness of 20-50μm, and are heat-resistant, stable to water vapour and other corrosion agents. Hard anodizing complies with the same obtains principles as well as decorative and protective anodization. The difference is in that hard anodizing is achieved at low temperatures and high intensity of electric current. In the paper are presented the results of decorative and hard anodization for specimens made from several aluminium alloys in terms of the appearance of the specimens and of the thickness of the anodized.

Purity and surface roughness of vacuum deposited aluminium films

Energy Technology Data Exchange (ETDEWEB)

Dhere, N G; Arsenio, T P [Instituto Militar de Engenharia, Rio de Janeiro (Brazil); Patnaik, B K [Pontificia Universidade Catolica do Rio de Janeiro (Brazil). Instituto de Fisica; Assuncao, F C.R.; de Souza, A M [Pontificia Universidade Catolica do Rio de Janeiro (Brazil). Departamento de Ciencia dos Materiais e Metalurgia

1975-04-01

The authors studied the purity, surface roughness and grain size of vacuum-deposited aluminium films, using an intermetallic crucible and a continuous feed of pure aluminium wire. The grain size and roughness were studied by electron difraction, X-ray diffraction and the scanning electron microscope. Purity was determined by X-ray fluorescence produced by proton bombardment in the Van de Graaff accelerator and by X-ray and optical emission spectrometry.

Different Approach to the Aluminium Oxide Topography Characterisation

International Nuclear Information System (INIS)

Poljacek, Sanja Mahovic; Gojo, Miroslav; Raos, Pero; Stoic, Antun

2007-01-01

Different surface topographic techniques are being widely used for quantitative measurements of typical industrial aluminium oxide surfaces. In this research, specific surface of aluminium oxide layer on the offset printing plate has been investigated by using measuring methods which have previously not been used for characterisation of such surfaces. By using two contact instruments and non-contact laser profilometer (LPM) 2D and 3D roughness parameters have been defined. SEM micrographs of the samples were made. Results have shown that aluminium oxide surfaces with the same average roughness value (Ra) and mean roughness depth (Rz) typically used in the printing plate surface characterisation, have dramatically different surface topographies. According to the type of instrument specific roughness parameters should be used for defining the printing plate surfaces. New surface roughness parameters were defined in order to insure detailed characterisation of the printing plates in graphic reproduction process

On the anodic aluminium oxide refractive index of nanoporous templates

International Nuclear Information System (INIS)

Hierro-Rodriguez, A; Rocha-Rodrigues, P; Araujo, J P; Valdés-Bango, F; Alameda, J M; Teixeira, J M; Jorge, P A S; Santos, J L; Guerreiro, A

2015-01-01

In the present study, we have determined the intrinsic refractive index of anodic aluminium oxide, which is originated by the formation of nanoporous alumina templates. Different templates have been fabricated by the conventional two-step anodization procedure in oxalic acid. Their porosities were modified by chemical wet etching allowing the tuning of their effective refractive indexes (air-filled nanopores  +  anodic aluminium oxide). By standard spectroscopic light transmission measurements, the effective refractive index for each different template was extracted in the VIS–NIR region. The determination of the intrinsic anodic aluminium oxide refractive index was performed by using the Maxwell–Garnett homogenization theory. The results are coincident for all the fabricated samples. The obtained refractive index (∼1.55) is quite lower (∼22%) than the commonly used Al 2 O 3 handbook value (∼1.75), showing that the amorphous nature of the anodic oxide structure strongly conditions its optical properties. This difference is critical for the correct design and modeling of optical plasmonic metamaterials based on anodic aluminium oxide nanoporous templates. (paper)

Freezing of aluminium oxide and iron flowing upward in circular quartz glass tubes

International Nuclear Information System (INIS)

Kuhn, D.; Moeschke, M.; Werle, H.

1983-10-01

The freezing of aluminium oxide and iron flowing upward in circular quartz glass tubes has been studied in a series of experiments. Several tubes were used in the same test. This demonstrated a good reproducibility and allowed systematic parameter variations, especially of the channel diameter. The time-dependance of the penetration was observed with a film camera and these date provide a good basis for a detailed check of sophisticated models which are in development. (orig.) [de

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

Science.gov (United States)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

2012-11-01

The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Growth and morphology of aluminium contacts on P3HT films

Energy Technology Data Exchange (ETDEWEB)

Kaune, Gunar [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Martin-Luther-Universitaet Halle-Wittenberg, Institut fuer Physik, Fachgruppe Photovoltaik, Von-Danckelmann-Platz 3, 06120 Halle (Germany); Meier, Robert; Metwalli, Ezzeldin; Koerstgens, Volker; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department, Lehrstuhl fuer Funktionelle Materialien, James-Franck-Strasse 1, 85747 Garching (Germany); Schlage, Kai; Couet, Sebastien; Roth, Stephan V. [HASYLAB, DESY, Notkestrasse 85, 22603 Hamburg (Germany)

2011-07-01

The characteristics of organic electronic devices are strongly influenced by the type and structure of the metal electrodes needed to inject or extract charge carriers. Therefore understanding of the metal growth process and its relation to the interactions at the metal-organic interface are necessary. We investigate the growth of an aluminium layer on the surface of a P3HT thin film by in-situ application of grazing incidence small-angle X-ray scattering (GISAXS). By subsequent modelling of the scattering data the structural parameters of the growing film are extracted and a growth process is found, which proceeds two-dimensional by stacking single atomic layers on top each other. This process results in a homogeneous film with a large contact area to the polymer and is explained by a strong chemical interaction between aluminium and P3HT, which suppresses clustering of the metal on the polymer surface. The diffusion of single aluminium atoms into the P3HT and the formation of an intermixing layer is revealed by X-ray reflectivity measurements.

Measurement of oxide-layer thickness of internal granules in high-purity aluminium

International Nuclear Information System (INIS)

Takacs, S.; Ditroi, F.; Mahunka, I.

1989-01-01

Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

Development and characterization of ultra-thin dosemeters of aluminium oxide; Desarrollo y caracterizacion de dosimetros ultra-delgados de oxido de aluminio

Energy Technology Data Exchange (ETDEWEB)

Villagran V, E

2003-07-01

The aim of the present thesis work has been to investigate the thermoluminescent (Tl) response of aluminium oxide thin films with thicknesses of the order of 300 nm prepared by laser ablation. Aluminium oxide thin films show Tl response after they are subject to ultraviolet, beta and gamma radiation. The Tl curves exhibit peaks around 75 C and 169 C for UV radiation, 112 C and 180 C for beta particles and 110 C and 176 C for gamma radiation. In order to improve the Tl response some growth parameters such as power density and distance target-substrate were varied. The relation dose-response shows a non-linear behavior for UV irradiation; a linear behavior for beta-particles dose from 150 mGy to 50 Gy, and a linear behavior for gamma radiation dose from 5 Gy to 100 Gy. The kinetic Tl parameters were determined by Computerized Glow Curve Deconvolution (CGCD) method as well as using analytical methods. The CGCD results show that the high temperature peak is composed by four peaks with maximums in 165.7, 188.1, 215.3, 246.5 C. These obey a second order kinetics. The trap depth (E) values are 1.4, 1.6, 1.8 and 2.0 eV respectively. The different analytical results show a trap depth values of 0.914, 0.82 and 0.656 eV respectively. Oxide aluminium thin films obtained would be a suitable tool owing to their potential applications in clinical dosimetry, in the dose distributions due to weekly penetrating radiation determination, and in interfaces dosimetry. (Author)

Low temperature oxidation of niobium alloy with silicon-aluminium coating

International Nuclear Information System (INIS)

Lazarev, Eh.M.; Sapozhnikova, L.V.; Shabanova, M.E.; Pod'yachev, V.N.; Kornilova, Z.I.

1987-01-01

Using the gravimetry methods heat resistance of niobium-titanium-aluminium alloy in the air and at 700 deg C in the initial state and when it is protected by silicide-aluminium coatings (with variable content of aluminium) is investigated. Using X-ray diffraction and micro X-ray diffraction analyses, mechanisms of the alloy oxidation and the coating protective effect are studied. The role of aluminium in the formation of coatings is analyzed and according to bend tests the plasticity of the coatings is evaluated

Dielectric breakdown and healing of anodic oxide films on aluminium under single pulse anodizing

International Nuclear Information System (INIS)

Sah, Santosh Prasad; Tatsuno, Yasuhiro; Aoki, Yoshitaka; Habazaki, Hiroki

2011-01-01

Research highlights: → We examined dielectric breakdown of anodic alumina by single pulse anodizing. → Current transients and morphology of discharge channels are dependent upon electrolyte and voltage. → There is a good correlation between current transient and morphology of discharge channel. → Healing of open discharge pores occurs in alkaline silicate, but not in pentaborate electrolyte. - Abstract: Single pulse anodizing of aluminium micro-electrode has been employed to study the behaviour of dielectric breakdown and subsequent oxide formation on aluminium in alkaline silicate and pentaborate electrolytes. Current transients during applying pulse voltage have been measured, and surface has been observed by scanning electron microscopy. Two types of current transients are observed, depending on the electrolyte and applied voltage. There is a good correlation between the current transient behaviour and the shape of discharge channels. In alkaline silicate electrolyte, circular open pores are healed by increasing the pulse width, but such healing is not obvious in pentaborate electrolyte.

Plasma metallization of aluminium oxide powder

International Nuclear Information System (INIS)

Smirnov, A.I.; Petrunichev, V.A.

1981-01-01

The sintering ability of cermets of metallized granulas of aluminium and matrix materials, such as chromium, nickel and nichrome is studied. Deformation tests of samples of cermets with molybdenum coated granules show satisfactory results at normal and high temperatures without fracture of metall-oxide interfaces [ru

Parameters of nanodimensional aluminium films deposited by the laser method in vacuum

International Nuclear Information System (INIS)

Gusakov, G.A.; Ismailov, D.R.; Puzyrev, M.V.

2011-01-01

The investigation of the thickness and structure of a aluminium films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

Effects of aluminium oxide nanoparticles on bacterial growth

Directory of Open Access Journals (Sweden)

Doskocz Nina

2017-01-01

Full Text Available Production and wide application of nanomaterials have led to nanotechnology development but their release to environment and the induction of toxic reactions, affects the natural microbial communities. Therefore, studies on the impact of nanoparticles on microorganisms and environment are required and needed. The aim of this study was to assess the impact of aluminium oxide nanoparticles on the growth of Pseudomonas putida. To compare the harmfulness of different forms of aluminium oxide, the ecotoxicity of its macro-forms was also evaluated in the study. Research showed that the exposure to nanoparticles can negatively influence microorganisms. The EC50-16h determined in this study was 0.5 mg/l, and NOEC equaled 0.19 mg/l. Nano-Al2O3 proved to be more toxic to P. putida than aluminium oxide. This indicates that the nano-form of a given substance demonstrates different properties and may constitute a far greater danger for the environment than the same substance in the large form. According to EU and US EPA criteria, nano-Al2O3 proved to be very toxic and highly toxic, respectively. Changes in bacterial communities caused by nanoparticles may affect the normal biological, chemical and nutrient cycle in the ecosystem and the effect triggered by nanomaterials in relation to other organisms is unpredictable.

Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part II corrosion performance

DEFF Research Database (Denmark)

Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

2015-01-01

the protection provided by steam treatment with HNO3was a function of the concentration of NO3−ions. The coating generated by inclusion of KMnO4showed highest resistance to filiform corrosion. Overall, the performance of the steam treated surfaces under filiform corrosion and AASS test was a result of the local......Surface treatment of aluminium alloys using steam with oxidative chemistries, namely KMnO4 and HNO3 resulted in accelerated growth of oxide on aluminium alloys. Detailed investigation of the corrosion performance of the treated surfaces was carried out using potentiodynamic polarisation...

Band gap determination of thin praseodymium oxide layers on aluminium oxynitride films

Energy Technology Data Exchange (ETDEWEB)

Bergholz, Matthias; Schmeisser, Dieter [Brandenburgische Technische Universitaet, Cottbus (Germany). Angewandte Physik - Sensorik

2008-07-01

High-k dielectrics are important as never before in semiconductor industry. We investigate Pr{sub 2}O{sub 3} as one representative of this group on silicon and silicon-aluminium oxynitride substrates. In earlier work we observed the positive influence of this AlO{sub x}N{sub y} intermediate layer on the electrical properties of the Pr{sub 2}O{sub 3} layer. Now we present in-situ EELS, XPS and UPS measurements of gradually grown thin Pr{sub 2}O{sub 3} on AlO{sub x}N{sub y}. From these measurements we determine the band structure and find a very fast change of the band gap for the first few A, coupled with n-type behaviour for the Pr{sub 2}O{sub 3} film. These results are compared with RIXS measurements of a 5 nm Pr{sub 2}O{sub 3} on a 1 nm thick AlO{sub x}N{sub y} layer.

Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

International Nuclear Information System (INIS)

Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

2012-01-01

Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

International Nuclear Information System (INIS)

Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

1994-01-01

Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

Characterization of a glass frit free TiCuAg-thick film metallization applied on aluminium nitride

International Nuclear Information System (INIS)

Reicher, R.; Smetana, W.; Adlassnig, A.; Schuster, J. C.; Gruber, U.

1997-01-01

The metallization of aluminium nitride substrates by glass frit free Ti CuAg-thick film pastes were investigated. Adhesion properties of the conductor paste were tested by measuring tensile strength and compared with commercial Cu-thick film pastes (within glass frit). Also numerical analysis of temperature-distribution and thermal extension of metallized aluminium nitride ceramic, induced by a continuous and a pulsed working electronic device were made with a finite element program. (author)

The interfacial chemistry of metallized, oxide coated, and nanocomposite coated polymer films

Energy Technology Data Exchange (ETDEWEB)

Barker, C.P. [Durham Univ. (United Kingdom). Dept. of Chemistry; Kochem, K.H. [HOECHST Aktiengesellschaft, Werk Kalle/Albert, Geschaftsbereich H, Rheingaustrasse 190-196, D-65174 Wiesbaden (Germany); Revell, K.M. [CAMVAC (Europe) Ltd., Burrell Way, Thetford, Norfolk IP24 3QY (United Kingdom); Kelly, R.S.A. [CAMVAC (Europe) Ltd., Burrell Way, Thetford, Norfolk IP24 3QY (United Kingdom); Badyal, J.P.S. [Durham Univ. (United Kingdom). Dept. of Chemistry

1995-02-15

Aluminium, aluminium oxide, and aluminium/aluminium oxide nanocomposite coated polymer substrates have been characterized by X-ray photoelectron spectroscopy, transmission electron microscopy, argon ion sputter depth profiling, and gas permeation measurements. A comparison of the similarities and differences between these coatings has provided a detailed insight into the physicochemical origins of gas barrier associated with metallized plastics. Keywords: Aluminium; Aluminium oxide; Coatings; X-ray photoelectron spectroscopy ((orig.))

Excitation of anodized alumina films with a light source

DEFF Research Database (Denmark)

Aggerbeck, Martin; Canulescu, Stela; Rechendorff, K.

Optical properties of anodized aluminium alloys were determined by optical diffuse reflectance spectroscopy of such films. Samples with different concentrations of dopants were excited with a white-light source combined with an integrating sphere for fast determination of diffuse reflectance....... The UV-VIS reflectance of Ti-doped anodized aluminium films was measured over the wavelength range of 200 nm to 900 nm. Titanium doped-anodized aluminium films with 5-15 wt% Ti were characterized. Changes in the diffuse light scattering of doped anodized aluminium films, and thus optical appearance......, with doping are discussed. Using the Kubelka-Munk model on the diffuse reflectance spectra of such films, the bandgap Eg of the oxide alloys can be determined....

Dry And Ringer Solution Lubricated Tribology Of Thin Osseoconductive Metal Oxides And Diamond-Like Carbon Films

Directory of Open Access Journals (Sweden)

Waldhauser W.

2015-09-01

Full Text Available Achieving fast and strong adhesion to jawbone is essential for dental implants. Thin deposited films may improve osseointegration, but they are prone to cohesive and adhesive fracture due to high stresses while screwing the implant into the bone, leading to bared, less osteoconductive substrate surfaces and nano- and micro-particles in the bone. Aim of this work is the investigation of the cohesion and adhesion failure stresses of osteoconductive tantalum, titanium, silicon, zirconium and aluminium oxide and diamond-like carbon films. The tribological behaviour under dry and lubricated conditions (Ringer solution reveals best results for diamond-like carbon, while cohesion and adhesion of zirconium oxide films is highest.

Layered double hydroxide films on nanoporous anodic aluminum oxide/aluminum wire: a new fiber for rapid analysis of Origanum vulgare essential oils.

Science.gov (United States)

Piryaei, Marzieh

2018-01-01

Zn/Al layered double hydroxide (LDH) films were fabricated in situ with anodic aluminium oxide aluminium as both the substrate and the sole aluminium source by means of urea hydrolysis. Headspace solid phase microextraction using LDH fibre in combination with capillary GC-MS was utilised as a monitoring technique for the collection and detection of the volatile compounds of Origanum vulgare. Experimental parameters, including the sample weight, microwave power, extraction time and humidity effect, were examined and optimised.

Aluminium production

International Nuclear Information System (INIS)

Winter, B.; Ayers, J.; Sammer, G.

2001-01-01

Aluminium is the most important non-ferrous metal by quantity. Aluminium is produced by electrolysis of aluminium oxide (also known as alumina). Alumina is produced by refining bauxite. The quantity of primary and secondary aluminium production in ECE-countries between 1992 and 1998 is shown. The European aluminium industry employs approximately 200 000 employees. The annual aluminium production in the European Union was 3.58 million tonnes in 1994, of which 44 % was secondary aluminium. In 1996 3.96 million tonnes of aluminium were produced in the EU, of which 44 % was secondary aluminium. (author)

Hydrogenation properties of pure magnesium and magnesium-aluminium thin films

Energy Technology Data Exchange (ETDEWEB)

Domenech-Ferrer, Roger; Gurusamy Sridharan, Madana; Garcia, Gemma; Pi, Francesc; Rodriguez-Viejo, Javier [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain)

2007-06-10

We have studied the hydrogenation/dehydrogenation behaviour of multilayered stacks of Pd/Mg/Pd and Pd-Fe(Ti)-Mg-Al-Mg-Fe(Ti)-Pd grown by electron beam physical vapour deposition. The palladium coating was deposited at both sides of the structure to ensure a fast dissociation rate and good transport properties for hydrogen as well as to avoid oxidation of magnesium either from atmosphere as from the substrate surface. Fe and Ti layers were included in the stack composition in order to assess their possible catalyst effect as well as to prevent the formation of Mg{sub x}Pd{sub y} intermetallics during the thermal treatments. We have studied the structure evolution after thermal treatments as well as after the hydrogenation and dehydrogenation processes using XRD. We have also followed the reactions kinetics by resistometry and differential scanning calorimetry. The nanostructured Mg films have been hydrogenated at temperature as low as 50 C in few minutes. Adding aluminium to magnesium has improved its hydrogenation capacity. We have also observed that the formation of an Mg{sub x}Al{sub y} intermetallic before hydrogenation improves the storage capacity. We have confirmed that titanium is a better catalyst for the hydrogenation/dehydrogenation of the Mg films. (author)

EBSD analysis of polysilicon films formed by aluminium induced crystallization of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Auger, J.M. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); SMS Centre, UMR CNRS 5146, Ecole des Mines de Saint Etienne, 158 Cours Fauriel, 42023 Saint Etienne Cedex 2 (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A.; Montgomery, P.C. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Maurice, C. [SMS Centre, UMR CNRS 5146, Ecole des Mines de Saint Etienne, 158 Cours Fauriel, 42023 Saint Etienne Cedex 2 (France); Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2008-08-30

Among the methods for enlarging the grain size of polycrystalline silicon (poly-Si) thin films, aluminium induced crystallization (AIC) of amorphous silicon is considered to be a very promising approach. In the AIC process, a thin a-Si layer on top of an aluminium layer crystallizes at temperatures well below the eutectic temperature of the Al/Si system (T{sub eu} = 577 deg. C). By means of electron backscattering diffraction (EBSD), we have mainly studied the effect of the aluminium layer quality varying the deposition system on the grain size, the defects and the preferential crystallographic orientation. We have found a strong correlation between the mean grain size and the size distribution with the Al deposition system and the surface quality. Furthermore, we show for the first time that more than 50% of the surface of the AIC films grown on alumina substrates are (103) preferentially oriented, instead of the commonly observed (100) preferential orientation. This may have important consequences for epitaxial thickening of the AIC layer into polysilicon absorber layers for solar cells.

Oxidation of {phi}'-aluminium oxynitride

Energy Technology Data Exchange (ETDEWEB)

Xolin, E. [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20, av Albert Einstein, F-69621 Villeurbanne cedex (France); Jorand, Y., E-mail: Yves.Jorand@insa-lyon.f [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20, av Albert Einstein, F-69621 Villeurbanne cedex (France); Olagnon, C.; Gremillard, L. [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20, av Albert Einstein, F-69621 Villeurbanne cedex (France)

2011-03-15

Research highlights: Oxidation of {phi}'-AlON has been studied for the first time. First corrosion products are {gamma}-alumina. Low density {alpha}-alumina is formed at high temperature. Grains are extensively cracked after oxidation. The low density of the {alpha}-alumina is due to a network of nanometric porosities. - Abstract: The oxidation in air of single crystal {phi}'-aluminium oxynitride (AlON) grains has been characterized by thermogravimetry and X-ray diffraction in the 1273-1673 K range. Two oxidation stages have been observed, suggesting the formation of a transitional phase. Below 1473 K, oxidation results in the apparition of platelets and noodle-like crystals on the surface of the initially faceted single crystals. Above 1473 K, low density {alpha}-alumina polycrystals start forming on the grain surface and grow towards the grain core with increasing temperature or time. Their low density is mainly due to the presence of a network of nano-porosities.

Time and temperature reduction of the sealing process of porous aluminium oxide films with organic additives

International Nuclear Information System (INIS)

Bautista, A.; Lopez, V.; Otero, E.; Lizarbe, R.; Gonzalez, J.A.

1998-01-01

Different sealing processes of anode coating in aluminium oxide have been industrially used for more than 30 years. In two of the preceding decades a great effort was realized to reduce costs in the traditional hydrothermal sealing in deionized boiling water (SHT), a very expensive process due to its endurance and high temperature on which it develops. New sealing procedures are proposed, on which by means of the use of organic additives, the time or the temperature of the SHT is essentially reduced. (Author) 10 refs

The speciation of Si and other alloying elements in the oxide surface film of galvanically corroded weld fusion zone of laser welded AA6061 aluminium alloy

Energy Technology Data Exchange (ETDEWEB)

Mujibur Rahman, A.B.M.; Kumar, Sunil [Ian Wark Research Institute, University of South Australia, Mawson Lakes Campus, Mawson Lakes, South Australia 5095 (Australia); Gerson, Andrea R. [Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes Campus, Mawson Lakes, South Australia 5095 (Australia)], E-mail: Andrea.Gerson@unisa.edu.au

2008-05-15

It has recently been proposed that on galvanic corrosion of laser weldments of AA6061 aluminium alloy the temporal increase in galvanic corrosion resulted from either the build up of intermetallic phases in the surface oxide layer and/or a significant increase in the surface area of the cathodic weld fusion zone due to the porous nature of the surface layer. This proposition has motivated a comprehensive surface analytical study of the incorporation of alloying elements into the oxide surface film, which is composed predominately of alumina. Si is found to be present as silicate and silicides. The Gibbs free energy of formation, per cation, of silicate is more negative than that for alumina and hence silicate formation is thermodynamically, relatively, favourable. In contrast the Gibbs free energy for oxide formation, per cation, for the other alloying elements is less negative and hence relatively unfavourable compared to the formation of alumina. We propose therefore that Fe, Cu and Cr are present in the metallic form, possibly as silicides, within the oxide surface layer. Magnesium is found to be depleted relative to the weld fusion zone presumably due to dissolution within the electrolyte.

The speciation of Si and other alloying elements in the oxide surface film of galvanically corroded weld fusion zone of laser welded AA6061 aluminium alloy

International Nuclear Information System (INIS)

Mujibur Rahman, A.B.M.; Kumar, Sunil; Gerson, Andrea R.

2008-01-01

It has recently been proposed that on galvanic corrosion of laser weldments of AA6061 aluminium alloy the temporal increase in galvanic corrosion resulted from either the build up of intermetallic phases in the surface oxide layer and/or a significant increase in the surface area of the cathodic weld fusion zone due to the porous nature of the surface layer. This proposition has motivated a comprehensive surface analytical study of the incorporation of alloying elements into the oxide surface film, which is composed predominately of alumina. Si is found to be present as silicate and silicides. The Gibbs free energy of formation, per cation, of silicate is more negative than that for alumina and hence silicate formation is thermodynamically, relatively, favourable. In contrast the Gibbs free energy for oxide formation, per cation, for the other alloying elements is less negative and hence relatively unfavourable compared to the formation of alumina. We propose therefore that Fe, Cu and Cr are present in the metallic form, possibly as silicides, within the oxide surface layer. Magnesium is found to be depleted relative to the weld fusion zone presumably due to dissolution within the electrolyte

Effects of iron-aluminium oxides and organic carbon on aggregate stability of bauxite residues.

Science.gov (United States)

Zhu, Feng; Li, Yubing; Xue, Shengguo; Hartley, William; Wu, Hao

2016-05-01

In order to successfully establish vegetation on bauxite residue, properties such as aggregate structure and stability require improvement. Spontaneous plant colonization on the deposits in Central China over the last 20 years has revealed that natural processes may improve the physical condition of bauxite residues. Samples from three different stacking ages were selected to determine aggregate formation and stability and its relationship with iron-aluminium oxides and organic carbon. The residue aggregate particles became coarser in both dry and wet sieving processes. The mean weight diameter (MWD) and geometry mean diameter (GMD) increased significantly, and the proportion of aggregate destruction (PAD) decreased. Natural stacking processes could increase aggregate stability and erosion resistant of bauxite residues. Free iron oxides and amorphous aluminium oxides were the major forms in bauxite residues, but there was no significant correlation between the iron-aluminium oxides and aggregate stability. Aromatic-C, alkanes-C, aliphatic-C and alkenes-C were the major functional groups present in the residues. With increasing stacking age, total organic carbon content and aggregate-associated organic carbon both increased. Alkanes-C, aliphatic-C and alkenes-C increased and were mainly distributed in macro-aggregates, whereas aromatic-C was mainly distributed in aluminium oxides maybe more important for stability of micro-aggregates.

Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

International Nuclear Information System (INIS)

Tiwari, Ruchi; Chandra, Sudhir

2013-01-01

In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

Oxide film defects in Al alloys and the formation of hydrogen- related porosity

International Nuclear Information System (INIS)

Griffiths, W D; Yue, Y; Gerrard, A J

2016-01-01

Double oxide film defects have also been held responsible for the origins of hydrogen porosity, where hydrogen dissolved in the Al melt passes into the interior atmosphere of the double oxide film defect causing it to inflate. However, this is in opposition to long- established evidence that H cannot readily diffuse through aluminium oxide. To investigate this further, samples of commercial purity Al were first degassed to remove their initial H content, and then heated to above their melting point and held in atmospheres of air and nitrogen respectively, to determine any differences in H pick-up. The experiment showed that samples held in an oxidising atmosphere, and having an oxide skin, picked up significantly less H than when the samples were held in a nitrogen atmosphere, which resulted in the formation of AlN in cracks in the oxide skin of the sample. It is suggested that double oxide film defects can give rise to hydrogen-related porosity, but this occurs more quickly when the oxygen in the original oxide film defect has been consumed by reaction with the surrounding melt and nitrogen reacts to form AlN, which is more permeable to H than alumina, more easily allowing the oxide film defect to give rise to a hydrogen pore. This is used to interpret results from an earlier synchrotron experiment, in which a small pore was seen to grow into a larger pore, while an adjacent large pore remained at a constant size. (paper)

Microstructure and properties of aluminium-aluminium oxide graded composite materials

Science.gov (United States)

Kamaruzaman, F. F.; Nuruzzaman, D. M.; Ismail, N. M.; Hamedon, Z.; Iqbal, A. K. M. A.; Azhari, A.

2018-03-01

In this research works, four-layered aluminium-aluminium oxide (Al-Al2O3) graded composite materials were fabricated using powder metallurgy (PM) method. In processing, metal-ceramic graded composite materials of 0%, 10%, 20% and 30% weight percentage of ceramic concentration were prepared under 30 ton compaction load using a cylindrical die-punch set made of steel. After that, two-step pressureless sintering was carried out at sintering temperature and time 600°C and 3 hours respectively. It was observed that the sintered cylindrical specimens of 30 mm diameter were prepared successfully. The graded composite specimens were analysed and the properties such as density, microstructure and hardness were measured. It was found that after sintering process, the diameter of the graded cylindrical structure was decreased. Using both Archimedes method and rule of mixture (ROM), he density of structure was measured. The obtained results revealed that the microvickers hardness was increased as the ceramic component increases in the graded layer. Moreover, it was observed that the interface of the graded structure is clearly distinguished within the multilayer stack and the ceramic particles are almost uniformly distributed in the Al matrix.

Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part I Microstructural investigation

DEFF Research Database (Denmark)

Din, Rameez Ud; Piotrowska, Kamila; Gudla, Visweswara Chakravarthy

2015-01-01

The surface treatment of aluminium alloys under steam containing KMnO4 and HNO3resulted in the formation of an oxide layer having a thickness of up to 825 nm. The use of KMnO4 and HNO3 in the steam resulted in incorporation of the respective chemical species into the oxide layer. Steam treatment ...

Production and characterization of aluminium oxide nanoshells on spray dried lactose.

Science.gov (United States)

Hellrup, Joel; Rooth, Mårten; Johansson, Anders; Mahlin, Denny

2017-08-30

Atomic layer deposition (ALD) enables deposition of dense nanometer thick metal oxide nanoshells on powder particles with precise thickness control. This leads to products with low weight fraction coating, also when depositing on nano- or micron sized powder particles. This study aimed at investigating the aluminium oxide nanoshell thickness required to prevent moisture sorption. The nanoshells were produced with ALD on spray-dried lactose, which is amorphous and extremely hygroscopic. The particles were studied with dynamic vapor sorption between 0 and 50% RH, light scattering, scanning electron microscopy, X-ray diffraction, differential scanning calorimetry, and polarized light microscopy. The ALD did not induce any recrystallization of the amorphous lactose. The dynamic vapor sorption indicated that the moisture sorption was almost completely inhibited by the nanoshell. Neat amorphous lactose rapidly recrystallized upon moisture exposure. However, only ca. 15% of the amorphous lactose particles recrystallized of a sample with 9% (by weight) aluminium oxide nanoshell at storage for six months upon 75% RH/40°C, which indicate that the moisture sorption was completely inhibited in the majority of the particles. In conclusion, the aluminium oxide nanoshells prevented moisture sorption and dramatically improved the long term physical stability of amorphous lactose. This shows the potential of the ALD-technique to protect drug microparticles. Copyright © 2017 Elsevier B.V. All rights reserved.

Quantification of aluminium-27 NMR spectra of high-surface-area oxides

International Nuclear Information System (INIS)

Pearson, R.M.; Schramm, C.M.

1990-01-01

This paper discusses the quantitation of 27 Al NMR spectra. It is showns that the so called 'invisible' aluminium atoms seen by recent workers are completely consistent with known continuous wave NMR studies of the 27 Al NMR spectra of high surface area aluminium oxides. The use of pulsed NMR techniques further complicate the quantitative measurement of 27 Al NMR spectra, especially when high resolution NMR spectrometers are used for this purpose. Methods are described which allow both the estimation of aluminium not seen by continuous wave techniques and the amounts of the NMR spectra lost in pulsed work. (author). 24 refs.; 6 figs.; 1 tab

Surface oxide formation during corona discharge treatment of AA 1050 aluminium surfaces

DEFF Research Database (Denmark)

Minzari, Daniel; Møller, Per; Kingshott, Peter

2008-01-01

process modifies aluminium AA 1050 surface, the oxide growth and resulting corrosion properties. The corona treatment is carried out in atmospheric air. Treated surfaces are characterized using XPS, SEM/EDS, and FIB-FESEM and results suggest that an oxide layer is grown, consisting of mixture of oxide...

Disruption of an Alumina Layer During Sintering of Aluminium in Nitrogen

Directory of Open Access Journals (Sweden)

Pieczonka T.

2017-06-01

Full Text Available Aluminium oxide layer on aluminium particles cannot be avoided. However, to make the metal-metal contacts possible, this sintering barrier has to be overcome in some way, necessarily to form sintering necks and their development. It is postulated that the disruption of alumina layer under sintering conditions may originate physically and chemically. Additionally, to sinter successfully non alloyed aluminium powder in nitrogen, the operation of both types mechanism is required. It is to be noted that metallic aluminium surface has to be available to initiate reactions between aluminium and the sintering atmosphere, i.e. mechanical disruption of alumina film precedes the chemical reactions, and only then chemically induced mechanisms may develop. Dilatometry, gravimetric and differential thermal analyses, and microstructure investigations were used to study the sintering response of aluminium at 620°C in nitrogen, which is the only sintering atmosphere producing shrinkage.

Oxidation and waste-to-energy output of aluminium waste packaging during incineration: A laboratory study.

Science.gov (United States)

López, Félix A; Román, Carlos Pérez; García-Díaz, Irene; Alguacil, Francisco J

2015-09-01

This work reports the oxidation behaviour and waste-to-energy output of different semi-rigid and flexible aluminium packagings when incinerated at 850°C in an air atmosphere enriched with 6% oxygen, in the laboratory setting. The physical properties of the different packagings were determined, including their metallic aluminium contents. The ash contents of their combustion products were determined according to standard BS ISO 1171:2010. The net calorific value, the required energy, and the calorific gain associated with each packaging type were determined following standard BS EN 13431:2004. Packagings with an aluminium lamina thickness of >50μm did not fully oxidise. During incineration, the weight-for-weight waste-to-energy output of the packagings with thick aluminium lamina was lower than that of packagings with thin lamina. The calorific gain depended on the degree of oxidation of the metallic aluminium, but was greater than zero for all the packagings studied. Waste aluminium may therefore be said to act as an energy source in municipal solid waste incineration systems. Copyright © 2015 Elsevier Ltd. All rights reserved.

Study of aluminium oxide from high-alumina refractory ceramics by ...

Indian Academy of Sciences (India)

Wintec

Keywords. Ceramics; aluminium oxide; X-ray diffraction; scanning electron microscopy; thermolumi- nescence. ... and ruby, consists of a slightly distorted hexagonal O. 2– .... a very complex structure consisting of a broad distribu- .... Imax (a.u.).

Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

Energy Technology Data Exchange (ETDEWEB)

Calnan, Sonya [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Riedel, Wiebke; Gledhill, Sophie [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Stannowski, Bernd [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Schlatmann, Rutger [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich 1 Ingenieurwissenschaften I, University of Applied Science (HTW) Berlin, Wilhelminenhofstraße 75 A, 12459 Berlin (Germany)

2015-11-02

The effect of varying the boron and aluminium content of the starting electrolyte for extrinsically doped ZnO films grown on SnO{sub 2}:F substrates by electrochemical deposition was investigated. The ZnO:B film surface was characterized by grains with mainly hexagonal faces exposed while the exposed faces of the ZnO:Al grains were rectangular. Whereas a B{sup 3+}/Zn{sup 2+} ratio of up to 10 at.% in the electrolyte had no significant effect on the crystalline structure of the ZnO films, an Al{sup 3+}/Zn{sup 2+} ratio above 0.25 at.% increased the disorder in the crystalline structure. All the boron doped films exhibit a strong E{sub 2}-high Raman mode related to wurtzite ZnO structure but this peak was much weaker for ZnO:Al and diminished with increasing Al incorporation in the films. Exposing the films to ultra-violet light reduced their effective sheet resistance from values beyond measurement range to values between 40 and 5000 kΩ/sq for film thicknesses of 200–550 nm. Inspection of the optical spectra near the bandgap edge and the plasma edge in the mid infrared range, showed that the Al-doping resulted in a higher carrier concentration ~ 10{sup 20} cm{sup −3} than B-doping. X-ray electron spectroscopy showed that the dopant efficiency was limited by the absence of dopant atoms near the surface of all the ZnO:B films and of the lightly doped ZnO:Al and, by the formation of aluminium oxide at the surface of the more highly doped ZnO:Al films. - Highlights: • Crystalline ZnO grown by electrochemical deposition. • Comparison of influence of H{sub 3}BO{sub 3} and Al(NO{sub 3}){sub 3} as dopant sources. • Different ZnO crystalline orientation for Al and boron doping. • Film surface chemical composition suppressed electrical conductivity.

Columnar structure of reactively sputtered aluminium nitride films

International Nuclear Information System (INIS)

Chen Chisan; Hwang Binghwai; Lu Hongyang; Hsu Tzuchien

2002-01-01

Columnar structure of thin aluminium nitride (AlN) films is examined by x-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The films were deposited on SiO 2 /Si(100) substrate using radiofrequency reactive sputtering method. Strong [0001] preferred orientation is observed by XRD and confirmed by selected area diffraction pattern of TEM. Columnar grains of ∼50-100 nm inclined at an angle of ∼10 deg. to the substrate normal are observed by SEM. As revealed by TEM, each columnar grain is composed of nano-grains of the order of 10 nm and no faceting is observed in the nano-grains and columns. The [0001] preferred orientation results as columnar grains are oriented at various azimuthal angles with their c-axes perpendicular to the substrate surface. A slight tilt of a few tenths of a degree between adjacent nano-grains within a column is also observed. The random azimuthal orientation of columnar grains and small tilt between nano-grains in the films are accommodated by the amorphous phase present in the grain boundaries

Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

International Nuclear Information System (INIS)

Willis, David A; Dreier, Adam L

2009-01-01

A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm -2 . Above the film removal threshold (3.3 J cm -2 ) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

Characterization of steam generated anti-corrosive oxide films on Aluminium alloys

DEFF Research Database (Denmark)

Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

2014-01-01

of hexavalent chromium is strictly regulated due to its toxic nature and suspected carcinogenicity. So, it is highly imperative to develop other alternatives for chrome conversion coatings. Treatment of aluminium with natural water at elevated temperatures results in the formation of different forms...

Improvement of the oxidation resistance of Tribaloy T-800 alloy by the additions of yttrium and aluminium

International Nuclear Information System (INIS)

Zhang, Y.-D.; Zhang, C.; Lan, H.; Hou, P.Y.; Yang, Z.-G.

2011-01-01

Research highlights: → The additions of yttrium (Y) reduced the oxidation rate of Tribaloy T-800 alloy. → Y promoted selective oxidation of Cr due to refinement of alloy phase size. → The oxidation rate was further reduced by Y plus Al with a protective Al 2 O 3 scale. → The positive effect of Y and Al being more pronounced at the higher temperature. - Abstract: The microstructures and oxidation behaviour of the modified Tribaloy T-800 alloys by additions of yttrium and yttrium plus aluminium have been studied. At the presence of yttrium alone, the oxidation rate decreased, and the selective oxidation of chromium was promoted, which was related to the refinement of alloy phase size. The addition of yttrium plus aluminium further reduced the oxidation rate. The selective oxidation of chromium and aluminium were both promoted significantly. The benefits were especially pronounced at 1000 o C, with the formation of protective alumina external layer and no internal oxides, which may be detrimental to the alloy mechanical property.

Experimental investigations on a CRDI system assisted diesel engine fuelled with aluminium oxide nanoparticles blended biodiesel

Directory of Open Access Journals (Sweden)

C. Syed Aalam

2015-09-01

Full Text Available Experiments were conducted to determine engine performance, exhaust emissions and combustion characteristics of a single cylinder, common rail direct injection (CRDI system assisted diesel engine using diesel with 25 percentage of zizipus jujube methyl ester blended fuel (ZJME25. Along with this ZJME25 aluminium oxide nanoparticles were added as additive in mass fractions of 25 ppm (AONP 25 and 50 ppm (AONP 50 with the help of a mechanical Homogenizer and an ultrasonicator. It was observed that aluminium oxide nanoparticles blended fuel exhibits a significant reduction in specific fuel consumption and exhaust emissions at all operating loads. At the full load, the magnitude of HC and smoke emission for the ZJME25 before the addition of aluminium oxide nanoparticles was 13.459 g/kW h and 79 HSU, whereas it was 8.599 g/kW h and 49 HSU for the AONP 50 blended ZJME25 fuel respectively. The results also showed a considerable enhancement in brake thermal efficiency and heat release rate due to the influence of aluminium oxide nanoparticles addition in biodiesel–diesel blend.

The chemical transformation of copper in aluminium oxide during heating

International Nuclear Information System (INIS)

Wei, Y-L; Wang, H-C; Yang, Y-W; Lee, J-F

2004-01-01

Thermal treatment has recently been emerging as a promising environmental technology to stabilize heavy metal-containing industrial sludge. This study used x-ray absorption spectroscopy (XAS) to identify the species of copper contaminant contained in aluminium oxide that is one of the main compositions of sludge and soil. Results indicate that the originally loaded copper nitrate was transformed into Cu(OH) 2 after its dissolution in the aluminium oxide slurry. Extended x-ray absorption fine structure (EXAFS) fitting indicates that the main copper species in the 105 deg. C dried Cu(NO 3 ) 2 -loaded aluminium oxide is Cu(OH) 2 which accounts for ca. 75% of the loaded copper. After thermal treatment at 500 deg. C for 1 h, both x-ray absorption near-edge structure (XANES) and EXAFS fitting results show that CuO became the prevailing copper species (about 85%); the rest of the copper consisted of ∼ 15% Cu(OH) 2 and a negligible amount of Cu(NO 3 ) 2 . It was found that most Cu(OH) 2 and Cu(NO 3 ) 2 decomposed into CuO at 500 deg. C. Further increase of the heating temperature from 500 to 900 deg. C resulted in more decomposition of Cu(OH) 2 and Cu(NO 3 ) 2 ; therefore CuO remained as the main copper species. However, it was suggested that about 15% of the loaded copper formed CuAl 2 O 4 through the chemical reaction between CuO and Al 2 O 3 at 900 deg. C

Electrodeposition of polypyrrole on aluminium in the presence of sodium bis(2-ethylhexyl) sulfosuccinate

International Nuclear Information System (INIS)

Lehr, I.L.; Saidman, S.B.

2006-01-01

Stable and adherent polypyrrole films have been successfully electrodeposited onto aluminium electrode over a wide solution pH interval by using sodium bis(2-ethylhexyl) sulfosuccinate as dopant. The redox behaviour of the deposited coating was studied by cyclic voltammetry in different electrolytes and the corrosion protection properties were examined in chloride solution by polarisation studies and open circuit measurements. The polymer film was characterised by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The obtained results are explained considering the surfactant remains entrapped into the polymer matrix. The coatings inhibit the oxidation of the aluminium substrate even on polarisation to high anodic potentials

Adsorption of lithium ion to amorphous hydrous aluminium oxide

International Nuclear Information System (INIS)

Wada, Hideo; Kitamura, Takao; Fujii, Ayako; Katoh, Shunsaku

1982-01-01

Adsorption process of lithium ion to amorphous hydrous aluminium oxide (a-HAO) was investigated by pH titration method with lithium chloride-lithium hydroxide mixed solution and X-ray diffraction analysis of a-HAO after pH titration. In the pH titration, the addition of hydroxide ion in amount from 0 to 4.0 mmol.g -1 gave no change to the pH of the solution and caused adsorption of lithium ion equivalent in amount to added hydroxide ion. X-ray diffraction analysis showed the formation of lithium hydrogenaluminate LiH (AlO 2 ) 2 .5H 2 O (LHA) in the a-HAO after pH titration. These results showed that adsorption of lithium ion by a-HAO was related to a reaction which consumed hydroxide ion and formed LHA. In order to elucidate detail process of the reaction, changes of pH, aluminium concentration and lithium concentration of the solution, respectively with time, were determined. The pH of the solution decreased in two stages. At the first stage of the pH decrease, the aluminium concentration increased whereas the lithium concentration did not change. At the second stage, the lithium concentration decreased together with the decrease of the aluminium concentration. It was inferred that adsorption of lithium ion proceeded through dissolution of a-HAO and precipitation of LHA. Theoretical adsorption capacity calculated from the above formula for LHA and aluminium content in a-HAO was 4.7 mmol.g -1 and agreed fairly well with observed value 4.0 mmol.g -1 . (author)

The activation of aluminium by mercury ions in non-aggressive media

Energy Technology Data Exchange (ETDEWEB)

Bessone, J.B. [INIEC-Dto de Ingenieria Quimica, Universidad Nacional del Sur, Av. Alem 1253, 8000 Bahia Blanca (Argentina)]. E-mail: jbessone@criba.edu.ar

2006-12-15

The presence of Hg at concentration less than 300 ppm in Al base alloys causes their passivation breakdown. On alloys used as sacrificial anodes, it causes a major lowering (>0.3 V) in their operational potential in chloride media. Mercury as trace constituent in the natural gas stream causes severe damage to cryogenic heat exchangers. The present paper presents evidences of the mechanism by which mercury produces its pronounced effect in aqueous non-aggressive media. The work was carried out using pure (99.99%) aluminium and mercury (II) acetate solutions of different concentrations and pH. Open circuit potential-time responses were obtained. The surface effects were followed by means of scanning microscopy and EDAX/X-Ray analysis. The results demonstrate that immediately after immersion, the initial air-formed oxide film underwent a dynamic crack-healing process at flaws in the film, possible associated to grain boundaries. The subsequent healing process, if any, depends on the media composition. Thus, in this special case, Hg{sup 2+} ions can be directly reduced on the bare aluminium, reaching a true metallic contact, and initiating surface diffusion. This enables the formation of an amalgam. Aluminium atoms diffuse through the liquid mercury and undergo oxidation at the amalgam/electrolyte interface. This process is responsible for the oxide detachment (by undermining) and the attack morphology (i.e., wide cavities). The presence of aggressive anions is not needed to initiate activation.

Influence of metallic surface states on electron affinity of epitaxial AlN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2017-06-15

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Aerogel nanoscale aluminium oxides as a destructive sorbent for mustard gas

Czech Academy of Sciences Publication Activity Database

Štengl, Václav; Bakardjieva, Snejana; Maříková, Monika; Šubrt, Jan; Oplustil, F.; Olšanská, M.

2003-01-01

Roč. 47, č. 4 (2003), s. 175-180 ISSN 0862-5468 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : aluminium oxide * aerogels * sonogels Subject RIV: CA - Inorganic Chemistry Impact factor: 0.449, year: 2003

Oxidation behaviour of cast aluminium matrix composites with Ce surface coatings

International Nuclear Information System (INIS)

Pardo, A.; Merino, M.C.; Arrabal, R.; Feliu, S.; Viejo, F.

2007-01-01

The oxidation behaviour of SiC-reinforced aluminium matrix composites (A3xx.x/SiCp) has been studied after Ce-based treatments. Kinetics data of oxidation process were obtained from gravimetric tests performed at different temperatures (350, 425 and 500 o C). The nature of the oxidation layer was analyzed by scanning electron and atomic force microscopy, energy dispersive X-ray analysis, X-ray photoelectron spectroscopy and X-ray diffraction. The extent of oxidation degradation in untreated composites was preferentially localized in matrix/SiCp interfaces favouring the MgO formation. Ce coatings favoured a uniform oxidation of the composite surface with MgAl 2 O 4 spinel formation. This oxide increased the surface hardness of the materials

Oxide ultrathin films science and technology

CERN Document Server

Pacchioni, Gianfranco

2012-01-01

A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

Durability of bare and anodised aluminium in atmosphere of very different corrosivities I. Bare aluminium

International Nuclear Information System (INIS)

Gonzalez, J. A.; Escudero, E.; Lopez, V.; Simancas, J.; Morcillo, M.

2004-01-01

The behaviour of bare aluminium is studied in atmospheric exposure at 11 natural testing stations with salinity levels ranging between 2.1 and 684 mg Cl''- m''-2 d''-1. In atmospheres of low or moderate aggressivity aluminium behaves as a passive material, though the insignificant corrosion that is produced is sufficient to spoil its appearance. In contrast, at salinity levels of 50 mg Cl''- m''-2 ''-1 or above, aluminium is susceptible to pitting corrosion even in the first year of atmospheric exposure, or in the second year at salinities of ≤ 10 mg Cl''- m''-2 d''-1. For comparative purposes, results are included for aluminium protected with an anodic film of 28 μm thickness exposed at the same testing stations. A 28 μm anodic film, correctly sealed, prevents the risk of localised corrosion even in the most unfavourable situations. (Author) 23 refs

Aluminium, carbonyls and cytokines in human nipple aspirate fluids: Possible relationship between inflammation, oxidative stress and breast cancer microenvironment.

Science.gov (United States)

Mannello, F; Ligi, D; Canale, M

2013-11-01

The human breast is likely exposed to Al (aluminium) from many sources including diet and personal care products. Underarm applications of aluminium salt-based antiperspirant provide a possible long-term source of exposure, especially after underarm applications to shaved and abraded skin. Al research in breast fluids likely reflects the intraductal microenvironment. We found increased levels of aluminium in noninvasively collected nipple aspirate fluids (NAF) from 19 breast cancer patients compared with 16 healthy control subjects (268 vs 131 μg/l, respectively; p Aluminium content and carbonyl levels showed a significant positive linear correlation (r(2) 0.6628, p aluminium salts) we also found a significantly increased levels of pro-inflammatory cytokines (IL-1β, IL-6, IL-12 p70, and TNF-α) and chemoattractant CC and CXC chemokines (IL-8, MIP-1α and MCP-1). In 12 invasive cancer NAF samples we found a significant positive linear correlation among aluminium, carbonyls and pro-inflammatory IL-6 cytokine (Y = 64.79x-39.63, r(2) 0.8192, p aluminium ions in oxidative and inflammatory status perturbations of breast cancer microenvironment, suggesting aluminium accumulation in breast microenvironment as a possible risk factor for oxidative/inflammatory phenotype of breast cells. © 2013.

Bonding of aluminium matrix composites for application in the transport industry

International Nuclear Information System (INIS)

Urena, A.; Gomez de Salazar, J.M.

1993-01-01

A discontinuously reinforced MMC containing 12 vol % SiC particles in an Al-Cu-Mg alloy (AA 2124) matrix has been diffusion bonded. Thick interlayers of different superplastic aluminium alloys (Al-Li 8090 and Al-Cu SUPRAL) were used to reduce the bonding pressure and ensure complete surface contact. Microstructural studies shown higher continuity in joints bonded with 8090 interlayer than with other alloys. Precipitation of rich-copper intermetallic was detected, after bonding, in the interlayer because diffusion of Cu from 2124 matrix. Results suggest that Li contained in the interlayer favours the partial disruption of the aluminium oxide film, making easier the solid state bonding. (orig.)

Electrical and optical properties of ultrasonically sprayed Al-doped zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Babu, B.J., E-mail: jbabu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico); Maldonado, A.; Velumani, S.; Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico)

2010-10-25

Aluminium-doped ZnO (AZO) films were deposited by ultrasonic spray pyrolysis (USP) technique to investigate its potential application as antireflection coating and top contact layer for copper indium gallium diselenide (CIGS) based photovoltaic cells. The solution used to prepare AZO thin films contained 0.2 M of zinc acetate and 0.2 M of aluminium pentanedionate solutions in the order of 2, 3 and 4 at.% of Al/Zn. AZO films were deposited onto glass substrates at different substrate temperatures starting from 450 deg. C to 500 deg. C. XRD and FESEM analysis revealed the structural properties of the films and almost all the films possessed crystalline structure with a preferred (0 0 2) orientation except for the 4 at.% of Al. Grain size of AZO films varied from 29.7 to 37 nm for different substrate temperatures and atomic percentage of aluminium. The average optical transmittance of all films with the variation of doping concentration and substrate temperature was 75-90% in the visible range of wavelength 600-700 nm. Optical direct band gap value of 2, 3 and 4 at.% Al-doped films sprayed at different temperatures varied from 3.32 to 3.46 eV. Hall studies were carried out to analyze resistivity, mobility and carrier concentration of the films. AZO films deposited at different substrate temperatures and at various Al/Zn ratios showed resistivity ranging from 0.12 to 1.0 x 10{sup -2} {Omega} cm. Mobility value was {approx}5 cm{sup 2}/V s and carrier concentration value was {approx}7.7 x 10{sup 19} cm{sup -3}. Minimum electrical resistivity was obtained for the 3 at.% Al-doped film sprayed at 475 deg. C and its value was 1.0 x 10{sup -2} {Omega} cm with film thickness of 602 nm. The electrical conductivity of ZnO films was improved by aluminium doping.

Study of the electronic structure of pure aluminium, aluminium oxide and nitride by spectroscopy of electrons excited under electronic and photonic bombardment (X and UV)

International Nuclear Information System (INIS)

Gautier-Soyer, Martine

1985-01-01

This research thesis reports the use of electron spectroscopy with electrons excited under electronic or photonic (X or UV) bombardment for the study of electronic state density of aluminium, aluminium oxide (Al 2 O 3 ) and aluminium nitride (AlN). The objective is to get an insight into phenomena related to technological problems of adherence, wear, lubrication, corrosion or breakdown met in metals, insulators and semiconductors. The author highlighted the presence of occupied surface states on Al(111) and Al(100), and electronic levels localised in the forbidden band of Al 2 O 3 and AlN, induced by structural defects which promote surface reactivity [fr

Characterization of PEO coatings on aluminium in the presence of silver

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Andressa; Gaspar, Marco Antonio Albuquerque; Santos, Janaina S.; Mambrini, Giovanni Pimenta; Trivinho-Strixino, Francisco, E-mail: dre.rodrigues27@gmail.com [Universidade Federal de Sao Carlos (UFSCar), Sorocaba, SP (Brazil)

2016-07-01

Full text: Plasma electrolytic oxidation (PEO) is an electrochemical technique used to produce oxide coatings on metals that improves the mechanical resistance and corrosion protection. The metal is oxidized (anodized) under high electric field producing an oxide film layer on metal surface [1]. The electrical discharges on the electrode surface promotes the crystallization of the oxide film. In this study, Al{sub 2}O{sub 3} films were produced via Al anodization in conditions of PEO in the presence of silver in the electrolyte. The silver presents bactericidal properties and low toxicity for humans [2]. The Al anodization were performed at in silicate electrolytes in the presence Ag{sup +} ions and Ag nanoparticles using a 20mA/cm² current density. A low cost aluminium was used as substrate. The effect of PEO on Ag nanoparticles was also investigated. The oxide films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray of radiation (EDX) and X-ray diffraction (XRD). The SEM micrographs revealed an irregular porous structure. EDX microanalysis showed a silver incorporation of 0,15-0,31% over oxide surface. The silicate concentration influenced the morphology and composition of the oxide films. References: [1] A.L. Yerokhin, X. Nie, A. Leyland, A. Matthews, S.J. Dowey, Surface & Coatings Technology, 122 (1999) 73-93. [2] K.R. Shin, Y.S. Kim, G.W. Kim, H.W. Yang, Y.G. Ko, D.H. Shin. Applied Surface Science, 347 (2015) 574-582. (author)

Synthesis of nano-crystalline zirconium aluminium oxynitride (ZrAlON) composite films by dense plasma Focus device

Energy Technology Data Exchange (ETDEWEB)

Khan, I.A.; Hassan, M.; Hussain, T. [Department of Physics, GC University, 54000 Lahore (Pakistan); Ahmad, R., E-mail: ahriaz@gmail.com [Department of Physics, GC University, 54000 Lahore (Pakistan); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan); Rawat, R.S. [National Institute of Education, Nanyang Technological University, Singapore 637616 (Singapore)

2009-04-01

Zirconium aluminium oxynitride multiphase composite film is deposited on zirconium substrate using energetic nitrogen ions delivered from dense plasma Focus device. X-ray diffractometer (XRD) results show that five Focus shots are sufficient to initiate the nucleation of ZrN and Al{sub 2}O{sub 3} whereas 10 Focus shots are sufficient to initiate the nucleation of AlN. XRD results reveal that crystal growth of nitrides/oxides increases by increasing Focus shots (up to 30 Focus shots) and resputtering of the previously deposited film is taken place by further increase in Focus shots (40 Focus shots). Scanning electron microscopic (SEM) results indicate the uniform distribution of spherical grains ({approx}35 nm). A smoother surface is observed for 20 Focus shots at 0 deg. angular position. SEM results also show a net-type microstructure (thread like features) of the sample treated for 30 Focus shots whereas rough surface morphology is observed for 40 Focus shots. Energy dispersive spectroscopic profiles show the distribution of different elements present in the deposited composite films. A typical microhardness value of the deposited composite films is 5255 {+-} 10 MPa for 10 grams imposed load which is 3.3 times than the microhardness values of unexposed sample. The microhardness values of the exposed samples increases with increasing Focus shots (up to 30 Focus shots) and decreases for 40 Focus shots treatment due to resputtering of the previously deposited composite film. The microhardness values of the composite films decreases by increasing the sample's angular position.

Nuclear analysis of a rare earth containing protective oxide on aluminium

Energy Technology Data Exchange (ETDEWEB)

Gorman, J.D.; Paterson, P.J.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Hughes, A.E. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Melbourne, VIC (Australia). Div. of Materials Science

1996-12-31

The aim is study was to examine the thickness of the conversion coating as well as the elemental depth distribution of cerium and molybdenum using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), Scanning Auger Electron Spectroscopy and Forward Recoil Spectroscopy (FRS). In addition, RBS has been used to examine how changes in processing conditions, particularly the treatment temperatures, influences the coating thickness and Ce distribution at each process step. SEM established that a crazed oxide structure was developed over the matrix of the alloy using the above process steps. RBS was chosen to provide elemental concentration versus depth information on these samples since it is largely insensitive to surface topography when the detector is set to high scattering angles. A other advantage of using RBS for this particular system is that the heavy elements incorporated into the coating such as Ce and Mo because of their high atomic number compared to the aluminium oxide, are well separated from aluminium and oxygen at their higher recoil energies. Forward Recoil Spectroscopy is capable of detecting hydrogen and it has been used to confirm that the coating is hydrated and to establish the hydrogen distribution within the final oxide coating on each alloy. 7 refs., 1 tab., 4 figs.

Nuclear analysis of a rare earth containing protective oxide on aluminium

Energy Technology Data Exchange (ETDEWEB)

Gorman, J D; Paterson, P J.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Hughes, A E [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Melbourne, VIC (Australia). Div. of Materials Science

1997-12-31

The aim is study was to examine the thickness of the conversion coating as well as the elemental depth distribution of cerium and molybdenum using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), Scanning Auger Electron Spectroscopy and Forward Recoil Spectroscopy (FRS). In addition, RBS has been used to examine how changes in processing conditions, particularly the treatment temperatures, influences the coating thickness and Ce distribution at each process step. SEM established that a crazed oxide structure was developed over the matrix of the alloy using the above process steps. RBS was chosen to provide elemental concentration versus depth information on these samples since it is largely insensitive to surface topography when the detector is set to high scattering angles. A other advantage of using RBS for this particular system is that the heavy elements incorporated into the coating such as Ce and Mo because of their high atomic number compared to the aluminium oxide, are well separated from aluminium and oxygen at their higher recoil energies. Forward Recoil Spectroscopy is capable of detecting hydrogen and it has been used to confirm that the coating is hydrated and to establish the hydrogen distribution within the final oxide coating on each alloy. 7 refs., 1 tab., 4 figs.

Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

Directory of Open Access Journals (Sweden)

Saharin Nurul Syazlin Binti

2017-01-01

Full Text Available The present paper reports the optimum concentration of germanium (Ge dopant in aluminium oxide (AhO3 samples prepared by combustion synthesis (CS method for thermoluminescence (TL studies. The samples were prepared at various Ge concentration i.e. 1 to 5% mol. The phase formation of un-doped and Ge-doped Al2O3 samples was determined using X-ray Diffraction (XRD. The sharp peaks present in the XRD pattern confirms the crystallinity of the samples. The samples were then exposed to 50 Gy Cobalt-60 sources (Gamma cell 220. TL glow curves were measured and recorded using a Harshaw Model 3500 TLD reader. Comparison of TL peaks were observed to obtain the best composition of Ge dopants. A simple glow curves TL peak at around 175̊C for all composition samples was observed. It was also found that the composition of aluminium oxide doped with 3.0% of germanium exhibits the highest thermoluminescence (TL intensity which is 349747.04 (a.u.

Oxidation films morphology

International Nuclear Information System (INIS)

Paidassi, J.

1960-01-01

After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

Review of Zinc Oxide Thin Films

Science.gov (United States)

2014-12-23

remains more difficult [12, 13].    Recent  research on n‐type extrinsic doping with group  III elements  revealed  that  Aluminium   (Al), Boron (B) and...tuned by  alloying  with magnesium oxide or cadmium oxide   from 7.9 eV to 2.3 eV,  spanning from deep ultraviolet (UV) to visible regions of the...88].    Doping  to  increase  and/  or  control  n‐type  electrical  conductivity is commonly done with group III elements such as  aluminium , boron

Synthesis and characterization of nanoporous anodic oxide film on aluminum in H3PO4 + KMnO4 electrolyte mixture at different anodization conditions

Science.gov (United States)

Verma, Naveen; Jindal, Jitender; Singh, Krishan Chander; Mari, Bernabe

2016-04-01

The micro structural properties of nanoporous anodic oxide film formed in H3PO4 were highly influenced by addition of a low concentration of KMnO4 (0.0005 M) in 1 M H3PO4 solution. The KMnO4 as additive enhanced the growth rate of oxide film formation as well as thickness of pore walls. Furthermore the growth rate was found increased with increase in applied current density. The increase in temperature and lack of stirring during anodization causes the thinness of pore wall which leads to increase in pore volume. With the decrease in concentration of H3PO4 in anodizing electrolyte from 1M to 0.3 M, keeping all other conditions constant, the decrease in porosity was observed. This might be due to the dissolution of aluminium oxide film in highly concentrated acidic solution.

Conditioning of radioactive aluminium generated by the VVR-S Nuclear Reactor Decommissioning Laboratory Inactive Tests

International Nuclear Information System (INIS)

Nicu, M.; Ionascu, L.; Turcau, C.; Dragolici, F.; Rotarescu, G.

2015-01-01

Aluminium is a reactive amphoteric metal, readily forming a protective oxide layer on contact with air or water. However, as the oxides are amphoteric, aluminium is not resistant to corrosion in acidic and alkaline conditions, because the protective films dissolve. As a consequence radioactive waste containing bulk aluminium alloys can not be embedded in Ordinary Portland Cement (OPC). A potential encapsulating material for the radioactive aluminium is potassium magnesium phosphate (MKP). This paper presents the characterization results obtained from analyzing the potential magnesium phosphate formulations and assesses its potential to reduce the corrosion of aluminium. A series of experiments have been performed. The main conclusions of the paper are as follows. First, the pH values of magnesium phosphate formulation investigated increased gradually over the test duration, with pH measurement ranging from 8.1 - 9.1, indicating lower values compared with the reference composite OPC (pH ∼ 13). The reduction of pH is an important controlling factor for the corrosion of aluminium. Secondly, according to XRD, the hardened magnesium phosphate matrix is polycrystalline and the main reaction product of magnesium phosphate cement formulations was confirmed as MgKPO 4 -6H 2 O, which was found to dominate the crystalline phase composition. Thirdly, the compressive strengths obtained for magnesium phosphate matrices investigated are included in the accepted limits for the embedding matrix with cement (above 5 N/mm 2 ). And fourthly, the corrosion of metallic aluminium in magnesium phosphate matrix is markedly reduced in comparison with the composite OPC

Rare Earth Oxide Thin Films

CERN Document Server

Fanciulli, Marco

2007-01-01

Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

Thin film metal-oxides

CERN Document Server

Ramanathan, Shriram

2009-01-01

Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Boltz, Janika

2011-12-12

Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

The properties of nanocomposite aluminium-silicon based thin films deposited by filtered arc deposition

Energy Technology Data Exchange (ETDEWEB)

Bendavid, A.; Martin, P.J.; Takikawa, H

2002-12-02

Thin films of aluminium silicon oxynitride have been deposited on conducting (100) silicon wafers by filtered arc deposition (FAD) under nitrogen and/or oxygen gas flow. The influence of the N{sub 2}/O{sub 2} flow ratio on the crystal structure, optical and mechanical properties has been investigated. The results of X-ray diffraction showed that the film structure comprised of an AlN crystallite with amorphous Si{sub 3}N{sub 4} and SiO{sub x}. The optical properties over the range of 350-800 nm were measured using spectroscopic ellipsometry and found to be strongly dependent on N{sub 2}/O{sub 2} flow ratio. The refractive index values of the films were measured to be in the range of 2.2-1.64 at a wavelength of 670 nm for oxygen flow range of 0-100%. The hardness of the films was found to be strongly dependent on the oxygen content in the film. The hardness range of the films was between 10 and 22 GPa and for the stress between 0.3 and 1.2 GPa.

Thin film pc-Si by aluminium induced crystallization on metallic substrate

Directory of Open Access Journals (Sweden)

Cayron C.

2013-04-01

Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

Aluminium induced oxidative stress results in decreased mitochondrial biogenesis via modulation of PGC-1α expression.

Science.gov (United States)

Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Kandimalla, Ramesh J L; Bal, Amanjit; Gill, Kiran Dip

2013-12-01

The present investigation was carried out to elucidate a possible molecular mechanism related to the effects of aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of Peroxisome proliferator activated receptor gamma co-activator 1α (PGC-1α) and its downstream targets i.e. Nuclear respiratory factor-1(NRF-1), Nuclear respiratory factor-2(NRF-2) and Mitochondrial transcription factor A (Tfam) in mitochondrial biogenesis. Aluminium lactate (10mg/kgb.wt./day) was administered intragastrically to rats for 12 weeks. After 12 weeks of exposure, we found an increase in ROS levels, mitochondrial DNA oxidation and decrease in citrate synthase activity in the Hippocampus (HC) and Corpus striatum (CS) regions of rat brain. On the other hand, there was a decrease in the mRNA levels of the mitochondrial encoded subunits-NADH dehydrogenase (ND) subunits i.e. ND1, ND2, ND3, Cytochrome b (Cytb), Cytochrome oxidase (COX) subunits i.e. COX1, COX3, ATP synthase (ATPase) subunit 6 along with reduced expression of nuclear encoded subunits COX4, COX5A, COX5B of Electron transport chain (ETC). Besides, a decrease in mitochondrial DNA copy number and mitochondrial content in both regions of rat brain was observed. The PGC-1α was down-regulated in aluminium treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α in aluminium treated rats. Electron microscopy results revealed a significant increase in the mitochondrial swelling, loss of cristae, chromatin condensation and decreases in mitochondrial number in case of aluminium treated rats as compared to control. So, PGC-1α seems to be a potent target for aluminium neurotoxicity, which makes it an almost ideal target to control or limit the damage that has been associated with the defective mitochondrial function seen in neurodegenerative diseases. © 2013.

Expression of metallothioneins I and II related to oxidative stress in the liver of aluminium-treated rats.

Science.gov (United States)

Ghorbel, Imen; Chaabane, Mariem; Elwej, Awatef; Boudawara, Ons; Abdelhedi, Sameh; Jamoussi, Kamel; Boudawara, Tahya; Zeghal, Najiba

2016-10-01

Hepatotoxicity, induced by aluminium chloride (AlCl 3 ), has been well studied but there are no reports about liver metallothionein (MT) genes induction. Therefore, it is of interest to establish the mechanism involving the relation between MT gene expression levels and the oxidative stress status in hepatic cells of aluminium-treated rats. Aluminium (Al) was administered to rats in their drinking water at a dose of 50 mg/kg body weight for three weeks. AlCl 3 provoked hepatotoxicity objectified by an increase in malondialdehyde (MDA), hydrogen peroxide (H 2 O 2 ), advanced oxidation protein products (AOPP), protein carbonyls (PCO) and a decrease in reduced glutathione (GSH), non-protein thiols (NPSH) and vitamin C. CAT and Glutathione peroxidase (GPx) activities were decreased while Mn-SOD gene expression, total Metallothionein content and MT I and MT II genes induction were increased. There are changes in plasma of some trace elements, albumin levels, transaminases, LDH and ALP activities. All these changes were supported by histopathological observations.

Optical and electrical properties of negatively charged aluminium oxynitride films

Energy Technology Data Exchange (ETDEWEB)

Jang, Kyungsoo; Jung, Sungwook; Lee, Jeoungin; Lee, Kwangsoo; Kim, Jaehong; Son, Hyukjoo [School of information and communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of); Yi, Junsin [School of information and communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of)], E-mail: yi@yurim.ac.kr

2008-11-03

Aluminium oxynitride (AlON) thin films were deposited by Radio Frequency (RF) magnetron sputtering on n-type silicon (Si) substrate of (100) orientation using argon (Ar) and oxygen (O{sub 2}) gases at substrate temperature of 450 {sup o}C. To know the change in electrical properties with gases ratio, a deposition was carried out for 140 s with Ar:O{sub 2} ratio changed from 1:3 to 4:3. After that, electrical properties of Metal-Insulator-Semiconductor (MIS) structure with AlON was analyzed. For Ar:O{sub 2} ratios from 1:3 to 4:3, all samples showed characteristics of negative charge. In particular, when Ar:O{sub 2} were 2:3 and 3:3, the value of flatband voltage in normal C-V curve showed above 14 V. The composition of the AlON in the film was investigated using X-ray Photoelectron Spectroscopy (XPS). The flatband voltages (V{sub FB}) in C-V curves were found to depend on compositions. The characteristics of photon energy band gap were obtained by UV/VIS spectrum.

High Temperature Strength of Oxide Dispersion Strengthened Aluminium

DEFF Research Database (Denmark)

Clauer, A.H.; Hansen, Niels

1984-01-01

constant (except for the material with the lowest oxide content). The high temperature values of the modulus-corrected yield stresses are approximately two-thirds of the low temperature value. During high temperature creep, there is a definite indication of a threshold stress. This threshold stress......The tensile flow stress of coarse-grained dispersion strengthened Al-Al2O3 materials were measured as a function of temperature (77–873 K) and volume fraction (0.19-0.92 vol.%) of aluminium oxide. For the same material, the creep strength was determined as a function of temperature in the range 573......–873 K. The modulus-corrected yield stress (0.01 offset) is found to be temperature independent at low temperature (195–472 K). Between 473 and 573 K, the yield stress starts to decrease with increasing temperature. At high temperatures (573–873 K), the modulus-corrected yield stress is approximately...

Phase Transformation of Hot Dipped Aluminium during High Temperature Oxidation

International Nuclear Information System (INIS)

Zaifol Samsu; Muhammad Daud; Hishamuddin Husain; Mohd Saari Ripin; Rusni Rejab; Zaiton Selamat; Mohd Shariff Sattar

2014-01-01

Low alloy carbon steel was coated by hot-dipping into a molten aluminum bath. Isothermal oxidations were carried out at 750 degree Celsius in static air to study the oxidation behaviour of the hot-dipped aluminide steel. The phase transformation in the aluminide layer during diffusion at 750 degree Celsius in static air was analyzed by SEM-EDX and XRD. After hot-dip treatment, the coating layers consisted of three phases, where Al, thinner layer of FeAl 3 , and thicker layer of Fe 2 Al 5 were detected from external topcoat to the aluminide/ steel substrate. After oxidation, the Fe 2 Al 5 formed during the immersion process completely transformed to Fe 2 Al 5 , FeAl 2 , FeAl and Al-Fe(Al) phases because of the composition gradient and the chemical diffusion by oxidation. After oxidation, there are some voids were found at the coating/ substrate interface due to the rapid inter-diffusion of iron and aluminium during oxidation. The FeAl phase kept growing with increasing exposure time at 750 degree Celsius, while the Fe 2 Al 5 was consumed during oxidation. After 168 hrs oxidation, the Fe 2 Al 5 phase was going disappeared as the aluminum layer was consumed. (author)

Corrosion of gadolinium aluminate-aluminium oxide samples in fully desalinated water at 575 K

International Nuclear Information System (INIS)

Hattenbach, K.; Zimmermann, H.U.

1978-07-01

Corrosion tests have been carried out for 1 1/2 years on gadolinium aluminate/aluminium oxide samples (burnable poison for ship propulsion reactors) with and without cans at 575 K in fully desalinated water. It was found that this substance is highly corrosion-resistant. (orig./HP) [de

Facile synthesis of aluminium doped zinc oxide-polyaniline hybrids for photoluminescence and enhanced visible-light assisted photo-degradation of organic contaminants

Energy Technology Data Exchange (ETDEWEB)

Mitra, Mousumi [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Ghosh, Amrita; Mondal, Anup [Department of Chemistry, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata 700032, West Bengal (India); Ganguly, Saibal [Department of Chemical Engineering, BITS Pilani, K K Birla Goa Campus, NH 17 B Bypass Road, Zuarinagar, Sancoale, Goa 403726 (India); Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India)

2017-04-30

Graphical abstract: The present work focuses on the synergistic effect of a novel hybrid hetero structure (n-type aluminum doped zinc oxide and p-type polyaniline), combining both sol-gel and in-situ oxidative polymerization method and studying its photoluminescence (PL), photocatalytic, electrochemical impedance spectroscopy (EIS), linear scan voltammetry (LSV) and photocurrent properties. - Highlights: • Aluminium doped zinc oxide-polyaniline (PAZ) hybrids were prepared by polymerization of aniline using aluminium doped zinc oxide nanorod templates. • The hybrids were used as visible light photocatalysts for methyl orange (MO) and rose bengal (RB) dye degradation. • First order rate constants of the photocatalytic process were evaluated as 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes respectively. • Photoluminescence and electrochemical properties were in accord with the photocatalytic performance of the hybrid. - Abstract: The emergence of organic-inorganic photoactive materials has led to marked progress in the field of heterogeneous visible-light photocatalysis. Visible-light active aluminium doped zinc oxide-polyaniline (PAZ) hybrid was prepared employing in-situ oxidative polymerization of polyaniline (PANI) in the presence of aluminium doped zinc oxide (AlZnO) nanorods, synthesized via sol-gel route. The compositions, structural and optical properties of the synthesized hybrids were characterized. Among various samples, the 22 wt% aluminium doped zinc oxide-polyaniline (PAZ 3) hybrid show the best photocatalytic action for the degradation of methyl orange (MO) and rose bengal (RB) dyes under visible-light illumination, even after repeated use. The performance of the photocatalytic process was determined by the first order rate constant, 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes, respectively. Scavenger test was used to determine the role of active

Stabilized chromium oxide film

Science.gov (United States)

Garwin, Edward L.; Nyaiesh, Ali R.

1988-01-01

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Science.gov (United States)

Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

2017-11-01

Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

Electron beam welding of aluminium components

International Nuclear Information System (INIS)

Maajid, Ali; Vadali, S.K.; Maury, D.K.

2015-01-01

Aluminium is one of the most widely used materials in industries like transportation, shipbuilding, manufacturing, aerospace, nuclear, etc. The challenges in joining of aluminium are distortion, cleanliness and quality. Main difficulties faced during fusion welding of aluminium components are removal of surface oxide layer, weld porosity, high heat input requirement, distortion, hot cracking, etc. Physical properties of aluminium such as its high thermal conductivity, high coefficient of thermal expansion, no change in colour at high temperature, large difference in the melting points of the metal and its oxide (∼ 1400 °C) compound the difficulties faced during welding. Gas Tungsten Arc Welding (GTAW), Gas Metal Arc Welding (GMAW), Plasma Arc Welding (PAW), etc are generally used in industries for fusion welding of aluminium alloys. However in case of thicker jobs the above processes are not suitable due to requirements of elaborate edge preparation, preheating of jobs, fixturing to prevent distortion, etc. Moreover, precise control over the heat input during welding and weld bead penetration is not possible with above processes. Further, if heat sensitive parts are located near the weld joint then high energy density beam welding process like Electron Beam Welding (EBW) is the best possible choice for aluminium welding.This paper discusses EB welding of aluminium components, typical geometry of components, selection/optimization of welding parameters, problems faced during standardization of welding and process parameters and their remedies etc.

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

Directory of Open Access Journals (Sweden)

Krawczak Ewelina

2017-01-01

Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

International Nuclear Information System (INIS)

Sharma, Mamta; Mehra, R.M.

2010-01-01

ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 o C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.

Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

Energy Technology Data Exchange (ETDEWEB)

Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021 (India); Mehra, R.M., E-mail: rammehra2003@yahoo.co [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021 (India)

2010-05-03

ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 {sup o}C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.

Oxidation of an aluminium-magnesium alloy in liquid state. Methodology of determination of mechanisms from not necessarily repeatable experiments

International Nuclear Information System (INIS)

Surla, Karine

1998-01-01

This research thesis reports the study of the oxidation of an aluminium-5 pc magnesium alloy in its liquid state in an oxygen environment, using thermogravimetric analysis and that of magnesium in its solid state. In a first part, the author reports a thermodynamic and bibliographical study on magnesium transformation in its solid state (Mg/O 2 and Mg/H 2 O systems, transformation with dry and humid synthetic air, oxidation inhibitors) and on Al-Mg alloy transformation in presence of oxygen (thermodynamic properties of aluminium-rich Al-Mg alloys, Al-Mg/O 2 /N 2 and Al-Mg/O 2 /N 2 /H 2 O systems). The next parts address the selection of reaction systems for the different cases (oxidation of solid magnesium in oxygen, oxidation of the Al-Mg alloy in oxygen), the modelling of the formation of magnesia from solid magnesium and from the Al-Mg alloy, and the modelling of the liquid Al-Mg A5182 alloy oxidation in oxygen [fr

Iron and aluminium oxides containing industrial wastes as adsorbents of heavy metals: Application possibilities and limitations.

Science.gov (United States)

Jacukowicz-Sobala, Irena; Ociński, Daniel; Kociołek-Balawejder, Elżbieta

2015-07-01

Industrial wastes with a high iron or aluminium oxide content are produced in huge quantities as by-products of water treatment (water treatment residuals), bauxite processing (red mud) and hard and brown coal burning in power plants (fly ash). Although they vary in their composition, the wastes have one thing in common--a high content of amorphous iron and/or aluminium oxides with a large specific surface area, whereby this group of wastes shows very good adsorbability towards heavy metals, arsenates, selenates, etc. But their physical form makes their utilisation quite difficult, since it is not easy to separate the spent sorbent from the solution and high bed hydraulic resistances occur in dynamic regime processes. Nevertheless, because of the potential benefits of utilising the wastes in industrial effluent treatment, this issue attracts much attention today. This study describes in detail the waste generation processes, the chemical structure of the wastes, their physicochemical properties, and the mechanisms of fixing heavy metals and semimetals on the surface of iron and aluminium oxides. Typical compositions of wastes generated in selected industrial plants are given. A detailed survey of the literature on the adsorption applications of the wastes, including methods of their thermal and chemical activation, as well as regeneration of the spent sorbents, is presented. The existing and potential ways of modifying the physical form of the discussed group of wastes, making it possible to overcome the basic limitation on their practical use, are discussed. © The Author(s) 2015.

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Dissolution and Protection of Aluminium Oxide in Corrosive Aqueous Media - An Ellipsometry and Reflectometry Study

NARCIS (Netherlands)

Karlsson, P.M.; Postmus, B.R.; Palmqvist, A.E.C.

2009-01-01

Dissolution of alumina has been studied from wafers in aqueous solution by means of ellipsometry and reflectometry. It was discovered that the dissolution of aluminium oxide is promoted by ethanol amines like N,N-bis(2-hydroxyethyl)glycine and triethanolamine, and that this dissolution is retarded

N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2008-08-30

In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

Enhanced heterogeneous nucleation on oxides in Al alloys by intensive shearing

International Nuclear Information System (INIS)

Li, H T; Wang, Y; Fan, Z

2012-01-01

Oxides, in liquid aluminium alloys, can cause severe difficulties during casting, contribute to the formation of cast defects and degrade the mechanical properties of cast components. In this paper, microstructural characteristics of naturally occurring oxides in the melts of commercial purity aluminium and Al-Mg binary alloys have been investigated. They are characterised by densely populated oxide particles within liquid oxide films. With intensive shearing, the particle agglomerates are dispersed into uniformly distributed individual particles. It was found that with intensive melt shearing, grain refinement of α-Al can be achieved by the dispersed oxide particles. The smaller lattice misfit between the oxide particles and the α-Al phase is characterised by a well defined crystallographic orientation relationship. And the mechanisms of grain refinement are discussed.

Accumulation of Aluminium and Physiological Status of Tree Foliage in the Vicinity of a Large Aluminium Smelter

Directory of Open Access Journals (Sweden)

E. D. Wannaz

2012-01-01

Full Text Available A pollution gradient was observed in tree foliage sampled in the vicinity of a large aluminium production facility in Patagonia (Argentina. Leaves of Eucalyptus rostrata, and Populus hybridus and different needle ages of Pinus spec. were collected and concentrations of aluminium (Al and sulphur (S as well as physiological parameters (chlorophyll and lipid oxidation products were analyzed. Al and S concentrations indicate a steep pollution gradient in the study showing a relationship with the physiological parameters in particular membrane lipid oxidation products. The present study confirms that aluminium smelting results in high Al and sulphur deposition in the study area, and therefore further studies should be carried out taking into account potentially adverse effects of these compounds on human and ecosystem health.

Aluminium induced oxidative stress results in decreased mitochondrial biogenesis via modulation of PGC-1α expression

Energy Technology Data Exchange (ETDEWEB)

Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Kandimalla, Ramesh J.L. [Department of Biochemistry, Postgraduate Institute of Medical Education and Research, Chandigarh 160012 (India); Bal, Amanjit [Department of Histopathology, Postgraduate Institute of Medical Education and Research, Chandigarh (India); Gill, Kiran Dip, E-mail: kdgill2002@yahoo.co.in [Department of Biochemistry, Postgraduate Institute of Medical Education and Research, Chandigarh 160012 (India)

2013-12-01

The present investigation was carried out to elucidate a possible molecular mechanism related to the effects of aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of Peroxisome proliferator activated receptor gamma co-activator 1α (PGC-1α) and its downstream targets i.e. Nuclear respiratory factor-1(NRF-1), Nuclear respiratory factor-2(NRF-2) and Mitochondrial transcription factor A (Tfam) in mitochondrial biogenesis. Aluminium lactate (10 mg/kg b.wt./day) was administered intragastrically to rats for 12 weeks. After 12 weeks of exposure, we found an increase in ROS levels, mitochondrial DNA oxidation and decrease in citrate synthase activity in the Hippocampus (HC) and Corpus striatum (CS) regions of rat brain. On the other hand, there was a decrease in the mRNA levels of the mitochondrial encoded subunits–NADH dehydrogenase (ND) subunits i.e. ND1, ND2, ND3, Cytochrome b (Cytb), Cytochrome oxidase (COX) subunits i.e. COX1, COX3, ATP synthase (ATPase) subunit 6 along with reduced expression of nuclear encoded subunits COX4, COX5A, COX5B of Electron transport chain (ETC). Besides, a decrease in mitochondrial DNA copy number and mitochondrial content in both regions of rat brain was observed. The PGC-1α was down-regulated in aluminium treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α in aluminium treated rats. Electron microscopy results revealed a significant increase in the mitochondrial swelling, loss of cristae, chromatin condensation and decreases in mitochondrial number in case of aluminium treated rats as compared to control. So, PGC-1α seems to be a potent target for aluminium neurotoxicity, which makes it an almost ideal target to control or limit the damage that has been associated with the defective mitochondrial function seen in neurodegenerative diseases. - Highlights: • Aluminium decreases the mRNA levels of mitochondrial and nuclear encoded

Advances in development and application of aluminium batteries

DEFF Research Database (Denmark)

Qingfeng, Li; Zhuxian, Qiu

2001-01-01

Aluminium has long attracted attention as a potential battery anode because of its high theoretical voltage and specific energy. The protective oxide layer at aluminium surface is however detrimental to its performance to achieve its reversible potential, and also causing the delayed activation o...... aluminium batteres, especially aluminium-air batteries, and a wide range of their applications from emergency power supplies, reserve batteries field portable batteries, to batteries for electric vehicles and underwater propulsion....

Interaction of amines with native aluminium oxide layers in non-aqueous environment: Application to the understanding of the formation of epoxy-amine/metal interphases

International Nuclear Information System (INIS)

Mercier, D.; Rouchaud, J.-C.; Barthes-Labrousse, M.-G.

2008-01-01

Interaction of propylamine (PA), 1,2-diaminoethane (DAE) or 3-aminomethyl-3,5,5-trimethylcyclohexylamine (isophorone diamine, IPDA) with native aluminium oxide layers in non-aqueous environment has been studied using time-resolved inductively coupled plasma optical emission spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS). The formation of several surface complexes has been evidenced. Monodentate and bidentate metal-bond surface complexes (MBSC) result from interactions between the amine terminations of the molecule and aluminium cations by donation of the N lone electron pair to the metal ion (Lewis-like mechanism leading to O-Al...N bonds). Monodentate and bidentate hydrogen-bond surface complexes (HBSC) are due to interaction of the amino group with surface hydroxyl groups by protonation of the amine termination (Bronsted-like mechanism leading to the formation of Al-OH...N bonds) or interaction with carbonaceous contamination (C x O y H z ...N bonds). Diamines can also form mixed complexes with one amino group forming an O-Al...N bond and the other group forming an Al-OH...N or C x O y H z ...N bond. Al-OH...N and C x O y H z ...N bonds are less stable under vacuum than O-Al...N bonds, leading to partial desorption of the DAE molecules in vacuum and modification of the interaction modes. Only DAE and IPDA can lead to partial dissolution of the aluminium native (hydr)oxide films. A detailed mechanism of dissolution has been proposed based on the formation of mononuclear bidentate (chelate) MBSC by ligand exchange between the terminal η 1 -OH and bridged μ 2 -OH surface sites and the amino terminations of the molecule. The detachment of this complex from the surface is likely to be the precursor step to the formation of the interphase in epoxy-amine/metal systems

Chemical composition and morphology of oxidic ceramics at filtration of steel deoxidised by aluminium

Directory of Open Access Journals (Sweden)

J. Bažan

2009-10-01

Full Text Available Composition and morphology of filter ceramics were investigated during filtration of steel deoxidised by aluminium. Filtration was realized with use of filters based on oxidic ceramics Cr2O3, TiO2, SiO2, ZrO2, Al2O3, 3Al2O3•2SiO2 and MgO•Al2O3. It was established that change of interphase (coating occurs during filtration of steel on the surface of capillaries of ceramics, where content of basic oxidic component decreases. Loss of oxidic component in the coating is replaced by increase of oxides of manganese and iron and it is great extent inversely proportional to the value of Gibbs’ energy of oxide, which forms this initial basis of ceramics.

The effects of aluminium and selenium supplementation on brain ...

African Journals Online (AJOL)

This in vivo study was designed to investigate the potential of aluminium (Al), in the absence of added iron, to participate in either antioxidant or pro-oxidant events. Some markers of oxidative stress were determined in liver and brain of rats exposed to aluminium lactate, either alone or in the presence of dietary supplements ...

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

International Nuclear Information System (INIS)

Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

2013-01-01

Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

The Crucial Role of the K+-Aluminium Oxide Interaction in K+-Promoted Alumina- and Hydrotalcite-Based Materials for CO2 Sorption at High Temperatures

Energy Technology Data Exchange (ETDEWEB)

Walspurger, S.; Boels, L.; Cobden, P.D.; Elzinga, G.D.; Haije, W.G.; Van den Brink, R.W. [Energy Research Centre of the Netherlands ECN, Westerduinweg 3, 1755LE, Petten (Netherlands)

2008-09-15

CO2-free hydrogen can be produced from coal gasification power plants by pre-combustion decarbonisation and carbon dioxide capture. Potassium carbonate promoted hydrotalcite-based and alumina-based materials are cheap and excellent materials for high-temperature (300-500C) adsorption of CO2, and particularly promising in the sorption-enhanced water gas shift (SEWGS) reaction. Alkaline promotion significantly improves CO2 reversible sorption capacity at 300-500C for both materials. Hydrotalcites and promoted hydrotalcites, promoted magnesium oxide and promoted -alumina were investigated by in situ analytical methods (IR spectroscopy, sorption experiments, X-ray diffraction) to identify structural and surface rearrangements. All experimental results show that potassium ions actually strongly interact with aluminium oxide centres in the aluminium-containing materials. This study unambiguously shows that potassium promotion of aluminium oxide centres in hydrotalcite generates basic sites which reversibly adsorb CO2 at 400C.

Study of corrosion in aluminium using neutron radiography technique

International Nuclear Information System (INIS)

Islam, M.N.; Alam, M.K.; Saklayen, M.A.; Ahsan, M.H.; Islam, S.M.A.; Zaman, M.A.

2000-01-01

Neutron radiography technique has been adopted for detection of corrosion in aluminium by filling artificially made holes on aluminium slab with Al(OH) 3 . The contrast between the optical densities of corrosion products and aluminium slab was assessed from the densitometric measurements. Variation of optical density difference with sample thickness has also been studied. The results confirm that approximately 0.039 mm thick corrosion products having diameter 10 mm can easily be detected in 2 cm thick aluminium slab. The linear attenuation coefficient of Al(OH) 3 has been obtained as 0.9447. From the present investigation it is confirmed that film neutron radiography (NR) technique is helpful for investigation of Al(OH) 3 type corrosion product in aluminium. (author)

Cold pressure welding of aluminium-steel blanks: Manufacturing process and electrochemical surface preparation

Science.gov (United States)

Schmidt, Hans Christian; Homberg, Werner; Orive, Alejandro Gonzalez; Grundmeier, Guido; Hordych, Illia; Maier, Hans Jürgen

2018-05-01

In this study the manufacture of aluminium-steel blanks by cold pressure welding and their preparation for a welding process through electrochemical surface treatment are investigated and discussed. The cold pressure welding process was done with an incremental rolling tool that allows for the partial pressure welding of two blanks along a prepared path. The influence of the surface preparation by electrochemical deposition of bond promoting organosilane-based agents and roughening on a nano-scale is investigated and compared to conventional surface treatments. Coating the surfaces with a thin organosilane-based film incorporating specific functional groups should promote additional bonding between the mating oxide layers; its influence on the total weld strength is studied. Pressure welding requires suitable process strategies, and the current advances in the proposed incremental rolling process for the combination of mild steel and aluminium are presented.

The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

NARCIS (Netherlands)

Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

2013-01-01

Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon

UV photodissociation spectroscopy of oxidized undecylenic acid films.

Science.gov (United States)

Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

2006-03-16

Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

Electron trapping in neutron-irradiated very thin films of Al2O3

International Nuclear Information System (INIS)

Srivastava, P.C.; Bardhan, A.R.

1979-01-01

Oxide layers of thicknesses less than 100 A have been prepared by thermal-oxidation of a base metal electrode film of aluminium. These films were then neutron-irradiated from a laboratory Ra-Be source to a fluence of approximately 10 11 neutrons cm -2 and the sandwich structure, Al-Al 2 O 3 -Au, was completed by depositing a thin metal film of gold over the irradiated oxide layer. D.C. steady and transient flow through the sandwich structures have been studied. Results obtained in the experiments with irradiated sandwiches have been compared with unirradiated ones to show that traps are introduced because of the damage caused by the incident neutrons. Transient voltage measurement across the junction gives a trap density of approximately 10 18 cm -3 . A capture cross-section of the order 10 -28 cm 2 is estimated for the traps. It is found that the (identified) traps are uniformly distributed within an energy of 0.099 eV below the conduction band edge of aluminium oxide. The physical nature of the traps is discussed by comparing the capture cross-sections of the physically known trapping centres. The possibility of vacancies or F-centres acting as traps (for the identified ones) has been suggested. (author)

Laser patterning of superconducting oxide films

International Nuclear Information System (INIS)

Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

1988-01-01

The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

International Nuclear Information System (INIS)

Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

2015-01-01

Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

2015-01-28

Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

Aluminium recovery from waste incineration bottom ash, and its oxidation level.

Science.gov (United States)

Biganzoli, Laura; Grosso, Mario

2013-09-01

The recovery of aluminium (Al) scraps from waste incineration bottom ash is becoming a common practice in waste management. However, during the incineration process, Al in the waste undergoes oxidation processes that reduce its recycling potential. This article investigates the behaviour of Al scraps in the furnace of two selected grate-fired waste-to-energy plants and the amount recoverable from the bottom ash. About 21-23% of the Al fed to the furnace with the residual waste was recovered and potentially recycled from the bottom ash. Out of this amount, 76-87% was found in the bottom ash fraction above 5 mm and thus can be recovered with standard eddy current separation technology. These values depend on the characteristics and the mechanical strength of the Al items in the residual waste. Considering Al packaging materials, about 81% of the Al in cans can be recovered from the bottom ash as an ingot, but this amount decreases to 51% for trays, 27% for a mix of aluminium and poly-laminated foils and 47% for paper-laminated foils. This shows that the recovery of Al from the incineration residues increases proportionally to the thickness of the packaging.

Electrical and optical properties of zinc oxide: thin films

International Nuclear Information System (INIS)

Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

1992-01-01

Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

Evaluation of the mechanical properties of microarc oxidation coatings and 2024 aluminium alloy substrate

CERN Document Server

Xue Wen Bin; Deng Zhi Wei; Chen Ru Yi; Li Yong Liang; Zhang Ton Ghe

2002-01-01

A determination of the phase constituents of ceramic coatings produced on Al-Cu-Mg alloy by microarc discharge in alkaline solution was performed using x-ray diffraction. The profiles of the hardness, H, and elastic modulus, E, across the ceramic coating were determined by means of nanoindentation. In addition, a study of the influence of microarc oxidation coatings on the tensile properties of the aluminium alloy was also carried out. The results show that the H-and E-profiles are similar, and both of them exhibit a maximum value at the same depth of coating. The distribution of the alpha-Al sub 2 O sub 3 phase content determines the H- and E-profiles of the coatings. The tensile properties of 2024 aluminium alloy show less change after the alloy has undergone microarc discharge surface treatment.

Oxidation of ruthenium thin films using atomic oxygen

Energy Technology Data Exchange (ETDEWEB)

McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

2015-12-31

In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin films • Oxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

Use of thin films obtained by electron beam evaporation as optical wave guide

International Nuclear Information System (INIS)

Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

1986-01-01

Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

Protective effect of curcumin (Curcuma longa), against aluminium toxicity: Possible behavioral and biochemical alterations in rats.

Science.gov (United States)

Kumar, Anil; Dogra, Samrita; Prakash, Atish

2009-12-28

Aluminium is a potent neurotoxin and has been associated with Alzheimer's disease (AD) causality for decades. Prolonged aluminium exposure induces oxidative stress and increases amyloid beta levels in vivo. Current treatment modalities for AD provide only symptomatic relief thus necessitating the development of new drugs with fewer side effects. The aim of the study was to demonstrate the protective effect of chronic curcumin administration against aluminium-induced cognitive dysfunction and oxidative damage in rats. Aluminium chloride (100 mg/kg, p.o.) was administered to rats daily for 6 weeks. Rats were concomitantly treated with curcumin (per se; 30 and 60 mg/kg, p.o.) daily for a period of 6 weeks. On the 21st and 42nd day of the study behavioral studies to evaluate memory (Morris water maze and elevated plus maze task paradigms) and locomotion (photoactometer) were done. The rats were sacrificed on 43rd day following the last behavioral test and various biochemical tests were performed to assess the extent of oxidative damage. Chronic aluminium chloride administration resulted in poor retention of memory in Morris water maze, elevated plus maze task paradigms and caused marked oxidative damage. It also caused a significant increase in the acetylcholinesterase activity and aluminium concentration in aluminium treated rats. Chronic administration of curcumin significantly improved memory retention in both tasks, attenuated oxidative damage, acetylcholinesterase activity and aluminium concentration in aluminium treated rats (Paluminium-induced cognitive dysfunction and oxidative damage.

Vortex pinning in superconducting Nb thin films deposited on nanoporous alumina templates

DEFF Research Database (Denmark)

Vinckx, W.; Vanacken, J.; Moshchalkov, V.V.

2006-01-01

We present a study of magnetization and transport properties of superconducting Nb thin films deposited on nanoporous aluminium oxide templates. Periodic oscillations in the critical temperature vs. field, matching effects in fields up to 700 mT and strongly enhanced critical currents were observed...

Study of the oxides nature effect of rare and rare earth elements on the aluminium-chromium catalyst properties

International Nuclear Information System (INIS)

Dadashev, B.A.; Abbasov, S.G.; Sarydzhanov, A.A.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neftekhimicheskikh Protsessov)

1975-01-01

Adsorption studies have shown that oxides of rare and rare earth elements REE appreciably influence the structure of aluminium-chrome catalyst. Alkaline promotors, unlike REE, contribute to the formation of developed contact surface. Electrophysical investigations show that oxides of rare elements introduced into the catalyst increase its conductivity and activation energy. As for REE oxides, they decrease the conductivity and increase the activation energy. Catalysts with developed surface and high conductivity are also more active in the reaction of isopentane dehydration

Chitosan/graphene oxide biocomposite film from pencil rod

Science.gov (United States)

Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

2018-03-01

Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

Anodization of Aluminium using a fast two-step process

Indian Academy of Sciences (India)

283.6 eV. Keywords. Anodization; phosphoric acid; anodization time; anodized aluminium oxide; aluminium. ... of anodization.5–7 The AAO layer has a large band gap, good ..... transmittance increases as the anodised membrane is heated to ...

Interface and oxide traps in high-κ hafnium oxide films

International Nuclear Information System (INIS)

Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

2004-01-01

The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

Electrochemical investigations of ion-implanted oxide films

International Nuclear Information System (INIS)

Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

1985-01-01

Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

Aluminium, gallium, indium and thallium

International Nuclear Information System (INIS)

Brown, Paul L.; Ekberg, Christian

2016-01-01

Aluminium can exist in a number of oxyhydroxide mineral phases including corundum, diaspore, boehmite and gibbsite. The stability constants at zero ionic strength reported for Al(OH) 3 (aq) vary linearly with respect to the inverse of absolute temperature. A full suite of thermodynamic parameters is available for all aluminium phases and hydrolysis species. Gallium hydrolyses to a greater extent than aluminium, with the onset of hydrolysis reactions occurring just above a pHof 1. In fact, even though aluminium has the smallest ionic radius of this series of metals, it has the weakest hydrolysis species and oxide/hydroxide phases.This is due to the presence of stabilising d-orbitals in the heavier metals, gallium, indium and thallium(III). There are few available data for the stability constants of indium(III) hydrolysis species. Of those that are available, the range in the proposed stability constants covers many orders of magnitude.

Investigation of Al2O3 barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

International Nuclear Information System (INIS)

Maindron, Tony; Aventurier, Bernard; Ghazouani, Ahlem; Jullien, Tony; Rochat, Névine; Simon, Jean-Yves; Viasnoff, Emilie

2013-01-01

Al 2 O 3 films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ 3 ) films made onto silicon wafers. It has been found that a thick ALD-deposited Al 2 O 3 layer (> 11 nm) greatly prevents the photo-oxidation of AlQ 3 films when exposed to continuous UV irradiation (350 mW/cm 2 ). Thin Al 2 O 3 thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al 2 O 3 layer have been easily observed as non-fluorescent AlQ 3 singularities, or black spots, under UV light on the system Si/AlQ 3 /Al 2 O 3 stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h −1 ·cm −2 and 0.243 h −1 ·cm −2 respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO 2 onto the Si/AlQ 3 /Al 2 O 3 sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h −1 ·cm −2 and 0.04 h −1 ·cm −2 respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al 2 O 3 films and confirm the general idea that a single Al 2 O 3 ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an additional moisture-stable layer. - Highlights: • Thin Al 2 O 3 films have been deposited by atomic layer deposition onto organic films. �

Surface and sub-surface thermal oxidation of thin ruthenium films

Energy Technology Data Exchange (ETDEWEB)

Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

2014-09-29

A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

Electrochemistry of hydrous oxide films

International Nuclear Information System (INIS)

Burke, L.D.; Lyons, M.E.G.

1986-01-01

The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

Spectrographic determination of trace impurities in reactor grade aluminium

International Nuclear Information System (INIS)

Chandola, L.C.; Machado, I.J.

1975-01-01

A spectrographic method enabling the determination of 21 trace impurities in aluminium oxide is described. The technique involves mixing the sample with graphite buffer in the ratio 1:1, loading it in a graphite electrode and arcing it for 30 sec. in a dc arc to 10 A current against a pointed graphite cathode. The spectra are photographed on Ilford N.30 emulsion employing a large quartz spectrograph. The aluminium line at 2669.2 A 0 serves as the internal standard. The impurities determined are Ag, B, Bi, Cd, Co, Cr, Cu, Fe, Ga, In, Mg, Mo, Ni, Pb, Sb, Si, Sn, Ti, V and Zn. The sensitivity varies from 5 to 100 ppm and the precision from +- 5 to +- 22% for different elements. A method for converting aluminium metal to aluminium oxide is described. It is found that boron is not lost during this conversion. (author)

Electrochromism of the electroless deposited cuprous oxide films

International Nuclear Information System (INIS)

Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

2007-01-01

Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

2008-07-01

Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

Unidirectional oxide hetero-interface thin-film diode

International Nuclear Information System (INIS)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

2015-01-01

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

Unidirectional oxide hetero-interface thin-film diode

Energy Technology Data Exchange (ETDEWEB)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

1997-11-21

The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

Institute of Scientific and Technical Information of China (English)

Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

2009-01-01

Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

Ion beam analysis of aluminium in thin layers

International Nuclear Information System (INIS)

Healy, M.J.F.; Pidduck, A.J.; Dollinger, G.; Gorgens, L.; Bergmaier, A.

2002-01-01

This work quantifies aluminium in thin surface and near surface layers. In one example, the layer overlies a thin gallium nitride layer on an aluminium oxide substrate and in a second example the aluminium exists just below the surface of an indium arsenide substrate. The technique of non-Rutherford elastic backscattering of protons was used for the samples where aluminum in the layer of interest needed to be resolved from aluminium in the sapphire substrate and the results were corroborated at the Technische Universitaet Muenchen using heavy ion elastic recoil detection analysis. In the second example, where it was unnecessary to isolate the signal of aluminium in the layer of interest (as the substrate contained no aluminium), then the 27 Al(d,p 01 ) 28 Al nuclear reaction was used. The elastic proton scattering cross section of aluminum was found to vary very rapidly over the energy range of interest

An investigation of coated aluminium bipolar plates for PEMFC

International Nuclear Information System (INIS)

Lin, Chien-Hung; Tsai, Sung-Ying

2012-01-01

Highlights: ► Coated aluminium bipolar plates demonstrate the hydrophobic property than the raw material. ► The corrosion behaviour of bipolar plate decreases the PEMFC performance severely. ► These PEMFCs are measured by current–voltage (I–V) curve test. ► The oxide film increases the interfacial contact resistance. -- Abstract: The performance of Al-alloy bipolar plates for the PEMFC (proton exchange membrane fuel cell) system is investigated in this paper. The metallic bipolar plates are modified with a Ni–P coating. The performance of the Al-alloy bipolar plates is evaluated by the coating structure, corrosion resistance, contact angle and single cell performance. The results indicate that the coated aluminium bipolar plates demonstrate hydrophobic and anti-corrosive properties. The hydrophobic property increases the contact angle on the surface from 46.08° to 80.51°. Meanwhile, the corrosion rate of the Ni–P coating can be over 1 order of magnitude lower than that of the substrate. Hence, the substrate with the coating maintains superior performance under the long term test. The present study proves that both the hydrophobicity and corrosion resistance significantly affect the metallic bipolar plate.

Effect of hydrogen on stresses in anodic oxide film on titanium

International Nuclear Information System (INIS)

Kim, Joong-Do; Pyun, Su-Il; Seo, Masahiro

2003-01-01

Stresses in anodic oxide film on titanium thin film/glass electrode in pH 8.4 borate solution were investigated by a bending beam method. The increases in compressive stress observed with cathodic potential sweeps after formation of anodic oxide film were attributed to the volume expansion due to the compositional change of anodic oxide film from TiO 2 to TiO 2-x (OH) x . The instantaneous responses of changes in stress, Δσ, in the anodic oxide film to potential steps demonstrated the reversible characteristic of the TiO 2-x (OH) x formation reaction. In contrast, the transient feature of Δσ for the titanium without anodic oxide film represented the irreversible formation of TiH x at the metal/oxide interphase. The large difference in stress between with and without the oxide film, has suggested that most of stresses generated during the hydrogen absorption/desorption reside in the anodic oxide film. A linear relationship between changes in stress, Δ(Δσ) des , and electric charge, ΔQ des , during hydrogen desorption was found from the current and stress transients, manifesting that the stress changes were crucially determined by the amount of hydrogen desorbed from the oxide film. The increasing tendency of -Δ(Δσ) des with increasing number of potential steps and film formation potential were discussed in connection with the increase in desorption amount of hydrogen in the oxide film with increasing absorption/desorption cycles and oxide film thickness

SPH based modelling of oxide and oxide film formation in gravity die castings

International Nuclear Information System (INIS)

Ellingsen, K; M'Hamdi, M; Coudert, T

2015-01-01

Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

Effect of pressurized steam on AA1050 aluminium

DEFF Research Database (Denmark)

Jariyaboon, Manthana; Møller, Per; Ambat, Rajan

2012-01-01

Purpose - The purpose of this paper is to understand the effect of pressurized steam on surface changes, structures of intermetallic particles and corrosion behavior of AA1050 aluminium. Design/methodology/approach - Industrially pure aluminium (AA1050, 99.5 per cent) surfaces were exposed...... reactivities was observed due to the formation of the compact oxide layer. Originality/value - This paper reveals a detailed investigation of how pressurized steam can affect the corrosion behaviour of AA1050 aluminium and the structure of Fe-containing intermetallic particles....

Durability of bare and anodised aluminium in atmosphere of very different corrosivities I. Bare aluminium; Durabilidad del aluminio desnudo y anodizado en atmosferas de muy diferentes corrosividades. I. Aluminio desnudo

Energy Technology Data Exchange (ETDEWEB)

Gonzalez, J. A.; Escudero, E.; Lopez, V.; Simancas, J.; Morcillo, M.

2004-07-01

The behaviour of bare aluminium is studied in atmospheric exposure at 11 natural testing stations with salinity levels ranging between 2.1 and 684 mg Cl''- m''-2 d''-1. In atmospheres of low or moderate aggressivity aluminium behaves as a passive material, though the insignificant corrosion that is produced is sufficient to spoil its appearance. In contrast, at salinity levels of 50 mg Cl''- m''-2 ''-1 or above, aluminium is susceptible to pitting corrosion even in the first year of atmospheric exposure, or in the second year at salinities of {<=} 10 mg Cl''- m''-2 d''-1. For comparative purposes, results are included for aluminium protected with an anodic film of 28 {mu}m thickness exposed at the same testing stations. A 28 {mu}m anodic film, correctly sealed, prevents the risk of localised corrosion even in the most unfavourable situations. (Author) 23 refs.

Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

OpenAIRE

Fu, Yong Qing; Luo, Jack; Nguyen, Nam-Trung; Walton, Anthony; Flewitt, Andrew; Zu, Xiao-Tao; Li, Yifan; McHale, Glen; Matthews, Allan; Iborra, Enrique; Du, Hejun; Milne, William

2017-01-01

Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN) have found a broad range of lab-on-chip applications such as biosensing, particle/cell concentrating, sorting/patterning, pumping, mixing, nebulisation and jetting. Integrated acoustic wave sensing/microfluidic devices have been fabricated by depositing these piezoelectric films onto a number of substrates such as silicon, ceramics, diamond, quartz, glass, and more recently also polymer, metallic foils a...

Formation of corrosion-resistant oxide film on uranium

International Nuclear Information System (INIS)

Petit, G.S.

1976-01-01

A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

Remelting of Aluminium by Continuous Submersion of Rolled Scrap

Energy Technology Data Exchange (ETDEWEB)

Farner, Snorre

2000-12-01

When remelting aluminium scrap, metal losses due to dross generation is a common problem. Reduction of these losses will give substantial economic and environmental benefits. Dross is generated when aluminium metal oxidizes and films of oxide envelope molten metal. When a cold metal object is immersed in a melt, the heat of the melt around this is transferred so rapidly into the object that a shell of melt often solidifies to the surface of the object. When scrap with low bulk density is charged to a melt, solidification of melt on the cold scrap prevents melt from entering the cavities in the bulk of the scrap, and the bulk density remains low. Thus the scrap tends to float on the melt surface. Submersion of this scrap is important to avoid oxidation and subsequent dross generation. One solution to this is to roll scrap to a strip and feed it into the melt. This system has been examined by studying feeding of a continuous, thin aluminium plate into molten aluminium. Also, the effect of lacquer was considered, as well as feeding the plate into a launder with melt flowing along the surface of the plate. An analytical, one-dimensional, steady-state model has been developed to describe the melting and the melting mechanisms. It is based on a shell solidifying on the plate surface and a gap introducing a thermal resistance 1/h{sub g} between the shell and the plate. The thermal resistance 1/h{sub l} of the boundary layer of the melt is included. Depending on these resistances, the initial temperature of the plate and the melt temperature, a shell will form, and the plate will penetrate a distance P into the melt before it melts away. An experimental apparatus was designed and constructed to feed aluminium plate from a coil into a melt bath at a specified velocity. The plate could be withdrawn rapidly to ''freeze'' the situation like it was below the melt surface. The penetration depth P of the plate could be measured and shell formation observed

Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

International Nuclear Information System (INIS)

Vazquez, A.L.; Carrera, R.; Arce, E.; Castillo, N.; Castillo, S.; Moran-Pineda, M.

2009-01-01

Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O 2 /He oxidizing conditions (Praxair, 2.0% O 2 /He balance). According to the results, the samples that presented higher activities than those in Al 2 O 3 /Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al 2 O 3 /Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

Energy Technology Data Exchange (ETDEWEB)

Vazquez, A.L., E-mail: avazquezd@ipn.m [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Carrera, R. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Arce, E. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Castillo, N. [CINVESTAV, Departamento de Fisica. Av. IPN 2508, 07360, Mexico, D.F (Mexico); Castillo, S. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Moran-Pineda, M. [Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico)

2009-08-26

Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O{sub 2}/He oxidizing conditions (Praxair, 2.0% O{sub 2}/He balance). According to the results, the samples that presented higher activities than those in Al{sub 2}O{sub 3}/Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al{sub 2}O{sub 3}/Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

International Nuclear Information System (INIS)

Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

2014-01-01

This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

Synthesis and electrical characterization of Graphene Oxide films

International Nuclear Information System (INIS)

Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

2015-01-01

In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

Development of solar selective absorber layers on aluminium. Final report; Entwicklung solarselektiver Absorberschichten auf Aluminium fuer Solarkollektoren. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Hoenicke, D.; Moeller, T.; Schwarz, T.

1998-01-31

A new electrolytic process was developed to form solar selective layers on aluminium. In the developed process, both the formation of the alumina layer and the deposition of metals into the layer takes place in only one treatment step using a single electrolysis bath. The main step of the so called ISOC-method (impulse structured oxide ceramic) is the anodic oxidation of aluminium which was carried out by using a pulse technique at different voltages. During the anodic polarisation a thin alumina ceramic layer was formed, while the cathodic led to the metal deposition as copper and nickel. The conditions of the electrolysis were varied in order to estimate optimal parameters achieving solar selective layers with high selectivity. Furthermore, a scale-up of the lab scale apparatus to a mini plant was carried out. Finally, the corrosion resistance of the absorber layers was improved by the formation of a thin hydrophobic overlayer using a sol-gel treatment. (orig.) [Deutsch] Ein neuartiges Behandlungsverfahren zur Erzeugung von solarselektiven Absorberschichten auf Aluminium wurde entwickelt. Bei dieser elektrochemischen Behandlung wird in einem Einstufenprozess mit einem Elektrolyten durch eine Kombination von anodischer Oxidation und bipolarer Pulsbehandlung auf der Oberflaeche des Aluminiums eine impulsstrukturierte Oxidkeramik (ISOK) erzeugt. Dabei entsteht durch eine anodische Oxidation eine strukturierte Aluminiumoxidschicht. Bei der bipolaren Pulsbehandlung erfolgt dann eine Abscheidung der im ISOK-Elektrolyten befindlichen Metalle Cu und Ni auf oder in die Aluminiumoxidoberflaeche. Die ISOK-Behandlung wurde vom Labormassstab zu einem ISOK-Verfahren im Miniplant-Massstab entwickelt. Der Einfluss der elektrischen Parameter und der chemischen Zusammensetzung der ISOK-Elektrolyte wurde untersucht. Durch eine auf das ISOK-Verfahren abgestimmte Nachbehandlung, ein Tauchverfahren in einer Sol-Gel-Loesung, entsteht ein Schichtsystem mit hoher Solarselektivitaet

Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

International Nuclear Information System (INIS)

Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

2016-01-01

We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

Investigations into the corrosion resistance of copper aluminium alloys. Effect of phosphorus as corrosion resistant third alloying element in the ternary system CuAl20P1

International Nuclear Information System (INIS)

Allwardt, A.

1997-01-01

The effect of phosphorus on the corrosion resistance of Al-bronzes is studied in detail in this work. A literature review showed that there are a lot of things known about the microstructure and the mechanical properties of Al-bronzes. In spite of their corrosion resistance the corrosion properties and the structure of the protective oxide films of Al-bronzes were seldom a matter of interest. Systematic studies of the influence of different alloying elements on the oxide film and the corrosion properties are rare. Therefore, it is not possible to predict the corrosion resistance of Al-bronzes, made by alloying particular elements. The high corrosion resistance of the new alloy CuAl 20 P 1 was the reason to investigate the influence of phosphorus on the corrosion properties of Al-bronzes in more detail. A systematic study of the microstructure and the corrosion properties of Cu, CuP x , CuAl 20 and CuAl 20 P x offers an insight into the effect of aluminium and phosphorus on the formation of the oxide film on Al-bronzes. It was found that there exists a critical amount of 1 at.-% of phosphorus. Above and below this amount the corrosion resistance becomes worse. This behaviour could be explained by XPS-and electrochemical measurements. Although there are still some questions about the influence of phosphorus on the corrosion resistance of Al-bronzes, this work has produced some important results, which in the future may be helpful to develop new high corrosion resistant Al-bronzes more efficiently: - on clean surface Al-bronze, the oxidation of Al and Cu takes place simultaneously, - Al promotes the formation of Cu 2 O but impedes the formation of Cu(II)-oxide/-hydride in neutral solutions, - P impedes the formation of Cu 2 O and as a consequence promotes the formation of aluminium oxide. This results in a higher amount of Al in the oxide film on the surface of the alloy, which leads to a better corrosion resistance. (author) figs., tabs., 106 refs

Lactobacillus plantarum CCFM639 alleviates aluminium toxicity.

Science.gov (United States)

Yu, Leilei; Zhai, Qixiao; Liu, Xiaoming; Wang, Gang; Zhang, Qiuxiang; Zhao, Jianxin; Narbad, Arjan; Zhang, Hao; Tian, Fengwei; Chen, Wei

2016-02-01

Aluminium (Al) is the most abundant metal in the earth's crust. Al exposure can cause a variety of adverse physiological effects in humans and animals. Our aim was to demonstrate that specific probiotic bacteria can play a special physiologically functional role in protection against Al toxicity in mice. Thirty strains of lactic acid bacteria (LAB) were tested for their aluminium-binding ability, aluminium tolerance, their antioxidative capacity, and their ability to survive the exposure to artificial gastrointestinal (GI) juices. Lactobacillus plantarum CCFM639 was selected for animal experiments because of its excellent performance in vitro. Forty mice were divided into four groups: control, Al only, Al plus CCFM639, and Al plus deferiprone (DFP). CCFM639 was administered at 10(9) CFU once daily for 10 days, followed by a single oral dose of aluminium chloride hexahydrate at 5.14 mg aluminium (LD50) for each mouse. The results showed that CCFM639 treatment led to a significant reduction in the mortality rates with corresponding decrease in intestinal aluminium absorption and in accumulation of aluminium in the tissues and amelioration of hepatic histopathological damage. This probiotic treatment also resulted in alleviation of hepatic, renal, and cerebral oxidative stress. The treatment of L. plantarum CCFM639 has potential as a therapeutic dietary strategy against acute aluminium toxicity.

Ultraviolet sensing properties of polyvinyl alcohol-coated aluminium ...

Indian Academy of Sciences (India)

Electrochemical; aluminium-doped zinc oxide; PVA-coated; UV sensing. 1. Introduction ... Metal oxides having good optical and structural proper- ties also require good .... close to the calculated defect level due to zinc interstitial. PL spectra of ...

Thermal oxidation of Ni films for p-type thin-film transistors

KAUST Repository

Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

2013-01-01

p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

Mn-implanted, polycrystalline indium tin oxide and indium oxide films

International Nuclear Information System (INIS)

Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

2009-01-01

Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

A Macroporous TiO2 Oxygen Sensor Fabricated Using Anodic Aluminium Oxide as an Etching Mask

Directory of Open Access Journals (Sweden)

Sheng-Po Wu

2010-01-01

Full Text Available An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE processes, a homogeneous and macroporous silicon surface can be effectively configured by modulating AAO process parameters and alumina film thickness, thus hopefully replacing conventional photolithography and electrochemical etch methods. The hybrid process integration is considered fully CMOS compatible thanks to the low-temperature AAO and CMOS processes. The gas-sensing characteristics of 50 nm TiO2 nanofilms deposited on the macroporous surface are compared with those of conventional plain (or non-porous nanofilms to verify reduced response noise and improved sensitivity as a result of their macroporosity. Our experimental results reveal that macroporous geometry of the TiO2 chemoresistive gas sensor demonstrates 2-fold higher (~33% improved sensitivity than a non-porous sensor at different levels of oxygen exposure. In addition, the macroporous device exhibits excellent discrimination capability and significantly lessened response noise at 500 °C. Experimental results indicate that the hybrid process of such miniature and macroporous devices are compatible as well as applicable to integrated next generation bio-chemical sensors.

Nuclear microanalysis of oxide films on structural steel

International Nuclear Information System (INIS)

Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

1989-01-01

Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

Films based on oxidized starch and cellulose from barley.

Science.gov (United States)

El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

2015-11-20

Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

Cyclic oxidation of stainless steel ferritic AISI 409, AISI 439 and AISI 441

International Nuclear Information System (INIS)

Salgado, Maria de Fatima; Santos, Diego Machado dos; Oliveira, Givanilson Brito de; Lins, Vanessa de Freitas Cunha

2014-01-01

Stainless steels have many industrial applications. The cyclic oxidation of ferritic stainless steels technical and scientific importance presents, because they are less susceptible to peeling the austenitic alloys. For the purpose of investigating the behavior of these steels under thermal cycling, cyclic oxidation of AISI 409, AISI 441 and AISI 439 was carried out in a tubular furnace under two different conditions: oxidation by dipping the steel in the synthetic condensate for 10h and without oxidation immersion in the condensate, for up to 1500h at 300° C temperature. Using techniques: SEM, EDS and XRD revealed a microstructure with increased oxidation in the samples were immersed in the condensate. The oxide film remained intact during oxidation for steels 439 and 441 409 The Steel immersed in the condensate was rupture of the film after the 20th cycle of oxidation. The chemical characterization of the films allowed the identification of elements: Chromium, Iron, Aluminium and Silicon To a great extent, Cr_2O_3. (author)

Monodispersed macroporous architecture of nickel-oxide film as an anode material for thin-film lithium-ion batteries

International Nuclear Information System (INIS)

Wu, Mao-Sung; Lin, Ya-Ping

2011-01-01

A nickel-oxide film with monodispersed open macropores was prepared on a stainless-steel substrate by electrophoretic deposition of a polystyrene-sphere monolayer followed by anodic electrodeposition of nickel oxy-hydroxide. The deposited films convert to cubic nickel oxide after annealing at 400 o C for 1 h. Galvanostatic charge and discharge results indicate that the nickel-oxide film with monodispersed open macropores is capable of delivering a higher capacity than the bare nickel-oxide film, especially in high-rate charge and discharge processes. The lithiation capacity of macroporous nickel oxide reaches 1620 mA h g -1 at 1 C current discharge and decreases to 990 mA h g -1 at 15 C current discharge. The presence of monodispersed open macropores in the nickel-oxide film might facilitate the electrolyte penetration, diffusion, and migration. Electrochemical reactions between nickel oxide and lithium ions are therefore markedly improved by this tailored film architecture.

Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

Energy Technology Data Exchange (ETDEWEB)

Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

2016-07-29

Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

Effect of microcrystallization on pitting corrosion of pure aluminium

International Nuclear Information System (INIS)

Meng Guozhe; Wei Liyan; Zhang Tao; Shao Yawei; Wang Fuhui; Dong Chaofang; Li Xiaogang

2009-01-01

A microcrystalline aluminium film with grain size of about 400 nm was prepared by magnetron sputtering technique. Its corrosion behaviour was investigated in NaCl containing acidic solution by means of potentiodynamic polarization curves and electrochemical noise (EN). The polarization results indicated that the corrosion potential of the sample shifted towards more positive direction, while its corrosion current density decreased compared with that of pure coarse-grain Al. The EN analysis based on stochastic model demonstrated that there existed two kinds of effect of microcrystallization on the pitting behaviour of pure aluminium: (1) the rate of pit initiation is accelerated, (2) the pit growth process was impeded. This leads to the enhancement of pitting resistance for the microcrystallized aluminium.

Kinetics and thermodynamics of aluminium dissolution in 1.0M sulphuric acid containing chloride ions

Energy Technology Data Exchange (ETDEWEB)

Abdel-Gaber, A.M. [Department of Chemistry, Faculty of Science, Alexandria University, P.O. Box 426, Ibrahimia, Alexandria 21321 (Egypt)]. E-mail: ashrafmoustafa@yahoo.com; Abd-El-Nabey, B.A. [Department of Chemistry, Faculty of Science, Alexandria University, P.O. Box 426, Ibrahimia, Alexandria 21321 (Egypt); Sidahmed, I.M. [Department of Chemistry, Faculty of Science, Alexandria University, P.O. Box 426, Ibrahimia, Alexandria 21321 (Egypt); El-Zayady, A.M. [Department of Chemistry, Faculty of Science, Alexandria University, P.O. Box 426, Ibrahimia, Alexandria 21321 (Egypt); Saadawy, M. [Department of Chemistry, Faculty of Science, Alexandria University, P.O. Box 426, Ibrahimia, Alexandria 21321 (Egypt)

2006-08-01

The dissolution of aluminium in 1M sulphuric acid solutions containing different chloride ion concentrations (0.01-0.06M) were studied at 25, 30, 35 and 40deg. C using electrochemical impedance spectroscopy (EIS) technique and polarization curves measurements. The kinetic rate equation, under the experimental condition described, was derived and found to verify the following relationship:V=k{sub obs}K{sub 2}C{sub Cl{sup -}}{sup n}1+K{sub 2}C{sub Cl{sup -}}{sup n}where V is the corrosion rate, k{sub obs} and K{sub 2} are the dissolution rate constant of aluminium oxide-chloride complex and the equilibrium constant of chloride ions adsorbed at aluminium oxide surface, respectively. The kinetic and thermodynamic energy parameters were calculated and their values indicate that chloride ions are chemisorbed onto the aluminium oxide surface and the formation of oxide-chloride complex is the rate-determining step.

Preparation of molybdenum oxide thin films by MOCVD

International Nuclear Information System (INIS)

Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

2007-01-01

In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

Preparation of molybdenum oxide thin films by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

2007-05-31

In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

Characterisation of oxidised aluminium powder: Validation of a new anodic oxidation bench

Energy Technology Data Exchange (ETDEWEB)

Gascoin, Nicolas, E-mail: Nicolas.Gascoin@univ-orleans.fr [PRISME Institute, Orleans University, 63 avenue de Lattre de Tassigny, 18020 Bourges (France); Gillard, Philippe; Baudry, Guillaume [PRISME Institute, Orleans University, 63 avenue de Lattre de Tassigny, 18020 Bourges (France)

2009-11-15

Aluminium powder is of major interest in many applications but it presents a risk due to its high explosibility, particularly when dispersed in air. The safety is directly linked to the particles oxidation because the Minimum Ignition Energy (MIE), which is required to initiate an Al dust explosion, increases with the oxide layer thickness. This study provides a controlled method to furnish reproducible homogeneous set of powder for such safety studies. Thanks to a new experimental bench, the influence on the oxidation rate of seven treatment parameters is investigated (current density, time of treatment, acid concentration, mass of powder, particles size, stirring, neutralisation by ammonia solution). The oxide content is plotted versus the current density, the time and the acid concentration to provide reference curves for further elaboration of oxidised powder. The particles size of sieved powder is measured before and after treatment by different methods (optical and Scanning Electron Microscopes, laser measurement). A high refinement of the powder in terms of size distribution is achieved thanks to the employed sieving. The present bench and the elaborated procedure are of great interest to provide well-calibrated oxidised powder directly available for safety studies. The time must be adjusted, depending on the wanted oxide content - from 2 to 18 wt.% - and the other treatment parameters must be kept constant: acid concentration (5 wt.%), current density (1 A dm{sup -2}), treated powder (20 g). In these conditions, the ratio of the oxide layer thickness on the particles diameter is found to be constant for a given oxide content whatever the particles size.

Characterisation of oxidised aluminium powder: Validation of a new anodic oxidation bench

International Nuclear Information System (INIS)

Gascoin, Nicolas; Gillard, Philippe; Baudry, Guillaume

2009-01-01

Aluminium powder is of major interest in many applications but it presents a risk due to its high explosibility, particularly when dispersed in air. The safety is directly linked to the particles oxidation because the Minimum Ignition Energy (MIE), which is required to initiate an Al dust explosion, increases with the oxide layer thickness. This study provides a controlled method to furnish reproducible homogeneous set of powder for such safety studies. Thanks to a new experimental bench, the influence on the oxidation rate of seven treatment parameters is investigated (current density, time of treatment, acid concentration, mass of powder, particles size, stirring, neutralisation by ammonia solution). The oxide content is plotted versus the current density, the time and the acid concentration to provide reference curves for further elaboration of oxidised powder. The particles size of sieved powder is measured before and after treatment by different methods (optical and Scanning Electron Microscopes, laser measurement). A high refinement of the powder in terms of size distribution is achieved thanks to the employed sieving. The present bench and the elaborated procedure are of great interest to provide well-calibrated oxidised powder directly available for safety studies. The time must be adjusted, depending on the wanted oxide content - from 2 to 18 wt.% - and the other treatment parameters must be kept constant: acid concentration (5 wt.%), current density (1 A dm -2 ), treated powder (20 g). In these conditions, the ratio of the oxide layer thickness on the particles diameter is found to be constant for a given oxide content whatever the particles size.

Photoconductivity of oxidized nanostructured PbTe(In) films

International Nuclear Information System (INIS)

Dobrovolsky, A A; Ryabova, L I; Khokhlov, D R; Dashevsky, Z M; Kasiyan, V A

2009-01-01

Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2–300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature

Development of microstructure during sintering and aluminium exposure of titanium diboride ceramics

Energy Technology Data Exchange (ETDEWEB)

Pettersen, Gunnar

1997-12-31

In the production of aluminium, much less energy need be consumed if an inert, wetted cathode is present in the electrolysis cell. Titanium diboride, TiB{sub 2}, is easily wetted and does not readily dissolve in liquid aluminium, but it degrades, probably because aluminium penetrates into it during electrolysis. This degradation is linked to impurities present in the TiB{sub 2} after sintering. This thesis studies the sintering process and how aluminium penetrates into the material. High-purity, high-density TiB{sub 2} compacts were made by hot pressing at 50 MPa in an argon atmosphere at 1790-1960 {sup o}C. Samples were made with different impurity additions. These samples were exposed to liquid aluminium at 980 {sup o}C for 24 hours. All samples were penetrated, but the amount and appearance depended on the sintering aid used. Unlike the other samples, pure TiB{sub 2} was easily penetrated by metallic aluminium because of the open porosity and microcracks of this material. Grain boundary penetration was common among the samples. Differences in penetration behaviour between grain boundaries are probably due to differences in grain boundary energy. But no relation to segregants or boundary misorientation was found. The orientation of grain boundary planes and de-wetting of thin films upon cooling may explain the observed microstructure development. The samples sintered with Ti addition suffered extensive penetration despite their high densities. The grain boundaries of these samples became faceted and contained thicker films of metallic aluminium, presumably because of increased solubility due to iron segregations. All secondary phases present in the grain junctions after sintering, except from the B{sub 4}C phase, reacted with the penetrated aluminium. This did not cause swelling and cracking, as has been suggested by other authors. 101 refs., 48 figs., 7 tabs.

Chemically abrupt interface between Ce oxide and Fe films

International Nuclear Information System (INIS)

Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

2005-01-01

A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

COMBINED ALUMINIUM SULFATE/HYDROXIDE PROCESS FOR ...

African Journals Online (AJOL)

sulfate, and used for fluoride removal from water by combining with Nalgonda Technique. ... effects on human health and could result in fluorosis. ... [23], nanoscale aluminium oxide hydroxide (AlOOH) [24] and natural zeolite [25], were among.

Degradation of superconducting Nb/NbN films by atmospheric oxidation

Energy Technology Data Exchange (ETDEWEB)

Henry, Michael David; Wolfley, Steven L.; Young, Travis Ryan; Monson, Todd; Pearce, Charles Joseph; Lewis, Rupert M.; Clark, Blythe; Brunke, Lyle Brent; Missert, Nancy A.

2017-03-01

Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. As a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.

Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

International Nuclear Information System (INIS)

Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

2002-01-01

Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

Raman and XPS characterization of vanadium oxide thin films with temperature

Energy Technology Data Exchange (ETDEWEB)

Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

2017-05-01

Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

Water clustering on nanostructured iron oxide films

DEFF Research Database (Denmark)

Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

2014-01-01

, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

Controlling the anodizing conditions in preparation of an nanoporous anodic aluminium oxide template

Science.gov (United States)

Nazemi, Azadeh; Abolfazl, Seyed; Sadjadi, Seyed

2014-12-01

Porous anodic aluminium oxide (AAO) template is commonly used in the synthesis of one-dimensional nanostructures, such as nanowires and nanorods, due to its simple fabrication process. Controlling the anodizing conditions is important because of their direct influence on the size of AAO template pores; it affects the size of nanostructures that are fabricated in AAO template. In present study, several alumina templates were fabricated by a two-step electrochemical anodization in different conditions, such as the time of first process, its voltage, and electrolyte concentration. The effect of these factors on pore diameters of AAO templates was investigated using scanning electron microscopy (SEM).

Thick-film effects in the oxidation and hydriding of zirconium alloys

International Nuclear Information System (INIS)

Johnson, A.B. Jr.

1989-08-01

One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

International Nuclear Information System (INIS)

Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

2006-01-01

Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

Oxygen–induced barrier height changes in aluminium – amorphous ...

African Journals Online (AJOL)

Se) films by exposing the samples to oxygen before the aluminium contacts were deposited. Current – voltage (I-V) measurements were carried out on the samples. The results show that the application of voltage causes charge exchange ...

Sputtered indium oxide films

International Nuclear Information System (INIS)

Gillery, F.H.

1986-01-01

A method is described for depositing on a substrate multiple layer films comprising at least one primary layer of a metal oxide and at least one primary layer of a metal other than the metal of the oxide layer. The improvement described here comprises improving the adhesion between the metal oxide and metal layers by depositing between the layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers. An article of manufacture is described comprising a nonmetallic substrate, and deposited thereon in any order: a. at least one coating layer of metal; b. at least one coating layer of an oxide of a metal other than the metal of the metal layer; and c. deposited between the metal and metal oxide layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers

Oxide film assisted dopant diffusion in silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

2010-10-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Oxide film assisted dopant diffusion in silicon carbide

International Nuclear Information System (INIS)

Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

2010-01-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Monte Carlo simulation of electron depth distribution and backscattering for carbon films deposited on aluminium as a function of incidence angle and primary energy

Science.gov (United States)

Dapor, Maurizio

2005-01-01

Carbon films are deposited on various substrates (polymers, polyester fabrics, polyester yarns, metal alloys) both for experimental and technological motivations (medical devices, biocompatible coatings, food package and so on). Computational studies of the penetration of electron beams in supported thin film of carbon are very useful in order to compare the simulated results with analytical techniques data (obtained by scanning electron microscopy and/or Auger electron spectroscopy) and investigate the film characteristics. In the present paper, the few keV electron depth distribution and backscattering coefficient for the special case of film of carbon deposited on aluminium are investigated, by a Monte Carlo simulation, as a function of the incidence angle and primary electron energy. The simulated results can be used as a way to evaluate the carbon film thickness by a set of measurements of the backscattering coefficient.

Quercetin protects against aluminium induced oxidative stress and promotes mitochondrial biogenesis via activation of the PGC-1α signaling pathway.

Science.gov (United States)

Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Verma, Deepika; Priyanka, Kumari; Bal, Amanjit; Gill, Kiran Dip

2015-12-01

The present investigation was carried out to elucidate a possible molecular mechanism related to the protective effect of quercetin administration against aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of PGC-1α and its downstream targets, i.e. NRF-1, NRF-2 and Tfam in mitochondrial biogenesis. Aluminium lactate (10mg/kg b.wt./day) was administered intragastrically to rats, which were pre-treated with quercetin 6h before aluminium (10mg/kg b.wt./day, intragastrically) for 12 weeks. We found a decrease in ROS levels, mitochondrial DNA oxidation and citrate synthase activity in the hippocampus (HC) and corpus striatum (CS) regions of rat brain treated with quercetin. Besides this an increase in the mRNA levels of the mitochondrial encoded subunits - ND1, ND2, ND3, Cyt b, COX1, COX3 and ATPase6 along with increased expression of nuclear encoded subunits COX4, COX5A and COX5B of electron transport chain (ETC). In quercetin treated group an increase in the mitochondrial DNA copy number and mitochondrial content in both the regions of rat brain was observed. The PGC-1α was up regulated in quercetin treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α. Electron microscopy results revealed a significant decrease in the mitochondrial cross-section area, mitochondrial perimeter length and increase in mitochondrial number in case of quercetin treated rats as compared to aluminium treated ones. Therefore it seems quercetin increases mitochondrial biogenesis and makes it an almost ideal flavanoid to control or limit the damage that has been associated with the defective mitochondrial function seen in many neurodegenerative diseases. Copyright © 2015 Elsevier Inc. All rights reserved.

Measurement of ablation threshold of oxide-film-coated aluminium nanoparticles irradiated by femtosecond laser pulses

International Nuclear Information System (INIS)

Chefonov, O V; Ovchinnikov, A V; Il'ina, I V; Agranat, M B

2016-01-01

We report the results of experiments on estimation of femtosecond laser threshold intensity at which nanoparticles are removed from the substrate surface. The studies are performed with nanoparticles obtained by femtosecond laser ablation of pure aluminium in distilled water. The attenuation (or extinction, i.e. absorption and scattering) spectra of nanoparticles are measured at room temperature in the UV and optical wavelength ranges. The size of nanoparticles is determined using atomic force microscopy. A new method of scanning photoluminescence is proposed to evaluate the threshold of nanoparticle removal from the surface of a glass substrate exposed to IR femtosecond laser pulses with intensities 10 11 – 10 13 W cm -2 . (interaction of laser radiation with matter)

Investigation of Al{sub 2}O{sub 3} barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

Energy Technology Data Exchange (ETDEWEB)

Maindron, Tony; Aventurier, Bernard [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Ghazouani, Ahlem; Jullien, Tony [LETI/DTSI/SDEP/Laboratoire Dépôt Equipe 2, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Rochat, Névine [LETI/DTSI/Service de Caractérisation des Matériaux et Composants, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France); Simon, Jean-Yves; Viasnoff, Emilie [LETI/DOPT/SCOOP/Laboratoire des Composants pour la Visualisation, CEA-LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9 (France)

2013-12-02

Al{sub 2}O{sub 3} films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ{sub 3}) films made onto silicon wafers. It has been found that a thick ALD-deposited Al{sub 2}O{sub 3} layer (> 11 nm) greatly prevents the photo-oxidation of AlQ{sub 3} films when exposed to continuous UV irradiation (350 mW/cm{sup 2}). Thin Al{sub 2}O{sub 3} thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al{sub 2}O{sub 3} layer have been easily observed as non-fluorescent AlQ{sub 3} singularities, or black spots, under UV light on the system Si/AlQ{sub 3}/Al{sub 2}O{sub 3} stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h{sup −1}·cm{sup −2} and 0.243 h{sup −1}·cm{sup −2} respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO{sub 2} onto the Si/AlQ{sub 3}/Al{sub 2}O{sub 3} sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h{sup −1}·cm{sup −2} and 0.04 h{sup −1}·cm{sup −2} respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al{sub 2}O{sub 3} films and confirm the general idea that a single Al{sub 2}O{sub 3} ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an

Thin films deposited by laser ablation for the measurement of the ionizing and non-ionizing radiation

International Nuclear Information System (INIS)

Villarreal B, J.E.; Escobar A, L.; Camps, E.; Romero, S.; Gonzalez, P.; Salinas, B.

2001-01-01

In this work the obtained results to synthesize thin films of amorphous carbon with incorporated nitrogen and hydrogen are presented, as well as thin films of aluminium oxide using the laser ablation technique. The thin films were exposed to ionizing radiation (gamma rays of a 60 Co source, beta radiation of a 90 Sr source) and a non-ionizing radiation (UV radiation). The obtained results show that it is possible to obtain materials in thin film form with thickness of hundreds of nanometers, which present thermoluminescent response when being irradiated with ionizing radiation and non-ionizing radiation. (Author)

Aluminium and Gamma Irradiation Induced Oxidative Damage in Brain Tissue of Male Rats - Protective Role of Ferulic Acid

International Nuclear Information System (INIS)

Mansour, S.Z.; Hanafi, N.; Noaman, E.

2011-01-01

The current study was carried out to investigate the potential role of ferulic acid (FA) against Aluminium chloride (AlCl 3 ), γ- radiation either alone or combination induced oxidative stress in brain tissue of Wistar rats. The period of the experiment was eight weeks. Animals were administrated by aluminium chloride at a dose of 8.5 mg/kg/day and exposed to a single dose (4 Gy) of γ-radiation. FA was administered orally (50 mg/Kg body weight)/day. Histopathological observations and myeloid protein distribution were recorded in brain tissue. Induction of oxidative stress was recorded after all exposures. Brain tissue of AlCl 3 and γ- irradiation treatments either alone or combined revealed many altered changes and myeloid protein distribution. Also a decrease in serotonin concentration was recorded. An increase in Malonaldialdahyde (MDA) and acetylcholinesterase activity and percentage of saturated fatty acids in plasma and brain tissue was recorded. Reduced glutathione (GSH), catalase (CAT), superoxide dismutase (SOD) in blood and brain showed a significant decrease. Treatment of AlCl 3 loaded animals by FA showed simple atrophy as shrunken morphology saw in amyotrophic lateral sclerosis and a decrease in myeloid protein deposition. FA treatment of AlCl 3 loaded or irradiated animals represented a significant increase in serotonin concentration and ameliorated affects on oxidative stress markers, acetylcholinesterase activity and percentage of saturated fatty acids in plasma and brain tissue. In conclusion FA has a role in reducing the oxidative stress of AlCl 3 and γ- irradiation on brain tissue of rats

Lithium insertion in sputtered vanadium oxide film

DEFF Research Database (Denmark)

West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

1992-01-01

were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

Science.gov (United States)

Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

2013-09-01

Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

International Nuclear Information System (INIS)

Goubard, F.; Vidal, F.; Bazzi, R.; Tillement, O.; Chevrot, C.; Teyssie, D.

2007-01-01

In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd 2 O 3 . These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films

Effects of Aluminium on Rat Brain Mitochondria Bioenergetics: an In vitro and In vivo Study.

Science.gov (United States)

Iglesias-González, Javier; Sánchez-Iglesias, Sofía; Beiras-Iglesias, Andrés; Méndez-Álvarez, Estefanía; Soto-Otero, Ramón

2017-01-01

Numerous studies have highlighted the potential of aluminium as an aetiological factor for some neurodegenerative disorders, particularly Alzheimer's disease and Parkinson's disease. Our previous studies have shown that aluminium can cause oxidative stress, reduce the activity of some antioxidant enzymes, and enhance the dopaminergic neurodegeneration induced by 6-hydroxydopamine in an experimental model of Parkinson's disease in rats. We now report a study on the effects caused by aluminium on mitochondrial bioenergetics following aluminium addition and after its chronic administration to rats. To develop our study, we used a high-resolution respirometry to test the mitochondrial respiratory capacities under the conditions of coupling, uncoupling, and non-coupling. Our study showed alterations in leakiness, a reduction in the maximum capacity of complex II-linked respiratory pathway, a decline in the respiration efficiency, and a decrease in the activities of complexes III and V in both models studied. The observed effects also included both an alteration in mitochondrial transmembrane potential and a decrease in oxidative phosphorylation capacity when relatively high concentrations of aluminium were added to the isolated mitochondria. These findings contribute to explain both the ability of aluminium to generate oxidative stress and its suggested potential to act as an etiological factor by promoting the progression of neurodegenerative disorders such as Parkinson's disease.

Surface and sub-surface thermal oxidation of thin ruthenium films

NARCIS (Netherlands)

Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

2014-01-01

A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

Electrochemical characterization of oxide film formed at high temperature on Alloy 690

Energy Technology Data Exchange (ETDEWEB)

Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

2012-02-15

Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

Sinterability and conductivity of barium doped aluminium lanthanum oxyapatite La{sub 9.5}Ba{sub 0.5}Si{sub 5.5}Al{sub 0.5}O{sub 26.5} electrolyte of solid oxide fuel cells

Energy Technology Data Exchange (ETDEWEB)

Cao Xiaoguo [Faculty of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong (China); Jiang Sanping, E-mail: s.jiang@curtin.edu.au [Fuels and Energy Technology Institute and Department of Chemical Engineering, Curtin University, Perth, WA 6102 (Australia)

2012-05-15

Highlights: Black-Right-Pointing-Pointer Ba doping enhances the sintering and densification properties of aluminium lanthanum apatite. Black-Right-Pointing-Pointer Ba doping improves the oxide conductivity of aluminium lanthanum apatite. Black-Right-Pointing-Pointer The enhancement of Ba doping is mainly due to the significantly reduced grain boundary resistance of the aluminium lanthanum apatite. - Abstract: Apatite ceramics are interesting alternative solid oxide fuel cells (SOFCs) electrolytes because of their open structure for the transportation of oxide ions and their good chemical stability. This study reports the influence of barium doping on the microstructure, sinterability and oxide conductivity properties of the aluminium lanthanum oxyapatite La{sub 9.5}Ba{sub 0.5}Si{sub 5.5}Al{sub 0.5}O{sub 26.5}. SEM results show that lanthanum substitution with barium improves the sinterability of apatite ceramics. The barium doping also enhances the conductivity of the aluminium lanthanum silicates. The oxygen ion conductivity of La{sub 9.5}Ba{sub 0.5}Si{sub 5.5}Al{sub 0.5}O{sub 26.5} sintered at 1600 Degree-Sign C is 2.21 Multiplication-Sign 10{sup -2} S cm{sup -1} at 800 Degree-Sign C, higher than 9.81 Multiplication-Sign 10{sup -3} S cm{sup -1} of La{sub 10}Si{sub 5}AlO{sub 26.5} sample prepared under the same conditions. The results in the present study demonstrate that doping Ba on the La site for aluminium lanthanum oxyapatite reduces the sintering temperature and improves the ion conductivity. The enhancement of Ba dopant is mainly on the improvement of the densification and thus substantially reduced grain boundary resistance of aluminium lanthanum oxyapatite particularly at low temperatures.

Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

International Nuclear Information System (INIS)

Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

2015-01-01

The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

Directory of Open Access Journals (Sweden)

D. Santos-Cruz

Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

Directory of Open Access Journals (Sweden)

Ma Jin

2016-01-01

Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

Reduction of uranium and plutonium oxides by aluminum. Application to the recycling of plutonium; Reduction des oxydes d'uranium et de plutonium par l'aluminium application au recyclage du plutonium

Energy Technology Data Exchange (ETDEWEB)

Gallay, J [Commissariat a l' Energie Atomique, Valduc (France). Centre d' Etudes

1968-07-01

A process for treating plutonium oxide calcined at high temperatures (1000 to 2000 deg. C) with a view to recovering the metal consists in the reduction of this oxide dissolved in a mixture of aluminium, sodium and calcium fluorides by aluminium at about 1180 deg. C. The first part of the report presents the results of reduction tests carried out on the uranium oxides UO{sub 2} and U{sub 3}O{sub 8}; these are in agreement with the thermodynamic calculations of the exchange reaction at equilibrium. The second part describes the application of this method to plutonium oxides. The Pu-Al alloy obtained (60 per cent Pu) is then recycled in an aqueous medium. (author) [French] Un procede de traitement de l'oxyde de plutonium calcine a haute temperature (1000 deg. C a 2000 deg. C), en vue de la recuperation du metal, consiste a reduire cet oxyde dissous dans un melange de fluorures d'aluminium, de sodium et de calcium, par l'aluminium vers 1180 deg. C. Une premiere partie du rapport presente les resultats des essais de reduction des oxydes d'uranium UO{sub 2} et U{sub 3}O{sub 8}, en accord avec les resultats du calcul thermodynamique de la reaction d'echange a l'equilibre. Une seconde partie rend compte de l'application de cette methode a l'oxyde de plutonium. L'alliage Pu-Al obtenu (60 pour cent Pu) est ensuite recycle par voie aqueuse. (auteur)

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

Production and study of mixed Al-Al2O3 thin films for passive electronic circuits

International Nuclear Information System (INIS)

Pruniaux, B.

1966-09-01

A new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al 2 O 3 cermet resistors (R □ = 10000 Ω □ , CTR 2 O 3 capacitors (C □ = 60000 pf/cm 2 , tg δ [fr

Influence of oxidation state on the pH dependence of hydrous iridium oxide films

International Nuclear Information System (INIS)

Steegstra, Patrick; Ahlberg, Elisabet

2012-01-01

Many electrochemical reactions taking place in aqueous solution consume or produce protons. The pH in the diffusion layer can therefore be significantly altered during the reaction and there is a need for in situ pH measurements tracing this near surface pH. In the present paper the rotating ring disc technique was used to measure near surface pH changes during oxygen reduction, utilising hydrous iridium oxide as the pH sensing probe. Before such experiments a good understanding of the pH sensing properties of these films is required and the impact of the oxidation state of the film on the pH sensing properties was investigated as well as the influence of solution redox species. The pH sensitivity (depicted by dE/dpH) was found to depend on the average oxidation state of the film in a manner resembling the cyclic voltammetry response. In all cases the pH response is “supernernstian” with more than one proton per electron. The origin of this behaviour is discussed in the context of acid-base properties of the film and the existence of both hydrous and anhydrous oxide phases. The pH response depends also on the redox properties of the solution but can be optimised for various purposes by conditioning the film at different potentials. This was clearly illustrated by adding hydrogen peroxide, an intermediate in the oxygen reduction reaction, to the solution. It was shown that hydrous iridium oxide can be used as a reliable in situ pH sensor provided that care is taken to optimise the oxidation state of the film.

The role of polymer films on the oxidation of magnetite nanoparticles

Science.gov (United States)

Letti, C. J.; Paterno, L. G.; Pereira-da-Silva, M. A.; Morais, P. C.; Soler, M. A. G.

2017-02-01

A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe3O4-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe3O4-np/PSS)n with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe3O4-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe3O4-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe3O4-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite.

Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

NARCIS (Netherlands)

Coloma Ribera, R.

2017-01-01

This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

The role of polymer films on the oxidation of magnetite nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Letti, C.J. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Paterno, L.G. [Universidade de Brasilia, Instituto de Quimica, 70910-000 Brasilia, DF (Brazil); Pereira-da-Silva, M.A. [Instituto de Fisica de São Carlos, USP, 13560-9700 São Carlos, SP (Brazil); Centro Universitario Central Paulista – UNICEP, 13563-470 São Carlos, SP (Brazil); Morais, P.C. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Soler, M.A.G., E-mail: soler@unb.br [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil)

2017-02-15

A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.

Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

Energy Technology Data Exchange (ETDEWEB)

Goubard, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)]. E-mail: fabrice.goubard@u-cergy.fr; Vidal, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Bazzi, R. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Tillement, O. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Nano-H, 23 rue Royal, 69001 Lyon (France); Chevrot, C. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Teyssie, D. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)

2007-10-15

In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd{sub 2}O{sub 3}. These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films.

Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

Directory of Open Access Journals (Sweden)

Mihaela Girtan

2017-05-01

Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Xia Yan

2015-01-01

Full Text Available Transparent conductive oxides (TCOs play a major role as the front electrodes of thin-film silicon (Si solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl and hydrofluoric acid (HF, through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.

Particle energy loss spectroscopy and SEM studies of topography development in thin aluminium films implanted with high doses of helium

International Nuclear Information System (INIS)

Barfoot, K.M.; Webb, R.P.; Donnelly, S.E.

1984-01-01

Development of topography in thin (55.5 μg cm -2 ) self-supporting aluminium films, caused by high fluence (approx. 10 17 ions cm -2 ) irradiation with 5 keV helium ions, has been observed. This has been achieved by measuring the topography-enhanced energy straggling of 0.40 MeV 4 He + ions transmitted through the foils and detected with an electrostatic analyser of resolution 0.2 keV. Features, about 0.7 μm in width, are observed with scanning electron microscopy. TRIM Monte Carlo calculations of the implantation processes are performed in order to follow the helium implantation and damage depth distributions. It is deduced that a form of thin film micro-wrinkling has occurred which is caused by the relief of stress brought about by the implantation of helium. (author)

Thin film ionic conductors based on cerium oxide

International Nuclear Information System (INIS)

Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

1994-01-01

Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

Prevention of Dealloying in Manganese Aluminium Bronze Propeller: Part II

Directory of Open Access Journals (Sweden)

Napachat Tareelap

2014-03-01

Full Text Available Due to the failure of manganese aluminium bronze (MAB propeller caused by dealloying corrosion as described in Part I [1], this work aims to study the prevention of dealloying corrosion using aluminium and zinc sacrificial anodes. The results indicated that both of the sacrificial anodes could prevent the propeller from dealloying. Moreover, the dealloying in seawater was less than that found in brackish water. It was possible that hydroxide ions, from cathodic reaction, reacted with calcium in seawater to form calcium carbonate film protecting the propeller from corrosion.

Valence control of cobalt oxide thin films by annealing atmosphere

International Nuclear Information System (INIS)

Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

2011-01-01

The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

Aluminium bridges, aluminium bridge decks

NARCIS (Netherlands)

Soetens, F.; Straalen, IJ.J. van

2003-01-01

Applications of aluminium have grown considerably in building and civil engineering the last decade. In building and civil engineering the increase of aluminium applications is due to various aspects like light weight, durability and maintenance, use of extrusions, and esthetics. The paper starts

Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

2009-03-15

In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

Characterization of zirconium alloy oxidation films by alternating current impedance

International Nuclear Information System (INIS)

Rosecrans, P.M.

1984-01-01

Kinetics of zirconium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

Characterization of zirconium alloy oxidation films by alternating current impedance

International Nuclear Information System (INIS)

Rosecrans, P.M.

1983-11-01

Kinetics of zirocnium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

On the mechanism of self-deceleration of the thin oxide film growth

CERN Document Server

Mukhambetov, D G

2002-01-01

The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

International Nuclear Information System (INIS)

Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

2006-01-01

Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

Coprecipitation of aluminium with hydroxides of tetra-, penta- and hexavalent actinides

International Nuclear Information System (INIS)

Yusov, A.B.; Budantseva, N.A.; Anan'ev, A.V.; Fedoseev, A.M.

2000-01-01

By the methods of IR spectroscopy and powder x-ray diffractometry precipitates formed in alkaline medium by actinide (4, 5, 6) in the presence of aluminium are studied. It is shown that in studied conditions formation of actinide aluminates not occurs. In the same time in the process of precipitation interaction of aluminium hydroxocomplexes with U(6) and Th(4) ions probably takes place. Hypothesis is expressed that possibility of aluminium hydroxocomplexes interaction with actinides in different oxidation state is depended on peculiarities of hydrolytic behaviour of the lasts [ru

Laser-Induced, Local Oxidation of Copper Nanoparticle Films During Raman Measurements

Science.gov (United States)

Hight Walker, Angela R.; Cheng, Guangjun; Calizo, Irene

2011-03-01

The optical properties of gold and silver nanoparticles and their films have been thoroughly investigated as surface enhanced Raman scattering (SERS) substrates and chemical reaction promoters. Similar to gold and silver nanoparticles, copper nanoparticles exhibit distinct plasmon absorptions in the visible region. The work on copper nanoparticles and their films is limited due to their oxidization in air. However, their high reactivity actually provides an opportunity to exploit the laser-induced thermal effect and chemical reactions of these nanoparticles. Here, we present our investigation of the local oxidation of a copper nanoparticle film induced by a visible laser source during Raman spectroscopic measurements. The copper nanoparticle film is prepared by drop-casting chemically synthesized copper colloid onto silicon oxide/silicon substrate. The local oxidation induced by visible lasers in Raman spectroscopy is monitored with the distinct scattering peaks for copper oxides. Optical microscopy and scanning electron microscopy have been used to characterize the laser-induced morphological changes in the film. The results of this oxidation process with different excitation wavelengths and different laser powers will be presented.

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José

2010-10-24

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

The structure of high-quality aluminium cast iron

Directory of Open Access Journals (Sweden)

D. Kopyciński

2012-01-01

Full Text Available In this study presents the analyse of aluminium iron cast structure (as-cast condition which are used in high temperature. While producing the casts of aluminium iron major influence has been preserve the structure of technological process parameters. The addition to Fe-C-Al alloy V, Ti, Cr leads to the improvement of functional and mechanical cast qualities. In this study, a method was investigated to eliminate the presence of undesirable Al4C3 phases in a aluminium cast iron structure and thus improve the production process. V and Ti additions in aluminium cast iron allows to development of FeAl - VC or TiC alloys. In particular, V or Ti contents above 5 wt.% were found to totally eliminate the presence of Al4C3. In addition, preliminary work indicates that the alloy with the FeAl - VC or TiC structure reveals high oxidation resistance. The introduction of 5 wt.% chromium to aluminium cast iron strengthened Al4C3 precipitate. Thus, the resultant alloy can be considered an intermetallic FeAl matrix strengthened by VC and TiC or modified Al4C3 reinforcements.

Effect of mass density on surface morphology of electrodeposited manganese oxide films

Science.gov (United States)

Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

2018-05-01

This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

Tantalum oxide thin films as protective coatings for sensors

DEFF Research Database (Denmark)

Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

1999-01-01

Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

Tantalum oxide thin films as protective coatings for sensors

DEFF Research Database (Denmark)

Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

1999-01-01

Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

Aluminum oxide film thickness and emittance

International Nuclear Information System (INIS)

Thomas, J.K.; Ondrejcin, R.S.

1991-11-01

Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

2007-04-15

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

Photoconductivity of reduced graphene oxide and graphene oxide composite films

International Nuclear Information System (INIS)

Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

2012-01-01

A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

Determination of ultratrace amounts of uranium and thorium in aluminium and aluminium alloys by electrothermal vaporization/ICP-MS

International Nuclear Information System (INIS)

Nakamura, Yasushi; Kobayashi, Yoshio; Kakurai, Yousuke

1993-01-01

A method has been developed for determining the 0.01 ng g -1 level of uranium and thorium in aluminium and aluminium alloys by electrothermal vaporization (ETV)/ICP-MS. This method was found to be significantly interfered with any matrices or other elements contained. An ion-exchange technique was therefore applied to separate uranium and thorium from aluminium and other elements. It was known that uranium are adsorbed on an anion-exchange resin and thorium are adsorbed on cation-exchange resin. However, aluminium and copper were eluted with 6 M hydrochloric acid. Dissolve the sample with hydrochloric acid containing copper which was added for analysis of pure aluminium, and oxidize with hydrogen peroxide. Concentration of hydrochloric acid in the solution was adjusted to 6 M, and then passed the solution through the mixed ion-exchange resin column. After the uranium and thorium were eluted with 1 M hydrofluoric acid-0.1 M hydrochloric acid, the solution was evaporated to dryness. It was then dissolved with 1 M hydrochloric acid. Uranium and thorium were analyzed by ETV/ICP-MS using tungsten and molybdenum boats, respectively, since the tungsten boat contained high-level thorium and the molybdenum boat contained uranium. The determination limit of uranium and thorium were 0.003 and 0.005 ng g -1 , respectively. (author)

Thermal transport properties of polycrystalline tin-doped indium oxide films

International Nuclear Information System (INIS)

Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

2009-01-01

Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

Valence control of cobalt oxide thin films by annealing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

2011-02-01

The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

Contradictory effect of chromate inhibitor on corrosive wear of aluminium alloy

International Nuclear Information System (INIS)

Pokhmurskii, V.I.; Zin, I.M.; Vynar, V.A.; Bily, L.M.

2011-01-01

Research highlights: → Corrosive wear of aluminium alloy in inhibited artificial acid rain was studied. → Tribometer with linear reciprocating ball-on-flat geometry was used.→ Corrosion potential, polarization current and friction coefficient were measured. → Chromate decreases corrosion of aluminium alloy under wear conditions. → Chromate in general accelerates corrosive wear of the alloy in acid rain. - Abstract: The corrosive wear of D16T aluminium alloy in artificial acid rain was studied. A special tribometer with the linear reciprocating ball-on-flat geometry was used. The setup allows to measure simultaneously an open circuit potential, to carry out potentiostatic and potentiodynamic polarization studies of the alloy corrosion and to record the friction coefficient. It was established that the addition of strontium chromate inhibitor to the working environment decreases an electrochemical corrosion of the aluminium alloy under wear conditions, but in general accelerates its destruction due to insufficient wear resistance of a formed surface film.

Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

International Nuclear Information System (INIS)

Patil, R B; Puri, R K; Puri, V

2008-01-01

Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

Influence of lead-related centers on luminescence of Ce3+ and Pr3+ centers in single crystalline films of aluminium perovskites and garnets

International Nuclear Information System (INIS)

Babin, V.; Gorbenko, V.; Krasnikov, A.; Makhov, A.; Nikl, M.; Zazubovich, S.; Zorenko, Yu.

2010-01-01

Luminescence characteristics of Ce 3+ - and Pr 3+ -doped aluminium perovskite (LuAlO 3 , YAlO 3 ) and garnet (Lu 3 Al 5 O 12 , Y 3 Al 5 O 12 ) single crystalline films, prepared by the liquid phase epitaxy method with the use of the PbO-based flux, were investigated by the time-resolved spectroscopy methods in the 80-300 K temperature range. The influence of various lead-related centers on the characteristics of the Ce 3+ - and Pr 3+ -related luminescence centers was studied. It was found that the presence of lead-related centers in the single crystalline films results in a decrease of the quantum efficiency and appearance of undesirable slow components in the luminescence decay kinetics. The possibilities of improving the scintillation characteristics of the single crystalline films were considered.

Electrogenerated luminescence of chosen lanthanide complexes at stationary oxide-covered aluminium electrode

International Nuclear Information System (INIS)

Staninski, Krzysztof; Lis, Stefan

2008-01-01

The electrochemiluminescence (ECL) of aqueous solutions of Tb 3+ , Dy 3+ , and Eu 3+ complexes having a variety of ligand groups was studied using an oxide-covered aluminium electrode. The ligand groups, under study, were the aromatic acids (salicylic, phthalic), the chelatic ligands (ethylenediamine DL(o-hydroxy-phenylacetic acid), EDDHA and ethylenediamine tetraacetic acid, EDTA), as well as Schiff bases: 1,10-disalicylidene-4,7-diaza-1,10-decyldiamine and 2-salicylideneamine-2-hydroxymethyl-1,3-propanediol. The results show that the generated emissions were mainly the result of energy transfer from the ligands to the metals. The best ECL properties were observed in the case of the complexes Tb(III)-EDDHA, Dy(III)-EDDHA, and Dy(III)-salicylic acid. In the ternary systems: Schiff base-Tb(III)-Eu(III) energy transfer to the emitting level of the Eu(III) ion was observed

Antireflective bilayer coatings based on Al2O3 film for UV region

OpenAIRE

Marszałek Konstanty; Winkowski Paweł; Marszałek Marta

2015-01-01

Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS). Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring syste...

Oxide growth on aluminium alloys in the presence of ammonium fluoborate

International Nuclear Information System (INIS)

Oliver, J.; Paterson, P.; Flavell, T.; Biddle, G.

1996-01-01

The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH 4 BF 4 . At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH 4 BF 4 atmosphere preheat conditions showed significant improvements. It was verified experimentally that above 500 deg C , AA5182 alloys undergo incipient melting at the grain boundaries with magnesium diffusing through to the surface. 5 refs., 1 fig

Recovery of lithium from geothermal water by amorphous hydrous aluminium oxide

International Nuclear Information System (INIS)

Wada, Hideo; Kitamura, Takao; Ooi, Kenta; Katoh, Shunsaku

1984-01-01

Effects of chemical composition, temperature, and lithium concentration of geothermal water on lithium recovery by amorphous hydrous aluminium oxide (a-HAO) were investigated in order to evaluate the feasibility of this process. The results are summarized as follows: (1) Among various chemical consituents in geothermal water, silica interfered with the lithium adsorption. The lithium uptake decreased when silica concentration exceeded 73 mg/l under 100 mg/50 ml a-HAO to solution ratio. (2) The lithium uptake decreased with an increase of adsorption temperature and was not observed above 40 deg C. At higher temperature, the crystallization of a-HAO to bayerite occurred prior to lithium adsorption. (3) The lithium uptake increased with an increase of lithium concentration. Lithium uptake comparable with lithium contents in lithium ores was obtained at the lithium concentration of 30 mg/l at 20 deg C. These results show that a-HAO is applicable to collect lithium from geothermal water if silica can be removed before lithium adsorption. (author)

Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

International Nuclear Information System (INIS)

Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

2014-01-01

A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

2014-11-15

A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

Alloys of uranium and aluminium with low aluminium content; Alliages uranium-aluminium a faible teneur en aluminium

Energy Technology Data Exchange (ETDEWEB)

Cabane, G; Englander, M; Lehmann, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1955-07-01

Uranium, as obtained after spinning in phase {gamma}, presents an heterogeneous structure with large size grains. The anisotropic structure of the metal leads to an important buckling and surface distortion of the fuel slug which is incompatible with its tubular cladding for nuclear fuel uses. Different treatments have been made to obtain an isotropic structure presenting high thermal stability (laminating, hammering and spinning in phase {alpha}) without success. Alloys of uranium and aluminium with low aluminium content present important advantage in respect of non allied uranium. The introduction of aluminium in the form of intermetallic compound (UAl{sub 2}) gives a better resistance to thermal fatigue. Alloys obtained from raw casting present an improved buckling and surface distortion in respect of pure uranium. This improvement is obtained with uranium containing between 0,15 and 0,5 % of aluminium. An even more improvement in thermal stability is obtained by thermal treatments of these alloys. These new characteristics are explained by the fine dispersion of the UAl{sub 2} particles in uranium. The results after treatments obtained from an alloy slug containing 0,4 % of aluminium show no buckling or surface distortion and no elongation. (M.P.)

Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

Science.gov (United States)

Harunsyah; Yunus, M.; Fauzan, Reza

2017-06-01

This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

Growth and surface characterization of sputter-deposited molybdenum oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Ramana, C.V. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)]. E-mail: ramanacv@umich.edu; Atuchin, V.V. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kesler, V.G. [Technical Centre, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Kochubey, V.A. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Pokrovsky, L.D. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Shutthanandan, V. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Becker, U. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Ewing, R.C. [Nanoscience and Surface Chemistry Laboratory, Department of Geological Sciences, University of Michigan, Ann Arbor, MI 48109 (United States)

2007-04-15

Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of an argon-oxygen gas mixture under varying conditions of substrate temperature (T {sub s}) and oxygen partial pressure (pO{sub 2}). The effect of T {sub s} and pO{sub 2} on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy-dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of T {sub s} and pO{sub 2} on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 deg. C under 62.3% O{sub 2} pressure were stoichiometric and polycrystalline MoO{sub 3}. Films grown at lower pO{sub 2} were non-stoichiometric MoO {sub x} films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO{sub 3} films.

Native oxidation of ultra high purity Cu bulk and thin films

International Nuclear Information System (INIS)

Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

2006-01-01

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

Rows of Dislocation Loops in Aluminium Irradiated by Aluminium Ions

DEFF Research Database (Denmark)

Henriksen, L.; Johansen, A.; Koch, J.

1967-01-01

Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics......Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along directions. ©1967 The American Institute of Physics...

The disclosed transformation of pre-sputtered Ti films into nanoparticles via controlled thermal oxidation

Science.gov (United States)

Awad, M. A.; Raaif, M.

2018-05-01

Nanoparticles of TiO2 were successfully prepared from pre-sputtered Ti films using the controlled thermal oxidation. The effect of oxidation temperature on structural, morphological and optical properties in addition to photocatalysis activity of the sputtered films was tested and explained. Analysis of XRD and EDAX elucidated the enhancement in crystallization and oxygen content with the increase of oxidation temperature. SEM depicted the formation of very fine nanoparticles with no specific border on the films oxidized at 550 and 600 °C, whilst crystallites with larger size of approximately from 16 to 23 nm have been observed for the film oxidized at 650 °C. Both optical transmission and refractive index were increased with increasing the oxidation temperature. A red shift in the absorption edge was obtained for the films oxidized at 650 °C compared to that oxidized at 600 °C. The photocatalysis tests demonstrated the priority of 600 °C nanoparticle films to decompose methyl orange (MO) more than 650 °C treated film.

Preparation, characterization and electrocatalytic behavior of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate hybrid film-modified electrodes

Energy Technology Data Exchange (ETDEWEB)

Chu, H.-W.; Thangamuthu, R. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China); Chen, S.-M. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China)], E-mail: smchen78@ms15.hinet.net

2008-02-15

Polynuclear mixed-valent hybrid films of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate (ZnO/ZnHCF-RuOHCF) have been deposited on electrode surfaces from H{sub 2}SO{sub 4} solution containing Zn(NO{sub 3}){sub 2}, RuCl{sub 3} and K{sub 3}[Fe(CN){sub 6}] by potentiodynamic cycling method. Simultaneous cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM) measurements demonstrate the steady growth of hybrid film. Surface morphology of hybrid film was investigated using scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) data confirm existence of zinc oxide and ruthenium oxide hexacyanoferrate (RuOHCF) in the hybrid film. The effect of type of monovalent cations on the redox behavior of hybrid film was investigated. In pure supporting electrolyte, electrochemical responses of Ru{sup II/III} redox transition occurring at negative potential region resemble with that of a surface immobilized redox couple. The electrocatalytic activity of ZnO/ZnHCF-RuOHCF hybrid film was investigated towards oxidation of epinephrine, dopamine and L-cysteine, and reduction of S{sub 2}O{sub 8}{sup 2-} and SO{sub 5}{sup 2-} as well as IO{sub 3}{sup -} using cyclic voltammetry and rotating ring disc electrode (RRDE) techniques.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Energy Technology Data Exchange (ETDEWEB)

Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

2016-12-15

Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

Strain-induced phenomenon in complex oxide thin films

Science.gov (United States)

Haislmaier, Ryan

Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

Energy Technology Data Exchange (ETDEWEB)

Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

2014-01-28

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

International Nuclear Information System (INIS)

Tripathy, Sumanta K.; Rajeswari, V. P.

2014-01-01

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

Modification of oxide films by ion implantation: TiO2-films modified by Ti+ and O+ as example

International Nuclear Information System (INIS)

Schultze, J.W.; Elfenthal, L.; Leitner, K.; Meyer, O.

1988-01-01

Oxide films can be modified by ion implantation. Changes in the electrochemical properties of the films are due to the deposition profile of the implanted ion, ie doping and stoichiometric changes, as well as to the radiation damage. The latter is due to the formation of Frenkel defects and at high concentrations to a complete amorphization of the oxide film. TiOsub(x)-films with 1 + - and O + -ions into anodic oxide films on titanium. The electrode capacity shows always the behaviour of an n-type semiconductor with an almost constant flatband potential but a strong maximum donor concentration at about 3% Ti + concentration. Oxygen implantation, on the other hand, causes a small increase of donor concentration only at high concentration of O + . Electron transfer reactions show strong modifications of the electronic behaviour of the oxide film with a maximum again at 3% titanium. Photocurrent spectra prove the increasing amorphization and show interband states 2.6 eV above the VB or below the CB. During repassivation measurements at various potentials different defects formed by Ti + - and O + -implantation become mobile. A tentative model of the band structure is constructed which takes into account the interband states due to localised Ti + - and O + -ions. The modification of ion implanted oxide films is compared with the effects of other preparation techniques. (author)

Formation and dissolution of the anodic oxide film on zirconium in alcoholic aqueous solutions

International Nuclear Information System (INIS)

Mogoda, A.S.

1995-01-01

The dissolution behavior of the anodic oxide film formed in alcoholic aqueous solutions was studied. Results indicated the dissolution mechanism of the duplex oxide film followed a zero-order rate equation. The increase in methanol concentration in the formation medium (phosphoric acid [H 3 PO 4 ]) resulted in formation of an oxide film that incorporated little phosphate ion and that dissolved at a low rate. The dissolution rate of the oxide film decreased with increasing methanol concentration in the dissolution medium. This was attributed to the increase in the viscosity of the medium, which led to a decrease in the diffusion coefficient of the dissolution product of the zirconium oxide film. Dissolution of the anodic oxide film also was investigated as a function of the chain length of alcohols

Swelling of a Zirconium Oxide Film

International Nuclear Information System (INIS)

Henderson, Mark; Hawley, Adrian; White, John; Rennie, Adrian

2005-01-01

Full text: The structural changes that cause the change in the interlayer spacing of a surfactanttemplated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 Aangstroem on a lattice parameter of about 36 Aangstroem. The (001) and (002) diffraction peaks positions, widths and areas of a swollen film were then monitored by neutron diffraction as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals. (authors)

Laser synthesis of aluminium nanoparticles in biocompatible polymer solutions

Science.gov (United States)

Singh, Rina; Soni, R. K.

2014-08-01

Pulsed laser ablation of Aluminium (Al) in pure water rapidly forms a thin alumina (Al2O3) layer which drastically modifies surface plasmon resonance (SPR) absorption characteristics in deep-UV region. Initially, pure aluminium nanoparticles (NPs) are generated in water without any stabilizers or surfactants at low laser fluence which gradually transform to stable Al-Al2O3 core-shell nanostructure with increasing either residency time or fluence. The role of laser wavelength and fluence on the SPR properties and oxidation characteristics of Al NPs has been investigated in detail. We also present a one-step in situ synthesis of oxide-free stable Al NPs in biocompatible polymer solutions using laser ablation in liquid method. We have used nonionic polymers (PVP, PVA and PEG) and anionic surfactant (SDS) stabilizer to suppress the Al2O3 formation and studied the effect of polymer functional group, polymeric chain length, polymer concentration and anionic surfactant on the incipient embryonic aluminium particles and their sizes. The different functional groups of polymers resulted in different oxidation states of Al. PVP and PVA polymers resulted in pure Al NPs; however, PEG and SDS resulted in alumina-modified Al NPs. The Al nanoparticles capped with PVP, PVA, and PEG show a good correlation between nanoparticle stability and monomeric length of the polymer chain.

Films of double oxides of zirconium and iron

International Nuclear Information System (INIS)

Kozik, V.V.; Borilo, L.P.; Shul'pekov, A.M.

2000-01-01

Films of double oxides of zirconium and iron were prepared by the method of precipitation from film-forming alcohol solutions of zirconium oxychloride and iron chloride with subsequent thermal treatment. Using the methods of X-ray phase and differential thermal analyses, conductometry and optical spectroscopy, basic chemical processes occurring in the film-forming solutions and during thermal treatment are studied alongside with phase composition and optical characteristics of the films prepared. The composition-property diagrams of the given system in a thin-film state are plotted [ru

Oxidation behaviour of Ti2AIN films composed mainly of nanolaminated MAX phase.

Science.gov (United States)

Wang, Q M; Garkas, W; Renteria, A Flores; Leyens, C; Kim, K H

2011-10-01

In this paper, we reported the oxidation behaviour of Ti2AIN films on polycrystalline Al2O3 substrates. The Ti2AIN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti-Al-N films using reactive sputtering of two elemental Ti and Al targets in Ar/N2 atmosphere and subsequent vacuum annealing at 800 degrees C for 1 h. The Ti2AIN films exhibited excellent oxidation resistance and thermal stability at 600-900 degrees C in air. Very low mass gain was observed. At low temperature (600 degrees C), no oxide crystals were observed on film surface. Blade-like Theta-Al2O3 fine crystals formed on film surfaces at 700-800 degrees C. At high temperature (900 degrees C), firstly Theta-Al2O3 formed on film surface and then transformed into alpha-Al2O3. At 700-900 degrees C, a continuous Al2O3 layer formed on Ti2AIN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2AIN films was discussed based on the experimental results.

Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

Science.gov (United States)

Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

2016-12-01

Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

Nanocomposite oxide thin films grown by pulsed energy beam deposition

International Nuclear Information System (INIS)

Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

2011-01-01

Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

Effect of heat treatment on anodic activation of aluminium by trace element indium

Energy Technology Data Exchange (ETDEWEB)

Graver, Brit [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Helvoort, Antonius T.J. van [Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Nisancioglu, Kemal, E-mail: kemal.nisancioglu@material.ntnu.n [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway)

2010-11-15

Research highlights: {yields} Indium segregation activates AlIn alloy surface anodically in chloride solution. {yields} Enrichment of In on Al surface can occur thermally by heat treatment at 300 {sup o}C. {yields} Increasing temperature homogenises indium in aluminium reducing anodic activation. {yields} Indium can activate AlIn surface by segregating through dealloying of aluminium. {yields} Anodic activation is caused by AlIn amalgam formation at aluminium surface. - Abstract: The presence of trace elements in Group IIIA-VA is known to activate aluminium anodically in chloride environment. The purpose of this paper is to investigate the surface segregation of trace element In by heat treatment and resulting surface activation. Model binary AlIn alloys, containing 20 and 1000 ppm by weight of In, were characterized after heat treatment at various temperatures by use of glow discharge optical emission spectroscopy, electron microscopy and electrochemical polarization. Heat treatment for 1 h at 300 {sup o}C gave significant segregation of discrete In particles (thermal segregation), which activated the surface. Indium in solid solution with aluminium, obtained by 1 h heat treatment at 600 {sup o}C, also activated by surface segregation of In on alloy containing 1000 ppm In, resulting from the selective dissolution of the aluminium component during anodic oxidation (anodic segregation). The effect of anodic segregation was reduced by decreasing indium concentration in solid solution; it had negligible effect at the 20 ppm level. The segregated particles were thought to form a liquid phase alloy with aluminium during anodic polarization, which in turn, together with the chloride in the solution destabilized the oxide.

Cermet sintering on the oase of molybdenum, nickel, aluminium oxide in dry and wet hydrogen medium

International Nuclear Information System (INIS)

Fedotov, A.V.; Lutskaya, E.Eh.

1985-01-01

Cermet sintering on the base of molybdenum, nickel and aluminium oxide in dry and wer hydrogen medium is studied. It is stated that presence of water vapours permits to decrease sintering temperature of molybdenum containing cermets and to prepare dense nickeliferous cermets. Cermet density can he rather high at final stages of sintering that is probably conditioned by decrease of growth rate of corundum crystals. Pressing pressure activates cermet siptering at intermediate stages and it is low effective at finite stages of condensation. Constancy of relative reduction of void volume is preserved only at final stages of sintering

Intrinsic stress evolution during amorphous oxide film growth on Al surfaces

International Nuclear Information System (INIS)

Flötotto, D.; Wang, Z. M.; Jeurgens, L. P. H.; Mittemeijer, E. J.

2014-01-01

The intrinsic stress evolution during formation of ultrathin amorphous oxide films on Al(111) and Al(100) surfaces by thermal oxidation at room temperature was investigated in real-time by in-situ substrate curvature measurements and detailed atomic-scale microstructural analyses. During thickening of the oxide a considerable amount of growth stresses is generated in, remarkably even amorphous, ultrathin Al 2 O 3 films. The surface orientation-dependent stress evolutions during O adsorption on the bare Al surfaces and during subsequent oxide-film growth can be interpreted as a result of (i) adsorption-induced surface stress changes and (ii) competing processes of free volume generation and structural relaxation, respectively

Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

International Nuclear Information System (INIS)

Lee, Kyuha; Kim, A-Young; Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young; Lee, Joong Kee

2014-01-01

Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO 4 salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

Science.gov (United States)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

A novel Graphene Oxide film: Synthesis and Dielectric properties

Science.gov (United States)

Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with Sdirect current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

Design of the fuel element 'snow-flake' in uranium oxide, canned with aluminium, for the experimental reactor EL 3 (1960); Etude d'un element combustible en oxyde d'uranium gaine d'aluminium, type ''cristal de neige'' pour la pile EL 3 (1960)

Energy Technology Data Exchange (ETDEWEB)

Gauthron, M; Guibert, B [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

1960-07-01

This report sums up the main studies have been carried out on the fuel element 'Snowflake' (uranium oxide, canned with aluminium), designed to replace the present element of the experimental reactor EL3 in order to increase the reactivity without modifying the neutron flux/thermal power ratio. (author) [French] Ce rapport resume les principales etudes qui ont ete faites sur l'element combustible 'Cristal de Neige' (a oxyde d'uranium, gaine d'aluminium) destine a remnlacer l'element actuel du reacteur experimental EL3, afin d'en augmenter la reactivite sans modifier le rapport flux neutronique-puissance thermique. (auteur)

Electrogenerated luminescence of chosen lanthanide complexes at stationary oxide-covered aluminium electrode

Energy Technology Data Exchange (ETDEWEB)

Staninski, Krzysztof [Department of Rare Earths, Faculty of Chemistry, Adam Mickiewicz University, Grunwaldzka 6, Poznan 60-780 (Poland); Lis, Stefan [Department of Rare Earths, Faculty of Chemistry, Adam Mickiewicz University, Grunwaldzka 6, Poznan 60-780 (Poland)], E-mail: blis@amu.edu.pl

2008-02-28

The electrochemiluminescence (ECL) of aqueous solutions of Tb{sup 3+}, Dy{sup 3+}, and Eu{sup 3+} complexes having a variety of ligand groups was studied using an oxide-covered aluminium electrode. The ligand groups, under study, were the aromatic acids (salicylic, phthalic), the chelatic ligands (ethylenediamine DL(o-hydroxy-phenylacetic acid), EDDHA and ethylenediamine tetraacetic acid, EDTA), as well as Schiff bases: 1,10-disalicylidene-4,7-diaza-1,10-decyldiamine and 2-salicylideneamine-2-hydroxymethyl-1,3-propanediol. The results show that the generated emissions were mainly the result of energy transfer from the ligands to the metals. The best ECL properties were observed in the case of the complexes Tb(III)-EDDHA, Dy(III)-EDDHA, and Dy(III)-salicylic acid. In the ternary systems: Schiff base-Tb(III)-Eu(III) energy transfer to the emitting level of the Eu(III) ion was observed.

Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

International Nuclear Information System (INIS)

Kubo, Toshio; Uno, Masayoshi

1991-01-01

Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

International Nuclear Information System (INIS)

Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

2006-01-01

The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

Friction behaviour of anodic oxide film on aluminum impregnated with molybdenum sulfide compounds

Energy Technology Data Exchange (ETDEWEB)

Maejima, M.; Saruwatari, K. [Fujikura Ltd., Tokyo (Japan); Takaya, M. [Faculty of Engineering, Chiba Institute of Technology 17-1, Tsudanuma 2-Chome, 275-0016, Narasino-shi Chiba (Japan)

2000-10-23

In order to improve the lubricity and wear resistance of aluminum anodic oxide films, it is necessary to ensure the film layers are dense to prevent cracking, and to harden the films as well as reduce the shear stress of the film surfaces. From this view point, lubricious, hard anodic oxide films have been studied in the past, but fully satisfactory results have yet to be realized. In this paper, we report on our study of the re-anodizing of anodic oxide film in an aqueous solution of (NH)MoS. Molybdenum sulfide and compounds filled the 20-nm diameter pores of the film, creating internal stress which compressed the film, suppressing the occurrence of cracks and reducing the friction coefficient. (orig.)

Oxygen–induced barrier height changes in aluminium – amorphous ...

African Journals Online (AJOL)

The results show that the application of voltage causes charge exchange between the surface states and the semiconductor leading to a change in the height of the potential barrier for electrons passing from aluminium into the a-Se films. The empirically determined values of barrier height of Al/a-Se diodes with thin and ...

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Influences of the main anodic electroplating parameters on cerium oxide films

Energy Technology Data Exchange (ETDEWEB)

Yang, Yang; Yang, Yumeng; Du, Xiaoqing; Chen, Yu [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Zhao, E-mail: eaglezzy@zjuem.zju.edu.cn [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); Zhang, Jianqing [Department of Chemistry, Zhejiang University, Hangzhou 310027, Zhejiang (China); State Key Laboratory for Corrosion and Protection of Metals, Shenyang 110016 (China)

2014-06-01

Cerium oxide thin films were fabricated onto 316 L stainless steel via a potentiostatically anodic electrodeposition approach in the solutions containing cerium(III) nitrate (0.05 M), ammonia acetate (0.1 M) and ethanol (10% V/V). The electrochemical behaviors and deposition parameters (applied potential, bath temperature, dissolving O{sub 2} and bath pH) have been investigated. Results show that, the electrochemical oxidation of Ce{sup 3+} goes through one electrochemical step, which is under charge transfer control. The optimum applied potential for film deposition is 0.8 V. Bath temperature plays a significant effect on the deposition rate, composition (different colors of the film) and surface morphology of the deposits. Due to the hydrolysis of Ce{sup 3+}, cerous hydroxide is facility to form when the bath temperature is higher than 60 °C. The electroplating bath pH is another key role for the anodic deposition of cerium oxide thin films, and the best bath pH is around 6.20. N{sub 2} or O{sub 2} purged into the bath will result in film porosities and O{sub 2} favors cerium oxide particles and film generation.

Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

International Nuclear Information System (INIS)

Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

2013-01-01

Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

Magnetic properties of partially oxidized Fe films

Science.gov (United States)

Garcia, Miguel Angel; Lopez-Dominguez, Victor; Hernando, Antonio

Hybrid magnetic nanostructures exhibit appealing properties due to interface and proximity effects. A simple and interesting system of hybrid magnetic nanomaterials are partially oxidized ferromagnetic films. We have fabricated Fe films by thermal evaporation and performed a partial oxidation to magnetite (Fe3O4) by annealing in air at different times and temperatures. The magnetic properties of the films evolve from those of pure metallic iron to pure magnetite, showing intermediate states where the proximity effects control the magnetic behavior. At some stages, the magnetization curves obtained by SQUID and MOKE magnetometry exhibit important differences due to the dissimilar contribution of both phases to the magneto-optical response of the system This work has been supported by the Ministerio Español de Economia y Competitividad (MINECO) MAT2013-48009-C4-1. V.L.D and M.A.G. acknowledges financial support from BBVA foundation.

Investigation of aluminium-rich alloy system of aluminium-strontium-silicium

International Nuclear Information System (INIS)

Ganiev, I.N.; Vakhobov, A.B.; Dzhuraev, T.D.; Alidzhanov, F.N.

1976-01-01

An area of the solid solution based on aluminium was studied, and the surface was plotted of the liquidus adjoining the apex of the aluminium corner of the strontium-aluminium-silicon system. The investigation was carried out by microstructure and differential thermal analyses and by the measurement of the microhardness of the component phases. A combined solubility of silicon and strontium in aluminium was studied along three radial sections at Sr-to-Si ratios of 1/2, 1/1 and 2/1. The relationships of ''composition vs. Microhardness'', obtained in these sections, made it possible to define the boundaries of the phase regions in the aluminium corner of the strontium-aluminium-silicon system at 500 deg C. The greatest solubility is that along the Al-SrAl 2 Si 2 section at a Sr/Si ratio of 1/2. A further increase in the content of strontium brings about a drop in the solubility of silicon in solid aluminium. The projection of the liquidus surface of the strontium-aluminium-silicon system, rich in aluminium, includes four surfaces of primary crystallization: α-Al, SrAl 4 , SrAl 2 Si 2 and Si. The system comprises a section of Al-SrAl 2 Si 2 representing a quasibinary system of an eutectic type. The eutectic reaction takes place at a temperature of 640 deg C. The quasibinary Al-SrAl 2 Si 2 section divides the aluminium corner of the Sr-Al-Si system into two independent systems Al-SrAl 4 -SrAl 2 Si 2 and Al-Si-SrAl 2 Si 2 of an eutectic type

Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

Energy Technology Data Exchange (ETDEWEB)

Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

2014-12-01

Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

Science.gov (United States)

Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

2010-07-13

Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

The role of magnesium in the electrochemical behaviour of 5XXX aluminium-magnesium alloys

NARCIS (Netherlands)

Flores Ramirez, J.R.

2006-01-01

An investigation concerning the effects of magnesium on the intergranular corrosion susceptibility of AA5XXX aluminium alloys was carried out. In the present work, magnesium is found to be highly mobile in the bulk metal as well as in the aluminium oxide. This mobility is also found to be dependent

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

International Nuclear Information System (INIS)

Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

2013-01-01

Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

Directory of Open Access Journals (Sweden)

SUN Tao

2017-02-01

Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

Oxide films in laser additive manufactured Inconel 718

International Nuclear Information System (INIS)

Zhang, Y.N.; Cao, X.; Wanjara, P.; Medraj, M.

2013-01-01

A continuous-wave 5 kW fiber laser welding system was used in conduction mode to deposit Inconel® alloy 718 (IN718) by employing filler wire on as-serviced IN718 parent material (PM) substrates. The direct laser deposited (DLD) coupons and as-serviced IN718 PM were then evaluated through tensile testing. To understand the failure mechanisms, the tensile fracture surfaces of the as-serviced IN718 PM, DLD and DLD-PM samples were analyzed using scanning electron microscopy. The fracture surfaces revealed the presence of both Al 2 O 3 and Cr 2 O 3 films, although the latter was reasoned to be the main oxide in IN718. Both the experimental observations and thermodynamic analysis indicated that oxidation of some alloying elements in IN718 cannot be completely avoided during manufacturing, whether in the liquid state under vacuum (for casting, the electron beam melting, welding and/or deposition) or with inert gas protection (for welding or laser deposition). The exposed surface of the oxide film on the fracture surface has poor wetting with the metal and thus can constitute a lack of bonding or a crack with either the metal and/or another non-wetted side of the oxide film. On the other hand, the wetted face of the oxide film has good atom-to-atom contact with the metal and may nucleate some intermetallic compounds, such as Laves, Ni 3 Nb-δ, Nb-rich MC and γ′ compounds. The potential of their nucleation on Cr 2 O 3 was assessed using planar disregistry. Coherent planes were found between these intermetallics and Cr 2 O 3

Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

Science.gov (United States)

Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

2018-05-01

Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

Structural transformation of nickel hydroxide films during anodic oxidation

Energy Technology Data Exchange (ETDEWEB)

Crocker, Robert W. [Univ. of California, Berkeley, CA (United States); Muller, Rolf H. [Univ. of California, Berkeley, CA (United States)

1992-05-01

The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 - 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

Structural transformation of nickel hydroxide films during anodic oxidation

Energy Technology Data Exchange (ETDEWEB)

Crocker, R.W.; Muller, R.H.

1992-05-01

The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

Micro-length anodic porous niobium oxide for lithium-ion thin film battery applications

International Nuclear Information System (INIS)

Yoo, Jeong Eun; Park, Jiyoung; Cha, Gihoon; Choi, Jinsub

2013-01-01

The anodization of niobium in an aqueous mixture of H 3 PO 4 and HF in the potential range from 2.5 to 30 V for 2 h at 5 °C was performed, demonstrating that anodic porous niobium oxide film with a thickness of up to 2000 nm, including a surface dissolution layer, can be obtained by controlling the applied potential and composition of the electrolytes. Specifically, surface dissolution-free porous niobium oxide film with a thickness of 800 nm can be prepared in a low electrolyte concentration. The surface dissolution is observed when the concentration ratio of HF (wt.%):H 3 PO 4 (M) was more than 2:1. The discontinuous layers in the niobium oxide film were observed when the thickness was higher than 500 nm, which was ascribed to the large volume expansion of the niobium oxide grown from the niobium metal. The anodic porous niobium oxide film was used as the cathode for lithium-ion batteries in the potential range from 1.2 to 3.0 V at a current density of 7.28 × 10 − 6 A cm −2 . The first discharge capacity of ca. 53 μA h cm − 2 was obtained in 800 nm thick niobium oxide without a surface dissolution layer. - Highlights: ► Anodic porous niobium oxide film with a thickness of 2000 nm was obtained. ► Surface dissolution-free porous niobium oxide film was prepared. ► The niobium oxide film was used as the cathode for lithium-ion batteries

Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

International Nuclear Information System (INIS)

Predoi, D.; Ciobanu, C.S.; Radu, M.; Costache, M.; Dinischiotu, A.; Popescu, C.; Axente, E.; Mihailescu, I.N.; Gyorgy, E.

2012-01-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: ► Hybrid, dextran-iron oxide nanoparticles and thin films. ► Laser immobilization. ► Biocompatibility of dextran-iron oxide nanoparticles.

Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

International Nuclear Information System (INIS)

Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

2015-01-01

Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The growth and evolution of thin oxide films on delta-plutonium surfaces

Energy Technology Data Exchange (ETDEWEB)

Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

2009-01-01

The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

International Nuclear Information System (INIS)

Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

2015-01-01

Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

Effect of micro-patterned fluorine-doped tin oxide films on electrochromic properties of Prussian blue films

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyuha [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Kim, A-Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Department of Material Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Park, Ji Hun; Jung, Hun-Gi; Choi, Wonchang; Lee, Hwa Young [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

2014-09-15

Graphical abstract: - Highlights: • PB-based ECD employed micro-patterned FTO electrode was fabricated. • Effect of interface morphology on electrochromic characteristics was examined. • Electrochromic properties were enhanced by employing a patterned interface. - Abstract: The effect of interface morphology on electrochromic characteristics was examined for an electrochromic device (ECD). Micro-patterned fluorine-doped tin oxide (FTO) films were fabricated using a photolithography process. Prussian blue (PB) films were then deposited on the patterned FTO films. The surface areas of both PB films and FTO films were increased by patterning. ECDs were assembled using patterned PB/FTO films as the electrochromic electrode, bare FTO films as the counter electrode, and an electrolyte containing LiClO{sub 4} salt. The increased effective surface area of the patterned PB/FTO electrode boosted the mobility of ions at the interphase between the electrolyte and PB electrode, and the electron transfer between PB films and FTO films. As a result, electrochromic properties such as transmittance and response time were significantly improved by employing the patterned FTO films as the transparent conductive oxide layer of the electrochromic electrode.

Structural and optical properties of electrodeposited molybdenum oxide thin films

International Nuclear Information System (INIS)

Patil, R.S.; Uplane, M.D.; Patil, P.S.

2006-01-01

Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Ultraviolet sensing properties of polyvinyl alcohol-coated aluminium ...

Indian Academy of Sciences (India)

Undoped and aluminium (Al)-doped zinc oxide (ZnO) nanorods have been synthesized by electrochemical route. The synthesized materials have been characterized by X-ray diffraction, UV–visible spectrometer and scanning electron microscope. The Al-doped ZnO nanorods have been coated with polyvinyl alcohol.

Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

NARCIS (Netherlands)

Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

2008-01-01

Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

Oxide growth on aluminium alloys in the presence of ammonium fluoborate

Energy Technology Data Exchange (ETDEWEB)

Oliver, J; Paterson, P; Flavell, T [Royal Melbourne Inst. of Tech., VIC (Australia); Biddle, G [Alcoa Rolled Products (Australia)

1997-12-31

The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH{sub 4}BF{sub 4}. At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH{sub 4}BF{sub 4} atmosphere preheat conditions showed significant improvements. It was verified experimentally that above 500 deg C , AA5182 alloys undergo incipient melting at the grain boundaries with magnesium diffusing through to the surface. 5 refs., 1 fig.

Oxide growth on aluminium alloys in the presence of ammonium fluoborate

Energy Technology Data Exchange (ETDEWEB)

Oliver, J.; Paterson, P.; Flavell, T. [Royal Melbourne Inst. of Tech., VIC (Australia); Biddle, G. [Alcoa Rolled Products (Australia)

1996-12-31

The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH{sub 4}BF{sub 4}. At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH{sub 4}BF{sub 4} atmosphere preheat conditions showed significant improvements. It was verified experimentally that above 500 deg C , AA5182 alloys undergo incipient melting at the grain boundaries with magnesium diffusing through to the surface. 5 refs., 1 fig.

Aluminium in human sweat.

Science.gov (United States)

Minshall, Clare; Nadal, Jodie; Exley, Christopher

2014-01-01

It is of burgeoning importance that the human body burden of aluminium is understood and is measured. There are surprisingly few data to describe human excretion of systemic aluminium and almost no reliable data which relate to aluminium in sweat. We have measured the aluminium content of sweat in 20 healthy volunteers following mild exercise. The concentration of aluminium ranged from 329 to 5329μg/L. These data equate to a daily excretion of between 234 and 7192μg aluminium and they strongly suggest that perspiration is the major route of excretion of systemic aluminium in humans. Copyright © 2013 Elsevier GmbH. All rights reserved.

Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

International Nuclear Information System (INIS)

Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

1992-01-01

Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

2012-02-01

Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

Al-Sn doped ZnO thin film nanosensor for monitoring NO2 concentration

Directory of Open Access Journals (Sweden)

G.S. Hikku

2017-07-01

Full Text Available The metal oxide semiconductor gas sensor technology is robust and has quick response times. In this work, aluminium and tin co-doped zinc oxide (ASZO thin films were synthesized by a sol–gel dip-coating process as sensors for the greenhouse gas nitrogen dioxide (NO2. The prepared ASZO thin films were characterized using such techniques as X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and photoluminescence (PL emission studies in order to analyze the elemental confirmation, particle size, surface roughness and optical emission properties, respectively. The XRD data reveals the hexagonal structure of ASZO and that the preferential orientation is along 2θ = 36.19°. SEM images of the ASZO thin film exhibit rod-like formations of ASZO on the substrate. The ASZO films show enhanced sensing behaviour, sensing NO2 gas even at 2 ppm at an operating temperature of 170 °C. The response and recovery times were determined to be 30 and 20 s, respectively.

Elucidation of the electrochromic mechanism of nanostructured iron oxides films

Energy Technology Data Exchange (ETDEWEB)

Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

2011-02-15

Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

Optimum deposition, structure, and properties of tantalum oxide films

International Nuclear Information System (INIS)

Lin, Y.C.

1985-01-01

Amorphous, ductile, and uniform Ta 2 O 5 films that acted as diffusion barriers were developed by sputter depositing Ta metal on Al single crystals (99.99%) and subsequently anodizing these thin films. The morphology, microstructure, composition and properties were characterized by scanning and transmission electron microscopy, surface and Fourier transform infrared spectroscopy, X-ray diffraction, and fluorescence. Superior corrosion resistance in a water saturated Cl 2 atmosphere was provided by Ta 2 O 5 coating on Al single crystal substrates but not on Al alloys. The strong Ta-O bond, the non-porous nature of the film and good adhesion to the substrate are attributed to the outstanding corrosion resistance of these oxide coatings. Al alloy surfaces are not protected, since the anodic film formed over grain boundaries, processing lines and emergent precipitates is poorly adherent, thus providing loci for corrosion. These problems were eliminated by casting a 400 A layer of tantalum oxyhydroxide polymer from ethanol solution onto Al substrate and curing to a Ta 2 O 5 layer that effectively resisted attack by wet Cl 2 . The mechanical properties of Ta 2 O 5 films on Al alloys were studied at various pH's by in-situ fatigue loading coupled with electrochemical measurements of corrosion potential and corrosion current. These results indicate the fatigue resistance of this oxide film effectively protects the underlying metal from strong HCl solution attack. The very unusual ductility and high corrosion resistance of Ta 2 O 5 films could be related to the graphite-like structure that exists in the amorphous state of this oxide

In situ Oxidation of Ultrathin Silver Films on Ni(111)

International Nuclear Information System (INIS)

Meyer, A.; Flege, I.; Senanayake, S.; Kaemena, B.; Rettew, R.; Alamgir, F.; Falta, J.

2011-01-01

Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite; Estudo de filme de grafeno/oxido de grafeno obtido por reducao quimica parcial do oxido de grafite

Energy Technology Data Exchange (ETDEWEB)

Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H., E-mail: juliagascho@hotmail.com [Universidade do Estado de Santa Catarina (UDESC), Joinville, SC (Brazil). Programa de Pos-Graduacao em Ciencia e Engenharia de Materiais

2014-07-01

This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

Synthesis of electro-active manganese oxide thin films by plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Merritt, Anna R. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States); Rajagopalan, Ramakrishnan [Department of Engineering, The Pennsylvania State University, Dubois, PA 15801 (United States); Materials Research Institute, The Pennsylvania State University, University Park, PA 16802 (United States); Carter, Joshua D. [Energetics Research Division, Naval Air Warfare Center Weapons Division, China Lake, CA 93555 (United States)

2014-04-01

The good stability, cyclability and high specific capacitance of manganese oxide (MnO{sub x}) has recently promoted a growing interest in utilizing MnO{sub x} in asymmetric supercapacitor electrodes. Several literature reports have indicated that thin film geometries of MnO{sub x} provide specific capacitances that are much higher than bulk MnO{sub x} powders. Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique for the production of metal oxide thin films with high purity and controllable thickness. In this work, MnO{sub x} thin films deposited by PECVD from a methylcyclopentadienyl manganese tricarbonyl precursor are presented and the effect of processing conditions on the quality of MnO{sub x} films is described. The film purity and oxidation state of the MnO{sub x} films were studied by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Preliminary electrochemical testing of MnO{sub x} films deposited on carbon fiber electrodes in aqueous electrolytes indicates that the PECVD synthesized films are electrochemically active. - Highlights: • Plasma enhanced chemical vapor deposition of manganese oxide thin films. • Higher plasma power and chamber pressure increase deposition rate. • Manganese oxide thin films are electrochemically active. • Best electrochemical performance observed for pure film with low stress • Lower capacitance observed at higher scan rates despite thin film geometry.

Influence of annealing on texture properties of cerium oxide thin films

International Nuclear Information System (INIS)

Arunkumar, P.; Suresh Babu, K.; Ramaseshan, R.; Dash, S.

2013-01-01

Future power demand needs an energy source with higher efficiency, better power density, clean energy and fuel flexibility. Solid oxide fuel cell (SOFC) is one of the potential sources for future needs. Though the polymer and direct methanol based electrolyte are much suitable, for versatile applications (portable devices) they are having major challenges such as design, platinum based catalyst, lower power density and fuel flexibility (free from hydrocarbons). However, in SOFC the high operating temperature is the only major issue. Operating temperature of SOFC could be reduced by proper selection of electrolyte material which should have minimum ionic conductivity of 0.1 Scm -1 at reduced activation energy. This can be achieved by thin film based doped cerium oxide electrolyte for SOFC, leads to Intermediate Temperature Solid Oxide Fuel Cell (ITSOFC). In the present work, we focus on the synthesis of cerium oxide and 20 mol % samarium doped cerium oxide (SDC) nanoparticles by co-precipitation method and to synthesis thin films of the same. Pellets of those powders were heat treated at different temperatures and used as targets for e-beam evaporation to fabricate thin film based electrolyte. Stoichiometry of both powders and thin films were confirmed by XRF and EPMA. GIXRD profiles of ceria and SDC thin films are shown below and a preferred orientation effect is observed in SDC films. In SDC films the X-ray peaks have a shift towards lower angles, due to the difference in ionic radii of Ce 4+ and Sm 3+ . The band gap of CeO 2 (2.88 eV) from optical absorption technique indicates the presence of Ce 3+ with Ce 4+ , indirectly shows the concentration of oxygen vacancies which is required for the thin film electrolyte

Study of thin metal films and oxide materials for nanoelectronics applications

OpenAIRE

De Los Santos Valladares, Luis

2012-01-01

Appendix A Pages 132-134 have been removed from this online version of the thesis for publisher copyright reasons. These had contained page images from the cover of Nanotechnology, Vol. 21, Nov 2010 and its corresponding web alert Different types of thin metal films and oxide materials are studied for their potential application in nanoelectronics: gold and copper films, nickel nanoelectrodes, oxide nanograin superconductors, carboxyl ferromagnetic microspheres and graphene oxide...

Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

Energy Technology Data Exchange (ETDEWEB)

Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

2013-01-15

Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

Energy Technology Data Exchange (ETDEWEB)

Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

2017-01-15

Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

Directory of Open Access Journals (Sweden)

Maryam Siadat

2009-11-01

Full Text Available Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2, tungsten oxide (WO3 and indium oxide (In2O3 were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD. The morphology studied with scanning electron microscopy (SEM and atomic force microscopy (AFM shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm at low operating temperatures (100 and 200 °C and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500 followed by WO3 (1200 and In2O3 (75. Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2 or oxidizing (NO2 gases.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho

2017-02-27

Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

Hybrid manganese oxide films for supercapacitor application prepared by sol-gel technique

International Nuclear Information System (INIS)

Chen, Chin-Yi; Wang, Sheng-Chang; Tien, Yue-Han; Tsai, Wen-Ta; Lin, Chung-Kwei

2009-01-01

Hybrid films were prepared by adding various concentrations of meso-carbon microbeads (MCMB) during sol-gel processing of manganese oxide films. The heat-treated films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In addition, electrochemical performance of the MCMB-added Mn-oxide hybrid coatings was evaluated by cyclic voltammetry (CV) and compared with its unadded counterpart. Experimental results showed that Mn-oxide films exhibited a mixture of Mn 2 O 3 and Mn 3 O 4 phases. The higher the heat-treatment temperature, the more Mn 2 O 3 can be observed. The specific capacitance of the unadded Mn-oxide electrodes is 209 F/g. Because the MCMB particles provide more interfacial surface area for electrochemical reactions, a significant improvement can be noticed by adding MCMB in Mn-oxide coatings. The 300 o C heat-treated hybrid Mn-oxide coating with a Mn/MCMB ratio of 10/1 exhibits the highest value of 350 F/g, showing a ∼ 170% increase in specific capacitance.

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source

International Nuclear Information System (INIS)

Hwang, Man-Soo; Seob Jeong, Heui; Kim, Won Mok; Seo, Yong Woon

2003-01-01

Multilayer coatings consisting of metal layers sandwiched between transparent conducting oxide layers are widely used for flat panel display electrodes and electromagnetic shield coatings for plasma displays, due to their high electrical conductivity and light transmittance. The electrical and optical properties of these multilayer films depend largely on the surface characteristics of the transparent conducting oxide thin films. A smoother surface on the transparent conducting oxide thin films makes it easier for the metal layer to form a continuous film, thus resulting in a higher conductivity and visible light transmittance. Indium tin oxide (ITO) and zinc oxide (ZnO) films were co-deposited using a dual magnetron sputter and a bipolar pulse power supply to decrease the surface roughness of the transparent conducting oxide films. The symmetric pulse mode of the power supply was used to simultaneously sputter an In 2 O 3 (90 wt %) : SnO 2 (10 wt %) target and a ZnO target. We varied the duty of the pulses to control the ratio of ITO : ZnO in the thin films. The electrical and optical properties of the films were studied, and special attention was paid to the surface roughness and the crystallinity of the films. By co-depositing ITO and ZnO at a pulse duty ratio of ITO:ZnO=45:45 using a dual magnetron sputter and a bipolar pulse power supply, we were able to obtain amorphous transparent conducting oxide films with a very smooth surface which had a Zn-rich buffer layer under a In-rich surface layer. All of the films exhibited typical electrical and optical properties of transparent conducting oxide films deposited at room temperature

The influence of nitrogen and oxygen additions on the thermal characteristics of aluminium-based thin films

Energy Technology Data Exchange (ETDEWEB)

Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Macedo, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Couto, F.M. [Physics Sciences Laboratory, Norte Fluminense State University, 28013-602 Campos–RJ (Brazil); Rodrigues, M.S.; Lopes, C. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Pedrosa, P. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Universidade do Porto, Faculdade de Engenharia, Departamento de Engenharia Metalúrgica e de Materiais, Rua Dr. Roberto Frias, s/n, 4200-465 Porto (Portugal); Polcar, T. [Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Engineering Materials & nCATS, FEE, University of Southampton, Highfield Campus, SO17 1BJ, Southampton (United Kingdom); Marques, L.; Vaz, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

2015-08-01

The ternary aluminium oxynitride (AlN{sub x}O{sub y}) system offers the possibility to obtain a wide range of properties by tailoring the ratio between pure Al, AlN{sub x} and AlO{sub y} and therefore opening a significant number of possible applications. In this work the thermal behaviour of AlN{sub x}O{sub y} thin films was analysed by modulated infrared radiometry (MIRR), taking as reference the binary AlO{sub y} and AlN{sub x} systems. MIRR is a non-contact and non-destructive thermal wave measurement technique based on the excitation, propagation and detection of temperature oscillations of very small amplitudes. The intended change of the partial pressure of the reactive gas (N{sub 2} and/or O{sub 2}) influenced the target condition and hence the deposition characteristics which, altogether, affected the composition and microstructure of the films. Based on the MIRR measurements and their qualitative and quantitative interpretation, some correlations between the thermal transport properties of the films and their chemical/physical properties have been found. Furthermore, the potential of such technique applied in this oxynitride system, which present a wide range of different physical responses, is also discussed. The experimental results obtained are consistent with those reported in previous works and show a high potential to fulfil the demands needed for the possible applications of the systems studied. They are clearly indicative of an adequate thermal response if this particular thin film system is aimed to be applied in small sensor devices or in electrodes for biosignal acquisition, such as those for electroencephalography or electromyography as it is the case of the main research area that is being developed in the group. - Highlights: • AlN{sub x}, AlO{sub y} and AlN{sub x}O{sub y} films were deposited by magnetron sputtering. • Discharge characteristics were compared between systems. • Different x and y coefficients were obtained. �

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

International Nuclear Information System (INIS)

Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-01-01

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Oxide films on magnesium and magnesium alloys

International Nuclear Information System (INIS)

Shih, T.-S.; Liu, J.-B.; Wei, P.-S.

2007-01-01

Magnesium alloys are very active and readily ignite during heating and melting. In this study, we discuss the combustion of magnesium and magnesium alloys and propose prospective anti-ignition mechanisms for magnesium alloys during the heating process. When magnesium and magnesium alloys were heated in air, the sample surfaces produced layers of thermally formed oxides. These thermally formed oxides played an important role in affecting the combustion of the magnesium and magnesium alloys. When magnesium was heated in air, brucite that formed in the early stage was then transformed into periclase by dehydroxylation. By extending the heating time, more periclase formed and increased in thickness which was associated with microcracks formation. When magnesium was heated in a protective atmosphere (SF 6 ), a film of MgF 2 formed at the interface between the oxide layer and the Mg substrate. This film generated an anti-ignition behavior which protected the substrate from oxidation. When solution-treated AZ80 alloy was heated, spinel developed at the interface between the thermally formed oxide layer and the Mg substrate, improving the anti-ignition properties of the substrate. In addition, we also explain the effects of beryllium in an AZB91 alloy on the ignition-proofing behavior

Local electrical properties of thermally grown oxide films formed on duplex stainless steel surfaces

Science.gov (United States)

Guo, L. Q.; Yang, B. J.; He, J. Y.; Qiao, L. J.

2018-06-01

The local electrical properties of thermally grown oxide films formed on ferrite and austenite surfaces of duplex stainless steel at different temperatures were investigated by Current sensing atomic force microscopy, X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The current maps and XPS/AES analyses show that the oxide films covering austenite and ferrite surfaces formed at different temperatures exhibit different local electrical characteristics, thickness and composition. The dependence of electrical conductivity of oxide films covering austenite and ferrite surface on the formation temperature is attributed to the film thickness and semiconducting structures, which is intrinsically related to thermodynamics and kinetics process of film grown at different temperature. This is well elucidated by corresponding semiconductor band structures of oxide films formed on austenite and ferrite phases at different temperature.

Picosecond laser registration of interference pattern by oxidation of thin Cr films

Energy Technology Data Exchange (ETDEWEB)

Veiko, Vadim; Yarchuk, Michail [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Zakoldaev, Roman, E-mail: zakoldaev@gmail.com [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation); Gedvilas, Mindaugas; Račiukaitis, Gediminas [Center for Physical Sciences and Technology, Savanoriu Ave. 231, LT-02300, Vilnius (Lithuania); Kuzivanov, Michail; Baranov, Alexander [ITMO University, Kronverksky Ave. 49, St. Petersburg, 197101 (Russian Federation)

2017-05-15

Highlights: • Periodical patterning of thin films was achieved by combining two technologies. • Selective chemical etching was combined with laser-induced oxidation. • Formation of the protective oxide layer prevented of chromium film from etching. • 1D binary grating with the chromium stripe width of 750 nm was fabricated. - Abstract: The laser oxidation of thin metallic films followed by its selective chemical etching is a promising method for the formation of binary metal structures on the glass substrates. It is important to confirm that even a single ultrashort laser pulse irradiation is able to create the protective oxide layer that makes possible to imprint the thermochemical image. Results of the thermo-chemical treatment of thin chromium films irradiated by picosecond laser pulse utilizing two and four beam interference combined with the chemical etching are presented. The spatial resolution of this method can be high enough due to thermo-chemical sharpening and can be close to the diffraction limit. Micro-Raman spectroscopy was applied for characterization of the chemical composition of the protective oxide layers formed under atmospheric conditions on the surface of thin chromium films.

Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

International Nuclear Information System (INIS)

Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

2014-01-01

Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

Transparent conducting AZO and ITO films produced by pulsed laser ablation at 355 nm

DEFF Research Database (Denmark)

Thestrup, B.; Schou, Jørgen

1999-01-01

Thin films of aluminium-doped zinc oxide (AZO) and indium tin oxide (ITO) were deposited on glass substrates by laser ablation in an oxygen environment. The electrical and optical properties of films grown at various oxygen pressures were compared. With no substrate heating, highly transparent...... and conducting films were obtained with oxygen pressures between 15 and 23 mTorr for both materials. We obtained a specific resistivity of 1.8 x 10(-3) Omega cm for AZO and 1.1 x 10(-3) Omega cm for ITO. By heating the substrate to 160 degrees C or 200 degrees C, the resistivity was further reduced to 1.1 x 10......(-3) Omega cm for AZO and 3.9 x 10(-4) Omega cm for ITO. The average transmission of visible light (450-750 MI) was between 82% and 98% in most cases. The results suggest that AZO is a promising alternative to ITO....

Effect of thermal annealing of lead oxide film

International Nuclear Information System (INIS)

Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

2011-01-01

Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

Degradation of zinc oxide thin films in aqueous environment. Pt. II. Coated films

Energy Technology Data Exchange (ETDEWEB)

Rosa, L. de; Mitton, D.B.; Monetta, T.; Bellucci, F. [Naples Univ. (Italy). Dept. of Materials and Production Engineering; Springer, J. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2001-12-01

cn Part I of this research, the degradation mechanism of two different bare ZnO thin films was assessed. Degradation of the electrical properties of ZnO as well as changes in morphology were observed for both films. In the current paper, the degradation of zinc oxide thin films coated with protective acrylic paint is addressed during exposure to (i) an aqueous 3.5% NaCl solution at 85 C and (ii) a standard damp heat test at 85% R.H. and 85 C. Electrical and electrochemical techniques were employed to monitor zinc oxide degradation during exposure to the test environments. Electrochemical Impedance Spectroscopy was employed to investigate the delamination phenomena at the ZnO/coating interface and a simple equivalent circuit was developed to quantitatively measure the delamination ratio. The effect of different silane based adhesion promoters (glycidil-oxypropyl-trimethoxy-silane and aminopropyl-trimethoxy-silane) was also investigated. (orig.)

Metallic oxide switches using thick film technology

Science.gov (United States)

Patel, D. N.; Williams, L., Jr.

1974-01-01

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Fabrication of birnessite-type layered manganese oxide films for super capacitors

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.K.; Dorval-Douville, G.; Favier, F. [Montpellier-2 Univ., LAMMI, UMR CNRS 5072, 34 (France)

2004-07-01

Birnessite-type layered manganese oxide films were anodically deposited at the surface of an inexpensive stainless steel. MnSO{sub 4} plating solutions were used at various potentials and for various durations. X-ray diffraction and scanning electron microscopy were used to examine the material structure and surface morphologies of obtained manganese oxide films. The capacitive characteristics and stability of these oxides were systematically investigated by means of cyclic voltammetry method in aqueous electrolytes. Deposition conditions affected the oxides structure and morphologies, and consequently greatly affected their electrochemical capacitance performance. (authors)

Electrodeposition of Manganese-Nickel Oxide Films on a Graphite Sheet for Electrochemical Capacitor Applications

Directory of Open Access Journals (Sweden)

Hae-Min Lee

2014-01-01

Full Text Available Manganese-nickel (Mn-Ni oxide films were electrodeposited on a graphite sheet in a bath consisting of manganese acetate and nickel chloride, and the structural, morphological, and electrochemical properties of these films were investigated. The electrodeposited Mn-Ni oxide films had porous structures covered with nanofibers. The X-ray diffractometer pattern revealed the presence of separate manganese oxide (g-MnO2 and nickel oxide (NiO in the films. The electrodeposited Mn-Ni oxide electrode exhibited a specific capacitance of 424 F/g in Na2SO4 electrolyte. This electrode maintained 86% of its initial specific capacitance over 2000 cycles of the charge-discharge operation, showing good cycling stability.

Swelling of a mesostructured zirconium oxide film

Energy Technology Data Exchange (ETDEWEB)

Henderson, M.J. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); Rennie, A.R. [Uppsala University, Studsvik Neutron Research Laboratory, S-611 82 Nykoeping (Sweden); Hawley, A.M. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia); White, J.W. [Research School of Chemistry, Australian National University, Canberra, ACT 0200 (Australia)]. E-mail: jww@rsc.anu.edu.au

2006-11-15

The structural changes that cause the change in interlayer spacing of a surfactant-templated zirconium oxide film have been studied using neutron diffractometry. We report that the film after drying on a glass substrate swells slightly through the addition of benzene by up to 4 A on a lattice parameter of about 36 A. The (0 0 1) and (0 0 2) diffraction peak widths, positions and areas of a swollen film were monitored as a function of benzene desorption. Disorder of the lamellar mesophase is considered as a cause of the observed effects on the diffraction signals.

Quantum confinement effect in Bi anti-dot thin films with tailored pore wall widths and thicknesses

International Nuclear Information System (INIS)

Park, Y.; Hirose, Y.; Fukumura, T.; Hasegawa, T.; Nakao, S.; Xu, J.

2014-01-01

We investigated quantum confinement effects in Bi anti-dot thin films grown on anodized aluminium oxide templates. The pore wall widths (w Bi ) and thickness (t) of the films were tailored to have values longer or shorter than Fermi wavelength of Bi (λ F  = ∼40 nm). Magnetoresistance measurements revealed a well-defined weak antilocalization effect below 10 K. Coherence lengths (L ϕ ) as functions of temperature were derived from the magnetoresistance vs field curves by assuming the Hikami-Larkin-Nagaoka model. The anti-dot thin film with w Bi and t smaller than λ F showed low dimensional electronic behavior at low temperatures where L ϕ (T) exceed w Bi or t

Anodic luminescence, structural, photoluminescent, and photocatalytic properties of anodic oxide films grown on niobium in phosphoric acid

Energy Technology Data Exchange (ETDEWEB)

Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia)

2015-11-15

Graphical abstract: - Highlights: • Anodic luminescence is correlated to the existence of morphological defects in the oxide. • Spectrum under spark discharging reveals only oxygen and hydrogen lines. • Oxide films formed under spark discharging are crystallized and composed of Nb{sub 2}O{sub 5}. • Photocatalytic activity and photoluminescence of Nb{sub 2}O{sub 5} films increase with time. - Abstract: This article reports on properties of oxide films obtained by anodization of niobium in phosphoric acid before and after the dielectric breakdown. Weak anodic luminescence of barrier oxide films formed during the anodization of niobium is correlated to the existence of morphological defects in the oxide layer. Small sized sparks generated by dielectric breakdown of formed oxide film cause rapid increase of luminescence intensity. The luminescence spectrum of obtained films on niobium under spark discharging is composed of continuum radiation and spectral lines caused by electronic spark discharging transitions in oxygen and hydrogen atoms. Oxide films formed before the breakdown are amorphous, while after the breakdown oxide films are partly crystalline and mainly composed of Nb{sub 2}O{sub 5} hexagonal phase. The photocatalytic activity of obtained oxide films after the breakdown was investigated by monitoring the degradation of methyl orange. Increase of the photocatalytic activity with time is related to an increase of oxygen vacancy defects in oxide films formed during the process. Also, higher concentration of oxygen vacancy defects in oxide films results in higher photoluminescence intensity.

Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization

Science.gov (United States)

Martinson, Alex B.; Kim, In Soo

2017-09-26