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Sample records for aluminium oxide films

  1. Nanostructure of aluminium (Al) - Doped zinc oxide (AZO) thin films

    Science.gov (United States)

    Hussin, Rosniza; Husin, M. Asri

    2017-12-01

    Aluminium (Al)-doped Zinc Oxide (ZnO) was deposited on glass substrates by using the sol-gel dip coating technique. Next, AZO sol-gel solution was produced via sol-gel method. Al was used as doped element with molar ratios of 1%, 2%, and 3%, while the calcination temperatures were set at 400°C, 500°C, and 600°C for 2 hours. In fact, characterization was carried out in order to determine the effect of calcination temperature and molar ratio of doping by using several techniques, such as X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), and Ultraviolet-Visible spectroscopy (UV-Vis). XRD was performed to investigate the crystal structure in which the ZnO was in wurtzite hexagonal form. Next, Energy Dispersive Spectroscopy (EDS) was used to determine the composition of thin films where the result revealed the existence of zinc, oxygen, and aluminium. The roughness of the deposited film was later measured by using the AFM approach where the findings indicated increment in RMS from 8.496 nm to 35.883 nm as the temperature was increased. Additionally, FESEM was carried out to look into the microstructure surfaces of the deposited AZO thin film for increased temperature caused the particle to grow bigger for all molar ratio of dopant. Lastly, UV-Vis was conducted to study the optical properties of AZO, in which the result demonstrated that AZO thin film possessed the highest transmittance percentage among all samples above 90% with band gap value that ranged from 3.25 eV to 3.32 eV.

  2. Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

    International Nuclear Information System (INIS)

    Foerster, H.

    1983-01-01

    A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

  3. Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation

    International Nuclear Information System (INIS)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L.

    2002-01-01

    By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

  4. Characterization of steam generated anti-corrosive oxide films on Aluminium alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

    2014-01-01

    Aluminium and its alloys are widely used in structural and transportation industry owing to their high strength to weight ratio. The surface of aluminium under normal conditions has a thin oxide film (2.5-10 nm) responsible for its inherent corrosion resistance. This oxide film can further...... be converted or transformed into functional conversion coatings in order to enhance corrosion resistance and adhesion to paint systems. Chromium based conversion coatings have been extensively used on aluminium alloys to improve adhesion of subsequent paint layers and corrosion resistance. However, the use...... chemical additives on surface morphology and growth of oxide film on different intermetallic particles and corrosion behaviour of such alloys.Surface morphology was observed by using FEG-SEM, EDX and FIB-SEM. Metal oxide surface characterization and compositional depth profiling were investigated by using...

  5. FIB-SEM investigation of trapped intermetallic particles in anodic oxide films on AA1050 aluminium

    DEFF Research Database (Denmark)

    Jariyaboon, Manthana; Møller, Per; Dunin-Borkowski, Rafal E.

    2011-01-01

    Purpose - The purpose of this investigation is to understand the structure of trapped intermetallics particles and localized composition changes in the anodized anodic oxide film on AA1050 aluminium substrates. Design/methodology/approach - The morphology and composition of Fe-containing intermet...

  6. Thermoluminescent characterization of thin films of aluminium oxide irradiated with beta particles

    International Nuclear Information System (INIS)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.

    2002-01-01

    By means of the laser ablation technique has been settled thin films of aluminium oxide on kapton substrates. These films present thermoluminescent response (Tl) when being exposed to beta radiation of a Sr 90 - Y 90 source (E max = 2.28 MeV). The brilliance curves show two peaks, one of them in 112 C degrees and the other one in 180 C degrees. The peak of low temperature is faded in some hours, whereas the high temperature one is more stable, showing a fading in the 15% order after three days of the irradiation. The Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGDC). The results show that the high temperature peak is composed by four peaks which obey a second order kinetics with their maximum located at 165.7, 188.1, 215.3, and 246.5 C degrees. The depth of the traps (E) has values in the interval between 1.4 and 2.0 eV. The study of the dose response relation, show that the material presents a linear behavior in a dose interval from 150 mGy to 50 Gy. The obtained thin films of aluminium oxide could be a useful tool due to their potential applications in clinical dosimetry, in the determination of distributions of doses produced by penetrating weakly radiation, as well as in interfaces dosimetry. (Author)

  7. Investigation of optical properties of aluminium oxide doped polystyrene polymer nanocomposite films

    Science.gov (United States)

    Bhavsar, Shilpa; Patel, Gnansagar B.; Singh, N. L.

    2018-03-01

    In the present work, a simple solution casting method was utilized to synthesize aluminium oxide (Al2O3) doped polystyrene (PS) polymer nanocomposite films. As synthesized films were characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, ultra violet (UV)-visible spectroscopy, photoluminescence (PL) method and scanning electron microscopy (SEM). The crystalline nature of the films was found to decrease after incorporation of filler in the polymer matrix as revealed by XRD results. A new carbonyl group was appeared in the FTIR spectra and confirmed the charge transfer reaction between filler and polymer matrix. The decrease in the band gap was found with the filler concentration in the synthesized polymer nanocomposite films. Photoluminescence emission spectra of nanocomposites were observed at 411 nm, 435 nm and 462 nm, respectively in violet-blue region which indicates interaction between the dopant and the polymer matrix. The PL emission spectra of polymer nanocomposite films with 3 wt% of Al2O3 filler exhibited higher peak intensity. The Al2O3 filler dispersion is found to reduce band gap and promote luminescence property in polystyrene. SEM analysis indicates the agglomeration of Al2O3 nanoparticles into PS matrix at higher concentration.

  8. Effects of aluminium doping on zinc oxide transparent thin films grown by filtered vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gontijo, L.C., E-mail: pleooog@gmail.com [Instituto Federal do Espirito Santo, Programa de Pos-Graduacao em Engenharia Metalurgica e de Materiais, Av. Vitoria, 1729, Jucutuquara, 29040-780, Vitoria, ES (Brazil); Machado, R., E-mail: rogerio.machado.2l@gmail.com [Universidade Federal de Sergipe, Departamento de Fisica, Rod. Mal Rondon S/N, Jd Rosa Elze, CEP 49.100-000, Sao Cristovao, SE (Brazil); Nascimento, V.P., E-mail: valberpn@yahoo.com.br [Universidade Federal do Espirito Santo, Departamento de Fisica, Av. Fernando Ferrari, 514 Goiabeiras, CEP 29075-910, Vitoria, ES (Brazil)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer AZO films prepared by filtered vacuum arc deposition. Black-Right-Pointing-Pointer Systematic variation of Al concentration. Black-Right-Pointing-Pointer Structural, electrical and optical properties analyzed. Black-Right-Pointing-Pointer Optimized system for Al concentration between 4% and 6%. - Abstract: Thin n-type ZnO films doped with different atomic concentrations of aluminium were grown by filtered vacuum arc deposition (FVAD) on glass substrates. The films were deposited using an oxygen working pressure of 2.0 mTorr with an arc current running at two 100 ms pulses s{sup -1}. Structural, optical and electrical properties were investigated to understand the effect of Al doping on ZnO films. The best values were found for an ideal aluminium percentage between 4 and 6 at.%.

  9. Steam Assisted Accelerated Growth of Oxide Layer on Aluminium Alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Yuksel, Serkan; Jellesen, Morten Stendahl

    2013-01-01

    Corrosion resistance of aluminium alloys is related to the composition and morphology of the oxide film on the surface of aluminium. In this paper we investigated the use of steam on the surface modification of aluminium to produce boehmite films. The study reveals a detailed investigation...... of the effect of vapour pressure, structure of intermetallic particles and thickness of boehmite films on the corrosion behaviour of aluminium alloys....

  10. High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

    2014-09-01

    Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

  11. Self-sealing of unsealed aluminium anodic oxide films in very different atmospheres

    Directory of Open Access Journals (Sweden)

    González, J. A.

    2003-12-01

    Full Text Available It is widely believed that the corrosion resistance behaviour of bare aluminium in natural environments is superior to that of unsealed anodised aluminium. However, results obtained in the exposure of unsealed anodised aluminium specimens with three different film thicknesses, in 9 atmospheres of Ibero-America with salinity levels between 3.9 and 517 mg.m-2.d-1 chloride, clearly shows the reverse to be true. After a sufficient time, which is shorter the higher the precipitation rate and the environmental relative humidity, a self-sealing process takes place, leading to coatings that surpass the quality standards demanded in industrial practice. Anodic films, sealed and unsealed, are protective coatings whose quality improves with ageing in most natural environments.

    Está muy difundida la idea de que el comportamiento del aluminio es superior al del aluminio anodizado y sin sellar, desde el punto de vista de la resistencia a la corrosión, en los ambientes naturales. Sin embargo, los resultados obtenidos en la exposición de anodizados sin sellar, de tres espesores diferentes, a 9 atmósferas de Iberoamérica, con salinidades comprendidas entre 3,9 y 517 mg.m-2.d-1 de cloruros, muestran, sin lugar a dudas, lo contrario. Con tiempo suficiente, tanto más rápidamente cuanto mayor sean las precipitaciones y la humedad relativa ambiental, tiene lugar un proceso de autosellado que conduce a recubrimientos que superan las normas de calidad exigidas en la práctica industrial. Los anodizados, sellados y sin sellar, son recubrimientos protectores que mejoran su calidad, en la mayoría de los ambientes naturales, con el envejecimiento.

  12. Carbonaceous alumina films deposited by MOCVD from aluminium ...

    Indian Academy of Sciences (India)

    Spectroscopic ellipsometry was used to characterize carbonaceous, crystalline aluminium oxide films grown on Si(100) by low-pressure metal organic chemical vapour deposition, using aluminium acetylacetonate as the precursor. The presence of carbon in the films, attribured to the use of a metalorganic precursor for the ...

  13. Accelerated growth of oxide film on aluminium alloys under steam: Part II: Effects of alloy chemistry and steam vapour pressure on corrosion and adhesion performance

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Bordo, Kirill; Jellesen, Morten Stendahl

    2015-01-01

    The steam treatment of aluminium alloys with varying vapour pressure of steamresulted in the growth of aluminium oxyhydroxide films of thickness range between 450 - 825nm. The surface composition, corrosion resistance, and adhesion of the produced films was characterised by XPS, potentiodynamic...... polarization, acetic acid salt spray, filiform corrosion test, and tape test. The oxide films formed by steam treatment showed good corrosion resistance in NaCl solution by significantly reducing anodic and cathodic activities. The pitting potential of the surface treated with steam was a function...... of the vapour pressure of the steam. The accelerated corrosion and adhesion tests on steam generated oxide films with commercial powder coating verified that the performance of the oxide coating is highly dependent on the vapour pressure of the steam....

  14. Zirconium-based conversion film formation on zinc, aluminium and magnesium oxides and their interactions with functionalized molecules

    Science.gov (United States)

    Fockaert, L. I.; Taheri, P.; Abrahami, S. T.; Boelen, B.; Terryn, H.; Mol, J. M. C.

    2017-11-01

    Zirconium-based conversion treatment of zinc, aluminium and magnesium oxides have been studied in-situ using ATR-FTIR in a Kretschmann geometry. This set-up was coupled to an electrochemical cell, which allowed to obtain chemical and electrochemical information simultaneously as a function of conversion time. This elucidated the strong relation between physico-chemical surface properties and zirconium-based conversion kinetics. Whereas the surface hydroxyl density of zinc and aluminium increased during conversion, magnesium (hydr)oxide was shown to dissolve in the acid solution. Due to this dissolution, strong surface alkalization can be expected, explaining the rapid conversion kinetics. AES depth profiling was used to determine the final oxide thickness and elemental composition. This confirmed that magnesium is most active and forms a zirconium oxide layer approximately 10 times thicker than zinc. On the other hand, the presence of zirconium oxide on aluminium is very low and can be considered as not fully covering the metal oxide. Additionally, the converted oxide chemistry was related to the bonding mechanisms of amide functionalized molecules using ATR-FTIR and XPS. It was shown that inclusion of zirconium altered the acid-base properties, increasing the substrate proton donating capabilities in case of magnesium oxide and increasing hydrogen bonding and Bronsted interactions due to increased surface hydroxide fractions on zinc and aluminium substrates.

  15. Conical tungsten stamps for the replication of pore arrays in anodic aluminium oxide films

    Science.gov (United States)

    LeClere, D. J.; Thompson, G. E.; Derby, B.

    2009-06-01

    A tungsten master stamp has been generated by applying a novel procedure that includes two-step anodizing, followed by sequential anodizing and pore widening to develop nominally funnelled pores. These conical-shaped pores were filled with tungsten by sputter coating to manufacture a master stamp. Under a pressure of 65 MPa, the master stamp successfully embossed the surface of annealed and electropolished aluminium. The embossed surface was then used to control the position of pores created by anodizing under the conditions used to produce the original pore array.

  16. Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021 (India); Mehra, R.M., E-mail: rammehra2003@yahoo.co [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021 (India)

    2010-05-03

    ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 {sup o}C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.

  17. Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

    International Nuclear Information System (INIS)

    Sharma, Mamta; Mehra, R.M.

    2010-01-01

    ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 o C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.

  18. Thermoluminescent characterization of thin films of aluminium oxide submitted to beta and gamma radiation; Caracterizacion termoluminiscente de peliculas delgadas de oxido de aluminio sometidas a radiacion beta y gamma

    Energy Technology Data Exchange (ETDEWEB)

    Villagran, E.; Escobar A, L.; Camps, E.; Gonzalez, P.R.; Martinez A, L. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    2002-07-01

    By mean of the laser ablation technique, thin films of aluminium oxide have been deposited on kapton substrates. These films present thermoluminescent response (Tl) when they are exposed to beta and gamma radiation. The brilliance curves show two peaks between 112 C and 180 C. A dose-response relationship study was realized and the Tl kinetic parameters were determined using the computerized deconvolution of the brilliance curve (CGCD). The thin films of aluminium oxide have potential applications as ultra.thin radiation dosemeters. (Author)

  19. Accelerated growth of oxide film on aluminium alloys under steam: Part I: Effects of alloy chemistry and steam vapour pressure on microstructure

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Gudla, Visweswara C.; Jellesen, Morten S.

    2015-01-01

    of the oxide layeras well as the compactness increased with steam vapour pressure. The increase in vapour pressure also resulted in a better coverage over the intermetallic particles. Oxide layer showed a layered structure with more compact layer at the Al interface and a nano-scale needle like structure...... of alkaline etching pre-treatment influenced the thickness and growth of theoxide. Moreover the steam treatment resulted in the partial oxidation of second phase intermetallic particles present in the aluminium alloy microstructure....

  20. Decomposition of oxidezed lead and aluminium thin films on molybdenum substrates

    International Nuclear Information System (INIS)

    Makarovskij, N.A.

    1981-01-01

    The decomposition of oxidized solid phase lead and aluminium thin films on molybdenum substrates in the process of diffusion annealing in the 5x10 -5 mm Hg vacuum at temperatures from 280 to 320 deg C and from 500 to 560 deg C, respectively, is investigated. The conclusion is made that failure of oxidized lead and aluminium thin film coatings is carried out by the mechanism of volumetric self-diffusion. Experimentally established values of activation energies of the process of lead (Qsub(Mo)sup(Pb)=29 kcal/mol) and aluminium (Qsub(Mo)sup(Al)=35 kcal/mol) film failure are close to corresponding activation energies of lead and aluminium volumetric self-diffusion, which agrees with the conclusions made [ru

  1. Oxide film on 5052 aluminium alloy: Its structure and removal mechanism by activated CsF-AlF3 flux in brazing

    Science.gov (United States)

    Xiao, Bing; Wang, Dongpo; Cheng, Fangjie; Wang, Ying

    2015-05-01

    The oxide-film structure on the 5052 Al alloy and the film-removal mechanism by activated CsF-AlF3 flux in brazing were studied. Characterisation of the oxide film shows that thermally activated Mg, segregated from the alloy's interior, was significantly enriched and oxidised during medium-temperature brazing. Thus, the outer oxide surface consisted of the amorphous MgO-like phase, and the interior of the oxide film comprised mainly the amorphous MgO-like phase and dispersely distributed and less-ordered MgAl2O4. The MgO-like phase was the main obstacle to oxide removal in brazing. The activated ZnCl2-containing CsF-AlF3 flux effectively removed the oxide film, and the 5052 Al alloy was successfully brazed by the Zn-Al filler metal and activated flux. When Zn2+ in the molten flux permeated the oxide film through cracks, its chemical reaction with the Al substrate loosened the oxide film, which was eventually pushed out as the filler metal spread over the alloy surface.

  2. Thin-film cryogenic resistors from aluminium alloys

    Science.gov (United States)

    Tadros, N. N.; Holdeman, L. B.

    The temperature dependence of the resistances of thin films sputtered from three commercially available aluminium alloys (5052, 5086, 5456) has been measured in the temperature range 1.5-4.2 K. The 5052-alloy films had a positive temperature coefficient of resistance (TCR) throughout this temperature range, whereas films of the other two alloys had a negative TCR.

  3. Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

    Science.gov (United States)

    Grove, C. A.; Judd, G.; Ansell, G. S.

    1972-01-01

    Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

  4. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Martínez-Tong, Daniel E. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Sanz, Mikel; Oujja, Mohamed; Marco, José F. [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Ezquerra, Tiberio A. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Castillejo, Marta [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain)

    2016-11-30

    Highlights: • IR pulsed laser ablation of aluminium gives rise to smooth layers of several tens of nanometers. • Irradiation at fluences around 2.7 J/cm{sup 2} and above 7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films and metallic aluminium films respectively. • Highly ionized species are more abundant in the ablation plumes generated at higher fluences. • It is possible to control by PLD the metal or dielectric character of the films. - Abstract: We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I–V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm{sup 2}, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  5. Development of EL element by ion implanting into aluminium film

    Energy Technology Data Exchange (ETDEWEB)

    Maeno, Tomokazu; Tanizaki, Yoshiyuki [Tokyo Metropolitan Industrial Technology Research Inst. (Japan); Morisaki; Shigeki

    1999-01-01

    Rare earth elements were added to a barrier type anodized aluminium film by an ion implantation method, and then the film was reoxidized with direct current. EL characteristic properties by adding elements were observed by reoxidation. Red, blue and green were shown by adding Eu, Tm and Tb, respectively. The EL characteristics of barrier type film were affected by the surface pretreatment. The film treated with degreasing showed that the EL intensity increased much more from lower reanodizing voltage than that of film treated with electropolishing. The film with some elements showed each peculiar color without interference. So that we can see the mixed colors of them. (S.Y.)

  6. Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part II corrosion performance

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

    2015-01-01

    Surface treatment of aluminium alloys using steam with oxidative chemistries, namely KMnO4 and HNO3 resulted in accelerated growth of oxide on aluminium alloys. Detailed investigation of the corrosion performance of the treated surfaces was carried out using potentiodynamic polarisation...... and standard industrial test methods such as acetic acid salt spray (AASS) and filiform corrosion on commercial AA6060 alloy. Barrier properties of the film including adhesion were evaluated using tape test under wet and dry conditions. Electrochemical results showed reduced cathodic and anodic activity, while...... the protection provided by steam treatment with HNO3was a function of the concentration of NO3−ions. The coating generated by inclusion of KMnO4showed highest resistance to filiform corrosion. Overall, the performance of the steam treated surfaces under filiform corrosion and AASS test was a result of the local...

  7. Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Araiza, J J [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Paseo a la Bufa esq, Calzada Solidaridad s/n 98060, Zacatecas (Mexico); Sanchez, O [Departamento de Fisica e Ingenieria de Superficies, Instituto de Ciencia de Materiales de Madrid-CSIC, C/ Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain)], E-mail: olgas@icmm.csic.es

    2009-06-07

    We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr{sub 3}N{sub 4} (2 1 1) and hexagonal AlN (1 0 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and AlN, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrAlN films.

  8. TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

    Directory of Open Access Journals (Sweden)

    Silvia Maioco

    2013-03-01

    Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

  9. Development of cerium oxide and nickel oxide-incorporated aluminium matrix for marine applications

    International Nuclear Information System (INIS)

    Ashraf, P. Muhamed; Shibli, S.M.A.

    2009-01-01

    The present study signifies the role of nickel oxide along with cerium oxide on barrier protection of aluminium as a metal matrix composite for marine applications. The incorporation of cerium oxide and nickel oxide in pure aluminium had improved the corrosion resistance and microstructure of the composite. A relatively anodic and stable OCP was exhibited throughout the period during long-term evaluation. Both nickel oxide and cerium oxide acted synergistically to reduce corrosion in aluminium. The mechanisms of barrier protection of the composites are discussed predominantly based on extensive impedance analysis. The results signify the scope of potential use of the composite in marine environment.

  10. Freezing of aluminium oxide and iron flowing upward in circular quartz glass tubes

    International Nuclear Information System (INIS)

    Kuhn, D.; Moeschke, M.; Werle, H.

    1983-10-01

    The freezing of aluminium oxide and iron flowing upward in circular quartz glass tubes has been studied in a series of experiments. Several tubes were used in the same test. This demonstrated a good reproducibility and allowed systematic parameter variations, especially of the channel diameter. The time-dependance of the penetration was observed with a film camera and these date provide a good basis for a detailed check of sophisticated models which are in development. (orig.) [de

  11. Transport phenomena of aluminium oxide in metal halide lamps

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, S; Markus, T [Institute for Energy Research, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany); Niemann, U [Philips GmbH, Research Laboratories, PO Box 500145, Aachen, D-52085 (Germany)], E-mail: s.fischer@fz-juelich.de

    2008-07-21

    A better understanding of the transport phenomena observed in metal halide lamps can be achieved using computer-based model calculations. The chemical transport of aluminium oxide in advanced high-pressure discharge vessels was calculated as a function of temperature and composition of the salt mixture relevant to the lamp. Below 1773 K chemical transport is the prevailing process; above this temperature the vaporization and condensation of the envelope material-aluminium oxide-become more important. The results of the calculations show that the amount of transported alumina increases linearly with the number of iteration cycles and exponentially with the temperature gradient.

  12. Columnar structure of reactively sputtered aluminium nitride films

    International Nuclear Information System (INIS)

    Chen Chisan; Hwang Binghwai; Lu Hongyang; Hsu Tzuchien

    2002-01-01

    Columnar structure of thin aluminium nitride (AlN) films is examined by x-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The films were deposited on SiO 2 /Si(100) substrate using radiofrequency reactive sputtering method. Strong [0001] preferred orientation is observed by XRD and confirmed by selected area diffraction pattern of TEM. Columnar grains of ∼50-100 nm inclined at an angle of ∼10 deg. to the substrate normal are observed by SEM. As revealed by TEM, each columnar grain is composed of nano-grains of the order of 10 nm and no faceting is observed in the nano-grains and columns. The [0001] preferred orientation results as columnar grains are oriented at various azimuthal angles with their c-axes perpendicular to the substrate surface. A slight tilt of a few tenths of a degree between adjacent nano-grains within a column is also observed. The random azimuthal orientation of columnar grains and small tilt between nano-grains in the films are accommodated by the amorphous phase present in the grain boundaries

  13. Effects of aluminium oxide nanoparticles on bacterial growth

    Directory of Open Access Journals (Sweden)

    Doskocz Nina

    2017-01-01

    Full Text Available Production and wide application of nanomaterials have led to nanotechnology development but their release to environment and the induction of toxic reactions, affects the natural microbial communities. Therefore, studies on the impact of nanoparticles on microorganisms and environment are required and needed. The aim of this study was to assess the impact of aluminium oxide nanoparticles on the growth of Pseudomonas putida. To compare the harmfulness of different forms of aluminium oxide, the ecotoxicity of its macro-forms was also evaluated in the study. Research showed that the exposure to nanoparticles can negatively influence microorganisms. The EC50-16h determined in this study was 0.5 mg/l, and NOEC equaled 0.19 mg/l. Nano-Al2O3 proved to be more toxic to P. putida than aluminium oxide. This indicates that the nano-form of a given substance demonstrates different properties and may constitute a far greater danger for the environment than the same substance in the large form. According to EU and US EPA criteria, nano-Al2O3 proved to be very toxic and highly toxic, respectively. Changes in bacterial communities caused by nanoparticles may affect the normal biological, chemical and nutrient cycle in the ecosystem and the effect triggered by nanomaterials in relation to other organisms is unpredictable.

  14. Development and characterization of ultra-thin dosemeters of aluminium oxide

    International Nuclear Information System (INIS)

    Villagran V, E.

    2003-01-01

    The aim of the present thesis work has been to investigate the thermoluminescent (Tl) response of aluminium oxide thin films with thicknesses of the order of 300 nm prepared by laser ablation. Aluminium oxide thin films show Tl response after they are subject to ultraviolet, beta and gamma radiation. The Tl curves exhibit peaks around 75 C and 169 C for UV radiation, 112 C and 180 C for beta particles and 110 C and 176 C for gamma radiation. In order to improve the Tl response some growth parameters such as power density and distance target-substrate were varied. The relation dose-response shows a non-linear behavior for UV irradiation; a linear behavior for beta-particles dose from 150 mGy to 50 Gy, and a linear behavior for gamma radiation dose from 5 Gy to 100 Gy. The kinetic Tl parameters were determined by Computerized Glow Curve Deconvolution (CGCD) method as well as using analytical methods. The CGCD results show that the high temperature peak is composed by four peaks with maximums in 165.7, 188.1, 215.3, 246.5 C. These obey a second order kinetics. The trap depth (E) values are 1.4, 1.6, 1.8 and 2.0 eV respectively. The different analytical results show a trap depth values of 0.914, 0.82 and 0.656 eV respectively. Oxide aluminium thin films obtained would be a suitable tool owing to their potential applications in clinical dosimetry, in the dose distributions due to weekly penetrating radiation determination, and in interfaces dosimetry. (Author)

  15. Adsorption of lithium ion to amorphous hydrous aluminium oxide

    International Nuclear Information System (INIS)

    Wada, Hideo; Kitamura, Takao; Fujii, Ayako; Katoh, Shunsaku

    1982-01-01

    Adsorption process of lithium ion to amorphous hydrous aluminium oxide (a-HAO) was investigated by pH titration method with lithium chloride-lithium hydroxide mixed solution and X-ray diffraction analysis of a-HAO after pH titration. In the pH titration, the addition of hydroxide ion in amount from 0 to 4.0 mmol.g -1 gave no change to the pH of the solution and caused adsorption of lithium ion equivalent in amount to added hydroxide ion. X-ray diffraction analysis showed the formation of lithium hydrogenaluminate LiH (AlO 2 ) 2 .5H 2 O (LHA) in the a-HAO after pH titration. These results showed that adsorption of lithium ion by a-HAO was related to a reaction which consumed hydroxide ion and formed LHA. In order to elucidate detail process of the reaction, changes of pH, aluminium concentration and lithium concentration of the solution, respectively with time, were determined. The pH of the solution decreased in two stages. At the first stage of the pH decrease, the aluminium concentration increased whereas the lithium concentration did not change. At the second stage, the lithium concentration decreased together with the decrease of the aluminium concentration. It was inferred that adsorption of lithium ion proceeded through dissolution of a-HAO and precipitation of LHA. Theoretical adsorption capacity calculated from the above formula for LHA and aluminium content in a-HAO was 4.7 mmol.g -1 and agreed fairly well with observed value 4.0 mmol.g -1 . (author)

  16. Optical and electrical properties of negatively charged aluminium oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Kyungsoo; Jung, Sungwook; Lee, Jeoungin; Lee, Kwangsoo; Kim, Jaehong; Son, Hyukjoo [School of information and communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of); Yi, Junsin [School of information and communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, 440-746 (Korea, Republic of)], E-mail: yi@yurim.ac.kr

    2008-11-03

    Aluminium oxynitride (AlON) thin films were deposited by Radio Frequency (RF) magnetron sputtering on n-type silicon (Si) substrate of (100) orientation using argon (Ar) and oxygen (O{sub 2}) gases at substrate temperature of 450 {sup o}C. To know the change in electrical properties with gases ratio, a deposition was carried out for 140 s with Ar:O{sub 2} ratio changed from 1:3 to 4:3. After that, electrical properties of Metal-Insulator-Semiconductor (MIS) structure with AlON was analyzed. For Ar:O{sub 2} ratios from 1:3 to 4:3, all samples showed characteristics of negative charge. In particular, when Ar:O{sub 2} were 2:3 and 3:3, the value of flatband voltage in normal C-V curve showed above 14 V. The composition of the AlON in the film was investigated using X-ray Photoelectron Spectroscopy (XPS). The flatband voltages (V{sub FB}) in C-V curves were found to depend on compositions. The characteristics of photon energy band gap were obtained by UV/VIS spectrum.

  17. Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part I Microstructural investigation

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Piotrowska, Kamila; Gudla, Visweswara Chakravarthy

    2015-01-01

    The surface treatment of aluminium alloys under steam containing KMnO4 and HNO3resulted in the formation of an oxide layer having a thickness of up to 825 nm. The use of KMnO4 and HNO3 in the steam resulted in incorporation of the respective chemical species into the oxide layer. Steam treatment...... resulting in poor coverage by the steam generated oxide layer compared to the coating formed using MnO4−ions. Further, increase in the concentration of NO3−ions in the solution retards precipitation of the steam generated aluminium hydroxide layer....

  18. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  19. Microstructure and properties of aluminium-aluminium oxide graded composite materials

    Science.gov (United States)

    Kamaruzaman, F. F.; Nuruzzaman, D. M.; Ismail, N. M.; Hamedon, Z.; Iqbal, A. K. M. A.; Azhari, A.

    2018-03-01

    In this research works, four-layered aluminium-aluminium oxide (Al-Al2O3) graded composite materials were fabricated using powder metallurgy (PM) method. In processing, metal-ceramic graded composite materials of 0%, 10%, 20% and 30% weight percentage of ceramic concentration were prepared under 30 ton compaction load using a cylindrical die-punch set made of steel. After that, two-step pressureless sintering was carried out at sintering temperature and time 600°C and 3 hours respectively. It was observed that the sintered cylindrical specimens of 30 mm diameter were prepared successfully. The graded composite specimens were analysed and the properties such as density, microstructure and hardness were measured. It was found that after sintering process, the diameter of the graded cylindrical structure was decreased. Using both Archimedes method and rule of mixture (ROM), he density of structure was measured. The obtained results revealed that the microvickers hardness was increased as the ceramic component increases in the graded layer. Moreover, it was observed that the interface of the graded structure is clearly distinguished within the multilayer stack and the ceramic particles are almost uniformly distributed in the Al matrix.

  20. High Temperature Strength of Oxide Dispersion Strengthened Aluminium

    DEFF Research Database (Denmark)

    Clauer, A.H.; Hansen, Niels

    1984-01-01

    The tensile flow stress of coarse-grained dispersion strengthened Al-Al2O3 materials were measured as a function of temperature (77–873 K) and volume fraction (0.19-0.92 vol.%) of aluminium oxide. For the same material, the creep strength was determined as a function of temperature in the range 573...... is proportional to the Orowan stress and it does not fall below about 0.5-0.7 of the Orowan stress. During creep even at stresses near the threshold stress a dislocation substructure develops consisting of dense tangles surrounding the larger particles and the particle clusters in addition to a coarse dislocation...

  1. Phase Transformation of Hot Dipped Aluminium during High Temperature Oxidation

    International Nuclear Information System (INIS)

    Zaifol Samsu; Muhammad Daud; Hishamuddin Husain; Mohd Saari Ripin; Rusni Rejab; Zaiton Selamat; Mohd Shariff Sattar

    2014-01-01

    Low alloy carbon steel was coated by hot-dipping into a molten aluminum bath. Isothermal oxidations were carried out at 750 degree Celsius in static air to study the oxidation behaviour of the hot-dipped aluminide steel. The phase transformation in the aluminide layer during diffusion at 750 degree Celsius in static air was analyzed by SEM-EDX and XRD. After hot-dip treatment, the coating layers consisted of three phases, where Al, thinner layer of FeAl 3 , and thicker layer of Fe 2 Al 5 were detected from external topcoat to the aluminide/ steel substrate. After oxidation, the Fe 2 Al 5 formed during the immersion process completely transformed to Fe 2 Al 5 , FeAl 2 , FeAl and Al-Fe(Al) phases because of the composition gradient and the chemical diffusion by oxidation. After oxidation, there are some voids were found at the coating/ substrate interface due to the rapid inter-diffusion of iron and aluminium during oxidation. The FeAl phase kept growing with increasing exposure time at 750 degree Celsius, while the Fe 2 Al 5 was consumed during oxidation. After 168 hrs oxidation, the Fe 2 Al 5 phase was going disappeared as the aluminum layer was consumed. (author)

  2. Nano structured porous anodized aluminium oxide by using C2H2O4 for electronic applications: Study of the cell potential effects on formation of porous alumina

    International Nuclear Information System (INIS)

    Nur Hafiza Mohd Najib; Derman, M.N.M.; Nuzaihan, M.N.; Nazwa, T.; Azniza, A.

    2011-01-01

    In this research, a nano porous anodized aluminium oxide AAO thin film was successfully grown onto oxide layer on silicon substrate. The anodization of Si/ SiO 2 / Al substrate was conducted in a vigorous stirring oxalic acid bath solution. The rate of growth, morphology and also the kinetic study of the AAO thin film were investigated. The resulting array, pores structure and pores density of AAO strongly depends on an applied voltage of the anodizing process. (author)

  3. Parameters of nanodimensional aluminium films deposited by the laser method in vacuum

    International Nuclear Information System (INIS)

    Gusakov, G.A.; Ismailov, D.R.; Puzyrev, M.V.

    2011-01-01

    The investigation of the thickness and structure of a aluminium films surface produced by the laser-plasma deposition has been carried out. The dependence of a film thickness from laser radiation intensity has been determined. Threshold intensity has been determined when an evaporation of a target material begins. (authors)

  4. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  5. MOCVD superconducting oxide films

    Science.gov (United States)

    Hirai, Toshio; Yamane, Hisanori

    1991-01-01

    Preparation of high- Tc superconducting oxide films by MOCVD, their films structure and superconducting properties are reviewed from the standpoint of "nano-composites" and "fine-composites". Y-Ba-Cu-O (YBCO) films formed on SrTiO 3(100) at 850°C showed a superconducting transition temperature with zero resistivity above 90 K. The maximum critical current density was 2.0×10 6 A/cm 2 at 77.3 K and 0 T, and 6.5×10 4 A/cm 2 at 77.3 K and 27 T. CuO and a-axis oriented YBCO grains were contained in the matrix of c-axis oriented YBCO. A transmission electron microscope observation revealed that inclusions of about 10-30 nm were embedded in the a- b plane of YBCO. MOCVD-YBCO films prepared on MgO(100) were used for superconducting devices. Some studies on the MOCVD films of Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O are also reviewed.

  6. Aluminium hydro(oxide)–based (AO) adsorbent for defluoridation of ...

    African Journals Online (AJOL)

    In this study, the performance of different aluminium hydroxide.based adsorbents was compared in terms of fluoride adsorption capacity, potential for repetitive regeneration, surface acidity and surface site concentrations. The adsorbents were aluminium hydro(oxide) (AO), activated alumina (AA), and pseudoboehmite (PB).

  7. Ethylene oxide removal by sorption on aluminium oxide

    Directory of Open Access Journals (Sweden)

    Arsenijević Zorana Lj.

    2009-01-01

    Full Text Available The dynamics of ethylene oxide sorption and desorption on Al2O3 sorbent were investigated. The investigations of ethylene oxide sorption on Al2O3 show that significant sorption appeared above 125°C. The removal of sorbed ethylene oxide from Al2O3 was achieved by continuous increasing of the temperature up to 450°C in air stream. The analysis of desorbed products show that 90% of adsorbed ethylene oxide is converted to CO2 and the rest consists of the three derivatives of ethylene oxide. The exact composition of desorbed organic products will be determined in further investigation. The desorption temperature profiles point out the presence of two exothermic picks, as was confirmed by detection of CO2 and derivates of ethylene oxide at these temperatures. Investigation of textural characteristics and thermal stability of Al2O3 sorbent show that there are no changes of any characteristics of Al2O3 in sorption/desorption operating temperatures regimes. Only at 700°C the specific surface area of Al2O3 decreases of about 10%. This indicates that the investigated Al2O3 is convenient material for removal of ethylene oxide by sorption.

  8. Anodic oxide films on tungsten

    International Nuclear Information System (INIS)

    Di Paola, A.; Di Quarto, F.; Sunseri, C.

    1980-01-01

    Scanning electron microscopy was used to investigate the morphology of anodic oxide films on tungsten, obtained in various conditions of anodization. Studies were made of the growth of porous films, whose thickness increases with time and depends upon the current density. Temperature and electrolyte composition influence the film morphology. Gravimetric measurements of film dissolution at 70 0 C show that after a transient time, the rate of metal dissolution and that of film formation coincide. The porous films thicken because tungsten dissolves as WO 2 2+ and precipitates as WO 3 .H 2 O. (author)

  9. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  10. XPS and SIMS study of aluminium native oxide modifications induced by Q-switched Nd :YAG laser treatment

    CSIR Research Space (South Africa)

    Barnier, V

    2006-04-01

    Full Text Available During laser cleaning of aluminium in ambient atmosphere, modifications of the metal surface can be induced by transient thermal effects. This work aims to characterize the modification of the aluminium oxide layer on pure aluminium for a wide range...

  11. Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Calnan, Sonya [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Riedel, Wiebke; Gledhill, Sophie [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Stannowski, Bernd [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Schlatmann, Rutger [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich 1 Ingenieurwissenschaften I, University of Applied Science (HTW) Berlin, Wilhelminenhofstraße 75 A, 12459 Berlin (Germany)

    2015-11-02

    The effect of varying the boron and aluminium content of the starting electrolyte for extrinsically doped ZnO films grown on SnO{sub 2}:F substrates by electrochemical deposition was investigated. The ZnO:B film surface was characterized by grains with mainly hexagonal faces exposed while the exposed faces of the ZnO:Al grains were rectangular. Whereas a B{sup 3+}/Zn{sup 2+} ratio of up to 10 at.% in the electrolyte had no significant effect on the crystalline structure of the ZnO films, an Al{sup 3+}/Zn{sup 2+} ratio above 0.25 at.% increased the disorder in the crystalline structure. All the boron doped films exhibit a strong E{sub 2}-high Raman mode related to wurtzite ZnO structure but this peak was much weaker for ZnO:Al and diminished with increasing Al incorporation in the films. Exposing the films to ultra-violet light reduced their effective sheet resistance from values beyond measurement range to values between 40 and 5000 kΩ/sq for film thicknesses of 200–550 nm. Inspection of the optical spectra near the bandgap edge and the plasma edge in the mid infrared range, showed that the Al-doping resulted in a higher carrier concentration ~ 10{sup 20} cm{sup −3} than B-doping. X-ray electron spectroscopy showed that the dopant efficiency was limited by the absence of dopant atoms near the surface of all the ZnO:B films and of the lightly doped ZnO:Al and, by the formation of aluminium oxide at the surface of the more highly doped ZnO:Al films. - Highlights: • Crystalline ZnO grown by electrochemical deposition. • Comparison of influence of H{sub 3}BO{sub 3} and Al(NO{sub 3}){sub 3} as dopant sources. • Different ZnO crystalline orientation for Al and boron doping. • Film surface chemical composition suppressed electrical conductivity.

  12. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    Science.gov (United States)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-09-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30-50 nm. Annealing of the Al-Si stack on an oxidized silicon substrate was performed in air ambient at 300-550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10-95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ˜ 30 mV MPa-1, when the Wheatstone bridge was biased at 1 V input voltage.

  13. Optical Properties of Silver Aluminium Sulphide Ternary Thin Films ...

    African Journals Online (AJOL)

    NaOH served as pH adjuster. The films were deposited at 300K of temperature. The deposited film properties were studied using a Janway UV – VIS spectrophotometer. From the spectral analysis of absorbance and transmittance, the optical and solid properties were obtained. The properties studied include the reflectance, ...

  14. Oxidation and waste-to-energy output of aluminium waste packaging during incineration: A laboratory study.

    Science.gov (United States)

    López, Félix A; Román, Carlos Pérez; García-Díaz, Irene; Alguacil, Francisco J

    2015-09-01

    This work reports the oxidation behaviour and waste-to-energy output of different semi-rigid and flexible aluminium packagings when incinerated at 850°C in an air atmosphere enriched with 6% oxygen, in the laboratory setting. The physical properties of the different packagings were determined, including their metallic aluminium contents. The ash contents of their combustion products were determined according to standard BS ISO 1171:2010. The net calorific value, the required energy, and the calorific gain associated with each packaging type were determined following standard BS EN 13431:2004. Packagings with an aluminium lamina thickness of >50μm did not fully oxidise. During incineration, the weight-for-weight waste-to-energy output of the packagings with thick aluminium lamina was lower than that of packagings with thin lamina. The calorific gain depended on the degree of oxidation of the metallic aluminium, but was greater than zero for all the packagings studied. Waste aluminium may therefore be said to act as an energy source in municipal solid waste incineration systems. Copyright © 2015 Elsevier Ltd. All rights reserved.

  15. Changes in the morphology of porous anodic films formed on aluminium in natural and artificial ageing

    Directory of Open Access Journals (Sweden)

    López, V.

    2003-12-01

    Full Text Available Transmission electron microscopy and electrochemical impedance spectroscopy are used to demonstrate that the water retained in porous anodic aluminium oxide films is the main reason for their reactivity under electron beam irradiation in the TEM, accelerated ageing in an oven at 100 °C, or natural ageing over months and years in an outdoor atmosphere. Though the kinetics in each medium is highly different, there is a clear similarity between the structural and physical-chemical transformations that take place. Unsealed layers, practically free of water, hardly change their structure under the effect of electron beams and show the same impedance plots after hours at 100 °C or after years at environmental temperature in dry atmospheres.

    La microscopía electrónica de transmisión, por una parte, y la espectroscopia de impedancia electroquímica, por otra, demuestran que el agua retenida en las películas anódicas porosas de óxido de aluminio es la principal responsable de su reactividad bajo la irradiación del haz de electrones en el MET, en el envejecimiento acelerado en la estufa a 100 ºC o en el envejecimiento natural de meses y años en la atmósfera a temperatura ambiente. Aunque, de cinéticas muy diferentes, existe una indudable semejanza entre las transformaciones estructurales y físico-químicas que tienen lugar en los tres medios. Las capas sin sellar, prácticamente exentas de agua, apenas cambian su estructura por efecto del haz de electrones y muestran los mismos diagramas de impedancia después de horas a 100 ºC o de años a temperatura ambiente en atmósferas secas.

  16. Effects of iron-aluminium oxides and organic carbon on aggregate stability of bauxite residues.

    Science.gov (United States)

    Zhu, Feng; Li, Yubing; Xue, Shengguo; Hartley, William; Wu, Hao

    2016-05-01

    In order to successfully establish vegetation on bauxite residue, properties such as aggregate structure and stability require improvement. Spontaneous plant colonization on the deposits in Central China over the last 20 years has revealed that natural processes may improve the physical condition of bauxite residues. Samples from three different stacking ages were selected to determine aggregate formation and stability and its relationship with iron-aluminium oxides and organic carbon. The residue aggregate particles became coarser in both dry and wet sieving processes. The mean weight diameter (MWD) and geometry mean diameter (GMD) increased significantly, and the proportion of aggregate destruction (PAD) decreased. Natural stacking processes could increase aggregate stability and erosion resistant of bauxite residues. Free iron oxides and amorphous aluminium oxides were the major forms in bauxite residues, but there was no significant correlation between the iron-aluminium oxides and aggregate stability. Aromatic-C, alkanes-C, aliphatic-C and alkenes-C were the major functional groups present in the residues. With increasing stacking age, total organic carbon content and aggregate-associated organic carbon both increased. Alkanes-C, aliphatic-C and alkenes-C increased and were mainly distributed in macro-aggregates, whereas aromatic-C was mainly distributed in aluminium oxides maybe more important for stability of micro-aggregates.

  17. Experimental investigations on a CRDI system assisted diesel engine fuelled with aluminium oxide nanoparticles blended biodiesel

    Directory of Open Access Journals (Sweden)

    C. Syed Aalam

    2015-09-01

    Full Text Available Experiments were conducted to determine engine performance, exhaust emissions and combustion characteristics of a single cylinder, common rail direct injection (CRDI system assisted diesel engine using diesel with 25 percentage of zizipus jujube methyl ester blended fuel (ZJME25. Along with this ZJME25 aluminium oxide nanoparticles were added as additive in mass fractions of 25 ppm (AONP 25 and 50 ppm (AONP 50 with the help of a mechanical Homogenizer and an ultrasonicator. It was observed that aluminium oxide nanoparticles blended fuel exhibits a significant reduction in specific fuel consumption and exhaust emissions at all operating loads. At the full load, the magnitude of HC and smoke emission for the ZJME25 before the addition of aluminium oxide nanoparticles was 13.459 g/kW h and 79 HSU, whereas it was 8.599 g/kW h and 49 HSU for the AONP 50 blended ZJME25 fuel respectively. The results also showed a considerable enhancement in brake thermal efficiency and heat release rate due to the influence of aluminium oxide nanoparticles addition in biodiesel–diesel blend.

  18. Study of aluminium oxide from high-alumina refractory ceramics by ...

    Indian Academy of Sciences (India)

    Wintec

    Abstract. This work is focused on the study of the thermally stimulated blue emission of aluminium oxide. (Al2O3) that has been removed from twenty different high alumina-rich refractory bricks. The glow curve sensitivity of several alumina grains are defined by (i) a maximum centred at about 165°C that can be decon-.

  19. Aerogel nanoscale aluminium oxides as a destructive sorbent for mustard gas

    Czech Academy of Sciences Publication Activity Database

    Štengl, Václav; Bakardjieva, Snejana; Maříková, Monika; Šubrt, Jan; Oplustil, F.; Olšanská, M.

    2003-01-01

    Roč. 47, č. 4 (2003), s. 175-180 ISSN 0862-5468 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : aluminium oxide * aerogels * sonogels Subject RIV: CA - Inorganic Chemistry Impact factor: 0.449, year: 2003

  20. Aluminium induced oxidative stress results in decreased mitochondrial biogenesis via modulation of PGC-1α expression.

    Science.gov (United States)

    Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Kandimalla, Ramesh J L; Bal, Amanjit; Gill, Kiran Dip

    2013-12-01

    The present investigation was carried out to elucidate a possible molecular mechanism related to the effects of aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of Peroxisome proliferator activated receptor gamma co-activator 1α (PGC-1α) and its downstream targets i.e. Nuclear respiratory factor-1(NRF-1), Nuclear respiratory factor-2(NRF-2) and Mitochondrial transcription factor A (Tfam) in mitochondrial biogenesis. Aluminium lactate (10mg/kgb.wt./day) was administered intragastrically to rats for 12 weeks. After 12 weeks of exposure, we found an increase in ROS levels, mitochondrial DNA oxidation and decrease in citrate synthase activity in the Hippocampus (HC) and Corpus striatum (CS) regions of rat brain. On the other hand, there was a decrease in the mRNA levels of the mitochondrial encoded subunits-NADH dehydrogenase (ND) subunits i.e. ND1, ND2, ND3, Cytochrome b (Cytb), Cytochrome oxidase (COX) subunits i.e. COX1, COX3, ATP synthase (ATPase) subunit 6 along with reduced expression of nuclear encoded subunits COX4, COX5A, COX5B of Electron transport chain (ETC). Besides, a decrease in mitochondrial DNA copy number and mitochondrial content in both regions of rat brain was observed. The PGC-1α was down-regulated in aluminium treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α in aluminium treated rats. Electron microscopy results revealed a significant increase in the mitochondrial swelling, loss of cristae, chromatin condensation and decreases in mitochondrial number in case of aluminium treated rats as compared to control. So, PGC-1α seems to be a potent target for aluminium neurotoxicity, which makes it an almost ideal target to control or limit the damage that has been associated with the defective mitochondrial function seen in neurodegenerative diseases. © 2013.

  1. Steam generated conversion coating on aluminium alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

    Aluminium and its alloys are widely used in aerospace industry owing to their high strength to weight ratio. The surface of aluminium under normal conditions has a thin oxide film (2.5-10 nm) responsible for its inherent corrosion resistance. This oxide film can further be converted or transformed...... into functional conversion coatings in order to enhance corrosion resistance and adhesion to paint systems. Chromium based conversion coatings have been extensively used on aluminium alloys to improve adhesion of subsequent paint layers and corrosion resistance. However, the use of hexavalent chromium is strictly...... and growth of oxide film on different intermetallic particles and corrosion behaviour of such alloys.Surface morphology was observed by using FEG-SEM, EDX and FIB-SEM. Metal oxide surface characterization and compositional depth profiling were investigated by using XPS and GD-OES respectively...

  2. Strengthening of aluminium by a three-dimensional network of aluminium-oxide particles

    DEFF Research Database (Denmark)

    Hansen, Niels

    1969-01-01

    Study of transmission electron microscopy and tensile testing at room temperature and 400 C show that a network of hard particles strengthens aluminum effectively almost as much as a uniform dispersion of particles. An equation is derived for a relationship between the tensile stress and the mesh...... size of the oxide network in a plane....

  3. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    International Nuclear Information System (INIS)

    Kezzoula, F.; Hammouda, A.; Kechouane, M.; Simon, P.; Abaidia, S.E.H.; Keffous, A.; Cherfi, R.; Menari, H.; Manseri, A.

    2011-01-01

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  4. Production and characterization of aluminium oxide nanoshells on spray dried lactose.

    Science.gov (United States)

    Hellrup, Joel; Rooth, Mårten; Johansson, Anders; Mahlin, Denny

    2017-08-30

    Atomic layer deposition (ALD) enables deposition of dense nanometer thick metal oxide nanoshells on powder particles with precise thickness control. This leads to products with low weight fraction coating, also when depositing on nano- or micron sized powder particles. This study aimed at investigating the aluminium oxide nanoshell thickness required to prevent moisture sorption. The nanoshells were produced with ALD on spray-dried lactose, which is amorphous and extremely hygroscopic. The particles were studied with dynamic vapor sorption between 0 and 50% RH, light scattering, scanning electron microscopy, X-ray diffraction, differential scanning calorimetry, and polarized light microscopy. The ALD did not induce any recrystallization of the amorphous lactose. The dynamic vapor sorption indicated that the moisture sorption was almost completely inhibited by the nanoshell. Neat amorphous lactose rapidly recrystallized upon moisture exposure. However, only ca. 15% of the amorphous lactose particles recrystallized of a sample with 9% (by weight) aluminium oxide nanoshell at storage for six months upon 75% RH/40°C, which indicate that the moisture sorption was completely inhibited in the majority of the particles. In conclusion, the aluminium oxide nanoshells prevented moisture sorption and dramatically improved the long term physical stability of amorphous lactose. This shows the potential of the ALD-technique to protect drug microparticles. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Aluminium, carbonyls and cytokines in human nipple aspirate fluids: Possible relationship between inflammation, oxidative stress and breast cancer microenvironment.

    Science.gov (United States)

    Mannello, F; Ligi, D; Canale, M

    2013-11-01

    The human breast is likely exposed to Al (aluminium) from many sources including diet and personal care products. Underarm applications of aluminium salt-based antiperspirant provide a possible long-term source of exposure, especially after underarm applications to shaved and abraded skin. Al research in breast fluids likely reflects the intraductal microenvironment. We found increased levels of aluminium in noninvasively collected nipple aspirate fluids (NAF) from 19 breast cancer patients compared with 16 healthy control subjects (268 vs 131 μg/l, respectively; p Aluminium content and carbonyl levels showed a significant positive linear correlation (r(2) 0.6628, p aluminium salts) we also found a significantly increased levels of pro-inflammatory cytokines (IL-1β, IL-6, IL-12 p70, and TNF-α) and chemoattractant CC and CXC chemokines (IL-8, MIP-1α and MCP-1). In 12 invasive cancer NAF samples we found a significant positive linear correlation among aluminium, carbonyls and pro-inflammatory IL-6 cytokine (Y = 64.79x-39.63, r(2) 0.8192, p aluminium ions in oxidative and inflammatory status perturbations of breast cancer microenvironment, suggesting aluminium accumulation in breast microenvironment as a possible risk factor for oxidative/inflammatory phenotype of breast cells. © 2013.

  6. Thin film pc-Si by aluminium induced crystallization on metallic substrate

    Directory of Open Access Journals (Sweden)

    Cayron C.

    2013-04-01

    Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

  7. Aluminium induced oxidative stress results in decreased mitochondrial biogenesis via modulation of PGC-1α expression

    International Nuclear Information System (INIS)

    Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Kandimalla, Ramesh J.L.; Bal, Amanjit; Gill, Kiran Dip

    2013-01-01

    The present investigation was carried out to elucidate a possible molecular mechanism related to the effects of aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of Peroxisome proliferator activated receptor gamma co-activator 1α (PGC-1α) and its downstream targets i.e. Nuclear respiratory factor-1(NRF-1), Nuclear respiratory factor-2(NRF-2) and Mitochondrial transcription factor A (Tfam) in mitochondrial biogenesis. Aluminium lactate (10 mg/kg b.wt./day) was administered intragastrically to rats for 12 weeks. After 12 weeks of exposure, we found an increase in ROS levels, mitochondrial DNA oxidation and decrease in citrate synthase activity in the Hippocampus (HC) and Corpus striatum (CS) regions of rat brain. On the other hand, there was a decrease in the mRNA levels of the mitochondrial encoded subunits–NADH dehydrogenase (ND) subunits i.e. ND1, ND2, ND3, Cytochrome b (Cytb), Cytochrome oxidase (COX) subunits i.e. COX1, COX3, ATP synthase (ATPase) subunit 6 along with reduced expression of nuclear encoded subunits COX4, COX5A, COX5B of Electron transport chain (ETC). Besides, a decrease in mitochondrial DNA copy number and mitochondrial content in both regions of rat brain was observed. The PGC-1α was down-regulated in aluminium treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α in aluminium treated rats. Electron microscopy results revealed a significant increase in the mitochondrial swelling, loss of cristae, chromatin condensation and decreases in mitochondrial number in case of aluminium treated rats as compared to control. So, PGC-1α seems to be a potent target for aluminium neurotoxicity, which makes it an almost ideal target to control or limit the damage that has been associated with the defective mitochondrial function seen in neurodegenerative diseases. - Highlights: • Aluminium decreases the mRNA levels of mitochondrial and nuclear encoded

  8. Aluminium induced oxidative stress results in decreased mitochondrial biogenesis via modulation of PGC-1α expression

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Kandimalla, Ramesh J.L. [Department of Biochemistry, Postgraduate Institute of Medical Education and Research, Chandigarh 160012 (India); Bal, Amanjit [Department of Histopathology, Postgraduate Institute of Medical Education and Research, Chandigarh (India); Gill, Kiran Dip, E-mail: kdgill2002@yahoo.co.in [Department of Biochemistry, Postgraduate Institute of Medical Education and Research, Chandigarh 160012 (India)

    2013-12-01

    The present investigation was carried out to elucidate a possible molecular mechanism related to the effects of aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of Peroxisome proliferator activated receptor gamma co-activator 1α (PGC-1α) and its downstream targets i.e. Nuclear respiratory factor-1(NRF-1), Nuclear respiratory factor-2(NRF-2) and Mitochondrial transcription factor A (Tfam) in mitochondrial biogenesis. Aluminium lactate (10 mg/kg b.wt./day) was administered intragastrically to rats for 12 weeks. After 12 weeks of exposure, we found an increase in ROS levels, mitochondrial DNA oxidation and decrease in citrate synthase activity in the Hippocampus (HC) and Corpus striatum (CS) regions of rat brain. On the other hand, there was a decrease in the mRNA levels of the mitochondrial encoded subunits–NADH dehydrogenase (ND) subunits i.e. ND1, ND2, ND3, Cytochrome b (Cytb), Cytochrome oxidase (COX) subunits i.e. COX1, COX3, ATP synthase (ATPase) subunit 6 along with reduced expression of nuclear encoded subunits COX4, COX5A, COX5B of Electron transport chain (ETC). Besides, a decrease in mitochondrial DNA copy number and mitochondrial content in both regions of rat brain was observed. The PGC-1α was down-regulated in aluminium treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α in aluminium treated rats. Electron microscopy results revealed a significant increase in the mitochondrial swelling, loss of cristae, chromatin condensation and decreases in mitochondrial number in case of aluminium treated rats as compared to control. So, PGC-1α seems to be a potent target for aluminium neurotoxicity, which makes it an almost ideal target to control or limit the damage that has been associated with the defective mitochondrial function seen in neurodegenerative diseases. - Highlights: • Aluminium decreases the mRNA levels of mitochondrial and nuclear encoded

  9. Iron and aluminium oxides containing industrial wastes as adsorbents of heavy metals: Application possibilities and limitations.

    Science.gov (United States)

    Jacukowicz-Sobala, Irena; Ociński, Daniel; Kociołek-Balawejder, Elżbieta

    2015-07-01

    Industrial wastes with a high iron or aluminium oxide content are produced in huge quantities as by-products of water treatment (water treatment residuals), bauxite processing (red mud) and hard and brown coal burning in power plants (fly ash). Although they vary in their composition, the wastes have one thing in common--a high content of amorphous iron and/or aluminium oxides with a large specific surface area, whereby this group of wastes shows very good adsorbability towards heavy metals, arsenates, selenates, etc. But their physical form makes their utilisation quite difficult, since it is not easy to separate the spent sorbent from the solution and high bed hydraulic resistances occur in dynamic regime processes. Nevertheless, because of the potential benefits of utilising the wastes in industrial effluent treatment, this issue attracts much attention today. This study describes in detail the waste generation processes, the chemical structure of the wastes, their physicochemical properties, and the mechanisms of fixing heavy metals and semimetals on the surface of iron and aluminium oxides. Typical compositions of wastes generated in selected industrial plants are given. A detailed survey of the literature on the adsorption applications of the wastes, including methods of their thermal and chemical activation, as well as regeneration of the spent sorbents, is presented. The existing and potential ways of modifying the physical form of the discussed group of wastes, making it possible to overcome the basic limitation on their practical use, are discussed. © The Author(s) 2015.

  10. Oxidation behaviour of cast aluminium matrix composites with Ce surface coatings

    International Nuclear Information System (INIS)

    Pardo, A.; Merino, M.C.; Arrabal, R.; Feliu, S.; Viejo, F.

    2007-01-01

    The oxidation behaviour of SiC-reinforced aluminium matrix composites (A3xx.x/SiCp) has been studied after Ce-based treatments. Kinetics data of oxidation process were obtained from gravimetric tests performed at different temperatures (350, 425 and 500 o C). The nature of the oxidation layer was analyzed by scanning electron and atomic force microscopy, energy dispersive X-ray analysis, X-ray photoelectron spectroscopy and X-ray diffraction. The extent of oxidation degradation in untreated composites was preferentially localized in matrix/SiCp interfaces favouring the MgO formation. Ce coatings favoured a uniform oxidation of the composite surface with MgAl 2 O 4 spinel formation. This oxide increased the surface hardness of the materials

  11. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    Vanadium oxide films have been prepared by RF-sputtering using an oxygen containing sputter ps and a V2O5 target. The main component of these films is orthorhombic V2O5 with poor crystallinity and a tendency for ordering of the crystallites with the c-direction parallel to the substrate. All films...... were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  12. Development and characterization of ultra-thin dosemeters of aluminium oxide; Desarrollo y caracterizacion de dosimetros ultra-delgados de oxido de aluminio

    Energy Technology Data Exchange (ETDEWEB)

    Villagran V, E

    2003-07-01

    The aim of the present thesis work has been to investigate the thermoluminescent (Tl) response of aluminium oxide thin films with thicknesses of the order of 300 nm prepared by laser ablation. Aluminium oxide thin films show Tl response after they are subject to ultraviolet, beta and gamma radiation. The Tl curves exhibit peaks around 75 C and 169 C for UV radiation, 112 C and 180 C for beta particles and 110 C and 176 C for gamma radiation. In order to improve the Tl response some growth parameters such as power density and distance target-substrate were varied. The relation dose-response shows a non-linear behavior for UV irradiation; a linear behavior for beta-particles dose from 150 mGy to 50 Gy, and a linear behavior for gamma radiation dose from 5 Gy to 100 Gy. The kinetic Tl parameters were determined by Computerized Glow Curve Deconvolution (CGCD) method as well as using analytical methods. The CGCD results show that the high temperature peak is composed by four peaks with maximums in 165.7, 188.1, 215.3, 246.5 C. These obey a second order kinetics. The trap depth (E) values are 1.4, 1.6, 1.8 and 2.0 eV respectively. The different analytical results show a trap depth values of 0.914, 0.82 and 0.656 eV respectively. Oxide aluminium thin films obtained would be a suitable tool owing to their potential applications in clinical dosimetry, in the dose distributions due to weekly penetrating radiation determination, and in interfaces dosimetry. (Author)

  13. Exogenous nitric oxide donor protects Artemisia annua from oxidative stress generated by boron and aluminium toxicity.

    Science.gov (United States)

    Aftab, Tariq; Khan, M Masroor A; Naeem, M; Idrees, Mohd; Moinuddin; Teixeira da Silva, Jaime A; Ram, M

    2012-06-01

    Nitric oxide (NO) is an important signal molecule modulating the response of plants to environmental stress. Here we report the effects of boron (B) and aluminium (Al) contamination in soil, carried out with or without application of exogenous SNP (NO donor), on various plant processes in Artemisia annua, including changes in artemisinin content. The addition of B or Al to soil medium significantly reduced the yield and growth of plants and lowered the values of net photosynthetic rate, stomatal conductance, internal CO(2) concentration and total chlorophyll content. The follow-up treatment of NO donor favoured growth and improved the photosynthetic efficiency in stressed as well as non-stressed plants. Artemisinin content was enhanced by 24.6% and 43.8% at 1mmole of soil-applied B or Al. When SNP was applied at 2mmole concentration together with either 1mmole of B and/or Al, it further stimulated artemisinin biosynthesis compared to the control. Application of B+Al+SNP proved to be the best treatment combination for the artemisinin content in Artemisia annua leaves. Copyright © 2012 Elsevier Inc. All rights reserved.

  14. Positive Biomechanical Effects of Titanium Oxide for Sandblasting Implant Surface as an Alternative to Aluminium Oxide.

    Science.gov (United States)

    Gehrke, Sergio Alexandre; Taschieri, Silvio; Del Fabbro, Massimo; Coelho, Paulo Guilherme

    2015-10-01

    The aim of this study was to evaluate the physico-chemical properties and the in vivo host response of a surface sandblasted with particles of titanium oxide (TiO2) followed by acid etching as an alternative to aluminium oxide. Thirty titanium disks manufactured in the same conditions as the implants and 24 conventional cylindrical implants were used. Half of the implants had a machined surface (Gcon) while in the other half; the surface was treated with particles of TiO2 followed by acid etching (Gexp). Surface characterization was assessed by scanning electron microscope (SEM), energy dispersive X-ray spectrometry (EDS), profilometry, and wettability. For the in vivo test, 12 implants of each group were implanted in the tibia of 6 rabbits, and were reverse torque tested after periods of 30 or 60 days after implantation. Following torque, SEM was utilized to assess residual bone-implant contact. The surface characterization by SEM showed a very homogeneous surface with uniform irregularities for Gexp and a small amount of residues of the blasting procedure, while Gcon presented a surface with minimal irregularities from the machining tools. Wettability test showed decreased contact angle for the Gcon relative to the Gexp. The Gexp removal torque at 30 and 60 days was 28.7%, and 33.2% higher relative to the Gcon, respectively. Blasting the surface with particles of TiO2 represents an adequate option for the surface treatment of dental implants, with minimal risk of contamination by the residual debris from the blasting procedure.

  15. Evaluation of the mechanical properties of microarc oxidation coatings and 2024 aluminium alloy substrate

    CERN Document Server

    Xue Wen Bin; Deng Zhi Wei; Chen Ru Yi; Li Yong Liang; Zhang Ton Ghe

    2002-01-01

    A determination of the phase constituents of ceramic coatings produced on Al-Cu-Mg alloy by microarc discharge in alkaline solution was performed using x-ray diffraction. The profiles of the hardness, H, and elastic modulus, E, across the ceramic coating were determined by means of nanoindentation. In addition, a study of the influence of microarc oxidation coatings on the tensile properties of the aluminium alloy was also carried out. The results show that the H-and E-profiles are similar, and both of them exhibit a maximum value at the same depth of coating. The distribution of the alpha-Al sub 2 O sub 3 phase content determines the H- and E-profiles of the coatings. The tensile properties of 2024 aluminium alloy show less change after the alloy has undergone microarc discharge surface treatment.

  16. Thin film hydrous metal oxide catalysts

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  17. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  18. Surface oxide formation during corona discharge treatment of AA 1050 aluminium surfaces

    DEFF Research Database (Denmark)

    Minzari, Daniel; Møller, Per; Kingshott, Peter

    2008-01-01

    process modifies aluminium AA 1050 surface, the oxide growth and resulting corrosion properties. The corona treatment is carried out in atmospheric air. Treated surfaces are characterized using XPS, SEM/EDS, and FIB-FESEM and results suggest that an oxide layer is grown, consisting of mixture of oxide...... and hydroxide. The thickness of the oxide layer extends to 150–300 nm after prolonged treatment. Potentiodynamic polarization experiments show that the corona treatment reduces anodic reactivity of the surface significantly and a moderate reduction of the cathodic reactivity.......Atmospheric plasmas have traditionally been used as a non-chemical etching process for polymers, but the characteristics of these plasmas could very well be exploited for metals for purposes more than surface cleaning that is presently employed. This paper focuses on how the corona discharge...

  19. EFFECTS OF HOUSING SYSTEMS ON PRODUCTIVE PERFORMANCE OF COMMERCIAL LAYERS FOLLOWING INDUCED MOLTING BY ALUMINIUM OXIDE SUPPLEMENTATION

    Directory of Open Access Journals (Sweden)

    M. YOUSAF AND N. AHMAD1

    2006-07-01

    Full Text Available The project was carried out to compare the performance of molted layers by aluminium oxide supplementation in cages and on litter floor system. Seventy two Single Comb White Leghorn commercial layers (60 weeks old were divided into six experimental units of 12 layers each. These experimental units were randomly divided into two groups, each consisting of three experimental units, one group was reared on litter floor and the other in cages. The layers were provided with 35 gm feed containing 4 gm aluminium oxide/kg of feed for first 14 days of molting period (66-67 weeks of age. The layers showed significant reduction in body weight following induced molting by aluminium oxide under both housing systems. Body weight loss was higher, while feed consumption was lower, in the cages as compared to litter floor system. The layers molted by aluminium oxide showed significantly higher egg production in the cages (P≤0.05 than in litter floor system (P≤0.05. The layers in the subsequent production cycle showed improvement in egg weight, egg shell thickness and Haugh Unit Score. The egg weight and egg shell thickness were higher in the birds kept on litter floor system than those kept in cages (P≥0.05. However, Haugh unit score was higher in the cage system. It was concluded that aluminium oxide can be effectively supplemented for better production performance and improved egg quality in the second production cycle preferably in the cages.

  20. Study of water vapour adsorption kinetics on aluminium oxide materials

    Science.gov (United States)

    Livanova, Alesya; Meshcheryakov, Evgeniy; Reshetnikov, Sergey; Kurzina, Irina

    2017-11-01

    Adsorbents on the basis of active aluminum oxide are still of demand on the adsorbent-driers market. Despite comprehensive research of alumina adsorbents, and currently is an urgent task to improve their various characteristics, and especially the task of increasing the sorption capacity. In the present work kinetics of the processes of water vapours' adsorption at room temperature on the surface of desiccant samples has been studied. It was obtained on the basis of bayerite and pseudoboehmite experimentally. The samples of pseudoboehmite modified with sodium and potassium ions were taken as study objects. The influence of an adsorbent's grain size on the kinetics of water vapours' adsorption was studied. The 0.125-0.25 mm and 0.5-1.0 mm fractions of this sample were used. It has been revealed that the saturation water vapor fine powder (0.125-0.25 mm) is almost twofold faster in comparison with the sample of fraction 0.5-1.0 mm due to the decrease in diffusion resistance in the pores of the samples when moving from the sample of larger fraction to the fine-dispersed sample. It has been established that the adsorption capacity of the pseudoboehmite samples, modified by alkaline ions, is higher by ˜40 %, than for the original samples on the basis of bayerite and pseudoboehmite.

  1. The effect of ethylene glycol on pore arrangement of anodic aluminium oxide prepared by hard anodization

    Science.gov (United States)

    Guo, Yang; Zhang, Li; Han, Mangui; Wang, Xin; Xie, Jianliang; Deng, Longjiang

    2018-03-01

    The influence of the addition of ethylene glycol (EG) on the pore self-ordering process in anodic aluminium oxide (AAO) membranes prepared by hard anodization (HA) was investigated. It was illustrated that EG has a substantial effect on the pore arrangement of AAO, and it was found that a smaller pore size can be obtained with an EG concentration reaching 20 wt% in aqueous electrolyte. The number of estimated defects of AAO increases significantly with an increase in EG concentration to 50 wt%. Excellent ordering of pores was realized when the samples were anodized in the 30 wt%-EG-containing aqueous electrolyte.

  2. Surface and interface analysis of poly-hydroxyethylmethacrylate-coated anodic aluminium oxide membranes

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Nurshahidah [School of Engineering and Information Technology, Murdoch University, WA 6150 (Australia); Murdoch Applied Nanotechnology Research Group, Murdoch University, WA 6150 (Australia); Duan, Xiaofei [School of Chemistry, The University of Melbourne, VIC 3010 (Australia); Jiang, Zhong-Tao, E-mail: Z.Jiang@murdoch.edu.au [School of Engineering and Information Technology, Murdoch University, WA 6150 (Australia); Goh, Bee Min [School of Engineering and Information Technology, Murdoch University, WA 6150 (Australia); Lamb, Robert [School of Chemistry, The University of Melbourne, VIC 3010 (Australia); Tadich, Anton [Australian Synchrotron, Clayton, VIC 3086 (Australia); Poinern, Gérrard Eddy Jai; Fawcett, Derek [Murdoch Applied Nanotechnology Research Group, Murdoch University, WA 6150 (Australia); Chapman, Peter [Department of Chemistry, Curtin University, WA 6102 (Australia); Singh, Pritam [School of Engineering and Information Technology, Murdoch University, WA 6150 (Australia)

    2014-01-15

    The surface and interface of poly (2-hydroxyethylmethacrylate) (PHEMA) and anodic aluminium oxide (AAO) membranes were comprehensively investigated using Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy. It was found that 1s→π* (C=O) and 1s→σ* (C-O) transitions were dominant on the surface of both bulk PHEMA polymer and PHEMA-surface coated AAO (AAO–PHEMA) composite. Findings from NEXAFS, Fourier-Transform Infrared (FTIR) and X-ray Photoelectron Spectroscopy (XPS) analyses suggest the possibility of chemical interaction between carbon from the ester group of polymer and AAO membrane.

  3. Fabrication of ultra thin anodic aluminium oxide membranes by low anodization voltages

    Science.gov (United States)

    Pastore, I.; Poplausks, R.; Apsite, I.; Pastare, I.; Lombardi, F.; Erts, D.

    2011-06-01

    Formation of ultrathin anodised aluminium oxide (AAO) membranes with high aspect ratio by Al anodization in sulphuric and oxalic acids at low potentials was investigated. Low anodization potentials ensure slow electrochemical reaction speeds and formation of AAO membranes with pore diameter and thickness below 20 nm and 70 nm respectively. Minimum time necessary for formation of continuous AAO membranes was determined. AAO membrane pore surface was covered with polymer Paraloid B72TM to transport it to the selected substrate. The fabricated ultra thin AAO membranes could be used to fabricate nanodot arrays on different surfaces.

  4. Nuclear analysis of a rare earth containing protective oxide on aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Gorman, J.D.; Paterson, P.J.K. [Royal Melbourne Inst. of Tech., VIC (Australia); Hughes, A.E. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Melbourne, VIC (Australia). Div. of Materials Science

    1996-12-31

    The aim is study was to examine the thickness of the conversion coating as well as the elemental depth distribution of cerium and molybdenum using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), Scanning Auger Electron Spectroscopy and Forward Recoil Spectroscopy (FRS). In addition, RBS has been used to examine how changes in processing conditions, particularly the treatment temperatures, influences the coating thickness and Ce distribution at each process step. SEM established that a crazed oxide structure was developed over the matrix of the alloy using the above process steps. RBS was chosen to provide elemental concentration versus depth information on these samples since it is largely insensitive to surface topography when the detector is set to high scattering angles. A other advantage of using RBS for this particular system is that the heavy elements incorporated into the coating such as Ce and Mo because of their high atomic number compared to the aluminium oxide, are well separated from aluminium and oxygen at their higher recoil energies. Forward Recoil Spectroscopy is capable of detecting hydrogen and it has been used to confirm that the coating is hydrated and to establish the hydrogen distribution within the final oxide coating on each alloy. 7 refs., 1 tab., 4 figs.

  5. Acicular iron nanoparticles protected against sintering with aluminium oxide

    Directory of Open Access Journals (Sweden)

    Pozas, R.

    2004-08-01

    Full Text Available Acicular iron nanoparticles have been obtained by thermal reduction with hydrogen of a goethite precursor protected against sintering with Al cations, either by doping during the synthesis or by a further coating and the relation between microstructure and magnetic properties of the final Fe particles has been studied in order to evaluate the efficiency of both protecting methods. Uniform goethite and Al-doped goethite precursors were prepared by oxidation with air of FeSO4 solutions, containing Al(NO33 when required, previously precipitated with Na2CO3, while the Al oxide coating on the undoped goethite precursor was carried out by heterocoagulation. In both protecting methods, Al cations were mainly concentrated in the particle outer layers of the goethite precursors and the final iron. Due to this Al enrichment, the growth of iron crystals during the reduction process is minimised resulting Fe particles with improved coercivity and squareness. Nevertheless, the coating procedure seems to be more effective giving rise to the iron particles with the largest coercivity, probably due to a better preservation of the acicular morphology in this case.

    Se han obtenido nanopartículas aciculares de hierro por reducción térmica con hidrógeno de un precursor acicular de goetita que fue protegido frente a la sinterización por la adición de cationes Al mediante dopado durante su síntesis o por recubrimiento posterior, estudiándose la relación entre la microestructura y las propiedades magnéticas de las partículas finales de α-Fe con objeto de evaluar la eficacia de ambos métodos de protección. Los precursores uniformes de goetita y de goetita dopada con Al se prepararon por oxidación con aire de disoluciones de FeSO4 o de FeSO4 y Al(NO33, previamente precipitadas por la adición de Na2CO3, mientras que el recubrimiento con óxido de aluminio sobre las partículas de goetita fue llevado a cabo por un procedimiento de heterocoagulaci

  6. Oxide film defects in Al alloys and the formation of hydrogen- related porosity

    International Nuclear Information System (INIS)

    Griffiths, W D; Yue, Y; Gerrard, A J

    2016-01-01

    Double oxide film defects have also been held responsible for the origins of hydrogen porosity, where hydrogen dissolved in the Al melt passes into the interior atmosphere of the double oxide film defect causing it to inflate. However, this is in opposition to long- established evidence that H cannot readily diffuse through aluminium oxide. To investigate this further, samples of commercial purity Al were first degassed to remove their initial H content, and then heated to above their melting point and held in atmospheres of air and nitrogen respectively, to determine any differences in H pick-up. The experiment showed that samples held in an oxidising atmosphere, and having an oxide skin, picked up significantly less H than when the samples were held in a nitrogen atmosphere, which resulted in the formation of AlN in cracks in the oxide skin of the sample. It is suggested that double oxide film defects can give rise to hydrogen-related porosity, but this occurs more quickly when the oxygen in the original oxide film defect has been consumed by reaction with the surrounding melt and nitrogen reacts to form AlN, which is more permeable to H than alumina, more easily allowing the oxide film defect to give rise to a hydrogen pore. This is used to interpret results from an earlier synchrotron experiment, in which a small pore was seen to grow into a larger pore, while an adjacent large pore remained at a constant size. (paper)

  7. Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

    Directory of Open Access Journals (Sweden)

    Saharin Nurul Syazlin Binti

    2017-01-01

    Full Text Available The present paper reports the optimum concentration of germanium (Ge dopant in aluminium oxide (AhO3 samples prepared by combustion synthesis (CS method for thermoluminescence (TL studies. The samples were prepared at various Ge concentration i.e. 1 to 5% mol. The phase formation of un-doped and Ge-doped Al2O3 samples was determined using X-ray Diffraction (XRD. The sharp peaks present in the XRD pattern confirms the crystallinity of the samples. The samples were then exposed to 50 Gy Cobalt-60 sources (Gamma cell 220. TL glow curves were measured and recorded using a Harshaw Model 3500 TLD reader. Comparison of TL peaks were observed to obtain the best composition of Ge dopants. A simple glow curves TL peak at around 175̊C for all composition samples was observed. It was also found that the composition of aluminium oxide doped with 3.0% of germanium exhibits the highest thermoluminescence (TL intensity which is 349747.04 (a.u.

  8. Study of the oxides nature effect of rare and rare earth elements on the aluminium-chromium catalyst properties

    International Nuclear Information System (INIS)

    Dadashev, B.A.; Abbasov, S.G.; Sarydzhanov, A.A.; AN Azerbajdzhanskoj SSR, Baku. Inst. Neftekhimicheskikh Protsessov)

    1975-01-01

    Adsorption studies have shown that oxides of rare and rare earth elements REE appreciably influence the structure of aluminium-chrome catalyst. Alkaline promotors, unlike REE, contribute to the formation of developed contact surface. Electrophysical investigations show that oxides of rare elements introduced into the catalyst increase its conductivity and activation energy. As for REE oxides, they decrease the conductivity and increase the activation energy. Catalysts with developed surface and high conductivity are also more active in the reaction of isopentane dehydration

  9. Ellagic and ferulic acids alleviate gamma radiation and aluminium chloride-induced oxidative damage.

    Science.gov (United States)

    Salem, Ahmed M; Mohammaden, Tarek F; Ali, Mohamed A M; Mohamed, Enas A; Hasan, Hesham F

    2016-09-01

    Ionizing radiation interacts with biological systems through the generation of free radicals, which induce oxidative stress. Aluminium (Al) can negatively impact human health by direct interaction with antioxidant enzymes. Ellagic acid (EA) and Ferulic acid (FA) are plant polyphenolic compounds, have gained attention due to their multiple biological activities. To date, no studies investigating the antioxidant effect of EA/FA in a model involving both γ radiation and aluminium chloride (AlCl3) have been reported. Herein, we investigated the protective effect of EA and FA against oxidative stress induced by γ radiation and AlCl3 in rats. Rats were divided into thirteen groups: a negative control group, 3 positive control groups (γ-irradiated, AlCl3-treated and γ-irradiated+AlCl3-treated) and 9 groups (3 γ-irradiated, 3 AlCl3-treated and 3 γ-irradiated+AlCl3-treated) treated with EA and/or FA. Liver function and lipid profile were assessed. Levels of lipid peroxidation, protein oxidation and endogenous antioxidants as well as the concentrations of copper, iron and zinc were estimated in liver tissue homogenate. Furthermore, liver tissue sections were histologically examined. Oral administration of EA and/or FA resulted in 1) amelioration of AlCl3 and/or γ-radiation-induced hepatic function impairment, dyslipidemia and hepatic histological alterations; 2) reduction in liver MDA and PCC levels; 3) elevation of liver CAT, GPx and SOD activity as well as GSH level; 4) elevation in liver Cu concentrations which was accompanied by a reduction in Fe and Zn concentrations. Oral administration of EA and/or FA may be useful for ameliorating γ radiation and/or AlCl3-induced oxidative damage. Copyright © 2016 Elsevier Inc. All rights reserved.

  10. The role of oxidative debris on graphene oxide films.

    Science.gov (United States)

    López-Díaz, David; Velázquez, Maria Mercedes; Blanco de La Torre, Santiago; Pérez-Pisonero, Ana; Trujillano, Raquel; García Fierro, José Luis; Claramunt, Sergi; Cirera, Albert

    2013-12-02

    We study the effect of oxidative impurities on the properties of graphene oxide and on the graphene oxide Langmuir-Blodgett films (LB). The starting material was grupo Antolín nanofibers (GANF) and the oxidation process was a modified Hummers method to obtain highly oxidized graphene oxide. The purification procedure reported in this work eliminated oxidative impurities decreasing the thickness of the nanoplatelets. The purified material thus obtained presents an oxidation degree similar to that achieved by chemical reduction of the graphite oxide. The purified and non-purified graphene oxides were deposited onto silicon by means of a Langmuir-Blodgett (LB) methodology. The morphology of the LB films was analyzed by field emission scanning microscopy (FE-SEM) and micro-Raman spectroscopy. Our results show that the LB films built by transferring Langmuir monolayers at the liquid-expanded state of the purified material are constituted by close-packed and non-overlapped nanoplatelets. The isotherms of the Langmuir monolayer precursor of the LB films were interpreted according to the Volmer's model. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  12. A Macroporous TiO2 Oxygen Sensor Fabricated Using Anodic Aluminium Oxide as an Etching Mask

    Directory of Open Access Journals (Sweden)

    Sheng-Po Wu

    2010-01-01

    Full Text Available An innovative fabrication method to produce a macroporous Si surface by employing an anodic aluminium oxide (AAO nanopore array layer as an etching template is presented. Combining AAO with a reactive ion etching (RIE processes, a homogeneous and macroporous silicon surface can be effectively configured by modulating AAO process parameters and alumina film thickness, thus hopefully replacing conventional photolithography and electrochemical etch methods. The hybrid process integration is considered fully CMOS compatible thanks to the low-temperature AAO and CMOS processes. The gas-sensing characteristics of 50 nm TiO2 nanofilms deposited on the macroporous surface are compared with those of conventional plain (or non-porous nanofilms to verify reduced response noise and improved sensitivity as a result of their macroporosity. Our experimental results reveal that macroporous geometry of the TiO2 chemoresistive gas sensor demonstrates 2-fold higher (~33% improved sensitivity than a non-porous sensor at different levels of oxygen exposure. In addition, the macroporous device exhibits excellent discrimination capability and significantly lessened response noise at 500 °C. Experimental results indicate that the hybrid process of such miniature and macroporous devices are compatible as well as applicable to integrated next generation bio-chemical sensors.

  13. In vitro toxicological assessment of iron oxide, aluminium oxide and copper nanoparticles in prokaryotic and eukaryotic cell types.

    Science.gov (United States)

    Sadiq, Rakhshinda; Khan, Qaiser Mahmood; Mobeen, Ameena; Hashmat, Amer Jamal

    2015-04-01

    Metallic nanoparticles (NPs) have a variety of applications in different industries including pharmaceutical industry where these NPs are used mainly for image analysis and drug delivery. The increasing interest in nanotechnology is largely associated with undefined risks to the human health and to the environment. Therefore, in the present study cytotoxic and genotoxic effects of iron oxide, aluminium oxide and copper nanoparticles were evaluated using most commonly used assays i.e. Ames assay, in vitro cytotoxicity assay, micronucleus assay and comet assay. Cytotoxicity to bacterial cells was assessed in terms of colony forming units by using Escherichia coli (gram negative) and Bacillus subtilis (gram positive). Ames assay was carried out using two bacterial strains of Salmonella typhimurium TA98 and TA100. Genotoxicity of these NPs was evaluated following exposure to monkey kidney cell line, CHS-20. No cytotoxic and genotoxic effects were observed for iron oxide, and aluminium oxide NPs. Copper NPs were found mutagenic in TA98 and in TA100 and also found cytotoxic in dose dependent manner. Copper NPs induced significant (p cells with micronuclei (96.6 ± 5.40) at the highest concentration (25 µg/mL). Copper NPs also induced DNA strand breaks at 10 µg/mL and oxidative DNA damage at 5 and 10 µg/mL. We consider these findings very useful in evaluating the genotoxic potential of NPs especially because of their increasing applications in human health and environment with limited knowledge of their toxicity and genotoxicity.

  14. High temperature oxidation of copper and copper aluminium alloys: Impact on furnace side wall cooling systems

    Science.gov (United States)

    Plascencia Barrera, Gabriel

    The high temperature oxidation behaviours of copper and dilute Cu-Al alloys were investigated. Experiments were carried out by: (i) Oxidizing under various oxygen potentials at different temperatures using a combined TG-DTA apparatus. (ii) Oxidizing in a muffle furnace (in air) at different temperatures for extended periods of time. The oxidation mechanisms were evaluated based upon the kinetic data obtained as well as by X-ray diffraction and microscopical (SEM and optical) analyses. It was found that oxidation of copper strongly depends on the temperature. Two distinct mechanisms were encountered. Between 300 and 500°C, the oxidation rate is controlled by lateral growth of the oxide on the metal surface, whereas between 600 and 1000°C oxidation is controlled by lattice diffusion of copper ions through the oxide scale. On the other hand, the partial pressure of oxygen only has a small effect on the oxidation of copper. Alloy oxidation is also dependent on the temperature. As temperature increases, more aluminium is required to protect copper from being oxidized. It was shown that if the amount of oxygen that dissolves in the alloy exceeds the solubility limit of oxygen in copper, an internal oxidation layer will develop, leading to the formation of a tarnishing scale. On the other hand if the oxygen content in the alloy lies below the solubility limit of oxygen in copper, no oxidation products will form since a tight protective alumina layer will form on the alloy surface. Surface phenomena may affect the oxidation behaviour of dilute Cu-Al alloys. Immersion tests in molten copper matte and copper converting slag, using laboratory scale cooling elements with various copper based materials, were conducted. Results from these tests showed that alloying copper with 3 to 4 wt% Al decreases the oxidation rate of pure copper by 4 orders of magnitude; however due to a significant drop in thermal conductivity, the ability to extract heat is compromised, leading to

  15. Aluminium recovery from waste incineration bottom ash, and its oxidation level.

    Science.gov (United States)

    Biganzoli, Laura; Grosso, Mario

    2013-09-01

    The recovery of aluminium (Al) scraps from waste incineration bottom ash is becoming a common practice in waste management. However, during the incineration process, Al in the waste undergoes oxidation processes that reduce its recycling potential. This article investigates the behaviour of Al scraps in the furnace of two selected grate-fired waste-to-energy plants and the amount recoverable from the bottom ash. About 21-23% of the Al fed to the furnace with the residual waste was recovered and potentially recycled from the bottom ash. Out of this amount, 76-87% was found in the bottom ash fraction above 5 mm and thus can be recovered with standard eddy current separation technology. These values depend on the characteristics and the mechanical strength of the Al items in the residual waste. Considering Al packaging materials, about 81% of the Al in cans can be recovered from the bottom ash as an ingot, but this amount decreases to 51% for trays, 27% for a mix of aluminium and poly-laminated foils and 47% for paper-laminated foils. This shows that the recovery of Al from the incineration residues increases proportionally to the thickness of the packaging.

  16. Fabrication of super slippery sheet-layered and porous anodic aluminium oxide surfaces and its anticorrosion property

    Science.gov (United States)

    Song, Tingting; Liu, Qi; Liu, Jingyuan; Yang, Wanlu; Chen, Rongrong; Jing, Xiaoyan; Takahashi, Kazunobu; Wang, Jun

    2015-11-01

    Inspired by natural plants such as Nepenthes pitcher plants, super slippery surfaces have been developed to improve the attributes of repellent surfaces. In this report, super slippery porous anodic aluminium oxide (AAO) surfaces have fabricated by a simple and reproducible method. Firstly, the aluminium substrates were treated by an anodic process producing micro-nano structured sheet-layered pores, and then immersed in Methyl Silicone Oil, Fluororalkylsilane (FAS) and DuPont Krytox, respectively, generating super slippery surfaces. Such a good material with excellent anti-corrosion property through a simple and repeatable method may be potential candidates for metallic application in anti-corrosion and extreme environment.

  17. Electrochromism of sputtered tungstic oxide films

    International Nuclear Information System (INIS)

    Tatsuoka, Hirokazu; Urabe, Kazuo; Kitao, Michihiko; Yamada, Shoji

    1985-01-01

    Electrochromism of tungstic oxide films were investigated. The films were prerared by r.f. sputtering from compressed WO 3 target under various total pressure and O 2 content of Ar-O 2 mixed sputtering atmosphere. Blue films were obtained under low total pressure of sputtering atmosphere with low content of O 2 . These films could be colored more deeply by the conventional electrochemical procedure, but could not be bleached to transparent states. Transparent films were obtained under the condition of high total pressure or high O 2 content of sputtering atmosphere. The transparent films prepared under high pressure show good electrochromic behavior after aging process. During the aging process, ''passive protons'' are injected into WO 3 matrix, where the ''passive proton'' means that it has no influence on electrochromic absorption band, and is not able to be extracted electrochemically. (author)

  18. Electrogenerated luminescence of chosen lanthanide complexes at stationary oxide-covered aluminium electrode

    International Nuclear Information System (INIS)

    Staninski, Krzysztof; Lis, Stefan

    2008-01-01

    The electrochemiluminescence (ECL) of aqueous solutions of Tb 3+ , Dy 3+ , and Eu 3+ complexes having a variety of ligand groups was studied using an oxide-covered aluminium electrode. The ligand groups, under study, were the aromatic acids (salicylic, phthalic), the chelatic ligands (ethylenediamine DL(o-hydroxy-phenylacetic acid), EDDHA and ethylenediamine tetraacetic acid, EDTA), as well as Schiff bases: 1,10-disalicylidene-4,7-diaza-1,10-decyldiamine and 2-salicylideneamine-2-hydroxymethyl-1,3-propanediol. The results show that the generated emissions were mainly the result of energy transfer from the ligands to the metals. The best ECL properties were observed in the case of the complexes Tb(III)-EDDHA, Dy(III)-EDDHA, and Dy(III)-salicylic acid. In the ternary systems: Schiff base-Tb(III)-Eu(III) energy transfer to the emitting level of the Eu(III) ion was observed

  19. Application of phosphating techniques to aluminium and carbon steel surfaces using nitro guanidine as oxidizing agent

    International Nuclear Information System (INIS)

    Briseno M, S.A.

    1995-01-01

    Phosphate coatings are inorganic crystalline deposits laid down uniformly on properly prepared surfaces by a chemical reaction with the treated base metal. The reaction consists in dissolving some surface metal by acid attack and then causing surface neutralization of the phosphate solution with consequent precipitation of the phosphate coating. Phosphate coatings do not provide appreciable corrosion protection in themselves. They are useful mainly as a base for paints, ensuring good adherence of paint to steel and decreasing the tendency for corrosion to under cut the paint film at scratches or other defects. In this work firstly were realized phosphate on standard carbon steel, employing technical of cold phosphate (at 40 Centigrade degrees and with a treatment time of 30 minutes) and hot phosphate (at 88 Centigrade degrees and with a treatment time of 15 minutes), where with this last were obtained the best results. Both methods used phosphate solutions of Zn/Mn and using as catalyst Nitro guanidine. Aluminium surfaces were phosphate used solutions of Cr and as catalyst Sodium bi fluoride. The phosphating on this surface were realized at temperature of 50 Centigrade degrees and with a treatment time of 10 minutes. In this work were obtained a new phosphate coatings on steel surfaces, these coatings were realized with a phosphate solution manufactured with the precipitates gathered during the hot phosphating on carbon steel. These coatings show excellent physical characteristics and of corrosion resistance. Were determined the physical testings of the coatings phosphate obtained on carbon steel and aluminium surfaces. These testing were: roughness, thickness, microhardness and adhesion. The best results were showed in carbon steel phosphate with precipitated solutions. The technical of analysis for activation with thermic neutrons was used to determine the phosphate coatings composition. Finally, corrosion testings were realized by means of two methods

  20. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  1. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  2. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  3. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    OpenAIRE

    Boltz, Janika

    2011-01-01

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO2 and TiO2. In order to ach...

  4. Comparative studies of thin film growth on aluminium by AFM, TEM and GDOES characterization

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Jiantao, E-mail: alexanderinmanchester@gmail.com; Thompson, George E.

    2016-07-30

    Highlights: • Coating initiation was evidenced after conversion treatment for only 30 s and the uniform cross section revealed a chemical deposition process of electrolyte anions on aluminium. • A proceeding process of aluminium dissolution during conversion treatment was found for the first time, indicating non-inhibitive kinetics of anodic reactions. • Coating growth on aluminium was determined by the availability of electrolyte anions and the prolonged conversion treatment crated a significant concentration gradient to limit growth. • Coating shrinkage either in the microscope or after post-coating treatment in the air was clarified, especially for the coating after prolonged conversion treatments. - Abstract: In this present study, comparative studies of trivalent chromium conversion coating formation, associated with aluminium dissolution process, have been investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM) and glow-discharge optical emission spectroscopy (GDOES). High-resolution electron micrographs revealed the evident and uniform coating initiation on the whole surface after conversion treatment for only 30 s, although a network of metal ridges was created by HF etching pre-treatment. In terms of conversion treatment process on electropolished aluminium, constant kinetics of coating growth, ∼0.30 ± 0.2 nm/s, were found after the prolonged conversion treatment for 600 s. The availability of electrolyte anions for coating deposition determined the growth process. Simultaneously, a proceeding process of aluminium dissolution during conversion treatment, of ∼0.11 ± 0.02 nm/s, was found for the first time, indicating constant kinetics of anodic reactions. The distinct process of aluminium consumption was assigned with loss of corrosion protection of the deposited coating material as evidenced in the electrochemical impedance spectroscopy. Based on the present data, a new mechanism of coating growth on aluminium

  5. Surface treatments for aluminium alloys

    Science.gov (United States)

    Ardelean, M.; Lascău, S.; Ardelean, E.; Josan, A.

    2018-01-01

    Typically, in contact with the atmosphere, the aluminium surface is covered with an aluminium oxide layer, with a thickness of less than 1-2μm. Due to its low thickness, high porosity and low mechanical strength, this layer does not protect the metal from corrosion. Anodizing for protective and decorative purposes is the most common method of superficial oxidation processes and is carried out through anodic oxidation. The oxide films, resulted from anodizing, are porous, have a thickness of 20-50μm, and are heat-resistant, stable to water vapour and other corrosion agents. Hard anodizing complies with the same obtains principles as well as decorative and protective anodization. The difference is in that hard anodizing is achieved at low temperatures and high intensity of electric current. In the paper are presented the results of decorative and hard anodization for specimens made from several aluminium alloys in terms of the appearance of the specimens and of the thickness of the anodized.

  6. Transparent Aluminum Oxide Films by Edge Anodization

    Science.gov (United States)

    Stott, Jonathan; Greenwood, Thomas; Winn, David

    In this paper we present our recent work on manufacturing thin (3 - 5 μm) films of porous aluminum(III) oxide [PAO] using a novel edge-anodization technique. With this modified anodization process, we are able to create transparent PAO films on top of insulating substrates such as glass or plastic. By controlling the processing parameters, the index of refraction of PAO films can be engineered to match the substrate, which gives us a durable reflection-free and scratch-resistant coating over conventional optics or LCD displays. Eventually we hope to create ordered porous aluminum oxide cladding around an optical fiber core, which could have a number of interesting optical properties if the pore spacing can be matched to the wavelength of light in the fiber. This work was funded by Fairfield University startup funding.

  7. Effect of plasma electrolytic oxidation on joining of AA 5052 aluminium alloy to polypropylene using friction stir spot welding

    OpenAIRE

    Aliasghari, S.; Ghorbani, M.; Skeldon, P.; Karami, H.; Movahedi, M.

    2017-01-01

    The effect of a plasma electrolytic oxidation (PEO) pre-treatment on joining of AA 5052 aluminium alloy and polypropylene by friction stir spot welding (FSSW) is investigated using lap tensile shear tests. Two surface conditions of the AA 5052 alloy are compared, one with a PEO pre-treatment in a silicate-based electrolyte, another without any pre-treatment. The resultant specimens are examined by high resolution scanning electron microscopy, thermogravimetric analysis and attenuated total re...

  8. Comparative studies of thin film growth on aluminium by AFM, TEM and GDOES characterization

    Science.gov (United States)

    Qi, Jiantao; Thompson, George E.

    2016-07-01

    In this present study, comparative studies of trivalent chromium conversion coating formation, associated with aluminium dissolution process, have been investigated using atomic force microscopy (AFM), transmission electron microscopy (TEM) and glow-discharge optical emission spectroscopy (GDOES). High-resolution electron micrographs revealed the evident and uniform coating initiation on the whole surface after conversion treatment for only 30 s, although a network of metal ridges was created by HF etching pre-treatment. In terms of conversion treatment process on electropolished aluminium, constant kinetics of coating growth, ∼0.30 ± 0.2 nm/s, were found after the prolonged conversion treatment for 600 s. The availability of electrolyte anions for coating deposition determined the growth process. Simultaneously, a proceeding process of aluminium dissolution during conversion treatment, of ∼0.11 ± 0.02 nm/s, was found for the first time, indicating constant kinetics of anodic reactions. The distinct process of aluminium consumption was assigned with loss of corrosion protection of the deposited coating material as evidenced in the electrochemical impedance spectroscopy. Based on the present data, a new mechanism of coating growth on aluminium was proposed, and it consisted of an activation period (0-30 s), a linear growth period (0.30 nm/s, up for 600 s) and limited growth period (0.17 nm/s, 600-1200 s). In addition, the air-drying post-treatment and a high-vacuum environment in the microscope revealed a coating shrinkage, especially in the coatings after conversion treatments for longer time.

  9. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  10. Photoconduction in silicon rich oxide films

    Science.gov (United States)

    Luna-López, J. A.; Aceves-Mijares, M.; Carrillo-López, J.; Morales-Sanchez, A.; Flores-Gracia, F. J.; Garcia-Salgado, G.

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  11. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  12. Indium-doped aluminium oxide as a non-radioactive test aerosol for aerosol experiments

    International Nuclear Information System (INIS)

    Drosselmeyer, E.; Mueller, H.L.; Seidel, A.; Pickering, S.

    1986-01-01

    For testing inhalation facilities it is advantageous to use a non-radioactive, low toxicity test aerosol which can be detected at low concentrations. These criteria are met by a mechanically generated aerosol of indium-doped alumina. Although some cases of lung fibroses have been associated with the inhalation of aluminium compounds in industry, aluminum oxide aerosols are generally considered to be non-toxic. Indium was chosen as a dopant material because (a) it is not normally present in the lung in detectable amounts, (b) it is chemically similar to aluminum and (c) it can be detected in trace amounts by neutron activation analysis (Friberg et al., 1979). Indium aerosols have the same advantages as radioactive tracers for ease of detection, but they are non-toxic during use. This combination of properties offers advantages that could be of use in a wider range of applications than hitherto used, e.g. in inhalation experiments. This paper describes nose-only inhalation experiments on rats using an aerosol of alumina doped with indium. (author)

  13. Recovery of lithium from geothermal water by amorphous hydrous aluminium oxide

    International Nuclear Information System (INIS)

    Wada, Hideo; Kitamura, Takao; Ooi, Kenta; Katoh, Shunsaku

    1984-01-01

    Effects of chemical composition, temperature, and lithium concentration of geothermal water on lithium recovery by amorphous hydrous aluminium oxide (a-HAO) were investigated in order to evaluate the feasibility of this process. The results are summarized as follows: (1) Among various chemical consituents in geothermal water, silica interfered with the lithium adsorption. The lithium uptake decreased when silica concentration exceeded 73 mg/l under 100 mg/50 ml a-HAO to solution ratio. (2) The lithium uptake decreased with an increase of adsorption temperature and was not observed above 40 deg C. At higher temperature, the crystallization of a-HAO to bayerite occurred prior to lithium adsorption. (3) The lithium uptake increased with an increase of lithium concentration. Lithium uptake comparable with lithium contents in lithium ores was obtained at the lithium concentration of 30 mg/l at 20 deg C. These results show that a-HAO is applicable to collect lithium from geothermal water if silica can be removed before lithium adsorption. (author)

  14. Electrical Conductivity of Molten Carbonate and Carbonate-Chloride Systems Coexisting with Aluminium Oxide Powder

    Science.gov (United States)

    Nikolaeva, Elena V.; Bovet, Andrey L.; Zakiryanova, Irina D.

    2017-12-01

    The electrical properties of composite electrolytes (suspensions) composed of α-Al2O3 powder and molten carbonate eutectic (Li2CO3-Na2CO3-K2CO3)eut or molten carbonate-chloride mixture 0.72(Li2CO3-Na2CO3-K2CO3)eut-0.28NaCl have been investigated by AC impedance method. This system shows a dependence of the electrical conductivity upon the temperature and the α-Al2O3 content. The specific electrical conductivity of the α-Al2O3/(Li2CO3-Na2CO3-K2CO3)eut system can be adequately described by the Maxwell equation for two-phase heterogeneous materials. The regression equation for the dependence of the specific conductivity of the α-Al2O3/(Li2CO3-Na2CO3-K2CO3)eut composite on the aluminium oxide concentration and temperature was obtained.

  15. Oxide growth on aluminium alloys in the presence of ammonium fluoborate

    International Nuclear Information System (INIS)

    Oliver, J.; Paterson, P.; Flavell, T.; Biddle, G.

    1996-01-01

    The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH 4 BF 4 . At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH 4 BF 4 atmosphere preheat conditions showed significant improvements. It was verified experimentally that above 500 deg C , AA5182 alloys undergo incipient melting at the grain boundaries with magnesium diffusing through to the surface. 5 refs., 1 fig

  16. Oxide growth on aluminium alloys in the presence of ammonium fluoborate

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, J.; Paterson, P.; Flavell, T. [Royal Melbourne Inst. of Tech., VIC (Australia); Biddle, G. [Alcoa Rolled Products (Australia)

    1996-12-31

    The aim of this study as to determine the mechanisms involved in using ammonium fluoborate as a reducing atmosphere when preheating a high magnesium content aluminium alloy. Rutherford Backscattering (RBS) has been the major technique used in the analysis of samples, it revealed significant reduction in both the diffusion of magnesium to the surface and the calculated oxide thickness in the presence of NH{sub 4}BF{sub 4}. At temperatures above 500 deg C in air, SEM images revealed depressions and voids due to incipient melting at various stages, around the grain boundaries. Grain boundaries effectively acted as pipes aiding the diffusion of magnesium to the surface. These results have been verified through compositional analysis with both RBS and auger electron spectroscopy (AES). Results from NH{sub 4}BF{sub 4} atmosphere preheat conditions showed significant improvements. It was verified experimentally that above 500 deg C , AA5182 alloys undergo incipient melting at the grain boundaries with magnesium diffusing through to the surface. 5 refs., 1 fig.

  17. Chemical oxidative polymerization of m-phenylenediamine and its derivatives using aluminium triflate as a co-catalyst

    OpenAIRE

    Amer, Ismael; Young, Desmond Austin; Vosloo, Hermanus C.M.

    2013-01-01

    Aromatic diamine monomers, including m-phenylenediamine (mPD), 2-methyl-m-phenylenediamine (2Me-mPD), 4-methyl-m-phenylenediamine (4Me-mPD) and trimethyl-mphenylenediamine (tMe-mPD), were polymerized by chemical oxidation using ammonium persulfate as an oxidant. Aluminium triflate (Al(OTf)3) was also used for the first time as a co-catalyst under various polymerization conditions. The polymerization yield was improved when Al(OTf)3 was introduced to the polymerization reaction ...

  18. Expression of metallothioneins I and II related to oxidative stress in the liver of aluminium-treated rats.

    Science.gov (United States)

    Ghorbel, Imen; Chaabane, Mariem; Elwej, Awatef; Boudawara, Ons; Abdelhedi, Sameh; Jamoussi, Kamel; Boudawara, Tahya; Zeghal, Najiba

    2016-10-01

    Hepatotoxicity, induced by aluminium chloride (AlCl 3 ), has been well studied but there are no reports about liver metallothionein (MT) genes induction. Therefore, it is of interest to establish the mechanism involving the relation between MT gene expression levels and the oxidative stress status in hepatic cells of aluminium-treated rats. Aluminium (Al) was administered to rats in their drinking water at a dose of 50 mg/kg body weight for three weeks. AlCl 3 provoked hepatotoxicity objectified by an increase in malondialdehyde (MDA), hydrogen peroxide (H 2 O 2 ), advanced oxidation protein products (AOPP), protein carbonyls (PCO) and a decrease in reduced glutathione (GSH), non-protein thiols (NPSH) and vitamin C. CAT and Glutathione peroxidase (GPx) activities were decreased while Mn-SOD gene expression, total Metallothionein content and MT I and MT II genes induction were increased. There are changes in plasma of some trace elements, albumin levels, transaminases, LDH and ALP activities. All these changes were supported by histopathological observations.

  19. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    Chemical Properties ZnO occurs  as white powder  known  as  zinc white or  as  the mineral  zincite.  Zinc  oxide   is  an  amphoteric   oxide .  It  is...AFRL-OSR-VA-TR-2015-0044 Review of Zinc Oxide Thin Films Tom Otiti COLLEGE OF COMPUTING AND INFORMATION SCIENCE MAKERERE U Final Report 12/23/2014...COVERED (From - To)      01-07-2011 to 30-06-2014 4.  TITLE AND SUBTITLE ZINC OXIDE MATERIALS FOR PHOTOVOLTAIC APPLICATIONS 5a.  CONTRACT NUMBER 5b

  20. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  1. Optical and morphological investigation of aluminium and nickel ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 38; Issue 2. Optical and morphological investigation of aluminium and nickel oxide composite films deposited by spray pyrolysis method as a basis of solar thermal absorber. A Bagheri Khatibani S M Rozati. Volume 38 Issue 2 April 2015 pp 319-326 ...

  2. Oxide films on magnesium and magnesium alloys

    International Nuclear Information System (INIS)

    Shih, T.-S.; Liu, J.-B.; Wei, P.-S.

    2007-01-01

    Magnesium alloys are very active and readily ignite during heating and melting. In this study, we discuss the combustion of magnesium and magnesium alloys and propose prospective anti-ignition mechanisms for magnesium alloys during the heating process. When magnesium and magnesium alloys were heated in air, the sample surfaces produced layers of thermally formed oxides. These thermally formed oxides played an important role in affecting the combustion of the magnesium and magnesium alloys. When magnesium was heated in air, brucite that formed in the early stage was then transformed into periclase by dehydroxylation. By extending the heating time, more periclase formed and increased in thickness which was associated with microcracks formation. When magnesium was heated in a protective atmosphere (SF 6 ), a film of MgF 2 formed at the interface between the oxide layer and the Mg substrate. This film generated an anti-ignition behavior which protected the substrate from oxidation. When solution-treated AZ80 alloy was heated, spinel developed at the interface between the thermally formed oxide layer and the Mg substrate, improving the anti-ignition properties of the substrate. In addition, we also explain the effects of beryllium in an AZB91 alloy on the ignition-proofing behavior

  3. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  4. Oxidation of an aluminium-magnesium alloy in liquid state. Methodology of determination of mechanisms from not necessarily repeatable experiments

    International Nuclear Information System (INIS)

    Surla, Karine

    1998-01-01

    This research thesis reports the study of the oxidation of an aluminium-5 pc magnesium alloy in its liquid state in an oxygen environment, using thermogravimetric analysis and that of magnesium in its solid state. In a first part, the author reports a thermodynamic and bibliographical study on magnesium transformation in its solid state (Mg/O 2 and Mg/H 2 O systems, transformation with dry and humid synthetic air, oxidation inhibitors) and on Al-Mg alloy transformation in presence of oxygen (thermodynamic properties of aluminium-rich Al-Mg alloys, Al-Mg/O 2 /N 2 and Al-Mg/O 2 /N 2 /H 2 O systems). The next parts address the selection of reaction systems for the different cases (oxidation of solid magnesium in oxygen, oxidation of the Al-Mg alloy in oxygen), the modelling of the formation of magnesia from solid magnesium and from the Al-Mg alloy, and the modelling of the liquid Al-Mg A5182 alloy oxidation in oxygen [fr

  5. Quercetin protects against aluminium induced oxidative stress and promotes mitochondrial biogenesis via activation of the PGC-1α signaling pathway.

    Science.gov (United States)

    Sharma, Deep Raj; Sunkaria, Aditya; Wani, Willayat Yousuf; Sharma, Reeta Kumari; Verma, Deepika; Priyanka, Kumari; Bal, Amanjit; Gill, Kiran Dip

    2015-12-01

    The present investigation was carried out to elucidate a possible molecular mechanism related to the protective effect of quercetin administration against aluminium-induced oxidative stress on various mitochondrial respiratory complex subunits with special emphasis on the role of PGC-1α and its downstream targets, i.e. NRF-1, NRF-2 and Tfam in mitochondrial biogenesis. Aluminium lactate (10mg/kg b.wt./day) was administered intragastrically to rats, which were pre-treated with quercetin 6h before aluminium (10mg/kg b.wt./day, intragastrically) for 12 weeks. We found a decrease in ROS levels, mitochondrial DNA oxidation and citrate synthase activity in the hippocampus (HC) and corpus striatum (CS) regions of rat brain treated with quercetin. Besides this an increase in the mRNA levels of the mitochondrial encoded subunits - ND1, ND2, ND3, Cyt b, COX1, COX3 and ATPase6 along with increased expression of nuclear encoded subunits COX4, COX5A and COX5B of electron transport chain (ETC). In quercetin treated group an increase in the mitochondrial DNA copy number and mitochondrial content in both the regions of rat brain was observed. The PGC-1α was up regulated in quercetin treated rats along with NRF-1, NRF-2 and Tfam, which act downstream from PGC-1α. Electron microscopy results revealed a significant decrease in the mitochondrial cross-section area, mitochondrial perimeter length and increase in mitochondrial number in case of quercetin treated rats as compared to aluminium treated ones. Therefore it seems quercetin increases mitochondrial biogenesis and makes it an almost ideal flavanoid to control or limit the damage that has been associated with the defective mitochondrial function seen in many neurodegenerative diseases. Copyright © 2015 Elsevier Inc. All rights reserved.

  6. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Metallic zinc thin films were deposited onto glass substrates using vacuum thermal evaporation method. By thermal oxidation of as-deposited Zn films, in ambient conditions, at different temperatures (570,. 670 and 770 K, respectively, for 1 h) zinc oxide thin films were obtained. The structural characteristics of the.

  7. Hesperidin ameliorates cognitive dysfunction, oxidative stress and apoptosis against aluminium chloride induced rat model of Alzheimer's disease.

    Science.gov (United States)

    Justin Thenmozhi, Arokiasamy; William Raja, Tharsius Raja; Manivasagam, Thamilarasan; Janakiraman, Udaiyappan; Essa, Musthafa Mohamed

    2017-07-01

    Deregulation of metal ion homeostasis has been assumed as one of the key factors in the progression of neurodegenerative diseases. Aluminium (Al) has been believed as a major risk factor for the cause and progression of Alzheimer's disease (AD). In our lab, we have previously reported that hesperidin, a citrus bioflavonoid reversed memory loss caused by aluminium intoxication through attenuating acetylcholine esterase activity and the expression of Amyloid β biosynthesis related markers. Al has been reported to cause oxidative stress associated apoptotic neuronal loss in the brain. So in the present study, protective effect of hesperidin against aluminium chloride (AlCl 3 ) induced cognitive impairment, oxidative stress and apoptosis was studied. Male Wistar rats were divided into control, AlCl 3 treated (100 mg/kg., b.w.), AlCl 3 and hesperidin (100 mg/kg., b.w.) co-treated and hesperidin alone treated groups. In control and experimental rats, learning and memory impairment were measured by radial arm maze, elevated plus maze and passive avoidance tests. In addition, oxidative stress and expression of pro and anti-apoptotic markers were also evaluated. Intraperitoneal injection of AlCl 3 (100 mg/kg., b.w.) for 60 days significantly enhanced the learning and memory deficits, levels of thiobarbituric acid reactive substances and the expression of Bax and diminished the levels of reduced glutathione, activities of enzymatic antioxidants and the expression of B-cell lymphoma-2 (Bcl-2) as compared to control group in the hippocampus, cortex, and cerebellum. Coadministration of hesperidin (100 mg/kg., b.w. oral) for 60 days prevented the cognitive deficits, biochemical anomalies and apoptosis induced by AlCl 3 treatment. Results of the present study demonstrated that hesperidin could be a potential therapeutic agent in the treatment of oxidative stress and apoptosis associated neurodegenerative diseases including AD.

  8. Soil microbial community responses to contamination with silver, aluminium oxide and silicon dioxide nanoparticles.

    Science.gov (United States)

    McGee, C F; Storey, S; Clipson, N; Doyle, E

    2017-04-01

    Soil microorganisms are key contributors to nutrient cycling and are essential for the maintenance of healthy soils and sustainable agriculture. Although the antimicrobial effects of a broad range of nanoparticulate substances have been characterised in vitro, little is known about the impact of these compounds on microbial communities in environments such as soil. In this study, the effect of three widely used nanoparticulates (silver, silicon dioxide and aluminium oxide) on bacterial and fungal communities in an agricultural pastureland soil was examined in a microcosm-based experiment using a combination of enzyme analysis, molecular fingerprinting and amplicon sequencing. A relatively low concentration of silver nanoparticles (AgNPs) significantly reduced total soil dehydrogenase and urease activity, while Al 2 O 3 and SiO 2 nanoparticles had no effect. Amplicon sequencing revealed substantial shifts in bacterial community composition in soils amended with AgNPs, with significant decreases in the relative abundance of Acidobacteria and Verrucomicrobia and an increase in Proteobacteria. In particular, the relative abundance of the Proteobacterial genus Dyella significantly increased in AgNP amended soil. The effects of Al 2 O 3 and SiO 2 NPs on bacterial community composition were less pronounced. AgNPs significantly reduced bacterial and archaeal amoA gene abundance in soil, with the archaea more susceptible than bacteria. AgNPs also significantly impacted soil fungal community structure, while Al 2 O 3 and SiO 2 NPs had no effect. Several fungal ribotypes increased in soil amended with AgNPs, compared to control soil. This study highlights the need to consider the effects of individual nanoparticles on soil microbial communities when assessing their environmental impact.

  9. Interaction of amines with native aluminium oxide layers in non-aqueous environment: Application to the understanding of the formation of epoxy-amine/metal interphases

    Energy Technology Data Exchange (ETDEWEB)

    Mercier, D.; Rouchaud, J.-C. [Centre d' Etudes de Chimie Metallurgique, CNRS, 15 rue Georges Urbain, 94407 Vitry Cedex (France); Barthes-Labrousse, M.-G. [Centre d' Etudes de Chimie Metallurgique, CNRS, 15 rue Georges Urbain, 94407 Vitry Cedex (France)], E-mail: marie-genevieve.barthes@u-psud.fr

    2008-08-15

    Interaction of propylamine (PA), 1,2-diaminoethane (DAE) or 3-aminomethyl-3,5,5-trimethylcyclohexylamine (isophorone diamine, IPDA) with native aluminium oxide layers in non-aqueous environment has been studied using time-resolved inductively coupled plasma optical emission spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS). The formation of several surface complexes has been evidenced. Monodentate and bidentate metal-bond surface complexes (MBSC) result from interactions between the amine terminations of the molecule and aluminium cations by donation of the N lone electron pair to the metal ion (Lewis-like mechanism leading to O-Al...N bonds). Monodentate and bidentate hydrogen-bond surface complexes (HBSC) are due to interaction of the amino group with surface hydroxyl groups by protonation of the amine termination (Bronsted-like mechanism leading to the formation of Al-OH...N bonds) or interaction with carbonaceous contamination (C{sub x}O{sub y}H{sub z}...N bonds). Diamines can also form mixed complexes with one amino group forming an O-Al...N bond and the other group forming an Al-OH...N or C{sub x}O{sub y}H{sub z}...N bond. Al-OH...N and C{sub x}O{sub y}H{sub z}...N bonds are less stable under vacuum than O-Al...N bonds, leading to partial desorption of the DAE molecules in vacuum and modification of the interaction modes. Only DAE and IPDA can lead to partial dissolution of the aluminium native (hydr)oxide films. A detailed mechanism of dissolution has been proposed based on the formation of mononuclear bidentate (chelate) MBSC by ligand exchange between the terminal {eta}{sup 1}-OH and bridged {mu}{sub 2}-OH surface sites and the amino terminations of the molecule. The detachment of this complex from the surface is likely to be the precursor step to the formation of the interphase in epoxy-amine/metal systems.

  10. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  11. Dry And Ringer Solution Lubricated Tribology Of Thin Osseoconductive Metal Oxides And Diamond-Like Carbon Films

    Directory of Open Access Journals (Sweden)

    Waldhauser W.

    2015-09-01

    Full Text Available Achieving fast and strong adhesion to jawbone is essential for dental implants. Thin deposited films may improve osseointegration, but they are prone to cohesive and adhesive fracture due to high stresses while screwing the implant into the bone, leading to bared, less osteoconductive substrate surfaces and nano- and micro-particles in the bone. Aim of this work is the investigation of the cohesion and adhesion failure stresses of osteoconductive tantalum, titanium, silicon, zirconium and aluminium oxide and diamond-like carbon films. The tribological behaviour under dry and lubricated conditions (Ringer solution reveals best results for diamond-like carbon, while cohesion and adhesion of zirconium oxide films is highest.

  12. Formation of zinc oxide film by boiling metallic zinc film in ultrapure water

    Energy Technology Data Exchange (ETDEWEB)

    Qiu Zhiyong; Nadamura, Yuichiro [Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, 278-8510 Chiba (Japan); Ishiguro, Takashi, E-mail: ishiguro@rs.noda.tus.ac.j [Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, 278-8510 Chiba (Japan)

    2010-08-31

    A simple method for forming zinc oxide (ZnO) films has been discovered. Radio-frequency (rf) sputtered metallic zinc (Zn) film is boiled in ultrapure water at 368 K. The opaque Zn film changes into a transparent film. It is confirmed by transmission electron microscopy and X-ray diffraction that the transparent film is hexagonal ZnO. Optical and morphological properties of the ZnO film are discussed.

  13. Nigella sativa oil reduces aluminium chloride-induced oxidative injury in liver and erythrocytes of rats.

    Science.gov (United States)

    Bouasla, Ihcene; Bouasla, Asma; Boumendjel, Amel; Messarah, Mahfoud; Abdennour, Cherif; Boulakoud, Mohamed Salah; El Feki, Abdelfattah

    2014-12-01

    The present study was planned to investigate the protective effects of Nigella sativa oil (NSO) supplementation against aluminium chloride (AlCl3)-induced oxidative damage in liver and erythrocytes of rats. Simultaneously, a preliminary phytochemical study was affected in order to characterize the bioactive components containing in the NSO using chemical assays. The antioxidant capacities of NSO were evaluated by DPPH assay. The results showed that NSO was found to contain large amounts of total phenolics, flavonoids and tannins. Twenty-four rats were equally divided into two groups, in which group A received standard diet, whereas group B treated daily with an oral gavage dose of 2 ml NSO/kg body weight. After 5 weeks pretreatment, both groups were divided again into two subgroups (A and B) of six animals each and treated for other 3 weeks. Therefore, subgroup A1 was served as a control which received standard diet, but subgroup A2 received AlCl3 (34 mg/kg bw mixed with food). Subgroup B1 received both AlCl3 and NSO; however, subgroup B2 received NSO only. Results showed that AlCl3 exhibited an increase in white blood cell counts and a marked decrease in erythrocyte counts and haemoglobin content. Plasma aspartate transaminase, alanine transaminase, alkaline phosphatase and lactate dehydrogenase activities and total bilirubin concentration were higher in AlCl3 group than those of the control, while albumin and total protein concentration were significantly lower. Compared to the control, a significant raise of hepatic and erythrocyte malondialdehyde level associated with a decrease in reduced glutathione content, glutathione peroxidase, superoxide dismutase and catalase, activities of AlCl3 treated rats. However, the administration of NSO alone or combined with AlCl3 has improved the status of all parameters studied. It can be concluded that AlCl3 has induced the oxidative stress, altered the biochemical parameters and the hepatic histological profile, but the

  14. Laser transmission welding of polylactide to aluminium thin films for applications in the food-packaging industry

    Science.gov (United States)

    Pagano, Nunziante; Campana, Giampaolo; Fiorini, Maurizio; Morelli, Raffaele

    2017-06-01

    Laser transmission welding is a suitable technology to join thin films of similar or dissimilar materials without any addition of chemical solvents or adhesives. This process represents a very important opportunity in the case of packaging applications (for example in food and pharmaceutical sectors) where the realisation of strong welds by avoiding the contact between the thermal source and the processed materials and, furthermore, without using any third material that could contaminate the contents, is reliable and relevant. The aim of this paper is to prove the feasibility of the laser transmission welding of polylactide to aluminium thin films by means of laser transmission welding through the use of a low power pulsed wave fibre laser. Laser joint samples were realised, analysed by optical microscopy to reveal possible defects and to evaluate the weld width and tested to measure the mechanical tensile strength. An accurate relationship between the joint quality and both the welding speed and the k-factor, which represents the delivered energy per unit length and affects the bonding mechanism at the interface, was determined. The achieved feasibility area is extremely narrow and possible only for the higher value of the average power. The joint tensile strength was proven to be in a proportional relationship with the effective bonded area and reached satisfactory values.

  15. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  16. Mobility of chemisorbed molecules and surface regeneration of active centers during dehydration of isopropanol on aluminium oxide and aluminosilicate

    International Nuclear Information System (INIS)

    Makhlis, L.A.; Vasserberg, V.Eh.

    1976-01-01

    By a differential isotope method involving 14 C the authors have investigated the surface mobility of chemisorbed molecules of isopropanol during its dehydration in an adsorption layer on aluminium oxide and aluminosilicate. The chemisorbed alcohol molecules possess marked surface mobility which plays a decisive part in the mechanism of surface regeneration of the active catalyst centers in the process of dehydration. The cessation of the reaction long before the adsorbed alcohol is completely used up is explained by the hypothesis that there is local overpopulation of the active sectors by water formed by the reaction; this hinders further surface regeneration and repetition of the elementary events of dehydration

  17. Zinc modulates aluminium-induced oxidative stress and cellular injury in rat brain.

    Science.gov (United States)

    Singla, Neha; Dhawan, D K

    2014-10-01

    Dysregulation of metal homeostasis has been perceived as one of the key factors in the progression of neurodegeneration. Aluminium (Al) has been considered as a major risk factor, which is linked to several neurodegenerative diseases, especially Alzheimer's disease, whereas zinc (Zn) has been reported as a vital dietary element, which regulates a number of physiological processes in central nervous system. The present study was conducted to explore the protective potential of zinc, if any, in ameliorating neurotoxicity induced by aluminium. Male Sprague Dawley rats received either aluminium chloride (AlCl3) orally (100 mg kg(-1) b.wt. per day), zinc sulphate (ZnSO4) at a dose level of 227 mg L(-1) in drinking water or combined treatment of aluminium and zinc for 8 weeks. Aluminium treatment significantly elevated the levels of lipid peroxidation and reactive oxygen species as well as the activities of catalase, superoxide dismutase and glutathione reductase, which however were decreased following Zn co-treatment of Al-treated rats. In contrast, Al treatment decreased the activities of glutathione-S-transferase as well as the levels of reduced glutathione, oxidised glutathione and total glutathione, but co-administration of Zn to Al-treated animals increased these levels. Furthermore, Al treatment caused a significant increase in the levels of Fe and Mn as well as of Al but decreased the Zn and metallothionein levels. In the Zn-supplemented animals, the levels of Al, Fe, Mn were found to be significantly decreased, whereas the levels of metallothionein as well as Zn were increased. Moreover, histopathological alterations such as vacuolization and loss of Purkinje cells were also evident following Al treatment, which showed improvement upon Zn supplementation. Therefore, zinc has the potential to alleviate aluminium-induced neurodegeneration.

  18. Degradation process in organic thin film devices fabricated using ...

    Indian Academy of Sciences (India)

    hexylthiophene); organic semiconductors; conducting polymers; degradation. ... The stability of regioregular poly(3-hexylthiophene 2,5-diyl) (P3HT) thin films sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes have ...

  19. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  20. UV photodissociation spectroscopy of oxidized undecylenic acid films.

    Science.gov (United States)

    Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

    2006-03-16

    Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

  1. Monte Carlo simulation of electron depth distribution and backscattering for carbon films deposited on aluminium as a function of incidence angle and primary energy

    International Nuclear Information System (INIS)

    Dapor, Maurizio

    2005-01-01

    Carbon films are deposited on various substrates (polymers, polyester fabrics, polyester yarns, metal alloys) both for experimental and technological motivations (medical devices, biocompatible coatings, food package and so on). Computational studies of the penetration of electron beams in supported thin film of carbon are very useful in order to compare the simulated results with analytical techniques data (obtained by scanning electron microscopy and/or Auger electron spectroscopy) and investigate the film characteristics. In the present paper, the few keV electron depth distribution and backscattering coefficient for the special case of film of carbon deposited on aluminium are investigated, by a Monte Carlo simulation, as a function of the incidence angle and primary electron energy. The simulated results can be used as a way to evaluate the carbon film thickness by a set of measurements of the backscattering coefficient

  2. Aluminium hydro(oxide)–based (AO) adsorbent for defluoridation of ...

    African Journals Online (AJOL)

    High resolution 27Al Magic Angle Spinning Nuclear Magnetic Resonance (27Al MAS NMR) spectra of AO, AA, and PB were recorded, to analyse the coordination geometry of solid Al species and the results showed that aluminium is coordinated octahedrally and tetrahedrally in all cases. Regeneration experiments showed ...

  3. The influence of nitrogen and oxygen additions on the thermal characteristics of aluminium-based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Macedo, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Couto, F.M. [Physics Sciences Laboratory, Norte Fluminense State University, 28013-602 Campos–RJ (Brazil); Rodrigues, M.S.; Lopes, C. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Pedrosa, P. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Universidade do Porto, Faculdade de Engenharia, Departamento de Engenharia Metalúrgica e de Materiais, Rua Dr. Roberto Frias, s/n, 4200-465 Porto (Portugal); Polcar, T. [Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, Prague 6 (Czech Republic); Engineering Materials & nCATS, FEE, University of Southampton, Highfield Campus, SO17 1BJ, Southampton (United Kingdom); Marques, L.; Vaz, F. [Centro de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-08-01

    The ternary aluminium oxynitride (AlN{sub x}O{sub y}) system offers the possibility to obtain a wide range of properties by tailoring the ratio between pure Al, AlN{sub x} and AlO{sub y} and therefore opening a significant number of possible applications. In this work the thermal behaviour of AlN{sub x}O{sub y} thin films was analysed by modulated infrared radiometry (MIRR), taking as reference the binary AlO{sub y} and AlN{sub x} systems. MIRR is a non-contact and non-destructive thermal wave measurement technique based on the excitation, propagation and detection of temperature oscillations of very small amplitudes. The intended change of the partial pressure of the reactive gas (N{sub 2} and/or O{sub 2}) influenced the target condition and hence the deposition characteristics which, altogether, affected the composition and microstructure of the films. Based on the MIRR measurements and their qualitative and quantitative interpretation, some correlations between the thermal transport properties of the films and their chemical/physical properties have been found. Furthermore, the potential of such technique applied in this oxynitride system, which present a wide range of different physical responses, is also discussed. The experimental results obtained are consistent with those reported in previous works and show a high potential to fulfil the demands needed for the possible applications of the systems studied. They are clearly indicative of an adequate thermal response if this particular thin film system is aimed to be applied in small sensor devices or in electrodes for biosignal acquisition, such as those for electroencephalography or electromyography as it is the case of the main research area that is being developed in the group. - Highlights: • AlN{sub x}, AlO{sub y} and AlN{sub x}O{sub y} films were deposited by magnetron sputtering. • Discharge characteristics were compared between systems. • Different x and y coefficients were obtained.

  4. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  5. Improved zinc oxide film for gas sensor applications

    Indian Academy of Sciences (India)

    Unknown

    to the other CVD techniques, simultaneously yielding reasonably good quality films for sensor applications. The deposited films were confirmed to be polycrystalline zinc oxide by XRD analysis. The change in electrical resistance of the films was measured while exposing those to the different concentrations of DMA vapour.

  6. Anti-corrosive Conversion Coating on Aluminium Alloys Using High Temperature Steam

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

    Aluminium is extensively used as a structural material due to its excellent strength to weight ratio and corrosion resistance properties. The surface of aluminium under normal conditions has a thin oxide film (1-10nm) which provides corrosion resistance. However due to lower thickness, flaws...... and heterogeneity of native oxide layer does not provide long time corrosion resistance and adhesion of organic coating for a particular function in different environments. In order to enhance the corrosion resistance and adhesion of organic coating, the aluminium native oxide layer is treated to transform...... or convert to a functional conversion coating. In the last several decades chromate conversion coating (CrCCs) have been the most common conversion coatings used for aluminium alloys. Due to the toxicity of the hexavalent chrome, however, environmental friendly alternatives to CrCCs have been investigated...

  7. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  8. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    Transparent metal oxide thin films of samarium oxide (Sm 2 O 3 ) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure.

  9. Properties of advanced (reduced) graphene oxide-alginate biopolymer films

    NARCIS (Netherlands)

    Vilcinskas, K.

    2016-01-01

    In this work, properties of Calcium alginate-reduced graphene oxide and Barium alginate‐reduced graphene oxide composite films are explored. In addition, the properties of the divalent metal ion-cross-linked alginate composite films are compared to the analogous properties of uncross‐linked Sodium

  10. Formation of corrosion-resistant oxide film on uranium

    International Nuclear Information System (INIS)

    Petit, G.S.

    1976-01-01

    A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

  11. Flexible electrostatic nanogenerator using graphene oxide film.

    Science.gov (United States)

    Tian, He; Ma, Shuo; Zhao, Hai-Ming; Wu, Can; Ge, Jie; Xie, Dan; Yang, Yi; Ren, Tian-Ling

    2013-10-07

    Recently, graphene oxide (GO) super capacitors with ultra-high energy densities have received significant attention. In addition to their use in energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as energy harvesting. Here, a flexible nanogenerator based on GO film is designed. A multilayer structure Al/PI/GO/PI/ITO is made on a flexible PET substrate. The GO nanogenerator could generate a peak voltage of 2 V with a current of 30 nA upon the repetitive application of a 15 N force with a frequency of 1 Hz. Moreover, the output voltage was increased to 34.4 V upon increasing the frequency of force application to 10 Hz. Compared with control samples, embedding GO film with a release structure into the device could significantly enhance the output voltage from 0.1 V to 2.0 V. The mechanism of our nanogenerator can be explained by an electrostatic effect, which is fundamentally different from that of previously reported piezoelectric and triboelectric generators. In this manuscript, we demonstrate flexible nanogenerators with large-area graphene based materials, which may open up new avenues of research with regard to applications in energy harvesting.

  12. Development of alpha spectroscopy method with solid state nuclear track detector using aluminium thin films

    International Nuclear Information System (INIS)

    Dwaikat, N.

    2015-10-01

    This work presents the development of alpha spectroscopy method with Solid-state nuclear track detectors using aluminum thin films. The resolution of this method is high, and it is able to discriminate between alpha particles at different incident energy. It can measure the exact number of alpha particles at specific energy without needing a calibration of alpha track diameter versus alpha energy. This method was tested by using Cf-252 alpha standard source at energies 5.11 MeV, 3.86 MeV and 2.7 MeV, which produced by the variation of detector -standard source distance. On front side, two detectors were covered with two Aluminum thin films and the third detector was kept uncovered. The thickness of Aluminum thin films was selected carefully (using SRIM 2013) such that one of the films will block the lower two alpha particles (3.86 MeV and 2.7 MeV) and the alpha particles at higher energy (5.11 MeV) can penetrate the film and reach the detectors surface. The second thin film will block alpha particles at lower energy of 2.7 MeV and allow alpha particles at higher two energies (5.11 MeV and 3.86 MeV) to penetrate and produce tracks. For uncovered detector, alpha particles at three different energies can produce tracks on it. For quality assurance and accuracy, the detectors were mounted on thick enough copper substrates to block exposure from the backside. The tracks on the first detector are due to alpha particles at energy of 5.11 MeV. The difference between the tracks number on the first detector and the tracks number on the second detector is due to alpha particles at energy of 3.8 MeV. Finally, by subtracting the tracks number on the second detector from the tracks number on the third detector (uncovered), we can find the tracks number due to alpha particles at energy 2.7 MeV. After knowing the efficiency calibration factor, we can exactly calculate the activity of standard source. (Author)

  13. Development of alpha spectroscopy method with solid state nuclear track detector using aluminium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dwaikat, N., E-mail: ndwaikat@kfupm.edu.sa [King Fahd University of Petroleum and Minerals, College of Sciences, Department of Physics, Dhahran 31261 (Saudi Arabia)

    2015-10-15

    This work presents the development of alpha spectroscopy method with Solid-state nuclear track detectors using aluminum thin films. The resolution of this method is high, and it is able to discriminate between alpha particles at different incident energy. It can measure the exact number of alpha particles at specific energy without needing a calibration of alpha track diameter versus alpha energy. This method was tested by using Cf-252 alpha standard source at energies 5.11 MeV, 3.86 MeV and 2.7 MeV, which produced by the variation of detector -standard source distance. On front side, two detectors were covered with two Aluminum thin films and the third detector was kept uncovered. The thickness of Aluminum thin films was selected carefully (using SRIM 2013) such that one of the films will block the lower two alpha particles (3.86 MeV and 2.7 MeV) and the alpha particles at higher energy (5.11 MeV) can penetrate the film and reach the detectors surface. The second thin film will block alpha particles at lower energy of 2.7 MeV and allow alpha particles at higher two energies (5.11 MeV and 3.86 MeV) to penetrate and produce tracks. For uncovered detector, alpha particles at three different energies can produce tracks on it. For quality assurance and accuracy, the detectors were mounted on thick enough copper substrates to block exposure from the backside. The tracks on the first detector are due to alpha particles at energy of 5.11 MeV. The difference between the tracks number on the first detector and the tracks number on the second detector is due to alpha particles at energy of 3.8 MeV. Finally, by subtracting the tracks number on the second detector from the tracks number on the third detector (uncovered), we can find the tracks number due to alpha particles at energy 2.7 MeV. After knowing the efficiency calibration factor, we can exactly calculate the activity of standard source. (Author)

  14. Aluminium oxide nanoparticles induce mitochondrial-mediated oxidative stress and alter the expression of antioxidant enzymes in human mesenchymal stem cells.

    Science.gov (United States)

    Alshatwi, Ali A; Subbarayan, Periasamy Vaiyapuri; Ramesh, E; Al-Hazzani, Amal A; Alsaif, Mohammed A; Alwarthan, Abdulrahman A

    2013-01-01

    An urgent need for toxicological studies on aluminium oxide nanoparticles (Al(2) [Formula: see text]NPs) has arisen from their rapidly emerging range of applications in the food and agricultural sectors. Despite the widespread use of nanoscale aluminium and its composites in the food industry, there is a serious lack of information concerning the biological activities of Al(2) [Formula: see text]NPs (ANPs) and their impact on human health. In this preliminary study, the effects of ANPs on metabolic stress in human mesenchymal stem cells (hMSCs) were analysed. The results showed dose-dependent effects, including cellular toxicity. The mitochondrial membrane potential in the hMSCs decreased with increasing ANP concentrations after 24 h of exposure. The expression levels of oxidative stress-responsive enzymes were monitored by RT-PCR. The expression levels of CYP1A and POR were up-regulated in response to ANPs, and a significant down-regulation in the expression of the antioxidant enzyme SOD was observed. Further, dose-dependent changes in the mRNA levels of GSTM3, GPX and GSR were noted. These findings suggest that the toxicity of ANPs in hMSCs may be mediated through an increase in oxidative stress. The results of this study clearly demonstrate the nanotoxicological effects of ANPs on hMSCs, which will be useful for nanotoxicological indexing.

  15. Design of the fuel element 'snow-flake' in uranium oxide, canned with aluminium, for the experimental reactor EL 3 (1960)

    International Nuclear Information System (INIS)

    Gauthron, M.; Guibert, B.

    1960-01-01

    This report sums up the main studies have been carried out on the fuel element 'Snowflake' (uranium oxide, canned with aluminium), designed to replace the present element of the experimental reactor EL3 in order to increase the reactivity without modifying the neutron flux/thermal power ratio. (author) [fr

  16. Structural and magnetic properties of nickel nanowires grown in porous anodic aluminium oxide template by electrochemical deposition technique

    Science.gov (United States)

    Nugraha Pratama, Sendi; Kurniawan, Yudhi; Muhammady, Shibghatullah; Takase, Kouichi; Darma, Yudi

    2018-03-01

    We study the formation of nickel nanowires (Ni NWs) grown in porous anodic aluminium oxide (AAO) template by the electrochemical deposition technique. Here, the initial AAO template was grown by anodization of aluminium substrate in sulphuric acid solution. The cross-section, crystal structure, and magnetic properties of Ni NWs system were characterized by field-emission SEM, XRD, and SQUID. As a result, the highly-ordered Ni NWs are observed with the uniform diameter of 27 nm and the length from 31 to 163 nm. Based on XRD spectra analysis, Ni NWs have the face-centered cubic structure with the lattice parameter of 0.35 nm and average crystallite size of 17.19 nm. From SQUID measurement at room temperature, by maintaining the magnetic field perpendicular to Ni NWs axis, the magnetic hysteresis of Ni NWs system show the strong ferromagnetism with the coercivity and remanence ratio of ∼148 Oe and ∼0.23, respectively. The magnetic properties are also calculated by means of generalized gradient approximation methods. From the calculation result, we show that the ferromagnetism behavior comes from Ni NWs without any contribution from AAO template or the substrate. This study opens the potential application of Ni NWs system for novel functional magnetic devices.

  17. Amorphous tin-cadmium oxide films and the production thereof

    Science.gov (United States)

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  18. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    Energy Technology Data Exchange (ETDEWEB)

    Sposito, A., E-mail: as11g10@orc.soton.ac.uk; Eason, R. W. [Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ (United Kingdom); Gregory, S. A.; Groot, P. A. J. de [Physics and Astronomy, University of Southampton, Southampton SO17 1BJ (United Kingdom)

    2014-02-07

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi{sub 2}O{sub 3} or a CeO{sub 2} target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO{sub 2} phase.

  19. Combinatorial pulsed laser deposition of doped yttrium iron garnet films on yttrium aluminium garnet

    International Nuclear Information System (INIS)

    Sposito, A.; Eason, R. W.; Gregory, S. A.; Groot, P. A. J. de

    2014-01-01

    We investigate the crystalline growth of yttrium iron garnet (YIG) films doped with bismuth (Bi) and cerium (Ce) by combinatorial pulsed laser deposition, co-ablating a YIG target and either a Bi 2 O 3 or a CeO 2 target, for applications in microwave and optical communications. Substrate temperature is critical for crystalline growth of YIG with simultaneous inclusion of Bi in the garnet lattice, whereas Ce is not incorporated in the garnet structure, but forms a separate CeO 2 phase

  20. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  1. Facile synthesis of aluminium doped zinc oxide-polyaniline hybrids for photoluminescence and enhanced visible-light assisted photo-degradation of organic contaminants

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Mousumi [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Ghosh, Amrita; Mondal, Anup [Department of Chemistry, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata 700032, West Bengal (India); Ganguly, Saibal [Department of Chemical Engineering, BITS Pilani, K K Birla Goa Campus, NH 17 B Bypass Road, Zuarinagar, Sancoale, Goa 403726 (India); Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal (India)

    2017-04-30

    Graphical abstract: The present work focuses on the synergistic effect of a novel hybrid hetero structure (n-type aluminum doped zinc oxide and p-type polyaniline), combining both sol-gel and in-situ oxidative polymerization method and studying its photoluminescence (PL), photocatalytic, electrochemical impedance spectroscopy (EIS), linear scan voltammetry (LSV) and photocurrent properties. - Highlights: • Aluminium doped zinc oxide-polyaniline (PAZ) hybrids were prepared by polymerization of aniline using aluminium doped zinc oxide nanorod templates. • The hybrids were used as visible light photocatalysts for methyl orange (MO) and rose bengal (RB) dye degradation. • First order rate constants of the photocatalytic process were evaluated as 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes respectively. • Photoluminescence and electrochemical properties were in accord with the photocatalytic performance of the hybrid. - Abstract: The emergence of organic-inorganic photoactive materials has led to marked progress in the field of heterogeneous visible-light photocatalysis. Visible-light active aluminium doped zinc oxide-polyaniline (PAZ) hybrid was prepared employing in-situ oxidative polymerization of polyaniline (PANI) in the presence of aluminium doped zinc oxide (AlZnO) nanorods, synthesized via sol-gel route. The compositions, structural and optical properties of the synthesized hybrids were characterized. Among various samples, the 22 wt% aluminium doped zinc oxide-polyaniline (PAZ 3) hybrid show the best photocatalytic action for the degradation of methyl orange (MO) and rose bengal (RB) dyes under visible-light illumination, even after repeated use. The performance of the photocatalytic process was determined by the first order rate constant, 1.77 × 10{sup −2} min{sup −1} and 2.61 × 10{sup −2} min{sup −1} for MO and RB dyes, respectively. Scavenger test was used to determine the role of active

  2. Trophic transfer potential of aluminium oxide nanoparticles using representative primary producer (Chlorella ellipsoides) and a primary consumer (Ceriodaphnia dubia).

    Science.gov (United States)

    Pakrashi, Sunandan; Dalai, Swayamprava; Chandrasekaran, Natarajan; Mukherjee, Amitava

    2014-07-01

    The transfer of nanoparticles through the food chain can lead to bioaccumulation and biomagnification resulting in a long term negative impact on the ecosystem functions. The primary objective of this study was evaluation of aluminium oxide nanoparticles transfer from primary producers to primary consumers. A simple set up consisting of a primary producer (Chlorella ellipsoides) and a primary consumer (Ceriodaphnia dubia) was used. Here, C. ellipsoides were exposed to the varying concentrations of the nanoparticles ranging from 20 to 120μg/mL (196 to 1176μM) for 48h and the infested algal cells were used as the feed to C. dubia. The bioaccumulation of the nanoparticles into the daphnids was noted and the biomagnification factors were computed. The exposure was noted to cause subtle alterations in the feeding behaviour of the daphnids. This might have long term consequences in the energy flow through the food chain. The reproductive behaviour of the daphnids remained unaffected upon exposure to nanoparticle infested algal feed. Distinct observations at ultra-structural scale using transmission electron microscopy provided visual evidences for the disrupted feeding behaviour upon exposure to nanoparticle treated algae. Internalization of nanoparticle like inclusion bodies in the intracellular space of algae was also detected. The findings were further substantiated by a detailed analysis of hydrodynamic stability, bioavailability and dissolution of ions from the nanoparticles over the exposure period. Altogether, the study brings out the first of its kind of observation of trophic transfer potential/behaviour of aluminium oxide nanoparticles and its probable impacts on the energy flow in the fresh water aquatic ecosystem. Copyright © 2014 Elsevier B.V. All rights reserved.

  3. Trophic transfer potential of aluminium oxide nanoparticles using representative primary producer (Chlorella ellipsoides) and a primary consumer (Ceriodaphnia dubia)

    Energy Technology Data Exchange (ETDEWEB)

    Pakrashi, Sunandan; Dalai, Swayamprava; Chandrasekaran, Natarajan; Mukherjee, Amitava, E-mail: amit.mookerjea@gmail.com

    2014-07-01

    Highlights: • Trophic transfer of alumina nanoparticles using Chlorella ellipsoides and Ceriodaphnia dubia. • Subtle alterations in the feeding behaviour of the daphnids. • Disruption the energy flow through the food chain. • Transmission electron microscopy validated the disrupted feeding behaviour. - Abstract: The transfer of nanoparticles through the food chain can lead to bioaccumulation and biomagnification resulting in a long term negative impact on the ecosystem functions. The primary objective of this study was evaluation of aluminium oxide nanoparticles transfer from primary producers to primary consumers. A simple set up consisting of a primary producer (Chlorella ellipsoides) and a primary consumer (Ceriodaphnia dubia) was used. Here, C. ellipsoides were exposed to the varying concentrations of the nanoparticles ranging from 20 to 120 μg/mL (196 to 1176 μM) for 48 h and the infested algal cells were used as the feed to C. dubia. The bioaccumulation of the nanoparticles into the daphnids was noted and the biomagnification factors were computed. The exposure was noted to cause subtle alterations in the feeding behaviour of the daphnids. This might have long term consequences in the energy flow through the food chain. The reproductive behaviour of the daphnids remained unaffected upon exposure to nanoparticle infested algal feed. Distinct observations at ultra-structural scale using transmission electron microscopy provided visual evidences for the disrupted feeding behaviour upon exposure to nanoparticle treated algae. Internalization of nanoparticle like inclusion bodies in the intracellular space of algae was also detected. The findings were further substantiated by a detailed analysis of hydrodynamic stability, bioavailability and dissolution of ions from the nanoparticles over the exposure period. Altogether, the study brings out the first of its kind of observation of trophic transfer potential/behaviour of aluminium oxide nanoparticles and

  4. Trophic transfer potential of aluminium oxide nanoparticles using representative primary producer (Chlorella ellipsoides) and a primary consumer (Ceriodaphnia dubia)

    International Nuclear Information System (INIS)

    Pakrashi, Sunandan; Dalai, Swayamprava; Chandrasekaran, Natarajan; Mukherjee, Amitava

    2014-01-01

    Highlights: • Trophic transfer of alumina nanoparticles using Chlorella ellipsoides and Ceriodaphnia dubia. • Subtle alterations in the feeding behaviour of the daphnids. • Disruption the energy flow through the food chain. • Transmission electron microscopy validated the disrupted feeding behaviour. - Abstract: The transfer of nanoparticles through the food chain can lead to bioaccumulation and biomagnification resulting in a long term negative impact on the ecosystem functions. The primary objective of this study was evaluation of aluminium oxide nanoparticles transfer from primary producers to primary consumers. A simple set up consisting of a primary producer (Chlorella ellipsoides) and a primary consumer (Ceriodaphnia dubia) was used. Here, C. ellipsoides were exposed to the varying concentrations of the nanoparticles ranging from 20 to 120 μg/mL (196 to 1176 μM) for 48 h and the infested algal cells were used as the feed to C. dubia. The bioaccumulation of the nanoparticles into the daphnids was noted and the biomagnification factors were computed. The exposure was noted to cause subtle alterations in the feeding behaviour of the daphnids. This might have long term consequences in the energy flow through the food chain. The reproductive behaviour of the daphnids remained unaffected upon exposure to nanoparticle infested algal feed. Distinct observations at ultra-structural scale using transmission electron microscopy provided visual evidences for the disrupted feeding behaviour upon exposure to nanoparticle treated algae. Internalization of nanoparticle like inclusion bodies in the intracellular space of algae was also detected. The findings were further substantiated by a detailed analysis of hydrodynamic stability, bioavailability and dissolution of ions from the nanoparticles over the exposure period. Altogether, the study brings out the first of its kind of observation of trophic transfer potential/behaviour of aluminium oxide nanoparticles and

  5. Active Oxygen Generator by Silent Discharge and Oxidation Power in Formation of Oxide Thin Films

    Science.gov (United States)

    Tanaka, Masaaki; Kawagoe, Yasuyuki; Tsukazaki, Hisashi; Yamanishi, Kenichiro

    We have studied the low pressure silent discharge type active oxygen generator in terms of the application to the formation of oxide thin films. In this paper the oxidation power of active oxygen in the oxide thin film formation is compared with that of oxygen and ozone by forming silicon oxide thin films. It was confirmed that the oxidation power is in turn of active oxygen > ozone > oxygen from the experimental result of the number of x in SiOx thin film. Furthermore we applied active oxygen to the formation of the thin film high temperature super conductor and active oxygen was found to be effective to the formation of the thin film with high performance.

  6. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  7. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  8. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  9. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  10. Chitosan–silver oxide nanocomposite film: Preparation and ...

    Indian Academy of Sciences (India)

    The antibacterial activity of the composite film against pathogenic bacteria viz. Escherichia coli, Staphylococcus aureus, Bacillus subtilis and Pseudomonas aeruginosa was measured by agar diffusion method. Our observations suggest that chitosan as biomaterial based nanocomposite film containing silver oxide has an ...

  11. Oxide ferroelectric thin films: synthesis from organometallic compounds and properties

    International Nuclear Information System (INIS)

    Vertoprakhov, Vladimir N; Nikulina, Lyubov' D; Igumenov, Igor K

    2005-01-01

    Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10-15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.

  12. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Unknown

    Most of the materials so far grown into films by PLD are perovskite-related oxides. Therefore to grow these oxide films, lattice-matched single crystal substrates are necessary. Commonly used substrates are SrTiO3, LaAlO3, MgO, ZrO2 and sapphire which can be cut in [100], [110] or [111] direction. As thermal expansion.

  13. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Abstract. For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8⋅5 mbar for 18 h. Argon and ...

  14. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  15. Chitosan/graphene oxide biocomposite film from pencil rod

    Science.gov (United States)

    Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

    2018-03-01

    Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

  16. Plasma oxidation as a tool to design oxide films at low temperatures

    International Nuclear Information System (INIS)

    Schennach, R.; Grady, T.; Naugle, D.G.; Parga, J.R.; McWhinney, H.; Cocke, D.L.

    2001-01-01

    Interfacial oxidation, an established approach to produce surface thin films for catalysts, corrosion, ware protective coatings and electronic structures is currently performed by thermal, anodic, and plasma methods. Fundamental physical-chemical models that can allow film design, particularly on alloys are lacking and plasma oxidation is the least studied of these methods. In this work, plasma oxidation of three CuZr alloys (CuZr 2 , CuZr, and Cu 51 Zr 14 ) has been studied using x-ray photoelectron spectroscopy and depth profiling methods. The dependence of the resulting oxide film on alloy composition and sample temperature during plasma oxidation is investigated. In contrast to thermal and electrochemical oxidation which lead to the formation of a zirconium oxide film, plasma oxidation leads to the formation of a copper oxide or metallic copper overlayer depending on temperature and copper concentration in the bulk. It is shown that plasma oxidation can be used to design oxide films at room temperature, which require high temperatures using thermal oxidation and are not achievable by anodic oxidation

  17. Manipulation of stored charge in anodic aluminium oxide/SiO2 dielectric stacks by the use of pulsed anodisation

    International Nuclear Information System (INIS)

    Lu, Zhong; Ouyang, Zi; Grant, Nicholas; Wan, Yimao; Yan, Di; Lennon, Alison

    2016-01-01

    Graphical abstract: - Highlights: • Pulse anodisation was used to grow AAO layers with controllable stored charge. • Stored charge density ranging from −5.2 × 10 11 to 2.5 × 10 12 q/cm 2 was demonstrated. • Enhancement in surface passivation was demonstrated with charge management. • Annealing significantly reduces the positive stored charge and the interface defect. - Abstract: A method of fabricating anodic aluminium oxide (AAO) with the capability of manipulating its stored charge is reported. This method involves the use of a pulsed current source to anodise aluminium layers instead of the typically used constant current/voltage source, with the test structures experiencing positive and negative cycles periodically. By tuning the positive cycle percentage, it is demonstrated that the effective stored charge density can be manipulated in a range from −5.2 × 10 11 to 2.5 × 10 12 q/cm 2 when the AAO is formed over a 12 nm SiO 2 layer. An investigation of the stored charge distribution in the dielectric stacks indicates a positive fixed charge at the SiO 2 /Si interface, a negative fixed charge at the AAO/SiO 2 interface and a positive bulk charge within the AAO layer. The effective stored charge density and interface states were found to be affected by annealing conditions and it is suggested that oxygen annealing can reduce the bulk positive charge while post-metallisation anneal is most effective in reducing silicon interface defects. Charge manipulation using pulsed anodisation is shown to reduce carrier recombination on boron-diffused silicon surfaces highlighting the potential of the process to be used to tune the electrical properties of dielectric layers so that they can reduce surface recombination on silicon surfaces having different dopant polarity and concentrations.

  18. Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

    International Nuclear Information System (INIS)

    Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

    2014-01-01

    This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

  19. Excitation of anodized alumina films with a light source

    DEFF Research Database (Denmark)

    Aggerbeck, Martin; Canulescu, Stela; Rechendorff, K.

    Optical properties of anodized aluminium alloys were determined by optical diffuse reflectance spectroscopy of such films. Samples with different concentrations of dopants were excited with a white-light source combined with an integrating sphere for fast determination of diffuse reflectance....... The UV-VIS reflectance of Ti-doped anodized aluminium films was measured over the wavelength range of 200 nm to 900 nm. Titanium doped-anodized aluminium films with 5-15 wt% Ti were characterized. Changes in the diffuse light scattering of doped anodized aluminium films, and thus optical appearance......, with doping are discussed. Using the Kubelka-Munk model on the diffuse reflectance spectra of such films, the bandgap Eg of the oxide alloys can be determined....

  20. Self-assembled 1-octadecyl-1H-benzimidazole film on copper ...

    Indian Academy of Sciences (India)

    tion is to replace the traditional aluminium and alu- minium alloy interconnects with copper metal, which offers lower electrical resistance.2 However, in contrast to aluminium, copper does not form self-passivating oxide film and readily undergoes .... 300ppm chloride environment. Figure 2(a). Figure 2. (a) Nyquist and (b) ...

  1. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  2. Facile synthesis of aluminium doped zinc oxide-polyaniline hybrids for photoluminescence and enhanced visible-light assisted photo-degradation of organic contaminants

    Science.gov (United States)

    Mitra, Mousumi; Ghosh, Amrita; Mondal, Anup; Kargupta, Kajari; Ganguly, Saibal; Banerjee, Dipali

    2017-04-01

    The emergence of organic-inorganic photoactive materials has led to marked progress in the field of heterogeneous visible-light photocatalysis. Visible-light active aluminium doped zinc oxide-polyaniline (PAZ) hybrid was prepared employing in-situ oxidative polymerization of polyaniline (PANI) in the presence of aluminium doped zinc oxide (AlZnO) nanorods, synthesized via sol-gel route. The compositions, structural and optical properties of the synthesized hybrids were characterized. Among various samples, the 22 wt% aluminium doped zinc oxide-polyaniline (PAZ 3) hybrid show the best photocatalytic action for the degradation of methyl orange (MO) and rose bengal (RB) dyes under visible-light illumination, even after repeated use. The performance of the photocatalytic process was determined by the first order rate constant, 1.77 × 10-2 min-1 and 2.61 × 10-2 min-1 for MO and RB dyes, respectively. Scavenger test was used to determine the role of active species and accordingly a mechanism was proposed. Electrochemical impedance spectroscopy and linear scan voltammetry under dark and visible-light irradiation also established the visible-light activity of the PAZ hybrid due to decrease in the electron transfer resistance that resulted in an enhancement in photocurrent. The significant enhancement of photo degradation may be attributed to the efficiency of charge separation, induced by synergistic effect between an organic conductor PANI and an inorganic semiconductor AlZnO. Owing to its superior photo electrochemical performance and photocatalytic degradation, aluminium doped zinc oxide-polyaniline (PAZ) hybrid offers stable and efficient organic-inorganic hybrid hetero-structures in near future.

  3. Doped nanostructured zinc oxide films grown by electrodeposition.

    Science.gov (United States)

    Donderis, V; Orozco, J; Cembrero, J; Curiel-Esparza, J; Damonte, L C; Hernández-Fenollosa, M A

    2010-02-01

    ZnO thin films doped with either In or Al are n-type oxide materials of interest for application in electronic devices and thin-film solar cells. In this work, the doped ZnO films were electrodeposited at 80 degrees C from an aqueous solution on polycrystalline conductive Indium Tin Oxide covered glass substrates. The incorporation of the dopants into the ZnO film has been verified by energy dispersive X-ray spectrum, X-Ray diffraction and optical transmission analysis. The optical and surface structure properties of the ZnO doped films are strongly affected by the In and Al concentrations in the electrodeposition solution as evidenced by optical transmission and reflection measurements, and scanning electron microscopy.

  4. Natural Oxidation of Ultra-Thin Copper Films

    Science.gov (United States)

    Semenov, V. A.; Oskirko, V. O.; Rabotkin, S. V.; Oskomov, K. V.; Solovyev, A. A.; Stepanov, S. A.

    2018-01-01

    The paper examines the oxidation of polycrystalline Cu films under the impact of ambient atmosphere in the course of extended time (from 20 to 90 days). It shows that in the case of 10 nm thick Cu films deposited onto the glass substrate by method of magnetron sputtering, one eventually observes the increase in transparency, surface resistance and surface roughness, as well as the decrease in reflection in the area of near infrared region. The most dramatic changes occur in films deposited in the pulse mode of sputtering with frequency of 3 kHz compared to films deposited in the direct current mode. Formation of sublayer ZnO:Al and 20 nm thick upper passivating layer ZnO:Al allows effectively preventing the oxidation of thin copper films under the impact of ambient atmosphere.

  5. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p...

  6. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...

  7. Improved zinc oxide film for gas sensor applications

    Indian Academy of Sciences (India)

    Unknown

    Improved zinc oxide film for gas sensor applications. S ROY and S BASU*. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. Zinc oxide (ZnO) is a versatile material for different commercial applications such as transparent electrodes, piezoelectric devices, varistors, SAW devices ...

  8. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  9. Oxide-based thin film transistors for flexible electronics

    Science.gov (United States)

    He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

    2018-01-01

    The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

  10. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  11. Electrochemical Formation of Cerium Oxide/Layered Silicate Nanocomposite Films

    Directory of Open Access Journals (Sweden)

    Adele Qi Wang

    2016-01-01

    Full Text Available Cerium oxide/montmorillonite nanocomposite films were synthesized electrochemically from solutions containing 0.5 to 50% Na-montmorillonite. The nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, and Raman spectroscopy. Nanocomposite films synthesized from montmorillonite concentrations lower than 10% were continuous, uniform, and dense. X-ray diffraction confirmed that the nanocomposite films retain the face-centered cubic structure of cerium oxide while incorporating exfoliated platelets of the montmorillonite into the matrix. In addition, calculations from XRD data showed particle sizes ranging from 4.50 to 6.50 nm for the nanocomposite coatings. Raman and FTIR spectroscopy had peaks present for cerium oxide and the layered silicates in the coatings. Cross-sectional scanning electron microscopy and energy-dispersive X-ray spectroscopy confirmed the presence of montmorillonite throughout the cerium oxide matrix.

  12. Fundamental studies of growth mechanisms in physical vapour deposition of aluminium

    CERN Document Server

    Knorr, N J

    2000-01-01

    temperature could be independently controlled due to the low deposition rate of the aluminium. The depositions were performed in a UHV environment to ensure that film growth was not mediated by contamination. The ion energy range used was 10-75eV and the substrate temperature varied from -100 deg C to 200 deg C. The depositions were onto silicon (100) with a native oxide surface, except for a set of depositions which were performed on to silicon with the native oxide surface removed. The cleanliness of the depositions was verified using in-situ XPS analysis and after deposition the structure of the aluminium films was inferred from measurements using SEM, TEM, AFM XRD and Nano-indendation. This information allowed the mechanisms of growth of the aluminium films to be investigated. In addition to the extensive array of IBDR depositions a series of aluminium films were deposited using evaporation and sputtering. These films were grown at substrate temperatures between room temperate and 200 deg C. The use of ev...

  13. Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

    Science.gov (United States)

    Nayak, Manish Kumar; Esther, A. Carmel Mary; Bera, Parthasarathi; Dey, Arjun

    2017-09-01

    A single layer antireflective, smart, crystalline and nanocolumnar pulsed RF magnetron sputtered vanadium oxide-molybdenum oxide thin film on silicon is proposed for the alternate antireflective material for silicon based futuristic solar cell application. The VO-MO film with 130 nm thickness grown at 200 W shows significant low reflectance (1% within the 500-600 nm region). The VO-MO film with lowest reflectance shows a phase transition at around 55 °C which is beneficial due to film inherent variable IR emittance behaviour which may be helpful for eliminating excess heat load generated during in-service of silicon solar cell.

  14. WO3 Nanoplates Film: Formation and Photocatalytic Oxidation Studies

    Directory of Open Access Journals (Sweden)

    Chin Wei Lai

    2015-01-01

    Full Text Available High surface area of tungsten oxide (WO3 nanoplates films was prepared via simple electrochemical anodization technique by controlling the fluoride content (NH4F in electrolyte. The design and development of WO3-based nanostructure assemblies have gained significant interest in order to maximize specific surface area for harvesting more photons to trigger photocatalytic oxidation reaction. This study aims to determine the optimum content of NH4F in forming WO3 nanoplates on W film with efficient photocatalytic oxidation reaction for organic dye degradation by utilizing our solar energy. The NH4F was found to influence the chemical dissolution and field-assisted dissolution rates, thus modifying the final morphological of WO3-based nanostructure assemblies film. It was found that 0.7 wt% of NH4F is the minimum amount to grow WO3 nanoplates film on W film. The photocatalysis oxidation experimental results showed that WO3 nanoplates film exhibited a maximum degradation of methyl orange dye (≈75% under solar illumination for 5 hours. This behavior was attributed to the better charge carriers transportation and minimizes the recombination losses with specific surface area of nanoplates structure.

  15. Study of zinc oxide thin film characteristics

    OpenAIRE

    Johari Shazlina; Muhammad Nazalea Yazmin; Zakaria Mohd Rosydi

    2017-01-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influe...

  16. Properties of Edible Films Based on Oxidized Starch and Zein

    Directory of Open Access Journals (Sweden)

    Elizabeth Argüello-García

    2014-01-01

    Full Text Available The objective of this work was to investigate the effect of zein and film formulation on mechanical and structural properties of native (FNS, and oxidized with 2.5% (FOSA and 3.5% (FOSB banana starch. The oxidized starch showed differences from native starch due to the oxidation process, showing a decrease in lipids, proteins, and amylose. The increase of the sodium hypochlorite increased the content of carbonyl and carboxyl groups in the ranges 0.015–0.028% and 0.022–0.031%, respectively. The film obtained from FOSB displayed the highest tensile strength (5.05 MPa and satisfactory elongation value (27.1%. The zein addition caused a decrease in these mechanical properties, as well as a significant decrease in water vapour permeability (WVP. However, films from FOSA and FOSB showed higher permeability than that of the native starch. The addition of glycerol and the level of oxidation increased the films moisture. Micrographs showed that, during the oxidation process, impurities were largely eliminated from the starch granule, noting more homogeneous structures both in granules and films.

  17. Computational prediction of the refinement of oxide agglomerates in a physical conditioning process for molten aluminium alloy

    International Nuclear Information System (INIS)

    Tong, M; Jagarlapudi, S C; Browne, D J; Patel, J B; Stone, I C; Fan, Z

    2015-01-01

    Physically conditioning molten scrap aluminium alloys using high shear processing (HSP) was recently found to be a promising technology for purification of contaminated alloys. HSP refines the solid oxide agglomerates in molten alloys, so that they can act as sites for the nucleation of Fe-rich intermetallic phases which can subsequently be removed by the downstream de-drossing process. In this paper, a computational modelling for predicting the evolution of size of oxide clusters during HSP is presented. We used CFD to predict the macroscopic flow features of the melt, and the resultant field predictions of temperature and melt shear rate were transferred to a population balance model (PBM) as its key inputs. The PBM is a macroscopic model that formulates the microscopic agglomeration and breakage of a population of a dispersed phase. Although it has been widely used to study conventional deoxidation of liquid metal, this is the first time that PBM has been used to simulate the melt conditioning process within a rotor/stator HSP device. We employed a method which discretizes the continuous profile of size of the dispersed phase into a collection of discrete bins of size, to solve the governing population balance equation for the size of agglomerates. A finite volume method was used to solve the continuity equation, the energy equation and the momentum equation. The overall computation was implemented mainly using the FLUENT module of ANSYS. The simulations showed that there is a relatively high melt shear rate between the stator and sweeping tips of the rotor blades. This high shear rate leads directly to significant fragmentation of the initially large oxide aggregates. Because the process of agglomeration is significantly slower than the breakage processes at the beginning of HSP, the mean size of oxide clusters decreases very rapidly. As the process of agglomeration gradually balances the process of breakage, the mean size of oxide clusters converges to a

  18. Aluminium bridges, aluminium bridge decks

    NARCIS (Netherlands)

    Soetens, F.; Straalen, IJ.J. van

    2003-01-01

    Applications of aluminium have grown considerably in building and civil engineering the last decade. In building and civil engineering the increase of aluminium applications is due to various aspects like light weight, durability and maintenance, use of extrusions, and esthetics. The paper starts

  19. Influence of lead-related centers on luminescence of Ce.sup.3+./sup. and Pr.sup.3+./sup. centers in single crystalline films of aluminium perovskites and garnets

    Czech Academy of Sciences Publication Activity Database

    Babin, V.; Gorbenko, V.; Krasnikov, A.; Makhov, A.; Nikl, Martin; Zazubovich, S.; Zorenko, Y.

    2010-01-01

    Roč. 45, 3-6 (2010), 415-418 ISSN 1350-4487 R&D Projects: GA ČR GA202/08/0893 Institutional research plan: CEZ:AV0Z10100521 Keywords : aluminium perovskites and garnets * single crystalline films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.019, year: 2010

  20. Enhanced water vapour flow in silica microchannels and interdiffusive water vapour flow through anodic aluminium oxide (AAO) membranes

    Science.gov (United States)

    Lei, Wenwen; McKenzie, David R.

    2015-12-01

    Enhanced liquid water flows through carbon nanotubes reinvigorated the study of moisture permeation through membranes and micro- and nano-channels. The study of water vapour through micro-and nano-channels has been neglected even though water vapour is as important as liquid water for industry, especially for encapsulation of electronic devices. Here we measure moisture flow rates in silica microchannels and interdiffusive water vapour flows in anodic aluminium oxide (AAO) membrane channels for the first time. We construct theory for the flow rates of the dominant modes of water transport through four previously defined standard configurations and benchmark it against our new measurements. The findings show that measurements of leak behaviour made using other molecules, such as helium, are not reliable. Single phase water vapour flow is overestimated by a helium measurement, while Washburn or capillary flow is underestimated or for all channels when boundary slip applies, to an extent that depends on the slip length for the liquid phase flows.

  1. Fracture resistance of aluminium oxide and lithium disilicate-based crowns using different luting cements: an in vitro study.

    Science.gov (United States)

    Al-Wahadni, Ahed M; Hussey, David L; Grey, Nicholas; Hatamleh, Muhanad M

    2009-03-01

    The aim of this study was to investigate the fracture resistance of two types of ceramic crowns cemented with two different cements. Forty premolar crowns were fabricated using lithium-disilicate (IPS Empress-2) and glass-infiltrated aluminium-oxide (In-Ceram) ceramic systems. The crowns were divided into four groups (n=10) with Group 1 (IPS Empress-2) and Group 2 (In-Ceram) cemented with glass ionomer cement. Group 3 (IPS Empress-2) and Group 4 (In-Ceram) were cemented with resin cement. Crowns were tested in a universal testing machine at a compressive-load speed of 10 mm/min. Fracture modes were grouped into five categories. One way analysis of variance (ANOVA) and Bonferroni post-hoc tests were used to detect statistical significances (pcement type had no statistical significant effect (p>0.05) on fracture resistance within each ceramic system tested. In-Ceram crowns cemented with either glass ionomer or resin cements exhibited a statistically significantly higher fracture-resistance than IPS Empress-2 crowns (pcrowns was the common mode exhibited. Fracture resistance of IPS Empress-2 and In-Ceram crowns was not affected by the type of cement used for luting. Both In-Ceram and IPS Empress-2 crowns can be successfully luted with the cements tested with In-Ceram exhibiting higher fracture resistance than IPS Empress-2.

  2. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  3. Graphene Oxide Reinforced Polycarbonate Nanocomposite Films with Antibacterial Properties

    Directory of Open Access Journals (Sweden)

    R. Mahendran

    2016-01-01

    Full Text Available The incorporation of carbonaceous nanofillers into polymers can result in significant materials with improved physicochemical properties and novel composite functionalities. In this study, we have fabricated antibacterial, lightweight, transparent, and flexible graphene oxide (GO reinforced polycarbonate thin films by a facile and low-cost methodology. Solution blending is employed to get a homogeneous mixture of PC-GO composites at various loading of GO, and the thin films are prepared by dry-wet phase inversion technique. Thermal studies and micrographs of the films revealed the incorporation of GO in PC matrix. Microstructure of the thin films showed the homogeneous dispersion of GO at micro- and nanoscales; however, at higher loading of GO (0.7%, significant agglomeration is observed. More importantly, PC-GO composite films exhibited excellent antibacterial activities against E. coli and S. aureus, owing to the antibacterial nature of GO nanoparticles.

  4. Study of zinc oxide thin film characteristics

    Directory of Open Access Journals (Sweden)

    Johari Shazlina

    2017-01-01

    Full Text Available This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  5. The growth of thin film epitaxial oxide-metal heterostructures

    CERN Document Server

    Wang, C

    1998-01-01

    films with lowest IR emissivity are those made from the purest targets despite their having comparable roughnesses to films from lower purity targets. The lowest emissivity achieved was in the range of 1.64% to 1.72% measured at 3.8 mu m for 1.5 to 1.8 mu m thick films. Modifications to standard idealized Drude theory have been made which, in a phenomenological way, take account of imperfections in the sputtered Al film, oxidation state and roughness. in electric properties of the Nb film and the reduction in crystalline quality of the MgO layer. The reduction of transition temperature to the superconducting state, Tc, and the similarly systematic increase in the Nb lattice parameter were observed consistent with oxygen content data reported in the literature, as the Nb became heavily oxidized. Examination of the surface of clean and oxidized Nb by atomic force microscopy, and deposition of MgO in UHV onto a previously oxidized Nb surface, suggested that the decrease in crystalline quality of the MgO can be a...

  6. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  7. Superlubricating graphene and graphene oxide films

    Science.gov (United States)

    Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

    2018-02-13

    A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

  8. Comparison of topotactic fluorination methods for complex oxide films

    Science.gov (United States)

    Moon, E. J.; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; Barbash, D.; May, S. J.

    2015-06-01

    We have investigated the synthesis of SrFeO3-αFγ (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  9. Comparison of topotactic fluorination methods for complex oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Moon, E. J., E-mail: em582@drexel.edu; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J., E-mail: smay@coe.drexel.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Barbash, D. [Centralized Research Facilities, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  10. Comparison of topotactic fluorination methods for complex oxide films

    Directory of Open Access Journals (Sweden)

    E. J. Moon

    2015-06-01

    Full Text Available We have investigated the synthesis of SrFeO3−αFγ (α and γ ≤ 1 perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  11. Transformation of intermetallic layer due to oxidation heat treatment on hot-dipped aluminium coated steel

    International Nuclear Information System (INIS)

    Hishamuddin Husain; Abdul Razak Daud; Muhamad Daud; Nadira Kamarudin

    2013-01-01

    Heat treatment was introduced onto the aluminum coated low carbon steel to promote the formation of thin layer of oxide for enhancement of oxidation protection of steel. This process has transformed the existing intermetallic layer formed during hot dip aluminising process. Experiment was conducted on the low carbon steel substrates with 10 mm x 10 mm x 2 mm dimension. Hot dip aluminising of low carbon steel was carried out at 750 degree Celsius dipping temperature in a molten pure aluminum for 5 minutes. Aluminized samples were heat treated at 600, 700, 800, and 900 degree Celsius for 1 hour. X-ray Diffraction (XRD), Scanning Electron Microscope (SEM) and EDAX were used in investigation. From the observation, it showed the intermetallic thickness increased with the increase in temperature. The result of EDAX analysis revealed the existence of oxide phase and the intermetallics. The XRD identified the intermetallics as Fe 2 Al 5 and FeAl 3 . (Author)

  12. Reduction of Graphene Oxide Thin Films by Cobaltocene and Decamethylcobaltocene.

    Science.gov (United States)

    MacInnes, Molly M; Hlynchuk, Sofiya; Acharya, Saurabh; Lehnert, Nicolai; Maldonado, Stephen

    2018-01-17

    Reduced graphene oxide (RGO) films have been prepared by immersion of graphene oxide (GO) films at room temperature in nonaqueous solutions containing simple, outer-sphere metallocene reductants. Specifically, solutions of cobaltocene, cobaltocene and trifluoroacetic acid (TFA), and decamethylcobaltocene each showed activity for the rapid reduction of GO films cast on a wide variety of substrates. Each reactant increased the conductivity of the films by several orders of magnitude, with RGO films prepared with either decamethylcobaltocene or cobaltocene and TFA possessing the highest conductivities (∼10 4 S m -1 ). X-ray photoelectron spectroscopy suggested that while all three reagents lowered the content of carbon-oxygen functionalities, solutions of cobaltocene and TFA were the most effective at reducing the material to sp 2 carbon. Separately, Raman spectra and atomic force micrographs indicated that RGO films prepared with decamethylcobaltocene consisted of the largest graphitic domains and lowest macroscopic roughness. Cumulatively, the data suggest that the outer-sphere reductants can affect the conversion to RGO but the reactivity and mechanism depend on the standard potential of the reductant and the availability of protons. This work both demonstrates a new way to prepare high-quality RGO films on a wide range of substrate materials without annealing and motivates future work to elucidate the chemistry of RGO synthesis through the tunability of outer-sphere reductants such as metallocenes.

  13. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  14. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    Science.gov (United States)

    Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  15. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  16. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  17. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  18. The iron and cerium oxide influence on the electric conductivity and the corrosion resistance of anodized aluminium

    International Nuclear Information System (INIS)

    Souza, Kellie Provazi de

    2006-01-01

    The influence of different treatments on the aluminum system covered with aluminum oxide is investigated. The aluminum anodization in sulphuric media and in mixed sulphuric and phosphoric media was used to alter the corrosion resistance, thickness, coverage degree and microhardness of the anodic oxide. Iron electrodeposition inside the anodic oxide was used to change its electric conductivity and corrosion resistance. Direct and pulsed current were used for iron electrodeposition and the Fe(SO 4 ) 2 (NH 4 ) 2 .6H 2 O electrolyte composition was changed with the addition of boric and ascorbic acids. To the sealing treatment the CeCl 3 composition was varied. The energy dispersive x-ray (EDS), the x-ray fluorescence spectroscopy (FRX) and the morphologic analysis by scanning electronic microscopy (SEM) allowed to verify that, the pulsed current increase the iron content inside the anodic layer and that the use of the additives inhibits the iron oxidation. The chronopotentiometric curves obtained during iron electrodeposition indicated that the boric and ascorbic acids mixture increased the electrodeposition process efficiency. The electrochemical impedance spectroscopy (EIE), the Vickers (Hv) microhardness measurements and morphologic analysis evidenced that the sealing treatment improves the corrosion resistance of the anodic film modified with iron. The electrical impedance (EI) technique allowed to prove the electric conductivity increase of the anodized aluminum with iron electrodeposited even after the cerium low concentration treatment. Iron nanowires were prepared by using the anodic oxide pores as template. (author)

  19. Effect of electrolyte temperature on the thickness of anodic aluminium oxide (AAO layer

    Directory of Open Access Journals (Sweden)

    P. Michal

    2016-07-01

    Full Text Available Effect of electrolyte temperature on the thickness of resulting oxide layer has been studied. Unlike previous published studies this article was aimed to monitor the relationship between electrolyte temperature and resulting AAO layer thickness in interaction with other input factors affecting during anodizing process under special process condition, i.e. lower concentration of sulphuric acid, oxalic acid, boric acid and sodium chloride. According to Design of Experiments (DOE 80 individual test runs of experiment were carried out. Using statistical analysis and artificial intelligence for evaluation, the computational model predicting the thickness of oxide layer in the range from 5 / μm to 15 / μm with tolerance ± 0,5 / μm was developed.

  20. Quercetin and omega 3 ameliorate oxidative stress induced by aluminium chloride in the brain.

    Science.gov (United States)

    Ali, Haytham Abdallah; Afifi, Mohamed; Abdelazim, Aaser Mohamed; Mosleh, Yahia Youssef

    2014-08-01

    Exposure to high levels of aluminum (Al) leads to neurodegeneration, which may be mediated through over-generation of free radicals. So, in the present study, we investigated the ability of both quercetin and omega 3 to ameliorate adverse effects of Al on brain antioxidants by monitoring the main brain antioxidant enzymes on molecular and cellular levels. The obtained results indicated that Al induced oxidative stress through induction of free radical production and inhibition of activity and expression of the antioxidant enzymes catalase (CAT), glutathione reductase (GR), and glutathione peroxidase (GPx); and at the same time induced superoxide dismutase (SOD) activity and gene expression. Both quercetin (QE) and omega 3 have the ability to overcome Al-induced oxidative stress, manifested by the significant reduction in free radical concentration and induction of the activity and gene expression of the brain antioxidant enzymes.

  1. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  2. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

    Science.gov (United States)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

    2016-11-17

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  3. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  4. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    2016-10-07

    Oct 7, 2016 ... spectra at nearly normal incident light. The estimated direct optical band gap energy (Ed g) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm2O3 thin films were found to obey the single oscillator model. Keywords. Transparent oxide ...

  5. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  6. Surface Chemistry of Nano-Structured Mixed Metal Oxide Films

    Science.gov (United States)

    2012-12-11

    dehydration . Steady-state reactive molecular beam scattering (RMBS) shows that dehydration is the dominant reaction pathway on clean Mo(1 1 0), while C–Mo(1 1...photoelectrochemical water oxidation performance under simulated solar irradiation of hematite (α-Fe2O3) films synthesized by coevaporation of pure Si and Fe

  7. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  8. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  9. Characterization of molybdenum-doped indium oxide thin films by ...

    Indian Academy of Sciences (India)

    Abstract. In this research, indium oxide nanostructure undoped and doped with Mo were prepared on glass substrates using spray pyrolysis technique. Various parameters such as dopant concentration and deposition tem- peratures were studied. Structural properties of these films were investigated by X-ray diffraction and ...

  10. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    was investigated for some reducing gases such as acetone, methane and liquefied petroleum gas and it was observed that the films studied were selective to acetone. Keywords. Zinc oxide; structural analysis; optical parameters; electrical conductivity; gas sensitivity. 1. Introduction. In recent years, transparent conducting ...

  11. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different pre- paration conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of un-.

  12. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different preparation conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of undoped evaporated ...

  13. Characterization of molybdenum-doped indium oxide thin films by ...

    Indian Academy of Sciences (India)

    In this research, indium oxide nanostructure undoped and doped with Mo were prepared on glass substrates using spray pyrolysis technique. Various parameters such as dopant concentration and deposition temperatures were studied. Structural properties of these films were investigated by X-ray diffraction and scanning ...

  14. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  15. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  16. Storage and characterization of the hydrogen in mixed oxides on base of cerium-nickel and zirconium or the aluminium

    International Nuclear Information System (INIS)

    Debeusscher, S.

    2008-12-01

    The mixed oxides based on cerium-nickel and zirconium or aluminium are able to store large quantities of hydrogen, To determine nature, reactivity and properties of hydrogen species (spill-over, direct desorption), the solid were studied by different physicochemical techniques in the dried, calcined and partially reduced states: XRD, porosity, TGA, TPR, TPA, TPD, chemical titration and inelastic neutron scattering (INS). Solids are mainly meso-porous with a common pore size at 4 nm, They are constituted of CeO 2 phase, Ce-Ni or Ce-Ni-Zr solid solution and of Ni(OH) 2 in the dried state and NiO in the calcined state. The Ni species are in various environments and the strong interactions between the cations in solid solution and at different particles interface influence their reducibility and the creation of anionic vacancies. Activation in H 2 in temperature is determining for hydrogen storage in the solid while calcination step is not necessary. INS Analyses evidence that the hydrogen species inserted during treatment in H 2 are H + (OH - ), hydride H - and H * (metallic nickel) species, present in various chemical environments, in particular for hydride species. All kinds of hydrogen species participate to the reaction during the chemical titration in agreement with the proposed hydrogenation mechanism. The study of the adsorption of hydrogen shows that this step is fast and in quantity of the same order as that measured by chemical titration. The direct desorption of H 2 is very low, linked to the presence of hydrogen in interaction with metallic nickel (H *- .). Desorption of water is also observed, in parallel, corresponding to the elimination of groups. The hydride species are not desorbed. These various observations allow connecting hydrogen species properties with their localization in the structure and to model active sites. (author)

  17. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  18. Organic thin film transistors with indium tin oxide bottom electrode

    International Nuclear Information System (INIS)

    Han, Chang-Wook; Shin, Hee-Sun; Park, Joong-Hyun; Han, Min-Koo; Pang, Hee-Suk; Kim, Ki-Yong; Chung, In-Jae; Pyo, Sang-Woo; Lee, Dong-Hyun; Kim, Young-Kwan

    2006-01-01

    Organic thin film transistors (OTFTs) which employ indium tin oxide (ITO) as source and drain electrodes instead of gold are fabricated. A double gate dielectric layer was used, which consists of benzocyclobutane (BCB) and silicon nitride (SiN x ). The pentacene TFT has lateral dimensions 192 μmx6 μm. The OTFT with the ITO bottom electrode shows a saturation mobility of 0.05∼0.09 cm 2 V -1 s -1 and an on-off current ratio of the order of 10 5 in a gate voltage span between 0 and -40 V. The TFT fabrication process steps had the beneficial side effect of changing the ITO surface from hydrophilic to hydrophobic. This change allows pentacene films with larger grains, observed up to 0.5 μm, to be grown on TFT compared to as-deposited ITO film onto which high quality films cannot be grown

  19. Preliminary results on TL and OSL aluminium oxide dosimeters developed at IPEN

    Energy Technology Data Exchange (ETDEWEB)

    Fukumori, David T.; Yoshito, Walter K.; Ussui, Valter; Lazar, Dolores R.R.; Campos, Leticia L., E-mail: fukumori@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2011-07-01

    The aluminum oxide composes the modern TL and OSL radiation dosimeters. TL and OSL phenomena are related to chemical elements in the crystalline structure of {alpha}-Al{sub 2}O{sub 3}. The aim of this work was to develop materials based on aluminum oxide for use in TL and OSL dosimetry. The studies included the dosimetric properties of alumina samples obtained by electro fusion, adsorption and coprecipitation. Electro fused alumina commercially available as abrasive particles was used to produce the pellets by glass sintering. Adsorption and coprecipitation were the methods used to insert metal ions to alumina. The best results were achieved with electro fused alumina and Tm{sup 3+} doped Al{sub 2}O{sub 3} pellets. The electro fused alumina-glass pellets show TL and OSL signals and the TL curve has two peaks. Its minimum detectable radiation dose is 7.2 mGy and the linearity of TL response as function of dose is up to about 800 mGy. The {alpha}-Al{sub 2}O{sub 3}:Tm pellets produced by sintering at 1550 deg C presented a meaningful TL glow curve so that it is worth studying their properties and viability of use in dosimetry. (author)

  20. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, Robert W. [Univ. of California, Berkeley, CA (United States); Muller, Rolf H. [Univ. of California, Berkeley, CA (United States)

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 - 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  1. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, R.W.; Muller, R.H.

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  2. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  3. Memristive Properties of Thin Film Cuprous Oxide

    Science.gov (United States)

    2011-03-01

    transition metal-oxide, or semiconductor material. On a macroscopic scale, such a metal/insulator/metal (MIM) system describes a capacitor. The dielectric... semiconductor . 5 The I-V relationship is characterized first by a linear region of high resistance, followed by a region where the relationship is...oxide ( CuO ) is around 1.2eV or 1034nm [15]; no noticeable features were seen in that range. The peaks around 470nm and 330nm have also been reported

  4. Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

    International Nuclear Information System (INIS)

    Vazquez, A.L.; Carrera, R.; Arce, E.; Castillo, N.; Castillo, S.; Moran-Pineda, M.

    2009-01-01

    Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O 2 /He oxidizing conditions (Praxair, 2.0% O 2 /He balance). According to the results, the samples that presented higher activities than those in Al 2 O 3 /Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al 2 O 3 /Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

  5. Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, A.L., E-mail: avazquezd@ipn.m [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Carrera, R. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Arce, E. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Castillo, N. [CINVESTAV, Departamento de Fisica. Av. IPN 2508, 07360, Mexico, D.F (Mexico); Castillo, S. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Moran-Pineda, M. [Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico)

    2009-08-26

    Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O{sub 2}/He oxidizing conditions (Praxair, 2.0% O{sub 2}/He balance). According to the results, the samples that presented higher activities than those in Al{sub 2}O{sub 3}/Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al{sub 2}O{sub 3}/Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

  6. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  7. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  8. Photoassisted oxidation of oil films on water

    Energy Technology Data Exchange (ETDEWEB)

    Heller, A.; Brock, J.R.

    1991-08-01

    The objective of the project is to develop TiO{sub 2}-based photocatalysts for the solar assisted oxidative dissolution of oil slicks. In a TiO{sub 2} crystal, absorption of a photon generates an electron-hole pair. The electron reacts with surface-adsorbed oxygen, reducing it to hydrogen peroxide; the hole directly oxidizes adsorbed organic compounds, usually via an intermediate OH radical. Since the density of TiO{sub 2} (3.8g/cc for anatase, 4.3 g/cc for rutile) is greater than that of either oil or seawater, TiO{sub 2} crystals are attached to inexpensive, engineered hollow glass microspheres to ensure flotation on the oil slick surface. Portions of the microsphere surface not covered by TiO{sub 2} are made oleophilic so that the microbeads will be preferentially attracted to the oil-air interface.

  9. Preparation and characterization of properties of electrodeposited copper oxide films

    Science.gov (United States)

    Wang, Longcheng

    Copper oxides, including cuprous oxide and cupric oxide, are prepared by electrochemical deposition. The structural, optical and electrical properties of as-deposited copper oxides are evaluated, based on which cuprous oxide is selected as a promising material for photovoltaic applications. Electrodeposited cuprous oxide is a p-type semiconductor with a direct band gap of 2.06 eV. The mechanism of how pH affects the structural and electrical properties of electrodeposited cuprous oxide films is studied. In the pH range of 7.5 to 12.0, there are three different preferred crystal orientations: (100), (110) and (111). With different orientations, cuprous oxide shows different surface morphology and grain size. Bath pH effect on structural properties is explained by its effect on the growth rate of different crystallographic planes with different Cu+/O2- ratios. Capacitance-voltage measurements are performed to study electrical properties of differently oriented cuprous oxide films. The results show that the flat band potential shifts negatively as the bath pH increases. Electrodeposited cupric oxide is a p-type cupric oxide with an indirect band gap of 1.32 eV. Different cleaning methods are used to clean the substrate surface for electrodeposition of cupric oxide. Electrochemical etching is proven to be an effective method for Cu substrate cleaning in cupric oxide deposition. In particular, in-situ electrochemical etching is developed, which prevents the cleaned substrate from exposure to air. Current-voltage characterization shows that cupric oxide deposited on electrochemically etched Cu substrates has favorable electrical properties and better rectification behavior. Cuprous oxide is selected for the fabrication of p-n homo-junction because it has better crystallinity, bigger grains, better control over crystal quality and a direct band gap. Based on the model that bath pH can control the stoichiometry and native point defects in electrodeposited cuprous oxide

  10. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    OpenAIRE

    Ganesh E. Patil; D. D. Kajale; D. N. Chavan; N. K. Pawar; V. B. Gaikwad; G. H. Jain

    2010-01-01

    Polycrystalline tin oxide (SnO2) thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT). The film was characterized for their phase and morphology by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2), liquefied petroleum gas (LPG), ethanol vapors (C2H5OH), NH3, CO, CO2, Cl2 an...

  11. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  12. Interaction between aluminium oxide pellets and Zircaloy tubes in steam atmospheres at temperatures above 12000C

    International Nuclear Information System (INIS)

    Hagen, S.; Hofmann, P.; Schanz, G.; Sepold, L.

    1988-09-01

    The burnable poison rods in light water reactors (LWR) consist of Al 2 O 3 /B 4 C pellets surrounded by Zircaloy-4 cladding tubes. In the Al 2 O 3 /B 4 C pellets of a LWR rod alumina is the main constituent (98.6 wt.-%) whereas boron carbide acts as neutron absorber. Failure of the Al 2 O 3 /Zircaloy test rods started at 1350 0 C when first droplets of molten material were observed running down the test bundle forming bundle blockages upon solidification. Post test examinations revealed that the process of liquefaction was initiated by a reduction of alumina by Zircaloy resulting in a (Zr, Al, O) melt which decomposed on cooldown into two metallic phases, a (Zr, Al) alloy and oxygen-stabilized a-Zr(O). The components of an extremely porous ceramic melt were also Zr, Al, and oxygen but with a higher oxygen content compared to the metallic melt. The ceramic melt decomposes on cooldown into an Al 2 O 3 /ZrO 2 eutectic with various amounts of primary constituents. Other types of relocated material were due to melting of essentially unreacted Zircaloy cladding and to debris formation by fracturing of oxidized cladding and Al 2 O 3 pellets stack residues. The interactions between Al 2 O 3 and Zircaloy occurring in a burnable poison rod are furthermore important for the behavior of the entire LWR core because the generated metals are able to attack the UO 2 chemically and dissolve or liquefy the fuel even below the melting point of Zircaloy (1760 0 C). As a result, fuel elements which contain burnable poison rods are expected to fail under severe accident conditions at about 1500 0 C. (orig./HP) [de

  13. Investigation and characterization of oxidized cellulose and cellulose nanofiber films

    Science.gov (United States)

    Yang, Han

    Over the last two decades, a large amount of research has focused on natural cellulose fibers, since they are "green" and renewable raw materials. Recently, nanomaterials science has attracted wide attention due to the large surface area and unique properties of nanoparticles. Cellulose certainly is becoming an important material in nanomaterials science, with the increasing demand of environmentally friendly materials. In this work, a novel method of preparing cellulose nanofibers (CNF) is being presented. This method contains up to three oxidation steps: periodate, chlorite and TEMPO (2,2,6,6-tetramethylpiperidinyl-1-oxyl) oxidation. The first two oxidation steps are investigated in the first part of this work. Cellulose pulp was oxidized to various extents by a two step-oxidation with sodium periodate, followed by sodium chlorite. The oxidized products can be separated into three different fractions. The mass ratio and charge content of each fraction were determined. The morphology, size distribution and crystallinity index of each fraction were measured by AFM, DLS and XRD, respectively. In the second part of this work, CNF were prepared and modified under various conditions, including (1) the introduction of various amounts of aldehyde groups onto CNF by periodate oxidation; (2) the carboxyl groups in sodium form on CNF were converted to acid form by treated with an acid type ion-exchange resin; (3) CNF were cross-linked in two different ways by employing adipic dihydrazide (ADH) as cross-linker and water-soluble 1-ethyl-3-[3-(dimethylaminopropyl)] carbodiimide (EDC) as carboxyl-activating agent. Films were fabricated with these modified CNF suspensions by vacuum filtration. The optical, mechanical and thermo-stability properties of these films were investigated by UV-visible spectrometry, tensile test and thermogravimetric analysis (TGA). Water vapor transmission rates (WVTR) and water contact angle (WCA) of these films were also studied.

  14. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  15. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  16. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  17. Comparative study of the cytotoxic and genotoxic effects of titanium oxide and aluminium oxide nanoparticles in Chinese hamster ovary (CHO-K1) cells

    Energy Technology Data Exchange (ETDEWEB)

    Di Virgilio, A.L. [Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), Diag. 113 y 64, Correo 16, Suc. 4, La Plata (1900) (Argentina); Reigosa, M. [Instituto Multidisciplinario de Biologia Celular (IMBICE), Calle 526 y Camino Gral. Belgrano (entre 10 y 11), La Plata 1900 (Argentina); Arnal, P.M. [Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), Diag. 113 y 64, Correo 16, Suc. 4, La Plata 1900 (Argentina); Fernandez Lorenzo de Mele, M., E-mail: mmele@inifta.unlp.edu.ar [Instituto de Investigaciones Fisicoquimicas Teoricas y Aplicadas (INIFTA), Diag. 113 y 64, Correo 16, Suc. 4, La Plata 1900 (Argentina)

    2010-05-15

    The aim of this study was to analyze the cytotoxicity and genotoxicity of titanium oxide (TiO{sub 2}) and aluminium oxide (Al{sub 2}O{sub 3}) nanoparticles (NPs) on Chinese hamster ovary (CHO-K1) cells using neutral red (NR), mitochondrial activity (by MTT assay), sister chromatid exchange (SCE), micronucleus (MN) formation, and cell cycle kinetics techniques. Results showed a dose-related cytotoxic effect evidenced after 24 h by changes in lysosomal and mitochondrial dehydrogenase activity. Interestingly, transmission electronic microscopy (TEM) showed the formation of perinuclear vesicles in CHO-K1 cells after treatment with both NPs during 24 h but no NP was detected in the nuclei. Genotoxic effects were shown by MN frequencies which significantly increased at 0.5 and 1 {mu}g/mL TiO{sub 2} and 0.5-10 {mu}g/mL Al{sub 2}O{sub 3}. SCE frequencies were higher for cells treated with 1-5 {mu}g/mL TiO{sub 2}. The absence of metaphases evidenced cytotoxicity for higher concentrations of TiO{sub 2}. No SCE induction was achieved after treatment with 1-25 {mu}g/mL Al{sub 2}O{sub 3}. In conclusion, findings showed cytotoxic and genotoxic effects of TiO{sub 2} and Al{sub 2}O{sub 3} NPs on CHO-K1 cells. Possible causes of controversial reports are discussed further on.

  18. Oxide films in laser additive manufactured Inconel 718

    International Nuclear Information System (INIS)

    Zhang, Y.N.; Cao, X.; Wanjara, P.; Medraj, M.

    2013-01-01

    A continuous-wave 5 kW fiber laser welding system was used in conduction mode to deposit Inconel® alloy 718 (IN718) by employing filler wire on as-serviced IN718 parent material (PM) substrates. The direct laser deposited (DLD) coupons and as-serviced IN718 PM were then evaluated through tensile testing. To understand the failure mechanisms, the tensile fracture surfaces of the as-serviced IN718 PM, DLD and DLD-PM samples were analyzed using scanning electron microscopy. The fracture surfaces revealed the presence of both Al 2 O 3 and Cr 2 O 3 films, although the latter was reasoned to be the main oxide in IN718. Both the experimental observations and thermodynamic analysis indicated that oxidation of some alloying elements in IN718 cannot be completely avoided during manufacturing, whether in the liquid state under vacuum (for casting, the electron beam melting, welding and/or deposition) or with inert gas protection (for welding or laser deposition). The exposed surface of the oxide film on the fracture surface has poor wetting with the metal and thus can constitute a lack of bonding or a crack with either the metal and/or another non-wetted side of the oxide film. On the other hand, the wetted face of the oxide film has good atom-to-atom contact with the metal and may nucleate some intermetallic compounds, such as Laves, Ni 3 Nb-δ, Nb-rich MC and γ′ compounds. The potential of their nucleation on Cr 2 O 3 was assessed using planar disregistry. Coherent planes were found between these intermetallics and Cr 2 O 3

  19. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  20. Zinc oxide doped graphene oxide films for gas sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Chetna,, E-mail: chetna2288@gmail.com; Kumar, Shani; Chaudhary, S.; Kapoor, A. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021 (India); Garg, A.; Chowdhuri, A.; Dhingra, V. [Department of Electronic Science, Acharya Narendra Dev College, University of Delhi, Kalkaji, New Delhi- 110019 (India)

    2016-05-06

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer’s method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  1. Electrosynthesis of highly transparent cobalt oxide water oxidation catalyst films from cobalt aminopolycarboxylate complexes.

    Science.gov (United States)

    Bonke, Shannon A; Wiechen, Mathias; Hocking, Rosalie K; Fang, Xi-Ya; Lupton, David W; MacFarlane, Douglas R; Spiccia, Leone

    2015-04-24

    Efficient catalysis of water oxidation represents one of the major challenges en route to efficient sunlight-driven water splitting. Cobalt oxides (CoOx ) have been widely investigated as water oxidation catalysts, although the incorporation of these materials into photoelectrochemical devices has been hindered by a lack of transparency. Herein, the electrosynthesis of transparent CoOx catalyst films is described by utilizing cobalt(II) aminopolycarboxylate complexes as precursors to the oxide. These complexes allow control over the deposition rate and morphology to enable the production of thin, catalytic CoOx films on a conductive substrate, which can be exploited in integrated photoelectrochemical devices. Notably, under a bias of 1.0 V (vs. Ag/AgCl), the film deposited from [Co(NTA)(OH2 )2 ](-) (NTA=nitrilotriacetate) decreased the transmission by only 10 % at λ=500 nm, but still generated >80 % of the water oxidation current produced by a [Co(OH2 )6 ](2+) -derived oxide film whose transmission was only 40 % at λ=500 nm. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Gas-phase Deposition of Thin Aluminium Oxide Films at Ambient Conditions

    NARCIS (Netherlands)

    Valdesueiro, D.

    2015-01-01

    Particles are widely used in the chemical industry as raw material and end product. In many applications of particles, it is advantageous to give them a coating that can either protect the particle from outside influences or give it an additional function. Technologies to provide micron-sized

  3. Implications of total content of silicon, aluminium, chromium and formation of thin ferrite films on low ductility at high temperature in non oriented electrical steels

    Directory of Open Access Journals (Sweden)

    Equihua-Guillén, F.

    2011-10-01

    Full Text Available This work shows evidence of the implications of total additions of silicon, aluminium and chromium on low ductility during hot rolling in non-oriented electrical steels. This paper explains the reason of ductility loss at temperatures between 950 - 1000°C in electrical steels which exhibit higher Ar3 transformation temperature than C-Mn and microalloyed steels. The empirical equations to determine Ar3 temperature do not consider silicon and aluminium elements. The results show that high content of silicon, aluminium and residual concentration of chromiun considerably increases Ar3 transformation temperature in non-oriented electrical steels. The low ductility at high temperature occurs between Ae3 and Ar3 transformation temperatures. In addition, the results of this work show evidence of thin ferrite films formed near Ar3 temperature and their implications on ductility loss at high temperature.

    Este trabajo muestra evidencia de las implicaciones de la cantidad total de silicio, aluminio y cromo sobre la baja ductilidad en aceros eléctricos durante la laminación en caliente. Este artículo explica la razón de la pérdida de ductilidad a temperaturas entre 950 y 1.000°C en aceros eléctricos. Las ecuaciones empíricas para determinar la temperatura Ar3 no consideran los elementos aluminio y silicio. Los resultados muestran que altos contenidos de silicio, aluminio y la concentración residual de cromo incrementan considerablemente la temperatura de transformación Ar3 en aceros eléctricos de grano no orientado. La baja ductilidad a elevada temperatura ocurre entre las temperaturas de transformación Ae3 y Ar3. Adicionalmente, los resultados de este trabajo muestran evidencia de películas delgadas de ferrita formadas a temperaturas cercanas a Ar3 y sus implicaciones sobre la pérdida de

  4. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  5. Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

    International Nuclear Information System (INIS)

    Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

    2013-01-01

    Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

  6. Thin Films of Reduced Hafnium Oxide with Excess Carbon for High-Temperature Oxidation Protection

    Science.gov (United States)

    2010-02-01

    deposited on the following substrates: Si, Si02 (fused silica), SiC (polished CVD slabs ), and highly oriented pyrolytic graphite (HOPG). For Si and...lost. SEM images of surfaces of films annealed in O2 show fissures (Fig. 14a) that become more pronounced for films with higher initial carbon...content (Fig. 14b). This indicates that the fissures are produced by the gaseous products of carbon oxidation (CO and CO2), which are generated in large

  7. PHOTOELECTRIC AND PHOTOMAGNETIC RESPONSE OF INDIUM-TIN OXIDE FILMS

    Directory of Open Access Journals (Sweden)

    I. K. Meshkovsky

    2015-11-01

    Full Text Available Subject of Research. The goal of the present research is investigation of photoelectric and photomagnetic response of ITO (indium-tin oxide films under UV laser irradiation. Method. The ITO films were prepared by magnetron sputtering with the thickness equal to 300nm. The films were irradiated by UV laser light with 248 nm wavelength in laser pulse energy range from 10 mJ to 150 mJ by KrF excimer laser. Metallic electrodes were deposited on the films. Information about the films surface topography was obtained by atomic force microscopy and scanning electron microscopy. The film structure was investigated by X-ray diffraction. Main Results. It was shown that voltage appears between metallic contacts under the UV light effect. The electric current was observed through resistive load. The anisotropy of electric field producing photoelectric response was demonstrated for the first time. The appearance of magnetic field under the laser light irradiation was observed for the first time. The dependence of the response voltage on the laser pulse energy was linear over the whole measured energy range. The following physical mechanism was proposed for description of the observed phenomenon: electric voltage is associated with non-uniform distribution of the average crystallite size along the film surface, and, therefore, with mean free path of the charge carriers along the film surface. Photomagnetic response could be associated with collective behavior of the large number of charged particles, created due to high intensity laser irradiation. Practical Relevance. The phenomenon being studied could be applied for creation of new optoelectronic devices, for example, modulators, optical detectors, etc. Particularly, due to linear dependence of photoelectric response on the laser pulse energy, this phenomenon is attractive for manufacturing of simple and cheap excimer laser pulse energy detectors.

  8. Modification of graphene oxide films by radiofrequency N2 plasma

    Science.gov (United States)

    Neustroev, E. P.; Burtseva, E. K.; Soloviev, B. D.; Prokopiev, A. R.; Popov, V. I.; Timofeev, V. B.

    2018-04-01

    The effect of treatment in nitrogen plasma on the properties of partially reduced graphene oxide (rGO) was studied. A comparison is made between two different sample locations in the reaction chamber. It is shown that in the case when rGO films were turned towards the inductor of the plasma system, the etching rate is much higher. Effective nitrogen functionalization of rGO was established in the second position, when the rGO films were turned in the opposite direction. In this case, the nitrogen content increases to 5 at% of the initial value. The change in the current-voltage characteristics is observed under illumination, which is independent of the wavelength. On and off daylight changes the resistance to 30% of the initial value. The magnitude of the photocurrent increases depending on the applied voltage. The effect is most noticeable for thin rGO films 10-15 nm in thickness.

  9. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  10. Tunable Nanostructures and Crystal Structures in Titanium Oxide Films

    Directory of Open Access Journals (Sweden)

    Fuess H

    2008-01-01

    Full Text Available Abstract Controllable nanostructures in spin coated titanium oxide (TiO2 films have been achieved by a very simple means, through change of post deposition annealing temperature. Electron beam imaging and reciprocal space analysis revealed as-deposited TiO2films to be characterized by a dominant anatase phase which converts to the rutile form at 600 °C and reverts to the anatase modification at 1,200 °C. The phase changes are also accompanied by changes in the film microstructure: from regular nanoparticles (as-deposited to nanowires (600 °C and finally to dendrite like shapes at 1,200 °C. Photoluminescence studies, Raman spectral results, and X-ray diffraction data also furnish evidence in support of the observed solid state phase transformations in TiO2.

  11. Reduction of graphene oxide and its effect on square resistance of reduced graphene oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Zhaoxia; Zhou, Yin; Li, Guang Bin; Wang, Shaohong; Wang, Mei Han; Hu, Xiaodan; Li, Siming [Liaoning Province Key Laboratory of New Functional Materials and Chemical Technology, School ofMechanical Engineering, Shenyang University, Shenyang (China)

    2015-06-15

    Graphite oxide was prepared via the modified Hummers’ method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of ~5746 Ω/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.

  12. Application of alternating current impedance measurements to characterize zirconium alloy oxidation films

    Science.gov (United States)

    Rosecrans, P. M.

    1982-06-01

    In an effort to understand observed differences in high temperature steam corrosion resistance, high frequency (500 Hz) a-c impedance measurements were used to monitor the permeability of oxidation films formed on Zircaloy 2 and Zircaloy 4 samples exposed to high temperature steam. Differences in oxidation resistance are related to differences in oxidation film permeability and ultimately to film characteristics. When these results are added to the existing data base established for zirconium alloy oxidation films using the high frequency impedance technique, improved understanding of the role of bulk corrodent access to the metal-oxide interface during oxidation becomes possible. In addition, differences in film character resulting from differences in oxidation environment become apparent upon review of the existing data base. Such differences may have practical application in selecting material preconditioning procedures and suggest explanations for some oxide film memory effects reported in the literature.

  13. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  14. Photocatalytic oxide films in the built environment

    Science.gov (United States)

    Österlund, Lars; Topalian, Zareh

    2014-11-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources - either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc.

  15. Photocatalytic oxide films in the built environment

    International Nuclear Information System (INIS)

    Österlund, Lars; Topalian, Zareh

    2014-01-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources – either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO 2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO 2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO 2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc

  16. Strontium doped hydroxyapatite film formed by micro-arc oxidation

    International Nuclear Information System (INIS)

    Nan Kaihui; Wu Tao; Chen Jionghao; Jiang Shan; Huang Yong; Pei Guoxian

    2009-01-01

    A porous strontium-doped hydroxyapatite (Sr-HA) film was prepared on titanium substrates by an electrochemical oxidation method, i.e. micro-arc oxidation (MAO). The reaction was processed using a pulse power supply with titanium substrate acted as the anode in electrolytic solution containing calcium acetate, strontium acetate and β-glycerol phosphate disodium salt pentahydrate (β-GP). The thickness, phase, composition and morphology of the coatings were investigated with X-ray diffraction (XRD), electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) with energy dispersive X-ray spectrometer (EDS). The thickness of the film was about 20 μm with the porous and uneven surfaces. XRD showed that the film was mainly made up of hydroxyapatite doped with strontium and the (Sr/(Sr + Ca) ratios ranged from 0-100%, which could be expressed as the general formula of Ca 10-X Sr X (PO 4 ) 6 (OH) 2 , 0 ≤ X ≤ 10). Such films are expected to have significant medical applications as dental implants and artificial bone joints.

  17. Metal oxide films on glass and steel substrates

    CERN Document Server

    Sohi, A M

    1987-01-01

    in the pH8 electrolyte supports the view that the rate limiting reduction reaction is possibly oxygen (or water) reduction although some contribution from an organic 'impurity' cannot be ruled out. Coatings of Fe sub 3 O sub 4 on mild steel have been prepared by CVD using pneumatic spraying techniques and the corrosion behaviour of coated electrodes in organic-phosphate electrolyte (pH8) has been examined. A variety of thin (10-1000nm) metal oxide films have been deposited on flat glass substrates by the pyrolysis of an aerosol of metal acetylacetonates in a suitable carrier. The optical characteristics and thickness of the films have been measured and particular interest has centered on the use of a novel pin on disc apparatus to measure the physical durability of such thin films. Characteristic friction/penetration force traces have been established for 1st Series transition metal oxide films and some ranking in terms of 'hardness' established. The use of SnO sub 2 - coated glass for electrodes in a light m...

  18. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  19. Glancing angle x-ray studies of oxide films

    International Nuclear Information System (INIS)

    Davenport, A.J.; Isaacs, H.S.

    1989-01-01

    High brightness synchrotron radiation incident at glancing angles has been used to study inhibiting species present in low concentrations in oxide films on aluminum. Glancing incident angle fluorescence measurements give surface-sensitive information on the valence state of elements from the shape of the x-ray absorption edge. Angle-resolved measurements show the depth distribution of the species present. 15 refs., 4 figs

  20. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  1. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  2. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  3. Design and Analysis of Butterfly Valve Disc Using Aluminium (1100 ...

    African Journals Online (AJOL)

    Aluminium (1100) is an extensively used material in the application of water line and drainage applications. If the aluminium (1100) surface contacts the water, an oxide layer will be formed and it prevents the corrosion of aluminium (1100) when compared to other metal and also it has less weight. But due to their low ...

  4. Magnetic transparent conducting oxide film and method of making

    Science.gov (United States)

    Windisch, Jr., Charles F.; Exarhos, Gregory J.; Sharma, Shiv K.

    2004-07-13

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 .OMEGA..multidot.cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450.degree. C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 .mu.m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn.sup.2+, Al.sup.3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo.sub.2 O.sub.4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x0.67, the oxide was all spinel but the increased Co content lowered the conductivity. The influence of cation charge state and site occupancy in the spinel structure markedly affects calculated electron band structures and contributes to a reduction of p-type conductivity, the formation of polarons, and the reduction in population of mobile charge carriers that tend to limit transmission in the infrared.

  5. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Xu, E-mail: GAO.Xu@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito, E-mail: GAO.Xu@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  6. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  7. Polymer assisted deposition of electrochromic tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kalagi, S.S. [Govindram Seksaria Science College, Belgaum 590006, Karnataka (India); Dalavi, D.S.; Pawar, R.C.; Tarwal, N.L.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2010-03-18

    We report the synthesis of structurally and uniformly deposited porous tungsten oxide (WO{sub 3}) thin films for the first time by the novel route of polymer assisted deposition (PAD) using ammonium tungstate as a precursor with polyvinyl alcohol (PVA) as an additive. The effect of deposition parameters on the morphological, optical and electrochemical performance of the thin films is investigated. WO{sub 3} thin films were characterized for their structural, morphological, optical and electrochromic properties. XRD result indicates monoclinic phase of WO{sub 2.92}. FT-Raman studies show high intensity peaks centered at 997 cm{sup -1}and 798 cm{sup -1}. SEM results indicate that there is uniform deposition of porous WO{sub 3}-PVA agglomerates on the transparent substrates. SEM data show low dense structure of an average grain size of about 1 {mu}m. Electrochromic studies reveal highly reversible and the stable nature of the thin films. Transmission data show an optical modulation density of 46.57% at 630 nm with an excellent reversibility of 89% and an electrochromic coloration efficiency of 36 cm{sup 2}/C.

  8. Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

    International Nuclear Information System (INIS)

    Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M.

    2004-01-01

    A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering

  9. Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

    Science.gov (United States)

    Barquinha, Pedro Miguel Candido

    This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to

  10. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  11. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  12. Microorganism mediated synthesis of reduced graphene oxide films

    International Nuclear Information System (INIS)

    Tanizawa, Y; Suda, Y; Takikawa, H; Okada, H; Sandhu, A; Okamoto, Y; Tsuzuki, K; Nagao, Y; Iwasa, S; Hiraishi, A; Yoshida, N; Tero, R; Numano, R; Ishikawa, R

    2012-01-01

    The wide-ranging industrial application of graphene and related compounds has led researchers to devise methods for the synthesis of high quality graphene. We recently reported on the chemical synthesis, patterning, and doping of graphene films by the chemical exfoliation of graphite into graphene oxide (GO) with subsequent chemical reduction into graphene films. Here, we describe a hybrid approach for the synthesis of reduced graphene sheets, where chemically derived GO was reduced by microorganisms extracted from a riverside near the University. Our procedure enabled the production of ∼100 μm sized reduced graphene sheets, which showed excellent Raman spectra associated with high quality reduced graphene. We give a detailed account of the relationship between the type of microorganisms and the properties of the resulting reduced graphene.

  13. Structural characterization of sputtered indium oxide films deposited at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hotovy, I., E-mail: ivan.hotovy@stuba.s [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Pezoldt, J. [FG Nanotechnologie, Institut fuer Mikro- und Nanoelektronik, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Kadlecikova, M. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Kups, T.; Spiess, L. [FG Werkstoffe der Elektrotechnik, Institut fuer Werkstofftechnik, TU Ilmeau, Postfach 100565, 98684 Ilmenau (Germany); Breza, J. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Sakalauskas, E.; Goldhahn, R. [FG Exprimentalphysik I, Institut fuer Physik, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Rehacek, V. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia)

    2010-06-01

    Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In{sub 2}O{sub 3}) films showed a dominating randomly oriented nanocrystalline structure of cubic In{sub 2}O{sub 3}. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.

  14. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Directory of Open Access Journals (Sweden)

    Simelys Hernández

    2016-04-01

    Full Text Available Manganese oxides (MnOx, being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs. This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water. To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  15. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts.

    Science.gov (United States)

    Hernández, Simelys; Ottone, Carminna; Varetti, Sara; Fontana, Marco; Pugliese, Diego; Saracco, Guido; Bonelli, Barbara; Armandi, Marco

    2016-04-19

    Manganese oxides (MnO x ), being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs). This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC) films of commercial Mn₂O₃, Mn₃O₄ and MnO₂ powders. Spin coating consists of few preparation steps and employs green chemicals ( i.e. , ethanol, acetic acid, polyethylene oxide and water). To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnO x films were also prepared by means of electrodeposition (ED) and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn₂O₃-based films, since Mn (III) species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO₂-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn₂O₃ crystalline phase. Electrochemical impedance spectroscopy (EIS) measurements were performed to study both electrode charge transport properties and electrode-electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn₂O₃ SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  16. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Science.gov (United States)

    Hernández, Simelys; Ottone, Carminna; Varetti, Sara; Fontana, Marco; Pugliese, Diego; Saracco, Guido; Bonelli, Barbara; Armandi, Marco

    2016-01-01

    Manganese oxides (MnOx), being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs). This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC) films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water). To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED) and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III) species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS) measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders. PMID:28773419

  17. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  18. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Sumita; Kumar, Mukesh, E-mail: kumarmukesh@gmail.com; Kumar, Dinesh; Sharma, Sumit

    2015-06-30

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO{sub 2}/Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents.

  19. Plasma Enhanced Complete Oxidation of Ultrathin Epitaxial Praseodymia Films on Si(111

    Directory of Open Access Journals (Sweden)

    Olga Kuschel

    2015-09-01

    Full Text Available Praseodymia films have been exposed to oxygen plasma at room temperature after deposition on Si(111 via molecular beam epitaxy. Different parameters as film thickness, exposure time and flux during plasma treatment have been varied to study their influence on the oxygen plasma oxidation process. The surface near regions have been investigated by means of X-ray photoelectron spectroscopy showing that the plasma treatment transforms the stoichiometry of the films from Pr2O3 to PrO2. Closer inspection of the bulk properties of the films by means of synchrotron radiation based X-ray reflectometry and diffraction confirms this transformation if the films are thicker than some critical thickness of 6 nm. The layer distance of these films is extremely small verifying the completeness of the plasma oxidation process. Thinner films, however, cannot be transformed completely. For all films, less oxidized very thin interlayers are detected by these experimental techniques.

  20. Oxidizing annealing effects on VO{sub 2} films with different microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Yan-Kun, E-mail: douyankun3@163.com; Li, Jing-Bo, E-mail: lijb@bit.edu.cn; Cao, Mao-Sheng, E-mail: caomaosheng@bit.edu.cn; Su, De-Zhi, E-mail: sudezhihefish@126.com; Rehman, Fida, E-mail: fida_ph@yahoo.com; Zhang, Jia-Song, E-mail: zhangjiasong@126.com; Jin, Hai-Bo, E-mail: hbjin@bit.edu.cn

    2015-08-01

    Vanadium dioxide (VO{sub 2}) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO{sub 2} films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO{sub 2} films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO{sub 2} films with different microstructures in oxidation environment. The oxidized VO{sub 2} films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO{sub 2} films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO{sub 2} films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO{sub 2} films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO{sub 2} films, and provide useful knowledge for the design of VO{sub 2} materials to different applications.

  1. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  2. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  3. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  4. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  5. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    Science.gov (United States)

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  6. Electrochromic properties of electrodeposited tungsten oxide (WO3) thin film

    Science.gov (United States)

    Dalavi, D. S.; Kalagi, S. S.; Mali, S. S.; More, A. J.; Patil, R. S.; Patil, P. S.

    2012-06-01

    In this work, we report on a potentiostatic electrochemical procedure employing an ethanolic solution of peroxotungstic acid yielded tungsten oxide (WO3) films specifically for transmissive electrochromic devices (ECDs) such as "smart windows". WO3 film was confirmed from the binding energy determination by X-ray photoelectron spectroscopic studies. The diffusion coefficient during intercalation and deintercalation was found to be 2.59×10-10 and 2.40×10-10 cm2/C. Electrodeposited WO3 produce high color/bleach transmittance difference up to 74% at 630 nm. On reduction of WO3, the CIELAB 1931 2% color space coordinates show the transition from colorless to the deep blue state (L=95.18, a=2.12, b=0.3138, and L=57.78, a=-21.79, b=0.244) with steady decrease in relative luminance. The highest coloration efficiency (CE) of 92 cm2/C and good response time of 10.28 for coloration (reduction) and 3.2 s for bleaching (oxidation) was observed with an excellent reversibility of 89%.

  7. Aluminium in human sweat.

    Science.gov (United States)

    Minshall, Clare; Nadal, Jodie; Exley, Christopher

    2014-01-01

    It is of burgeoning importance that the human body burden of aluminium is understood and is measured. There are surprisingly few data to describe human excretion of systemic aluminium and almost no reliable data which relate to aluminium in sweat. We have measured the aluminium content of sweat in 20 healthy volunteers following mild exercise. The concentration of aluminium ranged from 329 to 5329μg/L. These data equate to a daily excretion of between 234 and 7192μg aluminium and they strongly suggest that perspiration is the major route of excretion of systemic aluminium in humans. Copyright © 2013 Elsevier GmbH. All rights reserved.

  8. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  9. Aluminium Pneumoconiosis I. In Vitro Comparison of Stamped Aluminium Powders Containing Different Lubricating Agents and a Granular Aluminium Powder

    Science.gov (United States)

    Corrin, B.

    1963-01-01

    The discrepancy in previous reports of the action of aluminium on the lung may be explained by differences between stamped and granular aluminium powders. A stamped powder of the variety causing pulmonary fibrosis showed a brisk reaction with water, but a granular powder was unreactive. This difference is primarily due to the granular particles being covered by inert aluminium oxide, the formation of which is partially prevented in the stamping process by stearine and mineral oil. The reactivity of the flake-like stamped particles is also dependent on their large surface area per unit volume. The appearance of aluminium pneumoconiosis in Britain is explained by the introduction of mineral oil into the stamping industry for, in contrast to stearine, mineral oil permits the powder to react with water. The lung damage is believed to be caused by a soluble form of aluminium. PMID:14072616

  10. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  11. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    Science.gov (United States)

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Investigation on the pure and fluorine doped vanadium oxide thin films deposited by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Ramamurthi, K., E-mail: krmurthin@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625021, Tamil Nadu (India)

    2016-05-01

    Vanadium oxide and fluorine doped vanadium oxide thin films were deposited on the micro-slide glass substrates at 400 °C by spray pyrolysis technique. Vanadium oxide films were deposited using 0.1 M ammonium meta vanadate aqua solution. Precursor solution used to deposit fluorine doped vanadium oxide films was prepared adding separately 5 wt.%, 10 wt.%, 15 wt.% and 20 wt.% of ammonium fluoride with the 0.1 M ammonium meta vanadate aqua solution. X-ray diffraction results showed that the films are in mixed phases of β-V{sub 2}O{sub 5}, V{sub 2}O{sub 5} and V{sub 3}O{sub 7}. Surface morphology and band gap of these films were modified due to different levels of fluorine doping. The average visible transmittance (500–800 nm) of vanadium oxide films is decreased due to low level concentration of fluorine doping. - Highlights: • Addition of a few ml HCl yielded clear precursor aqua solution. • F doped vanadium oxide films were deposited for less concentration of fluorine. • Low level fluorine doping modified the surface morphology of the thin films. • Direct band gap of vanadium oxide film is slightly increased by fluorine doping.

  13. Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-12-01

    Full Text Available We investigated the effects of gallium (Ga and tin (Sn compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs. The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide and 0.30 (Sn oxide to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0:Sn(0.9 oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.

  14. Indium oxide thin film based ammonia gas and ethanol vapour sensor

    Indian Academy of Sciences (India)

    For the fabrication of miniature heater indium tin oxide thin film was grown on special high temperature corning glass substrate by flash evaporation method. Gold was deposited on the film using thermal evaporation technique under high vacuum. The film was then annealed at 700 K for an hour. The thermocouple attached ...

  15. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Unknown

    Keywords. Transparent conductors; ZnO thin films; photovoltaics. 1. Introduction. Zinc oxide is an n-type semiconductor with a wide direct band gap of 3⋅3 eV. Thin films of ZnO find application as transparent conducting electrode in photovoltaics, .... surface energy will become larger as the film grows. Then the growth ...

  16. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    NARCIS (Netherlands)

    Ghimbeu, C.M.; Lumbreras, M.; Schoonman, J.; Siadat, M.

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2), tungsten oxide (WO3) and indium oxide (In2O3) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and

  17. Room temperature transparent conducting oxides based on zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Clatot, J. [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France); Campet, G. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Zeinert, A. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue St. Leu, 80039, Amiens (France); Labrugere, C. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Rougier, A., E-mail: aline.rougier@u-picardie.fr [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France)

    2011-04-01

    Doped zinc oxide thin films are grown on glass substrate at room temperature under oxygen atmosphere, using pulsed laser deposition (PLD). O{sub 2} pressure below 1 Pa leads to conductive films. A careful characterization of the film stoichiometry and microstructure using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) concludes on a decrease in crystallinity with Al and Ga additions ({<=}3%). The progressive loss of the (0 0 2) orientation is associated with a variation of the c parameter value as a function of the film thickness and substrate nature. ZnO:Al and ZnO:Ga thin films show a high optical transmittance (>80%) with an increase in band gap from 3.27 eV (pure ZnO) to 3.88 eV and 3.61 eV for Al and Ga doping, respectively. Optical carrier concentration, optical mobility and optical resistivity are deduced from simulation of the optical data.

  18. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  19. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  20. Growth and Dissolution of Iron and Manganese Oxide Films

    Energy Technology Data Exchange (ETDEWEB)

    Scot T. Martin

    2008-12-22

    Growth and dissolution of Fe and Mn oxide films are key regulators of the fate and transport of heavy metals in the environment, especially during changing seasonal conditions of pH and dissolved oxygen. The Fe and Mn are present at much higher concentrations than the heavy metals, and, when Fe and Mn precipitate as oxide films, heavy metals surface adsorb or co-precipitate and are thus essentially immobilized. Conversely, when the Fe and Mn oxide films dissolve, the heavy metals are released to aqueous solution and are thus mobilized for transport. Therefore, understanding the dynamics and properties of Fe and Mn oxide films and thus on the uptake and release of heavy metals is critically important to any attempt to develop mechanistic, quantitative models of the fate, transport, and bioavailablity of heavy metals. A primary capability developed in our earlier work was the ability to grow manganese oxide (MnO{sub x}) films on rhodochrosite (MnCO{sub 3}) substrate in presence of dissolved oxygen under mild alkaline conditions. The morphology of the films was characterized using contact-mode atomic force microscopy. The initial growth began by heteroepitaxial nucleation. The resulting films had maximum heights of 1.5 to 2 nm as a result of thermodynamic constraints. Over the three past years, we have investigated the effects of MnO{sub x} growth on the interactions of MnCO{sub 3} with charged ions and microorganisms, as regulated by the surface electrical properties of the mineral. In 2006, we demonstrated that MnO{sub x} growth could induce interfacial repulsion and surface adhesion on the otherwise neutral MnCO{sub 3} substrate under environmental conditions. Using force-volume microscopy (FVM), we measured the interfacial and adhesive forces on a MnO{sub x}/MnCO{sub 3} surface with a negatively charged silicon nitride tip in a 10-mM NaNO3 solution at pH 7.4. The interfacial force and surface adhesion of MnOx were approximately 40 pN and 600 pN, respectively

  1. Preparation of ordered mesoporous nickel oxide film electrodes via lyotropic liquid crystal templated electrodeposition route

    International Nuclear Information System (INIS)

    Zhao Dandan; Xu Maowen; Zhou Wenjia; Zhang Jin; Li Hulin

    2008-01-01

    A novel electrochemical route to fabricate ordered mesoporous metal oxide film electrodes has been investigated with particular reference to nickel oxide. Ordered mesoporous nickel oxide films are successfully synthesized by templated electrodeposition of H I -e nickel hydroxide and followed by heat-treatment in air at various temperatures. The films are characterized physically by thermogravimetry (TG), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The applicability of this film as inexpensive and high-performance supercapacitor electrode material is demonstrated by the electrochemical characterization using cyclic voltammetry (CV) and chronopotentiometry technique. The specific capacitance of the nickel oxide film depends on the annealing temperature, showing a maximum value of 590 F g -1 when the as-deposited film is heat-treated at 250 deg. C for 1.5 h

  2. Semiconducting properties of oxide and passive films formed on AISI 304 stainless steel and Alloy 600

    Directory of Open Access Journals (Sweden)

    Ferreira M. G. S.

    2002-01-01

    Full Text Available The semiconducting properties of passive films formed on AISI 304 stainless steel and Alloy 600 in borate buffer solution were studied by capacitance (Mott-Schottky approach and photocurrent measurements. Oxide films formed on 304 stainless steel in air at 350 ºC have also been studied. The results obtained show that, in all cases the electronic structure of the films is comparable to that of a p-n heterojunction in which the space charges developed at the metal-film and film-electrolyte interfaces have also to be considered. This is in accordance with analytical results showing that the oxide films are in all cases composed of an inner region rich in chromium oxide and an outer region rich in iron oxide.

  3. ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Hongsingthong, Aswin; Krajangsang, Taweewat; Afdi Yunaz, Ihsanul; Miyajima, Shinsuke; Konagai, Makoto

    2010-05-01

    We successfully increased the haze value of zinc oxide (ZnO) films fabricated using metal-organic chemical vapor deposition (MOCVD) by conducting glass-substrate etching before film deposition. It was found that with increasing the glass treatment time, the surface morphology of ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like multi texture. Further, the rms roughness and the haze value of the films increased remarkably. Using ZnO films with a high haze value as front transparent conductive oxide (TCO) films in hydrogenated microcrystalline silicon (µc-Si:H) solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region.

  4. A nanogravimmetric investigation of the charging processes on ruthenium oxide thin films and their effect on methanol oxidation

    International Nuclear Information System (INIS)

    Santos, M.C.; Cogo, L.; Tanimoto, S.T.; Calegaro, M.L.; Bulhoes, L.O.S

    2006-01-01

    The charging processes and methanol oxidation that occur during the oxidation-reduction cycles in a ruthenium oxide thin film electrode (deposited by the sol-gel method on Pt covered quartz crystals) were investigated by using cyclic voltammetry, chronoamperometry and electrochemical quartz crystal nanobalance techniques. The ruthenium oxide rutile phase structure was determined by X-ray diffraction analysis. The results obtained during the charging of rutile ruthenium oxide films indicate that in the anodic sweep the transition from Ru(II) to Ru(VI) occurs followed by proton de-intercalation. In the cathodic sweep, electron injection occurs followed by proton intercalation, leading to Ru(II). The proton intercalation/de-intercalation processes can be inferred from the mass/charge relationship which gives a slope close to 1 g mol -1 (multiplied by the Faraday constant) corresponding to the molar mass of hydrogen. From the chronoamperometric measurements, charge and mass saturation of the RuO 2 thin films was observed (440 ng cm -2 ) during the charging processes, which is related to the total number of active sites in these films. Using the electrochemical quartz crystal nanobalance technique to study the methanol oxidation reaction at these films was possible to demonstrate that bulk oxidation occurs without the formation of strongly adsorbed intermediates such as CO ads , demonstrating that Pt electrodes modified by ruthenium oxide particles can be promising catalysts for the methanol oxidation as already shown in the literature

  5. Study of thin oxide films by electron, ion and synchrotron radiation beams

    CERN Document Server

    Sammelselg, V; Tarre, A; Asari, J; Rauhala, E; Arstila, K; Seppaelae, A; Zakharov, A; Aarik, J; Karlis, J; Martinson, Indrek

    2002-01-01

    Titanium oxide and zirconium oxide thin films deposited on silicon substrates were characterized using electron probe microanalysis (EPMA), Rutherford backscattering spectroscopy (RBS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning photoelectron microscopy (SPEM). The composition and mass thickness of the films were determined and the results of different methods compared. lt was revealed that the synchrotron radiation used for SPEM studies caused considerable modification of zirconia films grown at low temperatures. (author)

  6. Anodic formation of low-aspect-ratio porous alumina films for metal-oxide sensor application

    International Nuclear Information System (INIS)

    Gorokh, G.; Mozalev, A.; Solovei, D.; Khatko, V.; Llobet, E.; Correig, X.

    2006-01-01

    Thin nanoporous anodic alumina films, of low aspect ratio (1:1), with two distinctive pore sizes and morphologies were prepared by two-step constant-current anodising of aluminium layers on SiO 2 /Si substrates in 0.4 mol dm -3 tartaric (TA) and malonic acid (MA) electrolytes and then modified by open-circuit dissolution. The anodic films were employed as a support material for sputtering-deposition of thin WO 3 layers in view of exploiting their gas sensing properties. The films and deposits were characterized by scanning electron microscopy, X-ray diffraction and electric resistance measurements at fixed temperatures in the range of 100-300 deg. C upon NH 3 and CO gas exposures. Test sensors prepared from the annealed and stabilized alumina-supported WO 3 active layers were insensitive to CO but showed considerably enhanced responses to NH 3 at 300 deg. C, the sensitivity depending upon the anodic film nature, the pore size and the surface morphology. The increased sensor sensitivity is due to the substantially enlarged film surface area of the TA-supported WO 3 films and the nanostructured, camomile-like morphology of the MA-supported WO 3 films. Sensing mechanisms in the alumina-supported WO 3 active layers are discussed

  7. Raman and XPS characterization of vanadium oxide thin films with temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

    2017-05-01

    Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

  8. Metal oxide semiconductor thin-film transistors for flexible electronics

    Science.gov (United States)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  9. Metal oxide semiconductor thin-film transistors for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Petti, Luisa; Vogt, Christian; Büthe, Lars; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Münzenrieder, Niko [Electronics Laboratory, Swiss Federal Institute of Technology, Zürich (Switzerland); Sensor Technology Research Centre, University of Sussex, Falmer (United Kingdom); Faber, Hendrik; Bottacchi, Francesca; Anthopoulos, Thomas D. [Department of Physics and Centre for Plastic Electronics, Imperial College London, London (United Kingdom)

    2016-06-15

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In

  10. Lactobacillus plantarum CCFM639 alleviates aluminium toxicity.

    Science.gov (United States)

    Yu, Leilei; Zhai, Qixiao; Liu, Xiaoming; Wang, Gang; Zhang, Qiuxiang; Zhao, Jianxin; Narbad, Arjan; Zhang, Hao; Tian, Fengwei; Chen, Wei

    2016-02-01

    Aluminium (Al) is the most abundant metal in the earth's crust. Al exposure can cause a variety of adverse physiological effects in humans and animals. Our aim was to demonstrate that specific probiotic bacteria can play a special physiologically functional role in protection against Al toxicity in mice. Thirty strains of lactic acid bacteria (LAB) were tested for their aluminium-binding ability, aluminium tolerance, their antioxidative capacity, and their ability to survive the exposure to artificial gastrointestinal (GI) juices. Lactobacillus plantarum CCFM639 was selected for animal experiments because of its excellent performance in vitro. Forty mice were divided into four groups: control, Al only, Al plus CCFM639, and Al plus deferiprone (DFP). CCFM639 was administered at 10(9) CFU once daily for 10 days, followed by a single oral dose of aluminium chloride hexahydrate at 5.14 mg aluminium (LD50) for each mouse. The results showed that CCFM639 treatment led to a significant reduction in the mortality rates with corresponding decrease in intestinal aluminium absorption and in accumulation of aluminium in the tissues and amelioration of hepatic histopathological damage. This probiotic treatment also resulted in alleviation of hepatic, renal, and cerebral oxidative stress. The treatment of L. plantarum CCFM639 has potential as a therapeutic dietary strategy against acute aluminium toxicity.

  11. On the Design of Oxide Films, Nanomaterials, and Heterostructures for Solar Water Oxidation Photoanodes

    Science.gov (United States)

    Kronawitter, Coleman Xaver

    Photoelectrochemistry and its associated technologies show unique potential to facilitate the large-scale production of solar fuels—those energy-rich chemicals obtained through conversion processes driven by solar energy, mimicking the photosynthetic process of green plants. The critical component of photoelectrochemical devices designed for this purpose is the semiconductor photoelectrode, which must be optically absorptive, chemically stable, and possess the required electronic band alignment with respect to the redox couple of the electrolyte to drive the relevant electrochemical reactions. After many decades of investigation, the primary technological obstacle remains the development of photoelectrode structures capable of efficient and stable conversion of light with visible frequencies, which is abundant in the solar spectrum. Metal oxides represent one of the few material classes that can be made photoactive and remain stable to perform the required functions. The unique range of functional properties of oxides, and especially the oxides of transition metals, relates to their associated diversity of cation oxidation states, cation electronic configurations, and crystal structures. In this dissertation, the use of metal oxide films, nanomaterials, and heterostructures in photoelectrodes enabling the solar-driven oxidation of water and generation of hydrogen fuel is examined. A range of transition- and post-transition-metal oxide material systems and nanoscale architectures is presented. The first chapters present results related to electrodes based on alpha-phase iron(III) oxide, a promising visible-light-active material widely investigated for this application. Studies of porous films fabricated by physical vapor deposition reveal the importance of structural quality, as determined by the deposition substrate temperature, on photoelectrochemical performance. Heterostructures with nanoscale feature dimensionality are explored and reviewed in a later chapter

  12. Measurements of processes in ruthenium oxide film electrodes with the quartz-crystal microbalance technique

    International Nuclear Information System (INIS)

    Buttry, D.; Gottesfeld, S.

    1987-01-01

    The authors describe the first application of the quartz-crystal microbalance (QCM) technique for monitoring electrochemical processes in oxide film electrodes. They have investigated a film of ruthenium oxide, applied by the thermal decomposition of ruthenium chloride onto one side of the quartz-crystal. The quartz-crystal was precoated with gold keyhole patterns on both sides for inducing the 5 MHz resonance, followed by a thin Ti layer to ensure good adherence of the ruthenium oxide. Ruthenium oxide films are being investigated at Los Alamos for potential use in electrochemical capacitors. The material exhibits large charge capacity per geometric area and fast charge-discharge rates. Different possible processes can be responsible for charge compensation in such oxide materials, including those associated with simple double-layer charging, with pseudocapacitance, and with ion insertion into the small grains of the high-surface-area oxide material. The dynamics of such processes are determined, for a given oxide film, by the nature of the electrolyte and the resulting mechanism of charge-compensation. The QCM technique provides interesting information on these processes, as well as on film hydration and film dissolution process. The authors' initial results are presented in this paper. The results demonstrate the QCM as a sensitive tool for following not only ionic insertion processes during potential modulation, but also processes of film swelling and film dissolution

  13. Deformation of confined poly(ethylene oxide) in multilayer films.

    Science.gov (United States)

    Lai, Chuan-Yar; Hiltner, Anne; Baer, Eric; Korley, LaShanda T J

    2012-04-01

    The effect of confinement on the deformation behavior of poly(ethylene oxide) (PEO) was studied using melt processed coextruded poly(ethylene-co-acrylic acid) (EAA) and PEO multilayer films with varying PEO layer thicknesses from 3600 to 25 nm. The deformation mechanism was found to shift as layer thickness was decreased between 510 and 125 nm, from typical axial alignment of the crystalline fraction, as seen in bulk materials, to nonuniform micronecking mechanisms found in solution-grown single crystals. This change was evaluated via tensile testing, wide-angle X-ray diffraction (WAXD), atomic force microscopy (AFM), and differential scanning calorimetry (DSC). With the commercially relevant method of melt coextrusion, we were able to overcome the limitations to the testing of solution-grown single crystals, and the artifacts that occur from their handling, and bridged the gap in knowledge between thick bulk materials and thin single crystals.

  14. Energetic Surface Smoothing of Complex Metal-Oxide Thin Films

    International Nuclear Information System (INIS)

    Willmott, P.R.; Herger, R.; Schlepuetz, C.M.; Martoccia, D.; Patterson, B.D.

    2006-01-01

    A novel energetic smoothing mechanism in the growth of complex metal-oxide thin films is reported from in situ kinetic studies of pulsed laser deposition of La 1-x Sr x MnO 3 on SrTiO 3 , using x-ray reflectivity. Below 50% monolayer coverage, prompt insertion of energetic impinging species into small-diameter islands causes them to break up to form daughter islands. This smoothing mechanism therefore inhibits the formation of large-diameter 2D islands and the seeding of 3D growth. Above 50% coverage, islands begin to coalesce and their breakup is thereby suppressed. The energy of the incident flux is instead rechanneled into enhanced surface diffusion, which leads to an increase in the effective surface temperature of ΔT≅500 K. These results have important implications on optimal conditions for nanoscale device fabrication using these materials

  15. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  16. Decomposition of Organometal Halide Perovskite Films on Zinc Oxide Nanoparticles.

    Science.gov (United States)

    Cheng, Yuanhang; Yang, Qing-Dan; Xiao, Jingyang; Xue, Qifan; Li, Ho-Wa; Guan, Zhiqiang; Yip, Hin-Lap; Tsang, Sai-Wing

    2015-09-16

    Solution processed zinc oxide (ZnO) nanoparticles (NPs) with excellent electron transport properties and a low-temperature process is a viable candidate to replace titanium dioxide (TiO2) as electron transport layer to develop high-efficiency perovskite solar cells on flexible substrates. However, the number of reported high-performance perovskite solar cells using ZnO-NPs is still limited. Here we report a detailed investigation on the chemistry and crystal growth of CH3NH3PbI3 perovskite on ZnO-NP thin films. We find that the perovskite films would severely decompose into PbI2 upon thermal annealing on the bare ZnO-NP surface. X-ray photoelectron spectroscopy (XPS) results show that the hydroxide groups on the ZnO-NP surface accelerate the decomposition of the perovskite films. To reduce the decomposition, we introduce a buffer layer in between the ZnO-NPs and perovskite layers. We find that a commonly used buffer layer with small molecule [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) can slow down but cannot completely avoid the decomposition. On the other hand, a polymeric buffer layer using poly(ethylenimine) (PEI) can effectively separate the ZnO-NPs and perovskite, which allows larger crystal formation with thermal annealing. The power conversion efficiencies of perovskite photovoltaic cells are significantly increased from 6.4% to 10.2% by replacing PC61BM with PEI as the buffer layer.

  17. Hybrid dextran-iron oxide thin films deposited by laser techniques for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Predoi, D.; Ciobanu, C.S. [National Institute for Physics of Materials, P.O. Box MG 07, Bucharest, Magurele (Romania); Radu, M.; Costache, M.; Dinischiotu, A. [Molecular Biology Center, University of Bucharest, 91-95 Splaiul Independentei, 76201, Bucharest 5 (Romania); Popescu, C.; Axente, E.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Gyorgy, E., E-mail: egyorgy@cin2.es [National Institute for Lasers, Plasma and Radiations Physics, P. O. Box MG 36, 77125 Bucharest (Romania); Consejo Superior de Investigaciones Cientificas, Centre d' Investigacions en Nanociencia i Nanotecnologia (CSIC-CIN2), Campus UAB, 08193 Bellaterra (Spain)

    2012-02-01

    Iron oxide nanoparticles were prepared by chemical co-precipitation method. The nanoparticles were mixed with dextran in distilled water. The obtained solutions were frozen in liquid nitrogen and used as targets during matrix assisted pulsed laser evaporation for the growth of hybrid, iron oxide nanoparticles-dextran thin films. Fourier Transform Infrared Spectroscopy and X-ray diffraction investigations revealed that the obtained films preserve the structure and composition of the initial, non-irradiated iron oxide-dextran composite material. The biocompatibility of the iron oxide-dextran thin films was demonstrated by 3-(4.5 dimethylthiazol-2yl)-2.5-diphenyltetrazolium bromide-based colorimetric assay, using human liver hepatocellular carcinoma cells. - Highlights: Black-Right-Pointing-Pointer Hybrid, dextran-iron oxide nanoparticles and thin films. Black-Right-Pointing-Pointer Laser immobilization. Black-Right-Pointing-Pointer Biocompatibility of dextran-iron oxide nanoparticles.

  18. The effects of aluminium and selenium supplementation on brain ...

    African Journals Online (AJOL)

    This in vivo study was designed to investigate the potential of aluminium (Al), in the absence of added iron, to participate in either antioxidant or pro-oxidant events. Some markers of oxidative stress were determined in liver and brain of rats exposed to aluminium lactate, either alone or in the presence of dietary supplements ...

  19. Sputtered boron indium oxide thin-film transistors

    Science.gov (United States)

    Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

    2017-11-01

    Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications. Sputtered BIO thin films exhibit an amorphous phase over a wide range of B2O3/In2O3 ratios and remain amorphous up to 500 °C. The band gap decreases linearly with decreasing boron content, whereas device performance generally improves with decreasing boron content. The best amorphous BIO TFT exhibits a field-effect mobility of 10 cm2 V-1 s-1, turn-on voltage of 2.5 V, and sub-threshold swing of 0.72 V/dec. Decreasing the boron content to 12.5% leads to a polycrystalline phase, but further increases the mobility up to 20-40 cm2 V-1 s-1. TCAD simulation results suggest that the reason for higher performance after increasing the anneal temperature from 200 to 400 °C is due to a lower defect density in the sub-bandgap region of the BIO channel layer.

  20. Metal-Oxide Film Conversions Involving Large Anions

    International Nuclear Information System (INIS)

    Pretty, S.; Zhang, X.; Shoesmith, D.W.; Wren, J.C.

    2008-01-01

    The main objective of my research is to establish the mechanism and kinetics of metal-oxide film conversions involving large anions (I - , Br - , S 2- ). Within a given group, the anions will provide insight on the effect of anion size on the film conversion, while comparison of Group 6 and Group 7 anions will provide insight on the effect of anion charge. This research has a range of industrial applications, for example, hazardous radioiodine can be immobilized by reaction with Ag to yield AgI. From the perspective of public safety, radioiodine is one of the most important fission products from the uranium fuel because of its large fuel inventory, high volatility, and radiological hazard. Additionally, because of its mobility, the gaseous iodine concentration is a critical parameter for safety assessment and post-accident management. A full kinetic analysis using electrochemical techniques has been performed on the conversion of Ag 2 O to (1) AgI and (2) AgBr. (authors)

  1. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    International Nuclear Information System (INIS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  2. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  3. Human exposure to aluminium.

    Science.gov (United States)

    Exley, Christopher

    2013-10-01

    Human activities have circumvented the efficient geochemical cycling of aluminium within the lithosphere and therewith opened a door, which was previously only ajar, onto the biotic cycle to instigate and promote the accumulation of aluminium in biota and especially humans. Neither these relatively recent activities nor the entry of aluminium into the living cycle are showing any signs of abating and it is thus now imperative that we understand as fully as possible how humans are exposed to aluminium and the future consequences of a burgeoning exposure and body burden. The aluminium age is upon us and there is now an urgent need to understand how to live safely and effectively with aluminium.

  4. Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Hyeonju Lee

    2016-10-01

    Full Text Available We report on the morphological influence of solution-processed zinc oxide (ZnO semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs. Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, and Hall measurement. It is shown that ZnO TFTs have a superior performance in terms of the threshold voltage and field-effect mobility, when ZnO crystallites are more densely packed in the film. This is attributed to lower electrical resistivity and higher Hall mobility in a densely packed ZnO film. In the results of consecutive TFT operations, a positive shift in the threshold voltage occurred irrespective of the film morphology, but the morphological influence on the variation in the field-effect mobility was evident. The field-effect mobility in TFTs having a densely packed ZnO film increased continuously during consecutive TFT operations, which is in contrast to the mobility decrease observed in the less packed case. An analysis of the field-effect conductivities ascribes these results to the difference in energetic traps, which originate from structural defects in the ZnO films. Consequently, the morphological influence of solution-processed ZnO films on the TFT performance can be understood through the packing property of ZnO crystallites.

  5. Oxidation behaviour of Ti2AIN films composed mainly of nanolaminated MAX phase.

    Science.gov (United States)

    Wang, Q M; Garkas, W; Renteria, A Flores; Leyens, C; Kim, K H

    2011-10-01

    In this paper, we reported the oxidation behaviour of Ti2AIN films on polycrystalline Al2O3 substrates. The Ti2AIN films composed mainly of nanolaminated MAX phase was obtained by first depositing Ti-Al-N films using reactive sputtering of two elemental Ti and Al targets in Ar/N2 atmosphere and subsequent vacuum annealing at 800 degrees C for 1 h. The Ti2AIN films exhibited excellent oxidation resistance and thermal stability at 600-900 degrees C in air. Very low mass gain was observed. At low temperature (600 degrees C), no oxide crystals were observed on film surface. Blade-like Theta-Al2O3 fine crystals formed on film surfaces at 700-800 degrees C. At high temperature (900 degrees C), firstly Theta-Al2O3 formed on film surface and then transformed into alpha-Al2O3. At 700-900 degrees C, a continuous Al2O3 layer formed on Ti2AIN films surface, acting as diffusion barrier preventing further oxidation attack. The mechanism of the excellent oxidation resistance of Ti2AIN films was discussed based on the experimental results.

  6. Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

    Science.gov (United States)

    Harunsyah; Yunus, M.; Fauzan, Reza

    2017-06-01

    This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on the additional of zinc oxide by 0.6% and plastilizer by 25%. Based on data of FTIR, the produced film plastic did not change the group function and it can be concluded that theinteraction in film plastic produced was only a physical interaction. Biodegradable plastic film based on cassava starch-zinc oxide and plasticizer glycerol showed that interesting mechanical properties being transparent, clear, homogeneous, flexible, and easily handled.

  7. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  8. The role of polymer films on the oxidation of magnetite nanoparticles

    Science.gov (United States)

    Letti, C. J.; Paterno, L. G.; Pereira-da-Silva, M. A.; Morais, P. C.; Soler, M. A. G.

    2017-02-01

    A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe3O4-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe3O4-np/PSS)n with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe3O4-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe3O4-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe3O4-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite.

  9. Polymer composite adsorbents using particles of molecularly imprinted polymers or aluminium oxide nanoparticles for treatment of arsenic contaminated waters.

    Science.gov (United States)

    Önnby, L; Pakade, V; Mattiasson, B; Kirsebom, H

    2012-09-01

    Removal of As(V) by adsorption from water solutions was studied using three different synthetic adsorbents. The adsorbents, (a) aluminium nanoparticles (Alu-NPs, polymers (polymer backbones of pure polyacrylamide (MIP-cryo) were of better stability than the amine containing polymer backbone (Alu-cryo). Both composites worked well in the studied pH range of pH 2-8. Adsorption tested in real wastewater spiked with arsenic showed that co-ions (nitrate, sulphate and phosphate) affected arsenic removal for Alu-cryo more than for MIP-cryo. Both composites still adsorbed well in the presence of counter-ions (copper and zinc) present at low concentrations (μg/l). The unchanged and selective adsorption in realistic water observed for MIP-cryo was concluded to be due to a successful imprinting, here controlled using a non-imprinted polymer (NIP). A development of MIP-cryo is needed, considering its low adsorption capacity. Copyright © 2012 Elsevier Ltd. All rights reserved.

  10. Design of the fuel element 'snow-flake' in uranium oxide, canned with aluminium, for the experimental reactor EL 3 (1960); Etude d'un element combustible en oxyde d'uranium gaine d'aluminium, type ''cristal de neige'' pour la pile EL 3 (1960)

    Energy Technology Data Exchange (ETDEWEB)

    Gauthron, M.; Guibert, B. [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires

    1960-07-01

    This report sums up the main studies have been carried out on the fuel element 'Snowflake' (uranium oxide, canned with aluminium), designed to replace the present element of the experimental reactor EL3 in order to increase the reactivity without modifying the neutron flux/thermal power ratio. (author) [French] Ce rapport resume les principales etudes qui ont ete faites sur l'element combustible 'Cristal de Neige' (a oxyde d'uranium, gaine d'aluminium) destine a remnlacer l'element actuel du reacteur experimental EL3, afin d'en augmenter la reactivite sans modifier le rapport flux neutronique-puissance thermique. (auteur)

  11. Organosilane-functionalization of nanostructured indium tin oxide films.

    Science.gov (United States)

    Pruna, R; Palacio, F; Martínez, M; Blázquez, O; Hernández, S; Garrido, B; López, M

    2016-12-06

    Fabrication and organosilane-functionalization and characterization of nanostructured ITO electrodes are reported. Nanostructured ITO electrodes were obtained by electron beam evaporation, and a subsequent annealing treatment was selectively performed to modify their crystalline state. An increase in geometrical surface area in comparison with thin-film electrodes area was observed by atomic force microscopy, implying higher electroactive surface area for nanostructured ITO electrodes and thus higher detection levels. To investigate the increase in detectability, chemical organosilane-functionalization of nanostructured ITO electrodes was performed. The formation of 3-glycidoxypropyltrimethoxysilane (GOPTS) layers was detected by X-ray photoelectron spectroscopy. As an indirect method to confirm the presence of organosilane molecules on the ITO substrates, cyclic voltammetry and electrochemical impedance spectroscopy (EIS) were also carried out. Cyclic voltammograms of functionalized ITO electrodes presented lower reduction-oxidation peak currents compared with non-functionalized ITO electrodes. These results demonstrate the presence of the epoxysilane coating on the ITO surface. EIS showed that organosilane-functionalized electrodes present higher polarization resistance, acting as an electronic barrier for the electron transfer between the conductive solution and the ITO electrode. The results of these electrochemical measurements, together with the significant difference in the X-ray spectra between bare ITO and organosilane-functionalized ITO substrates, may point to a new exploitable oxide-based nanostructured material for biosensing applications. As a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested in this work. Interestingly, oxide-based materials are highly integrable with the silicon chip technology, which would permit the easy adaptation of such sensors into lab

  12. Role of plasma activation in tailoring the nanostructure of multifunctional oxides thin films

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M.; Losurdo, Maria; Capezzuto, Pio [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, and Department of Chemistry, University of Bari, via Orabona, 4-70125 Bari (Italy)], E-mail: giovanni.bruno@ba.imip.cnr.it

    2009-03-01

    Potential of O{sub 2} remote plasmas for improving structural, morphological and optical properties of various multifunctional oxides thin films both during plasma assisted growth as well as by post-growth treatments is discussed. In particular, an O{sub 2} remote plasma metalorganic chemical vapor deposition (RP-MOCVD) route is presented for tailoring the structural, morphological and optical properties of Er{sub 2}O{sub 3} and ZnO films. Furthermore, post-growth room-temperature remote O{sub 2} plasma treatments of indium-tin-oxides (ITO) films are demonstrated to be effective in improving morphology of ITO films.

  13. Characteristics of tin oxide-based thin film transistors prepared by DC magnetron sputtering.

    Science.gov (United States)

    Moon, Yeon-Keon; Kim, Woong-Sun; Kim, Kyung-Taek; Shin, Se-Young; Park, Jong-Wan

    2012-04-01

    Here we demonstrate the fabrication of SnO(x) thin-film transistors (TFTs), where SnO(x) thin films are deposited as an active channel layer by DC magnetron sputtering. We analyzed the effects of the oxygen partial pressure ratio and post-deposition heat treatment (PDHT) on the characteristics of the SnO(x) thin films. We found improved performance of the TFTs obtained by using interface modification with the optimized deposition condition of SnO(x) thin films. These results are helpful for fabricating oxide-TFTs, including simple binary oxide semiconductors, as an active channel layer.

  14. Degradation of superconducting Nb/NbN films by atmospheric oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Wolfley, Steven L.; Young, Travis Ryan; Monson, Todd; Pearce, Charles Joseph; Lewis, Rupert M.; Clark, Blythe; Brunke, Lyle Brent; Missert, Nancy A.

    2017-03-01

    Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. As a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.

  15. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  16. Fiber remote and real time optoelectronic dosimetry based on the optically stimulated luminescence phenomenon: Development of sensors based on aluminium oxide doped with carbon for applications in personal dosimetry

    International Nuclear Information System (INIS)

    Ranchoux, G.

    2001-01-01

    An optical fiber sensor based on the use of classical technologies (optoelectronic, laser, optical fibers,...) can be connected to the Optically Stimulated Luminescence properties (or OSL) of the aluminium oxide doped with carbon in order to provide several new capabilities compared to usual dosimeters: remote dose measurements, quasi 'real time' dose measurements, applied to personal dosimetry thanks to a low fading level at room temperature. This thesis work shows the studies about: 1)the state of the art about dosimetry based on the aluminium oxide doped with carbon and its OSL properties (emission and stimulation spectra, glow curves, trap and recombination energy levels,...), 2)the state of the art about international standardization, not only, with regard to personal dosimetry (IEC 61066 Standard) but also to the description of operational quantities called personal dose equivalent H p (10) and H p (0,07), 3)the experimental development of a new sensor device based on aluminium oxide crystals (design, realization, tests,...), 4)the application of statistical Monte Carlo calculation methods (code MCNP4B) to the simulation of the sensor head in accordance with the IEC Standard 61066 with regard to the energy and angular response H p (10). (author) [fr

  17. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States); McGlone, J.M.; Landau, N.P.; Wager, J.F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 (United States); Stickle, W.F. [Hewlett-Packard Company, Corvallis, OR 97333 (United States); Herman, G.S., E-mail: greg.herman@oregonstate.edu [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States)

    2015-11-30

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni (< 30 min), and then by outward diffusion of Zr (> 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  18. Preparation, characterization and electrocatalytic behavior of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate hybrid film-modified electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Chu, H.-W.; Thangamuthu, R. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China); Chen, S.-M. [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan (China)], E-mail: smchen78@ms15.hinet.net

    2008-02-15

    Polynuclear mixed-valent hybrid films of zinc oxide/zinchexacyanoferrate and ruthenium oxide hexacyanoferrate (ZnO/ZnHCF-RuOHCF) have been deposited on electrode surfaces from H{sub 2}SO{sub 4} solution containing Zn(NO{sub 3}){sub 2}, RuCl{sub 3} and K{sub 3}[Fe(CN){sub 6}] by potentiodynamic cycling method. Simultaneous cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM) measurements demonstrate the steady growth of hybrid film. Surface morphology of hybrid film was investigated using scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) data confirm existence of zinc oxide and ruthenium oxide hexacyanoferrate (RuOHCF) in the hybrid film. The effect of type of monovalent cations on the redox behavior of hybrid film was investigated. In pure supporting electrolyte, electrochemical responses of Ru{sup II/III} redox transition occurring at negative potential region resemble with that of a surface immobilized redox couple. The electrocatalytic activity of ZnO/ZnHCF-RuOHCF hybrid film was investigated towards oxidation of epinephrine, dopamine and L-cysteine, and reduction of S{sub 2}O{sub 8}{sup 2-} and SO{sub 5}{sup 2-} as well as IO{sub 3}{sup -} using cyclic voltammetry and rotating ring disc electrode (RRDE) techniques.

  19. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    Science.gov (United States)

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...publication is available at http://dx.doi.org/10.1016/j.optmat.2014.08.005 14. ABSTRACT Hafnium oxide (HfO2) films were grown by sputter-deposition by

  20. Oxide Ceramic Films Grown on 60 Nitinol for NASA and Department of Defense Applications

    Science.gov (United States)

    Miyoshi, Kazuhisa; Street, Kenneth W.; Lukco, Dorothy; Cytron, Sheldon J.

    2005-01-01

    Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

  1. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  2. Oxygen–induced barrier height changes in aluminium – amorphous ...

    African Journals Online (AJOL)

    Se) films by exposing the samples to oxygen before the aluminium contacts were deposited. Current – voltage (I-V) measurements were carried out on the samples. The results show that the application of voltage causes charge exchange ...

  3. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  4. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  5. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  6. Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenchao [School of Science, Tianjin University, Tianjin (China); Wang, Zhipeng [School of Science, Tianjin University, Tianjin (China); School of Chemical Engineering, Tianjin University, Tianjin (China); Liu, Yu; Li, Nan [School of Science, Tianjin University, Tianjin (China); Wang, Wei [School of Chemical Engineering, Tianjin University, Tianjin (China); Gao, Jianping, E-mail: jianpingg@eyou.com [School of Chemical Engineering, Tianjin University, Tianjin (China)

    2012-09-15

    Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

  7. Low Temperature Constrained Sintering of Cerium Gadolinium OxideFilms for Solid Oxide Fuel Cell Applications

    Energy Technology Data Exchange (ETDEWEB)

    Nicholas, Jason Dale [Univ. of California, Berkeley, CA (United States)

    2007-01-01

    Cerium gadolinium oxide (CGO) has been identified as an acceptable solid oxide fuel cell (SOFC) electrolyte at temperatures (500-700 C) where cheap, rigid, stainless steel interconnect substrates can be used. Unfortunately, both the high sintering temperature of pure CGO, >1200 C, and the fact that constraint during sintering often results in cracked, low density ceramic films, have complicated development of metal supported CGO SOFCs. The aim of this work was to find new sintering aids for Ce0.9Gd0.1O1.95, and to evaluate whether they could be used to produce dense, constrained Ce0.9Gd0.1O1.95 films at temperatures below 1000 C. To find the optimal sintering aid, Ce0.9Gd0.1O1.95 was doped with a variety of elements, of which lithium was found to be the most effective. Dilatometric studies indicated that by doping CGO with 3mol% lithium nitrate, it was possible to sinter pellets to a relative density of 98.5% at 800 C--a full one hundred degrees below the previous low temperature sintering record for CGO. Further, it was also found that a sintering aid's effectiveness could be explained in terms of its size, charge and high temperature mobility. A closer examination of lithium doped Ce0.9Gd0.1O1.95 indicated that lithium affects sintering by producing a Li2O-Gd2O3-CeO2 liquid at the CGO grain boundaries. Due to this liquid phase sintering, it was possible to produce dense, crack-free constrained films of CGO at the record low temperature of 950 C using cheap, colloidal spray deposition processes. This is the first time dense constrained CGO films have been produced below 1000 C and could help commercialize metal supported ceria based solid oxide fuel cells.

  8. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  9. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  10. Composition and corrosion properties of high-temperature oxide films on steel type 18-10

    International Nuclear Information System (INIS)

    Vakulenko, B.F.; Morozov, O.N.; Chernysheva, M.V.

    1985-01-01

    The composition and propeties of oxide films, formed in the process of tube production of steel type 18-10, as well as the behaviour of the steels coated with oxide films under operating conditions of NPP heat-exchange equipment at the 20-300 deg C temperatures are determined. It is found, that the films have a good adhesion to the steel surface and repeat the metal structure without interfering with, the surface defect determination. Introduction of the NaNO 2 corrosion inhibitor decreases the film destruction rate to the level of the base metal corrosion. It is found acceptable to use tubes of steel 18-10 coated with dense oxide films in the heat-exchange and water supply systems of NPP

  11. Assembly of tantalum porous films with graded oxidation profile from size-selected nanoparticles

    Science.gov (United States)

    Singh, Vidyadhar; Grammatikopoulos, Panagiotis; Cassidy, Cathal; Benelmekki, Maria; Bohra, Murtaza; Hawash, Zafer; Baughman, Kenneth W.; Sowwan, Mukhles

    2014-05-01

    Functionally graded materials offer a way to improve the physical and chemical properties of thin films and coatings for different applications in the nanotechnology and biomedical fields. In this work, design and assembly of nanoporous tantalum films with a graded oxidation profile perpendicular to the substrate surface are reported. These nanoporous films are composed of size-selected, amorphous tantalum nanoparticles, deposited using a gas-aggregated magnetron sputtering system, and oxidized after coalescence, as samples evolve from mono- to multi-layered structures. Molecular dynamics computer simulations shed light on atomistic mechanisms of nanoparticle coalescence, which govern the films porosity. Aberration-corrected (S) TEM, GIXRD, AFM, SEM, and XPS were employed to study the morphology, phase and oxidation profiles of the tantalum nanoparticles, and the resultant films.

  12. Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization

    Energy Technology Data Exchange (ETDEWEB)

    Martinson, Alex B.; Kim, In Soo

    2017-09-26

    A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.

  13. RBS and NRA of cobalt oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Andrade, E.; Huerta, L.; Pineda, J.C.; Zavala, E.P.; Barrera, E.; Rocha, M. F.; Vargas, C.A.

    2001-01-01

    This work presents a study of cobalt oxide thin films produced by the sol-gel process on aluminum and glass substrates. These films have been analyzed using two ion beam analysis (IBA) techniques: a) a standard RBS 4 He 2 MeV and b) nuclear reaction analysis (NRA) using a 1 MeV deuterium beam. The 12 C(d,p 0 ) 13 C nuclear reaction provides information that carbon is incorporated into the film structure, which could be associated to the sinterization film process. Other film measurements such as optical properties, XRD, and SEM were performed in order to complement the IBA analysis. The results show that cobalt oxide film coatings prepared by this technique have good optical properties as solar absorbers and potential uses in solar energy applications

  14. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  15. Oxidized potato starch based thermoplastic films : Effect of combination of hydrophilic and amphiphilic plasticizers

    NARCIS (Netherlands)

    Niazi, Muhammad Bilal Khan; Broekhuis, Antonius A.

    Different combinations of hydrophilic (glycerol and water) and amphiphilic (isoleucine) plasticizers were studied in the production of thermoplastic starch (TPS) powders and films from oxidized potato starch. All powder samples had an irregular and shrivelled morphology. In all mixtures containing

  16. Preparation of polyvinyl alcohol graphene oxide phosphonate film and research of thermal stability and mechanical properties.

    Science.gov (United States)

    Li, Jihui; Song, Yunna; Ma, Zheng; Li, Ning; Niu, Shuai; Li, Yongshen

    2018-05-01

    In this article, flake graphite, nitric acid, peroxyacetic acid and phosphoric acid are used to prepare graphene oxide phosphonic and phosphinic acids (GOPAs), and GOPAs and polyvinyl alcohol (PVA) are used to synthesize polyvinyl alcohol graphene oxide phosphonate and phosphinate (PVAGOPs) in the case of faint acidity and ultrasound irradiation, and PVAGOPs are used to fabricate PVAGOPs film, and the structure and morphology of GOPAs, PVAGOPs and PVAGOPs film are characterized, and the thermal stability and mechanical properties of PVAGOPs film are investigated. Based on these, it has been proved that GOPAs consist of graphene oxide phosphonic acid and graphene oxide phosphinic acid, and there are CP covalent bonds between them, and PVAGOPs are composed of GOPAs and PVA, and there are six-member lactone rings between GOPAs and PVA, and the thermal stability and mechanical properties of PVAGOPs film are improved effectively. Copyright © 2018 Elsevier B.V. All rights reserved.

  17. Low Temperature, High Energy Density Micro Thin Film Solid Oxide Fuel Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A new type of solid oxide fuel cell based on thin film technology and ultra-thin electrolyte is being proposed to develop to realize major reductions in fuel cell...

  18. Hard X-ray photoemission spectroscopy of transition-metal oxide thin films and interfaces

    International Nuclear Information System (INIS)

    Wadati, H.; Fujimori, A.

    2013-01-01

    Highlights: •Photoemission spectroscopy is a powerful technique to study the electronic structures of transition-metal oxides. •Hard X-ray photoemission spectroscopy (HXPES) is a new type of photoemission spectroscopy which can probe bulk states. •HXPES is very suitable for studying oxide thin films such as the composition dependence and the film thickness dependence. -- Abstract: Photoemission spectroscopy is a powerful experimental technique to study the electronic structures of solids, especially of transition-metal oxides. Recently, hard X-ray photoemission spectroscopy (HXPES) has emerged as a more relevant experimental technique to obtain clear information about bulk states. Here, we describe how HXPES can be conveniently applied to study the interesting subjects on oxide thin films such as the composition dependence and the film thickness dependence of the electronic structures and the interfacial electronic structure of multilayers

  19. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  20. Optical and electrical characterizations of cerium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Fu-Chien; Lai, Chih-Ming, E-mail: fcchiu@mail.mcu.edu.t [Department of Electronic Engineering, Ming Chuan University, No. 5, De Ming Rd., Gui Shan District, Taoyuan County 333, Taiwan (China)

    2010-02-24

    The optical dielectric function of cerium oxide (CeO{sub 2}) was characterized by the spectroscopic ellipsometry (SE) technique using the Kramers-Kronig relation and the Tauc-Lorentz (TL) dispersion model. Experimental results showed that the bandgap energy and refractive index at 632.8 nm of CeO{sub 2} are about 3.23 {+-} 0.05 eV and 2.33 {+-} 0.08, respectively. Based on the optical properties, the electrical conduction mechanisms in CeO{sub 2} thin films are determined to be Schottky emission in a medium electric field (0.5-1.6 MV cm{sup -1}) from 350 to 500 K and Poole-Frenkel emission in a high electric field (>2.36 MV cm{sup -1}) from 450 to 500 K. Accordingly, the conduction band offsets between Al and CeO{sub 2} and the trap energy level are about 0.62 {+-} 0.01 eV and 1.53 {+-} 0.01 eV, respectively.

  1. Mesoscopic Iron-Oxide Nanorod Polymer Nanocomposite Films

    Science.gov (United States)

    Ferrier, Robert; Ohno, Kohji; Composto, Russell

    2012-02-01

    Dispersion of nanostructures in polymer matrices is required in order to take advantage of the unique properties of the nano-sized filler. This work investigates the dispersion of mesoscopic (200 nm long) iron-oxide rods (FeNRs) grafted with poly(methyl methacrylate) (PMMA) brushes having molecular weights (MWs) of 3.7K, 32K and 160K. These rods were then dispersed in either a poly(methyl methacrylate) or poly(oxyethylene) (PEO) matrix film so that the matrix/brush interaction is either entropic (PMMA matrix) or enthalpic and entropic (PEO matrix). Transmission electron microscopy (TEM) was used to determine the dispersion of the FeNRs in the polymer matrix. The results show that the FeNRs with the largest brush were always dispersed in the matrix, whereas the rods with the shorter brushes always aggregated in the matrix. This suggests that the brush MW is a critical parameter to achieve dispersion of these mesoscopic materials. This work can be extended to understand the dispersion of other types of mesocopic particles

  2. Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion

    DEFF Research Database (Denmark)

    Wickman, B.; da Silva Fanta, Alice Bastos; Burrows, Andrew

    2017-01-01

    Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes...... considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation...

  3. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Vesel, Alenka, E-mail: alenka.vesel@guest.arnes.si [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Mozetic, Miran [Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia); Balat-Pichelin, Marianne [PROMES-CNRS Laboratory, 7 Rue du four solaire, 66120 Font Romeu Odeillo (France)

    2016-11-30

    Highlights: • Oxidized Inconel alloy was exposed to hydrogen at temperatures up to 1500 K. • Oxide reduction in hydrogen plasma started at approximately 1300 K. • AES depth profiling revealed complete reduction of oxides in plasma. • Oxides were not reduced, if the sample was heated just in hydrogen atmosphere. • Surface of reduced Inconel preserved the same composition as the bulk material. - Abstract: Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  4. Bioinspired, Ultrastrong, Highly Biocompatible, and Bioactive Natural Polymer/Graphene Oxide Nanocomposite Films.

    Science.gov (United States)

    Zhu, Wen-Kun; Cong, Huai-Ping; Yao, Hong-Bin; Mao, Li-Bo; Asiri, Abdullah M; Alamry, Khalid A; Marwani, Hadi M; Yu, Shu-Hong

    2015-09-09

    Tough and biocompatible nanocomposite films: A new type of bioinspired ultrastrong, highly biocompatible, and bioactive konjac glucomannan (KGM)/graphene oxide (GO) nanocomposite film is fabricated on a large scale by a simple solution-casting method. Such KGM-GO composite films exhibit much enhanced mechanical properties under the strong hydrogen-bonding interactions, showing great potential in the fields of tissue engineering and food package. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Electrical properties of vacuum-annealed titanium-doped indium oxide films

    NARCIS (Netherlands)

    Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

  6. Nanomechanical properties of dip coated indium tin oxide films on glass

    International Nuclear Information System (INIS)

    Biswas, Nilormi; Ghosh, Priyanka; Sarkar, Saswati; Moitra, Debabrata; Biswas, Prasanta Kumar; Jana, Sunirmal; Mukhopadhyay, Anoop Kumar

    2015-01-01

    Nanomechanical properties of indium tin oxide (ITO) thin films dip coated from precursor sols of varying equivalent oxide weight percentage (wt.%) onto commercial soda lime silica (SLS) glass substrate were evaluated by nanoindentation technique at an ultralow load of 50 μN. It was found that the increase in wt.% beyond 6 in the precursor sols, had an adverse effect on nanohardness and Young's modulus of the films. Moreover, relatively thicker triple layered film (about 240 nm) had inferior nanomechanical properties as compared to the single layered film. Interestingly, the ITO foam coating on SLS glass substrate had nanomechanical properties nearly as good as those of the single layered films. These observations are explained in terms of the relative differences in crystallinity, stiffness and elastic deformation ability of the films. - Highlights: • Sol–gel indium tin oxide thin films and foam coating • Crystallinity and nanomechanical property inversely relate to sol oxide content. • Foam coating behaves like the thin films

  7. Study of optical characteristics of tin oxide thin film prepared by sol ...

    Indian Academy of Sciences (India)

    Abstract. In this paper, we present details of preparation of tin oxide (SnO2) thin film by sol–gel process. The film was synthesized on a glass (Corning 7059) plate by dip coating method. Here, we used tin (II) chloride as precursor and methanol as solvent. Optical characteristics and physical properties like refractive index, ...

  8. Localized Control of Curie Temperature in Perovskite Oxide Film by Capping-layer- induced Octahedral Distortion

    NARCIS (Netherlands)

    Thomas, S.; Kuiper, B.; Hu, J.; Smit, J.; Liao, Z.; Zhong, Z.; Rijnders, G.; Vailionis, A.; Wu, R.; Koster, G.; Xia, J.

    2017-01-01

    With reduced dimensionality, it is often easier to modify the properties of ultra-thin films than their bulk counterparts. Strain engineering, usually achieved by choosing appropriate substrates, has been proven effective in controlling the properties of perovskite oxide films. An emerging

  9. Raman and XPS characterization of vanadium oxide thin films with temperature

    Science.gov (United States)

    Ureña-Begara, Ferran; Crunteanu, Aurelian; Raskin, Jean-Pierre

    2017-05-01

    The oxidation mechanisms and the numerous phase transitions undergone by VO2 thin films deposited on SiO2/Si and Al2O3 substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO2 monoclinic phase at R.T. and the final V2O5 phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO2 films prepared on SiO2/Si and Al2O3 substrates.

  10. Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Wolf, R.M.; Giesbers, J.B.; Blom, P.W.M.; Grosse Holz, K.O.; Pastoor, E.

    The combination of a variety of oxidic thin films in two materials systems is described. The first one focuses on the growth of BaZrO3 on SrTiO3 (both perovskites) and the use of these stacks as a substrate for the growth of magnetic ferrite spinel films. The second system shows the combination of

  11. Gas-chromism in ultrasonic spray pyrolyzed tungsten oxide thin films

    Indian Academy of Sciences (India)

    A simple and inexpensive ultrasonic spray pyrolysis (USP) technique has been employed to deposit tungsten oxide (WO3) thin films by spraying 2.0 mM aqueous ammonium metatungstate solution onto the amorphous glass substrates kept at 250°C. The films were further annealed at 400°C for 4 h in air. X-ray diffraction ...

  12. Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

    OpenAIRE

    Henley, SJ; Carey, JD; Silva, SRP

    2005-01-01

    he mechanisms controlling the nanostructuring of thin metal-on-oxide films by nanosecond pulsed excimer lasers are investigated. When permitted by the interfacial energetics, the breakup of the metal film into nanoscale islands is observed. A range of metals (Au, Ag, Mo, Ni, Ti, and Zn) with differing physical and thermodynamic properties, and differing tendencies for oxide formation, are investigated. The nature of the interfacial metal-substrate interaction, the thermal conductivity of the ...

  13. Thin film bismuth iron oxides useful for piezoelectric devices

    Science.gov (United States)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  14. Characterization of quaternary metal oxide films by synchrotron x-ray fluorescence microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Perry, D.L.; Thompson, A.C.; Russo, R.E. [Ernest Orlando Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    A high demand for thin films in industrial technology has been responsible for the creation of new techniques for the fabrication of such films. One highly effective method for the syntheses of variable composition thin films is pulsed-laser deposition (PLD). The technique has a large number of characteristics which make it an attractive approach for making films. It offers rapid deposition rates, congruent material transfer, simple target requirements from which to make the films, in situ multilayer deposition, and no gas composition or pressure requirements. Additionally, the technique can also afford crystalline films and films with novel structures. Pulsed-laser deposition can be used to make films of semiconductors, insulators, high-temperature superconductors, diamond-like films, and piezoelectric materials. Quaternary metal oxides involving calcium, nickel, and potassium have been shown to be quite effective in the catalysis of coal gasification and methane coupling. One approach to incorporating all three of the metal oxides into one phase is the use of laser ablation to prepare films of the catalysts so that they may be used for coatings, smooth surfaces on which to conduct detailed studies of gas-solid interface reactions that are involved in catalytic processes, and other applications. The problem of dissimilar boiling points of the three metal oxides system is overcome, since the laser ablation process effects the volatilization of all three components from the laser target essentially simultaneously. There is strong interest in gaining an understanding of the chemical and morphological aspects of the films that are deposited. Phenomena such as lattice defects and chemical heterogeneity are of interest. The experimental data discussed here are restricted to the matrix homogeneity of the films themselves for films which were void of microparticles.

  15. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  16. Aluminium in Biological Environments: A Computational Approach

    Science.gov (United States)

    Mujika, Jon I; Rezabal, Elixabete; Mercero, Jose M; Ruipérez, Fernando; Costa, Dominique; Ugalde, Jesus M; Lopez, Xabier

    2014-01-01

    The increased availability of aluminium in biological environments, due to human intervention in the last century, raises concerns on the effects that this so far “excluded from biology” metal might have on living organisms. Consequently, the bioinorganic chemistry of aluminium has emerged as a very active field of research. This review will focus on our contributions to this field, based on computational studies that can yield an understanding of the aluminum biochemistry at a molecular level. Aluminium can interact and be stabilized in biological environments by complexing with both low molecular mass chelants and high molecular mass peptides. The speciation of the metal is, nonetheless, dictated by the hydrolytic species dominant in each case and which vary according to the pH condition of the medium. In blood, citrate and serum transferrin are identified as the main low molecular mass and high molecular mass molecules interacting with aluminium. The complexation of aluminium to citrate and the subsequent changes exerted on the deprotonation pathways of its tritable groups will be discussed along with the mechanisms for the intake and release of aluminium in serum transferrin at two pH conditions, physiological neutral and endosomatic acidic. Aluminium can substitute other metals, in particular magnesium, in protein buried sites and trigger conformational disorder and alteration of the protonation states of the protein's sidechains. A detailed account of the interaction of aluminium with proteic sidechains will be given. Finally, it will be described how alumnium can exert oxidative stress by stabilizing superoxide radicals either as mononuclear aluminium or clustered in boehmite. The possibility of promotion of Fenton reaction, and production of hydroxyl radicals will also be discussed. PMID:24757505

  17. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A

    2002-11-30

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrol onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  18. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A.

    2002-01-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  19. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Science.gov (United States)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J. P.; Hakam, A.; Ennaoui, A.

    2002-11-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM).

  20. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  1. Structural, optical and electrical characteristics of nickel oxide thin films synthesised through chemical processing method

    Science.gov (United States)

    Akinkuade, Shadrach; Mwankemwa, Benanrd; Nel, Jacqueline; Meyer, Walter

    2018-04-01

    A simple and cheap chemical deposition method was used to produce a nickel oxide (NiO) thin film on glass substrates from a solution that contained Ni2+ and monoethanolamine. Thermal treatment of the film at temperatures above 350 °C for 1 h caused decomposition of the nickel hydroxide into nickel oxide. Structural, optical and electrical properties of the film were studied using X-ray diffraction (XRD), spectrophotometry, current-voltage measurements and scanning electron microscopy (SEM). The film was found to be polycrystalline with interplanar spacing of 0.241 nm, 0.208 nm and 0.148 nm for (111), (200) and (220) planes respectively, the lattice constant a was found to be 0.417 nm. The film had a porous surface morphology, formed from a network of nanowalls of average thickness of 66.67 nm and 52.00 nm for as-deposited and annealed films respectively. Transmittance of visible light by the as-deposited film was higher and the absorption edge of the film blue-shifted after annealing. The optical band gap of the annealed film was 3.8 eV. Electrical resistivity of the film was 378 Ωm.

  2. Transparent thin films of indium tin oxide: Morphology-optical investigations, inter dependence analyzes

    Science.gov (United States)

    Prepelita, P.; Filipescu, M.; Stavarache, I.; Garoi, F.; Craciun, D.

    2017-12-01

    Using a fast and eco-friendly deposition method, ITO thin films with different thicknesses (0.5 μm-0.7 μm) were deposited on glass substrates by radio frequency magnetron sputtering technique. A comparative analysis of these oxide films was then carried out. AFM investigations showed that the deposited films were smooth, uniform and having a surface roughness smaller than 10 nm. X-ray diffraction investigations showed that all samples were polycrystalline and the grain sizes of the films, corresponding to (222) cubic reflection, were found to increase with the increasing film thickness. The optical properties, evaluated by UV-VIS-NIR (190-3000 nm) spectrophotometer, evidenced that the obtained thin films were highly transparent, with a transmission coefficient between 90 and 96%, depending on the film thickness. Various methods (Swanepoel and Drude) were employed to appreciate the optimal behaviour of transparent oxide films, in determining the dielectric optical parameters and refractive index dispersion for ITO films exhibiting interference patterns in the optical transmission spectra. The electrical conductivity also increased as the film thickness increased.

  3. Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

    Science.gov (United States)

    Kuo, Chil-Chyuan

    2011-07-01

    Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=-3.6483 x+2.1409, the surface roughness of AZO thin films ( y) can be directly deduced from the peak power density ( x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.

  4. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  5. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  6. Solid-phase electrochemical reduction of graphene oxide films in alkaline solution.

    Science.gov (United States)

    Basirun, Wan J; Sookhakian, Mehran; Baradaran, Saeid; Mahmoudian, Mohammad R; Ebadi, Mehdi

    2013-09-24

    Graphene oxide (GO) film was evaporated onto graphite and used as an electrode to produce electrochemically reduced graphene oxide (ERGO) films by electrochemical reduction in 6 M KOH solution through voltammetric cycling. Fourier transformed infrared and Raman spectroscopy confirmed the presence of ERGO. Electrochemical impedance spectroscopy characterization of ERGO and GO films in ferrocyanide/ferricyanide redox couple with 0.1 M KCl supporting electrolyte gave results that are in accordance with previous reports. Based on the EIS results, ERGO shows higher capacitance and lower charge transfer resistance compared to GO.

  7. DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A; Aceves-Mijares, M [INAOE, Electronics Department, Apartado 51, Puebla, 72000 (Mexico); Barreto, J; DomInguez, C [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Peralvarez, M; Garrido, B [EME, Departament d' Electronica, Universitat de Barcelona, MartI i Franques 1, 08028 Barcelona (Spain); Luna-Lopez, J A, E-mail: amorales@inaoep.mx [CIDS-BUAP, Apartado 1651, Puebla, Pue, 72000 (Mexico)

    2010-02-26

    Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 deg. C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths-across the SRO film- has been proposed to explain the EL behaviour in these devices.

  8. Comparative study of highly dense aluminium- and gallium-doped ...

    Indian Academy of Sciences (India)

    Administrator

    cause of their optoelectronic properties in addition to low cost, high stability and excellent surface uniformity (low roughness). Doping zinc oxide with some elements like aluminium, gallium, boron, niobium and indium has a great impact for having enhancements of its optical and electrical properties. Aluminium and gallium ...

  9. Physiochemical Characterization of Iodine (V Oxide Part II: Morphology and Crystal Structure of Particulate Films

    Directory of Open Access Journals (Sweden)

    Brian K. Little

    2015-11-01

    Full Text Available In this study, the production of particulate films of iodine (V oxides is investigated. The influence that sonication and solvation of suspended particles in various alcohol/ketone/ester solvents have on the physical structure of spin or drop cast films is examined in detail with electron microscopy, powder x-ray diffraction, and UV-visible absorption spectroscopy. Results indicate that sonicating iodine oxides in alcohol mixtures containing trace amounts of water decreases deposited particle sizes and produces a more uniform film morphology. UV-visible spectra of the pre-cast suspensions reveal that for some solvents, the iodine oxide oxidizes the solvent, producing I2 and lowering the pH of the suspension. Characterizing the crystals within the cast films reveal their composition to be primarily HI3O8, their orientations to exhibit a preferential orientation, and their growth to be primarily along the ac-plane of the crystal, enhanced at higher spin rates. Spin-coating at lower spin rates produces laminate-like particulate films versus higher density, one-piece films of stacked particles produced by drop casting. The particle morphology in these films consists of a combination of rods, plates, cubes, and rhombohedra structure.

  10. Effect of Pro-Degradation Additive on Photo-Oxidative Aging of Polypropylene Film

    International Nuclear Information System (INIS)

    Noor Zalikha Mohamed Islam; Nadras Othman; Zulkifli Ahmad; Hanafi Ismail

    2011-01-01

    This paper describes the effect of pro-degradation additives (PDA) on photo-oxidative aging of polypropylene (PP) films after being time accelerated in UV-weathering chamber. Thin films (0.12 mm) containing these additives were prepared by sheeting process. The effect of UV on PP films in the presence of these additives was investigated. Changes in the PP films appearance, tensile properties and carbonyl index (CI) were used to investigate the degradation behavior. The films became completely pulverised after 100 h of photo-oxidative treatment and could not be tested further. Films containing PDA showed rapid loss in tensile properties within 100 h of photo-oxidative aging. In addition, the CI results of photo-oxidative films increased with increasing PDA amount within the time interval of aging and the activity was due to the mechanism reaction of PP with PDA particles. During the aging process the material becomes denser due to tighter packing and incorporation of oxygen into the amorphous regions of the polymer. The results indicated that the presence of PDA contributed to the photo degradation and the activity was very much influenced by the amount PDA. (author)

  11. Effect of annealing on pulse laser deposition grown copper oxide thin film

    Science.gov (United States)

    Mistry, Vaibhavi H.; Mistry, Bhaumik V.; Modi, B. P.; Joshi, U. S.

    2017-05-01

    Cuprous oxide (Cu2O) is a promising non-toxic and low cost semiconductor with potential applications in photovoltaic devices and sensor applications. Copper oxide thin films were prepared on glass substrate by pulse laser deposition. The effects of annealing on the structural, optical and electrical properties of copper oxide thin films were studied. The films were annealed in air for different temperature ranging from 200 to 450 °C. X-ray diffraction patterns reveals that the films as-deposited and annealed at 200 and 250 °C are of cuprite structure with composition Cu2O. Annealing at 300 °C and above converts these films to CuO phase. The atomic force microscopy results show that both the phase has nanocrystalline and particle size of the films is increasing with increase in annealing temperature. The conversion from Cu2O to CuO phase was confirmed by a shift in the optical band gap from 2.20 eV to 1.74 eV. The annealing conditions play a major role in the structural properties of copper oxide thin films.

  12. Highly Sensitive and Fast Response Colorimetric Humidity Sensors Based on Graphene Oxides Film.

    Science.gov (United States)

    Chi, Hong; Liu, Yan Jun; Wang, FuKe; He, Chaobin

    2015-09-16

    Uniform graphene oxide (GO) film for optical humidity sensing was fabricated by dip-coating technique. The resulting GO thin film shows linear optical shifts in the visible range with increase of humidity in the whole relative humidity range (from dry state to 98%). Moreover, GO films exhibit ultrafast sensing to moisture within 250 ms because of the unique atomic thinness and superpermeability of GO sheets. The humidity sensing mechanism was investigated using XRD and computer simulation. The ultrasensitive humidity colorimetric properties of GOs film may enable many potential applications such as disposable humidity sensors for packaging, health, and environmental monitoring.

  13. Rapid deposition process for zinc oxide film applications in pyroelectric devices

    International Nuclear Information System (INIS)

    Hsiao, Chun-Ching; Yu, Shih-Yuan

    2012-01-01

    Aerosol deposition (AD) is a rapid process for the deposition of films. Zinc oxide is a low toxicity and environmentally friendly material, and it possesses properties such as semiconductivity, pyroelectricity and piezoelectricity without the poling process. Therefore, AD is used to accelerate the manufacturing process for applications of ZnO films in pyroelectric devices. Increasing the temperature variation rate in pyroelectric films is a useful method for enhancing the responsivity of pyroelectric devices. In the present study, a porous ZnO film possessing the properties of large heat absorption and high temperature variation rate is successfully produced by the AD rapid process and laser annealing for application in pyroelectric devices. (paper)

  14. Structural and optical properties of zinc oxide film using RF-sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Hashim, A. J.; Jaafar, M. S.; Ghazai, Alaa J. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Pinang (Malaysia); Physics Department, Science College, Thi-Qar University (Iraq)

    2012-11-27

    This paper reports the fabrication of zinc oxide (ZnO) film using RF-sputtering technique. Determination of the structural properties using High Resolution X-ray Diffraction (HRXRD) confirmed that ZnO film deposited on silicon (Si) substrate has a high quality. This result is in line with the Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) which were used to image the morphology of the film, in which a rough surface was demonstrated. Photoluminescence (PL) emission is included to study the optical properties of ZnO film that shows two PL peak in the UV region at 371 nm and in visible region at 530 nm respectively.

  15. Opto-electronic properties of bismuth oxide films presenting different crystallographic phases

    Energy Technology Data Exchange (ETDEWEB)

    Gomez, Celia L. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Depablos-Rivera, Osmary, E-mail: osmarydep@yahoo.com [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Unidad de Posgrado, Edificio C, Piso 1, Zona Cultural de CU, México, D.F. 04510 (Mexico); Silva-Bermudez, Phaedra [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Instituto Nacional de Rehabilitación, Calz. México Xochimilco No. 289 Col. Arenal de Guadalupe, C.P.14389, Ciudad de México, D.F. (Mexico); Muhl, Stephen [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico); Zeinert, Andreas; Lejeune, Michael; Charvet, Stephane; Barroy, Pierre [Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens Cedex 1 (France); Camps, Enrique [Instituto Nacional de Investigaciones Nucleares, Carretera México-Toluca S/N, kilómetro 36.5. La Marquesa, Municipio de Ocoyoacac, CP 52750, Estado de México (Mexico); Rodil, Sandra E. [Instituto de Investigaciones en Materiales, UNAM, Circuito Exterior s/n CU, México D.F. 04510 (Mexico)

    2015-03-02

    The optical, electrical and structural properties of bismuth oxide thin films deposited by radio frequency reactive magnetron sputtering were studied. The Bi{sub 2}O{sub 3} thin films were grown on Si and glass substrates under different power and substrate temperatures in an oxygen-enriched plasma leading to films with different crystalline phase as evidenced by X-ray diffraction and Raman spectroscopy. The optical properties of the films were measured using ellipsometric spectroscopy and optical transmission spectra. In order to parameterize the optical dispersion functions (n, k) of the films, the Tauc–Lorentz dispersion model was used. The optical bandgap was then assessed by different methods and the results are compared to the thermal variations of the electrical resistivity of the films. It was found that the refractive index, extinction coefficient and optical gap strongly depend on the deposition conditions and the crystalline phase; the fluorite defect cubic δ-Bi{sub 2}O{sub 3} phase showed the lowest optical gap and lower resistivity. - Highlights: • Different bismuth oxide phases were obtained by sputtering. • The power and substrate temperature were the two key parameters. • Room temperature delta-Bi{sub 2}O{sub 3} thin films were obtained. • The optical bandgap was around 1.5 and 2.2 eV, depending on the phase. • The bismuth oxide films presented activation energies around 1 eV.

  16. Preparo de filmes-suporte para microscópio eletrônico

    Directory of Open Access Journals (Sweden)

    Eduardo Penna-Franca

    1952-03-01

    Full Text Available Working with low voltage microscope (R.C.A., EMC-2, of 30KV. the authors verified that parlodion and Formvar films are quickly destroyed by intense heating under the electron beam. They have tried to employ oxide films, as Al2O3 and SiO, more resistant to heat. Al2O3 films are prepared by anodic oxidation of thin aluminium sheets, under 8 to 10 volts in a 3% ammonium citrate solution and subsequent aluminium dissolution in a O.25% HgCl2 solution. These films are very suitable when prepared with highly pure aluminium of extremely homogeneous surface. Best results were obtained with SiO films, evaporated in high vacuum over Parlodion films mounted on metallic grids. Employing 1 or 1.5 mg of SiOm highly homogeneous and resistant films are obtained, having little inferior transparence than the Parlodion ones. Pure SiO films (1.5 mg are obtained by elimination of the Parlodion under slow heating until 250°C; they are greatly transparent but little resistant to water, thus beeing indicated in dry preparations. For particles which deposite in a chain-like form around thin fibers, the authors employ the mounting on Parlodion fibers, obtained by heating Parlodion films on microscope grids about 190°C.

  17. Stabilization of ultrathin (hydroxy)oxide films on transition metal substrates for electrochemical energy conversion

    Science.gov (United States)

    Zeng, Zhenhua; Chang, Kee-Chul; Kubal, Joseph; Markovic, Nenad M.; Greeley, Jeffrey

    2017-06-01

    Design of cost-effective electrocatalysts with enhanced stability and activity is of paramount importance for the next generation of energy conversion systems, including fuel cells and electrolysers. However, electrocatalytic materials generally improve one of these properties at the expense of the other. Here, using density functional theory calculations and electrochemical surface science measurements, we explore atomic-level features of ultrathin (hydroxy)oxide films on transition metal substrates and demonstrate that these films exhibit both excellent stability and activity for electrocatalytic applications. The films adopt structures with stabilities that significantly exceed bulk Pourbaix limits, including stoichiometries not found in bulk and properties that are tunable by controlling voltage, film composition, and substrate identity. Using nickel (hydroxy)oxide/Pt(111) as an example, we further show how the films enhance activity for hydrogen evolution through a bifunctional effect. The results suggest design principles for this class of electrocatalysts with simultaneously enhanced stability and activity for energy conversion.

  18. Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

    International Nuclear Information System (INIS)

    Prater, Walter L.; Allen, Emily L.; Lee, Wen-Y.; Toney, Michael F.; Daniels, Jonathan; Hedstrom, Jonathan A.

    2004-01-01

    We report on the electrical resistance and microstructure of sputter deposited copper thin films grown in an oxygen containing ion-beam sputtering atmosphere. For films thinner than 5 nm, 6%-10% oxygen causes a minimum in film resistivity, while for thicker films, there is a monotonic increase in resistivity. X-ray reflectivity measurements show significantly smoother films for these oxygen flow rates. X-ray diffraction shows that the oxygen doping causes a refinement of the copper grain size and the formation of cuprous oxide. We suggest that the formation of cuprous oxide limits copper grain growth, which causes smoother interfaces, and thus reduces resistivity by increasing specular scattering of electrons at interfaces

  19. Semiconducting properties of oxide films formed onto an Nb electrode in NaOH solutions

    Directory of Open Access Journals (Sweden)

    VLADIMIR D. JOVIC

    2008-03-01

    Full Text Available In this paper, the results of the potentiostatic formation of homogeneous and heterogeneous, nano-crystalline passive films of Nb2O5 onto an Nb electrode in NaOH solutions of different concentrations at potentials lower than 3.0 V vs. SCE are presented. The semiconducting properties of such films were investigated by EIS measurements. After fitting the EIS results by appropriate equivalent circuits, the space charge capacitance (Csc and space charge resistance (Rsc of these films were determined. The donor density (Nsc, flat band potential (Efb and thickness of the space charge layer (dsc for such oxide films were determined from the corresponding Mott–Schottky (M–S plots. It is shown that all oxide films were n-type semiconductors in a certain potential range.

  20. Graphene oxide on magnetron sputtered silver thin films for SERS and metamaterial applications

    Science.gov (United States)

    Politano, Grazia Giuseppina; Cazzanelli, Enzo; Versace, Carlo; Vena, Carlo; De Santo, Maria Penelope; Castriota, Marco; Ciuchi, Federica; Bartolino, Roberto

    2018-01-01

    In the last years the potential of combining the attractive materials characteristics of graphene related materials and silver nanostructures for SERS and metamaterials has emerged. Here, we report of graphene oxide thin films deposited by dip-coating on magnetron sputtered silver thin films. Our work represents a novelty in the field of the study of graphene oxide- silver composites, since magnetron sputtering deposition is an alternative way to silver thin films fabrication; previous works used instead silver nitrate aqueous solution mixed with the graphene oxide. Micro-Raman technique, morphological analysis and variable angle spectroscopic ellipsometry were performed. The final SERS signal intensity was investigated and we found Raman peaks dependent on the intensity of the laser and the thickness of silver and GO films. These results could open somestudies on plasmonics and on the reduction of graphene oxide mediated by silver thin films. Moreover, effective medium theory calculations show the possible use of these graphene oxide/silver thin films in multilayer hyperbolic metamaterials for optical applications.

  1. Environment-dependent photochromism of silver nanoparticles interfaced with metal-oxide films

    International Nuclear Information System (INIS)

    Fu, Shencheng; Sun, Shiyu; Zhang, Xintong; Zhang, Cen; Zhao, Xiaoning; Liu, Yichun

    2015-01-01

    Graphical abstract: - Highlights: • We prepared silver/mental-oxide nanocomposite films by physical sputtering technology to investigate the environment-dependent photo-dissolution of silver nanoparticles. • We built up an airtight and in situ monitorable system to measure photochromism of different films in various atmospheres. • Silver nanoparticles were found to be more easily photo-dissolved on the n-type metal oxide films compared with that on the p-type one, conductor and insulator. • Oxygen and humidity were verified to accelerate the photochromism of silver nanoparticles. - Abstract: Different metal-oxide films were fabricated by radio frequency magnetron sputtering. Further, a layer of silver nanoparticles (NPs) was deposited on the surface of the substrate by physical sputtering. Photochromism of the silver/metal-oxide nanocomposite films were investigated in situ under the irradiation of a linearly-polarized green laser beam (532 nm). Silver NPs were found to be easily photo-dissolved on the n-type metal-oxide films. By changing experimental conditions, it was also verified that both oxygen and humidity accelerate the photochromism of silver NPs. The corresponding micro-mechanism on charge separation and Ag + -ions mobility was also discussed. These results provided theoretical basis for the application of silver NPs in biological, chemical and medical areas.

  2. Temperature-dependent phase evolution of copper-oxide thin-films on Au(111).

    Science.gov (United States)

    Möller, Christoph; Fedderwitz, Hanna; Noguera, Claudine; Goniakowski, Jacek; Nilius, Niklas

    2018-02-21

    The formation of ultrathin copper oxide layers on an Au(111) surface is explored with scanning tunneling microscopy and density functional theory. Depending on the thermal treatment of as-grown Cu-O samples, a variety of thin-film morphologies is observed. Whereas 1D oxide stripes with Au[112[combining macron

  3. Oxidation and biodegradation of polyethylene films containing pro-oxidantadditives: Synergistic effects of sunlight exposure, thermal aging and fungal biodegradation

    Science.gov (United States)

    Synergistic effects of sunlight exposure, thermal aging and fungal biodegradation on the oxidation and biodegradation of linear low density poly (ethylene) PE-LLD films containing pro-oxidant were examined. To achieve oxidation and degradation, films were first exposed to the sunlight for 93 days du...

  4. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  5. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition.

    Science.gov (United States)

    Waltz, Florian; Schwarz, Hans-Christoph; Schneider, Andreas M; Eiden, Stefanie; Behrens, Peter

    2015-01-01

    In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  6. Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

    Directory of Open Access Journals (Sweden)

    Florian Waltz

    2015-03-01

    Full Text Available In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps, a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step. In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

  7. The growth and evolution of thin oxide films on delta-plutonium surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Flores, Harry G [Los Alamos National Laboratory; Pugmire, David L [Los Alamos National Laboratory

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  8. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  9. Investigation of thermal oxidative break-down of polyethylene films modified with grafted polyacrylonitrile

    International Nuclear Information System (INIS)

    Krul', L.P.; Gert, E.V.

    1981-01-01

    Thermal oxidative destruction of polyethylene (PE) films modified by radiation (#betta#-radiation, dose rate is 0.56 Mrad/hr) liquid-phase graft polymerization of acrylonitrile (AN) has been studied. Comparative stability of grafted copolymers, homopolymers and mechanical mixtures of PE and PAN (polyacrylonitrile) to thermal oxidative destruction is studied using the derivatographic method. It is shown that graft of PAN considerably decelerates the development of oxidative and destructive processes in PE, at that, the efficiency of PE chain stabilization increases with the increase of grafted PAN amount. The sample with PAN content x=0.367 (in parts of the mass of grafted film) possesses the highest stability

  10. A review on the recent developments of solution processes for oxide thin film transistors

    Science.gov (United States)

    Du Ahn, Byung; Jeon, Hye-Ji; Sheng, Jiazhen; Park, Jozeph; Park, Jin-Seong

    2015-06-01

    This review article introduces the recent advances in the development of oxide semiconductor materials based on solution processes and their potential applications. In the early stage, thin film transistors based on oxide semiconductors fabricated by solution processes used to face critical problems such as high annealing temperatures (>400 °C) required to obtain reasonable film quality, and the relatively low field effect mobility (biosensors, and non-volatile memory devices. As such, further innovations in the solution process methods of oxide semiconductor devices are anticipated to allow the realization of cost effective, large area electronics in the near future.

  11. XPS and SEM studies of chromium oxide films chemically formed on stainless steel 316 L

    International Nuclear Information System (INIS)

    Stefanov, P.; Marinova, T.

    2000-01-01

    The structure and composition of chromium oxide films formed on stainless steel by immersion in a chromium electrolyte have been studied by SEM and XPS. Cr 2 O 3 crystallites in the range 30-150 nm are fully developed and cover the whole surface. The chemical composition in the depth and the thickness of the oxide layer have been determined by XPS sputter profiles. The oxide film can be described within the framework of a double layer consisting of a thin outer hydrated layer and an inner layer of Cr 2 O 3 . (orig.)

  12. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    International Nuclear Information System (INIS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei Wei; Jin Chunming; Narayan, Roger J.

    2009-01-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices

  13. The effect of hydrogen peroxide on uranium oxide films on 316L stainless steel

    Science.gov (United States)

    Wilbraham, Richard J.; Boxall, Colin; Goddard, David T.; Taylor, Robin J.; Woodbury, Simon E.

    2015-09-01

    For the first time the effect of hydrogen peroxide on the dissolution of electrodeposited uranium oxide films on 316L stainless steel planchets (acting as simulant uranium-contaminated metal surfaces) has been studied. Analysis of the H2O2-mediated film dissolution processes via open circuit potentiometry, alpha counting and SEM/EDX imaging has shown that in near-neutral solutions of pH 6.1 and at [H2O2] ⩽ 100 μmol dm-3 the electrodeposited uranium oxide layer is freely dissolving, the associated rate of film dissolution being significantly increased over leaching of similar films in pH 6.1 peroxide-free water. At H2O2 concentrations between 1 mmol dm-3 and 0.1 mol dm-3, formation of an insoluble studtite product layer occurs at the surface of the uranium oxide film. In analogy to corrosion processes on common metal substrates such as steel, the studtite layer effectively passivates the underlying uranium oxide layer against subsequent dissolution. Finally, at [H2O2] > 0.1 mol dm-3 the uranium oxide film, again in analogy to common corrosion processes, behaves as if in a transpassive state and begins to dissolve. This transition from passive to transpassive behaviour in the effect of peroxide concentration on UO2 films has not hitherto been observed or explored, either in terms of corrosion processes or otherwise. Through consideration of thermodynamic solubility product and complex formation constant data, we attribute the transition to the formation of soluble uranyl-peroxide complexes under mildly alkaline, high [H2O2] conditions - a conclusion that has implications for the design of both acid minimal, metal ion oxidant-free decontamination strategies with low secondary waste arisings, and single step processes for spent nuclear fuel dissolution such as the Carbonate-based Oxidative Leaching (COL) process.

  14. Surface chemistry and cytotoxicity of reactively sputtered tantalum oxide films on NiTi plates

    Energy Technology Data Exchange (ETDEWEB)

    McNamara, K. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Kolaj-Robin, O.; Belochapkine, S.; Laffir, F. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Gandhi, A.A. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Tofail, S.A.M., E-mail: tofail.syed@ul.ie [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland)

    2015-08-31

    NiTi, an equiatomic alloy containing nickel and titanium, exhibits unique properties such as shape memory effect and superelasticity. NiTi also forms a spontaneous protective titanium dioxide (TiO{sub 2}) layer that allows its use in biomedical applications. Despite the widely perceived biocompatibility there remain some concerns about the sustainability of the alloy's biocompatibility due to the defects in the TiO{sub 2} protective layer and the presence of high amount of sub-surface Ni, which can give allergic reactions. Many surface treatments have been investigated to try to improve both the corrosion resistance and biocompatibility of this layer. For such purposes, we have sputter deposited tantalum (Ta) oxide thin films onto the surface of the NiTi alloy. Despite being one of the promising metals for biomedical applications, Ta, and its various oxides and their interactions with cells have received relatively less attention. The oxidation chemistry, crystal structure, morphology and biocompatibility of these films have been investigated. In general, reactive sputtering especially in the presence of a low oxygen mixture yields a thicker film with better control of the film quality. The sputtering power influenced the surface oxidation states of Ta. Both microscopic and quantitative cytotoxicity measurements show that Ta films on NiTi are biocompatible with little to no variation in cytotoxic response when the surface oxidation state of Ta changes. - Highlights: • Reactive sputtering in low oxygen mixture yields thicker better quality films. • Sputtering power influenced surface oxidation states of Ta. • Cytotoxicity measurements show Ta films on NiTi are biocompatible. • Little to no variation in cytotoxic response when oxidation state changes.

  15. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical va- pour deposition using an adducted β-diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (~ 550°C), while they grow with a strong (111) orientation as the.

  16. Conductance of perovskite oxide thin films and interfaces

    NARCIS (Netherlands)

    Mubeen Dildar, Ishrat

    2013-01-01

    This thesis deals with the properties of doped perovskite manganites in the form of thin films, and with interfaces between insulating perovskites. The first question we investigate has to do with the strong reduction of the metal-insulator (MI) transition temperature when the films are strained.In

  17. Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion.

    Science.gov (United States)

    Wickman, B; Bastos Fanta, A; Burrows, A; Hellman, A; Wagner, J B; Iandolo, B

    2017-01-16

    Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation. These films show the largest average grain size and the highest charge carrier density, as determined from electron microscopy and impedance spectroscopy analysis. We believe that the fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance.

  18. The role of polymer films on the oxidation of magnetite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Letti, C.J. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Paterno, L.G. [Universidade de Brasilia, Instituto de Quimica, 70910-000 Brasilia, DF (Brazil); Pereira-da-Silva, M.A. [Instituto de Fisica de São Carlos, USP, 13560-9700 São Carlos, SP (Brazil); Centro Universitario Central Paulista – UNICEP, 13563-470 São Carlos, SP (Brazil); Morais, P.C. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Soler, M.A.G., E-mail: soler@unb.br [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil)

    2017-02-15

    A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.

  19. Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

    Directory of Open Access Journals (Sweden)

    Badrul Munir

    2013-04-01

    Full Text Available Indium tin oxide (ITO films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222  to (400 and (440, as well as higher  surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10-4 Ω•cm was obtained at 750 nm film thickness. The films’ resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices. 

  20. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  1. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications.

    Science.gov (United States)

    Mendoza, J Guzmán; Frutis, M A Aguilar; Flores, G Alarcón; Hipólito, M García; Maciel Cerda, A; Azorín Nieto, J; Montalvo, T Rivera; Falcony, C

    2010-01-01

    Hafnium oxide (HfO(2)) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 degrees C. For substrate temperatures lower than 400 degrees C the deposited films were amorphous, while for substrate temperatures higher than 450 degrees C, the monoclinic phase of HfO(2) appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO(2), with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown. Copyright 2009 Elsevier Ltd. All rights reserved.

  2. Synthesis and characterization of hafnium oxide films for thermo and photoluminescence applications

    International Nuclear Information System (INIS)

    Guzman Mendoza, J.; Aguilar Frutis, M.A.; Flores, G. Alarcon; Garcia Hipolito, M.; Maciel Cerda, A.; Azorin Nieto, J.; Rivera Montalvo, T.; Falcony, C.

    2010-01-01

    Hafnium oxide (HfO 2 ) films were deposited by the ultrasonic spray pyrolysis process. The films were synthesized from hafnium chloride as raw material in deionized water as solvent and were deposited on corning glass substrates at temperatures from 300 to 600 deg. C. For substrate temperatures lower than 400 deg. C the deposited films were amorphous, while for substrate temperatures higher than 450 deg. C, the monoclinic phase of HfO 2 appeared. Scanning electron microscopy showed that the film's surface resulted rough with semi-spherical promontories. The films showed a chemical composition close to HfO 2 , with an Hf/O ratio of about 0.5. UV radiation was used in order to achieve the thermoluminescent characterization of the films; the 240 nm wavelength induced the best response. In addition, preliminary photoluminescence spectra, as a function of the deposition temperatures, are shown.

  3. Optical, structural and electrical properties of nanosized zinc oxide sintered films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Kumar V.

    2013-01-01

    Full Text Available Zinc oxide films have been deposited on ultra-clean glass substrates by screenprinting method followed by sintering process. Optimum conditions for preparing good quality screen-printed films have been found. The optical band gap of the films has been studied using reflection spectra in wavelength range 325-600 nm by using double beam spectrophotometer. X-ray diffraction studies revealed that the films are polycrystalline in nature, single phase exhibiting wurtzite (hexagonal structure with strong preferential orientation of grains along the (101 direction. Surface morphology of films has been studied by scanning electron microscopy (SEM technique. The electrical resistivity of the films was measured in vacuum by two probe technique. PACS: 78.20.Ci; 78.50.Ge; 78.66.-w; 78.66.Hf.

  4. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  5. Characterization of Semolina Protein Film with Incorporated Zinc Oxide Nano Rod Intended for Food Packaging

    Directory of Open Access Journals (Sweden)

    Jafarzadeh Shima

    2017-09-01

    Full Text Available This study intended to provide biopolymer films used as food packaging, which will result in reducing environmental pollution produced by the activities of synthetic food packaging. We used zinc oxide nanorods (ZnO-nr and we prepared nanocomposite films by means of solvent casting. FTIR and SEM were employed to characterize the final films. SEM images revealed that ZnO-nr particles were homogenously distributed throughout the film surface. The thermal, optical, and heat sealability properties of the films were also examined. Adding ZnO-nr significantly reduced oxygen permeability and heat sealability. The semolina films’ UV absorbance was highly impacted by the degree of ZnO-nr addition. The nanocomposite films absorbed above 90% of the near infrared spectra. In addition, the zeta potential revealed the surface charge of ZnO-nr had a negative charge of about −33.9 mV.

  6. Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria

    2004-05-01

    Spectroscopic ellipsometry is used to study the optical properties of nanostructured semiconductor oxide thin films. Various examples of models for the dielectric function, based on Lorentzian oscillators combined with the Drude model, are given based on the band structure of the analyzed oxide. With this approach, the optical properties of thin films are determined independent of the dielectric functions of the corresponding bulk materials, and correlation between the optical properties and nanostructure of thin films is investigated. In particular, in order to discuss the dependence of optical constants on grain size, CeO{sub 2} nanostructured films are considered and parameterized by two-Lorentzian oscillators or two-Tauc-Lorentz model depending on the nanostructure and oxygen deficiency. The correlation among anisotropy, crystalline fraction and optical properties parameterized by a four-Lorentz oscillator model is discussed for nanocrystalline V{sub 2}O{sub 5} thin films. Indium tin oxide thin films are discussed as an example of the presence of graded optical properties related to interfacial reactivity activated by processing conditions. Finally, the example of ZnO shows the potential of ellipsometry in discerning crystal and epitaxial film polarity through the analysis of spectra and the detection of surface reactivity of the two polar faces, i.e. Zn-polarity and O-polarity.

  7. Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

    Directory of Open Access Journals (Sweden)

    Ruijin Hong

    2017-01-01

    Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

  8. In-Line Sputtered Gallium and Aluminum Codoped Zinc Oxide Films for Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available Gallium and aluminum codoped zinc oxide (GAZO films were deposited at different temperatures by in-line sputtering. Aluminum is thermally unstable compared to other elements in GAZO films. The grains of GAZO films increase with deposition temperature. Coalescence between grains was observed for GAZO films deposited at 250°C. The deposition temperature exhibits positive influence on crystallinity, and electrical and optical properties of GAZO films. The carrier concentration and mobility of GAZO films increase, while the electrical resistivity of GAZO films decreases with deposition temperature. The average optical transmittance of GAZO films rises with deposition temperature. In-line sputtering demonstrates a potential method with simplicity, mass production, and large-area deposition to produce GAZO films with good electrical and optical quality. The electrical resistivity of 4.3 × 10−4 Ω cm and the average optical transmittance in the visible range from 400 to 800 nm of 92% can be obtained for GAZO films deposited at 250°C. The hybrid organic solar cells (OSC were fabricated on GAZO-coated glass substrates. Blended poly(3-hexylthiophene (P3HT and [6,6]-phenyl C61 butyric acid methyl ester (PCBM were the photoactive materials in OSC. The power conversion efficiency of OSC is 0.65% for the OSC with the 250°C deposited GAZO electrode.

  9. Durability of resin cement bond to aluminium oxide and zirconia ceramics after air abrasion and laser treatment.

    Science.gov (United States)

    Foxton, Richard M; Cavalcanti, Andrea N; Nakajima, Masatoshi; Pilecki, Peter; Sherriff, Martyn; Melo, Luciana; Watson, Timothy F

    2011-02-01

    The erbium laser has been introduced for cutting enamel and dentin and may have an application in the surface modification of high-strength aluminum oxide and zirconia ceramics. The aim of this study was to evaluate the durability of the bond of conventional dual-cured resin cements to Procera Al(2)O(3) and zirconium oxide ceramics after surface treatment with air abrasion and erbium laser. One hundred twenty Al(2)O(3) and 120 zirconia specimens measuring 3 × 3 × 0.7 mm(3) were divided equally into three groups, and their surfaces treated as follows: either untreated (controls), air abraded with Al(2)O(3) particles, or erbium-laser-treated at a power setting of 200 mJ. The surface of each specimen was then primed and bonded with one of two dual-cured resin cements (either SCP-100 Ceramic Primer and NAC-100 or Monobond S and Variolink II) using a 1-mm thick Tygon tube mold with a 0.75-mm internal bore diameter. After 24 hours and 6 months of water storage at 37°C, a microshear bond strength test was performed at a crosshead speed of 1 mm/min. Surface morphology was examined using a confocal microscope, and failure modes were observed using an optical microscope. The data were analyzed using the Kaplan-Meier nonparametric survival analysis. In the case of zirconia, air abrasion and Erbium:yttrium-aluminum-garnet (Er:YAG) laser treatment of the ceramic surface resulted in a significant reduction in the bond strengths of both resin cements after 6 months water storage; however, when the zirconia surface was left untreated, the SCP-100/NAC-100 group did not significantly reduce in bond strength. In the case of alumina, no treatment, air abrasion and Er:YAG laser treatment of the surface led to no significant reduction in the bond strengths of the three SCP-100/NAC-100 groups after 6 months water storage, whereas all three Monobond S/Variolink II groups showed a significant reduction. Er:YAG laser treatment of the zirconia surface did not result in a durable resin

  10. Oxidation/reduction studies on nanoporous platinum films by electrical resistance measurements

    Science.gov (United States)

    Zhu, Liangzhu; Kapoor, Siddharth; Parry, Quintin; Nahata, Ajay; Virkar, Anil V.

    2014-12-01

    Mechanisms and kinetics of surface reactions in nanoporous platinum films were investigated. Nanoporous films of platinum of ∼250 nm thickness were deposited on glass slides by co-sputtering Pt and carbon followed by subsequently burning off carbon in air at 450 °C. Electrical resistance was measured in air and in 10% H2 + nitrogen at 80 °C as a function of time. The change in electrical resistance was extremely fast when switched to the H2 + N2 atmosphere. When switched to air, the film resistance increased with time at a much slower rate. The increase in resistance in air was attributed to the formation of Pt-oxide on the internal surfaces of the nanoporous films. The kinetics of oxidation was described by a model which includes two surface kinetic steps and a diffusional step. The use of nanoporous films makes it possible to investigate mechanisms and kinetics of surface reactions by ensuring a large surface to volume ratio. Oxide scale thickness at 80 °C in air after several hours of oxidation was only sub-monolayer. Oxide scale thickness after 3 h at 450 °C was about 1 nm. Implications of the results for proton exchange membrane fuel cell (PEMFC) Pt catalyst degradation are discussed.

  11. Electrosprayed metal oxide semiconductor films for sensitive and selective detection of hydrogen sulfide.

    Science.gov (United States)

    Ghimbeu, Camelia Matei; Lumbreras, Martine; Schoonman, Joop; Siadat, Maryam

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H(2)S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of R(air)/R(gas) is given by Cu-SnO(2) films (2500) followed by WO(3) (1200) and In(2)O(3) (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO(2)) or oxidizing (NO(2)) gases.

  12. Synthesis of Bismuth Oxide Thin Films Deposited by Reactive Magnetron Sputtering

    International Nuclear Information System (INIS)

    Iljinas, A.; Burinskas, S.; Dudonis, J.

    2011-01-01

    In this work Bi 2 O 3 thin films were deposited onto the Si (111) and soda lime glass substrates by the reactive direct current magnetron sputtering system using pure Bi as a sputtering target. The dependences of electro-optical characteristics of the films on the substrate type and temperature were investigated. Transmittance and reflectance of the Bi 2 O 3 films were measured with ultraviolet and visible light spectrometer. It was found that the substrate temperature during deposition has a very strong influence on the phase components of thin films. The results indicate that the direct allowed transitions dominate in the films obtained in this work. For the direct allowed transitions the band gap energy is found to be about 1.98 eV and 2.2 eV. The reflectance of thin bismuth oxide film depends on the substrate. Small transparency of thin films grown on glass is more related to large reflectance than absorption. The reflectance spectra of the bismuth oxide thin films deposited on the Si substrates show higher quality of optical characteristics compared to the samples deposited on glass substrates. (author)

  13. Thermochromic properties of vanadium oxide films prepared by dc reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cui Haining [College of Physics, JiLin University, 2519 JieFangDaLu Road, 130021 ChangChun (China); Centro de Fisica e Departamento de Fisica, Universidade do Minho, 4710 Braga (Portugal)], E-mail: hncui@yahoo.co; Teixeira, Vasco [Centro de Fisica e Departamento de Fisica, Universidade do Minho, 4710 Braga (Portugal); Meng Lijian [Centro de Fisica e Departamento de Fisica, Universidade do Minho, 4710 Braga (Portugal); Departamento de Fisica, Instituto Superior de Engenharia do Porto, Rua de Sao Tome, 4200 Porto (Portugal); Wang Rong; Gao Jinyue [College of Physics, JiLin University, 2519 JieFangDaLu Road, 130021 ChangChun (China); Fortunato, Elvira [Dept. Ciencia dos Materiais, CENIMAT, Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa, PT-2829-516 Caparica (Portugal)

    2008-02-15

    A transparent vanadium oxide film has been one of the most studied electrochromic (EC) and Thermochromic (TC) materials. Vanadium oxide films were deposited at different substrate temperatures up to 400 deg. C and different ratios of the oxygen partial pressure (P{sub O2}). SEM, AFM and X-ray diffraction's results show detail structure data of the films. IR mode assignments of the films measured by IR reflection-absorbance in NGIA (near grazing incidence angle) are given. It is found that the film has V{sub 2}O{sub 5} and VO{sub 2} combined structures. The films exhibit clear changes in transmittance when the environment temperature (T{sub e}) is varied, especially in the 3600-4000 cm{sup -1} range. Applying a T{sub e} that is higher than a critical temperature (T{sub c}) to the samples, the as-RT (room temperature) deposited film with 9% P{sub O2} has a transmittance variation of 30%, but the films that were deposited on a heated substrate of 400 deg. C have little variation. There is tendency of bigger variation in transmittance for the sample deposited at a larger P{sub O2}, when it is applied by 200 deg. C T{sub e}.

  14. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  15. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-07-01

    Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

  16. Tin etching from metallic and oxidized scandium thin films

    NARCIS (Netherlands)

    Pachecka, Malgorzata; Lee, Christopher James; Sturm, J.M.; Bijkerk, Frederik

    The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show

  17. Effects of PbO on the oxide films of incoloy 800HT in simulated primary circuit of PWR

    International Nuclear Information System (INIS)

    Tan, Yu; Yang, Junhan; Wang, Wanwan; Shi, Rongxue; Liang, Kexin; Zhang, Shenghan

    2016-01-01

    Effects of trace PbO on oxide films of Incoloy 800HT were investigated in simulated primary circuit water chemistry of PWR, also with proper Co addition. The trace PbO addition in high temperature water blocked the protective spinel oxides formation of the oxide films of Incoloy 800HT. XPS results indicated that the lead, added as PbO into the high temperature water, shows not only +2 valance but also +4 and 0 valances in the oxide film of 800HT co-operated with Fe, Cr and Ni to form oxides films. Potentiodynamic polarization results indicated that as PbO concentration increased, the current densities of the less protective oxide films of Incoloy 800HT decreased in a buffer solution tested at room temperature. The capacitance results indicated that the donor densities of oxidation film of Incoloy 800HT decreased as trace PbO addition into the high temperature water. - Highlights: • Trace PbO addition into the high temperature water block the formation of spinel oxides on Incoloy 800HT. • The donor density of oxide film decreases with trace PbO addition. • The current density of potentiodynamic polarization decreases of oxide film with trace PbO addition.

  18. Neutron Detection Utilizing Gadolinium Doped Hafnium Oxide Films

    National Research Council Canada - National Science Library

    Blasy, Bryan D

    2008-01-01

    ... retains monoclinic local symmetery for all levels of doping. Current as a function of voltage experiments identified the films as having poor diode characteristics with high leakage current in the forward bias region...

  19. Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

    Energy Technology Data Exchange (ETDEWEB)

    Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

    2017-01-15

    Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

  20. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Unknown

    Lousa A, Gimeno S and Marti J 1994 Vacuum 45 1143. Lou J C, Lin M S, Chyi J I and Shieh J H 1983 Thin Solid. Films 106 163. Melsheimer J and Tesche B 1986 Thin Solid Films 138 71. Minami Tadatsugu, Hidehito, Hidechito Nanto and Takata. Shinzo 1988 Jap. J. Appl. Phys. 27 L-28. Nomura K, Ujihira Y and Sharma ...

  1. Sinterability and conductivity of barium doped aluminium lanthanum oxyapatite La{sub 9.5}Ba{sub 0.5}Si{sub 5.5}Al{sub 0.5}O{sub 26.5} electrolyte of solid oxide fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Cao Xiaoguo [Faculty of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong (China); Jiang Sanping, E-mail: s.jiang@curtin.edu.au [Fuels and Energy Technology Institute and Department of Chemical Engineering, Curtin University, Perth, WA 6102 (Australia)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Ba doping enhances the sintering and densification properties of aluminium lanthanum apatite. Black-Right-Pointing-Pointer Ba doping improves the oxide conductivity of aluminium lanthanum apatite. Black-Right-Pointing-Pointer The enhancement of Ba doping is mainly due to the significantly reduced grain boundary resistance of the aluminium lanthanum apatite. - Abstract: Apatite ceramics are interesting alternative solid oxide fuel cells (SOFCs) electrolytes because of their open structure for the transportation of oxide ions and their good chemical stability. This study reports the influence of barium doping on the microstructure, sinterability and oxide conductivity properties of the aluminium lanthanum oxyapatite La{sub 9.5}Ba{sub 0.5}Si{sub 5.5}Al{sub 0.5}O{sub 26.5}. SEM results show that lanthanum substitution with barium improves the sinterability of apatite ceramics. The barium doping also enhances the conductivity of the aluminium lanthanum silicates. The oxygen ion conductivity of La{sub 9.5}Ba{sub 0.5}Si{sub 5.5}Al{sub 0.5}O{sub 26.5} sintered at 1600 Degree-Sign C is 2.21 Multiplication-Sign 10{sup -2} S cm{sup -1} at 800 Degree-Sign C, higher than 9.81 Multiplication-Sign 10{sup -3} S cm{sup -1} of La{sub 10}Si{sub 5}AlO{sub 26.5} sample prepared under the same conditions. The results in the present study demonstrate that doping Ba on the La site for aluminium lanthanum oxyapatite reduces the sintering temperature and improves the ion conductivity. The enhancement of Ba dopant is mainly on the improvement of the densification and thus substantially reduced grain boundary resistance of aluminium lanthanum oxyapatite particularly at low temperatures.

  2. Influence of silver nanoparticles on titanium oxide and nitrogen doped titanium oxide thin films for sun light photocatalysis

    Science.gov (United States)

    Madhavi, V.; Kondaiah, P.; Mohan Rao, G.

    2018-04-01

    Decreasing recombination of photogenerated charge carriers in photocatalysts is a critical issue for enhancing the efficiency of dye degradation. It is one of the greatest challenges to reduce the recombination of photo generated charge carriers in semiconductor. In this paper, we report that there is an enhancement of photocatalytic activity in presence of Sun light, by introducing Plasmon (silver nanoparticles (Ag)) onto the titanium oxide (TiO2) and nitrogen incorporated titanium oxide (N-TiO2) films. These silver nanoparticles facilitate the charge transport and separation of charge carriers. In this paper we find that the phase transformation accurse from rutile to anatase with increase of nitrogen flow rates. The FE-SEM analysis showed the micro structure changes to dense columnar growth with increase of nitrogen flow rates. XPS studies of the N-TiO2 thin films revealed that the substitution of N atoms within the O sites plays a crucial role in narrowing the band gap of the TiO2. This enables the absorption of visible light radiation and leads to operation of the film as a highly reactive and effective photocatalysis. The synergetic effect of silver nanoparticles on TiO2 and N-TiO2 films tailored the photocatalytic acitivity, charge transfer mechanism, and photocurrent studies. The silver nanoparticle loaded N-TiO2 films showed highest degradation of 95% compare to the N-TiO2 films. The photo degradation rate constant of Ag/N-TiO2 film was larger than the N-TiO2 films.

  3. Tin etching from metallic and oxidized scandium thin films

    Directory of Open Access Journals (Sweden)

    M. Pachecka

    2017-08-01

    Full Text Available The role of oxide on Sn adhesion to Sc surfaces was studied with in-situ ellipsometry, X-ray photoelectron spectroscopy and secondary electron microscopy. Sn etching with hydrogen radicals was performed on metallic Sc, metallic Sc with a native oxide, and a fully oxidized Sc layer. The results show that Sn adsorbs rather weakly to a non-oxidized Sc surface, and is etched relatively easily by atomic hydrogen. In contrast, the presence of native oxide on Sc allows Sn to adsorb more strongly to the surface, slowing the etching. Furthermore, thinner layers of scandium oxide result in weaker Sn adsorption, indicating that the layer beneath the oxide plays a significant role in determining the adsorption strength. Unexpectedly, for Sn on Sc2O3, and, to a lesser extent, for Sn on Sc, the etch rate shows a variation over time, which is explained by surface restructuring, temperature change, and hydrogen adsorption saturation.

  4. Fabrication of transparent cellulose acetate/graphene oxide nanocomposite film for UV shielding

    Energy Technology Data Exchange (ETDEWEB)

    Jahan, Nusrat; Khan, Wasi, E-mail: wasiamu@gmail.com; Azam, Ameer; Naqvi, A. H. [Department of Applied Physics, Z.H. College of Engineering & Technology, Aligarh Muslim University, Aligarh - 202002 (India)

    2016-05-23

    In this work, we have fabricated transparent cellulose acetate/graphene oxide nanocomposite (CAGONC) films for ultraviolet radiations (UVR) shielding. Graphene oxide (GO) was synthesized by modified Hummer’s method and CAGONC films were fabricated by solvent casting method. The films were analyzed using characterization techniques like x-ray diffraction (XRD), energy dispersive x-ray (EDX) equipped scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy and ultra-violet visible (UV-VIS) spectroscopy. Four films were prepared by varying the wt% of GO (0.1wt%, 0.2wt% and 0.3wt%) with respect to cellulose acetate (CA). UV-vis measurements exhibit optical transparency in the range of 76-99% for visible light while ultra-violet radiation was substantially shielded.

  5. Synthesis of nanocrystalline α-Fe2O3 by using thermal oxidation of Fe Films

    Science.gov (United States)

    Fortas, G.; Saidoun, I.; Abboud, H.; Gabouze, N.; Haine, N.; Manseri, A.; Zergoug, M.; Menari, H.; Sam, S.; Cheraga, H.; Bozetine, I.

    2018-03-01

    α-Fe2O3 hematite films were prepared by thermal oxidation from Fe films electroplated on silicon. Electrodeposition of Fe thin films was carried out from a sulfate bath containing an ammonium chloride complexing agent. The electrochemical study was performed by cyclic voltammetry. The SEM analysis of the films obtained at a -1.3 V constant polarization shows dendritic grains in the form of islet. The DRX spectra exhibit characteristic iron peaks according to the face centered cubic (Fcc) structure. These samples were annealed. At a temperature of 650 ° C, a single iron oxide phase was well formed, with the hematite structure. The SEM photos show a well-assembled columnar structure with formation of nanowires at the surface of the deposit. The absorbance spectra reveal an absorption features in the ultraviolet range

  6. Participation of the Third Order Optical Nonlinearities in Nanostructured Silver Doped Zinc Oxide Thin Solid Films

    Directory of Open Access Journals (Sweden)

    C. Torres-Torres

    2012-01-01

    Full Text Available We report the transmittance modulation of optical signals in a nanocomposite integrated by two different silver doped zinc oxide thin solid films. An ultrasonic spray pyrolysis approach was employed for the preparation of the samples. Measurements of the third-order nonlinear optical response at a nonresonant 532 nm wavelength of excitation were performed using a vectorial two-wave mixing. It seems that the separated contribution of the optical nonlinearity associated with each film noticeable differs in the resulting nonlinear effects with respect to the additive response exhibited by the bilayer system. An enhancement of the optical Kerr nonlinearity is predicted for prime number arrays of the studied nanoclusters in a two-wave interaction. We consider that the nanostructured morphology of the thin solid films originates a strong modification of the third-order optical phenomena exhibited by multilayer films based on zinc oxide.

  7. Positron beam and RBS studies of thermally grown oxide films on stainless steel grade 304

    Science.gov (United States)

    Horodek, P.; Siemek, K.; Kobets, A. G.; Kulik, M.; Meshkov, I. N.

    2015-04-01

    The formation of oxide films on surfaces of stainless steel 304 AISI annealed at 800 °C in vacuum, air and in flow N2 atmospheres was studied using variable energy positron beam technique (VEP) and Rutherford backscattering/nuclear reaction (RBS/NR) methods. In frame of these studies, Doppler broadening of annihilation line (DB) measurements were performed. For a sample heated in vacuum the oxide film ca. 8 nm is observed. For specimens oxidized in air and N2 the multi-layered oxide films of about a few hundred nanometers are recognized. The RBS/NR measurements have shown that the sample annealed in vacuum contains a lower quantity of oxygen while for samples heated in the air and N2 non-linear and rather linear time-dependency are observed, respectively. The thicknesses of total oxide films obtained from RBS/NR tests are in good agreement with the VEP results. Time evolution of the oxide growing was studied as well.

  8. Phosphorus collectors from filter paper and synthetic cloth coated with iron or aluminium oxide to provide phosphorus by diffusion in soils

    Directory of Open Access Journals (Sweden)

    Eduardo Bernardi Luchese

    2000-01-01

    Full Text Available Phosphorus collectors made from filter paper and synthetic cloth, were tested to evaluate their feasibility of determining the need for phosphate application. The collectors were coated with two types of oxides, iron oxide and aluminium oxide. The capacity of the collectors was tested by placing them in a 2 mL of solution containing phosphorus (PO4(3- in the concentration of 0.0, 1.00, 3.00, 5.00, 7.00, 9.00 and 11.00 µ g.mL-1, respectively, after which they were placed in contact with four types of soil (LBa, LRd, LEd and Ca and incubed for 0.0 and 24 h. In this test the soils were kept at a humidity equivalent to 150 mmHg suction. The amount of phosphorus extracted from the solutions was tested at intervals between 0,0 and 11.0 µ g of phosphorus/mL. Results indicated that collectors were most efficient in Dystrophic Dark-Red Latosol (LEd and less efficient in "Bruno álico" Latosol (LBa and Cambisol (Ca. Synthetic cloth was the support yielding the best performance, whereas iron oxide lining was the most adequate lining material. Phosphorus collection increased with time of incubation.Coletores de fósforo feitos de papel filtro e pano sintético (perfex foram usados no estudo da determinação da necessidade de adubação fosfatada. Foram preparados coletores impregnados com óxido de ferro e outros com óxido de alumínio. A capacidade foi testada colocando-os em 2 mL de uma solução padrão de fósforo (na forma de fosfato com 0,0; 1,00; 3,00; 5,00; 7,00; 9,00 e 11;00 µg.mL-1 , depois foram colocados em contato com 4 tipos de solos (Lba, LRd, Led e Ca e incubados por 0,0 e 24 horas. No teste, os solos foram mantidos com uma umidade equivalente a 150 mmHg de sucção. Os resultados mostraram que os coletores foram mais eficientes, na extração de fósforo, no solo LED e menos eficiente no LBa e Ca (Cambissolo. O pano sintético foi a matriz (material suporte que proporcionou melhores resultados. O óxido de ferro foi o substrato foi o

  9. Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

    KAUST Repository

    Sun, Ke

    2015-03-11

    Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g). © 2015, National Academy of Sciences. All rights reserved.

  10. Rows of Dislocation Loops in Aluminium Irradiated by Aluminium Ions

    DEFF Research Database (Denmark)

    Henriksen, L.; Johansen, A.; Koch, J.

    1967-01-01

    Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics......Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along directions. ©1967 The American Institute of Physics...

  11. Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications

    International Nuclear Information System (INIS)

    Rim, Y.S.; Kim, H.J.; Kim, K.H.

    2010-01-01

    The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates using the facing targets sputtering (FTS) system. The electrical, optical and structural properties of the IZO thin films deposited as functions of sputtering parameters on the glass and PES substrates. An optimal IZO deposition condition is fabricated for organic light-emitting device (OLED) based on glass and PES. The amorphous IZO anode-based OLEDs show superior current density and luminance characteristics.

  12. Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

    Science.gov (United States)

    Lygdenova, T. Z.; Kalygina, V. M.; Novikov, V. A.; Prudaev, I. A.; Tolbanov, O. P.; Tyazhev, A. V.

    2018-03-01

    The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290-350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level E t located 0.95 eV below the conduction band bottom.

  13. Nickel vacancy behavior in the electrical conductance of nonstoichiometric nickel oxide film

    Science.gov (United States)

    Soo Kim, Dong; Chul Lee, Hee

    2012-08-01

    Nickel vacancy behavior in electrical conductance is systematically investigated using various analysis methods on nickel oxide films deposited at different oxygen partial pressures. The results of Rutherford backscattering, x-ray diffraction, and Auger electron spectroscopy analyses demonstrate that the sputtered nickel oxide films are nickel-deficient. Through the deconvolution of Ni2p and O1s spectra in the x-ray photoelectron spectroscopy data, the number of Ni3+ ions is found to increase with the O2 ratio during the deposition. According to the vacancy model, nickel vacancies created from the non-stoichiometry are concluded to produce Ni3+ ions which lead to an increment of the conductivity of the nickel oxide films due to the increase of the hole concentration.

  14. Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films.

    Science.gov (United States)

    Morales-Sánchez, A; Barreto, J; Domínguez, C; Aceves, M; Yu, Z; Luna-López, J A

    2008-04-23

    Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) followed by a thermal annealing at 1100 °C. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade (CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.

  15. XPS characterization of the anodic oxide film formed on uranium metal in sodium hydroxide solution

    International Nuclear Information System (INIS)

    Fu Xiaoguo; Wang Xiaolin; Guo Huanjun; Wang Qingfu; Zhao Zhengping; Zhong Yongqiang

    2002-01-01

    X-ray photoelectron spectroscopy (XPS) is used to examine the anodic oxide film formed on uranium metal in 0.8 mol/L NaOH solution. The U4f 7/2 fitting spectra suggests that the anodic oxide film is composed of uranium trioxide and a small amount of UO 2+x . Under UHV condition, the U4f peak shifts to the lower binding energy, while a gradual increase in the intensity of U5f peak and the broad of U4f peak are also observed. All of these changes are due to reduction of uranium trioxide in the anodic oxide film. XPS quantitative analysis confirms the occurrence of reduction reaction

  16. Production and study of mixed Al-Al2O3 thin films for passive electronic circuits

    International Nuclear Information System (INIS)

    Pruniaux, B.

    1966-09-01

    A new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al 2 O 3 cermet resistors (R □ = 10000 Ω □ , CTR 2 O 3 capacitors (C □ = 60000 pf/cm 2 , tg δ [fr

  17. Low temperature atmospheric pressure chemical vapor deposition of group 14 oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hoffman, D.M. [Houston Univ., TX (United States); Atagi, L.M. [Houston Univ., TX (United States)]|[Los Alamos National Lab., NM (United States); Chu, Wei-Kan; Liu, Jia-Rui; Zheng, Zongshuang [Houston Univ., TX (United States); Rubiano, R.R. [Massachusetts Inst. of Tech., Cambridge, MA (United States); Springer, R.W.; Smith, D.C. [Los Alamos National Lab., NM (United States)

    1994-06-01

    Depositions of high quality SiO{sub 2} and SnO{sub 2} films from the reaction of homoleptic amido precursors M(NMe{sub 2})4 (M = Si,Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 {plus_minus} 5 atom %. They are deposited with growth rates from 380 to 900 {angstrom}/min. The refractive indexes of the SiO{sub 2} films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm{sup {minus}1}. X-Ray diffraction studies reveal that the SiO{sub 2} film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO{sub 2} films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10{sup {minus}2} to 10{sup {minus}3} {Omega}cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.

  18. Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications

    OpenAIRE

    Fu, Yong Qing; Luo, Jack; Nguyen, Nam-Trung; Walton, Anthony; Flewitt, Andrew; Zu, Xiao-Tao; Li, Yifan; McHale, Glen; Matthews, Allan; Iborra, Enrique; Du, Hejun; Milne, William

    2017-01-01

    Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN) have found a broad range of lab-on-chip applications such as biosensing, particle/cell concentrating, sorting/patterning, pumping, mixing, nebulisation and jetting. Integrated acoustic wave sensing/microfluidic devices have been fabricated by depositing these piezoelectric films onto a number of substrates such as silicon, ceramics, diamond, quartz, glass, and more recently also polymer, metallic foils a...

  19. Influence of substrate temperature on the properties of spray deposited nanofibrous zinc oxide thin films

    Science.gov (United States)

    Sharmin, Mehnaz; Bhuiyan, A. H.

    2018-01-01

    Zinc oxide (ZnO) thin films were deposited onto glass substrates by a spray pyrolysis technique at the substrate temperatures ( T S) between 250 and 500 °C. T S was observed to be one of the key parameters to influence the structural, surface morphological, optical and transport properties of ZnO thin films. X-ray diffraction patterns of the ZnO thin films showed polycrystalline hexagonal wurtzite structure and the preferred orientation was along (002) plane which got more prominent with the increase of T S. Field emission scanning electron microscopy of ZnO thin films showed the existence of nanofibers in the films with the average thickness ranging from 308 to 540 nm. Atomic force microscopy revealed that roughness of the ZnO thin film increased at higher T S. ZnO thin films were highly transparent in the visible to near infrared region with the maximum transmittance of 89% and the optical band gap was found from 3.23 to 3.31 eV. ZnO thin films showed n-type conductivity with the carrier concentrations ranging between 1019 and 1020 cm- 3. ZnO thin film deposited at the T S of 400 °C showed the highest mobility, highest carrier concentration and less resistivity.

  20. Spin coated versus dip coated electrochromic tungsten oxide films: Structure, morphology, optical and electrochemical properties

    International Nuclear Information System (INIS)

    Deepa, M.; Saxena, T.K.; Singh, D.P.; Sood, K.N.; Agnihotry, S.A.

    2006-01-01

    A sol-gel derived acetylated peroxotungstic acid sol encompassing 4 wt.% of oxalic acid dihydrate (OAD) has been employed for the deposition of tungsten oxide (WO 3 ) films by spin coating and dip coating techniques, in view of smart window applications. The morphological and structural evolution of the as-deposited spin and dip coated films as a function of annealing temperature (250 and 500 o C) has been examined and compared by Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). A conspicuous feature of the dip coated film (annealed at 250 o C) is that its electrochromic and electrochemical properties ameliorate with cycling without degradation in contrast to the spin coated film for which these properties deteriorate under repetitive cycling. A comparative study of spin and dip coated nanostructured thin films (annealed at 250 o C) revealed a superior performance for the cycled dip coated film in terms of higher transmission modulation and coloration efficiency in solar and photopic regions, faster switching speed, higher electrochemical activity as well as charge storage capacity. While the dip coated film could endure 2500 color-bleach cycles, the spin coated film could sustain only a 1000 cycles. The better cycling stability of the dip coated film which is a repercussion of a balance between optimal water content, porosity and grain size hints at its potential for electrochromic window applications

  1. Solid-phase photocatalytic degradation of polyethylene film with manganese oxide OMS-2

    Science.gov (United States)

    Liu, Guanglong; Liao, Shuijiao; Zhu, Duanwei; Cui, Jingzhen; Zhou, Wenbing

    2011-01-01

    Solid-phase photocatalytic degradation of polyethylene (PE) film with cryptomelane-type manganese oxide (OMS-2) as photocatalyst was investigated in the ambient air under ultraviolet and visible light irradiation. The properties of the composite films were compared with those of the pure PE film through performing weight loss monitoring, IR spectroscopy, scanning electron microscopic (SEM) and X-ray photoelectron spectroscopy (XPS). The photoinduced degradation of PE-OMS-2 composite films was higher than that of the pure films, while there has been little change under the visible light irradiation. The weight loss of PE-OMS-2 (1.0 wt%) composite films steadily decreased and reached 16.5% in 288 h under UV light irradiation. Through SEM observation there were some cavities on the surface of composite films, but few change except some surface chalking phenomenon occurred in pure PE film. The degradation rate with ultraviolet irradiation is controllable by adjusting the content of OMS-2 particles in PE plastic. Finally, the mechanism of photocatalytic degradation of the composite films was briefly discussed.

  2. Thermal stability of pulsed laser deposited iridium oxide thin films at low oxygen atmosphere

    Science.gov (United States)

    Gong, Yansheng; Wang, Chuanbin; Shen, Qiang; Zhang, Lianmeng

    2013-11-01

    Iridium oxide (IrO2) thin films have been regarded as a leading candidate for bottom electrode and diffusion barrier of ferroelectric capacitors, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the thermal stability of pulsed laser deposited IrO2 thin films at low oxygen atmosphere. Emphasis was given on the effect of post-deposition annealing temperature at different oxygen pressure (PO2) on the crystal structure, surface morphology, electrical resistivity, carrier concentration and mobility of IrO2 thin films. The results showed that the thermal stability of IrO2 thin films was strongly dependent on the oxygen pressure and annealing temperature. IrO2 thin films can stably exist below 923 K at PO2 = 1 Pa, which had a higher stability than the previous reported results. The surface morphology of IrO2 thin films depended on PO2 and annealing temperature, showing a flat and uniform surface for the annealed films. Electrical properties were found to be sensitive to both the annealing temperature and oxygen pressure. The room-temperature resistivity of IrO2 thin films with a value of 49-58 μΩ cm increased with annealing temperature at PO2 = 1 Pa. The thermal stability of IrO2 thin films as a function of oxygen pressure and annealing temperature was almost consistent with thermodynamic calculation.

  3. Electrocatalytic glucose oxidation at gold and gold-carbon nanoparticulate film prepared from oppositely charged nanoparticles

    International Nuclear Information System (INIS)

    Karczmarczyk, Aleksandra; Celebanska, Anna; Nogala, Wojciech; Sashuk, Volodymyr; Chernyaeva, Olga; Opallo, Marcin

    2014-01-01

    Graphical abstract: - Highlights: • Gold nanoparticulate film electrodes were prepared by layer-by-layer method from oppositely charged nanoparticles. • Positively charged nanoparticles play dominant role in glucose oxidation in alkaline solution. • Gold and gold-carbon nanoparticulate film electrodes exhibit similar glucose oxidation current and onset potential. - Abstract: Electrocatalytic oxidation of glucose was studied at nanoparticulate gold and gold-carbon film electrodes. These electrodes were prepared by a layer-by-layer method without application of any linker molecules. Gold nanoparticles were stabilized by undecane thiols functionalized by trimethyl ammonium or carboxylate groups, whereas the carbon nanoparticles were covered by phenylsulfonate functionalities. The gold nanoparticulate electrodes were characterized by UV-vis and XPS spectroscopy, atomic force microscopy and voltammetry, before and after heat-treatment. Heat-treatment facilitates the aggregation of the nanoparticles and affects the structure of the film. The comparison of the results obtained with film electrodes prepared from gold nanoparticles with the same charge and with gold-carbon nanoparticulate electrodes, proved that positively charged nanoparticles are responsible for the high electrocatalytic activity, whereas negatively charged ones act rather as a linker of the film

  4. Epitaxial Lift-Off of Centimeter-Scaled Spinel Ferrite Oxide Thin Films for Flexible Electronics.

    Science.gov (United States)

    Shen, Lvkang; Wu, Liang; Sheng, Quan; Ma, Chunrui; Zhang, Yong; Lu, Lu; Ma, Ji; Ma, Jing; Bian, Jihong; Yang, Yaodong; Chen, Aiping; Lu, Xiaoli; Liu, Ming; Wang, Hong; Jia, Chun-Lin

    2017-09-01

    Mechanical flexibility of electronic devices has attracted much attention from research due to the great demand in practical applications and rich commercial value. Integration of functional oxide materials in flexible polymer materials has proven an effective way to achieve flexibility of functional electronic devices. However, the chemical and mechanical incompatibilities at the interfaces of dissimilar materials make it still a big challenge to synthesize high-quality single-crystalline oxide thin film directly on flexible polymer substrates. This study reports an improved method that is employed to successfully transfer a centimeter-scaled single-crystalline LiFe 5 O 8 thin film on polyimide substrate. Structural characterizations show that the transferred films have essentially no difference in comparison with the as-grown films with respect to the microstructure. In particular, the transferred LiFe 5 O 8 films exhibit excellent magnetic properties under various mechanical bending statuses and show excellent fatigue properties during the bending cycle tests. These results demonstrate that the improved transfer method provides an effective way to compose single-crystalline functional oxide thin films onto flexible substrates for applications in flexible and wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Structural and Electrical Properties of Graphene Oxide-Doped PVA/PVP Blend Nanocomposite Polymer Films

    Directory of Open Access Journals (Sweden)

    S. K. Shahenoor Basha

    2018-01-01

    Full Text Available Graphene oxide (GO nanoparticles were incorporated in PVA/PVP blend polymers for the preparation of nanocomposite polymer films by the solution cast technique. XRD, FTIR, DSC, SEM, and UV-visible studies were performed on the prepared nanocomposite polymer films. XRD revealed the amorphous nature of the prepared films. Thermal analysis of the nanocomposite polymer films was analyzed by DSC. SEM revealed the morphological features and the degree of roughness of the samples. DC conductivity studies were under taken on the samples, and the conductivity was found to be 6.13 × 10−4 S·cm−1 for the polymer film prepared at room temperature. A solid-state battery has been fabricated with the chemical composition of Mg+/(PVA/PVP  :  GO/(I2 + C + electrolyte, and its cell parameters like power density and current density were calculated.

  6. Synthesis and properties of iridescent Zn-containing anodic aluminum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Xiaoxuan; Sun, Huiyuan, E-mail: huiyuansun@126.com; Liu, Lihu; Hou, Xue; Liu, Huiyuan

    2015-07-01

    A simple method of fabricating Zn-containing anodic aluminum oxide films for multifunctional anticounterfeit technology is reported. The resulting membranes were characterized with UV–vis illumination studies, natural light illumination color experiments, and electron microscopy analysis. Deposition of Zn in the nanopore region can enhance the color saturation of the thin alumina film with different colors dramatically. Both the anodization time and etching time have great influence on the structural color. The mechanisms for the emergence of this phenomenon are discussed and theoretical analysis further demonstrates the experimental results. - Highlights: • Iridescent PAA@Zn nanocomposite films were successfully fabricated. • A simple organics-assisted method is applied to making a series of fancy and multicolor patterns. • The color varies with the angle of incidence of the light used to view the film as is expected with Bragg–Snell formula. • Such colored films could be used in multifunctional anti-counterfeiting applications.

  7. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  8. The Effects of ph on Structural and Optical Characterization of Iron Oxide Thin Films

    Science.gov (United States)

    Tezel, Fatma Meydaneri; Özdemir, Osman; Kariper, I. Afşin

    In this study, the iron oxide thin films have been produced by chemical bath deposition (CBD) method as a function of pH onto amorphous glass substrates. The surface images of the films were investigated with scanning electron microscope (SEM). The crystal structures, orientation of crystallization, crystallite sizes, and dislocation density i.e. structural properties of the thin films were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T%), reflectivity (R%), absorption coefficient (α), refraction index (n), extinction coefficient (k) and dielectric constant (ɛ) of the thin films were investigated depending on pH, deposition time, solution temperature, substrate temperature, thickness of the films by UV-VIS spectrometer.

  9. Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Ziyang Hu

    2011-01-01

    Full Text Available Indium-doped zinc oxide (IZO thin films were prepared by low-cost ultrasonic spray pyrolysis (USP. Both a low resistivity (3.13×10−3 Ω cm and an average direct transmittance (400∼1500 nm about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV devices based on poly(3-hexylthiophene and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

  10. Ultrathin free-standing graphene oxide film based flexible touchless sensor

    Science.gov (United States)

    Liu, Lin; Wang, Yingyi; Li, Guanghui; Qin, Sujie; Zhang, Ting

    2018-01-01

    Ultrathin free-standing graphene oxide (GO) films were fabricated by vacuum filtration method assisted with Ni(OH)2 nanosheets as the sacrifice layer. The surface of the obtained GO film is very clean as the Ni(OH)2 nanosheets can be thoroughly etched by HCl. The thickness of the GO films can be well-controlled by changing the volume of GO dispersion, and the thinnest GO film reached ~12 nm. As a novel and transparent dielectric material, the GO film has been applied as the dielectric layer for the flexible touchless capacitive sensor which can effectively distinguish the approaching of an insulator or a conductor. Project supported by the National Natural Science Foundation of China (No. 61574163) and the Foundation Research Project of Jiangsu Province (Nos. BK20160392, BK20170008).

  11. Structural and optical studies of Au doped titanium oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Alves, E., E-mail: ealves@itn.pt [Instituto Tecnologico e Nuclear (ITN), 2686-953 Sacavem (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Av. Gama Pinto, 21649-003 Lisboa (Portugal); Franco, N.; Barradas, N.P. [Instituto Tecnologico e Nuclear (ITN), 2686-953 Sacavem (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Av. Gama Pinto, 21649-003 Lisboa (Portugal); Nunes, B. [Instituto Tecnologico e Nuclear (ITN), 2686-953 Sacavem (Portugal); Lopes, J. [Instituto Superior de Engenharia de Lisboa (Portugal); Cavaleiro, A. [SEC-CEMUC - Universidade de Coimbra, Dept. Eng. Mecanica, Polo II, 3030-788 Coimbra (Portugal); Torrell, M.; Cunha, L.; Vaz, F. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal)

    2012-02-01

    Thin films of TiO{sub 2} were doped with Au by ion implantation and in situ during the deposition. The films were grown by reactive magnetron sputtering and deposited in silicon and glass substrates at a temperature around 150 Degree-Sign C. The undoped films were implanted with Au fluences in the range of 5 Multiplication-Sign 10{sup 15} Au/cm{sup 2}-1 Multiplication-Sign 10{sup 17} Au/cm{sup 2} with a energy of 150 keV. At a fluence of 5 Multiplication-Sign 10{sup 16} Au/cm{sup 2} the formation of Au nanoclusters in the films is observed during the implantation at room temperature. The clustering process starts to occur during the implantation where XRD estimates the presence of 3-5 nm precipitates. After annealing in a reducing atmosphere, the small precipitates coalesce into larger ones following an Ostwald ripening mechanism. In situ XRD studies reveal that Au atoms start to coalesce at 350 Degree-Sign C, reaching the precipitates dimensions larger than 40 nm at 600 Degree-Sign C. Annealing above 700 Degree-Sign C promotes drastic changes in the Au profile of in situ doped films with the formation of two Au rich regions at the interface and surface respectively. The optical properties reveal the presence of a broad band centered at 550 nm related to the plasmon resonance of gold particles visible in AFM maps.

  12. Structural and optical studies of Au doped titanium oxide films

    International Nuclear Information System (INIS)

    Alves, E.; Franco, N.; Barradas, N.P.; Nunes, B.; Lopes, J.; Cavaleiro, A.; Torrell, M.; Cunha, L.; Vaz, F.

    2012-01-01

    Thin films of TiO 2 were doped with Au by ion implantation and in situ during the deposition. The films were grown by reactive magnetron sputtering and deposited in silicon and glass substrates at a temperature around 150 °C. The undoped films were implanted with Au fluences in the range of 5 × 10 15 Au/cm 2 –1 × 10 17 Au/cm 2 with a energy of 150 keV. At a fluence of 5 × 10 16 Au/cm 2 the formation of Au nanoclusters in the films is observed during the implantation at room temperature. The clustering process starts to occur during the implantation where XRD estimates the presence of 3–5 nm precipitates. After annealing in a reducing atmosphere, the small precipitates coalesce into larger ones following an Ostwald ripening mechanism. In situ XRD studies reveal that Au atoms start to coalesce at 350 °C, reaching the precipitates dimensions larger than 40 nm at 600 °C. Annealing above 700 °C promotes drastic changes in the Au profile of in situ doped films with the formation of two Au rich regions at the interface and surface respectively. The optical properties reveal the presence of a broad band centered at 550 nm related to the plasmon resonance of gold particles visible in AFM maps.

  13. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  14. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Denny, Yus Rama [Department of Physics Education, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Firmansyah, Teguh [Department of Electrical Engineering, University of Sultan Ageng Tirtayasa, Banten 42435 (Indonesia); Oh, Suhk Kun [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Yang, Dong-Seok [Department of Physics Education, Chungbuk National University, Cheongju 28644 (Korea, Republic of); Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol [Analytical Engineering Center, Samsung Advanced Institute of Technology, Suwon 16678 (Korea, Republic of)

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  15. Investigation of hexadecanethiol self-assembled monolayers on cadmium tin oxide thin films

    International Nuclear Information System (INIS)

    Rhodes, Crissy L.; Brewer, Scott H.; Folmer, Jaap; Franzen, Stefan

    2008-01-01

    This study reports the use of variable angle reflectance Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy to investigate the formation of a 1-hexadecanethiol adlayer on cadmium tin oxide (CTO) thin film surfaces. These adlayers appear to be robust, ordered monolayers. The optical and electronic properties of CTO thin films chemically vapor deposited onto glass substrates were also investigated. The reflectance of the CTO films was dependent upon the incident angle of the impinging radiation and revealed a reflectance decrease indicative of a plasma frequency in the mid-IR using p-polarized radiation

  16. Rapid synthesis of tantalum oxide dielectric films by microwave microwave-assisted atmospheric chemical vapor deposition

    International Nuclear Information System (INIS)

    Ndiege, Nicholas; Subramanian, Vaidyanathan; Shannon, Mark A.; Masel, Richard I.

    2008-01-01

    Microwave-assisted chemical vapor deposition has been used to generate high quality, high-k dielectric films on silicon at high deposition rates with film thicknesses varying from 50 nm to 110 μm using inexpensive equipment. Characterization of the post deposition products was performed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Raman spectroscopy. Film growth was determined to occur via rapid formation and accumulation of tantalum oxide clusters from tantalum (v) ethoxide (Ta(OC 2 H 5 ) 5 ) vapor on the deposition surface

  17. Light irradiation tuning of surface wettability, optical, and electric properties of graphene oxide thin films

    Science.gov (United States)

    Furio, A.; Landi, G.; Altavilla, C.; Sofia, D.; Iannace, S.; Sorrentino, A.; Neitzert, H. C.

    2017-02-01

    In this work the preparation of flexible polymeric films with controlled electrical conductivity, light transmission and surface wettability is reported. A drop casted graphene oxide thin film is photo-reduced at different levels by UV light or laser irradiation. Optical microscopy, IR spectroscopy, electrical characterization, Raman spectroscopy and static water contact angle measurements are used in order to characterize the effects of the various reduction methods. Correlations between the optical, electrical and structural properties are reported and compared to previous literature results. These correlations provide a useful tool for independently tuning the properties of these films for specific applications.

  18. A new synthesis process for aluminium nitride. Nouveau procede de synthese du nitrure d'aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Haussonne, J.M. (CNET, Centre Lannion B, 22 (France)); Lostec, J. (CNET, Centre Lannion B, 22 (France)); Bertot, J.P. (CNET, Centre Lannion B, 22 (France)); Lostec, L. (CNET, Centre Lannion B, 22 (France)); Sadou, S. (CNET, Centre Lannion B, 22 (France))

    1993-04-01

    Thermodynamic considerations show that, even at room temperature, pure aluminium can react with nitrogen to form the aluminium nitride AlN. However, pure aluminium does not exist: it is always surrounded by an alumina shell that protects the metal from further reactions. Furthermore, in the hypothesis where one has been able to make aluminium react with nitrogen, an aluminium nitride shell will protect as well the metal core from further oxidation. Prompted by the Lanxide process allowing to form Al/Al[sub 2]O[sub 3] composites, we have mixed aluminium powders with lithium salts, and easily synthesized pure aluminium nitride by heating the mixed powders in nitrigen at temperatures ranging from 800 to 1200 C. Starting from aluminium powders with a specific area ranging from 0.3 to 4 m[sup 2]/g, we have been able to produce aluminium nitride with specific are ranging from 1 to 20 m[sup 2]/g. Mixed with Y[sub 2]O[sub 3]-CaO and sintered at 1720 C in N[sub 2], we obtained AlN ceramics owning 92% density and 160 W/m.K thermal conductivity. (orig.).

  19. Indium zinc oxide films deposited on PET by LF magnetron sputtering

    International Nuclear Information System (INIS)

    Kim, Eun Lyoung; Jung, Sang Kooun; Sohn, Sang Ho; Park, Duck Kyu

    2007-01-01

    Indium zinc oxide (IZO) has attracted much attention recently for use in transparent oxide films compared with the ITO film. We carried out the deposition of IZO on a polyethylene terapthalate (PET) substrate at room temperature by a low-frequency (LF) magnetron sputtering system. These films have amorphous structures with excellent electrical stability, surface uniformity and high optical transmittance. The effects of LF applied voltage and O 2 flow rate were investigated. The electrical and optical properties were studied. At optimal deposition conditions, thin films of IZO with a sheet resistance of 32 Ω/sq and an optical transmittance of over 80% in the visible spectrum range were achieved. The IZO thin films fabricated by this method do not require substrate heating during the film preparation of any additional post-deposition annealing treatment. The experimental results show that films with good qualities of surface morphology, transmittance and electrical conduction can be grown by the LF magnetron sputtering method on PET which is recommendable

  20. Synthesis and characterization of nanocrystalline vanadium oxide thin films: electrochemical behavior by annealing in different atmosphere

    Science.gov (United States)

    Asiabar, M. Amiri; Mohaghegh, Z.; Ghodsi, F. E.

    2018-01-01

    Nanocrystalline vanadium oxide thin films were prepared using sol-gel dip-coating technique. The effect of heat treatment in different environment including air, N2, Ar, and O2 gas on the structural, optical, electrical, and electrochemical properties of nanocrystalline vanadium oxide thin films were investigated. The results indicated that the calculated average crystallite size was reduced by annealing in Ar environment. Scanning electron microscopy (SEM) images showed layered morphology on the surface of the film annealed in air atmosphere, whereas the film annealed under Ar and N2 ambient revealed granular and wrinkle morphology, respectively. This morphology altered to rather smooth surface by annealing in O2 environment. The optical bandgap of the films were found to be 1.75, 1.84, 2.08, and 2.10 eV annealed in air, O2, N2, and Ar environment, respectively. It was observed that the films annealed under Ar and N2 ambient had low resistivity ( 0.2 Ω cm) and high carrier concentration, while the film annealed in nitrogen environment showed higher mobility of charge carrier. The electrochemical measurements showed that annealing under N2 ambient improved the intercalation of Li ions, leading a higher interfacial capacitance of 19.18 mF Cm-2, and decreased the charge transfer resistance due to surface defects created by heat treatment in nitrogen environment.