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Sample records for alloy thin films

  1. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  2. Thin-film diffusion brazing of titanium alloys

    Science.gov (United States)

    Mikus, E. B.

    1972-01-01

    A thin film diffusion brazing technique for joining titanium alloys by use of a Cu intermediate is described. The method has been characterized in terms of static and dynamic mechanical properties on Ti-6Al-4V alloy. These include tensile, fracture toughness, stress corrosion, shear, corrosion fatigue, mechanical fatigue and acoustic fatigue. Most of the properties of titanium joints formed by thin film diffusion brazing are equal or exceed base metal properties. The advantages of thin film diffusion brazing over solid state diffusion bonding and brazing with conventional braze alloys are discussed. The producibility advantages of this process over others provide the potential for producing high efficiency joints in structural components of titanium alloys for the minimum cost.

  3. Thin film reactions on alloy semiconductor substrates

    Energy Technology Data Exchange (ETDEWEB)

    Olson, D.A.

    1990-11-01

    The interactions between Pt and In{sub .53}Ga{sub .47}As have been studied. In{sub .53}Ga{sub .47}As substrates with 70nm Pt films were encapsulated in SiO{sub 2}, and annealed up to 600{degree}C in flowing forming gas. The composition and morphology of the reaction product phases were studied using x-ray diffraction, Auger depth profiling, and transmission electron microscopy. The reaction kinetics were examined with Rutherford Backscattering. Results show that Pt/In{sub .53}Ga{sub .47}As reacts to form many of the reaction products encountered in the Pt/GaAs and Pt/InP reactions: PtGa, Pt{sub 3}Ga, and PtAs{sub 2}. In addition, a ternary phase, Pt(In:Ga){sub 2}, develops, which is a solid solution between PtIn{sub 2} and PtGa{sub 2}. The amount of Ga in the ternary phase increases with annealing temperature, which causes a decrease in the lattice parameter of the phase. The reaction products show a tendency to form layered structures, especially for higher temperatures and longer annealing times. Unlike the binary case, the PtAs{sub 2}, phase is randomly oriented on the substrate, and is intermingle with a significant amount of Pt(In:Ga){sub 2}. Following Pt/In{sub .53}Ga{sub .47}As reactions, two orientation relationships between the Pt(In:Ga){sub 2} product phase and the substrate were observed, despite the large mismatch with the substrate ({approximately}8%). For many metal/compound semiconductor interactions, the reaction rate is diffusion limited, i.e. exhibits a parabolic dependence on time. An additional result of this study was the development of an In-rich layer beneath the reacted layer. The Auger depth profile showed a substantial increase in the sample at this layer. This is a significant result for the production of ohmic contacts, as the Schottky barrier height in this system lower for higher In concentrations. 216 refs.

  4. Novel tribological systems using shape memory alloys and thin films

    Science.gov (United States)

    Zhang, Yijun

    Shape memory alloys and thin films are shown to have robust indentation-induced shape memory and superelastic effects. Loading conditions that are similar to indentations are very common in tribological systems. Therefore novel tribological systems that have better wear resistance and stronger coating to substrate adhesion can be engineered using indentation-induced shape memory and superelastic effects. By incorporating superelastic NiTi thin films as interlayers between chromium nitride (CrN) and diamond-like carbon (DLC) hard coatings and aluminum substrates, it is shown that the superelasticity can improve tribological performance and increase interfacial adhesion. The NiTi interlayers were sputter deposited onto 6061 T6 aluminum and M2 steel substrates. CrN and DLC coatings were deposited by unbalanced magnetron sputter deposition. Temperature scanning X-ray diffraction and nanoindentation were used to characterize NiTi interlayers. Temperature scanning wear and scratch tests showed that superelastic NiTi interlayers improved tribological performance on aluminum substrates significantly. The two-way shape memory effect under contact loading conditions is demonstrated for the first time, which could be used to make novel tribological systems. Spherical indents in NiTi shape memory alloys and thin films had reversible depth changes that were driven by temperature cycling, after thermomechanical cycling, or one-cycle slip-plasticity deformation training. Reversible surface topography was realized after the indents were planarized. Micro- and nano- scale circular surface protrusions arose from planarized spherical indents in bulk and thin film NiTi alloy; line surface protrusions appeared from planarized scratch tracks. Functional surfaces with reversible surface topography can potentially result in novel tribological systems with reversible friction coefficient. A three dimensional constitutive model was developed to describe shape memory effects with slip

  5. Effects of heat treatment process on thin film alloy resistance and its stability

    Institute of Scientific and Technical Information of China (English)

    周继承; 彭银桥

    2003-01-01

    Alloy thin film for advanced pressure sensors was manufactured by means of ion-beam sputtering SiO2 insulation film and NiCr thin film on the 17-4PH stainless steel elastic substrate. The thin film resistance was respectively heat-treated by four processes. The effects on stability of thin film alloy resistance were investigated, and paramaters of heat treatment that make thin film resistance stable were obtained. The experimental result indicates that the most stable thin film resistance can be obtained when it is heat-treated under protection of SiO2 and N2 at 673 K for 1 h, and then kept at 473 K for 24 h. Pressure sensor chips of high precision for harsh environments can be manufactured by this process.

  6. Perpendicular Magnetic Anisotropy in Co-Based Full Heusler Alloy Thin Films

    Science.gov (United States)

    Wu, Y.; Xu, X. G.; Miao, J.; Jiang, Y.

    2015-12-01

    Half-metallic Co-based full Heusler alloys have been qualified as promising functional materials in spintronic devices due to their high spin polarization. The lack of perpendicular magnetic anisotropy (PMA) is one of the biggest obstacles restricting their application in next generation ultrahigh density storage such as magnetic random access memory (MARM). How to induce the PMA in Co-based full Heusler alloy thin films has attracted much research interest of scientists. This paper presents an overview of recent progress in this research area. We hope that this paper would provide some guidance and ideas to develop highly spin-polarized Co-based Heusler alloy thin films with PMA.

  7. Fabrication and biocompatibility in vitro of potassium titanate biological thin film/titanium alloy biological composite

    Institute of Scientific and Technical Information of China (English)

    QI Yumin; HE Yun; CUI Chunxiang; LIU Shuangjin; WANG Huifen

    2007-01-01

    A potassium titanate biological thin film/titanium alloy biological composite was fabricated by way of bionic chemistry.The biocompatibility fn vitro of Ti-15Mo-3Nb and the potassium titanate biological thin film/titanium alloy was studied using simulated body fluid cultivation,kinetic clotting of blood and osteoblast cell cultivation experiments in vitro.By comparing the biological properties of both materials,the following conclusions can be obtained:(1)The deposition of a calcium phosphate layer was not found on the surface of Ti-15Mo-3Nb,so it was bioinert.Because the network of potassium titanate biological thin film could induce the deposition of a calcium phosphate layer,this showed that it had excellent bioactivity.(2)According to the values of kinetic clotting,the blood coagulation time of the potassium titanate biological thin film was more than that of Ti-15Mo-3Nb.It was obvious that the potassium titanate biological thin film possessed good hemocompatibility.(3)The cell compatibility of both materials was very good.However,the growth trend and multiplication of osteoblast cells on the surface of potassium titanate biological thin film was better,which made for the concrescence of wounds during the earlier period.As a result,the potassium titanate biological thin film/titanium alloy showed better biocompatibility and bioactivity.

  8. Superelasticity of NiTi Shape Memory Alloy Thin Films

    Institute of Scientific and Technical Information of China (English)

    Zhenyu YUAN; Dong XU; Zhican YE; Bingchu CAI

    2005-01-01

    The superelastic properties of NiTi thin films prepared with sputtering were studied. To characterize their superelasticity, tensile and bulging and indentation tests were performed. The measured mechanisms using these three methods were compared, and the factors that influence superelasticity were described.

  9. Studies on Wear and Corrosion Resistances of Carbon Nitride Thin Films on Ti Alloy

    Institute of Scientific and Technical Information of China (English)

    LiJin-chai; GuoHuai-xi; LuXlan-feng; ZhangZhi-hong; YeMing-sheng

    2003-01-01

    CNx/SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD ). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction (XRD) measurement revealed that the composite films possessed α-C3N4 structure.The microhardness of the films was 48 to 50 GPa. In or der totest the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CNx/SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0. 9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CNx films had excellent charac-teristics of wear and corrosion resistances compared with Ti alloy substrate samples.

  10. Studies on Wear and Corrosion Resistances of Carbon Nitride Thin Films on Ti Alloy

    Institute of Scientific and Technical Information of China (English)

    Li Jin-chai; Guo Huai-xi; Lu Xian-feng; Zhang Zhi-hong; Ye Ming-sheng

    2003-01-01

    CNx/SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF-PECVD ). As a buffer layer, SiCN ensured the adhesion of the CNx thin films on Ti substrates. X-ray diffraction (XRD) measurement revealed that the composite films possessed α-C3N4 structure.The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CNx/SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0. 9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CNx films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.

  11. Thermo EMF and Hall effect behaviour of thin films of antimony-tellurium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Dhiren Singh, N. (Dept. of Physics, Manipur Univ., Imphal (India)); Sarma, H.N.K. (Dept. of Physics, Manipur Univ., Imphal (India))

    1994-04-16

    This note presents the results of measurements of thermo emf and Hall effect of Sb[sub 40]Te[sub 60] alloy thin films. The alloy was prepared by taking a stoichiometric mixture (2:3) of high purity elements antimony and tellurium each of purity 99.999 (Koch-Light Laboratories Ltd., England) in a vacuum sealed quartz tube and heating in a furnace to a temperature of about 1070 K for 12 h. (orig.)

  12. Effects of Alloying on the Optical Properties of Organic-Inorganic Lead Halide Perovskite Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Ndione, Paul F.; Li, Zhen; Zhu, Kai

    2016-09-07

    Complex refractive index and dielectric function spectra of organic-inorganic lead halide perovskite alloy thin films are presented, together with the critical-point parameter analysis (energy and broadening) of the respective composition. Thin films of methylammonium lead halide alloys (MAPbI3, MAPbBr3, MAPbBr2I, and MAPbBrI2), formamidinium lead halide alloys (FAPbI3, FAPbBr3, and FAPbBr2I), and formamidinium cesium lead halide alloys [FA0.85Cs0.15PbI3, FA0.85Cs0.15PbBrI2, and FA0.85Cs0.15Pb(Br0.4I0.6)3] were studied. The complex refractive index and dielectric functions were determined by spectroscopic ellipsometry (SE) in the photon energy range of 0.7-6.5 eV. Critical point energies and optical transitions were obtained by lineshape fitting to the second-derivative of the complex dielectric function data of these thin films as a function of alloy composition. Absorption onset in the vicinity of the bandgap, as well as critical point energies and optical band transition shift toward higher energies as the concentration of Br in the films increases. Cation alloying (Cs+) has less effect on the optical properties of the thin films compared to halide mixed alloys. The reported optical properties can help to understand the fundamental properties of the perovskite materials and also be used for optimizing or designing new devices.

  13. A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

    Institute of Scientific and Technical Information of China (English)

    Jaydeep; SARKAR; Tien-Heng; HUANG; Lih-Ping; WANG; Peter; H.; McDONALD; Chi-Fung; LO; Paul; S.; GILMAN

    2009-01-01

    In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95―2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350℃, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satis- factory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of Al-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

  14. A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

    Institute of Scientific and Technical Information of China (English)

    Jaydeep SARKAR; Tien-Heng HUANG; Lih-Ping WANG; Peter H.McDONALD; Chi-Fung LO; Paul S.GILMAN

    2009-01-01

    In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95-2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350℃, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satis-factory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of AI-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

  15. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

    Energy Technology Data Exchange (ETDEWEB)

    Barbe, Jeremy, E-mail: jeremy.barbe@hotmail.com [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); Xie, Ling; Leifer, Klaus [Department of Engineering Sciences, Uppsala University, Box 534, S-751 21 Uppsala (Sweden); Faucherand, Pascal; Morin, Christine; Rapisarda, Dario; De Vito, Eric [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Makasheva, Kremena; Despax, Bernard [Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); CNRS, LAPLACE, F-31062 Toulouse (France); Perraud, Simon [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2012-11-01

    The present study demonstrates the growth of silicon nanocrystals on amorphous silicon carbide alloy thin films. Amorphous silicon carbide films [a-Si{sub 1-x}C{sub x}:H (with x < 0.3)] were obtained by plasma enhanced chemical vapor deposition from a mixture of silane and methane diluted in hydrogen. The effect of varying the precursor gas-flow ratio on the film properties was investigated. In particular, a wide optical band gap (2.3 eV) was reached by using a high methane-to-silane flow ratio during the deposition of the a-Si{sub 1-x}C{sub x}:H layer. The effect of short-time annealing at 700 Degree-Sign C on the composition and properties of the layer was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was observed that the silicon-to-carbon ratio in the layer remains unchanged after short-time annealing, but the reorganization of the film due to a large dehydrogenation leads to a higher density of SiC bonds. Moreover, the film remains amorphous after the performed short-time annealing. In a second part, it was shown that a high density (1 Multiplication-Sign 10{sup 12} cm{sup -2}) of silicon nanocrystals can be grown by low pressure chemical vapor deposition on a-Si{sub 0.8}C{sub 0.2} surfaces at 700 Degree-Sign C, from silane diluted in hydrogen. The influence of growth time and silane partial pressure on nanocrystals size and density was studied. It was also found that amorphous silicon carbide surfaces enhance silicon nanocrystal nucleation with respect to SiO{sub 2}, due to the differences in surface chemical properties. - Highlights: Black-Right-Pointing-Pointer Silicon nanocrystals (Si-NC) growth on amorphous silicon carbide alloy thin films Black-Right-Pointing-Pointer Plasma deposited amorphous silicon carbide films with well-controlled properties Black-Right-Pointing-Pointer Study on the thermal effect of 700 Degree-Sign C short-time annealing on the layer properties Black-Right-Pointing-Pointer Low pressure

  16. High entropy alloy thin films deposited by magnetron sputtering of powder targets

    Energy Technology Data Exchange (ETDEWEB)

    Braeckman, B.R., E-mail: BertR.Braeckman@Ugent.be [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Boydens, F. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium); Hidalgo, H.; Dutheil, P. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Jullien, M. [Institut Jean Lamour, Université de Lorraine, UMR CNRS, 7198 Vandoeuvre-lès-Nancy (France); Thomann, A.-L. [GREMI, UMR7344 CNRS, Université d' Orléans, BP6744, 45067 Orléans Cedex 2 (France); Depla, D. [Department of Solid State Sciences, Ghent University, Krijgslaan 281 (S1), 9000 Gent (Belgium)

    2015-04-01

    High entropy alloys (HEA) contain at least five principal elements in equimolar or near-equimolar ratios. These materials crystallize typically as a face-centered cubic (FCC), body-centered cubic (BCC) solid solution or as a mixture of these two crystal structures. AlCoCrCuFeNi thin films were deposited by magnetron sputtering of homemade pressed powder targets. Four targets with different compositions were sputtered under various conditions to modify the alloy composition. Scanning electron microscopy and energy-dispersive X-ray spectroscopy were used to study the surface morphology and composition whereas X-ray diffraction and X-ray reflectivity provided information regarding the phase formation and density of the films. It is suggested that, when taking into account the atomic radii of the constituent elements, the sputter deposited alloy thin films can be topologically regarded as binary alloys of the form Al-(CoCrCuFeNi). If the concentration of the largest atom (Al) increases, a transition from FCC to BCC is noticed. This structure transition could be attributed to a critical lattice distortion. - Highlights: • AlCoCrCuFeNi thin films were deposited by sputtering pressed power targets. • Sputter deposition of powder targets allows good control over the film composition. • With increasing Al fraction, a crystallographic structure transition was noticed. • The transition was made semi-quantitative with Egami's atomic-level stress theory.

  17. Selective Ablation of thin Nickel-chromium-alloy Films Using Ultrashort Pulsed Laser

    Science.gov (United States)

    Pabst, Linda; Ebert, Robby; Exner, Horst

    The selective ablation of 100nm thin Nickel-Chromium-alloy films on glass substrate was investigated using femtosecond laser pulses (λ=1030nm, τp=170 fs, Ep,max=7μJ). The influence of the processing parameters such as fluence, pulse number and pulse repetition rate on the ablation process was examined. Single and multiple pulses ablation thresholds of the Nickel-Chromium-alloy film were determined and the incubation coefficient calculated. Optical and electron microscopy were employed to characterize the patterned area. As a result, different irradiation morphologies were observed, dependent from the processing parameters. A processing window for film side ablation of the Nickel-Chromium-alloy film without damaging the underlying glass substrate was found, however, the edge of the ablation craters were covered with laser induced periodic surface structures (LIPSS).

  18. Alloy Thin-films and Surfaces for New Materials. Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Sprunger, P.T.

    2003-08-10

    Within the framework of a DOE National Laboratory/EPSCoR state partnership, investigations by researchers at Louisiana State University and Oak Ridge National Laboratory were focused on revealing the unique nanophase properties of alloy thin-films and bimetallic surfaces. Employing a number of experimental preparation techniques and characterization probes (synchrotron-based angle-resolved and valence/core-level PES and variable-temperature STM/STS), the goal of this program was to elucidate of the interconnecting physical and chemical properties of a variety of alloy surfaces and thin-films, specifically, determining the correlation between atomic structure/composition, electronic structure, and catalytic/chemisorption properties of these nanoscale.

  19. Electrophysical and Magnetoresistive Properties of Thin Film Alloy Ni80Fe20

    Directory of Open Access Journals (Sweden)

    О.V. Pylypenko

    2016-10-01

    Full Text Available In this work, the complex investigations of crystal structure and phase state, thermoresistive (resistivity, temperature coefficient of resistance, strain (integral and differential coefficients of longitudinal tensosensitivity at the strain interval Δεl = 0-1 % and magnetoresistive (magnetoresistance and anisotropic magnetoresistance properties of the thin film alloy Ni80Fe20 in the thicknesses range 10-45 nm. The effects of condensation conditions and heat treatments on referred above properties have been analyzed.

  20. Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

    Science.gov (United States)

    Halpern, Jeffrey M; Martin, Heidi B

    2014-02-01

    Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp(2) carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

  1. Characterization of thermally evaporated CZTSe thin films used by compositionally controlled alloys

    Science.gov (United States)

    Sripan, Chinnaiyah; Ganesan, R.; Naik, Ramakanta; Viswanath, A. Kasi

    2016-12-01

    Stoichiometric adjusted Cu2Zn1.5Sn1.2Se4+x (CZTSe) alloys were successfully prepared by a thermal molten method. The pure phase was formed at x = 0.8 as confirmed by XRD and Raman spectroscopy. The bulk alloy was used for thin film coating by thermal evaporation method. The prepared films were characterized by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and FT-IR spectroscopy. The XRD and Raman spectroscopy analysis revealed the formation of polycrystalline CZTSe thin films with tetragonal crystal structure after annealing of 450 °C. Diode characteristics were studied on the Mo/CZTSe/CdS sandwich geometry. The oxidation state of the selenized film was studied by XPS. The optical band gap of the CZTSe film was about 1.42 eV, which was varying with annealing and selenization condition. The carrier concentration, resistance and mobility of the selenized films were found to be 5.2 × 1015 cm-3, 2.2 KΩ/square and 5.5 cm2 V-1s-1 respectively and the conduction type was p-type. This study sheds light on the effect of annealing and selenization on various phases modifications and the light-harvesting capability of CZTSe solar cells.

  2. Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

    Science.gov (United States)

    Woods, Lawrence M.; Kalla, Ajay; Ribelin, Rosine

    2007-01-01

    Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

  3. Annealing effects on the electrical resistivity of AuAl thin films alloys

    Energy Technology Data Exchange (ETDEWEB)

    Maldonado, R.D., E-mail: rubdoming@live.com.mx [Centro de Investigacion y de Estudios Avanzados del IPN Unidad Merida, Depto. de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso 97310, Merida, Yucatan (Mexico); Oliva, A.I.; Corona, J.E. [Centro de Investigacion y de Estudios Avanzados del IPN Unidad Merida, Depto. de Fisica Aplicada, Km. 6 Antigua Carretera a Progreso 97310, Merida, Yucatan (Mexico)

    2009-08-15

    Au/Al bilayer (50-250-nm thickness) thin films were deposited by thermal evaporation on p-type silicon (1 0 0) substrates. The formed Au/Al/Si systems were annealed from room temperature (RT) to 400 deg. C to form AuAl/Si alloys. Two groups of AuAl alloys were analyzed. The first group was prepared as a function of the atomic concentration and the second group was prepared as a function of thickness. The morphology and crystalline structure of the alloys were analyzed by AFM and X-ray diffraction techniques, respectively. The electrical resistivities of the AuAl alloys were measured by the four-probe technique. The first group of thin AuAl alloys presented segregations as a consequence of the annealing treatment and the atomic concentration; meanwhile, the electrical resistivity showed abrupt changes as a consequence of changing the atomic concentration. In the second group a monotonically increment in the grain size was found meanwhile for thickness below 100 nm the electrical resistivity presented important differences as compared with the before annealing process.

  4. Formation and structure of V-Zr amorphous alloy thin films

    KAUST Repository

    King, Daniel J M

    2015-01-01

    Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

  5. Influence of bath composition on the electrodeposition of cobalt-molybdenum amorphous alloy thin films

    Institute of Scientific and Technical Information of China (English)

    Qiaoying Zhou; Hongliang Ge; Guoying Wei; Qiong Wu

    2008-01-01

    Cobalt-molybdenum (Co-Mo) amorphous alloy thin films were deposited on copper substrates by the electrochemical method at pH 4.0. Among the experimental electrodeposition parameters, only the concentration ratio of molybdate to cobalt ions ([ MoO2-4 ]/[CO2+]) was varied to analyze its influence on the mechanism of induced cobalt-molybdenum codeposition. Voltammetry was one of the main techniques, which was used to examine the voltammetric response, revealing that cobalt-molybdenum codeposi-tion depended on the nature of the species in solution. To correlate the type of the film to the electrochemical response, various co-bait-molybdenum alloy thin films obtained from different [ MoO2-4]/[Co2+] solutions were tested. Crack-free homogeneous films could be easily obtained from the low molybdate concentrations ([ MoO2-4]/[Co2+]≈0.05) applying low deposition potentials.Moreover, the content of molybdenum up to 30wt% could be obtained from high molybdate concentration; in this case, the films showed cracks. The formation of these cracked films could be predicted from the observed distortions in the curves of electric cur-rent-time (j-t) deposition transients. The films with amorphous stmeture were obtained. The hysteresis loops suggested that the easily film were obtained when the deposition potential was -1025 mV, and [ MoO2-4]/[Co2+] was 0.05 in solution, which exhibited a nicer soft-magnetic response.

  6. Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells%Study on AlxNiy Alloys as Diffusion Barriers in Flexible Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    岳红云; 吴爱民; 秦福文; 李廷举

    2011-01-01

    Co-sputtered AlxNiy thin films were used as diffusion barriers between aluminum and hydrogenated microcrystalline silicon (μc-Si:H) for flexible thin film solar cells. The stoichiometric ratio of AlxNiy showed a significant effect on the structures of the films. The obtained Al3Ni2 film was amorphous, while polycrystalline films were obtained when the ratio of aluminum to nickel was 1:1 and 2:3. An auger electron spectroscope and four-point probe system were applied to test the resistance to the interdiffusion between aluminum and silicon, as well as the conductivities of the AlxNiy barriers. The data of auger depth profile showed that the content of silicon was the minimum in the aluminum layer after sputtering for 4 min using AlNi thin film as the barrier layer. Compared to other AlxNiy alloys, the AlNi thin film possessed the lowest sheet resistance.

  7. Room temperature magnetocaloric effect in Ni-Mn-In-Cr ferromagnetic shape memory alloy thin films

    Science.gov (United States)

    Akkera, Harish Sharma; Singh, Inderdeep; Kaur, Davinder

    2017-02-01

    The influence of Cr substitution for In on the martensitic phase transformation and magnetocaloric effect (MCE) has been investigated in Ni-Mn-Cr-In ferromagnetic shape memory alloy (FSMA) thin films fabricated by magnetron sputtering. Temperature dependent magnetization (M-T) measurements demonstrated that the martensitic transformation temperatures (TM) monotonously increase with the increase of Cr content due to change in valence electron concentration (e/a) and cell volume. From the study of isothermal magnetization curves (M-H), magnetocaloric effect around the martensitic transformation has been investigated in these FSMA thin films. The magnetic entropy change ∆SM of 7.0 mJ/cm3-K was observed in Ni51.1Mn34.9In9.5Cr4.5 film at 302 K in an applied field of 2 T. Further, the refrigerant capacity (RC) was also calculated for all the films in an applied field of 2 T. These findings indicate that the Cr doped Ni-Mn-In FSMA thin films are potential candidates for room temperature micro-length-scale magnetic refrigeration applications.

  8. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys

    Directory of Open Access Journals (Sweden)

    Lucia V. Mercaldo

    2016-03-01

    Full Text Available The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied within thin-film Si solar cells for these purposes. Intrinsic a-SiOx:H films have been fabricated and characterized as a promising wide gap absorber for application in triple-junction solar cells. Single-junction test devices with open circuit voltage up to 950 mV and ~1 V have been demonstrated, in case of rough and flat front electrodes, respectively. Doped silicon oxide alloys with mixed-phase structure have been developed, characterized by considerably lower absorption and refractive index with respect to standard Si-based films, accompanied by electrical conductivity above 10−5 S/cm. These layers have been successfully applied both into single-junction and micromorph tandem solar cells as superior doped layers with additional functionalities.

  9. Amorphous Hydrogenated Carbon-Nitrogen Alloy Thin Films for Solar Cell Application

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Bin; DING Zheng-Ming; PANG Qian-Jun; CUI Rong-Qiang

    2001-01-01

    Amorphous hydrogenated carbon-nitrogen alloy (a-CNx :H) thin films have been deposited on silicon substratesby improved dc magnetron sputtering from a graphite target in nitrogen and hydrogen gas discharging. Thefilms are investigated by using Raman spectroscopy, x-ray photoelectron spectroscopy, spectral ellipsometer and electron spin resonance techniques. The optimized process condition for solar cell application is discussed. Thephotovoltaic property of a-CNx:H/silicon heterojunctions can be improved by the adjustment of the pressureratio of hydrogen to nitrogen and unbalanced magnetic field intensity. Open-circuit voltage and short-circuitcurrent reach 300mV and 5.52 Ma/cm2, respectively.

  10. Nucleation, wetting and agglomeration of copper and copper-alloy thin films on metal liner surfaces

    Science.gov (United States)

    LaBarbera, Stephanie Florence

    One of the key challenges in fabricating narrower and higher aspect ratio interconnects using damascene technology has been achieving an ultra-thin (˜2 nm) and continuous Cu seed coverage on trench sidewalls. The thin seed is prone to agglomeration because of poor Cu wetting on the Ta liner. Using in-situ conductance measurements, the effect of lowering the substrate temperature during Cu seed deposition has been studied on tantalum (Ta) and ruthenium (Ru) liner surfaces. On a Ta surface, it was found that lowering the deposition temperature to --65°C increases the nucleation rate of the Cu thin film, and reduces the minimum coalescing thickness for Cu on Ta liner from ˜4.5 nm (at room temperature) to ˜2 nm. On a Ru surface, Cu coalesces at wetting angle, coalescing thickness, and agglomeration resistance of thin Cu-3% Au, Cu-3% Mn, and Cu-3% Al layers on a Ta liner surface have been studied. It was found that the alloying increases the wetting angle of Cu on Ta at high temperature, as a result of either reduction in Cu alloy surface energy, solute surface segregation, or solute-liner interactions. In addition, the Cu alloys were found to be less agglomeration resistive as compared to pure Cu; their smaller grain size, interaction with the liner surface, and tendency to oxidize were found to accelerate their agglomeration. The coalescing thickness of the Cu alloys was found to be reduced from that of Cu (˜4.5 nm) to ˜2 nm.

  11. Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Kawai T.

    2014-07-01

    Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

  12. Discontinuity in heat capacity of Fe0.5Co0.5(110) alloy thin films

    Science.gov (United States)

    Ramírez-Dámaso, G.; Castillo-Alvarado, F.-L.; Cruz-Torres, A.; Rójas-Hernández, E.

    2016-07-01

    In this work we calculate heat capacity of alloy thin films of FeCo on the surface of the plane (110), using three parameters, the concentration x(i), the lattice long range order parameter t(i) and the magnetic order parameter σ(i), being i the number of layers of the thin film. The formulations reported by Hill [1] in the context of small particles and Valenta's model [2] can be applied to the film structure when we treat a thin film as a system divided into subsystems equivalent to two-dimensional parallel layers. The FeCo bulk alloy is completely homogeneous while a thin film have spatial discontinuities in their surfaces. We consider three ferromagnetic thin films formed by 11, 15 and 19 layers in the Helmholtz's free energy, which is minimized applying their first partial derivatives with respect to chemical composition, long range order parameter and magnetic order parameter. We calculate internal energy and heat capacity as a function of temperature and we verify that have two jumps as are reported in literature for the bulk; there are many results of bulk or surface effects of FeCo, but no enough results about ferromagnetic FeCo thin films and this fact does this work interesting.

  13. Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

    Science.gov (United States)

    Palumbo, V.; Marchesi, M.; Chiesi, V.; Paci, D.; Iuliano, P.; Toia, F.; Casoli, F.; Ranzieri, P.; Albertini, F.; Morelli, M.

    2013-01-01

    This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8" silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

  14. Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator

    Directory of Open Access Journals (Sweden)

    Albertini F.

    2013-01-01

    Full Text Available This work deals with a cobalt-based alloy thin film magnetic concentrator (MC which is fully integrated on a Hall sensor integrated circuit (IC developed in the 0.35 µm Bipolar CMOS DMOS (BCD technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.

  15. Enhanced coercivity of HCP Co–Pt alloy thin films on a glass substrate at room temperature for patterned media

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Y.S. [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Sun, An-Cheng, E-mail: acsun@saturn.yzu.edu.tw [Department of Chemical Engineering and Materials Science, Yuan-Ze University, Chung-Li 32003, Taiwan (China); Lee, H.Y. [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 300, Taiwan (China); Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan (China); Lu, Hsi-Chuan; Wang, Sea-Fue [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Sharma, Puneet [School of Physics and Materials Science, Thapar University, Patiala (India)

    2015-10-01

    High coercivity (H{sub c}) Co-rich type Co–Pt alloy thin films with a columnar grain structure were deposited at room temperature (RT) by magnetron sputtering. Films with a thickness (t) of up to 10 nm had a FCC structure and exhibited soft magnetic properties. When t>25 nm, the magnetic anisotropy changed from in-plane to isotropic. H{sub c} was also enhanced with increasing t and found to be maximum at t=50 nm. The in-plane and out-of-plane H{sub c} of the film was 2.2 and 2.7 kOe, respectively. Further increasing t led to a slight decrease in H{sub c}. Microstructure and phase structure studies revealed columnar Co–Pt grains with a uniform lateral size grown on a 7 nm initial layer. Films with t>25 nm showed a HCP phase, due to the internal stress and volume effect. The microstructural details responsible for the enhanced RT magnetic properties of the HCP Co–Pt alloy thin films were investigated by TEM. - Highlights: • Deposited Co–Pt alloy thin films on glass substrate at room temperature. • High out-of-plane coercivity of Co-rich type Co–Pt thin film at thinner thickness. • Columnar structure contributed out-of-plane coercivity.

  16. Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy inducedby MgO-interfaces

    OpenAIRE

    高村, 陽太; Takamura, Yota; 鈴木, 隆寛; Suzuki, Takahiro; 藤野, 頼信; Fujino, Yorinobu; 中川, 茂樹; Nakagawa, Shigeki

    2014-01-01

    A 100-nm-thick L21-ordered full-Heusler Co2FeSi (CFS) alloy film was fabricated using the facing targets sputtering (FTS) method at a substrate temperature TS of 300 ºC. The degrees of L21- and B2-order for the film were 37% and 96%, respectively. In addition, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by the magnetic anisotropy of MgO-interfaces were also successfully fabricated using the FTS method. The CFS/MgO stacked layers exhibited PMA when th...

  17. Tuning the Band Gap of Cu₂ZnSn(S,Se)₄ Thin Films via Lithium Alloying.

    Science.gov (United States)

    Yang, Yanchun; Kang, Xiaojiao; Huang, Lijian; Pan, Daocheng

    2016-03-02

    Alkali metal doping plays a crucial role in fabricating high-performance Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this study, we report the first experimental observation and characterizations of the alloyed Li(x)Cu(2-x)ZnSn(S,Se)4 thin films. It is found that Cu(+) ions in Cu2ZnSn(S,Se)4 thin films can be substituted with Li(+) ions, forming homogeneous Li(x)Cu(2-x)ZnSn(S,Se)4 (0 ≤ x ≤ 0.29) alloyed thin films. Consequently, the band gap, conduction band minimum, and valence band maximum of Li(x)Cu(2-x)ZnSn(S,Se)4 thin films are profoundly affected by Li/Cu ratios. The band alignment at the Li(x)Cu(2-x)ZnSn(S,Se)4/CdS interface can be tuned by changing the Li/Cu ratio. We found that the photovoltaic parameters of the Li(x)Cu(2-x)ZnSn(S,Se)4 solar cell devices are strongly influenced by the Li/Cu ratios. Besides, the lattice constant, carrier concentration, and crystal growth of Li(x)Cu(2-x)ZnSn(S,Se)4 thin films were studied in detail.

  18. First principles investigation of the activity of thin film Pt, Pd and Au surface alloys for oxygen reduction

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir; Hansen, Heine Anton; Rossmeisl, Jan

    2015-01-01

    Further advances in fuel cell technologies are hampered by kinetic limitations associated with the sluggish cathodic oxygen reduction reaction. We have investigated a range of different formulations of binary and ternary Pt, Pd and Au thin films as electrocatalysts for oxygen reduction. The most...... active binary thin films are near-surface alloys of Pt with subsurface Pd and certain PdAu and PtAu thin films with surface and/or subsurface Au. The most active ternary thin films are with pure metal Pt or Pd skins with some degree of Au in the surface and/or subsurface layer and the near-surface alloys....... This is particularly challenging for alloys containing Au due to a high propensity of Au to segregate to the surface. We also show that once Au is on the surface it will diffuse to defect sites, explaining why small amounts of Au retard dissolution of Pt nanoparticles. For the PtPd thin films there is no pronounced...

  19. First principles investigation of the activity of thin film Pt, Pd and Au surface alloys for oxygen reduction

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir; Hansen, Heine Anton; Rossmeisl, Jan;

    2015-01-01

    active binary thin films are near-surface alloys of Pt with subsurface Pd and certain PdAu and PtAu thin films with surface and/or subsurface Au. The most active ternary thin films are with pure metal Pt or Pd skins with some degree of Au in the surface and/or subsurface layer and the near-surface alloys...... of Au with mixed Pt/Pd skins. The activity of the binary and ternary catalysts is explained through weakening of the OH binding energy caused by solute elements. However, given the low alloy formation energies it may be difficult to tune and retain the composition under operating conditions....... This is particularly challenging for alloys containing Au due to a high propensity of Au to segregate to the surface. We also show that once Au is on the surface it will diffuse to defect sites, explaining why small amounts of Au retard dissolution of Pt nanoparticles. For the PtPd thin films there is no pronounced...

  20. The correlation of electrical conductivity with the microstructure of Ge2Sb2Te5 thin films alloyed with Sn

    Science.gov (United States)

    Yin, Qixun; Chen, Leng

    2017-01-01

    In this research, the effects of Sn alloying on structure transformation and electrical characteristics of Ge2Sb2Te5 (GST) thin films were studied. It was discovered that the SnTe phase formed in GST thin films when Sn content exceeded 26 at%, and the addition of Sn atoms expanded the lattice parameter, as a result of atomic radii difference between Ge and Sn atoms. Furthermore, temperature dependent sheet resistance measurements on the GST:Sn thin films were performed for the electrical characteristics to be studied. Sn substitution fraction of 16 at% was discovered to maximize the crystallization temperature of GST thin films. Compared to the GST thin films, crystallization temperature difference and lower amorphous resistance of the GST:Sn thin films were mainly due to lower bonding energy of Sn–Te. Moreover, the amorphous conductivity activation energies (E σ) corresponding to different grain sizes were calculated with the Arrhenius equation. The E σ value of GST:Sn thin films decreased significantly as the Sn content increased due to grain size effects, which appears to improve the temperature stability of conductivity of phase change memory.

  1. A study on the electrodeposition of NiFe alloy thin films using chronocoulometry and electrochemical quartz crystal microgravimetry

    CERN Document Server

    Myung, N S

    2001-01-01

    Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

  2. Controlled Electrochemical Synthesis Of Giant Magnetostrictive Iron-Gallium Alloy Thin Films And Nanowires

    Science.gov (United States)

    Reddy, Kotha Sai Madhukar

    Magnetostrictive Galfenol (Fe1-xGax, x = 10%--40%) alloys have generated tremendous interest in recent times because of their potential as functional materials in various micro- and nano-electromechanical systems (MEMS/NEMS)-based transducers and sensors. Among the giant magnetostrictive alloys, Terfenol-D (Tb1-xDyxFe2) has the largest magnetostriction, but its brittle nature limits its applications. In contrast, the next best magnetostrictive alloy, Galfenol, is highly malleable and ductile while having the tensile strength of Iron. Electrochemistry is an economical route to fabricate 'very thick' films (upto several microns) or high-aspect ratio structures like nanowire arrays. However, the highly electropositive nature of gallium makes it very difficult to electrodeposit from aqueous solutions, similar in behavior to other non-ideal elements like molybdenum, phosphorus, tungsten etc. As a result, Fe1-xGa x alloy plating has been severely plagued by non-repeatability in compositions from growth to growth, lack of uniformity in filling of pores when growing nanowires in nanoporous templates, undesired secondary hydrogen evolution reactions etc. In this study, a thorough understanding of the complex interplay between various deposition parameters (pH, overpotential, concentration, hydrodynamic conditions) was achieved, leading to an understanding of the deposition mechanism itself, thus allowing excellent control and ability to tune the alloy compositions. Arrays of nanowires were fabricated with alternating segments of the magnetostrictive alloy Fe1-xGax and Cu in nanoporous anodic aluminum oxide (AAO) templates. A novel rotating disk electrode-template (designed in-house) was used to optimize the nanowire length distributions by controlling the various aspects of electrodeposition like nucleation, kinetics and mass-transfer. Extensive structural characterization was done by X-ray diffraction (XRD), electron backscatter diffraction (EBSD) and transmission electron

  3. Structural properties of calcogenic thin films and alloys subjected to synchrotron light; Propriedades estruturais de ligas e filmes finos calcogenicos submetidos a luz sincrotron

    Energy Technology Data Exchange (ETDEWEB)

    Moura, P.R.; Almeida, D.P.; Lima, J.C. de; Campos, C.E.M. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil). Dept. de Fisica; Ponciano, C.R. [Pontificia Univ. Catolica do Rio de Janeiro (PUC-Rio), RJ (Brazil). Dept. de Fisica

    2009-07-01

    Results on structural characterization of Sb{sub 50}Te{sub 50} and Te{sub 24}In{sub 38}Sb{sub 38} alloys prepared as powder and after deposited as a thin films are presented. For that x ray diffraction and energy dispersive X-ray fluorescence were used. The nanocrystalline phases Sb{sub 2}Te{sub 2} and Sb{sub 24}Te{sub 9} were nucleated in both Sb{sub 50}Te{sub 50} and Te{sub 24}In{sub 38}Sb{sub 38} alloys, respectively. The thin films of both binary and ternary alloys are mainly amorphous. According to X-ray fluorescence results the chemical composition inside the ultraviolet irradiated region on one of the binary thin film become different than that outside irradiation marks, suggesting Sb migration. (author)

  4. Laser-induced diffusion decomposition in Fe–V thin-film alloys

    Energy Technology Data Exchange (ETDEWEB)

    Polushkin, N.I., E-mail: nipolushkin@fc.ul.pt [Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisboa (Portugal); Instituto de Ciência e Engenharia de Materiais e Superfícies, 1049-001 Lisboa (Portugal); Duarte, A.C.; Conde, O. [Departamento de Física, Faculdade de Ciências, Universidade de Lisboa, 1749-016 Lisboa (Portugal); Instituto de Ciência e Engenharia de Materiais e Superfícies, 1049-001 Lisboa (Portugal); Alves, E. [Associação Euratom/IST e Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisboa (Portugal); Barradas, N.P. [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela LRS (Portugal); García-García, A.; Kakazei, G.N.; Ventura, J.O.; Araujo, J.P. [Departamento de Física, Universidade do Porto e IFIMUP, 4169-007 Porto (Portugal); Oliveira, V. [Instituto de Ciência e Engenharia de Materiais e Superfícies, 1049-001 Lisboa (Portugal); Instituto Superior de Engenharia de Lisboa, 1959-007 Lisboa (Portugal); Vilar, R. [Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisboa (Portugal); Instituto de Ciência e Engenharia de Materiais e Superfícies, 1049-001 Lisboa (Portugal)

    2015-05-01

    Highlights: • Irradiation of an Fe–V alloy by femtosecond laser triggers diffusion decomposition. • The decomposition occurs with strongly enhanced (∼4 orders) atomic diffusivity. • This anomaly is associated with the metallic glassy state achievable under laser quenching. • The ultrafast diffusion decomposition is responsible for laser-induced ferromagnetism. - Abstract: We investigate the origin of ferromagnetism induced in thin-film (∼20 nm) Fe–V alloys by their irradiation with subpicosecond laser pulses. We find with Rutherford backscattering that the magnetic modifications follow a thermally stimulated process of diffusion decomposition, with formation of a-few-nm-thick Fe enriched layer inside the film. Surprisingly, similar transformations in the samples were also found after their long-time (∼10{sup 3} s) thermal annealing. However, the laser action provides much higher diffusion coefficients (∼4 orders of magnitude) than those obtained under standard heat treatments. We get a hint that this ultrafast diffusion decomposition occurs in the metallic glassy state achievable in laser-quenched samples. This vitrification is thought to be a prerequisite for the laser-induced onset of ferromagnetism that we observe.

  5. Nobel metal alloyed thin-films with optical properties on demand

    Science.gov (United States)

    Gong, Chen; Leite, Marina S.

    Metallic materials with tunable optical responses can enable the unprecedented control of optoelectronic and nanophotonic devices with enhanced performance, such as thin-film solar cells, metamaterials and metasurfaces for tunable absorbers and optical filters, among others. Here we present the alloying of noble metals, Ag, Au and Cu, to develop a novel class of material with optical response not achieved by pure metals. We fabricate binary mixtures with controlled chemical composition by co-sputtering. Ellipsometry and surface plasmon polariton coupling angle measurements are in excellent agreement when determining the real part of the dielectric function (ɛ1). Surprisingly, in some cases, a mixture provides a material with higher surface plasmon polariton quality factor than the corresponding pure metals. Our approach paves the way to implement metallic nanostructures with tunable absorption/transmission, overcoming the current limitation of the dielectric function of noble metals.

  6. Structural and optical characterization of 1 µm of ternary alloy ZnCuSe thin films

    Science.gov (United States)

    Shaaban, E. R.; Hassan, H. Shokry; Aly, S. A.; Elshaikh, H. A.; Mahasen, M. M.

    2016-08-01

    Different compositions of Cu-doped ZnSe in ternary alloy Zn1- x Cu x Se thin films (with x = 0, 0.025, 0.05, 0.075 and 0.10) were evaporated (thickness 1 µm) onto glass substrate using electron beam evaporation method. The X-ray diffraction analysis for both powder and films indicated their polycrystalline nature with zinc blende (cubic) structure. The crystallite size was found to increase, while the lattice microstrain was decreased with increasing Cu dopant. The optical characterization of films was carried out using the transmittance spectra, where the refractive indices have been evaluated in transparent and medium transmittance regions using the envelope method, suggested by Swanepoel. The refractive index has been found to increase with increasing Cu content. The dispersion of refractive index has been analyzed in terms of the Wemple-DiDomenico single-oscillator model. The oscillator parameters, the single-oscillator energy E o, the dispersion energy E d and the static refractive index n 0, were estimated. The optical band gap was determined in strong absorption region of transmittance spectra and was found to increase from 2.702 to 2.821 eV with increasing the Cu content. This increase in the band gap was well explained by the Burstein-Moss effect.

  7. Polycrystalline GeSn thin films on Si formed by alloy evaporation

    Science.gov (United States)

    Kim, Munho; Fan, Wenjuan; Seo, Jung-Hun; Cho, Namki; Liu, Shih-Chia; Geng, Dalong; Liu, Yonghao; Gong, Shaoqin; Wang, Xudong; Zhou, Weidong; Ma, Zhenqiang

    2015-06-01

    Polycrystalline GeSn thin films on Si substrates with a Sn composition up to 4.5% have been fabricated and characterized. The crystalline structure, surface morphology, and infrared (IR) absorption coefficient of the annealed GeSn thin films were carefully investigated. It was found that the GeSn thin films with a Sn composition of 4.5% annealed at 450 °C possessed a desirable polycrystalline structure according to X-ray diffraction (XRD) analyses and Raman spectroscopy analyses. In addition, the absorption coefficient of the polycrystalline GeSn thin films in the IR region was significantly better than that of the single crystalline bulk Ge.

  8. Abnormal infrared effects of nanometer scale thin film material of PtPd alloy in CO adsorption

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanometer scale thin film material of PtPd alloy supported on glassy carbon (nm-PtPd/GC) was prepared by the electrochemical codeposition method under cyclic voltammetric conditions. STM patterns demonstrated that the prepared thin films are composed of layered crystallites in elliptic form. Electrochemical in situ FTIRS studies explored the abnormal infrared effects (AIREs) of nmPtPd/GC for CO adsorption, which are ( i ) the remarkable enhancement of IR absorption, (ii) the inversion of COad band direction, and (iii) notable increase in the full width at half maximum (FWHM) of COad bands. The results demonstrated also that the enhancement factor of IR absorption varies with the thickness of PtPd alloy film and has reached a maximum value of 38.3 under the experimental conditions.

  9. Growth of Ni and Ni-Cr alloy thin films on MgO(001): Effect of alloy composition on surface morphology

    Science.gov (United States)

    Ramalingam, Gopalakrishnan; Reinke, Petra

    2016-12-01

    The effects of substrate treatment, growth temperature, and composition on the surface morphology of Ni-Cr thin films grown on MgO(001) are studied by scanning tunneling microscopy and atomic force microscopy. We demonstrate that a combination of acid-etched substrates and high temperature deposition (400 °C) will result in smooth films with well-defined terraces (up to 30 nm wide) that are suitable for the study of progression of chemical reactions on the surface. Two different treatments are used to prepare the MgO substrates for deposition and they introduce characteristic differences in film surface morphology. Thin films that are grown on the phosphoric acid-treated substrates present reduced nucleation density during the initial stages of film growth which results in long and wide terraces. Due to the ≈16% lattice mismatch in the Ni(001)/MgO(001) system, film growth at 400 °C yields discontinuous films and a two-step growth process is necessary to obtain a continuous layer. Ni films are deposited at 100 °C and subjected to a post-growth annealing at 300 °C for 2 h to obtain a smoother surface. The addition of just 5 wt. % Cr drastically changes the film growth processes and yields continuous films at 400 °C without de-wetting in contrast to pure Ni films. With increasing Cr content, the films become progressively smoother with wider terraces. Ni5Cr alloy thin films have an rms surface roughness of 3.63 ± 0.75 nm, while Ni33Cr thin film is smoother with an rms roughness of only 0.29 ± 0.13 nm. The changes in film growth initiated by alloying with Cr are due to changes in the interfacial chemistry which favorably alters the initial adsorption of the metal atoms on MgO surface and suggests a reduction of the Ehrlich-Schwoebel barrier. The growth of smooth Ni-Cr thin films with a well-defined surface structure opens up a new pathway for a wide range of surface science studies related to alloy performance.

  10. Exploring Cd-Zn-O-S alloys for optimal buffer layers in thin-film photovoltaics

    Science.gov (United States)

    Varley, J.; He, X.; Mackie, N.; Rockett, A.; Lordi, V.

    2015-03-01

    The development of thin-film photovoltaics has largely focused on alternative absorber materials, while the choices for other layers in the solar cell stack have remained somewhat limited. In particular, cadmium sulfide (CdS) is widely used as the buffer layer in typical record devices utilizing absorbers like Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSnS4 (CZTS) despite leading to a loss of solar photocurrent due to its band gap of 2.4 eV. While different buffers such as Zn(S,O,OH) are beginning to become competitive with CdS, the identification of additional wider-band gap alternatives with electrical properties comparable to or better than CdS is highly desirable. Here we use hybrid functional calculations to characterize CdxZn1-xOyS1-y candidate buffer layers in the quaternary phase space composed by Cd, Zn, O, and S. We focus on the band gaps and band offsets of the alloys to assess strategies for improving absorption losses from conventional CdS buffers while maintaining similar conduction band offsets known to facilitate good device performance. We also consider additional criteria such as lattice matching to identify regions in the composition space that may provide improved epitaxy to CIGSe and CZTS absorbers. Lastly, we incorporate our calculated alloy properties into simulations of typical CIGSe devices to identify the CdxZn1-xOyS1-y buffer compositions that lead to the best performance. This work performed under the auspices of the USDoE by LLNL under Contract DE-AC52-07NA27344 and funded by the DoE EERE through the SunShot BRIDGE program.

  11. Composition-structure-function diagrams of Ti-Ni-Au thin film shape memory alloys.

    Science.gov (United States)

    Buenconsejo, Pio John S; Ludwig, Alfred

    2014-12-08

    Ti-Ni-Au thin film materials libraries were prepared from multilayer precursors by combinatorial sputtering. The materials libraries were annealed at 500, 600, and 700 °C for 1 h and then characterized by high-throughput methods to investigate the relations between composition, structure and functional properties. The identified relations were visualized in functional phase diagrams. The goal is to identify composition regions that are suitable as high temperature shape memory alloys. Phase transforming compositions were identified by electrical resistance measured during thermal cycles in the range of -20 and 250 °C. Three phase transformation paths were confirmed: (1) B2-R, (2) B2-R-B19', and (3) B2-B19. For the materials library annealed at 500 °C only the B2-R transformation was observed. For the materials libraries annealed at 600 and 700 °C, all transformation paths were observed. High transformation temperatures (M(s) ≈ 100 °C) were only obtained by annealing at 600 or 700 °C, and with compositions of Ti ≈ 50 at. % and Au > 20 at. %. This is the composition range that undergoes B2-B19 transformation. The phase transformation behaviors were explained according to the compositional and annealing temperature dependence of phase/structure formation, as revealed by X-ray diffraction analysis of the materials libraries.

  12. Enhanced coercivity of HCP Co-Pt alloy thin films on a glass substrate at room temperature for patterned media

    Science.gov (United States)

    Chen, Y. S.; Sun, An-Cheng; Lee, H. Y.; Lu, Hsi-Chuan; Wang, Sea-Fue; Sharma, Puneet

    2015-10-01

    High coercivity (Hc) Co-rich type Co-Pt alloy thin films with a columnar grain structure were deposited at room temperature (RT) by magnetron sputtering. Films with a thickness (t) of up to 10 nm had a FCC structure and exhibited soft magnetic properties. When t>25 nm, the magnetic anisotropy changed from in-plane to isotropic. Hc was also enhanced with increasing t and found to be maximum at t=50 nm. The in-plane and out-of-plane Hc of the film was 2.2 and 2.7 kOe, respectively. Further increasing t led to a slight decrease in Hc. Microstructure and phase structure studies revealed columnar Co-Pt grains with a uniform lateral size grown on a 7 nm initial layer. Films with t>25 nm showed a HCP phase, due to the internal stress and volume effect. The microstructural details responsible for the enhanced RT magnetic properties of the HCP Co-Pt alloy thin films were investigated by TEM.

  13. The Microstructures and Electrical Resistivity of (Al, Cr, TiFeCoNiOx High-Entropy Alloy Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Chun-Huei Tsau

    2015-01-01

    Full Text Available The (Al, Cr, TiFeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOx films was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

  14. Thickness dependent phase transformation of magnetron-sputtered Ni-Mn-Sn ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vishnoi, Ritu; Singhal, Rahul; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Laboratory, Department of Physics and Center of Nanotechnology (India)

    2011-09-15

    In this study, the influence of film thickness on the first-order martensite-austenite phase transformation of Ni-Mn-Sn ferromagnetic shape memory alloy thin films has been systematically investigated. Different thicknesses of the Ni-Mn-Sn films (from {approx}100 to 2,500 nm) were deposited by DC magnetron sputtering on Si (100) substrates at 550 Degree-Sign C. X-ray analysis reveals that all the films exhibit austenitic phase with the L2{sub 1} cubic crystal structure at room temperature. The grain size and crystallization extent increase with the increase in film thickness, but the films with thickness above {approx}1,400 nm show structural deterioration due to the formation of MnSn{sub 2} and Ni{sub 3}Sn{sub 4} precipitates. The improvement in the crystallinity of the film with thickness is attributed to the decrease in film-substrate interfacial strain resulting in preferred oriented growth of the films. Temperature-dependent magnetization measurements as well as electrical measurements demonstrate the complete absence of phase transformation for the film of thickness of {approx}120 nm. For thickness greater than 400 nm, film exhibits the structural transformation, and it occurs at higher temperature with better hysteresis as film thickness is increased up to {approx}1,400 nm, after which degradation of phase transformation phenomenon is observed. This degradation is attributed to the disorders present in the films at higher thicknesses. Film with thickness {approx}1,400 nm possesses the highest magnetization with the smallest thermal hysteresis among all the films and therefore best suited for the actuators based on first-order structural phase transformation. Nanoindentation measurements reveal that the higher values of hardness and elastic modulus of about 5.5 and 215.0 GPa obtained in film of 1,014 nm thickness can considerably improve the ductility of ferromagnetic shape memory alloys (FSMA) and their applicability for MEMS applications. The exchange bias

  15. Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

    Directory of Open Access Journals (Sweden)

    David J. Rowe

    2014-02-01

    Full Text Available Alloyed silicon-germanium (SiGe nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1−xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films.

  16. MARTENSITE AND REVERSE TRANSFORMATION IN PRESTRAINED TiNi SHAPE MEMORY ALLOY THIN FILM

    Institute of Scientific and Technical Information of China (English)

    X.P. Liu; M.Z. Cao; R. Yang

    2003-01-01

    The effect of pre-strain on phase transformation of TiNi shape memory alloy film was studied by differential scanning calorimeter measurement (DSC). Compared with un deformed TiNi film, the reverse transformation of pre-strained specimens was elevated to a higher temperature on the first heating, but martensite and reverse transforma tion on subsequent thermal cycles occurred at a lower temperature. The evolution of transformation behavior in pre-strained TiNi film was related to the change of elastic strain energy, irreversible energy and internal stress field.

  17. Nonlinear dynamics and bifurcation characteristics of shape memory alloy thin films subjected to in-plane stochastic excitation

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Zhi-Wen [Department of Mechanics, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072 (China); Tianjin Key Laboratory of Nonlinear Dynamics and Chaos Control 92 Weijin Road, Nankai District, Tianjin 300072 (China); Zhang, Qing-Xin [Department of Mechanics, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072 (China); Xu, Jia, E-mail: xujia_ld@163.com [Department of Mechanics, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072 (China)

    2014-11-03

    A kind of shape memory alloy (SMA) hysteretic nonlinear model was developed, and the nonlinear dynamics and bifurcation characteristics of the SMA thin film subjected to in-plane stochastic excitation were investigated. Van der Pol difference item was introduced to describe the hysteretic phenomena of the SMA strain–stress curves, and the nonlinear dynamic model of the SMA thin film subjected to in-plane stochastic excitation was developed. The conditions of global stochastic stability of the system were determined in singular boundary theory, and the probability density function of the system response was obtained. Finally, the conditions of stochastic Hopf bifurcation were analyzed. The results of theoretical analysis and numerical simulation indicate that self-excited vibration is induced by the hysteretic nonlinear characteristics of SMA, and stochastic Hopf bifurcation appears when the bifurcation parameter was changed; there are two limit cycles in the stationary probability density of the dynamic response of the system in some cases, which means that there are two vibration amplitudes whose probabilities are both very high, and jumping phenomena between the two vibration amplitudes appear with the change in conditions. The results obtained in this current paper are helpful for the application of the SMA thin film in stochastic vibration fields. - Highlights: • Hysteretic nonlinear model of shape memory alloy was developed. • Van der Pol item was introduced to interpret hysteretic strain–stress curves. • Nonlinear dynamic characteristics of the shape memory alloy film were analyzed. • Jumping phenomena were observed in the change of the parameters.

  18. Enlarged broad band photodetection using Indium doped TiO{sub 2} alloy thin film

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Mitra Barun [National Institute of Technology Agartala, Department of Electronics and Communication Engineering, Jirania, Tripura (West) 799055 (India); Mondal, Aniruddha, E-mail: aniruddhamo@gmail.com [National Institute of Technology Agartala, Department of Electronics and Communication Engineering, Jirania, Tripura (West) 799055 (India); Choudhuri, Bijit; Mahajan, Bikram Kishore; Chakrabartty, Shubhro [National Institute of Technology Agartala, Department of Electronics and Communication Engineering, Jirania, Tripura (West) 799055 (India); Ngangbam, Chitralekha [National Institute of Technology Manipur, Department of Electronics and Communication Engineering, Takyelpat, Imphal, Manipur 795001 (India)

    2014-12-05

    Highlights: • An easy technique has been used to dope Indium (instantaneous source) into TiO{sub 2} TF. • An inhomogeneous layer of In{sub x}Ti{sub y}O{sub 2} alloy was formed due to doping. • The lattice constant and optical band gap of TiO{sub 2} has increased after In doping. • Enhanced visible light absorption and detection were recorded for In doped TiO{sub 2} TF. • Almost no delay in photo response for In doped photodetector was observed. - Abstract: An instantaneous source of Indium (In) was used to dope the TiO{sub 2} thin film (TF) on the Si substrate. The X-ray diffraction depicted the presence of rutile phases of TiO{sub 2}, which shifted to the lower value 61.7 from 61.9 (2θ). Secondary ion mass spectrometry (SIMS) reveals that the diffusion of Indium ion yield decreases sharply from the surface, as approached toward the TiO{sub 2} TF–Si substrate interface. The bulk diffusion of In into TiO{sub 2} was observed at a depth of 125–200 nm, up to the edge of TiO{sub 2} TF. An inhomogeneous layer of In{sub x}Ti{sub y}O{sub 2} alloy was formed during annealing process. An average of two fold enhanced photo absorption was recorded for the In doped TiO{sub 2} TF in the 300–350 nm and 450–800 nm regions respectively. The main band gap of In doped TiO{sub 2} was increased to 3.4 eV, whereas the large absorption edge was observed at 3.1 eV. The leakage current (34 nA at −0.5 V) of In doped TiO{sub 2} TF detector was significantly reduced. A maximum 2.5 times (−3.5 V) enlarged photodetection has been observed for In doped TiO{sub 2} TF device under white light illumination. The In doped TiO{sub 2} TF detector shows the broad band photodetection, with an infinitesimal delay in its photo response time as compared to undoped TiO{sub 2} TF.

  19. Variation of local atomic structure due to devitrification of Ni-Zr alloy thin films probed by EXAFS measurements

    Science.gov (United States)

    Bhattacharya, Debarati; Tiwari, Nidhi; Bhattacharyya, Dibyendu; Jha, S. N.; Basu, S.

    2016-05-01

    Thin film metallic glasses (TFMGs) exhibit properties superior to their bulk counterparts allowing them to be potentially useful in many practical applications. Apart from their technological interest, when converted to crystallized state (devitrification) TFMGs can also act as precursors for partially crystallized or fully crystallized forms. Such devitrified forms are attractive due to their novel structural and magnetic properties. The amorphous-to-crystalline transformation of co-sputtered Ni-Zr alloy thin films through annealing was studied using EXAFS (Extended X-ray Absorption Fine Structure) measurements. Investigation through an atomic probe gives a better insight into the local environment of the atomic species, rendering a deeper understanding of thermal evolution of such materials.

  20. Structure formation and properties of sputter deposited Nb{sub x}-CoCrCuFeNi high entropy alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Braeckman, B.R., E-mail: bertR.braeckman@ugent.be; Depla, D.

    2015-10-15

    Thin films of the high entropy alloy Nb{sub x}-CoCrCuFeNi with different niobium concentrations were deposited by magnetron sputtering. The film density and the residual stress of the niobium-free (x = 0) thin films clearly decreases at higher pressure-distance products. This behaviour can only be explained by the momentum transfer of the sputtered atoms and the reflected Ar atoms on the growing film as the energy per arriving atom shows little variation. The addition of Nb, which is the heaviest atom of the alloy, amplifies this effect. Hence, thin films with a high Nb content still show a high density at large pressure-distance products. However, as Nb has the largest radius of all constituent elements, the crystallographic structure of the thin films changes from a crystalline face-centred cubic structure at x = 0 to an amorphous (or nanocrystalline) structure for higher Nb fractions. Both trends, i.e. the changing deposition conditions and the niobium content, can be outlined by a study of the thin film microstrain. The trends observed in the intrinsic properties are correlated to a preliminary study of some functional properties (friction coefficient, thermal stability and contact resistance). - Highlights: • Nb{sub x}-CoCrCuFeNi thin films were deposited by sputtering pressed powder targets. • The Nb fraction and deposition conditions influence the intrinsic film properties. • The functional film properties are explained by the momentum transfer concept.

  1. Structural, electrical, and optical properties of ZnInO alloy thin films

    Institute of Scientific and Technical Information of China (English)

    Cai Xi-Kun; Yuan Zi-Jian; Zhu Xia-Ming; Wang Xiong; Zhang Bing-Po; Qiu Dong-Jiang; Wu Hui-Zhen

    2011-01-01

    Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering,and the structural,electrical and optical properties of IZO thin films deposited at different In2O3 target powers are investigated.IZO thin films grown at different In2O3 target sputtering powers show evident morphological variation and different grain sizes.As the In2O3 sputtering power rises,the grain size becomes larger and electrical mobility increases.The film grown with an In2O3 target power of 100 W displays the highest electrical mobility of 13.5 cm.V-1s-1 and the lowest resistivity of 2.4× 10-3 Ω·cm.The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In2O3 target power,which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.

  2. Synthesis of Ge1- x Sn x Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)

    Science.gov (United States)

    Bhatia, A.; Hlaing Oo, W. M.; Siegel, G.; Stone, P. R.; Yu, K. M.; Scarpulla, M. A.

    2012-05-01

    Ge1- x Sn x thin films are interesting for all-group-IV optoelectronics because of a crossover to a direct bandgap with dilute Sn alloying. However, Sn has vanishing room-temperature equilibrium solubility in Ge, making their synthesis very challenging. Herein, we report on our attempts to synthesize Ge1- x Sn x films on Ge (001) using ion implantation and pulsed laser melting (II-PLM). A maximum of 2 at.% Sn was incorporated with our experimental conditions in the samples as determined by Rutherford back scattering spectroscopy. A red-shift in the Ge optical phonon branch and increased absorption below the Ge bandgap with increasing Sn concentration indicate Sn-induced lattice- and band-structure changes after II-PLM. However, ion-channeling and electron microscopy show that the films are not of sufficient epitaxial quality for use in devices.

  3. A Study on the Electrodeposited Cu-Zn Alloy Thin Films

    Science.gov (United States)

    Özdemir, Rasim; Karahan, İsmail Hakkı; Karabulut, Orhan

    2016-11-01

    In this article, electrochemical deposition of the nanocrystalline Cu1- x Zn x alloys on to aluminum substrates from a non-cyanide citrate electrolyte at 52.5, 105, 157.5, and 210 A m-2 current densities were described. The bath solution of the Cu1- x Zn x alloys consisted of 0.08 mol L-1 CuSO4·5H2O, 0.2 mol L-1 ZnSO4·7H2O, and 0.5 mol L-1 Na3C6H5O7. The effect of the current density on the microstrain, grainsize, phase structure, and DC electrical resistivity behavior was investigated. The electrolyte was investigated electrochemically by cyclic voltammetry (CV) studies. A scanning electron microscope (SEM) was used to study the morphologies of the deposits. Deposited alloys were investigated by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and four-point probe electrical resistivity techniques. With an increase in applied current density values from 52.5 to 210 A m-2, the amount of deposited copper in the alloy was decreased significantly from 65.5 to 16.6 pct and zinc increased from 34.4 to 83.4 pct. An increase in the current density was accompanied by an increase in grain size values from 65 to 95 nm. SEM observations indicated that the morphology of the film surface was modified to bigger grained nanostructures by increasing the current density. The XRD analysis showed alloys have a body-centered cubic (bcc) crystal structure with preferential planes of (110) and (211). Furthermore, four-point measurements of the films revealed that the resistivity of the deposited films was tailored by varying current densities in the electrolyte.

  4. Characterization of Magnetron Sputtered Copper-Nickel Thin Film and Alloys

    Science.gov (United States)

    2016-09-01

    1000 °C in a low- pressure chemical vapor deposition (LPCVD) reactor with a gas mixture of 40%H2/60%Ar at 15 Torr pressure to form the final alloys...uniformity of the film improves if the chamber pressure is decreased and/or the distance between target and substrate is increased, we decided to...of 500 W d.c. to improve the deposition rate in order to achieve a film thickness of 1 µm within a reasonable amount of time. Substrate rotation

  5. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  6. Diffusion-controlled Solid State Reactions in Alloys, Thin-Films, and Nanosystems

    CERN Document Server

    Gusak, Andriy M; Lyashenko, Yu O; Kornienko, SV; Pasichnyy, MO; Shirinyan, AS

    2011-01-01

    Written by an outstanding group of applied theoreticians with comprehensive expertise and a wide spectrum of international contacts headed by Prof. A. M. Gusak, this monograph coherently presents the approaches and results hitherto only available in various journal papers. A must-have for all those involved with the public or corporate science of nano systems, thin films and electrical engineering.

  7. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    Directory of Open Access Journals (Sweden)

    Birgit eHebler

    2016-02-01

    Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  8. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    Energy Technology Data Exchange (ETDEWEB)

    Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van; Aarts, J., E-mail: aarts@physics.leidenuniv.nl [Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, P.O. Box 9504, 2300 RA Leiden (Netherlands)

    2014-08-07

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  9. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    Science.gov (United States)

    Verhagen, T. G. A.; Boltje, D. B.; van Ruitenbeek, J. M.; Aarts, J.

    2014-08-01

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo5 composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo5-like to a Sm2Co7-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  10. A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

    Directory of Open Access Journals (Sweden)

    Ruei-Cheng Lin

    2015-01-01

    Full Text Available Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3 substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2 casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, and Auger electron spectroscopy (AES. When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3 phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR.

  11. Martensitic phase transformations and magnetocaloric effect in Al co-sputtered Ni–Mn–Sb alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akkera, Harish Sharma [Functional Nanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand 247667 (India); Choudhary, Nitin [Department of Materials Science and Engineering, University of North Texas, North Texas Discovery Park, 3940 North Elm St., Denton, TX 76207 (United States); Kaur, Davinder, E-mail: dkaurfph@iitr.ac.in [Functional Nanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand 247667 (India)

    2015-08-15

    Highlights: • The Al content leads to a increase in the martensitic transformation temperature. • A maximum ΔS{sub M} = 23 mJ/cm{sup 3} K at 300 K was observed in the N{sub 49.8}Mn{sub 32.97}Al{sub 4.43}Sb{sub 12.8}. • The refrigeration capacity RC = 64.4 mJ/cm{sup 3} at 2 T for N{sub 49.8}Mn{sub 32.97}Al{sub 4.43}Sb{sub 12.8} film. - Abstract: We systematically investigated the influence of aluminium (Al) content on the martensitic transformations and magnetocaloric effect (MCE) in Ni–Mn–Sb ferromagnetic shape memory alloy (FSMA) thin films. The temperature-dependent magnetization (M–T) and resistance (R–T) results displayed a monotonic increase in martensitic transformation temperature (T{sub M}) with increasing Al content. From the isothermal magnetization (M–H) curves, a large magnetic entropy change (ΔS{sub M}) of 23 mJ/cm{sup 3} K was observed in N{sub 49.8}Mn{sub 32.97}Al{sub 4.43}Sb{sub 12.8}. A remarkable enhancement of MCE could be attributed to the significant change in the magnetization of Ni–Mn–Sb films with increasing Al content. Furthermore, a high refrigerant capacity (RC) was observed in Ni–Mn–Sb–Al thin films as compared to pure Ni–Mn–Sb. The substitution of Al for Mn in Ni–Mn–Sb thin films with field induced MCE are potential candidates for micro length scale magnetic refrigeration applications where low magnetic fields are desirable.

  12. Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interface

    OpenAIRE

    Takamura, Yota; Suzuki, Takahiro; Fujino, Yorinobu; Nakagawa, Shigeki

    2013-01-01

    The authors demonstrated that L21-ordered full-Heusler Co2FeSi (CFS) alloy film with thickness of 100 nm were formed by facing targets sputtering (FTS) method at a substrate temperature TS = 300 deg C. Degrees of L21- and B2- order for the film were 0.37, and 0.96, respectively. Furthermore, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by MgO-interface magnetic anisotropy were successfully formed by the FTS method. The CFS/MgO stacking layers showed P...

  13. Aluminum–Titanium Alloy Back Contact Reducing Production Cost of Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Hsin-Yu Wu

    2016-11-01

    Full Text Available In this study, metal films are fabricated by using an in-line reactive direct current magnetron sputtering system. The aluminum–titanium (AlTi back contacts are prepared by changing the pressure from 10 mTorr to 25 mTorr. The optical, electrical and structural properties of the metal back contacts are investigated. The solar cells with the AlTi had lower contact resistance than those with the silver (Ag back contact, resulting in a higher fill factor. The AlTi contact can achieve a solar cell conversion efficiency as high as that obtained from the Ag contact. These findings encourage the potential adoption of AlTi films as an alternative back contact to silver for silicon thin-film solar cells.

  14. The Effect of Cu:Ag Atomic Ratio on the Properties of Sputtered Cu–Ag Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Janghsing Hsieh

    2016-11-01

    Full Text Available Cu–Ag thin films with various atomic ratios were prepared using a co-sputtering technique, followed by rapid thermal annealing at various temperatures. The films’ structural, mechanical, and electrical properties were then characterized using X-ray diffractometry (XRD, atomic force microscopy (AFM, FESEM, nano-indentation, and TEM as functions of compositions and annealing conditions. In the as-deposited condition, the structure of these films transformed from a one-phase to a dual-phase state, and the resistivity shows a twin-peak pattern, which can be explained in part by Nordheim’s Rule and the miscibility gap of Cu–Ag alloy. After being annealed, the films’ resistivity followed the mixture rule in general, mainly due to the formation of a dual-phase structure containing Ag-rich and Cu-rich phases. The surface morphology and structure also varied as compositions and annealing conditions changed. The recrystallization of these films varied depending on Ag–Cu compositions. The annealed films composed of 40 at % to 60 at % Cu had higher hardness and lower roughness than those with other compositions. Particularly, the Cu50Ag50 film had the highest hardness after being annealed. From the dissolution testing, it was found that the Cu-ion concentration was about 40 times higher than that of Ag. The galvanic effect and over-saturated state could be the cause of the accelerated Cu dissolution and the reduced dissolution of the Ag.

  15. Band gap engineering of zinc selenide thin films through alloying with cadmium telluride.

    Science.gov (United States)

    Al-Kuhaili, M F; Kayani, A; Durrani, S M A; Bakhtiari, I A; Haider, M B

    2013-06-12

    This work investigates band gap engineering of zinc selenide (ZnSe) thin films. This was achieved by mixing ZnSe with cadmium telluride (CdTe). The mass ratio (x) of CdTe in the starting material was varied in the range x = 0-0.333. The films were prepared using thermal evaporation. The chemical composition of the films was investigated through energy dispersive spectroscopy and Rutherford backscattering spectrometry. Structural analysis was carried out using X-ray diffraction and atomic force microscopy. Normal incidence transmittance and reflectance were measured over the wavelength range 300-1300 nm. The absorption coefficients and band gaps were determined from these spectrophotometric measurements. The band gap monotonically decreased from 2.58 eV (for x = 0) to 1.75 eV (for x = 0.333). Photocurrent measurements indicated that the maximum current density was obtained for films with x = 0.286. A figure of merit, based on crystallinity, band gap, and photocurrent, was defined. The optimum characteristics were obtained for the films with x = 0.231, for which the band gap was 2.14 eV.

  16. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  17. FePtCu alloy thin films: Morphology, L1{sub 0} chemical ordering, and perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, C.; Schletter, H.; Daniel, M.; Matthes, P.; Joehrmann, N.; Makarov, D.; Hietschold, M.; Albrecht, M. [Institute of Physics, Chemnitz University of Technology, D-09107 Chemnitz (Germany); Maret, M. [Laboratory of Science and Engineering of Materials and Processes (SIMaP), INP-Grenoble/CNRS/UJF, F-38402 Saint-Martin d' Heres (France)

    2012-10-01

    Rapid thermal annealing was applied to transform sputter-deposited Fe{sub 51}Pt{sub 49}/Cu bilayers into L1{sub 0} chemically ordered ternary (Fe{sub 51}Pt{sub 49}){sub 100-x}Cu{sub x} alloys with (001) texture on amorphous SiO{sub 2}/Si substrates. It was found that for thin film samples, which were processed at 600 Degree-Sign C for 30 s, the addition of Cu strongly favors the L1{sub 0} ordering and (001) texture formation. Furthermore, it could be revealed by transmission electron microscopy and electron backscatter diffraction that the observed reduction of the ordering temperature with Cu content is accompanied by an increased amount of nucleation sites forming L1{sub 0} ordered grains. The change of the structural properties with Cu content and annealing temperature is closely related to the magnetic properties. While an annealing temperature of 800 Degree-Sign C induces strong perpendicular magnetic anisotropy (PMA) in binary Fe{sub 51}Pt{sub 49} films, the addition of Cu systematically reduces the PMA. However, due to the enhancement of both the A1-L1{sub 0} phase transformation and the development of the (001) texture with increasing Cu content, lowering of the annealing temperature leads to a shift of the maximum perpendicular magnetic anisotropy towards alloys with higher Cu content. Thus, for an annealing temperature of 600 Degree-Sign C, the highest perpendicular magnetic anisotropy energy is found for the (Fe{sub 51}Pt{sub 49}){sub 91}Cu{sub 9} alloy. The smooth surface morphology, adjustable PMA, and high degree of intergranular exchange coupling make these films suitable for post-processing required for specific applications such as for sensorics or magnetic data storage.

  18. Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth

    Science.gov (United States)

    2016-02-01

    10. SPONSOR/MONITOR’S ACRONYM(S) 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 12. DISTRIBUTION/AVAILABILITY STATEMENT Approved for public release... morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen...Ni thin film a) sputtered at 5 mT and 25 °C and b) sputtered at 15 mT and 400 °C 3.2 Grain Growth Characterization The morphology of the as

  19. Thin film heterojunction CdS/Cu ternary alloys solar cells with minority carrier mirrors

    Science.gov (United States)

    Kwietniak, M.; Loferski, J. J.; Beaulieu, R.; Arya, R. R.; Vera, E.; Kazmerski, L.

    A new concept in the fabrication of thin film solar cells with a multilayer structure in which the base region contains a minority carrier mirror (MCM) is reported. The theory of heterojunctions employing CdS as a wide bandgap window and layers of CulnSe2 and CuGaSe(0.9)Te(1.1) with MCM as the photovoltaically active semiconductor is presented. A first cell of this type was made by rf-sputtering the successive layers; its AM1 efficiency was about 4 percent.

  20. Fabrication of Thermoelectric Sensor and Cooling Devices Based on Elaborated Bismuth-Telluride Alloy Thin Films

    Directory of Open Access Journals (Sweden)

    Abdellah Boulouz

    2014-01-01

    Full Text Available The principal motivation of this work is the development and realization of smart cooling and sensors devices based on the elaborated and characterized semiconducting thermoelectric thin film materials. For the first time, the details design of our sensor and the principal results are published. Fabrication and characterization of Bi/Sb/Te (BST semiconducting thin films have been successfully investigated. The best values of Seebeck coefficient (α(T at room temperature for Bi2Te3, and (Bi1−xSbx2Te3 with x = 0.77 are found to be −220 µV/K and +240 µV/K, respectively. Fabrication and evaluation of performance devices are reported. 2.60°C of cooling of only one Peltier module device for an optimal current of Iopt=2.50 mA is obtained. The values of temperature measured by infrared camera, by simulation, and those measured by the integrated and external thermocouple are reported. A sensitivity of the sensors of 5 mV Torr−1 mW−1 for the pressure sensor has been found with a response time of about 600 ms.

  1. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  2. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  3. Microstructure of epitaxial thin films of the ferromagnetic shape memory alloy Ni{sub 2}MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Eichhorn, Tobias

    2011-12-09

    This work is concerned with the preparation and detailed characterization of epitaxial thin films of the Heusler compound Ni{sub 2}MnGa. This multiferroic compound is of both technological and scientific interest due to the outstanding magnetic shape memory (MSM) behavior. Huge magnetic-field-induced strains up to 10 % have been observed for single crystals close to a Ni{sub 2}MnGa composition. The effect is based on a redistribution of crystallographic twin variants of tetragonal or orthorhombic symmetry. Under the driving force of the external magnetic field twin boundaries can move through the crystal, which largely affects the macroscopic shape. The unique combination of large reversible strain, high switching frequency and high work output makes the alloy a promising actuator material. Since the MSM effect results from an intrinsic mechanism, MSM devices possess great potential for implementation in microsystems, e.g. microfluidics. So far significant strains, in response to an external magnetic field, have been observed for bulk single crystals and foams solely. In order to take advantage of the effect in applications concepts for miniaturization are needed. The rather direct approach, based on epitaxial thin films, is explored in the course of this work. This involves sample preparation under optimized deposition parameters and fabrication of freestanding single-crystalline films. Different methods to achieve freestanding microstructures such as bridges and cantilevers are presented. The complex crystal structure is extensively studied by means of X-ray diffraction. Thus, the different crystallographic twin variants that are of great importance for the MSM effect are identified. In combination with microscopy the twinning architecture for films of different crystallographic orientation is clarified. Intrinsic blocking effects in samples of (100) orientation are explained on basis of the variant configuration. In contrast, a promising twinning microstructure

  4. Quantitative analysis of reflection electron energy loss spectra to determine electronic and optical properties of Fe–Ni alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tahir, Dahlang, E-mail: dtahir@fmipa.unhas.ac.id [Department of Physics, Hasanuddin University, Makassar 90245 (Indonesia); Oh, Sukh Kun [Department of Physics, Chungbuk National University, Cheongju 362-763 (Korea, Republic of); Kang, Hee Jae, E-mail: hjkang@cbu.ac.kr [Department of Physics, Chungbuk National University, Cheongju 362-763 (Korea, Republic of); Tougaard, Sven, E-mail: svt@sdu.dk [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, Odense M, Odense DK-5230 (Denmark)

    2016-01-15

    Highlights: • Electronic and optical properties of Fe-Ni alloy thin films grown on Si (1 0 0) were studied via quantitative analyses of reflection electron energy loss spectra (REELS). • The energy loss functions (ELF) are dominated by a plasmon peak at 23.6 eV for Fe and moves gradually to lower energies in Fe-Ni alloys towards the bulk plasmon energy of Ni at 20.5 eV. • Fe has a strong effect on the dielectric and optical properties of Fe-Ni alloy thin films even for an alloy with 72% Ni. Electronic and optical properties of Fe-Ni alloy thin films grown on Si (1 0 0) were studied via quantitative analyses of reflection electron energy loss spectra (REELS). - Abstract: Electronic and optical properties of Fe–Ni alloy thin films grown on Si (1 0 0) by ion beam sputter deposition were studied via quantitative analyses of reflection electron energy loss spectra (REELS). The analysis was carried out by using the QUASES-XS-REELS and QUEELS-ε(k,ω)-REELS softwares to determine the energy loss function (ELF) and the dielectric functions and optical properties by analyzing the experimental spectra. For Ni, the ELF shows peaks around 3.6, 7.5, 11.7, 20.5, 27.5, 67 and 78 eV. The peak positions of the ELF for Fe{sub 28}Ni{sub 72} are similar to those of Fe{sub 51}Ni{sub 49}, even though there is a small peak shift from 18.5 eV for Fe{sub 51}Ni{sub 49} to 18.7 eV for Fe{sub 28}Ni{sub 72}. A plot of n, k, ε{sub 1}, and ε{sub 2} shows that the QUEELS-ε(k,ω)-REELS software for analysis of REELS spectra is useful for the study of optical properties of transition metal alloys. For Fe–Ni alloy with high Ni concentration (Fe{sub 28}Ni{sub 72}), ε{sub 1}, and ε{sub 2} have strong similarities with those of Fe. This indicates that the presence of Fe in the Fe–Ni alloy thin films has a strong effect.

  5. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  6. Unusual dealloying effect in gold/copper alloy thin films: the role of defects and column boundaries in the formation of nanoporous gold.

    Science.gov (United States)

    El Mel, Abdel-Aziz; Boukli-Hacene, Farah; Molina-Luna, Leopoldo; Bouts, Nicolas; Chauvin, Adrien; Thiry, Damien; Gautron, Eric; Gautier, Nicolas; Tessier, Pierre-Yves

    2015-02-04

    Understanding the dealloying mechanisms of gold-based alloy thin films resulting in the formation of nanoporous gold with a sponge-like structure is essential for the future design and integration of this novel class of material in practical devices. Here we report on the synthesis of nanoporous gold thin films using a free-corrosion approach in nitric acid applied to cosputtered Au-Cu thin films. A relationship is established between the as-grown Au-Cu film characteristics (i.e., composition, morphology, and structure) and the porosity of the sponge-like gold thin films. We further demonstrate that the dealloying approach can be applied to nonhomogenous Au-Cu alloy thin films consisting of periodic and alternate Au-rich/Au-poor nanolayers. In such a case, however, the dealloying process is found to be altered and unusual etching stages arise. Thanks to defects and column boundaries playing the role of channels, the nitric acid is found to quickly penetrate within the films and then laterally (i.e., parallel to the film surface) attacks the nanolayers rather than perpendicularly. As a consequence to this anisotropic etching, the Au-poor layers are etched preferentially and transform into Au pillars holding the Au-rich layers and preventing them against collapsing. A further exposure to nitric acid results in the collapsing of the Au-rich layers accompanied by a transition from a multilayered to a sponge-like structure. A scenario, supported by experimental observations, is further proposed to provide a detailed explanation of the fundamental mechanisms occurring during the dealloying process of films with a multilayered structure.

  7. Biocorrosion investigation of two shape memory nickel based alloys: Ni-Mn-Ga and thin film NiTi.

    Science.gov (United States)

    Stepan, L L; Levi, D S; Gans, E; Mohanchandra, K P; Ujihara, M; Carman, G P

    2007-09-01

    Thin film nitinol and single crystal Ni-Mn-Ga represent two new shape memory materials with potential to be used as percutaneously placed implant devices. However, the biocompatibility of these materials has not been adequately assessed. Immersion tests were conducted on both thin film nitinol and single crystal Ni-Mn-Ga in Hank's balanced salt solution at 37 degrees C and pH 7.4. After 12 h, large pits were found on the Ni-Mn-Ga samples while thin film nitinol displayed no signs of corrosion. Further electrochemical tests on thin film nitinol samples revealed breakdown potentials superior to a mechanically polished nitinol disc. These results suggest that passivation or electropolishing of thin film nitinol maybe unnecessary to promote corrosion resistance.

  8. Microstructures and transformation characteristics of thin films of TiNiCu shape memory alloy

    Institute of Scientific and Technical Information of China (English)

    程秀兰; 徐东; 蔡炳初; 王莉; 陈鉴; 李刚; 徐实

    2002-01-01

    Both sputtering conditions and crystallizing temperatures have great influence on the microstructures and phase transformation characteristics for Ti51Ni44Cu5.By means of the resistance-temperature measurement,X-ray diffraction and atomic fore microscopic study,the results indicate that the transformation temperatures of the thin films increase and the "rock candy" martensitic relief is more easily obtained with promoting the sputtering Ar pressure,sputtering power,or crystallizing temperature.However,when sputtering Ar pressure,sputtering power,or crystallizing temperature are lower,a kind of "chrysanthemum" relief,which is related with Ti-rich GP zones,is much easier to be observed.The reason is that during crystallization process,both of the inherent compressive stresses introduced under the condition of higher sputtering pressure or higher crystallizing temperature are helpful to the transition from GP zones to Ti2(NiCu) precipitates and the increase of the transformation temperatures.The addition of copper to substitute for 5% nickel in mole fraction can reduce the transformation hysteresis width to about 10~15 ℃.

  9. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  10. Elastic properties of fcc Fe-Mn-X (X = Cr, Co, Ni, Cu) alloys studied by the combinatorial thin film approach and ab initio calculations.

    Science.gov (United States)

    Reeh, S; Kasprzak, M; Klusmann, C D; Stalf, F; Music, D; Ekholm, M; Abrikosov, I A; Schneider, J M

    2013-06-19

    The elastic properties of fcc Fe-Mn-X (X = Cr, Co, Ni, Cu) alloys with additions of up to 8 at.% X were studied by combinatorial thin film growth and characterization and by ab initio calculations using the disordered local moments (DLM) approach. The lattice parameter and Young's modulus values change only marginally with X. The calculations and experiments are in good agreement. We demonstrate that the elastic properties of transition metal alloyed Fe-Mn can be predicted by the DLM model.

  11. Effect of Cr addition on the structural, magnetic and mechanical properties of magnetron sputtered Ni-Mn-In ferromagnetic shape memory alloy thin films

    Science.gov (United States)

    Akkera, Harish Sharma; Kaur, Davinder

    2016-12-01

    The effect of Cr substitution for In on the structural, martensitic phase transformation and mechanical properties of Ni-Mn-In ferromagnetic shape memory alloy (FSMA) thin films was systematically investigated. X-ray diffraction results revealed that the Ni-Mn-In-Cr thin films possessed purely austenitic cubic L21 structure at lower content of Cr, whereas higher Cr content, the Ni-Mn-In-Cr thin films exhibited martensitic structure at room temperature. The temperature-dependent magnetization ( M- T) and resistance ( R- T) results confirmed that the monotonous increase in martensitic transformation temperatures ( T M) with the addition of Cr content. Further, the room temperature nanoindentation studies revealed the mechanical properties such as hardness ( H), elastic modulus ( E), plasticity index ( H/ E) and resistance to plastic deformation ( H 3/ E 2) of all the samples. The addition of Cr content significantly enhanced the hardness (28.2 ± 2.4 GPa) and resistance to plastic deformation H 3/ E 2 (0.261) of Ni50.4Mn34.96In13.56Cr1.08 film as compared with pure Ni-Mn-In film. As a result, the appropriate addition of Cr significantly improved the mechanical properties with a decrease in grain size, which could be further attributed to the grain boundary strengthening mechanism. These findings indicate that the Cr-doped Ni-Mn-In FSMA thin films are potential candidates for microelectromechanical systems applications.

  12. Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interfaces

    Science.gov (United States)

    Takamura, Yota; Suzuki, Takahiro; Fujino, Yorinobu; Nakagawa, Shigeki

    2014-05-01

    A 100-nm-thick L21-ordered full-Heusler Co2FeSi (CFS) alloy film was fabricated using the facing targets sputtering (FTS) method at a substrate temperature TS of 300 °C. The degrees of L21- and B2-order for the film were 37% and 96%, respectively. In addition, full-Heusler CFS alloy thin films with perpendicular magnetic anisotropy (PMA) induced by the magnetic anisotropy of MgO-interfaces were also successfully fabricated using the FTS method. The CFS/MgO stacked layers exhibited PMA when the CFS layer had a thickness of 0.6 nm ≤ dCFS ≤ 1.0 nm. The PMA in these structures resulted from the CFS/MgO interfacial perpendicular magnetic anisotropy.

  13. Cd-Zn-O-S alloys for optimal buffer layers in thin-film photovoltaics (Presentation Recording)

    Science.gov (United States)

    Varley, Joel B.; He, Xiaoqing; Mackie, Neil; Rockett, Angus A.; Lordi, Vincenzo

    2015-09-01

    Advances in thin-film photovoltaics have largely focused on modifying the absorber layer(s), while the choices for other layers in the solar cell stack have remained somewhat limited. In particular, cadmium sulfide (CdS) is widely used as the buffer layer in typical record devices utilizing absorbers like Cu(In,Ga)Se2 (CIGSe) or Cu2ZnSnS4 (CZTS) despite leading to a loss of solar photocurrent due to its band gap of 2.4 eV. While different buffers such as Zn(S,O,OH) are beginning to become competitive with CdS, the identification of additional wider-band gap alternatives with electrical properties comparable to or better than CdS is highly desirable. Here we use hybrid density functional calculations to characterize CdxZn1-xOyS1-y candidate buffer layers in the quaternary phase space composed by Cd, Zn, O, and S. We focus on the band gaps and band offsets of the alloys to assess strategies for improving absorption losses from conventional CdS buffers while maintaining similar conduction band offsets known to facilitate good device performance. We also consider additional criteria such as lattice matching to identify regions in the composition space that may provide improved epitaxy to CIGSe and CZTS absorbers. Lastly, we incorporate our calculated alloy properties into device model simulations of typical CIGSe devices to identify the CdxZn1-xOyS1-y buffer compositions that lead to the best performance. This work performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344 and funded by the Department of Energy office of Energy Efficiency and Renewable Energy (EERE) through the SunShot Bridging Research Interactions through collaborative Development Grants in Energy (BRIDGE) program.

  14. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  15. Evidence of a Surface-Mediated Magnetically Induced Miscibility Gap in Co-Pt Alloy Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Rooney, P.W.; Shapiro, A.L.; Tran, M.Q.; Hellman, F. [Department of Physics, University of California at San Diego, La Jolla, California 92093 (United States)

    1995-08-28

    (100) and (111) oriented single-crystal CoPt{sub 3} films were deposited over a range of growth temperatures from {minus}50 to 800 {degree}C. The Curie temperature is increased by 200 {degree}C over the value expected for the homogeneous alloy in the as-deposited films (of both orientations) grown near 400 {degree}C. We interpret this as evidence for a previously unobserved, surface-mediated, magnetically driven miscibility gap in vapor-deposited CoPt{sub 3} films. Large perpendicular magnetic anisotropy is also observed in the as-deposited films (of both orientations) grown near 400 {degree}C.

  16. Structural, optical and electrical properties of AlSb thin films deposited by pulsed laser deposition using aluminum-antimony alloying target

    Science.gov (United States)

    Yang, Ke; Li, Bing; Zhang, Jingquan; Li, Wei; Wu, Lili; Zeng, Guanggen; Wang, Wenwu; Liu, Cai; Feng, Lianghuan

    2017-02-01

    AlSb films which are a promising absorber layer for thin film solar cells were grown on glass substrate at different substrate temperature ranging from room temperature to 400 °C on glass substrates using aluminum-antimony alloying target by pulsed laser deposition (PLD) technique. Structural, optical and electrical properties of AlSb thin films were studied by X-ray diffraction (XRD), ultraviolet-visible spectrophotometer and a home-made four-probe-contact high temperature system respectively. XRD pattern shows that AlSb film is amorphous at room temperature, but when substrate temperature is higher than 100 °C, AlSb films present cubic phase structure with the preferential orientation of (111) plane. And intensity of diffraction peaks of AlSb film prepared at substrate temperature of 200 °C are stronger than that of other substrate temperature. The electrical measurement results show that conductivity activation energy of AlSb film is 0.25 eV and 0.28 eV. The indirect optical band gap is about 1.63 eV, which is very close to its theoretical value of 1.62 eV. The results of energy dispersive spectrometer (EDS) indicated the ratio of Al to Sb of AlSb films is about 1:1.

  17. Microfabricated Cantilevers Based on Sputtered Thin-Film Ni50Ti50 Shape Memory Alloy (SMA)

    Science.gov (United States)

    2015-08-01

    microelectromechanical system, shape memory alloy, SMA, thermal actuation 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT UU 18. NUMBER...2 Fig. 2 SEMs after the NiTi wet-etch patterning with HF .................................3 Fig. 3 SEMs after NiTi wet...etch patterning with HF and a 120-nm Au cap layer

  18. Crystal and electronic structure study of AgAu and AgCu bimetallic alloy thin films by X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Ozkendir, O. Murat, E-mail: ozkendir@gmail.com [Mersin University, Faculty of Technology, Energy Systems Engineering, Tarsus (Turkey); Mersin University, Institute of Natural Science, Department of Nanotechnology and Advanced Materials, Mersin (Turkey); Cengiz, E. [Karadeniz Technical University, Faculty of Science, Department of Physics, Trabzon (Turkey); Yalaz, E. [Mersin University, Institute of Natural Science, Department of Nanotechnology and Advanced Materials, Mersin (Turkey); Söğüt, Ö.; Ayas, D.H. [Kahramanmaraş Sütçü İmam Üniversitesi, Faculty of Science and Letters, Department of Physics, Kahramanmaraş (Turkey); Thammajak, B. Nirawat [Synchrotron Light Research Institute (Public Organisation), 111 University Avenue, T. Suranaree, A. Muang, Nakhon Ratchasima 30000 (Thailand)

    2016-05-15

    Highlights: • Crystal and electronic properties of bimetallic AgCu and AgAu alloy thin films were studied. • Both AgCu and AgAu bimetallic samples were determined to have cubic crystal geometry. • Strong influence of Cu and Au atoms on the electronic structure of the Ag atoms were determined. - Abstract: Crystal and electronic structure properties of bimetallic AgAu and AgCu alloy thin films were investigated by X-ray spectroscopic techniques. The aim of this study is to probe the influence of Au or Cu atoms on the electronic behaviors of Ag ions in bimetallic alloy materials that yields different crystal properties. To identify the mechanisms causing crystal phase transitions, study were supported by the collected EXAFS (Extended X-ray Absorption Fine Structure) data. Crystal structures of both Cu and Au doped bimetallic Ag samples were determined mainly in cubic geometry with “Fm3m” space group. Through the Ag–Au and Ag–Cu molecular interactions during bimetallic alloy formations, highly overlapped electronic levels that supports large molecular band formations were observed with different ionization states. Besides, traces of the d–d interactions in Au rich samples were determined as the main interplay in the broad molecular bond formations. The exact atomic locations and types in the samples were determined by EXAFS studies and supported by the performed calculations with FEFF scientific code.

  19. Electroless plating of low-resistivity Cu–Mn alloy thin films with self-forming capacity and enhanced thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Sung-Te, E-mail: stchen@mail.hust.edu.tw [Department of Electronic Engineering, Hsiuping University of Science and Technology, Dali 412, Taichung, Taiwan (China); Chen, Giin-Shan [Department of Materials Science and Engineering, Feng Chia University, Seatwen 407, Taichung, Taiwan (China)

    2015-11-05

    Previous studies have typically used sputter deposition to fabricate Cu–Mn alloy thin films with concentrated solute additions which have exceeded several atomic percentages, and the electrical resistivity values of the resultant films from previous studies are relatively high, ranging from 2.5 to 3.5 μΩ-cm. Herein, we proposed a different approach by using electroless process to plate dilute Cu–Mn (0.1 at.%) alloy thin films on dielectric layers (SiO{sub 2}). Upon forming-gas annealing, the Mn incorporated into Cu–Mn films was segregated toward the SiO{sub 2} side, eventually converting itself into a few atomic layer thickness at the Cu/SiO{sub 2} interface, and forming films with a low level of resistivity the same as that of pure Cu films (2.0 μΩ-cm). The interfacial layer served as not only a diffusion barrier, but also an adhesion promoter that prevented the film’s agglomeration during annealing at elevated temperatures. The mechanism for the dual-function performance by the Mn addition was elucidated by interfacial bonding analysis, as well as dynamic (adhesive strength) and thermodynamic (surface-tension) measurements. - Highlights: • Electroless plating is proposed to grow dilute (0.1%) Cu–Mn films on SiO{sub 2} layers. • Adequate annealing results in a self-forming of MnO{sub x} at the Cu/SiO{sub 2} interface. • The role of interfacial MnO{sub x} as a barrier and adhesion promoter is demonstrated. • The treated dilute film has a low ρ level of pure Cu, in contrast to concentrated films. • Its potential as a single entity replacement of Cu interconnect is presented.

  20. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  1. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  2. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  3. Laser deposition rates of thin films of selected metals and alloys

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

    . The experiments have been carried out at a laser wavelength of 355 nm in vacuum with a PLD chamber at DTU Fotonik, Risø Campus. The deposition rates have been measured by a quartz crystal microbalance. At a laser fluence of 2 J/cm2 the total ablated yield of copper is about 1x1015 atoms per pulse. The film...

  4. Spin injection from epitaxial Heusler alloy thin films into InGaAs/GaAs quantum wells

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad

    2006-01-01

    to typically 0.02-0.1 Ωmm2 for Fe and Co contacts but two orders of magnitude higher for the Co2MnGa contacts. Point contact Andreev reflection measurements on an off-stoichiometric thin film (Co2.4Mn1.6Ga) show a spin polarization of P ≈ 50 %. Furthermore spin injection into a InGaAs/GaAs quantum well have...... no anisotropy is seen for near stoichiometry thin films on an ordinary GaAs surface. Typically thin films grown on GaAs show lower saturation magnetization than expected from bulk properties. The electrical characterizations have revealed resistivities around ρ = 350μΩcm at 300 K. Generally, the near...

  5. Oscillatory Phase Behaviour as a Function of Film Thickness due to Confinement in fcc (100) AsB Alloy Thin Films

    Institute of Scientific and Technical Information of China (English)

    倪军; 刘华; 顾秉林

    2001-01-01

    The order-disorder phase transitions in fcc thin films are investigated by using the mean field method. The result shows that there is a significant difference in the phase transitions and surface segregation between the films of even-number and odd-number layers. There are various types of phase transitions involving several ordered phases with spatial variation for the film of even-number layers, while there is only one phase transition for the film of odd-number layers.

  6. Band gap engineering of N-alloyed Ga2O3 thin films

    Directory of Open Access Journals (Sweden)

    Dongyu Song

    2016-06-01

    Full Text Available The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH3 and Ar gas for 60 minutes. Then they were annealed in NH3 ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.

  7. Structural ordering of laser-processed FePdCu thin alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Perzanowski, Marcin, E-mail: Marcin.Perzanowski@ifj.edu.pl; Krupinski, Michal; Zarzycki, Arkadiusz; Zabila, Yevhen; Marszalek, Marta

    2015-10-15

    The Cu/Fe/Pd multilayers were transformed into L1{sub 0}-ordered FePdCu alloy by pulsed laser annealing. The initial multilayers were irradiated with 1, 10, 100, and 1000 laser pulses with duration time of 10 ns and energy density of 235 mJ/cm{sup 2}. The gradual change of the number of laser pulses allowed to investigate the structural and magnetic properties at early stages of the transformation and L1{sub 0}-ordering processes. The measurements were carried out using X-Ray Diffraction, SQUID magnetometry, and Magnetic Force Microscopy. We found that L1{sub 0} FePdCu (111)-oriented nanograins are formed by ordering of the coherent domains present in the as-deposited multilayer. The irradiation does not change the vertical size of the (111) crystallites. The L1{sub 0} (002)-oriented grains appear at the later stages of the transformation and their size increases with the number of applied laser pulses. Additionally, the laser annealing induces the magnetic ordering of the irradiated material, which was observed as an increase of the saturation magnetisation and the Curie temperature with the rising number of pulses. We also observed, that irradiation with 1000 pulses leads to the loss of order, which is reflected in the drop of the Curie temperature. - Highlights: • L1{sub 0}-ordered FePdCu alloy successfully fabricated by laser annealing. • The mechanism of (111) and (002) nanocrystallite formation was different. • Gradual change of annealing conditions showed early stages of transformation. • Saturation magnetisation and Curie temperature increased with the number of pulses.

  8. Temperature dependence of structural and optical properties of GeSbTe alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chabli, A. E-mail: achabli@cea.fr; Vergnaud, C.; Bertin, F.; Gehanno, V.; Valon, B.; Hyot, B.; Bechevet, B.; Burdin, M.; Muyard, D

    2002-09-01

    Ge{sub 2}Sb{sub 2}Te{sub 5} films sandwiched by ZnS-SiO{sub 2} layers were studied by spectroscopic ellipsometry from room temperature up to 800 deg. C. An irreversible modification of both materials is pointed out. ZnS cubic phase precipitation occurs after heating at 650 deg. C, shown by grazing incidence X-ray diffraction. Chemical modification in phase change material is observed above 300 deg. C, revealed by a typical behavior of a transparent layer.

  9. Electrical and optical properties of thin films with a SnS{sub 2} - Bi{sub 2}S{sub 3} alloy grown by sulphurization

    Energy Technology Data Exchange (ETDEWEB)

    Dussan, A; Mesa, F; Gordillo, G [Departamento de Fisica, Universidad Nacional de Colombia, Bogota Cr.30 No 45-03 (Colombia); Botero, M, E-mail: ggordillog@unal.edu.c, E-mail: adussanc@unal.edu.c [Departamento de Fisica, Universidad Central, Bogota Cr.5 No 21A-03 (Colombia)

    2009-05-01

    In this work, thin films of SnS{sub 2} with increased Bi content were grown by sulphurization of a thin film of Sn:Bi alloy, at temperatures around 300{sup 0}C. The effect of the Bi concentration on the optical, electrical and structural properties was determined through measurements of spectral transmittance, conductivity and x-ray diffraction XRD respectively. It was found that the optical constants (refractive index n, absorption coefficient alpha and energy gap Eg) and the electrical conductivity are significantly affected by the Bi concentration. In particular, a variation of the energy gap between 1.44 and 1.63 eV and a change of the conductivity greater than three orders of magnitude were observed when the content of Bi in the Sn:Bi alloy varied between 0 and 100 %. The analysis of the XRD measurements allowed us to find that the SnS: Bi films grow with a mixture of the SnS{sub 2} and Bi{sub 2}S{sub 3} phases, independently of the Bi content.

  10. Reliability design and assessment of a micro-probe using the results of a tensile test of a beryllium-copper alloy thin film

    Science.gov (United States)

    Park, Jun-Hyub; Shin, Myung-Soo

    2011-09-01

    This paper describes the results of tensile tests for a beryllium-copper (BeCu) alloy thin film and the application of the results to the design of a probe. The copper alloy films were fabricated by electroplating. To obtain the tensile characteristics of the film, the dog-bone type specimen was fabricated by the etching method. The tensile tests were performed with the specimen using a test machine developed by the authors. The BeCu alloy has an elastic modulus of 119 GPa and the 0.2% offset yield and ultimate tensile strengths of 1078 MPa and 1108 MPa, respectively. The design and manufacture of a smaller probe require higher pad density and smaller pad-pitch chips. It should be effective in high-frequency testing. For the design of a new micro-probe, we investigated several design parameters that may cause problems, such as the contact force and life, using the tensile properties and the design of experiment method in conjunction with finite element analysis. The optimal dimensions of the probe were found using the response surface method. The probe with optimal dimensions was manufactured by a precision press process. It was verified that the manufactured probe satisfied the life, the contact force and the over drive through the compression tests and the life tests of the probes.

  11. Ultrahigh coercivity and core-shell microstructure achieved in oriented Nd-Fe-B thin films diffusion-processed with Dy-based alloys

    Science.gov (United States)

    Zhang, Tongbo; Zhou, Xiaoqian; Yu, Dedong; Fu, Yanqing; Li, Guojian; Cui, Weibin; Wang, Qiang

    2017-01-01

    Ultrahigh ambient coercivities of 4 T were achieved in Nd-Fe-B benchmark thin film with coercivity of 1.06 T by diffusion-processing with Dy, Dy70Cu30 and Dy80Ag20 alloy layer. High texture and good squareness were obtained. In triple-junction regions, Dy element was found to be immiscible with Nd element. Microstructure observation indicated the typical gradient elementary distribution. Unambiguous core/shell microstructure was characterized by transition electron microscopy. Due to the enhanced ambient coercivity, the coercivity temperature stability was also substantially increased.

  12. First principles investigation of the activity of thin film Pt, Pd and Au surface alloys for oxygen reduction

    DEFF Research Database (Denmark)

    Tripkovic, Vladimir; Hansen, Heine Anton; Rossmeisl, Jan;

    2015-01-01

    Further advances in fuel cell technologies are hampered by kinetic limitations associated with the sluggish cathodic oxygen reduction reaction. We have investigated a range of different formulations of binary and ternary Pt, Pd and Au thin films as electrocatalysts for oxygen reduction. The most...

  13. EFFECT OF HEAT TREATMENTS ON THE MICROSTRUCTURE AND TRANSFORMATION CHARACTERISTICS OF TiNiPd SHAPE MEMORY ALLOY THIN FILMS

    Institute of Scientific and Technical Information of China (English)

    C.C. Zhang; C.S. Yang; G.F. Ding; S.Q. Qian; J.S. Wu

    2005-01-01

    Microstructure and phase transformation behaviors of the film annealed at different temperatures were studied by X-ray diffractometry (XRD), transmission electron microscopy and differential scanning calorimeter (DSC). Also tensile tests were examined. For increasing annealed temperature, multiple phase transformations, transformations via a B19-phase or direct martensite/austenite transformtion are observed. The TiNiPd thin film annealed at 750℃ had relatively uniform martensite/austenite transformtion and shape memory effect. Martensite/austenite transformtion was also found in strain-temperature curves. Subsequent annealing at 450℃ had minor effect on transformation temperatures of Ti-Ni-Pd thin films but resulted in more uniform transformation and improved shape memory effect.

  14. Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: drsudhirsharma@gmail.com; Mohan, S.

    2014-04-01

    Graphical abstract: FTIR spectra recorded for sputter deposited (a) untreated and (b) chemically treated NiTi SMA thin-films. - Highlights: • The effect of chemical treatment on surface properties of NiTi films demonstrated. • Chemically treated films offer strong ability to form protective TiO{sub 2} layer. • TiO{sub 2} layer formation offer great application prospects in biomedical fields. - Abstract: NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti:45/55 at.%). The rate of deposition and thickness of sputter deposited films were maintained to ∼35 nm min{sup −1} and 4 μm respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO{sub 3} respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (1 1 0) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (1 0 0), (1 0 1), and (2 0 0) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO{sub 2}) along with parent Austenite (1 1 0) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO{sub 2

  15. Enhanced coercivity thermal stability realized in Nd-Fe-B thin films diffusion-processed by Nd-Co alloys

    Science.gov (United States)

    Zhong, Hui; Fu, Yanqing; Li, Guojian; Liu, Tie; Cui, Weibin; Liu, Wei; Zhang, Zhidong; Wang, Qiang

    2017-03-01

    A proposed Nd2Fe14B-core/Nd2(Fe, Co)14B-shell microstructure was realized by diffusion-processing textured Nd14Fe77B9 single-layer film with Nd100-xCox (x=10, 20 and 40) alloys to improve the coercivity thermal stability. The ambient coercivity was increased from around 1 T in single-layer film to nearly 2 T in diffusion-processed films, which was due to the Nd-rich grain boundaries as seen from transmission electron microscopy (TEM) images. The coercivity thermal stability was improved by the core/shell microstructure because Nd-rich grain boundaries provided the high ambient coercivity and Co-rich shell provided the improved coercivity stability.

  16. Magnetoelectric and transport properties of (GaMn)Sb thin films: A ferrimagnetic phase in dilute alloys

    Science.gov (United States)

    Calderón, Jorge A.; Mesa, F.; Dussan, A.

    2017-02-01

    We studied the electrical, magnetic, and transport properties of (GaMn)Sb thin films fabricated by the direct current magnetron co-sputtering method. Using X-ray powder diffraction measurements, we identified the presence of ferrimagnetic (Mn2Sb) and ferromagnetic (Mn2Sb2) phases within the films. We also measured the magnetization of the films versus an applied magnetic field as well as their hysteresis curves at room temperature. We determined the electrical and transport properties of the films through temperature-dependent resistivity measurements using the Van Der Pauw method. The main contribution to the transport process was variable range hopping. Hopping parameters were calculated using percolation theory and refined using the diffusional model. In addition, we determined that all samples had p type semiconductor behavior, that there was an increase in the density of localized states near the Fermi level, and that the binary magnetic phases influenced the electrical properties and transport mechanisms.

  17. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  18. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  19. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  20. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  1. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  2. In-situ XRD study of alloyed Cu{sub 2}ZnSnSe{sub 4}-CuInSe{sub 2} thin films for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hartnauer, Stefan; Wägele, Leonard A.; Jarzembowski, Enrico; Scheer, Roland, E-mail: roland.scheer@physik.uni-halle.de

    2015-05-01

    We investigate the growth of Cu{sub 2}ZnSnSe{sub 4}-CuInSe{sub 2} (CZTISe) thin films using a 2-stage (Cu-rich/Cu-free) co-evaporation process under simultaneous application of in-situ angle dispersive X-ray diffraction (XRD). In-situ XRD allows monitoring the phase formation during preparation. A variation of the content of indium in CZTISe leads to a change in the lattice constant. Single phase CZTISe is formed in a wide range, while at high In contents a phase separation is detected. Because of different thermal expansion coefficients, the X-ray diffraction peaks of ZnSe and CZTISe can be distinguished at elevated substrate temperatures. The formation of ZnSe appears to be inhibited even for low indium content. In-situ XRD shows no detectable sign for the formation of ZnSe. First solar cells of CZTISe have been prepared and show comparable performance to CZTSe. - Highlights: • In-situ XRD study of two-stage co-evaporated Cu{sub 2}ZnSnSe{sub 4}-CuInSe{sub 2} alloyed thin films. • No detection of ZnSe with in-situ XRD due to Indium incorporation • Comparable efficiency of alloyed solar cells.

  3. Spatial resolution and switching field of magnetic force microscope tip coated with FePd-alloy thin film

    Directory of Open Access Journals (Sweden)

    Futamoto Masaaki

    2013-01-01

    Full Text Available Magnetic force microscope (MFM tips are prepared by coating Si tips of 4 nm radius with L10 ordered FePd-alloy films varying the thickness in a range between 10 and 80 nm. The effects of coating thickness on spatial resolution and switching field of MFM tip are investigated. As the thickness increases from 10 to 20 nm, the MFM signal detection sensitivity is improved and the resolution improves from 12.7 to 7.9 nm. With further increasing the thickness, the resolution decreases due to increase of tip radius. Magnetic bits of 15.9 nm length of a perpendicular medium recorded at 1600 kilo-flux-change-per-inch are distinguishable in the MFM image observed by using a tip coated with 20-nm-thick FePd film. The switching field monotonically increases from 0.70 to 1.50 kOe with increasing the coating thickness from 10 to 80 nm. The present study has shown that it is possible to prepare an MFM tip with spatial resolution better than 10 nm and switching field higher than 1 kOe by coating a sharp Si tip with an L10 ordered FePd-alloy film.

  4. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  5. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  6. Large anisotropic Fe orbital moments in perpendicularly magnetized Co2FeAl Heusler alloy thin films revealed by angular-dependent x-ray magnetic circular dichroism

    Science.gov (United States)

    Okabayashi, Jun; Sukegawa, Hiroaki; Wen, Zhenchao; Inomata, Koichiro; Mitani, Seiji

    2013-09-01

    Perpendicular magnetic anisotropy (PMA) in Heusler alloy Co2FeAl thin films sharing an interface with a MgO layer is investigated by angular-dependent x-ray magnetic circular dichroism. Orbital and spin magnetic moments are deduced separately for Fe and Co 3d electrons. In addition, the PMA energies are estimated using the orbital magnetic moments parallel and perpendicular to the film surfaces. We found that PMA in Co2FeAl is determined mainly by the contribution of Fe atoms with large orbital magnetic moments, which are enhanced at the interface between Co2FeAl and MgO. Furthermore, element specific magnetization curves of Fe and Co are found to be similar, suggesting the existence of ferromagnetic coupling between Fe and Co PMA directions.

  7. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  8. Raman analyses of residual stress in diamond thin films grown on Ti6Al4V alloy

    Directory of Open Access Journals (Sweden)

    Adriana F. Azevedo

    2003-01-01

    Full Text Available The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of -100V applied bias, the ratio of carbon sp³/sp² bond may increase and the nucleation rate increase arising the high value at the -250V applied bias. Stress measurements and sp³ content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from -1.52 to -1.48 GPa between 0 and -200 V applied bias, respectively, and above the -200 V, the compressive residual stress increased drastically to -1.80 GPa. The diamond nucleation density was evaluated by top view SEM images.

  9. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  10. Unexpected observation of spatially separated Kondo scattering and ferromagnetism in Ta alloyed anatase TiO2 thin films.

    Science.gov (United States)

    Sarkar, T P; Gopinadhan, K; Motapothula, M; Saha, S; Huang, Z; Dhar, S; Patra, A; Lu, W M; Telesio, F; Pallecchi, I; Ariando; Marré, D; Venkatesan, T

    2015-08-12

    We report the observation of spatially separated Kondo scattering and ferromagnetism in anatase Ta0.06Ti0.94O2 thin films as a function of thickness (10-200 nm). The Kondo behavior observed in thicker films is suppressed on decreasing thickness and vanishes below ~25 nm. In 200 nm film, transport data could be fitted to a renormalization group theory for Kondo scattering though the carrier density in this system is lower by two orders of magnitude, the magnetic entity concentration is larger by a similar magnitude and there is strong electronic correlation compared to a conventional system such as Cu with magnetic impurities. However, ferromagnetism is observed at all thicknesses with magnetic moment per unit thickness decreasing beyond 10 nm film thickness. The simultaneous presence of Kondo and ferromagnetism is explained by the spatial variation of defects from the interface to surface which results in a dominantly ferromagnetic region closer to substrate-film interface while the Kondo scattering is dominant near the surface and decreasing towards the interface. This material system enables us to study the effect of neighboring presence of two competing magnetic phenomena and the possibility for tuning them.

  11. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  12. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  13. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  14. Application of indium tin oxide (ITO) thin film as a low emissivity film on Ni-based alloy at high temperature

    Science.gov (United States)

    Sun, Kewei; Zhou, Wancheng; Tang, Xiufeng; Luo, Fa

    2016-09-01

    Indium tin oxide (ITO) films as the low emissivity coatings of Ni-based alloy at high temperature were studies. ITO films were deposited on the polished surface of alloy K424 by direct current magnetron sputtering. These ITO-coated samples were heat-treated in air at 600-900 °C for 150 h to explore the effect of high temperature environment on the emissivity. The samples were analyzed by X-ray diffraction (XRD), SEM and EDS. The results show that the surface of sample is integrity after heat processing at 700 °C and below it. A small amount of fine crack is observed on the surface of sample heated at 800 °C and Ti oxide appears. There are lots of fine cracks on the sample annealed at 900 °C and a large number of various oxides are detected. The average infrared emissivities at 3-5 μm and 8-14 μm wavebands were tested by an infrared emissivity measurement instrument. The results show the emissivity of the sample after annealed at 600 and 700 °C is still kept at a low value as the sample before annealed. The ITO film can be used as a low emissivity coating of super alloy K424 up to 700 °C.

  15. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  16. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  17. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  18. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  19. Electronic structure of metastable bcc Cu-Cr alloy thin films: Comparison of electron energy-loss spectroscopy and first-principles calculations.

    Science.gov (United States)

    Liebscher, C H; Freysoldt, C; Dennenwaldt, T; Harzer, T P; Dehm, G

    2016-07-12

    Metastable Cu-Cr alloy thin films with nominal thickness of 300nm and composition of Cu67Cr33 (at%) are obtained by co-evaporation using molecular beam epitaxy. The microstructure, chemical phase separation and electronic structure are investigated by transmission electron microscopy (TEM). The thin film adopts the body-centered cubic crystal structure and consists of columnar grains with ~50nm diameter. Aberration-corrected scanning TEM in combination with energy dispersive X-ray spectroscopy confirms compositional fluctuations within the grains. Cu- and Cr-rich domains with composition of Cu85Cr15 (at%) and Cu42Cr58 (at%) and domain size of 1-5nm are observed. The alignment of the interface between the Cu- and Cr-rich domains shows a preference for {110}-type habit plane. The electronic structure of the Cu-Cr thin films is investigated by electron energy loss spectroscopy (EELS) and is contrasted to an fcc-Cu reference sample. The experimental EEL spectra are compared to spectra computed by density functional theory. The main differences between bcc-and fcc-Cu are related to differences in van Hove singularities in the electron density of states. In Cu-Cr solid solutions with bcc crystal structure a single peak after the L3-edge, corresponding to a van Hove singularity at the N-point of the first Brillouin zone is observed. Spectra computed for pure bcc-Cu and random Cu-Cr solid solutions with 10at% Cr confirm the experimental observations. The calculated spectrum for a perfect Cu50Cr50 (at%) random structure shows a shift in the van Hove singularity towards higher energy by developing a Cu-Cr d-band that lies between the delocalized d-bands of Cu and Cr.

  20. Structure, magnetic properties and electrical resistivity of Co2FeSi1-xGax Heusler alloy thin films

    Science.gov (United States)

    Ramudu, M.; Raja, M. Manivel; Chelvane, J. Arout; Kamat, S. V.

    2016-11-01

    The influence of Ga on the structural, magnetic and half-metallic properties of Co2FeSi1-xGax (0≤x≤1) thin films grown on Si (100) substrates using ultra high vacuum magnetron sputtering has been systematically investigated. The linear increase in cubic lattice parameter from 5.63 Å to 5.73 Å and the Curie temperature (TC) from 854 K to 941 K with x varying from 0 to 1 indicate the progressive substitution of Ga for Si. The coercivity (Hc) was found to decrease from 26 Oe (x=0) to 3 Oe (x=1) at room temperature and is attributed to the decrease in magnetic anisotropy. The magnetic hysteresis loops measured from 300-873 K revealed that the film where Ga completely replaces Si exhibit better stability in both saturation magnetization (Ms) and Hc with temperature. The increase in coercivity at higher temperatures is attributed to the film to substrate interaction. The measured Ms at 100 K decreases from 5.01 μB/f.u. (x=0) to 4.49 μB/f.u. (x=1) and follows the trend of Slater-Pauling rule. The indirect evidence of half-metallic nature is examined from the temperature dependent electrical resistivity measurements.

  1. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  2. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad

    2008-11-01

    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  3. Advance in alloy thin-film pressure sensor for high-temperature environment%合金薄膜高温压力传感器研究进展

    Institute of Scientific and Technical Information of China (English)

    李伟; 陈怀礼

    2011-01-01

    The alloy thin-film pressure sensor has overcome the shortcomings of stickup pressure sensor,has more excellent performances and is suitble for harsh environments.The working principle of the alloy thin-film pressure senso is introduced in this paper.The advantages and disadvantages of several pressure sensors are compared.Taking the sensor's working temperature as an assessment index,the characteristics and development status of nickel-chromium(NiCr),platinum-tungsten (PtW) and palladium-chromium(PdCr) thin-film pressure sensors are elaborated.The conclusions are: NiCr thin-film pressure sensor is suitable for pressure measurement in the range of-269℃~ +350℃;PtW and PdCr thin-film pressure sensors are applied to pressure measurement at high temperature.The key technology and the application of alloy thin-film pressure sensor are reviewed.%合金薄膜压力传感器克服了粘贴式应变压力传感器的缺点,性能更优良,适应恶劣环境压力测量要求。对合金薄膜压力传感器的工作原理进行了介绍,比较了几种压力传感器的优缺点,并以应用温度范围这一指标为中心论述了镍铬、铂钨及钯铬薄膜压力传感器的性能特点及研究现状。镍铬薄膜传感器适用于中、低温介质压力测量,而铂钨、钯铬薄膜传感器适用于更高温度环境下的压力测量。

  4. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  5. Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering.

    Science.gov (United States)

    Husain, Sajid; Akansel, Serkan; Kumar, Ankit; Svedlindh, Peter; Chaudhary, Sujeet

    2016-06-30

    The influence of growth temperature Ts (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 Å) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (~4°) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant α and effective magnetization 4πMeff are found to vary from 0.0053 ± 0.0002 to 0.0015 ± 0.0001 and 13.45 ± 00.03 kG to 14.03 ± 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 ± 0.09 to 5.22 ± 0.10 μB/f.u. consistent with the bulk L21-type ordering. A record low α-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at Ts ~ 573 K.

  6. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  7. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  8. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  9. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  10. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  11. Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells

    Science.gov (United States)

    Amin, Nowshad; Yamada, Akira; Konagai, Makoto

    2002-05-01

    N2-doped ZnTe was introduced onto 1-μm-thick CdTe absorbers in order to reduce the carrier recombination at the back contact of CdS/CdTe/C/Ag configuration solar cells. ZnTe films were grown by molecular beam epitaxy (MBE) on GaAs and Corning glass substrates to investigate the characteristics of the films. Epitaxial growth of ZnTe was realized on GaAs substrates and a hole concentration of 8 × 1018 cm-3 with a resistivity of 0.045 Ω \\cdotcm was achieved as a result of nitrogen doping. In contrast, polycrystalline ZnTe films were grown on Corning glass and CdTe thin films. Dark and photoconductivity of ZnTe films increased to 1.43 × 10-5 S/cm and 1.41 × 10-4 S/cm, respectively, while the Zn to Te ratio was decreased to 0.25 during MBE growth. These ZnTe films with different thicknesses were inserted into close-spaced sublimation (CSS)-grown 1-μm-thick CdTe solar cells. A conversion efficiency of 8.31% (Voc: 0.74 V, Jsc: 22.98 mA/cm2, FF: 0.49, area: 0.5 cm2) was achieved for a 0.2-μm-thick ZnTe layer with a cell configuration of CdS/CdTe/ZnTe/Cu-doped-C/Ag. Furthermore, to overcome the problem of possible recombination loss in the interface layer of CdTe and ZnTe, the intermediate ternary CdZnTe is investigated. The compositional factor in Cd1-xZnxTe:N alloy is varied and the dependence of the conductivity is evaluated. For instance, Cd0.5Zn0.5Te:N, with dark and photoconductivity of 2.13 × 10-6 and 2.9 × 10-5 S/cm, respectively, is inserted at the back contact of a 1-μm-thick CdTe solar cell. A conversion efficiency of 7.46% (Voc: 0.68 V, Jsc: 22.60 mA/cm2, FF: 0.49, area: 0.086 cm2) was achieved as the primary result for a 0.2-μm-thick Cd0.5Zn0.5Te:N layer with the cell configuration of CdS/CdTe/Cd0.5Zn0.5Te:N/Au.

  12. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  13. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  14. The Structure and Stability of Molybdenum Ditelluride Thin Films

    Directory of Open Access Journals (Sweden)

    Zhouling Wang

    2014-01-01

    Full Text Available Molybdenum-tellurium alloy thin films were fabricated by electron beam evaporation and the films were annealed in different conditions in N2 ambient. The hexagonal molybdenum ditelluride thin films with well crystallization annealed at 470°C or higher were obtained by solid state reactions. Thermal stability measurements indicate the formation of MoTe2 took place at about 350°C, and a subtle weight-loss was in the range between 30°C and 500°C. The evolution of the chemistry for Mo-Te thin films was performed to investigate the growth of the MoTe2 thin films free of any secondary phase. And the effect of other postdeposition treatments on the film characteristics was also investigated.

  15. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  16. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  17. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  18. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  19. Thin-film amorphous silicon alloy research partnership, Phase I. Annual technical progress report, February 2, 1995--February 1, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S. [United Solar Systems Corp., Troy, MI (United States)

    1996-04-01

    The principal objective of this R&D program is to expand, enhance and accelerate knowledge and capabilities for the development of high-performance, two-terminal multifunction amorphous silicon (a-Si) alloy modules. The near-term goal of the program is to achieve 12% stable module efficiency by 1998 using the multifunction approach. This report describes research on back reflectors of Ag/TiO{sub 2}/ZnO.

  20. Microstructural and mechanical characteristics of Ni–Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petley, Vijay [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India); Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan [Department of Instrumentation and Applied Physics, IISc, Bangalore 12 (India); Chandrasekhar, U. [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India)

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  1. Recent Developments in High-Temperature Shape Memory Thin Films

    Science.gov (United States)

    Motemani, Y.; Buenconsejo, P. J. S.; Ludwig, A.

    2015-11-01

    High-temperature shape memory alloy (HTSMA) thin films are candidates for development of microactuators with operating temperatures exceeding 100 °C. This article reviews recent advances and developments in the field of HTSMA thin films during the past decade, with focus on the systems Ti-Ni-X (X = Hf, Zr, Pd, Pt and Au), Ti-Ta, and Au-Cu-Al. These actuator films offer a wide range of transformation temperatures, thermal hysteresis, and recoverable strains suitable for high-temperature applications. Promising alloy compositions in the systems Ti-Ni-Hf, Ti-Ni-Pd, Ti-Ni-Au, and Au-Cu-Al are highlighted for further upscaling and development. The remaining challenges as well as prospects for development of HTSMA thin films are also discussed.

  2. In-situ observation of transition between surface relief and wrinkling in thin film shape memory alloys.

    Science.gov (United States)

    Fu, Y Q; Sanjabi, S; Barber, Z H; Huang, W M; Cai, M; Zhang, S; Luo, J K; Flewitt, A J; Milne, W I

    2008-05-01

    Significant surface morphology evolution between relief and wrinkling was observed on a 3.5 microm thick TiNiCu film sputter-deposited on a silicon substrate. At room temperature, variation in surface relief morphology (from separated martensite crystals embedded in amorphous matrix to fully interweaved martensite plates) was observed with slight change in film composition. The phenomenon was attributed to variations in crystallization temperatures of as-deposited amorphous films during annealing because of the compositional difference. During thermal cycling between room temperature and 100 degrees C, reversible surface morphology changes can be observed between surface relief and wrinkling patterns. The formation of the surface wrinkling is attributed to the large compressive stress in the film during high temperature post-annealing and crystallization, whereas surface relief is caused by the martensitic transformation to relieve the large tensile stress in the film. Compositional effect on this surface morphology evolution is discussed. Results also indicate that there is a critical dimension for the wrinkling to occur, and a small circular island can only relax by in-plane expansion.

  3. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  4. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  5. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  6. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. Electrodeposition and electrocatalytic activity of Pt and Pt-alloy nanoparticles and thin films on highly oriented pyrolytic graphite (HOPG)

    Science.gov (United States)

    Lu, Guojin

    Pt and Pt-based alloy catalysts were synthesized by electrodeposition on HOPG. The nucleation and growth, morphology, composition and crystal structure, and electrocatalytic activity (towards relevant reactions in the frame of PEMFCs and DMFCs) of these model electrodes were systematically investigated. The presence of chlorides inhibits the Pt reduction processes. There is a transition from progressive to instantaneous nucleation with increasing overpotential for the deposition from 1 mM H2PtCl6 electrolytes. The possibility of instantaneous nucleation at large overpotential by using electrolytes with large chloride concentration is advantageous for the growth of small, well dispersed nanoparticles. The electrochemical data were confirmed by AFM and SEM imaging studies. Relatively narrow size distributed nanoparticles can be obtained from the current system. While MOR activity decreases with decreasing particle size, the HER and HOR activity of deposited Pt particles increases with decreasing deposition period. The ORR activity first increases then decreases with increasing deposition time. Interactions between Pt and Ru, or Ni or Co are observed and they form solid solution as verified by XRD. Underpotential deposition occurs for Pt-Ni or Pt-Co co-electrodeposition. Pt-Ru deposition can be described as progressive nucleation at low overpotential and instantaneous nucleation at high overpotentials. Through direct morphological observations, the Pt-Ni or Pt-Co nucleation can be approximately described as progressive. Pt-Ru deposits are superior to Pt towards MOR. The optimum Ru content is about 50 at.%. Pt-Ni and Pt-Co deposits are more active than Pt for ORR. The optimum content is about 30 at.% Ni or 50 at.% Co. Dealloying of Pt-Ru and Pt-Ni or Pt-Co electrodeposit is observed after electrochemical characterization. The extent of dealloying increases with the content of the alloying element.

  8. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  9. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  10. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  11. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  12. Enhancement of the mechanical properties of AZ31 magnesium alloy via nanostructured hydroxyapatite thin films fabricated via radio-frequency magnetron sputtering.

    Science.gov (United States)

    Surmeneva, M A; Tyurin, A I; Mukhametkaliyev, T M; Pirozhkova, T S; Shuvarin, I A; Syrtanov, M S; Surmenev, R A

    2015-06-01

    The structure, composition and morphology of a radio-frequency (RF) magnetron sputter-deposited dense nano-hydroxyapatite (HA) coating that was deposited on the surface of an AZ31 magnesium alloy were characterized using AFM, SEM, EDX and XRD. The results obtained from SEM and XRD experiments revealed that the bias applied during the deposition of the HA coating resulted in a decrease in the grain and crystallite size of the film having a crucial role in enhancing the mechanical properties of the fabricated biocomposites. A maximum hardness of 9.04 GPa was found for the HA coating, which was prepared using a bias of -50 V. The hardness of the HA film deposited on the grounded substrate (GS) was found to be 4.9 GPa. The elastic strain to failure (H/E) and the plastic deformation resistance (H(3)/E(2)) for an indentation depth of 50 nm for the HA coating fabricated at a bias of -50 V was found to increase by ~30% and ~74%, respectively, compared with the coating deposited at the GS holder. The nanoindentation tests demonstrated that all of the HA coatings increased the surface hardness on both the microscale and the nanoscale. Therefore, the results revealed that the films deposited on the surface of the AZ31 magnesium alloy at a negative substrate bias can significantly enhance the wear resistance of this resorbable alloy.

  13. Electronic processes in thin-film PV materials. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P.C.; Chen, D.; Chen, S.L. [and others

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  14. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  15. Novel wide band gap alloyed semiconductors, x(LiGaO2)1/2-(1-x)ZnO, and fabrication of their thin films

    Institute of Scientific and Technical Information of China (English)

    T.; OMATA; K.; TANAKA; A.; TAZUKE; K.; NOSE; S.; OTSUKA-YAO-MATSUO

    2009-01-01

    Oxide semiconductor alloys of x(LiGaO2)1/2-(1-x)ZnO were fabricated by the solid state reaction between β-LiGaO2 and ZnO and rf-magnetron sputtering. For the solid state reaction, the wurtzite-type single phases were obtained in the composition range of x≤0.38. The formation range of the alloys was wider than that of the (Mg1-xZnx)O system, because the β-LiGaO2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The electrical resistivity and energy band gap of the 0.38(LiGaO2)1/2-0.62ZnO alloyed ceramic were 0.45 Ωcm and 3.7 eV, respectively, at room temperature. For the alloying by sputtering, the films consisting of the wurtzite-type single phase were obtained over the entire composition range of x(LiGaO2)1/2-(1-x)ZnO. The energy band gap was controllable in the range from 3.3 to 5.6 eV. For the as-deposited film fabricated using the 0.4(LiGaO2)1/2- 0.6ZnO alloyed ceramic target, the energy band gap was 3.74 eV, and the electrical resistivity, carrier density and the Hall mobility at room temperature were 3.6 Ωcm, 3.4×1017 cm?3 and 5.6 cm2 V-1 s-1, respectively.

  16. Nanocrystalline CdS{sub 1−x}Se{sub x} alloys as thin films prepared by chemical bath deposition: Effect of x on the structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: mhernandezp0606@ipn.mx [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Rangel-Salinas, E. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico)

    2014-12-05

    Highlights: • CdS1−xSe{sub x} films with tunable structural and optical properties were grown by CBD. • Thin films are composed by a solid solution of the CdS{sub 1−x}Se{sub x} ternary alloy. • Crystal size, band gap and photoluminescence signal, decrease with the composition. • Ternary alloys show hexagonal phase with preferential orientation on (0 0 2) plane. • Films with x ⩾ 0.5 show semi-spherical grains composed by nanoworms structures. - Abstract: CdS{sub 1−x}Se{sub x} thin films were deposited on Corning glass substrates at 75 °C by chemical bath deposition (CBD) varying the composition “x” from 0 to 1 at a constant deposition time of 120 min. The composition of the films was adjusted by modifying the concentration as well as the ratio of the precursors. The morphological, compositional, structural and optical properties of the films were analyzed using several techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), UV–Vis Spectroscopy (UV–Vis) and Photoluminescence (PL). The films grow as layers following the ion by ion mechanism, the density of the films decreases with x. Films are constituted by clusters (100–600 nm in diameter) of semispherical particles with sizes fluctuating from 10 to 20 nm. For x ⩾ 0.5 the particles are well-arranged in a “worm-like” structure. All the films are polycrystalline, to x = 0 (CdS) the cubic phase is present, the increase of composition promotes the formation of hexagonal phase or a mixture of both cubic and hexagonal phases. Preferential orientation in the (1 0 0) or (0 0 2) plane is observed. The crystal size decreases from 20 to 6 nm when x is increased. The optical properties can be easily tuned by adjusting the composition. Optical absorption analysis shows that the band gap (E{sub g}) value shifts to red in function of x (from 2.47 to 1.99 eV). Photoluminescence signal changes as “x” varies showing a regular behavior

  17. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  18. Low-temperature sequential pulsed chemical vapor deposition of ternary B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N thin film alloys

    Energy Technology Data Exchange (ETDEWEB)

    Haider, Ali, E-mail: ali.haider@bilkent.edu.tr, E-mail: biyikli@unam.bilkent.edu.tr; Kizir, Seda; Ozgit-Akgun, Cagla; Biyikli, Necmi, E-mail: ali.haider@bilkent.edu.tr, E-mail: biyikli@unam.bilkent.edu.tr [National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800, Turkey and Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara 06800 (Turkey); Okyay, Ali Kemal [National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, Ankara 06800 (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, Ankara 06800 Turkey (Turkey)

    2016-01-15

    In this work, the authors have performed sequential pulsed chemical vapor deposition of ternary B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N alloys at a growth temperature of 450 °C. Triethylboron, triethylgallium, trimethylindium, and N{sub 2} or N{sub 2}/H{sub 2} plasma have been utilized as boron, gallium, indium, and nitrogen precursors, respectively. The authors have studied the compositional dependence of structural, optical, and morphological properties of B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N ternary thin film alloys. Grazing incidence X-ray diffraction measurements showed that boron incorporation in wurtzite lattice of GaN and InN diminishes the crystallinity of B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N sample. Refractive index decreased from 2.24 to 1.65 as the B concentration of B{sub x}Ga{sub 1-x}N increased from 35% to 88%. Similarly, refractive index of B{sub x}In{sub 1-x}N changed from 1.98 to 1.74 for increase in B concentration value from 32% to 87%, respectively. Optical transmission band edge values of the B{sub x}Ga{sub 1-x}N and B{sub x}In{sub 1-x}N films shifted to lower wavelengths with increasing boron content, indicating the tunability of energy band gap with alloy composition. Atomic force microscopy measurements revealed an increase in surface roughness with boron concentration of B{sub x}Ga{sub 1-x}N, while an opposite trend was observed for B{sub x}In{sub 1-x}N thin films.

  19. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  20. Structural and optical properties of homogeneous Cu(In,Ga)Se2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys with elemental Se vapour

    Science.gov (United States)

    Dejene, F. B.; Alberts, V.

    2005-01-01

    In this study, thin films of Cu(In,Ga)Se2 were prepared by the controlled reaction of thermally evaporated InSe/Cu/GaSe precursors with elemental Se vapour in vacuum. We indicate that this classical two-step growth process can be utilized to produce homogeneous single-phase chalcopyrite absorber films with superior structural properties. X-ray diffraction studies indicated that the interplanar spacing d(112) decreases linearly with an increase in the Ga/[In + Ga] atomic ratio due to homogeneous incorporation of gallium into the chalcopyrite lattice. Optical studies revealed the expected systematic increase in the band gap with increasing gallium concentration, once again confirming the monophasic nature of the alloys.

  1. Structural and optical properties of homogeneous Cu(In,Ga)Se{sub 2} thin films prepared by thermal reaction of InSe/Cu/GaSe alloys with elemental Se vapour

    Energy Technology Data Exchange (ETDEWEB)

    Dejene, F B; Alberts, V [Department of Physics, Rand Afrikaans University, PO Box 524, Johannesburg (South Africa)

    2005-01-07

    In this study, thin films of Cu(In,Ga)Se{sub 2} were prepared by the controlled reaction of thermally evaporated InSe/Cu/GaSe precursors with elemental Se vapour in vacuum. We indicate that this classical two-step growth process can be utilized to produce homogeneous single-phase chalcopyrite absorber films with superior structural properties. X-ray diffraction studies indicated that the interplanar spacing d{sub (112)} decreases linearly with an increase in the Ga/[In + Ga] atomic ratio due to homogeneous incorporation of gallium into the chalcopyrite lattice. Optical studies revealed the expected systematic increase in the band gap with increasing gallium concentration, once again confirming the monophasic nature of the alloys.

  2. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  3. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  4. Sample Fabrication and Experimental Approach for Studying Interfacial Sliding in Thin Film-Substrate Systems

    Science.gov (United States)

    2006-09-01

    Technology 14.5 (1998): 405-410. 19. Zuruzi, A. S., H. Li, and G. Dong. "Diffusion Bonding of Aluminium Alloy 6061 in Air Using an Interface...428. 18. Huang, Y., F. J. Humphreys, N. Ridley, and Z. C. Wang. "Diffusion Bonding of Hot Rolled 7075 Aluminium Alloy." Materials Science and...and Takashi Ohnishi. "Effect of Aluminium Oxide Caps on Hillock Formation in Aluminium Alloy Films." Thin Solid Films 349 (1999): 191-198. 53

  5. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  6. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  7. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  8. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.

    1998-01-01

    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  9. Enhancement of order degree and perpendicular magnetic anisotropy of L10 ordered Fe(Pt,Pd) alloy film by introducing a thin MgO cap-layer

    Science.gov (United States)

    Noguchi, Youhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi; Inaba, Nobuyuki

    2016-07-01

    Fe50PtxPd50-x (at%, x=0-50) alloy films of 10 nm thickness with and without 2-nm-thick MgO cap-layers are prepared on MgO(001) single-crystal substrates by employing a two-step method consisting of low-temperature deposition at 200 °C followed by high-temperature annealing at 600 °C. The influences of MgO cap-layer on the structure and the magnetic properties are investigated. Fe50PtxPd50-x films epitaxially grow on the substrates at 200 °C. The Fe50Pd50 and the Fe50Pt12.5Pd37.5 films are respectively composed of (001) single-crystals with disordered fcc-based (A1) and bcc-based (A2) structures. The films with x>25 consist of mixtures of A1 and A2 crystals. The volume ratio of A2 to A1 crystal decreases with increasing the x value from 25 to 50. The in-plane and out-of-plane lattices are respectively expanded and shrunk due to accommodation of lattice mismatch between film and substrate. When the films are annealed at 600 °C, phase transformation to L10 ordered phase takes place. L10 phase transformation of Fe50PtxPd50-x film is promoted for a sample with MgO cap-layer and the order degree is higher than that without cap-layer. Furthermore, L10 ordering with the c-axis perpendicular to the substrate surface is enhanced for the film with cap-layer. The cap-layer is considered to be giving a tension stress to the magnetic film in lateral direction which promotes L10 ordering with the c-axis perpendicular to the substrate. Deposition of cap-layer is shown effective in achieving higher order degree and in enhancing perpendicular magnetic anisotropy with Fe(Pt,Pd) films.

  10. Effect of Cu concentration on the formation of Cu{sub 1−x} Zn{sub x} shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karahan, İsmail Hakkı [Department of Physics, Mustafa Kemal University, Hatay 31000 (Turkey); Özdemir, Rasim, E-mail: ihkarahan@gmail.com [Department of Physics, Mustafa Kemal University, Hatay 31000 (Turkey); Kilis Vocational High School, Kilis 7 Aralık University, 79000 Kilis (Turkey)

    2014-11-01

    Highlights: • 3 different composition of Cu–Zn deposits successfully deposited from the non-cyanide sulphate electrolyte. • The homogeneous metal films and Cu–Zn alloys were electrodeposited on Al substrate. • The effect of Cu content was strongly effected structural and the electrical resistivity of Cu–Zn alloys. • The average crystallite size of the samples varied from 66 to 100 nm and decreased when Cu content in the electrolyte. • Microstrain has been decreased with increasing crystallite size. • Cyclic voltammetry of the electrolyte explained the characters of the baths. - Abstract: The Cu{sub x}Zn1−x (x = 0.06, 0.08, 0.1) deposits were fabricated by a electrodeposition method. The structural and electrical properties of the films were investigated by cyclic voltammetry (CV), X-ray diffraction (XRD), Scanning electron micrograph (SEM), and DC resistivity measurements. Phase identification of the samples was studied by the XRD patterns. XRD patterns shows the characteristics XRD peaks corresponding to the, β, and γ phases. The grain sizes of the samples were decreased whereas microstrain increased with the increase in Cu{sup 2+} substitution. The SEM study reveals the fine particle nature of the samples with increasing Cu content. DC resistivity indicates the metallic nature of the prepared samples. It has been found that the Cu ions have a critical influence on the resultant structure and resistivity properties of the Cu–Zn samples.

  11. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  12. Obtaining shape memory alloy thin layer using PLD technique

    Directory of Open Access Journals (Sweden)

    Cimpoeşu N.

    2014-01-01

    Full Text Available Copper-based shape memory alloy (SMA was obtained through a classic melting method. The material was analyzed in heat treated and deformed states using scanning electrons microscopy (SEM, dilatometry (DIL, differential scanning calorimetry (DSC, dynamic mechanical analyzer (DMA and energy dispersive X-ray analyze (EDAX to establish the material microstructure, memory properties like martensitic transformation domain and rate or damping capacity. The material exhibits a good shape memory effect and high internal friction and it is proposed as target in a pulsed laser deposition (PLD process for obtaining thin films. The deposition process is described in this paper through presented experimental results on the layer.

  13. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  14. Perpendicular magnetic anisotropy of Au/FePt thin films grown on Si substrates

    CERN Document Server

    Lee, Y W; Kim, C O

    1999-01-01

    FePt thin films show in plane magnetism with a very large coercive force when they are deposited on lattice-mismatched substrates, such as glass or Si In our research, FePt alloy thin films were deposited, using the coevaporation method, on a Au buffer layer which was evaporated onto a Si substrate at 500 .deg. C. The magnetic easy axis of the FePt film changed from the in-plane direction to the normal direction of the film. Therefore, it can be said that a Au buffer layer can enhance the perpendicular magnetic anisotropy of a FePt thin film on a lattice-mismatched substrate.

  15. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  16. Field-emission transmission electron microscopy study of the reaction sequence between Sn–Ag–Cu alloy and an amorphous Pd(P) thin film in microelectronic packaging

    Energy Technology Data Exchange (ETDEWEB)

    Ho, C.E., E-mail: ceho1975@hotmail.com; Wang, C.C.; Rahman, M.A.; Lin, Y.C.

    2013-02-01

    The reaction sequence between liquid Sn–3Ag–0.5Cu solder and solid Au/Pd(P)/electrolytic-Ni films was carefully examined using a field-emission transmission electron microscope at different exposure times (15 s, 30 s, and 120 s). After 15 s of exposure, the uppermost layer of Au was removed from the interface and a portion of the Pd(P) film remained. At this stage of the reaction, the predominant products were PdSn{sub 3} and Pd{sub 3}P. After 30 s of exposure, Pd(P) was completely exhausted, and three additional intermetallic species, including Pd–Sn–P, Pd{sub 6}P, and Pd{sub 15}P{sub 2}, nucleated. After 120 s of exposure, the aforementioned species were destroyed, and Cu and Ni were involved in the reaction. The predominant product became (Cu,Ni){sub 6}Sn{sub 5}, and the nucleation of a nanocrystalline Ni{sub 2}SnP layer in the middle of (Cu,Ni){sub 6}Sn{sub 5} resulted. These results suggest that Pd and P play a vital role in the early stage of soldering reaction, even though the Pd(P) film is only a few submicrons thick and its P content is quite low (2–5%). - Highlights: ► Reaction sequence between an amorphous Pd(P) film and Sn–Ag–Cu alloy. ► Solder reaction assisted the crystallization of amorphous Pd(P) into Pd–P phase(s). ► Direct proof of the Pd(P)-induced Ni{sub 2}SnP nucleation. ► Pd and P both played a central role in the early stage of soldering reaction.

  17. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  18. Preparation and Photocatalytic Activity of TiO2 Thin Films on Al Alloys%铝合金表面制备二氧化钛薄膜及其光催化活性研究

    Institute of Scientific and Technical Information of China (English)

    蔡倩; 王金淑; 李洪义; 刘绍林; 李玉梅

    2012-01-01

    分别以阳极氧化处理的6061铝合金和纯铝为载体,用液相沉积的方法在载体上制备了二氧化钛薄膜.结果表明,在6061铝合金上的TiO2纳米薄膜呈现带有孔洞的竹节状结构,而纯铝基片上的TiO2纳米薄膜具有良好的一维贯通结构,这主要是在AAO模板制备过程中,由于铝合金中的合金元素Mg被氧化,其产生的氧化物体积比A12O3的体积小所致.在铝合金表面的TiO2薄膜光催化性能优于纯铝表面的TiO2薄膜.铝合金表面制备的TiO2薄膜因其特殊的带孔洞的竹节状结构,使其比表面积比纯铝上的TiO2薄膜大,因此其光降解甲基蓝效果更好.TiO2对甲基蓝的光催化降解符合一级反应动力学公式,在0.1 mol/L的氟钛酸铵溶液中沉积得到的TiO2薄膜光催化性能最好,表观反应速率为k=0.00444/min.%Using anodized 6061 aluminum alloy and pure aluminum as the templates, TiO2 thin films were prepared through a liquid deposition method. The TiO2 thin film fabricated on the 6061 aluminum alloy substrates appears as bamboo-like structures with holes, whereas that prepared on anodized pure aluminum substrate has one-dimensional tubular structures. The main reason is that magnesium in aluminum alloy is oxidized to form magnesium oxide which has a lower volume than that of A12O3. The photocatalytic ability of the TiO2 films prepared on the aluminum alloy is superior to that of the films fabricated on the pure aluminum. TiO2 prepared on aluminum alloy has higher specific surface area due to its bamboo-like structures with holes, leading to better performance in the degradation of methyl-ene blue. The photocatalytic performance of the TiO2by the degradation of aqueous methylene blue is in accordance with the first kinetic equation. TiO2 films deposited in 0.1 mol/L (NHJ TiF6 solution obtain the best photocatalytic performance at apparent reaction rate of 0.00444/min.

  19. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  20. Application of Stabilized Silver Nanoparticles as Thin Films as Corrosion Inhibitors for Carbon Steel Alloy in 1 M Hydrochloric Acid

    Directory of Open Access Journals (Sweden)

    Ayman M. Atta

    2013-01-01

    Full Text Available Nanometer scaled materials have attracted tremendous interest as corrosion protective films due to their high ability to form self-assembled films on the metal surfaces. It is well known that the silver nanoparticles have higher reactivity towards aqueous acidic solution. The present work aims to prepare coated silver nanoparticles to protect carbon steel alloys from aqueous acidic corrosive media. In this respect, Ag nanoparticles colloid solutions were produced through reducing AgNO3 separately with trisodium citrate in an aqueous solution or in the presence of stabilizer such as poly(ethylene glycol thiol and poly(vinyl pyrrolidone. The morphology of the modified silver nanoparticles was investigated by TEM and DLS. UV-Vis absorption spectrum was used to study the effect of HCl on the stability of the dispersed silver nanoparticles. The corrosion inhibition efficiency of the poly (ethylene glycolthiol, the self-assembled monolayers of Ag nanoparticles, was determined by polarization method and electrochemical impedance spectroscopy (EIS. Polarization curves indicated that the coated silver poly (ethylene glycolthiol acted as a mixed type inhibitor. The data of inhibition efficiencies obtained measured by polarization measurements are in good agreement with those obtained with electrochemical impedance.

  1. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  2. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  3. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  4. Magnetostrictive thin films for microwave spintronics.

    Science.gov (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  5. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  6. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  7. Structural modification and band gap engineering of sol–gel dip-coated thin films of Zn$_{0.75}$Mg$_{0.25}$O alloy under vacuum annealing

    Indian Academy of Sciences (India)

    NRIPASREE NARAYANAN; N K DEEPAK

    2016-12-01

    In the present study, we investigated the effect of vacuum annealing on the structural and optical properties of sol–gel dip-coated thin films of Zn$_{0.75}$Mg$_{0.25}$O alloy. XRD studies revealed that all these films werepolycrystalline with hexagonal wurtzite structure and there was no trace of additional phases other than ZnO.With increase in annealing temperature, the samples showed preferred orientation along the c-axis, (0 0 2) plane andalso peak narrowing and peak shift towards higher angles. The calculated values of mean crystallite size increased with annealing temperature indicating the improvement in crystallinity. Heat treatment caused lattice contractionand a decrease in film thickness. The optical transmittance in the visible spectral range enhanced with increase in annealing temperature while the fundamental absorption edge in the near ultra-violet region got red-shifted with annealing. The calculated values of optical energy gap of the samples showed a decrease with heat treatment due to the improvement in crystallinity during annealing and hence the subsequent decrease in quantum size effect.

  8. Growth of Cu2ZnSnSe4 thin films by selenization of sputtered single-layered Cu-Zn-Sn metallic precursors from a Cu-Zn-Sn alloy target

    Science.gov (United States)

    Kim, Kyoo-Ho; Amal, Ikhlasul

    2011-09-01

    Cu2ZnSnSe4 (CZTSe) thin films were prepared by the simple process of selenization of single-layered metallic Cu-Zn-Sn precursors. These metallic precursors were deposited by radio frequency magnetron sputtering of a ternary Cu-Zn-Sn alloy target. Successive selenization was performed at various temperatures between 250°C and 500°C for 30 min. X-ray diffraction and Raman analysis showed that a single phase of the CZTSe compound can be obtained by selenization at 400°C, while increasing the selenization temperature to 500°C improves the grain size and crystal quality. The direct optical band gap of CZTSe films was calculated to be 1.06 eV to 1.09 eV with a high absorption coefficient on the order of 104 cm-1 for samples selenized at 400°C to 500°C. The obtained films are p-type semiconductors with bulk carrier concentrations of 2.41 to 7.96 × 1018 cm3, mobilities of 1.30 cm2 V-1 s-1 to 9.27 cm2 V-1 s-1, and resistivities of 0.20 Ωcm to 1.95 Ωcm.

  9. Hydrogen gas sensor based on palladium and yttrium alloy ultrathin film

    Science.gov (United States)

    Yi, Liu; You-ping, Chen; Han, Song; Gang, Zhang

    2012-12-01

    Compared with the other hydrogen sensors, optical fiber hydrogen sensors based on thin films exhibits inherent safety, small volume, immunity to electromagnetic interference, and distributed remote sensing capability, but slower response characteristics. To improve response and recovery rate of the sensors, a novel reflection-type optical fiber hydrogen gas sensor with a 10 nm palladium and yttrium alloy thin film is fabricated. The alloy thin film shows a good hydrogen sensing property for hydrogen-containing atmosphere and a complete restorability for dry air at room temperature. The variation in response value of the sensor linearly increases with increased natural logarithm of hydrogen concentration (ln[H2]). The shortest response time and recovery response time to 4% hydrogen are 6 and 8 s, respectively. The hydrogen sensors based on Pd0.91Y0.09 alloy ultrathin film have potential applications in hydrogen detection and measurement.

  10. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  11. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  12. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  13. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  14. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  15. Elaboration and characterization of thin solid films containing cerium

    Science.gov (United States)

    Hamdi, S.; Guerfi, S.; Siab, R.

    2009-11-01

    Cerium oxide films are widely studied as a promising alternative to Cr(VI) based pre-treatments for the corrosion protection of different metals and alloys. Cathodic electrodeposition of Cerium containing thin films was realised on TA6V substrates from a Ce(NO3)3, 6H2O and mixed water-ethyl alcohol solutions at 0.01 M. Experimental conditions to obtain homogeneous and crack free thin films were determined. The deposited cerium quantity appears proportional to the quantity of electricity used, as indicated by the Faraday law. Subsequent thermal treatment lead to a CeO2 coating, expected to provide an increase of TA6V oxidation resistance at high temperatures. The deposits were characterized by differential scanning calorimetry (DSC), optical and scanning electron microscopies.

  16. Composition, Constitution and Phase Transformation Behavior in Thin-Film and Bulk Ti-Ni-Y

    Science.gov (United States)

    König, D.; Frowein, P.; Wieczorek, A.; Frenzel, J.; Hamann, S.; Eggeler, G.; Ludwig, A.

    2017-01-01

    Advanced engineering applications require new and improved shape memory alloys in bulk and thin-film form. While many Ti-Ni-based systems have been studied so far, the Ti-Ni-Y materials system was not studied in detail concerning its bulk and thin-film shape memory properties. For this reason, a Ti-Ni-Y thin-film materials library focussing on compositions close to Ni50Ti50 was fabricated by combinatorial magnetron sputtering. This library was characterized by high-throughput methods and the compositional range where phase transformations occur was identified. Ti-Ni-Y thin films exhibit a very narrow hysteresis width ∆T and allow to precisely adjust ∆T. Based on the promising results of Ti-Ni-Y thin films, which can be directly applied in microsystems, bulk alloys were fabricated in order to explore how thin-film and bulk properties of different Ti-Ni-Y compositions correlate. It turned out that Ti-Ni-Y bulk materials show different phase transformation properties compared to thin films, most importantly higher ∆T. The differences between thin-film and bulk material are discussed.

  17. Composition, Constitution and Phase Transformation Behavior in Thin-Film and Bulk Ti-Ni-Y

    Science.gov (United States)

    König, D.; Frowein, P.; Wieczorek, A.; Frenzel, J.; Hamann, S.; Eggeler, G.; Ludwig, A.

    2017-03-01

    Advanced engineering applications require new and improved shape memory alloys in bulk and thin-film form. While many Ti-Ni-based systems have been studied so far, the Ti-Ni-Y materials system was not studied in detail concerning its bulk and thin-film shape memory properties. For this reason, a Ti-Ni-Y thin-film materials library focussing on compositions close to Ni50Ti50 was fabricated by combinatorial magnetron sputtering. This library was characterized by high-throughput methods and the compositional range where phase transformations occur was identified. Ti-Ni-Y thin films exhibit a very narrow hysteresis width ∆ T and allow to precisely adjust ∆ T. Based on the promising results of Ti-Ni-Y thin films, which can be directly applied in microsystems, bulk alloys were fabricated in order to explore how thin-film and bulk properties of different Ti-Ni-Y compositions correlate. It turned out that Ti-Ni-Y bulk materials show different phase transformation properties compared to thin films, most importantly higher ∆ T. The differences between thin-film and bulk material are discussed.

  18. Structural, optical and AC conductivity studies on alloy ZnO–Zn{sub 2}SnO{sub 4} (ZnO–ZTO) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dridi, R.; Saafi, I.; Mhamdi, A. [Unité de Physique des dispositifs à Semi-conducteurs UPDS, Faculté des Sciences de Tunis, Tunis El Manar University (Tunisia); Matri, A. [Laboratoire de Physique des Matériaux, Département de Physique, Faculté des Sciences de Bizerte, Carthage University, 7021 Zarzouna (Tunisia); Yumak, A. [Physics Department, Faculty of Arts and Sciences, Marmara University, 34722 Göztepe, Istanbul (Turkey); Haj Lakhdar, M.; Amlouk, A. [Unité de Physique des dispositifs à Semi-conducteurs UPDS, Faculté des Sciences de Tunis, Tunis El Manar University (Tunisia); Boubaker, K., E-mail: mmbb11112000@yahoo.fr [Unité de Physique des dispositifs à Semi-conducteurs UPDS, Faculté des Sciences de Tunis, Tunis El Manar University (Tunisia); Amlouk, M. [Unité de Physique des dispositifs à Semi-conducteurs UPDS, Faculté des Sciences de Tunis, Tunis El Manar University (Tunisia)

    2015-06-15

    Highlights: • AC conductivity is consistent with model of correlated barrier hopping (CBH). • Relaxation processes are described by the Cole–Cole model. • Maximum barrier height W{sub m} is in good agreement with CBH theory as suggested by Elliott. • The relaxation phenomenon describes the same mechanism at various temperatures. - Abstract: This work deals with structural and electrical investigations on ZnO–Zn{sub 2}SnO{sub 4} sprayed thin films grown on glass substrates at 460 °C. The structural, morphological and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and UV–visible spectrophotometry. XRD results describe the existence of the ZnO and Zn{sub 2}SnO{sub 4} phases for various temperatures. AFM micrographs indicate the increase of roughness by increasing temperature. Finally, the electrical conductivity, conduction mechanism, relaxation model of these films was indeed studied by means of the impedance spectroscopy technique in the frequency range 5 Hz–13 MHz at various temperatures (220–280 °C). Besides, the frequency and temperature dependence of AC conductivity measurements, as well as Lattice Compatibility Theory (LCT) patterns, have been analyzed under the structural change framework when the annealing process is undertaken.

  19. Preparation and Properties of Amorphous NiFe/Cu/NiFe Thin Films

    Institute of Scientific and Technical Information of China (English)

    YE Yun; JIANG Ya-dong; HU Wen-cheng; ZENG Hong-juan

    2004-01-01

    The amorphous of Permalloy on the copper subtract was studied using composite electroplating method. A portion of hydrogen brings the counteraction on the surface of cathode leading nickel-iron alloys to be anomalous in the process of co-depositing. The results of X-ray diffraction (XRD) show that the Ni-Fe alloys layer is amorphous. The Giant Magneto -Impedance (GMI) effect of Ni-Fe alloys was obtained under the optimal conditions, dependence on the soft magnetic property of Ni-Fe amorphous thin film. As a result, the ratios△ Z/Z of NiFe/Cu/NiFe amorphous thin film are 30% at 40 kHz which is in low frequency. Furthermore, the GMI value of NiFe/Cu/NiFe amorphous thin film with a sandwich structure is higher than that of single-layer ferromagnetic films of the same thickness.

  20. Electrochemical preparation of Er-Co-Bi thin film in organic bath by cyclic electrodeposition method

    Institute of Scientific and Technical Information of China (English)

    李高仁; 童叶翔; 刘冠昆

    2004-01-01

    Cyclic electrodeposition was used to investigate the preparation of Er-Co-Bi alloy thin film in DMSO system. Experimental results indicate that Er-Co-Bi alloy thin film containing 14.83 %- 32.65 % Er is prepared from 0. 1 mol/L ErCl3 +0. 1 mol/L CoCl2 + 0.1 mol/L Bi(NO3 )3 + 0.1 mol/L LiCl+DMSO system by cyclic electrodeposition on Cu substrate. The optimum cyclic potential of electrodeposition is that upper potential is within a potential range from -0.50 V to -1.00 V and lower potential is within a potential range from -2.00 V to -2.60 V.The surface of alloy thin film observed by scanning electron microscope is black, adhesive and has metallic luster.The film is amorphous proved by the X-ray diffractometry.

  1. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  2. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  3. Shape memory alloys. Ultralow-fatigue shape memory alloy films.

    Science.gov (United States)

    Chluba, Christoph; Ge, Wenwei; Lima de Miranda, Rodrigo; Strobel, Julian; Kienle, Lorenz; Quandt, Eckhard; Wuttig, Manfred

    2015-05-29

    Functional shape memory alloys need to operate reversibly and repeatedly. Quantitative measures of reversibility include the relative volume change of the participating phases and compatibility matrices for twinning. But no similar argument is known for repeatability. This is especially crucial for many future applications, such as artificial heart valves or elastocaloric cooling, in which more than 10 million transformation cycles will be required. We report on the discovery of an ultralow-fatigue shape memory alloy film system based on TiNiCu that allows at least 10 million transformation cycles. We found that these films contain Ti2Cu precipitates embedded in the base alloy that serve as sentinels to ensure complete and reproducible transformation in the course of each memory cycle.

  4. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  5. Interfacial Effects on Pentablock Ionomer Thin Films

    Science.gov (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw

    2011-03-01

    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  6. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit

    2014-01-01

    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  7. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  8. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail: tambauh@gmail.com; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  9. Determination of structural, mechanical and corrosion properties of Nb{sub 2}O{sub 5} and (Nb{sub y}Cu{sub 1−y})O{sub x} thin films deposited on Ti6Al4V alloy substrates for dental implant applications

    Energy Technology Data Exchange (ETDEWEB)

    Mazur, M. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Kalisz, M., E-mail: malgorzata.kalisz@its.waw.pl [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Wojcieszak, D. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Grobelny, M. [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mazur, P. [Wroclaw University, Institute of Experimental Physics, Max Born 9, 50-204 Wroclaw (Poland); Kaczmarek, D.; Domaradzki, J. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland)

    2015-02-01

    In this paper comparative studies on the structural, mechanical and corrosion properties of Nb{sub 2}O{sub 5}/Ti and (Nb{sub y}Cu{sub 1−y})O{sub x}/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64 GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb{sub 2}O{sub 5} film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb{sub 0.75}Cu{sub 0.25})O{sub x} thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. - Highlights: • Nb{sub 2}O{sub 5} and Nb{sub 2}O{sub 5}:Cu thin films were deposited on a Ti–Al–V surface using the magnetron sputtering.

  10. Synthesis and performance of Zn-Ni-P thin films

    Science.gov (United States)

    Soare, V.; Burada, M.; Constantin, I.; Ghita, M.; Constantin, V.; Miculescu, F.; Popescu, A. M.

    2015-03-01

    The electroplating of Zn-Ni-P thin film alloys from a sulfate bath containing phosphoric and phosphorous acid was investigated. The bath composition and the deposition parameters were optimized through Hull cell experiments, and the optimum experimental conditions were determined (pH = 2, temperature = 298-313 K, zinc sulfate concentration = 30 g·L-1, EDTA concentration = 15 g·L-1, and current density, = ,1.0-2.0 A·dm-2). The SEM analysis of the coating deposited from the optimum bath revealed fine-grained deposits of the alloy in the presence of EDTA. Optical microscopy analysis indicated an electrodeposited thin film with uniform thickness and good adhesion to the steel substrate. The good adherence of the coatings was also demonstrated by the scratch tests that were performed, with a maximum determined value of 25 N for the critical load. Corrosion resistance tests revealed good protection of the steel substrate by the obtained Zn-Ni-P coatings, with values up to 85.89% for samples with Ni contents higher than 76%. The surface analysis of the thin film samples before and after corrosion was performed by X-ray photoelectron spectroscopy (XPS). Project support by the Partnership Romanian Research Program (PNCDI2), CORZIFILM Project nr.72-221/2008-2011 and “EU (ERDF) and Romanian Government” that allowed for acquisition of the research infrastructure under POS-CEEO 2.2.1 project INFRANANOCHEM-Nr.19/01.03.2009.

  11. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  12. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  13. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.

    1972-01-01

    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  14. Structural Investigation of Photocatalyst Solid Ag1−xCuxInS2 Quaternary Alloys Sprayed Thin Films Optimized within the Lattice Compatibility Theory (LCT Scope

    Directory of Open Access Journals (Sweden)

    A. Colantoni

    2014-01-01

    Full Text Available CuxAg1−xInS2 solid thin films were fabricated through a low-cost process. Particular process-related enhanced properties lead to reaching a minimum of lattice mismatch between absorber and buffer layers within particular solar cell devices. First, copper-less samples X-ray diffraction analysis depicts the presence of AgInS2 ternary compound in chalcopyrite tetragonal phase with privileged (112 peak (d112=1.70 Å according to JCPDS 75-0118 card. Second, when x content increases, we note a shift of the same preferential orientation (112 and its value reaches 1.63 Å corresponding to CuInS2 chalcopyrite tetragonal material according to JCPDS 89-6095 file. Finally, the formation and stability of these quaternaries have been discussed in terms of the lattice compatibility in relation with silver-copper duality within indium disulfide lattice structure. Plausible explanations for the extent and dynamics of copper incorporation inside AgInS2 elaborated ternary matrices have been proposed.

  15. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  16. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  17. Exploration of exciton delocalization in organic crystalline thin films

    Science.gov (United States)

    Hua, Kim; Manning, Lane; Rawat, Naveen; Ainsworth, Victoria; Furis, Madalina

    The electronic properties of organic semiconductors play a crucial role in designing new materials for specific applications. Our group recently found evidence for a rotation of molecular planes in phthalocyanines that is responsible for the disappearance of a delocalized exciton in these systems for T >150K.................()().......1 In this study, we attempt to tune the exciton delocalization of small organic molecules using strain effects and alloying different molecules in the same family. The exciton behavior is monitored using time- and polarization resolved photolumniscence (PL) spectroscopy as a function of temperature. Specifically, organic crystalline thin films of octabutoxy phthalocyanine (H2OBPc), octyloxy phthalocyanines and H-bonded semiconductors such as the quinacridone and indigo derivatives are deposited on flexible substrates (i.e. Kapton and PEN) using an in-house developed pen-writing method.........2 that results in crystalline films with macroscopic long range order. The room temperature PL studies show redshift and changes in polarization upon bending of the film. Crystalline thin films of alloyed H2OBPc and octabutoxy naphthalocyanine with ratios ranging from 1:1 to 100:1 fabricated on both sapphire and flexible substrates are also explored using the same PL spectroscopy to elucidate the behaviors of delocalized excitons. .1N. Rawat, et al., J Phys Chem Lett 6, 1834 (2015). 2R. L. Headrick, et al., Applied Physics Letters 92, 063302 (2008). NSF DMR-1056589, NSF DMR-1062966.

  18. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  19. Soft Magnetic Properties of High-Entropy Fe-Co-Ni-Cr-Al-Si Thin Films

    Directory of Open Access Journals (Sweden)

    Pei-Chung Lin

    2016-08-01

    Full Text Available Soft magnetic properties of Fe-Co-Ni-Al-Cr-Si thin films were studied. As-deposited Fe-Co-Ni-Al-Cr-Si nano-grained thin films showing no magnetic anisotropy were subjected to field-annealing at different temperatures to induce magnetic anisotropy. Optimized magnetic and electrical properties of Fe-Co-Ni-Al-Cr-Si films annealed at 200 °C are saturation magnetization 9.13 × 105 A/m, coercivity 79.6 A/m, out-of-plane uniaxial anisotropy field 1.59 × 103 A/m, and electrical resistivity 3.75 μΩ·m. Based on these excellent properties, we employed such films to fabricate magnetic thin film inductor. The performance of the high entropy alloy thin film inductors is superior to that of air core inductor.

  20. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  1. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  2. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  3. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  4. Crystallographic and magnetostriction properties of Fe and FeB-alloy thin films formed on MgO(100 single-crystal substrates

    Directory of Open Access Journals (Sweden)

    Ohtake M.

    2013-01-01

    Full Text Available Fe(100bcc single-crystal film, Fe-B amorphous film, and Fe-B film consisting of a mixture of epitaxial bcc(100 crystal and amorphous are prepared on MgO(100 single-crystal substrates. The influence of crystallographic property on the magnetostriction behavior under rotating magnetic fields is investigated. The output waveform of magnetostriction is sinusoidal for the amorphous film, whereas that of single-crystal film shows a triangle shape. 90° magnetic domain walls are observed for the single-crystal Fe film and the film shows a four-fold symmetry in in-plane magnetic anisotropy. The observation of triangle waveforms is related to the domain wall motion in magnetically unsaturated Fe(100bcc film under rotating magnetic fields. A distortion from triangle wave is observed for the Fe-B film consisting of a mixture of bcc-crystal and amorphous. The magnetostriction behavior is influenced by the magnetization structure.

  5. Adhesion and friction of thin metal films

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  6. Silver: high performance anode for thin film lithium ion batteries

    Science.gov (United States)

    Taillades, G.; Sarradin, J.

    Among metals and intermetallic compounds, silver exhibits a high specific capacity according to the formation of different Ag-Li alloys (up to AgLi 12) in a very low voltage range versus lithium (0.250-0 V). Electrochemical results including Galvanostatic Intermittent Titration Technique (GITT) as well as cycling behaviour experiments confirmed the interesting characteristics of silver thin film electrodes prepared by radio frequency (r.f.) sputtering. XRD patterns recorded at different electrochemical stages of the alloying/de-alloying processes showed the complexity of the silver-lithium system under dynamic conditions. Cycling life depends on several parameters and particularly of the careful choice of cut-off voltages. In very well monitored conditions, galvanostatic cycles exhibited flat reversible plateaus with a minimal voltage value (0.050 V) between charge and discharge, a feature of great interest in the use of an electrode. The first results of a lithium ion battery with both silver and LiMn 1.5Ni 0.5O 4 thin films are presented.

  7. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  8. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail: okrupka@mail.ru; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)

    2008-10-31

    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  9. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  10. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  11. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  12. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  13. Tungsten-doped thin film materials

    Science.gov (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  14. Thin film composition with biological substance and method of making

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, A.A.; Song, L.

    1999-09-28

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphous structures, organic crystalline structures, and organic amorphous structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobial, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflammatory, steroid, nonsteroid anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor consisting of the compositions listed above.

  15. Thin film composition with biological substance and method of making

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Allison A. (Kennewick, WA); Song, Lin (Richland, WA)

    1999-01-01

    The invention provides a thin-film composition comprising an underlying substrate of a first material including a plurality of attachment sites; a plurality of functional groups chemically attached to the attachment sites of the underlying substrate; and a thin film of a second material deposited onto the attachment sites of the underlying substrate, and a biologically active substance deposited with the thin-film. Preferably the functional groups are attached to a self assembling monolayer attached to the underlying substrate. Preferred functional groups attached to the underlying substrate are chosen from the group consisting of carboxylates, sulfonates, phosphates, optionally substituted, linear or cyclo, alkyl, alkene, alkyne, aryl, alkylaryl, amine, hydroxyl, thiol, silyl, phosphoryl, cyano, metallocenyl, carbonyl, and polyphosphate. Preferred materials for the underlying substrate are selected from the group consisting of a metal, a metal alloy, a plastic, a polymer, a proteic film, a membrane, a glass or a ceramic. The second material is selected from the group consisting of inorganic crystalline structures, inorganic amorphus structures, organic crystalline structures, and organic amorphus structures. Preferred second materials are phosphates, especially calcium phosphates and most particularly calcium apatite. The biologically active molecule is a protein, peptide, DNA segment, RNA segment, nucleotide, polynucleotide, nucleoside, antibiotic, antimicrobal, radioisotope, chelated radioisotope, chelated metal, metal salt, anti-inflamatory, steriod, nonsteriod anti-inflammatory, analgesic, antihistamine, receptor binding agent, or chemotherapeutic agent, or other biologically active material. Preferably the biologically active molecule is an osteogenic factor the compositions listed above.

  16. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  17. Method for bonding thin film thermocouples to ceramics

    Science.gov (United States)

    Kreider, Kenneth G.

    1993-01-01

    A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

  18. Molecular release from patterned nanoporous gold thin films

    Science.gov (United States)

    Kurtulus, Ozge; Daggumati, Pallavi; Seker, Erkin

    2014-05-01

    Nanostructured materials have shown significant potential for biomedical applications that require high loading capacity and controlled release of drugs. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a promising novel material that benefits from compatibility with microfabrication, tunable pore morphology, electrical conductivity, well-established gold-thiol conjugate chemistry, and biocompatibility. While np-Au's non-biological applications are abundant, its performance in the biomedical field is nascent. In this work, we employ a combination of techniques including nanoporous thin film synthesis, quantitative electron microscopy, fluorospectrometry, and electrochemical surface characterization to study loading capacity and molecular release kinetics as a function of film properties and discuss underlying mechanisms. The sub-micron-thick sputter-coated nanoporous gold films provide small-molecule loading capacities up to 1.12 μg cm-2 and molecular release half-lives between 3.6 hours to 12.8 hours. A systematic set of studies reveals that effective surface area of the np-Au thin films on glass substrates plays the largest role in determining loading capacity. The release kinetics on the other hand depends on a complex interplay of micro- and nano-scale morphological features.Nanostructured materials have shown significant potential for biomedical applications that require high loading capacity and controlled release of drugs. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a promising novel material that benefits from compatibility with microfabrication, tunable pore morphology, electrical conductivity, well-established gold-thiol conjugate chemistry, and biocompatibility. While np-Au's non-biological applications are abundant, its performance in the biomedical field is nascent. In this work, we employ a combination of techniques including nanoporous thin film synthesis, quantitative electron microscopy

  19. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2012-01-15

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  20. Sprayed lanthanum doped zinc oxide thin films

    Science.gov (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  1. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  2. HITPERM soft magnetic underlayers for perpendicular thin film media

    Science.gov (United States)

    Kumar, S.; Ohkubo, T.; Laughlin, D. E.

    2002-05-01

    In this work, a class of nanocrystalline alloys, HITPERM (Fe, Co)-M-B-Cu (M=Zr, Hf, Nb, and etc.) found to exhibit excellent soft-magnetic properties in bulk were used as soft-magnetic underlayers for perpendicular thin film media. A Ti intermediate layer was used to promote a (00ṡ2) texture and exchange de-couple the magnetic layer (CoCrPt) from the soft-magnetic underlayer. Specimens were deposited at both room and elevated temperature (˜ 250 °C). The results of x-ray diffraction and transmission electron microscope structural studies, along with magnetic properties are presented.

  3. Magnetowetting of Ferrofluidic Thin Liquid Films

    Science.gov (United States)

    Tenneti, Srinivas; Subramanian, Sri Ganesh; Chakraborty, Monojit; Soni, Gaurav; Dasgupta, Sunando

    2017-03-01

    An extended meniscus of a ferrofluid solution on a silicon surface is subjected to axisymmetric, non-uniform magnetic field resulting in significant forward movement of the thin liquid film. Image analyzing interferometry is used for accurate measurement of the film thickness profile, which in turn, is used to determine the instantaneous slope and the curvature of the moving film. The recorded video, depicting the motion of the film in the Lagrangian frame of reference, is analyzed frame by frame, eliciting accurate information about the velocity and acceleration of the film at any instant of time. The application of the magnetic field has resulted in unique changes of the film profile in terms of significant non-uniform increase in the local film curvature. This was further analyzed by developing a model, taking into account the effect of changes in the magnetic and shape-dependent interfacial force fields.

  4. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  5. Pulsed laser deposition of ferroelectric thin films

    Science.gov (United States)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  6. Photoluminescence Study of Copper Selenide Thin Films

    Science.gov (United States)

    Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.

    2011-10-01

    Thin films of Copper Selenide of composition of composition Cu7Se4 with thickness 350 nm are deposited on glass substrate at a temperature of 498 K±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%) and Selenium (99.99%) as the elemental starting material. The deposited film is characterized structurally using X-ray Diffraction. The structural parameters such as lattice constant, particle size, dislocation density; number of crystallites per unit area and strain in the film are evaluated. Photoluminescence of the film is analyzed at room temperature using Fluoro Max-3 Spectrofluorometer.

  7. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  8. Nano-sized Thin Films Fabricated by Ion Beam Sputtering and Its Properties

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Nanoscale thick amorphous Ni-Cr alloy thin films were fabricated by low-energy ion beam sputtering technology; then the as-deposited samples experienced rapid thermal process to realize the transformation from amorphous to crystalline state. The film thickness was measured with α-stylus surface profiler, the structure and the compositions of the films were confirmed by low angle X-ray diffraction and scanning auger electron microprobe respectively, and the surface topography was characterized by scanning electron microscope and scanning probe microscope. Electrical property of the films was measured by fourpoint probe. The experimental results illustrate that the combined processes of ion beam sputtering and rapid thermal process are effective for fabrication nanoscale Ni-Cr alloy thin film with good properties.

  9. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  10. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  11. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  12. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  13. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  14. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  15. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  16. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  17. Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

    OpenAIRE

    Zhouling Wang; Yu Hu; Wei Li; Guanggen Zeng; Lianghuan Feng; Jingquan Zhang; Lili Wu; Jingjing Gao

    2014-01-01

    Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was high...

  18. Ti-Nb thin films deposited by magnetron sputtering on stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, E. David; Niemeyer, Terlize C.; Afonso, Conrado R. M.; Nascente, Pedro A. P., E-mail: nascente@ufscar.br [Department of Materials Engineering, Federal University of Sao Carlos, CEP 13565-905 Sao Carlos, São Paulo (Brazil)

    2016-03-15

    Thin films of Ti-Nb alloys were deposited on AISI 316L stainless steel substrate by magnetron sputtering, and the structure, composition, morphology, and microstructure of the films were analyzed by means of x-ray diffraction (XRD), (scanning) transmission electron microscopy (TEM) coupled with energy-dispersive x-ray spectroscopy, atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS). Thin films of four compositions were produced: Ti{sub 85}Nb{sub 15} (Ti-26 wt. % Nb), Ti{sub 80}Nb{sub 20} (Ti-33 wt. % Nb), Ti{sub 70}Nb{sub 30} (Ti-45 wt. % Nb), and Ti{sub 60}Nb{sub 40} (Ti-56 wt. % Nb). Structural characterization by XRD indicated that only the β phase was present in the thin films and that the increase in the Nb content modified the alloy film texture. These changes in the film texture, also detected by TEM analysis, were attributed to different growth modes related to the Nb content in the alloy films. The mean grain sizes measured by AFM increased with the Nb amount (from 197 to 222 nm). XPS analysis showed a predominance of oxidized Ti and Nb on the film surfaces and an enrichment of Ti.

  19. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  20. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  1. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  2. Electron beam deposition and characterization of thin film Ti-Ni for shape memory applications

    Institute of Scientific and Technical Information of China (English)

    NOH Hae-Yong; JEE Kwang-Koo; LEE Kyu-Hwan; LEE Young-Kook

    2006-01-01

    Thin film of Ti-Ni alloy has a potential to perform the microactuation functions required in the microelectromechanical system (MEMS).It is essential, however, to have good uniformity in both chemical composition and thickness to realize its full potential as an active component of MEMS devices.Electron beam evaporation technique was employed in this study to fabricate the thin films of Ti-Ni alloy on different substrates.The targets used for the evaporation were first prepared by electron beam melting.The uniformity of composition and microstructure of the thin films were characterized by electron probe microanalysis (EPMA), Auger electron spectroscopy (AES), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM).The mechanical property of the thin films was evaluated by the nano-indentation test.The martensitic transformation temperature was measured by differential scanning calorimetry (DSC).It is confirmed that the chemical composition of deposited thin films is identical to that of the target materials.Furthermore, results from depth profiling of the chemical composition variation reveal that the electron beam evaporation process yields better compositional homogeneity than other conventional methods such as sputtering and thermal evaporation.Microstructural observation by TEM shows that nanometer size precipitates are preferentially distributed along the grain boundaries of a few micron size grains.The hardness and elastic modulus of thin films decreases with an increase in Ti contents.

  3. Magnetite thin films: A simulational approach

    Energy Technology Data Exchange (ETDEWEB)

    Mazo-Zuluaga, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)]. E-mail: jomazo@fisica.udea.edu.co; Restrepo, J. [Grupo de Estado Solido y Grupo de Instrumentacion Cientifica y Microelectronica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia)

    2006-10-01

    In the present work the study of the magnetic properties of magnetite thin films is addressed by means of the Monte Carlo method and the Ising model. We simulate LxLxd magnetite thin films (d being the film thickness and L the transversal linear dimension) with periodic boundary conditions along transversal directions and free boundary conditions along d direction. In our model, both the three-dimensional inverse spinel structure and the interactions scheme involving tetrahedral and octahedral sites have been considered in a realistic way. Results reveal a power-law dependence of the critical temperature with the film thickness accordingly by an exponent {nu}=0.81 and ruled out by finite-size scaling theory. Estimates for the critical exponents of the magnetization and the specific heat are finally presented and discussed.

  4. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  5. Environmentally stable sputter-deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, D.J.

    1978-03-01

    Accelerated corrosion data are presented for the titanium-silver and chrome-gold thin film metallization systems presently used at Sandia Laboratories. Improvements in corrosion, hence reliability, as a result of interposing a thin intermediate layer of either platinum or palladium are shown. Potentiometric measurements showing the alteration of corrosion potential with the use of palladium for the titanium-silver system are also presented.

  6. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  7. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  8. Emittance Theory for Thin Film Selective Emitter

    Science.gov (United States)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  9. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  10. Nanomechanical characterization of multilayered thin film structures for digital micromirror devices

    Energy Technology Data Exchange (ETDEWEB)

    Wei Guohua; Bhushan, Bharat; Joshua Jacobs, S

    2004-08-15

    The digital micromirror device (DMD), used for digital projection displays, comprises a surface-micromachined array of up to 2.07 million aluminum micromirrors (14 {mu}m square and 15 {mu}m pitch), which switch forward and backward thousands of times per second using electrostatic attraction. The nanomechanical properties of the thin-film structures used are important to the performance of the DMD. In this paper, the nanomechanical characterization of the single and multilayered thin film structures, which are of interest in DMDs, is carried out. The hardness, Young's modulus and scratch resistance of TiN/Si, SiO{sub 2}/Si, Al alloy/Si, TiN/Al alloy/Si and SiO{sub 2}/TiN/Al alloy/Si thin-film structures were measured using nanoindentation and nanoscratch techniques, respectively. The residual (internal) stresses developed during the thin film growth were estimated by measuring the radius of curvature of the sample before and after deposition. To better understand the nanomechanical properties of these thin film materials, the surface and interface analysis of the samples were conducted using X-ray photoelectron spectroscopy. The nanomechanical properties of these materials are analyzed and the impact of these properties on micromirror performance is discussed.

  11. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  12. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  13. Silver buffer layers for YBCO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Azoulay, J. [Tel Aviv Univ. (Israel). Center for Technol. Education Holon

    1999-09-01

    A simple economical conventional vacuum system was used for evaporation of YBCO thin films on as-deposited unbuffered Ag layers on MgO substrates. The subsequent heat treatment was carried out in low oxygen partial pressure at a relative low temperature and short dwelling time. The films thus obtained were characterized for electrical properties using dc four probe electrical measurements and inspected for structural properties and chemical composition by scanning electron microscopy (SEM). (orig.)

  14. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  15. Pt-based Thin Films as Efficient and Stable Catalysts for Oxygen Electroreduction

    DEFF Research Database (Denmark)

    Zamburlini, Eleonora

    at the cathode of Polymer Electrolyte Membrane Fuel Cells (PEMFCs). Herein the fabrication method, which consists of co-sputtering of thin films, is presented in detail, explaining the challenges one must face in order to fabricate oxygen-free Pt-lanthanides and Pt-early transition metals alloys...... 27 nm. A brief study was conducted at Stanford University, in collaboration with the Jaramillo group and SLAC, on Pt and Pt5Gd films deposited via evaporation. The results underlined the importance of an oxygen-free environment when dealing with Pt-lanthanides thin film fabrication....

  16. XPS analysis of the activation process in non-evaporable getter thin films

    CERN Document Server

    Lozano, M

    2000-01-01

    The surface activation process of sputter-coated non-evaporable getter (NEG) thin films based on Ti-Zr and Ti-Zr-V alloys has been studied in situ by means of X-ray photoelectron spectroscopy. After exposure of the NEG thin films to ambient air they become reactivated after a thermal treatment in an ultrahigh vacuum. In our case the films are heated up to ~250 degrees C for 2 h in a base pressure of ~10/sup -9/ Torr. (18 refs).

  17. STUDY ON Ni-Cr SYSTEM SOLAR SELECTIVE THIN FILMS PREPARED BY MAGNETRON REACTIVE SPUTTERING PROCESS

    Institute of Scientific and Technical Information of China (English)

    B.W. Wang; H. Shen

    2002-01-01

    Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactivesputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as targetmaterial and copper sheets as substrate. Using SEM, Spectrophotometer and Talystepto analyze the relations between the selective characteristic and the structure, theformation and the thickness of the thin films. The aim is to obtain good solar selectivethin films with high absorptance and low emittance, which is applied to flat plate solarheat collectors.

  18. Workshop on thin film thermal conductivity measurements

    Science.gov (United States)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  19. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  20. Pyroelectric coupling in thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, Victor G.; Shvydka, Diana [Department of Physics and Astronomy, University of Toledo, OH (United States)

    2007-07-15

    We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se{sub 2} absorber layers are discussed. Band diagram of a pyroelectric (CdS) based PV junction. Arrows represent the charge carrier photo-generation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Study of iron mononitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil, E-mail: mgupta@csr.res.in; Gupta, Mukul, E-mail: mgupta@csr.res.in; Phase, D. M., E-mail: mgupta@csr.res.in; Reddy, V. R., E-mail: mgupta@csr.res.in; Gupta, Ajay, E-mail: mgupta@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore,-452001 (India)

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  2. Epitaxy of layered semiconductor thin films

    Science.gov (United States)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  3. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  4. NiTi thin films on a flexible substrate: Fabrication & Characterization

    NARCIS (Netherlands)

    Kotnur, V.G.

    2015-01-01

    NiTi (Nickel Titanium) is a shape memory alloy (SMA) known for shape memory effect and superelasticity. The shape memory effect and superelasticity allows NiTi to be strained reversibly unto 6-8%. NiTi thin films are of technological interest as actuator materials in microelectromechanical systems

  5. Correlated dewetting patterns in thin polystyrene films

    Energy Technology Data Exchange (ETDEWEB)

    Neto, Chiara [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Jacobs, Karin [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Seemann, Ralf [Department of Applied Physics, University of Ulm, Albert Einstein Allee 11, D-89069 Ulm (Germany); Blossey, Ralf [Centre for Bioinformatics, Saarland University, PO Box 151150, D-66041 Saarbruecken (Germany); Becker, Juergen [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany); Gruen, Guenther [Institute of Applied Mathematics, University of Bonn, Beringstr. 6, D-53115 Bonn (Germany)

    2003-01-15

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  6. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  7. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  8. Ternary compound thin film solar cells

    Science.gov (United States)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  9. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  10. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  11. Bauschinger effect in unpassivated freestanding thin films

    NARCIS (Netherlands)

    Shishvan, S.S.; Nicola, L.; Van der Giessen, E.

    2010-01-01

    Two-dimensional (2D) discrete dislocation plasticity simulations are carried out to investigate the Bauschinger effect (BE) in freestanding thin films. The BE in plastic flow of polycrystalline materials is generally understood to be caused by inhomogeneous deformation during loading, leading to res

  12. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  13. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  14. Recent progress in thin film organic photodiodes

    NARCIS (Netherlands)

    Inganäs, Olle; Roman, Lucimara S.; Zhang, Fengling; Johansson, D.M.; Andersson, M.R.; Hummelen, J.C.

    2001-01-01

    We review current developments in organic photodiodes, with special reference to multilayer thin film optics, and modeling of organic donor-acceptor photodiodes. We indicate possibilities to enhance light absorption in devices by nanopatterning as well as by blending, and also discuss materials scie

  15. Flexible thin-film NFC tags

    NARCIS (Netherlands)

    Myny, K.; Tripathi, A.K.; Steen, J.L. van der; Cobb, B.

    2015-01-01

    Thin-film transistor technologies have great potential to become the key technology for leafnode Internet of Things by utilizing the NFC protocol as a communication medium. The main requirements are manufacturability on flexible substrates at a low cost while maintaining good device performance char

  16. Welding Wires To Thin Thermocouple Films

    Science.gov (United States)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  17. Quasifree Mg–H thin films

    NARCIS (Netherlands)

    Baldi, A.; Palmisano, V.; Gonzalez-Silveira, M.; Pivak, Y.; Slaman, M.; Schreuders, H.; Dam, B.; Griessen, R.

    2009-01-01

    The thermodynamics of hydrogen absorption in Pd-capped Mg films are strongly dependent on the magnesium thickness. In the present work, we suppress such dependency by inserting a thin Ti layer between Mg and Pd. By means of optical measurements, we show that the surface energy contribution to the de

  18. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  19. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  20. Intelligent Processing of Ferroelectric Thin Films

    Science.gov (United States)

    1994-05-31

    unsatisfactory. To detect the electroopic effects of thin films deposited on opaque substrates a waveguide refractometry of category 3 was reported. An advantage...of the waveguide refractometry is its capability of resolving the change in ordinary index from the change in the extraordinary index. Some successes

  1. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  2. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  3. Thin-Film Solid Oxide Fuel Cells

    Science.gov (United States)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  4. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  5. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  6. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  7. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  8. Nonlocal thin films in calculations of the Casimir force

    NARCIS (Netherlands)

    Esquivel-Sirvent, R.; Svetovoy, V.B.

    2005-01-01

    The Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than th

  9. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  10. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  11. Impact of the De-Alloying Kinetics and Alloy Microstructure on the Final Morphology of De-Alloyed Meso-Porous Metal Films

    Directory of Open Access Journals (Sweden)

    Bao Lin

    2014-10-01

    Full Text Available Nano-textured porous metal materials present unique surface properties due to their enhanced surface energy with potential applications in sensing, molecular separation and catalysis. In this paper, commercial alloy foils, including brass (Cu85Zn15 and Cu70Zn30 and white gold (Au50Ag50 foils have been chemically de-alloyed to form nano-porous thin films. The impact of the initial alloy micro-structure and number of phases, as well as chemical de-alloying (DA parameters, including etchant concentration, time and solution temperature on the final nano-porous thin film morphology and properties were investigated by electron microscopy (EM. Furthermore, the penetration depth of the pores across the alloys were evaluated through the preparation of cross sections by focus ion beam (FIB milling. It is demonstrated that ordered pores ranging between 100 nm and 600 nm in diameter and 2–5 μm in depth can be successfully formed for the range of materials tested. The microstructure of the foils were obtained by electron back-scattered diffraction (EBSD and linked to development of pits across the material thickness and surface during DA. The role of selective etching of both noble and sacrificial metal phases of the alloy were discussed in light of the competitive surface etching across the range of microstructures and materials tested.

  12. Titanium-zirconium-phosphonate hybrid film on 6061 aluminum alloy

    Institute of Scientific and Technical Information of China (English)

    Shuanghong WANG; Lei WANG; Changsheng LIU

    2011-01-01

    Three titanium-zirconium-phosphonate hybrid films were formed on AA6061 aluminum alloy by immersing in fluorotitanic acid and fluorozirconic acid based solution containing different phosphonic acids for protective coatings of aluminium alloy. The corrosion resistance of three hybrid films as the substitute for chromate film were evaluated and compared. The neutral salt spray test was explored,the immersion test was conducted and electrochemical test was also executed. The hybrid films exhibited well-pleasing corrosion resistance and adhesion to epoxy resin paints. It was found out that the hybrid films could efficiently be a substitute for chromate based primer over aluminium alloy.

  13. MISSE 5 Thin Films Space Exposure Experiment

    Science.gov (United States)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  14. Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

    Science.gov (United States)

    Woods, Lawrence M.; Kalla, Ajay; Gonzalez, Damian; Ribelin, Rosine

    2005-01-01

    Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

  15. Thin-film semiconductor rectifier has improved properties

    Science.gov (United States)

    1966-01-01

    Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

  16. Thin Film Electrochemical Power Cells

    Science.gov (United States)

    1991-01-01

    Anion Intercalating Polymer Cathode", proceedings of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. K. Naoi, W.H...of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. M. Lien and W.H. Smyrl, "An Impedance Study of Polyvinylferrocene...Films", in Transient Techniques in Corrosion Science and Engineering, eds. W.H. Smyrl, et al., Electrochemical Society , 1989. K, Naoi, M.M. Lien and

  17. Film induced intergranular cracking of binary noble alloys

    Energy Technology Data Exchange (ETDEWEB)

    Friedersdorf, F. [Bureau of Mines, Albany, OR (United States); Sieradzki, K. [Arizona State Univ., Tempe, AZ (United States)

    1995-10-01

    Dealloying of a binary noble alloy produces a porous layer rich in the more noble element. Application of a tensile load may initiate a brittle intergranular crack in the dealloyed layer that advances into the unattached material. The relationships between the dealloying potential, dealloyed layer thickness and alloy susceptibility to film induced intergranular cracking have been studied. Ag-Au alloys were studied.

  18. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  19. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  20. Radiation resistance of thin-film solar cells for space photovoltaic power

    Science.gov (United States)

    Woodyard, James R.; Landis, Geoffrey A.

    1991-01-01

    Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

  1. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  2. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  3. A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to achieve low-cost high-efficiency thin-film solar cells, a novel Semiconductor Photovoltaic (PV) active material CuIn1-xGaxSe2 (CIGS) and thin-film Electro-Deposition (ED) technology is explored. Firstly,the PV materials and technologies is investigated, then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported. These results shows that high quality CIGS polycrystalline thin-films can be obtained by the ED method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin-film layers with particle average size of about 2μm of length and around 1.6μm of thickness. The thickness and solargrade quality of CIGS thin-films can be produced with good repeatability. Discussion and analysis on the ED technique, CIGS energy band and sodium (Na) impurity properties, were also performed. The alloy CIGS exhibits not only increasing band-gap with increasing x, but also a change in material properties that is relevant to the device operation. The beneficial impurity Na originating from the low-cost soda-lime glass substrate becomes one prerequisite for high quality CIGS films. These novel material and technology are very useful for low-cost high-efficiency thin-film solar cells and other devices.

  4. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  5. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  6. Cathodoluminescence degradation of PLD thin films

    Science.gov (United States)

    Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Nsimama, P. D.; Dejene, F. B.; Dolo, J. J.

    2010-12-01

    The cathodoluminescence (CL) intensities of Y2SiO5:Ce3+, Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10-6 Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y2SiO5:Ce3+ a luminescent SiO2 layer formed during the electron bombardment. Gd2O3 and SrO thin films formed on the surfaces of Gd2O2S:Tb3+ and SrAl2O4:Eu2+,Dy3+, respectively, due to ESSCRs.

  7. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  8. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  9. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    Science.gov (United States)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  10. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... a change from ZEP resist to double layer of PMMA and always requires preliminary exposure dose-tests and final particular attention for lift-off step. EBL resulted to be more suitable for silver NPs, since the deposition of gold (on top of an adhesion thin titanium layer) leads to a variation and non...

  11. Optical properties and structure of Sb-rich AgInSbTe phase change thin films

    Institute of Scientific and Technical Information of China (English)

    张广军; 顾冬红; 干福熹

    2005-01-01

    A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200 ℃ for 30min,it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190C and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The refiectivity,refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented.The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

  12. Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    Somenath Chatterjee

    2014-01-01

    Full Text Available Multijunction solar cells designed from silicon (Si-germanium (Ge alloy based semiconductor materials exhibit high theoretical efficiencies (19.6% compared to the single junction one. The modeling calculations for all solar cells are done by AMPS 1D simulator. The structure of multi-junction i-layer is designed using heterolayers, starting from pure crystalline Si and increase of Ge mole fraction by 25% until pure Ge layer is reached. The top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s and be absorbed by the layer below, which increases the overall efficiency of the solar cell. Material parameters required to model the absorber layers are calculated and incorporated in the AMPS 1D simulator for optimizing of solar cell parameter values. Simulation results show that considerable efficiency enhancement can be obtained from the addition of the multi-junction layer.

  13. Thin-film amorphous silicon alloy research partnership. Phase 2, Annual technical progress report, 2 February 1996--1 February 1997

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S [United Solar Systems Corp., Troy, MI (United States)

    1997-06-01

    This is Phase II of a 3-phase, 3-year program. It is intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous Si alloy modules. We discuss investigations on back reflectors to improve cell performance and investigate uniformity in performance over a 1-sq.-ft. area. We present results on component cell performance, both in the initial and in the light-degraded states, deposited over a 1-sq.-ft. area. The uniformity in deposited is investigated by studying the performance of subcells deposited over the entire area. We also present results on the performance of triple- junction cells and modules. The modules use grid-lines and encapsulants compatible with our production technology. We discuss the novel laser-processing technique that has bee developed at United Solar to improve energy-conversion efficiency and reduce manufacturing costs. We discuss in detail the optimization of the processing steps, and the performance of a laser-processed, triple- junction device of 12.6 cm{sup 2} area is presented. We also present experimental results on investigations of module reliability.

  14. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  15. INVESTIGATION OF PHOTOELECTROCHROMIC THIN FILM AND DEVICE

    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen

    2005-01-01

    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  16. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  17. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  18. Electrochromism in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, T.J.; Slack, J.L.; Rubin, M.D.

    2000-08-15

    Transparent thin films of copper(I) oxide prepared on conductive SnO2:F glass substrates by anodic oxidation of sputtered copper films or by direct electrodeposition of Cu2O transformed reversibly to opaque metallic copper films when reduced in alkaline electrolyte. In addition, the same Cu2O films transform reversibly to black copper(II) oxide when cycled at more anodic potentials. Copper oxide-to-copper switching covered a large dynamic range, from 85% and 10% photopic transmittance, with a coloration efficiency of about 32 cm2/C. Gradual deterioration of the switching range occurred over 20 to 100 cycles. This is tentatively ascribed to coarsening of the film and contact degradation caused by the 65% volume change on conversion of Cu to Cu2O. Switching between the two copper oxides (which have similar volumes) was more stable and more efficient (CE = 60 cm2/C), but covered a smaller transmittance range (60% to 44% T). Due to their large electrochemical storage capacity and tolerance for alkaline electrolytes, these cathodically coloring films may be useful as counter electrodes for anodically coloring electrode films such as nickel oxide or metal hydrides.

  19. Deposition of La0.8Sr0.2Cr0.97V0.03O3 and MnCr2O4 thin films on ferritic alloy for solid oxide fuel cell application

    DEFF Research Database (Denmark)

    Mikkelsen, Lars; Chen, Ming; Hendriksen, Peter Vang;

    2007-01-01

    Single layer dense films of La0.8Sr0.2Cr0.97V0.03O3 (LSC) and MnCr2O4 with a thickness of 500 nm were deposited on a commercially available ferritic alloy (Crofer 22APU) by large-area Pulsed Laser Deposition. The deposited samples were subsequently oxidized at 1173 K for 500 h in humidified air...

  20. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  1. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  2. EBSD analysis of electroplated magnetite thin films

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.

    2010-05-01

    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  3. Electrostatic Discharge Effects on Thin Film Resistors

    Science.gov (United States)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  4. Multiferroic oxide thin films and heterostructures

    Science.gov (United States)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  5. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  6. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6-{mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin-film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin-film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin-film lithium batteries.

  7. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; BRUMA M.; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  8. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  9. Incoherent and Laser Photodeposition on Thin Films.

    Science.gov (United States)

    1980-09-01

    mixing system. Both a carbon dioxide and dry chemical fire extinguisher were on hand in case a fire was initiated by the compounds. The dimethvlzinc was...summarizes three months of experimental effort devoted toward the production of thin films by the photodissociation of organometallic molecules containing the...that the threshold wavelength for the photodissociation of both Zn- 0 and Se- (CH3 )2 was approximately 2420A. Consequently, these laser photodeposition

  10. Magnetic properties of electrodeposited Co-W thin films

    Energy Technology Data Exchange (ETDEWEB)

    Admon, U.; Dariel, M.P.; Grunbaum, E.; Lodder, J.C.

    1987-09-01

    Thin films of Co-W, 300--500 A thick, were electrodeposited at various compositions under a wide range of plating conditions. The saturation magnetization, coercivity, and squareness ratio of the films were derived from the parallel (in-plane) and perpendicular hysteresis loops, measured by using a vibrating sample magnetometer. The magnetic properties of the films are strongly related to their microstructure. The nonmagnetic alloying element (W) affects the saturation magnetization via the dilution mechanism. The in-plane coercivity, which increases with increasing content of the hexagonal phase and with decreasing degree of (0001)h texture, is in the range of 100--600 Oe for the crystalline deposits and decreases to a few oersteds for amorphous deposits. The in-plane squareness ratio increases with the fcc or amorphous phase content and with decreasing degree of (0001)h texture. The magnetic measurements suggest that films that appeared amorphous according to their electron diffraction patterns are actually microcrystalline or at least partially crystallized.

  11. Design and characterization of thin film microcoolers

    Science.gov (United States)

    LaBounty, Chris; Shakouri, Ali; Bowers, John E.

    2001-04-01

    Thin film coolers can provide large cooling power densities compared to bulk thermoelectrics due to the close spacing of hot and cold junctions. Important parameters in the design of such coolers are investigated theoretically and experimentally. A three-dimensional (3D) finite element simulator (ANSYS) is used to model self-consistently thermal and electrical properties of a complete device structure. The dominant three-dimensional thermal and electrical spreading resistances acquired from the 3D simulation are also used in a one-dimensional model (MATLAB) to obtain faster, less rigorous results. Heat conduction, Joule heating, thermoelectric and thermionic cooling are included in these models as well as nonideal effects such as contact resistance, finite thermal resistance of the substrate and the heat sink, and heat generation in the wire bonds. Simulations exhibit good agreement with experimental results from InGaAsP-based thin film thermionic emission coolers which have demonstrated maximum cooling of 1.15 °C at room temperature. With the nonideal effects minimized, simulations predict that single stage thin film coolers can provide up to 20-30 °C degrees centigrade cooling with cooling power densities of several 1000 W/cm2.

  12. Grain boundaries in Cu(In,Ga)(Se,S){sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Rau, Uwe [Forschungszentrum Juelich, IEF5-Photovoltaik, Juelich (Germany); Taretto, Kurt [Universidad Nacional del Comahue, Dto. de Electrotecnia, Buenos Aires, Neuquen (Argentina); Siebentritt, Susanne [Universite du Luxembourg, Luxembourg (Luxembourg)

    2009-07-15

    The paper reviews the current status of the research on grain boundaries in polycrystalline Cu(In,Ga)(S,Se){sub 2} alloys used as absorber materials for thin-film solar cells. We discuss the different concepts that are available to explain the relatively low electronic activity of grain boundaries in these materials. Numerical simulations that have been undergone so far to model the polycrystalline solar cells are briefly summarized. In addition, we give an overview on the experiments that have been conducted so far to elucidate the structural, defect-chemical, and electronic properties of grain boundaries in Cu(In,Ga)(S,Se){sub 2} thin-films. (orig.)

  13. Titanium diffusion in gold thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, William E. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States); Gregori, Giuliano, E-mail: g.gregori@fkf.mpg.d [California NanoSystems Institute, University of California, Santa Barbara, CA 93106-5050 (United States); Mates, Thomas [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)

    2010-03-01

    In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 {sup o}C are investigated. The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion. It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 {sup o}C. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy {Delta}E = 0.66 eV and the corresponding pre-exponential factor D{sub 0} = 5 x 10{sup -11} cm{sup 2}/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 < {Delta}E{sub gb} < 0.66 eV and the pre-exponential factor s{sub 0}D{sub gb0} = 1.14 x 10{sup -8} cm{sup 2}/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 {sup o}C.

  14. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  15. Dynamic Characterization of Thin Film Magnetic Materials

    Science.gov (United States)

    Gu, Wei

    A broadband dynamic method for characterizing thin film magnetic material is presented. The method is designed to extract the permeability and linewidth of thin magnetic films from measuring the reflection coefficient (S11) of a house-made and short-circuited strip line testing fixture with or without samples loaded. An adaptive de-embedding method is applied to remove the parasitic noise of the housing. The measurements were carried out with frequency up to 10GHz and biasing magnetic fields up to 600 Gauss. Particular measurement setup and 3-step experimental procedures are described in detail. The complex permeability of a 330nm thick continuous FeGaB, 435nm thick laminated FeGaB film and a 100nm thick NiFe film will be induced dynamically in frequency-biasing magnetic field spectra and compared with a theoretical model based on Landau-Lifshitz-Gilbert (LLG) equations and eddy current theories. The ferromagnetic resonance (FMR) phenomenon can be observed among these three magnetic materials investigated in this thesis.

  16. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  17. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  18. Optical properties of thin polymer films

    Science.gov (United States)

    Kasarova, Stefka N.; Sultanova, Nina G.; Petrova, Tzveta; Dragostinova, Violeta; Nikolov, Ivan

    2009-10-01

    In this report three types of optical polymer thin films deposited on glass substrates are investigated. Transmission spectra of the polymer samples are obtained in the range from 400 nm to 1500 nm. A laser microrefractometer has been used to measure the refractive indices of the examined materials at 406, 656, 910 and 1320 nm. Dispersion properties of the polymer films are analyzed on the base of the Cauchy-Schott's and Sellmeier`s approximations. Dispersion coefficients are calculated and dispersion charts in the visible and near infrared spectral regions are presented and compared. Abbe numbers of mean and partial dispersion of the polymer films are obtained. Calculation of refractive indices at many laser emission wavelengths in the considered spectral range is accomplished.

  19. Inorganic and Organic Solution-Processed Thin Film Devices

    Institute of Scientific and Technical Information of China (English)

    Morteza Eslamian

    2017-01-01

    Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging tech-nologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique prop-erties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

  20. Determination of the area density and composition of alloy film using dual alpha particle energy loss

    Science.gov (United States)

    Ma, Xiaojun; Li, Bo; Gao, Dangzhong; Xu, Jiayun; Tang, Yongjian

    2017-02-01

    A novel method based on dual α-particles energy loss (DAEL) is proposed for measuring the area density and composition of binary alloy films. In order to obtain a dual-energy α-particles source, an ingenious design that utilizes the transmitted α-particles traveling the thin film as a new α-particles source is presented. Using the DAEL technique, the area density and composition of Au/Cu film are determined accurately with an uncertainty of better than 10%. Finally, some measures for improving the combined uncertainty are discussed.

  1. Ultrathin films of polycrystalline MnGa alloy with perpendicular magnetic anisotropy

    Science.gov (United States)

    Ono, Atsuo; Suzuki, Kazuya Z.; Ranjbar, Reza; Sugihara, Atsushi; Mizukami, Shigemi

    2017-02-01

    Room temperature growth of textured polycrystalline films of MnGa alloys using a CoGa buffer layer on a thermally oxidized Si substrate is demonstrated. MnGa thin films with a thickness of 2 nm exhibit out-of-plane rectangular hysteresis loops. A small saturation magnetization of about 200 emu/cm3 and a large perpendicular magnetic anisotropy of up to 3–5 Merg/cm3 were achieved for 2- and 3-nm-thick MnGa ultrathin films; such values have never been reported before, and they provide a pathway for integration with conventional Si technology.

  2. High-frequency magnetic characteristics of Fe-Co-based nanocrystalline alloy films

    Institute of Scientific and Technical Information of China (English)

    HIHARA; Takehiko; SUMIYAMA; Kenji

    2010-01-01

    Magnetically soft Fe-Co-based nanocrystalline alloy films were produced by two preparation methods:One using a new energetic cluster deposition technique and another using a conventional magnetron sputtering technique.Their structural,static magnetic properties and high-frequency magnetic characteristics were investigated.In the energetic cluster deposition method,by applying a high-bias voltage to a substrate,positively charged clusters in a cluster beam were accelerated electrically and deposited onto a negatively biased substrate together with neutral clusters from the same cluster source,to form a high-density Fe-Co alloy cluster-assembled film with good high-frequency magnetic characteristics.In the conventional magnetron sputtering method,only by rotating substrate holder and without applying a static inducing magnetic field on the substrates,we produced Fe-Co-based nanocrystalline alloy films with a remarkable in-plane uniaxial magnetic anisotropy and a good soft magnetic property.The obtained Fe-Co-O,Fe-Co-Ti-N,and Fe-Co-Cr-N films all revealed a high real permeability exceeding 500 at a frequency up to 1.2 GHz.This makes Fe-Co-based nanocrystalline alloy films potential candidates as soft magnetic thin film materials for the high-frequency applications.

  3. A New Method of Fabricating NASICON Thin Film

    Institute of Scientific and Technical Information of China (English)

    WNGLing; SUNJialin; 等

    1998-01-01

    Nasicon thin films of 15 μm thick on YSZ sub-strates were prepared by means of solid state reaction at 1230℃ for 10 hours,Stuctural characteriza-tion of the films were performed by XRD ,SEM and EDX,A new tyype of CO2 gas sensor with Nasicon thin film as solid electrolyte was developed.

  4. Bismuth thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Flores, Teresa; Arronte, Miguel; Rodriguez, Eugenio; Ponce, Luis; Alonso, J. C.; Garcia, C.; Fernandez, M.; Haro, E.

    1999-07-01

    In the present work Bi thin films were obtained by Pulsed Laser Deposition, using Nd:YAG lasers. The films were characterized by optical microscopy. Raman spectroscopy and X-rays diffraction. It was accomplished the real time spectral emission characterization of the plasma generated during the laser evaporation process. Highly oriented thin films were obtained.

  5. MgB{sub 2} thin films by hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xi, X.X. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]. E-mail: xxx4@psu.edu; Pogrebnyakov, A.V. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Xu, S.Y.; Chen, K.; Cui, Y.; Maertz, E.C. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Zhuang, C.G. [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Physics, Peking University, Beijing 100871 (China); Li, Qi [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D.R. [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)]|[Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Liu, Z.K.; Soukiassian, A.; Schlom, D.G.; Weng, X.J.; Dickey, E.C. [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Y.B.; Tian, W.; Pan, X.Q. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Cybart, S.A. [Department of Physics, University of California, Berkeley, CA 94720 (United States); Dynes, R.C. [Department of Physics, University of California, Berkeley, CA 94720 (United States)

    2007-06-01

    Hybrid physical-chemical vapor deposition (HPCVD) has been the most effective technique for depositing MgB{sub 2} thin films. It generates high magnesium vapor pressures and provides a clean environment for the growth of high purity MgB{sub 2} films. The epitaxial pure MgB{sub 2} films grown by HPCVD show higher-than-bulk T {sub c} due to tensile strain in the films. The HPCVD films are the cleanest MgB{sub 2} materials reported, allowing basic research, such as on magnetoresistance, that reveals the two-band nature of MgB{sub 2}. The carbon-alloyed HPCVD films demonstrate record-high H {sub c2} values promising for high magnetic field applications. The HPCVD films and multilayers have enabled the fabrication of high quality MgB{sub 2} Josephson junctions.

  6. Surface and Electrical Properties of NiCr Thin Films Prepared by DC Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHOU Jicheng; TIAN Li; YAN Jianwu

    2008-01-01

    Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer (EDX),Atomic Force Microscope (AFM) and four-point probe (FPP) to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.

  7. Cosolvent approach for solution-processable electronic thin films.

    Science.gov (United States)

    Lin, Zhaoyang; He, Qiyuan; Yin, Anxiang; Xu, Yuxi; Wang, Chen; Ding, Mengning; Cheng, Hung-Chieh; Papandrea, Benjamin; Huang, Yu; Duan, Xiangfeng

    2015-04-28

    Low-temperature solution-processable electronic materials are of considerable interest for large-area, low-cost electronics, thermoelectrics, and photovoltaics. Using a soluble precursor and suitable solvent to formulate a semiconductor ink is essential for large-area fabrication of semiconductor thin films. To date, it has been shown that hydrazine can be used as a versatile solvent to process a wide range of inorganic semiconductors. However, hydrazine is highly toxic and not suitable for large-scale manufacturing. Here we report a binary mixed solvent of amine and thiol for effective dispersion and dissolution of a large number of inorganic semiconductors including Cu2S, Cu2Se, In2S3, In2Se3, CdS, SnSe, and others. The mixed solvent is significantly less toxic and safer than hydrazine, while at the same time offering the comparable capability of formulating diverse semiconductor ink with a concentration as high as >200 mg/mL. We further show that such ink material can be readily processed into high-performance semiconducting thin films (Cu2S and Cu2Se) with the highest room-temperature conductivity among solution-based materials. Furthermore, we show that complex semiconductor alloys with tunable band gaps, such as CuIn(S(x)Se(1-x))2 (0 ≤ x ≤ 1), can also be readily prepared by simply mixing Cu2S, Cu2Se, In2S3, and In2Se3 ink solutions in a proper ratio. Our study outlines a general strategy for the formulation of inorganic semiconductor ink for low-temperature processing of large-area electronic thin films on diverse substrates and can greatly impact diverse areas including flexible electronics, thermoelectrics, and photovoltaics.

  8. Perpendicular magnetic anisotropy in Co{sub 3}Pt thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Christian; Makarov, Denys; Brombacher, Christoph; Neupert, Katja; Kehr, Mirko; Hoyer, Walter; Albrecht, Manfred [Chemnitz University of Technology (Germany). Institute of Physics

    2010-07-01

    Binary alloys of M{sub x}Pt{sub 1-x} (M=Fe and Co) prepared as thin films tend to show a strong perpendicular magnetic anisotropy (PMA), making them good candidates for magnetic recording media or sensoric devices. The magnetic response of M{sub x}Pt{sub 1-x} films can be strongly modified by the degree of composition, film thickness, deposition temperature, and nature of substrate. Thus, chemically disordered CoPt alloys with (111) texture exhibit an unexpected PMA related to an anisotropic short-range order (SRO) effect. Here we present an investigation of structural and magnetic properties of Co{sub 3}Pt alloy films in the thickness range from 5 to 20 nm. The magnetic layers were deposited using magnetron co-sputtering on thermally oxidized Si(100) wafers. Interestingly, even when deposited at room temperature, these films reveal the presence of a strong PMA (K{sub U} = 0.6 MJ/m{sup 3}) with a full remanence in the out-of-plane direction. Furthermore, owing to the high Co content, the alloy has a rather high value of saturation magnetization of about 0.8 T. To access the structural properties of the alloy, a X-ray diffraction study was carried out. However, no superstructure peaks which might be attributed to a chemical long range order have been observed indicating that SRO is the origin for the PMA.

  9. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  10. Soldering of Thin Film-Metallized Glass Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Hernandez, C.L.; Glass, S.J.

    1999-03-31

    The ability to produce reliable electrical and structural interconnections between glass and metals by soldering was investigated. Soldering generally requires premetallization of the glass. As a solderable surface finish over soda-lime-silicate glass, two thin films coatings, Cr-Pd-Au and NiCr-Sn, were evaluated. Solder nettability and joint strengths were determined. Test samples were processed with Sn60-Pb40 solder alloy at a reflow temperature of 210 C. Glass-to-cold rolled steel single lap samples yielded an average shear strength of 12 MPa. Solder fill was good. Control of the Au thickness was critical in minimizing the formation of AuSn{sub 4} intermetallic in the joint, with a resulting joint shear strength of 15 MPa. Similar glass-to-glass specimens with the Cr-Pd-Au finish failed at 16.5 MPa. The NiCr-Sn thin film gave even higher shear strengths of 20-22.5 MPa, with failures primarily in the glass.

  11. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  12. Thin film pyrolysis of oil sands asphaltenes for structural analysis

    Energy Technology Data Exchange (ETDEWEB)

    Karimi, Arash; Gray, Murray R [Department of Chemical and Materials Engineering, University of Alberta (Canada); Qian, Kuangnan; Olmstead, William N.; Freund, Howard [ExxonMobil Research and Engineering (United States)], email: murray.gray@ualberta.ca

    2010-07-01

    Current methods to extract asphaltene building blocks only produce small sample quantities per batch for analysis. To reach sample quantities sufficient for several analytical methods on each batch, the following method was investigated in a preliminary study. Asphaltenes from Alberta bitumen were spray coated as thin films on alloy plates to be used in controlled pyrolysis. Each batch of six plates reacted around 1 g of asphaltenes in the furnace. Reaction products were purged from the reaction chamber with cold nitrogen, then cooled in a cold trap. Gases were collected and analysed using gas chromatography. Liquid products were condensed in a cold trap, rinsed with solvent, and evaporated overnight. The coke was also recovered from the plates and analysed. The method yielded mass balances greater than 90%. Products analysis revealed molecular fragment sizes ranging from C10 to C100. Lighter components (C5-C10) were not detected, having probably evaporated during solvent removal.

  13. Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

    Science.gov (United States)

    Velten, D; Eisenbarth, E; Schanne, N; Breme, J

    2004-04-01

    Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

  14. Growth and surface characterization of TiNbZr thin films deposited by magnetron sputtering for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Tallarico, D.A. [Federal University of Sao Carlos, Materials Science and Engineering Graduation Program, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil); Gobbi, A.L. [Brazilian Nanotechnology National Laboratory, Rua Giuseppe Máximo Scolfaro 10.000, CEP 13083-100 Campinas, SP (Brazil); Paulin Filho, P.I. [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil); Maia da Costa, M.E.H. [Pontifical Catholic University of Rio de Janeiro, Department of Physics, CEP 22451-900 Rio de Janeiro, RJ (Brazil); Nascente, P.A.P., E-mail: nascente@ufscar.br [Federal University of Sao Carlos, Department of Materials Engineering, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, SP (Brazil)

    2014-10-01

    Low modulus of elasticity and the presence of non-toxic elements are important criteria for the development of materials for implant applications. Low modulus Ti alloys can be developed by designing β-Ti alloys containing non-toxic alloying elements such as Nb and Zr. Actually, most of the metallic implants are produced with stainless steel (SS) because it has adequate bulk properties to be used as biomaterials for orthopedic or dental implants and is less expensive than Ti and its alloys, but it is less biocompatible than them. The coating of this SS implants with Ti alloy thin films may be one alternative to improve the biomaterial properties at a relatively low cost. Sputtering is a physical deposition technique that allows the formation of nanostructured thin films. Nanostructured surfaces are interesting when it comes to the bone/implant interface due to the fact that both the surface and the bone have nanoscale particle sizes and similar mechanical properties. TiNbZr thin films were deposited on both Si(111) and stainless steel (SS) substrates. The TiNbZr/Si(111) film was used as a model system, while the TiNbZr/SS film might improve the biocompatibility and extend the life time of stainless steel implants. The morphology, chemical composition, Young's modulus, and hardness of the films were analyzed by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), and nanoindentation. - Highlights: • TiNbZr thin films were deposited on Si(111) and stainless steel (SS). • Their Young's modulus differences are within 5.3% and hardness 1.7%. • TiNbZr/SS film chemical composition remained almost constant with depth. • TiNbZr films presented nanostructured grains and low roughness for substrates. • TiNbZr/SS film hardness was about 100% greater than the SS substrate hardness.

  15. Intrinsic instability of thin liquid films on nanostructured surfaces

    Science.gov (United States)

    Rokoni, Arif; Hu, Han; Sun, Liyong; Sun, Ying

    2016-11-01

    The instability of a thin liquid film on nanostructures is not well understood but is important in liquid-vapor two-phase heat transfer (e.g., thin film evaporation and boiling), lubrication, and nanomanufacturing. In thin film evaporation, the comparison between the non-evaporating film thickness and the critical film breakup thickness determines the stability of the film: the film becomes unstable when the critical film breakup thickness is larger than the non-evaporating film thickness. In this study, a closed-form model is developed to predict the critical breakup thickness of a thin liquid film on 2D periodic nanostructures based on minimization of system free energy in the limit of a liquid monolayer. Molecular dynamics simulations are performed for water thin films on square nanostructures of varying depth and wettability and the simulations agree with the model predictions. The results show that the critical film breakup thickness increases with the nanostructure depth and the surface wettability. The model developed here enables the prediction of the minimum film thickness for stable thin film evaporation on a given nanostructure.

  16. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei

    2013-01-01

    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  17. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses plating free-standing ultrathin silicon nitride membranes, and we successfully plated the interior walls of micropore arrays in 200 nm thick silicon nitride membranes. The method is thus amenable to coating planar, curved, and line-of-sight-obscured silicon nitride surfaces.

  18. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  19. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN

    2009-01-01

    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  20. Electrochemical preparation and abnormal infrared effects of nanostructured Ni thin film

    Institute of Scientific and Technical Information of China (English)

    WANG Hanchun; ZHOU Zhiyou; TANG Wei; YAN Jiawei; SUN Shigang

    2004-01-01

    Nanometer-scale thin film of Ni supported on glassy carbon (nm-Ni/GC) was prepared by electrochemical deposition through cyclic voltammetry (CV). The properties of nm-Ni/GC were studied by electrochemical in situ FTIR reflection spectroscopy using CO adsorption as probe reaction. It has revealed that the nm-Ni/GC exhibits abnormal infrared effects (AIREs). The study has extended the investigation of the AIREs that we have discovered initially on nanostruetured film materials of platinum group metals and alloys to nanostructured film materials of iron group metals.

  1. Thermal Oxidation Preparation of Doped Hematite Thin Films for Photoelectrochemical Water Splitting

    Directory of Open Access Journals (Sweden)

    Song Li

    2014-01-01

    Full Text Available Sn- or Ge-doped hematite thin films were fabricated by annealing alloyed films for the purpose of photoelectrochemical (PEC water splitting. The alloyed films were deposited on FTO glass by magnetron sputtering and their compositions were controlled by the target. The morphology, crystalline structure, optical properties, and photocatalytic activities have been investigated. The SEM observation showed that uniform, large area arrays of nanoflakes formed after thermal oxidation. The incorporation of doping elements into the hematite structure was confirmed by XRD. The photocurrent density-voltage characterization illustrated that the nanoflake films of Sn-doped hematite exhibited high PEC performance and the Sn concentration was optimized about 5%. The doped Ge4+ ions were proposed to occupy the empty octahedral holes and their effect on PEC performance of hematite is smaller than that of tin ions.

  2. L10 ordered phase formation in FePt, FePd, CoPt, and CoPd alloy thin films epitaxially grown on MgO(001) single-crystal substrates

    Science.gov (United States)

    Ohtake, Mitsuru; Ouchi, Shouhei; Kirino, Fumiyoshi; Futamoto, Masaaki

    2012-04-01

    The FePt, FePd, CoPt, and CoPd epitaxial thin films are prepared on MgO(001) single-crystal substrates by ultrahigh vacuum RF magnetron sputtering. The effects of the magnetic material and the substrate temperature on the film growth, the film structure, and the magnetic properties are investigated. The L10 ordered phase formation is observed for FePt, FePd, and CoPt films prepared at temperatures higher than 200, 400, and 600 °C, respectively, whereas that is not recognized for CoPd films. The L10-FePd(001) single-crystal films with the c-axis normal to the substrate surface are formed, whereas the FePt and CoPt epitaxial films include L10(100) crystals whose c-axis is parallel to the substrate surface, in addition to the L10(001) crystals. Upon increasing the substrate temperature, the ordering degree increases. A higher ordering parameter is observed in the order of FePd > FePt > CoPt. The magnetic properties are influenced by the crystal structure, the crystallographic orientation of the L10 crystal, and the ordering degree.

  3. Stripe glasses in ferromagnetic thin films

    Science.gov (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.

    2016-02-01

    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  4. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures.

    Science.gov (United States)

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  5. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  6. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  7. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  8. 3D Field Simulation of Magnetic Thin Film Inductor

    OpenAIRE

    FUJIWARA, Toshiyasu; CHOI, Kyung-Ku; SATO, SHIGEKI

    2006-01-01

    The 3D magnetic field simulations with FEM (finite element method) have been performed to predictand understand the performance of Magnetic Thin Film Inductor (MTFl). Inductor structures of planar electroplated Cu spiralcoil, which are sandwiched and underlaid with magnetic thin films, are considered as the simulation models. The inductance increment of 300% compared to air-core inductor was predicted when the sandwiched 5μm thickness magnetic thin film with relative permeability of 600 was a...

  9. Crystal structure of fiber structured pentacene thin films

    OpenAIRE

    2007-01-01

    This PhD thesis presents a technique based on the grazing incidence crystal truncation rod (GI-CTR) X-ray diffraction method used to solve the crystal structure of substrate induced fiber structured organic thin films. The crystal structures of pentacene thin films grown on technologically relevant gate dielectric substrates are reported. It is widely recognized, that the intrinsic charge transport properties in organic thin film transistors (OTFTs) depend strongly on the crystal structur...

  10. Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels

    Directory of Open Access Journals (Sweden)

    Subramanian B

    2015-10-01

    Full Text Available Balasubramanian Subramanian,1 Sundaram Maruthamuthu,2 Senthilperumal Thanka Rajan1 1Electrochemical Material Science Division, 2Corrosion and Materials Protection Division, Central Electrochemical Research Institute, Karaikudi, India Abstract: Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.% of approximately 1.5 µm and 3 µm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature. Keywords: thin film metallic glasses, sputtering, biocompatibility, corrosion, antimicrobial activity

  11. Optical band gap tuning of Sb-Se thin films for xerographic based applications

    Science.gov (United States)

    Kaur, Ramandeep; Singh, Palwinder; Singh, Kulwinder; Kumar, Akshay; Thakur, Anup

    2016-10-01

    In the present paper we have studied the effect of Sb addition on the optical band gap tuning of thermally evaporated SbxSe100-x (x = 0, 5, 20, 50 and 60) thin films. The structural investigations revealed that all thin films were amorphous in nature. Transmission spectrum was taken in the range 400-2500 nm shows that all films are highly transparent in the near infrared region. The fundamental absorption edge shifts towards longer wavelength with Sb incorporation. The optical band gap decreases with addition of antimony in a-Se thin films. A good correlation has been drawn between experimentally estimated and theoretically calculated optical band gap. The decrease in optical band gap of thin films has been explained using chemical bond approach and density of states model. Decrease in optical band gap with Sb addition increases the concentration of electron deep traps which increases the X-ray sensitivity of Sb-Se thin films. Thus by tuning the optical band gap of Sb-Se alloy, it could be utilized for xerographic based applications.

  12. Electrodeposited Fe{sub (100-x)}Ga{sub x} thin films with high magnetostriction

    Energy Technology Data Exchange (ETDEWEB)

    Iselt, Diana; Schultz, Ludwig [IFW Dresden, Institute for Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany); TU Dresden, Faculty of Mechanical Engineering, 01062 Dresden (Germany); Schloerb, Heike; Faehler, Sebastian [IFW Dresden, Institute for Metallic Materials, Helmholtzstr. 20, 01069 Dresden (Germany)

    2010-07-01

    Magnetostrictive materials can be used to build up electromagnetic sensing and actuating devices. A promising candidate to overcome the mechanical limitations of Terfenol-D is Fe{sub (100-x)}Ga{sub x} with 15 to 25 at.% Ga, which shows a high mechanical strength and low saturation fields. For the application as sensors thin films, ribbons and nanowires need to be produced in a cheap way over large areas. In this study a suitable deposition process for Fe-Ga alloy thin films has been developed using electrochemical pulse plating. By optimising the deposition parameters such as electrolyte composition, deposition potential, deposition time and pulse sequences, homogeneous (110)-oriented thin films with low oxygen content have been prepared. Preliminary investigations of magnetic properties correlated to magnetostriction are presented and discussed in sense of shape anisotropy.

  13. Current-induced surface roughness reduction in conducting thin films

    Science.gov (United States)

    Du, Lin; Maroudas, Dimitrios

    2017-03-01

    Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film's wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. The modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

  14. Platinum-Iridium Alloy Films Prepared by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Yan; CHEN Li; CAI Hongzhong; ZHENG Xu; YANG Xiya; HU Changyi

    2012-01-01

    Platinum-Iridium alloy films were prepared by MOCVD on Mo substrate using metal-acetylacetonate precursors.Effects of deposition conditions on composition,microstructure and mechanical properties were determined.In these experimental conditions,the purities of films are high and more than 99.0%.The films are homogeneous and monophase solid solution of Pt and Ir.Weight percentage of platinum are much higher than iridium in the alloy.Lattice constant of the alloy changes with the platinum composition.Iridium composition showing an up-down-up trend at the precursor temperature of 190~230℃ and the deposition temperature at 400~550℃.The hardness of Pt-Ir alloys prepared by MOCVD is three times more than the alloys prepared by casting.

  15. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  16. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  17. Non-local thin films in Casimir force calculations

    CERN Document Server

    Esquivel, R

    2005-01-01

    he Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than the mean free path for electrons, the difference between local and nonlocal calculations of the Casimir force is of the order of a few tenths of a percent. Thus the local description of thin metallic films is adequate within the current experimental precision and range of separations.

  18. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  19. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  20. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  1. Thin-Film Materials Synthesis and Processing Facility

    Data.gov (United States)

    Federal Laboratory Consortium — FUNCTION: Provides a wide capability for deposition and processing of thin films, including sputter and ion-beam deposition, thermal evaporation, electro-deposition,...

  2. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  3. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters

    OpenAIRE

    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.

    1988-01-01

    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  4. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  5. Electron impinging on metallic thin film targets

    Energy Technology Data Exchange (ETDEWEB)

    Rouabah, Z. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France); Laboratoire Materiaux et Systemes Electroniques, Centre Universitaire de Bordj-Bou-Arreridj, El-Anasser, 34265 Bordj-Bou-Arreridj (Algeria); Bouarissa, N., E-mail: N_Bouarissa@yahoo.fr [Department of Physics, Faculty of Science, King Khalid University, Abha, P.O.Box 9004 (Saudi Arabia); Champion, C. [Laboratoire de Physique Moleculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Universite Paul Verlaine-Metz, Metz Cedex 3 (France)

    2010-03-15

    Based on the Vicanek and Urbassek theory [M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski [A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given [Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed.

  6. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang

    2005-01-01

    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  7. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)

    R.Billet

    2004-01-01

    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  8. Birefringent thin films and polarizing elements

    CERN Document Server

    Hodgkinson, Ian J

    1997-01-01

    This book describes the propagation of light in biaxial media, the properties of biaxial thin films, and applications such as birefringent filters for tuning the wavelength of dye lasers.A novel feature of the first part is the parallel treatment of Stokes, Jones, and Berreman matrix formalisms in a chapter-by-chapter development of wave equations, basis vectors, transfer matrices, reflection and transmission equations, and guided waves. Computational tools for MATLAB are included.The second part focuses on an emerging planar technology in which anisotropic microstructures are formed by obliqu

  9. Synthesis and Characterization of Thin Films.

    Science.gov (United States)

    1987-07-10

    j,k tinteger; freq comp % array CO..203 of integer; A, phase ~carg : array CC. .2CJ of realI begin woriteln(’enter numfourierpts’);N readln(num fourier...Thesis DTIG SELECTfE: rmas do~amaat hau s appvildlttb tol a.l e... . . .o fix paut reloc~e and 9010) Is . < " ,,.’. 5’ , , "" "’’"°"" % Is ViifmyI lr...URIP) grants. 2. THIN FILM FACILITY A 1983 DoD University Research Instrumentation Program Grant to ISU was used for construction of the first phase

  10. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  11. Robust, Thin Optical Films for Extreme Environments

    Science.gov (United States)

    2006-01-01

    The environment of space presents scientists and engineers with the challenges of a harsh, unforgiving laboratory in which to conduct their scientific research. Solar astronomy and X-ray astronomy are two of the more challenging areas into which NASA scientists delve, as the optics for this high-tech work must be extremely sensitive and accurate, yet also be able to withstand the battering dished out by radiation, extreme temperature swings, and flying debris. Recent NASA work on this rugged equipment has led to the development of a strong, thin film for both space and laboratory use.

  12. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  13. Vortex motion in YBCO thin films

    Science.gov (United States)

    Shapiro, V.; Verdyan, A.; Lapsker, I.; Azoulay, J.

    1999-09-01

    Hall resistivity measurements as function of temperature in the vicinity of Tc were carried out on a thin films YBCO superconductors. A sign reversal of Hall voltage with external magnetic field applied along c axis have been observed upon crossing Tc. Hall voltage in the mixed state was found to be insensitive to the external magnetic field inversion. These effects are discussed and explained in terms of vortex motion under the influence of Magnus force balanced by large damping force. It is argued that in this model the flux-line velocity has component opposite to the superfluid current direction thus yielding a negative Hall voltage.

  14. Nanoparticulate CoPt Thin Films

    Science.gov (United States)

    Barekatain, Yasaman; Hadjipanayis, George; Magnetics bLab Team

    Equiatomic FePt and CoPt alloys are very attractive for application in high density recording media because of the high magnetocrystalline anisotropy K of their fct(L10) structure with values exceeding 2MJ/m3.The aim of this study is to fabricate a nanoparticulate CoPt film consisting of CoPt nanoparticles embedded in a matrix. To obtain this we have used co-sputtering of CoPt with different materials M = BN,C, Cu and SiO2. Our first experiments were done on CoPt films with thickness of 200 nm. The as-sputtered films had the fcc structure and a coercivity of 150 Oe. Annealing at 700 oC for 30 min led to an increase in coercivity to 4 kOe. Optimization studies are under way to find the optimum sputtering conditions to obtain a fully ordered tetragonal structure with the highest value of coercivity which can then be used in the nanoparticulate composites. Work supported by DOE BES- FG02-04ERU4612 DOE DE-FG02-04ERU4612.

  15. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  16. Phase transitions in pure and dilute thin ferromagnetic films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  17. Capillary instabilities in thin films. II. Kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.

  18. Magnetic, magnetooptical, and magnetotransport properties of Ti-substituted Co2FeGa thin films

    Science.gov (United States)

    Khovaylo, Vladimir; Rodionova, Valeria; Lyange, Maria; Chichay, Ksenia; Gan'shina, Elena; Novikov, Andrey; Zykov, Georgy; Bozhko, Alexei; Ohtsuka, Makoto; Umetsu, Rie Y.; Okubo, Akinari; Kainuma, Ryosuke

    2014-08-01

    Magnetic, magnetooptical and magnetotransport properties of Co50.3Fe20.3Ti5.6Ga23.8 thin films were studied for the as prepared as well as annealed samples. Measurements of transverse magnetooptical Kerr effect revealed that the spectral response of the films strongly depends on the structural ordering which can be manipulated by annealing conditions. Peculiarities in the magnetic properties of the films were attributed to the coexisting phases with different degree of structural disorder. Magnetoresistance of Co50.3Fe20.3Ti5.6Ga23.8 thin films was found to be linear in the fields above 1 T which is typical for half-Heusler systems as well as for Heusler-based ferromagnetic shape memory alloys.

  19. Morphology, structure, and magnetism of FeCo thin films electrodeposited on hydrogen-terminated Si(111) surfaces.

    Science.gov (United States)

    Zarpellon, J; Jurca, H F; Mattoso, N; Klein, J J; Schreiner, W H; Ardisson, J D; Macedo, W A A; Mosca, D H

    2007-12-15

    In this work we describe the fabrication of FeCo alloy (less than 10 at% Co) thin films from aqueous ammonium sulfate solutions onto n-type Si(111) substrates using potentiostatic electrodeposition at room temperature. The incorporation of Co into the deposits tends to inhibit Fe silicide formation and to protect deposits against oxidation under air exposure. As the incorporation of Co was progressively increased, the sizes of nuclei consisting of FeCo alloy increased, leading to films with a highly oriented body-centered cubic structure with crystalline texture, where (110) planes remain preferentially oriented parallel to the film surface.

  20. Calculation of Specific Heat for Aluminium Thin Films

    Institute of Scientific and Technical Information of China (English)

    LU Yao; SONG Qing-Lin; XIA Shan-Hong

    2005-01-01

    @@ We employ Prasher's non-dimensional form to analyse the size effects on specific heat of Al thin films. Compared the calculation results of pure aluminium film with the experimental data, it is found that the reduction of phonon states is not the main reason of the size effect on the specific heat Al thin films with thickness from 10hm to 370nm. However, the Al thin film in air usually has an oxidation layer and the specific heat of the layer is smaller than Al. By including the contribution of the oxidation layer to the thin-film specific heat, the calculation results are much closer to the experimental data. This may be a possible reason of the size effects on specific heat of Al thin films.

  1. Room temperature ferromagnetism down to 10 nanometer Ni–Fe–Mo alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Mitali, E-mail: akm@bose.res.in [Department of Materials Science, S.N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata 700098 (India); Majumdar, A.K. [Department of Materials Science, S.N. Bose National Centre for Basic Sciences, JD Block, Sector III, Salt Lake City, Kolkata 700098 (India); Ramakrishna Mission Vivekananda University, PO Belur Math, Howrah 711202 (India); Rai, S.; Tiwari, Pragya; Lodha, G.S. [Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Banerjee, A. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India); Nair, K.G.M [Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu 603102 (India); Sarkar, Jayanta [Low Temperature Laboratory, Aalto University, P.O. Box 15100, FI-00076 AALTO (Finland); Choudhary, R.J.; Phase, D.M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India)

    2013-10-31

    Magnetic behavior of a few pulsed laser deposited soft ferromagnetic thin films of Ni–Fe–Mo alloys of different thickness on sapphire single crystals is interpreted on the basis of their structural characteristics. Highly textured thin films have high void density due to island-like growth. X-ray reflectivity (XRR) of the thin films indicate that instead of a uniform density there are effectively three layers with density gradient across the thickness, which is further supported by atomic force microscopy and cross-sectional scanning electron microscopy. Rutherford backscattering spectroscopy and energy dispersive spectrum measurements reveal that the composition in the films is not too far from that of the bulk target with a trend of enhanced Fe yield in the films. The structural disorder strongly affected the magnetic property of the films resulting in much higher values of the Curie temperature T{sub C} and coercive field H{sub C} than those of the bulk targets. Bifurcations of low-field zero-field-cooled and field-cooled magnetization reflect the disorder-induced anisotropy in the thin films. The spin wave stiffness constants D are higher than their bulk counterparts which are supportive of the enhanced Fe yield in the films. The saturation magnetization, M calculated from measurements in field transverse to the films strongly supports the thickness found from XRR. Finally, even the 10 nm thin films have sizable M and H{sub C} and T{sub C} > 300 K, making them good candidates for magnetic applications. Overall, the magnetic behavior and the structural characteristics have reasonably complemented each other. - Highlights: • Correlated structural and magnetic properties of pulsed laser grown Ni–Fe–Mo filmsFilm thickness from scanning microscopy agrees with X-ray reflectivity analysis. • Experiments reveal that targets and the films have somewhat similar compositions. • Low-field M(T) shows spin-glass-like features in all films in contrast to

  2. Sputter-deposited TiNiPd alloy films on Si wafer

    Institute of Scientific and Technical Information of China (English)

    QIAN Shi-qiang; WU Jian-sheng

    2005-01-01

    Amorphous thin films of Ti51.78 Ni22.24 Pd25.98 alloys were deposited onto n-type(100) Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1 ℃. The film heated at 750 ℃ for 1 h quite crystallizes along with some precipitation, but at 550 ℃ it partially crystallizes. With heating for 50 h at 450 ℃ before crystallization, the film will contain more B19' phases after succeeding heat-treatment at 650 ℃, but less B19' phases after 750 ℃ treatment are found. The fracture morphology of the film heated at 550 ℃ shows a flat pattern with more steps, whereas that of the film preparing at 750 ℃ displays a well-defined fine granulation structure. 550 ℃-heated film is harder than asdeposited film because of good cohesion between film and Si wafer.

  3. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  4. Rechargeable thin-film lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Bates, J.B.; Gruzalski, G.R.; Dudney, N.J.; Luck, C.F.; Yu, X.

    1993-09-01

    Rechargeable thin-film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have been fabricated and characterized. These include Li-TiS{sub 2}, Li-V{sub 2}O{sub 5}, and Li-Li{sub x}Mn{sub 2}O{sub 4} cells with open circuit voltages at full charge of about 2.5 V, 3.7 V, and 4.2 V, respectively. The realization of these robust cells, which can be cycled thousands of times, was possible because of the stability of the amorphous lithium electrolyte, lithium phosphorus oxynitride. This material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46}and a conductivity at 25 C of 2 {mu}S/cm. The thin-film cells have been cycled at 100% depth of discharge using current densities of 5 to 100 {mu}A/cm{sup 2}. Over most of the charge-discharge range, the internal resistance appears to be dominated by the cathode, and the major source of the resistance is the diffusion of Li{sup +} ions from the electrolyte into the cathode. Chemical diffusion coefficients were determined from ac impedance measurements.

  5. Pulsed laser deposition of AlMgB14 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Britson, Jason Curtis [Iowa State Univ., Ames, IA (United States)

    2008-11-18

    Hard, wear-resistant coatings of thin film borides based on AlMgB14 have the potential to be applied industrially to improve the tool life of cutting tools and pump vanes and may account for several million dollars in savings as a result of reduced wear on these parts. Past work with this material has shown that it can have a hardness of up to 45GPa and be fabricated into thin films with a similar hardness using pulsed laser deposition. These films have already been shown to be promising for industrial applications. Cutting tools coated with AlMgB14 used to mill titanium alloys have been shown to substantially reduce the wear on the cutting tool and extend its cutting life. However, little research into the thin film fabrication process using pulsed laser deposition to make AlMgB14 has been conducted. In this work, research was conducted into methods to optimize the deposition parameters for the AlMgB14 films. Processing methods to eliminate large particles on the surface of the AlMgB14 films, produce films that were at least 1m thick, reduce the surface roughness of the films, and improve the adhesion of the thin films were investigated. Use of a femtosecond laser source rather than a nanosecond laser source was found to be effective in eliminating large particles considered detrimental to wear reduction properties from the films. Films produced with the femtosecond laser were also found to be deposited at a rate 100 times faster than those produced with the nanosecond laser. However, films produced with the femtosecond laser developed a relatively high RMS surface roughness around 55nm. Attempts to decrease the surface roughness were largely unsuccessful. Neither increasing the surface temperature of the substrate during deposition nor using a double pulse to ablate the material was found to be extremely successful to reduce the surface roughness. Finally, the adhesion of the thin films to M2 tool steel

  6. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  7. Diamond-like Carbon Thin Films Deposited on Ti6Al4V Alloy Surface by Plasma Gun at Atmospheric Pressure%钛合金表面大气压等离子体枪制备类金刚石薄膜

    Institute of Scientific and Technical Information of China (English)

    陈飞; 周海; 张跃飞; 吕反修

    2012-01-01

    在大气下,采用大气压介质阻挡放电(DBD)等离子体枪在低温下<350℃),以甲烷为单体,氩气为工作气体,在Ti6Al4V钛合金表面制备一层类金刚石薄膜(DLC),以期改善钛合金表面摩擦学性能.利用激光拉曼(Raman)光谱和X射线光电子能谱(XPS)分析了所制备DLC薄膜的结构;利用扫描电子显微镜(SEM)观察DLC薄膜的表面形貌;利用划痕仪测量了DLC薄膜与基体的结合力;利用球-盘摩擦磨损实验仪对DLC薄膜的耐磨性能进行了研究.结果表明:在本实验工艺条件下沉积的类金刚石薄膜厚度约为1.0 μm,薄膜均匀且致密,表面粗糙度Ra为13.23 nm.类金刚石薄膜与基体结合力的临界载荷达到31.0N.DLC薄膜具有优良的减摩性,Ti6Al4V表面沉积DLC薄膜后摩擦系数为0.15,较Ti6Al4V基体的摩擦系数0.50明显减小,耐磨性能得到提高.%At atmospheric pressure, diamond-like carbon (DLC) thin films were deposited on the T16A14V alloy surface by a DBD plasma gun at low temperature (<350℃), with CH4 as a precursor and Ar as dilution gas. The structure of the DLC thin film was analyzed by Laser Raman spectroscope and X-ray photoelectron spectroscopy. The surface morphology was observed through scanning electron microscopy. The adhesion between the DLC thin film and the substrate was investigated with the scribe testing. The friction and wear behavior of the DLC thin films under dry sliding against GCrlS steel was evaluated on a ball-on-disc test rig. The results show that it is feasible to prepare a DLC thin film of 1.0 um thickness by a plasma gun. The film is uniform and dense and the surface roughness R. Is about 13.23 nm. The critical load of adhesion force between the DLC thin film and the substrate is 31.0 N. It has been found that the DLC thin film has excellent friction- and wear-resistant behavior. The friction coefficient of the Ti6A14V substrate is about 0.50 under dry sliding against steel, while the DLC thin

  8. FORMABILITY OF THIN SHEETS FROM ALUMINUM ALLOYS

    Directory of Open Access Journals (Sweden)

    Emil Spišák

    2016-12-01

    Full Text Available In this contribution there have been evaluated properties of four types of sheets made from aluminium alloys. In the case of each of the examined sheets there has been checked its shearing ability via the influence of punch-die clearance change on the quality of blanking edge. Quality of blanking edge is characterized by a ratio of plastic zone height to the total thickness of the sheared material. Formability during the drawing process was measured with earring test. Results are presented by the earring coefficient (unequal height of the cups.

  9. Gating System Design for Casting thin Aluminium Alloy (Al-Si) Plates

    OpenAIRE

    Victor ANJO; Reyaz KHAN

    2013-01-01

    The main problems caused by improper gating are entrained aluminium oxide films, cuts and washes, low casting yield and entrapped gas. This study describes the design of a gating system to produce thin Aluminium cast alloy plates of different sizes and thicknesses of 4mm, 6mm, 8mm, and 10mm using the non-pressurized gating with ratio of 1:4:4 and green sand moulding technique. The gating design was based on the laws of fluid mechanics and empirical rules of gating for non ferrous metals. The ...

  10. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  11. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  12. High temperature superconducting thin films for microwave filters

    Institute of Scientific and Technical Information of China (English)

    ZHAO; Xinjie(赵新杰); LI; Lin(李林); LEI; Chong(雷冲); TIAN; Ybngjun(田永军)

    2002-01-01

    YBa2Cu3O7-δ and Tl2Ba2CaCu2O8 thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.

  13. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  14. Thermochemical Analysis of Molybdenum Thin Films on Porous Alumina.

    Science.gov (United States)

    Lee, Kyoungjin; de Lannoy, Charles-François; Liguori, Simona; Wilcox, Jennifer

    2017-01-12

    Molybdenum (Mo) thin films (thickness thin-film composites were stable below 300 °C but had no reactivity toward gases. Mo thin films showed nitrogen incorporation on the surface as well as in the subsurface at 450 °C, as confirmed by X-ray photoelectron spectroscopy. The reactivity toward nitrogen was diminished in the presence of CO2, although no carbon species were detected either on the surface or in the subsurface. The Mo thin films have a very stable native oxide layer, which may further oxidize to higher oxidation states above 500 °C due to the reaction with the porous anodized alumina substrate. The oxidation of Mo thin films was accelerated in the presence of oxidizing gases. At 600 °C in N2, the Mo thin film on anodized alumina was completely oxidized and may also have been volatilized. The results imply that choosing thermally stable and inactive porous supports and operating in nonoxidizing conditions below 500 °C will likely maintain the stability of the Mo composite. This study provides key information about the chemical and structural stability of a Mo thin film on a porous substrate for future membrane applications and offers further insights into the integrity of thin-film composites when exposed to harsh conditions.

  15. Tools to Synthesize the Learning of Thin Films

    Science.gov (United States)

    Rojas, Roberto; Fuster, Gonzalo; Slusarenko, Viktor

    2011-01-01

    After a review of textbooks written for undergraduate courses in physics, we have found that discussions on thin films are mostly incomplete. They consider the reflected and not the transmitted light for two instead of the four types of thin films. In this work, we complement the discussion in elementary textbooks, by analysing the phase…

  16. Stretchable, adhesive and ultra-conformable elastomer thin films.

    Science.gov (United States)

    Sato, Nobutaka; Murata, Atsushi; Fujie, Toshinori; Takeoka, Shinji

    2016-11-16

    Thermoplastic elastomers are attractive materials because of the drastic changes in their physical properties above and below the glass transition temperature (Tg). In this paper, we report that free-standing polystyrene (PS, Tg: 100 °C) and polystyrene-polybutadiene-polystyrene triblock copolymer (SBS, Tg: -70 °C) thin films with a thickness of hundreds of nanometers were prepared by a gravure coating method. Among the mechanical properties of these thin films determined by bulge testing and tensile testing, the SBS thin films exhibited a much lower elastic modulus (ca. 0.045 GPa, 212 nm thickness) in comparison with the PS thin films (ca. 1.19 GPa, 217 nm thickness). The lower elastic modulus and lower thickness of the SBS thin films resulted in higher conformability and thus higher strength of adhesion to an uneven surface such as an artificial skin model with roughness (Ra = 10.6 μm), even though they both have similar surface energies. By analyzing the mechanical properties of the SBS thin films, the elastic modulus and thickness of the thin films were strongly correlated with their conformability to a rough surface, which thus led to a high adhesive strength. Therefore, the SBS thin films will be useful as coating layers for a variety of materials.

  17. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  18. Vertically aligned biaxially textured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  19. Oxynitride Thin Film Barriers for PV Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Glick, S. H.; delCueto, J. A.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2005-11-01

    Dielectric thin-film barrier and adhesion-promoting layers consisting of silicon oxynitride materials (SiOxNy, with various stoichiometry) were investigated. For process development, films were applied to glass (TCO, conductive SnO2:F; or soda-lime), polymer (PET, polyethylene terephthalate), aluminized soda-lime glass, or PV cell (a-Si, CIGS) substrates. Design strategy employed de-minimus hazard criteria to facilitate industrial adoption and reduce implementation costs for PV manufacturers or suppliers. A restricted process window was explored using dilute compressed gases (3% silane, 14% nitrous oxide, 23% oxygen) in nitrogen (or former mixtures, and 11.45% oxygen mix in helium and/or 99.999% helium dilution) with a worst-case flammable and non-corrosive hazard classification. Method employed low radio frequency (RF) power, less than or equal to 3 milliwatts per cm2, and low substrate temperatures, less than or equal to 100 deg C, over deposition areas less than or equal to 1000 cm2. Select material properties for barrier film thickness (profilometer), composition (XPS/FTIR), optical (refractive index, %T and %R), mechanical peel strength and WVTR barrier performance are presented.

  20. Amorphous molybdenum silicon superconducting thin films

    Directory of Open Access Journals (Sweden)

    D. Bosworth

    2015-08-01

    Full Text Available Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (MoxSi1−x offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz, there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  1. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  2. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  3. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  4. Thin films and coatings toughening and toughness characterization

    CERN Document Server

    Zhang, Sam

    2015-01-01

    Thin Films and Coatings: Toughening and Toughness Characterization captures the latest developments in the toughening of hard coatings and in the measurement of the toughness of thin films and coatings. Featuring chapters contributed by experts from Australia, China, Czech Republic, Poland, Singapore, Spain, and the United Kingdom, this first-of-its-kind book:Presents the current status of hard-yet-tough ceramic coatingsReviews various toughness evaluation methods for films and hard coatingsExplores the toughness and toughening mechanisms of porous thin films and laser-treated surfacesExamines

  5. Peculiarities of spin reorientation in a thin YIG film.

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya. B.; Tsymbal, L. T.; Linnik, A. I.; Dan' shin, N. K.; Izotov, A. I.; Wigen, P. E.

    2002-06-28

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1{micro}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  6. Peculiarities of spin reorientation in a thin YIG film

    Energy Technology Data Exchange (ETDEWEB)

    Bazaliy, Ya.B.; Tsymbal, L.T.; Linnik, A.I.; Dan' shin, N.K.; Izotov, A.I.; Wigen, P.E

    2003-05-01

    The issue of magnetic orientation transitions in thin films combines interesting physics and importance for applications. We study the magnetic transition and phase diagram of a 0.1 {mu}m thick (YLaGd){sub 3}(FeGa){sub 5}O{sub 12} films grown on GGG substrate by liquid phase epitaxy. Observed transitions are compared with those in BiGa:TmIG thin films, studied in previous work by one of the authors. A general picture of orientation transitions in thin films of substituted YIG is discussed.

  7. Preface: Advanced Thin Film Developments and Nano Structures

    Institute of Scientific and Technical Information of China (English)

    Ray Y.Lin

    2005-01-01

    @@ In this special issue, we invited a few leading materials researchers to present topics in thin films, coatings, and nano structures. Readers will find most recent developments in topics, including recent advances in hard, tough, and low friction nanocomposite coatings; thin films for coating nanomaterials; electroless plating of silver thin films on porous Al2O3 substrate; CrN/Nano Cr interlayer coatings; nano-structured carbide derived carbon (CDC) films and their tribology; predicting interdiffusion in high-temperature coatings; gallium-catalyzed silica nanowire growth; and corrosion protection properties of organofunctional silanes. Authors are from both national laboratories and academia.

  8. Electrochemical Intercalation of Sodium into Silicon Thin Film

    Institute of Scientific and Technical Information of China (English)

    Dong-Yeon Kim; Hyo-Jun Ahn; Gyu-Bong Cho; Jong-Seon Kim; Ho-Suk Ryu; Ki-Won Kim; Jou-Hyeon Ahn; Won-Cheol Shin

    2008-01-01

    In order to investigate the possibility of Si thin film as an anode for Na battery, we studied the electrochemical intercalation of sodium into the Si film. Amorphous Si thin film electrode was prepared using DC magnetron sputtering. Sodium ion could intercalate into Si thin film upto Na0.52Si, i.e. 530mAh · g-1-Si. The first discharge capacity was 80mAh.·g-1-Si, which meant reversible amount of sodium intercalation. The discharge capacity slightly decreased to 70mAh · g-1-Si after 10 cycles.

  9. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  10. Density of organic thin films in organic photovoltaics

    Science.gov (United States)

    Zhao, Cindy X.; Xiao, Steven; Xu, Gu

    2015-07-01

    A practical parameter, the volume density of organic thin films, found to affect the electronic properties and in turn the performance of organic photovoltaics (OPVs), is investigated in order to benefit the polymer synthesis and thin film preparation in OPVs. To establish the correlation between film density and device performance, the density of organic thin films with various treatments was obtained, by two-dimensional X-ray diffraction measurement using the density mapping with respect to the crystallinity of thin films. Our results suggest that the OPV of higher performance has a denser photoactive layer, which may hopefully provide a solution to the question of whether the film density matters in organic electronics, and help to benefit the OPV industry in terms of better polymer design, standardized production, and quality control with less expenditure.

  11. A versatile platform for magnetostriction measurements in thin films

    Science.gov (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  12. Mechanism and characters of thin film lubrication at nanometer scale

    Institute of Scientific and Technical Information of China (English)

    雒建斌; 温诗铸

    1996-01-01

    Thin film lubrication is a transition region between elastohydrodynamic lubrication and boundary lubrication, A technique of relative optical interference intensity with the resolution of 0.5 nm in the vertical direction and 1.5 nm in the horizontal direction is used in a pure rolling process to measure the film thickness with different lubricants, speeds, loads and substrate surface energy. Experimental data show that the characteristics of thin film lubrication are different from those of elastohydrodynamic lubrication and boundary lubrication. As the rolling speed decreases, a critical film thickness can be found to distinguish thin film lubrication from elastohydrodynamic lubrication. Such thickness is related to the substrate surface energy, atmospheric viscosity of lubricant, etc. A physical model of thin film lubrication with the fluid layer, the ordered liquid layer and the adsorbed layer is proposed and the functions of these different layers are discussed.

  13. Thin Films for Advanced Glazing Applications

    Directory of Open Access Journals (Sweden)

    Ann-Louise Anderson

    2016-09-01

    Full Text Available Functional thin films provide many opportunities for advanced glazing systems. This can be achieved by adding additional functionalities such as self-cleaning or power generation, or alternately by providing energy demand reduction through the management or modulation of solar heat gain or blackbody radiation using spectrally selective films or chromogenic materials. Self-cleaning materials have been generating increasing interest for the past two decades. They may be based on hydrophobic or hydrophilic systems and are often inspired by nature, for example hydrophobic systems based on mimicking the lotus leaf. These materials help to maintain the aesthetic properties of the building, help to maintain a comfortable working environment and in the case of photocatalytic materials, may provide external pollutant remediation. Power generation through window coatings is a relatively new idea and is based around the use of semi-transparent solar cells as windows. In this fashion, energy can be generated whilst also absorbing some solar heat. There is also the possibility, in the case of dye sensitized solar cells, to tune the coloration of the window that provides unheralded external aesthetic possibilities. Materials and coatings for energy demand reduction is highly desirable in an increasingly energy intensive world. We discuss new developments with low emissivity coatings as the need to replace scarce indium becomes more apparent. We go on to discuss thermochromic systems based on vanadium dioxide films. Such systems are dynamic in nature and present a more sophisticated and potentially more beneficial approach to reducing energy demand than static systems such as low emissivity and solar control coatings. The ability to be able to tune some of the material parameters in order to optimize the film performance for a given climate provides exciting opportunities for future technologies. In this article, we review recent progress and challenges in

  14. An overview of thin film nitinol endovascular devices.

    Science.gov (United States)

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  15. Characterization of reliability of printed indium tin oxide thin films.

    Science.gov (United States)

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  16. Altering properties of cerium oxide thin films by Rh doping

    Energy Technology Data Exchange (ETDEWEB)

    Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Haviar, Stanislav, E-mail: stanislav.haviar@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Matolín, Vladimír, E-mail: matolin@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  17. Influence of microstructure on the corrosion resistance of Fe-44Ni thin films

    Science.gov (United States)

    Lu, Lin; Liu, Tian-cheng; Li, Xiao-gang

    2016-06-01

    An Fe-44Ni nanocrystalline (NC) alloy thin film was prepared through electrodeposition. The relation between the microstructure and corrosion behavior of the NC film was investigated using electrochemical methods and chemical analysis approaches. The results show that the NC film is composed of a face-centered cubic phase (γ-(Fe,Ni)) and a body-centered cubic phase (α-(Fe,Ni)) when it is annealed at temperatures less than 400°C. The corrosion resistance increases with the increase in grain size, and the corresponding corrosion process is controlled by oxygen reduction. The NC films annealed at 500°C and 600°C do not exhibit the same pattern, although their grain sizes are considerably large. This result is attributed to the existence of an anodic phase, Fe0.947Ni0.054, in these films. Under this condition, the related corrosion process is synthetically controlled by anodic dissolution and depolarization.

  18. Influence of microstructure on the corrosion resistance of Fe-44Ni thin films

    Institute of Scientific and Technical Information of China (English)

    Lin Lu; Tian-cheng Liu; Xiao-gang Li

    2016-01-01

    An Fe–44Ni nanocrystalline (NC) alloy thin film was prepared through electrodeposition. The relation between the microstructure and corrosion behavior of the NC film was investigated using electrochemical methods and chemical analysis approaches. The results show that the NC film is composed of a face-centered cubic phase (γ-(Fe,Ni)) and a body-centered cubic phase (α-(Fe,Ni)) when it is annealed at temperatures less than 400°C. The corrosion resistance increases with the increase in grain size, and the corresponding corrosion process is controlled by oxygen reduction. The NC films annealed at 500°C and 600°C do not exhibit the same pattern, although their grain sizes are considerably large. This result is attributed to the existence of an anodic phase, Fe0.947Ni0.054, in these films. Under this condition, the related corrosion process is synthetically controlled by anodic dissolution and depolarization.

  19. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  20. Thin film adhesion by nanoindentation-induced superlayers. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Gerberich, William W.; Volinsky, A.A.

    2001-06-01

    This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

  1. On Ginzburg-Landau Vortices of Superconducting Thin Films

    Institute of Scientific and Technical Information of China (English)

    Shi Jin DING; Qiang DU

    2006-01-01

    In this paper, we discuss the vortex structure of the superconducting thin films placed in a magnetic field. We show that the global minimizer of the functional modelling the superconducting thin films has a bounded number of vortices when the applied magnetic field hex < Hc1 + K log |log ε|where Hc1 is the lower critical field of the film obtained by Ding and Du in SIAM J. Math. Anal.,2002. The locations of the vortices are also given.

  2. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  3. Pulsed laser deposition and characterisation of thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Morone, A. [CNR, zona industriale di Tito Scalo, Potenza (Italy). Istituto per i Materiali Speciali

    1996-09-01

    Same concepts on pulsed laser deposition of thin films will be discussed and same examples of high transition temperature (HTc) BiSrCaCuO (BISCO) and low transition temperature NbN/MgO/NbN multilayers will be presented. X-ray and others characterizations of these films will be reported and discussed. Electrical properties of superconducting thin films will be realized as a function of structural and morphological aspect.

  4. Commercial Development Of Ovonic Thin Film Solar Cells

    Science.gov (United States)

    Ovshinsky, Stanford R.

    1983-09-01

    subsequent paper) which has clearly demonstrated that the basic barrier to low-cost production has been broken through and that one can now speak realistically of delivering power directly from the sun for under a dollar per peak watt merely by making larger versions of this basic continuous web, large-area thin-film machine. We have made one square foot amorphous silicon alloy PIN devices with conversion efficiencies in the range of 7%, and in the laboratory, we have reported smaller area PIN de-vices in the 10% conversion efficiency range. In addition, much higher energy conversion efficiencies can be obtained within the same process by using multi-cell layered or tandem thin-film solar cell structures (see Figure 1). These devices exhibit enhanced efficiency by utilizing a wider range of the solar spectrum. Since the theoretical maximum efficiency for multi-cell structures is over 60%, one can certainly realistically anticipate the pro-duction of thin-film amorphous photovoltaic devices with efficiencies as high as 30%. Our production device is already a two-cell tandem, as we have solved not only the problems of interfacing the individual cell components but also the difficulties associated with a one foot square format deposited on a continuous web. Figure 2 shows a continuous roll of Ovonic solar cells. Realistic calculations for a three-cell tandem thin-film device using amorphous semiconductor alloys with 1.8eV, 1.5eV, and 1.0eV optical band gaps indicate that solar energy conversion efficiencies of 20-30% can be achieved.

  5. The corrosion behavior of nanocrystalline nickel based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Danışman, Murat, E-mail: muratdan@gmail.com

    2016-03-01

    In this study, the effect of Cr addition on corrosion behavior of Ni thin films were investigated. Ni thin films and Ni films with three different Cr content were deposited on glass substrates by magnetron sputtering. After deposition process, thin films with different Cr content were thermally treated in a rapid thermal process system. Phase analysis and grain size calculations of the samples were carried out by X-ray diffraction analysis. In order to reveal corrosion properties, potentiodynamic tests were conducted on samples. Analysis revealed that, although Cr addition to pure-Ni thin films improved their corrosion resistance, occurrence of σ-Cr{sub 3}Ni{sub 2} phase at higher Cr contents increased corrosion rate. The corrosion properties of the samples were also investigated by electrochemical impedance spectroscopy and surface related parameters caused by corrosion reactions were calculated. The analysis revealed that at 55% wt. Cr, rapid ion exchange occurred and highest corrosion current, 23.4 nA cm{sup −2} was observed. - Highlights: • Thin film Ni–Cr samples were deposited on glass substrate. • Effect of Cr addition on corrosion behavior of Ni thin films were investigated. • Potentiodynamic tests and electrochemical impedance spectroscopy methods were used. • Cr content in Ni thin films plays and important role on corrosion. • Up to a certain Cr content, Cr addition reduces corrosion rate.

  6. Patterns and conformations in molecularly thin films

    Science.gov (United States)

    Basnet, Prem B.

    Molecularly thin films have been a subject of great interest for the last several years because of their large variety of industrial applications ranging from micro-electronics to bio-medicine. Additionally, molecularly thin films can be used as good models for biomembrane and other systems where surfaces are critical. Many different kinds of molecules can make stable films. My research has considered three such molecules: a polymerizable phospholipid, a bent-core molecules, and a polymer. One common theme of these three molecules is chirality. The phospolipid molecules studied here are strongly chiral, which can be due to intrinsically chiral centers on the molecules and also due to chiral conformations. We find that these molecules give rise to chiral patterns. Bent-core molecules are not intrinsically chiral, but individual molecules and groups of molecules can show chiral structures, which can be changed by surface interactions. One major, unconfirmed hypothesis for the polymer conformation at surface is that it forms helices, which would be chiral. Most experiments were carried out at the air/water interface, in what are called Langmuir films. Our major tools for studying these films are Brewster Angle Microscopy (BAM) coupled with the thermodynamic information that can be deduced from surface pressure isotherms. Phospholipids are one of the important constituents of liposomes -- a spherical vesicle com-posed of a bilayer membrane, typically composed of a phospholipid and cholesterol bilayer. The application of liposomes in drug delivery is well-known. Crumpling of vesicles of polymerizable phospholipids has been observed. With BAM, on Langmuir films of such phospholipids, we see novel spiral/target patterns during compression. We have found that both the patterns and the critical pressure at which they formed depend on temperature (below the transition to a i¬‘uid layer). Bent-core liquid crystals, sometimes knows as banana liquid crystals, have drawn

  7. Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R W; Phillips, J E; Buchanan, W A; Eser, E; Hegedus, S S; McCandless, B E; Meyers, P V; Shafarman, W N [Univ. of Delaware, Newark, DE (United States)

    1996-08-01

    The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

  8. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C

    2000-01-01

    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  9. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  10. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  11. Characterization of lithium phosphorous oxynitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xiaohua; Bates, J.B.; Jellison, G.E. Jr.

    1996-01-01

    Electrical and electrochemical properties of an amorphous thin-film lithium electrolyte, lithium phosphorous oxynitride (Lipon), have been studied with emphasis on the stability window vs Li metal and the behavior of the Li/Lipon interface. Ion conductivity of Lipon exhibits Arrhenius behavior at {minus}26 to +140 C, with a conductivity of 1.7 {times} 10{sup {minus}6}S/cm at 25 C and an activity energy of 0.50 {plus_minus} 0.01 eV. A stability window of 5.5 V was observed with respect to a Li{sup +}/Li reference, and no detectable reaction or degradation was evident at the Li/Lipon interface upon lithium cycling.

  12. Nonlinear optics of astaxanthin thin films

    Science.gov (United States)

    Esser, A.; Fisch, Herbert; Haas, Karl-Heinz; Haedicke, E.; Paust, J.; Schrof, Wolfgang; Ticktin, Anton

    1993-02-01

    Carotinoids exhibit large nonlinear optical properties due to their extended (pi) -electron system. Compared to other polyenes which show a broad distribution of conjugation lengths, carotinoids exhibit a well defined molecular structure, i.e. a well defined conjugation length. Therefore the carotinoid molecules can serve as model compounds to study the relationship between structure and nonlinear optical properties. In this paper the synthesis of four astaxanthins with C-numbers ranging from 30 to 60, their preparation into thin films, wavelength dispersive Third Harmonic Generation (THG) measurements and some molecular modelling calculations will be presented. Resonant (chi) (3) values reach 1.2(DOT)10-10 esu for C60 astaxanthin. In the nonresonant regime a figure of merit (chi) (3)/(alpha) of several 10-13 esu-cm is demonstrated.

  13. Photoluminescence studies in epitaxial CZTSe thin films

    Science.gov (United States)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  14. Photodesorption from copper, beryllium, and thin films

    Science.gov (United States)

    Foerster, C. L.; Halama, H. J.; Korn, G.

    Ever increasing circulating currents in electron-positron colliders and light sources demand lower and lower photodesportion (PSD) from the surfaces of their vacuum chambers and their photon absorbers. This is particularly important in compact electron storage rings and B meson factories where photon power of several kw cm(exp -1) is deposited on the surfaces. Given the above factors, we have measured PSD from 1 m long bars of solid copper and solid beryllium, and TiN, Au and C thin films deposited on solid copper bars. Each sample was exposed to about 10(exp 23) photons/m with a critical energy of 500 eV at the VUV ring of the NSLS. PSD was recorded for two conditions: after a 200 C bake-out and after an Ar glow discharge cleaning. In addition, we also measured reflected photons, photoelectrons and desorption as functions of normal, 75 mrad, 100 mrad, and 125 mrad incident photons.

  15. Plasma synthesis of photocatalytic TiO x thin films

    Science.gov (United States)

    Sirghi, L.

    2016-06-01

    The development of efficient photocatalytic materials is promising technology for sustainable and green energy production, fabrication of self-cleaning, bactericidal, and super hydrophilic surfaces, CO2 photoreduction, and decomposition of toxic pollutants in air and water. Semiconductors with good photocatalytic activity have been known for four decades and they are regarded as promising candidates for these new technologies. Low-pressure discharge plasma is one of the most versatile technologies being used for the deposition of photocatalytic semiconductor thin films. This article reviews the main results obtained by the author in using low-pressure plasma for synthesis of TiO x thin films with applications in photocatalysis. Titanium dioxide thin films were obtained by radio frequency magnetron sputtering deposition, plasma enhanced chemical vapour deposition, and high power impulse magnetron sputtering deposition. The effects of the plasma deposition method, plasma parameters, film thickness and substrate on the film structure, chemical composition and photocatalytic activity are investigated. The photocatalytic activity of plasma synthesised TiO x thin films was estimated by UV light induced hydrophilicity. Measurements of photocurrent decay in TiO x thin films in vacuum and air showed that the photocatalytic activity is closely connected to the production, recombination and availability for surface reactions of photo-generated charge carriers. The photocatalytic activity of TiO x thin films was investigated at nanoscale by atomic force microscopy. Microscopic regions of different hydrophilicity on UV light irradiated films are discriminated by AFM atomic force microscopy measurements of adhesion and friction force.

  16. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  17. Orthogonal thin film magnetometer using the anisotropic magnetoresistance effect

    NARCIS (Netherlands)

    Ridder, de René M.; Fluitman, Jan H.

    1984-01-01

    In an orthogonal thin film magnetometer a driving field oriented in the plane of a permalloy film along its hard-axis, saturates this film periodically in positive and negative direction. On return from saturation and in absence of a magnetic field component along the easy-axis, the magnetization in

  18. Reorientation of magnetic anisotropy in obliquely sputtered metallic thin films

    NARCIS (Netherlands)

    Lisfi, A.; Lodder, J.C.; Wormeester, H.; Poelsema, B.

    2002-01-01

    Reorientation in the magnetic anisotropy as a function of film thickness has been observed in Co-Ni and Co thin films, obliquely sputtered on a polyethylene terephthalate substrate at a large incidence angle (70°). This effect is a consequence of the low magnetocrystalline anisotropy of the films (f

  19. Structure and magnetization in CoPd thin films and nanocontacts

    Science.gov (United States)

    Morgan, Caitlin; Schmalbuch, Klaus; García-Sánchez, Felipe; Schneider, Claus M.; Meyer, Carola

    2013-01-01

    We present results showing the structural and magnetic properties of MBE-grown extended films and nanostructured elements of various CoPd alloys. X-ray diffraction studies show that the thin films are polycrystalline, yet exhibit a strong preferential growth orientation along the (111) direction. Magnetic force microscopy and SQUID are used to gain an understanding of the magnetic behavior of the CoPd system with respect to competing anisotropy contributions, based on temperature-dependent SQUID data, collected between 4 and 300 K. The idea and potential implications of using CoPd as a contact material to achieve spin injection in carbon nanotube-based devices is discussed.

  20. Structural and optical studies on antimony and zinc doped CuInS2 thin films

    Science.gov (United States)

    Ben Rabeh, M.; Chaglabou, N.; Kanzari, M.; Rezig, B.

    2009-11-01

    The influence of Zn and Sb impurities on the structural, optical and electrical properties of CuInS2 thin films on corning 7059 glass substrates was studied. Undoped and Zn or Sb doped CuInS2 thin films were deposited by thermal evaporation method and annealed in vacuum at temperature of 450 ∘C Undoped thin films were grown from CuInS2 powder using resistively heated tungsten boats. Zn species was evaporated from a thermal evaporator all together to the CuInS2 powder and Sb species was mixed in the starting powders. The amount of the Zn or Sb source was determined to be in the range 0-4 wt% molecular weight compared with the CuInS2 alloy source. The films were studied by means of X-ray diffraction (XRD), Optical reflection and transmission and resistance measurements. The films thicknesses were in the range 450-750 nm. All the Zn: CuInS2 and Sb: CuInS2 thin films have relatively high absorption coefficient between 104 cm-1 and 105 cm-1 in the visible and the near-IR spectral range. The bandgap energies are in the range of 1.472-1.589 eV for Zn: CuInS2 samples and 1.396-1.510 eV for the Sb: CuInS2 ones. The type of conductivity of these films was determined by the hot probe method. Furthermore, we found that Zn and Sb-doped CuInS2 thin films exhibit P type conductivity and we predict these species can be considered as suitable candidates for use as acceptor dopants to fabricate CuInS2-based solar cells.