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Sample records for aiiibv semiconductors implanted

  1. Second-order nonlinear optical susceptibilities of AIIBVI and AIIIBV semiconductors

    Science.gov (United States)

    Kumar, V.; Sinha, Anita; Singh, B. P.; Chandra, S.

    2016-10-01

    The second-order nonlinear optical (NLO) susceptibilities χ123(2) of AIIBVI and AIIIBV groups of semiconductors with zincblende (ZB) structure have been studied. Two relations have been proposed for the calculation of χ123(2) (0) at zero frequency. One is based on bond charge model of Levine and the other is based on plasma oscillations theory of solids. Calculated values of χ123(2) (0) for all compounds are in fair agreement with the available experimental and reported values.

  2. Semiconductor Ion Implanters

    Science.gov (United States)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  3. Semiconductor applications of plasma immersion ion implantation technology

    Indian Academy of Sciences (India)

    Mukesh Kumar; Rajkumar; Dinesh Kumar; P J George

    2002-11-01

    Many semiconductor integrated circuit manufacturing processes require high dose of implantation at very low energies. Conventional beam line ion implantation system suffers from low beam current at low energies, therefore, cannot be used economically for high dose applications. Plasma immersion ion implantation (PIII) is emerging as a potential technique for such implantations. This method offers high dose rate irrespective of implantation energy. In the present study nitrogen ions were implanted using PIII in order to modify the properties of silicon and some refractory metal films. Oxidation behaviour of silicon was observed for different implantation doses. Diffusion barrier properties of refractory barrier metals were studied for copper metallization.

  4. Dot-array implantation for patterned doping of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Wanzenboeck, H.D. [Institute f. Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria)]. E-mail: heinz.wanzenboeck@tuwien.ac.at; Ostermaier, C. [Institute f. Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria); Gruen, A. [Institute f. Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria); Eichinger, B. [Institute f. Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria); Karner, M. [Institute f. Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria); Bertagnolli, E. [Institute f. Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna (Austria)

    2006-01-15

    Novel ion beam processing for microelectronic applications has been performed by doping silicon with a focused ion beam tool. A Ga{sup +} ion beam with a energy between 10 and 50 keV was used for p-doping of Si. The ion beam could be focused to an effective beam diameter in the sub-micron range with the smallest focus own below 10 nm. In contrast to conventional implantation with a broad ion beam where the doped area is assigned by a hardmask the implantation was achieved by scanning a focused ion beam over the designated implantation area. With this approach not only the hardmask becomes obsolete because of the electronic beam guidance. Moreover, different doses may be implanted on the same wafer. An additional feature is the inhomogeneous implantation in a pixel-array, where the distance between exposed pixels can be deliberately varied. Even single spots can be independently doped with the focused gallium beam. Due to lateral scattering of ions in the semiconductor the circular implantation area is larger than the beam diameter. With a variation of the pixel spacing we could intentionally obtain either a overlap or a separation of implantation spots. With a four-point method we have investigated the conductivity of the dot-array implanted area. The conductivity of the p-doped region could be deliberately scaled by varying the pixel spacing, the implantation dose and the ion energy. The effective implantation diameter of a single pixel could be determined. This modified implantation approach was also used to fabricate functional p-channel MOSFET's. The Ga implantation with a focused ion beam was used for p-doping of source and drain regions of the transistor device. The utilization of this dot-array implantation with a FIB for semiconductor circuitry demonstrates the potential application of this approach. With the laterally inhomogeneous implantation dot-arrays of doped zones in the nanometer range could be fabricated.

  5. Molecular ion sources for low energy semiconductor ion implantation (invited)

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov [Brookhaven National Laboratory, Upton, New York 11973 (United States); Gushenets, V. I.; Bugaev, A. S.; Oks, E. M.; Vizir, A.; Yushkov, G. Yu. [High Current Electronics Institute, Siberian Branch of Russian Academy of Sciences, Tomsk 634055 (Russian Federation); Seleznev, D. N.; Kulevoy, T. V.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S. [Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Dugin, S.; Alexeyenko, O. [State Scientific Center of the Russian Federation State Research Institute for Chemistry and Technology of Organoelement Compounds, Moscow (Russian Federation)

    2016-02-15

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C{sub 4}H{sub 12}B{sub 10}O{sub 4}) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH{sub 3} = P{sub 4} + 6H{sub 2}; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P{sub 4}{sup +} ion beams were extracted. Results from devices and some additional concepts are described.

  6. Advanced transmission electron microscopy studies in low-energy ion implanted Si Semiconductors; Junctions; Silicon

    CERN Document Server

    Wang, T S

    2002-01-01

    As the dimensions of semiconductor devices shrink down to 0.1 mu m and beyond, low energy ion implantation is required to introduce shallower junctions to match such small devices. In this work, transmission electron microscopy (TEM) is employed to analyse low energy implanted junctions with both structural and chemical analyses. High resolution transmission electron microscopy (HRTEM) has been employed to observe Si crystal damage and amorphization due to low energy B sup + /As sup + ion implantations, and also, defect formation/annihilation during rapid thermal annealing (RTA). The damage effects due to different implant temperatures between 300 deg C and -150 deg C are also discussed. Since knowledge of the distribution of low energy ion implanted dopants in Si is extremely important for semiconductor device processing, energy filtered transmission electron microscopy (EFTEM) has been employed to determine implanted B distributions in Si while Z-contrast imaging and X-ray analytical mapping techniques are ...

  7. Effect of disorder and defects in ion-implanted semiconductors electrical and physiochemical characterization

    CERN Document Server

    Willardson, Robert K; Christofides, Constantinos; Ghibaudo, Gerard

    2014-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.Electrical and Physicochemical Characterization focuses on the physics of the annealing kine

  8. Emission Channeling Investigation of Implantation Defects and Impurities in II-VI-Semiconductors

    CERN Multimedia

    Trojahn, I; Malamud, G; Straver, J; Ronnqvist, C; Jahn, S-G; Restle, M

    2002-01-01

    Detailed knowledge on the behaviour of implantation damage and its influence on the lattice position and environment of implanted dopants in II-VI-compound semiconductors is necessary for a clear interpretation of results from other investigation methods and finally for technical utilization. Besides, a precise localization of impurities could help to clarify the discussion about the instability of the electrical properties of some dopants, called " aging ".\\\\ \\\\We intend to use the emission channeling method to investigate: \\\\ \\\\i) The behaviour of implantation damage which shall be probed by the lattice location of isoelectronic isotopes (Zn,Cd,Hg,Se,Te) directly after implantation at different temperatures, doses and vacancy densities and after annealing treatments, and ii) the precise lattice sites of the acceptor Ag and donor In under different conditions by implanting precursors Cd and In isotopes. \\\\ \\\\Further on we would like to test the application of a two-dimensional position and energy sensitive e...

  9. Ion Implantation in III-V Compound Semiconductors

    Science.gov (United States)

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  10. Gas feeding molecular phosphorous ion source for semiconductor implanters

    Science.gov (United States)

    Gushenets, V. I.; Oks, E. M.; Bugaev, A. S.; Kulevoy, T. V.; Hershcovitch, A.

    2014-02-01

    Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus—red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ˜ 2 × 105, P4/P ˜ 1021). It is for this reason that red phosphorus is best suited as a source of polyatomic molecular ion beams. The paper reports on experimental research in the generation of polyatomic phosphorus ion beams with an alternative P vapor source for which a gaseous compound of phosphorus with hydrogen - phosphine - is used. The ion source is equipped with a specially designed dissociator in which phosphine heated to temperatures close to 700 °C decomposes into molecular hydrogen and phosphorus (P4) and then the reaction products are delivered through a vapor line to the discharge chamber. Experimental data are presented reflecting the influence of the discharge parameters and temperature of the dissociator heater on the mass-charge state of the ion beam.

  11. 2nd International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects

    CERN Document Server

    Graul, Jürgen

    1971-01-01

    In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume c...

  12. Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A., E-mail: attaullah77@yahoo.com [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Ahmad, Jamil [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Ahmad, Ishaq [Experimental Physics Lab, National Center for Physics (NCP), Islamabad (Pakistan); Mehmood, Mazhar [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan); Mahmood, Arshad [National Institute of Lasers and Optronics (NILOP), PO Nilore, Islamabad (Pakistan); Rasheed, Muhammad Asim [DMME, Pakistan Institute of Engineering and Applied Science (PIEAS), PO Nilore, Islamabad (Pakistan)

    2014-10-30

    Highlights: • AlN:Cu dilute magnetic semiconductors were successfully prepared by molecular beam epitaxy followed by Cu{sup +} implantation. • Room temperature ferromagnetism was observed after annealing the samples at appropriate temperature. • XRD and Raman spectrometry excluded the possibility of formation of any secondary phases. • By doping intrinsically nonmagnetic dopants (Cu), it has been proved experimentally that their precipitates do not contribute to ferromagnetism. • The reason for ferromagnetism in Cu-doped AlN as observed was explained on the basis of p–d hybridization mechanism (Wu et al.). - Abstract: Diluted magnetic semiconductor (DMS) AlN:Cu films were fabricated by implanting Cu{sup +} ions into AlN thin films at various ion fluxes. AlN films were deposited on c-plane sapphire by molecular beam epitaxy followed by Cu{sup +} ion implantation. The structural and magnetic characterization of the samples was performed through Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Incorporation of copper into the AlN lattice was confirmed by RBS, while XRD revealed that no new phase was formed as a result of ion implantation. RBS also indicated formation of defects as a result of implantation process and the depth and degree of damage increased with an increase in ion fluence. Raman spectra showed only E{sub 2} (high) and A{sub 1} (LO) modes of wurtzite AlN crystal structure and confirmed that no secondary phases were formed. It was found that both Raman modes shift with Cu{sup +} fluences, indicating that Cu ion may go to interstitial or substitutional sites resulting in distortion or damage of lattice. Although as implanted samples showed no magnetization, annealing of the samples resulted in appearance of room temperature ferromagnetism. The saturation magnetization increased with both the annealing temperature as well as with ion

  13. Doping Properties of Ferromagnetic Semiconductors Investigated by the Hyperfine Interaction of Implanted Radioisotopes

    CERN Multimedia

    2002-01-01

    One of the most promising prospective applications of semiconductors will be in the field of spinelectronics. Thereby polarized spins must be injected into semiconductor structures. Ferromagnetic semiconductors (FMS) have a potential for such applications because of the coexistence of semiconducting and ferromagnetic properties. A special group of such FMS are the chromium chalcogenides of type AB$_{2}$C$_{4}$ with B = Cr. They crystallise in the structure of normal spinel. In this Proposal the application of the perturbed angular correlation technique (= PAC) for the investigation of nuclear probes in these substances is described. The radioactive probes will be implanted at the ISOLDE separator. We will start these investigations with the substances CdCr$_{2}$Se$_{4}$, CdCr$_{2}$S$_{4}$, HgCr$_{2}$Se$_{4}$, CuCr$_{2}$Se$_{4}$ and CuCr$_{2}$S$_{4}$ which are ferromagnetic with Curie temperatures between 84.5 and 460 K. In addition to the popular $^{111}$In($^{111}$Cd), which we get from other facilities, we ...

  14. Novel effects of weak magnetic fields on post-implantation damage in semiconductors and superconducting ceramics

    Science.gov (United States)

    Khait, Yu. L.

    1996-08-01

    Novel experimentally verifiable and theoretically explained effects of weak static magnetic fields (WSMFs) acting during ion implantation of semiconductors and superconducting ceramics (SCC) at 300 K, moderate ion energies (e.g. 200-400 keV) and low dosage (e.g. 10 11-10 13 m -2) on the post-implantation radiation damage (PIRD) and material parameters are discussed. The WSMF of strength of H ≈ 1 kOe reduces, as previously reported, the PIRD in Hg 08Cd 02Te and InSb by factors of 2 and 1.54, respectively, and can increase the PIRD and change material parameters in SCCs. The WSMF effects on the radiation damage is a generic consequence of the kinetic electron-related theory of atomic rate processes in solids which shows that local electron transitions (LETs) in the nanometer vicinity of hopping atoms (defects) influence exponentially defect formation and migration rates. The magnetic field changing the LET number affects exponentially the rates of formation, migration and agglomeration of point defects and thus change the radiation damage.

  15. Novel effects of weak magnetic fields on post-implantation damage in semiconductors and superconducting ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Khait, Y.L. [Technion-Israel Inst. of Tech., Haifa (Israel). Solid State Inst.

    1996-08-01

    Novel experimentally verifiable and theoretically explained effects of weak static magnetic fields (WSMFs) acting during ion implantation of semiconductors and superconducting ceramics (SCC) at 300 K, moderate ion energies (e.g. 200-400 keV) and low dosage (e.g. 10{sup 11}-10{sup 13} m{sup -2}) on the post-implantation radiation damage (PIRD) and material parameters are discussed. The WSMF of strength of H{approx}1 kOe reduces, as previously reported, the PIRD in Hg{sub 08}Cd{sub 02}Te and InSb by factors of 2 and 1.54, respectively, and can increase the PIRD and change material parameters in SCCs. The WSMF effects on the radiation damage is a generic consequence of the kinetic electron-related theory of atomic rate processes in solids which shows that local electron transitions (LETs) in the nanometer vicinity of hopping atoms (defects) influence exponentially defect formation and migration rates. The magnetic field changing the LET number affects exponentially the rates of formation, migration and agglomeration of point defects and thus change the radiation damage. (orig.).

  16. Semiconductor thin film transfer by wafer bonding and advanced ion implantation layer splitting technologies

    Science.gov (United States)

    Lee, Tien-Hsi

    Wafer bonding is an attractive technology for modern semiconductor and microelectronic industry due to its variability in allowing combination of materials. Initially, the bonding of wafers of the same material, such as silicon-silicon wafer bonding has been major interest. In the meantime, research interest has shifted to the bonding of dissimilar materials such as silicon to quartz or to sapphire. Thermal stress coming from the different expansion coefficients usually is a barrier to the success of dissimilar material bonding. Thermal stress may cause debonding, sliding, cracking, thermal misfit dislocations, or film wrinkle to impair the quality of the transferred layer. This dissertation presents several effective approaches to solve the thermal stress problem. These approaches concern bonding processes (low vacuum bonding and storage), thinning (advanced ion implantation layer splitting), and annealing processes (accumulative effect of blister generation) and are combined to design the best heat-treatment cycle. For this propose the concept of hot bonding is used in order to effectively minimize the thermal mismatch of dissimilar material bonding during the bonding and thinning procedures. During the initial bonding and bond strengthening phase, the difference in the temperature between bonding and annealing processes should be decreased as much as possible to avoid excessive thermal stresses. This concept can be realized either by increasing the bonding temperature or by decreasing the annealing temperature. A thinning technique has to employed that can thin the device wafer before debonding occurs due to the thermal stress generated either from the cooling-down process in the first case or by the annealing process itself in the late case. The ion implantation layer splitting method, also known as the Smart-cutsp°ler process, developed by Bruel at LEIT in France is a practical thinning technique which satisfies the above requirement. In the study, an

  17. Oxidative removal of implanted photoresists and barrier metals in semiconductor processing

    Science.gov (United States)

    Govindarajan, Rajkumar

    Chemical systems containing oxidants are widely used at various stages in semiconductor processing, particularly for wet cleaning and polishing applications. This dissertation presents a series of studies related to oxidative removal of materials in the Front-End-Of-Line (FEOL) and Chemical Mechanical Planarization (CMP) processes during IC fabrication. In the first part of this study, stripping of photoresists exposed to high dose of ions (1E16 As/cm2) was investigated in activated hydrogen peroxide systems. Stripping of photoresists (PR) exposed to high dose (>1E15/cm2) ion beams is one of the most challenging steps in FEOL processing. This is due to unreactive crust layer that forms on the resist surface during ion implantation. The use of hydrogen peroxide systems activated by metal ion or UV light, for disrupting crust formed on deep UV resist to enable complete removal of crust as well as underlying photoresist was investigated. A systematic evaluation of variables such as hydrogen peroxide and metal ion concentration, UV intensity, temperature and time was conducted and an optimal formulation capable of attacking the crust was developed. A two step process involving pretreatment with activated hydrogen peroxide solution, followed by treatment with sulfuric acid-hydrogen peroxide mixture (SPM) was developed for complete removal of crusted resist films. In the second part of this study, electrochemically enhanced abrasive removal of Ta/TaN films was investigated in solutions containing 2,5 dihydroxy benzene sulfonic acid (DBSA) and potassium iodate (KIO3). This method known as Electrically-assisted Chemical Mechanical Planarization (ECMP) is generating a lot of interest in IC manufacturing. Ta/TaN films were abraded at low pressures (tantalum and tantalum nitride removal rates of ˜170 A0/min and ˜200 A 0/min, respectively have been obtained at a current density of 1 mA/cm 2. The use of benzotriazole as a copper inhibitor was required to obtain Ta to Cu

  18. Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Faye, D. Nd.; Fialho, M.; Magalhães, S.; Alves, E. [IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal); Ben Sedrine, N.; Rodrigues, J.; Correia, M.R.; Monteiro, T. [Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Boćkowski, M. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Hoffmann, V.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin (Germany); Lorenz, K., E-mail: lorenz@ctn.tecnico.ulisboa.pt [IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS (Portugal)

    2016-07-15

    An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p–n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.

  19. Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides

    Science.gov (United States)

    Kapetanakis, E.; Normand, P.; Holliger, P.

    2008-03-01

    The electrical characteristics of low-energy (3keV) Ge-implanted and, subsequently, thermal annealed SiO2 layers are investigated through capacitance-voltage (C-V ) and conductance-voltage (G-V) measurements of metal-oxide-semiconductor capacitors. Particular emphasis is placed on the properties of such gate oxides for memory applications. Capacitance measurements at flatband voltage before and after the application of constant voltage stress in the accumulation regime indicate that the charge trapping behavior of the devices undergoes a major change after annealing at temperatures higher than 910°C. The latter change is identified as a relocation of Ge atoms mainly toward the upper portion of the oxide with a significant fraction of them leaving the oxide; a finding in harmony with secondary ion mass spectroscopy analysis. The interface trap density (Dit) for the thin (9-12nm) implanted oxides decreases with increasing annealing temperature, approaching at 950°C the Dit levels in the mid-1010eV-1cm-2 range of the nonimplanted samples. At elevated annealing temperatures (>1000°C), the device C-V characteristics are substantially disturbed. In this case, the presence of electrically active Ge atoms at an extended depth in the substrate modifies the intrinsic electrical properties of the n-Si substrate, lending a p-type conductivity character to the device high-frequency C-V curves. Substrate electrical modification is interpreted through a model that takes into account the formation of a SiO2/Ge-rich-Si /n-Si system. The SiO2/Ge-rich-Si interface presents very low Dit levels as revealed by conductance loss characteristics. The present study suggests that a combination of Ge implantation into SiO2 films and thermal annealing may be exploited in damage-free SiGe epitaxial growth technology based on Ge implantation.

  20. Measurement of lattice damage caused by ion-implantation doping of semiconductors.

    Science.gov (United States)

    Hunsperger, R. G.; Wolf, E. D.; Shifrin, G. A.; Marsh, O. J.; Jamba, D. M.

    1971-01-01

    Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.

  1. SEMICONDUCTOR DEVICES: Reducing the influence of STI on SONOS memory through optimizing added boron implantation technology

    Science.gov (United States)

    Yue, Xu; Feng, Yan; Zhiguo, Li; Fan, Yang; Yonggang, Wang; Jianguang, Chang

    2010-09-01

    The influence of shallow trench isolation (STI) on a 90 nm polysilicon-oxide-nitride-oxide-silicon structure non-volatile memory has been studied based on experiments. It has been found that the performance of edge memory cells adjacent to STI deteriorates remarkably. The compressive stress and boron segregation induced by STI are thought to be the main causes of this problem. In order to mitigate the STI impact, an added boron implantation in the STI region is developed as a new solution. Four kinds of boron implantation experiments have been implemented to evaluate the impact of STI on edge cells, respectively. The experimental results show that the performance of edge cells can be greatly improved through optimizing added boron implantation technology.

  2. Are Fe and Co implanted ZnO and III-nitride semiconductors magnetic?

    CERN Document Server

    AUTHOR|(CDS)2081284; Bharuth-Ram, Krish

    The chemical nature, lattice site locations and magnetic behaviour of Fe and/or Co ions implanted in nitrides (GaN, AlN, and InN) and in ZnO have been investigated using Mössbauer spectroscopy and vibrating sample magnetometer (VSM) techniques. Mössbauer data on nitride and $^{56}$Fe pre-implanted ZnO samples were obtained from emission Mössbauer spectroscopy (eMS) measurements at the ISOLDE facility, CERN, following the implantation of radioactive $^{57}$Mn$^{*}$ which $\\beta$$^{-}$decays to the 14.4 keV Mössbauer state of $^{57}$Fe. In addition, conversion electron Mössbauer spectroscopy (CEMS) data were collected on ZnO single crystals co-implanted with $^{57}$Fe + $^{56}$Fe and $^{57}$Fe + $^{59}$Co ions in a box profile. Emission Mössbauer spectra obtained for GaN and AlN reveal magnetic structure in the ‘wings’ assigned to high spin Fe$^{3+}$ weakly coupled to the lattice showing spin-lattice relaxation effects. The observed spin-relaxation rate (τ$^{-1}$) closely follows a ${T}^{2}$ temperat...

  3. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    CERN Document Server

    Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  4. Low Temperature Photoluminescence Study of Holmium and Thulium Implanted into III-V Semiconductors and Silicon.

    Science.gov (United States)

    1990-12-01

    Iwhere m* is the reduced mass formed from the nuclear mass and the electron or hole effective mass, and the other variables are as described for...Implanted Samples COND DOPING ANNEAL VENDOR3 TYPE TEMP/TIME/GAS n ? 750"C/15 min/N2 Wacker p B 750"C/15 min/N2 Reticon SI - 850"C/15 min/H2 MW SI

  5. Preparation of Si sub 1 sub - sub x sub - sub y Ge sub x C sub y semiconductor films on Si by ion implantation and solid phase epitaxy

    CERN Document Server

    Liu Xue Qin; Zhen Cong Mian; Zhang Jing; Yang Yi; Guo Yong

    2002-01-01

    Si sub 1 sub - sub x sub - sub y Ge sub x C sub y ternary alloy semiconductor films were prepared on Si(100) substrates by C ion implanting SiGe films and subsequent solid phase epitaxy (SPE). Two-step annealing technique was employed in the SPE processing. The properties of the alloy films were determined using Rutherford backscattering spectroscopy (RBS), Fourier transform infrared spectroscopy (FTIR) and High-resolution x-ray diffraction (HRXRD) measurements. It is shown that C atoms are located at substitutional sites and the incorporation of C relieves the compressive strain in the SiGe layer

  6. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  7. Adsorption properties of CdS-CdTe system semiconductors

    Science.gov (United States)

    Kirovskaya, I. A.; Nor, P. E.

    2013-12-01

    The adsorption of carbon(II) oxide and ammonia on nanofilms of solid solutions and binary compounds of the CdS-CdTe system is studied by means of piezoquartz microweighing, FTIR IR, and measuring electroconductivity. Allowing for the conditions and composition of semiconductor systems, we determine the mechanisms and principles of adsorption processes by analyzing the α p = f( T), α T = f( p), and α T = f( t) experimental dependences; IR spectra; the thermodynamic and kinetic characteristics of adsorption; the acid-base, electrophysical, and other characteristics of adsorbents; the electron nature of adsorbate molecules; and the obtained acid-base characteristics: the composition and adsorption characteristics and composition state diagrams. Previous statements on the nature and retention of local active centers responsible for adsorption and catalytic processes upon changes in their habitus and composition (as components of systems of the AIIIBV-AIIBVI and AIIBVI-AIIBVI types) on the surface of diamond-like semiconductors are confirmed. Specific features of the behavior of (CdS) x (CdTe)1 - x solid solutions are identified in addition to general features with binary compounds (CdS, CdTe), as is demonstrated by the presence of critical points on acid-base characteristics-composition and adsorption characteristics-composition diagrams. On the basis of these diagrams, the most active adsorbents (with respect to CO and NH3) used in designing highly sensitive and selective sensors are identified.

  8. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  9. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Mohanta, S. K.; Mishra, S. N. [Tata Institute of Fundamental Research (TIFR), Homi Bhabha Road, Mumbai 400005 (India)

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  10. Implantable biomedical devices on bioresorbable substrates

    Science.gov (United States)

    Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo; Kaplan, David L; Litt, Brian; Viventi, Jonathan; Huang, Yonggang; Amsden, Jason

    2014-03-04

    Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between the implantable biomedical device and the target tissue in the biological environment.

  11. Breast Implants

    Science.gov (United States)

    ... Medical Procedures Implants and Prosthetics Breast Implants Breast Implants Share Tweet Linkedin Pin it More sharing options Linkedin Pin it Email Print Breast implants are medical devices that are implanted under the ...

  12. Back-side readout semiconductor photomultiplier

    Science.gov (United States)

    Choong, Woon-Seng; Holland, Stephen E

    2014-05-20

    This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

  13. Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation

    Energy Technology Data Exchange (ETDEWEB)

    Cooper, David, E-mail: david.cooper@cea.fr [CEA, LETI, MINATEC, F38054 Grenoble (France); Ailliot, Cyril; Barnes, Jean-Paul; Hartmann, Jean-Michel [CEA, LETI, MINATEC, F38054 Grenoble (France); Salles, Phillipe; Benassayag, Gerard [CEMES-CNRS, nMat group, 29 rue Jean Marvig, 31055 Toulouse (France); Dunin-Borkowski, Rafal E. [Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark)

    2010-04-15

    Focused ion beam (FIB) milling is one of the few specimen preparation techniques that can be used to prepare parallel-sided specimens with nm-scale site specificity for examination using off-axis electron holography in the transmission electron microscope (TEM). However, FIB milling results in the implantation of Ga, the formation of amorphous surface layers and the introduction of defects deep into the specimens. Here we show that these effects can be reduced by lowering the operating voltage of the FIB and by annealing the specimens at low temperature. We also show that the electrically inactive thickness is dependent on both the operating voltage and type of ion used during FIB milling.

  14. Penile Implants

    Science.gov (United States)

    ... the discussion with your doctor. Types of penile implants There are two main types of penile implants: ... might help reduce the risk of infection. Comparing implant types When choosing which type of penile implant ...

  15. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  16. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  17. Semiconductor heterojunctions

    CERN Document Server

    Sharma, B L

    1974-01-01

    Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers.Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then

  18. Low energy semiconductor laser irradiation in the treatment of exposed hydroxyapatite orbital implants%低功率半导体激光治疗羟基磷灰石义眼座暴露

    Institute of Scientific and Technical Information of China (English)

    廖洪斐; 陈蔷娟; 易敬林; 冯珍; 张向荣; 聂萍萍

    2003-01-01

    Aim To evaluate the value of low energy level of semiconductor laser irradiation in treatment of exposured hydroxyapatite orbital implants. Methods Twenty-two patients who suffered from the exposure were treated with multifunctional semiconductor laser therapy apparatus. They were divided into 3 groups according to the size of the exposure zone (vertical diameter: mild, ≤ 3mm; moderate:4-7mm; severe: 8-10mm). Every patient was treated for 5 minutes per day for 5 to 15 days. And the results were compared with another 20 patients suffering from the same disease who were treated by pharmacotherapy and/or operative therapy. Results All of the 22 patients treated by laser therapy were cured (100%), while the cure rates of the control who was further divided according to the severity of exposure size, i.e. mild, moderate and severe, were 83.3%, 63.6% and 0 respectively. So laser therapy was statistically superior to pharmacotherapy and/or operative therapy in the treatment of moderate and severe states of exposure. Conclusion Laser therapy is more effective than pharmacotherapy and/or operative therapy in treatment of the exposed hydroxyapatite orbital implants. Laser therapy can prevent the enlargement of the exposure zone.%目的探讨低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效.方法采用JAM-II型多功能半导体激光治疗仪(激光物质为GaA1As,激光波长650nm)对22例不同程度的义眼座暴露患者进行激光照射治疗,并将结果与既往采用药物及手术治疗的20例义眼座暴露患者比较.结果 激光组22例全部愈合(100%);药物及手术组中轻、中、重度的愈合率分别为83.3%,63.6%和0.经采用X2检验之四格表精确检验法处理,2组间轻度患者的愈合率在统计学上差异无显著性意义(P=0.545),而2组间中度和重度患者的愈合率在统计学上差异有显著性意义(P<0.05).结论低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效优于药物

  19. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  20. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  1. Moessbauer Studies of Implanted Impurities in Solids

    CERN Multimedia

    2002-01-01

    Moessbauer studies were performed on implanted radioactive impurities in semiconductors and metals. Radioactive isotopes (from the ISOLDE facility) decaying to a Moessbauer isotope were utilized to investigate electronic and vibrational properties of impurities and impurity-defect structures. This information is inferred from the measured impurity hyperfine interactions and Debye-Waller factor. In semiconductors isoelectronic, shallow and deep level impurities have been implanted. Complex impurity defects have been produced by the implantation process (correlated damage) or by recoil effects from the nuclear decay in both semiconductors and metals. Annealing mechanisms of the defects have been studied. \\\\ \\\\ In silicon amorphised implanted layers have been recrystallized epitaxially by rapid-thermal-annealing techniques yielding highly supersaturated, electrically-active donor concentrations. Their dissolution and migration mechanisms have been investigated in detail. The electronic configuration of Sb donors...

  2. Semiconductor Detectors; Detectores de Semiconductores

    Energy Technology Data Exchange (ETDEWEB)

    Cortina, E.

    2007-07-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  3. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  4. Semiconductor sensors

    Energy Technology Data Exchange (ETDEWEB)

    Hartmann, Frank, E-mail: frank.hartmann@cern.c [Institut fuer Experimentelle Kernphysik, KIT, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)

    2011-02-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  5. Semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Ito, K.; Shyuue, M.

    1982-09-25

    A distributed feedback semiconductor laser is proposed which generates several beams with equal wavelengths in different directions. For this purpose, 1 millimeter grooves are cut into the surface of an n-type conductance GaAs plate in three different directions; these grooves form a diffraction grating. The center of this plate has no grooves and is bombarded by an He/Ne laser beam. The diffraction gratings provide resonance properties and generate laser beams with wavelengths of 8850, 9000 and 9200 angstroms.

  6. Power semiconductors

    CERN Document Server

    Kubát, M

    1984-01-01

    The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation an...

  7. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  8. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  9. Cochlear Implants

    Science.gov (United States)

    A cochlear implant is a small, complex electronic device that can help to provide a sense of sound. People who are ... of-hearing can get help from them. The implant consists of two parts. One part sits on ...

  10. Workshop report and presentations from the Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop

    Science.gov (United States)

    The Semiconductor Research Corporation-DOE Semiconductor Task Force Workshop was held in Oak ridge, Tennessee, on November 2-3, 1987. It was to provide a forum for representatives of the national laboratories, DOE, and the semiconductor industry in which to discuss capabilities of the national laboratories which could contribute to the future competitiveness of the US semiconductor industry, to identify specific large and small projects at the national laboratories which would be of direct benefit to the semiconductor industry, and to find ways of implementing these projects. Numerous small projects were identified which would utilize unique capabilities of the national laboratories in advanced ion implantation, plasma processing (including electron cyclotron resonance plasmas), ion and cluster beam deposition, materials characterization, electronic packaging, and laser processing and deposition. Five large-scale candidate projects were identified in synchrotron x-ray lithography, silicon process integration, advanced materials processing science, process analysis and diagnostics, and ultra clean room engineering. The major obstacle to implementing these projects if the lack of appropriate funds to initiate and stimulate interactions between the national laboratories and the semiconductor industry. SEMATECH and the federal government are potential sources of seed funds for these projects. The Semiconductor Research Corporation is ideally suited to interface the semiconductor industry and the national laboratories for many of these interactions.

  11. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  12. Semiconductor laser. Halbleiterlaser

    Energy Technology Data Exchange (ETDEWEB)

    Wuenstel, K.; Gohla, B.; Tegude, F.; Luz, G.; Hildebrand, O.

    1987-08-27

    A highly modulable semiconductor laser and a process for its manufacture are described. The semiconductor laser has a substrate, a stack of semiconductor layers and electrical contacts. To reduce the capacity, the width of the stack of semiconductor layers is reduced at the sides by anisotropic etching. The electrical contacts are situated on the same side of the substrate and are applied in the same stage of the process. The semiconductor laser is suitable for monolithic integration in other components.

  13. Silicon metal-semiconductor-metal photodetector

    Science.gov (United States)

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  14. Quantum processes in semiconductors

    CERN Document Server

    Ridley, B K

    2013-01-01

    Aimed at graduate students, this is a guide to quantum processes of importance in the physics and technology of semiconductors. The fifth edition includes new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology.

  15. Handbook of spintronic semiconductors

    CERN Document Server

    Chen, Weimin

    2010-01-01

    Offers a review of the field of spintronic semiconductors. This book covers a range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, developments in theory and experimental techniques and potential device applications.

  16. Diffusion of Implanted Radioisotopes in Solids

    CERN Multimedia

    2002-01-01

    Implantation of radioisotopes into metal and semiconductor samples is performed. The implanted isotope or its decay-product should have a half-life long enough for radiotracer diffusion experiments. Such radioisotopes are utilized to investigate basic diffusion properties in semiconductors and metals and to improve our understanding of the atomic mechanisms of diffusion. For suitably chosen systems the combination of on-line production and clean implantation of radioisotopes at the ISOLDE facility opens new possibilities for diffusion studies in solids. \\\\ \\\\ The investigations are concentrated on diffusion studies of $^{195}$Au in amorphous materials. The isotope $^{195}$Au was obtained from the mass 195 of the mercury beam. $^{195}$Hg decays into $^{195}$Au which is a very convenient isotope for diffusion experiments. \\\\ \\\\ It was found that $^{195}$Au is a slow diffusor in amorphous Co-Zr alloys, whereas Co is a fast diffusor in the same matrix. The ``asymmetry'' in the diffusion behaviour is of considerab...

  17. Unitary lens semiconductor device

    Science.gov (United States)

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  18. ULTRATHIN SILICON MEMBRANES TO STUDY SUPERCURRENT TRANSPORT IN CRYSTALLINE SEMICONDUCTORS

    NARCIS (Netherlands)

    VANHUFFELEN, WM; DEBOER, MJ; KLAPWIJK, TM

    1991-01-01

    We have developed a two-step anisotropic etching process to fabricate thin silicon membranes, used to study supercurrent transport in semiconductor coupled weak links. The process uses a shallow BF2+ implantation, and permits easy control of membrane thickness less-than-or-equal-to 100 nm. Prelimina

  19. Electrostatically defined silicon quantum dots with counted antimony donor implants

    Energy Technology Data Exchange (ETDEWEB)

    Singh, M., E-mail: msingh@sandia.gov; Luhman, D. R.; Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87175 (United States); Pacheco, J. L.; Perry, D.; Garratt, E.; Ten Eyck, G.; Bishop, N. C.; Wendt, J. R.; Manginell, R. P.; Dominguez, J.; Pluym, T.; Bielejec, E.; Carroll, M. S. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2016-02-08

    Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors in 100 nm × 150 nm windows straddling quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular Coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. Infrared Semiconductor Metamaterials

    Science.gov (United States)

    2016-09-01

    AFRL-AFOSR-VA-TR-2016-0310 Infrared Semiconductor Metamaterials Jon Schuller UNIVERSITY OF CALIFORNIA SANTA BARBARA 3227 CHEADLE HL SANTA BARBARA, CA...From - To) 15-07-2013 to 14-07-2016 4. TITLE AND SUBTITLE Infrared Semiconductor Metamaterials 5a. CONTRACT NUMBER FA9550-13-1-0182 5b. GRANT...program are 1) establishing an approach for widely tunable resonators and metasurfaces 2) experimentally demonstrating widely tunable semiconductor

  2. Ion implantation in crystalline and amorphous materials

    Science.gov (United States)

    Tasch, Al F.

    1998-05-01

    been developed which accounts for the affect of cumulative Si lattice damage on the trajectory and energy loss of each subsequently implanted ion. This model follows the path of each implanted ion as it loses its energy until it comes to rest; it accounts for the creation of Si interstitials and vacancies in each individual cascade; and it accounts for the diffusion and interaction of interstitials and vacancies with one another and with defect complexes between successive cascades. The models and simulator described above have been proactively transferred to a very large number of individuals in many semiconductor companies and have gained wide acceptance.

  3. Semiconductor bridge (SCB) detonator

    Science.gov (United States)

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  4. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  5. Cochlear Implant

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    In this text, the authors recall the main principles and data ruling cochlear implants. Then, a first circle of technical equipment for assistance is presented. This circle includes: device setting (DS), Electrically evoked Auditory Brainstem Responses (EABR), Neural Response Telemetry (NRT), Stapedial Reflex (SR) and Electrodogram Acquisition (EA). This first cycle becomes more and more important as children are implanted younger and younger; the amount of data available with this assistance makes necessary the use of models (implicit or explicit) to handle this information. Consequently, this field is more open than ever.

  6. Semiconductor Research Experimental Techniques

    CERN Document Server

    Balkan, Naci

    2012-01-01

    The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.

  7. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  8. Applications of Semiconductor Lasers

    Institute of Scientific and Technical Information of China (English)

    LI Te; SUN Yan-fang; NING Yong-qiang; WANG Li-jun

    2005-01-01

    An overview of the applications of semiconductor lasers is presented. Diode lasers are widely used today,and the most prevalent use of the laser is probably in CD and DVD drives for computers and audio/video media systems. Semiconductor lasers are also used in many other fields ranging from optical fiber communications to display,medicine and pumping sources.

  9. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  10. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  11. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  12. The electronic structure of impurities in semiconductors

    CERN Multimedia

    Nylandsted larsen, A; Svane, A

    2002-01-01

    The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

  13. Cathodoluminescence and Magnetic Properties of Mn+ Implanted AIN

    Institute of Scientific and Technical Information of China (English)

    LI Ming-Kai; LI Cheng-Bin; LIU Chuan-Sheng; FAN Xiang-Jun; FU De-Jun; SHON Yun; KANG Tae-Won

    2004-01-01

    @@ The Ⅲ-Ⅴ wide band gap semiconductors show the potential in applications for dilute magnetic semiconductors.AlN films are implanted with 20-keV Mn+ ions with a dose of 5 × 1016cm-2. The cross section of as-implanted AlN are investigated by field-emission scanning electron microscopy and the energy dispersive spectra. The result confirms that the implantation depth is about 100nm. Cathodoluminescence measurements show the main peak at 2.6eV attributed to a donor-to-Mn2+ transition. It is argued that the Mn element in AlN can act as a p-type dopant peak at 2.07eV. The magnetic measurement shows a transition temperature of 100K in the implanted AlN annealed at 500℃ for 30min. Clear ferromagnetic hysteresis was observed at 77K, with a coercive field of 212.7Oe.

  14. Transverse microanalysis of high energy Ion implants

    Energy Technology Data Exchange (ETDEWEB)

    Dooley, S.P.; Jamieson, D.N.; Nugent, K.W.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.

  15. Short Implants: New Horizon in Implant Dentistry.

    Science.gov (United States)

    Jain, Neha; Gulati, Manisha; Garg, Meenu; Pathak, Chetan

    2016-09-01

    The choice of implant length is an essential factor in deciding the survival rates of these implants and the overall success of the prosthesis. Placing an implant in the posterior part of the maxilla and mandible has always been very critical due to poor bone quality and quantity. Long implants can be placed in association with complex surgical procedures such as sinus lift and bone augmentation. These techniques are associated with higher cost, increased treatment time and greater morbidity. Hence, there is need for a less invasive treatment option in areas of poor bone quantity and quality. Data related to survival rates of short implants, their design and prosthetic considerations has been compiled and structured in this manuscript with emphasis on the indications, advantages of short implants and critical biomechanical factors to be taken into consideration when choosing to place them. Studies have shown that comparable success rates can be achieved with short implants as those with long implants by decreasing the lateral forces to the prosthesis, eliminating cantilevers, increasing implant surface area and improving implant to abutment connection. Short implants can be considered as an effective treatment alternative in resorbed ridges. Short implants can be considered as a viable treatment option in atrophic ridge cases in order to avoid complex surgical procedures required to place long implants. With improvement in the implant surface geometry and surface texture, there is an increase in the bone implant contact area which provides a good primary stability during osseo-integration.

  16. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  17. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  18. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  19. Ion Implantation in Ge: Structural and electrical investigation of the induced lattice damage & Study of the lattice location of implanted impurities

    CERN Document Server

    Decoster, Stefan; Wahl, Ulrich

    The past two decades, germanium has drawn international attention as one of the most promising materials to replace silicon in semiconductor applications. Due to important advantages with respect to Si, such as the increased electron and hole mobility, Ge is well on its way to become an important material in future high-speed integrated circuits. Although the interest in this elemental group IV semiconductor is increasing rapidly nowadays, the number of publications about this material is still relatively scarce, especially when compared to Si. The most widely used technique to dope semiconductors is ion implantation, due to its good control of the dopant concentration and profile, and the isotopic purity of the implanted species. However, there is a major lack of knowledge of the fundamental properties of ion implantation in Ge, which has triggered the research presented in this thesis. One of the most important and generally unwanted properties of ion implantation is the creation of damage to the crystal la...

  20. Physics of semiconductor devices

    CERN Document Server

    Rudan, Massimo

    2015-01-01

    This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of s...

  1. Defects in semiconductor nanostructures

    Indian Academy of Sciences (India)

    Vijay A Singh; Manoj K Harbola; Praveen Pathak

    2008-02-01

    Impurities play a pivotal role in semiconductors. One part in a million of phosphorous in silicon alters the conductivity of the latter by several orders of magnitude. Indeed, the information age is possible only because of the unique role of shallow impurities in semiconductors. Although work in semiconductor nanostructures (SN) has been in progress for the past two decades, the role of impurities in them has been only sketchily studied. We outline theoretical approaches to the electronic structure of shallow impurities in SN and discuss their limitations. We find that shallow levels undergo a SHADES (SHAllow-DEep-Shallow) transition as the SN size is decreased. This occurs because of the combined effect of quantum confinement and reduced dielectric constant in SN. Level splitting is pronounced and this can perhaps be probed by ESR and ENDOR techniques. Finally, we suggest that a perusal of literature on (semiconductor) cluster calculations carried out 30 years ago would be useful.

  2. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  3. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  4. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Masaru, K.

    1984-04-20

    A semiconductor laser with enhanced characteristics is patented in which bleaching coatings are generated on the outcoupling mirrors by sputtering alternating coating layers made from A1203 and A10, with high and low indices of refraction.

  5. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  6. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  7. Cochlear Implant

    Directory of Open Access Journals (Sweden)

    Mehrnaz Karimi

    1992-04-01

    Full Text Available People with profound hearing loss are not able to use some kinds of conventional amplifiers due to the nature of their loss . In these people, hearing sense is stimulated only when the auditory nerve is activated via electrical stimulation. This stimulation is possible through cochlear implant. In fact, for the deaf people who have good mental health and can not use surgical and medical treatment and also can not benefit from air and bone conduction hearing aids, this device is used if they have normal central auditory system. The basic parts of the device included: Microphone, speech processor, transmitter, stimulator and receiver, and electrode array.

  8. Hernia Surgical Mesh Implants

    Science.gov (United States)

    ... Prosthetics Hernia Surgical Mesh Implants Hernia Surgical Mesh Implants Share Tweet Linkedin Pin it More sharing options ... majority of tissue used to produce these mesh implants are from a pig (porcine) or cow (bovine) ...

  9. Urogynecologic Surgical Mesh Implants

    Science.gov (United States)

    ... Prosthetics Urogynecologic Surgical Mesh Implants Urogynecologic Surgical Mesh Implants Share Tweet Linkedin Pin it More sharing options ... majority of tissue used to produce these mesh implants are from a pig (porcine) or cow (bovine). ...

  10. Complications after cardiac implantable electronic device implantations

    DEFF Research Database (Denmark)

    Kirkfeldt, Rikke Esberg; Johansen, Jens Brock; Nohr, Ellen Aagaard;

    2014-01-01

    Complications after cardiac implantable electronic device (CIED) treatment, including permanent pacemakers (PMs), cardiac resynchronization therapy devices with defibrillators (CRT-Ds) or without (CRT-Ps), and implantable cardioverter defibrillators (ICDs), are associated with increased patient...

  11. Semiconductor Surface Characterization Using Transverse Acoustoelectric Voltage versus Voltage Measurements.

    Science.gov (United States)

    1982-10-01

    Das, R. T. Webster and B. Davari, "SAW Characterization of Photo- Voltaic Solar Cell", Electrochemical Society Extended Abstracts, Vol. 79-1, Spring...Measurement of Carrier Generation Rate in Semiconductors", presented at the 153rd Meeting of the Electrochemical Society , Seattle, Washington, May 21-26...Ion-implanted Silicon by Surface Acoustic Waves", presented at the Electrochemical Society Meeting, May 6-11, 1979, Boston, Massachusetts. 6. P. Das, M

  12. Method of doping a semiconductor

    Science.gov (United States)

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  13. Basic Semiconductor Physics

    CERN Document Server

    Hamaguchi, Chihiro

    2010-01-01

    This book presents a detailed description of the basic semiconductor physics. The reader is assumed to have a basic command of mathematics and some elementary knowledge of solid state physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. The reader can understand three different methods of energy band calculations, empirical pseudo-potential, k.p perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for full band Monte Carlo simulation are discussed. Experiments and theoretical analysis of cyclotron resonance are discussed in detail because the results are essential to the understanding of semiconductor physics. Optical and transport properties, magneto-transport, two dimensional electron gas transport (HEMT and MOSFET), and quantum transport are reviewed, explaining optical transition, electron phonon interactions, electron mob...

  14. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  15. Beyond amorphous organic semiconductors

    Science.gov (United States)

    Hanna, Jun-ichi

    2003-07-01

    Recently it has been discovered that some types of liquid crystals, which believed to be governed by ionic conduction, exhibit a very fast electronic conduction. Their charge carrier transport is characterized by high mobility over 10-2 cm2/Vs independent of electric field and temperature. Now, the liquid crystals are being recognized as a new class of organic semiconductors. In this article, a new aspect of liquid crystals as a self-organizing molecular semiconductor are reviewed, focused on their basic charge carrier transport properties and discussed in comparison with those of molecular crystals and amorphous materials. And it is concluded that the liquid crystal is promising as a quality organic semiconductor for the devices that require a high mobility.

  16. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  17. Lattice Location of Radioactive Probes in Semiconductors and Metals by Electron and Positron Channelling

    CERN Multimedia

    2002-01-01

    The channelling effect of decay-electrons and positrons is used for the localization of radioactive impurities implanted into single crystals. Because of the low implantation doses and the variety of different isotopes available at ISOLDE, this technique is especially suited for applications in semiconducting materials. \\\\ \\\\ Channelling measurements in Si, GaAs and GaP implanted with In-, Cd- and Xe-isotopes have demonstrated that impurity lattice sites can be studied directly after implantation without any annealing. The electron-channelling technique can be ideally combined with hyperfine interaction techniques like Moessbauer s This was shown for the formation of In-vacancy complexes in ion-implanted Ni. \\\\ \\\\ We intend to continue the lattice location measurements in semiconductors implanted with various radioactive impurities of Cd, In, Sn, Sb and Te.

  18. Optical processes in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1975-01-01

    Based on a series of lectures at Berkeley, 1968-1969, this is the first book to deal comprehensively with all of the phenomena involving light in semiconductors. The author has combined, for the graduate student and researcher, a great variety of source material, journal research, and many years of experimental research, adding new insights published for the first time in this book.Coverage includes energy states in semiconductors and their perturbation by external parameters, absorption, relationships between optical constants, spectroscopy, radiative transitions, nonradiative recombination

  19. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  20. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  1. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  2. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  3. Quantum Transport in Semiconductors

    Science.gov (United States)

    1991-10-01

    SRS i 91 4. TITLE AND SUBTITLE Quantum Transport in Semiconductors 5. FUNDING NUMBER söMtos-rizk-ooss 6. AUTHOR(S) D. K. Ferry ©fte ELECTE...OF ABSTRACT UL NSN 7540-01-280-5500 O 1 9 Standard Form 298 (Rev. 2-89) Presented by ANSI Std «9-18 298-102 Final Report Quantum Transport in... Quantum Transport in Semiconductor Devices This final report describes a program of research investigating quantum effects which become important in

  4. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  5. Semiconductor surface protection material

    Science.gov (United States)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  6. Engineering magnetism in semiconductors

    Directory of Open Access Journals (Sweden)

    Tomasz Dietl

    2006-11-01

    Full Text Available Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin interactions are mediated by holes in the valence band, changing the Fermi level using co-doping, electric fields, or light can directly manipulate the magnetic ordering. Moreover, engineering the Fermi level position by co-doping makes it possible to modify solubility and self-compensation limits, affecting magnetic characteristics in a number of surprising ways. The Fermi energy can even control the aggregation of magnetic ions, providing a new route to self-organization of magnetic nanostructures in a semiconductor host.

  7. [Bilateral cochlear implantation].

    Science.gov (United States)

    Kronenberg, Jona; Migirov, Lela; Taitelbaum-Swead, Rikey; Hildesheimer, Minka

    2010-06-01

    Cochlear implant surgery became the standard of care in hearing rehabilitation of patients with severe to profound sensorineural hearing loss. This procedure may alter the lives of children and adults enabling them to integrate with the hearing population. In the past, implantation was performed only in one ear, despite the fact that binaural hearing is superior to unilateral, especially in noisy conditions. Cochlear implantation may be performed sequentially or simultaneously. The "sensitive period" of time between hearing loss and implantation and between the two implantations, when performed sequentially, significantly influences the results. Shorter time spans between implantations improve the hearing results after implantation. Hearing success after implantation is highly dependent on the rehabilitation process which includes mapping, implant adjustments and hearing training. Bilateral cochlear implantation in children is recommended as the proposed procedure in spite of the additional financial burden.

  8. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  9. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  10. Intense terahertz excitation of semiconductors

    CERN Document Server

    Ganichev, S D

    2006-01-01

    This work presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the centre of scientific activities because of the need of high-speed electronics.

  11. Biexcitons in semiconductor microcavities

    DEFF Research Database (Denmark)

    Borri, P.; Langbein, W.; Woggon, U.

    2003-01-01

    In this paper, the present status of the experimental study of the optical properties of biexcitons in semiconductor microcavities is reviewed. In particular, a detailed investigation of a polariton-biexciton transition in a high-quality single quantum well GaAs/AlGaAs microcavity is reported...

  12. Electronic structure of semiconductor-metal-semiconductor heterostructures

    Science.gov (United States)

    Masri, Pierre

    For the first time, we present in this article a microscopic self-consistent theory of the electronic structure of semiconductor-metal-semiconductor (SMS) heterostructures. This is done within the framework of a tight-binding approximation. We use a one-band model and a simplified two-band model to describe metal and semiconductor bulk bands, respectively. Results are given for a material-symmetrical and interface-assymetrical SMS structure: this involves the same semiconductors, but different interface polarities (anion- and cation-like interfaces). These results include metal-like states (built-in metal band) and metal-induced semiconductor-like states. The relevance of the charge neutrality condition to this feature and to the determination of the position of the SMS Fermi level is discussed. We also emphasize the confining role of interfaces, with respect to semiconductor-like states, within the semiconductor gap.

  13. Influence of Deuterium Treatments on the Polysilicon-Based Metal-Semiconductor-Metal Photodetector.

    Science.gov (United States)

    Lee, Jae-Sung

    2016-06-01

    The electrical behavior of metal-semiconductor-metal (MSM) Schottky barrier photodetector structure, depending on deuterium treatment, is analyzed by means of the dark current and the photocurrent measurements. Al/Ti bilayer was used as Schottky metal. The deuterium incorporation into the absorption layer, undoped polysilicon, was achieved with annealing process and with ion implantation process, respectively. In the photocurrent-to-dark current ratio measurement, deuterium-ion-implanted photodetector shows over hundred higher than the control device. It means that the heightening of the Schottky barrier and the passivation of grain boundary trap were achieved effectively through the deuterium ion implantation process.

  14. Implant success!!!.....simplified

    Directory of Open Access Journals (Sweden)

    Luthra Kaushal

    2009-01-01

    Full Text Available The endeavor towards life-like restoration has helped nurture new vistas in the art and science of implant dentistry. The protocol of "restoration-driven implant placement" ensures that the implant is an apical extension of the ideal future restoration and not the opposite. Meticulous pre-implant evaluation of soft and hard tissues, diagnostic cast and use of aesthetic wax-up and radiographic template combined with surgical template can simplify the intricate roadmap for appropriate implant treatment. By applying the harmony of artistic skill, scientific knowledge and clinical expertise, we can simply master the outstanding implant success in requisites of aesthetics, phonetics and function.

  15. Carbon doping of III-V compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Moll, Amy Jo [Univ. of California, Berkeley, CA (United States)

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 1014/cm2. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  16. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  17. Stretchable Organic Semiconductor Devices.

    Science.gov (United States)

    Qian, Yan; Zhang, Xinwen; Xie, Linghai; Qi, Dianpeng; Chandran, Bevita K; Chen, Xiaodong; Huang, Wei

    2016-11-01

    Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most stretchable devices are currently based on inorganic electronics, whose high cost of fabrication and limited processing area make it difficult to produce inexpensive, large-area devices. Therefore, organic stretchable electronics are highly attractive due to many advantages over their inorganic counterparts, such as their light weight, flexibility, low cost and large-area solution-processing, the reproducible semiconductor resources, and the easy tuning of their properties via molecular tailoring. Among them, stretchable organic semiconductor devices have become a hot and fast-growing research field, in which great advances have been made in recent years. These fantastic advances are summarized here, focusing on stretchable organic field-effect transistors, light-emitting devices, solar cells, and memory devices.

  18. Polymer semiconductor crystals

    Directory of Open Access Journals (Sweden)

    Jung Ah Lim

    2010-05-01

    Full Text Available One of the long-standing challenges in the field of polymer semiconductors is to figure out how long interpenetrating and entangled polymer chains self-assemble into single crystals from the solution phase or melt. The ability to produce these crystalline solids has fascinated scientists from a broad range of backgrounds including physicists, chemists, and engineers. Scientists are still on the hunt for determining the mechanism of crystallization in these information-rich materials. Understanding the theory and concept of crystallization of polymer semiconductors will undoubtedly transform this area from an art to an area that will host a bandwagon of scientists and engineers. In this article we describe the basic concept of crystallization and highlight some of the advances in polymer crystallization from crystals to nanocrystalline fibers.

  19. Three dimensional strained semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  20. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  1. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Semiconductors for organic transistors

    OpenAIRE

    Antonio Facchetti

    2007-01-01

    Organic molecules/polymers with a π-conjugated (hetero)aromatic backbone are capable of transporting charge and interact efficiently with light. Therefore, these systems can act as semiconductors in opto-electronic devices similar to inorganic materials. However, organic chemistry offers tools for tailoring materials' functional properties via modifications of the molecular/monomeric units, opening new possibilities for inexpensive device manufacturing. This article reviews the fundamental as...

  3. Tunable Infrared Semiconductor Lasers

    Science.gov (United States)

    2013-12-20

    Lett. 81, 406-408 (2002). [20] M. Ito and T. Kimura, “Oscillation properties of AlGaAs DH Lasrs with an external grating,” IEEE J. Quant. Elec- tron...tuning range has been demonstrated on a large area index-coupled, optically pumped mid-infrared type-II semiconductor distributed feedback (DFB) laser...lithography (IL) technique is used to pattern this chirped grating with two coherent spherical waves. A new grating fabrication optical arrangement

  4. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  5. Breast Implants: Saline vs. Silicone

    Science.gov (United States)

    ... differ in material and consistency, however. Saline breast implants Saline implants are filled with sterile salt water. ... of any age for breast reconstruction. Silicone breast implants Silicone implants are pre-filled with silicone gel — ...

  6. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

    Science.gov (United States)

    Zhao, Zhao; David Theodore, N.; Vemuri, Rajitha N. P.; Lu, Wei; Lau, S. S.; Lanz, A.; Alford, T. L.

    2013-12-01

    Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P+ implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

  7. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhao; Vemuri, Rajitha N. P.; Alford, T. L., E-mail: TA@asu.edu [School of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); David Theodore, N. [CHD-Fab, Freescale Semiconductor Inc., 1300 N. Alma School Rd., Chandler, Arizona 85224 (United States); Lu, Wei; Lau, S. S. [Department of Electrical Engineering, University of California, San Diego, California 92093 (United States); Lanz, A. [Department of Mathematics, Norfolk State University, Norfolk, Virginia 23504 (United States)

    2013-12-28

    Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P{sup +} implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

  8. Statistical 3D damage accumulation model for ion implant simulators

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Mangas, J.M. E-mail: jesman@ele.uva.es; Lazaro, J.; Enriquez, L.; Bailon, L.; Barbolla, J.; Jaraiz, M

    2003-04-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  9. Statistical 3D damage accumulation model for ion implant simulators

    CERN Document Server

    Hernandez-Mangas, J M; Enriquez, L E; Bailon, L; Barbolla, J; Jaraiz, M

    2003-01-01

    A statistical 3D damage accumulation model, based on the modified Kinchin-Pease formula, for ion implant simulation has been included in our physically based ion implantation code. It has only one fitting parameter for electronic stopping and uses 3D electron density distributions for different types of targets including compound semiconductors. Also, a statistical noise reduction mechanism based on the dose division is used. The model has been adapted to be run under parallel execution in order to speed up the calculation in 3D structures. Sequential ion implantation has been modelled including previous damage profiles. It can also simulate the implantation of molecular and cluster projectiles. Comparisons of simulated doping profiles with experimental SIMS profiles are presented. Also comparisons between simulated amorphization and experimental RBS profiles are shown. An analysis of sequential versus parallel processing is provided.

  10. Ion implantation phenomena in 4H-silicon carbide

    CERN Document Server

    Phelps, Gordon James

    2003-01-01

    Silicon Carbide is a promising wide band gap semiconductor with many new properties yet to be established and investigated. Ion implantation is the dominant method of incorporating dopant materials into the Silicon Carbide crystalline structure for electronic device fabrication. The implantation process of dopants into Silicon Carbide, both theoretical and practical, is described in this Thesis. Additional fabrication process steps, such as annealing, and their implications are also described. To gain further insight into the process of ion implantation into Silicon Carbide, the detailed design of a special test die is discussed. The aim of the special test die was to obtain general information such as implanted dopant sheet resistivity and to test a novel bipolar transistor design. The fabrication steps involved for the special test die are discussed in detail. The results from the special test die take the form of specific electrical measurements, together with detailed visual observations provided by a sca...

  11. Implantable Medical Devices

    Science.gov (United States)

    ... Artery Disease Venous Thromboembolism Aortic Aneurysm More Implantable Medical Devices Updated:Sep 16,2016 For Rhythm Control ... a Heart Attack Introduction Medications Surgical Procedures Implantable Medical Devices • Life After a Heart Attack • Heart Attack ...

  12. Urinary incontinence - collagen implants

    Science.gov (United States)

    ... gov/ency/article/007373.htm Urinary incontinence - injectable implant To use the sharing features on this page, please enable JavaScript. Injectable implants are injections of material into the urethra to ...

  13. Parametric interactions in presence of different size colloids in semiconductor quantum plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Vanshpal, R., E-mail: ravivanshpal@gmail.com; Sharma, Uttam [Shri Vaishnav Institute of Technology and Science, Indore (India); Dubey, Swati [School of Studies in Physics, Vikram University, Ujjain (M.P.) (India)

    2015-07-31

    Present work is an attempt to investigate the effect of different size colloids on parametric interaction in semiconductor quantum plasma. Inclusion of quantum effect is being done in this analysis through quantum correction term in classical hydrodynamic model of homogeneous semiconductor plasma. The effect is associated with purely quantum origin using quantum Bohm potential and quantum statistics. Colloidal size and quantum correction term modify the parametric dispersion characteristics of ion implanted semiconductor plasma medium. It is found that quantum effect on colloids is inversely proportional to their size. Moreover critical size of implanted colloids for the effective quantum correction is determined which is found to be equal to the lattice spacing of the crystal.

  14. Implantable electronic medical devices

    CERN Document Server

    Fitzpatrick, Dennis

    2014-01-01

    Implantable Electronic Medical Devices provides a thorough review of the application of implantable devices, illustrating the techniques currently being used together with overviews of the latest commercially available medical devices. This book provides an overview of the design of medical devices and is a reference on existing medical devices. The book groups devices with similar functionality into distinct chapters, looking at the latest design ideas and techniques in each area, including retinal implants, glucose biosensors, cochlear implants, pacemakers, electrical stimulation t

  15. Precision placement of heteroepitaxial semiconductor quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Hull, R.; Gray, J.L.; Kammler, M.; Vandervelde, T.; Kobayashi, T.; Kumar, P.; Pernell, T.; Bean, J.C.; Floro, J.A.; Ross, F.M

    2003-08-15

    We describe two new approaches to the patterning of Si(1 0 0) surfaces for controlled nucleation of heteroepitaxial Ge semiconductor clusters. In the first method, a Ga{sup +}-focused ion beam in situ to the growth chamber is used to create local regions of enhanced Ga{sup +} concentration and surface topography. It is shown that at low ion doses ({approx}10{sup 14} cm{sup -2}), implanted Ga causes local nucleation of Ge clusters upon the implanted region. At higher doses ({>=}10{sup 15} cm{sup -2}), a complex surface topography localizes nucleation of Ge clusters. This approach can be used to seed complex patterns of Ge clusters with diameters of tens of nanometers and positional accuracy of sub-100 nm. The second method employs self-assembly of complex strain-stabilized 'quantum quadruplet' and 'quantum fortress' structures, whereby cooperative island nucleation around shallow strain-relieving pits is identified during Ge{sub x}Si{sub 1-x}/Si(1 0 0) heteroepitaxy. These configurations are kinetically limited structures that exist over a range of compositions, growth temperatures, and growth rates, but which are destabilized by strain relaxation (e.g. by the introduction of misfit dislocations) and by growth conditions which provide high adatom surface mobilities. Both methods have broad potential application to nanoelectronic device architectures.

  16. Ion implantation of CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Wiecek Tomasz

    2017-01-01

    Full Text Available Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2. The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  17. Ion implantation of CdTe single crystals

    Science.gov (United States)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2016-12-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  18. Electrodes for Semiconductor Gas Sensors.

    Science.gov (United States)

    Lee, Sung Pil

    2017-03-25

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode-semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode-semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect.

  19. Method of passivating semiconductor surfaces

    Science.gov (United States)

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  20. Plasma immersion ion implantation. (Latest citations from the EI Compendex*plus database). Published Search

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-01-01

    The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  1. Highly Stripped Ion Sources for MeV Ion Implantation

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  2. COCHLEAR IMPLANTATION: MY EXPERIENCE

    Directory of Open Access Journals (Sweden)

    Shankar

    2015-12-01

    Full Text Available Cochlear implant is a small, surgically implanted complex electronic device that can help to provide a sense of sound to a person with severe to profound sensorineural hearing loss. This type of hearing loss, typically involves damage to hair cells in the cochlea, as a result sound cannot reach the auditory nerve which usually receives information from hair cells. A cochlear implant skips the damaged hair cells and to stimulate the auditory nerve directly. An implant does not restore normal hearing, instead it can give a deaf person a useful representation of sounds in the environment and help him or her to understand speech. I am here presenting this article in relation to the indications, intraoperative and postoperative complications of cochlear implantation in our institute since January 2013. Children who receive implants at earlier age, outperform their peers who are implanted at a later age. This is reflected in all the areas of speech and language development.

  3. Hydrogen in semiconductors

    CERN Document Server

    Pankove, Jacques I

    1991-01-01

    Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed cove

  4. Physics of Organic Semiconductors

    CERN Document Server

    Brütting, Wolfgang

    2005-01-01

    Filling the gap in the literature currently available, this book presents an overview of our knowledge of the physics behind organic semiconductor devices. Contributions from 18 international research groups cover various aspects of this field, ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in such different devices as organic field-effect transistors, photovoltaic cells and organic light-emitting diodes. From the contents:. * Excitation Dynamics in O

  5. Semiconductor microcavity polaritons

    Energy Technology Data Exchange (ETDEWEB)

    Vinogradov, Evgenii A [Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow region (Russian Federation)

    2002-12-31

    The optical properties of wide-gap semiconductor films on metal substrates were investigated experimentally by infrared spectroscopy, Raman scattering, and femtosecond spectroscopy techniques as well as theoretically in the framework of linear crystal optics. The optical spectra of such planar structures (microresonators) were shown to bear information on electromagnetic excitations of both the surface and the volume of the structure. The optical spectra are determined by the interaction of all dipole-active excitations of the component materials with the electromagnetic modes of the microresonator, which in turn are determined by the permittivities of each component material, microcavity (microresonator) thickness, and the experimental conditions. (reviews of topical problems)

  6. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  7. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  8. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  9. Implanted bottom gate for epitaxial graphene on silicon carbide

    Science.gov (United States)

    Waldmann, D.; Jobst, J.; Fromm, F.; Speck, F.; Seyller, T.; Krieger, M.; Weber, H. B.

    2012-04-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

  10. Semiconductor devices incorporating multilayer interference regions

    Science.gov (United States)

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  11. Squeezed light in semiconductors

    CERN Document Server

    Ward, M B

    2001-01-01

    Experimental evidence is presented for the generation of photon-number squeezed states of light as a result of multi-photon absorption. Photon-number squeezing as a result of non-linear absorption has long been predicted and results have been obtained utilising two very different material systems: (i) an AIGaAs waveguide in which high optical intensities can be maintained over a relatively long interaction length of 2 mm; (ii) the organic polymer p-toluene sulphonate polydiacetylene that is essentially a one-dimensional semiconductor possessing a highly nonlinear optical susceptibility. The resulting nonlinear absorption is shown to leave the transmitted light in a state that is clearly nonclassical, exhibiting photon-number fluctuations below the shot-noise limit. Tuning the laser wavelength across the half-bandgap energy has enabled a comparison between two- and three-photon processes in the semiconductor waveguide. The correlations created between different spectral components of a pulsed beam of light as ...

  12. Doped semiconductor nanocrystal junctions

    Energy Technology Data Exchange (ETDEWEB)

    Borowik, Ł.; Mélin, T., E-mail: thierry.melin@isen.iemn.univ-lille1.fr [Institut d’Electronique, de Microélectronique et de Nanotechnologie, CNRS-UMR8520, Avenue Poincaré, F-59652 Villeneuve d’Ascq (France); Nguyen-Tran, T.; Roca i Cabarrocas, P. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS-UMR7647, Ecole Polytechnique, F-91128 Palaiseau (France)

    2013-11-28

    Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (N{sub D}≈10{sup 20}−10{sup 21}cm{sup −3}) silicon nanocrystals (NCs) in the 2–50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that the charge transfer from doped NCs towards a two-dimensional layer experimentally follows a simple phenomenological law, corresponding to formation of an interface dipole linearly increasing with the NC diameter. This feature leads to analytically predictable junction properties down to quantum size regimes: NC depletion width independent of the NC size and varying as N{sub D}{sup −1/3}, and depleted charge linearly increasing with the NC diameter and varying as N{sub D}{sup 1/3}. We thus establish a “nanocrystal counterpart” of conventional semiconductor planar junctions, here however valid in regimes of strong electrostatic and quantum confinements.

  13. Hydrogen molecules in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Joerg [Technische Universitaet Dresden, 01062 Dresden (Germany)], E-mail: joerg.weber@tu-dresden.de; Hiller, Martin; Lavrov, Edward V. [Technische Universitaet Dresden, 01062 Dresden (Germany)

    2007-12-15

    Molecular hydrogen, the simplest of all molecules, allows a direct insight into the fundamental properties of quantum mechanics. In the case of H{sub 2}, the Pauli principle leads to two different species, para-H{sub 2} and ortho-H{sub 2}. A conversion between these species is prohibited. Vibrational mode spectra reflect the fundamental properties and allow an unambiguous identification of the H{sub 2} molecules. Today, we have experimental evidence for the trapping of hydrogen molecules in the semiconductors Si, Ge and GaAs at the interstitial sites, within hydrogen-induced platelets, in voids and at impurities (interstitial oxygen in Si). Interstitial H{sub 2} is a nearly free rotor with a surprisingly simple behavior. We review on interstitial H{sub 2} in semiconductors and report on the unexpected preferential disappearance of the para-H{sub 2} or ortho-D{sub 2} species. The origin of the detected ortho-para conversion will be discussed.

  14. Gating a ferromagnetic semiconductor

    Science.gov (United States)

    Bove, A.; Altomare, F.; Kundtz, N.; Chang, A. M.; Cho, Y. J.; Liu, X.; Furdyna, J.

    2007-03-01

    Ferromagnetic semiconductors have the potential of revolutionizing the way current electronic devices work: more so, because they are compatible with current fabrication lines and can easily be integrated with today's technology. Particular interest lies in III-V Diluted Magnetic Semiconductor (DMS), where the ferromagnetism is hole-mediated and the Curie temperature can therefore be tuned by changing the concentration of free carriers. In these systems, most of the effort is currently applied toward the fabrication of devices working at room-temperature: this implies high carrier density accompanied by low mobility and short mean free path. We will report our results for a ferromagnetic 2DHG system with low carrier density (˜3.4E12 cm-2) and mobility (˜ 1000 cm^2/(Vs)), and we will discuss the effects of local gating in light of possible applications to the fabrication of ferromagnetic quantum dots. T. Dietl et al., Phys. Rev. B 63, 195205 (2001). H. Ohno et al., Nature 408, 944 (2000)

  15. Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

    OpenAIRE

    Waldmann, Daniel; Jobst, Johannes; Fromm, Felix; Speck, Florian; Seyller, Thomas; Krieger, Michael; Weber, Heiko B.

    2011-01-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic...

  16. Implantes transcigomáticos Traszygomatic implants

    Directory of Open Access Journals (Sweden)

    B. Fernández Ateca

    2004-12-01

    Full Text Available Los implantes cigomáticos, originariamente diseñados por Branemark en 1989, son implantes de cabeza en 45 grados, de 4'5 milímetros de diámetro en su parte más ancha, y que pueden medir entre 30 y 50 milímetros de longitud. Se insertan desde la parte palatina del proceso alveolar, siguiendo la cresta cigomática-alveolar hasta anclarse en el cuerpo del malar, y en el caso de pacientes maxilectomizados, entrando directamente en el cuerpo del malar. Estos implantes ofrecen una alternativa más al cirujano en el momento de planificar un tratamiento protésico-rehabilitador implantosoportado. Sobretodo, en aquellos pacientes con un maxilar superior atrófico en el que no se pueden realizar injertos óseos o estos han fracasado. El objetivo de este artículo es proponer el protocolo quirúrgico de colocación de los implantes trascigomáticos y revisar la literatura actual sobre la evolución clínica de estos implantes.The zygomatic implants, originally designed by Branemark in 1989, are implants with a 45 degree inclined head, 4'5 millimetre diameter at their widest part and measuring between 30 and 50 millimetres in length. They are inserted from the palatine side of the alveolar process, following the zygomatic-alveolar edge and anchor in the body of the zygomatic bone. In the case of maxillectomized patients, they are inserted directly in the body of the malar bone. These implants offer an additional alternative to the surgeon when planning an implant supported rehabilitation treatment; specially in those patients with an atrophic maxilla in which osseous grafts cannot be realized or these grafts have failed. The objective of this article is to propose the surgical,protocol of placement of traszygomatic implants and to check the current literature on the clinical evolution of these implants.

  17. Semiconductor nanostructures in biological applications

    Energy Technology Data Exchange (ETDEWEB)

    Alexson, Dimitri [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Chen Hongfeng [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Cho, Michael [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Dutta, Mitra [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Li Yang [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Shi, Peng [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Raichura, Amit [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Ramadurai, Dinakar [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Parikh, Shaunak [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Stroscio, Michael A [Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Vasudev, Milana [Department of Bioengineering, University of Illinois at Chicago, Chicago, IL 60607 (United States)

    2005-07-06

    Semiconductor nanostructures in biological applications are discussed. Results are presented on the use of colloidal semiconductor quantum dots both as biological tags and as structures that interact with and influence biomolecules. Results are presented on the use of semiconducting carbon nanotubes in biological applications. (topical review)

  18. Variable temperature semiconductor film deposition

    Science.gov (United States)

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  19. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  20. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  1. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  2. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  3. Semiconductors for Plasmonics and Metamaterials

    CERN Document Server

    Naik, Gururaj V; 10.1002/pssr.201004269

    2011-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 um. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths.

  4. Handbook for cleaning for semiconductor manufacturing fundamentals and applications

    CERN Document Server

    Reinhardt, Karen A

    2011-01-01

    This comprehensive volume provides an in-depth discussion of the fundamentals of cleaning and surface conditioning of semiconductor applications such as high-k/metal gate cleaning, copper/low-k cleaning, high dose implant stripping, and silicon and SiGe passivation. The theory and fundamental physics associated with wet etching and wet cleaning is reviewed, plus the surface and colloidal aspects of wet processing. Formulation development practices and methodology are presented along with the applications for preventing copper corrosion, cleaning aluminum lines, and other sensitive layers. This

  5. The Biolink Implantable Telemetry System

    Science.gov (United States)

    Betancourt-Zamora, Rafael J.

    1999-01-01

    Most biotelemetry applications deal with the moderated data rates of biological signals. Few people have studied the problem of transcutaneous data transmission at the rates required by NASA's Life Sciences-Advanced BioTelemetry System (LS-ABTS). Implanted telemetry eliminate the problems associated with wire breaking the skin, and permits experiments with awake and unrestrained subjects. Our goal is to build a low-power 174-216MHz Radio Frequency (RF) transmitter suitable for short range biosensor and implantable use. The BioLink Implantable Telemetry System (BITS) is composed of three major units: an Analog Data Module (ADM), a Telemetry Transmitter Module (TTM), and a Command Receiver Module (CRM). BioLink incorporates novel low-power techniques to implement a monolithic digital RF transmitter operating at 100kbps, using quadrature phase shift keying (QPSK) modulation in the 174-216MHz ISM band. As the ADM will be specific for each application, we focused on solving the problems associated with a monolithic implementation of the TTM and CRM, and this is the emphasis of this report. A system architecture based on a Frequency-Locked Loop (FLL) Frequency Synthesizer is presented, and a novel differential frequency that eliminates the need for a frequency divider is also shown. A self sizing phase modulation scheme suitable for low power implementation was also developed. A full system-level simulation of the FLL was performed and loop filter parameters were determined. The implantable antenna has been designed, simulated and constructed. An implant package compatible with the ABTS requirements is also being proposed. Extensive work performed at 200MHz in 0.5um complementary metal oxide semiconductors (CMOS) showed the feasibility of integrating the RF transmitter circuits in a single chip. The Hajimiri phase noise model was used to optimize the Voltage Controlled Oscillator (VCO) for minimum power consumption. Two test chips were fabricated in a 0.5pm, 3V CMOS

  6. Moessbauer-spectroscopic study of structure and magnetism of the exchange-coupled layer systems Fe/FeSn{sub 2}, and Fe/FeSi/Si and the ion-implanted diluted magnetic semiconductor SiC(Fe); Moessbauerspektroskopische Untersuchung von Struktur und Magnetismus der austauschgekoppelten Schichtsysteme Fe/FeSn{sub 2} und Fe/FeSi/Si und des ionenimplantierten verduennten magnetischen Halbleiters SiC(Fe)

    Energy Technology Data Exchange (ETDEWEB)

    Stromberg, Frank

    2009-07-07

    In line with this work the structural and magnetic properties of the exchange coupled layered systems Fe/FeSn{sub 2} and Fe/FeSi/Si and of the Fe ion implanted diluted magnetic semiconductor (DMS) SiC(Fe) were investigated. The main measuring method was the isotope selective {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS), mostly in connection with the {sup 57}Fe tracer layer technique, in a temperature range from 4.2 K to 340 K. Further measurement techniques were X-ray diffraction (XRD), electron diffraction (LEED, RHEED), SQUID magnetometry and FMR (Ferromagnetic Resonance). In the first part of this work the properties of thin AF FeSn{sub 2}(001) films and of the exchange-bias system Fe/FeSn{sub 2}(001) on InSb(001) were investigated. With the application of {sup 57}Fe-tracer layers and CEMS both the Fe-spin structure and the temperature dependence of the magnetic hyperfine field (B{sub hf}) of FeSn{sub 2} could be examined. The evaporation of Fe films on the FeSn{sub 2} films produced in the latter ones a high perpendicular spin component at the Fe/FeSn{sub 2} interface. In some distance from the interface the Fe spins rotate back into the sample plane. Furthermore {sup 57}Fe-CEMS provided a correlation between the absolute value of the exchange field vertical stroke He vertical stroke and the amount of magnetic defects within the FeSn{sub 2}. Temperature dependent CEMS-measurements yielded informations about the spin dynamics within the AF. The transition temperatures T{sub B}{sup *}, which were interpreted as superparamagnetic blocking temperatures, obtain higher values compared to the temperatures T{sub B} of the exchange-bias effect, obtained with magnetometry measurements. The second part of this work deals with the indirect exchange coupling within Fe/FeSi/Si/FeSi/Fe multilayers and FeSi diffusion barriers. The goal was to achieve Fe free Si interlayers. The CEMS results show that starting from a thickness of t{sub FeSi}=10-12 A of the

  7. Implant treatment planning considerations.

    Science.gov (United States)

    Kao, Richard T

    2008-04-01

    As dental implants become a more accepted treatment modality, there is a need for all parties involved with implant dentistry to be familiar with various treatment planning issues. Though the success can be highly rewarding, failure to forecast treatment planning issues can result in an increase of surgical needs, surgical cost, and even case failure. In this issue, the focus is on implant treatment planning considerations.

  8. Implants in adolescents.

    Science.gov (United States)

    Shah, Rohit A; Mitra, Dipika K; Rodrigues, Silvia V; Pathare, Pragalbha N; Podar, Rajesh S; Vijayakar, Harshad N

    2013-07-01

    Implants have gained tremendous popularity as a treatment modality for replacement of missing teeth in adults. There is extensive research present on the use of implants in adults, but there is a dearth of data available on the same in adolescents. The treatment planning and execution of implant placement in adolescents is still in its infancy. This review article is an attempt to bring together available literature.

  9. Implants in adolescents

    Directory of Open Access Journals (Sweden)

    Rohit A Shah

    2013-01-01

    Full Text Available Implants have gained tremendous popularity as a treatment modality for replacement of missing teeth in adults. There is extensive research present on the use of implants in adults, but there is a dearth of data available on the same in adolescents. The treatment planning and execution of implant placement in adolescents is still in its infancy. This review article is an attempt to bring together available literature.

  10. Semiconductor nanowire lasers

    Science.gov (United States)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  11. Semiconductor adiabatic qubits

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib

    2016-12-27

    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  12. A semiconductor based electrode

    Energy Technology Data Exchange (ETDEWEB)

    Khamatani, A.; Kobayasi, K.

    1983-03-30

    The semiconductor electrode is submerged into an electrolyte which is held in the illuminated chamber. The other electrode is placed in a dark chamber connected with the channel to be illuminated, which has a partition in the form of a membrane. An electric current flows in the external circuit of the element with illumination of the first electrode. The illuminated electrode is covered with a thin film of a substance which is stable with the action of the electrolyte. The film is made of Si02, A1203, GaN or A1N. The protective coating makes it possible to use materials less stable than Ti02 in a rutile modification, but which have higher characteristics than the GaP, GaAs, CdS and InP, for making the electrode.

  13. Ion implantation technology

    CERN Document Server

    Downey, DF; Jones, KS; Ryding, G

    1993-01-01

    Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approach

  14. HA-Coated Implant

    DEFF Research Database (Denmark)

    Daugaard, Henrik; Søballe, Kjeld; Bechtold, Joan E

    2014-01-01

    The goal of osseointegration of orthopedic and dental implants is the rapid achievement of a mechanically stable and long lasting fixation between living bone and the implant surface. In total joint replacements of cementless designs, coatings of calcium phosphates were introduced as a means...... of improving the fixation of implants. Of these, hydroxyapatite (HA) is the most widely used and most extensively investigated. HA is highly osseoconductive, and the positive effect is well documented in both basic and long-term clinical research [1–6]. This chapter describes experimental and clinical studies...... evaluating bone-implant fixation with HA coatings....

  15. Development of vertical compact ion implanter for gemstones applications

    Energy Technology Data Exchange (ETDEWEB)

    Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Wijaikhum, A. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science (Gems and Jewelry), Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D.; Tippawan, U.; Yu, L.D.; Singkarat, S. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2014-08-15

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  16. Development of vertical compact ion implanter for gemstones applications

    Science.gov (United States)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  17. Incorporation of oxygen in SiC implanted with hydrogen

    Science.gov (United States)

    Barcz, A.; Jakieła, R.; Kozubal, M.; Dyczewski, J.; Celler, G. K.

    2015-12-01

    Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H-SiC. In this study H+ or 2H+ implantation was carried out at energies E, from 200 keV to 1 MeV, to fluences D, ranging from 2 × 1016/cm2 to 1 × 1017/cm2. For comparison, the implantation was also done into float-zone (FZ) and Czochralski (CZ) silicon wafers. Post-implantation annealing at temperatures from 400 °C to 1150 °C was performed either in pure argon or in a water vapor. Characterization methods included SIMS, RBS and TEM. At sufficiently high doses, hydrogen implantation into semiconductors leads to the irreversible formation of a planar zone of microcavities, bubbles and other extended defects located at the maximum of deposited energy. This kind of highly perturbed layer, containing large amounts of agglomerated hydrogen is known to efficiently getter a number of impurities. Oxygen was detected in both CZ and FZ silicon subjected to Smart-Cut™ processing. We have identified, by SIMS profiling, a considerable oxygen peak situated at the interface between the SiC substrate and a layer implanted with 1 × 1017 H ions/cm2 and heated to 1150 °C in either H2O vapor or in a nominally pure Ar. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, the objective of the present study was to identify the source and possible transport mechanism of oxygen species to the cavity band. Through the analysis of several implants annealed at various conditions, we conclude that, besides diffusion from the bulk or from surface oxides, an alternative path for oxygen agglomeration is migration of gaseous O2 or H2O from the edge of the sample through the porous layer.

  18. Evolution of secondary defects in arsenic implanted Si

    Science.gov (United States)

    Zhu, He; Wang, Miao; Zhang, Bingpo; Wu, Huizhen; Sun, Yan; Hu, Gujin; Dai, Ning

    2016-04-01

    Behavior of defects in ion-implanted semiconductors is an everlasting topic and becomes even more critical as semiconductor devices continuously shrink and ion implantation technique has been increasingly employed. High resolution transmission electron microscope (HRTEM) and energy dispersive X-ray (EDX) were employed to investigate the structural evolution of arsenic (As) implanted silicon (Si). Project range (PR) defects and end of range (EOR) dislocations are observed via HRTEM. EDX characterization proves the two types of defects are related to dopant atoms precipitations. The sizes of both PR defects and EOR dislocations enlarge at the expense of small ones with the elevation of annealing temperature. The characterizations of electrochemical capacitance-voltage and EDX conclude that the SiO2/Si interface is playing an indispensable role in the deactivation of dopant atoms during the annealing process. As atoms are detected in the As-implanted Si region near the SiO2/Si interface but not in the silica layer. Nanoparticles composed of Si atoms in the silica layer are observed in the 1150 °C-annealed samples, which proves the migration of oxygen atoms at the SiO2/Si interface.

  19. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  20. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    Science.gov (United States)

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  1. Management of peri-implantitis

    OpenAIRE

    Jayachandran Prathapachandran; Neethu Suresh

    2012-01-01

    Peri-implantitis is a site-specific infectious disease that causes an inflammatory process in soft tissues, and bone loss around an osseointegrated implant in function. The etiology of the implant infection is conditioned by the status of the tissue surrounding the implant, implant design, degree of roughness, external morphology, and excessive mechanical load. The microorganisms most commonly associated with implant failure are spirochetes and mobile forms of Gram-negative anaerobes, unless ...

  2. Delayed breast implant reconstruction

    DEFF Research Database (Denmark)

    Hvilsom, Gitte B.; Hölmich, Lisbet R.; Steding-Jessen, Marianne;

    2012-01-01

    We evaluated the association between radiation therapy and severe capsular contracture or reoperation after 717 delayed breast implant reconstruction procedures (288 1- and 429 2-stage procedures) identified in the prospective database of the Danish Registry for Plastic Surgery of the Breast during...... reconstruction approaches other than implants should be seriously considered among women who have received radiation therapy....

  3. Ion Implantation of Polymers

    DEFF Research Database (Denmark)

    Popok, Vladimir

    2012-01-01

    are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are considered. Specificity of depth distributions of implanted into polymers impurities is analysed and the case of high-fluence implantation is emphasised. Within rather broad topic of ion bombardment, the focus...

  4. (n,p) emission channeling measurements on ion-implanted beryllium

    CERN Multimedia

    Jakubek, J; Uher, J

    2007-01-01

    We propose to perform emission-channeling measurements using thermal neutron induced proton emission from ion-implanted $^{7}$Be. The physics questions addressed concern the beryllium doping of III-V and II-VI semiconductors and the host dependence of the electron capture half-life of $^{7}$Be.

  5. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  6. Semiconductor nanoparticles for quantum devices

    Science.gov (United States)

    Erokhin, Victor; Carrara, Sandro; Amenitch, H.; Bernstorff, S.; Nicolini, Claudio

    1998-09-01

    Semiconductor nanoparticles were synthesized by exposing fatty acid salt Langmuir-Blodgett films to the atmosphere of 0957-4484/9/3/004/img8. The particle sizes were characterized by small-angle x-ray scattering of their solutions using synchrotron radiation source at higher resolution, as it was impossible previously to study it with usual laboratory x-ray sources. The particle sizes were found to correspond with the demands of single-electron and quantum junctions. Semiconductor heterostructures were grown by self-aggregation of these particles of different types. Electrical properties of these nanostructures were studied by using STM. Voltage-current characteristics revealed the presence of differential negative resistance. Measurements confirmed the formation of semiconductor superlattices directed towards a development of new nanodevices, such as tunnelling diodes and semiconductor lasers.

  7. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  8. MUSIC AND COCHLEAR IMPLANTS

    Institute of Scientific and Technical Information of China (English)

    Mao Yitao; Xu Li

    2013-01-01

    Currently, most people with modern multichannel cochlear implant systems can understand speech in qui-et environment very well. However, studies in recent decades reported a lack of satisfaction in music percep-tion with cochlear implants. This article reviews the literature on music ability of cochlear implant users by presenting a systematic outline of the capabilities and limitations of cochlear implant recipients with regard to their music perception as well as production. The review also evaluates the similarities and differences be-tween electric hearing and acoustic hearing regarding music perception. We summarize the research results in terms of the individual components of music (e.g., rhythm, pitch, and timbre). Finally, we briefly intro-duce the vocal singing of prelingually-deafened children with cochlear implants as evaluated by acoustic measures.

  9. Semiconductor packaging materials interaction and reliability

    CERN Document Server

    Chen, Andrea

    2012-01-01

    In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. The book focuses on an important step in semiconductor manufacturing--package assembly and testing. It covers the basics of material properties and explains how to determine which behaviors are important to package performance. The authors also discuss how

  10. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  11. Fractal properties of nanostructured semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Zhanabaev, Z.Zh. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan); Grevtseva, T.Yu. [Al-Farabi Khazakh National University, Tole bi Street, 96, Almaty 050012 (Kazakhstan)]. E-mail: kenwp@mail.ru

    2007-03-15

    A theory for the temperature and time dependence of current carrier concentration in semiconductors with different non-equilibrium nanocluster structure has been developed. It was shown that the scale-invariant fractal self-similar and self-affine laws can exist near by the transition point to the equilibrium state. Results of the theory have been compared to the experimental data from electrical properties of semiconductor films with nanoclusters.

  12. Seebeck effect in polycrystalline semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Jerhot, J.; Vlcek, J.

    1982-06-18

    The paper deals with the interpretation of the Seebeck coefficient measured for a polycrystalline semiconductor. Polycrystalline semiconductors are considered to be composed of grains separated from one another by intergrain domains. An isotype heterojunction with a certain density of interface states is assumed to exist at the grain-intergrain domain interface. The general formula for the Seebeck coefficient under these conditions is derived. The relations valid for systems of practical interest are shown as limiting cases of the formula presented.

  13. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  14. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.

    1984-03-27

    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  15. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  16. Survey of cryogenic semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  17. A semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Naoko, O.; Khiroiti, S.

    1984-05-20

    An improved method is patented for increasing the service life of semiconductor lasers which does not hinder their characteristics, by applying a protective film to the end planes of the optical resonator of the laser. It is recommended that a mixture of an A1203 dielectric and an inert element such as argon be used for a GaAs, GaA1As laser as the protective film. The radii of gallium and arsenic atoms are equal to 1.24 and 1.25 angstroms, respectively. The radii of A1, O and Si atoms which make up the protective film are equal to 1.43, .61 and 1.17 angstroms, respectively. The radius of the argon atoms in the protective film, which is equal to 1.91 angstroms) is high compared to the atoms noted above. As a result, the movement of the gallium and arsenic atoms, which causes a drop in later characteristics during operation, is made more difficult.

  18. Benefits and Risks of Cochlear Implants

    Science.gov (United States)

    ... Prosthetics Cochlear Implants Benefits and Risks of Cochlear Implants Share Tweet Linkedin Pin it More sharing options ... Cochlear Implants What are the Benefits of Cochlear Implants? For people with implants: Hearing ranges from near ...

  19. EDITORIAL: Oxide semiconductors

    Science.gov (United States)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  20. Heavy ion time-of-flight ERDA of high dose metal implanted germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dytlewski, N.; Evans, P.J.; Noorman, J.T. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Wielunski, L.S. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics; Bunder, J. [New South Wales Univ., Wollongong, NSW (Australia). Wollongong Univ. Coll

    1996-12-31

    With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.

  1. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Science.gov (United States)

    2010-08-13

    ... Employment and Training Administration Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical Information Center, Woburn, MA; Amended Certification Regarding... Semiconductor, Inc., Technical Information Center, Tempe, Arizona. The notice was published in the...

  2. Dental Implant Systems

    Directory of Open Access Journals (Sweden)

    Yoshiki Oshida

    2010-04-01

    Full Text Available Among various dental materials and their successful applications, a dental implant is a good example of the integrated system of science and technology involved in multiple disciplines including surface chemistry and physics, biomechanics, from macro-scale to nano-scale manufacturing technologies and surface engineering. As many other dental materials and devices, there are crucial requirements taken upon on dental implants systems, since surface of dental implants is directly in contact with vital hard/soft tissue and is subjected to chemical as well as mechanical bio-environments. Such requirements should, at least, include biological compatibility, mechanical compatibility, and morphological compatibility to surrounding vital tissues. In this review, based on carefully selected about 500 published articles, these requirements plus MRI compatibility are firstly reviewed, followed by surface texturing methods in details. Normally dental implants are placed to lost tooth/teeth location(s in adult patients whose skeleton and bony growth have already completed. However, there are some controversial issues for placing dental implants in growing patients. This point has been, in most of dental articles, overlooked. This review, therefore, throws a deliberate sight on this point. Concluding this review, we are proposing a novel implant system that integrates materials science and up-dated surface technology to improve dental implant systems exhibiting bio- and mechano-functionalities.

  3. Nanotechnology for dental implants.

    Science.gov (United States)

    Tomsia, Antoni P; Lee, Janice S; Wegst, Ulrike G K; Saiz, Eduardo

    2013-01-01

    With the advent of nanotechnology, an opportunity exists for the engineering of new dental implant materials. Metallic dental implants have been successfully used for decades, but they have shortcomings related to osseointegration and mechanical properties that do not match those of bone. Absent the development of an entirely new class of materials, faster osseointegration of currently available dental implants can be accomplished by various surface modifications. To date, there is no consensus regarding the preferred method(s) of implant surface modification, and further development will be required before the ideal implant surface can be created, let alone become available for clinical use. Current approaches can generally be categorized into three areas: ceramic coatings, surface functionalization, and patterning on the micro- to nanoscale. The distinctions among these are imprecise, as some or all of these approaches can be combined to improve in vivo implant performance. These surface improvements have resulted in durable implants with a high percentage of success and long-term function. Nanotechnology has provided another set of opportunities for the manipulation of implant surfaces in its capacity to mimic the surface topography formed by extracellular matrix components of natural tissue. The possibilities introduced by nanotechnology now permit the tailoring of implant chemistry and structure with an unprecedented degree of control. For the first time, tools are available that can be used to manipulate the physicochemical environment and monitor key cellular events at the molecular level. These new tools and capabilities will result in faster bone formation, reduced healing time, and rapid recovery to function.

  4. Wide-Bandgap Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  5. Delayed breast implant reconstruction

    DEFF Research Database (Denmark)

    Hvilsom, Gitte B.; Hölmich, Lisbet R.; Steding-Jessen, Marianne;

    2011-01-01

    the period 1999 to 2006; 239 one-stage procedures and 353 two-stage procedures. The postoperative course through November 2009 was evaluated by cumulative incidence adjusting for competing risks for the selected outcomes; hematoma, infection, seroma, implant rupture, severe capsular contracture (modified.......7% for severe capsular contracture, 32.3% for displacement/asymmetry of the implant and 38.6% for reoperation. When comparing one- and two-stage procedures, we observed significantly higher risk estimates for infection, seroma and extrusion of the implant following two-stage procedures, whereas the risk...

  6. Bioceramics for implant coatings

    Directory of Open Access Journals (Sweden)

    Allison A Campbell

    2003-11-01

    Early research in this field focused on understanding the biomechanical properties of metal implants, but recent work has turned toward improving the biological properties of these devices. This has led to the introduction of calcium phosphate (CaP bioceramics as a bioactive interface between the bulk metal impart and the surrounding tissue. The first CaP coatings were produced via vapor phase processes, but more recently solution-based and biomimetic methods have emerged. While each approach has its own intrinsic materials and biological properties, in general CaP coatings promise to improve implant biocompatibility and ultimately implant longevity.

  7. Biomedical implantable microelectronics.

    Science.gov (United States)

    Meindl, J D

    1980-10-17

    Innovative applications of microelectronics in new biomedical implantable instruments offer a singular opportunity for advances in medical research and practice because of two salient factors: (i) beyond all other types of biomedical instruments, implants exploit fully the inherent technical advantages--complex functional capability, high reliability, lower power drain, small size and weight-of microelectronics, and (ii) implants bring microelectronics into intimate association with biological systems. The combination of these two factors enables otherwise impossible new experiments to be conducted and new paostheses developed that will improve the quality of human life.

  8. Dielectric screening in semiconductors

    Science.gov (United States)

    Harrison, Walter A.; Klepeis, John E.

    1988-01-01

    Intra-atomic and interatomic Coulomb interactions are incorporated into bond-orbital theory, based upon universal tight-binding parameters, in order to treat the effects of charge redistribution in semiconductor bonds. The dielectric function ɛ(q) is obtained for wave numbers in a [100] direction. The screening of differences in average hybrid energy across a heterojunction is calculated in detail, indicating that the decay length for the potential depends upon the relative values of Madelung and intra-atomic Coulomb terms. The parameters used here predict an imaginary decay length and thus an oscillating potential near the interface. The same theory is applied to point defects by imbedding a cluster in a matrix lattice, taking charges in that lattice to be consistent with continuum theory. Illustrating the theory with a phosphorus impurity in silicon, it is seen that the impurity and its neighboring atoms have charges on the order of only one-tenth of an electronic charge, alternating in sign from neighbor to neighbor as for planar defects. Although there are shifts in the term values on the order of a volt, the difference in these shifts for neighboring atoms is much smaller so that the effect on the bonds is quite small. This behavior is analogous to the response of a dielectric continuum to a point charge: The medium is locally neutral except at the center of the cluster and there are slowly varying potentials e2/ɛr. Because of this slow variation, free-atom term values should ordinarily suffice for the calculation of bond properties and bond lengths at impurities. Corrections are larger for homovalent substitutions such as carbon in silicon.

  9. Discrimination of defects in III-V semiconductors by positron lifetime distribution

    CERN Document Server

    Chen, Z Q; Wang, S J

    2000-01-01

    In this paper, the numerical Laplace inversion technique and maximum entropy method are utilized to extract continuous positron lifetime distribution in semiconductors. The result is used to discriminate the native vacancy-type defects in as-grown GaAs and In P with different conduction type. Direct evidence of shallow positron traps were also observed in ion-implanted p-In P. It is demonstrated that the lifetime distribution can give us more detailed information on the native defects.

  10. Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit

    Science.gov (United States)

    Kim, Jeehwan; Bedell, Stephen W.; Sadana, Devendra K.

    2012-09-01

    Full activation of n-type dopant in germanium (Ge) reaching to its solid solubility has never been achieved by using ion implantation doping technique. This is because implantation of dopants always leaves defects such as vacancy and interstitials in the Ge crystal. While implantation-induced defects are electrically neutral for the most of semiconductor materials, they are electrically positive for Ge resulting in compensation of n-type dopants. In this Letter, we verified that 5 × 1019 P/cm3 is the maximum active concentration, which can be fully activated in germanium "without leaving implantation damage" per implantation/annealing cycle. The repetition of implantation and annealing of phosphorous (P) with the concentration of 5 × 1019 cm-3 leads to the activation of 1 × 1020 P/cm3 close to its solid solubility limit of 2 × 1020 P/cm3.

  11. Dealing with dental implant failures

    Directory of Open Access Journals (Sweden)

    Liran Levin

    2008-06-01

    Full Text Available An implant-supported restoration offers a predictable treatment for tooth replacement. Reported success rates for dental implants are high. Nevertheless, failures that mandate immediate implant removal do occur. The consequences of implant removal jeopardize the clinician's efforts to accomplish satisfactory function and esthetics. For the patient, this usually involves further cost and additional procedures. The aim of this paper is to describe different methods and treatment modalities to deal with dental implant failure. The main topics for discussion include identifying the failing implant, implants replacing failed implants at the exact site, and the use of other restorative options.When an implant fails, a tailor made treatment plan should be provided to each patient according to all relevant variables. Patients should be informed regarding all possible treatment modalities following implant failure and give their consent to the most appropriate treatment option for them.

  12. Semiconductors for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Moeller, H.J. (Case Western Reserve Univ., Cleveland, OH (United States). Dept. of Materials Science and Engineering)

    1991-01-01

    This review covers the historical background of the solar cell development, the physical principles of photovoltaic energy conversion, technology of solar cell devices and the structural and physical properties of lattice defects in semiconductors. Single crystal and polycrystalline silicon, single crystal and epitaxial gallium arsenide, polycrystalline thin films and amorphous thin films are discussed in detail. Semiconductors have emerged as the most promising group of materials which can convert sunlight directly into electrical energy. They utilize the fundamental physical process that a photon that penetrates into the semiconductor and is absorbed can generate electron-hole pairs. Because of their opposite charges they can be separated by an internal electrical field and collected at two contacts thus giving rise to a voltage and photocurrent if the two contacts are connected externally. In semiconductors internal electric fields occur in connection with space charges at junctions and a variety of technological concepts are used to produce a built-in voltage. The most widely used device principle is the operation of a solar cell as a diode or p-n junction. Alternative concepts are heterojunction devices where the materials on either side of the junction are different semiconductors. (author).

  13. MEMS biomedical implants

    Institute of Scientific and Technical Information of China (English)

    Tai Yuchong

    2012-01-01

    The field of micro-electro-mechanical systems (MEMS) has advanced tremendously for the last 20 years. Most commercially noticeably, the field has successfully advanced from pressure sensors to micro physical sensors, such as accelerometers and gyros, for handheld electronics application. In parallel, MEMS has also advanced into micro total analysis system(TAS) and/or lab-on-a-chip applications. This article would discuss a relatively new but promising future direction towards MEMS biomedical implants. Specifically, Parylene C has been explored to be used as a good MEMS implant material and will be discussed in detail. Demonstrated implant devices, such as retinal and spinal cord implants, are presented in this article.

  14. Superelastic Orthopedic Implant Coatings

    Science.gov (United States)

    Fournier, Eric; Devaney, Robert; Palmer, Matthew; Kramer, Joshua; El Khaja, Ragheb; Fonte, Matthew

    2014-07-01

    The demand for hip and knee replacement surgery is substantial and growing. Unfortunately, most joint replacement surgeries will fail within 10-25 years, thereby requiring an arduous, painful, and expensive revision surgery. To address this issue, a novel orthopedic implant coating material ("eXalt") has been developed. eXalt is comprised of super elastic nitinol wire that is knit into a three-dimensional spacer fabric structure. eXalt expands in vivo to conform to the implantation site and is porous to allow for bone ingrowth. The safety and efficacy of eXalt were evaluated through structural analysis, mechanical testing, and a rabbit implantation model. The results demonstrate that eXalt meets or exceeds the performance of current coating technologies with reduced micromotion, improved osseointegration, and stronger implant fixation in vivo.

  15. Risks of Breast Implants

    Science.gov (United States)

    ... an infection or injury. Demonstrated by redness, swelling, warmth, pain and or/loss of function. Lymphedema or ... Overfilling or underfilling of saline-filled breast implants Physical stresses such as trauma or intense physical pressure ...

  16. Cochlear Implant in Adults

    Directory of Open Access Journals (Sweden)

    Jaleh Samadi

    2003-09-01

    Full Text Available Cochlear implant is the result of a great combination and collaboration of engineering and medicine. It is mainly because it has the most conflict with the human nervous system among all prosthesis. Cochlear implant helps a child with profound hearing loss to understand and articulate speech and let an adult person with hearing loss communicate with people by phone. Although these wonderful results could not be seen in all patients, will let us know about the great scientific findings.

  17. Contraceptive implants: current perspectives

    Directory of Open Access Journals (Sweden)

    Rowlands S

    2014-09-01

    Full Text Available Sam Rowlands,1,2 Stephen Searle3 1Centre of Postgraduate Medical Research and Education, School of Health and Social Care, Bournemouth University, Bournemouth, United Kingdom; 2Dorset HealthCare, Bournemouth, United Kingdom; 3Sexual Health Services, Chesterfield, United KingdomAbstract: Progestin-only contraceptive implants are a highly cost-effective form of long-acting reversible contraception. They are the most effective reversible contraceptives and are of a similar effectiveness to sterilization. Pregnancies are rare in women using this method of contraception, and those that do occur must be fully investigated, with an ultrasound scan of the arm and serum etonogestrel level if the implant cannot be located. There are very few contraindications to use of implants, and they have an excellent safety profile. Both acceptability and continuation with the method are high. Noncontraceptive benefits include improvements in dysmenorrhea, ovulatory pain, and endometriosis. Problematic bleeding is a relatively common adverse effect that must be covered in preinsertion information-giving and supported adequately if it occurs. Recognized training for both insertion and removal should be undertaken. Care needs to be taken at both insertion and removal to avoid neurovascular injury. Implants should always be palpable; if they are not, noninsertion should be assumed until disproven. Etonogestrel implants are now radiopaque, which aids localization. Anticipated difficult removals should be performed by specially trained experts. Keywords: contraceptive, subdermal implant, etonogestrel, levonorgestrel, progestin-only, long-acting reversible contraception

  18. Biomaterials in cochlear implants

    Directory of Open Access Journals (Sweden)

    Lenarz, Thomas

    2009-01-01

    Full Text Available The cochlear implant (CI represents, for almost 25 years now, the gold standard in the treatment of children born deaf and for postlingually deafened adults. These devices thus constitute the greatest success story in the field of ‘neurobionic’ prostheses. Their (now routine fitting in adults, and especially in young children and even babies, places exacting demands on these implants, particularly with regard to the biocompatibility of a CI’s surface components. Furthermore, certain parts of the implant face considerable mechanical challenges, such as the need for the electrode array to be flexible and resistant to breakage, and for the implant casing to be able to withstand external forces. As these implants are in the immediate vicinity of the middle-ear mucosa and of the junction to the perilymph of the cochlea, the risk exists – at least in principle – that bacteria may spread along the electrode array into the cochlea. The wide-ranging requirements made of the CI in terms of biocompatibility and the electrode mechanism mean that there is still further scope – despite the fact that CIs are already technically highly sophisticated – for ongoing improvements to the properties of these implants and their constituent materials, thus enhancing the effectiveness of these devices. This paper will therefore discuss fundamental material aspects of CIs as well as the potential for their future development.

  19. Biocompatible implant surface treatments.

    Science.gov (United States)

    Pattanaik, Bikash; Pawar, Sudhir; Pattanaik, Seema

    2012-01-01

    Surface plays a crucial role in biological interactions. Surface treatments have been applied to metallic biomaterials in order to improve their wear properties, corrosion resistance, and biocompatibility. A systematic review was performed on studies investigating the effects of implant surface treatments on biocompatibility. We searched the literature using PubMed, electronic databases from 1990 to 2009. Key words such as implant surface topography, surface roughness, surface treatment, surface characteristics, and surface coatings were used. The search was restricted to English language articles published from 1990 to December 2009. Additionally, a manual search in the major dental implant journals was performed. When considering studies, clinical studies were preferred followed by histological human studies, animal studies, and in vitro studies. A total of 115 articles were selected after elimination: clinical studies, 24; human histomorphometric studies, 11; animal histomorphometric studies, 46; in vitro studies, 34. The following observations were made in this review: · The focus has shifted from surface roughness to surface chemistry and a combination of chemical manipulations on the porous structure. More investigations are done regarding surface coatings. · Bone response to almost all the surface treatments was favorable. · Future trend is focused on the development of osteogenic implant surfaces. Limitation of this study is that we tried to give a broader overview related to implant surface treatments. It does not give any conclusion regarding the best biocompatible implant surface treatment investigated till date. Unfortunately, the eventually selected studies were too heterogeneous for inference of data.

  20. Closing photoconductive semiconductor switches

    Energy Technology Data Exchange (ETDEWEB)

    Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, H.P.; O' Malley, M.W.

    1989-01-01

    One of the most important limitations of Photoconductive Semiconductor Switches (PCSS) for pulsed power applications is the high laser powers required to activate the switches. In this paper, we discuss recent developments on two different aspects of GaAs PCSS that result in reductions in laser power by a factor of nearly 1000. The advantages of using GaAs over Si are many. First of all, the resistivity of GaAs can be orders of magnitude higher than that of the highest resistivity Si material, thus allowing GaAs switches to withstand dc voltages without thermal runaway. Secondly, GaAs has a higher carrier mobility than Si and, thus, is more efficient (per carrier). Finally, GaAs switches can have naturally fast (ns) opening times at room temperature and low fields, microsecond opening times at liquid nitrogen temperature of 77 K, or, on demand, closing and opening at high fields and room temperature by a mechanism called lock-on (see Ref. 1). By contrast, Si switches typically opening times of milliseconds. The amount of laser light required to trigger GaAs for lock-on, or at 77 K, is about three orders of magnitude lower than at room temperature. In this paper we describe the study of lock-on in GaAs and InP, as well as switching of GaAs at 77 K. We shall show that when GaAs is switched at 77 K, the carrier lifetime is about three orders of magnitude longer than it is at room temperature. We shall explain the change in lifetime in terms of the change in electron capture cross section of the deep levels in GaAs (these are defect or impurity levels in the band gap). In the second section, we describe the lock-on effect, now seen in GaAs and InP, and at fields as high as 70 kV/cm. We show how lock-on can be tailored by changing the GaAs temperature or by neutron bombardment. In the third section, we discuss possible lock-on mechanisms. 5 refs., 5 figs.

  1. Broadband fast semiconductor saturable absorber.

    Science.gov (United States)

    Jacobovitz-Veselka, G R; Kellerm, U; Asom, T

    1992-12-15

    Kerr lens mode-locked (KLM) solid-state lasers are typically not self-starting. We address this problem by introducing a broadband semiconductor saturable absorber that could be used as a tunable, all-solid-state, passive starting mechanism. We extend the wavelength tunability of a semiconductor saturable absorber to more than 100 nm using a band-gap-engineered low-temperature molecular-beam-epitaxy (MBE)-grown bulk AlGaAs semiconductor saturable absorber in which the absorption edge of the saturable absorber has been artificially broadened by continuously reducing the Al concentration during the MBE growth. We demonstrate its tunability and its feasibility as a starting mechanism for KLM with a picosecond resonant passive mode-locked Ti:sapphire laser. The extension to femtosecond KLM lasers has been discussed previously.

  2. Organic Semiconductors and its Applications

    Science.gov (United States)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  3. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  4. Exciton Transport in Organic Semiconductors

    Science.gov (United States)

    Menke, Stephen Matthew

    Photovoltaic cells based on organic semiconductors are attractive for their use as a renewable energy source owing to their abundant feedstock and compatibility with low-cost coating techniques on flexible substrates. In contrast to photovoltaic cells based traditional inorganic semiconductors, photon absorption in an organic semiconductor results in the formation of a coulombically bound electron-hole pair, or exciton. The transport of excitons, consequently, is of critical importance as excitons mediate the interaction between charge and light in organic photovoltaic cells (OPVs). In this dissertation, a strong connection between the fundamental photophysical parameters that control nanoscopic exciton energy transfer and the mesoscopic exciton transport is established. With this connection in place, strategies for enhancing the typically short length scale for exciton diffusion (L D) can be developed. Dilution of the organic semiconductor boron subphthalocyanine chloride (SubPc) is found to increase the LD for SubPc by 50%. In turn, OPVs based on dilute layers of SubPc exhibit a 30% enhancement in power conversion efficiency. The enhancement in power conversion efficiency is realized via enhancements in LD, optimized optical spacing, and directed exciton transport at an exciton permeable interface. The role of spin, energetic disorder, and thermal activation on L D are also addressed. Organic semiconductors that exhibit thermally activated delayed fluorescence and efficient intersystem and reverse intersystem crossing highlight the balance between singlet and triplet exciton energy transfer and diffusion. Temperature dependent measurements for LD provide insight into the inhomogeneously broadened exciton density of states and the thermal nature of exciton energy transfer. Additional topics include energy-cascade OPV architectures and broadband, spectrally tunable photodetectors based on organic semiconductors.

  5. Optical properties of xenon implanted CuInSe{sub 2} by photoacoustic spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Satour, F.Z. [Laboratoire: Croissance et Caracterisation de Nouveaux Semiconducteurs, Departement d' Electronique, Faculte de Technologie, Universite Ferhat Abbas-Setif, 19000 Setif (Algeria); Zegadi, A., E-mail: ameur_zegadi@yahoo.fr [Laboratoire: Croissance et Caracterisation de Nouveaux Semiconducteurs, Departement d' Electronique, Faculte de Technologie, Universite Ferhat Abbas-Setif, 19000 Setif (Algeria)

    2012-07-15

    A theoretical relation is derived for the normalized photoacoustic amplitude signal of a gas-coupled cell for the case of double-layer solid samples with particular application given to ion implanted semiconductors. Numerical estimates for a solar cell of the type CdS/CuInSe{sub 2} based on experimental measured data of these compounds are given to illustrate the photoacoustic effect originating from double-layer samples. In application to ion implanted semiconductors, we show that the absorption coefficient of the implanted layer can be very easily extracted by photoacoustic spectroscopy if the absorption coefficient of the untreated substrate is known. We also present the optical properties results obtained from the analysis of the effect of xenon implantation into CuInSe{sub 2} single crystals with the energy of 40 keV and a dose of 5 Multiplication-Sign 10{sup 16} ions/cm{sup 2}. - Highlights: Black-Right-Pointing-Pointer A derived theoretical relation for photoacoustic study of implanted solids. Black-Right-Pointing-Pointer Optical analysis of the effect of xenon implantation into CuInSe{sub 2}. Black-Right-Pointing-Pointer Impurity defect states analysis following the introduction of Xe into CuInSe{sub 2}. Black-Right-Pointing-Pointer Comparison between results obtained and existing literature.

  6. Characterization and simulation studies on high tilt ion implantation for precision halo implant applications

    Energy Technology Data Exchange (ETDEWEB)

    Guo, B.N. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)]. E-mail: baonian.guo@vsea.com; Zhao, Z.Y. [Spansion LLC, 5204 E. Ben White Blvd., Austin, TX 78741 (United States); Falk, S. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Liu, J. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Shim, K.H. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Jeong, U. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States); Mehta, S. [Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (United States)

    2007-08-15

    Precision dopant placement at high tilt angles for halo applications is required in the fabrication of advanced devices to achieve better transistor characteristics, such as suppression of short channel effects, V {sub t} control and drive current. However, monitoring high tilt implants is not popular in semiconductor fabs, even though most have started monitoring zero-tilt implants in the recent couple of years. In this paper, the authors explore the possibilities of using high tilt angles with higher Miller Index channels. As an example, axial channeling along the <1 1 2> direction is used to evaluate the angle control performance of the VIISta 810EHP medium current ion implanter. Crystal-TRIM (a Monte Carlo simulation code) calculations are compared with experimental SIMS (Secondary Ion Mass Spectrometry) profiles. In addition, the effects of wafer orientation on the platen and wafer mis-cut on the dopant profiles are discussed. Metrology characterization, such as ThermaWave{sup TM} and SIMS, of the <1 1 2> ion channeling is presented.

  7. Metal oxide semiconductor thin-film transistors for flexible electronics

    Science.gov (United States)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  8. Quantum Transport in Semiconductor Devices

    Science.gov (United States)

    1994-06-30

    TITLE AND SUBTITLE S. FUNDING NUMBERS " Quantum Transport in Semiconductor Devices" 6. AUTHOR(S) ,DftftLo3-91-6-oo 7 David K. Ferry 7. PERFORMING...OF ABSTRACT UNCLASSIFIED UNCLASSIFIED UNCLASSIFIED UL NZIN 1540-01-280-5500 Standard Form 298 (Rev 2-89) PrinCrlt>• oy ANSI SIC Z39-18 QUANTUM ... TRANSPORT IN SEMICONDUCTOR DEVICES Final Report on DAAL03-91-G-0067 (28461-EL) David K. Ferry, Principal Investigator Department of Electrical Engineering

  9. Nonlinear Peltier effect in semiconductors

    Science.gov (United States)

    Zebarjadi, Mona; Esfarjani, Keivan; Shakouri, Ali

    2007-09-01

    Nonlinear Peltier coefficient of a doped InGaAs semiconductor is calculated numerically using the Monte Carlo technique. The Peltier coefficient is also obtained analytically for single parabolic band semiconductors assuming a shifted Fermi-Dirac electronic distribution under an applied bias. Analytical results are in agreement with numerical simulations. Key material parameters affecting the nonlinear behavior are doping concentration, effective mass, and electron-phonon coupling. Current density thresholds at which nonlinear behavior is observable are extracted from numerical data. It is shown that the nonlinear Peltier effect can be used to enhance cooling of thin film microrefrigerator devices especially at low temperatures.

  10. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  11. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  12. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  13. Bonds and bands in semiconductors

    CERN Document Server

    Phillips, Jim

    2009-01-01

    This classic work on the basic chemistry and solid state physics of semiconducting materials is now updated and improved with new chapters on crystalline and amorphous semiconductors. Written by two of the world's pioneering materials scientists in the development of semiconductors, this work offers in a single-volume an authoritative treatment for the learning and understanding of what makes perhaps the world's most important engineered materials actually work. Readers will find: --' The essential principles of chemical bonding, electron energy bands and their relationship to conductive and s

  14. The Novel Semiconductor Nanowire Heterostructures

    Institute of Scientific and Technical Information of China (English)

    J.Q.Hu; Y.Bando; J.H.Zhan; D.Golberg

    2007-01-01

    1 Results If one-dimensional heterostructures with a well-defined compositional profile along the wire radial or axial direction can be realized within semiconductor nanowires, new nano-electronic devices,such as nano-waveguide and nano-capcipator, might be obtained. Here,we report the novel semiconducting nanowire heterostructures:(1) Si/ZnS side-to-side biaxial nanowires and ZnS/Si/ZnS sandwich-like triaxial nanowires[1],(2) Ga-Mg3N2 and Ga-ZnS metal-semiconductor nanowire heterojunctions[2-3]and (3) ...

  15. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  16. The processing of semiconductor materials

    Science.gov (United States)

    1979-01-01

    Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.

  17. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  18. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  19. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  20. Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductor structure

    Science.gov (United States)

    Abramov, I. I.; Danilyuk, A. L.

    1997-08-01

    A kinetic model of coherent transport with self-organized carrier transfer via midband gap semiconductor states in metal-insulator-midband gap semiconductor-insulator-semiconductor structure at room temperature is proposed. The coherent transport at room temperature can be a result of continuous oscillations of charge carriers at midband gap semiconductor states.

  1. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  2. Semiconductor devices having a recessed electrode structure

    Science.gov (United States)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  3. Semiconductor assisted metal deposition for nanolithography applications

    Science.gov (United States)

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  4. Semiconductor electrode with improved photostability characteristics

    Science.gov (United States)

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  5. Semiconductor nanocrystal-based phagokinetic tracking

    Science.gov (United States)

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  6. Diode having trenches in a semiconductor region

    Science.gov (United States)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  7. Implant interactions with orthodontics.

    Science.gov (United States)

    Celenza, Frank

    2012-09-01

    Many situations arise in which orthodontic therapy in conjunction with implant modalities is beneficial, relevant or necessary. These situations might entail orthodontic treatment preparatory to the placement of an implant, such as in the site preparation for implant placement. Traditionally, this has been somewhat well understood, but there are certain guidelines that must be adhered to as well as diagnostic steps that must be followed. Provision of adequate space for implant placement is of paramount importance, but there is also the consideration of tissue manipulation and remodeling which orthodontic therapy can achieve very predictably and orthodontists should be well versed in harnessing and employing this modality of site preparation. In this way, hopeless teeth that are slated for extraction can still be utilized by orthodontic extraction to augment tissues, both hard and soft, thereby facilitating site development. On the corollary, and representing a significant shift in treatment sequencing, there are many situations in which orthodontic mechanotherapy can be simplified, expedited, and facilitated by the placement of an implant and utilization as an integral part of the mechanotherapy. Implants have proven to provide excellent anchorage, and have resulted in a new class of anchorage known as "absolute anchorage". Implants can be harnessed as anchors both in a direct and indirect sense, depending upon the dictates of the case. Further, this has led to the development of orthodontic miniscrew systems and techniques, which can have added features such as flexibility in location and placement, as well as ease of use and removal. As orthodontic appliances evolve, the advent of aligner therapy has become mainstream and well accepted, and many of the aforementioned combined treatment modalities can and should be incorporated into this relatively new treatment modality as well.

  8. Iatrogenic Tumor Implantation

    Institute of Scientific and Technical Information of China (English)

    Ying Ma; Ping Bai

    2008-01-01

    Iatrogenic tumor implantation is a condition that results from various medical procedures used during diagnosis or treatment of a malignancy. It involves desquamation and dissemination of tumor cells that develop into a local recurrence or distant metastasis from the tumor under treatment. The main clinical feature of the condition is nodules at the operation's porous channel or incision, which is easily diagnosed in accordance with the case history. Final diagnosis can be made based on pathological examination. Tumor implantation may occur in various puncturing porous channels, including a laparoscopic port, abdominal wall incision, and perineal incision, etc. Besides a malignant tumor,implantation potential exists with diseases, such as a borderline tumor and endometriosis etc. Once a tumor implantation is diagnosed, or suspected, surgical resection is usually conducted.During the diagnosis and treatment of diseases, avoiding and reducing iatrogenic implantation and dissemination has been regarded as an important principle for surgical treatment of tumors. In a clinical practice setting, if possible, excisional biopsy should be employed, if a biopsy is needed. Repeated puncturing should be avoided during a paracentesis. In a laparoscopic procedure, the tissue is first put into a sample bag and then is taken out from the point of incision. After a laparoscopic procedure, the peritoneum, abdominal muscular fasciae, and skin should be carefully closed, and/or the punctured porous channel be excised. In addition, the sample/tissue should be rinsed with distilled water before surgical closure of the abdominal cavity,allowing the exfoliated tumor cells to swell and rupture in the hypo-osmolar solution. Then surgical closure can be conducted following a change of gloves and equipment. The extent of hysteromyomectomy should as far as possible be away from the uterine cavity. The purpose of this study is to make clinicians aware of the possibility of tumor implantation

  9. Semiconductor films on flexible iridium substrates

    Science.gov (United States)

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  10. Electron beam pumped semiconductor laser

    Science.gov (United States)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  11. Semiconductor technology program: Progress briefs

    Science.gov (United States)

    Galloway, K. F.; Scace, R. I.; Walters, E. J.

    1981-01-01

    Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

  12. Energy transfer with semiconductor nanocrystals

    NARCIS (Netherlands)

    Rogach, A.L.; Klar, T.A.; Lupton, J.M.; Meijerink, A.; Feldmann, J.

    2009-01-01

    Fo¨ rster (or fluorescence) resonant energy transfer (FRET) is a powerful spectroscopic technique to study interactions, conformational and distance changes, in hybrid nanosystems. Semiconductor nanocrystals, also known as colloidal quantum dots, are highly efficient fluorophores with a strong band-

  13. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...

  14. Electronic Properties of Semiconductor Interfaces.

    Science.gov (United States)

    1983-02-01

    AD-A130 745 ELECTRONIC PROPERTIES OF SEMICONDUCTOR INTERFACES(U) /; UNIVERSIDAD AUfONOMA DE MADRID (SPAIN) DEPT DE FISICA DEL ESTADO SOLIDO F FLORES...Estado Solido 6.11.02A Universidad Autonoma Cantoblanco, Madrid 34. Spain 1T161102BH57-03 11. CONTROLLING OFFICE NAME AND ADDRESS 12. REPORT DATE

  15. 2010 Defects in Semiconductors GRC

    Energy Technology Data Exchange (ETDEWEB)

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  16. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...

  17. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications...

  18. A variable frequency semiconductor laser

    Energy Technology Data Exchange (ETDEWEB)

    Tosikhiro, F.; Khiromoto, S.

    1984-03-27

    A variable frequency, power stabilized semiconductor laser is patented. This laser includes, in addition to an active layer, a photoconducting channel layer and a layer made from a material manifesting a Pockels effect. A voltage is injected between these two layers to vary the emission frequency. The laser pumping voltage is stabilized.

  19. Controlled growth of semiconductor crystals

    Science.gov (United States)

    Bourret-Courchesne, Edith D.

    1992-01-01

    A method for growth of III-V, II-VI and related semiconductor single crystals that suppresses random nucleation and sticking of the semiconductor melt at the crucible walls. Small pieces of an oxide of boron B.sub.x O.sub.y are dispersed throughout the comminuted solid semiconductor charge in the crucible, with the oxide of boron preferably having water content of at least 600 ppm. The crucible temperature is first raised to a temperature greater than the melt temperature T.sub.m1 of the oxide of boron (T.sub.m1 =723.degree. K. for boron oxide B.sub.2 O.sub.3), and the oxide of boron is allowed to melt and form a reasonably uniform liquid layer between the crucible walls and bottom surfaces and the still-solid semiconductor charge. The temperature is then raised to approximately the melt temperature T.sub.m2 of the semiconductor charge material, and crystal growth proceeds by a liquid encapsulated, vertical gradient freeze process. About half of the crystals grown have a dislocation density of less than 1000/cm.sup.2. If the oxide of boron has water content less than 600 ppm, the crucible material should include boron nitride, a layer of the inner surface of the crucible should be oxidized before the oxide of boron in the crucible charge is melted, and the sum of thicknesses of the solid boron oxide layer and liquid boron oxide layer should be at least 50 .mu.m.

  20. Dental Implant Complications.

    Science.gov (United States)

    Liaw, Kevin; Delfini, Ronald H; Abrahams, James J

    2015-10-01

    Dental implants have increased in the last few decades thus increasing the number of complications. Since many of these complications are easily diagnosed on postsurgical images, it is important for radiologists to be familiar with them and to be able to recognize and diagnose them. Radiologists should also have a basic understanding of their treatment. In a pictorial fashion, this article will present the basic complications of dental implants which we have divided into three general categories: biomechanical overload, infection or inflammation, and other causes. Examples of implant fracture, loosening, infection, inflammation from subgingival cement, failure of bone and soft tissue preservation, injury to surround structures, and other complications will be discussed as well as their common imaging appearances and treatment. Lastly, we will review pertinent dental anatomy and important structures that are vital for radiologists to evaluate in postoperative oral cavity imaging.

  1. Advanced Semiconductor Devices

    Science.gov (United States)

    Shur, Michael S.; Maki, Paul A.; Kolodzey, James

    2007-06-01

    I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto ... [et al.]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green ... [et al.]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V. O. Turin, M. S. Shur and D. B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li ... [et al.]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm ... [et al.]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni ... [et al.]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D. V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P. A. Losee ... [et al.]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T. P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P. A. Losee and T. P. Chow. Present status and future Directions of SiGe HBT technology / M. H. Khater ... [et al.]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne ... [et al.]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L. F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub ... [et al.]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W. J. Schaff and L. F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of

  2. Optical power transfer and communication methods for wireless implantable sensing platforms.

    Science.gov (United States)

    Mujeeb-U-Rahman, Muhammad; Adalian, Dvin; Chang, Chieh-Feng; Scherer, Axel

    2015-09-01

    Ultrasmall scale implants have recently attracted focus as valuable tools for monitoring both acute and chronic diseases. Semiconductor optical technologies are the key to miniaturizing these devices to the long-sought sub-mm scale, which will enable long-term use of these devices for medical applications. This can also enable the use of multiple implantable devices concurrently to form a true body area network of sensors. We demonstrate optical power transfer techniques and methods to effectively harness this power for implantable devices. Furthermore, we also present methods for optical data transfer from such implants. Simultaneous use of these technologies can result in miniaturized sensing platforms that can allow for large-scale use of such systems in real world applications.

  3. Development of industrial ion implantation and ion assisted coating processes: A perspective

    Science.gov (United States)

    Legg, Keith O.; Solnick-Legg, Hillary

    1989-04-01

    Ion beam processes have gone through a series of developmental stages, from being the mainstay of the semiconductor industry for production of integrated circuits, to new commercial processes for biomedical, aerospace and other industries. Although research is still continuing on surface modification using ion beam methods, ion implantation and ion assisted coatings for treatment of metals, ceramics, polymers and composites must now be considered viable industrial processes of benefit in a wide variety of applications. However, ion implantation methods face various barriers to acceptability, in terms not only of other surface treatment processes, but for implantation itself. This paper will discuss some of the challenges faced by a small company whose primary business is development and marketing of ion implantation and ion-assisted coating processes.

  4. Characterization of Si and C implantation induced defects in 4H-SiC

    Science.gov (United States)

    Kummari, Venkata; Dhoubhadel, Mangal; Rout, Bibhudutta; Reinert, Tilo; Spemann, Daniel; Jiang, Weilin; McDaniel, Floyd

    2011-10-01

    Silicon Carbide is considered to be a promising material for dilute magnetic semiconductors (DMSs). Past experimental studies reveal that ferromagnetism can be observed in SiC diluted with 3d transition metals. Recent studies, based on first principle calculations, show that for SiC monolayers, the presence of silicon vacancies (VSi) may induce local magnetization. However, no spin polarization occurs for carbon vacancies (VC), Si+C divacancies, and Si-C antisite defects. Ion implantation is an excellent technique to create vacancies for defect induced magnetism. We have implanted Si and C into 4H-SiC at low energy 60 keV to study the implantation defects for different fluences which corresponds to different percentages of simulated damages (e.g. 10 -- 60 %) obtained using Monte-Carlo simulations code SRIM/TRIM-2008. Defect disorder after ion implantation has been investigated using Rutherford Backscattering Spectrometry/Channeling (RBS/C) and Raman spectroscopy.

  5. Osseointegration of Immediate Transalveolar Implants

    Directory of Open Access Journals (Sweden)

    Yoel González Beriau

    2016-02-01

    Full Text Available Background: osseointegration is critical to start prosthetic rehabilitation. Objective: to describe osseointegration of immediate transalveolar implants. Methods: a prospective case series study was conducted from January 2012 to December 2013. It included all patients (75 patients with 79 implants who attended the Prosthodontics service. Age, sex, osseointegration, cause of tooth loss, region of the implant, specific tooth, bone level and keratinized gingiva around the implant, were the variables studied. Frequency distribution and statistical analysis were used for data analysis. Results: females and patients aged 31 to 45 years predominated. Osseointegration was observed in 97.4% of the implants. Nearly all implants were placed in the premaxilla and posterior maxilla, specifically in the first bicuspids. In most patients, osseointegration with bone formation occurred at the implant collar and in the presence of completely keratinized tissue, with a statistically significant association between the two variables. Conclusion: rehabilitation treatment with this type of implant led to successful osseointegration in most cases studied.

  6. Investigation of Donor and Acceptor Ion Implantation in AlN

    Energy Technology Data Exchange (ETDEWEB)

    Osinsky, Andrei [Agnitron Technology Inc., Eden Prairie, MN (United States)

    2015-09-16

    AlGaN alloys with high Al composition and AlN based electronic devices are attractive for high voltage, high temperature applications, including microwave power sources, power switches and communication systems. AlN is of particular interest because of its wide bandgap of ~6.1eV which is ideal for power electronic device applications in extreme environments which requires high dose ion implantation. One of the major challenges that need to be addressed to achieve full utilization of AlN for opto and microelectronic applications is the development of a doping strategy for both donors and acceptors. Ion implantation is a particularly attractive approach since it allows for selected-area doping of semiconductors due to its high spatial and dose control and its high throughput capability. Active layers in the semiconductor are created by implanting a dopant species followed by very high temperature annealing to reduce defects and thereby activate the dopants. Recovery of implant damage in AlN requires excessively high temperature. In this SBIR program we began the investigation by simulation of ion beam implantation profiles for Mg, Ge and Si in AlN over wide dose and energy ranges. Si and Ge are implanted to achieve the n-type doping, Mg is investigated as a p-type doping. The simulation of implantation profiles were performed in collaboration between NRL and Agnitron using a commercial software known as Stopping and Range of Ions in Matter (SRIM). The simulation results were then used as the basis for ion implantation of AlN samples. The implanted samples were annealed by an innovative technique under different conditions and evaluated along the way. Raman spectroscopy and XRD were used to determine the crystal quality of the implanted samples, demonstrating the effectiveness of annealing in removing implant induced damage. Additionally, SIMS was used to verify that a nearly uniform doping profile was achieved near the sample surface. The electrical characteristics

  7. Mössbauer Studies of dilute Magnetic Semiconductors

    CERN Multimedia

    Gislason, H P; Debernardi, A; Dlamini, W B

    2002-01-01

    The recent discovery of (dilute) magnetic semiconductors with wide band gaps, e.g. GaN, ZnO and other oxides, having Curie temperatures, T$_{\\textrm{c}}$, well above room temperature, has prompted extraordinary experimental and theoretical efforts to understand, control and exploit this unexpected finding not least in view of the obvious potential of such materials for the fabrication of "spin-(elec)tronic" or magneto-optic devices. Ferromagnetism (FM) was achieved mostly by doping with dilute 3d transition metal impurities, notably Mn, Fe, and Co (in \\% concentrations), during growth or by subsequent ion implantation. However, it is fair to state that experimentally the conditions for the occurrence of ferro-, antiferro- or paramagnetism with these impurities are not yet controlled as generally at least two conflicting forms of magnetism or none have been reported for each system - albeit often produced by different techniques. Theory is challenged as "conventional" models seem to fail and no generally accep...

  8. Amorphous semiconductor sample preparation for transmission EXAFS measurements

    Energy Technology Data Exchange (ETDEWEB)

    Ridgway, M.C.; Glover, C.J.; Tan, H.H. [Australian National Univ., Canberra (Australia). Dept. of Electronic Materials Engineering] [and others

    1998-12-31

    A novel methodology has been developed for the preparation of amorphous semiconductor samples for use in transmission extended x-ray absorption fine structure (EXAFS) measurements. Epitaxial heterostructures were fabricated by metal organic chemical vapor deposition (group III-Vs) or molecular beam epitaxy (group IVs). An epitaxial layer of {approximately} 2 {micro}m thickness was separated from the underlying substrate by selective chemical etching of an intermediate sacrificial layer. Ion implantation was utilized to amorphize the epitaxial layer either before or after selective chemical etching. The resulting samples were both stoichiometric and homogeneous in contrast to those produced by conventional techniques. The fabrication of amorphous GaAs, InP, In{sub 0.53}Ga{sub 0.47}As and Si{sub x}Ge{sub 1{minus}x} samples is described. Furthermore, EXAFS measurements comparing both fluorescence and transmission detection, and crystalline and amorphized GaAs, are shown.

  9. Untreated silicone breast implant rupture

    DEFF Research Database (Denmark)

    Hölmich, Lisbet R; Vejborg, Ilse M; Conrad, Carsten;

    2004-01-01

    Implant rupture is a well-known complication of breast implant surgery that can pass unnoticed by both patient and physician. To date, no prospective study has addressed the possible health implications of silicone breast implant rupture. The aim of the present study was to evaluate whether untre...

  10. Hip Resurfacing Implants.

    Science.gov (United States)

    Cadossi, Matteo; Tedesco, Giuseppe; Sambri, Andrea; Mazzotti, Antonio; Giannini, Sandro

    2015-08-01

    EDUCATIONAL OBJECTIVES As a result of reading this article, physicians should be able to: 1. Describe the advantages of hip resurfacing. 2. Describe the disadvantages of hip resurfacing. 3. Identify the population in which hip resurfacing is most often indicated. 4. Demonstrate how to properly postoperatively manage patients with metal-on-metal prostheses. Hip resurfacing offers a suitable solution for young patients affected by hip disease who have high function demands and good bone quality. Bone stock preservation, restoration of the normal proximal femur anatomy, the lack of stress shielding, and the possibility of resuming sporting activity are proven advantages of hip resurfacing. However, there are some disadvantages, such as fracture of the femoral neck, onset of neck narrowing, and possible complications due to the metal-on-metal bearings, including pseudotumors, peri-implant osteolysis, and chronic elevation of metal ions in serum levels. Recent data suggest that the ideal candidate for hip resurfacing is an active male, younger than 65 years, with primary or posttraumatic osteoarthritis, and with a femoral head diameter larger than 50 to 54 mm. Based on these selection criteria, the literature reports implant survival to be similar to that of total hip arthroplasty. The current authors' experience confirms a low failure rate and excellent functional outcomes, with metal ion serum levels becoming stable over time in well-functioning implants. Proper surgical technique, correct patient selection, and the right choice of a well-established prosthetic model are essential elements for the long-term success of these implants.

  11. Corrosion of bio implants

    Indian Academy of Sciences (India)

    U Kamachi Mudali; T M Sridhar; Baldev Raj

    2003-06-01

    Chemical stability, mechanical behaviour and biocompatibility in body fluids and tissues are the basic requirements for successful application of implant materials in bone fractures and replacements. Corrosion is one of the major processes affecting the life and service of orthopaedic devices made of metals and alloys used as implants in the body. Among the metals and alloys known, stainless steels (SS), Co–Cr alloys and titanium and its alloys are the most widely used for the making of biodevices for extended life in human body. Incidences of failure of stainless steel implant devices reveal the occurrence of significant localised corroding viz., pitting and crevice corrosion. Titanium forms a stable TiO2 film which can release titanium particles under wear into the body environment. To reduce corrosion and achieve better biocompatibility, bulk alloying of stainless steels with titanium and nitrogen, surface alloying by ion implantation of stainless steels and titanium and its alloys, and surface modification of stainless steel with bioceramic coatings are considered potential methods for improving the performance of orthopaedic devices. This review discusses these issues in depth and examines emerging directions.

  12. Ion implantation in polymers

    Science.gov (United States)

    Wintersgill, M. C.

    1984-02-01

    An introductory overview will be given of the effects of ion implantation on polymers, and certain areas will be examined in more detail. Radiation effects in general and ion implantation in particular, in the field of polymers, present a number of contrasts with those in ionic crystals, the most obvious difference being that the chemical effects of both the implanted species and the energy transfer to the host may profoundly change the nature of the target material. Common effects include crosslinking and scission of polymer chains, gas evolution, double bond formation and the formation of additional free radicals. Research has spanned the chemical processes involved, including polymerization reactions achievable only with the use of radiation, to applied research dealing both with the effects of radiation on polymers already in commercial use and the tailoring of new materials to specific applications. Polymers are commonly divided into two groups, in describing their behavior under irradiation. Group I includes materials which form crosslinks between molecules, whereas Group II materials tend to degrade. In basic research, interest has centered on Group I materials and of these polyethylene has been studied most intensively. Applied materials research has investigated a variety of polymers, particularly those used in cable insulation, and those utilized in ion beam lithography of etch masks. Currently there is also great interest in enhancing the conducting properties of polymers, and these uses would tend to involve the doping capabilities of ion implantation, rather than the energy deposition.

  13. Remote actuated valve implant

    Energy Technology Data Exchange (ETDEWEB)

    McKnight, Timothy E.; Johnson, Anthony; Moise, Kenneth J.; Ericson, Milton Nance; Baba, Justin S.; Wilgen, John B.; Evans, Boyd Mccutchen

    2016-05-10

    Valve implant systems positionable within a flow passage, the systems having an inlet, an outlet, and a remotely activatable valve between the inlet and outlet, with the valves being operable to provide intermittent occlusion of the flow path. A remote field is applied to provide thermal or magnetic activation of the valves.

  14. Implantable Impedance Plethysmography

    OpenAIRE

    2014-01-01

    We demonstrate by theory, as well as by ex vivo and in vivo measurements that impedance plethysmography, applied extravascularly directly on large arteries, is a viable method for monitoring various cardiovascular parameters, such as blood pressure, with high accuracy. The sensor is designed as an implant to monitor cardiac events and arteriosclerotic progression over the long term.

  15. 120-kV ion-implantation system

    Energy Technology Data Exchange (ETDEWEB)

    Bhatia, M.S.; Bhattacharya, P.K.; Gaonkar, S.; Kansara, M.J.; Sarma, N.; Wagh, A.G.

    1980-01-01

    A compact and versatile heavy ion accelerator has been constructed for the uniform implantation of wafers with beams of microamperes and acceleration voltages of up to 120 keV. The mass analysis of the ion beam is carried out within the high voltage terminal at an energy of 10 keV after beam formation and focussing by an Extractor-cum-Einzel lens. The electromagnet utilized for this was of 14/sup 0/ bending angle. Acceleration is provided by a modified insulated core transformer of five sections operating on three phase power input. Provision is made for the implantation of either single targets and for the batch implantation of up to 36 wafers at a time. The ion source is a Nielsen type in which evaporation and ionization are achieved by the impact of thermionic electrons from a hot filament. It is capable of delivering currents in the microampere range for most of the elements and accepts liquid, solid and gaseous charges. While the facility enables implants of a wide range of doses, species and energies, it is mainly used for boron and phosphorous doping in semiconductors. Electrostatic scanning in two dimensions ensures maximum uniformity. All controls are operated at ground potential and are easily accessible.

  16. Dimensional crossover in semiconductor nanostructures

    Science.gov (United States)

    McDonald, Matthew P.; Chatterjee, Rusha; Si, Jixin; Jankó, Boldizsár; Kuno, Masaru

    2016-08-01

    Recent advances in semiconductor nanostructure syntheses provide unprecedented control over electronic quantum confinement and have led to extensive investigations of their size- and shape-dependent optical/electrical properties. Notably, spectroscopic measurements show that optical bandgaps of one-dimensional CdSe nanowires are substantially (approximately 100 meV) lower than their zero-dimensional counterparts for equivalent diameters spanning 5-10 nm. But what, exactly, dictates the dimensional crossover of a semiconductor's electronic structure? Here we probe the one-dimensional to zero-dimensional transition of CdSe using single nanowire/nanorod absorption spectroscopy. We find that carrier electrostatic interactions play a fundamental role in establishing dimensional crossover. Moreover, the critical length at which this transition occurs is governed by the aspect ratio-dependent interplay between carrier confinement and dielectric contrast/confinement energies.

  17. Coherent magnetic semiconductor nanodot arrays

    Directory of Open Access Journals (Sweden)

    Xiu Faxian

    2011-01-01

    Full Text Available Abstract In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.

  18. A semiconductor photon-sorter

    Science.gov (United States)

    Bennett, A. J.; Lee, J. P.; Ellis, D. J. P.; Farrer, I.; Ritchie, D. A.; Shields, A. J.

    2016-10-01

    Obtaining substantial nonlinear effects at the single-photon level is a considerable challenge that holds great potential for quantum optical measurements and information processing. Of the progress that has been made in recent years one of the most promising methods is to scatter coherent light from quantum emitters, imprinting quantum correlations onto the photons. We report effective interactions between photons, controlled by a single semiconductor quantum dot that is weakly coupled to a monolithic cavity. We show that the nonlinearity of a transition modifies the counting statistics of a Poissonian beam, sorting the photons in number. This is used to create strong correlations between detection events and to create polarization-correlated photons from an uncorrelated stream using a single spin. These results pave the way for semiconductor optical switches operated by single quanta of light.

  19. Spectroscopic analysis of optoelectronic semiconductors

    CERN Document Server

    Jimenez, Juan

    2016-01-01

    This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.

  20. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  1. Acoustoelectric effect in semiconductor superlattice

    Science.gov (United States)

    Mensah, S. Y.; Allotey, F. K. A.; Adjepong, S. K.

    1993-10-01

    Acoustoelectric effect in semiconductor superlattice has been studied for acoustic wave whose wavelength lambda = 2pi/q is smaller than the mean free path of the electrons l (where ql approaches 1). Unlike the homogeneous bulk material where Weinreich relation is independent of the wave number q in the superlattice we observe a dependence on q i.e. spatial dispersion. In the presence of applied constant field E a threshold value was obtained where the acoustoelectric current changes direction.

  2. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  3. Incorporation of oxygen in SiC implanted with hydrogen

    Energy Technology Data Exchange (ETDEWEB)

    Barcz, A., E-mail: barcz@ite.waw.pl [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of Electron Technology, 02-668 Warsaw (Poland); Jakieła, R. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Kozubal, M. [Institute of Electron Technology, 02-668 Warsaw (Poland); Dyczewski, J. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Celler, G.K. [Institute for Advanced Materials, Devices, and Nanotechnology (IAMDN)/Department of Materials Science and Engineering, Rutgers University, New Brunswick, NJ 08901 (United States)

    2015-12-15

    Oxygen accumulation at buried implantation-damage layers was studied after post-implantation annealing of hydrogen- or deuterium-implanted 4H–SiC. In this study H{sup +} or {sup 2}H{sup +} implantation was carried out at energies E, from 200 keV to 1 MeV, to fluences D, ranging from 2 × 10{sup 16}/cm{sup 2} to 1 × 10{sup 17}/cm{sup 2}. For comparison, the implantation was also done into float-zone (FZ) and Czochralski (CZ) silicon wafers. Post-implantation annealing at temperatures from 400 °C to 1150 °C was performed either in pure argon or in a water vapor. Characterization methods included SIMS, RBS and TEM. At sufficiently high doses, hydrogen implantation into semiconductors leads to the irreversible formation of a planar zone of microcavities, bubbles and other extended defects located at the maximum of deposited energy. This kind of highly perturbed layer, containing large amounts of agglomerated hydrogen is known to efficiently getter a number of impurities. Oxygen was detected in both CZ and FZ silicon subjected to Smart-Cut™ processing. We have identified, by SIMS profiling, a considerable oxygen peak situated at the interface between the SiC substrate and a layer implanted with 1 × 10{sup 17} H ions/cm{sup 2} and heated to 1150 °C in either H{sub 2}O vapor or in a nominally pure Ar. In view of a lack of convincing evidence that a hexagonal SiC might contain substantial amounts of oxygen, the objective of the present study was to identify the source and possible transport mechanism of oxygen species to the cavity band. Through the analysis of several implants annealed at various conditions, we conclude that, besides diffusion from the bulk or from surface oxides, an alternative path for oxygen agglomeration is migration of gaseous O{sub 2} or H{sub 2}O from the edge of the sample through the porous layer.

  4. Optical Nonlinearities and Ultrafast Carrier Dynamics in Semiconductor Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Klimov, V.; McBranch, D.; Schwarz, C.

    1998-08-10

    Low-dimensional semiconductors have attracted great interest due to the potential for tailoring their linear and nonlinear optical properties over a wide-range. Semiconductor nanocrystals (NC's) represent a class of quasi-zero-dimensional objects or quantum dots. Due to quantum cordhement and a large surface-to-volume ratio, the linear and nonlinear optical properties, and the carrier dynamics in NC's are significantly different horn those in bulk materials. napping at surface states can lead to a fast depopulation of quantized states, accompanied by charge separation and generation of local fields which significantly modifies the nonlinear optical response in NC's. 3D carrier confinement also has a drastic effect on the energy relaxation dynamics. In strongly confined NC's, the energy-level spacing can greatly exceed typical phonon energies. This has been expected to significantly inhibit phonon-related mechanisms for energy losses, an effect referred to as a phonon bottleneck. It has been suggested recently that the phonon bottleneck in 3D-confined systems can be removed due to enhanced role of Auger-type interactions. In this paper we report femtosecond (fs) studies of ultrafast optical nonlinearities, and energy relaxation and trap ping dynamics in three types of quantum-dot systems: semiconductor NC/glass composites made by high temperature precipitation, ion-implanted NC's, and colloidal NC'S. Comparison of ultrafast data for different samples allows us to separate effects being intrinsic to quantum dots from those related to lattice imperfections and interface properties.

  5. Engineered porous metals for implants

    Science.gov (United States)

    Vamsi Krishna, B.; Xue, Weichang; Bose, Susmita; Bandyopadhyay, Amit

    2008-05-01

    Interest is significant in patient-specific implants with the possibility of guided tissue regeneration, particularly for load-bearing implants. For such implants to succeed, novel design approaches and fabrication technologies that can achieve balanced mechanical and functional performance in the implants are necessary. This article is focused on porous load-bearing implants with tailored micro-as well as macrostructures using laser-engineered net shaping (LENS™), a solid freeform fabrication or rapid prototyping technique that can be used to manufacture patient-specific implants. This review provides an insight into LENS, some properties of porous metals, and the potential applications of this process to fabricate unitized structures which can eliminate longstanding challenges in load-bearing implants to increase their in-vivo lifetime, such as in a total hip prosthesis.

  6. Transition metal implanted ZnO. A correlation between structure and magnetism

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengqiang

    2008-07-01

    Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases. (orig.)

  7. Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, B.C., E-mail: johnsonb@unimelb.edu.a [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of Melbourne, Victoria 3010 (Australia); McCallum, J.C. [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of Melbourne, Victoria 3010 (Australia); Willems van Beveren, L.H.; Gauja, E. [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney 2052 (Australia)

    2010-02-26

    A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 {sup o}C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 {sup o}C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion-implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.

  8. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  9. High performance compound semiconductor SPAD arrays

    Science.gov (United States)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  10. Optical devices featuring textured semiconductor layers

    Science.gov (United States)

    Moustakas, Theodore D.; Cabalu, Jasper S.

    2011-10-11

    A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

  11. Stretchable semiconductor elements and stretchable electrical circuits

    Science.gov (United States)

    Rogers, John A.; Khang, Dahl-Young; Menard, Etienne

    2009-07-07

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  12. Efter cochlear implant

    DEFF Research Database (Denmark)

    Højen, Anders

    Dit barn har netop fået et cochlear implant. Hvad nu? Skal barnet fokusere udelukkende på at lære talt sprog, eller skal det også lære/fortsætte med tegnsprog eller støttetegn? Det er et vanskeligt spørgsmål, og før valget foretages, er det vigtigt at vurdere hvilke konsekvenser valget har, dels...... for den sproglige udvikling isoleret set, og dels for barnets udvikling ud fra en helhedsbetragtning. Dette indlæg fokuserer på, hvilke forventninger man kan have til cochlear implant-brugeres sproglige udvikling med talt sprog alene, hhv. med to sprog (tale og tegn). Disse forventninger er baseret på...

  13. Efter cochlear implant

    DEFF Research Database (Denmark)

    Højen, Anders

    2007-01-01

      Dit barn har netop fået et cochlear implant. Hvad nu? Skal barnet fokusere udelukkende på at lære talt sprog, eller skal det også lære/fortsætte med tegnsprog eller støttetegn? Det er et vanskeligt spørgsmål, og før valget foretages, er det vigtigt at vurdere hvilke konsekvenser valget har, dels...... for den sproglige udvikling isoleret set, og dels for barnets udvikling ud fra en helhedsbetragtning. Dette indlæg fokuserer på, hvilke forventninger man kan have til cochlear implant-brugeres sproglige udvikling med talt sprog alene, hhv. med to sprog (tale og tegn). Disse forventninger er baseret på...

  14. Peri-implant hastalıklar

    OpenAIRE

    Dilsiz, Alparslan; Zihni, Meltem; Yavuz, M Selim

    2011-01-01

    The treatment of partially or totally edentulous subjects with oral implants is a common procedure. Biological complications are occur around implants which are peri-implant mucositis and periimplantitis. Peri-implant mucositis is pathological condition which is normally localized in the soft tissues surrounding an oral implant. Peri-implantitis surrounding oral implants is an inflammatory process affecting the soft and hard tissues resulting in rapid loss of supporting bone associated with b...

  15. Opaque intraocular lens implantation

    OpenAIRE

    Yusuf IH; Patel CK

    2013-01-01

    Imran H Yusuf, CK Patel The Oxford Eye Hospital, West Wing, John Radcliffe Hospital, Headley Way, Headington, Oxford, United KingdomWe read with great interest the recent article by Lee et al,1 who described their clinical experience with three patients who underwent primary implantation of Morcher (Stuttgart, Germany) occlusive intraocular lenses (IOLs) across a variety of neuro-ophthalmic indications. We hope to offer some further insight into these clinical observations in the context of o...

  16. Semiconductor power devices physics, characteristics, reliability

    CERN Document Server

    Lutz, Josef; Scheuermann, Uwe; De Doncker, Rik

    2011-01-01

    Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are esse

  17. Porous and Nanoporous Semiconductors and Emerging Applications

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2006-01-01

    Full Text Available Pores in single-crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nanometer” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with, for example, optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, for example, high explosives or electrodes for micro-fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching, properties of porous semiconductors, and emerging applications.

  18. Wafer-fused semiconductor radiation detector

    Science.gov (United States)

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  19. Emission and Absorption Entropy Generation in Semiconductors

    DEFF Research Database (Denmark)

    Reck, Kasper; Varpula, Aapo; Prunnila, Mika

    2013-01-01

    While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells [1]. We present an analysis of the entropy generation in semiconductor...... materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical...

  20. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  1. [Neurotology and cochlear implants].

    Science.gov (United States)

    Merchán, Miguel A

    2015-05-01

    In this review we analyse cochlear implantation in terms of the fundamental aspects of the functioning of the auditory system. Concepts concerning neuronal plasticity applied to electrical stimulation in perinatal and adult deep hypoacusis are reviewed, and the latest scientific bases that justify early implantation following screening for congenital deafness are discussed. Finally, this review aims to serve as an example of the importance of fostering the sub-specialty of neurotology in our milieu, with the aim of bridging some of the gaps between specialties and thus improving both the knowledge in the field of research on auditory pathologies and in the screening of patients. The objectives of this review, targeted above all towards specialists in the field of otorhinolaryngology, are to analyse some significant neurological foundations in order to reach a better understanding of the clinical events that condition the indications and the rehabilitation of patients with cochlear implants, as well as to use this means to foster the growth of the sub-specialty of neurotology.

  2. Bone Substitutes for Peri-Implant Defects of Postextraction Implants

    Directory of Open Access Journals (Sweden)

    Pâmela Letícia Santos

    2013-01-01

    Full Text Available Placement of implants in fresh sockets is an alternative to try to reduce physiological resorption of alveolar ridge after tooth extraction. This surgery can be used to preserve the bone architecture and also accelerate the restorative procedure. However, the diastasis observed between bone and implant may influence osseointegration. So, autogenous bone graft and/or biomaterials have been used to fill this gap. Considering the importance of bone repair for treatment with implants placed immediately after tooth extraction, this study aimed to present a literature review about biomaterials surrounding immediate dental implants. The search included 56 articles published from 1969 to 2012. The results were based on data analysis and discussion. It was observed that implant fixation immediately after extraction is a reliable alternative to reduce the treatment length of prosthetic restoration. In general, the biomaterial should be used to increase bone/implant contact and enhance osseointegration.

  3. Lasing and ion beam doping of semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Geburt, Sebastian

    2013-01-31

    Semiconductor nanowires exhibit extraordinary optical properties like highly localized light emission, efficient waveguiding and light amplification. Even the stimulation of laser oscillations can be achieved at optical pumping, making nanowires promising for optoelectronic applications. For successful integration into future devices, three major key challenges have to be faced: (1) the understanding of the fundamental properties, (2) the modification of the emission characteristics and (3) the investigation of the efficiency-limiting factors. All key challenges are addressed in this thesis: (1) The fundamental properties of CdS nanowire have been investigated to uncover the size limits for photonic nanowire lasers. Laser oscillations were observed at room temperature and the emission characteristics were correlated to the morphology, which allowed the determination of a minimum diameter and length necessary for lasing. (2) The emission characteristics of ZnO nanowires have been successfully modified by ion beam doping with Co. The structural investigations revealed a good recovery of the ion induced damage in the crystal lattice. Optical activation of the implanted Co ions was achieved and an intense intra-3d-emission confirmed successful modification. (3) The temporal decay of excited luminescence centers strongly depends on the interplay of luminescent ions and defects, thus offering an approach to investigate the efficiency-limiting processes. Mn implanted ZnS nanowires were investigated, as the temporal decay of the incorporated Mn ions can be described by a Foerster energy transfer model modified for nanostructures. The defect concentration was varied systematically by several approaches and the model could successfully fit the transients in all cases. The emission properties of Tb implanted ZnS nanowires were investigated and the temporal decay of the intra-4f-emission could also be fitted by the model, proving its accuracy for an additional element.

  4. Trace analysis of semiconductor materials

    CERN Document Server

    Cali, J Paul; Gordon, L

    1964-01-01

    Trace Analysis of Semiconductor Materials is a guidebook concerned with procedures of ultra-trace analysis. This book discusses six distinct techniques of trace analysis. These techniques are the most common and can be applied to various problems compared to other methods. Each of the four chapters basically includes an introduction to the principles and general statements. The theoretical basis for the technique involved is then briefly discussed. Practical applications of the techniques and the different instrumentations are explained. Then, the applications to trace analysis as pertaining

  5. Optical transitions in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Rupasov, Valery I. [ALTAIR Center LLC, Shrewsbury, MA 01545 (United States) and Landau Institute for Theoretical Physics, Moscow (Russian Federation)]. E-mail: rupasov@townisp.com

    2007-03-19

    Employing the Maxwell equations and conventional boundary conditions for the radiation field on the nanostructure interfaces, we compute the radiative spontaneous decay rate of optical transitions in spherical semiconductor nanocrystals, core-shell nanocrystals and nanostructures comprising more than one shell. We also show that the coupling between optical transitions localized in the shell of core-shell nanocrystals and radiation field is determined by both conventional electro-multipole momenta and electro-multipole 'inverse' momenta. The latter are proportional to the core radius even for interband transitions that should result in very strong optical transitions.

  6. Optic probe for semiconductor characterization

    Science.gov (United States)

    Sopori, Bhushan L.; Hambarian, Artak

    2008-09-02

    Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

  7. Sub-meninges implantation reduces immune response to neural implants.

    Science.gov (United States)

    Markwardt, Neil T; Stokol, Jodi; Rennaker, Robert L

    2013-04-15

    Glial scar formation around neural interfaces inhibits their ability to acquire usable signals from the surrounding neurons. To improve neural recording performance, the inflammatory response and glial scarring must be minimized. Previous work has indicated that meningeally derived cells participate in the immune response, and it is possible that the meninges may grow down around the shank of a neural implant, contributing to the formation of the glial scar. This study examines whether the glial scar can be reduced by placing a neural probe completely below the meninges. Rats were implanted with sets of loose microwire implants placed either completely below the meninges or implanted conventionally with the upper end penetrating the meninges, but not attached to the skull. Histological analysis was performed 4 weeks following surgical implantation to evaluate the glial scar. Our results found that sub-meninges implants showed an average reduction in reactive astrocyte activity of 63% compared to trans-meninges implants. Microglial activity was also reduced for sub-meninges implants. These results suggest that techniques that isolate implants from the meninges offer the potential to reduce the encapsulation response which should improve chronic recording quality and stability.

  8. Current trends in dental implants

    OpenAIRE

    Gaviria, Laura; Salcido, John Paul; Guda, Teja; Ong, Joo L.

    2014-01-01

    Tooth loss is very a very common problem; therefore, the use of dental implants is also a common practice. Although research on dental implant designs, materials and techniques has increased in the past few years and is expected to expand in the future, there is still a lot of work involved in the use of better biomaterials, implant design, surface modification and functionalization of surfaces to improve the long-term outcomes of the treatment. This paper provides a brief history and evoluti...

  9. Dental Implants: Dual Stabilization Technology

    OpenAIRE

    Saini, Rajiv

    2015-01-01

    More recent epidemiological data seem to show an increasing trend of tooth loss due to periodontal reasons rather than caries; the presence of initial attachment loss, bone height and the habit of smoking significantly increase the risk of tooth mortality. A dental implant is a titanium screw which is placed into bone to replace missing teeth. The implant mimics the root of a tooth in function. Dental Implants have changed the face of dentistry over the last three decades. Success of dental i...

  10. Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Dad, R. C. [Government P G College, Mandsaur (M P) (India); Ghosh, S. [School of Studies in Physics, Vikram University, Ujjain, (M P) (India)

    2015-07-31

    A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

  11. Polaronic trapping in magnetic semiconductors

    Science.gov (United States)

    Raebiger, Hannes

    2012-02-01

    GaN doped with iron is an interesting candidate material for magnetic semiconductors, as p-d coupling between the localized Fe-d and extended N-p hole states is expected to facilitate long-range ferromagnetic alignment of the Fe spins [1]. This picture of extended states in GaN:Fe, however, falls apart due to a polaronic localization of the hole carriers nearby the Fe impurities. To elucidate the carrier localization in GaN:Fe and related iron doped III-V semiconductors, I present a systematic study using self-interaction corrected density-functional calculations [2]. These calculations predict three distinct scenarios. (i) Some systems do sustain extended host-like hole states, (ii) some exhibit polaronic trapping, (iii) and some exhibit carrier trapping at Fe-d orbitals. These behaviors are described in detail to give an insight as to how to distinguish them experimentally. I thank T. Fujita, C. Echeverria-Arrondo, and A. Ayuela for their collaboration.[4pt] [1] T. Dietl et al, Science, 287, 1019 (2000).[0pt] [2] S. Lany and A. Zunger, Phys. Rev. B, 80, 085202 (2009).

  12. The ATLAS semiconductor tracker (SCT)

    CERN Document Server

    Jackson, J N

    2005-01-01

    The ATLAS detector (CERN/LHCC/94-43 (1994)) is designed to study a wide range of physics at the CERN Large Hadron Collider (LHC) at luminosities up to 10**3**4 cm**-**2 s**-**1 with a bunch-crossing rate of 40 MHz. The Semiconductor Tracker (SCT) forms a key component of the Inner Detector (vol. 1, ATLAS TDR 4, CERN/LHCC 97-16 (1997); vol. 2, ATLAS TDR 5, CERN/LHCC 97-17 (1997)) which is situated inside a 2 T solenoid field. The ATLAS Semiconductor Tracker (SCT) utilises 4088 silicon modules with binary readout mounted on carbon fibre composite structures arranged in the forms of barrels in the central region and discs in the forward region. The construction of the SCT is now well advanced. The design of the SCT modules, services and support structures will be briefly outlined. A description of the various stages in the construction process will be presented with examples of the performance achieved and the main difficulties encountered. Finally, the current status of the construction is reviewed.

  13. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  14. Dental implants in growing children

    Directory of Open Access Journals (Sweden)

    S K Mishra

    2013-01-01

    Full Text Available The replacement of teeth by implants is usually restricted to patients with completed craniofacial growth. The aim of this literature review is to discuss the use of dental implants in normal growing patients and in patients with ectodermal dysplasia and the influence of maxillary and mandibular skeletal and dental growth on the stability of those implants. It is recommended that while deciding the optimal individual time point of implant insertion, the status of skeletal growth, the degree of hypodontia, and extension of related psychological stress should be taken into account, in addition to the status of existing dentition and dental compliance of a pediatric patient.

  15. Cochlear implants in genetic deafness

    Institute of Scientific and Technical Information of China (English)

    Xuezhong Liu

    2014-01-01

    Genetic defects are one of the most important etiologies of severe to profound sensorineural hearing loss and play an important role in determining cochlear implantation outcomes. While the pathogenic mutation types of a number of deafness genes have been cloned, the pathogenesis mechanisms and their relationship to the outcomes of cochlear implantation remain a hot research area. The auditory performance is considered to be affected by the etiology of hearing loss and the number of surviving spiral ganglion cells, as well as others. Current research advances in cochlear implantation for hereditary deafness, especially the relationship among clinic-types, genotypes and outcomes of cochlear implantation, will be discussed in this review.

  16. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  17. OPENING ADDRESS: Heterostructures in Semiconductors

    Science.gov (United States)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  18. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  19. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita

    2004-11-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  20. Packaging of high power semiconductor lasers

    CERN Document Server

    Liu, Xingsheng; Xiong, Lingling; Liu, Hui

    2014-01-01

    This book introduces high power semiconductor laser packaging design. The characteristics and challenges of the design and various packaging, processing, and testing techniques are detailed by the authors. New technologies, in particular thermal technologies, current applications, and trends in high power semiconductor laser packaging are described at length and assessed.

  1. neutron-Induced Failures in semiconductor Devices

    Energy Technology Data Exchange (ETDEWEB)

    Wender, Stephen Arthur [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  2. Epitaxy of semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Krogstrup, P.; Ziino, N.L.B.; Chang, W.

    2015-01-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface...

  3. Hybrid anode for semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  4. Semiconductor saturable absorbers for ultrafast terahertz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    2010-01-01

    We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP, and Ge in the terahertz THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum...

  5. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

  6. Energetics of the Semiconductor-Electrolyte Interface.

    Science.gov (United States)

    Turner, John A.

    1983-01-01

    The use of semiconductors as electrodes for electrochemistry requires an understanding of both solid-state physics and electrochemistry, since phenomena associated with both disciplines are seen in semiconductor/electrolyte systems. The interfacial energetics of these systems are discussed. (JN)

  7. A Theoretical Search for Supervelocity Semiconductors

    Science.gov (United States)

    1990-09-30

    Koscielniak, J.L. Pelouard and M.A. Littlejohn, "Intrinsic and Extrinsic Response of GaAs Metal-Semiconductor-Metal Photodetectors," IEEE Photonics...and submicron MOSFETs . L ) -- -V11, TABLE OF CONTENTS 1.0 INTRODUCTION...semiconductor-metal (MSM) photodetector with planar (low interelectrode capacitance ) structure which is of interest for discrete applications and

  8. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  9. Semiconductor High-Energy Radiation Scintillation Detector

    CERN Document Server

    Kastalsky, A; Spivak, B

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. The most important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombi...

  10. Semiconductor switch geometry with electric field shaping

    Science.gov (United States)

    Booth, Rex; Pocha, Michael D.

    1994-01-01

    An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

  11. Molecular semiconductors photoelectrical properties and solar cells

    CERN Document Server

    Rees, Ch

    1985-01-01

    During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator « 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds,...

  12. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  13. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2013-01-01

    This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended.  In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One o...

  14. Psychological intervention following implantation of an implantable defibrillator

    DEFF Research Database (Denmark)

    Pedersen, Susanne S.; van den Broek, Krista C; Sears, Samuel F

    2007-01-01

    The medical benefits of the implantable cardioverter defibrillator (ICD) are unequivocal, but a subgroup of patients experiences emotional difficulties following implantation. For this subgroup, some form of psychological intervention may be warranted. This review provides an overview of current...... evidence on the efficacy of psychological intervention in ICD patients and recommendations for future research....

  15. Damage formation and recovery in Fe implanted 6H–SiC

    CERN Document Server

    Miranda, Pedro; Catarino, Norberto; Lorenz, Katharina; Correia, João Guilherme; Alves, Eduardo

    2012-01-01

    Silicon carbide doped with magnetic ions such as Fe, Mn, Ni or Co could make this wide band gap semiconductor part of the diluted magnetic semiconductor family. In this study, we report the implantation of 6H-SiC single crystals with magnetic $^{56}$Fe$^{+}$ ions with an energy of 150 keV. The samples were implanted with 5E14 Fe$^+$/cm$^{2}$ and 1E16 Fe$^+$/cm$^{2}$ at different temperatures to study the damage formation and lattice site location. The samples were subsequently annealed up to 1500°C in vacuum in order to remove the implantation damage. The effect of the annealing was followed by Rutherford Backscattering/Channeling (RBS/C) measurements. The results show that samples implanted above the critical amorphization temperature reveal a high fraction of Fe incorporated into regular sites along the [0001] axis. After the annealing at 1000°C, a maximum fraction of 75%, corresponding to a total of 3.8E14 Fe$^{+}$/cm$^{2}$, was measured in regular sites along the [0001] axis. A comparison is made betwee...

  16. Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors

    CERN Document Server

    Wolf, H; Kronenberg, J; Wagner, F; ISOLDE Collaboration

    2010-01-01

    The diffusion of the impurities Cu, Ag, Au, and Na in CdTe and CdZnTe exhibits the unusual phenomenon of uphill diffusion if the diffusion of the impurity is performed under external Cd pressure at temperatures typically in the range 700-900 K. A model is proposed that describes these concentration profiles quantitatively and yields pre-requisites for the observation of uphill diffusion. If a metal layer is evaporated onto the implanted surface, the diffusion of the impurity is strongly affected by the generation of intrinsic defects at the metal-semiconductor interface. (C) 2010 WILEY-VCH Verlag GmbH \\& Co. KGaA, Weinheim

  17. Pre-requisites for the formation of unusual diffusion profiles in II-VI semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Wolf, H.; Kronenberg, J.; Wagner, F.; Wichert, T. [Technische Physik, Universitaet des Saarlandes, Saarbruecken (Germany)

    2010-06-15

    The diffusion of the impurities Cu, Ag, Au, and Na in CdTe and CdZnTe exhibits the unusual phenomenon of uphill diffusion if the diffusion of the impurity is performed under external Cd pressure at temperatures typically in the range 700-900 K. A model is proposed that describes these concentration profiles quantitatively and yields pre-requisites for the observation of uphill diffusion. If a metal layer is evaporated onto the implanted surface, the diffusion of the impurity is strongly affected by the generation of intrinsic defects at the metal-semiconductor interface. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  18. Mössbauer and DLTS Investigations of Impurity-Vacancy Complexes in Semiconductors

    CERN Multimedia

    Nylandsted larsen, A

    2002-01-01

    % IS321 \\\\ \\\\ The structure and electronic states of impurity-vacancy complexes formed in silicon-based semiconductors are proposed to be studied by Mössbauer and DLTS techniques utilizing implanted radioactive $^{119}$Sb isotopes. Impurity-vacancy complexes are created thermally at high temperatures, but can also be produced by electron and ion irradiation at low temperatures. By comparing complexes created by both methods we expect to be able to understand the newly discovered, extremely fast diffusion of dopants in n-type extrinsic silicon.

  19. Scientists Design Heat-Activated Penis Implant

    Science.gov (United States)

    ... news/fullstory_162815.html Scientists Design Heat-Activated Penis Implant Device an improvement on current implants, researchers ... News) -- Doctors report that they have crafted a penis implant that becomes erect when heated. Dubbed by ...

  20. Isotope separation method for preparing novel semiconductors, and semiconductor junctions containing the novel semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Fanica, M.M.; Ivascu, M.; Ilas, G.; Dumitru, I.

    1997-02-20

    An isotope separation method for use in the field of semiconductors is provided. The method is an improvement to the invention disclosed in OSIM patent application no. 95-01302 of 13.07.1995. Specifically, a method is provided for processing a semiconductor element having a cubic, rhombic or hexagonal crystalline structure and containing at least two stable isotopes, to enable the concentration of the various isotopes to be altered. The method comprises exposing the element to a temperature adjacent to its diffusion temperature, simultaneously applying to the element a 1 Amp., 4-30 KV electric current proportional to the ionisation energy expressed in Kcal/g mol, arranging the element being processed in a gaseous medium containing at least one inert gas to prevent oxidation of the element, and continuing the process for around 2 hours. An antimony (Sb) element with an isotope ratio of Sb 121 (P1,P2):Sb 123 (P3) = 1.70 is also provided. (author) figs.

  1. Atomic layer deposited TiO{sub 2} for implantable brain-chip interfacing devices

    Energy Technology Data Exchange (ETDEWEB)

    Cianci, E., E-mail: elena.cianci@mdm.imm.cnr.it [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (MB) (Italy); Lattanzio, S. [Istituto di Fisiologia, Dipartimento di Anatomia Umana e Fisiologia, Universita di Padova, 35131 Padova (Italy); Dipartimento di Ingegneria dell' Informazione, Universita di Padova, 35131 Padova (Italy); Seguini, G. [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (Italy); Vassanelli, S. [Istituto di Fisiologia, Dipartimento di Anatomia Umana e Fisiologia, Universita di Padova, 35131 Padova (Italy); Fanciulli, M. [Laboratorio MDM, IMM-CNR, 20864 Agrate Brianza (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, 20126 Milano (Italy)

    2012-05-01

    In this paper we investigated atomic layer deposition (ALD) TiO{sub 2} thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality. The ALD process was performed at 295 Degree-Sign C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al{sub 2}O{sub 3} buffer layer between TiO{sub 2} and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.

  2. Implant periapical lesion: diagnosis and treatment

    OpenAIRE

    Peñarrocha Diago, María; Maestre Ferrín, Laura; Cervera Ballester, Juan; Peñarrocha Oltra, David

    2012-01-01

    The implant periapical lesion is the infectious-inflammatory process of the tissues surrounding the implant apex. It may be caused by different factors: contamination of the implant surface, overheating of bone during drilling, preparation of a longer implant bed than the implant itself, and pre-existing bone disease. Diagnosis is achieved by studying the presence of symptoms and signs such us pain, swelling, suppuration or fistula; in the radiograph an implant periapical radiolucency may app...

  3. Piezosurgery in implant dentistry

    Directory of Open Access Journals (Sweden)

    Stübinger S

    2015-11-01

    Full Text Available Stefan Stübinger,1 Andres Stricker,2 Britt-Isabelle Berg3,4 1Hightech Research Center of Cranio-maxillofacial Surgery, University of Basel, Allschwil, Switzerland; 2Private Practice, Konstanz, Germany; 3Department of Cranio-maxillofacial Surgery, University Hospital Basel, Basel, Switzerland; 4Division of Oral and Maxillofacial Radiology, Columbia University Medical Center, New York, NY, USA Abstract: Piezosurgery, or the use of piezoelectric devices, is being applied increasingly in oral and maxillofacial surgery. The main advantages of this technique are precise and selective cuttings, the avoidance of thermal damage, and the preservation of soft-tissue structures. Through the application of piezoelectric surgery, implant-site preparation, bone grafting, sinus-floor elevation, edentulous ridge splitting or the lateralization of the inferior alveolar nerve are very technically feasible. This clinical overview gives a short summary of the current literature and outlines the advantages and disadvantages of piezoelectric bone surgery in implant dentistry. Overall, piezoelectric surgery is superior to other methods that utilize mechanical instruments. Handling of delicate or compromised hard- and soft-tissue conditions can be performed with less risk for the patient. With respect to current and future innovative surgical concepts, piezoelectric surgery offers a wide range of new possibilities to perform customized and minimally invasive osteotomies. Keywords: implantology, piezoelectric device, piezosurgery, maxillary sinus elevation, bone grafting, osteotomy, edentulous ridge splitting

  4. Improving Sustainability of Ion Implant Modules

    Science.gov (United States)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  5. Endometrium implantation and ectopic pregnancy

    Institute of Scientific and Technical Information of China (English)

    LIU Yixun

    2004-01-01

    Embryo in uterine implantation is a complex and multifactor-related process and is a downstream and ideal point for woman fertility control.Understanding the cellular and molecular mechanism of implantation is a prerequisite for development of anti-implantation contraceptives.In spite of considerable accumulation of information from the laboratory animals that has been achieved,it is difficult to generate such information in human due to ethical restriction and experimental limitation,and the present knowledge for understanding the definitive mechanisms which control these events remains elusive.Embryo implantation can also occur outside uterus.Some women with abdominal pregnancies could successfully complete the processes of gestation and bear normal babies,implying that implantation itself may be not an endometrium-specific process.Reproductive biologists should cooperate with gynecologists to further comparatively study the molecular and cellular mechanisms of implantation normally occurring in endometrium and abnormally appearing outside uterine cavity.Such collaborative studies may generate new important information for developing anti-implantation contraceptive and for techniques of accurate diagnosis of ectopic pregnancy.A specially designed GnRH-2 analog and a combination use of Iow dose RU486 and gossypol as anti-implantation contraceptives have been suggested.

  6. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  7. Phosphorous doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  8. Phosphorus doping a semiconductor particle

    Science.gov (United States)

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  9. Electrolysis of a molten semiconductor

    Science.gov (United States)

    Yin, Huayi; Chung, Brice; Sadoway, Donald R.

    2016-08-01

    Metals cannot be extracted by electrolysis of transition-metal sulfides because as liquids they are semiconductors, which exhibit high levels of electronic conduction and metal dissolution. Herein by introduction of a distinct secondary electrolyte, we reveal a high-throughput electro-desulfurization process that directly converts semiconducting molten stibnite (Sb2S3) into pure (99.9%) liquid antimony and sulfur vapour. At the bottom of the cell liquid antimony pools beneath cathodically polarized molten stibnite. At the top of the cell sulfur issues from a carbon anode immersed in an immiscible secondary molten salt electrolyte disposed above molten stibnite, thereby blocking electronic shorting across the cell. As opposed to conventional extraction practices, direct sulfide electrolysis completely avoids generation of problematic fugitive emissions (CO2, CO and SO2), significantly reduces energy consumption, increases productivity in a single-step process (lower capital and operating costs) and is broadly applicable to a host of electronically conductive transition-metal chalcogenides.

  10. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  11. Photodiodes based on fullerene semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Voz, C. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)], E-mail: cvoz@eel.upc.edu; Puigdollers, J. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO- Institut de Ciencies Fotoniques, Mediterranean Technology Park, Av. del Canal Olimpic s/n, 08860-Castelldefels (Spain); Fonrodona, M.; Stella, M.; Andreu, J. [Solar Energy Group, Departament Fisica Aplicada i Optica, Universitat de Barcelona, Avda. Diagonal 647, 08028-Barcelona (Spain); Alcubilla, R. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)

    2007-07-16

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum.

  12. Short implants in oral rehabilitation

    Directory of Open Access Journals (Sweden)

    Emmanuel Panobianco Chizolini

    2011-07-01

    Full Text Available Introduction and objective: The placement of short dental implants is used as an alternative treatment modality to bone grafting procedures. The aim of this study was to discuss, through a literature review, the features, indications and biomechanical aspects of short implants, as well as to report the clinical factors that influence on their indication. Literature review and conclusion: It was found that short implants osseointegration can be compromised by risk factors that must be controlled to achieve treatment success. In conclusion, the main indication of short implants is to avoid an invasive surgery at atrophic areas of maxilla and mandible. Furthermore, implant design associated with surface treatment are factors that compensate its short length.

  13. Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implanttation

    Institute of Scientific and Technical Information of China (English)

    Guo Hui; Wang Yue-Hu; Zhang Yu-Ming; Qiao Da-Yong; Zhang Yi-Men

    2009-01-01

    By formation of an intermediate semiconductor layer(ISL)with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method(TLM)test patterns is formed on N-wells created by P+ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-tyDe 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as loW as 4.23×10~(-5) Ω·cm~2 is achieved after annealing in N_2 at 800℃ for 3 min, which iS much lower than that(>900℃)in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge~+ ion implantations.

  14. Study of Endometrial Receptivity during Implantation in Implantation Dysfunction Mouse

    Institute of Scientific and Technical Information of China (English)

    Yan-juan LIU; Guang-ying HUANG; Ming-wei YANG; Fu-er LU

    2008-01-01

    Objective To establish the mice model of implantation dysfunction and to study the endometrial receptivity during implantation in implantation dysfunction mouse. Methods Sexually mature female virgin, Kunming mice were randomly assigned to the control group and the model group postcoitally. The model mice at 9 : 00 AM on d 4 of pregnancy(d 4) were injected subcutaneously with mifepristone. All animals were sacrificed at 9:00 PM on d 4 and their uterine horns were examined for the presence of implanted embryos. Histopathology of uterine endometrium was observed by light-microscope. The endometrial expressions of estrogen receptor (ER) and progesterone receptor (PR) assessed by immunnohistochemical SP method. The endometrial expressions of ER mRNA and PR mRNA were assessed by semi-quantitative reverse transcriptase polymerase chain reaction (RT-PCR).Results Compared with control group, implantation rates and average embryo number significently decreased in model group, the development of endometrium was inhibited. In model group, absorbency and area rate of ER and PR in the gland and stroma were lower than those in control group (P<0.05). Expressions of ER mRNA and PR mRNA in model uterus were significantly lower than those in the control.Conclusion The endometrial receptivity and implantation decreased in mifepristoneinduced implantation dysfunction mouse.

  15. Multiple Applications of GaAs semiconductors

    Science.gov (United States)

    Martel, Jenrené; Wonka, Willy

    2003-03-01

    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  16. Semiconductor Nanostructures Quantum States and Electronic Transport

    CERN Document Server

    Ihn, Thomas

    2009-01-01

    This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with the basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It contains material aspects such as band e

  17. Pulsed pumping of semiconductor disk lasers.

    Science.gov (United States)

    Hempler, Nils; Hopkins, John-Mark; Kemp, Alan J; Schulz, Nico; Rattunde, Marcel; Wagner, Joachim; Dawson, Martin D; Burns, David

    2007-03-19

    Efficient operation of semiconductor disk lasers is demonstrated using uncooled and inexpensive 905nm high-power pulsed semiconductor pump lasers. Laser emission, with a peak power of 1.7W, is obtained from a 2.3mum semiconductor disk laser. This is seven times the power achieved under continuous pumping. Analysis of the time-dependent spectral characteristics of the laser demonstrate that significant device heating occurs over the 100-200ns duration of the pumping pulse - finite element modelling of the thermal processes is undertaken in support of these data. Spectral narrowing to below 0.8nm is obtained by using an intra-cavity birefringent filter.

  18. Synthesis and Characterization of Novel Organic Semiconductors

    Institute of Scientific and Technical Information of China (English)

    Prashant; Sonar; Samarendra; P.Singh; Ananth; Dodabalapur; Alan; Sellinger

    2007-01-01

    1 Results Development of new organic semiconductors for use in low-cost,large-area applications is very important for growth of the organic electronic industry.Existing non-polymer based organic semiconductors can be roughly classified into linear,star-shaped,branched or lamellar molecules on the basis of their shape[1]. Generally hole (p-type) and electron (n-type) transporting semiconductors have been prepared from electron donating and accepting π-systems respectively[2]. These materials can be used ...

  19. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  20. Long wave polar modes in semiconductor heterostructures

    CERN Document Server

    Trallero-Giner, C; Garca̕-Moliner, F 0

    1998-01-01

    Long Wave Polar Modes in Semiconductor Heterostructures is concerned with the study of polar optical modes in semiconductor heterostructures from a phenomenological approach and aims to simplify the model of lattice dynamics calculations. The book provides useful tools for performing calculations relevant to anyone who might be interested in practical applications. The main focus of Long Wave Polar Modes in Semiconductor Heterostructures is planar heterostructures (quantum wells or barriers, superlattices, double barrier structures etc) but there is also discussion on the growing field of quan

  1. Semiconductor quantum-dot lasers and amplifiers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

    2002-01-01

    -power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

  2. Nitride Semiconductors Handbook on Materials and Devices

    CERN Document Server

    Ruterana, Pierre; Neugebauer, Jörg

    2003-01-01

    Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of t

  3. Colloquium: Persistent spin textures in semiconductor nanostructures

    Science.gov (United States)

    Schliemann, John

    2017-01-01

    Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by proposals for quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, the spin-orbit interaction can be engineered to produce persistent spin structures with extraordinarily long spin lifetimes even in the presence of disorder and imperfections. Experimental and theoretical developments on this subject for both n -doped and p -doped structures are reviewed and possible device applications are discussed.

  4. Controlling the stoichiometry and doping of semiconductor materials

    Science.gov (United States)

    Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

    2016-08-16

    Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

  5. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    Science.gov (United States)

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  6. Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kovalskiy, V. A., E-mail: kovalva@iptm.ru; Vergeles, P. S.; Eremenko, V. G. [Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, Academician Ossipyan str. 6, Chernogolovka, Moscow Region, 142432 (Russian Federation); Fokin, D. A. [Bruker Nano Surface Division, Pyatnitskaya str. 50/2, build. 1, Moscow 119017 (Russian Federation); Dorokhin, M. V.; Danilov, Yu. A.; Zvonkov, B. N. [Physical-Technical Research Institute, University of Nizhni Novgorod, pr. Gagarina 23/3, Nizhni Novgorod 603950 (Russian Federation)

    2014-12-08

    An approach for understanding the origin of cross-hatch pattern (CHP) on the surface of lattice mismatched GaMnAs/InGaAs samples grown on GaAs (001) substrates is developed. It is argued that the motion of threading dislocations in the (111) slip planes during the relaxation of InGaAs buffer layer is more complicated process and its features are similar to the ones of dislocation half-loops gliding in plastically deformed crystals. The heterostructures were characterized by atomic force microscopy and electron beam induced current (EBIC). Detailed EBIC experiments revealed contrast features, which cannot be accounted for by the electrical activity of misfit dislocations at the buffer/substrate interface. We attribute these features to specific extended defects (EDs) generated by moving threading dislocations in the partially relaxed InGaAs layers. We believe that the core topology, surface reconstruction, and elastic strains from these EDs accommodated in slip planes play an important role in the CHP formation. The study of such electrically active EDs will allow further understanding of degradation and changes in characteristics of quantum devices based on strained heterostructures.

  7. Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

    Science.gov (United States)

    Kovalskiy, V. A.; Vergeles, P. S.; Eremenko, V. G.; Fokin, D. A.; Dorokhin, M. V.; Danilov, Yu. A.; Zvonkov, B. N.

    2014-12-01

    An approach for understanding the origin of cross-hatch pattern (CHP) on the surface of lattice mismatched GaMnAs/InGaAs samples grown on GaAs (001) substrates is developed. It is argued that the motion of threading dislocations in the {111} slip planes during the relaxation of InGaAs buffer layer is more complicated process and its features are similar to the ones of dislocation half-loops gliding in plastically deformed crystals. The heterostructures were characterized by atomic force microscopy and electron beam induced current (EBIC). Detailed EBIC experiments revealed contrast features, which cannot be accounted for by the electrical activity of misfit dislocations at the buffer/substrate interface. We attribute these features to specific extended defects (EDs) generated by moving threading dislocations in the partially relaxed InGaAs layers. We believe that the core topology, surface reconstruction, and elastic strains from these EDs accommodated in slip planes play an important role in the CHP formation. The study of such electrically active EDs will allow further understanding of degradation and changes in characteristics of quantum devices based on strained heterostructures.

  8. Implant materials modified by colloids

    Directory of Open Access Journals (Sweden)

    Zboromirska-Wnukiewicz Beata

    2016-03-01

    Full Text Available Recent advances in general medicine led to the development of biomaterials. Implant material should be characterized by a high biocompatibility to the tissue and appropriate functionality, i.e. to have high mechanical and electrical strength and be stable in an electrolyte environment – these are the most important properties of bioceramic materials. Considerations of biomaterials design embrace also electrical properties occurring on the implant-body fluid interface and consequently the electrokinetic potential, which can be altered by modifying the surface of the implant. In this work, the surface of the implants was modified to decrease the risk of infection by using metal colloids. Nanocolloids were obtained using different chemical and electrical methods. It was found that the colloids obtained by physical and electrical methods are more stable than colloids obtained by chemical route. In this work the surface of modified corundum implants was investigated. The implant modified by nanosilver, obtained by electrical method was selected. The in vivo research on animals was carried out. Clinical observations showed that the implants with modified surface could be applied to wounds caused by atherosclerotic skeleton, for curing the chronic and bacterial inflammations as well as for skeletal reconstruction surgery.

  9. Titanium Implant Osseointegration Problems with Alternate Solutions Using Epoxy/Carbon-Fiber-Reinforced Composite.

    Science.gov (United States)

    Petersen, Richard C

    2014-12-01

    The aim of the article is to present recent developments in material research with bisphenyl-polymer/carbon-fiber-reinforced composite that have produced highly influential results toward improving upon current titanium bone implant clinical osseointegration success. Titanium is now the standard intra-oral tooth root/bone implant material with biocompatible interface relationships that confer potential osseointegration. Titanium produces a TiO2 oxide surface layer reactively that can provide chemical bonding through various electron interactions as a possible explanation for biocompatibility. Nevertheless, titanium alloy implants produce corrosion particles and fail by mechanisms generally related to surface interaction on bone to promote an inflammation with fibrous aseptic loosening or infection that can require implant removal. Further, lowered oxygen concentrations from poor vasculature at a foreign metal surface interface promote a build-up of host-cell-related electrons as free radicals and proton acid that can encourage infection and inflammation to greatly influence implant failure. To provide improved osseointegration many different coating processes and alternate polymer matrix composite (PMC) solutions have been considered that supply new designing potential to possibly overcome problems with titanium bone implants. Now for important consideration, PMCs have decisive biofunctional fabrication possibilities while maintaining mechanical properties from addition of high-strengthening varied fiber-reinforcement and complex fillers/additives to include hydroxyapatite or antimicrobial incorporation through thermoset polymers that cure at low temperatures. Topics/issues reviewed in this manuscript include titanium corrosion, implant infection, coatings and the new epoxy/carbon-fiber implant results discussing osseointegration with biocompatibility related to nonpolar molecular attractions with secondary bonding, carbon fiber in vivo properties, electrical

  10. Titanium Implant Osseointegration Problems with Alternate Solutions Using Epoxy/Carbon-Fiber-Reinforced Composite

    Directory of Open Access Journals (Sweden)

    Richard C. Petersen

    2014-12-01

    Full Text Available The aim of the article is to present recent developments in material research with bisphenyl-polymer/carbon-fiber-reinforced composite that have produced highly influential results toward improving upon current titanium bone implant clinical osseointegration success. Titanium is now the standard intra-oral tooth root/bone implant material with biocompatible interface relationships that confer potential osseointegration. Titanium produces a TiO2 oxide surface layer reactively that can provide chemical bonding through various electron interactions as a possible explanation for biocompatibility. Nevertheless, titanium alloy implants produce corrosion particles and fail by mechanisms generally related to surface interaction on bone to promote an inflammation with fibrous aseptic loosening or infection that can require implant removal. Further, lowered oxygen concentrations from poor vasculature at a foreign metal surface interface promote a build-up of host-cell-related electrons as free radicals and proton acid that can encourage infection and inflammation to greatly influence implant failure. To provide improved osseointegration many different coating processes and alternate polymer matrix composite (PMC solutions have been considered that supply new designing potential to possibly overcome problems with titanium bone implants. Now for important consideration, PMCs have decisive biofunctional fabrication possibilities while maintaining mechanical properties from addition of high-strengthening varied fiber-reinforcement and complex fillers/additives to include hydroxyapatite or antimicrobial incorporation through thermoset polymers that cure at low temperatures. Topics/issues reviewed in this manuscript include titanium corrosion, implant infection, coatings and the new epoxy/carbon-fiber implant results discussing osseointegration with biocompatibility related to nonpolar molecular attractions with secondary bonding, carbon fiber in vivo

  11. Dimensional effects in semiconductor nanowires; Dimensionseffekte in Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Stichtenoth, Daniel

    2008-06-23

    Nanomaterials show new physical properties, which are determined by their size and morphology. These new properties can be ascribed to the higher surface to volume ratio, to quantum size effects or to a form anisotropy. They may enable new technologies. The nanowires studied in this work have a diameter of 4 to 400 nm and a length up to 100 {mu}m. The semiconductor material used is mainly zinc oxide (ZnO), zinc sulfide (ZnS) and gallium arsenide (GaAs). All nanowires were synthesized according to the vapor liquid solid mechanism, which was originally postulated for the growth of silicon whiskers. Respective modifications for the growth of compound semiconductor nanowires are discussed. Detailed luminescence studies on ZnO nanowires with different diameters show pronounced size effects which can be attributed to the origins given above. Similar to bulk material, a tuning of the material properties is often essential for a further functionalization of the nanowires. This is typical realized by doping the source material. It becomes apparent, that a controlled doping of nanowires during the growth process is not successful. Here an alternative method is chosen: the doping after the growth by ion implantation. However, the doping by ion implantation goes always along with the creation of crystal defects. The defects have to be annihilated in order to reach an activation of th introduced dopants. At high ion fluences and ion masses the sputtering of surface atoms becomes more important. This results in a characteristic change in the morphology of the nanowires. In detail, the doping of ZnO and ZnS nanowires with color centers (manganese and rare earth elements) is demonstrated. Especially, the intra 3d luminescence of manganese implanted ZnS nanostructures shows a strong dependence of the nanowire diameter and morphology. This dependence can be described by expanding Foersters model (which describes an energy transfer to the color centers) by a dimensional parameter

  12. COCHLEAR IMPLANTATION PREVALENCE IN ELDERLY

    Directory of Open Access Journals (Sweden)

    A. V. Starokha

    2014-01-01

    Full Text Available Current paper describes an experience of cochlear implantation in elderly. Cochlear implantation has become a widely accepted intervention in the treatment of individuals with severe-to-profound sensorineural hearing loss. Cochlear implants are now accepted as a standard of care to optimize hearing and subsequent speech development in children and adults with deafness. But cochlear implantation affects not only hearing abilities, speech perception and speech production; it also has an outstanding impact on the social life, activities and self-esteem of each patient. The aim of this study was to evaluate the cochlear implantation efficacy in elderly with severe to profound sensorineural hearing loss. There were 5 patients under our observation. Surgery was performed according to traditional posterior tympanotomy and cochleostomy for cochlear implant electrode insertion for all observed patients. The study was conducted in two stages: before speech processor’s activation and 3 months later. Pure tone free field audiometry was performed to each patient to assess the efficiency of cochlear implantation in dynamics. The aim of the study was also to evaluate quality of life in elderly with severe to profound sensorineural hearing loss after unilateral cochlear implantation. Each patient underwent questioning with 36 Item Short Form Health Survey (SF-36. SF-36 is a set of generic, coherent, and easily administered quality-of-life measures. The SF-36 consists of eight scaled scores, which are the weighted sums of the questions in their section. Each scale is directly transformed into a 0-100 scale on the assumption that each question carries equal weight. The eight sections are: physical functioning; physical role functioning; emotional role functioning; vitality; emotional well-being; social role functioning; bodily pain; general health perceptions. Our results demonstrate that cochlear implantation in elderly consistently improved quality of life

  13. High throughput combinatorial screening of semiconductor materials

    Science.gov (United States)

    Mao, Samuel S.

    2011-11-01

    This article provides an overview of an advanced combinatorial material discovery platform developed recently for screening semiconductor materials with properties that may have applications ranging from radiation detectors to solar cells. Semiconductor thin-film libraries, each consisting of 256 materials of different composition arranged into a 16×16 matrix, were fabricated using laser-assisted evaporation process along with a combinatorial mechanism to achieve variations. The composition and microstructure of individual materials on each thin-film library were characterized with an integrated scanning micro-beam x-ray fluorescence and diffraction system, while the band gaps were determined by scanning optical reflection and transmission of the libraries. An ultrafast ultraviolet photon-induced charge probe was devised to measure the mobility and lifetime of individual thin-film materials on semiconductor libraries. Selected results on the discovery of semiconductors with desired band gaps and transport properties are illustrated.

  14. Hydrogen in ferromagnetic semiconductors for planar spintronics

    Science.gov (United States)

    Farshchi, Rouin

    This dissertation documents the use of hydrogen for controlling electrical and magnetic properties of ferromagnetic semiconductors, particularly GaMnAs. With minimal structural perturbation, hydrogen forms complexes with Mn acceptors and renders them neutral, thereby substantially increasing electrical resistivity and removing ferromagnetism. A major finding presented herein is that laser annealing can be used to controllably dissociate the Mn-H complexes and restore ferromagnetism. Structural, electrical, and magnetic effects of the laser activation process are thoroughly explored through experiments and numerical modeling. Local laser activation with tightly-focused ultra-short laser pulses allows for high-resolution direct-writing of ferromagnetic patterns in semiconductors, introducing a new paradigm for device design. Prospects for laser formation of high-temperature phases in ferromagnetic semiconductors are investigated. Finally, several device concepts incorporating the laser activation process are discussed as building blocks towards planar all-semiconductor spintronics.

  15. Absorption of light dark matter in semiconductors

    CERN Document Server

    Hochberg, Yonit; Zurek, Kathryn M

    2016-01-01

    Semiconductors are by now well-established targets for direct detection of MeV to GeV dark matter via scattering off electrons. We show that semiconductor targets can also detect significantly lighter dark matter via an absorption process. When the dark matter mass is above the band gap of the semiconductor (around an eV), absorption proceeds by excitation of an electron into the conduction band. Below the band gap, multi-phonon excitations enable absorption of dark matter in the 0.01 eV to eV mass range. Energetic dark matter particles emitted from the sun can also be probed for masses below an eV. We show that the reach for absorption of a relic kinetically mixed dark photon or pseudoscalar in semiconductors such as germanium or silicon can exceed current astrophysical and terrestrial constraints, with only a moderate exposure.

  16. Life-cycle assessment of semiconductors

    CERN Document Server

    Boyd, Sarah B

    2012-01-01

    Life-Cycle Assessment of Semiconductors presents the first and thus far only available transparent and complete life cycle assessment of semiconductor devices. A lack of reliable semiconductor LCA data has been a major challenge to evaluation of the potential environmental benefits of information technologies (IT). The analysis and results presented in this book will allow a higher degree of confidence and certainty in decisions concerning the use of IT in efforts to reduce climate change and other environmental effects. Coverage includes but is not limited to semiconductor manufacturing trends by product type and geography, unique coverage of life-cycle assessment, with a focus on uncertainty and sensitivity analysis of energy and global warming missions for CMOS logic devices, life cycle assessment of flash memory and life cycle assessment of DRAM. The information and conclusions discussed here will be highly relevant and useful to individuals and institutions. The book also: Provides a detailed, complete a...

  17. Plasmonic effects in metal-semiconductor nanostructures

    CERN Document Server

    Toropov, Alexey A

    2015-01-01

    Metal-semiconductor nanostructures represent an important new class of materials employed in designing advanced optoelectronic and nanophotonic devices, such as plasmonic nanolasers, plasmon-enhanced light-emitting diodes and solar cells, plasmonic emitters of single photons, and quantum devices operating in infrared and terahertz domains. The combination of surface plasmon resonances in conducting structures, providing strong concentration of an electromagnetic optical field nearby, with sharp optical resonances in semiconductors, which are highly sensitive to external electromagnetic fields, creates a platform to control light on the nanoscale. The design of the composite metal-semiconductor system imposes the consideration of both the plasmonic resonances in metal and the optical transitions in semiconductors - a key issue being their resonant interaction providing a coupling regime. In this book the reader will find descriptions of electrodynamics of conducting structures, quantum physics of semiconducto...

  18. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  19. Thermovoltaic semiconductor device including a plasma filter

    Science.gov (United States)

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  20. Second harmonic spectroscopy of semiconductor nanostructures

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Yu, Ping; Bozhevolnyi, Sergey I.

    1999-01-01

    Semiconductor nanostructures and their application to optoelectronic devices have attracted much attention recently. Lower-dimensional structures, and in particular quantum dots, are highly anisotropic resulting in broken symmetry as compared to their bulk counterparts. This is not only reflected...

  1. Analysis and simulation of semiconductor devices

    CERN Document Server

    Selberherr, Siegfried

    1984-01-01

    The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the s...

  2. Heteroepitaxy of semiconductors theory, growth, and characterization

    CERN Document Server

    Ayers, John E

    2007-01-01

    Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and la...

  3. High brightness semiconductor lasers with reduced filamentation

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter.; Skovgaard, Peter M. W.;

    1999-01-01

    High brightness semiconductor lasers have applications in spectroscopy, fiber lasers, manufacturing and materials processing, medicine and free space communication or energy transfer. The main difficulty associated with high brightness is that, because of COD, high power requires a large aperture...

  4. Cluster Implantation and Deposition Apparatus

    DEFF Research Database (Denmark)

    Hanif, Muhammad; Popok, Vladimir

    2015-01-01

    In the current report, a design and capabilities of a cluster implantation and deposition apparatus (CIDA) involving two different cluster sources are described. The clusters produced from gas precursors (Ar, N etc.) by PuCluS-2 can be used to study cluster ion implantation in order to develop...... contributions to the theory of cluster stopping in matter as well as for practical applications requiring ultra-shallow implantation and modification of surfaces on the nanoscale. Metal clusters from the magnetron cluster source are of interest for the production of optical sensors to detect specific biological...

  5. [Considerations for optimizing joint implants].

    Science.gov (United States)

    Tensi, H M; Orloff, S; Gese, H; Hooputra, H

    1994-09-01

    Despite the increasing use of orthopaedic implants, there is still a lack of adequate testing procedures and legal guidelines. Examples of the consequences of this neglect are given. Modern techniques for the calculation of stresses (finite element method [FEM]) and the prediction of life cycle duration are presented. Such methods, applied in the development and manufacturing phases of standard and special implants, may ensure an adequate prosthetic life cycle, with particular emphasis being placed on the biomedical optimization of the implant/bone interface and surrounding bone.

  6. Semiconductor saturable absorbers for ultrafast THz signals

    DEFF Research Database (Denmark)

    Hoffmann, Matthias C.; Turchinovich, Dmitry

    We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.......We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths....

  7. Small-signal analysis of granular semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Varpula, Aapo; Sinkkonen, Juha; Novikov, Sergey, E-mail: aapo.varpula@tkk.f [Department of Micro and Nanosciences, Aalto University, PO Box 13500, FI-00076 Aalto, Espoo (Finland)

    2010-11-01

    The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.

  8. A Semiconductor Microlaser for Intracavity Flow Cytometry

    Energy Technology Data Exchange (ETDEWEB)

    Akhil, O.; Copeland, G.C.; Dunne, J.L.; Gourley, P.L.; Hendricks, J.K.; McDonald, A.E.

    1999-01-20

    Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

  9. Photoelectrosynthesis and Photocatalysis at Semiconductor Electrodes.

    Science.gov (United States)

    1981-08-01

    x viologen ) should have as negative a redox potential as possible, con- sistent with rapid reaction with the photogenerated electron. It is unlikely...carrying out photoreactions. 1,2 For example, platinized TiO2 powder represents a short circuited photocell analogous to that of Figure 3. Light...point for a semiconductor/Pt system and b is for the semiconductor alone. The higher currents at the oper- ating point show that the platinized

  10. Work on the ATLAS semiconductor tracker barrel

    CERN Multimedia

    Maximilien Brice

    2005-01-01

    Precision work is performed on the semiconductor tracker barrel of the ATLAS experiment. All work on these delicate components must be performed in a clean room so that impurities in the air, such as dust, do not contaminate the detector. The semiconductor tracker will be mounted in the barrel close to the heart of the ATLAS experiment to detect the path of particles produced in proton-proton collisions.

  11. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  12. Nitride semiconductor devices fundamentals and applications

    CERN Document Server

    Morkoç, Hadis

    2013-01-01

    This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues that will enable them to follow the latest technological research. It also covers important applications, including LED and lighting, semiconductor lasers, high power switching devices, and detectors. This balanced and up-to-date treatment makes the text an essential educational tool for both advanced students and professionals in the electronics industry.

  13. Diffusion in semiconductors, other than silicon compilation

    CERN Document Server

    Fisher, David J

    2011-01-01

    Review from Book News Inc.: Summary reports of 337 experiments provide information on the diffusion of matter and heat in 31 materials used in semiconductors. Most of the compounds are based on cadmium, gallium, indium, lead, and zinc. Mercury telluride is included however, as is silicon carbide for some reason. Each article is thoroughly referenced to the authors and publication number, date, and page. The arrangement is alphabetical by semiconductor material. Indexes cover authors, hosts, and diffusants.

  14. The rational design of photocatalytic semiconductor nanoparticles

    OpenAIRE

    2014-01-01

    This thesis reports the successful rational design of three highly active photocatalytic semiconductor nanocrystal (SNC) systems by exploiting morphology effects and the electronic properties of type II semiconductor heterojunctions. Novel architectures of colloidal SNCs are produced with the aim of suppressing exciton recombination and improving charge extraction for the successful initiation of desirable redox chemistry. Rod-shaped niobium pentoxide Nb2O5 nanocrystals (NCs) are shown to...

  15. An introduction to single implant abutments.

    LENUS (Irish Health Repository)

    Warreth, Abdulhadi

    2013-01-01

    This article is an introduction to single implant abutments and aims to provide basic information about abutments which are essential for all dental personnel who are involved in dental implantology. Clinical Relevance: This article provides a basic knowledge of implants and implant abutments which are of paramount importance, as replacement of missing teeth with oral implants has become a well-established clinical procedure.

  16. Immediate implant loading: A case report

    OpenAIRE

    Dhamankar, Dilip; Gupta, Arun R.; Mahadevan, Janani

    2010-01-01

    Dental implants have long provided an excellent treatment option to restore edentulous spaces. Successful formation of a direct bone to implant interface is the goal in implant therapy. Immediate loading is an alternative to two stage surgical procedure. Improved surgical instrumentation implants design, and surface topography changes the concept of two stages surgical to one stage surgical procedure.

  17. Occlusion on oral implants: current clinical guidelines.

    Science.gov (United States)

    Koyano, K; Esaki, D

    2015-02-01

    Proper implant occlusion is essential for adequate oral function and the prevention of adverse consequences, such as implant overloading. Dental implants are thought to be more prone to occlusal overloading than natural teeth because of the loss of the periodontal ligament, which provides shock absorption and periodontal mechanoreceptors, which provide tactile sensitivity and proprioceptive motion feedback. Although many guidelines and theories on implant occlusion have been proposed, few have provided strong supportive evidence. Thus, we performed a narrative literature review to ascertain the influence of implant occlusion on the occurrence of complications of implant treatment and discuss the clinical considerations focused on the overloading factors at present. The search terms were 'dental implant', 'dental implantation', 'dental occlusion' and 'dental prosthesis'. The inclusion criteria were literature published in English up to September 2013. Randomised controlled trials (RCTs), prospective cohort studies and case-control studies with at least 20 cases and 12 months follow-up interval were included. Based on the selected literature, this review explores factors related to the implant prosthesis (cantilever, crown/implant ratio, premature contact, occlusal scheme, implant-abutment connection, splinting implants and tooth-implant connection) and other considerations, such as the number, diameter, length and angulation of implants. Over 700 abstracts were reviewed, from which more than 30 manuscripts were included. We found insufficient evidence to establish firm clinical guidelines for implant occlusion. To discuss the ideal occlusion for implants, further well-designed RCTs are required in the future.

  18. Ti-Ni ohmic contacts on 3C-SiC doped by nitrogen or phosphorus implantation

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, A.E., E-mail: anne-elisabeth.bazin@st.com [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Michaud, J.F. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Autret-Lambert, C. [Universite Francois Rabelais, Tours, Laboratoire d' Electrodynamique des Materiaux Avances CNRS-CEA-UMR6157, Parc de Grandmont, 37200 Tours (France); Cayrel, F. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Chassagne, T. [NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Portail, M. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications CNRS-UPR10, Rue Bernard Gregory, 06560 Valbonne (France); Zielinski, M. [NOVASiC, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex (France); Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France); Alquier, D. [Universite Francois Rabelais, Tours, Laboratoire de Microelectronique de Puissance, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2 (France)

    2010-07-25

    For electronic devices, good ohmic contacts are required. To achieve such contacts, the semiconductor layer has to be highly doped. The only method available to locally dope the SiC is to implant dopants in the epilayer through a mask. In this work, non-intentionally doped 3C-SiC epilayers were implanted using nitrogen or phosphorus at different energies and subsequently annealed at temperatures between 1150 deg. C and 1350 deg. C in order to form n{sup +} implanted layers. Different techniques such as Fourier Transformed InfraRed spectroscopy (FTIR), Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM) were used to characterize implanted 3C-SiC epilayers subsequently to the different annealing steps. Then, Ti-Ni contacts were carried out and the specific contact resistance ({rho}{sub C}) was determined by using circular Transfer Length Method (c-TLM) patterns. {rho}{sub C} values were investigated as a function of implanted species and contact annealing conditions, and compared to those obtained for highly doped 3C-SiC epilayers. As expected, {rho}{sub C} value is highly sensitive to post-implantation annealing. This work demonstrates that low resistance values can be achieved using nitrogen or phosphorus implantation at room temperature hence enabling device processing.

  19. Microwave annealing, a low-thermal-budget process for dopant activation in phosphorus-implanted MOSFET devices

    Science.gov (United States)

    Lim, Cheol-Min; Cho, Won-Ju

    2016-09-01

    In this work, we investigated a low-thermal-budget dopant activation process based on microwave annealing (MWA) of phosphorus ions implanted by plasma doping and compared the proposed technique with the conventional furnace annealing and the rapid thermal annealing processes. We fabricated p-n junction diodes and metal-oxide-semiconductor field-effect transistors (MOSFETs) on silicon and silicon-on-insulator substrates, respectively, in order to examine the dopant activation resulting from MWA. The investigated low-thermal-budget MWA technique proved effective for implanted dopant atom activation and diffusion suppression. In addition, a good interface property between the gate oxide and the silicon channel was achieved. Thus, low-thermal-budget MWA is a promising and effective method for the fabrication of highly-integrated semiconductor devices.

  20. Self Organization in Compensated Semiconductors

    Science.gov (United States)

    Berezin, Alexander A.

    2004-03-01

    In partially compensated semiconductor (PCS) Fermi level is pinned to donor sub-band. Due to positional randomness and almost isoenergetic hoppings, donor-spanned electronic subsystem in PCS forms fluid-like highly mobile collective state. This makes PCS playground for pattern formation, self-organization, complexity emergence, electronic neural networks, and perhaps even for origins of life, bioevolution and consciousness. Through effects of impact and/or Auger ionization of donor sites, whole PCS may collapse (spinodal decomposition) into microblocks potentially capable of replication and protobiological activity (DNA analogue). Electronic screening effects may act in RNA fashion by introducing additional length scale(s) to system. Spontaneous quantum computing on charged/neutral sites becomes potential generator of informationally loaded microstructures akin to "Carl Sagan Effect" (hidden messages in Pi in his "Contact") or informational self-organization of "Library of Babel" of J.L. Borges. Even general relativity effects at Planck scale (R.Penrose) may affect the dynamics through (e.g.) isotopic variations of atomic mass and local density (A.A.Berezin, 1992). Thus, PCS can serve as toy model (experimental and computational) at interface of physics and life sciences.

  1. Semiconductor eutectics for energy conversion

    Science.gov (United States)

    Yue, A. S.

    1983-04-01

    Directionally-oriented two-phase semiconducting eutectics are potential device-materials. A comprehensive search of the literature gives a list of semiconducting eutectic systems. Among these, the SnSe-SnSe2 was chosen for studies in detail. The SnSe-SnSe2 eutectic grown by the Bridgman technique has a multi-P/N-junction lamellar microstructure. Since its plasma frequency has not been detected within the infrared reflectance spectrum up to 40 micrometers of wavelength, it is, therefore, concluded that the SnSe-SnSe2 eutectic is a non-degenerate semiconductor. SnSe single crystals grown from the vapor phase have a hole concentration of 9.72 x 10(17) cm(+3) and a mobility of 154 cm(2)/sec-v at room temperature. This mobility is proportional to T/sup -1/3/ for T 1300 K and T/sup -2.25/ for T 1300 K. The index of reflection for SnSe single crystal has been determined froma wavelength of micrometers to a wavelength of 40 micrometers and was found to be 3.120 at 3 microns and 3.095 at 15 microns. A current-voltage characteristic expressed as I = I0 exp (qv/2.08 KT) was measured on a SnSe diode, which exhibits a negative resistance after the breakdown.

  2. Nanoelectronics in oxides and semiconductors

    Science.gov (United States)

    Cheng, Guanglei

    The success of silicon industry lies on three major properties of silicon, an easily formed oxide layer to allow field effect operation, tunability of carrier density and high device scalability. All these features exist in oxides, together with some novel properties such as ferroelectricity, magnetic effects and metal-insulator transition. With the recent development in material growth method including molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and reflection high energy electron diffraction (REED), atomically engineered oxide interfaces become available, thus opening the door to the novel oxide nanoelectronics. In this dissertation we create and study nanoelectronics in oxides, semiconductors and hybrid of these two. We used a conductive atomic force microscope tip to write single electron transistors in the 3-unit-cell-LaAlO 3/SrTiO3 heterostructure and observed ferroelectric tunneling behaviors. We also fabricated ferroelectric field transistors directly on silicon using strained SrTiO3 ferroelectric film and further confirmed the ferroelectric properties of this device. Meanwhile, we developed an ultrasensitive microwave capacitance sensor to study the electronic properties of self-assembled quantum dots and the switching mechanism of memristive devices. The integration of this sensor to a home made atomic force microscope provides an important tool to study the dielectric properties at nanoscale.

  3. Review of terahertz semiconductor sources

    Institute of Scientific and Technical Information of China (English)

    Feng Wei

    2012-01-01

    Terahertz (THz) technology can be used in information science,biology,medicine,astronomy,and environmental science.THz sources are the key devices in THz applications.The author gives a brief review of THz semiconductor sources,such as GaAs1-xNx Gunn-like diodes,quantum wells (QWs) negative-effectivemass (NEM) THz oscillators,and the THz quantum cascade lasers (QCLs).THz current self-oscillation in doped GaAs1-xNx diodes driven by a DC electric field was investigated.The current self-oscillation is associated with the negative differential velocity effect in the highly nonparabolic conduction band of this unique material system.The current self-oscillations and spatiotemporal current patterns in QW NEM p+pp+ diodes was studied by considering scattering contributions from impurities,acoustic phonons,and optic phonons.It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies.The NEM p+pp+ diode may be used as an electrically tunable THz source.Meanwhile,by using the Monte Carlo method,the device parameters ofresonant-phonon THz QCLs were optimized.The results show that the calculated gain is more sensitive to the injection barrier width,the doping concentration,and the phonon extraction level separation,which is consistent with the experiments.

  4. Review of terahertz semiconductor sources

    Science.gov (United States)

    Wei, Feng

    2012-03-01

    Terahertz (THz) technology can be used in information science, biology, medicine, astronomy, and environmental science. THz sources are the key devices in THz applications. The author gives a brief review of THz semiconductor sources, such as GaAs1-xNx Gunn-like diodes, quantum wells (QWs) negative-effective-mass (NEM) THz oscillators, and the THz quantum cascade lasers (QCLs). THz current self-oscillation in doped GaAs1-xNx diodes driven by a DC electric field was investigated. The current self-oscillation is associated with the negative differential velocity effect in the highly nonparabolic conduction band of this unique material system. The current self-oscillations and spatiotemporal current patterns in QW NEM p+pp+ diodes was studied by considering scattering contributions from impurities, acoustic phonons, and optic phonons. It is indicated that both the applied bias and the doping concentration strongly influence the patterns and self-oscillating frequencies. The NEM p+pp+ diode may be used as an electrically tunable THz source. Meanwhile, by using the Monte Carlo method, the device parameters of resonant-phonon THz QCLs were optimized. The results show that the calculated gain is more sensitive to the injection barrier width, the doping concentration, and the phonon extraction level separation, which is consistent with the experiments.

  5. Photoelectrochemistry of Semiconductor Nanowire Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  6. Spin Transport in Semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Domnita Catalina Marinescu

    2011-02-22

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  7. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer

  8. Miniscrew implant applications in contemporary orthodontics.

    Science.gov (United States)

    Chang, Hong-Po; Tseng, Yu-Chuan

    2014-03-01

    The need for orthodontic treatment modalities that provide maximal anchorage control but with minimal patient compliance requirements has led to the development of implant-assisted orthodontics and dentofacial orthopedics. Skeletal anchorage with miniscrew implants has no patient compliance requirements and has been widely incorporated in orthodontic practice. Miniscrew implants are now routinely used as anchorage devices in orthodontic treatment. This review summarizes recent data regarding the interpretation of bone data (i.e., bone quantity and quality) obtained by preoperative diagnostic computed tomography (CT) or by cone-beam computed tomography (CBCT) prior to miniscrew implant placement. Such data are essential when selecting appropriate sites for miniscrew implant placement. Bone characteristics that are indications and contraindications for treatment with miniscrew implants are discussed. Additionally, bicortical orthodontic skeletal anchorage, risks associated with miniscrew implant failure, and miniscrew implants for nonsurgical correction of occlusal cant or vertical excess are reviewed. Finally, implant stability is compared between titanium alloy and stainless steel miniscrew implants.

  9. Surgical Tooth Implants, Combat and Field.

    Science.gov (United States)

    1985-11-15

    placed over the top of the implant. Both anterior maxillary and posterior mandibular sites were included in this third group. I I 10 RESULTS Parametric...Twenty-nine patients ~ p 19. Abstract (Cont’d.) . .. .. were implanted/with posterior mandibular or anterior maxillary area implants. Eighteen or 62...placed flush with or below the alveolar crest. Twenty-nine patients were implanted with posterior mandibular or anterior maxillary area implants

  10. Implant rehabilitation in bruxism patient

    OpenAIRE

    Goiato, Marcelo Coelho; Sonego, Mariana Vilela; dos Santos, Daniela Micheline [UNESP; da Silva, Emily Vivianne Freitas

    2014-01-01

    A white female patient presented to the university clinic to obtain implant retained prostheses. She had an edentulous maxillary jaw and presented three teeth with poor prognosis (33, 34 and 43). The alveolar bone and the surrounding tissues were healthy. The patient did not report any relevant medical history contraindicating routine dental treatment or implant surgery, but self-reported a dental history of asymptomatic nocturnal bruxism. The treatment plan was set and two Branemark protocol...

  11. Novel Approach to Evaluation of Charging on Semiconductor Surface by Noncontact, Electrode-Free Capacitance/Voltage Measurement

    Science.gov (United States)

    Hirae, Sadao; Kohno, Motohiro; Okada, Hiroshi; Matsubara, Hideaki; Nakatani, Ikuyoshi; Kusuda, Tatsufumi; Sakai, Takamasa

    1994-04-01

    This paper describes a novel approach to the quantitative characterization of semiconductor surface charging caused by plasma exposures and ion implantations. The problems in conventional evaluation of charging are also discussed. Following the discussions above, the necessity of unified criteria is suggested for efficient development of systems or processes without charging damage. Hence, the charging saturation voltage between a top oxide surface and substrate, V s, and the charging density per unit area per second, ρ0, should be taken as criteria of charging behavior, which effectively represent the charging characteristics of both processes. The unified criteria can be obtained from the exposure time dependence of a net charging density on the thick field oxide. In order to determine V s and ρ0, the analysis using the C-V curve measured in a noncontact method with the metal-air-insulator-semiconductor (MAIS) technique is employed. The total space-charge density in oxide and its centroid can be determined at the same time by analyzing the flat-band voltage (V fb) of the MAIS capacitor as a function of the air gap. The net charge density can be obtained by analyzing the difference between the total space-charge density in oxide before and after charging. Finally, it is shown that charge damage of the large area metal-oxide-semiconductor (MOS) capacitor can be estimated from both V s and ρ0 which are obtained from results for a thick field oxide implanted with As+ and exposed to oxygen plasma.

  12. Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry

    Science.gov (United States)

    Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitry; Hartig, Carsten

    2016-03-01

    Optical metrology techniques such as ellipsometry and reflectometry are very powerful for routine process monitoring and control in the modern semiconductor manufacturing industry. However, both methods rely on optical modeling therefore, the optical properties of all materials in the stack need to be characterized a priori or determined during characterization. Some processes such as ion implantation and subsequent annealing produce slight variations in material properties within wafer, wafer-to-wafer, and lot-to-lot; such variation can degrade the dimensional measurement accuracy for both unpatterned optical measurements as well as patterned (2D and 3D) scatterometry measurements. These variations can be accounted for if the optical model of the structure under investigation allows one to extract not just dimensional but also material information already residing within the optical spectra. This paper focuses on modeling of ion implanted and annealed poly Si stacks typically used in high-k technology. Monitoring of ion implantation is often a blind spot in mass production due to capability issues and other limitations of common methods. Typically, the ion implantation dose can be controlled by research-grade ellipsometers with extended infrared range. We demonstrate that multi-channel spectroscopic reflectometry can also be used for ion implant monitoring in the mass-production environment. Our findings are applicable across all technology nodes.

  13. Nanostructured Surfaces of Dental Implants

    Directory of Open Access Journals (Sweden)

    Stefano Sivolella

    2013-01-01

    Full Text Available The structural and functional fusion of the surface of the dental implant with the surrounding bone (osseointegration is crucial for the short and long term outcome of the device. In recent years, the enhancement of bone formation at the bone-implant interface has been achieved through the modulation of osteoblasts adhesion and spreading, induced by structural modifications of the implant surface, particularly at the nanoscale level. In this context, traditional chemical and physical processes find new applications to achieve the best dental implant technology. This review provides an overview of the most common manufacture techniques and the related cells-surface interactions and modulation. A Medline and a hand search were conducted to identify studies concerning nanostructuration of implant surface and their related biological interaction. In this paper, we stressed the importance of the modifications on dental implant surfaces at the nanometric level. Nowadays, there is still little evidence of the long-term benefits of nanofeatures, as the promising results achieved in vitro and in animals have still to be confirmed in humans. However, the increasing interest in nanotechnology is undoubted and more research is going to be published in the coming years.

  14. Ion implanted dielectric elastomer circuits

    Science.gov (United States)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  15. The vestibular implant: Quo vadis?

    Directory of Open Access Journals (Sweden)

    Raymond eVan De Berg

    2011-08-01

    Full Text Available AbstractObjective: to assess the progress of the development of the vestibular implant and its feasibility short-term. Data sources: a search was performed in Pubmed, Medline and Embase. Key words used were vestibular prosth* and vestibular implant. The only search limit was language: English or Dutch. Additional sources were medical books, conference lectures and our personal experience with per-operative vestibular stimulation in patients selected for cochlear implantation.Study selection: all studies about the vestibular implant and related topics were included and evaluated by two reviewers. No study was excluded since every study investigated different aspects of the vestibular implant. Data extraction and synthesis: data was extracted by the first author from selected reports, supplemented by additional information, medical books conference lectures. Since each study had its own point of interest with its own outcomes, it was not possible to compare data of different studies. Conclusion: to use a basic vestibular implant in humans seems feasible in the very near future. Investigations show that electric stimulation of the canal nerves induces a nystagmus which corresponds to the plane of the canal which is innervated by the stimulated nerve branch. The brain is able to adapt to a higher baseline stimulation, while still reacting on a dynamic component. The best response will be achieved by a combination of the optimal stimulus (stimulus profile, stimulus location, precompensation, complemented by central vestibular adaptation. The degree of response will probably vary between individuals, depending on pathology and their ability to adapt.

  16. Retinal implants: a systematic review.

    Science.gov (United States)

    Chuang, Alice T; Margo, Curtis E; Greenberg, Paul B

    2014-07-01

    Retinal implants present an innovative way of restoring sight in degenerative retinal diseases. Previous reviews of research progress were written by groups developing their own devices. This systematic review objectively compares selected models by examining publications describing five representative retinal prostheses: Argus II, Boston Retinal Implant Project, Epi-Ret 3, Intelligent Medical Implants (IMI) and Alpha-IMS (Retina Implant AG). Publications were analysed using three criteria for interim success: clinical availability, vision restoration potential and long-term biocompatibility. Clinical availability: Argus II is the only device with FDA approval. Argus II and Alpha-IMS have both received the European CE Marking. All others are in clinical trials, except the Boston Retinal Implant, which is in animal studies. Vision restoration: resolution theoretically correlates with electrode number. Among devices with external cameras, the Boston Retinal Implant leads with 100 electrodes, followed by Argus II with 60 electrodes and visual acuity of 20/1262. Instead of an external camera, Alpha-IMS uses a photodiode system dependent on natural eye movements and can deliver visual acuity up to 20/546. Long-term compatibility: IMI offers iterative learning; Epi-Ret 3 is a fully intraocular device; Alpha-IMS uses intraocular photosensitive elements. Merging the results of these three criteria, Alpha-IMS is the most likely to achieve long-term success decades later, beyond current clinical availability.

  17. Cohesive energy of zincblende (A$^{III}$ B$^{V}$ and A$^{II}$B$^{VI}$) structured solids

    Indian Academy of Sciences (India)

    A S Verma; B K Sarkar; V K Jindal

    2010-05-01

    In this paper we present an expression relating the cohesive energy (coh in kcal/mol) of A$^{III}$B$^{V}$ and A$^{II}$ B$^{VI}$ semiconductors with the product of ionic charges ($Z_{1}Z_{2}$) and nearest-neighbour distance d (Å). The cohesive energy values of these solids exhibit a linear relationship when plotted on a log–log scale against the nearest-neighbour distance (Å), but fall on different straight lines according to the ionic charge product of the solids. A good agreement has been found between the experimental and calculated values of the cohesive energy of A$^{III}$B$^{V}$ and A$^{II}$B$^{VI}$ semiconductors.

  18. Electron-phonon interaction in a semiconductor quantum wire embedded into the semiconductor medium

    CERN Document Server

    Zharkoj, V P

    2002-01-01

    The renormalization of electron ground state energy due to the different types of interaction with confined (L) and interface (I) phonons in a semiconductor cylindrical quantum wire (QW) embedded into the semiconductor medium by the example of a HgS/CdS nanosystem.

  19. Diluted II-VI oxide semiconductors with multiple band gaps.

    Science.gov (United States)

    Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

    2003-12-12

    We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

  20. Imaging of common breast implants and implant-related complications: A pictorial essay

    Directory of Open Access Journals (Sweden)

    Amisha T Shah

    2016-01-01

    Full Text Available The number of women undergoing breast implant procedures is increasing exponentially. It is, therefore, imperative for a radiologist to be familiar with the normal and abnormal imaging appearances of common breast implants. Diagnostic imaging studies such as mammography, ultrasonography, and magnetic resonance imaging are used to evaluate implant integrity, detect abnormalities of the implant and its surrounding capsule, and detect breast conditions unrelated to implants. Magnetic resonance imaging of silicone breast implants, with its high sensitivity and specificity for detecting implant rupture, is the most reliable modality to asses implant integrity. Whichever imaging modality is used, the overall aim of imaging breast implants is to provide the pertinent information about implant integrity, detect implant failures, and to detect breast conditions unrelated to the implants, such as cancer.

  1. Why are mini-implants lost: The value of the implantation technique!

    Science.gov (United States)

    Romano, Fabio Lourenço; Consolaro, Alberto

    2015-01-01

    The use of mini-implants have made a major contribution to orthodontic treatment. Demand has aroused scientific curiosity about implant placement procedures and techniques. However, the reasons for instability have not yet been made totally clear. The aim of this article is to establish a relationship between implant placement technique and mini-implant success rates by means of examining the following hypotheses: 1) Sites of poor alveolar bone and little space between roots lead to inadequate implant placement; 2) Different sites require mini-implants of different sizes! Implant size should respect alveolar bone diameter; 3) Properly determining mini-implant placement site provides ease for implant placement and contributes to stability; 4) The more precise the lancing procedures, the better the implant placement technique; 5) Self-drilling does not mean higher pressures; 6) Knowing where implant placement should end decreases the risk of complications and mini-implant loss. PMID:25741821

  2. Quantum transport in semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kubis, Tillmann Christoph

    2009-11-15

    The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function method (NEGF) is a very general and all-inclusive scheme for the description of exactly this kind of transport problem. Although the NEGF formalism has been derived in the 1960's, textbooks about this formalism are still rare to find. Therefore, we introduce the NEGF formalism, its fundamental equations and approximations in the first part of this thesis. Thereby, we extract ideas of several seminal contributions on NEGF in literature and augment this by some minor derivations that are hard to find. Although the NEGF method has often been numerically implemented on transport problems, all current work in literature is based on a significant number of approximations with often unknown influence on the results and unknown validity limits. Therefore, we avoid most of the common approximations and implement in the second part of this thesis the NEGF formalism as exact as numerically feasible. For this purpose, we derive several new scattering self-energies and introduce new self-adaptive discretizations for the Green's functions and self-energies. The most important improvements of our NEGF implementation, however, affect the momentum and energy conservation during incoherent scattering, the Pauli blocking, the current conservation within and beyond the device and the reflectionless propagation through open device boundaries. Our uncommonly accurate implementation of the NEGF method allows us to analyze and assess most of the common approximations and to unveil numerical artifacts that have plagued previous approximate implementations in literature. Furthermore, we apply our numerical implementation of the NEGF method on the stationary electron transport in THz quantum cascade lasers (QCLs) and answer

  3. Cochlear implantation: a biomechanical prosthesis for hearing loss.

    Science.gov (United States)

    Yawn, Robert; Hunter, Jacob B; Sweeney, Alex D; Bennett, Marc L

    2015-01-01

    Cochlear implants are a medical prosthesis used to treat sensorineural deafness, and one of the greatest advances in modern medicine. The following article is an overview of cochlear implant technology. The history of cochlear implantation and the development of modern implant technology will be discussed, as well as current surgical techniques. Research regarding expansion of candidacy, hearing preservation cochlear implantation, and implantation for unilateral deafness are described. Lastly, innovative technology is discussed, including the hybrid cochlear implant and the totally implantable cochlear implant.

  4. Materials for endosseous dental implants.

    Science.gov (United States)

    Wataha, J C

    1996-02-01

    The goal of placement of endosseous dental implants is to achieve osseointegration or biointegration of the bone with the implant. A wide variety of materials has been used for these implants, but only a few promote osseointegration and biointegration. Titanium and titanium alloy (Ti6A14V) have been the most widely used of these materials. The surface oxide of titanium appears to be central to the ability of this material to osseointegrate. The oxide limits dissolution of elements and promotes the deposition of biological molecules which allow bone to exist as close as 30 A to the surface of the implant. The details of the ultrastructure of the gap between the implant and bone remain undefined, and the consequences of elements which are released on the interface over time are not known. These areas of investigation are particularly important in defining the differences between commercially pure titanium implants and those made of titanium, aluminium and vanadium. The epithelial interface between the gingiva and titanium appears to contain many of the structural characteristics of the native tooth-gingiva interface, but details are still vague. The connective tissue interface with the titanium appears to be one of tightly fitting tissues rather than adhesion. Ceramic coatings appear to improve the ingrowth of bone and promote chemical integration of the implant with the bone. The characteristics of these coatings are complex and affect the bony response, but the mechanisms remain obscure. The degradation of the coatings is an issue of particular controversy. Progress in dental implantology is likely to continue as the interface between the material and bone is more clearly understood, and biological molecules and artificial tissues are developed.

  5. Falha prematura em implantes orais = Early oral implant failures

    Directory of Open Access Journals (Sweden)

    Fadanelli, Alexandro Bianchi

    2005-01-01

    Full Text Available Atualmente, ainda há uma percentagem significativa de fracassos de implantes na prática clínica, causando transtorno para o profissional e para o paciente. O objetivo deste estudo foi avaliar a bibliografia disponível sobre o assunto, apresentar um caso clínico e discutir os aspectos relacionados aos insucessos na terapia com implantes ocorridos durante o período de osteointegração. A avaliação da literatura mostrou haverem múltiplos fatores possivelmente envolvidos nas falhas de implantes, sendo que através do estudo das falhas pode-se minimizar sua ocorrência

  6. Medical implants and methods of making medical implants

    Science.gov (United States)

    Shaw, Wendy J; Yonker, Clement R; Fulton, John L; Tarasevich, Barbara J; McClain, James B; Taylor, Doug

    2014-09-16

    A medical implant device having a substrate with an oxidized surface and a silane derivative coating covalently bonded to the oxidized surface. A bioactive agent is covalently bonded to the silane derivative coating. An implantable stent device including a stent core having an oxidized surface with a layer of silane derivative covalently bonded thereto. A spacer layer comprising polyethylene glycol (PEG) is covalently bonded to the layer of silane derivative and a protein is covalently bonded to the PEG. A method of making a medical implant device including providing a substrate having a surface, oxidizing the surface and reacting with derivitized silane to form a silane coating covalently bonded to the surface. A bioactive agent is then covalently bonded to the silane coating. In particular instances, an additional coating of bio-absorbable polymer and/or pharmaceutical agent is deposited over the bioactive agent.

  7. Lattice location of implanted As in ZnO

    CERN Document Server

    Wahl, U; Correia, J G; Marques, A C; Alves, E; Soares, J C

    2007-01-01

    Radioactive 73As ions were implanted into a ZnO single crystal at room temperature with 60 keV up to a fluence of 2×1013 cm−2. Subsequently, the angular emission channeling patterns of emitted conversion electrons were recorded by means of a position-sensitive detector in the as-implanted state and following annealing up to 900 C, and were compared to simulated emission yields for a variety of different lattice sites. We find that As does not occupy substitutional O sites, but mainly occupies the substitutional Zn sites. The fraction of As on O sites was at most a few per cent. Arsenic in ZnO is thus an interesting example of an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. Possible consequences with respect to the role of arsenic as a p-type dopant in ZnO are being discussed.

  8. Occlusal considerations for dental implant restorations.

    Science.gov (United States)

    Bergmann, Ranier H

    2014-01-01

    When placed, dental implants are put into an ever-changing oral environment in which teeth can continue to migrate. Yet, the implants themselves are ankylosed. This can lead to occlusal instability. Teeth may continue to erupt, leaving the implants in infraocclusion. Teeth may move mesially away from an implant, requiring modification to close an open contact point. Friction in the connection between teeth and implants can lead to intrusion of teeth and damage to the periodontal attachment apparatus. Implant occlusion with shallow incisal guidance minimizes lateral and tipping forces. Cross-arch stabilization allows the best distribution of occlusal forces. The choice of restorative materials influences long-term occlusal stability.

  9. Implantes transcigomáticos

    Directory of Open Access Journals (Sweden)

    B. Fernández Ateca

    Full Text Available Los implantes cigomáticos, originariamente diseñados por Branemark en 1989, son implantes de cabeza en 45 grados, de 4'5 milímetros de diámetro en su parte más ancha, y que pueden medir entre 30 y 50 milímetros de longitud. Se insertan desde la parte palatina del proceso alveolar, siguiendo la cresta cigomática-alveolar hasta anclarse en el cuerpo del malar, y en el caso de pacientes maxilectomizados, entrando directamente en el cuerpo del malar. Estos implantes ofrecen una alternativa más al cirujano en el momento de planificar un tratamiento protésico-rehabilitador implantosoportado. Sobretodo, en aquellos pacientes con un maxilar superior atrófico en el que no se pueden realizar injertos óseos o estos han fracasado. El objetivo de este artículo es proponer el protocolo quirúrgico de colocación de los implantes trascigomáticos y revisar la literatura actual sobre la evolución clínica de estos implantes.

  10. High-Temperature Ferromagnetism in Transition Metal Implanted Wide-Bandgap Semiconductors

    Science.gov (United States)

    2005-07-01

    for which calculations were performed [100]. Uspenskii et al. also performed ab initio calculations concerning the energy-related preference of a DMS...xCrxO (x = 0.25) [100]. A-2 In the case of Cr-doped ZnO, Uspenskii et al. found the preferred mag- netic ordering to be ferromagnetic. In the case... Uspenskii et al. also reported a ground state preference for antiferro- magnetic ordering for the case of Zn0.875Mn0.125O [131]. Dietl et al. have

  11. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    1996-01-01

    Fundamentals of Semiconductors attempts to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors The approach is physical and intuitive rather than formal and pedantic Theories are presented to explain experimental results This textbook has been written with both students and researchers in mind Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors The explanations are based on physical insights Each chapter is enriched by an extensive collection of tables of material parameters, figures and problems Many of these problems 'lead the student by the hand' to arrive at the results

  12. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2010-01-01

    This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems...

  13. Diluted magnetic semiconductors with narrow band gaps

    Science.gov (United States)

    Gu, Bo; Maekawa, Sadamichi

    2016-10-01

    We propose a method to realize diluted magnetic semiconductors (DMSs) with p - and n -type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2 , which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2 , of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2 , the Tc of which was up to 230 K in a recent experiment.

  14. Charge-transfer processes in semiconductor colloids

    Science.gov (United States)

    Kamat, Prashant V.; Gopidas, K. R.

    1990-04-01

    A picosecond transient absorption spectroscopy technique has been employed to probe the charge transfer processes in Ti02 semiconductor colloids. The trapping of electrons at the TiO surface (Ti4+ sitesY was characterized from the appearance of a broad absorption in the region of 550-750 nm following the 355-nm laser pulse excitation of Ti02 colloids. The lifetime of these trapped charge carriers increased upon incorporation of a hole scavenger in the colloidal semiconductor system. The mechanistic and kinetic details of the charge injection from excited CdS into a large bandgap semiconductor such as AgI and Ti02 have also been inves-' t i ga ted.

  15. Developing New Nanoprobes from Semiconductor Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  16. Band structure engineering in organic semiconductors

    Science.gov (United States)

    Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A.; Kasemann, Daniel; Andrienko, Denis; Leo, Karl

    2016-06-01

    A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors.

  17. Slow and fast light in semiconductor waveguides

    DEFF Research Database (Denmark)

    Mørk, Jesper; Hansen, Per Lunnemann; Xue, Weiqi

    2010-01-01

    Investigations of slow and fast light effects in semiconductor waveguides entail interesting physics and point to a number of promising applications. In this review we give an overview of recent progress in the field, in particular focusing on the physical mechanisms of electromagnetically induced...... transparency and coherent population oscillations. While electromagnetically induced transparency has been the most important effect in realizing slowdown effects in atomic gasses, progress has been comparatively slow in semiconductors due to inherent problems of fast dephasing times and inhomogeneous...... broadening in quantum dots. The physics of electromagnetically induced transparency in semiconductors is discussed, emphasizing these limitations and recent suggestions for overcoming them. On the other hand, the mechanism of coherent population oscillations relies on wave mixing effects and is well suited...

  18. International Semiconductor Device Research Symposium (ISDRS-91)

    Science.gov (United States)

    Shur, Michael

    1992-03-01

    The First International Semiconductor Device Research Symposium (ISDRS-91) took place in Charlottesville, Va on December 4-6, 1991 for the purpose of providing a convenient forum for the exchange of information and new ideas for researchers from industry, university, and government laboratories with leading researchers from the United States, Canada, Europe, Asia, and the former Soviet Union. As the first international conference of its kind to take place after the August 1991 coup attempt in the Soviet Union, it was unique with the presence of an unusually large contingent of Russian scientists. The emphasis of the program was on novel ideas such as advanced semiconductor technologies still in their infancy whose tangible technological outcomes are not expected for another five to ten years. Some of the technologies discussed at the symposium included bandgap engineering, large area semiconductor electronics, new millimeter wave and opto-electronics technologies, and silicon carbide and diamond devices.

  19. Engineering optical properties of semiconductor metafilm superabsorbers

    Science.gov (United States)

    Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung; Brongersma, Mark L.

    2016-04-01

    Light absorption in ultrathin layer of semiconductor has been considerable interests for many years due to its potential applications in various optical devices. In particular, there have been great efforts to engineer the optical properties of the film for the control of absorption spectrums. Whereas the isotropic thin films have intrinsic optical properties that are fixed by materials' properties, metafilm that are composed by deep subwavelength nano-building blocks provides significant flexibilities in controlling the optical properties of the designed effective layers. Here, we present the ultrathin semiconductor metafilm absorbers by arranging germanium (Ge) nanobeams in deep subwavelength scale. Resonant properties of high index semiconductor nanobeams play a key role in designing effective optical properties of the film. We demonstrate this in theory and experimental measurements to build a designing rule of efficient, controllable metafilm absorbers. The proposed strategy of engineering optical properties could open up wide range of applications from ultrathin photodetection and solar energy harvesting to the diverse flexible optoelectronics.

  20. Optical Biosensors Based on Semiconductor Nanostructures

    Directory of Open Access Journals (Sweden)

    Raúl J. Martín-Palma

    2009-06-01

    Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

  1. Reliability and radiation effects in compound semiconductors

    CERN Document Server

    Johnston, Allan

    2010-01-01

    This book discusses reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. Johnston's perspective in the book focuses on high-reliability applications in space, but his discussion of reliability is applicable to high reliability terrestrial applications as well. The book is important because there are new reliability mechanisms present in compound semiconductors that have produced a great deal of confusion. They are complex, and appear to be major stumbling blocks in the application of these types of devices. Many of the reliability problems that were prominent research topics five to ten years ago have been solved, and the reliability of many of these devices has been improved to the level where they can be used for ten years or more with low failure rates. There is also considerable confusion about the way that space radiation affects compound semiconductors. Some optoelectronic devices are so sensitive to damage in space that they are very difficu...

  2. Hybrid system of semiconductor and photosynthetic protein.

    Science.gov (United States)

    Kim, Younghye; Shin, Seon Ae; Lee, Jaehun; Yang, Ki Dong; Nam, Ki Tae

    2014-08-29

    Photosynthetic protein has the potential to be a new attractive material for solar energy absorption and conversion. The development of semiconductor/photosynthetic protein hybrids is an example of recent progress toward efficient, clean and nanostructured photoelectric systems. In the review, two biohybrid systems interacting through different communicating methods are addressed: (1) a photosynthetic protein immobilized semiconductor electrode operating via electron transfer and (2) a hybrid of semiconductor quantum dots and photosynthetic protein operating via energy transfer. The proper selection of materials and functional and structural modification of the components and optimal conjugation between them are the main issues discussed in the review. In conclusion, we propose the direction of future biohybrid systems for solar energy conversion systems, optical biosensors and photoelectric devices.

  3. Semiconductor materials for solar photovoltaic cells

    CERN Document Server

    Wong-Ng, Winnie; Bhattacharya, Raghu

    2016-01-01

    This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing.  Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost.  Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce ...

  4. Semimetal/Semiconductor Nanocomposites for Thermoelectrics

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Hong [Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Burke, Peter G. [Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Gossard, Arthur C. [Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Zeng, Gehong [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering; Ramu, Ashok T. [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering; Bahk, Je-Hyeong [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering; Bowers, John E. [Univ. of California, Santa Barbara, CA (United States). Dept. of Electrical and Computer Engineering

    2011-04-15

    In this work, we present research on semimetal-semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III-V semiconductors embedded with semimetallic rare earth-group V (RE-V) compounds, but focus is given here to ErSb:InxGa1-xSb as a promising p-type thermoelectric material. Nano­structures of RE-V compounds are formed and embedded within the III-V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n-type and p-type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er-containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.

  5. Collective excitations of spherical semiconductor nanoparticles

    Science.gov (United States)

    Moradi, Afshin

    2016-10-01

    In this article, we study the dispersion properties of bulk and surface electrostatic oscillations of a spherical quantum electron-hole semiconductor plasma as a simple model of a semiconductor nanoparticle. We derive general dispersion relation for both bulk and surface modes, using quantum hydrodynamic theory (including the electrons and holes quantum recoil effects, quantum statistical pressures of the plasma species, as well as exchange and correlation effects) in conjunction with Poisson’s equation and appropriate boundary conditions. We show that for the arbitrary value of angular quantum number {\\ell }≥slant 1 there are only two surface plasmon modes, but two infinite series of bulk modes for {\\ell }≥slant 0 that owe their existence to the curvature of the interface. We use the typical values of GaAs semiconductor to compute the bulk and surface mode frequencies for different value of {\\ell }.

  6. Vertical external cavity surface emitting semiconductor lasers

    CERN Document Server

    Holm, M

    2001-01-01

    Active stabilisation showed a relative locked linewidth of approx 3 kHz. Coarse tuning over 7 nm was achieved using a 3-plate birefingent filter plate while fine-tuning using cavity length change allowed tuning over 250 MHz. Vertical external cavity semiconductor lasers have emerged as an interesting technology based on current vertical cavity semiconductor laser knowledge. High power output into a single transverse mode has attracted companies requiring good fibre coupling for telecommunications systems. The structure comprises of a grown semiconductor Bragg reflector topped with a multiple quantum well gain region. This is then included in an external cavity. This device is then optically pumped to promote laser action. Theoretical modelling of AIGaAs based VECSEL structures was undertaken, showing the effect of device design on laser characteristics. A simple 3-mirror cavity was constructed to assess the static characteristics of the structure. Up to 153 mW of output power was achieved in a single transver...

  7. Contact dermatitis after implantable cardiac defibrillator implantation for ventricular tachycardia.

    Science.gov (United States)

    Dogan, Pinar; Inci, Sinan; Kuyumcu, Mevlut Serdar; Kus, Ozgur

    2016-02-01

    Pacemaker contact sensitivity is a rare condition. Less than 30 reports of pacemaker skin reactions have been described. We report a 57-year-old woman who underwent an implantable cardiac defibrillator (ICD) implantation for ventricular tachycardia. A skin patch test was positive on almost all components of the pacemaker system. She was treated with topical corticosteroids and skin lesions resolved within 2 weeks. Because of widespread use of various devices, we will see this more often and therefore it is important to recognize this problem and its effective management.

  8. PROPERTIES OF DEFECTS AND IMPLANTS IN Mg+ IMPLANTED SILICON CARBIDE

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Zhu, Zihua; Varga, Tamas; Bowden, Mark E.; Manandhar, Sandeep; Roosendaal, Timothy J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2013-09-25

    As a candidate material for fusion reactor designs, silicon carbide (SiC) under high-energy neutron irradiation undergoes atomic displacement damage and transmutation reactions that create magnesium as one of the major metallic products. The presence of Mg and lattice disorder in SiC is expected to affect structural stability and degrade thermo-mechanical properties that could limit SiC lifetime for service. We have initiated a combined experimental and computational study that uses Mg+ ion implantation and multiscale modeling to investigate the structural and chemical effects in Mg implanted SiC and explore possible property degradation mechanisms.

  9. EDITORIAL: The 21st Nordic Semiconductor Meeting

    Science.gov (United States)

    2006-09-01

    This Topical Issue contains works presented at the 21st Nordic Semiconductor Meeting (21NSM) held at Sundvolden, Norway, 18-19 August 2005. The institutions supporting 21NSM were: University of Oslo, SINTEF, the Norwegian Defense Research Establishment and Vestfold University College. The Nordic Semiconductor Meeting has become an international forum that has been held every other year in a relay fashion in Denmark, Finland, Iceland, Norway and Sweden. The focus of the meeting has been on original research and science being carried out on semiconductor materials, devices and systems. Reports on industrial activity have usually been featured at the meetings. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. For the last five meetings the proceedings have been printed in a dedicated volume of Physica Scripta in the Topical Issue series. The papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the expected high standards of the series. The range of topics covered by this volume is broad, reflecting the call for papers; most of the papers have an element of materials science and the largest portion of these deal with other semiconductor materials other than silicon. The 21NSM was supported by the following sponsors: Renewable Energy Corporation (REC), EMF III-V Innovations (EMF), and the Nordic Research Board (NordForsk). Terje G Finstad Department of Physics, University of Oslo, Norway Andrej Y Kuznetsov and Bengt G Svensson Centre for Materials Science and Nanotechnology, University of Oslo, Norway

  10. 75 FR 51843 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Science.gov (United States)

    2010-08-23

    ... Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products Containing the Same... certain large scale integrated circuit semiconductor chips and products containing same by reason of... including the following: Freescale Semiconductor Xiqing Integrated Semiconductor Manufacturing...

  11. Electroplated Ni on the PN Junction Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jin Joo; Uhm, Young Rang; Son, Kwang Jae; Kim, Jong Bum; Choi, Sang Moo; Park, Jong Han; Hong, Jintae [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2015-05-15

    Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a Ni-63 plating condition on the PN junction semiconductor needed for production of betavoltaic battery. PN junction semiconductors with a Ni seed layer of 500 and 1000 A were coated with Ni at current density from 10 to 50 mA cm{sup 2}. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased.

  12. Nano-semiconductors devices and technology

    CERN Document Server

    Iniewski, Krzysztof

    2011-01-01

    With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry's transition from standard CMOS silicon to novel device structures--including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials--this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution

  13. Carrier scattering in metals and semiconductors

    CERN Document Server

    Gantmakher, VF

    1987-01-01

    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental

  14. SCOOP - Semiconductor COmponents for Optical signal Processing

    DEFF Research Database (Denmark)

    Mørk, Jesper; Yvind, Kresten; Oxenløwe, Leif Katsuo;

    2001-01-01

    Opto-electronic semiconductor devices operating at very high bitrates play a central role in the continued expansion of the transmission capacity of optical communication systems. A number of different devices based on quantum well structures have been manufactured within the framework of the nat......Opto-electronic semiconductor devices operating at very high bitrates play a central role in the continued expansion of the transmission capacity of optical communication systems. A number of different devices based on quantum well structures have been manufactured within the framework...... of the national SCOOP programme. Results for a high-speed modulator, a short-pulse laser and an all-optical switch are presented....

  15. Quantum theory of electroabsorption in semiconductor nanocrystals.

    Science.gov (United States)

    Tepliakov, Nikita V; Leonov, Mikhail Yu; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D

    2016-01-25

    We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of noninteracting electrons and holes in an infinitely deep quantum well and describes all the major features of electroabsorption, including the Stark effect, the Franz-Keldysh effect, and the field-induced spectral broadening. It is applicable to nanocrystals of different shapes and dimensions (quantum dots, nanorods, and nanoplatelets), and will prove useful in modeling and design of electrooptical devices based on ensembles of semiconductor nanocrystals.

  16. Semiconductor strain metrology principles and applications

    CERN Document Server

    Wong, Terence KS

    2012-01-01

    This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterization. This e-book employs a tutorial approach to explain the principles and applications of each technique specifically tailored for graduate students and postdoctoral researchers. Selected topics include optical, electron beam, ion beam and synchrotron x-ray techniques. Unlike earlier references, this e-book specifically discusses strain metrol

  17. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  18. Effect of gain nonlinearity in semiconductor lasers

    DEFF Research Database (Denmark)

    Jensen, Niels H.; Christiansen, Peter Leth; Skovgaard, Ove

    1988-01-01

    Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensi......Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2...

  19. Cryogenic semiconductor high-intensity radiation monitors

    CERN Document Server

    Palmieri, V G; Borer, K; Casagrande, L; Da Vià, C; Devine, S R H; Dezillie, B; Esposito, A; Granata, V; Hauler, F; Jungermann, L; Li, Z; Lourenço, C; Niinikoski, T O; O'Shea, V

    2003-01-01

    This paper describes a novel technique to monitor high-intensity particle beams by means of a semiconductor detector. It consists of cooling a semiconductor detector down to cryogenic temperature to suppress the thermally generated leakage current and to precisely measure the integrated ionization signal. It will be shown that such a device provides very good linearity and a dynamic range wider than is possible with existing techniques. Moreover, thanks to the Lazarus effect, extreme radiation hardness can be achieved providing in turn absolute intensity measurements against precise calibration of the device at low beam flux.

  20. Micromotion of Dental Implants: Basic Mechanical Considerations

    Directory of Open Access Journals (Sweden)

    Werner Winter

    2013-01-01

    Full Text Available Micromotion of dental implants may interfere with the process of osseointegration. Using three different types of virtual biomechanical models, varying contact types between implant and bone were simulated, and implant deformation, bone deformation, and stress at the implant-bone interface were recorded under an axial load of 200 N, which reflects a common biting force. Without friction between implant and bone, a symmetric loading situation of the bone with maximum loading and displacement at the apex of the implant was recorded. The addition of threads led to a decrease in loading and displacement at the apical part, but loading and displacement were also observed at the vertical walls of the implants. Introducing friction between implant and bone decreased global displacement. In a force fit situation, load transfer predominantly occurred in the cervical area of the implant. For freshly inserted implants, micromotion was constant along the vertical walls of the implant, whereas, for osseointegrated implants, the distribution of micromotion depended on the location. In the cervical aspect some minor micromotion in the range of 0.75 μm could be found, while at the most apical part almost no relative displacement between implant and bone occurred.

  1. Ion implantation of superhard ceramic cutting tools

    Science.gov (United States)

    Chou, Y. Kevin; Liu, Jie

    2004-08-01

    Despite numerous reports of tool life increase by ion implantation in machining operations, ion implantation applications of cutting tools remain limited, especially for ceramic tools. Mechanisms of tool-life improvement by implantation are not clearly established due to complexity of both implantation and tool-wear processes. In an attempt to improve performance of cubic boron nitride (CBN) tools for hard machining by ion implantation, a literature survey of ion-implanted cutting tools was carried out with a focus on mechanisms of tool-wear reduction by ion implantation. Implantation and machining experiments were then conducted to investigate implantation effects on CBN tools in hard machining. A batch of CBN tools was implanted with nitrogen ions at 150 keV and 2.5×1017 ions/cm2 and further used to cut 61 HRc AISI 52100 steel at different conditions. Results show that ion implantation has strong effects on partsurface finish, moderate effect on cutting forces, but an insignificant impact on tool wear. Friction coefficients, estimated from measured cutting forces, are possibly reduced by ion implantation, which may improve surface finish. However, surprisingly, 2-D orthogonal cutting to evaluate tribological loading in hard machining showed no difference on contact stresses and friction coefficients between implanted and nonimplanted CBN tools.

  2. Implant rehabilitation in bruxism patient

    Science.gov (United States)

    Goiato, Marcelo Coelho; Sonego, Mariana Vilela; dos Santos, Daniela Micheline; da Silva, Emily Vivianne Freitas

    2014-01-01

    A white female patient presented to the university clinic to obtain implant retained prostheses. She had an edentulous maxillary jaw and presented three teeth with poor prognosis (33, 34 and 43). The alveolar bone and the surrounding tissues were healthy. The patient did not report any relevant medical history contraindicating routine dental treatment or implant surgery, but self-reported a dental history of asymptomatic nocturnal bruxism. The treatment plan was set and two Branemark protocols supported by six implants in each arch were installed after a 6-month healing period. A soft occlusal splint was made due to the patient's history of bruxism, and the lack of its use by the patient resulted in an acrylic fracture. The prosthesis was repaired and the importance of using the occlusal splint was restated. In the 4-year follow-up no fractures were reported. PMID:24907215

  3. Tinting of intraocular lens implants

    Energy Technology Data Exchange (ETDEWEB)

    Zigman, S.

    1982-06-01

    Intraocular lens (IOL) implants of polymethyl methacrylate (PMMA) lack an important yellow pigment useful as a filter in the visual process and in the protection of the retina from short-wavelength radiant energy. The ability to produce a yellow pigment in the PMMA used in IOL implants by exposure to near-ultraviolet (UV) light was tested. It was found that the highly cross-linked material in Copeland lens blanks was tinted slightly because of this exposure. The absorptive properties of lens blanks treated with near-UV light in this way approached that of the absorptive properties of human lenses. This finding shows that it is possible to alter IOL implants simply so as to induce a pale-yellow pigment in them to improve the visual process and to protect the retinas of IOL users.

  4. Surgical Complications of Cochlear Implantation

    Directory of Open Access Journals (Sweden)

    Basir Hashemi

    2010-03-01

    Full Text Available Cochlear implantation is a method used for the treatment ofpatients with profound hearing loss. This procedure may theaccompanied by some major or minor complications. Weevaluated the surgical complications of cochlear implantationin Fars province (south of Iran. A total of 150 patients withcochlear implantation were enrolled in the present study. Mostof the patients were pre-lingual children and most of our deviceswere nucleus prosthesis. We had three device failuresand four major complications, including one misplaced electrode,one case of meningitis, one case of foreign body reactionto suture and one case with extensive hematoma. Thesecomplications were managed successfully by surgical interventionor re-implantation. Facial nerve damage or woundbreakdown was not seen. Minor complications including smallhematoma, edema, stitch infection and dizziness were found in15 cases, which were managed medically. In our center, therate of minor complications was comparable to other centersin the world. But the rate of major surgical complications waslower than other centers.

  5. MRI of orbital hydroxyapatite implants

    Energy Technology Data Exchange (ETDEWEB)

    Flanders, A.E. [Dept. of Radiology, Thomas Jefferson Univ. Hospital, Philadelphia, PA (United States); De Potter, P. [Dept. of Ophthalmology, Wills Eye Inst., Philadelphia, PA (United States); Rao, V.M. [Dept. of Radiology, Thomas Jefferson Univ. Hospital, Philadelphia, PA (United States); Tom, B.M. [Dept. of Radiology, Thomas Jefferson Univ. Hospital, Philadelphia, PA (United States); Shields, C.L. [Dept. of Ophthalmology, Wills Eye Inst., Philadelphia, PA (United States); Shields, J.A. [Dept. of Ophthalmology, Wills Eye Inst., Philadelphia, PA (United States)

    1996-04-01

    Our aim was to use MRI for the postsurgical assessment of a new form of integrated orbital implant composed of a porous calcium phosphate hydroxyapatite substrate. We studied ten patients 24-74 years of age who underwent enucleation and implantation of a hydroxyapatite ball; 5-13 months after surgery, each patient was examined by spin-echo MRI, with fat suppression and gadolinium enhancement. Fibrovascular ingrowth was demonstrated in all ten patients as areas of enhancement at the periphery of the hydroxyapatite sphere that extended to the center to a variable degree. The radiologist should aware of the MRI appearances of the coralline hydroxyapatite orbital implant since it is now widely used following enucleation. MRI is a useful means to determine successful incorporation of the substrate into the orbital tissues. The normal pattern of contrast enhancement should not be mistaken for recurrent tumor or infection. (orig.)

  6. Enhancement in open-circuit voltage of implantable CMOS-compatible glucose fuel cell by improving the anodic catalyst

    Science.gov (United States)

    Niitsu, Kiichi; Ando, Takashi; Kobayashi, Atsuki; Nakazato, Kazuo

    2017-01-01

    This paper presents an implantable CMOS-compatible glucose fuel cell that generates an open-circuit voltage (OCV) of 880 mV. The developed fuel cell is solid-catalyst-based and manufactured from biocompatible materials; thus, it can be implanted to the human body. Additionally, since the cell can be manufactured using a semiconductor (CMOS) fabrication process, it can also be manufactured together with CMOS circuits on a single silicon wafer. In the literature, an implantable CMOS-compatible glucose fuel cell has been reported. However, its OCV is 192 mV, which is insufficient for CMOS circuit operation. In this work, we have enhanced the performance of the fuel cell by improving the electrocatalytic ability of the anode. The prototype with the newly proposed Pt/carbon nanotube (CNT) anode structure successfully achieved an OCV of 880 mV, which is the highest ever reported.

  7. A glucose fuel cell for implantable brain-machine interfaces.

    Directory of Open Access Journals (Sweden)

    Benjamin I Rapoport

    Full Text Available We have developed an implantable fuel cell that generates power through glucose oxidation, producing 3.4 μW cm(-2 steady-state power and up to 180 μW cm(-2 peak power. The fuel cell is manufactured using a novel approach, employing semiconductor fabrication techniques, and is therefore well suited for manufacture together with integrated circuits on a single silicon wafer. Thus, it can help enable implantable microelectronic systems with long-lifetime power sources that harvest energy from their surrounds. The fuel reactions are mediated by robust, solid state catalysts. Glucose is oxidized at the nanostructured surface of an activated platinum anode. Oxygen is reduced to water at the surface of a self-assembled network of single-walled carbon nanotubes, embedded in a Nafion film that forms the cathode and is exposed to the biological environment. The catalytic electrodes are separated by a Nafion membrane. The availability of fuel cell reactants, oxygen and glucose, only as a mixture in the physiologic environment, has traditionally posed a design challenge: Net current production requires oxidation and reduction to occur separately and selectively at the anode and cathode, respectively, to prevent electrochemical short circuits. Our fuel cell is configured in a half-open geometry that shields the anode while exposing the cathode, resulting in an oxygen gradient that strongly favors oxygen reduction at the cathode. Glucose reaches the shielded anode by diffusing through the nanotube mesh, which does not catalyze glucose oxidation, and the Nafion layers, which are permeable to small neutral and cationic species. We demonstrate computationally that the natural recirculation of cerebrospinal fluid around the human brain theoretically permits glucose energy harvesting at a rate on the order of at least 1 mW with no adverse physiologic effects. Low-power brain-machine interfaces can thus potentially benefit from having their implanted units

  8. Semiconductor nanostructures for optoelectronic devices processing, characterization and applications

    CERN Document Server

    Yi, Gyu-Chul

    2012-01-01

    This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.

  9. UNIQUENESS OF SOLUTIONS FOR SEMICONDUCTOR EQUATIONS WITH AVALANCHE TERM

    Institute of Scientific and Technical Information of China (English)

    Xing Jiasheng; Wang Yuanming

    2000-01-01

    In this paper, we consider the initial and mixed boundary value problems for the semiconductor equations with avalanche term, the uniqueness of the weak solution for the semiconductor equation has been proved.

  10. Effective Linewidth of Semiconductor Lasers for Coherent Optical Data Links

    DEFF Research Database (Denmark)

    Iglesias Olmedo, Miguel; Pang, Xiaodan; Schatz, Richard

    2016-01-01

    We discuss the implications of using monolithically integrated semiconductor lasers in high capacity optical coherent links suitable for metro applications, where the integration capabilities of semiconductor lasers make them an attractive candidate to reduce transceiver cost. By investigating se...

  11. Application of superconductor-semiconductor Schottky barrier for electron cooling

    Energy Technology Data Exchange (ETDEWEB)

    Savin, Alexander; Prunnila, Mika; Ahopelto, Jouni; Kivinen, Pasi; Toermae, Paeivi; Pekola, Jukka

    2003-05-01

    Electronic cooling in superconductor-semiconductor-superconductor structures at sub kelvin temperatures has been demonstrated. Effect of the carrier concentration in the semiconductor on performance of the micro-cooler has been investigated.

  12. Carbon Fiber Biocompatibility for Implants

    Directory of Open Access Journals (Sweden)

    Richard Petersen

    2016-01-01

    Full Text Available Carbon fibers have multiple potential advantages in developing high-strength biomaterials with a density close to bone for better stress transfer and electrical properties that enhance tissue formation. As a breakthrough example in biomaterials, a 1.5 mm diameter bisphenol-epoxy/carbon-fiber-reinforced composite rod was compared for two weeks in a rat tibia model with a similar 1.5 mm diameter titanium-6-4 alloy screw manufactured to retain bone implants. Results showed that carbon-fiber-reinforced composite stimulated osseointegration inside the tibia bone marrow measured as percent bone area (PBA to a great extent when compared to the titanium-6-4 alloy at statistically significant levels. PBA increased significantly with the carbon-fiber composite over the titanium-6-4 alloy for distances from the implant surfaces of 0.1 mm at 77.7% vs. 19.3% (p < 10−8 and 0.8 mm at 41.6% vs. 19.5% (p < 10−4, respectively. The review focuses on carbon fiber properties that increased PBA for enhanced implant osseointegration. Carbon fibers acting as polymer coated electrically conducting micro-biocircuits appear to provide a biocompatible semi-antioxidant property to remove damaging electron free radicals from the surrounding implant surface. Further, carbon fibers by removing excess electrons produced from the cellular mitochondrial electron transport chain during periods of hypoxia perhaps stimulate bone cell recruitment by free-radical chemotactic influences. In addition, well-studied bioorganic cell actin carbon fiber growth would appear to interface in close contact with the carbon-fiber-reinforced composite implant. Resulting subsequent actin carbon fiber/implant carbon fiber contacts then could help in discharging the electron biological overloads through electrochemical gradients to lower negative charges and lower concentration.

  13. Long-Acting Reversible Contraception (LARC): IUD and Implant

    Science.gov (United States)

    ... of use of the IUD? • What is the birth control implant? • How does the birth control implant work? • What are the benefits of the birth control implant? • How is the birth control implant inserted? • ...

  14. Sound localization ability of young children with bilateral cochlear implants.

    NARCIS (Netherlands)

    Beijen, J.W.; Snik, A.F.M.; Mylanus, E.A.M.

    2007-01-01

    OBJECTIVE: To evaluate the benefit of bilateral cochlear implantation in young children. STUDY DESIGN: Clinical trial comparing a group of bilaterally implanted children with a group of unilaterally implanted children. SETTING: Tertiary referral center. PATIENTS: Five bilaterally implanted children

  15. Recent topics on modeling of semiconductor processes, devices, and circuits

    CERN Document Server

    Topaloglu, Rasit Onur

    2011-01-01

    The last couple of years have been very busy for the semiconductor industry and researchers. The rapid speed of production channel length reduction has brought lithographic challenges to semiconductor modeling. These include stress optimization, transistor reliability and efficient circuit design with respect to interconnects, power and leakage at the chip level. This e-book focuses on the latest semiconductor techniques devised to address these issues. It should be a useful resource for electronic engineers and semiconductor chip designers.

  16. Radioactive implants for medical applications; Radioaktive Implantate fuer medizinische Anwendungen

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, M.

    2008-07-01

    The long-term success of surgery is often diminished by excessive wound healing, which makes another intervention necessary. Locally applied radionuclides with short range radiation can prevent such benign hyperproliferation. As pure electron emitter with a half-life of 14.3 days and a mean energy of 694.9 keV (E{sub max}=1710.48 keV) {sup 32}P is a suitable radionuclide which can be produced from the stable {sup 31}P by the capture of thermal neutrons (1 x 10{sup 14} /s/cm{sup 2}) in a nuclear reactor. After a typical irradiation time (14 days) the ratio of {sup 32}P to {sup 31}P is 1.4 x 10{sup -5} to 1. Implants made of polymer and/or bioabsorbable material functioning as a carrier of the radioactive emitter allow - as opposed to metallic implants - for new applications for this type of radiotherapy. In this thesis a manufacturing method for previously not available organic, radioactive implants has been developed and a corresponding dosimetry system has been established. By means of ion implantation, {sup 32}P ions with up to 180 keV can be shot some 100 nm deep into organic implant materials. For a typical dose (15 Gy over 7 days, 1 mm distance from the implant) an activity of 75 kBq is needed corresponding to 1.3 x 10{sup 11} {sup 32}P ions. The sputter ion gun, which has been optimized for this application, creates an ion beam with high beam current (> 14 {mu}A P{sup -}) and low emittance (< 4 {pi} mm mrad {radical}(MeV)). Because of the good beam quality also small implants (<1 mm{sup 2}) can be manufactured with high efficiency. The unintentionally co-implanted portion of molecules and nuclides of the same mass (e.g. {sup 31}PH, {sup 16}O{sub 2} and {sup 32}S) could be reduced from approximately 500 to 50 by an improvement of the isotope selection at {sup 32}P beam creation. Hence, in comparison with the best hitherto existing implantation methods, the radiation dose of the implant could be reduced by an order of magnitude. With regard to the beta

  17. Who Needs an Implantable Cardioverter Defibrillator?

    Science.gov (United States)

    ... this page from the NHLBI on Twitter. Who Needs an Implantable Cardioverter Defibrillator? Implantable cardioverter defibrillators (ICDs) ... before. Some people who have heart failure may need a CRT-D device. This device combines a ...

  18. Neutrophil Responses to Sterile Implant Materials.

    Directory of Open Access Journals (Sweden)

    Siddharth Jhunjhunwala

    Full Text Available In vivo implantation of sterile materials and devices results in a foreign body immune response leading to fibrosis of implanted material. Neutrophils, one of the first immune cells to be recruited to implantation sites, have been suggested to contribute to the establishment of the inflammatory microenvironment that initiates the fibrotic response. However, the precise numbers and roles of neutrophils in response to implanted devices remains unclear. Using a mouse model of peritoneal microcapsule implantation, we show 30-500 fold increased neutrophil presence in the peritoneal exudates in response to implants. We demonstrate that these neutrophils secrete increased amounts of a variety of inflammatory cytokines and chemokines. Further, we observe that they participate in the foreign body response through the formation of neutrophil extracellular traps (NETs on implant surfaces. Our results provide new insight into neutrophil function during a foreign body response to peritoneal implants which has implications for the development of biologically compatible medical devices.

  19. High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

    CERN Document Server

    Chi, P H; McKinley, J M; Stevie, F A; Granger, C N

    2002-01-01

    The metrology section of the 1999 International Technology Roadmap for Semiconductors specifies in-line dopant profile concentration precision requirements ranging from a value of 5% in 1999 to a value of 2% in 2008. These values are to be accomplished with ''low systematic error.'' Secondary ion mass spectrometry (SIMS) has demonstrated the capability to meet these requirements for B, As, and P. However, the detailed analytical protocols required to achieve these goals have not been completely specified. This article reports the parameters that must be controlled to make highly repeatable dose measurements of As and P implants in Si with magnetic sector SIMS instruments. Instrument conditions that were investigated include analytical species, matrix ion species, energy bandpass, and sample holder design. With optimized settings, we demonstrate the ability to distinguish As or P implant doses differing by 5%.

  20. An All Solid-State Pulsed Power Generator for Plasma Immersion Ion Implantation (PⅢ)

    Institute of Scientific and Technical Information of China (English)

    LIU Kefu; QIU Jian; WU Yifan

    2009-01-01

    An all solid-state pulsed power generator for plasma immersion ion implantation (PⅢ) is described. The pulsed power system is based on a Marx circuit configuration and semi-conductor switches, which have many advantages in adjustable repetition frequency, pulse width modulation and long serving life compared with the conventional circuit category, tube-based technologies such as gridded vacuum tubes, thyratrons, pulse forming networks and transformers.The operation of PⅢ with pulse repetition frequencies up to 500 Hz has been achieved at a pulse voltage amplitude from 2 kV to 60 kV, with an adjustable pulse duration from 1 μs to 100 μs.The proposed system and its performance, as used to drive a plasma ion implantation chamber,axe described in detail on the basis of the experimental results.

  1. Enhanced electrical activation in In-implanted Ge by C co-doping

    Energy Technology Data Exchange (ETDEWEB)

    Feng, R., E-mail: ruixing.feng@anu.edu.au; Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C. [Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200 (Australia); Sprouster, D. J. [Nuclear Science and Technology Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Decoster, S.; Pereira, L. M. C. [KU Leuven, Instituut voor Kern-en Stralingsfysica, 3001 Leuven (Belgium); Glover, C. J. [Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Russo, S. P. [Applied Physics, School Applied Sciences, RMIT University, Melbourne 3001 (Australia)

    2015-11-23

    At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrically-active dopant fraction in In-implanted Ge by co-doping with the isovalent element C. Electrical measurements have been correlated with x-ray absorption spectroscopy and transmission electron microscopy results in addition to density functional theory simulations. With C + In co-doping, the electrically active fraction was doubled and tripled at In concentrations of 0.2 and 0.7 at. %, respectively. This marked improvement was the result of C-In pair formation such that In-induced strain in the Ge lattice was reduced while the precipitation of In and the formation of In-V clusters were both suppressed.

  2. Effects of spatial confinement on conduction electrons in semiconductor nanostructures

    NARCIS (Netherlands)

    Germeau, Alexander

    2003-01-01

    Semiconductor nanostructures show electrical and optical properties which can be very different from bulk semiconductors. The various effects that occur due to the spatial confinement of electrons in such structures are of scientific importance. In addition, semiconductor nanostructures are very pro

  3. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, van Maurice; Lebouille, Tom; Visser, Guido; Vliet, van Frank E.

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are c

  4. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, M. van; Lebouille, T.T.N.; Visser, G.C.; Vliet, F.E. van

    2009-01-01

    In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in p

  5. The Dynamics of Semiconductor Optical Amplifiers – Modeling and Applications

    DEFF Research Database (Denmark)

    Mørk, Jesper; Nielsen, Mads Lønstrup; Berg, Tommy Winther

    2003-01-01

    The importance of semiconductor optical amplifiers is discussed. A semiconductor optical amplifier (SOA) is a semiconductor laser with anti-reflection coated facets that amplifies an injected light signal by means of stimulated emission. SOAs have a number of unique properties that open up...

  6. Semiconductor liquid crystal composition and methods for making the same

    Science.gov (United States)

    Alivisatos, A. Paul; Li, Liang-shi

    2005-04-26

    Semiconductor liquid crystal compositions and methods for making such compositions are disclosed. One embodiment of the invention is directed to a liquid crystal composition including a solvent and semiconductor particles in the solvent. The solvent and the semiconductor particles are in an effective amount in the liquid crystal composition to form a liquid crystal phase.

  7. 46 CFR 120.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where...

  8. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If...

  9. 46 CFR 183.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that...

  10. Impact of cone-beam computed tomography on implant planning and on prediction of implant size

    Energy Technology Data Exchange (ETDEWEB)

    Pedroso, Ludmila Assuncao de Mello; Silva, Maria Alves Garcia Santos, E-mail: ludmilapedroso@hotmail.com [Universidade Federal de Goias (UFG), Goiania, GO (Brazil). Fac. de Odontologia; Garcia, Robson Rodrigues [Universidade Federal de Goias (UFG), Goiania, GO (Brazil). Fac. de Odontologia. Dept. de Medicina Oral; Leles, Jose Luiz Rodrigues [Universidade Paulista (UNIP), Goiania, GO (Brazil). Fac. de Odontologia. Dept. de Cirurgia; Leles, Claudio Rodrigues [Universidade Federal de Goias (UFG), Goiania, GO (Brazil). Fac. de Odontologia. Dept. de Prevencao e Reabilitacao Oral

    2013-11-15

    The aim was to investigate the impact of cone-beam computed tomography (CBCT) on implant planning and on prediction of final implant size. Consecutive patients referred for implant treatment were submitted to clinical examination, panoramic (PAN) radiography and a CBCT exam. Initial planning of implant length and width was assessed based on clinical and PAN exams, and final planning, on CBCT exam to complement diagnosis. The actual dimensions of the implants placed during surgery were compared with those obtained during initial and final planning, using the McNemmar test (p < 0.05). The final sample comprised 95 implants in 27 patients, distributed over the maxilla and mandible. Agreement in implant length was 50.5% between initial and final planning, and correct prediction of the actual implant length was 40.0% and 69.5%, using PAN and CBCT exams, respectively. Agreement in implant width assessment ranged from 69.5% to 73.7%. A paired comparison of the frequency of changes between initial or final planning and implant placement (McNemmar test) showed greater frequency of changes in initial planning for implant length (p < 0.001), but not for implant width (p = 0.850). The frequency of changes was not influenced by implant location at any stage of implant planning (chi-square test, p > 0.05). It was concluded that CBCT improves the ability of predicting the actual implant length and reduces inaccuracy in surgical dental implant planning. (author)

  11. Effect of Implantation Machine Parameters on N+ ion Implantation for Upland Cotton (Gossypium hirsutum L.) Pollen

    Institute of Scientific and Technical Information of China (English)

    YUE Jieyu; YU Lixiang; WU Yuejin; TANG Canming

    2008-01-01

    Effect of parameters of ion implantation machine,including ion energy,total dose,dose rate,impulse energy and implantation interval on the pollen grains of upland cotton implanted with nitrogen ion beam were studied.The best parameters were screened out.The results also showed that the vacuum condition before the nitrogen ion implantation does not affect the pollen viability.

  12. Bone manipulation procedures in dental implants

    OpenAIRE

    Mittal, Yuvika; Jindal, Govind; Garg, Sandeep

    2016-01-01

    The use of dental implants for the rehabilitation of missing teeth has broadened the treatment options for patients and clinicians equally. As a result of advances in research in implant design, materials, and techniques, the use of dental implants has increased dramatically in the past two decades and is expected to expand further in the future. Success of dental implants depends largely on the quality and quantity of the available bone in the recipient site. This however may be compromised ...

  13. Environmental standards for intraocular lens implantation.

    Science.gov (United States)

    Crawford, B A; Kaufman, D V

    1984-02-01

    Successful implantation of prosthetic devices depends upon their freedom from postoperative inflammation and infection. Techniques and lessons learned in orthopaedic and other implant surgery should be applied to intraocular lens implantation. The avoidance of contamination by particles and micro-organisms is one essential principle of the surgical procedure. Practical steps are described to reduce both types of contamination. These measures taken together are recommended for adoption as a standard of environmental safety for lens implantation.

  14. Detailed spectral analysis of decellularized skin implants

    Science.gov (United States)

    Timchenko, E. V.; Timchenko, P. E.; Volova, L. T.; Dolgushkin, D. A.; Shalkovsky, P. Y.; Pershutkina, S. V.

    2016-08-01

    The resutls of detailed analysis of donor skin implants using Raman spectroscopy method are presented. Fourier-deconvolution method was used to separate overlapping spectrum lines and to improve its informativeness. Based on the processed spectra were introduced coefficients that represent changes in relative concentration of implant components, which determines the quality of implants. It was established that Raman spectroscopy method can be used in assessment of skin implants.

  15. Neutrophil Responses to Sterile Implant Materials

    OpenAIRE

    Siddharth Jhunjhunwala; Stephanie Aresta-DaSilva; Katherine Tang; David Alvarez; Webber, Matthew J.; Tang, Benjamin C.; Lavin, Danya M.; Omid Veiseh; Doloff, Joshua C; Suman Bose; Arturo Vegas; Minglin Ma; Gaurav Sahay; Alan Chiu; Andrew Bader

    2015-01-01

    In vivo implantation of sterile materials and devices results in a foreign body immune response leading to fibrosis of implanted material. Neutrophils, one of the first immune cells to be recruited to implantation sites, have been suggested to contribute to the establishment of the inflammatory microenvironment that initiates the fibrotic response. However, the precise numbers and roles of neutrophils in response to implanted devices remains unclear. Using a mouse model of peritoneal microcap...

  16. Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Ajay [Government College, Garoth, Dist. Mandsaur (M P) (India); Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Jat, K. L. [Swami Vivekanand Government P G College, Neemuch (M P) (India); Rishi, M. P. [Shahid Bhagat Singh Government P G College, Jaora, Dist Ratlam (M P) (India)

    2015-07-31

    Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases.

  17. Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

    Science.gov (United States)

    Alleyne, Fatima Sierre

    One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective

  18. Radiation-Hardness Data For Semiconductor Devices

    Science.gov (United States)

    Price, W. E.; Nichols, D. K.; Brown, S. F.; Gauthier, M. K.; Martin, K. E.

    1984-01-01

    Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

  19. Spin-Orbit induced semiconductor spin guides

    OpenAIRE

    Valin-Rodriguez, Manuel; Puente, Antonio; Serra, Llorens

    2002-01-01

    The tunability of the Rashba spin-orbit coupling allows to build semiconductor heterostructures with space modulated coupling intensities. We show that a wire-shaped spin-orbit modulation in a quantum well can support propagating electronic states inside the wire only for a certain spin orientation and, therefore, it acts as an effective spin transmission guide for this particular spin orientation.

  20. Measurements of radioactive contaminants in semiconductor materials

    Science.gov (United States)

    Gordon, Michael S.; Rodbell, Kenneth P.; Murray, Conal E.; McNally, Brendan D.

    2016-12-01

    The emission of alpha particles from materials used to manufacture semiconductors can contribute substantially to the single-event upset rate. The alpha particles originate from contamination in the materials, or from radioactive isotopes, themselves. In this review paper, we discuss the sources of the radioactivity and the measurement methods to detect the emitted particles.