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Sample records for agins polycrystalline films

  1. Ternary Ag-In-S polycrystalline films deposited using chemical bath deposition for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Chang, Wen-Sheng; Wu, Ching-Chen; Jeng, Ming-Shan; Cheng, Kong-Wei; Huang, Chao-Ming; Lee, Tai-Chou

    2010-01-01

    This paper describes the preparation and characterization of ternary Ag-In-S thin films deposited on indium tin oxide (ITO)-coated glass substrates using chemical bath deposition (CBD). The composition of the thin films was varied by changing the concentration ratio of [Ag]/[In] in the precursor solutions. The crystal structure, optical properties, and surface morphology of the thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), UV-vis spectroscopy, and field-emission scanning electron microscopy (FE-SEM). GIXRD results indicate that the samples consisted of AgInS 2 and/or AgIn 5 S 8 crystal phases, depending on the composition of the precursor solutions. The film thicknesses, electrical resistivity, flat band potentials, and band gaps of the samples were between 1.12 and 1.37 μm, 3.73 x 10 -3 and 4.98 x 10 4 Ω cm, -0.67 and -0.90 V vs. NHE, and 1.83 and 1.92 eV, respectively. The highest photocurrent density was observed in the sample with [Ag]/[In] = 4. A photocurrent density of 9.7 mA cm -2 was obtained with an applied potential of 0.25 V vs. SCE in the three-electrode system. The photoresponse experiments were conducted in 0.25 M K 2 SO 3 and 0.35 M Na 2 S aqueous electrolyte solutions under irradiation by a 300 W Xe light (100 mW cm -2 ). The results show that ternary Ag-In-S thin film electrodes have potential in water splitting applications.

  2. Ternary Ag-In-S polycrystalline films deposited using chemical bath deposition for photoelectrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Wen-Sheng [Energy and Environmental Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung-Hsing Road, Hsin-Chu 310, Taiwan (China); Wu, Ching-Chen [Department of Chemical Engineering, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan (China); Jeng, Ming-Shan [Energy and Environmental Laboratories, Industrial Technology Research Institute, 195 Sec. 4, Chung-Hsing Road, Hsin-Chu 310, Taiwan (China); Cheng, Kong-Wei [Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan (China); Huang, Chao-Ming [Department of Environmental Engineering, Kun Shan University, 949 Da Wan Road, Yung-Kang City, Tainan Hsien 710, Taiwan (China); Lee, Tai-Chou, E-mail: chmtcl@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, 168 University Road, Min-Hsiung, Chia-Yi 621, Taiwan (China)

    2010-04-15

    This paper describes the preparation and characterization of ternary Ag-In-S thin films deposited on indium tin oxide (ITO)-coated glass substrates using chemical bath deposition (CBD). The composition of the thin films was varied by changing the concentration ratio of [Ag]/[In] in the precursor solutions. The crystal structure, optical properties, and surface morphology of the thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), UV-vis spectroscopy, and field-emission scanning electron microscopy (FE-SEM). GIXRD results indicate that the samples consisted of AgInS{sub 2} and/or AgIn{sub 5}S{sub 8} crystal phases, depending on the composition of the precursor solutions. The film thicknesses, electrical resistivity, flat band potentials, and band gaps of the samples were between 1.12 and 1.37 {mu}m, 3.73 x 10{sup -3} and 4.98 x 10{sup 4} {Omega} cm, -0.67 and -0.90 V vs. NHE, and 1.83 and 1.92 eV, respectively. The highest photocurrent density was observed in the sample with [Ag]/[In] = 4. A photocurrent density of 9.7 mA cm{sup -2} was obtained with an applied potential of 0.25 V vs. SCE in the three-electrode system. The photoresponse experiments were conducted in 0.25 M K{sub 2}SO{sub 3} and 0.35 M Na{sub 2}S aqueous electrolyte solutions under irradiation by a 300 W Xe light (100 mW cm{sup -2}). The results show that ternary Ag-In-S thin film electrodes have potential in water splitting applications.

  3. Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

    Science.gov (United States)

    Vallejo, W.; Arredondo, C. A.; Gordillo, G.

    2010-11-01

    In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

  4. Optical and electrical characterization of AgInS2 thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Calixto-Rodriguez, M.; Martinez, H.; Calixto, M.E.; Pena, Y.; Martinez-Escobar, Dalia; Tiburcio-Silver, A.; Sanchez-Juarez, A.

    2010-01-01

    Silver indium sulfide (AgInS 2 ) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T s ) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS 2 thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS 2 , Ag 2 S, In 2 O 3 , and In 2 S 3 can be grown only by changing the Ag:In:S ratio in the starting solution and T s . So that, by carefully selecting the deposition parameters, single phase AgInS 2 thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T s = 400 o C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 Ω -1 cm -1 in the dark.

  5. OBTAINING AND PROPERTIES OF AgInS2 FILMS

    Directory of Open Access Journals (Sweden)

    M. A. Abdullaev

    2016-01-01

    Full Text Available Aim. The aim is to obtain AgInS2 films and study their electrical and optical properties.Methods. The samples of thin AgInS2 films for measurement were obtained by the method of magnetron sputtering with direct current. The structure, phase and elemental composition were studied using DRON-2 X-ray diffractometer (СuKа - radiation and the microscope LEO-1450 with EDS attachment for X-ray microanalysis. The optical transmittance and absorption were examined using MDR-2 monochromator in the wavelength range of 400-800 nm with the Keitley electrometer and FD-10G; we applied the spectral resolution of ± 1 meV. The electrical conductivity, Hall effect was measured by the four-point probe method with indium ohmic contacts. Measurements were carried out in the temperature range of 77-400 K.Findings. We obtained indium disulfide and silver films with the thickness of up to 1 μm on quartz substrates by magnetron sputtering. It is shown that increasing the substrate temperature to about 450 0С allows to obtain single phase film with a chalcopyrite structure with a band gap of 1.88 eV and high absorption coefficient (>104см-1.Conclusions. The possibility of obtaining films in a wide range of the electrical resistance and variation of the electrical parameters at constant stoichiometry is of interest for efficient technologies of phototransduction.

  6. Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

    International Nuclear Information System (INIS)

    Lugo, S.; Peña, Y.; Calixto-Rodriguez, M.; López-Mata, C.; Ramón, M.L.; Gómez, I.; Acosta, A.

    2012-01-01

    Highlights: ► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In 2 S 3 –Ag 2 S films. ► According to XRD chalcopyrite structure of AgInS 2 was obtained. ► AgInS 2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10 −3 (Ω cm) −1 . - Abstract: AgInS 2 thin films were obtained by the annealing of chemical bath deposited In 2 S 3 –Ag 2 S layers at 400 °C in N 2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS 2 has been obtained. These films have an optical band gap, E g , of 1.86 eV and an electrical conductivity value of 1.2 × 10 −3 (Ω cm) −1 .

  7. Investigation of AgInS2 thin films grown by coevaporation

    Science.gov (United States)

    Arredondo, C. A.; Clavijo, J.; Gordillo, G.

    2009-05-01

    AgInS2 thin films were grown on soda-lime glass substrates by co-evaporation of the precursors in a two-step process. X-ray diffraction (XRD) measurements indicated that these compounds grow in different phases and with different crystalline structure depending upon the deposition conditions. However, through a parameter study, conditions were found to grow thin films containing only the AgInS2 phase with chalcopyrite type structure. In samples containing a mixture of several phases, the contribution in percentage terms of each phase to the whole compound was estimated with the help of the PowderCell simulation package. It was also found that the AgInS2 films present p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and an energy band gap Eg of about 1.95 eV, indicating that this compound has good properties to perform as absorbent layer in thin film tandem solar cells. The effect of the deposition conditions on the optical and morphological properties was also investigated through spectral transmitance and atomic force microscopy (AFM) measurements.

  8. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  9. Anomalous Hall effect in polycrystalline Ni films

    KAUST Repository

    Guo, Zaibing

    2012-02-01

    We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.

  10. Photoinduced transformations of optical properties of CdSe and Ag-In-S nanocrystals embedded in the films of polyvinyl alcohol

    Directory of Open Access Journals (Sweden)

    Tetyana Kryshtab

    2016-06-01

    Full Text Available The results of investigation of photostability of the composites of CdSe and Ag-In-S nanocrystals (NCs embedded in the films of polyvinyl alcohol (PVA are presented. The films were studied by photoluminescence (PL, optical absorption, micro-Raman and X-ray diffraction methods. It is found that heating of the films to 100 °C promotes PVA crystallization and stimulates an increase of the PL intensity for the NCs of both types. The latter effect is ascribed mainly to the improvement of NC surface passivation by functional groups of PVA. The illumination with the 409-nm LED’s light enhances PL intensity for CdSe NCs and decreases it for Ag-In-S NCs as well as results in the darkening of the films. The color of the Ag-In-S-PVA film restores with time, while the change of the optical properties of the CdSe-PVA composite is irreversible. The possible mechanisms of the revealed effects, such as structural transformations at NC/PVA interface as well as the formation of new light-absorbing species are discussed.

  11. IMPEDANCE SPECTROSCOPY OF POLYCRYSTALLINE TIN DIOXIDE FILMS

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    D. V. Adamchuck

    2016-01-01

    Full Text Available The aim of this work is the analysis of the influence of annealing in an inert atmosphere on the electrical properties and structure of non-stoichiometric tin dioxide films by means of impedance spectroscopy method. Non-stoichiometric tin dioxide films were fabricated by two-step oxidation of metallic tin deposited on the polycrystalline Al2O3 substrates by DC magnetron sputtering. In order to modify the structure and stoichiometric composition, the films were subjected to the high temperature annealing in argon atmosphere in temperature range 300–800 °С. AC-conductivity measurements of the films in the frequency range 20 Hz – 2 MHz were carried out. Variation in the frequency dependencies of the real and imaginary parts of the impedance of tin dioxide films was found to occur as a result of high-temperature annealing. Equivalent circuits for describing the properties of films with various structure and stoichiometric composition were proposed. Possibility of conductivity variation of the polycrystalline tin dioxide films as a result of аnnealing in an inert atmosphere was demonstrated by utilizing impedance spectroscopy. Annealing induces the recrystallization of the films, changing in their stoichiometry as well as increase of the sizes of SnO2 crystallites. Variation of electrical conductivity and structure of tin dioxide films as a result of annealing in inert atmosphere was confirmed by X-ray diffraction analysis. Analysis of the impedance diagrams of tin dioxide films was found to be a powerful tool to study their electrical properties. 

  12. Magnetostrictive properties of polycrystalline iron cobalt films

    International Nuclear Information System (INIS)

    Cooke, M.D.

    2000-10-01

    This thesis is concerned with the magnetic properties of magnetostrictive FeCo polycrystalline alloy films produced by RF magnetron sputter deposition. The bulk material is known to have highly magnetostrictive properties, coupled with the possibility of a low anisotropy with the correct thermal treatment to allow ordering. Significant reduction in the anisotropy was found by using post depostional thermal treatment in Ar/H. It has been demonstrated that it is possible to produce FeCo films with magnetostrictive properties similar to those found in the bulk. Detailed examination showed an increased peak in the magnetostriction with composition which had not been previously viewed in the bulk materials. Initial development was also made of a novel co-depositional technique to allow magnetostrictive determination as a function of composition in a single deposition. Development was made of a technique using the Daresbury Synchrotron research facility and the XRD equipment to allow determination of the magnetostriction coefficients of polycrystalline films. This is the first time this has been achieved for thin film materials and provides exciting new possibilities for the future. A critique was made of the optical cantilever technique for determining magnetostriction. Clear consideration has to be made of rotational and frequency effects. A new analytical theory was devised which allowing determination of the cantilever deflection for similar substrate and film thickness. This is essential for development of current trends in nanotechnology. The results were then optimised for use in sensor and actuator devices providing novel results. Finally investigation was made of the possible effects of surfaces on the magnetic properties. The magnetostriction of FeCo/Ag multilayers and Ag embedded in an FeCo matrix are compared. These clearly show the influence of surface and illustrate the importance of considering the technique used to determine the magnetostriction. (author)

  13. Hydrogenation of polycrystalline silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Mates, Tomáš; Knížek, Karel; Ledinský, Martin; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.

    2006-01-01

    Roč. 501, - (2006), s. 144-148 ISSN 0040-6090 R&D Projects: GA MŠk ME 537; GA MŽP(CZ) SM/300/1/03; GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GA202/03/0789 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon * atmospheric pressure chemical vapour deposition * hydrogen passivation * photoluminescence * Raman spectroscopy * Si-H 2 bonding * hydrogen molecules Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.666, year: 2006

  14. Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Min-Cherl; Zhang, Dongrong; Nikiforov, Gueorgui O.; Lee, Michael V.; Qi, Yabing, E-mail: Yabing.Qi@oist.jp [Energy Materials and Surface Sciences Unit (EMSS), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Okinawa 904-0495 (Japan); Joo Shin, Tae; Ahn, Docheon; Lee, Han-Koo; Baik, Jaeyoon; Shin, Hyun-Joon [Pohang Accelerator Laboratory, POSTECH, Pohang 790-784 (Korea, Republic of)

    2015-03-15

    Ultrathin (<6 nm) polycrystalline films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-P) are deposited with a two-step spin-coating process. The influence of spin-coating conditions on morphology of the resulting film was examined by atomic force microscopy. Film thickness and RMS surface roughness were in the range of 4.0–6.1 and 0.6–1.1 nm, respectively, except for small holes. Polycrystalline structure was confirmed by grazing incidence x-ray diffraction measurements. Near-edge x-ray absorption fine structure measurements suggested that the plane through aromatic rings of TIPS-P molecules was perpendicular to the substrate surface.

  15. Superconducting parameters of polycrystalline niobium films

    International Nuclear Information System (INIS)

    Kandyba, P.E.; Kolesnikov, D.P.; Tkachev, V.A.

    1978-01-01

    The niobium semi-crystalline films, having a thickness of 200-5,050 A have been studied. The films have been produced by the electron-beam evaporation in the oilless vacuum and by the ionic plasma spraying with diode and triode methods. Determined have been the coherence length, the magnetic field penetration depth and the Ginsburg-andau parameter. An attempt is made to determine the electron states density of the Fermi surface

  16. Polycrystalline diamond film UV detectors for excimer lasers

    International Nuclear Information System (INIS)

    Ralchenko, V G; Savel'ev, A V; Konov, Vitalii I; Mazzeo, G; Spaziani, F; Conte, G; Polyakov, V I

    2006-01-01

    Photoresistive metal-semiconductor-metal detectors based on polycrystalline diamond films are fabricated for recording cw and pulsed UV radiation. The detectors have a high spectral selectivity (the UV-to-VIS response ratio is ∼10 5 ) and a temporal resolution of the order of 10 9 s. 'Solar-blind' photostable diamond detectors are promising for applications in UV lithography, laser micromachining, medicine, and space research. (letters)

  17. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  18. Progress and issues in polycrystalline thin-film PV technologies

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.; Ullal, H.S.; Roedern, B. von [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    Substantial progress has occurred in polycrystalline thin-film photovoltaic technologies in the past 18 months. However, the transition to first-time manufacturing is still under way, and technical problems continue. This paper focuses on the promise and the problems of the copper indium diselenide and cadmium telluride technologies, with an emphasis on continued R&D needs for the near-term transition to manufacturing and for next-generation improvements. In addition, it highlights the joint R&D efforts being performed in the U.S. Department of Energy/National Renewable Energy Laboratory Thin-Film Photovoltaic Partnership Program.

  19. Characterization of CdSe polycrystalline films by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Brasil, M.J.S.P.

    1985-01-01

    The characterization of CdSe polycristalline films were done by photoluminescence spectroscopy, X-ray diffraction analysis, diagrams IxV, and efficiency of solar energy conversion for cells done by these films. The experimental data shown strong temperature dependence of annealing, and the optimum temperature around 650 0 C was determined. The films did not present photoluminescence before heat treatment, but the annealed sample spectrum showed fine structures in the excitonic region, crystal phase transformation, enhancement of grain size, and better efficiency of the cell. Measurements of photoluminescence between 2 and 300 K, showed two bands of infrared emission, width and intense enough. The shape, at half-width, and the integrated intensity of one these bands were described by a configuration coordinate model for deep centers. Based on obtained results, some hypothesis about the origin of these bands and its correlation with efficiency of cells done with CdSe polycrystalline films, are proposed. (M.C.K.) [pt

  20. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

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    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  1. Resistive switching in polycrystalline YMnO3 thin films

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    A. Bogusz

    2014-10-01

    Full Text Available We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by pulsed laser deposition and sandwiched between Au top and Ti/Pt bottom electrodes. The ratio of the resistance in the OFF and ON state is larger than 103. The observed phenomena can be attributed to the formation and rupture of conductive filaments within the multiferroic YMnO3 film. The generation of conductive paths under applied electric field is discussed in terms of the presence of grain boundaries and charged domain walls inherently formed in hexagonal YMnO3. Our findings suggest that engineering of the ferroelectric domains might be a promising route for designing and fabrication of novel resistive switching devices.

  2. Polycrystalline Mn-alloyed indium tin oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  3. Characterisation of electrodeposited polycrystalline uranium dioxide thin films on nickel foil for industrial applications

    International Nuclear Information System (INIS)

    Adamska, A.M.; Bright, E. Lawrence; Sutcliffe, J.; Liu, W.; Payton, O.D.; Picco, L.; Scott, T.B.

    2015-01-01

    Polycrystalline uranium dioxide thin films were grown on nickel substrates via aqueous electrodeposition of a precursor uranyl salt. The arising semiconducting uranium dioxide thin films exhibited a tower-like morphology, which may be suitable for future application in 3D solar cell applications. The thickness of the homogenous, tower-like films reached 350 nm. Longer deposition times led to the formation of thicker (up to 1.5 μm) and highly porous films. - Highlights: • Electrodeposition of polycrystalline UO_2 thin films • Tower-like morphology for 3D solar cell applications • Novel technique for separation of heavy elements from radioactive waste streams

  4. Platinum-induced structural collapse in layered oxide polycrystalline films

    International Nuclear Information System (INIS)

    Wang, Jianlin; Liu, Changhui; Huang, Haoliang; Fu, Zhengping; Peng, Ranran; Zhai, Xiaofang; Lu, Yalin

    2015-01-01

    Effect of a platinum bottom electrode on the SrBi 5 Fe 1−x Co x Ti 4 O 18 layered oxide polycrystalline films was systematically studied. The doped cobalt ions react with the platinum to form a secondary phase of PtCoO 2 , which has a typical Delafossite structure with a weak antiferromagnetism and an exceptionally high in-plane electrical conductivity. Formation of PtCoO 2 at the interface partially consumes the cobalt dopant and leads to the structural collapsing from 5 to 4 layers, which was confirmed by X-ray diffraction and high resolution transmission electron microscopy measurements. Considering the weak magnetic contribution from PtCoO 2 , the observed ferromagnetism should be intrinsic of the Aurivillius compounds. Ferroelectric properties were also indicated by the piezoresponse force microscopy. In this work, the platinum induced secondary phase at the interface was observed, which has a strong impact on Aurivillius structural configuration and thus the ferromagnetic and ferroelectric properties

  5. Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

    KAUST Repository

    Duan, Xiaofei; Mi, Wenbo; Guo, Zaibing; Bai, Haili

    2013-01-01

    The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0

  6. Analytical approximate equations for the resistivity and its temperature coefficient in thin polycrystalline metallic films

    International Nuclear Information System (INIS)

    Tellier, C.R.; Tosser, A.J.

    1977-01-01

    In the usual thickness range of sputtered metallic films, analytical linearized approximate expressions of polycrystalline film resistivity and its t.c.r. are deduced from the Mayadas-Shatzkes theoretical equations. A good experimental fit is observed for Al rf sputtered metal films. (orig.) [de

  7. Tailoring of in-plane magnetic anisotropy in polycrystalline cobalt thin films by external stress

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Dileep, E-mail: dkumar@csr.res.in [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Singh, Sadhana [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Vishawakarma, Pramod [School of Nanotechnology, RGPV, Bhopal 462036 (India); Dev, Arun Singh; Reddy, V.R. [UGC-DAE Consortium for Scientic Research, Khandwa Road, Indore 452001 (India); Gupta, Ajay [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201303 (India)

    2016-11-15

    Polycrystalline Co films of nominal thickness ~180 Å were deposited on intentionally curved Si substrates. Tensile and compressive stresses of 100 MPa and 150 MPa were induced in the films by relieving the curvature. It has been found that, within the elastic limit, presence of stress leads to an in-plane magnetic anisotropy in the film and its strength increases with increasing stress. Easy axis of magnetization in the films is found to be parallel/ transverse to the compressive /tensile stresses respectively. The origin of magnetic anisotropy in the stressed films is understood in terms of magneto- elastic coupling, where the stress try to align the magnetic moments in order to minimize the magneto-elastic as well as anisotropy energy. Tensile stress is also found to be responsible for the surface smoothening of the films, which is attributed to the movement of the atoms associated with the applied stress. The present work provides a possible way to tailor the magnetic anisotropy and its direction in polycrystalline and amorphous films using external stress. - Highlights: • Tensile and compressive stresses were induced in Co films by removing the bending force from the substrates after film deposition. • Controlled external mechanical stress is found to be responsible for magnetic anisotropies in amorphous and polycrystalline thin films, where crystalline anisotropy is absent. • Tensile stress leads to surface smoothening of the polycrystalline Co films.

  8. CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

    International Nuclear Information System (INIS)

    Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

    2015-01-01

    Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

  9. A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

    KAUST Repository

    Duan, X. F.

    2013-01-08

    Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

  10. Hydrogen passivation of polycrystalline Si thin film solar cells

    International Nuclear Information System (INIS)

    Gorka, Benjamin

    2010-01-01

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

  11. Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate

    International Nuclear Information System (INIS)

    Kim, Yong-Hae; Chung, Choong-Heui; Yun, Sun Jin; Moon, Jaehyun; Park, Dong-Jin; Kim, Dae-Won; Lim, Jung Wook; Song, Yoon-Ho; Lee, Jin Ho

    2005-01-01

    A large-grain polycrystalline silicon film was obtained on a plastic substrate by sequential lateral solidification. With various combinations of sputtering powers and Ar working gas pressures, the conditions for producing dense amorphous silicon (a-Si) and SiO 2 films were optimized. The successful crystallization of the a-Si film is attributed to the production of a dense a-Si film that has low argon content and can endure high-intensity laser irradiation

  12. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

    International Nuclear Information System (INIS)

    Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

    2008-01-01

    The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

  13. A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

    KAUST Repository

    Duan, X. F.; Mi, Wenbo; Guo, Zaibing; Bai, Haili

    2013-01-01

    Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation

  14. Influence of lattice distortion on phase transition properties of polycrystalline VO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tiegui [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Langping, E-mail: aplpwang@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Wang, Xiaofeng; Zhang, Yufen [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Yu, Yonghao, E-mail: yhyu@hit.edu.cn [Academy of Fundamental and Interdisciplinary Science, Harbin Institute of Technology, Harbin 150001 (China)

    2016-08-30

    Highlights: • Polycrystalline VO{sub 2} thin films were fabricated by high power impulse magnetron sputtering. • The reported lowest phase transition temperature for undoped polycrystalline VO{sub 2} thin film was reduced to 32 °C by this research. • XRD patterns at varied temperatures revealed that the main structual change was a gradual shift in interplanar spacing with temperature. - Abstract: In this work, high power impulse magnetron sputtering was used to control the lattice distortion in polycrystalline VO{sub 2} thin film. SEM images revealed that all the VO{sub 2} thin films had crystallite sizes of below 20 nm, and similar configurations. UV–vis-near IR transmittance spectra measured at different temperatures showed that most of the as-deposited films had a typical metal–insulator transition. Four-point probe resistivity results showed that the transition temperature of the films varied from 54.5 to 32 °C. The X-ray diffraction (XRD) patterns of the as-deposited films revealed that most were polycrystalline monoclinic VO{sub 2}. The XRD results also confirmed that the lattice distortions in the as-deposited films were different, and the transition temperature decreased with the difference between the interplanar spacing of the as-deposited thin film and standard rutile VO{sub 2}. Furthermore, a room temperature rutile VO{sub 2} thin film was successfully synthesized when this difference was small enough. Additionally, XRD patterns measured at varied temperatures revealed that the phase transition process of the polycrystalline VO{sub 2} thin film was a coordinative deformation between grains with different orientations. The main structural change during the phase transition was a gradual shift in interplanar spacing with temperature.

  15. Hydrogen passivation of polycrystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, Benjamin

    2010-12-15

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

  16. A new computer-aided simulation model for polycrystalline silicon film resistors

    Science.gov (United States)

    Ching-Yuan Wu; Weng-Dah Ken

    1983-07-01

    A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

  17. Effect of hydrogen passivation on polycrystalline silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Mates, Tomáš; Ledinský, Martin; Oswald, Jiří; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.

    2005-01-01

    Roč. 487, - (2005), s. 152-156 ISSN 0040-6090 R&D Projects: GA AV ČR(CZ) IAA1010316; GA AV ČR(CZ) IAA1010413; GA ČR(CZ) GD202/05/H003 Institutional research plan: CEZ:AV0Z10100521 Keywords : hydrogen passivation * polycrystalline silicon * photoluminescence * Raman spectroscopy * Si-H 2 * hydrogen molecules Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.569, year: 2005

  18. Nanofrictional behavior of amorphous, polycrystalline and textured Y-Cr-O films

    International Nuclear Information System (INIS)

    Gervacio-Arciniega, J.J.; Flores-Ruiz, F.J.; Diliegros-Godines, C.J.; Broitman, E.; Enriquez-Flores, C.I.; Espinoza-Beltrán, F.J.; Siqueiros, J.; Cruz, M.P.

    2016-01-01

    Highlights: • Friction coefficient (μ) of ferroelectric textured and polycrystalline YCrO_3 films. • A simple method to evaluate μ from a single AFM image is presented. • The AFM-cantilever spring constant was determined from its dynamic response. • Polycrystalline and amorphous films have a lower μ than textured samples. - Abstract: Differences in friction coefficients (μ) of ferroelectric YCrO_3, textured and polycrystalline films, and non-ferroelectric Y-Cr-O films are analyzed. The friction coefficient was evaluated by atomic force microscopy using a simple quantitative procedure where the dependence of friction force with the applied load is obtained in only one topographical image. A simple code was developed with the MATLAB"® software to analyze the experimental data. The code includes a correction of the hysteresis in the forward and backward scanning directions. The quantification of load exerted on the sample surface was obtained by finite element analysis of the AFM cantilever starting from its experimental dynamic information. The results show that the ferroelectric YCrO_3 film deposited on a Pt(150 nm)/TiO_2(30 nm)/SiO_2/Si (100) substrate is polycrystalline and has a lower friction coefficient than the deposited on SrTiO_3 (110), which is highly textured. From a viewpoint of industrial application in ferroelectric memories, where the writing process is electrical or mechanically achieved by sliding AFM tips on the sample, polycrystalline YCrO_3 films seem to be the best candidates due to their lower μ.

  19. Nanofrictional behavior of amorphous, polycrystalline and textured Y-Cr-O films

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio-Arciniega, J.J. [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico); Flores-Ruiz, F.J., E-mail: fcojfloresr@gmail.com [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico); Diliegros-Godines, C.J. [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico); Broitman, E. [Thin Film Physics Division, IFM, Linköping University, SE-58183 Linköping (Sweden); Enriquez-Flores, C.I.; Espinoza-Beltrán, F.J. [CINVESTAV Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, 76230 Querétaro, Qro. (Mexico); Siqueiros, J.; Cruz, M.P. [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico)

    2016-08-15

    Highlights: • Friction coefficient (μ) of ferroelectric textured and polycrystalline YCrO{sub 3} films. • A simple method to evaluate μ from a single AFM image is presented. • The AFM-cantilever spring constant was determined from its dynamic response. • Polycrystalline and amorphous films have a lower μ than textured samples. - Abstract: Differences in friction coefficients (μ) of ferroelectric YCrO{sub 3}, textured and polycrystalline films, and non-ferroelectric Y-Cr-O films are analyzed. The friction coefficient was evaluated by atomic force microscopy using a simple quantitative procedure where the dependence of friction force with the applied load is obtained in only one topographical image. A simple code was developed with the MATLAB{sup ®} software to analyze the experimental data. The code includes a correction of the hysteresis in the forward and backward scanning directions. The quantification of load exerted on the sample surface was obtained by finite element analysis of the AFM cantilever starting from its experimental dynamic information. The results show that the ferroelectric YCrO{sub 3} film deposited on a Pt(150 nm)/TiO{sub 2}(30 nm)/SiO{sub 2}/Si (100) substrate is polycrystalline and has a lower friction coefficient than the deposited on SrTiO{sub 3} (110), which is highly textured. From a viewpoint of industrial application in ferroelectric memories, where the writing process is electrical or mechanically achieved by sliding AFM tips on the sample, polycrystalline YCrO{sub 3} films seem to be the best candidates due to their lower μ.

  20. Carrier transport in polycrystalline silicon thin films solar cells grown on a highly textured structure

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Takakura, H.; Hamakawa, Y.; Muhida, R.; Kawamura, T.; Harano, T.; Toyama, T.; Okamoto, H.

    2004-01-01

    Roč. 43, 9A (2004), s. 5955-5959 ISSN 0021-4922 Institutional research plan: CEZ:AV0Z1010914 Keywords : polycrystalline silicon thin film * solar cells * substrate texture Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.142, year: 2004

  1. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  2. Control of surface ripple amplitude in ion beam sputtered polycrystalline cobalt films

    Energy Technology Data Exchange (ETDEWEB)

    Colino, Jose M., E-mail: josemiguel.colino@uclm.es [Institute of Nanoscience, Nanotechnology and Molecular Materials, University of Castilla-La Mancha, Campus de la Fabrica de Armas, Toledo 45071 (Spain); Arranz, Miguel A. [Facultad de Ciencias Quimicas, University of Castilla-La Mancha, Ciudad Real 13071 (Spain)

    2011-02-15

    We have grown both polycrystalline and partially textured cobalt films by magnetron sputter deposition in the range of thickness (50-200 nm). Kinetic roughening of the growing film leads to a controlled rms surface roughness values (1-6 nm) increasing with the as-grown film thickness. Ion erosion of a low energy 1 keV Ar+ beam at glancing incidence (80{sup o}) on the cobalt film changes the surface morphology to a ripple pattern of nanometric wavelength. The wavelength evolution at relatively low fluency is strongly dependent on the initial surface topography (a wavelength selection mechanism hereby confirmed in polycrystalline rough surfaces and based on the shadowing instability). At sufficiently large fluency, the ripple wavelength steadily increases on a coarsening regime and does not recall the virgin surface morphology. Remarkably, the use of a rough virgin surface makes the ripple amplitude in the final pattern can be controllably increased without affecting the ripple wavelength.

  3. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    DEFF Research Database (Denmark)

    Canulescu, Stela; Borca, C. N.; Rechendorff, Kristian

    2016-01-01

    The structural, optical, and transport properties of sputter-deposited Al-Ti thin films have been investigated as a function of Ti alloying with a concentration ranging from 2% to 46%. The optical reflectivity of Al-Ti films at visible and near-infrared wavelengths decreases with increasing Ti...... content. Xray absorption fine structure measurements reveal that the atomic ordering around Ti atoms increases with increasing Ti content up to 20% and then decreases as a result of a transition from a polycrystalline to amorphous structure. The transport properties of the Al-Ti films are influenced...... by electron scattering at the grain boundaries in the case of polycrystalline films and static defects, such as antisite effects and vacancies in the case of the amorphous alloys. The combination of Ti having a real refractive index (n) comparable with the extinction coefficient (k) and Al with n much smaller...

  4. Quantum Dot Sensitized Solar Cells Based on TiO2/AgInS2

    Science.gov (United States)

    Pawar, Sachin A.; Jeong, Jae Pil; Patil, Dipali S.; More, Vivek M.; Lee, Rochelle S.; Shin, Jae Cheol; Choi, Won Jun

    2018-05-01

    Quantum dot heterojunctions with type-II band alignment can efficiently separate photogenerated electron-hole pairs and, hence, are useful for solar cell studies. In this study, a quantum dot sensitized solar cell (QDSSC) made of TiO2/AgInS2 is achieved to boost the photoconversion efficiency for the TiO2-based system by varying the AgInS2 layer's thickness. The TiO2 nanorods array film is prepared by using a simple hydrothermal technique. The formation of a AgInS2 QD-sensitized TiO2-nanorod photoelectrode is carried out by successive ionic layer adsorption and reaction (SILAR) technique. The effect of the QD layer on the performance of the solar cell is studied by varying the SILAR cycles of the QD coating. The synthesized electrode materials are characterized by using X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy and solar cell performances. The results indicate that the nanocrystals have effectively covered the outer surfaces of the TiO2 nanorods. The interfacial structure of quantum dots (QDs)/TiO2 is also investigated, and the growth interface is verified. A careful comparison between TiO2/AgInS2 sensitized cells reveals that the trasfer of electrons and hole proceeds efficiently, the recombination is suppressed for the optimum thickness of the QD layer and light from the entire visible spectrum is utilised. Under AM 1.5G illumination, a high photocurrent of 1.36 mAcm-2 with an improved power conversion efficiency of 0.48% is obtained. The solar cell properties of our photoanodes suggest that the TiO2 nanorod array films co-sensitized by AgInS2 nanoclusters have potential applications in solar cells.

  5. Direct imaging of dopant distribution in polycrystalline ZnO films

    Czech Academy of Sciences Publication Activity Database

    Lorenzo, F.; Aebersold, A.B.; Morales-Masis, M.; Ledinský, Martin; Escrig, S.; Vetushka, Aliaksi; Alexander, D.T.L.; Hessler-Wyser, A.; Fejfar, Antonín; Hébert, C.; Nicolay, S.; Ballif, C.

    2017-01-01

    Roč. 9, č. 8 (2017), s. 7241-7248 ISSN 1944-8244 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : dopant distribution * film polarity * grain boundaries * NanoSIMS * polycrystalline film * zinc oxide Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 7.504, year: 2016

  6. Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

    International Nuclear Information System (INIS)

    Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

    2005-01-01

    Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

  7. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  8. Two-dimensional discrete dislocation models of deformation in polycrystalline thin metal films on substrates

    International Nuclear Information System (INIS)

    Hartmaier, Alexander; Buehler, Markus J.; Gao, Huajian

    2005-01-01

    The time-dependent irreversible deformation of polycrystalline thin metal films on substrates is investigated using two-dimensional discrete dislocation dynamics models incorporating essential parameters determined from atomistic studies. The work is focused on the mechanical properties of uncapped films, where diffusive processes play an important role. The simulations incorporate dislocation climb along the grain boundary as well as conservative glide. Despite of severe limitations of the two-dimensional dislocation models, the simulation results are found to largely corroborate experimental findings on different dominant deformation mechanisms at different film thicknesses

  9. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    International Nuclear Information System (INIS)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2017-01-01

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi_3Fe_5O_1_2, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches −5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods. - Highlights: • Thin film of polycrystalline Bi_3Fe_5O_1_2 was prepared by the mist CVD method. • Optimized conditions were found for the synthesis of single phase of Bi_3Fe_5O_1_2. • The Faraday rotation angle at 633 nm is –5.2 deg/μm at room temperature. • The Faraday rotation is interpreted by the electronic transitions of Fe"3"+ ions.

  10. Faraday effect of polycrystalline bismuth iron garnet thin film prepared by mist chemical vapor deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Situ; Kamakura, Ryosuke; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa, E-mail: tanaka@dipole7.kuic.kyoto-u.ac.jp

    2017-01-15

    We have synthesized polycrystalline thin film composed of a single phase of metastable bismuth iron garnet, Bi{sub 3}Fe{sub 5}O{sub 12}, on a fused silica substrate, one of the most widely utilized substrates in the solid-state electronics, by using mist chemical vapor deposition (mist CVD) method. The phase purity and stoichiometry are confirmed by X-ray diffraction and Rutherford backscattering spectrometry. The resultant thin film shows a small surface roughness of 3.251 nm. The saturation magnetization at room temperature is 1200 G, and the Faraday rotation angle at 633 nm reaches −5.2 deg/μm. Both the magnetization and the Faraday rotation angles are somewhat higher than those of polycrystalline BIG thin films prepared by other methods. - Highlights: • Thin film of polycrystalline Bi{sub 3}Fe{sub 5}O{sub 12} was prepared by the mist CVD method. • Optimized conditions were found for the synthesis of single phase of Bi{sub 3}Fe{sub 5}O{sub 12}. • The Faraday rotation angle at 633 nm is –5.2 deg/μm at room temperature. • The Faraday rotation is interpreted by the electronic transitions of Fe{sup 3+} ions.

  11. Centimetre-scale micropore alignment in oriented polycrystalline metal-organic framework films via heteroepitaxial growth.

    Science.gov (United States)

    Falcaro, Paolo; Okada, Kenji; Hara, Takaaki; Ikigaki, Ken; Tokudome, Yasuaki; Thornton, Aaron W; Hill, Anita J; Williams, Timothy; Doonan, Christian; Takahashi, Masahide

    2017-03-01

    The fabrication of oriented, crystalline films of metal-organic frameworks (MOFs) is a critical step toward their application to advanced technologies such as optics, microelectronics, microfluidics and sensing. However, the direct synthesis of MOF films with controlled crystalline orientation remains a significant challenge. Here we report a one-step approach, carried out under mild conditions, that exploits heteroepitaxial growth for the rapid fabrication of oriented polycrystalline MOF films on the centimetre scale. Our methodology employs crystalline copper hydroxide as a substrate and yields MOF films with oriented pore channels on scales that primarily depend on the dimensions of the substrate. To demonstrate that an anisotropic crystalline morphology can translate to a functional property, we assembled a centimetre-scale MOF film in the presence of a dye and showed that the optical response could be switched 'ON' or 'OFF' by simply rotating the film.

  12. Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Magnfält, D., E-mail: danma@ifm.liu.se; Sarakinos, K. [Nanoscale Engineering Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Fillon, A.; Abadias, G. [Institut P' , Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, SP2MI, Téléport 2, Bd M. et P. Curie, F-86962 Chasseneuil-Futuroscope (France); Boyd, R. D.; Helmersson, U. [Plasma and Coatings Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2016-02-07

    Intrinsic stresses in vapor deposited thin films have been a topic of considerable scientific and technological interest owing to their importance for functionality and performance of thin film devices. The origin of compressive stresses typically observed during deposition of polycrystalline metal films at conditions that result in high atomic mobility has been under debate in the literature in the course of the past decades. In this study, we contribute towards resolving this debate by investigating the grain size dependence of compressive stress magnitude in dense polycrystalline Mo films grown by magnetron sputtering. Although Mo is a refractory metal and hence exhibits an intrinsically low mobility, low energy ion bombardment is used during growth to enhance atomic mobility and densify the grain boundaries. Concurrently, the lateral grain size is controlled by using appropriate seed layers on which Mo films are grown epitaxially. The combination of in situ stress monitoring with ex situ microstructural characterization reveals a strong, seemingly linear, increase of the compressive stress magnitude on the inverse grain size and thus provides evidence that compressive stress is generated in the grain boundaries of the film. These results are consistent with models suggesting that compressive stresses in metallic films deposited at high homologous temperatures are generated by atom incorporation into and densification of grain boundaries. However, the underlying mechanisms for grain boundary densification might be different from those in the present study where atomic mobility is intrinsically low.

  13. Polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Gall, S.; Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Lee, K.Y.; Rau, B.; Ruske, F.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH (formerly Hahn-Meitner-Institut Berlin GmbH), Department Silicon Photovoltaics (SE1), Kekulestr. 5, D-12489 Berlin (Germany)

    2009-06-15

    Poly-Si thin-film solar cells on glass feature the potential to reach single-junction efficiencies of 15% or even higher at low costs. In this paper innovative approaches are discussed, which could lead to substantial efficiency improvements and significant cost reductions: (i) preparation of large-grained poly-Si films using the 'seed layer concept' targeting at high material quality, (ii) utilization of ZnO:Al-coated glass enabling simple contacting and light-trapping schemes, (iii) utilization of high-rate electron-beam evaporation for the absorber deposition offering a high potential for cost reduction. (author)

  14. Passivation of defects in polycrystalline Cu2O thin films by hydrogen or cyanide treatment

    International Nuclear Information System (INIS)

    Ishizuka, S.; Kato, S.; Okamoto, Y.; Sakurai, T.; Akimoto, K.; Fujiwara, N.; Kobayashi, H.

    2003-01-01

    The effects of the passivation of defects in polycrystalline nitrogen-doped cuprous oxide (Cu 2 O) thin films with hydrogen or cyanide treatment were studied. In the photoluminescence (PL) measurements, although the emission was not observed before treatment, luminescence of Cu 2 O at around 680 nm was observed after each treatment. This improvement in the luminescence property may be due to the passivation of non-radiative recombination centers by H or CN. The hole carrier concentration increased from the order of 10 16 to 10 17 cm -3 with hydrogen or cyanide treatment. From these results, both the hydrogen and cyanide treatments were found to be very effective to passivate defects and improve the optical and electrical properties of polycrystalline Cu 2 O thin films. The thermal stability of the passivation effects by the cyanide treatment is, however, superior to that by the hydrogen treatment

  15. Low resistance polycrystalline diamond thin films deposited by hot ...

    Indian Academy of Sciences (India)

    Administrator

    silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemi- cal vapour ... the laser spot was focused on the sample surface using a ... tative spectra of diamond thin films with a typical dia-.

  16. Thermally stimulated currents in α-HgI2 polycrystalline films

    International Nuclear Information System (INIS)

    Shiu, Y.-T.; Huang, T.-J.; Shih, C.-T.; Su, C.-F.; Lan, S.-M.; Chiu, K.-C.

    2007-01-01

    A study of thermally stimulated currents (TSC) is applied to α-HgI 2 polycrystalline films grown by physical vapour deposition with various thermal boundary conditions. Five TSC peaks are clearly observed and numerically fitted. The activation energy and the density of the trapping centre that corresponds to each TSC peak are then calculated. Finally, the effects of the deposition conditions on the TSC results are discussed

  17. Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

    KAUST Repository

    Duan, Xiaofei

    2013-09-01

    The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

  18. Intrinsic Compressive Stress in Polycrystalline Films is Localized at Edges of the Grain Boundaries

    Science.gov (United States)

    Vasco, Enrique; Polop, Celia

    2017-12-01

    The intrinsic compression that arises in polycrystalline thin films under high atomic mobility conditions has been attributed to the insertion or trapping of adatoms inside grain boundaries. This compression is a consequence of the stress field resulting from imperfections in the solid and causes the thermomechanical fatigue that is estimated to be responsible for 90% of mechanical failures in current devices. We directly measure the local distribution of residual intrinsic stress in polycrystalline thin films on nanometer scales, using a pioneering method based on atomic force microscopy. Our results demonstrate that, at odds with expectations, compression is not generated inside grain boundaries but at the edges of gaps where the boundaries intercept the surface. We describe a model wherein this compressive stress is caused by Mullins-type surface diffusion towards the boundaries, generating a kinetic surface profile different from the mechanical equilibrium profile by the Laplace-Young equation. Where the curvatures of both profiles differ, an intrinsic stress is generated in the form of Laplace pressure. The Srolovitz-type surface diffusion that results from the stress counters the Mullins-type diffusion and stabilizes the kinetic surface profile, giving rise to a steady compression regime. The proposed mechanism of competition between surface diffusions would explain the flux and time dependency of compressive stress in polycrystalline thin films.

  19. Polycrystalline Mg2Si thin films: A theoretical investigation of their electronic transport properties

    International Nuclear Information System (INIS)

    Balout, H.; Boulet, P.; Record, M.-C.

    2015-01-01

    The electronic structures and thermoelectric properties of a polycrystalline Mg 2 Si thin film have been investigated by first-principle density-functional theory (DFT) and Boltzmann transport theory calculations within the constant-relaxation time approximation. The polycrystalline thin film has been simulated by assembling three types of slabs each having the orientation (001), (110) or (111) with a thickness of about 18 Å. The effect of applying the relaxation procedure to the thin film induces disorder in the structure that has been ascertained by calculating radial distribution functions. For the calculations of the thermoelectric properties, the energy gap has been fixed at the experimental value of 0.74 eV. The thermoelectric properties, namely the Seebeck coefficient, the electrical conductivity and the power factor, have been determined at three temperatures of 350 K, 600 K and 900 K with respect to both the energy levels and the p-type and n-type doping levels. The best Seebeck coefficient is obtained at 350 K: the S yy component of the tensor amounts to about ±1000 μV K −1 , depending on the type of charge carriers. However, the electrical conductivity is much too small which results in low values of the figure of merit ZT. Structure–property relationship correlations based on directional radial distribution functions allow us to tentatively draw some explanations regarding the anisotropy of the electrical conductivity. Finally, the low ZT values obtained for the polycrystalline Mg 2 Si thin film are paralleled with those recently reported in the literature for bulk chalcogenide glasses. - Graphical abstract: Structure of the polycrystalline thin film of Mg 2 Si. - Author-Highlights: • Polycrystalline Mg 2 Si film has been modelled by DFT approach. • Thermoelectric properties have been evaluated by semi-classical Boltzmann theory. • The structure was found to be slightly disordered after relaxation. • The highest value of Seebeck

  20. Emission Enhancement and Intermittency in Polycrystalline Organolead Halide Perovskite Films

    Directory of Open Access Journals (Sweden)

    Cheng Li

    2016-08-01

    Full Text Available Inorganic-organic halide organometal perovskites have demonstrated very promising performance for opto-electronic applications, such as solar cells, light-emitting diodes, lasers, single-photon sources, etc. However, the little knowledge on the underlying photophysics, especially on a microscopic scale, hampers the further improvement of devices based on this material. In this communication, correlated conventional photoluminescence (PL characterization and wide-field PL imaging as a function of time are employed to investigate the spatially- and temporally-resolved PL in CH3NH3PbI3−xClx perovskite films. Along with a continuous increase of the PL intensity during light soaking, we also observe PL blinking or PL intermittency behavior in individual grains of these films. Combined with significant suppression of PL blinking in perovskite films coated with a phenyl-C61-butyric acid methyl ester (PCBM layer, it suggests that this PL intermittency is attributed to Auger recombination induced by photoionized defects/traps or mobile ions within grains. These defects/traps are detrimental for light conversion and can be effectively passivated by the PCBM layer. This finding paves the way to provide a guideline on the further improvement of perovskite opto-electronic devices.

  1. Characteristics of Al/p-AgGaTe2 polycrystalline thin film Schottky barrier diode

    International Nuclear Information System (INIS)

    Patel, S.S.; Patel, B.H.; Patel, T.S.

    2008-01-01

    An Al/p-AgGaTe 2 polycrystalline thin film schottky barrier diode have been prepared by flash-evaporation of p-AgGaTe 2 onto a pre-deposited film of aluminium. The current-voltage, capacitance-voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Polycrystalline thin films of antimony selenide via chemical bath deposition and post deposition treatments

    International Nuclear Information System (INIS)

    Rodriguez-Lazcano, Y.; Pena, Yolanda; Nair, M.T.S.; Nair, P.K.

    2005-01-01

    We report a method for obtaining thin films of polycrystalline antimony selenide via chemical bath deposition followed by heating the thin films at 573 K in selenium vapor. The thin films deposited from chemical baths containing one or more soluble complexes of antimony, and selenosulfate initially did not show X-ray diffraction (XRD) patterns corresponding to crystalline antimony selenide. Composition of the films, studied by energy dispersive X-ray analyses indicated selenium deficiency. Heating these films in presence of selenium vapor at 573 K under nitrogen (2000 mTorr) resulted in an enrichment of Se in the films. XRD peaks of such films matched Sb 2 Se 3 . Evaluation of band gap from optical spectra of such films shows absorption due to indirect transition occurring in the range of 1-1.2 eV. The films are photosensitive, with dark conductivity of about 2 x 10 -8 (Ω cm) -1 and photoconductivity, about 10 -6 (Ω cm) -1 under tungsten halogen lamp illumination with intensity of 700 W m -2 . An estimate for the mobility life time product for the film is 4 x 10 -9 cm 2 V -1

  3. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Machida, Emi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472 (Japan); Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192 (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka Nishi-ku, Fukuoka 819-0395 (Japan)

    2012-12-17

    We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

  4. Quantum interference magnetoconductance of polycrystalline germanium films in the variable-range hopping regime

    Science.gov (United States)

    Li, Zhaoguo; Peng, Liping; Zhang, Jicheng; Li, Jia; Zeng, Yong; Zhan, Zhiqiang; Wu, Weidong

    2018-06-01

    Direct evidence of quantum interference magnetotransport in polycrystalline germanium films in the variable-range hopping (VRH) regime is reported. The temperature dependence of the conductivity of germanium films fulfilled the Mott VRH mechanism with the form of ? in the low-temperature regime (?). For the magnetotransport behaviour of our germanium films in the VRH regime, a crossover, from negative magnetoconductance at the low-field to positive magnetoconductance at the high-field, is observed while the zero-field conductivity is higher than the critical value (?). In the regime of ?, the magnetoconductance is positive and quadratic in the field for some germanium films. These features are in agreement with the VRH magnetotransport theory based on the quantum interference effect among random paths in the hopping process.

  5. Photovoltaic effect in transition metal modified polycrystalline BiFeO3 thin films

    International Nuclear Information System (INIS)

    Puli, Venkata Sreenivas; Chrisey, Douglas B; Pradhan, Dhiren Kumar; Katiyar, Rajesh Kumar; Misra, Pankaj; Scott, J F; Katiyar, Ram S; Coondoo, Indrani; Panwar, Neeraj

    2014-01-01

    We report photovoltaic (PV) effect in multiferroic Bi 0.9 Sm 0.1 Fe 0.95 Co 0.05 O 3 (BSFCO) thin films. Transition metal modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD). PV response is observed under illumination both in sandwich and lateral electrode configurations. The open-circuit voltage (V oc ) and the short-circuit current density (J sc ) of the films in sandwich electrode configuration under illumination are measured to be 0.9 V and −0.051 µA cm −2 . Additionally, we report piezoresponse for BSFCO films, which confirms ferroelectric piezoelectric behaviour. (paper)

  6. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  7. Direct growth of transparent conducting Nb-doped anatase TiO2 polycrystalline films on glass

    International Nuclear Information System (INIS)

    Yamada, Naoomi; Kasai, Junpei; Hitosugi, Taro; Hoang, Ngoc Lam Huong; Nakao, Shoichiro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2009-01-01

    This paper proposes a novel sputter-based method for the direct growth of transparent conducting Ti 1-x Nb x O 2 (TNO) polycrystalline films on glass, without the need for any postdeposition treatments, by the use of an initial seed-layer. Anatase TNO epitaxial films grown on LaAlO 3 (100) substrates under a reducing atmosphere exhibited a low resistivity (ρ) of (3-6)x10 -4 Ω cm. On glass, however, highly resistive rutile phase polycrystalline films (ρ∼100 Ω cm) formed preferentially under the same conditions. These results suggest that epitaxial stabilization of the oxygen-deficient anatase phase occurs on lattice-matched substrates. To produce a similar effect on a glass surface, we deposited a seed-layer of anatase TNO with excellent crystallinity under an increased oxygen atmosphere. As a result, anatase phase TNO polycrystalline films could be grown even under heavily reducing atmospheres. An optimized film exhibited ρ=1.1x10 -3 Ω cm and optical absorption lower than 10% in the visible region. This ρ value is more than one order of magnitude lower than values reported for directly deposited TNO polycrystalline films. This indicates that the seed-layer method has considerable potential for producing transparent conducting TNO polycrystalline films on glass.

  8. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sreenivas Puli, Venkata, E-mail: pvsri123@gmail.com [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Kumar Pradhan, Dhiren [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States); Gollapudi, Sreenivasulu [Department of Physics, Oakland University, Rochester, MI 48309-4401 (United States); Coondoo, Indrani [Department of Materials and Ceramic and CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Panwar, Neeraj [Department of Physics, Central University of Rajasthan, Bandar Sindri, Kishangarh 305801, Rajasthan (India); Adireddy, Shiva; Chrisey, Douglas B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118 (United States); Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00936 (United States)

    2014-11-15

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO{sub 3} (BFO) thin films have been deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d{sub 33}) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO{sub 3} thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO{sub 3} thin films. • High magnetization ∼35 emu/cm{sup 3} at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO{sub 3} thin films. • A notable piezoelectric constant d{sub 33} ∼94 pm/V was found in BiFeO{sub 3} thin films.

  9. Magnetoelectric coupling effect in transition metal modified polycrystalline BiFeO3 thin films

    International Nuclear Information System (INIS)

    Sreenivas Puli, Venkata; Kumar Pradhan, Dhiren; Gollapudi, Sreenivasulu; Coondoo, Indrani; Panwar, Neeraj; Adireddy, Shiva; Chrisey, Douglas B.; Katiyar, Ram S.

    2014-01-01

    Rare-earth (Sm) and transition metal (Co) modified polycrystalline BiFeO 3 (BFO) thin films have been deposited on Pt/TiO 2 /SiO 2 /Si substrate successfully through pulsed laser deposition (PLD) technique. Piezoelectric, leakage current and temperature dependent dielectric and magnetic behaviour were investigated for the films. Typical “butterfly-shaped” loop were observed in BSFCO films with an effective piezoelectric constant (d 33 ) ∼94 pm/V at 0.6 MV/cm. High dielectric constant ∼900 and low dielectric loss ∼0.25 were observed at room temperature. M–H loops have shown relatively high saturation magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. Enhanced magnetoelectric coupling response is observed under applied magnetic field. The multiferroic, piezoelectric, leakage current behaviours were explored. Such studies should be helpful in designing multiferroic materials based on BSFCO films. - Highlights: • Transition metal modified polycrystalline BiFeO 3 thin films prepared using PLD. • High ME-coupling response was observed in co-substituted BiFeO 3 thin films. • High magnetization ∼35 emu/cm 3 at a maximum field of H ∼20 kOe. • Low leakage current might be due to co-substitution in BiFeO 3 thin films. • A notable piezoelectric constant d 33 ∼94 pm/V was found in BiFeO 3 thin films

  10. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  11. Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

    International Nuclear Information System (INIS)

    Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

    1996-01-01

    The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

  12. Significant enhancement of the thermoelectric figure of merit of polycrystalline Si films by reducing grain size

    International Nuclear Information System (INIS)

    Valalaki, K; Nassiopoulou, A G; Vouroutzis, N

    2016-01-01

    The thermoelectric properties of p-type polycrystalline silicon thin films deposited by low pressure chemical vapour deposition (LPCVD) were accurately determined at room temperature and the thermoelectric figure of merit was deduced as a function of film thickness, ranging from 100 to 500 nm. The effect of film thickness on their thermoelectric performance is discussed. More than threefold increase in the thermoelectric figure of merit of the 100 nm thick polysilicon film was observed compared to the 500 nm thick film, reaching a value as high as 0.033. This enhancement is mainly the result of the smaller grain size in the thinner films. With the decrease in grain size the resistivity of the films is increased twofold and electrical conductivity decreased, however the Seebeck coefficient is increased by 30% and the thermal conductivity is decreased eightfold, being mainly at the origin of the increased figure of merit of the 100 nm film. Our experimental results were compared to known theoretical models and the possible mechanisms involved are presented and discussed. (paper)

  13. Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

    International Nuclear Information System (INIS)

    Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

    2011-01-01

    We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

  14. Dominant pinning mechanisms in YBa2Cu3O7-x films on single and polycrystalline yttria stabilized zirconia substrates

    Science.gov (United States)

    Harshavardhan, K. S.; Rajeswari, M.; Hwang, D. M.; Chen, C. Y.; Sands, T.; Venkatesan, T.; Tkaczyk, J. E.; Lay, K. W.; Safari, A.

    1992-04-01

    Critical-current densities have been measured in YBa2Cu3O7-x films deposited on (100) yttria stabilized zirconia (YSZ) and polycrystalline YSZ substrates as a function of temperature (4.5-88 K), magnetic field (0-1 T) and orientation relative to the applied field. The results indicate that in films on polycrystalline substrates, surface and interface pinning play a dominant role at high temperatures. In films on (100) YSZ, pinning is mainly due to intrinsic layer pinning as well as extrinsic pinning associated with the interaction of the fluxoids with point defects and low energy planar (2D) boundaries. The differences are attributed to the intrinsic rigidity of single fluxoids which is reduced in films on polycrystalline substrates thereby weakening the intrinsic layer pinning.

  15. High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

    Science.gov (United States)

    Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

    2012-06-01

    Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

  16. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  17. Very high-cycle fatigue failure in micron-scale polycrystalline silicon films : Effects of environment and surface oxide thickness

    NARCIS (Netherlands)

    Alsem, D. H.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

    2007-01-01

    Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up

  18. ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES

    Directory of Open Access Journals (Sweden)

    Peter Pikna

    2014-10-01

    Full Text Available Thin film polycrystalline silicon (poly-Si solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ. Tested temperature of the sample (55°C – 110°C was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

  19. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant

    2018-05-17

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  20. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant; Shervin, Shahab; Sun, Haiding; Yarali, Milad; Chen, Jie; Lin, Ronghui; Li, Kuang-Hui; Li, Xiaohang; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2018-01-01

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  1. Thermal transport properties of polycrystalline tin-doped indium oxide films

    International Nuclear Information System (INIS)

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-01-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

  2. Effect of Grain Boundaries on the Performance of Thin-Film-Based Polycrystalline Silicon Solar Cells: A Numerical Modeling

    Science.gov (United States)

    Chhetri, Nikita; Chatterjee, Somenath

    2018-01-01

    Solar cells/photovoltaic, a renewable energy source, is appraised to be the most effective alternative to the conventional electrical energy generator. A cost-effective alternative of crystalline wafer-based solar cell is thin-film polycrystalline-based solar cell. This paper reports the numerical analysis of dependency of the solar cell parameters (i.e., efficiency, fill factor, open-circuit voltage and short-circuit current density) on grain size for thin-film-based polycrystalline silicon (Si) solar cells. A minority carrier lifetime model is proposed to do a correlation between the grains, grain boundaries and lifetime for thin-film-based polycrystalline Si solar cells in MATLAB environment. As observed, the increment in the grain size diameter results in increase in minority carrier lifetime in polycrystalline Si thin film. A non-equivalent series resistance double-diode model is used to find the dark as well as light (AM1.5) current-voltage (I-V) characteristics for thin-film-based polycrystalline Si solar cells. To optimize the effectiveness of the proposed model, a successive approximation method is used and the corresponding fitting parameters are obtained. The model is validated with the experimentally obtained results reported elsewhere. The experimentally reported solar cell parameters can be found using the proposed model described here.

  3. Preparation and characterization of carbonate terminated polycrystalline Al2O3/Al films

    International Nuclear Information System (INIS)

    Tornow, C.; Noeske, P.-L.M.; Dieckhoff, S.; Wilken, R.; Gaertner, K.

    2005-01-01

    X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface reactivity of polycrystalline Al films in contact with a gas mixture of carbon dioxide and oxygen at room temperature. Based on the characterization of interactions between these substrates and the individual gases at selected exposures, various surface functionalities were identified. Simultaneously dosing both carbon dioxide and oxygen is shown to create surface-terminating carbonate species, which contribute to inhibiting the formation of an Al 2 O 3 layer. Finally, a reaction scheme is suggested to account for the observed dependence of surface group formation on the dosing conditions

  4. Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Song Dengyuan; Inns, Daniel; Straub, Axel; Terry, Mason L.; Campbell, Patrick; Aberle, Armin G.

    2006-01-01

    Polycrystalline silicon (poly-Si) thin-films are made on planar and textured glass substrates by solid phase crystallization (SPC) of in situ doped amorphous silicon (a-Si) deposited by electron-beam evaporation. These materials are referred to by us as EVA materials (SPC of evaporated a-Si). The properties of EVA poly-Si films are characterised by Raman microscopy, transmission electron microscopy, and X-ray diffraction. A narrow and symmetrical Raman peak at a wave number of about 520 cm -1 is observed for all samples, showing that the films are fully crystallized. X-ray diffraction (XRD) reveals that the films are preferentially (111)-oriented. Furthermore, the full width at half maximum of the dominant (111) XRD peaks indicates that the structural quality of the films is affected by the a-Si deposition temperature and the surface morphology of the glass substrates. A-Si deposition at 200 instead of 400 deg. C leads to an enhanced poly-Si grain size. On textured glass, the addition of a SiN barrier layer between the glass and the Si improves the poly-Si material quality. No such effect occurs on planar glass. Mesa-type solar cells are made from these EVA films on planar and textured glass. A strong correlation between the cells' current-voltage characteristics and their crystalline material quality is observed

  5. Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

    KAUST Repository

    Mi, W. B.; Guo, Z. B.; Duan, X. F.; Zhang, X. J.; Bai, H. L.

    2013-01-01

    Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.

  6. Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

    KAUST Repository

    Mi, W. B.

    2013-06-07

    Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.

  7. Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

    International Nuclear Information System (INIS)

    Pereira, L.; Barquinha, P.; Fortunato, E.; Martins, R.

    2005-01-01

    In this work, metal induced crystallization using nickel was employed to obtain polycrystalline silicon by crystallization of amorphous films for thin film transistor applications. The devices were produced through only one lithographic process with a bottom gate configuration using a new gate dielectric consisting of a multi-layer of aluminum oxide/titanium oxide produced by atomic layer deposition. The best results were obtained for TFTs with the active layer of poly-Si crystallized for 20 h at 500 deg. C using a nickel layer of 0.5 nm where the effective mobility is 45.5 cm 2 V -1 s -1 . The threshold voltage, the on/off current ratio and the sub-threshold voltage are, respectively, 11.9 V, 5.55x10 4 and 2.49 V/dec

  8. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  9. Fatigue characteristics of polycrystalline silicon thin-film membrane and its dependence on humidity

    International Nuclear Information System (INIS)

    Tanemura, Tomoki; Yamashita, Shuichi; Wado, Hiroyuki; Takeuchi, Yukihiro; Tsuchiya, Toshiyuki; Tabata, Osamu

    2013-01-01

    This paper describes fatigue characteristics of a polycrystalline silicon thin-film membrane under different humidity evaluated by out-of-plane resonant vibration. The membrane, without the surface of sidewalls by patterning of photolithography and etching process, was applied to evaluate fatigue characteristics precisely against the changes in the surrounding humidity owing to narrower deviation in the fatigue lifetime. The membrane has 16 mm square-shaped multilayered films consisting of a 250 or 500 nm thick polysilicon film on silicon dioxide and silicon nitride underlying layers. A circular weight of 12 mm in diameter was placed at the center of the membrane to control the resonant frequency. Stress on the polysilicon film was generated by deforming the membrane oscillating the weight in the out-of-plane direction. The polysilicon film was fractured by fatigue damage accumulation under cyclic stress. The lifetime of the polysilicon membrane extended with lower relative humidity, especially at 5%RH. The results of the fatigue tests were well formulated with Weibull's statistics and Paris’ law. The dependence of fatigue characteristics on humidity has been quantitatively revealed for the first time. The crack growth rate indicated by the fatigue index decreased with the reduction in humidity, whereas the deviation of strength represented by the Weibull modulus was nearly constant against humidity. (paper)

  10. Study on optimizing ultrasonic irradiation period for thick polycrystalline PZT film by hydrothermal method.

    Science.gov (United States)

    Ohta, Kanako; Isobe, Gaku; Bornmann, Peter; Hemsel, Tobias; Morita, Takeshi

    2013-04-01

    The hydrothermal method utilizes a solution-based chemical reaction to synthesize piezoelectric thin films and powders. This method has a number of advantages, such as low-temperature synthesis, and high purity and high quality of the product. In order to promote hydrothermal reactions, we developed an ultrasonic assisted hydrothermal method and confirmed that it produces dense and thick lead-zirconate-titanate (PZT) films. In the hydrothermal method, a crystal growth process follows the nucleation process. In this study, we verified that ultrasonic irradiation is effective for the nucleation process, and there is an optimum irradiation period to obtain thicker PZT films. With this optimization, a 9.2-μm-thick PZT polycrystalline film was obtained in a single deposition process. For this film, ultrasonic irradiation was carried out from the beginning of the reaction for 18 h, followed by a 6 h deposition without ultrasonic irradiation. These results indicate that the ultrasonic irradiation mainly promotes the nucleation process. Copyright © 2012 Elsevier B.V. All rights reserved.

  11. Visible sub-band gap photoelectron emission from nitrogen doped and undoped polycrystalline diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Elfimchev, S., E-mail: sergeyel@tx.technion.ac.il; Chandran, M.; Akhvlediani, R.; Hoffman, A.

    2017-07-15

    Highlights: • Nitrogen related centers in diamond film are mainly responsible for visible sub-band-gap photoelectron emission. • The influence of film thickness and substrate on the measured photoelectron emission yields was not found. • Nanocrystalline diamonds have low electron emission yields most likely because of high amount of defects. • Visible sub-band gap photoelectron emission may increase with temperature due to electron trapping/detrapping processes. - Abstract: In this study the origin of visible sub-band gap photoelectron emission (PEE) from polycrystalline diamond films is investigated. The PEE yields as a function of temperature were studied in the wavelengths range of 360–520 nm. Based on the comparison of electron emission yields from diamond films deposited on silicon and molybdenum substrates, with different thicknesses and nitrogen doping levels, we suggested that photoelectrons are generated from nitrogen related centers in diamond. Our results show that diamond film thickness and substrate material have no significant influence on the PEE yield. We found that nanocrystalline diamond films have low electron emission yields, compared to microcrystalline diamond, due to the presence of high amount of defects in the former, which trap excited electrons before escaping into the vacuum. However, the low PEE yield of nanocrystalline diamond films was found to increase with temperature. The phenomenon was explained by the trap assisted photon enhanced thermionic emission (ta-PETE) model. According to the ta-PETE model, photoelectrons are trapped by shallow traps, followed by thermal excitation at elevated temperatures and escape into the vacuum. Activation energies of trap levels were estimated for undoped nanocrystalline, undoped microcrystalline and N-doped diamond films using the Richardson-Dushman equation, which gives 0.13, 0.39 and 0.04 eV, respectively. Such low activation energy of trap levels makes the ta-PETE process very

  12. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    Polycrystalline-thin-film thermophotovoltaic (TPV) cells have excellent potential for reducing the cost of TPV generators so as to address the hitherto inaccessible and highly competitive markets such as self-powered gas-fired residential warm air furnaces and energy-efficient electric cars, etc. Recent progress in polycrystalline-thin-film solar cells have made it possible to satisfy the diffusion length and intrinsic junction rectification criteria for TPV cells operating at high fluences. Continuous ranges of direct bandgaps of the ternary and pseudoternary compounds such as Hg1-xCdxTe, Pb1-xCdxTe, Hg1-xZnxTe, and Pb1-xZnxS cover the region of interest of 0.50-0.75 eV for efficient TPV conversion. Other ternary and pseudoternary compounds which show direct bandgaps in most of or all of the 0.50-0.75 eV range are Pb1-xZnxTe, Sn1-xCd2xTe2, Pb1-xCdxSe, Pb1-xZnxSe, and Pb1-xCdxS. Hg1-xCdxTe (with x~0.21) has been studied extensively for infrared detectors. PbTe and Pb1-xSnxTe have also been studied for infrared detectors. Not much work has been carried out on Hg1-xZnxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe alloys cover a wide range of cut-off wavelengths from the far infrared to the near visible. Acceptors and donors are introduced in these materials by excess non-metal (Te) and excess metal (Hg and Pb) respectively. Extrinsic acceptor impurities are Cu, Au, and As while and In and Al are donor impurities. Hg1-xCdxTe thin films have been deposited by isothermal vapor-phase epitaxy (VPE), liquid phase epitaxy (LPE), hot-wall metalorganic chemical vapor deposition (MOCVD), electrodeposition, sputtering, molecular beam epitaxy (MBE), laser-assisted evaporation, and vacuum evaporation with or without hot-wall enclosure. The challenge in the preparation of Hg1-xCdxTe is to provide excess mercury incidence rate, to optimize the deposition parameters for enhanced mercury incorporation, and to achieve the requisite stoichiometry, grain size, and doping. MBE and MOCVD

  13. Transparent conducting properties of anatase Ti0.94Nb0.06O2 polycrystalline films on glass substrate

    International Nuclear Information System (INIS)

    Hitosugi, T.; Ueda, A.; Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S.; Shimada, T.; Hasegawa, T.

    2008-01-01

    We report on transparent conducting properties of anatase Ti 0.94 Nb 0.06 O 2 (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H 2 -annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10 -4 Ω cm and 1.5 x 10 -3 Ω cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films

  14. Thermally stimulated currents in polycrystalline diamond films and their application to ultraviolet dosimetry

    International Nuclear Information System (INIS)

    Trajkov, E.; Prawer, S.

    1999-01-01

    Quantifying individual exposure to solar ultraviolet radiation (UVR) is imperative to understanding the epidemiology of UVR related skin cancer. The development of personal UVR dosimeters is hence essential for obtaining data regarding individual UVR exposure, which can then be used to establish appropriate protective measures for occupational and recreational exposure. Because diamond is a tissue equivalent material and has a wide band-gap, CVD polycrystalline diamond has been proposed for use in solar-blind UV dosimetry. It has been reported that the photoconductivity in polycrystalline diamond films is enhanced after UV illumination Photo-generated carriers can be trapped at some deep levels after illumination. Because these levels are deep the thermal release of carriers is a slow process at room temperature. Therefore the new carrier distribution reached after illumination can result in a metastable state because the temperature is too low to restore the initial equilibrium. The sample can be bought back to initial equilibrium by heating. If the current is recorded during heating of the samples one can observe current peaks corresponding to the thermal release of trapped carriers, the so-called thermally stimulated currents (TSC). From first-order kinetics, we find that the TSC intensity is proportional to the initial density of trapped carriers, n to . Since n to varies with the radiation dose, the measurement of TSC can find an application in radiation dosimetry since the measurement of TSC gives a direct measure of that dose. Nitrogen can be used to introduce deep traps in diamond. This investigation will involve examining the affect of the nitrogen concentration on the irradiation response of the films. Furthermore, we will analyse the fading rate of the TSC signal. If diamond films are to have a practical application in UVR dosimetry, then ideally we require a linear relationship between the dose response and the TSC, and we also require a low fading rate

  15. OPTOELECTRONIC PROPERTIES OF CdS – AgInS2 SOLAR CELLS

    Directory of Open Access Journals (Sweden)

    M. A. Abdullaev

    2016-01-01

    Full Text Available Aim. To conduct experimental studies of optoelectronic properties of CdS - AgInS2 solar cells.Methods. AgInS2 films for solar cell CdS-AgInS2 were obtained by magnetron sputtering of crystalline targets derived from bulk ingots. Cadmium sulfide layers were deposited on the AgInS2 films by an electrochemical method in cadmium salts solution, thiourea and ammonia. AgInS2 bulk crystals were obtained in two stages: a direct fusion of the primary components (99,999 in a stoichiometric ratio, followed by directional solidification in a vertical furnace; re-synthesis has been performed on a staggered basis by heating the obtained ingots at temperatures close to the melting points of elements in the two-zone horizontal furnace.Findings. The paper presents the results of experimental studies of the electrical properties and photosensitivity of CdS-AgInS2 film heterojunction obtained by the magnetron. We measured the current-voltage characteristics and quantum efficiency of photoconversion at temperatures up to 250-356 K. We also identified the short circuit current of up to 25 mA/cm2 and open circuit voltage of 0.38 V.Conclusions. The study of the properties of solar cells in recent years has an important place. The results presented in the work would contribute to more efficient conversion of solar energy into electricity.

  16. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

    2002-06-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  17. Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

    International Nuclear Information System (INIS)

    Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

    2002-01-01

    The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

  18. Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium

    Science.gov (United States)

    Pertsev, N. A.; Zembilgotov, A. G.; Waser, R.

    1998-08-01

    The effective dielectric, piezoelectric, and elastic constants of polycrystalline ferroelectric materials are calculated from single-crystal data by an advanced method of effective medium, which takes into account the piezoelectric interactions between grains in full measure. For bulk BaTiO3 and PbTiO3 polarized ceramics, the dependences of material constants on the remanent polarization are reported. Dielectric and elastic constants are computed also for unpolarized c- and a-textured ferroelectric thin films deposited on cubic or amorphous substrates. It is found that the dielectric properties of BaTiO3 and PbTiO3 polycrystalline thin films strongly depend on the type of crystal texture. The influence of two-dimensional clamping by the substrate on the dielectric and piezoelectric responses of polarized films is described quantitatively and shown to be especially important for the piezoelectric charge coefficient of BaTiO3 films.

  19. In-situ Indentation and Correlated Precession Electron Diffraction Analysis of a Polycrystalline Cu Thin Film

    Science.gov (United States)

    Guo, Qianying; Thompson, Gregory B.

    2018-04-01

    In-situ TEM nanoindentation of a polycrystalline Cu film was cross-correlated with precession electron diffraction (PED) to quantify the microstructural evolution. The use of PED is shown to clearly reveal features, such as grain size, that are easily masked by diffraction contrast created by the deformation. Using PED, the accompanying grain refinement and change in texture as well as the preservation of specific grain boundary structures, including a ∑3 boundary, under the indent impression were quantified. The nucleation of dislocations, evident in low-angle grain boundary formations, was also observed under the indent. PED quantification of texture gradients created by the indentation process linked well to bend contours observed in the bright-field images. Finally, PED enabled generating a local orientation spread map that gave an approximate estimation of the spatial distribution of strain created by the indentation impression.

  20. Ferroelectricity and Piezoelectricity in Free-Standing Polycrystalline Films of Plastic Crystals.

    Science.gov (United States)

    Harada, Jun; Yoneyama, Naho; Yokokura, Seiya; Takahashi, Yukihiro; Miura, Atsushi; Kitamura, Noboru; Inabe, Tamotsu

    2018-01-10

    Plastic crystals represent a unique compound class that is often encountered in molecules with globular structures. The highly symmetric cubic crystal structure of plastic crystals endows these materials with multiaxial ferroelectricity that allows a three-dimensional realignment of the polarization axes of the crystals, which cannot be achieved using conventional molecular ferroelectric crystals with low crystal symmetry. In this work, we focused our attention on malleability as another characteristic feature of plastic crystals. We have synthesized the new plastic/ferroelectric ionic crystals tetramethylammonium tetrachloroferrate(III) and tetramethylammonium bromotrichloroferrate(III), and discovered that free-standing translucent films can be easily prepared by pressing powdered samples of these compounds. The thus obtained polycrystalline films exhibit ferroelectric polarization switching and a relatively large piezoelectric response at room temperature. The ready availability of functional films demonstrates the practical utility of such plastic/ferroelectric crystals, and considering the vast variety of possible constituent cations and anions, a wide range of applications should be expected for these unique and attractive functional materials.

  1. Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

    2011-09-01

    The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

  2. Cathodoluminescence characteristics of polycrystalline diamond films grown by cyclic deposition method

    International Nuclear Information System (INIS)

    Seo, Soo-Hyung; Park, Chang-Kyun; Park, Jin-Seok

    2002-01-01

    Polycrystalline diamond films were deposited using a cyclic deposition method where the H 2 plasma for etching (t E ) and the CH 4 +H 2 plasma for growing (t G ) are alternately modulated with various modulation ratios (t E /t G ). From the measurement of full width at half maximum and I D /I G intensity ratio obtained from the Raman spectra, it was found that diamond defects and non-diamond carbon phases were reduced a little by adopting the cyclic deposition method. From the cathodoluminescence (CL) characteristics measured for deposited films, the nitrogen-related band (centered at approximately 590 nm) as well as the so-called band-A (centered at approximately 430 nm) were observed. As the cyclic ratio t E /t G increased, the relative intensity ratio of band-A to nitrogen-related band (I A /I N ) was found to monotonically decrease. In addition, analysis of X-ray diffraction spectra and scanning electron microscope morphologies showed that CL characteristics of deposited diamond films were closely related to their crystal orientations and morphologies

  3. A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar (Germany); Thamburaja, P., E-mail: prakash.thamburaja@gmail.com [Department of Mechanical & Materials Engineering, Universiti Kebangsaan Malaysia (UKM), Bangi 43600 (Malaysia); Rabczuk, T., E-mail: timon.rabczuk@tdt.edu.vn [Division of Computational Mechanics, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Civil Engineering, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)

    2016-12-15

    A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substrate and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.

  4. Mueller-matrix of laser-induced autofluorescence of polycrystalline films of dried peritoneal fluid in diagnostics of endometriosis

    Science.gov (United States)

    Ushenko, Yuriy A.; Koval, Galina D.; Ushenko, Alexander G.; Dubolazov, Olexander V.; Ushenko, Vladimir A.; Novakovskaia, Olga Yu.

    2016-07-01

    This research presents investigation results of the diagnostic efficiency of an azimuthally stable Mueller-matrix method of analysis of laser autofluorescence of polycrystalline films of dried uterine cavity peritoneal fluid. A model of the generalized optical anisotropy of films of dried peritoneal fluid is proposed in order to define the processes of laser autofluorescence. The influence of complex mechanisms of both phase (linear and circular birefringence) and amplitude (linear and circular dichroism) anisotropies is taken into consideration. The interconnections between the azimuthally stable Mueller-matrix elements characterizing laser autofluorescence and different mechanisms of optical anisotropy are determined. The statistical analysis of coordinate distributions of such Mueller-matrix rotation invariants is proposed. Thereupon the quantitative criteria (statistic moments of the first to the fourth order) of differentiation of polycrystalline films of dried peritoneal fluid, group 1 (healthy donors) and group 2 (uterus endometriosis patients), are determined.

  5. Photoluminescence of epitactical and polycrystalline CuInS2 layers for thin-film solar cells

    International Nuclear Information System (INIS)

    Eberhardt, J.

    2007-01-01

    The present thesis deals with one- and polycrystalline CuInS 2 absorber layers for thin-film solar cells and especially with their optical and structural characterization. By means of detailed temperature- and power-dependent photoluminescence measurements in epitactical and polycrystalline absorber layers different radiative transitions could be analyzed and identified. The spectra were dominated by broad luminescence bands of deep perturbing levels. The implantation of hydrogen at low energies led to a passivation of these perturbing levels. On the base of the optical studies on epitactical and polycrystalline absorber layers a new improved defect model for CuInS 2 could be developed. The model contains two donor and two acceptor levels with following ionization energies: D-1=46 meV, D-2=87 meV, A-1=70 meV, and A-2=119 meV

  6. Tribological performance of polycrystalline tantalum-carbide-incorporated diamond films on silicon substrates

    Science.gov (United States)

    Ullah, Mahtab; Rana, Anwar Manzoor; Ahmed, E.; Malik, Abdul Sattar; Shah, Z. A.; Ahmad, Naseeb; Mehtab, Ujala; Raza, Rizwan

    2018-05-01

    Polycrystalline tantalum-carbide-incorporated diamond coatings have been made on unpolished side of Si (100) wafer by hot filament chemical vapor deposition process. Morphology of the coatings has been found to vary from (111) triangular-facetted to predominantly (111) square-faceted by increasing the concentration of tantalum carbide. The results have been compared to those of a diamond reference coating with no tantalum content. An increase in roughness has been observed with the increase of tantalum carbide (TaC) due to change in morphology of the diamond films. It is noticed that roughness of the coatings increases as grains become more square-faceted. It is found that diamond coatings involving tantalum carbide are not as resistant as diamond films with no TaC content and the coefficient of friction for such coatings with microcrystalline grains can be manipulated to 0·33 under high vacuum of 10-7 Torr. Such a low friction coefficient value enhances tribological behavior of unpolished Si substrates and can possibly be used in sliding applications.

  7. Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers

    International Nuclear Information System (INIS)

    Okhotnikov, V V; Linnik, S A; Gaidaichuk, A V; Shashev, D V; Nazarova, G Yu; Yurchenko, V I

    2016-01-01

    A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 μm were obtained. A high density of polycrystallites in the coating area was reached (up to 32·10 7 pcs/cm 2 ). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of “hot filaments” in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments,). (paper)

  8. Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers

    Science.gov (United States)

    Okhotnikov, V. V.; Linnik, S. A.; Gaidaichuk, A. V.; Shashev, D. V.; Nazarova, G. Yu; Yurchenko, V. I.

    2016-02-01

    A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 μm were obtained. A high density of polycrystallites in the coating area was reached (up to 32·107 pcs/cm2). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of “hot filaments” in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments,).

  9. Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

    Science.gov (United States)

    Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

    2018-05-01

    Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

  10. Efficiency limitations of polycrystalline thin film solar cells: case of Cu(In,Ga)Se2

    International Nuclear Information System (INIS)

    Werner, Juergen H.; Mattheis, Julian; Rau, Uwe

    2005-01-01

    Small-area Cu(In,Ga)Se 2 thin film solar cells have reached more than 19% efficiencies. Compared to other polycrystalline materials this efficiency value is remarkable. Nevertheless, the 19% for Cu(In,Ga)Se 2 range more than 6% (absolute) below the world's best single-crystalline Si cells and almost 14% below the upper theoretical limit of 33% for an ideal black body cell with infinitely large mobility and radiative recombination only. About 4% out of the 14% are of optical nature, additional 3% stem from the limited mobility/diffusion length and from band gap fluctuations with a standard deviation no. sigmano. g no. approxno. 50 meV due to spatial variations of composition and stoichiometry of the quaternary compound Cu(In,Ga)Se 2 . Thus, about 26% efficiency would be possible if there were only these band gap fluctuations. Additional, voltage-dependent electrostatic potential fluctuations push down the efficiency further to 19%: The polycrystalline Cu(In,Ga)Se 2 which is unavoidably structurally inhomogeneous due to dislocations, grain boundaries, point defects, etc. is also electrostatically inhomogeneous because of charged defects. Electrostatic potential fluctuations at the valence and conduction band edge may be not only responsible for a high saturation current density but also for the ideality factor in the current/voltage curve. The band gap and electrostatic potential fluctuations make the effective band gap which controls the intrinsic carrier density smaller than the average optical gap. The (zero bias) electrostatic potential fluctuations are here derived from the ideality factors of the current/voltage curve. The ideality factor reflects the voltage-induced electrostatic homogenization of the sample. For the world's best Cu(In,Ga)Se 2 cells with an ideality factor of n id =1.5, we estimate zero bias electrostatic potential fluctuations with a standard deviation no. sigmano. elec no. approxno. 140 meV

  11. Nanosecond Time-Resolved Microscopic Gate-Modulation Imaging of Polycrystalline Organic Thin-Film Transistors

    Science.gov (United States)

    Matsuoka, Satoshi; Tsutsumi, Jun'ya; Matsui, Hiroyuki; Kamata, Toshihide; Hasegawa, Tatsuo

    2018-02-01

    We develop a time-resolved microscopic gate-modulation (μ GM ) imaging technique to investigate the temporal evolution of the channel current and accumulated charges in polycrystalline pentacene thin-film transistors (TFTs). A time resolution of as high as 50 ns is achieved by using a fast image-intensifier system that could amplify a series of instantaneous optical microscopic images acquired at various time intervals after the stepped gate bias is switched on. The differential images obtained by subtracting the gate-off image allows us to acquire a series of temporal μ GM images that clearly show the gradual propagation of both channel charges and leaked gate fields within the polycrystalline channel layers. The frontal positions for the propagations of both channel charges and leaked gate fields coincide at all the time intervals, demonstrating that the layered gate dielectric capacitors are successively transversely charged up along the direction of current propagation. The initial μ GM images also indicate that the electric field effect is originally concentrated around a limited area with a width of a few micrometers bordering the channel-electrode interface, and that the field intensity reaches a maximum after 200 ns and then decays. The time required for charge propagation over the whole channel region with a length of 100 μ m is estimated at about 900 ns, which is consistent with the measured field-effect mobility and the temporal-response model for organic TFTs. The effect of grain boundaries can be also visualized by comparison of the μ GM images for the transient and the steady states, which confirms that the potential barriers at the grain boundaries cause the transient shift in the accumulated charges or the transient accumulation of additional charges around the grain boundaries.

  12. Aluminum-doped Zn O polycrystalline films prepared by co-sputtering of a Zn O-Al target

    Energy Technology Data Exchange (ETDEWEB)

    Becerril, M.; Silva L, H.; Guillen C, A.; Zelaya A, O. [Instituto Politecnico Nacional, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2014-07-01

    Aluminum-doped Zinc oxide polycrystalline thin films (Azo) were grown on 7059 Corning glass substrates at room temperature by co-sputtering from a Zn O-Al target. The target was designed as follows, high purity elemental Aluminum was evaporated onto a Zn O target covering small areas. The structural, optical and electrical properties were analyzed as a function of Al content. The Al doped Zn O polycrystalline films showed an n-type conductivity. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Al incorporation within the Zn O lattice. In both cases, the changes are of several orders of magnitude. From the results, we conclude that, using these Zn O-Al targets, n-type Al doped Zn O polycrystalline films with high transmittance and low resistivity can be obtained. The crystalline structure of the films was determined by X-ray diffraction. Atomic Force Microscopy images were obtained with an Auto probe C P (Veeco Metrology Group) Microscope. (Author)

  13. Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

    International Nuclear Information System (INIS)

    Elsherif, O S; Vernon-Parry, K D; Evans-Freeman, J H; May, P W

    2012-01-01

    High-resolution Laplace deep-level transient spectroscopy (LDLTS) and thermal admittance spectroscopy (TAS) have been used to determine the effect of boron (B) concentration on the electronic states in polycrystalline chemical vapour deposition diamond thin films grown on silicon by the hot filament method. A combination of high-resolution LDLTS and direct-capture cross-sectional measurements was used to investigate whether the deep electronic states present in the layers originated from point or extended defects. There was good agreement between data on deep electronic levels obtained from DLTS and TAS experiments. Two hole traps, E1 (0.29 eV) and E2 (0.53 eV), were found in a film with a boron content of 1 × 10 19 cm −3 . Both these levels and an additional level, E3 (0.35 eV), were found when the B content was increased to 4 × 10 19 cm −3 . Direct capture cross-sectional measurements of levels E1 and E2 show an unusual dependence on the fill-pulse duration which is interpreted as possibly indicating that the levels are part of an extended defect. The E3 level found in the more highly doped film consisted of two closely spaced levels, both of which show point-like defect characteristics. The E1 level may be due to B-related extended defects within the grain boundaries, whereas the ionization energy of the E2 level is in agreement with literature values from ab initio calculations for B–H complexes. We suggest that the E3 level is due to isolated B-related centres in bulk diamond. (paper)

  14. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    Science.gov (United States)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  15. Laser-induced surface recrystallization of polycrystalline PbI2 thick films for X-ray detector application

    Science.gov (United States)

    Sun, Hui; Zhao, Beijun; Zhu, Xinghua; Zhu, Shifu; Yang, Dingyu; Wangyang, Peihua; Gao, Xiuyin

    2018-01-01

    In this work, laser-induced surface recrystallization process was developed to improve the surface properties and device performance of the polycrystalline PbI2 thick films prepared by using close space vapor deposition method. A continuous polycrystalline PbI2 recrystallized layer with a better mechanical strength and reflectivity improved from 2% to 4%-6% was obtained by this recrystallization process for the films with mechanical pretreatment. Other polytypes is absent in the recrystallized layer with the 2H-polytype remaining before and after treatment and obtaining improved electrical and X-ray photoelectric response performance. The pretreatment such as mechanical cutting/polishing and hydrogenation is necessary to lower the non-wetting crystallization behavior during the recrystallization process due to the rough surface state and oxygen contamination.

  16. On the effects of hydrogenation of thin film polycrystalline silicon: A key factor to improve heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Qiu, Y.; Kunz, O.; Fejfar, Antonín; Ledinský, Martin; Teik Chan, B.; Gordon, I.; Van Gestel, D.; Venkatachalm, S.; Egan, R.

    2014-01-01

    Roč. 122, MAR (2014), s. 31-39 ISSN 0927-0248 R&D Projects: GA MŠk 7E10061; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional support: RVO:68378271 Keywords : silicon * thin films * polycrystalline * hydrogenation * Raman spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.337, year: 2014 http://www.sciencedirect.com/science/article/pii/S0927024813006016

  17. Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Skoromets, Volodymyr; Becker, C.; Fejfar, Antonín; Kužel, Petr

    2015-01-01

    Roč. 107, č. 23 (2015), "233901-1"-"233901-5" ISSN 0003-6951 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101216 Institutional support: RVO:68378271 Keywords : thin film polycrystalline silicon * terahertz spectroscopy * passivation * Suns-Voc method * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.142, year: 2015

  18. Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Vaxelaire, N; Labat, S; Thomas, O [Aix-Marseille University, IM2NP, FST avenue Escadrille Normandie Niemen, F-13397 Marseille Cedex (France); Proudhon, H; Forest, S [MINES ParisTech, Centre des materiaux, CNRS UMR 7633, BP 87, 91003 Evry Cedex (France); Kirchlechner, C; Keckes, J [Erich Schmid Institute for Material Science, Austrian Academy of Science and Institute of Metal Physics, University of Leoben, Jahnstrasse 12, 8700 Leoben (Austria); Jacques, V; Ravy, S [Synchrotron SOLEIL, L' Orme des merisiers, Saint-Aubin BP 48, 91192 Gif-sur-Yvette Cedex (France)], E-mail: nicolas.vaxelaire@univ-cezanne.fr

    2010-03-15

    Coherent x-ray diffraction is used to investigate the mechanical properties of a single grain within a polycrystalline thin film in situ during a thermal cycle. Both the experimental approach and finite element simulation are described. Coherent diffraction from a single grain has been monitored in situ at different temperatures. This experiment offers unique perspectives for the study of the mechanical properties of nano-objects.

  19. Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction

    International Nuclear Information System (INIS)

    Vaxelaire, N; Labat, S; Thomas, O; Proudhon, H; Forest, S; Kirchlechner, C; Keckes, J; Jacques, V; Ravy, S

    2010-01-01

    Coherent x-ray diffraction is used to investigate the mechanical properties of a single grain within a polycrystalline thin film in situ during a thermal cycle. Both the experimental approach and finite element simulation are described. Coherent diffraction from a single grain has been monitored in situ at different temperatures. This experiment offers unique perspectives for the study of the mechanical properties of nano-objects.

  20. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0films with 0.3film, which is directly coupled to a periodic compositional variation. - Amorphous SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  1. Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

    Science.gov (United States)

    Munshi, Amit Harenkumar

    with processes suitable for mass production. These are the highest efficiencies reported by any university or national laboratory for polycrystalline thin-film CdTe photovoltaics bettered only by researchers at First Solar Inc. Processing experiments are traditionally designed based on simulation results however in these study microscopic materials characterization has been used as the primary driving force to understand the effects of processing conditions. Every structure and efficiency reported in this study has been extensively studied using microscopic imaging and materials characterization and processing conditions accordingly altered to achieve higher efficiencies. Understanding CdCl2 passivation treatment out of this has been critical to this process. Several observations with regard to effect of CdCl 2 passivation have allowed the use to this treatment to achieve optimum performance. The effects of deposition temperature are also studied in rigorous details. All of these studies have played an important role in optimization of process that lead to high efficiency thin-film CdTe photovoltaic devices. An effort is made in this study to better understand and establish a 3-way relationship between processing conditions, film microstructure and device efficiency for sublimated thin-film CdTe photovoltaics. Some crucial findings include impact of grain size on efficiency of photovoltaic devices and improvement in fill-factor resulting from use of thicker CdTe absorber with larger grain size. An attempt is also made to understand the microstructure as the device efficiency improves from 1% efficiency to over 18% efficiency.

  2. Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

    Science.gov (United States)

    Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki

    1999-07-01

    Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.

  3. Temperature-dependent plastic hysteresis in highly confined polycrystalline Nb films

    Science.gov (United States)

    Waheed, S.; Hao, R.; Zheng, Z.; Wheeler, J. M.; Michler, J.; Balint, D. S.; Giuliani, F.

    2018-02-01

    In this study, the effect of temperature on the cyclic deformation behaviour of a confined polycrystalline Nb film is investigated. Micropillars encapsulating a thin niobium interlayer are deformed under cyclic axial compression at different test temperatures. A distinct plastic hysteresis is observed for samples tested at elevated temperatures, whereas negligible plastic hysteresis is observed for samples tested at room temperature. These results are interpreted using planar discrete dislocation plasticity incorporating slip transmission across grain boundaries. The effect of temperature-dependent grain boundary energy and dislocation mobility on dislocation penetration and, consequently, the size of plastic hysteresis is simulated to correlate with the experimental results. It is found that the decrease in grain boundary energy barrier caused by the increase in temperature does not lead to any appreciable change in the cyclic response. However, dislocation mobility significantly affects the size of plastic hysteresis, with high mobilities leading to a larger hysteresis. Therefore, it is postulated that the experimental observations are predominantly caused by an increase in dislocation mobility as the temperature is increased above the critical temperature of body-centred cubic niobium.

  4. Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Birouk, B.; Madi, D. [Universite de Jijel, Laboratoire d' Etudes et de Modelisation en Electrotechnique (LAMEL), Cite Ouled Aissa, BP 98, Jijel (Algeria)

    2011-08-15

    The study reported in this paper contributes to better understanding the thermal oxidation effect on structural and optical properties of polycrystalline silicon heavily in situ P-LPCVD films. The deposits, doped at levels 3 x 10{sup 19} and 1.6 x 10{sup 20} cm{sup -3}, have been elaborated from silane decomposition (400 mTorrs, 605 C) on monosilicon substrate oriented left angle 111 right angle. The thermal oxidation was performed at temperatures: 850 C during 1 hour, 1000, 1050, and 1100 C during 15 minutes. The XRD spectra analysis pointed out significant left angle 111 right angle texture evolution, while in the case of left angle 220 right angle and left angle 311 right angle textures, the intensities are practically invariant (variations fall in the uncertainty intervals). The optical characterizations showed that refractive index and absorption coefficient are very sensitive to the oxidation treatment, mainly when the doping level is not very high. We think that atomic oxygen acts as defects passivating agent leading to carriers' concentration increasing. Besides, the optical behavior is modeled in visible and near infrared, by a seven-term polynomial function n {sup 2}=f({lambda} {sup 2}), with alternate signs, instead of theoretically unlimited terms number from Drude's model. It has been shown that fitting parameters fall on Gaussian curves like they do in the theoretical model. (orig.)

  5. Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

    Science.gov (United States)

    Ojo, A. A.; Dharmadasa, I. M.

    2017-08-01

    Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

  6. Real time spectroscopic ellipsometry for analysis and control of thin film polycrystalline semiconductor deposition in photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Koirala, Prakash; Attygalle, Dinesh; Aryal, Puruswottam; Pradhan, Puja; Chen, Jie [Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States); Marsillac, Sylvain [Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529 (United States); Ferlauto, Andre S.; Podraza, Nikolas J.; Collins, Robert W. [Center for Photovoltaics Innovation and Commercialization and Department of Physics and Astronomy, University of Toledo, Toledo, OH 43606 (United States)

    2014-11-28

    Real time spectroscopic ellipsometry (RTSE) from the near-infrared to ultraviolet has been applied for analysis of the deposition of polycrystalline thin films that form the basis of two key photovoltaic heterojunction configurations, superstrate SnO{sub 2}/CdS/CdTe and substrate Mo/Cu(In{sub 1−x}Ga{sub x})Se{sub 2}/CdS. The focus of this work is to develop capabilities for monitoring and controlling the key steps in the fabrication of these device structures. Analysis of RTSE data collected during sputter deposition of CdS on a rough SnO{sub 2} transparent top contact provides the time evolution of the CdS effective thickness, or film volume per unit substrate area. This thickness includes interface, bulk, and surface roughness layer components and affects the CdS/CdTe heterojunction performance and the quantum efficiency of the solar cell in the blue region of the solar spectrum. Similarly, analysis of RTSE data collected during co-evaporation of Cu(In{sub 1−x}Ga{sub x})Se{sub 2} (CIGS; x ∼ 0.3) on a rough Mo back contact provides the evolution of a second phase of Cu{sub 2−x}Se within the CIGS layer. During the last stage of CIGS deposition, the In, Ga, and Se co-evaporants convert this Cu{sub 2−x}Se phase to CIGS, and RTSE identifies the endpoint, specifically the time at which complete conversion occurs and single-phase, large-grain CIGS is obtained in this key stage. - Highlights: • Real time spectroscopic ellipsometry (RTSE) study of CdS and CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) films. • RTSE during CdS deposition provides the evolution of the CdS effective thickness. • RTSE for CIGS film enables to measure and control the composition and thickness. • The work leads to the development of optical models for processing steps.

  7. Growth of high-quality CuInSe sub 2 polycrystalline films by magnetron sputtering and vacuum selenization

    CERN Document Server

    Xie Da Tao; Wang Li; Zhu Feng; Quan Sheng Wen; Meng Tie Jun; Zhang Bao Cheng; Chen J

    2002-01-01

    High-quality CuInSe sub 2 thin films have been prepared using a two stages process. Cu and In were co-deposited onto glass substrates by magnetron sputtering method to produce a predominant Cu sub 1 sub 1 In sub 9 phase. The alloy films were selenised and annealed in vacuum at different temperature in the range of 200-500 degree C using elemental selenium in a closed graphite box. X-ray diffraction and scanning electron microscopy were used to characterize the films. It is found that the polycrystalline and single-phase CuInSe sub 2 films were uniform and densely packed with a grain size of about 3.0 mu m

  8. Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

    Science.gov (United States)

    Avila, José; Razado, Ivy; Lorcy, Stéphane; Fleurier, Romain; Pichonat, Emmanuelle; Vignaud, Dominique; Wallart, Xavier; Asensio, María C.

    2013-01-01

    The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. PMID:23942471

  9. Enhanced ferroelectric photoelectrochemical properties of polycrystalline BiFeO{sub 3} film by decorating with Ag nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qing; Shen, Mingrong; Fang, Liang, E-mail: lfang@suda.edu.cn [College of Physics, Optoelectronics and Energy and Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006 (China); Zhou, Yang; You, Lu; Wang, Junling [School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore 639798 (Singapore)

    2016-01-11

    Polycrystalline BiFeO{sub 3} (BFO) films are fabricated on Pt/Ti/SiO{sub 2}/Si(100) substrate as photoelectrode using sol-gel method. The microstructure, optical, and photoelectrochemical (PEC) properties of the films are characterized and optimized by controlling the film thickness. Moreover, the PEC properties of the BFO films are dependent on ferroelectric polarization, which is mainly ascribed to the modulation of band structure at the BFO/electrolyte interface by the polarization. Further enhancement of PEC properties is obtained by decorating the samples with appropriate amounts of Ag nanoparticles, which is attributed to the reduced electron-hole recombination, and localized surface plasmon resonance effect of Ag nanoparticles.

  10. Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

    Science.gov (United States)

    Tuteja, Mohit

    Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does

  11. Overcoming challenges to the formation of high-quality polycrystalline TiO{sub 2}:Ta transparent conducting films by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Neubert, M.; Cornelius, S.; Fiedler, J. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Gebel, T.; Liepack, H. [DTF Technology GmbH, 01108 Dresden (Germany); Kolitsch, A. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); HZDR Innovation GmbH, 01328 Dresden (Germany); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme, 01277 Dresden (Germany)

    2013-08-28

    The work is focused on understanding the physical processes responsible for the modification of the structure, electrical and optical properties of polycrystalline TiO{sub 2}:Ta films formed by annealing of initially amorphous films grown by direct current magnetron sputtering of electrically conductive ceramic targets. It is shown that fine tuning of the oxygen content during deposition of amorphous TiO{sub 2}:Ta films is critical to achieving low resistivity and high optical transmittance after annealing. Increasing the total pressure during magnetron sputter deposition is shown to decrease the sensitivity of the annealed films to the oxygen flow variation during deposition of the initially amorphous layers. Polycrystalline anatase TiO{sub 2}:Ta films of low electrical resistivity (ρ{sub H} = 1.5 × 10{sup −3}Ω cm), high free electron mobility (μ{sub H} = 8 cm{sup 2}/Vs), and low extinction (k{sub 550nm} = 0.006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation/deactivation taking into account the formation of compensating defects at different oxygen pressures. The temperature-dependent transport of the polycrystalline anatase TiO{sub 2}:Ta films is investigated showing the dominant role of the optical phonon scattering in the case of films with an optimum Ti/O ratio.

  12. Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

    KAUST Repository

    Yandjah, L.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Ziani, Ahmed

    2018-01-01

    Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X

  13. Thin polycrystalline diamond films protecting zirconium alloys surfaces: From technology to layer analysis and application in nuclear facilities

    Energy Technology Data Exchange (ETDEWEB)

    Ashcheulov, P. [Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, CZ-182 21, Prague 8 (Czech Republic); Škoda, R.; Škarohlíd, J. [Czech Technical University in Prague, Faculty of Mechanical Engineering, Technická 4, Prague 6, CZ-160 07 (Czech Republic); Taylor, A.; Fekete, L.; Fendrych, F. [Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, CZ-182 21, Prague 8 (Czech Republic); Vega, R.; Shao, L. [Texas A& M University, Department of Nuclear Engineering TAMU-3133, College Station, TX TX 77843 (United States); Kalvoda, L.; Vratislav, S. [Faculty of Nuclear Science and Physical Engineering, Czech Technical University in Prague, Brehova 7, CZ-115 19, Prague 1 (Czech Republic); Cháb, V.; Horáková, K.; Kůsová, K.; Klimša, L.; Kopeček, J. [Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, CZ-182 21, Prague 8 (Czech Republic); Sajdl, P.; Macák, J. [University of Chemistry and Technology, Power Engineering Department, Technická 3, Prague 6, CZ-166 28 (Czech Republic); Johnson, S. [Nuclear Fuel Division, Westinghouse Electric Company, 5801 Bluff Road, Hopkins, SC 29209 (United States); Kratochvílová, I., E-mail: krat@fzu.cz [Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, CZ-182 21, Prague 8 (Czech Republic); Faculty of Nuclear Science and Physical Engineering, Czech Technical University in Prague, Brehova 7, CZ-115 19, Prague 1 (Czech Republic)

    2015-12-30

    Graphical abstract: - Highlights: • In this work we showed that films prepared by MW-LA-PECVD technology can be used as anticorrosion protective layer for Zircaloy2 nuclear fuel claddings at elevated temperatures (950 °C) when α phase of zirconium changes to β phase (more opened for oxygen/hydrogen diffusion). Quality of PCD films was examined by Raman spectroscopy, XPS, SEM, AFM and SIMS analysis. • The polycrystalline diamond films were of high quality - without defects and contaminations. After hot steam oxidation (950 °C) a high level of structural integrity of PCD layer was observed. Both sp{sup 2} and sp{sup 3} C phases were present in the protective PCD layer. Higher resistance and a lower degree of impedance dispersion was found in the hot steam oxidized PCD coated Zircaloy2 samples, which may suggest better protection of the Zircaloy2 surface. The PCD layer blocks the hydrogen diffusion into the Zircaloy2 surface thus protecting the material from degradation. • Hot steam oxidation tests confirmed that PCD coated Zircaloy2 surfaces were effectively protected against corrosion. Presented results demonstrate that the PCD anticorrosion protection can significantly prolong service life of Zircaloy2 nuclear fuel claddings in nuclear reactors even at elevated temperatures. - Abstract: Zirconium alloys can be effectively protected against corrosion by polycrystalline diamond (PCD) layers grown in microwave plasma enhanced linear antenna chemical vapor deposition apparatus. Standard and hot steam oxidized PCD layers grown on Zircaloy2 surfaces were examined and the specific impact of polycrystalline Zr substrate surface on PCD layer properties was investigated. It was found that the presence of the PCD coating blocks hydrogen diffusion into the Zircaloy2 surface and protects Zircaloy2 material from degradation. PCD anticorrosion protection of Zircaloy2 can significantly prolong life of Zircaloy2 material in nuclear reactors even at temperatures above Zr

  14. Modeling and simulation of the deposition/relaxation processes of polycrystalline diatomic structures of metallic nitride films

    Science.gov (United States)

    García, M. F.; Restrepo-Parra, E.; Riaño-Rojas, J. C.

    2015-05-01

    This work develops a model that mimics the growth of diatomic, polycrystalline thin films by artificially splitting the growth into deposition and relaxation processes including two stages: (1) a grain-based stochastic method (grains orientation randomly chosen) is considered and by means of the Kinetic Monte Carlo method employing a non-standard version, known as Constant Time Stepping, the deposition is simulated. The adsorption of adatoms is accepted or rejected depending on the neighborhood conditions; furthermore, the desorption process is not included in the simulation and (2) the Monte Carlo method combined with the metropolis algorithm is used to simulate the diffusion. The model was developed by accounting for parameters that determine the morphology of the film, such as the growth temperature, the interacting atomic species, the binding energy and the material crystal structure. The modeled samples exhibited an FCC structure with grain formation with orientations in the family planes of , and . The grain size and film roughness were analyzed. By construction, the grain size decreased, and the roughness increased, as the growth temperature increased. Although, during the growth process of real materials, the deposition and relaxation occurs simultaneously, this method may perhaps be valid to build realistic polycrystalline samples.

  15. Thin polycrystalline diamond films protecting zirconium alloys surfaces: from technology to layer analysis and application in nuclear facilities

    Czech Academy of Sciences Publication Activity Database

    Ashcheulov, Petr; Škoda, R.; Škarohlíd, J.; Taylor, Andrew; Fekete, Ladislav; Fendrych, František; Vega, R.; Shao, L.; Kalvoda, L.; Vratislav, S.; Cháb, Vladimír; Horáková, K.; Kůsová, Kateřina; Klimša, Ladislav; Kopeček, Jaromír; Sajdl, P.; Macák, J.; Johnson, S.; Kratochvílová, Irena

    2015-01-01

    Roč. 359, Dec (2015), s. 621-628 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GA15-05095S; GA TA ČR TA04020156; GA MŠk LO1409; GA MŠk(CZ) LM2011029 Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132 Institutional support: RVO:68378271 Keywords : metal coatings * thin polycrystalline diamond film * impedance spectroscopy * Raman spectroscopy * XPS Subject RIV: JI - Composite Materials Impact factor: 3.150, year: 2015

  16. Preparation and characterization of carbonate terminated polycrystalline Al{sub 2}O{sub 3}/Al films

    Energy Technology Data Exchange (ETDEWEB)

    Tornow, C. [Fraunhofer-Institute for Manufacturing Technology and Applied Materials Research (IFAM), Adhesive Bonding Technology and Surfaces, Wiener Str. 12, D-28359 Bremen (Germany); Fachhochschule Oldenburg/Ostfriesland/Wilhelmshaven, University of Applied Sciences, Faculty of Technology, Department of Applied Natural Sciences, Engineering Physics, Constantiaplatz 4, D-26723 Emden (Germany); Noeske, P.-L.M. [Fraunhofer-Institute for Manufacturing Technology and Applied Materials Research (IFAM), Adhesive Bonding Technology and Surfaces, Wiener Str. 12, D-28359 Bremen (Germany); Dieckhoff, S. [Fraunhofer-Institute for Manufacturing Technology and Applied Materials Research (IFAM), Adhesive Bonding Technology and Surfaces, Wiener Str. 12, D-28359 Bremen (Germany); Wilken, R. [Fraunhofer-Institute for Manufacturing Technology and Applied Materials Research (IFAM), Adhesive Bonding Technology and Surfaces, Wiener Str. 12, D-28359 Bremen (Germany)]. E-mail: rw@ifam.fraunhofer.de; Gaertner, K. [Fachhochschule Oldenburg/Ostfriesland/Wilhelmshaven, University of Applied Sciences, Faculty of Technology, Department of Applied Natural Sciences, Engineering Physics, Constantiaplatz 4, D-26723 Emden (Germany)

    2005-12-15

    X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface reactivity of polycrystalline Al films in contact with a gas mixture of carbon dioxide and oxygen at room temperature. Based on the characterization of interactions between these substrates and the individual gases at selected exposures, various surface functionalities were identified. Simultaneously dosing both carbon dioxide and oxygen is shown to create surface-terminating carbonate species, which contribute to inhibiting the formation of an Al{sub 2}O{sub 3} layer. Finally, a reaction scheme is suggested to account for the observed dependence of surface group formation on the dosing conditions.

  17. Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

    International Nuclear Information System (INIS)

    Venugopal, V.; Seijbel, L.J.; Thijsse, B.J.

    2005-01-01

    Thermal helium desorption spectrometry (THDS) has been used for the investigation of defects and thermal stability of thin Cu films (5-200 A ) deposited on a polycrystalline Mo substrate in ultrahigh vacuum. These films are metastable at room temperature. On heating, the films transform into islands, giving rise to a relatively broad peak in the helium desorption spectra. The temperature of this island formation is dependent on film thickness, being 417 K for 10 A and 1100 K for a 200 A film. The activation energy for island formation was found to be 0.3±0.1 eV for 75 A film. Grain boundaries have a strong effect on island formation. The defect concentration in the as-deposited films is ∼5x10 -4 , for films thicker than 50 A and more for thinner films. Helium release from monovacancies was identified in the case of a 200 A film. Helium release was also seen during sublimation of the Cu film (∼1350 K). Overlayer experiments were used to identify helium trapped close to the film surface. An increase of the substrate temperature during deposition resulted in a film that had already formed islands. Argon-ion assistance (250 eV) during film deposition with an ion/atom ratio of ∼0.1 resulted in a significant enhancement of helium trapping in the films. The argon concentration in the films was found to be 10 -3 . The temperature of island formation was increased due to argon-ion assistance. The helium and argon desorption spectra are found to be similar, which is due to most of the helium becoming trapped in the defects created by the argon beam. The role of the Mo surface in affecting the defects at the film-substrate interface is investigated. The effect of variation of helium fluence and helium implantation energy is also considered. The present THDS results of Cu/poly-Mo are compared to those of Cu/Mo(100) and Cu/Mo(100) reported earlier

  18. Polycrystalline magnetic garnet films comprising weakly coupled crystallites for piezoelectrically-driven magneto-optic spatial light modulators

    Energy Technology Data Exchange (ETDEWEB)

    Mito, S.; Sakurai, H.; Takagi, H.; Inoue, M. [Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Baryshev, A. V. [Electronics-Inspired Interdisciplinary Research Institute Toyohashi, Aichi 441-8580 (Japan); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation)

    2012-04-01

    We have investigated the magnetization process of the polycrystalline magnetic garnet films in order to determine the most suitable composition of garnet films for piezoelectrically-driven magneto-optic spatial light modulators (MOSLMs). For experiment, the bismuth-dysprosium-aluminum-substituted yttrium iron (Bi{sub 1.3}Dy{sub 0.7}Y{sub 1.0}Fe{sub 3.1}Al{sub 1.9}O{sub 12}) garnet films were deposited by an RF magnetron sputter and annealed at 700 deg. C in air. The annealing time was varied in a range of several minutes to control the grain size. The saturation magnetization, the remanent magnetization and the composition of the fabricated garnet films slightly changed versus the annealing time. Experiments showed that the coercivity and the grain size increased at longer annealing; the coercivity was larger for films with bigger grains. This work shows that garnet films with smaller coercivity are most suitable for controlling the magnetization of garnet and, correspondingly, the magneto-optical rotation of MOSLM pixels driven by piezoelectrics.

  19. Non-classical polycrystalline silicon thin-film transistor with embedded block-oxide for suppressing the short channel effect

    International Nuclear Information System (INIS)

    Lin, Jyi-Tsong; Huang, Kuo-Dong; Hu, Shu-Fen

    2008-01-01

    In this paper, a polycrystalline silicon (polysilicon) thin-film transistor with a block oxide enclosing body, BTFT, is fabricated and investigated. By utilizing the block-oxide structure of thin-film transistors, the BTFT is shown to suppress the short channel effect. This proposed structure is formed by burying self-aligned oxide spacers along the sidewalls of the source and drain junctions, which reduces the P–N junction area, thereby reducing the junction capacitance and leakage current. Measurements demonstrate that the BTFT eliminates the punch-through effect even down to gate lengths of 1.5 µm, whereas the conventional TFT suffers serious short channel effects at this gate length

  20. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS 2) thin films by MOCVD

    Science.gov (United States)

    Höpfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H.

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ / mol over the temperature range from 250 to 400°C. From 500 to 630°C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe 1 - xS) occurs at higher growth temperatures. The {S}/{Fe} ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 Å / s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 Å / s. Temperatures above 550°C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 μm.

  1. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS{sub 2}) thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Hoepfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H. [Hahn-Meitner-Institut Berlin, Abteilung Solare Energetik, Berlin (Germany)

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ/mol over the temperature range from 250 to 400C. From 500 to 630C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe{sub 1-x}S) occurs at higher growth temperatures. The S/Fe ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 A/s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 A/s. Temperatures above 550C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 {mu}m

  2. Effect of substrate temperature on ac conduction properties of amorphous and polycrystalline GaSe thin films

    International Nuclear Information System (INIS)

    Thamilselvan, M.; PremNazeer, K.; Mangalaraj, D.; Narayandass, Sa.K.; Yi, Junsin

    2004-01-01

    X-ray diffraction analysis of GaSe thin films used in the present investigation showed that the as-deposited and the one deposited at higher substrate temperature are in amorphous and polycrystalline state, respectively. The alternating current (ac) conduction properties of thermally evaporated films of GaSe were studied ex situ employing symmetric aluminium ohmic electrodes in the frequency range of 120-10 5 Hz at various temperature regimes. For the film deposited at elevated substrate temperature (573 K) the ac conductivity was found to increase with improvement of its crystalline structure. The ac conductivity (σ ac ) is found to be proportional to (ω s ) where s m calculated from ac conductivity measurements are compared with optical studies of our previous reported work for a-GaSe and poly-GaSe thin films. The distance between the localized centres (R), activation energy (ΔE σ ) and the number of sites per unit energy per unit volume N(E F ) at the Fermi level were evaluated for both a-GaSe and poly-GaSe thin films. Goswami and Goswami model has been invoked to explain the dependence of capacitance on frequency and temperature

  3. Characteristics of Schottky-barrier source/drain metal-oxide-polycrystalline thin-film transistors on glass substrates

    International Nuclear Information System (INIS)

    Jung, Seung-Min; Cho, Won-Ju; Jung, Jong-Wan

    2012-01-01

    Polycrystalline-silicon (poly-Si) Schottky-barrier thin-film transistors (SB-TFTs) with Pt-silicided source /drain junctions were fabricated on glass substrates, and the electrical characteristics were examined. The amorphous silicon films on glass substrates were converted into high-quality poly-Si by using excimer laser annealing (ELA) and solid phase crystallization (SPC) methods. The crystallinity of poly-Si was analyzed by using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction analysis. The silicidation process was optimized by measuring the electrical characteristics of the Pt-silicided Schottky diodes. The performances of Pt-silicided SB-TFTs using poly-Si films on glass substrates and crystallized by using ELA and SPC were demonstrated. The SB-TFTs using the ELA poly-Si film demonstrated better electrical performances such as higher mobility (22.4 cm 2 /Vs) and on/off current ratio (3 x 10 6 ) and lower subthreshold swing value (120 mV/dec) than the SPC poly-Si films.

  4. Transparent conducting properties of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} polycrystalline films on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hitosugi, T. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: hitosugi@chem.s.u-tokyo.ac.jp; Ueda, A. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Nakao, S.; Yamada, N.; Furubayashi, Y.; Hirose, Y.; Konuma, S. [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T.; Hasegawa, T. [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2008-07-01

    We report on transparent conducting properties of anatase Ti{sub 0.94}Nb{sub 0.06}O{sub 2} (TNO) polycrystalline films on glass substrate, and discuss the role of grain crystallinity and grain boundary on resistivity. Thin films of TNO were deposited using pulsed laser deposition at substrate temperature ranging from room temperature to 350 deg. C, with subsequent H{sub 2}-annealing at 500 deg. C. Polycrystalline TNO films showed resistivity of 4.5 x 10{sup -4} {omega} cm and 1.5 x 10{sup -3} {omega} cm for films prepared at substrate temperature of room temperature and 250 deg. C, respectively. X-ray diffraction measurements and transmission electron microscopy reveal that grain crystallinity and grain boundary play key roles in conductive films.

  5. Annealing of polycrystalline thin film silicon solar cells in water vapour at sub-atmospheric pressures

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Píč, Vlastimil; Benda, V.; Fejfar, Antonín

    2014-01-01

    Roč. 54, č. 5 (2014), s. 341-347 ISSN 1210-2709 R&D Projects: GA MŠk 7E10061 EU Projects: European Commission(XE) 240826 - PolySiMode Grant - others:AVČR(CZ) M100101216 Institutional support: RVO:68378271 Keywords : passivation * water vapour * thin film solar cell * polycrystalline silicon (poly-Si) * multicrys- talline silicon (m-Si) * Suns-VOC Subject RIV: JE - Non-nuclear Energetics, Energy Consumption ; Use

  6. Structural, electrical, and optical properties of polycrystalline NbO_2 thin films grown on glass substrates by solid phase crystallization

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Kamisaka, Hideyuki; Hirose, Yasushi; Hasegawa, Tetsuya

    2017-01-01

    We investigated the structural, electrical, and optical properties of polycrystalline NbO_2 thin films on glass substrates. The NbO_2 films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P_O_2). The electrical and optical properties of the precursor films systematically changed with P_O_2, demonstrating that the oxygen content of the precursor films can be finely controlled with P_O_2. The precursors were crystallized into polycrystalline NbO_2 films by annealing under vacuum at 600 C. The NbO_2 films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10"2 Ω cm, which is much lower than the bulk value of 1 x 10"4 Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO_2 crystal. Both oxygen-rich and -poor NbO_2 films showed lower ρ than that of the stoichiometric film. The NbO_2 film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films grown on glass substrates by solid phase crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Kamisaka, Hideyuki [Department of Chemistry, The University of Tokyo (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), Kawasaki (Japan); Department of Chemistry, The University of Tokyo (Japan)

    2017-03-15

    We investigated the structural, electrical, and optical properties of polycrystalline NbO{sub 2} thin films on glass substrates. The NbO{sub 2} films were crystallized from amorphous precursor films grown by pulsed laser deposition at various oxygen partial pressures (P{sub O2}). The electrical and optical properties of the precursor films systematically changed with P{sub O2}, demonstrating that the oxygen content of the precursor films can be finely controlled with P{sub O2}. The precursors were crystallized into polycrystalline NbO{sub 2} films by annealing under vacuum at 600 C. The NbO{sub 2} films possessed extremely flat surfaces with branching patterns. Even optimized films showed a low resistivity (ρ) of 2 x 10{sup 2} Ω cm, which is much lower than the bulk value of 1 x 10{sup 4} Ω cm, probably because of the inferior crystallinity of the films compared with that of a bulk NbO{sub 2} crystal. Both oxygen-rich and -poor NbO{sub 2} films showed lower ρ than that of the stoichiometric film. The NbO{sub 2} film with the highest ρ showed an indirect bandgap of 0.7 eV. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

    Science.gov (United States)

    Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

    2015-12-01

    The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

  9. Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films

    Science.gov (United States)

    Tang, C. J.; Fernandes, A. J. S.; Girão, A. V.; Pereira, S.; Shi, Fa-Nian; Soares, M. R.; Costa, F.; Neves, A. J.; Pinto, J. L.

    2014-03-01

    In this work, we study the growth habit of nanocrystalline diamond (NCD) films by exploring the very high power regime, up to 4 kW, in a 5 kW microwave plasma chemical vapour deposition (MPCVD) reactor, through addition of a small amount of nitrogen and oxygen (0.24%) into 4% CH4 in H2 plasma. The coupled effect of high microwave power and substrate temperature on NCD growth behaviour is systematically investigated by varying only power, while fixing the remaining operating parameters. When the power increases from 2 kW to 4 kW, resulting also in rise of the Si substrate temperature higher than 150 °C, the diamond films obtained maintain the NCD habit, while the growth rate increases significantly. The highest growth rate of 4.6 μm/h is achieved for the film grown at 4 kW, which represents a growth rate enhancement of about 15 times compared with that obtained when using 2 kW power. Possible factors responsible for such remarkable growth rate enhancement of the NCD films are discussed. The evolution of NCD growth characteristics such as morphology, microstructure and texture is studied by growing thick films and comparing it with that of large grain polycrystalline (PCD) films. One important characteristic of the NCD films obtained, in contrast to PCD films, is that irrespective of deposition time (i.e. film thickness), their grain size and surface roughness remain in the nanometer range throughout the growth. Finally, based on our present and previous experimental results, a potential parameter window is established for fast growth of NCD films under high power conditions.

  10. Linear Electrooptic Effect In Sputtered Polycrystalline LiNbO3 Films

    Science.gov (United States)

    Griffel, G.; Ruschin, Shlomo; Croitoru, Nathan I.

    1989-02-01

    Light guiding and modulation was demonstrated in sputtered LiNbO3 films deposited on glass substrates. The films exhibit exceptionally low attenuation (< 2dB/cm) and the highest electrooptical coefficient reported so far for this kind of films (1.34 x 10-12 m/V).

  11. Linear electro-optic effect in sputtered polycrystalline LiNbO3 films

    Science.gov (United States)

    Griffel, G.; Ruschin, S.; Croitoru, N.

    1989-04-01

    Light guiding and modulation was demonstrated in sputtered LiNbO3 films deposited on glass substrates. We report on films' exceptionally low attenuation (<2 dB/cm) and the highest electro-optical coefficient reported so far for this kind of film (1.34×10-12 m/V).

  12. Positron lifetime spectroscopy of internally oxidised Ag-In alloys

    International Nuclear Information System (INIS)

    Wegner, D.; Lieb, K.P.

    1989-01-01

    The effects of In 2 O 3 precipitates on positron lifetimes after internal oxidation of α-Ag-In alloys have been investigated. A positron trap associated with the lifetime τ 205(3) ps was detected. On the basis of the experimental results obtained for different oxidation kinetics parameters, a trapping model is proposed according to which positrons thermalised in a dislocation field around oxide precipitates are trapped at the oxide/metal phase boundary. The transition from internal to external oxidation of Ag-In was also studied. The positron lifetime in In 2 O 3 was measured to be τ = 263(8) ps. (author)

  13. Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

    International Nuclear Information System (INIS)

    Sehgal, Amit; Mangla, Tina; Gupta, Mridula; Gupta, R.S.

    2008-01-01

    In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model

  14. Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

    International Nuclear Information System (INIS)

    Fritsche, J.

    2003-01-01

    In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

  15. Size effects of polycrystalline lanthanum modified Bi4Ti3O12 thin films

    International Nuclear Information System (INIS)

    Simoes, A.Z.; Riccardi, C.S.; Cavalcante, L.S.; Gonzalez, A.H.M.; Longo, E.; Varela, J.A.

    2008-01-01

    The film thickness dependence on the ferroelectric properties of lanthanum modified bismuth titanate Bi 3.25 La 0.75 Ti 3 O 12 was investigated. Films with thicknesses ranging from 230 to 404 nm were grown on platinum-coated silicon substrates by the polymeric precursor method. The internal strain is strongly influenced by the film thickness. The morphology of the film changes as the number of layers increases indicating a thickness dependent grain size. The leakage current, remanent polarization and drive voltage were also affected by the film thickness

  16. Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

    Czech Academy of Sciences Publication Activity Database

    Ashcheulov, Petr; Šebera, Jakub; Kovalenko, Alexander; Petrák, Václav; Fendrych, František; Nesládek, M.; Taylor, Andrew; Vlčková Živcová, Zuzana; Frank, Otakar; Kavan, Ladislav; Dračínský, Martin; Hubík, Pavel; Vacík, Jiří; Kraus, I.; Kratochvílová, Irena

    2013-01-01

    Roč. 86, č. 10 (2013), , "443-1"-"443-9" ISSN 1434-6028 R&D Projects: GA TA ČR TA01011165; GA ČR(CZ) GAP304/10/1951; GA MŠk(XE) LM2011019; GA ČR GA13-31783S; GA MŠk(CZ) LD11076 EU Projects: European Commission(XE) 238201 - MATCON Institutional support: RVO:68378271 ; RVO:61388955 ; RVO:61388963 ; RVO:61389005 Keywords : polycrystalline diamond layer * conductivity B doping Subject RIV: BM - Solid Matter Physics ; Magnetism; CG - Electrochemistry (UFCH-W) Impact factor: 1.463, year: 2013

  17. Low-temperature transport properties of chemical solution deposited polycrystalline La0.7Sr0.3MnO3 ferromagnetic films under a magnetic field

    International Nuclear Information System (INIS)

    Zhu, Junyu; Chen, Ying; Xu, Wenfei; Yang, Jing; Bai, Wei; Wang, Genshui; Duan, Chungang; Tang, Zheng; Tang, Xiaodong

    2011-01-01

    Polycrystalline La 0.7 Sr 0.3 MnO 3 (LSMO) films were prepared on SiO 2 /Si (001) substrates by chemical solution deposition technique. Electrical and magnetic properties of LSMO were investigated. A minimum phenomenon in resistivity is found at the low temperature ( 0.7 Sr 0.3 MnO 3 films were grown by a modified chemical solution deposition route. → High quality LSMO thin films were prepared directly onto SiO 2 /Si substrates. → Abnormality in resistivity of LSMO films at low temperatures was studied in detail. → The abnormality was mainly attributed to Kondo-like spin dependent scattering.

  18. Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2016-01-01

    We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO 2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H 2 -annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers. (paper)

  19. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    Science.gov (United States)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  20. Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

    2009-03-15

    In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

  1. Intermixing, band alignment and charge transport in AgIn5S8/CuI heterojunctions

    International Nuclear Information System (INIS)

    Konovalov, I.; Makhova, L.; Hesse, R.; Szargan, R.

    2005-01-01

    Possibilities of creating photovoltaic devices using CuI/AgIn 5 S 8 heterojunctions are considered. Among other properties, preferential formation of polar (111) surfaces makes n-type AgIn 5 S 8 an attractive candidate for absorber layers of top cells in 4-terminal tandem structures. Cu-Ag exchange at the interface with p-type CuI was observed. This intermixing results in an additional component of Ag 3d5 photoelectron line after deposition of CuI, in the Cu (but not I) contamination of the surface after a chemical removal of CuI, and in a photoelectric sensitivity of the junction at energies below the band gaps. Valence band offsets of 0.4 and 0.5 eV (cliff) were found at interfaces with thin film and bulk AgIn 5 S 8 , supporting a conduction mechanism through interface recombination. Pinning conflict at the interface between materials with contradictory doping limitations is likely to promote the intermixing

  2. Nanomechanical study of amorphous and polycrystalline ALD HfO2 thin films

    Science.gov (United States)

    K. Tapily; J.E. Jakes; D. Gu; H. Baumgart; A.A. Elmustafa

    2011-01-01

    Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO

  3. Thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth (GREG) technique using photoacoustic methods

    International Nuclear Information System (INIS)

    Albor-Aguilera, M.L.; Gonzalez-Trujillo, M.A.; Cruz-Orea, A.; Tufino-Velazquez, M.

    2009-01-01

    In this work we report the study of the thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth technique. CdS films were grown on pyrex glass substrates. These studies were carried out using an open photoacoustic cell made out of an electret microphone. From X-ray diffraction, atomic force microscope and photoluminescence measurements we observed polycrystalline CdS films with good morphology and crystalline quality. We obtained a thermal diffusivity coefficient of our samples with values ranging from 3.15 to 3.89 x 10 -2 cm 2 /s. For comparison, we measured a value of 1.0 x 10 -2 cm 2 /s for the thermal diffusivity coefficient of a CdS single crystal. We measured an energy gap value of 2.42 eV for our samples by using a photoacoustic spectroscopy system

  4. Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

    International Nuclear Information System (INIS)

    Son, Phil Kook; Kim, Tae Hyung; Choi, Suk Won; Gwag, Jin Seog

    2012-01-01

    The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indium tinoxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 .deg. C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

  5. Poly-crystallinity of indium-tin-oxide films improved by using simultaneous ion beam and heat treatment of the plastic substrate

    Science.gov (United States)

    Son, Phil Kook; Kim, Taehyung; Choi, Suk-Won; Gwag, Jin Seog

    2012-08-01

    The combined treatment effects of an ion beam with directionality and heat of a low temperature on a plastic substrate was investigated as a method to increase the electrical conductivity of indiumtin-oxide (ITO) films deposited on plastic substrate surfaces at low temperatures. Polyethylene terephthalate (PET) surface treatment by using an ion beam at low temperature (120 °C), which can be applied to plastic substrates, improves the conductivity of ITO films. X-ray diffraction indicates that ITO films deposited on PET surfaces treated simultaneously by using an ion beam and heat of a low temperature have an almost polycrystalline structure even though they have small amorphous party on. As a supplementary measurement, the contact angle showed that the polycrystalline structure was due to a self-assembly effect at the PET surfaces. Consequently, the electrical conductivity of an ITO film deposited by using the proposed technique is three times higher than that of an ITO film treated only with heat of low temperature due to the improved polycrystalline structure.

  6. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se2 semiconductors for thin film solar cells

    International Nuclear Information System (INIS)

    Baier, Robert

    2012-01-01

    Solar cells based on polycrystalline Cu(In,Ga)Se 2 (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10 11 cm -2 and ∼2.1 x 10 12 cm -2 were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the first time on CIGSe thin

  7. Electronic grain boundary properties in polycrystalline Cu(In,Ga)Se{sub 2} semiconductors for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Baier, Robert

    2012-06-25

    Solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGSe) thin film absorbers reach the highest energy conversion efficiency among all thin film solar cells. The record efficiency is at least partly attributed to benign electronic properties of grain boundaries (GBs) in the CIGSe layers. However, despite a high amount of research on this phenomenon the underlying physics is not sufficiently understood. This thesis presents an elaborate study on the electronic properties of GBs in CIGSe thin films. Kelvin probe force microscopy (KPFM) was employed to investigate the electronic properties of GBs in dependence of the Ga-content. Five CIGSe thin lms with various Ga-contents were grown by means of similar three stage co-evaporation processes. Both as grown as well as chemically treated (KCN etched) thin films were analyzed. The chemical treatment was employed to remove surface oxides. No difference in electronic GB properties was found with or without the chemical treatment. Therefore, we conclude that a moderate surface oxidation does not alter the electronic properties of GBs. In general, one can observe significant variations of electronic potential barriers at GBs. Under consideration of the averaging effect of the work function signal of nanoscale potential distributions in KPFM measurements which was quantified in the course of this thesis both positive and negative potential barriers in a range between ∼-350 mV and ∼+450 mV were detected. Additionally, variations in the defect densities at GBs between ∼3.1 x 10{sup 11} cm{sup -2} and ∼2.1 x 10{sup 12} cm{sup -2} were found. However, no correlation between the electronic properties of GBs and the Ga-content of CIGSe thin films was discovered. Consequently, one cannot explain the drop in device efficiency observed for CIGSe thin film solar cells with a high Ga-content by a change of the electronic properties of GBs. Combined KPFM and electron backscatter diffraction measurements were employed for the

  8. Far-infrared reflection-absorption spectroscopy of amorphous and polycrystalline gallium arsenide films

    International Nuclear Information System (INIS)

    Gregory, J.R.

    1992-01-01

    We have reported far-infrared reflection absorption spectra (30-320CM -1 ) at 30 and 310K for nine films of non-stoichiometric GaAs. The FIRRAS measurements were performed using the grazing incidence FIR double-modulation spectroscopy technique first described by DaCosta and Coleman. The films were fabricated by molecular beam deposition on metallized substrates for two As/Ga molecular beam flux ratios. The films were characterized by depth profilometry, IRAS, XRD, and x-ray microprobe analysis. Film thicknesses ranged from 800 to 5800 angstrom and compositions were 45-50% As for a MB flux ratio of 0.29 and 60-70% As for a ratio of 1.12. FIRRAS measurements were made and characterizations performed for as-deposited films and for 5 hour anneals at 473, 573, 673 and 723 degrees C. Vibrational spectra of the crystallized films were interpreted in terms of the exact reflectivity of a thin dielectric film on a conducting substrate, using a classical Lorentzian dielectric function for the response of the film. Resonances appearing in the open-quote forbidden close-quote region between the TO and LO frequencies were modelled with an effective medium approximation and are interpreted as arising from small-scale surface roughness. The behavior of the amorphous film spectra were examined within two models. The effective force constant model describes the variation of the reflection-absorption maxima with measured crystallite size in terms of the effective vibration frequency of 1-D atomic chains having force constants distributed according to the parameters of the crystalline-to-amorphous relaxation length and the crystalline to amorphous force constant ratio. The dielectric function continuum model uses the relaxation of the crystal momentum selection rule to calculate the reflection-absorption spectrum based on a dielectric function in which the oscillator strength is the normalized product of a constant dipole strength and the smoothed vibrational density of states

  9. Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

    International Nuclear Information System (INIS)

    Kabyshev, A V; Konusov, F V; Remnev, G E; Pavlov, S K

    2014-01-01

    Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10 −2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed

  10. Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

    International Nuclear Information System (INIS)

    Tsao, Chao-Yang; Weber, Juergen W.; Campbell, Patrick; Widenborg, Per I.; Song, Dengyuan; Green, Martin A.

    2009-01-01

    Poly-crystalline germanium (poly-Ge) thin films have potential for lowering the manufacturing cost of photovoltaic devices especially in tandem solar cells, but high crystalline quality would be required. This work investigates the crystallinity of sputtered Ge thin films on glass prepared by in situ growth and ex situ solid-phase crystallization (SPC). Structural properties of the films were characterized by Raman, X-ray diffraction and ultraviolet-visible reflectance measurements. The results show the transition temperature from amorphous to polycrystalline is between 255 deg. C and 280 deg. C for in situ grown poly-Ge films, whereas the transition temperature is between 400 deg. C and 500 deg. C for films produced by SPC for a 20 h annealing time. The in situ growth in situ crystallized poly-Ge films at 450 deg. C exhibit significantly better crystalline quality than those formed by solid-phase crystallization at 600 deg. C. High crystalline quality at low substrate temperature obtained in this work suggests the poly-Ge films could be promising for use in thin film solar cells on glass.

  11. Influence of the microstructure on the resulting 18R martensitic transformation of polycrystalline Cu−Al−Zn thin films obtained by sputtering and reactive annealing

    International Nuclear Information System (INIS)

    Domenichini, P.; Condó, A.M.; Soldera, F.; Sirena, M.; Haberkorn, N.

    2016-01-01

    We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu−Zn−Al thin films with 18R structure. The films are grown in two steps. First, Cu−Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu−Al thin films by the annealing them together with a bulk Cu−Zn−Al reference. The crystalline structure of the films was analyzed by X-ray diffraction and transmission electron microscopy. The martensitic transformation temperature was measured by electrical transport using conventional four probe geometry. It was observed that temperatures above 973 K are necessary for zincification of the samples to occur. The resulting martensitic transformation and its hysteresis (barrier for the transformation) depend on the grain size, topology and films thickness. - Highlights: • Polycrystalline Cu−Al−Zn thin films with nanometric grain size are sintered. • Influence of thermal annealing process on the microstructure is analyzed. • Martensitic transformation of Cu−Al−Zn thin films is strongly affected by the microstructure.

  12. Influence of the microstructure on the resulting 18R martensitic transformation of polycrystalline Cu−Al−Zn thin films obtained by sputtering and reactive annealing

    Energy Technology Data Exchange (ETDEWEB)

    Domenichini, P. [Instituto Balseiro, Bustillo 9500, S. C. de Bariloche (Argentina); Condó, A.M. [Instituto Balseiro, Bustillo 9500, S. C. de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Soldera, F. [Department of Materials Science & Engineering, Saarland University, D-66123 Saarbruecken (Germany); Sirena, M. [Instituto Balseiro, Bustillo 9500, S. C. de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Haberkorn, N., E-mail: nhaberk@cab.cnea.gov.ar [Instituto Balseiro, Bustillo 9500, S. C. de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina)

    2016-04-15

    We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu−Zn−Al thin films with 18R structure. The films are grown in two steps. First, Cu−Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu−Al thin films by the annealing them together with a bulk Cu−Zn−Al reference. The crystalline structure of the films was analyzed by X-ray diffraction and transmission electron microscopy. The martensitic transformation temperature was measured by electrical transport using conventional four probe geometry. It was observed that temperatures above 973 K are necessary for zincification of the samples to occur. The resulting martensitic transformation and its hysteresis (barrier for the transformation) depend on the grain size, topology and films thickness. - Highlights: • Polycrystalline Cu−Al−Zn thin films with nanometric grain size are sintered. • Influence of thermal annealing process on the microstructure is analyzed. • Martensitic transformation of Cu−Al−Zn thin films is strongly affected by the microstructure.

  13. Fabrication of highly conductive Ta-doped SnO2 polycrystalline films on glass using seed-layer technique by pulse laser deposition

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Yamada, Naoomi; Hitosugi, Taro; Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya

    2010-01-01

    We discuss the fabrication of highly conductive Ta-doped SnO 2 (Sn 1-x Ta x O 2 ; TTO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity (ρ) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO 2 and NbO 2 as seed-layers; these are isostructural materials of SnO 2, which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x = 0.05 on rutile TiO 2 exhibited ρ = 3.5 x 10 -4 Ω cm, which is similar to those of the epitaxial films grown on Al 2 O 3 (0001).

  14. Fabrication of highly conductive Ta-doped SnO{sub 2} polycrystalline films on glass using seed-layer technique by pulse laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nakao, Shoichiro, E-mail: tg-s-nakao@newkast.or.j [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Yamada, Naoomi [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, Taro [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Hirose, Yasushi; Shimada, Toshihiro; Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan)

    2010-03-31

    We discuss the fabrication of highly conductive Ta-doped SnO{sub 2} (Sn{sub 1-x}Ta{sub x}O{sub 2}; TTO) thin films on glass by pulse laser deposition. On the basis of the comparison of X-ray diffraction patterns and resistivity ({rho}) values between epitaxial films and polycrystalline films deposited on bare glass, we proposed the use of seed-layers for improving the conductivity of the TTO polycrystalline films. We investigated the use of rutile TiO{sub 2} and NbO{sub 2} as seed-layers; these are isostructural materials of SnO{sub 2,} which are expected to promote epitaxial-like growth of the TTO films. The films prepared on the 10-nm-thick seed-layers exhibited preferential growth of the TTO (110) plane. The TTO film with x = 0.05 on rutile TiO{sub 2} exhibited {rho} = 3.5 x 10{sup -4} {Omega} cm, which is similar to those of the epitaxial films grown on Al{sub 2}O{sub 3} (0001).

  15. Influence of oxygen treatment on transport properties of PbTe:In polycrystalline films

    International Nuclear Information System (INIS)

    Dashevsky, Z.; Shufer, E.; Kasiyan, V.; Flitsiyan, E.; Chernyak, L.

    2010-01-01

    In this work, the oxygen treatment of 1 μm thick n-type PbTe:In films was studied. Two main processes induced during the thermal treatment in oxygen atmosphere were identified. The inversion of the type of electrical conductivity in PbTe:In films from n- to p-type was observed after the thermal treatment in oxygen (T a =400 deg. C). This effect is related to indium segregation at the film surface. The photoconductivity demonstrated in PbTe:In films after oxygen treatment is due to oxygen diffusion along the grain boundaries and the creation of potential relief, which separates electron-hole pairs at the boundaries under light illumination.

  16. Artificial in-plane ordering of textured YBa2Cu3O(7-x) films deposited on polycrystalline yttria-stabilized zirconia substrates

    Science.gov (United States)

    Harshavardhan, K. S.; Rajeswari, M.; Hwang, D. M.; Chen, C. Y.; Sands, T. D.; Venkatesan, T.; Tkaczyk, J. E.; Lay, K. W.; Safari, A.; Johnson, L.

    1992-12-01

    Anisotropic surface texturing of the polycrystalline yttria-stabilized zirconia substrates, prior to YBa2Cu3O(7-x) film deposition, is shown to promote in-plane (basal plane) ordering of the film growth in addition to the c-axis texturing. The Jc's of the films in the weak-link-dominated low-field regime are enhanced considerably, and this result is attributed to the reduction of weak links resulting from a reduction in the number of in-plane large-angle grain boundaries.

  17. Superficial oxidation in mono and polycrystalline niobium films for Josephson joints

    International Nuclear Information System (INIS)

    Celaschi, S.; Geballi, T.H.

    1984-01-01

    Niobium thin films (Nb) with multigranular and monocrystalline structure with 3000 A of thickness was put in different temperatures on sapphire monocrystalline substrate by high vaccum evaporation technique (10 -8 Torr). The evaporation process and some of structural properties of the films are described. The oxidation process is studied through the characteristics of the current curves x voltage measured in low temperature (4.2 K). (E.G.) [pt

  18. Raman spectroscopy study of the influence of processing conditions on the structure of polycrystalline diamond films

    International Nuclear Information System (INIS)

    Ramamurti, R.; Shanov, V.; Singh, R.N.; Mamedov, S.; Boolchand, P.

    2006-01-01

    Diamond films are prepared by microwave plasma-enhanced chemical-vapor deposition on Si (100) substrates using the H 2 -Ar-CH 4 gases. Raman scattering data, including the peak position, intensity, area, and width, are analyzed in depth and used to obtain the sp 3 - and sp 2 -bonded carbon contents and the nature of internal stresses in the films. Polarization behavior of the Raman peaks is analyzed to assess its role on the quantitative analysis of the diamond films, which suggested that the 1150 cm -1 Raman peak in nanocrystalline diamond films could be attributed to sp 2 -bonded carbon. The role of the H 2 /Ar content in the gas mixture and substrate temperature on the characteristics of the diamond film is studied. Thickness and grain size of diamond films are also determined by scanning electron microscopy and related to the deposition conditions and Raman results. Deposition conditions, which led to highest sp 3 -bonded carbon content and growth rate, are identified

  19. Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

    2014-03-15

    In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

  20. Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

    International Nuclear Information System (INIS)

    Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

    2010-01-01

    Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

  1. Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

  2. Comparative investigation of smooth polycrystalline diamond films on dental burs by chemical vapor deposition

    Science.gov (United States)

    Sein, Htet; Ahmed, Waqar; Rego, Christopher; Jackson, Mark; Polini, Riccardo

    2006-04-01

    Depositions of hot filament chemical vapor-deposited diamond on cobalt-cemented tungsten carbide (WC-Co) rotary cutting dental burs are presented. Conventional dental tools made of sintered polycrystalline diamond have a number of problems associated with the heterogeneity of the crystallite, decreased cutting efficiency, and short life. A preferential (111) faceted diamond was obtained after 15 h of deposition at a growth rate of 1.1 µm/h. Diamond-coated WC-Co dental burs and conventional sintered burs are mainly used in turning, milling, and drilling operations for machining metal ceramic hard alloys such as CoCr, composite teeth, and aluminum alloy in the dental laboratory. The influence of structure, the mechanical characteristics of both diamond grains and hard alloys on the wear behavior, as well as the regimen of grinding on diamond wear are considered. Erosion wear properties are also investigated under air-sand erosion testing. After machining with excessive cutting performance, calculations can be made on flank and crater wear areas. Diamond-coated WC-Co dental burs offered significantly better erosion and wear resistance compared with uncoated WC-Co tools and sintered burs.

  3. Structural and optical properties of AgIn5S8

    Science.gov (United States)

    Rincón, Carlos A. Durante; Durán, Larissa T.; Medina, Josefa Estévez; Castro, Jaime A.; León, Máximo; Fermín, Jose R.

    2017-12-01

    Compounds of the chalcogenide family Ag-In-VI (VI = S, Se, Te) are interesting materials due to their stoichiometric stability and potential application in nonlinear optics and solar cells. A polycrystalline ingot of AgIn5S8, an ordered vacancy semiconductor, was prepared by direct fusion of the stoichiometric mixture of the elements in an evacuated quartz ampoule. The presence of a single phase with cubic structure was confirmed by X-ray powder diffraction at room temperature. The lattice parameter, a, was calculated, giving 10.821750 Å. Samples in evacuated quartz ampoules were used to perform Differential Thermal Analysis measurements, showing congruent melting at 1110∘C. Transmittance and reflectivity measurements were used to calculate the absorption coefficient α. From the plot of (αhν)2 versus hν, two direct transitions are observed at 1.25 eV and 1.88 eV. While the higher energy direct transition has been observed by other authors, the direct nature of the lower energy transition was confirmed from the fitting of the plot of the reflectivity versus 1/hν between 0.53 eV-1 (1.89 eV) and 0.55 eV-1 (1.82 eV), obtaining a value of 1.29 eV. The real refractive index n and the high-frequency dielectric constant 𝜀∞ were also obtained from the fit of the reflectivity, resulting to be 2.68 and 7.2, respectively.

  4. Influence of Nb content on the structural and optical properties of anatase TiO{sub 2} polycrystalline thin film by e-beam technique

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A., E-mail: attaullah77@yahoo.com; Mahmood, Arshad; Aziz, Uzma; Rashid, Rashad; Raza, Qaiser; Ali, Zahid

    2016-09-01

    In this paper, we report the structural and optical properties of Nb-doped TiO{sub 2} thin films deposited by e-beam evaporation technique. After post annealing in air at 500 °C for 1 h, the samples were characterized by various techniques such as X-ray diffraction (XRD), Raman spectroscopy, UV–Vis spectrophotometry and spectroscopic Ellipsometer. Both XRD and Raman analyses indicate that the films were crystallized into the polycrystalline anatase TiO{sub 2} structure. However it was observed that the crystallinity of the films decreases with the addition of Nb atoms and tends to become amorphous at 20% Nb content in TiO{sub 2} film. Moreover, no new phases such as Nb{sub 2}O{sub 5}, NbO{sub 2} or Nb metal were observed. The band gap energy was found to decrease with the increasing of Nb concentration which was verified by ellipsometric study. Ellipsomtric measurements also indicate that refractive index (n) of the films decreases while extinction coefficient (k) increases with the increasing of Nb content. All these analyses elucidate that the incorporation of Nb atom into TiO{sub 2} may tune the structural and optical properties of TiO{sub 2} thin films. - Highlights: • The addition of Nb into TiO{sub 2} film has strongly influenced its physical properties. • Anatase polycrystalline Nb:TiO{sub 2} films were grown up to 15% Nb content. • The film becomes an amorphous at 20% Nb doping. • Band gap energy of TiO{sub 2} film was decreased with increasing of Nb content in the film. • The Optical constants (n, k) of Nb:TiO{sub 2} film were varied as a function of Nb content.

  5. Optical properties of n-CdSe sub 1-x Te sub x polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M T [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

    1991-01-01

    Absorption coefficient, {alpha}({lambda}), and energy gap, E{sub g}, of CdSe{sub 1-x}Te{sub x} thin films were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 450-2500 nm. The thin film were electrochemically prepared on glass plates coated with conducting thin films of SnO{sub 2}. A combined method from Goodman and Lubberts was used to determine the absorption coefficient and its dependence on the wavelength. The evolution of the optical gap versus the composition of Te in CdSe{sub 1-x}Te{sub x} was made and a value of 1.4 eV of the optical gap was obtained for the composition of CdSe{sub 0.65}Te{sub 0.35}. (orig.).

  6. Progress in Polycrystalline Thin-Film Cu(In,GaSe2 Solar Cells

    Directory of Open Access Journals (Sweden)

    Udai P. Singh

    2010-01-01

    Full Text Available For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGaSe2 or Cu(InGa(Se,S2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.

  7. Fabrication of polycrystalline silicon thin films on glass substrates using fiber laser crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Dao, Vinh Ai; Han, Kuymin; Heo, Jongkyu; Kyeong, Dohyeon; Kim, Jaehong; Lee, Youngseok; Kim, Yongkuk; Jung, Sungwook; Kim, Kyunghae [Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.k [Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University (Korea, Republic of)

    2009-05-29

    Laser crystallization of amorphous silicon (a-Si), using a fiber laser of {lambda} = 1064 nm wavelength, was investigated. a-Si films with 50 nm thickness deposited on glass were prepared by a plasma enhanced chemical vapor deposition. The infrared fundamental wave ({lambda} = 1064 nm) is not absorbed by amorphous silicon (a-Si) films. Thus, different types of capping layers (a-CeO{sub x}, a-SiN{sub x}, and a-SiO{sub x}) with a desired refractive index, n and thickness, d were deposited on the a-Si surface. Crystallization was a function of laser energy density, and was performed using a fiber laser. The structural properties of the crystallized films were measured via Raman spectra, a scanning electron microscope (SEM), and an atomic force microscope (AFM). The relationship between film transmittance and crystallinity was discussed. As the laser energy density increased from 10-40 W, crystallinity increased from 0-90%. However, the higher laser density adversely affected surface roughness and uniformity of the grain size. We found that favorable crystallization and uniformity could be accomplished at the lower energy density of 30 W with a-SiO{sub x} as the capping layer.

  8. The local environment of cobalt in amorphous, polycrystalline and epitaxial anatase TiO{sub 2}:Co films produced by cobalt ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Yildirim, O. [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden (Germany); Technische Universität Dresden, D-01062 Dresden (Germany); Cornelius, S.; Hübner, R.; Potzger, K. [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden (Germany); Smekhova, A.; Zykov, G.; Gan' shina, E. A.; Granovsky, A. B. [Lomonosov Moscow State University (MSU), Faculty of Physics, 119991 Moscow (Russian Federation); Bähtz, C. [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstr. 400, 01328 Dresden (Germany); Rossendorf Beamline, European Synchrotron Radiation Facility, F-38043 Grenoble (France)

    2015-05-14

    Amorphous, polycrystalline anatase and epitaxial anatase TiO{sub 2} films have been implanted with 5 at. % Co{sup +}. The magnetic and structural properties of different microstructures of TiO{sub 2}:Co, along with the local coordination of the implanted Co atoms within the host lattice are investigated. In amorphous TiO{sub 2}:Co film, Co atoms are in the (II) oxidation state with a complex coordination and exhibit a paramagnetic response. However, for the TiO{sub 2}:Co epitaxial and polycrystalline anatase films, Co atoms have a distorted octahedral (II) oxygen coordination assigned to a substitutional environment with traces of metallic Co clusters, which gives a rise to a superparamagnetic behavior. Despite the incorporation of the implanted atoms into the host lattice, high temperature ferromagnetism is absent in the films. On the other hand, it is found that the concentration and size of the implantation-induced nanoclusters and the magnetic properties of TiO{sub 2}:Co films have a strong dependency on the initial microstructure of TiO{sub 2}. Consequently, metallic nanocluster formation within ion implantation prepared transition metal doped TiO{sub 2} can be suppressed by tuning the film microstructure.

  9. Effects of disorder on the microwave properties of MgB2 polycrystalline films

    International Nuclear Information System (INIS)

    Ghigo, G.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Mezzetti, E.; Ummarino, G. A.

    2006-01-01

    The role of disorder in superconducting magnesium diboride (MgB 2 ) policrystalline films is investigated in the high frequency range by a coplanar microwave resonator technique. Two sources of disorder are considered, heavy-ion irradiation damage and sample ageing. Microwave measurements are analyzed in the framework of the two-gap model with strong interband scattering contribution. It turns out that disorder enhancement increases the interband scattering rate, resulting in a reduction of the surface resistance at low temperatures, due to a slight increase of the π gap. Moreover, increasing disorder at grain boundaries induces a nonmonotonic residual surface resistance, showing the features of a resistive behavior for the highest disorder level. Finally, the effects of the different kinds of disorder on the intrinsic and on the grain-boundary properties of the MgB 2 films are compared and discussed

  10. N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

    Energy Technology Data Exchange (ETDEWEB)

    Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2008-08-30

    In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

  11. Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

    Science.gov (United States)

    Choi, Young-Hwan; Ryu, Han-Youl

    2018-04-01

    We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

  12. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  13. Passivation effect of water vapour on thin film polycrystalline Si solar cells

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Müller, Martin; Becker, C.; Fejfar, Antonín

    2016-01-01

    Roč. 213, č. 7 (2016), s. 1969-1975 ISSN 1862-6300 R&D Projects: GA MŠk LM2015087; GA ČR GA13-12386S Grant - others:AV ČR(CZ) DAAD-16-27 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

  14. Tunable fluorescence emission of ternary nonstoichiometric Ag-In-S alloyed nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Feng Jian, E-mail: dhjfeng@ciac.jl.cn; Yang Xiurong, E-mail: xryang@ciac.jl.cn [Chinese Academy of Sciences, State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry (China)

    2012-08-15

    Low toxic, nonstoichiometric colloidal Ag-In-S ternary quantum dots with different Ag content were synthesized by a one-pot hot-injection method based on the reaction of metal acetylacetonates with sulfur dissolved in octadecene. X-ray diffraction (XRD), transmission electron microscopy, and high-resolution transmission electron microscopy (HRTEM) were used to characterize the size, structure, and morphology of these samples. ICP-MS was employed to analyze the compositions of Ag-In-S nanocrystals. The optical properties were characterized by UV-Vis absorption, photoluminescence (PL) spectroscopy, and time-resolved photoluminescence. Varying the fraction of cationic and capping agents, the compositions of Ag-In-S nanocrystals were precisely controlled. XRD and HRTEM results indicate the compositional homogeneity of Ag-In-S. The emission spectra across the different compositions exhibiting a single bandgap feature further confirm the formation of Ag-In-S alloy NCs, rather than phase separated Ag{sub 2}S and In{sub 2}S{sub 3}. Composition-dependent tunable PL emissions have been observed. The relative PL quantum yield is up to 16 %, which exhibited substantially enhanced comparing with the stoichiometric AgInS{sub 2} semiconductor core QDs reported in previous literature. The PL decay curve of Ag-In-S has a biexponential characteristic, which indicates that the recombination of an electron and a hole is dominated by the surface defect and the recombination process associated with internal traps is reduced significantly. The large Stokes shift between the absorption peaks and their emissions should inhibit the reabsorption and Foerster energy transfer between Ag-In-S nanocrystals, which provides the alternative in the further applications where high-concentrations of nanocrystals are needed.

  15. Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques

    International Nuclear Information System (INIS)

    Benenson, R.E.; Feldman, L.C.; Bagley, B.G.

    1980-01-01

    Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1 H( 15 N,αγ) 12 C(4.43 MeV) reaction and RBS analysis. Relatively intense 15 N ++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO 2 -Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15 N beam, but relaxed back when the beam was removed. (orig.)

  16. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  17. Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

    Science.gov (United States)

    Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

    2006-10-01

    Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

  18. Electrochemical reactivity at graphitic micro-domains on polycrystalline boron doped diamond thin-films electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Mahe, E. [LI2C CNRS/UMR 7612, Laboratoire d' Electrochimie, Universite Pierre-et-Marie Curie - case courrier 51, 4, Place Jussieu, 75252 Paris Cedex 05 (France); Devilliers, D. [LI2C CNRS/UMR 7612, Laboratoire d' Electrochimie, Universite Pierre-et-Marie Curie - case courrier 51, 4, Place Jussieu, 75252 Paris Cedex 05 (France); Comninellis, Ch. [Unite de Genie Electrochimique, Institut de sciences des procedes chimiques et biologiques, Ecole Polytechnique Federale de Lausanne, 1015, Lausanne (Switzerland)

    2005-04-01

    This paper deals with the electrochemical reactivity of boron doped diamond (BDD) electrodes. A comparative study has been carried out to show the influence of the presence of graphitic micro-domains upon the surface of these films. Those graphitic domains are sometimes present on as-grown boron doped diamond electrodes. The effect of doping a pure Csp{sup 3} diamond electrode is established by highly oriented pyrolytic graphite (HOPG) abrasion onto the diamond surface. In order to establish the effect of doping on a pure Csp{sup 3} diamond electrode, the amount of graphitic domains was increased by means of HOPG crystals grafted onto the BDD surface. Indeed that method allows the enrichment of the Csp{sup 2} contribution of the electrode. The presence of graphitic domains can be correlatively associated with the presence of kinetically active redox sites. The electrochemical reactivity of boron doped diamond electrodes shows a distribution of kinetic constants on the whole surface of the electrode corresponding to different active sites. In this paper, we have studied by cyclic voltammetry and electrochemical impedance spectroscopy the kinetics parameters of the ferri/ferrocyanide redox couple in KCl electrolyte. A method is proposed to diagnose the presence of graphitic domains on diamond electrodes, and an electrochemical 'pulse cleaning' procedure is proposed to remove them.

  19. Electrochemical reactivity at graphitic micro-domains on polycrystalline boron doped diamond thin-films electrodes

    International Nuclear Information System (INIS)

    Mahe, E.; Devilliers, D.; Comninellis, Ch.

    2005-01-01

    This paper deals with the electrochemical reactivity of boron doped diamond (BDD) electrodes. A comparative study has been carried out to show the influence of the presence of graphitic micro-domains upon the surface of these films. Those graphitic domains are sometimes present on as-grown boron doped diamond electrodes. The effect of doping a pure Csp 3 diamond electrode is established by highly oriented pyrolytic graphite (HOPG) abrasion onto the diamond surface. In order to establish the effect of doping on a pure Csp 3 diamond electrode, the amount of graphitic domains was increased by means of HOPG crystals grafted onto the BDD surface. Indeed that method allows the enrichment of the Csp 2 contribution of the electrode. The presence of graphitic domains can be correlatively associated with the presence of kinetically active redox sites. The electrochemical reactivity of boron doped diamond electrodes shows a distribution of kinetic constants on the whole surface of the electrode corresponding to different active sites. In this paper, we have studied by cyclic voltammetry and electrochemical impedance spectroscopy the kinetics parameters of the ferri/ferrocyanide redox couple in KCl electrolyte. A method is proposed to diagnose the presence of graphitic domains on diamond electrodes, and an electrochemical 'pulse cleaning' procedure is proposed to remove them

  20. Influence of coil current modulation on polycrystalline diamond film deposition by irradiation of Ar/CH4/H2 inductively coupled thermal plasmas

    Science.gov (United States)

    Betsuin, Toshiki; Tanaka, Yasunori; Arai, T.; Uesugi, Y.; Ishijima, T.

    2018-03-01

    This paper describes the application of an Ar/CH4/H2 inductively coupled thermal plasma with and without coil current modulation to synthesise diamond films. Induction thermal plasma with coil current modulation is referred to as modulated induction thermal plasma (M-ITP), while that without modulation is referred to as non-modulated ITP (NM-ITP). First, spectroscopic observations of NM-ITP and M-ITP with different modulation waveforms were made to estimate the composition in flux from the thermal plasma by measuring the time evolution in the spectral intensity from the species. Secondly, we studied polycrystalline diamond film deposition tests on a Si substrate, and we studied monocrystalline diamond film growth tests using the irradiation of NM-ITP and M-ITP. From these tests, diamond nucleation effects by M-ITP were found. Finally, following the irradiation results, we attempted to use a time-series irradiation of M-ITP and NM-ITP for polycrystalline diamond film deposition on a Si substrate. The results indicated that numerous larger diamond particles were deposited with a high population density on the Si substrate by time-series irradiation.

  1. Application of polycrystalline diffusion barriers

    International Nuclear Information System (INIS)

    Tsymbal, V.A.; Kolupaev, I.N.

    2010-01-01

    Degradation of contacts of the electronic equipment at the raised temperatures is connected with active diffusion redistribution of components contact - metalized systems (CMS) and phase production on interphase borders. One of systems diffusion barriers (DB) are polycrystalline silicide a film, in particular silicides of the titan. Reception disilicide the titan (TiSi 2 ) which on the parameters is demanded for conditions of microelectronics from known silicides of system Ti-Si, is possible as a result of direct reaction of a film of the titan and a substrate of silicon, and at sedimentation of layer Ti-Si demanded stoichiometric structure. Simultaneously there is specific problem polycrystalline diffusion a barrier (PDB): the polycrystalline provides structural balance and metastability film disilicide, but leaves in it borders of grains - easy local ways of diffusion. In clause the analysis diffusion permeability polycrystalline and polyphase DB is made and recommendations for practical methods of increase of blocking properties PDB are made.

  2. Polycrystalline silicon film solar cells on insulator devices. Final report; Duennschichtsolarzellen aus kristallinem Silicium auf Glassubstraten. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Werner, J.H.; Wagner, T.A.; Bruehne, K.; Berge, C.; Dassow, R.; Jensen, N.; Koehler, J.; Nerding, M.; Oberbeck, L.; Rinke, T.J.; Bergmann, R.B.; Schubert, M.B.

    2002-07-01

    The goal of presenting a highly efficient thin film silicon solar cell was achieved by manufacturing a 4 cm{sup 2}, 45 {mu}m thin cell with an AM1.5 efficiency of 16.6% (confirmed by FhG-ISE, Freiburg, Germany). This result reflects the potential of a novel transfer technique for single-crystalline silicon thin films which uses an electrochemically etched separation layer. Since the year 2000, this method was investigated in this project, and it proved to be very promising for manufacturing high efficiency thin film silicon solar cells. The transfer technique is now subject of a project in continuation in order to verify the feasibility of its industrial application. Polycrystalline silicon with grain sizes in the range of (1-100) {mu}m suffers from grain boundaries crossing the pn-junction which enhance recombination, and thereby limit the output voltage of respective solar cells to very low, and practically useless values. For the first time, a complete analysis of these limitations is given. Hence, the initial approach of epitaxially growing solar cell absorbers on a laser-crystallised seed layer proved not successful. After proper optimisation, hot-wire chemical vapour deposition (HW-CVD) yields <110>-textured nanocrystalline silicon (nc-Si) films with stable and improved electronic properties. A successful use in stacked 'micromorph' solar cells, however, seems unlikely since the deposition rate of high-quality nc-Si from HW-CVD turns out to be as low as such as plasma deposited nc-Si. As further project results, there are spin-offs for microelectronics from ion-assisted deposition (IAD), for displays from laser crystallisation, and for photovoltaics in heterojunction solar cells. (orig.) [German] Das Projektziel wurde mit der Herstellung einer 45 {mu}m duennen, monokristallinen Siliciumsolarzelle auf Glas mit einem Wandlungswirkungsgrad von 16,6% (bestaetigt bei FhG-ISE, Freiburg) erreicht. Dieses Ergebnis war moeglich durch die Anwendung einer neu

  3. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

    2014-09-30

    Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

  4. MicroRaman scattering from polycrystalline CuInS{sub 2} films: structural analysis

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez-Garcia, J.; Marcos-Ruzafa, J.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. de Fisica Aplicada i Electronica; Scheer, R. [Hahn-Meitner-Institut Berlin GmbH (Germany)

    2000-02-21

    CuInS{sub 2} thin films co-evaporated with gradual chemical composition have been characterised by microRaman scattering measurements. For the Cu rich region, the mode A{sub 1} at about 290 cm{sup -1} corresponding to the chalcopyrite phase is dominant. For the Cu poor region, this mode is accompanied by a strong contribution at about 306 cm{sup -1}. Besides, the mode A{sub 1} is broadened and shifted towards higher frequencies, which suggests an inferior structural quality of the Cu poor region. Decreasing the temperature of deposition leads to a dramatic decrease of structural quality in both In and Cu rich regions. The correlation between the appearance of the 306 cm{sup -1} mode and the spectral features of the mode A{sub 1} suggest the higher frequency mode is not related to the excess In in the layer but to structural effects as lattice disorder. Combined in-depth Auger electron spectroscopy and Raman scattering measurements have also shown the presence of a more complex structure for the Cu poor region of the layers, which presents a significant CuIn{sub 5}S{sub 8} secondary phase contribution in the spectra from the central region of the layers. The correlation of this contribution with the spectral features of the CuInS{sub 2} modes suggests a direct relationship between the presence of this In rich secondary phase and disorder at the CuInS{sub 2} lattice. (orig.)

  5. Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a technology of low temperature deposition of polycrystalline thin films for solar cells. This research used ITO coated glass substrates, on which CdS was accumulated to a thickness of about 100 nm by using the CBD process, and over this deposition a CuInSe2 film was formed at 300{degree}C by using the ion cluster beam (ICB) process. The manufactured solar cells with a glass/ITO/CdS/CuInSe2/Au structure had an efficiency of 2%. In manufacturing a CuGaSe2 thin film by using the ICB process, effects of acceleration voltage relative to cluster beams and ionization current were investigated. It was found that the film morphology, the result of analysis by using X-ray diffraction, and the electric conductivity are sensitive to the ionization current. From these findings, an optimum film forming condition was derived. A CuGaSe2 thin film was manufactured by using the ICB process over a Cds thin film deposited by using the CDB process. Both of the surface morphology and X-ray diffraction patterns of the film did not show a large change, indicating a possibility of manufacturing cells with a reverse structure. Effects of heat treatment on CuInSe2 monocrystals were evaluated by using ESR and FTIR. 6 figs., 1 tab.

  6. Morphology and electronic transport of polycrystalline silicon films deposited by SiF sub 4 /H sub 2 at a substrate temperature of 200 deg. C

    CERN Document Server

    Hazra, S; Ray, S

    2002-01-01

    Undoped and phosphorous doped polycrystalline silicon (poly-Si) films were deposited using a SiF sub 4 /H sub 2 gas mixture at a substrate temperature of 200 deg. C by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). Fourier transform infrared (FTIR) spectroscopy and x-ray diffraction (XRD) experiments reveal that the present poly-Si films are equivalent to the poly-Si films deposited at high temperature (>600 deg. C). XRD and scanning electron microscope observations show that the crystalline quality of slightly P-doped film is better compared to that of undoped poly-Si films. Phosphorus atom concentration in the slightly P-doped poly-Si film is 5.0x10 sup 1 sup 6 atoms/cm sup 3. Association of a few phosphorous atoms in the silicon matrix enhances crystallization as eutectic-forming metals do. Dark conductivity of slightly P-doped film is 4 orders of magnitude higher, although mobility-lifetime product (eta mu tau) is 2 orders of magnitude lower than that of undoped film. The presence o...

  7. Analysis of mechanical properties of N2in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

    International Nuclear Information System (INIS)

    Kim, Kang-San; Han, Ki-Bong; Chung, Gwiy-Sang

    2010-01-01

    This paper describes the mechanical properties of poly (polycrystalline) 3C-SiC thin films with N 2 in situ doping. In this work, in situ doped poly 3C-SiC film was deposited by using the atmospheric pressure chemical vapor deposition (APCVD) method at 1200 deg. C using single-precursor hexamethyildisilane: Si 2 (CH 3 ) 6 (HMDS) as Si and C precursors, and 0∼100 sccm N 2 as the dopant source gas. The mechanical properties of doped poly 3C-SiC thin films were measured by nano-indentation. Young's modulus and hardness were measured to be 285 and 35 GPa at 0 sccm N 2 , respectively. Young's modulus and hardness decreased with increasing N 2 flow rate. Surface morphology was evaluated by atomic force microscopy (AFM) according to N 2 flow rate.

  8. Structure and magnetoresistive properties of current-perpendicular-to-plane pseudo-spin valves using polycrystalline Co2Fe-based Heusler alloy films

    International Nuclear Information System (INIS)

    Nakatani, T.M.; Du, Ye; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

    2013-01-01

    We report current-perpendicular-to-plane giant magnetoresistance (CPP–GMR) of pseudo-spin valves (PSVs) with polycrystalline Co 2 Fe(Al 0.5 Si 0.5 ) (CFAS) and Co 2 Fe(Ga 0.5 Ge 0.5 ) (CFGG) Heusler alloy films. Strongly [0 1 1] textured polycrystalline Heusler alloy films grew on the Ta/Ru/Ag underlayer. Relatively large CPP–GMR values of ΔRA up to 4 mΩ μm 2 and ΔR/R up to 10% were obtained with 5 nm thick Heusler alloy films and Ag spacer layer by annealing CFAS PSV at 450 °C and CFGG PSV at 350 °C. Transmission electron microscopy revealed a flat and sharp interface between the [0 1 1] textured CFAS layers and the [1 1 1] textured Ag spacer layer. Annealing above an optimal temperature for each PSV led to reductions in MR values as a result of the thickening of the spacer layer induced by the Ag diffusion from the outer Ag layers

  9. Investigations on electrical, magnetic and optical behaviors of five-layered Aurivillius Bi6Ti3Fe2O18 polycrystalline films

    International Nuclear Information System (INIS)

    Bai, W.; Xu, W.F.; Wu, J.; Zhu, J.Y.; Chen, G.; Yang, J.; Lin, T.; Meng, X.J.; Tang, X.D.; Chu, J.H.

    2012-01-01

    Five-layered Aurivillius Bi 6 Ti 3 Fe 2 O 18 (BTF2) polycrystalline thin films were prepared by a chemical solution deposition route. The crystalline structures and microstructures were characterized by X-ray diffractometer, micro-Raman spectrometer and atomic force microscopy. Its electrical and magnetic properties were investigated, and especially optical properties were addressed in detail. Coexistence of the ferroelectric and weak ferromagnetic properties indicated the multiferroic behavior of the BTF2 films. The optical dielectric functions in the photon energy range of 1.13–4.13 eV have been extracted by fitting the experimental data in the light of the Tauc–Lorentz dispersion model. A direct interband transition with bandgap energy ∼ 3.72 eV was determined for the BTF2 films. The weak absorption below band-gap edge was explained by the Urbach band tail rule. Finally, the optical dispersion behaviors of the BTF2 films in the transparent oscillating region were described using a single oscillator model. - Highlights: ► Five-layered Aurivillius Bi 6 Ti 3 Fe 2 O 18 (BTF2) thin films were prepared. ► Electrical and magnetic properties of the BTF2 films were investigated. ► Optical properties of the BTF2 films were especially addressed in detail.

  10. Low-field tunnel-type magnetoresistance properties of polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 thin films

    CERN Document Server

    Shim, I B; Choi, S Y

    2000-01-01

    The low-field tunnel-type magnetoresistance (TMB) properties of sol-gel derived polycrystalline and epitaxial La sub 0 sub . sub 6 sub 7 Sr sub 0 sub . sub 3 sub 3 MnO sub 3 (LSMO) thin films were investigated. The polycrystalline thin films were fabricated on Si (100) with a thermally oxidized SiO sub 2 layer while the epitaxial thin films were grown on LaAlO sub 3 (001) single-crystal substrates. The epitaxial thin films displayed both typical intrinsic colossal magnetoresistance (CMR) and abnormal extrinsic tunnel-type magnetoresistance behaviors. Tunnel-type MR ratio as high as 0.4% were observed in the polycrystalline thin films at a field of 120 Oe at room temperature (300 K) whereas the ratios were less than 0.1% for the epitaxial films in the same field range. The low-field tunnel-type MR of polycrystalline LSMO/SiO sub 2 ?Si (100) thin films originated from the behaviors of the grain-boundary properties.

  11. Synthesis of c-oriented YbBa2Cu3O7-δ films on single and polycrystalline substrates by oxidation of liquid alloys

    International Nuclear Information System (INIS)

    Luo, J.S.; Merchant, N.; Maroni, V.A.; Gruen, D.M.; Tani, B.S.; Sandhage, K.H.; Craven, C.A.

    1991-11-01

    Textured superconducting films of YbBa 2 Cu 3 O 7-δ supported on single and polycrystalline substrates were prepared by oxidation of a liquid precursor alloy. The substrates were coated by dipping them into a molten alloy (YbBa 2 Cu 3 , m.p. ∼870 degree C), withdrawing them from the melt, then oxidizing the adhering liquid alloy layer to the corresponding oxide phase, i.e., YbBa 2 Cu 3 O 7-δ . Samples prepared in this way exhibited a superconducting transition at ∼80 K following annealing in pure OP 2 at 500 degree C. With SrTiO 3 (100) and MgO (100) substrates, evidence was seen for the epitaxial growth of YbBa 2 Cu 3 O 7-δ crystals having their c-axis parallel to the [100] direction of the substrate. For polycrystalline MgO, x-ray diffraction and microstructural examination showed that the high-T c crystallites in the films were also oriented with their c-axis perpendicular to the substrate surface, but the a and b axes directions were randomly oriented rather than epitaxial

  12. Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

    KAUST Repository

    Yandjah, L.

    2018-04-03

    Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.

  13. Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

    Science.gov (United States)

    Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

    2014-08-01

    Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

  14. Structural and electrical properties of polycrystalline CdSe thin films, before and after irradiation with 6 MeV accelerated electrons

    International Nuclear Information System (INIS)

    Ion, L.; Antohe, V.A.; Tazlaoanu, C.; Antohe, S.; Scarlat, F.

    2004-01-01

    Structural and electrical properties of polycrystalline CdSe thin films irradiated with high-energy electrons are analyzed. The samples were prepared by vacuum deposition of CdSe powder onto optical glass substrate. Their structure and the temperature dependence of the electrical resistance were determined, both before and after irradiation with 6 MeV electrons at fluencies up to 10 16 electrons/cm 2 . There were no measurable changes in the crystalline structure of the films after irradiation. Electrical properties are controlled by the defect level of donor type, possibly a selenium vacancy, with two ionizing states having ionization energies of about 0.40 eV and 0.22 eV, respectively. The major effect of the irradiation is to increase significantly the concentration of these defects. (authors)

  15. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  16. Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

    Science.gov (United States)

    Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

    2018-01-01

    The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

  17. Structural and electrical properties of c-axis epitaxial and polycrystalline Sr sub 3 Bi sub 4 Ti sub 6 O sub 2 sub 1 thin films

    CERN Document Server

    Zhang, S T; Sun, H P; Pan Xiao Qing; Tan, W S; Liu, Z G; Ming, N B

    2003-01-01

    c-axis epitaxial and polycrystalline Sr sub 3 Bi sub 4 Ti sub 6 O sub 2 sub 1 (SBTi) thin films were fabricated on (001)SrTiO sub 3 (STO) single-crystal substrates and Pt/Ti sub 2 /SiO sub 2 /Si substrates respectively, by pulsed laser deposition (PLD). Structures of the films were systematically characterized by x-ray diffraction (XRD), including theta-2 theta-scans, rocking curve scans and phi-scans, atomic force microscopy and transmission electron microscopy (TEM). The epitaxial orientation relation of the SBTi films on STO is established by selected-area electron diffraction and XRD phi-scans to be (001)SBTi || (001)STO, [11-bar 0]SBTi || [010]STO. Cross-sectional high-resolution TEM studies on the epitaxial SBTi film revealed that SBTi is a single-phase material. A special kind of irrational atomic shift along the [001] direction was observed and is discussed in detail. By using an evanescent microwave probe (EMP), the room-temperature dielectric constant of the epitaxial SBTi film was measured to be 21...

  18. A MONTÉ CARLO MODEL FOR SIMULATING THE NITROGEN DIFFUSION EFFECT INTO B-LPCVD-NIDOS POLYCRYSTALLINE THIN FILMS

    OpenAIRE

    S ALLAG; S MERABET; M BOUKEZZATA

    2012-01-01

    The principal objective of our current work, is to study the influence of different treatment from surface which makes it possible to improve the properties of materials by technique of beam of ions (diffusion – implantation), on the distribution of the particles in a semiconductor the prone polycrystalline Silicon of our study, largely used in micro-electronics.  The interest of this study is related to the ceaseless requirements in industry for increasingly reduced, powerful materials and w...

  19. Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

    Science.gov (United States)

    Lai, T.; Potter, B. G.; Simmons-Potter, K.

    2017-08-01

    Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

  20. Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Bing-Rui; Lo, Shih-Yung; Wuu, Dong-Sing; Ou, Sin-Liang; Mao, Hsin-Yuan; Wang, Jui-Hao; Horng, Ray-Hua

    2012-01-01

    Large grain polycrystalline silicon (poly-Si) films on glass substrates have been deposited on an aluminum-induced crystallization (AIC) seed layer using hot-wire chemical vapor deposition (HWCVD). A poly-Si seed layer was first formed by the AIC process and a thicker poly-Si film was subsequently deposited upon the seed layer using HWCVD. The effects of AIC annealing parameters on the structural and electrical properties of the poly-Si seed layers were characterized by Raman scattering spectroscopy, field-emission scanning electron microscopy, and Hall measurements. It was found that the crystallinity of seed layer was enhanced with increasing the annealing duration and temperature. The poly-Si seed layer formed at optimum annealing parameters can reach a grain size of 700 nm, hole concentration of 3.5 × 10 18 cm −3 , and Hall mobility of 22 cm 2 /Vs. After forming the seed layer, poly-Si films with good crystalline quality and high growth rate (> 1 nm/s) can be obtained using HWCVD. These results indicated that the HWCVD-deposited poly-Si film on an AIC seed layer could be a promising candidate for thin-film Si photovoltaic applications. - Highlights: ►Poly-Si seed layers are formed by aluminum-induced crystallization (AIC) process. ►Poly-Si on AIC seed layers are prepared by hot-wire chemical vapor deposition. ►AIC process parameters affect structural properties of poly-Si films. ►Increasing the annealing duration and temperature increases the film crystallinity.

  1. Evaluation the image obtained from X-ray flat-panel detectors utilizing a polycrystalline CdZnTe film as the conversion layer

    International Nuclear Information System (INIS)

    Tokuda, S.; Kishihara, H.; Kaino, M.; Sato, T.

    2006-01-01

    We can expect that fluoroscopic images with a high sensitivity and excellent detective efficiency can be obtained by using a semiconductor with a small W factor for the conversion layer of X-ray flat-panel detectors, which have experienced a rapid gain inpopularity for medical and non-destructive industrial inspection uses in recent years. We believe that polycrystalline CdZnTe film formed by the closed spaced sublimation (CSS) method is a promising conversion material for next-generation high efficiency X-ray flat-panel detectors, and have previously reported the results of feasibility studies. In this paper, we present an overview of X-ray flat-panel detectors and the features of CdZnTe film, then we describe the CSS method of deposition and evaluation of the physical characteristics of CdZnTe film, and finally we present the results of our fabrication and testing of proto-type detectors utilizing CdZnTe film. (author)

  2. Ultrafast carrier dynamics and third-order nonlinear optical properties of AgInS2/ZnS nanocrystals

    Science.gov (United States)

    Yu, Kuai; Yang, Yang; Wang, Junzhong; Tang, Xiaosheng; Xu, Qing-Hua; Wang, Guo Ping

    2018-06-01

    Broad photoluminescence (PL) emission, a large Stokes shift and extremely long-lived radiative lifetimes are the characteristics of ternary I–III–VI semiconductor nanocrystals (NCs), such as CuInS2 and AgInS2. However, the lack of understanding regarding the intriguing PL mechanisms and photo-carrier dynamics limits their further applications. Here, AgInS2 and AgInS2/ZnS NCs were chemically synthesized and their carrier dynamics were studied by time-resolved PL spectroscopy. The results demonstrated that the surface defect state, which contributed dominantly to the non-radiative decay processes, was effectively passivated through ZnS alloying. Femtosecond transient absorption spectroscopy was also used to investigate the carrier dynamics, revealing the electron storage at the surface state and donor state. Furthermore, the two photon absorption properties of AgInS2 and AgInS2/ZnS NCs were measured using an open-aperture Z-scan technique. The improved third-order nonlinear susceptibility {χ }(3) of AgInS2 through ZnS alloying demonstrates potential application in two photon PL biological imaging.

  3. Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

    Science.gov (United States)

    Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

    2018-04-01

    A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

  4. Polycrystalline strengthening

    DEFF Research Database (Denmark)

    Hansen, Niels

    1985-01-01

    for the understanding of polycrystalline strengthening is obtained mainly from surface relief patterns and from bulk structures observed by transmission electron microscopy of thin foils. The results obtained by these methods are discussed and correlations are proposed. A number of features characterizing the deformed...... structure are summarized and the behavior of a number of metals and alloys is reviewed with emphasis on the structural changes in the interior of the grains and in the vicinity of the grain boundaries. The models for strain accommodation during deformation are discussed on the basis of the microstructures...

  5. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    Science.gov (United States)

    Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  6. A MONTÉ CARLO MODEL FOR SIMULATING THE NITROGEN DIFFUSION EFFECT INTO B-LPCVD-NIDOS POLYCRYSTALLINE THIN FILMS

    Directory of Open Access Journals (Sweden)

    S ALLAG

    2012-06-01

    Full Text Available The principal objective of our current work, is to study the influence of different treatment from surface which makes it possible to improve the properties of materials by technique of beam of ions (diffusion – implantation, on the distribution of the particles in a semiconductor the prone polycrystalline Silicon of our study, largely used in micro-electronics.  The interest of this study is related to the ceaseless requirements in industry for increasingly reduced, powerful materials and with the weakest possible cost price.       We thus have, makes a nitriding in gas phase during the phase of deposit LPCVD of polycrystalline Silicon, then one made an ionic implantation with the Bore ions.  The results obtained, starting from a simulation based on the Monte Carlo method, although they are carried out with amounts much lower than the really introduced amounts, being given the limitation of the machine used, satisfied the predictions established at the beginning and encourage us to continue this study from the point of view of the use of this material in particular in varied fields.

  7. Ellipsometry study of optical parameters of AgIn5S8 crystals

    Science.gov (United States)

    Isik, Mehmet; Gasanly, Nizami

    2015-12-01

    AgIn5S8 crystals grown by Bridgman method were characterized for optical properties by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficient were obtained from ellipsometry experiments carried out in the 1.2-6.2 eV range. Direct band gap energy of 1.84 eV was found from the analysis of absorption coefficient vs. photon energy. The oscillator energy, dispersion energy and zero-frequency refractive index, high-frequency dielectric constant values were found from the analysis of the experimental data using Wemple-DiDomenico and Spitzer-Fan models. Crystal structure and atomic composition ratio of the constituent elements in the AgIn5S8 crystal were revealed from structural characterization techniques of X-ray diffraction and energy dispersive spectroscopy.

  8. Adhesion analysis of polycrystalline diamond films on molybdenum by means of scratch, indentation and sand abrasion testing

    NARCIS (Netherlands)

    Buijnsters, J.G.; Shankar, P.; Enckevort, W.J.P. van; Schermer, J.J.; Meulen, J.J. ter

    2005-01-01

    Diamond films have been grown by hot-filament chemical vapour deposition (CVD) on molybdenum substrates under different growth conditions. The films grown with increasing substrate temperatures show a higher interconnection of diamond grains, whereas increasing methane concentrations in the 0.5-4.0%

  9. Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

    Energy Technology Data Exchange (ETDEWEB)

    Matsuyama, H., E-mail: matsu@phys.sci.hokudai.ac.jp [Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Nara, D.; Kageyama, R.; Honda, K.; Sato, T.; Kusanagi, K. [Department of Condensed Matter Physics, Graduate School of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Srinivasan, E. [Creative Research Institution (CRIS), Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan); Koike, K. [Department of Physics, Faculty of Science, Hokkaido University, Sapporo, Hokkaido 060-0810 (Japan); Creative Research Institution (CRIS), Hokkaido University, Sapporo, Hokkaido 001-0021 (Japan)

    2016-03-15

    We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM) in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

  10. Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

    Directory of Open Access Journals (Sweden)

    H. Matsuyama

    2016-03-01

    Full Text Available We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

  11. Adhesion analysis of polycrystalline diamond films on molybdenum by means of scratch, indentation and sand abrasion testing

    Energy Technology Data Exchange (ETDEWEB)

    Buijnsters, J.G. [Applied Physics, IMM, Department of Applied Physics, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Shankar, P. [Metallurgy and Materials Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603 102 (India); Enckevort, W.J.P. van [Solid State Chemistry, IMM, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Schermer, J.J. [Experimental Solid State Physics III, IMM, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands); Meulen, J.J. ter [Applied Physics, IMM, Department of Applied Physics, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen (Netherlands)]. E-mail: htmeulen@sci.kun.nl

    2005-03-01

    Diamond films have been grown by hot-filament chemical vapour deposition (CVD) on molybdenum substrates under different growth conditions. The films grown with increasing substrate temperatures show a higher interconnection of diamond grains, whereas increasing methane concentrations in the 0.5-4.0% range lead to a transition from micro- towards nanocrystalline films. X-ray diffraction analysis shows Mo{sub 2}C interlayer formation. Indentation, scratch and sand erosion tests are used to evaluate the adhesion strength of the diamond films. Using steel ball indenters (diameter 750 {mu}m), indentation and scratch adhesion tests are performed up to final loads of 200 N. Upon indentation, the load values at which diamond film failure such as flaking and detachment is first observed, increase for increasing temperatures in the deposition temperature range of 450-850 deg C. The scratch adhesion tests show critical load values in the range of 16-40 N normal load for films grown for 4 h. In contrast, diamond films grown for 24 h at a methane concentration of 0.5% do not show any failure at all upon scratching up to 75 N. Film failure upon indenting and scratching is also found to decrease for increasing methane concentration in the CVD gas mixture. The sand abrasion tests show significant differences in coating failure for films grown at varying CH{sub 4}/H{sub 2} ratios. In contrast to the other tests, here best coating performance is observed for the films deposited with a methane concentration of 4%.

  12. Photoluminescence of epitactical and polycrystalline CuInS{sub 2} layers for thin-film solar cells; Photolumineszenz epitaktischer und polykristalliner CuInS{sub 2}-Schichten fuer Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Eberhardt, J.

    2007-12-18

    The present thesis deals with one- and polycrystalline CuInS{sub 2} absorber layers for thin-film solar cells and especially with their optical and structural characterization. By means of detailed temperature- and power-dependent photoluminescence measurements in epitactical and polycrystalline absorber layers different radiative transitions could be analyzed and identified. The spectra were dominated by broad luminescence bands of deep perturbing levels. The implantation of hydrogen at low energies led to a passivation of these perturbing levels. On the base of the optical studies on epitactical and polycrystalline absorber layers a new improved defect model for CuInS{sub 2} could be developed. The model contains two donor and two acceptor levels with following ionization energies: D-1=46 meV, D-2=87 meV, A-1=70 meV, and A-2=119 meV.

  13. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Yun, J., E-mail: j.yun@unsw.edu.au; Varalmov, S.; Huang, J.; Green, M. A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Kim, K. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052 (Australia); Suntech R and D Australia, Botany, New South Wales 2019 (Australia)

    2014-06-16

    The effects of the deposition temperature on the microstructure, crystallographic orientation, and electrical properties of a 10-μm thick evaporated Si thin-film deposited on glass and crystallized using a diode laser, are investigated. The crystallization of the Si thin-film is initiated at a deposition temperature between 450 and 550 °C, and the predominant (110) orientation in the normal direction is found. Pole figure maps confirm that all films have a fiber texture and that it becomes stronger with increasing deposition temperature. Diode laser crystallization is performed, resulting in the formation of lateral grains along the laser scan direction. The laser power required to form lateral grains is higher in case of films deposited below 450 °C for all scan speeds. Pole figure maps show 75% occupancies of the (110) orientation in the normal direction when the laser crystallized film is deposited above 550 °C. A higher density of grain boundaries is obtained when the laser crystallized film is deposited below 450 °C, which limits the solar cell performance by n = 2 recombination, and a performance degradation is expected due to severe shunting.

  14. Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy

    International Nuclear Information System (INIS)

    Tenne, D.A.; Soukiassian, A.; Xi, X.X.; Taylor, T.R.; Hansen, P.J.; Speck, J.S.; York, R.A.

    2004-01-01

    We have applied Raman spectroscopy to study the influence of thermal strain on the vibrational properties of polycrystalline Ba 0.5 Sr 0.5 TiO 3 films. The films were grown by rf magnetron sputtering on Pt/SiO 2 surface using different host substrates: strontium titanate, sapphire, silicon, and vycor glass. These substrates provide a systematic change in the thermal strain while maintaining the same film microstructure. From the temperature dependence of the ferroelectric A 1 soft phonon intensity, the ferroelectric phase transition temperature, T C , was determined. We found that T C decreases with increasing tensile stress in the films. This dependence is different from the theoretical predictions for epitaxial ferroelectric films. The reduction of the ferroelectric transition temperature with increasing biaxial tensile strain is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films

  15. Field-tuned superconductor-insulator transitions and Hall resistance in thin polycrystalline MoN films

    Science.gov (United States)

    Makise, Kazumasa; Ichikawa, Fusao; Asano, Takayuki; Shinozaki, Bunju

    2018-02-01

    We report on the superconductor-insulator transitions (SITs) of disordered molybdenum nitride (MoN) thin films on (1 0 0) MgO substrates as a function of the film thickness and magnetic fields. The T c of the superconducting MoN films, which exhibit a sharp superconducting transition, monotonically decreases as the normal state R sq increases with a decreasing film thickness. For several films with different thicknesses, we estimate the critical field H c and the product zν  ≃  0.6 of the dynamical exponent z and the correlation length exponent ν using a finite scaling analysis. The value of this product can be explained by the (2  +  1) XY model. We found that the Hall resistance ΔR xy (H) is maximized when the magnetic field satisfies H HP(T) \\propto |1  -  T/T C0| in the superconducting state and also in the normal states owning to the superconducting fluctuation corresponding to the ghost critical magnetic field. We measured the Hall conductivity δσ xy (H)  =  σ xy (H)  -  σ xyn and fit the Gaussian approximation theory for δσ xy (H) to the experimental data. Agreement between the data and the theory beyond H c suggests the survival of the Cooper pair in the insulating region of the SIT.

  16. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Jany, Ch.

    1998-01-01

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp 2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  17. High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate

    International Nuclear Information System (INIS)

    Qin, Guoxuan; Yuan, Hao-Chih; Ma, Zhenqiang; Yang, Hongjun; Zhou, Weidong

    2011-01-01

    Inexpensive polycrystalline Si (poly-Si) with large grain size is highly desirable for flexible electronics applications. However, it is very challenging to directly deposit high-quality poly-Si on plastic substrates due to processing constrictions, such as temperature tolerance and residual stress. In this paper, we present our study on poly-Si membranes that are stress free and most importantly, are transferrable to any substrate including a low-temperature polyethylene terephthalate (PET) substrate. We formed poly-Si-on-insulator by first depositing small-grain size poly-Si on an oxidized Si wafer. We then performed high-temperature annealing for recrystallization to obtain larger grain size. After selective doping on the poly-Si-on-insulator, buried oxide was etched away. By properly patterning the poly-Si layer, residual stress in the released poly-Si membranes was completely relaxed. The flat membrane topology allows the membranes to be print transferred to any substrates. High-performance TFTs were demonstrated on the transferred poly-Si membranes on a PET substrate

  18. Effect of laser irradiation on the structural, morphological and electrical properties of polycrystalline TiO2 thin films

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available TiO2 thin film is deposited on glass substrate by sol-gel dip coating technique. After deposition, films were irradiated by continuous wave (CW diode laser at an angle of 45°. XRD shows both the anatase and brookite phases of TiO2. Nano particles of regular and control sizes are appeared in SEM micrographs. Therefore, shape and size of nano particles can be control by using Laser irradiation. The average sheet resistivity of TiO2 thin film irradiated by 0, 2, 4 and 6 min are 6.72 × 105, 5.32 × 105, 3.44 × 105 and 4.95 × 105 (ohm-m respectively, according to four point probe. Keywords: TiO2, Diode laser, XRD, SEM

  19. Effect of laser irradiation on the structural, morphological and electrical properties of polycrystalline TiO2 thin films

    Science.gov (United States)

    Khan, M. I.; Ali, Asghar

    TiO2 thin film is deposited on glass substrate by sol-gel dip coating technique. After deposition, films were irradiated by continuous wave (CW) diode laser at an angle of 45°. XRD shows both the anatase and brookite phases of TiO2. Nano particles of regular and control sizes are appeared in SEM micrographs. Therefore, shape and size of nano particles can be control by using Laser irradiation. The average sheet resistivity of TiO2 thin film irradiated by 0, 2, 4 and 6 min are 6.72 × 105, 5.32 × 105, 3.44 × 105 and 4.95 × 105 (ohm-m) respectively, according to four point probe.

  20. Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

    International Nuclear Information System (INIS)

    Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

    2009-01-01

    Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

  1. Elastic anisotropy of polycrystalline Au films: Modeling and respective contributions of X-ray diffraction, nanoindentation and Brillouin light scattering

    International Nuclear Information System (INIS)

    Faurie, D.; Djemia, P.; Le Bourhis, E.; Renault, P.-O.; Roussigne, Y.; Cherif, S.M.; Brenner, R.; Castelnau, O.; Patriarche, G.; Goudeau, Ph.

    2010-01-01

    Elastic properties of non-textured and {1 1 1}-fiber-textured gold thin films were investigated experimentally by several complementary techniques, namely in situ tensile testing under X-ray diffraction (XRD), nanoindentation and Brillouin light scattering (BLS). Specimens were probed along different directions to reveal the strong effects of elastic anisotropy at the (local) grain and (global) film scales. XRD allows the investigation of both local and global anisotropies, while BLS and nanoindentation are limited to global analyses. A micromechanical model, based on the self-consistent scheme, and accounting for the actual microstructure of the films, is applied to interpret experimental data. Although different types of elastic constants can be determined with the used experimental techniques (static/dynamic, local/global), a good agreement is obtained, showing that comparison of these techniques is feasible when carried out carefully. In particular, the use of a micromechanical model to estimate the effects of the local elastic anisotropy at the film scale is unavoidable. The presented results show that XRD, BLS and nanoindentation should capture anisotropic texture effects on elastic constants measurements for materials with a Zener anisotropy index larger than 2. Conversely, the actual texture of a given specimen should be taken into account for a proper analysis of elastic constants measurements using those three experimental techniques.

  2. Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

    International Nuclear Information System (INIS)

    Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

    2005-01-01

    CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

  3. Combinatorial investigation of the effects of sodium on Cu 2ZnSnSe4 polycrystalline thin films

    Science.gov (United States)

    Gibbs, Alex Hilton

    Cu2ZnSnSe4 (CZTSe) possess highly suitable optical and electronic properties for use as an absorber layer in thin film solar cells. CZTSe also has potential to achieve terawatt level solar energy production due to its inexpensive and abundant material constituents. Currently, fabricating CZTSe devices with the expected theoretical performance has not been achieved, making the growth and formation of CZTSe an interesting topic of research. In this work, a two-step vacuum fabrication process consisting of RF co-sputtering followed by reactive annealing was explored as a viable technique for synthesizing CZTSe thin films. Furthermore, the enhancement of the fabrication process by the incorporation of sodium during annealing was studied using a combinatorial approach. Film composition was analyzed using electron dispersive spectroscopy. Structure, phase morphology, and formation were determined using scanning electron microscopy, x-ray diffraction, atomic force microscopy and raman spectroscopy. Optical and electronic properties were characterized using UV-Vis and Voc were measurements under a one sun solar simulator. RF co-sputtering CuSe, ZnSe, and SnSe precursors produced films with good thickness uniformity, adhesion and stoichiometry control over 3 x 3 in 2 substrates. Composition measurements showed that the precursor films maintained stability during an annealing process of 580° C for 20 minutes producing near stoichiometric CZTSe. However, grain size was small with an average diameter of 350 nm. The CZTSe film produced by this process exhibited a suitable absorption coefficient of > 104 cm-1 and aband gap near 1.0 eV. The film also produced an XRD pattern consistent with tetragonal CZTSe with no secondary phase formation with the exception of approximately 12.5 nm of interfacial MoSe2 formation at the back contact. The combinatorial investigation of the influence of sodium on CZTSe growth and morphology was achieved using a custom built constant withdraw

  4. Oriented thin films of Na {sub 0.6}CoO {sub 2} and Ca {sub 3}Co {sub 4}O {sub 9} deposited by spin-coating method on polycrystalline substrate

    Energy Technology Data Exchange (ETDEWEB)

    Buršík, J., E-mail: bursik@iic.cas.cz [Institute of Inorganic Chemistry ASCR, 250 68 Řež near Prague (Czech Republic); Soroka, M. [Institute of Inorganic Chemistry ASCR, 250 68 Řež near Prague (Czech Republic); Knížek, K.; Hirschner, J.; Levinský, P.; Hejtmánek, J. [Institute of Physics ASCR, Cukrovarnická 10, 162 00 Prague 6 (Czech Republic)

    2016-03-31

    Thin film of two thermoelectric materials, Na {sub x}CoO {sub 2} (x ~ 0.6) and Ca {sub 3}Co {sub 4}O {sub 9}, was deposited using the sol–gel spin-coating method on a polycrystalline yttria-stabilized zirconia (YSZ) substrate. Despite the polycrystalline character of the substrate, the c-axis preferred orientation was obtained, suggesting self-assembly growth mechanism. The deposition procedure used offers several benefits, namely simplicity, high deposition rate, low fabrication cost as well as low price of the substrate, and low thermal conductivity of the substrate suitable for characterization of thermoelectric properties and for applications. The thermoelectric properties of the thin films are comparable with bulk materials. The samples exhibit power factor 0.23 - 0.26 × 10{sup -3} W ⋅ m {sup -1} ⋅ K {sup -2} at 750 K. - Highlights: • Thin film of thermoelectric cobaltates was deposited using the spincoating method. • The c-axis preferred orientation was obtained on polycrystalline YSZ substrate. • Benefits of the chosen procedure are simplicity, low cost, and low thermal conductivity of the substrate.

  5. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Joon-Ho [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Kyoung-Kook [Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi 429-793 (Korea, Republic of); Seong, Tae-Yeon, E-mail: tyseong@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2011-01-15

    Al-doped ZnO (AZO, ZnO:Al{sub 2}O{sub 3} = 98:2 wt%) films are deposited on different substrates by an RF magnetron sputtering and subsequently annealed at three different conditions to investigate the microstructural, electrical, and optical properties. X-ray diffraction and scanning electron microscope results show that all the samples are polycrystalline and the samples rapid-thermal-annealed at 900 deg. C in an N{sub 2} ambient contain larger grains compared to the furnace-annealed samples. It is shown that the sample deposited at room temperature on the sapphire gives a resistivity of 5.57 x 10{sup -4} {Omega} cm when furnace-annealed at 500 deg. C in a mixture of N{sub 2}:H{sub 2} (9:1). It is also shown that the Hall mobility vs. carrier concentration ({mu}-n) relation is divided into two groups, depending on the annealing conditions, namely, either rapid-thermal annealing or furnace annealing. The relations are described in terms of either grain boundary scattering or ionized impurity scattering mechanism. In addition, the samples produce fairly high transmittance of 91-96.99% across the wavelength region of 400-1100 nm. The optical bandgaps of the samples increase with increasing carrier concentration.

  6. A Monte Carlo simulation study of boron profiles as-implanted into LPCVD NiDoS polycrystalline thin films

    Science.gov (United States)

    Boukezzata, M.; Ait-Kaki, A.; Temple-Boyer, P.; Scheid, E.

    2003-03-01

    This work presents a Monte Carlo simulation study of boron profiles obtained from as-implanted ions into thin films nitrogen doped silicon (NiDoS) thin films. These films are performed by LPCVD technique from Si2H6 and NH3 gas sources, four values deliberately chosen, of the ratio NH3/Si2H6 to obtain samples, differently in situ nitrogen-doped. Taking into account the effect of the codoping case, and the structure specificity of these films, an accurate Monte Carlo model based on binary collisions in a multi-atomic target was performed. Nitrogen atoms present in the target is shown to affect the boron profiles and confirms clearly a reduction penetration effect which becomes more significant at high nitrogen concentrations. Whereas, the fine-grained polysilicon structure, and thus the presence of grains (G) and grain boundaries (GB), is known to enhance the opposite phenomenon by assuming an effective role played by GB's in the scattering calculation process of the incident ions. This role is represented by the change in direction of the incident ion after interaction with GB without corresponding loss in its energy. The results obtained show an enhancement of the stopping parameter when nitrogen concentration increases, while the GB interaction remains very important. This behavior is due to a great number of GB's interactions with boron atoms which gave low deflection angles. So that, the average positions described by the sequences of trajectories took place farther than what expected with channeling effect in crystal silicon materials.

  7. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V. [School of Materials Science and Engineering, University of New South Wales, Sydney 2052 (Australia); Ihlefeld, J. [Electronic, Optical, and Nanomaterials Department, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2014-10-28

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO{sub 2}/(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  8. In-situ investigation of thermal instabilities and solid state dewetting in polycrystalline platinum thin films via confocal laser microscopy

    International Nuclear Information System (INIS)

    Jahangir, S.; Cheng, Xuan; Huang, H. H.; Nagarajan, V.; Ihlefeld, J.

    2014-01-01

    Solid state dewetting and the subsequent morphological changes for platinum thin films grown on zinc oxide (ZnO) buffered (001) silicon substrates (Pt/ZnO/SiO 2 /(001)Si system) is investigated under vacuum conditions via a custom-designed confocal laser microscope coupled with a laser heating system. Live imaging of thin film dewetting under a range of heating and quenching vacuum ambients reveals events including hillock formation, hole formation, and hole growth that lead to formation of a network of Pt ligaments, break up of Pt ligaments to individual islands and subsequent Pt islands shape reformation, in chronological fashion. These findings are corroborated by ex-situ materials characterization and quantitative electron microscopy analysis. A secondary hole formation via blistering before film rupture is revealed to be the critical stage, after which a rapid dewetting catastrophe occurs. This process is instantaneous and cannot be captured by ex-situ methods. Finally, an intermetallic phase forms at 900 °C and alters the morphology of Pt islands, suggesting a practical limit to the thermal environments that may be used for these platinized silicon wafers in vacuum conditions.

  9. Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yan, X.L.; Coetsee, E. [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063, Guangdong (China); Swart, H.C., E-mail: swartHC@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Terblans, J.J., E-mail: terblansjj@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa)

    2017-07-31

    Highlights: • Linear Least Square (LLS) method used to separate Ni and Cu Auger spectra. • The depth-dependent ion sputtering induced roughness was quantitatively evaluated. • The depth resolution better when profiling with dual-ion beam vs. a single-ion beam. • AES depth profiling with a lower ion energy results in a better depth resolution. - Abstract: The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO{sub 2} substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar{sup +} ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

  10. Energy of formation for AgIn liquid binary alloys along the line of phase separation

    CERN Document Server

    Bhuiyan, G M; Ziauddin-Ahmed, A Z

    2003-01-01

    We have investigated the energy of formation for AgIn liquid binary alloys along the solid-liquid phase separation line. A microscopic theory based on the first order perturbation has been applied. The interionic interaction and a reference liquid are the fundamental components of the theory. These are described by a local pseudopotential and the hard sphere liquids, respectively. The results of calculations reveal a characteristic feature that the energy of formation becomes minimum at the equiatomic composition, and thus indicates maximal mix-ability at this concentration. The energy of formation at a particular thermodynamic state that is at T 1173 K predicts the experimental trends fairly well.

  11. Crystallographic analysis of the solid-state dewetting of polycrystalline gold film using automated indexing in a transmission electron microscope

    Directory of Open Access Journals (Sweden)

    S. A. Jang

    2015-12-01

    Full Text Available We analyzed the effect of crystallographic anisotropy on the morphological evolution of a 12-nm-thick gold film during solid-state dewetting at high temperatures using automated indexing tool in a transmission electron microscopy. Dewetting initiated at grain-boundary triple junctions adjacent to large grains resulting from abnormal grain growth driven by (111 texture development. Voids at the junctions developed shapes with faceted edges bounded by low-index crystal planes. The kinetic mobility of the edges varied with the crystal orientation normal to the edges, with a predominance of specific edges with the slowest retraction rates as the annealing time was increased.

  12. Crystallographic analysis of the solid-state dewetting of polycrystalline gold film using automated indexing in a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Jang, S. A.; Lee, H. J.; Oh, Y. J., E-mail: yjoh@hanbat.ac.kr [Department of Advanced Materials Science and Engineering, Hanbat National University, 125, Dongseo-daero, Yuseong-gu, Daejeon 305-719 (Korea, Republic of); Thompson, C. V.; Ross, C. A., E-mail: caross@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2015-12-01

    We analyzed the effect of crystallographic anisotropy on the morphological evolution of a 12-nm-thick gold film during solid-state dewetting at high temperatures using automated indexing tool in a transmission electron microscopy. Dewetting initiated at grain-boundary triple junctions adjacent to large grains resulting from abnormal grain growth driven by (111) texture development. Voids at the junctions developed shapes with faceted edges bounded by low-index crystal planes. The kinetic mobility of the edges varied with the crystal orientation normal to the edges, with a predominance of specific edges with the slowest retraction rates as the annealing time was increased.

  13. Evolution of the properties of polycrystalline metals (examplified by Fe, Ni films and permalloy foils) at ion implantation

    International Nuclear Information System (INIS)

    Kuril'chik, E.V.; Pavlov, P.V.; Pavlov, A.P.; Tetel'baum, D.I.

    1992-01-01

    It has been found that a change in microdistorsions and in a number of properties (coercive force, microhardness, friction coefficient) in Fe, Ni films as well as in rolled permalloy foils nonmonotonically depends on the ion irradiation dose. Such a behaviour of the dose dependence is explained by the competition of three mechanisms of the change in the spatial inhomogeneity (relief) of elastic stresses: formation of complexes impurity - intrinsic interstitial atom in the atmosphere of extended defects; separation of vacancies and interstitial atoms by the fields of elastic stresses; formation of precipitates of chemical compounds. The long-range action effect was revealed at irradiation of foils

  14. Improved growth of solution-deposited thin films on polycrystalline Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565, Stuttgart (Germany); Abou-Ras, Daniel [Helmholtz-Zentrum Berlin fuer Materialien und Energie, 14109, Berlin (Germany)

    2016-04-15

    CdS and Zn(O,S) grown by chemical bath deposition (CBD) are well established buffer materials for Cu(In,Ga)Se{sub 2} (CIGS) solar cells. As recently reported, a non-contiguous coverage of CBD buffers on CIGS grains with {112} surfaces can be detected, which was explained in terms of low surface energies of the {112} facets, leading to deteriorated wetting of the chemical solution on the CIGS surface. In the present contribution, we report on the effect of air annealing of CIGS thin films prior to the CBD of CdS and Zn(O,S) layers. In contrast to the growth on the as-grown CIGS layers, these buffer lay- ers grow densely on the annealed CIGS layer, even on grains with {112} surfaces. We explain the different growth behavior by increased surface energies of CIGS grains due to the annealing step, i.e., due to oxidation of the CIGS surface. Reference solar cells were processed and completed by i-ZnO/ZnO:Al layers for CdS and by (Zn,Mg)O/ZnO:Al for Zn(O,S) buffers. For solar cells with both, CdS and Zn(O,S) buffers, air-annealed CIGS films with improved buffer coverage resulted in higher power-conversion efficiencies, as compared with the devices containing as-grown CIGS layers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Thin film polycrystalline silicon solar cells. Quarterly technical progress report No. 3, 1 April 1980-30 June 1980

    Energy Technology Data Exchange (ETDEWEB)

    Sarma, K. R.; Rice, M. J.; Legge, R.; Ellis, R. J.

    1980-06-01

    During this third quarter of the program, the high pressure plasma (hpp) deposition process has been thoroughly evaluated using SiHCl/sub 3/ and SiCl/sub 4/ silicon source gases, by the gas chromatographic analysis of the effluent gases from the reactor. Both the deposition efficiency and reactor throughput rate were found to be consistently higher for hpp mode of operation compared to conventional CVD mode. The figure of merit for various chlorosilanes as a silicon source gas for hpp deposition is discussed. A new continuous silicon film deposition scheme is developed, and system design is initiated. This new system employs gas interlocks and eliminates the need for gas curtains which have been found to be problematic. Solar cells (2 cm x 2 cm area) with AM1 efficiencies of up to 12% were fabricated on RTR grain enhanced hpp deposited films. The parameters of a 12% cell under simulated AM1 illumination were: V/sub OC/ = 0.582 volts, J/sub SC/ = 28.3 mA/cm/sup 2/ and F.F. = 73.0%.

  16. A new strategy for synthesizing AgInS2 quantum dots emitting brightly in near-infrared window for in vivo imaging

    DEFF Research Database (Denmark)

    Tan, Lianjiang; Liu, Shuiping; Li, Xiaoqiang

    2015-01-01

    A new strategy for fabricating water-dispersible AgInS2 quantum dots (QDs) with bright near-infrared (NIR) emission is demonstrated. A type of multidentate polymer (MDP) was synthesized and utilized as a compact capping ligand for the AgInS2 QDs. Using silver nitrate, indium acetate and sulfur-hy...... cytotoxicity. Nude mice photoluminescence imaging shows that the MDP-capping AgInS2 QDs can be well applied to in vivo imaging. These readily prepared NIR fluorescent nanocrystals have huge potential for biomedical applications....

  17. Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Greczynski, G., E-mail: grzgr@ifm.liu.se; Hultman, L.

    2016-11-30

    Highlights: • We present first self-consistent model of TiN core level spectra with a cross-peak qualitative and quantitative agreement. • Model is tested for a series of TiN thin films oxidized to different extent by varying the venting temperature. • Conventional deconvolution process relies on reference binding energies that typically show large spread introducing ambiguity. • By imposing requirement of quantitative cross-peak self-consistency reliability of extracted chemical information is enhanced. • We propose that the cross-peak self-consistency should be a prerequisite for reliable XPS peak modelling. - Abstract: We present first self-consistent modelling of x-ray photoelectron spectroscopy (XPS) Ti 2p, N 1s, O 1s, and C 1s core level spectra with a cross-peak quantitative agreement for a series of TiN thin films grown by dc magnetron sputtering and oxidized to different extent by varying the venting temperature T{sub v} of the vacuum chamber before removing the deposited samples. So-obtained film series constitute a model case for XPS application studies, where certain degree of atmosphere exposure during sample transfer to the XPS instrument is unavoidable. The challenge is to extract information about surface chemistry without invoking destructive pre-cleaning with noble gas ions. All TiN surfaces are thus analyzed in the as-received state by XPS using monochromatic Al Kα radiation (hν = 1486.6 eV). Details of line shapes and relative peak areas obtained from deconvolution of the reference Ti 2p and N 1 s spectra representative of a native TiN surface serve as an input to model complex core level signals from air-exposed surfaces, where contributions from oxides and oxynitrides make the task very challenging considering the influence of the whole deposition process at hand. The essential part of the presented approach is that the deconvolution process is not only guided by the comparison to the reference binding energy values that often show

  18. Modification of a commercial nanoindentation system for measurement of hysteresis cycles under mechanical load in polycrystalline ferroelectric films

    Directory of Open Access Journals (Sweden)

    Rivero, Doris

    2012-02-01

    Full Text Available A commercial hardness-tester by nanoindentation was modified to use metallic indenter tips for the measurement of hysteresis cycles of ferroelectric films under mechanical load and with high lateral resolution. A novel semi-automatic charge integrating module was developed to this aim. LabVIEW 8.6 graphical programming environment was used to control the data acquisition system (DAS, the sinusoidal high voltage generator (± 300V and the charge integrating module in the measurement of the loops. The software also provides data correction due to non-ferroelectric-switching contributions to obtain reliable remanent polarization (Pr and coercive field (Ec values. It also displays the loops both in polarization-fiel(P-E and current density-field (J-E modes. The experimental set-up was validated with measurements on dense PZT films (10μm on platinised Si substrates. Coherent cycles are obtained using the novel semi-automatic charge integrator , the classical Sawyer and Tower circuit and using an electrometer. Under low indentation load causing quasi-elastic strain, the loops do not show any artifact.

    Se ha modificado un nanoindentador comercial para el uso de puntas metálicas para la medida de ciclos de histéresis en láminas ferroeléctricas bajo carga mecánica y con alta resolución lateral. A este fin, se ha desarrollado un circuito integrador de carga semi-automático. Se ha utilizado el entorno de programación gráfica LabVIEW 8.6 para el control del sistema de adquisición de datos (SAD, un generador de alto voltaje sinusoidal (± 300V y el circuito integrador en la medida del ciclo. El software desarrollado también realiza la corrección de los ciclos por sustracción de las contribuciones no debidas a la inversión de la polarización ferroeléctrica en la obtención de valores fiables de polarización remanente (Pr y campo coercitivo (Ec. La representación del ciclo puede hacerse como

  19. Advanced Photon Source Activity Report 2002 at Argonne National Laboratory, Argonne, IL, December 2003 - contribution title:''Microdiffraction Study of Epitaxial Growth and Lattice Tilts in Oxide Films on Polycrystalline Metal Substrates''

    International Nuclear Information System (INIS)

    Budai, J.D.

    2004-01-01

    Texture, the preference for a particular crystallographic orientation in polycrystalline materials, plays an important role in controlling such diverse materials properties as corrosion resistance, recording density in magnetic media and electrical transport in superconductors [1]. Without texture, polycrystalline oxide superconductors contain many high-angle, weak-linked grain boundaries which reduce critical current densities by several orders of magnitude [2]. One approach for inducing texture in oxide superconductors has been the epitaxial growth of films on rolling-assisted biaxially-textured substrates (RABiTS) [3]. In this approach, rolled Ni foils are recrystallized under conditions that lead to a high degree of biaxial {001} cube texture. Subsequent deposition of epitaxial oxide buffer layers (typically CeO 2 and YSZ as chemical barriers) and superconducting YBCO preserves the lattice alignment, eliminating high-angle boundaries and enabling high critical current densities, J c > 10 6 /cm 2 . Conventional x-ray diffraction using ω- and φ-scans typically shows macroscopic biaxial texture to within ∼5 o -10 o FWHM for all layers, but does not describe the local microstructural features that control the materials properties. Understanding and controlling the local texture and microstructural evolution of processes associated with heteroepitaxial growth, differential thermal contraction and cracking remain significant challenges in this complex system [4], as well as in many other technologically important thin-film applications

  20. Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n = 0, 2, 4

    Science.gov (United States)

    Shibata, Yosei; Tsutsumi, Jun'ya; Matsuoka, Satoshi; Matsubara, Koji; Yoshida, Yuji; Chikamatsu, Masayuki; Hasegawa, Tatsuo

    2015-04-01

    We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC8BTBT)(FnTCNQ) (diC8BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and FnTCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8,8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co-evaporation of the component donor and acceptor molecules. Organic thin-film transistors (OTFTs) fabricated with the compound films exhibited n-type field-effect characteristics, showing a mobility of 6.9 × 10-2 cm2/V s, an on/off ratio of 106, a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation.

  1. Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x-yGe xC y film deposited by ultraclean LPCVD

    International Nuclear Information System (INIS)

    Shim, Hyunyoung; Sakuraba, Masao; Murota, Junichi

    2006-01-01

    The effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline (poly) Si 1-x -y Ge x C y films was investigated. Poly-Si 1-x -y Ge x C y films were deposited on thermally oxidized Si(100) at 500-650 deg. C in a SiH 4 -GeH 4 -SiH 3 CH 3 -H 2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition. B and P were doped into the films by ion implantation and diffusion by heat-treatment. The electrical properties are characterized by grain size, width of disordered region near grain boundaries, carrier trap density and the amount of impurity segregation at grain boundaries. In the B-doped poly-Si 1-x -y Ge x C y films heat-treated at 900 deg. C, the increase of carrier concentration n poly and the decrease of resistivity ρ poly with Ge addition are caused by the narrowing of the width of disordered regions, i.e., crystallization of disordered regions induced by Ge atoms. The decrease of n poly and the increase of ρ poly with C addition are explained by the suppression of crystallization of disordered region due to C atom segregation at grain boundaries. In the P-doped poly-Si 1-x -y Ge x C y films, it is found that n poly and ρ poly are influenced by P atom segregation at grain boundaries due to lowering solid solubility of P in grain by the existence of Ge

  2. Electrochemical preparation and characterization of n-CdSe sub 0. 65 Te sub 0. 35 polycrystalline thin films: Influence of annealing

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M T; Ortega, J [Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas, Madrid (Spain). Inst. de Energias Renovables

    1989-12-01

    CdSe{sub 0.65}Te{sub 0.35} thin films have been prepared by electrodeposition. The films were characterized by X-ray diffraction, optical and photoelectrochemical methods. The influence of annealing treatments on the physical parameters (grain size, d, donor concentration, N{sub D}, and hole diffusion length, L{sub P}) determining the photoelectrochemical behaviour of electrodeposited CdSe{sub 0.65}Te{sub 0.35} thin films in contact with sulfide/polysulfide electrolytes have been systematically studied. (orig.).

  3. Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films

    International Nuclear Information System (INIS)

    Bai, W.; Zhu, J.Y.; Wang, J.L.; Lin, T.; Yang, J.; Meng, X.J.; Tang, X.D.; Zhu, Z.Q.; Chu, J.H

    2012-01-01

    The effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius layer-structured Bi 5 Ti 3 FeO 15 (BTF) films were investigated. It was found that an annealing temperature above 625 °C can lead to the appearance of Bi 4 Ti 3 O 12 (BiT) secondary phase on Pt substrates. The reduction of the grain sizes was simultaneously confirmed by X-ray diffraction and atomic force microscopy with the introduction of the BiT phase. Moreover, the remanent polarization and coercive field of the BTF films were dramatically enhanced with the introduction of the BiT phase. Improved ferromagnetism for the BTF films was demonstrated upon increasing annealing temperature. Our data indicated that the ferroelectricity strongly correlated with the growth orientation of the BTF films. Finally, the possible factors for the obvious increase of the remanent polarization and coercive field, and the possible reasons for the enhanced ferromagnetic properties were discussed with increasing annealing temperature. - Highlights: ► Effects of annealing temperature on physical properties of BTF films were studied. ► Improved multiferroic properties were shown with annealing temperature. ► Ferroelectricity strongly depended on the growth orientation of the BTF films. ► Possible factors were proposed to explain the improved multiferroic properties.

  4. Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ede, Anthony

    2001-01-01

    The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

  5. Crystallographic structure and grain size of polycrystalline Cu{sub 2}ZnSnS{sub 4} nanoparticles and thin films studied with XRD and SEM

    Energy Technology Data Exchange (ETDEWEB)

    Zutz, Folker; Chory, Christine; Riedel, Ingo; Parisi, Juergen [Thin Film Photovoltaics, Energy and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany)

    2011-07-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS) is a compound semiconductor with an absorption coefficient of >10{sup 4} cm{sup -1} and energy gap of about 1.5 eV. Because CZTS is comprised of abundant and non-toxic precursor elements the semiconductor represents an attractive material for low-cost thin film solar cells. CZTS nanoparticles (NP) were prepared in a low-temperature colloidal synthesis yielding high amounts per synthesis cycle. For thin film deposition the NPs were converted to an ink which can be processed to thin films via printing techniques. Finally, the thin films were annealed in argon atmosphere at different temperatures in order to control the growth of microcrystallites. The photoelectrical quality of the semiconductor sensitively depends on the relative concentrations of the precursor elements (band gap, crystallographic phases) and the average grain size (charge transport). We report on structural investigations (X-ray diffraction, electron microscopy) of CZTS dried powders and thin films processed from inks with varying chemical compositions. Further, the evolution of the grain size was studied as function of the annealing temperature.

  6. X-ray spectroscopic study of amorphous and polycrystalline PbO films, α-PbO, and β-PbO for direct conversion imaging.

    Science.gov (United States)

    Qamar, A; LeBlanc, K; Semeniuk, O; Reznik, A; Lin, J; Pan, Y; Moewes, A

    2017-10-13

    We investigated the electronic structure of Lead Oxide (PbO) - one of the most promising photoconductor materials for direct conversion x-ray imaging detectors, using soft x-ray emission and absorption spectroscopy. Two structural configurations of thin PbO layers, namely the polycrystalline and the amorphous phase, were studied, and compared to the properties of powdered α-PbO and β-PbO samples. In addition, we performed calculations within the framework of density functional theory and found an excellent agreement between the calculated and the measured absorption and emission spectra, which indicates high accuracy of our structural models. Our work provides strong evidence that the electronic structure of PbO layers, specifically the width of the band gap and the presence of additional interband and intraband states in both conduction and valence band, depend on the deposition conditions. We tested several model structures using DFT simulations to understand what the origin of these states is. The presence of O vacancies is the most plausible explanation for these additional electronic states. Several other plausible models were ruled out including interstitial O, dislocated O and the presence of significant lattice stress in PbO.

  7. Characterization of electrochemically modified polycrystalline platinum surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Krebs, L.C.; Ishida, Takanobu.

    1991-12-01

    The characterization of electrochemically modified polycrystalline platinum surfaces has been accomplished through the use of four major electrochemical techniques. These were chronoamperometry, chronopotentiommetry, cyclic voltammetry, and linear sweep voltammetry. A systematic study on the under-potential deposition of several transition metals has been performed. The most interesting of these were: Ag, Cu, Cd, and Pb. It was determined, by subjecting the platinum electrode surface to a single potential scan between {minus}0.24 and +1.25 V{sub SCE} while stirring the solution, that the electrocatalytic activity would be regenerated. As a consequence of this study, a much simpler method for producing ultra high purity water from acidic permanganate has been developed. This method results in water that surpasses the water produced by pyrocatalytic distillation. It has also been seen that the wettability of polycrystalline platinum surfaces is greatly dependent on the quantity of oxide present. Oxide-free platinum is hydrophobic and gives a contact angle in the range of 55 to 62 degrees. We have also modified polycrystalline platinum surface with the electrically conducting polymer poly-{rho}-phenylene. This polymer is very stable in dilute sulfuric acid solutions, even under applied oxidative potentials. It is also highly resistant to electrochemical hydrogenation. The wettability of the polymer modified platinum surface is severely dependent on the choice of supporting electrolyte chosen for the electrochemical polymerization. Tetraethylammonium tetrafluoroborate produces a film that is as hydrophobic as Teflon, whereas tetraethylammonium perchlorate produces a film that is more hydrophilic than oxide-free platinum.

  8. Characterization of electrochemically modified polycrystalline platinum surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Krebs, Leonard C. [State Univ. of New York (SUNY), Stony Brook, NY (United States); Ishida, Takanobu [State Univ. of New York (SUNY), Stony Brook, NY (United States)

    1991-12-01

    The characterization of electrochemically modified polycrystalline platinum surfaces has been accomplished through the use of four major electrochemical techniques. These were chronoamperometry, chronopotentiommetry, cyclic voltammetry, and linear sweep voltammetry. A systematic study on the under-potential deposition of several transition metals has been performed. The most interesting of these were: Ag, Cu, Cd, and Pb. It was determined, by subjecting the platinum electrode surface to a single potential scan between -0.24 and +1.25 VSCE while stirring the solution, that the electrocatalytic activity would be regenerated. As a consequence of this study, a much simpler method for producing ultra high purity water from acidic permanganate has been developed. This method results in water that surpasses the water produced by pyrocatalytic distillation. It has also been seen that the wettability of polycrystalline platinum surfaces is greatly dependent on the quantity of oxide present. Oxide-free platinum is hydrophobic and gives a contact angle in the range of 55 to 62 degrees. We have also modified polycrystalline platinum surface with the electrically conducting polymer poly-ρ-phenylene. This polymer is very stable in dilute sulfuric acid solutions, even under applied oxidative potentials. It is also highly resistant to electrochemical hydrogenation. The wettability of the polymer modified platinum surface is severely dependent on the choice of supporting electrolyte chosen for the electrochemical polymerization. Tetraethylammonium tetrafluoroborate produces a film that is as hydrophobic as Teflon, whereas tetraethylammonium perchlorate produces a film that is more hydrophilic than oxide-free platinum.

  9. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

  10. Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

    International Nuclear Information System (INIS)

    Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru

    2007-01-01

    Cu(In,Ga)Se 2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber

  11. Synthesis, characterization and decomposition studies of tris(N,N-dibenzyldithiocarbamato)indium(III): chemical spray deposition of polycrystalline CuInS2 on copper films

    International Nuclear Information System (INIS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S'), commonly referred to as tris(N,N-dibenzyldithiocarbamato)indium(III), In(S 2 CNBz 2 ) 3 , was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1-bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry, and Fourier transform infrared (FT-IR) spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS 2 and benzyl moieties in to the gas phase, resulting in bulk In 2 S 3 . Preliminary spray CVD experiments indicate that In(S 2 CNBz 2 ) 3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS 2 films

  12. Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    Science.gov (United States)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

  13. X-ray diffraction and Moessbauer studies of structural changes and L10 ordering kinetics during annealing of polycrystalline Fe51Pt49 thin films

    International Nuclear Information System (INIS)

    Spada, F.E.; Parker, F.T.; Platt, C.L.; Howard, J.K.

    2003-01-01

    Room-temperature x-ray diffraction and Moessbauer effect techniques have been used to characterize the structural features and local atomic environments of sputtered Fe 51 Pt 49 thin films following various isothermal treatments. Both techniques show that no significant changes occur in the chemically ordered L1 0 tetragonal phase after it has formed. In contrast, changes in the disordered face-centered-cubic (fcc) phase are observed prior to the transformation into the ordered tetragonal phase. Moessbauer measurements indicate the development of increasing short-range order in the disordered fcc phase with increasing annealing temperature. Asymmetries in the fcc x-ray diffraction profiles also suggest the presence of lattice distortions caused by atomic size differences commonly found in the quenched disordered fcc phase of materials that form ordered structures. Quasi-real-time kinetic measurements of the disorder→order transformation in sputtered Fe 51 Pt 49 thin films within the temperature range 300 deg. C≤T≤400 deg. C have also been conducted using high-temperature x-ray diffraction techniques. Significant differences are observed between the kinetic parameters determined in this study and those of previous reports. It is proposed that these differences arise from the lower temperature range investigated in the present work, where the gradual changes occurring in the fcc phase can influence the rate of the ordering transformation. Furthermore, because the initial state of disorder in Fe ∼50 Pt ∼50 films can be influenced by the deposition conditions, variability in the low-temperature ordering kinetics should be expected among Fe ∼50 Pt ∼50 films prepared under different conditions

  14. Oriented thin films of Na0.6CoO2 and Ca3Co4O9 deposited by spin-coating method on polycrystalline substrate

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Soroka, Miroslav; Knížek, Karel; Hirschner, Jan; Levinský, Petr; Hejtmánek, Jiří

    2016-01-01

    Roč. 603, MAR (2016), s. 400-403 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GA14-18392S; GA ČR(CZ) GA13-03708S Institutional support: RVO:61388980 ; RVO:68378271 Keywords : Cobaltates * Thermoelectrics * NaxCoO2 * Ca3Co4O9 * Thin film s * ZrO2 Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.879, year: 2016

  15. The mechanism of persistent photoconductivity induced by minority carrier trapping effect in ultraviolet photo-detector made of polycrystalline diamond film

    International Nuclear Information System (INIS)

    Wang Lanxi; Chen Xuekang; Wu Gan; Guo Wantu; Cao Shengzhu; Shang Kaiwen; Han Weihua

    2011-01-01

    Performances of long persistent photoconductivity, high responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photo-detector fabricated on a microcrystalline diamond film. Charge-based deep level transient spectroscopy measurement confirmed that a shallow level with activation energy of 0.21 eV and capture cross section of 9.9 × 10 −20 cm 2 is presented in the band gap of the diamond film. The shallow level may not act as effective recombination center due to the so small activation energy according to Schockly-Read-Hall statistics. The persistent photoconductivity relaxation fits in with the so called “barrier-limited recombination” model, which may be a minority carrier trapping effect related recombination process. The photo-induced minority carriers (electrons in this paper) may be trapped by the shallow level during light irradiation process and then de-trap slowly via thermal excitation or tunneling effect after removing the light source, which contributes to the persistent photoconductivity. The trapping effect can also reduce the probability of carrier recombination, resulting in the high responsivity and the high gain.

  16. How the Starting Precursor Influences the Properties of Polycrystalline CuInGaSe2 Thin Films Prepared by Sputtering and Selenization

    Directory of Open Access Journals (Sweden)

    Greta Rosa

    2016-05-01

    Full Text Available Cu(In,GaSe2 (CIGS/CdS thin-film solar cells have reached, at laboratory scale, an efficiency higher than 22.3%, which is one of the highest efficiencies ever obtained for thin-film solar cells. The research focus has now shifted onto fabrication processes, which have to be easily scalable at an industrial level. For this reason, a process is highlighted here which uses only the sputtering technique for both the absorber preparation and the deposition of all the other materials that make up the cell. Particular emphasis is placed on the comparison between different precursors obtained with either In2Se3 and Ga2Se3 or InSe and GaSe as starting materials. In both cases, the precursor does not require any heat treatment, and it is immediately ready to be selenized. The selenization is performed in a pure-selenium atmosphere and only lasts a few minutes at a temperature of about 803 K. Energy conversion efficiencies in the range of 15%–16% are reproducibly obtained on soda-lime glass (SLG substrates. Similar results are achieved if commercial ceramic tiles are used as a substrate instead of glass. This result is especially useful for the so-called building integrated photovoltaic. Cu(In,GaSe2-based solar cells grown directly on ceramic tiles are ideal for the fabrication of ventilated façades in low impact buildings.

  17. Anelasticity of polycrystalline indium

    Energy Technology Data Exchange (ETDEWEB)

    Sapozhnikov, K., E-mail: k.sapozhnikov@mail.ioffe.ru [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Golyandin, S. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Kustov, S. [Dept. de Fisica, Universitat de les Illes Balears, Cra Valldemossa km 7.5, E 07122 Palma de Mallorca (Spain)

    2009-09-15

    Mechanisms of anelasticity of polycrystalline indium have been studied over wide ranges of temperature (7-320 K) and strain amplitude (2 x 10{sup -7}-3.5 x 10{sup -4}). Measurements of the internal friction and Young's modulus have been performed by means of the piezoelectric resonant composite oscillator technique using longitudinal oscillations at frequencies of about 100 kHz. The stages of the strain amplitude dependence of the internal friction and Young's modulus defect, which can be attributed to dislocation - point defect and dislocation - dislocation interactions, have been revealed. It has been shown that thermal cycling gives rise to microplastic straining of polycrystalline indium due to the anisotropy of thermal expansion and to appearance of a 'recrystallization' internal friction maximum in the temperature spectra of amplitude-dependent anelasticity. The temperature range characterized by formation of Cottrell's atmospheres of point defects around dislocations has been determined from the acoustic data.

  18. Polycrystalline Thin-Film Cadmium Telluride Solar Cells Fabricated by Electrodeposition; Final Technical Report, 20 March 1995-15 June 1998

    Energy Technology Data Exchange (ETDEWEB)

    Trefny, J. U.; Mao, D.; Kaydanov, V.; Ohno, T. R.; Williamson, D. L.; Collins, R.; Furtak, T. E.

    1999-01-27

    This report summarizes work performed by the Colorado School of Mines Department of Physics under this subcontract. Based on the studies conducted, researchers increased the efficiency of the cells with electrodeposited CdTe and CBD CdS by 3% on average ({approx}30 relative %). The improvement came from 1. Optimization of CdS initial thickness taking into account CdS consumption of CdTe during the CdTe/CdS post-deposition treatment; optimization of CdS post-deposition treatment with CdCl2 aimed at prevention of Te diffusion into CdS and improvement of the CdS film morphology and electronic properties. That led to a considerable increase in short circuit current, by 13% on average. 2. Optimization of CdTe thickness and post-deposition treatment which led to a significant increase in Voc, by {approx}70 mV. The highest Voc obtained exceeded 800 mV. 3. Development of a ZnTe:Cu/Metal back contact processing procedure that included selection of optimal Cu content, deposition regime and post-deposition treatment conditions. As a result, back contact resistance as low as 0.1W-cm2 was obtained. The cell stability was measured on exposure to accelerated stress conditions. Preliminary studies of some new approaches to improvement of CdS/CdTe structure were conducted.

  19. Deposition of polycrystalline Cd{sub 1-x}Zn{sub x} Te films on ZnTe/graphite and graphite substrates by close-spaced sublimation

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Tamotsu; Akiba, Sho; Takahashi, Kohei; Nagatsuka, Satsuki; Kanda, Yohei [Department of Electrical and Electronic Engineering, Kisarazu National College of Technology, 2-11-1 Kiyomidai-higashi, Kisarazu, Chiba 292-0041 (Japan); Tokuda, Satoshi; Kishihara, Hiroyuki; Sato, Toshiyuki [Technology Research Laboratory, Shimadzu Corporation, 3-9-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237 (Japan)

    2014-07-15

    The effects of a ZnTe layer on the deposition of a Cd{sub 1-x}Zn{sub x}Te (CZT) layer in the initial stage of the close-spaced sublimation (CSS) deposition were investigated. The deposition rate was almost constant in the initial stage of the CdTe deposition on the ZnTe/graphite substrates. However, the deposition rate within 1 minute was lower than that after 1 minute in the CdTe deposition on graphite substrates. This result suggests that nucleation of CdTe directly deposited on graphite substrate is difficult when compared to that with a ZnTe layer. Furthermore, the effects of CdCl{sub 2} and ZnTe additions to the CdTe sources in the CSS deposition were also investigated. Both the grain size and the intensity of donor-acceptor pair (DAP) emission in photoluminescence (PL) spectra were decreased by the effect of CdCl{sub 2} addition. Zn content in CZT films was controlled by the ZnTe ratio in the CdTe/ZnTe powder sources. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Research on polycrystalline thin-film submodules based on CuInSe{sub 2} materials. Final subcontract report, 11 November 1990--30 June 1995

    Energy Technology Data Exchange (ETDEWEB)

    Arya, R; Fogleboch, J; Kessler, J; Russell, L; Skibo, S; Wiedeman, S [Solarex Corp., Newtown, PA (United States)

    1996-01-01

    This report describes work performed in development of CIS-based photovoltaic (PV) products. The activity began with developing manufacturable deposition methods for all required thin-film layers and developing and understanding processes using those methods. It included demonstrating the potential for high conversion efficiency and followed with developing viable methods for module segment formation and interconnection. These process steps were integrated to fabricate monolithic CIS-based submodules. An important result of this program is the basis of understanding established in developing this material for PV applications, which is necessary to address issues of manufacturability and cost-which were recognized early in the program as being determined by successful solutions to issues of yield, reproducibility, and control as much as by material and energy costs, conversion efficiency, and process speed. Solarex identified at least one absorber formation process that is very robust to shunt formation from pinholes or point defects, tolerant of variation in processing temperature and elemental composition, and is capable of producing high conversion efficiency. This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribing/module formation operations to 1000-CM{sup 2} size. At the completion of this program, Solarex has in place most of the necessary elements to begin the transition to pilot operation of CIS manufacturing activities.

  1. Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell / low-cost and large-area module / next-generation thin-film solar cell (Manufacture of thin-film polycrystalline solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Fiscal 1997 is the first year of another 4-year-long research and development phase. In addition to researches for improving on thin-film polycrystalline Si cell efficiency that have been under way, new efforts are started, which include the development of practicality-conscious thin film producing technologies aiming at higher throughput and yield and the development of modularization process technologies which are necessary for putting thin-film cells to practical use. Concerning the formation of a power generation layer on a polycrystalline Si thin film formed by the ZMR (zone-melting recrystallization) process, studies are conducted for improvement on its throughput and yield using a new CVD (chemical vapor deposition) unit. A method of modularization is evaluated, which involves a laminate of a thin-film cell attached to a resin-coated, reinforced glass substrate and an EVA (ethylene vinyl acetate) back film. A remarkable achievement is earned toward the practicalization of technologies of thin film formation enhanced in quality and throughput and technologies of thin film modularization. (NEDO)

  2. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

  3. Optical and electrical characterization of AgInS{sub 2} thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Calixto, M.E. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Postal J-48, 72570, Puebla, Puebla (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Martinez-Escobar, Dalia [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Tiburcio-Silver, A. [Instituto Tecnologico de Toluca-SEP, Apartado Postal 20, 52176, Metepec 3, Estado de Mexico (Mexico); Sanchez-Juarez, A. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico)

    2010-10-25

    Silver indium sulfide (AgInS{sub 2}) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T{sub s}) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS{sub 2} thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS{sub 2}, Ag{sub 2}S, In{sub 2}O{sub 3}, and In{sub 2}S{sub 3} can be grown only by changing the Ag:In:S ratio in the starting solution and T{sub s}. So that, by carefully selecting the deposition parameters, single phase AgInS{sub 2} thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T{sub s} = 400 {sup o}C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 {Omega}{sup -1} cm{sup -1} in the dark.

  4. Gelcasting polycrystalline alumina

    Energy Technology Data Exchange (ETDEWEB)

    Janney, M.A. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This work is being done as part of a CRADA with Osram-Sylvania, Inc. (OSI) OSI is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux{reg_sign} line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency (95% total transmittance in the visible region), their refractoriness (inner wall temperature can reach 1400{degrees}C), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, on the order of several hundred lumens / watt. (Compare - incandescent lamps -13 lumens/watt fluorescent lamps -30 lumens/watt.) Osram-Sylvania would like to explore using gelcasting to form PCA tubes for Lumalux{reg_sign} lamps, and eventually for metal halide lamps (known as quartz-halogen lamps). Osram-Sylvania, Inc. currently manufactures PCA tubes by isostatic pressing. This process works well for the shapes that they presently use. However, there are several types of tubes that are either difficult or impossible to make by isostatic pressing. It is the desire to make these new shapes and sizes of tubes that has prompted Osram-Sylvania`s interest in gelcasting. The purpose of the CRADA is to determine the feasibility of making PCA items having sufficient optical quality that they are useful in lighting applications using gelcasting.

  5. Thin-film polycrystalline silicon solar cells

    Science.gov (United States)

    Funghnan, B. W.; Blanc, J.; Phillips, W.; Redfield, D.

    1980-08-01

    Thirty-four new solar cells were fabricated on Wacker Sislo substrates and the AM-1 parameters were measured. A detailed comparison was made between the measurement of minority carrier diffusion length by the OE method and the penetrating light laser scan grain boundary photoresponse linewidth method. The laser scan method has more experimental uncertainty and agrees within 10 to 50% with the QE method. It allows determination of L over a large area. Atomic hydrogen passivation studies continued on Wacker material by three techniques. A method of determining surface recombination velocity, s, from laser scan data was developed. No change in s in completed solar cells after H-plasma treatment was observed within experimental error. H-passivation of bare silicon cars as measured by the new laser scan photoconductivity technique showed very large effects.

  6. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  7. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique; Etude et realisation de detecteurs de rayonnements a base de films de diamant polycristallin elabores par depot chimique en phase vapeur assiste par plasma micro-onde

    Energy Technology Data Exchange (ETDEWEB)

    Jany, Ch

    1998-10-29

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead {eta} to decrease. In contrast, {eta} was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp{sup 2} phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  8. Synthesis and characterization of silicon-doped polycrystalline GaN ...

    Indian Academy of Sciences (India)

    Silicon-doped polycrystalline GaN films were successfully deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 Pa. The films were characterized by optical as well as microstructural measurements. The optical ...

  9. Physics of grain boundaries in polycrystalline photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Yanfa, E-mail: yanfa.yan@utoledo.edu; Yin, Wan-Jian; Wu, Yelong; Shi, Tingting; Paudel, Naba R. [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); Li, Chen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Poplawsky, Jonathan [The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Wang, Zhiwei [Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Ohio 43606 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Moseley, John; Guthrey, Harvey; Moutinho, Helio; Al-Jassim, Mowafak M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Pennycook, Stephen J. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)

    2015-03-21

    Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

  10. A simple solution-phase approach to synthesize high quality ternary AgInSe2 and band gap tunable quaternary AgIn(S1-xSe x)2 nanocrystals

    KAUST Repository

    Bai, Tianyu; Li, Chunguang; Li, Feifei; Zhao, Lan; Wang, Zhaorui; Huang, He; Chen, Cailing; Han, Yu; Shi, Zhan; Feng, Shouhua

    2014-01-01

    in detail and different reaction conditions all have a great impact on the growth and morphology of the nanocrystals. Alloyed AgIn(S1-xSex)2 nanocrystals with controlled composition across the entire range (0 ≤ x ≤ 1) was also successfully prepared

  11. Diffraction by disordered polycrystalline fibers

    International Nuclear Information System (INIS)

    Stroud, W.J.; Millane, R.P.

    1995-01-01

    X-ray diffraction patterns from some polycrystalline fibers show that the constituent microcrystallites are disordered. The relationship between the crystal structure and the diffracted intensities is then quite complicated and depends on the precise kind and degree of disorder present. The effects of disorder on diffracted intensities must be included in structure determinations using diffraction data from such specimens. Theory and algorithms are developed here that allow the full diffraction pattern to be calculated for a disordered polycrystalline fiber made up of helical molecules. The model accommodates various kinds of disorder and includes the effects of finite crystallite size and cylindrical averaging of the diffracted intensities from a fiber. Simulations using these methods show how different kinds, or components, of disorder produce particular diffraction effects. General properties of disordered arrays of helical molecules and their effects on diffraction patterns are described. Implications for structure determination are discussed. (orig.)

  12. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of application type novel-structure thin-film solar cell manufacturing technology - Development of amorphous silicon/thin-film polycrystalline silicon hybrid thin-film solar cell manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu / amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The project aims to manufacture the above for the development of low-cost high-efficiency practical cells. Technologies were developed to homogeneously fabricate films with an average efficiency of 10% or more in a 100mm times 85mm area in a STAR (naturally surface texture and enhanced absorption with a back reflector) structure thin-film polycrystalline silicon (poly-Si) solar cell. The texture shape was improved for a higher light trapping effect and a STAR structure cell highly sensitive to long wavelengths and fit for use for a hybrid cell bottom layer was obtained. Various cells were examined for temperature characteristics, and it was found that thin-film poly-Si cells present a temperature coefficient equal to or less than that of bulk single-crystal silicon systems, and hybrid cells a temperature coefficient similar to that of a-Si systems. The technology was applied to a hybrid solar cell in which an a-Si cell was placed on STAR structure thin film poly-Si cells, and a resultant 3-layer a-Si/poly-Si/poly-Si cell exhibited a stabilization factor of 12.0% after 550 hours of optical irradiation. (NEDO)

  13. Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost large-area module manufacturing technology - Development of next-generation thin-film solar cell manufacturing technology - Development of thin-film polycrystalline solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu / jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The aim is to realize the practical application of the above-named solar module expected to exhibit higher efficiency and reliability and achieve cost reduction through consumption of less materials. In fiscal 1998, 1) technologies were developed to reduce substrate warpage during recrystallization for the higher-throughput fabrication of high-quality thin films and 2) technologies were also developed for the realization of higher-throughput fabrication of thin films and for efficiency improvement for thin-film modules. Under item 1), experiments were conducted by simulation for reducing warpage to occur in thin-film polycrystalline Si substrates during fabrication by melting and recrystallization. Under item 2), for the development of thin-film cell high-throughput technologies, studies were started on a more practical hydrogen plasma process to challenge the conventional process of crystal defect inactivation by hydrogen ion injection with which achievement of high throughputs is difficult. For the development of technologies for the enhancement of thin-film module efficiency, efforts were exerted to realize a 10cm times 10cm square shape for the enhancement of efficiency in the process of filling modules with cells. These efforts achieved a great step toward future practical application. (NEDO)

  14. Scanning Tunneling Spectroscopy on polycrystalline Cu(In,Ga)(S,Se){sub 2} thin-film solar cells; Rastertunnelspektroskopie an polykristallinen Cu(In,Ga)(S,Se){sub 2}-Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Herber, U.

    2006-12-21

    In case of the investigated multinary Cu(In;Ga)Se{sub 2} system with its polycrystalline structure, the question for the lateral homogeneity of its electronic properties arises. By means of the here presented method, a photo-assisted tunneling spectroscopy, such lateral inhomogeneities of the Surface Photo Voltage (SPV) and the Photo-Induced Tunneling Current (PITC) are to be detected. Modulations of the bias voltage and/or the illumination intensity have been applied to a greater number of materials in tunneling spectroscopy. Within these field, disturbing current contributions, coupled via the tip-sample-capacitance, is a known problem. Electronic compensation by using an appropriate compensating circuit is a possible solution. As will be shown in this work, such procedure is very adequate to compensate stray signals generated by bias modulation. After the introduction and careful analysis of our technique in the first part the second part of the thesis deals with its application to a series of different CIGS samples. What becomes apparent is the aforementioned inhomogeneities in PITC signal to be an immanent property of these polycrystalline semiconductor systems. Besides lateral variations in the photocurrent amplitude, also inhomogeneities within its complex phase can be demonstrated. As becomes clear, it is impossible to draw conclusions about the participating capacity of the depletion region because of the dominating admittance of the tunneling junction. However, it is possible to gain a statistical distribution of the PITC by investigating a large number of positions on the sample. For small numbers of weak diodes, the distribution exhibits a distinct maximum at higher photocurrents. Metastable effects are observed by tracking PITC values over a longer period of time. (orig.)

  15. Acoustic emission from polycrystalline graphites

    International Nuclear Information System (INIS)

    Ioka, I.; Yoda, S.; Oku, T.; Miyamoto, Y.

    1987-01-01

    Acoustic emission was monitored from polycrystalline graphites with different microstructure (pore size and pore volume) subjected to compressive loading. The graphites used in this study comprised five brands, that is, PGX, ISEM-1, IG-11, IG-15, and ISO-88. A root mean square (RMS) voltage and event counts of acoustic emission for graphites were measured during compressive loading. The acoustic emission was measured using a computed-based data acquisition and analysis system. The graphites were first deformed up to 80 % of the average fracture stress, then unloaded and reloaded again until the fracture occured. During the first loading, the change in RMS voltage for acoustic emission was detected from the initial stage. During the unloading, the RMS voltage became zero level as soon as the applied stress was released and then gradually rose to a peak and declined. The behavior indicated that the reversed plastic deformation occured in graphites. During the second loading, the RMS voltage gently increased until the applied stress exceeded the maximum stress of the first loading; there is no Kaiser effect in the graphites. A bicrystal model could give a reasonable explanation of this results. The empirical equation between the ratio of σ AE to σ f and σ f was obtained. It is considered that the detection of microfracture by the acoustic emission technique is effective in macrofracture prediction of polycrystalline graphites. (author)

  16. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    Science.gov (United States)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  17. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, next generation thin film solar cell module manufacturing technologies, development of thin film poly-crystalline solar cell module manufacturing technologies); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo gijutsu kaihatsu (jisedai usumaku taiyo denchi no seizo gijutsu kaihatsu (usumaku takessho taiyo denchi module no seizo gijutsu kaihatsu)))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Research and development has been performed on a high throughput forming technology and a modularization technology for thin film poly-crystalline solar cell modules. This paper summarizes the achievements in fiscal 1999. In developing the high throughput forming technology for a high-quality thin film, research has been made on a low-cost VEST process to re-utilize substrates by separating the thin film from the substrate. In the melting re-crystallization process, it was discovered that plasticity deformation of the substrate can be reduced greatly by raising the substrate heating temperatures. It was also found out that substrate warping amount can be reduced to about one-fifth of the conventional amount by making the thickness greater than 1.5 mm and raising the heating temperatures higher than 1300 degree C. In developing the thin film modularization technology, it was indicated that the property improving effect remains the same even if the hydrogen passivation method is changed from the hydrogen ion injection to the hydrogen plasma processing. In the trial fabrication of the thin film modules, a conversion efficiency of 13.1% was achieved in nine-cell structured modules. (NEDO)

  18. Process Research on Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.; Wrigley, C. Y.

    1985-01-01

    Results of hydrogen-passivated polycrysalline silicon solar cell research are summarized. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystalline silicon solar cells.

  19. A simple solution-phase approach to synthesize high quality ternary AgInSe2 and band gap tunable quaternary AgIn(S1-xSe x)2 nanocrystals

    KAUST Repository

    Bai, Tianyu

    2014-01-01

    A facile solution-phase route for the preparation of AgInSe2 nanocrystals was developed by using silver nitrate, indium stearate, and oleylamine-selenium (OAm-Se) as precursors. The evolution process of the AgInSe2 nanocrystals is discussed in detail and different reaction conditions all have a great impact on the growth and morphology of the nanocrystals. Alloyed AgIn(S1-xSex)2 nanocrystals with controlled composition across the entire range (0 ≤ x ≤ 1) was also successfully prepared by modulating the S/Se reactant mole ratio. X-ray diffraction (XRD), energy dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were used to confirm that the alloyed AgIn(S1-xSex)2 nanocrystals are homogeneous. The UV-vis absorption spectra revealed that the band gap energies of the alloyed AgIn(S1-xSex)2 nanocrystals could be continuously tuned by increasing the Se content. © The Royal Society of Chemistry 2014.

  20. Polycrystalline Silicon: a Biocompatibility Assay

    International Nuclear Information System (INIS)

    Pecheva, E.; Fingarova, D.; Pramatarova, L.; Hikov, T.; Laquerriere, P.; Bouthors, Sylvie; Dimova-Malinovska, D.; Montgomery, P.

    2010-01-01

    Polycrystalline silicon (poly-Si) layers were functionalized through the growth of biomimetic hydroxyapatite (HA) on their surface. HA is the mineral component of bones and teeth and thus possesses excellent bioactivity and biocompatibility. MG-63 osteoblast-like cells were cultured on both HA-coated and un-coated poly-Si surfaces for 1, 3, 5 and 7 days and toxicity, proliferation and cell morphology were investigated. The results revealed that the poly-Si layers were bioactive and compatible with the osteoblast-like cells. Nevertheless, the HA coating improved the cell interactions with the poly-Si surfaces based on the cell affinity to the specific chemical composition of the bone-like HA and/or to the higher HA roughness.

  1. Elaboration and characterisation of thin polycrystalline films deposited by LPCVD for solar cells application; Elaboration et caracterisation de couches minces de silicium polycristallin deposees par LPCVD pour application photovoltaique

    Energy Technology Data Exchange (ETDEWEB)

    Laghla, Y.

    1998-07-16

    This work is separated in 3 parts: a first part told horizontal research, concerning physical studies of the material such as optical characteristics. We have studied the main methods of evaluating optical constants, such as thickness, refractive index and optical coefficient of absorption. The second part is dedicated to calculation of optical properties of thin layers of amorphous and polycrystalline silicon obtained by low pressure chemical vapour deposition (LPCVD). The optical studies of the different materials have allowed us to the final choice of material and to optimise thickness in order to make photovoltaic diodes. Therefore we have, studied the deposit kinetics, optical, electrical, and structural (AFM, SEM) properties of the different layers contributing to the diodes manufacturing. So as to better understand the quality of these layers, we have tried to make a bond between the different observed variation of electrical, and optical parameters, and their structural variation according to their thickness. The lest part, told vertical research, consists in the technological realisation of these diodes with minimum technological steps (only three masc. levels), so as to reply to the demands of the industrial market. In this subject, we have realised diodes with a significant reduction in reverse leakage current, and a very good aware appearance to reverse polarisation up to -100 V without observing the break down voltage. (author) 186 refs.

  2. Visible and ultraviolet emission from pulse irradiated amorphous and polycrystalline H2O ice

    International Nuclear Information System (INIS)

    Freeman, C.G.; Quickenden, T.I.; Litjens, R.A.J.; Sangster, D.F.

    1984-01-01

    Luminescence peaking at 405 nm was observed when thin films of amorphous or polycrystalline ice at 97 K were irradiated with a pulsed beam of 0.53 MeV electrons. These emissions differed from the luminescence emitted by crystalline ice in that memory effects were not observed; the peak wavelengths were red shifted by approx.20 nm; and the half-lives were 6--9 ns instead of approx.400 ns. The emission spectra of polycrystalline ice samples produced by rapid deposition or by annealing amorphous ice were similar, but both had substantially lower intensities than amorphous ice spectra

  3. X-ray stress analysis in textured polycrystalline materials

    International Nuclear Information System (INIS)

    Yokoyama, Ryouichi; Harada, Jimpei

    2010-01-01

    The relationship between stress and strain in polycrystalline materials with fibre texture is examined on the basis of the strain analysis in the constituent crystallites within the Reuss approximation. By introducing the symmetry of reciprocal lattices for the constituent crystallites, the physical meaning of taking an average of the strains observed by X-ray diffraction (XRD) is made clear. By using formulae obtained by the present treatment for the stress-strain relation in cubic specimens with fibre texture in the Laue classes m3-bar m hkl Bragg reflections with h≠k≠l split into doublets owing to the existence of crystallites with two different orientations under the stress field. This technique was confirmed by the profile analysis in XRD data observed for reflections of 222 and 420 in a cubic TiN thin film sputtered on a polyimide film. The technique of the stress analysis and its confirmation are introduced. (author)

  4. High vacuum tribology of polycrystalline diamond coatings

    Indian Academy of Sciences (India)

    Polycrystalline diamond coatings; hot filament CVD; high vacuum tribology. 1. Introduction .... is a characteristic of graphite. We mark the (diamond ... coefficient of friction due to changes in substrate temperature. The average coefficient of.

  5. Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

    International Nuclear Information System (INIS)

    Pimentel, A.; Fortunato, E.; Goncalves, A.; Marques, A.; Aguas, H.; Pereira, L.; Ferreira, I.; Martins, R.

    2005-01-01

    In this paper we present results of intrinsic/non-doped zinc oxide deposited at room temperature by radio frequency magnetron sputtering able to be used as a semiconductor material on electronic devices, like for example ozone gas sensors, ultra-violet detectors and thin film transistors. These films present a resistivity as high as 2.5x10 8 Ω cm with an optical transmittance of 90%. Concerning the structural properties, these films are polycrystalline presenting a uniform and very smooth surface

  6. Study on the Cross Plane Thermal Transport of Polycrystalline Molybdenum Nanofilms by Applying Picosecond Laser Transient Thermoreflectance Method

    Directory of Open Access Journals (Sweden)

    Tingting Miao

    2014-01-01

    Full Text Available Thin metal films are widely used as interconnecting wires and coatings in electronic devices and optical components. Reliable thermophysical properties of the films are required from the viewpoint of thermal management. The cross plane thermal transport of four polycrystalline molybdenum nanofilms with different thickness deposited on glass substrates has been studied by applying the picosecond laser transient thermoreflectance technique. The measurement is performed by applying both front pump-front probe and rear pump-front probe configurations with high quality signal. The determined cross plane thermal diffusivity of the Mo films greatly decreases compared to the corresponding bulk value and tends to increase as films become thicker, exhibiting significant size effect. The main mechanism responsible for the thermal diffusivity decrease of the present polycrystalline Mo nanofilms is the grain boundary scattering on the free electrons. Comparing the cross plane thermal diffusivity and inplane electrical conductivity indicates the anisotropy of the transport properties of the Mo films.

  7. Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

    2014-07-15

    Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Multiwavelength excitation Raman scattering of Cu2ZnSn(SxSe1−x)4 (0 ≤ x ≤ 1) polycrystalline thin films: Vibrational properties of sulfoselenide solid solutions

    International Nuclear Information System (INIS)

    Dimitrievska, Mirjana; Xie, Haibing; Fairbrother, Andrew; Fontané, Xavier; Saucedo, Edgardo; Izquierdo-Roca, Victor; Gurieva, Galina; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain))" data-affiliation=" (Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain))" >Pérez-Rodríguez, Alejandro; Schorr, Susan

    2014-01-01

    In this work, Raman spectroscopy and X-ray diffraction were applied together to evaluate the crystal structure and the phonon modes of photovoltaic grade Cu 2 ZnSn(S x Se 1−x ) 4 thin films, leading to a complete characterization of their structural and vibrational properties. Vibrational characterization has been based on Raman scattering measurements performed with different excitation wavelengths and polarization configurations. Analysis of the experimental spectra has permitted identification of 19 peaks, which positions are in good accord with theoretical predictions. Besides, the observation of Cu 2 ZnSnS 4 -like A symmetry peaks related to S vibrations and Cu 2 ZnSnSe 4 -like A symmetry peaks related to Se vibrations, additional Raman peaks, characteristic of the solid solution and previously not reported, are observed, and are attributed to vibrations involving both S and Se anions.

  9. Polycrystalline oxides formation during transient oxidation of (001) Cu-Ni binary alloys studied by in situ TEM and XRD

    International Nuclear Information System (INIS)

    Yang, J.C.; Li, Z.Q.; Sun, L.; Zhou, G.W.; Eastman, J.A.; Fong, D.D.; Fuoss, P.H.; Baldo, P.M.; Rehn, L.E.; Thompson, L.J.

    2009-01-01

    The nucleation and growth of Cu 2 O and NiO islands due to oxidation of Cu x Ni 1-x (001) films were monitored, at various temperatures, by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM) and in situ synchrotron X-ray diffraction (XRD). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands formed with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. In situ XRD experiments revealed that NiO formed first epitaxially, then other orientations appeared, and finally polycrystalline Cu 2 O developed as the oxidation pressure was increased. The segregation of Ni and Cu towards or away, respectively, from the alloy surface during oxidation could disrupt the surface and cause polycrystalline oxide formation.

  10. Phase-Field Modeling of Polycrystalline Solidification: From Needle Crystals to Spherulites—A Review

    Science.gov (United States)

    Gránásy, László; Rátkai, László; Szállás, Attila; Korbuly, Bálint; Tóth, Gyula I.; Környei, László; Pusztai, Tamás

    2014-04-01

    Advances in the orientation-field-based phase-field (PF) models made in the past are reviewed. The models applied incorporate homogeneous and heterogeneous nucleation of growth centers and several mechanisms to form new grains at the perimeter of growing crystals, a phenomenon termed growth front nucleation. Examples for PF modeling of such complex polycrystalline structures are shown as impinging symmetric dendrites, polycrystalline growth forms (ranging from disordered dendrites to spherulitic patterns), and various eutectic structures, including spiraling two-phase dendrites. Simulations exploring possible control of solidification patterns in thin films via external fields, confined geometry, particle additives, scratching/piercing the films, etc. are also displayed. Advantages, problems, and possible solutions associated with quantitative PF simulations are discussed briefly.

  11. Polycrystalline CdTe solar cells on elastic substrates

    International Nuclear Information System (INIS)

    Sibinski, M.; Lisik, Z.

    2007-01-01

    The presented article is a report on progress in photovoltaic devices and material processing. A cadmium telluride solar cell as one of the most attractive option for thin-film polycrystalline cell constructions is presented. All typical manufacturing steps of this device, including recrystallisation and junction activation are explained. A new potential field of application for this kind of device - the BIPV (Building Integrated Photovoltaic) is named and discussed. All possible configuration options for this application, according to material properties and exploitation demands are considered. The experimental part of the presented paper is focused on practical implementation of the high - temperature polymer foil as the substrate of the newly designed device by the help of ICSVT (Isothermal Close Space Vapour Transport) technique. The evaluation of the polyester and polyamide foils according to the ICSVT/CSS manufacturing process parameters is described and discussed. A final conclusion on practical verification of these materials is also given. (authors)

  12. Physically-based modelling of polycrystalline semiconductor devices

    International Nuclear Information System (INIS)

    Lee, S.

    2000-01-01

    Thin-film technology using polycrystalline semiconductors has been widely applied to active-matrix-addressed liquid crystal displays (AMLCDs) where thin-film transistors act as digital pixel switches. Research and development is in progress to integrate the driver circuits around the peripheral of the display, resulting in significant cost reduction of connections between rows and columns and the peripheral circuitry. For this latter application, where for instance it is important to control the greyscale voltage level delivered to the pixel, an understanding of device behaviour is required so that models can be developed for analogue circuit simulation. For this purpose, various analytical models have been developed based on that of Seto who considered the effect of monoenergetic trap states and grain boundaries in polycrystalline materials but not the contribution of the grains to the electrical properties. The principal aim of this thesis is to describe the use of a numerical device simulator (ATLAS) as a tool to investigate the physics of the trapping process involved in the device operation, which additionally takes into account the effect of multienergetic trapping levels and the contribution of the grain into the modelling. A study of the conventional analytical models is presented, and an alternative approach is introduced which takes into account the grain regions to enhance the accuracy of the analytical modelling. A physically-based discrete-grain-boundary model and characterisation method are introduced to study the effects of the multienergetic trap states on the electrical characteristics of poly-TFTs using CdSe devices as the experimental example, and the electrical parameters such as the density distribution of the trapping states are extracted. The results show excellent agreement between the simulation and experimental data. The limitations of this proposed physical model are also studied and discussed. (author)

  13. Resistivity and morphology of TiSi2 formed on Xe+-implanted polycrystalline silicon

    International Nuclear Information System (INIS)

    Kuwano, H.; Phillips, J.R.; Mayer, J.W.

    1990-01-01

    Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe + ions into 500-nm-thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x-ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi 2 resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe-implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low-resistivity equilibrium C54 phase of TiSi 2 . X-ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low-temperature annealing (650 degree C, 30 min) of 6x10 16 cm -2 , 240 keV Xe + -implanted samples yielded low-resistivity (∼22 μΩ cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725 degree C, 30 min annealing for 2x10 15 cm -2 , 60 keV Xe + preimplantation

  14. Extremal Overall Elastic Response of Polycrystalline Materials

    DEFF Research Database (Denmark)

    Bendsøe, Martin P; Lipton, Robert

    1997-01-01

    Polycrystalline materials comprised of grains obtained from a single anisotropic material are considered in the framework of linear elasticity. No assumptions on the symmetry of the polycrystal are made. We subject the material to independent external strain and stress fields with prescribed mean...

  15. Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

    Science.gov (United States)

    Gonzalez, Franklin N.; Neugroschel, Arnost

    1984-02-14

    A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

  16. Compound polycrystalline solar cells. Recent progress and Y2K perspective

    Energy Technology Data Exchange (ETDEWEB)

    Birkmire, R.W. [Institute of Energy Conversion, University of Delaware, DE 19716 Newark (United States)

    2001-01-01

    A historical perspective on the development of polycrystalline thin-film solar cells based on CdTe and CuInSe{sub 2} is presented, and recent progress of these thin-film technologies is discussed. Impressive improvements in the efficiency of laboratory scale devices has not been easy to translate to the manufacturing environment, principally due to our lack of understanding of the basic science and engineering of these materials and devices. 'Next-generation' high-performance thin-film solar cells utilizing multijunction device configurations should achieve efficiencies of more than 25% within ten years. However, our cost-effective manufacturing of these more complex devices will be problematic unless the science and engineering issues associated with processing of thin-film PV devices are addressed.

  17. Preparation and characterization of polycrystalline n-CdSe photoelectrode

    Energy Technology Data Exchange (ETDEWEB)

    Bandyopadhyay, T. K.

    1979-01-01

    Thin layers of polycrystalline p-CdSe were prepared by the simultaneous eletrodeposition of cadmium and selenium from cadmium sulfate and selenious acid in a sulfuric acid solution at pH 0-1 on a titanium substrate. The adherence of the layers to the substrate, stoichiometric ratio of Cd:Se and photovoltaic property of the film depend upon the molar ratio of CdSO/sub 4/ and H/sub 2/SeO/sub 3/ and current density as well as on the pH and temperature of the electrolysis bath. On increasing the current density or the ratio of CdSO/sub 4/:H/sub 2/SeO/sub 3/ in the electrolysis bath, the Cd:Se of the electrodeposit increased. The semiconductor films so prepared were annealed at 550/sup 0/C in a nitrogen atmosphere, followed by etching in an acid solution and then used to construct the photo-electrochemical cell, Ti/CdSe/Na/sub 2/S-Na/sub 2/S/sub x/(aq.)/Pt, and the current-voltage curves have been studied. 11 references.

  18. Equilibrium shapes of polycrystalline silicon nanodots

    Energy Technology Data Exchange (ETDEWEB)

    Korzec, M. D., E-mail: korzec@math.tu-berlin.de; Wagner, B., E-mail: bwagner@math.tu-berlin.de [Department of Mathematics, Technische Universität Berlin, Straße des 17. Juni 136, 10623 Berlin (Germany); Roczen, M., E-mail: maurizio.roczen@physik.hu-berlin.de [Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany); Schade, M., E-mail: martin.schade@physik.uni-halle.de [Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Straße 3, 06120 Halle (Germany); Rech, B., E-mail: bernd.rech@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany)

    2014-02-21

    This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a “dewetting” process of an amorphous Si (a-Si) layer from a SiO{sub 2} coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support “partial wetting” and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots.

  19. Obtaining of polycrystalline silicon for semiconductor industry

    International Nuclear Information System (INIS)

    Mukashev, F.; Nauryzbaev, M.; Kolesnikov, B.; Ivanov, Y.

    1996-01-01

    The purpose of the project is to create pilot equipment and optimize the process of obtaining polycrystalline silicon on semi-industrial level. In the past several decades, the historical experience in the developing countries has shown that one of the most promising ways to improve the economy,of a country is to establish semiconductor industry. First of all, the results can help increase defense, national security and create industrial production. The silane method, which has been traditionally' used for obtaining technical and polycrystalline silicon, is to obtain and then to pyrolyzed mono-and poly silanes. Although the traditional methods of obtaining silicon hydrides have specific advantages, such as utilizing by-products, they also have clear shortcomings, i.e. either low output of the ultimate product ( through hydrolysis of Mg 2 Si) or high contents of by-products in it or high contents of dissolving vapors (through decomposing Mg 2 Si in non-water solutions)

  20. Method for producing polycrystalline boron nitride

    International Nuclear Information System (INIS)

    Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

    1975-01-01

    A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

  1. Effective polycrystalline sensor of ultraviolet radiation

    Directory of Open Access Journals (Sweden)

    S.Yu. Pavelets

    2017-10-01

    Full Text Available Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.

  2. Extremal Overall Elastic Response of Polycrystalline Materials

    DEFF Research Database (Denmark)

    Bendsøe, Martin P; Lipton, Robert

    1996-01-01

    Polycrystalline materials comprised of grains obtained froma single anisotropic material are considered in the frameworkof linear elasticity. No assumptions on the symmetry of thepolycrystal are made. We subject the material to independentexternal strain and stress fields with prescribed mean...... values.We show that the extremal overall elastic response is alwaysachieved by a configuration consisting of a single properlyoriented crystal. This result is compared to results for isotropicpolycrystals....

  3. Hydrogen solubility in polycrystalline - and nonocrystalline niobium

    International Nuclear Information System (INIS)

    Ishikawa, T.T.; Silva, J.R.G. da

    1981-01-01

    Hydrogen solubility in polycrystalline and monocrystalline niobium was measured in the range 400 0 C to 1000 0 C at one atmosphere hydrogen partial pressure. The experimental technique consists of saturation of the solvent metal with hydrogen, followed by quenching and analysis of the solid solution. It is presented solubility curves versus reciprocal of the absolute doping temperature, associated with their thermodynamical equation. (Author) [pt

  4. Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide

    Science.gov (United States)

    Sahu, Protyush; Chen, Jun-Yang; Myers, Jason C.; Wang, Jian-Ping

    2018-03-01

    We report a thorough crystal and transport characterization of sputtered polycrystalline BixSe1 -x (20 nm), grown on a thermally oxidized silicon substrate. The crystal and grain structures of the sample are characterized by transmission electron microscopy. Selected-area electron diffraction shows a highly polycrystalline structure. Transport measurements suggest semiconducting behavior of the BixSe1 -x film with a very high carrier concentration (˜1020 cm3) and low mobility [˜8 cm2/(V s)]. High-field magnetoresistance measurements reveal weak antilocalization, to which both the low mobility and the angular dependence suggest an impurity-dominated contribution. Fitting parameters are obtained from 2D magnetoconductivity using the Hikami-Larkin-Nagaoka equation. The variation of the phase coherence length with temperature suggests electron-electron scattering for phase decoherence. Electron-electron interaction theory is used to analyze the low-temperature conductivity.

  5. Defects generation by hydrogen passivation of polycrystalline silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Honda, Shinya; Mates, Tomáš; Ledinský, Martin; Fejfar, Antonín; Kočka, Jan; Yamazaki, T.; Uraoka, Y.; Fuyuki, T.; Boldyryeva, Hanna; Macková, Anna; Peřina, Vratislav

    2006-01-01

    Roč. 80, - (2006), s. 653-657 ISSN 0038-092X R&D Projects: GA MŽP(CZ) SM/300/1/03; GA MŽP(CZ) SN/3/172/05; GA AV ČR IAA1010413; GA ČR(CZ) GD202/05/H003; GA AV ČR IAA1010316 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505 Keywords : hydrogen passivation * ERDA * photoluminescence * Raman spectroscopy * Si-H 2 bonding * H 2 molecules * grain size. Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.431, year: 2006

  6. Metal Halide Perovskite Polycrystalline Films Exhibiting Properties of Single Crystals

    NARCIS (Netherlands)

    Brenes, Roberto; Guo, D.; Osherov, Anna; Noel, Nakita K.; Eames, Christopher; Hutter, E.M.; Pathak, Sandeep K.; Niroui, Farnaz; Friend, Richard H.; Islam, M. Saiful; Snaith, Henry J.; Bulović, Vladimir; Savenije, T.J.; Stranks, Samuel D.

    2017-01-01

    Metal halide perovskites are generating enormous excitement for use in solar cells and light-emission applications, but devices still show substantial non-radiative losses. Here, we show that by combining light and atmospheric treatments, we can increase the internal luminescence quantum

  7. Intermetallic semiconducting films

    CERN Document Server

    Wieder, H H

    1970-01-01

    Intermetallic Semiconducting Films introduces the physics and technology of AшВv compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three t

  8. Discrete Tomography and Imaging of Polycrystalline Structures

    DEFF Research Database (Denmark)

    Alpers, Andreas

    High resolution transmission electron microscopy is commonly considered as the standard application for discrete tomography. While this has yet to be technically realized, new applications with a similar flavor have emerged in materials science. In our group at Ris� DTU (Denmark's National...... Laboratory for Sustainable Energy), for instance, we study polycrystalline materials via synchrotron X-ray diffraction. Several reconstruction problems arise, most of them exhibit inherently discrete aspects. In this talk I want to give a concise mathematical introduction to some of these reconstruction...... problems. Special focus is on their relationship to classical discrete tomography. Several open mathematical questions will be mentioned along the way....

  9. Field performance of a polycrystalline silicon module

    International Nuclear Information System (INIS)

    Adegboyega, G.A.; Kuku, T.A.; Salau, A.A.M.

    1985-12-01

    The field performance of a polycrystalline silicon module is reported. The recorded data include the ambient temperature, solar insolation and the module output power. The module has given efficiencies in the range of 2-4% and has demonstrated good stability over a ten month period. From the field data, equations that could be used to predict performance for various seasons of the year for this location have been developed and the fit between predicted and actual performance has been found to be quite good. (author)

  10. Numerical simulation of large deformation polycrystalline plasticity

    International Nuclear Information System (INIS)

    Inal, K.; Neale, K.W.; Wu, P.D.; MacEwen, S.R.

    2000-01-01

    A finite element model based on crystal plasticity has been developed to simulate the stress-strain response of sheet metal specimens in uniaxial tension. Each material point in the sheet is considered to be a polycrystalline aggregate of FCC grains. The Taylor theory of crystal plasticity is assumed. The numerical analysis incorporates parallel computing features enabling simulations of realistic models with large number of grains. Simulations have been carried out for the AA3004-H19 aluminium alloy and the results are compared with experimental data. (author)

  11. Creep cavitation effects in polycrystalline alumina

    International Nuclear Information System (INIS)

    Porter, J.R.; Blumenthal, W.; Evans, A.G.

    1981-01-01

    Fine grained polycrystalline alumina has been deformed in creep at high temperatures, to examine the evolution of cavities at grain boundaries. Cavities with equilibrium and crack-like morphologies have been observed, distributed nonuniformly throughout the material. The role of these cavities during creep has been described. A transition from equilibrium to crack-like morphology has been observed and correlated with a model based on the influence of the surface to boundary diffusivity ratio and the local tensile stress. The contribution of cavitation to the creep rate and total creep strain has been analyzed and excluded as the principal cause of the observed non-linear creep rate

  12. Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

    International Nuclear Information System (INIS)

    Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

    1997-01-01

    We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

  13. Giant 1/f noise in two-dimensional polycrystalline media

    International Nuclear Information System (INIS)

    Snarskii, A.; Bezsudnov, I.

    2008-01-01

    The behaviour of excess (1/f noise) in two-dimensional polycrystalline media is investigated. On the base of current trap model, it is shown that there exists a certain anisotropy value of conductivity tensor for polycrystalline media when the amplitude of 1/f noise becomes giant

  14. Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

    Science.gov (United States)

    Matsuoka, Satoshi; Tsutsumi, Jun'ya; Kamata, Toshihide; Hasegawa, Tatsuo

    2018-04-01

    In this work, a high-resolution microscopic gate-modulation imaging (μ-GMI) technique is successfully developed to visualize inhomogeneous charge and electric field distributions in operating organic thin-film transistors (TFTs). We conduct highly sensitive and diffraction-limit gate-modulation sensing for acquiring difference images of semiconducting channels between at gate-on and gate-off states that are biased at an alternate frequency of 15 Hz. As a result, we observe unexpectedly inhomogeneous distribution of positive and negative local gate-modulation (GM) signals at a probe photon energy of 1.85 eV in polycrystalline pentacene TFTs. Spectroscopic analyses based on a series of μ-GMI at various photon energies reveal that two distinct effects appear, simultaneously, within the polycrystalline pentacene channel layers: Negative GM signals at 1.85 eV originate from the second-derivative-like GM spectrum which is caused by the effect of charge accumulation, whereas positive GM signals originate from the first-derivative-like GM spectrum caused by the effect of leaked gate fields. Comparisons with polycrystalline morphologies indicate that grain centers are predominated by areas with high leaked gate fields due to the low charge density, whereas grain edges are predominantly high-charge-density areas with a certain spatial extension as associated with the concentrated carrier traps. Consequently, it is reasonably understood that larger grains lead to higher device mobility, but with greater inhomogeneity in charge distribution. These findings provide a clue to understand and improve device characteristics of polycrystalline TFTs.

  15. Friction and work function oscillatory behavior for an even and odd number of layers in polycrystalline MoS2.

    Science.gov (United States)

    Lavini, Francesco; Calò, Annalisa; Gao, Yang; Albisetti, Edoardo; Li, Tai-De; Cao, Tengfei; Li, Guoqing; Cao, Linyou; Aruta, Carmela; Riedo, Elisa

    2018-04-24

    A large effort is underway to investigate the properties of two-dimensional (2D) materials for their potential to become building blocks in a variety of integrated nanodevices. In particular, the ability to understand the relationship between friction, adhesion, electric charges and defects in 2D materials is of key importance for their assembly and use in nano-electro-mechanical and energy harvesting systems. Here, we report on a new oscillatory behavior of nanoscopic friction in continuous polycrystalline MoS2 films for an odd and even number of atomic layers, where odd layers show higher friction and lower work function. Friction force microscopy combined with Kelvin probe force microscopy and X-ray photoelectron spectroscopy demonstrates that an enhanced adsorption of charges and OH molecules is at the origin of the observed increase in friction for 1 and 3 polycrystalline MoS2 layers. In polycrystalline films with an odd number of layers, each crystalline nano-grain carries a dipole due to the MoS2 piezoelectricity, therefore charged molecules adsorb at the grain boundaries all over the surface of the continuous MoS2 film. Their displacement during the sliding of a nano-size tip gives rise to the observed enhanced dissipation and larger nanoscale friction for odd layer-numbers. Similarly, charged adsorbed molecules are responsible for the work function decrease in odd layer-number.

  16. Singlet exciton fission in polycrystalline pentacene: from photophysics toward devices.

    Science.gov (United States)

    Wilson, Mark W B; Rao, Akshay; Ehrler, Bruno; Friend, Richard H

    2013-06-18

    Singlet exciton fission is the process in conjugated organic molecules bywhich a photogenerated singlet exciton couples to a nearby chromophore in the ground state, creating a pair of triplet excitons. Researchers first reported this phenomenon in the 1960s, an event that sparked further studies in the following decade. These investigations used fluorescence spectroscopy to establish that exciton fission occurred in single crystals of several acenes. However, research interest has been recently rekindled by the possibility that singlet fission could be used as a carrier multiplication technique to enhance the efficiency of photovoltaic cells. The most successful architecture to-date involves sensitizing a red-absorbing photoactive layer with a blue-absorbing material that undergoes fission, thereby generating additional photocurrent from higher-energy photons. The quest for improved solar cells has spurred a drive to better understand the fission process, which has received timely aid from modern techniques for time-resolved spectroscopy, quantum chemistry, and small-molecule device fabrication. However, the consensus interpretation of the initial studies using ultrafast transient absorption spectroscopy was that exciton fission was suppressed in polycrystalline thin films of pentacene, a material that would be otherwise expected to be an ideal model system, as well as a viable candidate for fission-sensitized photovoltaic devices. In this Account, we review the results of our recent transient absorption and device-based studies of polycrystalline pentacene. We address the controversy surrounding the assignment of spectroscopic features in transient absorption data, and illustrate how a consistent interpretation is possible. This work underpins our conclusion that singlet fission in pentacene is extraordinarily rapid (∼80 fs) and is thus the dominant decay channel for the photoexcited singlet exciton. Further, we discuss our demonstration that triplet excitons

  17. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  18. Considerations for improved polycrystalline cuprate superconductors

    International Nuclear Information System (INIS)

    Shinde, S.L.; Shaw, T.M.

    1990-01-01

    Polycrystalline cuprate superconductors exhibit two-stage superconducting transitions, that are characteristic of granular systems. This behaviour suggests approaches involving improvements in intra and inter-grain properties in order to improve the technologically important superconducting properties such as the magnetic remanent moment and transport critical current density. This paper reports results of our studies on oxygenation, twin density control through grain size and changes in flux pinning within the YBa 2 Cu 3 O 7-δ matrix with Ag substitution under the heading of intra-grain properties and the detrimental effect of grain boundary phases and the effect of Ag substitution on grain boundary pinning under the heading of inter-grain properties

  19. Process Research of Polycrystalline Silicon Material (PROPSM)

    Science.gov (United States)

    Culik, J. S.

    1984-01-01

    An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

  20. Mechanical properties of porous PNZT polycrystalline ceramics

    International Nuclear Information System (INIS)

    Biswas, D.R.; Fulrath, R.M.

    1977-08-01

    Niobium-doped lead zirconate-titanate (PNZT) was used to investigate the effect of porosity on the mechanical properties of a polycrystalline ceramic. Spherical pores (110 to 150 μm diameter) were introduced by using organic materials in the initial specimen fabrication. The matrix grain size (2 to 5 μm) was kept constant. Small pores (2 to 3 μm diameter) of the order of the grain size were formed by varying the sintering conditions. The effect of porosity on strength was predicted quite well by Weibull's probabilistic approach. The Young's modulus showed a linear relationship with increase in porosity. A decrease in fracture toughness with increase in porosity was also observed. It was found that at equivalent porosities, small pore specimens gave higher strength, Young's modulus and fracture toughness compared to specimens containing large pores. Fracture surface analysis, by scanning electron microscopy, showed fracture originated either at the tensile surface or at the edge of the specimen

  1. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  2. Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

    KAUST Repository

    Wang, Lei

    2011-06-01

    We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystallineSr0.6K0.4Fe2As2superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while some others contain nanometer-scale crystallites sandwiched in between amorphous layers. We also find that there is significant oxygen enrichment at the grain boundaries. Such results explain the relatively low transport critical current density (Jc) of polycrystalline samples with respect to that of bicrystal films.

  3. Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

    Energy Technology Data Exchange (ETDEWEB)

    Girard, A.; Coulon, N. [UMR-CNRS 6164, Institut d’Electronique et de Télécommunications de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France); Cardinaud, C. [UMR-CNRS 6502, Institut des Matériaux Jean Rouxel, Université de Nantes, 2 rue de la Houssinière, BP32229, F-44322 Nantes cedex 3 (France); Mohammed-Brahim, T. [UMR-CNRS 6164, Institut d’Electronique et de Télécommunications de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France); Geneste, F., E-mail: Florence.Geneste@univ-rennes1.fr [UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes, Equipe MaCSE, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes cedex (France)

    2014-09-30

    Highlights: • Spontaneous grafting of aryl diazonium salts on polycrystalline silicon surfaces. • Effect of the nature and level of doping on the efficiency of the functionalization. • The grafting process was more efficient on PolySi substrates than on monosilicon. • Influence of the crystal structure and grain boundaries on the modification procedure. • Role of the reducing power of the substrate on the grafting procedure. - Abstract: The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O{sub 2} plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species.

  4. Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

    International Nuclear Information System (INIS)

    Girard, A.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.; Geneste, F.

    2014-01-01

    Highlights: • Spontaneous grafting of aryl diazonium salts on polycrystalline silicon surfaces. • Effect of the nature and level of doping on the efficiency of the functionalization. • The grafting process was more efficient on PolySi substrates than on monosilicon. • Influence of the crystal structure and grain boundaries on the modification procedure. • Role of the reducing power of the substrate on the grafting procedure. - Abstract: The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O 2 plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species

  5. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-01-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte-Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometer for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. Also other neutron related applications have been suggested. (author)

  6. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-07-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation-hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometry for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. (author)

  7. Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

    International Nuclear Information System (INIS)

    Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

    2010-01-01

    Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

  8. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    Science.gov (United States)

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  9. Loss of shear strength in polycrystalline tungsten under shock compression

    International Nuclear Information System (INIS)

    Dandekar, D.P.

    1976-01-01

    A reexamination of existing data on shock compression of polycrystalline tungsten at room temperature indicates that tungsten may be an exception to the common belief that metals do not behave like elastic-isotropic solids under shock compression

  10. Structural Investigation of Photocatalyst Solid Ag1−xCuxInS2 Quaternary Alloys Sprayed Thin Films Optimized within the Lattice Compatibility Theory (LCT Scope

    Directory of Open Access Journals (Sweden)

    A. Colantoni

    2014-01-01

    Full Text Available CuxAg1−xInS2 solid thin films were fabricated through a low-cost process. Particular process-related enhanced properties lead to reaching a minimum of lattice mismatch between absorber and buffer layers within particular solar cell devices. First, copper-less samples X-ray diffraction analysis depicts the presence of AgInS2 ternary compound in chalcopyrite tetragonal phase with privileged (112 peak (d112=1.70 Å according to JCPDS 75-0118 card. Second, when x content increases, we note a shift of the same preferential orientation (112 and its value reaches 1.63 Å corresponding to CuInS2 chalcopyrite tetragonal material according to JCPDS 89-6095 file. Finally, the formation and stability of these quaternaries have been discussed in terms of the lattice compatibility in relation with silver-copper duality within indium disulfide lattice structure. Plausible explanations for the extent and dynamics of copper incorporation inside AgInS2 elaborated ternary matrices have been proposed.

  11. Deuterium transport and trapping in polycrystalline tungsten

    International Nuclear Information System (INIS)

    Anderl, R.A.; Holland, D.F.; Longhurst, G.R.; Pawelko, R.J.; Trybus, C.L.; Sellers, C.H.

    1992-01-01

    This paper reports that deuterium permeation studies for polycrystalline tungsten foil have been conducted to provide data for estimating tritium transport and trapping in tungsten-clad divertors proposed for advanced fusion-reactor concepts. Based on a detailed transmission electron microscopy (TEM) microstructural characterization of the specimen material and on analyses of permeation data measured at temperatures ranging form 610 to 823 K for unannealed and annealed tungsten foil (25 μm thick), the authors note the following key results: deuterium transport in tungsten foil is dominated by extensive trapping that varies inversely with prior anneal temperatures of the foil material, the reduction in the trapped fraction correlates with a corresponding elimination of a high density of dislocations in cell-wall structures introduced during the foil fabrication process, trapping behavior in these foils can be modelled using trap energies between 1.3 eV and 1.5 eV and trap densities ranging from 1 x 10 -5 atom fraction

  12. Thermomechanical characterization of pure polycrystalline tantalum

    International Nuclear Information System (INIS)

    Rittel, D.; Bhattacharyya, A.; Poon, B.; Zhao, J.; Ravichandran, G.

    2007-01-01

    The thermomechanical behavior of pure polycrystalline tantalum has been characterized over a wide range of strain rates, using the recently developed shear compression specimen [D. Rittel, S. Lee, G. Ravichandran, Experimental Mechanics 42 (2002) 58-64]. Dynamic experiments were carried out using a split Hopkinson pressure bar, and the specimen's temperature was monitored throughout the tests using an infrared radiometer. The results of the mechanical tests confirm previous results on pure Ta. Specifically, in addition to its significant strain rate sensitivity, it was observed that pure Ta exhibits very little strain hardening at high strain rates. The measured temperature rise in the specimen's gauge was compared to theoretical predictions which assume a total conversion of the mechanical energy into heat (β = 1) [G.I. Taylor, H. Quinney, Proceedings of the Royal Society of London, vol. A, 1934, pp. 307-326], and an excellent agreement was obtained. This result confirms the previous result of Kapoor and Nemat-Nasser [R. Kapoor, S. Nemat-Nasser, Mech. Mater. 27 (1998) 1-12], while a different experimental approach was adopted here. The assumption that β = 1 is found to be justified in this specific case by the lack of dynamic strain hardening of pure Ta. However, this assumption should be limited to non-hardening materials, to reflect the fact that strain hardening implies that part of the mechanical energy is stored into the material's microstructure

  13. Tritium diffusion in polycrystalline lithium tungstate

    International Nuclear Information System (INIS)

    Krutyakov, A.N.; Shadrin, A.A.; Saunin, E.I.; Gromov, V.V.; Shafiev, A.I.

    1984-01-01

    Using radiometric method the investigation of tritium separation from neutron irradiated (neutron flux density 1.2x10 13 n/cm 2 xs) polycrystalline Li 2 WO 4 in the temperature range 200-680 deg C has been carried out. It is established that the use of helium as gas-carrier of flow-type gas-discharge counter permits to conduct continuous stable measurements of concentrations of tritium extracted depending on its chemical state. It is shown that volume diffusion is the process, limiting tritiated particle separation rate from Li 2 WO 4 . It is found that the process of tritium volume diffusion in Li 2 WO 4 corresponds to two different mechanisms respectively in low- (200-300 deg C) and high-temperature (350-680 deg C) ranges. A supposition is made that in the low-temperature range the process of diffusion is conditioned by the dissociation of the radiation defect-tritiated particle complex, which is confirmed by the data on radiation defect annealing in Li 2 WO 4 . The value of activation energy of tritium separation process in the range 350-680 deg C, proved to be equal to 13.3 kJ/mol. Possible role of crystal structure peculiarities of Li 2 WO 4 for diffusion process is pointed out

  14. Optical constant of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, D. I.; Fedyanin, D. Yu; Arsenin, A. V.

    2017-01-01

    The performance of metal-based devices is limited by ohmic losses in the metal, which are determined by electron scattering. The structural properties of gold thin films also play an important role in the film quality, which may affect its' optical properties and the overall capability...... and spectroscopic ellipsometry, the structural morphology and optical properties of polycrystalline gold thin films (fabricated by e-beam deposition at a low sputtering rate smooth gold) in the thickness range of 20 - 200 nm. By extracting the real and imaginary dielectric function and the Drude parameter...... of the device. At the same time, metal films of different thicknesses are needed for different applications and, since these films are polycrystalline, their internal properties and surface roughness can greatly vary from one thickness to another. In this work, we study, using atomic force microscopy...

  15. Deformation localization and cyclic strength in polycrystalline molybdenum

    Energy Technology Data Exchange (ETDEWEB)

    Sidorov, O.T.; Rakshin, A.F.; Fenyuk, M.I.

    1983-06-01

    Conditions of deformation localization and its interrelation with cyclic strength in polycrystalline molybdenum were investigated. A fatigue failure of polycrystalline molybdenum after rolling and in an embrittled state reached by recrystallization annealing under cyclic bending at room temperature takes place under nonuniform distribution of microplastic strain resulting in a temperature rise in separate sections of more than 314 K. More intensive structural changes take place in molybdenum after rolling than in recrystallized state.

  16. Effects of crystalline quality and electrode material on fatigue in Pb(Zr,Ti)O3 thin film capacitors

    Science.gov (United States)

    Lee, J.; Johnson, L.; Safari, A.; Ramesh, R.; Sands, T.; Gilchrist, H.; Keramidas, V. G.

    1993-07-01

    Pb(Zr(0.52)Ti(0.48))O3 (PZT)/Y1Ba2Cu3O(x) (YBCO) heterostructures were grown by pulsed laser deposition, in which PZT films were epitaxial, highly oriented, or polycrystalline. These PZT films were obtained by varying the deposition temperature from 550 to 760 C or by using various substrates such as SrTiO3 (100), MgO (100), and r-plane sapphire. PZT films with Pt top electrodes exhibited large fatigue with 35-50 percent loss of the remanent polarization after 10 exp 9 cycles, depending on the crystalline quality. Polycrystalline films showed better fatigue resistance than epitaxial or highly oriented films. However, PZT films with both top and bottom YBCO electrodes had significantly improved fatigue resistance for both epitaxial and polycrystalline films. Electrode material seems to be a more important parameter in fatigue than the crystalline quality of the PZT films.

  17. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Yakshin, Andrey; Bijkerk, Frederik

    2015-01-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a

  18. Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

    Science.gov (United States)

    Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; Unocic, Raymond R.; Rack, Philip D.; Baddorf, Arthur P.; Ivanov, Ilia N.; Lavrik, Nickolay V.; List, Frederick; Gupta, Nitant; Bets, Ksenia V.; Yakobson, Boris I.; Smirnov, Sergei N.

    2018-03-01

    There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice1 in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection2 approach, which is now realized in 2D geometry. The method relies on `self-selection' of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

  19. Surface and sub-surface thermal oxidation of thin ruthenium films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

  20. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    Directory of Open Access Journals (Sweden)

    Karim S. Karim

    2011-05-01

    Full Text Available In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs. We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE. Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the

  1. An Optoelectronic Sensor Configuration Using ZnO Thick Film for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Shobhna DIXIT

    2007-08-01

    Full Text Available In the present paper sensitivity of a nanocrystalline ZnO thick film to methanol vapors is reported. The sensing mechanism is the modulation in the intensity of light reflected from glass film interface. Modulation occurs due to the change in refractive index of ZnO film upon adsorption of vapor molecules. The film has been characterized by XRD, SEM, and optical transmission studies. XRD pattern reveals polycrystalline structure of the film with grain size 33.5 nm.

  2. Atomistic modeling of mechanical properties of polycrystalline graphene

    International Nuclear Information System (INIS)

    Mortazavi, Bohayra; Cuniberti, Gianaurelio

    2014-01-01

    We performed molecular dynamics (MD) simulations to investigate the mechanical properties of polycrystalline graphene. By constructing molecular models of ultra-fine-grained graphene structures, we studied the effect of different grain sizes of 1–10 nm on the mechanical response of graphene. We found that the elastic modulus and tensile strength of polycrystalline graphene decrease with decreasing grain size. The calculated mechanical proprieties for pristine and polycrystalline graphene sheets are found to be in agreement with experimental results in the literature. Our MD results suggest that the ultra-fine-grained graphene structures can show ultrahigh tensile strength and elastic modulus values that are very close to those of pristine graphene sheets. (papers)

  3. Polycrystalline Materials as a Cold Neutron and Gamma Radiation Filter

    International Nuclear Information System (INIS)

    Habib, N.

    2009-01-01

    The total neutron cross-section of polycrystalline beryllium, graphite and iron has been calculated beyond their cut-off wavelength using a general formula. The computer Cold Filter code was developed in order to provide the required calculations. The code also permits the calculation of attenuation of reactor gamma radiation, The calculated neutron transmissions through polycrystalline Be graphite and iron at different temperatures were compared with the experimental data measured at the ETRR-1 reactor using two TOF spectrometers. An overall agreement is obtained between the formula fits and experimental data at different temperatures. A feasibility study is carried on using polycrystalline Be, graphite and iron an efficient filter for cold neutrons and gamma radiation.

  4. Atomistic modeling of mechanical properties of polycrystalline graphene.

    Science.gov (United States)

    Mortazavi, Bohayra; Cuniberti, Gianaurelio

    2014-05-30

    We performed molecular dynamics (MD) simulations to investigate the mechanical properties of polycrystalline graphene. By constructing molecular models of ultra-fine-grained graphene structures, we studied the effect of different grain sizes of 1-10 nm on the mechanical response of graphene. We found that the elastic modulus and tensile strength of polycrystalline graphene decrease with decreasing grain size. The calculated mechanical proprieties for pristine and polycrystalline graphene sheets are found to be in agreement with experimental results in the literature. Our MD results suggest that the ultra-fine-grained graphene structures can show ultrahigh tensile strength and elastic modulus values that are very close to those of pristine graphene sheets.

  5. Investigation of the chlorine A-Center in polycrystalline CdTe layers by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, Christian; Metzner, Heiner; Haedrich, Mathias [Institut fuer Festkoerperphysik, Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Schley, Pascal [Institut fuer Physik, Technische Universitaet Ilmenau, 98684 Ilmenau (Germany); Goldhahn, Ruediger [Institut fuer Experimentelle Physik, Universitaet Magdeburg, 39016 Magdeburg (Germany)

    2012-07-01

    Polycrystalline CdTe is a well known absorber material for thin film solar cells. However, the improvement of CdTe-based solar cells for industrial application is mainly based on empirical enhancements of certain process steps which are not concerning the absorber itself. Hence, the defect structure of CdTe is still not understood in detail. One of the most discussed defects in CdTe is the so called chlorine A-center. In general, the A-Center describes a defect complex of the intrinsic cadmium vacancy defect and an extrinsic impurity. By means of photoluminescence spectroscopy at temperatures of 5 K we investigated the behavior of the chlorine A-center under different CdTe activation techniques. Therefore, we were able to determine the electronic level of that defect and to analyze its influence on the crystal quality and the functionality of solar cells that were prepared of the corresponding samples.

  6. Thin film diamond microstructure applications

    Science.gov (United States)

    Roppel, T.; Ellis, C.; Ramesham, R.; Jaworske, D.; Baginski, M. E.; Lee, S. Y.

    1991-01-01

    Selective deposition and abrasion, as well as etching in atomic oxygen or reduced-pressure air, have been used to prepare patterned polycrystalline diamond films which, on further processing by anisotropic Si etching, yield the microstructures of such devices as flow sensors and accelerometers. Both types of sensor have been experimentally tested in the respective functions of hot-wire anemometer and both single- and double-hinged accelerometer.

  7. Nucleation and growth of polycrystalline SiC

    DEFF Research Database (Denmark)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.

    2014-01-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15......R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar...

  8. Hall measurements and grain-size effects in polycrystalline silicon

    International Nuclear Information System (INIS)

    Ghosh, A.K.; Rose, A.; Maruska, H.P.; Eustace, D.J.; Feng, T.

    1980-01-01

    The effects of grain size on Hall measurements in polycrystalline silicon are analyzed and interpreted, with some modifications, using the model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge regions. For materials with large grain sizes, the carrier concentration is independent of the intergrain boundary barrier, whereas the mobility is dependent on it. However, for small grains, both the carrier density and mobility depend on the barrier. These predictions are consistent with experimental results of mm-size Wacker and μm-size neutron-transmutation-doped polycrystalline silicon

  9. Spectral response of a polycrystalline silicon solar cell

    International Nuclear Information System (INIS)

    Ba, B.; Kane, M.

    1994-10-01

    A theoretical study of the spectral response of a polycrystalline silicon n-p junction solar cell is presented. The case of a fibrously oriented grain structure, involving grain boundary recombination velocity and grain size effects is discussed. The contribution of the base region on the internal quantum efficiency Q int is computed for different grain sizes and grain boundary recombination velocities in order to examine their influence. Suggestions are also made for the determination of base diffusion length in polycrystalline silicon solar cells using the spectral response method. (author). 15 refs, 4 figs

  10. Software optimization for electrical conductivity imaging in polycrystalline diamond cutters

    Energy Technology Data Exchange (ETDEWEB)

    Bogdanov, G.; Ludwig, R. [Department of Electrical and Computer Engineering, Worcester Polytechnic Institute, 100 Institute Rd, Worcester, MA 01609 (United States); Wiggins, J.; Bertagnolli, K. [US Synthetic, 1260 South 1600 West, Orem, UT 84058 (United States)

    2014-02-18

    We previously reported on an electrical conductivity imaging instrument developed for measurements on polycrystalline diamond cutters. These cylindrical cutters for oil and gas drilling feature a thick polycrystalline diamond layer on a tungsten carbide substrate. The instrument uses electrical impedance tomography to profile the conductivity in the diamond table. Conductivity images must be acquired quickly, on the order of 5 sec per cutter, to be useful in the manufacturing process. This paper reports on successful efforts to optimize the conductivity reconstruction routine, porting major portions of it to NVIDIA GPUs, including a custom CUDA kernel for Jacobian computation.

  11. Development of surface relief on polycrystalline metals due to sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Voitsenya, V.S. [IPP NSC KIPT, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (Germany); Bardamid, A.F. [Taras Shevchenko National University, 01033 Kiev (Ukraine); Bondarenko, V.N. [IPP NSC KIPT, 61108 Kharkov (Ukraine); Davis, J.W., E-mail: jwdavis@starfire.utias.utoronto.ca [University of Toronto Institute for Aerospace Studies, 4925 Dufferin St., Toronto, ON, Canada M3H5T6 (Canada); Konovalov, V.G.; Ryzhkov, I.V.; Skoryk, O.O.; Solodovchenko, S.I. [IPP NSC KIPT, 61108 Kharkov (Ukraine); Zhang-jian, Zhou [University of Science and Technology Beijing, Beijing 100 083 (China)

    2013-05-01

    The characteristics of surface microrelief that appear in sputtering experiments with polycrystalline metals of various grain sizes have been studied. Specimens with grain sizes varying from 30–70 nm in the case of crystallized amorphous alloys, to 1–3 μm for technical tungsten grade and 10–100 μm for recrystallized tungsten were investigated. A model is proposed for the development of roughness on polycrystalline metals which is based on the dependence of sputtering rate on crystal orientation. The results of the modeling are in good agreement with experiments showing that the length scale of roughness is much larger than the grain size.

  12. Laser induced single-crystal transition in polycrystalline silicon

    International Nuclear Information System (INIS)

    Vitali, G.; Bertolotti, M.; Foti, G.; Rimini, E.

    1978-01-01

    Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 100 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 A thick polycrystalline layer is about 70 MW/cm 2 (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm 2 . (orig.) 891 HPOE [de

  13. Optical constants and structural properties of thin gold films

    DEFF Research Database (Denmark)

    Yakubovsky, Dmitry I.; Arsenin, Aleksey V.; Stebunov, Yury V.

    2017-01-01

    We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold...... rules for thin-film plasmonic and nanophotonic devices....... films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part...

  14. Formation of polycrystalline MgB2 synthesized by powder in sealed tube method with different initial boron phase

    Science.gov (United States)

    Yudanto, Sigit Dwi; Imaduddin, Agung; Kurniawan, Budhy; Manaf, Azwar

    2018-04-01

    Magnesium diboride, MgB2 is a new high critical temperature superconductor that discovered in the beginning of the 21st century. The MgB2 has a simple crystal structure and a high critical temperature, which can be manufactured in several forms like thin films, tapes, wires including bulk in the large scale. For that reason, the MgB2 has good prospects for various applications in the field of electronic devices. In the current work, we have explored the synthesis of MgB2 polycrystalline using powder in a sealed tube method. Different initial boron phase for the synthesized of MgB2 polycrystalline were used. These were, in addition to magnesium powders, crystalline boron, amorphous boron and combination both of them were respectively fitted in the synthesis. The raw materials were mixed in a stoichiometric ratio of Mg: B=1:2, ground using agate mortar, packed into stainless steel SS304. The pack was then sintered at temperature of 800°C for 2 hours in air atmosphere. Phase formation of MgB2 polycrystalline in difference of initial boron phase was characterized using XRD and SEM. Referring to the diffraction pattern and microstructure observation, MgB2 polycrystalline was formed, and the formation was effective when using the crystalline Mg and fully amorphous B as the raw materials. The critical temperature of the specimen was evaluated by the cryogenic magnet. The transition temperature of the MgB2 specimen synthesized using crystalline magnesium and full amorphous boron is 42.678 K (ΔTc = 0.877 K).

  15. The three-dimensional microstructure of polycrystalline materials unravelled by synchrotron light

    DEFF Research Database (Denmark)

    Ludwig, W.; King, A.; Herbig, M.

    2011-01-01

    The three-dimensional microstructure of polycrystalline materials unravelled by synchrotron light Synchrotron radiation X-ray imaging and diffraction techniques offer new possibilities for non-destructive bulk characterization of polycrystalline materials. Minute changes in electron density (diff...

  16. Neutron transmutation doping of polycrystalline silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1976-04-01

    Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

  17. Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

    Science.gov (United States)

    2014-07-14

    Lou, Sina Najmaei, Matin Amani, Matthew L. Chin, Zheng Se. TASK NUMBER Liu Sf. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAMES AND ADDRESSES 8...Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide Sina Najmaei,t.§ Matin Ama ni,M Matthew L. Chin,* Zhe ng liu/ ·"·v: A. Gle n

  18. Electroreduction of CO on Polycrystalline Copper at Low Overpotentials

    DEFF Research Database (Denmark)

    Bertheussen, Erlend; Vagn Hogg, Thomas; Abghoui, Younes

    2018-01-01

    C uis the only monometallic electrocatalyst to produce highly reduced products from CO2 selectively because of its intermediate binding of CO. We investigate the performance of polycrystalline Cu for the electroreduction of CO in alkaline media (0.1 M KOH) at low overpotentials (−0.4 to −0.6 V vs...

  19. A study of ultrasonic velocity and attenuation on polycrystalline Ni ...

    Indian Academy of Sciences (India)

    Unknown

    tion of Fe3O4 particles at 800°C. Industrial grade particles of Ni and Zn oxides were ..... domain wall movements, which leads to electronic migrations: this can ... properties of polycrystalline Mn–Zn Ferrites, Ph.D. Thesis,. Osmania University ...

  20. Influence of hydrogen on high cycle fatigue of polycrystalline vanadium

    International Nuclear Information System (INIS)

    Chung, D.W.; Lee, K.S.; Stoloff, N.S.

    1977-02-01

    The room temperature fatigue behavior of several polycrystalline V-H 2 alloys is described. Hydrogen extends the life of unnotched vanadium but has a deleterious effect in notched materials. Crack propagation data are correlated with tensile yield stress and cyclic strain hardening data

  1. Magnetic field and temperature dependent measurements of hall coefficient in thermal evaporated Tin-Doped Cadmium Oxide Thin films

    International Nuclear Information System (INIS)

    Hamadi, O.; Shakir, N.; Mohammed, F.

    2010-01-01

    CdO:Sn thin films are deposited onto glass substrates by thermal evaporation under vacuum. The studied films are polycrystalline and have an NaCl structure. The Hall effect is studied for films with different thickness as substrates are maintained at different temperatures. The temperature dependence of the Hall mobility is also investigated. (authors)

  2. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  3. Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure

    International Nuclear Information System (INIS)

    Nelson, A.J.; Gabor, A.M.; Contreras, M.A.; Tuttle, J.R.; Noufi, R.; Sobol, P.E.; Asoka-Kumar, P.; Lynn, K.G.

    1995-01-01

    X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface versus bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se 2 thin-film interfaces. Angle-resolved high-resolution photoemission measurements on the valence-band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near surface chemistry of CuInSe 2 and Cu(In,Ga)Se 2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near surface region on device performance. copyright 1995 American Institute of Physics

  4. Structural characterization of chemically deposited PbS thin films

    International Nuclear Information System (INIS)

    Fernandez-Lima, F.A.; Gonzalez-Alfaro, Y.; Larramendi, E.M.; Fonseca Filho, H.D.; Maia da Costa, M.E.H.; Freire, F.L.; Prioli, R.; Avillez, R.R. de; Silveira, E.F. da; Calzadilla, O.; Melo, O. de; Pedrero, E.; Hernandez, E.

    2007-01-01

    Polycrystalline thin films of lead sulfide (PbS) grown using substrate colloidal coating chemical bath depositions were characterized by RBS, XPS, AFM and GIXRD techniques. The films were grown on glass substrates previously coated with PbS colloidal particles in a polyvinyl alcohol solution. The PbS films obtained with the inclusion of the polymer showed non-oxygen-containing organic contamination. All samples maintained the Pb:S 1:1 stoichiometry throughout the film. The amount of effective nucleation centers and the mean grain size have being controlled by the substrate colloidal coating. The analysis of the polycrystalline PbS films showed that a preferable (1 0 0) lattice plane orientation parallel to the substrate surface can be obtained using a substrate colloidal coating chemical bath deposition, and the orientation increases when a layer of colloid is initially dried on the substrate

  5. Properties of MoO3 thin film polymorphs

    International Nuclear Information System (INIS)

    McCarron, E.M.; Carcia, P.F.

    1987-01-01

    Thin film polymorphs of molybdenum trioxide have been synthesized by RF sputtering. Films deposited on thermally floating substrates are polycrystalline and exhibit preferred orientation. Depending upon the oxygen partial pressure maintained during sputtering, the films can be made to crystallize in either the thermodynamically stable orthorhombic α MoO 3 form (unique 2D-layered structure) or the metastable monoclinic β MoO 3 phase (3D ReO 3 -related structure). Metastable β films can be converted thermally to the α phase and the transformation appears topotactic. Films deposited on the cooled substrates are amorphous. A correlation between the particular phase formed and adatom mobility is noted

  6. Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

    Science.gov (United States)

    Girard, A.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.; Geneste, F.

    2014-09-01

    The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O2 plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species.

  7. Growth and characterization of polycrystalline Ge1-xCx by reactive pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez, M.P.; Farias, M.H.; Castillon, F.F.; Diaz, Jesus A.; Avalos, M.; Ulloa, L.; Gallegos, J.A.; Yee-Madeiros, H.

    2011-01-01

    Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T s , on C incorporation to substitutional sites (x) in Ge 1-x C x was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 deg. C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T s of 350 deg. C. The position of the C 1s peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T s from 250 deg. C to 350 deg. C. At T s = 400 deg. C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T s being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T s plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si.

  8. X-ray beam penetration in TXRF measurement of polycrystalline and amorphous surfaces

    International Nuclear Information System (INIS)

    Ghatak-Roy, A.R.; Hossain, T.Z.

    2000-01-01

    For TXRF measurement on single crystal silicon surface, it is generally agreed that the x-ray beam penetration is of the order of a few hundred Angstroms from the surface. However, for polycrystalline and amorphous surfaces - frequently used in semiconductor manufacturing there are evidences that x-rays penetrate much deeper revealing underlying layers. The evidences come from various measurements done with films such as silicon dioxide, silicon nitride and metal films such as aluminum, titanium and cobalt. A systematic study was carried out to help understand the issue further. Four sets of samples (on 8 inch wafers) were prepared to create layers buried under various deposited metal and non-metal layers. The metal layers created were aluminum, titanium and cobalt and the non-metal layers were silicon dioxide and silicon nitride. These samples were analyzed by TXRF under various angles and energies and the data were analyzed for signals from various buried layers along with their angular dependence. The results indicated deep penetration of x-ray beams. The samples were further analyzed by SIMS (Secondary Ion Mass Spectrometry) and some of them by ICP-MS (Inductively Coupled Plasma - Mass Spectrometry) to obtain information about their depth profiles. This was done in order to rule out the possibility of intermixing of layers during deposition. (author)

  9. Zero and low coefficient of thermal expansion polycrystalline oxides

    International Nuclear Information System (INIS)

    Skaggs, S.R.

    1977-09-01

    Polycrystalline oxide systems with zero to low coefficient of thermal expansion (CTE) investigated by the author include hafnia-titania and hafnia. The CTE for 30 to 40 mol% TiO 2 in HfO 2 is less than or equal to 1 x 10 -6 / 0 C, while for other compositions in the range 25 to 60 mol% it is approximately 4 x 10 -6 / 0 C. An investigation of the CTE of 99.999% HfO 2 yielded a value of 4.6 x 10 -6 / 0 C from room temperature to 1000 0 C. Correlation with data on HfO 2 by other investigators shows a definite relationship between the CTE and the amount of ZrO 2 present. Data are listed for comparison of the CTE of several other polycrystalline oxides investigated by Holcombe at Oak Ridge

  10. Zero and low coefficient of thermal expansion polycrystalline oxides

    International Nuclear Information System (INIS)

    Skaggs, S.R.

    1977-01-01

    Polycrystalline oxide systems with zero to low coefficient of thermal expansion (CTE) investigated by the author include hafnia-titania and hafnia. The CTE for 30 to 40 mol percent TiO 2 in HfO 2 is less than or equal to 1 x 10 -6 / 0 C, while for other compositions in the range 25 to 60 mol percent approximately 4 x 10 -6 / 0 C. An investigation of the CTE of 99.999 percent HfO 2 yielded a value of 4.6 x 10 -6 / 0 C from room temperature to 1000 0 C. Correlation with data on HfO 2 by other investigators shows a definite relationship between the CTE and the amount of ZrO 2 present. Data are listed for comparison of the CTE of several other polycrystalline oxides investigated by Holcombe at Oak Ridge

  11. Surface Potential of Polycrystalline Hematite in Aqueous Medium

    Directory of Open Access Journals (Sweden)

    Tajana Preočanin

    2011-01-01

    Full Text Available The surface potential of polycrystalline hematite in aqueous sodium perchlorate environment as a function of pH was examined. Surface potential of hematite was obtained from measured electrode potential of a nonporous polycrystalline hematite electrode. Acidic solution was titrated with base, and the backward titration with acid was performed. Substantial hysteresis was obtained which enabled location of the point of zero potential and equilibrium values of surface potentials. The theoretical interpretation of the equilibrium data was performed by applying the surface complexation model and the thermodynamic equilibrium constants for the first and the second step of surface protonation was obtained as logK1∘=11.3;logK2∘=2.8.

  12. Inelastic x-ray scattering from polycrystalline materials

    International Nuclear Information System (INIS)

    Fischer, I.

    2008-09-01

    Inelastic X-ray scattering (IXS) is a tool to determine the phonon dispersion along high symmetry directions in single crystals. However, novel materials and crystals under extreme conditions are often only available in form of polycrystalline samples. Thus the investigation is limited to orientation-averaged properties. To overcome these limitations, a methodology to extract the single crystal phonon dispersion from polycrystalline materials was developed. The approach consists of recording IXS spectra over a large momentum transfer region and confront them with a Born - von Karman model calculation. A least-square refinement of the model IXS spectra then provides the single crystal dispersion scheme. In this work the method is developed on the test case Be. Further studies were performed on more and more complex systems, in order to explore the limitations. This novel application of IXS promises to be a valuable tool in cases where single crystalline materials are not available. (author)

  13. Formation of photovoltaic modules based on polycrystalline solar cells

    OpenAIRE

    L. A. Dobrzański; A. Drygała; A. Januszka

    2009-01-01

    Purpose: The main aim of the paper is formation of photovoltaic modules and analysis of their main electric parameters.Design/methodology/approach: Photovoltaic modules were produced from four polycrystalline silicon solar cells, that were cut and next joined in series. Soft soldering technique and copper-tin strip were used for joining cells.Findings: In order to provide useful power for any application, the individual solar cells must be connected together to give the appropriate current an...

  14. Ferromagnetic clusters in polycrystalline BaCoO3

    International Nuclear Information System (INIS)

    Botta, P.M.; Pardo, V.; Calle, C. de la; Baldomir, D.; Alonso, J.A.; Rivas, J.

    2007-01-01

    Polycrystalline BaCoO 3 was synthesized by a citrate technique using thermal treatments at high oxygen pressure. Magnetic susceptibility measurements on the compound were carried out under AC conditions. The magnetic properties of the material at low temperatures were found to be determined by the appearance of nanoscale ferromagnetic (FM) regions and not by a true magnetic phase transition. These clusters have a mean size of about 1 nm in diameter and obey an Arrhenius-like thermal relaxation

  15. Mesoscopic approach to modeling elastic-plastic polycrystalline material behaviour

    International Nuclear Information System (INIS)

    Kovac, M.; Cizelj, L.

    2001-01-01

    Extreme loadings during severe accident conditions might cause failure or rupture of the pressure boundary of a reactor coolant system. Reliable estimation of the extreme deformations can be crucial to determine the consequences of such an accident. One of important drawbacks of classical continuum mechanics is idealization of inhomogenous microstructure of materials. This paper discusses the mesoscopic approach to modeling the elastic-plastic behavior of a polycrystalline material. The main idea is to divide the continuum (e.g., polycrystalline aggregate) into a set of sub-continua (grains). The overall properties of the polycrystalline aggregate are therefore determined by the number of grains in the aggregate and properties of randomly shaped and oriented grains. The random grain structure is modeled with Voronoi tessellation and random orientations of crystal lattices are assumed. The elastic behavior of monocrystal grains is assumed to be anisotropic. Crystal plasticity is used to describe plastic response of monocrystal grains. Finite element method is used to obtain numerical solutions of strain and stress fields. The analysis is limited to two-dimensional models.(author)

  16. Polycrystalline diamond detectors with three-dimensional electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Lagomarsino, S., E-mail: lagomarsino@fi.infn.it [University of Florence, Department of Physics, Via Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Firenze, Via B. Rossi 1, 50019 Sesto Fiorentino (Italy); Bellini, M. [INO-CNR Firenze, Largo E. Fermi 6, 50125 Firenze (Italy); Brianzi, M. [INFN Firenze, Via B. Rossi 1, 50019 Sesto Fiorentino (Italy); Carzino, R. [Smart Materials-Nanophysics, Istituto Italiano di Tecnologia, Genova, Via Morego 30, 16163 Genova (Italy); Cindro, V. [Joseph Stefan Institute, Jamova Cesta 39, 1000 Ljubljana (Slovenia); Corsi, C. [University of Florence, Department of Physics, Via Sansone 1, 50019 Sesto Fiorentino (Italy); LENS Firenze, Via N. Carrara 1, 50019 Sesto Fiorentino (Italy); Morozzi, A.; Passeri, D. [INFN Perugia, Perugia (Italy); Università degli Studi di Perugia, Dipartimento di Ingegneria, via G. Duranti 93, 06125 Perugia (Italy); Sciortino, S. [University of Florence, Department of Physics, Via Sansone 1, 50019 Sesto Fiorentino (Italy); INFN Firenze, Via B. Rossi 1, 50019 Sesto Fiorentino (Italy); Servoli, L. [INFN Perugia, Perugia (Italy)

    2015-10-01

    The three-dimensional concept in diamond detectors has been applied, so far, to high quality single-crystal material, in order to test this technology in the best available conditions. However, its application to polycrystalline chemical vapor deposited diamond could be desirable for two reasons: first, the short inter-electrode distance of three-dimensional detectors should improve the intrinsically lower collection efficiency of polycrystalline diamond, and second, at high levels of radiation damage the performances of the poly-crystal material are not expected to be much lower than those of the single crystal one. We report on the fabrication and test of three-dimensional polycrystalline diamond detectors with several inter-electrode distances, and we demonstrate that their collection efficiency is equal or higher than that obtained with conventional planar detectors fabricated with the same material. - Highlights: • Pulsed laser fabrication of polycristalline diamond detectors with 3D electrodes. • Measurement of the charge collection efficiency (CCE) under beta irradiation. • Comparation between the CCE of 3D and conventional planar diamond sensors. • A rationale for the behavior of three-dimensional and planar sensors is given.

  17. Reconstucted topographs of polycrystalline (110) Fe-3 wt% Si samples and the observation of their magnetic domain images using synchrotron radiation

    International Nuclear Information System (INIS)

    Stephenson, J.D.; Kelhae, V.; Tilli, M.; Tuomi, T.

    1978-01-01

    'White' synchrotron radiation topography has been employed to reconstruct almost complete, though slightly shape distorted topographs of polycrystalline samples. Those used in the experiments were commercial (110) Fe-3wt%Si crystals containing several misorientated subgrains and were of thickness between 0.15 and 0.20 mm. The topographs were reassembled 'jig-saw puzzle' fashion from photographically enlarged subgrain mini-topographs located near the centres of each film. Magnetic domains were observed in several subgrain topographs recorded in the Laue-reflection and Laue-transmission modes. The technique emphasizes one of the advantages in using 'white' synchrotron radiation to produce rapid high resolution topographs of polycrystalline samples in relatively hazard free radiation conditions. (Auth.)

  18. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  19. Electrical resistivity due to electron-phonon scattering in thin gadolinium films

    International Nuclear Information System (INIS)

    Urbaniak-Kucharczyk, A.

    1988-01-01

    The contribution to the electrical resistivity due to the electron-phonon scattering for the special case of h.c.p. structure is derived. The numerical results obtained for the case of polycrystalline gadolinum films show the resistivity dependence on the film thickness and the surface properties. (author)

  20. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    Science.gov (United States)

    Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

    2014-12-01

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

  1. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    International Nuclear Information System (INIS)

    Coppedè, Nicola; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Valitova, Irina; Cicoira, Fabio; Mahvash, Farzaneh; Santato, Clara; Martel, Richard

    2014-01-01

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs. (paper)

  2. Physical phenomena stipulating nucleus formation, growth and structure films

    Energy Technology Data Exchange (ETDEWEB)

    Aleksandrov, L N [AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

    1975-03-01

    This review is concerned with the physical phenomena responsible for the nucleation, growth and structure of films. Emphasis is placed on the study of films of solid-metal systems, semiconductors (In, As, Cd, Se, CdS), and dielectrics. The following problems are discussed in the paper: general regularities of the thermodynamics and kinetics of film formation, methods of obtaining a solid film, the process of film formation, the rate of growth of individual grains. The critical film thickness and its measurement are also considered. The results of investigating the process of formation of mono- and polycrystalline films are discussed. It is concluded, on the basis of studies into the relaxation processes accompanying the growth of films, that an insight into these processes will permits improving film properties.

  3. Multiwavelength excitation Raman scattering of Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} (0 ≤ x ≤ 1) polycrystalline thin films: Vibrational properties of sulfoselenide solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrievska, Mirjana; Xie, Haibing; Fairbrother, Andrew; Fontané, Xavier; Saucedo, Edgardo; Izquierdo-Roca, Victor, E-mail: vizquierdo@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); Gurieva, Galina [Helmholtz Centre Berlin for Materials and Energy, Department Crystallography, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Pérez-Rodríguez, Alejandro [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1 2pl., 08930 Sant Adrià del Besòs, Barcelona (Spain); IN" 2UB, Departament d' Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, 08028 Barcelona (Spain); Schorr, Susan [Helmholtz Centre Berlin for Materials and Energy, Department Crystallography, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institute of Geological Sciences, Freie Universität Berlin, Malteserstr. 74-100, 12249 Berlin (Germany)

    2014-07-21

    In this work, Raman spectroscopy and X-ray diffraction were applied together to evaluate the crystal structure and the phonon modes of photovoltaic grade Cu{sub 2}ZnSn(S{sub x}Se{sub 1−x}){sub 4} thin films, leading to a complete characterization of their structural and vibrational properties. Vibrational characterization has been based on Raman scattering measurements performed with different excitation wavelengths and polarization configurations. Analysis of the experimental spectra has permitted identification of 19 peaks, which positions are in good accord with theoretical predictions. Besides, the observation of Cu{sub 2}ZnSnS{sub 4}-like A symmetry peaks related to S vibrations and Cu{sub 2}ZnSnSe{sub 4}-like A symmetry peaks related to Se vibrations, additional Raman peaks, characteristic of the solid solution and previously not reported, are observed, and are attributed to vibrations involving both S and Se anions.

  4. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  5. Exciton Recombination in Formamidinium Lead Triiodide : Nanocrystals versus Thin Films

    NARCIS (Netherlands)

    Fang, Hong-Hua; Protesescu, Loredana; Balazs, Daniel M.; Adjokatse, Sampson; Kovalenko, Maksym V.; Loi, Maria Antonietta

    2017-01-01

    The optical properties of the newly developed near-infrared emitting formamidinium lead triiodide (FAPbI(3)) nanocrystals (NCs) and their polycrystalline thin film counterpart are comparatively investigated by means of steady-state and time-resolved photoluminescence. The excitonic emission is

  6. Effect of thermal annealing on structural properties of SrGa2S4:Ce thin films prepared by flash evaporation

    International Nuclear Information System (INIS)

    Gambarov, E.F.; Bayramov, A.I.

    2009-01-01

    In the present report the preparation technology and structural characterization of Ce 3 +activated SrGa 2 S 4 thin films are given. SrGa 2 S 4 : e thin films are prepared by so called flash evaporation which is simple and inexpensive method for thin film deposition. X-ray diffraction shows that the as deposited films exhibit amorphous behavior, but after annealing in H S stream, the polycrystalline one. EPMA results indicate nearly stoichiometric composition of the thin films

  7. Design of Novel Organic Thin Film Transistors for Wearable Electronics

    Science.gov (United States)

    2012-08-01

    TECHNOLOGICAL ACHIEVEMENTS 7 1.0 INTRODUCTION 7 2.0 CHARACTERISTICS OF OTFTS 3.0 USE OF PHTHALOCYANINE AS A BIOSENSOR 8 4.0 CATHODIC ELECTRODEPOSITION ...public release; distribution is unlimited. 12 4.0 CATHODIC ELECTRODEPOSITION OF ANATASE HIGH DİELECTRIC CONSTANT TITANIA Polycrystalline...oxidised film which is used and left in air for 3 months. 11 5 Raman Spectra for TiO2 films electrodeposited at temperatures: (a) 296K, (b) 318K

  8. High-frequency parameters of magnetic films showing magnetization dispersion

    International Nuclear Information System (INIS)

    Sidorenkov, V.V.; Zimin, A.B.; Kornev, Yu.V.

    1988-01-01

    Magnetization dispersion leads to skewed resonance curves shifted towards higher magnetizing fields, together with considerable reduction in the resonant absorption, while the FMR line width is considerably increased. These effects increase considerably with frequency, in contrast to films showing magnetic-anisotropy dispersion, where they decrease. It is concluded that there may be anomalies in the frequency dependence of the resonance parameters for polycrystalline magnetic films

  9. Palladium assisted silver transport in polycrystalline SiC

    Energy Technology Data Exchange (ETDEWEB)

    Neethling, J.H., E-mail: Jan.Neethling@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); O' Connell, J.H.; Olivier, E.J. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-10-15

    The transport of silver in polycrystalline 3C-SiC and hexagonal 6H-SiC has been investigated by annealing the SiC samples in contact with a Pd-Ag compound at temperatures of 800 and 1000 Degree-Sign C and times of 24 and 67 h. The Pd was added in an attempt to improve the low wetting of SiC by Ag and further because Pd is produced in measurable concentrations in coated particles during reactor operation. Pd is also known to coalesce at the IPyC-SiC interface and to chemically attack the SiC layer. SEM, TEM and EDS were used to show that the Ag penetrates polycrystalline SiC along grain boundaries together with Pd. It is suggested that Ag transport in SiC takes place along grain boundaries in the form of moving nodules consisting of a Ag-Pd mixture. It is assumed that the nodules move along grain boundaries by dissolving the SiC at the leading edge followed by the reprecipitation of SiC at the trailing edge. Since the solubility of Cs in Ag and Pd is extremely low, it is unlikely that Cs will penetrate the SiC together with the Ag-Pd compound if present at the IPyC-SiC interface. If it is assumed that the dominant transport mechanism of Ag in intact polycrystalline SiC is indeed the Pd assisted mechanism, then the stabilization of Pd (and other metallic fission products) in the kernel could be a way of mitigating Ag release from TRISO-coated particles.

  10. Palladium assisted silver transport in polycrystalline SiC

    International Nuclear Information System (INIS)

    Neethling, J.H.; O’Connell, J.H.; Olivier, E.J.

    2012-01-01

    The transport of silver in polycrystalline 3C-SiC and hexagonal 6H-SiC has been investigated by annealing the SiC samples in contact with a Pd–Ag compound at temperatures of 800 and 1000 °C and times of 24 and 67 h. The Pd was added in an attempt to improve the low wetting of SiC by Ag and further because Pd is produced in measurable concentrations in coated particles during reactor operation. Pd is also known to coalesce at the IPyC–SiC interface and to chemically attack the SiC layer. SEM, TEM and EDS were used to show that the Ag penetrates polycrystalline SiC along grain boundaries together with Pd. It is suggested that Ag transport in SiC takes place along grain boundaries in the form of moving nodules consisting of a Ag–Pd mixture. It is assumed that the nodules move along grain boundaries by dissolving the SiC at the leading edge followed by the reprecipitation of SiC at the trailing edge. Since the solubility of Cs in Ag and Pd is extremely low, it is unlikely that Cs will penetrate the SiC together with the Ag–Pd compound if present at the IPyC–SiC interface. If it is assumed that the dominant transport mechanism of Ag in intact polycrystalline SiC is indeed the Pd assisted mechanism, then the stabilization of Pd (and other metallic fission products) in the kernel could be a way of mitigating Ag release from TRISO-coated particles.

  11. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  12. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    International Nuclear Information System (INIS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  13. Hydrogen retention properties of polycrystalline tungsten and helium irradiated tungsten

    International Nuclear Information System (INIS)

    Hino, T.; Koyama, K.; Yamauchi, Y.; Hirohata, Y.

    1998-01-01

    The hydrogen retention properties of a polycrystalline tungsten and tungsten irradiated by helium ions with an energy of 5 keV were examined by using an ECR ion irradiation apparatus and a technique of thermal desorption spectroscopy, TDS. The polycrystalline tungsten was irradiated at RT with energetic hydrogen ions, with a flux of 10 15 H cm -2 and an energy of 1.7 keV up to a fluence of 5 x 10 18 H cm -2 . Subsequently, the amount of retained hydrogen was measured by TDS. The heating temperature was increased from RT to 1000 C, and the heating rate was 50 C min -1 . Below 1000 C, two distinct hydrogen desorption peaks were observed at 200 C and 400 C. The retained amount of hydrogen was observed to be five times smaller than that of graphite, but the concentration in the implantation layer was comparable with that of graphite. Also, the polycrystalline tungsten was irradiated with 5 keV helium ions up to a fluence of 1.4 x 10 18 He cm -2 , and then re-irradiated with 1.7 keV hydrogen ions. The amount of retained hydrogen in this later experiment was close to the value in the case without prior helium ion irradiation. However, the amount of hydrogen which desorbed around the low temperature peak, 200 C, was largely enhanced. The desorption amount at 200 C saturated for the helium fluence of more than 5 x 10 17 He cm -2 . The present data shows that the trapping state of hydrogen is largely changed by the helium ion irradiation. Additionally, 5 keV helium ion irradiation was conducted on a sample pre-implanted with hydrogen ions to simulate a helium ion impact desorption of hydrogen retained in tungsten. The amount of the hydrogen was reduced as much as 50%. (orig.)

  14. Angular-Dependent EDMR Linewidth for Spin-Dependent Space-Charge-Limited Conduction in a Polycrystalline Pentacene

    Directory of Open Access Journals (Sweden)

    Kunito Fukuda

    2017-08-01

    Full Text Available Spin-dependent space-charge-limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived, respectively, from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

  15. Angular-dependent EDMR linewidth for spin-dependent space charge limited conduction in a polycrystalline pentacene

    Science.gov (United States)

    Fukuda, Kunito; Asakawa, Naoki

    2017-08-01

    Spin-dependent space charge limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR) spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived respectively from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

  16. Trace diffusion of different nuclear reactions products in polycrystalline tantalum

    International Nuclear Information System (INIS)

    Beyer, G.J.; Fromm, W.D.; Novgorodov, A.F.

    1976-07-01

    Measurements of the lattice diffusion coefficients for carrier free isotopes of Hf, Lu, Yb, Tm, Tb, Gd, Eu, Ba, Cs, Y, Sr, Rb and As in polycrystalline tantalum were made over the temperature range 1700 Fsub(As)>Fsub(lanthanides)>Fsub(Sr)>Fsub(Ba)>Fsub(Hf)>Fsub(Rb)>Fsub(Cs). The data indicate, that the Arrhenius relation was obeyed over the entire temperature range. Within the lanthanide-group no differences in the diffusion velocities could be detected, this fact points to a diffusion mechanism of Me 3+ -ions of lanthanides, Me 2+ -ions of earth alkaline elements and Me + -ions of alkaline elements. (author)

  17. Compensation for thermally induced birefringence in polycrystalline ceramic active elements

    International Nuclear Information System (INIS)

    Kagan, M A; Khazanov, E A

    2003-01-01

    Polycrystalline ceramics differ significantly from single crystals in that the crystallographic axes (and hence of the axes of thermally induced birefringence) are oriented randomly in each granule of the ceramic. The quaternion formalism is employed to calculate the depolarisation in the ceramics and the efficiency of its compensation. The obtained analytic expressions are in good agreement with the numerical relations. It is shown that the larger the ratio of the sample length to the granule size, the closer the properties of the ceramics to those of a single crystal with the [111] orientation (in particular, the uncompensated depolarisation is inversely proportional to this ratio). (active media)

  18. Modeling chemisorption kinetics of carbon monoxide on polycrystalline platinum

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, R.G.; Modell, M.; Baddour, R.F.

    1978-04-01

    Seven distinct desorption surface states of carbon monoxide on polycrystalline platinum were detected by deconvoluting temperature-programed desorption spectra of 4-100% carbon monoxide monolayer coverage. The adstates had fixed activation energies of desorption (22.5-32.6 kcal/mole) over the entire coverage range. Rates of formation and populations were derived. The chemisorption was modeled by a Hinshelwood-type expression which allowed for site creation and suggested that adsorbed molecules are sufficiently mobile during desorption heating to fill ordered states of minimum energy and that chemisorption into these states is noncompetitive and determined by the surface. Spectra, diagrams, graphs, tables, and 49 references.

  19. Laser beam machining of polycrystalline diamond for cutting tool manufacturing

    Science.gov (United States)

    Wyszyński, Dominik; Ostrowski, Robert; Zwolak, Marek; Bryk, Witold

    2017-10-01

    The paper concerns application of DPSS Nd: YAG 532nm pulse laser source for machining of polycrystalline WC based diamond inserts (PCD). The goal of the research was to determine optimal laser cutting parameters for cutting tool shaping. Basic criteria to reach the goal was cutting edge quality (minimalization of finishing operations), material removal rate (time and cost efficiency), choice of laser beam characteristics (polarization, power, focused beam diameter). The research was planned and realised and analysed according to design of experiment rules (DOE). The analysis of the cutting edge was prepared with use of Alicona Infinite Focus measurement system.

  20. Rotary Ultrasonic Machining of Poly-Crystalline Cubic Boron Nitride

    Directory of Open Access Journals (Sweden)

    Kuruc Marcel

    2014-12-01

    Full Text Available Poly-crystalline cubic boron nitride (PCBN is one of the hardest material. Generally, so hard materials could not be machined by conventional machining methods. Therefore, for this purpose, advanced machining methods have been designed. Rotary ultrasonic machining (RUM is included among them. RUM is based on abrasive removing mechanism of ultrasonic vibrating diamond particles, which are bonded on active part of rotating tool. It is suitable especially for machining hard and brittle materials (such as glass and ceramics. This contribution investigates this advanced machining method during machining of PCBN.

  1. New deformation model of grain boundary strengthening in polycrystalline metals

    International Nuclear Information System (INIS)

    Trefilov, V.I.; Moiseev, V.F.; Pechkovskij, Eh.P.

    1988-01-01

    A new model explaining grain boundary strengthening in polycrystalline metals and alloys by strain hardening due to localization of plastic deformation in narrow bands near grain boundaries is suggested. Occurrence of localized deformation is caused by different flow stresses in grains of different orientation. A new model takes into account the active role of stress concentrator, independence of the strengthening coefficient on deformation, influence of segregations. Successful use of the model suggested for explanation of rhenium effect in molybdenum and tungsten is alloys pointed out

  2. An acoustic emission study of plastic deformation in polycrystalline aluminium

    Science.gov (United States)

    Bill, R. C.; Frederick, J. R.; Felbeck, D. K.

    1979-01-01

    Acoustic emission experiments were performed on polycrystalline and single crystal 99.99% aluminum while undergoing tensile deformation. It was found that acoustic emission counts as a function of grain size showed a maximum value at a particular grain size. Furthermore, the slip area associated with this particular grain size corresponded to the threshold level of detectability of single dislocation slip events. The rate of decline in acoustic emission activity as grain size is increased beyond the peak value suggests that grain boundary associated dislocation sources are giving rise to the bulk of the detected acoustic emissions.

  3. An electrical conductivity inspection methodology of polycrystalline diamond cutters

    Science.gov (United States)

    Bogdanov, G.; Wiggins, J.; Bertagnolli, K.; Ludwig, R.

    2012-05-01

    The polycrystalline diamond cutter (PDC) is widely used in oil and gas drilling operations. It is manufactured by sintering diamond powder onto a tungsten carbide substrate at 6 GPa and 1500 C. During sintering, molten cobalt from the substrate infiltrates the diamond table. The residual metal content correlates with cutter performance. We present an instrument that employs electrical impedance tomography capable of imaging the 3D metal content distribution in the diamond table. These images can be used to predict cutter performance as well as detect flaws.

  4. High energy argon ion irradiations of polycrystalline iron

    International Nuclear Information System (INIS)

    Dunlop, A.; Lesueur, D.; Lorenzelli, N.; Boulanger, L.

    1986-09-01

    We present here the results of our recent irradiations of polycrystalline iron targets with very energetic (1.76 GeV) Ar ions. The targets consist of piles of thin iron samples, the total thickness of each target being somewhat greater than the theoretical range (450 μm) of the ions. We can thus separate the phenomena which occur at different average energies of the ions and study during the slowing-down process: the different types of induced nuclear reactions. They allow us to determine the experimental range of the ions, the defect profiles in the targets, the structure of the displacement cascades (electron microscopy) and their stability

  5. Complex strain paths in polycrystalline copper: microstructural aspects

    Directory of Open Access Journals (Sweden)

    M.F. Vieira

    1999-07-01

    Full Text Available Microstructural aspects of polycrystalline copper sheets subjected to complex strain paths were analysed in this work. Dislocation structures developed during the strain paths (rolling and tension and the evolution of this microstructure during reloading have been studied. The active slip systems developed in each strain path were used to explain the microstructural evolution. The heterogeneous surface deformation observed on polished tensile specimens prestrained in rolling was also analysed. The structural aspects are related with the mechanical behaviour of the material, namely with the increase in yield stress in reloading, the work hardening evolution and the premature occurrence of plastic instability for some prestrain values.

  6. Pyroelectricity in globular protein lysozyme films

    Science.gov (United States)

    Stapleton, A.; Noor, M. R.; Haq, E. U.; Silien, C.; Soulimane, T.; Tofail, S. A. M.

    2018-03-01

    Pyroelectricity is the ability of certain non-centrosymmetric materials to generate an electric charge in response to a change in temperature and finds use in a range of applications from burglar alarms to thermal imaging. Some biological materials also exhibit pyroelectricity but the examples of the effect are limited to fibrous proteins, polypeptides, and tissues and organs of animals and plants. Here, we report pyroelectricity in polycrystalline aggregate films of lysozyme, a globular protein.

  7. Modifying thin film diamond for electronic applications

    International Nuclear Information System (INIS)

    Baral, B.

    1999-01-01

    The unique combination of properties that diamond possesses are being exploited in both electronic and mechanical applications. An important step forward in the field has been the ability to grow thin film diamond by chemical vapour deposition (CVD) methods and to control parameters such as crystal orientation, dopant level and surface roughness. An extensive understanding of the surface of any potential electronic material is vital to fully comprehend its behaviour within device structures. The surface itself ultimately controls key aspects of device performance when interfaced with other materials. This study has provided insight into important chemical reactions on polycrystalline CVD diamond surfaces, addressing how certain surface modifications will ultimately affect the properties of the material. A review of the structure, bonding, properties and potential of diamond along with an account of the current state of diamond technology and CVD diamond growth is provided. The experimental chapter reviews bulk material and surface analytical techniques employed in this work and is followed by an investigation of cleaning treatments for polycrystalline CVD diamond aimed at removing non-diamond carbon from the surface. Selective acid etch treatments are compared and contrasted for efficacy with excimer laser irradiation and hydrogen plasma etching. The adsorption/desorption kinetics of potential dopant-containing precursors on polycrystalline CVD diamond surfaces have been investigated to compare their effectiveness at introducing dopants into the diamond during the growth stage. Both boron and sulphur-containing precursor compounds have been investigated. Treating polycrystalline CVD diamond in various atmospheres / combination of atmospheres has been performed to enhance electron field emission from the films. Films which do not emit electrons under low field conditions can be modified such that they emit at fields as low as 10 V/μm. The origin of this enhancement

  8. Thermal diffusivity of diamond films using a laser pulse technique

    International Nuclear Information System (INIS)

    Albin, S.; Winfree, W.P.; Crews, B.S.

    1990-01-01

    Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective inplane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film

  9. Phase transition in lead titanate thin films: a Brillouin study

    International Nuclear Information System (INIS)

    Kuzel, P; Dugautier, C; Moch, P; Marrec, F Le; Karkut, M G

    2002-01-01

    The elastic properties of both polycrystalline and epitaxial PbTiO 3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO 3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa 2 Cu 3 O 7 . The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO 2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, T C is higher in the sol-gel films, while in the epitaxial films the sign of the T C shift depends on the underlying material

  10. Topography evolution of germanium thin films synthesized by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    P. Schumacher

    2017-04-01

    Full Text Available Germanium thin films were deposited by Pulsed Laser Deposition (PLD onto single crystal Ge (100 and Si (100 substrates with a native oxide film on the surface. The topography of the surface was investigated by Atomic Force Microscopy (AFM to evaluate the scaling behavior of the surface roughness of amorphous and polycrystalline Ge films grown on substrates with different roughnesses. Roughness evolution was interpreted within the framework of stochastic rate equations for thin film growth. Here the Kardar-Parisi-Zhang equation was used to describe the smoothening process. Additionally, a roughening regime was observed in which 3-dimensional growth occurred. Diffusion of the deposited Ge adatoms controlled the growth of the amorphous Ge thin films. The growth of polycrystalline thin Ge films was dominated by diffusion processes only in the initial stage of the growth.

  11. Structural-optical study of high-dielectric-constant oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy)]. E-mail: maria.losurdo@ba.imip.cnr.it; Giangregorio, M.M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Luchena, M. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and Plasmas, IMIP-CNR, Department of Chemistry and INSTM Universita di bari, Via Orabona 4, 70126 Bari (Italy); Toro, R.G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Malandrino, G. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Fragala, I.L. [Dipartimento di Scienze Chimiche, Universita di Catania, and INSTM-UdR Catania, Viale A. Doria 6, I-95125 Catania (Italy); Nigro, R. Lo [Istituto di Microelettronica e Microsistemi, IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy)

    2006-10-31

    High-k polycrystalline Pr{sub 2}O{sub 3} and amorphous LaAlO{sub 3} oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr{sub 2}O{sub 3} films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO{sub 3} films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.

  12. Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films

    KAUST Repository

    Zhang, Yan

    2015-05-13

    Anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.

  13. Microcolumnar and polycrystalline growth of LaBr3:Ce scintillator

    Science.gov (United States)

    Nagarkar, V. V.; Miller, S.; Sia, R.; Gaysinskiy, V.

    2011-05-01

    While a wide variety of new scintillators are now available, cerium-doped lanthanide halide scintillators have shown a strong potential toward fulfilling the needs of highly demanding applications such as radioisotope identification at room temperature, homeland security, quantitative molecular imaging for medical diagnostics, and disease staging and research. Despite their extraordinary advantages in terms of light yield and response uniformity over a wide energy range, issues related to reliable, large volume manufacturing of these high-light-yield materials in a rapid and economic manner has not been resolved or purposefully addressed. Here we report on synthesizing LaBr3:Ce scintillator using a thermal evaporation technique, which offers the potential to synthesize large quantities of small-to-large volume, high-quality material in a time-efficient and cost-effective manner. To date we have successfully applied this method to form both microcolumnar films and thick polycrystalline slabs of LaBr3:Ce, and have characterized their light yield, response linearity, decay time and afterglow.

  14. Breakdown of antiferromagnet order in polycrystalline NiFe/NiO bilayers probed with acoustic emission

    Science.gov (United States)

    Lebyodkin, M. A.; Lebedkina, T. A.; Shashkov, I. V.; Gornakov, V. S.

    2017-07-01

    Magnetization reversal of polycrystalline NiFe/NiO bilayers was investigated using magneto-optical indicator film imaging and acoustic emission techniques. Sporadic acoustic signals were detected in a constant magnetic field after the magnetization reversal. It is suggested that they are related to elastic waves excited by sharp shocks in the NiO layer with strong magnetostriction. Their probability depends on the history and number of repetitions of the field cycling, thus testifying the thermal-activation nature of the long-time relaxation of an antiferromagnetic order. These results provide evidence of spontaneous thermally activated switching of the antiferromagnetic order in NiO grains during magnetization reversal in ferromagnet/antiferromagnet (FM/AFM) heterostructures. The respective deformation modes are discussed in terms of the thermal fluctuation aftereffect in the Fulcomer and Charap model which predicts that irreversible breakdown of the original spin orientation can take place in some antiferromagnetic grains with disordered anisotropy axes during magnetization reversal of exchange-coupled FM/AFM structures. The spin reorientation in the saturated state may induce abrupt distortion of isolated metastable grains because of the NiO magnetostriction, leading to excitation of shock waves and formation of plate (or Lamb) waves.

  15. Contribution to the study of second phases particles dispersion in polycrystalline uranium dioxide

    International Nuclear Information System (INIS)

    Peres, V.

    1994-06-01

    To reduce fission gas release of irradiated polycrystalline uranium dioxide, the dispersion of intragranular nanometric particles of second phase necessary to pin gas bubbles may complete the advantage of a large-grained fuel microstructure. Moreover, intergranular glass films may improve high temperatures mechanical properties of UO 2 . In this study, mixtures of additives composed of ''corindon'' structure oxides that enhance the fuel grain growth and composed of different oxides with variable solid solubilities in the UO 2 matrix were achieved. Additives with a negligible solubility inhibit grain boundaries motion except those, such as silica, that involve a liquid phase at the sintering temperature. Rare earth oxides that form stable solid solutions with UO 2 cannot lead to precipitation, but have no effect on the fuel grain growth doped with ''corindon'' type oxides. A chromium oxide excess allows the creation of a fuel microstructure described by large grains and intragranular spherical Cr 2 O 3 inclusions observed by scanning electron microscopy. Values for the bulk lattice diffusion coefficient of Cr 3+ cations in UO 2 can be deduced from the experimental growth of those dispersed particles by an Ostwald ripening mechanism. The formation of small precipitated metal particles inside the uranium dioxide matrix induced by the internal reduction of a solid solution has not been performed. However, direct reduction of insoluble chromium oxide particles is easy and produces metallic intragranular precipitates. (author). 119 refs., 112 figs., 33 tabs., 5 annexes

  16. Fracture properties of polycrystalline YBa2Cu3Ox

    International Nuclear Information System (INIS)

    Cook, R.F.; Shaw, T.M.; Duncombe, P.R.

    1987-01-01

    Polycrystalline YBa 2 Cu 3 O x has been prepared by sintering pre-reacted powder in oxygen to yield a material with 15 μm grain size, 86% relative density and which superconducts above liquid nitrogen temperatures. Indentation crack length measurements give a toughness K c = 1.3 ± 0.2 MPa m 1/2 , above a threshold contact load for radial crack initiation of approximately 5 N (compared with 1.1 MPa m 1/2 and < 0.1 N, respectively, for single crystals). The increased toughness and threshold contact load are controlled by the deviation of cracks from the plane of maximum driving force for fracture by weak grain boundaries and preferred fracture planes within grains. Optical microscopy of indentation cracks and scanning electron microscopy of fracture surfaces reveals approximately 50% intergranular fracture. The hardness of the polycrystal was H = 2.0 ± 0.5 GPa (compared with 8.7 GPa for single crystals). The decreased hardness arises from the porosity of the polycrystalline material and grain boundary sliding under the indentation contact. Time dependent growth of lateral cracks at the indentation contacts suggests that these materials are susceptible to moisture controlled non-equilibrium crack growth

  17. Microdamage in polycrystalline ceramics under dynamic compression and tension

    International Nuclear Information System (INIS)

    Zhang, K.S.; Zhang, D.; Feng, R.; Wu, M.S.

    2005-01-01

    In-grain microplasticity and intergranular microdamage in polycrystalline hexagonal-structure ceramics subjected to a sequence of dynamic compression and tension are studied computationally using the Voronoi polycrystal model, by which the topological heterogeneity and material anisotropy of the crystals are simulated explicitly. The constitutive modeling considers crystal plasticity by basal slip, intergranular shear damage during compression, and intergranular mode-I cracking during tension. The model parameters are calibrated with the available shock compression and spall strength data on polycrystalline α-6H silicon carbide. The numerical results show that microplasticity is a more plausible micromechanism for the inelastic response of the material under shock compression. On the other hand, the spallation behavior of the shocked material can be well predicted by intergranular mode-I microcracking during load reversal from dynamic compression to tension. The failure process and the resulting spall strength are, however, affected strongly by the intensity of local release heterogeneity induced by heterogeneous microplasticity, and by the grain-boundary shear damage during compression

  18. Electrostrain in excess of 1% in polycrystalline piezoelectrics

    Science.gov (United States)

    Narayan, Bastola; Malhotra, Jaskaran Singh; Pandey, Rishikesh; Yaddanapudi, Krishna; Nukala, Pavan; Dkhil, Brahim; Senyshyn, Anatoliy; Ranjan, Rajeev

    2018-05-01

    Piezoelectric actuators transform electrical energy into mechanical energy, and because of their compactness, quick response time and accurate displacement, they are sought after in many applications. Polycrystalline piezoelectric ceramics are technologically more appealing than single crystals due to their simpler and less expensive processing, but have yet to display electrostrain values that exceed 1%. Here we report a material design strategy wherein the efficient switching of ferroelectric-ferroelastic domains by an electric field is exploited to achieve a high electrostrain value of 1.3% in a pseudo-ternary ferroelectric alloy system, BiFeO3-PbTiO3-LaFeO3. Detailed structural investigations reveal that this electrostrain is associated with a combination of several factors: a large spontaneous lattice strain of the piezoelectric phase, domain miniaturization, a low-symmetry ferroelectric phase and a very large reverse switching of the non-180° domains. This insight for the design of a new class of polycrystalline piezoceramics with high electrostrains may be useful to develop alternatives to costly single-crystal actuators.

  19. Semantic modeling of plastic deformation of polycrystalline rock

    Science.gov (United States)

    Babaie, Hassan A.; Davarpanah, Armita

    2018-02-01

    We have developed the first iteration of the Plastic Rock Deformation (PRD) ontology by modeling the semantics of a selected set of deformational processes and mechanisms that produce, reconfigure, displace, and/or consume the material components of inhomogeneous polycrystalline rocks. The PRD knowledge model also classifies and formalizes the properties (relations) that hold between instances of the dynamic physical and chemical processes and the rock components, the complex physio-chemical, mathematical, and informational concepts of the plastic rock deformation system, the measured or calculated laboratory testing conditions, experimental procedures and protocols, the state and system variables, and the empirical flow laws that define the inter-relationships among the variables. The ontology reuses classes and properties from several existing ontologies that are built for physics, chemistry, biology, and mathematics. With its flexible design, the PRD ontology is well positioned to incrementally develop into a model that more fully represents the knowledge of plastic deformation of polycrystalline rocks in the future. The domain ontology will be used to consistently annotate varied data and information related to the microstructures and the physical and chemical processes that produce them at different spatial and temporal scales in the laboratory and in the solid Earth. The PRDKB knowledge base, when built based on the ontology, will help the community of experimental structural geologists and metamorphic petrologists to coherently and uniformly distribute, discover, access, share, and use their data through automated reasoning and integration and query of heterogeneous experimental deformation data that originate from autonomous rock testing laboratories.

  20. Dielectric and conducting behaviour of polycrystalline holmium octa-molybdate

    International Nuclear Information System (INIS)

    Want, Basharat; Zahoor Ahmad, Bhat; Hamid Bhat, Bilal

    2014-01-01

    Polycrystalline holmium octa-molybdate spherulites have been obtained by using gel diffusion technique and characterized by different physio-chemical techniques. The surfaces of these spherulites are composed of nano-rod with an average diameter of about 80 nm. At room temperature the initial crystal structure is triclinic, space group P1. Thermal studies suggested a phase transition occurring in holmium octa-molybdate crystals at about 793 K. The electrical properties of the system have been studied as a function of frequency and temperature in the ranges of 20 Hz–3 MHz and 290–570 K, respectively. A giant dielectric constant and two loss peaks have been observed in the permittivity formalism. The conducting behaviour of the material is also discussed. The conductivity was found to be 1572 μ Ω −1 m −1 at room temperature and 3 MHz frequency. The conductivity of the polycrystalline material was attributed to the fact that it arises due to the migration of defects on the oxygen sub-lattice. Impedance studies were also performed in the frequency domain to infer the bulk and grain boundary contributions to the overall electric response of the material. The electrical responses have been attributed to the grain, grain-boundary, and interfacial effects. (paper)

  1. Shear strength of shock-loaded polycrystalline tungsten

    International Nuclear Information System (INIS)

    Asay, J.R.; Chhabildas, L.C.; Dandekar, D.P.

    1980-01-01

    Previous experiments have suggested that tungsten undergoes a significant loss of shear strength when shock loaded to stresses greater than 7 GPa. In order to investigate this effect in more detail, a series of experiments was conducted in which polycrystalline tungsten was first shock loaded to approximately 10 GPa and then either unloaded or reloaded from the shocked state. Analysis of measured time-resolved wave profiles indicates that during initial compression to 9.7 GPa, the shear stress in polycrystalline tungsten increases to a maximum value of 1.1 GPA near a longitudinal stress of 5 GPa, but decreases to a final value of 0.8 GPa for stresses approaching 10 GPa. During reloading from a longitudinal stress of 9.7 GPa to a final value of approx.14 GPa, the shear stress increases to a peak value of 1.2 GPa and softens to 1.0 GPa in the final state. During unloading from the shocked state, the initial response is elastic with a strong Baushinger effect. Examination of a recovered sample shows evidence for both deformation slipping and twinning, which may be responsible for the observed softening

  2. Three dimensional grain boundary modeling in polycrystalline plasticity

    Science.gov (United States)

    Yalçinkaya, Tuncay; Özdemir, Izzet; Fırat, Ali Osman

    2018-05-01

    At grain scale, polycrystalline materials develop heterogeneous plastic deformation fields, localizations and stress concentrations due to variation of grain orientations, geometries and defects. Development of inter-granular stresses due to misorientation are crucial for a range of grain boundary (GB) related failure mechanisms, such as stress corrosion cracking (SCC) and fatigue cracking. Local crystal plasticity finite element modelling of polycrystalline metals at micron scale results in stress jumps at the grain boundaries. Moreover, the concepts such as the transmission of dislocations between grains and strength of the grain boundaries are not included in the modelling. The higher order strain gradient crystal plasticity modelling approaches offer the possibility of defining grain boundary conditions. However, these conditions are mostly not dependent on misorientation of grains and can define only extreme cases. For a proper definition of grain boundary behavior in plasticity, a model for grain boundary behavior should be incorporated into the plasticity framework. In this context, a particular grain boundary model ([l]) is incorporated into a strain gradient crystal plasticity framework ([2]). In a 3-D setting, both bulk and grain boundary models are implemented as user-defined elements in Abaqus. The strain gradient crystal plasticity model works in the bulk elements and considers displacements and plastic slips as degree of freedoms. Interface elements model the plastic slip behavior, yet they do not possess any kind of mechanical cohesive behavior. The physical aspects of grain boundaries and the performance of the model are addressed through numerical examples.

  3. The fabrication of YBCO superconductor polycrystalline powder by CCSO

    International Nuclear Information System (INIS)

    Martirosyan, K S; Luss, D; Galstyan, E; Xue, Y Y

    2008-01-01

    We present a novel, cost-effective and simple method to produce polycrystalline superconductor YBa 2 Cu 3 O 7-δ (YBCO) powder by a self-sustaining one-step process called carbon combustion synthesis of oxides (CCSO). In this process the exothermic oxidation of carbon nanoparticles generates a thermal wave that propagates at a velocity of about 1 mm s -1 through the solid yttrium, barium, and copper precursors, converting them rapidly (in the order of seconds) to polycrystalline YBCO. The carbon is not incorporated in the product and is emitted as carbon dioxide (CO 2 ) from the sample, generating a highly porous (∼70%) and friable product. Most of the grains have a plate-like shape, are well connected, and have a size of between 1 and 3 μm. The concentration of the residual carbon was less than 0.06 wt%. The magnetization of as-synthesized samples (without external post-annealing in oxygen), as determined by a SQUID magnetometer, showed an onset of the superconducting (SC) transition at ∼91 K, with a 44% shielding fraction of the -1/(4π) value

  4. Grain-boundary unzipping by oxidation in polycrystalline graphene

    Science.gov (United States)

    Alexandre, Simone; Lucio, Aline; Nunes, Ricardo

    2011-03-01

    The need for large-scale production of graphene will inevitably lead to synthesis of the polycrystalline material [1,2]. Understanding the chemical, mechanical, and electronic properties of grain boundaries in graphene polycrystals will be crucial for the development of graphene-based electronics. Oxidation of this material has been suggested to lead to graphene ribbons, by the oxygen-driven unzipping mechanism. A cooperative-strain mechanism, based on the formation of epoxy groups along lines of parallel bonds in the hexagons of graphene's honeycomb lattice, was proposed to explain the unzipping effect in bulk graphene In this work we employ ab initio calculations to study the oxidation of polycrystalline graphene by chemisorption of oxygen at the grain boundaries. Our results indicate that oxygen tends to segregate at the boundaries, and that the unzipping mechanism is also operative along the grain boundaries, despite the lack of the parallel bonds due to the presence of fivefold and sevenfold carbon rings along the boundary core. We acknowledge support from the Brazilian agencies: CNPq, Fapemig, and INCT-Materiais de Carbono.

  5. First dose-map measured with a polycrystalline diamond 2D dosimeter under an intensity modulated radiotherapy beam

    Energy Technology Data Exchange (ETDEWEB)

    Scaringella, M., E-mail: scaringella@gmail.com [Università di Firenze, Dipartimento di Ingegneria dell’Informazione, Firenze (Italy); Zani, M. [INFN Sezione di Firenze, Sesto Fiorentino, Firenze (Italy); Università di Firenze, Dipartimento di Scienze Biomediche, Sperimentali e Cliniche, Firenze (Italy); Baldi, A. [Università di Firenze, Dipartimento di Ingegneria Industriale, Firenze (Italy); Bucciolini, M. [INFN Sezione di Firenze, Sesto Fiorentino, Firenze (Italy); Università di Firenze, Dipartimento di Scienze Biomediche, Sperimentali e Cliniche, Firenze (Italy); Pace, E.; Sio, A. de [INFN Sezione di Firenze, Sesto Fiorentino, Firenze (Italy); Università di Firenze, Dipartimento di Fisica e Astronomia, Sesto Fiorentino, Firenze (Italy); Talamonti, C. [INFN Sezione di Firenze, Sesto Fiorentino, Firenze (Italy); Università di Firenze, Dipartimento di Scienze Biomediche, Sperimentali e Cliniche, Firenze (Italy); Bruzzi, M. [INFN Sezione di Firenze, Sesto Fiorentino, Firenze (Italy); Università di Firenze, Dipartimento di Fisica e Astronomia, Sesto Fiorentino, Firenze (Italy)

    2015-10-01

    A prototype of bidimensional dosimeter made on a 2.5×2.5 cm{sup 2} active area polycrystalline Chemical Vapour Deposited (pCVD) diamond film, equipped with a matrix of 12×12 contacts connected to the read-out electronics, has been used to evaluate a map of dose under Intensity Modulated Radiation Therapy (IMRT) fields for a possible application in pre-treatment verifications of cancer treatments. Tests have been performed under a 6–10 MVRX beams with IMRT fields for prostate and breast cancer. Measurements have been taken by measuring the 144 pixels in different positions, obtained by shifting the device along the x/y axes to span a total map of 14.4×10 cm{sup 2}. Results show that absorbed doses measured by our pCVD diamond device are consistent with those calculated by the Treatment Planning System (TPS)

  6. Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs

    International Nuclear Information System (INIS)

    Liang, Albert K; Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Zhao, Qihua; Street, Robert A; Lu, Jeng Ping

    2016-01-01

    Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)—a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance—information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ∼240 and 290 μm. (paper)

  7. YBa2Cu3O(7-x) based superconducting thin films by multitarget sputtering

    International Nuclear Information System (INIS)

    Bouteloup, E.; Mercey, B.; Poullain, G.; Brousse, T.; Murray, H.; Raveau, B.

    1990-01-01

    This paper reports a new technique to prepare superconducting YBa 2 Cu 3 O (7-x) thin films. The multitarget sputtering apparatus described below allows the simultaneous and reproducible production of numerous films with a metallic composition close to Y 17% Ba 33% Cu 50% . Superconducting films (R = 0) at 80 K have been produced on polycrystalline zirconia substrates after a high temperature annealing [fr

  8. Growth of Cu thin films by the successive ionic layer adsorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Lindroos, S.; Ruuskanen, T.; Ritala, M.; Leskelae, M.

    2004-01-01

    Copper thin films were grown on reduced indium tin oxide, molybdenum and polymer substrates using successive ionic layer adsorption and reaction (SILAR) method. Copper films were grown sequentially in a controlled way using simple copper salt and basic solution of formaldehyde as precursors. The copper films were polycrystalline with no preferred orientation as characterised by X-ray diffraction. On all substrates, the growth was clearly island growth in the beginning but after the whole surface was covered, the growth was more homogeneous

  9. Micro-Raman spectroscopy studies of bulk and thin films of CuInTe2

    International Nuclear Information System (INIS)

    Ananthan, M R; Mohanty, Bhaskar Chandra; Kasiviswanathan, S

    2009-01-01

    Micro-Raman spectroscopy measurements were made on polycrystalline and amorphous thin films of CuInTe 2 as well as bulk polycrystalline CuInTe 2 . Various vibrational modes exhibited by the bulk and polycrystalline thin films were attributed to those expected for single crystal CuInTe 2 . Raman spectra of amorphous films presented a broad spectrum, decomposition of which revealed the presence of elemental tellurium on the film surface. Laser-induced changes on CuInTe 2 thin films were studied by acquiring spectra with higher laser beam power. Modes due to tellurium appeared when the spectra were acquired during laser–sample interaction, indicating tellurium segregation. The Raman spectra measured from polycrystalline films during high laser power irradiation did not show decrease in the intensity of the A 1 mode of CuInTe 2 in spite of loss of tellurium from the lattice. This has been interpreted as related to an increased contribution from the undistorted subsurface CuInTe 2 region at higher excitation power

  10. Electromechanical Response of Polycrystalline Barium Titanate Resolved at the Grain Scale

    DEFF Research Database (Denmark)

    Majkut, Marta; Daniels, John E.; Wright, Jonathan P.

    2017-01-01

    critical for understanding bulk polycrystalline ferroic behavior. Here, three-dimensional X-ray diffraction is used to reconstruct a 3D grain map (grain orientations and neighborhoods) of a polycrystalline barium titanate sample and track the grain-scale non-180° ferroelectric domain switching strains...

  11. Friction and dynamically dissipated energy dependence on temperature in polycrystalline silicon MEMS devices

    NARCIS (Netherlands)

    Gkouzou, A.; Kokorian, J.; Janssen, G.C.A.M.; van Spengen, W.M.

    2017-01-01

    In this paper, we report on the influence of capillary condensation on the sliding friction of sidewall surfaces in polycrystalline silicon micro-electromechanical
    systems (MEMS). We developed a polycrystalline silicon MEMS tribometer, which is a microscale test device with two components

  12. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  13. Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

    Science.gov (United States)

    Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

    1984-01-01

    The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

  14. Influence of strain and polycrystalline ordering on magnetic properties of high moment rare earth metals and alloys

    International Nuclear Information System (INIS)

    Scheunert, G; Ward, C; Hendren, W R; Bowman, R M; Lapicki, A A; Hardeman, R; Mooney, M; Gubbins, M

    2014-01-01

    Despite being the most suitable candidates for solenoid pole pieces in state-of-the-art superconductor-based electromagnets, the intrinsic magnetic properties of heavy rare earth metals and their alloys have gained comparatively little attention. With the potential of integration in micro and nanoscale devices, thin films of Gd, Dy, Tb, DyGd and DyTb were plasma-sputtered and investigated for their in-plane magnetic properties, with an emphasis on magnetization versus temperature profiles. Based on crystal structure analysis of the polycrystalline rare earth films, which consist of a low magnetic moment fcc layer at the seed interface topped with a higher moment hcp layer, an experimental protocol is introduced which allows the direct magnetic analysis of the individual layers. In line with the general trend of heavy lanthanides, the saturation magnetization was found to drop with increasing unit cell size. In situ annealed rare earth films exceeded the saturation magnetization of a high-moment Fe 65 Co 35 reference film in the cryogenic temperature regime, proving their potential for pole piece applications; however as-deposited rare earth films were found completely unsuitable. In agreement with theoretical predictions, sufficiently strained crystal phases of Tb and Dy did not exhibit an incommensurate magnetic order, unlike their single-crystal counterparts which have a helical phase. DyGd and DyTb alloys followed the trends of the elemental rare earth metals in terms of crystal structure and magnetic properties. Inter-rare-earth alloys hence present a desirable blend of saturation magnetization and operating temperature. (paper)

  15. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  16. Mueller matrix mapping of biological polycrystalline layers using reference wave

    Science.gov (United States)

    Dubolazov, A.; Ushenko, O. G.; Ushenko, Yu. O.; Pidkamin, L. Y.; Sidor, M. I.; Grytsyuk, M.; Prysyazhnyuk, P. V.

    2018-01-01

    The paper consists of two parts. The first part is devoted to the short theoretical basics of the method of differential Mueller-matrix description of properties of partially depolarizing layers. It was provided the experimentally measured maps of differential matrix of the 1st order of polycrystalline structure of the histological section of brain tissue. It was defined the statistical moments of the 1st-4th orders, which characterize the distribution of matrix elements. In the second part of the paper it was provided the data of statistic analysis of birefringence and dichroism of the histological sections of mice liver tissue (normal and with diabetes). It were defined the objective criteria of differential diagnostics of diabetes.

  17. Analysis of Operating Temperature of the Polycrystalline Solar Cell

    Directory of Open Access Journals (Sweden)

    Vladimír GÁLL

    2017-12-01

    Full Text Available This work deals with the solar cells with orientation on the calculation of operating temperature of the polycrystalline solar cell, which is under actual load. Operating conditions have a significant effect on the efficiency of solar cells. In the summer with increasing temperature, the efficiency decreases. In the winter, efficiency and output voltage are rising. The operating temperature is determined by intensity of solar radiation, the types of materials used by construction and operating condition. The aim of this work was simplify of the calculation of operating temperature of solar cells. The result of this work is a derived equation that allows a more accurate and faster calculation this temperature with using Matlab software.

  18. Creep behavior for advanced polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira [Kyoto Univ. (Japan)] [and others

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  19. Microcracking in polycrystalline YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Smith, D.S.; Suasmoro, S.; Huger, M.; Gault, C.

    1991-01-01

    The presence of microcracks can have a significant role for the electrical properties of polycrystalline YBa 2 Cu 3 O 7-δ due to the reduction of the effective current carrying cross section. This results in an increase of the normal state resistivity and a decrease of the critical current density, j c . Shaw et.al have reported an onset of microcracking for grain sizes greater than 1-2 μm. In this work we focus attention on the geometrical aspects of the microstructure by using ultrasonic measurements to characterize the mechanical properties of the ceramic for comparison to the electrical data. The studies have been extended with experiments as a function of temperature and atmosphere in order to investigate the origins of the microcracks. (orig./BHO)

  20. Mechanical properties of amorphous and polycrystalline multilayer systems

    International Nuclear Information System (INIS)

    Barzen, I.; Edinger, M.; Scherer, J.; Ulrich, S.; Jung, K.; Ehrhardt, H.

    1993-01-01

    Amorphous and polycrystalline multilayer structures containing materials with metallic (Cr, Cr 3 C 2 ), ionic (Al 2 O 3 ) and covalent (SiC) bonding have been prepared by magnetron sputtering and ion plating in a dual-source apparatus. Up to 1000 layers have been deposited with a constant total thickness of 2.3 μm. Below a single-layer thickness of 10-30 nm the mechanical properties stress and hardness show strong variations. On one hand it is possible that below a certain thickness the mechanical properties of a single layer change. On the other hand electrical resistance and electron spin density measurements indicate that electronic effects may be involved. An attempt is made to explain the observed correlations by transport mechanisms of the electrons, by saturation of dangling bonds with delocalized electrons and by changes in the electronic band structure. (orig.)

  1. Polycrystalline Diamond Coating of Additively Manufactured Titanium for Biomedical Applications.

    Science.gov (United States)

    Rifai, Aaqil; Tran, Nhiem; Lau, Desmond W; Elbourne, Aaron; Zhan, Hualin; Stacey, Alastair D; Mayes, Edwin L H; Sarker, Avik; Ivanova, Elena P; Crawford, Russell J; Tran, Phong A; Gibson, Brant C; Greentree, Andrew D; Pirogova, Elena; Fox, Kate

    2018-03-14

    Additive manufacturing using selective laser melted titanium (SLM-Ti) is used to create bespoke items across many diverse fields such as medicine, defense, and aerospace. Despite great progress in orthopedic implant applications, such as for "just in time" implants, significant challenges remain with regards to material osseointegration and the susceptibility to bacterial colonization on the implant. Here, we show that polycrystalline diamond coatings on these titanium samples can enhance biological scaffold interaction improving medical implant applicability. The highly conformable coating exhibited excellent bonding to the substrate. Relative to uncoated SLM-Ti, the diamond coated samples showed enhanced mammalian cell growth, enriched apatite deposition, and reduced microbial S. aureus activity. These results open new opportunities for novel coatings on SLM-Ti devices in general and especially show promise for improved biomedical implants.

  2. Structural Evolution and Mechanisms of Fatigue in Polycrystalline Brass

    DEFF Research Database (Denmark)

    Carstensen, Jesper Vejlø

    The plastic strain controlled fatigue behaviour of polycrystalline Cu-15%Zn and Cu-30%Zn has been investigated with the aim of studying the effect of slip mode modification by the addition of zinc to copper. It has been clearly demonstrated, that true cyclic saturation does not occur in the plastic...... type single slip. This behaviour has been described by the self-consistent Sachs-Eshelby model, which provides estimates of the CSS curve for brass polycrystals. Successive stages of primary hardening, softening and secondary hardening has been observed in the plastic strain controlled fatigue of brass....... It has been found that the primary hardening is attributed to an increase of intergranular stresses whereas the sec-ondary hardening apparently is attributed to an increase of friction stresses. Investigations of the structural evolution show that the softening behaviour can be explained by the presence...

  3. Polycrystalline Silicon Gettered by Porous Silicon and Heavy Phosphorous Diffusion

    Institute of Scientific and Technical Information of China (English)

    LIU Zuming(刘祖明); Souleymane K Traore; ZHANG Zhongwen(张忠文); LUO Yi(罗毅)

    2004-01-01

    The biggest barrier for photovoltaic (PV) utilization is its high cost, so the key for scale PV utilization is to further decrease the cost of solar cells. One way to improve the efficiency, and therefore lower the cost, is to increase the minority carrier lifetime by controlling the material defects. The main defects in grain boundaries of polycrystalline silicon gettered by porous silicon and heavy phosphorous diffusion have been studied. The porous silicon was formed on the two surfaces of wafers by chemical etching. Phosphorous was then diffused into the wafers at high temperature (900℃). After the porous silicon and diffusion layers were removed, the minority carrier lifetime was measured by photo-conductor decay. The results show that the lifetime's minority carriers are increased greatly after such treatment.

  4. Wavelet analysis of polarization maps of polycrystalline biological fluids networks

    Science.gov (United States)

    Ushenko, Y. A.

    2011-12-01

    The optical model of human joints synovial fluid is proposed. The statistic (statistic moments), correlation (autocorrelation function) and self-similar (Log-Log dependencies of power spectrum) structure of polarization two-dimensional distributions (polarization maps) of synovial fluid has been analyzed. It has been shown that differentiation of polarization maps of joint synovial fluid with different physiological state samples is expected of scale-discriminative analysis. To mark out of small-scale domain structure of synovial fluid polarization maps, the wavelet analysis has been used. The set of parameters, which characterize statistic, correlation and self-similar structure of wavelet coefficients' distributions of different scales of polarization domains for diagnostics and differentiation of polycrystalline network transformation connected with the pathological processes, has been determined.

  5. Effect of localized polycrystalline silicon properties on solar cell performance

    Science.gov (United States)

    Leung, D.; Iles, P. A.; Hyland, S.; Kachare, A.

    1984-01-01

    Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

  6. Dislocation structures around crack tips of fatigued polycrystalline copper

    International Nuclear Information System (INIS)

    Kaneko, Yoshihisa; Ishikawa, Masao; Hashimoto, Satoshi

    2005-01-01

    Dislocation structures near fatigue cracks of polycrystalline copper specimens were analyzed using the electron channelling contrast imaging (ECCI) technique. Prior to the ECCI observations, optical microscopy was conducted to classify the fatigue crack morphologies into several kinds. It was found that the dislocation structures were correlated with the slip morphologies observed using the optical microscope. The cell structure almost corresponded to the severely deformed plastic zone where the individual slip bands could not be identified. The labyrinth dislocation structure was detected at the double-slip region. Ladder-like dislocation structure was detected ahead of the Stage I type fatigue crack. Hence, it can be said that the persistent slip band (PSB) was a favorable crack path. However, the microscopic route of the crack growth was not along the PSB but along the cell structure, which was developed locally in the vicinity of the crack tip

  7. Slip activity of persistent slip bands in polycrystalline nickel

    International Nuclear Information System (INIS)

    Weidner, A.; Beyer, R.; Blochwitz, C.; Holste, C.; Schwab, A.; Tirschler, W.

    2006-01-01

    The appearance of glide localizations after cyclic deformation in the saturation stage was investigated for polycrystalline nickel. It was shown that persistent slip bands (PSBs) are formed in a wide range of grain orientations. Concerning the grain size it was found, that the probability for the appearance of PSBs is higher for larger grains. The local slip activity of the formed PSBs was studied after half-cycle deformation using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The fraction of grains with glide-active PSBs and the glide-active PSB volume itself is very small after the half-cycle loading. The obtained local shear strain amplitudes are quite high and vary in the range of 0.2-5%. They are comparable with those found in nickel single crystals at the same loading procedure

  8. Surface roughness effects on blister formation in polycrystalline molybdenum

    International Nuclear Information System (INIS)

    Saidoh, Masahiro; Sone, Kazuho; Yamada, Rayji; Ohtsuka, Hidewo; Murakami, Yoshio

    1977-07-01

    Polycrystalline molybdenum targets with electropolished and roughened surfaces were bombarded with 100 keV He + and 200 keV H 2 + ions at room temperature. It has been demonstrated that the blister formation is largely or completely suppressed by roughening the electropolished surface with emery paper of No. 1200, No. 400 and No. 100. Up to a He + fluence of 1.0 x 10 19 particles/cm 2 , no blisters are observed in the targets with the two roughest surfaces, while on the smooth surface blisters begin to occur at a fluence of 7.5 x 10 17 particles/cm 2 . The surface roughness effect on blister suppression is discussed in relation to the projected range of incident particles. (auth.)

  9. Sputtering mechanisms of polycrystalline platinum by low energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    1999-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  10. Incorporation, diffusion and segregation of impurities in polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Deville, J.P.; Soltani, M.L. (Universite Louis Pasteur, 67 - Strasbourg (France)); Quesada, J. (Laboratoire de Metallurgie-Chimie des Materiaux, E.N.S.A.I.S., 67 - Strasbourg (France))

    1982-01-01

    We studied by means of X-Ray photoelectron Spectroscopy the nature, distribution and, when possible, the chemical bond of impurities at the surface of polycrystalline silicon samples grown on a carbon ribbon. Besides main impurities (carbon and oxygen), always present at concentrations around their limit of solubility in silicon, metal impurities have been found: their nature varies from one sample to another. Their spatial distribution is not random: some are strictly confined at the surface (sodium), whereas others are in the superficial oxidized layer (calcium, magnesium) or localized at the oxide-bulk silicon interface (iron). Metal impurities are coming from the carbon ribbon and are incorporated to silicon during the growth process. It is not yet possible to give a model of diffusion processes of impurities since they are too numerous and interact one with the other. However oxygen seems to play a leading role in the spatial distribution of metal impurities.

  11. Electronic properties of polycrystalline graphene under large local strain

    International Nuclear Information System (INIS)

    He, Xin; Tang, Ning; Duan, Junxi; Mei, Fuhong; Meng, Hu; Lu, Fangchao; Xu, Fujun; Yang, Xuelin; Gao, Li; Wang, Xinqiang; Shen, Bo; Ge, Weikun

    2014-01-01

    To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.

  12. Improved orientation sampling for indexing diffraction patterns of polycrystalline materials

    DEFF Research Database (Denmark)

    Larsen, Peter Mahler; Schmidt, Søren

    2017-01-01

    to that of optimally distributing points on a four‐dimensional sphere. In doing so, the number of orientation samples needed to achieve a desired indexing accuracy is significantly reduced. Orientation sets at a range of sizes are generated in this way for all Laue groups and are made available online for easy use.......Orientation mapping is a widely used technique for revealing the microstructure of a polycrystalline sample. The crystalline orientation at each point in the sample is determined by analysis of the diffraction pattern, a process known as pattern indexing. A recent development in pattern indexing...... in the presence of noise, it has very high computational requirements. In this article, the computational burden is reduced by developing a method for nearly optimal sampling of orientations. By using the quaternion representation of orientations, it is shown that the optimal sampling problem is equivalent...

  13. Polycrystalline CVD diamond device level modeling for particle detection applications

    Science.gov (United States)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-12-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  14. Brine migration in hot-pressed polycrystalline sodium chloride

    International Nuclear Information System (INIS)

    Biggers, J.V.; Dayton, G.O.

    1982-12-01

    This report describes experiments designed to provide data on brine migration in polycrystalline salt. Polycrystalling samples of various grain sizes, density, and purity were prepared from several commercial-grade salts by hot-pressing. Three distinct experimental set-ups were used to place salt billets in an induced thermal gradient in contact with brine source. The test designs varied primarily in the way in which the thermal gradient was applied and monitored and the way in which brine migration was determined. All migration was in enclosed vessels which precluded visual observation of brine movement through the microstructure. Migration velocities were estimated either by the timed appearance of brine at the hot face of the sample, or by determination of the penetration distance of migration artifacts in the microstructure after tests of fixed duration. For various reasons both of these methods were subject to a large degree of error. Our results suggest, however, that the migration velocity in dense polycrystalline salt may be at least an order of magnitude greater than that suggested by single-crystal experiments. Microstructural analysis shows that brine prefers to migrate along paths of high crystalline activity such as grain and subgrain boundaries and is dispersed rather quickly in the microstructure. A series of tests were performed using various types of tracers in brine in order to flag migration paths and locate brine in the microstructure more decisively. These attempts failed and it appears that only the aqueous portion of the brine moves through the microstructure with the dissolved ions being lost and replaced rather quickly. This suggests the use of deuterium as a tracer in future work

  15. Polycrystalline CVD diamond device level modeling for particle detection applications

    International Nuclear Information System (INIS)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-01-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  16. Film Reviews.

    Science.gov (United States)

    Lance, Larry M.; Atwater, Lynn

    1987-01-01

    Reviews four Human Sexuality films and videos. These are: "Personal Decisions" (Planned Parenthood Federation of America, 1985); "The Touch Film" (Sterling Production, 1986); "Rethinking Rape" (Film Distribution Center, 1985); "Not A Love Story" (National Film Board of Canada, 1981). (AEM)

  17. A Boltzmann-weighted hopping model of charge transport in organic semicrystalline films

    KAUST Repository

    Kwiatkowski, Joe J.; Jimison, Leslie H.; Salleo, Alberto; Spakowitz, Andrew J.

    2011-01-01

    We present a model of charge transport in polycrystalline electronic films, which considers details of the microscopic scale while simultaneously allowing realistically sized films to be simulated. We discuss the approximations and assumptions made by the model, and rationalize its application to thin films of directionally crystallized poly(3-hexylthiophene). In conjunction with experimental data, we use the model to characterize the effects of defects in these films. Our findings support the hypothesis that it is the directional crystallization of these films, rather than their defects, which causes anisotropic mobilities. © 2011 American Institute of Physics.

  18. Structural transformation of CsI thin film photocathodes under exposure to air and UV irradiation

    CERN Document Server

    Tremsin, A S; Siegmund, O H W

    2000-01-01

    Transmission electron microscopy has been employed to study the structure of polycrystalline CsI thin films and its transformation under exposure to humid air and UV irradiation. The catastrophic degradation of CsI thin film photocathode performance is shown to be associated with the film dissolving followed by its re-crystallization. This results in the formation of large lumps of CsI crystal on the substrate surface, so that the film becomes discontinuous and its performance as a photocathode is permanently degraded. No change in the surface morphology and the film crystalline structure was observed after the samples were UV irradiated.

  19. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  20. Conformational order of n-dodecanethiol and n-dodecaneselenol monolayers on polycrystalline copper investigated by PM-IRRAS and SFG spectroscopy

    Science.gov (United States)

    Fonder, G.; Cecchet, F.; Peremans, A.; Thiry, P. A.; Delhalle, J.; Mekhalif, Z.

    2009-08-01

    Self-assembled monolayers (SAMs) of n-dodecanethiol (C 12H 25SH) and n-dodecaneselenol (C 12H 25SeH) on polycrystalline copper have been elaborated with the purpose of achieving densely packed and crystalline-like assemblies. By combining the surface sensitivity of polarization modulation infrared reflection absorption spectroscopy (PM-IRRAS) and sum-frequency generation spectroscopy (SFG), the effect of the self-assembly time (15 min, 30 min, 1 h, 2 h and 24 h) on the formation of n-dodecanethiol and n-dodecaneselenol monolayers on untreated and electrochemically reduced polycrystalline copper has been investigated. On electrochemically reduced copper, PM-IRRAS spectroscopy shows that both molecules are able to form well organized layers. SFG spectroscopy indicates that the C 12H 25SeH SAMs are slightly better ordered than those achieved with C 12H 25SH. On untreated copper, the two molecules lead to different film organizations. Both PM-IRRAS and SFG indicate that C 12H 25SH SAMs are of the same film quality as those obtained on electrochemically reduced copper. On the contrary, C 12H 25SeH monolayers are invariably poorly organized at the molecular level.

  1. Formation of VO{sub 2} by rapid thermal annealing and cooling of sputtered vanadium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ba, Cheikhou O. F., E-mail: cheikhou.ba.1@ulaval.ca; Fortin, Vincent; Bah, Souleymane T.; Vallée, Réal [Centre d' optique, photonique et laser (COPL), Université Laval, Québec G1V 0A6 (Canada); Pandurang, Ashrit [Thin Films and Photonics Research Group (GCMP), Department of Physics and Astronomy, Université de Moncton, Moncton, New Brunswick E1A 3E9 (Canada)

    2016-05-15

    Sputtered vanadium-rich films were subjected to rapid thermal annealing-cooling (RTAC) in air to produce vanadium dioxide (VO{sub 2}) thin films with thermochromic switching behavior. High heating and cooling rates in the thermal oxidation process provided an increased ability to control the film's microstructure. X-ray diffraction patterns of the films revealed less intense VO{sub 2} peaks compared to traditional polycrystalline samples fabricated with a standard (slower) cooling time. Such films also exhibit a high optical switching reflectance contrast, unlike the traditional polycrystalline VO{sub 2} thin films, which show a more pronounced transmittance switching. The authors find that the RTAC process stabilizes the VO{sub 2} (M2) metastable phase, enabling a rutile-semiconductor phase transition (R-M2), followed by a semiconductor–semiconductor phase transition (M2-M1).

  2. Morphology selection for cupric oxide thin films by electrodeposition.

    Science.gov (United States)

    Dhanasekaran, V; Mahalingam, T; Chandramohan, R

    2011-10-01

    Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

  3. The state of the art of thin-film photovoltaics

    International Nuclear Information System (INIS)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future

  4. Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

    International Nuclear Information System (INIS)

    Jiménez, David; Chaves, Ferney; Cummings, Aron W.; Van Tuan, Dinh; Kotakoski, Jani; Roche, Stephan

    2014-01-01

    We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices

  5. Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jiménez, David; Chaves, Ferney [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, 08193-Bellaterra (Spain); Cummings, Aron W.; Van Tuan, Dinh [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Kotakoski, Jani [Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien (Austria); Department of Physics, University of Helsinki, P.O. Box 43, 00014 University of Helsinki (Finland); Roche, Stephan [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

    2014-01-27

    We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

  6. Hydrogen-induced structural changes in polycrystalline silicon as revealed by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Arole, V.M.; Takwale, M.G.; Bhide, V.G.

    1989-01-01

    Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon wafer, brought about by hydrogen passivation. (author)

  7. Comparison of effective transverse piezoelectric coefficients e31,f of Pb(Zr,Ti)O3 thin films between direct and converse piezoelectric effects

    Science.gov (United States)

    Tsujiura, Yuichi; Kawabe, Saneyuki; Kurokawa, Fumiya; Hida, Hirotaka; Kanno, Isaku

    2015-10-01

    We evaluated the effective transverse piezoelectric coefficients (e31,f) of Pb(Zr,Ti)O3 (PZT) thin films from both the direct and converse piezoelectric effects of unimorph cantilevers. (001) preferentially oriented polycrystalline PZT thin films and (001)/(100) epitaxial PZT thin films were deposited on (111)Pt/Ti/Si and (001)Pt/MgO substrates, respectively, by rf-magnetron sputtering, and their piezoelectric responses owing to intrinsic and extrinsic effects were examined. The direct and converse |e31,f| values of the polycrystalline PZT thin films were calculated as 6.4 and 11.5-15.0 C/m2, respectively, whereas those of the epitaxial PZT thin films were calculated as 3.4 and 4.6-4.8 C/m2, respectively. The large |e31,f| of the converse piezoelectric property of the polycrystalline PZT thin films is attributed to extrinsic piezoelectric effects. Furthermore, the polycrystalline PZT thin films show a clear nonlinear piezoelectric contribution, which is the same as the Rayleigh-like behavior reported in bulk PZT. In contrast, the epitaxial PZT thin films on the MgO substrate show a piezoelectric response owing to the intrinsic and linear extrinsic effects, and no nonlinear contribution was observed.

  8. Factors controlling the microstructure of Ce0.9Gd0.1O2-δ films in pulsed laser deposition process

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Döbeli, M.

    2010-01-01

    Films of Ce0.9Gd0.1O2-delta (CGO10) are prepared at a range of conditions by pulsed laser deposition (PLD) on a single crystal Si (100) and MgO (100), and on a polycrystalline Pt/MgO (100) substrate. The relationship between the film microstructure, crystallography, chemical composition and PLD p...

  9. Preparation and characterization of SnO2 thin film by chemical bath deposition method for solar cell application

    International Nuclear Information System (INIS)

    Wan Mohd Zin Wan Yunus; Saeideh Ebrahimiasl; Anuar Kassim

    2009-01-01

    Full text: Tin oxide thin films were synthesized by chemical bath deposition method on glass substrate .The as-deposited thin films were characterized for compositional, structural, surface morphological, optical and electrical properties. The X-ray diffraction patterns of the sample indicate that all samples are polycrystalline structure. AFM images show that the films consist of small uniform grains and are free of pinholes. (author)

  10. Thermal processing of polycrystalline NiTi shape memory alloys

    International Nuclear Information System (INIS)

    Frick, Carl P.; Ortega, Alicia M.; Tyber, Jeffrey; Maksound, A.El.M.; Maier, Hans J.; Liu Yinong; Gall, Ken

    2005-01-01

    The objective of this study is to examine the effect of heat treatment on polycrystalline Ti-50.9 at.% Ni in hot-rolled and cold-drawn states. In particular, we examine microstructure, transformation temperatures as well as mechanical behavior in terms of both uniaxial monotonic testing and instrumented Vickers micro-indentation. The results constitute a fundamental understanding of the effect of heat treatment on thermal/stress-induced martensite and resistance to plastic flow in NiTi, all of which are critical for optimizing the mechanical properties. The high temperature of the hot-rolling process caused recrystallization, recovery, and hindered precipitate formation, essentially solutionizing the NiTi. The subsequent cold-drawing-induced a high density of dislocations and martensite. Heat treatments were carried out on hot-rolled, as well as, hot-rolled then cold-drawn materials at various temperatures for 1.5 h. Transmission Electron Microscopy observations revealed that Ti 3 Ni 4 precipitates progressively increased in size and changed their interface with the matrix from being coherent to incoherent with increasing heat treatment temperature. Accompanying the changes in precipitate size and interface coherency, transformation temperatures were observed to systematically shift, leading to the occurrence of the R-phase and multiple-stage transformations. Room temperature stress-strain tests illustrated a variety of mechanical responses for the various heat treatments, from pseudoelasticity to shape memory. The changes in stress-strain behavior are interpreted in terms of shifts in the primary martensite transformation temperatures, rather then the occurrence of the R-phase transformation. The results confirm that Ti 3 Ni 4 precipitates can be used to elicit a desired isothermal stress-strain behavior in polycrystalline NiTi. Instrumented micro-indention tests revealed that Martens (Universal) Hardness values are more dependent on the resistance to dislocation

  11. Polycrystalline thin-film TiO2/Se solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Nakada, T; Kunioka, A

    1985-07-01

    A new type of selenium solar cell with a titanium dioxide (TiO2)/Se heterojunction has been fabricated by low-cost process.An efficiency of 5.01 percent under AM 1.5 illumination (100 mW/sq cm) has been achieved without antireflection coatings. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 10.8 mA/sq cm, 0.884 V, and 0.525, respectively.The efficiency is the highest among Se-based solar cells reported to date. These cells also have extremely high spectral response at short wavelengths, resulting in efficiencies of 11-13 percent under fluorescent light (500 lux). 10 references.

  12. Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

    Science.gov (United States)

    Kakinuma, Hiroaki; Mohri, Mikio; Tsuruoka, Taiji

    1994-01-01

    We have investigated phosphorus doping using an electron cyclotron resonance (ECR) plasma, for application to the poly-Si driving circuits of liquid crystal displays or image sensors. The PH3/He was ionized and accelerated to poly-Si and c-Si substrates with a self bias of -220 V. The P concentration, as detected by secondary ion mass spectroscopy (SIMS), is ˜5×1021 cm-3 at the surface, which decayed to ˜1017 cm-3 within 50 100 nm depth. The surface is found to be etched during doping. The etching is restored by adding a small amount of SiH4 and the sheet resistance R s decreases. The optimized as-irradiated R s is ˜ 1× 105 Ω/\\Box and 1.7× 102 Ω/\\Box for poly-Si and (110) c-Si, respectively. The dependence of R s on the substrates and the anomalous diffusion constants derived from SIMS are also discussed.

  13. Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate

    Czech Academy of Sciences Publication Activity Database

    Ogane, A.; Honda, Shinya; Uraoka, Y.; Fuyuki, T.; Fejfar, Antonín; Kočka, Jan

    2009-01-01

    Roč. 311, č. 3 (2009), s. 789-793 ISSN 0022-0248 Institutional research plan: CEZ:AV0Z10100521 Keywords : crystallites * defects * chemical vapor deposition processes * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.534, year: 2009

  14. Raman spectra of Au nanoparticles in polycrystalline LiF film

    International Nuclear Information System (INIS)

    Kurbatova, N.V.; Galyautdinov, M.F.; Stepanov, A.L.; Ivanov, N.A.; Kolesnikov, S.S.; Papernyj, V.L.

    2011-01-01

    The modification of the size of gold nanoparticles in LiF matrix during laser annealing was studied fort he first time by Raman spectroscopy. Laser annealing was carried out at the wavelength of the plasmon absorption of gold nanoparticles. The experimental spectra were compared with the calculated modes of in-phase bending vibrations in nanoparticles. The observed effects were discussed from the standpoint of the size quantization of acoustic vibrations in nanostructures. (authors)

  15. Growth and characterization of polycrystalline Ge{sub 1-x}C{sub x} by reactive pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, M.P., E-mail: mayrap@fisica.uh.cu [Instituto de Ciencia y Tecnologia de Materiales, Zapata y G, P.O. Box 10400, Universidad de La Habana (Cuba); Farias, M.H.; Castillon, F.F.; Diaz, Jesus A.; Avalos, M. [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Km 107 Carretera Tijuana-Ensenada, C.P. 22800 Ensenada, Baja California (Mexico); Ulloa, L. [Universidad de Guadalajara, (CUCEI) Blvd. Marcelino Garcia Barragan 1421, C.P. 44430 Guadalajara, Jalisco (Mexico); Gallegos, J.A.; Yee-Madeiros, H. [Escuela Superior de Fisica y Matematicas-IPN, UP' ALM' , Colonia Lindavista 07738 (Mexico)

    2011-03-15

    Polycrystalline thin films of Ge-C were grown on Si (1 1 1) substrates by means of reactive pulsed laser deposition with methane pressure of 100 mTorr. Effect substrate temperature, T{sub s}, on C incorporation to substitutional sites (x) in Ge{sub 1-x}C{sub x} was investigated systematically by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyzes. The substrate temperatures were ranging from 250 to 400 deg. C. The substitutional C composition x in the films by XRD were estimated using the Vegard's linear law. The maximum value of x calculated by XRD was 0.032 for T{sub s} of 350 deg. C. The position of the C 1s peak at 283.4 eV in the XPS spectrum confirmed the germanium-carbon alloys. XRD measurements indicated that x increased with T{sub s} from 250 deg. C to 350 deg. C. At T{sub s} = 400 deg. C, the estimation of x was lowered. However, the C content calculated by XPS analyzes increased with T{sub s} being more these values than substitutional C composition x. XPS and XRD analyzes demonstrate that the remaining C atoms are incorporated to interstitial sites. The use of the T{sub s} plays important roles in the incorporation of substitutional C and in restraining C-cluster formation in the reactive pulsed laser deposition growth of Ge-C/Si.

  16. Effect of composition on properties of In2O3-Ga2O3 thin films

    Science.gov (United States)

    Demin, I. E.; Kozlov, A. G.

    2017-06-01

    The In2O3-Ga2O3 mixed oxide polycrystalline thin films with various ratios of components were obtained by pulsed laser deposition. The effect of films composition on surface morphology, electrophysical and gas sensing properties and energies of adsorption and desorption of combustible gases was studied. The films with50%In2O3-50%Ga2O3 composition showed maximum gas response (˜25 times) combined with minimum optimal working temperature (˜530 °C) as compared with the other films. The optical transmittance of the films in visible range was investigated. For 50%In2O3-50%Ga2O3 films, the transmittance is higher in comparison with the other films. The explanation of the dependency of films behaviors on their composition was presented.The In2O3-Ga2O3 films were assumed to have perspectives as gas sensing material for semiconducting gas sensors.

  17. Surface and magnetic characteristics of Ni-Mn-Ga/Si (100) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Vinodh; Pandyan, R. Kodi; Mahendran, M., E-mail: manickam-mahendran@tce.edu, E-mail: perialangulam@gmail.com [Smart Materials Lab, Department of Physics, Thiagarajar College of Engineering, Madurai – 625 015 (India); Raja, M. Manivel [Defence Metallurgical Research Laboratory, Hyderabad – 500 058 (India); Pandi, R. Senthur [School of Advanced Sciences, VIT University, Vellore – 632 014 (India)

    2016-05-23

    Polycrystalline Ni-Mn-Ga thin films have been deposited on Si (100) substrate with different film thickness. The influence of film thickness on the phase structure and magnetic domain of the films has been examined by scanning electron microscope, atomic force microscopy and magnetic force microscopy. Analysis of structural parameters indicates that the film at lower thickness exhibits the coexistence of both austenite and martensite phase, whereas at higher thickness L1{sub 2} cubic non magnetic phase is noticed. The grains size and the surface roughness increase along with the film thickness and attain the maximum of 45 nm and 34.96 nm, respectively. At lower film thickness, the magnetic stripe domain is found like maze pattern with dark and bright images, while at higher thickness the absence of stripe domains is observed. The magnetic results reveal that the films strongly depend on their phase structure and microstructure which influence by the film thickness.

  18. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  19. Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Patric Alfons

    2007-07-20

    A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

  20. Synthesis and nonlinear optical property of polycrystalline MnTeMoO{sub 6}

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Chengguo [Yibin University, Key Laboratory of Computational Physics of Sichuan Province, Yibin (China); Yibin University, School of Physics and Electronic Engineering, Yibin (China)

    2017-04-15

    Polycrystalline MnTeMoO{sub 6} powder has been synthesized by a new approach that MnO{sub 2} is used as the manganese source. The transformation mechanism of manganese ions in the new approach has been discussed. The nonlinear optical property of polycrystalline MnTeMoO{sub 6} has been investigated, and compared with single-crystalline samples. The transformation Mn{sup 4+} → Mn{sup 2+} may be formed directly without stable intermediates, and TeO{sub 2} may serve as catalyst. The SHG response of polycrystalline MnTeMoO{sub 6} powder is worse than that of single-crystalline powder in the same particle size distribution as its pseudo-size. The results indicate that it should pay special attention with the pseudo-size of polycrystalline powder when the potential nonlinear optical materials are screened by powder second harmonic generation measurements. (orig.)