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Sample records for active pixel sensors

  1. Active Pixel Sensors: Are CCD's Dinosaurs?

    Science.gov (United States)

    Fossum, Eric R.

    1993-01-01

    Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

  2. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  3. Active pixel sensors with substantially planarized color filtering elements

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

    1999-01-01

    A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

  4. Performance of active edge pixel sensors

    CERN Document Server

    Bomben, Marco; Bagolini, Alvise; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; D'Eramo, Louis; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola; Rummler, Andre; Weingarten, Jens

    2017-01-01

    this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit efficiency also at the detector edge, even in presence of guard rings.

  5. Characterization of active CMOS pixel sensors on high resistive substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

    2016-07-01

    Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  6. On drift fields in CMOS monolithic active pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Deveaux, Michael [Goethe-Universitaet, Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2016-07-01

    CMOS Monolithic Active Pixel Sensors (MAPS) combine an excellent spatial resolution of few μm with a very low material budget of 0.05% X{sub 0}. To extend their radiation tolerance to the level needed for future experiments like e.g. CBM, it is regularly considered to deplete their active volume. We discuss the limits of this strategy accounting for the specific features of the sensing elements of MAPS. Moreover, we introduce an alternative approach to generate the drift fields needed to provoke a faster charge collection by means of doping gradients.

  7. Optimization of amplifiers for monolithic active pixel sensors

    CERN Document Server

    Dorokhov, A

    2007-01-01

    High precision particle tracking and imaging applications require position sensitive detectors with high granularity, good radiation tolerance, low material budget, fast read-out and low power dissipation. Monolithic Active Pixel Sensors (MAPS) [1] fabricated in a standard microelectronic technology provide an attractive solution for these demanding applications. The signal-to-noise ratio of MAPS can be increased by using in-pixel ampli ers. The compromise between speed, noise, gain and power consumption has to be achieved in the design of the ampli er. The charge collection ef ciency and total capacitance at the ampli er input is in uenced by the size of charge collecting diode. Therefore, in order to achieve better MAPS performances, both the geometry of the charge collecting diode and the ampli er design have to be considered in the optimization process. In this work different ampli er designs and geometries of the charge collecting diode are proposed. The characterization measurements of the ampli ers fab...

  8. Charged Particle Detection using a CMOS Active Pixel Sensor

    CERN Document Server

    Matis, H S; Kleinfelder, S A; Rai, G; Retière, F; Ritter, H G; Singh, K; Wurzel, S E; Wieman, H H; Yamamoto, E

    2003-01-01

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe55 exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

  9. A CMOS Active Pixel Sensor for Charged Particle Detection

    Energy Technology Data Exchange (ETDEWEB)

    Matis, Howard S.; Bieser, Fred; Kleinfelder, Stuart; Rai, Gulshan; Retiere, Fabrice; Ritter, Hans George; Singh, Kunal; Wurzel, Samuel E.; Wieman, Howard; Yamamoto, Eugene

    2002-12-02

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

  10. High-sensitivity active pixel sensor with variable threshold photodetector

    Science.gov (United States)

    Jo, Sung-Hyun; Bae, Myunghan; Choi, Byoung-Soo; Lyu, Hong-Kun; Shin, Jang-Kyoo

    2015-05-01

    A novel high-sensitivity active pixel sensor (APS) with a variable threshold photodetector has been presented and for the first time, a simple SPICE model for the variable threshold photodetector is presented. Its SPICE model is in good agreement with measurements and is more simpler than the conventional model. The proposed APS has a gate/body-tied PMOSFET-type photodetector with an overlapping control gate that makes it possible to control the sensitivity of the proposed APS. It is a hybrid device composed of a metal-oxide-semiconductor field-effect transistor (MOSFET), a lateral bipolar junction transistor (BJT) and a vertical BJT. Using sufficient overlapping control gate bias to operate the MOSFET in inversion mode, the variable threshold photodetector allows for increasing the photocurrent gain by 105 at low light intensities when the control gate bias is -3 V. Thus, the proposed APS with a variable threshold photodetector has better low-light-level sensitivity than the conventional APS operating mode, and it has a variable sensitivity which is determined by the control gate bias. The proposed sensor has been fabricated by using 0.35 μm 2-poly 4-metal standard complementary MOS (CMOS) process and its characteristics have been evaluated.

  11. Active pixel sensors : The sensor of choice for future space applications

    NARCIS (Netherlands)

    Leijtens, J.; Theuwissen, A.; Rao, P.R.; Wang, X.; Xie, N.

    2007-01-01

    It is generally known that active pixel sensors (APS) have a number of advantages over CCD detectors if it comes to cost for mass production, power consumption and ease of integration. Nevertheless, most space applications still use CCD detectors because they tend to give better performance and have

  12. A Wafer scale active pixel CMOS image sensor for generic x-ray radiology

    Science.gov (United States)

    Scheffer, Danny

    2007-03-01

    This paper describes a CMOS Active Pixel Image Sensor developed for generic X-ray imaging systems using standard CMOS technology and an active pixel architecture featuring low noise and a high sensitivity. The image sensor has been manufactured in a standard 0.35 μm technology using 8" wafers. The resolution of the sensor is 3360x3348 pixels of 40x40 μm2 each. The diagonal of the sensor measures little over 190 mm. The paper discusses the floor planning, stitching diagram, and the electro-optical performance of the sensor that has been developed.

  13. Active-Pixel Image Sensor With Analog-To-Digital Converters

    Science.gov (United States)

    Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

    1995-01-01

    Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

  14. First Results from Cherwell, a Monolithic Active Pixel Sensor for Particle Physics

    CERN Document Server

    Nooney, Tamsin; Borri, Marcello; Crooks, Jamie; Headspith, Jon; Inguglia, Gianluca; Kolya, Scott; Lazarus, Ian; Lemmon, Roy; Mylroie-Smith, James; Turchetta, Renato; Velthuis, Jaap; Wilson, Fergus

    2014-01-01

    Cherwell is a CMOS Monolithic Active Pixel Sensor (MAPS) developed for digital calorimetry and charged particle tracking applications. Here, we outline the initial tests carried out to charac- terise the performance of Cherwell, give details of the test beam carried out at CERN and include the first results from this analysis. Three variations of the chip were tested; Type A, a high re- sistivity, low noise sensor, Type B, a standard resisivity, low noise sensor and Type C, a standard resistivity, standard noise sensor. The sensors yield an average RMS noise value per pixel of 9.6 e

  15. 4T CMOS Active Pixel Sensors under Ionizing Radiation

    NARCIS (Netherlands)

    Tan, J.

    2013-01-01

    This thesis investigates the ionizing radiation effects on 4T pixels and the elementary in-pixel test devices with regard to the electrical performance and the optical performance. In addition to an analysis of the macroscopic pixel parameter degradation, the radiation-induced degradation mechanisms

  16. Autonomous star tracker based on active pixel sensors (APS)

    Science.gov (United States)

    Schmidt, U.

    2017-11-01

    Star trackers are opto-electronic sensors used onboard of satellites for the autonomous inertial attitude determination. During the last years, star trackers became more and more important in the field of the attitude and orbit control system (AOCS) sensors. High performance star trackers are based up today on charge coupled device (CCD) optical camera heads. The Jena-Optronik GmbH is active in the field of opto-electronic sensors like star trackers since the early 80-ties. Today, with the product family ASTRO5, ASTRO10 and ASTRO15, all marked segments like earth observation, scientific applications and geo-telecom are supplied to European and Overseas customers. A new generation of star trackers can be designed based on the APS detector technical features. The measurement performance of the current CCD based star trackers can be maintained, the star tracker functionality, reliability and robustness can be increased while the unit costs are saved.

  17. Characterization of Pixel Sensors

    CERN Document Server

    Oliveira, Felipe Ferraz

    2017-01-01

    It was commissioned at CERN ATLAS pixel group a fluorescence setup for characterization of pixel sensors. The idea is to measure the energies of different targets to calibrate your sensor. It was measured four matrices (80, 95, 98 and 106) of the Investigator1 sensor with different deep PW using copper, iron and titanium as target materials. The matrix 80 has a higher gain (0.065 ± 0.002) and matrix 106 has a better energy resolution (0.05 ± 0.04). The noise of the setup is around 3.6 mV .

  18. Development of a versatile readout and test system and characterization of a capacitively coupled active pixel sensor

    Energy Technology Data Exchange (ETDEWEB)

    Janssen, Jens; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany); Peric, Ivan [Karlsruher Institut fuer Technologie, Karlsruhe (Germany); Collaboration: ATLAS-Collaboration

    2015-07-01

    With the availability of high voltage and high resistivity CMOS processes, active pixel sensors are becoming increasingly interesting for radiation detection in high energy physics experiments. Although the pixel signal-to-noise ratio and the sensor radiation tolerance were improved, active pixel sensors cannot yet compete with state-of-the-art hybrid pixel detector in a high radiation environment. Hence, active pixel sensors are possible candidates for the outer tracking detector in HEP experiments where production cost plays a role. The investigation of numerous prototyping steps and different technologies is still ongoing and requires a versatile test and readout system, which will be presented in this talk. A capacitively coupled active pixel sensor fabricated in AMS 180 nm high voltage CMOS process is investigated. The sensor is designed to be glued to existing front-end pixel readout chips. Results from the characterization are presented in this talk.

  19. Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)

    Energy Technology Data Exchange (ETDEWEB)

    Cohen, M.; David, J.P. [ONERA-CERT/, 31 - Toulouse (France)

    1999-07-01

    Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.

  20. Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

    2003-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

  1. A three-phase time-correlation image sensor using pinned photodiode active pixels

    Science.gov (United States)

    Han, Sangman; Iwahori, Tomohiro; Sawada, Tomonari; Kawahito, Shoji; Ando, Shigeru

    2010-01-01

    A time correlation (TC) image sensor is a device that produces 3-phase time-correlated signals between the incident light intensity and three reference signals. A conventional implementation of the TC image sensor using a standard CMOS technology works at low frequency and with low sensitivity. In order to achieve higher modulation frequency and high sensitivity, the TC image sensor with a dual potential structure using a pinned diode is proposed. The dual potential structure is created by changing the impurity doping concentration in the two different potential regions. In this structure, high-frequency modulation can be achieved, while maintaining a sufficient light receiving area. A prototype TC image sensor with 366×390pixels is implemented with 0.18-μm 1P4M CMOS image sensor technology. Each pixel with the size of 12μm×12μm has one pinned photodiode with the dual potential structure, 12 transistors and 3capacitors to implement three-parallel-output active pixel circuits. A fundamental operation of the implemented TC sensor is demonstrated.

  2. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

    Science.gov (United States)

    Pernegger, H.; Bates, R.; Buttar, C.; Dalla, M.; van Hoorne, J. W.; Kugathasan, T.; Maneuski, D.; Musa, L.; Riedler, P.; Riegel, C.; Sbarra, C.; Schaefer, D.; Schioppa, E. J.; Snoeys, W.

    2017-06-01

    The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

  3. Noise characteristics of stacked CMOS active pixel sensor for charged particles

    Energy Technology Data Exchange (ETDEWEB)

    Kunihiro, Takuya E-mail: kunihiro@geo.titech.ac.jp; Nagashima, Kazuhide; Takayanagi, Isao; Nakamura, Junichi; Kosaka, Koji; Yurimoto, Hisayoshi

    2001-09-11

    The noise characteristics of a stacked CMOS active pixel sensor (SCAPS) for incident charged particles have been analyzed under 4.5 keV Si{sup +} ion irradiation. The source of SCAPS dark current was found to change from thermal to electron leakage with decreasing device temperature. Leakage current at charge integration part in a pixel has been reduced to 0.1 electrons s{sup -1} at 77 K. The incident ion signals are computed by subtracting reset frame values from each frame using a non-destructive readout operation. With increase of irradiated ions, the dominant noise source changed from read noise, and shot noise from the incident ions, to signal frame fixed-pattern noise from variations in sensitivity between pixels. Pixel read noise is equivalent to ten incident ions. The charge of an incident ion is converted to 1.5 electrons in the pixel capacitor. Shot noise corresponds to the statistical fluctuation of incident ions. Signal frame fixed-pattern noise is 0.7% of the signal. By comparing full well conditions to noise floor, a dynamic range of 80 dB is achieved. SCPAS is useful as a two-dimensional detector for microanalyses such as stigmatic secondary ion mass spectrometry.

  4. Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

    CERN Document Server

    Terzo, Stefano; Nisius, R.; Paschen, B.

    2014-01-01

    Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\\mu$m, produced at CiS, and 100-200 $\\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The perfo...

  5. Small pixel infrared sensor technology

    Science.gov (United States)

    Caulfield, John; Curzan, Jon

    2017-02-01

    We report on product maturation of small pixel high definition high charge capacity 2.4 Mpixel MWIR Infrared Focal Plane Arrays. This high definition (HD) FPA utilizes a small 5 um pitch pixel size which enables near Nyquist limited sampling with by the optical system of many IR lenses. These smaller sub diffraction pitch pixels enable improved sensitivity and resolution resulting in clear, crisp high contrast imaging with excellent IFOVs even with small focal length lenses. The small pixel IR sensor allows the designer to trade off field of view, MTF, optics F/# to obtain a more compact and high performance IR sensor. This enables lower size, power and weight reductions of the entire IR Sensor System. The highly sensitive MWIR small pixel HD FPA has the capability to detect dimmer signals at longer ranges than previously demonstrated.

  6. Radiation damage caused by cold neutrons in boron doped CMOS active pixel sensors

    Science.gov (United States)

    Linnik, B.; Bus, T.; Deveaux, M.; Doering, D.; Kudejova, P.; Wagner, F. M.; Yazgili, A.; Stroth, J.

    2017-05-01

    CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC and the tracker of ATLAS. In those applications, the sensors are exposed to sizeable radiation doses. While the tolerance of MAPS to ionizing radiation and fast hadrons is well known, the damage caused by low energy neutrons was not studied so far. Those slow neutrons may initiate nuclear fission of 10B dopants found in the B-doped silicon active medium of MAPS. This effect was expected to create an unknown amount of radiation damage beyond the predictions of the NIEL (Non Ionizing Energy Loss) model for pure silicon. We estimate the impact of this effect by calculating the additional NIEL created by this fission. Moreover, we show first measured data for CMOS sensors which were irradiated with cold neutrons. The empirical results contradict the prediction of the updated NIEL model both, qualitatively and quantitatively: the sensors irradiated with slow neutrons show an unexpected and strong acceptor removal, which is not observed in sensors irradiated with MeV neutrons.

  7. Advanced monolithic active pixel sensors for tracking, vertexing and calorimetry with full CMOS capability

    Science.gov (United States)

    Stanitzki, M.; SPiDeR Collaboration, www. spider. ac. uk

    2011-09-01

    We present test results from the "TPAC" and "F ORTIS" sensors produced using the 180 nm CMOS INMAPS process. The TPAC sensor has a 50 μm pixel size with advanced in-pixel electronics. Although TPAC was developed for digital electromagnetic calorimetry, the technology can be readily extended to tracking and vertexing applications where highly granular pixels with in-pixel intelligence are required. By way of example, a variant of the TPAC sensor has been proposed for the Super B vertex detector. The F ORTIS sensor is a prototype with several pixel variants to study the performance of a four transistors (4T) architecture and is the first sensor of this type tested for particle physics applications. TPAC and F ORTIS sensors have been fabricated with some of the processing innovations available in INMAPS such as deep p-wells and high-resistivity epitaxial layers. The performance of these sensor variants has been measured both in the laboratory and at test beams and results showing significant improvements due to these innovations are presented. We have recently manufactured the "C HERWELL" sensor, building on the experience with both TPAC and F ORTIS and making use of the 4T approach. C HERWELL is designed for tracking and vertexing and has an integrated ADC and targets very low-noise performance. The principal features of C HERWELL are described.

  8. Design and testing of monolithic active pixel sensors for charged particle tracking

    CERN Document Server

    Deptuch, G; Claus, G; Colledani, C; Dulinski, W; Gornushkin, Y; Husson, D; Riester, J L; Winter, M

    2002-01-01

    A monolithic active pixel sensor (MAPS) for charged particle tracking based on a novel detector structure has been proposed, simulated, fabricated and tested. This detector is inseparable from the readout electronics, since both of them are integrated on the same, low- resistivity silicon wafer standard for a CMOS process. The individual pixel is comprised of only three MOS transistors and a photodiode collecting the charge created in the thin undepleted epitaxial layer. This approach provides a low cost, high resolution and thin device with the whole detector area sensitive to radiation (100% fill factor). Detailed device simulations using the ISE-TCAD package have been carried out in order to study the charge. collection mechanism and to validate the proposed idea. In order to demonstrate viability of the technique, two prototype chips were successively fabricated using 0.6 mu m and 0.35 mu m CMOS processes. Both chips have been fully characterized. The pixel conversion gain has been calibrated using a /sup...

  9. 12-inch-wafer-scale CMOS active-pixel sensor for digital mammography

    Science.gov (United States)

    Heo, Sung Kyn; Kosonen, Jari; Hwang, Sung Ha; Kim, Tae Woo; Yun, Seungman; Kim, Ho Kyung

    2011-03-01

    This paper describes the development of an active-pixel sensor (APS) panel, which has a field-of-view of 23.1×17.1 cm and features 70-μm-sized pixels arranged in a 3300×2442 array format, for digital mammographic applications. The APS panel was realized on 12-inch wafers based on the standard complementary metal-oxide-semiconductor (CMOS) technology without physical tiling processes of several small-area sensor arrays. Electrical performance of the developed panel is described in terms of dark current, full-well capacity and leakage current map. For mammographic imaging, the optimized CsI:Tl scintillator is experimentally determined by being combined with the developed panel and analyzing im aging characteristics, such as modulation-transfer function, noise-power spectrum, detective quantum efficiency, image l ag, and contrast-detail analysis by using the CDMAM 3.4 phantom. With these results, we suggest that the developed CMOS-based detector can be used for conventional and advanced digital mammographic applications.

  10. Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

    2005-01-01

    Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

  11. First tests of CHERWELL, a Monolithic Active Pixel Sensor: A CMOS Image Sensor (CIS) using 180 nm technology

    Energy Technology Data Exchange (ETDEWEB)

    Mylroie-Smith, James, E-mail: j.mylroie-smith@qmul.ac.uk [Queen Mary, University of London (United Kingdom); Kolya, Scott; Velthuis, Jaap [University of Bristol (United Kingdom); Bevan, Adrian; Inguglia, Gianluca [Queen Mary, University of London (United Kingdom); Headspith, Jon; Lazarus, Ian; Lemon, Roy [Daresbury Laboratory, STFC (United Kingdom); Crooks, Jamie; Turchetta, Renato; Wilson, Fergus [Rutherford Appleton Laboratory, STFC (United Kingdom)

    2013-12-11

    The Cherwell is a 4T CMOS sensor in 180 nm technology developed for the detection of charged particles. Here, the different test structures on the sensor will be described and first results from tests on the reference pixel variant are shown. The sensors were shown to have a noise of 12 e{sup −} and a signal to noise up to 150 in {sup 55}Fe.

  12. The ATLAS Silicon Pixel Sensors

    CERN Document Server

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  13. Study of Monolithic Active Pixel Sensors for the Upgrade of the ALICE Inner Tracking System

    CERN Document Server

    Suljic, Miljenko

    The upgrade of the ALICE vertex detector, the Inner Tracking System (ITS), is scheduled to be installed during the next long shutdown period (LS2 in 2019-2020) of the CERN Large Hadron Collider (LHC). The current ITS will be replaced by seven concentric layers of Monolithic Active Pixel Sensors (MAPS) with total active surface of $\\sim$10 m$^2$, thus making ALICE the first LHC experiment implementing MAPS detector technology on a large scale. The scope of this thesis is twofold; to report on the activity on the development and the characterisation of a MAPS for the ITS upgrade and to study the charge collection process using a first-principles Monte Carlo simulation. The performance of a MAPS depends on a large number of design and operational parameters, such as collection diode geometry, reverse bias voltage, and epitaxial layer thickness. I have studied this dependence by measuring the INVESTIGATOR chip response to X-rays emitted by an $^{55}$Fe source and to minimum ionising particles. In particular, I ha...

  14. Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

    CERN Document Server

    Ristic, Branislav

    2016-09-21

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

  15. Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    Science.gov (United States)

    Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

    2017-03-01

    High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

  16. A monolithic active pixel sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany)

    2016-07-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-180 nm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180 nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.

  17. Planar pixel sensors in commercial CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  18. Analysis of test beam data of ALPIDE, the Monolithic Active Pixel Sensor (MAPS) for the ALICE ITS upgrade

    CERN Document Server

    Lazareva, Tatiana

    2017-01-01

    The ALICE experiment has scheduled a major upgrade of its experimen- tal apparatus for the Long Shutdown 2 of LHC in 2019-2020. Within this enterprise, CERN is strongly involved in the development of a novel Inner Tracking System (ITS). The ITS will be based on Monolithic Active Pixel Sensors (MAPS), a cutting-edge technology that will allow to improve the detector performance signicantly. The nal sensor, called ALPIDE, is in production since December 2016. This project is focused on the characterization of irradiated ALPIDE sensors.

  19. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-07-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

  20. X-RAY ACTIVE MATRIX PIXEL SENSORS BASEDON J-FET TECHNOLOGY DEVELOPED FOR THE LINAC COHERENT LIGHT SOURCE.

    Energy Technology Data Exchange (ETDEWEB)

    CARINI,G.A.; CHEN, W.; LI, Z.; REHAK, P.; SIDDONS, D.P.

    2007-10-29

    An X-ray Active Matrix Pixel Sensor (XAMPS) is being developed for recording data for the X-ray Pump Probe experiment at the Linac Coherent Light Source (LCLS). Special attention has to be paid to some technological challenges that this design presents. New processes were developed and refined to address problems encountered during previous productions of XAMPS. The development of these critical steps and corresponding tests results are reported here.

  1. Test beam results of a depleted monolithic active pixel sensor (DMAPS) prototype

    Energy Technology Data Exchange (ETDEWEB)

    Obermann, Theresa; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Bonn Univ. (Germany); Schwenker, Benjamin [Goettingen Univ. (Germany); Collaboration: ATLAS Pixel-Collaboration

    2016-07-01

    New monolithic detector concepts are currently being explored for future particle physics experiments, in particular for the upgrade of the ATLAS detector. Common to monolithic pixel detectors is the integration of the front-end circuitry and the sensor on the same silicon substrate. The DMAPS concept makes use of high resistive silicon as substrate. It enables the application of a high bias voltage to create a drift field for the charge collection in the sensor part as well as the full usage of CMOS logic in the same piece of silicon. DMAPS prototypes from several foundries are available since three years and have been extensively characterized in the lab. In this talk, results of test beam campaigns, with neutron irradiated prototypes implemented in the ESPROS process, are presented.

  2. Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

    Energy Technology Data Exchange (ETDEWEB)

    Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

    2015-07-01

    CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

  3. ATLAS pixel detector electronics and sensors

    Energy Technology Data Exchange (ETDEWEB)

    Aad, G; Bernardet, K [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Ackers, M; Barbero, M B [Physikalisches Institut der Universitaet Bonn, Nussallee 12, D - 53115 Bonn (Germany); Alberti, F A; Aleppo, M; Alimonti, G; Andreani, A; Andreazza, A [INFN Milano, via Celoria 16, IT - 20133 Milano (Italy); Alonso, J; Anderssen, E C; Arguin, J-F; Beringer, J [Lawrence Berkeley National Laboratory and University of California, Physics Division MS50B-6227, 1 Cyclotron Road, Berkeley, CA 94720, United States of America (United States); Arms, K E [Ohio State University, 191 West Woodruff Ave, Columbus, OH 43210-1117, United States of America (United States); Barberis, D; Beccherle, R B [INFN Genova, via Dodecaneso 33, IT - 16146 Genova (Italy); Bazalova, M [Institute of Physics, Academy of Sciences of the Czech Republic Na Slovance 2, CZ - 18221 Praha 8 (Czech Republic); Becks, K H; Bellina, F [Bergische Universitaet, Fachbereich C, Physik Postfach 100127, Gauss-Strasse 20, D- 42097 Wuppertal (Germany); Behera, P K [203 VAN ALLEN HALL, IOWA CITY IA 52242-1479, United States of America (United States)], E-mail: MGGilchriese@lbl.gov (and others)

    2008-07-15

    The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.

  4. A Design of a New Column-Parallel Analog-to-Digital Converter Flash for Monolithic Active Pixel Sensor

    OpenAIRE

    Chakir, Mostafa; Akhamal, Hicham; Qjidaa, Hassan

    2017-01-01

    The CMOS Monolithic Active Pixel Sensor (MAPS) for the International Linear Collider (ILC) vertex detector (VXD) expresses stringent requirements on their analog readout electronics, specifically on the analog-to-digital converter (ADC). This paper concerns designing and optimizing a new architecture of a low power, high speed, and small-area 4-bit column-parallel ADC Flash. Later in this study, we propose to interpose an S/H block in the converter. This integration of S/H block increases the...

  5. Analysis of test beam data of ALPIDE, the final Monolithic Active Pixel Sensor (MAPS) prototype for the ALICE ITS upgrade

    CERN Document Server

    Emriskova, Natalia

    2017-01-01

    The ALICE collaboration is currently preparing a major upgrade of its apparatus, planned for installation during the second long shutdown of the Large Hadron Collider in 2019-20. The main pillar of the upgrade is the replacement of the current Inner Tracking System (ITS) with a new, low-material, high resolution silicon pixel detector, made of Monolithic Active Pixel Sensors (MAPS). This technology, combining front-end circuitry and sensitive layer in a single device, will lead to a higher granularity of the detector and therefore a better pointing resolution. The silicon pixel chips, called ALPIDEs, developed specifically for the new ITS, are currently characterized using test beams. A part of this characterization is presented in this work. The project involves the very first analysis of test beam data with inclined tracks. The tested ALPIDE is rotated with respect to the beam, hence the particles cross the chip with an inclined incidence angle. The influence of these rotations on the efficiency profile...

  6. A Design of a New Column-Parallel Analog-to-Digital Converter Flash for Monolithic Active Pixel Sensor.

    Science.gov (United States)

    Chakir, Mostafa; Akhamal, Hicham; Qjidaa, Hassan

    2017-01-01

    The CMOS Monolithic Active Pixel Sensor (MAPS) for the International Linear Collider (ILC) vertex detector (VXD) expresses stringent requirements on their analog readout electronics, specifically on the analog-to-digital converter (ADC). This paper concerns designing and optimizing a new architecture of a low power, high speed, and small-area 4-bit column-parallel ADC Flash. Later in this study, we propose to interpose an S/H block in the converter. This integration of S/H block increases the sensitiveness of the converter to the very small amplitude of the input signal from the sensor and provides a sufficient time to the converter to be able to code the input signal. This ADC is developed in 0.18  μ m CMOS process with a pixel pitch of 35  μ m. The proposed ADC responds to the constraints of power dissipation, size, and speed for the MAPS composed of a matrix of 64 rows and 48 columns where each column ADC covers a small area of 35 × 336.76  μ m 2 . The proposed ADC consumes low power at a 1.8 V supply and 100 MS/s sampling rate with dynamic range of 125 mV. Its DNL and INL are 0.0812/-0.0787 LSB and 0.0811/-0.0787 LSB, respectively. Furthermore, this ADC achieves a high speed more than 5 GHz.

  7. Advanced pixel architectures for scientific image sensors

    CERN Document Server

    Coath, R; Godbeer, A; Wilson, M; Turchetta, R

    2009-01-01

    We present recent developments from two projects targeting advanced pixel architectures for scientific applications. Results are reported from FORTIS, a sensor demonstrating variants on a 4T pixel architecture. The variants include differences in pixel and diode size, the in-pixel source follower transistor size and the capacitance of the readout node to optimise for low noise and sensitivity to small amounts of charge. Results are also reported from TPAC, a complex pixel architecture with ~160 transistors per pixel. Both sensors were manufactured in the 0.18μm INMAPS process, which includes a special deep p-well layer and fabrication on a high resistivity epitaxial layer for improved charge collection efficiency.

  8. Low-power priority Address-Encoder and Reset-Decoder data-driven readout for Monolithic Active Pixel Sensors for tracker system

    Energy Technology Data Exchange (ETDEWEB)

    Yang, P., E-mail: yangping0710@126.com [Central China Normal University, Wuhan (China); Aglieri, G.; Cavicchioli, C. [CERN, 1210 Geneva 23 (Switzerland); Chalmet, P.L. [MIND, Archamps (France); Chanlek, N. [Suranaree University of Technology, Nakhon Ratchasima (Thailand); Collu, A. [University of Cagliari, Cagliari (Italy); INFN (Italy); Gao, C. [Central China Normal University, Wuhan (China); Hillemanns, H.; Junique, A. [CERN, 1210 Geneva 23 (Switzerland); Kofarago, M. [CERN, 1210 Geneva 23 (Switzerland); University of Utrecht, Utrecht (Netherlands); Keil, M.; Kugathasan, T. [CERN, 1210 Geneva 23 (Switzerland); Kim, D. [Dongguk and Yonsei University, Seoul (Korea, Republic of); Kim, J. [Pusan National University, Busan (Korea, Republic of); Lattuca, A. [University of Torino, Torino (Italy); INFN (Italy); Marin Tobon, C.A. [CERN, 1210 Geneva 23 (Switzerland); Marras, D. [University of Cagliari, Cagliari (Italy); INFN (Italy); Mager, M.; Martinengo, P. [CERN, 1210 Geneva 23 (Switzerland); Mazza, G. [University of Torino, Torino (Italy); INFN (Italy); and others

    2015-06-11

    Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. The AERD data-driven readout architecture operates the address encoding and reset decoding based on an arbitration tree, and allows us to readout only the hit pixels. Compared to the traditional readout structure of the rolling shutter scheme in Monolithic Active Pixel Sensors (MAPS), AERD can achieve a low readout time and a low power consumption especially for low hit occupancies. The readout is controlled at the chip periphery with a signal synchronous with the clock, allows a good digital and analogue signal separation in the matrix and a reduction of the power consumption. The AERD circuit has been implemented in the TowerJazz 180 nm CMOS Imaging Sensor (CIS) process with full complementary CMOS logic in the pixel. It works at 10 MHz with a matrix height of 15 mm. The energy consumed to read out one pixel is around 72 pJ. A scheme to boost the readout speed to 40 MHz is also discussed. The sensor chip equipped with AERD has been produced and characterised. Test results including electrical beam measurement are presented.

  9. A Design of a New Column-Parallel Analog-to-Digital Converter Flash for Monolithic Active Pixel Sensor

    Directory of Open Access Journals (Sweden)

    Mostafa Chakir

    2017-01-01

    Full Text Available The CMOS Monolithic Active Pixel Sensor (MAPS for the International Linear Collider (ILC vertex detector (VXD expresses stringent requirements on their analog readout electronics, specifically on the analog-to-digital converter (ADC. This paper concerns designing and optimizing a new architecture of a low power, high speed, and small-area 4-bit column-parallel ADC Flash. Later in this study, we propose to interpose an S/H block in the converter. This integration of S/H block increases the sensitiveness of the converter to the very small amplitude of the input signal from the sensor and provides a sufficient time to the converter to be able to code the input signal. This ADC is developed in 0.18 μm CMOS process with a pixel pitch of 35 μm. The proposed ADC responds to the constraints of power dissipation, size, and speed for the MAPS composed of a matrix of 64 rows and 48 columns where each column ADC covers a small area of 35 × 336.76 μm2. The proposed ADC consumes low power at a 1.8 V supply and 100 MS/s sampling rate with dynamic range of 125 mV. Its DNL and INL are 0.0812/−0.0787 LSB and 0.0811/−0.0787 LSB, respectively. Furthermore, this ADC achieves a high speed more than 5 GHz.

  10. Advanced monolithic pixel sensors using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Miyoshi, Toshinobu, E-mail: miyoshi@post.kek.jp [High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan); Arai, Yasuo [High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan); Asano, Mari [University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 (Japan); Fujita, Yowichi [High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan); Hamasaki, Ryutaro [SOKENDAI (The Graduate University for Advanced Studies), Shonan Village, Hayama 240-0193 (Japan); Hara, Kazuhiko; Honda, Shunsuke [University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 (Japan); Ikegami, Yoichi; Kurachi, Ikuo [High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan); Mitsui, Shingo [Kanazawa University, Kadoma-cho, Kanazawa 920-1192 (Japan); Nishimura, Ryutaro [SOKENDAI (The Graduate University for Advanced Studies), Shonan Village, Hayama 240-0193 (Japan); Tauchi, Kazuya [High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan); Tobita, Naoshi [University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577 (Japan); Tsuboyama, Toru; Yamada, Miho [High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan)

    2016-07-11

    We are developing advanced pixel sensors using silicon-on-insulator (SOI) technology. A SOI wafer is used; top silicon is used for electric circuit and bottom silicon is used as a sensor. Target applications are high-energy physics, X-ray astronomy, material science, non-destructive inspection, medical application and so on. We have developed two integration-type pixel sensors, FPIXb and INTPIX7. These sensors were processed on single SOI wafers with various substrates in n- or p-type and double SOI wafers. The development status of double SOI sensors and some up-to-date test results of n-type and p-type SOI sensors are shown.

  11. Exploration of the potential performance of polycrystalline silicon-based active matrix flat-panel imagers incorporating active pixel sensor architectures

    Science.gov (United States)

    Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Koniczek, Martin; McDonald, John; Yeakey, Mike; Wang, Yi; Behravan, Mahdokht; Street, Robert A.; Lu, JengPing

    2008-03-01

    Conventional active matrix flat-panel imagers (AMFPIs), employing amorphous silicon (a-Si:H) semiconductors, are based on a relatively simple pixel architecture, commonly taking the form of a single, thin-film transistor (TFT) coupled to a pixel storage capacitor. Although this semiconductor-architecture combination has led to the successful creation of x-ray imagers for many applications, a variety of significant performance limitations related to DQE, frame rate and charge trapping have also become apparent. While prospects for designing solutions to these restrictions based on a-Si:H TFTs are uncertain, progress in the development of high-quality polycrystalline silicon (poly-Si) TFTs is opening up new possibilities for large area x-ray imager design. Recently, initial prototype imagers have been developed using poly-Si TFTs in the form of 1-stage and 2-stage pixel amplifiers-ircuit architectures that can generally be referred to as active pixel sensors (APS). The insight gained from empirical evaluations of such prototypes, coupled with theoretical studies, can inspire increasingly sophisticated APS architectures that overcome the limitations, while preserving the advantages, of conventional AMFPIs. In this paper, cascaded systems analysis and circuit simulation are used to explore potential performance improvements enabled by APS architectures based on poly-Si TFTs. These studies suggest that it is possible to achieve significant improvements in DQE at low exposures or very small pixel sizes, higher maximum frame rates, and reduced charge trapping effects through implementation of such architectures.

  12. The Depfet Active Pixel Sensor as Vertex Detector for the Ilc

    Science.gov (United States)

    Moser, H.-G.; Andricek, L.; Fischer, P.; Giesen, F.; Harter, M.; Karagounis, M.; Kohrs, R.; Krüger, H.; Lutz, G.; Peric, I.; Reuen, L.; Richter, R. H.; Sandow, C.; Strüder, L.; Treis, J.; Trimpl, M.; Wermes, N.; Wölfel, S.

    2006-04-01

    For the International Linear Collider a vertex detector with unprecedented performance is needed. The DEPFET, which integrates a MOSFET into the high resistivity detector substrate offers such performance: large signal/noise, small pixel size, thin detectors, low power consumption, high readout speed and radiation tolerance. This paper presents the concept of the DEPFET and results of a complete prototype system with dedicated control and readout electronics. Measurements of the radiation hardness will be presented and the technology to achieve thin detectors (50 μm) will be discussed.

  13. Development of CMOS Monolithic Active Pixel Sensors for the ALICE-ITS Outer Barrel and for the CBM-MVD

    CERN Document Server

    Deveaux, Michael

    2015-01-01

    After more than a decade of R&D;, CMOS Monolithic Active Pixel Sensors (MAPS or CPS) have proven to offer concrete answers to the demanding requirements of subatomic physics experi- ments. Their main advantages result from their low material budget, their very high granularity and their integrated signal processing circuitry, which allows coping with high particle rates. Moreover, they offer a valuable radiation tolerance and may be produced at low cost. Sensors of the MIMOSA series have offered an opportunity for nuclear and particle physics exper- iments to address with improved sensitivity physics studies requiring an accurate reconstruction of short living and soft particles. One of their major applications is the STAR-PXL detector, which is the first vertex detector based on MAPS. While this experiment is successfully taking data since two years, it was found that the 0.35 m CMOS technology used for this purpose is not suited for upcoming applications like the CBM micro-vertex detector (MVD) and the ...

  14. Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors

    Science.gov (United States)

    Maneuski, D.; Bates, R.; Blue, A.; Buttar, C.; Doonan, K.; Eklund, L.; Gimenez, E. N.; Hynds, D.; Kachkanov, S.; Kalliopuska, J.; McMullen, T.; O'Shea, V.; Tartoni, N.; Plackett, R.; Vahanen, S.; Wraight, K.

    2015-03-01

    Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μ m thick sensors, with the last pixel-to-edge distance of either 50 or 100 μ m. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μ m, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μ m) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μ m thick n-on-p sensors is affected only for the last two pixels (up to 110 μ m) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.

  15. What's A Pixel Particle Sensor Chip?

    CERN Multimedia

    2008-01-01

    ATLAS particle physics experiment aided with collaboration ON Semiconductor was recently honored by the European Council for Nuclear Research (CERN), with an Industrial Award recognizing the company's contribution in supplying complex "Pixel Particle Sensor" chips for use in CERN's ATLAS particle physics experiment.

  16. A full on-chip, low noise, low power consumption reference generator in monolithic active pixel sensors

    Science.gov (United States)

    Wang, Jia; Gao, Deyuan; Valin, Isabelle; Dorokhov, Andrei; Hu, Yann

    2011-12-01

    The monolithic active pixel sensor (MAPS) is a promising choice to track charged particles in high energy physics experiments, such as the solenoidal tracker at RHIC (STAR). In order to achieve a clean reference voltage and simplify the cable placement, a full on-chip reference generator is presented in this paper. By utilizing a buffer and a series RC network, the proposed circuit can achieve good stability, low power and low noise, without any external components. The output voltage is adjustable to compensate the influence of the fabrication process. The generator has been implemented and fabricated in a standard 0.35 μm CMOS process. Its silicon area is 327 μm×119 μm. The total power dissipation is 677 μW at a supply voltage of 3.3 V. The measured results show that only 5.84% of the total noise in MAPS is induced by the proposed reference generator. The comparison with the other optional circuit based on a current buffer is also presented.

  17. The APSEL4D Monolithic Active Pixel Sensor and its Usage in a Single Electron Interference Experiment

    CERN Document Server

    Alberghi, Gian Luigi

    We have realized a Data Acquisition chain for the use and characterization of APSEL4D, a 32 x 128 Monolithic Active Pixel Sensor, developed as a prototype for frontier experiments in high energy particle physics. In particular a transition board was realized for the conversion between the chip and the FPGA voltage levels and for the signal quality enhancing. A Xilinx Spartan-3 FPGA was used for real time data processing, for the chip control and the communication with a Personal Computer through a 2.0 USB port. For this purpose a firmware code, developed in VHDL language, was written. Finally a Graphical User Interface for the online system monitoring, hit display and chip control, based on windows and widgets, was realized developing a C++ code and using Qt and Qwt dedicated libraries. APSEL4D and the full acquisition chain were characterized for the first time with the electron beam of the transmission electron microscope and with 55Fe and 90Sr radioactive sources. In addition, a beam test was performed at ...

  18. Development and characterisation of Monolithic Active Pixel Sensor prototypes for the upgrade of the ALICE Inner Tracking System

    CERN Document Server

    Collu, Alberto

    ALICE (A Large Ion Collider Experiment) is dedicated to the study and characterisation of the Quark-­‐Gluon Plasma (QGP), exploiting the unique potential of ultrarelativistic heavy-­‐ion collisions at the CERN Large Hadron Collider (LHC). The increase of the LHC luminosity leading up to about 50 kHz Pb-­‐Pb interaction rate after the second long shutdown (in 2018-­‐2019) will offer the possibility to perform high precision measurements of rare probes over a wide range of momenta. These measurements are statistically limited or not even possible with the present experimental set up. For this reason, an upgrade strategy for several ALICE detectors is being pursued. In particular, it is foreseen to replace the Inner Tracking System (ITS) by a new detector which will significantly improve the tracking and vertexing capabilities of ALICE in the upgrade scenario. The new ITS will have a barrel geometry consisting of seven layers of Monolithic Active Pixel Sensors (MAPS) with high granularity, which will...

  19. Evaluation of the x-ray response of amorphous selenium coated 100-μm pitch a-Si active pixel sensors for tomosynthesis applications

    Science.gov (United States)

    Taghibakhsh, Farhad; Hunter, David M.; Karim, Karim S.; Belev, George; Kasap, Safa O.; Verpakhovski, Vladimir; Yaffe, Martin J.

    2009-02-01

    We detail the integration of amorphous silicon (a-Si) active pixel sensor (APS) test arrays with an overlying amorphous selenium (a-Se) x-ray photoconductor, and report on results of their x-ray response and imaging properties. The a-Se/a-Si APS arrays incorporate a two-transistor (2T) gate-switched pixel amplifier architecture designed to provide high detector array resolution, as well as a controllable on-pixel gain. The direct x-ray detectors consist of in-house fabricated, dual mode active and passive sensor arrays with detector element (del) pitches of 100 μm and 200 μm, coated with 80 μm thick stabilized amorphous selenium. These selenium layers were selected for preliminary work and represent a quantum efficiency (QE) of 69% for x-ray spectra (tungsten target, 2 mm Al filtration) of 30 kVp. Detector response was evaluated for a-Se biasing electric fields of both 5 V/μm and 10 V/μm. A detector dark current of 110 pA/cm2 (0.01 pA/100 μm del) at 10V/μm electric field, a controllable detector conversion gain up to 15.3 nA/mR at 30 kVp were measured. Active pixel gains of 6.7 and 9.6 were measured for 100μm and 200μm pitch detectors respectively. The amplified readout exhibits a better detection limit (by one order of magnitude) compared to the passive readout implemented on the same pixel. Capabilities of amplified pixels such as nondestructive readout, as well as programmable pixel conversion gain, and dynamic range control are demonstrated. In light of their adaptable gain and dynamic range, these detectors represent a promising technology for high-resolution high gain x-ray digital imaging, particularly in mammography tomosynthesis.

  20. Empirical electro-optical and x-ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x-ray medical imaging.

    Science.gov (United States)

    Arvanitis, C D; Bohndiek, S E; Royle, G; Blue, A; Liang, H X; Clark, A; Prydderch, M; Turchetta, R; Speller, R

    2007-12-01

    Monolithic complementary metal oxide semiconductor (CMOS) active pixel sensors with high performance have gained attention in the last few years in many scientific and space applications. In order to evaluate the increasing capabilities of this technology, in particular where low dose high resolution x-ray medical imaging is required, critical electro-optical and physical x-ray performance evaluation was determined. The electro-optical performance includes read noise, full well capacity, interacting quantum efficiency, and pixels cross talk. The x-ray performance, including x-ray sensitivity, modulation transfer function, noise power spectrum, and detection quantum efficiency, has been evaluated in the mammographic energy range. The sensor is a 525 x 525 standard three transistor CMOS active pixel sensor array with more than 75% fill factor and 25 x 25 microm pixel pitch. Reading at 10 f/s, it is found that the sensor has 114 electrons total additive noise, 10(5) electrons full well capacity with shot noise limited operation, and 34% interacting quantum efficiency at 530 nm. Two different structured CsI:Tl phosphors with thickness 95 and 115 microm, respectively, have been optically coupled via a fiber optic plate to the array resulting in two different system configurations. The sensitivity of the two different system configurations was 43 and 47 electrons per x-ray incident on the sensor. The MTF at 10% of the two different system configurations was 9.5 and 9 cycles/mm with detective quantum efficiency of 0.45 and 0.48, respectively, close to zero frequency at approximately 0.44 microC/kg (1.72 mR) detector entrance exposure. The detector was quantum limited at low spatial frequencies and its performance was comparable with high resolution a: Si and charge coupled device based x-ray imagers. The detector also demonstrates almost an order of magnitude lower noise than active matrix flat panel imagers. The results suggest that CMOS active pixel sensors when coupled

  1. Sensor Development and Readout Prototyping for the STAR Pixel Detector

    Energy Technology Data Exchange (ETDEWEB)

    Greiner, L.; Anderssen, E.; Matis, H.S.; Ritter, H.G.; Stezelberger, T.; Szelezniak, M.; Sun, X.; Vu, C.; Wieman, H.

    2009-01-14

    The STAR experiment at the Relativistic Heavy Ion Collider (RHIC) is designing a new vertex detector. The purpose of this upgrade detector is to provide high resolution pointing to allow for the direct topological reconstruction of heavy flavor decays such as the D{sup 0} by finding vertices displaced from the collision vertex by greater than 60 microns. We are using Monolithic Active Pixel Sensor (MAPS) as the sensor technology and have a coupled sensor development and readout system plan that leads to a final detector with a <200 {micro}s integration time, 400 M pixels and a coverage of -1 < {eta} < 1. We present our coupled sensor and readout development plan and the status of the prototyping work that has been accomplished.

  2. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    CERN Document Server

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  3. New generation of monolithic active pixel sensors for charged particle detection; Developpement d'un capteur de nouvelle generation et son electronique integree pour les collisionneurs futurs

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, G

    2002-09-01

    Vertex detectors are of great importance in particle physics experiments, as the knowledge of the event flavour is becoming an issue for the physics programme at Future Linear Colliders. Monolithic Active Pixel Sensors (MAPS) based on a novel detector structure have been proposed. Their fabrication is compatible with a standard CMOS process. The sensor is inseparable from the readout electronics, since both of them are integrated on the same, low-resistivity silicon wafer. The basic pixel configuration comprises only three MOS transistors and a diode collecting the charge through thermal diffusion. The charge is generated in the thin non-depleted epitaxial layer underneath the readout electronics. This approach provides, at low cost, a high resolution and thin device with the whole area sensitive to radiation. Device simulations using the ISE-TCAD package have been carried out to study the charge collection mechanism. In order to demonstrate the viability of the technique, four prototype chips have been fabricated using different submicrometer CMOS processes. The pixel gain has been calibrated using a {sup 55}Fe source and the Poisson sequence method. The prototypes have been exposed to high-energy particle beams at CERN. The tests proved excellent detection performances expressed in a single-track spatial resolution of 1.5 {mu}m and detection efficiency close to 100%, resulting from a SNR ratio of more than 30. Irradiation tests showed immunity of MAPS to a level of a few times 10{sup 12} n/cm{sup 2} and a few hundred kRad of ionising radiation. The ideas for future work, including on-pixel signal amplification, double sampling operation and current mode pixel design are present as well. (author)

  4. ATLAS ITk and new pixel sensors technologies

    CERN Document Server

    Gaudiello, A

    2016-01-01

    During the 2023–2024 shutdown, the Large Hadron Collider (LHC) will be upgraded to reach an instantaneous luminosity up to 7×10$^{34}$ cm$^{−2}$s$^{−1}$. This upgrade of the accelerator is called High-Luminosity LHC (HL-LHC). The ATLAS detector will be changed to meet the challenges of HL-LHC: an average of 200 pile-up events in every bunch crossing, and an integrated luminosity of 3000 fb $^{−1}$ over ten years. The HL-LHC luminosity conditions are too extreme for the current silicon (pixel and strip) detectors and straw tube transition radiation tracker (TRT) of the current ATLAS tracking system. Therefore the ATLAS inner tracker is being completely rebuilt for data-taking and the new system is called Inner Tracker (ITk). During this upgrade the TRT will be removed in favor of an all-new all-silicon tracker composed only by strip and pixel detectors. An overview of new layouts in study will be reported and the new pixel sensor technologies in development will be explained.

  5. Achievements of the ATLAS upgrade planar pixel sensors R and D project

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy)

    2014-11-21

    This paper reports on recent accomplishments and ongoing work of the ATLAS Planar Pixel Sensors R and D project. Special attention is given in particular to new testbeam results obtained with highly irradiated sensors, developments in the field of slim and active edges and first step towards prototypes of future pixel modules.

  6. Study of current-mode active pixel sensor circuits using amorphous InSnZnO thin-film transistor for 50-μm pixel-pitch indirect X-ray imagers

    Science.gov (United States)

    Cheng, Mao-Hsun; Zhao, Chumin; Kanicki, Jerzy

    2017-05-01

    Current-mode active pixel sensor (C-APS) circuits based on amorphous indium-tin-zinc-oxide thin-film transistors (a-ITZO TFTs) are proposed for indirect X-ray imagers. The proposed C-APS circuits include a combination of a hydrogenated amorphous silicon (a-Si:H) p+-i-n+ photodiode (PD) and a-ITZO TFTs. Source-output (SO) and drain-output (DO) C-APS are investigated and compared. Acceptable signal linearity and high gains are realized for SO C-APS. APS circuit characteristics including voltage gain, charge gain, signal linearity, charge-to-current conversion gain, electron-to-voltage conversion gain are evaluated. The impact of the a-ITZO TFT threshold voltage shifts on C-APS is also considered. A layout for a pixel pitch of 50 μm and an associated fabrication process are suggested. Data line loadings for 4k-resolution X-ray imagers are computed and their impact on circuit performances is taken into consideration. Noise analysis is performed, showing a total input-referred noise of 239 e-.

  7. Silicon sensors for the upgrades of the CMS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo

    2015-12-15

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.10{sup 34} cm{sup -2}s{sup -1}. A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.10{sup 34} cm{sup -2}s{sup -1}. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.10{sup 34} cm{sup -2}s{sup -1}, twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φ{sub eq}=2.10{sup 16} cm{sup -2} and a dose of ∼10 MGy after an integrated luminosity of 3000 fb{sup -1}. Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip

  8. Mapping Electrical Crosstalk in Pixelated Sensor Arrays

    Science.gov (United States)

    Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

    2017-01-01

    The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

  9. First results on DEPFET Active Pixel Sensors fabricated in a CMOS foundry—a promising approach for new detector development and scientific instrumentation

    Science.gov (United States)

    Aschauer, S.; Majewski, P.; Lutz, G.; Soltau, H.; Holl, P.; Hartmann, R.; Schlosser, D.; Paschen, U.; Weyers, S.; Dreiner, S.; Klusmann, M.; Hauser, J.; Kalok, D.; Bechteler, A.; Heinzinger, K.; Porro, M.; Titze, B.; Strüder, L.

    2017-11-01

    DEPFET Active Pixel Sensors (APS) have been introduced as focal plane detectors for X-ray astronomy already in 1996. Fabricated on high resistivity, fully depleted silicon and back-illuminated they can provide high quantum efficiency and low noise operation even at very high read rates. In 2009 a new type of DEPFET APS, the DSSC (DEPFET Sensor with Signal Compression) was developed, which is dedicated to high-speed X-ray imaging at the European X-ray free electron laser facility (EuXFEL) in Hamburg. In order to resolve the enormous contrasts occurring in Free Electron Laser (FEL) experiments, this new DSSC-DEPFET sensor has the capability of nonlinear amplification, that is, high gain for low intensities in order to obtain single-photon detection capability, and reduced gain for high intensities to achieve high dynamic range for several thousand photons per pixel and frame. We call this property "signal compression". Starting in 2015, we have been fabricating DEPFET sensors in an industrial scale CMOS foundry maintaining the outstanding proven DEPFET properties and adding new capabilities due to the industrial-scale CMOS process. We will highlight these additional features and describe the progress achieved so far. In a first attempt on double-sided polished 725 μm thick 200 mm high resistivity float zone silicon wafers all relevant device related properties have been measured, such as leakage current, depletion voltage, transistor characteristics, noise and energy resolution for X-rays and the nonlinear response. The smaller feature size provided by the new technology allows for an advanced design and significant improvements in device performance. A brief summary of the present status will be given as well as an outlook on next steps and future perspectives.

  10. A passive CMOS pixel sensor for the high luminosity LHC

    Energy Technology Data Exchange (ETDEWEB)

    Daas, Michael; Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Janssen, Jens; Krueger, Hans; Pohl, David-Leon; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Muenchen (Germany)

    2016-07-01

    The high luminosity upgrade for the Large Hadron Collider at CERN requires a new inner tracking detector for the ATLAS experiment. About 200 m{sup 2} of silicon detectors are needed demanding new, low cost hybridization- and sensor technologies. One promising approach is to use commercial CMOS technologies to produce the passive sensor for a hybrid pixel detector design. In this talk a fully functional prototype of a 300 μm thick, backside biased CMOS pixel sensor in 150 nm LFoundry technology is presented. The sensor is bump bonded to the ATLAS FE-I4 with AC and DC coupled pixels. Results like leakage current, noise performance, and charge collection efficiency are presented and compared to the actual ATLAS pixel sensor design.

  11. Development of radiation hardened pixel sensors for charged particle detection

    CERN Document Server

    Koziel, Michal

    2014-01-01

    CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-energy physics experiments with the crucial advantages of a low material budget and low production costs. The features simultaneously required are a short readout time, high granularity and high tolerance to radiation. This thesis mainly focuses on the radiation tolerance studies. To achieve the targeted readout time (tens of microseconds), the sensor pixel readout was organized in parallel columns restricting in addition the readout to pixels that had collected the signal charge. The pixels became then more complex, and consequently more sensitive to radiation. Different in-pixel architectures were studied and it was concluded that the tolerance to ionizing radiation was limited to 300 krad with the 0.35- m fabrication process currently used, while the targeted value was several Mrad. Improving this situation calls for implementation of the sensors in processes with a smaller feature size which naturally imp...

  12. A low power and low signal 4 bit 50MS/s double sampling pipelined ADC for monolithie active pixel sensors

    CERN Document Server

    Dahoumane, M; Bouvier, J; Lagorio, E; Hostachy, J Y; Gallin-Martel, L; Hostachy, J Y; Rossetto, O; Hu, Y; Ghazlane, H; Dallet, D

    2007-01-01

    A 4 bit very low power and low incoming signal analog to digital converter (ADC) using a double sampling switched capacitor technique, designed for use in CMOS monolithic active pixels sensor readout, has been implemented in 0.35μm CMOS technology. A non-resetting sample and hold stage is integrated to amplify the incoming signal by 4. This first stage compensates both the amplifier offset effect and the input common mode voltage fluctuations. The converter is composed of a 2.5 bit pipeline stage followed by a 2 bit flash stage. This prototype consists of 4 ADC double-channels; each one is sampling at 50MS/s and dissipates only 2.6mW at 3.3V supply voltage. A bias pulsing stage is integrated in the circuit. Therefore, the analog part is switched OFF or ON in less than 1μs. The size for the layout is 80μm*0.9mm. This corresponds to the pitch of 4 pixel columns, each one is 20μm wide.

  13. Mapping Capacitive Coupling Among Pixels in a Sensor Array

    Science.gov (United States)

    Seshadri, Suresh; Cole, David M.; Smith, Roger M.

    2010-01-01

    An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

  14. CMOS monolithic pixel sensors research and development at LBNL

    Indian Academy of Sciences (India)

    Abstract. This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS ...

  15. Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results

    CERN Document Server

    Weingarten, J

    2012-01-01

    The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.

  16. Small pitch pixel sensors for the CMS Phase II upgrade

    CERN Document Server

    AUTHOR|(CDS)2069790

    2015-01-01

    The CMS collaboration has undertaken two sensor R\\&D programs on thin n-in-p planar and 3D silicon sensor technologies. To cope with the increase in instantaneous luminosity, the pixel area has to be reduced to approximately 2500 $\\mu$m$^{2}$ to keep the occupancy at the percent level. Suggested pixel cell geometries to match this requirement are {50$\\times$50 }$\\mu$...

  17. New results on diamond pixel sensors using ATLAS frontend electronics

    CERN Document Server

    Keil, Markus; Berdermann, E; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W

    2003-01-01

    Diamond is a promising sensor material for future collider experiments due to its radiation hardness. Diamond pixel sensors have been bump bonded to an ATLAS pixel readout chip using PbSn solder bumps. Single chip devices have been characterised by lab measurements and in a high-energy pion beam at CERN. Results on charge collection, spatial resolution, efficiency and the charge carrier lifetime are presented.

  18. Mapping Electrical Crosstalk in Pixelated Sensor Arrays

    Science.gov (United States)

    Seshadri, S.; Cole, D. M.; Hancock, B. R.; Smith, R. M.

    2008-01-01

    Electronic coupling effects such as Inter-Pixel Capacitance (IPC) affect the quantitative interpretation of image data from CMOS, hybrid visible and infrared imagers alike. Existing methods of characterizing IPC do not provide a map of the spatial variation of IPC over all pixels. We demonstrate a deterministic method that provides a direct quantitative map of the crosstalk across an imager. The approach requires only the ability to reset single pixels to an arbitrary voltage, different from the rest of the imager. No illumination source is required. Mapping IPC independently for each pixel is also made practical by the greater S/N ratio achievable for an electrical stimulus than for an optical stimulus, which is subject to both Poisson statistics and diffusion effects of photo-generated charge. The data we present illustrates a more complex picture of IPC in Teledyne HgCdTe and HyViSi focal plane arrays than is presently understood, including the presence of a newly discovered, long range IPC in the HyViSi FPA that extends tens of pixels in distance, likely stemming from extended field effects in the fully depleted substrate. The sensitivity of the measurement approach has been shown to be good enough to distinguish spatial structure in IPC of the order of 0.1%.

  19. The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications

    Science.gov (United States)

    Konstantinidis, Anastasios C.; Szafraniec, Magdalena B.; Speller, Robert D.; Olivo, Alessandro

    2012-10-01

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacity and dynamic range. The latter, which included measuring X-ray sensitivity, presampling modulation transfer function (pMTF), noise power spectrum (NPS) and the resulting detective quantum efficiency (DQE), was assessed under three beam qualities (28 kV, 50 kV (RQA3) and 70 kV (RQA5) using W/Al) all in accordance with the IEC standard. The detector features an in-pixel option for switching the full well capacity between two distinct modes, high full well (HFW) and low full well (LFW). Two structured CsI:Tl scintillators of different thickness (a “thin” one for high resolution and a thicker one for high light efficiency) were optically coupled to the sensor array to optimize the performance of the system for different medical applications. The electro-optical performance evaluation of the sensor results in relatively high read noise (∼360 e-), high full well capacity (∼1.5×106 e-) and wide dynamic range (∼73 dB) under HFW mode operation. When the LFW mode is used, the read noise is lower (∼165) at the expense of a reduced full well capacity (∼0.5×106 e-) and dynamic range (∼69 dB). The maximum DQE values at low frequencies (i.e. 0.5 lp/mm) are high for both HFW (0.69 for 28 kV, 0.71 for 50 kV and 0.75 for 70 kV) and LFW (0.69 for 28 kV and 0.7 for 50 kV) modes. The X-ray performance of the studied detector compares well to that of other mammography and general radiography systems, obtained under similar experimental conditions. This demonstrates the suitability

  20. Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

    CERN Document Server

    Bubna, M.; Alagoz, E.; Krzywda, A.; Arndt, K.; Shipsey, I.; Bolla, G.; Hinton, N.; Kok, A.; Hansen, T.-E.; Summanwar, A.; Brom, J.M.; Boscardin, M.; Chramowicz, J.; Cumalat, J.; Dalla Betta, G.F.; Dinardo, M.; Godshalk, A.; Jones, M.; Krohn, M.D.; Kumar, A.; Lei, C.M.; Mendicino, R.; Moroni, L.; Perera, L.; Povoli, M.; Prosser, A.; Rivera, R.; Solano, A.; Obertino, M.M.; Kwan, S.; Uplegger, L.; Vigani, L.; Wagner, S.

    2014-01-01

    The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.

  1. Fully depleted CMOS pixel sensor development and potential applications

    Energy Technology Data Exchange (ETDEWEB)

    Baudot, J.; Kachel, M. [Universite de Strasbourg, IPHC, 23 rue du Loess 67037 Strasbourg (France); CNRS, UMR7178, 67037 Strasbourg (France)

    2015-07-01

    CMOS pixel sensors are often opposed to hybrid pixel sensors due to their very different sensitive layer. In standard CMOS imaging processes, a thin (about 20 μm) low resistivity epitaxial layer acts as the sensitive volume and charge collection is mostly driven by thermal agitation. In contrast, the so-called hybrid pixel technology exploits a thick (typically 300 μm) silicon sensor with high resistivity allowing for the depletion of this volume, hence charges drift toward collecting electrodes. But this difference is fading away with the recent availability of some CMOS imaging processes based on a relatively thick (about 50 μm) high resistivity epitaxial layer which allows for full depletion. This evolution extents the range of applications for CMOS pixel sensors where their known assets, high sensitivity and granularity combined with embedded signal treatment, could potentially foster breakthrough in detection performances for specific scientific instruments. One such domain is the Xray detection for soft energies, typically below 10 keV, where the thin sensitive layer was previously severely impeding CMOS sensor usage. Another application becoming realistic for CMOS sensors, is the detection in environment with a high fluence of non-ionizing radiation, such as hadron colliders. However, when considering highly demanding applications, it is still to be proven that micro-circuits required to uniformly deplete the sensor at the pixel level, do not mitigate the sensitivity and efficiency required. Prototype sensors in two different technologies with resistivity higher than 1 kΩ, sensitive layer between 40 and 50 μm and featuring pixel pitch in the range 25 to 50 μm, have been designed and fabricated. Various biasing architectures were adopted to reach full depletion with only a few volts. Laboratory investigations with three types of sources (X-rays, β-rays and infrared light) demonstrated the validity of the approach with respect to depletion, keeping a

  2. Digital pixel sensor array with logarithmic delta-sigma architecture.

    Science.gov (United States)

    Mahmoodi, Alireza; Li, Jing; Joseph, Dileepan

    2013-08-16

    Like the human eye, logarithmic image sensors achieve wide dynamic range easily at video rates, but, unlike the human eye, they suffer from low peak signal-to-noise-and-distortion ratios (PSNDRs). To improve the PSNDR, we propose integrating a delta-sigma analog-to-digital converter (ADC) in each pixel. An image sensor employing this architecture is designed, built and tested in 0.18 micron complementary metal-oxide-semiconductor (CMOS) technology. It achieves a PSNDR better than state-of-the-art logarithmic sensors and comparable to the human eye. As the approach concerns an array of many ADCs, we use a small-area low-power delta-sigma design. For scalability, each pixel has its own decimator. The prototype is compared to a variety of other image sensors, linear and nonlinear, from industry and academia.

  3. The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Konstantinidis, Anastasios C., E-mail: a.konstantinidis@medphys.ucl.ac.uk [Department of Medical Physics and Bioengineering, Malet Place Engineering Building, University College London, Gower Street, London, WC1E 6BT (United Kingdom); Szafraniec, Magdalena B.; Speller, Robert D.; Olivo, Alessandro [Department of Medical Physics and Bioengineering, Malet Place Engineering Building, University College London, Gower Street, London, WC1E 6BT (United Kingdom)

    2012-10-11

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacity and dynamic range. The latter, which included measuring X-ray sensitivity, presampling modulation transfer function (pMTF), noise power spectrum (NPS) and the resulting detective quantum efficiency (DQE), was assessed under three beam qualities (28 kV, 50 kV (RQA3) and 70 kV (RQA5) using W/Al) all in accordance with the IEC standard. The detector features an in-pixel option for switching the full well capacity between two distinct modes, high full well (HFW) and low full well (LFW). Two structured CsI:Tl scintillators of different thickness (a 'thin' one for high resolution and a thicker one for high light efficiency) were optically coupled to the sensor array to optimize the performance of the system for different medical applications. The electro-optical performance evaluation of the sensor results in relatively high read noise ({approx}360 e{sup -}), high full well capacity ({approx}1.5 Multiplication-Sign 10{sup 6} e{sup -}) and wide dynamic range ({approx}73 dB) under HFW mode operation. When the LFW mode is used, the read noise is lower ({approx}165) at the expense of a reduced full well capacity ({approx}0.5 Multiplication-Sign 10{sup 6} e{sup -}) and dynamic range ({approx}69 dB). The maximum DQE values at low frequencies (i.e. 0.5 lp/mm) are high for both HFW (0.69 for 28 kV, 0.71 for 50 kV and 0.75 for 70 kV) and LFW (0.69 for 28 kV and 0.7 for 50 kV) modes. The X-ray performance of the studied detector compares well to that of other mammography and

  4. 3D silicon pixel sensors: Recent test beam results

    CERN Document Server

    Hansson, P; Sandaker, H; Korolkov, I; Barrera, C; Wermes, N; Borri, M; Grinstein, S; Troyano, I; Grenier, P; Devetak, E; Fleta, C; Kenney, C; Tsybychev, D; Nellist, C; Chmeissan, M; Su, D; DeWilde, B; Silverstein, D; Dorholt, O; Tsung, J; Sjoebaek, K; Stupak, J; Slaviec, T; Micelli, A; Helle, K; Bolle, E; Huegging, F; Kocian, M; Fazio, S; Balbuena, J; Dalla Betta, G F; La Rosa, A; Rivero, F; Mastroberardino, A; Hasi, J; Darbo, G; Boscardin, M; Da Via, C; Nordahl, P; Giordani, M; Jackson, P; Rohne, O; Gemme, C; Young, C

    2011-01-01

    The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension 50 x 400 mu m(2). Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6 T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the same time to give comparison. Published by Elsevier B.V.

  5. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Nachman, Benjamin Philip; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

  6. Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

    Science.gov (United States)

    Cavicchioli, C.; Chalmet, P. L.; Giubilato, P.; Hillemanns, H.; Junique, A.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mattiazzo, S.; Mugnier, H.; Musa, L.; Pantano, D.; Rousset, J.; Reidt, F.; Riedler, P.; Snoeys, W.; Van Hoorne, J. W.; Yang, P.

    2014-11-01

    Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget ( 0.3 %X0 in total for each inner layer) and higher granularity ( 20 μm × 20 μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity (ρ > 1 kΩ cm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge collection properties of the different pixel variants implemented in Explorer0 have been studied using a 55Fe X-ray source and 1-5 GeV/c electrons and positrons. The sensor capacitance has been estimated, and the effect of the sensor bias has also been examined in detail. A second version of the Explorer0 chip (called Explorer1) has been submitted for production in March 2013, together with a novel circuit with in-pixel discrimination and a sparsified readout. Results from these submissions are also presented.

  7. Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

    CERN Document Server

    Bomben, M.; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchiori, G.; Zorzi, N.

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the 'active edge' concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  8. Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

    CERN Document Server

    Bomben, M

    2013-01-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  9. Novel silicon n-on-p edgeless planar pixel sensors for the ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, M., E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Bagolini, A.; Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, L. [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, Pisa (Italy); INFN Sez. di Pisa, Pisa (Italy); Chauveau, J. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-12-01

    In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

  10. A beam monitor using silicon pixel sensors for hadron therapy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhen, E-mail: zwang@mails.ccnu.edu.cn; Zou, Shuguang; Fan, Yan; Liu, Jun; Sun, Xiangming, E-mail: sphy2007@126.com; Wang, Dong; Kang, Huili; Sun, Daming; Yang, Ping; Pei, Hua; Huang, Guangming; Xu, Nu; Gao, Chaosong; Xiao, Le

    2017-03-21

    We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, Topmetal-II{sup -}, as the anode array. Topmetal-II{sup -} is a charge sensor designed in a CMOS 0.35 µm technology. Each Topmetal-II{sup -} sensor has 72×72 pixels and the pixel size is 83×83 µm{sup 2}. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 µm, angular resolution about 0.5° and intensity statistical accuracy better than 2%.

  11. Research and Development of Monolithic Active Pixel Sensors for the Detection of the Elementary Particles; Recherche et developpement de capteurs actifs monolithiques CMOS pour la detection de particules elementaires

    Energy Technology Data Exchange (ETDEWEB)

    Li, Y

    2007-09-15

    In order to develop high spatial resolution and readout speed vertex detectors for the future International Linear Collider (ILC), fast CMOS Monolithic Active Pixel Sensors (MAPS) are studied on this work. Two prototypes of MAPS, MIMOSA 8 and MIMOSA 16, based on the same micro-electronic architecture were developed in CMOS processes with different thickness of epitaxial layer. The size of pixel matrix is 32 x 128: 8 columns of the pixel array are readout directly with analog outputs and the other 24 columns are connected to the column level auto-zero discriminators. The Correlated Double Sampling (CDS) structures are successfully implemented inside pixel and discriminator. The photo diode type pixels with different diode sizes are used in these prototypes. With a {sup 55}Fe X-ray radioactive source, the important parameters, such as Temporal Noise, Fixed Pattern Noise (FPN), Signal-to-Noise Ratio (SNR), Charge-to-Voltage conversion Factor (CVF) and Charge Collection Efficiency (CCE), are studied as function of readout speed and diode size. For MIMOSA 8, the effect of fast neutrons irradiation is also. Two beam tests campaigns were made: at DESY with a 5 GeV electrons beam and at CERN with a 180 GeV pions beam. Detection Efficiency and Spatial Resolution are studied in function of the discriminator threshold. For these two parameters, the influences of diode size and SNR of the central pixel of a cluster are also discussed. In order to improve the spatial resolution of the digital outputs, a very compact (25 {mu}m x 1 mm) and low consumption (300 {mu}W) column level ADC is designed in AMS 0.35 {mu}m OPTO process. Based on successive approximation architecture, the auto-offset cancellation structure is integrated. A new column level auto-zero discriminator using static latch is also designed. (author)

  12. Recent Results of the ATLAS Upgrade Planar Pixel Sensors R&D Project

    CERN Document Server

    Weigell, Philipp

    2013-01-01

    To cope with the higher occupancy and radiation damage at the HL-LHC also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project (PPS) is an international collaboration of 17 institutions and more than 80 scientists, exploring the feasibility of employing planar pixel sensors for this scenario. Depending on the radius, different pixel concepts are investigated using laboratory and beam test measurements. At small radii the extreme radiation environment and strong space constraints are addressed with very thin pixel sensors active thickness in the range of (75-150) mum, and the development of slim as well as active edges. At larger radii the main challenge is the cost reduction to allow for instrumenting the large area of (7-10) m^2. To reach this goal the pixel productions are being transferred to 6 inch production lines. Additionally, investigated are more cost-efficient and industrialised interconnection techniques as well as the n-in-p technology, which, being a single-sided pr...

  13. Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade

    CERN Document Server

    Cavicchioli, C; Giubilato, P; Hillemanns, H; Junique, A; Kugathasan, T; Mager, M; Marin Tobon, C A; Martinengo, P; Mattiazzo, S; Mugnier, H; Musa, L; Pantano, D; Rousset, J; Reidt, F; Riedler, P; Snoeys, W; Van Hoorne, J W; Yang, P

    2014-01-01

    Within the R&D activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (~0.3%X0~0.3%X0 in total for each inner layer) and higher granularity (View the MathML source~20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity View the MathML source(ρ>1kΩcm) and 18 μm thick epitaxial layer. The chip is organized in two sub-matrices with different pixel pitches (20 μm and 30 μm), each of them containing several pixel designs. The collection electrode size and shape, as well as the distance between the electrode and the surrounding electronics, are varied; the chip also offers the possibility to decouple the charge integration time from the readout time, and to change the sensor bias. The charge c...

  14. Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

    Science.gov (United States)

    Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

    2013-07-01

    In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

  15. Developing a beta source based setup for pixel sensor characterization

    CERN Document Server

    Schouwenberg, Jeroen

    2014-01-01

    The main goal of this project is to provide mono-energetic minimum ionizing electrons from a $^{90}$Sr source using a magnetic monochromator, and thus provide a useful tool for in-lab sensor characterization. The monochromator is calibrated using a setup, with a heavy inorganic scintillator and a PMT, which has been calibrated with a $^{22}$Na gamma source. The average energy of the electrons as a function of the current in the monochromator coil is found to be $1.38\\pm0.01$ keV/mA, taking into consideration the effect of the magnetic field on the signal of the PMT. For integration into the pixel sensor test bench, scintillator-counters (a plastic scintillator connected to a PMT) are used. Their response to the electron energies is observed to follow a saturation curve, which leads to a more identical response for high energetic electrons. A preliminary pixel sensor test bench has been set up and properties such as voltage and discriminator settings have been studied as well as count rates for coincidence cou...

  16. First prototypes of two-tier avalanche pixel sensors for particle detection

    Science.gov (United States)

    Pancheri, L.; Brogi, P.; Collazuol, G.; Dalla Betta, G.-F.; Ficorella, A.; Marrocchesi, P. S.; Morsani, F.; Ratti, L.; Savoy-Navarro, A.

    2017-02-01

    In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150 nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16 pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m2 have a median dark count rate of 3 kHz at 3.3 V excess bias and a breakdown voltage non-uniformity lower than 20 mV.

  17. Modeling radiation damage to pixel sensors in the ATLAS detector

    CERN Document Server

    Ducourthial, Audrey; The ATLAS collaboration

    2017-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

  18. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Ducourthial, Audrey; The ATLAS collaboration

    2017-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

  19. Characteristics of Monolithically Integrated InGaAs Active Pixel Image Array

    Science.gov (United States)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    1999-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate.

  20. Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Rossini, Lorenzo; The ATLAS collaboration

    2018-01-01

    Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

  1. Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

    CERN Document Server

    Bomben, M; Boscardin, M; Bosisio, L; Calderini, G; Chauveau, J; Giacomini, G; La Rosa, A; Marchori, G; Zorzi, N

    2013-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.

  2. Electrical characterization of thin edgeless N-on-p planar pixel sensors for ATLAS upgrades

    CERN Document Server

    Bomben, M

    2014-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.

  3. From vertex detectors to inner trackers with CMOS pixel sensors

    CERN Document Server

    Besson, A.

    2017-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

  4. Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

    CERN Document Server

    Klaiber Lodewigs, Jonas M

    2003-01-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

  5. Performance of Radiation Hard Pixel Sensors for the CMS Experiment

    CERN Document Server

    Dorokhov, Andrei

    2005-01-01

    Position sensitive detectors in particle physics experiments are used for the detection of the particles trajectory produced in high energy collisions. To study physics phenomena at high energies the high particle interaction rate is unavoidable, as the number of interesting events falls with the energy and the total number of events is dominated by the soft processes. The position resolution of vertex detectors has to be of few microns in order to distinguish between particle tracks produced in b-quark or tau-decays, because of the short flight path before the decay. The high spatial position resolution and the ability to detect a large number of superimposed track are the key features for tracking detectors. Modern silicon microstrip and pixel detectors with high resolution are currently most suitable devices for the tracking systems of high energy physics experiments. In this work the performance of the sensors designed for the CMS pixel detector are studied and the position resolution is estimated. In the...

  6. Recent results of the ATLAS Upgrade Planar Pixel Sensors R&D Project

    CERN Document Server

    AUTHOR|(CDS)2073610

    2011-01-01

    The ATLAS detector has to undergo significant updates at the end of the current decade, in order to withstand the increased occupancy and radiation damage that will be produced by the high-luminosity upgrade of the Large Hadron Collider. In this presentation we give an overview of the recent accomplishments of the R&D activity on the planar pixel sensors for the ATLAS Inner Detector upgrade.

  7. Design and realisation of integrated circuits for the readout of pixel sensors in high-energy physics and biomedical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Peric, I.

    2004-08-01

    Radiation tolerant pixel-readout chip for the ATLAS pixel detector has been designed, implemented in a deep-submicron CMOS technology and successfully tested. The chip contains readout-channels with complex analog and digital circuits. Chip for steering of the DEPFET active-pixel matrix has been implemented in a high-voltage CMOS technology. The chip contains channels which generate fast sequences of high-voltage signals. Detector containing this chip has been successfully tested. Pixel-readout test chip for an X-ray imaging pixel sensor has been designed, implemented in a CMOS technology and tested. Pixel-readout channels are able to simultaneously count the signals generated by passage of individual photons and to sum the total charge generated during exposure time. (orig.)

  8. Recent progress of the ATLAS Planar Pixel Sensor R&D Project

    CERN Document Server

    Bomben, M

    2012-01-01

    The foreseen luminosity upgrade for the LHC (a factor of 5-10 more in peak luminosity by 2021) poses serious constraints on the technology for the ATLAS tracker in this High Luminosity era (HL-LHC). In fact, such luminosity increase leads to increased occupancy and radiation damage of the tracking detectors. To investigate the suitability of pixel sensors using the proven planar technology for the upgraded tracker, the ATLAS Planar Pixel Sensor R&D Project was established comprising 17 institutes and more than 80 scientists. Main areas of research are the performance of planar pixel sensors at highest fluences, the exploration of possibilities for cost reduction to enable the instrumentation of large areas, the achievement of slim or active edge designs to provide low geometric inefficiencies without the need for shingling of modules and the investigation of the operation of highly irradiated sensors at low thresholds to increase the efficiency. In the following I will present results from the group, conc...

  9. Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

    CERN Document Server

    AUTHOR|(CDS)2081098; Boscardin, M; Bosisio, L; Calderini, G; Chauveau, J; Giacomini, G; La Rosa, A; Marchori, G; Zorzi, N

    2013-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.

  10. Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Jain, G., E-mail: geetikajain.hep@gmail.com [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Bhardwaj, A.; Dalal, R. [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Eber, R. [Institute fur Experimentelle Kernphysik (Germany); Eichorn, T. [Deutsches Elektronen Synchrotron (Germany); Fernandez, M. [Instituto de Fisica de Cantabria (Spain); Lalwani, K. [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Messineo, A. [Universita di Pisa & INFN sez. di Pisa (Italy); Palomo, F.R. [Escuela Superior de Ingenieros, Universidad de Sevilla (Spain); Peltola, T. [Helsinki Institute of Physics (Finland); Printz, M. [Institute fur Experimentelle Kernphysik (Germany); Ranjan, K. [CDRST, Department of Physics & Astrophysics, University of Delhi, Delhi (India); Villa, I. [Instituto de Fisica de Cantabria (Spain); Hidalgo, S. [Instituto de Microelectronica de Barcelona, Centro Nacional de Microelectronica (Spain)

    2016-07-11

    In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

  11. Design optimization of pixel sensors using device simulations for the phase-II CMS tracker upgrade

    Science.gov (United States)

    Jain, G.; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichorn, T.; Fernandez, M.; Lalwani, K.; Messineo, A.; Palomo, F. R.; Peltola, T.; Printz, M.; Ranjan, K.; Villa, I.; Hidalgo, S.; CMS Collaboration

    2016-07-01

    In order to address the problems caused by the harsh radiation environment during the high luminosity phase of the LHC (HL-LHC), all silicon tracking detectors (pixels and strips) in the CMS experiment will undergo an upgrade. And so to develop radiation hard pixel sensors, simulations have been performed using the 2D TCAD device simulator, SILVACO, to obtain design parameters. The effect of various design parameters like pixel size, pixel depth, implant width, metal overhang, p-stop concentration, p-stop depth and bulk doping density on the leakage current and critical electric field are studied for both non-irradiated as well as irradiated pixel sensors. These 2D simulation results of planar pixels are useful for providing insight into the behaviour of non-irradiated and irradiated silicon pixel sensors and further work on 3D simulation is underway.

  12. Transfer Function and Fluorescence Measurements on New CMOS Pixel Sensor for ATLAS

    CERN Document Server

    Kaemingk, Michael

    2017-01-01

    A new generation of pixel sensors is being designed for the phase II upgrade of the ATLAS Inner Tracker (ITk). These pixel sensors are being tested to ensure that they meet the demands of the ATLAS detector. As a summer student, I was involved in some of the measurements taken for this purpose.

  13. Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

    CERN Document Server

    Calderini, G; Dinu, N; Lounis, A; Marchiori, G

    2011-01-01

    A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of such detectors under different levels of irradiation, a three-level defect model was implemented into the simulation. Using these models, the number of guard rings, the dead edge width and the detector thickness were modified to investigate their influence on the detector depletion at the edge and on its internal electric field distribution in order to optimize the layout parameters. Simulations indicate that the number of guard rings can be reduced by a few hundred microns with respect to the layout used for the present ATLAS sensors, with a corresponding extension of the active area of the sensors. A study of the inter-pixel capacitance and of the capacitance between the implants and the high-voltage contact as a function of several parameters affecting the geometr...

  14. 3D track reconstruction capability of a silicon hybrid active pixel detector

    Science.gov (United States)

    Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

    2017-06-01

    Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

  15. 3D track reconstruction capability of a silicon hybrid active pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri [Czech Technical University in Prague, Institute of Experimental and Applied Physics, Praha (Czech Republic); Burian, Petr; Broulim, Pavel [Czech Technical University in Prague, Institute of Experimental and Applied Physics, Praha (Czech Republic); University of West Bohemia, Faculty of Electrical Engineering, Pilsen (Czech Republic); Jakubek, Jan [Advacam s.r.o., Praha (Czech Republic)

    2017-06-15

    Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 x 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for ''4D'' particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation (x,y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm. (orig.)

  16. The ALPIDE pixel sensor chip for the upgrade of the ALICE Inner Tracking System

    CERN Document Server

    Aglieri Rinella, Gianluca

    2016-01-01

    The ALPIDE chip is a CMOS Monolithic Active Pixel Sensor being developed for the Upgrade of the ITS of the ALICE experiment at the CERN Large Hadron Collider. The ALPIDE chip is implemented with a 180 nm CMOS Imaging Process and fabricated on substrates with a high-resistivity epitaxial layer. It measures 15 mm×30 mm and contains a matrix of 512×1024 pixels with in-pixel amplification, shaping, discrimination and multi-event buffering. The readout of the sensitive matrix is hit driven. There is no signaling activity over the matrix if there are no hits to read out and power consumption is proportional to the occupancy. The sensor meets the experimental requirements of detection efficiency above 99%, fake-hit probability below 10−5 and a spatial resolution of 5 μm. The capability to read out Pb–Pb interactions at 100 kHz is provided. The power density of the ALPIDE chip is projected to be less than 35 mW/cm2 for the application in the Inner Barrel Layers and below 20 mW/cm2 for the Outer Barrel Layers, ...

  17. Development of edgeless n-on-p planar pixel sensors for future ATLAS upgrades

    Energy Technology Data Exchange (ETDEWEB)

    Bomben, Marco, E-mail: marco.bomben@cern.ch [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Bagolini, Alvise; Boscardin, Maurizio [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); Bosisio, Luciano [Università di Trieste, Dipartimento di Fisica and INFN, Trieste (Italy); Calderini, Giovanni [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Dipartimento di Fisica E. Fermi, Università di Pisa, and INFN Sez. di Pisa, Pisa (Italy); Chauveau, Jacques [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy); La Rosa, Alessandro [Section de Physique (DPNC), Université de Genève, Genève (Switzerland); Marchiori, Giovanni [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE) Paris (France); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM) Povo di Trento (Italy)

    2013-06-01

    The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of 1×10{sup 15}n{sub eq}/cm{sup 2} comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb{sup −1}) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach. -- Highlights: ► We conceive n-on-p edgeless planar silicon sensors. ► These sensors are aimed at the Phase-II of the ATLAS experiment. ► Simulations show sensors can be operated well in overdepletion. ► Simulations show the sensor capability to collect charge at the periphery. ► Simulations prove the above statements to be true even after irradiation.

  18. Characterization of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg [Institut fuer Experimentalphysik, Universitaet Hamburg (Germany); Eckstein, Doris; Eichhorn, Thomas [Deutsches Elektronen Synchrotron (DESY) (Germany)

    2016-07-01

    The high-luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the tracker of the CMS experiment. The innermost layer of the new pixel detector will be exposed to severe radiation corresponding to a 1 MeV neutron equivalent fluence up to Φ{sub eq} = 2 . 10{sup 16} cm{sup -2} and an ionizing dose of ∼ 10 MGy after an integrated luminosity of 3000 fb{sup -1}. Silicon crystals grown with different methods and sensor designs are under investigation in order to optimize the sensors for such high fluences. Thin planar silicon sensors are good candidates to achieve this goal, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. Epitaxial pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 . 10{sup 16} cm{sup -2} have been characterized in laboratory measurements and beam tests at the DESY II facility. The active thickness of the strip sensors and pad diodes is 100 μm. In addition, strip sensors produced using other growth techniques with a thickness of 200 μm have been studied. In this talk, the results obtained for p-bulk sensors are shown.

  19. The ALPIDE pixel sensor chip for the upgrade of the ALICE Inner Tracking System

    Energy Technology Data Exchange (ETDEWEB)

    Aglieri Rinella, Gianluca, E-mail: gianluca.aglieri.rinella@cern.ch

    2017-02-11

    The ALPIDE chip is a CMOS Monolithic Active Pixel Sensor being developed for the Upgrade of the ITS of the ALICE experiment at the CERN Large Hadron Collider. The ALPIDE chip is implemented with a 180 nm CMOS Imaging Process and fabricated on substrates with a high-resistivity epitaxial layer. It measures 15 mm×30 mm and contains a matrix of 512×1024 pixels with in-pixel amplification, shaping, discrimination and multi-event buffering. The readout of the sensitive matrix is hit driven. There is no signaling activity over the matrix if there are no hits to read out and power consumption is proportional to the occupancy. The sensor meets the experimental requirements of detection efficiency above 99%, fake-hit probability below 10{sup −5} and a spatial resolution of 5 μm. The capability to read out Pb–Pb interactions at 100 kHz is provided. The power density of the ALPIDE chip is projected to be less than 35 mW/cm{sup 2} for the application in the Inner Barrel Layers and below 20 mW/cm{sup 2} for the Outer Barrel Layers, where the occupancy is lower. This contribution describes the architecture and the main features of the final ALPIDE chip, planned for submission at the beginning of 2016. Early results from the experimental qualification of full scale prototype predecessors are also reported. - Highlights: • The ALPIDE chip, an innovative CMOS pixel particle detector is described. • It achieves excellent detection performance figures and very low power consumption. • The characterization of prototypes confirms the achievement of the specifications.

  20. Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

    Energy Technology Data Exchange (ETDEWEB)

    Maria Rita Coluccia et al.

    2002-11-13

    The pixel detector in the BteV experiment at the Tevatron (Fermi Laboratory) is an important detector component for high-resolution tracking and vertex identification. For this task the hybrid pixel detector has to work in a very harsh radiation environment with up to 10{sup 14} minimum ionizing particles/cm{sup 2}/year. Radiation hardness of prototype n{sup +}/n/p{sup +} silicon pixel sensors has been investigated. We present Electrical characterization curves for irradiated prototype n{sup +}/n/p{sup +} sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.

  1. High resolution amplified pixel sensor architectures for large area digital mammography tomosynthesis

    Science.gov (United States)

    Taghibakhsh, Farhad; Karim, Karim S.

    2008-03-01

    Amplified Pixel Sensor (APS) architectures using two transistors per pixel are introduced in this research for digital mammography tomosynthesis that requires high resolution and low noise imaging capability. The fewer number of on-pixel elements and reduced pixel complexity result in a smaller pixel pitch and higher gain, which makes the two-transistor (2T) APS architectures promising for high resolution, low noise and high speed digital imaging including medical imaging modalities such as tomosynthesis and cone beam computed tomography. Measured results from in-house fabricated test arrays using amorphous silicon (a-Si) thin film transistor (TFTs) are presented as well as driving schemes for minimizing the threshold voltage metastability problem and increasing frame rate. The results indicate that a pixel input referred noise value of down to 220 electrons is achievable with a 50μm pixel pitch a-Si 2T APS.

  2. The FoCal prototype—an extremely fine-grained electromagnetic calorimeter using CMOS pixel sensors

    Science.gov (United States)

    de Haas, A. P.; Nooren, G.; Peitzmann, T.; Reicher, M.; Rocco, E.; Röhrich, D.; Ullaland, K.; van den Brink, A.; van Leeuwen, M.; Wang, H.; Yang, S.; Zhang, C.

    2018-01-01

    A prototype of a Si-W EM calorimeter was built with Monolithic Active Pixel Sensors as the active elements. With a pixel size of 30 μm it allows digital calorimetry, i.e. the particle's energy is determined by counting pixels, not by measuring the energy deposited. Although of modest size, with a width of only four Moliere radii, it has 39 million pixels. In this article the construction and tuning of the prototype is described. Results from beam tests are compared with predictions of GEANT-based Monte Carlo simulations. The shape of showers caused by electrons is shown in unprecedented detail. Results for energy and position resolution are also given.

  3. Supporting drivable region detection by minimising salient pixels generated through robot sensors

    CSIR Research Space (South Africa)

    Falola, O

    2010-11-01

    Full Text Available grayscale value as road images. Salient pixels provide difficulties during colour feature extraction on road images captured by a robot’s camera (sensor). In our method, a stream of road images is captured, pixels are extracted based on a RGB (red, green...

  4. Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line

    Science.gov (United States)

    Pohl, D.-L.; Hemperek, T.; Caicedo, I.; Gonella, L.; Hügging, F.; Janssen, J.; Krüger, H.; Macchiolo, A.; Owtscharenko, N.; Vigani, L.; Wermes, N.

    2017-06-01

    Pixel sensors using 8'' CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 × 1015 neq cm-2. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.

  5. A High-Speed CMOS Image Sensor with Global Electronic Shutter Pixels Using Pinned Diodes

    Science.gov (United States)

    Yasutomi, Keita; Tamura, Toshihiro; Furuta, Masanori; Itoh, Shinya; Kawahito, Shoji

    This paper describes a high-speed CMOS image sensor with a new type of global electronic shutter pixel. A global electronic shutter is necessary for imaging fast-moving objects without motion blur or distortion. The proposed pixel has two potential wells with pinned diode structure for two-stage charge transfer that enables a global electronic shuttering and reset noise canceling. A prototype high-speed image sensor fabricated in 0.18μm standard CMOS image sensor process consists of the proposed pixel array, 12-bit column-parallel cyclic ADC arrays and 192-channel digital outputs. The sensor achieves a good linearity at low-light intensity, demonstrating the perfect charge transfer between two pinned diodes. The input referred noise of the proposed pixel is measured to be 6.3 e-.

  6. Characterization of thin irradiated epitaxial silicon sensors for the CMS phase II pixel 2 upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Centis Vignali, Matteo; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg [Institut fuer Experimentalphysik, Universitaet Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany); Eckstein, Doris; Eichhorn, Thomas [Deutsches Elektronen Synchrotron, DESY, Notkestrasse 85, 22607 Hamburg (Germany)

    2015-07-01

    The high-luminosity upgrade of the Large Hadron Collider foreseen around 2023 resulted in the decision to replace the entire tracking system of the CMS experiment. The new pixel detector will be exposed to severe radiation corresponding to 1 MeV neutron equivalent fluence up to φ{sub eq} ∼ 10{sup 16} cm{sup -2} and ionizing dose of ∼ 5 MGy after 3000 fb{sup -1}. Thin planar silicon sensors are good candidates to build the pixel detector since the degradation of the signal is less severe than for thicker devices. A study has been carried out in order to characterize highly irradiated planar epitaxial silicon sensors with an active thickness of 100 μm, in addition other silicon materials with a thickness of 200 μm have been studied. The investigation includes pad diodes and strip detectors irradiated up to a fluence of φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2}. The diodes have been characterized using laboratory measurements, while measurements have been carried out at the DESY II test beam facility to characterize the charge collection of the strip detectors. In this talk, the results obtained for p-bulk sensors are shown.

  7. A counting pixel chip and sensor system for X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, P.; Hausmann, J.; Helmich, A.; Lindner, M.; Wermes, N. [Universitaet Bonn (Germany). Physikalisches Institut; Blanquart, L. [CNRS, Marseille (France). Centre de Physique des Particules

    1999-08-01

    Results obtained with a (photon) counting pixel imaging chip connected to a silicon pixel sensor using the bump and flip-chip technology are presented. The performance of the chip electronics is characterized by an average equivalent noise charge (ENC) below 135 e and a threshold spread of less than 35 e after individual threshold adjust, both measured with a sensor attached. First results on the imaging performance are also reported.

  8. Active pixel as dosimetric device for interventional radiology

    Energy Technology Data Exchange (ETDEWEB)

    Servoli, L., E-mail: leonello.servoli@pg.infn.it [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Baldaccini, F. [Universitá degli Studi di Perugia, Perugia (Italy); Biasini, M. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Universitá degli Studi di Perugia, Perugia (Italy); Checcucci, B. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Chiocchini, S.; Cicioni, R. [Universitá degli Studi di Perugia, Perugia (Italy); Conti, E. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Universitá degli Studi di Perugia, Perugia (Italy); Di Lorenzo, R. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); ASL 3 Umbria, Ospedale di Foligno, Foligno (Italy); Dipilato, A.C. [Universitá degli Studi di Perugia, Perugia (Italy); Esposito, A. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Universitá “Sapienza”, Roma (Italy); Fanó, L. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Universitá degli Studi di Perugia, Perugia (Italy); Paolucci, M. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); ASL 3 Umbria, Ospedale di Foligno, Foligno (Italy); Passeri, D. [Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, Perugia (Italy); Universitá degli Studi di Perugia, Perugia (Italy); Pentiricci, A. [ASL 1 Umbria, Ospedale di Cittá di Castello, Cittá di Castello (Italy); and others

    2013-08-21

    Interventional Radiology (IR) is a subspecialty of radiology comprehensive of all minimally invasive diagnostic and therapeutic procedures performed using radiological devices to obtain image guidance. The interventional procedures are potentially harmful for interventional radiologists and medical staff due to the X-ray diffusion by the patient's body. The characteristic energy range of the diffused photons spans few tens of keV. In this work we will present a proposal for a new X-ray sensing element in the energy range of interest for IR procedures. The sensing element will then be assembled in a dosimeter prototype, capable of real-time measurement, packaged in a small form-factor, with wireless communication and no external power supply to be used for individual operators dosimetry for IR procedures. For the sensor, which is the heart of the system, we considered three different Active Pixel Sensors (APS). They have shown a good capability as single X-ray photon detectors, up to several tens keV photon energy. Two dosimetric quantities have been considered, the number of detected photons and the measured energy deposition. Both observables have a linear dependence with the dose, as measured by commercial dosimeters. The uncertainties in the measurement are dominated by statistic and can be pushed at ∼5% for all the sensors under test.

  9. Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

    CERN Document Server

    INSPIRE-00052711; Boscardin, M.; Bosisio, L.; Calderini, G.; Chauveau, J.; Giacomini, G.; La Rosa, A.; Marchori, G.; Zorzi, N.

    2013-01-01

    The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \\times 10^{15} {\\rm n_{eq}}/{\\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

  10. Design of a 3D-IC multi-resolution digital pixel sensor

    Science.gov (United States)

    Brochard, N.; Nebhen, J.; Dubois, J.; Ginhac, D.

    2016-04-01

    This paper presents a digital pixel sensor (DPS) integrating a sigma-delta analog-to-digital converter (ADC) at pixel level. The digital pixel includes a photodiode, a delta-sigma modulation and a digital decimation filter. It features adaptive dynamic range and multiple resolutions (up to 10-bit) with a high linearity. A specific row decoder and column decoder are also designed to permit to read a specific pixel chosen in the matrix and its neighborhood of 4 x 4. Finally, a complete design with the CMOS 130 nm 3D-IC FaStack Tezzaron technology is also described, revealing a high fill-factor of about 80%.

  11. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.

    Science.gov (United States)

    Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît

    2009-01-01

    We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

  12. Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

    CERN Document Server

    Bomben, M

    2013-01-01

    The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of View the MathML source1×1015neq/cm2 comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb−1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity...

  13. Simulations of 3D-Si sensors for the innermost layer of the ATLAS pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Baselga, M.; Pellegrini, G., E-mail: giulio.pellegrini@imb-cnm.csic.es; Quirion, D.

    2017-03-01

    The LHC is expected to reach luminosities up to 3000 fb{sup −1} and the innermost layer of the ATLAS upgrade plans to cope with higher occupancy and to decrease the pixel size. 3D-Si sensors are a good candidate for the innermost layer of the ATLAS pixel upgrade since they exhibit good performance under high fluences and the new designs will have smaller pixel size to fulfill the electronics expectations. This paper reports TCAD simulations of the 3D-Si sensors designed at IMB-CNM with non-passing-through columns that are being fabricated for the next innermost layer of the ATLAS pixel upgrade. It shows the charge collection response before and after irradiation, and the response of 3D-Si sensors located at large η angles.

  14. Amplified pixel sensor architectures for low dose computed tomography using silicon thin film technology

    Science.gov (United States)

    Taghibakhsh, F.; Karim, K. S.

    2007-03-01

    Cone beam computed tomography (CBCT) has been recently reported using flat panel imagers (FPI). Here, detector technology capable of high speed imaging, high spatial resolution, large volume coverage, better contrast resolution and, in particular, lowered patient dose is required. Employing active matrix flat panel imagers (AMFPIs) as cone beam CT detectors has been proposed as a solution for improving volume coverage, contrast and resolution; however, clinical evaluations have shown that they suffer from low speed read out. Unlike passive pixel architecture which is currently the state-of-the-art technology for AMFPIs, our preliminary studies have shown that novel amplified pixel sensor (APS) architectures can overcome the low readout speed, and moreover, they provide gain which can be traded for higher frame rate and lower X-ray doses. Although APS architectures can meet the high dynamic range and low noise requirements of CT imaging, linearity and variations between pixel characteristics are major issues. In this study we will investigate novel APS architectures to address these concerns.

  15. Test-beam activities and results for the ATLAS ITk pixel detector

    Science.gov (United States)

    Bisanz, T.

    2017-12-01

    The Phase-II upgrade of the LHC aims at an increase of the instantaneous luminosity up to about 5×1034 cm‑2 s‑1. To cope with the resulting challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300 hits/FE/s as well as a fluence of around 2×1016 neq cm‑2. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about 10 m2. These range from thin planar silicon, 3D silicon, to active CMOS sensors. After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in ITk. The setups used in the ITk Pixel testbeam campaigns will be presented, including the common track reconstruction and analysis software. Results from the latest measurements will be shown, highlighting some of the developments and challenges for the ITk Pixel sensors.

  16. Testbeam Measurements with Pixel Sensors for the ATLAS Insertable b-Layer Project

    CERN Document Server

    George, Matthias; Quadt, Arnulf

    During the current long machine shutdown of the Large Hadron Collider (LHC) at CERN (Geneva), the innermost part of the ATLAS experiment, the pixel detector, is upgraded. The existing ATLAS pixel system is equipped with silicon sensors, organized in three barrel layers and three end cap disks on either side. To cope with the higher instantaneous luminosity in the future and for compensation of radiation damages due to past and near future running time of the experiment, a new fourth pixel detector layer is inserted into the existing system. This additional pixel layer is called “Insertable b-Layer” (IBL). The IBL is a detector system, based on silicon pixel sensors. Due to the smaller radius, compared to all other detectors of the ATLAS experiment, it has to be more radiation tolerant, than e.g. the current pixel layers. Furthermore, a reduced pixel size is necessary to cope with the expected higher particle flux. During the planning phase for the IBL upgrade, three different sensor technologies were comp...

  17. High-speed imaging at high x-ray energy: CdTe sensors coupled to charge-integrating pixel array detectors

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Julian; Tate, Mark W.; Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Purohit, Prafull [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Chamberlain, Darol [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

    2016-07-27

    Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.

  18. Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    INSPIRE-00052711; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; Ducourthial, Audrey; Giacomini, Gabriele; Marchiori, Giovanni; Zorzi, Nicola

    2016-01-01

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

  19. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Beccherle, R. [Istituto Nazionale di Fisica Nucleare, Sez. di Pisa (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste (Italy); INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2016-09-21

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

  20. Small pixel cross-talk MTF and its impact on MWIR sensor performance

    Science.gov (United States)

    Goss, Tristan M.; Willers, Cornelius J.

    2017-05-01

    As pixel sizes reduce in the development of modern High Definition (HD) Mid Wave Infrared (MWIR) detectors the interpixel cross-talk becomes increasingly difficult to regulate. The diffusion lengths required to achieve the quantum efficiency and sensitivity of MWIR detectors are typically longer than the pixel pitch dimension, and the probability of inter-pixel cross-talk increases as the pixel pitch/diffusion length fraction decreases. Inter-pixel cross-talk is most conveniently quantified by the focal plane array sampling Modulation Transfer Function (MTF). Cross-talk MTF will reduce the ideal sinc square pixel MTF that is commonly used when modelling sensor performance. However, cross-talk MTF data is not always readily available from detector suppliers, and since the origins of inter-pixel cross-talk are uniquely device and manufacturing process specific, no generic MTF models appear to satisfy the needs of the sensor designers and analysts. In this paper cross-talk MTF data has been collected from recent publications and the development for a generic cross-talk MTF model to fit this data is investigated. The resulting cross-talk MTF model is then included in a MWIR sensor model and the impact on sensor performance is evaluated in terms of the National Imagery Interoperability Rating Scale's (NIIRS) General Image Quality Equation (GIQE) metric for a range of fnumber/ detector pitch Fλ/d configurations and operating environments. By applying non-linear boost transfer functions in the signal processing chain, the contrast losses due to cross-talk may be compensated for. Boost transfer functions, however, also reduce the signal to noise ratio of the sensor. In this paper boost function limits are investigated and included in the sensor performance assessments.

  1. Silicon Sensors for the Upgrades of the CMS Pixel Detector

    CERN Document Server

    Centis Vignali, Matteo; Schleper, Peter

    2015-01-01

    The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accel- erator and its injection chain. Two major upgrades will take place in the next years. The rst upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2 10 34 cm-2 s-1 A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5 10 34 cm-2 s1. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The rst upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout elec- tronics that allow ecient data taking up to a luminosity of 2 10 34 cm-2s-1,twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at dierent institutes. Ham...

  2. Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

    Energy Technology Data Exchange (ETDEWEB)

    Beimforde, Michael

    2010-07-19

    To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 10{sup 35}/cm{sup 2}s{sup 1} is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).10{sup 16} 1-MeV-neutrons per square centimeter (n{sub eq}/cm{sup 2}). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 {mu}m and 150 {mu}m proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive

  3. arXiv The FoCal prototype - an extremely fine-grained electromagnetic calorimeter using CMOS pixel sensors

    CERN Document Server

    Nooren, G.; Peitzmann, T.; Reicher, M.; Rocco, E.; Roehrich, D.; Ullaland, K.; van den Brink, A.; van Leeuwen, M.; Wang, H.; Yang, S.; Zhang, C.

    A prototype of a Si-W EM calorimeter was built with Monolithic Active Pixel Sensors as the active elements. With a pixelsize of 30 $\\mu$m it allows digital calorimetry, i.e. the particles' energy is determined by counting pixels, not by measuring the energy deposited. Although of modest size, with a width of only four Moliere radii, it has 39 million pixels. We describe the construction and tuning of the prototype and present results from beam tests and compare them with predictions of GEANT-based Monte Carlo simulations. We show the shape of showers caused by electrons in unprecedented detail. Results for energy and position resolution will also be given.

  4. Pixel electronic noise as a function of position in an active matrix flat panel imaging array

    Science.gov (United States)

    Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

    2010-04-01

    We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

  5. An Ultrahigh-Resolution Digital Image Sensor with Pixel Size of 50 nm by Vertical Nanorod Arrays.

    Science.gov (United States)

    Jiang, Chengming; Song, Jinhui

    2015-07-01

    The pixel size limit of existing digital image sensors is successfully overcome by using vertically aligned semiconducting nanorods as the 3D photosensing pixels. On this basis, an unprecedentedly high-resolution digital image sensor with a pixel size of 50 nm and a resolution of 90 nm is fabricated. The ultrahigh-resolution digital image sensor can heavily impact the field of visual information. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Pixel Detectors

    CERN Document Server

    Wermes, Norbert

    2005-01-01

    Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel technology which can be considered the state of the art in this field of instrumentation. A development period of almost 10 years has resulted in pixel detector modules which can stand the extreme rate and timing requirements as well as the very harsh radiation environment at the LHC without severe compromises in performance. From these developments a number of different applications have spun off, most notably for biomedical imaging. Beyond hybrid pixels, a number of monolithic or semi-monolithic developments, which do not require complicated hybridization but come as single sensor/IC entities, have appeared and are currently developed to greater maturity. Most advanced in terms of maturity are so called CMOS active pixels and DEPFET pixels. The present state in the ...

  7. Probing and irradiation tests of ALICE pixel chip wafers and sensors

    CERN Document Server

    Cinausero, M; Antinori, F; Chochula, P; Dinapoli, R; Dima, R; Fabris, D; Galet, G; Lunardon, M; Manea, C; Marchini, S; Martini, S; Moretto, S; Pepato, Adriano; Prete, G; Riedler, P; Scarlassara, F; Segato, G F; Soramel, F; Stefanini, G; Turrisi, R; Vannucci, L; Viesti, G

    2004-01-01

    In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICE1LHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results. (6 refs).

  8. Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector

    Science.gov (United States)

    Ono, Shun; Togawa, Manabu; Tsuji, Ryoji; Mori, Teppei; Yamada, Miho; Arai, Yasuo; Tsuboyama, Toru; Hanagaki, Kazunori

    2017-02-01

    We have been developing a new monolithic pixel sensor with silicon-on-insulator (SOI) technology for the International Linear Collider (ILC) vertex detector system. The SOI monolithic pixel detector is realized using standard CMOS circuits fabricated on a fully depleted sensor layer. The new SOI sensor SOFIST can store both the position and timing information of charged particles in each 20×20 μm2 pixel. The position resolution is further improved by the position weighted with the charges spread to multiple pixels. The pixel also records the hit timing with an embedded time-stamp circuit. The sensor chip has column-parallel analog-to-digital conversion (ADC) circuits and zero-suppression logic for high-speed data readout. We are designing and evaluating some prototype sensor chips for optimizing and minimizing the pixel circuit.

  9. Measurement of the two track separation capability of hybrid pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Muñoz, F.J., E-mail: Francisca.MunozSanchez@manchester.ac.uk [University of Manchester (United Kingdom); Battaglia, M. [University of California, Santa Cruz, United States of America (United States); CERN, The European Organization for Nuclear Research (Switzerland); Da Vià, C. [University of Manchester (United Kingdom); La Rosa, A. [University of California, Santa Cruz, United States of America (United States); Dann, N. [University of Manchester (United Kingdom)

    2017-02-11

    Large Hadron Collider experiments face new challenges in Run-2 conditions due to the increased beam energy, the interest for searches of new physics signals with higher jet pT and the consequent longer decay length of heavy hadrons. In this new scenario, the capability of the innermost pixel sensors to distinguish tracks in very dense environment becomes crucial for efficient tracking and flavour tagging performance. In this work, we discuss the measurement in a test beam of the two track separation capability of hybrid pixel sensors using the interaction particles out of the collision of high energy pions on a thin copper target. With this method we are able to evaluate the effect of merged hits in the sensors under test due to tracks closer than the sensor spatial granularity in terms of collected charge, multiplicity and reconstruction efficiency. - Highlights: • Measurement of the two-track separation capability of hybrid pixel sensors. • Emulating track dense environment with a cooper target in a test beam. • Cooper target in between telescope arms to create vertices. • Validation of simulation and reconstruction algorithm for future vertex detectors. • New qualification method for pixel modules in track dense environments.

  10. Comparing three spaceborne optical sensors via fine scale pixel ...

    African Journals Online (AJOL)

    User @

    If an overview of an urban area is required, RapidEye will provide an above average (0.69 κ) result with the ... four-band IKONOS-like Spectral Rule-based decision tree Classifier (ISRC) is eligible for use in operational .... between three selected sensors at spectral level, the validation of classification accuracies, and the.

  11. Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography

    Energy Technology Data Exchange (ETDEWEB)

    Elbakri, I A; Rickey, D W [CancerCare Manitoba, Winnipeg, MB (Canada); McIntosh, B J [Department of Physics and Astronomy, University of Manitoba, Winnipeg, MB (Canada)], E-mail: Idris.Elbakri@cancercare.mb.ca

    2009-03-21

    We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 {mu}m detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

  12. Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography

    Science.gov (United States)

    Elbakri, I A; McIntosh, B J; Rickey, D W

    2009-03-01

    We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 µm detector element (del) size and an active area of 5 cm × 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

  13. Measurement of the two track separation capability of hybrid pixel sensors

    Science.gov (United States)

    Muñoz, F. J.; Battaglia, M.; Da Vià, C.; La Rosa, A.; Dann, N.

    2017-02-01

    Large Hadron Collider experiments face new challenges in Run-2 conditions due to the increased beam energy, the interest for searches of new physics signals with higher jet pT and the consequent longer decay length of heavy hadrons. In this new scenario, the capability of the innermost pixel sensors to distinguish tracks in very dense environment becomes crucial for efficient tracking and flavour tagging performance. In this work, we discuss the measurement in a test beam of the two track separation capability of hybrid pixel sensors using the interaction particles out of the collision of high energy pions on a thin copper target. With this method we are able to evaluate the effect of merged hits in the sensors under test due to tracks closer than the sensor spatial granularity in terms of collected charge, multiplicity and reconstruction efficiency.

  14. Optimisation of CMOS pixel sensors for high performance vertexing and tracking

    CERN Document Server

    Baudot, Jérôme; Claus, Gilles; Dulinski, Wojciech; Dorokhov, Andrei; Goffe, Mathieu; Hu-Guo, Christine; Molnar, Levente; Sanchez-Castro, Xitzel; Senyukov, Serhiy; Winter, Marc

    2013-01-01

    CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.

  15. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

    Directory of Open Access Journals (Sweden)

    Guo-Neng Lu

    2009-01-01

    Full Text Available We present a single-transistor pixel for CMOS image sensors (CIS. It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.

  16. A 45 nm Stacked CMOS Image Sensor Process Technology for Submicron Pixel.

    Science.gov (United States)

    Takahashi, Seiji; Huang, Yi-Min; Sze, Jhy-Jyi; Wu, Tung-Ting; Guo, Fu-Sheng; Hsu, Wei-Cheng; Tseng, Tung-Hsiung; Liao, King; Kuo, Chin-Chia; Chen, Tzu-Hsiang; Chiang, Wei-Chieh; Chuang, Chun-Hao; Chou, Keng-Yu; Chung, Chi-Hsien; Chou, Kuo-Yu; Tseng, Chien-Hsien; Wang, Chuan-Joung; Yaung, Dun-Nien

    2017-12-05

    A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e-/s at 60 °C, an ultra-low read noise of 0.90 e-·rms, a high full well capacity (FWC) of 4100 e-, and blooming of 0.5% in 0.9 μm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 μm pixels is discussed.

  17. A measurement of Lorentz angle of radiation-hard pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Aleppo, Mario E-mail: mario.aleppo@mi.infn.it

    2001-06-01

    Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and non-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

  18. Slim edge studies, design and quality control of planar ATLAS IBL pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wittig, Tobias

    2013-05-08

    One of the four large experiments at the LHC at CERN is the ATLAS detector, a multi purpose detector. Its pixel detector, composed of three layers, is the innermost part of the tracker. As it is closest to the interaction point, it represents a basic part of the track reconstruction. Besides the requested high resolution one main requirement is the radiation hardness. In the coming years the radiation damage will cause deteriorations of the detector performance. With the planned increase of the luminosity, especially after the upgrade to the High Luminosity LHC, this radiation damage will be even intensified. This circumstance necessitates a new pixel detector featuring improved radiation hard sensors and read-out chips. The present shutdown of the LHC is already utilized to insert an additional b-layer (IBL) into the existing ATLAS pixel detector. The current n-in-n pixel sensor design had to be adapted to the new read-out chip and the module specifications. The new stave geometry requests a reduction of the inactive sensor edge. In a prototype wafer production all modifications have been implemented. The sensor quality control was supervised which led to the decision of the final sensor thickness. In order to evaluate the performance of the sensor chip assemblies with an innovative slim edge design, they have been operated in test beam setups before and after irradiation. Furthermore, the quality control of the planar IBL sensor wafer production was supervised from the stage of wafer delivery to that before the flip chip process to ensure a sufficient amount of functional sensors for the module production.

  19. Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

    Science.gov (United States)

    Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

    2000-01-01

    Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

  20. Test-beam activities and results for the ATLAS ITk pixel detector

    CERN Document Server

    Bisanz, Tobias; The ATLAS collaboration

    2017-01-01

    The Phase-II upgrade of the LHC will result in an increase of the instantaneous luminosity up to about 5×1034 cm−2s−1. To cope with the challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300~hits/FE/s as well as a fluence of 2×1016neqcm−2. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about 10~m2. These range from thin planar silicon, over 3D silicon, to active CMOS sensors. After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in ITk. The setups used in the ITk Pixel testbeam campaigns will be presented, inclu...

  1. Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors

    Directory of Open Access Journals (Sweden)

    Matteo Perenzoni

    2016-05-01

    Full Text Available This paper reviews the state of the art of single-photon avalanche diode (SPAD image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 μm and high fill factor (>20% as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved.

  2. Performance of novel silicon n-in-p planar Pixel Sensors

    CERN Document Server

    Gallrapp, C; Macchiolo, A; Nisius, R; Pernegger, H; Richter, R H; Weigell, P

    2012-01-01

    The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here, are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5 x 10**15 neq/cm2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency before irradiation, and a high collected charge for a device irradiated at a fluence of 5 x 10**15 neq/cm2 .

  3. Experiment on digital CDS with 33-M pixel 120-fps super hi-vision image sensor

    Science.gov (United States)

    Yonai, J.; Yasue, T.; Kitamura, K.; Hayashida, T.; Watabe, T.; Shimamoto, H.; Kawahito, S.

    2014-03-01

    We have developed a CMOS image sensor with 33 million pixels and 120 frames per second (fps) for Super Hi-Vision (SHV:8K version of UHDTV). There is a way to reduce the fixed pattern noise (FPN) caused in CMOS image sensors by using digital correlated double sampling (digital CDS), but digital CDS methods need high-speed analog-to-digital conversion and are not applicable to conventional UHDTV image sensors due to their speed limit. Our image sensor, on the other hand, has a very fast analog-to-digital converter (ADC) using "two-stage cyclic ADC" architecture that is capable of being driven at 120-fps, which is double the normal frame rate for TV. In this experiment, we performed experimental digital CDS using the high-frame rate UHDTV image sensor. By reading the same row twice at 120-fps and subtracting dark pixel signals from accumulated pixel signals, we obtained a 60-fps equivalent video signal with digital noise reduction. The results showed that the VFPN was effectively reduced from 24.25 e-rms to 0.43 e-rms.

  4. Test-beam measurements and simulation studies of thin pixel sensors for the CLIC vertex detector

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00574329; Dannheim, Dominik

    The multi-$TeV$ $e^{+}e^{-}$ Compact Linear Collider (CLIC) is one of the options for a future high-energy collider for the post-LHC era. It would allow for searches of new physics and simultaneously offer the possibility for precision measurements of standard model processes. The physics goals and experimental conditions at CLIC set high precision requirements on the vertex detector made of pixel detectors: a high pointing resolution of 3 $\\mu m$, very low mass of 0.2% $X_{0}$ per layer, 10 ns time stamping capability and low power dissipation of 50 mW/$cm^{2}$ compatible with air-flow cooling. In this thesis, hybrid assemblies with thin active-edge planar sensors are characterised through calibrations, laboratory and test-beam measurements. Prototypes containing 50 $\\mu m$ to 150 $\\mu m$ thin planar silicon sensors bump-bonded to Timepix3 readout ASICs with 55 $\\mu m$ pitch are characterised in test beams at the CERN SPS in view of their detection efficiency and single-point resolution. A digitiser for AllP...

  5. Radiation resistance of double-type double-sided 3D pixel sensors

    CERN Document Server

    Fernandez, M; Lozano, M; Munoz, F.J; Pellegrini, G; Quirion, D; Rohe, T; Vila, I

    2013-01-01

    The proposed high-luminosity upgrade of the Large Hadron Collider is expected to increase the instantaneous luminosity at the experiments' interaction points by a factor of ten. The vertex detector will be the subsystem most affected by the luminosity increase, raising substantially their occupancy and radiation-induced damage. To preserve the vertex physics performance under these new conditions, current pixel technologies have to be improved. Hybrid pixel sensors with double-sided double-type vertical electrodes (3D sensors) are becoming a mature technology for the detector layers closest to the interaction point due to their intrinsic radiation hardness. In addition, the double-sided implementation of the 3D pixel technology provides some additional technical advantages with respect to the single-sided implementation. For this study, 3D pixel sensors manufactured at the Centro Nacional de Microelectrónica of Barcelona (IMB-CNM) have been bonded to the PSI46 readout chip currently used by the Compact Muon ...

  6. Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

    CERN Document Server

    Benoit, M.; Casse, G.; Chen, H.; Chen, K.; Bello, F.A.Di; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Peric, I.; Rimoldi, M.; Ristic, B.; Vicente Barrero Pinto, M.; Vossebeld, J.; Weber, M.; Weston, T.; Wu, W.; Xu, L.; Zaffaroni, E.

    2018-02-08

    HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\\cdot 10^{14}$ and $5\\cdot 10^{15}$ 1-MeV-n$_\\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\\,$V. The sample irradiated to a fluence of $1\\cdot 10^{15}$ n$_\\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit ...

  7. Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

    CERN Document Server

    Wallangen, Veronica; The ATLAS collaboration

    2017-01-01

    Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

  8. 3D-FBK Pixel sensors: recent beam tests results with irradiated devices

    CERN Document Server

    Micelli, A; Sandaker, H; Stugu, B; Barbero, M; Hugging, F; Karagounis, M; Kostyukhin, V; Kruger, H; Tsung, J W; Wermes, N; Capua, M; Fazio, S; Mastroberardino, A; Susinno, G; Gallrapp, C; Di Girolamo, B; Dobos, D; La Rosa, A; Pernegger, H; Roe, S; Slavicek, T; Pospisil, S; Jakobs, K; Kohler, M; Parzefall, U; Darbo, G; Gariano, G; Gemme, C; Rovani, A; Ruscino, E; Butter, C; Bates, R; Oshea, V; Parker, S; Cavalli-Sforza, M; Grinstein, S; Korokolov, I; Pradilla, C; Einsweiler, K; Garcia-Sciveres, M; Borri, M; Da Via, C; Freestone, J; Kolya, S; Lai, C H; Nellist, C; Pater, J; Thompson, R; Watts, S J; Hoeferkamp, M; Seidel, S; Bolle, E; Gjersdal, H; Sjobaek, K N; Stapnes, S; Rohne, O; Su, D; Young, C; Hansson, P; Grenier, P; Hasi, J; Kenney, C; Kocian, M; Jackson, P; Silverstein, D; Davetak, H; DeWilde, B; Tsybychev, D; Dalla Betta, G F; Gabos, P; Povoli, M; Cobal, M; Giordani, M P; Selmi, L; Cristofoli, A; Esseni, D; Palestri, P; Fleta, C; Lozano, M; Pellegrini, G; Boscardin, M; Bagolini, A; Piemonte, C; Ronchin, S; Zorzi, N; Hansen, T E; Hansen, T; Kok, A; Lietaer, N; Kalliopuska, J; Oja, A

    2011-01-01

    The Pixel detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider (LHC), and plays a key role in the reconstruction of the primary and secondary vertices of short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration (VLSI) and Micro-Electro-Mechanical-Systems (MEMS) where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradi...

  9. CMOS pixel sensor for a space radiation monitor with very low cost, power and mass

    Science.gov (United States)

    Zhou, Y.; Baudot, J.; Duverger, C.; Hu-Guo, Ch; Hu, Y.; Winter, M.

    2012-12-01

    With the purpose of measuring simultaneously the proton and electron environment using a single sensitive device, we propose a CMOS pixel sensor featuring a 10 mm2 sensitive area, counting capability up to 107/cm2/s and with a minimal error due to pileup of two close particle impacts on the matrix. The proposed architecture includes a 64 × 64 square pixel matrix with 50 μm pitch size, 64 column level 3-bit ADCs to provide an appropriate energy resolution, and an embedded digital logic that directly calculates the particle properties from the hit information provided by the pixels. To validate experimentally the expected performance within the year 2012, a first prototype has been designed and fabricated in a 0.35 μm process without the integrated digital processing part. The device simulation and design architecture are presented.

  10. Overview of Silicon Pixel Sensor Development for the ATLAS Insertable B-Layer (IBL)

    CERN Document Server

    Grinstein, S; The ATLAS collaboration

    2011-01-01

    The ATLAS Pixel Detector is the innermost part of the ATLAS tracking system and is critical for track and vertex reconstruction. In order to preserve the tracking performance notwithstanding the increasing instantaneous luminosity delivered by the LHC, ATLAS plans to introduce a new pixel layer (IBL) mounted directly on a reduced diameter beam pipe. The IBL will have to sustain an estimated radiation dose, including safety factors, of $5 imes 10^{15}$~n$_{eq}$/cm$^2$. Two sensor technologies are currently being considered for the IBL, planar n-on-n slim edge and 3D double sided designs. Results of the characterization, irradiation and beam test studies of IBL pixel devices are presented.

  11. DEPFET active pixel detectors for a future linear $e^+e^-$ collider

    CERN Document Server

    Alonso, O; Dieguez, A; Dingfelder, J; Hemperek, T; Kishishita, T; Kleinohl, T; Koch, M; Krueger, H; Lemarenko, M; Luetticke, F; Marinas, C; Schnell, M; Wermes, N; Campbell, A; Ferber, T; Kleinwort, C; Niebuhr, C; Soloviev, Y; Steder, M; Volkenborn, R; Yaschenko, S; Fischer, P; Kreidl, C; Peric, I; Knopf, J; Ritzert, M; Curras, E; Lopez-Virto, A; Moya, D; Vila, I; Boronat, M; Esperante, D; Fuster, J; Garcia Garcia, I; Lacasta, C; Oyanguren, A; Ruiz, P; Timon, G; Vos, M; Gessler, T; Kuehn, W; Lange, S; Muenchow, D; Spruck, B; Frey, A; Geisler, C; Schwenker, B; Wilk, F; Barvich, T; Heck, M; Heindl, S; Lutz, O; Mueller, Th; Pulvermacher, C; Simonis, H.J; Weiler, T; Krausser, T; Lipsky, O; Rummel, S; Schieck, J; Schlueter, T; Ackermann, K; Andricek, L; Chekelian, V; Chobanova, V; Dalseno, J; Kiesling, C; Koffmane, C; Gioi, L.Li; Moll, A; Moser, H.G; Mueller, F; Nedelkovska, E; Ninkovic, J; Petrovics, S; Prothmann, K; Richter, R; Ritter, A; Ritter, M; Simon, F; Vanhoefer, P; Wassatsch, A; Dolezal, Z; Drasal, Z; Kodys, P; Kvasnicka, P; Scheirich, J

    2013-01-01

    The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\\mathrm{\\mathbf{\\mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\\mathbf{e^+ e^-}$ collider.

  12. High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

    Science.gov (United States)

    Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

    2017-09-01

    We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

  13. The LAMBDA photon-counting pixel detector and high-Z sensor development

    Science.gov (United States)

    Pennicard, D.; Smoljanin, S.; Struth, B.; Hirsemann, H.; Fauler, A.; Fiederle, M.; Tolbanov, O.; Zarubin, A.; Tyazhev, A.; Shelkov, G.; Graafsma, H.

    2014-12-01

    Many X-ray experiments at third-generation synchrotrons benefit from using single-photon-counting detectors, due to their high signal-to-noise ratio and potential for high-speed measurements. LAMBDA (Large Area Medipix3-Based Detector Array) is a pixel detector system based on the Medipix3 readout chip. It combines the features of Medipix3, such as a small pixel size of 55 μm and flexible functionality, with a large tileable module design consisting of 12 chips (1536 × 512 pixels) and a high-speed readout system capable of running at 2000 frames per second. To enable high-speed experiments with hard X-rays, the LAMBDA system has been combined with different high-Z sensor materials. Room-temperature systems using GaAs and CdTe systems have been produced and tested with X-ray tubes and at synchrotron beamlines. Both detector materials show nonuniformities in their raw image response, but the pixel yield is high and the uniformity can be improved by flat-field correction, particularly in the case of GaAs. High-frame-rate experiments show that useful information can be gained on millisecond timescales in synchrotron experiments with these sensors.

  14. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Energy Technology Data Exchange (ETDEWEB)

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  15. Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments

    CERN Document Server

    Senyukov, Serhiy; Besson, Auguste; Claus, Giles; Cousin, Loic; Dulinski, Wojciech; Goffe, Mathieu; Hippolyte, Boris; Maria, Robert; Molnar, Levente; Sanchez Castro, Xitzel; Winter, Marc

    2014-01-01

    CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch ($\\sim 20 \\mu m$) and low material budget ($\\sim 0.2-0.3\\% X_0$) per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS intrinsic potential. The permanent evolution of commercial CMOS processes towards smaller feature sizes and high resistivity ...

  16. A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering

    Science.gov (United States)

    Lioe, DeXing; Mars, Kamel; Takasawa, Taishi; Yasutomi, Keita; Kagawa, Keiichiro; Hashimoto, Mamoru; Kawahito, Shoji

    2016-03-01

    A CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering (SRS) spectroscopy is presented in this paper. The effective SRS signal from the stimulated emission of SRS mechanism is very small in contrast to the offset of a probing laser source, which is in the ratio of 10-4 to 10-5. In order to extract this signal, the common offset component is removed, and the small difference component is sampled using switched-capacitor integrator with a fully differential amplifier. The sampling is performed over many integration cycles to achieve appropriate amplification. The lock-in pixels utilizes high-speed lateral electric field charge modulator (LEFM) to demodulate the SRS signal which is modulated at high-frequency of 20MHz. A prototype chip is implemented using 0.11μm CMOS image sensor technology.

  17. Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

    Science.gov (United States)

    Isikman, Serhan O; Greenbaum, Alon; Luo, Wei; Coskun, Ahmet F; Ozcan, Aydogan

    2012-01-01

    We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2). This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ± 50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3) across a sample volume of ~5 mm(3), which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

  18. Giga-pixel lensfree holographic microscopy and tomography using color image sensors.

    Directory of Open Access Journals (Sweden)

    Serhan O Isikman

    Full Text Available We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ~350 nm lateral resolution, corresponding to a numerical aperture of ~0.8, across a field-of-view of ~20.5 mm(2. This constitutes a digital image with ~0.7 Billion effective pixels in both amplitude and phase channels (i.e., ~1.4 Giga-pixels total. Furthermore, by changing the illumination angle (e.g., ± 50° and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ~0.35 µm × 0.35 µm × ~2 µm, in x, y and z, respectively, creating an effective voxel size of ~0.03 µm(3 across a sample volume of ~5 mm(3, which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode.

  19. Giga-Pixel Lensfree Holographic Microscopy and Tomography Using Color Image Sensors

    Science.gov (United States)

    Coskun, Ahmet F.; Ozcan, Aydogan

    2012-01-01

    We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns. Without physically removing these color filters coated on the sensor chip, we synthesize pixel super-resolved lensfree holograms, which are then reconstructed to achieve ∼350 nm lateral resolution, corresponding to a numerical aperture of ∼0.8, across a field-of-view of ∼20.5 mm2. This constitutes a digital image with ∼0.7 Billion effective pixels in both amplitude and phase channels (i.e., ∼1.4 Giga-pixels total). Furthermore, by changing the illumination angle (e.g., ±50°) and scanning a partially-coherent light source across two orthogonal axes, super-resolved images of the same specimen from different viewing angles are created, which are then digitally combined to synthesize tomographic images of the object. Using this dual-axis lensfree tomographic imager running on a color sensor-chip, we achieve a 3D spatial resolution of ∼0.35 µm×0.35 µm×∼2 µm, in x, y and z, respectively, creating an effective voxel size of ∼0.03 µm3 across a sample volume of ∼5 mm3, which is equivalent to >150 Billion voxels. We demonstrate the proof-of-concept of this lensfree optical tomographic microscopy platform on a color CMOS image sensor by creating tomograms of micro-particles as well as a wild-type C. elegans nematode. PMID:22984606

  20. Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

    CERN Document Server

    Winter, Marc; Besson, Auguste; Claus, Gilles; Dorokhov, Andrei; Goffe, Mathieu; Hu-Guo, Christine; Morel, Frederic; Valin, Isabelle; Voutsinas, Georgios; Zhang, Liang

    2012-01-01

    CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.

  1. Performance of a Medipix3RX spectroscopic pixel detector with a high resistivity gallium arsenide sensor.

    Science.gov (United States)

    Hamann, Elias; Koenig, Thomas; Zuber, Marcus; Cecilia, Angelica; Tyazhev, Anton; Tolbanov, Oleg; Procz, Simon; Fauler, Alex; Baumbach, Tilo; Fiederle, Michael

    2015-03-01

    High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detector's spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

  2. Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

    CERN Document Server

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Giubilato, Piero; Mattiazzo, Serena; Pantano, Devis

    2012-01-01

    This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.

  3. Fixed Pattern Noise pixel-wise linear correction for crime scene imaging CMOS sensor

    Science.gov (United States)

    Yang, Jie; Messinger, David W.; Dube, Roger R.; Ientilucci, Emmett J.

    2017-05-01

    Filtered multispectral imaging technique might be a potential method for crime scene documentation and evidence detection due to its abundant spectral information as well as non-contact and non-destructive nature. Low-cost and portable multispectral crime scene imaging device would be highly useful and efficient. The second generation crime scene imaging system uses CMOS imaging sensor to capture spatial scene and bandpass Interference Filters (IFs) to capture spectral information. Unfortunately CMOS sensors suffer from severe spatial non-uniformity compared to CCD sensors and the major cause is Fixed Pattern Noise (FPN). IFs suffer from "blue shift" effect and introduce spatial-spectral correlated errors. Therefore, Fixed Pattern Noise (FPN) correction is critical to enhance crime scene image quality and is also helpful for spatial-spectral noise de-correlation. In this paper, a pixel-wise linear radiance to Digital Count (DC) conversion model is constructed for crime scene imaging CMOS sensor. Pixel-wise conversion gain Gi,j and Dark Signal Non-Uniformity (DSNU) Zi,j are calculated. Also, conversion gain is divided into four components: FPN row component, FPN column component, defects component and effective photo response signal component. Conversion gain is then corrected to average FPN column and row components and defects component so that the sensor conversion gain is uniform. Based on corrected conversion gain and estimated image incident radiance from the reverse of pixel-wise linear radiance to DC model, corrected image spatial uniformity can be enhanced to 7 times as raw image, and the bigger the image DC value within its dynamic range, the better the enhancement.

  4. Test-beam activities and results for the ATLAS ITk pixel detector

    CERN Document Server

    Bisanz, Tobias; The ATLAS collaboration

    2017-01-01

    The Phase-II upgrade of the LHC will result in an increase of the instantaneous luminosity up to about $5\\times10^{34}~\\text{cm}^{-2}\\text{s}^{-1}$. To cope with the resulting challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300~hits/FE/s as well as a fluence of $2\\times10^{16}~\\text{n}_\\text{eq}\\text{cm}^{-2}$. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about $10~\\text{m}^2$. These range from thin planar silicon, over 3D silicon, to active CMOS sensors.\\par After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in...

  5. Cost effective flip chip assembly and interconnection technologies for large area pixel sensor applications

    Science.gov (United States)

    Fritzsch, T.; Jordan, R.; Oppermann, H.; Ehrmann, O.; Töpper, M.; Baumgartner, T.; Lang, K.-D.

    2011-09-01

    Much of the cost of manufacturing pixel detectors is due to bumping and flip chip assembly of the readout chips onto sensor tiles, even if it is done on wafer level. To address this issue, Fraunhofer IZM investigated two new technological approaches, namely screen printing using dry film resist and chip-to-wafer assembly. In the first approach, solder bumps with diameters of 80 and 25 μm in pitches of 110 and 60 μm, respectively, were produced by screen-printing solder paste using a photo-structured dry film resist. Results indicated that the technology is a viable high yield and low cost bumping process. The second approach was developed to decrease the number of manual handling steps in pixel module manufacturing, which is critical for reducing processing time and cost. Here, chip designs on 200 mm readout chip (ROC) wafers and 150 mm sensor wafers were especially adapted for chip-to-wafer assembly and to ensure that the interconnection yield and reliability could be tested. After bumping and dicing of the readout chip wafer and UBM plating on the sensor wafer, individual dice were flip chip mounted on the pre-diced sensor wafer. This paper describes the technological steps, key processing parameters and first results for both technologies.

  6. The upgrade of the ALICE Inner Tracking System - Status of the R&D; on monolithic silicon pixel sensors

    CERN Document Server

    Van Hoorne, Jacobus Willem

    2014-01-01

    s a major part of its upgrade plans, the ALICE experiment schedules the installation of a novel Inner Tracking System (ITS) during the Long Shutdown 2 (LS2) of the LHC in 2018/19. It will replace the present silicon tracker with seven layers of Monolithic Active Pixel Sensors (MAPS) and significantly improve the detector performance in terms of tracking and rate capabilities. The choice of technology has been guided by the tight requirements on the material budget of 0 : 3 % X = X 0 /layer for the three innermost layers and backed by the significant progress in the field of MAPS in recent years. The pixel chips are manufactured in the TowerJazz 180 nm CMOS imaging sensor process on wafers with a high resistivity epitaxial layer. Within the ongoing R&D; phase, several sensor chip prototypes have been developed and produced on different epitaxial layer thicknesses and resistivities. These chips are being characterized for their performance before and after irradiation using source tests, test beam and measu...

  7. A CMOS pixel sensor prototype for the outer layers of linear collider vertex detector

    Science.gov (United States)

    Zhang, L.; Morel, F.; Hu-Guo, C.; Himmi, A.; Dorokhov, A.; Hu, Y.

    2015-01-01

    The International Linear Collider (ILC) expresses a stringent requirement for high precision vertex detectors (VXD). CMOS pixel sensors (CPS) have been considered as an option for the VXD of the International Large Detector (ILD), one of the detector concepts proposed for the ILC. MIMOSA-31 developed at IPHC-Strasbourg is the first CPS integrated with 4-bit column-level ADC for the outer layers of the VXD, adapted to an original concept minimizing the power consumption. It is composed of a matrix of 64 rows and 48 columns. The pixel concept combines in-pixel amplification with a correlated double sampling (CDS) operation in order to reduce the temporal noise and fixed pattern noise (FPN). At the bottom of the pixel array, each column is terminated with a self-triggered analog-to-digital converter (ADC). The ADC design was optimized for power saving at a sampling frequency of 6.25 MS/s. The prototype chip is fabricated in a 0.35 μm CMOS technology. This paper presents the details of the prototype chip and its test results.

  8. IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

    Science.gov (United States)

    Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

    2017-06-19

    We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

  9. The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

    Directory of Open Access Journals (Sweden)

    Gerhard Lutz

    2016-04-01

    Full Text Available Depleted field effect transistors (DEPFET are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR DEPFET is an ideal central element for an active pixel sensor (APS pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell.

  10. Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

    CERN Document Server

    Grinstein, S; Boscardin, M; Christophersen, M; Da Via, C; Betta, G -F Dalla; Darbo, G; Fadeyev, V; Fleta, C; Gemme, C; Grenier, P; Jimenez, A; Lopez, I; Micelli, A; Nelist, C; Parker, S; Pellegrini, G; Phlips, B; Pohl, D L; Sadrozinski, H F -W; Sicho, P; Tsiskaridze, S

    2013-01-01

    Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

  11. Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

    Energy Technology Data Exchange (ETDEWEB)

    Asano, M.; Sekigawa, D. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Hara, K., E-mail: hara@hep.px.tsukuba.ac.jp [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Center for Integrated Research in Fundamental Science and Engineering, University of Tsukuba, Tsukuba, Ibaraki 305-8571 (Japan); Aoyagi, W.; Honda, S.; Tobita, N. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Arai, Y.; Miyoshi, T.; Kurachi, I.; Tsuboyama, T.; Yamada, M. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2016-09-21

    We are developing monolithic pixel sensors based on a 0.2 μm fully depleted silicon-on-insulator (FD-SOI) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (SOI2 layer). Applying a negative voltage to the SOI2 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by {sup 60}Co γ and other characteristics of the integration-type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC.

  12. Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

    Science.gov (United States)

    Hiti, B.; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

    2017-10-01

    Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1× 1016 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5× 1014 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.

  13. Filter-free image sensor pixels comprising silicon nanowires with selective color absorption.

    Science.gov (United States)

    Park, Hyunsung; Dan, Yaping; Seo, Kwanyong; Yu, Young J; Duane, Peter K; Wober, Munib; Crozier, Kenneth B

    2014-01-01

    The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency.

  14. Characterisation of n-in-p pixel sensors for high radiation environments

    CERN Document Server

    Tsurin, I; Allport, P.P; Casse, G; Chmill, V; Huse, T; Wormald, M

    2011-01-01

    This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7 10^15 and 1.5 10^16 protons/cm^2 . A comparison is given for two measurement techniques; one based on the FE-I3 readout chip designed for the ATLAS and the other using the Beetle chip developed for the LHCb experiments at CERN.

  15. A review of design considerations for the sensor matrix in semiconductor pixel detectors for tracking in particle physics experiments

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Sally E-mail: seidel@glueball.phys.unm.edu

    2001-06-11

    Methods have been developed to improve the reliability of silicon sensors, in particular for pixel detectors, and their resistance to radiation damage, as it is encountered in tracking detectors in particle physics experiments. The choice of wafer material, the processing techniques, and the sensor layout are discussed. Alternative semiconductor substrates and variations on the planar hybrid design are mentioned.

  16. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

    CERN Document Server

    Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

    2004-01-01

    Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

  17. Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bergauer, T.; Brondolin, E. [Institut fuer Hochenergiephysik, Vienna (Austria); and others

    2017-08-15

    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Φ{sub eq} = 2 x 10{sup 16} cm{sup -2}, and an ionising dose of ∼5 MGy after an integrated luminosity of 3000 fb{sup -1}. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 μm thick p-bulk pad diodes and strip sensors irradiated up to fluences of Φ{sub eq} = 1.3 x 10{sup 16} cm{sup -2} are shown. (orig.)

  18. Real-time distributed video coding for 1K-pixel visual sensor networks

    Science.gov (United States)

    Hanca, Jan; Deligiannis, Nikos; Munteanu, Adrian

    2016-07-01

    Many applications in visual sensor networks (VSNs) demand the low-cost wireless transmission of video data. In this context, distributed video coding (DVC) has proven its potential to achieve state-of-the-art compression performance while maintaining low computational complexity of the encoder. Despite their proven capabilities, current DVC solutions overlook hardware constraints, and this renders them unsuitable for practical implementations. This paper introduces a DVC architecture that offers highly efficient wireless communication in real-world VSNs. The design takes into account the severe computational and memory constraints imposed by practical implementations on low-resolution visual sensors. We study performance-complexity trade-offs for feedback-channel removal, propose learning-based techniques for rate allocation, and investigate various simplifications of side information generation yielding real-time decoding. The proposed system is evaluated against H.264/AVC intra, Motion-JPEG, and our previously designed DVC prototype for low-resolution visual sensors. Extensive experimental results on various data show significant improvements in multiple configurations. The proposed encoder achieves real-time performance on a 1k-pixel visual sensor mote. Real-time decoding is performed on a Raspberry Pi single-board computer or a low-end notebook PC. To the best of our knowledge, the proposed codec is the first practical DVC deployment on low-resolution VSNs.

  19. Monolithic Active Pixel Matrix with Binary Counters (MAMBO) ASIC

    Energy Technology Data Exchange (ETDEWEB)

    Khalid, Farah F.; Deptuch, Grzegorz; Shenai, Alpana; Yarema, Raymond J.; /Fermilab

    2010-11-01

    Monolithic Active Matrix with Binary Counters (MAMBO) is a counting ASIC designed for detecting and measuring low energy X-rays from 6-12 keV. Each pixel contains analogue functionality implemented with a charge preamplifier, CR-RC{sup 2} shaper and a baseline restorer. It also contains a window comparator which can be trimmed by 4 bit DACs to remove systematic offsets. The hits are registered by a 12 bit ripple counter which is reconfigured as a shift register to serially output the data from the entire ASIC. Each pixel can be tested individually. Two diverse approaches have been used to prevent coupling between the detector and electronics in MAMBO III and MAMBO IV. MAMBO III is a 3D ASIC, the bottom ASIC consists of diodes which are connected to the top ASIC using {mu}-bump bonds. The detector is decoupled from the electronics by physically separating them on two tiers and using several metal layers as a shield. MAMBO IV is a monolithic structure which uses a nested well approach to isolate the detector from the electronics. The ASICs are being fabricated using the SOI 0.2 {micro}m OKI process, MAMBO III is 3D bonded at T-Micro and MAMBO IV nested well structure was developed in collaboration between OKI and Fermilab.

  20. Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

    CERN Document Server

    Andricek, L; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Terzo, S.; Weigell, P.

    2014-01-01

    The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tunability, charge collection, cluster sizes and hit efficiencies. Targeting at ...

  1. Performance of new radiation tolerant thin n-in-p Silicon pixel sensors for the CMS experiment at High Luminosity LHC

    CERN Document Server

    Dalla Betta, G.F; Darbo, G; Dinardo, Mauro; Giacomini, G; Menasce, Dario; Meschini, Marco; Messineo, Alberto; Moroni, Luigi; Rivera, Ryan Allen; Ronchin, S; Uplegger, Lorenzo; Viliani, Lorenzo; Zoi, Irene; Zuolo, Davide

    2017-01-01

    The High Luminosity upgrade of the CERN-LHC (HL-LHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10$^{16}$ particles/cm$^2$ at $\\sim$3 cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity in collaboration with Fondazione Bruno Kessler-FBK, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R and D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100~$\\mu {\\rm m}$ and 130~$\\mu {\\rm m}$ active thickness for planars, and 130~$\\mu {\\rm m}$ for 3D sensors, the thinnest ones ever produced so far. First prototypes of hybrid modules bump-bonded to the present CMS readout chip have been tested in beam tests. Preliminary results on their performance before and after irradiation are presented.

  2. Monolithic active pixel radiation detector with shielding techniques

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, Grzegorz W.

    2016-09-06

    A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

  3. A measurement of Lorentz angle and spatial resolution of radiation hard silicon pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Gorelov, I.; Gorfine, G.; Hoeferkamp, M.; Seidel, S.C.; Ciocio, A.; Einsweiler, K.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Marchesini, R.; Milgrome, O.; Palaio, N.; Pengg, F.; Richardson, J.; Zizka, G.; Ackers, M.; Fischer, P.; Keil, M.; Meuser, S.; Stockmanns, T.; Treis, J.; Wermes, N.; Goessling, C.; Huegging, F.; Wuestenfeld, J.; Wunstorf, R.; Barberis, D.; Beccherle, R.; Cervetto, M.; Darbo, G.; Gagliardi, G.; Gemme, C.; Morettini, P.; Netchaeva, P.; Osculati, B.; Parodi, F.; Rossi, L.; Dao, K.; Fasching, D.; Blanquart, L.; Breugnon, P.; Calvet, D.; Clemens, J.-C.; Delpierre, P.; Hallewell, G.; Laugier, D.; Mouthuy, T.; Rozanov, A.; Trouilleau, C.; Valin, I.; Aleppo, M.; Andreazza, A.; Caccia, M.; Lari, T.; Meroni, C.; Ragusa, F.; Troncon, C. E-mail: clara.troncon@mi.infn.itclara.troncon@cern.ch; Vegni, G.; Rohe, T.; Boyd, G.R.; Severini, H.; Skubic, P.L.; Snow, J.; Sicho, P.; Tomasek, L.; Vrba, V.; Holder, M.; Lipka, D.; Ziolkowski, M.; Cauz, D.; D' Auria, S.; Del Papa, C.; Grassman, H.; Santi, L.; Becks, K.H.; Gerlach, P.; Grah, C.; Gregor, I.; Harenberg, T.; Linder, C

    2002-04-01

    Silicon pixel sensors developed by the ATLAS collaboration to meet LHC requirements and to withstand hadronic irradiation to fluences of up to 10{sup 15} n{sub eq}/cm{sup 2} have been evaluated using a test beam facility at CERN providing a magnetic field. The Lorentz angle was measured and found to alter from 9.0 deg. before irradiation, when the detectors operated at 150 V bias at B=1.48 T, to 3.1 deg. after irradiation and operating at 600 V bias at 1.01 T. In addition to the effect due to magnetic field variation, this change is explained by the variation of the electric field inside the detectors arising from the different bias conditions. The depletion depths of irradiated sensors at various bias voltages were also measured. At 600 V bias 280 {mu}m thick sensors depleted to {approx}200 {mu}m after irradiation at the design fluence of 1x10{sup 15} 1 MeV n{sub eq}/cm{sup 2} and were almost fully depleted at a fluence of 0.5x10{sup 15} 1 MeV n{sub eq}/cm{sup 2}. The spatial resolution was measured for angles of incidence between 0 deg. and 30 deg. The optimal value was found to be better than 5.3 {mu}m before irradiation and 7.4 {mu}m after irradiation.

  4. Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

    CERN Document Server

    Swartz, M.; Allkofer, Y.; Bortoletto, D.; Cremaldi, L.; Cucciarelli, S.; Dorokhov, A.; Hoermann, C.; Kim, D.; Konecki, M.; Kotlinski, D.; Prokofiev, Kirill; Regenfus, Christian; Rohe, T.; Sanders, D.A.; Son, S.; Speer, T.

    2006-01-01

    We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.

  5. Design and Optimization of Multi-Pixel Transition-Edge Sensors for X-Ray Astronomy Applications

    Science.gov (United States)

    Smith, Stephen J.; Adams, Joseph S.; Bandler, Simon R.; Chervenak, James A.; Datesman, Aaron Michael; Eckart, Megan E.; Ewin, Audrey J.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; hide

    2017-01-01

    Multi-pixel transition-edge sensors (TESs), commonly referred to as 'hydras', are a type of position sensitive micro-calorimeter that enables very large format arrays to be designed without commensurate increase in the number of readout channels and associated wiring. In the hydra design, a single TES is coupled to discrete absorbers via varied thermal links. The links act as low pass thermal filters that are tuned to give a different characteristic pulse shape for x-ray photons absorbed in each of the hydra sub pixels. In this contribution we report on the experimental results from hydras consisting of up to 20 pixels per TES. We discuss the design trade-offs between energy resolution, position discrimination and number of pixels and investigate future design optimizations specifically targeted at meeting the readout technology considered for Lynx.

  6. Status of the ATLAS pixel detector

    CERN Document Server

    Saavedra Aldo, F

    2005-01-01

    The ATLAS pixel detector is currently being constructed and will be installed in 2006 to be ready for commissioning at the Large Hadron Collider. The complete pixel detector is composed of three concentric barrels and six disks that are populated by 1744 ATLAS Pixel modules. The main components of the pixel module are the readout electronics and the silicon sensor whose active region is instrumented with rectangular pixels. The module has been designed to be able to survive 10 years of operation within the ATLAS detector. A brief description of the pixel detector will be presented with results and problems encountered during the production stage.

  7. Actively addressed single pixel full-colour plasmonic display

    Science.gov (United States)

    Franklin, Daniel; Frank, Russell; Wu, Shin-Tson; Chanda, Debashis

    2017-05-01

    Dynamic, colour-changing surfaces have many applications including displays, wearables and active camouflage. Plasmonic nanostructures can fill this role by having the advantages of ultra-small pixels, high reflectivity and post-fabrication tuning through control of the surrounding media. However, previous reports of post-fabrication tuning have yet to cover a full red-green-blue (RGB) colour basis set with a single nanostructure of singular dimensions. Here, we report a method which greatly advances this tuning and demonstrates a liquid crystal-plasmonic system that covers the full RGB colour basis set, only as a function of voltage. This is accomplished through a surface morphology-induced, polarization-dependent plasmonic resonance and a combination of bulk and surface liquid crystal effects that manifest at different voltages. We further demonstrate the system's compatibility with existing LCD technology by integrating it with a commercially available thin-film-transistor array. The imprinted surface interfaces readily with computers to display images as well as video.

  8. Actively addressed single pixel full-colour plasmonic display

    Science.gov (United States)

    Franklin, Daniel; Frank, Russell; Wu, Shin-Tson; Chanda, Debashis

    2017-01-01

    Dynamic, colour-changing surfaces have many applications including displays, wearables and active camouflage. Plasmonic nanostructures can fill this role by having the advantages of ultra-small pixels, high reflectivity and post-fabrication tuning through control of the surrounding media. However, previous reports of post-fabrication tuning have yet to cover a full red-green-blue (RGB) colour basis set with a single nanostructure of singular dimensions. Here, we report a method which greatly advances this tuning and demonstrates a liquid crystal-plasmonic system that covers the full RGB colour basis set, only as a function of voltage. This is accomplished through a surface morphology-induced, polarization-dependent plasmonic resonance and a combination of bulk and surface liquid crystal effects that manifest at different voltages. We further demonstrate the system's compatibility with existing LCD technology by integrating it with a commercially available thin-film-transistor array. The imprinted surface interfaces readily with computers to display images as well as video. PMID:28488671

  9. First functionality tests of a 64 × 64 pixel DSSC sensor module connected to the complete ladder readout

    Science.gov (United States)

    Donato, M.; Hansen, K.; Kalavakuru, P.; Kirchgessner, M.; Kuster, M.; Porro, M.; Reckleben, C.; Turcato, M.

    2017-03-01

    The European X-ray Free Electron Laser (XFEL.EU) will provide every 0.1 s a train of 2700 spatially coherent ultrashort X-ray pulses at 4.5 MHz repetition rate. The Small Quantum Systems (SQS) instrument and the Spectroscopy and Coherent Scattering instrument (SCS) operate with soft X-rays between 0.5 keV-6 keV. The DEPFET Sensor with Signal Compression (DSSC) detector is being developed to meet the requirements set by these two XFEL.EU instruments. The DSSC imager is a 1 mega-pixel camera able to store up to 800 single-pulse images per train. The so-called ladder is the basic unit of the DSSC detector. It is the single unit out of sixteen identical-units composing the DSSC-megapixel camera, containing all representative electronic components of the full-size system and allows testing the full electronic chain. Each DSSC ladder has a focal plane sensor with 128× 512 pixels. The read-out ASIC provides full-parallel readout of the sensor pixels. Every read-out channel contains an amplifier and an analog filter, an up-to 9 bit ADC and the digital memory. The ASIC amplifier have a double front-end to allow one to use either DEPFET sensors or Mini-SDD sensors. In the first case, the signal compression is a characteristic intrinsic of the sensor; in the second case, the compression is implemented at the first amplification stage. The goal of signal compression is to meet the requirement of single-photon detection capability and wide dynamic range. We present the first results of measurements obtained using a 64× 64 pixel DEPFET sensor attached to the full final electronic and data-acquisition chain.

  10. Depth-of-interaction estimates in pixelated scintillator sensors using Monte Carlo techniques

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Diksha [Division of Imaging, Diagnostics and Software Reliability, Center for Devices and Radiological Health, Food and Drug Administration, 10903 New Hampshire Ave, Silver Spring, MD 20993 (United States); Sze, Christina; Bhandari, Harish; Nagarkar, Vivek [Radiation Monitoring Devices Inc., Watertown, MA (United States); Badano, Aldo, E-mail: aldo.badano@fda.hhs.gov [Division of Imaging, Diagnostics and Software Reliability, Center for Devices and Radiological Health, Food and Drug Administration, 10903 New Hampshire Ave, Silver Spring, MD 20993 (United States)

    2017-01-01

    Image quality in thick scintillator detectors can be improved by minimizing parallax errors through depth-of-interaction (DOI) estimation. A novel sensor for low-energy single photon imaging having a thick, transparent, crystalline pixelated micro-columnar CsI:Tl scintillator structure has been described, with possible future application in small-animal single photon emission computed tomography (SPECT) imaging when using thicker structures under development. In order to understand the fundamental limits of this new structure, we introduce cartesianDETECT2, an open-source optical transport package that uses Monte Carlo methods to obtain estimates of DOI for improving spatial resolution of nuclear imaging applications. Optical photon paths are calculated as a function of varying simulation parameters such as columnar surface roughness, bulk, and top-surface absorption. We use scanning electron microscope images to estimate appropriate surface roughness coefficients. Simulation results are analyzed to model and establish patterns between DOI and photon scattering. The effect of varying starting locations of optical photons on the spatial response is studied. Bulk and top-surface absorption fractions were varied to investigate their effect on spatial response as a function of DOI. We investigated the accuracy of our DOI estimation model for a particular screen with various training and testing sets, and for all cases the percent error between the estimated and actual DOI over the majority of the detector thickness was ±5% with a maximum error of up to ±10% at deeper DOIs. In addition, we found that cartesianDETECT2 is computationally five times more efficient than MANTIS. Findings indicate that DOI estimates can be extracted from a double-Gaussian model of the detector response. We observed that our model predicts DOI in pixelated scintillator detectors reasonably well.

  11. Characterization of the column-based priority logic readout of Topmetal-II- CMOS pixel direct charge sensor

    Science.gov (United States)

    An, M.; Zhang, W.; Xiao, L.; Gao, C.; Chen, C.; Han, M.; Huang, G.; Ji, R.; Li, X.; Liu, J.; Mei, Y.; Pei, H.; Sun, Q.; Sun, X.; Wang, K.; Yang, P.; Zhou, W.

    2017-03-01

    We present the detailed study of the digital readout of Topmetal-II- CMOS pixel direct charge sensor. Topmetal-II- is an integrated sensor with an array of 72×72 pixels each capable of directly collecting external charge through exposed metal electrodes in the topmost metal layer. In addition to the time-shared multiplexing readout of the analog output from Charge Sensitive Amplifiers in each pixel, hits are also generated through comparators in each pixel with individually adjustable thresholds. The hits are read out via a column-based priority logic structure, retaining both hit location and time information. The in-array column-based priority logic features with a full clock-less circuitry hence there is no continuously running clock distributed in the pixel and matrix logic. These characteristics enable its use as the charge readout device in future Time Projection Chambers without gaseous gain mechanism, which has unique advantages in low background and low rate-density experiments. We studied the detailed working behavior and performance of this readout, and demonstrated its functional validity and potential in imaging applications.

  12. Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering.

    Science.gov (United States)

    Mars, Kamel; Lioe, De Xing; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

    2017-11-09

    Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

  13. Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering

    Directory of Open Access Journals (Sweden)

    Kamel Mars

    2017-11-01

    Full Text Available Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

  14. Architecture and characterization of the P4DI CMOS hybrid pixel sensor

    Science.gov (United States)

    Chatzistratis, D.; Theodoratos, G.; Kazas, I.; Zervakis, E.; Loukas, D.; Lambropoulos, C. P.

    2017-09-01

    Gamma ray imaging can be used for the extraction either of the activity map of a source or of the attenuation map of an object or both, as well as for the identification of the material composition of the emitting source or the object. All these imaging modalities can benefit from instruments giving the information of the energy of the converted photons and also the spatial and time coordinates of the conversion. The P4DI CMOS and hybrid provides the core technology for this task being a 2-D array based on Cd(Zn)Te material for the sensing layer. It consists of 1250 pixels with 400 μ m pitch. The energy resolution of the 241Am photopeak is 3.5 keV, time resolution is less than 12 μ s and power consumption is less than 100 mW. Architecture and characterization are described.

  15. Test beam evaluation of newly developed n-in-p planar pixel sensors for use in a high radiation environment

    Energy Technology Data Exchange (ETDEWEB)

    Kimura, K., E-mail: kimihiko@hep.phys.titech.ac.jp [Institute of Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Yamaguchi, D.; Motohashi, K. [Institute of Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Nakamura, K.; Unno, Y. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Jinnouchi, O. [Institute of Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8551 (Japan); Altenheiner, S. [Experimentelle Physik IV, Technische Universität Dortmund, 44221 Dortmund (Germany); Blue, A. [School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (United Kingdom); Bomben, M. [CNRS/IN2P3 (France); Laboratoire de physique nucléaire et de hautes energies (LPNHE), Univ. Paris-UMPC, 4 Place Jussieu, 75005 Paris (France); Univ. Paris Diderot (France); Butter, A. [LAL, University Paris-Sud (France); CNRS/IN2P3 (France); Université Paris-Saclay, Orsay (France); Cervelli, A. [Universität Bern, Laboratory for High Energy Physics, Sidlerstrasse 55, CH-3012 Bern (Switzerland); Crawley, S. [School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, Scotland (United Kingdom); Ducourthial, A. [CNRS/IN2P3 (France); Laboratoire de physique nucléaire et de hautes energies (LPNHE), Univ. Paris-UMPC, 4 Place Jussieu, 75005 Paris (France); Univ. Paris Diderot (France); Gisen, A. [Experimentelle Physik IV, Technische Universität Dortmund, 44221 Dortmund (Germany); Hagihara, M. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); and others

    2016-09-21

    Radiation-tolerant n-in-p planar pixel sensors have been under development in cooperation with Hamamatsu Photonics K.K. (HPK). This is geared towards applications in high-radiation environments, such as for the future Inner Tracker (ITk) placed in the innermost part of the ATLAS detector in the high luminosity LHC (HL-LHC) experiment. Prototypes of those sensors have been produced, irradiated, and evaluated over the last few years. In the previous studies, it was reported that significant drops in the detection efficiency were observed after irradiation, especially under bias structures. The bias structures are made up of poly-Si or Al bias rails and poly-Si bias resistors. The structure is implemented on the sensors to allow quality checks to be performed before the bump-bonding process, and to ensure that charge generated in floating pixels due to non-contacting or missing bump-bonds is dumped in a controlled way in order to avoid noise. To minimize the efficiency drop, several new pixel structures have been designed with bias rails and bias resistors relocated. Several test beams have been carried out to evaluate the drops in the detection efficiency of the new sensor structures after irradiation. Newly developed sensor modules were irradiated with proton-beams at the Cyclotron and Radio-Isotope Center (CYRIC) in Tohoku University to see the effect of sensor-bulk damage and surface charge-up. An irradiation with γ-rays was also carried out at Takasaki Advanced Radiation Research Center, with the goal of decoupling the effect of surface charge-up from that of bulk damage. Those irradiated sensors have been evaluated with particle beams at DESY and CERN. Comparison between different sensor structures confirmed significant improvements in minimizing efficiency loss under the bias structures after irradiation. The results from γ-irradiation also enabled cross-checking the results of a semiconductor technology simulation program (TCAD). - Highlights: • The

  16. Design and Characterisation of a Fast Architecture Providing Zero Suppressed Digital Output Integrated in a High Resolution CMOS Pixel Sensor for the STAR Vertex Detector and the EUDET Beam Telescope

    CERN Document Server

    Hu-guo, C

    2008-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) have demonstrated their strong potential for tracking devices, particularly for flavour tagging. They are foreseen to equip several vertex detectors and beam telescopes. Most applications require high read-out speed, imposing sensors to feature digital output with integrated zero suppression. The most recent development of MAPS at IPHC and IRFU addressing this issue will be reviewed. An architecture will be presented, combining a pixel array, column-level discriminators and zero suppression circuits. Each pixel features a preamplifier and a correlated double sampling (CDS) micro-circuit reducing the temporal and fixed pattern noises. The sensor is fully programmable and can be monitored. It will equip experimental apparatus starting data taking in 2009/2010.

  17. Studies Of Radiation Effects On Pixel Sensors For The Cms Experiment And Design Of Radiation Hard Sensors For Future Upgrades Of Lhc Upgrade

    CERN Document Server

    Roy, A

    2005-01-01

    The CMS experiment which is currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will contain a pixel detector that provides in its final configuration three space points per track close to the interaction point of the colliding beams. The readout chip is expected to survive a particle fluence of 6 × 1014 neq/cm2 and therefore all components of the hybrid pixel detector have to perform well up to at least this fluence. This requires the silicon to operate partially depleted after irradiation and therefore “n in n” concept has been chosen. In order to perform IV tests on wafers to certify the quality of sensors and to hold accidentally unconnected pixels close to ground potential a resistive path between the pixels has been implemented by openings in the p -stop implants surrounding every pixel cell. Prototypes of such sensors have been produced by two different companies and their properties have been extensively tested before and after ir...

  18. Evaluation of KEK n-in-p planar pixel sensor structures for very high radiation environments with testbeam

    Energy Technology Data Exchange (ETDEWEB)

    Motohashi, K., E-mail: kazuki.motohashi@cern.ch [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Department of Physics, Ochanomizu University, 2-1-1 Ootsuka Bunkyo-ku, Tokyo 120-0021 (Japan); Kubota, T. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Nakamura, K.; Hori, R. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Gallrapp, C. [European Organization for Nuclear Research, CERN CH-1211, Genève 23 (Switzerland); Unno, Y. [Institute of Particle and Nuclear Study, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Jinnouchi, O. [Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550 (Japan); Altenheiner, S. [Technische Universität Dortmund, Experimentelle Physik IV, 44221 Dortmund (Germany); Arai, Y. [Department of Physics, Osaka University, Machikaneyama-cho, Toyonaka-shi, Osaka 560-0043 (Japan); Hagihara, M. [Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba-shi, Ibaraki 305-8571 (Japan); Backhaus, M. [University of Bonn, Physikalisches Institut, Nussallee 12, D-53115 Bonn (Germany); Bomben, M. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Barre 12-22, 1er étage - 4 place Jussieu - 75252 Paris Cedex 05 (France); Forshaw, D. [Department of Physics, The University of Liverpool, L69 7ZE Liverpool (United Kingdom); George, M. [II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); and others

    2014-11-21

    Various structures for n-in-p planar pixel sensors have been developed at KEK in order to cope with the huge particle fluence in the upcoming LHC upgrades. Performances of the sensors with different structures have been evaluated with testbeam. The n-in-p devices were connected by bump-bonding to the ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 1×10{sup 16} 1 MeV n{sub eq}/cm{sup 2}. Results of measurements with 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) in September 2012 are presented. - Highlights: • Pixel sensors with two biasing and two isolation structures were evaluated. • Overall hit efficiency of 97.6% was confirmed at −1200 V after 1×10{sup 16}n{sub eq}/cm{sup 2}. • Inefficiency regions were observed in non-irradiated samples with P-spray isolation. • Inefficiency regions after high irradiation were observed under bias rail and PolySi. • The potential of the surface structure is thought to affect the charge collection.

  19. Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam

    Science.gov (United States)

    Fröjdh, Erik; Fröjdh, C.; Gimenez, E. N.; Krapohl, D.; Maneuski, D.; Norlin, B.; O'Shea, V.; Wilhelm, H.; Tartoni, N.; Thungström, G.; Zain, R. M.

    2013-08-01

    High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55 μm and 110 μm) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-threshold mode. The time-over-threshold mode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme Conditions Beamline I15 at Diamond Light Source.

  20. Energy-recycling pixel for active-matrix organic light-emitting diode display

    Science.gov (United States)

    Yang, Che-Yu; Cho, Ting-Yi; Chen, Yen-Yu; Yang, Chih-Jen; Meng, Chao-Yu; Yang, Chieh-Hung; Yang, Po-Chuan; Chang, Hsu-Yu; Hsueh, Chun-Yuan; Wu, Chung-Chih; Lee, Si-Chen

    2007-06-01

    The authors report a pixel structure for active-matrix organic light-emitting diode (OLED) displays that has a hydrogenated amorphous silicon solar cell inserted between the driving polycrystalline Si thin-film transistor and the pixel OLED. Such an active-matrix OLED pixel structure not only exhibits a reduced reflection (and thus improved contrast) compared to conventional OLEDs but also is capable of recycling both incident photon energies and internally generated OLED radiation. Such a feature of energy recycling may be of use for portable/mobile electronics, which are particularly power aware.

  1. Weighted Local Active Pixel Pattern (WLAPP for Face Recognition in Parallel Computation Environment

    Directory of Open Access Journals (Sweden)

    Gundavarapu Mallikarjuna Rao

    2013-10-01

    Full Text Available Abstract  - The availability of multi-core technology resulted totally new computational era. Researchers are keen to explore available potential in state of art-machines for breaking the bearer imposed by serial computation. Face Recognition is one of the challenging applications on so ever computational environment. The main difficulty of traditional Face Recognition algorithms is lack of the scalability. In this paper Weighted Local Active Pixel Pattern (WLAPP, a new scalable Face Recognition Algorithm suitable for parallel environment is proposed.  Local Active Pixel Pattern (LAPP is found to be simple and computational inexpensive compare to Local Binary Patterns (LBP. WLAPP is developed based on concept of LAPP. The experimentation is performed on FG-Net Aging Database with deliberately introduced 20% distortion and the results are encouraging. Keywords — Active pixels, Face Recognition, Local Binary Pattern (LBP, Local Active Pixel Pattern (LAPP, Pattern computing, parallel workers, template, weight computation.  

  2. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo

    2013-06-15

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO{sub 2} interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO{sub 2} to the Si-SiO{sub 2} interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An

  3. Full simulation of a testbeam experiment including modeling of the Bonn Atlas Telescope and Atlas 3D pixel silicon sensors

    CERN Document Server

    Sjøbæk, Kyrre Ness; Rohne, O M; Bolle, E

    2010-01-01

    3D silicon pixel sensors are a strong candidate for the sensor component of a new B-layer in the ATLAS detector, and for the ATLAS sLHC tracker, as these sensors can be highly radiation hard, fast, and sensitive to the edge. In order to characterize the sensors before large-scale application, samples are mounted in small fixed-target testbeam experiments. Here the samples are exposed to high-energy charged hadrons, and the response to this radiation is measured. The hit position in the sensor is estimated using a beam telescope, which measures the position of the particle while in flight up- and downstream of the sample. The hit position is then estimated by assuming that particle flies in a straight line between the telescope measurements and the sample. This thesis presents a full Geant4 simulation of the interaction between the beam particles and the material in the testbeam, including but not limited to sensors. The output from the simulation is then used for detailed modeling of the signal formation and ...

  4. CMOS active pixel sensor type imaging system on a chip

    Science.gov (United States)

    Fossum, Eric R. (Inventor); Nixon, Robert (Inventor)

    2011-01-01

    A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.

  5. CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detector based on CMOS pixel techology. Such detectors provide charge collection, analog and digital amplification in the same silicon bulk. The radiation hardness is obtained with multiple nested wells that have embedded the CMOS electronics with sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC. A number of alternative solutions have been explored and characterised, and are presented in this document.

  6. arXiv Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

    CERN Document Server

    INSPIRE-00541780; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

    2017-10-25

    Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The r...

  7. Efficiency enhancement in a backside illuminated 1.12 μm pixel CMOS image sensor via parabolic color filters.

    Science.gov (United States)

    Lee, Jong-Kwon; Kim, Ahreum; Kang, Dong-Wan; Lee, Byung Yang

    2016-07-11

    The shrinkage of pixel size down to sub-2 μm in high-resolution CMOS image sensors (CISs) results in degraded efficiency and increased crosstalk. The backside illumination technology can increase the efficiency, but the crosstalk still remains an critical issue to improve the image quality of the CIS devices. In this paper, by adopting a parabolic color filter (P-CF), we demonstrate efficiency enhancement without any noticeable change in optical crosstalk of a backside illuminated 1.12 μm pixel CIS with deep-trench-isolation structure. To identify the observed results, we have investigated the effect of radius of curvature (r) of the P-CF on the efficiency and optical crosstalk of the CIS by performing an electromagnetic analysis. As the r of P-CF becomes equal to (or half) that of the microlens, the efficiencies of the B-, G-, and R-pixels increase by a factor of 14.1% (20.3%), 9.8% (15.3%), and 15.0% (15.7%) with respect to the flat CF cases without any noticeable crosstalk change. Also, as the incident angle increases up to 30°, the angular dependence of the efficiency and crosstalk significantly decreases by utilizing the P-CF in the CIS. Meanwhile, further reduction of r severely increases the optical crosstalk due to the increased diffraction effect, which has been confirmed with the simulated electric-field intensity distribution inside the devices.

  8. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Calderini, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Dipartimento di Fisica E. Fermi, Universitá di Pisa, Pisa (Italy); Bagolini, A. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bomben, M. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); Bosisio, L. [Università degli studi di Trieste and INFN-Trieste (Italy); Chauveau, J. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy); La Rosa, A. [Section de Physique (DPNC), Universitè de Geneve, Geneve (Switzerland); Marchiori, G. [Laboratoire de Physique Nucléaire et des Hautes Energies (LPNHE), Paris (France); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Povo di Trento (Italy)

    2014-11-21

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R and D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  9. Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

    CERN Document Server

    Calderini, G; Bomben, M; Boscardin, M; Bosisio, L; Chauveau, J; Giacomini, G; La Rosa, A; Marchiori, G; Zorzi, N

    2014-01-01

    In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.

  10. Quasi-pixel structured nanocrystalline Gd2O3(Eu) scintillation screens and imaging performance for indirect X-ray imaging sensors

    Science.gov (United States)

    Cha, Bo Kyung; Kim, Jong Yul; Cho, Gyuseong; Seo, Chang-Woo; Jeon, Sungchae; Huh, Young

    2011-08-01

    A novel quasi-pixel structured scintillation screen with nanocrystalline Gd2O3:Eu particle sizes was introduced for indirect X-ray imaging sensors with high sensitivity and high spatial resolution. A nanocrystalline Gd2O3:Eu scintillating phosphor with average 100 nm sizes was used as a conversion material for incident X-rays into optical photons. In this work, silicon-based pixel structures with different 100 and 50 μm pixel sizes, 10 μm wall width and 120 μm thickness were fabricated by a standard photolithography and deep reactive ion etching (DRIE) process. The pixelated scintillation screen was fabricated by filling the synthesized nanocrystalline Gd2O3:Eu scintillating phosphor into pixel-structured silicon arrays, and X-ray imaging performance such as relative light intensity, X-ray to light response and spatial resolution in terms of modulation transfer function (MTF) of the fabricated samples were measured. Although high spatial resolution imaging was largely achieved by pixel-structured nanocrystalline Gd2O3:Eu scintillation screens, X-ray sensitivity was still low for medical imaging applications. As a result, novel quasi-pixel structured screens with additional thin Gd2O2S:Tb scintillating layer were proposed for X-ray imaging detector with suitable sensitivity and spatial resolution in comparison with pixel-structured screens, and X-ray imaging performance of quasi-pixel structured nanocrystalline Gd2O3:Eu scintillating screens was investigated.

  11. The ALICE Silicon Pixel Detector System (SPD)

    CERN Document Server

    Kluge, A; Antinori, Federico; Burns, M; Cali, I A; Campbell, M; Caselle, M; Ceresa, S; Dima, R; Elias, D; Fabris, D; Krivda, Marian; Librizzi, F; Manzari, Vito; Morel, M; Moretto, Sandra; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato De Matos, C; Turrisi, R; Tydesjo, H; Viesti, G; PH-EP

    2007-01-01

    The ALICE silicon pixel detector (SPD) comprises the two innermost layers of the ALICE inner tracker system. The SPD includes 120 detector modules (half-staves) each consisting of 10 ALICE pixel chips bump bonded to two silicon sensors and one multi-chip read-out module. Each pixel chip contains 8192 active cells, so that the total number of pixel cells in the SPD is ≈ 107. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The constraints on material budget and detector module dimensions are very demanding.

  12. Probing active-edge silicon sensors using a high precision telescope

    Energy Technology Data Exchange (ETDEWEB)

    Akiba, K. [Federal University of Rio de Janeiro, Rio de Janeiro (Brazil); Artuso, M. [Syracuse University, Syracuse, NY (United States); Beveren, V. van; Beuzekom, M. van; Boterenbrood, H. [Nikhef, Amsterdam (Netherlands); Buytaert, J.; Collins, P.; Dumps, R. [CERN, the European Organisation for Nuclear Research, Geneva (Switzerland); Heijden, B. van der [Nikhef, Amsterdam (Netherlands); Hombach, C. [University of Manchester, Manchester, Lancashire (United Kingdom); Hynds, D. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Hsu, D. [Syracuse University, Syracuse, NY (United States); John, M. [University of Oxford, Oxfordshire (United Kingdom); Koffeman, E. [Nikhef, Amsterdam (Netherlands); Leflat, A. [Lomonosov Moscow State University, Moscow (Russian Federation); Li, Y. [Tsinghua University, Beijing (China); Longstaff, I.; Morton, A. [Glasgow University, Glasgow, Lanarkshire (United Kingdom); Pérez Trigo, E. [Universidade de Santiago de Compostela, Santiago de Compostela (Spain); Plackett, R. [Diamond Light Source Ltd., Didcot, Oxfordshire (United Kingdom); and others

    2015-03-21

    The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge.

  13. Pixel-by-pixel analysis of DCE-MRI curve shape patterns in knees of active and inactive juvenile idiopathic arthritis patients

    Energy Technology Data Exchange (ETDEWEB)

    Hemke, Robert; Lavini, Cristina; Maas, Mario [University of Amsterdam, Department of Radiology, Academic Medical Center, Amsterdam (Netherlands); Nusman, Charlotte M. [University of Amsterdam, Department of Radiology, Academic Medical Center, Amsterdam (Netherlands); University of Amsterdam, Department of Pediatric Hematology, Immunology, Rheumatology and Infectious Disease, Emma Children' s Hospital AMC, Amsterdam (Netherlands); Berg, J.M. van den; Schonenberg-Meinema, Dieneke; Kuijpers, Taco W. [University of Amsterdam, Department of Pediatric Hematology, Immunology, Rheumatology and Infectious Disease, Emma Children' s Hospital AMC, Amsterdam (Netherlands); Dolman, Koert M. [Department of Pediatric Rheumatology, Reade, Amsterdam (Netherlands); St. Lucas Andreas Hospital, Department of Pediatrics, Amsterdam (Netherlands); Rossum, Marion A.J. van [University of Amsterdam, Department of Pediatric Hematology, Immunology, Rheumatology and Infectious Disease, Emma Children' s Hospital AMC, Amsterdam (Netherlands); Department of Pediatric Rheumatology, Reade, Amsterdam (Netherlands)

    2014-07-15

    To compare DCE-MRI parameters and the relative number of time-intensity curve (TIC) shapes as derived from pixel-by-pixel DCE-MRI TIC shape analysis between knees of clinically active and inactive juvenile idiopathic arthritis (JIA) patients. DCE-MRI data sets were prospectively obtained. Patients were classified into two clinical groups: active disease (n = 43) and inactive disease (n = 34). Parametric maps, showing seven different TIC shape types, were created per slice. Statistical measures of different TIC shapes, maximal enhancement (ME), maximal initial slope (MIS), initial area under the curve (iAUC), time-to-peak (TTP), enhancing volume (EV), volume transfer constant (K {sup trans}), extravascular space fractional volume (V{sub e}) and reverse volume transfer constant (k{sub ep}) of each voxel were calculated in a three-dimensional volume-of-interest of the synovial membrane. Imaging findings from 77 JIA patients were analysed. Significantly higher numbers of TIC shape 4 (P = 0.008), median ME (P = 0.015), MIS (P = 0.001) and iAUC (P = 0.002) were observed in clinically active compared with inactive patients. TIC shape 5 showed higher presence in the clinically inactive patients (P = 0.036). The pixel-by-pixel DCE-MRI TIC shape analysis method proved capable of differentiating clinically active from inactive JIA patients by the difference in the number of TIC shapes, as well as the descriptive parameters ME, MIS and iAUC. (orig.)

  14. Signal and noise transfer properties of CMOS based active pixel flat panel imager coupled to structured CsI:Tl.

    Science.gov (United States)

    Arvanitis, C D; Bohndiek, S E; Blakesley, J; Olivo, A; Speller, R D

    2009-01-01

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors can be optically coupled to CsI:Tl phosphors forming a indirect active pixel flat panel imager (APFPI) for high performance medical imaging. The aim of this work is to determine the x-ray imaging capabilities of CMOS-based APFPI and study the signal and noise transfer properties of CsI:Tl phosphors. Three different CsI:Tl phosphors from two different vendors have been used to produce three system configurations. The performance of each system configuration has been studied in terms of the modulation transfer function (MTF), noise power spectra, and detective quantum efficiency (DQE) in the mammographic energy range. A simple method to determine quantum limited systems in this energy range is also presented. In addition, with aid of monochromatic synchrotron radiation, the effect of iodine characteristic x-rays of the CsI:Tl on the MTF has been determined. A Monte Carlo simulation of the signal transfer properties of the imager is also presented in order to study the stages that degrade the spatial resolution of our current system. The effect of using substrate patterning during the growth of CsI:Tl columnar structure was also studied, along with the effect of CsI:Tl fixed pattern noise due to local variations in the scintillation light. CsI:Tl fixed pattern noise appears to limit the performance of our current system configurations. All the system configurations are quantum limited at 0.23 microC/kg with two of them having DQE (0) equal to 0.57. Active pixel flat panel imagers are shown to be digital x-ray imagers with almost constant DQE throughout a significant part of their dynamic range and in particular at very low exposures.

  15. Performance of the reconstruction algorithms of the FIRST experiment pixel sensors vertex detector

    CERN Document Server

    Rescigno, R; Juliani, D; Spiriti, E; Baudot, J; Abou-Haidar, Z; Agodi, C; Alvarez, M A G; Aumann, T; Battistoni, G; Bocci, A; Böhlen, T T; Boudard, A; Brunetti, A; Carpinelli, M; Cirrone, G A P; Cortes-Giraldo, M A; Cuttone, G; De Napoli, M; Durante, M; Gallardo, M I; Golosio, B; Iarocci, E; Iazzi, F; Ickert, G; Introzzi, R; Krimmer, J; Kurz, N; Labalme, M; Leifels, Y; Le Fevre, A; Leray, S; Marchetto, F; Monaco, V; Morone, M C; Oliva, P; Paoloni, A; Patera, V; Piersanti, L; Pleskac, R; Quesada, J M; Randazzo, N; Romano, F; Rossi, D; Rousseau, M; Sacchi, R; Sala, P; Sarti, A; Scheidenberger, C; Schuy, C; Sciubba, A; Sfienti, C; Simon, H; Sipala, V; Tropea, S; Vanstalle, M; Younis, H

    2014-01-01

    Hadrontherapy treatments use charged particles (e.g. protons and carbon ions) to treat tumors. During a therapeutic treatment with carbon ions, the beam undergoes nuclear fragmentation processes giving rise to significant yields of secondary charged particles. An accurate prediction of these production rates is necessary to estimate precisely the dose deposited into the tumours and the surrounding healthy tissues. Nowadays, a limited set of double differential carbon fragmentation cross-section is available. Experimental data are necessary to benchmark Monte Carlo simulations for their use in hadrontherapy. The purpose of the FIRST experiment is to study nuclear fragmentation processes of ions with kinetic energy in the range from 100 to 1000 MeV/u. Tracks are reconstructed using information from a pixel silicon detector based on the CMOS technology. The performances achieved using this device for hadrontherapy purpose are discussed. For each reconstruction step (clustering, tracking and vertexing), different...

  16. Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade

    CERN Document Server

    Centis Vignali, Matteo; Eichhorn, Thomas; Garutti, Erika; Junkes, Alexandra; Steinbrueck, Georg; bigskip; Institut fur Experimentalphysik; Luruper Chaussee; Hamburg; Deutsches Elektronen-Synchrotron Notkestra; e; Hamburg

    2016-01-01

    In this paper, the results obtained from the characterisation of 100 and 200\\,$\\mu$m thick p-bulk pad diodes and strip sensors irradiated up to fluences of $\\Phi_{eq} = 1.3 \\times 10^{16}$ cm$^{-2}$ are shown.

  17. Particle fallout/activity sensor

    Science.gov (United States)

    Curtis, Ihlefeld M. (Inventor); Youngquist, Robert C. (Inventor); Moerk, John S. (Inventor); Rose, Kenneth A., III (Inventor)

    1995-01-01

    A particle fallout/activity sensor measures relative amounts of dust or other particles which collect on a mirror in an area to be monitored. The sensor includes a sensor module and a data acquisition module, both of which can be operated independently of one another or in combination with one another. The sensor module includes a housing containing the mirror, an LED assembly for illuminating the mirror and an optical detector assembly for detecting light scattered off of the mirror by dust or other particles collected thereon. A microprocessor controls operation of the sensor module's components and displays results of a measurement on an LCD display mounted on the housing. A push button switch is also mounted on the housing which permits manual initiation of a measurement. The housing is constructed of light absorbing material, such as black delrin, which minimizes detection of light by the optical detector assembly other than that scattered by dust or particles on the mirror. The data acquisition module can be connected to the sensor module and includes its own microprocessor, a timekeeper and other digital circuitry for causing the sensor module to make a measurement periodically and send the measurement data to the data acquisition module for display and storage in memory for later retrieval and transfer to a separate computer. The time tagged measurement data can also be used to determine the relative level of activity in the monitored area since this level is directly related to the amount of dust or particle fallout in the area.

  18. Alpine Pixel Detector Layout

    CERN Document Server

    Delebecque, P; The ATLAS collaboration; Geffroy, N; Massol, N; Rambure, T; Todorov, T

    2013-01-01

    A description of an optimized layout of pixel sensors based on a stave that combines both barrel and endcap module orientations. The mechanical stiffness of the structure is provided by carbon fiber shells spaced by carbon foam. The cooling of the modules is provided by two-phase $CO_{2}$ flowing in a thin titanium pipe glued inside the carbon fiber foam. The electrical services of all modules are provided by a single stave flex. This layout eliminates the need for separate barrel and endcap detector structures, and therefore the barrel services material in front of the endcap. The transition from barrel to endcap module orientation is optimized separately for each layer in order to minimize the active pixel area and the traversed material. The sparse module spacing in the endcap part of the stave allows for multiple fixation points, and for a stiff overall structure composed only of staves interconnected by stiff disks.

  19. Optimized sampling strategy of Wireless sensor network for validation of remote sensing products over heterogeneous coarse-resolution pixel

    Science.gov (United States)

    Peng, J.; Liu, Q.; Wen, J.; Fan, W.; Dou, B.

    2015-12-01

    Coarse-resolution satellite albedo products are increasingly applied in geographical researches because of their capability to characterize the spatio-temporal patterns of land surface parameters. In the long-term validation of coarse-resolution satellite products with ground measurements, the scale effect, i.e., the mismatch between point measurement and pixel observation becomes the main challenge, particularly over heterogeneous land surfaces. Recent advances in Wireless Sensor Networks (WSN) technologies offer an opportunity for validation using multi-point observations instead of single-point observation. The difficulty is to ensure the representativeness of the WSN in heterogeneous areas with limited nodes. In this study, the objective is to develop a ground-based spatial sampling strategy through consideration of the historical prior knowledge and avoidance of the information redundancy between different sensor nodes. Taking albedo as an example. First, we derive monthly local maps of albedo from 30-m HJ CCD images a 3-year period. Second, we pick out candidate points from the areas with higher temporal stability which helps to avoid the transition or boundary areas. Then, the representativeness (r) of each candidate point is evaluated through the correlational analysis between the point-specific and area-average time sequence albedo vector. The point with the highest r was noted as the new sensor point. Before electing a new point, the vector component of the selected points should be taken out from the vectors in the following correlational analysis. The selection procedure would be ceased once if the integral representativeness (R) meets the accuracy requirement. Here, the sampling method is adapted to both single-parameter and multi-parameter situations. Finally, it is shown that this sampling method has been effectively worked in the optimized layout of Huailai remote sensing station in China. The coarse resolution pixel covering this station could be

  20. CVD diamond pixel development

    CERN Document Server

    Stone, R; Koeth, T W; Perera, L P; Schnetzer, S; Worm, S

    2002-01-01

    Pixel detectors using synthetic diamond are an attractive alternative to silicon for use in radiation harsh environments such as at the Large Hadron Collider (LHC). Recent test beam results using Compact Muon Solenoid pixel readout electronics are presented, which demonstrate a hit efficiency of 95% and position resolution of 31 mu m for a diamond pixel sensor with 125 * 125 mu m/sup 2/ pitch. (5 refs).

  1. System for Digital 1D-Image Processing with 1024 Pixel CCD Sensor

    Directory of Open Access Journals (Sweden)

    J. Misun

    1993-11-01

    Full Text Available The conception of system for digital 1D-images processing with digital CCD camera is presented. The system is created from these three basic parts: the digital CCD camera with linear image sensor CCD L133C, 8-bit interface and a personal computer. The scanning digital CCD camera generated a video signals, which are processed in the analog signal processor. The output signal is continually converted to 8-bit data words in A/D converter. This data words maybe transfer over a bus driver to the operation memory of personal computer, by setting one of the three work regimes of digital CCD camera. Some application possibilities and basic technical parameters of this system are given.

  2. Activity Recognition Invariant to Sensor Orientation with Wearable Motion Sensors.

    Science.gov (United States)

    Yurtman, Aras; Barshan, Billur

    2017-08-09

    Most activity recognition studies that employ wearable sensors assume that the sensors are attached at pre-determined positions and orientations that do not change over time. Since this is not the case in practice, it is of interest to develop wearable systems that operate invariantly to sensor position and orientation. We focus on invariance to sensor orientation and develop two alternative transformations to remove the effect of absolute sensor orientation from the raw sensor data. We test the proposed methodology in activity recognition with four state-of-the-art classifiers using five publicly available datasets containing various types of human activities acquired by different sensor configurations. While the ordinary activity recognition system cannot handle incorrectly oriented sensors, the proposed transformations allow the sensors to be worn at any orientation at a given position on the body, and achieve nearly the same activity recognition performance as the ordinary system for which the sensor units are not rotatable. The proposed techniques can be applied to existing wearable systems without much effort, by simply transforming the time-domain sensor data at the pre-processing stage.

  3. Pixel pitch and particle energy influence on the dark current distribution of neutron irradiated CMOS image sensors.

    Science.gov (United States)

    Belloir, Jean-Marc; Goiffon, Vincent; Virmontois, Cédric; Raine, Mélanie; Paillet, Philippe; Duhamel, Olivier; Gaillardin, Marc; Molina, Romain; Magnan, Pierre; Gilard, Olivier

    2016-02-22

    The dark current produced by neutron irradiation in CMOS Image Sensors (CIS) is investigated. Several CIS with different photodiode types and pixel pitches are irradiated with various neutron energies and fluences to study the influence of each of these optical detector and irradiation parameters on the dark current distribution. An empirical model is tested on the experimental data and validated on all the irradiated optical imagers. This model is able to describe all the presented dark current distributions with no parameter variation for neutron energies of 14 MeV or higher, regardless of the optical detector and irradiation characteristics. For energies below 1 MeV, it is shown that a single parameter has to be adjusted because of the lower mean damage energy per nuclear interaction. This model and these conclusions can be transposed to any silicon based solid-state optical imagers such as CIS or Charged Coupled Devices (CCD). This work can also be used when designing an optical imager instrument, to anticipate the dark current increase or to choose a mitigation technique.

  4. Pixel-level continuous-time incremental sigma-delta A/D converter for THz sensors

    Science.gov (United States)

    Khatib, Moustafa; Perenzoni, Matteo

    2016-04-01

    A readout channel based on continuous-time incremental sigma-delta analog-to-digital converter for FET-based terahertz (THz) imaging applications was implemented in a 0.15 μm standard CMOS technology. The designed readout circuit is suitable for implementation in pixel arrays due to its compact size and power consumption. The system-level analysis used to define the modulator parameters and to specify its analog building blocks is presented. The loop filter has been realized by using a Gm-C integrator. Circuit linearization techniques have been implemented to improve the linearity of the transconductor cell and reduce the impact of parasitic capacitances. Moreover, chopper stabilization technique is adopted in the loop filter, significantly reducing the low-frequency flicker noise thereby preserving the Noise Equivalent Power (NEP) of the FET detector within the required specifications of minimum detectable signal. The resulting input referred noise voltage is 87.5 nV/√Hz . The incremental ADC achieves 68-dB peak signal-to-noise-and-distortion-ratio (SNDR), equivalent to 11 bits effective resolution over 1 kHz signal bandwidth at 1 MHz sampling frequency. In order to meet the requirements of large sensor arrays, a first order architecture is realized. This leads to lower area occupancy and power consumption. The readout circuit draws 80 μW of power from a supply voltage of 1.8 V. The channel occupies an area of 90 x 273μm2.

  5. Front-end electronics in a 65 nm CMOS process for high density readout of pixel sensors

    Science.gov (United States)

    Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Re, Valerio; Traversi, Gianluca

    2011-09-01

    In future high energy physics experiments (HEP), readout integrated circuits for vertexing and tracking applications will be implemented by means of CMOS devices belonging to processes with minimum feature size in the 100 nm span. In these nanoscale technologies the impact of new dielectric materials and processing techniques on the analog behavior of MOSFETs has to be carefully evaluated. This paper is concerned with the study of the analog properties, in particular in terms of noise performance and radiation hardness, of MOSFET devices belonging to a 65 nm CMOS low power technology. The behavior of the 1/ f and white noise terms is studied as a function of the main device parameters before and after exposure to 10 keV X-rays and 60Co γ-rays. A prototype chip designed in a 65 nm CMOS process including deep n-well MAPS structures and a fast front-end conceived for the readout of high-resistivity pixel sensors will be introduced.

  6. Transition-edge sensor pixel parameter design of the microcalorimeter array for the x-ray integral field unit on Athena

    Science.gov (United States)

    Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Miniussi, A. R.; Porter, F. S.; Sadleir, J. E.; Sakai, K.; Wakeham, N. A.; Wassell, E. J.; Yoon, W.; Bennett, D. A.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Morgan, K. M.; Pappas, C. G.; Reintsema, C. N.; Swetz, D. S.; Ullom, J. N.; Irwin, K. D.; Akamatsu, H.; Gottardi, L.; den Hartog, R.; Jackson, B. D.; van der Kuur, J.; Barret, D.; Peille, P.

    2016-07-01

    The focal plane of the X-ray integral field unit (X-IFU) for ESA's Athena X-ray observatory will consist of 4000 transition edge sensor (TES) x-ray microcalorimeters optimized for the energy range of 0.2 to 12 keV. The instrument will provide unprecedented spectral resolution of 2.5 eV at energies of up to 7 keV and will accommodate photon fluxes of 1 mCrab (90 cps) for point source observations. The baseline configuration is a uniform large pixel array (LPA) of 4.28" pixels that is read out using frequency domain multiplexing (FDM). However, an alternative configuration under study incorporates an 18 × 18 small pixel array (SPA) of 2" pixels in the central 36" region. This hybrid array configuration could be designed to accommodate higher fluxes of up to 10 mCrab (900 cps) or alternately for improved spectral performance (< 1.5 eV) at low count-rates. In this paper we report on the TES pixel designs that are being optimized to meet these proposed LPA and SPA configurations. In particular we describe details of how important TES parameters are chosen to meet the specific mission criteria such as energy resolution, count-rate and quantum efficiency, and highlight performance trade-offs between designs. The basis of the pixel parameter selection is discussed in the context of existing TES arrays that are being developed for solar and x-ray astronomy applications. We describe the latest results on DC biased diagnostic arrays as well as large format kilo-pixel arrays and discuss the technical challenges associated with integrating different array types on to a single detector die.

  7. Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

    Directory of Open Access Journals (Sweden)

    Orly Yadid-Pecht

    2012-07-01

    Full Text Available Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage “smart” image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR and Dynamic Range (DR as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  8. Beam Test Results of Thin n-in-p 3D and Planar Pixel Sensors for the High Luminosity LHC Tracker Upgrade at CMS

    CERN Document Server

    Zoi, Irene; Dalla Betta, G. F; Dinardo, Mauro; Giacomini, G; Menasce, Dario; Mendicino, R; Meschini, Marco; Messineo, Alberto; Moroni, Luigi; Ronchin, S; Sultan, D.M.S; Uplegger, Lorenzo; Vernieri, Caterina; Viliani, Lorenzo; Zuolo, Davide

    2017-01-01

    This is necessary for the pixel tracker that is the closest to the interaction point and will be replaced. In this paper, the results, from beam tests performed at Fermilab Test Beam Facility, of thin (100 $\\mu$m and 130 $\\mu$m thick) n-in-p type sensors, assembled into hybrid single chip modules bump bonded to the PSI46dig readou...

  9. Design and Realisation of Integrated Circuits for the Readout of Pixel Sensors in High Energy Physics and Biomedical Imaging

    CERN Document Server

    Peric, Ivan

    2004-01-01

    Several application specific microchips (ASICs) for the readout of pixel detectors have been designed, tested and described in this thesis. The first chapter gives the detailed description of the pixel-readout chip for the ATLAS pixel detector (FEI). The chip is now in operation as the innermost electronic component of the ATLAS detector. The chip for steering of DEPFET matrix (SWITCHER) is described in the second chapter. The chip is implemented in a high-voltage CMOS technology, it generates fast high voltage signals. Finally, a novel pixel readout chip for a hybrid x-ray pixel detector based on direct conversion is introduced. The chip (CIX) has joint photon counting and integrating capability.

  10. Small-Scale Readout Systems Prototype for the STAR PIXEL Detector

    Energy Technology Data Exchange (ETDEWEB)

    Szelezniak, Michal A.; Besson, Auguste; Colledani, Claude; Dorokhov, Andrei; Dulinski, Wojciech; Greiner, Leo C.; Himmi, Abdelkader; Hu, Christine; Matis, Howard S.; Ritter, Hans Georg; Rose, Andrew; Shabetai, Alexandre; Stezelberger, Thorsten; Sun, Xiangming; Thomas, Jim H.; Valin, Isabelle; Vu, Chinh Q.; Wieman, Howard H.; Winter, Marc

    2008-10-01

    A prototype readout system for the STAR PIXEL detector in the Heavy Flavor Tracker (HFT) vertex detector upgrade is presented. The PIXEL detector is a Monolithic Active Pixel Sensor (MAPS) based silicon pixel vertex detector fabricated in a commercial CMOS process that integrates the detector and front-end electronics layers in one silicon die. Two generations ofMAPS prototypes designed specifically for the PIXEL are discussed. We have constructed a prototype telescope system consisting of three small MAPS sensors arranged in three parallel and coaxial planes with a readout system based on the readout architecture for PIXEL. This proposed readout architecture is simple and scales to the size required to readout the final detector. The real-time hit finding algorithm necessary for data rate reduction in the 400 million pixel detector is described, and aspects of the PIXEL system integration into the existing STAR framework are addressed. The complete system has been recently tested and shown to be fully functional.

  11. Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate arXiv

    CERN Document Server

    Benoit, M.; Casanova, R.; Cavallaro, E.; Chen, H.; Chen, K.; Di Bello, F.A.; Ferrere, D.; Frizzell, D.; Golling, T.; Gonzalez-Sevilla, S.; Grinstein, S.; Iacobucci, G.; Kiehn, M.; Lanni, F.; Liu, H.; Metcalfe, J.; Meng, L.; Merlassino, C.; Miucci, A.; Muenstermann, D.; Nessi, M.; Okawa, H.; Perić, I.; Rimoldi, M.; Ristić, B.; Sultan, D M S; Terzo, S.; Vicente Barrero Pinto, M.; Vilella Figueras, E.; Weber, M.; Weston, T.; Wu, W.; Xie, J.; Xu, L.; Zaffaroni, E.; Zhang, M.

    In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\\mathrm{80}$ to $\\mathrm{1000~\\Omega \\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.

  12. Lidar-based Evaluation of Sub-pixel Forest Structural Characteristics and Sun-sensor Geometries that Influence MODIS Leaf Area Index Product Accuracy and Retrieval Quality

    Science.gov (United States)

    Jensen, J.; Humes, K. S.

    2010-12-01

    Leaf Area Index (LAI) is an important structural component of vegetation because the foliar surface of plants largely controls the exchange of water, nutrients, and energy within terrestrial ecosystems. Because LAI is a key variable used to model water, energy, and biogeochemical cycles, Moderate Resolution Imaging Spectroradiometer (MODIS) LAI products are widely used in many studies to better understand and quantify exchanges between the terrestrial surface and the atmosphere. Within the last decade, significant resources and efforts have been invested toward MODIS LAI validation for a variety of biome types and a suite of published work has provided valuable feedback on the agreement between MODIS-derived LAI via radiative transfer (RT) inversion compared to multispectral-based empirical estimates of LAI. Our study provides an alternative assessment of the MODIS LAI product for a 58,000 ha evergreen needleleaf forest located in the western Rocky Mountain range in northern Idaho by using lidar data to model (R2=0.86, RMSE=0.76) and map fine-scale estimates of vegetation structure over a region for which multispectral LAI estimates were unacceptable. In an effort to provide feedback on algorithm performance, we evaluated the agreement between lidar-modeled and MODIS-retrieved LAI by specific MODIS LAI retrieval algorithm and product quality definitions. We also examined the sub-pixel vegetation structural conditions and satellite-sensor geometries that tend to influence MODIS LAI retrieval algorithm and product quality over our study area. Our results demonstrate a close agreement between lidar LAI and MODIS LAI retrieved using the main RT algorithm and consistently large MODIS LAI overestimates for pixels retrieved from a saturated set of RT solutions. Our evaluation also illuminated some conditions for which sub-pixel structural characteristics and sun-sensor geometries influenced retrieval quality and product agreement. These conditions include: 1) the

  13. Direct tests of a pixelated microchannel plate as the active element of a shower maximum detector

    Energy Technology Data Exchange (ETDEWEB)

    Apresyan, A. [California Institute of Technology, Pasadena, CA (United States); Los, S. [Fermi National Accelerator Laboratory, Batavia, IL (United States); Pena, C.; Presutti, F. [California Institute of Technology, Pasadena, CA (United States); Ronzhin, A. [Fermi National Accelerator Laboratory, Batavia, IL (United States); Spiropulu, M.; Xie, S. [California Institute of Technology, Pasadena, CA (United States)

    2016-08-21

    One possibility to make a fast and radiation resistant shower maximum detector is to use a secondary emitter as an active element. We report our studies of microchannel plate photomultipliers (MCPs) as the active element of a shower-maximum detector. We present test beam results obtained using Photonis XP85011 to detect secondary particles of an electromagnetic shower. We focus on the use of the multiple pixels on the Photonis MCP in order to find a transverse two-dimensional shower distribution. A spatial resolution of 0.8 mm was obtained with an 8 GeV electron beam. A method for measuring the arrival time resolution for electromagnetic showers is presented, and we show that time resolution better than 40 ps can be achieved.

  14. Direct tests of a pixelated microchannel plate as the active element of a shower maximum detector

    Science.gov (United States)

    Apresyan, A.; Los, S.; Pena, C.; Presutti, F.; Ronzhin, A.; Spiropulu, M.; Xie, S.

    2016-08-01

    One possibility to make a fast and radiation resistant shower maximum detector is to use a secondary emitter as an active element. We report our studies of microchannel plate photomultipliers (MCPs) as the active element of a shower-maximum detector. We present test beam results obtained using Photonis XP85011 to detect secondary particles of an electromagnetic shower. We focus on the use of the multiple pixels on the Photonis MCP in order to find a transverse two-dimensional shower distribution. A spatial resolution of 0.8 mm was obtained with an 8 GeV electron beam. A method for measuring the arrival time resolution for electromagnetic showers is presented, and we show that time resolution better than 40 ps can be achieved.

  15. Chromatic X-ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC

    Science.gov (United States)

    Bellazzini, R.; Spandre, G.; Brez, A.; Minuti, M.; Pinchera, M.; Mozzo, P.

    2013-02-01

    An innovative X-ray imaging sensor based on Chromatic Photon Counting technology with intrinsic digital characteristics is presented. The system counts individually the incident X-ray photons and selects them according to their energy to produce two color images per exposure. The energy selection occurs in real time and at radiographic imaging speed (GHz global counting rate). Photon counting, color mode and a very fine spatial resolution (more than 10 LP/mm at MTF50) allow to obtain a high ratio between image quality and absorbed dose. The individual building block of the imaging system is a two-side buttable semiconductor radiation detector made of a thin pixellated CdTe crystal coupled to a large area VLSI CMOS pixel ASIC. Modules with 1, 2, 4, and 8 block units have been built. The largest module has 25 × 2.5 cm2 sensitive area. Results and images obtained from testing different modules are presented.

  16. Simulation of monolithic active pixels in deep sub-micron technologies

    CERN Document Server

    Manolopoulos, S; Turchetta, R

    2002-01-01

    The use of monolithic active pixels (MAPS) has quickly spread in a number of scientific fields ranging from imaging to high-energy particle physics applications. The success of MAPS is due to a number of reasons, for example their low power consumption, fast readout, high spatial resolution and low cost. The latter reflects the use of standard CMOS processes for fabrication. In this paper, the performance of MAPS designed in 0.25 mu m technology will be modelled by means of TCAD device simulation software. The dependence of the device performance on parameters that affect the detection of minimum ionising particles (MIP) will be studied aiming at the optimisation of the detector performance. More specifically, the simulations will focus on the influence of the epitaxial layer thickness on the amount of collected charge, that defines the signal and the cluster size, that affects the spatial resolution.

  17. Organic smart pixels

    Science.gov (United States)

    Dodabalapur, A.; Bao, Z.; Makhija, A.; Laquindanum, J. G.; Raju, V. R.; Feng, Y.; Katz, H. E.; Rogers, J.

    1998-07-01

    The fabrication and characteristics of organic smart pixels are described. The smart pixel reported in this letter consists of a single organic thin-film field effect transistor (FET) monolithically integrated with an organic light-emitting diode. The FET active material is a regioregular polythiophene. The maximum optical power emitted by the smart pixel is about 300 nW/cm2 corresponding to a luminance of ˜2300 cd/m2.

  18. Development of enhanced double-sided 3D radiation sensors for pixel detector upgrades at HL-LHC

    CERN Document Server

    Povoli, Marco

    The upgrades of High Energy Physics (HEP) experiments at the Large Hadron Collider (LHC) will call for new radiation hard technologies to be applied in the next generations of tracking devices that will be required to withstand extremely high radiation doses. In this sense, one of the most promising approaches to silicon detectors, is the so called 3D technology. This technology realizes columnar electrodes penetrating vertically into the silicon bulk thus decoupling the active volume from the inter-electrode distance. 3D detectors were first proposed by S. Parker and collaborators in the mid ’90s as a new sensor geometry intended to mitigate the effects of radiation damage in silicon. 3D sensors are currently attracting growing interest in the field of High Energy Physics, despite their more complex and expensive fabrication, because of the much lower operating voltages and enhanced radiation hardness. 3D technology was also investigated in other laboratories, with the intent of reducing the fabrication co...

  19. Active thermal isolation for temperature responsive sensors

    Science.gov (United States)

    Martinson, Scott D. (Inventor); Gray, David L. (Inventor); Carraway, Debra L. (Inventor); Reda, Daniel C. (Inventor)

    1994-01-01

    A temperature responsive sensor is located in the airflow over the specified surface of a body and is maintained at a constant temperature. An active thermal isolator is located between this temperature responsive sensor and the specified surface of the body. The temperature of this isolator is controlled to reduce conductive heat flow from the temperature responsive sensor to the body. This temperature control includes: (1) operating the isolator at the same temperature as the constant temperature of the sensor and (2) establishing a fixed boundary temperature which is either less than or equal to or slightly greater than the sensor constant temperature.

  20. Multimass velocity-map imaging with the Pixel Imaging Mass Spectrometry (PImMS) sensor: an ultra-fast event-triggered camera for particle imaging.

    Science.gov (United States)

    Clark, Andrew T; Crooks, Jamie P; Sedgwick, Iain; Turchetta, Renato; Lee, Jason W L; John, Jaya John; Wilman, Edward S; Hill, Laura; Halford, Edward; Slater, Craig S; Winter, Benjamin; Yuen, Wei Hao; Gardiner, Sara H; Lipciuc, M Laura; Brouard, Mark; Nomerotski, Andrei; Vallance, Claire

    2012-11-15

    We present the first multimass velocity-map imaging data acquired using a new ultrafast camera designed for time-resolved particle imaging. The PImMS (Pixel Imaging Mass Spectrometry) sensor allows particle events to be imaged with time resolution as high as 25 ns over data acquisition times of more than 100 μs. In photofragment imaging studies, this allows velocity-map images to be acquired for multiple fragment masses on each time-of-flight cycle. We describe the sensor architecture and present bench-testing data and multimass velocity-map images for photofragments formed in the UV photolysis of two test molecules: Br(2) and N,N-dimethylformamide.

  1. Pixel Experiments

    DEFF Research Database (Denmark)

    Søndergaard, Karin; Petersen, Kjell Yngve; Augustesen, Christina

    2015-01-01

    elucidate and exemplify already well-known problems in relation to the experience of vertical and horizontal lighting. Pixel Experiments exist as a synergy between speculative test setups and lighting design in practice. This book is one of four books that is published in connection with the research......Pixel Experiments The term pixel is traditionally defined as any of the minute elements that together constitute a larger context or image. A pixel has its own form and is the smallest unit seen within a larger structure. In working with the potentials of LED technology in architectural lighting...... lighting design in practice, one quickly experiences and realises that there are untapped potentials in the attributes of LED technology. In this research, speculative studies have been made working with the attributes of LEDs in architectural contexts, with the ambition to ascertain new strategies...

  2. Hybrid Pixel Detectors for gamma/X-ray imaging

    Science.gov (United States)

    Hatzistratis, D.; Theodoratos, G.; Zografos, V.; Kazas, I.; Loukas, D.; Lambropoulos, C. P.

    2015-09-01

    Hybrid pixel detectors are made by direct converting high-Z semi-insulating single crystalline material coupled to complementary-metal-oxide semiconductor (CMOS) readout electronics. They are attractive because direct conversion exterminates all the problems of spatial localization related to light diffusion, energy resolution, is far superior from the combination of scintillation crystals and photomultipliers and lithography can be used to pattern electrodes with very fine pitch. We are developing 2-D pixel CMOS ASICs, connect them to pixilated CdTe crystals with the flip chip and bump bonding method and characterize the hybrids. We have designed a series of circuits, whose latest member consists of a 50×25 pixel array with 400um pitch and an embedded controller. In every pixel a full spectroscopic channel with time tagging information has been implemented. The detectors are targeting Compton scatter imaging and they can be used for coded aperture imaging too. Hybridization using CMOS can overcome the limit put on pixel circuit complexity by the use of thin film transistors (TFT) in large flat panels. Hybrid active pixel sensors are used in dental imaging and other applications (e.g. industrial CT etc.). Thus X-ray imaging can benefit from the work done on dynamic range enhancement methods developed initially for visible and infrared CMOS pixel sensors. A 2-D CMOS ASIC with 100um pixel pitch to demonstrate the feasibility of such methods in the context of X-ray imaging has been designed.

  3. Intruder Activity Analysis under Unreliable Sensor Networks

    Energy Technology Data Exchange (ETDEWEB)

    Tae-Sic Yoo; Humberto E. Garcia

    2007-09-01

    This paper addresses the problem of counting intruder activities within a monitored domain by a sensor network. The deployed sensors are unreliable. We characterize imperfect sensors with misdetection and false-alarm probabilities. We model intruder activities with Markov Chains. A set of Hidden Markov Models (HMM) models the imperfect sensors and intruder activities to be monitored. A novel sequential change detection/isolation algorithm is developed to detect and isolate a change from an HMM representing no intruder activity to another HMM representing some intruder activities. Procedures for estimating the entry time and the trace of intruder activities are developed. A domain monitoring example is given to illustrate the presented concepts and computational procedures.

  4. Active thermal isolation for temperature responsive sensors

    Science.gov (United States)

    Martinson, Scott D. (Inventor); Gray, David L. (Inventor); Carraway, Debra L. (Inventor); Reda, Daniel C. (Inventor)

    1994-01-01

    The detection of flow transition between laminar and turbulent flow and of shear stress or skin friction of airfoils is important in basic research for validation of airfoil theory and design. These values are conventionally measured using hot film nickel sensors deposited on a polyimide substrate. The substrate electrically insulates the sensor and underlying airfoil but is prevented from thermally isolating the sensor by thickness constraints necessary to avoid flow contamination. Proposed heating of the model surface is difficult to control, requires significant energy expenditures, and may alter the basic flow state of the airfoil. A temperature responsive sensor is located in the airflow over the specified surface of a body and is maintained at a constant temperature. An active thermal isolator is located between this temperature responsive sensor and the specific surface of the body. The total thickness of the isolator and sensor avoid any contamination of the flow. The temperature of this isolator is controlled to reduce conductive heat flow from the temperature responsive sensor to the body. This temperature control includes (1) operating the isolator at the same temperature as the constant temperature of the sensor; and (2) establishing a fixed boundary temperature which is either less than or equal to, or slightly greater than the sensor constant temperature. The present invention accordingly thermally isolates a temperature responsive sensor in an energy efficient, controllable manner while avoiding any contamination of the flow.

  5. An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process

    Directory of Open Access Journals (Sweden)

    Isao Takayanagi

    2018-01-01

    Full Text Available To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke−. Readout noise under the highest pixel gain condition is 1 e− with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR approach.

  6. An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.

    Science.gov (United States)

    Takayanagi, Isao; Yoshimura, Norio; Mori, Kazuya; Matsuo, Shinichiro; Tanaka, Shunsuke; Abe, Hirofumi; Yasuda, Naoto; Ishikawa, Kenichiro; Okura, Shunsuke; Ohsawa, Shinji; Otaka, Toshinori

    2018-01-12

    To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke-. Readout noise under the highest pixel gain condition is 1 e- with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7", 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach.

  7. Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Fahim Farah, Fahim Farah [Northwestern U. (main); Deptuch, Grzegorz W. [Fermilab; Hoff, James R. [Fermilab; Mohseni, Hooman [Northwestern U. (main)

    2015-08-28

    The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

  8. Physical Activity Recognition from Smartphone Embedded Sensors

    DEFF Research Database (Denmark)

    Prudêncio, João; Aguiar, Ana; Roetter, Daniel Enrique Lucani

    2013-01-01

    The ubiquity of smartphones has motivated efforts to use the embedded sensors to detect various aspects of user context to transparently provide personalized and contextualized services to the user. One relevant piece of context is the physical activity of the smartphone user. In this paper, we...... propose a novel set of features for distinguishing five physical activities using only sensors embedded in the smartphone. Specifically, we introduce features that are normalized using the orientation sensor such that horizontal and vertical movements are explicitly computed. We evaluate a neural network...

  9. Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor

    NARCIS (Netherlands)

    Xie, N.; Theuwissen, A.J.P.

    2013-01-01

    A micro-digital sun sensor (?DSS) is a sun detector which senses a satellite’s instant attitude angle with respect to the sun. The core of this sensor is a system-on-chip imaging chip which is referred to as APS+. The APS+ integrates a CMOS active pixel sensor (APS) array of 368×368??pixels , a

  10. Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

    CERN Document Server

    Giacomini, Gabriele; Bomben, Marco; Boscardin, Maurizio; Bosisio, Luciano; Calderini, Giovanni; Chauveau, Jacques; La Rosa, Alessandro; Marchiori, Giovanni; Zorzi, Nicola

    2014-01-01

    In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these requirements. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

  11. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  12. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  13. Novel integrated CMOS pixel structures for vertex detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bieser, Fred; Chen, Yandong; Gareus, Robin; Matis, Howard S.; Oldenburg, Markus; Retiere, Fabrice; Ritter, Hans Georg; Wieman, Howard H.; Yamamoto, Eugene

    2003-10-29

    Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections.

  14. Measurement of charm and beauty-production in deep inelastic scattering at HERA and test beam studies of ATLAS pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Libov, Vladyslav

    2013-08-15

    A measurement of charm and beauty production in Deep Inelastic Scattering at HERA is presented. The analysis is based on the data sample collected by the ZEUS detector in the period from 2003 to 2007 corresponding to an integrated luminosity of 354 pb{sup -1}. The kinematic region of the measurement is given by 54.2(5) GeV for charm (beauty) and -1.6<{eta}{sup jet}<2.2 for both charm and beauty, where E{sup jet}{sub T} and {eta}{sup jet} are the transverse energy and pseudorapidity of the jet, respectively. The significance of the decay length and the invariant mass of charged tracks associated with the secondary vertex are used as discriminating variables to distinguish between signal and background. Differential cross sections of jet production in charm and beauty events as a function of Q{sup 2}, y, E{sup jet}{sub T} and {eta}{sup jet} are measured. Results are compared to Next-to-Leading Order (NLO) predictions from Quantum Chromodynamics (QCD) in the fixed flavour number scheme. Good agreement between data and theory is observed. Contributions of the charm and beauty production to the inclusive proton structure function, F{sup cbar} {sup c}{sub 2} and F{sup b} {sup anti} {sup b}{sub 2}, are determined by extrapolating the double differential cross sections using NLO QCD predictions. Contributions to the test beam program for the Insertable B-Layer upgrade project of the ATLAS pixel detector are discussed. The test beam data analysis software package EUTelescope was extended, which allowed an efficient analysis of ATLAS pixel sensors. The USBPix DAQ system was integrated into the EUDET telescope allowing test beam

  15. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mathes, Markus

    2008-12-15

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  16. Investigation of Properties of Novel Silicon Pixel Assemblies Employing Thin n-in-p Sensors and 3D-Integration

    CERN Document Server

    Weigell, Philipp

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300/fb¹ , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running|especially if the luminosity is raised to about 5x10^35/(cm²s¹ ) as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost-effective pixel assemblies with...

  17. Pixel Experiments

    DEFF Research Database (Denmark)

    Petersen, Kjell Yngve; Søndergaard, Karin; Augustesen, Christina

    2015-01-01

    elucidate and exemplify already well-known problems in relation to the experience of vertical and horizontal lighting. Pixel Experiments exist as a synergy between speculative test setups and lighting design in practice. This book is one of four books that is published in connection with the research...... design it became relevant to investigate the use of LEDs as the physical equivalent of a pixel as a design approach. In this book our interest has been in identifying how the qualities of LEDs can be used in lighting applications. With experiences in the planning and implementation of architectural...... lighting design in practice, one quickly experiences and realises that there are untapped potentials in the attributes of LED technology. In this research, speculative studies have been made working with the attributes of LEDs in architectural contexts, with the ambition to ascertain new strategies...

  18. Pixel detectors

    CERN Document Server

    Passmore, M S

    2001-01-01

    positions on the detector. The loss of secondary electrons follows the profile of the detector and increases with higher energy ions. studies of the spatial resolution predict a value of 5.3 lp/mm. The image noise in photon counting systems is investigated theoretically and experimentally and is shown to be given by Poisson statistics. The rate capability of the LAD1 was measured to be 250 kHz per pixel. Theoretical and experimental studies of the difference in contrast for ideal charge integrating and photon counting imaging systems were carried out. It is shown that the contrast differs and that for the conventional definition (contrast = (background - signal)/background) the photon counting device will, in some cases, always give a better contrast than the integrating system. Simulations in MEDICI are combined with analytical calculations to investigate charge collection efficiencies (CCE) in semiconductor detectors. Different pixel sizes and biasing conditions are considered. The results show charge shari...

  19. Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

    Science.gov (United States)

    Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Liang, Albert K; Zhao, Qihua

    2017-07-01

    Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000 e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20 × 20 cm 2 , 150 μm pitch array operated at 30 fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including

  20. Development of SERS active fibre sensors

    CERN Document Server

    Polwart, E

    2002-01-01

    Surface-enhanced Raman scattering (SERS) is sensitive and selective and when coupled with fibre-optics could potentially produce an effective chemical sensing system. This thesis concerns the development of a single-fibre-based sensor, with an integral SERS-active substrate. A number of different methods for the manufacture of SERS-active surfaces on glass substrates were investigated and compared. The immobilisation of metal nanoparticles on glass functionalised with (3-aminopropyl)trimethoxysilane emerged as a suitable approach for the production of sensors. Substrates prepared by this approach were characterised using UV-visible spectroscopy, electron microscopy and Raman mapping. It was found that exposure of substrates to laser radiation led to a decrease in the signal recorded from adsorbed analytes. This speed of the decrease was shown to depend on the analyte, and the exciting wavelength and power. SERS-active fibre sensors were produced by immobilisation of silver nanoparticles at the distal end of a...

  1. Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

    Science.gov (United States)

    Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

    2017-03-01

    In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

  2. The Datura Pixel Beam Telescope - Setup and first results

    Energy Technology Data Exchange (ETDEWEB)

    Eckstein, Doris; Eichhorn, Thomas; Gregor, Ingrid-Maria; Rubinskiy, Igor; Perrey, Hanno [DESY (Germany)

    2013-07-01

    The Datura pixel telescope is an upgraded version of the original Eudet beam telescope. It consists of six planes of Mimosa 26 monolithic active pixel sensors, mounted on two lever arms with three planes each. The sensor positioning is flexible and there is the possibility of including a central device under test (DUT). With the telescope, a pointing precision of under 3 μm at the DUT can be achieved. Cooling of sensors and DUT, positioning and read-out infrastructure are included. The telescope provides a flexible and general purpose testing environment for various sensor technologies. In this talk telescope resolution measurements at the low energy DESY e{sup +}/e{sup -} test beam are presented.

  3. ATLAS ITk Pixel detector

    CERN Document Server

    Gemme, Claudia; The ATLAS collaboration

    2016-01-01

    The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenge to the ATLAS tracker. The current inner detector will be replaced with a whole silicon tracker which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation level are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the HL-LHC ATLA Pixel detector developments as well as the various layout options will be reviewed.

  4. Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

    CERN Document Server

    AUTHOR|(SzGeCERN)734627; Benoit, Mathieu; Dannheim, Dominik; Dette, Karola; Hynds, Daniel; Kulis, Szymon; Peric, Ivan; Petric, Marko; Redford, Sophie; Sicking, Eva; Valerio, Pierpaolo

    2016-01-01

    The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor. Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

  5. Functionalized active-nucleus complex sensor

    Science.gov (United States)

    Pines, Alexander; Wemmer, David E.; Spence, Megan; Rubin, Seth

    2003-11-25

    A functionalized active-nucleus complex sensor that selectively associates with one or more target species, and a method for assaying and screening for one or a plurality of target species utilizing one or a plurality of functionalized active-nucleus complexes with at least two of the functionalized active-nucleus complexes having an attraction affinity to different corresponding target species. The functionalized active-nucleus complex has an active-nucleus and a targeting carrier. The method involves functionalizing an active-nucleus, for each functionalized active-nucleus complex, by incorporating the active-nucleus into a macromolucular or molecular complex that is capable of binding one of the target species and then bringing the macromolecular or molecular complexes into contact with the target species and detecting the occurrence of or change in a nuclear magnetic resonance signal from each of the active-nuclei in each of the functionalized active-nucleus complexes.

  6. PIXELS: Using field-based learning to investigate students' concepts of pixels and sense of scale

    Science.gov (United States)

    Pope, A.; Tinigin, L.; Petcovic, H. L.; Ormand, C. J.; LaDue, N.

    2015-12-01

    Empirical work over the past decade supports the notion that a high level of spatial thinking skill is critical to success in the geosciences. Spatial thinking incorporates a host of sub-skills such as mentally rotating an object, imagining the inside of a 3D object based on outside patterns, unfolding a landscape, and disembedding critical patterns from background noise. In this study, we focus on sense of scale, which refers to how an individual quantified space, and is thought to develop through kinesthetic experiences. Remote sensing data are increasingly being used for wide-reaching and high impact research. A sense of scale is critical to many areas of the geosciences, including understanding and interpreting remotely sensed imagery. In this exploratory study, students (N=17) attending the Juneau Icefield Research Program participated in a 3-hour exercise designed to study how a field-based activity might impact their sense of scale and their conceptions of pixels in remotely sensed imagery. Prior to the activity, students had an introductory remote sensing lecture and completed the Sense of Scale inventory. Students walked and/or skied the perimeter of several pixel types, including a 1 m square (representing a WorldView sensor's pixel), a 30 m square (a Landsat pixel) and a 500 m square (a MODIS pixel). The group took reflectance measurements using a field radiometer as they physically traced out the pixel. The exercise was repeated in two different areas, one with homogenous reflectance, and another with heterogeneous reflectance. After the exercise, students again completed the Sense of Scale instrument and a demographic survey. This presentation will share the effects and efficacy of the field-based intervention to teach remote sensing concepts and to investigate potential relationships between students' concepts of pixels and sense of scale.

  7. Comparison of relevant parameters of multi-pixel sensors for tracker detectors after irradiation with high proton and neutron fluences; Vergleich relevanter Parameter von Multipixelsensoren fuer Spurdetektoren nach Bestrahlung mit hohen Proton- und Neutronfluessen

    Energy Technology Data Exchange (ETDEWEB)

    Bergholz, Matthias

    2016-03-15

    The further increase of the luminosity of the Large Hadron Collider (LHC) at CERN requires new sensors for the tracking detector of the Compact Muon Soleniod (CMS) experiment. These sensors must be more radiation hard and of a finer granularity to lower the occupancy. In addition the new sensor modules must have a lower material budget and have to be self triggering. Sensor prototypes, the so called ''MPix''-sensors, produced on different materials were investigated for their radiation hardness. These sensors were fully characterized before and after irradiation. Of particular interest was the comparison of different bias methods, different materials and the influence of various geometries. The degeneration rate differs for the different sensor materials. The increase of the dark current of Float-Zone-Silicon is stronger for thicker sensors and less than for Magnetic-Czochralski-Silicon sensors. Both tested bias structures are damaged by the irradiation. The poly silicon resistance increases after irradiation by fifty percent. The Punch-Through-Structure is more effected by irradiation. The punch-through voltage increase by a factor of two. Due to the higher pixel current, the working point of the sensor is shifted to smaller differential resistances.

  8. Electrical simulation of a DEPFET pixel matrix

    Energy Technology Data Exchange (ETDEWEB)

    Koffmane, Christian; Moser, Hans-Guenther; Ninkovic, Jelena; Richter, Rainer; Wassatsch, Andreas [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: DEPFET-Collaboration

    2011-07-01

    The Belle II experiment will use two layers of pixel detectors to achieve a good vertex resolution. The two layers will consist of 40 pixel sensors each with roughly 190.000 DEPFET pixels to provide the necessary spatial resolution. In addition to the array of DEPFET pixels steering and read-out ASICs are bump bonded on the pixel sensor. The high luminosity of the Belle-II experiment requires a fast and parallel read-out. The pixel sensor will be read-out in rolling shutter-mode with a row read-out time of 100 ns and a frame time of 20 {mu}s. To find design solutions which allow such short read-out times simulations and measurements of prototypes are performed. The electrical simulations incorporating the ASICs and DEPFET pixel array allow early investigations on the interaction between the chips and the pixel array e.g. the pixel output signal depending on the position of the pixel within the array. In the following a model describing the DEPFETs intrinsic properties like the MOS-FET characteristic, the internal amplification and the reset mechanism as well as parasitic resistive and capacitive elements is presented and simulation results are discussed.

  9. A Method To Determine Validity And Reliability Of Activity Sensors

    NARCIS (Netherlands)

    Boerema, Simone Theresa; Hermens, Hermanus J.

    2011-01-01

    Accelerometry-based activity sensors are nowadays widely deployed in ambulatory monitoring of physical activity. Field experiments are characterized by very little control over usage of the sensor [1]. A malfunctioning sensor, giving output within the range of normal physical activity, will not be

  10. The First Monolithic Silicon Carbide Active Pixel Sensor Array for Solar Blind UV Detection Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project will address the needs of space astronomy, military threat detection, and scientific research for image...

  11. The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

  12. The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

  13. Silicon pixel R&D for CLIC

    CERN Document Server

    AUTHOR|(SzGeCERN)754303

    2016-01-01

    Challenging detector requirements are imposed by the physics goals at the future multi-TeV e+e- Compact Linear Collider (CLIC). A single point resolution of 3μm for the vertex detector and 7μm for the tracker is required. Moreover, the CLIC vertex detector and tracker need to be extremely light weighted with a material budget of 0.2 % X0 per layer in the ver- tex detector and 1-2%X0 in the tracker. A fast time slicing of 10ns is further required to suppress background from beam-beam interactions. A wide range of sensor and readout ASIC technologies are investigated within the CLIC silicon pixel R&D effort. Various hybrid planar sensor assemblies with a pixel size of 25x25μm2 and 55x55μm2 have been produced and characterised by laboratory measurements and during test-beam campaigns. Experimental and simulation results for thin (50μm-500μm) slim edge and active-edge planar, and High-Voltage CMOS sensors hybridised to various readout ASICs (Timepix, Timepix3, CLICpix) are presented.

  14. Physical Human Activity Recognition Using Wearable Sensors

    Directory of Open Access Journals (Sweden)

    Ferhat Attal

    2015-12-01

    Full Text Available This paper presents a review of different classification techniques used to recognize human activities from wearable inertial sensor data. Three inertial sensor units were used in this study and were worn by healthy subjects at key points of upper/lower body limbs (chest, right thigh and left ankle. Three main steps describe the activity recognition process: sensors’ placement, data pre-processing and data classification. Four supervised classification techniques namely, k-Nearest Neighbor (k-NN, Support Vector Machines (SVM, Gaussian Mixture Models (GMM, and Random Forest (RF as well as three unsupervised classification techniques namely, k-Means, Gaussian mixture models (GMM and Hidden Markov Model (HMM, are compared in terms of correct classification rate, F-measure, recall, precision, and specificity. Raw data and extracted features are used separately as inputs of each classifier. The feature selection is performed using a wrapper approach based on the RF algorithm. Based on our experiments, the results obtained show that the k-NN classifier provides the best performance compared to other supervised classification algorithms, whereas the HMM classifier is the one that gives the best results among unsupervised classification algorithms. This comparison highlights which approach gives better performance in both supervised and unsupervised contexts. It should be noted that the obtained results are limited to the context of this study, which concerns the classification of the main daily living human activities using three wearable accelerometers placed at the chest, right shank and left ankle of the subject.

  15. Physical Human Activity Recognition Using Wearable Sensors

    Science.gov (United States)

    Attal, Ferhat; Mohammed, Samer; Dedabrishvili, Mariam; Chamroukhi, Faicel; Oukhellou, Latifa; Amirat, Yacine

    2015-01-01

    This paper presents a review of different classification techniques used to recognize human activities from wearable inertial sensor data. Three inertial sensor units were used in this study and were worn by healthy subjects at key points of upper/lower body limbs (chest, right thigh and left ankle). Three main steps describe the activity recognition process: sensors’ placement, data pre-processing and data classification. Four supervised classification techniques namely, k-Nearest Neighbor (k-NN), Support Vector Machines (SVM), Gaussian Mixture Models (GMM), and Random Forest (RF) as well as three unsupervised classification techniques namely, k-Means, Gaussian mixture models (GMM) and Hidden Markov Model (HMM), are compared in terms of correct classification rate, F-measure, recall, precision, and specificity. Raw data and extracted features are used separately as inputs of each classifier. The feature selection is performed using a wrapper approach based on the RF algorithm. Based on our experiments, the results obtained show that the k-NN classifier provides the best performance compared to other supervised classification algorithms, whereas the HMM classifier is the one that gives the best results among unsupervised classification algorithms. This comparison highlights which approach gives better performance in both supervised and unsupervised contexts. It should be noted that the obtained results are limited to the context of this study, which concerns the classification of the main daily living human activities using three wearable accelerometers placed at the chest, right shank and left ankle of the subject. PMID:26690450

  16. Active Sensor Configuration Validation for Refrigeration Systems

    DEFF Research Database (Denmark)

    Hovgaard, Tobias Gybel; Blanke, Mogens; Niemann, Hans Henrik

    2010-01-01

    Major faults in the commissioning phase of refrigeration systems are caused by defects related to sensors. With a number of similar sensors available that do not differ by type but only by spatial location in the plant, interchange of sensors is a common defect. With sensors being used quite...... identify the sensor configuration. The method as such is generic and is shown in the paper to work convincingly on refrigeration systems with significant nonlinear behaviors...

  17. Module and Electronics Developments for the ATLAS ITK Pixel System

    CERN Document Server

    Nellist, Clara; The ATLAS collaboration

    2016-01-01

    ATLAS is preparing for an extensive modification of its detector in the course of the planned HL-LHC accelerator upgrade around 2025 which includes a replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will comprise of a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m$^{2}$, depending on the final layout choice that is expected to take place in early 2017. An intense R\\&D activity is taking place in the field of planar, 3D, CMOS sensors to identify the optimal technology for the different pixel layers. In parallel various sensor-chip interconnection options are explored to identify reliable technologies when employing 100-150~$\\mu$m thin chips. While the new read-out chip is being developed by the RD53 Collaboration, the pixel off de...

  18. Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

    CERN Document Server

    Mathes, Markus

    2008-01-01

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection ...

  19. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

  20. A method to determine validity and reliability of activity sensors

    NARCIS (Netherlands)

    Boerema, Simone Theresa; Hermens, Hermanus J.

    2013-01-01

    METHOD Four sensors were securely fastened to a mechanical oscillator (Vibration Exciter, type 4809, Brüel & Kjær) and moved at various frequencies (6.67Hz; 13.45Hz; 19.88Hz) within the range of human physical activity. For each of the three sensor axes, the sensors were simultaneously moved for

  1. Investigation of Toshiba 130nm CMOS process as a possible candidate for active silicon sensors in HEP and X-ray experiments

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Yunan; Hemperek, Tomasz; Kishishita, Testsuichi; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [University of Bonn, Bonn (Germany); Peric, Ivan [Karlsruhe Institute of Technology, Karlsruhe (Germany)

    2015-07-01

    Following the advances of commercial semiconductor manufacturing technologies there has recently been an increased interest within experimental physics community in applying CMOS manufacturing processes to developing active silicon sensors. Possibility of applying high voltage bias combined with high resistivity substrate allows for better depletion of sensor and therefore quicker and more efficient charge collection. One of processes that accommodates those features is Toshiba 130 nm CMOS technology (CMOS3E). Within our group a test chip was designed to examine the suitability of this technology for physics experiment (both for HEP and X-ray imaging). Design consisted of 4 pixel matrices with total of 12 different pixel flavors allowing for evaluation of various pixel geometries and architectures in terms of depletion depth, noise performance, charge collection efficiency, etc. During this talk initial outcome of this evaluation is presented, starting with brief introduction to technology itself, followed by results of TCAD simulations, description of final design and first measurements results.

  2. Pixel readout chip for the ATLAS experiment

    CERN Document Server

    Ackers, M; Blanquart, L; Bonzom, V; Comes, G; Fischer, P; Keil, M; Kühl, T; Meuser, S; Delpierre, P A; Treis, J; Raith, B A; Wermes, N

    1999-01-01

    Pixel detectors with a high granularity and a very large number of sensitive elements (cells) are a very recent development used for high precision particle detection. At the Large Hadron Collider LHC at CERN (Geneva) a pixel detector with 1.4*10/sup 8/ individual pixel cells is developed for the ATLAS detector. The concept is a hybrid detector. Consisting of a pixel sensor connected to a pixel electronics chip by bump and flip chip technology in one-to-one cell correspondence. The development and prototype results of the pixel front end chip are presented together with the physical and technical requirements to be met at LHC. Lab measurements are reported. (6 refs).

  3. Pixel electronics for the ATLAS experiment

    CERN Document Server

    Fischer, P

    2001-01-01

    The ATLAS experiment at LHC will use 3 barrel layers and 2*5 disks of silicon pixel detectors as the innermost elements of the semiconductor tracker. The basic building blocks are pixel modules with an active area of 16.4 mm*60.8 mm which include an n/sup +/ on n-type silicon sensor and 16 VLSI front-end (FE) chips. Every FE chip contains a low power, high speed charge sensitive preamplifier, a fast discriminator, and a readout system which operates at the 40 MHz rate of LHC. The addresses of hit pixels (as well as a low resolution pulse height information) are stored on the FE chips until arrival of a level 1 trigger signal. Hits are then transferred to a module controller chip (MCC) which collects the data of all 16 FE chips, builds complete events and sends the data through two optical links to the data acquisition system. The MCC receives clock and data through an additional optical link and provides timing and configuration information for the FE chips. Two additional chips are used to amplify and decode...

  4. Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

    Science.gov (United States)

    Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

    2013-01-01

    Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

  5. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Rubinskiy, I

    2015-01-01

    A high resolution (σ∼2μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. The telescope consists of six monolithic active pixel sensor planes (Mimosa26) with a pixel pitch of 18.4 \\mu m and thinned down to 50 \\mu m. The excellent resolution, readout rate and DAQ integration capabilities made the telescope a primary test beam tool for many groups including several CERN based experiments. Within the European detector infrastructure project AIDA the test beam telescope is being further extended in terms of cooling and powering infrastructure, read-out speed, area of acceptance, and precision. In order to provide a system optimized for the different requirements by the user community a combination of various state-of-the-art pixel technologies is foreseen. Furthermore, new central dead-time-free trigger logic unit (TLU) has been developed to provide LHC-speed response with one-trigger-per-particle operating mode and a synchronous clock for all conn...

  6. The Belle II DEPFET pixel detector

    Science.gov (United States)

    Moser, Hans-Günther

    2016-09-01

    The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55-60) μm in the first layer and between 50 μm×(70-85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the 'internal gate' modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X0). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO2 system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

  7. Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

    CERN Document Server

    Backhaus, M; The ATLAS collaboration

    2011-01-01

    For the ATLAS pixel detector, a fourth hybrid pixel detector layer known as Insertable B-Layer (IBL) is developed, which will be slid into the present pixel detector. Due to the very small distance to the interaction point of about 3.4 cm, the IBL will improve the track reconstruction and vertexing of the pixel detector. In order to handle the extreme particle flux and radiation damage close to the interaction point, new sensor concepts as well as a new readout chip, FE-I4, are currently developed. To reduce the pixel occupancy, the pixel size in FE-I4 is reduced from the 50 x 400 µm² of the readout chip of the current ATLAS pixel detector (FE-I3) to 50 x 250 µm². The FE-I4 active area will cover ~ 2 x 1.7 cm², resulting in 26.880, a nearly ten fold increase in pixel number with respect to FE-I3. This translates into an increased active over inactive area ratio of less than 75% in FE-I3 to 90% in FE-I4. This enables a better, more integrated module concept, with a smaller amount of periphery to achieve a...

  8. Characterisation of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

    CERN Document Server

    Backhaus, M; The ATLAS collaboration

    2011-01-01

    For the ATLAS pixel detector, a fourth hybrid pixel detector layer known as Insertable B-Layer (IBL) is developed, which will be slid into the present pixel detector. Due to the very small distance to the interaction point of about 3.4 cm, the IBL will improve the track reconstruction and vertexing of the pixel detector. In order to handle the extreme particle flux and radiation damage close to the interaction point, new sensor concepts as well as a new readout chip, FE-I4, are currently developed. To reduce the pixel occupancy, the pixel size in FE-I4 is reduced from the 50 x 400 µm² of the readout chip of the current ATLAS pixel detector (FE-I3) to 50 x 250 µm². The FE-I4 active area will cover ~ 2 x 1.7 cm², resulting in 26.880, a nearly ten fold increase in pixel number with respect to FE-I3. This translates into an increased active over inactive area ratio of less than 75% in FE-I3 to 90% in FE-I4. This enables a better, more integrated module concept, with a smaller amount of periphery to achieve a...

  9. Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

    Science.gov (United States)

    Berdalovic, I.; Bates, R.; Buttar, C.; Cardella, R.; Egidos Plaja, N.; Hemperek, T.; Hiti, B.; van Hoorne, J. W.; Kugathasan, T.; Mandic, I.; Maneuski, D.; Marin Tobon, C. A.; Moustakas, K.; Musa, L.; Pernegger, H.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E. J.; Sharma, A.; Snoeys, W.; Solans Sanchez, C.; Wang, T.; Wermes, N.

    2018-01-01

    The upgrade of the ATLAS tracking detector (ITk) for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resistivity substrates with on-chip high-voltage biasing to achieve a large depleted active sensor volume. We have characterised depleted monolithic active pixel sensors (DMAPS), which were produced in a novel modified imaging process implemented in the TowerJazz 180 nm CMOS process in the framework of the monolithic sensor development for the ALICE experiment. Sensors fabricated in this modified process feature full depletion of the sensitive layer, a sensor capacitance of only a few fF and radiation tolerance up to 1015 neq/cm2. This paper summarises the measurements of charge collection properties in beam tests and in the laboratory using radioactive sources and edge TCT. The results of these measurements show significantly improved radiation hardness obtained for sensors manufactured using the modified process. This has opened the way to the design of two large scale demonstrators for the ATLAS ITk. To achieve a design compatible with the requirements of the outer pixel layers of the tracker, a charge sensitive front-end taking 500 nA from a 1.8 V supply is combined with a fast digital readout architecture. The low-power front-end with a 25 ns time resolution exploits the low sensor capacitance to reduce noise and analogue power, while the implemented readout architectures minimise power by reducing the digital activity.

  10. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Rubinskiy, I

    2015-01-01

    Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

  11. Module and electronics developments for the ATLAS ITK pixel system

    CERN Document Server

    Munoz Sanchez, Francisca Javiela; The ATLAS collaboration

    2017-01-01

    The ATLAS experiment is preparing for an extensive modification of its detectors in the course of the planned HL-LHC accelerator upgrade around 2025. The ATLAS upgrade includes the replacement of the entire tracking system by an all-silicon detector (Inner Tracker, ITk). The five innermost layers of ITk will be a pixel detector built of new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in 2017. In this paper an overview of the ongoing R\\&D activities on modules and electronics for the ATLAS ITk is given including the main developments and achievements in silicon planar and 3D sensor technologies, readout and power challenges.

  12. Wafer-scale pixelated detector system

    Energy Technology Data Exchange (ETDEWEB)

    Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

    2017-10-17

    A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

  13. Diamond pixel modules

    CERN Document Server

    Gan, K K; Robichaud, A; Potenza, R; Kuleshov, S; Kagan, H; Kass, R; Wermes, N; Dulinski, W; Eremin, V; Smith, S; Sopko, B; Olivero, P; Gorisek, A; Chren, D; Kramberger, G; Schnetzer, S; Weilhammer, P; Martemyanov, A; Hugging, F; Pernegger, H; Lagomarsino, S; Manfredotti, C; Mishina, M; Trischuk, W; Dobos, D; Cindro, V; Belyaev, V; Duris, J; Claus, G; Wallny, R; Furgeri, A; Tuve, C; Goldstein, J; Sciortino, S; Sutera, C; Asner, D; Mikuz, M; Lo Giudice, A; Velthuis, J; Hits, D; Griesmayer, E; Oakham, G; Frais-Kolbl, H; Bellini, V; D'Alessandro, R; Cristinziani, M; Barbero, M; Schaffner, D; Costa, S; Goffe, M; La Rosa, A; Bruzzi, M; Schreiner, T; de Boer, W; Parrini, G; Roe, S; Randrianarivony, K; Dolenc, I; Moss, J; Brom, J M; Golubev, A; Mathes, M; Eusebi, R; Grigoriev, E; Tsung, J W; Mueller, S; Mandic, I; Stone, R; Menichelli, D

    2011-01-01

    With the commissioning of the LHC in 2010 and upgrades expected in 2015, ATLAS and CMS are planning to upgrade their innermost tracking layers with radiation hard technologies. Chemical Vapor Deposition diamond has been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle, CDF and all LHC experiments. This material is now being considered as a sensor material for use very close to the interaction region where the most extreme radiation conditions exist Recently the RD42 collaboration constructed, irradiated and tested polycrystalline and single-crystal chemical vapor deposition diamond sensors to the highest fluences expected at the super-LHC. We present beam test results of chemical vapor deposition diamond up to fluences of 1.8 x 10(16) protons/cm(2) illustrating that both polycrystalline and single-crystal chemical vapor deposition diamonds follow a single damage curve. We also present beam test results of irradiated complete diamond pixel m...

  14. Active pixel and photon counting imagers based on poly-Si TFTs: rewriting the rule book on large area flat panel x-ray devices

    Science.gov (United States)

    Antonuk, Larry E.; Koniczek, Martin; El-Mohri, Youcef; Zhao, Qihua

    2009-02-01

    The near-ubiquity of large area, active matrix, flat-panel imagers (AMFPIs) in medical x-ray imaging applications is a testament to the usefulness and adaptability of the relatively simple concept of array pixels based on a single amorphous silicon (a-Si:H) TFT coupled to a pixel storage capacitor. Interestingly, the fundamental advantages of a-Si:H thin film electronics (including compatibility with very large area processing, high radiation damage resistance, and continued development driven by interest in mainstream consumer products) are shared by the rapidly advancing technology of polycrystalline silicon (poly-Si) TFTs. Moreover, the far higher mobilities of poly-Si TFTs, compared to those of a- Si:H, facilitate the creation of faster and more complex circuits than are possible with a-Si:H TFTs, leading to the possibility of new classes of large area, flat panel imagers. Given recent progress in the development of initial poly-Si imager prototypes, the creation of increasingly sophisticated active pixel arrays offering pixel-level amplification, variable gain, very high frame rates, and excellent signal-to-noise performance under all fluoroscopic and radiographic conditions (including very low exposures and high spatial frequencies), appears within reach. In addition, it is conceivable that the properties of poly-Si TFTs could allow the development of large area imagers providing single xray photon counting capabilities. In this article, the factors driving the possible realization of clinically practical active pixel and photon counting imagers based on poly-Si TFTs are described and simple calculational estimates related to photon counting imagers are presented. Finally, the prospect for future development of such imagers is discussed.

  15. An EUDET/AIDA Pixel Beam Telescope for Detector Development

    CERN Document Server

    Perrey, Hanno

    2013-01-01

    A high resolution ($\\sigma 2 \\sim \\mu$) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. The telescope consists of six sensor planes using Mimosa26 MAPS with a pixel pitch of $18.4 \\mu$ and thinned down to $50 \\mu$. The excellent resolution, readout rate and DAQ integration capabilities made the telescope a primary test beam tool for many groups including several CERN based experiments. Within the new European detector infrastructure project AIDA the test beam telescope will be further extended in terms of cooling infrastructure, readout speed and precision. In order to provide a system optimized for the different requirements by the user community, a combination of various pixel technologies is foreseen. In this report the design of this even more flexible telescope with three different pixel technologies (TimePix, Mimosa, ATLAS FE-I4) will be presented. First test beam results with the HitOR signal provided by the FE-I4 integrated into the trigger...

  16. Resource Discovery in Activity-Based Sensor Networks

    DEFF Research Database (Denmark)

    Bucur, Doina; Bardram, Jakob

    This paper proposes a service discovery protocol for sensor networks that is specifically tailored for use in humancentered pervasive environments. It uses the high-level concept of computational activities (as logical bundles of data and resources) to give sensors in Activity-Based Sensor Networks...... (ABSNs) knowledge about their usage even at the network layer. ABSN redesigns classical network-level service discovery protocols to include and use this logical structuring of the network for a more practically applicable service discovery scheme. Noting that in practical settings activity-based sensor...... patches are localized, ABSN designs a completely distributed, hybrid discovery protocol which is proactive in a neighbourhood zone and reactive outside, tailored so that any query among the sensors of one activity is routed through the network with minimum overhead, guided by the bounds of that activity...

  17. On Endmember Identification in Hyperspectral Images Without Pure Pixels: A Comparison of Algorithms

    NARCIS (Netherlands)

    Plaza, J.; Hendrix, E.M.T.; García, I.; Martín, G.; Plaza, A.

    2012-01-01

    Hyperspectral imaging is an active area of research in Earth and planetary observation. One of the most important techniques for analyzing hyperspectral images is spectral unmixing, in which mixed pixels (resulting from insufficient spatial resolution of the imaging sensor) are decomposed into a

  18. The INFN-FBK pixel R&D program for HL-LHC

    Science.gov (United States)

    Meschini, M.; Dalla Betta, G. F.; Boscardin, M.; Calderini, G.; Darbo, G.; Giacomini, G.; Messineo, A.; Ronchin, S.

    2016-09-01

    We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

  19. The INFN-FBK pixel R&D program for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Meschini, M., E-mail: marco.meschini@cern.ch [INFN Sezione di Firenze, Sesto Fiorentino (Italy); Dalla Betta, G.F. [Università di Trento, Dipartimento di Ingegneria Industriale, Trento (Italy); TIFPA INFN, Trento (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), Trento (Italy); TIFPA INFN, Trento (Italy); Calderini, G. [Laboratoire de Physique Nucleaire et de Hautes Énergies (LPNHE), Paris (France); Darbo, G. [INFN Sezione di Genova, Genova (Italy); Giacomini, G. [Fondazione Bruno Kessler (FBK), Trento (Italy); Messineo, A. [Università di Pisa, Dipartimento di Fisica, Pisa (Italy); INFN, Pisa (Italy); Ronchin, S. [Fondazione Bruno Kessler (FBK), Trento (Italy)

    2016-09-21

    We report on the ATLAS and CMS joint research activity, which is aiming at the development of new, thin silicon pixel detectors for the Large Hadron Collider Phase-2 detector upgrades. This R&D is performed under special agreement between Istituto Nazionale di Fisica Nucleare and FBK foundation (Trento, Italy). New generations of 3D and planar pixel sensors with active edges are being developed in the R&D project, and will be fabricated at FBK. A first planar pixel batch, which was produced by the end of year 2014, will be described in this paper. First clean room measurement results on planar sensors obtained before and after neutron irradiation will be presented.

  20. Active polymer materials for optical fiber CO2 sensors

    Science.gov (United States)

    Wysokiński, Karol; Filipowicz, Marta; Stańczyk, Tomasz; Lipiński, Stanisław; Napierała, Marek; Murawski, Michał; Nasiłowski, Tomasz

    2017-04-01

    CO2 optical fiber sensors based on polymer active materials are presented in this paper. Ethyl cellulose was proven to be a good candidate for a matrix material of the sensor, since it gives porous, thick and very sensitive layers. Low-cost sensors based on polymer optical fibers have been elaborated. Sensors have been examined for their sensitivity to CO2, temperature and humidity. Response time during cyclic exposures to CO2 have been also determined. Special layers exhibiting irreversible change of color during exposure to carbon dioxide have been developed. They have been verified for a possible use in smart food packaging.

  1. Initial Measurements on Pixel Detector Modules for the ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Delicate conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel Detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming Pixel Detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation for silicon planar and 3D pixel sensors, which give a first impression on the charge collection properties of the different sensor technologies, are presented.

  2. The ALICE pixel detector

    CERN Document Server

    Mercado Perez, J

    2002-01-01

    The present document is a brief summary of the performed activities during the 2001 Summer Student Programme at CERN under the Scientific Summer at Foreign Laboratories Program organized by the Particles and Fields Division of the Mexican Physical Society (Sociedad Mexicana de Fisica). In this case, the activities were related with the ALICE Pixel Group of the EP-AIT Division, under the supervision of Jeroen van Hunen, research fellow in this group. First, I give an introduction and overview to the ALICE experiment; followed by a description of wafer probing. A brief summary of the test beam that we had from July 13th to July 25th is given as well. (3 refs).

  3. Pulse-driven magnetoimpedance sensor detection of cardiac magnetic activity.

    Directory of Open Access Journals (Sweden)

    Shinsuke Nakayama

    Full Text Available This study sought to establish a convenient method for detecting biomagnetic activity in the heart. Electrical activity of the heart simultaneously induces a magnetic field. Detection of this magnetic activity will enable non-contact, noninvasive evaluation to be made. We improved the sensitivity of a pulse-driven magnetoimpedance (PMI sensor, which is used as an electric compass in mobile phones and as a motion sensor of the operation handle in computer games, toward a pico-Tesla (pT level, and measured magnetic fields on the surface of the thoracic wall in humans. The changes in magnetic field detected by this sensor synchronized with the electric activity of the electrocardiogram (ECG. The shape of the magnetic wave was largely altered by shifting the sensor position within 20 mm in parallel and/or perpendicular to the thoracic wall. The magnetic activity was maximal in the 4th intercostals near the center of the sterna. Furthermore, averaging the magnetic activity at 15 mm in the distance between the thoracic wall and the sensor demonstrated magnetic waves mimicking the P wave and QRS complex. The present study shows the application of PMI sensor in detecting cardiac magnetic activity in several healthy subjects, and suggests future applications of this technology in medicine and biology.

  4. Recognizing Multi-user Activities using Body Sensor Networks

    DEFF Research Database (Denmark)

    Gu, Tao; Wang, Liang; Chen, Hanhua

    2011-01-01

    activity classes of data—for building activity models and design a scalable, noise-resistant, Emerging Pattern based Multi-user Activity Recognizer (epMAR) to recognize both single- and multi-user activities. We develop a multi-modal, wireless body sensor network for collecting real-world traces in a smart...

  5. The Sandia MEMS passive shock sensor : FY07 maturation activities.

    Energy Technology Data Exchange (ETDEWEB)

    Houston, Jack E.; Blecke, Jill; Mitchell, John Anthony; Wittwer, Jonathan W.; Crowson, Douglas A.; Clemens, Rebecca C.; Walraven, Jeremy Allen; Epp, David S.; Baker, Michael Sean

    2008-08-01

    This report describes activities conducted in FY07 to mature the MEMS passive shock sensor. The first chapter of the report provides motivation and background on activities that are described in detail in later chapters. The second chapter discusses concepts that are important for integrating the MEMS passive shock sensor into a system. Following these two introductory chapters, the report details modeling and design efforts, packaging, failure analysis and testing and validation. At the end of FY07, the MEMS passive shock sensor was at TRL 4.

  6. Human psychophysiological activity monitoring methods using fiber optic sensors

    Science.gov (United States)

    Zyczkowski, M.; Uzieblo-Zyczkowska, B.

    2010-10-01

    The paper presents the concept of fiber optic sensor system for human psycho-physical activity detection. A fiber optic sensor that utilizes optical phase interferometry or intensity in modalmetric to monitor a patient's vital signs such as respiration cardiac activity, blood pressure and body's physical movements. The sensor, which is non-invasive, comprises an optical fiber interferometer that includes an optical fiber proximately situated to the patient so that time varying acusto-mechanical signals from the patient are coupled into the optical fiber. The system can be implemented in embodiments ranging form a low cost in-home to a high end product for in hospital use.

  7. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Risti{c}, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  8. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Gaudiello, Andrea; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  9. Molecular detection by active Fano-sensor

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Yifei; Guo, Zhongyi [School of Computer and Information, Hefei University of Technology, Hefei, 230009 (China)

    2017-04-15

    The optical properties and sensing performances of the molecular sensors based on plasmonic Fano-resonance (PFR) nanostructures have been numerically investigated in detail. The on-resonance sensor, in which the Fano-resonance position is overlapping with the absorption-band of the detected molecules perfectly, reveals a powerful ability to detect the molecules with a low concentration or thin thickness. By the bias-modulation of a single-layer graphene, the Fano-resonance position of the nanostructures can be tuned effectively. On being modulated properly, the PFR sensor shows an ultrahigh performance because of the unprecedentedly high overlap of the Fano-resonance position with the absorption-band of molecules, which is enabling superior signal strength in the molecular detections based on their vibrational fingerprints. Our proposed strategy may enable the development of dynamic sensors and open exciting prospects for bio-sensing. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. A Novel LTPS-TFT Pixel Circuit to Compensate the Electronic Degradation for Active-Matrix Organic Light-Emitting Diode Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2013-01-01

    Full Text Available A novel pixel driving circuit for active-matrix organic light-emitting diode (AMOLED displays with low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs is studied. The proposed compensation pixel circuit is driven by voltage programming scheme, which is composed of five TFTs and one capacitor, and has been certified to provide uniform output current by the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The results of simulation show excellent performance, such as the low average error rate of OLED current variation (<0.5% and the low average nonuniformity of OLED current variation (<0.8% while the shift of threshold voltage of the driving poly-Si TFT and the OLED are both in the worst case ( V for TFT and  V for OLED. The proposed pixel circuit shows high immunity to the threshold voltage deviation of both the driving poly-Si TFT and the OLED.

  11. ATLAS rewards two pixel detector suppliers

    CERN Multimedia

    2007-01-01

    Peter Jenni, ATLAS spokesperson, presented the ATLAS supplier award to Herbert Reichl, IZM director, and to Simonetta Di Gioia, from the SELEX company.Two of ATLAS’ suppliers were awarded prizes at a ceremony on Wednesday 13 June attended by representatives of the experiment’s management and of CERN. The prizes went to the Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (IZM) in Berlin and the company SELEX Sistemi Integrati in Rome for the manufacture of modules for the ATLAS pixel detector. SELEX supplied 1500 of the modules for the tracker, while IZM produced a further 1300. The modules, each made up of 46080 channels, form the active part of the ATLAS pixel detector. IZM and SELEX received the awards for the excellent quality of their work: the average number of faulty channels per module was less than 2.10-3. They also stayed within budget and on schedule. The difficulty they faced was designing modules based on electronic components and sensor...

  12. Developing sensor activity relationships for the JPL electronic nose sensors using molecular modeling and QSAR techniques

    Science.gov (United States)

    Shevade, A. V.; Ryan, M. A.; Homer, M. L.; Jewell, A. D.; Zhou, H.; Manatt, K.; Kisor, A. K.

    2005-01-01

    We report a Quantitative Structure-Activity Relationships (QSAR) study using Genetic Function Approximations (GFA) to describe the polymer-carbon composite sensor activities in the JPL Electronic Nose, when exposed to chemical vapors at parts-per-million concentration levels.

  13. Electro-active material (EAM) based bend sensors

    Science.gov (United States)

    LaComb, Ronald; LaComb, Julie

    2010-04-01

    The capability to accurately estimate strain and orientation of cables in an undersea environment is important for a multitude of applications. One way to estimate the positional location of a submersed cable is to utilize a network of distributed bend sensors providing inputs to a curve fitting algorithm. In this work commercially available bend sensors are characterized for small deflections. In addition proto-type devices are presented which can potentially improve device sensitivity. Commercially available bend sensors are based upon electro-active materials and variable resistance materials. Electro-active materials (EAM) are known for their actuator functionality but certain EAMs are capable of sensing as well. New advances in materials such as Ionic Polymer Metal Composites (IPMC) are proving suitable for quasi-static sensor applications. These sensors are low power, conformal and produce directionally dependent output voltages which are linearly proportional to deflection, with voltage polarity representative of the deflection direction. IPMCs are capable of being morphed for increased sensitivity. Variable resistivity sensors are based on smart epoxy polymer and carbon loaded inks. These sensors are inexpensive and conformal and unlike EAMs provide static measurements.

  14. Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

    CERN Document Server

    Savic, Natascha

    2016-01-01

    In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more ra- diation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 {\\mu}m recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of th...

  15. Electrical characteristics of silicon pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Gorelov, I.; Gorfine, G.; Hoeferkamp, M.; Mata-Bruni, V.; Santistevan, G.; Seidel, S.C. E-mail: seidel@dot.phys.unm.edu; Ciocio, A.; Einsweiler, K.; Emes, J.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Marchesini, R.; McCormack, F.; Milgrome, O.; Palaio, N.; Pengg, F.; Richardson, J.; Zizka, G.; Ackers, M.; Comes, G.; Fischer, P.; Keil, M.; Martinez, G.; Peric, I.; Runolfsson, O.; Stockmanns, T.; Treis, J.; Wermes, N.; Goessling, C.; Huegging, F.; Klaiber-Lodewigs, J.; Krasel, O.; Wuestenfeld, J.; Wunstorf, R.; Barberis, D.; Beccherle, R.; Caso, C.; Cervetto, M.; Darbo, G.; Gagliardi, G.; Gemme, C.; Morettini, P.; Netchaeva, P.; Osculati, B.; Rossi, L.; Charles, E.; Fasching, D.; Blanquart, L.; Breugnon, P.; Calvet, D.; Clemens, J.-C.; Delpierre, P.; Hallewell, G.; Laugier, D.; Mouthuy, T.; Rozanov, A.; Valin, I.; Andreazza, A.; Caccia, M.; Citterio, M.; Lari, T.; Meroni, C.; Ragusa, F.; Troncon, C.; Vegni, G.; Lutz, G.; Richter, R.H.; Rohe, T.; Boyd, G.R.; Skubic, P.L.; Sicho, P.; Tomasek, L.; Vrba, V.; Holder, M.; Ziolkowski, M.; Cauz, D.; Cobal-Grassmann, M.; D' Auria, S.; De Lotto, B.; Del Papa, C.; Grassmann, H.; Santi, L.; Becks, K.H.; Lenzen, G.; Linder, C

    2002-08-21

    Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

  16. Production chain of CMS pixel modules

    CERN Multimedia

    2006-01-01

    The pictures show the production chain of pixel modules for the CMS detector. Fig.1: overview of the assembly procedure. Fig.2: bump bonding with ReadOut Chip (ROC) connected to the sensor. Fig.3: glueing a raw module onto the baseplate strips. Fig.4: glueing of the High Density Interconnect (HDI) onto a raw module. Fig.5: pull test after heat reflow. Fig.6: wafer sensor processing, Indium evaporation.

  17. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The bump-bonded silicon pixel detector, developed at CERN by the EP-MIC group, is shown here in its ceramic carrier. Both represent the ISPA-tube anode. The chip features between 1024 (called OMEGA-1) and 8196 (ALICE-1) active pixels.

  18. Finite-element simulations of coupling capacitances in capacitively coupled pixel detectors

    CERN Document Server

    AUTHOR|(SzGeCERN)755510

    2017-01-01

    Capacitively coupled hybrid silicon pixel-detector assemblies are under study for the vertex detector at the proposed future CLIC linear electron-positron collider. The assemblies consist of active CCPDv3 sensors, with 25 μm pixel pitch implemented in a 180 nm High- Voltage CMOS process, which are glued to the CLICpix readout ASIC, with the same pixel pitch and processed in a commercial 65 nm CMOS technology. The signal created in the silicon bulk of the active sensors passes a two-stage amplifier, in each pixel, and gets transferred as a voltage pulse to metal pads facing the readout chip (ROC). The coupling of the signal to the metal pads on the ROC side proceeds through the capacitors formed between the two chips by a thin layer of epoxy glue. The coupling strength and the amount of unwanted cross coupling to neighbouring pixels depends critically on the uniformity of the glue layer, its thickness and on the alignment precision during the flip-chip assembly process. Finite-element calculations of the coup...

  19. The INFN R\\&D: new pixel detector for the High Luminosity Upgrade of the LHC

    CERN Document Server

    Dinardo, Mauro

    2017-01-01

    The High Luminosity upgrade of the CERN-LHC (HL-LHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few $10^{16}$~ particles/cm$^2$ at $\\sim$3~cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler-FBK, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R\\&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100~$\\mu {\\rm m}$ and 130~$\\mu {\\rm m}$ active thickness for planar sensors, and 130~$\\mu {\\rm m}$ for 3D sensors, the thinnest ones ever produced so far. First prototypes of hybrid modules bump-bonded to the present CMS and ATLAS readout chips have been tested in beam tests. Preliminary results on their performance before and after irradiation are presented.

  20. Irradiation and beam tests qualification for ATLAS IBL Pixel Modules

    CERN Document Server

    Rubinskiy, Igor

    2013-01-01

    The upgrade for the ATLAS detector will have different steps towards HL-LHC. The first upgrade for the Pixel Detector will consist in the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine (foreseen for 2013-14). The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of 33 mm. The IBL will require the development of several new technologies to cope with the increase of the radiation damage and the pixel occupancy and also to improve the physics performance, which will be achieved by reduction of the pixel size and of the material budget. Two different promising silicon sensor technologies (Planar n-in-n and 3D) are currently under investigation for the pixel detector. An overview of the sensor technologies’ qualification with particular emphasis on irradiation and beam tests are presented.

  1. Irradiation and beam tests qualification for ATLAS IBL Pixel Modules

    CERN Document Server

    Rubinskiy, I

    2013-01-01

    The upgrade for the ATLAS detector will have different steps towards HL-LHC. The first upgrade for the Pixel Detector will consist in the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine (foreseen for 2013–2014). The new detector, called Insertable B-Layer (IBL), will be inserted between the existing Pixel Detector and a new (smaller radius) beam-pipe at a radius of 33 mm. The IBL will require the development of several new technologies to cope with the increase in the radiation damage and the pixel occupancy and also to improve the physics performance, which will be achieved by reduction of the pixel size and of the material budget. Two different promising silicon sensor technologies (Planar n-in-n and 3D) are currently under investigation for the Pixel Detector. An overview of the sensor technologies' qualification with particular emphasis on irradiation and beam tests is presented.

  2. A Novel Sensor Based on a Single-Pixel Microwave Radiometer for Warm Object Counting: Concept Validation and IoT Perspectives.

    Science.gov (United States)

    Alimenti, Federico; Bonafoni, Stefania; Roselli, Luca

    2017-06-14

    Controlled measurements by a low-cost single-pixel microwave radiometer operating at 12.65 GHz were carried out to assess the detection and counting capability for targets warmer than the surroundings. The adopted reference test targets were pre-warmed water and oil; and a hand, both naked and wearing a glove. The results showed the reliability of microwave radiometry for counting operations under controlled conditions, and its effectiveness at detecting even warm targets masked by unheated dielectric layers. An electromagnetic model describing the scenario sensed by the radiometer antenna is proposed, and comparison with the experimental observations shows a good agreement. The measurements prove that reliable counting is enabled by an antenna temperature increment, for each target sample added, of around 1 K. Starting from this value, an analysis of the antenna filling factor was performed to provide an instrument useful for evaluating real applicability in many practical situations. This study also allows the direct people counting problem to be addressed, providing preliminary operational indications, reference numbers and experimental validation.

  3. Annotating smart environment sensor data for activity learning.

    Science.gov (United States)

    Szewcyzk, S; Dwan, K; Minor, B; Swedlove, B; Cook, D

    2009-01-01

    The pervasive sensing technologies found in smart homes offer unprecedented opportunities for providing health monitoring and assistance to individuals experiencing difficulties living independently at home. In order to monitor the functional health of smart home residents, we need to design technologies that recognize and track the activities that people perform at home. Machine learning techniques can perform this task, but the software algorithms rely upon large amounts of sample data that is correctly labeled with the corresponding activity. Labeling, or annotating, sensor data with the corresponding activity can be time consuming, may require input from the smart home resident, and is often inaccurate. Therefore, in this paper we investigate four alternative mechanisms for annotating sensor data with a corresponding activity label. We evaluate the alternative methods along the dimensions of annotation time, resident burden, and accuracy using sensor data collected in a real smart apartment.

  4. Active palpation sensor for detecting prostatic cancer and hypertrophy

    Science.gov (United States)

    Tanaka, Mami; Furubayashi, Mitsuyuki; Tanahashi, Yoshikatsu; Chonan, Seiji

    2001-03-01

    This paper is concerned with the development of an active palpation sensor for detecting the prostatic cancer and hypertrophy. The receptor of the sensor is a polyvinylidene fluoride (PVDF) film placed on the surface of a sponge rubber layer. It is mounted on a linear z-translation bar and inserted into the examinee's rectum being protected by a medical rubber glove. After positioned faced to the prostate gland, the sensor probe is driven sinusoidally at about 50Hz with peak-to-peak amplitude 2mm. The voltage signal from the PVDF film is integrated over the sampling period and used as the output of sensor for extracting the features of the collected data. The evaluation of stiffness by the sensor on 27 normal and unhealthy prostate glands are compared with the results of diagnosis by the doctor's palpation. It is shown that the output of sensor becomes greater with an increase of the stiffness of the prostate gland, which has good correlation with the doctor's evaluation on the stiffness. Further results on the laboratory test reconfirm that the present sensor well discriminates the stiffness of the prostate glands in vivo and non-invasively.

  5. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  6. Active Sensing System with In Situ Adjustable Sensor Morphology

    Science.gov (United States)

    Nurzaman, Surya G.; Culha, Utku; Brodbeck, Luzius; Wang, Liyu; Iida, Fumiya

    2013-01-01

    Background Despite the widespread use of sensors in engineering systems like robots and automation systems, the common paradigm is to have fixed sensor morphology tailored to fulfill a specific application. On the other hand, robotic systems are expected to operate in ever more uncertain environments. In order to cope with the challenge, it is worthy of note that biological systems show the importance of suitable sensor morphology and active sensing capability to handle different kinds of sensing tasks with particular requirements. Methodology This paper presents a robotics active sensing system which is able to adjust its sensor morphology in situ in order to sense different physical quantities with desirable sensing characteristics. The approach taken is to use thermoplastic adhesive material, i.e. Hot Melt Adhesive (HMA). It will be shown that the thermoplastic and thermoadhesive nature of HMA enables the system to repeatedly fabricate, attach and detach mechanical structures with a variety of shape and size to the robot end effector for sensing purposes. Via active sensing capability, the robotic system utilizes the structure to physically probe an unknown target object with suitable motion and transduce the arising physical stimuli into information usable by a camera as its only built-in sensor. Conclusions/Significance The efficacy of the proposed system is verified based on two results. Firstly, it is confirmed that suitable sensor morphology and active sensing capability enables the system to sense different physical quantities, i.e. softness and temperature, with desirable sensing characteristics. Secondly, given tasks of discriminating two visually indistinguishable objects with respect to softness and temperature, it is confirmed that the proposed robotic system is able to autonomously accomplish them. The way the results motivate new research directions which focus on in situ adjustment of sensor morphology will also be discussed. PMID:24416094

  7. Active sensing system with in situ adjustable sensor morphology.

    Directory of Open Access Journals (Sweden)

    Surya G Nurzaman

    Full Text Available BACKGROUND: Despite the widespread use of sensors in engineering systems like robots and automation systems, the common paradigm is to have fixed sensor morphology tailored to fulfill a specific application. On the other hand, robotic systems are expected to operate in ever more uncertain environments. In order to cope with the challenge, it is worthy of note that biological systems show the importance of suitable sensor morphology and active sensing capability to handle different kinds of sensing tasks with particular requirements. METHODOLOGY: This paper presents a robotics active sensing system which is able to adjust its sensor morphology in situ in order to sense different physical quantities with desirable sensing characteristics. The approach taken is to use thermoplastic adhesive material, i.e. Hot Melt Adhesive (HMA. It will be shown that the thermoplastic and thermoadhesive nature of HMA enables the system to repeatedly fabricate, attach and detach mechanical structures with a variety of shape and size to the robot end effector for sensing purposes. Via active sensing capability, the robotic system utilizes the structure to physically probe an unknown target object with suitable motion and transduce the arising physical stimuli into information usable by a camera as its only built-in sensor. CONCLUSIONS/SIGNIFICANCE: The efficacy of the proposed system is verified based on two results. Firstly, it is confirmed that suitable sensor morphology and active sensing capability enables the system to sense different physical quantities, i.e. softness and temperature, with desirable sensing characteristics. Secondly, given tasks of discriminating two visually indistinguishable objects with respect to softness and temperature, it is confirmed that the proposed robotic system is able to autonomously accomplish them. The way the results motivate new research directions which focus on in situ adjustment of sensor morphology will also be discussed.

  8. Active sensing system with in situ adjustable sensor morphology.

    Science.gov (United States)

    Nurzaman, Surya G; Culha, Utku; Brodbeck, Luzius; Wang, Liyu; Iida, Fumiya

    2013-01-01

    Despite the widespread use of sensors in engineering systems like robots and automation systems, the common paradigm is to have fixed sensor morphology tailored to fulfill a specific application. On the other hand, robotic systems are expected to operate in ever more uncertain environments. In order to cope with the challenge, it is worthy of note that biological systems show the importance of suitable sensor morphology and active sensing capability to handle different kinds of sensing tasks with particular requirements. This paper presents a robotics active sensing system which is able to adjust its sensor morphology in situ in order to sense different physical quantities with desirable sensing characteristics. The approach taken is to use thermoplastic adhesive material, i.e. Hot Melt Adhesive (HMA). It will be shown that the thermoplastic and thermoadhesive nature of HMA enables the system to repeatedly fabricate, attach and detach mechanical structures with a variety of shape and size to the robot end effector for sensing purposes. Via active sensing capability, the robotic system utilizes the structure to physically probe an unknown target object with suitable motion and transduce the arising physical stimuli into information usable by a camera as its only built-in sensor. The efficacy of the proposed system is verified based on two results. Firstly, it is confirmed that suitable sensor morphology and active sensing capability enables the system to sense different physical quantities, i.e. softness and temperature, with desirable sensing characteristics. Secondly, given tasks of discriminating two visually indistinguishable objects with respect to softness and temperature, it is confirmed that the proposed robotic system is able to autonomously accomplish them. The way the results motivate new research directions which focus on in situ adjustment of sensor morphology will also be discussed.

  9. [Active crop canopy sensor-based nitrogen diagnosis for potato].

    Science.gov (United States)

    Yu, Jing; Li, Fei; Qin, Yong-Lin; Fan, Ming-Shou

    2013-11-01

    In the present study, two potato experiments involving different N rates in 2011 were conducted in Wuchuan County and Linxi County, Inner Mongolia. Normalized difference vegetation index (NDVI) was collected by an active GreenSeeker crop canopy sensor to estimate N status of potato. The results show that the NDVI readings were poorly correlated with N nutrient indicators of potato at vegetative Growth stage due to the influence of soil background. With the advance of growth stages, NDVI values were exponentially related to plant N uptake (R2 = 0.665) before tuber bulking stage and were linearly related to plant N concentration (R2 = 0.699) when plant fully covered soil. In conclusion, GreenSeeker active crop sensor is a promising tool to estimate N status for potato plants. The findings from this study may be useful for developing N recommendation method based on active crop canopy sensor.

  10. Development of ERK Activity Sensor, an in vitro, FRET-based sensor of Extracellular Regulated Kinase activity

    Directory of Open Access Journals (Sweden)

    Alberola-Ila José

    2005-07-01

    Full Text Available Abstract Background Study of ERK activation has thus far relied on biochemical assays that are limited to the use of phospho-specific antibodies and radioactivity in vitro, and analysis of whole cell populations in vivo. As with many systems, fluorescence resonance energy transfer (FRET can be utilized to make highly sensitive detectors of molecular activity. Here we introduce FRET-based ERK Activity Sensors, which utilize variants of Enhanced Green Fluorescent Protein fused by an ERK-specific peptide linker to detect ERK2 activity. Results ERK Activity Sensors display varying changes in FRET upon phosphorylation by active ERK2 in vitro depending on the composition of ERK-specific peptide linker sequences derived from known in vivo ERK targets, Ets1 and Elk1. Analysis of point mutations reveals specific residues involved in ERK binding and phosphorylation of ERK Activity Sensor 3. ERK2 also shows high in vitro specificity for these sensors over two other major MAP Kinases, p38 and pSAPK/JNK. Conclusion EAS's are a convenient, non-radioactive alternative to study ERK dynamics in vitro. They can be utilized to study ERK activity in real-time. This new technology can be applied to studying ERK kinetics in vitro, analysis of ERK activity in whole cell extracts, and high-throughput screening technologies.

  11. ALICE Silicon Pixel Detector

    CERN Multimedia

    2003-01-01

    The Silicon Pixel Detector (SPD) is part of the Inner Tracking System (ITS) of the ALICE experiment : . SPD Structure . Bump Bonding . Test beam . ALICE1LHCb Readout Chip . Chip Tests . Data from the SPD

  12. A militarily fielded thermal neutron activation sensor for landmine detection

    Energy Technology Data Exchange (ETDEWEB)

    Clifford, E.T.H. [Bubble Technology Industries, Chalk River (Canada); McFee, J.E. [Defence R and D Canada-Suffield, Medicine Hat (Canada)], E-mail: john.mcfee@drdc-rddc.gc.ca; Ing, H.; Andrews, H.R.; Tennant, D.; Harper, E. [Bubble Technology Industries, Chalk River (Canada); Faust, A.A. [Defence R and D Canada-Suffield, Medicine Hat (Canada)

    2007-08-21

    The Canadian Department of National Defence has developed a teleoperated, vehicle-mounted, multi-sensor system to detect anti-tank landmines on roads and tracks in peacekeeping operations. A key part of the system is a thermal neutron activation (TNA) sensor which is placed above a suspect location to within a 30 cm radius and confirms the presence of explosives via detection of the 10.835 MeV gamma ray associated with thermal neutron capture on {sup 14}N. The TNA uses a 100{mu}g{sup 252}Cf neutron source surrounded by four 7.62cmx7.62cm NaI(Tl) detectors. The system, consisting of the TNA sensor head, including source, detectors and shielding, the high-rate, fast pulse processing electronics and the data processing methodology are described. Results of experiments to characterize detection performance are also described. The experiments have shown that anti-tank mines buried 10 cm or less can be detected in roughly a minute or less, but deeper mines and mines significantly displaced horizontally take considerably longer time. Mines as deep as 30 cm can be detected for long count times (1000 s). Four TNA detectors are now in service with the Canadian Forces as part of the four multi-sensor systems, making it the first militarily fielded TNA sensor and the first militarily fielded confirmation sensor for landmines. The ability to function well in adverse climatic conditions has been demonstrated, both in trials and operations.

  13. Sensor development at the semiconductor laboratory of the Max-Planck-Society

    Science.gov (United States)

    Bähr, A.; Lechner, P.; Ninkovic, J.

    2017-12-01

    For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

  14. Development of the MCM-D technique for pixel detector modules

    CERN Document Server

    Grah, Christian

    2005-01-01

    This thesis treats a copper--polymer based thin film technology, the MCM-D technique and its application when building hybrid pixel detector modules. The ATLAS experiment at the LHC will be equipped with a pixel detector system. The basic mechanical units of the pixel detector are multi chip modules. The main components of these modules are: 16 electronic chips, a controller chip and a large sensor tile, featuring more than 46000 sensor cells. MCM-D is a superior technique to build the necessary signal bus system and the power distribution system directly on the active sensor tile. In collaboration with the Fraunhofer Institute for Reliability and Microintegration, IZM, the thin film process is reviewed and enhanced. The multi layer system was designed and optimized for the interconnection system as well as for the 46000 pixel contacts. Laboratory measurements on prototypes prove that complex routing schemes for geometrically optimized single chips are suitable and have negligible influence on the front--end ...

  15. Active Low Intrusion Hybrid Monitor for Wireless Sensor Networks.

    Science.gov (United States)

    Navia, Marlon; Campelo, Jose C; Bonastre, Alberto; Ors, Rafael; Capella, Juan V; Serrano, Juan J

    2015-09-18

    Several systems have been proposed to monitor wireless sensor networks (WSN). These systems may be active (causing a high degree of intrusion) or passive (low observability inside the nodes). This paper presents the implementation of an active hybrid (hardware and software) monitor with low intrusion. It is based on the addition to the sensor node of a monitor node (hardware part) which, through a standard interface, is able to receive the monitoring information sent by a piece of software executed in the sensor node. The intrusion on time, code, and energy caused in the sensor nodes by the monitor is evaluated as a function of data size and the interface used. Then different interfaces, commonly available in sensor nodes, are evaluated: serial transmission (USART), serial peripheral interface (SPI), and parallel. The proposed hybrid monitor provides highly detailed information, barely disturbed by the measurement tool (interference), about the behavior of the WSN that may be used to evaluate many properties such as performance, dependability, security, etc. Monitor nodes are self-powered and may be removed after the monitoring campaign to be reused in other campaigns and/or WSNs. No other hardware-independent monitoring platforms with such low interference have been found in the literature.

  16. Sensor fusion for active vibration isolation in precision equipment

    NARCIS (Netherlands)

    Tjepkema, D.; van Dijk, Johannes; Soemers, Herman

    2012-01-01

    Sensor fusion is a promising control strategy to improve the performance of active vibration isolation systems that are used in precision equipment. Normally, those vibration isolation systems are only capable of realizing a low transmissibility. Additional objectives are to increase the damping

  17. Fusion of Smartphone Motion Sensors for Physical Activity Recognition

    NARCIS (Netherlands)

    Shoaib, M.; Bosch, S.; Durmaz, O.; Scholten, Johan; Havinga, Paul J.M.

    2014-01-01

    For physical activity recognition, smartphone sensors, such as an accelerometer and a gyroscope, are being utilized in many research studies. So far, particularly, the accelerometer has been extensively studied. In a few recent studies, a combination of a gyroscope, a magnetometer (in a supporting

  18. Fusion of Smartphone Motion Sensors for Physical Activity Recognition

    Directory of Open Access Journals (Sweden)

    Muhammad Shoaib

    2014-06-01

    Full Text Available For physical activity recognition, smartphone sensors, such as an accelerometer and a gyroscope, are being utilized in many research studies. So far, particularly, the accelerometer has been extensively studied. In a few recent studies, a combination of a gyroscope, a magnetometer (in a supporting role and an accelerometer (in a lead role has been used with the aim to improve the recognition performance. How and when are various motion sensors, which are available on a smartphone, best used for better recognition performance, either individually or in combination? This is yet to be explored. In order to investigate this question, in this paper, we explore how these various motion sensors behave in different situations in the activity recognition process. For this purpose, we designed a data collection experiment where ten participants performed seven different activities carrying smart phones at different positions. Based on the analysis of this data set, we show that these sensors, except the magnetometer, are each capable of taking the lead roles individually, depending on the type of activity being recognized, the body position, the used data features and the classification method employed (personalized or generalized. We also show that their combination only improves the overall recognition performance when their individual performances are not very high, so that there is room for performance improvement. We have made our data set and our data collection application publicly available, thereby making our experiments reproducible.

  19. Development and simulation results of a sparsification and readout circuit for wide pixel matrices

    Science.gov (United States)

    Gabrielli, A.; Giorgi, F.; Morsani, F.; Villa, M.

    2011-06-01

    In future collider experiments, the increasing luminosity and centre of mass energy are rising challenging problems in the design of new inner tracking systems. In this context we develop high-efficiency readout architectures for large binary pixel matrices that are meant to cope with the high-stressing conditions foreseen in the innermost layers of a tracker [The SuperB Conceptual Design Report, INFN/AE-07/02, SLAC-R-856, LAL 07-15, Available online at: http://www.pi.infn.it/SuperB]. We model and design digital readout circuits to be integrated on VLSI ASICs. These architectures can be realized with different technology processes and sensors: they can be implemented on the same silicon sensor substrate of a CMOS MAPS devices (Monolithic Active Pixel Sensor), on the CMOS tier of a hybrid pixel sensor or in a 3D chip where the digital layer is stacked on the sensor and the analog layers [V. Re et al., Nuc. Instr. and Meth. in Phys. Res. A, doi:10.1016/j.nima.2010.05.039]. In the presented work, we consider a data-push architecture designed for a sensor matrix of an area of about 1.3 cm 2 with a pitch of 50 microns. The readout circuit tries to take great advantage of the high density of in-pixel digital logic allowed by vertical integration. We aim at sustaining a rate density of 100 Mtrack ṡ s -1 ṡ cm -2 with a temporal resolution below 1 μs. We show how this architecture can cope with these stressing conditions presenting the results of Monte Carlo simulations.

  20. Hit efficiency study of CMS prototype forward pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dongwook; /Johns Hopkins U.

    2006-01-01

    In this paper the author describes the measurement of the hit efficiency of a prototype pixel device for the CMS forward pixel detector. These pixel detectors were FM type sensors with PSI46V1 chip readout. The data were taken with the 120 GeV proton beam at Fermilab during the period of December 2004 to February 2005. The detectors proved to be highly efficient (99.27 {+-} 0.02%). The inefficiency was primarily located near the corners of the individual pixels.

  1. Proceedings of PIXEL98 -- International pixel detector workshop

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, D.F.; Kwan, S. [eds.

    1998-08-01

    Experiments around the globe face new challenges of more precision in the face of higher interaction rates, greater track densities, and higher radiation doses, as they look for rarer and rarer processes, leading many to incorporate pixelated solid-state detectors into their plans. The highest-readout rate devices require new technologies for implementation. This workshop reviewed recent, significant progress in meeting these technical challenges. Participants presented many new results; many of them from the weeks--even days--just before the workshop. Brand new at this workshop were results on cryogenic operation of radiation-damaged silicon detectors (dubbed the Lazarus effect). Other new work included a diamond sensor with 280-micron collection distance; new results on breakdown in p-type silicon detectors; testing of the latest versions of read-out chip and interconnection designs; and the radiation hardness of deep-submicron processes.

  2. Sensors at centrosomes reveal determinants of local separase activity.

    Directory of Open Access Journals (Sweden)

    Fikret Gurkan Agircan

    2014-10-01

    Full Text Available Separase is best known for its function in sister chromatid separation at the metaphase-anaphase transition. It also has a role in centriole disengagement in late mitosis/G1. To gain insight into the activity of separase at centrosomes, we developed two separase activity sensors: mCherry-Scc1(142-467-ΔNLS-eGFP-PACT and mCherry-kendrin(2059-2398-eGFP-PACT. Both localize to the centrosomes and enabled us to monitor local separase activity at the centrosome in real time. Both centrosomal sensors were cleaved by separase before anaphase onset, earlier than the corresponding H2B-mCherry-Scc1(142-467-eGFP sensor at chromosomes. This indicates that substrate cleavage by separase is not synchronous in the cells. Depletion of the proteins astrin or Aki1, which have been described as inhibitors of centrosomal separase, did not led to a significant activation of separase at centrosomes, emphasizing the importance of direct separase activity measurements at the centrosomes. Inhibition of polo-like kinase Plk1, on the other hand, decreased the separase activity towards the Scc1 but not the kendrin reporter. Together these findings indicate that Plk1 regulates separase activity at the level of substrate affinity at centrosomes and may explain in part the role of Plk1 in centriole disengagement.

  3. Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method.

    Science.gov (United States)

    Chao, Calvin Yi-Ping; Tu, Honyih; Wu, Thomas Meng-Hsiu; Chou, Kuo-Yu; Yeh, Shang-Fu; Yin, Chin; Lee, Chih-Lin

    2017-11-23

    A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distribution is directly linked to the RTN from the pixel source follower (SF). The full 8.3 Mpixels are classified into four categories according to the observed RTN histogram peaks. A theoretical formula describing the RTN as a function of the time difference between the two phases of the correlated double sampling (CDS) is derived and validated by measured data. An on-chip time constant extraction method is developed and applied to the RTN analysis. The effects of readout circuit bandwidth on the settling ratios of the RTN histograms are investigated and successfully accounted for in a simulation using a RTN behavior model.

  4. First large DEPFET pixel modules for the Belle II Pixel Detector

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Felix; Avella, Paola; Kiesling, Christian; Koffmane, Christian; Moser, Hans-Guenther; Valentan, Manfred [Max-Planck-Institut fuer Physik, Muenchen (Germany); Andricek, Ladislav; Richter, Rainer [Halbleiterlabor der Max-Planck-Gesellschaft, Muenchen (Germany); Collaboration: Belle II-Collaboration

    2016-07-01

    DEPFET pixel detectors offer excellent signal to noise ratio, resolution and low power consumption with a low material budget. They will be used at Belle II and are a candidate for an ILC vertex detector. The pixels are integrated in a monolithic piece of silicon which also acts as PCB providing the signal and control routings for the ASICs on top. The first prototype DEPFET sensor modules for Belle II have been produced. The modules have 192000 pixels and are equipped with SMD components and three different kinds of ASICs to control and readout the pixels. The entire readout chain has to be studied; the metal layer interconnectivity and routings need to be verified. The modules are fully characterized, and the operation voltages and control sequences of the ASICs are investigated. An overview of the DEPFET concept and first characterization results is presented.

  5. Spectroscopic X-ray imaging with photon counting pixel detectors

    CERN Document Server

    Tlustos, L

    2010-01-01

    Single particle counting hybrid pixel detectors simultaneously provide low noise, high granularity and high readout speed and make it possible to build detector systems offering high spatial resolution paired with good energy resolution. A limiting factor for the spectroscopic performance of such detector systems is charge sharing between neighbouring pixels in the sensor part of the detector. The signal spectrum at the collection electrodes of the readout electronics deviates significantly from the photonic spectrum when planar segmented sensor geometries are used. The Medipix3 implements a novel, distributed signal processing architecture linking neighbouring pixels and aims at eliminating the spectral distortion produced in the sensor by charge sharing and at reducing the impact of fluorescence photons generated in the sensor itself. Preliminary results from the very first Medipix3 readouts bump bonded to 300 pm Si sensor are presented. Material reconstruction is a possible future application of spectrosco...

  6. Initial Measurements On Pixel Detector Modules For The ATLAS Upgrades

    CERN Document Server

    Gallrapp, C; The ATLAS collaboration

    2011-01-01

    Sophisticated conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming pixel detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation, which give a first impression on the charge collection properties of the different sensor technologies are presented.

  7. Fabrication of a high-density MCM-D for a pixel detector system using a BCB/Cu technology

    CERN Document Server

    Topper, M; Engelmann, G; Fehlberg, S; Gerlach, P; Wolf, J; Ehrmann, O; Becks, K H; Reichl, H

    1999-01-01

    The MCM-D which is described here is a prototype for a pixel detector system for the planned Large Hadron Collider (LHC) at CERN, Geneva. The project is within the ATLAS experiment. The module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 readout chips, each serving 24*160 pixel unit cells, a module controller chip, an optical transceiver and the local signal interconnection and power distribution buses. The extremely high wiring density which is necessary to interconnect the readout chips was achieved using a thin film copper/photo-BCB process above the pixel array. The bumping of the readout chips was done by PbSn electroplating. All dice are then attached by flip-chip assembly to the sensor diodes and the local buses. The focus of this paper is a detailed description of the technologies for the fabrication of this advanced MCM-D. (10 refs).

  8. Studies for an upgrade of ALICE Inner Tracking System: Pixel chip characterization

    Directory of Open Access Journals (Sweden)

    Park Jonghan

    2017-01-01

    Full Text Available Inner Tracking System (ITS of ALICE is used for vertex determination and tracking. Future heavy-ion program at the LHC aims to run with high luminosity. To address this challenge, upgrade program of ITS is underway, which aims at better position resolution (factor of 3, high detection efficiency (>99%, high-rate readout capabilities (100 kHz for Pb-Pb and moderate radiation hardness (> 700 krad. The new ITS will be composed with 7 layers of silicon pixel chip based on Monolithic Active Pixel Sensor (MAPS technology. The characterization test of various version of prototype chips at different phases of development has been performed. This contribution will provide the main characterization results obtained from the measurements performed at laboratories and using test beam for finalizing the pixel chip specification.

  9. Gossip: Gaseous pixels

    Science.gov (United States)

    Koffeman, E. N.

    2007-12-01

    Several years ago a revolutionary miniature TPC was developed using a pixel chip with a Micromegas foil spanned over it. To overcome the mechanical stability problems and improve the positioning accuracy while spanning a foil on top of a small readout chip a process has been developed in which a Micromegas-like grid is applied on a CMOS wafer in a post-processing step. This aluminum grid is supported on insulating pillars that are created by etching after the grid has been made. The energy resolution (measured on the absorption of the X-rays from a 55Fe source) was remarkably good. Several geometries have since been tested and we now believe that a Gas On Slimmed Silicon Pixel chip' (Gossip) may be realized. The drift region of such a gaseous pixel detector would be reduced to a millimeter. Such a detector is potentially very radiation hard (SLHC vertexing) but aging and sparking must be eliminated.

  10. Gossip: Gaseous pixels

    Energy Technology Data Exchange (ETDEWEB)

    Koffeman, E.N. [Nikhef, Kruislaan 409, 1098 SJ Amsterdam (Netherlands)], E-mail: d77@nikhef.nl

    2007-12-01

    Several years ago a revolutionary miniature TPC was developed using a pixel chip with a Micromegas foil spanned over it. To overcome the mechanical stability problems and improve the positioning accuracy while spanning a foil on top of a small readout chip a process has been developed in which a Micromegas-like grid is applied on a CMOS wafer in a post-processing step. This aluminum grid is supported on insulating pillars that are created by etching after the grid has been made. The energy resolution (measured on the absorption of the X-rays from a {sup 55}Fe source) was remarkably good. Several geometries have since been tested and we now believe that a Gas On Slimmed Silicon Pixel chip' (Gossip) may be realized. The drift region of such a gaseous pixel detector would be reduced to a millimeter. Such a detector is potentially very radiation hard (SLHC vertexing) but aging and sparking must be eliminated.

  11. Sensor-Based Activity Recognition with Dynamically Added Context

    Directory of Open Access Journals (Sweden)

    Jiahui Wen

    2015-08-01

    Full Text Available An activity recognition system essentially processes raw sensor data and maps them into latent activity classes. Most of the previous systems are built with supervised learning techniques and pre-defined data sources, and result in static models. However, in realistic and dynamic environments, original data sources may fail and new data sources become available, a robust activity recognition system should be able to perform evolution automatically with dynamic sensor availability in dynamic environments. In this paper, we propose methods that automatically incorporate dynamically available data sources to adapt and refine the recognition system at run-time. The system is built upon ensemble classifiers which can automatically choose the features with the most discriminative power. Extensive experimental results with publicly available datasets demonstrate the effectiveness of our methods.

  12. Steel bridge fatigue crack detection with piezoelectric wafer active sensors

    Science.gov (United States)

    Yu, Lingyu; Giurgiutiu, Victor; Ziehl, Paul; Ozevin, Didem; Pollock, Patrick

    2010-04-01

    Piezoelectric wafer active sensors (PWAS) are well known for its dual capabilities in structural health monitoring, acting as either actuators or sensors. Due to the variety of deterioration sources and locations of bridge defects, there is currently no single method that can detect and address the potential sources globally. In our research, our use of the PWAS based sensing has the novelty of implementing both passive (as acoustic emission) and active (as ultrasonic transducers) sensing with a single PWAS network. The combined schematic is using acoustic emission to detect the presence of fatigue cracks in steel bridges in their early stage since methods such as ultrasonics are unable to quantify the initial condition of crack growth since most of the fatigue life for these details is consumed while the fatigue crack is too small to be detected. Hence, combing acoustic emission with ultrasonic active sensing will strengthen the damage detection process. The integration of passive acoustic emission detection with active sensing will be a technological leap forward from the current practice of periodic and subjective visual inspection, and bridge management based primarily on history of past performance. In this study, extensive laboratory investigation is performed supported by theoretical modeling analysis. A demonstration system will be presented to show how piezoelectric wafer active sensor is used for acoustic emission. Specimens representing complex structures are tested. The results will also be compared with traditional acoustic emission transducers to identify the application barriers.

  13. Active resonant subwavelength grating for scannerless range imaging sensors.

    Energy Technology Data Exchange (ETDEWEB)

    Kemme, Shanalyn A.; Nellums, Robert O.; Boye, Robert R.; Peters, David William

    2006-11-01

    In this late-start LDRD, we will present a design for a wavelength-agile, high-speed modulator that enables a long-term vision for the THz Scannerless Range Imaging (SRI) sensor. It takes the place of the currently-utilized SRI micro-channel plate which is limited to photocathode sensitive wavelengths (primarily in the visible and near-IR regimes). Two of Sandia's successful technologies--subwavelength diffractive optics and THz sources and detectors--are poised to extend the capabilities of the SRI sensor. The goal is to drastically broaden the SRI's sensing waveband--all the way to the THz regime--so the sensor can see through image-obscuring, scattering environments like smoke and dust. Surface properties, such as reflectivity, emissivity, and scattering roughness, vary greatly with the illuminating wavelength. Thus, objects that are difficult to image at the SRI sensor's present near-IR wavelengths may be imaged more easily at the considerably longer THz wavelengths (0.1 to 1mm). The proposed component is an active Resonant Subwavelength Grating (RSG). Sandia invested considerable effort on a passive RSG two years ago, which resulted in a highly-efficient (reflectivity greater than gold), wavelength-specific reflector. For this late-start LDRD proposal, we will transform the passive RSG design into an active laser-line reflector.

  14. Improved thermal neutron activation sensor for detection of bulk explosives

    Science.gov (United States)

    McFee, John E.; Faust, Anthony A.; Andrews, H. Robert; Clifford, Edward T. H.; Mosquera, Cristian M.

    2012-06-01

    Defence R&D Canada - Suffield and Bubble Technology Industries have been developing thermal neutron activation (TNA) sensors for detection of buried bulk explosives since 1994. First generation sensors, employing an isotopic source and NaI(Tl) gamma ray detectors, were deployed by Canadian Forces in 2002 as confirmation sensors on the ILDS teleoperated, vehicle-mounted, multi-sensor anti-tank landmine detection systems. The first generation TNA could detect anti-tank mines buried 10 cm or less in no more than a minute, but deeper mines and those significantly displaced horizontally required considerably longer times. Mines as deep as 30 cm could be detected with long counting times (1000 s). The second generation TNA detector is being developed with a number of improvements aimed at increasing sensitivity and facilitating ease of operation. Among these are an electronic neutron generator to increase sensitivity for deeper and horizontally displaced explosives; LaBr3(Ce) scintillators, to improve time response and energy resolution; improved thermal and electronic stability; improved sensor head geometry to minimize spatial response nonuniformity; and more robust data processing. This improved sensitivity can translate to either decreased counting times, decreased minimum detectable explosive quantities, increased maximum sensor-to-target displacement, or a trade off among all three. Experiments to characterize the performance of the latest generation TNA in detecting buried landmines and IEDs hidden in culverts were conducted during 2011. This paper describes the second generation system. The experimental setup and methodology are detailed and preliminary comparisons between the performance of first and second generation systems are presented.

  15. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  16. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  17. Pixel detector insertion

    CERN Multimedia

    CMS

    2015-01-01

    Insertion of the Pixel Tracker, the 66-million-channel device used to pinpoint the vertex of each colliding proton pair, located at the heart of the detector. The geometry of CMS is a cylinder lying on its side (22 meters long and 15 meters high in dia

  18. Piezoelectric sensor characteristics of electro-active paper

    Science.gov (United States)

    Lee, Ho Cheol; Kim, Heung Soo; Yun, Gyu Young; Kim, Jaehwan

    2009-03-01

    The possibility as a vibration sensor of Electro-Active paper (EAPap) based on piezoelectricity was investigated in the present paper. The EAPap was fabricated by regenerating and tape casting cellulose. The sample was coated by thin laminating film for packaging. The capacitance of EAPap was measured and compared with commercial PVDF. Relative permittivity of EAPap was 12, which was same as commercially available PVDF. This reveals that EAPap has similar sensing potential of synthetic piezo polymer film. The simple aluminum cantilevered beam was used for the vibration testing and EAPap was attached on the beam. The original EAPap sensor without grounding and shielding has greatly affected by the surrounding noise such as power noise especially. The power noise reduced dramatically with grounding and shielding of EAPap. The impulsive response of EAPap provided correct dynamic characteristics of the beam. Especially, twisting mode of the beam was clearly observed even though the EAPap was attached at the center of the beam. This is because the sensing capability of EAPap is based on piezoelectricity which is bidirectional strain characteristics. EAPap sensor based on piezoelectricity provided a great potential as a vibration sensor.

  19. Active sensors for health monitoring of aging aerospace structures

    Energy Technology Data Exchange (ETDEWEB)

    GIURGIUTIU,VICTOR; REDMOND,JAMES M.; ROACH,DENNIS P.; RACKOW,KIRK A.

    2000-03-08

    A project to develop non-intrusive active sensors that can be applied on existing aging aerospace structures for monitoring the onset and progress of structural damage (fatigue cracks and corrosion) is presented. The state of the art in active sensors structural health monitoring and damage detection is reviewed. Methods based on (a) elastic wave propagation and (b) electro-mechanical (NM) impedance technique are sighted and briefly discussed. The instrumentation of these specimens with piezoelectric active sensors is illustrated. The main detection strategies (E/M impedance for local area detection and wave propagation for wide area interrogation) are discussed. The signal processing and damage interpretation algorithms are tuned to the specific structural interrogation method used. In the high-frequency EIM impedance approach, pattern recognition methods are used to compare impedance signatures taken at various time intervals and to identify damage presence and progression from the change in these signatures. In the wave propagation approach, the acoustic-ultrasonic methods identifying additional reflection generated from the damage site and changes in transmission velocity and phase are used. Both approaches benefit from the use of artificial intelligence neural networks algorithms that can extract damage features based on a learning process. Design and fabrication of a set of structural specimens representative of aging aerospace structures is presented. Three built-up specimens, (pristine, with cracks, and with corrosion damage) are used. The specimen instrumentation with active sensors fabricated at the University of South Carolina is illustrated. Preliminary results obtained with the E/M impedance method on pristine and cracked specimens are presented.

  20. Active sensors for health monitoring of aging aerospace structures

    Energy Technology Data Exchange (ETDEWEB)

    GIURGIUTIU,VICTOR; REDMOND,JAMES M.; ROACH,DENNIS P.; RACKOW,KIRK A.

    2000-02-29

    A project to develop non-intrusive active sensors that can be applied on existing aging aerospace structures for monitoring the onset and progress of structural damage (fatigue cracks and corrosion) is presented. The state of the art in active sensors structural health monitoring and damage detection is reviewed. Methods based on (a) elastic wave propagation and (b) electro-mechanical (E/M) impedance technique are cited and briefly discussed. The instrumentation of these specimens with piezoelectric active sensors is illustrated. The main detection strategies (E/M impedance for local area detection and wave propagation for wide area interrogation) are discussed. The signal processing and damage interpretation algorithms are tuned to the specific structural interrogation method used. In the high-frequency E/M impedance approach, pattern recognition methods are used to compare impedance signatures taken at various time intervals and to identify damage presence and progression from the change in these signatures. In the wave propagation approach, the acousto-ultrasonic methods identifying additional reflection generated from the damage site and changes in transmission velocity and phase are used. Both approaches benefit from the use of artificial intelligence neural networks algorithms that can extract damage features based on a learning process. Design and fabrication of a set of structural specimens representative of aging aerospace structures is presented. Three built-up specimens (pristine, with cracks, and with corrosion damage) are used. The specimen instrumentation with active sensors fabricated at the University of South Carolina is illustrated. Preliminary results obtained with the E/M impedance method on pristine and cracked specimens are presented.

  1. Active Integrated Antennas for Sensor and Communication Applications

    OpenAIRE

    Kaleja, Martin

    2007-01-01

    Active integrated antennas are used for frequency generation and the radiation of millimeter-waves. Due to their compactness and low-cost fabrication, they are suited for different sensor and communication applications. Modeling these antennas is a difficult task due to the com-bination of antenna and oscillator properties. This thesis presents modeling approaches for different antenna concepts that significantly ease the design process while maintaining design accuracy. The validity of these...

  2. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M.

    2016-07-21

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  3. Variable pixel size ionospheric tomography

    Science.gov (United States)

    Zheng, Dunyong; Zheng, Hongwei; Wang, Yanjun; Nie, Wenfeng; Li, Chaokui; Ao, Minsi; Hu, Wusheng; Zhou, Wei

    2017-06-01

    A novel ionospheric tomography technique based on variable pixel size was developed for the tomographic reconstruction of the ionospheric electron density (IED) distribution. In variable pixel size computerized ionospheric tomography (VPSCIT) model, the IED distribution is parameterized by a decomposition of the lower and upper ionosphere with different pixel sizes. Thus, the lower and upper IED distribution may be very differently determined by the available data. The variable pixel size ionospheric tomography and constant pixel size tomography are similar in most other aspects. There are some differences between two kinds of models with constant and variable pixel size respectively, one is that the segments of GPS signal pay should be assigned to the different kinds of pixel in inversion; the other is smoothness constraint factor need to make the appropriate modified where the pixel change in size. For a real dataset, the variable pixel size method distinguishes different electron density distribution zones better than the constant pixel size method. Furthermore, it can be non-chided that when the effort is spent to identify the regions in a model with best data coverage. The variable pixel size method can not only greatly improve the efficiency of inversion, but also produce IED images with high fidelity which are the same as a used uniform pixel size method. In addition, variable pixel size tomography can reduce the underdetermined problem in an ill-posed inverse problem when the data coverage is irregular or less by adjusting quantitative proportion of pixels with different sizes. In comparison with constant pixel size tomography models, the variable pixel size ionospheric tomography technique achieved relatively good results in a numerical simulation. A careful validation of the reliability and superiority of variable pixel size ionospheric tomography was performed. Finally, according to the results of the statistical analysis and quantitative comparison, the

  4. Motion Sensor Use for Physical Activity Data: Methodological Considerations.

    Science.gov (United States)

    McCarthy, Margaret; Grey, Margaret

    2015-01-01

    Physical inactivity continues to be a major risk factor for cardiovascular disease, and only one half of adults in the United States meet physical activity (PA) goals. PA data are often collected for surveillance or for measuring change after an intervention. One of the challenges in PA research is quantifying exactly how much and what type of PA is taking place-especially because self-report instruments have inconsistent validity. The purpose is to review the elements to consider when collecting PA data via motion sensors, including the difference between PA and exercise, type of data to collect, choosing the device, length of time to monitor PA, instructions to the participants, and interpretation of the data. The current literature on motion sensor research was reviewed and synthesized to summarize relevant considerations when using a motion sensor to collect PA data. Exercise is a division of PA that is structured, planned, and repetitive. Pedometer data include steps taken and calculated distance and energy expenditure. Accelerometer data include activity counts and intensity. The device chosen depends on desired data, cost, validity, and ease of use. Reactivity to the device may influence the duration of data collection. Instructions to participants may vary depending on the purpose of the study. Experts suggest pedometer data be reported as steps-because that is the direct output-and distance traveled and energy expenditure are estimated values. Accelerometer count data may be analyzed to provide information on time spent in moderate or vigorous activity. Thoughtful decision making about PA data collection using motion sensor devices is needed to advance nursing science.

  5. New concept of a submillimetric pixellated Silicon detector for intracerebral application

    Science.gov (United States)

    Benoit, M.; Märk, J.; Weiss, P.; Benoit, D.; Clemens, J. C.; Fougeron, D.; Janvier, B.; Jevaud, M.; Karkar, S.; Menouni, M.; Pain, F.; Pinot, L.; Morel, C.; Laniece, P.

    2011-12-01

    A new beta+ radiosensitive microprobe implantable in rodent brain dedicated to in vivo and autonomous measurements of local time activity curves of beta radiotracers in a volume of brain tissue of a few mm3 has been developed recently. This project expands the concept of the previously designed beta microprobe, which has been validated extensively in neurobiological experiments performed on anesthetized animals. Due to its limitations considering recordings on awake and freely moving animals, we have proposed to develop a wireless setup that can be worn by an animal without constraining its movements. To that aim, we have chosen a highly beta sensitive Silicon-based detector to devise a compact pixellated probe. Miniaturized wireless electronics is used to read-out and transfer the measurement data. Initial Monte-Carlo simulations showed that high resistive Silicon pixels are appropriate for this purpose, with their dimensions to be adapted to our specific signals. More precisely, we demonstrated that 200 μm thick pixels with an area of 200 μm×500 μm are optimized in terms of beta+sensitivity versus relative transparency to the gamma background. Based on this theoretical study, we now present the development of the novel sensor, including the system simulations with technology computer-assisted design (TCAD) to investigate specific configurations of guard rings and their potential to increase the electrical isolation and stabilization of the pixel, as well as the corresponding physical tests to validate the particular geometries of this new sensor.

  6. Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, H. [PBI-Dansensor A/S (Denmark); Toft Soerensen, O. [Risoe National Lab., Materials Research Dept. (Denmark)

    1999-10-01

    A new type of ceramic oxygen sensors based on semiconducting oxides was developed in this project. The advantage of these sensors compared to standard ZrO{sub 2} sensors is that they do not require a reference gas and that they can be produced in small sizes. The sensor design and the techniques developed for production of these sensors are judged suitable by the participating industry for a niche production of a new generation of oxygen sensors. Materials research on new oxygen ion conducting conductors both for applications in oxygen sensors and in fuel was also performed in this project and finally a new process was developed for fabrication of ceramic tubes by dip-coating. (EHS)

  7. Sensors

    CERN Document Server

    Pigorsch, Enrico

    1997-01-01

    This is the 5th edition of the Metra Martech Directory "EUROPEAN CENTRES OF EXPERTISE - SENSORS." The entries represent a survey of European sensors development. The new edition contains 425 detailed profiles of companies and research institutions in 22 countries. This is reflected in the diversity of sensors development programmes described, from sensors for physical parameters to biosensors and intelligent sensor systems. We do not claim that all European organisations developing sensors are included, but this is a good cross section from an invited list of participants. If you see gaps or omissions, or would like your organisation to be included, please send details. The data base invites the formation of effective joint ventures by identifying and providing access to specific areas in which organisations offer collaboration. This issue is recognised to be of great importance and most entrants include details of collaboration offered and sought. We hope the directory on Sensors will help you to find the ri...

  8. Active Wireless Temperature Sensors for Aerospace Thermal Protection Systems

    Science.gov (United States)

    Milos, Frank S.; Karunaratne, K.; Arnold, Jim (Technical Monitor)

    2002-01-01

    Health diagnostics is an area where major improvements have been identified for potential implementation into the design of new reusable launch vehicles in order to reduce life-cycle costs, to increase safety margins, and to improve mission reliability. NASA Ames is leading the effort to advance inspection and health management technologies for thermal protection systems. This paper summarizes a joint project between NASA Ames and Korteks to develop active wireless sensors that can be embedded in the thermal protection system to monitor sub-surface temperature histories. These devices are thermocouples integrated with radio-frequency identification circuitry to enable acquisition and non-contact communication of temperature data through aerospace thermal protection materials. Two generations of prototype sensors are discussed. The advanced prototype collects data from three type-k thermocouples attached to a 2.54-cm square integrated circuit.

  9. Active Sensing and Its Application to Sensor Node Reconfiguration

    Directory of Open Access Journals (Sweden)

    Sooyong Lee

    2014-10-01

    Full Text Available This paper presents a perturbation/correlation-based active sensing method and its application to sensor node configuration for environment monitoring. Sensor networks are widely used as data measurement tools, especially in dangerous environments. For large scale environment monitoring, a large number of nodes is required. For optimal measurements, the placement of nodes is very important. Nonlinear spring force-based configuration is introduced. Perturbation/correlation-based estimation of the gradient is developed and it is much more robust because it does not require any differentiation. An algorithm for tuning the stiffness using the estimated gradient for node reconfiguration is presented. The performance of the proposed algorithm is discussed with simulation results.

  10. CMS pixel upgrade project

    CERN Document Server

    Kaestli, Hans-Christian

    2010-01-01

    The LHC machine at CERN finished its first year of pp collisions at a center of mass energy of 7~TeV. While the commissioning to exploit its full potential is still ongoing, there are plans to upgrade its components to reach instantaneous luminosities beyond the initial design value after 2016. A corresponding upgrade of the innermost part of the CMS detector, the pixel detector, is needed. A full replacement of the pixel detector is planned in 2016. It will not only address limitations of the present system at higher data rates, but will aggressively lower the amount of material inside the fiducial tracking volume which will lead to better tracking and b-tagging performance. This article gives an overview of the project and illuminates the motivations and expected improvements in the detector performance.

  11. CMS pixel upgrade project

    CERN Document Server

    INSPIRE-00575876

    2011-01-01

    The LHC machine at CERN finished its first year of pp collisions at a center of mass energy of 7 TeV. While the commissioning to exploit its full potential is still ongoing, there are plans to upgrade its components to reach instantaneous luminosities beyond the initial design value after 2016. A corresponding upgrade of the innermost part of the CMS detector, the pixel detector, is needed. A full replacement of the pixel detector is planned in 2016. It will not only address limitations of the present system at higher data rates, but will aggressively lower the amount of material inside the fiducial tracking volume which will lead to better tracking and b-tagging performance. This article gives an overview of the project and illuminates the motivations and expected improvements in the detector performance.

  12. Dead pixel correction techniques for dual-band infrared imagery

    Science.gov (United States)

    Nguyen, Chuong T.; Mould, Nick; Regens, James L.

    2015-07-01

    We present two new dead pixel correction algorithms for dual-band infrared imagery. Specifically, we address the problem of repairing unresponsive elements in the sensor array using signal processing techniques to overcome deficiencies in image quality that are present following the nonuniformity correction process. Traditionally, dead pixel correction has been performed almost exclusively using variations of the nearest neighbor technique, where the value of the dead pixel is estimated based on pixel values associated with the neighboring image structure. Our approach differs from existing techniques, for the first time we estimate the values of dead pixels using information from both thermal bands collaboratively. The proposed dual-band statistical lookup (DSL) and dual-band inpainting (DIP) algorithms use intensity and local gradient information to estimate the values of dead pixels based on the values of unaffected pixels in the supplementary infrared band. The DSL algorithm is a regression technique that uses the image intensities from the reference band to estimate the dead pixel values in the band undergoing correction. The DIP algorithm is an energy minimization technique that uses the local image gradient from the reference band and the boundary values from the affected band to estimate the dead pixel values. We evaluate the effectiveness of the proposed algorithms with 50 dual-band videos. Simulation results indicate that the proposed techniques achieve perceptually and quantitatively superior results compared to existing methods.

  13. 16 CFR 1211.13 - Inherent force activated secondary door sensors.

    Science.gov (United States)

    2010-01-01

    ... sensors. 1211.13 Section 1211.13 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER PRODUCT... § 1211.13 Inherent force activated secondary door sensors. (a) Normal operation test. (1) A force activated door sensor of a door system installed according to the installation instructions shall actuate...

  14. Polymer optical fiber grating as water activity sensor

    Science.gov (United States)

    Zhang, Wei; Webb, David J.

    2014-05-01

    Controlling the water content within a product has long been required in the chemical processing, agriculture, food storage, paper manufacturing, semiconductor, pharmaceutical and fuel industries. The limitations of water content measurement as an indicator of safety and quality are attributed to differences in the strength with which water associates with other components in the product. Water activity indicates how tightly water is "bound," structurally or chemically, in products. Water absorption introduces changes in the volume and refractive index of poly(methyl methacrylate) PMMA. Therefore for a grating made in PMMA based optical fiber, its wavelength is an indicator of water absorption and PMMA thus can be used as a water activity sensor. In this work we have investigated the performance of a PMMA based optical fiber grating as a water activity sensor in sugar solution, saline solution and Jet A-1 aviation fuel. Samples of sugar solution with sugar concentration from 0 to 8%, saline solution with concentration from 0 to 22%, and dried (10ppm), ambient (39ppm) and wet (68ppm) aviation fuels were used in experiments. The corresponding water activities are measured as 1.0 to 0.99 for sugar solution, 1.0 to 0.86 for saline solution, and 0.15, 0.57 and 1.0 for the aviation fuel samples. The water content in the measured samples ranges from 100% (pure water) to 10 ppm (dried aviation fuel). The PMMA based optical fiber grating exhibits good sensitivity and consistent response, and Bragg wavelength shifts as large as 3.4 nm when the sensor is transferred from dry fuel to wet fuel.

  15. Recognizing Multi-user Activities using Wearable Sensors in a Smart Home

    DEFF Research Database (Denmark)

    Wang, Liang; Gu, Tao; Tao, Xianping

    2010-01-01

    The advances of wearable sensors and wireless networks oer many opportunities to recognize human activities from sensor readings in pervasive computing. Existing work so far focuses mainly on recognizing activities of a single user in a home environment. However, there are typically multiple...... inhabitants in a real home and they often perform activities together. In this paper, we investigate the problem of recognizing multi-user activities using wearable sensors in a home setting. We develop a multi-modal, wearable sensor platform to collect sensor data for multiple users, and study two temporal...

  16. Fast readout of the pixel detector at the Mu3e experiment

    Energy Technology Data Exchange (ETDEWEB)

    Perrevoort, Ann-Kathrin; Gottschalk, Dirk; Huang, Qinhua; Schoening, Andre; Wiedner, Dirk [Physikalisches Institut, Universitaet Heidelberg (Germany); Berger, Niklaus [Institut fuer Kernphysik, Universitaet Mainz (Germany); Peric, Ivan [IPE, KIT Karlsruhe (Germany); Collaboration: Mu3e-Collaboration

    2015-07-01

    The Mu3e experiment - searching for the lepton-flavour violating decay of the muon into three electrons at an unprecedented sensitivity of one in 10{sup 16} decays - is based on a pixel tracking detector. The sensors are High-Voltage Monolithic Active Pixel Sensors, a technology which allows for very fast and thin detectors. This makes it an ideal fit for the high rate and low-momentum environment of Mu3e, where momentum resolution is dominated by multiple Coulomb scattering. As the detector will consist of about 275 million pixels and will be operated at up to 10{sup 9} muon stops per second, fast data readout is crucial. The current sensor prototype MuPix7 features a readout control state machine on-chip. This allows for sending zero-suppressed hit data to an FPGA via an 800 Mbit/s LVDS link. This FPGA buffers the data and sorts it by time stamps before processing and sending to the next readout stage. The MuPix7 design including its readout architecture is presented.

  17. Response of the pixel detector Timepix to heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Granja, Carlos, E-mail: carlos.granja@utef.cvut.cz [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague 2 (Czech Republic); Jakubek, Jan [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague 2 (Czech Republic); Koester, Ulli [Institute Laue Langevin, 6 rue Jules Horowitz, F-38042 Grenoble Cedex 9 (France); Platkevic, Michal; Pospisil, Stanislav [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague 2 (Czech Republic)

    2011-05-15

    The response of the pixel detector Timepix to ions in the 4-110 MeV kinetic energy range and A=3-136 mass range has been studied at the fission-fragment separator Lohengrin of the Institute Laue Langevin in Grenoble. Timepix detects single ions measuring their position, kinetic energy, and time of arrival. Heavy ions with energy above several tens of 10 MeV produce a distortion of the electronic pixel signal response which arises when the energy collected is, under conventional detector settings, of around {approx}1 MeV per pixel. This effect can be suppressed, and the detector energy range extended, by suitable pixel signal baseline and threshold levels, together with optimally low sensor chip bias voltage. Reasonable results are achieved within the range of ion mass and energy studied extending the linearity level of per pixel measured energy up to {approx}2 MeV.

  18. Further applications for mosaic pixel FPA technology

    Science.gov (United States)

    Liddiard, Kevin C.

    2011-06-01

    In previous papers to this SPIE forum the development of novel technology for next generation PIR security sensors has been described. This technology combines the mosaic pixel FPA concept with low cost optics and purpose-designed readout electronics to provide a higher performance and affordable alternative to current PIR sensor technology, including an imaging capability. Progressive development has resulted in increased performance and transition from conventional microbolometer fabrication to manufacture on 8 or 12 inch CMOS/MEMS fabrication lines. A number of spin-off applications have been identified. In this paper two specific applications are highlighted: high performance imaging IRFPA design and forest fire detection. The former involves optional design for small pixel high performance imaging. The latter involves cheap expendable sensors which can detect approaching fire fronts and send alarms with positional data via mobile phone or satellite link. We also introduce to this SPIE forum the application of microbolometer IR sensor technology to IoT, the Internet of Things.

  19. Pixel readout electronics for LHC and biomedical applications

    CERN Document Server

    Blanquart, L; Comes, G; Delpierre, P A; Fischer, P; Hausmann, J C; Keil, M; Lindner, Manfred; Meuser, S; Wermes, N

    2000-01-01

    The demanding requirements for pixel readout electronics for high- energy physics experiments and biomedical applications are reviewed. Some examples of the measured analog performance of prototype chips are given. The readout architectures of the PIxel readout for the ATlas experiment (PIRATE) chip suited for LHC experiments and of the multi-picture element counter (MPEC) counting chip targeted for biomedical applications are presented. First results with complete chip-sensor assemblies are also shown. (12 refs).

  20. Characterisation of Hybrid Pixel Detectors with capacitive charge division

    CERN Document Server

    Caccia, M; Battaglia, Marco; Kucewicz, W; Palka, H; Zalewska-Bak, A; Domanski, K; Marczewski, J; Tomaszewski, D

    2001-01-01

    In order to fully exploit the physics potential of the future high energy e+ e- linear collider, a Vertex Tracker providing high resolution track reconstruction is required. Hybrid pixel sensors are an attractive technology due to their fast read-out capabilities and radiation hardness. A novel pixel detector layout with interleaved cells between the readout nodes has been developed to improve the single point resolution. The results of the characterisation of the first processed prototypes are reported.

  1. A silicon pixel detector prototype for the CLIC vertex detector

    CERN Multimedia

    Vicente Barreto Pinto, Mateus

    2017-01-01

    A silicon pixel detector prototype for CLIC, currently under study for the innermost detector surrounding the collision point. The detector is made of a High-Voltage CMOS sensor (top) and a CLICpix2 readout chip (bottom) that are glued to each other. Both parts have a size of 3.3 x 4.0 $mm^2$ and consist of an array of 128 x 128 pixels of 25 x 25 $\\micro m^2$ size.

  2. Luminance compensation for AMOLED displays using integrated MIS sensors

    Science.gov (United States)

    Vygranenko, Yuri; Fernandes, Miguel; Louro, Paula; Vieira, Manuela

    2017-05-01

    Active-matrix organic light-emitting diodes (AMOLEDs) are ideal for future TV applications due to their ability to faithfully reproduce real images. However, pixel luminance can be affected by instability of driver TFTs and aging effect in OLEDs. This paper reports on a pixel driver utilizing a metal-insulator-semiconductor (MIS) sensor for luminance control of the OLED element. In the proposed pixel architecture for bottom-emission AMOLEDs, the embedded MIS sensor shares the same layer stack with back-channel etched a Si:H TFTs to maintain the fabrication simplicity. The pixel design for a large-area HD display is presented. The external electronics performs image processing to modify incoming video using correction parameters for each pixel in the backplane, and also sensor data processing to update the correction parameters. The luminance adjusting algorithm is based on realistic models for pixel circuit elements to predict the relation between the programming voltage and OLED luminance. SPICE modeling of the sensing part of the backplane is performed to demonstrate its feasibility. Details on the pixel circuit functionality including the sensing and programming operations are also discussed.

  3. Pixelated neutron image plates

    Science.gov (United States)

    Schlapp, M.; Conrad, H.; von Seggern, H.

    2004-09-01

    Neutron image plates (NIPs) have found widespread application as neutron detectors for single-crystal and powder diffraction, small-angle scattering and tomography. After neutron exposure, the image plate can be read out by scanning with a laser. Commercially available NIPs consist of a powder mixture of BaFBr : Eu2+ and Gd2O3 dispersed in a polymer matrix and supported by a flexible polymer sheet. Since BaFBr : Eu2+ is an excellent x-ray storage phosphor, these NIPs are particularly sensitive to ggr-radiation, which is always present as a background radiation in neutron experiments. In this work we present results on NIPs consisting of KCl : Eu2+ and LiF that were fabricated into ceramic image plates in which the alkali halides act as a self-supporting matrix without the necessity for using a polymeric binder. An advantage of this type of NIP is the significantly reduced ggr-sensitivity. However, the much lower neutron absorption cross section of LiF compared with Gd2O3 demands a thicker image plate for obtaining comparable neutron absorption. The greater thickness of the NIP inevitably leads to a loss in spatial resolution of the image plate. However, this reduction in resolution can be restricted by a novel image plate concept in which a ceramic structure with square cells (referred to as a 'honeycomb') is embedded in the NIP, resulting in a pixelated image plate. In such a NIP the read-out light is confined to the particular illuminated pixel, decoupling the spatial resolution from the optical properties of the image plate material and morphology. In this work, a comparison of experimentally determined and simulated spatial resolutions of pixelated and unstructured image plates for a fixed read-out laser intensity is presented, as well as simulations of the properties of these NIPs at higher laser powers.

  4. Nonlinear Pixel Replacement Estimation.

    Science.gov (United States)

    1986-04-01

    taken by the LANDSAT and NIMBUS-7 satellites. They also show the effect of noisy pixels on these techniques arid the types of performance... surface clutter and may not give the best representation of the true intensity values which should be there. The intent of this report is to describe...end c shell sort c sort the real arr~jy elements I(,) to I()) C ascending orde~r c subroutine sliell,,orA(x ri) real*4 x(*i, temp * rnteger*4 i~yn

  5. Design of a current based readout chip and development of a DEPFET pixel prototype system for the ILC vertex detector

    Energy Technology Data Exchange (ETDEWEB)

    Trimpl, M.

    2005-12-15

    The future TeV-scale linear collider ILC (International Linear Collider) offers a large variety of precision measurements complementary to the discovery potential of the LHC (Large Hadron Collider). To fully exploit its physics potential, a vertex detector with unprecedented performance is needed. One proposed technology for the ILC vertex detector is the DEPFET active pixel sensor. The DEPFET sensor offers particle detection with in-pixel amplification by incorporating a field effect transistor into a fully depleted high-ohmic silicon substrate. The device provides an excellent signal-to-noise ratio and a good spatial resolution at the same time. To establish a very fast readout of a DEPFET pixel matrix with row rates of 20 MHz and more, the 128 channel CURO II ASIC has been designed and fabricated. The architecture of the chip is completely based on current mode techniques (SI) perfectly adapted to the current signal of the sensor. For the ILC vertex detector a prototype system with a 64 x 128 DEPFET pixel matrix read out by the CURO II chip has been developed. The design issues and the standalone performance of the readout chip as well as first results with the prototype system will be presented. (orig.)

  6. The first bump-bonded pixel detectors on CVD diamond

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Fried, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Palmieri, V G; Pan, L S; Peitz, A; Pernicka, Manfred; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Steuerer, J; Stone, R; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Turchetta, R; Vittone, E; Wagner, A; Walsh, A M; Wedenig, R; Weilhammer, Peter; Zeuner, W; Ziock, H J; Zöller, M; Charles, E; Ciocio, A; Dao, K; Einsweiler, Kevin F; Fasching, D; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Milgrome, O; Palaio, N; Richardson, J; Sinervo, P K; Zizka, G

    1999-01-01

    Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98565544f the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 mu m was observed, consistent with expectations given the detector pitch. (13 refs).

  7. Modelling semiconductor pixel detectors

    CERN Document Server

    Mathieson, K

    2001-01-01

    expected after 200 ps in most cases. The effect of reducing the charge carrier lifetime and examining the charge collection efficiency has been utilised to explore how these detectors would respond in a harsh radiation environment. It is predicted that over critical carrier lifetimes (10 ps to 0.1 ns) an improvement of 40 % over conventional detectors can be expected. This also has positive implications for fabricating detectors, in this geometry, from materials which might otherwise be considered substandard. An analysis of charge transport in CdZnTe pixel detectors has been performed. The analysis starts with simulation studies into the formation of contacts and their influence on the internal electric field of planar detectors. The models include a number of well known defect states and these are balanced to give an agreement with a typical experimental I-V curve. The charge transport study extends to the development of a method for studying the effect of charge sharing in highly pixellated detectors. The ...

  8. Better physical activity classification using smartphone acceleration sensor.

    Science.gov (United States)

    Arif, Muhammad; Bilal, Mohsin; Kattan, Ahmed; Ahamed, S Iqbal

    2014-09-01

    Obesity is becoming one of the serious problems for the health of worldwide population. Social interactions on mobile phones and computers via internet through social e-networks are one of the major causes of lack of physical activities. For the health specialist, it is important to track the record of physical activities of the obese or overweight patients to supervise weight loss control. In this study, acceleration sensor present in the smartphone is used to monitor the physical activity of the user. Physical activities including Walking, Jogging, Sitting, Standing, Walking upstairs and Walking downstairs are classified. Time domain features are extracted from the acceleration data recorded by smartphone during different physical activities. Time and space complexity of the whole framework is done by optimal feature subset selection and pruning of instances. Classification results of six physical activities are reported in this paper. Using simple time domain features, 99 % classification accuracy is achieved. Furthermore, attributes subset selection is used to remove the redundant features and to minimize the time complexity of the algorithm. A subset of 30 features produced more than 98 % classification accuracy for the six physical activities.

  9. Monolithic pixel detectors for high energy physics

    CERN Document Server

    Snoeys, W

    2013-01-01

    Monolithic pixel detectors integrating sensor matrix and readout in one piece of silicon have revolutionized imaging for consumer applications, but despite years of research they have not yet been widely adopted for high energy physics. Two major requirements for this application, radiation tolerance and low power consumption, require charge collection by drift for the most extreme radiation levels and an optimization of the collected signal charge over input capacitance ratio ( Q / C ). It is shown that monolithic detectors can achieve Q / C for low analog power consumption and even carryout the promise to practically eliminate analog power consumption, but combining suf fi cient Q / C , collection by drift, and integration of readout circuitry within the pixel remains a challenge. An overview is given of different approaches to address this challenge, with possible advantages and disadvantages.

  10. Upgrade of ATLAS ITk Pixel Detector

    CERN Document Server

    Huegging, Fabian; The ATLAS collaboration

    2017-01-01

    The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenges to the ATLAS tracker. The current inner detector will be replaced with an entirely-silicon inner tracker (ITk) which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation levels are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors and low mass global and local support structures. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the ITk ATLAS Pixel detector developments as well as different layout options will be reviewed.

  11. Dealing with the Effects of Sensor Displacement in Wearable Activity Recognition

    Directory of Open Access Journals (Sweden)

    Oresti Banos

    2014-06-01

    Full Text Available Most wearable activity recognition systems assume a predefined sensor deployment that remains unchanged during runtime. However, this assumption does not reflect real-life conditions. During the normal use of such systems, users may place the sensors in a position different from the predefined sensor placement. Also, sensors may move from their original location to a different one, due to a loose attachment. Activity recognition systems trained on activity patterns characteristic of a given sensor deployment may likely fail due to sensor displacements. In this work, we innovatively explore the effects of sensor displacement induced by both the intentional misplacement of sensors and self-placement by the user. The effects of sensor displacement are analyzed for standard activity recognition techniques, as well as for an alternate robust sensor fusion method proposed in a previous work. While classical recognition models show little tolerance to sensor displacement, the proposed method is proven to have notable capabilities to assimilate the changes introduced in the sensor position due to self-placement and provides considerable improvements for large misplacements.

  12. REV, a BRET-based sensor of ERK activity

    Directory of Open Access Journals (Sweden)

    Chanjuan eXu

    2013-07-01

    Full Text Available Networks of signaling molecules are activated in response to environmental changes. How are these signaling networks dynamically integrated in space and time to process particular information? To tackle this issue, biosensors of single signaling pathways have been engineered. Bioluminescence resonance energy transfer (BRET-based biosensors have proven to be particularly efficient in that matter due to the high sensitivity of this technology to monitor protein-protein interactions or conformational changes in living cells. Extracellular signal-regulated kinases (ERK are ubiquitously expressed and involved in many diverse cellular functions that might be encoded by the strength and spatio-temporal pattern of ERK activation. We developed a BRET-based sensor of ERK activity, called « REV » for Rluc8-ERKsubstrate-Venus. As expected, BRET changes of REV were correlated with ERK phosphorylation, which is required for its kinase activity. In neurons, the nature of the stimuli determines the strength, the location or the moment of ERK activation, thus highlighting how acute modulation of ERK may encode the nature of initial stimulus to specify the consequences of this activation. This study provides evidence for suitability of REV as a new biosensor to address biological questions.

  13. Sensor to detect endothelialization on an active coronary stent

    Directory of Open Access Journals (Sweden)

    Coffey Arthur C

    2010-11-01

    Full Text Available Abstract Background A serious complication with drug-eluting coronary stents is late thrombosis, caused by exposed stent struts not covered by endothelial cells in the healing process. Real-time detection of this healing process could guide physicians for more individualized anti-platelet therapy. Here we present work towards developing a sensor to detect this healing process. Sensors on several stent struts could give information about the heterogeneity of healing across the stent. Methods A piezoelectric microcantilever was insulated with parylene and demonstrated as an endothelialization detector for incorporation within an active coronary stent. After initial characterization, endothelial cells were plated onto the cantilever surface. After they attached to the surface, they caused an increase in mass, and thus a decrease in the resonant frequencies of the cantilever. This shift was then detected electrically with an LCR meter. The self-sensing, self-actuating cantilever does not require an external, optical detection system, thus allowing for implanted applications. Results A cell density of 1300 cells/mm2 on the cantilever surface is detected. Conclusions We have developed a self-actuating, self-sensing device for detecting the presence of endothelial cells on a surface. The device is biocompatible and functions reliably in ionic liquids, making it appropriate for implantable applications. This sensor can be placed along the struts of a coronary stent to detect when the struts have been covered with a layer of endothelial cells and are no longer available surfaces for clot formation. Anti-platelet therapy can be adjusted in real-time with respect to a patient's level of healing and hemorrhaging risks.

  14. Optical Breath Gas Sensor for Extravehicular Activity Application

    Science.gov (United States)

    Wood, William R.; Casias, Miguel E.; Vakhtin, Andrei B.; Pilgrim, Jeffrey S> Chullen, Cinda; Falconi, Eric A.

    2012-01-01

    The function of the infrared gas transducer used during extravehicular activity (EVA) in the current space suit is to measure and report the concentration of carbon dioxide (CO2) in the ventilation loop. The next generation Portable Life Support System (PLSS) requires next generation CO2 sensing technology with performance beyond that presently in use on the Shuttle/International Space Station extravehicular mobility unit (EMU). Accommodation within space suits demands that optical sensors meet stringent size, weight, and power requirements. A laser diode (LD) spectrometer based on wavelength modulation spectroscopy (WMS) is being developed for this purpose by Vista Photonics, Inc. Two prototype devices were delivered to NASA Johnson Space Center (JSC) in September 2011. The sensors incorporate a laser diode based CO2 channel that also includes an incidental water vapor (humidity) measurement and a separate oxygen (O2) channel using a vertical cavity surface emitting laser (VCSEL). Both prototypes are controlled digitally with a field-programmable gate array (FPGA)/microcontroller architecture. Based on the results of the initial instrument development, further prototype development and testing of instruments leveraging the lessons learned were desired. The present development extends and upgrades the earlier hardware to the Advanced PLSS 2.0 test article being constructed and tested at JSC. Various improvements to the electronics and gas sampling are being advanced by this project. The combination of low power electronics with the performance of a long wavelength laser spectrometer enables multi-gas sensors with significantly increased performance over that presently offered in the EMU. .

  15. Adhesive disbond detection using piezoelectric wafer active sensors

    Science.gov (United States)

    Roth, William; Giurgiutiu, Victor

    2015-04-01

    The aerospace industry continues to increase the use of adhesives for structural bonding due to the increased joint efficiency (reduced weight), even distribution of the load path and decreases in stress concentrations. However, the limited techniques for verifying the strength of adhesive bonds has reduced its use on primary structures and requires an intensive inspection schedule. This paper discusses a potential structural health monitoring (SHM) technique for the detection of disbonds through the in situ inspection of adhesive joints. This is achieved through the use of piezoelectric wafer active sensors (PWAS), thin unobtrusive sensors which are permanently bonded to the aircraft structure. The detection method discussed in this study is electromechanical impedance spectroscopy (EMIS), a local vibration method. This method detects disbonds from the change in the mechanical impedance of the structure surrounding the disbond. This paper will discuss how predictive modeling can provide valuable insight into the inspection method, and provide better results than empirical methods alone. The inspection scheme was evaluated using the finite element method, and the results were verified experimentally using a large aluminum test article, and included both pristine and disbond coupons.

  16. A Micro-Fabricated Force Sensor Using an All Thin Film Piezoelectric Active Sensor

    Directory of Open Access Journals (Sweden)

    Junwoo Lee

    2014-11-01

    Full Text Available The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin film piezoelectric force sensor and proposed an enhanced sensing tool to be used for analyzing gentle touches without the external voltage source used in FET sensors. Both the linear sensor response from 3 kPa to 30 kPa and the exact signal responses from the moving direction illustrate the strong feasibility of the described thin film miniaturized piezoelectric force sensor.

  17. Amorphous selenium direct detection CMOS digital x-ray imager with 25 micron pixel pitch

    Science.gov (United States)

    Scott, Christopher C.; Abbaszadeh, Shiva; Ghanbarzadeh, Sina; Allan, Gary; Farrier, Michael; Cunningham, Ian A.; Karim, Karim S.

    2014-03-01

    We have developed a high resolution amorphous selenium (a-Se) direct detection imager using a large-area compatible back-end fabrication process on top of a CMOS active pixel sensor having 25 micron pixel pitch. Integration of a-Se with CMOS technology requires overcoming CMOS/a-Se interfacial strain, which initiates nucleation of crystalline selenium and results in high detector dark currents. A CMOS-compatible polyimide buffer layer was used to planarize the backplane and provide a low stress and thermally stable surface for a-Se. The buffer layer inhibits crystallization and provides detector stability that is not only a performance factor but also critical for favorable long term cost-benefit considerations in the application of CMOS digital x-ray imagers in medical practice. The detector structure is comprised of a polyimide (PI) buffer layer, the a-Se layer, and a gold (Au) top electrode. The PI layer is applied by spin-coating and is patterned using dry etching to open the backplane bond pads for wire bonding. Thermal evaporation is used to deposit the a-Se and Au layers, and the detector is operated in hole collection mode (i.e. a positive bias on the Au top electrode). High resolution a-Se diagnostic systems typically use 70 to 100 μm pixel pitch and have a pre-sampling modulation transfer function (MTF) that is significantly limited by the pixel aperture. Our results confirm that, for a densely integrated 25 μm pixel pitch CMOS array, the MTF approaches the fundamental material limit, i.e. where the MTF begins to be limited by the a-Se material properties and not the pixel aperture. Preliminary images demonstrating high spatial resolution have been obtained from a frst prototype imager.

  18. Classification Accuracies of Physical Activities Using Smartphone Motion Sensors

    Science.gov (United States)

    Wu, Wanmin; Dasgupta, Sanjoy; Ramirez, Ernesto E; Peterson, Carlyn

    2012-01-01

    Background Over the past few years, the world has witnessed an unprecedented growth in smartphone use. With sensors such as accelerometers and gyroscopes on board, smartphones have the potential to enhance our understanding of health behavior, in particular physical activity or the lack thereof. However, reliable and valid activity measurement using only a smartphone in situ has not been realized. Objective To examine the validity of the iPod Touch (Apple, Inc.) and particularly to understand the value of using gyroscopes for classifying types of physical activity, with the goal of creating a measurement and feedback system that easily integrates into individuals’ daily living. Methods We collected accelerometer and gyroscope data for 16 participants on 13 activities with an iPod Touch, a device that has essentially the same sensors and computing platform as an iPhone. The 13 activities were sitting, walking, jogging, and going upstairs and downstairs at different paces. We extracted time and frequency features, including mean and variance of acceleration and gyroscope on each axis, vector magnitude of acceleration, and fast Fourier transform magnitude for each axis of acceleration. Different classifiers were compared using the Waikato Environment for Knowledge Analysis (WEKA) toolkit, including C4.5 (J48) decision tree, multilayer perception, naive Bayes, logistic, k-nearest neighbor (kNN), and meta-algorithms such as boosting and bagging. The 10-fold cross-validation protocol was used. Results Overall, the kNN classifier achieved the best accuracies: 52.3%–79.4% for up and down stair walking, 91.7% for jogging, 90.1%–94.1% for walking on a level ground, and 100% for sitting. A 2-second sliding window size with a 1-second overlap worked the best. Adding gyroscope measurements proved to be more beneficial than relying solely on accelerometer readings for all activities (with improvement ranging from 3.1% to 13.4%). Conclusions Common categories of physical

  19. Classification accuracies of physical activities using smartphone motion sensors.

    Science.gov (United States)

    Wu, Wanmin; Dasgupta, Sanjoy; Ramirez, Ernesto E; Peterson, Carlyn; Norman, Gregory J

    2012-10-05

    Over the past few years, the world has witnessed an unprecedented growth in smartphone use. With sensors such as accelerometers and gyroscopes on board, smartphones have the potential to enhance our understanding of health behavior, in particular physical activity or the lack thereof. However, reliable and valid activity measurement using only a smartphone in situ has not been realized. To examine the validity of the iPod Touch (Apple, Inc.) and particularly to understand the value of using gyroscopes for classifying types of physical activity, with the goal of creating a measurement and feedback system that easily integrates into individuals' daily living. We collected accelerometer and gyroscope data for 16 participants on 13 activities with an iPod Touch, a device that has essentially the same sensors and computing platform as an iPhone. The 13 activities were sitting, walking, jogging, and going upstairs and downstairs at different paces. We extracted time and frequency features, including mean and variance of acceleration and gyroscope on each axis, vector magnitude of acceleration, and fast Fourier transform magnitude for each axis of acceleration. Different classifiers were compared using the Waikato Environment for Knowledge Analysis (WEKA) toolkit, including C4.5 (J48) decision tree, multilayer perception, naive Bayes, logistic, k-nearest neighbor (kNN), and meta-algorithms such as boosting and bagging. The 10-fold cross-validation protocol was used. Overall, the kNN classifier achieved the best accuracies: 52.3%-79.4% for up and down stair walking, 91.7% for jogging, 90.1%-94.1% for walking on a level ground, and 100% for sitting. A 2-second sliding window size with a 1-second overlap worked the best. Adding gyroscope measurements proved to be more beneficial than relying solely on accelerometer readings for all activities (with improvement ranging from 3.1% to 13.4%). Common categories of physical activity and sedentary behavior (walking, jogging, and

  20. Commissioning of the ATLAS pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    ATLAS Collaboration; Golling, Tobias

    2008-09-01

    The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented.

  1. LePix-A high resistivity, fully depleted monolithic pixel detector

    CERN Document Server

    Giubilato, P; Mugnier, H; Bisello, D; Marchioro, A; Snoeys, W; Denes, P; Pantano, D; Rousset, J; Mattiazzo, S; Kloukinas, K; Potenza, A; Rivetti, A; Chalmet, P

    2013-01-01

    The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 mu m to obtain back illuminated sensors operated in full depletion mode. By back processin...

  2. Imaging by photon counting with 256 x 256 pixel matrix

    CERN Document Server

    Tlustos, Lukas; Heijne, Erik H M; Llopart-Cudie, Xavier

    2004-01-01

    Using 0.25 mum standard CMOS we have developed 2-D semiconductor matrix detectors with sophisticated functionality integrated inside each pixel of a hybrid sensor module. One of these sensor modules is a matrix of 256 multiplied by 256 square 55mum pixels intended for X- ray imaging. This device is called 'Medipix2' and features a fast amplifier and two-level discrimination for signals between 1000 and 100000 equivalent electrons, with overall signal noise similar to 150 e- rms. Signal polarity and comparator thresholds are programmable. A maximum count rate of nearly 1 MHz per pixel can be achieved, which corresponds to an average flux of 3 multiplied by 10exp10 photons per cm2. The selected signals can be accumulated in each pixel in a 13- bit register. The serial readout takes 5-10 ms. A parallel readout of similar to 300 mus could also be used. Housekeeping functions such as local dark current compensation, test pulse generation, silencing of noisy pixels and threshold tuning in each pixel contribute to t...

  3. Test beam analysis of ultra-thin hybrid pixel detector assemblies with Timepix readout ASICs

    CERN Document Server

    Alipour Tehrani, Niloufar; Dannheim, Dominik; Firu, Elena; Kulis, Szymon; Redford, Sophie; Sicking, Eva

    2016-01-01

    The requirements for the vertex detector at the proposed Compact Linear Collider imply a very small material budget: less than 0.2% of a radiation length per detection layer including services and mechanical supports. We present here a study using Timepix readout ASICs hybridised to pixel sensors of 50 − 500 μm thickness, including assemblies with 100 μm thick sensors bonded to thinned 100μm thick ASICs. Sensors from three producers (Advacam, Micron Semiconductor Ltd, Canberra) with different edge termination technologies (active edge, slim edge) were bonded to Timepix ASICs. These devices were characterised with the EUDET telescope at the DESY II test beam using 5.6 GeV electrons. Their performance for the detection and tracking of minimum ionising particles was evaluated in terms of charge sharing, detection efficiency, single-point resolution and energy deposition.

  4. Vector Disparity Sensor with Vergence Control for Active Vision Systems

    Directory of Open Access Journals (Sweden)

    Eduardo Ros

    2012-02-01

    Full Text Available This paper presents an architecture for computing vector disparity for active vision systems as used on robotics applications. The control of the vergence angle of a binocular system allows us to efficiently explore dynamic environments, but requires a generalization of the disparity computation with respect to a static camera setup, where the disparity is strictly 1-D after the image rectification. The interaction between vision and motor control allows us to develop an active sensor that achieves high accuracy of the disparity computation around the fixation point, and fast reaction time for the vergence control. In this contribution, we address the development of a real-time architecture for vector disparity computation using an FPGA device. We implement the disparity unit and the control module for vergence, version, and tilt to determine the fixation point. In addition, two on-chip different alternatives for the vector disparity engines are discussed based on the luminance (gradient-based and phase information of the binocular images. The multiscale versions of these engines are able to estimate the vector disparity up to 32 fps on VGA resolution images with very good accuracy as shown using benchmark sequences with known ground-truth. The performances in terms of frame-rate, resource utilization, and accuracy of the presented approaches are discussed. On the basis of these results, our study indicates that the gradient-based approach leads to the best trade-off choice for the integration with the active vision system.

  5. First MCM-D modules for the b-physics layer of the ATLAS Pixel Detector

    CERN Document Server

    Basken, O; Ehrmann, O; Gerlach, P; Grah, C; Gregor, I M; Linder, C; Meuser, S; Richardson, J; Topper, M; Wolf, J

    2000-01-01

    The innermost layer (b-physics layer) of the ATLAS Pixel Detector will consist of modules based on MCM-D technology. Such a module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 read out ICs, each serving 24* 160 pixel unit cells, a module controller chip (MCC), an optical transceiver and the local signal interconnection and power distribution busses. We show a prototype of such a module with additional test pads on both sides. The outer dimensions of the final module will be 21.4 mm*67.8 mm. The extremely high wiring density, which is necessary to interconnect the read-out chips, was achieved using a thin film copper/photo-BCB process on the pixel array. The bumping of the read out chips was done using electroplating PbSn. All dice are then attached by flip-chip assembly to the sensor diodes and the local busses. The focus of this paper is the description of the first results of such MCM-D-type modules. (11 refs).

  6. Small Pixel Hybrid CMOS X-ray Detectors

    Science.gov (United States)

    Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

    2018-01-01

    Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

  7. Characterization of the CMS Pixel Detectors

    CERN Document Server

    Gu, Weihua

    2002-01-01

    In 2005 the Large Hadron Collider (LHC) will start the pp collisions at a high luminosity and at a center of mass energy of 14 TeV. The primary goal of the experimental programme is the search of the Higgs boson(s) and the supersymmetric particles. The programme is also proposed to detect a range of diverse signatures in order to provide guidance for future physics. The pixel detector system makes up the innermost part of the CMS experiment, which is one of the two general purpose detectors at the LHC. The main tasks of the system are vertex detection and flavor tagging. The high luminosity and the high particle multiplicity as well as the small bunch spacing at the LHC impose great challenges on the pixel detectors: radiation hardness of sensors and electronics, fast signal processing and a high granularity are the essential requirements. This thesis concentrates on the study of the suitability of two test stands, which are implemented to characterize the CMS pixel detectors: one is con-cerned with test puls...

  8. Diamond and silicon pixel detectors in high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Tsung, Jieh-Wen

    2012-10-15

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

  9. ATLAS Pixel Detector System Test

    CERN Document Server

    Triplett, N

    2007-01-01

    On June 25th of 2007 the ATLAS collaboration lowered the pixel detector into place, however before this the detector had to be qualified through a series of tests. Prior to assembly, each individual piece of the detector and services chain passed a set of quality controls. This was followed by the construction and test of the whole pixel detector. This test of the full chain of services -including the voltage supplies, opto-boards, cooling, temperature monitoring, control software, and the pixel modules themselves- is referred to as the Pixel System Test. The System Test took place in an above-ground laboratory setting at CERN and consisted of two main parts. The first half of the test focused on one of the pixel detector’s endcaps. This endcap consists of 144 modules, making up roughly 10% of the total pixel detector. For the pixel endcap test, most of the 144 modules were operated simultaneously which required that the pixel endcap’s cooling system be functioning as well[1]. Additionally, four scintilla...

  10. A Hierarchical Approach to Real-time Activity Recognition in Body Sensor Networks

    DEFF Research Database (Denmark)

    Wang, Liang; Gu, Tao; Tao, Xianping

    2012-01-01

    Real-time activity recognition in body sensor networks is an important and challenging task. In this paper, we propose a real-time, hierarchical model to recognize both simple gestures and complex activities using a wireless body sensor network. In this model, we rst use a fast and lightweight al...

  11. Real-time Human Activity Recognition using a Body Sensor Network

    DEFF Research Database (Denmark)

    Wang, Liang; Gu, Tao; Chen, Hanhua

    2010-01-01

    Real-time activity recognition using body sensor networks is an important and challenging task and it has many potential applications. In this paper, we propose a realtime, hierarchical model to recognize both simple gestures and complex activities using a wireless body sensor network...

  12. Complex Human Activity Recognition Using Smartphone and Wrist-Worn Motion Sensors

    NARCIS (Netherlands)

    Shoaib, M.; Bosch, S.; Durmaz, O.; Scholten, Johan; Havinga, Paul J.M.

    2016-01-01

    The position of on-body motion sensors plays an important role in human activity recognition. Most often, mobile phone sensors at the trouser pocket or an equivalent position are used for this purpose. However, this position is not suitable for recognizing activities that involve hand gestures, such

  13. 77 FR 52317 - Record of Decision for Surveillance Towed Array Sensor System Low Frequency Active Sonar

    Science.gov (United States)

    2012-08-29

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF DEFENSE Department of the Navy Record of Decision for Surveillance Towed Array Sensor System Low Frequency Active... Array Sensor System Low Frequency Active (SURTASS LFA) sonar systems with certain geographical...

  14. Overview of the ATLAS Insertable B-Layer Pixel Detector

    CERN Document Server

    Pernegger, H; The ATLAS collaboration

    2011-01-01

    ATLAS currently develops a new pixel detector for the first upgrade of its tracking system: The ATLAS Insertable B-Layer Pixel detector (IBL). The new layer will be inserted between the inner most layer of the current pixel detector and a new beam pipe. The sensors are placed at a radius of 3.4cm. The expected high radiation levels and high hit occupancy require new developments for front-end chip and the sensor which can stand radiation levels beyond 5E15 neq/cm2. ATLAS has developed the new FEI4 and new silicon sensors to be used as pixel modules. Furthermore a new lightweight support and cooling structure was developed, which minimizes the overall radiation and allows detector cooling with CO2 at -40C coolant temperature. Currently the overall integration and installation procedure is being developed and test ready for installation in ATLAS in 2013. The presentation summarizes the current state of development of IBL modules, first preliminary test results of the new chip with new sensors, the construction ...

  15. Monolithic CMOS pixel detector for international linear collider ...

    Indian Academy of Sciences (India)

    Studies in the U.S., Europe, and Asia, have demonstrated the power of a pixel vertex detector in experiments at a future high energy linear collider. Silicon CCDs. (charged coupled devices) [1] seemed like the vertex detector sensors of choice for the international linear collider (ILC) until the accelerator technology decision.

  16. Impact of Sensor Misplacement on Dynamic Time Warping Based Human Activity Recognition using Wearable Computers.

    Science.gov (United States)

    Kale, Nimish; Lee, Jaeseong; Lotfian, Reza; Jafari, Roozbeh

    2012-10-01

    Daily living activity monitoring is important for early detection of the onset of many diseases and for improving quality of life especially in elderly. A wireless wearable network of inertial sensor nodes can be used to observe daily motions. Continuous stream of data generated by these sensor networks can be used to recognize the movements of interest. Dynamic Time Warping (DTW) is a widely used signal processing method for time-series pattern matching because of its robustness to variations in time and speed as opposed to other template matching methods. Despite this flexibility, for the application of activity recognition, DTW can only find the similarity between the template of a movement and the incoming samples, when the location and orientation of the sensor remains unchanged. Due to this restriction, small sensor misplacements can lead to a decrease in the classification accuracy. In this work, we adopt DTW distance as a feature for real-time detection of human daily activities like sit to stand in the presence of sensor misplacement. To measure this performance of DTW, we need to create a large number of sensor configurations while the sensors are rotated or misplaced. Creating a large number of closely spaced sensors is impractical. To address this problem, we use the marker based optical motion capture system and generate simulated inertial sensor data for different locations and orientations on the body. We study the performance of the DTW under these conditions to determine the worst-case sensor location variations that the algorithm can accommodate.

  17. From Pixels to Planets

    Science.gov (United States)

    Brownston, Lee; Jenkins, Jon M.

    2015-01-01

    The Kepler Mission was launched in 2009 as NASAs first mission capable of finding Earth-size planets in the habitable zone of Sun-like stars. Its telescope consists of a 1.5-m primary mirror and a 0.95-m aperture. The 42 charge-coupled devices in its focal plane are read out every half hour, compressed, and then downlinked monthly. After four years, the second of four reaction wheels failed, ending the original mission. Back on earth, the Science Operations Center developed the Science Pipeline to analyze about 200,000 target stars in Keplers field of view, looking for evidence of periodic dimming suggesting that one or more planets had crossed the face of its host star. The Pipeline comprises several steps, from pixel-level calibration, through noise and artifact removal, to detection of transit-like signals and the construction of a suite of diagnostic tests to guard against false positives. The Kepler Science Pipeline consists of a pipeline infrastructure written in the Java programming language, which marshals data input to and output from MATLAB applications that are executed as external processes. The pipeline modules, which underwent continuous development and refinement even after data started arriving, employ several analytic techniques, many developed for the Kepler Project. Because of the large number of targets, the large amount of data per target and the complexity of the pipeline algorithms, the processing demands are daunting. Some pipeline modules require days to weeks to process all of their targets, even when run on NASA's 128-node Pleiades supercomputer. The software developers are still seeking ways to increase the throughput. To date, the Kepler project has discovered more than 4000 planetary candidates, of which more than 1000 have been independently confirmed or validated to be exoplanets. Funding for this mission is provided by NASAs Science Mission Directorate.

  18. Electro-active sensor, method for constructing the same; apparatus and circuitry for detection of electro-active species

    Science.gov (United States)

    Buehler, Martin (Inventor)

    2009-01-01

    An electro-active sensor includes a nonconductive platform with a first electrode set attached with a first side of a nonconductive platform. The first electrode set serves as an electrochemical cell that may be utilized to detect electro-active species in solution. A plurality of electrode sets and a variety of additional electrochemical cells and sensors may be attached with the nonconductive platform. The present invention also includes a method for constructing the aforementioned electro-active sensor. Additionally, an apparatus for detection and observation is disclosed, where the apparatus includes a sealable chamber for insertion of a portion of an electro-active sensor. The apparatus allows for monitoring and detection activities. Allowing for control of attached cells and sensors, a dual-mode circuitry is also disclosed. The dual-mode circuitry includes a switch, allowing the circuitry to be switched from a potentiostat to a galvanostat mode.

  19. Optical Cloud Pixel Recovery via Machine Learning

    Directory of Open Access Journals (Sweden)

    Subrina Tahsin

    2017-05-01

    Full Text Available Remote sensing derived Normalized Difference Vegetation Index (NDVI is a widely used index to monitor vegetation and land use change. NDVI can be retrieved from publicly available data repositories of optical sensors such as Landsat, Moderate Resolution Imaging Spectro-radiometer (MODIS and several commercial satellites. Studies that are heavily dependent on optical sensors are subject to data loss due to cloud coverage. Specifically, cloud contamination is a hindrance to long-term environmental assessment when using information from satellite imagery retrieved from visible and infrared spectral ranges. Landsat has an ongoing high-resolution NDVI record starting from 1984. Unfortunately, this long time series NDVI data suffers from the cloud contamination issue. Though both simple and complex computational methods for data interpolation have been applied to recover cloudy data, all the techniques have limitations. In this paper, a novel Optical Cloud Pixel Recovery (OCPR method is proposed to repair cloudy pixels from the time-space-spectrum continuum using a Random Forest (RF trained and tested with multi-parameter hydrologic data. The RF-based OCPR model is compared with a linear regression model to demonstrate the capability of OCPR. A case study in Apalachicola Bay is presented to evaluate the performance of OCPR to repair cloudy NDVI reflectance. The RF-based OCPR method achieves a root mean squared error of 0.016 between predicted and observed NDVI reflectance values. The linear regression model achieves a root mean squared error of 0.126. Our findings suggest that the RF-based OCPR method is effective to repair cloudy pixels and provides continuous and quantitatively reliable imagery for long-term environmental analysis.

  20. Human movement activity classification approaches that use wearable sensors and mobile devices

    Science.gov (United States)

    Kaghyan, Sahak; Sarukhanyan, Hakob; Akopian, David

    2013-03-01

    Cell phones and other mobile devices become part of human culture and change activity and lifestyle patterns. Mobile phone technology continuously evolves and incorporates more and more sensors for enabling advanced applications. Latest generations of smart phones incorporate GPS and WLAN location finding modules, vision cameras, microphones, accelerometers, temperature sensors etc. The availability of these sensors in mass-market communication devices creates exciting new opportunities for data mining applications. Particularly healthcare applications exploiting build-in sensors are very promising. This paper reviews different approaches of human activity recognition.

  1. Installation of a TCT set-up for characterization of novel HV-CMOS planar silicon sensors

    CERN Document Server

    Marx, Lisa

    2013-01-01

    For future upgrades of the LHC it is necessary to develop new tracking detectors: more radiation hard and cost efficient pixel detectors with high spacial resolution are required for the planned high luminosity version of the LHC (HL-LHC). For future tracking devices HV-CMOS active pixel sensors are great candidates since they fulfill all the demands mentioned above. First prototypes of these sensors are assembled on custom test boards and together with FE-I4 readout chips they make up the first test pixel detectors. One approach for testing these chips is through using lasers to induce electron-hole-pairs into the depletion zone of the sensor chip diodes to simulate an ionizing particle crossing through the bulk. Comparison measurements of irradiated/non-irradiated sensors are used to explore the radiation hardness of the sensors.

  2. Wearable Wide-Range Strain Sensors Based on Ionic Liquids and Monitoring of Human Activities

    Directory of Open Access Journals (Sweden)

    Shao-Hui Zhang

    2017-11-01

    Full Text Available Wearable sensors for detection of human activities have encouraged the development of highly elastic sensors. In particular, to capture subtle and large-scale body motion, stretchable and wide-range strain sensors are highly desired, but still a challenge. Herein, a highly stretchable and transparent stain sensor based on ionic liquids and elastic polymer has been developed. The as-obtained sensor exhibits impressive stretchability with wide-range strain (from 0.1% to 400%, good bending properties and high sensitivity, whose gauge factor can reach 7.9. Importantly, the sensors show excellent biological compatibility and succeed in monitoring the diverse human activities ranging from the complex large-scale multidimensional motions to subtle signals, including wrist, finger and elbow joint bending, finger touch, breath, speech, swallow behavior and pulse wave.

  3. Self-Activated Transparent All-Graphene Gas Sensor with Endurance to Humidity and Mechanical Bending.

    Science.gov (United States)

    Kim, Yeon Hoo; Kim, Sang Jin; Kim, Yong-Jin; Shim, Yeong-Seok; Kim, Soo Young; Hong, Byung Hee; Jang, Ho Won

    2015-10-27

    Graphene is considered as one of leading candidates for gas sensor applications in the Internet of Things owing to its unique properties such as high sensitivity to gas adsorption, transparency, and flexibility. We present self-activated operation of all graphene gas sensors with high transparency and flexibility. The all-graphene gas sensors which consist of graphene for both sensor electrodes and active sensing area exhibit highly sensitive, selective, and reversible responses to NO2 without external heating. The sensors show reliable operation under high humidity conditions and bending strain. In addition to these remarkable device performances, the significantly facile fabrication process enlarges the potential of the all-graphene gas sensors for use in the Internet of Things and wearable electronics.

  4. Pixel Detector Developments for Tracker Upgrades of the High Luminosity LHC

    CERN Document Server

    Meschini, Marco; Dalla Betta, G. F; Dinardo, Mauro; Giacomini, G; Menasce, Dario; Mendicino, R; Messineo, Alberto; Moroni, Luigi; Ronchin, S; Sultan, D.M.S; Uplegger, Lorenzo; Viliani, Lorenzo; Zoi, Irene; Zuolo, Davide

    2017-01-01

    and 3D devices. The results on the 3D pixel sensors before irradiation are very satisfactory and % make us confident support the conclusion that columnar devices are % 3D devices very good candidates for the inner layers of the upgrade pixel detectors.

  5. Sensor Data Acquisition and Processing Parameters for Human Activity Classification

    Directory of Open Access Journals (Sweden)

    Sebastian D. Bersch

    2014-03-01

    Full Text Available It is known that parameter selection for data sampling frequency and segmentation techniques (including different methods and window sizes has an impact on the classification accuracy. For Ambient Assisted Living (AAL, no clear information to select these parameters exists, hence a wide variety and inconsistency across today’s literature is observed. This paper presents the empirical investigation of different data sampling rates, segmentation techniques and segmentation window sizes and their effect on the accuracy of Activity of Daily Living (ADL event classification and computational load for two different accelerometer sensor datasets. The study is conducted using an ANalysis Of VAriance (ANOVA based on 32 different window sizes, three different segmentation algorithm (with and without overlap, totaling in six different parameters and six sampling frequencies for nine common classification algorithms. The classification accuracy is based on a feature vector consisting of Root Mean Square (RMS, Mean, Signal Magnitude Area (SMA, Signal Vector Magnitude (here SMV, Energy, Entropy, FFTPeak, Standard Deviation (STD. The results are presented alongside recommendations for the parameter selection on the basis of the best performing parameter combinations that are identified by means of the corresponding Pareto curve.

  6. Confronting Passive and Active Sensors with Non-Gaussian Statistics

    Directory of Open Access Journals (Sweden)

    Pablo Rodríguez-Gonzálvez

    2014-07-01

    Full Text Available This paper has two motivations: firstly, to compare the Digital Surface Models (DSM derived by passive (digital camera and by active (terrestrial laser scanner remote sensing systems when applied to specific architectural objects, and secondly, to test how well the Gaussian classic statistics, with its Least Squares principle, adapts to data sets where asymmetrical gross errors may appear and whether this approach should be changed for a non-parametric one. The field of geomatic technology automation is immersed in a high demanding competition in which any innovation by one of the contenders immediately challenges the opponents to propose a better improvement. Nowadays, we seem to be witnessing an improvement of terrestrial photogrammetry and its integration with computer vision to overcome the performance limitations of laser scanning methods. Through this contribution some of the issues of this “technological race” are examined from the point of view of photogrammetry. A new software is introduced and an experimental test is designed, performed and assessed to try to cast some light on this thrilling match. For the case considered in this study, the results show good agreement between both sensors, despite considerable asymmetry. This asymmetry suggests that the standard Normal parameters are not adequate to assess this type of data, especially when accuracy is of importance. In this case, standard deviation fails to provide a good estimation of the results, whereas the results obtained for the Median Absolute Deviation and for the Biweight Midvariance are more appropriate measures.

  7. Ammonia sensor and antibacterial activities of green zinc oxide nanoparticles

    Directory of Open Access Journals (Sweden)

    S. Khaleel Basha

    2016-09-01

    Full Text Available Zinc oxide nanoparticles was synthesized by alginate (A through a rapid and a facile step in the aqueous solution condition at room temperature. Fabrication of zinc oxide nanoparticles was characterized by ATR-FTIR, TEM and XRD. ATR-FTIR analysis confirmed that the A/ZnO NPs were encapsulated by the polymerized alginate. Their shape, structure and composition were assessed by SEM. TEM and XRD analysis indicated that the A/ZnO NPs give evidence of the crystalline nature of ZnO and hybrid NPs structure, which is suitable for ammonia gas sensor development. The controlled size of the A/ZnO NPs obtained using this innovative synthesis strategy minimizes the response time of 2–3 s to sense the ammonia gas significantly with a detection limit of 1 ppm were found at room temperature. The antibacterial tests revealed that the A/ZnO NPs exhibits a potent activity against gram positive and gram negative bacteria.

  8. Virtual sensors for active noise control in acoustic-structural coupled enclosures using structural sensing: robust virtual sensor design.

    Science.gov (United States)

    Halim, Dunant; Cheng, Li; Su, Zhongqing

    2011-03-01

    The work was aimed to develop a robust virtual sensing design methodology for sensing and active control applications of vibro-acoustic systems. The proposed virtual sensor was designed to estimate a broadband acoustic interior sound pressure using structural sensors, with robustness against certain dynamic uncertainties occurring in an acoustic-structural coupled enclosure. A convex combination of Kalman sub-filters was used during the design, accommodating different sets of perturbed dynamic model of the vibro-acoustic enclosure. A minimax optimization problem was set up to determine an optimal convex combination of Kalman sub-filters, ensuring an optimal worst-case virtual sensing performance. The virtual sensing and active noise control performance was numerically investigated on a rectangular panel-cavity system. It was demonstrated that the proposed virtual sensor could accurately estimate the interior sound pressure, particularly the one dominated by cavity-controlled modes, by using a structural sensor. With such a virtual sensing technique, effective active noise control performance was also obtained even for the worst-case dynamics. © 2011 Acoustical Society of America

  9. Module and Electronics Developments for the ATLAS ITK Pixel System

    CERN Document Server

    Rummler, Andr{e}; The ATLAS collaboration

    2016-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown around 2025 by an all-silicon detector (Inner Tracker, ITk). The pixel detector will be composed by the five innermost layers, instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the severe HL-LHC environment in terms of occupancy and radiation. The total area of the new pixel system could measure up to 14 m^2, depending on the final layout choice that is expected to take place in early 2017. Different designs of planar, 3D, CMOS sensors are being investigated to identify the optimal technology for the different pixel layers. In parallel sensor-chip interconnection options are evaluated in collaboration with industrial partners to identify reliable technologies when employing 100-150 μm thin chips. While the new read-out chip is being developed by the RD53 Collaboration, the pixel off detector read-out electronics will be implemented in the frame...

  10. Commissioning the CMS pixel detector with Cosmic Rays

    CERN Document Server

    Heyburn, Bernadette

    2009-01-01

    The Compact Muon Solenoid (CMS) is one of two general purpose experiments at the Large Hadron Collider. The CMS experiment prides itself on an ambitious, all silicon based, tracking system. After almost 20 years of design and construction the CMS tracker detector has been installed and commissioned. The tracker detector consists of ten layers of silicon microstrip detectors while three layers of pixel detector modules are situated closest to the interaction point. The pixel detector consists of 66 million pixels of 100mm 150mm size, and is designed to use the shape of the actual charge distribution of charged particles to gain hit resolutions down to 12mm. This paper will focus on commissioning activities in the CMS pixel detector. Results from cosmic ray studies will be presented, in addition to results obtained from the integration of the pixel detector within the CMS detector and various calibration and alignment analyses.

  11. MIMU-Wear: ontology-based sensor selection for real-world wearable activity recognition

    NARCIS (Netherlands)

    Villalonga, Claudia; Pomares, Hector; Rojas, Ignacio; Banos Legran, Oresti

    2017-01-01

    An enormous effort has been made during the recent years towards the recognition of human activity based on wearable sensors. Despite the wide variety of proposed systems, most existing solutions have in common to solely operate on predefined settings and constrained sensor setups. Real-world

  12. Dynamic Efficiency Measurements for Irradiated ATLAS Pixel Single Chip Modules

    CERN Document Server

    Pfaff, Mike; Grosse-Knetter, Jorn

    2011-01-01

    The ATLAS pixel detector is the innermost subdetector of the ATLAS experiment. Due to this, the pixel detector has to be particularly radiation hard. In this diploma thesis effects on the sensor and the electronics which are caused by irradiation are examined. It is shown how the behaviour changes between an unirradiated sample and a irradiated sample, which was treated with the same radiation dose that is expected at the end of the lifetime of ATLAS. For this study a laser system, which is used for dynamic efficiency measurements was constructed. Furthermore, the behaviour of the noise during the detection of a particle was evaluated studied.

  13. Thermal Super-Pixels for Bimodal Stress Recognition

    DEFF Research Database (Denmark)

    Irani, Ramin; Nasrollahi, Kamal; Dhall, Abhinav

    2016-01-01

    Stress is a response to time pressure or negative environmental conditions. If its stimulus iterates or stays for a long time, it affects health conditions. Thus, stress recognition is an important issue. Traditional systems for this purpose are mostly contact-based, i.e., they require a sensor...... recognition is [3] which uses a feature level fusion of the two modalities. The features in [3] are extracted directly from pixel values. In this paper we show that extracting the features from super-pixels, followed by decision level fusion results in a system outperforming [3]. The experimental results...

  14. Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

    Energy Technology Data Exchange (ETDEWEB)

    Blago, Michele Piero; Kar, Tamasi Rameshchandra; Schoening, Andre [Physikalisches Institut, Universitaet Heidelberg (Germany)

    2016-07-01

    Recent progress in pixel detector technology, for example using High Voltage-Monolithic Pixel Sensors (HV-MAPS), makes it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS and CMS or other future collider experiments. Preliminary studies have shown that nine layers of pixel sensors are sufficient to reliably reconstruct particle trajectories. The performance of such an all-pixel detector is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

  15. Carbon Nanotubes as Active Components for Gas Sensors

    Directory of Open Access Journals (Sweden)

    Wei-De Zhang

    2009-01-01

    Full Text Available The unique structure of carbon nanotubes endows them with fantastic physical and chemical characteristics. Carbon nanotubes have been widely studied due to their potential applications in many fields including conductive and high-strength composites, energy storage and energy conversion devices, sensors, field emission displays and radiation sources, hydrogen storage media, and nanometer-sized semiconductor devices, probes, and quantum wires. Some of these applications have been realized in products, while others show great potentials. The development of carbon nanotubes-based sensors has attracted intensive interest in the last several years because of their excellent sensing properties such as high selectivity and prompt response. Carbon nanotube-based gas sensors are summarized in this paper. Sensors based on single-walled, multiwalled, and well-aligned carbon nanotubes arrays are introduced. Modification of carbon nanotubes with functional groups, metals, oxides, polymers, or doping carbon nanotubes with other elements to enhance the response and selectivity of the sensors is also discussed.

  16. Inductive Displacement Sensors with a Notch Filter for an Active Magnetic Bearing System

    Directory of Open Access Journals (Sweden)

    Seng-Chi Chen

    2014-07-01

    Full Text Available Active magnetic bearing (AMB systems support rotating shafts without any physical contact, using electromagnetic forces. Each radial AMB uses two pairs of electromagnets at opposite sides of the rotor. This allows the rotor to float in the air gap, and the machine to operate without frictional losses. In active magnetic suspension, displacement sensors are necessary to detect the radial and axial movement of the suspended object. In a high-speed rotating machine equipped with an AMB, the rotor bending modes may be limited to the operating range. The natural frequencies of the rotor can cause instability. Thus, notch filters are a useful circuit for stabilizing the system. In addition, commercial displacement sensors are sometimes not suitable for AMB design, and cannot filter the noise caused by the natural frequencies of rotor. Hence, implementing displacement sensors based on the AMB structure is necessary to eliminate noises caused by natural frequency disturbances. The displacement sensor must be highly sensitive in the desired working range, and also exhibit a low interference noise, high stability, and low cost. In this study, we used the differential inductive sensor head and lock-in amplifier for synchronous demodulation. In addition, an active low-pass filter and a notch filter were used to eliminate disturbances, which caused by natural frequencies. As a consequence, the inductive displacement sensor achieved satisfactory linearity, high sensitivity, and disturbance elimination. This sensor can be easily produced for AMB applications. A prototype of these displacement sensors was built and tested.

  17. Inductive displacement sensors with a notch filter for an active magnetic bearing system.

    Science.gov (United States)

    Chen, Seng-Chi; Le, Dinh-Kha; Nguyen, Van-Sum

    2014-07-15

    Active magnetic bearing (AMB) systems support rotating shafts without any physical contact, using electromagnetic forces. Each radial AMB uses two pairs of electromagnets at opposite sides of the rotor. This allows the rotor to float in the air gap, and the machine to operate without frictional losses. In active magnetic suspension, displacement sensors are necessary to detect the radial and axial movement of the suspended object. In a high-speed rotating machine equipped with an AMB, the rotor bending modes may be limited to the operating range. The natural frequencies of the rotor can cause instability. Thus, notch filters are a useful circuit for stabilizing the system. In addition, commercial displacement sensors are sometimes not suitable for AMB design, and cannot filter the noise caused by the natural frequencies of rotor. Hence, implementing displacement sensors based on the AMB structure is necessary to eliminate noises caused by natural frequency disturbances. The displacement sensor must be highly sensitive in the desired working range, and also exhibit a low interference noise, high stability, and low cost. In this study, we used the differential inductive sensor head and lock-in amplifier for synchronous demodulation. In addition, an active low-pass filter and a notch filter were used to eliminate disturbances, which caused by natural frequencies. As a consequence, the inductive displacement sensor achieved satisfactory linearity, high sensitivity, and disturbance elimination. This sensor can be easily produced for AMB applications. A prototype of these displacement sensors was built and tested.

  18. Measuring and Classifying Land-Based and Water-Based Daily Living Activities Using Inertial Sensors

    Directory of Open Access Journals (Sweden)

    Koichi Kaneda

    2018-02-01

    Full Text Available This study classified motions of typical daily activities in both environments using inertial sensors attached at the chest and thigh to determine the optimal site to attach the sensors. Walking, chair standing and sitting, and step climbing were conducted both in water and on land. A mean, variance and skewness for acceleration data was calculated. A Neural Network and Decision Tree algorithm was applied for classifying each motion in both environments. In total, 126 and 144 samples of thigh and chest data sets were obtained for analysis in each condition. For the chest data, the algorithm correctly classified 80% of the water-based activities, and 90% of the land-based. Whilst the thigh sensor correctly classified 97% of water-based and 100% of land-based activities. The inertial sensor placed on the thigh provided the most appropriate protocol for classifying motions for land-based and water-based typical daily life activities.

  19. GigaTracker, a Thin and Fast Silicon Pixels Tracker

    CERN Document Server

    Velghe, Bob; Bonacini, Sandro; Ceccucci, Augusto; Kaplon, Jan; Kluge, Alexander; Mapelli, Alessandro; Morel, Michel; Noël, Jérôme; Noy, Matthew; Perktold, Lukas; Petagna, Paolo; Poltorak, Karolina; Riedler, Petra; Romagnoli, Giulia; Chiozzi, Stefano; Cotta Ramusino, Angelo; Fiorini, Massimiliano; Gianoli, Alberto; Petrucci, Ferruccio; Wahl, Heinrich; Arcidiacono, Roberta; Jarron, Pierre; Marchetto, Flavio; Gil, Eduardo Cortina; Nuessle, Georg; Szilasi, Nicolas

    2014-01-01

    GigaTracker, the NA62’s upstream spectrometer, plays a key role in the kinematically constrained background suppression for the study of the K + ! p + n ̄ n decay. It is made of three independent stations, each of which is a six by three cm 2 hybrid silicon pixels detector. To meet the NA62 physics goals, GigaTracker has to address challenging requirements. The hit time resolution must be better than 200 ps while keeping the total thickness of the sensor to less than 0.5 mm silicon equivalent. The 200 μm thick sensor is divided into 18000 300 μm 300 μm pixels bump-bounded to ten independent read-out chips. The chips use an end-of-column architecture and rely on time-over- threshold discriminators. A station can handle a crossing rate of 750 MHz. Microchannel cooling technology will be used to cool the assembly. It allows us to keep the sensor close to 0 C with 130 μm of silicon in the beam area. The sensor and read-out chip performance were validated using a 45 pixel demonstrator with a laser test setu...

  20. Alignment of the upgraded CMS pixel detector

    CERN Document Server

    Schroder, Matthias

    2018-01-01

    The all-silicon tracking system of the CMS experiment provides excellent resolution for charged tracks and an efficient tagging of heavy-flavour jets. After a new pixel detector has been installed during the LHC technical stop at the beginning of 2017, the positions, orientations, and surface curvatures of the sensors needed to be determined with a precision at the order of a few micrometres to ensure the required physics performance. This is far beyond the mechanical mounting precision but can be achieved using a track-based alignment procedure that minimises the track-hit residuals of reconstructed tracks. The results are carefully validated with data-driven methods. In this article, results of the CMS tracker alignment in 2017 from the early detector-commissioning phase and the later operation are presented, that were derived using several million reconstructed tracks in pp-collision and cosmic-ray data. Special emphasis is put on the alignment of the new pixel detector.

  1. The Phase II ATLAS ITk Pixel Upgrade

    CERN Document Server

    Terzo, Stefano; The ATLAS collaboration

    2017-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown (foreseen to take place around 2025) by an all-silicon detector called the "ITk" (Inner Tracker). The innermost portion of ITk will consist of a pixel detector with five layers in the barrel region and and ring-shaped supports in the endcap regions. It will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation. The total surface area of silicon in the new pixel system could measure up to 14 m$^2$ , depending on the final layout choice, which is expected to take place in early 2017. Several layout options are being investigated at the moment, including some with novel inclined support structures in the barrel-endcap overlap region and others with very long innermost barrel layers. Forward coverage could be as high as $|\\eta| < 4$. Supporting structures will be ...

  2. The Phase-2 ATLAS ITk Pixel Upgrade

    CERN Document Server

    Flick, Tobias; The ATLAS collaboration

    2016-01-01

    The entire tracking system of the ATLAS experiment will be replaced during the LHC Phase II shutdown (foreseen to take place around 2025) by an all-silicon detector called the “ITk” (Inner Tracker). The pixel detector will comprise the five innermost layers, and will be instrumented with new sensor and readout electronics technologies to improve the tracking performance and cope with the HL-LHC environment, which will be severe in terms of occupancy and radiation. The total surface area of silicon in the new pixel system could measure up to 14 m2, depending on the final layout choice, which is expected to take place in early 2017. Four layout options are being investigated at the moment, two with forward coverage to |eta| < 3.2 and two to |eta| < 4. For each coverage option, a layout with long barrel staves and a layout with novel inclined support structures in the barrel-endcap overlap region are considered. All potential layouts include modules mounted on ring-shaped supports in the endcap regions...

  3. Validation of mercury tip-switch and accelerometer activity sensors for identifying resting and active behavior in bears

    Science.gov (United States)

    Jasmine Ware,; Rode, Karyn D.; Pagano, Anthony M.; Bromaghin, Jeffrey; Charles T Robbins,; Joy Erlenbach,; Shannon Jensen,; Amy Cutting,; Nicole Nicassio-Hiskey,; Amy Hash,; Owen, Megan A.; Heiko Jansen,

    2015-01-01

    Activity sensors are often included in wildlife transmitters and can provide information on the behavior and activity patterns of animals remotely. However, interpreting activity-sensor data relative to animal behavior can be difficult if animals cannot be continuously observed. In this study, we examined the performance of a mercury tip-switch and a tri-axial accelerometer housed in collars to determine whether sensor data can be accurately classified as resting and active behaviors and whether data are comparable for the 2 sensor types. Five captive bears (3 polar [Ursus maritimus] and 2 brown [U. arctos horribilis]) were fitted with a collar specially designed to internally house the sensors. The bears’ behaviors were recorded, classified, and then compared with sensor readings. A separate tri-axial accelerometer that sampled continuously at a higher frequency and provided raw acceleration values from 3 axes was also mounted on the collar to compare with the lower resolution sensors. Both accelerometers more accurately identified resting and active behaviors at time intervals ranging from 1 minute to 1 hour (≥91.1% accuracy) compared with the mercury tip-switch (range = 75.5–86.3%). However, mercury tip-switch accuracy improved when sampled at longer intervals (e.g., 30–60 min). Data from the lower resolution accelerometer, but not the mercury tip-switch, accurately predicted the percentage of time spent resting during an hour. Although the number of bears available for this study was small, our results suggest that these activity sensors can remotely identify resting versus active behaviors across most time intervals. We recommend that investigators consider both study objectives and the variation in accuracy of classifying resting and active behaviors reported here when determining sampling interval.

  4. Prototype of the front-end circuit for the GOSSIP (Gas On Slimmed Silicon Pixel) chip in the 0.13 μm CMOS technology

    CERN Document Server

    Gromov, V; van der Graaf, H

    2007-01-01

    The new GOSSIP detector, capable to detect single electrons in gas, has certain advantages with respect silicon (pixel) detectors. It does not require a Si sensor; it has a very low detector parasitic capacitance and a zero bias current at the pixel input. These are attractive features to design a compact, low-noise and low-power integrated input circuit. A prototype of the integrated circuit has been developed in 0.13 μm CMOS technology. It includes a few channels equipped with preamplifier, discriminator and the digital circuit to study the feasibility of the TDC-perpixel concept. The design demonstrates very low input referred noise (60e- RMS) in combination with a fast peaking time (40 ns) and an analog power dissipation as low as 2 μW per channel. Switching activity on the clock bus (up to 100 MHz) in the close vicinity of the pixel input pads does not cause noticeable extra noise.

  5. A high resolution, high frame rate detector based on a microchannel plate read out with the Medipix2 counting CMOS pixel chip.

    CERN Document Server

    Mikulec, Bettina; McPhate, J B; Tremsin, A S; Siegmund, O H W; Clark, Allan G; CERN. Geneva

    2005-01-01

    The future of ground-based optical astronomy lies with advancements in adaptive optics (AO) to overcome the limitations that the atmosphere places on high resolution imaging. A key technology for AO systems on future very large telescopes are the wavefront sensors (WFS) which detect the optical phase error and send corrections to deformable mirrors. Telescopes with >30 m diameters will require WFS detectors that have large pixel formats (512x512), low noise (<3 e-/pixel) and very high frame rates (~1 kHz). These requirements have led to the idea of a bare CMOS active pixel device (the Medipix2 chip) functioning in counting mode as an anode with noiseless readout for a microchannel plate (MCP) detector and at 1 kHz continuous frame rate. First measurement results obtained with this novel detector are presented both for UV photons and beta particles.

  6. Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources

    Science.gov (United States)

    Veale, M. C.; Adkin, P.; Booker, P.; Coughlan, J.; French, M. J.; Hart, M.; Nicholls, T.; Schneider, A.; Seller, P.; Pape, I.; Sawhney, K.; Carini, G. A.; Hart, P. A.

    2017-12-01

    The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.

  7. A Secure Behavior Modification Sensor System for Physical Activity Improvement

    Science.gov (United States)

    Price, Alan

    2011-01-01

    Today, advances in wireless sensor networks are making it possible to capture large amounts of information about a person and their interaction within their home environment. However, what is missing is how to ensure the security of the collected data and its use to alter human behavior for positive benefit. In this research, exploration was…

  8. Design, synthesis, and activity of nanocellulosic protease sensors

    Science.gov (United States)

    Here we contrast the molecular assembly, and biochemical utility of nanocellulosic materials prepared from cotton and wood as protease sensors. The cotton-based nanocellulosic substrates were prepared in a variety of ways to produce nanocrystals, films and aerogels, which were derivatized with eithe...

  9. Detector Modules for the CMS Pixel Phase 1 Upgrade

    CERN Document Server

    Zhu, De Hua; Berger, Pirmin; Meinhard, Maren Tabea; Starodumov, Andrey; Tavolaro, Vittorio Raoul

    2017-01-01

    The CMS Pixel phase 1 upgrade detector consists of 1184 modules with new design. An important part of the production is the module qualification and calibration, ensuring their proper functionality within the detector. This paper summarizes the qualification and calibration results of modules used in the innermost two detector layers with focus on methods using module-internal calibration signals. Extended characterizations on pixel level such as electronic noise and bump bond connectivity, optimization of operational parameters, sensor quality and thermal stress resistance were performed using a customized setup with controlled environment. It could be shown that the selected modules have on average $0.55 \\mathrm{ {}^{0\\!}\\!/\\!_{00} }\\, \\pm \\, 0.01 \\mathrm{ {}^{0\\!}\\!/\\!_{00} }\\,$ defective pixels and that all performance parameters stay within their specifications.

  10. Online calibrations and performance of the ATLAS Pixel Detector

    CERN Document Server

    Keil, M; The ATLAS collaboration

    2010-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 M electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. The talk will give an overview of the calibration and performance of both the detector and its optical readout. The most basic parameter to be tuned and calibrated for the detector electronics is the readout threshold of the individual pixel channels. These need to be carefully tuned to optimise position resolution a...

  11. Behavior of piezoelectric wafer active sensor in various media

    Science.gov (United States)

    Kamas, Tuncay

    The dissertation addresses structural health monitoring (SHM) techniques using ultrasonic waves generated by piezoelectric wafer active sensors (PWAS) with an emphasis on the development of theoretical models of standing harmonic waves and guided waves. The focal objective of the research is to extend the theoretical study of electro-mechanical coupled PWAS as a resonator/transducer that interacts with standing and traveling waves in various media through electro-mechanical impedance spectroscopy (EMIS) method and guided wave propagation. The analytical models are developed and the coupled field finite element analysis (CF-FEA) models are simulated and verified with experiments. The dissertation is divided into two parts with respect to the developments in EMIS methods and GWP methods. In the first part, analytical and finite element models have been developed for the simulation of PWAS-EMIS in in-plane (longitudinal) and out-of-plane (thickness) mode. Temperature effects on free PWAS-EMIS are also discussed with respect to the in-plane mode. Piezoelectric material degradation on certain electrical and mechanical properties as the temperature increases is simulated by our analytical model for in-plane circular PWAS-EMIS that agrees well with the sets of experiments. Then the thickness mode PWAS-EMIS model was further developed for a PWAS resonator bonded on a plate-like structure. The latter analytical model was to determine the resonance frequencies for the normal mode expansion method through the global matrix method by considering PWAS-substrate and proof mass-PWAS-substrate models. The proof mass concept was adapted to shift the systems resonance frequencies in thickness mode. PWAS in contact with liquid medium on one of its surface has been analytically modeled and simulated the electro-mechanical response of PWAS with various liquids with different material properties such as the density and the viscosity. The second part discusses the guided wave propagation

  12. Heat-activated Plasmonic Chemical Sensors for Harsh Environments

    Energy Technology Data Exchange (ETDEWEB)

    Carpenter, Michael [SUNY Polytechnic Inst., Albany, NY (United States); Oh, Sang-Hyun [Univ. of Minnesota, Minneapolis, MN (United States)

    2015-12-01

    A passive plasmonics based chemical sensing system to be used in harsh operating environments was investigated and developed within this program. The initial proposed technology was based on combining technologies developed at the SUNY Polytechnic Institute Colleges of Nanoscale Science and Engineering (CNSE) and at the University of Minnesota (UM). Specifically, a passive wireless technique developed at UM was to utilize a heat-activated plasmonic design to passively harvest the thermal energy from within a combustion emission stream and convert this into a narrowly focused light source. This plasmonic device was based on a bullseye design patterned into a gold film using focused ion beam methods (FIB). Critical to the design was the use of thermal stabilizing under and overlayers surrounding the gold film. These stabilizing layers were based on both atomic layer deposited films as well as metal laminate layers developed by United Technologies Aerospace Systems (UTAS). While the bullseye design was never able to be thermally stabilized for operating temperatures of 500oC or higher, an alternative energy harvesting design was developed by CNSE within this program. With this new development, plasmonic sensing results are presented where thermal energy is harvested using lithographically patterned Au nanorods, replacing the need for an external incident light source. Gas sensing results using the harvested thermal energy are in good agreement with sensing experiments, which used an external incident light source. Principal Component Analysis (PCA) was used to reduce the wavelength parameter space from 665 variables down to 4 variables with similar levels of demonstrated selectivity. The method was further improved by patterning rods which harvested energy in the near infrared, which led to a factor of 10 decrease in data acquisition times as well as demonstrated selectivity with a reduced wavelength data set. The combination of a plasmonic-based energy harvesting

  13. Impact of Sensor Misplacement on Dynamic Time Warping Based Human Activity Recognition using Wearable Computers

    Science.gov (United States)

    Kale, Nimish; Lee, Jaeseong; Lotfian, Reza; Jafari, Roozbeh

    2017-01-01

    Daily living activity monitoring is important for early detection of the onset of many diseases and for improving quality of life especially in elderly. A wireless wearable network of inertial sensor nodes can be used to observe daily motions. Continuous stream of data generated by these sensor networks can be used to recognize the movements of interest. Dynamic Time Warping (DTW) is a widely used signal processing method for time-series pattern matching because of its robustness to variations in time and speed as opposed to other template matching methods. Despite this flexibility, for the application of activity recognition, DTW can only find the similarity between the template of a movement and the incoming samples, when the location and orientation of the sensor remains unchanged. Due to this restriction, small sensor misplacements can lead to a decrease in the classification accuracy. In this work, we adopt DTW distance as a feature for real-time detection of human daily activities like sit to stand in the presence of sensor misplacement. To measure this performance of DTW, we need to create a large number of sensor configurations while the sensors are rotated or misplaced. Creating a large number of closely spaced sensors is impractical. To address this problem, we use the marker based optical motion capture system and generate simulated inertial sensor data for different locations and orientations on the body. We study the performance of the DTW under these conditions to determine the worst-case sensor location variations that the algorithm can accommodate. PMID:28345080

  14. Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

    Science.gov (United States)

    Savic, N.; Bergbreiter, L.; Breuer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Terzo, S.

    2017-02-01

    The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 μm. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 μm and a novel design with the optimized biasing structure and small pixel cells (50×50 and 25×100 μm2). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50×50 μm2 pixels at high η, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.

  15. Thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Savic, N., E-mail: natascha.savic@mpp.mpg.de; Bergbreiter, L.; Breuer, J.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Terzo, S.

    2017-02-11

    The ATLAS experiment will undergo a major upgrade of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) foreseen to start around 2025. Thin planar pixel modules are promising candidates to instrument the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. New designs of the pixel cells, with an optimized biasing structure, have been implemented in n-in-p planar pixel productions with sensor thicknesses of 270 μm. Using beam tests, the gain in hit efficiency is investigated as a function of the received irradiation fluence. The outlook for future thin planar pixel sensor productions will be discussed, with a focus on thin sensors with a thickness of 100 and 150 μm and a novel design with the optimized biasing structure and small pixel cells (50×50 and 25×100 μm{sup 2}). These dimensions are foreseen for the new ATLAS read-out chip in 65 nm CMOS technology and the fine segmentation will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. To predict the performance of 50×50 μm{sup 2} pixels at high η, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angle with respect to the short pixel direction. Results on cluster shapes, charge collection- and hit efficiency will be shown.

  16. Security SVGA image sensor with on-chip video data authentication and cryptographic circuit

    Science.gov (United States)

    Stifter, P.; Eberhardt, K.; Erni, A.; Hofmann, K.

    2005-10-01

    Security applications of sensors in a networking environment has a strong demand of sensor authentication and secure data transmission due to the possibility of man-in-the-middle and address spoofing attacks. Therefore a secure sensor system should fulfil the three standard requirements of cryptography, namely data integrity, authentication and non-repudiation. This paper is intended to present the unique sensor development by AIM, the so called SecVGA, which is a high performance, monochrome (B/W) CMOS active pixel image sensor. The device is capable of capturing still and motion images with a resolution of 800x600 active pixels and converting the image into a digital data stream. The distinguishing feature of this development in comparison to standard imaging sensors is the on-chip cryptographic engine which provides the sensor authentication, based on a one-way challenge/response protocol. The implemented protocol results in the exchange of a session-key which will secure the following video data transmission. This is achieved by calculating a cryptographic checksum derived from a stateful hash value of the complete image frame. Every sensor contains an EEPROM memory cell for the non-volatile storage of a unique identifier. The imager is programmable via a two-wire I2C compatible interface which controls the integration time, the active window size of the pixel array, the frame rate and various operating modes including the authentication procedure.

  17. A 14-megapixel 36 x 24-mm2 image sensor

    Science.gov (United States)

    Meynants, Guy; Scheffer, Danny; Dierickx, Bart; Alaerts, Andre

    2004-06-01

    We will present a 3044 x 4556 pixels CMOS image sensor with a pixel array of 36 x 24 mm2, equal to the size of 35 mm film. Though primarily developed for digital photography, the compatibility of the device with standard optics for film cameras makes the device also attractive for machine vision applications as well as many scientific and highresolution applications. The sensor makes use of a standard rolling shutter 3-transistor active pixel in standard 0.35 μm CMOS technology. On-chip double sampling is used to reduce fixed pattern noise. The pixel is 8 μm large, has 60,000 electrons full well charge and a conversion gain of 18.5 μV/electron. The product of quantum efficiency and fill factor of the monochrome device is 40%. Temporal noise is 35 electrons, offering a dynamic range of 65.4 dB. Dark current is 4.2 mV/s at 30 degrees C. Fixed pattern noise is less than 1.5 mV RMS over the entire focal plane and less than 1 mV RMS in local windows of 32 x 32 pixels. The sensor is read out over 4 parallel outputs at 15 MHz each, offering 3.2 images/second. The device runs at 3.3 V and consumes 200 mW.

  18. Performance of the Pixel Luminosity Telescope for Luminosity Measurement at CMS during Run2

    CERN Document Server

    Lujan, Paul Joseph

    2017-01-01

    The Pixel Luminosity Telescope (PLT) is a dedicated system for luminosity measurement at the CMS experiment using silicon pixel sensors arranged into telescopes, each consisting of three sensor planes. It was installed in CMS at the beginning of 2015 and has been providing online and offline luminosity measurements throughout Run 2 of the LHC. The online bunch-by-bunch luminosity measurement employs the fast-or capability of the pixel readout chip to identify events where a hit is registered in all three sensors in a telescope, corresponding primarily to tracks originating from the interaction point. In addition, the full pixel information is read out at a lower rate, allowing for the calculation of corrections to the online luminosity from effects such as the miscounting of tracks not originating from the interaction point and detector efficiency. This paper presents results from the 2016 running of the PLT, including commissioning and operational history, luminosity calibration using Van der Meer scans, and...

  19. Microradiography with Semiconductor Pixel Detectors

    Science.gov (United States)

    Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiří; Holý, Tomáš; Platkevič, Michal; Pospíšil, Stanislav; Vavřík, Daniel; Vykydal, Zdeněk

    2007-11-01

    High resolution radiography (with X-rays, neutrons, heavy charged particles, …) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

  20. SLID-ICV Vertical Integration Technology for the ATLAS Pixel Upgrades

    CERN Document Server

    Macchiolo, A; Moser, H G; Nisius, R; Richter, R H; Weigell, P

    2012-01-01

    We present the results of the characterization of pixel modules composed of 75 μm thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at Fraunhofer-EMFT, is explored as an alternative to the bump-bonding process. These modules have been designed to demonstrate the feasibility of a very compact detector to be employed in the future ATLAS pixel upgrades, making use of vertical integration technologies. This module concept also envisages Inter-Chip-Vias (ICV) to extract the signals from the backside of the chips, thereby achieving a higher fraction of active area with respect to the present pixel module design. In the case of the demonstrator module, ICVs are etched over the original wire bonding pads of the FE-I3 chip. In the modules with ICVs the FE-I3 chips will be thinned down to 50 um. The status of the ICV preparation is presented.

  1. Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments

    Science.gov (United States)

    Terzo, S.; Cavallaro, E.; Casanova, R.; Di Bello, F.; Förster, F.; Grinstein, S.; Períc, I.; Puigdengoles, C.; Ristić, B.; Barrero Pinto, M. Vicente; Vilella, E.

    2017-06-01

    An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. For this purpose the H35DEMO, a large area HV-CMOS demonstrator chip, was designed by KIT, IFAE and University of Liverpool, and produced in AMS 350 nm CMOS technology. It consists of four pixel matrices and additional test structures. Two of the matrices include amplifiers and discriminator stages and are thus designed to be operated as monolithic detectors. In these devices the signal is mainly produced by charge drift in a small depleted volume obtained by applying a bias voltage of the order of 100V. Moreover, to enhance the radiation hardness of the chip, this technology allows to enclose the electronics in the same deep N-WELLs which are also used as collecting electrodes. In this contribution the characterisation of H35DEMO chips and results of the very first beam test measurements of the monolithic CMOS matrices with high energetic pions at CERN SPS will be presented.

  2. A Logarithmic Response Complementary Metal Oxide Semiconductor Image Sensor with Parasitic P-N-P Bipolar Junction Transistor

    Science.gov (United States)

    Lai, Cheng‑Hsiao; Lai, Liang‑Wei; Chiang, Wen‑Jen; King, Ya‑Chin

    2006-04-01

    Logarithmic-response complementary metal oxide semiconductor (CMOS) active pixel sensors provide a desirable attribute of wide dynamic range even with low supply voltages. In this paper, a log-mode pixel with employing parasitic P-N-P bipolar junction transistor (BJT) to amplify photo-current is investigated and optimized. A new log-mode cell with a calibration transistor is proposed to increase the output voltage swing as well as to reduce the fixed pattern noise. The measurement results demonstrate that, the output voltage swing of this new cell is enhanced by 4× and fixed pattern noise (FPN) of a pixel array can be reduced by 10× comparing to that of a conventional log-mode CMOS active pixel sensor.

  3. An Improved Indoor Robot Human-Following Navigation Model Using Depth Camera, Active IR Marker and Proximity Sensors Fusion

    National Research Council Canada - National Science Library

    Mark Tee Kit Tsun; Bee Theng Lau; Hudyjaya Siswoyo Jo

    2018-01-01

    ... model, based on multi-sensor fusion, using Microsoft Robotics Developer Studio 4 (MRDS). The model relies on a depth camera, a limited array of proximity sensors and an active IR marker tracking system...

  4. Development of isoform-specific sensors of polypeptide GalNAc-transferase activity

    DEFF Research Database (Denmark)

    Song, Lina; Bachert, Collin; Schjoldager, Katrine T

    2014-01-01

    sequence influenced their activity and required modification, which we carried out based on previous in vitro work. Significantly, the modified T2 and T3 sensors were activated only in cells lacking their corresponding isozymes. Thus, we have developed T2- and T3-specific sensors that will be valuable......Humans express up to 20 isoforms of GalNAc-transferase (herein T1-T20) that localize to the Golgi apparatus and initiate O-glycosylation. Regulation of this enzyme family affects a vast array of proteins transiting the secretory pathway and diseases arise upon misregulation of specific isoforms....... Surprisingly, molecular probes to monitor GalNAc-transferase activity are lacking and there exist no effective global or isoform-specific inhibitors. Here we describe the development of T2- and T3-isoform specific fluorescence sensors that traffic in the secretory pathway. Each sensor yielded little signal...

  5. Monolithic pixel detectors with 0.2 μm FD-SOI pixel process technology

    Science.gov (United States)

    Miyoshi, Toshinobu; Arai, Yasuo; Chiba, Tadashi; Fujita, Yowichi; Hara, Kazuhiko; Honda, Shunsuke; Igarashi, Yasushi; Ikegami, Yoichi; Ikemoto, Yukiko; Kohriki, Takashi; Ohno, Morifumi; Ono, Yoshimasa; Shinoda, Naoyuki; Takeda, Ayaki; Tauchi, Kazuya; Tsuboyama, Toru; Tadokoro, Hirofumi; Unno, Yoshinobu; Yanagihara, Masashi

    2013-12-01

    Truly monolithic pixel detectors were fabricated with 0.2 μm SOI pixel process technology by collaborating with LAPIS Semiconductor Co., Ltd. for particle tracking experiment, X-ray imaging and medical applications. CMOS circuits were fabricated on a thin SOI layer and connected to diodes formed in the silicon handle wafer through the buried oxide layer. We can choose the handle wafer and therefore high-resistivity silicon is also available. Double SOI (D-SOI) wafers fabricated from Czochralski (CZ)-SOI wafers were newly obtained and successfully processed in 2012. The top SOI layers are used as electric circuits and the middle SOI layers used as a shield layer against the back-gate effect and cross-talk between sensors and CMOS circuits, and as an electrode to compensate for the total ionizing dose (TID) effect. In 2012, we developed two SOI detectors, INTPIX5 and INTPIX3g. A spatial resolution study was done with INTPIX5 and it showed excellent performance. The TID effect study with D-SOI INTPIX3g detectors was done and we confirmed improvement of TID tolerance in D-SOI sensors.

  6. Electron imaging with Medipix2 hybrid pixel detector

    CERN Document Server

    McMullan, G; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

    2007-01-01

    The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 μm×55 μm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 μm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach 35% of that expected for a perfect detector (4/π2). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/π). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected v...

  7. Toward transparent and self-activated graphene harmonic transponder sensors

    Science.gov (United States)

    Huang, Haiyu Harry; Sakhdari, Maryam; Hajizadegan, Mehdi; Shahini, Ali; Akinwande, Deji; Chen, Pai-Yen

    2016-04-01

    We propose the concept and design of a transparent, flexible, and self-powered wireless sensor comprising a graphene-based sensor/frequency-modulator circuitry and a graphene antenna. In this all-graphene device, the multilayered-graphene antenna receives the fundamental tone at C band and retransmits the frequency-modulated sensed signal (harmonic tone) at X band. The frequency orthogonality between the received/re-transmitted signals may enable high-performance sensing in severe interference/clutter background. Here, a fully passive, quad-ring frequency multiplier is proposed using graphene field-effect transistors, of which the unique ambipolar charge transports render a frequency doubling effect with conversion gain being chemically sensitive to exposed gas/molecular/chemical/infectious agents. This transparent, light-weight, and self-powered system may potentially benefit a number of wireless sensing and diagnosis applications, particularly for smart contact lenses/glasses and microscope slides that require high optical transparency.

  8. Development of silicon micropattern pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Heijne, E.H.M.; Antinori, F.; Beker, H.; Batignani, G.; Beusch, W.; Bonvicini, V.; Bosisio, L.; Boutonnet, C.; Burger, P.; Campbell, M.; Cantoni, P.; Catanesi, M.G.; Chesi, E.; Claeys, C.; Clemens, J.C.; Cohen Solal, M.; Darbo, G.; Da Via, C.; Debusscheere, I.; Delpierre, P.; Di Bari, D.; Di Liberto, S.; Dierickx, B.; Enz, C.C.; Focardi, E.; Forti, F.; Gally, Y.; Glaser, M.; Gys, T.; Habrard, M.C.; Hallewell, G.; Hermans, L.; Heuser, J.; Hurst, R.; Inzani, P.; Jaeger, J.J.; Jarron, P.; Karttaavi, T.; Kersten, S.; Krummenacher, F.; Leitner, R.; Lemeilluer, F.; Lenti, V.; Letheren, M.; Lokajicek, M.; Loukas, D.; Macdermott, M.; Maggi, G.; Manzari, V.; Martinengo, P.; Meddeler, G.; Meddi, F.; Mekkaoui, A.; Menetrey, A.; Middelkamp, P.; Morando, M.; Munns, A.; Musico, P.; Nava, P.; Navach, F.; Neyer, C.; Pellegrini, F.; Pengg, F.; Perego, R.; Pindo, M.; Pospisil, S.; Potheau, R.; Quercigh, E.; Redaelli, N.; Ridky, J.; Rossi, L.; Sauvage, D.; Segato, G.; Simone, S.; Sopko, B.; Stefanini, G.; CERN RD19 collaboration

    1994-09-01

    Successive versions of high speed, active silicon pixel detectors with integrated readout electronics have been developed for particle physics experiments using monolithic and hybrid technologies. Various matrices with binary output as well as a linear detector with analog output have been made. The hybrid binary matrix with 1024 cells (dimension 75 [mu]mx500 [mu]m) can capture events at similar 5 MHz and a selected event can then be read out in <10 [mu]s. In different beam tests at CERN a precision of 25 [mu]m has been achieved and the efficiency was better than 99.2%. Detector thicknesses of 300 [mu]m and 150 [mu]m of silicon have been used. In a test with a [sup 109]Cd source a noise level of 170 e[sup -]r.m.s. (1.4 keV fwhm) has been measured with a threshold non-uniformity of 750 e[sup -] r.m.s. Objectives of the development work are the increase of the size of detecting area without loss of efficiency, the design of an appropriate readout architecture for collider operation, the reduction of material thickness in the detector, understanding of the threshold non-uniformity, study of the sensitivity of the pixel matrices to light and low energy electrons for scintillating fiber detector readout and last but not least, the optimization of cost and yield of the pixel detectors in production. ((orig.))

  9. CMOS in-pixel optical pulse frequency modulator

    Science.gov (United States)

    Nel, Nicolaas E.; du Plessis, M.; Joubert, T.-H.

    2016-02-01

    This paper covers the design of a complementary metal oxide semiconductor (CMOS) pixel readout circuit with a built-in frequency conversion feature. The pixel contains a CMOS photo sensor along with all signal-to-frequency conversion circuitry. An 8×8 array of these pixels is also designed. Current imaging arrays often use analog-to-digital conversion (ADC) and digital signal processing (DSP) techniques that are off-chip1. The frequency modulation technique investigated in this paper is preferred over other ADC techniques due to its smaller size, and the possibility of a higher dynamic range. Careful considerations are made regarding the size of the components of the pixel, as various characteristics of CMOS devices are limited by decreasing the scale of the components2. The methodology used was the CMOS design cycle for integrated circuit design. All components of the pixel were designed from first principles to meet necessary requirements of a small pixel size (30×30 μm2) and an output resolution greater than that of an 8-bit ADC. For the photodetector, an n+-p+/p-substrate diode was designed with a parasitic capacitance of 3 fF. The analog front-end stage was designed around a Schmitt trigger circuit. The photo current is integrated on an integration capacitor of 200 fF, which is reset when the Schmitt trigger output voltage exceeds a preset threshold. The circuit schematic and layout were designed using Cadence Virtuoso and the process used was the AMS CMOS 350 nm process using a power supply of 5V. The simulation results were confirmed to comply with specifications, and the layout passed all verification checks. The dynamic range achieved is 58.828 dB per pixel, with the output frequencies ranging from 12.341kHz to 10.783 MHz. It is also confirmed that the output frequency has a linear relationship to the photocurrent generated by the photodiode.

  10. Online calibration and performance of the ATLAS Pixel Detector

    Energy Technology Data Exchange (ETDEWEB)

    Keil, Markus, E-mail: markus.keil@cern.ch [CERN, 1211 Geneva 23 (Switzerland); II. Physikalisches Institut, Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

    2011-09-11

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 million electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. This paper describes the tuning and calibration of the optical links and the detector modules, including measurements of threshold, noise, charge measurement, timing performance and the sensor leakage current.

  11. CMS Pixel Detector design for HL-LHC

    CERN Document Server

    Migliore, Ernesto

    2016-01-01

    The LHC machine is planning an upgrade program which will smoothly bring the luminosity to about 7.5$\\times$10$^{34}$cm$^{-2}$s$^{-1}$ in 2028, to possibly reach an integrated luminosity of 3000 fb$^{-1}$ by the end of 2037. This High Luminosity scenario, HL-LHC, will present new challenges in higher data rates and increased radiation.In order to maintain its physics reach the CMS Collaboration has undertaken a preparation program of the detector known as Phase-2 upgrade. The CMS Phase-2 Pixel upgrade will require a high bandwidth readout system and high radiation tolerance for sensors and on-detector ASICs. Several technologies for the upgrade sensors are being studied. Serial powering schemes are under consideration to accommodate significant constraints on the system. These prospective designs, as well as new layout geometries that include very forward pixel discs, will be presented together with performance estimations.

  12. Online Calibration and Performance of the ATLAS Pixel Detector

    CERN Document Server

    Keil, M

    2011-01-01

    The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 million electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. This paper describes the tuning and calibration of the optical links and the detector modules, including measurements of threshold, noise, charge measurement, timing performance and the sensor leakage current.

  13. VNR CMS Pixel detector replacement

    CERN Multimedia

    2017-01-01

    Joel Butler, spokesperson of the CMS collaboration explains how a team from many different partner institutes installed a new detector in CMS. This detector is the silicon pixel detector and they’ve been working on it for about five years, to replace one of our existing detectors. This detectors measures particles closer to the beam than any of the other components of this huge detector behind me. It gives us the most precise picture of tracks as they come out of the collisions and expand and travel through the detector. This particular device has twice as many pixels, 120 million, as opposed to about 68 million in the old detector and it can take data faster and pump it out to the analysis more quickly. 00’53’’ Images of the descent, insertion and installation of first piece of the Pixel detector on Tue Feb 28. Images of the descent, insertion and installation of second piece of the Pixel and the two cylinders being joined.

  14. 2D-Visualization of metabolic activity with planar optical chemical sensors (optodes)

    Science.gov (United States)

    Meier, R. J.; Liebsch, G.

    2015-12-01

    Microbia plays an outstandingly important role in many hydrologic compartments, such as e.g. the benthic community in sediments, or biologically active microorganisms in the capillary fringe, in ground water, or soil. Oxygen, pH, and CO2 are key factors and indicators for microbial activity. They can be measured using optical chemical sensors. These sensors record changing fluorescence properties of specific indicator dyes. The signals can be measured in a non-contact mode, even through transparent walls, which is important for many lab-experiments. They can measure in closed (transparent) systems, without sampling or intruding into the sample. They do not consume the analytes while measuring, are fully reversible and able to measure in non-stirred solutions. These sensors can be applied as high precision fiberoptic sensors (for profiling), robust sensor spots, or as planar sensors for 2D visualization (imaging). Imaging enables to detect thousands of measurement spots at the same time and generate 2D analyte maps over a region of interest. It allows for comparing different regions within one recorded image, visualizing spatial analyte gradients, or more important to identify hot spots of metabolic activity. We present ready-to-use portable imaging systems for the analytes oxygen, pH, and CO2. They consist of a detector unit, planar sensor foils and a software for easy data recording and evaluation. Sensors foils for various analytes and measurement ranges enable visualizing metabolic activity or analyte changes in the desired range. Dynamics of metabolic activity can be detected in one shot or over long time periods. We demonstrate the potential of this analytical technique by presenting experiments on benthic disturbance-recovery dynamics in sediments and microbial degradation of organic material in the capillary fringe. We think this technique is a new tool to further understand how microbial and geochemical processes are linked in (not solely) hydrologic

  15. Development of a smartphone application to measure physical activity using sensor-assisted self-report.

    Science.gov (United States)

    Dunton, Genevieve Fridlund; Dzubur, Eldin; Kawabata, Keito; Yanez, Brenda; Bo, Bin; Intille, Stephen

    2014-01-01

    Despite the known advantages of objective physical activity monitors (e.g., accelerometers), these devices have high rates of non-wear, which leads to missing data. Objective activity monitors are also unable to capture valuable contextual information about behavior. Adolescents recruited into physical activity surveillance and intervention studies will increasingly have smartphones, which are miniature computers with built-in motion sensors. This paper describes the design and development of a smartphone application ("app") called Mobile Teen that combines objective and self-report assessment strategies through (1) sensor-informed context-sensitive ecological momentary assessment (CS-EMA) and (2) sensor-assisted end-of-day recall. The Mobile Teen app uses the mobile phone's built-in motion sensor to automatically detect likely bouts of phone non-wear, sedentary behavior, and physical activity. The app then uses transitions between these inferred states to trigger CS-EMA self-report surveys measuring the type, purpose, and context of activity in real-time. The end of the day recall component of the Mobile Teen app allows users to interactively review and label their own physical activity data each evening using visual cues from automatically detected major activity transitions from the phone's built-in motion sensors. Major activity transitions are identified by the app, which cues the user to label that "chunk," or period, of time using activity categories. Sensor-driven CS-EMA and end-of-day recall smartphone apps can be used to augment physical activity data collected by objective activity monitors, filling in gaps during non-wear bouts and providing additional real-time data on environmental, social, and emotional correlates of behavior. Smartphone apps such as these have potential for affordable deployment in large-scale epidemiological and intervention studies.

  16. Development of a Smartphone Application to Measure Physical Activity Using Sensor-Assisted Self-Report

    Directory of Open Access Journals (Sweden)

    Genevieve Fridlund Dunton

    2014-02-01

    Full Text Available Introduction: Despite the known advantages of objective physical activity monitors (e.g., accelerometers, these devices have high rates of non-wear, which leads to missing data. Objective activity monitors are also unable to capture valuable contextual information about behavior. Adolescents recruited into physical activity surveillance and intervention studies will increasingly have smartphones, which are miniature computers with built-in motion sensors. Methods: This paper describes the design and development of a smartphone application (app called Mobile Teen that combines objective and self-report assessment strategies through (1 sensor-informed context-sensitive ecological momentary assessment (CS-EMA and (2 sensor-assisted end-of-day recall.Results: The Mobile Teen app uses the mobile phone’s built-in motion sensor to automatically detect likely bouts of phone non-wear, sedentary behavior, and physical activity. The app then uses transitions between these inferred states to trigger CS-EMA self-report surveys measuring the type, purpose, and context of activity in real time. The end of the day recall component of the Mobile Teen app allows users to interactively review and label their own physical activity data each evening using visual cues from automatically-detected major activity transitions from the phone’s built-in motions sensors. Major activity transitions are identified by the app, which cues the user to label that chunk, or period, of time using activity categories.Conclusions: Sensor-driven CS-EMA and end-of-day recall smartphone apps can be used to augment physical activity data collected by objective activity monitors, filling in gaps during non-wear bouts and providing additional real-time data on environmental, social, and emotional correlates of behavior. Smartphone apps such as these have potential for affordable deployment in large scale epidemiological and intervention studies.

  17. Smart pixels for real-time optical coherence tomography

    Science.gov (United States)

    Beer, Stephan; Zeller, Philipp; Blanc, Nicolas; Lustenberger, Felix; Seitz, Peter

    2004-04-01

    Optical Coherence Tomography (OCT) is an optical imaging technique allowing the acquisition of three-dimensional images with micrometer resolution. It is very well suited to cross-sectional imaging of highly scattering materials, such as most biomedical tissues. A novel custom image sensor based on smart pixels dedicated to parallel OCT (pOCT) is presented. Massively parallel detection and signal processing enables a significant increase in the 3D frame rate and a reduction of the mechanical complexity of the complete setup compared to conventional point-scanning OCT. This renders the parallel OCT technique particularly advantageous for high-speed applications in industrial and biomedical domains while also reducing overall system costs. The sensor architecture presented in this article overcomes the main challenges for OCT using parallel detection such as data rate, power consumption, circuit size, and optical sensitivity. Each pixel of the pOCT sensor contains a low-power signal demodulation circuit allowing the simultaneous detection of the envelope and the phase information of the optical interferometry signal. An automatic photocurrent offset-compensation circuit, a synchronous sampling stage, programmable time averaging, and random pixel accessing are also incorporated at the pixel level. The low-power demodulation principle chosen as well as alternative implementations are discussed. The characterization results of the sensor exhibit a sensitivity of at least 74 dB, which is within 4 dB of the theoretical limit of a shot-noise limited OCT system. Real-time high-resolution three-dimensional tomographic imaging is demonstrated along with corresponding performance measurements.

  18. Development and Integration of Hardware and Software for Active-Sensors in Structural Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Overly, Timothy G.S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2007-01-01

    Structural Health Monitoring (SHM) promises to deliver great benefits to many industries. Primarily among them is a potential for large cost savings in maintenance of complex structures such as aircraft and civil infrastructure. However, several large obstacles remain before widespread use on structures can be accomplished. The development of three components would address many of these obstacles: a robust sensor validation procedure, a low-cost active-sensing hardware and an integrated software package for transition to field deployment. The research performed in this thesis directly addresses these three needs and facilitates the adoption of SHM on a larger scale, particularly in the realm of SHM based on piezoelectric (PZT) materials. The first obstacle addressed in this thesis is the validation of the SHM sensor network. PZT materials are used for sensor/actuators because of their unique properties, but their functionality also needs to be validated for meaningful measurements to be recorded. To allow for a robust sensor validation algorithm, the effect of temperature change on sensor diagnostics and the effect of sensor failure on SHM measurements were classified. This classification allowed for the development of a sensor diagnostic algorithm that is temperature invariant and can indicate the amount and type of sensor failure. Secondly, the absence of a suitable commercially-available active-sensing measurement node is addressed in this thesis. A node is a small compact measurement device used in a complete system. Many measurement nodes exist for conventional passive sensing, which does not actively excite the structure, but there are no measurement nodes available that both meet the active-sensing requirements and are useable outside the laboratory. This thesis develops hardware that is low-power, active-sensing and field-deployable. This node uses the impedance method for SHM measurements, and can run the sensor diagnostic algorithm also developed here

  19. Real-time brain activity measurement and signal processing system using highly sensitive MI sensor

    Directory of Open Access Journals (Sweden)

    Kewang Wang

    2017-05-01

    Full Text Available Superconducting Quantum Interference Devices (SQUIDs are the most used sensor to detect the extremely weak magnetic field of brain. However, the sensor heads need to be kept at very low temperature to maintain superconductivity, and that makes the devices large-scale and inconvenient. In order to measure brain activity in normal environment, we had constructed a measurement system based on highly sensitive Magneto-Impedance (MI sensor, and reported the study of measuring Auditory Evoked Field (AEF brain waves. In this study, the system was improved, and the sensor signals can be processed in real-time to monitor brain activity. We use this system to measure the alpha rhythm in the occipital region and the Event-Related Field (ERF P300 in the frontal, the parietal and both the temporal regions.

  20. Sensitivity-Enhanced Wearable Active Voiceprint Sensor Based on Cellular Polypropylene Piezoelectret.

    Science.gov (United States)

    Li, Wenbo; Zhao, Sheng; Wu, Nan; Zhong, Junwen; Wang, Bo; Lin, Shizhe; Chen, Shuwen; Yuan, Fang; Jiang, Hulin; Xiao, Yongjun; Hu, Bin; Zhou, Jun

    2017-07-19

    Wearable active sensors have extensive applications in mobile biosensing and human-machine interaction but require good flexibility, high sensitivity, excellent stability, and self-powered feature. In this work, cellular polypropylene (PP) piezoelectret was chosen as the core material of a sensitivity-enhanced wearable active voiceprint sensor (SWAVS) to realize voiceprint recognition. By virtue of the dipole orientation control method, the air layers in the piezoelectret were efficiently utilized, and the current sensitivity was enhanced (from 1.98 pA/Hz to 5.81 pA/Hz at 115 dB). The SWAVS exhibited the superiorities of high sensitivity, accurate frequency response, and excellent stability. The voiceprint recognition system could make correct reactions to human voices by judging both the password and speaker. This study presented a voiceprint sensor with potential applications in noncontact biometric recognition and safety guarantee systems, promoting the progress of wearable sensor networks.