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Sample records for active cmos microarray

  1. A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS.

    Science.gov (United States)

    Hall, Drew A; Gaster, Richard S; Makinwa, Kofi; Wang, Shan X; Murmann, Boris

    2013-05-01

    Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm(2)) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring.

  2. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  3. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-An; ZHANG Dong-Wei; HE Jin; SU Yan-Mei; WANG Cheng; CHEN Qin; LIANG Hai-Lang; YE Yun

    2012-01-01

    A single-transistor CMOS active pixel image sensor (1T CMOS APS) architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus,the reset and selected transistors can be removed. In addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill factor.The pixel design and operation principles are discussed in detail.The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology.

  4. New Active Digital Pixel Circuit for CMOS Image Sensor

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.

  5. CMOS VLSI Active-Pixel Sensor for Tracking

    Science.gov (United States)

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  6. A CMOS active pixel sensor for retinal stimulation

    Science.gov (United States)

    Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

    2006-02-01

    Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

  7. Microarray of programmable electrochemically active elements

    DEFF Research Database (Denmark)

    McCaskill, John; Maeke, Thomas; Straczek, Lukas

    Possible applications of the MICREAgents Dock, a two dimensional array of programmable electrochemically active elements, to Alife.......Possible applications of the MICREAgents Dock, a two dimensional array of programmable electrochemically active elements, to Alife....

  8. Development of radiation hard CMOS active pixel sensors for HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Pernegger, Heinz, E-mail: heinz.pernegger@cern.ch

    2016-07-11

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  9. Targeted deposition of antibodies on a multiplex CMOS microarray and optimization of a sensitive immunoassay using electrochemical detection.

    Directory of Open Access Journals (Sweden)

    John Cooper

    Full Text Available BACKGROUND: The CombiMatrix ElectraSense microarray is a highly multiplex, complementary metal oxide semiconductor with 12,544 electrodes that are individually addressable. This platform is commercially available as a custom DNA microarray; and, in this configuration, it has also been used to tether antibodies (Abs specifically on electrodes using complementary DNA sequences conjugated to the Abs. METHODOLOGY/PRINCIPAL FINDINGS: An empirical method is described for developing and optimizing immunoassays on the CombiMatrix ElectraSense microarray based upon targeted deposition of polypyrrole (Ppy and capture Ab. This process was automated using instrumentation that can selectively apply a potential or current to individual electrodes and also measure current generated at the electrodes by an enzyme-enhanced electrochemical (ECD reaction. By designating groups of electrodes on the array for different Ppy deposition conditions, we determined that the sensitivity and specificity of a sandwich immunoassay for staphylococcal enterotoxin B (SEB is influenced by the application of different voltages or currents and the application time. The sandwich immunoassay used a capture Ab adsorbed to the Ppy and a reporter Ab labeled for fluorescence detection or ECD, and results from these methods of detection were different. CONCLUSIONS/SIGNIFICANCE: Using Ppy deposition conditions for optimum results, the lower limit of detection for SEB using the ECD assay was between 0.003 and 0.01 pg/ml, which represents an order of magnitude improvement over a conventional enzyme-linked immunosorbant assay. In the absence of understanding the variables and complexities that affect assay performance, this highly multiplexed electrode array provided a rapid, high throughput, and empirical approach for developing a sensitive immunoassay.

  10. Microarray of programmable electrochemically active elements

    DEFF Research Database (Denmark)

    S. McCaskill, John; Maeke, Thomas; Straczek, Lukas;

    2016-01-01

    This paper describes possible applications of a two dimensional array of programmable electrochemically active elements to Alife. The array has been developed as part of the MICREA-gents project, and after several design phases, is now a mature enough device for general use beyond the project. Here...

  11. Microarray of programmable electrochemically active elements

    DEFF Research Database (Denmark)

    S. McCaskill, John; Maeke, Thomas; Straczek, Lukas

    2016-01-01

    This paper describes possible applications of a two dimensional array of programmable electrochemically active elements to Alife. The array has been developed as part of the MICREA-gents project, and after several design phases, is now a mature enough device for general use beyond the project. Here...

  12. Determination of strongly overlapping signaling activity from microarray data

    Directory of Open Access Journals (Sweden)

    Bidaut Ghislain

    2006-02-01

    Full Text Available Abstract Background As numerous diseases involve errors in signal transduction, modern therapeutics often target proteins involved in cellular signaling. Interpretation of the activity of signaling pathways during disease development or therapeutic intervention would assist in drug development, design of therapy, and target identification. Microarrays provide a global measure of cellular response, however linking these responses to signaling pathways requires an analytic approach tuned to the underlying biology. An ongoing issue in pattern recognition in microarrays has been how to determine the number of patterns (or clusters to use for data interpretation, and this is a critical issue as measures of statistical significance in gene ontology or pathways rely on proper separation of genes into groups. Results Here we introduce a method relying on gene annotation coupled to decompositional analysis of global gene expression data that allows us to estimate specific activity on strongly coupled signaling pathways and, in some cases, activity of specific signaling proteins. We demonstrate the technique using the Rosetta yeast deletion mutant data set, decompositional analysis by Bayesian Decomposition, and annotation analysis using ClutrFree. We determined from measurements of gene persistence in patterns across multiple potential dimensionalities that 15 basis vectors provides the correct dimensionality for interpreting the data. Using gene ontology and data on gene regulation in the Saccharomyces Genome Database, we identified the transcriptional signatures of several cellular processes in yeast, including cell wall creation, ribosomal disruption, chemical blocking of protein synthesis, and, criticially, individual signatures of the strongly coupled mating and filamentation pathways. Conclusion This works demonstrates that microarray data can provide downstream indicators of pathway activity either through use of gene ontology or transcription

  13. Phenotype microarray profiling of the antibacterial activity of red cabbage

    Directory of Open Access Journals (Sweden)

    Hafidh RR

    2012-06-01

    Full Text Available Background: Functional food can be a potent source of wide array of biocomonents with antimicrobial activity. We investigated the antibacterial activity of red cabbage (RC extract on Gram negative and positive ATCC strains. Most intersting, we, for the first time, explored and analysed the complete phenotypic profile of RC-treated bacteria using Omnilog Phenotype Microarray. Results: This study revealed that the phenotype microarray (PM screen was a valuable tool in the search for compounds and their antibacterial mechanisms that can inhibit bacterial growth by affecting certain metabolic pathways. It was shown that RC exerted remarkable antibacterial effect on S. aureus and E. coli bacteria, and PM showed a wide range phenotypic profile of the exerted RC antibacterial activity. RC targeted the peptide, carbon, nutriontional assembly, and sulfur metbolic pathways altogether. The peptidoglycan synthesis pathway was inferred to be targeted by RC extract at a metabolic point different from other available cell wall-targeting drugs; these could be hot targets for the discovery of new therapy for many problematic microbes.Conclusions: Taken together, the phenotype microarray for functional food and medicinal plants can be a very useful tool for profiling their antimicrobial activity. Moreover, extracts of functional food can exert antibacterial activity by hitting a wide range of metabolic pathways, at the same time leading to very difficult condition for bacteria to rapidly develop resistance. Therefore, using functional foods or medicinal plants as such, or as extracts, can be superior on mono-targeting antibiotics if the optimal concentrations and conditions of these functional foods were sought.

  14. Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

    CERN Document Server

    Deveaux, M; Besson, A; Claus, G; Colledani, C; Dorokhov, M; Dritsa, C; Dulinski, W; Fröhlich, I; Goffe, M; Grandjean, D; Heini, S; Himmi, A; Hu, C; Jaaskelainen, K; Müntz, C; Shabetai, A; Stroth, J; Szelezniak, M; Valin, I; Winter, M

    2009-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad

  15. Passive radiation detection using optically active CMOS sensors

    Science.gov (United States)

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  16. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    Science.gov (United States)

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-07

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  17. Wideband CMOS low noise amplifier including an active balun

    NARCIS (Netherlands)

    Blaakmeer, S.C.; Klumperink, Eric A.M.; Leenaerts, D.M.W.; Nauta, Bram

    2007-01-01

    An inductorless LNA with active balun is proposed for multi-standard radio applications between 100MHz and 6GHz [1]. It exploits a combination of a common-gate (CG) stage and an common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and

  18. Assessing Design Activity in Complex CMOS Circuit Design.

    Science.gov (United States)

    Biswas, Gautam; And Others

    This report characterizes human problem solving in digital circuit design. Protocols of 11 different designers with varying degrees of training were analyzed by identifying the designers' problem solving strategies and discussing activity patterns that differentiate the designers. These methods are proposed as a tentative basis for assessing…

  19. Wide tuning-range CMOS VCO based on a tunable active inductor

    Science.gov (United States)

    Babaei Kia, Hojjat; Khari A'ain, Abu; Grout, Ian

    2014-01-01

    In this paper, a wide tuning-range CMOS voltage-controlled oscillator (VCO) with high output power using an active inductor circuit is presented. In this VCO design, the coarse frequency is achieved by tuning the integrated active inductor. The circuit has been simulated using a 0.18-µm CMOS fabrication process and presents output frequency range from 100 MHz to 2.5 GHz, resulting in a tuning range of 96%. The phase noise is -85 dBc/Hz at a 1 MHz frequency offset. The output power is from -3 dBm at 2.55 GHz to +14 dBm at 167 MHz. The active inductor power dissipation is 6.5 mW and the total power consumption is 16.27 mW when operating on a 1.8 V supply voltage. By comparing this active inductor architecture VCO with general VCO topology, the result shows that this topology, which employs the proposed active inductor, produces a better performance.

  20. Which Members of the Microbial Communities Are Active? Microarrays

    Science.gov (United States)

    Morris, Brandon E. L.

    only at the early stages of understanding the microbial processes that occur in petroliferous formations and the surrounding subterranean environment. Important first steps in characterising the microbiology of oilfield systems involve identifying the microbial community structure and determining how population diversity changes are affected by the overall geochemical and biological parameters of the system. This is relatively easy to do today by using general 16S rRNA primers for PCR and building clone libraries. For example, previous studies using molecular methods characterised many dominant prokaryotes in petroleum reservoirs (Orphan et al., 2000) and in two Alaskan North Slope oil facilities (Duncan et al., 2009; Pham et al., 2009). However, the problem is that more traditional molecular biology approaches, such as 16S clone libraries, fail to detect large portions of the community perhaps missing up to half of the biodiversity (see Hong et al., 2009) and require significant laboratory time to construct large libraries necessary to increase the probability of detecting the majority of even bacterial biodiversity. In the energy sector, the overarching desire would be to quickly assess the extent of in situ hydrocarbon biodegradation or to disrupt detrimental processes such as biofouling, and in these cases it may not be necessary to identify specific microbial species. Rather, it would be more critical to evaluate metabolic processes or monitor gene products that are implicated in the specific activity of interest. Research goals such as these are well suited for a tailored application of microarray technology.

  1. A CMOS Active Pixel Sensor for Charged Particle Detection

    Energy Technology Data Exchange (ETDEWEB)

    Matis, Howard S.; Bieser, Fred; Kleinfelder, Stuart; Rai, Gulshan; Retiere, Fabrice; Ritter, Hans George; Singh, Kunal; Wurzel, Samuel E.; Wieman, Howard; Yamamoto, Eugene

    2002-12-02

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

  2. Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

    Science.gov (United States)

    Fossum, E.; Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Zhou, Z.; Ackland, B.; Dickinson, A.; Eid, E.; Inglis, D.

    1994-01-01

    This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.

  3. Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

    CERN Document Server

    Rymaszewski, Piotr; Breugnon, Patrick; Godiot, Stépahnie; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Hügging, Fabian; Krüger, Hans; Liu, Jian; Pangaud, Patrick; Peric, Ivan; Rozanov, Alexandre; Wang, Anqing; Wermes, Norbert

    2016-01-01

    The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

  4. Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

    Directory of Open Access Journals (Sweden)

    Ler Chun Lee

    2008-01-01

    Full Text Available A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA. A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

  5. An investigation into the use of CMOS active pixel technology in image-guided radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Osmond, J P F; Holland, A D [School of Engineering and Design, Brunel University, Uxbridge, UB8 3PH (United Kingdom); Harris, E J; Ott, R J; Evans, P M [Joint Department of Physics, Institute of Cancer Research and Royal Marsden NHS Trust, Downs Road, Sutton, Surrey, SM2 5PT (United Kingdom); Clark, A T [Science and Technology Facilities Council, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Didcot, OX11 0QX (United Kingdom)], E-mail: john.osmond@brunel.ac.uk

    2008-06-21

    The increased intelligence, read-out speed, radiation hardness and potential large size of CMOS active pixel sensors (APS) gives them a potential advantage over systems currently used for verification of complex treatments such as IMRT and the tracking of moving tumours. The aim of this work is to investigate the feasibility of using an APS-based system to image the megavoltage treatment beam produced by a linear accelerator (Linac), and to demonstrate the logic which may ultimately be incorporated into future sensor and FPGA design to evaluate treatment and track motion. A CMOS APS was developed by the MI{sup 3} consortium and incorporated into a megavoltage imaging system using the standard lens and mirror configuration employed in camera-based EPIDs. The ability to resolve anatomical structure was evaluated using an Alderson RANDO head phantom, resolution evaluated using a quality control (QC3) phantom and contrast using an in-house developed phantom. A complex intensity-modulated radiotherapy (IMRT) treatment was imaged and two algorithms were used to determine the field-area and delivered dose, and the position of multi-leaf collimator (MLC) leaves off-line. Results were compared with prediction from the prescription and found to agree within a single image frame time for dose delivery and 0.02-0.03 cm for the position of collimator leaves. Such a system therefore shows potential as the basis for an on-line verification system capable of treatment verification and monitoring patient motion.

  6. On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

    CERN Document Server

    Deveaux, M; Dorokhov, A; Doering, D; Heymes, J; Kachel, M; Koziel, M; Linnik, B; Müntz, C; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is fo...

  7. Towards monolithically integrated CMOS cameras for active imaging with 600 GHz radiation

    Science.gov (United States)

    Boppel, Sebastian; Lisauskas, Alvydas; Krozer, Viktor; Roskos, Hartmut G.

    2012-02-01

    We explore terahertz imaging with CMOS field-effect transistors exploiting their plasmonic detection capability and the advantages of CMOS technology for the fabrication of THz cameras with respect to process stability, array uniformity, ease of integration of additional functionality, scalability and cost-effectiveness. A 100×100-pixel camera with an active area of 20×20 mm² is physically simulated by scanning single detectors and groups of a few detectors in the image plane. Using detectors with a noise-equivalent power of 43 pW/√Hz, a distributed illumination of 432 μW at 591.4 GHz, and an integration time of 20 ms (for a possible frame rate of 17 fps), this virtual camera allows to obtain images with a dynamic range of at least 20 dB and a resolution approaching the diffraction limit. Imaging examples acquired in direct and heterodyne detection mode, and in transmission and reflection geometry, show the potential for real-time operation. It is demonstrated that heterodyning (i) improves the dynamic range substantially even if the radiation from the local oscillator is distributed over the camera area, and (ii) allows sensitive determination of object-induced phase changes, which promises the realization of coherent imaging systems.

  8. A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus S.; Johansen, Tom K.; Tamborg, Kjeld M.

    2015-01-01

    In this paper, we present an X-band doublebalanced mixer in SiGe BiCMOS technology. The mixer core consists of a LO Matched quad diode ring using diode-connected Heterojunction Bipolar Transistors (HBTs). The mixer is integrated with a low-noise, high-linearity active balun on the RF port and a m...

  9. Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver

    Directory of Open Access Journals (Sweden)

    Mohammad A.S. Bhuiyan

    2016-06-01

    Full Text Available Modern Radio Frequency (RF transceivers cannot be imagined without high-performance (Transmit/Receive T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB and linearity (IIP3 which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.

  10. A Wide Tuning-Range CMOS VCO with a Tunable Active Inductor

    Directory of Open Access Journals (Sweden)

    Hsuan-Ling Kao

    2015-01-01

    Full Text Available This study describes a wide tuning-range VCO using tunable active inductor (TAI topology and cross-coupled pair configuration for radio frequency operation. The TAI used two feedback loops to form a cascode circuit to obtain more degrees of freedom for inductance value. The TAI-VCO was fabricated using a 0.18 μm CMOS technology. The coarse frequency tuning is achieved by TAIs while the fine tuning is controlled by varactors. The fabricated circuit provides an output frequency range from 0.6 to 7.2 GHz (169%. The measured phase noise is from −110.38 to −86.01 dBc/Hz at a 1 MHz offset and output power is from −11.11 to −3.89 dBm within the entire frequency range under a 1.8 V power supply.

  11. Improved Design of Active Pixel CMOS Sensors for Charged Particle Detection

    Energy Technology Data Exchange (ETDEWEB)

    Deptuch, Grzegorz

    2007-11-12

    The Department of Energy (DOE) nuclear physics program requires developments in detector instrumentation electronics with improved energy, position and timing resolution, sensitivity, rate capability, stability, dynamic range, and background suppression. The current Phase-I project was focused on analysis of standard-CMOS photogate Active Pixel Sensors (APS) as an efficient solution to this challenge. The advantages of the CMOS APS over traditional hybrid approaches (i.e., separate detection regions bump-bonded to readout circuits) include greatly reduced cost, low power and the potential for vastly larger pixel counts and densities. However, challenges remain in terms of the signal-to-noise ratio (SNR) and readout speed (currently on the order of milliseconds), which is the major problem for this technology. Recent work has shown that the long readout time for photogate APS is due to the presence of (interface) traps at the semiconductor-oxide interface. This Phase-I work yielded useful results in two areas: (a) Advanced three-dimensional (3D) physics-based simulation models and simulation-based analysis of the impact of interface trap density on the transient charge collection characteristics of existing APS structures; and (b) Preliminary analysis of the feasibility of an improved photogate pixel structure (i.e., new APS design) with an induced electric field under the charge collecting electrode to enhance charge collection. Significant effort was dedicated in Phase-I to the critical task of implementing accurate interface trap models in CFDRC's NanoTCAD 3D semiconductor device-physics simulator. This resulted in validation of the new NanoTCAD models and simulation results against experimental (published) data, within the margin of uncertainty associated with obtaining device geometry, material properties, and experimentation details. Analyses of the new, proposed photogate APS design demonstrated several promising trends.

  12. Development and application of the active surveillance of pathogens microarray to monitor bacterial gene flux

    Directory of Open Access Journals (Sweden)

    Hinds Jason

    2008-10-01

    Full Text Available Abstract Background Human and animal health is constantly under threat by emerging pathogens that have recently acquired genetic determinants that enhance their survival, transmissibility and virulence. We describe the construction and development of an Active Surveillance of Pathogens (ASP oligonucleotide microarray, designed to 'actively survey' the genome of a given bacterial pathogen for virulence-associated genes. Results The microarray consists of 4958 reporters from 151 bacterial species and include genes for the identification of individual bacterial species as well as mobile genetic elements (transposons, plasmid and phage, virulence genes and antibiotic resistance genes. The ASP microarray was validated with nineteen bacterial pathogens species, including Francisella tularensis, Clostridium difficile, Staphylococcus aureus, Enterococcus faecium and Stenotrophomonas maltophilia. The ASP microarray identified these bacteria, and provided information on potential antibiotic resistance (eg sufamethoxazole resistance and sulfonamide resistance and virulence determinants including genes likely to be acquired by horizontal gene transfer (e.g. an alpha-haemolysin. Conclusion The ASP microarray has potential in the clinic as a diagnostic tool, as a research tool for both known and emerging pathogens, and as an early warning system for pathogenic bacteria that have been recently modified either naturally or deliberately.

  13. Active pixel sensors in AMS H18/H35 HV-CMOS technology for the ATLAS HL-LHC upgrade

    Science.gov (United States)

    Ristic, Branislav

    2016-09-01

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement signal processing electronics in deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150 V leading to a depletion depth of several 10 μm. Prototype sensors in the AMS H18 180 nm and H35 350 nm HV-CMOS processes were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiations with X-rays and protons revealed a tolerance to ionizing doses of 1 Grad while Edge-TCT studies assessed the effects of radiation on the charge collection. The sensors showed high detection efficiencies after neutron irradiation to 1015neq cm-2 in testbeam experiments. A full reticle size demonstrator chip, implemented in the H35 process is being submitted to prove the large scale feasibility of the HV-CMOS concept.

  14. Peptide microarrays for the profiling of cytotoxic T-lymphocyte activity using minimum numbers of cells.

    NARCIS (Netherlands)

    Hoff, A.; Bagu, A.C.; Andre, T.; Roth, G.; Wiesmuller, K.H.; Guckel, B.; Brock, R.E.

    2010-01-01

    The identification of epitopes that elicit cytotoxic T-lymphocyte activity is a prerequisite for the development of cancer-specific immunotherapies. However, especially the parallel characterization of several epitopes is limited by the availability of T cells. Microarrays have enabled an unpreceden

  15. Nano CMOS

    Directory of Open Access Journals (Sweden)

    Malay Ranjan Tripathy

    2009-05-01

    Full Text Available Complementary metal-oxide-semiconductor (CMOS has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discussed in this article. The challenges and opportunities of nano CMOS technology are outlined here.

  16. Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology

    Science.gov (United States)

    Kishishita, T.; Hemperek, T.; Rymaszewski, P.; Hirono, T.; Krüger, H.; Wermes, N.

    2016-07-01

    We present the recent development of DMAPS (Depleted Monolithic Active Pixel Sensor), implemented with a Toshiba 130 nm CMOS process. Unlike in the case of standard MAPS technologies which are based on an epi-layer, this process provides a high-resistive substrate that enables larger signal and faster charge collection by drift in a 50 - 300 μm thick depleted layer. Since this process also enables the use of deep n-wells to isolate the collection electrodes from the thin active device layer, NMOS and PMOS transistors are available for the readout electronics in each pixel cell. In order to characterize the technology, we implemented a simple three transistor readout with a variety of pixel pitches and input FET sizes. This layout variety gives us a clue on sensor characteristics for future optimization, such as the input detector capacitance or leakage current. In the initial measurement, the radiation spectra were obtained from 55Fe with an energy resolution of 770 eV (FWHM) and 90Sr with the MVP of 4165 e-.

  17. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation

    Institute of Scientific and Technical Information of China (English)

    Zhou Qianneng; Wang Yongsheng; Lai Fengchang

    2009-01-01

    A capacitor-free CMOS low-dropout(LDO)regulator for system-on-chip(SoC)applications is presented.By adopting AC-boosting and active-feedback frequency compensation(ACB-AFFC),the proposed LDO enhancement circuit is adopted to increase the slew rate and decrease the output voltage dips when the load current is suddenly switched from low to high.The LDO regulator is designed and fabricated in a 0.6/am CMOS process.The active silicon area is only 770×472μm2.Experimental results show that the total error of the output voltage due to line variation is less than ±0.1 97%.The load regulation is only 0.35 mV/mA when the load current changes fromoto 100mA.

  18. Nano CMOS

    OpenAIRE

    2009-01-01

    Complementary metal-oxide-semiconductor (CMOS) has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discu...

  19. Effect and suppression of parasitic surface damage in neutron irradiated CMOS Monolithic Active Pixel Sensors

    CERN Document Server

    Deveaux, M; Scharrer, P; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those applications require a substantial tolerance to both, ionizing and non-ionizing radiation. To allow for a focused optimization of the radiation tolerance, prototypes are tested by irradiating the devices either with purely ionizing radiation (e.g. soft X-rays) or the most pure sources of non-ionizing radiation available (e.g. reactor neutrons). In the second case, it is typically assumed that the impact of the parasitic $\\gamma$-rays found in the neutron beams is negligible. We checked this assumption by irradiating MAPS with $\\gamma$-rays and comparing the radiation damage generated with the one in neutron irradiated sensors. We conclude that the parasitic radiation doses may cause non-negligible radiation damage. Based on the results we propose a procedure to recognize and to ...

  20. Integrated Circuit of CMOS DC-DC Buck Converter with Differential Active Inductor

    Directory of Open Access Journals (Sweden)

    Kaoutar Elbakkar

    2011-11-01

    Full Text Available In this paper, we propose a new design of DC-DC buck converter (BC, which the spiral inductor is replaced by a differential gyrator with capacitor load (gyrator-C implemented in 0.18um CMOS process. The gyrator-C transforms the capacitor load (which is the parasitic capacitor of MOSFETS to differential active inductor DAI. The low-Q value of DAI at switching frequency of converter (few hundred kHz is boosted by adding a negative impedance converter (NIC. The transistor parameters of DAI and NIC can be properly chosen to achieve the desirable value of equivalent inductance L (few tens H, and the maximum-Q value at the switching frequency, and thus the efficiency of converter is improved. Experimental results show that the converter supplied with an input voltage of 1V, provides an output voltage of 0.74V and output ripple voltage of 10mV at 155 kHz and Q-value is maximum (#8776;4226 at this frequency.

  1. Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

    CERN Document Server

    Battaglia, Marco; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-01-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease o...

  2. Characterisation of a CMOS active pixel sensor for use in the TEAM microscope

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, Marco, E-mail: MBattaglia@lbl.go [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Santa Cruz Institute of Particle Physics, University of California at Santa Cruz, CA 95064 (United States); Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Giubilato, Piero [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Dipartimento di Fisica, Universita degli Studi, Padova I-35131 (Italy); Gnani, Dario; Radmilovic, Velimir [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-10-21

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5{mu}m{sup 2} pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 and 300 keV electrons is (12.1{+-}0.7) and (7.4{+-}0.6){mu}m, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78{+-}0.04 at 80 keV and 0.74{+-}0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 and 300 keV electrons becomes (6.7{+-}0.3) and (2.4{+-}0.2){mu}m, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by {approx_equal}30%, corresponding to a reduction in full-well depth from {approx}39 to {approx}27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

  3. The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications

    Science.gov (United States)

    Konstantinidis, Anastasios C.; Szafraniec, Magdalena B.; Speller, Robert D.; Olivo, Alessandro

    2012-10-01

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacity and dynamic range. The latter, which included measuring X-ray sensitivity, presampling modulation transfer function (pMTF), noise power spectrum (NPS) and the resulting detective quantum efficiency (DQE), was assessed under three beam qualities (28 kV, 50 kV (RQA3) and 70 kV (RQA5) using W/Al) all in accordance with the IEC standard. The detector features an in-pixel option for switching the full well capacity between two distinct modes, high full well (HFW) and low full well (LFW). Two structured CsI:Tl scintillators of different thickness (a “thin” one for high resolution and a thicker one for high light efficiency) were optically coupled to the sensor array to optimize the performance of the system for different medical applications. The electro-optical performance evaluation of the sensor results in relatively high read noise (∼360 e-), high full well capacity (∼1.5×106 e-) and wide dynamic range (∼73 dB) under HFW mode operation. When the LFW mode is used, the read noise is lower (∼165) at the expense of a reduced full well capacity (∼0.5×106 e-) and dynamic range (∼69 dB). The maximum DQE values at low frequencies (i.e. 0.5 lp/mm) are high for both HFW (0.69 for 28 kV, 0.71 for 50 kV and 0.75 for 70 kV) and LFW (0.69 for 28 kV and 0.7 for 50 kV) modes. The X-ray performance of the studied detector compares well to that of other mammography and general radiography systems, obtained under similar experimental conditions. This demonstrates the suitability

  4. Linear analysis of signal and noise characteristics of a nonlinear CMOS active-pixel detector for mammography

    Science.gov (United States)

    Yun, Seungman; Kim, Ho Kyung; Han, Jong Chul; Kam, Soohwa; Youn, Hanbean; Cunningham, Ian A.

    2017-03-01

    The imaging properties of a complementary metal-oxide-semiconductor (CMOS) active-pixel photodiode array coupled to a thin gadolinium-based granular phosphor screen with a fiber-optic faceplate are investigated. It is shown that this system has a nonlinear response at low detector exposure levels (<10 mR), resulting in an over-estimation of the detective quantum efficiency (DQE) by a factor of two in some cases. Errors in performance metrics on this scale make it difficult to compare new technologies with established systems and predict performance benchmarks that can be achieved in practice and help understand performance bottlenecks. It is shown the CMOS response is described by a power-law model that can be used to linearize image data. Linearization removed an unexpected dependence of the DQE on detector exposure level.

  5. Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

    CERN Document Server

    Ristic, Branislav

    2016-01-01

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

  6. Large area CMOS active pixel sensor x-ray imager for digital breast tomosynthesis: Analysis, modeling, and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu [Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Konstantinidis, Anastasios C. [Department of Medical Physics and Biomedical Engineering, University College London, London WC1E 6BT, United Kingdom and Diagnostic Radiology and Radiation Protection, Christie Medical Physics and Engineering, The Christie NHS Foundation Trust, Manchester M20 4BX (United Kingdom); Patel, Tushita [Department of Physics, University of Virginia, Charlottesville, Virginia 22908 (United States)

    2015-11-15

    Purpose: Large area x-ray imagers based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been proposed for various medical imaging applications including digital breast tomosynthesis (DBT). The low electronic noise (50–300 e{sup −}) of CMOS APS x-ray imagers provides a possible route to shrink the pixel pitch to smaller than 75 μm for microcalcification detection and possible reduction of the DBT mean glandular dose (MGD). Methods: In this study, imaging performance of a large area (29 × 23 cm{sup 2}) CMOS APS x-ray imager [Dexela 2923 MAM (PerkinElmer, London)] with a pixel pitch of 75 μm was characterized and modeled. The authors developed a cascaded system model for CMOS APS x-ray imagers using both a broadband x-ray radiation and monochromatic synchrotron radiation. The experimental data including modulation transfer function, noise power spectrum, and detective quantum efficiency (DQE) were theoretically described using the proposed cascaded system model with satisfactory consistency to experimental results. Both high full well and low full well (LFW) modes of the Dexela 2923 MAM CMOS APS x-ray imager were characterized and modeled. The cascaded system analysis results were further used to extract the contrast-to-noise ratio (CNR) for microcalcifications with sizes of 165–400 μm at various MGDs. The impact of electronic noise on CNR was also evaluated. Results: The LFW mode shows better DQE at low air kerma (K{sub a} < 10 μGy) and should be used for DBT. At current DBT applications, air kerma (K{sub a} ∼ 10 μGy, broadband radiation of 28 kVp), DQE of more than 0.7 and ∼0.3 was achieved using the LFW mode at spatial frequency of 0.5 line pairs per millimeter (lp/mm) and Nyquist frequency ∼6.7 lp/mm, respectively. It is shown that microcalcifications of 165–400 μm in size can be resolved using a MGD range of 0.3–1 mGy, respectively. In comparison to a General Electric GEN2 prototype DBT system (at

  7. Active High Power Conversion Efficiency Rectifier With Built-In Dual-Mode Back Telemetry in Standard CMOS Technology.

    Science.gov (United States)

    Bawa, G; Ghovanloo, M

    2008-09-01

    In this paper, we present an active rectifier with high power conversion efficiency (PCE) implemented in a 0.5- mum 5 V standard CMOS technology with two modes of built-in back telemetry; short- and open-circuit. As a rectifier, it ensures a PCE > 80%, taking advantage of active synchronous rectification technique in the frequency range of 0.125-1 MHz. The built-in complementary back telemetry feature can be utilized in implantable microelectronic devices (IMD), wireless sensors, and radio frequency identification (RFID) applications to reduce the silicon area, increase the data rate, and improve the reading range and robustness in load shift keying (LSK).

  8. A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

    OpenAIRE

    2015-01-01

    In this paper, we present an X-band doublebalanced mixer in SiGe BiCMOS technology. The mixer core consists of a LO Matched quad diode ring using diode-connected Heterojunction Bipolar Transistors (HBTs). The mixer is integrated with a low-noise, high-linearity active balun on the RF port and a miniaturized Marchand balun on the LO port. Experimental results shows a conversion gain of +4 dB at 10.5 GHz with an LO drive level of 15 dBm. The LO-IF and RF-IF isolation is better than 36 dB and 26...

  9. A rad-hard CMOS active pixel sensor for electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Battaglia, Marco [Department of Physics, University of California at Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)], E-mail: MBattaglia@lbl.gov; Contarato, Devis; Denes, Peter; Doering, Dionisio [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Giubilato, Piero [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); INFN, Sezione di Padova, I-35131 (Italy); Dipartimento di Fisica, Universita degli Studi, Padova I-35131 (Italy); Kim, Tae Sung [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Mattiazzo, Serena [INFN, Sezione di Padova, I-35131 (Italy); Dipartimento di Fisica, Universita degli Studi, Padova I-35131 (Italy); Radmilovic, Velimir [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Zalusky, Sarah [Department of Physics, University of California at Berkeley, CA 94720 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2009-01-11

    Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 Mrad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1{+-}1.6){mu}m for 10{mu}m pixel and (10.9{+-}2.3){mu}m for 20{mu}m pixels, respectively, which agrees well with the values of 8.4 and 10.5{mu}m predicted by our simulation.

  10. Wavelet-based detection of transcriptional activity on a novel Staphylococcus aureus tiling microarray

    Directory of Open Access Journals (Sweden)

    Segura Víctor

    2012-09-01

    Full Text Available Abstract Background High-density oligonucleotide microarray is an appropriate technology for genomic analysis, and is particulary useful in the generation of transcriptional maps, ChIP-on-chip studies and re-sequencing of the genome.Transcriptome analysis of tiling microarray data facilitates the discovery of novel transcripts and the assessment of differential expression in diverse experimental conditions. Although new technologies such as next-generation sequencing have appeared, microarrays might still be useful for the study of small genomes or for the analysis of genomic regions with custom microarrays due to their lower price and good accuracy in expression quantification. Results Here, we propose a novel wavelet-based method, named ZCL (zero-crossing lines, for the combined denoising and segmentation of tiling signals. The denoising is performed with the classical SUREshrink method and the detection of transcriptionally active regions is based on the computation of the Continuous Wavelet Transform (CWT. In particular, the detection of the transitions is implemented as the thresholding of the zero-crossing lines. The algorithm described has been applied to the public Saccharomyces cerevisiae dataset and it has been compared with two well-known algorithms: pseudo-median sliding window (PMSW and the structural change model (SCM. As a proof-of-principle, we applied the ZCL algorithm to the analysis of the custom tiling microarray hybridization results of a S. aureus mutant deficient in the sigma B transcription factor. The challenge was to identify those transcripts whose expression decreases in the absence of sigma B. Conclusions The proposed method archives the best performance in terms of positive predictive value (PPV while its sensitivity is similar to the other algorithms used for the comparison. The computation time needed to process the transcriptional signals is low as compared with model-based methods and in the same range to those

  11. Development of CMOS Monolithic Active Pixel Sensors for the ALICE-ITS Outer Barrel and for the CBM-MVD

    CERN Document Server

    Deveaux, Michael

    2015-01-01

    After more than a decade of R&D;, CMOS Monolithic Active Pixel Sensors (MAPS or CPS) have proven to offer concrete answers to the demanding requirements of subatomic physics experi- ments. Their main advantages result from their low material budget, their very high granularity and their integrated signal processing circuitry, which allows coping with high particle rates. Moreover, they offer a valuable radiation tolerance and may be produced at low cost. Sensors of the MIMOSA series have offered an opportunity for nuclear and particle physics exper- iments to address with improved sensitivity physics studies requiring an accurate reconstruction of short living and soft particles. One of their major applications is the STAR-PXL detector, which is the first vertex detector based on MAPS. While this experiment is successfully taking data since two years, it was found that the 0.35 m CMOS technology used for this purpose is not suited for upcoming applications like the CBM micro-vertex detector (MVD) and the ...

  12. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-07-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

  13. Investigation of Toshiba 130nm CMOS process as a possible candidate for active silicon sensors in HEP and X-ray experiments

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Yunan; Hemperek, Tomasz; Kishishita, Testsuichi; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [University of Bonn, Bonn (Germany); Peric, Ivan [Karlsruhe Institute of Technology, Karlsruhe (Germany)

    2015-07-01

    Following the advances of commercial semiconductor manufacturing technologies there has recently been an increased interest within experimental physics community in applying CMOS manufacturing processes to developing active silicon sensors. Possibility of applying high voltage bias combined with high resistivity substrate allows for better depletion of sensor and therefore quicker and more efficient charge collection. One of processes that accommodates those features is Toshiba 130 nm CMOS technology (CMOS3E). Within our group a test chip was designed to examine the suitability of this technology for physics experiment (both for HEP and X-ray imaging). Design consisted of 4 pixel matrices with total of 12 different pixel flavors allowing for evaluation of various pixel geometries and architectures in terms of depletion depth, noise performance, charge collection efficiency, etc. During this talk initial outcome of this evaluation is presented, starting with brief introduction to technology itself, followed by results of TCAD simulations, description of final design and first measurements results.

  14. Signal and noise transfer properties of CMOS based active pixel flat panel imager coupled to structured CsI:Tl.

    Science.gov (United States)

    Arvanitis, C D; Bohndiek, S E; Blakesley, J; Olivo, A; Speller, R D

    2009-01-01

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors can be optically coupled to CsI:Tl phosphors forming a indirect active pixel flat panel imager (APFPI) for high performance medical imaging. The aim of this work is to determine the x-ray imaging capabilities of CMOS-based APFPI and study the signal and noise transfer properties of CsI:Tl phosphors. Three different CsI:Tl phosphors from two different vendors have been used to produce three system configurations. The performance of each system configuration has been studied in terms of the modulation transfer function (MTF), noise power spectra, and detective quantum efficiency (DQE) in the mammographic energy range. A simple method to determine quantum limited systems in this energy range is also presented. In addition, with aid of monochromatic synchrotron radiation, the effect of iodine characteristic x-rays of the CsI:Tl on the MTF has been determined. A Monte Carlo simulation of the signal transfer properties of the imager is also presented in order to study the stages that degrade the spatial resolution of our current system. The effect of using substrate patterning during the growth of CsI:Tl columnar structure was also studied, along with the effect of CsI:Tl fixed pattern noise due to local variations in the scintillation light. CsI:Tl fixed pattern noise appears to limit the performance of our current system configurations. All the system configurations are quantum limited at 0.23 microC/kg with two of them having DQE (0) equal to 0.57. Active pixel flat panel imagers are shown to be digital x-ray imagers with almost constant DQE throughout a significant part of their dynamic range and in particular at very low exposures.

  15. Autoantigen microarrays reveal autoantibodies associated with proliferative nephritis and active disease in pediatric systemic lupus erythematosus.

    Science.gov (United States)

    Haddon, D James; Diep, Vivian K; Price, Jordan V; Limb, Cindy; Utz, Paul J; Balboni, Imelda

    2015-06-17

    Pediatric systemic lupus erythematosus (pSLE) patients often initially present with more active and severe disease than adults, including a higher frequency of lupus nephritis. Specific autoantibodies, including anti-C1q, anti-DNA and anti-alpha-actinin, have been associated with kidney involvement in SLE, and DNA antibodies are capable of initiating early-stage lupus nephritis in severe combined immunodeficiency (SCID) mice. Over 100 different autoantibodies have been described in SLE patients, highlighting the need for comprehensive autoantibody profiling. Knowledge of the antibodies associated with pSLE and proliferative nephritis will increase the understanding of SLE pathogenesis, and may aid in monitoring patients for renal flare. We used autoantigen microarrays composed of 140 recombinant or purified antigens to compare the serum autoantibody profiles of new-onset pSLE patients (n = 45) to healthy controls (n = 17). We also compared pSLE patients with biopsy-confirmed class III or IV proliferative nephritis (n = 23) and without significant renal involvement (n = 18). We performed ELISA with selected autoantigens to validate the microarray findings. We created a multiple logistic regression model, based on the ELISA and clinical information, to predict whether a patient had proliferative nephritis, and used a validation cohort (n = 23) and longitudinal samples (88 patient visits) to test its accuracy. Fifty autoantibodies were at significantly higher levels in the sera of pSLE patients compared to healthy controls, including anti-B cell-activating factor (BAFF). High levels of anti-BAFF were associated with active disease. Thirteen serum autoantibodies were present at significantly higher levels in pSLE patients with proliferative nephritis than those without, and we confirmed five autoantigens (dsDNA, C1q, collagens IV and X and aggrecan) by ELISA. Our model, based on ELISA measurements and clinical variables, correctly identified patients with proliferative

  16. CMOS circuits manual

    CERN Document Server

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  17. Modeling of an integrated active feedback preamplifier in a 025 mu m CMOS technology at cryogenic temperatures

    CERN Document Server

    Saramad, Shahyar; Bucher, M; Despeisse, Matthieu; Jarron, Pierre; Pelloux, Nicolas; Rivetti, A

    2003-01-01

    This paper describes the modeling of a standard 0.25 mu m CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). The extracted parameters were then used to optimize the performance of a room temperature designed active feedback front-end preamplifier (AFP) at 130 K. The results show that with a small adjustment of the extracted parameters it is possible to have a reasonable model at low temperatures. By optimizing the bias conditions at 130 K, a fall time down to 1.5 ns and a double pulse resolution of 6.5 ns were measured for NA60 proton beamscope. The proposed approach will also allow a low temperature design optimization for future projects, which will not be possible using only standard models provided by the foundry. (16 refs).

  18. A data parallel digitizer for a time-based simulation of CMOS Monolithic Active Pixel Sensors with FairRoot

    Science.gov (United States)

    Sitzmann, P.; Amar-Youcef, S.; Doering, D.; Deveaux, M.; Fröhlich, I.; Koziel, M.; Krebs, E.; Linnik, B.; Michel, J.; Milanovic, B.; Müntz, C.; Li, Q.; Stroth, J.; Tischler, T.

    2014-06-01

    CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. They feature an excellent single point resolution of few μm, a light material budget of 0.05% Xo in combination with a good radiation tolerance and time resolution. This makes the sensors a valuable technology for micro vertex detectors (MVD) of various experiments in heavy ion and particle physics like STAR and CBM. State of the art MAPS are equipped with a rolling shutter readout. Therefore, the data of one individual event is typically found in more than one data train generated by the sensor. This paper presents a concept to introduce this feature in both simulation and data analysis, taking profit of the sensor topology of the MVD. This topology allows to use for massive parallel data streaming and handling strategies within the FairRoot framework.

  19. Development and validation of a method for profiling post-translational modification activities using protein microarrays.

    Directory of Open Access Journals (Sweden)

    Sonia V Del Rincón

    Full Text Available BACKGROUND: Post-translational modifications (PTMs impact on the stability, cellular location, and function of a protein thereby achieving a greater functional diversity of the proteome. To fully appreciate how PTMs modulate signaling networks, proteome-wide studies are necessary. However, the evaluation of PTMs on a proteome-wide scale has proven to be technically difficult. To facilitate these analyses we have developed a protein microarray-based assay that is capable of profiling PTM activities in complex biological mixtures such as whole-cell extracts and pathological specimens. METHODOLOGY/PRINCIPAL FINDINGS: In our assay, protein microarrays serve as a substrate platform for in vitro enzymatic reactions in which a recombinant ligase, or extracts prepared from whole cells or a pathological specimen is overlaid. The reactions include labeled modifiers (e.g., ubiquitin, SUMO1, or NEDD8, ATP regenerating system, and other required components (depending on the assay that support the conjugation of the modifier. In this report, we apply this methodology to profile three molecularly complex PTMs (ubiquitylation, SUMOylation, and NEDDylation using purified ligase enzymes and extracts prepared from cultured cell lines and pathological specimens. We further validate this approach by confirming the in vivo modification of several novel PTM substrates identified by our assay. CONCLUSIONS/SIGNIFICANCE: This methodology offers several advantages over currently used PTM detection methods including ease of use, rapidity, scale, and sample source diversity. Furthermore, by allowing for the intrinsic enzymatic activities of cell populations or pathological states to be directly compared, this methodology could have widespread applications for the study of PTMs in human diseases and has the potential to be directly applied to most, if not all, basic PTM research.

  20. Carbohydrate microarrays

    DEFF Research Database (Denmark)

    Park, Sungjin; Gildersleeve, Jeffrey C; Blixt, Klas Ola;

    2012-01-01

    In the last decade, carbohydrate microarrays have been core technologies for analyzing carbohydrate-mediated recognition events in a high-throughput fashion. A number of methods have been exploited for immobilizing glycans on the solid surface in a microarray format. This microarray-based technol...

  1. A new versatile microarray-based method for high throughput screening of carbohydrate-active enzymes.

    Science.gov (United States)

    Vidal-Melgosa, Silvia; Pedersen, Henriette L; Schückel, Julia; Arnal, Grégory; Dumon, Claire; Amby, Daniel B; Monrad, Rune Nygaard; Westereng, Bjørge; Willats, William G T

    2015-04-03

    Carbohydrate-active enzymes have multiple biological roles and industrial applications. Advances in genome and transcriptome sequencing together with associated bioinformatics tools have identified vast numbers of putative carbohydrate-degrading and -modifying enzymes including glycoside hydrolases and lytic polysaccharide monooxygenases. However, there is a paucity of methods for rapidly screening the activities of these enzymes. By combining the multiplexing capacity of carbohydrate microarrays with the specificity of molecular probes, we have developed a sensitive, high throughput, and versatile semiquantitative enzyme screening technique that requires low amounts of enzyme and substrate. The method can be used to assess the activities of single enzymes, enzyme mixtures, and crude culture broths against single substrates, substrate mixtures, and biomass samples. Moreover, we show that the technique can be used to analyze both endo-acting and exo-acting glycoside hydrolases, polysaccharide lyases, carbohydrate esterases, and lytic polysaccharide monooxygenases. We demonstrate the potential of the technique by identifying the substrate specificities of purified uncharacterized enzymes and by screening enzyme activities from fungal culture broths.

  2. Microfluidic DNA microarrays in PMMA chips: streamlined fabrication via simultaneous DNA immobilization and bonding activation by brief UV exposure

    DEFF Research Database (Denmark)

    Sabourin, David; Petersen, J; Snakenborg, Detlef

    2010-01-01

    This report presents and describes a simple and scalable method for producing functional DNA microarrays within enclosed polymeric, PMMA, microfluidic devices. Brief (30 s) exposure to UV simultaneously immobilized poly(T)poly(C)-tagged DNA probes to the surface of unmodified PMMA and activated t...

  3. Microfluidic DNA microarrays in PMMA chips: streamlined fabrication via simultaneous DNA immobilization and bonding activation by brief UV exposure

    DEFF Research Database (Denmark)

    Sabourin, David; Petersen, J; Snakenborg, Detlef

    2010-01-01

    This report presents and describes a simple and scalable method for producing functional DNA microarrays within enclosed polymeric, PMMA, microfluidic devices. Brief (30 s) exposure to UV simultaneously immobilized poly(T)poly(C)-tagged DNA probes to the surface of unmodified PMMA and activated t...

  4. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

    Science.gov (United States)

    Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

    2015-12-07

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

  5. CMOS Image Sensors for High Speed Applications

    Directory of Open Access Journals (Sweden)

    M. Jamal Deen

    2009-01-01

    Full Text Available Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4~5 μm due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps.

  6. CMOS Image Sensors for High Speed Applications.

    Science.gov (United States)

    El-Desouki, Munir; Deen, M Jamal; Fang, Qiyin; Liu, Louis; Tse, Frances; Armstrong, David

    2009-01-01

    Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps).

  7. Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

    Science.gov (United States)

    Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

    2017-03-07

    High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm(-1)) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

  8. Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    Science.gov (United States)

    Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

    2017-03-01

    High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

  9. Large area CMOS image sensors

    Science.gov (United States)

    Turchetta, R.; Guerrini, N.; Sedgwick, I.

    2011-01-01

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  10. Optimization Design Method for the CMOS-Type Capacitive Micro-Machined Ultrasonic Transducer

    National Research Council Canada - National Science Library

    D Y Chiou; S B Luo; H H Chen

    2011-01-01

    ...) capacitive micro-arrayed ultrasonic transducer (pCMOS-CMUT) is presented. Electromechanical finite element simulations are performed to investigate its operational characteristics, such as the collapse voltage and the resonant frequency...

  11. Microarray Analysis Reveals the Molecular Basis of Antiarthritic Activity of Huo-Luo-Xiao-Ling Dan

    Directory of Open Access Journals (Sweden)

    Hua Yu

    2013-01-01

    Full Text Available Rheumatoid arthritis (RA is a chronic inflammatory disease of autoimmune origin. Huo-luo-xiao-ling dan (HLXL is an herbal mixture that has been used in traditional Chinese medicine over several decades to treat chronic inflammatory diseases including RA. However, the mechanism of the anti-arthritic action of this herbal remedy is poorly understood at the molecular level. In this study, we determined by microarray analysis the effects of HLXL on the global gene expression profile of the draining lymph node cells (LNC in the rat adjuvant arthritis (AA model of human RA. In LNC restimulated in vitro with the disease-related antigen mycobacterial heat-shock protein 65 (Bhsp65, 84 differentially expressed genes (DEG (64 upregulated and 20 downregulated versus 120 DEG (94 upregulated and 26 downregulated were identified in HLXL-treated versus vehicle (Water-treated rats, respectively, and 62 DEG (45 upregulated and 17 downregulated were shared between the two groups. The most affected pathways in response to HLXL treatment included immune response, inflammation, cellular proliferation and apoptosis, and metabolic processes, many of which are directly relevant to arthritis pathogenesis. These results would advance our understanding of the mechanisms underlying the anti-arthritic activity of HLXL.

  12. 45% power saving in a 0.25μm BiCMOS 10Gb/s 50Ω-terminated packaged active-load laser driver

    DEFF Research Database (Denmark)

    Ayranci, E.; Christensen, K.; Andreani, Pietro

    2007-01-01

    A 0.25μm BiCMOS laser driver based on active loads allows operation at 10Gb/s while drawing 5mA from a 1.8V supply. The design guarantees the correct matching of the driver outputs without the use of physical 50Ω load resistors. This enables a theoretical current consumption reduction of 50% (45%...

  13. Carbohydrate microarrays

    DEFF Research Database (Denmark)

    Park, Sungjin; Gildersleeve, Jeffrey C; Blixt, Klas Ola

    2012-01-01

    -based technology has been widely employed for rapid analysis of the glycan binding properties of lectins and antibodies, the quantitative measurements of glycan-protein interactions, detection of cells and pathogens, identification of disease-related anti-glycan antibodies for diagnosis, and fast assessment...... of substrate specificities of glycosyltransferases. This review covers the construction of carbohydrate microarrays, detection methods of carbohydrate microarrays and their applications in biological and biomedical research.......In the last decade, carbohydrate microarrays have been core technologies for analyzing carbohydrate-mediated recognition events in a high-throughput fashion. A number of methods have been exploited for immobilizing glycans on the solid surface in a microarray format. This microarray...

  14. Tissue microarray methodology identifies complement pathway activation and dysregulation in progressive multiple sclerosis.

    Science.gov (United States)

    Loveless, Sam; Neal, James W; Howell, Owain W; Harding, Katharine E; Sarkies, Patrick; Evans, Rhian; Bevan, Ryan J; Hakobyan, Svetlana; Harris, Claire L; Robertson, Neil P; Morgan, Bryan Paul

    2017-07-14

    The complement pathway has potential contributions to both white (WM) and grey matter (GM) pathology in Multiple Sclerosis (MS). A quantitative assessment of complement involvement is lacking. Here we describe the use of Tissue MicroArray (TMA) methodology in conjunction with immunohistochemistry to investigate the localization of complement pathway proteins in progressive MS cortical GM and subcortical WM. Antibodies targeting complement proteins C1q, C3b, regulatory proteins C1 inhibitor (C1INH, complement receptor 1 (CR1), clusterin, factor H (FH) and the C5a anaphylatoxin receptor (C5aR) were utilised alongside standard markers of tissue pathology. All stained slides were digitised for quantitative analysis. We found that numbers of cells immunolabelled for HLA-DR, GFAP, C5aR, C1q and C3b were increased in WM lesions (WML) and GM lesions (GML) compared to normal appearing WM (NAWM) and GM (NAGM), respectively. The complement regulators C1INH, CR1, FH and clusterin were more abundant in WM lesions, while the number of C1q+ neurons were increased and the number of C1INH+, clusterin+, FH+ and CR1+ neurons decreased in GM lesions. The number of complement component positive cells (C1q, C3b) correlated with complement regulator expression in WM, but there was no statistical association between complement activation and regulator expression in the GM. We conclude that TMA methodology and quantitative analysis provides evidence of complement dysregulation in MS GML, including an association of the numerical density of C1q+ cells with tissue lesions. Our work confirms that complement activation and dysregulation occur in all cases of progressive MS and suggest that complement may provide potential biomarkers of the disease. © 2017 International Society of Neuropathology.

  15. Deubiquitylase, deSUMOylase, and deISGylase activity microarrays for assay of substrate preference and functional modifiers.

    Science.gov (United States)

    Loch, Christian M; Cuccherini, Charles L; Leach, Craig A; Strickler, James E

    2011-01-01

    Microarray-based proteomics expanded the information potential of DNA arrays to the level of protein translation and interaction, but so far, not much beyond. Although enzymatic activity from immobilized proteins has been reliably studied using surface plasmon resonance, a microarray of catalytically competent enzymes would facilitate high throughput, parallel study of their function. The ability to localize activity from soluble substrates has frustrated development of such an array. Here, we report the novel use of previously developed, highly specific suicide substrates for three families of enzymes: deubiquitylases, deSUMOylases, and deISGylases. We show specificity of each family to its cognate substrate, and demonstrate utility of the array in a secondary screen of small molecule inhibitors.

  16. A CMOS Switched Transconductor Mixer

    NARCIS (Netherlands)

    Klumperink, Eric A.M.; Louwsma, S.M.; Wienk, Gerhardus J.M.; Nauta, Bram

    A new CMOS active mixer topology can operate at low supply voltages by the use of switches exclusively connected to the supply voltages. Such switches require less voltage headroom and avoid gate-oxide reliability problems. Mixing is achieved by exploiting two transconductors with cross-coupled

  17. Surface-activated microtiter-plate microarray for simultaneous CRP quantification and viral antibody detection.

    Science.gov (United States)

    Viitala, Sari M; Jääskeläinen, Anne J; Kelo, Eira; Sirola, Helena; Moilanen, Kirsi; Suni, Jukka; Vaheri, Antti; Vapalahti, Olli; Närvänen, Ale

    2013-02-01

    Microarrays are widely used in high-throughput DNA and RNA hybridization tests and recently adopted to protein and small molecule interaction studies in basic research and diagnostics. Parallel detection of serum antibodies and antigens has several potential applications in epidemiologic research, vaccine development, and in the diagnosis of allergies, autoimmunity, and infectious diseases. This study demonstrates an immobilization method for immunoassay-based microarray in conventional 96-well polystyrene plates for a serologic diagnostic method combined with quantitative C-reactive protein (CRP) assay. A synthetic peptide (HIV-1), a recombinant protein (Puumala hantavirus nucleocapsid), and purified virus preparations (Sindbis and adenoviruses) were used as antigens for virus-specific antibody detection and monoclonal anti-CRP antibody for antigen detection. The microarray was based on conventional enzyme immunoassays and densitometry from photographed results. Peptide and recombinant antigens functioned well, while whole virus antigens gave discrepant results in 1 out of 23 samples from the reference method, tested with human sera with various antibody responses. The CRP results were in concordance in the concentration range 0.5-150 mg/L with 2 commercially available CRP assays: ReaScan rapid test (R(2) = 0.9975) and Cobas 6000 analyzer (R(2) =0.9595). The results indicate that microtiter plates provide a promising platform for further development of microarrays for parallel antibody and antigen detection.

  18. Reliability engineering in RF CMOS

    OpenAIRE

    2008-01-01

    In this thesis new developments are presented for reliability engineering in RF CMOS. Given the increase in use of CMOS technology in applications for mobile communication, also the reliability of CMOS for such applications becomes increasingly important. When applied in these applications, CMOS is typically referred to as RF CMOS, where RF stands for radio frequencies.

  19. A microarray of ubiquitylated proteins for profiling deubiquitylase activity reveals the critical roles of both chain and substrate.

    Science.gov (United States)

    Loch, Christian M; Strickler, James E

    2012-11-01

    Substrate ubiquitylation is a reversible process critical to cellular homeostasis that is often dysregulated in many human pathologies including cancer and neurodegeneration. Elucidating the mechanistic details of this pathway could unlock a large store of information useful to the design of diagnostic and therapeutic interventions. Proteomic approaches to the questions at hand have generally utilized mass spectrometry (MS), which has been successful in identifying both ubiquitylation substrates and profiling pan-cellular chain linkages, but is generally unable to connect the two. Interacting partners of the deubiquitylating enzymes (DUBs) have also been reported by MS, although substrates of catalytically competent DUBs generally cannot be. Where they have been used towards the study of ubiquitylation, protein microarrays have usually functioned as platforms for the identification of substrates for specific E3 ubiquitin ligases. Here, we report on the first use of protein microarrays to identify substrates of DUBs, and in so doing demonstrate the first example of microarray proteomics involving multiple (i.e., distinct, sequential and opposing) enzymatic activities. This technique demonstrates the selectivity of DUBs for both substrate and type (mono- versus poly-) of ubiquitylation. This work shows that the vast majority of DUBs are monoubiquitylated in vitro, and are incapable of removing this modification from themselves. This work also underscores the critical role of utilizing both ubiquitin chains and substrates when attempting to characterize DUBs. This article is part of a Special Issue entitled: Ubiquitin Drug Discovery and Diagnostics.

  20. Scaling CMOS

    Directory of Open Access Journals (Sweden)

    G.A Brown

    2004-01-01

    Full Text Available The scaling of silicon integrated circuits to smaller physical dimensions became a primary activity of advanced device development almost as soon as the basic technology was established. The importance and persistence of this activity is rooted in the confluence of two of the strongest drives governing the business; the push for greater device performance, measured in terms of switching speed, and the desire for greater manufacturing profitability, dependent upon reduced cost per good device built.

  1. Turn-on circuits based on standard CMOS technology for active RFID labels

    Science.gov (United States)

    Hall, David; Ranasinghe, Damith C.; Jamali, Behnam; Cole, Peter H.

    2005-06-01

    The evolution of RFID Systems has lead to the development of a class hierarchy in which the battery powered labels are a set of higher class labels referred to as active labels. The battery powering active transponders must last for an acceptable time, so the electronics of the label must have very low current consumption in order to prolong the life of the battery. However due to circuit complexity or the desired operating range the electronics may drain the battery more rapidly than desired but use of a turn-on circuit allows the battery to be connected only when communication is needed, thus lengthening the life of the battery. Two solutions available for the development of a turn on circuit use resonance in a label rectification circuit to provide a high sensitivity result. This paper presents the results of experiments conducted to evaluate resonance in a label rectification circuit and the designs of fully integrable turn-on circuits. We have also presented test results showing a successful practical implementation of one of the turn on circuit designs.

  2. First tests of CHERWELL, a Monolithic Active Pixel Sensor: A CMOS Image Sensor (CIS) using 180 nm technology

    Energy Technology Data Exchange (ETDEWEB)

    Mylroie-Smith, James, E-mail: j.mylroie-smith@qmul.ac.uk [Queen Mary, University of London (United Kingdom); Kolya, Scott; Velthuis, Jaap [University of Bristol (United Kingdom); Bevan, Adrian; Inguglia, Gianluca [Queen Mary, University of London (United Kingdom); Headspith, Jon; Lazarus, Ian; Lemon, Roy [Daresbury Laboratory, STFC (United Kingdom); Crooks, Jamie; Turchetta, Renato; Wilson, Fergus [Rutherford Appleton Laboratory, STFC (United Kingdom)

    2013-12-11

    The Cherwell is a 4T CMOS sensor in 180 nm technology developed for the detection of charged particles. Here, the different test structures on the sensor will be described and first results from tests on the reference pixel variant are shown. The sensors were shown to have a noise of 12 e{sup −} and a signal to noise up to 150 in {sup 55}Fe.

  3. CAOS-CMOS camera.

    Science.gov (United States)

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems.

  4. A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

    Science.gov (United States)

    Yan Lu; Wing-Hung Ki

    2014-06-01

    A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

  5. Analog filters in nanometer CMOS

    CERN Document Server

    Uhrmann, Heimo; Zimmermann, Horst

    2014-01-01

    Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

  6. A new versatile microarray-based method for high-throughput screening of carbohydrate-active enzymes

    DEFF Research Database (Denmark)

    Vidal Melgosa, Silvia; Pedersen, Henriette Lodberg; Schückel, Julia;

    2015-01-01

    Carbohydrate-active enzymes have multiple biological roles and industrial applications. Advances in genome and transcriptome sequencing, together with associated bioinformatic tools have identified vast numbers of putative carbohydrate degrading and modifying enzymes including glycoside hydrolases...... and lytic polysaccharide monooxygenases. However, there is a paucity of methods for rapidly screening the activities of these enzymes. By combining the multiplexing capacity of carbohydrate microarrays with the specificity of molecular probes, we have developed a sensitive, high-throughput and versatile...... semi-quantitative enzyme-screening technique which requires low amounts of enzyme and substrate. The method can be used to assess the activities of single enzymes, enzyme cocktails and crude culture broths against single substrates, substrate mixtures and biomass samples. Moreover, we show...

  7. On-chip Phase Locked Loop (PLL) design for clock multiplier in CMOS Monolithic Active Pixel Sensors (MAPS)

    CERN Document Server

    Sun, Q; Valin, I; Claus, G; Hu-Guo, Ch; Hu, Yu

    2009-01-01

    In a detector system, clock distribution to sensors must be controlled at a level allowing proper synchronisation. In order to reach theses requirements for the HFT (Heavy Flavor Tracker) upgrade at STAR (Solenoidal Tracker at RHIC), we have proposed to distribute a low frequency clock at 10 MHz which will be multiplied to 160 MHz in each sensor by a PLL. A PLL has been designed for period jitter less than 20 ps rms, low power consumption and manufactured in a 0.35 μm CMOS process.

  8. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    CERN Document Server

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  9. Beyond CMOS nanodevices 1

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

  10. Beyond CMOS nanodevices 2

    CERN Document Server

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

  11. Optical design of microlens array for CMOS image sensors

    Science.gov (United States)

    Zhang, Rongzhu; Lai, Liping

    2016-10-01

    The optical crosstalk between the pixel units can influence the image quality of CMOS image sensor. In the meantime, the duty ratio of CMOS is low because of its pixel structure. These two factors cause the low detection sensitivity of CMOS. In order to reduce the optical crosstalk and improve the fill factor of CMOS image sensor, a microlens array has been designed and integrated with CMOS. The initial parameters of the microlens array have been calculated according to the structure of a CMOS. Then the parameters have been optimized by using ZEMAX and the microlens arrays with different substrate thicknesses have been compared. The results show that in order to obtain the best imaging quality, when the effect of optical crosstalk for CMOS is the minimum, the best distance between microlens array and CMOS is about 19.3 μm. When incident light successively passes through microlens array and the distance, obtaining the minimum facula is around 0.347 um in the active area. In addition, when the incident angle of the light is 0o 22o, the microlens array has obvious inhibitory effect on the optical crosstalk. And the anti-crosstalk distance between microlens array and CMOS is 0 μm 162 μm.

  12. Pathway modeling of microarray data: A case study of pathway activity changes in the testis following in utero exposure to dibutyl phthalate (DBP)

    Energy Technology Data Exchange (ETDEWEB)

    Ovacik, Meric A. [Chemical and Biochemical Engineering Department, Rutgers University, Piscataway, NJ 08854 (United States); Sen, Banalata [National Center for Environmental Assessment, U.S. Environmental Protection Agency, Research Triangle Park, NC 27709 (United States); Euling, Susan Y. [National Center for Environmental Assessment, Office of Research and Development, U.S. Environmental Protection Agency, Washington, DC 20460 (United States); Gaido, Kevin W. [U.S. Food and Drug Administration, Center for Veterinary Medicine, Office of New Animal Drug Evaluation, Division of Human Food Safety, Rockville, MD 20855 (United States); Ierapetritou, Marianthi G. [Chemical and Biochemical Engineering Department, Rutgers University, Piscataway, NJ 08854 (United States); Androulakis, Ioannis P., E-mail: yannis@rci.rutgers.edu [Chemical and Biochemical Engineering Department, Rutgers University, Piscataway, NJ 08854 (United States); Biomedical Engineering Department, Rutgers University, NJ 08854 (United States)

    2013-09-15

    Pathway activity level analysis, the approach pursued in this study, focuses on all genes that are known to be members of metabolic and signaling pathways as defined by the KEGG database. The pathway activity level analysis entails singular value decomposition (SVD) of the expression data of the genes constituting a given pathway. We explore an extension of the pathway activity methodology for application to time-course microarray data. We show that pathway analysis enhances our ability to detect biologically relevant changes in pathway activity using synthetic data. As a case study, we apply the pathway activity level formulation coupled with significance analysis to microarray data from two different rat testes exposed in utero to Dibutyl Phthalate (DBP). In utero DBP exposure in the rat results in developmental toxicity of a number of male reproductive organs, including the testes. One well-characterized mode of action for DBP and the male reproductive developmental effects is the repression of expression of genes involved in cholesterol transport, steroid biosynthesis and testosterone synthesis that lead to a decreased fetal testicular testosterone. Previous analyses of DBP testes microarray data focused on either individual gene expression changes or changes in the expression of specific genes that are hypothesized, or known, to be important in testicular development and testosterone synthesis. However, a pathway analysis may inform whether there are additional affected pathways that could inform additional modes of action linked to DBP developmental toxicity. We show that Pathway activity analysis may be considered for a more comprehensive analysis of microarray data.

  13. Longitudinal microarray analysis of cell surface antigens on peripheral blood mononuclear cells from HIV+ individuals on highly active antiretroviral therapy

    Directory of Open Access Journals (Sweden)

    Wang Bin

    2008-03-01

    Full Text Available Abstract Background The efficacy of highly active antiretroviral therapy (HAART determined by simultaneous monitoring over 100 cell-surface antigens overtime has not been attempted. We used an antibody microarray to analyze changes in the expression of 135 different cell-surface antigens overtime on PBMC from HIV+ patients on HAART. Two groups were chosen, one (n = 6 achieved sustainable response by maintaining below detectable plasma viremia and the other (n = 6 responded intermittently. Blood samples were collected over an average of 3 years and 5–8 time points were selected for microarray assay and statistical analysis. Results Significant trends over time were observed for the expression of 7 cell surface antigens (CD2, CD3epsilon, CD5, CD95, CD36, CD27 and CD28 for combined patient groups. Between groups, expression levels of 10 cell surface antigens (CD11a, CD29, CD38, CD45RO, CD52, CD56, CD57, CD62E, CD64 and CD33 were found to be differential. Expression levels of CD9, CD11a, CD27, CD28 and CD52, CD44, CD49d, CD49e, CD11c strongly correlated with CD4+ and CD8+ T cell counts, respectively. Conclusion Our findings not only detected markers that may have potential prognostic/diagnostic values in evaluating HAART efficacy, but also showed how density of cell surface antigens could be efficiently exploited in an array-like manner in relation to HAART and HIV-infection. The antigens identified in this study should be further investigated by other methods such as flow cytometry for confirmation as biological analysis of these antigens may help further clarify their role during HAART and HIV infection.

  14. Application of a novel functional gene microarray to probe the functional ecology of ammonia oxidation in nitrifying activated sludge.

    Directory of Open Access Journals (Sweden)

    Michael D Short

    Full Text Available We report on the first study trialling a newly-developed, functional gene microarray (FGA for characterising bacterial and archaeal ammonia oxidisers in activated sludge. Mixed liquor (ML and media biofilm samples from a full-scale integrated fixed-film activated sludge (IFAS plant were analysed with the FGA to profile the diversity and relative abundance of ammonia-oxidising archaea and bacteria (AOA and AOB respectively. FGA analyses of AOA and AOB communities revealed ubiquitous distribution of AOA across all samples - an important finding for these newly-discovered and poorly characterised organisms. Results also revealed striking differences in the functional ecology of attached versus suspended communities within the IFAS reactor. Quantitative assessment of AOB and AOA functional gene abundance revealed a dominance of AOB in the ML and approximately equal distribution of AOA and AOB in the media-attached biofilm. Subsequent correlations of functional gene abundance data with key water quality parameters suggested an important functional role for media-attached AOB in particular for IFAS reactor nitrification performance and indicate possible functional redundancy in some IFAS ammonia oxidiser communities. Results from this investigation demonstrate the capacity of the FGA to resolve subtle ecological shifts in key microbial communities in nitrifying activated sludge and indicate its value as a tool for better understanding the linkages between the ecology and performance of these engineered systems.

  15. Extensive innate immune gene activation accompanies brain aging, increasing vulnerability to cognitive decline and neurodegeneration: a microarray study

    Directory of Open Access Journals (Sweden)

    Cribbs David H

    2012-07-01

    Full Text Available Abstract Background This study undertakes a systematic and comprehensive analysis of brain gene expression profiles of immune/inflammation-related genes in aging and Alzheimer’s disease (AD. Methods In a well-powered microarray study of young (20 to 59 years, aged (60 to 99 years, and AD (74 to 95 years cases, gene responses were assessed in the hippocampus, entorhinal cortex, superior frontal gyrus, and post-central gyrus. Results Several novel concepts emerge. First, immune/inflammation-related genes showed major changes in gene expression over the course of cognitively normal aging, with the extent of gene response far greater in aging than in AD. Of the 759 immune-related probesets interrogated on the microarray, approximately 40% were significantly altered in the SFG, PCG and HC with increasing age, with the majority upregulated (64 to 86%. In contrast, far fewer immune/inflammation genes were significantly changed in the transition to AD (approximately 6% of immune-related probesets, with gene responses primarily restricted to the SFG and HC. Second, relatively few significant changes in immune/inflammation genes were detected in the EC either in aging or AD, although many genes in the EC showed similar trends in responses as in the other brain regions. Third, immune/inflammation genes undergo gender-specific patterns of response in aging and AD, with the most pronounced differences emerging in aging. Finally, there was widespread upregulation of genes reflecting activation of microglia and perivascular macrophages in the aging brain, coupled with a downregulation of select factors (TOLLIP, fractalkine that when present curtail microglial/macrophage activation. Notably, essentially all pathways of the innate immune system were upregulated in aging, including numerous complement components, genes involved in toll-like receptor signaling and inflammasome signaling, as well as genes coding for immunoglobulin (Fc receptors and human

  16. Wideband CMOS receivers

    CERN Document Server

    Oliveira, Luis

    2015-01-01

    This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

  17. MicroCMOS design

    CERN Document Server

    Song, Bang-Sup

    2011-01-01

    MicroCMOS Design covers key analog design methodologies with an emphasis on analog systems that can be integrated into systems-on-chip (SoCs). Starting at the transistor level, this book introduces basic concepts in the design of system-level complementary metal-oxide semiconductors (CMOS). It uses practical examples to illustrate circuit construction so that readers can develop an intuitive understanding rather than just assimilate the usual conventional analytical knowledge. As SoCs become increasingly complex, analog/radio frequency (RF) system designers have to master both system- and tran

  18. Carbohydrate Microarrays in Plant Science

    DEFF Research Database (Denmark)

    Fangel, Jonatan Ulrik; Pedersen, H.L.; Vidal-Melgosa, S.

    2012-01-01

    industrially and nutritionally. Understanding the biological roles of plant glycans and the effective exploitation of their useful properties requires a detailed understanding of their structures, occurrence, and molecular interactions. Microarray technology has revolutionized the massively high......-throughput analysis of nucleotides, proteins, and increasingly carbohydrates. Using microarrays, the abundance of and interactions between hundreds and thousands of molecules can be assessed simultaneously using very small amounts of analytes. Here we show that carbohydrate microarrays are multifunctional tools...... for plant research and can be used to map glycan populations across large numbers of samples to screen antibodies, carbohydrate binding proteins, and carbohydrate binding modules and to investigate enzyme activities....

  19. Integrated 60GHz RF beamforming in CMOS

    CERN Document Server

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  20. Scaling and Pixel Crosstalk Considerations for CMOS Image Sensor

    Institute of Scientific and Technical Information of China (English)

    JIN Xiang-liang; CHEN Jie(member,IEEE); QIU Yu-lin

    2003-01-01

    With the scaling development of the minimum lithographic size,the scaling trend of CMOS imager pixel size and fill factor has been computed according to the Moore rule.When the CMOS minimum lithographic feature scales down to 0.35 μm,the CCD image pixel size is not so easy to be reduced and but the CMOS image pixel size benefits from the scaling minimum lithographic feature. However, when the CMOS technology is downscaled to or under 0.35 μm,the fabrication of CMOS image sensors will be limited by the standard CMOS process in both ways of shallow trench isolation and source/drain junction,which results in pixel crosstalk.The impact of the crosstalk on the active pixel CMOS image sensor is analyzed based on the technology scaling.Some suppressed crosstalk methods have been reviewed.The best way is that combining the advantages of CMOS and SOI technology to fabricate the image sensors will reduce the pixel crosstalk.

  1. Decreased Expression of Inhibitor of Caspase-Activated DNase (ICAD) in Renal Cell Carcinoma - Tissue Microarray of Human Samples.

    Science.gov (United States)

    Rajandram, Retnagowri; Razack, Azad H A; Ng, Keng Lim; Gobe, Glenda C

    2016-01-01

    Although primary localised tumours of renal cell carcinoma (RCC) can be treated relatively successfully with surgery, metastatic RCC has poor prognosis because of late diagnosis and resistance to therapies. In the present study, we were interested in profiling the protein expression of "inhibitor of caspase-activated DNase" (ICAD), an apoptosis inhibitor, in kidney cancer and its paired normal kidney. Immunohistochemistry with automated batch staining and morphometry using digital pathology were used to compare ICAD in 121 RCC specimens with their paired normal kidney tissue. Tissue microarray of formalin-fixed, paraffin-embedded archival tissue was used. Intensity and localisation of ICAD were compared between normal and cancer samples, and against grading within the cancers. The results demonstrated that, in this cohort, ICAD was highly expressed in the proximal tubular epithelium of normal kidney, and significantly decreased in clear cell RCC tissue (p < 0.05) as well as other subtypes of RCC (p < 0.01) compared with normal kidney. There was a tendency towards nuclear localisation of ICAD in clear cell RCC, but not in other subtypes of RCC. No significant association was found between ICAD intensity and grade of RCC. In summary, down-regulation of ICAD occurs in RCC. ICAD normally inhibits DNA fragmentation and apoptosis; thus, its down-regulation was unexpected in a cancer known for its resistance to apoptosis. However, these RCC samples were from primary, not metastatic, RCC sites, and down-regulated ICAD may be part of a progressive pathway that promotes RCC metastasis.

  2. Expression profiling of peroxisome proliferator-activated receptor-delta (PPAR-delta) in mouse tissues using tissue microarray.

    Science.gov (United States)

    Higashiyama, Hiroyuki; Billin, Andrew N; Okamoto, Yuji; Kinoshita, Mine; Asano, Satoshi

    2007-05-01

    Peroxisome proliferator-activated receptor-delta (PPAR-delta) is known as a transcription factor involved in the regulation of fatty acid oxidation and mitochondrial biogenesis in several tissues, such as skeletal muscle, liver and adipose tissues. In this study, to elucidate systemic physiological functions of PPAR-delta, we examined the tissue distribution and localization of PPAR-delta in adult mouse tissues using tissue microarray (TMA)-based immunohistochemistry. PPAR-delta positive signals were observed on variety of tissues/cells in multiple systems including cardiovascular, urinary, respiratory, digestive, endocrine, nervous, hematopoietic, immune, musculoskeletal, sensory and reproductive organ systems. In these organs, PPAR-delta immunoreactivity was generally localized on the nucleus, although cytoplasmic localization was observed on several cell types including neurons in the nervous system and cells of the islet of Langerhans. These expression profiling data implicate various physiological roles of PPAR-delta in multiple organ systems. TMA-based immunohistochemistry enables to profile comprehensive protein localization and distribution in a high-throughput manner.

  3. Active Fail-Safe Micro-Array Flow Control for Advanced Embedded Propulsion Systems

    Science.gov (United States)

    Anderson, Bernhard H.; Mace, James L.; Mani, Mori

    2009-01-01

    The primary objective of this research effort was to develop and analytically demonstrate enhanced first generation active "fail-safe" hybrid flow-control techniques to simultaneously manage the boundary layer on the vehicle fore-body and to control the secondary flow generated within modern serpentine or embedded inlet S-duct configurations. The enhanced first-generation technique focused on both micro-vanes and micro-ramps highly-integrated with micro -jets to provide nonlinear augmentation for the "strength' or effectiveness of highly-integrated flow control systems. The study focused on the micro -jet mass flow ratio (Wjet/Waip) range from 0.10 to 0.30 percent and jet total pressure ratios (Pjet/Po) from 1.0 to 3.0. The engine bleed airflow range under study represents about a 10 fold decrease in micro -jet airflow than previously required. Therefore, by pre-conditioning, or injecting a very small amount of high-pressure jet flow into the vortex generated by the micro-vane and/or micro-ramp, active flow control is achieved and substantial augmentation of the controlling flow is realized.

  4. Bacillus subtilis RNase Y activity in vivo analysed by tiling microarrays.

    Directory of Open Access Journals (Sweden)

    Soumaya Laalami

    Full Text Available RNase Y is a key endoribonuclease affecting global mRNA stability in Bacillus subtilis. Its characterization provided the first evidence that endonucleolytic cleavage plays a major role in the mRNA metabolism of this organism. RNase Y shares important functional features with the RNA decay initiating RNase E from Escherichia coli, notably a similar cleavage specificity and a preference for 5' monophosphorylated substrates. We used high-resolution tiling arrays to analyze the effect of RNase Y depletion on RNA abundance covering the entire genome. The data confirm that this endoribonuclease plays a key role in initiating the decay of a large number of mRNAs as well as non coding RNAs. The downstream cleavage products are likely to be degraded by the 5' exonucleolytic activity of RNases J1/J2 as we show for a specific case. Comparison of the data with that of two other recent studies revealed very significant differences. About two thirds of the mRNAs upregulated following RNase Y depletion were different when compared to either one of these studies and only about 10% were in common in all three studies. This highlights that experimental conditions and data analysis play an important role in identifying RNase Y substrates by global transcriptional profiling. Our data confirmed already known RNase Y substrates and due to the precision and reproducibility of the profiles allow an exceptionally detailed view of the turnover of hundreds of new RNA substrates.

  5. All-CMOS night vision viewer with integrated microdisplay

    Science.gov (United States)

    Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

    2014-02-01

    The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

  6. Building strong partnerships with CMOs.

    Science.gov (United States)

    Dye, Carson F

    2014-07-01

    CFOs and chief medical officers (CMOs) can build on common traits to form productive partnerships in guiding healthcare organizations through the changes affecting the industry. CFOs can strengthen bonds with CMOs by taking steps to engage physicians on their own turf--by visiting clinical locations and attending medical-executive committee meetings, for example. Steps CFOs can take to help CMOs become more acquainted with the financial operations of health systems include demonstrating the impact of clinical decisions on costs and inviting CMOs to attend finance-related meetings.

  7. CMOS monolithic pixel sensors research and development at LBNL

    Indian Academy of Sciences (India)

    D Contarato; J-M Bussat; P Denes; L Griender; T Kim; T Stezeberger; H Weiman; M Battaglia; B Hooberman; L Tompkins

    2007-12-01

    This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS pixel sensors are also reported, and future plans and activities are discussed.

  8. Microarrays, Integrated Analytical Systems

    Science.gov (United States)

    Combinatorial chemistry is used to find materials that form sensor microarrays. This book discusses the fundamentals, and then proceeds to the many applications of microarrays, from measuring gene expression (DNA microarrays) to protein-protein interactions, peptide chemistry, carbodhydrate chemistry, electrochemical detection, and microfluidics.

  9. Structured Analog CMOS Design

    CERN Document Server

    Stefanovic, Danica

    2008-01-01

    Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences. The proposed transistor-level design procedure is based on the EKV modeling approach and relies on the device inversion level as a fundament

  10. Design, Analysis, and Optimization of a CMOS Active Pixel Sensor%CMOS有源像素传感器特性分析与优化设计

    Institute of Scientific and Technical Information of China (English)

    徐江涛; 姚素英; 李斌桥; 史再峰; 高静

    2006-01-01

    A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57% ,the photo-sensitivity is 0.8V/(lux · s) ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.%设计了一个三管有源像素和其用开关电容放大器实现的双采样读出电路.该电路被嵌入一64×64像素阵列CMOS图像传感器,在Chartered公司0.35μm工艺线上成功流片.在8μm×8μm像素尺寸下实现了57%的填充因子.测得可见光响应灵敏度为0.8V/(lux·s),动态范围为50dB.理论分析和实验结果表明随着工艺尺寸缩小,像素尺寸减小会使光响应灵敏度降低.在深亚微米工艺条件下,较深的n阱/p衬底结光电二极管可以提供合理的填充因子和光响应灵敏度.

  11. CMOS front ends for millimeter wave wireless communication systems

    CERN Document Server

    Deferm, Noël

    2015-01-01

    This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

  12. Carbohydrate microarrays in plant science.

    Science.gov (United States)

    Fangel, Jonatan U; Pedersen, Henriette L; Vidal-Melgosa, Silvia; Ahl, Louise I; Salmean, Armando Asuncion; Egelund, Jack; Rydahl, Maja Gro; Clausen, Mads H; Willats, William G T

    2012-01-01

    Almost all plant cells are surrounded by glycan-rich cell walls, which form much of the plant body and collectively are the largest source of biomass on earth. Plants use polysaccharides for support, defense, signaling, cell adhesion, and as energy storage, and many plant glycans are also important industrially and nutritionally. Understanding the biological roles of plant glycans and the effective exploitation of their useful properties requires a detailed understanding of their structures, occurrence, and molecular interactions. Microarray technology has revolutionized the massively high-throughput analysis of nucleotides, proteins, and increasingly carbohydrates. Using microarrays, the abundance of and interactions between hundreds and thousands of molecules can be assessed simultaneously using very small amounts of analytes. Here we show that carbohydrate microarrays are multifunctional tools for plant research and can be used to map glycan populations across large numbers of samples to screen antibodies, carbohydrate binding proteins, and carbohydrate binding modules and to investigate enzyme activities.

  13. A CMOS Morlet Wavelet Generator

    Directory of Open Access Journals (Sweden)

    A. I. Bautista-Castillo

    2017-04-01

    Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

  14. DESIGN AND IMPLEMETTATION OF CMOS IMAGE SENSOR

    Institute of Scientific and Technical Information of China (English)

    Liu Yu; Wang Guoyu

    2007-01-01

    A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35 μm process along with its design and implementation is introduced in this paper. The pixel architecture of Active Pixel Sensor (APS) is used in the chip, which comprises a 256×256 pixel array together with column amplifiers, scan array circuits, series interface, control logic and Analog-Digital Converter (ADC). With the use of smart layout design, fill factor of pixel cell is 43%. Moreover, a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used.The CMOS image sensor chip is implemented based on the 0.35 μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.

  15. Introduction to microarray technology.

    Science.gov (United States)

    Dufva, Martin

    2009-01-01

    DNA microarrays can be used for large number of application where high-throughput is needed. The ability to probe a sample for hundred to million different molecules at once has made DNA microarray one of the fastest growing techniques since its introduction about 15 years ago. Microarray technology can be used for large scale genotyping, gene expression profiling, comparative genomic hybridization and resequencing among other applications. Microarray technology is a complex mixture of numerous technology and research fields such as mechanics, microfabrication, chemistry, DNA behaviour, microfluidics, enzymology, optics and bioinformatics. This chapter will give an introduction to each five basic steps in microarray technology that includes fabrication, target preparation, hybridization, detection and data analysis. Basic concepts and nomenclature used in the field of microarray technology and their relationships will also be explained.

  16. CMOS-Based Biosensor Arrays

    CERN Document Server

    Thewes, R; Schienle, M; Hofmann, F; Frey, A; Brederlow, R; Augustyniak, M; Jenkner, M; Eversmann, B; Schindler-Bauer, P; Atzesberger, M; Holzapfl, B; Beer, G; Haneder, T; Hanke, H -C

    2011-01-01

    CMOS-based sensor array chips provide new and attractive features as compared to today's standard tools for medical, diagnostic, and biotechnical applications. Examples for molecule- and cell-based approaches and related circuit design issues are discussed.

  17. Comparators in nanometer CMOS technology

    CERN Document Server

    Goll, Bernhard

    2015-01-01

    This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties. Starting from the basics of comparators and the transistor characteristics in nanometer CMOS, seven high-performance comparators developed by the authors in 120nm and 65nm CMOS are described extensively. Methods and measurement circuits for the characterization of advanced comparators are introduced. A synthesis of the largely differing aspects of demands on modern comparators and the properties of devices being available in nanometer CMOS, which are posed by the so-called nanometer hell of physics, is accomplished. The book summarizes the state of the art in integrated comparators. Advanced measurement circuits for characterization will be introduced as well as the method of characterization by bit-error analysis usually being used for characterization of optical receivers. ...

  18. DNA Microarray Technique

    Directory of Open Access Journals (Sweden)

    Thakare SP

    2012-11-01

    Full Text Available DNA Microarray is the emerging technique in Biotechnology. The many varieties of DNA microarray or DNA chip devices and systems are described along with their methods for fabrication and their use. It also includes screening and diagnostic applications. The DNA microarray hybridization applications include the important areas of gene expression analysis and genotyping for point mutations, single nucleotide polymorphisms (SNPs, and short tandem repeats (STRs. In addition to the many molecular biological and genomic research uses, this review covers applications of microarray devices and systems for pharmacogenomic research and drug discovery, infectious and genetic disease and cancer diagnostics, and forensic and genetic identification purposes.

  19. CMOS array design automation techniques

    Science.gov (United States)

    Lombardi, T.; Feller, A.

    1976-01-01

    The design considerations and the circuit development for a 4096-bit CMOS SOS ROM chip, the ATL078 are described. Organization of the ATL078 is 512 words by 8 bits. The ROM was designed to be programmable either at the metal mask level or by a directed laser beam after processing. The development of a 4K CMOS SOS ROM fills a void left by available ROM chip types, and makes the design of a totally major high speed system more realizable.

  20. CMOS Nonlinear Signal Processing Circuits

    OpenAIRE

    2010-01-01

    The chapter describes various nonlinear signal processing CMOS circuits, including a high reliable WTA/LTA, simple MED cell, and low-voltage arbitrary order extractor. We focus the discussion on CMOS analog circuit design with reliable, programmable capability, and low voltage operation. It is a practical problem when the multiple identical cells are required to match and realized within a single chip using a conventional process. Thus, the design of high-reliable circuit is indeed needed. Th...

  1. Low Power CMOS Analog Multiplier

    Directory of Open Access Journals (Sweden)

    Shipra Sachan

    2015-12-01

    Full Text Available In this paper Low power low voltage CMOS analog multiplier circuit is proposed. It is based on flipped voltage follower. It consists of four voltage adders and a multiplier core. The circuit is analyzed and designed in 0.18um CMOS process model and simulation results have shown that, under single 0.9V supply voltage, and it consumes only 31.8µW quiescent power and 110MHZ bandwidth.

  2. Optimization Design Method for the CMOS-type Capacitive Micro-Machined Ultrasonic Transducer

    Directory of Open Access Journals (Sweden)

    D. Y. Chiou

    2011-12-01

    Full Text Available In this study, an integrated modeling technique for characterization and optimization design of the complementary metal-oxide-semiconductor (CMOS capacitive micro-arrayed ultrasonic transducer (pCMOS-CMUT is presented. Electromechanical finite element simulations are performed to investigate its operational characteristics, such as the collapse voltage and the resonant frequency. Both the numerical and experimental results are in good agreement. In order to simultaneously customize the resonant frequency and minimize the collapse voltage, the genetic algorithm (GA is applied to optimize dimensional parameters of the transducer. From the present results, it is concluded that the FE/GA coupling approach provides another efficient numerical tool for multi-objective design of the pCMOS-CMUT.

  3. Design and fabrication of vertically-integrated CMOS image sensors.

    Science.gov (United States)

    Skorka, Orit; Joseph, Dileepan

    2011-01-01

    Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

  4. CMOS bulk-metal design handbook

    Science.gov (United States)

    Edge, T. M.

    1978-01-01

    User's guide describes techniques for generating precision mask artwork for complex CMOS integrated circuits, starting from logic diagram. Techniques are based on standard-cell approach. Guide also includes user guidelines for designing efficient CMOS arrays.

  5. Microarray Analysis in Glioblastomas

    Science.gov (United States)

    Bhawe, Kaumudi M.; Aghi, Manish K.

    2016-01-01

    Microarray analysis in glioblastomas is done using either cell lines or patient samples as starting material. A survey of the current literature points to transcript-based microarrays and immunohistochemistry (IHC)-based tissue microarrays as being the preferred methods of choice in cancers of neurological origin. Microarray analysis may be carried out for various purposes including the following: To correlate gene expression signatures of glioblastoma cell lines or tumors with response to chemotherapy (DeLay et al., Clin Cancer Res 18(10):2930–2942, 2012)To correlate gene expression patterns with biological features like proliferation or invasiveness of the glioblastoma cells (Jiang et al., PLoS One 8(6):e66008, 2013)To discover new tumor classificatory systems based on gene expression signature, and to correlate therapeutic response and prognosis with these signatures (Huse et al., Annu Rev Med 64(1):59–70, 2013; Verhaak et al., Cancer Cell 17(1):98–110, 2010) While investigators can sometimes use archived tumor gene expression data available from repositories such as the NCBI Gene Expression Omnibus to answer their questions, new arrays must often be run to adequately answer specific questions. Here, we provide a detailed description of microarray methodologies, how to select the appropriate methodology for a given question, and analytical strategies that can be used. Experimental methodology for protein microarrays is outside the scope of this chapter, but basic sample preparation techniques for transcript-based microarrays are included here. PMID:26113463

  6. Microarray analysis of Etrog citron (Citrus medica L.) reveals changes in chloroplast, cell wall, peroxidase and symporter activities in response to viroid infection.

    Science.gov (United States)

    Rizza, Serena; Conesa, Ana; Juarez, José; Catara, Antonino; Navarro, Luis; Duran-Vila, Nuria; Ancillo, Gema

    2012-10-01

    Viroids are small (246-401 nucleotides), single-stranded, circular RNA molecules that infect several crop plants and can cause diseases of economic importance. Citrus are the hosts in which the largest number of viroids have been identified. Citrus exocortis viroid (CEVd), the causal agent of citrus exocortis disease, induces considerable losses in citrus crops. Changes in the gene expression profile during the early (pre-symptomatic) and late (post-symptomatic) stages of Etrog citron infected with CEVd were investigated using a citrus cDNA microarray. MaSigPro analysis was performed and, on the basis of gene expression profiles as a function of the time after infection, the differentially expressed genes were classified into five clusters. FatiScan analysis revealed significant enrichment of functional categories for each cluster, indicating that viroid infection triggers important changes in chloroplast, cell wall, peroxidase and symporter activities.

  7. A CMOS floating point multiplier

    Science.gov (United States)

    Uya, M.; Kaneko, K.; Yasui, J.

    1984-10-01

    This paper describes a 32-bit CMOS floating point multiplier. The chip can perform 32-bit floating point multiplication (based on the proposed IEEE Standard format) and 24-bit fixed point multiplication (two's complement format) in less than 78.7 and 71.1 ns, respectively, and the typical power dissipation is 195 mW at 10 million operations per second. High-speed multiplication techniques - a modified Booth's allgorithm, a carry save adder scheme, a high-speed CMOS full adder, and a modified carry select adder - are used to achieve the above high performance. The chip is designed for compatibility with 16-bit microcomputer systems, and is fabricated in 2 micron n-well CMOS technology; it contains about 23000 transistors of 5.75 x 5.67 sq mm in size.

  8. Improved Space Object Observation Techniques Using CMOS Detectors

    Science.gov (United States)

    Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

    2013-08-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

  9. Ultra High-Speed CMOS Circuits Beyond 100 GHz

    CERN Document Server

    Gharavi, Sam

    2012-01-01

    The book covers the CMOS-based millimeter wave circuits and devices and presents methods and design techniques to use CMOS technology for circuits operating beyond 100 GHz.� Coverage includes a detailed description of both active and passive devices, including modeling techniques and performance optimization. Various mm-wave circuit blocks are discussed, emphasizing their design distinctions from low-frequency design methodologies. This book also covers a device-oriented circuit design technique that is essential for ultra high speed circuits and gives some examples of device/circuit co-design that can be used for mm-wave technology. Offers a detailed description of high frequency device modeling from a circuit designer perspective; Presents a set of techniques for optimizing the performance of CMOS for mm-wave technology, including noise and low noise design for mm-wave; Introduces circuit/device co-design techniques. �

  10. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Rimoldi, Marco; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

  11. CMOS MEMS Fabrication Technologies and Devices

    Directory of Open Access Journals (Sweden)

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  12. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis descri...

  13. Novel R Pipeline for Analyzing Biolog Phenotypic Microarray Data

    OpenAIRE

    Vehkala, Minna; Shubin, Mikhail; Connor, Thomas Richard; Thomson, Nicholas R.; Corander, Jukka

    2015-01-01

    Data produced by Biolog Phenotype MicroArrays are longitudinal measurements of cells' respiration on distinct substrates. We introduce a three-step pipeline to analyze phenotypic microarray data with novel procedures for grouping, normalization and effect identification. Grouping and normalization are standard problems in the analysis of phenotype microarrays defined as categorizing bacterial responses into active and non-active, and removing systematic errors from the experimental data, resp...

  14. Characterization of 4 K CMOS devices and circuits for hybrid Josephson-CMOS systems

    OpenAIRE

    Yoshikawa, Nobuyuki; Tomida, T.; Tokuda, A.; Liu, Q.; Meng, X.(Institute of High Energy Physics, Beijing, China); Whiteley, SR.; VanDuzer, T.

    2005-01-01

    Characterization and modeling of CMOS devices at 4.2 K are carried out in order to simulate low-temperature operation of CMOS circuits for Josephson-CMOS hybrid systems. CMOS devices examined in this study have been fabricated by using 0.18 mu m, 0.25 mu m, and 0.35 mu m commercial CMOS processes. Their static IN characteristics and capacitances are measured at 4.2 K to establish the low-temperature device model based on the BSIM3 SPICE model. The propagation delays of CMOS inverters measured...

  15. Signalling networks associated with urokinase-type plasminogen activator (uPA) and its inhibitor PAI-1 in breast cancer tissues: new insights from protein microarray analysis.

    Science.gov (United States)

    Wolff, Claudia; Malinowsky, Katharina; Berg, Daniela; Schragner, Kerstin; Schuster, Tibor; Walch, Axel; Bronger, Holger; Höfler, Heinz; Becker, Karl-Friedrich

    2011-01-01

    The urokinase-type plasminogen activator (uPA) and the main uPA inhibitor PAI-1 play important roles in cell migration and invasion in both physiological and pathological contexts. Both factors are clinically applicable predictive markers in node-negative breast cancer patients that are used to stratify patients for adjuvant chemotherapy. In addition to their classical functions in plasmin regulation, both factors are key components in cancer-related cell signalling. Such signalling cascades are well described in cell culture systems, but a better understanding of uPA- and PAI-1-associated signalling networks in clinical tissues is needed. We examined the expression of uPA, PAI-1, and 21 signalling molecules in 201 primary breast cancer tissues using protein microarrays. Expression of uPA was significantly correlated with the expression of ERK and Stat3, while expression of PAI-1 was correlated with the uPA receptor and Akt activation, presumably via integrin and HER-receptor signalling. Analysis of uPA expression did not reveal any significant correlation with staging, grading or age of the patients. The PAI-1 expression was correlated with nodal stage. Network monitoring for uPA and PAI-1 in breast cancer reveals interactions with main signalling cascades and extends the findings from cell culture experiments. Our results reveal possible mechanisms underlying cancer development.

  16. Research and Development of Monolithic Active Pixel Sensors for the Detection of the Elementary Particles; Recherche et developpement de capteurs actifs monolithiques CMOS pour la detection de particules elementaires

    Energy Technology Data Exchange (ETDEWEB)

    Li, Y

    2007-09-15

    In order to develop high spatial resolution and readout speed vertex detectors for the future International Linear Collider (ILC), fast CMOS Monolithic Active Pixel Sensors (MAPS) are studied on this work. Two prototypes of MAPS, MIMOSA 8 and MIMOSA 16, based on the same micro-electronic architecture were developed in CMOS processes with different thickness of epitaxial layer. The size of pixel matrix is 32 x 128: 8 columns of the pixel array are readout directly with analog outputs and the other 24 columns are connected to the column level auto-zero discriminators. The Correlated Double Sampling (CDS) structures are successfully implemented inside pixel and discriminator. The photo diode type pixels with different diode sizes are used in these prototypes. With a {sup 55}Fe X-ray radioactive source, the important parameters, such as Temporal Noise, Fixed Pattern Noise (FPN), Signal-to-Noise Ratio (SNR), Charge-to-Voltage conversion Factor (CVF) and Charge Collection Efficiency (CCE), are studied as function of readout speed and diode size. For MIMOSA 8, the effect of fast neutrons irradiation is also. Two beam tests campaigns were made: at DESY with a 5 GeV electrons beam and at CERN with a 180 GeV pions beam. Detection Efficiency and Spatial Resolution are studied in function of the discriminator threshold. For these two parameters, the influences of diode size and SNR of the central pixel of a cluster are also discussed. In order to improve the spatial resolution of the digital outputs, a very compact (25 {mu}m x 1 mm) and low consumption (300 {mu}W) column level ADC is designed in AMS 0.35 {mu}m OPTO process. Based on successive approximation architecture, the auto-offset cancellation structure is integrated. A new column level auto-zero discriminator using static latch is also designed. (author)

  17. Maize microarray annotation database

    Directory of Open Access Journals (Sweden)

    Berger Dave K

    2011-10-01

    Full Text Available Abstract Background Microarray technology has matured over the past fifteen years into a cost-effective solution with established data analysis protocols for global gene expression profiling. The Agilent-016047 maize 44 K microarray was custom-designed from EST sequences, but only reporter sequences with EST accession numbers are publicly available. The following information is lacking: (a reporter - gene model match, (b number of reporters per gene model, (c potential for cross hybridization, (d sense/antisense orientation of reporters, (e position of reporter on B73 genome sequence (for eQTL studies, and (f functional annotations of genes represented by reporters. To address this, we developed a strategy to annotate the Agilent-016047 maize microarray, and built a publicly accessible annotation database. Description Genomic annotation of the 42,034 reporters on the Agilent-016047 maize microarray was based on BLASTN results of the 60-mer reporter sequences and their corresponding ESTs against the maize B73 RefGen v2 "Working Gene Set" (WGS predicted transcripts and the genome sequence. The agreement between the EST, WGS transcript and gDNA BLASTN results were used to assign the reporters into six genomic annotation groups. These annotation groups were: (i "annotation by sense gene model" (23,668 reporters, (ii "annotation by antisense gene model" (4,330; (iii "annotation by gDNA" without a WGS transcript hit (1,549; (iv "annotation by EST", in which case the EST from which the reporter was designed, but not the reporter itself, has a WGS transcript hit (3,390; (v "ambiguous annotation" (2,608; and (vi "inconclusive annotation" (6,489. Functional annotations of reporters were obtained by BLASTX and Blast2GO analysis of corresponding WGS transcripts against GenBank. The annotations are available in the Maize Microarray Annotation Database http://MaizeArrayAnnot.bi.up.ac.za/, as well as through a GBrowse annotation file that can be uploaded to

  18. Planar pixel sensors in commercial CMOS technologies

    Energy Technology Data Exchange (ETDEWEB)

    Gonella, Laura; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Physikalisches Institut der Universitaet Bonn, Nussallee 12, 53115 Bonn (Germany); Macchiolo, Anna [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany)

    2015-07-01

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  19. Metrology Of Silicide Contacts For Future CMOS

    Science.gov (United States)

    Zollner, Stefan; Gregory, Richard B.; Kottke, M. L.; Vartanian, Victor; Wang, Xiang-Dong; Theodore, David; Fejes, P. L.; Conner, J. R.; Raymond, Mark; Zhu, Xiaoyan; Denning, Dean; Bolton, Scott; Chang, Kyuhwan; Noble, Ross; Jahanbani, Mohamad; Rossow, Marc; Goedeke, Darren; Filipiak, Stan; Garcia, Ricardo; Jawarani, Dharmesh; Taylor, Bill; Nguyen, Bich-Yen; Crabtree, P. E.; Thean, Aaron

    2007-09-01

    Silicide materials (NiSi, CoSi2, TiSi2, etc) are used to form low-resistance contacts between the back-end (W plugs and Cu interconnects) and front-end portions (silicon source, drain, and gate regions) of integrated CMOS circuits. At the 65 nm node, a transition from CoSi2 to NiSi was necessary because of the unique capability of NiSi to form narrow silicide nanowires on active (monocrystalline) and gate (polycrystalline) lines. Like its predecessors TiSi2 and CoSi2, NiSi is a mid-gap silicide, i.e., the Fermi level of the NiSi metal is pinned half-way between the conduction and valence band edges in silicon. This leads to a Schottky barrier between the silicide and silicon source-drain regions, which creates undesirable parasitic resistances. For future CMOS generations, band-edge silicides, such as PtSi for contacts to p-type or rare earth silicides for contacts to n-type Si will be needed. This paper reviews metrology and characterization techniques for NiSi process control for development and manufacturing, with special emphasis on x-ray reflectance and x-ray fluorescence. We also report measurement methods useful for development of a PtSi PMOS module.

  20. Planar CMOS analog SiPMs: design, modeling, and characterization

    Science.gov (United States)

    Zou, Yu; Villa, Federica; Bronzi, Danilo; Tisa, Simone; Tosi, Alberto; Zappa, Franco

    2015-11-01

    Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 106, 13.2 × 106, and 15.0 × 106, respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing.

  1. Study of antimutagenic and antioxidant activities of gallic acid and 1,2,3,4,6-pentagalloylglucose from Pistacia lentiscus. Confirmation by microarray expression profiling.

    Science.gov (United States)

    Abdelwahed, Afef; Bouhlel, Ines; Skandrani, Ines; Valenti, Kita; Kadri, Malika; Guiraud, Pascal; Steiman, Régine; Mariotte, Anne-Marie; Ghedira, Kamel; Laporte, François; Dijoux-Franca, Marie-Geneviève; Chekir-Ghedira, Leila

    2007-01-05

    In vitro antioxidant and antimutagenic activities of two polyphenols isolated from the fruits of Pistacia lentiscus was assessed. Antioxidant activity was determined by the ability of each compound to scavenge the free radical 1,1-diphenyl-2-picrylhydrazyl (DPPH*), to inhibit xanthine oxidase and to inhibit the lipid peroxidation induced by H(2)O(2) in K562 cell line. Antimutagenic activity was assayed with SOS chromotest using Escherichia coli PQ37 as tester strain and Comet assay using K562 cell line. 1,2,3,4,6-Pentagalloylglucose was found to be more effective to scavenge DPPH* radical and protect against lipid peroxidation. Moreover, these two compounds induced an inhibitory activity against nifuroxazide and aflatoxin B1 mutagenicity. The protective effect exhibited by these molecules was also determined by analysis of gene expression as response to an oxidative stress. For this purpose, we used a cDNA-microarray containing 82 genes related to cell defense, essentially represented by antioxidant and DNA repair proteins. We found that 1,2,3,4,6-pentagalloylglucose induced a decrease in the expression of 11 transcripts related to antioxidant enzymes family (GPX1, TXN, AOE372, SHC1 and SEPW1) and DNA repair (POLD1, APEX, POLD2, MPG, PARP and XRCC5). The use of Gallic acid, induced expression of TXN, TXNRD1, AOE372, GSS (antioxidant enzymes) and LIG4, POLD2, MPG, GADD45A, PCNA, RPA2, DDIT3, HMOX2, XPA, TDG, ERCC1 and GTF2H1 (DNA repair) as well as the repression of GPX1, SEPW1, POLD1 and SHC1 gene expression.

  2. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2012-06-15

    The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

  3. Portable design rules for bulk CMOS

    Science.gov (United States)

    Griswold, T. W.

    1982-01-01

    It is pointed out that for the past several years, one school of IC designers has used a simplified set of nMOS geometric design rules (GDR) which is 'portable', in that it can be used by many different nMOS manufacturers. The present investigation is concerned with a preliminary set of design rules for bulk CMOS which has been verified for simple test structures. The GDR are defined in terms of Caltech Intermediate Form (CIF), which is a geometry-description language that defines simple geometrical objects in layers. The layers are abstractions of physical mask layers. The design rules do not presume the existence of any particular design methodology. Attention is given to p-well and n-well CMOS processes, bulk CMOS and CMOS-SOS, CMOS geometric rules, and a description of the advantages of CMOS technology.

  4. Batch Processing of CMOS Compatible Feedthroughs

    DEFF Research Database (Denmark)

    Rasmussen, F.E.; Heschel, M.; Hansen, Ole

    2003-01-01

    This paper presents a technique for batch fabrication of electrical feedthroughs in CMOS wafers. The presented process is designed with specific attention on industrial applicability. The electrical feedthroughs are processed entirely by low temperature, CMOS compatible processes. Hence, the proc......This paper presents a technique for batch fabrication of electrical feedthroughs in CMOS wafers. The presented process is designed with specific attention on industrial applicability. The electrical feedthroughs are processed entirely by low temperature, CMOS compatible processes. Hence....... The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...

  5. CMOS test and evaluation a physical perspective

    CERN Document Server

    Bhushan, Manjul

    2015-01-01

    This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

  6. Apoptotic activity of genistein on human lung adenocarcinoma SPC-A-1 cells and preliminary exploration of its mechanisms using microarray.

    Science.gov (United States)

    Zou, Huafei; Zhan, Shuxuan; Cao, Kaiming

    2008-11-01

    Soy isoflavone genistein is active against certain solid malignancies, but its direct effect on lung adenocarcinoma and its mechanisms of action remain to be elucidated. In the present study, using the human lung adenocarcinoma cell line SPC-A-1, we found that genistein decreased SPC-A-1 cell viability in both a dose and time dependent manner. Flow cytometry analysis revealed that genistein significantly induced arrest of SPC-A-1 cells at the G2/M phase of the cell cycle. Furthermore, through DNA fragmentation and TUNEL assays, we demonstrated that the addition of genistein led to SPC-A-1 apoptosis in both a dose and time dependent manner. Finally, the apoptosis pathway-related gene expression profile affected by genistein was investigated using the oligonucleotide microarray method. The result showed that the expression profile of 20 genes (ratio of genistein group/control group >2 or <0.5) related to the apoptotic pathways changed. These genes, mainly consisting of the Bcl-2 family and TNF ligand and receptor family, are involved in regulation of the apoptosis process.

  7. Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability

    OpenAIRE

    2001-01-01

    Silicon-hydrogen bonds passivate the interface defects at the silicon-silicon dioxide interface of CMOS transistors. The activation of these bonds and subsequent creation of interface traps is an important source of transistor degradation at current operating conditions. There is now evidence for a distribution in the activation energies of these bonds instead of a single threshold value. We show that conventional CMOS scaling rules are substantially affected by this energy dis...

  8. Development and Application of a New Microarray- Based Method for High-Throughput Screening of Carbohydrate Active Enzymes

    DEFF Research Database (Denmark)

    Vidal Melgosa, Silvia

    biological roles in plants and in addition to biofuel production they are extensively used in other industrial processes including in detergents, textiles, paper and the food industry. A vast repertoire of CAZymes exists in nature but there is a growing disparity between our ability to putatively identify....... The applicability of the method to identify the substrate specificities of purified uncharacterised enzymes as well as for screening CAZyme activities in complex enzyme mixtures, such as crude culture broths and plant extracts, is shown by examples presented in this thesis. We envisage that the method......The effective and sustainable use of plant biomass for second generation biofuels is of vital importance for reducing dependence on fossil fuels. Carbohydrate-active enzymes (CAZymes) that degrade lignocellulosic plant cell wall material are an important part of this effort. CAZymes have multiple...

  9. Protein microarrays for systems biology

    Institute of Scientific and Technical Information of China (English)

    Lina Yang; Shujuan Guo; Yang Li; Shumin Zhou; Shengce Tao

    2011-01-01

    Systems biology holds the key for understanding biological systems on a system level. It eventually holds the key for the treatment and cure of complex diseases such as cancer,diabetes, obesity, mental disorders, and many others. The '-omics' technologies, such as genomics, transcriptomics,proteomics, and metabonomics, are among the major driving forces of systems biology. Featured as highthroughput, miniaturized, and capable of parallel analysis,protein microarrays have already become an important technology platform for systems biology, In this review, we will focus on the system level or global analysis of biological systems using protein microarrays. Four major types of protein microarrays will be discussed: proteome microarrays, antibody microarrays, reverse-phase protein arrays,and lectin microarrays. We will also discuss the challenges and future directions of protein microarray technologies and their applications for systems biology. We strongly believe that protein microarrays will soon become an indispensable and invaluable tool for systems biology.

  10. Microarray Applications in Cancer Research

    Science.gov (United States)

    Kim, Il-Jin; Kang, Hio Chung

    2004-01-01

    DNA microarray technology permits simultaneous analysis of thousands of DNA sequences for genomic research and diagnostics applications. Microarray technology represents the most recent and exciting advance in the application of hybridization-based technology for biological sciences analysis. This review focuses on the classification (oligonucleotide vs. cDNA) and application (mutation-genotyping vs. gene expression) of microarrays. Oligonucleotide microarrays can be used both in mutation-genotyping and gene expression analysis, while cDNA microarrays can only be used in gene expression analysis. We review microarray mutation analysis, including examining the use of three oligonucleotide microarrays developed in our laboratory to determine mutations in RET, β-catenin and K-ras genes. We also discuss the use of the Affymetrix GeneChip in mutation analysis. We review microarray gene expression analysis, including the classifying of such studies into four categories: class comparison, class prediction, class discovery and identification of biomarkers. PMID:20368836

  11. CMOS imager for pointing and tracking applications

    Science.gov (United States)

    Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

    2006-01-01

    Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

  12. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  13. CMOS Law-jitter Clock Driver Design

    OpenAIRE

    2012-01-01

    [ANGLÈS] Design of a low-jitter, low-phase noise clock driver in 40 nm CMOS technology. The work is in the field of analog integrated circuit (IC) design in nanometer CMOS technologies. [CASTELLÀ] Diseño de un circuito integrado "clock driver" de bajo jitter y bajo ruido de fase en tecnología CMOS 40 nm. El trabajo se contextualiza en el campo del diseño de circuitos integrados analógicos en tecnologías CMOS nanométricas. [CATALÀ] Disseny d'un circuit "clock driver" de baix jitter i bai...

  14. Microelectronic test structures for CMOS technology

    CERN Document Server

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  15. Absorbed dose by a CMOS in radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  16. High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

    Science.gov (United States)

    Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

    2010-12-15

    A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging.

  17. An integrating CMOS APS for X-ray imaging with an in-pixel preamplifier

    Science.gov (United States)

    Abdalla, M. A.; Fröjdh, C.; Petersson, C. S.

    2001-06-01

    We present in this paper an integrating CMOS Active Pixel Sensor (APS) circuit coated with scintillator type sensors for intra-oral dental X-ray imaging systems. The photosensing element in the pixel is formed by the p-diffusion on the n-well diode. The advantage of this photosensor is its very low direct absorption of X-rays compared to the other available photosensing elements in the CMOS pixel. The pixel features an integrating capacitor in the feedback loop of a preamplifier of a finite gain in order to increase the optical sensitivity. To verify the effectiveness of this in-pixel preamplification, a prototype 32×80 element CMOS active pixel array was implemented in a 0.8 μm CMOS double poly, n-well process with a pixel pitch of 50 μm. Measured results confirmed the improved optical sensitivity performance of the APS. Various measurements on device performance are presented.

  18. Microarray and pathway analysis reveal distinct mechanisms underlying cannabinoid-mediated modulation of LPS-induced activation of BV-2 microglial cells.

    Directory of Open Access Journals (Sweden)

    Ana Juknat

    Full Text Available Cannabinoids are known to exert immunosuppressive activities. However, the mechanisms which contribute to these effects are unknown. Using lipopolysaccharide (LPS to activate BV-2 microglial cells, we examined how Δ(9-tetrahydrocannabinol (THC, the major psychoactive component of marijuana, and cannabidiol (CBD the non-psychoactive component, modulate the inflammatory response. Microarray analysis of genome-wide mRNA levels was performed using Illumina platform and the resulting expression patterns analyzed using the Ingenuity Pathway Analysis to identify functional subsets of genes, and the Ingenuity System Database to denote the gene networks regulated by CBD and THC. From the 5338 transcripts that were differentially expressed across treatments, 400 transcripts were found to be upregulated by LPS, 502 by CBD+LPS and 424 by THC+LPS, while 145 were downregulated by LPS, 297 by CBD+LPS and 149 by THC+LPS, by 2-fold or more (p≤0.005. Results clearly link the effects of CBD and THC to inflammatory signaling pathways and identify new cannabinoid targets in the MAPK pathway (Dusp1, Dusp8, Dusp2, cell cycle related (Cdkn2b, Gadd45a as well as JAK/STAT regulatory molecules (Socs3, Cish, Stat1. The impact of CBD on LPS-stimulated gene expression was greater than that of THC. We attribute this difference to the fact that CBD highly upregulated several genes encoding negative regulators of both NFκB and AP-1 transcriptional activities, such as Trib3 and Dusp1 known to be modulated through Nrf2 activation. The CBD-specific expression profile reflected changes associated with oxidative stress and glutathione depletion via Trib3 and expression of ATF4 target genes. Furthermore, the CBD affected genes were shown to be controlled by nuclear factors usually involved in regulation of stress response and inflammation, mainly via Nrf2/Hmox1 axis and the Nrf2/ATF4-Trib3 pathway. These observations indicate that CBD, and less so THC, induce a cellular stress

  19. Biolog phenotype microarrays.

    Science.gov (United States)

    Shea, April; Wolcott, Mark; Daefler, Simon; Rozak, David A

    2012-01-01

    Phenotype microarrays nicely complement traditional genomic, transcriptomic, and proteomic analysis by offering opportunities for researchers to ground microbial systems analysis and modeling in a broad yet quantitative assessment of the organism's physiological response to different metabolites and environments. Biolog phenotype assays achieve this by coupling tetrazolium dyes with minimally defined nutrients to measure the impact of hundreds of carbon, nitrogen, phosphorous, and sulfur sources on redox reactions that result from compound-induced effects on the electron transport chain. Over the years, we have used Biolog's reproducible and highly sensitive assays to distinguish closely related bacterial isolates, to understand their metabolic differences, and to model their metabolic behavior using flux balance analysis. This chapter describes Biolog phenotype microarray system components, reagents, and methods, particularly as they apply to bacterial identification, characterization, and metabolic analysis.

  20. CMOS digital pixel sensors: technology and applications

    Science.gov (United States)

    Skorka, Orit; Joseph, Dileepan

    2014-04-01

    CMOS active pixel sensor technology, which is widely used these days for digital imaging, is based on analog pixels. Transition to digital pixel sensors can boost signal-to-noise ratios and enhance image quality, but can increase pixel area to dimensions that are impractical for the high-volume market of consumer electronic devices. There are two main approaches to digital pixel design. The first uses digitization methods that largely rely on photodetector properties and so are unique to imaging. The second is based on adaptation of a classical analog-to-digital converter (ADC) for in-pixel data conversion. Imaging systems for medical, industrial, and security applications are emerging lower-volume markets that can benefit from these in-pixel ADCs. With these applications, larger pixels are typically acceptable, and imaging may be done in invisible spectral bands.

  1. Contact CMOS imaging of gaseous oxygen sensor array.

    Science.gov (United States)

    Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

    2011-10-01

    We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3](2+)) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

  2. Analyzing Microarray Data.

    Science.gov (United States)

    Hung, Jui-Hung; Weng, Zhiping

    2017-03-01

    Because there is no widely used software for analyzing RNA-seq data that has a graphical user interface, this protocol provides an example of analyzing microarray data using Babelomics. This analysis entails performing quantile normalization and then detecting differentially expressed genes associated with the transgenesis of a human oncogene c-Myc in mice. Finally, hierarchical clustering is performed on the differentially expressed genes using the Cluster program, and the results are visualized using TreeView.

  3. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  4. CMOS circuits for analog signal processing

    NARCIS (Netherlands)

    Wallinga, Hans

    1988-01-01

    Design choices in CMOS analog signal processing circuits are presented. Special attention is focussed on continuous-time filter technologies. The basics of MOSFET-C continuous-time filters and CMOS Square Law Circuits are explained at the hand of a graphical MOST characteristics representation.

  5. Nanosecond monolithic CMOS readout cell

    Science.gov (United States)

    Souchkov, Vitali V.

    2004-08-24

    A pulse shaper is implemented in monolithic CMOS with a delay unit formed of a unity gain buffer. The shaper is formed of a difference amplifier having one input connected directly to an input signal and a second input connected to a delayed input signal through the buffer. An elementary cell is based on the pulse shaper and a timing circuit which gates the output of an integrator connected to the pulse shaper output. A detector readout system is formed of a plurality of elementary cells, each connected to a pixel of a pixel array, or to a microstrip of a plurality of microstrips, or to a detector segment.

  6. Optoelectronic circuits in nanometer CMOS technology

    CERN Document Server

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  7. Microarray Assisted Gene Discovery in Ulcerative Colitis

    DEFF Research Database (Denmark)

    Brusgaard, Klaus

    ), and microarray based expression studies. In IBD the increased production of chemo attractants from the inflamed microenvironment results in recruitment of activated CD4+ T lymphocytes which results in tissue damage. Where Th1 cell-derived cytokines has been reported to be essential mediators in CD with high (IFN...

  8. Design of a covalently bonded glycosphingolipid microarray

    DEFF Research Database (Denmark)

    Arigi, Emma; Blixt, Klas Ola; Buschard, Karsten

    2012-01-01

    -mercaptoethylamine, was also tested. Underivatized or linker-derivatized lyso-GSL were then immobilized on N-hydroxysuccinimide- or epoxide-activated glass microarray slides and probed with carbohydrate binding proteins of known or partially known specificities (i.e., cholera toxin B-chain; peanut agglutinin...

  9. CMOS Pixel Development for the ATLAS Experiment at HL-LHC

    CERN Document Server

    Gaudiello, Andrea; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  10. CMOS pixel development for the ATLAS experiment at HL-LHC

    CERN Document Server

    Risti{c}, Branislav; The ATLAS collaboration

    2017-01-01

    To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

  11. Implantable optogenetic device with CMOS IC technology for simultaneous optical measurement and stimulation

    Science.gov (United States)

    Haruta, Makito; Kamiyama, Naoya; Nakajima, Shun; Motoyama, Mayumi; Kawahara, Mamiko; Ohta, Yasumi; Yamasaki, Atsushi; Takehara, Hiroaki; Noda, Toshihiko; Sasagawa, Kiyotaka; Ishikawa, Yasuyuki; Tokuda, Takashi; Hashimoto, Hitoshi; Ohta, Jun

    2017-05-01

    In this study, we have developed an implantable optogenetic device that can measure and stimulate neurons by an optical method based on CMOS IC technology. The device consist of a blue LED array for optically patterned stimulation, a CMOS image sensor for acquiring brain surface image, and eight green LEDs surrounding the CMOS image sensor for illumination. The blue LED array is placed on the CMOS image sensor. We implanted the device in the brain of a genetically modified mouse and successfully demonstrated the stimulation of neurons optically and simultaneously acquire intrinsic optical images of the brain surface using the image sensor. The integrated device can be used for simultaneously measuring and controlling neuronal activities in a living animal, which is important for the artificial control of brain functions.

  12. A CMOS silicon spin qubit

    Science.gov (United States)

    Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

    2016-11-01

    Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

  13. Accelerated life testing effects on CMOS microcircuit characteristics, phase 1

    Science.gov (United States)

    Maximow, B.

    1976-01-01

    An accelerated life test of sufficient duration to generate a minimum of 50% cumulative failures in lots of CMOS devices was conducted to provide a basis for determining the consistency of activation energy at 250 C. An investigation was made to determine whether any thresholds were exceeded during the high temperature testing, which could trigger failure mechanisms unique to that temperature. The usefulness of the 250 C temperature test as a predictor of long term reliability was evaluated.

  14. Time-course microarrays reveal early activation of the immune transcriptome and adipokine dysregulation leads to fibrosis in visceral adipose depots during diet-induced obesity

    Directory of Open Access Journals (Sweden)

    Kwon Eun-Young

    2012-09-01

    Full Text Available Abstract Background Visceral white adipose tissue (WAT hypertrophy, adipokine production, inflammation and fibrosis are strongly associated with obesity, but the time-course of these changes in-vivo are not fully understood. Therefore, the aim of this study was to establish the time-course of changes in adipocyte morphology, adipokines and the global transcriptional landscape in visceral WAT during the development of diet-induced obesity. Results C57BL/6 J mice were fed a high-fat diet (HFD or normal diet (ND and sacrificed at 8 time-points over 24 weeks. Excessive fat accumulation was evident in visceral WAT depots (Epidydimal, Perirenal, Retroperitoneum, Mesentery after 2–4 weeks. Fibrillar collagen accumulation was evident in epidydimal adipocytes at 24 weeks. Plasma adipokines, leptin, resistin and adipsin, increased early and time-dependently, while adiponectin decreased late after 20 weeks. Only plasma leptin and adiponectin levels were associated with their respective mRNA levels in visceral WAT. Time-course microarrays revealed early and sustained activation of the immune transcriptome in epididymal and mesenteric depots. Up-regulated inflammatory genes included pro-inflammatory cytokines, chemokines (Tnf, Il1rn, Saa3, Emr1, Adam8, Itgam, Ccl2, 3, 4, 6, 7 and 9 and their upstream signalling pathway genes (multiple Toll-like receptors, Irf5 and Cd14. Early changes also occurred in fibrosis, extracellular matrix, collagen and cathepsin related-genes, but histological fibrosis was only visible in the later stages. Conclusions In diet-induced obesity, early activation of TLR-mediated inflammatory signalling cascades by CD antigen genes, leads to increased expression of pro-inflammatory cytokines and chemokines, resulting in chronic low-grade inflammation. Early changes in collagen genes may trigger the accumulation of ECM components, promoting fibrosis in the later stages of diet-induced obesity. New therapeutic approaches

  15. Time-course microarrays reveal early activation of the immune transcriptome and adipokine dysregulation leads to fibrosis in visceral adipose depots during diet-induced obesity.

    Science.gov (United States)

    Kwon, Eun-Young; Shin, Su-Kyung; Cho, Yun-Young; Jung, Un Ju; Kim, Eunjung; Park, Taesun; Park, Jung Han Yoon; Yun, Jong Won; McGregor, Robin A; Park, Yong Bok; Choi, Myung-Sook

    2012-09-04

    Visceral white adipose tissue (WAT) hypertrophy, adipokine production, inflammation and fibrosis are strongly associated with obesity, but the time-course of these changes in-vivo are not fully understood. Therefore, the aim of this study was to establish the time-course of changes in adipocyte morphology, adipokines and the global transcriptional landscape in visceral WAT during the development of diet-induced obesity. C57BL/6 J mice were fed a high-fat diet (HFD) or normal diet (ND) and sacrificed at 8 time-points over 24 weeks. Excessive fat accumulation was evident in visceral WAT depots (Epidydimal, Perirenal, Retroperitoneum, Mesentery) after 2-4 weeks. Fibrillar collagen accumulation was evident in epidydimal adipocytes at 24 weeks. Plasma adipokines, leptin, resistin and adipsin, increased early and time-dependently, while adiponectin decreased late after 20 weeks. Only plasma leptin and adiponectin levels were associated with their respective mRNA levels in visceral WAT. Time-course microarrays revealed early and sustained activation of the immune transcriptome in epididymal and mesenteric depots. Up-regulated inflammatory genes included pro-inflammatory cytokines, chemokines (Tnf, Il1rn, Saa3, Emr1, Adam8, Itgam, Ccl2, 3, 4, 6, 7 and 9) and their upstream signalling pathway genes (multiple Toll-like receptors, Irf5 and Cd14). Early changes also occurred in fibrosis, extracellular matrix, collagen and cathepsin related-genes, but histological fibrosis was only visible in the later stages. In diet-induced obesity, early activation of TLR-mediated inflammatory signalling cascades by CD antigen genes, leads to increased expression of pro-inflammatory cytokines and chemokines, resulting in chronic low-grade inflammation. Early changes in collagen genes may trigger the accumulation of ECM components, promoting fibrosis in the later stages of diet-induced obesity. New therapeutic approaches targeting visceral adipose tissue genes altered early by HFD

  16. The use of microarrays in microbial ecology

    Energy Technology Data Exchange (ETDEWEB)

    Andersen, G.L.; He, Z.; DeSantis, T.Z.; Brodie, E.L.; Zhou, J.

    2009-09-15

    Microarrays have proven to be a useful and high-throughput method to provide targeted DNA sequence information for up to many thousands of specific genetic regions in a single test. A microarray consists of multiple DNA oligonucleotide probes that, under high stringency conditions, hybridize only to specific complementary nucleic acid sequences (targets). A fluorescent signal indicates the presence and, in many cases, the abundance of genetic regions of interest. In this chapter we will look at how microarrays are used in microbial ecology, especially with the recent increase in microbial community DNA sequence data. Of particular interest to microbial ecologists, phylogenetic microarrays are used for the analysis of phylotypes in a community and functional gene arrays are used for the analysis of functional genes, and, by inference, phylotypes in environmental samples. A phylogenetic microarray that has been developed by the Andersen laboratory, the PhyloChip, will be discussed as an example of a microarray that targets the known diversity within the 16S rRNA gene to determine microbial community composition. Using multiple, confirmatory probes to increase the confidence of detection and a mismatch probe for every perfect match probe to minimize the effect of cross-hybridization by non-target regions, the PhyloChip is able to simultaneously identify any of thousands of taxa present in an environmental sample. The PhyloChip is shown to reveal greater diversity within a community than rRNA gene sequencing due to the placement of the entire gene product on the microarray compared with the analysis of up to thousands of individual molecules by traditional sequencing methods. A functional gene array that has been developed by the Zhou laboratory, the GeoChip, will be discussed as an example of a microarray that dynamically identifies functional activities of multiple members within a community. The recent version of GeoChip contains more than 24,000 50mer

  17. Compressive Sensing DNA Microarrays

    Directory of Open Access Journals (Sweden)

    Richard G. Baraniuk

    2009-01-01

    Full Text Available Compressive sensing microarrays (CSMs are DNA-based sensors that operate using group testing and compressive sensing (CS principles. In contrast to conventional DNA microarrays, in which each genetic sensor is designed to respond to a single target, in a CSM, each sensor responds to a set of targets. We study the problem of designing CSMs that simultaneously account for both the constraints from CS theory and the biochemistry of probe-target DNA hybridization. An appropriate cross-hybridization model is proposed for CSMs, and several methods are developed for probe design and CS signal recovery based on the new model. Lab experiments suggest that in order to achieve accurate hybridization profiling, consensus probe sequences are required to have sequence homology of at least 80% with all targets to be detected. Furthermore, out-of-equilibrium datasets are usually as accurate as those obtained from equilibrium conditions. Consequently, one can use CSMs in applications in which only short hybridization times are allowed.

  18. Integrated RF MEMS/CMOS Devices

    CERN Document Server

    Mansour, R R; Bakeri-Kassem, M

    2008-01-01

    A maskless post-processing technique for CMOS chips is developed that enables the fabrication of RF MEMS parallel-plate capacitors with a high quality factor and a very compact size. Simulations and measured results are presented for several MEMS/CMOS capacitors. A 2-pole coupled line tunable bandpass filter with a center frequency of 9.5 GHz is designed, fabricated and tested. A tuning range of 17% is achieved using integrated variable MEMS/CMOS capacitors with a quality factor exceeding 20. The tunable filter occupies a chip area of 1.2 x 2.1 mm2.

  19. Spectrometry with consumer-quality CMOS cameras.

    Science.gov (United States)

    Scheeline, Alexander

    2015-01-01

    Many modern spectrometric instruments use diode arrays, charge-coupled arrays, or CMOS cameras for detection and measurement. As portable or point-of-use instruments are desirable, one would expect that instruments using the cameras in cellular telephones and tablet computers would be the basis of numerous instruments. However, no mass market for such devices has yet developed. The difficulties in using megapixel CMOS cameras for scientific measurements are discussed, and promising avenues for instrument development reviewed. Inexpensive alternatives to use of the built-in camera are also mentioned, as the long-term question is whether it is better to overcome the constraints of CMOS cameras or to bypass them.

  20. Nanopore-CMOS Interfaces for DNA Sequencing.

    Science.gov (United States)

    Magierowski, Sebastian; Huang, Yiyun; Wang, Chengjie; Ghafar-Zadeh, Ebrahim

    2016-08-06

    DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews existing and emerging means of interfacing nanopores to CMOS technology with an emphasis on massively-arrayed structures. It presents this in the context of incumbent DNA sequencing techniques, reviews and quantifies nanopore characteristics and models and presents CMOS circuit methods for the amplification of low-current nanopore signals in such interfaces.

  1. Harmonic Distortion in CMOS Current Mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1998-01-01

    One of the origins of harmonic distortion in CMOS current mirrors is the inevitable mismatch between the MOS transistors involved. In this paper we examine both single current mirrors and complementary class AB current mirrors and develop an analytical model for the mismatch induced harmonic...... distortion. This analytical model is verified through simulations and is used for a discussion of the impact of mismatch on harmonic distortion properties of CMOS current mirrors. It is found that distortion levels somewhat below 1% can be attained by carefully matching the mirror transistors but ultra low...... distortion is not achievable with CMOS current mirrors...

  2. Bridging faults in BiCMOS circuits

    Science.gov (United States)

    Menon, Sankaran M.; Malaiya, Yashwant K.; Jayasumana, Anura P.

    1993-01-01

    Combining the advantages of CMOS and bipolar, BiCMOS is emerging as a major technology for many high performance digital and mixed signal applications. Recent investigations revealed that bridging faults can be a major failure mode in IC's. Effects of bridging faults in BiCMOS circuits are presented. Bridging faults between logical units without feedback and logical units with feedback are considered. Several bridging faults can be detected by monitoring the power supply current (I(sub DDQ) monitoring). Effects of bridging faults and bridging resistance on output logic levels were examined along with their effects on noise immunity.

  3. Carbon Nanotube Integration with a CMOS Process

    OpenAIRE

    Perez, Maximiliano S.; Betiana Lerner; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Pedro M. Julian; Pablo S. Mandolesi; Fabian A. Buffa; Alfredo Boselli; Alberto Lamagna

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new rout...

  4. Carbon nanotube integration with a CMOS process.

    Science.gov (United States)

    Perez, Maximiliano S; Lerner, Betiana; Resasco, Daniel E; Pareja Obregon, Pablo D; Julian, Pedro M; Mandolesi, Pablo S; Buffa, Fabian A; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

  5. Carbon Nanotube Integration with a CMOS Process

    Directory of Open Access Journals (Sweden)

    Maximiliano S. Perez

    2010-04-01

    Full Text Available This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

  6. Carbon Nanotube Integration with a CMOS Process

    Science.gov (United States)

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  7. Monolithic CMOS-MEMS integration for high-g accelerometers

    Science.gov (United States)

    Narasimhan, Vinayak; Li, Holden; Tan, Chuan Seng

    2014-10-01

    This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC's SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.

  8. Micromachined high-performance RF passives in CMOS substrate

    Science.gov (United States)

    Li, Xinxin; Ni, Zao; Gu, Lei; Wu, Zhengzheng; Yang, Chen

    2016-11-01

    This review systematically addresses the micromachining technologies used for the fabrication of high-performance radio-frequency (RF) passives that can be integrated into low-cost complementary metal-oxide semiconductor (CMOS)-grade (i.e. low-resistivity) silicon wafers. With the development of various kinds of post-CMOS-compatible microelectromechanical systems (MEMS) processes, 3D structural inductors/transformers, variable capacitors, tunable resonators and band-pass/low-pass filters can be compatibly integrated into active integrated circuits to form monolithic RF system-on-chips. By using MEMS processes, including substrate modifying/suspending and LIGA-like metal electroplating, both the highly lossy substrate effect and the resistive loss can be largely eliminated and depressed, thereby meeting the high-performance requirements of telecommunication applications.

  9. Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

    Science.gov (United States)

    Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

    1995-04-01

    While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors

  10. Improved Space Object Orbit Determination Using CMOS Detectors

    Science.gov (United States)

    Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

    2014-09-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario

  11. First result on biased CMOS MAPs-on-diamond devices

    Energy Technology Data Exchange (ETDEWEB)

    Kanxheri, K., E-mail: keida.kanxheri@pg.infn.it [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Citroni, M.; Fanetti, S. [LENS Firenze, Florence (Italy); Lagomarsino, S. [Università degli Studi di Firenze, Florence (Italy); INFN Firenze, Pisa (Italy); Morozzi, A. [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Parrini, G. [Università degli Studi di Firenze, Florence (Italy); Passeri, D. [Università degli Studi di Perugia, Perugia (Italy); INFN Perugia, Perugia (Italy); Sciortino, S. [Università degli Studi di Firenze, Florence (Italy); INFN Firenze, Pisa (Italy); Servoli, L. [INFN Perugia, Perugia (Italy)

    2015-10-01

    Recently a new type of device, the MAPS-on-diamond, obtained bonding a thinned to 25 μm CMOS Monolithic Active Pixel Sensor to a standard 500 μm pCVD diamond substrate, has been proposed and fabricated, allowing a highly segmented readout (10×10 μm pixel size) of the signal produced in the diamond substrate. The bonding between the two materials has been obtained using a new laser technique to deliver the needed energy at the interface. A biasing scheme has been adopted to polarize the diamond substrate to allow the charge transport inside the diamond without disrupting the functionalities of the CMOS Monolithic Active Pixel Sensor. The main concept of this class of devices is the capability of the charges generated in the diamond by ionizing radiation to cross the silicon–diamond interface and to be collected by the MAPS photodiodes. In this work we demonstrate that such passage occurs and measure its overall efficiency. This study has been carried out first calibrating the CMOS MAPS with monochromatic X-rays, and then testing the device with charged particles (electrons) either with and without biasing the diamond substrate, to compare the amount of signal collected.

  12. Electrical Interconnections Through CMOS Wafers

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... these issues and presents the development leading to applicable technological solutions. The via technology developed in this work enable effective utilization of the available surface area on both sides of the amplifier chip for redistribution as well as placement of passive components and external...... connections. A process for wafer level packaging and assembly of chips with vias is presented in this thesis. Discrete components, capacitors and resistors, are assembled on the backside of the amplifier chips by screen printing of solder paste, pick and place of components, and reflow soldering. Since...

  13. Analog CMOS contrastive Hebbian networks

    Science.gov (United States)

    Schneider, Christian; Card, Howard

    1992-09-01

    CMOS VLSI circuits implementing an analog neural network with on-chip contrastive Hebbian learning and capacitive synaptic weight storage have been designed and fabricated. Weights are refreshed by periodic repetition of the training data. To evaluate circuit performance in a medium-sized system, these circuits were used to build a 132 synapse neural network. An adaptive neural system, such as the one described in this paper, can compensate for imperfections in the components from which it is constructed, and thus it is possible to build this type of system using simple, silicon area-efficient analog circuits. Because these analog VLSI circuits are far more compact than their digital counterparts, analog VLSI neural network implementations are potentially more efficient than digital ones.

  14. Ultralow-loss CMOS copper plasmonic waveguides

    DEFF Research Database (Denmark)

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

    2016-01-01

    with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  15. CMOS circuits for passive wireless microsystems

    CERN Document Server

    Yuan, Fei

    2011-01-01

    Here is a comprehensive examination of CMOS circuits for passive wireless microsystems. Covers design challenges, fundamental issues of ultra-low power wireless communications, radio-frequency power harvesting, and advanced design techniques, and more.

  16. Nanometer CMOS ICs from basics to ASICs

    CERN Document Server

    J M Veendrick, Harry

    2017-01-01

    This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

  17. DNA Microarray-Based Diagnostics.

    Science.gov (United States)

    Marzancola, Mahsa Gharibi; Sedighi, Abootaleb; Li, Paul C H

    2016-01-01

    The DNA microarray technology is currently a useful biomedical tool which has been developed for a variety of diagnostic applications. However, the development pathway has not been smooth and the technology has faced some challenges. The reliability of the microarray data and also the clinical utility of the results in the early days were criticized. These criticisms added to the severe competition from other techniques, such as next-generation sequencing (NGS), impacting the growth of microarray-based tests in the molecular diagnostic market.Thanks to the advances in the underlying technologies as well as the tremendous effort offered by the research community and commercial vendors, these challenges have mostly been addressed. Nowadays, the microarray platform has achieved sufficient standardization and method validation as well as efficient probe printing, liquid handling and signal visualization. Integration of various steps of the microarray assay into a harmonized and miniaturized handheld lab-on-a-chip (LOC) device has been a goal for the microarray community. In this respect, notable progress has been achieved in coupling the DNA microarray with the liquid manipulation microsystem as well as the supporting subsystem that will generate the stand-alone LOC device.In this chapter, we discuss the major challenges that microarray technology has faced in its almost two decades of development and also describe the solutions to overcome the challenges. In addition, we review the advancements of the technology, especially the progress toward developing the LOC devices for DNA diagnostic applications.

  18. CMOS Compatible Ultra-Compact Modulator

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.

    2014-01-01

    A planar layout for an ultra-compact plasmonic modulator is proposed and numerically investigated. Our device utilizes potentially CMOS compatible materials and can achieve 3-dB modulation in just 65nm and insertion loss <1dB at telecommunication wavelengths.......A planar layout for an ultra-compact plasmonic modulator is proposed and numerically investigated. Our device utilizes potentially CMOS compatible materials and can achieve 3-dB modulation in just 65nm and insertion loss

  19. CMOS SiPM with integrated amplifier

    Science.gov (United States)

    Schwinger, Alexander; Brockherde, Werner; Hosticka, Bedrich J.; Vogt, Holger

    2017-02-01

    The integration of silicon photomultiplier (SiPM) and frontend electronics in a suitable optoelectronic CMOS process is a promising approach to increase the versatility of single-photon avalanche diode (SPAD)-based singlephoton detectors. By integrating readout amplifiers, the device output capacitance can be reduced to minimize the waveform tail, which is especially important for large area detectors (>10 × 10mm2). Possible architectures include a single readout amplifier for the whole detector, which reduces the output capacitance to 1:1 pF at minimal reduction in detector active area. On the other hand, including a readout amplifier in every SiPM cell would greatly improve the total output capacitance by minimizing the influence of metal routing parasitic capacitance, but requiring a prohibitive amount of detector area. As tradeoff, the proposed detector features one readout amplifier for each column of the detector matrix to allow for a moderate reduction in output capacitance while allowing the electronics to be placed in the periphery of the active detector area. The presented detector with a total size of 1.7 ♢ 1.0mm2 features 400 cells with a 50 μm pitch, where the signal of each column of 20 SiPM cells is summed in a readout channel. The 20 readout channels are subsequently summed into one output channel, to allow the device to be used as a drop-in replacement for commonly used analog SiPMs.

  20. Design of a covalently bonded glycosphingolipid microarray.

    Science.gov (United States)

    Arigi, Emma; Blixt, Ola; Buschard, Karsten; Clausen, Henrik; Levery, Steven B

    2012-01-01

    Glycosphingolipids (GSLs) are well known ubiquitous constituents of all eukaryotic cell membranes, yet their normal biological functions are not fully understood. As with other glycoconjugates and saccharides, solid phase display on microarrays potentially provides an effective platform for in vitro study of their functional interactions. However, with few exceptions, the most widely used microarray platforms display only the glycan moiety of GSLs, which not only ignores potential modulating effects of the lipid aglycone, but inherently limits the scope of application, excluding, for example, the major classes of plant and fungal GSLs. In this work, a prototype "universal" GSL-based covalent microarray has been designed, and preliminary evaluation of its potential utility in assaying protein-GSL binding interactions investigated. An essential step in development involved the enzymatic release of the fatty acyl moiety of the ceramide aglycone of selected mammalian GSLs with sphingolipid N-deacylase (SCDase). Derivatization of the free amino group of a typical lyso-GSL, lyso-G(M1), with a prototype linker assembled from succinimidyl-[(N-maleimidopropionamido)-diethyleneglycol] ester and 2-mercaptoethylamine, was also tested. Underivatized or linker-derivatized lyso-GSL were then immobilized on N-hydroxysuccinimide- or epoxide-activated glass microarray slides and probed with carbohydrate binding proteins of known or partially known specificities (i.e., cholera toxin B-chain; peanut agglutinin, a monoclonal antibody to sulfatide, Sulph 1; and a polyclonal antiserum reactive to asialo-G(M2)). Preliminary evaluation of the method indicated successful immobilization of the GSLs, and selective binding of test probes. The potential utility of this methodology for designing covalent microarrays that incorporate GSLs for serodiagnosis is discussed.

  1. Evaluation of toxicity of the mycotoxin citrinin using yeast ORF DNA microarray and Oligo DNA microarray

    Directory of Open Access Journals (Sweden)

    Nobumasa Hitoshi

    2007-04-01

    Full Text Available Abstract Background Mycotoxins are fungal secondary metabolites commonly present in feed and food, and are widely regarded as hazardous contaminants. Citrinin, one of the very well known mycotoxins that was first isolated from Penicillium citrinum, is produced by more than 10 kinds of fungi, and is possibly spread all over the world. However, the information on the action mechanism of the toxin is limited. Thus, we investigated the citrinin-induced genomic response for evaluating its toxicity. Results Citrinin inhibited growth of yeast cells at a concentration higher than 100 ppm. We monitored the citrinin-induced mRNA expression profiles in yeast using the ORF DNA microarray and Oligo DNA microarray, and the expression profiles were compared with those of the other stress-inducing agents. Results obtained from both microarray experiments clustered together, but were different from those of the mycotoxin patulin. The oxidative stress response genes – AADs, FLR1, OYE3, GRE2, and MET17 – were significantly induced. In the functional category, expression of genes involved in "metabolism", "cell rescue, defense and virulence", and "energy" were significantly activated. In the category of "metabolism", genes involved in the glutathione synthesis pathway were activated, and in the category of "cell rescue, defense and virulence", the ABC transporter genes were induced. To alleviate the induced stress, these cells might pump out the citrinin after modification with glutathione. While, the citrinin treatment did not induce the genes involved in the DNA repair. Conclusion Results from both microarray studies suggest that citrinin treatment induced oxidative stress in yeast cells. The genotoxicity was less severe than the patulin, suggesting that citrinin is less toxic than patulin. The reproducibility of the expression profiles was much better with the Oligo DNA microarray. However, the Oligo DNA microarray did not completely overcome cross

  2. Transfection microarray and the applications.

    Science.gov (United States)

    Miyake, Masato; Yoshikawa, Tomohiro; Fujita, Satoshi; Miyake, Jun

    2009-05-01

    Microarray transfection has been extensively studied for high-throughput functional analysis of mammalian cells. However, control of efficiency and reproducibility are the critical issues for practical use. By using solid-phase transfection accelerators and nano-scaffold, we provide a highly efficient and reproducible microarray-transfection device, "transfection microarray". The device would be applied to the limited number of available primary cells and stem cells not only for large-scale functional analysis but also reporter-based time-lapse cellular event analysis.

  3. Neutron absorbed dose in a pacemaker CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-11-15

    The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

  4. New package for CMOS sensors

    Science.gov (United States)

    Diot, Jean-Luc; Loo, Kum Weng; Moscicki, Jean-Pierre; Ng, Hun Shen; Tee, Tong Yan; Teysseyre, Jerome; Yap, Daniel

    2004-02-01

    Cost is the main drawback of existing packages for C-MOS sensors (mainly CLCC family). Alternative packages are thus developed world-wide. And in particular, S.T.Microelectronics has studied a low cost alternative packages based on QFN structure, still with a cavity. Intensive work was done to optimize the over-molding operation forming the cavity onto a metallic lead-frame (metallic lead-frame is a low cost substrate allowing very good mechanical definition of the final package). Material selection (thermo-set resin and glue for glass sealing) was done through standard reliability tests for cavity packages (Moisture Sensitivity Level 3 followed by temperature cycling, humidity storage and high temperature storage). As this package concept is new (without leads protruding the molded cavity), the effect of variation of package dimensions, as well as board lay-out design, are simulated on package life time (during temperature cycling, thermal mismatch between board and package leads to thermal fatigue of solder joints). These simulations are correlated with an experimental temperature cycling test with daisy-chain packages.

  5. Microarray Scanner for Fluorescence Detection

    Institute of Scientific and Technical Information of China (English)

    Wang Liqiang; Lu zukang; Li Yingsheng; Zheng Xufeng

    2003-01-01

    A novel pseudo confocal microarray scanner is introduced, in which one dimension scanning is performed by a galvanometer optical scanner and a telecentric objective, another dimension scanning is performed by a stepping motor.

  6. CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

    Data.gov (United States)

    Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

  7. Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process

    Science.gov (United States)

    Mohammed Napiah, Zul Atfyi Fauzan; Hishiki, Takuya; Iiyama, Koichi

    2017-07-01

    Avalanche photodiodes fabricated by CMOS process (CMOS-APDs) have features of high avalanche gain below 10 V, wide bandwidth over 5 GHz, and easy integration with electronic circuits. In CMOS-APDs, guard ring structure is introduced for high-speed operation by canceling photo-generated carriers in the substrate at the sacrifice of the responsivity. We describe here wavelength dependence of the responsivity and the bandwidth of the CMOS-APDs with shorted and opened guard ring structure.

  8. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    OpenAIRE

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-01-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal a...

  9. Reanalysis of microarray data reveals insights into altered transcriptional activity of T helper 17 and regulatory T cell signaling in psoriasis

    Directory of Open Access Journals (Sweden)

    Kotb I

    2013-12-01

    Full Text Available Iman Kotb,1 Caroline Meharg,2 Robert N Barker,1 Anthony Ormerod11Institute of Medical Sciences, University of Aberdeen, Aberdeen, Scotland, UK; 2Institute for Global Food Security, Queen's University, Belfast, Northern IrelandAbstract: Identifying differential expression of genes in psoriatic and healthy skin by microarray data analysis is a key approach to understand the pathogenesis of psoriasis. Analysis of more than one dataset to identify genes commonly upregulated reduces the likelihood of false positives and narrows down the possible signature genes. Genes controlling the critical balance between T helper 17 and regulatory T cells are of special interest in psoriasis. Our objectives were to identify genes that are consistently upregulated in lesional skin from three published microarray datasets. We carried out a reanalysis of gene expression data extracted from three experiments on samples from psoriatic and nonlesional skin using the same stringency threshold and software and further compared the expression levels of 92 genes related to the T helper 17 and regulatory T cell signaling pathways. We found 73 probe sets representing 57 genes commonly upregulated in lesional skin from all datasets. These included 26 probe sets representing 20 genes that have no previous link to the etiopathogenesis of psoriasis. These genes may represent novel therapeutic targets and surely need more rigorous experimental testing to be validated. Our analysis also identified 12 of 92 genes known to be related to the T helper 17 and regulatory T cell signaling pathways, and these were found to be differentially expressed in the lesional skin samples.Keywords: psoriasis, gene array analysis, gene expression profiling

  10. Delay estimation for CMOS functional cells

    DEFF Research Database (Denmark)

    Madsen, Jan

    1991-01-01

    Presents a new RC tree network model for delay estimation of CMOS functional cells. The model is able to reflect topological changes within a cell, which is of particular interest when doing performance driven layout synthesis. Further, a set of algorithms to perform worst case analysis on arbitr......Presents a new RC tree network model for delay estimation of CMOS functional cells. The model is able to reflect topological changes within a cell, which is of particular interest when doing performance driven layout synthesis. Further, a set of algorithms to perform worst case analysis...... on arbitrary CMOS functional cells using the proposed delay model, is presented. Both model and algorithms have been implemented as a part of a cell compiler (CELLO) working in an experimental silicon compiler environment....

  11. CMOS Integrated Capacitive DC-DC Converters

    CERN Document Server

    Van Breussegem, Tom

    2013-01-01

    This book provides a detailed analysis of all aspects of capacitive DC-DC converter design: topology selection, control loop design and noise mitigation. Readers will benefit from the authors’ systematic overview that starts from the ground up, in-depth circuit analysis and a thorough review of recently proposed techniques and design methodologies.  Not only design techniques are discussed, but also implementation in CMOS is shown, by pinpointing the technological opportunities of CMOS and demonstrating the implementation based on four state-of-the-art prototypes.  Provides a detailed analysis of all aspects of capacitive DC-DC converter design;  Analyzes the potential of this type of DC-DC converter and introduces a number of techniques to unleash their full potential; Combines system theory with practical implementation techniques; Includes unique analysis of CMOS technology for this application; Provides in-depth analysis of four fabricated prototypes.

  12. CMOS-compatible LVOF-based visible microspectrometer

    NARCIS (Netherlands)

    Emadi, A.; Wu, H.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    This paper reports on a CMOS-Compatible Linear Variable Optical Filter (LVOF) visible micro-spectrometer. The CMOS-compatible post process for fabrication of the LVOF has been used for integration of the LVOF with a CMOS chip containing a 128-element photodiode array and readout circuitry. Fabricati

  13. Noise in sub-micron CMOS image sensors

    NARCIS (Netherlands)

    Wang, X.

    2008-01-01

    CMOS image sensors are devices that convert illumination signals (light intensity) into electronic signals. The goal of this thesis has been to analyze dominate noise sources in CMOS imagers and to improve the image quality by reducing the noise generated in the CMOS image sensor pixels.

  14. An RF (R) MS Power Detector in Standard CMOS

    NARCIS (Netherlands)

    Aa, van der F.H.J.

    2006-01-01

    This Master thesis describes the research towards the integration of RF power detectors for 3G cellular phones and base stations in CMOS technology1. It is a feasibility study with the emphasis on the identification of fundamental limitations of CMOS (particularly CMOS9) and of a number of squaring

  15. Resistor Extends Life Of Battery In Clocked CMOS Circuit

    Science.gov (United States)

    Wells, George H., Jr.

    1991-01-01

    Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

  16. Deposition of titanium dioxide nanoparticles on the membrane of a CMOS-MEMS resonator

    Science.gov (United States)

    Ahmed, A. Y.; Dennis, J. O.; Khir, M. H. Md; Saad, M. N. Mohamad

    2014-10-01

    A CMOS-MEMS resonator is optimized as a highly sensitive gas sensor. The principle of detection is based on change in resonant frequency of the resonator due to adsorption/absorption of trace gases onto the active material on the resonator membrane. The resonator was successfully fabricated using 0.35 μm CMOS technology and post-CMOS micromachining process. The post-CMOS process is used to etch the silicon substrate and silicon oxide to release the suspended structures of the devices. Preliminary trials of nanocrystalline Titania paste (TiO2) was screen-printed on three aluminum plates of sizes 2mm × 2 mm. One of the samples was analysed as prepared while the other two samples were sintered at 300°C and 550°C, respectively. Physical observation indicated a change of the color for heated samples as compared to the unheated one. EDX results indicates a carbon (C) peak with average weight % of 18.816 in the as prepared sample and absence of the peaks for the samples sintered at 300°C and 550°C. EDX results also show that the TiO2 used consists of a uniform distribution of spherical shaped nanoparticles with a diameter of about 13.49 to 48.42 nm. Finally, the Titania paste was successfully deposit on the membrane of the CMOS-MEMS resonator for use as the gas sensitive membrane of the sensor.

  17. Design and Performance Analysis of Nine Stages CMOS Based Ring Oscillator

    Directory of Open Access Journals (Sweden)

    Sushil Kumar

    2012-07-01

    Full Text Available This paper deals with the design and performance analysis of a ring oscillator using CMOS 45nm technology process in Cadence virtuoso environment. The design of optimal Analog and Mixed Signal (AMS very large scale integrated circuits (VLSI is a challenging task for the integrated circuit(ICdesigner. A Ring Oscillator is an active device which is made up of odd number of NOT gates and whose output oscillates between two voltage levels representing high and low. There are a number of challenges ahead while designing the CMOS Ring Oscillator which are delay, noise and glitches. CMOS is the technology of choice for many applications, CMOS oscillators with low power, phase noise and timing jitter are highly desired. In this paper, we have designed a CMOS ring oscillator with nine stages. Previously, the researchers were unable to reduce the phase noise in ring oscillators substantially with nine stages. We have successfully reduced the phase noise to -6.4kdBc/Hz at 2GHz center frequency of oscillation.

  18. Design and Performance Analysis of Nine Stages CMOS Based Ring Oscillator

    Directory of Open Access Journals (Sweden)

    Sushil Kumar

    2012-06-01

    Full Text Available This paper deals with the design and performance analysis of a ring oscillator using CMOS 45nm technology process in Cadence virtuoso environment. The design of optimal Analog and Mixed Signal (AMS very large scale integrated circuits (VLSI is a challenging task for the integrated circuit(ICdesigner. A Ring Oscillator is an active device which is made up of odd number of NOT gates and whose output oscillates between two voltage levels representing high and low. There are a number of challenges ahead while designing the CMOS Ring Oscillator which are delay, noise and glitches. CMOS is the technology of choice for many applications, CMOS oscillators with low power, phase noise and timing jitter are highly desired. In this paper, we have designed a CMOS ring oscillator with nine stages. Previously, the researchers were unable to reduce the phase noise in ring oscillators substantially with nine stages. We have successfully reduced the phase noise to -6.4kdBc/Hz at 2GHz center frequency of oscillation.

  19. 60-GHz CMOS phase-locked loops

    CERN Document Server

    Cheema, Hammad M; van Roermund, Arthur HM

    2010-01-01

    The promising high data rate wireless applications at millimeter wave frequencies in general and 60 GHz in particular have gained much attention in recent years. However, challenges related to circuit, layout and measurements during mm-wave CMOS IC design have to be overcome before they can become viable for mass market. ""60-GHz CMOS Phase-Locked Loops"" focusing on phase-locked loops for 60 GHz wireless transceivers elaborates these challenges and proposes solutions for them. The system level design to circuit level implementation of the complete PLL, along with separate implementations of i

  20. Scaling CMOS devices through alternative structures

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The conventional wisdom holds that CMOS devices cannot be scaled much further from where they are today because of several device physics limitations such as the large tunneling current in very thin gate dielectrics. It is shown that alternative device structures can allow CMOS transistors to scale by another 20 times. That is as large a factor of scaling as what the semiconductor industry accomplished in the past 25 years. There will be many opportunities and challenges in finding novel device structures and new processing techniques, and in understanding the physics of future devices.

  1. CMOS circuit design, layout and simulation

    CERN Document Server

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  2. Modeling of Amperometric Immunosensor for CMOS Integration

    Institute of Scientific and Technical Information of China (English)

    Ce Li; Haigang Yang; Shanhong Xia; Chao Bian

    2006-01-01

    A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation. A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model. The mean square error norm of the simulated curve against the measured one is 8.65 × 10-17. The whole circuit has been fabricated in a 0.35am CMOS process.

  3. Hybridization thermodynamics of NimbleGen Microarrays

    Directory of Open Access Journals (Sweden)

    Posekany Alexandra

    2010-01-01

    Full Text Available Abstract Background While microarrays are the predominant method for gene expression profiling, probe signal variation is still an area of active research. Probe signal is sequence dependent and affected by probe-target binding strength and the competing formation of probe-probe dimers and secondary structures in probes and targets. Results We demonstrate the benefits of an improved model for microarray hybridization and assess the relative contributions of the probe-target binding strength and the different competing structures. Remarkably, specific and unspecific hybridization were apparently driven by different energetic contributions: For unspecific hybridization, the melting temperature Tm was the best predictor of signal variation. For specific hybridization, however, the effective interaction energy that fully considered competing structures was twice as powerful a predictor of probe signal variation. We show that this was largely due to the effects of secondary structures in the probe and target molecules. The predictive power of the strength of these intramolecular structures was already comparable to that of the melting temperature or the free energy of the probe-target duplex. Conclusions This analysis illustrates the importance of considering both the effects of probe-target binding strength and the different competing structures. For specific hybridization, the secondary structures of probe and target molecules turn out to be at least as important as the probe-target binding strength for an understanding of the observed microarray signal intensities. Besides their relevance for the design of new arrays, our results demonstrate the value of improving thermodynamic models for the read-out and interpretation of microarray signals.

  4. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    CERN Document Server

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  5. Simple BiCMOS CCCTA design and resistorless analog function realization.

    Science.gov (United States)

    Tangsrirat, Worapong

    2014-01-01

    The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (R x) and current transfer (i o/i z), are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

  6. Wide dynamic range CMOS image sensor with in-pixel double-exposure and synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Li Binqiao; Sun Zhongyan; Xu Jiangtao, E-mail: xujiangtao@tju.edu.c [School of Electronics and Information Engineering, Tianjin University, Tianjin 300072 (China)

    2010-05-15

    A wide-dynamic-range CMOS image sensor (CIS) based on synthesis of a long-time and a short-time exposure signal in the floating diffusion (FD) of a five-transistor active pixel is proposed. With optimized pixel operation, the response curve is compressed and a wide dynamic range image is obtained. A prototype wide-dynamic-range CMOS image sensor was developed with a 0.18 {mu}m CIS process. With the double exposure time 2.4 ms and 70 ns, the dynamic range of the proposed sensor is 80 dB with 30 frames per second (fps). The proposed CMOS image sensor meets the demands of applications in security surveillance systems. (semiconductor integrated circuits)

  7. Simple BiCMOS CCCTA Design and Resistorless Analog Function Realization

    Directory of Open Access Journals (Sweden)

    Worapong Tangsrirat

    2014-01-01

    Full Text Available The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (Rx and current transfer (io/iz, are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

  8. OperationalAmplifier Analysis when Migrating from 0.18 µm to 65 µm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Karolis Kiela

    2013-05-01

    Full Text Available The article offers the analysis of operational amplifier parameter changes, when circuits are scaled from 0.18 μm to 65 nm CMOS technology. Two two-stage operational amplifiers were designed for this purpose: first uses n-MOS input differential pair; second uses cascaded active loads structure and p-MOS type input differential pair. The operational amplifiers were designed in 0.18 μm CMOS technology and scaled to 65 nm CMOS. Other scaling methods were also analysed when redesigning circuits from one IC technology to another. Results of the original and scaled operational amplifier parameters are presented and analysed.Article in Lithuanian

  9. Fluorescence lifetime biosensing with DNA microarrays and a CMOS-SPAD imager

    NARCIS (Netherlands)

    Giraud, G.; Schulze, H.; Li, D.U.; Bachmann, T.T.; Crain, J.; Tyndall, D.; Richardson, J.; Walker, R.; Stoppa, D.; Charbon, E.; Henderson, R.; Arlt, J.

    2010-01-01

    Fluorescence lifetime of dye molecules is a sensitive reporter on local microenvironment which is generally independent of fluorophores concentration and can be used as a means of discrimination between molecules with spectrally overlapping emission. It is therefore a potentially powerful multiplexe

  10. Confirmation of the molecular classification of diffuse large B-cell lymphoma by immunohistochemistry using a tissue microarray

    National Research Council Canada - National Science Library

    Hans, Christine P; Weisenburger, Dennis D; Greiner, Timothy C; Gascoyne, Randy D; Delabie, Jan; Ott, German; Müller-Hermelink, H Konrad; Campo, Elias; Braziel, Rita M; Jaffe, Elaine S; Pan, Zenggang; Farinha, Pedro; Smith, Lynette M; Falini, Brunangelo; Banham, Alison H; Rosenwald, Andreas; Staudt, Louis M; Connors, Joseph M; Armitage, James O; Chan, Wing C

    2004-01-01

    ...), activated B-cell-like (ABC), and type 3 gene expression profiles using a cDNA microarray. Tissue microarray (TMA) blocks were created from 152 cases of DLBCL, 142 of which had been successfully evaluated by cDNA microarray...

  11. Evaluation of a scientific CMOS camera for astronomical observations

    Institute of Scientific and Technical Information of China (English)

    Peng Qiu; Yong-Na Mao; Xiao-Meng Lu; E Xiang; Xiao-Jun Jiang

    2013-01-01

    We evaluate the performance of the first generation scientific CMOS (sCMOS) camera used for astronomical observations.The sCMOS camera was attached to a 25 cm telescope at Xinglong Observatory,in order to estimate its photometric capabilities.We further compared the capabilities of the sCMOS camera with that of full-frame and electron multiplying CCD cameras in laboratory tests and observations.The results indicate the sCMOS camera is capable of performing photometry of bright sources,especially when high spatial resolution or temporal resolution is desired.

  12. Microarray Technologies in Fungal Diagnostics.

    Science.gov (United States)

    Rupp, Steffen

    2017-01-01

    Microarray technologies have been a major research tool in the last decades. In addition they have been introduced into several fields of diagnostics including diagnostics of infectious diseases. Microarrays are highly parallelized assay systems that initially were developed for multiparametric nucleic acid detection. From there on they rapidly developed towards a tool for the detection of all kind of biological compounds (DNA, RNA, proteins, cells, nucleic acids, carbohydrates, etc.) or their modifications (methylation, phosphorylation, etc.). The combination of closed-tube systems and lab on chip devices with microarrays further enabled a higher automation degree with a reduced contamination risk. Microarray-based diagnostic applications currently complement and may in the future replace classical methods in clinical microbiology like blood cultures, resistance determination, microscopic and metabolic analyses as well as biochemical or immunohistochemical assays. In addition, novel diagnostic markers appear, like noncoding RNAs and miRNAs providing additional room for novel nucleic acid based biomarkers. Here I focus an microarray technologies in diagnostics and as research tools, based on nucleic acid-based arrays.

  13. Design of Low Power CMOS Circuits using Leakage Control Transistor and Multi-Threshold CMOS Techniques

    OpenAIRE

    2012-01-01

    The scaling down of technology in CMOS circuits, results in the down scaling of threshold voltage thereby increasing the sub-threshold leakage current. An IC consists of many circuits of which some circuits consists critical path like full adder, whereas some circuits like multiplexer and decoder has no specified critical path. LECTOR is a technique for designing leakage power reduced CMOS circuits without affecting the dynamic power dissipation, which can be used for circuits with no specifi...

  14. Time-course microarrays reveal early activation of the immune transcriptome in a choline-deficient mouse model of liver injury.

    Science.gov (United States)

    Mitsumoto, Koji; Watanabe, Rina; Nakao, Katsuki; Yonenaka, Hisaki; Hashimoto, Takao; Kato, Norihisa; Kumrungsee, Thanutchaporn; Yanaka, Noriyuki

    2017-09-01

    Choline-deficient diet is extensively used as a model of nonalcoholic fatty liver disease (NAFLD). In this study, we explored genes in the liver for which the expression changed in response to the choline-deficient (CD) diet. Male CD-1 mice were divided into two groups and fed a CD diet with or without 0.2% choline bitartrate for one or three weeks. Hepatic levels of choline metabolites were analyzed by using liquid chromatography mass spectrometry and hepatic gene expression profiles were examined by DNA microarray analysis. The CD diet lowered liver choline metabolites after one week and exacerbated fatty liver between one and three weeks. We identified >300 genes whose expression was significantly altered in the livers of mice after consumption of this CD diet for one week and showed that liver gene expression profiles could be classified into six distinct groups. This study showed that STAT1 and interferon-regulated genes was up-regulated after the CD diet consumption and that the Stat1 mRNA level was negatively correlated with liver phosphatidylcholine level. Stat1 mRNA expression was actually up-regulated in isolated hepatocytes from the mouse liver with the CD diet. This study provides insight into the genomic effects of the CD diet through the Stat1 expression, which might be involved in NAFLD development. Copyright © 2017 Elsevier Inc. All rights reserved.

  15. A 24GHz Radar Receiver in CMOS

    NARCIS (Netherlands)

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  16. Low power SEU immune CMOS memory circuits

    Science.gov (United States)

    Liu, M. N.; Whitaker, Sterling

    1992-01-01

    The authors report a design improvement for CMOS static memory circuits hardened against single event upset (SEU) using a recently proposed logic/circuit design technique. This improvement drastically reduces static power consumption, reduces the number of transistors required in a D flip-flop design, and eliminates the possibility of capturing an upset state in the slave section during a clock transition.

  17. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern mul

  18. Ultra-low Voltage CMOS Cascode Amplifier

    DEFF Research Database (Denmark)

    Lehmann, Torsten; Cassia, Marco

    2000-01-01

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique...

  19. Fully CMOS-compatible titanium nitride nanoantennas

    Energy Technology Data Exchange (ETDEWEB)

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  20. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  1. Fully CMOS-compatible titanium nitride nanoantennas

    Science.gov (United States)

    Briggs, Justin A.; Naik, Gururaj V.; Petach, Trevor A.; Baum, Brian K.; Goldhaber-Gordon, David; Dionne, Jennifer A.

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  2. A 24GHz Radar Receiver in CMOS

    NARCIS (Netherlands)

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  3. Design and realization of CMOS image sensor

    Science.gov (United States)

    Xu, Jian; Xiao, Zexin

    2008-02-01

    A project was presented that instrumental design of an economical CMOS microscope image sensor. A high performance, low price, black-white camera chip OV5116P was used as the core of the sensor circuit; Designing and realizing peripheral control circuit of sensor; Through the control on dial switch to realize different functions of the sensor chip in the system. For example: auto brightness level descending function on or off; gamma correction function on or off; auto and manual backlight compensation mode conversion and so on. The optical interface of sensor is designed for commercialization and standardization. The images of sample were respectively gathered with CCD and CMOS. Result of the experiment indicates that both performances were identical in several aspects as follows: image definition, contrast control, heating degree and the function can be adjusted according to the demand of user etc. The imperfection was that the CMOS with smaller field and higher noise than CCD; nevertheless, the maximal advantage of choosing the CMOS chip is its low cost. And its imaging quality conformed to requirement of the economical microscope image sensor.

  4. Analog IC reliability in nanometer CMOS

    CERN Document Server

    Maricau, Elie

    2013-01-01

    This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed.   The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.   ·         Enables readers to understand long-term reliability of an integrated circuit; ·         Reviews CMOS unreliability effects, with focus on those that will emerge in future CMOS nodes; ·         Provides overview of models for...

  5. Plasmonic Modulator Using CMOS Compatible Material Platform

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.;

    2014-01-01

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation...

  6. CMOS VHF transconductance-C lowpass filter

    NARCIS (Netherlands)

    Nauta, B.

    1990-01-01

    Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

  7. Linear CMOS transconductance element for VHF filters

    NARCIS (Netherlands)

    Nauta, B.; Seevinck, E.

    1989-01-01

    A differential transconductance element based on CMOS inverters is presented. With this circuit a linear, tunable integrator for very high-frequency continuous-time integrated filters can be made. This integrator has good linearity properties (THD<0.04%, Vipp=1.8 V), nondominant poles in the gigaher

  8. Method and circuitry for CMOS transconductor linearization

    NARCIS (Netherlands)

    Kundur Subramaniyan, Harish; Klumperink, Eric; Srinivasan, Venkatesh; Kiaei, Ali; Nauta, Bram

    2016-01-01

    Third order distortion is reduced in a CMOS transconductor circuit that includes a first N-channel transistor and a first P-channel transistor, gates of the first N-channel transistor and the first P-channel transistor being coupled to receive an input signal. Drains of the first N-channel transisto

  9. Glass slides to DNA microarrays

    Directory of Open Access Journals (Sweden)

    Samuel D Conzone

    2004-03-01

    Full Text Available A tremendous interest in deoxyribonucleic acid (DNA characterization tools was spurred by the mapping and sequencing of the human genome. New tools were needed, beginning in the early 1990s, to cope with the unprecedented amount of genomic information that was being discovered. Such needs led to the development of DNA microarrays; tiny gene-based sensors traditionally prepared on coated glass microscope slides. The following review is intended to provide historical insight into the advent of the DNA microarray, followed by a description of the technology from both the application and fabrication points of view. Finally, the unmet challenges and needs associated with DNA microarrays will be described to define areas of potential future developments for the materials researcher.

  10. SOI CMOS Imager with Suppression of Cross-Talk

    Science.gov (United States)

    Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

    2009-01-01

    A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

  11. Phenotypic MicroRNA Microarrays

    OpenAIRE

    2013-01-01

    Microarray technology has become a very popular approach in cases where multiple experiments need to be conducted repeatedly or done with a variety of samples. In our lab, we are applying our high density spots microarray approach to microscopy visualization of the effects of transiently introduced siRNA or cDNA on cellular morphology or phenotype. In this publication, we are discussing the possibility of using this micro-scale high throughput process to study the role of microRNAs in the bio...

  12. CMOS MEMS capacitive absolute pressure sensor

    Science.gov (United States)

    Narducci, M.; Yu-Chia, L.; Fang, W.; Tsai, J.

    2013-05-01

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal-oxide-semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa-1 in the pressure range of 0-300 kPa.

  13. CMOS-compatible spintronic devices: a review

    Science.gov (United States)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  14. Microarray Analysis Reveals Increased Transcriptional Repression and Reduced Metabolic Activity but Not Major Changes in the Core Apoptotic Machinery during Maturation of Sympathetic Neurons.

    Science.gov (United States)

    Raba, Mikk; Palgi, Jaan; Lehtivaara, Maria; Arumäe, Urmas

    2016-01-01

    Postnatal maturation of the neurons whose main phenotype and basic synaptic contacts are already established includes neuronal growth, refinement of synaptic contacts, final steps of differentiation, programmed cell death period (PCD) etc. In the sympathetic neurons, postnatal maturation includes permanent end of the PCD that occurs with the same time schedule in vivo and in vitro suggesting that the process could be genetically determined. Also many other changes in the neuronal maturation could be permanent and thus based on stable changes in the genome expression. However, postnatal maturation of the neurons is poorly studied. Here we compared the gene expression profiles of immature and mature sympathetic neurons using Affymetrix microarray assay. We found 1310 significantly up-regulated and 1151 significantly down-regulated genes in the mature neurons. Gene ontology analysis reveals up-regulation of genes related to neuronal differentiation, chromatin and epigenetic changes, extracellular factors and their receptors, and cell adhesion, whereas many down-regulated genes were related to metabolic and biosynthetic processes. We show that termination of PCD is not related to major changes in the expression of classical genes for apoptosis or cell survival. Our dataset is deposited to the ArrayExpress database and is a valuable source to select candidate genes in the studies of neuronal maturation. As an example, we studied the changes in the expression of selected genes Igf2bp3, Coro1A, Zfp57, Dcx, and Apaf1 in the young and mature sympathetic ganglia by quantitative PCR and show that these were strongly downregulated in the mature ganglia.

  15. Microarray analysis reveals increased transcriptional repression and reduced metabolic activity but not major changes in the core apoptotic machinery during maturation of sympathetic neurons

    Directory of Open Access Journals (Sweden)

    Mikk eRaba

    2016-03-01

    Full Text Available Postnatal maturation of the neurons whose main phenotype and basic synaptic contacts are already established includes neuronal growth, refinement of synaptic contacts, final steps of differentiation, programmed cell death period (PCD etc. In the sympathetic neurons, postnatal maturation includes permanent end of the PCD that occurs with the same time schedule in vivo and in vitro suggesting that the process could be genetically determined. Also many other changes in the neuronal maturation could be permanent and thus based on stable changes in the genome expression. However, postnatal maturation of the neurons is poorly studied. Here we compared the gene expression profiles of immature and mature sympathetic neurons using Affymetrix microarray assay. We found 1310 significantly up-regulated and 1151 significantly down-regulated genes in the mature neurons. Gene ontology analysis reveals up-regulation of genes related to neuronal differentiation, chromatin and epigenetic changes, extracellular factors and their receptors, and cell adhesion, whereas many down-regulated genes were related to metabolic and biosynthetic processes. We show that termination of PCD is not related to major changes in the expression of classical genes for apoptosis or cell survival. Our dataset is deposited to the ArrayExpress database and is a valuable source to select candidate genes in the studies of neuronal maturation. As an example, we studied the changes in the expression of selected genes Igf2bp3, Coro1A, Zfp57, Dcx, and Apaf1 in the young and mature sympathetic ganglia by quantitative PCR and show that these were strongly downregulated in the mature ganglia.

  16. Combining microarrays and genetic analysis

    NARCIS (Netherlands)

    Alberts, Rudi; Fu, Jingyuan; Swertz, Morris A.; Lubbers, L. Alrik; Albers, Casper J.; Jansen, Ritsert C.

    2005-01-01

    Gene expression can be studied at a genome-wide scale with the aid of modern microarray technologies. Expression profiling of tens to hundreds of individuals in a genetic population can reveal the consequences of genetic variation. In this paper it is argued that the design and analysis of such a

  17. Combining microarrays and genetic analysis

    NARCIS (Netherlands)

    Alberts, Rudi; Fu, Jingyuan; Swertz, Morris A.; Lubbers, L. Alrik; Albers, Casper J.; Jansen, Ritsert C.

    2005-01-01

    Gene expression can be studied at a genome-wide scale with the aid of modern microarray technologies. Expression profiling of tens to hundreds of individuals in a genetic population can reveal the consequences of genetic variation. In this paper it is argued that the design and analysis of such a st

  18. Graphene/Si CMOS hybrid hall integrated circuits.

    Science.gov (United States)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-07

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  19. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    Science.gov (United States)

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  20. Picky: oligo microarray design for large genomes

    National Research Council Canada - National Science Library

    Chou, Hui-Hsien; Hsia, An-Ping; Mooney, Denise L; Schnable, Patrick S

    2004-01-01

    Many large genomes are getting sequenced nowadays. Biologists are eager to start microarray analysis taking advantage of all known genes of a species, but existing microarray design tools were very inefficient for large genomes...

  1. Review of radiation damage studies on DNW CMOS MAPS

    Science.gov (United States)

    Traversi, G.; Gaioni, L.; Manazza, A.; Manghisoni, M.; Ratti, L.; Re, V.; Zucca, S.; Bettarini, S.; Rizzo, G.; Morsani, F.; Bosisio, L.; Rashevskaya, I.; Cindro, V.

    2013-12-01

    Monolithic active pixel sensors fabricated in a bulk CMOS technology with no epitaxial layer and standard resistivity (10 Ω cm) substrate, featuring a deep N-well as the collecting electrode (DNW MAPS), have been exposed to γ-rays, up to a final dose of 10 Mrad (SiO2), and to neutrons from a nuclear reactor, up to a total 1 MeV neutron equivalent fluence of about 3.7 ·1013cm-2. The irradiation campaign was aimed at studying the effects of radiation on the most significant parameters of the front-end electronics and on the charge collection properties of the sensors. Device characterization has been carried out before and after irradiations. The DNW MAPS irradiated with 60Co γ-rays were also subjected to high temperature annealing (100 °C for 168 h). Measurements have been performed through a number of different techniques, including electrical characterization of the front-end electronics and of DNW diodes, laser stimulation of the sensors and tests with 55Fe and 90Sr radioactive sources. This paper reviews the measurement results, their relation with the damage mechanisms underlying performance degradation and provides a new comparison between DNW devices and MAPS fabricated in a CMOS process with high resistivity (1 kΩ cm) epitaxial layer.

  2. Direct calibration of PICKY-designed microarrays

    Directory of Open Access Journals (Sweden)

    Ronald Pamela C

    2009-10-01

    Full Text Available Abstract Background Few microarrays have been quantitatively calibrated to identify optimal hybridization conditions because it is difficult to precisely determine the hybridization characteristics of a microarray using biologically variable cDNA samples. Results Using synthesized samples with known concentrations of specific oligonucleotides, a series of microarray experiments was conducted to evaluate microarrays designed by PICKY, an oligo microarray design software tool, and to test a direct microarray calibration method based on the PICKY-predicted, thermodynamically closest nontarget information. The complete set of microarray experiment results is archived in the GEO database with series accession number GSE14717. Additional data files and Perl programs described in this paper can be obtained from the website http://www.complex.iastate.edu under the PICKY Download area. Conclusion PICKY-designed microarray probes are highly reliable over a wide range of hybridization temperatures and sample concentrations. The microarray calibration method reported here allows researchers to experimentally optimize their hybridization conditions. Because this method is straightforward, uses existing microarrays and relatively inexpensive synthesized samples, it can be used by any lab that uses microarrays designed by PICKY. In addition, other microarrays can be reanalyzed by PICKY to obtain the thermodynamically closest nontarget information for calibration.

  3. Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

    Science.gov (United States)

    Liu, Yu-Chia; Tsai, Ming-Han; Tang, Tsung-Lin; Fang, Weileun

    2011-10-01

    This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

  4. CMOS compatible nanoscale nonvolatile resistance switching memory.

    Science.gov (United States)

    Jo, Sung Hyun; Lu, Wei

    2008-02-01

    We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (10(3)), long endurance (10(6)), retention time (5 months), and multibit capability. These key performance metrics compare favorably with other emerging nonvolatile memory techniques. Furthermore, both diode-like (rectifying) and resistor-like (nonrectifying) behaviors can be obtained in the device switching characteristics in a controlled fashion. These results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.

  5. Spatio-temporal simulation in subthreshold CMOS

    Science.gov (United States)

    Neeley, John; Harris, John G.

    1997-05-01

    This paper reports on the design and chip measurements from a CMOS chaotic oscillator operating by itself and connected in a ring of four similar oscillators. The oscillator is autonomous and generates signals with three state variables analogous to Chua's circuit. For commensurate bandwidth, this design utilizes currents and capacitors over 200 times smaller than above threshold CMOS realizations. Also, all circuit elements are on chip. The resulting voltage-controlled bifurcation parameters simplify exploration of the circuit's dynamics, alleviating the need to interchange physical components. This combination of reduced size and variable parameters make the design suitable for single-chip VLSI synthesis of higher dimensional chaotic circuits, including coupled maps generating spatio-temporal chaos and systems exploiting chaos synchronization.

  6. Ultralow-Loss CMOS Copper Plasmonic Waveguides.

    Science.gov (United States)

    Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

    2016-01-13

    Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips.

  7. Noise in a CMOS digital pixel sensor

    Institute of Scientific and Technical Information of China (English)

    Zhang Chi; Yao Suying; Xu Jiangtao

    2011-01-01

    Based on the study of noise performance in CMOS digital pixel sensor (DPS),a mathematical model of noise is established with the pulse-width-modulation (PWM) principle.Compared with traditional CMOS image sensors,the integration time is different and A/D conversion is implemented in each PWM DPS pixel.Then,the quantitative calculating formula of system noise is derived.It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region.In this model,photodiode shot noise does not vary with luminance,but dark current shot noise does.According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator,the total noise can be reduced.These results serve as a guideline for the design of PWM DPS.

  8. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

  9. Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

    CERN Document Server

    El-Khatib, Ziad; Mahmoud, Samy A

    2012-01-01

    This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

  10. Cantilever-Based Biosensors in CMOS Technology

    CERN Document Server

    Kirstein, K -U; Zimmermann, M; Vancura, C; Volden, T; Song, W H; Lichtenberg, J; Hierlemannn, A

    2011-01-01

    Single-chip CMOS-based biosensors that feature microcantilevers as transducer elements are presented. The cantilevers are functionalized for the capturing of specific analytes, e.g., proteins or DNA. The binding of the analyte changes the mechanical properties of the cantilevers such as surface stress and resonant frequency, which can be detected by an integrated Wheatstone bridge. The monolithic integrated readout allows for a high signal-to-noise ratio, lowers the sensitivity to external interference and enables autonomous device operation.

  11. CMOS current amplifiers : speed versus nonlinearity

    OpenAIRE

    2000-01-01

    This work deals with analogue integrated circuit design using various types of current-mode amplifiers. These circuits are analysed and realised using modern CMOS integration technologies. The dynamic nonlinearities of these circuits are discussed in detail as in the literature only linear nonidealities and static nonlinearities are conventionally considered. For the most important open-loop current-mode amplifier, the second-generation current-conveyor (CCII), a macromodel is derived tha...

  12. CMOS Design of Ternary Arithmetic Devices

    Institute of Scientific and Technical Information of China (English)

    吴训威; F.Prosser

    1991-01-01

    This paper presents CMOS circuit designs of a ternary adder and a ternary multiplier,formulated using transmission function theory.Binary carry signals appearing in these designs allow conventional look-ahead carry techniques to be used.compared with previous similar designs,the circuits proposed in this paper have advantages such as low dissipation,low output impedance,and simplicity of construction.

  13. CMOS-array design-automation techniques

    Science.gov (United States)

    Feller, A.; Lombardt, T.

    1979-01-01

    Thirty four page report discusses design of 4,096-bit complementary metal oxide semiconductor (CMOS) read-only memory (ROM). CMOSROM is either mask or laser programable. Report is divided into six sections; section one describes background of ROM chips; section two presents design goals for chip; section three discusses chip implementation and chip statistics; conclusions and recommendations are given in sections four thru six.

  14. CMOS Camera Array With Onboard Memory

    Science.gov (United States)

    Gat, Nahum

    2009-01-01

    A compact CMOS (complementary metal oxide semiconductor) camera system has been developed with high resolution (1.3 Megapixels), a USB (universal serial bus) 2.0 interface, and an onboard memory. Exposure times, and other operating parameters, are sent from a control PC via the USB port. Data from the camera can be received via the USB port and the interface allows for simple control and data capture through a laptop computer.

  15. Advanced CMOS Radiation Effects Testing and Analysis

    Science.gov (United States)

    Pellish, J. A.; Marshall, P. W.; Rodbell, K. P.; Gordon, M. S.; LaBel, K. A.; Schwank, J. R.; Dodds, N. A.; Castaneda, C. M.; Berg, M. D.; Kim, H. S.; Phan, A. M.; Seidleck, C. M.

    2014-01-01

    Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.

  16. CMOS imagers from phototransduction to image processing

    CERN Document Server

    Etienne-Cummings, Ralph

    2004-01-01

    The idea of writing a book on CMOS imaging has been brewing for several years. It was placed on a fast track after we agreed to organize a tutorial on CMOS sensors for the 2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004). This tutorial defined the structure of the book, but as first time authors/editors, we had a lot to learn about the logistics of putting together information from multiple sources. Needless to say, it was a long road between the tutorial and the book, and it took more than a few months to complete. We hope that you will find our journey worthwhile and the collated information useful. The laboratories of the authors are located at many universities distributed around the world. Their unifying theme, however, is the advancement of knowledge for the development of systems for CMOS imaging and image processing. We hope that this book will highlight the ideas that have been pioneered by the authors, while providing a roadmap for new practitioners in this field to exploit exc...

  17. Efficient design of CMOS TSC checkers

    Science.gov (United States)

    Biddappa, Anita; Shamanna, Manjunath K.; Maki, Gary; Whitaker, Sterling

    1990-01-01

    This paper considers the design of an efficient, robustly testable, CMOS Totally Self-Checking (TSC) Checker for k-out-of-2k codes. Most existing implementations use primitive gates and assume the single stuck-at fault model. The self-testing property has been found to fail for CMOS TSC checkers under the stuck-open fault model due to timing skews and arbitrary delays in the circuit. A new four level design using CMOS primitive gates (NAND, NOR, INVERTERS) is presented. This design retains its properties under the stuck-open fault model. Additionally, this method offers an impressive reduction (greater than 70 percent) in gate count, gate inputs, and test set size when compared to the existing method. This implementation is easily realizable and is based on Anderson's technique. A thorough comparative study has been made on the proposed implementation and Kundu's implementation and the results indicate that the proposed one is better than Kundu's in all respects for k-out-of-2k codes.

  18. A logarithmic low dark current CMOS pixel

    Science.gov (United States)

    Brunetti, Alessandro Michel; Choubey, Bhaskar

    2016-04-01

    High dynamic range pixels are required in a number of automotive and scientific applications. CMOS pixels provide different approaches to achieve this. However, these suffer from poor performance under low light conditions due to inherently high leakage current that is present in CMOS processes, also known as dark current. The typical approach to reduce this dark current involves process modifications. Nevertheless, energy considerations suggest that the leakage current will be close to zero at a close to zero voltage on the photodiode. Hence, the reduction in dark current can be achieved by forcing a zero voltage across the photodiode. In this paper, a novel logarithmic CMOS pixel design capable of reducing dark current without any process modifications is proposed. This pixel is also able to produce a wide dynamic range response. This circuit utilizes two current mirrors to force the in-pixel photodiode at a close to zero voltage. Additionally, a bias voltage is used to reduce a higher order effect known as Drain Induced Barrier Lowering (DIBL). In fact, the contribution of this effect can be compensated by increasing the body effect. In this paper, we studied the consequences of a negative bias voltage applied to the body of the current mirror pair to compensate for the DIBL effect thereby achieving a very small voltage drop on the photodiode and consequently, a higher sensitivity in low light conditions.

  19. One-chip electronic detection of DNA hybridization using precision impedance-based CMOS array sensor.

    Science.gov (United States)

    Lee, Kang-Ho; Lee, Jeong-Oen; Sohn, Mi-Jin; Lee, Byunghun; Choi, Suk-Hwan; Kim, Sang Kyu; Yoon, Jun-Bo; Cho, Gyu-Hyeong

    2010-12-15

    This paper describes a label-free and fully electronic detection method of DNA hybridization, which is achieved through the use of a 16×8 microarray sensor in conjunction with a new type of impedance spectroscopy constructed with standard complementary metal-oxide-semiconductor (CMOS) technology. The impedance-based method is based on changes in the reactive capacitance and the charge-transfer resistance after hybridization with complementary DNA targets. In previously published label-free techniques, the measured capacitance presented unstable capacitive properties due to the parallel resistance that is not infinite and can cause a leakage by discharging the charge on the capacitor. This paper presents an impedance extraction method that uses excitation by triangular wave voltage, which enables a reliable measurement of both C and R producing a highly sensitive sensor with a stable operation independent of external variables. The system was fabricated in an industrial 0.35-μm 4-metal 2-poly CMOS process, integrating working electrodes and readout electronics into one chip. The integrated readout, which uses a parasitic insensitive integrator, achieves an enlarged detection range and improved noise performance. The maximum average relative variations of C and R are 31.5% and 68.6%, respectively, after hybridization with a 1 μM target DNA. The proposed sensor allows quantitative evaluation of the molecule densities on the chip with distinguishable variation in the impedance. This fully electronic microsystem has great potential for use with bioanalytical tools and point-of-care diagnosis.

  20. Biclustering of time series microarray data.

    Science.gov (United States)

    Meng, Jia; Huang, Yufei

    2012-01-01

    Clustering is a popular data exploration technique widely used in microarray data analysis. In this chapter, we review ideas and algorithms of bicluster and its applications in time series microarray analysis. We introduce first the concept and importance of biclustering and its different variations. We then focus our discussion on the popular iterative signature algorithm (ISA) for searching biclusters in microarray dataset. Next, we discuss in detail the enrichment constraint time-dependent ISA (ECTDISA) for identifying biologically meaningful temporal transcription modules from time series microarray dataset. In the end, we provide an example of ECTDISA application to time series microarray data of Kaposi's Sarcoma-associated Herpesvirus (KSHV) infection.

  1. Small-area and compact CMOS emulator circuit for CMOS/nanoscale memristor co-design.

    Science.gov (United States)

    Shin, Sanghak; Choi, Jun-Myung; Cho, Seongik; Min, Kyeong-Sik

    2013-11-01

    In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a resistor array, other complicated circuit blocks, etc., the proposed emulator circuit can describe the nanoscale memristor's current-voltage relationship using a simple voltage-controlled resistor, where its resistance can be programmed by the stored voltage at the state variable capacitor. Comparing the layout area between the previous emulator circuit and the proposed one, the layout area of the proposed emulator circuit is estimated to be 32 times smaller than the previous emulator circuit. The proposed CMOS emulator circuit of nanoscale memristor memory will be very useful in developing hybrid circuits of CMOS/nanoscale memristor memory.

  2. Accelerated life testing effects on CMOS microcircuit characteristics

    Science.gov (United States)

    1980-01-01

    The 250 C, 200C and 125C accelerated tests are described. The wear-out distributions from the 250 and 200 C tests were used to estimate the activation energy between the two test temperatures. The duration of the 125 C test was not sufficient to bring the test devices into the wear-out region. It was estimated that, for the most complex of the three devices types, the activation energy between 200 C and 125 C should be at least as high as that between 250 C and 200 C. The practicality of the use of high temperature for the accelerated life tests from the point of view of durability of equipment is assessed. Guidlines for the development of accelerated life-test conditions are proposed. The use of the silicon nitride overcoat to improve the high temperature accelerated life-test characteristics of CMOS microcircuits is described.

  3. Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

    CERN Document Server

    Wang, T.

    2017-01-01

    The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

  4. The Current Status of DNA Microarrays

    Science.gov (United States)

    Shi, Leming; Perkins, Roger G.; Tong, Weida

    DNA microarray technology that allows simultaneous assay of thousands of genes in a single experiment has steadily advanced to become a mainstream method used in research, and has reached a stage that envisions its use in medical applications and personalized medicine. Many different strategies have been developed for manufacturing DNA microarrays. In this chapter, we discuss the manufacturing characteristics of seven microarray platforms that were used in a recently completed large study by the MicroArray Quality Control (MAQC) consortium, which evaluated the concordance of results across these platforms. The platforms can be grouped into three categories: (1) in situ synthesis of oligonucleotide probes on microarrays (Affymetrix GeneChip® arrays based on photolithography synthesis and Agilent's arrays based on inkjet synthesis); (2) spotting of presynthesized oligonucleotide probes on microarrays (GE Healthcare's CodeLink system, Applied Biosystems' Genome Survey Microarrays, and the custom microarrays printed with Operon's oligonucleotide set); and (3) deposition of presynthesized oligonucleotide probes on bead-based microarrays (Illumina's BeadChip microarrays). We conclude this chapter with our views on the challenges and opportunities toward acceptance of DNA microarray data in clinical and regulatory settings.

  5. The application of phenotypic microarray analysis to anti-fungal drug development.

    Science.gov (United States)

    Greetham, Darren; Lappin, David F; Rajendran, Ranjith; O'Donnell, Lindsay; Sherry, Leighann; Ramage, Gordon; Nile, Christopher

    2017-03-01

    Candida albicans metabolic activity in the presence and absence of acetylcholine was measured using phenotypic microarray analysis. Acetylcholine inhibited C. albicans biofilm formation by slowing metabolism independent of biofilm forming capabilities. Phenotypic microarray analysis can therefore be used for screening compound libraries for novel anti-fungal drugs and measuring antifungal resistance.

  6. High-speed binary CMOS image sensor using a high-responsivity MOSFET-type photodetector

    Science.gov (United States)

    Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Choi, Pyung; Shin, Jang-Kyoo

    2015-03-01

    In this paper, a complementary metal oxide semiconductor (CMOS) binary image sensor based on a gate/body-tied (GBT) MOSFET-type photodetector is proposed. The proposed CMOS binary image sensor was simulated and measured using a standard CMOS 0.18-μm process. The GBT MOSFET-type photodetector is composed of a floating gate (n+- polysilicon) tied to the body (n-well) of the p-type MOSFET. The size of the active pixel sensor (APS) using GBT photodetector is smaller than that of APS using the photodiode. This means that the resolution of the image can be increased. The high-gain GBT photodetector has a higher photosensitivity compared to the p-n junction photodiode that is used in a conventional APS. Because GBT has a high sensitivity, fast operation of the binary processing is possible. A CMOS image sensor with the binary processing can be designed with simple circuits composed of a comparator and a Dflip- flop while a complex analog to digital converter (ADC) is not required. In addition, the binary image sensor has low power consumption and high speed operation with the ability to switch back and forth between a binary mode and an analog mode.

  7. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 μm technology

    Science.gov (United States)

    Pellion, D.; Jradi, K.; Brochard, N.; Prêle, D.; Ginhac, D.

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 μm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm2) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters1

  8. X-ray characterization of CMOS imaging detector with high resolution for fluoroscopic imaging application

    Science.gov (United States)

    Cha, Bo Kyung; Kim, Cho Rong; Jeon, Seongchae; Kim, Ryun Kyung; Seo, Chang-Woo; Yang, Keedong; Heo, Duchang; Lee, Tae-Bum; Shin, Min-Seok; Kim, Jong-Boo; Kwon, Oh-Kyung

    2013-12-01

    This paper introduces complementary metal-oxide semiconductor (CMOS) active pixel sensor (APS)-based X-ray imaging detectors with high spatial resolution for medical imaging application. In this study, our proposed X-ray CMOS imaging sensor has been fabricated by using a 0.35 μm 1 Poly 4 Metal CMOS process. The pixel size is 100 μm×100 μm and the pixel array format is 24×96 pixels, which provide a field-of-view (FOV) of 9.6 mm×2.4 mm. The 14.3-bit extend counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. Both thallium-doped CsI (CsI:Tl) and Gd2O2S:Tb scintillator screens were used as converters for incident X-rays to visible light photons. The optical property and X-ray imaging characterization such as X-ray to light response as a function of incident X-ray exposure dose, spatial resolution and X-ray images of objects were measured under different X-ray energy conditions. The measured results suggest that our developed CMOS-based X-ray imaging detector has the potential for fluoroscopic imaging and cone-beam computed tomography (CBCT) imaging applications.

  9. Biological networks to the analysis of microarray data

    Institute of Scientific and Technical Information of China (English)

    FANG Zhuo; LUO Qingming; ZHANG Guoqing; LI Yixue

    2006-01-01

    Microarray technology, which permits rapid and large-scale screening for patterns of gene expressions, usually generates a large amount of data. How to mine the biological meanings under these data is one of the main challenges in bioinformatics. Compared to the pure mathematical techniques, those methods incorporated with some prior biological knowledge generally bring better interpretations.Recently, a new analysis, in which the knowledge of biological networks such as metabolic network and protein interaction network is introduced, is widely applied to microarray data analysis. The microarray data analysis based on biological networks contains two main research aspects: identification of active components in biological networks and assessment of gene sets significance. In this paper, we briefly review the progress of these two categories of analyses, especially some representative methods.

  10. Microarray Inspector: tissue cross contamination detection tool for microarray data.

    Science.gov (United States)

    Stępniak, Piotr; Maycock, Matthew; Wojdan, Konrad; Markowska, Monika; Perun, Serhiy; Srivastava, Aashish; Wyrwicz, Lucjan S; Świrski, Konrad

    2013-01-01

    Microarray technology changed the landscape of contemporary life sciences by providing vast amounts of expression data. Researchers are building up repositories of experiment results with various conditions and samples which serve the scientific community as a precious resource. Ensuring that the sample is of high quality is of utmost importance to this effort. The task is complicated by the fact that in many cases datasets lack information concerning pre-experimental quality assessment. Transcription profiling of tissue samples may be invalidated by an error caused by heterogeneity of the material. The risk of tissue cross contamination is especially high in oncological studies, where it is often difficult to extract the sample. Therefore, there is a need of developing a method detecting tissue contamination in a post-experimental phase. We propose Microarray Inspector: customizable, user-friendly software that enables easy detection of samples containing mixed tissue types. The advantage of the tool is that it uses raw expression data files and analyses each array independently. In addition, the system allows the user to adjust the criteria of the analysis to conform to individual needs and research requirements. The final output of the program contains comfortable to read reports about tissue contamination assessment with detailed information about the test parameters and results. Microarray Inspector provides a list of contaminant biomarkers needed in the analysis of adipose tissue contamination. Using real data (datasets from public repositories) and our tool, we confirmed high specificity of the software in detecting contamination. The results indicated the presence of adipose tissue admixture in a range from approximately 4% to 13% in several tested surgical samples.

  11. CMOS APS detector characterization for quantitative X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Endrizzi, Marco, E-mail: m.endrizzi@ucl.ac.uk [Dipartimento di Fisica, Università di Siena, Via Roma 56, 53100 Siena (Italy); Istituto Nazionale di Fisica Nucleare INFN, sezione di Pisa, 56127 Pisa (Italy); Oliva, Piernicola [Dipartimento di Chimica e Farmacia, Università di Sassari, via Piandanna 4, 07100 Sassari (Italy); Istituto Nazionale di Fisica Nucleare INFN, Sezione di Cagliari, 09042 Cagliari (Italy); Golosio, Bruno [Sezione di Matematica, Fisica e Ingegneria dell' Informazione, Università di Sassari, via Piandanna 4, 07100 Sassari (Italy); Istituto Nazionale di Fisica Nucleare INFN, Sezione di Cagliari, 09042 Cagliari (Italy); Delogu, Pasquale [Dipartimento di Fisica “E. Fermi”, Università di Pisa, Largo B. Pontecorvo 3, 56127 Pisa (Italy); Istituto Nazionale di Fisica Nucleare INFN, sezione di Pisa, 56127 Pisa (Italy)

    2013-03-01

    An X-ray Imaging detector based on CMOS Active Pixel Sensor and structured scintillator is characterized for quantitative X-ray imaging in the energy range 11–30 keV. Linearity, dark noise, spatial resolution and flat-field correction are the characteristics of the detector subject of investigation. The detector response, in terms of mean Analog-to-Digital Unit and noise, is modeled as a function of the energy and intensity of the X-rays. The model is directly tested using monochromatic X-ray beams and it is also indirectly validated by means of polychromatic X-ray-tube spectra. Such a characterization is suitable for quantitative X-ray imaging and the model can be used in simulation studies that take into account the actual performance of the detector.

  12. A CMOS imager using focal-plane pinhole effect for confocal multibeam scanning microscopy

    Science.gov (United States)

    Seo, Min-Woong; Wang, An; Li, Zhuo; Yasutomi, Keita; Kagawa, Keiichiro; Kawahito, Shoji

    2012-03-01

    A CMOS imager for confocal multi-beam scanning microscopy, where the pixel itself works as a pinhole, is proposed. This CMOS imager is suitable for building compact, low-power, and confocal microscopes because the complex Nipkow disk with a precisely aligned pinhole array can be omitted. The CMOS imager is composed of an array of sub-imagers, and can detect multiple beams at the same time. To achieve a focal-plane pinhole effect, only one pixel in each subimager, which is at the conjugate position of a light spot, accumulates the photocurrent, and the other pixels are unread. This operation is achieved by 2-dimensional vertical and horizontal shift registers. The proposed CMOS imager for the confocal multi-beam scanning microscope system was fabricated in 0.18-μm standard CMOS technology with a pinned photodiode option. The total area of the chip is 5.0mm × 5.0mm. The number of effective pixels is 256(Horizontal) × 256(Vertical). The pixel array consists of 32(H) × 32(V) sub-imagers each of which has 8(H) × 8(V) pixels. The pixel is an ordinary 4-transistor active pixel sensor using a pinned photodiode and the pixel size is 7.5μm × 7.5μm with a fillfactor of 45%. The basic operations such as normal image acquisition and selective pixel readout were experimentally confirmed. The sensitivity and the pixel conversion gain were 25.9 ke-/lx•sec and 70 μV/e- respectively.

  13. Développement d'un capteur CMOS intégré pour un futur dosimètre électronique personnel de neutrons

    OpenAIRE

    Zhang, Ying

    2012-01-01

    This thesis presents the development of CMOS sensors for a future neutron sensitive electronic individual dosemeter. Active dosemeters, exist but do not yet give results as satisfactory as passive devices, being however, mandatory for workers in addition to the passive dosimetry since 1995 (IEC 1323). The RaMsEs group in the laboratory IPHC is exploring a new compact device based on CMOS sensors for operational neutron dosimetry. In this thesis, a dedicated sensor, AlphaRad-2, with low noise ...

  14. Développement d'un capteur de pixels CMOS pour les couches externes du détecteur de vertex ILC

    OpenAIRE

    Zhang, Liang

    2013-01-01

    This work deals with the design of a CMOS pixel sensor prototype (called MIMOSA 31) for the outer layers of the International Linear Collider (ILC) vertex detector. CMOS pixel sensors (CPS) also called monolithic active pixel sensors (MAPS) have demonstrated attractive performance towards the requirements of the vertex detector of the future linear collider. MIMOSA 31developed at IPHC-Strasbourg is the first pixel sensor integrated with 4-bit column-level ADC for the outer layers. It is compo...

  15. BioCMOS Interfaces and Co-Design

    CERN Document Server

    Carrara, Sandro

    2013-01-01

    The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

  16. Lab-on-CMOS integration of microfluidics and electrochemical sensors.

    Science.gov (United States)

    Huang, Yue; Mason, Andrew J

    2013-10-07

    This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms.

  17. Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects

    NARCIS (Netherlands)

    Ramachandra Rao, P.

    2009-01-01

    The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-μm CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radia

  18. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    DEFF Research Database (Denmark)

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.;

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process...

  19. Development of a multi-analyte CMOS sensor for point-of-care testing

    Directory of Open Access Journals (Sweden)

    Holger Klapproth

    2015-09-01

    Full Text Available A typical microarray experiment requires both a biochip on which the biological reactions take place and a microarray scanner for analysis and visualization of the data. Here, we report on the generation of a chip, which consists of a CMOS photodiode array onto which receptors are immobilized and which are used for the detection and quantification of proteins in sera solution. Such an approach allows direct electronic read-out of the chip via a computer port so that the size of the whole analytical setup is very compact, opening the avenue to the generation of simple handheld devices. ELISA reactions directly performed on the surface of the photodiode arrays are used to measure a number of serum factors with a broad range in concentrations of samples with volumes of less than 10 μl. As in physiological sera analyte concentrations of the different parameters vary frequently by several orders of magnitude, parallel competitive reactions are used to adjust the dynamic range of several ELISA tests on the chip. We show as a demonstration case that this allows to quantify simultaneously C-reactive protein, Immunoglobulin E, Cystatin C, Myoglobin and Ferritin in a single assay.

  20. High-performance VGA-resolution digital color CMOS imager

    Science.gov (United States)

    Agwani, Suhail; Domer, Steve; Rubacha, Ray; Stanley, Scott

    1999-04-01

    This paper discusses the performance of a new VGA resolution color CMOS imager developed by Motorola on a 0.5micrometers /3.3V CMOS process. This fully integrated, high performance imager has on chip timing, control, and analog signal processing chain for digital imaging applications. The picture elements are based on 7.8micrometers active CMOS pixels that use pinned photodiodes for higher quantum efficiency and low noise performance. The image processing engine includes a bank of programmable gain amplifiers, line rate clamping for dark offset removal, real time auto white balancing, per column gain and offset calibration, and a 10 bit pipelined RSD analog to digital converter with a programmable input range. Post ADC signal processing includes features such as bad pixel replacement based on user defined thresholds levels, 10 to 8 bit companding and 5 tap FIR filtering. The sensor can be programmed via a standard I2C interface that runs on 3.3V clocks. Programmable features include variable frame rates using a constant frequency master clock, electronic exposure control, continuous or single frame capture, progressive or interlace scanning modes. Each pixel is individually addressable allowing region of interest imaging and image subsampling. The sensor operates with master clock frequencies of up to 13.5MHz resulting in 30FPS. A total programmable gain of 27dB is available. The sensor power dissipation is 400mW at full speed of operation. The low noise design yields a measured 'system on a chip' dynamic range of 50dB thus giving over 8 true bits of resolution. Extremely high conversion gain result in an excellent peak sensitivity of 22V/(mu) J/cm2 or 3.3V/lux-sec. This monolithic image capture and processing engine represent a compete imaging solution making it a true 'camera on a chip'. Yet in its operation it remains extremely easy to use requiring only one clock and a 3.3V power supply. Given the available features and performance levels, this sensor will be

  1. Surface characterization of carbohydrate microarrays.

    Science.gov (United States)

    Scurr, David J; Horlacher, Tim; Oberli, Matthias A; Werz, Daniel B; Kroeck, Lenz; Bufali, Simone; Seeberger, Peter H; Shard, Alexander G; Alexander, Morgan R

    2010-11-16

    Carbohydrate microarrays are essential tools to determine the biological function of glycans. Here, we analyze a glycan array by time-of-flight secondary ion mass spectrometry (ToF-SIMS) to gain a better understanding of the physicochemical properties of the individual spots and to improve carbohydrate microarray quality. The carbohydrate microarray is prepared by piezo printing of thiol-terminated sugars onto a maleimide functionalized glass slide. The hyperspectral ToF-SIMS imaging data are analyzed by multivariate curve resolution (MCR) to discern secondary ions from regions of the array containing saccharide, linker, salts from the printing buffer, and the background linker chemistry. Analysis of secondary ions from the linker common to all of the sugar molecules employed reveals a relatively uniform distribution of the sugars within the spots formed from solutions with saccharide concentration of 0.4 mM and less, whereas a doughnut shape is often formed at higher-concentration solutions. A detailed analysis of individual spots reveals that in the larger spots the phosphate buffered saline (PBS) salts are heterogeneously distributed, apparently resulting in saccharide concentrated at the rim of the spots. A model of spot formation from the evaporating sessile drop is proposed to explain these observations. Saccharide spot diameters increase with saccharide concentration due to a reduction in surface tension of the saccharide solution compared to PBS. The multivariate analytical partial least squares (PLS) technique identifies ions from the sugars that in the complex ToF-SIMS spectra correlate with the binding of galectin proteins.

  2. An Implantable CMOS Amplifier for Nerve Signals

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2003-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

  3. A CMOS current-mode operational amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1993-01-01

    A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...... current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2...

  4. CMOS Current-mode Operational Amplifier

    DEFF Research Database (Denmark)

    Kaulberg, Thomas

    1992-01-01

    A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...... current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2...

  5. CMOS biomicrosystems where electronics meets biology

    CERN Document Server

    2011-01-01

    "The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum"--

  6. Analysis of bipolar and CMOS amplifiers

    CERN Document Server

    Sodagar, Amir M

    2007-01-01

    The classical approach to analog circuit analysis is a daunting prospect to many students, requiring tedious enumeration of contributing factors and lengthy calculations. Most textbooks apply this cumbersome approach to small-signal amplifiers, which becomes even more difficult as the number of components increases. Analysis of Bipolar and CMOS Amplifiers offers students an alternative that enables quick and intuitive analysis and design: the analysis-by-inspection method.This practical and student-friendly text demonstrates how to achieve approximate results that fall within an acceptable ran

  7. Vertical Isolation for Photodiodes in CMOS Imagers

    Science.gov (United States)

    Pain, Bedabrata

    2008-01-01

    In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

  8. An Approach for Low Power CMOS Design

    Directory of Open Access Journals (Sweden)

    Ravindra kumar chejara

    2015-03-01

    Full Text Available Power dissipation has emerged an important parameter in design of Low Power CMOS circuits. For this level converter and dual supply voltage assignments are used to reduce the power dissipation and propagation delay. In this paper, variable supply-voltage scheme (dual-VS scheme for dual power supplies along with voltage level converter is presented. Also paper presents an overall comparative analysis among various methods to achieve voltage level shifter even in lower technology comparative to higher ones and help user to select the best methods for same at this technology.

  9. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  10. RF Circuit Design in Nanometer CMOS

    OpenAIRE

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern multi-band communication systems as these systems move toward software-defined radio. These trends in technology and system design call for a re-thinking of analog and RF circuit design in nanometer C...

  11. Method and circuitry for CMOS transconductor linearization

    OpenAIRE

    Kundur Subramaniyan, Harish; Klumperink, Eric; Srinivasan, Venkatesh; Kiaei, Ali; Nauta, Bram

    2016-01-01

    Third order distortion is reduced in a CMOS transconductor circuit that includes a first N-channel transistor and a first P-channel transistor, gates of the first N-channel transistor and the first P-channel transistor being coupled to receive an input signal. Drains of the first N-channel transistor and first P-channel transistor are coupled to an output conductor. A first degeneration resistor is coupled between a source of the first P-channel transistor and a first supply voltage and a sec...

  12. Silicon Light Emitting Devices in CMOS Technology

    Institute of Scientific and Technical Information of China (English)

    CHEN Hong-Da; LIU Hai-Jun; LIU Jin-Bin; GU Ming; HUANG Bei-Ju

    2007-01-01

    @@ Two silicon light emitting devices with different structures are realized in standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/cm2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.

  13. Integrated Amplification Microarrays for Infectious Disease Diagnostics

    Directory of Open Access Journals (Sweden)

    Darrell P. Chandler

    2012-11-01

    Full Text Available This overview describes microarray-based tests that combine solution-phase amplification chemistry and microarray hybridization within a single microfluidic chamber. The integrated biochemical approach improves microarray workflow for diagnostic applications by reducing the number of steps and minimizing the potential for sample or amplicon cross-contamination. Examples described herein illustrate a basic, integrated approach for DNA and RNA genomes, and a simple consumable architecture for incorporating wash steps while retaining an entirely closed system. It is anticipated that integrated microarray biochemistry will provide an opportunity to significantly reduce the complexity and cost of microarray consumables, equipment, and workflow, which in turn will enable a broader spectrum of users to exploit the intrinsic multiplexing power of microarrays for infectious disease diagnostics.

  14. Spotting effect in microarray experiments

    Directory of Open Access Journals (Sweden)

    Mary-Huard Tristan

    2004-05-01

    Full Text Available Abstract Background Microarray data must be normalized because they suffer from multiple biases. We have identified a source of spatial experimental variability that significantly affects data obtained with Cy3/Cy5 spotted glass arrays. It yields a periodic pattern altering both signal (Cy3/Cy5 ratio and intensity across the array. Results Using the variogram, a geostatistical tool, we characterized the observed variability, called here the spotting effect because it most probably arises during steps in the array printing procedure. Conclusions The spotting effect is not appropriately corrected by current normalization methods, even by those addressing spatial variability. Importantly, the spotting effect may alter differential and clustering analysis.

  15. Variation-aware advanced CMOS devices and SRAM

    CERN Document Server

    Shin, Changhwan

    2016-01-01

    This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

  16. Design of high speed camera based on CMOS technology

    Science.gov (United States)

    Park, Sei-Hun; An, Jun-Sick; Oh, Tae-Seok; Kim, Il-Hwan

    2007-12-01

    The capacity of a high speed camera in taking high speed images has been evaluated using CMOS image sensors. There are 2 types of image sensors, namely, CCD and CMOS sensors. CMOS sensor consumes less power than CCD sensor and can take images more rapidly. High speed camera with built-in CMOS sensor is widely used in vehicle crash tests and airbag controls, golf training aids, and in bullet direction measurement in the military. The High Speed Camera System made in this study has the following components: CMOS image sensor that can take about 500 frames per second at a resolution of 1280*1024; FPGA and DDR2 memory that control the image sensor and save images; Camera Link Module that transmits saved data to PC; and RS-422 communication function that enables control of the camera from a PC.

  17. Theoretical performance analysis for CMOS based high resolution detectors.

    Science.gov (United States)

    Jain, Amit; Bednarek, Daniel R; Rudin, Stephen

    2013-03-06

    High resolution imaging capabilities are essential for accurately guiding successful endovascular interventional procedures. Present x-ray imaging detectors are not always adequate due to their inherent limitations. The newly-developed high-resolution micro-angiographic fluoroscope (MAF-CCD) detector has demonstrated excellent clinical image quality; however, further improvement in performance and physical design may be possible using CMOS sensors. We have thus calculated the theoretical performance of two proposed CMOS detectors which may be used as a successor to the MAF. The proposed detectors have a 300 μm thick HL-type CsI phosphor, a 50 μm-pixel CMOS sensor with and without a variable gain light image intensifier (LII), and are designated MAF-CMOS-LII and MAF-CMOS, respectively. For the performance evaluation, linear cascade modeling was used. The detector imaging chains were divided into individual stages characterized by one of the basic processes (quantum gain, binomial selection, stochastic and deterministic blurring, additive noise). Ranges of readout noise and exposure were used to calculate the detectors' MTF and DQE. The MAF-CMOS showed slightly better MTF than the MAF-CMOS-LII, but the MAF-CMOS-LII showed far better DQE, especially for lower exposures. The proposed detectors can have improved MTF and DQE compared with the present high resolution MAF detector. The performance of the MAF-CMOS is excellent for the angiography exposure range; however it is limited at fluoroscopic levels due to additive instrumentation noise. The MAF-CMOS-LII, having the advantage of the variable LII gain, can overcome the noise limitation and hence may perform exceptionally for the full range of required exposures; however, it is more complex and hence more expensive.

  18. Living Cell Microarrays: An Overview of Concepts

    Directory of Open Access Journals (Sweden)

    Rebecca Jonczyk

    2016-05-01

    Full Text Available Living cell microarrays are a highly efficient cellular screening system. Due to the low number of cells required per spot, cell microarrays enable the use of primary and stem cells and provide resolution close to the single-cell level. Apart from a variety of conventional static designs, microfluidic microarray systems have also been established. An alternative format is a microarray consisting of three-dimensional cell constructs ranging from cell spheroids to cells encapsulated in hydrogel. These systems provide an in vivo-like microenvironment and are preferably used for the investigation of cellular physiology, cytotoxicity, and drug screening. Thus, many different high-tech microarray platforms are currently available. Disadvantages of many systems include their high cost, the requirement of specialized equipment for their manufacture, and the poor comparability of results between different platforms. In this article, we provide an overview of static, microfluidic, and 3D cell microarrays. In addition, we describe a simple method for the printing of living cell microarrays on modified microscope glass slides using standard DNA microarray equipment available in most laboratories. Applications in research and diagnostics are discussed, e.g., the selective and sensitive detection of biomarkers. Finally, we highlight current limitations and the future prospects of living cell microarrays.

  19. Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

    Science.gov (United States)

    Kanisauskas, K.; Affolder, A.; Arndt, K.; Bates, R.; Benoit, M.; Di Bello, F.; Blue, A.; Bortoletto, D.; Buckland, M.; Buttar, C.; Caragiulo, P.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hiti, B.; Hoeferkamp, M.; Hommels, L. B. A.; Huffman, B. T.; John, J.; Kenney, C.; Kramberger, J.; Liang, Z.; Mandic, I.; Maneuski, D.; Martinez-Mckinney, F.; MacMahon, S.; Meng, L.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Peric, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seidel, S.; Seiden, A.; Shipsey, I.; Song, W.; Staniztki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zhang, J.; Zhu, H.

    2017-02-01

    CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e‑ to 386 e‑ and from 75 e‑ to 277 e‑ for the corresponding pixels.

  20. "Harshlighting" small blemishes on microarrays

    Directory of Open Access Journals (Sweden)

    Wittkowski Knut M

    2005-03-01

    Full Text Available Abstract Background Microscopists are familiar with many blemishes that fluorescence images can have due to dust and debris, glass flaws, uneven distribution of fluids or surface coatings, etc. Microarray scans show similar artefacts, which affect the analysis, particularly when one tries to detect subtle changes. However, most blemishes are hard to find by the unaided eye, particularly in high-density oligonucleotide arrays (HDONAs. Results We present a method that harnesses the statistical power provided by having several HDONAs available, which are obtained under similar conditions except for the experimental factor. This method "harshlights" blemishes and renders them evident. We find empirically that about 25% of our chips are blemished, and we analyze the impact of masking them on screening for differentially expressed genes. Conclusion Experiments attempting to assess subtle expression changes should be carefully screened for blemishes on the chips. The proposed method provides investigators with a novel robust approach to improve the sensitivity of microarray analyses. By utilizing topological information to identify and mask blemishes prior to model based analyses, the method prevents artefacts from confounding the process of background correction, normalization, and summarization.

  1. Quality assessment of ultra-thin CMOS sensors for the micro vertex detector of the CBM experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Koziel, Michal; Bialas, Norbert; Milanovic, Borislaw [University of Frankfurt, Germany (Germany); Collaboration: CBM-MVD-Collaboration

    2014-07-01

    The Compressed Baryonic Matter experiment installed at the future FAIR facility will be equipped with a high-precision micro-vertex detector aiming at an outstanding primary and secondary vertex resolution. Highly granular, ultra-low material budget sensors, so-called Monolithic Active Pixel Sensors, manufactured at standard CMOS process, will be employed. Imperfections in CMOS process as well as further dicing and thinning procedures affect the yield of sensors to be mounted in the detector stations. To select sensors with the best characteristics, probe testing prior to integration is mandatory. handling and testing of 50-μm thin CMOS pixel sensors is non-standard. This contribution presents the dedicated tools and procedures, focusing on the question whether such thin devices can be efficiently and reliably probe-tested.

  2. Packaging commercial CMOS chips for lab on a chip integration.

    Science.gov (United States)

    Datta-Chaudhuri, Timir; Abshire, Pamela; Smela, Elisabeth

    2014-05-21

    Combining integrated circuitry with microfluidics enables lab-on-a-chip (LOC) devices to perform sensing, freeing them from benchtop equipment. However, this integration is challenging with small chips, as is briefly reviewed with reference to key metrics for package comparison. In this paper we present a simple packaging method for including mm-sized, foundry-fabricated dies containing complementary metal oxide semiconductor (CMOS) circuits within LOCs. The chip is embedded in an epoxy handle wafer to yield a level, large-area surface, allowing subsequent photolithographic post-processing and microfluidic integration. Electrical connection off-chip is provided by thin film metal traces passivated with parylene-C. The parylene is patterned to selectively expose the active sensing area of the chip, allowing direct interaction with a fluidic environment. The method accommodates any die size and automatically levels the die and handle wafer surfaces. Functionality was demonstrated by packaging two different types of CMOS sensor ICs, a bioamplifier chip with an array of surface electrodes connected to internal amplifiers for recording extracellular electrical signals and a capacitance sensor chip for monitoring cell adhesion and viability. Cells were cultured on the surface of both types of chips, and data were acquired using a PC. Long term culture (weeks) showed the packaging materials to be biocompatible. Package lifetime was demonstrated by exposure to fluids over a longer duration (months), and the package was robust enough to allow repeated sterilization and re-use. The ease of fabrication and good performance of this packaging method should allow wide adoption, thereby spurring advances in miniaturized sensing systems.

  3. A CMOS Neural Interface for a Multichannel Vestibular Prosthesis.

    Science.gov (United States)

    Hageman, Kristin N; Kalayjian, Zaven K; Tejada, Francisco; Chiang, Bryce; Rahman, Mehdi A; Fridman, Gene Y; Dai, Chenkai; Pouliquen, Philippe O; Georgiou, Julio; Della Santina, Charles C; Andreou, Andreas G

    2016-04-01

    We present a high-voltage CMOS neural-interface chip for a multichannel vestibular prosthesis (MVP) that measures head motion and modulates vestibular nerve activity to restore vision- and posture-stabilizing reflexes. This application specific integrated circuit neural interface (ASIC-NI) chip was designed to work with a commercially available microcontroller, which controls the ASIC-NI via a fast parallel interface to deliver biphasic stimulation pulses with 9-bit programmable current amplitude via 16 stimulation channels. The chip was fabricated in the ONSemi C5 0.5 micron, high-voltage CMOS process and can accommodate compliance voltages up to 12 V, stimulating vestibular nerve branches using biphasic current pulses up to 1.45±0.06 mA with durations as short as 10 μs/phase. The ASIC-NI includes a dedicated digital-to-analog converter for each channel, enabling it to perform complex multipolar stimulation. The ASIC-NI replaces discrete components that cover nearly half of the 2nd generation MVP (MVP2) printed circuit board, reducing the MVP system size by 48% and power consumption by 17%. Physiological tests of the ASIC-based MVP system (MVP2A) in a rhesus monkey produced reflexive eye movement responses to prosthetic stimulation similar to those observed when using the MVP2. Sinusoidal modulation of stimulus pulse rate from 68-130 pulses per second at frequencies from 0.1 to 5 Hz elicited appropriately-directed slow phase eye velocities ranging in amplitude from 1.9-16.7 °/s for the MVP2 and 2.0-14.2 °/s for the MVP2A. The eye velocities evoked by MVP2 and MVP2A showed no significant difference ( t-test, p=0.34), suggesting that the MVP2A achieves performance at least as good as the larger MVP2.

  4. Modulated CMOS camera for fluorescence lifetime microscopy.

    Science.gov (United States)

    Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

    2015-12-01

    Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition.

  5. A Biologically Inspired CMOS Image Sensor

    CERN Document Server

    Sarkar, Mukul

    2013-01-01

    Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

  6. Polymer microarray technology for stem cell engineering.

    Science.gov (United States)

    Coyle, Robert; Jia, Jia; Mei, Ying

    2016-04-01

    Stem cells hold remarkable promise for applications in tissue engineering and disease modeling. During the past decade, significant progress has been made in developing soluble factors (e.g., small molecules and growth factors) to direct stem cells into a desired phenotype. However, the current lack of suitable synthetic materials to regulate stem cell activity has limited the realization of the enormous potential of stem cells. This can be attributed to a large number of materials properties (e.g., chemical structures and physical properties of materials) that can affect stem cell fate. This makes it challenging to design biomaterials to direct stem cell behavior. To address this, polymer microarray technology has been developed to rapidly identify materials for a variety of stem cell applications. In this article, we summarize recent developments in polymer array technology and their applications in stem cell engineering. Stem cells hold remarkable promise for applications in tissue engineering and disease modeling. In the last decade, significant progress has been made in developing chemically defined media to direct stem cells into a desired phenotype. However, the current lack of the suitable synthetic materials to regulate stem cell activities has been limiting the realization of the potential of stem cells. This can be attributed to the number of variables in material properties (e.g., chemical structures and physical properties) that can affect stem cells. Polymer microarray technology has shown to be a powerful tool to rapidly identify materials for a variety of stem cell applications. Here we summarize recent developments in polymer array technology and their applications in stem cell engineering. Copyright © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  7. A REVIEW OF 2.4 GHZ LNA USING DIFFERENT TOPOLOGIES IN STANDARD CMOS

    OpenAIRE

    Saurabh Pargaien*; Ankur Singh Bist*; Rudranshu Sharma; Anubhav Patrick

    2016-01-01

    This paper presents the literature review of various designs of LNA using different topologies. Designing very high-performance LNAs is an active research area and is of crucial importance for wireless technologies. CMOS LNA architectures can be divided into two major groups the common source and the common gate LNA. CS LNA output gate current noise increases with the increase in frequency. In CGLNA noise factor is nearly constant irrespective of the frequency of operation and bandwidth. ...

  8. Design of a co-integrated CMOS/NEMS oscillator with a simple electronic circuit

    OpenAIRE

    Arndt, Grégory; Colinet, Eric; Juillard, Jérôme

    2010-01-01

    This paper presents the theoretical study of a monolithically integrated NEMS/CMOS oscillator with electrostatic actuation and piezoresistive detection. A feedback circuit based on a single active transistor is implemented. The proposed architecture is so compact that it can be implemented with ease in a sensor array application for example. A brief description of the NEMS resonator is given and the conditions for oscillation build-up are stated. We show how the co-integration allows the use ...

  9. Pineal function: impact of microarray analysis

    DEFF Research Database (Denmark)

    Klein, David C; Bailey, Michael J; Carter, David A

    2009-01-01

    Microarray analysis has provided a new understanding of pineal function by identifying genes that are highly expressed in this tissue relative to other tissues and also by identifying over 600 genes that are expressed on a 24-h schedule. This effort has highlighted surprising similarity...... foundation that microarray analysis has provided will broadly support future research on pineal function....

  10. The EADGENE Microarray Data Analysis Workshop

    NARCIS (Netherlands)

    Koning, de D.J.; Jaffrezic, F.; Lund, M.S.; Watson, M.; Channing, C.; Hulsegge, B.; Pool, M.H.; Buitenhuis, B.; Hedegaard, J.; Hornshoj, H.; Sorensen, P.; Marot, G.; Delmas, C.; Lê Cao, K.A.; San Cristobal, M.; Baron, M.D.; Malinverni, R.; Stella, A.; Brunner, R.M.; Seyfert, H.M.; Jensen, K.; Mouzaki, D.; Waddington, D.; Jiménez-Marín, A.; Perez-Alegre, M.; Perez-Reinado, E.; Closset, R.; Detilleux, J.C.; Dovc, P.; Lavric, M.; Nie, H.; Janss, L.

    2007-01-01

    Microarray analyses have become an important tool in animal genomics. While their use is becoming widespread, there is still a lot of ongoing research regarding the analysis of microarray data. In the context of a European Network of Excellence, 31 researchers representing 14 research groups from 10

  11. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Directory of Open Access Journals (Sweden)

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  12. Column-Parallel Single Slope ADC with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors

    NARCIS (Netherlands)

    Chen, Y.; Theuwissen, A.J.P.; Chae, Y.

    2011-01-01

    This paper presents a low noise CMOS image sensor (CIS) using 10/12 bit configurable column-parallel single slope ADCs (SS-ADCs) and digital correlated multiple sampling (CMS). The sensor used is a conventional 4T active pixel with a pinned-photodiode as photon detector. The test sensor was fabricat

  13. CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

    2000-08-10

    In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

  14. In control: systematic assessment of microarray performance.

    Science.gov (United States)

    van Bakel, Harm; Holstege, Frank C P

    2004-10-01

    Expression profiling using DNA microarrays is a powerful technique that is widely used in the life sciences. How reliable are microarray-derived measurements? The assessment of performance is challenging because of the complicated nature of microarray experiments and the many different technology platforms. There is a mounting call for standards to be introduced, and this review addresses some of the issues that are involved. Two important characteristics of performance are accuracy and precision. The assessment of these factors can be either for the purpose of technology optimization or for the evaluation of individual microarray hybridizations. Microarray performance has been evaluated by at least four approaches in the past. Here, we argue that external RNA controls offer the most versatile system for determining performance and describe how such standards could be implemented. Other uses of external controls are discussed, along with the importance of probe sequence availability and the quantification of labelled material.

  15. The EADGENE Microarray Data Analysis Workshop

    DEFF Research Database (Denmark)

    de Koning, Dirk-Jan; Jaffrézic, Florence; Lund, Mogens Sandø

    2007-01-01

    Microarray analyses have become an important tool in animal genomics. While their use is becoming widespread, there is still a lot of ongoing research regarding the analysis of microarray data. In the context of a European Network of Excellence, 31 researchers representing 14 research groups from...... 10 countries performed and discussed the statistical analyses of real and simulated 2-colour microarray data that were distributed among participants. The real data consisted of 48 microarrays from a disease challenge experiment in dairy cattle, while the simulated data consisted of 10 microarrays...... statistical weights, to omitting a large number of spots or omitting entire slides. Surprisingly, these very different approaches gave quite similar results when applied to the simulated data, although not all participating groups analysed both real and simulated data. The workshop was very successful...

  16. Chaotic mixer improves microarray hybridization.

    Science.gov (United States)

    McQuain, Mark K; Seale, Kevin; Peek, Joel; Fisher, Timothy S; Levy, Shawn; Stremler, Mark A; Haselton, Frederick R

    2004-02-15

    Hybridization is an important aspect of microarray experimental design which influences array signal levels and the repeatability of data within an array and across different arrays. Current methods typically require 24h and use target inefficiently. In these studies, we compare hybridization signals obtained in conventional static hybridization, which depends on diffusional target delivery, with signals obtained in a dynamic hybridization chamber, which employs a fluid mixer based on chaotic advection theory to deliver targets across a conventional glass slide array. Microarrays were printed with a pattern of 102 identical probe spots containing a 65-mer oligonucleotide capture probe. Hybridization of a 725-bp fluorescently labeled target was used to measure average target hybridization levels, local signal-to-noise ratios, and array hybridization uniformity. Dynamic hybridization for 1h with 1 or 10ng of target DNA increased hybridization signal intensities approximately threefold over a 24-h static hybridization. Similarly, a 10- or 60-min dynamic hybridization of 10ng of target DNA increased hybridization signal intensities fourfold over a 24h static hybridization. In time course studies, static hybridization reached a maximum within 8 to 12h using either 1 or 10ng of target. In time course studies using the dynamic hybridization chamber, hybridization using 1ng of target increased to a maximum at 4h and that using 10ng of target did not vary over the time points tested. In comparison to static hybridization, dynamic hybridization reduced the signal-to-noise ratios threefold and reduced spot-to-spot variation twofold. Therefore, we conclude that dynamic hybridization based on a chaotic mixer design improves both the speed of hybridization and the maximum level of hybridization while increasing signal-to-noise ratios and reducing spot-to-spot variation.

  17. Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

    Science.gov (United States)

    Pain, Bedabrata; Cunningham, Thomas; Hancock, Bruce

    2008-01-01

    Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

  18. A monolithically integrated torsional CMOS-MEMS relay

    Science.gov (United States)

    Riverola, M.; Sobreviela, G.; Torres, F.; Uranga, A.; Barniol, N.

    2016-11-01

    We report experimental demonstrations of a torsional microelectromechanical (MEM) relay fabricated using the CMOS-MEMS approach (or intra-CMOS) which exploits the full foundry inherent characteristics enabling drastic reduction of the fabrication costs and batch production. In particular, the relay is monolithically integrated in the back end of line of a commercial standard CMOS technology (AMS 0.35 μm) and released by means of a simple one-step mask-less wet etching. The fabricated torsional relay exhibits an extremely steep switching behaviour symmetrical about both contact sides with an on-state contact resistance in the k Ω -range throughout the on-off cycling test.

  19. Design of Low Voltage Low Power CMOS OP-AMP

    OpenAIRE

    2014-01-01

    Operational amplifiers are an integral part of many analog and mixed signal systems. As the demand for mixed mode integrated circuits increases, the design of analog circuits such as operational amplifiers in CMOS technology becomes more critical. This paper presents a two stage CMOS operational amplifier, which operates at ±1.8V power supply using TSMC 0.18um CMOS technology. The OP-AMP designed exhibit unity gain frequency of 12.6 MHz, and gain of 55.5db with 300uw power dissipa...

  20. High-speed multicolor photometry with CMOS cameras

    CERN Document Server

    Pokhvala, S M; Reshetnyk, V M

    2012-01-01

    We present the results of testing the commercial digital camera Nikon D90 with a CMOS sensor for high-speed photometry with a small telescope Celestron 11" on Peak Terskol. CMOS sensor allows to perform photometry in 3 filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR color system of CMOS sensors is close to the Johnson BVR system. The results of testing show that we can measure the stars up to V $\\simeq$ 14 with the precision of 0.01 mag. Stars up to magnitude V $\\sim$ 10 can shoot at 24 frames per second in the video mode.

  1. High-Speed Low Power Design in CMOS

    DEFF Research Database (Denmark)

    Ghani, Arfan; Usmani, S. H.; Stassen, Flemming

    2004-01-01

    Static CMOS design displays benefits such as low power consumption, dominated by dynamic power consumption. In contrast, MOS Current Mode Logic (MCML) displays static rather than dynamic power consumption. High-speed low-power design is one of the many application areas in VLSI that require...... the appropriate domains of performance and power requirements in which MCML presents benefits over standard CMOS. An optimized cell library is designed and implemented in both CMOS and MCML in order to make a comparison with reference to speed and power. Much more time is spent in order to nderstand...

  2. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    KAUST Repository

    Saffih, Faycal

    2012-06-01

    In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

  3. New Simple CMOS Realization of Voltage Differencing Transconductance Amplifier and Its RF Filter Application

    Directory of Open Access Journals (Sweden)

    A. Yeşil

    2011-09-01

    Full Text Available The voltage differencing transconductance amplifier (VDTA is a recently introduced active element for analog signal processing. However, the realization of VDTA is not given by any author yet. In this work, a new and simple CMOS realization of VDTA is presented. The proposed block has two voltage inputs and two kinds of current output, so it is functional for voltage- and transconductance-mode operation. Furthermore, VDTA exhibits two different values of transconductance so that there is no need to external resistors for VDTA based applications which seems to be a good advantage for analog circuit designer. A CMOS implementation of VDTA and a voltage-mode VDTA based filter are proposed and simulated. An application example of fourth order flat-band band-pass amplifier is given and the performance of the circuit is demonstrated by comparing the theory and simulation.

  4. Characterization and performance studies of high-voltage CMOS based pixel sensors

    CERN Document Server

    Smaranda, Dumitru Dan

    2015-01-01

    The high luminosity upgrade of the LHC will push the limits for detectors, specially the silicon trackers which are closest to the interaction point. The ATLAS CMOS Sensor R&D efort is investigating a new technology using high-voltage CMOS processes for producing pixel and strip sensors. In contrast to the currently used technology these devices implement active electronics on the sensor itself, offering a multitude of tuning parameters for achieving the best performance. My summer project revolved around characterising existing samples along with assembling and debugging hardware required for their improvement and functionality. Other tasks involved writing communication protocols using pyBAR to remotely control injection circuitry on a GPAC card, and helping various members of the group with data collection and analysis. Through the summer student programme I have had the opportunity to be part of a vibrant scientic community at the forefront of research, to create bonds with fellow students from univ...

  5. Low Power Design of High Speed CMOS Pulse Stream Neuron Circuit

    Institute of Scientific and Technical Information of China (English)

    陈继伟; 石秉学

    2000-01-01

    A new pulse stream neuron circuit is presented, which can be obtained in the digital CMOS process and combines both the merits of digital circuits and analog ones. The output is expressed by the frequency of the pulses with transfer characteristic, which is correspondent with the ideal sigmoid curve perfectly. Moreover, the pulse-active strategy is introduced into the design of this CMOS pulse stream neuron circuit for the first time in order to reduce the power dissipation, which is applicable to the low-power design of mixed-signal circuits,too. A simple technical process and compact architecture make this circuit work at a higher speed and with lower power dissipation and smaller area.

  6. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

    CERN Document Server

    Huffman, B T; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C; Caragiulo, P; Das, D; Dopke, J; Dragone, A; Ehrler, F; Fadeyev, V; Galloway, Z; Grabas, H; Gregor, I M; Grenier, P; Grillo, A; Hoeferkamp, M; Hommels, L B A; John, J; Kanisauskas, K; Kenney, C; Kramberger, J; Liang, Z; Mandic, I; Maneuski, D; Martinez-McKinney, F; McMahon, S; Meng, L; Mikuž, M; Muenstermann, D; Nickerson, R; Peric, I; Phillips, P; Plackett, R; Rubbo, F; Segal, J; Seidel, S; Seiden, A; Shipsey, I; Song, W; Stanitzki, M; Su, D; Tamma, C; Turchetta, R; Vigani, L; olk, J; Wang, R; Warren, M; Wilson, F; Worm, S; Xiu, Q; Zhang, J; Zhu, H

    2016-01-01

    The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

  7. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    Science.gov (United States)

    Sawadsaringkarn, Y.; Kimura, H.; Maezawa, Y.; Nakajima, A.; Kobayashi, T.; Sasagawa, K.; Noda, T.; Tokuda, T.; Ohta, J.

    2012-03-01

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  8. Alternative Post-Processing on a CMOS Chip to Fabricate a Planar Microelectrode Array

    Science.gov (United States)

    López-Huerta, Francisco; Herrera-May, Agustín L.; Estrada-López, Johan J.; Zuñiga-Islas, Carlos; Cervantes-Sanchez, Blanca; Soto, Enrique; Soto-Cruz, Blanca S.

    2011-01-01

    We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 μm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+-type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications. PMID:22346681

  9. Alternative post-processing on a CMOS chip to fabricate a planar microelectrode array.

    Science.gov (United States)

    López-Huerta, Francisco; Herrera-May, Agustín L; Estrada-López, Johan J; Zuñiga-Islas, Carlos; Cervantes-Sanchez, Blanca; Soto, Enrique; Soto-Cruz, Blanca S

    2011-01-01

    We present an alternative post-processing on a CMOS chip to release a planar microelectrode array (pMEA) integrated with its signal readout circuit, which can be used for monitoring the neuronal activity of vestibular ganglion neurons in newborn Wistar strain rats. This chip is fabricated through a 0.6 μm CMOS standard process and it has 12 pMEA through a 4 × 3 electrodes matrix. The alternative CMOS post-process includes the development of masks to protect the readout circuit and the power supply pads. A wet etching process eliminates the aluminum located on the surface of the p+ -type silicon. This silicon is used as transducer for recording the neuronal activity and as interface between the readout circuit and neurons. The readout circuit is composed of an amplifier and tunable bandpass filter, which is placed on a 0.015 mm2 silicon area. The tunable bandpass filter has a bandwidth of 98 kHz and a common mode rejection ratio (CMRR) of 87 dB. These characteristics of the readout circuit are appropriate for neuronal recording applications.

  10. Noise Properties of CMOS Current Conveyors

    DEFF Research Database (Denmark)

    Bruun, Erik

    1996-01-01

    The definition of the current conveyor is presented and it is shown how different generations of current conveyors can all be combined into a single definition of a multiple-output second generation current conveyor (CCII). Next, noise sources are introduced into the model, and a general noise...... model for the current conveyor is established. This model is used for the analysis of selected examples of current conveyor based operational amplifier configurations and the relative merits with respect to the noise performance of these configurations are discussed. Finally, the noise model...... is developed for a CMOS current conveyor implementation, and optimization strategies for noise reduction are discussed. It is concluded that a class AB implementation provides more flexibility than does a class A configuration. In both cases it is essential to design low noise current mirrors and current...

  11. IMEC pushes the limits of CMOS

    Directory of Open Access Journals (Sweden)

    George Marsh

    2002-06-01

    Visionary stuff, but although the day of the cyborg may still be some way off, IMEC (Inter-University MicroElectronics Centre — Europe’s leading independent microelectronics research organization — sees its role as expediting some aspects of this future. This means, inter alia, a dedication to maintaining the currency of Moore’s Law, in the belief that this can continue for several years yet before fundamental limits impose insurmountable barriers. Success will require further extension of the boundaries of complementary metal oxide silicon (CMOS, that backbone of mainstream electronic technology. Materials, both the manipulation of existing and development of new, are germane to this, as Materials Today discovered on a recent visit.

  12. Real-time, multiplexed electrochemical DNA detection using an active complementary metal-oxide-semiconductor biosensor array with integrated sensor electronics.

    Science.gov (United States)

    Levine, Peter M; Gong, Ping; Levicky, Rastislav; Shepard, Kenneth L

    2009-03-15

    Optical biosensing based on fluorescence detection has arguably become the standard technique for quantifying extents of hybridization between surface-immobilized probes and fluorophore-labeled analyte targets in DNA microarrays. However, electrochemical detection techniques are emerging which could eliminate the need for physically bulky optical instrumentation, enabling the design of portable devices for point-of-care applications. Unlike fluorescence detection, which can function well using a passive substrate (one without integrated electronics), multiplexed electrochemical detection requires an electronically active substrate to analyze each array site and benefits from the addition of integrated electronic instrumentation to further reduce platform size and eliminate the electromagnetic interference that can result from bringing non-amplified signals off chip. We report on an active electrochemical biosensor array, constructed with a standard complementary metal-oxide-semiconductor (CMOS) technology, to perform quantitative DNA hybridization detection on chip using targets conjugated with ferrocene redox labels. A 4 x 4 array of gold working electrodes and integrated potentiostat electronics, consisting of control amplifiers and current-input analog-to-digital converters, on a custom-designed 5 mm x 3 mm CMOS chip drive redox reactions using cyclic voltammetry, sense DNA binding, and transmit digital data off chip for analysis. We demonstrate multiplexed and specific detection of DNA targets as well as real-time monitoring of hybridization, a task that is difficult, if not impossible, with traditional fluorescence-based microarrays.

  13. A Multipurpose CMOS Platform for Nanosensing

    Directory of Open Access Journals (Sweden)

    Alberto Bonanno

    2016-11-01

    Full Text Available This paper presents a customizable sensing system based on functionalized nanowires (NWs assembled onto complementary metal oxide semiconductor (CMOS technology. The Micro-for-Nano (M4N chip integrates on top of the electronics an array of aluminum microelectrodes covered with gold by means of a customized electroless plating process. The NW assembly process is driven by an array of on-chip dielectrophoresis (DEP generators, enabling a custom layout of different nanosensors on the same microelectrode array. The electrical properties of each assembled NW are singularly sensed through an in situ CMOS read-out circuit (ROC that guarantees a low noise and reliable measurement. The M4N chip is directly connected to an external microcontroller for configuration and data processing. The processed data are then redirected to a workstation for real-time data visualization and storage during sensing experiments. As proof of concept, ZnO nanowires have been integrated onto the M4N chip to validate the approach that enables different kind of sensing experiments. The device has been then irradiated by an external UV source with adjustable power to measure the ZnO sensitivity to UV-light exposure. A maximum variation of about 80% of the ZnO-NW resistance has been detected by the M4N system when the assembled 5 μ m × 500 nm single ZnO-NW is exposed to an estimated incident radiant UV-light flux in the range of 1 nW–229 nW. The performed experiments prove the efficiency of the platform conceived for exploiting any kind of material that can change its capacitance and/or resistance due to an external stimulus.

  14. CMOS image sensor with contour enhancement

    Science.gov (United States)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  15. Independent component analysis of Alzheimer's DNA microarray gene expression data

    Directory of Open Access Journals (Sweden)

    Vanderburg Charles R

    2009-01-01

    Full Text Available Abstract Background Gene microarray technology is an effective tool to investigate the simultaneous activity of multiple cellular pathways from hundreds to thousands of genes. However, because data in the colossal amounts generated by DNA microarray technology are usually complex, noisy, high-dimensional, and often hindered by low statistical power, their exploitation is difficult. To overcome these problems, two kinds of unsupervised analysis methods for microarray data: principal component analysis (PCA and independent component analysis (ICA have been developed to accomplish the task. PCA projects the data into a new space spanned by the principal components that are mutually orthonormal to each other. The constraint of mutual orthogonality and second-order statistics technique within PCA algorithms, however, may not be applied to the biological systems studied. Extracting and characterizing the most informative features of the biological signals, however, require higher-order statistics. Results ICA is one of the unsupervised algorithms that can extract higher-order statistical structures from data and has been applied to DNA microarray gene expression data analysis. We performed FastICA method on DNA microarray gene expression data from Alzheimer's disease (AD hippocampal tissue samples and consequential gene clustering. Experimental results showed that the ICA method can improve the clustering results of AD samples and identify significant genes. More than 50 significant genes with high expression levels in severe AD were extracted, representing immunity-related protein, metal-related protein, membrane protein, lipoprotein, neuropeptide, cytoskeleton protein, cellular binding protein, and ribosomal protein. Within the aforementioned categories, our method also found 37 significant genes with low expression levels. Moreover, it is worth noting that some oncogenes and phosphorylation-related proteins are expressed in low levels. In

  16. Chemical microarray: a new tool for drug screening and discovery.

    Science.gov (United States)

    Ma, Haiching; Horiuchi, Kurumi Y

    2006-07-01

    HTS with microtiter plates has been the major tool used in the pharmaceutical industry to explore chemical diversity space and to identify active compounds and pharmacophores for specific biological targets. However, HTS faces a daunting challenge regarding the fast-growing numbers of drug targets arising from genomic and proteomic research, and large chemical libraries generated from high-throughput synthesis. There is an urgent need to find new ways to profile the activity of large numbers of chemicals against hundreds of biological targets in a fast, low-cost fashion. Chemical microarray can rise to this challenge because it has the capability of identifying and evaluating small molecules as potential therapeutic reagents. During the past few years, chemical microarray technology, with different surface chemistries and activation strategies, has generated many successes in the evaluation of chemical-protein interactions, enzyme activity inhibition, target identification, signal pathway elucidation and cell-based functional analysis. The success of chemical microarray technology will provide unprecedented possibilities and capabilities for parallel functional analysis of tremendous amounts of chemical compounds.

  17. Transcriptome analysis of zebrafish embryogenesis using microarrays.

    Directory of Open Access Journals (Sweden)

    2005-08-01

    Full Text Available Zebrafish (Danio rerio is a well-recognized model for the study of vertebrate developmental genetics, yet at the same time little is known about the transcriptional events that underlie zebrafish embryogenesis. Here we have employed microarray analysis to study the temporal activity of developmentally regulated genes during zebrafish embryogenesis. Transcriptome analysis at 12 different embryonic time points covering five different developmental stages (maternal, blastula, gastrula, segmentation, and pharyngula revealed a highly dynamic transcriptional profile. Hierarchical clustering, stage-specific clustering, and algorithms to detect onset and peak of gene expression revealed clearly demarcated transcript clusters with maximum gene activity at distinct developmental stages as well as co-regulated expression of gene groups involved in dedicated functions such as organogenesis. Our study also revealed a previously unidentified cohort of genes that are transcribed prior to the mid-blastula transition, a time point earlier than when the zygotic genome was traditionally thought to become active. Here we provide, for the first time to our knowledge, a comprehensive list of developmentally regulated zebrafish genes and their expression profiles during embryogenesis, including novel information on the temporal expression of several thousand previously uncharacterized genes. The expression data generated from this study are accessible to all interested scientists from our institute resource database (http://giscompute.gis.a-star.edu.sg/~govind/zebrafish/data_download.html.

  18. Transcriptome analysis of zebrafish embryogenesis using microarrays.

    Directory of Open Access Journals (Sweden)

    Sinnakaruppan Mathavan

    2005-08-01

    Full Text Available Zebrafish (Danio rerio is a well-recognized model for the study of vertebrate developmental genetics, yet at the same time little is known about the transcriptional events that underlie zebrafish embryogenesis. Here we have employed microarray analysis to study the temporal activity of developmentally regulated genes during zebrafish embryogenesis. Transcriptome analysis at 12 different embryonic time points covering five different developmental stages (maternal, blastula, gastrula, segmentation, and pharyngula revealed a highly dynamic transcriptional profile. Hierarchical clustering, stage-specific clustering, and algorithms to detect onset and peak of gene expression revealed clearly demarcated transcript clusters with maximum gene activity at distinct developmental stages as well as co-regulated expression of gene groups involved in dedicated functions such as organogenesis. Our study also revealed a previously unidentified cohort of genes that are transcribed prior to the mid-blastula transition, a time point earlier than when the zygotic genome was traditionally thought to become active. Here we provide, for the first time to our knowledge, a comprehensive list of developmentally regulated zebrafish genes and their expression profiles during embryogenesis, including novel information on the temporal expression of several thousand previously uncharacterized genes. The expression data generated from this study are accessible to all interested scientists from our institute resource database (http://giscompute.gis.a-star.edu.sg/~govind/zebrafish/data_download.html.

  19. CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review.

    Science.gov (United States)

    Li, Haitao; Liu, Xiaowen; Li, Lin; Mu, Xiaoyi; Genov, Roman; Mason, Andrew J

    2016-12-31

    Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

  20. CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

    Science.gov (United States)

    Li, Haitao; Liu, Xiaowen; Li, Lin; Mu, Xiaoyi; Genov, Roman; Mason, Andrew J.

    2016-01-01

    Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS) instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design. PMID:28042860

  1. Failures Of CMOS Devices At Low Radiation-Dose Rates

    Science.gov (United States)

    Goben, Charles A.; Price, William E.

    1990-01-01

    Method for obtaining approximate failure-versus-dose-rate curves derived from experiments on failures of SGS 4007 complementary metal oxide/semiconductor (CMOS) integrated circuits irradiated by Co60 and Cs137 radioactive sources.

  2. CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

    Directory of Open Access Journals (Sweden)

    Haitao Li

    2016-12-01

    Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

  3. MARS: Microarray analysis, retrieval, and storage system

    Directory of Open Access Journals (Sweden)

    Scheideler Marcel

    2005-04-01

    Full Text Available Abstract Background Microarray analysis has become a widely used technique for the study of gene-expression patterns on a genomic scale. As more and more laboratories are adopting microarray technology, there is a need for powerful and easy to use microarray databases facilitating array fabrication, labeling, hybridization, and data analysis. The wealth of data generated by this high throughput approach renders adequate database and analysis tools crucial for the pursuit of insights into the transcriptomic behavior of cells. Results MARS (Microarray Analysis and Retrieval System provides a comprehensive MIAME supportive suite for storing, retrieving, and analyzing multi color microarray data. The system comprises a laboratory information management system (LIMS, a quality control management, as well as a sophisticated user management system. MARS is fully integrated into an analytical pipeline of microarray image analysis, normalization, gene expression clustering, and mapping of gene expression data onto biological pathways. The incorporation of ontologies and the use of MAGE-ML enables an export of studies stored in MARS to public repositories and other databases accepting these documents. Conclusion We have developed an integrated system tailored to serve the specific needs of microarray based research projects using a unique fusion of Web based and standalone applications connected to the latest J2EE application server technology. The presented system is freely available for academic and non-profit institutions. More information can be found at http://genome.tugraz.at.

  4. CMOS technology and current-feedback op-amps

    DEFF Research Database (Denmark)

    Bruun, Erik

    1993-01-01

    Some of the problems related to the application of CMOS technology to current-feedback operational amplifiers (CFB op-amps) are identified. Problems caused by the low device transconductance and by the absence of matching between p-channel and n-channel transistors are examined, and circuit...... poor performance compared to the bipolar designs, but CMOS has a potential for CFB op-amp design if more ingenious circuit configurations are applied...

  5. A New CMOS Current-Mode Folding Amplifier

    Directory of Open Access Journals (Sweden)

    M.A Al-Absi

    2013-09-01

    Full Text Available In this paper, a new CMOS current-mode folding amplifier is proposed. The circuit is designed using MOSFETs operating in strong inversion. The design produces a nearly ideal saw-tooth input-output characteristic which is a mandatory requirement in folding analog-to-digital converters. The functionality of the proposed circuit was confirmed using Tanner simulation tools in 0.35 µm CMOS technology. Simulation results are in excellent agreement with the theory.

  6. Design of 2.1 GHz CMOS Low Noise Amplifier

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC0.25 μm CMOS process. Intended for use in 3G, the low noise amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design.

  7. High swing CMOS realization for third generation current conveyor (CCIII)

    OpenAIRE

    Minaei, Shahram; Yıldız, Merih; Türköz, Sait; Kuntman, Hakan

    2003-01-01

    In this paper a new CMOS realization for third generation current conveyor (CCIII) is proposed. The proposed circuit provides high swing range at terminals X and Y. The circuit has low input impedances at terminals X and Y and high output impedance at terminals Z+ and Z-. The circuit has 180MHz -3dB cutoff frequency in voltage follower mode. SPICE simulation results using MIETEC 1.2 CMOS process model are given.

  8. Plasmonic Structures for CMOS Photonics and Control of Spontaneous Emission

    Science.gov (United States)

    2013-04-01

    Red, Green, Blue, Yellow, Magenta, Cyan) averaged CIE Delta-E 2000 = 16.6-19.3 after a white balance and color matrix correction is applied to the...insertion loss and also metal-insulator-metal waveguides; iii) developed a full format CMOS image sensor with plasmonic color filters; iv) explored... color filters and demonstration of imaging. v. Design of a plasMOStor plasmonic switching device, with low insertion loss, implemented in CMOS Si

  9. Delta Doping High Purity CCDs and CMOS for LSST

    Science.gov (United States)

    Blacksberg, Jordana; Nikzad, Shouleh; Hoenk, Michael; Elliott, S. Tom; Bebek, Chris; Holland, Steve; Kolbe, Bill

    2006-01-01

    A viewgraph presentation describing delta doping high purity CCD's and CMOS for LSST is shown. The topics include: 1) Overview of JPL s versatile back-surface process for CCDs and CMOS; 2) Application to SNAP and ORION missions; 3) Delta doping as a back-surface electrode for fully depleted LBNL CCDs; 4) Delta doping high purity CCDs for SNAP and ORION; 5) JPL CMP thinning process development; and 6) Antireflection coating process development.

  10. Review: DNA microarray technology and drug development

    Directory of Open Access Journals (Sweden)

    Sana Khan

    2010-01-01

    Full Text Available On the contrary to slow and non specific traditional drug discovery methods, DNA microarray technology could accelerate the identification of potential drugs for treating diseases like cancer, AIDS and provide fruitful results in the drug discovery. The technique provides efficient automation and maximum flexibility to the researchers and can test thousand compounds at a time. Scientists find DNA microarray useful in disease diagnosis, monitoring desired and adverse outcomes of therapeutic interventions, as well as, in the selection, assessment and quality con-trol of the potential drugs. In the current scenario, where new pathogens are expected every year, DNA microarray promises as an efficient technology to detect new organisms in a short time. Classification of carcinomas at the molecular level and prediction of how various types of tumor respond to different therapeutic agents can be made possible with the use of microarray analysis. Also, microarray technique can prove instrumental in personalized medicines development by providing microarray data of a patient which could be used for identifying diseases, treatment specific to individual and trailing disease prognosis. Microarray analysis could be beneficial in the area of molecular medicines for analysis of genetic variations and functions of genes in normal individuals and diseased conditions. The technique can give satisfactory results in single nucleotide polymorphism (SNP analysis and pharmacogenomics studies. The challenges that arise with the technology are high degree of variability with data obtained, frequent up gradation of methods and machines and lack of trained manpower. Despite this, DNA micro-array promises to be the next generation sequencer which could explain how organisms evolve and adapt looking at the whole genome. In a nutshell, Microarray technology makes it possible for molecular biologists to analyze simultaneously thousands of DNA samples and monitor their

  11. Diagnostic and analytical applications of protein microarrays

    DEFF Research Database (Denmark)

    Dufva, Hans Martin; Christensen, C.B.V.

    2005-01-01

    years. A genome-scale protein microarray has been demonstrated for identifying protein-protein interactions as well as for rapid identification of protein binding to a particular drug. Furthermore, protein microarrays have been shown as an efficient tool in cancer profiling, detection of bacteria...... and toxins, identification of allergen reactivity and autoantibodies. They have also demonstrated the ability to measure the absolute concentration of small molecules. Besides their capacity for parallel diagnostics, microarrays can be more sensitive than traditional methods such as enzyme...... and be amenable to automation or integrated into easy-to-use systems, such as micrototal analysis systems or point-of-care devices....

  12. Microarrays--analysis of signaling pathways.

    Science.gov (United States)

    Ramachandran, Anassuya; Black, Michael A; Shelling, Andrew N; Love, Donald R

    2008-01-01

    Microarrays provide a powerful means of analyzing the expression level of multiple transcripts in two sample populations. In this study, we have used microarray technology to identify genes that are differentially regulated in response to activin-treated ovarian cancer cells. We find a number of biologically relevant genes that are involved in regulating activin signaling and genes potentially contributing to activin-mediated growth arrest appear to be differentially regulated. Thus, microarrays are an important tool for dissecting gene expression changes in normal physiological processes and disease.

  13. DNA Microarrays in Herbal Drug Research

    Directory of Open Access Journals (Sweden)

    Preeti Chavan

    2006-01-01

    Full Text Available Natural products are gaining increased applications in drug discovery and development. Being chemically diverse they are able to modulate several targets simultaneously in a complex system. Analysis of gene expression becomes necessary for better understanding of molecular mechanisms. Conventional strategies for expression profiling are optimized for single gene analysis. DNA microarrays serve as suitable high throughput tool for simultaneous analysis of multiple genes. Major practical applicability of DNA microarrays remains in DNA mutation and polymorphism analysis. This review highlights applications of DNA microarrays in pharmacodynamics, pharmacogenomics, toxicogenomics and quality control of herbal drugs and extracts.

  14. Poly-SiGe for MEMS-above-CMOS sensors

    CERN Document Server

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  15. Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

    Science.gov (United States)

    Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2012-04-01

    In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

  16. Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

    CERN Document Server

    Kremastiotis, Iraklis; Campbell, Michael; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Kulis, Szymon; Peric, Ivan

    2017-01-01

    The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128 × 128 square pixels with 25 μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (∼ 20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ∼ 20 ns for a power consumption of 5 μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (∼ 20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using...

  17. Gamma-ray irradiation tests of CMOS sensors used in imaging techniques

    Directory of Open Access Journals (Sweden)

    Cappello Salvatore G.

    2014-01-01

    Full Text Available Technologically-enhanced electronic image sensors are used in various fields as diagnostic techniques in medicine or space applications. In the latter case the devices can be exposed to intense radiation fluxes over time which may impair the functioning of the same equipment. In this paper we report the results of gamma-ray irradiation tests on CMOS image sensors simulating the space radiation over a long time period. Gamma-ray irradiation tests were carried out by means of IGS-3 gamma irradiation facility of Palermo University, based on 60Co sources with different activities. To reduce the dose rate and realize a narrow gamma-ray beam, a lead-collimation system was purposely built. It permits to have dose rate values less than 10 mGy/s and to irradiate CMOS Image Sensors during operation. The total ionizing dose to CMOS image sensors was monitored in-situ, during irradiation, up to 1000 Gy and images were acquired every 25 Gy. At the end of the tests, the sensors continued to operate despite a background noise and some pixels were completely saturated. These effects, however, involve isolated pixels and therefore, should not affect the image quality.

  18. AN OVERVIEW OF POWER DISSIPATION AND CONTROL TECHNIQUES IN CMOS TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    N. B. ROMLI

    2015-03-01

    Full Text Available Total power dissipation in CMOS circuits has become a huge challenging in current semiconductor industry due to the leakage current and the leakage power. The exponential growth of both static and dynamic power dissipations in any CMOS process technology option has increased the cost and efficiency of the system. Technology options are used for the execution specifications and usually it depends on the optimisation and the performance constraints over the chip. This article reviews the relevant researches of the source or power dissipation, the mechanism to reduce the dynamic power dissipation as well as static power dissipation and an overview of various circuit techniques to control them. Important device parameters including voltage threshold and switching capacitance impact to the circuit performance in lowering both dynamic and static power dissipation are presented. The demand for the reduction of power dissipation in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on power dissipation and control techniques.

  19. An investigation of medical radiation detection using CMOS image sensors in smartphones

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Han Gyu [Department of Senior Healthcare, Graduate School of Eulji University, Daejeon 301-746 (Korea, Republic of); Song, Jae-Jun [Department of Otorhinolaryngology-Head & Neck Surgery, Korea University, Guro Hospital,148, Gurodong-ro, Guro-gu, Seoul 152-703 (Korea, Republic of); Lee, Kwonhee [Graduate Program in Bio-medical Science, Korea University, 2511 Sejong-ro, Sejong City 339-770 (Korea, Republic of); Nam, Ki Chang [Department of Medical Engineering, College of Medicine, Dongguk University, 32 Dongguk-ro, Goyang-si, Gyeonggi-do 410-820 (Korea, Republic of); Hong, Seong Jong; Kim, Ho Chul [Department of Radiological Science, Eulji University, 553 Yangji-dong, Sujeong-gu, Seongnam-si, Gyeonggi-do 431-713 (Korea, Republic of)

    2016-07-01

    Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

  20. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    Science.gov (United States)

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

  1. Microarray-Based Phospho-Proteomic Profiling of Complex Biological Systems

    Directory of Open Access Journals (Sweden)

    C. Rory Goodwin

    2016-04-01

    Full Text Available Protein microarray technology has been successfully used for identifying substrates of purified activated kinases. We used protein microarrays to globally interrogate the effects of PTEN and Akt activity on the phospho-kinome of in vitro and in vivo glioma models and validated results in clinical pathological specimens. Whole cell lysates extracted from tumor samples can be applied to human kinome chip microarrays to profile the global kinase phosphorylation patterns in a high-throughput manner and identify novel substrates inherent to the tumor cell and the interactions with tumor microenvironment. Our findings identify a novel microarray-based method for assessing intracellular signaling events applicable to human oncogenesis and other pathophysiologic states.

  2. CMOS microelectrode array for the monitoring of electrogenic cells.

    Science.gov (United States)

    Heer, F; Franks, W; Blau, A; Taschini, S; Ziegler, C; Hierlemann, A; Baltes, H

    2004-09-15

    Signal degradation and an array size dictated by the number of available interconnects are the two main limitations inherent to standalone microelectrode arrays (MEAs). A new biochip consisting of an array of microelectrodes with fully-integrated analog and digital circuitry realized in an industrial CMOS process addresses these issues. The device is capable of on-chip signal filtering for improved signal-to-noise ratio (SNR), on-chip analog and digital conversion, and multiplexing, thereby facilitating simultaneous stimulation and recording of electrogenic cell activity. The designed electrode pitch of 250 microm significantly limits the space available for circuitry: a repeated unit of circuitry associated with each electrode comprises a stimulation buffer and a bandpass filter for readout. The bandpass filter has corner frequencies of 100 Hz and 50 kHz, and a gain of 1000. Stimulation voltages are generated from an 8-bit digital signal and converted to an analog signal at a frequency of 120 kHz. Functionality of the read-out circuitry is demonstrated by the measurement of cardiomyocyte activity. The microelectrode is realized in a shifted design for flexibility and biocompatibility. Several microelectrode materials (platinum, platinum black and titanium nitride) have been electrically characterized. An equivalent circuit model, where each parameter represents a macroscopic physical quantity contributing to the interface impedance, has been successfully fitted to experimental results.

  3. Novel integrated CMOS pixel structures for vertex detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bieser, Fred; Chen, Yandong; Gareus, Robin; Matis, Howard S.; Oldenburg, Markus; Retiere, Fabrice; Ritter, Hans Georg; Wieman, Howard H.; Yamamoto, Eugene

    2003-10-29

    Novel CMOS active pixel structures for vertex detector applications have been designed and tested. The overriding goal of this work is to increase the signal to noise ratio of the sensors and readout circuits. A large-area native epitaxial silicon photogate was designed with the aim of increasing the charge collected per struck pixel and to reduce charge diffusion to neighboring pixels. The photogate then transfers the charge to a low capacitance readout node to maintain a high charge to voltage conversion gain. Two techniques for noise reduction are also presented. The first is a per-pixel kT/C noise reduction circuit that produces results similar to traditional correlated double sampling (CDS). It has the advantage of requiring only one read, as compared to two for CDS, and no external storage or subtraction is needed. The technique reduced input-referred temporal noise by a factor of 2.5, to 12.8 e{sup -}. Finally, a column-level active reset technique is explored that suppresses kT/C noise during pixel reset. In tests, noise was reduced by a factor of 7.6 times, to an estimated 5.1 e{sup -} input-referred noise. The technique also dramatically reduces fixed pattern (pedestal) noise, by up to a factor of 21 in our tests. The latter feature may possibly reduce pixel-by-pixel pedestal differences to levels low enough to permit sparse data scan without per-pixel offset corrections.

  4. Hierarchical information representation and efficient classification of gene expression microarray data

    OpenAIRE

    Bosio, Mattia

    2014-01-01

    In the field of computational biology, microarryas are used to measure the activity of thousands of genes at once and create a global picture of cellular function. Microarrays allow scientists to analyze expression of many genes in a single experiment quickly and eficiently. Even if microarrays are a consolidated research technology nowadays and the trends in high-throughput data analysis are shifting towards new technologies like Next Generation Sequencing (NGS), an optimum method for sample...

  5. 3D Biomaterial Microarrays for Regenerative Medicine

    DEFF Research Database (Denmark)

    Gaharwar, Akhilesh K.; Arpanaei, Ayyoob; Andresen, Thomas Lars;

    2015-01-01

    Three dimensional (3D) biomaterial microarrays hold enormous promise for regenerative medicine because of their ability to accelerate the design and fabrication of biomimetic materials. Such tissue-like biomaterials can provide an appropriate microenvironment for stimulating and controlling stem...

  6. Quality Visualization of Microarray Datasets Using Circos

    Directory of Open Access Journals (Sweden)

    Martin Koch

    2012-08-01

    Full Text Available Quality control and normalization is considered the most important step in the analysis of microarray data. At present there are various methods available for quality assessments of microarray datasets. However there seems to be no standard visualization routine, which also depicts individual microarray quality. Here we present a convenient method for visualizing the results of standard quality control tests using Circos plots. In these plots various quality measurements are drawn in a circular fashion, thus allowing for visualization of the quality and all outliers of each distinct array within a microarray dataset. The proposed method is intended for use with the Affymetrix Human Genome platform (i.e., GPL 96, GPL570 and GPL571. Circos quality measurement plots are a convenient way for the initial quality estimate of Affymetrix datasets that are stored in publicly available databases.

  7. Integration of III-V materials and Si-CMOS through double layer transfer process

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Fitzgerald, Eugene; Tan, Chuan Seng

    2015-03-01

    A method to integrate III-V compound semiconductor and SOI-CMOS on a common Si substrate is demonstrated. The SOI-CMOS layer is temporarily bonded on a Si handle wafer. Another III-V/Si substrate is then bonded to the SOI-CMOS containing handle wafer. Finally, the handle wafer is released to realize the SOI-CMOS on III-V/Si hybrid structure on a common substrate. Through this method, high temperature III-V materials growth can be completed without the presence of the temperature sensitive CMOS layer, hence damage to the CMOS layer is avoided.

  8. Multiband CMOS sensor simplify FPA design

    Science.gov (United States)

    Wang, Weng Lyang B.; Ling, Jer

    2015-10-01

    Push broom multi-band Focal Plane Array (FPA) design needs to consider optics, image sensor, electronic, mechanic as well as thermal. Conventional FPA use two or several CCD device as an image sensor. The CCD image sensor requires several high speed, high voltage and high current clock drivers as well as analog video processors to support their operation. Signal needs to digitize using external sample / hold and digitized circuit. These support circuits are bulky, consume a lot of power, must be shielded and placed in close to the CCD to minimize the introduction of unwanted noise. The CCD also needs to consider how to dissipate power. The end result is a very complicated FPA and hard to make due to more weighs and draws more power requiring complex heat transfer mechanisms. In this paper, we integrate microelectronic technology and multi-layer soft / hard Printed Circuit Board (PCB) technology to design electronic portion. Since its simplicity and integration, the optics, mechanic, structure and thermal design will become very simple. The whole FPA assembly and dis-assembly reduced to a few days. A multi-band CMOS Sensor (dedicated as C468) was used for this design. The CMOS Sensor, allow for the incorporation of clock drivers, timing generators, signal processing and digitization onto the same Integrated Circuit (IC) as the image sensor arrays. This keeps noise to a minimum while providing high functionality at reasonable power levels. The C468 is a first Multiple System-On-Chip (MSOC) IC. This device used our proprietary wafer butting technology and MSOC technology to combine five long sensor arrays into a size of 120 mm x 23.2 mm and 155 mm x 60 mm for chip and package, respectively. The device composed of one Panchromatic (PAN) and four different Multi- Spectral (MS) sensors. Due to its integration on the electronic design, a lot of room is clear for the thermal design. The optical and mechanical design is become very straight forward. The flight model FPA

  9. PATMA: parser of archival tissue microarray

    Directory of Open Access Journals (Sweden)

    Lukasz Roszkowiak

    2016-12-01

    Full Text Available Tissue microarrays are commonly used in modern pathology for cancer tissue evaluation, as it is a very potent technique. Tissue microarray slides are often scanned to perform computer-aided histopathological analysis of the tissue cores. For processing the image, splitting the whole virtual slide into images of individual cores is required. The only way to distinguish cores corresponding to specimens in the tissue microarray is through their arrangement. Unfortunately, distinguishing the correct order of cores is not a trivial task as they are not labelled directly on the slide. The main aim of this study was to create a procedure capable of automatically finding and extracting cores from archival images of the tissue microarrays. This software supports the work of scientists who want to perform further image processing on single cores. The proposed method is an efficient and fast procedure, working in fully automatic or semi-automatic mode. A total of 89% of punches were correctly extracted with automatic selection. With an addition of manual correction, it is possible to fully prepare the whole slide image for extraction in 2 min per tissue microarray. The proposed technique requires minimum skill and time to parse big array of cores from tissue microarray whole slide image into individual core images.

  10. PATMA: parser of archival tissue microarray.

    Science.gov (United States)

    Roszkowiak, Lukasz; Lopez, Carlos

    2016-01-01

    Tissue microarrays are commonly used in modern pathology for cancer tissue evaluation, as it is a very potent technique. Tissue microarray slides are often scanned to perform computer-aided histopathological analysis of the tissue cores. For processing the image, splitting the whole virtual slide into images of individual cores is required. The only way to distinguish cores corresponding to specimens in the tissue microarray is through their arrangement. Unfortunately, distinguishing the correct order of cores is not a trivial task as they are not labelled directly on the slide. The main aim of this study was to create a procedure capable of automatically finding and extracting cores from archival images of the tissue microarrays. This software supports the work of scientists who want to perform further image processing on single cores. The proposed method is an efficient and fast procedure, working in fully automatic or semi-automatic mode. A total of 89% of punches were correctly extracted with automatic selection. With an addition of manual correction, it is possible to fully prepare the whole slide image for extraction in 2 min per tissue microarray. The proposed technique requires minimum skill and time to parse big array of cores from tissue microarray whole slide image into individual core images.

  11. The Impact of Photobleaching on Microarray Analysis

    Directory of Open Access Journals (Sweden)

    Marcel von der Haar

    2015-09-01

    Full Text Available DNA-Microarrays have become a potent technology for high-throughput analysis of genetic regulation. However, the wide dynamic range of signal intensities of fluorophore-based microarrays exceeds the dynamic range of a single array scan by far, thus limiting the key benefit of microarray technology: parallelization. The implementation of multi-scan techniques represents a promising approach to overcome these limitations. These techniques are, in turn, limited by the fluorophores’ susceptibility to photobleaching when exposed to the scanner’s laser light. In this paper the photobleaching characteristics of cyanine-3 and cyanine-5 as part of solid state DNA microarrays are studied. The effects of initial fluorophore intensity as well as laser scanner dependent variables such as the photomultiplier tube’s voltage on bleaching and imaging are investigated. The resulting data is used to develop a model capable of simulating the expected degree of signal intensity reduction caused by photobleaching for each fluorophore individually, allowing for the removal of photobleaching-induced, systematic bias in multi-scan procedures. Single-scan applications also benefit as they rely on pre-scans to determine the optimal scanner settings. These findings constitute a step towards standardization of microarray experiments and analysis and may help to increase the lab-to-lab comparability of microarray experiment results.

  12. On noise in time-delay integration CMOS image sensors

    Science.gov (United States)

    Levski, Deyan; Choubey, Bhaskar

    2016-05-01

    Time delay integration sensors are of increasing interest in CMOS processes owing to their low cost, power and ability to integrate with other circuit readout blocks. This paper presents an analysis of the noise contributors in current day CMOS Time-Delay-Integration image sensors with various readout architectures. An analysis of charge versus voltage domain readout modes is presented, followed by a noise classification of the existing Analog Accumulator Readout (AAR) and Digital Accumulator Readout (DAR) schemes for TDI imaging. The analysis and classification of existing readout schemes include, pipelined charge transfer, buffered direct injection, voltage as well as current-mode analog accumulators and all-digital accumulator techniques. Time-Delay-Integration imaging modes in CMOS processes typically use an N-number of readout steps, equivalent to the number of TDI pixel stages. In CMOS TDI sensors, where voltage domain readout is used, the requirements over speed and noise of the ADC readout chain are increased due to accumulation of the dominant voltage readout and ADC noise with every stage N. Until this day, the latter is the primary reason for a leap-back of CMOS TDI sensors as compared to their CCD counterparts. Moreover, most commercial CMOS TDI implementations are still based on a charge-domain readout, mimicking a CCD-like operation mode. Thus, having a good understanding of each noise contributor in the signal chain, as well as its magnitude in different readout architectures, is vital for the design of future generation low-noise CMOS TDI image sensors based on a voltage domain readout. This paper gives a quantitative classification of all major noise sources for all popular implementations in the literature.

  13. Monolithic CMUT-on-CMOS integration for intravascular ultrasound applications.

    Science.gov (United States)

    Zahorian, Jaime; Hochman, Michael; Xu, Toby; Satir, Sarp; Gurun, Gokce; Karaman, Mustafa; Degertekin, F Levent

    2011-12-01

    One of the most important promises of capacitive micromachined ultrasonic transducer (CMUT) technology is integration with electronics. This approach is required to minimize the parasitic capacitances in the receive mode, especially in catheter-based volumetric imaging arrays, for which the elements must be small. Furthermore, optimization of the available silicon area and minimized number of connections occurs when the CMUTs are fabricated directly above the associated electronics. Here, we describe successful fabrication and performance evaluation of CMUT arrays for intravascular imaging on custom-designed CMOS receiver electronics from a commercial IC foundry. The CMUT-on-CMOS process starts with surface isolation and mechanical planarization of the CMOS electronics to reduce topography. The rest of the CMUT fabrication is achieved by modifying a low-temperature micromachining process through the addition of a single mask and developing a dry etching step to produce sloped sidewalls for simple and reliable CMUT-to-CMOS interconnection. This CMUT-to-CMOS interconnect method reduced the parasitic capacitance by a factor of 200 when compared with a standard wire-bonding method. Characterization experiments indicate that the CMUT-on-CMOS elements are uniform in frequency response and are similar to CMUTs simultaneously fabricated on standard silicon wafers without electronics integration. Ex- periments on a 1.6-mm-diameter dual-ring CMUT array with a center frequency of 15 MHz show that both the CMUTs and the integrated CMOS electronics are fully functional. The SNR measurements indicate that the performance is adequate for imaging chronic total occlusions located 1 cm from the CMUT array.

  14. Imaging combined autoimmune and infectious disease microarrays

    Science.gov (United States)

    Ewart, Tom; Raha, Sandeep; Kus, Dorothy; Tarnopolsky, Mark

    2006-09-01

    Bacterial and viral pathogens are implicated in many severe autoimmune diseases, acting through such mechanisms as molecular mimicry, and superantigen activation of T-cells. For example, Helicobacter pylori, well known cause of stomach ulcers and cancers, is also identified in ischaemic heart disease (mimicry of heat shock protein 65), autoimmune pancreatitis, systemic sclerosis, autoimmune thyroiditis (HLA DRB1*0301 allele susceptibility), and Crohn's disease. Successful antibiotic eradication of H.pylori often accompanies their remission. Yet current diagnostic devices, and test-limiting cost containment, impede recognition of the linkage, delaying both diagnosis and therapeutic intervention until the chronic debilitating stage. We designed a 15 minute low cost 39 antigen microarray assay, combining autoimmune, viral and bacterial antigens1. This enables point-of-care serodiagnosis and cost-effective narrowly targeted concurrent antibiotic and monoclonal anti-T-cell and anti-cytokine immunotherapy. Arrays of 26 pathogen and 13 autoimmune antigens with IgG and IgM dilution series were printed in triplicate on epoxysilane covalent binding slides with Teflon well masks. Sera diluted 1:20 were incubated 10 minutes, washed off, anti-IgG-Cy3 (green) and anti-IgM-Dy647 (red) were incubated for 5 minutes, washed off and the slide was read in an ArrayWoRx(e) scanning CCD imager (Applied Precision, Issaquah, WA). As a preliminary model for the combined infectious disease-autoimmune diagnostic microarray we surveyed 98 unidentified, outdated sera that were discarded after Hepatitis B antibody testing. In these, significant IgG or IgM autoantibody levels were found: dsDNA 5, ssDNA 11, Ro 2, RNP 7, SSB 4, gliadin 2, thyroglobulin 13 cases. Since control sera showed no autoantibodies, the high frequency of anti-DNA and anti-thyroglobulin antibodies found in infected sera lend increased support for linkage of infection to subsequent autoimmune disease. Expansion of the antigen

  15. Fast Hopping Frequency Generation in Digital CMOS

    CERN Document Server

    Farazian, Mohammad; Gudem, Prasad S

    2013-01-01

    Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra wideband is a key research goal in digital technology. This volume outlines a frequency plan that can generate all the required frequencies from a single fixed frequency, able to implement center frequencies with no more than two levels of SSB mixing. It recognizes the need for future synthesizers to bypass on-chip inductors and operate at low voltages to enable the increased integration and efficiency of networked appliances. The author examines in depth the architecture of the dividers that generate the necessary frequencies from a single base frequency and are capable of establishing a fractional division ratio.   Presenting the first CMOS inductorless single PLL 14-band frequency synthesizer for MB-OFDMUWB makes this volume a key addition to the literature, and with the synthesizer capable of arbitrary band-hopping in less than two nanoseconds, it operates well within the desired range on a 1.2-volt power s...

  16. A CMOS readout circuit for microstrip detectors

    Science.gov (United States)

    Nasri, B.; Fiorini, C.

    2015-03-01

    In this work, we present the design and the results of a CMOS analog channel for silicon microstrips detectors. The readout circuit was initially conceived for the outer layers of the SuperB silicon vertex tracker (SVT), but can serve more generally other microstrip-based detection systems. The strip detectors considered show a very high stray capacitance and high series resistance. Therefore, the noise optimization was the first priority design concern. A necessary compromise on the best peaking time to achieve an acceptable noise level together with efficiency and timing accuracy has been investigated. The ASIC is composed by a preamplifier, shaping amplifier and a Time over Threshold (T.o.T) block for the digitalization of the signals. The chosen shaping function is the third-order semi-Gaussian function implemented with complex poles. An inverter stage is employed in the analog channel in order to operate with signals delivered from both p and n strips. The circuit includes the possibility to select the peaking time of the shaper output from four values: 250 ns, 375 ns, 500 ns and 750 ns. In this way, the noise performances and the signal occupancy can be optimized according to the real background during the experiment. The ASIC prototype has been fabricated in the 130 nm IBM technology which is considered intrinsically radiation hard. The results of the experimental characterization of a produced prototype are satisfactorily matched with simulation.

  17. Electrothermal frequency references in standard CMOS

    CERN Document Server

    Kashmiri, S Mahdi

    2013-01-01

    This book describes an alternative method of accurate on-chip frequency generation in standard CMOS IC processes. This method exploits the thermal-diffusivity of silicon, the rate at which heat diffuses through a silicon substrate.  This is the first book describing thermal-diffusivity-based frequency references, including the complete theoretical methodology supported by practical realizations that prove the feasibility of the method.  Coverage also includes several circuit and system-level solutions for the analog electronic circuit design challenges faced.   ·         Surveys the state-of-the-art in all-silicon frequency references; ·         Examines the thermal properties of silicon as a solution for the challenge of on-chip accurate frequency generation; ·         Uses simplified modeling approaches that allow an electronics engineer easily to simulate the electrothermal elements; ·         Follows a top-down methodology in circuit design, in which system-level des...

  18. Low Power CMOS Digitally Controlled Oscillator

    Directory of Open Access Journals (Sweden)

    Sujata Pandey,

    2010-08-01

    Full Text Available Here, two new designs of CMOS digitally controlled oscillators (DCO for low power application have been proposed. First design has been implemented with one driving strength controlled delay cell and withtwo NAND gates used as inverters. The second design with one delay cell and by two NOR gates is presented. The proposed circuits have been simulated in spice with 0.35 μm (micrometer technology at supply voltage of 3.3V. The first design shows 35-40% reduction in power consumption and second design shows 37.5-41.8% power saving as compared to conventional DCO. The frequency range of first and second design varies [3.1316 - 3.1085] GHz and [3.8112 – 3.7867] GHz respectively with the variation in control word from ‘000000’ to ‘000001'. Power consumption of first and second design varies [640.3845 - 700.2977] μW and [617.6616 -6 77.3996] μW respectively.

  19. NSC 800, 8-bit CMOS microprocessor

    Science.gov (United States)

    Suszko, S. F.

    1984-01-01

    The NSC 800 is an 8-bit CMOS microprocessor manufactured by National Semiconductor Corp., Santa Clara, California. The 8-bit microprocessor chip with 40-pad pin-terminals has eight address buffers (A8-A15), eight data address -- I/O buffers (AD(sub 0)-AD(sub 7)), six interrupt controls and sixteen timing controls with a chip clock generator and an 8-bit dynamic RAM refresh circuit. The 22 internal registers have the capability of addressing 64K bytes of memory and 256 I/O devices. The chip is fabricated on N-type (100) silicon using self-aligned polysilicon gates and local oxidation process technology. The chip interconnect consists of four levels: Aluminum, Polysi 2, Polysi 1, and P(+) and N(+) diffusions. The four levels, except for contact interface, are isolated by interlevel oxide. The chip is packaged in a 40-pin dual-in-line (DIP), side brazed, hermetically sealed, ceramic package with a metal lid. The operating voltage for the device is 5 V. It is available in three operating temperature ranges: 0 to +70 C, -40 to +85 C, and -55 to +125 C. Two devices were submitted for product evaluation by F. Stott, MTS, JPL Microprocessor Specialist. The devices were pencil-marked and photographed for identification.

  20. A Method of Microarray Data Storage Using Array Data Type

    OpenAIRE

    Tsoi, Lam C.; Zheng, W Jim

    2007-01-01

    A well-designed microarray database can provide valuable information on gene expression levels. However, designing an efficient microarray database with minimum space usage is not an easy task since designers need to integrate the microarray data with the information of genes, probe annotation, and the descriptions of each microarray experiment. Developing better methods to store microarray data can greatly improve the efficiency and usefulness of such data. A new schema is proposed to store ...

  1. On the response of a europium doped phosphor-coated CMOS digital imaging detector

    Energy Technology Data Exchange (ETDEWEB)

    Seferis, I.E. [Department of Medical Physics, Faculty of Medicine, University of Patras, 26500 Patras (Greece); Michail, C.M.; Valais, I.G.; Fountos, G.P.; Kalyvas, N.I. [Department of Medical Instruments Technology, Technological Educational Institute (TEI) of Athens, Agios Spyridonos, 12210 Athens (Greece); Stromatia, F. [Department of Radiology and Nuclear Medicine, “IASO” General Hospital, Mesogion 264, 15562 Holargos (Greece); Oikonomou, G. [Department of Medical Radiological Technology, Faculty of Health and Caring Professions, Technological Educational Institute (TEI) of Athens, Agios Spyridonos, 12210 Athens (Greece); Kandarakis, I.S., E-mail: kandarakis@teiath.gr [Department of Medical Instruments Technology, Technological Educational Institute (TEI) of Athens, Agios Spyridonos, 12210 Athens (Greece); Panayiotakis, G.S. [Department of Medical Physics, Faculty of Medicine, University of Patras, 26500 Patras (Greece)

    2013-11-21

    Purpose: The purpose of the present study was to assess the information content of a high resolution active pixel CMOS imaging sensor coupled to Gd{sub 2}O{sub 2}S:Eu phosphor screens in terms of single index image quality metrics such as the information capacity (IC) and the noise equivalent passband (Ne). Methods: The CMOS sensor was coupled to two Gd{sub 2}O{sub 2}S:Eu scintillator screens with coating thicknesses of 33.3 and 65.1 mg/cm{sup 2}. IC and Ne were obtained by means of experimentally determined parameters such as the modulation transfer function (MTF), the detective quantum efficiency (DQE) and the noise equivalent quanta (NEQ). Measurements were performed using the standard IEC-RQA5 radiation beam quality (70 kVp) and a W/Rh beam quality (28 kVp). Results: It was found that the detector response function was linear for the exposure ranges under investigation. At 70 kVp, under the RQA 5 conditions IC values were found to range between 1730 and 1851 bits/mm{sup 2} and Ne values were found between 2.28 and 2.52 mm{sup −1}. At 28 kVp the corresponding IC values were found to range between 2535 and 2747 bits/mm{sup 2}, while the Ne values were found between 5.91 and 7.09 mm{sup −1}. Conclusion: IC and Ne of the red emitting phosphor/CMOS sensor combination were found with high values suggesting an acceptable imaging performance in terms of information content and sharpness, for X-ray digital imaging. -- Highlights: •Gd{sub 2}O{sub 2}S:Eu/CMOS combination has comparable image quality parameters to Gd{sub 2}O{sub 2}S:Tb/CMOS. •Information capacity was found with high values suggesting an acceptable imaging performance. •Red emitting phosphors coupled to silicon based optical sensors could be used in developing efficient imaging detectors.

  2. Chromosomal microarray versus karyotyping for prenatal diagnosis.

    Science.gov (United States)

    Wapner, Ronald J; Martin, Christa Lese; Levy, Brynn; Ballif, Blake C; Eng, Christine M; Zachary, Julia M; Savage, Melissa; Platt, Lawrence D; Saltzman, Daniel; Grobman, William A; Klugman, Susan; Scholl, Thomas; Simpson, Joe Leigh; McCall, Kimberly; Aggarwal, Vimla S; Bunke, Brian; Nahum, Odelia; Patel, Ankita; Lamb, Allen N; Thom, Elizabeth A; Beaudet, Arthur L; Ledbetter, David H; Shaffer, Lisa G; Jackson, Laird

    2012-12-06

    Chromosomal microarray analysis has emerged as a primary diagnostic tool for the evaluation of developmental delay and structural malformations in children. We aimed to evaluate the accuracy, efficacy, and incremental yield of chromosomal microarray analysis as compared with karyotyping for routine prenatal diagnosis. Samples from women undergoing prenatal diagnosis at 29 centers were sent to a central karyotyping laboratory. Each sample was split in two; standard karyotyping was performed on one portion and the other was sent to one of four laboratories for chromosomal microarray. We enrolled a total of 4406 women. Indications for prenatal diagnosis were advanced maternal age (46.6%), abnormal result on Down's syndrome screening (18.8%), structural anomalies on ultrasonography (25.2%), and other indications (9.4%). In 4340 (98.8%) of the fetal samples, microarray analysis was successful; 87.9% of samples could be used without tissue culture. Microarray analysis of the 4282 nonmosaic samples identified all the aneuploidies and unbalanced rearrangements identified on karyotyping but did not identify balanced translocations and fetal triploidy. In samples with a normal karyotype, microarray analysis revealed clinically relevant deletions or duplications in 6.0% with a structural anomaly and in 1.7% of those whose indications were advanced maternal age or positive screening results. In the context of prenatal diagnostic testing, chromosomal microarray analysis identified additional, clinically significant cytogenetic information as compared with karyotyping and was equally efficacious in identifying aneuploidies and unbalanced rearrangements but did not identify balanced translocations and triploidies. (Funded by the Eunice Kennedy Shriver National Institute of Child Health and Human Development and others; ClinicalTrials.gov number, NCT01279733.).

  3. CMOS Cell Sensors for Point-of-Care Diagnostics

    Directory of Open Access Journals (Sweden)

    Haluk Kulah

    2012-07-01

    Full Text Available The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS. CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies.

  4. CMOS Imaging Sensor Technology for Aerial Mapping Cameras

    Science.gov (United States)

    Neumann, Klaus; Welzenbach, Martin; Timm, Martin

    2016-06-01

    In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

  5. CMOS Conductometric System for Growth Monitoring and Sensing of Bacteria.

    Science.gov (United States)

    Lei Yao; Lamarche, P; Tawil, N; Khan, R; Aliakbar, A M; Hassan, M H; Chodavarapu, V P; Mandeville, R

    2011-06-01

    We present the design and implementation of a prototype complementary metal-oxide semiconductor (CMOS) conductometric integrated circuit (IC) for colony growth monitoring and specific sensing of Escherichia coli (E. coli) bacteria. The detection of E. coli is done by employing T4 bacteriophages as receptor organisms. The conductometric system operates by measuring the resistance of the test sample between the electrodes of a two-electrode electrochemical system (reference electrode and working electrode). The CMOS IC is fabricated in a TSMC 0.35-μm process and uses a current-to-frequency (I to F) conversion circuit to convert the test sample resistance into a digital output modulated in frequency. Pulsewidth control (one-shot circuit) is implemented on-chip to control the pulsewidth of the output digital signal. The novelty in the current work lies in the ability of the CMOS sensor system to monitor very low initial concentrations of bacteria (4×10(2) to 4×10(4) colony forming unit (CFU)/mL). The CMOS system is also used to record the interaction between E. coli and its specific receptor T4 bacteriophage. The prototype CMOS IC consumes an average power of 1.85 mW with a 3.3-V dc power supply.

  6. CMOS cell sensors for point-of-care diagnostics.

    Science.gov (United States)

    Adiguzel, Yekbun; Kulah, Haluk

    2012-01-01

    The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies.

  7. Figures of merit for CMOS SPADs and arrays

    Science.gov (United States)

    Bronzi, D.; Villa, F.; Bellisai, S.; Tisa, S.; Ripamonti, G.; Tosi, A.

    2013-05-01

    SPADs (Single Photon Avalanche Diodes) are emerging as most suitable photodetectors for both single-photon counting (Fluorescence Correlation Spectroscopy, Lock-in 3D Ranging) and single-photon timing (Lidar, Fluorescence Lifetime Imaging, Diffuse Optical Imaging) applications. Different complementary metal-oxide semiconductor (CMOS) implementations have been reported in literature. We present some figure of merit able to summarize the typical SPAD performances (i.e. Dark Counting Rate, Photo Detection Efficiency, afterpulsing probability, hold-off time, timing jitter) and to identify a proper metric for SPAD comparison, both as single detectors and also as imaging arrays. The goal is to define a practical framework within which it is possible to rank detectors based on their performances in specific experimental conditions, for either photon-counting or photon-timing applications. Furthermore we review the performances of some CMOS and custom-made SPADs. Results show that CMOS SPADs performances improve as the technology scales down; moreover, miniaturization of SPADs and new solutions adopted to counteract issues related with the SPAD design (electric field uniformity, premature edge breakdown, tunneling effects, defect-rich STI interface) along with advances in standard CMOS processes led to a general improvement in all fabricated photodetectors; therefore, CMOS SPADs can be suitable for very dense and cost-effective many-pixels imagers with high performances.

  8. Hybrid CMOS / Microfluidic Systems for Cell Manipulation with Dielectrophoresis

    Science.gov (United States)

    Hunt, Tom; Issadore, David; Westervelt, Robert M.

    2007-03-01

    A hybrid CMOS/microfluidic chip combines the biocompatibility of microfluidics with the built-in logic, programmability, and sensitivity of CMOS integrated circuits (ICs)^1 We have designed a CMOS IC for moving individual cells using dielectrophoresis (DEP). The IC was built in a commercial foundry and we subsequently fabricated a microfluidic chamber on the top surface. The chip consists of a 1.4 by 2.8mm array of over 32,000 individually addressable 11x11 micron pixels. An RF voltage of 5V at 10MHz can be applied to each pixel with respect to the conductive lid of the microfluidic chamber, producing a localized electric field that can trap a cell. By shifting the location of energized pixels, the array can trap and move cells along programmable paths through the microfluidic chamber. We show the design, fabrication, and testing of the hybrid chip. Bringing together the biocompatibility of microfluidics and the power of CMOS chips, hybrid CMOS / microfluidic systems are an exciting technology for biomedical research. Thanks to NSEC NSF grant PHY-0117795 and the NCI MIT-Harvard CCNE. [1] H Lee, Y Liu, RM Westervelt, D Ham, IEEE JSSC 41, 6, pp. 1471-1480, 2006

  9. Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits Project

    Data.gov (United States)

    National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

  10. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Liu, Wei; Kovalgin, Alexeij Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  11. Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells

    NARCIS (Netherlands)

    Lu, Jiwu; Liu, Wei; Kovalgin, Alexey Y.; Sun, Yun; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,

  12. 77 FR 74513 - Certain CMOS Image Sensors and Products Containing Same; Investigations: Terminations...

    Science.gov (United States)

    2012-12-14

    ... From the Federal Register Online via the Government Publishing Office INTERNATIONAL TRADE COMMISSION Certain CMOS Image Sensors and Products Containing Same; Investigations: Terminations... importation, and the sale within the United States after importation of certain CMOS image sensors and...

  13. Proximity gettering of C3H5 carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

    Science.gov (United States)

    Kurita, Kazunari; Kadono, Takeshi; Okuyama, Ryousuke; Hirose, Ryo; Onaka-Masada, Ayumi; Koga, Yoshihiro; Okuda, Hidehiko

    2016-12-01

    A new technique is described for manufacturing silicon wafers with the highest capability yet reported for gettering transition metallic, oxygen, and hydrogen impurities in CMOS image sensor fabrication. It is demonstrated that this technique can implant wafers simultaneously with carbon and hydrogen elements that form the projection range by using hydrocarbon compounds. Furthermore, these wafers can getter oxygen impurities out-diffused from the silicon substrate to the carbon cluster ion projection range during heat treatment. Therefore, they can reduce the formation of transition metals and oxygen-related defects in the device active regions and improve electrical performance characteristics, such as dark current and image lag characteristics. The new technique enables the formation of high-gettering-capability sinks for transition metals, oxygen, and hydrogen impurities under device active regions of CMOS image sensors. The wafers formed by this technique have the potential to significantly reduce dark current in advanced CMOS image sensors.

  14. Fecal source tracking in water using a mitochondrial DNA microarray.

    Science.gov (United States)

    Vuong, Nguyet-Minh; Villemur, Richard; Payment, Pierre; Brousseau, Roland; Topp, Edward; Masson, Luke

    2013-01-01

    A mitochondrial-based microarray (mitoArray) was developed for rapid identification of the presence of 28 animals and one family (cervidae) potentially implicated in fecal pollution in mixed activity watersheds. Oligonucleotide probes for genus or subfamily-level identification were targeted within the 12S rRNA - Val tRNA - 16S rRNA region in the mitochondrial genome. This region, called MI-50, was selected based on three criteria: 1) the ability to be amplified by universal primers 2) these universal primer sequences are present in most commercial and domestic animals of interest in source tracking, and 3) that sufficient sequence variation exists within this region to meet the minimal requirements for microarray probe discrimination. To quantify the overall level of mitochondrial DNA (mtDNA) in samples, a quantitative-PCR (Q-PCR) universal primer pair was also developed. Probe validation was performed using DNA extracted from animal tissues and, for many cases, animal-specific fecal samples. To reduce the amplification of potentially interfering fish mtDNA sequences during the MI-50 enrichment step, a clamping PCR method was designed using a fish-specific peptide nucleic acid. DNA extracted from 19 water samples were subjected to both array and independent PCR analyses. Our results confirm that the mitochondrial microarray approach method could accurately detect the dominant animals present in water samples emphasizing the potential for this methodology in the parallel scanning of a large variety of animals normally monitored in fecal source tracking.

  15. Universal ligation-detection-reaction microarray applied for compost microbes

    Directory of Open Access Journals (Sweden)

    Romantschuk Martin

    2008-12-01

    Full Text Available Abstract Background Composting is one of the methods utilised in recycling organic communal waste. The composting process is dependent on aerobic microbial activity and proceeds through a succession of different phases each dominated by certain microorganisms. In this study, a ligation-detection-reaction (LDR based microarray method was adapted for species-level detection of compost microbes characteristic of each stage of the composting process. LDR utilises the specificity of the ligase enzyme to covalently join two adjacently hybridised probes. A zip-oligo is attached to the 3'-end of one probe and fluorescent label to the 5'-end of the other probe. Upon ligation, the probes are combined in the same molecule and can be detected in a specific location on a universal microarray with complementary zip-oligos enabling equivalent hybridisation conditions for all probes. The method was applied to samples from Nordic composting facilities after testing and optimisation with fungal pure cultures and environmental clones. Results Probes targeted for fungi were able to detect 0.1 fmol of target ribosomal PCR product in an artificial reaction mixture containing 100 ng competing fungal ribosomal internal transcribed spacer (ITS area or herring sperm DNA. The detection level was therefore approximately 0.04% of total DNA. Clone libraries were constructed from eight compost samples. The LDR microarray results were in concordance with the clone library sequencing results. In addition a control probe was used to monitor the per-spot hybridisation efficiency on the array. Conclusion This study demonstrates that the LDR microarray method is capable of sensitive and accurate species-level detection from a complex microbial community. The method can detect key species from compost samples, making it a basis for a tool for compost process monitoring in industrial facilities.

  16. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  17. Review: DNA Microarray Technology and Drug Development

    Directory of Open Access Journals (Sweden)

    Sushma Drabu

    2010-01-01

    Full Text Available

    On the contrary to slow and non specific traditional drug discovery methods, DNA microarray technology could
    accelerate the identification of potential drugs for treating diseases like cancer, AIDS and provide fruitful results in
    the drug discovery. The technique provides efficient automation and maximum flexibility to the researchers and
    can test thousand compounds at a time. Scientists find DNA microarray useful in disease diagnosis, monitoring
    desired and adverse outcomes of therapeutic interventions, as well as, in the selection, assessment and quality control
    of the potential drugs. In the current scenario, where new pathogens are expected every year, DNA microarray
    promises as an efficient technology to detect new organisms in a short time. Classification of carcinomas at the
    molecular level and prediction of how various types of tumor respond to different therapeutic agents can be made
    possible with the use of microarray analysis. Also, microarray technique can prove instrumental in personalized
    medicines development by providing microarray data of a patient which could be used for identifying diseases,
    treatment specific to individual and trailing disease prognosis. Microarray analysis could be beneficial in the area
    of molecular medicines for analysis of genetic variations and functions of genes in normal individuals and diseased
    conditions. The technique can give satisfactory results in single nucleotide polymorphism (SNP analysis and
    pharmacogenomics studies. The challenges that arise with the technology are high degree of variability with data
    obtained, frequent up gradation of methods and machines and lack of trained manpower. Despite this, DNA microarray
    promises to be the next generation sequencer which could explain how organisms evolve and adapt looking
    at the whole

  18. Radiation tolerant back biased CMOS VLSI

    Science.gov (United States)

    Maki, Gary K. (Inventor); Gambles, Jody W. (Inventor); Hass, Kenneth J. (Inventor)

    2003-01-01

    A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

  19. Operation and biasing for single device equivalent to CMOS

    Science.gov (United States)

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  20. High-speed polysilicon CMOS photodetector for telecom and datacom

    Science.gov (United States)

    Atabaki, Amir H.; Meng, Huaiyu; Alloatti, Luca; Mehta, Karan K.; Ram, Rajeev J.

    2016-09-01

    Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow ("zero-change" CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias.

  1. CMOS biosensors for in vitro diagnosis - transducing mechanisms and applications.

    Science.gov (United States)

    Lei, Ka-Meng; Mak, Pui-In; Law, Man-Kay; Martins, Rui P

    2016-09-21

    Complementary metal oxide semiconductor (CMOS) technology enables low-cost and large-scale integration of transistors and physical sensing materials on tiny chips (e.g., key functions of biosensors: transducing and signal processing. Recent CMOS biosensors unified different transducing mechanisms (impedance, fluorescence, and nuclear spin) and readout electronics have demonstrated competitive sensitivity for in vitro diagnosis, such as detection of DNA (down to 10 aM), protein (down to 10 fM), or bacteria/cells (single cell). Herein, we detail the recent advances in CMOS biosensors, centering on their key principles, requisites, and applications. Together, these may contribute to the advancement of our healthcare system, which should be decentralized by broadly utilizing point-of-care diagnostic tools.

  2. Piezoresistive Sensors Development Using Monolithic CMOS MEMS Technology

    Directory of Open Access Journals (Sweden)

    A. Chaehoi

    2011-04-01

    Full Text Available This paper presents the development of a monolithic CMOS-MEMS platform under the iDesign and SemeMEMS projects with the aim of jointly providing an open access “one-stop-shop” design and prototyping facility for integrated CMOS-MEMS. This work addresses the implementation of a 3-axis accelerometer and a pressure sensor using Semefab’s in-house 2-poly 1-metal CMOS process on a 380/4/15 μm SOI wafer; the membrane and the proof mass being micromachined using double-sided Deep Reactive Ion Etching (DRIE. This monolithic approach promises, in high volume production and using low complexity processes, a dramatic cost reduction over hybrid sensors. Furthermore, the embedded signal conditioning and the low-noise level in polysilicon gauges enables high performance to be achieved by implementing dedicated on-chip amplification and filtering circuitry.

  3. Silicon pixel detector prototyping in SOI CMOS technology

    Science.gov (United States)

    Dasgupta, Roma; Bugiel, Szymon; Idzik, Marek; Kapusta, Piotr; Kucewicz, Wojciech; Turala, Michal

    2016-12-01

    The Silicon-On-Insulator (SOI) CMOS is one of the most advanced and promising technology for monolithic pixel detectors design. The insulator layer that is implemented inside the silicon crystal allows to integrate sensors matrix and readout electronic on a single wafer. Moreover, the separation of electronic and substrate increases also the SOI circuits performance. The parasitic capacitances to substrate are significantly reduced, so the electronic systems are faster and consume much less power. The authors of this presentation are the members of international SOIPIX collaboration, that is developing SOI pixel detectors in 200 nm Lapis Fully-Depleted, Low-Leakage SOI CMOS. This work shows a set of advantages of SOI technology and presents possibilities for pixel detector design SOI CMOS. In particular, the preliminary results of a Cracow chip are presented.

  4. Design of Low Voltage Low Power CMOS OP-AMP

    Directory of Open Access Journals (Sweden)

    Shahid Khan,

    2014-11-01

    Full Text Available Operational amplifiers are an integral part of many analog and mixed signal systems. As the demand for mixed mode integrated circuits increases, the design of analog circuits such as operational amplifiers in CMOS technology becomes more critical. This paper presents a two stage CMOS operational amplifier, which operates at ±1.8V power supply using TSMC 0.18um CMOS technology. The OP-AMP designed exhibit unity gain frequency of 12.6 MHz, and gain of 55.5db with 300uw power dissipation. The gain margin and phase margin of OP-AMP is 45˚ and 60˚ respectively. Design and simulation has been carried out in P Spice tool.

  5. Electroplated solenoid-type inductors for CMOS rf CO

    Science.gov (United States)

    Nam, Chul; Choi, Wonseo; Chun, KukJin

    2000-10-01

    A Solenoid-type Inductors have been realized using electroplating technique mainly used for 2 Ghz band CMOS RF VCO applications. The integrated spiral inductor has low Q factor due to substrate loss and skin effects. And it also occupies large area compared to solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower substrate loss and other interference with integrated passive components. In this research, Solenoid-type inductors are simulated and modeled as equivalent circuit for CMOS RF VCO based on extracted S- parameters. The electroplated solenoid-type inductors are fabricated on both a standard silicon substrate and glass substrate by thick PR photolithography and copper electroplating. The achieved inductance varies range from 1 nH to 5 nH, and maximum Q factor over 10. The inductors are scheduled to be integrated on CMOS RF VCO with RF MEMS capacitor for future.

  6. Study of CMOS integrated signal processing circuit in capacitive sensors

    Institute of Scientific and Technical Information of China (English)

    CAO Yi-jiang; YU Xiang; WANG Lei

    2007-01-01

    A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output voltage's frequency. The whole circuit is designed with 1.5 μm P-well CMOS process and simulated by PSpice software.Output frequency varies from 261.05 kHz to 47.93 kHz if capacitance varies in the range of 1PF~15PF. And the variation of frequency can be easily detected using counter or SCU.

  7. First experimental results on CMOS Integrated Nickel Electroplated Resonators

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Hansen, Ole

    2004-01-01

    This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electri......This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation...... of the electrical parameters of n-channel and p-channel transistors. The magnetron sputtering technique is shown to be compatible with standard CMOS electronics without any restriction of the metal types and annealing requirements....

  8. Design of CMOS logic gates for TID radiation

    Science.gov (United States)

    Attia, John Okyere; Sasabo, Maria L.

    1993-01-01

    The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.

  9. Equalizing Si photodetectors fabricated in standard CMOS processes

    Science.gov (United States)

    Guerrero, E.; Aguirre, J.; Sánchez-Azqueta, C.; Royo, G.; Gimeno, C.; Celma, S.

    2017-05-01

    This work presents a new continuous-time equalization approach to overcome the limited bandwidth of integrated CMOS photodetectors. It is based on a split-path topology that features completely decoupled controls for boosting and gain; this capability allows a better tuning of the equalizer in comparison with other architectures based on the degenerated differential pair, which is particularly helpful to achieve a proper calibration of the system. The equalizer is intended to enhance the bandwidth of CMOS standard n-well/p-bulk differential photodiodes (DPDs), which falls below 10MHz representing a bottleneck in fully integrated optoelectronic interfaces to fulfill the low-cost requirements of modern smart sensors. The proposed equalizer has been simulated in a 65nm CMOS process and biased with a single supply voltage of 1V, where the bandwidth of the DPD has been increased up to 3 GHz.

  10. Low-voltage CMOS operational amplifiers theory, design and implementation

    CERN Document Server

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  11. Radiation imaging with a new scintillator and a CMOS camera

    Science.gov (United States)

    Kurosawa, S.; Shoji, Y.; Pejchal, J.; Yokota, Y.; Yoshikawa, A.

    2014-07-01

    A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga)5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 ± 0.4 μm and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.

  12. CMOS reliability issues for emerging cryogenic Lunar electronics applications

    Science.gov (United States)

    Chen, Tianbing; Zhu, Chendong; Najafizadeh, Laleh; Jun, Bongim; Ahmed, Adnan; Diestelhorst, Ryan; Espinel, Gustavo; Cressler, John D.

    2006-06-01

    We investigate the reliability issues associated with the application of CMOS devices contained within an advanced SiGe HBT BiCMOS technology to emerging cryogenic space electronics (e.g., down to 43 K, for Lunar missions). Reduced temperature operation improves CMOS device performance (e.g., transconductance, carrier mobility, subthreshold swing, and output current drive), as expected. However, operation at cryogenic temperatures also causes serious device reliability concerns, since it aggravates hot-carrier effects, effectively decreasing the inferred device lifetime significantly, especially at short gate lengths. In the paper, hot-carrier effects are demonstrated to be a stronger function of the device gate length than the temperature, suggesting that significant trade-offs between the gate length and the operational temperature must be made in order to ensure safe and reliable operation over typical projected mission lifetimes in these hostile environments.

  13. Architectures for Low-noise CMOS Electronic Imaging

    Science.gov (United States)

    Kawahito, Shoji

    This chapter discusses various types of signal readout architectures for CMOS image sensors, implementing ultra-low-noise conversion of photo-generated charge packets into digital output values. It is based on a detailed analysis of the different noise sources in a CMOS imager, the noise responses of column noise cancelling circuits using correlated double sampling (CDS) and correlated multiple sampling (CMS) techniques and a noiseless signal readout technique using a precise digitizer. Finally, a practical example for the design of a CMOS image sensor with single-photon resolution is presented, and the technological requirements for meeting the condition for room-temperature readout noise of significantly less than 1 electron are discussed.

  14. Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.

    Science.gov (United States)

    Garlapati, Suresh Kumar; Baby, Tessy Theres; Dehm, Simone; Hammad, Mohammed; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2015-08-05

    Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. 77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

    Science.gov (United States)

    2012-05-07

    ... COMMISSION Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint... complaint entitled Certain CMOS Image Sensors and Products Containing Same, DN 2895; the Commission is... importation of certain CMOS image sensors and products containing same. The complaint names as...

  16. Targeted Deposition of Antibodies on a Multiplex CMOS Microarray and Optimization of a Sensitive Immunoassay Using Electrochemical Detection

    Science.gov (United States)

    2010-03-19

    immunoassay for staphylococcal enterotoxin B (SEB) is influenced by the application of different voltages or currents and the application time. The...influenced the sensitivity and specificity of an immunoassay for staphylococcal enterotoxin B (SEB) as Figure 1. Photomicrograph of a single electrode. The...order of magnitude better than that observed using a standard microtiter plate ELISA with the same Ab reagents. Staphylococcal enterotoxin B is a

  17. Posttranslational Modification Assays on Functional Protein Microarrays.

    Science.gov (United States)

    Neiswinger, Johnathan; Uzoma, Ijeoma; Cox, Eric; Rho, HeeSool; Jeong, Jun Seop; Zhu, Heng

    2016-10-03

    Protein microarray technology provides a straightforward yet powerful strategy for identifying substrates of posttranslational modifications (PTMs) and studying the specificity of the enzymes that catalyze these reactions. Protein microarray assays can be designed for individual enzymes or a mixture to establish connections between enzymes and substrates. Assays for four well-known PTMs-phosphorylation, acetylation, ubiquitylation, and SUMOylation-have been developed and are described here for use on functional protein microarrays. Phosphorylation and acetylation require a single enzyme and are easily adapted for use on an array. The ubiquitylation and SUMOylation cascades are very similar, and the combination of the E1, E2, and E3 enzymes plus ubiquitin or SUMO protein and ATP is sufficient for in vitro modification of many substrates.

  18. An analog CMOS chip set for neural networks with arbitrary topologies

    DEFF Research Database (Denmark)

    Lansner, John; Lehmann, Torsten

    1993-01-01

    An analog CMOS chip set for implementations of artificial neural networks (ANNs) has been fabricated and tested. The chip set consists of two cascadable chips: a neuron chip and a synapse chip. Neurons on the neuron chips can be interconnected at random via synapses on the synapse chips thus...... implementing an ANN with arbitrary topology. The neuron test chip contains an array of 4 neurons with well defined hyperbolic tangent activation functions which is implemented by using parasitic lateral bipolar transistors. The synapse test chip is a cascadable 4×4 matrix-vector multiplier with variable, 10-b...

  19. Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting.

    Science.gov (United States)

    Guidash, Michael; Ma, Jiaju; Vogelsang, Thomas; Endsley, Jay

    2016-04-09

    Recent activity in photon counting CMOS image sensors (CIS) has been directed to reduction of read noise. Many approaches and methods have been reported. This work is focused on providing sub 1 e(-) read noise by design and operation of the binary and small signal readout of photon counting CIS. Compensation of transfer gate feed-through was used to provide substantially reduced CDS time and source follower (SF) bandwidth. SF read noise was reduced by a factor of 3 with this method. This method can be applied broadly to CIS devices to reduce the read noise for small signals to enable use as a photon counting sensor.

  20. CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

    Science.gov (United States)

    Hirono, Toko; Barbero, Marlon; Breugnon, Patrick; Godiot, Stephanie; Gonella, Laura; Hemperek, Tomasz; Hügging, Fabian; Krüger, Hans; Liu, Jian; Pangaud, Patrick; Peric, Ivan; Pohl, David-Leon; Rozanov, Alexandre; Rymaszewski, Piotr; Wang, Anqing; Wermes, Norbert

    2016-09-01

    A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.

  1. MuPix7 - A fast monolithic HV-CMOS pixel chip for Mu3e

    CERN Document Server

    Augustin, H; Dittmeier, S; Hammerich, J; Hartenstein, U; Huang, Q; Huth, L; Immig, D; Kozlinskiy, A; Aeschbacher, F Meier; Perić, I; Perrevoort, A -K; Schöning, A; Shrestha, S; Sorokin, I; Tyukin, A; Bruch, D vom; Wauters, F; Wiedner, D; Zimmermann, M

    2016-01-01

    The MuPix7 chip is a monolithic HV-CMOS pixel chip, thinned down to 50 \\mu m. It provides continuous self-triggered, non-shuttered readout at rates up to 30 Mhits/chip of 3x3 mm^2 active area and a pixel size of 103x80 \\mu m^2. The hit efficiency depends on the chosen working point. Settings with a power consumption of 300 mW/cm^2 allow for a hit efficiency >99.5%. A time resolution of 14.2 ns (Gaussian sigma) is achieved. Latest results from 2016 test beam campaigns are shown.

  2. CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko, E-mail: thirono@uni-bonn.de [Physikalisches Institute der Universität Bonn, Bonn (Germany); Barbero, Marlon; Breugnon, Patrick; Godiot, Stephanie [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Gonella, Laura; Hemperek, Tomasz; Hügging, Fabian; Krüger, Hans [Physikalisches Institute der Universität Bonn, Bonn (Germany); Liu, Jian; Pangaud, Patrick [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Peric, Ivan [IPE, Karlsruher Institut für Technologie, Karlsruhe (Germany); Pohl, David-Leon [Physikalisches Institute der Universität Bonn, Bonn (Germany); Rozanov, Alexandre [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Rymaszewski, Piotr [Physikalisches Institute der Universität Bonn, Bonn (Germany); Wang, Anqing [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Wermes, Norbert [Physikalisches Institute der Universität Bonn, Bonn (Germany)

    2016-09-21

    A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.

  3. CMOS-compatible photonic devices for single-photon generation

    Directory of Open Access Journals (Sweden)

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  4. A 65 nm CMOS LNA for Bolometer Application

    Science.gov (United States)

    Huang, Tom Nan; Boon, Chirn Chye; Zhu, Forest Xi; Yi, Xiang; He, Xiaofeng; Feng, Guangyin; Lim, Wei Meng; Liu, Bei

    2016-04-01

    Modern bolometers generally consist of large-scale arrays of detectors. Implemented in conventional technologies, such bolometer arrays suffer from integrability and productivity issues. Recently, the development of CMOS technologies has presented an opportunity for the massive production of high-performance and highly integrated bolometers. This paper presents a 65-nm CMOS LNA designed for a millimeter-wave bolometer's pre-amplification stage. By properly applying some positive feedback, the noise figure of the proposed LNA is minimized at under 6 dB and the bandwidth is extended to 30 GHz.

  5. A Voltage Controlled Oscillator using Ring Structure in CMOS Technology

    Directory of Open Access Journals (Sweden)

    Mrs. Devendra Rani

    2012-06-01

    Full Text Available Voltage-Controlled Ring Oscillators are crucial components in many wireless communication systems. The goal of this project is to design a high speed and lower power consumption, a voltage controlled oscillator (VCO, based on ring oscillators in 250nm CMOS technology, which provides a frequency of 2.4GHz. This CMOS based VCO is used for high speed wireless communication applications. A design of VCO includes delay cell, bias circuitry, and tuning circuitry using Tanner 13.0v software.

  6. Modifications in CMOS Dynamic Logic Style: A Review Paper

    Science.gov (United States)

    Meher, Preetisudha; Mahapatra, Kamalakanta

    2015-12-01

    Dynamic logic style is used in high performance circuit design because of its fast speed and less transistors requirement as compared to CMOS logic style. But it is not widely accepted for all types of circuit implementations due to its less noise tolerance and charge sharing problems. A small noise at the input of the dynamic logic can change the desired output. Domino logic uses one static CMOS inverter at the output of dynamic node which is more noise immune and consuming very less power as compared to other proposed circuit. In this paper, an overview and classification of these techniques are first presented and then compared according to their performance.

  7. Statistical circuit design for yield improvement in CMOS circuits

    Science.gov (United States)

    Kamath, H. J.; Purviance, J. E.; Whitaker, S. R.

    1990-01-01

    This paper addresses the statistical design of CMOS integrated circuits for improved parametric yield. The work uses the Monte Carlo technique of circuit simulation to obtain an unbiased estimation of the yield. A simple graphical analysis tool, the yield factor histogram, is presented. The yield factor histograms are generated by a new computer program called SPICENTER. Using the yield factor histograms, the most sensitive circuit parameters are noted, and their nominal values are changed to improve the yield. Two basic CMOS example circuits, one analog and one digital, are chosen and their designs are 'centered' to illustrate the use of the yield factor histograms for statistical circuit design.

  8. High-Speed Low Power Design in CMOS

    DEFF Research Database (Denmark)

    Ghani, Arfan; Usmani, S. H.; Stassen, Flemming

    2004-01-01

    Static CMOS design displays benefits such as low power consumption, dominated by dynamic power consumption. In contrast, MOS Current Mode Logic (MCML) displays static rather than dynamic power consumption. High-speed low-power design is one of the many application areas in VLSI that require...... the theorethical description of MOS Current Mode Logic, and it is found that it is more difficult to model and simulate the circuit with compare to standard CMOS because of the differential inputs and low voltage swing....

  9. CMOS sigma-delta converters practical design guide

    CERN Document Server

    De la Rosa, Jose M

    2013-01-01

    A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

  10. Single-chip RF communications systems in CMOS

    DEFF Research Database (Denmark)

    Olesen, Ole

    1997-01-01

    The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

  11. CMOS voltage references an analytical and practical perspective

    CERN Document Server

    Kok, Chi-Wah

    2013-01-01

    A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

  12. CMOS-compatible photonic devices for single-photon generation

    Science.gov (United States)

    Xiong, Chunle; Bell, Bryn; Eggleton, Benjamin J.

    2016-09-01

    Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal-oxide-semiconductor (CMOS)-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon) and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  13. Linear CMOS RF power amplifiers a complete design workflow

    CERN Document Server

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  14. Discovering biological progression underlying microarray samples.

    Directory of Open Access Journals (Sweden)

    Peng Qiu

    2011-04-01

    Full Text Available In biological systems that undergo processes such as differentiation, a clear concept of progression exists. We present a novel computational approach, called Sample Progression Discovery (SPD, to discover patterns of biological progression underlying microarray gene expression data. SPD assumes that individual samples of a microarray dataset are related by an unknown biological process (i.e., differentiation, development, cell cycle, disease progression, and that each sample represents one unknown point along the progression of that process. SPD aims to organize the samples in a manner that reveals the underlying progression and to simultaneously identify subsets of genes that are responsible for that progression. We demonstrate the performance of SPD on a variety of microarray datasets that were generated by sampling a biological process at different points along its progression, without providing SPD any information of the underlying process. When applied to a cell cycle time series microarray dataset, SPD was not provided any prior knowledge of samples' time order or of which genes are cell-cycle regulated, yet SPD recovered the correct time order and identified many genes that have been associated with the cell cycle. When applied to B-cell differentiation data, SPD recovered the correct order of stages of normal B-cell differentiation and the linkage between preB-ALL tumor cells with their cell origin preB. When applied to mouse embryonic stem cell differentiation data, SPD uncovered a landscape of ESC differentiation into various lineages and genes that represent both generic and lineage specific processes. When applied to a prostate cancer microarray dataset, SPD identified gene modules that reflect a progression consistent with disease stages. SPD may be best viewed as a novel tool for synthesizing biological hypotheses because it provides a likely biological progression underlying a microarray dataset and, perhaps more importantly, the

  15. Hybridization and Selective Release of DNA Microarrays

    Energy Technology Data Exchange (ETDEWEB)

    Beer, N R; Baker, B; Piggott, T; Maberry, S; Hara, C M; DeOtte, J; Benett, W; Mukerjee, E; Dzenitis, J; Wheeler, E K

    2011-11-29

    DNA microarrays contain sequence specific probes arrayed in distinct spots numbering from 10,000 to over 1,000,000, depending on the platform. This tremendous degree of multiplexing gives microarrays great potential for environmental background sampling, broad-spectrum clinical monitoring, and continuous biological threat detection. In practice, their use in these applications is not common due to limited information content, long processing times, and high cost. The work focused on characterizing the phenomena of microarray hybridization and selective release that will allow these limitations to be addressed. This will revolutionize the ways that microarrays can be used for LLNL's Global Security missions. The goals of this project were two-fold: automated faster hybridizations and selective release of hybridized features. The first study area involves hybridization kinetics and mass-transfer effects. the standard hybridization protocol uses an overnight incubation to achieve the best possible signal for any sample type, as well as for convenience in manual processing. There is potential to significantly shorten this time based on better understanding and control of the rate-limiting processes and knowledge of the progress of the hybridization. In the hybridization work, a custom microarray flow cell was used to manipulate the chemical and thermal environment of the array and autonomously image the changes over time during hybridization. The second study area is selective release. Microarrays easily generate hybridization patterns and signatures, but there is still an unmet need for methodologies enabling rapid and selective analysis of these patterns and signatures. Detailed analysis of individual spots by subsequent sequencing could potentially yield significant information for rapidly mutating and emerging (or deliberately engineered) pathogens. In the selective release work, optical energy deposition with coherent light quickly provides the thermal energy

  16. Prominent feature selection of microarray data

    Institute of Scientific and Technical Information of China (English)

    Yihui Liu

    2009-01-01

    For wavelet transform, a set of orthogonal wavelet basis aims to detect the localized changing features contained in microarray data. In this research, we investigate the performance of the selected wavelet features based on wavelet detail coefficients at the second level and the third level. The genetic algorithm is performed to optimize wavelet detail coefficients to select the best discriminant features. Exper-iments are carried out on four microarray datasets to evaluate the performance of classification. Experimental results prove that wavelet features optimized from detail coefficients efficiently characterize the differences between normal tissues and cancer tissues.

  17. Diagnostic and analytical applications of protein microarrays

    DEFF Research Database (Denmark)

    Dufva, Hans Martin; Christensen, C.B.V.

    2005-01-01

    -linked immunosorbent assay, mass spectrometry or high-performance liquid chromatography-based assays. However, for protein and antibody arrays to be successfully introduced into diagnostics, the biochemistry of immunomicroarrays must be better characterized and simplified, they must be validated in a clinical setting...... years. A genome-scale protein microarray has been demonstrated for identifying protein-protein interactions as well as for rapid identification of protein binding to a particular drug. Furthermore, protein microarrays have been shown as an efficient tool in cancer profiling, detection of bacteria...

  18. Microarrays - A Key Technology for Glycobiology

    Science.gov (United States)

    Liu, Yan; Feizi, Ten

    Carbohydrate chains of glycoproteins , glycolipids , and proteoglycans can mediate processes of biological and medical importance through their interactions with complementary proteins. The unraveling of these interactions is a priority therefore in biomedical sciences. Carbohydrate microarray technology is a new development at the frontiers of glycomics that has revolutionized the study of carbohydrate-protein interactions and the elucidation of their specificities in endogenous biological processes, immune defense mechanisms, and microbe-host interactions. In this chapter we briefly touch upon the principles of numerous platforms since the introduction of carbohydrate microarrays in 2002, and we highlight platforms that are beyond proof-of-concept, and have provided new biological information.

  19. Development and application of a microarray meter tool to optimize microarray experiments

    Directory of Open Access Journals (Sweden)

    Rouse Richard JD

    2008-07-01

    Full Text Available Abstract Background Successful microarray experimentation requires a complex interplay between the slide chemistry, the printing pins, the nucleic acid probes and targets, and the hybridization milieu. Optimization of these parameters and a careful evaluation of emerging slide chemistries are a prerequisite to any large scale array fabrication effort. We have developed a 'microarray meter' tool which assesses the inherent variations associated with microarray measurement prior to embarking on large scale projects. Findings The microarray meter consists of nucleic acid targets (reference and dynamic range control and probe components. Different plate designs containing identical probe material were formulated to accommodate different robotic and pin designs. We examined the variability in probe quality and quantity (as judged by the amount of DNA printed and remaining post-hybridization using three robots equipped with capillary printing pins. Discussion The generation of microarray data with minimal variation requires consistent quality control of the (DNA microarray manufacturing and experimental processes. Spot reproducibility is a measure primarily of the variations associated with printing. The microarray meter assesses array quality by measuring the DNA content for every feature. It provides a post-hybridization analysis of array quality by scoring probe performance using three metrics, a a measure of variability in the signal intensities, b a measure of the signal dynamic range and c a measure of variability of the spot morphologies.

  20. Identification of candidate genes in osteoporosis by integrated microarray analysis

    Science.gov (United States)

    Li, J. J.; Wang, B. Q.; Yang, Y.; Li, D.

    2016-01-01

    Objectives In order to screen the altered gene expression profile in peripheral blood mononuclear cells of patients with osteoporosis, we performed an integrated analysis of the online microarray studies of osteoporosis. Methods We searched the Gene Expression Omnibus (GEO) database for microarray studies of peripheral blood mononuclear cells in patients with osteoporosis. Subsequently, we integrated gene expression data sets from multiple microarray studies to obtain differentially expressed genes (DEGs) between patients with osteoporosis and normal controls. Gene function analysis was performed to uncover the functions of identified DEGs. Results A total of three microarray studies were selected for integrated analysis. In all, 1125 genes were found to be significantly differentially expressed between osteoporosis patients and normal controls, with 373 upregulated and 752 downregulated genes. Positive regulation of the cellular amino metabolic process (gene ontology (GO): 0033240, false discovery rate (FDR) = 1.00E + 00) was significantly enriched under the GO category for biological processes, while for molecular functions, flavin adenine dinucleotide binding (GO: 0050660, FDR = 3.66E-01) and androgen receptor binding (GO: 0050681, FDR = 6.35E-01) were significantly enriched. DEGs were enriched in many osteoporosis-related signalling pathways, including those of mitogen-activated protein kinase (MAPK) and calcium. Protein-protein interaction (PPI) network analysis showed that the significant hub proteins contained ubiquitin specific peptidase 9, X-linked (Degree = 99), ubiquitin specific peptidase 19 (Degree = 57) and ubiquitin conjugating enzyme E2 B (Degree = 57). Conclusion Analysis of gene function of identified differentially expressed genes may expand our understanding of fundamental mechanisms leading to osteoporosis. Moreover, significantly enriched pathways, such as MAPK and calcium, may involve in osteoporosis through osteoblastic differentiation and

  1. Microarray Я US: a user-friendly graphical interface to Bioconductor tools that enables accurate microarray data analysis and expedites comprehensive functional analysis of microarray results

    Directory of Open Access Journals (Sweden)

    Dai Yilin

    2012-06-01

    Full Text Available Abstract Background Microarray data analysis presents a significant challenge to researchers who are unable to use the powerful Bioconductor and its numerous tools due to their lack of knowledge of R language. Among the few existing software programs that offer a graphic user interface to Bioconductor packages, none have implemented a comprehensive strategy to address the accuracy and reliability issue of microarray data analysis due to the well known probe design problems associated with many widely used microarray chips. There is also a lack of tools that would expedite the functional analysis of microarray results. Findings We present Microarray Я US, an R-based graphical user interface that implements over a dozen popular Bioconductor packages to offer researchers a streamlined workflow for routine differential microarray expression data analysis without the need to learn R language. In order to enable a more accurate analysis and interpretation of microarray data, we incorporated the latest custom probe re-definition and re-annotation for Affymetrix and Illumina chips. A versatile microarray results output utility tool was also implemented for easy and fast generation of input files for over 20 of the most widely used functional analysis software programs. Conclusion Coupled with a well-designed user interface, Microarray Я US leverages cutting edge Bioconductor packages for researchers with no knowledge in R language. It also enables a more reliable and accurate microarray data analysis and expedites downstream functional analysis of microarray results.

  2. CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

    CERN Document Server

    Ghafar-Zadeh, Ebrahim

    2010-01-01

    The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

  3. Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor

    NARCIS (Netherlands)

    Xie, N.; Theuwissen, A.J.P.

    2013-01-01

    A micro-digital sun sensor (μDSS) is a sun detector which senses a satellite’s instant attitude angle with respect to the sun. The core of this sensor is a system-on-chip imaging chip which is referred to as APS+. The APS+ integrates a CMOS active pixel sensor (APS) array of 368×368  pixels , a 12-b

  4. A Nordic project on high speed low power design in sub-micron CMOS technology for mobile phones

    DEFF Research Database (Denmark)

    Olesen, Ole

    circuit design is based on state-of-the-art CMOS technology (0.5µm and below) including circuits operating at 2GHz. CMOS technology is chosen, since a CMOS implementation is likely to be significantly cheaper than a bipolar or a BiCMOS solution, and it offers the possibility to integrate the predominantly...

  5. Performance Comparison of Bipolar Vs CMOS VCO in BiCMOS Technology%基于BiCMOS工艺的Bipolar VCO和CMOS VCO性能对比

    Institute of Scientific and Technical Information of China (English)

    欧阳宏志; 陈洪云; 苏旷宇

    2007-01-01

    阐述了基于BiCMOS工艺的全集成LC调谐压控振荡器的基本原理.为了比较Bipolar VCO和CMOS VCO的性能,他们很好地设计在同一块芯片上.在560M的中心频率上,CMOS VCO无论在功耗,还是在相位噪声方面都要优于Bipolar VCO,他们的电流消耗分别为3.9 mA和5.9 mA,两种VCO都是基于0.6 μm BiCMOS工艺而仿真和测量的.

  6. Design and Implementation of a Hybrid SET-CMOS Based Sequential Circuits

    Directory of Open Access Journals (Sweden)

    Anindya Jana

    2012-05-01

    Full Text Available Single Electron Transistor is a hot cake in the present research area of VLSI design and Microelectron-ics technology. It operates through one-by-one tunneling of electrons through the channel, utilizing the Coulomb blockade Phenomenon. Due to nanoscale feature size, ultralow power dissipation, and unique Coulomb blockade oscillation characteristics it may replace Field Effect Transistor FET. SET is very much advantageous than CMOS in few points. And in few points CMOS is advantageous than SET. So it has been seen that Combination of SET and CMOS is very much effective in the nanoscale, low power VLSI circuits. This paper has given a idea to make different sequential circuits using the Hybrid SET-CMOS. The MIB model for SET and BSIM4 model for CMOS are used. The operations of the proposed circuits are verified in Tanner environment. The performances of CMOS and Hybrid SET-CMOS based circuits are compared. The hybrid SET-CMOS circuit is found to consume lesser power than the CMOS based circuit. Further it is established that hybrid SET-CMOS based circuit is much faster compared to CMOS based circuit.

  7. Single-species microarrays and comparative transcriptomics.

    Directory of Open Access Journals (Sweden)

    Frédéric J J Chain

    Full Text Available BACKGROUND: Prefabricated expression microarrays are currently available for only a few species but methods have been proposed to extend their application to comparisons between divergent genomes. METHODOLOGY/PRINCIPAL FINDINGS: Here we demonstrate that the hybridization intensity of genomic DNA is a poor basis on which to select unbiased probes on Affymetrix expression arrays for studies of comparative transcriptomics, and that doing so produces spurious results. We used the Affymetrix Xenopus laevis microarray to evaluate expression divergence between X. laevis, X. borealis, and their F1 hybrids. When data are analyzed with probes that interrogate only sequences with confirmed identity in both species, we recover results that differ substantially analyses that use genomic DNA hybridizations to select probes. CONCLUSIONS/SIGNIFICANCE: Our findings have implications for the experimental design of comparative expression studies that use single-species microarrays, and for our understanding of divergent expression in hybrid clawed frogs. These findings also highlight important limitations of single-species microarrays for studies of comparative transcriptomics of polyploid species.

  8. Shrinkage covariance matrix approach for microarray data

    Science.gov (United States)

    Karjanto, Suryaefiza; Aripin, Rasimah

    2013-04-01

    Microarray technology was developed for the purpose of monitoring the expression levels of thousands of genes. A microarray data set typically consists of tens of thousands of genes (variables) from just dozens of samples due to various constraints including the high cost of producing microarray chips. As a result, the widely used standard covariance estimator is not appropriate for this purpose. One such technique is the Hotelling's T2 statistic which is a multivariate test statistic for comparing means between two groups. It requires that the number of observations (n) exceeds the number of genes (p) in the set but in microarray studies it is common that n Hotelling's T2 statistic with the shrinkage approach is proposed to estimate the covariance matrix for testing differential gene expression. The performance of this approach is then compared with other commonly used multivariate tests using a widely analysed diabetes data set as illustrations. The results across the methods are consistent, implying that this approach provides an alternative to existing techniques.

  9. Pineal function : Impact of microarray analysis

    NARCIS (Netherlands)

    Klein, David C.; Bailey, Michael J.; Carter, David A.; Kim, Jong-so; Shi, Qiong; Ho, Anthony K.; Chik, Constance L.; Gaildrat, Pascaline; Morin, Fabrice; Ganguly, Surajit; Rath, Martin F.; Moller, Morten; Sugden, David; Rangel, Zoila G.; Munson, Peter J.; Weller, Joan L.; Coon, Steven L.

    2010-01-01

    Microarray analysis has provided a new understanding of pineal function by identifying genes that are highly expressed in this tissue relative to other tissues and also by identifying over 600 genes that are expressed on a 24-h schedule. This effort has highlighted surprising similarity to the retin

  10. CMOS integrator based lock-in pixel for heterodyne interferometry

    NARCIS (Netherlands)

    Soloviev, O.; Vdovin, G.

    2005-01-01

    This article presents a prototype of a CMOS phase sensor for high accuracy (1 Angstrom) heterodyne interferometry. Switched integrators realization of a lock-in pixel for 4-bucket phase detection algorithm is described and illustrated by experimental results. Factors that limit the accuracy of this

  11. Nanocantilever based mass sensor integrated with cmos circuitry

    DEFF Research Database (Denmark)

    Davis, Zachary James; Abadal, G.; Campabadal, F.;

    2003-01-01

    We have demonstrated the successful integration of a cantilever based mass detector with standard CMOS circuitry. The purpose of the circuitry is to facilitate the readout of the cantilever's deflection in order to measure resonant frequency shifts of the cantilever. The principle and design of t...

  12. CMOS VLSI Layout and Verification of a SIMD Computer

    Science.gov (United States)

    Zheng, Jianqing

    1996-01-01

    A CMOS VLSI layout and verification of a 3 x 3 processor parallel computer has been completed. The layout was done using the MAGIC tool and the verification using HSPICE. Suggestions for expanding the computer into a million processor network are presented. Many problems that might be encountered when implementing a massively parallel computer are discussed.

  13. Thermal-Diffusivity-Based Frequency References in Standard CMOS

    NARCIS (Netherlands)

    Kashmiri, S.M.

    2012-01-01

    In recent years, a lot of research has been devoted to the realization of accurate integrated frequency references. A thermal-diffusivity-based (TD) frequency reference provides an alternative method of on-chip frequency generation in standard CMOS technology. A frequency-locked loop locks the

  14. Reducing crosstalk in vertically integrated CMOS image sensors

    Science.gov (United States)

    Skorka, Orit; Joseph, Dileepan

    2010-01-01

    Image sensors can benefit from 3D IC fabrication methods because photodetectors and electronic circuits may be fabricated using significantly different processes. When fabricating the die that contains the photodetectors, it is desirable to avoid pixel level patterning of the light sensitive semiconductor. But without a physical border between adjacent photodetectors, lateral currents may flow between neighboring devices, which is called "crosstalk". This work introduces circuits that can be used to reduce crosstalk in vertically-integrated (VI) CMOS image sensors with an unpatterned photodetector array. It treats the case of a VI-CMOS image sensor composed of a silicon die with CMOS read-out circuits and a transparent die with an unpatterned array of photodetectors. A reduction in crosstalk can be achieved by maintaining a constant electric potential at all nodes, at which the photodetector array connects with the readout circuit array. This can be implemented by designing a pixel circuit that uses an operational amplifier with a logarithmic feedback to control the voltage at the input node. The work presents several optional circuit configurations for the pixel circuit, and indicates the one that is the most power efficient. Afterwards, it uses a simplified small-signal model of the pixel circuit to address stability and compensation issues. Lastly, the method is validated through circuit simulation for a standard CMOS process.

  15. High performance flexible CMOS SOI FinFETs

    KAUST Repository

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  16. Photon imaging using post-processed CMOS chips

    NARCIS (Netherlands)

    Melai, Joost

    2010-01-01

    This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic s

  17. CMOS Ultra Low Power Radiation Tolerant (CULPRiT) Microelectronics

    Science.gov (United States)

    Yeh, Penshu; Maki, Gary

    2007-01-01

    Space Electronics needs Radiation Tolerance or hardness to withstand the harsh space environment: high-energy particles can change the state of the electronics or puncture transistors making them disfunctional. This viewgraph document reviews the use of CMOS Ultra Low Power Radiation Tolerant circuits for NASA's electronic requirements.

  18. An RF Power Amplifier in a Digital CMOS Process

    DEFF Research Database (Denmark)

    Nielsen, Per Asbeck; Fallesen, Carsten

    2002-01-01

    A two stage class B power amplifier for 1.9 GHz is presented. The amplifier is fabricated in a standard digital EPI-CMOS process with low resistivity substrate. The measured output power is 29 dBm in a 50 Omega load. A design method to find the large signal parameters of the output transistor...

  19. CMOS image sensors as an efficient platform for glucose monitoring.

    Science.gov (United States)

    Devadhasan, Jasmine Pramila; Kim, Sanghyo; Choi, Cheol Soo

    2013-10-07

    Complementary metal oxide semiconductor (CMOS) image sensors have been used previously in the analysis of biological samples. In the present study, a CMOS image sensor was used to monitor the concentration of oxidized mouse plasma glucose (86-322 mg dL(-1)) based on photon count variation. Measurement of the concentration of oxidized glucose was dependent on changes in color intensity; color intensity increased with increasing glucose concentration. The high color density of glucose highly prevented photons from passing through the polydimethylsiloxane (PDMS) chip, which suggests that the photon count was altered by color intensity. Photons were detected by a photodiode in the CMOS image sensor and converted to digital numbers by an analog to digital converter (ADC). Additionally, UV-spectral analysis and time-dependent photon analysis proved the efficiency of the detection system. This simple, effective, and consistent method for glucose measurement shows that CMOS image sensors are efficient devices for monitoring glucose in point-of-care applications.

  20. Fabrication and characterization of CMOS-MEMS thermoelectric micro generators.

    Science.gov (United States)

    Kao, Pin-Hsu; Shih, Po-Jen; Dai, Ching-Liang; Liu, Mao-Chen

    2010-01-01

    This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K.

  1. Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

    Directory of Open Access Journals (Sweden)

    Mao-Chen Liu

    2010-02-01

    Full Text Available This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K.

  2. A CMOS OTA for HF filters with programmable transfer function

    NARCIS (Netherlands)

    van de Zwan, Eric J.; Klumperink, Eric A.M.; Seevinck, E.; Seevinck, Evert

    1991-01-01

    A CMOS operational transconductance amplifier (OTA) for programmable HF filters is presented. When used in an OTA-C integrator, the unity-gain frequency phase error remains less than 0.3° for frequencies up to more than one tenth of the OTA bandwidth. The OTA has built-in phase compensation, which

  3. A CMOS low-noise instrumentation amplifier using chopper modulation

    DEFF Research Database (Denmark)

    Nielsen, Jannik Hammel; Bruun, Erik

    2005-01-01

    This paper describes a low-power, low-noise chopper stabilized CMOS instrumentation amplifier for biomedical applications. Low thermal noise is achieved by employing MOSTs biased in the weak/moderate inversion region, whereas chopper stabilization is utilized to shift 1/f-noise out of the signal...

  4. A CMOS Wideband Linear Current Attenuator with Electronically Variable Gain

    NARCIS (Netherlands)

    Wiegerink, Remco J.

    1993-01-01

    A CMOS highly linear current attenuator is described. The circuit is suited for both differential and single input currents. The current gain is electronically variable between -1 and +1 by means of two controlling currents. A simple additional circuit is described to obtain a gain that is linearly

  5. Simulation toolkit with CMOS detector in the framework of hadrontherapy

    Directory of Open Access Journals (Sweden)

    Rescigno R.

    2014-03-01

    Full Text Available Proton imaging can be seen as a powerful technique for on-line monitoring of ion range during carbon ion therapy irradiation. The protons detection technique uses, as three-dimensional tracking system, a set of CMOS sensor planes. A simulation toolkit based on GEANT4 and ROOT is presented including detector response and reconstruction algorithm.

  6. Simulation toolkit with CMOS detector in the framework of hadrontherapy

    Science.gov (United States)

    Rescigno, R.; Finck, Ch.; Juliani, D.; Baudot, J.; Dauvergne, D.; Dedes, G.; Krimmer, J.; Ray, C.; Reithinger, V.; Rousseau, M.; Testa, E.; Winter, M.

    2014-03-01

    Proton imaging can be seen as a powerful technique for on-line monitoring of ion range during carbon ion therapy irradiation. The protons detection technique uses, as three-dimensional tracking system, a set of CMOS sensor planes. A simulation toolkit based on GEANT4 and ROOT is presented including detector response and reconstruction algorithm.

  7. A CMOS image sensor with row and column profiling means

    NARCIS (Netherlands)

    Xie, N.; Theuwissen, A.J.P.; Wang, X.; Leijtens, J.A.P.; Hakkesteegt, H.; Jansen, H.

    2008-01-01

    This paper describes the implementation and firstmeasurement results of a new way that obtains row and column profile data from a CMOS Image Sensor, which is developed for a micro-Digital Sun Sensor (μDSS).The basic profiling action is achieved by the pixels with p-type MOS transistors which realize

  8. Thermal-Diffusivity-Based Frequency References in Standard CMOS

    NARCIS (Netherlands)

    Kashmiri, S.M.

    2012-01-01

    In recent years, a lot of research has been devoted to the realization of accurate integrated frequency references. A thermal-diffusivity-based (TD) frequency reference provides an alternative method of on-chip frequency generation in standard CMOS technology. A frequency-locked loop locks the outpu

  9. Fundamental Characteristics of a Pinned Photodiode CMOS Pixels

    NARCIS (Netherlands)

    Xu, Y.

    2015-01-01

    This thesis gives an insightful analysis of the pinned photodiode 4T CMOS pixel from three different aspects. Firstly, from the charge accumulated aspect, the PPD full well capacity and related parameters of influence are investigated such as the pinning voltage, and transfer gate potential barrier.

  10. Design of a CMOS temperature sensor with current output

    NARCIS (Netherlands)

    Kolling, A.; Kölling, Arjan; Bak, Frans; Bergveld, Piet; Seevinck, E.; Seevinck, Evert

    1990-01-01

    In this paper a CMOS temperature-to-current converter is presented of which the output current is the difference between a PTC current and an NTC current. The PTC current is derived from a PTAT cell, while the NTC current is derived from a threshold voltage reference source. It is shown that this

  11. A CMOS Wideband Linear Current Attenuator with Electronically Variable Gain

    NARCIS (Netherlands)

    Wiegerink, Remco J.

    1993-01-01

    A CMOS highly linear current attenuator is described. The circuit is suited for both differential and single input currents. The current gain is electronically variable between -1 and +1 by means of two controlling currents. A simple additional circuit is described to obtain a gain that is linearly

  12. Design for manufacturability and yield for nano-scale CMOS

    CERN Document Server

    Chiang, Charles C

    2007-01-01

    Talks about the various aspects of manufacturability and yield in a nano-CMOS process and how to address each aspect at the proper design step starting with the design and layout of standard cells. This book is suitable for practicing IC designer and for graduate students intent on having a career in IC design or in EDA tool development.

  13. Gamma measurement based on CMOS sensor and ARM microcontroller

    National Research Council Canada - National Science Library

    Cheng, Qian-Qian; Yuan, Yan-Zhong; Ma, Chun-Wang; Wang, Fang

    2017-01-01

    A setup based on CMOS sensor and ARM microcontroller is designed to measure the γ-rays. STM32F103 is used as the main platform to control real-time online analysis of the image collected by the OV7670 CAMERACHIP...

  14. Chopper amplifier circuit with CMOS switches and amplifier FETs

    NARCIS (Netherlands)

    Huijsing, J.H.; Bakker, A.

    1997-01-01

    Abstract of NL 1001231 (C2) The input voltage is fed to the inputs of an operational amplifier via a chopping reversal switchThe CMOS operational amplifier has a current source and a current mirror. The operational amplifier output is fed to an output circuit. The possible offset voltage is supp

  15. Research-grade CMOS image sensors for demanding space applications

    Science.gov (United States)

    Saint-Pé, Olivier; Tulet, Michel; Davancens, Robert; Larnaudie, Franck; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Belliot, Pierre

    2004-06-01

    Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle...) and Universe observation (space telescope focal planes, guiding sensors...). This market has been dominated by CCD technology for long. Since the mid-90s, CMOS Image Sensors (CIS) have been competing with CCDs for more and more consumer domains (webcams, cell phones, digital cameras...). Featuring significant advantages over CCD sensors for space applications (lower power consumption, smaller system size, better radiations behaviour...), CMOS technology is also expanding in this field, justifying specific R&D and development programs funded by national and European space agencies (mainly CNES, DGA, and ESA). All along the 90s and thanks to their increasingly improving performances, CIS have started to be successfully used for more and more demanding applications, from vision and control functions requiring low-level performances to guidance applications requiring medium-level performances. Recent technology improvements have made possible the manufacturing of research-grade CIS that are able to compete with CCDs in the high-performances arena. After an introduction outlining the growing interest of optical instruments designers for CMOS image sensors, this talk will present the existing and foreseen ways to reach high-level electro-optics performances for CIS. The developments of CIS prototypes built using an imaging CMOS process and of devices based on improved designs will be presented.

  16. Research-grade CMOS image sensors for remote sensing applications

    Science.gov (United States)

    Saint-Pe, Olivier; Tulet, Michel; Davancens, Robert; Larnaudie, Franck; Magnan, Pierre; Martin-Gonthier, Philippe; Corbiere, Franck; Belliot, Pierre; Estribeau, Magali

    2004-11-01

    Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle...) and Universe observation (space telescope focal planes, guiding sensors...). This market has been dominated by CCD technology for long. Since the mid-90s, CMOS Image Sensors (CIS) have been competing with CCDs for consumer domains (webcams, cell phones, digital cameras...). Featuring significant advantages over CCD sensors for space applications (lower power consumption, smaller system size, better radiations behaviour...), CMOS technology is also expanding in this field, justifying specific R&D and development programs funded by national and European space agencies (mainly CNES, DGA and ESA). All along the 90s and thanks to their increasingly improving performances, CIS have started to be successfully used for more and more demanding space applications, from vision and control functions requiring low-level performances to guidance applications requiring medium-level performances. Recent technology improvements have made possible the manufacturing of research-grade CIS that are able to compete with CCDs in the high-performances arena. After an introduction outlining the growing interest of optical instruments designers for CMOS image sensors, this paper will present the existing and foreseen ways to reach high-level electro-optics performances for CIS. The developments and performances of CIS prototypes built using an imaging CMOS process will be presented in the corresponding section.

  17. CMOS多通道芯片%CMOS Multi-Channel Chips

    Institute of Scientific and Technical Information of China (English)

    康凯; 高宗智

    2016-01-01

    In order to overcome a number of challenges in CMOS millimeter-wave integrated circuit design, the millimeter-wave device modeling, antenna design, circuit block, and multi-channel transceiver system are introduced in this paper. The equivalent-circuit models of millimeter-wave on-chip interconnected lines, multiple-coupled inductors, six-portM:N transformers, and the model of terahertz active device are studied and proposed, respectively. Moreover, a low noise amplifier with noise canceling and a power amplifier with a fully symmetrical distributed active transformer are introduced in this paper. Furthermore, the CMOS 60 GHz receiver with on-chip antenna and the multi-channel phase array transceiver are described, respectively.%针对互补金属氧化物半导体(CMOS)工艺在毫米波集成电路设计中存在的诸多挑战,分别从毫米波器件建模和天线设计,毫米波电路模块设计和多通道收发系统设计方面进行介绍,以克服相应挑战。该文研究和建立了毫米波频段片上互连线,耦合电感和六端口M:N变压器的等效模型和太赫兹有源器件模型,并对毫米波片上天线进行设计;介绍了基于噪声抵消的低噪声放大器电路和基于全对称平衡分布式有源变压器的功率放大器电路、毫米波移相器电路以及集成片上天线的CMOS 60 GHz接收机和多通道相控阵收发系统。

  18. A Method of Microarray Data Storage Using Array Data Type

    Science.gov (United States)

    Tsoi, Lam C.; Zheng, W. Jim

    2009-01-01

    A well-designed microarray database can provide valuable information on gene expression levels. However, designing an efficient microarray database with minimum space usage is not an easy task since designers need to integrate the microarray data with the information of genes, probe annotation, and the descriptions of each microarray experiment. Developing better methods to store microarray data can greatly improve the efficiency and usefulness of such data. A new schema is proposed to store microarray data by using array data type in an object-relational database management system – PostgreSQL. The implemented database can store all the microarray data from the same chip in an array data structure. The variable length array data type in PostgreSQL can store microarray data from same chip. The implementation of our schema can help to increase the data retrieval and space efficiency. PMID:17392028

  19. Characterizations of and Radiation Effects in Several Emerging CMOS Technologies

    Science.gov (United States)

    Shufeng Ren

    As the conventional scaling of Si based CMOS is approaching its limit at 7 nm technology node, many perceive that the adoption of novel materials and/or device structures are inevitable to keep Moore's law going. High mobility channel materials such as III-V compound semiconductors or Ge are considered promising to replace Si in order to achieve high performance as well as low power consumption. However, interface and oxide traps have become a major obstacle for high-mobility semiconductors (such as Ge, GaAs, InGaAs, GaSb, etc) to replace Si CMOS technology. Therefore novel high-k dielectrics, such as epitaxially grown crystalline oxides, have been explored to be incorporated onto the high mobility channel materials. Moreover, to enable continued scaling, extremely scaled devices structures such as nanowire gate-all-around structure are needed in the near future. Moreover, as the CMOS industry moves into the 7 nm node and beyond, novel lithography techniques such as EUV are believed to be adopted soon, which can bring radiation damage to CMOS devices and circuit during the fabrication process. Therefore radiation hardening technology in future generations of CMOS devices has again become an interesting research topic to deal with the possible process-induced damage as well as damage caused by operating in radiation harsh environment such as outer space, nuclear plant, etc. In this thesis, the electrical properties of a few selected emerging novel CMOS devices are investigated, which include InGaAs based extremely scaled ultra-thin body nanowire gate-all-around MOSFETs, GOI (Ge On Insulator) CMOS with recessed channel and source/drain, GaAs MOSFETs with crystalline La based gate stack, and crystalline SrTiO3, are investigated to extend our understanding of their electrical characteristics, underlying physical mechanisms, and material properties. Furthermore, the radiation responses of these aforementioned novel devices are thoroughly investigated, with a focus on

  20. Examining microarray slide quality for the EPA using SNL's hyperspectral microarray scanner.

    Energy Technology Data Exchange (ETDEWEB)

    Rohde, Rachel M.; Timlin, Jerilyn Ann

    2005-11-01

    This report summarizes research performed at Sandia National Laboratories (SNL) in collaboration with the Environmental Protection Agency (EPA) to assess microarray quality on arrays from two platforms of interest to the EPA. Custom microarrays from two novel, commercially produced array platforms were imaged with SNL's unique hyperspectral imaging technology and multivariate data analysis was performed to investigate sources of emission on the arrays. No extraneous sources of emission were evident in any of the array areas scanned. This led to the conclusions that either of these array platforms could produce high quality, reliable microarray data for the EPA toxicology programs. Hyperspectral imaging results are presented and recommendations for microarray analyses using these platforms are detailed within the report.