Towards developing a compact model for magnetization switching in straintronics magnetic random access memory devices

Energy Technology Data Exchange (ETDEWEB)

Barangi, Mahmood, E-mail: barangi@umich.edu; Erementchouk, Mikhail; Mazumder, Pinaki [Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2121 (United States)

2016-08-21

Strain-mediated magnetization switching in a magnetic tunneling junction (MTJ) by exploiting a combination of piezoelectricity and magnetostriction has been proposed as an energy efficient alternative to spin transfer torque (STT) and field induced magnetization switching methods in MTJ-based magnetic random access memories (MRAM). Theoretical studies have shown the inherent advantages of strain-assisted switching, and the dynamic response of the magnetization has been modeled using the Landau-Lifshitz-Gilbert (LLG) equation. However, an attempt to use LLG for simulating dynamics of individual elements in large-scale simulations of multi-megabyte straintronics MRAM leads to extremely time-consuming calculations. Hence, a compact analytical solution, predicting the flipping delay of the magnetization vector in the nanomagnet under stress, combined with a liberal approximation of the LLG dynamics in the straintronics MTJ, can lead to a simplified model of the device suited for fast large-scale simulations of multi-megabyte straintronics MRAMs. In this work, a tensor-based approach is developed to study the dynamic behavior of the stressed nanomagnet. First, using the developed method, the effect of stress on the switching behavior of the magnetization is investigated to realize the margins between the underdamped and overdamped regimes. The latter helps the designer realize the oscillatory behavior of the magnetization when settling along the minor axis, and the dependency of oscillations on the stress level and the damping factor. Next, a theoretical model to predict the flipping delay of the magnetization vector is developed and tested against LLG-based numerical simulations to confirm the accuracy of findings. Lastly, the obtained delay is incorporated into the approximate solutions of the LLG dynamics, in order to create a compact model to liberally and quickly simulate the magnetization dynamics of the MTJ under stress. Using the developed delay equation, the

Accessing memory

Science.gov (United States)

Yoon, Doe Hyun; Muralimanohar, Naveen; Chang, Jichuan; Ranganthan, Parthasarathy

2017-09-26

A disclosed example method involves performing simultaneous data accesses on at least first and second independently selectable logical sub-ranks to access first data via a wide internal data bus in a memory device. The memory device includes a translation buffer chip, memory chips in independently selectable logical sub-ranks, a narrow external data bus to connect the translation buffer chip to a memory controller, and the wide internal data bus between the translation buffer chip and the memory chips. A data access is performed on only the first independently selectable logical sub-rank to access second data via the wide internal data bus. The example method also involves locating a first portion of the first data, a second portion of the first data, and the second data on the narrow external data bus during separate data transfers.

Level set method for optimal shape design of MRAM core. Micromagnetic approach

International Nuclear Information System (INIS)

Melicher, Valdemar; Cimrak, Ivan; Keer, Roger van

2008-01-01

We aim at optimizing the shape of the magnetic core in MRAM memories. The evolution of the magnetization during the writing process is described by the Landau-Lifshitz equation (LLE). The actual shape of the core in one cell is characterized by the coefficient γ. Cost functional f=f(γ) expresses the quality of the writing process having in mind the competition between the full-select and the half-select element. We derive an explicit form of the derivative F=∂f/∂γ which allows for the use of gradient-type methods for the actual computation of the optimized shape (e.g., steepest descend method). The level set method (LSM) is employed for the representation of the piecewise constant coefficient γ

Preparation and characterization of a ferrimagnetic amorphous alloy of GdCo entering the design of magnetic tunnel junctions: ionizing radiations hardness of magnetic tunnel junctions; preparation et caracterisation d'un alliage amorphe ferrimagnetique de GdCo entrant dans la conception de jonctions tunnel magnetiques. Resistance des jonctions tunnel magnetiques aux rayonnements ionisants

Energy Technology Data Exchange (ETDEWEB)

Conraux, Y

2005-10-15

The magnetic random access memories (MRAM) are on the way to supplant the other forms of random access memories using the states of electric charge, and this thanks to their many technical advantages: not-volatility, speed, low consumption power, robustness. Also, the MRAM are alleged insensitive with the ionizing radiations, which was not checked in experiments until now. The current architecture of the MRAM is based on the use of magnetic tunnel junctions (MTJ). These MRAM can present an important disadvantage, because they are likely of present errors of addressing, in particular when integration (density of memory cells) is increasingly thorough. The work undertaken during this thesis relates to these two points: - to check the functional reliability of the MRAM containing JTM exposed to high energy ionizing radiations; - to study a ferrimagnetic amorphous alloy, GdCo, likely to enter the composition of JTM and allowing to free from the possible errors of addressing by a process of thermal inhibition of the memory cells. This work of thesis showed that the MRAM containing JTM preserve their functional properties fully when they are subjected to intense ionizing radiations, and that GdCo is a very interesting material from the point of view of the solid state physics and magnetism, that its physical properties are very promising as for its applications, and that its integration in a JTM still claims technological developments. (author)

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy

Science.gov (United States)

Gajek, M.; Nowak, J. J.; Sun, J. Z.; Trouilloud, P. L.; O'Sullivan, E. J.; Abraham, D. W.; Gaidis, M. C.; Hu, G.; Brown, S.; Zhu, Y.; Robertazzi, R. P.; Gallagher, W. J.; Worledge, D. C.

2012-03-01

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

Directory of Open Access Journals (Sweden)

Austin Deschenes

2016-11-01

Full Text Available Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM. Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ, most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

Atomic memory access hardware implementations

Science.gov (United States)

Ahn, Jung Ho; Erez, Mattan; Dally, William J

2015-02-17

Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

Overview of emerging nonvolatile memory technologies.

Science.gov (United States)

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Overview of emerging nonvolatile memory technologies

Science.gov (United States)

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

Quantum random access memory

OpenAIRE

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2007-01-01

A random access memory (RAM) uses n bits to randomly address N=2^n distinct memory cells. A quantum random access memory (qRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that exponentially reduces the requirements for a memory call: O(log N) switches need be thrown instead of the N used in conventional (classical or quantum) RAM designs. This yields a more robust qRAM algorithm, as it in general requires entanglement among exponentially l...

Architectures for a quantum random access memory

OpenAIRE

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2008-01-01

A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n-bit addresses can access 2^n memory sites. Any design for a RAM or qRAM then requires O(2^n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices ...

Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

Energy Technology Data Exchange (ETDEWEB)

Ohmacht, Martin

2017-08-15

In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

Generation-based memory synchronization in a multiprocessor system with weakly consistent memory accesses

Science.gov (United States)

Ohmacht, Martin

2014-09-09

In a multiprocessor system, a central memory synchronization module coordinates memory synchronization requests responsive to memory access requests in flight, a generation counter, and a reclaim pointer. The central module communicates via point-to-point communication. The module includes a global OR reduce tree for each memory access requesting device, for detecting memory access requests in flight. An interface unit is implemented associated with each processor requesting synchronization. The interface unit includes multiple generation completion detectors. The generation count and reclaim pointer do not pass one another.

Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

DEFF Research Database (Denmark)

Cagliani, Alberto; Kjær, Daniel; Østerberg, Frederik Westergaard

2017-01-01

The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase...... of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification....

Nonvolatile Memory Technology for Space Applications

Science.gov (United States)

Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

2010-01-01

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Method and apparatus for managing access to a memory

Science.gov (United States)

DeBenedictis, Erik

2017-08-01

A method and apparatus for managing access to a memory of a computing system. A controller transforms a plurality of operations that represent a computing job into an operational memory layout that reduces a size of a selected portion of the memory that needs to be accessed to perform the computing job. The controller stores the operational memory layout in a plurality of memory cells within the selected portion of the memory. The controller controls a sequence by which a processor in the computing system accesses the memory to perform the computing job using the operational memory layout. The operational memory layout reduces an amount of energy consumed by the processor to perform the computing job.

Accessing forgotten memory traces from long-term memory via visual movements

Directory of Open Access Journals (Sweden)

Estela eCamara

2014-11-01

Full Text Available Because memory retrieval often requires overt responses, it is difficult to determine to what extend forgetting occurs as a problem in explicit accessing of long-term memory traces. In this study, we used eye-tracking measures in combination with a behavioural task that favoured high forgetting rates to investigate the existence of memory traces from long-term memory in spite of failure in accessing them consciously. In 2 experiments, participants were encouraged to encode a large set of sound-picture-location associations. In a later test, sounds were presented and participants were instructed to visually scan, before a verbal memory report, for the correct location of the associated pictures in an empty screen. We found the reactivation of associated memories by sound cues at test biased oculomotor behaviour towards locations congruent with memory representations, even when participants failed to consciously provide a memory report of it. These findings reveal the emergence of a memory-guided behaviour that can be used to map internal representations of forgotten memories from long-term memory.

CMOS-compatible spintronic devices: a review

Science.gov (United States)

Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

2016-11-01

For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

Few-nanosecond pulse switching with low write error for in-plane nanomagnets using the spin-Hall effect

Science.gov (United States)

Aradhya, Sriharsha; Rowlands, Graham; Shi, Shengjie; Oh, Junseok; Ralph, D. C.; Buhrman, Robert

Magnetic random access memory (MRAM) using spin transfer torques (STT) holds great promise for replacing existing best-in-class memory technologies in several application domains. Research on conventional two-terminal STT-MRAM thus far has revealed the existence of limitations that constrain switching reliability and speed for both in-plane and perpendicularly magnetized devices. Recently, spin torque arising from the giant spin-Hall effect in Ta, W and Pt has been shown to be an efficient mechanism to switch magnetic bits in a three-terminal geometry. Here we report highly reliable, nanosecond timescale pulse switching of three-terminal devices with in-plane magnetized magnetic tunnel junctions. We obtain write error rates (WER) down to ~10-5 using pulses as short as 2 ns, in contrast to conventional in-plane STT-MRAM devices where write speeds were limited to a few tens of nanoseconds for comparable WER. Utilizing micro-magnetic simulations, we discuss the differences from conventional MRAM that allow for this unanticipated and significant performance improvement. Finally, we highlight the path towards practical application enabled by the ability to separately optimize the read and write pathways in three-terminal devices.

Silicon spintronics: Progress and challenges

Energy Technology Data Exchange (ETDEWEB)

Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

2015-07-14

Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

Silicon spintronics: Progress and challenges

International Nuclear Information System (INIS)

Sverdlov, Viktor; Selberherr, Siegfried

2015-01-01

Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

Hardware Compilation of Application-Specific Memory-Access Interconnect

DEFF Research Database (Denmark)

Venkataramani, Girish; Bjerregaard, Tobias; Chelcea, Tiberiu

2006-01-01

operations dependent on memory reads. More fundamental is that dependences between accesses may not be statically provable (e.g., if the specification language permits pointers), which introduces memory-consistency problems. Addressing these issues with static scheduling results in overly conservative...... enables specifications to include arbitrary memory references (e.g., pointers) and allows the memory system to incorporate features that might cause the latency of a memory access to vary dynamically. This results in raising the level of abstraction in the input specification, enabling faster design times...

Self-Testing Static Random-Access Memory

Science.gov (United States)

Chau, Savio; Rennels, David

1991-01-01

Proposed static random-access memory for computer features improved error-detecting and -correcting capabilities. New self-testing scheme provides for detection and correction of errors at any time during normal operation - even while data being written into memory. Faults in equipment causing errors in output data detected by repeatedly testing every memory cell to determine whether it can still store both "one" and "zero", without destroying data stored in memory.

Non-volatile main memory management methods based on a file system.

Science.gov (United States)

Oikawa, Shuichi

2014-01-01

There are upcoming non-volatile (NV) memory technologies that provide byte addressability and high performance. PCM, MRAM, and STT-RAM are such examples. Such NV memory can be used as storage because of its data persistency without power supply while it can be used as main memory because of its high performance that matches up with DRAM. There are a number of researches that investigated its uses for main memory and storage. They were, however, conducted independently. This paper presents the methods that enables the integration of the main memory and file system management for NV memory. Such integration makes NV memory simultaneously utilized as both main memory and storage. The presented methods use a file system as their basis for the NV memory management. We implemented the proposed methods in the Linux kernel, and performed the evaluation on the QEMU system emulator. The evaluation results show that 1) the proposed methods can perform comparably to the existing DRAM memory allocator and significantly better than the page swapping, 2) their performance is affected by the internal data structures of a file system, and 3) the data structures appropriate for traditional hard disk drives do not always work effectively for byte addressable NV memory. We also performed the evaluation of the effects caused by the longer access latency of NV memory by cycle-accurate full-system simulation. The results show that the effect on page allocation cost is limited if the increase of latency is moderate.

Architectures for a quantum random access memory

Science.gov (United States)

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2008-11-01

A random access memory, or RAM, is a device that, when interrogated, returns the content of a memory location in a memory array. A quantum RAM, or qRAM, allows one to access superpositions of memory sites, which may contain either quantum or classical information. RAMs and qRAMs with n -bit addresses can access 2n memory sites. Any design for a RAM or qRAM then requires O(2n) two-bit logic gates. At first sight this requirement might seem to make large scale quantum versions of such devices impractical, due to the difficulty of constructing and operating coherent devices with large numbers of quantum logic gates. Here we analyze two different RAM architectures (the conventional fanout and the “bucket brigade”) and propose some proof-of-principle implementations, which show that, in principle, only O(n) two-qubit physical interactions need take place during each qRAM call. That is, although a qRAM needs O(2n) quantum logic gates, only O(n) need to be activated during a memory call. The resulting decrease in resources could give rise to the construction of large qRAMs that could operate without the need for extensive quantum error correction.

Notified Access: Extending Remote Memory Access Programming Models for Producer-Consumer Synchronization

KAUST Repository

Belli, Roberto; Hoefler, Torsten

2015-01-01

Remote Memory Access (RMA) programming enables direct access to low-level hardware features to achieve high performance for distributed-memory programs. However, the design of RMA programming schemes focuses on the memory access and less on the synchronization. For example, in contemporary RMA programming systems, the widely used producer-consumer pattern can only be implemented inefficiently, incurring in an overhead of an additional round-trip message. We propose Notified Access, a scheme where the target process of an access can receive a completion notification. This scheme enables direct and efficient synchronization with a minimum number of messages. We implement our scheme in an open source MPI-3 RMA library and demonstrate lower overheads (two cache misses) than other point-to-point synchronization mechanisms for each notification. We also evaluate our implementation on three real-world benchmarks, a stencil computation, a tree computation, and a Colicky factorization implemented with tasks. Our scheme always performs better than traditional message passing and other existing RMA synchronization schemes, providing up to 50% speedup on small messages. Our analysis shows that Notified Access is a valuable primitive for any RMA system. Furthermore, we provide guidance for the design of low-level network interfaces to support Notified Access efficiently.

Notified Access: Extending Remote Memory Access Programming Models for Producer-Consumer Synchronization

KAUST Repository

Belli, Roberto

2015-05-01

Remote Memory Access (RMA) programming enables direct access to low-level hardware features to achieve high performance for distributed-memory programs. However, the design of RMA programming schemes focuses on the memory access and less on the synchronization. For example, in contemporary RMA programming systems, the widely used producer-consumer pattern can only be implemented inefficiently, incurring in an overhead of an additional round-trip message. We propose Notified Access, a scheme where the target process of an access can receive a completion notification. This scheme enables direct and efficient synchronization with a minimum number of messages. We implement our scheme in an open source MPI-3 RMA library and demonstrate lower overheads (two cache misses) than other point-to-point synchronization mechanisms for each notification. We also evaluate our implementation on three real-world benchmarks, a stencil computation, a tree computation, and a Colicky factorization implemented with tasks. Our scheme always performs better than traditional message passing and other existing RMA synchronization schemes, providing up to 50% speedup on small messages. Our analysis shows that Notified Access is a valuable primitive for any RMA system. Furthermore, we provide guidance for the design of low-level network interfaces to support Notified Access efficiently.

Fast Magnetoresistive Random-Access Memory

Science.gov (United States)

Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

1991-01-01

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Direct Access to Working Memory Contents

NARCIS (Netherlands)

Bialkova, S.E.; Oberauer, K.

2010-01-01

Abstract. In two experiments participants held in working memory (WM) three digits in three different colors, and updated individual digits with the results of arithmetic equations presented in one of the colors. In the memory-access condition, a digit from WM had to be used as the first number in

Emerging memory technologies design, architecture, and applications

CERN Document Server

2014-01-01

This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits. • Provides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM; • Explores new design opportunities offered by emerging memory technologies, from a holistic perspective; • Describes topics in technology, modeling, architecture and applications; • Enables circuit designers to ex...

Efficient accesses of data structures using processing near memory

Science.gov (United States)

Jayasena, Nuwan S.; Zhang, Dong Ping; Diez, Paula Aguilera

2018-05-22

Systems, apparatuses, and methods for implementing efficient queues and other data structures. A queue may be shared among multiple processors and/or threads without using explicit software atomic instructions to coordinate access to the queue. System software may allocate an atomic queue and corresponding queue metadata in system memory and return, to the requesting thread, a handle referencing the queue metadata. Any number of threads may utilize the handle for accessing the atomic queue. The logic for ensuring the atomicity of accesses to the atomic queue may reside in a management unit in the memory controller coupled to the memory where the atomic queue is allocated.

Interacting Memory Systems—Does EEG Alpha Activity Respond to Semantic Long-Term Memory Access in a Working Memory Task?

Directory of Open Access Journals (Sweden)

Barbara Berger

2014-12-01

Full Text Available Memory consists of various individual processes which form a dynamic system co-ordinated by central (executive functions. The episodic buffer as direct interface between episodic long-term memory (LTM and working memory (WM is fairly well studied but such direct interaction is less clear in semantic LTM. Here, we designed a verbal delayed-match-to-sample task specifically to differentiate between pure information maintenance and mental manipulation of memory traces with and without involvement of access to semantic LTM. Task-related amplitude differences of electroencephalographic (EEG oscillatory brain activity showed a linear increase in frontal-midline theta and linear suppression of parietal beta amplitudes relative to memory operation complexity. Amplitude suppression at upper alpha frequency, which was previously found to indicate access to semantic LTM, was only sensitive to mental manipulation in general, irrespective of LTM involvement. This suggests that suppression of upper EEG alpha activity might rather reflect unspecific distributed cortical activation during complex mental processes than accessing semantic LTM.

Evaluation of External Memory Access Performance on a High-End FPGA Hybrid Computer

Directory of Open Access Journals (Sweden)

Konstantinos Kalaitzis

2016-10-01

Full Text Available The motivation of this research was to evaluate the main memory performance of a hybrid super computer such as the Convey HC-x, and ascertain how the controller performs in several access scenarios, vis-à-vis hand-coded memory prefetches. Such memory patterns are very useful in stencil computations. The theoretical bandwidth of the memory of the Convey is compared with the results of our measurements. The accurate study of the memory subsystem is particularly useful for users when they are developing their application-specific personality. Experiments were performed to measure the bandwidth between the coprocessor and the memory subsystem. The experiments aimed mainly at measuring the reading access speed of the memory from Application Engines (FPGAs. Different ways of accessing data were used in order to find the most efficient way to access memory. This way was proposed for future work in the Convey HC-x. When performing a series of accesses to memory, non-uniform latencies occur. The Memory Controller of the Convey HC-x in the coprocessor attempts to cover this latency. We measure memory efficiency as a ratio of the number of memory accesses and the number of execution cycles. The result of this measurement converges to one in most cases. In addition, we performed experiments with hand-coded memory accesses. The analysis of the experimental results shows how the memory subsystem and Memory Controllers work. From this work we conclude that the memory controllers do an excellent job, largely because (transparently to the user they seem to cache large amounts of data, and hence hand-coding is not needed in most situations.

Accessibility Limits Recall from Visual Working Memory

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Rajsic, Jason; Swan, Garrett; Wilson, Daryl E.; Pratt, Jay

2017-01-01

In this article, we demonstrate limitations of accessibility of information in visual working memory (VWM). Recently, cued-recall has been used to estimate the fidelity of information in VWM, where the feature of a cued object is reproduced from memory (Bays, Catalao, & Husain, 2009; Wilken & Ma, 2004; Zhang & Luck, 2008). Response…

Partitioning and Scheduling DSP Applications with Maximal Memory Access Hiding

Directory of Open Access Journals (Sweden)

Sha Edwin Hsing-Mean

2002-01-01

Full Text Available This paper presents an iteration space partitioning scheme to reduce the CPU idle time due to the long memory access latency. We take into consideration both the data accesses of intermediate and initial data. An algorithm is proposed to find the largest overlap for initial data to reduce the entire memory traffic. In order to efficiently hide the memory latency, another algorithm is developed to balance the ALU and memory schedules. The experiments on DSP benchmarks show that the algorithms significantly outperform the known existing methods.

In search of the next memory inside the circuitry from the oldest to the emerging non-volatile memories

CERN Document Server

Campardo, Giovanni

2017-01-01

This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the...

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

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Clément, P.-Y.; Baraduc, C.; Ducruet, C.; Vila, L.; Chshiev, M.; Diény, B.

2015-09-01

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.

Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Clément, P.-Y.; Baraduc, C.; Chshiev, M.; Diény, B.; Ducruet, C.; Vila, L.

2015-01-01

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated

Metallic spintronic devices

CERN Document Server

Wang, Xiaobin

2014-01-01

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

Memory architecture for efficient utilization of SDRAM: a case study of the computation/memory access trade-off

DEFF Research Database (Denmark)

Gleerup, Thomas Møller; Holten-Lund, Hans Erik; Madsen, Jan

2000-01-01

. In software, forward differencing is usually better, but in this hardware implementation, the trade-off has made it possible to develop a very regular memory architecture with a buffering system, which can reach 95% bandwidth utilization using off-the-shelf SDRAM, This is achieved by changing the algorithm......This paper discusses the trade-off between calculations and memory accesses in a 3D graphics tile renderer for visualization of data from medical scanners. The performance requirement of this application is a frame rate of 25 frames per second when rendering 3D models with 2 million triangles, i...... to use a memory access strategy with write-only and read-only phases, and a buffering system, which uses round-robin bank write-access combined with burst read-access....

Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

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Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

2016-07-01

A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

An Investigation of Unified Memory Access Performance in CUDA

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Landaverde, Raphael; Zhang, Tiansheng; Coskun, Ayse K.; Herbordt, Martin

2015-01-01

Managing memory between the CPU and GPU is a major challenge in GPU computing. A programming model, Unified Memory Access (UMA), has been recently introduced by Nvidia to simplify the complexities of memory management while claiming good overall performance. In this paper, we investigate this programming model and evaluate its performance and programming model simplifications based on our experimental results. We find that beyond on-demand data transfers to the CPU, the GPU is also able to request subsets of data it requires on demand. This feature allows UMA to outperform full data transfer methods for certain parallel applications and small data sizes. We also find, however, that for the majority of applications and memory access patterns, the performance overheads associated with UMA are significant, while the simplifications to the programming model restrict flexibility for adding future optimizations. PMID:26594668

Individual differences in memory span: the contribution of rehearsal, access to lexical memory, and output speed.

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Tehan, G; Lalor, D M

2000-11-01

Rehearsal speed has traditionally been seen to be the prime determinant of individual differences in memory span. Recent studies, in the main using young children as the subject population, have suggested other contributors to span performance, notably contributions from long-term memory and forgetting and retrieval processes occurring during recall. In the current research we explore individual differences in span with respect to measures of rehearsal, output time, and access to lexical memory. We replicate standard short-term phenomena; we show that the variables that influence children's span performance influence adult performance in the same way; and we show that lexical memory access appears to be a more potent source of individual differences in span than either rehearsal speed or output factors.

Database architecture optimized for the new bottleneck: Memory access

NARCIS (Netherlands)

P.A. Boncz (Peter); S. Manegold (Stefan); M.L. Kersten (Martin)

1999-01-01

textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

Optimizing Database Architecture for the New Bottleneck: Memory Access

NARCIS (Netherlands)

S. Manegold (Stefan); P.A. Boncz (Peter); M.L. Kersten (Martin)

2000-01-01

textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

Paging memory from random access memory to backing storage in a parallel computer

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Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

2013-05-21

Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

75 FR 14467 - In the Matter of: Certain Dynamic Random Access Memory Semiconductors and Products Containing...

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2010-03-25

... Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of... semiconductors and products containing same, including memory modules, by reason of infringement of certain... importation of certain dynamic random access memory semiconductors or products containing the same, including...

More than a feeling: Emotional cues impact the access and experience of autobiographical memories.

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Sheldon, Signy; Donahue, Julia

2017-07-01

Remembering is impacted by several factors of retrieval, including the emotional content of a memory cue. Here we tested how musical retrieval cues that differed on two dimensions of emotion-valence (positive and negative) and arousal (high and low)-impacted the following aspects of autobiographical memory recall: the response time to access a past personal event, the experience of remembering (ratings of memory vividness), the emotional content of a cued memory (ratings of event arousal and valence), and the type of event recalled (ratings of event energy, socialness, and uniqueness). We further explored how cue presentation affected autobiographical memory retrieval by administering cues of similar arousal and valence levels in a blocked fashion to one half of the tested participants, and randomly to the other half. We report three main findings. First, memories were accessed most quickly in response to musical cues that were highly arousing and positive in emotion. Second, we observed a relation between a cue and the elicited memory's emotional valence but not arousal; however, both the cue valence and arousal related to the nature of the recalled event. Specifically, high cue arousal led to lower memory vividness and uniqueness ratings, but cues with both high arousal and positive valence were associated with memories rated as more social and energetic. Finally, cue presentation impacted both how quickly and specifically memories were accessed and how cue valence affected the memory vividness ratings. The implications of these findings for views of how emotion directs the access to memories and the experience of remembering are discussed.

Semantic Dementia Shows both Storage and Access Disorders of Semantic Memory

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Yumi Takahashi

2014-01-01

Full Text Available Objective. Previous studies have shown that some patients with semantic dementia (SD have memory storage disorders, while others have access disorders. Here, we report three SD cases with both disorders. Methods. Ten pictures and ten words were prepared as visual stimuli to determine if the patients could correctly answer names and select pictures after hearing the names of items (Card Presentation Task, assessing memory storage disorder. In a second task, the viewing time was set at 20 or 300 msec (Momentary Presentation Task, evaluating memory access disorder using items for which correct answers were given in the first task. The results were compared with those for 6 patients with Alzheimer’s disease (AD. Results. The SD patients had lower scores than the AD group for both tasks, suggesting both storage and access disorders. The AD group had almost perfect scores on the Card Presentation Task but showed impairment on the Momentary Presentation Task, although to a lesser extent than the SD cases. Conclusions. These results suggest that SD patients have both storage and access disorders and have more severe access disorder than patients with AD.

Attentional priorities and access to short-term memory

DEFF Research Database (Denmark)

Gillebert, Celine; Dyrholm, Mads; Vangkilde, Signe Allerup

2012-01-01

The intraparietal sulcus (IPS) has been implicated in selective attention as well as visual short-term memory (VSTM). To contrast mechanisms of target selection, distracter filtering, and access to VSTM, we combined behavioral testing, computational modeling and functional magnetic resonance......, thereby displaying a significant interaction between the two factors. The interaction between target and distracter set size in IPS could not be accounted for by a simple explanation in terms of number of items accessing VSTM. Instead, it led us to a model where items accessing VSTM receive differential...

Recent trends in hardware security exploiting hybrid CMOS-resistive memory circuits

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Sahay, Shubham; Suri, Manan

2017-12-01

This paper provides a comprehensive review and insight of recent trends in the field of random number generator (RNG) and physically unclonable function (PUF) circuits implemented using different types of emerging resistive non-volatile (NVM) memory devices. We present a detailed review of hybrid RNG/PUF implementations based on the use of (i) Spin-Transfer Torque (STT-MRAM), and (ii) metal-oxide based (OxRAM), NVM devices. Various approaches on Hybrid CMOS-NVM RNG/PUF circuits are considered, followed by a discussion on different nanoscale device phenomena. Certain nanoscale device phenomena (variability/stochasticity etc), which are otherwise undesirable for reliable memory and storage applications, form the basis for low power and highly scalable RNG/PUF circuits. Detailed qualitative comparison and benchmarking of all implementations is performed.

Memory accessibility shapes explanation: Testing key claims of the inherence heuristic account.

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Hussak, Larisa J; Cimpian, Andrei

2018-01-01

People understand the world by constructing explanations for what they observe. It is thus important to identify the cognitive processes underlying these judgments. According to a recent proposal, everyday explanations are often constructed heuristically: Because people need to generate explanations on a moment-by-moment basis, they cannot perform an exhaustive search through the space of possible reasons, but may instead use the information that is most easily accessible in memory (Cimpian & Salomon 2014a, b). In the present research, we tested two key claims of this proposal that have so far not been investigated. First, we tested whether-as previously hypothesized-the information about an entity that is most accessible in memory tends to consist of inherent or intrinsic facts about that entity, rather than extrinsic (contextual, historical, etc.) facts about it (Studies 1 and 2). Second, we tested the implications of this difference in the memory accessibility of inherent versus extrinsic facts for the process of generating explanations: Does the fact that inherent facts are more accessible than relevant extrinsic facts give rise to an inherence bias in the content of the explanations generated (Studies 3 and 4)? The findings supported the proposal that everyday explanations are generated in part via a heuristic process that relies on easily accessible-and often inherent-information from memory.

Dataflow models for shared memory access latency analysis

NARCIS (Netherlands)

Staschulat, Jan; Bekooij, Marco Jan Gerrit

2009-01-01

Performance analysis of applications in multi-core platforms is challenging because of temporal interference while accessing shared resources. Especially, memory arbiters introduce a non-constant delay which signicantly in uences the execution time of a task. In this paper, we selected a

Making working memory work: the effects of extended practice on focus capacity and the processes of updating, forward access, and random access.

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Price, John M; Colflesh, Gregory J H; Cerella, John; Verhaeghen, Paul

2014-05-01

We investigated the effects of 10h of practice on variations of the N-Back task to investigate the processes underlying possible expansion of the focus of attention within working memory. Using subtractive logic, we showed that random access (i.e., Sternberg-like search) yielded a modest effect (a 50% increase in speed) whereas the processes of forward access (i.e., retrieval in order, as in a standard N-Back task) and updating (i.e., changing the contents of working memory) were executed about 5 times faster after extended practice. We additionally found that extended practice increased working memory capacity as measured by the size of the focus of attention for the forward-access task, but not for variations where probing was in random order. This suggests that working memory capacity may depend on the type of search process engaged, and that certain working-memory-related cognitive processes are more amenable to practice than others. Copyright © 2014 Elsevier B.V. All rights reserved.

Aspects of GPU perfomance in algorithms with random memory access

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Kashkovsky, Alexander V.; Shershnev, Anton A.; Vashchenkov, Pavel V.

2017-10-01

The numerical code for solving the Boltzmann equation on the hybrid computational cluster using the Direct Simulation Monte Carlo (DSMC) method showed that on Tesla K40 accelerators computational performance drops dramatically with increase of percentage of occupied GPU memory. Testing revealed that memory access time increases tens of times after certain critical percentage of memory is occupied. Moreover, it seems to be the common problem of all NVidia's GPUs arising from its architecture. Few modifications of the numerical algorithm were suggested to overcome this problem. One of them, based on the splitting the memory into "virtual" blocks, resulted in 2.5 times speed up.

Neutron detection using soft errors in dynamic Random Access Memories

International Nuclear Information System (INIS)

Darambara, D.G.; Spyrou, N.M.

1994-01-01

The purpose of this paper is to present results from experiments that have been performed to show the memory cycle time dependence of the soft errors produced by the interaction of alpha particles with dynamic random access memory devices, with a view to using these as position sensitive detectors. Furthermore, a preliminary feasibility study being carried out indicates the use of dynamic RAMs as neutron detectors by the utilization of (n, α) capture reactions in a Li converter placed on the top of the active area of the memory chip. ((orig.))

75 FR 44283 - In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same...

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2010-07-28

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-707] In the Matter of Certain Dynamic Random Access Memory Semiconductors and Products Containing Same, Including Memory Modules; Notice of a... importation of certain dynamic random access memory semiconductors and products containing same, including...

Complex dynamics of semantic memory access in reading.

Science.gov (United States)

Baggio, Giosué; Fonseca, André

2012-02-07

Understanding a word in context relies on a cascade of perceptual and conceptual processes, starting with modality-specific input decoding, and leading to the unification of the word's meaning into a discourse model. One critical cognitive event, turning a sensory stimulus into a meaningful linguistic sign, is the access of a semantic representation from memory. Little is known about the changes that activating a word's meaning brings about in cortical dynamics. We recorded the electroencephalogram (EEG) while participants read sentences that could contain a contextually unexpected word, such as 'cold' in 'In July it is very cold outside'. We reconstructed trajectories in phase space from single-trial EEG time series, and we applied three nonlinear measures of predictability and complexity to each side of the semantic access boundary, estimated as the onset time of the N400 effect evoked by critical words. Relative to controls, unexpected words were associated with larger prediction errors preceding the onset of the N400. Accessing the meaning of such words produced a phase transition to lower entropy states, in which cortical processing becomes more predictable and more regular. Our study sheds new light on the dynamics of information flow through interfaces between sensory and memory systems during language processing.

Visual inspection requirements for high-reliability random-access memories

International Nuclear Information System (INIS)

Andrade, A.; McHenery, J.

1981-09-01

Visual inspection requirements are given for random-access memories for deep-space satellite electronics. The requirements, based primarily on Military Standard 883B, are illustrated in the order of their manufacturing operation to clarify and facilitate inspection procedures

Accessibility versus accuracy in retrieving spatial memory: evidence for suboptimal assumed headings.

Science.gov (United States)

Yerramsetti, Ashok; Marchette, Steven A; Shelton, Amy L

2013-07-01

Orientation dependence in spatial memory has often been interpreted in terms of accessibility: Object locations are encoded relative to a reference orientation that affords the most accurate access to spatial memory. An open question, however, is whether people naturally use this "preferred" orientation whenever recalling the space. We tested this question by asking participants to locate buildings on a familiar campus from various imagined locations, without specifying the heading to be assumed. We then used these pointing judgments to infer the approximate heading participants assumed at each location. Surprisingly, each location showed a unique assumed heading that was consistent across participants and seemed to reflect episodic or visual properties of the space. This result suggests that although locations are encoded relative to a reference orientation, other factors may influence how people choose to access the stored information and whether they appeal to long-term spatial memory or other more sensory-based stores. PsycINFO Database Record (c) 2013 APA, all rights reserved.

Taxing working memory during retrieval of emotional memories does not reduce memory accessibility when cued with reminders

Directory of Open Access Journals (Sweden)

Kevin eVan Schie

2015-02-01

Full Text Available Earlier studies have shown that when individuals recall an emotional memory while simultaneously doing a demanding dual-task (e.g., playing Tetris, mental arithmetic, making eye movements, this reduces self-reported vividness and emotionality of the memory. These effects have been found up to one week later, but have largely been confined to self-report ratings. This study examined whether this dual-tasking intervention reduces memory performance (i.e., accessibility of emotional memories. Undergraduates (N = 60 studied word-image pairs and rated the retrieved image on vividness and emotionality when cued with the word. Then they viewed the cues and recalled the images with or without making eye movements. Finally, they re-rated the images on vividness and emotionality. Additionally, fragments from images from all conditions were presented and participants identified which fragment was paired earlier with which cue. Findings showed no effect of the dual-task manipulation on self-reported ratings and latency responses. Cued recall may not have been sufficient to elicit specific and continuous target retrieval for memory blurring to occur. The study demonstrates boundaries to the effects of the dual-tasking procedure.

The effects of enactment and intention accessibility on prospective memory performance.

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Schult, Janette C; Steffens, Melanie C

2017-05-01

The intention-superiority effect denotes faster response latencies to stimuli linked with a prospective memory task compared to stimuli linked with no prospective task or with a cancelled task. It is generally assumed that the increased accessibility of intention-related materials contributes to successful execution of prospective memory tasks at an appropriate opportunity. In two experiments we investigated the relationship between the intention-superiority effect and actual prospective memory performance under relatively realistic conditions. We also manipulated enactment versus observation encoding to further investigate the similarity in representations of enacted and to-be-enacted tasks. Additionally, Experiment 1 included a control condition to investigate the development of the intention-superiority effect over time. Participants were asked to perform prospective tasks at the end of the experiment to prepare the room for the next participant. They studied these preparatory tasks at the beginning of the experiment either by enacting them themselves or by observing the experimenter perform them. In Experiment 2, participants in a control condition did not intend to perform prospective tasks. We observed a smaller intention-superiority effect after enactment encoding than after observation encoding, but only if response latencies were assessed immediately before the prospective memory task. In addition, Experiment 2 suggested that the size of the intention-superiority effect is related to successful prospective memory performance, thus providing evidence for a functional relationship between accessibility and memory.

Artificial intelligence applications of fast optical memory access

Science.gov (United States)

Henshaw, P. D.; Todtenkopf, A. B.

The operating principles and performance of rapid laser beam-steering (LBS) techniques are reviewed and illustrated with diagrams; their applicability to fast optical-memory (disk) access is evaluated; and the implications of fast access for the design of expert systems are discussed. LBS methods examined include analog deflection (source motion, wavefront tilt, and phased arrays), digital deflection (polarization modulation, reflectivity modulation, interferometric switching, and waveguide deflection), and photorefractive LBS. The disk-access problem is considered, and typical LBS requirements are listed as 38,000 beam positions, rotational latency 25 ms, one-sector rotation time 1.5 ms, and intersector space 87 microsec. The value of rapid access for increasing the power of expert systems (by permitting better organization of blocks of information) is illustrated by summarizing the learning process of the MVP-FORTH system (Park, 1983).

Accessing information in working memory: Can the focus of attention grasp two elements at the same time?

NARCIS (Netherlands)

Oberauer, K.; Bialkova, S.E.

2009-01-01

Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a

Dynamic computing random access memory

International Nuclear Information System (INIS)

Traversa, F L; Bonani, F; Pershin, Y V; Di Ventra, M

2014-01-01

The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200–2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology. (paper)

Integrated Optical Content Addressable Memories (CAM and Optical Random Access Memories (RAM for Ultra-Fast Address Look-Up Operations

Directory of Open Access Journals (Sweden)

Christos Vagionas

2017-07-01

Full Text Available Electronic Content Addressable Memories (CAM implement Address Look-Up (AL table functionalities of network routers; however, they typically operate in the MHz regime, turning AL into a critical network bottleneck. In this communication, we demonstrate the first steps towards developing optical CAM alternatives to enable a re-engineering of AL memories. Firstly, we report on the photonic integration of Semiconductor Optical Amplifier-Mach Zehnder Interferometer (SOA-MZI-based optical Flip-Flop and Random Access Memories on a monolithic InP platform, capable of storing the binary prefix-address data-bits and the outgoing port information for next hop routing, respectively. Subsequently the first optical Binary CAM cell (B-CAM is experimentally demonstrated, comprising an InP Flip-Flop and a SOA-MZI Exclusive OR (XOR gate for fast search operations through an XOR-based bit comparison, yielding an error-free 10 Gb/s operation. This is later extended via physical layer simulations in an optical Ternary-CAM (T-CAM cell and a 4-bit Matchline (ML configuration, supporting a third state of the “logical X” value towards wildcard bits of network subnet masks. The proposed functional CAM and Random Access Memories (RAM sub-circuits may facilitate light-based Address Look-Up tables supporting search operations at 10 Gb/s and beyond, paving the way towards minimizing the disparity with the frantic optical transmission linerates, and fast re-configurability through multiple simultaneous Wavelength Division Multiplexed (WDM memory access requests.

Boosting the FM-Index on the GPU: Effective Techniques to Mitigate Random Memory Access.

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Chacón, Alejandro; Marco-Sola, Santiago; Espinosa, Antonio; Ribeca, Paolo; Moure, Juan Carlos

2015-01-01

The recent advent of high-throughput sequencing machines producing big amounts of short reads has boosted the interest in efficient string searching techniques. As of today, many mainstream sequence alignment software tools rely on a special data structure, called the FM-index, which allows for fast exact searches in large genomic references. However, such searches translate into a pseudo-random memory access pattern, thus making memory access the limiting factor of all computation-efficient implementations, both on CPUs and GPUs. Here, we show that several strategies can be put in place to remove the memory bottleneck on the GPU: more compact indexes can be implemented by having more threads work cooperatively on larger memory blocks, and a k-step FM-index can be used to further reduce the number of memory accesses. The combination of those and other optimisations yields an implementation that is able to process about two Gbases of queries per second on our test platform, being about 8 × faster than a comparable multi-core CPU version, and about 3 × to 5 × faster than the FM-index implementation on the GPU provided by the recently announced Nvidia NVBIO bioinformatics library.

Accessing Information in Working Memory: Can the Focus of Attention Grasp Two Elements at the Same Time?

Science.gov (United States)

Oberauer, Klaus; Bialkova, Svetlana

2009-01-01

Processing information in working memory requires selective access to a subset of working-memory contents by a focus of attention. Complex cognition often requires joint access to 2 items in working memory. How does the focus select 2 items? Two experiments with an arithmetic task and 1 with a spatial task investigate time demands for successive…

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

Science.gov (United States)

Han, Runze; Shen, Wensheng; Huang, Peng; Zhou, Zheng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

2018-04-01

A novel ternary content addressable memory (TCAM) design based on resistive random access memory (RRAM) is presented. Each TCAM cell consists of two parallel RRAM to both store and search for ternary data. The cell size of the proposed design is 8F2, enable a ∼60× cell area reduction compared with the conventional static random access memory (SRAM) based implementation. Simulation results also show that the search delay and energy consumption of the proposed design at the 64-bit word search are 2 ps and 0.18 fJ/bit/search respectively at 22 nm technology node, where significant improvements are achieved compared to previous works. The desired characteristics of RRAM for implementation of the high performance TCAM search chip are also discussed.

What versus where: Investigating how autobiographical memory retrieval differs when accessed with thematic versus spatial information.

Science.gov (United States)

Sheldon, Signy; Chu, Sonja

2017-09-01

Autobiographical memory research has investigated how cueing distinct aspects of a past event can trigger different recollective experiences. This research has stimulated theories about how autobiographical knowledge is accessed and organized. Here, we test the idea that thematic information organizes multiple autobiographical events whereas spatial information organizes individual past episodes by investigating how retrieval guided by these two forms of information differs. We used a novel autobiographical fluency task in which participants accessed multiple memory exemplars to event theme and spatial (location) cues followed by a narrative description task in which they described the memories generated to these cues. Participants recalled significantly more memory exemplars to event theme than to spatial cues; however, spatial cues prompted faster access to past memories. Results from the narrative description task revealed that memories retrieved via event theme cues compared to spatial cues had a higher number of overall details, but those recalled to the spatial cues were recollected with a greater concentration on episodic details than those retrieved via event theme cues. These results provide evidence that thematic information organizes and integrates multiple memories whereas spatial information prompts the retrieval of specific episodic content from a past event.

Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Directory of Open Access Journals (Sweden)

Weisheng Zhao

2016-01-01

Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

Recent Trends in Spintronics-Based Nanomagnetic Logic

Science.gov (United States)

Das, Jayita; Alam, Syed M.; Bhanja, Sanjukta

2014-09-01

With the growing concerns of standby power in sub-100-nm CMOS technologies, alternative computing techniques and memory technologies are explored. Spin transfer torque magnetoresistive RAM (STT-MRAM) is one such nonvolatile memory relying on magnetic tunnel junctions (MTJs) to store information. It uses spin transfer torque to write information and magnetoresistance to read information. In 2012, Everspin Technologies, Inc. commercialized the first 64Mbit Spin Torque MRAM. On the computing end, nanomagnetic logic (NML) is a promising technique with zero leakage and high data retention. In 2000, Cowburn and Welland first demonstrated its potential in logic and information propagation through magnetostatic interaction in a chain of single domain circular nanomagnetic dots of Supermalloy (Ni80Fe14Mo5X1, X is other metals). In 2006, Imre et al. demonstrated wires and majority gates followed by coplanar cross wire systems demonstration in 2010 by Pulecio et al. Since 2004 researchers have also investigated the potential of MTJs in logic. More recently with dipolar coupling between MTJs demonstrated in 2012, logic-in-memory architecture with STT-MRAM have been investigated. The architecture borrows the computing concept from NML and read and write style from MRAM. The architecture can switch its operation between logic and memory modes with clock as classifier. Further through logic partitioning between MTJ and CMOS plane, a significant performance boost has been observed in basic computing blocks within the architecture. In this work, we have explored the developments in NML, in MTJs and more recent developments in hybrid MTJ/CMOS logic-in-memory architecture and its unique logic partitioning capability.

Large Capacity of Conscious Access for Incidental Memories in Natural Scenes.

Science.gov (United States)

Kaunitz, Lisandro N; Rowe, Elise G; Tsuchiya, Naotsugu

2016-09-01

When searching a crowd, people can detect a target face only by direct fixation and attention. Once the target is found, it is consciously experienced and remembered, but what is the perceptual fate of the fixated nontarget faces? Whereas introspection suggests that one may remember nontargets, previous studies have proposed that almost no memory should be retained. Using a gaze-contingent paradigm, we asked subjects to visually search for a target face within a crowded natural scene and then tested their memory for nontarget faces, as well as their confidence in those memories. Subjects remembered up to seven fixated, nontarget faces with more than 70% accuracy. Memory accuracy was correlated with trial-by-trial confidence ratings, which implies that the memory was consciously maintained and accessed. When the search scene was inverted, no more than three nontarget faces were remembered. These findings imply that incidental memory for faces, such as those recalled by eyewitnesses, is more reliable than is usually assumed. © The Author(s) 2016.

75 FR 20564 - Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit...

Science.gov (United States)

2010-04-20

... DEPARTMENT OF COMMERCE International Trade Administration [C-580-851] Dynamic Random Access Memory Semiconductors from the Republic of Korea: Extension of Time Limit for Preliminary Results of Countervailing Duty... access memory semiconductors from the Republic of Korea, covering the period January 1, 2008 through...

Access time optimization of SRAM memory with statistical yield constraint

NARCIS (Netherlands)

Doorn, T.S.; Maten, ter E.J.W.; Di Bucchianico, A.; Beelen, T.G.J.; Janssen, H.H.J.M.

2012-01-01

A product may fail when design parameters are subject to large deviations. To guarantee yield one likes to determine bounds on the parameter range such that the fail probability P_fail is small. For Static Random Access Memory (SRAM) characteristics like Static Noise Margin and Read Current,

A Strategic Analysis in Dynamic Random Access Memory Industry in Taiwan

OpenAIRE

Chen, Yen-Chun

2009-01-01

The credit crisis and global economic recession have severely impacted on Integrated Circuit (IC) industry particularly in Dynamic Random Access Memory (DRAM) industry. The average selling price declined below the cost of chip and almost all memory producers are lack of cash flow. One of the global three 3 producers has been driven out of this industry and all Taiwanese DRAM vendors are facing to a dilemma on how they can survive through the economic recession and oversupply circumstance. Thi...

Shared random access memory resource for multiprocessor real-time systems

International Nuclear Information System (INIS)

Dimmler, D.G.; Hardy, W.H. II

1977-01-01

A shared random-access memory resource is described which is used within real-time data acquisition and control systems with multiprocessor and multibus organizations. Hardware and software aspects are discussed in a specific example where interconnections are done via a UNIBUS. The general applicability of the approach is also discussed

Remote direct memory access over datagrams

Science.gov (United States)

Grant, Ryan Eric; Rashti, Mohammad Javad; Balaji, Pavan; Afsahi, Ahmad

2014-12-02

A communication stack for providing remote direct memory access (RDMA) over a datagram network is disclosed. The communication stack has a user level interface configured to accept datagram related input and communicate with an RDMA enabled network interface card (NIC) via an NIC driver. The communication stack also has an RDMA protocol layer configured to supply one or more data transfer primitives for the datagram related input of the user level. The communication stack further has a direct data placement (DDP) layer configured to transfer the datagram related input from a user storage to a transport layer based on the one or more data transfer primitives by way of a lower layer protocol (LLP) over the datagram network.

Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.

Science.gov (United States)

Peng, Shouzhong; Wang, Mengxing; Yang, Hongxin; Zeng, Lang; Nan, Jiang; Zhou, Jiaqi; Zhang, Youguang; Hallal, Ali; Chshiev, Mairbek; Wang, Kang L; Zhang, Qianfan; Zhao, Weisheng

2015-12-11

Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven that a capping layer coating on CoFeB layer is essential to obtain a strong PMA. However, the physical mechanism of such effect remains unclear. In this paper, we investigate the origin of the PMA in MgO/CoFe/metallic capping layer structures by using a first-principles computation scheme. The trend of PMA variation with different capping materials agrees well with experimental results. We find that interfacial PMA in the three-layer structures comes from both the MgO/CoFe and CoFe/capping layer interfaces, which can be analyzed separately. Furthermore, the PMAs in the CoFe/capping layer interfaces are analyzed through resolving the magnetic anisotropy energy by layer and orbital. The variation of PMA with different capping materials is attributed to the different hybridizations of both d and p orbitals via spin-orbit coupling. This work can significantly benefit the research and development of nanoscale STT-MRAM.

Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

Science.gov (United States)

Seung, Hyun-Min; Kwon, Kyoung-Cheol; Lee, Gon-Sub; Park, Jea-Gun

2014-10-01

Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 105 s with a memory margin of 9.2 × 105, program/erase endurance cycles of >102 with a memory margin of 8.4 × 105, and bending-fatigue-free cycles of ˜1 × 103 with a memory margin (Ion/Ioff) of 3.3 × 105.

The special role of item-context associations in the direct-access region of working memory.

Science.gov (United States)

Campoy, Guillermo

2017-09-01

The three-embedded-component model of working memory (WM) distinguishes three representational states corresponding to three WM regions: activated long-term memory, direct-access region (DAR), and focus of attention. Recent neuroimaging research has revealed that access to the DAR is associated with enhanced hippocampal activity. Because the hippocampus mediates the encoding and retrieval of item-context associations, it has been suggested that this hippocampal activation is a consequence of the fact that item-context associations are particularly strong and accessible in the DAR. This study provides behavioral evidence for this view using an item-recognition task to assess the effect of non-intentional encoding and maintenance of item-location associations across WM regions. Five pictures of human faces were sequentially presented in different screen locations followed by a recognition probe. Visual cues immediately preceding the probe indicated the location thereof. When probe stimuli appeared in the same location that they had been presented within the memory set, the presentation of the cue was expected to elicit the activation of the corresponding WM representation through the just-established item-location association, resulting in faster recognition. Results showed this same-location effect, but only for items that, according to their serial position within the memory set, were held in the DAR.

Remote direct memory access

Science.gov (United States)

Archer, Charles J.; Blocksome, Michael A.

2012-12-11

Methods, parallel computers, and computer program products are disclosed for remote direct memory access. Embodiments include transmitting, from an origin DMA engine on an origin compute node to a plurality target DMA engines on target compute nodes, a request to send message, the request to send message specifying a data to be transferred from the origin DMA engine to data storage on each target compute node; receiving, by each target DMA engine on each target compute node, the request to send message; preparing, by each target DMA engine, to store data according to the data storage reference and the data length, including assigning a base storage address for the data storage reference; sending, by one or more of the target DMA engines, an acknowledgment message acknowledging that all the target DMA engines are prepared to receive a data transmission from the origin DMA engine; receiving, by the origin DMA engine, the acknowledgement message from the one or more of the target DMA engines; and transferring, by the origin DMA engine, data to data storage on each of the target compute nodes according to the data storage reference using a single direct put operation.

Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems.

Science.gov (United States)

Shehzad, Danish; Bozkuş, Zeki

2016-01-01

Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI) is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA) by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models.

Optimizing NEURON Simulation Environment Using Remote Memory Access with Recursive Doubling on Distributed Memory Systems

Directory of Open Access Journals (Sweden)

Danish Shehzad

2016-01-01

Full Text Available Increase in complexity of neuronal network models escalated the efforts to make NEURON simulation environment efficient. The computational neuroscientists divided the equations into subnets amongst multiple processors for achieving better hardware performance. On parallel machines for neuronal networks, interprocessor spikes exchange consumes large section of overall simulation time. In NEURON for communication between processors Message Passing Interface (MPI is used. MPI_Allgather collective is exercised for spikes exchange after each interval across distributed memory systems. The increase in number of processors though results in achieving concurrency and better performance but it inversely affects MPI_Allgather which increases communication time between processors. This necessitates improving communication methodology to decrease the spikes exchange time over distributed memory systems. This work has improved MPI_Allgather method using Remote Memory Access (RMA by moving two-sided communication to one-sided communication, and use of recursive doubling mechanism facilitates achieving efficient communication between the processors in precise steps. This approach enhanced communication concurrency and has improved overall runtime making NEURON more efficient for simulation of large neuronal network models.

Chemical insight into origin of forming-free resistive random-access memory devices

KAUST Repository

Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, Xixiang; Pey, K. L.

2011-01-01

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission

Nanostructure-property relations for phase-change random access memory (PCRAM) line cells

NARCIS (Netherlands)

Kooi, B. J.; Oosthoek, J. L. M.; Verheijen, M. A.; Kaiser, M.; Jedema, F. J.; Gravesteijn, D. J.

2012-01-01

Phase-change random access memory (PCRAM) cells have been studied extensively using electrical characterization and rather limited by detailed structure characterization. The combination of these two characterization techniques has hardly been exploited and it is the focus of the present work.

The accessibility of memory items in children’s working memory

OpenAIRE

Roome, Hannah; Towse, John

2016-01-01

This thesis investigates the processes and systems that support recall in working memory. In particular it seeks to apply ideas from the adult-based dual-memory framework (Unsworth & Engle, 2007b) that claims primary memory and secondary memory are independent contributors to working memory capacity. These two memory systems are described as domain-general processes that combine control of attention and basic memory abilities to retain information. The empirical contribution comprises five ex...

Materials and Physics Challenges for Spin Transfer Torque Magnetic Random Access Memories

Energy Technology Data Exchange (ETDEWEB)

Heinonen, O.

2014-10-05

Magnetic random access memories utilizing the spin transfer torque effect for writing information are a strong contender for non-volatile memories scalable to the 20 nm node, and perhaps beyond. I will here examine how these devices behave as the device size is scaled down from 70 nm size to 20 nm. As device sizes go below ~50 nm, the size becomes comparable to intrinsic magnetic length scales and the device behavior does not simply scale with size. This has implications for the device design and puts additional constraints on the materials in the device.

Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

International Nuclear Information System (INIS)

Cagliani, A; Kjær, D; Østerberg, F W; Hansen, O; Petersen, D H; Nielsen, P F

2017-01-01

The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R and D phase to the pilot production phase. This will require an improvement in the repeatability of the CIPT metrology technique. Here, we present an analytical model that can be used to simulate numerically the repeatability of a CIPT measurement for an arbitrary MTJ stack prior to any CIPT measurement. The model describes mathematically the main sources of error arising when a micro multi-electrode probe is used to perform a CIPT measurement. The numerically simulated repeatability values obtained on four different MTJ stacks are verified by experimental data and the model is used to optimize the choice of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification. (paper)

Administering an epoch initiated for remote memory access

Science.gov (United States)

Blocksome, Michael A; Miller, Douglas R

2012-10-23

Methods, systems, and products are disclosed for administering an epoch initiated for remote memory access that include: initiating, by an origin application messaging module on an origin compute node, one or more data transfers to a target compute node for the epoch; initiating, by the origin application messaging module after initiating the data transfers, a closing stage for the epoch, including rejecting any new data transfers after initiating the closing stage for the epoch; determining, by the origin application messaging module, whether the data transfers have completed; and closing, by the origin application messaging module, the epoch if the data transfers have completed.

A Memory-Based Programmable Logic Device Using Look-Up Table Cascade with Synchronous Static Random Access Memories

Science.gov (United States)

Nakamura, Kazuyuki; Sasao, Tsutomu; Matsuura, Munehiro; Tanaka, Katsumasa; Yoshizumi, Kenichi; Nakahara, Hiroki; Iguchi, Yukihiro

2006-04-01

A large-scale memory-technology-based programmable logic device (PLD) using a look-up table (LUT) cascade is developed in the 0.35-μm standard complementary metal oxide semiconductor (CMOS) logic process. Eight 64 K-bit synchronous SRAMs are connected to form an LUT cascade with a few additional circuits. The features of the LUT cascade include: 1) a flexible cascade connection structure, 2) multi phase pseudo asynchronous operations with synchronous static random access memory (SRAM) cores, and 3) LUT-bypass redundancy. This chip operates at 33 MHz in 8-LUT cascades at 122 mW. Benchmark results show that it achieves a comparable performance to field programmable gate array (FPGAs).

Adult age differences in memory in relation to availability and accessibility of knowledge-based schemas.

Science.gov (United States)

Arbuckle, T Y; Vanderleck, V F; Harsany, M; Lapidus, S

1990-03-01

Three experiments investigated whether, over adulthood, the use of schemas to process and remember new information increases (developmental shift hypothesis), decreases (production deficiency hypothesis) or remains constant (age-invariance hypothesis). Effects of schema access were studied by having young, middle-aged, and old music experts and nonexperts recall information that was relevant or irrelevant to music (Experiment 1) and by comparing young and old participants' memory for prose passages when they knew or did not know the subject of the passage (Experiments 2 and 3). In each case, schema access facilitated memory equally across age levels, supporting the age-invariance hypothesis and implying that the basic structures and operations of memory do not necessarily change with age. Possible limits on the independence of age and schema utilization were considered in relation to the conditions under which each of the two alternative hypotheses might hold.

Giant magneto-resistance devices

CERN Document Server

Hirota, Eiichi; Inomata, Koichiro

2002-01-01

This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

[Effects of construct accessibility and self-schema on person memory].

Science.gov (United States)

Kitamura, H

1991-10-01

The present study investigated the relationship among construct accessibility, self-schema and person memory. Three hundred and thirty-four subjects received 40 behavioral descriptions of a stimulus person, consisting of eight specific behaviors on each of five trait-dimensions. Subjects also rated personality traits of their acquaintances and themselves on nine-point bipolar scales and ranked the importance of the five trait-dimensions. Weights, which subjects assigned to each of the five dimensions, were calculated as indices of construct accessibility. Self-schema scores of each subject were also calculated based on his/her ratings. Multiple regression analyses indicated that the dimensional weights and self-schema scores were positively correlated with the recall performance of the descriptions of the stimulus person. The schematics recalled significantly more descriptions than the aschematics, whether their self-schema was positive or negative. Subjects who had positive self-schema showed higher construct accessibility than the aschematics. It was argued that the relationship between construct accessibility and self-schema might be affected by motivational factors such as self-esteem.

High thermal stability in W/MgO/CoFeB/W/CoFeB/W stacks via ultrathin W insertion with perpendicular magnetic anisotropy

Energy Technology Data Exchange (ETDEWEB)

Liu, Yi; Yu, Tao [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Zhengyong; Zhong, Huicai [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Khamis, Khamis Masoud [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Zhu, Kaigui, E-mail: kgzhu@buaa.edu.cn [School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Key Laboratory of Micro-Nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191 (China)

2016-07-15

The perpendicular magnetic anisotropy (PMA) of a series of top MgO/CoFeB/W stacks were studied. In these stacks, the thickness of CoFeB is limited in a range of 1.1–2.2 nm. It was found that the stack can still maintain PMA in a 1.9 nm thick CoFeB free layer. Besides, we investigated the thermal stability factor ∆ of a spin transfer torque magnetic random access memory (STT-MRAM) by inserting an ultra-thin W film of 0.8 nm between two CoFeB films. The result shows a clear PMA behavior for the samples with CoFeB thickness up to 2.5 nm, and an in-plane magnetic anisotropy (IMA) when the CoFeB is thicker than 2.5 nm. Moreover, the thermal stability factor ∆ of the CoFeB stack with W insertion is about 132 for a 50 nm size STT-MRAM device, which is remarkably improved compared to 112 for a sample without W insertion. Our results represent an alternative way to realize the endurance at high annealing temperature, high-density and high ∆ in STT-MRAM device by ultra-thin W insertion. - Highlights: • The MgO/CoFeB/W multilayer can still maintain PMA in a CoFeB thickness of 1.9 nm. • The sample with 2.5 nm thickness of CoFeB by W insertion can still maintain PMA. • The sample with W insertion can still maintain PMA until the annealing temperature as high as 350 °C. • The thermal stability factor ∆ of sample with W insertion could be increase to about 132 for a 50 nm size STT-MRAM device.

Optical interconnection network for parallel access to multi-rank memory in future computing systems.

Science.gov (United States)

Wang, Kang; Gu, Huaxi; Yang, Yintang; Wang, Kun

2015-08-10

With the number of cores increasing, there is an emerging need for a high-bandwidth low-latency interconnection network, serving core-to-memory communication. In this paper, aiming at the goal of simultaneous access to multi-rank memory, we propose an optical interconnection network for core-to-memory communication. In the proposed network, the wavelength usage is delicately arranged so that cores can communicate with different ranks at the same time and broadcast for flow control can be achieved. A distributed memory controller architecture that works in a pipeline mode is also designed for efficient optical communication and transaction address processes. The scaling method and wavelength assignment for the proposed network are investigated. Compared with traditional electronic bus-based core-to-memory communication, the simulation results based on the PARSEC benchmark show that the bandwidth enhancement and latency reduction are apparent.

SEU ground and flight data in static random access memories

International Nuclear Information System (INIS)

Liu, J.; Duan, J.L.; Hou, M.D.; Sun, Y.M.; Yao, H.J.; Mo, D.; Zhang, Q.X.; Wang, Z.G.; Jin, Y.F.; Cai, J.R.; Ye, Z.H.; Han, J.W.; Lin, Y.L.; Huang, Z.

2006-01-01

This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed on SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based on the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data

Nanoscale memory devices

International Nuclear Information System (INIS)

Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

2010-01-01

This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

Subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory for nonvolatile operation

Science.gov (United States)

Huh, In; Cheon, Woo Young; Choi, Woo Young

2016-04-01

A subthreshold-swing-adjustable tunneling-field-effect-transistor-based random-access memory (SAT RAM) has been proposed and fabricated for low-power nonvolatile memory applications. The proposed SAT RAM cell demonstrates adjustable subthreshold swing (SS) depending on stored information: small SS in the erase state ("1" state) and large SS in the program state ("0" state). Thus, SAT RAM cells can achieve low read voltage (Vread) with a large memory window in addition to the effective suppression of ambipolar behavior. These unique features of the SAT RAM are originated from the locally stored charge, which modulates the tunneling barrier width (Wtun) of the source-to-channel tunneling junction.

Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

Science.gov (United States)

Blocksome, Michael A.; Mamidala, Amith R.

2013-09-03

Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

The dynamics of access to groups in working memory.

Science.gov (United States)

Farrell, Simon; Lelièvre, Anna

2012-11-01

The finding that participants leave a pause between groups when attempting serial recall of temporally grouped lists has been taken to indicate access to a hierarchical representation of the list in working memory. An alternative explanation is that the dynamics of serial recall solely reflect output (rather than memorial) processes, with the temporal pattern at input merely suggesting a basis for the pattern of output buffering. Three experiments are presented here that disentangle input structure from output buffering in serial recall. In Experiment 1, participants were asked to recall a subset of visually presented digits from a temporally grouped list in their original order, where either within-group position or group position was kept constant. In Experiment 2, participants performed more standard serial recall of spoken digits, and input and output position were dissociated by asking participants to initiate recall from a post-cued position in the list. In Experiment 3, participants were asked to serially recall temporally grouped lists of visually presented digits where the grouping structure was unpredictable, under either articulatory suppression or silent conditions. The 3 experiments point to a tight linkage between implied memorial structures (i.e., the pattern of grouping at encoding) and the output structure implied by retrieval times and call into question a purely motoric account of the dynamics of recall.

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

International Nuclear Information System (INIS)

Massengill, L.W.

1996-01-01

A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed

Immigration, language proficiency, and autobiographical memories: Lifespan distribution and second-language access.

Science.gov (United States)

Esposito, Alena G; Baker-Ward, Lynne

2016-08-01

This investigation examined two controversies in the autobiographical literature: how cross-language immigration affects the distribution of autobiographical memories across the lifespan and under what circumstances language-dependent recall is observed. Both Spanish/English bilingual immigrants and English monolingual non-immigrants participated in a cue word study, with the bilingual sample taking part in a within-subject language manipulation. The expected bump in the number of memories from early life was observed for non-immigrants but not immigrants, who reported more memories for events surrounding immigration. Aspects of the methodology addressed possible reasons for past discrepant findings. Language-dependent recall was influenced by second-language proficiency. Results were interpreted as evidence that bilinguals with high second-language proficiency, in contrast to those with lower second-language proficiency, access a single conceptual store through either language. The final multi-level model predicting language-dependent recall, including second-language proficiency, age of immigration, internal language, and cue word language, explained ¾ of the between-person variance and (1)/5 of the within-person variance. We arrive at two conclusions. First, major life transitions influence the distribution of memories. Second, concept representation across multiple languages follows a developmental model. In addition, the results underscore the importance of considering language experience in research involving memory reports.

Ga-doped indium oxide nanowire phase change random access memory cells

International Nuclear Information System (INIS)

Jin, Bo; Lee, Jeong-Soo; Lim, Taekyung; Ju, Sanghyun; Latypov, Marat I; Kim, Hyoung Seop; Meyyappan, M

2014-01-01

Phase change random access memory (PCRAM) devices are usually constructed using tellurium based compounds, but efforts to seek other materials providing desirable memory characteristics have continued. We have fabricated PCRAM devices using Ga-doped In 2 O 3 nanowires with three different Ga compositions (Ga/(In+Ga) atomic ratio: 2.1%, 11.5% and 13.0%), and investigated their phase switching properties. The nanowires (∼40 nm in diameter) can be repeatedly switched between crystalline and amorphous phases, and Ga concentration-dependent memory switching behavior in the nanowires was observed with ultra-fast set/reset rates of 80 ns/20 ns, which are faster than for other competitive phase change materials. The observations of fast set/reset rates and two distinct states with a difference in resistance of two to three orders of magnitude appear promising for nonvolatile information storage. Moreover, we found that increasing the Ga concentration can reduce the power consumption and resistance drift; however, too high a level of Ga doping may cause difficulty in achieving the phase transition. (paper)

Encoding and Retrieval Processes Involved in the Access of Source Information in the Absence of Item Memory

Science.gov (United States)

Ball, B. Hunter; DeWitt, Michael R.; Knight, Justin B.; Hicks, Jason L.

2014-01-01

The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were "related" to the target item but never actually studied.…

ViSA: a neurodynamic model for visuo-spatial working memory, attentional blink, and conscious access.

Science.gov (United States)

Simione, Luca; Raffone, Antonino; Wolters, Gezinus; Salmas, Paola; Nakatani, Chie; Belardinelli, Marta Olivetti; van Leeuwen, Cees

2012-10-01

Two separate lines of study have clarified the role of selectivity in conscious access to visual information. Both involve presenting multiple targets and distracters: one simultaneously in a spatially distributed fashion, the other sequentially at a single location. To understand their findings in a unified framework, we propose a neurodynamic model for Visual Selection and Awareness (ViSA). ViSA supports the view that neural representations for conscious access and visuo-spatial working memory are globally distributed and are based on recurrent interactions between perceptual and access control processors. Its flexible global workspace mechanisms enable a unitary account of a broad range of effects: It accounts for the limited storage capacity of visuo-spatial working memory, attentional cueing, and efficient selection with multi-object displays, as well as for the attentional blink and associated sparing and masking effects. In particular, the speed of consolidation for storage in visuo-spatial working memory in ViSA is not fixed but depends adaptively on the input and recurrent signaling. Slowing down of consolidation due to weak bottom-up and recurrent input as a result of brief presentation and masking leads to the attentional blink. Thus, ViSA goes beyond earlier 2-stage and neuronal global workspace accounts of conscious processing limitations. PsycINFO Database Record (c) 2012 APA, all rights reserved.

Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

Science.gov (United States)

Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

2018-05-01

Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

Shape memory alloy fixator system for suturing tissue in minimal access surgery.

Science.gov (United States)

Xu, W; Frank, T G; Stockham, G; Cuschieri, A

1999-01-01

A new technique for suturing human tissue is described in which tissue closure is achieved by means of small fixators made from shape memory alloy. The aim of the development is to provide an alternative to thread suturing in minimal access surgery, which is quicker and requires less skill to achieve the required suturing quality. The design of the fixators is described in terms of the thermal shape recovery of shape memory alloy and a novel form of finite element analysis, which uses a nonlinear elastic element for the material property. Thermal analysis of the fixators and surrounding tissue is used to predict the temperature distribution during and after the application of electric current heating. This was checked in an in vitro experiment, which confirmed that deployment caused no detectable collateral damage to surrounding tissue. In vivo animal studies on the use of the shape memory alloy fixator for suturing tissue are ongoing to establish safety and healing effects.

Working memory capacity and controlled serial memory search.

Science.gov (United States)

Mızrak, Eda; Öztekin, Ilke

2016-08-01

The speed-accuracy trade-off (SAT) procedure was used to investigate the relationship between working memory capacity (WMC) and the dynamics of temporal order memory retrieval. High- and low-span participants (HSs, LSs) studied sequentially presented five-item lists, followed by two probes from the study list. Participants indicated the more recent probe. Overall, accuracy was higher for HSs compared to LSs. Crucially, in contrast to previous investigations that observed no impact of WMC on speed of access to item information in memory (e.g., Öztekin & McElree, 2010), recovery of temporal order memory was slower for LSs. While accessing an item's representation in memory can be direct, recovery of relational information such as temporal order information requires a more controlled serial memory search. Collectively, these data indicate that WMC effects are particularly prominent during high demands of cognitive control, such as serial search operations necessary to access temporal order information from memory. Copyright © 2016 Elsevier B.V. All rights reserved.

Experimental study on reactor neutron induced effect of deep sub-micron CMOS static random access memory

International Nuclear Information System (INIS)

Yang Shanchao; Guo Xiaoqiang; Lin Dongsheng; Chen Wei; Li Ruibin; Bai Xiaoyan; Wang Guizhen

2010-01-01

This paper investigates neutron irradiation effects of two kinds of commercial CMOS SRAM (static random access memory), of which one is 4M memory with the feature size of 0.25 μm and the other is 16M memory with the feature size of 0.13 μm. We designed a memory testing system of irradiation effects and performed the neutron irradiation experiment using the Xi'an Pulse Reactor. The upset of two kinds of memory cells did not present a threshold versus the increase of neutron fluence. The results showed that deep sub-micron SRAM behaved single-event upset (SEU) effect in neutron irradiation environment. The SEU effect of SRAM with smaller size and higher integrated level tends to upset is considered to be related to the reduction of the device feature size, and fewer charges for upsets of the memory cell also lead to the SEU effect. (authors)

Low-power resistive random access memory by confining the formation of conducting filaments

International Nuclear Information System (INIS)

Huang, Yi-Jen; Lee, Si-Chen; Shen, Tzu-Hsien; Lee, Lan-Hsuan; Wen, Cheng-Yen

2016-01-01

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO_x/silver nanoparticles/TiO_x/AlTiO_x, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistance state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO_x layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.

Multiple social identities and stereotype threat: imbalance, accessibility, and working memory.

Science.gov (United States)

Rydell, Robert J; McConnell, Allen R; Beilock, Sian L

2009-05-01

In 4 experiments, the authors showed that concurrently making positive and negative self-relevant stereotypes available about performance in the same ability domain can eliminate stereotype threat effects. Replicating past work, the authors demonstrated that introducing negative stereotypes about women's math performance activated participants' female social identity and hurt their math performance (i.e., stereotype threat) by reducing working memory. Moving beyond past work, it was also demonstrated that concomitantly presenting a positive self-relevant stereotype (e.g., college students are good at math) increased the relative accessibility of females' college student identity and inhibited their gender identity, eliminating attendant working memory deficits and contingent math performance decrements. Furthermore, subtle manipulations in questions presented in the demographic section of a math test eliminated stereotype threat effects that result from women reporting their gender before completing the test. This work identifies the motivated processes through which people's social identities became active in situations in which self-relevant stereotypes about a stigmatized group membership and a nonstigmatized group membership were available. In addition, it demonstrates the downstream consequences of this pattern of activation on working memory and performance. Copyright (c) 2009 APA, all rights reserved.

Main Memory

OpenAIRE

Boncz, Peter; Liu, Lei; Özsu, M.

2008-01-01

htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random Access Memory (RAM), to indicate that load/store instructions can access data at any location at the same cost, is usually implemented using DRAM chips, which are connected to the CPU and other per...

Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture

International Nuclear Information System (INIS)

Kim, Min-Hoi; Lee, Gyu Jeong; Keum, Chang-Min; Lee, Sin-Doo

2014-01-01

We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on–off ratio and the high switching on–off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM. (paper)

Random Access Memories: A New Paradigm for Target Detection in High Resolution Aerial Remote Sensing Images.

Science.gov (United States)

Zou, Zhengxia; Shi, Zhenwei

2018-03-01

We propose a new paradigm for target detection in high resolution aerial remote sensing images under small target priors. Previous remote sensing target detection methods frame the detection as learning of detection model + inference of class-label and bounding-box coordinates. Instead, we formulate it from a Bayesian view that at inference stage, the detection model is adaptively updated to maximize its posterior that is determined by both training and observation. We call this paradigm "random access memories (RAM)." In this paradigm, "Memories" can be interpreted as any model distribution learned from training data and "random access" means accessing memories and randomly adjusting the model at detection phase to obtain better adaptivity to any unseen distribution of test data. By leveraging some latest detection techniques e.g., deep Convolutional Neural Networks and multi-scale anchors, experimental results on a public remote sensing target detection data set show our method outperforms several other state of the art methods. We also introduce a new data set "LEarning, VIsion and Remote sensing laboratory (LEVIR)", which is one order of magnitude larger than other data sets of this field. LEVIR consists of a large set of Google Earth images, with over 22 k images and 10 k independently labeled targets. RAM gives noticeable upgrade of accuracy (an mean average precision improvement of 1% ~ 4%) of our baseline detectors with acceptable computational overhead.

Atomic crystals resistive switching memory

International Nuclear Information System (INIS)

Liu Chunsen; Zhang David Wei; Zhou Peng

2017-01-01

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non-volatile character is urgently needed. Resistive access random memory with 4F 2 cell size, switching in sub-nanosecond, cycling endurances of over 10 12 cycles, and information retention exceeding 10 years, is considered as promising next-generation non-volatile memory. However, the energy per bit is still too high to compete against static random access memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder the further scaling down. The variation of resistance between different devices and even various cycles in the same device, hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fine interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreover, the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory. (topical reviews)

Daily Access to Sucrose Impairs Aspects of Spatial Memory Tasks Reliant on Pattern Separation and Neural Proliferation in Rats

Science.gov (United States)

Reichelt, Amy C.; Morris, Margaret J.; Westbrook, Reginald Frederick

2016-01-01

High sugar diets reduce hippocampal neurogenesis, which is required for minimizing interference between memories, a process that involves "pattern separation." We provided rats with 2 h daily access to a sucrose solution for 28 d and assessed their performance on a spatial memory task. Sucrose consuming rats discriminated between objects…

Spectrotemporal processing drives fast access to memory traces for spoken words.

Science.gov (United States)

Tavano, A; Grimm, S; Costa-Faidella, J; Slabu, L; Schröger, E; Escera, C

2012-05-01

The Mismatch Negativity (MMN) component of the event-related potentials is generated when a detectable spectrotemporal feature of the incoming sound does not match the sensory model set up by preceding repeated stimuli. MMN is enhanced at frontocentral scalp sites for deviant words when compared to acoustically similar deviant pseudowords, suggesting that automatic access to long-term memory traces for spoken words contributes to MMN generation. Does spectrotemporal feature matching also drive automatic lexical access? To test this, we recorded human auditory event-related potentials (ERPs) to disyllabic spoken words and pseudowords within a passive oddball paradigm. We first aimed at replicating the word-related MMN enhancement effect for Spanish, thereby adding to the available cross-linguistic evidence (e.g., Finnish, English). We then probed its resilience to spectrotemporal perturbation by inserting short (20 ms) and long (120 ms) silent gaps between first and second syllables of deviant and standard stimuli. A significantly enhanced, frontocentrally distributed MMN to deviant words was found for stimuli with no gap. The long gap yielded no deviant word MMN, showing that prior expectations of word form limits in a given language influence deviance detection processes. Crucially, the insertion of a short gap suppressed deviant word MMN enhancement at frontocentral sites. We propose that spectrotemporal point-wise matching constitutes a core mechanism for fast serial computations in audition and language, bridging sensory and long-term memory systems. Copyright © 2012 Elsevier Inc. All rights reserved.

Encoding and retrieval processes involved in the access of source information in the absence of item memory.

Science.gov (United States)

Ball, B Hunter; DeWitt, Michael R; Knight, Justin B; Hicks, Jason L

2014-09-01

The current study sought to examine the relative contributions of encoding and retrieval processes in accessing contextual information in the absence of item memory using an extralist cuing procedure in which the retrieval cues used to query memory for contextual information were related to the target item but never actually studied. In Experiments 1 and 2, participants studied 1 category member (e.g., onion) from a variety of different categories and at test were presented with an unstudied category label (e.g., vegetable) to probe memory for item and source information. In Experiments 3 and 4, 1 member of unidirectional (e.g., credit or card) or bidirectional (e.g., salt or pepper) associates was studied, whereas the other unstudied member served as a test probe. When recall failed, source information was accessible only when items were processed deeply during encoding (Experiments 1 and 2) and when there was strong forward associative strength between the retrieval cue and target (Experiments 3 and 4). These findings suggest that a retrieval probe diagnostic of semantically related item information reinstantiates information bound in memory during encoding that results in reactivation of associated contextual information, contingent upon sufficient learning of the item itself and the association between the item and its context information.

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Directory of Open Access Journals (Sweden)

Mengxing Wang

2015-08-01

Full Text Available Magnetic tunnel junction (MTJ, which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.

Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments

Science.gov (United States)

Arita, Yutaka; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi

2003-07-01

Single-event upsets (SEUs) in a 0.4 μm 4 Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476 m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using 252Cf.

Materials selection for oxide-based resistive random access memories

International Nuclear Information System (INIS)

Guo, Yuzheng; Robertson, John

2014-01-01

The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO 2 , TiO 2 , Ta 2 O 5 , and Al 2 O 3 , to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta 2 O 5 RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy

Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

Science.gov (United States)

Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy

2018-05-01

Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In this paper, we investigated current induced switching (CIS) in ultrathin MgO barrier p-MTJs with dimension down to 50 nm. We obtained a CIS perpendicular tunnel magnetoresistance (p-TMR) of 123.9% and 7.0 Ω.μm2 resistance area product (RA) with a critical switching density of 1.4×1010 A/m2 in a 300 nm diameter junction. We observe that the extrinsic breakdown mechanism dominates, since the resistance of our p-MTJs decreases gradually with the increasing current. From the statistical analysis of differently sized p-MTJs, we observe that the breakdown voltage (Vb) of 1.4 V is 2 times the switching voltage (Vs) of 0.7 V and the breakdown process exhibits two different breakdown states, unsteady and steady state. Using Simmons' model, we find that the steady state is related with the barrier height of the MgO layer. Furthermore, our study suggests a more efficient method to evaluate the MTJ stability under high bias rather than measuring Vb. In conclusion, we developed well performant p-MTJs for the use in STT-MRAM and demonstrate the mechanism and control of breakdown in nano-scale ultrathin MgO barrier p-MTJs.

Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

Science.gov (United States)

Zhao, Zhengyang; Jamali, Mahdi; D'Souza, Noel; Zhang, Delin; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha; Wang, Jian-Ping

2016-08-01

Voltage control of magnetization via strain in piezoelectric/magnetostrictive systems is a promising mechanism to implement energy-efficient straintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using a local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

Random access dynamic memory device with capacity of 4Kx16 bytes

International Nuclear Information System (INIS)

Damatov, Ya.M.; Nikityuk, N.M.; Nomokonova, A.I.

1980-01-01

Random access dynamic memory devjce with capacity of 4Kx16 bytes is described. A block diagram, time diagrams and a general view of a unit are presented. Regimes os unit operation and ways of data regeneration are described. The analyser regime and a possibility of recording data from ''R'' buses of CAMAC dataway permit to use the unit efficiency in spectrometrical channels with a high intensity of experimental events arrival. The unit is developed on the basis of using large integral circuits

Twin-bit via resistive random access memory in 16 nm FinFET logic technologies

Science.gov (United States)

Shih, Yi-Hong; Hsu, Meng-Yin; King, Ya-Chin; Lin, Chrong Jung

2018-04-01

A via resistive random access memory (RRAM) cell fully compatible with the standard CMOS logic process has been successfully demonstrated for high-density logic nonvolatile memory (NVM) modules in advanced FinFET circuits. In this new cell, the transition metal layers are formed on both sides of a via, given two storage bits per via. In addition to its compact cell area (1T + 14 nm × 32 nm), the twin-bit via RRAM cell features a low operation voltage, a large read window, good data retention, and excellent cycling capability. As fine alignments between mask layers become possible, the twin-bit via RRAM cell is expected to be highly scalable in advanced FinFET technology.

Single event upset in static random access memories in atmospheric neutron environments

CERN Document Server

Arita, Y; Ogawa, I; Kishimoto, T

2003-01-01

Single-event upsets (SEUs) in a 0.4 mu m 4Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using sup 2 sup 5 sup 2 Cf. (author)

Direct access inter-process shared memory

Science.gov (United States)

Brightwell, Ronald B; Pedretti, Kevin; Hudson, Trammell B

2013-10-22

A technique for directly sharing physical memory between processes executing on processor cores is described. The technique includes loading a plurality of processes into the physical memory for execution on a corresponding plurality of processor cores sharing the physical memory. An address space is mapped to each of the processes by populating a first entry in a top level virtual address table for each of the processes. The address space of each of the processes is cross-mapped into each of the processes by populating one or more subsequent entries of the top level virtual address table with the first entry in the top level virtual address table from other processes.

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Science.gov (United States)

Zheng, Qi-Wen; Yu, Xue-Feng; Cui, Jiang-Wei; Guo, Qi; Ren, Di-Yuan; Cong, Zhong-Chao; Zhou, Hang

2014-10-01

Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

Single memory with multiple shift register functionality

NARCIS (Netherlands)

2010-01-01

The present invention relates to a memory device comprising a memory (EM) having at least two predetermined register memory sections addressable by respective address ranges AS1-ASz) and at least one access port (P1-PZ) for providing access to said memory (EM). Furthermore, access control means (A)

Design of ternary clocked adiabatic static random access memory

International Nuclear Information System (INIS)

Wang Pengjun; Mei Fengna

2011-01-01

Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions. (semiconductor integrated circuits)

Design of ternary clocked adiabatic static random access memory

Science.gov (United States)

Pengjun, Wang; Fengna, Mei

2011-10-01

Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions.

Materials selection for oxide-based resistive random access memories

Energy Technology Data Exchange (ETDEWEB)

Guo, Yuzheng; Robertson, John [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

2014-12-01

The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO{sub 2}, TiO{sub 2}, Ta{sub 2}O{sub 5}, and Al{sub 2}O{sub 3}, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta{sub 2}O{sub 5} RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.

Memory for Recently Accessed Visual Attributes

Science.gov (United States)

Jiang, Yuhong V.; Shupe, Joshua M.; Swallow, Khena M.; Tan, Deborah H.

2016-01-01

Recent reports have suggested that the attended features of an item may be rapidly forgotten once they are no longer relevant for an ongoing task (attribute amnesia). This finding relies on a surprise memory procedure that places high demands on declarative memory. We used intertrial priming to examine whether the representation of an item's…

The contribution to immediate serial recall of rehearsal, search speed, access to lexical memory, and phonological coding: an investigation at the construct level.

Science.gov (United States)

Tehan, Gerald; Fogarty, Gerard; Ryan, Katherine

2004-07-01

Rehearsal speed has traditionally been seen to be the prime determinant of individual differences in memory span. Recent studies, in the main using young children as the participant population, have suggested other contributors to span performance. In the present research, we used structural equation modeling to explore, at the construct level, individual differences in immediate serial recall with respect to rehearsal, search, phonological coding, and speed of access to lexical memory. We replicated standard short-term phenomena; we showed that the variables that influence children's span performance influence adult performance in the same way; and we showed that speed of access to lexical memory and facility with phonological codes appear to be more potent sources of individual differences in immediate memory than is either rehearsal speed or search factors.

Accessibility of observable and unobservable characteristics in autobiographical memories of recent and distant past.

Science.gov (United States)

Karylowski, Jerzy J; Mrozinski, Blazej

2017-02-01

Self-reports regarding how people visualise themselves during events that occurred in the past show that for events from the distant past individuals report assuming a more external perspective than for events from the recent past [Nigro, G., & Neisser, U. (1983). Point of view in personal memories. Cognitive Psychology, 15, 467-482; Pronin, E., & Ross, L. (2006). Temporal differences in trait self-ascription. Journal of Personality & Social Psychology, 90, 197-209]. Thus it appears that, with the passage of time, representations of self embodied in memories of past events lose their position of an insider and assume a more ordinary position of self as an object seen from the perspective of an outside observer. The purpose of the present experiment was to examine this shift using a performance-based measure of accessibility. Results showed that self-judgements regarding unobservable, covert characteristics were faster for recent-compared to more distant-autobiographical events. However, self-judgements regarding observable, overt characteristics were faster for more distant events. This suggests an accessibility-based mechanism underlying the shift from internal to the relatively more external perspective in forming self-images related to the distant past.

76 FR 2336 - Dynamic Random Access Memory Semiconductors From the Republic of Korea: Final Results of...

Science.gov (United States)

2011-01-13

... Semiconductors From the Republic of Korea: Final Results of Countervailing Duty Administrative Review AGENCY... administrative review of the countervailing duty order on dynamic random access memory semiconductors from the... to a change in the net subsidy rate. The final net subsidy rate for Hynix Semiconductor, Inc. is...

Enabling Highly-Scalable Remote Memory Access Programming with MPI-3 One Sided

Directory of Open Access Journals (Sweden)

Robert Gerstenberger

2014-01-01

Full Text Available Modern interconnects offer remote direct memory access (RDMA features. Yet, most applications rely on explicit message passing for communications albeit their unwanted overheads. The MPI-3.0 standard defines a programming interface for exploiting RDMA networks directly, however, it's scalability and practicability has to be demonstrated in practice. In this work, we develop scalable bufferless protocols that implement the MPI-3.0 specification. Our protocols support scaling to millions of cores with negligible memory consumption while providing highest performance and minimal overheads. To arm programmers, we provide a spectrum of performance models for all critical functions and demonstrate the usability of our library and models with several application studies with up to half a million processes. We show that our design is comparable to, or better than UPC and Fortran Coarrays in terms of latency, bandwidth and message rate. We also demonstrate application performance improvements with comparable programming complexity.

Emerging non-volatile memories

CERN Document Server

Hong, Seungbum; Wouters, Dirk

2014-01-01

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers' understanding of future trends in non-volatile memories.

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

International Nuclear Information System (INIS)

Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao; Zhou Hang

2014-01-01

Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device. (condensed matter: structural, mechanical, and thermal properties)

Finite temperature simulation studies of spin-flop magnetic random access memory devices

International Nuclear Information System (INIS)

Chui, S.T.; Chang, C.-R.

2006-01-01

Spin-flop structures are currently being developed for magnetic random access memory devices. We report simulation studies of this system. We found the switching involves an intermediate edge-pinned domain state, similar to that observed in the single layer case. This switching scenario is quite different from that based on the coherent rotation picture. A significant temperature dependence of the switching field is observed. Our result suggests that the interplane coupling and thus the switching field has to be above a finite threshold for the spin-flop switching to be better than conventional switching methods

Response of the Ubiquitin-Proteasome System to Memory Retrieval After Extended-Access Cocaine or Saline Self-Administration.

Science.gov (United States)

Werner, Craig T; Milovanovic, Mike; Christian, Daniel T; Loweth, Jessica A; Wolf, Marina E

2015-12-01

The ubiquitin-proteasome system (UPS) has been implicated in the retrieval-induced destabilization of cocaine- and fear-related memories in Pavlovian paradigms. However, nothing is known about its role in memory retrieval after self-administration of cocaine, an operant paradigm, or how the length of withdrawal from cocaine may influence retrieval mechanisms. Here, we examined UPS activity after an extended-access cocaine self-administration regimen that leads to withdrawal-dependent incubation of cue-induced cocaine craving. Controls self-administered saline. In initial experiments, memory retrieval was elicited via a cue-induced seeking/retrieval test on withdrawal day (WD) 50-60, when craving has incubated. We found that retrieval of cocaine- and saline-associated memories produced similar increases in polyubiquitinated proteins in the nucleus accumbens (NAc), compared with rats that did not undergo a seeking/retrieval test. Measures of proteasome catalytic activity confirmed similar activation of the UPS after retrieval of saline and cocaine memories. However, in a subsequent experiment in which testing was conducted on WD1, proteasome activity in the NAc was greater after retrieval of cocaine memory than saline memory. Analysis of other brain regions confirmed that effects of cocaine memory retrieval on proteasome activity, relative to saline memory retrieval, depend on withdrawal time. These results, combined with prior studies, suggest that the relationship between UPS activity and memory retrieval depends on training paradigm, brain region, and time elapsed between training and retrieval. The observation that mechanisms underlying cocaine memory retrieval change depending on the age of the memory has implications for development of memory destabilization therapies for cue-induced relapse in cocaine addicts.

Fast, Accurate Memory Architecture Simulation Technique Using Memory Access Characteristics

OpenAIRE

小野, 貴継; 井上, 弘士; 村上, 和彰

2007-01-01

This paper proposes a fast and accurate memory architecture simulation technique. To design memory architecture, the first steps commonly involve using trace-driven simulation. However, expanding the design space makes the evaluation time increase. A fast simulation is achieved by a trace size reduction, but it reduces the simulation accuracy. Our approach can reduce the simulation time while maintaining the accuracy of the simulation results. In order to evaluate validity of proposed techniq...

A Time-predictable Memory Network-on-Chip

DEFF Research Database (Denmark)

Schoeberl, Martin; Chong, David VH; Puffitsch, Wolfgang

2014-01-01

To derive safe bounds on worst-case execution times (WCETs), all components of a computer system need to be time-predictable: the processor pipeline, the caches, the memory controller, and memory arbitration on a multicore processor. This paper presents a solution for time-predictable memory...... arbitration and access for chip-multiprocessors. The memory network-on-chip is organized as a tree with time-division multiplexing (TDM) of accesses to the shared memory. The TDM based arbitration completely decouples processor cores and allows WCET analysis of the memory accesses on individual cores without...

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

The content of visual working memory alters processing of visual input prior to conscious access: Evidence from pupillometry

NARCIS (Netherlands)

Gayet, S.; Paffen, C.L.E.; Guggenmos, M.; Sterzer, P.; Stigchel, S. van der

2017-01-01

Visual working memory (VWM) allows for keeping relevant visual information available after termination of its sensory input. Storing information in VWM, however, affects concurrent conscious perception of visual input: initially suppressed visual input gains prioritized access to consciousness when

Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

Science.gov (United States)

Yang, Xiang; Lu, Yang; Lee, Jongho; Chen, I.-Wei

2016-01-01

Tuning low resistance state is crucial for resistance random access memory (RRAM) that aims to achieve optimal read margin and design flexibility. By back-to-back stacking two nanometallic bipolar RRAMs with different thickness into a complementary structure, we have found that its low resistance can be reliably tuned over several orders of magnitude. Such high tunability originates from the exponential thickness dependence of the high resistance state of nanometallic RRAM, in which electron wave localization in a random network gives rise to the unique scaling behavior. The complementary nanometallic RRAM provides electroforming-free, multi-resistance-state, sub-100 ns switching capability with advantageous characteristics for memory arrays.

Tuning resistance states by thickness control in an electroforming-free nanometallic complementary resistance random access memory

International Nuclear Information System (INIS)

Yang, Xiang; Lu, Yang; Lee, Jongho; Chen, I-Wei

2016-01-01

Tuning low resistance state is crucial for resistance random access memory (RRAM) that aims to achieve optimal read margin and design flexibility. By back-to-back stacking two nanometallic bipolar RRAMs with different thickness into a complementary structure, we have found that its low resistance can be reliably tuned over several orders of magnitude. Such high tunability originates from the exponential thickness dependence of the high resistance state of nanometallic RRAM, in which electron wave localization in a random network gives rise to the unique scaling behavior. The complementary nanometallic RRAM provides electroforming-free, multi-resistance-state, sub-100 ns switching capability with advantageous characteristics for memory arrays

Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator

Science.gov (United States)

Nishikata, Daisuke; Ali, Mohammad Alimudin Bin Mohd; Hosoda, Kento; Matsumoto, Hiroshi; Nakamura, Kazuyuki

2018-04-01

A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors.

Tunnel junctions with multiferroic barriers

Science.gov (United States)

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Structural analysis of anodic porous alumina used for resistive random access memory

International Nuclear Information System (INIS)

Lee, Jeungwoo; Nigo, Seisuke; Kato, Seiichi; Kitazawa, Hideaki; Kido, Giyuu; Nakano, Yoshihiro

2010-01-01

Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.

The manufacture of system for testing static random access memory radiation effect

International Nuclear Information System (INIS)

Chen Rui; Yang Chen

2008-01-01

Space radiation effects will lead to single event upset, event latch up and other phenomena in SRAM devices. This paper introduces the hardware, software composition and related testing technology of SRAM radiation effect testing device. Through to the SRAM chip current detection and power protection, it has solved the SRAM chip damage question in the SRAM experiment. It has accessed to the expected experimental data by using the device in different source of radiation conducted on SRAM Experimental study of radiation effects. It provides important references in the assessment of operational life and reinforcement of the memory carried in the satellites. (authors)

An 'ADC-Memory' system based on a new principle in data access

International Nuclear Information System (INIS)

Pan Dajing; Wu Yongqing; Wang Shibo

1990-01-01

A new kind of 'ADC-Memory' (ADC-M) with real time correction of counting loss in dead time is now used in a multiuser data acquisition and processing system based on DUAL/68000 microcomputer. In data access, it replaces the 'DMA + 1' in classical MCA with the new method 'DMA + N', where N is weight factor of correction. The new method is based on the principle of virtual pulse generator. This method is superior to the correction by the software because the correction needn't take the computer time. Thus, this ADC-M can be used in the counting of high rate pulses

On the interplay between working memory consolidation and attentional selection in controlling conscious access : Parallel processing at a cost-a comment on 'The interplay of attention and consciousness in visual search, attentional blink and working memory consolidation'

NARCIS (Netherlands)

Wyble, Brad; Bowman, Howard; Nieuwenstein, Mark

On the interplay between working memory consolidation and attentional selection in controlling conscious access: parallel processing at a cost-a comment on 'The interplay of attention and consciousness in visual search, attentional blink and working memory consolidation'

NUMA obliviousness through memory mapping

NARCIS (Netherlands)

Gawade, M.; Kersten, M.; Pandis, I.; Kersten, M.

2015-01-01

With the rise of multi-socket multi-core CPUs a lot of effort is being put into how to best exploit their abundant CPU power. In a shared memory setting the multi-socket CPUs are equipped with their own memory module, and access memory modules across sockets in a non-uniform access pattern (NUMA).

A novel multiplexer-based structure for random access memory cell in quantum-dot cellular automata

Science.gov (United States)

Naji Asfestani, Mazaher; Rasouli Heikalabad, Saeed

2017-09-01

Quantum-dot cellular automata (QCA) is a new technology in scale of nano and perfect replacement for CMOS circuits in the future. Memory is one of the basic components in any digital system, so designing the random access memory (RAM) with high speed and optimal in QCA is important. In this paper, by employing the structure of multiplexer, a novel RAM cell architecture is proposed. The proposed architecture is implemented without the coplanar crossover approach. The proposed architecture is simulated using the QCADesigner version 2.0.3 and QCAPro. The simulation results demonstrate that the proposed QCA RAM architecture has the best performance in terms of delay, circuit complexity, area, cell count and energy consumption in comparison with other QCA RAM architectures.

Study of magnetization switching for MRAM based memory technologies

Science.gov (United States)

Pham, Huy

Amphibian alkaloids are attractive targets for synthesis due to their biological activity. An important class of amphibian alkaloids is the 2,5-disubstituted pyrrolidine-based family of compounds. There are many synthetic approaches for the preparation of the trans-2,5-disubstituted pyrrolidines, but methods for the construction of the cis-2,5-pyrrolidines are limited. Therefore, it was desired to develop an enantioselective approach for the preparation of cis-2,5-disubsituted pyrrolidines. (+)-Tropin-2-one derived from cocaine was used as starting material to exploit the inherent stereochemistry for construction of the cis-pyrrolidine ring. This permitted the unequivocal assignment of the absolute configuration of the target pyrrolidine. The structurally simple pyrrolidine alkaloid, 225H, was selected as a target to develop a general synthetic approach. The enantioselective synthesis of 225H was achieved in nine steps and good overall yield. The search for potent cannabinoid receptor partial agonist ligands as potential marijuana addiction therapeutic agents has led to an investigation of the synthesis of diaryl ether hybrid analogues of BAY 59-3074. A series of 2-(3-alkyl-5-hydroxyphenoxy)-6-(trifluoromethyl)benzonitriles, 3-(2-cyano-3-(trifluoromethyl)phenoxy)phenylalkanoates, and (3-(benzyloxy)phenoxy)-6-(trifluoromethyl)benzonitriles were synthesized and evaluated in vitro for CB1 affinity. The olivetol diaryl ether analogue was the most potent ligand of the alkyl series, but the diaryl ester analogues exhibited modest affinity for CB1 receptors. The most potent compound of the series was the 2-(3-(benzyloxy)phenoxy)-6-(trifluoromethyl)benzonitrile. Keywords. amphibian alkaloids, enantioselective synthesis, pyrrolidine, cannabinoid receptor, marijuana.

Radiation Dosimetry Using Three-Dimensional Optical Random Access Memories

International Nuclear Information System (INIS)

Moscovitch, M.

2001-01-01

The ability to determine particle type and energy plays an important role in the dosimetry of heavy charged particles (HCP) and neutrons. A new approach to radiation dosimetry is presented, which is shown to be capable of particle type and energy discrimination. This method is based on utilizing radiation induced changes in the digital information stored on three-dimensional optical random access memories (3D ORAM). 3D ORAM is a small cube (a few mm 3 ) composed of poly(methyl methacrylate) doped with a photochromic dye, and it was originally proposed as a memory device in high speed parallel computers. A Nd:YAG laser system is used to write and read binary information (bits) on the ORAM, which functions as a charged particle detector. Both the read and the write processes use two laser beams that simultaneously strike the material to cause a color change at their intersection (similar to the darkening of light-sensitive sunglasses when exposed to sunlight.) The laser produces color changes in the ORAM, which then reverts to the original color (''bit-flips'') at sites where energy is deposited from interaction with incident HCP or neutron-recoil protons. The feasibility of this approach was demonstrated both theoretically and experimentally. Calculations based on track structure theory (TST) predict that when HCP interact with the ORAM material, the local energy deposition is capable of inducing measurable ''bit-flips''. These predictions were recently confirmed experimentally using two types of ORAM systems, one based on spirobenzopyran and the other on anthracene, as the photochromic dyes

Radiation dosimetry using three-dimensional optical random access memories

International Nuclear Information System (INIS)

Moscovitch, M.; Phillips, G.W.; Cullum, B.M.; Mobley, J.; Bogard, J.S.; Emfietzoglou, D.; Vo-Dinh, T.

2002-01-01

The ability to determine particle type and energy plays an important role in the dosimetry of heavy charged particles (HCP) and neutrons. A new approach to radiation dosimetry is presented, which is shown to be capable of particle type and energy discrimination. This method is based on utilising radiation induced changes in the digital information stored on three-dimensional optical random access memories (3D ORAM). 3D ORAM is a small cube (a few mm 3 ) composed of poly(methyl methacrylate) doped with a photochromic dye, and it was originally proposed as a memory device in high speed parallel computers. A Nd:YAG laser system is used to write and read binary information (bits) on the ORAM, which functions as a charged particle detector. Both the read and the write processes use two laser beams that simultaneously strike the material to cause a colour change at their intersection (similar to the darkening of light-sensitive sunglasses when exposed to sunlight). The laser produces colour changes in the ORAM, which then reverts to the original colour ('bit-flips') at sites where energy is deposited from interaction with incident HCP or neutron-recoil protons. The feasibility of this approach was demonstrated both theoretically and experimentally. Calculations based on track structure theory predict that when HCP interact with the ORAM material, the local energy deposition is capable of inducing measurable 'bit-flips'. These predictions were recently confirmed experimentally using two types of ORAM systems, one based on spirobenzopyran and the other on anthracene, as the photochromic dyes. (author)

A model for Intelligent Random Access Memory architecture (IRAM) cellular automata algorithms on the Associative String Processing machine (ASTRA)

CERN Document Server

Rohrbach, F; Vesztergombi, G

1997-01-01

In the near future, the computer performance will be completely determined by how long it takes to access memory. There are bottle-necks in memory latency and memory-to processor interface bandwidth. The IRAM initiative could be the answer by putting Processor-In-Memory (PIM). Starting from the massively parallel processing concept, one reached a similar conclusion. The MPPC (Massively Parallel Processing Collaboration) project and the 8K processor ASTRA machine (Associative String Test bench for Research \\& Applications) developed at CERN \\cite{kuala} can be regarded as a forerunner of the IRAM concept. The computing power of the ASTRA machine, regarded as an IRAM with 64 one-bit processors on a 64$\\times$64 bit-matrix memory chip machine, has been demonstrated by running statistical physics algorithms: one-dimensional stochastic cellular automata, as a simple model for dynamical phase transitions. As a relevant result for physics, the damage spreading of this model has been investigated.

Surface effects of electrode-dependent switching behavior of resistive random-access memory

KAUST Repository

Ke, Jr Jian

2016-09-26

The surface effects of ZnO-based resistive random-access memory (ReRAM) were investigated using various electrodes. Pt electrodes were found to have better performance in terms of the device\\'s switching functionality. A thermodynamic model of the oxygen chemisorption process was proposed to explain this electrode-dependent switching behavior. The temperature-dependent switching voltage demonstrates that the ReRAM devices fabricated with Pt electrodes have a lower activation energy for the chemisorption process, resulting in a better resistive switching performance. These findings provide an in-depth understanding of electrode-dependent switching behaviors and can serve as design guidelines for future ReRAM devices.

Random access memory immune to single event upset using a T-resistor

Science.gov (United States)

Ochoa, Jr., Agustin

1989-01-01

In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

Development of measurement system for radiation effect on static random access memory based field programmable gate array

International Nuclear Information System (INIS)

Yao Zhibin; He Baoping; Zhang Fengqi; Guo Hongxia; Luo Yinhong; Wang Yuanming; Zhang Keying

2009-01-01

Based on the detailed investigation in field programmable gate array(FPGA) radiation effects theory, a measurement system for radiation effects on static random access memory(SRAM)-based FPGA was developed. The testing principle of internal memory, function and power current was introduced. The hardware and software implement means of system were presented. Some important parameters for radiation effects on SRAM-based FPGA, such as configuration RAM upset section, block RAM upset section, function fault section and single event latchup section can be gained with this system. The transmission distance of the system can be over 50 m and the maximum number of tested gates can reach one million. (authors)

Evaluation of Data Retention Characteristics for Ferroelectric Random Access Memories (FRAMs)

Science.gov (United States)

Sharma, Ashok K.; Teverovsky, Alexander

2001-01-01

Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

A radiation-hardened 1K-bit dielectrically isolated random access memory

International Nuclear Information System (INIS)

Sandors, T.J.; Boarman, J.W.; Kasten, A.J.; Wood, G.M.

1982-01-01

Dielectric Isolation has been used for many years as the bipolar technology for latch-up free, radiation hardened integrated circuits in strategic systems. The state-of-the-art up to this point has been the manufacture of MSI functions containing a maximum of several hundred isolated components. This paper discusses a 1024 Bit Random Access Memory chip containing over 4000 dielectrically isolated components which has been designed for strategic radiation environments. The process utilized and the circuit design of the 1024 Bit RAM have been previously discussed. The techniques used are similar to those employed for the MX digital integrated circuits except for specific items required to make this a true LSI technology. These techniques, along with electrical and radiation data for the RAM, are presented

High density submicron magnetoresistive random access memory (invited)

Science.gov (United States)

Tehrani, S.; Chen, E.; Durlam, M.; DeHerrera, M.; Slaughter, J. M.; Shi, J.; Kerszykowski, G.

1999-04-01

Various giant magnetoresistance material structures were patterned and studied for their potential as memory elements. The preferred memory element, based on pseudo-spin valve structures, was designed with two magnetic stacks (NiFeCo/CoFe) of different thickness with Cu as an interlayer. The difference in thickness results in dissimilar switching fields due to the shape anisotropy at deep submicron dimensions. It was found that a lower switching current can be achieved when the bits have a word line that wraps around the bit 1.5 times. Submicron memory elements integrated with complementary metal-oxide-semiconductor (CMOS) transistors maintained their characteristics and no degradation to the CMOS devices was observed. Selectivity between memory elements in high-density arrays was demonstrated.

Selective memory retrieval can impair and improve retrieval of other memories.

Science.gov (United States)

Bäuml, Karl-Heinz T; Samenieh, Anuscheh

2012-03-01

Research from the past decades has shown that retrieval of a specific memory (e.g., retrieving part of a previous vacation) typically attenuates retrieval of other memories (e.g., memories for other details of the event), causing retrieval-induced forgetting. More recently, however, it has been shown that retrieval can both attenuate and aid recall of other memories (K.-H. T. Bäuml & A. Samenieh, 2010). To identify the circumstances under which retrieval aids recall, the authors examined retrieval dynamics in listwise directed forgetting, context-dependent forgetting, proactive interference, and in the absence of any induced memory impairment. They found beneficial effects of selective retrieval in listwise directed forgetting and context-dependent forgetting but detrimental effects in all the other conditions. Because context-dependent forgetting and listwise directed forgetting arguably reflect impaired context access, the results suggest that memory retrieval aids recall of memories that are subject to impaired context access but attenuates recall in the absence of such circumstances. The findings are consistent with a 2-factor account of memory retrieval and suggest the existence of 2 faces of memory retrieval. 2012 APA, all rights reserved

Neutron detection using soft errors in dynamic random access memories

International Nuclear Information System (INIS)

Darambara, D.G.; Spyrou, N.M.

1992-01-01

The fact that energetic alpha particles have been observed to be capable of inducing single-event upsets in integrated circuit memories has become a topic of considerable interest in the past few years. One recognized difficulty with dynamic random access memory devices (dRAMs) is that the alpha-particle 'contamination' present within the dRAM encapsulating material interact sufficiently as to corrupt stored data. The authors essentially utilized the fact that these corruptions may be induced in dRAMs by the interaction of charged particles with the chip of the dRAM itself as a basis of a hardware system for neutron detection with a view to applications in neutron imaging and elemental analysis. The design incorporates a bank of dRAMs on which the particles are incident. Initially, these particles were alpha particles from an appropriate alpha-emitting source employed to assess system parameters. The sensitivity of the device to logic state upsets by ionizing radiation is a function of design and technology parameters, inducing storage node area, node capacitance, operating voltage, minority carrier lifetime, electric fields pattern in the bulk silicon, and specific device geometry. The soft error rate of the device in a given package depends on the flux of alphas, the energy spectrum, the distribution of incident angles, the target area, the total stored charge, the collection efficiency, the cell geometry, the supply voltage, the cycle and refreshing time, and the noise margin

Nonvolatile memory design magnetic, resistive, and phase change

CERN Document Server

Li, Hai

2011-01-01

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances,

Information matching the content of visual working memory is prioritized for conscious access.

Science.gov (United States)

Gayet, Surya; Paffen, Chris L E; Van der Stigchel, Stefan

2013-12-01

Visual working memory (VWM) is used to retain relevant information for imminent goal-directed behavior. In the experiments reported here, we found that VWM helps to prioritize relevant information that is not yet available for conscious experience. In five experiments, we demonstrated that information matching VWM content reaches visual awareness faster than does information not matching VWM content. Our findings suggest a functional link between VWM and visual awareness: The content of VWM is recruited to funnel down the vast amount of sensory input to that which is relevant for subsequent behavior and therefore requires conscious access.

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

International Nuclear Information System (INIS)

Xiao Yao; Guo Hong-Xia; Zhang Feng-Qi; Zhao Wen; Wang Yan-Ping; Zhang Ke-Ying; Ding Li-Li; Luo Yin-Hong; Wang Yuan-Ming; Fan Xue

2014-01-01

Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. (interdisciplinary physics and related areas of science and technology)

Chemical insight into origin of forming-free resistive random-access memory devices

KAUST Repository

Wu, X.

2011-09-29

We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.

Main Memory

NARCIS (Netherlands)

P.A. Boncz (Peter); L. Liu (Lei); M. Tamer Özsu

2008-01-01

htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random

Fast memory with direct access for nuclear physics

International Nuclear Information System (INIS)

Alexandre, B.; Riou, C.; Veler, J.C.

1967-07-01

This memory with thin ferromagnetic layers initially devoted to code the spatial position of sparkles in a sonic chamber must allow to give a more general interest in nuclear physics. We study the organisation of the memory and we present a summary of its technical characteristics [fr

Memory, microprocessor, and ASIC

CERN Document Server

Chen, Wai-Kai

2003-01-01

System Timing. ROM/PROM/EPROM. SRAM. Embedded Memory. Flash Memories. Dynamic Random Access Memory. Low-Power Memory Circuits. Timing and Signal Integrity Analysis. Microprocessor Design Verification. Microprocessor Layout Method. Architecture. ASIC Design. Logic Synthesis for Field Programmable Gate Array (EPGA) Technology. Testability Concepts and DFT. ATPG and BIST. CAD Tools for BIST/DFT and Delay Faults.

Taxing Working Memory during Retrieval of Emotional Memories Does Not Reduce Memory Accessibility When Cued with Reminders

NARCIS (Netherlands)

van Schie, Kevin; Engelhard, Iris M; van den Hout, Marcel A

2015-01-01

Earlier studies have shown that when individuals recall an emotional memory while simultaneously doing a demanding dual-task [e.g., playing Tetris, mental arithmetic, making eye movements (EM)], this reduces self-reported vividness and emotionality of the memory. These effects have been found up to

Overview of radiation effects on emerging non-volatile memory technologies

Directory of Open Access Journals (Sweden)

Fetahović Irfan S.

2017-01-01

Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

International Nuclear Information System (INIS)

Huang Da; Wu Jun-Jie; Tang Yu-Hua

2013-01-01

With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor has brought much attention to this study. Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are presented. We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms, which are applied to explain their resistive switchings

A random access memory immune to single event upset using a T-Resistor

Science.gov (United States)

Ochoa, A. Jr.

1987-10-28

In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

Memory states in small arrays of Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Braiman, Yehuda [ORNLOak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computer Science and Mathematics Division, Computing and Computational Science Directorate; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Mechanical, Aerospace, and Biomedical Engineering; Neschke, Brendan [ORNLOak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computer Science and Mathematics Division, Computing and Computational Science Directorate; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Mechanical, Aerospace, and Biomedical Engineering; Nair, Niketh S. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computer Science and Mathematics Division, Computing and Computational Science Directorate; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Mechanical, Aerospace, and Biomedical Engineering; Imam, Neena [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computing and Computational Science Directorat; Glowinski, R. [Univ. of Houston, TX (United States). Dept. of Mathematics

2017-11-30

Here, we study memory states of a circuit consisting of a small inductively coupled Josephson junction array and introduce basic (write, read, and reset) memory operations logics of the circuit. The presented memory operation paradigm is fundamentally different from conventional single quantum flux operation logics. We calculate stability diagrams of the zero-voltage states and outline memory states of the circuit. We also calculate access times and access energies for basic memory operations.

Low-energy neutron-induced single-event upsets in static random access memory

International Nuclear Information System (INIS)

Guo Xiaoqiang; Guo Hongxia; Wang Guizhen; Ling Dongsheng; Chen Wei; Bai Xiaoyan; Yang Shanchao; Liu Yan

2009-01-01

The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size(from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi'an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM's feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons. (authors)

Affect, accessibility of material in memory, and behavior: a cognitive loop?

Science.gov (United States)

Isen, A M; Shalker, T E; Clark, M; Karp, L

1978-01-01

Two studies investigated the effect of good mood on cognitive processes. In the first study, conducted in a shopping mall, a positive feeling state was induced by giving subjects a free gift, and good mood, thus induced, was found to improve subjects' evaluations of the performance and service records of products they owned. In the second study, in which affect was induced by having subjects win or lose a computer game in a laboratory setting, subjects who had won the game were found to be better able to recall positive material in memory. The results of the two studies are discussed in terms of the effect that feelings have on accessibility of cognitions. In addition, the nature of affect and the relationship between good mood and behavior (such as helping) are discussed in terms of this proposed cognitive process.

Stream specificity and asymmetries in feature binding and content-addressable access in visual encoding and memory.

Science.gov (United States)

Huynh, Duong L; Tripathy, Srimant P; Bedell, Harold E; Ögmen, Haluk

2015-01-01

Human memory is content addressable-i.e., contents of the memory can be accessed using partial information about the bound features of a stored item. In this study, we used a cross-feature cuing technique to examine how the human visual system encodes, binds, and retains information about multiple stimulus features within a set of moving objects. We sought to characterize the roles of three different features (position, color, and direction of motion, the latter two of which are processed preferentially within the ventral and dorsal visual streams, respectively) in the construction and maintenance of object representations. We investigated the extent to which these features are bound together across the following processing stages: during stimulus encoding, sensory (iconic) memory, and visual short-term memory. Whereas all features examined here can serve as cues for addressing content, their effectiveness shows asymmetries and varies according to cue-report pairings and the stage of information processing and storage. Position-based indexing theories predict that position should be more effective as a cue compared to other features. While we found a privileged role for position as a cue at the stimulus-encoding stage, position was not the privileged cue at the sensory and visual short-term memory stages. Instead, the pattern that emerged from our findings is one that mirrors the parallel processing streams in the visual system. This stream-specific binding and cuing effectiveness manifests itself in all three stages of information processing examined here. Finally, we find that the Leaky Flask model proposed in our previous study is applicable to all three features.

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

Science.gov (United States)

Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

2018-02-01

In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

Tracking the MSL-SAM methane detection source location Through Mars Regional Atmospheric Modeling System (MRAMS)

Science.gov (United States)

Pla-García, Jorge

2016-04-01

1. Introduction: The putative in situ detection of methane by Sample Analysis at Mars (SAM) instrument suite on Curiosi-ty at Gale crater has garnered significant attention because of the potential implications for the presence of geological methane sources or indigenous Martian organisms [1, 2]. SAM reported detection of back-ground levels of atmospheric methane of mean value 0.69±0.25 parts per billion by volume (ppbv) at the 95% confidence interval (CI). Additionally, in four sequential measurements spanning a 60-sol period, SAM observed elevated levels of methane of 7.2±2.1 ppbv (95% CI), implying that Mars is episodically producing methane from an additional unknown source. There are many major unresolved questions regard-ing this detection: 1) What are the potential sources of the methane release? 2) What causes the rapid decrease in concentration? and 3) Where is the re-lease location? 4) How spatially extensive is the re-lease? 5) For how long is CH4 released? Regarding the first question, the source of methane, is so far not identified. It could be related with geo-logical process like methane release from clathrates [3], serpentinisation [4] and volcanism [5]; or due to biological activity from methanogenesis [6]. To answer the second question, the rapid decrease in concentration, it is important to note that the photo-chemical lifetime of methane is of order 100 years, much longer than the atmospheric mixing time scale, and thus the gas should tend to be well mixed except near a source or shortly after an episodic release. The observed spike of 7 ppb from the background of System (MRAMS). The model was focused on rover locations using nested grids with a spacing of 330 meters on the in-nermost grid that is centered over the landing [8, 9]. MRAMS is ideally suited for this investigation; the model is explicitly designed to simulate Mars' at-mospheric circulations at the mesoscale and smaller with realistic, high-resolution surface properties [10, 11

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

Science.gov (United States)

Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

2017-09-01

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Dual representation of item positions in verbal short-term memory: Evidence for two access modes.

Science.gov (United States)

Lange, Elke B; Verhaeghen, Paul; Cerella, John

Memory sets of N = 1~5 digits were exposed sequentially from left-to-right across the screen, followed by N recognition probes. Probes had to be compared to memory list items on identity only (Sternberg task) or conditional on list position. Positions were probed randomly or in left-to-right order. Search functions related probe response times to set size. Random probing led to ramped, "Sternbergian" functions whose intercepts were elevated by the location requirement. Sequential probing led to flat search functions-fast responses unaffected by set size. These results suggested that items in STM could be accessed either by a slow search-on-identity followed by recovery of an associated location tag, or in a single step by following item-to-item links in study order. It is argued that this dual coding of location information occurs spontaneously at study, and that either code can be utilised at retrieval depending on test demands.

Hybrid Josephson-CMOS memory: a solution for the Josephson memory problem

International Nuclear Information System (INIS)

Duzer, Theodore van; Feng Yijun; Meng Xiaofan; Whiteley, Stephen R; Yoshikawa, Nobuyuki

2002-01-01

The history of the development of superconductive memory for Josephson digital systems is presented along with the several current proposals. The main focus is on a proposed combination of the highly developed CMOS memory technology with Josephson peripheral circuits to achieve memories of significant size with subnanosecond access time. Background material is presented on the cryogenic operation of CMOS. Simulations and experiments on components of memory with emphasis on the important input interface amplifier are presented

Remote Memory Access Protocol Target Node Intellectual Property

Science.gov (United States)

Haddad, Omar

2013-01-01

The MagnetoSpheric Multiscale (MMS) mission had a requirement to use the Remote Memory Access Protocol (RMAP) over its SpaceWire network. At the time, no known intellectual property (IP) cores were available for purchase. Additionally, MMS preferred to implement the RMAP functionality with control over the low-level details of the design. For example, not all the RMAP standard functionality was needed, and it was desired to implement only the portions of the RMAP protocol that were needed. RMAP functionality had been previously implemented in commercial off-the-shelf (COTS) products, but the IP core was not available for purchase. The RMAP Target IP core is a VHDL (VHSIC Hardware Description Language description of a digital logic design suitable for implementation in an FPGA (field-programmable gate array) or ASIC (application-specific integrated circuit) that parses SpaceWire packets that conform to the RMAP standard. The RMAP packet protocol allows a network host to access and control a target device using address mapping. This capability allows SpaceWire devices to be managed in a standardized way that simplifies the hardware design of the device, as well as the development of the software that controls the device. The RMAP Target IP core has some features that are unique and not specified in the RMAP standard. One such feature is the ability to automatically abort transactions if the back-end logic does not respond to read/write requests within a predefined time. When a request times out, the RMAP Target IP core automatically retracts the request and returns a command response with an appropriate status in the response packet s header. Another such feature is the ability to control the SpaceWire node or router using RMAP transactions in the extended address range. This allows the SpaceWire network host to manage the SpaceWire network elements using RMAP packets, which reduces the number of protocols that the network host needs to support.

Working memory retrieval differences between medial temporal lobe epilepsy patients and controls: a three memory layer approach.

Science.gov (United States)

López-Frutos, José María; Poch, Claudia; García-Morales, Irene; Ruiz-Vargas, José María; Campo, Pablo

2014-02-01

Multi-store models of working memory (WM) have given way to more dynamic approaches that conceive WM as an activated subset of long-term memory (LTM). The resulting framework considers that memory representations are governed by a hierarchy of accessibility. The activated part of LTM holds representations in a heightened state of activation, some of which can reach a state of immediate accessibility according to task demands. Recent neuroimaging studies have studied the neural basis of retrieval information with different states of accessibility. It was found that the medial temporal lobe (MTL) was involved in retrieving information within immediate access store and outside this privileged zone. In the current study we further explored the contribution of MTL to WM retrieval by analyzing the consequences of MTL damage to this process considering the state of accessibility of memory representations. The performance of a group of epilepsy patients with left hippocampal sclerosis in a 12-item recognition task was compared with that of a healthy control group. We adopted an embedded model of WM that distinguishes three components: the activated LTM, the region of direct access, and a single-item focus of attention. Groups did not differ when retrieving information from single-item focus, but patients were less accurate retrieving information outside focal attention, either items from LTM or items expected to be in the WM range. Analyses focused on items held in the direct access buffer showed that consequences of MTL damage were modulated by the level of accessibility of memory representations, producing a reduced capacity. Copyright © 2013 The Authors. Published by Elsevier Inc. All rights reserved.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

Science.gov (United States)

Di Pendina, G.; Zianbetov, E.; Beigne, E.

2015-05-01

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

Energy Technology Data Exchange (ETDEWEB)

Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Beigne, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble (France)

2015-05-07

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

International Nuclear Information System (INIS)

Di Pendina, G.; Zianbetov, E.; Beigne, E.

2015-01-01

Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes

Large-scale particle simulations in a virtual-memory computer

International Nuclear Information System (INIS)

Gray, P.C.; Wagner, J.S.; Tajima, T.; Million, R.

1982-08-01

Virtual memory computers are capable of executing large-scale particle simulations even when the memory requirements exceed the computer core size. The required address space is automatically mapped onto slow disc memory by the operating system. When the simulation size is very large, frequent random accesses to slow memory occur during the charge accumulation and particle pushing processes. Accesses to slow memory significantly reduce the execution rate of the simulation. We demonstrate in this paper that with the proper choice of sorting algorithm, a nominal amount of sorting to keep physically adjacent particles near particles with neighboring array indices can reduce random access to slow memory, increase the efficiency of the I/O system, and hence, reduce the required computing time

Hand Shape Affects Access to Memories

NARCIS (Netherlands)

K. Dijkstra (Katinka); M.P. Kaschak; R.A. Zwaan (Rolf)

2008-01-01

textabstractThe present study examined the ways that body posture facilitated retrieval of autobiographical memories in more detail by focusing on two aspects of congruence in position of a specific body part: hand shape and hand orientation. Hand shape is important in the tactile perception and

Study of magnetization switching in coupled magnetic nanostructured systems

Science.gov (United States)

Radu, Cosmin

A study of magnetization dynamics experiments in nanostructured materials using the rf susceptibility tunnel diode oscillator (TDO) method is presented along with a extensive theoretical analysis. An original, computer controlled experimental setup that measures the change in susceptibility with the variation in external magnetic field and sample temperature was constructed. The TDO-based experiment design and construction is explained in detail, showing all the elements of originality. This experimental technique has proven reliable for characterizing samples with uncoupled magnetic structure and various magnetic anisotropies like: CrO2, FeCo/IrMn and Co/SiO2 thin films. The TDO was subsequently used to explore the magnetization switching in coupled magnetic systems, like synthetic antiferromagnet (SAF) structures. Magnetoresistive random access memory (MRAM) is an important example of devices where the use of SAF structure is essential. To support the understanding of the SAF magnetic behavior, its configuration and application are reviewed and more details are provided in an appendix. Current problems in increasing the scalability and decreasing the error rate of MRAM devices are closely connected to the switching properties of the SAF structures. Several theoretical studies that were devoted to the understanding of the concepts of SAF critical curve are reviewed. As one can notice, there was no experimental determination of SAF critical curve, due to the difficulties in characterizing a magnetic coupled structure. Depending of the coupling strength between the two ferromagnetic layers, on the SAF critical curve one distinguishes several new features, inexistent in the case of uncoupled systems. Knowing the configuration of the SAF critical curve is of great importance in order to control its switching characteristics. For the first time a method of experimentally recording the critical curve for SAF is proposed in this work. In order to overcome technological

Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

International Nuclear Information System (INIS)

Phillips, G.W.; August, R.A.; Campbell, A.B.; Nelson, M.E.; Guardala, N.A.; Price, J.L.; Moscovitch, M.

2002-01-01

The feasibility was investigated of a solid-state neutron detector/dosemeter based on single-event upset (SEU) effects in dynamic random-access memories (DRAMs), commonly used in computer memories. Such a device, which uses a neutron converter material to produce a charged particle capable of causing an upset, would be light-weight, low-power, and could be read simply by polling the memory for bit flips. It would have significant advantages over standard solid-state neutron dosemeters which require off-line processing for track etching and analysis. Previous efforts at developing an SEU neutron detector/dosemeter have suffered from poor response, which can be greatly enhanced by selecting a modern high-density DRAM chip for SEU sensitivity and by using a thin 10 B film as a converter. Past attempts to use 10 B were not successful because the average alpha particle energy was insufficient to penetrate to the sensitive region of the memory. This can be overcome by removing the surface passivation layer before depositing the 10 B film or by implanting 10B directly into the chip. Previous experimental data show a 10 3 increase in neutron sensitivity by chips containing borosilicate glass, which could be used in an SEU detector. The results are presented of simulations showing that the absolute efficiency of an SEU neutron dosemeter can be increased by at least a factor of 1000 over earlier designs. (author)

A Pilot Memory Café for People with Learning Disabilities and Memory Difficulties

Science.gov (United States)

Kiddle, Hannah; Drew, Neil; Crabbe, Paul; Wigmore, Jonathan

2016-01-01

Memory cafés have been found to normalise experiences of dementia and provide access to an accepting social network. People with learning disabilities are at increased risk of developing dementia, but the possible benefits of attending a memory café are not known. This study evaluates a 12-week pilot memory café for people with learning…

System and method for programmable bank selection for banked memory subsystems

Energy Technology Data Exchange (ETDEWEB)

Blumrich, Matthias A. (Ridgefield, CT); Chen, Dong (Croton on Hudson, NY); Gara, Alan G. (Mount Kisco, NY); Giampapa, Mark E. (Irvington, NY); Hoenicke, Dirk (Seebruck-Seeon, DE); Ohmacht, Martin (Yorktown Heights, NY); Salapura, Valentina (Chappaqua, NY); Sugavanam, Krishnan (Mahopac, NY)

2010-09-07

A programmable memory system and method for enabling one or more processor devices access to shared memory in a computing environment, the shared memory including one or more memory storage structures having addressable locations for storing data. The system comprises: one or more first logic devices associated with a respective one or more processor devices, each first logic device for receiving physical memory address signals and programmable for generating a respective memory storage structure select signal upon receipt of pre-determined address bit values at selected physical memory address bit locations; and, a second logic device responsive to each of the respective select signal for generating an address signal used for selecting a memory storage structure for processor access. The system thus enables each processor device of a computing environment memory storage access distributed across the one or more memory storage structures.

Attention, working memory, and phenomenal experience of WM content: memory levels determined by different types of top-down modulation

OpenAIRE

Jacob, Jane; Jacobs, Christianne; Silvanto, Juha

2015-01-01

What is the role of top-down attentional modulation in consciously accessing working memory (WM) content? In influential WM models, information can exist in different states, determined by allocation of attention; placing the original memory representation in the center of focused attention gives rise to conscious access. Here we discuss various lines of evidence indicating that such attentional modulation is not sufficient for memory content to be phenomenally experienced. We propose that, i...

Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

KAUST Repository

Wu, Xing

2011-08-29

Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

Attention, working memory, and phenomenal experience of WM content: memory levels determined by different types of top-down modulation.

Science.gov (United States)

Jacob, Jane; Jacobs, Christianne; Silvanto, Juha

2015-01-01

What is the role of top-down attentional modulation in consciously accessing working memory (WM) content? In influential WM models, information can exist in different states, determined by allocation of attention; placing the original memory representation in the center of focused attention gives rise to conscious access. Here we discuss various lines of evidence indicating that such attentional modulation is not sufficient for memory content to be phenomenally experienced. We propose that, in addition to attentional modulation of the memory representation, another type of top-down modulation is required: suppression of all incoming visual information, via inhibition of early visual cortex. In this view, there are three distinct memory levels, as a function of the top-down control associated with them: (1) Nonattended, nonconscious associated with no attentional modulation; (2) attended, phenomenally nonconscious memory, associated with attentional enhancement of the actual memory trace; (3) attended, phenomenally conscious memory content, associated with enhancement of the memory trace and top-down suppression of all incoming visual input.

Transparent Memory For Harsh Electronics

KAUST Repository

Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau

2017-01-01

As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance

NUMA obliviousness through memory mapping

NARCIS (Netherlands)

M.M. Gawade (Mrunal); M.L. Kersten (Martin)

2015-01-01

htmlabstractWith the rise of multi-socket multi-core CPUs a lot of effort is being put into how to best exploit their abundant CPU power. In a shared memory setting the multi-socket CPUs are equipped with their own memory module, and access memory modules across sockets in a non-uniform

How intention and monitoring your thoughts influence characteristics of autobiographical memories.

Science.gov (United States)

Barzykowski, Krystian; Staugaard, Søren Risløv

2018-05-01

Involuntary autobiographical memories come to mind effortlessly and unintended, but the mechanisms of their retrieval are not fully understood. We hypothesize that involuntary retrieval depends on memories that are highly accessible (e.g., intense, unusual, recent, rehearsed), while the elaborate search that characterizes voluntary retrieval also produces memories that are mundane, repeated or distant - memories with low accessibility. Previous research provides some evidence for this 'threshold hypothesis'. However, in almost every prior study, participants have been instructed to report only memories while ignoring other thoughts. It is possible that such an instruction can modify the phenomenological characteristics of involuntary memories. This study aimed to investigate the effects of retrieval intentionality (i.e., wanting to retrieve a memory) and selective monitoring (i.e., instructions to report only memories) on the phenomenology of autobiographical memories. Participants were instructed to (1) intentionally retrieve autobiographical memories, (2) intentionally retrieve any type of thought (3) wait for an autobiographical memory to spontaneously appear, or (4) wait for any type of thought to spontaneously appear. They rated the mental content on a number of phenomenological characteristics both during retrieval and retrospectively following retrieval. The results support the prediction that highly accessible memories mostly enter awareness unintended and without selective monitoring, while memories with low accessibility rely on intention and selective monitoring. We discuss the implications of these effects. © 2017 The British Psychological Society.

Retrieval Practice Enhances the Accessibility but not the Quality of Memory

OpenAIRE

Sutterer, David W.; Awh, Edward

2016-01-01

Numerous studies have demonstrated that retrieval from long term memory (LTM) can enhance subsequent memory performance, a phenomenon labeled the retrieval practice effect. However, the almost exclusive reliance on categorical stimuli in this literature leaves open a basic question about the nature of this improvement in memory performance. It has not yet been determined whether retrieval practice improves the probability of successful memory retrieval or the quality of the retrieved represen...

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

Science.gov (United States)

Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

2014-06-11

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

Neural Correlates of Conceptual Implicit Memory and Their Contamination of Putative Neural Correlates of Explicit Memory

Science.gov (United States)

Voss, Joel L.; Paller, Ken A.

2007-01-01

During episodic recognition tests, meaningful stimuli such as words can engender both conscious retrieval (explicit memory) and facilitated access to meaning that is distinct from the awareness of remembering (conceptual implicit memory). Neuroimaging investigations of one type of memory are frequently subject to the confounding influence of the…

Stable switching of resistive random access memory on the nanotip array electrodes

KAUST Repository

Tsai, Kun-Tong

2016-09-13

The formation/rupture of conducting filaments (CFs) in resistive random access memory (ReRAM) materials tune the electrical conductivities non-volatilely and are largely affected by its material composition [1], internal configurations [2] and external environments [3,4]. Therefore, controlling repetitive formation/rupture of CF as well as the spatial uniformity of formed CF are fundamentally important for improving the resistive switching (RS) performance. In this context, we have shown that by adding a field initiator, typically a textured electrode, both performance and switching uniformity of ReRAMs can be improved dramatically [5]. In addition, despite its promising characteristics, the scalable fabrication and structural homogeneity of such nanostructured electrodes are still lacking or unattainable, making miniaturization of ReRAM devices an exceeding challenge. Here, we employ nanostructured electrode (nanotip arrays, extremely uniform) formed spontaneously via a self-organized process to improve the ZnO ReRAM switching characteristics.

Metal oxide resistive random access memory based synaptic devices for brain-inspired computing

Science.gov (United States)

Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan

2016-04-01

The traditional Boolean computing paradigm based on the von Neumann architecture is facing great challenges for future information technology applications such as big data, the Internet of Things (IoT), and wearable devices, due to the limited processing capability issues such as binary data storage and computing, non-parallel data processing, and the buses requirement between memory units and logic units. The brain-inspired neuromorphic computing paradigm is believed to be one of the promising solutions for realizing more complex functions with a lower cost. To perform such brain-inspired computing with a low cost and low power consumption, novel devices for use as electronic synapses are needed. Metal oxide resistive random access memory (ReRAM) devices have emerged as the leading candidate for electronic synapses. This paper comprehensively addresses the recent work on the design and optimization of metal oxide ReRAM-based synaptic devices. A performance enhancement methodology and optimized operation scheme to achieve analog resistive switching and low-energy training behavior are provided. A three-dimensional vertical synapse network architecture is proposed for high-density integration and low-cost fabrication. The impacts of the ReRAM synaptic device features on the performances of neuromorphic systems are also discussed on the basis of a constructed neuromorphic visual system with a pattern recognition function. Possible solutions to achieve the high recognition accuracy and efficiency of neuromorphic systems are presented.

Massive parallel optical pattern recognition and retrieval via a two-stage high-capacity multichannel holographic random access memory system

International Nuclear Information System (INIS)

Cai, Luzhong; Liu, Hua-Kuang

2000-01-01

The multistage holographic optical random access memory (HORAM) system reported recently by Liu et al. provides a new degree of freedom for improving storage capacity. We further present a theoretical and practical analysis of the HORAM system with experimental results. Our discussions include the system design and geometrical requirements, its applications for multichannel pattern recognition and associative memory, the 2-D and 3-D information storage capacity, and multichannel image storage and retrieval via VanderLugt correlator (VLC) filters and joint transform holograms. A series of experiments are performed to demonstrate the feasibility of the multichannel pattern recognition and image retrieval with both the VLC and joint transform correlator (JTC) architectures. The experimental results with as many as 2025 channels show good agreement with the theoretical analysis. (c) 2000 Society of Photo-Optical Instrumentation Engineers

Software Prefetching for Indirect Memory Accesses

OpenAIRE

Ainsworth, Sam; Jones, Timothy

2017-01-01

Many modern data processing and HPC workloads are heavily memory-latency bound. A tempting proposition to solve this is software prefetching, where special non-blocking loads are used to bring data into the cache hierarchy just before being required. However, these are difficult to insert to effectively improve performance, and techniques for automatic insertion are currently limited. This paper develops a novel compiler pass to automatically generate software prefetches for indirect mem...

Retrieval practice enhances the accessibility but not the quality of memory.

Science.gov (United States)

Sutterer, David W; Awh, Edward

2016-06-01

Numerous studies have demonstrated that retrieval from long-term memory (LTM) can enhance subsequent memory performance, a phenomenon labeled the retrieval practice effect. However, the almost exclusive reliance on categorical stimuli in this literature leaves open a basic question about the nature of this improvement in memory performance. It has not yet been determined whether retrieval practice improves the probability of successful memory retrieval or the quality of the retrieved representation. To answer this question, we conducted three experiments using a mixture modeling approach (Zhang & Luck, 2008) that provides a measure of both the probability of recall and the quality of the recalled memories. Subjects attempted to memorize the color of 400 unique shapes. After every 10 images were presented, subjects either recalled the last 10 colors (the retrieval practice condition) by clicking on a color wheel with each shape as a retrieval cue or they participated in a control condition that involved no further presentations (Experiment 1) or restudy of the 10 shape/color associations (Experiments 2 and 3). Performance in a subsequent delayed recall test revealed a robust retrieval practice effect. Subjects recalled a significantly higher proportion of items that they had previously retrieved relative to items that were untested or that they had restudied. Interestingly, retrieval practice did not elicit any improvement in the precision of the retrieved memories. The same empirical pattern also was observed following delays of greater than 24 hours. Thus, retrieval practice increases the probability of successful memory retrieval but does not improve memory quality.

Decoupled Access-Execute on ARM big.LITTLE

OpenAIRE

Weber, Anton

2016-01-01

Decoupled Access-Execute (DAE) presents a novel approach to improve power efficiency with a combination of compile-time transformations and Dynamic Voltage Frequency Scaling (DVFS). DAE splits regions of the program into two distinct phases: a memory-bound access phase and a compute-bound execute phase. DVFS is used to run the phases at different frequencies, thus conserving energy while caching data from main memory and performing computations at maximum performance. This project analyses th...

Disk access controller for Multi 8 computer

International Nuclear Information System (INIS)

Segalard, Jean

1970-01-01

After having presented the initial characteristics and weaknesses of the software provided for the control of a memory disk coupled with a Multi 8 computer, the author reports the development and improvement of this controller software. He presents the different constitutive parts of the computer and the operation of the disk coupling and of the direct access to memory. He reports the development of the disk access controller: software organisation, loader, subprograms and statements

Application of phase-change materials in memory taxonomy.

Science.gov (United States)

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

Study of the origin of magnetic couples induced by spin-orbit coupling in Co/Pt-based asymmetrical structures

International Nuclear Information System (INIS)

Drouard, Marc

2014-01-01

In order to reduce power consumption in next generations' electronic devices, one potential solution is to implement non-volatility in memory cells. In this goal, the magnetization switching of a ferromagnetic material has been used in a memory concept: the MRAM. The latest development of this technology, called SOT-RAM, is based on new phenomena called SOTs (Spin-Orbit Torques) in order to control magnetization direction. Contrary to precedent generations (STT-MRAM), it should achieve a higher operating speed and an endurance adapted for cache and main memories applications. SOTs is a generic term referring to all the effects, linked to the spin-orbit interaction, and that enable magnetization reversal. They are yet not perfectly understood. The main objective of this Ph.D. was then to study these SOTs through a quasi-static experimental measurement setup based on anomalous and planar Hall effects. Its implementation and the associated analysis method, as well as the required theoretical considerations for data interpretation are detailed in this manuscript. It has been highlighted that magnetization switching in perpendicularly magnetization cobalt-platinum Systems cannot be explained by the simple models considered thus far in the literature. As a matter of fact it has been evidenced that at least two effects have to be considered in order to explain observed phenomena. In addition, they present different susceptibility both to a modification of the crystal structure and to a temperature change. (author) [fr

Context controls access to working and reference memory in the pigeon (Columba livia).

Science.gov (United States)

Roberts, William A; Macpherson, Krista; Strang, Caroline

2016-01-01

The interaction between working and reference memory systems was examined under conditions in which salient contextual cues were presented during memory retrieval. Ambient colored lights (red or green) bathed the operant chamber during the presentation of comparison stimuli in delayed matching-to-sample training (working memory) and during the presentation of the comparison stimuli as S+ and S- cues in discrimination training (reference memory). Strong competition between memory systems appeared when the same contextual cue appeared during working and reference memory training. When different contextual cues were used, however, working memory was completely protected from reference memory interference. © 2016 Society for the Experimental Analysis of Behavior.

Fiscal 2000 pioneering research on the spintronic device basic technology; 2000 nendo spintronic soshi kiban gijutsu sendo kenkyu hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Researchers specializing in technologies of magnetism or semiconductor were drafted from the industrial, official, and academic circles, who conducted hearings, patent investigations, overseas surveys, and the like, concerning spintronics. Collected in this report are the outline of the research and development of spintronic device technology, its current state and tasks and its importance from social and economic viewpoints, and the strategy that Japan should follow in the research and development of the technology. Important spintronic device technologies now attracting attention are mentioned below. The nonvolatile magnetic memory device MRAM (magnetic random access memory) is supposed to be the device which will enjoy practical application first among like devices. It is expected that the spin conduction device will lead to novel functions when the possibilities of the spin-dependent electric conduction phenomenon are further pursued. It is hoped that the spin optical device will be used as a light isolator, light spin logic device, field induced variable wavelength laser device, spin laser device, high-speed light switch, and so forth. It is necessary to watch the development of a spin-aided quantum computer which is still at the stage of basic study. (NEDO)

False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

Science.gov (United States)

Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

2013-04-01

Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

Memory hierarchy using row-based compression

Science.gov (United States)

Loh, Gabriel H.; O'Connor, James M.

2016-10-25

A system includes a first memory and a device coupleable to the first memory. The device includes a second memory to cache data from the first memory. The second memory includes a plurality of rows, each row including a corresponding set of compressed data blocks of non-uniform sizes and a corresponding set of tag blocks. Each tag block represents a corresponding compressed data block of the row. The device further includes decompression logic to decompress data blocks accessed from the second memory. The device further includes compression logic to compress data blocks to be stored in the second memory.

Large scale particle simulations in a virtual memory computer

International Nuclear Information System (INIS)

Gray, P.C.; Million, R.; Wagner, J.S.; Tajima, T.

1983-01-01

Virtual memory computers are capable of executing large-scale particle simulations even when the memory requirements exceeds the computer core size. The required address space is automatically mapped onto slow disc memory the the operating system. When the simulation size is very large, frequent random accesses to slow memory occur during the charge accumulation and particle pushing processes. Assesses to slow memory significantly reduce the excecution rate of the simulation. We demonstrate in this paper that with the proper choice of sorting algorithm, a nominal amount of sorting to keep physically adjacent particles near particles with neighboring array indices can reduce random access to slow memory, increase the efficiency of the I/O system, and hence, reduce the required computing time. (orig.)

A Shared Scratchpad Memory with Synchronization Support

DEFF Research Database (Denmark)

Hansen, Henrik Enggaard; Maroun, Emad Jacob; Kristensen, Andreas Toftegaard

2017-01-01

Multicore processors usually communicate via shared memory, which is backed up by a shared level 2 cache and a cache coherence protocol. However, this solution is not a good fit for real-time systems, where we need to provide tight guarantees on execution and memory access times. In this paper, we...... propose a shared scratchpad memory as a time-predictable communication and synchronization structure, instead of the level 2 cache. The shared on-chip memory is accessed via a time division multiplexing arbiter, isolating the execution time of load and store instructions between processing cores....... Furthermore, the arbiter supports an extended time slot where an atomic load and store instruction can be executed to implement synchronization primitives. In the evaluation we show that a shared scratchpad memory is an efficient communication structure for a small number of processors; in our setup, 9 cores...

Solution-processed flexible NiO resistive random access memory device

Science.gov (United States)

Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

2018-04-01

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Measuring autobiographical fluency in the self-memory system.

Science.gov (United States)

Rathbone, Clare J; Moulin, Chris J A

2014-01-01

Autobiographical memory is widely considered to be fundamentally related to concepts of self and identity. However, few studies have sought to test models of self and memory directly using experimental designs. Using a novel autobiographical fluency paradigm, the present study investigated memory accessibility for different levels of self-related knowledge. Forty participants generated 20 "I am" statements about themselves, from which the 1st, 5th, 10th, 15th, and 20th were used as cues in a two-minute autobiographical fluency task. The most salient aspects of the self, measured by both serial position and ratings of personal significance, were associated with more accessible sets of autobiographical memories. This finding supports theories that view the self as a powerful organizational structure in memory. Results are discussed with reference to models of self and memory.

Oscillatory mechanisms of process binding in memory.

Science.gov (United States)

Klimesch, Wolfgang; Freunberger, Roman; Sauseng, Paul

2010-06-01

A central topic in cognitive neuroscience is the question, which processes underlie large scale communication within and between different neural networks. The basic assumption is that oscillatory phase synchronization plays an important role for process binding--the transient linking of different cognitive processes--which may be considered a special type of large scale communication. We investigate this question for memory processes on the basis of different types of oscillatory synchronization mechanisms. The reviewed findings suggest that theta and alpha phase coupling (and phase reorganization) reflect control processes in two large memory systems, a working memory and a complex knowledge system that comprises semantic long-term memory. It is suggested that alpha phase synchronization may be interpreted in terms of processes that coordinate top-down control (a process guided by expectancy to focus on relevant search areas) and access to memory traces (a process leading to the activation of a memory trace). An analogous interpretation is suggested for theta oscillations and the controlled access to episodic memories. Copyright (c) 2009 Elsevier Ltd. All rights reserved.

Forgetting: availability, accessibility, and intentional control problem

Directory of Open Access Journals (Sweden)

Veronika V. Nourkova

2016-09-01

Full Text Available The paper focuses on the phenomenon of forgetting as a primal and generally productive memory process. The cases that require a temporary and permanent forgetting of the material stored in the long-term memory are contrasted. The main methodological obstacle in forgetting research is identified as arising from the logical prohibition to argument from the negative, i.e. “the evidence of absence is not the evidence of absence”. Two mechanisms of forgetting are discussed in the paper: transformation of the memory trace and modulation of trace accessibility. The former mechanism of forgetting consists of memory trace destruction (memory trace decay, retroactive and proactive interference, and «catastrophic» interference or its transformation that leads to forming a new memory representation. We speculate that the most promising way to legitimize the trace destruction mechanism is narrowing the further research to episodic memory subsystem. The latter mechanism of forgetting consists of both passive failure in access to appropriate memory content (the tip of the tongue phenomenon, the category size effect, the fan effect and the process of active retrieval inhibition. This phenomenon represents temporary inhibition of competing semantically similar responses in semantic memory, and motivational inhibition of self-deprecating memories in autobiographical memory. Then we put into consideration a variety of experimental paradigms in intentional forgetting research. Contrary to the common claim that forgetting is а universal and homogeneous phenomenon, we propose that forgetting strategies might vary in different memory subsystems, and also depend on activity characteristics during encoding, storage and retrieval.

Consciousness: physiological dependence on rapid memory access.

Science.gov (United States)

Hudson, Arthur J

2009-01-01

Consciousness develops from birth during the early months as the senses and other nervous system functions mature sufficiently to receive, process and store information. Among these is the ascending reticular activating (arousal) system in the brain stem that is responsible for wakefulness and was proposed by Penfield and Jasper more than 50 years ago as the "controlling mechanism for states of consciousness". This concept has remained the most advanced physiological interpretation of consciousness although recent developments offer greater insights into its nature. The ascending arousal system is the source of activation of the thalamocortical and cortical mechanisms for sensory input and facilitates the rapid matching of sensory input and the binding of memory during cognitive processing. Nonetheless, it is proposed that memory is the critical element through which our connection with the world exists without which, despite a fully functional arousal system, consciousness as we know it could not exist. Evidence is presented in support of this concept in addition to the physiological difficulties that must be resolved if consciousness is to be understood.

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

Science.gov (United States)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Doped SbTe phase change material in memory cells

NARCIS (Netherlands)

in ‘t Zandt, M.A.A.; Jedema, F.J.; Gravesteijn, Dirk J; Gravesteijn, D.J.; Attenborough, K.; Wolters, Robertus A.M.

2009-01-01

Phase Change Random Access Memory (PCRAM) is investigated as replacement for Flash. The memory concept is based on switching a chalcogenide from the crystalline (low ohmic) to the amorphous (high ohmic) state and vice versa. Basically two memory cell concepts exist: the Ovonic Unified Memory (OUM)

Aristotle: A performance Impact Indicator for the OpenCL Kernels Using Local Memory

Directory of Open Access Journals (Sweden)

Jianbin Fang

2014-01-01

Full Text Available Due to the increasing complexity of multi/many-core architectures (with their mix of caches and scratch-pad memories and applications (with different memory access patterns, the performance of many workloads becomes increasingly variable. In this work, we address one of the main causes for this performance variability: the efficiency of the memory system. Specifically, based on an empirical evaluation driven by memory access patterns, we qualify and partially quantify the performance impact of using local memory in multi/many-core processors. To do so, we systematically describe memory access patterns (MAPs in an application-agnostic manner. Next, for each identified MAP, we use OpenCL (for portability reasons to generate two microbenchmarks: a “naive” version (without local memory and “an optimized” version (using local memory. We then evaluate both of them on typically used multi-core and many-core platforms, and we log their performance. What we eventually obtain is a local memory performance database, indexed by various MAPs and platforms. Further, we propose a set of composing rules for multiple MAPs. Thus, we can get an indicator of whether using local memory is beneficial in the presence of multiple memory access patterns. This indication can be used to either avoid the hassle of implementing optimizations with too little gain or, alternatively, give a rough prediction of the performance gain.

Band structure of the quaternary Heusler alloys ScMnFeSn and ScFeCoAl

Science.gov (United States)

Shanthi, N.; Teja, Y. N.; Shaji, Shephine M.; Hosamani, Shashikala; Divya, H. S.

2018-04-01

In our quest for materials with specific applications, a theoretical study plays an important role in predicting the properties of compounds. Heusler alloys or compounds are the most studied in this context. More recently, a lot of quaternary Heusler compounds are investigated for potential applications in fields like Spintronics. We report here our preliminary study of the alloys ScMnFeSn and ScFeCoAl, using the ab-initio linear muffin-tin orbital method within the atomic sphere approximation (LMTO-ASA). The alloy ScMnFeSn shows perfect half-metallicity, namely, one of the spins shows a metallic behaviour and the other spin shows semi-conducting behaviour. Such materials find application in devices such as the spin-transfer torque random access memory (STT-MRAM). In addition, the alloy ScMnFeSn is found to have an integral magnetic moment of 4 µB, as predicted by the Slater-Pauling rule. The alloy ScFeCoAl does not show half-metallicity.

Individual differences in susceptibility to false memories: The effect of memory specificity.

Science.gov (United States)

Dewhurst, Stephen A; Anderson, Rachel J; Berry, Donna M; Garner, Sarah R

2017-06-25

Previous research has highlighted the wide individual variability in susceptibility to the false memories produced by the Deese/Roediger-McDermott (DRM) procedure [Deese, J. (1959). On the prediction of occurrence of particular verbal intrusions in immediate recall. Journal of Experimental Psychology, 58, 17-22; Roediger, H. L., III, & McDermott, K. B. (1995). Creating false memories: Remembering words not presented in lists. Journal of Experimental Psychology: Learning, Memory, & Cognition, 21, 803-814]. The current study investigated whether susceptibility to false memories is influenced by individual differences in the specificity of autobiographical memory retrieval. Memory specificity was measured using the Sentence Completion for Events from the Past Test (SCEPT) [Raes, F., Hermans, D., Williams, J. M. G., & Eelen, P. (2007). A sentence completion procedure as an alternative to the Autobiographical Memory Test for assessing overgeneral memory in non-clinical populations. Memory, 15, 495-507]. Memory specificity did not correlate with correct recognition, but a specific retrieval style was positively correlated with levels of false recognition. It is proposed that the contextual details that frequently accompany false memories of nonstudied lures are more accessible in individuals with specific retrieval styles.

One-way shared memory

DEFF Research Database (Denmark)

Schoeberl, Martin

2018-01-01

Standard multicore processors use the shared main memory via the on-chip caches for communication between cores. However, this form of communication has two limitations: (1) it is hardly time-predictable and therefore not a good solution for real-time systems and (2) this single shared memory...... is a bottleneck in the system. This paper presents a communication architecture for time-predictable multicore systems where core-local memories are distributed on the chip. A network-on-chip constantly copies data from a sender core-local memory to a receiver core-local memory. As this copying is performed...... in one direction we call this architecture a one-way shared memory. With the use of time-division multiplexing for the memory accesses and the network-on-chip routers we achieve a time-predictable solution where the communication latency and bandwidth can be bounded. An example architecture for a 3...

A Unified Buffering Management with Set Divisible Cache for PCM Main Memory

Institute of Scientific and Technical Information of China (English)

Mei-Ying Bian; Su-Kyung Yoon; Jeong-Geun Kim; Sangjae Nam; Shin-Dug Kim

2016-01-01

This research proposes a phase-change memory (PCM) based main memory system with an effective combi-nation of a superblock-based adaptive buffering structure and its associated set divisible last-level cache (LLC). To achieve high performance similar to that of dynamic random-access memory (DRAM) based main memory, the superblock-based adaptive buffer (SABU) is comprised of dual DRAM buffers, i.e., an aggressive superblock-based pre-fetching buffer (SBPB) and an adaptive sub-block reusing buffer (SBRB), and a set divisible LLC based on a cache space optimization scheme. According to our experiment, the longer PCM access latency can typically be hidden using our proposed SABU, which can significantly reduce the number of writes over the PCM main memory by 26.44%. The SABU approach can reduce PCM access latency up to 0.43 times, compared with conventional DRAM main memory. Meanwhile, the average memory energy consumption can be reduced by 19.7%.

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

International Nuclear Information System (INIS)

Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

2014-01-01

A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

Science.gov (United States)

Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

2014-06-01

A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

How intention and monitoring your thoughts influence characteristics of autobiographical memories

DEFF Research Database (Denmark)

Barzykowski, Krystian; Staugaard, Søren Risløv

2018-01-01

Involuntary autobiographical memories come to mind effortlessly and unintended, but the mechanisms of their retrieval are not fully understood. We hypothesize that involuntary retrieval depends on memories that are highly accessible (e.g., intense, unusual, recent, rehearsed), while the elaborate...... search that characterizes voluntary retrieval also produces memories that are mundane, repeated or distant – memories with low accessibility. Previous research provides some evidence for this ‘threshold hypothesis’. However, in almost every prior study, participants have been instructed to report only...... memories while ignoring other thoughts. It is possible that such an instruction can modify the phenomenological characteristics of involuntary memories. This study aimed to investigate the effects of retrieval intentionality (i.e., wanting to retrieve a memory) and selective monitoring (i.e., instructions...

Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.

Science.gov (United States)

Zhao, Qiang; Wang, Hanlin; Ni, Zhenjie; Liu, Jie; Zhen, Yonggang; Zhang, Xiaotao; Jiang, Lang; Li, Rongjin; Dong, Huanli; Hu, Wenping

2017-09-01

Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm 2 V -1 s -1 (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm 2 V -1 s -1 (average) for N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN 2 ) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

Science.gov (United States)

Shima, Hisashi; Nakano, Takashi; Akinaga, Hiro

2010-05-01

The thermal stability of the resistance random access memory material in the reducing atmosphere at the elevated temperature was improved by the addition of Ti. The unipolar resistance switching before and after the postdeposition annealing (PDA) process at 400 °C was confirmed in Pt/CoO/Ti(5 nm)/Pt device, while the severe degradation of the initial resistance occurs in the Pt/CoO/Pt and Pt/CoO/Ti(50 nm)/Pt devices. By investigating the chemical bonding states of Co, O, and Ti using electron energy loss spectroscopy combined with transmission electron microscopy, it was revealed that excess Ti induces the formation of metallic Co, while the thermal stability was improved by trace Ti. Moreover, it was indicated that the filamentary conduction path can be thermally induced after PDA in the oxide layer by analyzing electrical properties of the degraded devices. The adjustment of the reducing elements is quite essential in order to participate in their profits.

Asymmetrical access to color and location in visual working memory.

Science.gov (United States)

Rajsic, Jason; Wilson, Daryl E

2014-10-01

Models of visual working memory (VWM) have benefitted greatly from the use of the delayed-matching paradigm. However, in this task, the ability to recall a probed feature is confounded with the ability to maintain the proper binding between the feature that is to be reported and the feature (typically location) that is used to cue a particular item for report. Given that location is typically used as a cue-feature, we used the delayed-estimation paradigm to compare memory for location to memory for color, rotating which feature was used as a cue and which was reported. Our results revealed several novel findings: 1) the likelihood of reporting a probed object's feature was superior when reporting location with a color cue than when reporting color with a location cue; 2) location report errors were composed entirely of swap errors, with little to no random location reports; and 3) both colour and location reports greatly benefitted from the presence of nonprobed items at test. This last finding suggests that it is uncertainty over the bindings between locations and colors at memory retrieval that drive swap errors, not at encoding. We interpret our findings as consistent with a representational architecture that nests remembered object features within remembered locations.

Physical principles and current status of emerging non-volatile solid state memories

Science.gov (United States)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

Active non-volatile memory post-processing

Energy Technology Data Exchange (ETDEWEB)

Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

2017-04-11

A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

Magnetic vortex racetrack memory

Science.gov (United States)

Geng, Liwei D.; Jin, Yongmei M.

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

Short-term memory to long-term memory transition in a nanoscale memristor.

Science.gov (United States)

Chang, Ting; Jo, Sung-Hyun; Lu, Wei

2011-09-27

"Memory" is an essential building block in learning and decision-making in biological systems. Unlike modern semiconductor memory devices, needless to say, human memory is by no means eternal. Yet, forgetfulness is not always a disadvantage since it releases memory storage for more important or more frequently accessed pieces of information and is thought to be necessary for individuals to adapt to new environments. Eventually, only memories that are of significance are transformed from short-term memory into long-term memory through repeated stimulation. In this study, we show experimentally that the retention loss in a nanoscale memristor device bears striking resemblance to memory loss in biological systems. By stimulating the memristor with repeated voltage pulses, we observe an effect analogous to memory transition in biological systems with much improved retention time accompanied by additional structural changes in the memristor. We verify that not only the shape or the total number of stimuli is influential, but also the time interval between stimulation pulses (i.e., the stimulation rate) plays a crucial role in determining the effectiveness of the transition. The memory enhancement and transition of the memristor device was explained from the microscopic picture of impurity redistribution and can be qualitatively described by the same equations governing biological memories. © 2011 American Chemical Society

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

Science.gov (United States)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Age, memory type, and the phenomenology of autobiographical memory: findings from an Italian sample.

Science.gov (United States)

Montebarocci, Ornella; Luchetti, Martina; Sutin, Angelina R

2014-01-01

The present research explored differences in phenomenology between two types of memories, a general self-defining memory and an earliest childhood memory. A sample of 76 Italian participants were selected and categorised into two age groups: 20-30 years and 31-40 years. The Memory Experiences Questionnaire (MEQ) was administered, taking note of latency and duration times of the narratives. Consistent with the literature, the self-defining memory differed significantly from the earliest childhood memory in terms of phenomenology, with the recency of the memory associated with more intense phenomenological experience. The self-defining memory took longer to retrieve and narrate than the earliest childhood memory. Meaningful differences also emerged between the two age groups: Participants in their 30s rated their self-defining memory as more vivid, coherent, and accessible than participants in their 20s. According to latency findings, these differences suggest an expanded period of identity consolidation for younger adults. Further applications of the MEQ should be carried out to replicate these results with other samples of young adults.

A 0.18-μm 3.3 V 16 k Bits 1R1T Phase Change Random Access Memory (PCRAM) Chip

International Nuclear Information System (INIS)

Sheng, Ding; Zhi-Tang, Song; Bo, Liu; Min, Zhu; Xiao-Gang, Chen; Yi-Feng, Chen; Ju, Shen; Cong, Fu; Song-Lin, Feng

2008-01-01

Using standard 0.18-μm CMOS process and the special platform for 8-inch phase change random access memory (PCRAM), the first Chinese 16k bits PCRAM chip has been successfully achieved. A 1R1T structure has been designed for low voltage drop and low cost compared to the 1R1D structure and the BJT-switch structure. Full integration of the 16k bits PCRAM chip, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. The critical integration technology of the phase change material (PCM) fabrication and the standard CMOS process has been solved. Test results about PCM in a large-scale array have been generated for the next research of PCRAM chip

Providing the Public with Online Access to Large Bibliographic Data Bases.

Science.gov (United States)

Firschein, Oscar; Summit, Roger K.

DIALOG, an interactive, computer-based information retrieval language, consists of a series of computer programs designed to make use of direct access memory devices in order to provide the user with a rapid means of identifying records within a specific memory bank. Using the system, a library user can be provided access to sixteen distinct and…

Memory consolidation

NARCIS (Netherlands)

Takashima, A.; Bakker, I.; Schmid, H.-J.

2016-01-01

In order to make use of novel experiences and knowledge to guide our future behavior, we must keep large amounts of information accessible for retrieval. The memory system that stores this information needs to be flexible in order to rapidly incorporate incoming information, but also requires that

Multichannel analyzer using the direct-memory-access channel in a personal computer; Mnogokanal`nyj analizator v personal`nom komp`yutere, ispol`zuyushchij kanal pryamogo dostupa k pamyati

Energy Technology Data Exchange (ETDEWEB)

Georgiev, G; Vankov, I; Dimitrov, L [Incn. Yadernykh Issledovanij i Yadernoj Ehnergetiki Bolgarskoj Akademii Nuk, Sofiya (Bulgaria); Peev, I [Firma TOIVEL, Sofiya (Bulgaria)

1996-12-31

Paper describes a multichannel analyzer of the spectrometry data developed on the basis of a personal computer memory and a controlled channel of direct access. Analyzer software covering a driver and program of spectrum display control is studied. 2 figs.

Single event simulation for memories using accelerated ions

International Nuclear Information System (INIS)

Sakagawa, Y.; Shiono, N.; Mizusawa, T.; Sekiguchi, M.; Sato, K.; Sugai, I.; Hirao, Y.; Nishimura, J.; Hattori, T.

1987-01-01

To evaluate the error immunity of the LSI memories from cosmic rays in space, an irradiation test using accelerated heavy ions is performed. The sensitive regions for 64 K DRAM (Dynamic Random Access Memory) and 4 K SRAM (Static Random Access Memory) are determined from the irradiation test results and the design parameters of the devices. The observed errors can be classified into two types. One is the direct ionization type and the other is the recoil produced error type. Sensitive region is determined for the devices. Error rate estimation methods for both types are proposed and applied to those memories used in space. The error rate of direct ionization exceeds the recoil type by 2 or 3 orders. And the direct ionization is susceptible to shield thickness. (author)

Efficient Management for Hybrid Memory in Managed Language Runtime

OpenAIRE

Wang , Chenxi; Cao , Ting; Zigman , John; Lv , Fang; Zhang , Yunquan; Feng , Xiaobing

2016-01-01

Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems; International audience; Hybrid memory, which leverages the benefits of traditional DRAM and emerging memory technologies, is a promising alternative for future main memory design. However popular management policies through memory-access recording and page migration may invoke non-trivial overhead in execution time and hardware space. Nowadays, managed language applications are increasingly dominant in every kind of platform. M...

Impulse: Memory System Support for Scientific Applications

Directory of Open Access Journals (Sweden)

John B. Carter

1999-01-01

Full Text Available Impulse is a new memory system architecture that adds two important features to a traditional memory controller. First, Impulse supports application‐specific optimizations through configurable physical address remapping. By remapping physical addresses, applications control how their data is accessed and cached, improving their cache and bus utilization. Second, Impulse supports prefetching at the memory controller, which can hide much of the latency of DRAM accesses. Because it requires no modification to processor, cache, or bus designs, Impulse can be adopted in conventional systems. In this paper we describe the design of the Impulse architecture, and show how an Impulse memory system can improve the performance of memory‐bound scientific applications. For instance, Impulse decreases the running time of the NAS conjugate gradient benchmark by 67%. We expect that Impulse will also benefit regularly strided, memory‐bound applications of commercial importance, such as database and multimedia programs.

Eye movement monitoring reveals differential influences of emotion on memory

Directory of Open Access Journals (Sweden)

Lily Riggs

2010-11-01

Full Text Available Research shows that memory for emotional aspects of an event may be enhanced at the cost of impaired memory for surrounding peripheral details. However, this has only been assessed directly via verbal reports which reveal the outcome of a long stream of processing but cannot shed light on how/when emotion may affect the retrieval process. In the present experiment, eye movement monitoring was used as an indirect measure of memory as it can reveal aspects of online memory processing. For example, do emotions modulate the nature of memory representations or the speed with which such memories can be accessed? Participants viewed central negative and neutral scenes surrounded by three neutral objects and after a brief delay, memory was assessed indirectly via eye movement monitoring and then directly via verbal reports. Consistent with the previous literature, emotion enhanced central and impaired peripheral memory as indexed by eye movement scanning and verbal reports. This suggests that eye movement scanning may contribute and/or is related to conscious access of memory. However, the central/peripheral tradeoff effect was not observed in an early measure of eye movement behavior, i.e. participants were faster to orient to a critical region of change in the periphery irrespective of whether it was previously studied in a negative or neutral context. These findings demonstrate emotion’s differential influences on different aspects of retrieval. In particular, emotion appears to affect the detail within, and/or the evaluation of, stored memory representations, but it may not affect the initial access to those representations.

Magnetic vortex racetrack memory

Energy Technology Data Exchange (ETDEWEB)

Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

Customizable Memory Schemes for Data Parallel Architectures

NARCIS (Netherlands)

Gou, C.

2011-01-01

Memory system efficiency is crucial for any processor to achieve high performance, especially in the case of data parallel machines. Processing capabilities of parallel lanes will be wasted, when data requests are not accomplished in a sustainable and timely manner. Irregular vector memory accesses

Full-switching FSF-type superconducting spin-triplet magnetic random access memory element

Science.gov (United States)

Lenk, D.; Morari, R.; Zdravkov, V. I.; Ullrich, A.; Khaydukov, Yu.; Obermeier, G.; Müller, C.; Sidorenko, A. S.; von Nidda, H.-A. Krug; Horn, S.; Tagirov, L. R.; Tidecks, R.

2017-11-01

In the present work a superconducting Co/CoOx/Cu41Ni59 /Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field applied parallel to the film plane. In more detail, around zero applied field, Tc is lower when the field is changed from negative to positive polarity (with respect to the cooling field), compared to the opposite case. We interpret this finding as the result of the generation of the odd-in-frequency triplet component of superconductivity arising at noncollinear orientation of the magnetizations in the Cu41Ni59 layer adjacent to the CoOx layer. This interpretation is supported by superconducting quantum interference device magnetometry, which revealed a correlation between details of the magnetic structure and the observed superconducting spin-valve effects. Readout of information is possible at zero applied field and, thus, no permanent field is required to stabilize both states. Consequently, this system represents a superconducting magnetic random access memory element for superconducting electronics. By applying increased transport currents, the system can be driven to the full switching mode between the completely superconducting and the normal state.

Breaking the memory wall in MonetDB

NARCIS (Netherlands)

P.A. Boncz (Peter); M.L. Kersten (Martin); S. Manegold (Stefan)

2008-01-01

textabstractIn the past decades, advances in speed of commodity CPUs have far outpaced advances in RAM latency. Main-memory access has therefore become a performance bottleneck for many computer applications; a phenomenon that is widely known as the "memory wall." In this paper, we report how

39% access time improvement, 11% energy reduction, 32 kbit 1-read/1-write 2-port static random-access memory using two-stage read boost and write-boost after read sensing scheme

Science.gov (United States)

Yamamoto, Yasue; Moriwaki, Shinichi; Kawasumi, Atsushi; Miyano, Shinji; Shinohara, Hirofumi

2016-04-01

We propose novel circuit techniques for 1 clock (1CLK) 1 read/1 write (1R/1W) 2-port static random-access memories (SRAMs) to improve read access time (tAC) and write margins at low voltages. Two-stage read boost (TSR-BST) and write word line boost (WWL-BST) after the read sensing schemes have been proposed. TSR-BST reduces the worst read bit line (RBL) delay by 61% and RBL amplitude by 10% at V DD = 0.5 V, which improves tAC by 39% and reduces energy dissipation by 11% at V DD = 0.55 V. WWL-BST after read sensing scheme improves minimum operating voltage (V min) by 140 mV. A 32 kbit 1CLK 1R/1W 2-port SRAM with TSR-BST and WWL-BST has been developed using a 40 nm CMOS.

Generic database cost models for hierarchical memory systems

NARCIS (Netherlands)

S. Manegold (Stefan); P.A. Boncz (Peter); M.L. Kersten (Martin)

2002-01-01

textabstractAccurate prediction of operator execution time is a prerequisite fordatabase query optimization. Although extensively studied for conventionaldisk-based DBMSs, cost modeling in main-memory DBMSs is still an openissue. Recent database research has demonstrated that memory access ismore

Leading research report for fiscal 1999. Fundamental technology of spin electronic device; 1999 nendo spin toronikusu soshi kiban gijutsu kenkyu hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

The project, with attention paid to both spin and charge of electrons, aims to draw the best of the said two attributes of electrons by use of the state of the art in manufacturing technology for the creation of novel electronic devices. The nonvolatile MRAM (magnetic random access memory), which is the nearest to commercialization, is a tunnel device consisting of two sheet-shape ferromagnetic metal electrodes and an insulator film sandwiched between the said two electrodes, with the lower electrode magnetized only in one direction. The tunnel resistance changes when the magnetization direction in the upper electrode changes left and right (1, 0) according to an external writing magnetic field, and this enables nondestructive readout. The upper electrode magnetization direction remains unchanged thanks to hysteresis when the external writing magnetic field is turned off, and this allows the device to serve as a nonvolatile memory device. The device has a potential for higher speeds and enhanced integration. Much is also expected from a spin conduction functional device utilizing spin-dependent electric conduction, spin optical function device, spin quantum calculation directly utilizing quantum state, magnetic field sensor, etc. Their importance is great economically and socially, and technologies relating to magnetism and semiconductor should be merged for their further development. (NEDO)

Difference in Subjective Accessibility of On Demand Recall of Visual, Taste, and Olfactory Memories

Directory of Open Access Journals (Sweden)

Petr Zach

2018-01-01

Full Text Available We present here significant difference in the evocation capability between sensory memories (visual, taste, and olfactory throughout certain categories of the population. As object for this memory recall we selected French fries that are simple and generally known. From daily life we may intuitively feel that there is much better recall of the visual and auditory memory compared to the taste and olfactory ones. Our results in young (age 12–21 years mostly females and some males show low capacity for smell and taste memory recall compared to far greater visual memory recall. This situation raises question whether we could train smell and taste memory recall so that it could become similar to visual or auditory ones. In our article we design technique of the volunteers training that could potentially lead to an increase in the capacity of their taste and olfactory memory recollection.

A 32-bit computer for large memory applications on the FASTBUS

International Nuclear Information System (INIS)

Kellner, R.; Blossom, J.M.; Hung, J.P.

1985-01-01

A FASTBUS based 32-bit computer is being built at Los Alamos National Laboratory for use in systems requiring large fast memory in the FASTBUS environment. A separate local execution bus allows data reduction to proceed concurrently with other FASTBUS operations. The computer, which can operate in either master or slave mode, includes the National Semiconductor NS32032 chip set with demand paged memory management, floating point slave processor, interrupt control unit, timers, and time-of-day clock. The 16.0 megabytes of random access memory are interleaved to allow windowed direct memory access on and off the FASTBUS at 80 megabytes per second

Breaking the memory wall in MonetDB

NARCIS (Netherlands)

Boncz, P.A.; Kersten, M.L.; Manegold, S.

2008-01-01

In the past decades, advances in speed of commodity CPUs have far outpaced advances in RAM latency. Main-memory access has therefore become a performance bottleneck for many computer applications; a phenomenon that is widely known as the "memory wall." In this paper, we report how research around

Improving the Performance and Energy Efficiency of Phase Change Memory Systems

Institute of Scientific and Technical Information of China (English)

王琪; 李佳芮; 王东辉

2015-01-01

Phase change memory (PCM) is a promising technology for future memory thanks to its better scalability and lower leakage power than DRAM (dynamic random-access memory). However, adopting PCM as main memory needs to overcome its write issues, such as long write latency and high write power. In this paper, we propose two techniques to improve the performance and energy-efficiency of PCM memory systems. First, we propose a victim cache technique utilizing the existing buffer in the memory controller to reduce PCM memory accesses. The key idea is reorganizing the buffer into a victim cache structure (RBC) to provide additional hits for the LLC (last level cache). Second, we propose a chip parallelism-aware replacement policy (CPAR) for the victim cache to further improve performance. Instead of evicting one cache line once, CPAR evicts multiple cache lines that access different PCM chips. CPAR can reduce the frequent victim cache eviction and improve the write parallelism of PCM chips. The evaluation results show that, compared with the baseline, RBC can improve PCM memory system performance by up to 9.4% and 5.4% on average. Combing CPAR with RBC (RBC+CPAR) can improve performance by up to 19.0% and 12.1% on average. Moreover, RBC and RBC+CPAR can reduce memory energy consumption by 8.3%and 6.6%on average, respectively.

Assessment of the effects of atmospheric neutrons on onboard electronic equipment and search for hardening solutions

International Nuclear Information System (INIS)

Renard, S.

2013-01-01

This work deals with the impact of atmospheric neutrons on complex electronic components such as built-in memories or processors. The first part describes the radiation environment, the neutron-matter interaction and the consequences on electronic devices, and presents the commonly used experimental simulations and the testing methods. The potential of laser beam for testing is highlighted. The second chapter presents the development of a testing platform for various types of memories (MRAM and SDRAM). The equipment and the dedicated software are described. A testing platform for processor is also presented. The third chapter is dedicated to the presentation of a 4 Mbit bulk-type SRAM memory and of its testing involving a laser beam equipment. Several results show the presence of error clusters that may endangered the memory as a whole. These error clusters are due to the architecture of the internal addressing scheme of the memory. The simulation of these error clusters must be improved in order to define an optimized strategy of hardening

Generic Database Cost Models for Hierarchical Memory Systems

NARCIS (Netherlands)

S. Manegold (Stefan); P.A. Boncz (Peter); M.L. Kersten (Martin)

2002-01-01

textabstractAccurate prediction of operator execution time is a prerequisite for database query optimization. Although extensively studied for conventional disk-based DBMSs, cost modeling in main-memory DBMSs is still an open issue. Recent database research has demonstrated that memory access is

Hybrid Josephson-CMOS Memory in Advanced Technologies and Larger Sizes

International Nuclear Information System (INIS)

Liu, Q; Van Duzer, T; Fujiwara, K; Yoshikawa, N

2006-01-01

Recent progress on demonstrating components of the 64 kb Josephson-CMOS hybrid memory has encouraged exploration of the advancement possible with use of advanced technologies for both the Josephson and CMOS parts of the memory, as well as considerations of the effect of memory size on access time and power dissipation. The simulations to be reported depend on the use of an approximate model for 90 nm CMOS at 4 K. This model is an extension of the one we developed for 0.25 μm CMOS and have already verified. For the Josephson parts, we have chosen 20 kA/cm 2 technology, which was recently demonstrated. The calculations show that power dissipation and access time increase rather slowly with increasing size of the memory

45 CFR 2490.150 - Program accessibility: Existing facilities.

Science.gov (United States)

2010-10-01

... 45 Public Welfare 4 2010-10-01 2010-10-01 false Program accessibility: Existing facilities. 2490.150 Section 2490.150 Public Welfare Regulations Relating to Public Welfare (Continued) JAMES MADISON... ACTIVITIES CONDUCTED BY THE JAMES MADISON MEMORIAL FELLOWSHIP FOUNDATION § 2490.150 Program accessibility...

A review of emerging non-volatile memory (NVM) technologies and applications

Science.gov (United States)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application

Science.gov (United States)

Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-04-01

We propose a new version of the post fabrication static random access memory (SRAM) self-improvement technique, which utilizes multiple stress application. It is demonstrated that, using a device matrix array (DMA) test element group (TEG) with intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) six-transistor (6T) SRAM cells fabricated by the 65 nm technology, the lowering of data retention voltage (DRV) is more effectively achieved than using the previously proposed single stress technique.

Routes to the past: Neural substrates of direct and generative autobiographical memory retrieval

OpenAIRE

Addis, Donna Rose; Knapp, Katie; Roberts, Reece P.; Schacter, Daniel L.

2011-01-01

Models of autobiographical memory propose two routes to retrieval depending on cue specificity. When available cues are specific and personally-relevant, a memory can be directly accessed. However, when available cues are generic, one must engage a generative retrieval process to produce more specific cues to successfully access a relevant memory. The current study sought to characterize the neural bases of these retrieval processes. During functional magnetic resonance imaging (fMRI), partic...

An energy efficient and high speed architecture for convolution computing based on binary resistive random access memory

Science.gov (United States)

Liu, Chen; Han, Runze; Zhou, Zheng; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

2018-04-01

In this work we present a novel convolution computing architecture based on metal oxide resistive random access memory (RRAM) to process the image data stored in the RRAM arrays. The proposed image storage architecture shows performances of better speed-device consumption efficiency compared with the previous kernel storage architecture. Further we improve the architecture for a high accuracy and low power computing by utilizing the binary storage and the series resistor. For a 28 × 28 image and 10 kernels with a size of 3 × 3, compared with the previous kernel storage approach, the newly proposed architecture shows excellent performances including: 1) almost 100% accuracy within 20% LRS variation and 90% HRS variation; 2) more than 67 times speed boost; 3) 71.4% energy saving.

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing

Energy Technology Data Exchange (ETDEWEB)

Kang, Dae Yun; Lee, Tae-Ho; Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of)

2016-08-15

The authors report an improvement in resistive switching (RS) characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO)-based resistive random access memory devices using hydrogen post-annealing. Because this a-IGZO thin film has oxygen off-stoichiometry in the form of deficient and excessive oxygen sites, the film properties can be improved by introducing hydrogen atoms through the annealing process. After hydrogen post-annealing, the device exhibited a stable bipolar RS, low-voltage set and reset operation, long retention (>10{sup 5 }s), good endurance (>10{sup 6} cycles), and a narrow distribution in each current state. The effect of hydrogen post-annealing is also investigated by analyzing the sample surface using X-ray photon spectroscopy and atomic force microscopy.

Recollection Rejection: How Children Edit Their False Memories.

Science.gov (United States)

Brainerd, C. J.; Reyna, V. F.

2002-01-01

Presents new measure of children's use of an editing operation that suppresses false memories by accessing verbatim traces of true events. Application of the methodology showed that false-memory editing increased dramatically between early and middle childhood. Measure reacted appropriately to experimental manipulations. Developmental reductions…

Gender Barriers to Access to Antiretroviral Therapy and its Link to ...

African Journals Online (AJOL)

Gender Barriers to Access to Antiretroviral Therapy and its Link to ... to assess executive function, verbal fluency, working memory, learning memory, recall, ... there were no gender differences in performance in the neuropsychological testing.

Forgetting: the availability, accessibility, and intentional control problem. Part 2

Directory of Open Access Journals (Sweden)

Veronika V. Nourkova

2016-12-01

Full Text Available The paper focuses on the phenomenon of forgetting as a primal and generally productive memory process. The cases that require temporary and permanent forgetting of the data stored in the long-term memory are contrasted. The main methodological obstacle in forgetting research is identified as arising from the logical prohibition to argument from the negative, i.e. “the evidence of absence is not the evidence of absence”. Two mechanisms of forgetting are discussed in the paper: transformation of the memory trace and modulation of trace accessibility. The former mechanism of forgetting consists of memory trace destruction (memory trace decay, retroactive and proactive interference, and «catastrophic» interference or its transformation that leads to forming a new memory representation. The most promising way to legitimize the trace destruction mechanism is narrowing the further research to episodic memory subsystem. The latter mechanism of forgetting consists of both passive failure in access to appropriate memory content (the tip of the tongue phenomenon, the category size effect, the fan effect and the process of active retrieval inhibition. This phenomenon represents temporary inhibition of competing semantically similar responses in semantic memory, and motivational inhibition of self-deprecating memories in autobiographical memory. Thus, a variety of experimental paradigms in intentional forgetting research are considered. Contrary to the common claim that forgetting is а universal and homogeneous phenomenon, we propose that forgetting strategies might vary in different memory subsystems, and also depend on activity characteristics during encoding, storage and retrieval.

The aftermath of memory retrieval for recycling visual working memory representations.

Science.gov (United States)

Park, Hyung-Bum; Zhang, Weiwei; Hyun, Joo-Seok

2017-07-01

We examined the aftermath of accessing and retrieving a subset of information stored in visual working memory (VWM)-namely, whether detection of a mismatch between memory and perception can impair the original memory of an item while triggering recognition-induced forgetting for the remaining, untested items. For this purpose, we devised a consecutive-change detection task wherein two successive testing probes were displayed after a single set of memory items. Across two experiments utilizing different memory-testing methods (whole vs. single probe), we observed a reliable pattern of poor performance in change detection for the second test when the first test had exhibited a color change. The impairment after a color change was evident even when the same memory item was repeatedly probed; this suggests that an attention-driven, salient visual change made it difficult to reinstate the previously remembered item. The second change detection, for memory items untested during the first change detection, was also found to be inaccurate, indicating that recognition-induced forgetting had occurred for the unprobed items in VWM. In a third experiment, we conducted a task that involved change detection plus continuous recall, wherein a memory recall task was presented after the change detection task. The analyses of the distributions of recall errors with a probabilistic mixture model revealed that the memory impairments from both visual changes and recognition-induced forgetting are explained better by the stochastic loss of memory items than by their degraded resolution. These results indicate that attention-driven visual change and recognition-induced forgetting jointly influence the "recycling" of VWM representations.

Storage and binding of object features in visual working memory

OpenAIRE

Bays, Paul M; Wu, Emma Y; Husain, Masud

2010-01-01

An influential conception of visual working memory is of a small number of discrete memory “slots”, each storing an integrated representation of a single visual object, including all its component features. When a scene contains more objects than there are slots, visual attention controls which objects gain access to memory.

Classic and contemporary perspectives on memory

Directory of Open Access Journals (Sweden)

Bentosela, Mariana

2009-06-01

Full Text Available Humans organize past events as “memories”, i.e. what we learn is encoded and stored in the brain, and by accumulating relevant environmental information we better cope with similar situations in the future. The main research on memory began in the 70s and the most important conclusions have been derived, on the one hand, from animal experiments, and on the other hand, from clinical studies of amnesic patients. Many classification systems of memory have been proposed. First, authors have distinguished among the different phases involved in the process of memory formation: short-term and long-term memory. Second, declarative and non-declarative memories have been recognized. Last, researchers have conceived the need to evaluate memory in a systematic manner through behavioral as well as pharmacological means, in different moments or times to be able to have independent access to the study of the different memory phases or types of memory. This approach to the study of memory has allowed evaluating drug effects on memory and also understanding the molecular mechanisms involved in memory processes. In addition, this research has also aimed at studying brain regions implicated in the diverse memory phenomena under investigation.

An Account of the Accessioned Specimens in the Jose Vera Santos Memorial Herbarium, University of the Philippines Diliman

Directory of Open Access Journals (Sweden)

Sandra L. Yap

2013-12-01

Full Text Available The University of the Philippines Herbarium was established in 1908 and originally located in Ermita, Manila. The majority of its pre-war collections were destroyed during World War II, and no formal records of its specimens were preserved. Since then, multiple efforts to restore and improve the Herbarium have been proposed and implemented, most notably its move to the UP Diliman campus. In 1999, the Herbarium was off icially renamed as the Jose Vera Santos Memorial Herbarium after the noted grass expert, who initiated rehabilitation work in the Herbarium after the war. The Herbarium is registered with the international code PUH in the Index Herbariorum, a global directory of public herbaria managed by the New York Botanical Garden. To assess the accessioned (uniquely numbered and recorded collection of the Herbarium, an electronic database of its accessions was created.The Herbarium currently contains 14,648 accessions, 12,681 (86.6% of which were collected in the Philippines. This is comprised of 309 families, 1903 genera, and 4485 distinct species. Thirty-nine type specimens form part of the collection, only one of which is a holotype. On the basis of major plant groups, angiosperms make up 71% of the collection. Unsurprisingly, Family Poaceae has the largest number of specimens at 2,759 accessions. The earliest dated Philippine specimen was collected by E.D. Merrill in 1902, and roughly half of the total accessioned specimens were collected in the 1950s and 1970s. The two most prolif ic collectors were Santos and Leonardo L. Co, with 2,320 and 2,147 specimens, respectively. Luzon is the most well-represented island group with 2,752 specimens collected in Metro Manila alone. At present, PUH Curator James V. LaFrankie is working on the expansion of the collection and upgrading of the herbarium to encourage future educational and research activities.

Event memory and moving in a well-known environment.

Science.gov (United States)

Tamplin, Andrea K; Krawietz, Sabine A; Radvansky, Gabriel A; Copeland, David E

2013-11-01

Research in narrative comprehension has repeatedly shown that when people read about characters moving in well-known environments, the accessibility of object information follows a spatial gradient. That is, the accessibility of objects is best when they are in the same room as the protagonist, and it becomes worse the farther away they are see, e.g., Morrow, Greenspan, & Bower, (Journal of Memory and Language, 26, 165-187, 1987). In the present study, we assessed this finding using an interactive environment in which we had people memorize a map and navigate a virtual simulation of the area. During navigation, people were probed with pairs of object names and indicated whether both objects were in the same room. In contrast to the narrative studies described above, several experiments showed no evidence of a clear spatial gradient. Instead, memory for objects in currently occupied locations (e.g., the location room) was more accessible, especially after a small delay, but no clear decline was evident in the accessibility of information in memory with increased distance. Also, memory for objects along the pathway of movement (i.e., rooms that a person only passed through) showed a transitory suppression effect that was present immediately after movement, but attenuated over time. These results were interpreted in light of the event horizon model of event cognition.

Beyond the magic number four: Remapping high-capacity, pre-attentive, fragile working memory

NARCIS (Netherlands)

Zerr, P.; Gayet, S.; Mulder, K.T.; Sligte, I.G.; Stigchel, S. van der

2017-01-01

Visual short term memory allows us to access visual information after termination of its retinal input. Generally, a distinction is made between a robust, capacity-limited form (working memory, WM) and high-capacity, pre-attentive, maskable forms (sensory memory, e.g. fragile memory, FM). Eye

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

International Nuclear Information System (INIS)

Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

2016-01-01

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Chromatin accessibility prediction via convolutional long short-term memory networks with k-mer embedding.

Science.gov (United States)

Min, Xu; Zeng, Wanwen; Chen, Ning; Chen, Ting; Jiang, Rui

2017-07-15

Experimental techniques for measuring chromatin accessibility are expensive and time consuming, appealing for the development of computational approaches to predict open chromatin regions from DNA sequences. Along this direction, existing methods fall into two classes: one based on handcrafted k -mer features and the other based on convolutional neural networks. Although both categories have shown good performance in specific applications thus far, there still lacks a comprehensive framework to integrate useful k -mer co-occurrence information with recent advances in deep learning. We fill this gap by addressing the problem of chromatin accessibility prediction with a convolutional Long Short-Term Memory (LSTM) network with k -mer embedding. We first split DNA sequences into k -mers and pre-train k -mer embedding vectors based on the co-occurrence matrix of k -mers by using an unsupervised representation learning approach. We then construct a supervised deep learning architecture comprised of an embedding layer, three convolutional layers and a Bidirectional LSTM (BLSTM) layer for feature learning and classification. We demonstrate that our method gains high-quality fixed-length features from variable-length sequences and consistently outperforms baseline methods. We show that k -mer embedding can effectively enhance model performance by exploring different embedding strategies. We also prove the efficacy of both the convolution and the BLSTM layers by comparing two variations of the network architecture. We confirm the robustness of our model to hyper-parameters by performing sensitivity analysis. We hope our method can eventually reinforce our understanding of employing deep learning in genomic studies and shed light on research regarding mechanisms of chromatin accessibility. The source code can be downloaded from https://github.com/minxueric/ismb2017_lstm . tingchen@tsinghua.edu.cn or ruijiang@tsinghua.edu.cn. Supplementary materials are available at

Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions

Directory of Open Access Journals (Sweden)

Mingyang Gong

2018-06-01

Full Text Available Static Random Access Memory (SRAM Physical Unclonable Functions (PUFs are some of the most popular PUFs that provide a highly-secured solution for secret key storage. Given that PUF responses are noisy, the key reconstruction must use error correcting code (ECC to reduce the noise. Repetition code is widely used in resource constrained systems as it is concise and lightweight, however, research has shown that repetition codes can lead to information leakage. In this paper we found that the strongest cell distribution in a SRAM array may leak information of the responses of SRAM PUF when the repetition code is directly applied. Experimentally, on an ASIC platform with the HHGRACE 0.13 μm process, we recovered 8.3% of the measured response using the strongest cells revealed by the helper data, and we finally obtained a clone response 79% similar to weak response using the public helper data. We therefore propose Error Resistant Fuzzy Extractor (ERFE, a 4-bit error tolerant fuzzy extractor, that extracts the value of the sum of the responses as a unique key and reduces the failure rate to 1.8 × 10−8 with 256 bit entropy.

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Directory of Open Access Journals (Sweden)

Bo Jin

2014-12-01

Full Text Available Phase change random access memory (PCRAM devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM and the encapsulating layer material (YELM according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.

Read method compensating parasitic sneak currents in a crossbar memristive memory

KAUST Repository

Zidan, Mohammed A.

2017-03-02

Methods are provided for mitigating problems caused by sneak- paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: -reading a value of the target memory cell; and -calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an "initial bits" strategy or a "dummy bits" strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout. In addition, these strategies consume an order of magnitude less power in comparison to alternative state-of-the-art readout techniques.

Saying What's on Your Mind: Working Memory Effects on Sentence Production

Science.gov (United States)

Slevc, L. Robert

2011-01-01

The role of working memory (WM) in sentence comprehension has received considerable interest, but little work has investigated how sentence production relies on memory mechanisms. Three experiments investigated speakers' tendency to produce syntactic structures that allow for early production of material that is accessible in memory. In Experiment…

With sadness comes accuracy; with happiness, false memory: mood and the false memory effect.

Science.gov (United States)

Storbeck, Justin; Clore, Gerald L

2005-10-01

The Deese-Roediger-McDermott paradigm lures people to produce false memories. Two experiments examined whether induced positive or negative moods would influence this false memory effect. The affect-as-information hypothesis predicts that, on the one hand, positive affective cues experienced as task-relevant feedback encourage relational processing during encoding, which should enhance false memory effects. On the other hand, negative affective cues are hypothesized to encourage item-specific processing at encoding, which should discourage such effects. The results of Experiment 1 are consistent with these predictions: Individuals in negative moods were significantly less likely to show false memory effects than those in positive moods or those whose mood was not manipulated. Experiment 2 introduced inclusion instructions to investigate whether moods had their effects at encoding or retrieval. The results replicated the false memory finding of Experiment 1 and provide evidence that moods influence the accessibility of lures at encoding, rather than influencing monitoring at retrieval of whether lures were actually presented.

Unstructured Adaptive Meshes: Bad for Your Memory?

Science.gov (United States)

Biswas, Rupak; Feng, Hui-Yu; VanderWijngaart, Rob

2003-01-01

This viewgraph presentation explores the need for a NASA Advanced Supercomputing (NAS) parallel benchmark for problems with irregular dynamical memory access. This benchmark is important and necessary because: 1) Problems with localized error source benefit from adaptive nonuniform meshes; 2) Certain machines perform poorly on such problems; 3) Parallel implementation may provide further performance improvement but is difficult. Some examples of problems which use irregular dynamical memory access include: 1) Heat transfer problem; 2) Heat source term; 3) Spectral element method; 4) Base functions; 5) Elemental discrete equations; 6) Global discrete equations. Nonconforming Mesh and Mortar Element Method are covered in greater detail in this presentation.

Conglomerate memory and cosmopolitanism

Directory of Open Access Journals (Sweden)

Susannah Ryan

2016-01-01

Full Text Available Under what conditions do countries and cultures considered radically different find a basis for allegiance and kinship? What part does memory play in this process? This article responds to these questions in two ways: 1 Through Emmanuel Levinas and Hannah Arendt, I propose that when an other appears in empathetic discourses that both honor difference and cite shared human experiences, seemingly irreconcilable people can develop a sense of mutual responsibility and 2 Conglomerate memory, memories that fuse together others through common pains, contributes to such an appearance. To illustrate this point, I turn to Congolese voices as they are articulated in online American discourses; although currently, authors of online texts typically rely on traditional narrative forms that position Central Africa as incommensurate to Western civilizations, the Internet's worldwide accessibility and intertextual capacities render it a place primed for developing international collectives by connecting memories while maintaining difference.

Generic Database Cost Models for Hierarchical Memory Systems

OpenAIRE

Manegold, Stefan; Boncz, Peter; Kersten, Martin

2002-01-01

textabstractAccurate prediction of operator execution time is a prerequisite for database query optimization. Although extensively studied for conventional disk-based DBMSs, cost modeling in main-memory DBMSs is still an open issue. Recent database research has demonstrated that memory access is more and more becoming a significant---if not the major---cost component of database operations. If used properly, fast but small cache memories---usually organized in cascading hierarchy between CPU ...

Working Memory Underpins Cognitive Development, Learning, and Education

Science.gov (United States)

Cowan, Nelson

2014-01-01

Working memory is the retention of a small amount of information in a readily accessible form. It facilitates planning, comprehension, reasoning, and problem solving. I examine the historical roots and conceptual development of the concept and the theoretical and practical implications of current debates about working memory mechanisms. Then, I…

All-printed paper memory

KAUST Repository

Lien, Derhsien

2014-08-26

We report the memory device on paper by means of an all-printing approach. Using a sequence of inkjet and screen-printing techniques, a simple metal-insulator-metal device structure is fabricated on paper as a resistive random access memory with a potential to reach gigabyte capacities on an A4 paper. The printed-paper-based memory devices (PPMDs) exhibit reproducible switching endurance, reliable retention, tunable memory window, and the capability to operate under extreme bending conditions. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease of data handling, which are not achievable for regular silicon-based electronic devices. We envision that the PPMDs manufactured by this cost-effective and time-efficient all-printing approach would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multifunctional devices, and self-powered systems. © 2014 American Chemical Society.

High capacity, high speed histogramming data acquisition memory

International Nuclear Information System (INIS)

Epstein, A.; Boulin, C.

1996-01-01

A double width CAMAC DRAM store module was developed for use as a histogramming memory in fast time-resolved synchrotron radiation applications to molecular biology. High speed direct memory modify (3 MHz) is accomplished by using a discrete DRAM controller and fast page mode access. The module can be configured using standard SIMMs to sizes of up to 64M-words. The word width is 16 bit and the module can handle overflows by storing the overflow addresses in a dedicated FIFO. Simultaneous front panel DMM/DMI access and CAMAC readout of the overflow addresses is supported

Multiple Memory Stores and Operant Conditioning: A Rationale for Memory's Complexity

Science.gov (United States)

Meeter, Martijn; Veldkamp, Rob; Jin, Yaochu

2009-01-01

Why does the brain contain more than one memory system? Genetic algorithms can play a role in elucidating this question. Here, model animals were constructed containing a dorsal striatal layer that controlled actions, and a ventral striatal layer that controlled a dopaminergic learning signal. Both layers could gain access to three modeled memory…

Are there multiple visual short-term memory stores?

Science.gov (United States)

Sligte, Ilja G; Scholte, H Steven; Lamme, Victor A F

2008-02-27

Classic work on visual short-term memory (VSTM) suggests that people store a limited amount of items for subsequent report. However, when human observers are cued to shift attention to one item in VSTM during retention, it seems as if there is a much larger representation, which keeps additional items in a more fragile VSTM store. Thus far, it is not clear whether the capacity of this fragile VSTM store indeed exceeds the traditional capacity limits of VSTM. The current experiments address this issue and explore the capacity, stability, and duration of fragile VSTM representations. We presented cues in a change-detection task either just after off-set of the memory array (iconic-cue), 1,000 ms after off-set of the memory array (retro-cue) or after on-set of the probe array (post-cue). We observed three stages in visual information processing 1) iconic memory with unlimited capacity, 2) a four seconds lasting fragile VSTM store with a capacity that is at least a factor of two higher than 3) the robust and capacity-limited form of VSTM. Iconic memory seemed to depend on the strength of the positive after-image resulting from the memory display and was virtually absent under conditions of isoluminance or when intervening light masks were presented. This suggests that iconic memory is driven by prolonged retinal activation beyond stimulus duration. Fragile VSTM representations were not affected by light masks, but were completely overwritten by irrelevant pattern masks that spatially overlapped the memory array. We find that immediately after a stimulus has disappeared from view, subjects can still access information from iconic memory because they can see an after-image of the display. After that period, human observers can still access a substantial, but somewhat more limited amount of information from a high-capacity, but fragile VSTM that is overwritten when new items are presented to the eyes. What is left after that is the traditional VSTM store, with a limit of

Are there multiple visual short-term memory stores?

Directory of Open Access Journals (Sweden)

Ilja G Sligte

Full Text Available BACKGROUND: Classic work on visual short-term memory (VSTM suggests that people store a limited amount of items for subsequent report. However, when human observers are cued to shift attention to one item in VSTM during retention, it seems as if there is a much larger representation, which keeps additional items in a more fragile VSTM store. Thus far, it is not clear whether the capacity of this fragile VSTM store indeed exceeds the traditional capacity limits of VSTM. The current experiments address this issue and explore the capacity, stability, and duration of fragile VSTM representations. METHODOLOGY/PRINCIPAL FINDINGS: We presented cues in a change-detection task either just after off-set of the memory array (iconic-cue, 1,000 ms after off-set of the memory array (retro-cue or after on-set of the probe array (post-cue. We observed three stages in visual information processing 1 iconic memory with unlimited capacity, 2 a four seconds lasting fragile VSTM store with a capacity that is at least a factor of two higher than 3 the robust and capacity-limited form of VSTM. Iconic memory seemed to depend on the strength of the positive after-image resulting from the memory display and was virtually absent under conditions of isoluminance or when intervening light masks were presented. This suggests that iconic memory is driven by prolonged retinal activation beyond stimulus duration. Fragile VSTM representations were not affected by light masks, but were completely overwritten by irrelevant pattern masks that spatially overlapped the memory array. CONCLUSIONS/SIGNIFICANCE: We find that immediately after a stimulus has disappeared from view, subjects can still access information from iconic memory because they can see an after-image of the display. After that period, human observers can still access a substantial, but somewhat more limited amount of information from a high-capacity, but fragile VSTM that is overwritten when new items are presented

Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application

Science.gov (United States)

Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; Jeon, Seung-Bae; Ahn, Daechul; Park, Sang-Jae; Park, Jun-Young; Choi, Yang-Kyu

2016-12-01

We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has a hydroscopic property hence it can be soluble in water. In terms of physical security of memory devices, prompt abrogation of a memory device which stored a large number of data is crucial when it is stolen because all of things have identified information in the memory device. By utilizing the SSG paper as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good data retention of longer than 106 seconds and cycling endurance of 300 cycles. This memory device is dissolved within 10 seconds thus it can never be recovered or replicated. By employing direct printing but not lithography technology to aim low cost and disposable applications, the memory capacity tends to be limited less than kilo-bits. However, unlike high memory capacity demand for consumer electronics, the proposed device is targeting for security applications. With this regards, the sub-kilobit memory capacity should find the applications such as one-time usable personal identification, authentication code storage, cryptography key, and smart delivery tag. This aspect is attractive for security and protection system against unauthorized accessibility.

Web based dosimetry system for reading and monitoring dose through internet access

International Nuclear Information System (INIS)

Perle, S.C.; Bennett, K.; Kahilainen, J.; Vuotila, M.

2010-01-01

The Instadose TM dosemeter from Mirion Technologies is a small, rugged device based on patented direct ion storage technology and is accredited by the National Voluntary Laboratory Accreditation Program (NVLAP) through NIST, bringing radiation monitoring into the digital age. Smaller than a flash drive, this dosemeter provides an instant read-out when connected to any computer with internet access and a USB connection. Instadose devices provide radiation workers with more flexibility than today's dosemeters. Non Volatile Analog Memory Cell surrounded by a Gas Filled Ion Chamber. Dose changes the amount of Electric Charge in the DIS Analog Memory. The total charge storage capacity of the memory determines the available dose range. The state of the Analog Memory is determined by measuring the voltage across the memory cell. AMP (Account Management Program) provides secure real time access to account details, device assignments, reports and all pertinent account information. Access can be restricted based on the role assignment assigned to an individual. A variety of reports are available for download and customizing. The Advantages of the Instadose dosemeter are: - Unlimited reading capability, - Concerns about a possible exposure can be addressed immediately, - Re-readability without loss of exposure data, with cumulative exposure maintained. (authors)

Web based dosimetry system for reading and monitoring dose through internet access

Energy Technology Data Exchange (ETDEWEB)

Perle, S.C.; Bennett, K.; Kahilainen, J.; Vuotila, M. [Mirion Technologies (United States); Mirion Technologies (Finland)

2010-07-01

The Instadose{sup TM} dosemeter from Mirion Technologies is a small, rugged device based on patented direct ion storage technology and is accredited by the National Voluntary Laboratory Accreditation Program (NVLAP) through NIST, bringing radiation monitoring into the digital age. Smaller than a flash drive, this dosemeter provides an instant read-out when connected to any computer with internet access and a USB connection. Instadose devices provide radiation workers with more flexibility than today's dosemeters. Non Volatile Analog Memory Cell surrounded by a Gas Filled Ion Chamber. Dose changes the amount of Electric Charge in the DIS Analog Memory. The total charge storage capacity of the memory determines the available dose range. The state of the Analog Memory is determined by measuring the voltage across the memory cell. AMP (Account Management Program) provides secure real time access to account details, device assignments, reports and all pertinent account information. Access can be restricted based on the role assignment assigned to an individual. A variety of reports are available for download and customizing. The Advantages of the Instadose dosemeter are: - Unlimited reading capability, - Concerns about a possible exposure can be addressed immediately, - Re-readability without loss of exposure data, with cumulative exposure maintained. (authors)

Marijuana effects on long-term memory assessment and retrieval.

Science.gov (United States)

Darley, C F; Tinklenberg, J R; Roth, W T; Vernon, S; Kopell, B S

1977-05-09

The ability of 16 college-educated male subjects to recall from long-term memory a series of common facts was tested during intoxication with marijuana extract calibrated to 0.3 mg/kg delta-9-tetrahydrocannabinol and during placebo conditions. The subjects' ability to assess their memory capabilities was then determined by measuring how certain they were about the accuracy of their recall performance and by having them predict their performance on a subsequent recognition test involving the same recall items. Marijuana had no effect on recall or recognition performance. These results do not support the view that marijuana provides access to facts in long-term storage which are inaccessible during non-intoxication. During both marijuana and placebo conditions, subjects could accurately predict their recognition memory performance. Hence, marijuana did not alter the subjects' ability to accurately assess what information resides in long-term memory even though they did not have complete access to that information.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

In-memory interconnect protocol configuration registers

Energy Technology Data Exchange (ETDEWEB)

Cheng, Kevin Y.; Roberts, David A.

2017-09-19

Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

In-memory interconnect protocol configuration registers

Science.gov (United States)

Cheng, Kevin Y.; Roberts, David A.

2017-09-19

Systems, apparatuses, and methods for moving the interconnect protocol configuration registers into the main memory space of a node. The region of memory used for storing the interconnect protocol configuration registers may also be made cacheable to reduce the latency of accesses to the interconnect protocol configuration registers. Interconnect protocol configuration registers which are used during a startup routine may be prefetched into the host's cache to make the startup routine more efficient. The interconnect protocol configuration registers for various interconnect protocols may include one or more of device capability tables, memory-side statistics (e.g., to support two-level memory data mapping decisions), advanced memory and interconnect features such as repair resources and routing tables, prefetching hints, error correcting code (ECC) bits, lists of device capabilities, set and store base address, capability, device ID, status, configuration, capabilities, and other settings.

Scaling Non-Regular Shared-Memory Codes by Reusing Custom Loop Schedules

Directory of Open Access Journals (Sweden)

Dimitrios S. Nikolopoulos

2003-01-01

Full Text Available In this paper we explore the idea of customizing and reusing loop schedules to improve the scalability of non-regular numerical codes in shared-memory architectures with non-uniform memory access latency. The main objective is to implicitly setup affinity links between threads and data, by devising loop schedules that achieve balanced work distribution within irregular data spaces and reusing them as much as possible along the execution of the program for better memory access locality. This transformation provides a great deal of flexibility in optimizing locality, without compromising the simplicity of the shared-memory programming paradigm. In particular, the programmer does not need to explicitly distribute data between processors. The paper presents practical examples from real applications and experiments showing the efficiency of the approach.

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

Energy Technology Data Exchange (ETDEWEB)

Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2016-06-28

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Biodegradable Shape Memory Polymers in Medicine.

Science.gov (United States)

Peterson, Gregory I; Dobrynin, Andrey V; Becker, Matthew L

2017-11-01

Shape memory materials have emerged as an important class of materials in medicine due to their ability to change shape in response to a specific stimulus, enabling the simplification of medical procedures, use of minimally invasive techniques, and access to new treatment modalities. Shape memory polymers, in particular, are well suited for such applications given their excellent shape memory performance, tunable materials properties, minimal toxicity, and potential for biodegradation and resorption. This review provides an overview of biodegradable shape memory polymers that have been used in medical applications. The majority of biodegradable shape memory polymers are based on thermally responsive polyesters or polymers that contain hydrolyzable ester linkages. These materials have been targeted for use in applications pertaining to embolization, drug delivery, stents, tissue engineering, and wound closure. The development of biodegradable shape memory polymers with unique properties or responsiveness to novel stimuli has the potential to facilitate the optimization and development of new medical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synaptic Correlates of Working Memory Capacity.

Science.gov (United States)

Mi, Yuanyuan; Katkov, Mikhail; Tsodyks, Misha

2017-01-18

Psychological studies indicate that human ability to keep information in readily accessible working memory is limited to four items for most people. This extremely low capacity severely limits execution of many cognitive tasks, but its neuronal underpinnings remain unclear. Here we show that in the framework of synaptic theory of working memory, capacity can be analytically estimated to scale with characteristic time of short-term synaptic depression relative to synaptic current time constant. The number of items in working memory can be regulated by external excitation, enabling the system to be tuned to the desired load and to clear the working memory of currently held items to make room for new ones. Copyright © 2017 Elsevier Inc. All rights reserved.

High Temperature Memories in SiC Technology

OpenAIRE

Ekström, Mattias

2014-01-01

This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) ...

Rapid influences of cued visual memories on attentional guidance

NARCIS (Netherlands)

van Moorselaar, D.; Battistoni, E.; Theeuwes, J.; Olivers, C.N.L.

2015-01-01

There is evidence that the deployment of attention can be biased by the content of visual working memory. Recently, it has been shown that focusing internal attention to a specific item in memory not only increases the accessibility of that specific item for retrieval, but also results in increased

A Survey of Phase Change Memory Systems

Institute of Scientific and Technical Information of China (English)

夏飞; 蒋德钧; 熊劲; 孙凝晖

2015-01-01

As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

HFB : A FASTBUS multi event double port buffer memory

International Nuclear Information System (INIS)

Cerrito, L.; Lebbolo, H.

1986-01-01

The authors describe here the FB double port buffer memory developed at the LPNHE of the University Paris VI. Its purposes are to make available same features useful in the High Energy environment, to reduce, for a given amount of memory, the dead time data collection in a large size (in term of read-out channels) High Energy experiment and to get a buffer of memory as cheap and reliable as possible. The FB protocol, on the crate and cable side, is exploited using the coupler on 4 PAL's developed by G.Fremont and E.Sanchis. The DATA-Space is divided in 4 independent smaller blocks in a way such that a block can be accessed from a port while a different block is accessed from the other port. The two ports are: A, the FB crate port and B, the FB cable port. The buffer works as a rotary FIFO, looping over the 4 blocks of memory, but allowing for any random access. A mechanism is implemented on the board in order to be able to link different modules placed everywhere. If there are m modules, the looping will be around m 4 memory blocks. A multi event function is implemented on the board. HFB is quiped of two NTA for the DATA-Space on the port ''A'', and a flag to choose between them, to allow for a FB spying of DATA during the DAS dead time. HFB is a buffer of memory which can be used at each stage of a DAS: Frontend, Intermediate (MEB) or final, being completely FB standard. The HFB was designed for the LEP data acquisition system

Belief Inhibition in Children's Reasoning: Memory-Based Evidence

Science.gov (United States)

Steegen, Sara; Neys, Wim De

2012-01-01

Adult reasoning has been shown as mediated by the inhibition of intuitive beliefs that are in conflict with logic. The current study introduces a classic procedure from the memory field to investigate belief inhibition in 12- to 17-year-old reasoners. A lexical decision task was used to probe the memory accessibility of beliefs that were cued…

FPGA Based Intelligent Co-operative Processor in Memory Architecture

DEFF Research Database (Denmark)

Ahmed, Zaki; Sotudeh, Reza; Hussain, Dil Muhammad Akbar

2011-01-01

benefits of PIM, a concept of Co-operative Intelligent Memory (CIM) was developed by the intelligent system group of University of Hertfordshire, based on the previously developed Co-operative Pseudo Intelligent Memory (CPIM). This paper provides an overview on previous works (CPIM, CIM) and realization......In a continuing effort to improve computer system performance, Processor-In-Memory (PIM) architecture has emerged as an alternative solution. PIM architecture incorporates computational units and control logic directly on the memory to provide immediate access to the data. To exploit the potential...

James Joyce, music and memory

OpenAIRE

Brown, Katie

2007-01-01

This thesis, James Joyce, Music and Memory, explores the connection between music and Irish cultural memory in Joyce’s works from Chamber Music to the “pure music” of Finnegans Wake. Overall, it shows that Joyce’s ongoing desire to emulate musical forms must be seen in light of Joyce’s wish to come to terms with Irish cultural history, as these are the driving forces that bring about his changes in style. TARA (Trinity’s Access to Research Archive) has a robust takedown policy. Please cont...

A Neuroanatomical Model of Prefrontal Inhibitory Modulation of Memory Retrieval

Science.gov (United States)

Depue, Brendan E.

2012-01-01

Memory of past experience is essential for guiding goal-related behavior. Being able to control accessibility of memory through modulation of retrieval enables humans to flexibly adapt to their environment. Understanding the specific neural pathways of how this control is achieved has largely eluded cognitive neuroscience. Accordingly, in the current paper I review literature that examines the overt control over retrieval in order to reduce accessibility. I first introduce three hypotheses of inhibition of retrieval. These hypotheses involve: i) attending to other stimuli as a form of diversionary attention, ii) inhibiting the specific individual neural representation of the memory, and iii) inhibiting the hippocampus and retrieval process more generally to prevent reactivation of the representation. I then analyze literature taken from the White Bear Suppression, Directed Forgetting and Think/No-Think tasks to provide evidence for these hypotheses. Finally, a neuroanatomical model is developed to indicate three pathways from PFC to the hippocampal complex that support inhibition of memory retrieval. Describing these neural pathways increases our understanding of control over memory in general. PMID:22374224

Contexts and Control Operations Used in Accessing List-Specific, Generalized, and Semantic Memories

Science.gov (United States)

Humphreys, Michael S.; Murray, Krista L.; Maguire, Angela M.

2009-01-01

The human ability to focus memory retrieval operations on a particular list, episode or memory structure has not been fully appreciated or documented. In Experiment 1-3, we make it increasingly difficult for participants to switch between a less recent list (multiple study opportunities), and a more recent list (single study opportunity). Task…

Loss of object recognition memory produced by extended access to methamphetamine self-administration is reversed by positive allosteric modulation of metabotropic glutamate receptor 5.

Science.gov (United States)

Reichel, Carmela M; Schwendt, Marek; McGinty, Jacqueline F; Olive, M Foster; See, Ronald E

2011-03-01

Chronic methamphetamine (meth) abuse can lead to persisting cognitive deficits. Here, we utilized a long-access meth self-administration (SA) protocol to assess recognition memory and metabotropic glutamate receptor (mGluR) expression, and the possible reversal of cognitive impairments with the mGluR5 allosteric modulator, 3-cyano-N-(1,3-diphenyl-1H-pyrazol-5-yl) benzamide (CDPPB). Male, Long-Evans rats self-administered i.v. meth (0.02 mg/infusion) on an FR1 schedule of reinforcement or received yoked-saline infusions. After seven daily 1-h sessions, rats were switched to 6-h daily sessions for 14 days, and then underwent drug abstinence. Rats were tested for object recognition memory at 1 week after meth SA at 90 min and 24 h retention intervals. In a separate experiment, rats underwent the same protocol, but received either vehicle or CDPPB (30 mg/kg) after familiarization. Rats were killed on day 8 or 14 post-SA and brain tissue was obtained. Meth intake escalated over the extended access period. Additionally, meth-experienced rats showed deficits in both short- and long-term recognition memory, demonstrated by a lack of novel object exploration. The deficit at 90 min was reversed by CDPPB treatment. On day 8, meth intake during SA negatively correlated with mGluR expression in the perirhinal and prefrontal cortex, and mGluR5 receptor expression was decreased 14 days after discontinuation of meth. This effect was specific to mGluR5 levels in the perirhinal cortex, as no differences were identified in the hippocampus or in mGluR2/3 receptors. These results from a clinically-relevant animal model of addiction suggest that mGluR5 receptor modulation may be a potential treatment of cognitive dysfunction in meth addiction.

Television as a Hybrid Repertoire of Memory. New Dynamic Practices of Cultural Memory in the Multi-Platform Era

Directory of Open Access Journals (Sweden)

Berber Hagedoorn

2013-06-01

Full Text Available In this article, television is reconsidered as a hybrid ‘repertoire’ ofmemory. It is demonstrated how new dynamic production and scheduling practicesin connection with highly accessible and participatory forms of user engagementoffer opportunities for television users to engage with the past, and how suchpractices affect television as a practice of memory. The media platform HollandDoc is discussed as a principal casestudy. By adopting and expanding Aleida Assmann’s model of the dynamics ofcultural memory between remembering and forgetting, a new model to studytelevision as cultural memory is proposed which represents the medium’shybridity in the multi-platform era.

Semantic Memory and Verbal Working Memory Correlates of N400 to Subordinate Homographs

Science.gov (United States)

Salisbury, Dean F.

2004-01-01

N400 is an event-related brain potential that indexes operations in semantic memory conceptual space, whether elicited by language or some other representation (e.g., drawings). Language models typically propose three stages: lexical access or orthographic- and phonological-level analysis; lexical selection or word-level meaning and associate…

A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

Science.gov (United States)

Chien, Wei-Chih; Chen, Yi-Chou; Lee, Feng-Ming; Lin, Yu-Yu; Lai, Erh-Kun; Yao, Yeong-Der; Gong, Jeng; Horng, Sheng-Fu; Yeh, Chiao-Wen; Tsai, Shih-Chang; Lee, Ching-Hsiung; Huang, Yu-Kai; Chen, Chun-Fu; Kao, Hsiao-Feng; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Lu, Chih-Yuan

2011-04-01

The behavior of WOX resistive random access memory (ReRAM) is a strong function of the top electrode material, which controls the conduction mechanism and the forming process. When using a top electrode with low work function, the current conduction is limited by space charges. On the other hand, the mechanism becomes thermionic emission for devices with a high work function top electrode. These (thermionic) devices are also found to have higher initial resistance, reduced forming current, and larger resistance window. Based on these insights and considering the compatibility to complementary metal-oxide-semiconductor (CMOS) process, we proposed to use Ni as the top electrode for high performance WOX ReRAM devices. The new Ni/WOX/W device can be switched at a low current density less than 8×105 A/cm2, with RESET/SET resistance ratio greater than 100, and extremely good data retention of more than 300 years at 85 °C.

Insect olfactory coding and memory at multiple timescales.

Science.gov (United States)

Gupta, Nitin; Stopfer, Mark

2011-10-01

Insects can learn, allowing them great flexibility for locating seasonal food sources and avoiding wily predators. Because insects are relatively simple and accessible to manipulation, they provide good experimental preparations for exploring mechanisms underlying sensory coding and memory. Here we review how the intertwining of memory with computation enables the coding, decoding, and storage of sensory experience at various stages of the insect olfactory system. Individual parts of this system are capable of multiplexing memories at different timescales, and conversely, memory on a given timescale can be distributed across different parts of the circuit. Our sampling of the olfactory system emphasizes the diversity of memories, and the importance of understanding these memories in the context of computations performed by different parts of a sensory system. Published by Elsevier Ltd.

Silent store detection and recording in memory storage

Energy Technology Data Exchange (ETDEWEB)

Bose, Pradip; Cher, Chen-Yong; Nair, Ravi

2017-03-14

An aspect includes receiving a write request that includes a memory address and write data. Stored data is read from a memory location at the memory address. Based on determining that the memory location was not previously modified, the stored data is compared to the write data. Based on the stored data matching the write data, the write request is completed without writing the write data to the memory and a corresponding silent store bit, in a silent store bitmap is set. Based on the stored data not matching the write data, the write data is written to the memory location, the silent store bit is reset and a corresponding modified bit is set. At least one of an application and an operating system is provided access to the silent store bitmap.

Silent store detection and recording in memory storage

Energy Technology Data Exchange (ETDEWEB)

Bose, Pradip; Cher, Chen-Yong; Nair, Ravi

2017-03-07

An aspect includes receiving a write request that includes a memory address and write data. Stored data is read from a memory location at the memory address. Based on determining that the memory location was not previously modified, the stored data is compared to the write data. Based on the stored data matching the write data, the write request is completed without writing the write data to the memory and a corresponding silent store bit, in a silent store bitmap is set. Based on the stored data not matching the write data, the write data is written to the memory location, the silent store bit is reset and a corresponding modified bit is set. At least one of an application and an operating system is provided access to the silent store bitmap.

SODR Memory Control Buffer Control ASIC

Science.gov (United States)

Hodson, Robert F.

1994-01-01

The Spacecraft Optical Disk Recorder (SODR) is a state of the art mass storage system for future NASA missions requiring high transmission rates and a large capacity storage system. This report covers the design and development of an SODR memory buffer control applications specific integrated circuit (ASIC). The memory buffer control ASIC has two primary functions: (1) buffering data to prevent loss of data during disk access times, (2) converting data formats from a high performance parallel interface format to a small computer systems interface format. Ten 144 p in, 50 MHz CMOS ASIC's were designed, fabricated and tested to implement the memory buffer control function.

A memory module for experimental data handling

Science.gov (United States)

De Blois, J.

1985-02-01

A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory chian internal connector. The memory unit will be used in Mössbauer experiments and in thermal neutron scattering experiments.

Difference in Subjective Accessibility of On Demand Recall of Visual, Taste, and Olfactory Memories

OpenAIRE

Zach, Petr; Zimmelová, Petra; Mrzílková, Jana; Kutová, Martina

2018-01-01

We present here significant difference in the evocation capability between sensory memories (visual, taste, and olfactory) throughout certain categories of the population. As object for this memory recall we selected French fries that are simple and generally known. From daily life we may intuitively feel that there is much better recall of the visual and auditory memory compared to the taste and olfactory ones. Our results in young (age 12–21 years) mostly females and some males show low cap...

The influence of aging on attentional refreshing and articulatory rehearsal during working memory on later episodic memory performance.

Science.gov (United States)

Loaiza, Vanessa M; McCabe, David P

2013-01-01

We investigated age-related changes in two proposed mechanisms of maintenance in working memory, articulatory rehearsal, and attentional refreshing, by examining the consequences of manipulating the opportunity for each on delayed recall. Both experiments utilized modified operation span tasks to vary the opportunity for articulatory rehearsal (Experiment 1) and attentional refreshing opportunities (Experiment 2). In both experiments, episodic memory was tested for items that had been initially studied during the respective operation span task. Older adults' episodic memory benefited less from opportunities for refreshing than younger adults. In contrast, articulatory rehearsal opportunities did not influence episodic memory for either age group. The results suggest that attentional refreshing, and not articulatory rehearsal, is important during working memory in order to bind more accessible traces at later tests, which appears to be more deficient in older adults than younger adults.

Conversational assessment in memory clinic encounters: interactional profiling for differentiating dementia from functional memory disorders.

Science.gov (United States)

Jones, Danielle; Drew, Paul; Elsey, Christopher; Blackburn, Daniel; Wakefield, Sarah; Harkness, Kirsty; Reuber, Markus

2016-01-01

In the UK dementia is under-diagnosed, there is limited access to specialist memory clinics, and many of the patients referred to such clinics are ultimately found to have functional (non-progressive) memory disorders (FMD), rather than a neurodegenerative disorder. Government initiatives on 'timely diagnosis' aim to improve the rate and quality of diagnosis for those with dementia. This study seeks to improve the screening and diagnostic process by analysing communication between clinicians and patients during initial specialist clinic visits. Establishing differential conversational profiles could help the timely differential diagnosis of memory complaints. This study is based on video- and audio recordings of 25 initial consultations between neurologists and patients referred to a UK memory clinic. Conversation analysis was used to explore recurrent communicative practices associated with each diagnostic group. Two discrete conversational profiles began to emerge, to help differentiate between patients with dementia and functional memory complaints, based on (1) whether the patient is able to answer questions about personal information; (2) whether they can display working memory in interaction; (3) whether they are able to respond to compound questions; (4) the time taken to respond to questions; and (5) the level of detail they offer when providing an account of their memory failure experiences. The distinctive conversational profiles observed in patients with functional memory complaints on the one hand and neurodegenerative memory conditions on the other suggest that conversational profiling can support the differential diagnosis of functional and neurodegenerative memory disorders.

Holographic View of the Brain Memory Mechanism Based on Evanescent Superluminal Photons

Directory of Open Access Journals (Sweden)

Takaaki Musha

2012-08-01

Full Text Available D. Pollen and M. Trachtenberg proposed the holographic brain theory to help explain the existence of photographic memories in some people. They suggested that such individuals had more vivid memories because they somehow could access a very large region of their memory holograms. Hameroff suggested in his paper that cylindrical neuronal microtubule cavities, or centrioles, function as waveguides for the evanescent photons for quantum signal processing. The supposition is that microtubular structures of the brain function as a coherent fiber bundle set used to store holographic images, as would a fiber-optic holographic system. In this paper, the author proposes that superluminal photons propagating inside the microtubules via evanescent waves could provide the access needed to record or retrieve a quantum coherent entangled holographic memory.

Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

CERN Document Server

Cerjan, C J

2000-01-01

The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

Psychological Processes Underlying Cultivation Effects: Further Tests of Construct Accessibility.

Science.gov (United States)

Shrum, L. J.

1996-01-01

Describes a study that tested whether the accessibility of information in memory mediates the cultivation effect (the effect of television viewing on social perceptions), consistent with the availability heuristic. Shows that heavy viewers gave higher frequency estimates (cultivation effect) and responded faster (accessibility effect) than did…

Trinary Associative Memory Would Recognize Machine Parts

Science.gov (United States)

Liu, Hua-Kuang; Awwal, Abdul Ahad S.; Karim, Mohammad A.

1991-01-01

Trinary associative memory combines merits and overcomes major deficiencies of unipolar and bipolar logics by combining them in three-valued logic that reverts to unipolar or bipolar binary selectively, as needed to perform specific tasks. Advantage of associative memory: one obtains access to all parts of it simultaneously on basis of content, rather than address, of data. Consequently, used to exploit fully parallelism and speed of optical computing.

Texture and flavour memory in foods : an incidental learning experiment

NARCIS (Netherlands)

Mojet, J.; Koster, E.P.

2002-01-01

Memory plays a major role in the formation of food expectations. How accessible and how accurate is incidentally acquired and stored product information? In the present experiment the memory for variations in texture (and flavour) was tested with a new and ecologically valid method. Subjects (N=69:

Texture and flavour memory in foods : an incidental learning experiment

NARCIS (Netherlands)

Mojet, J.; Köster, E.P.

2002-01-01

Memory plays a major role in the formation of food expectations. How accessible and how accurate is incidentally acquired and stored product information? In the present experiment the memory for variations in texture (and flavour) was tested with a new and ecologically valid method. Subjects (N =

Memory-assisted measurement-device-independent quantum key distribution

Science.gov (United States)

Panayi, Christiana; Razavi, Mohsen; Ma, Xiongfeng; Lütkenhaus, Norbert

2014-04-01

A protocol with the potential of beating the existing distance records for conventional quantum key distribution (QKD) systems is proposed. It borrows ideas from quantum repeaters by using memories in the middle of the link, and that of measurement-device-independent QKD, which only requires optical source equipment at the user's end. For certain memories with short access times, our scheme allows a higher repetition rate than that of quantum repeaters with single-mode memories, thereby requiring lower coherence times. By accounting for various sources of nonideality, such as memory decoherence, dark counts, misalignment errors, and background noise, as well as timing issues with memories, we develop a mathematical framework within which we can compare QKD systems with and without memories. In particular, we show that with the state-of-the-art technology for quantum memories, it is potentially possible to devise memory-assisted QKD systems that, at certain distances of practical interest, outperform current QKD implementations.

Memory-assisted measurement-device-independent quantum key distribution

International Nuclear Information System (INIS)

Panayi, Christiana; Razavi, Mohsen; Ma, Xiongfeng; Lütkenhaus, Norbert

2014-01-01

A protocol with the potential of beating the existing distance records for conventional quantum key distribution (QKD) systems is proposed. It borrows ideas from quantum repeaters by using memories in the middle of the link, and that of measurement-device-independent QKD, which only requires optical source equipment at the user's end. For certain memories with short access times, our scheme allows a higher repetition rate than that of quantum repeaters with single-mode memories, thereby requiring lower coherence times. By accounting for various sources of nonideality, such as memory decoherence, dark counts, misalignment errors, and background noise, as well as timing issues with memories, we develop a mathematical framework within which we can compare QKD systems with and without memories. In particular, we show that with the state-of-the-art technology for quantum memories, it is potentially possible to devise memory-assisted QKD systems that, at certain distances of practical interest, outperform current QKD implementations. (paper)

Architectural design and simulation of a virtual memory

Science.gov (United States)

Kwok, G.; Chu, Y.

1971-01-01

Virtual memory is an imaginary main memory with a very large capacity which the programmer has at his disposal. It greatly contributes to the solution of the dynamic storage allocation problem. The architectural design of a virtual memory is presented which implements by hardware the idea of queuing and scheduling the page requests to a paging drum in such a way that the access of the paging drum is increased many times. With the design, an increase of up to 16 times in page transfer rate is achievable when the virtual memory is heavily loaded. This in turn makes feasible a great increase in the system throughput.

A Scalable Unsegmented Multiport Memory for FPGA-Based Systems

Directory of Open Access Journals (Sweden)

Kevin R. Townsend

2015-01-01

Full Text Available On-chip multiport memory cores are crucial primitives for many modern high-performance reconfigurable architectures and multicore systems. Previous approaches for scaling memory cores come at the cost of operating frequency, communication overhead, and logic resources without increasing the storage capacity of the memory. In this paper, we present two approaches for designing multiport memory cores that are suitable for reconfigurable accelerators with substantial on-chip memory or complex communication. Our design approaches tackle these challenges by banking RAM blocks and utilizing interconnect networks which allows scaling without sacrificing logic resources. With banking, memory congestion is unavoidable and we evaluate our multiport memory cores under different memory access patterns to gain insights about different design trade-offs. We demonstrate our implementation with up to 256 memory ports using a Xilinx Virtex-7 FPGA. Our experimental results report high throughput memories with resource usage that scales with the number of ports.

An Account of Performance in Accessing Information Stored in Long-Term Memory. A Fixed-Links Model Approach

Science.gov (United States)

Altmeyer, Michael; Schweizer, Karl; Reiss, Siegbert; Ren, Xuezhu; Schreiner, Michael

2013-01-01

Performance in working memory and short-term memory tasks was employed for predicting performance in a long-term memory task in order to find out about the underlying processes. The types of memory were represented by versions of the Posner Task, the Backward Counting Task and the Sternberg Task serving as measures of long-term memory, working…

Conditional load and store in a shared memory

Science.gov (United States)

Blumrich, Matthias A; Ohmacht, Martin

2015-02-03

A method, system and computer program product for implementing load-reserve and store-conditional instructions in a multi-processor computing system. The computing system includes a multitude of processor units and a shared memory cache, and each of the processor units has access to the memory cache. In one embodiment, the method comprises providing the memory cache with a series of reservation registers, and storing in these registers addresses reserved in the memory cache for the processor units as a result of issuing load-reserve requests. In this embodiment, when one of the processor units makes a request to store data in the memory cache using a store-conditional request, the reservation registers are checked to determine if an address in the memory cache is reserved for that processor unit. If an address in the memory cache is reserved for that processor, the data are stored at this address.

A Collective Study on Modeling and Simulation of Resistive Random Access Memory

Science.gov (United States)

Panda, Debashis; Sahu, Paritosh Piyush; Tseng, Tseung Yuen

2018-01-01

In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across devices. This review provides detailed information regarding the various physical methodologies considered for developing models for RRAM devices. It covers all the important models reported till now and elucidates their features and limitations. Various additional effects and anomalies arising from memristive system have been addressed, and the solutions provided by the models to these problems have been shown as well. All the fundamental concepts of RRAM model development such as device operation, switching dynamics, and current-voltage relationships are covered in detail in this work. Popular models proposed by Chua, HP Labs, Yakopcic, TEAM, Stanford/ASU, Ielmini, Berco-Tseng, and many others have been compared and analyzed extensively on various parameters. The working and implementations of the window functions like Joglekar, Biolek, Prodromakis, etc. has been presented and compared as well. New well-defined modeling concepts have been discussed which increase the applicability and accuracy of the models. The use of these concepts brings forth several improvements in the existing models, which have been enumerated in this work. Following the template presented, highly accurate models would be developed which will vastly help future model developers and the modeling community.

Autobiographic memory: phenomenological aspects, personal semantic knowledge, generic events and characters (one case of pure retrograde memory recovery).

Science.gov (United States)

Thomas Antérion, C; Mazzola, L; Laurent, B

2008-06-01

Tulving et al. [Brain Cogn 8 (1988) 3-20] proposed an operational distinction concerning memory between a semantic component consisting of general information about the individual's past and an episodic component, containing memories of specific events that can be situated in space and time. After a mild head trauma and in the context of professional troubles, patient FF displayed a pure retrograde amnesia concerning both his biographical identity and semantic memories. The patient could no longer access his memories. However, these did not seem completely lost since his answers to tests concerning historical events were better than random, his answers to a television quiz were automatic, he showed temporal transfer phenomena (ecmnesia) and since he retrieved the entirety of his memories within nine months. The patient FF illustrates the loss of retrograde autobiographic memory and the recovery of episodic memories, which requires three elements: a sense of subjective time, an autonoetic awareness (the ability to be aware of subjective time) and a "self" that can travel in subjective time.

Towards scalable parellelism in Monte Carlo particle transport codes using remote memory access

Energy Technology Data Exchange (ETDEWEB)

Romano, Paul K [Los Alamos National Laboratory; Brown, Forrest B [Los Alamos National Laboratory; Forget, Benoit [MIT

2010-01-01

One forthcoming challenge in the area of high-performance computing is having the ability to run large-scale problems while coping with less memory per compute node. In this work, they investigate a novel data decomposition method that would allow Monte Carlo transport calculations to be performed on systems with limited memory per compute node. In this method, each compute node remotely retrieves a small set of geometry and cross-section data as needed and remotely accumulates local tallies when crossing the boundary of the local spatial domain. initial results demonstrate that while the method does allow large problems to be run in a memory-limited environment, achieving scalability may be difficult due to inefficiencies in the current implementation of RMA operations.

Towards scalable parallelism in Monte Carlo particle transport codes using remote memory access

International Nuclear Information System (INIS)

Romano, Paul K.; Forget, Benoit; Brown, Forrest

2010-01-01

One forthcoming challenge in the area of high-performance computing is having the ability to run large-scale problems while coping with less memory per compute node. In this work, we investigate a novel data decomposition method that would allow Monte Carlo transport calculations to be performed on systems with limited memory per compute node. In this method, each compute node remotely retrieves a small set of geometry and cross-section data as needed and remotely accumulates local tallies when crossing the boundary of the local spatial domain. Initial results demonstrate that while the method does allow large problems to be run in a memory-limited environment, achieving scalability may be difficult due to inefficiencies in the current implementation of RMA operations. (author)

Fencing network direct memory access data transfers in a parallel active messaging interface of a parallel computer

Science.gov (United States)

Blocksome, Michael A.; Mamidala, Amith R.

2015-07-07

Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to a deterministic data communications network through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and the deterministic data communications network; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

External-Memory Algorithms and Data Structures

DEFF Research Database (Denmark)

Arge, Lars; Zeh, Norbert

2010-01-01

The data sets involved in many modern applications are often too massive to fit in main memory of even the most powerful computers and must therefore reside on disk. Thus communication between internal and external memory, and not actual computation time, becomes the bottleneck in the computation....... This is due to the huge difference in access time of fast internal memory and slower external memory such as disks. The goal of theoretical work in the area of external memory algorithms (also called I/O algorithms or out-of-core algorithms) has been to develop algorithms that minimize the Input...... in parallel and the use of parallel disks has received a lot of theoretical attention. See below for recent surveys of theoretical results in the area of I/O-efficient algorithms. TPIE is designed to bridge the gap between the theory and practice of parallel I/O systems. It is intended to demonstrate all...

All ITO-based transparent resistive switching random access memory using oxygen doping method

International Nuclear Information System (INIS)

Kim, Hee-Dong; Yun, Min Ju; Kim, Sungho

2015-01-01

Recently, transparent memory would be useful in invisible electronics. In this work, for the first time we present a feasibility of stable unipolar resistive switching (RS) characteristics with reset current of sub-micron ampere for the fully transparent ITO/oxygen-doped ITO/ITO memory capacitors, i.e., all ITO structures, produced by sputtering method, which shows a high optical transmittance of approximately 80% in the visible region as well as near ultra-violet region. In addition, in a RS test to evaluate a reliability for the proposed memory devices, we observed a stable endurance of >100 cycles and a retention time of >10 4  s at 85 °C, with a current ratio of ∼10 2 to ∼10 3 . This result indicates that this transparent memory by engineering the amount of oxygen ions within the ITO films could be a milestone for future see-through electronic devices. - Highlights: • The resistive switching characteristics of the transparent ITO/O-doped ITO/ITO RRAM cells have investigated. • All ITO-based RRAM cell is achieved using oxygen doping method. • Good endurance and long retention time were observed.

The dynamics of sensory buffers: geometric, spatial, and experience-dependent shaping of iconic memory.

Science.gov (United States)

Graziano, Martin; Sigman, Mariano

2008-05-23

When a stimulus is presented, its sensory trace decays rapidly, lasting for approximately 1000 ms. This brief and labile memory, referred as iconic memory, serves as a buffer before information is transferred to working memory and executive control. Here we explored the effect of different factors--geometric, spatial, and experience--with respect to the access and the maintenance of information in iconic memory and the progressive distortion of this memory. We studied performance in a partial report paradigm, a design wherein recall of only part of a stimulus array is required. Subjects had to report the identity of a letter in a location that was cued in a variable delay after the stimulus onset. Performance decayed exponentially with time, and we studied the different parameters (time constant, zero-delay value, and decay amplitude) as a function of the different factors. We observed that experience (determined by letter frequency) affected the access to iconic memory but not the temporal decay constant. On the contrary, spatial position affected the temporal course of delay. The entropy of the error distribution increased with time reflecting a progressive morphological distortion of the iconic buffer. We discuss our results on the context of a model of information access to executive control and how it is affected by learning and attention.

From sensory to long-term memory: evidence from auditory memory reactivation studies.

Science.gov (United States)

Winkler, István; Cowan, Nelson

2005-01-01

Everyday experience tells us that some types of auditory sensory information are retained for long periods of time. For example, we are able to recognize friends by their voice alone or identify the source of familiar noises even years after we last heard the sounds. It is thus somewhat surprising that the results of most studies of auditory sensory memory show that acoustic details, such as the pitch of a tone, fade from memory in ca. 10-15 s. One should, therefore, ask (1) what types of acoustic information can be retained for a longer term, (2) what circumstances allow or help the formation of durable memory records for acoustic details, and (3) how such memory records can be accessed. The present review discusses the results of experiments that used a model of auditory recognition, the auditory memory reactivation paradigm. Results obtained with this paradigm suggest that the brain stores features of individual sounds embedded within representations of acoustic regularities that have been detected for the sound patterns and sequences in which the sounds appeared. Thus, sounds closely linked with their auditory context are more likely to be remembered. The representations of acoustic regularities are automatically activated by matching sounds, enabling object recognition.

Rhesus monkeys see who they hear: spontaneous cross-modal memory for familiar conspecifics.

Directory of Open Access Journals (Sweden)

Ikuma Adachi

Full Text Available Rhesus monkeys gather much of their knowledge of the social world through visual input and may preferentially represent this knowledge in the visual modality. Recognition of familiar faces is clearly advantageous, and the flexibility and utility of primate social memory would be greatly enhanced if visual memories could be accessed cross-modally either by visual or auditory stimulation. Such cross-modal access to visual memory would facilitate flexible retrieval of the knowledge necessary for adaptive social behavior. We tested whether rhesus monkeys have cross-modal access to visual memory for familiar conspecifics using a delayed matching-to-sample procedure. Monkeys learned visual matching of video clips of familiar individuals to photographs of those individuals, and generalized performance to novel videos. In crossmodal probe trials, coo-calls were played during the memory interval. The calls were either from the monkey just seen in the sample video clip or from a different familiar monkey. Even though the monkeys were trained exclusively in visual matching, the calls influenced choice by causing an increase in the proportion of errors to the picture of the monkey whose voice was heard on incongruent trials. This result demonstrates spontaneous cross-modal recognition. It also shows that viewing videos of familiar monkeys activates naturally formed memories of real monkeys, validating the use of video stimuli in studies of social cognition in monkeys.

Sight Word Reading in Prereaders: Use of Logographic vs. Alphabetic Access Routes.

Science.gov (United States)

Scott, Judith Anne; Ehri, Linnea C.

1990-01-01

Investigates whether prereaders who knew all their letters are better at forming logographic access routes than letter-sound access routes into memory from words read by sight. Concludes that prereaders become capable of forming letter-sound access routes when they learn letters well enough to take advantage of the phonetic cues the letters…

Electrophysiological correlates of exemplar-specific processes in implicit and explicit memory.

Science.gov (United States)

Küper, Kristina; Groh-Bordin, Christian; Zimmer, Hubert D; Ecker, Ullrich K H

2012-03-01

The present ERP study investigated the retrieval of task-irrelevant exemplar-specific information under implicit and explicit memory conditions. Subjects completed either an indirect memory test (a natural/artificial judgment) or a direct recognition memory test. Both test groups were presented with new items, identical repetitions, and perceptually different but conceptually similar exemplars of previously seen study objects. Implicit and explicit memory retrieval elicited clearly dissociable ERP components that were differentially affected by exemplar changes from study to test. In the indirect test, identical repetitions, but not different exemplars, elicited a significant ERP repetition priming effect. In contrast, both types of repeated objects gave rise to a reliable old/new effect in the direct test. The results corroborate that implicit and explicit memory fall back on distinct cognitive representation and, more importantly, indicate that these representations differ in the type of stimulus information stored. Implicit retrieval entailed obligatory access to exemplar-specific perceptual information, despite its being task irrelevant. In contrast, explicit retrieval proved to be more flexible with conceptual and perceptual information accessed according to task demands.

In-Memory Business Intelligence: Concepts and Performance

Science.gov (United States)

Rantung, V. P.; Kembuan, O.; Rompas, P. T. D.; Mewengkang, A.; Liando, O. E. S.; Sumayku, J.

2018-02-01

This research aims to discuss in-memory Business Intelligent (BI) and to model the business analysis questions to know the performance of the in-memory BI. By using, the Qlickview application found BI dashboards that easily accessed and modified. The dashboards are developed together using an agile development approach such as pre-study, planning, iterative execution, implementation, and evaluation. At the end, this research helping analyzer in choosing a right implementation for BI solution.

Application of phase-change materials in memory taxonomy

OpenAIRE

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other...

A memory module for experimental data handling

International Nuclear Information System (INIS)

Blois, J. de

1985-01-01

A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory by an internal connector. The memory unit will be used in Moessbauer experiments and in thermal neutron scattering experiments. (orig.)

Object selection costs in visual working memory: A diffusion model analysis of the focus of attention.

Science.gov (United States)

Sewell, David K; Lilburn, Simon D; Smith, Philip L

2016-11-01

A central question in working memory research concerns the degree to which information in working memory is accessible to other cognitive processes (e.g., decision-making). Theories assuming that the focus of attention can only store a single object at a time require the focus to orient to a target representation before further processing can occur. The need to orient the focus of attention implies that single-object accounts typically predict response time costs associated with object selection even when working memory is not full (i.e., memory load is less than 4 items). For other theories that assume storage of multiple items in the focus of attention, predictions depend on specific assumptions about the way resources are allocated among items held in the focus, and how this affects the time course of retrieval of items from the focus. These broad theoretical accounts have been difficult to distinguish because conventional analyses fail to separate components of empirical response times related to decision-making from components related to selection and retrieval processes associated with accessing information in working memory. To better distinguish these response time components from one another, we analyze data from a probed visual working memory task using extensions of the diffusion decision model. Analysis of model parameters revealed that increases in memory load resulted in (a) reductions in the quality of the underlying stimulus representations in a manner consistent with a sample size model of visual working memory capacity and (b) systematic increases in the time needed to selectively access a probed representation in memory. The results are consistent with single-object theories of the focus of attention. The results are also consistent with a subset of theories that assume a multiobject focus of attention in which resource allocation diminishes both the quality and accessibility of the underlying representations. (PsycINFO Database Record (c) 2016

Memory Loss and Retrieval

Science.gov (United States)

Reid, Ian

2016-01-01

Underlying the generally oblivious attitude of teachers and learners towards the past is insufficient respect for the role of memory in giving meaning to experience and access to knowledge. We shape our identity by making sense of our past and its relationship to present and future selves, a process that should be intensively cultivated when we…

Working memory biasing of visual perception without awareness.

Science.gov (United States)

Pan, Yi; Lin, Bingyuan; Zhao, Yajun; Soto, David

2014-10-01

Previous research has demonstrated that the contents of visual working memory can bias visual processing in favor of matching stimuli in the scene. However, the extent to which such top-down, memory-driven biasing of visual perception is contingent on conscious awareness remains unknown. Here we showed that conscious awareness of critical visual cues is dispensable for working memory to bias perceptual selection mechanisms. Using the procedure of continuous flash suppression, we demonstrated that "unseen" visual stimuli during interocular suppression can gain preferential access to awareness if they match the contents of visual working memory. Strikingly, the very same effect occurred even when the visual cue to be held in memory was rendered nonconscious by masking. Control experiments ruled out the alternative accounts of repetition priming and different detection criteria. We conclude that working memory biases of visual perception can operate in the absence of conscious awareness.

Alpha radiation detection using silicon memory chips - preliminary studies

International Nuclear Information System (INIS)

Pace, R.; Paix, D.; Haskard, M.

1993-01-01

Alpha radiation dosage is an important occupational health factor in the mining of uranium and mineral sands. Alpha radiation induced errors in the data of silicon based memory chips provide the foundation for a new type of sensor, with the potential for affordable and prompt measurement of personal alpha doses. With particular reference to Dynamic Random Access Memories (DRAM) this paper introduces the operating principle of a memory based radiation sensor, which is the error mechanism in silicon integrated circuits. 14 refs., 3 figs

What happens during a Join? - Dissecting CPU and Memory Optimization Effects

OpenAIRE

Manegold, Stefan; Boncz, Peter; Kersten, Martin

2000-01-01

textabstractPerformance of modern hardware increasingly depends on proper utilization of both the memory cache hierarchy and parallel execution possibilities in todays super-scalar CPUs. Recent database research has demonstrated that database system performance severely suffers from poor utilization of these resources. In previous work, we presented join algorithms that strongly accelerate large equi-join by tuning the memory access pattern to match the characteristics of the memory cache sub...

Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

Energy Technology Data Exchange (ETDEWEB)

Dawson, J. A., E-mail: jad95@cam.ac.uk; Guo, Y.; Robertson, J. [Department of Engineering, University of Cambridge, Cambridge CB2 1PZ (United Kingdom)

2015-09-21

Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.

Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

International Nuclear Information System (INIS)

Dawson, J. A.; Guo, Y.; Robertson, J.

2015-01-01

Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour

Memory Dynamics and Decision Making in Younger and Older Adults

Science.gov (United States)

Lechuga, M. Teresa; Gomez-Ariza, Carlos J.; Iglesias-Parro, Sergio; Pelegrina, Santiago

2012-01-01

The main aim of this research was to study whether memory dynamics influence older people's choices to the same extent as younger's ones. To do so, we adapted the retrieval-practice paradigm to produce variations in memory accessibility of information on which decisions were made later. Based on previous results, we expected to observe…

Beyond accessibility? Toward an on-line and memory-based model of framing effects

OpenAIRE

Matthes, Jörg

2007-01-01

This theoretical article investigates the effects of media frames on individuals' judgments. In contrast to previous theorizing, we suggest that framing scholars should embrace both, on-line and memory-based judgment formation processes. Based on that premise, we propose a model that distinguishes between two phases of framing effects. Along the first phase, the media's framing contributes to the formation of an on-line or a memory-based judgment. The second phase describes six hypothetical r...

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

Science.gov (United States)

Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-04-09

As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 10 6 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

Lost for words or loss of memories? Autobiographical memory in semantic dementia.

Science.gov (United States)

Moss, H E; Kopelman, M D; Cappelletti, M; Davies, P de Mornay; Jaldow, E

2003-12-01

Recent reports have suggested that patients with semantic dementia show a loss of early (remote) auto-biographical memories with pronounced sparing of recent memories (Graham & Hodges, 1997; Snowden, Griffiths, & Neary, 1996), i.e., a 'reversed' temporal gradient or 'Ribot effect'. At first sight, these findings suggest that the deficits in 'semantic' dementia go beyond the semantic domain, involving aspects of autobiographical (episodic) memory. It has also been proposed that there is a 'step-like' function with personal memories preserved for 18 months to 2 years in the immediate past. This view is consistent with the theory that the hippocampal complex/medial temporal lobe (relatively intact in semantic dementia) plays a time-limited role in the acquisition and storage of memories, while the temporal neocortex (damaged in semantic dementia) is required for long-term storage and retrieval. In this study we ask whether (a) previous tests have underestimated the integrity of remote memory in semantic dementia as a result of not allowing for these patients' comprehension and language production difficulties, and (b) whether a recency effect, if obtained, is genuinely step-like or more graded. We used a cued autobiographical memory interview with semantic dementia patient, IH, to examine the effect of providing increasingly specific lexical cues to probe salient events throughout his lifespan. Results demonstrated that the provision of specific cues enabled IH to access and express memories from his childhood and early adulthood as well as from more recent times. There was a gentle recency effect only for intermediate levels of cueing, indicating that recent memories were easier to retrieve and/or express in the absence of specific cues, but this effect was graded, with no evidence of a step-like cut-off at 18 months or 2 years before testing. In brief, our findings are consistent with the view that the deficits in semantic dementia are predominantly or exclusively

Retrieval of memories with the help of music in Alzheimer's disease.

Science.gov (United States)

Chevreau, Priscilia; Nizard, Ingrid; Allain, Philippe

2017-09-01

This study focuses on music as a mediator facilitating access to autobiographical memory in Alzheimer's disease (AD). Studies on this topic are rare, but available data have shown a beneficial effect of music on autobiographical performance in AD patients. Based on the "index word" method, we developed the "index music" method for the evaluation of autobiographical memory. The subjects had to tell a memory of their choice from the words or music presented to them. The task was proposed to 54 patients with diagnosis of AD according to DSM IV and NINCDS-ADRDA criteria. All of them had a significant cognitive decline on the MMSE (mean score: 14.5). Patients were matched by age, sex and level of education with 48 control subjects without cognitive impairment (mean score on the MMSE: 28). Results showed that autobiographical memory quantity scores of AD patients were significantly lower than those of healthy control in both methods. However, autobiographical memory quality scores of AD patients increased with "index music" whereas autobiographical memory quality scores of healthy control decreased. Also, the autobiographical performance of patients with AD in condition index music was not correlated with cognitive performance in contrast to the autobiographical performances in index word. These results confirm that music improves access to personal memories in patients with AD. Personal memories could be preserved in patients with AD and music could constitute an interesting way to stimulate recollection.

Episodic-like memory in the rat.

Science.gov (United States)

Babb, Stephanie J; Crystal, Jonathon D

2006-07-11

A fundamental question in comparative cognition is whether animals remember unique, personal past experiences. It has long been argued that memories for specific events (referred to as episodic memory) are unique to humans. Recently, considerable evidence has accumulated to show that food-storing birds possess critical behavioral elements of episodic memory, referred to as episodic-like memory in acknowledgment of the fact that behavioral criteria do not assess subjective experiences. Here we show that rats have a detailed representation of remembered events and meet behavioral criteria for episodic-like memory. We provided rats with access to locations baited with distinctive (e.g., grape and raspberry) or nondistinctive (regular chow) flavors. Locations with a distinctive flavor replenished after a long but not a short delay, and locations with the nondistinctive flavor never replenished. One distinctive flavor was devalued after encoding its location by prefeeding that flavor (satiation) or by pairing it with lithium chloride (acquired taste aversion), while the other distinctive flavor was not devalued. The rats selectively decreased revisits to the devalued distinctive flavor but not to the nondevalued distinctive flavor. The present studies demonstrate that rats selectively encode the content of episodic-like memories.

Resonator memories and optical novelty filters

Science.gov (United States)

Anderson, Dana Z.; Erle, Marie C.

Optical resonators having holographic elements are potential candidates for storing information that can be accessed through content addressable or associative recall. Closely related to the resonator memory is the optical novelty filter, which can detect the differences between a test object and a set of reference objects. We discuss implementations of these devices using continuous optical media such as photorefractive materials. The discussion is framed in the context of neural network models. There are both formal and qualitative similarities between the resonator memory and optical novelty filter and network models. Mode competition arises in the theory of the resonator memory, much as it does in some network models. We show that the role of the phenomena of "daydreaming" in the real-time programmable optical resonator is very much akin to the role of "unlearning" in neural network memories. The theory of programming the real-time memory for a single mode is given in detail. This leads to a discussion of the optical novelty filter. Experimental results for the resonator memory, the real-time programmable memory, and the optical tracking novelty filter are reviewed. We also point to several issues that need to be addressed in order to implement more formal models of neural networks.

Non-volatile memory based on the ferroelectric photovoltaic effect

Science.gov (United States)

Guo, Rui; You, Lu; Zhou, Yang; Shiuh Lim, Zhi; Zou, Xi; Chen, Lang; Ramesh, R.; Wang, Junling

2013-01-01

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. PMID:23756366

`Unlearning' has a stabilizing effect in collective memories

Science.gov (United States)

Hopfield, J. J.; Feinstein, D. I.; Palmer, R. G.

1983-07-01

Crick and Mitchison1 have presented a hypothesis for the functional role of dream sleep involving an `unlearning' process. We have independently carried out mathematical and computer modelling of learning and `unlearning' in a collective neural network of 30-1,000 neurones. The model network has a content-addressable memory or `associative memory' which allows it to learn and store many memories. A particular memory can be evoked in its entirety when the network is stimulated by any adequate-sized subpart of the information of that memory2. But different memories of the same size are not equally easy to recall. Also, when memories are learned, spurious memories are also created and can also be evoked. Applying an `unlearning' process, similar to the learning processes but with a reversed sign and starting from a noise input, enhances the performance of the network in accessing real memories and in minimizing spurious ones. Although our model was not motivated by higher nervous function, our system displays behaviours which are strikingly parallel to those needed for the hypothesized role of `unlearning' in rapid eye movement (REM) sleep.

A short cut to the past: Cueing via concrete objects improves autobiographical memory retrieval in Alzheimer's disease patients.

Science.gov (United States)

Kirk, Marie; Berntsen, Dorthe

2018-02-01

Older adults diagnosed with Alzheimer's disease (AD) have difficulties accessing autobiographical memories. However, this deficit tends to spare memories dated to earlier parts of their lives, and may partially reflect retrieval deficits rather than complete memory loss. Introducing a novel paradigm, the present study examines whether autobiographical memory recall can be improved in AD by manipulating the sensory richness, concreteness and cultural dating of the memory cues. Specifically, we examine whether concrete everyday objects historically dated to the participants' youth (e.g., a skipping rope), relative to verbal cues (i.e., the verbal signifiers for the objects) facilitate access to autobiographical memories. The study includes 49 AD patients, and 50 healthy, older matched control participants, all tested on word versus object-cued recall. Both groups recalled significantly more memories, when cued by objects relative to words, but the advantage was significantly larger in the AD group. In both groups, memory descriptions were longer and significantly more episodic in nature in response to object-cued recall. Together these findings suggest that the multimodal nature of the object cues (i.e. vision, olfaction, audition, somatic sensation) along with specific cue characteristics, such as time reference, texture, shape, may constrain the retrieval search, potentially minimizing executive function demands, and hence strategic processing requirements, thus easing access to autobiographical memories in AD. Copyright © 2017 Elsevier Ltd. All rights reserved.

Using organisational memory in evaluations

Directory of Open Access Journals (Sweden)

Madri S. Jansen van Rensburg

2014-12-01

Full Text Available This article uses the case of a regional intermediary organisation to investigate organisational memory (OM and its contribution to knowledge management and activities in evaluations. Understanding of, and accessing OM is critical for participatory evaluations. The aim of the article is to reflect on the OM of a non-governmental organisation (NGO and what implicationsthe structural changes in OM over the organisation’s life cycle have for evaluators. It further aims to advocate an awareness of OM and explains how evaluators can access and utilise it more effectively. Evaluators need to have an understanding of OM, and to take more responsibility for disseminating results to enhance it. This case study reflects on a retrospective case example of a regional NGO. The report reflects the development and structure of the life cycle of the organisation. The data collection included in-depth interviews with staff members and other key stakeholders, engagement with beneficiary organisations and donors, and analyses of documents, electronic files and audio-visual material. Since OM survives after the demise of an organisation, and is accessible through directories, it is important for the evaluator to include historical information. Specific implications for evaluators include the ability to access OM through directories and networks of the organisation. As evaluators hold OM of all the organisations they have engaged with, they also have a responsibility to share knowledge. The key findings of this study illustrate the importance of accessing the memory and historical information of the organisation. Understanding OM enhances the in-depth comprehension of the activity, project or programme under investigation, and the collective knowledge generated as a result of it.

Adiabatic Quantum Optimization for Associative Memory Recall

Science.gov (United States)

Seddiqi, Hadayat; Humble, Travis

2014-12-01

Hopfield networks are a variant of associative memory that recall patterns stored in the couplings of an Ising model. Stored memories are conventionally accessed as fixed points in the network dynamics that correspond to energetic minima of the spin state. We show that memories stored in a Hopfield network may also be recalled by energy minimization using adiabatic quantum optimization (AQO). Numerical simulations of the underlying quantum dynamics allow us to quantify AQO recall accuracy with respect to the number of stored memories and noise in the input key. We investigate AQO performance with respect to how memories are stored in the Ising model according to different learning rules. Our results demonstrate that AQO recall accuracy varies strongly with learning rule, a behavior that is attributed to differences in energy landscapes. Consequently, learning rules offer a family of methods for programming adiabatic quantum optimization that we expect to be useful for characterizing AQO performance.

Adiabatic Quantum Optimization for Associative Memory Recall

Directory of Open Access Journals (Sweden)

Hadayat eSeddiqi

2014-12-01

Full Text Available Hopfield networks are a variant of associative memory that recall patterns stored in the couplings of an Ising model. Stored memories are conventionally accessed as fixed points in the network dynamics that correspond to energetic minima of the spin state. We show that memories stored in a Hopfield network may also be recalled by energy minimization using adiabatic quantum optimization (AQO. Numerical simulations of the underlying quantum dynamics allow us to quantify AQO recall accuracy with respect to the number of stored memories and noise in the input key. We investigate AQO performance with respect to how memories are stored in the Ising model according to different learning rules. Our results demonstrate that AQO recall accuracy varies strongly with learning rule, a behavior that is attributed to differences in energy landscapes. Consequently, learning rules offer a family of methods for programming adiabatic quantum optimization that we expect to be useful for characterizing AQO performance.

Elastic pointer directory organization for scalable shared memory multiprocessors

Institute of Scientific and Technical Information of China (English)

Yuhang Liu; Mingfa Zhu; Limin Xiao

2014-01-01

In the field of supercomputing, one key issue for scal-able shared-memory multiprocessors is the design of the directory which denotes the sharing state for a cache block. A good direc-tory design intends to achieve three key attributes: reasonable memory overhead, sharer position precision and implementation complexity. However, researchers often face the problem that gain-ing one attribute may result in losing another. The paper proposes an elastic pointer directory (EPD) structure based on the analysis of shared-memory applications, taking the fact that the number of sharers for each directory entry is typical y smal . Analysis re-sults show that for 4 096 nodes, the ratio of memory overhead to the ful-map directory is 2.7%. Theoretical analysis and cycle-accurate execution-driven simulations on a 16 and 64-node cache coherence non uniform memory access (CC-NUMA) multiproces-sor show that the corresponding pointer overflow probability is reduced significantly. The performance is observed to be better than that of a limited pointers directory and almost identical to the ful-map directory, except for the slight implementation complex-ity. Using the directory cache to explore directory access locality is also studied. The experimental result shows that this is a promis-ing approach to be used in the state-of-the-art high performance computing domain.

A Physicist Role in Innovation within IBM Research

Science.gov (United States)

Gallagher, William

2014-03-01

The broad and deep insight a physicist brings to the goings on in a large technology company lead to many varied and exciting opportunities. Examples in my own career include contributions to important understanding of new breakthroughs (understanding the basic anisotropy of high temperature superconductivity), bringing vital physics understanding to ambitious engineering projects (basic switching and noise margins in digital Josephson junction technology), and initiating and growing large applied projects based on fundamental physics breakthroughs (magnetoresistive random access memory - MRAM). Success at such undertakings within a large enterprise involves a number of factors. Always seeking out the best expert advice and the best collaborators in unfamiliar technical areas as new ideas develop is enormously helpful and not at all difficult within a large innovative organization. While being imaginative and optimistic, one must also remain brutally honest about the potential value of new endeavors, the hurdles ahead, and the likelihood of success. Always, however, there is no substitute hard work. I can attest that the results of efforts along these directions within a technology company can be very exciting and satisfying, and the process along the way a whole lot of fun.

A diary after dinner: How the time of event recording influences later accessibility of diary events.

Science.gov (United States)

Szőllősi, Ágnes; Keresztes, Attila; Conway, Martin A; Racsmány, Mihály

2015-01-01

Recording the events of a day in a diary may help improve their later accessibility. An interesting question is whether improvements in long-term accessibility will be greater if the diary is completed at the end of the day, or after a period of sleep, the following morning. We investigated this question using an internet-based diary method. On each of five days, participants (n = 109) recorded autobiographical memories for that day or for the previous day. Recording took place either in the morning or in the evening. Following a 30-day retention interval, the diary events were free recalled. We found that participants who recorded their memories in the evening before sleep had best memory performance. These results suggest that the time of reactivation and recording of recent autobiographical events has a significant effect on the later accessibility of those diary events. We discuss our results in the light of related findings that show a beneficial effect of reduced interference during sleep on memory consolidation and reconsolidation.

Ferroelectric tunneling element and memory applications which utilize the tunneling element

Science.gov (United States)

Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

2010-07-20

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Autobiographical memory decline in Alzheimer’s Disease

Science.gov (United States)

EL HAJ, Mohamad; Antoine, Pascal; Nandrino, Jean-Louis; Kapogiannis, Dimitrios

2016-01-01

Autobiographical memory, or memory for personal experiences, allows individuals to define themselves and construct a meaningful life story. Decline of this ability, as observed in Alzheimer’s Disease (AD), results in an impaired sense of self and identity. We present a critical review of theories and findings regarding cognitive and neuroanatomical underpinnings of autobiographical memory and its decline in AD and highlight studies on its clinical rehabilitation. We propose that autobiographical recall in AD is mainly characterized by loss of associated episodic information, which leads to de-contextualisation of autobiographical memories and a shift from reliving past events to a general sense of familiarity. This decline refers to retrograde, but also anterograde amnesia that affects newly acquired memories besides remote ones. One consequence of autobiographical memory decline in AD is decreased access to memories that shape self-consciousness, self-knowledge, and self-images, leading to a diminished sense of self and identity. The link between autobiographical decline and compromised sense of self in AD can also manifest itself as low correspondence and coherence between past memories and current goals and beliefs. By linking cognitive, neuroanatomical, and clinical aspects of autobiographical decline in AD, our review provides a theoretical foundation, which may lead to better rehabilitation strategies. PMID:26876367

Episodic and Semantic Memory Influences on Picture Naming in Alzheimer's Disease

Science.gov (United States)

Small, Jeff A.; Sandhu, Nirmaljeet

2008-01-01

This study investigated the relationship between semantic and episodic memory as they support lexical access by healthy younger and older adults and individuals with Alzheimer's disease (AD). In particular, we were interested in examining the pattern of semantic and episodic memory declines in AD (i.e., word-finding difficulty and impaired recent…

Individual Differences in the Effects of Retrieval from Long-Term Memory

Science.gov (United States)

Brewer, Gene A.; Unsworth, Nash

2012-01-01

The current study examined individual differences in the effects of retrieval from long-term memory (i.e., the testing effect). The effects of retrieving from memory make tested information more accessible for future retrieval attempts. Despite the broad applied ramifications of such a potent memorization technique there is a paucity of research…

A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability.

Science.gov (United States)

Kim, Hyungjin; Kim, Sihyun; Kim, Hyun-Min; Lee, Kitae; Kim, Sangwan; Pak, Byung-Gook

2018-09-01

In this study, we investigate a one-transistor (1T) dynamic random access memory (DRAM) cell based on a gated-thyristor device utilizing voltage-driven bistability to enable high-speed operations. The structural feature of the surrounding gate using a sidewall provides high scalability with regard to constructing an array architecture of the proposed devices. In addition, the operation mechanism, I-V characteristics, DRAM operations, and bias dependence are analyzed using a commercial device simulator. Unlike conventional 1T DRAM cells utilizing the floating body effect, excess carriers which are required to be stored to make two different states are not generated but injected from the n+ cathode region, giving the device high-speed operation capabilities. The findings here indicate that the proposed DRAM cell offers distinct advantages in terms of scalability and high-speed operations.

Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

Science.gov (United States)

Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

2018-04-01

Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

Induced forgetting and reduced confidence in our personal past? The consequences of selectively retrieving emotional autobiographical memories.

Science.gov (United States)

Stone, Charles B; Luminet, Olivier; Hirst, William

2013-10-01

People build their sense of self, in part, through their memories of their personal past. What is striking about these personal memories is that, in many instances, they are inaccurate, yet confidently held. Most researchers assume that confidence ratings are based, in large part, on the memory's mnemonic features. That is, the more vivid or detailed the memory, the higher the confidence people have in its accuracy. However, we explore a heretofore underappreciated source on which confidence ratings may be based: the accessibility of memories as a result of selective retrieval. To explore this possibility, we use Anderson, Bjork, and Bjork's retrieval-induced forgetting (RIF) paradigm with emotional (positive and negative) autobiographical memories. We found the standard RIF effect for memory recall across emotional valence. That is, selective retrieval of emotional autobiographical memories induced forgetting of related, but not retrieved emotional autobiographical memories compared to the baseline. More interestingly, we found that the confidence ratings for positive memories mirrored the RIF pattern: decreased confidence for related, unpracticed autobiographical memories relative to the baseline. For negative memories, we found the opposite pattern: increased confidence for both practiced autobiographical memories and related, unpracticed autobiographical memories. We discuss these results in terms of accessibility, the diverging mnemonic consequences of selectively retrieving positive and negative autobiographical memories and personal identity. © 2013.

Autobiographical memory specificity in dissociative identity disorder.

Science.gov (United States)

Huntjens, Rafaële J C; Wessel, Ineke; Hermans, Dirk; van Minnen, Agnes

2014-05-01

A lack of adequate access to autobiographical knowledge has been related to psychopathology. More specifically, patients suffering from depression or a history of trauma have been found to be characterized by overgeneral memory, in other words, they show a relative difficulty in retrieving a specific event from memory located in time and place. Previous studies of overgeneral memory have not included patients with dissociative disorders. These patients are interesting to consider, as they are hypothesized to have the ability to selectively compartmentalize information linked to negative emotions. This study examined avoidance and overgeneral memory in patients with dissociative identity disorder (DID; n = 12). The patients completed the autobiographical memory test (AMT). Their performance was compared with control groups of posttraumatic stress disorder (PTSD) patients (n = 26), healthy controls (n = 29), and DID simulators (n = 26). Specifically, we compared the performance of separate identity states in DID hypothesized to diverge in the use of avoidance as a coping strategy to deal with negative affect. No significant differences in memory specificity were found between the separate identities in DID. Irrespective of identity state, DID patients were characterized by a lack of memory specificity, which was similar to the lack of memory specificity found in PTSD patients. The converging results for DID and PTSD patients add empirical evidence for the role of overgeneral memory involved in the maintenance of posttraumatic psychopathology.

Genome accessibility is widely preserved and locally modulated during mitosis.

Science.gov (United States)

Hsiung, Chris C-S; Morrissey, Christapher S; Udugama, Maheshi; Frank, Christopher L; Keller, Cheryl A; Baek, Songjoon; Giardine, Belinda; Crawford, Gregory E; Sung, Myong-Hee; Hardison, Ross C; Blobel, Gerd A

2015-02-01

Mitosis entails global alterations to chromosome structure and nuclear architecture, concomitant with transient silencing of transcription. How cells transmit transcriptional states through mitosis remains incompletely understood. While many nuclear factors dissociate from mitotic chromosomes, the observation that certain nuclear factors and chromatin features remain associated with individual loci during mitosis originated the hypothesis that such mitotically retained molecular signatures could provide transcriptional memory through mitosis. To understand the role of chromatin structure in mitotic memory, we performed the first genome-wide comparison of DNase I sensitivity of chromatin in mitosis and interphase, using a murine erythroblast model. Despite chromosome condensation during mitosis visible by microscopy, the landscape of chromatin accessibility at the macromolecular level is largely unaltered. However, mitotic chromatin accessibility is locally dynamic, with individual loci maintaining none, some, or all of their interphase accessibility. Mitotic reduction in accessibility occurs primarily within narrow, highly DNase hypersensitive sites that frequently coincide with transcription factor binding sites, whereas broader domains of moderate accessibility tend to be more stable. In mitosis, proximal promoters generally maintain their accessibility more strongly, whereas distal regulatory elements tend to lose accessibility. Large domains of DNA hypomethylation mark a subset of promoters that retain accessibility during mitosis and across many cell types in interphase. Erythroid transcription factor GATA1 exerts site-specific changes in interphase accessibility that are most pronounced at distal regulatory elements, but has little influence on mitotic accessibility. We conclude that features of open chromatin are remarkably stable through mitosis, but are modulated at the level of individual genes and regulatory elements. © 2015 Hsiung et al.; Published by

Scopes describe frames : A uniform model for memory layout in dynamic semantics

NARCIS (Netherlands)

Poulsen, C.B.; Neron, P.J.M.; Tolmach, Andrew; Visser, Eelco; Krishnamurthi, Shriram; Lerner, Benjamin S.

2016-01-01

Semantic specifications do not make a systematic connection between the names and scopes in the static structure of a program and memory layout, and access during its execution. In this paper we introduce a systematic approach to the alignment of names in static semantics and memory in dynamic

Information and processes underlying semantic and episodic memory across tasks, items, and individuals.

Science.gov (United States)

Cox, Gregory E; Hemmer, Pernille; Aue, William R; Criss, Amy H

2018-04-01

The development of memory theory has been constrained by a focus on isolated tasks rather than the processes and information that are common to situations in which memory is engaged. We present results from a study in which 453 participants took part in five different memory tasks: single-item recognition, associative recognition, cued recall, free recall, and lexical decision. Using hierarchical Bayesian techniques, we jointly analyzed the correlations between tasks within individuals-reflecting the degree to which tasks rely on shared cognitive processes-and within items-reflecting the degree to which tasks rely on the same information conveyed by the item. Among other things, we find that (a) the processes involved in lexical access and episodic memory are largely separate and rely on different kinds of information, (b) access to lexical memory is driven primarily by perceptual aspects of a word, (c) all episodic memory tasks rely to an extent on a set of shared processes which make use of semantic features to encode both single words and associations between words, and (d) recall involves additional processes likely related to contextual cuing and response production. These results provide a large-scale picture of memory across different tasks which can serve to drive the development of comprehensive theories of memory. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

The role of gestures in spatial working memory and speech.

Science.gov (United States)

Morsella, Ezequiel; Krauss, Robert M

2004-01-01

Co-speech gestures traditionally have been considered communicative, but they may also serve other functions. For example, hand-arm movements seem to facilitate both spatial working memory and speech production. It has been proposed that gestures facilitate speech indirectly by sustaining spatial representations in working memory. Alternatively, gestures may affect speech production directly by activating embodied semantic representations involved in lexical search. Consistent with the first hypothesis, we found participants gestured more when describing visual objects from memory and when describing objects that were difficult to remember and encode verbally. However, they also gestured when describing a visually accessible object, and gesture restriction produced dysfluent speech even when spatial memory was untaxed, suggesting that gestures can directly affect both spatial memory and lexical retrieval.

Autobiographical memories for negative and positive events in war contexts

Directory of Open Access Journals (Sweden)

Antonio L. Manzanero

2015-01-01

Full Text Available The aim of the present study was to examine the phenomenological qualities of self-reported negative and positive memories. The study was conducted in the Gaza Strip, Palestine, and a total of 134 autobiographical memories about negative and positive events were analyzed using a version of the Phenomenological Questionnaire for Autobiographical Memory (Manzanero & López, 2007. Participants were university students, 80 percent were women and 20 percent were men. Results showed that negative memories are more confused, more complex, and decay more over time than positive ones. In contrast, no differences were found between positive and negative memories on sensory information, spatial location, vividness, definition, accessibility, fragmentation, recall perspective, doubts about the accuracy of the memory, and how much participants recovered and talked about the event. High Dimensional Visualization (HDV graph revealed that there were individual differences between negative and positive memories but no consistent differences across participants.

Media multitasking and memory: Differences in working memory and long-term memory.

Science.gov (United States)

Uncapher, Melina R; K Thieu, Monica; Wagner, Anthony D

2016-04-01

Increasing access to media in the 21st century has led to a rapid rise in the prevalence of media multitasking (simultaneous use of multiple media streams). Such behavior is associated with various cognitive differences, such as difficulty filtering distracting information and increased trait impulsivity. Given the rise in media multitasking by children, adolescents, and adults, a full understanding of the cognitive profile of media multitaskers is imperative. Here we investigated the relationship between chronic media multitasking and working memory (WM) and long-term memory (LTM) performance. Four key findings are reported (1) heavy media multitaskers (HMMs) exhibited lower WM performance, regardless of whether external distraction was present or absent; (2) lower performance on multiple WM tasks predicted lower LTM performance; (3) media multitasking-related differences in memory reflected differences in discriminability rather than decision bias; and (4) attentional impulsivity correlated with media multitasking behavior and reduced WM performance. These findings suggest that chronic media multitasking is associated with a wider attentional scope/higher attentional impulsivity, which may allow goal-irrelevant information to compete with goal-relevant information. As a consequence, heavy media multitaskers are able to hold fewer or less precise goal-relevant representations in WM. HMMs' wider attentional scope, combined with their diminished WM performance, propagates forward to yield lower LTM performance. As such, chronic media multitasking is associated with a reduced ability to draw on the past--be it very recent or more remote--to inform present behavior.

Respecting Relations: Memory Access and Antecedent Retrieval in Incremental Sentence Processing

Science.gov (United States)

Kush, Dave W.

2013-01-01

This dissertation uses the processing of anaphoric relations to probe how linguistic information is encoded in and retrieved from memory during real-time sentence comprehension. More specifically, the dissertation attempts to resolve a tension between the demands of a linguistic processor implemented in a general-purpose cognitive architecture and…

Insights from child development on the relationship between episodic and semantic memory.

Science.gov (United States)

Robertson, Erin K; Köhler, Stefan

2007-11-05

The present study was motivated by a recent controversy in the neuropsychological literature on semantic dementia as to whether episodic encoding requires semantic processing or whether it can proceed solely based on perceptual processing. We addressed this issue by examining the effect of age-related limitations in semantic competency on episodic memory in 4-6-year-old children (n=67). We administered three different forced-choice recognition memory tests for pictures previously encountered in a single study episode. The tests varied in the degree to which access to semantically encoded information was required at retrieval. Semantic competency predicted recognition performance regardless of whether access to semantic information was required. A direct relation between picture naming at encoding and subsequent recognition was also found for all tests. Our findings emphasize the importance of semantic encoding processes even in retrieval situations that purportedly do not require access to semantic information. They also highlight the importance of testing neuropsychological models of memory in different populations, healthy and brain damaged, at both ends of the developmental continuum.

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

International Nuclear Information System (INIS)

Li Da-Wei; Qin Jun-Rui; Chen Shu-Ming

2013-01-01

Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation. (geophysics, astronomy, and astrophysics)

Unraveling Network-induced Memory Contention: Deeper Insights with Machine Learning

International Nuclear Information System (INIS)

Groves, Taylor Liles; Grant, Ryan; Gonzales, Aaron; Arnold, Dorian

2017-01-01

Remote Direct Memory Access (RDMA) is expected to be an integral communication mechanism for future exascale systems enabling asynchronous data transfers, so that applications may fully utilize CPU resources while simultaneously sharing data amongst remote nodes. We examine Network-induced Memory Contention (NiMC) on Infiniband networks. We expose the interactions between RDMA, main-memory and cache, when applications and out-of-band services compete for memory resources. We then explore NiMCs resulting impact on application-level performance. For a range of hardware technologies and HPC workloads, we quantify NiMC and show that NiMCs impact grows with scale resulting in up to 3X performance degradation at scales as small as 8K processes even in applications that previously have been shown to be performance resilient in the presence of noise. In addition, this work examines the problem of predicting NiMC's impact on applications by leveraging machine learning and easily accessible performance counters. This approach provides additional insights about the root cause of NiMC and facilitates dynamic selection of potential solutions. Finally, we evaluated three potential techniques to reduce NiMCs impact, namely hardware offloading, core reservation and network throttling.

The Impact of Process Scaling on Scratchpad Memory Energy Savings

Directory of Open Access Journals (Sweden)

Bennion Redd

2014-09-01

Full Text Available Scratchpad memories have been shown to reduce power consumption, but the different characteristics of nanometer scale processes, such as increased leakage power, motivate an examination of how the benefits of these memories change with process scaling. Process and application characteristics affect the amount of energy saved by a scratchpad memory. Increases in leakage as a percentage of total power particularly impact applications that rarely access memory. This study examines how the benefits of scratchpad memories have changed in newer processes, based on the measured performance of the WIMS (Wireless Integrated MicroSystems microcontroller implemented in 180- and 65-nm processes and upon simulations of this microcontroller implemented in a 32-nm process. The results demonstrate that scratchpad memories will continue to improve the power dissipation of many applications, given the leakage anticipated in the foreseeable future.

Multi-Level Bitmap Indexes for Flash Memory Storage

Energy Technology Data Exchange (ETDEWEB)

Wu, Kesheng; Madduri, Kamesh; Canon, Shane

2010-07-23

Due to their low access latency, high read speed, and power-efficient operation, flash memory storage devices are rapidly emerging as an attractive alternative to traditional magnetic storage devices. However, tests show that the most efficient indexing methods are not able to take advantage of the flash memory storage devices. In this paper, we present a set of multi-level bitmap indexes that can effectively take advantage of flash storage devices. These indexing methods use coarsely binned indexes to answer queries approximately, and then use finely binned indexes to refine the answers. Our new methods read significantly lower volumes of data at the expense of an increased disk access count, thus taking full advantage of the improved read speed and low access latency of flash devices. To demonstrate the advantage of these new indexes, we measure their performance on a number of storage systems using a standard data warehousing benchmark called the Set Query Benchmark. We observe that multi-level strategies on flash drives are up to 3 times faster than traditional indexing strategies on magnetic disk drives.

Collective Memory Transfers for Multi-Core Chips

Energy Technology Data Exchange (ETDEWEB)

Michelogiannakis, George; Williams, Alexander; Shalf, John

2013-11-13

Future performance improvements for microprocessors have shifted from clock frequency scaling towards increases in on-chip parallelism. Performance improvements for a wide variety of parallel applications require domain-decomposition of data arrays from a contiguous arrangement in memory to a tiled layout for on-chip L1 data caches and scratchpads. How- ever, DRAM performance suffers under the non-streaming access patterns generated by many independent cores. We propose collective memory scheduling (CMS) that actively takes control of collective memory transfers such that requests arrive in a sequential and predictable fashion to the memory controller. CMS uses the hierarchically tiled arrays formal- ism to compactly express collective operations, which greatly improves programmability over conventional prefetch or list- DMA approaches. CMS reduces application execution time by up to 32% and DRAM read power by 2.2×, compared to a baseline DMA architecture such as STI Cell.

Activation and Binding in Verbal Working Memory: A Dual-Process Model for the Recognition of Nonwords

Science.gov (United States)

Oberauer, Klauss; Lange, Elke B.

2009-01-01

The article presents a mathematical model of short-term recognition based on dual-process models and the three-component theory of working memory [Oberauer, K. (2002). Access to information in working memory: Exploring the focus of attention. "Journal of Experimental Psychology: Learning, Memory, and Cognition, 28", 411-421]. Familiarity arises…

Auditory and Visual Memory Span: Cognitive Processing by TMR Individuals with Down Syndrome or Other Etiologies.

Science.gov (United States)

Varnhagen, Connie K.; And Others

1987-01-01

Auditory and visual memory span were examined with 13 Down Syndrome and 15 other trainable mentally retarded young adults. Although all subjects demonstrated relatively poor auditory memory span, Down Syndrome subjects were especially poor at long-term memory access for visual stimulus identification and short-term storage and processing of…

Fuzzy-trace theory: dual processes in memory, reasoning, and cognitive neuroscience.

Science.gov (United States)

Brainerd, C J; Reyna, V F

2001-01-01

reasoning. More explicitly, in childhood reasoning tasks, it is assumed that both verbatim and gist traces of problem information are stored. Responding accurately to memory tests for presented problem information depends primarily on verbatim memory abilities (preserving traces of that information and accessing them when the appropriate memory probes are administered). However, accurate solutions to reasoning problems depend primarily on gist-memory abilities (extracting the correct gist from problem information, focusing on that gist during reasoning, and accessing reasoning operations that process that gist). Because verbatim and gist memories exhibit considerable dissociation, both during storage and when they are subsequently accessed on memory tests, dissociations of verbatim-based memory performance from gist-based reasoning are predictable. Conversely, associations are predicted in situations in which memory and reasoning are based on the same verbatim traces (Brainerd & Reyna, 1988) and in situations in which memory and reasoning are based on the same gist traces (Reyna & Kiernan, 1994). Fuzzy-trace theory's memory and reasoning principles have been applied in other research domains. Four such domains are developmental cognitive neuroscience studies of false memory, studies of false memory in brain-damaged patients, studies of reasoning errors in judgment and decision making, and studies of retrieval mechanisms in recall. In the first domain, the principles of parallel verbatim-gist storage, dissociated verbatim-gist retrieval, and identity/similarity processes have been used to explain both spontaneous and implanted false reports in children and in the elderly. These explanations have produced some surprising predictions that have been verified: false reports do not merely decline with age during childhood but increase under theoretically specified conditions; reports of events that were not experienced can nevertheless be highly persistent over time; and false

Parameter optimization for transitions between memory states in small arrays of Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Rezac, Jacob D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computer Science and Mathematics Division; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computing and Computational Sciences Directorate; Univ. of Delaware, Newark, DE (United States). Dept. of Mathematical Sciences; Imam, Neena [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computing and Computational Sciences Directorate; Braiman, Yehuda [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computer Science and Mathematics Division; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computing and Computational Sciences Directorate; ; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Mechanical, Aerospace, and Biomedical Engineering

2017-01-11

Coupled arrays of Josephson junctions possess multiple stable zero voltage states. Such states can store information and consequently can be utilized for cryogenic memory applications. Basic memory operations can be implemented by sending a pulse to one of the junctions and studying transitions between the states. In order to be suitable for memory operations, such transitions between the states have to be fast and energy efficient. Here in this article we employed simulated annealing, a stochastic optimization algorithm, to study parameter optimization of array parameters which minimizes times and energies of transitions between specifically chosen states that can be utilized for memory operations (Read, Write, and Reset). Simulation results show that such transitions occur with access times on the order of 10–100 ps and access energies on the order of 10^-19–5×10^-18 J. Numerical simulations are validated with approximate analytical results.

Early childhood language memory in the speech perception of international adoptees.

Science.gov (United States)

Oh, Janet S; Au, Terry Kit-Fong; Jun, Sun-Ah

2010-11-01

It is as yet unclear whether the benefits of early linguistic experiences can be maintained without at least some minimal continued exposure to the language. This study compared 12 adults adopted from Korea to the US as young children (all but one prior to age one year) to 13 participants who had no prior exposure to Korean to examine whether relearning can aid in accessing early childhood language memory. All 25 participants were recruited and tested during the second week of first-semester college Korean language classes. They completed a language background questionnaire and interview, a childhood slang task and a Korean phoneme identification task. Results revealed an advantage for adoptee participants in identifying some Korean phonemes, suggesting that some components of early childhood language memory can remain intact despite many years of disuse, and that relearning a language can help in accessing such a memory.

The recall of information from working memory : insights from behavioural and chronometric perspectives.

OpenAIRE

Towse, John N.; Cowan, Nelson; Hitch, Graham J.; Horton, Neil

2008-01-01

We describe and evaluate a recall reconstruction hypothesis for working memory (WM), according to which items can be recovered from multiple memory representations. Across four experiments, participants recalled memoranda that were either integrated with or independent of the sentence content. We found consistently longer pauses accompanying the correct recall of integrated compared with independent words, supporting the argument that sentence memory could scaffold the access of target items....

Problems of the experimental implementation of MTJ

International Nuclear Information System (INIS)

Mazaletskiy, L A; Rudy, A S; Trushin, O S; Naumov, V V; Mironenko, A A; Vasilev, S V

2015-01-01

The results of experimental studies of MRAM technology based on standard magnetic tunneling junctions are presented. Basic steps of experimental fabrication of MRAM cell are considered. Experimental samples of MTJ with variable lateral sizes are fabricated. Current-voltage characteristics of the tunnel barriers are investigated. Main parameters of the tunnel barriers are estimated from comparison of the experimental data with the theory. (paper)

Using DMA for copying performance counter data to memory

Science.gov (United States)

Gara, Alan; Salapura, Valentina; Wisniewski, Robert W

2013-12-31

A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance data.

Sub-1-V-60 nm vertical body channel MOSFET-based six-transistor static random access memory array with wide noise margin and excellent power delay product and its optimization with the cell ratio on static random access memory cell

Science.gov (United States)

Ogasawara, Ryosuke; Endoh, Tetsuo

2018-04-01

In this study, with the aim to achieve a wide noise margin and an excellent power delay product (PDP), a vertical body channel (BC)-MOSFET-based six-transistor (6T) static random access memory (SRAM) array is evaluated by changing the number of pillars in each part of a SRAM cell, that is, by changing the cell ratio in the SRAM cell. This 60 nm vertical BC-MOSFET-based 6T SRAM array realizes 0.84 V operation under the best PDP and up to 31% improvement of PDP compared with the 6T SRAM array based on a 90 nm planar MOSFET whose gate length and channel width are the same as those of the 60 nm vertical BC-MOSFET. Additionally, the vertical BC-MOSFET-based 6T SRAM array achieves an 8.8% wider read static noise margin (RSNM), a 16% wider write margin (WM), and an 89% smaller leakage. Moreover, it is shown that changing the cell ratio brings larger improvements of RSNM, WM, and write time in the vertical BC-MOSFET-based 6T SRAM array.

Autobiographical Memory Specificity in Dissociative Identity Disorder

NARCIS (Netherlands)

Huntjens, R.J.C.; Wessel, I.; Hermans, D.; Minnen, A. van

2014-01-01

A lack of adequate access to autobiographical knowledge has been related to psychopathology. More specifically, patients suffering from depression or a history of trauma have been found to be characterized by overgeneral memory, in other words, they show a relative difficulty in retrieving a

Autobiographical memory specificity in dissociative identity disorder

NARCIS (Netherlands)

Huntjens, Rafaële J. C.; Wessel, Ineke; Hermans, Dirk; van Minnen, Agnes

A lack of adequate access to autobiographical knowledge has been related to psychopathology. More specifically, patients suffering from depression or a history of trauma have been found to be characterized by overgeneral memory, in other words, they show a relative difficulty in retrieving a

Temperature induced complementary switching in titanium oxide resistive random access memory

Energy Technology Data Exchange (ETDEWEB)

Panda, D., E-mail: dpanda@nist.edu [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Simanjuntak, F. M.; Tseng, T.-Y. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-07-15

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

76 FR 55417 - In the Matter of Certain Dynamic Random Access Memory and Nand Flash Memory Devices and Products...

Science.gov (United States)

2011-09-07

... Bldg. 3F, 2-1 Yaesu 2- chome Chuo-ku, Tokyo 104-0028, Japan. Elpida Memory (USA) Inc., 1175 Sonora..., Round Rock, TX 78682. Hewlett-Packard Company, 3000 Hanover Street, Palo Alto, CA 94304. Kingston...

A histogram memory plug-in board for IBM-PC based nuclear pulse height analysis applications

International Nuclear Information System (INIS)

Behere, Anita; Ghodgaonkar, M.D.

1989-01-01

The histogram memory PC plug-in board has 8K x 24 dual ported memory with access from PC as well as from on board data acquisition logic. The arbitration control logic monitors the memory access requests from both the sources and honours them on first come first served basis. The data acquisition logic takes only 840 ns. to perform Read-Modify-Write memory operation. The data acquisition logic incorporates ADC interface logic for connecting to a NIM ADC which is normally housed in a NIM system along with other required front-end processing modules. Two interval timers are provided on the board. One of them provides Live Time/Clock Time counting and the other generates a 200 ms interrupt which is used for live spectrum display. The board is fully supported with system and data processing software developed in Turbo Pascal. (author)

Memory Retrieval Given Two Independent Cues: Cue Selection or Parallel Access?

Science.gov (United States)

Rickard, Timothy C.; Bajic, Daniel

2004-01-01

A basic but unresolved issue in the study of memory retrieval is whether multiple independent cues can be used concurrently (i.e., in parallel) to recall a single, common response. A number of empirical results, as well as potentially applicable theories, suggest that retrieval can proceed in parallel, though Rickard (1997) set forth a model that…

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Axially modulated arch resonator for logic and memory applications

KAUST Repository

Hafiz, Md Abdullah Al; Tella, Sherif Adekunle; Alcheikh, Nouha; Fariborzi, Hossein; Younis, Mohammad I.

2018-01-01

We demonstrate reconfigurable logic and random access memory devices based on an axially modulated clamped-guided arch resonator. The device is electrostatically actuated and the motional signal is capacitively sensed, while the resonance frequency