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Sample records for absolute photoluminescence quantum

  1. Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

    Science.gov (United States)

    Reshchikov, M. A.; Willyard, A. G.; Behrends, A.; Bakin, A.; Waag, A.

    2011-10-01

    We report on the fabrication of GaN co-doped with silicon and zinc by metalorganic vapor phase epitaxy and a detailed study of photoluminescence in this material. We observe an exceptionally high absolute internal quantum efficiency of blue photoluminescence in GaN:Zn,Si. The value of 0.93±0.04 has been obtained from several approaches based on rate equations.

  2. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

    Science.gov (United States)

    Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

    2012-04-01

    The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

  3. Highly Luminescent Phase-Stable CsPbI3 Perovskite Quantum Dots Achieving Near 100% Absolute Photoluminescence Quantum Yield.

    Science.gov (United States)

    Liu, Feng; Zhang, Yaohong; Ding, Chao; Kobayashi, Syuusuke; Izuishi, Takuya; Nakazawa, Naoki; Toyoda, Taro; Ohta, Tsuyoshi; Hayase, Shuzi; Minemoto, Takashi; Yoshino, Kenji; Dai, Songyuan; Shen, Qing

    2017-10-24

    Perovskite quantum dots (QDs) as a new type of colloidal nanocrystals have gained significant attention for both fundamental research and commercial applications owing to their appealing optoelectronic properties and excellent chemical processability. For their wide range of potential applications, synthesizing colloidal QDs with high crystal quality is of crucial importance. However, like most common QD systems such as CdSe and PbS, those reported perovskite QDs still suffer from a certain density of trapping defects, giving rise to detrimental nonradiative recombination centers and thus quenching luminescence. In this paper, we show that a high room-temperature photoluminescence quantum yield of up to 100% can be obtained in CsPbI 3 perovskite QDs, signifying the achievement of almost complete elimination of the trapping defects. This is realized with our improved synthetic protocol that involves introducing organolead compound trioctylphosphine-PbI 2 (TOP-PbI 2 ) as the reactive precursor, which also leads to a significantly improved stability for the resulting CsPbI 3 QD solutions. Ultrafast kinetic analysis with time-resolved transient absorption spectroscopy evidence the negligible electron or hole-trapping pathways in our QDs, which explains such a high quantum efficiency. We expect the successful synthesis of the "ideal" perovskite QDs will exert profound influence on their applications to both QD-based light-harvesting and -emitting devices.

  4. Absolute determination of photoluminescence quantum efficiency using an integrating sphere setup

    International Nuclear Information System (INIS)

    Leyre, S.; Coutino-Gonzalez, E.; Hofkens, J.; Joos, J. J.; Poelman, D.; Smet, P. F.; Ryckaert, J.; Meuret, Y.; Durinck, G.; Hanselaer, P.; Deconinck, G.

    2014-01-01

    An integrating sphere-based setup to obtain a quick and reliable determination of the internal quantum efficiency of strongly scattering luminescent materials is presented. In literature, two distinct but similar measurement procedures are frequently mentioned: a “two measurement” and a “three measurement” approach. Both methods are evaluated by applying the rigorous integrating sphere theory. It was found that both measurement procedures are valid. Additionally, the two methods are compared with respect to the uncertainty budget of the obtained values of the quantum efficiency. An inter-laboratory validation using the two distinct procedures was performed. The conclusions from the theoretical study were confirmed by the experimental data

  5. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  6. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  7. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  8. Photoluminescence of hybrid quantum dot systems

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2015-01-01

    Roč. 7, č. 4 (2015), 347-349 ISSN 2164-6627 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * energy transfer * electron-phonon interaction Subject RIV: BM - Solid Matter Physics ; Magnetism

  9. Power-law photoluminescence decay in quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2013-01-01

    Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

  10. Solvothermal tuning of photoluminescent graphene quantum dots: from preparation to photoluminescence mechanism

    Science.gov (United States)

    Qi, Bao-Ping; Zhang, Xiaoru; Shang, Bing-Bing; Xiang, Dongshan; Zhang, Shenghui

    2018-02-01

    Solvothermal synthesis was employed to tune the surface states of graphene quantum dots (GQDs). Two series of GQDs with the particle sizes from 2.6 to 4.5 nm were prepared as follows: (I) GQDs with the same size but different oxygen degrees; (II) GQDs with different core sizes but the similar surface chemistry. Both the large sizes and the high surface oxidation degrees led to the redshift photoluminescence (PL) of GQDs. Electrochemiluminescence (ECL) spectra from two series of GQDs were all in accordance with their PL spectra, respectively, which provided good evidence for the conjugated structures in GQDs responsible for PL. [Figure not available: see fulltext.

  11. Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

    Energy Technology Data Exchange (ETDEWEB)

    Isaac, A.

    2006-08-11

    The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

  12. Photoluminescence efficiency in AlGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

    2014-11-15

    Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

  13. Power-law photoluminescence decay in indirect gap quantum dots

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Král, Karel

    2013-01-01

    Roč. 111, November (2013), s. 170-174 ISSN 0167-9317 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12186; GA MŠk LH12236; GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : quantum dots * indirect gap transition * power-law photoluminescence decay Subject RIV: BM - Solid Matter Physics ; Magnetism; BE - Theoretical Physics (FZU-D) Impact factor: 1.338, year: 2013

  14. Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

    NARCIS (Netherlands)

    Fomin, V.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Koenraad, P.M.; Wolter, J.H.

    2000-01-01

    We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes.

  15. Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

    International Nuclear Information System (INIS)

    Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

    2008-01-01

    Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

  16. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  17. On quantum harmonic oscillator being subjected to absolute ...

    Indian Academy of Sciences (India)

    On quantum harmonic oscillator being subjected to absolute potential state. SWAMI NITYAYOGANANDA. Ramakrishna Mission Ashrama, R.K. Beach, Visakhapatnam 530 003, India. E-mail: nityayogananda@gmail.com. MS received 1 May 2015; accepted 6 May 2016; published online 3 December 2016. Abstract.

  18. Fluctuation theorems in feedback-controlled open quantum systems: Quantum coherence and absolute irreversibility

    Science.gov (United States)

    Murashita, Yûto; Gong, Zongping; Ashida, Yuto; Ueda, Masahito

    2017-10-01

    The thermodynamics of quantum coherence has attracted growing attention recently, where the thermodynamic advantage of quantum superposition is characterized in terms of quantum thermodynamics. We investigate the thermodynamic effects of quantum coherent driving in the context of the fluctuation theorem. We adopt a quantum-trajectory approach to investigate open quantum systems under feedback control. In these systems, the measurement backaction in the forward process plays a key role, and therefore the corresponding time-reversed quantum measurement and postselection must be considered in the backward process, in sharp contrast to the classical case. The state reduction associated with quantum measurement, in general, creates a zero-probability region in the space of quantum trajectories of the forward process, which causes singularly strong irreversibility with divergent entropy production (i.e., absolute irreversibility) and hence makes the ordinary fluctuation theorem break down. In the classical case, the error-free measurement ordinarily leads to absolute irreversibility, because the measurement restricts classical paths to the region compatible with the measurement outcome. In contrast, in open quantum systems, absolute irreversibility is suppressed even in the presence of the projective measurement due to those quantum rare events that go through the classically forbidden region with the aid of quantum coherent driving. This suppression of absolute irreversibility exemplifies the thermodynamic advantage of quantum coherent driving. Absolute irreversibility is shown to emerge in the absence of coherent driving after the measurement, especially in systems under time-delayed feedback control. We show that absolute irreversibility is mitigated by increasing the duration of quantum coherent driving or decreasing the delay time of feedback control.

  19. Surface effects on the photoluminescence of Si quantum dots

    International Nuclear Information System (INIS)

    Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

    2009-01-01

    Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

  20. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    International Nuclear Information System (INIS)

    Liu Tiancai; Huang Zhenli; Wang Haiqiao; Wang Jianhao; Li Xiuqing; Zhao Yuandi; Luo Qingming

    2006-01-01

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of ∼0.11 nm K -1 . And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science

  1. Temperature-dependent photoluminescence of water-soluble quantum dots for a bioprobe

    Energy Technology Data Exchange (ETDEWEB)

    Liu Tiancai [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Huang Zhenli [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Haiqiao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Wang Jianhao [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Li Xiuqing [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China); Zhao Yuandi [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)]. E-mail: zydi@mail.hust.edu.cn; Luo Qingming [Key Laboratory of Biomedical Photonics of Ministry of Education - Hubei Bioinformatics and Molecular Imaging Key Laboratory, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2006-02-10

    The photoluminescence of water-soluble CdSe/ZnS core/shell quantum dots is found to be temperature-dependent: as temperature arising from 280 K to 351 K, the photoluminescence declines with emission peak shifting towards the red at a rate of {approx}0.11 nm K{sup -1}. And the studies show that the photoluminescence of water-soluble CdSe/ZnS quantum dots with core capped by a thinner ZnS shell is more sensitive to temperature than that of ones with core capped by a thicker one. That is, with 50% decrement of the quantum yield the temperature of the former need to arise from 280 K to 295 K, while the latter requires much higher temperature (315.6 K), which means that the integrality of shell coverage is a very important factor on temperature-sensitivity to for the photoluminescence of water-soluble CdSe/ZnS quantum dots. Moreover, it is found that the water-soluble CdSe quantum dots with different core sizes, whose cores are capped by thicker ZnS shells, possess almost the same sensitivity to the temperature. All of the studies about photoluminescence temperature-dependence of water-soluble CdSe/ZnS core/shell quantum dots show an indispensable proof for their applications in life science.

  2. Optimal quantum error correcting codes from absolutely maximally entangled states

    Science.gov (United States)

    Raissi, Zahra; Gogolin, Christian; Riera, Arnau; Acín, Antonio

    2018-02-01

    Absolutely maximally entangled (AME) states are pure multi-partite generalizations of the bipartite maximally entangled states with the property that all reduced states of at most half the system size are in the maximally mixed state. AME states are of interest for multipartite teleportation and quantum secret sharing and have recently found new applications in the context of high-energy physics in toy models realizing the AdS/CFT-correspondence. We work out in detail the connection between AME states of minimal support and classical maximum distance separable (MDS) error correcting codes and, in particular, provide explicit closed form expressions for AME states of n parties with local dimension \

  3. Comparative photoluminescence study of close-packed and colloidal InP/ZnS quantum dots

    Science.gov (United States)

    Thuy, Ung Thi Dieu; Thuy, Pham Thi; Liem, Nguyen Quang; Li, Liang; Reiss, Peter

    2010-02-01

    This letter reports on the comparative photoluminescence study of InP/ZnS quantum dots in the close-packed solid state and in colloidal solution. The steady-state photoluminescence spectrum of the close-packed InP/ZnS quantum dots peaks at a longer wavelength than that of the colloidal ones. Time-resolved photoluminescence shows that the close-packed quantum dots possess a shorter luminescence decay time and strongly increased spectral shift with the time delayed from the excitation moment in comparison with the colloidal ones. The observed behavior is discussed on the basis of energy transfer enabled by the short interparticle distance between the close-packed quantum dots.

  4. Tailoring surface groups of carbon quantum dots to improve photoluminescence behaviors

    International Nuclear Information System (INIS)

    Tian, Ruixue; Hu, Shengliang; Wu, Lingling; Chang, Qing; Yang, Jinlong; Liu, Jun

    2014-01-01

    Highlights: • We develop a facile and green method to tailor surface groups. • Photoluminescence behaviors of carbon quantum dots are improved by tailoring their surface groups. • Highly luminescent efficiency is produced by amino-hydrothermal treatment of reduced carbon quantum dots. - Abstract: A facile and green method to tailor surface groups of carbon quantum dots (CQDs) is developed by hydrothermal treatment in an autoclave. The photoluminescence (PL) behaviors of CQDs depend on the types of surface groups. Highly efficient photoluminescence is obtained through amino-hydrothermal treatment of the CQDs reduced by NaBH 4 . The effects of surface groups on PL behavior are attributed to the degrees of energy band bending induced by surface groups

  5. Photoluminescence under high-electric field of PbS quantum dots

    Directory of Open Access Journals (Sweden)

    B. Ullrich

    2012-12-01

    Full Text Available The effect of a laterally applied electric field (≤10 kV/cm on the photoluminescence of colloidal PbS quantum dots (diameter of 2.7 nm on glass was studied. The field provoked a blueshift of the emission peak, a reduction of the luminescent intensity, and caused an increase in the full width at half maximum of the emission spectrum. Upon comparison with the photoluminescence of p-type GaAs exhibits the uniqueness of quantum dot based electric emission control with respect to bulk materials.

  6. The new Absolute Quantum Gravimeter (AQG): first results and perspectives

    Science.gov (United States)

    Bonvalot, Sylvain; Le Moigne, Nicolas; Merlet, Sebastien; Desruelle, Bruno; Lautier-Gaud, Jean; Menoret, Vincent; Vermeulen, Pierre

    2016-04-01

    Cold atom gravimetry represents one of the most innovative evolution in gravity instrumentation since the last 20 years. The concept of measuring the gravitational acceleration by dropping atoms and the development of the first instrumental devices during this last decade quickly revealed the promising perspectives of this new generation of gravity meters enabling accurate and absolute measurements of the Earth's gravity field for a wide range of applications (geophysics, geodesy, metrology, etc.). The Absolute Quantum Gravimeter (AQG) gravity meter, developed by MUQUANS (Talence, France - http://www.muquans.com/) with the support of RESIF, the French Seismologic and Geodetic Network (http://www.resif.fr/) belongs to this new generation of instruments. It also represents the first commercial device based on the utilization of advanced matter-wave interferometry techniques, which allow to characterize precisely the vertical acceleration experienced by a cloud of cold atoms. Recently, the first operational unit (AQG01) has been achieved as a compact transportable gravimeter with the aim of satisfying absolute gravity measurements in laboratory conditions under the following specifications: measurements the μGal level at a few Hz cycling frequency, sensitivity of 50μGal/√Hz, immunity to ground vibrations, easy and quickness of operation, automated continuous data acquisition for several months, etc. In order to evaluate the current performances of the AQG01, several experiments are carried out in collaboration between RESIF user's teams and the MUQUANS manufacturer on different reference gravity sites and laboratories in France. These measurements performed in indoor conditions including simultaneous observations with classical reference gravity instruments (corner-cube absolute gravity meters, relative superconducting meters) as well with the Cold Atom Gravity meter (CAG) developed by LNE-SYRTE, lead to a first objective characterization of the performances of

  7. Time-resolved photoluminescence measurements of InP/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Pham Thi Thuy; Ung Thi Dieu Thuy; Tran Thi Kim Chi; Le Quang Phuong; Nguyen Quang Liem [Institute of Materials Science, VAST, 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Li Liang; Reiss, Peter [CEA Grenoble, DSM/INAC/SPrAM (UMR 5819 CEA-CNRS-Universite Joseph Fourier)/LEMOH, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France)], E-mail: liemnq@ims.vast.ac.vn

    2009-09-01

    This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.

  8. Synthesis of blue photoluminescent WS2 quantum dots via ultrasonic cavitation

    International Nuclear Information System (INIS)

    Bayat, A.; Saievar-Iranizad, E.

    2017-01-01

    Blue photoluminescent WS 2 quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS 2 flakes to its quantum dots. The as synthesized WS 2 QDs showed blue photoluminescence upon UV excitation. The synthesized WS 2 QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS 2 QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS 2 quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS 2 was increased with formation of its quantum dots. •Solution of WS 2 QDs was stable after 6 months.

  9. Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

    Czech Academy of Sciences Publication Activity Database

    Neudert, K.; Trojánek, F.; Kuldová, Karla; Oswald, Jiří; Hospodková, Alice; Malý, P.

    2009-01-01

    Roč. 6, č. 4 (2009), 853-856 ISSN 1862-6351 R&D Projects: GA ČR GA202/06/0718 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum dots * photoluminescence * MOVPE Subject RIV: BM - Solid Matter Physics ; Magnetism

  10. Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings.

    Science.gov (United States)

    Abbarchi, Marco; Cavigli, Lucia; Somaschini, Claudio; Bietti, Sergio; Gurioli, Massimo; Vinattieri, Anna; Sanguinetti, Stefano

    2011-10-31

    A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.

  11. Synthesis of blue photoluminescent WS{sub 2} quantum dots via ultrasonic cavitation

    Energy Technology Data Exchange (ETDEWEB)

    Bayat, A.; Saievar-Iranizad, E., E-mail: saievare@modares.ac.ir

    2017-05-15

    Blue photoluminescent WS{sub 2} quantum dots (QDs) were synthesized using a simple top-down method from natural raw mineral tungsten disulfide via tip ultrasonication followed by centrifugation in a water-ethanol (0.7/0.3 ratio) as eco-friendly solvent. Cavitation process at a high power (300 W) led to the breaking of bulk WS{sub 2} flakes to its quantum dots. The as synthesized WS{sub 2} QDs showed blue photoluminescence upon UV excitation. The synthesized WS{sub 2} QDs were analysed by UV–vis and photoluminescence spectrophotometry, transmission electron microscopy, atomic force microscopy and X-ray diffraction. According to the transmission electron microscopy images, the size of WS{sub 2} QDs was obtained as 5 nm in average. - Highlights: •Large scale blue photoluminescent WS{sub 2} quantum dots was synthesized using Ultrasonic probe (Cavitation Process). •A solution of water/ethanol (0.7/0.3) was used as eco-friendly solvent instead of unsuitable solvent such as NMP and ACN. •Edges of bulk WS{sub 2} was increased with formation of its quantum dots. •Solution of WS{sub 2} QDs was stable after 6 months.

  12. Quantum dots with indirect band gap: power-law photoluminescence decay

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2014-01-01

    Roč. 11, č. 5 (2014), s. 507-512 ISSN 1708-5284 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : photoluminescence * quantum dots * electron-phonon interaction * inter-valley deformation potential interaction * power-law decay Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. High-resolution photoluminescence studies of single semiconductor quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Østergaard, John Erland; Jensen, Jacob Riis

    2000-01-01

    Semiconductor quantum dots, especially those formed by self-organized growth, are considered a promising material system for future optical devices [1] and the optical properties of quantum dot ensembles have been investigated in detail over the past years. Recently, considerable interest has...

  14. Detection of CdSe quantum dot photoluminescence for security label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Sugiarto, Iyon Titok [Research Center for Physics, Indonesian Institute of Science, Building 442 Puspiptek Serpong, South Tangerang, Banten, Indonesia 15314 (Indonesia); Bilqis, Ratu; Suseno, Jatmiko Endro [Department of Physics, Diponegoro University, Jl. Prof. Soedarto, Tembalang, Semarang, Indonesia 50275 (Indonesia)

    2016-02-08

    CdSe quantum dot has great potential in various applications especially for emitting devices. One example potential application of CdSe quantum dot is security label for anti-counterfeiting. In this work, we present a practical approach of security label on paper using one and two colors of colloidal CdSe quantum dot, which is used as stamping ink on various types of paper. Under ambient condition, quantum dot is almost invisible. The quantum dot security label can be revealed by detecting emission of quantum dot using photoluminescence and cnc machine. The recorded quantum dot emission intensity is then analyzed using home-made program to reveal quantum dot pattern stamp having the word ’RAHASIA’. We found that security label using quantum dot works well on several types of paper. The quantum dot patterns can survive several days and further treatment is required to protect the quantum dot. Oxidation of quantum dot that occurred during this experiment reduced the emission intensity of quantum dot patterns.

  15. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Shirazi, Roza, E-mail: rozas@fotonik.dtu.dk [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Kovacs, Andras [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grunberg Institute, Forschungszentrum Julich, 52425 Julich (Germany); Dan Corell, Dennis [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Gritti, Claudia [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul [Department of Photonics Engineering, Technical University of Denmark, Riso, Frederiksborgvej 399, 4000 Roskilde (Denmark); Kardynal, Beata [Department of Photonics Engineering, Technical University of Denmark, Oersted Plads 343, 2800 Kgs Lyngby (Denmark); PGI-9, Forschungszentrum Julich, JARA FIT, 52425 Julich (Germany)

    2014-01-15

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active.

  16. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    International Nuclear Information System (INIS)

    Shirazi, Roza; Kovacs, Andras; Dan Corell, Dennis; Gritti, Claudia; Thorseth, Anders; Dam-Hansen, Carsten; Michael Petersen, Paul; Kardynal, Beata

    2014-01-01

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude compared to the quantum efficiency of the small nanocrystals. By correlating this result with the time-resolved photoluminescence we find that the reduced photoluminescence efficiency is caused by a fast growing fraction of non-emissive nanocrystals while the quality of the nanocrystals that emit light is similar for all samples. Transmission electron microscopy reveals the polycrystalline nature of many of the large nanocrystals, pointing to the grain boundaries as one possible site for the photoluminescence quenching defects. -- Highlights: • We investigate drop of quantum efficiency of InP/ZnS nanocrystals emitting at longer wavelengths. • We correlate quantum efficiency measurements with time-resolved carrier dynamics. • We find that only a small fraction of larger nanocrystals is optically active

  17. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  18. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    International Nuclear Information System (INIS)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Casalboni, M.; Hatami, F.; Masselink, W.T.; Zhang, H.

    2016-01-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N 2 ) and in solvent vapours of methanol, chloroform, acetone and water were measured. The presence of vapors of chloroform, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed. (paper)

  19. AgCl-doped CdSe quantum dots with near-IR photoluminescence.

    Science.gov (United States)

    Kotin, Pavel Aleksandrovich; Bubenov, Sergey Sergeevich; Mordvinova, Natalia Evgenievna; Dorofeev, Sergey Gennadievich

    2017-01-01

    We report the synthesis of colloidal CdSe quantum dots doped with a novel Ag precursor: AgCl. The addition of AgCl causes dramatic changes in the morphology of synthesized nanocrystals from spherical nanoparticles to tetrapods and finally to large ellipsoidal nanoparticles. Ellipsoidal nanoparticles possess an intensive near-IR photoluminescence ranging up to 0.9 eV (ca. 1400 nm). In this article, we explain the reasons for the formation of the ellipsoidal nanoparticles as well as the peculiarities of the process. The structure, Ag content, and optical properties of quantum dots are also investigated. The optimal conditions for maximizing both the reaction yield and IR photoluminescence quantum yield are found.

  20. Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires

    International Nuclear Information System (INIS)

    Ruiz-Castillo, M.; Segura, A.; Sans, J.A.; Martinez-Pastor, J.; Fuster, D.; Gonzalez, Y.; Gonzalez, L.

    2007-01-01

    This paper investigates the electronic structure of self-assembled InAs quantum wires (QWrs), grown under different conditions by molecular beam epitaxy on InP, by means of photoluminescence measurements under pressure. In samples with regularly distributed QWrs, room pressure photoluminescence spectra consist of a broad band centred at about 0.85 eV, which can be easily de-convoluted in a few Gaussian peaks. In samples with isolated QWrs, photoluminescence spectra exhibit up to four clearly resolved bands. Applying hydrostatic pressure, the whole emission band monotonously shifts towards higher photon energies with pressure coefficients ranging from 72 to 98 meV/GPa. In contrast to InAs quantum dots on GaAs, quantum wires photoluminescence is observed up to 10 GPa, indicating that InAs QWrs are metastable well above pressure at which bulk InAs undergoes a phase transition to the rock-salt phase (7 GPa). (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra

    Energy Technology Data Exchange (ETDEWEB)

    Surrente, A; Gallo, P; Felici, M; Dwir, B; Rudra, A; Kapon, E, E-mail: alessandro.surrente@epfl.c [Laboratory of Physics of Nanostructures, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2009-10-14

    Arrays of site-controlled, pyramidal InGaAs/GaAs quantum dots (QDs) grown by organo-metallic chemical vapour deposition with densities comparable to those of self-assembled QDs (5 x 10{sup 9} cm{sup -2}) are demonstrated. The QDs exhibit high quality photoluminescence spectra with inhomogeneous broadening of only 6.5 meV. The QD dipole moment was estimated through the analysis of time-resolved photoluminescence measurements. Such ordered QD arrays should be useful for applications in active nanophotonic systems such as QD lasers, modulators and switches requiring high overlap of the optical modes with the QD active region.

  2. Investigation on photoluminescence quenching of CdSe/ZnS quantum dots by organic charge transporting materials

    Directory of Open Access Journals (Sweden)

    Yuqiu Qu

    2015-12-01

    Full Text Available The effect of different organic charge transporting materials on the photoluminescence of CdSe/ZnS core/shell quantum dots has been studied by means of steady-state and time-resolved photoluminescence spectroscopy. With an increase in concentration of the organic charge transporting material in the quantum dots solutions, the photoluminescence intensity of CdSe/ZnS quantum dots was quenched greatly and the fluorescence lifetime was shortened gradually. The quenching efficiency of CdSe/ZnS core/shell quantum dots decreased with increasing the oxidation potential of organic charge transporting materials. Based on the analysis, two pathways in the photoluminescence quenching process have been defined: static quenching and dynamic quenching. The dynamic quenching is correlated with hole transporting from quantum dots to the charge transporting materials.

  3. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    Energy Technology Data Exchange (ETDEWEB)

    Alejo, T. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Paulo, Pedro M.R. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Merchán, M.D. [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain); Garcia-Fernandez, Emilio; Costa, Sílvia M.B. [Centro de Química Estrutural, Instituto Superior Técnico, Universidade Técnica de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa (Portugal); Velázquez, M.M., E-mail: mvsal@usal.es [Departamento de Química Física, Facultad de Ciencias Químicas, Universidad de Salamanca, E-37008 Salamanca (Spain)

    2017-03-15

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  4. Influence of 3D aggregation on the photoluminescence dynamics of CdSe quantum dot films

    International Nuclear Information System (INIS)

    Alejo, T.; Paulo, Pedro M.R.; Merchán, M.D.; Garcia-Fernandez, Emilio; Costa, Sílvia M.B.; Velázquez, M.M.

    2017-01-01

    Thin films of semiconductor CdSe quantum dots, QDs, directly deposited onto quartz as well as onto a Langmuir-Blodgett film of the Gemini surfactant ethyl-bis (dimethyl octadecyl ammonium bromide have been prepared and their photoluminescence properties were characterized by confocal fluorescence lifetime microscopy. 3D aggregates of QDs were observed in QD films directly deposited onto the solid while the Gemini surfactant film avoids the 3D aggregation. The photoluminescence decay analysis was performed by a phenomenological model previously proposed by us which considers that the luminescence dynamics is affected by energy transport and trapping processes and the relative contribution of these processes depends on film morphology. Thus, in the non-aggregated and more homogeneous QD films, QDs deposited onto the surfactant, the relative contribution of the energy transport process increases with trap concentration while 3D aggregation favors the energy transport even at low density of energy traps. - Highlights: • Photoluminescence dynamics of QDs films. • Photoluminescence response related to energy transport and trapping processes. • Dependence of photoluminescence dynamics on film morphology.

  5. Effect of shells on photoluminescence of aqueous CdTe quantum dots

    International Nuclear Information System (INIS)

    Yuan, Zhimin; Yang, Ping

    2013-01-01

    Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

  6. Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

    International Nuclear Information System (INIS)

    Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

    2014-01-01

    A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

  7. Growth and temperature dependent photoluminescence of InGaAs quantum dot chains

    International Nuclear Information System (INIS)

    Yang, Haeyeon; Kim, Dong-Jun; Colton, John S.; Park, Tyler; Meyer, David; Jones, Aaron M.; Thalman, Scott; Smith, Dallas; Clark, Ken; Brown, Steve

    2014-01-01

    Highlights: • We examine the optical properties of novel quantum dot chains. • Study shows that platelets evolve into quantum dots during heating of the InGaAs platelets encapsulated with GaAs. • Single stack of quantum dots emits light at room temperature. • Quantum dots are of high quality, confirmed by cross-section TEM images and photoluminescence. • Light emission at room temperature weakens beyond the detection limit when the quantum dots form above the critical annealing temperature. - Abstract: We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so that the resulting surfaces remain flat with platelets even though their thicknesses exceed the critical thickness of the conventional Stranski–Krastanov growth mode. The flat InGaAs layers were then annealed at elevated temperatures to induce the formation of quantum dot chains. A reflection high energy electron diffraction study suggests that, when the annealing temperature is at or below 480 °C, the surface of growth front remains flat during the periods of annealing and growth of a 10 nm thick GaAs capping layer. Surprisingly, transmission electron microscopy images do indicate the formation of quantum dot chains, however, so the dot-chains in those samples may form from precursory platelets during the period of temperature ramping and subsequent capping with GaAs due to intermixing of group III elements. The optical emission from the quantum dot layer demonstrates that there is a critical annealing temperature of 480–500 °C above which the properties of the low temperature growth approach are lost, as the optical properties begin to resemble those of quantum dots produced by the conventional Stranski–Krastanov technique

  8. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    International Nuclear Information System (INIS)

    Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

    2016-01-01

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  9. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    International Nuclear Information System (INIS)

    Isnaeni,; Yulianto, Nursidik; Suliyanti, Maria Margaretha

    2016-01-01

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  10. Photoluminescence of patterned CdSe quantum dot for anti-counterfeiting label on paper

    Energy Technology Data Exchange (ETDEWEB)

    Isnaeni,, E-mail: isnaeni@lipi.go.id; Yulianto, Nursidik; Suliyanti, Maria Margaretha [Research Center for Physics, Indonesian Institute of Sciences, Building 442, Kawasan Puspiptek, South Tangerang,Banten 15314 Indonesia (Indonesia)

    2016-03-11

    We successfully developed a method utilizing colloidal CdSe nanocrystalline quantum dot for anti-counterfeiting label on a piece of glossy paper. We deposited numbers and lines patterns of toluene soluble CdSe quantum dot using rubber stamper on a glossy paper. The width of line pattern was about 1-2 mm with 1-2 mm separation between lines. It required less than one minute for deposited CdSe quantum dot on glossy paper to dry and become invisible by naked eyes. However, patterned quantum dot become visible using long-pass filter glasses upon excitation of UV lamp or blue laser. We characterized photoluminescence of line patterns of quantum dot, and we found that emission boundaries of line patterns were clearly observed. The error of line size and shape were mainly due to defect of the original stamper. The emission peak wavelength of CdSe quantum dot was 629 nm. The emission spectrum of deposited quantum dot has full width at half maximum (FWHM) of 30-40 nm. The spectra similarity between deposited quantum dot and the original quantum dot in solution proved that our stamping method can be simply applied on glossy paper without changing basic optical property of the quantum dot. Further development of this technique is potential for anti-counterfeiting label on very important documents or objects.

  11. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    International Nuclear Information System (INIS)

    Donchev, V; Ivanov, T S; Borisov, K; Angelova, T; Cros, A; Cantarero, A; Fuster, D; Shtinkov, N; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  12. Surface photovoltage and photoluminescence spectroscopy of self-assembled InAs/InP quantum wires

    Science.gov (United States)

    Donchev, V.; Ivanov, T. S.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borisov, K.; Fuster, D.; González, Y.; González, L.

    2010-02-01

    The optical properties of InAs/InP multi-layer quantum wire (QWR) structures of various spacer thicknesses have been investigated by means of room temperature surface photovoltage and photoluminescence spectroscopy. Combined with empirical tight binding calculations, the spectra have revealed transitions assigned to QWR families with heights equal to integer number of 5, 6 and 7 monolayers. From the comparison of the experimental and theoretical results the atomic concentration of phosphorus in the wires has been estimated.

  13. Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

    Science.gov (United States)

    Ware, M. E.; Stinaff, E. A.; Gammon, D.; Doty, M. F.; Bracker, A. S.; Gershoni, D.; Korenev, V. L.; Bădescu, Ş. C.; Lyanda-Geller, Y.; Reinecke, T. L.

    2005-10-01

    We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge-tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wave functions through asymmetric e-e and e-h exchange interactions.

  14. Plasmon resonance-induced photoluminescence enhancement of CdTe/Cds quantum dots thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongyu [Nanjing University of Posts and Telecommunications, Nanjing 210003 (China); National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Xu, Ling, E-mail: xuling@nju.edu.cn [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wu, Yangqing; Xu, Jun; Ma, Zhongyuan; Chen, Kunji [National Laboratory of Solid State Microstructure and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2016-11-30

    Highlights: • CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated. • PL intensity of the quantum dots films was enhanced due to Au nanorods. • Internal quantum efficiency increased due to localized surface plasmon resonance. • The lifetimes of quantum dots films decreased after interaction with Au nano-rods. - Abstract: CdTe/CdS quantum dots/Au nano-rods nano-composite films were fabricated on planar Si substrates. The optical properties of all samples were investigated and the corresponding simulations were studied. It was found that the photoluminescence intensity of the CdTe/CdS quantum dots films was enhanced about 9-fold after the incorporation of Au nano-rods, the internal quantum efficiency increased from 24.3% to 35.2% due to the localized surface plasmon resonance. The time-resolved luminescence decay curves showed that the lifetimes of CdTe/CdS quantum dots films decreased to 2.8 ns after interaction with Au nano-rods. The results of finite-difference time-domain simulation indicated that Au nano-rods induced the localization of electric field, which enhanced the PL intensity of quantum dots films in the vicinity of Au nano-rods.

  15. Different approaches for sensing captopril based on functionalized graphene quantum dots as photoluminescent probe

    Energy Technology Data Exchange (ETDEWEB)

    Toloza, Carlos A.T.; Khan, Sarzamin; Silva, Renan L.D. [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Romani, Eric C.; Freire, F.L. [Department of Physics, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil); Aucélio, Ricardo Q., E-mail: aucelior@puc-rio.br [Department of Chemistry, Pontifical Catholic University of Rio de Janeiro (PUC-Rio), Rio de Janeiro 22451-900 (Brazil)

    2016-11-15

    The determination of captopril is proposed using graphene quantum dots produced by the pyrolysis of citric acid and glutathione (GSH-GQDs). Captopril induces both quenching and spectral red-shifting in the photoluminescence from aqueous dispersions of GSH-GQDs. By employing Fe{sup 3+} as mediator (that enables signal quenching of GSH-GQDs), the presence of captopril restored the photoluminescence of quantum dots. Under optimized experimental conditions, the signal quenching from the GSH-GQDs as function of the concentration of captopril showed a linear response range covering three orders of magnitude (10{sup −6} to 10{sup −4} mol L{sup −1}). The proposed approaches were tested by determining captopril in simulated samples and in commercial pharmaceutical formulations. The measurement of either the spectral shifting observed of the GSH-GQDs probe or the photoluminescence switch on/off using GQDs-GSH-Fe{sup 3+} resulted in satisfactory recoveries of captopril, showing the quantitative sensing potential.

  16. Dewetting-Induced Photoluminescent Enhancement of Poly(lauryl methacrylate)/Quantum Dot Thin Films.

    Science.gov (United States)

    Geldmeier, Jeffrey; Rile, Lexy; Yoon, Young Jun; Jung, Jaehan; Lin, Zhiqun; Tsukruk, Vladimir V

    2017-12-19

    A new method for enhancing photoluminescence from quantum dot (QD)/polymer nanocomposite films is proposed. Poly(lauryl methacrylate) (PLMA) thin films containing embedded QDs are intentionally allowed to undergo dewetting on substrates by exposure to a nonsolvent vapor. After controlled dewetting, films exhibited typical dewetting morphologies with increased amounts of scattering that served to outcouple photoluminescence from the film and reduce internal light propagation within the film. Up to a 5-fold enhancement of the film emission was achieved depending on material factors such as the initial film thickness and QD concentration within the film. An increase in initial film thickness was shown to increase the dewetted maximum feature size and its characteristic length until a critical thickness was reached where dewetting became inhibited. A unique light exposure-based photopatterning method is also presented for the creation of high contrast emissive patterns as guided by spatially controlled dewetting.

  17. Near-unity photoluminescence quantum yield in MoS.sub.2

    Science.gov (United States)

    Amani, Matin; Lien, Der-Hsien; Kiriya, Daisuke; Bullock, James; Javey, Ali

    2017-12-26

    Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS.sub.2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS.sub.2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8.+-.0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

  18. Magnetic enhancement of photoluminescence from blue-luminescent graphene quantum dots

    Science.gov (United States)

    Chen, Qi; Shi, Chentian; Zhang, Chunfeng; Pu, Songyang; Wang, Rui; Wu, Xuewei; Wang, Xiaoyong; Xue, Fei; Pan, Dengyu; Xiao, Min

    2016-02-01

    Graphene quantum-dots (GQDs) have been predicted and demonstrated with fascinating optical and magnetic properties. However, the magnetic effect on the optical properties remains experimentally unexplored. Here, we conduct a magneto-photoluminescence study on the blue-luminescence GQDs at cryogenic temperatures with magnetic field up to 10 T. When the magnetic field is applied, a remarkable enhancement of photoluminescence emission has been observed together with an insignificant change in circular polarization. The results have been well explained by the scenario of magnetic-field-controlled singlet-triplet mixing in GQDs owing to the Zeeman splitting of triplet states, which is further verified by temperature-dependent experiments. This work uncovers the pivotal role of intersystem crossing in GQDs, which is instrumental for their potential applications such as light-emitting diodes, photodynamic therapy, and spintronic devices.

  19. Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

    DEFF Research Database (Denmark)

    Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

    1995-01-01

    The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

  20. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

    2017-08-31

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  1. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    International Nuclear Information System (INIS)

    Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

    2017-01-01

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  2. Photoluminescence and magnetophotoluminescence studies in GaInNAs/GaAs quantum wells

    Science.gov (United States)

    Segura, J.; Garro, N.; Cantarero, A.; Miguel-Sánchez, J.; Guzmán, A.; Hierro, A.

    2007-04-01

    We investigate the effects of electron and hole localization in the emission of a GaInNAs/GaAs single quantum well at low temperatures. Photoluminescence measurements varying the excitation density and under magnetic fields up to 14 T have been carried out. The results indicate that electrons are strongly localized in these systems due to small fluctuations in the nitrogen content of the quaternary alloy. The low linear diamagnetic shift of the emission points out the weakness of the Coulomb correlation between electrons and holes and suggests an additional partial localization of the holes.

  3. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Takabayashi, K.; Kamiya, I. [Quantum Interface Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan); Sukrittanon, S. [Material Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Pan, J. L.; Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-10-27

    Self-assembled dilute nitride InNP quantum dots (QDs) in GaP matrix grown under the Stranski-Krastanov mode by gas-source molecular beam epitaxy are studied. The N-related localized states inside the InNP QDs provide a spatially direct recombination channel, in contrast to the spatially indirect channel through the strained In(N)P QDs/GaP interface states. The N incorporation into InP QDs therefore causes a blueshift and double-peak features in photoluminescence, which are not observed in other dilute nitride materials.

  4. Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

    2002-01-01

    The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

  5. Absolute quantum yield measurements for the formation of oxygen ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. The dynamics of formation of oxygen atoms after UV photoexcitation of .... The SO2 pressure in the cell was typically 30–55 mTorr (monitored by an MKS .... With this value the quantum yield for O(3P) formation could be calculated to.

  6. On quantum harmonic oscillator being subjected to absolute

    Indian Academy of Sciences (India)

    In a quantum harmonic oscillator (QHO), the energy of the oscillator increases with increased frequency. In this paper, assuming a boundary condition that the product of momentum and position, or the product of energy density and position remains constant in the QHO, it is established that a particle subjected to increasing ...

  7. Green and fast synthesis of amino-functionalized graphene quantum dots with deep blue photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Blanco, E., E-mail: eduardo.blanco@uca.es; Blanco, G.; Gonzalez-Leal, J. M.; Barrera, M. C.; Domínguez, M.; Ramirez-del-Solar, M. [University of Cádiz, Institute of Electron Microscopy and Materials (Spain)

    2015-05-15

    Graphene quantum dots (GQDs) were prepared using a top-down approach with a green microwave-assisted hydrothermal synthesis from ultrathin graphite, previously ultrasound delaminated. Results obtained by transmission electron microscopy and atomic force microscopy indicate that the so-fabricated GQDs are plates with 6 nm of average diameter, mostly single- or bi-layered. Photoluminescence characterization shows that the strongest emission occurs at 410–415 nm wavelength when the samples are excited at 310–320 nm wavelength. In addition to these down-conversion features, GQDs also exhibit up-conversion photoluminescence when excited in the range 560–800 nm wavelength, with broad emission peaks at 410–450 nm wavelength. Analysis of X-ray photoelectron spectroscopy measurements indicates a higher proportion of C–C sp{sup 2} than sp{sup 3} bonds, with the sp{sup 3} ones mainly located at the GQD surfaces. Also evidences of C–O and C–N bonds at the GQD surface have been observed. The combination of these results with Raman and ultraviolet–visible absorption experiments allows envisaging the GQDs to be composed of amino-functionalized sp{sup 2} islands with a high degree of surface oxidation. This would explain the photoluminescent properties observed in the samples under study. The combined up- and down-conversion photoluminescence processes would made these GQDs a powerful energy-transfer component in GQDs–TiO{sub 2} nanocomposite systems, which could be used in photocatalyst devices with superior performance compared to simple TiO{sub 2} systems.

  8. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

    Science.gov (United States)

    Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

    2012-07-11

    Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

  9. Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

    Science.gov (United States)

    Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

    2013-01-08

    Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

  10. Tuning the Photoluminescence of Graphene Quantum Dots by Photochemical Doping with Nitrogen

    Directory of Open Access Journals (Sweden)

    Xiaofen Xu

    2017-11-01

    Full Text Available Nitrogen-doped graphene quantum dots (NGQDs were synthesized by irradiating graphene quantum dots (GQDs in an NH3 atmosphere. The photoluminescence (PL properties of the GQDs and the NGQDs samples were investigated. Compared with GQDs, a clear PL blue-shift of NGQDs could be achieved by regulating the irradiating time. The NGQDs obtained by irradiation of GQDs for 70 min had a high N content of 15.34 at % and a PL blue-shift of about 47 nm. This may be due to the fact that photochemical doping of GQDs with nitrogen can significantly enhance the contents of pyridine-like nitrogen, and also effectively decrease the contents of oxygen functional groups of NGQDs, thus leading to the observed obvious PL blue-shift.

  11. Temperature-dependent photoluminescence study of InP/ZnS quantum dots

    Science.gov (United States)

    Thuy Pham, Thi; Tran, Thi Kim Chi; Liem Nguyen, Quang

    2011-06-01

    This paper reports on the temperature-dependent photoluminescence of InP/ZnS quantum dots under 532 nm excitation, which is above the InP transition energy but well below that of ZnS. The overall photoluminescence spectra show two spectral components. The higher-energy one (named X) is assigned to originate from the excitonic transition; while the low-energy spectral component (named I) is normally interpreted as resulting from lattice imperfections in the crystalline structure of InP/ZnS quantum dots (QDs). Peak positions of both the X and I emissions vary similarly with increasing temperature and the same as the InP bandgap narrowing with temperature. In the temperature range from 15 to 80 K, the ratio of the integrated intensity from the X and the I emissions decreases gradually and then this ratio increases fast at temperatures higher than 80 K. This could result from a population of charge carriers in the lattice imperfection states at a temperature below 80 K to increase the I emission but then with these charge carriers being released to contribute to the X emission.

  12. Photoluminescence Enhancement of Silole-Capped Silicon Quantum Dots Based on Förster Resonance Energy Transfer.

    Science.gov (United States)

    Kim, Seongwoong; Kim, Sungsoo; Ko, Young Chun; Sohn, Honglae

    2015-07-01

    Photoluminescent porous silicon were prepared by an electrochemical etch of n-type silicon under the illumination with a 300 W tungsten filament bulb for the duration of etch. The red photoluminescence emitting at 650 nm with an excitation wavelength of 450 nm is due to the quantum confinement of silicon quantum dots in porous silicon. HO-terminated red luminescent PS was obtained by an electrochemical treatment of fresh PS with the current of 150 mA for 60 seconds in water and sodium chloride. As-prepared PS was sonicated, fractured, and centrifuged in toluene solution to obtain photoluminescence silicon quantum dots. Dichlorotetraphenylsilole exhibiting an emission band at 520 nm was reacted with HO-terminated silicon quantum dots to give a silole-capped silicon quantum dots. The optical characterization of silole-derivatized silicon quantum dots was investigated by UV-vis and fluorescence spectrometer. The fluorescence emission efficiency of silole-capped silicon quantum dots was increased by about 2.5 times due to F6rster resonance energy transfer from silole moiety to silicon quantum dots.

  13. Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

    Energy Technology Data Exchange (ETDEWEB)

    Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2016-01-15

    The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

  14. Chemically modulated graphene quantum dot for tuning the photoluminescence as novel sensory probe

    Science.gov (United States)

    Hwang, Eunhee; Hwang, Hee Min; Shin, Yonghun; Yoon, Yeoheung; Lee, Hanleem; Yang, Junghee; Bak, Sora; Lee, Hyoyoung

    2016-12-01

    A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providing new HFHPB-GQD material. With a help of the electron withdrawing HFHPB group, the energy band gap of the HFHPB-GQD was widened and its PL decay life time decreased. As designed, after addition of dimethyl methyl phosphonate (DMMP), the PL intensity of HFHPB-GQD sensor sharply increased up to approximately 200% through a hydrogen bond with DMMP. The fast response and short recovery time was proven by quartz crystal microbalance (QCM) analysis. This HFHPB-GQD sensor shows highly sensitive to DMMP in comparison with GQD sensor without HFHPB and graphene. In addition, the HFHPB-GQD sensor showed high selectivity only to the phosphonate functional group among many other analytes and also stable enough for real device applications. Thus, the tuning of the band gap of the photoluminescent GQDs may open up new promising strategies for the molecular detection of target substrates.

  15. Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

    Energy Technology Data Exchange (ETDEWEB)

    Herrera, H.; Calderon, A. [CICATA-IPN, Av. Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico); Gonzalez de la Cruz, G. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico)

    2006-07-01

    Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al{sub x}Ga{sub 1-x}N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

  16. Photoluminescence spectrum changes of GaN quantum wells caused by the strong piezoelectric fields

    International Nuclear Information System (INIS)

    Herrera, H.; Calderon, A.; Gonzalez de la Cruz, G.

    2006-01-01

    Spontaneous and piezoelectric fields are known to be the key to understanding the optical properties of nitride heterostructures. This effect modifies the electronic states in the quantum well (QW) and the emission energy in the photoluminescence (PL) spectrum. These fields induce a reduction of the oscillator strength on the transition energy between the confined electron and hole states in GaN/Al x Ga 1-x N QW's and dramatically increase the carrier life time as the QW thickness increases. In this work, we solve analytically the Schroedinger equation for moderate electric fields when the electron-hole transition energy in the QW is larger than the energy gap of the GaN. Furthermore, the large redshifts of the PL energy position and the spatial separation of the electron and hole by several times of the Bohr radius caused by the strong piezoelectric fields are explained using a triangular potential in the Schrodinger equation. The transition energy calculations between the electron-hole pair as a function of the well width with the electric field as a fitting parameter are in agreement with the measured photoluminescence energy peaks. (Author)

  17. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

    2016-04-11

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  18. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  19. Near-unity photoluminescence quantum yield in MoS2

    KAUST Repository

    Amani, Matin; Lien, Der Hsien; Kiriya, Daisuke; Xiao, Jun; Azcatl, Angelica; Noh, Jiyoung; Madhvapathy, Surabhi R.; Addou, Rafik; Santosh, K. C.; Dubey, Madan; Cho, Kyeongjae; Wallace, Robert M.; Lee, Si Chen; He, Jr-Hau; Ager, Joel W.; Zhang, Xiang; Yablonovitch, Eli; Javey, Ali

    2015-01-01

    Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

  20. Near-unity photoluminescence quantum yield in MoS2

    KAUST Repository

    Amani, Matin

    2015-11-26

    Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low.The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QYof 0.6%, which indicates a considerable defect density. Herewe report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude.The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a finalQYofmore than 95%, with a longest-observed lifetime of 10.8 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

  1. Interface and photoluminescence characteristics of graphene-(GaN/InGaN){sub n} multiple quantum wells hybrid structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Liancheng, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Engineering Product Development Pillar (EPD), Singapore University of Technology & Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Mind Star (Beijing) Technology Co., Ltd., Zhongguancun South Street, Haidian District, No. 45 Hing Fat Building 1001, Beijing 100872 (China); Liu, Zhiqiang, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn; Tian, Ying Dong; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin; Wang, Guohong [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Zi-Hui, E-mail: wanglc@semi.ac.cn, E-mail: lzq@semi.ac.cn, E-mail: zh.zhang@hebut.edu.cn [Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401 (China)

    2016-04-14

    The effects of graphene on the optical properties of active system, e.g., the InGaN/GaN multiple quantum wells, are thoroughly investigated and clarified. Here, we have investigated the mechanisms accounting for the photoluminescence reduction for the graphene covered GaN/InGaN multiple quantum wells hybrid structure. Compared to the bare multiple quantum wells, the photoluminescence intensity of graphene covered multiple quantum wells showed a 39% decrease after excluding the graphene absorption losses. The responsible mechanisms have been identified with the following factors: (1) the graphene two dimensional hole gas intensifies the polarization field in multiple quantum wells, thus steepening the quantum well band profile and causing hole-electron pairs to further separate; (2) a lower affinity of graphene compared to air leading to a weaker capability to confine the excited hot electrons in multiple quantum wells; and (3) exciton transfer through non-radiative energy transfer process. These factors are theoretically analysed based on advanced physical models of semiconductor devices calculations and experimentally verified by varying structural parameters, such as the indium fraction in multiple quantum wells and the thickness of the last GaN quantum barrier spacer layer.

  2. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites.

    Science.gov (United States)

    Sutter-Fella, Carolin M; Li, Yanbo; Amani, Matin; Ager, Joel W; Toma, Francesca M; Yablonovitch, Eli; Sharp, Ian D; Javey, Ali

    2016-01-13

    Hybrid organic-inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low-cost solution processability. Here, we present a two-step low-pressure vapor-assisted solution process to grow high quality homogeneous CH3NH3PbI3-xBrx perovskite films over the full band gap range of 1.6-2.3 eV. Photoluminescence light-in versus light-out characterization techniques are used to provide new insights into the optoelectronic properties of Br-containing hybrid organic-inorganic perovskites as a function of optical carrier injection by employing pump-powers over a 6 orders of magnitude dynamic range. The internal luminescence quantum yield of wide band gap perovskites reaches impressive values up to 30%. This high quantum yield translates into substantial quasi-Fermi level splitting and high "luminescence or optically implied" open-circuit voltage. Most importantly, both attributes, high internal quantum yield and high optically implied open-circuit voltage, are demonstrated over the entire band gap range (1.6 eV ≤ Eg ≤ 2.3 eV). These results establish the versatility of Br-containing perovskite semiconductors for a variety of applications and especially for the use as high-quality top cell in tandem photovoltaic devices in combination with industry dominant Si bottom cells.

  3. Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

    Directory of Open Access Journals (Sweden)

    Lin Chien-Hung

    2011-01-01

    Full Text Available Abstract In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states on photoluminescence excitation (PLE spectra of InAs quantum dots (QDs was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.

  4. Photoluminescence of a single InAs/AlAs quantum dot

    International Nuclear Information System (INIS)

    Shamirzaev, T.S.; Zhuravlev, K.S.; Larsson, M.; Holtz, P.O.

    2008-01-01

    Micro-photoluminescence (μ-PL) of a simple InAs/AlAs quantum dot (QD) has been studied. It has been found that the μ-PL emission related to the recombination in a single QD is strongly broadened probably due to spectral diffusion. Emissions related to the recombination of biexcitons and excitons occupying excited levels of the QD are observed in μ-PL spectra at high excitation power densities. A red shift of the μ-PL emissions related to recombination of excitons in the ground and excited levels of the QD with increasing excitation power gives clear evidence for type I alignment of the InAs/AlAs QD. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Tunable photoluminescence of CsPbBr3 perovskite quantum dots for light emitting diodes application

    Science.gov (United States)

    Chen, Weiwei; Xin, Xing; Zang, Zhigang; Tang, Xiaosheng; Li, Cunlong; Hu, Wei; Zhou, Miao; Du, Juan

    2017-11-01

    All-inorganic cesium lead halide (CsPbBr3) perovskite quantum dots (QDs), as one kind of promising materials, have attracted considerable attention in optoelectronic applications. Herein, we synthesized the colloidal CsPbBr3 QDs with tunable photoluminescence (PL) (493-531 nm) by adjusting the reaction temperatures, which revealed narrow emission bandwidths of about 25 nm. The average diameters of the QDs could be adjusted from 7.1 to 12.3 nm as the temperature increased from 100 °C to 180 °C. Moreover, the radiative lifetimes of CsPbBr3 QDs were measured to be 2 ns, and the single QD fluorescence intensity time trace results demonstrated its suppressed blinking emission. Moreover, green light emitting diodes by using CsPbBr3 QDs casted on blue LED chips were further fabricated, which provided potential applications in the field of display and lighting technology.

  6. On determining absolute entropy without quantum theory or the third law of thermodynamics

    Science.gov (United States)

    Steane, Andrew M.

    2016-04-01

    We employ classical thermodynamics to gain information about absolute entropy, without recourse to statistical methods, quantum mechanics or the third law of thermodynamics. The Gibbs-Duhem equation yields various simple methods to determine the absolute entropy of a fluid. We also study the entropy of an ideal gas and the ionization of a plasma in thermal equilibrium. A single measurement of the degree of ionization can be used to determine an unknown constant in the entropy equation, and thus determine the absolute entropy of a gas. It follows from all these examples that the value of entropy at absolute zero temperature does not need to be assigned by postulate, but can be deduced empirically.

  7. On the acceptor-related photoluminescence spectra of GaAs quantum-wire microcrystals: A model calculation

    International Nuclear Information System (INIS)

    Oliveira, L.E.; Porras Montenegro, N.; Latge, A.

    1992-07-01

    The acceptor-related photoluminescence spectrum of a GaAs quantum-wire microcrystal is theoretically investigated via a model calculation within the effective-mass approximation, with the acceptor envelope wave functions and binding energies calculated through a variational procedure. Typical theoretical photoluminescence spectra show two peaks associated to transitions from the n = 1 conduction subband electron gas to acceptors at the on-center and on-edge positions in the wire in good agreement with the recent experimental results by Hirum et al. (Appl. Phys. Lett. 59, 431 (1991)). (author). 14 refs, 3 figs

  8. Assignment of absolute stereostructures through quantum mechanics electronic and vibrational circular dichroism calculations.

    Science.gov (United States)

    Dai, Peng; Jiang, Nan; Tan, Ren-Xiang

    2016-01-01

    Elucidation of absolute configuration of chiral molecules including structurally complex natural products remains a challenging problem in organic chemistry. A reliable method for assigning the absolute stereostructure is to combine the experimental circular dichroism (CD) techniques such as electronic and vibrational CD (ECD and VCD), with quantum mechanics (QM) ECD and VCD calculations. The traditional QM methods as well as their continuing developments make them more applicable with accuracy. Taking some chiral natural products with diverse conformations as examples, this review describes the basic concepts and new developments of QM approaches for ECD and VCD calculations in solution and solid states.

  9. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  10. Current measurement system utilizing cryogenic techniques for the absolute measurement of the magnetic flux quantum

    International Nuclear Information System (INIS)

    Endo, T.; Murayama, Y.; Sakamoto, Y.; Sakuraba, T.; Shiota, F.

    1989-01-01

    A series of systems composed of cryogenic devices such as a Josephson potentiometer and a cryogenic current comparator has been proposed and developed to precisely measure a current with any value up to 1 A. These systems will be used to measure the injected electrical energy with an uncertainty of the order of 0.01 ppm or less in the absolute measurement of the magnetic flux quantum by superconducting magnetic levitation. Some preliminary experiments are described

  11. Classical and quantum dynamics of a gravitational theory with absolute teleparallelism

    International Nuclear Information System (INIS)

    Azeredo Campos, R. de.

    1984-01-01

    The dynamics of an alternative theory of gravitation with absolute teleparallelism is sustied. In the Cauchy problem of this theory four constraint relations are obtained, as in general relativity, because of the existence of the manifold mapping group. Propagation equations for the dynamical variables are also derived by applying Dirac's Hamiltonian methods. In addition, an algebra of generators related to the global Lorentz group and the correspondence principle leading to a quantum version of the theory are also discussed. (author) [pt

  12. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2014-01-01

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs

  13. Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots

    Science.gov (United States)

    Maliya; Aierken, Abuduwayiti; Li, Yudong; Zhou, Dong; Zhao, Xiaofan; Guo, Qi; Liu, Chaoming

    2018-03-01

    We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.

  14. Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

    International Nuclear Information System (INIS)

    Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R; Gunnaes, A E

    2008-01-01

    A study of the photoluminescence from a four-period Cd x Hg 1-x Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm 2 . When the excitation density was increased from 1.3 to 23.4 W/cm 2 , the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV

  15. Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs

    Directory of Open Access Journals (Sweden)

    Yufeng Li

    2017-11-01

    Full Text Available Ag coated microgroove with extreme large aspect-ratio of 500:1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed.

  16. Bounds on absolutely maximally entangled states from shadow inequalities, and the quantum MacWilliams identity

    Science.gov (United States)

    Huber, Felix; Eltschka, Christopher; Siewert, Jens; Gühne, Otfried

    2018-04-01

    A pure multipartite quantum state is called absolutely maximally entangled (AME), if all reductions obtained by tracing out at least half of its parties are maximally mixed. Maximal entanglement is then present across every bipartition. The existence of such states is in many cases unclear. With the help of the weight enumerator machinery known from quantum error correction and the shadow inequalities, we obtain new bounds on the existence of AME states in dimensions larger than two. To complete the treatment on the weight enumerator machinery, the quantum MacWilliams identity is derived in the Bloch representation. Finally, we consider AME states whose subsystems have different local dimensions, and present an example for a 2×3×3×3 system that shows maximal entanglement across every bipartition.

  17. Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

    International Nuclear Information System (INIS)

    Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

  18. Photoluminescence of ZnS: Mn quantum dot by hydrothermal method

    Directory of Open Access Journals (Sweden)

    Yun Hu

    2018-01-01

    Full Text Available ZnS: Mn quantum dots (QDs with the average grain size from 4.2 to 7.2 nm were synthesized by a hydrothermal method. All samples were cubic zinc blende structure (β-ZnS measured using X-ray diffraction (XRD. And the main diffraction peaks of ZnS: Mn shifted slightly towards higher angle in comparison with the intrinsic ZnS because of the substitution of Mn2+ for Zn2+. Due to the small grain size (4-7 nm effect, the poor dispersion and serious reunion phenomenon for the samples were observed from transmission electron microscopy (TEM. ZnS: Mn QDs had four peaks centered at 466, 495, 522, and 554 nm, respectively, in the photoluminescence (PL spectra, in which the band at 554 nm absent in the intrinsic ZnS: Mn is attributed to the doping of Mn2+ in the lattice sites. As the concentration of Mn2+ increasing from 0% to 0.6 at%, the intensity of the PL emission also increased. But the concentration reached 0.9 at%, quenching of PL emission occurred. The peak in ZnS: Mn QDs observed at 490 cm-1 was originated from the stretching vibration of the Mn–O bonds in the Fourier transform infrared (FTIR spectra. And the small changes about this peak compared with the previous reports at 500 cm-1 can be attributed to the formation of quantum dots. This method we utilized to synthesize ZnS: Mn QDs is very simple, low cost, and applicable for other semiconductor QD materials.

  19. Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S. [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [School of Material Science and Nanotechnology Jadavpur University, Kolkata 700032 (India); Thin Film and NanoScience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2016-10-15

    In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

  20. Size dependent photoluminescence property of hydrothermally synthesized crystalline carbon quantum dots

    International Nuclear Information System (INIS)

    Sarkar, S.; Banerjee, D.; Ghorai, U.K.; Das, N.S.; Chattopadhyay, K.K.

    2016-01-01

    In this work, simple hydrothermal synthesis of water soluble Carbon quantum dots (CQDs) of different sizes has been reported. The effect of synthesis temperature and synthesis time on the particle size has also been shown. The structures of all the as-prepared samples were studied by field emission scanning electron microscope and high resolution transmission electron microscope. Fourier transformed infrared spectrophotometer analyzes the different bonding present in the sample whereas Raman spectrophotometer quantifies the hybridization state of the prepared samples. UV–vis spectrophotometer gives the variation of absorbance of all the samples with wavelength. Dynamic light scattering study shows the variation of particle size with deposition condition and corresponding zeta potential gives the idea about the stability of the CQD solutions. The photoluminescence (PL) properties of the as prepared CQDs were also studied in detail. It is noticed that with the increase of excitation wavelength, the PL emissions for the different samples were red shifted. The results have been explained in terms of the excitation dependent emission, variations in size of the CQD and presence of different functional groups on the surface of CQDs.

  1. Polarization-dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Wernicke, Tim; Weyers, Markus [FBH, Berlin (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

    2010-07-01

    Light emitted from optical devices based on semi- and nonpolar GaN quantum well (QW) structures is partially or totally polarized, as a consequence of crystal symmetry and band structure. This can be an additional advantage over polar (0001)GaN in specific applications, e.g. in LED backlighting. Fundamentally, the polarized emission stems from breaking the isotropic symmetry of the hexagonal c-plane, resulting in two discrete semi- and nonpolar directions (parallel and normal to the projection of (0001)). We use the k.p method to simulate the crystal-direction dependent emission. The resulting transition matrix elements assign a specific (partial) polarization for each subband. The thermal occupation of the subbands results in a temperature dependent effective polarization of the light emission. We study MOVPE grown homoepitactical polar, semi- and nonpolar samples, measuring the polarization properties of the resonantly excited photoluminescence from the QW. With the complete polarization of the subbands for nonpolar devices it is possible to measure the energetic difference of the first two valence band levels. In contrast to our calculations we find a higher degree of polarization also in semipolar directions. A possible explanation could be a higher energetic subband difference than computed.

  2. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    International Nuclear Information System (INIS)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

    2014-01-01

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  3. Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots.

    Science.gov (United States)

    Lee, TaeGi; Shimura, Kunio; Kim, DaeGwi

    2018-05-03

    We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

  4. Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

    Science.gov (United States)

    Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

    2017-07-24

    We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

  5. Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

    Energy Technology Data Exchange (ETDEWEB)

    Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

    2010-04-15

    A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

  6. The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, Toshiaki [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan); Alfieri, Giovanni; Kawakami, Yoichi [Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510 (Japan); Micheletto, Ruggero, E-mail: ruggero@yokohama-cu.ac.jp [Department of Nanosystem Sciences, Yokohama City University, Yokohama 236-0027 (Japan)

    2017-01-15

    Highlights: • Photoluminescence of InGaN device is variable, there is no clear explanation for this. • We perform an ad-hoc absorption procedure, found that gases on the surface reduce emission. • We found that variability is related to the pressure of the gas in which the sample is immersed. • We point out the role of oxygen as major player in the reduction of photoluminescence. • A model is proposed and explains successfully the dynamical optical processes observed. - Abstract: We show for the first time that photoluminescence of InGaN single quantum wells (SQW) devices is related to the gas pressure in which the sample is immersed, also we give a model of the phenomena to suggest a possible cause. Our model shows a direct relation between experimental behavior and molecular coverage dynamics. This strongly suggests that the driving force of photoluminescence decrease is oxygen covering the surface of the device with a time dynamics that depends on the gas pressure. This aims to contribute to the understanding of the physical mechanism of the so-called optical memory effect and blinking phenomenon observed in these devices.

  7. Integrated smartphone imaging of quantum dot photoluminescence and Förster resonance energy transfer

    Science.gov (United States)

    Petryayeva, Eleonora; Algar, W. Russ

    2015-06-01

    Smartphones and other mobile devices are emerging as promising analytical platforms for point-of-care diagnostics, particularly when combined with nanotechnology. For example, we have shown that the optical properties of semiconductor quantum dots (QDs) are well suited to photoluminescence (PL) detection with a smartphone camera. However, this previous work has utilized an external excitation source for interrogation of QD PL. In this proceeding, we demonstrate that the white-light LED photographic flashes built into smartphones can be optically filtered to yield blue light suitable for excitation of QD PL. Measurements were made by recording video with filtered flash illumination and averaging the frames of the video to obtain images with good signal-to-background ratios. These images permitted detection of green-emitting and red-emitting QDs at levels comparable to those possible with excitation using an external long-wave UV lamp. The optical properties of QDs proved to be uniquely suited to smartphone PL imaging, exhibiting emission that was 1-2 orders magnitude brighter than that of common fluorescent dyes under the same conditions. Excitation with the smartphone flash was also suitable for imaging of FRET between green-emitting QD donors and Alexa Fluor 555 (A555) fluorescent dye acceptors. No significant difference in FRET imaging capability was observed between excitation with the smartphone flash and a long-wave UV lamp. Although the smartphone flash did have some disadvantages compared to an external UV lamp, these disadvantages are potentially offset by the benefit of having excitation and detection integrated into the smartphone.

  8. A label-free silicon quantum dots-based photoluminescence sensor for ultrasensitive detection of pesticides.

    Science.gov (United States)

    Yi, Yinhui; Zhu, Gangbing; Liu, Chang; Huang, Yan; Zhang, Youyu; Li, Haitao; Zhao, Jiangna; Yao, Shouzhuo

    2013-12-03

    Sensitive, rapid, and simple detection methods for the screening of extensively used organophosphorus pesticides and highly toxic nerve agents are in urgent demand. A novel label-free silicon quantum dots (SiQDs)-based sensor was designed for ultrasensitive detection of pesticides. This sensing strategy involves the reaction of acetylcholine chloride (ACh) with acetylcholinesterase (AChE) to form choline that is in turn catalytically oxidized by choline oxidase (ChOx) to produce betaine and H2O2 which can quench the photoluminescence (PL) of SiQDs. Upon the addition of pesticides, the activity of AChE is inhibited, leading to the decrease of the generated H2O2, and hence the PL of SiQDs increases. By measuring the increase in SiQDs PL, the inhibition efficiency of pesticide to AChE activity was evaluated. It was found that the inhibition efficiency was linearly dependent on the logarithm of the pesticides concentration. Consequently, pesticides, such as carbaryl, parathion, diazinon, and phorate, were determined with the SiQDs PL sensing method. The lowest detectable concentrations for carbaryl, parathion, diazinon, and phorate reached 7.25 × 10(-9), 3.25 × 10(-8), 6.76 × 10(-8), and 1.9 × 10(-7) g/L, respectively, which were much lower than those previously reported. The detecting results of pesticide residues in food samples via this method agree well with those from high-performance liquid chromatography. The simple strategy reported here should be suitable for on-site pesticides detection, especially in combination with other portable platforms.

  9. Photoluminescence and structural properties of CdSe quantum dot–gelatin composite films

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Kladko, V. [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevskaya, A. [L. Pysarzhevsky Institute of Physical Chemistry of NAS of Ukraine, Pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T. [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2014-11-15

    Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140–160 °C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100–160 °C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100–160 °C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 °C can be used for enhancement of the QD-related PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface.

  10. High Photoluminescence Quantum Yields in Organic Semiconductor-Perovskite Composite Thin Films.

    Science.gov (United States)

    Longo, Giulia; La-Placa, Maria-Grazia; Sessolo, Michele; Bolink, Henk J

    2017-10-09

    One of the obstacles towards efficient radiative recombination in hybrid perovskites is a low exciton binding energy, typically in the orders of tens of meV. It has been shown that the use of electron-donor additives can lead to a substantial reduction of the non-radiative recombination in perovskite films. Herein, the approach using small molecules with semiconducting properties, which are candidates to be implemented in future optoelectronic devices, is presented. In particular, highly luminescent perovskite-organic semiconductor composite thin films have been developed, which can be processed from solution in a simple coating step. By tuning the relative concentration of methylammonium lead bromide (MAPbBr 3 ) and 9,9spirobifluoren-2-yl-diphenyl-phosphine oxide (SPPO1), it is possible to achieve photoluminescent quantum yields (PLQYs) as high as 85 %. This is attributed to the dual functions of SPPO1 that limit the grain growth while passivating the perovskite surface. The electroluminescence of these materials was investigated by fabricating multilayer LEDs, where charge injection and transport was found to be severely hindered for the perovskite/SPPO1 material. This was alleviated by partially substituting SPPO1 with a hole-transporting material, 1,3-bis(N-carbazolyl)benzene (mCP), leading to bright electroluminescence. The potential of combining perovskite and organic semiconductors to prepare materials with improved properties opens new avenues for the preparation of simple lightemitting devices using perovskites as the emitter. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Photoluminescence spectra of n-doped double quantum wells in a parallel magnetic field

    International Nuclear Information System (INIS)

    Huang, D.; Lyo, S.K.

    1999-01-01

    We show that the photoluminescence (PL) line shapes from tunnel-split ground sublevels of n-doped thin double quantum wells (DQW close-quote s) are sensitively modulated by an in-plane magnetic field B parallel at low temperatures (T). The modulation is caused by the B parallel -induced distortion of the electronic structure. The latter arises from the relative shift of the energy-dispersion parabolas of the two quantum wells (QW close-quote s) in rvec k space, both in the conduction and valence bands, and formation of an anticrossing gap in the conduction band. Using a self-consistent density-functional theory, the PL spectra and the band-gap narrowing are calculated as a function of B parallel , T, and the homogeneous linewidths. The PL spectra from symmetric and asymmetric DQW close-quote s are found to show strikingly different behavior. In symmetric DQW close-quote s with a high density of electrons, two PL peaks are obtained at B parallel =0, representing the interband transitions between the pair of the upper (i.e., antisymmetric) levels and that of the lower (i.e., symmetric) levels of the ground doublets. As B parallel increases, the upper PL peak develops an N-type kink, namely a maximum followed by a minimum, and merges with the lower peak, which rises monotonically as a function of B parallel due to the diamagnetic energy. When the electron density is low, however, only a single PL peak, arising from the transitions between the lower levels, is obtained. In asymmetric DQW close-quote s, the PL spectra show mainly one dominant peak at all B parallel close-quote s. In this case, the holes are localized in one of the QW close-quote s at low T and recombine only with the electrons in the same QW. At high electron densities, the upper PL peak shows an N-type kink like in symmetric DQW close-quote s. However, the lower peak is absent at low B parallel close-quote s because it arises from the inter-QW transitions. Reasonable agreement is obtained with recent

  12. The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

    International Nuclear Information System (INIS)

    Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

    2006-01-01

    The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

  13. Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

    Science.gov (United States)

    Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

    2015-10-14

    The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

  14. Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Kashtiban, R J; Bangert, U; Harvey, A J; Sherliker, B; Halsall, M P

    2010-01-01

    InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation.

  15. Ratiometric photoluminescence sensing based on Ti3C2 MXene quantum dots as an intracellular pH sensor.

    Science.gov (United States)

    Chen, Xu; Sun, Xueke; Xu, Wen; Pan, Gencai; Zhou, Donglei; Zhu, Jinyang; Wang, He; Bai, Xue; Dong, Biao; Song, Hongwei

    2018-01-18

    Intracellular pH sensing is of importance and can be used as an indicator for monitoring the evolution of various diseases and the health of cells. Here, we developed a new class of surface-functionalized MXene quantum dots (QDs), Ti 3 C 2 , by the sonication cutting and hydrothermal approach and further explored their intracellular pH sensing. The functionalized Ti 3 C 2 QDs exhibit bright excitation-dependent blue photoluminescence (PL) originating from the size effect and surface defects. Meanwhile, Ti 3 C 2 QDs demonstrate a high PL response induced by the deprotonation of the surface defects. Furthermore, combining the highly pH sensitive Ti 3 C 2 QDs with the pH insensitive [Ru(dpp) 3 ]Cl 2 , we developed a ratiometric pH sensor to quantitatively monitor the intracellular pH values. These novel MXene quantum dots can serve as a promising platform for developing practical fluorescent nanosensors.

  16. Photoluminescence related to Gd3+:N-vacancy complex in GaN:Gd multi-quantum wells

    International Nuclear Information System (INIS)

    Almokhtar, Mohamed; Emura, Shuichi; Koide, Akihiro; Fujikawa, Takashi; Asahi, Hajime

    2015-01-01

    Highlights: • We grew Gd-doped GaN multi-quantum wells (MQWs) with quantum layer thickness of one nm by MBE. • The X-ray absorption near edge structure spectra observed at Gd LIII-edge indicate a nitrogen vacancy adjacent to Gd substituting the Ga ion in Gd-doped GaN MQW. • The photoluminescence of the samples is discussed considering the formation of a Gd 3+ :Nitrogen-vacancy complex. • A model is presented considering exciton-polaron formation trapped in defect sites around the Gd 3+ :N-vacancy complex in Gd-doped GaN MQWs. - Abstract: The photoluminescence of Gd-doped GaN multi-quantum wells (MQWs) is presented and discussed considering the formation of a Gd 3+ :Nitrogen-vacancy (N-vacancy) complex. A lower energy photoluminescence peak was observed for the Gd-doped GaN MQW sample with respect to the main peak assigned to a neutral donor bound exciton (D 0 X) of the undoped GaN MQW sample. The X-ray absorption near edge structure spectrum observed at Gd L III -edge indicates a nitrogen vacancy adjacent to the Gd substituting the Ga ion in Gd-doped GaN MQW sample. Local stresses around the Gd dopants in Gd-doped GaN matrix generated due to the larger diameter of the Gd 3+ ion with respect to the Ga 3+ ion can be relieved by the creation of vacancies. The lower formation energy of N-vacancies in GaN matrix introduce them as a preferred candidate to relieve the generated stresses. A Gd 3+ :N-vacancy complex consisting of a Gd 3+ ion and the created nitrogen vacancy adjacent to the Gd 3+ dopant is likely to form in GaN:Gd matrix. The lower photoluminescence peak energy observed in the Gd-doped GaN MQW sample is assigned to the recombination of an exciton captured at the Gd 3+ :N-vacancy complex forming a small polaron-like state. A model is presented considering the small exciton-polaron population in defect sites captured around the Gd 3+ ions in the Gd-doped GaN

  17. Highly photoluminescent and photostable CdSe quantum dot-nylon hybrid composites for efficient light conversion applications

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Ying; Riehle, Frank-Stefan [Freiburg Materials Research Centre (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), Georg Koehler Allee 103, University of Freiburg, D-79110 Freiburg (Germany); Nitschke, Roland [Life Imaging Center, Centre of Systems Biology, University of Freiburg Habsburgerstr. 49, D-79104 Freiburg (Germany); Centre for Biological Signalling Studies (BIOSS), University of Freiburg (Germany); Krueger, Michael, E-mail: michael.krueger@fmf.uni-freiburg.de [Freiburg Materials Research Centre (FMF), University of Freiburg, Stefan-Meier-Str. 21, D-79104 Freiburg (Germany); Department of Microsystems Engineering (IMTEK), Georg Koehler Allee 103, University of Freiburg, D-79110 Freiburg (Germany)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer A novel in situ synthesis approach for highly luminescent CdSe core QDs-nylon hybrid materials. Black-Right-Pointing-Pointer Potential applications for light and energy conversion are demonstrated. Black-Right-Pointing-Pointer Three dimensional structures out of this hybrid material are available. - Abstract: Highly photoluminescent hexadecylamine (HDA) capped core CdSe quantum dots (QDs) with fluorescent quantum yields (QYs) up to 60% were synthesized using a hot injection method and directly incorporated into nylon polymer. For the incorporation of crude CdSe QDs into nylon a simple reproducible and upscalable one pot approach was developed without the need of further purification steps. The photoluminescence (PL) properties of the core QDs and the resulting QD-polymer hybrid composites were investigated and compared. Red emitting hybrid materials exhibit a QY of 60% with a high potential for applications in direct light and energy conversion. The hybrid materials could be successfully utilized as LED conversion layers. By avoiding exposure to oxygen the hybrid films can be kept for a month without detecting a significant decrease in luminescence. Various three dimensional structures are easily available opening doors for further applications such as novel materials for fluorescence standard development in laser scanning microscopy (LSM).

  18. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

    Science.gov (United States)

    Netzel, C.; Knauer, A.; Weyers, M.

    2012-12-01

    We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

  19. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

    International Nuclear Information System (INIS)

    Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

    2016-01-01

    The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

  20. Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN

    NARCIS (Netherlands)

    de Boer, W.D.A.M.; McGonigle, C.; Gregorkiewicz, T.; Fujiwara, Y.; Stallinga, P.

    2014-01-01

    We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of

  1. Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Ping, E-mail: mse_yangp@ujn.edu.cn [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China); Matras-Postolek, Katarzyna [Faculty of Chemical Engineering and Technology, Cracow University of Technology, Krakow 31-155 (Poland); Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China)

    2015-10-15

    Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

  2. Absolute spectroscopy near 7.8 {\\mu} m with a comb-locked extended-cavity quantum-cascade-laser

    KAUST Repository

    Lamperti, Marco; Alsaif, Bidoor; Gatti, Davide; Fermann, Martin; Laporta, Paolo; Farooq, Aamir; Marangoni, Marco

    2017-01-01

    We report the first experimental demonstration of frequency-locking of an extended-cavity quantum-cascade-laser (EC-QCL) to a near-infrared frequency comb. The locking scheme is applied to carry out absolute spectroscopy of N2O lines near 7.87 {\\mu

  3. Absolute Configuration Determination by Quantum Mechanical Calculation of Chiroptical Spectra: Basics and Applications to Fungal Metabolites.

    Science.gov (United States)

    Superchi, Stefano; Scafato, Patrizia; Gorecki, Marcin; Pescitelli, Gennaro

    2018-01-01

    Quantum mechanical simulations of chiroptical properties, such as electronic circular dichroism (ECD), optical rotation (OR), and vibrational circular dichroism (VCD), have rapidly become very popular to assign the absolute configuration of novel natural products. We review the application of the ECD/OR/VCD computational methodology to chiral metabolites of fungal origin. First, we summarize the fundamentals of the three spectroscopies; then, we focus on the specific experimental and computational issues allied to the application of their calculations. We surveyed the entire literature describing the use of ECD/OR/VCD computations for fungal metabolites, and catalogued all papers according to the method employed and to the structural family of compounds. Then, we chose several examples to illustrate the use of the techniques and highlight the practical application of the computational approach. Our literature survey demonstrates that the simulation of ECD/OR/VCD spectra is nowadays widespread and accessible also to non-experts, although a good computational practice is necessary to avoid wrong assignments. ECD is still the most common technique used in the context of fungal metabolites. OR and VCD may be profitably employed when the compound of interest lacks chromophoric groups. Our examples illustrate that the combination of two or more chiroptical methods is strongly advisable in some cases, especially in the presence of high conformational flexibility, where a single technique does not lead to a safe conclusion. The ECD/OR/VCD computational approach is a reliable and versatile method to assign the absolute configuration of fungal metabolites and related natural products. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  4. Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Iida, Daisuke; Chen, Yuntian

    2016-01-01

    We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed...

  5. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well

    International Nuclear Information System (INIS)

    Baranowski, M; Kudrawiec, R; Latkowska, M; Syperek, M; Misiewicz, J; Sarmiento, T; Harris, J S

    2013-01-01

    In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ∼700 °C and ∼760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ∼720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.

  6. Photoluminescence Detected Doublet Structure in the Integer and Fractional Quantum Hall Regime

    International Nuclear Information System (INIS)

    Kim, Yongmin; Munteanu, F.M.; Perry, C.H.; Reno, J.L.; Rickel, D.G.; Simmons, J.A.

    1999-01-01

    We present here the results of polarized magneto-photoluminescence measurements on a high mobility single-heterojunction. The presence of a doublet structure over a large magnetic field range (2>v>l/6) is interpreted as possible evidence for the existence of a magneto-roton minima of the charged density waves. This is understood as an indication of strong electronic correlation even in the case of the IQHE limit

  7. Intense, stable and excitation wavelength-independent photoluminescence emission in the blue-violet region from phosphorene quantum dots

    Science.gov (United States)

    Ge, Shuaipeng; Zhang, Lisheng; Wang, Peijie; Fang, Yan

    2016-01-01

    Nanoscale phosphorene quantum dots (PQDs) with few-layer structures were fabricated by pulsed laser ablation of a bulk black phosphorus target in diethyl ether. An intense and stable photoluminescence (PL) emission of the PQDs in the blue-violet wavelength region is clearly observed for the first time, which is attributed to electronic transitions from the lowest unoccupied molecular orbital (LUMO) to the highest occupied molecular orbital (HOMO) and occupied molecular orbitals below the HOMO (H-1, H-2), respectively. Surprisingly, the PL emission peak positions of the PQDs are not red-shifted with progressively longer excitation wavelengths, which is in contrast to the cases of graphene and molybdenum disulphide quantum dots. This excitation wavelength-independence is derived from the saturated passivation on the periphery and surfaces of the PQDs by large numbers of electron-donating functional groups which cause the electron density on the PQDs to be dramatically increased and the band gap to be insensitive to the quantum size effect in the PQDs. This work suggests that PQDs with intense, stable and excitation wavelength-independent PL emission in the blue-violet region have a potential application as semiconductor-based blue-violet light irradiation sources. PMID:27265198

  8. Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Rihani, J.; Sedrine, N.B.; Sallet, V.; Oueslati, M.; Chtourou, R.

    2008-01-01

    InAs quantum dots (QDs) on GaAs (0 0 1) substrates were grown by Molecular Beam Epitaxy (MBE) using two growth temperatures. Photoluminescence (PL) pump power dependence measurements at low temperature were carried out for sample grown at higher temperature (520 deg. C). With increasing excitation density, the ground-state transition energy is found to decrease by 8 meV, while the excited-state transition energies exhibit resonance behaviour. The redshift of the ground-state emission was related to the band-gap renomalization (BGR) effect whereas the blueshift of the excited-state emissions was assigned to the compensation between filling of fine structure states and BGR effects. Using a quasi-resonant PL measurement, we have shown that the renormalization of the band-gap had to occur in the QD barrier

  9. Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies

    International Nuclear Information System (INIS)

    Ivanov, Ts; Donchev, V; Angelova, T; Cros, A; Cantarero, A; Shtinkov, N; Borissov, K; Fuster, D; Gonzalez, Y; Gonzalez, L

    2010-01-01

    The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.

  10. Characterisation of multi-layer InAs/InP quantum wires by surface photovoltage and photoluminescence spectroscopies

    Science.gov (United States)

    Ivanov, Ts; Donchev, V.; Angelova, T.; Cros, A.; Cantarero, A.; Shtinkov, N.; Borissov, K.; Fuster, D.; González, Y.; González, L.

    2010-11-01

    The optical properties of multi-layer InAs/InP quantum wires (QWRs) with two different spacer thicknesses have been investigated by means of room temperature surface photovoltage (SPV) and photoluminescence (PL) spectroscopies, combined with empirical tight binding electronic structure calculations and structural data. The SPV and PL spectra reveal several features, which energy positions are in good agreement. They have been ascribed to excitonic transitions, which take place in the QWR families with heights differing by an integer number of monolayers. Comparing the experimental results with the theoretical ones, we have estimated the QWR family heights and the average atomic concentration of phosphorus in the QWRs. From the simultaneous analysis of the SPV amplitude and phase spectra, based on our vector model for SPV signal representation, a deeper understanding of the SPV results and of the mechanisms of carrier separation in the sample is obtained.

  11. Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

    Science.gov (United States)

    Wang, Yang; Hu, Shuhong; Xie, Hao; Lin, Hongyu; lu, Hongbo; Wang, Chao; Sun, Yan; Dai, Ning

    2018-06-01

    GaSb quantum dots (QDs) with an areal density of ∼1 × 1010 cm-2 are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV.

  12. The influence of bio-conjugation on photoluminescence of CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, Tetyana V. [ESFM Instituto Politécnico Nacional, Av. Instituto Politécnico Nacional, México, D.F. 07738 (Mexico); Vorobiev, Yuri V. [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Makhniy, Victor P. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi (Ukraine); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico)

    2014-11-15

    We report a considerable blue shift in the luminescence spectra of CdSe/ZnS quantum dots conjugated to anti-interleukin-10 antibodies. This phenomenon can be explained theoretically by accounting for bio-conjugation as a process causing electrostatic interaction between a quantum dot and an antibody, which reduces effective volume of the dot core. To solve the Schrödinger equation for an exciton confined in the quantum dot, we use mirror boundary conditions that were successfully tested for different geometries of quantum wells.

  13. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Zhitao [Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia 30332-0826 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Banishev, Alexandr A.; Christensen, James; Dlott, Dana D. [School of Chemical Sciences and Fredrick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N., E-mail: naresh.thadhani@mse.gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245 (United States); Xiao, Pan [LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190 (China); George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States); Zhou, Min [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405 (United States)

    2016-07-28

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  14. Exploration of CdTe quantum dots as mesoscale pressure sensors via time-resolved shock-compression photoluminescent emission spectroscopy

    International Nuclear Information System (INIS)

    Kang, Zhitao; Banishev, Alexandr A.; Christensen, James; Dlott, Dana D.; Lee, Gyuhyon; Scripka, David A.; Breidenich, Jennifer; Summers, Christopher J.; Thadhani, Naresh N.; Xiao, Pan; Zhou, Min

    2016-01-01

    The nanometer size of CdTe quantum dots (QDs) and their unique optical properties, including size-tunable narrow photoluminescent emission, broad absorption, fast photoluminescence decay, and negligible light scattering, are ideal features for spectrally tagging the shock response of localized regions in highly heterogeneous materials such as particulate media. In this work, the time-resolved laser-excited photoluminescence response of QDs to shock-compression was investigated to explore their utilization as mesoscale sensors for pressure measurements and in situ diagnostics during shock loading experiments. Laser-driven shock-compression experiments with steady-state shock pressures ranging from 2.0 to 13 GPa were performed on nanocomposite films of CdTe QDs dispersed in a soft polyvinyl alcohol polymer matrix and in a hard inorganic sodium silicate glass matrix. Time-resolved photoluminescent emission spectroscopy was used to correlate photoluminescence changes with the history of shock pressure and the dynamics of the matrix material surrounding the QDs. The results revealed pressure-induced blueshifts in emitted wavelength, decreases in photoluminescent emission intensity, reductions in peak width, and matrix-dependent response times. Data obtained for these QD response characteristics serve as indicators for their use as possible time-resolved diagnostics of the dynamic shock-compression response of matrix materials in which such QDs are embedded as in situ sensors.

  15. Origin of low quantum efficiency of photoluminescence of InP/ZnS nanocrystals

    DEFF Research Database (Denmark)

    Shirazi, Roza; Kovacs, Andras; Corell, Dennis Dan

    2013-01-01

    In this paper, we study the origin of a strong wavelength dependence of the quantum efficiency of InP/ZnS nanocrystals. We find that while the average size of the nanocrystals increased by 50%, resulting in longer emission wavelength, the quantum efficiency drops more than one order of magnitude...

  16. Red-shift of the photoluminescent emission peaks of CdTe quantum dots due to the synergistic interaction with carbon quantum dot mixtures

    International Nuclear Information System (INIS)

    Pelayo, E; Zazueta, A; López-Delgado, R; Ayón, A; Saucedo, E; Ruelas, R

    2016-01-01

    We report the relatively large red-shift effect observed in down-shifting carbon quantum dots (CQDs) that is anticipated to have a positive impact on the power conversion efficiency of solar cells. Specifically, with an excitation wavelength of 390 nm, CQDs of different sizes, exhibited down-shifted emission peaks centered around 425 nm. However, a solution comprised of a mixture of CQDs of different sizes, was observed to have an emission peak red-shifted to 515 nm. The effect could arise when larger carbon quantum dots capture the photons emitted by their smaller counterparts followed by the subsequent re-emission at longer wavelengths. Furthermore, the red-shift effect was also observed in CdTe QDs when added to a solution with the aforementioned mixture of Carbon QDs. Thus, whereas a solution solely comprised of a collection of CdTe QDs of different sizes, exhibited a down-shifted photoluminescence centered around 555 nm, the peak was observed to be further red-shifted to 580 nm when combined with the solution of CQDs of different sizes. The quantum dot characterization included crystal structure analysis as well as photon absorption and photoluminescence wavelengths. Subsequently, the synthesized QDs were dispersed in a polymeric layer of poly-methyl-methacrylate (PMMA) and incorporated on functional and previously characterized solar cells, to quantify their influence in the electrical performance of the photovoltaic structures. We discuss the synthesis and characterization of the produced Carbon and CdTe QDs, as well as the observed improvement in the power conversion efficiency of the fabricated photovoltaic devices. (paper)

  17. Diamond photonic crystal slab: leaky modes and modified photoluminescence emission of surface-deposited quantum dots

    Czech Academy of Sciences Publication Activity Database

    Ondič, Lukáš; Babchenko, Oleg; Varga, Marián; Kromka, Alexander; Čtyroký, Jiří; Pelant, Ivan

    2012-01-01

    Roč. 2, Dec (2012), s. 1-6 ISSN 2045-2322 R&D Projects: GA ČR(CZ) GAP108/11/0794; GA AV ČR(CZ) IAA101120804; GA AV ČR KJB100100903; GA ČR(CZ) GAP205/10/0046 Grant - others:AVČR(CZ) M100100902 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z20670512 Keywords : photonic crystal * diamond * photoluminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.927, year: 2012 http://www.nature.com/srep/2012/121203/srep00914/full/srep00914.html

  18. High Photoluminescence Quantum Yield in Band Gap Tunable Bromide Containing Mixed Halide Perovskites

    OpenAIRE

    Carolin M. Sutter-Fella Yanbo Li Matin Amani Joel W. Ager III Francesca M. Toma; Eli Yablonovitch Ian D. Sharp and Ali Javey

    2016-01-01

    Hybrid organic–inorganic halide perovskite based semiconductor materials are attractive for use in a wide range of optoelectronic devices because they combine the advantages of suitable optoelectronic attributes and simultaneously low cost solution processability. Here we present a two step low pressure vapor assisted solution process to grow high quality homogeneous CH3NH3PbI3–xBrx perovskite films over the full band gap range of 1.6–2.3 eV. Photoluminescence light in versus light out charac...

  19. Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

    International Nuclear Information System (INIS)

    Khan, Sarzamin; Carneiro, Leonardo S.A.; Romani, Eric C.; Larrudé, Dunieskys G.; Aucelio, Ricardo Q.

    2014-01-01

    The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10 −8 mol L −1 ) to 4.0×10 −6 mol L −1 . The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L −1 levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied

  20. Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

    Science.gov (United States)

    Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen

    2018-04-01

    The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.

  1. Composition-dependent photoluminescence properties of CuInS_2/ZnS core/shell quantum dots

    International Nuclear Information System (INIS)

    Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

    2016-01-01

    CuInS_2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

  2. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    International Nuclear Information System (INIS)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

    2012-01-01

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  5. The pH-dependent photoluminescence of colloidal CdSe/ZnS quantum dots with different organic coatings

    International Nuclear Information System (INIS)

    Debruyne, David; Locquet, Jean-Pierre; Van Bael, Margriet J; Deschaume, Olivier; Bartic, Carmen; Coutiño-Gonzalez, Eduardo; Hofkens, Johan

    2015-01-01

    The photoluminescence (PL) of colloidal quantum dots (QDs) is known to be sensitive to the solution pH. In this work we investigate the role played by the organic coating in determining the pH-dependent PL. We compare two types of CdSe/ZnS QDs equipped with different organic coatings, namely dihydrolipoic acid (DHLA)-capped QDs and phospholipid micelle-encapsulated QDs. Both QD types have their PL intensity quenched at acidic pH values, but they differ in terms of the reversibility of the quenching process. For DHLA-capped QDs, the quenching is nearly irreversible, with a small reversible component visible only on short time scales. For phospholipid micelle-encapsulated QDs the quenching is notably almost fully reversible. We suggest that the surface passivation by the organic ligands is reversible for the micelle-encapsulated QDs. Additionally, both coatings display pH-dependent spectral shifts. These shifts can be explained by a combination of irreversible processes, such as photo-oxidation and acid etching, and reversible charging of the QD surface, leading to the quantum-confined Stark effect (QCSE), the extent of each effect being coating-dependent. At high ionic strengths, the aggregation of QDs also leads to a spectral (red) shift, which is attributable to the QCSE and/or electronic energy transfer. (paper)

  6. Highly photoluminescent MoO{sub x} quantum dots: Facile synthesis and application in off-on Pi sensing in lake water samples

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Sai Jin [Jiangxi Key Laboratory of Mass Spectrometry and Instrumentation, East China University of Technology (ECUT), Nanchang 330013 (China); School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Zhao, Xiao Jing; Zuo, Jun [School of Chemistry, Biology and Material Science, ECUT, Nanchang 330013 (China); Huang, Hai Qing [State Key Laboratory Breeding Base of Nuclear Resources and Environment, ECUT, Nanchang 330013 (China); Zhang, Li, E-mail: zhangli8@ncu.edu.cn [College of Chemistry, Nanchang University, Nanchang 330031 (China)

    2016-02-04

    Molybdenum oxide (MoO{sub x}) is a well-studied transition-metal semiconductor material, and has a wider band gap than MoS{sub 2} which makes it become a promising versatile probe in a variety of fields, such as gas sensor, catalysis, energy storage ect. However, few MoO{sub x} nanomaterials possessing photoluminescence have been reported until now, not to mention the application as photoluminescent probes. Herein, a one-pot method is developed for facile synthesis of highly photoluminescent MoO{sub x} quantum dots (MoO{sub x} QDs) in which commercial molybdenum disulfide powder and hydrogen peroxide (H{sub 2}O{sub 2}) are involved as the precursor and oxidant, respectively. Compared with current synthesis methods, the proposed one has the advantages of rapid, one-pot, easily prepared, environment friendly as well as strong photoluminescence. The obtained MoO{sub x} QDs is further utilized as an efficient photoluminescent probe, and a new off-on sensor has been constructed for phosphate (Pi) determination in complicated lake water samples, attributed to the fact that the binding affinity of Eu{sup 3+} ions to the oxygen atoms from Pi is much higher than that from the surface of MoO{sub x} QDs. Under the optimal conditions, a good linear relationship was found between the enhanced photoluminescence intensity and Pi concentration in the range of 0.1–160.0 μM with the detection limit of 56 nM (3σ/k). The first application of the photoluminescent MoO{sub x} nanomaterials for ion photochemical sensing will open the gate of employing MoO{sub x} nanomaterials as versatile probes in a variety of fields, such as chemi-/bio-sensor, cell imaging, biomedical and so on. - Highlights: • Though increasing effort has been devoted to MoO{sub x} nanomaterials synthesis, only a few reports mentioning its photoluminescence property are available, while even no evidence has shown its applications in chemical and biological sensing. • Herein, a one-pot method possessing the

  7. Absolute measurement of the viscosity of classical and quantum fluids by rotating-cylinder viscometers

    International Nuclear Information System (INIS)

    Donnelly, R.J.; LaMar, M.M.

    1987-01-01

    We discuss the use of rotating-cylinder viscometers to determine absolute shear viscosities of classical fluids and of helium II in the context of past and current knowledge of the stability and flow of these fluids between concentric cylinders. We identify a problem in measuring the absolute viscosity when the inner cylinder is rotating and the outer cylinder is at rest. We conclude by discussing the design of viscometers for absolute viscosity measurements in helium I and helium II

  8. Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.

    Science.gov (United States)

    Park, Youngsin; Chan, Christopher C S; Nuttall, Luke; Puchtler, Tim J; Taylor, Robert A; Kim, Nammee; Jo, Yongcheol; Im, Hyunsik

    2018-05-25

    We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn't show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO 2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.

  9. Anisotropic carrier and exciton confinement in T-shaped quantum wires revealed by magneto-photoluminescence

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Gislason, Hannes; Hvam, Jørn Märcher

    1998-01-01

    The realization of one-dimensional (1D) semiconductor nanostructures with large confinement energies is of importance for device applications. Different techniques such as growth on tilted substrates (Serpentine superlattices) or prepatterned substrates (V-groove quantum wires) and the cleaved...

  10. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    NARCIS (Netherlands)

    Young, M.P.; Woodhead, C.S.; Roberts, J.; Noori, Y.J.; Noble, M.T.; Krier, A.; Smakman, E.P.; Koenraad, P.M.; Hayne, M.; Young, R.J.

    2014-01-01

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at

  11. Atom-chip based quantum gravimetry for the precise determination of absolute local gravity

    Science.gov (United States)

    Abend, S.

    2015-12-01

    We present a novel technique for the precise measurement of absolute local gravity based on cold atom interferometry. Atom interferometry utilizes the interference of matter waves interrogated by laser light to read out inertial forces. Today's generation of these devices typically operate with test mass samples, that consists of ensembles of laser cooled atoms. Their performance is limited by the velocity spread and finite-size of the test masses that impose systematic uncertainties at the level of a few μGal. Rather than laser cooled atoms we employ quantum degenerate ensembles, so called Bose-Einstein condensates, as ultra-sensitive probes for gravity. These sources offer unique properties in temperature as well as in ensemble size that will allow to overcome the current limitations with the next generation of sensors. Furthermore, atom-chip technologies offer the possibility to generate Bose-Einstein condensates in a fast and reliable way. We show a lab-based prototype that uses the atom-chip itself to retro-reflect the interrogation laser and thus serving as inertial reference inside the vacuum. With this setup it is possible to demonstrate all necessary steps to measure gravity, including the preparation of the source, spanning an interferometer as well as the detection of the output signal, within an area of 1 cm3 right below the atom-chip and to analyze relevant systematic effects. In the framework of the center of excellence geoQ a next generation device is under construction at the Institut für Quantenoptik, that will allow for in-field measurements. This device will feature a state-of-the-art atom-chip source with a high-flux of ultra-cold atoms at a repetition rate of 1-2 Hz. In cooperation with the Müller group at the Institut für Erdmessung the sensor will be characterized in the laboratory first, to be ultimately employed in campaigns to measure the Fennoscandian uplift at the level of 1 μGal. The presented work is part of the center of

  12. Excitation density dependence of the photoluminescence from Cd{sub x}Hg{sub 1-x}Te multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tonheim, C R; Selvig, E; Nicolas, S; Breivik, M; Haakenaasen, R [Norwegian Defence Research Establishment, PO Box 25, N-2027 Kjeller (Norway); Gunnaes, A E [Department of Physics, University of Oslo, Boks 1048 Blindern, N-0316 Oslo (Norway)], E-mail: celin.tonheim@ffi.no

    2008-03-15

    A study of the photoluminescence from a four-period Cd{sub x}Hg{sub 1-x}Te multiple quantum well structure at 11 K as a function of excitation density is presented. High-resolution X-ray diffraction and transmission electron microscopy revealed that the quantum well structure is of high quality. This was supported by the narrow photoluminescence peak originating in the ground state electron - heavy hole transition, with a full width at half maximum of only 7.4 meV for an excitation density of 1.3 W/cm{sup 2}. When the excitation density was increased from 1.3 to 23.4 W/cm{sup 2}, the peak position was shifted toward higher energy by 2.6 meV and the full width at half maximum increased from 7.4 to 10.9 meV.

  13. Atom-chip-based quantum gravimetry for the precise determination of absolute gravity

    Science.gov (United States)

    Abend, Sven; Schubert, Christian; Ertmer, Wolfgang; Rasel, Ernst

    2017-04-01

    We present a novel technique for the precise measurement of absolute local gravity with a quantum gravimeter based on an atom chip. Atom interferometry utilizes the interference of matter waves interrogated by laser light to read out inertial forces. Today's generation of these devices typically operate with test mass samples, that consists of ensembles of laser cooled atoms. Their performance is limited by the velocity spread and finite-size of the test masses that impose systematic uncertainties at the level of a few μGal [1]. Rather than laser cooled atoms we employ quantum degenerate ensembles, so called Bose-Einstein condensates [2], as ultra-sensitive probes for gravity. These sources offer unique properties that will allow to overcome the current limitations in the next generation of sensors. Furthermore, atom-chip technology offers the possibility to generate Bose-Einstein condensates in a fast and reliable way. We present a lab-based prototype that uses the atom chip itself to retro-reflect the interrogation laser and thus serves as inertial reference inside the vacuum [3]. With this setup, it is possible to demonstrate all necessary steps to measure gravity, including the preparation of the source, spanning an interferometer as well as the detection of the output signal. All steps are pursued on a baseline of 1 cm right below the atom chip and to analyze relevant systematic effects. In the framework of the center of excellence geoQ a next generation device is under construction at the Institut für Quantenoptik, that will target for in-field measurements. This device will feature a state-of-the-art atom-chip source with a high-flux of ultra-cold atoms at a repetition rate of 1-2 Hz [4]. The device will be characterized in cooperation with the Müller group at the Institut für Erdmessung the sensor and finally employed in a campaign to measure the Fennoscandian uplift at the level of 1 μGal. The presented work is supported by the CRC 1227 DQ-mat, the

  14. Photoluminescence up-conversion in five Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells with different x values

    DEFF Research Database (Denmark)

    Machida, S.; Tadakuma, T.; Satake, A.

    Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence.......Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence....

  15. Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

    Science.gov (United States)

    Can, Nuri; Okur, Serdal; Monavarian, Morteza; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Teke, Ali; Özgür, Ümit

    2015-03-01

    Temperature dependent recombination dynamics in c-plane InGaN light emitting diodes (LEDs) with different well thicknesses, 1.5, 2, and 3 nm, were investigated to determine the active region dimensionality and its effect on the internal quantum efficiencies. It was confirmed for all LEDs that the photoluminescence (PL) transients are governed by radiative recombination at low temperatures while nonradiative recombination dominates at room temperature. At photoexcited carrier densities of 3 - 4.5 x 1016 cm-3 , the room-temperature Shockley-Read-Hall (A) and the bimolecular (B) recombination coefficients (A, B) were deduced to be (9.2x107 s-1, 8.8x10-10 cm3s-1), (8.5x107 s-1, 6.6x10-10 cm3s-1), and (6.5x107 s-1, 1.4x10-10 cm3s-1) for the six period 1.5, 2, and 3 nm well-width LEDs, respectively. From the temperature dependence of the radiative lifetimes, τrad α Tn/2, the dimensionality n of the active region was found to decrease consistently with decreasing well width. The 3 nm wide wells exhibited ~T1.5 dependence, suggesting a three-dimensional nature, whereas the 1.5 nm wells were confirmed to be two-dimensional (~T1) and the 2 nm wells close to being two-dimensional. We demonstrate that a combination of temperature dependent PL and time-resolved PL techniques can be used to evaluate the dimensionality as well as the quantum efficiencies of the LED active regions for a better understanding of the relationship between active-region design and the efficiency limiting processes in InGaN LEDs.

  16. Photoluminescent enhancement of CdSe/Cd(1-x) Zn(x)S quantum dots by hexadecylamine at room temperature.

    Science.gov (United States)

    Yang, Jie; Yang, Ping

    2012-09-01

    CdSe/Cd(1-x) Zn(x)S core/shell quantum dots (QDs) were fabricated in 1-octadecene via a two step synthesis. CdSe cores were first prepared using CdO, trioctylphosphine (TOP) selenium, and stearic acid. Subsquently, a Cd(1-x) Zn(x)S shell coating was carried out using zinc acetate dihydrate, cadmium acetate dihydrate, TOPS, and hexadecylamine (HDA) starting materials in the friendly organic system under relatively low temperature. The absorption and photoluminescence (PL) spectra have a significant red shift after the coverage of Cd(1-x)Zn(x)S shell on CdSe cores. The X-ray diffraction analysis of samples confirmed the formation of core/shell structure. The PL quantum yields (QYs) of CdSe/Cd(1-x)Zn(x)S QDs were improved gradually with time at room temperature. This is ascribed to the surface passivation of HDA to the QDs during store. This phenomenon was confirmed by the Fourier transform infrared spectrum of samples. Namely, HDA does not capped on the surface of as-prepared QDs, in which a low PL QYs was observed (less than 10%). Being storing for certain time, HDA attached to the surface of the QDs, in which the PL QYs increased (up to 31%) and the full width at half maximum of PL spectra decreased. Moreover, the fluorescence decay curve of the core/shell QDs is closer to a biexponential decay profile and has a longer average PL lifetime. The variation of average PL lifetime also indicated the influence of HDA during store.

  17. The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots

    Science.gov (United States)

    Borkovska, L.; Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V.; Rachkov, O.; Kryshtab, T.

    2013-09-01

    The change of the photoluminescence (PL) and optical characteristics in non-conjugated and conjugated with S6K2 antibody CdSe/ZnS core/shell quantum dots (QDs) during storage in air has been studied by the conventional PL, micro-PL and micro-Raman techniques. The QDs dried on a crystalline Si substrate were kept in the darkness and under illumination. In the PL spectra, the storage resulted in a blue shift of PL peak position, in the increasing of the full width at a half maximum (FWHM) of the PL band and in the decreasing of the PL intensity. In the Raman spectra, the shift of the CdSe LO peak position to the low frequency region and the increasing of its FWHM were observed. The transformations in the PL and optical characteristics correlate with each other and are found to be the largest in bio-conjugated QDs stored under illumination. The increase of the light intensity accelerated the changes occurred during storage. An oxidation of the QD core, which decreases the QD size, is supposed to be responsible for observed transformations. The bio-conjugation is assumed to promote QD oxidation that results in different PL peak position in stored non-conjugated and bio-conjugated QDs. The mechanism of the effect is discussed.

  18. Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

    Science.gov (United States)

    Blenkhorn, W. E.; Schulz, S.; Tanner, D. S. P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.

    2018-05-01

    In this paper we report on changes in the form of the low temperature (12 K) photoluminescence spectra of an InGaN/GaN quantum well structure as a function of excitation photon energy. As the photon energy is progressively reduced we observe at a critical energy a change in the form of the spectra from one which is determined by the occupation of the complete distribution of hole localisation centres to one which is determined by the resonant excitation of specific localisation sites. This change is governed by an effective mobility edge whereby the photo-excited holes remain localised at their initial energy and are prevented from scattering to other localisation sites. This assignment is confirmed by the results of atomistic tight binding calculations which show that the wave function overlap of the lowest lying localised holes with other hole states is low compared with the overlap of higher lying hole states with other higher lying hole states.

  19. Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

    International Nuclear Information System (INIS)

    Wang, L.S.; Sun, W.H.; Chua, S.J.; Johnson, Mark

    2003-01-01

    The GaN/AlGaN multi-quantum-wells (MQWs) have been grown via metalorganic chemical vapor deposition (MOCVD). Micro-photoluminescence (PL) measurement has been performed on non-, In- and Si- doped GaN/AlGaN MQW samples in the temperature ranges of 90-300 K. In the non-doped GaN/AlGaN MQWs we observed the free exciton peak at 3.4587 eV at 90 K. Other exciton related peaks are located at 3.4346, 3.4177, 3.394 and 3.3129 eV, which are probably associated with the strongly localized excitons involving the defects. In In-doped GaN/AlGaN MQWs, the free exciton peaks have a slight red-shift from 3.4712 to 3.4629 eV, but the PL intensities become stronger with increasing trimethylindium (TMIn) flow from 10.6 to 42.6 μmol min -1 . With Si-doping in the well layers, PL exhibits an envelope of exciton bands ranged from 3.4796 (free exciton) to 3.43915 eV. The excitonic peaks in the bands vary in intensity and position with sample temperature. In addition, we have also observed the LO phonon replica of AlGaN interacted by the laser line due to the resonance effect

  20. Transformation of photoluminescence spectra at the bioconjugation of core-shell CdSe/ZnS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Macotela, L.G.V.; Douda, J. [UPIITA - Instituto Politecnico Nacional, Mexico (Mexico); Torchynska, T.V. [ESFM- Instituto Politecnico Nacional, Mexico (Mexico); Sierra, R.P. [CINVESTAV del IPN, Mexico (Mexico); Shcherbyna, L. [V. Lashkarev Institute of Semiconductor Physics at NASU, Kiev (Ukraine)

    2010-04-15

    The photoluminescence (PL) of nonconjugated and bioconjugated core-shell CdSe/ZnS quantum dots (QDs) has been discussed in this paper. Commercial CdSe/ZnS QDs with the size of 3.6-4.0 nm covered by polymer with emission at 560-565 nm (2.19-2.22 eV) have been used. The QD bioconjugation is performed with the mouse anti PSA (Prostate-Specific Antigen) antibody (mab). PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in the CdSe core (2.19-2.22 eV) and to hot electron-hole emission via surface states (2.37, 2.73 and 3.06 eV) at the CdSe/ZnS or ZnS/polymer interfaces. The PL spectrum of bioconjugated QDs has changed dramatically, with essential decreasing of the hot electron-hole recombination flow via interface states. This effect is explained on the base of re-charging of QD interface states at the bioconjugation. It is shown that the CdSe/ZnS QDs with interface states are very promising for the study of bioconjugation effects to antibodies (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Photoluminescence investigation of ZnO quantum dots surface modified with silane coupling agent as a capping agent

    Energy Technology Data Exchange (ETDEWEB)

    Moghaddam, E., E-mail: e.moghaddam@merc.ac.ir; Youzbashi, A.A; Kazemzadeh, A.; Eshraghi, M.J.

    2015-12-15

    This report presents the luminescence measurement results of surface modified zinc oxide quantum dots (ZnO QDs) performed with different concentrations of 3-aminopropyltriethoxysilane (APTES) as a capping agent. Surface modification was performed by an in situ procedure on the surface of ZnO QDs in a sol gel solution route. The modified samples were characterized by various analytical techniques such as XRD, TEM, FT-IR, and UV–vis spectroscopy. Surface modification efficiency was experimentally investigated by variation of the photoluminescence) PL (emission intensities observed by changing the capping agent concentration. In order to investigate the effectiveness of the capping agent on the stability of the QDs, The PL spectra of the surface modified ZnO QDs were compared with that of unmodified ZnO QDs. Molecular layer of this type and similar silane based molecules with a variety of surface terminations that have the same molecular attachment schemes should enable interface engineering in optimizing the chemical selectivity of ZnO biosensors or electrical and optical properties of ZnO-polymer hybrid films. - Highlights: • Surface modification of ZnO QDs resulted in the small- size QDs (around 2 nm). • Surface modification resulted in the enhancement of the UV emission upon quenching the visible emission. • Surface modification efficiency was decreased with reduction of the QD size • Intensified stability of the surface modified ZnO QDs was obtained from surface modification.

  2. Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Lijuan [Donghua University, Applied Physics Department, Shanghai (China); Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Pang, Qi; Ge, Weikun; Wang, Jiannong [Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Yang, Shihe [Hong Kong University of Science and Technology, Chemistry Department and the Institute of Nano-Science and Technology, Hong Kong (China)

    2011-05-15

    The effects of oxygenic versus oxygen-free environments on colloidal CdSe nano-tetrapods and quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The decays of PL intensities for tetrapods and QDs in oxygen-free solution (chloroform) and in air (on silicon) can be well fitted by a bi-exponential function. Based on the emission-energy dependence of carrier lifetimes and the amplitude ratio of the fast-decay component to the slow-decay component, the fast and slow PL decays of CdSe nanocrystals are attributed to the recombination of delocalized carriers in the core states and localized carriers in the surface states, respectively. The PL intensities of CdSe nano-tetrapods and QDs were found to be five times and an order of magnitude higher in air than in vacuum, respectively, which is explained by the passivation of surface defects by the polar gas (oxygen) absorption. The lower enhancement in PL intensities of CdSe nano-tetrapods is explained by the special morphology of the tetrapods. (orig.)

  3. Composition-dependent trap distributions in CdSe and InP quantum dots probed using photoluminescence blinking dynamics.

    Science.gov (United States)

    Chung, Heejae; Cho, Kyung-Sang; Koh, Weon-Kyu; Kim, Dongho; Kim, Jiwon

    2016-07-21

    Although Group II-VI quantum dots (QDs) have attracted much attention due to their wide range of applications in QD-based devices, the presence of toxic ions in II-VI QDs raises environmental concerns. To fulfill the demands of nontoxic QDs, synthetic routes for III-V QDs have been developed. However, only a few comparative analyses on optical properties of III-V QDs have been performed. In this study, the composition-related energetic trap distributions have been explored by using three different types of core/multishell QDs: CdSe-CdS (CdSe/CdS/ZnS), InP-ZnSe (InP/ZnSe/ZnS), and InP-GaP (InP/GaP/ZnS). It was shown that CdSe-CdS QDs have much larger trap densities than InP-shell QDs at higher energy states (at least 1Eg (band gap energy) above the lowest conduction band edge) based on probability density plots and Auger ionization efficiencies which are determined by analyses of photoluminescence blinking dynamics. This result suggests that the composition of encapsulated QDs is closely associated with the charge trapping processes, and also provides an insight into the development of more environmentally friendly QD-based devices.

  4. Graphene Oxide Quantum Dots Exfoliated From Carbon Fibers by Microwave Irradiation: Two Photoluminescence Centers and Self-Assembly Behavior.

    Science.gov (United States)

    Yuan, Jian-Min; Zhao, Rui; Wu, Zhen-Jun; Li, Wei; Yang, Xin-Guo

    2018-04-17

    Graphene oxide quantum dots (GOQDs) attract great attention for their unique properties and promising application potential. The difficulty in the formation of a confined structure, and the numerous and diverse oxygen-containing functional groups results in a low emission yield to GOQDs. Here, GOQDs with a size of about 5 nm, exfoliated from carbon fibers by microwave irradiation, are detected and analyzed. The exfoliated GOQDs are deeply oxidized and induce large numbers of epoxy groups and ether bonds, but only a small amount of carbonyl groups and hydroxyl groups. The subdomains of sp 2 clusters, involving epoxy groups and ether bonds, are responsible for the two strong photoluminescence emissions of GOQDs under different excitation wavelengths. Moreover, GOQDs tend to self-assemble at the edges of their planes to form self-assembly films (SAFs) with the evaporation of water. SAFs can further assemble into different 3D patterns with unique microstructures such as sponge bulk, sponge ball, microsheet, sisal, and schistose coral, which are what applications such as supercapacitors, cells, catalysts, and electrochemical sensors need. This method for preparation of GOQDs is easy, quick, and environmentally friendly, and this work may open up new research interests about GOQDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Venger, Ye. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevska, O. [L. Pysarzhevsky Institute of Physical Chemistry, NAS of Ukraine, pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T., E-mail: kryshtab@gmail.com [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2013-09-15

    The effect of photo-induced enhancement (more than a tenfold) of room temperature deep-trap photoluminescence (PL) in CdSe quantum dots (QDs) embedded in polyvinyl alcohol (PVA) film has been found and investigated by the PL and X-ray diffraction methods. The effect is observed under illumination of the QD/PVA composite with LED's light of 409 or 470 nm at elevated temperatures and is shown to be caused by an increase of the activation energy of thermal quenching of defect-related PL. It is shown that thermal annealing of the composite by itself stimulates polymer crystallization and produces a small increase in the intensity of both the band-edge and defect-related PL bands of CdSe QDs. It is found that the effect of illumination decreases when the annealing temperature increases from 90 °C to 120 °C because thermal annealing at 120 °C per se results in strong enhancement of room temperature deep-trap PL. The effect of photo-induced enhancement of defect-related PL is found to be irreversible and is assumed to be related to the change of QD surface defect passivation or surface defect rearrangement. This is ascribed to partial destruction of PVA matrix as a result of interaction of QD/PVA interface with photocarriers generated in the QDs due to LED's light absorption.

  6. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    Directory of Open Access Journals (Sweden)

    M. P. Young

    2014-11-01

    Full Text Available We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 μeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  7. On quantum efficiency of photoluminescence in ZnO layers and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

    2009-12-15

    In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

  8. Quantification of thyroxine by the selective photoluminescence quenching of L-cysteine–ZnS quantum dots in aqueous solution containing hexadecyltrimethylammonium bromide

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Sarzamin; Carneiro, Leonardo S.A. [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil); Romani, Eric C.; Larrudé, Dunieskys G. [Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900, Rio de Janeiro-RJ (Brazil); Aucelio, Ricardo Q., E-mail: aucelior@puc-rio.br [Chemistry Department, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro-RJ (Brazil)

    2014-12-15

    The determination of L-thyroxine is proposed based on the photoluminescence quenching effect caused on the L-cysteine modified ZnS quantum dots (L-cysteine ZnS QDs) aqueous dispersion. Under optimum conditions, the analytical response followed a Stern–Volmer model and the experimental conditions were adjusted to enable a robust and reproducible photoluminescence signal. The linear response observed in the quantum dots aqueous dispersion covered the L-thyroxine concentration from the LOQ (2.0×10{sup −8} mol L{sup −1}) to 4.0×10{sup −6} mol L{sup −1}. The approach was tested in the determination of L-thyroxine in pharmaceutical formulations used to treat patients with thyroid gland disorder. The percent recoveries in controlled samples were between 93.3 and 103%. Analyte fortified saliva was also evaluated as a possible sample for L-thyroxine monitoring of a patient under treatment. It was identified a static type of photoluminescence quenching caused by L-thyroxine. - Highlights: • L-cysteine ZnS QDs were used as a photoluminescent probe to detect L-thyroxine. • Intensity of probe decreases following a Stern–Volmer model. • The method can detect down ng L{sup −1} levels of L-thyroxine in the probe dispersion. • Method was used to determinate of L-thyroxine in saliva and in pharmaceuticals. • Mechanism of interaction between L-thyroxine and quantum dots was studied.

  9. Composition Screening in Blue-Emitting Li4Sr1+xCa0.97-x(SiO4)2:Ce3+ Phosphors for High Quantum Efficiency and Thermally Stable Photoluminescence.

    Science.gov (United States)

    Zhang, Jingchen; Zhang, Jilin; Zhou, Wenli; Ji, Xiaoyu; Ma, Wentao; Qiu, Zhongxian; Yu, Liping; Li, Chengzhi; Xia, Zhiguo; Wang, Zhengliang; Lian, Shixun

    2017-09-13

    Photoluminescence quantum efficiency (QE) and thermal stability are important for phosphors used in phosphor-converted light-emitting diodes (pc-LEDs). Li 4 Sr 1+x Ca 0.97-x (SiO 4 ) 2 :0.03Ce 3+ (-0.7 ≤ x ≤ 1.0) phosphors were designed from the initial model of Li 4 SrCa(SiO 4 ) 2 :Ce 3+ , and their single-phased crystal structures were found to be located in the composition range of -0.4 ≤ x ≤ 0.7. Depending on the substitution of Sr 2+ for Ca 2+ ions, the absolute QE value of blue-emitting composition-optimized Li 4 Sr 1.4 Ca 0.57 (SiO 4 ) 2 :0.03Ce 3+ reaches ∼94%, and the emission intensity at 200 °C remains 95% of that at room temperature. Rietveld refinements and Raman spectral analyses suggest the increase of crystal rigidity, increase of force constant in CeO 6 , and decrease of vibrational frequency by increasing Sr 2+ content, which are responsible for the enhanced quantum efficiency and thermal stability. The present study points to a new strategy for future development of the pc-LEDs phosphors based on local structures correlation via composition screening.

  10. Violet-to-Blue Gain and Lasing from Colloidal CdS Nanoplatelets: Low-Threshold Stimulated Emission Despite Low Photoluminescence Quantum Yield

    Energy Technology Data Exchange (ETDEWEB)

    Diroll, Benjamin T.; Talapin, Dmitri V.; Schaller, Richard D.

    2017-02-13

    Amplified spontaneous emission (ASE) and lasing from solution-processed materials are demonstrated in the challenging violet-to-blue (430–490 nm) spectral region for colloidal nanoplatelets of CdS and newly synthesized core/shell CdS/ZnS nanoplatelets. Despite modest band-edge photoluminescence quantum yields of 2% or less for single excitons, which we show results from hole trapping, the samples exhibit low ASE thresholds. Furthermore, four-monolayer CdS samples show ASE at shorter wavelengths than any reported film of colloidal quantum-confined material. This work underlines that low quantum yields for single excitons do not necessarily lead to a poor gain medium. The low ASE thresholds originate from negligible dispersion in thickness, large absorption cross sections of 2.8 × 10–14 cm–2, and rather slow (150 to 300 ps) biexciton recombination. We show that under higher-fluence excitation, ASE can kinetically outcompete hole trapping. Using nanoplatelets as the gain medium, lasing is observed in a linear optical cavity. This work confirms the fundamental advantages of colloidal quantum well structures as gain media, even in the absence of high photoluminescence efficiency.

  11. Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    De Angelis, Roberta; Casalboni, Mauro; De Matteis, Fabio; Hatami, Fariba; Masselink, William T.; Zhang, Hong; Prosposito, Paolo

    2015-01-01

    InP/InGaP surface quantum dots represent an attractive material for optical chemical sensors since they show a remarkable near infra-red emission at room temperature, whose intensity increases rapidly and reversibly depending on the composition of the environmental atmosphere. We show here their emission properties by time resolved photoluminescence spectroscopy investigation. Photoluminescence transients with and without chemical solvent vapours (methanol, clorophorm, acetone and water) were fitted with a 3-exponential decay law with times of about 0.5 ns, 2 ns and 7 ns. The measurements revealed a weak effect on clorophorm, acetone and water, while the initial decay time of InP surface quantum dots increases (up to 15%) upon methanol vapour exposure, indicating that the organic molecules efficiently saturate QD non-radiative surface states. - Highlights: • InP SQDs emission depends on the presence of solvent vapours in the atmosphere. • TR photoluminescence transients were fitted with a 3-exponential decay law. • The initial decay time increases (up to 15%) upon methanol vapour exposure. • Organic molecules efficiently saturate QD non-radiative surface states.

  12. A robust ligand exchange approach for preparing hydrophilic, biocompatible photoluminescent quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Sujuan; Zhou, Changhua [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China); Yuan, Hang [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Shen, Huaibin [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China); Zhao, Wenxiu [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Ma, Lan, E-mail: malan@sz.tsinghua.edu.cn [Life Science Division, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Li, Lin Song, E-mail: lsli@henu.edu.cn [Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004 (China)

    2013-08-01

    Graphical abstract: - Highlights: • Aqueous CdSe/ZnS QDs were prepared using polymaleic anhydrides as capping ligand. • Effect of reaction temperature and time were systematically studied in the synthesis process. • Water-soluble QDs exhibited a good stability in physiological relevant environment. • The aqueous QDs were applied as biological probe to detect human embryonic stem cell. - Abstract: This paper describes a robust ligand exchange approach for preparing biocompatible CdSe/ZnS quantum dots (QDs) to make bioprobe for effective cell imaging. In this method, polymaleic anhydride (PMA) ligand are first used to replace original hydrophobic ligand (oleic acid) and form a protection shell with multiple hydrophilic groups to coat and protect CdSe/ZnS QDs. The as-prepared aqueous QDs exhibit small particle size, good colloidal stability in aqueous solutions with a wide range of pH, salt concentrations and under thermal treatment, which are necessary for biological applications. The use of this new class of aqueous QDs for effective cell imaging shows strong fluorescence signal to human embryonic stem cell, which demonstrate that PMA coated QDs are fully satisfied with the requirements of preparing high quality biological probe.

  13. Combination of a Sample Pretreatment Microfluidic Device with a Photoluminescent Graphene Oxide Quantum Dot Sensor for Trace Lead Detection.

    Science.gov (United States)

    Park, Minsu; Ha, Hyun Dong; Kim, Yong Tae; Jung, Jae Hwan; Kim, Shin-Hyun; Kim, Do Hyun; Seo, Tae Seok

    2015-11-03

    A novel trace lead ion (Pb(2+)) detection platform by combining a microfluidic sample pretreatment device with a DNA aptamer linked photoluminescent graphene oxide quantum dot (GOQD) sensor was proposed. The multilayered microdevice included a microchamber which was packed with cation exchange resins for preconcentrating metal ions. The sample loading and recovery were automatically actuated by a peristaltic polydimethylsiloxane micropump with a flow rate of 84 μL/min. Effects of the micropump actuation time, metal ion concentration, pH, and the volumes of the sample and eluent on the metal ion capture and preconcentration efficiency were investigated on a chip. The Pb(2+) samples whose concentrations ranged from 0.48 nM to 1.2 μM were successfully recovered with a preconcentration factor value between 4 and 5. Then, the preconcentrated metal ions were quantitatively analyzed with a DNA aptamer modified GOQD. The DNA aptamer on the GOQD specifically captured the target Pb(2+) which can induce electron transfer from GOQD to Pb(2+) upon UV irradiation, thereby resulting in the fluorescence quenching of the GOQD. The disturbing effect of foreign anions on the Pb(2+) detection and the spiked Pb(2+) real samples were also analyzed. The proposed GOQD metal ion sensor exhibited highly sensitive Pb(2+) detection with a detection limit of 0.64 nM and a dynamic range from 1 to 1000 nM. The on-chip preconcentration of the trace metal ions from a large-volume sample followed by the metal ion detection by the fluorescent GOQD sensor can provide an advanced platform for on-site water pollution screening.

  14. Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs: (Si) quantum well

    International Nuclear Information System (INIS)

    Hamdouni, A.; Bousbih, F.; Ben bouzid, S.; Aloulou, S.; Harmand, J.C.; Chtourou, R.

    2008-01-01

    We study the effect of nitrogen content in modulation-doped GaAs/GaAs 1-x N x /GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs 1-x N x /GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model

  15. Photoluminescence of anti-modulation doped near-surface GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

    CERN Document Server

    Bumaj, Y A; Goldkhan, R; Shtajn, N; Golombek, A; Nakov, V; Cheng, T S

    2002-01-01

    The anti-modulation Si-doped GaAs/AlGaAs structures with near-surface single quantum wells grown by molecular-beam epitaxy were exposed to hydrogen plasma at 260 deg C and investigated by low-temperature photoluminescence, photoluminescence excitation and photoreflectance spectroscopy. After hydrogenation, the quenching of the exciton luminescence for the below AlGaAs band gap excitation due to the increase of electric field in the structure has been observed. The effect is consistent with unpinning of Fermi level from mid gap of nominally undoped (p-type) GaAs cap layer due to passivation of surface states by hydrogen without neutralization of shallow impurities in the epilayers

  16. Nearly suppressed photoluminescence blinking of small-sized, blue-green-orange-red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield.

    Science.gov (United States)

    Roy, Debjit; Mandal, Saptarshi; De, Chayan K; Kumar, Kaushalendra; Mandal, Prasun K

    2018-04-18

    CdSe-based core/gradient alloy shell/shell semiconductor quantum dots (CGASS QDs) have been shown to be optically quite superior compared to core-shell QDs. However, very little is known about CGASS QDs at the single particle level. Photoluminescence blinking dynamics of four differently emitting (blue (λem = 510), green (λem = 532), orange (λem = 591), and red (λem = 619)) single CGASS QDs having average sizes 600 nm). In this manuscript, we report nearly suppressed PL blinking behaviour of CGASS QDs with average sizes correlation between the event durations and found that residual memory exists in both the ON- and OFF-event durations. Positively correlated successive ON-ON and OFF-OFF event durations and negatively correlated (anti-correlated) ON-OFF event durations perhaps suggest the involvement of more than one type of trapping process within the blinking framework. The timescale corresponding to the additional exponential term has been assigned to hole trapping for ON-event duration statistics. Similarly, for OFF-event duration statistics, this component suggests hole detrapping. We found that the average duration of the exponential process for the ON-event durations is an order of magnitude higher than that of the OFF-event durations. This indicates that the holes are trapped for a significantly long time. When electron trapping is followed by such a hole trapping, long ON-event durations result. We have observed long ON-event durations, as high as 50 s. The competing charge tunnelling model has been used to account for the observed blinking behaviour in these CGASS QDs. Quite interestingly, the PLQY of all of these differently emitting QDs (an ensemble level property) could be correlated with the truncation time (a property at the single particle level). A respective concomitant increase-decrease of ON-OFF event truncation times with increasing PLQY is also indicative of a varying degree of suppression of the Auger recombination processes in these four

  17. Development of a System for Absolute Quantum Efficiency Determination of Hybrid Photo Diodes

    CERN Document Server

    Hammarstedt, P

    2001-01-01

    At CERN, the European Laboratory for Particle Physics, a new particle accelerator, the Large Hadron Collider (LHC), is under development. The detectors at LHC require development of highly sophisticated technologies, including Hybrid Photo Diodes (HPD) for high efficiency, high resolution single photon detection with a large area coverage. During the HPD development phase, one of the crucial parameters in the optimization of the photocathode creation process is the quantum efficiency. The aim of this Master Thesis has been to design and implement a system for high precision, high resolution quantum efficiency determination over a large, 200-700 nm photon wavelength range. Commercially available components have been obtained, an optomechanical system has been designed and built, and all the necessary data acquisition, control and analysis software has been implemented. The relative precision of the measurement system has been determined to 2%, with additional possible systematic errors less than 2%. Various qu...

  18. Absolute spectroscopy near 7.8 {\\mu} m with a comb-locked extended-cavity quantum-cascade-laser

    KAUST Repository

    Lamperti, Marco

    2017-07-31

    We report the first experimental demonstration of frequency-locking of an extended-cavity quantum-cascade-laser (EC-QCL) to a near-infrared frequency comb. The locking scheme is applied to carry out absolute spectroscopy of N2O lines near 7.87 {\\\\mu}m with an accuracy of ~60 kHz. Thanks to a single mode operation over more than 100 cm^{-1}, the comb-locked EC-QCL shows great potential for the accurate retrieval of line center frequencies in a spectral region that is currently outside the reach of broadly tunable cw sources, either based on difference frequency generation or optical parametric oscillation. The approach described here can be straightforwardly extended up to 12 {\\\\mu}m, which is the current wavelength limit for commercial cw EC-QCLs.

  19. A job for quantum dots: use of a smartphone and 3D-printed accessory for all-in-one excitation and imaging of photoluminescence.

    Science.gov (United States)

    Petryayeva, Eleonora; Algar, W Russ

    2016-04-01

    Point-of-care (POC) diagnostic technologies are needed to improve global health and smartphones are a prospective platform for these technologies. While many fluorescence or photoluminescence-based smartphone assays have been reported in the literature, common shortcomings are the requirement of an excitation light source external to the smartphone and complicated integration of that excitation source with the smartphone. Here, we show that the photographic flash associated with the smartphone camera can be utilized to enable all-in-one excitation and imaging of photoluminescence (PL), thus eliminating the need for an excitation light source external to the smartphone. A simple and low-cost 3D-printed accessory was designed to create a dark environment and direct excitation light from the smartphone flash onto a sample. Multiple colors and compositions of semiconductor quantum dot (QD) were evaluated as photoluminescent materials for all-in-one smartphone excitation and imaging of PL, and these were compared with fluorescein and R-phycoerythrin (R-PE), which are widely utilized molecular and protein materials for fluorescence-based bioanalysis. The QDs were found to exhibit much better brightness and have the best potential for two-color detection. A model protein binding assay with a sub-microgram per milliliter detection limit and a Förster resonance energy transfer (FRET) assay for proteolytic activity were demonstrated, including imaging with serum as a sample matrix. In addition, FRET within tandem conjugates of a QD donor and fluorescent dye acceptor enabled smartphone detection of dye fluorescence that was otherwise unobservable without the QD to enhance its brightness. The ideal properties of photoluminescent materials for all-in-one smartphone excitation and imaging are discussed in the context of several different materials, where QDs appear to be the best overall material for this application.

  20. Bidentate Ligand-passivated CsPbI3 Perovskite Nanocrystals for Stable Near-unity Photoluminescence Quantum Yield and Efficient Red Light-emitting Diodes

    KAUST Repository

    Pan, Jun

    2017-12-17

    Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a post-synthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2’-Iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the non-passivated NCs.

  1. Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

    Energy Technology Data Exchange (ETDEWEB)

    Mrowiński, P.; Misiewicz, J.; Sęk, G. [Laboratory for Optical Spectroscopy of Nanostructures, Division of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland); Tarnowski, K.; Olszewski, J.; Urbańczyk, W. [Division of Optics and Photonics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland); Somers, A.; Kamp, M. [Technische Physik & W. C. Röntgen-Center for Complex Material Systems, Universität Würzburg, Würzburg Germany (Germany); Reithmaier, J. P. [Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel (Germany); Machnikowski, P. [Division of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław (Poland)

    2016-08-21

    Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 μm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from −0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesa and outgoing in the direction normal to the sample surface.

  2. Photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, S.Y. [Grupo de Educacion en Ciencias Experimentales y Matematicas-GECEM, Facultad de Educacion, Universidad de Antioquia, AA 1226 Medellin (Colombia); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Av. Universidad 1001, CP 62209, Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque@fisica.udea.edu.c [Instituto de Fisica, Universidad de Antioquia, AA 1226 Medellin (Colombia)

    2009-12-15

    The photoluminescence energy transitions in GaAs-Ga{sub 1-x}Al{sub x}As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  3. Bidentate Ligand-passivated CsPbI3 Perovskite Nanocrystals for Stable Near-unity Photoluminescence Quantum Yield and Efficient Red Light-emitting Diodes

    KAUST Repository

    Pan, Jun; Shang, Yuequn; Yin, Jun; de Bastiani, Michele; Peng, Wei; Dursun, Ibrahim; Sinatra, Lutfan; El-Zohry, Ahmed M.; Hedhili, Mohamed N.; Emwas, Abdul-Hamid M.; Mohammed, Omar F.; Ning, Zhijun; Bakr, Osman

    2017-01-01

    Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a post-synthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2’-Iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the non-passivated NCs.

  4. Photoluminescence energy transitions in GaAs-Ga1-xAlxAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

    International Nuclear Information System (INIS)

    Lopez, S.Y.; Mora-Ramos, M.E.; Duque, C.A.

    2009-01-01

    The photoluminescence energy transitions in GaAs-Ga 1-x Al x As coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.

  5. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-08-31

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

  6. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    International Nuclear Information System (INIS)

    Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-01-01

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

  7. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  8. Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Kundys, D., E-mail: dmytro.kundys@manchester.ac.uk; Sutherland, D.; Badcock, T. J.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory group, Tyndall National Institute, Lee Maltings, Cork (Ireland); Oehler, F.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS (United Kingdom)

    2014-03-21

    We have performed a detailed study of the impact of basal plane stacking faults (BSFs) on the optical properties of both a-plane InGaN/GaN quantum wells (QWs) and GaN template samples grown on r-sapphire. In particular, we have used polarised photoluminescence excitation spectroscopy (P-PLE) to investigate the nature of the low temperature recombination as well as extracting information on the valence band (VB) polarisation anisotropy. Our low temperature P-PLE results revealed not only excitons associated with intersubband quantum well transitions and the GaN barrier material but also a transition associated with creation of excitons in BSFs. The strength of this BSF transition varied with detection energy across the quantum well emission suggesting that there is a significant contribution to the emission line width from changes in the local electronic environment of the QWs due to interactions with BSFs. Furthermore, we observed a corresponding progressive increase in the VB splitting of the QWs as the detection energy was varied across the quantum well emission spectrum.

  9. Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

    2014-10-15

    Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

  10. An optical test bench for the precision characterization of absolute quantum efficiency for the TESS CCD detectors

    International Nuclear Information System (INIS)

    Krishnamurthy, A.; Villasenor, J.; Kissel, S.; Ricker, G.; Vanderspek, R.

    2017-01-01

    The Transiting Exoplanet Survey Satellite (TESS) will search for planets transiting bright stars with Ic ∼< 13. TESS has been selected by NASA for launch in 2018 as an Astrophysics Explorer mission, and is expected to discover a thousand or more planets that are smaller in size than Neptune. TESS will employ four wide-field optical charge-coupled device (CCD) cameras with a band-pass of 650 nm–1050 nm to detect temporary drops in brightness of stars due to planetary transits. The 1050 nm limit is set by the quantum efficiency (QE) of the CCDs. The detector assembly consists of four back-illuminated MIT Lincoln Laboratory CCID-80 devices. Each CCID-80 device consists of 2048×2048 imaging array and 2048×2048 frame store regions. Very precise on-ground calibration and characterization of CCD detectors will significantly assist in the analysis of the science data obtained in space. The characterization of the absolute QE of the CCD detectors is a crucial part of the characterization process because QE affects the performance of the CCD significantly over the redder wavelengths at which TESS will be operating. An optical test bench with significantly high photometric stability has been developed to perform precise QE measurements. The design of the test setup along with key hardware, methodology, and results from the test campaign are presented.

  11. Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Schade, L.; Schwarz, U.T. [Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79108 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, 79108 Freiburg (Germany); Wernicke, T. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technical University, Hardenbergstrasse 36, 10623 Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany)

    2011-03-15

    Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline anisotropy as a basic property of the wurtzite structure. The influence of this anisotropy on the band structure and the transition matrix elements was calculated by a k.p-method for arbitrary quantum well orientations with respect to the c-axis; results are shown here in detail. Optical polarization is a direct consequence of a broken symmetry, mainly affecting the transition matrix elements from the conduction to the valence bands. Furthermore, the strain of the InGaN quantum well strongly depends on the crystal orientation of the substrate, resulting in a valence band mixing. The composition of the eigenfunctions has emerged to be most important for the polarization dependence of strained semipolar and nonpolar InGaN QW. The matrix elements, in combination with the thermal occupation of the bands, determine the polarization of the spontaneously emitted light. Our photoluminescence measurements of nonpolar QW match well with this model. However, in contrast to calculations with standard band parameters, the two topmost subbands show a larger separation in the emitted energy. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shimosako, N., E-mail: n-shimosako@sophia.jp; Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Ema, K. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

    2015-11-07

    We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

  13. Polytypism and band alignment in ZnSe nanowires revealed by photoluminescence spectroscopy of embedded (Zn,Cd)Se quantum dots

    Science.gov (United States)

    Bieker, S.; Pfeuffer, R.; Kiessling, T.; Tarakina, N.; Schumacher, C.; Ossau, W.; Molenkamp, L. W.; Karczewski, G.

    2015-03-01

    We report on the optical characterization of single (Zn,Cd)Se quantum dots (QDs) embedded in vapor-liquid-solid-grown ZnSe nanowires (NWs). The temperature dependent quenching of the QD luminescence demonstrates that their electronic structure is comparable to that of self-assembled (Zn,Cd)Se QDs in ZnSe matrices. The photoluminescence excitation (PLE) spectrum of single nanowire QDs reveals the presence of both zinc blende (ZB) and wurtzite (WZ) crystal modifications of ZnSe in the NW shafts. PLE provides, therefore, a complementary technique to transmission electron microscopy imaging to reveal polytypism in ZnSe NWs. A transient quenching of the PL emission suggests a type II staggered band alignment at the ZB/WZ interface in our ZnSe NWs.

  14. In-plane magneto-photoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    KIM,YONGMIN; PERRY,C.H.; SIMMONS,JERRY A.; KLEM,JOHN F.

    2000-05-11

    In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.

  15. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

    KAUST Repository

    Marcinkevičius, S.

    2014-09-15

    © 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

  16. Improved photoluminescence quantum yield and stability of CdSe-TOP, CdSe-ODA-TOPO, CdSe/CdS and CdSe/EP nanocomposites

    Science.gov (United States)

    Wei, Shutian; Zhu, Zhilin; Wang, Zhixiao; Wei, Gugangfen; Wang, Pingjian; Li, Hai; Hua, Zhen; Lin, Zhonghai

    2016-07-01

    Size-controllable monodisperse CdSe nanocrystals with different organic capping were prepared based on the hot-injection method. The effective separation of nucleation and growth was achieved by rapidly mixing two highly reactive precursors. As a contrast, we prepared CdSe/CdS nanocrystals (NCs) successfully based on the selective ion layer adsorption and reaction (SILAR) technique. This inorganic capping obtained higher photoluminescence quantum yield (PLQY) of 59.3% compared with organic capping of 40.8%. Furthermore, the CdSe-epoxy resin (EP) composites were prepared by adopting a flexible ex situ method, and showed excellent stability in the ambient environment for one year. So the composites with both high PLQY of nanocrystals and excellent stability are very promising to device application.

  17. Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2013-07-01

    Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

  18. Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

    2016-04-15

    We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

  19. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

    2015-07-27

    We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

  20. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Energy Technology Data Exchange (ETDEWEB)

    Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S. [Department of Electronic Science, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2014-01-28

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10–80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e{sub 1}) to the heavy hole band (hh{sub 1}). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of

  1. Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

    Energy Technology Data Exchange (ETDEWEB)

    Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

    2001-03-08

    This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

  2. Photoluminescence spectral study of single cadmium selenide/zinc sulfide colloidal nanocrystals in poly(methyl methacrylate) and quantum dots molecules

    Science.gov (United States)

    Shen, Yaoming

    Quantum dots (QDs)and Nano-crystals (NCs) have been studies for decades. Because of the nanoscale quantum confinement, delta shape like energy density states and narrowband emitters properties, they hold great promise for numerous optoelectronics and photonics applications. They could be used for tunable lasers, white LED, Nano-OLED, non-volatile memory and solar cells. They are also the most promising candidates for the quantum computing. The benefits for NCs over QDs is that NCs can be incorporated into a variety of polymers as well as thin films of bulk semiconductors. These exceptional flexibility and structural control distinguish NCs from the more traditional QD structures fabricated using epitaxial growth techniques. In my research of work, I studied the photoluminescence (PL) and absorption character of ensemble NCs incorporated in Polymethyl methacrylate (PMMA). To understand the behavior of the NCs in PMMA, it is important to measure a singe NC to avoid the inhomogenous broading of many NCs. So I particularly studied the behavior of a single NC in PMMA matrix. A microphotoluminescence setup to optically isolate a single nanocrystal is used. Random spectral shift and blinking behavior (on and off) are found. Addition to that, two color spectral shifting, is a major phenomena found in the system. Other interesting results such as PL intensity changes (decreasing or increasing with time) and quenching effect are observed and explained too. From the correlation function, we can distinguish the phonon replicas. The energy of these phonons can be calculated very accurately from the experiment result. The Huang-Rhys factors can be estimated too. Self-assembled semiconductor quantum dots (QDs), from highly strained-layer heteroepitaxy in the Stranski-Krastanow (S-K) growth mode, have been intensively studied because of the delta-function-like density of states, which is significant for optoelectronic applications. Spontaneous formation of semiconductor quantum

  3. Quantum well effect in bulk PbI(2) crystals revealed by the anisotropy of photoluminescence and Raman spectra.

    Science.gov (United States)

    Baltog, I; Baibarac, M; Lefrant, S

    2009-01-14

    On subjecting a bulk 2H-PbI(2) crystal to vacuum annealing at 500 K followed by a sudden cooling at liquid nitrogen temperature stacking faults are generated that separate distinct layers of nanometric thickness in which different numbers of I-Pb-I atomic layers are bundled together. Such structures, containing two, three, four, five etc I-Pb-I atomic layers, behave as quantum wells of different widths. The signature of such a transformation is given by a shift towards higher energies of the fundamental absorption edge, which is experimentally revealed by specific anisotropies in the photoluminescence and Raman spectra. The quantum confining effect is made visible by specific variations of a wide extra-excitonic band (G) at 2.06 eV that originates in the radiative recombination of carriers (electrons and holes), trapped on the surface defects. The excitation spectrum of the G band, with p polarized exciting light, reveals a fine structure comprised of narrow bands at 2.75, 2.64, 2.59 and 2.56 eV, which are associated with the PbI(2) quantum wells formed from two, three, four and five I-Pb-I atomic layers of 0.7 nm thickness. Regardless of the polarization state of the laser exciting light of 514.5 nm (2.41 eV), which is close to the band gap energy of PbI(2) (2.52 eV), the Raman scattering on bulk as-grown PbI(2) crystals has the character of a resonant process. For p polarized exciting light, the Raman scattering process on vacuum annealed PbI(2) becomes non-resonant. This originates from the quantum well structures generated inside the crystal, whose band gap energies are higher than the energy of the exciting light.

  4. Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

    Science.gov (United States)

    Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

    2013-06-01

    Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

  5. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    CERN Document Server

    Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

  6. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    International Nuclear Information System (INIS)

    Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

  7. Photoluminescence of Diamondoid Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

    2012-04-03

    The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

  8. Time-dependent photoluminescence spectroscopy as a tool to measure the ligand exchange kinetics on a quantum dot surface

    NARCIS (Netherlands)

    Koole, R.; Schapotschnikow, P.Z.; de Mello Donega, C.; Vlugt, T.J.H.; Meijerink, A.

    2008-01-01

    The exchange kinetics of native ligands that passivate CdSe quantum dots (hexadecylamine (HDA), trioctylphosphine oxide (TOPO), and trioctylphosphine (TOP)) by thiols is followed in situ. This is realized by measuring, in real-time, the decrease in emission intensity of the QDs upon addition of

  9. Surface plasmon inhibited photo-luminescence activation in CdSe/ZnS core-shell quantum dots

    Czech Academy of Sciences Publication Activity Database

    Chen, J.; Žídek, Karel; Abdellah, M.; Al-Marri, M.J.; Zheng, K.; Pullerits, T.

    2016-01-01

    Roč. 28, č. 25 (2016), č. článku 254001. ISSN 0953-8984 Institutional support: RVO:61389021 Keywords : surface plasmon * gold nanorods * quantum dots * energy transfer * photoactivation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.649, year: 2016 http://dx.doi.org/10.1088/0953-8984/28/25/254001

  10. Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen InxGa1−xNyAs1−y/GaAs cylindrically shaped quantum dots

    International Nuclear Information System (INIS)

    Duque, C.M.; Morales, A.L.; Mora-Ramos, M.E.; Duque, C.A.

    2014-01-01

    An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In x Ga 1−x N y As 1−y /GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs

  11. Exciton-related nonlinear optical response and photoluminescence in dilute nitrogen In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs cylindrically shaped quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Duque, C.M.; Morales, A.L. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Mora-Ramos, M.E. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia); Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A. [Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín (Colombia)

    2014-10-15

    An investigation of the effects of the dilute nitrogen contents in the exciton states of cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots is presented. The exciton states in the system are obtained within the effective mass theory and the band anti-crossing model. Exciton-related nonlinear optical absorption and refractive index change, as well as excitonic photoluminescence are studied with the help of the calculated exciton states. - Highlights: • Theoretical study of excitons in cylindrical In{sub x}Ga{sub 1−x}N{sub y}As{sub 1−y}/GaAs quantum dots. • Calculations of binding energy for different configurations of electron-hole pairs. • Nonlinear optical absorption and refractive index changes. • Dependence of photoluminescence energy transitions with several inputs.

  12. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    International Nuclear Information System (INIS)

    Shimomura, K.; Kamiya, I.

    2015-01-01

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers

  13. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, K., E-mail: sd12502@toyota-ti.ac.jp; Kamiya, I., E-mail: kamiya@toyota-ti.ac.jp [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-02-23

    Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum dots (QDs) grown on GaAs(001) is observed at room temperature (RT) and 4 K using a bilayer structure with thin cap. The PL peak has been known to redshift with decreasing cap layer thickness, although accompanying intensity decrease and peak broadening. With our strain-controlled bilayer structure, the PL intensity can be comparable to the ordinary QDs while realizing peak emission wavelength of 1.61 μm at 4 K and 1.73 μm at RT. The key issue lies in the control of strain not only in the QDs but also in the cap layer. By combining with underlying seed QD layer, we realize strain-driven bandgap engineering through control of strain in the QD and cap layers.

  14. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  15. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    Science.gov (United States)

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

    2018-03-01

    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

  16. Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    KAUST Repository

    Tangi, Malleswararao

    2018-03-09

    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

  17. A novel synthesis of magnetic and photoluminescent graphene quantum dots/MFe2O4 (M = Ni, Co) nanocomposites for catalytic application

    Science.gov (United States)

    Naghshbandi, Zhwan; Arsalani, Nasser; Zakerhamidi, Mohammad Sadegh; Geckeler, Kurt E.

    2018-06-01

    In recent year, the research is focused on the nanostructured catalyst with increase physiochemical properties. Herein, Different magnetic nanocomposites of graphene quantum dots (GQD) and MFe2O4 (M = Ni, Co) with intrinsic photoluminescent and ferromagnetic properties were synthesized by a convenient co-precipitation method. The structure, morphology, and properties of these nanocomposites as well as the catalytic activity of the nanocomposites for the reduction of p-nitrophenol were investigated. The catalytic activity was found to be in the order of NiFe2O4/GQD > CoFe2O4/GQD > NiFe2O4 > CoFe2O4. The sample NiFe2O4/GQD exhibited the best catalytic activity with an apparent rate constant of 3.56 min-1 and a reduction completion time to p-aminophenol of 60 s. The catalysts can be reused by a magnetic field and display good stability, which can be recycled for six successive experiment with a conversion percentage of more than 95%. These results demonstrate that the nanocomposite NiFe2O4/GQD is an efficient catalyst for the reduction of p-nitrophenol compound. Also, the new nanocomposites have shown a significant reduction in the direct and indirect energy bandgaps when compared to pure GQD and the corresponding magnetic metal oxides.

  18. Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

    International Nuclear Information System (INIS)

    Nakayama, M.; Iguchi, Y.; Nomura, K.; Hashimoto, J.; Yamada, T.; Takagishi, S.

    2007-01-01

    We have investigated photoluminescence (PL) dynamics related to localized states in In x Ga 1-x As 1-y N y /GaAs single-quantum wells (SQWs) with the constant In content of x=0.32 and various N contents of y=0,0.004,and0.008. In order to determine the intrinsic band-edge energy, we used photoreflectance (PR) spectroscopy that is sensitive to the optical transitions at critical points. From systematic measurements of the PL and PR spectra, it is demonstrated that the slight incorporation of nitrogen considerably disorders the band-edge states of the InGaAsN SQWs, resulting from formation of localized states, so-called band-tail states. We find that the PL-decay profile related to the localized states generally exhibits a stretched exponential behavior peculiar to a disordered system at low temperatures, which means that randomness of alloy potential fluctuations including nitrogen dominates the PL dynamics

  19. Energy transfer and visible-infrared quantum cutting photoluminescence modification in Tm-Yb codoped YPO(4) inverse opal photonic crystals.

    Science.gov (United States)

    Wang, Siqin; Qiu, Jianbei; Wang, Qi; Zhou, Dacheng; Yang, Zhengwen

    2015-08-01

    YPO4:  Tm, Yb inverse opal photonic crystals were successfully synthesized by the colloidal crystal templates method, and the visible-infrared quantum cutting (QC) photoluminescence properties of YPO4:  Tm, Yb inverse opal photonic crystals were investigated. We obtained tetragonal phase YPO4 in all the samples when the samples sintered at 950°C for 5 h. The visible emission intensity of Tm3+ decreased significantly when the photonic bandgap was located at 650 nm under 480 nm excitation. On the contrary, the QC emission intensity of Yb3+ was enhanced as compared with the no photonic bandgap sample. When the photonic bandgap was located at 480 nm, the Yb3+ and Tm3+ light-emitting intensity weakened at the same time. We demonstrated that the energy transfer between Tm3+ and Yb3+ is enhanced by the suppression of the red emission of Tm3+. Additionally, the mechanisms for the influence of the photonic bandgap on the energy transfer process of the Tm3+, Yb3+ codoped YPO4 inverse opal are discussed.

  20. Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

    International Nuclear Information System (INIS)

    Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Pucicki, D.; Tlaczala, M.; Fischer, M.; Marquardt, B.; Forchel, A.

    2007-01-01

    InAs quantum dots (QDs) with GaInNAs barriers grown on (001) GaAs substrate by molecular beam epitaxy have been studied by contactless electroreflectance (CER) and photoluminescence (PL) spectroscopies. It has been observed that the overgrowth of self-organized InAs QDs with GaInNAs layers effectively tunes the QD emission to the 1.3 μm spectral region. In case of PL spectra only one peak related to QD emission has been observed. In the case of CER spectra, in addition to a CER feature corresponding to the QD ground state, a rich spectrum of CER resonances related to optical transitions in InAs/GaInNAs/GaAs QW has been observed. It has been concluded that the application of GaInNAs instead InGaAs leads to better control of emission wavelength from InAs QDs since strains in GaInNAs can be tuned from compressive to tensile. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

    2010-01-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  2. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

    International Nuclear Information System (INIS)

    Hadj Alouane, M. H.; Ilahi, B.; Maaref, H.; Salem, B.; Aimez, V.; Morris, D.; Turala, A.; Regreny, P.; Gendry, M.

    2010-01-01

    We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

  3. Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

    Science.gov (United States)

    Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

    The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

  4. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  5. Low cost 3D-printing used in an undergraduate project: an integrating sphere for measurement of photoluminescence quantum yield

    International Nuclear Information System (INIS)

    Tomes, John J; Finlayson, Chris E

    2016-01-01

    We report upon the exploitation of the latest 3D printing technologies to provide low-cost instrumentation solutions, for use in an undergraduate level final-year project. The project addresses prescient research issues in optoelectronics, which would otherwise be inaccessible to such undergraduate student projects. The experimental use of an integrating sphere in conjunction with a desktop spectrometer presents opportunities to use easily handled, low cost materials as a means to illustrate many areas of physics such as spectroscopy, lasers, optics, simple circuits, black body radiation and data gathering. Presented here is a 3rd year undergraduate physics project which developed a low cost (£25) method to manufacture an experimentally accurate integrating sphere by 3D printing. Details are given of both a homemade internal reflectance coating formulated from readily available materials, and a robust instrument calibration method using a tungsten bulb. The instrument is demonstrated to give accurate and reproducible experimental measurements of luminescence quantum yield of various semiconducting fluorophores, in excellent agreement with literature values. (paper)

  6. Low cost 3D-printing used in an undergraduate project: an integrating sphere for measurement of photoluminescence quantum yield

    Science.gov (United States)

    Tomes, John J.; Finlayson, Chris E.

    2016-09-01

    We report upon the exploitation of the latest 3D printing technologies to provide low-cost instrumentation solutions, for use in an undergraduate level final-year project. The project addresses prescient research issues in optoelectronics, which would otherwise be inaccessible to such undergraduate student projects. The experimental use of an integrating sphere in conjunction with a desktop spectrometer presents opportunities to use easily handled, low cost materials as a means to illustrate many areas of physics such as spectroscopy, lasers, optics, simple circuits, black body radiation and data gathering. Presented here is a 3rd year undergraduate physics project which developed a low cost (£25) method to manufacture an experimentally accurate integrating sphere by 3D printing. Details are given of both a homemade internal reflectance coating formulated from readily available materials, and a robust instrument calibration method using a tungsten bulb. The instrument is demonstrated to give accurate and reproducible experimental measurements of luminescence quantum yield of various semiconducting fluorophores, in excellent agreement with literature values.

  7. Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

    International Nuclear Information System (INIS)

    Jin, Hui; Gui, Rijun; Sun, Jie; Wang, Yanfeng

    2016-01-01

    Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn"2"+:ZnS quantum dots (QDs) with MoS_2 QDs and photosensitive nitric oxide (NO) donors (Fe_4S_3(NO)_7"−, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn"2"+:ZnS QDs, but it produced almost no impact on the TPEPL of MoS_2 QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R"2 = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn"2"+:ZnS@SiO_2/MoS_2-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

  8. A novel ascorbic acid sensor based on the Fe3+/Fe2+ modulated photoluminescence of CdTe quantum dots@SiO2 nanobeads.

    Science.gov (United States)

    Ma, Qiang; Li, Yang; Lin, Zi-Han; Tang, Guangchao; Su, Xing-Guang

    2013-10-21

    In this paper, CdTe quantum dot (QD)@silica nanobeads were used as modulated photoluminescence (PL) sensors for the sensing of ascorbic acid in aqueous solution for the first time. The sensor was developed based on the different quenching effects of Fe(2+) and Fe(3+) on the PL intensity of the CdTe QD@ silica nanobeads. Firstly, the PL intensity of the CdTe QDs was quenched in the presence of Fe(3+). Although both Fe(2+) and Fe(3+) could quench the PL intensity of the CdTe QDs, the quenching efficiency were quite different for Fe(2+) and Fe(3+). The PL intensity of the CdTe QD@silica nanobeads can be quenched by about 15% after the addition of Fe(3+) (60 μmol L(-1)), while the PL intensity of the CdTe QD@silica nanobeads can be quenched about 49% after the addition of Fe(2+) (60 μmol L(-1)). Therefore, the PL intensity of the CdTe QD@silica nanobeads decreased significantly when Fe(3+) was reduced to Fe(2+) by ascorbic acid. To confirm the strategy of PL modulation in this sensing system, trace H2O2 was introduced to oxidize Fe(2+) to Fe(3+). As a result, the PL intensity of the CdTe QD@silica nanobeads was partly recovered. The proposed sensor could be used for ascorbic acid sensing in the concentration range of 3.33-400 μmol L(-1), with a detection limit (3σ) of 1.25 μmol L(-1) The feasibility of the proposed sensor for ascorbic acid determination in tablet samples was also studied, and satisfactory results were obtained.

  9. Shell-Dependent Photoluminescence Studies Provide Mechanistic Insights into the Off-Grey-On Transitions of Blinking Quantum Dots.

    Science.gov (United States)

    Gao, Feng; Bajwa, Pooja; Nguyen, Anh; Heyes, Colin D

    2017-03-28

    The majority of quantum dot (QD) blinking studies have used a model of switching between two distinct fluorescence intensity levels, "on" and "off". However, a distinct intermediate intensity level has been identified in some recent reports, a so-called "grey" or "dim" state, which has brought this binary model into question. While this grey state has been proposed to result from the formation of a trion, it is still unclear under which conditions it is present in a QD. By performing shell-dependent blinking studies on CdSe QDs, we report that the populations of the grey state and the on state are strongly dependent on both the shell material and its thickness. We found that adding a ZnS shell did not result in a significant population of the grey state. Using ZnSe as the shell material resulted in a slightly higher population of the grey state, although it was still poorly resolved. However, adding a CdS shell resulted in the population of a grey state, which depended strongly on its thickness up to 5 ML. Interestingly, while the frequency of transitions to and from the grey state showed a very strong dependence on CdS shell thickness, the brightness of and the dwell time in the grey state did not. Moreover, we found that the grey state acts as an on-pathway intermediate state between on and off states, with the thickness of the shell determining the transition probability between them. We also identified two types of blinking behavior in QDs, one that showed long-lived but lower intensity on states and another that showed short-lived but brighter on states that also depended on the shell thickness. Intensity-resolved single QD fluorescence lifetime analysis was used to identify the relationship between the various exciton decay pathways and the resulting intensity levels. We used this data to propose a model in which multiple on, grey, and off states exist whose equilibrium populations vary with time that give rise to the various intensity levels of single QDs

  10. Absolute advantage

    NARCIS (Netherlands)

    J.G.M. van Marrewijk (Charles)

    2008-01-01

    textabstractA country is said to have an absolute advantage over another country in the production of a good or service if it can produce that good or service using fewer real resources. Equivalently, using the same inputs, the country can produce more output. The concept of absolute advantage can

  11. Novel quantum criticality in CeRu2Si2 near absolute zero observed by thermal expansion and magnetostriction.

    Science.gov (United States)

    Yoshida, J; Abe, S; Takahashi, D; Segawa, Y; Komai, Y; Tsujii, H; Matsumoto, K; Suzuki, H; Onuki, Y

    2008-12-19

    We report linear thermal expansion and magnetostriction measurements for CeRu2Si2 in magnetic fields up to 52.6 mT and at temperatures down to 1 mK. At high temperatures, this compound showed Landau-Fermi-liquid behavior: The linear thermal expansion coefficient and the magnetostriction coefficient were proportional to the temperature and magnetic field, respectively. In contrast, a pronounced non-Fermi-liquid effect was found below 50 mK. The negative contribution of thermal expansion and magnetostriction suggests the existence of an additional quantum critical point.

  12. Ratiometric two-photon excited photoluminescence of quantum dots triggered by near-infrared-light for real-time detection of nitric oxide release in situ

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hui [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Gui, Rijun, E-mail: guirijun@qdu.edu.cn [Shandong Sino-Japanese Center for Collaborative Research of Carbon Nanomaterials, Collaborative Innovation Center for Marine Biomass Fiber Materials and Textiles, College of Chemistry and Chemical Engineering, Laboratory of Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Shandong 266071 (China); Sun, Jie; Wang, Yanfeng [Institute of Materia Medica, Shandong Academy of Medical Sciences, Jinan 250062 (China)

    2016-05-30

    Probe-donor integrated nanocomposites were developed from conjugating silica-coated Mn{sup 2+}:ZnS quantum dots (QDs) with MoS{sub 2} QDs and photosensitive nitric oxide (NO) donors (Fe{sub 4}S{sub 3}(NO){sub 7}{sup −}, RBS). Under excitation with near-infrared (NIR) light at 808 nm, the Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites showed the dual-emissive two-photon excited photoluminescence (TPEPL) that induced RBS photolysis to release NO in situ. NO caused TPEPL quenching of Mn{sup 2+}:ZnS QDs, but it produced almost no impact on the TPEPL of MoS{sub 2} QDs. Hence, the nanocomposites were developed as a novel QDs-based ratiometric TPEPL probe for real-time detection of NO release in situ. The ratiometric TPEPL intensity is nearly linear (R{sup 2} = 0.9901) with NO concentration in the range of 0.01∼0.8 μM, which corresponds to the range of NO release time (0∼15 min). The detection limit was calculated to be approximately 4 nM of NO. Experimental results confirmed that this novel ratiometric TPEPL probe possessed high selectivity and sensitivity for the detection of NO against potential competitors, and especially showed high detection performance for NIR-light triggered NO release in tumor intracellular microenvironments. These results would promote the development of versatile probe-donor integrated systems, also providing a facile and efficient strategy to real-time detect the highly controllable drug release in situ, especially in physiological microenvironments. - Highlights: • Mn{sup 2+}:ZnS@SiO{sub 2}/MoS{sub 2}-RBS nanocomposites were developed as a novel ratiometric two-photon excited fluorescence probe. • This probe could conduct real-time detection of nitric oxide release in situ. • High feasibility of this probe was confirmed in tumor intracellular microenvironments.

  13. Exciton lifetime and spin dynamics in type-I In1−xAlxAs/Ga0.67Al0.33As quantum dots: Photoluminescence and pump-probe experiments

    International Nuclear Information System (INIS)

    Ben Daly, A.; Bernardot, F.; Barisien, T.; Galopin, E.; Lemaître, A.; Maaref, M.A.; Testelin, C.

    2015-01-01

    The exciton lifetime and spin relaxation have been studied in self-assembled In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dots (QDs). Time-resolved photoluminescence and resonant pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. At low temperature, a long exciton-spin relaxation time has been measured, in agreement with the QD zero-dimensional confinement and the quenching of the relaxation mechanisms. The existence of a quasi-2D regime, in sample with a high QD density, has been observed. The importance of thermally-activated processes toward excited states is also evidenced, for QDs with different compositions and sizes. - Highlights: • The exciton lifetime and spin relaxation have been studied in In 1−x Al x As/Ga 0.67 Al 0.33 As quantum dot (QD). • Time-resolved photoluminescence (TRPL) and pump-probe measurements were performed, at variable temperature and for different QD aluminium compositions. • From the PL decay time, several thermal activation processes, related to 0D or 2D regime, or dependending on collective mechanisms. • The importance of thermal activated processes toward excited states is also evidenced, for QD with different compositions and sizes

  14. Photoluminescent properties of single crystal diamond microneedles

    Science.gov (United States)

    Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

    2018-01-01

    Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

  15. Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

    Directory of Open Access Journals (Sweden)

    Tsung-Han Tsai

    2015-01-01

    Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

  16. Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

    DEFF Research Database (Denmark)

    Machida, S.; Tadakuma, T.; Satake, A.

    2005-01-01

    Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between...... the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent...... is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. ©2005 American Institute of Physics...

  17. The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

    International Nuclear Information System (INIS)

    Selvig, E; Myrvaagnes, G; Bugge, R; Haakenaasen, R; Fimland, B O

    2006-01-01

    Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb multiple-quantum-well (MQW) structures. Growth has been interrupted at the interfaces between the wells and the barriers. During the growth interruptions, the interfaces have been exposed to Sb x (x=1, 2) and As 2 fluxes. The structures have been studied using high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL). The As content in the interface layers has been found to have a large impact on the HRXRD curves. The As content in the interface layers has been determined by simulation of HRXRD rocking curves. We also show how highly strained interfaces cause more satellite peaks to appear in HRXRD rocking curves. PL spectra show that interrupting growth at the interfaces between wells and barriers and exposing the interfaces to an Sb soak result in flatter interfaces

  18. Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1-xSe/Znx'Cdy'Mg1-x'-y'Se asymmetric coupled quantum well structure

    International Nuclear Information System (INIS)

    Wu, J.D.; Huang, Y.S.; Lin, D.Y.; Charles, W.O.; Shen, A.; Tamargo, M.C.; Tiong, K.K.

    2011-01-01

    Research highlights: → We report a detailed study of a ZnxCd 1-x Se/Znx'Cdy'Mg 1-x '-y'Se asymmetric coupled quantum well structure by using temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) techniques. → The PL peak position yielded information of the fundamental excitonic recombinations. → Analysis of the CER spectra led to the identification of various interband transitions. →Study of the temperature dependence of the excitonic transition energies indicated that main influence of temperature on the quantized transitions is through temperature dependence of the constituent material band gap in the well. - Abstract: Temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) were used to characterize a Zn x Cd 1-x Se/Zn x' Cd y' Mg 1-x'-y' Se asymmetric coupled quantum well (ACQW) structure in the range of 10-300 K. The PL peak position yielded information of the fundamental excitonic recombinations. A detailed analysis of the CER spectra led to the identification of various interband transitions. The intersubband transitions were then estimated and found to be in a good agreement with the previous report of Fourier-transform infrared absorption measurements. At low temperature, the PL spectra of the sample showed an asymmetric behavior with an exponential tail at the lower-energy side and were attributed to the localized excitonic recombinations due to potential fluctuations. Detailed study of the temperature dependence of the excitonic transition energies indicated that the main influence of temperature on the quantized transitions is through the temperature dependence of the band gap of the constituent material in the well.

  19. Absolute Summ

    Science.gov (United States)

    Phillips, Alfred, Jr.

    Summ means the entirety of the multiverse. It seems clear, from the inflation theories of A. Guth and others, that the creation of many universes is plausible. We argue that Absolute cosmological ideas, not unlike those of I. Newton, may be consistent with dynamic multiverse creations. As suggested in W. Heisenberg's uncertainty principle, and with the Anthropic Principle defended by S. Hawking, et al., human consciousness, buttressed by findings of neuroscience, may have to be considered in our models. Predictability, as A. Einstein realized with Invariants and General Relativity, may be required for new ideas to be part of physics. We present here a two postulate model geared to an Absolute Summ. The seedbed of this work is part of Akhnaton's philosophy (see S. Freud, Moses and Monotheism). Most important, however, is that the structure of human consciousness, manifest in Kenya's Rift Valley 200,000 years ago as Homo sapiens, who were the culmination of the six million year co-creation process of Hominins and Nature in Africa, allows us to do the physics that we do. .

  20. Brightly Luminescent and Color-Tunable Colloidal CH3NH3PbX3 (X = Br, I, Cl) Quantum Dots: Potential Alternatives for Display Technology.

    Science.gov (United States)

    Zhang, Feng; Zhong, Haizheng; Chen, Cheng; Wu, Xian-gang; Hu, Xiangmin; Huang, Hailong; Han, Junbo; Zou, Bingsuo; Dong, Yuping

    2015-04-28

    Organometal halide perovskites are inexpensive materials with desirable characteristics of color-tunable and narrow-band emissions for lighting and display technology, but they suffer from low photoluminescence quantum yields at low excitation fluencies. Here we developed a ligand-assisted reprecipitation strategy to fabricate brightly luminescent and color-tunable colloidal CH3NH3PbX3 (X = Br, I, Cl) quantum dots with absolute quantum yield up to 70% at room temperature and low excitation fluencies. To illustrate the photoluminescence enhancements in these quantum dots, we conducted comprehensive composition and surface characterizations and determined the time- and temperature-dependent photoluminescence spectra. Comparisons between small-sized CH3NH3PbBr3 quantum dots (average diameter 3.3 nm) and corresponding micrometer-sized bulk particles (2-8 μm) suggest that the intense increased photoluminescence quantum yield originates from the increase of exciton binding energy due to size reduction as well as proper chemical passivations of the Br-rich surface. We further demonstrated wide-color gamut white-light-emitting diodes using green emissive CH3NH3PbBr3 quantum dots and red emissive K2SiF6:Mn(4+) as color converters, providing enhanced color quality for display technology. Moreover, colloidal CH3NH3PbX3 quantum dots are expected to exhibit interesting nanoscale excitonic properties and also have other potential applications in lasers, electroluminescence devices, and optical sensors.

  1. Synthesis of a new ONNO donor tetradentate schiff base ligand and binuclear Cu(II) complex: Quantum chemical, spectroscopic and photoluminescence investigations

    International Nuclear Information System (INIS)

    Sarıoğlu, Ahmet Oral; Ceylan, Ümit; Yalçın, Şerife Pınar; Sönmez, Mehmet; Ceyhan, Gökhan; Aygün, Muhittin

    2016-01-01

    The Schiff base compound 3,3′-(1,4-phenylimino)-bis-[1,3-bis-(4-methoxyphenyl) propan-1-one)], formulated as C 40 H 36 N 2 O 6, and its Cu(II) complex were synthesized and characterized by analytical analysis, various spectral techniques such as FT-IR, NMR, UV–vis, magnetic measurements and molar conductivity. Thermo gravimetric analysis (TGA and DTA) carried out to obtain information about its thermal stability. The molecular structure and spectroscopic properties of the ligand were obtained with FT-IR, 1 H and 13 C NMR, UV–vis investigations as experimentally and compared with theoretical results obtained from DFT/B3LYP/6-311++G(d,p) basis set. In addition to molecular calculations of the title compound, molecular electrostatic potential (MEP), dipole moments, atomic charges, HOMO–LUMO, NLO and NBO analysis were computed. The calculated results show that the optimized geometry can well reproduce the crystal structure parameters, and the theoretical vibrational frequencies, 1 H and 13 C NMR chemical shifts show good agreement with experimental values. Photoluminescence properties of the ligand and its Cu(II) complex were examined. - Highlights: • FT-IR and 1 H– 13 C NMR spectra were recorded and compared with the theoretical results. • The photoluminescence properties were studied. • NLO, NBO analysis of the molecule were studied. • HOMO and LUMO energies, MEP distribution of the molecule were calculated.

  2. Defect induced photoluminescence in MoS2 quantum dots and effect of Eu3+/Tb3+ co-doping towards efficient white light emission

    Science.gov (United States)

    Haldar, Dhrubaa; Ghosh, Arnab; Bose, Saptasree; Mondal, Supriya; Ghorai, Uttam Kumar; Saha, Shyamal K.

    2018-05-01

    Intensive research has been carried out on optical properties of MoS2 quantum dots for versatile applications in photo catalytic, sensing and optoelectronic devices. However, white light generation from MoS2 quantum dots particularly using doping effect is relatively unexplored. Herein we report successful synthesis of Europium (Eu)/Terbium (Tb) co-doped MoS2 quantum dots to achieve white light for potential applications in optoelectronic devices. The dopant ions are introduced into the host lattice to retain the emission colors to cover the entire range of visible light of solar spectrum. Perfect white light (CIE = 0.31, 0.33) with high intensity (quantum yield = 28.29%) is achieved in these rare earth elements co-doped quantum dot system. A new peak is observed in the NIR region which is attributed to the defects present in MoS2 quantum dots. Temperature dependent study has been carried out to understand the origin of this new peak in the NIR region. It is seen that the 'S' defects in the QDs cause the appearance of this peak which shows a blue shift at higher temperature.

  3. Blue photoluminescent carbon nanodots from limeade

    Energy Technology Data Exchange (ETDEWEB)

    Suvarnaphaet, Phitsini [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Tiwary, Chandra Sekhar [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Wetcharungsri, Jutaphet; Porntheeraphat, Supanit [NECTEC, National Science and Technology Development Agency (NSTDA), Thailand Science Park, Pathumthani 12120 (Thailand); Hoonsawat, Rassmidara [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Ajayan, Pulickel Madhavapanicker [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Tang, I-Ming [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); Department of Material Science, Faculty of Science, Kasetsart University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Asanithi, Piyapong, E-mail: asanithi@hotmail.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand)

    2016-12-01

    Carbon-based photoluminescent nanodot has currently been one of the promising materials for various applications. The remaining challenges are the carbon sources and the simple synthetic processes that enhance the quantum yield, photostability and biocompatibility of the nanodots. In this work, the synthesis of blue photoluminescent carbon nanodots from limeade via a single-step hydrothermal carbonization process is presented. Lime carbon nanodot (L-CnD), whose the quantum yield exceeding 50% for the 490 nm emission in gram-scale amounts, has the structure of graphene core functionalized with the oxygen functional groups. The micron-sized flake of the as-prepared L-CnD powder exhibits multicolor emission depending on an excitation wavelength. The L-CnDs are demonstrated for rapidly ferric-ion (Fe{sup 3+}) detection in water compared to Fe{sup 2+}, Cu{sup 2+}, Co{sup 2+}, Zn{sup 2+}, Mn{sup 2+} and Ni{sup 2+} ions. The photoluminescence quenching of L-CnD solution under UV light is used to distinguish the Fe{sup 3+} ions from others by naked eyes as low concentration as 100 μM. Additionally, L-CnDs provide exceptional photostability and biocompatibility for imaging yeast cell morphology. Changes in morphology of living yeast cells, i.e. cell shape variation, and budding, can be observed in a minute-period until more than an hour without the photoluminescent intensity loss. - Highlights: • Photoluminescent carbon nanodots are synthesized from limeade. • The quantum yield of lime carbon nanodots is higher than 50%. • The lime carbon nanodots can be applied for detecting of Fe{sup 3+} ions and for imaging living yeast cells.

  4. Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

    Science.gov (United States)

    Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

    2017-07-20

    High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

  5. Luminous composite ultrathin films of CdTe quantum dots/silk fibroin co-assembled with layered doubled hydroxide: Enhanced photoluminescence and biosensor application

    Directory of Open Access Journals (Sweden)

    Muhammad Sohail Haroone

    2018-06-01

    Full Text Available Quantum dots (QDs luminescent films are extensively applied to optoelectronics and optical devices. However, QDs aggregation results in the quenching of their fluorescence property which limits their practical applications to a greater extent. In order to resolve this issue, 3-mercaptopropionic acid (3-MPA functionalized Cadmium Tellurium (CdTe QDs were stabilized by silk fibroin (SB and co-assembled with layered doubled hydroxide (LDH to form (QDs@SF/LDHn ultrathin films (UTFs via the layer-by-layer (LBL technique. UV–Vis absorption and fluorescence spectroscopy showed a stepwise and normal growth of the films upon increasing the number of deposition cycles. XRD and AFM studies confirmed the formation of a periodic layered structure and regular surface morphology of the thin films. As compared to (CdTe QDs/LDHnUTFs, the (CdTe QDs@SF/LDHnUTFs displayed fluorescence enhancement and longer fluorescent lifetime, both in solid states and aqueous solutions. Furthermore compared with the solution state, the fluorescence enhancement of SF-RC and SF-β are, respectively, 7 times and 17 times in the (CdTe QDs@SF/LDHn UTFs, indicating that the LDH nanosheets favor the fluorescence enhancement effect on the CdTe QDs@SF. The fabricated materials displayed fluorescence response to a biological molecule such as immune globulin, lgG. Thus, the (CdTe QDs@SF/LDHn UTFs has a potential to be used as biosensor. Keywords: CdTe quantum dots, Silk fibroin, Layered doubled hydroxide, Co-assembly, Fluorescence enhancement

  6. The influence of capping thioalkyl acid on the growth and photoluminescence efficiency of CdTe and CdSe quantum dots

    International Nuclear Information System (INIS)

    Aldeek, Fadi; Lambert, Jacques; Balan, Lavinia; Schneider, Raphael

    2008-01-01

    The influence of thioalkyl acid ligand was evaluated during aqueous synthesis at 100 deg. C and under hydrothermal conditions (150 deg. C) of CdTe and CdSe quantum dots (QDs). Experiments performed with 3-mercaptopropionic acid (MPA), 6-mercaptohexanoic acid (MHA) and 11-mercaptoundecanoic acid (MUA) demonstrated that the use of MHA and MUA allowed for the preparation of very small nanoparticles (0.6-2.5 nm) in carrying out the reaction under atmospheric pressure or in an autoclave and that the photophysical properties of QDs were dependent on the ligand and on the synthesis conditions. The influence of various experimental conditions, including the Te-to-Cd ratio, temperature, and precursor concentration, on the growth rate of CdTe or CdSe QDs has been systematically investigated. The fluorescence intensities of CdTe QDs capped with MPA, MHA, or MUA versus pH were also found to be related to the surface coverage of the nanoparticles.

  7. Aptamer and 5-fluorouracil dual-loading Ag2S quantum dots used as a sensitive label-free probe for near-infrared photoluminescence turn-on detection of CA125 antigen.

    Science.gov (United States)

    Jin, Hui; Gui, Rijun; Gong, Jun; Huang, Wenxue

    2017-06-15

    In this article, Ag 2 S quantum dots (QDs) were prepared by a facile aqueous synthesis method, using thiourea as a new sulfur precursor. Based on electrostatic interactions, 5-fluorouracil (5-Fu) was combined with the aptamer of CA125 antigen to fabricate aptamer/5-Fu complex. The surface of as-prepared Ag 2 S QDs was modified with polyethylenimine, followed by combination with the aptamer/5-Fu complex to form Ag 2 S QDs/aptamer/5-Fu hybrids. During the combination of Ag 2 S QDs with aptamer/5-Fu complex, near-infrared (NIR) photoluminescence (PL) of QDs (peaked at 850nm) was markedly reduced under excitation at 625nm, attributed to photo-induced electron transfer from QDs to 5-Fu. However, the addition of CA125 induced obvious NIR PL recovery, which was ascribed to the strong binding affinity of CA125 with its aptamer, and the separation of aptamer/5-Fu complex from the surface of QDs. Hence, the Ag 2 S QDs/aptamer/5-Fu hybrids were developed as a novel NIR PL turn-on probe of CA125. In the concentration range of [CA125] from 0.1 to 10 6 ngmL -1 , there were a good linear relationship between NIR PL intensities of Ag 2 S QDs and Log[CA125], and a low limit of detection of 0.07ngmL -1 . Experimental results revealed the highly selective and sensitive NIR PL responses of this probe to CA125, over other potential interferences. In real human body fluids, this probe also exhibited superior analytical performance, together with high detection recoveries. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al{sub 2}O{sub 3} using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Chih-Yi [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Mao, Ming-Hua, E-mail: mhmao@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-08-28

    We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al{sub 2}O{sub 3} thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al{sub 2}O{sub 3} passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al{sub 2}O{sub 3} protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

  9. Photoluminescence in Carborane-Stilbene Triads: A Structural, Spectroscopic, and Computational Study.

    Science.gov (United States)

    Cabrera-González, Justo; Viñas, Clara; Haukka, Matti; Bhattacharyya, Santanu; Gierschner, Johannes; Núñez, Rosario

    2016-09-12

    A set of triads in which o- and m-carborane clusters are bonded to two stilbene units through Ccluster -CH2 bonds was synthesized, and their structures were confirmed by X-ray diffraction. A study on the influence of the o- and m- isomers on the absorption and photoluminescence properties of the stilbene units in solution revealed no charge-transfer contributions in the lowest excited state, as confirmed by (TD)DFT calculations. The presence of one or two B-I groups in m-carborane derivatives does not affect the emission properties of the stilbenes in solution, probably due to the rather large distance between the iodo substituents and the fluorophore. Nevertheless, a significant redshift of the photoluminescence (PL) emission maximum in the solid state (thin films and powder samples) compared to solution was observed; this can be traced back to PL sensitization, most probably due to more densely packed stilbene moieties. Remarkably, the PL absolute quantum yields of powder samples are significantly higher than those in solution, and this was attributed to the restricted environment and the aforementioned sensitization. Thus, the bonding of the carborane clusters to two stilbene units preserves their PL behavior in solution, but produces significant changes in the solid state. Furthermore, iodinated species can be considered to be promising precursors for theranostic agents in which both imaging and therapeutic functions could possibly be combined. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Visible photoluminescence from hydrogenated silicon particles suspended in a silane plasma

    International Nuclear Information System (INIS)

    Courteille, C.; Dorier, J.L.; Dutta, J.; Hollenstein, C.; Howling, A.A.; Stoto, T.

    1994-09-01

    Visible photoluminescence at room temperature has been observed in amorphous hydrogenated silicon particulates during their formation in a silane radio-frequency plasma. Oxygen injection along with mass spectrometry measurements demonstrate that oxygen has no influence on the photoluminescence. The appearance of visible photoluminescence coincides with a particle agglomeration phase as shown by laser light scattering experiments, and electron microscopy shows silicon nanocrystals within these particulates. These observations of visible photoluminescence are consistent with the model of quantum confinement in the silicon nanocrystals. (author) 5 figs., 45 refs

  11. Absolute spectroscopy near 7.8 μm with a comb-locked extended-cavity quantum-cascade-laser

    KAUST Repository

    Lamperti, Marco; Alsaif, Bidoor; Gatti, Davide; Fermann, Martin; Laporta, Paolo; Farooq, Aamir; Marangoni, Marco

    2018-01-01

    We report for the first time the frequency locking of an extended-cavity quantum-cascade-laser (EC-QCL) to a near-infrared frequency comb. The locked laser source is exploited to carry out molecular spectroscopy around 7.8 μm with a line-centre frequency combined uncertainty of ~63 kHz. The strength of the approach, in view of an accurate retrieval of line centre frequencies over a spectral range as large as 100 cm-1, is demonstrated on the P(40), P(18) and R(31) lines of the fundamental rovibrational band of N2O covering the centre and edges of the P and R branches. The spectrometer has the potential to be straightforwardly extended to other spectral ranges, till 12 μm, which is the current wavelength limit for commercial cw EC-QCLs.

  12. Absolute spectroscopy near 7.8 μm with a comb-locked extended-cavity quantum-cascade-laser.

    Science.gov (United States)

    Lamperti, Marco; AlSaif, Bidoor; Gatti, Davide; Fermann, Martin; Laporta, Paolo; Farooq, Aamir; Marangoni, Marco

    2018-01-22

    We report for the first time the frequency locking of an extended-cavity quantum-cascade-laser (EC-QCL) to a near-infrared frequency comb. The locked laser source is exploited to carry out molecular spectroscopy around 7.8 μm with a line-centre frequency combined uncertainty of ~63 kHz. The strength of the approach, in view of an accurate retrieval of line centre frequencies over a spectral range as large as 100 cm -1 , is demonstrated on the P(40), P(18) and R(31) lines of the fundamental rovibrational band of N 2 O covering the centre and edges of the P and R branches. The spectrometer has the potential to be straightforwardly extended to other spectral ranges, till 12 μm, which is the current wavelength limit for commercial cw EC-QCLs.

  13. Absolute spectroscopy near 7.8 μm with a comb-locked extended-cavity quantum-cascade-laser

    KAUST Repository

    Lamperti, Marco

    2018-01-16

    We report for the first time the frequency locking of an extended-cavity quantum-cascade-laser (EC-QCL) to a near-infrared frequency comb. The locked laser source is exploited to carry out molecular spectroscopy around 7.8 μm with a line-centre frequency combined uncertainty of ~63 kHz. The strength of the approach, in view of an accurate retrieval of line centre frequencies over a spectral range as large as 100 cm-1, is demonstrated on the P(40), P(18) and R(31) lines of the fundamental rovibrational band of N2O covering the centre and edges of the P and R branches. The spectrometer has the potential to be straightforwardly extended to other spectral ranges, till 12 μm, which is the current wavelength limit for commercial cw EC-QCLs.

  14. Quantum

    CERN Document Server

    Al-Khalili, Jim

    2003-01-01

    In this lively look at quantum science, a physicist takes you on an entertaining and enlightening journey through the basics of subatomic physics. Along the way, he examines the paradox of quantum mechanics--beautifully mathematical in theory but confoundingly unpredictable in the real world. Marvel at the Dual Slit experiment as a tiny atom passes through two separate openings at the same time. Ponder the peculiar communication of quantum particles, which can remain in touch no matter how far apart. Join the genius jewel thief as he carries out a quantum measurement on a diamond without ever touching the object in question. Baffle yourself with the bizzareness of quantum tunneling, the equivalent of traveling partway up a hill, only to disappear then reappear traveling down the opposite side. With its clean, colorful layout and conversational tone, this text will hook you into the conundrum that is quantum mechanics.

  15. The nature of the photoluminescence in amorphized PZT

    International Nuclear Information System (INIS)

    Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

    2005-01-01

    The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

  16. Quantum exam

    International Nuclear Information System (INIS)

    Nguyen, Ba An

    2006-01-01

    Absolutely and asymptotically secure protocols for organizing an exam in a quantum way are proposed basing judiciously on multipartite entanglement. The protocols are shown to stand against common types of eavesdropping attack

  17. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  18. Absolute nuclear material assay

    Science.gov (United States)

    Prasad, Manoj K [Pleasanton, CA; Snyderman, Neal J [Berkeley, CA; Rowland, Mark S [Alamo, CA

    2010-07-13

    A method of absolute nuclear material assay of an unknown source comprising counting neutrons from the unknown source and providing an absolute nuclear material assay utilizing a model to optimally compare to the measured count distributions. In one embodiment, the step of providing an absolute nuclear material assay comprises utilizing a random sampling of analytically computed fission chain distributions to generate a continuous time-evolving sequence of event-counts by spreading the fission chain distribution in time.

  19. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  20. Danish Towns during Absolutism

    DEFF Research Database (Denmark)

    This anthology, No. 4 in the Danish Urban Studies Series, presents in English recent significant research on Denmark's urban development during the Age of Absolutism, 1660-1848, and features 13 articles written by leading Danish urban historians. The years of Absolutism were marked by a general...

  1. ABSOLUTE NEUTRINO MASSES

    DEFF Research Database (Denmark)

    Schechter, J.; Shahid, M. N.

    2012-01-01

    We discuss the possibility of using experiments timing the propagation of neutrino beams over large distances to help determine the absolute masses of the three neutrinos.......We discuss the possibility of using experiments timing the propagation of neutrino beams over large distances to help determine the absolute masses of the three neutrinos....

  2. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  3. Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

    CERN Document Server

    Sachenko, A V; Manojlov, E G; Svechnikov, S V

    2001-01-01

    The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

  4. Quantum efficiency of silica-coated rare-earth doped yttrium silicate

    International Nuclear Information System (INIS)

    Cervantes-Vásquez, D.; Contreras, O.E.; Hirata, G.A.

    2013-01-01

    The photoluminescent properties of rare earth-activated white-emitting Y 2 SiO 5 :Ce,Tb nanocrystalline phosphor prepared by two different methods, pressure-assisted combustion synthesis and sol–gel, were studied. The synthesized phosphor samples were post-annealed at 1373 K and 1623 K in order to obtain the X1-Y 2 SiO 5 and X2-Y 2 SiO 5 phases, respectively, which were confirmed by X-ray diffraction measurements. Photoluminescence analysis showed the contribution of two blue-emission bands within the 380–450 nm region originating from 5d–4f transitions in Ce 3+ ions and a well-defined green emission of Tb 3+ ions located at 545 nm corresponding to 5 D 4 → 7 F 5 electronic transitions. Thereafter, Y 2 SiO 5 :Ce,Tb powders were coated with colloidal silica in order to investigate the effect of silica coatings on their luminescent properties. Absolute fluorescence quantum efficiency measurements were carefully performed, which revealed an increase of 12% of efficiency in coated compared with bare-Y 2 SiO 5 :Ce,Tb phosphor. -- Highlights: • Y 2 SiO 5 :Ce,Tb phosphor powders were successfully coated with colloidal silica. • Post-annealing treatments improved the quantum efficiency of silica-coated Y 2 SiO 5 :Ce,Tb phosphors. • Absolute fluorescence quantum efficiency measurements showed an increase of 12%

  5. NGS Absolute Gravity Data

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The NGS Absolute Gravity data (78 stations) was received in July 1993. Principal gravity parameters include Gravity Value, Uncertainty, and Vertical Gradient. The...

  6. Approach To Absolute Zero

    Indian Academy of Sciences (India)

    more and more difficult to remove heat as one approaches absolute zero. This is the ... A new and active branch of engineering ... This temperature is called the critical temperature, Te' For sulfur dioxide the critical ..... adsorbent charcoal.

  7. Encasing the Absolutes

    Directory of Open Access Journals (Sweden)

    Uroš Martinčič

    2014-05-01

    Full Text Available The paper explores the issue of structure and case in English absolute constructions, whose subjects are deduced by several descriptive grammars as being in the nominative case due to its supposed neutrality in terms of register. This deduction is countered by systematic accounts presented within the framework of the Minimalist Program which relate the case of absolute constructions to specific grammatical factors. Each proposal is shown as an attempt of analysing absolute constructions as basic predication structures, either full clauses or small clauses. I argue in favour of the small clause approach due to its minimal reliance on transformations and unique stipulations. Furthermore, I propose that small clauses project a singular category, and show that the use of two cases in English absolute constructions can be accounted for if they are analysed as depictive phrases, possibly selected by prepositions. The case of the subject in absolutes is shown to be a result of syntactic and non-syntactic factors. I thus argue in accordance with Minimalist goals that syntactic case does not exist, attributing its role in absolutes to other mechanisms.

  8. Photoluminescence and applications of Ni:ZnS in photovoltaic cells

    Science.gov (United States)

    Kalya Tulasidas, Vadiraj; Belagali, Shiddappa L.; Palakkandy, Arun; Kumar, Kuldeep

    2018-05-01

    An enormous amount of development has been made in the field of photovoltaics in the last 50 odd years. In recent years, the uses of semiconductor nanoparticles have given a new impetus and direction to research in the field of solar cells. This is due to the excellent photoemission properties shown by semiconductors in the quantum dot (QD) state. ZnS QDs show a further interesting feature where their photoemission properties show perceivable changes on adding dopants such as nickel. In the present work, we describe the characterization studies made on Ni:ZnS thin films using photoluminescence (PL), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS), and further reports their performance as an absorbing layer in a hybrid solar cell along with poly(3-hexylthiophene) (P3HT). Fabricated Ni:ZnS cell showed a conversion efficiency of 0.25 ± 0.05% with V OC and J SC of 560 mV and 0.11 mA/cm2, respectively. Although the absolute conversion efficiency appears low (only 0.25%), the addition of nickel was found to have improved the efficiency by a hundredfold compared with undoped ZnS.

  9. Polarized electrons, trions, and nuclei in charged quantum dots

    Science.gov (United States)

    Bracker, A. S.; Tischler, J. G.; Korenev, V. L.; Gammon, D.

    2003-07-01

    We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization of photoluminescence. Electrons and nuclei are polarized indirectly through subsequent relaxation processes. Polarized electrons are identified by the Hanle effect for exciton and trion photoluminescence, while polarized nuclei are identified through the Overhauser effect in individual charged quantum dots.

  10. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

    DEFF Research Database (Denmark)

    Iida, Daisuke; Fadil, Ahmed; Chen, Yuntian

    2015-01-01

    We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhance......We report internal quantum efficiency enhancement of thin p-GaN green quantumwell structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density...

  11. Calibration with Absolute Shrinkage

    DEFF Research Database (Denmark)

    Øjelund, Henrik; Madsen, Henrik; Thyregod, Poul

    2001-01-01

    In this paper, penalized regression using the L-1 norm on the estimated parameters is proposed for chemometric je calibration. The algorithm is of the lasso type, introduced by Tibshirani in 1996 as a linear regression method with bound on the absolute length of the parameters, but a modification...

  12. Approach to Absolute Zero

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 2; Issue 10. Approach to Absolute Zero Below 10 milli-Kelvin. R Srinivasan. Series Article Volume 2 Issue 10 October 1997 pp 8-16. Fulltext. Click here to view fulltext PDF. Permanent link: https://www.ias.ac.in/article/fulltext/reso/002/10/0008-0016 ...

  13. Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon

    International Nuclear Information System (INIS)

    Herlufsen, Sandra; Schmidt, Jan; Hinken, David; Bothe, Karsten; Brendel, Rolf

    2008-01-01

    We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  14. Rhodamine 6G impregnated porous silica: A photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Anedda, A. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy); Carbonaro, C.M. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy)]. E-mail: cm.carbonaro@dsf.unica.it; Clemente, F. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Corpino, R. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Ricci, P.C. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Rossini, S. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy)

    2005-12-15

    The optical properties of rhodamine 6G dye confined in porous silica are reported. Photoluminescence properties of embedded chromophores in mesoporous hosts can be affected by the surrounding matrices: shifts in emission spectra and variations of photoluminescence quantum yield are found as compared to dye solutions. Host-guest interactions are studied here by varying both SiO{sub 2} xerogels porosity and the dye concentration. Comparing samples obtained by impregnating matrices with 5.4 and 18.2 nm pores with solutions having concentrations in the rhodamine 6G high laser gain, matrices with 5.4 nm pores impregnated with a dye concentration of 5 x 10{sup -4} M are found to be the most stable and efficient in the examined range.

  15. Optical properties of the semiconductor quantum structure

    International Nuclear Information System (INIS)

    Haratizadeh, H.; Holtz, P.O.; Monemar, B.; Karlsoon, K.F.; Moskalenko, E.S.; Amano, H.; Akasaki, I.; Schoenfeld, W.V.; Garcia, J.M.; Petroff, P.M.

    2004-01-01

    Optical properties of the quantum structures have been discussed with emphasize of the AlGaN/GaN multiple quantum wells and InAs/GaAs quantum dot structures. We report on a detailed study of low temperature photoluminescence in Al 0 .07Ga 0 .93 N/GaN multiple quantum wells. The structures were nominally undoped multiple quantum well grown on sapphire substrate. The structure from discrete well width variations is here resolved in photoluminescence spectra. The results demonstrate that the theoretically estimated fields in this work are consistent with the experimental spectra

  16. Effekten af absolut kumulation

    DEFF Research Database (Denmark)

    Kyvsgaard, Britta; Klement, Christian

    2012-01-01

    Som led i finansloven for 2011 blev regeringen og forligspartierne enige om at undersøge reglerne om strafudmåling ved samtidig pådømmelse af flere kriminelle forhold og i forbindelse hermed vurdere konsekvenserne af at ændre de gældende regler i forhold til kapacitetsbehovet i Kriminalforsorgens...... samlet bødesum ved en absolut kumulation i forhold til en modereret kumulation, som nu er gældende....

  17. Photoluminescence enhancement in nanocomposite thin films of CdS-ZnO

    International Nuclear Information System (INIS)

    Ayyub, Pushan; Vasa, Parinda; Taneja, Praveen; Banerjee, Rajarshi; Singh, B.P.

    2005-01-01

    We show that the photoluminescence emitted from a dense, two-component quantum dot ensemble on a thin film is significantly higher and decays much faster than that from quantum dots of either of the two pure systems (CdS and ZnO). The semiconductor nanocomposite, in which the characteristic grain size of each species was 2-3 nm, was deposited directly on Si wafers by high-pressure magnetron sputtering, and exhibits a single, relatively sharp optical absorption edge

  18. Towards absolute neutrino masses

    Energy Technology Data Exchange (ETDEWEB)

    Vogel, Petr [Kellogg Radiation Laboratory 106-38, Caltech, Pasadena, CA 91125 (United States)

    2007-06-15

    Various ways of determining the absolute neutrino masses are briefly reviewed and their sensitivities compared. The apparent tension between the announced but unconfirmed observation of the 0{nu}{beta}{beta} decay and the neutrino mass upper limit based on observational cosmology is used as an example of what could happen eventually. The possibility of a 'nonstandard' mechanism of the 0{nu}{beta}{beta} decay is stressed and the ways of deciding which of the possible mechanisms is actually operational are described. The importance of the 0{nu}{beta}{beta} nuclear matrix elements is discussed and their uncertainty estimated.

  19. Two types of the relation between the intensity and the life time of photoluminescence of core/shell semiconductor quantum dots: Important role of Coulomb field and tunneling transitions

    Energy Technology Data Exchange (ETDEWEB)

    Osad' ko, I. S., E-mail: osadko@isan.troitsk.ru [Institute for spectroscopy RAS, Troitsk, 142190 Moscow (Russian Federation)

    2014-10-28

    It has been recently found [Gh. Galland, Y. Ghosh, A. Steinbrück, M. Sykora, J. A. Hollingsworth, and V. I. Klimov, Nature (London) 479, 203 (2011)] that semiconductor core/shell nanocrystals (NCs) with blinking photoluminescence (PL) can be of “A” or “B” type. NCs of A-type exhibit correlation between the intensity of PL and the life time. In NCs of B-type such correlation is absent. Simple model based on combination of the charging model and the two-level system model is proposed for describing emissive properties of NCs of both types. The model invokes fluctuations of emission ability γ{sub em} of NC to explain the emissive properties of NCs of B-type. Our combined model is also in agreement with anticorrelation between the duration τ{sub off} of off intervals and PL life time t{sub off} in off intervals found recently for NCs of A-type in the experiment [A. A. Cordones, T. J. Bixby, and S. R. Leone, Nano Lett. 11, 3366 (2011)].

  20. Lensless Photoluminescence Hyperspectral Camera Employing Random Speckle Patterns.

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Denk, Ondřej; Hlubuček, Jiří

    2017-01-01

    Roč. 7, č. 1 (2017), č. článku 15309. ISSN 2045-2322 R&D Projects: GA MŠk(CZ) LO1206; GA ČR(CZ) GJ17-26284Y Institutional support: RVO:61389021 Keywords : compressed sensing * photoluminescence imaging * laser speckles * single-pixel camera Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 4.259, year: 2016 https://www.nature.com/articles/s41598-017-14443-4

  1. Photoluminescence excitation measurements using pressure-tuned laser diodes

    Science.gov (United States)

    Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-06-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

  2. Photoluminescence excitation measurements using pressure-tuned laser diodes

    International Nuclear Information System (INIS)

    Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-01-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

  3. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  4. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  5. Thermodynamics of negative absolute pressures

    International Nuclear Information System (INIS)

    Lukacs, B.; Martinas, K.

    1984-03-01

    The authors show that the possibility of negative absolute pressure can be incorporated into the axiomatic thermodynamics, analogously to the negative absolute temperature. There are examples for such systems (GUT, QCD) processing negative absolute pressure in such domains where it can be expected from thermodynamical considerations. (author)

  6. Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Stobbe, Søren; Schneider, C.

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  7. Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

    DEFF Research Database (Denmark)

    Albert, F.; Schneider, C.; Stobbe, Søren

    2010-01-01

    We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD...

  8. Absolute Gravimetry in Fennoscandia

    DEFF Research Database (Denmark)

    Pettersen, B. R; TImmen, L.; Gitlein, O.

    The Fennoscandian postglacial uplift has been mapped geometrically using precise levelling, tide gauges, and networks of permanent GPS stations. The results identify major uplift rates at sites located around the northern part of the Gulf of Bothnia. The vertical motions decay in all directions...... motions) has its major axis in the direction of southwest to northeast and covers a distance of about 2000 km. Absolute gravimetry was made in Finland and Norway in 1976 with a rise-and fall instrument. A decade later the number of gravity stations was expanded by JILAg-5, in Finland from 1988, in Norway...... time series of several years are now available. Along the coast there are nearby tide gauge stations, many of which have time series of several decades. We describe the observing network, procedures, auxiliary observations, and discuss results obtained for selected sites. We compare the gravity results...

  9. Photoluminescence of nanocrystals embedded in oxide matrices

    International Nuclear Information System (INIS)

    Estrada, C.; Gonzalez, J.A.; Kunold, A.; Reyes-Esqueda, J.A.; Pereyra, P.

    2006-12-01

    We used the theory of finite periodic systems to explain the photoluminescence spectra dependence on the average diameter of nanocrystals embedded in oxide matrices. Because of the broad matrix band gap, the photoluminescence response is basically determined by isolated nanocrystals and sequences of a few of them. With this model we were able to reproduce the shape and displacement of the experimentally observed photoluminescence spectra. (author)

  10. Quantum Secure Direct Communication with Quantum Memory.

    Science.gov (United States)

    Zhang, Wei; Ding, Dong-Sheng; Sheng, Yu-Bo; Zhou, Lan; Shi, Bao-Sen; Guo, Guang-Can

    2017-06-02

    Quantum communication provides an absolute security advantage, and it has been widely developed over the past 30 years. As an important branch of quantum communication, quantum secure direct communication (QSDC) promotes high security and instantaneousness in communication through directly transmitting messages over a quantum channel. The full implementation of a quantum protocol always requires the ability to control the transfer of a message effectively in the time domain; thus, it is essential to combine QSDC with quantum memory to accomplish the communication task. In this Letter, we report the experimental demonstration of QSDC with state-of-the-art atomic quantum memory for the first time in principle. We use the polarization degrees of freedom of photons as the information carrier, and the fidelity of entanglement decoding is verified as approximately 90%. Our work completes a fundamental step toward practical QSDC and demonstrates a potential application for long-distance quantum communication in a quantum network.

  11. Quantum gravity and quantum nondemolition measurements

    International Nuclear Information System (INIS)

    Borzeszkowski, H.H. von; Treder, H.J.

    1984-01-01

    It is shown that in Quantum Gravity, and more general: in Grand Unified Theory incorporating General Relativity on a basic level, there arise necessarily absolute limitations on measurement which one cannot evade by any 'quantum nondemolition measurements'. This fact is demonstrated not to oppose the existence of certain approximations to the full theory where these limitations do not arise. (author)

  12. Fabrication of GaAs concentric multiple quantum rings by droplet epitaxy

    International Nuclear Information System (INIS)

    Somaschini, C; Bietti, S; Sanguinetti, S; Koguchi, N; Fedorov, A; Abbarchi, M; Gurioli, M

    2009-01-01

    We present the fabrication of a novel quantum nanostructure, constituted by three concentric quantum rings by droplet epitaxy. Atomic Force Microscopy and photoluminescence characterization of these nanostructures is reported.

  13. Photoluminescence of 1,3-dimethyl pyrazoloquinoline derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Koscien, E. [1st Liceum, Sobieskiego 22, 42-700 Lubliniec (Poland); Gondek, E.; Pokladko, M. [Institute of Physics, Technical University of Krakow, Podhorazych 1, 30-084 Krakow (Poland); Jarosz, B. [Department of Chemistry, Hugon Kollotaj Agricultural University, Al. Mickiewicza 24/28, 30-059 Krakow (Poland); Vlokh, R.O. [Institute of Physical Optics, Dragomanova 23, 79005 Lviv (Ukraine); Kityk, A.V. [Department of Electrical Engineering, Czestochowa University of Technology, Al. Armii Krajowej 17, 42-200 Czestochowa (Poland)], E-mail: kityk@ap.univie.ac.at

    2009-04-15

    This paper presents absorption and photoluminescence of 6-F, 6-Br, 6-Cl, 7-TFM and 6-COOEt derivatives of 1,3-dimethyl-1H-Pyrazolo[3,4-b]quinoline (DMPQ). The measured absorption and emission spectra are compared with the quantum chemical calculations performed by means of the semi-empirical methods (AM1 or PM3) that are applied either to the equilibrium conformations in vacuo (T = 0 K) or combined with the molecular dynamics simulations (T = 300 K). The spectra calculated by the AM1 method appear to be for all dyes in practically excellent agreement with the measured ones. In particular, the position of the first absorption band is obtained with the accuracy up to a few nanometers, whereas the calculated photoluminescence spectra predict the positions of the emission maxima for a gas phase with the accuracy up to 10-18 nm. The photoemission spectra of DMPQ dyes are considerably less solvatochromic comparing to phenyl-containing pyrazoloquinoline derivatives. According to the quantum chemical analysis the reason for such behaviour lies in a local character of the electronic transitions of DMPQ dyes which are characterized by a relatively small difference between the excited state and ground state dipole moments. Importantly that the rotational dynamics of both methyl subunits does not change this situation.

  14. Phosphorene quantum dots

    Science.gov (United States)

    Vishnoi, Pratap; Mazumder, Madhulika; Barua, Manaswee; Pati, Swapan K.; Rao, C. N. R.

    2018-05-01

    Phosphorene, a two-dimensional material, has been a subject of recent investigations. In the present study, we have prepared blue fluorescent phosphorene quantum dots (PQDs) by liquid phase exfoliation of black phosphorus in two non-polar solvents, toluene and mesitylene. The average particle sizes of PQDs decrease from 5.0 to 1.0 nm on increasing the sonicator power from 150 to 225 W. The photoluminescence spectrum of the PQDs is red-shifted in the 395-470 nm range on increasing the excitation-wavelength from 300 to 480 nm. Electron donor and acceptor molecules quench the photoluminescence, with the acceptors showing more marked effects.

  15. Synthesis and photoluminescence property of silicon carbide ...

    Indian Academy of Sciences (India)

    Administrator

    The β-SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of. 400 nm, which is significantly ... in the nanowires. Keywords. SiC nanowires; nanocrystalline diamond; crystal growth; photoluminescence. 1. ... unique mechanical, electrical and thermal properties. Due to the wide band gap ...

  16. Lyman alpha SMM/UVSP absolute calibration and geocoronal correction

    Science.gov (United States)

    Fontenla, Juan M.; Reichmann, Edwin J.

    1987-01-01

    Lyman alpha observations from the Ultraviolet Spectrometer Polarimeter (UVSP) instrument of the Solar Maximum Mission (SMM) spacecraft were analyzed and provide instrumental calibration details. Specific values of the instrument quantum efficiency, Lyman alpha absolute intensity, and correction for geocoronal absorption are presented.

  17. Absolute risk, absolute risk reduction and relative risk

    Directory of Open Access Journals (Sweden)

    Jose Andres Calvache

    2012-12-01

    Full Text Available This article illustrates the epidemiological concepts of absolute risk, absolute risk reduction and relative risk through a clinical example. In addition, it emphasizes the usefulness of these concepts in clinical practice, clinical research and health decision-making process.

  18. UV and air stability of high-efficiency photoluminescent silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

    2014-12-30

    The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

  19. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  20. X-ray diffraction, vibrational and photoluminescence studies of the self-organized quantum well crystal H3N(CH2)6NH3PbBr4

    International Nuclear Information System (INIS)

    Dammak, T.; Fourati, N.; Boughzala, H.; Mlayah, A.; Abid, Y.

    2007-01-01

    We have prepared new semiconductor H 3 N(CH 2 ) 6 NH 3 PbBr 4 crystals which are self-assembled organic-inorganic hybrid materials. The grown crystals have been studied by X-ray diffraction, infrared absorption and Raman spectroscopy scattering. We found that the title compound, abbreviated 2C 6 PbBr 4 , crystallizes in a two-dimensional (2D) structure with a P2 1 /a space group. In the inorganic semiconductor sub-lattice, the corner sharing PbBr 6 octahedra form infinite 2D chains. The organic C 6 H 18 N 2 + ions form the insulator barriers between the inorganic semiconductor layers. Such a packing leads to a self-assembled multiple quantum well structure. Raman and infrared spectra of the title compound were recorded in the 50-500 and 400-4000 cm -1 frequency regions, respectively. The assignment of the observed Raman lines was performed by comparison with the homologous compounds. Transmission measurements on thin films of 2C 6 PbBr 4 , obtained by the spin coating method, revealed a strong absorption peak at 380 nm. Luminescence measurements showed an emission line at 402 nm associated with radiative recombinations of excitons confined within the PbBr 6 layers. The electron-hole binding energy is estimated at 180 meV

  1. Projective absoluteness for Sacks forcing

    NARCIS (Netherlands)

    Ikegami, D.

    2009-01-01

    We show that Sigma(1)(3)-absoluteness for Sacks forcing is equivalent to the nonexistence of a Delta(1)(2) Bernstein set. We also show that Sacks forcing is the weakest forcing notion among all of the preorders that add a new real with respect to Sigma(1)(3) forcing absoluteness.

  2. Nanomedicine photoluminescence crystal-inspired brain sensing approach

    Science.gov (United States)

    Fang, Yan; Wang, Fangzhen; Wu, Rong

    2018-02-01

    Precision sensing needs to overcome a gap of a single atomic step height standard. In response to the cutting-edge challenge, a heterosingle molecular nanomedicine crystal was developed wherein a nanomedicine crystal height less than 1 nm was designed and selfassembled on a substrate of either a highly ordered and freshly separated graphite or a N-doped silicon with hydrogen bonding by a home-made hybrid system of interacting single bioelectron donor-acceptor and a single biophoton donor-acceptor according to orthogonal mathematical optimization scheme, and an atomic spatial resolution conducting atomic force microscopy (C-AFM) with MHz signal processing by a special transformation of an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) were employed, wherein a z axis direction UV-VIS laser interferometer and a feedback circuit were used to achieve the minimized uncertainty of a micro-regional structure height and its corresponding local differential conductance quantization (spin state) process was repeatedly measured with a highly time resolution, as well as a pulsed UV-VIS laser micro-photoluminescence (PL) spectrum with a single photon resolution was set up by traceable quantum sensing and metrology relied up a quantum electrical triangle principle. The coupling of a single bioelectron conducting, a single biophoton photoluminescence, a frequency domain temporal spin phase in nanomedicine crystal-inspired sensing methods and sensor technologies were revealed by a combination of C-AFM and PL measurement data-based mathematic analyses1-3, as depicted in Figure 1 and repeated in nanomedicine crystals with a single atomic height. It is concluded that height-current-phase uncertainty correlation pave a way to develop a brain imaging and a single atomic height standard, quantum sensing, national security, worldwide impact1-3 technology and beyond.

  3. Quantum efficiency of silica-coated rare-earth doped yttrium silicate

    Energy Technology Data Exchange (ETDEWEB)

    Cervantes-Vásquez, D., E-mail: dcervant@cnyn.unam.mx [Centro de Investigación Científica y de Educación Superior de Ensenada, Carretera Ensenada-Tijuana No. 3918, Zona Playitas, C.P. 22860 Ensenada, B.C., México (Mexico); Contreras, O.E.; Hirata, G.A. [Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada, C.P. 22800 Ensenada, B.C., México (Mexico)

    2013-11-15

    The photoluminescent properties of rare earth-activated white-emitting Y{sub 2}SiO{sub 5}:Ce,Tb nanocrystalline phosphor prepared by two different methods, pressure-assisted combustion synthesis and sol–gel, were studied. The synthesized phosphor samples were post-annealed at 1373 K and 1623 K in order to obtain the X1-Y{sub 2}SiO{sub 5} and X2-Y{sub 2}SiO{sub 5} phases, respectively, which were confirmed by X-ray diffraction measurements. Photoluminescence analysis showed the contribution of two blue-emission bands within the 380–450 nm region originating from 5d–4f transitions in Ce{sup 3+} ions and a well-defined green emission of Tb{sup 3+} ions located at 545 nm corresponding to {sup 5}D{sub 4}→{sup 7}F{sub 5} electronic transitions. Thereafter, Y{sub 2}SiO{sub 5}:Ce,Tb powders were coated with colloidal silica in order to investigate the effect of silica coatings on their luminescent properties. Absolute fluorescence quantum efficiency measurements were carefully performed, which revealed an increase of 12% of efficiency in coated compared with bare-Y{sub 2}SiO{sub 5}:Ce,Tb phosphor. -- Highlights: • Y{sub 2}SiO{sub 5}:Ce,Tb phosphor powders were successfully coated with colloidal silica. • Post-annealing treatments improved the quantum efficiency of silica-coated Y{sub 2}SiO{sub 5}:Ce,Tb phosphors. • Absolute fluorescence quantum efficiency measurements showed an increase of 12%.

  4. A Review of the Synthesis and Photoluminescence Properties of Hybrid ZnO and Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Protima Rauwel

    2016-01-01

    Full Text Available Photoluminescent ZnO carbon nanomaterials are an emerging class of nanomaterials with unique optical properties. They each, ZnO and carbon nanomaterials, have an advantage of being nontoxic and environmentally friendly. Their cost-effective production methods along with simple synthesis routes are also of interest. Moreover, ZnO presents photoluminescence emission in the UV and visible region depending on the synthesis routes, shape, size, deep level, and surface defects. When combined with carbon nanomaterials, modification of surface defects in ZnO allows tuning of these photoluminescence properties to produce, for example, white light. Moreover, efficient energy transfer from the ZnO to carbon nanostructures makes them suitable candidates not only in energy harvesting applications but also in biosensors, photodetectors, and low temperature thermal imaging. This work reviews the synthesis and photoluminescence properties of 3 carbon allotropes: carbon quantum or nanodots, graphene, and carbon nanotubes when hybridized with ZnO nanostructures. Various synthesis routes for the hybrid materials with different morphologies of ZnO are presented. Moreover, differences in photoluminescence emission when combining ZnO with each of the three different allotropes are analysed.

  5. Optical Spectroscopy Of Charged Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2007-04-01

    Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

  6. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    Energy Technology Data Exchange (ETDEWEB)

    Pietraszkiewicz, Marek, E-mail: mpietraszkiewicz@ichf.edu.pl [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina [Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw (Poland); Dutkiewicz, Grzegorz; Borowiak, Teresa [Adam Mickiewicz University, Faculty of Chemistry, Department of Crystallography, Grunwaldzka 6, 60-780 Poznań (Poland); Kaczmarek, Anna M. [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium); Van Deun, Rik, E-mail: rik.vandeun@ugent.be [L3–Luminescent Lanthanide Lab, f-element coordination chemistry, Ghent University, Department of Inorganic and Physical Chemistry, Krijgslaan 281, Building S3, 9000 Gent (Belgium)

    2016-02-15

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu{sup 3+} to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip){sub 3}. The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  7. Highly photoluminescent europium tetraphenylimidodiphosphinate ternary complexes with heteroaromatic co-ligands. Solution and solid state studies

    International Nuclear Information System (INIS)

    Pietraszkiewicz, Marek; Pietraszkiewicz, Oksana; Karpiuk, Jerzy; Majka, Alina; Dutkiewicz, Grzegorz; Borowiak, Teresa; Kaczmarek, Anna M.; Van Deun, Rik

    2016-01-01

    Tetraphenylimidodiphosphinate (tpip) forms neutral 3:1 complexes with lanthanide ions. These complexes can accommodate one ancillary planar heterocyclic ligand to complement their coordination sphere of Eu 3+ to coordination number 8. Several co-ligands were tested to form new complexes: 1,10-phenanthroline, bathophenanthroline, 2,4,6-tris(2-pyridyl)-1,3,5-triazine, dipyrido[3,2-f:2′,3′-h]quinoxaline and 2,2′:6′,2′′-terpyridine. The addition of heterocyclic N,N-bidentate co-ligands to the coordination sphere results in a dramatic (by a factor of 45–50) luminescence enhancement of the parent Eu(tpip) 3 . The solid-state measurements confirmed that the ancillary ligands strongly increased the photoluminescence quantum yield (PLQY) of the investigated complexes. - Highlights: • We have disovered highly photoluminescent ternary Eu(III) complexes. • They consist of Eu(III) tetraphenylimidodiphosphinate, and planar heterocyclic ligands. • The increase in photoluminescence quantum yields in solution is enhanced up to 50 times in solution. • The solid-state photoluminescence exceeds 80% at room temperature.

  8. Enzyme biosensor systems based on porous silicon photoluminescence for detection of glucose, urea and heavy metals.

    Science.gov (United States)

    Syshchyk, Olga; Skryshevsky, Valeriy A; Soldatkin, Oleksandr O; Soldatkin, Alexey P

    2015-04-15

    A phenomenon of changes in photoluminescence of porous silicon at variations in medium pH is proposed to be used as a basis for the biosensor system development. The method of conversion of a biochemical signal into an optical one is applied for direct determination of glucose and urea as well as for inhibitory analysis of heavy metal ions. Changes in the quantum yield of porous silicon photoluminescence occur at varying pH of the tested solution due to the enzyme-substrate reaction. When creating the biosensor systems, the enzymes urease and glucose oxidase (GOD) were used as a bioselective material; their optimal concentrations were experimentally determined. It was shown that the photoluminescence intensity of porous silicon increased by 1.7 times when increasing glucose concentration in the GOD-containing reaction medium from 0 to 3.0mM, and decreased by 1.45 times at the same increase in the urea concentration in the urease-containing reaction medium. The calibration curves of dependence of the biosensor system responses on the substrate concentrations are presented. It is shown that the presence of heavy metal ions (Cu(2+), Pb(2+), and Cd(2+)) in the tested solution causes an inhibition of the enzymatic reactions catalyzed by glucose oxidase and urease, which results in a restoration of the photoluminescence quantum yield of porous silicon. It is proposed to use this effect for the inhibitory analysis of heavy metal ions. Copyright © 2014 Elsevier B.V. All rights reserved.

  9. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

    Science.gov (United States)

    Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

    2000-01-01

    The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

  10. Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tian, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu; Dagenais, Mario, E-mail: tianlee@umd.edu, E-mail: dage@ece.umd.edu [Department of Electrical Engineering, University of Maryland, College Park, Maryland 20742 (United States); Lu, Haofeng; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)

    2015-02-02

    Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron transport in doped QDs are demonstrated to play a key role in solar energy conversion. Reduced QD state absorption with increased n-doping is observed in the self-assembled In{sub 0.5}Ga{sub 0.5}As/GaAs QDs from high resolution below-bandgap external quantum efficiency (EQE) measurement, which is a direct consequence of the Pauli exclusion principle. We also show that besides partial filling of the quantum states, electron-doping produces negatively charged QDs that exert a repulsive Coulomb force on the mobile electrons, thus altering the electron trajectory and reducing the probability of electron capture, leading to an improved collection efficiency of photo-generated carriers, as indicated by an absolute above-bandgap EQE measurement. The resulting redistribution of the mobile electron in the planar direction is further validated by the observed photoluminescence intensity dependence on doping.

  11. Cavity quantum electrodynamics in the Anderson-localized regime

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2010-01-01

    We experimentally measure, by means of time-resolved photoluminescence spectroscopy, a 15-fold enhancement of the spontaneous emission decay rate of single semiconductor quantum dots coupled to disorder-induced Anderson-localized modes with efficiencies reaching 94%.......We experimentally measure, by means of time-resolved photoluminescence spectroscopy, a 15-fold enhancement of the spontaneous emission decay rate of single semiconductor quantum dots coupled to disorder-induced Anderson-localized modes with efficiencies reaching 94%....

  12. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    International Nuclear Information System (INIS)

    Ramírez-Porras, A.; García, O.; Vargas, C.; Corrales, A.; Solís, J.D.

    2015-01-01

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models

  13. Stochastic quantum confinement in nanocrystalline silicon layers: The role of quantum dots, quantum wires and localized states

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Porras, A., E-mail: aramirez@fisica.ucr.ac.cr [Centro de Investigación en Ciencia e Ingeniería de Materiales (CICIMA), Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); García, O. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Vargas, C. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Corrales, A. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Escuela de Química, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica); Solís, J.D. [Escuela de Física, Universidad de Costa Rica, San Pedro de Montes de Oca 11501 (Costa Rica)

    2015-08-30

    Highlights: • PL spectra of porous silicon samples have been studied using a stochastic model. • This model can deconvolute PL spectra into three components. • Quantum dots, quantum wires and localized states have been identified. • Nanostructure diameters are in the range from 2.2 nm to 4.0 nm. • Contributions from quantum wires are small compared to the others. - Abstract: Nanocrystallites of Silicon have been produced by electrochemical etching of crystal wafers. The obtained samples show photoluminescence in the red band of the visible spectrum when illuminated by ultraviolet light. The photoluminescence spectra can be deconvolved into three components according to a stochastic quantum confinement model: one band coming from Nanocrystalline dots, or quantum dots, one from Nanocrystalline wires, or quantum wires, and one from the presence of localized surface states related to silicon oxide. The results fit well within other published models.

  14. Cryogenic, Absolute, High Pressure Sensor

    Science.gov (United States)

    Chapman, John J. (Inventor); Shams. Qamar A. (Inventor); Powers, William T. (Inventor)

    2001-01-01

    A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

  15. Investigation of In0.7Ga0.3As/In0.7Al0.3As metamorphic HEMT- heterostructures by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Romanovskiy, D S; LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" data-affiliation=" (Saint-Petersburg Electrotechnical University LETT', Prof. Popova 5, St. Petersburg 197376 (Russian Federation))" >Tarasov, S A; Galiev, G B; Pushkarev, S S

    2014-01-01

    Low-temperature photoluminescence and photoreflectance have been studied in several metamorphic HEMT- (MHEMT-) heterostructures with the same active regions and different buffer layer designs grown by solid-source molecular beam epitaxy. The indium mole fraction in InAlAs/InGaAs/InAlAs single quantum well (QW) is 0.7. It was found that structures with step-graded metamorphic buffer have better quality. Also it was shown that mismatched superlattices in metamorphic buffer can influence on the half-width of photoluminescence spectra. The possible attribution of photoluminescence and photoreflectance spectral lines and their thermal behaviour are critically discussed

  16. Correlation of electrical conductivity and photoluminescence in nanoporous silicon

    International Nuclear Information System (INIS)

    Bouaicha, M.; Khardani, M.; Bessais, B.

    2006-01-01

    The effective electrical conductivity of p type porous silicon is determined both theoretically and experimentally for different porosities ranging from 30% to 80%. In this work, Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon samples were prepared by the electrochemical etching method for different values of the anodic current. The porous material is assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of a PS layer, to the peak energy of its photoluminescence (PL) spectrum. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities. The results are discussed as regard to other works

  17. Formation Mechanism of Carbogenic Nanoparticles with Dual Photoluminescence Emission

    KAUST Repository

    Krysmann, Marta J.

    2012-01-18

    We present a systematic investigation of the formation mechanism of carbogenic nanoparticles (CNPs), otherwise referred to as C-dots, by following the pyrolysis of citric acid (CA)-ethanolamine (EA) precursor at different temperatures. Pyrolysis at 180 °C leads to a CNP molecular precursor with a strongly intense photoluminescence (PL) spectrum and high quantum yield formed by dehydration of CA-EA. At higher temperatures (230 °C) a carbogenic core starts forming and the PL is due to the presence of both molecular fluorophores and the carbogenic core. CNPs that exhibit mostly or exclusively PL arising from carbogenic cores are obtained at even higher temperatures (300 and 400 °C, respectively). Since the molecular fluorophores predominate at low pyrolysis temperatures while the carbogenic core starts forming at higher temperatures, the PL behavior of CNPs strongly depends on the conditions used for their synthesis. © 2011 American Chemical Society.

  18. Characterization of interfaces in semimagnetic quantum wells

    International Nuclear Information System (INIS)

    Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G.

    1995-01-01

    The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd 1-x Mn x Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd 1-x Mn x /CdTe/Cd 1-y Mg y Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author)

  19. Functionalization of graphene oxide nanostructures improves photoluminescence and facilitates their use as optical probes in preclinical imaging

    Science.gov (United States)

    Prabhakar, Neeraj; Näreoja, Tuomas; von Haartman, Eva; Şen Karaman, Didem; Burikov, Sergey A.; Dolenko, Tatiana A.; Deguchi, Takahiro; Mamaeva, Veronika; Hänninen, Pekka E.; Vlasov, Igor I.; Shenderova, Olga A.; Rosenholm, Jessica M.

    2015-06-01

    Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are attractive for biomedical imaging such as low toxicity and stable photoluminescence. In this study, the nGOs were organically surface-modified with poly(ethylene glycol)-poly(ethylene imine) (PEG-PEI) copolymers tagged with folic acid as the affinity ligand for cancer cells expressing folate receptors. The functionalization enhanced both the cellular uptake and quantum efficiency of the photoluminescence as compared to non-modified nGOs. The nGOs exhibited an excitation dependent photoluminescence that facilitated their detection with a wide range of microscope configurations. The functionalized nGOs were non-toxic, they were retained in the stained cell population over a period of 8 days and they were distributed equally between daughter cells. We have evaluated their applicability in in vitro and in vivo (chicken embryo CAM) models to visualize and track migratory cancer cells. The good biocompatibility and easy detection of the functionalized nGOs suggest that they could address the limitations faced with quantum dots and organic fluorophores in long-term in vivo biomedical imaging.Recently reported photoluminescent nanographene oxides (nGOs), i.e. nanographene oxidised with a sulfuric/nitric acid mixture (SNOx method), have tuneable photoluminescence and are scalable, simple and fast to produce optical probes. This material belongs to the vast class of photoluminescent carbon nanostructures, including carbon dots, nanodiamonds (NDs), graphene quantum dots (GQDs), all of which demonstrate a variety of properties that are

  20. The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

    International Nuclear Information System (INIS)

    Briones Cruz, Almira; Shen Qing; Toyoda, Taro

    2006-01-01

    Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

  1. Absolute flux scale for radioastronomy

    International Nuclear Information System (INIS)

    Ivanov, V.P.; Stankevich, K.S.

    1986-01-01

    The authors propose and provide support for a new absolute flux scale for radio astronomy, which is not encumbered with the inadequacies of the previous scales. In constructing it the method of relative spectra was used (a powerful tool for choosing reference spectra). A review is given of previous flux scales. The authors compare the AIS scale with the scale they propose. Both scales are based on absolute measurements by the ''artificial moon'' method, and they are practically coincident in the range from 0.96 to 6 GHz. At frequencies above 6 GHz, 0.96 GHz, the AIS scale is overestimated because of incorrect extrapolation of the spectra of the primary and secondary standards. The major results which have emerged from this review of absolute scales in radio astronomy are summarized

  2. The world of quantum matter

    CERN Multimedia

    CERN. Geneva

    2006-01-01

    In my lecture series, I will present the recent spectacular advances in the field of quantum gases and macroscopic quantum physics. A variety of subjects will be covered including Bose condensates and degenerate Fermi gases, ultracold molecules and chemistry near absolute zero, Rydberg gases, single-atom manipulation, quantum information processing, as well as applications of cold atoms as precision targets. The topics of the lectures are: I. Physics near absolute zero II. Bose condensation and Fermi degeneracy III. Molecules, Rydberg gases and other exotic species IV. Single-atom manipulation, quantum information processing and ultracold atoms as targets in storage rings

  3. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon; Yassitepe, Emre; Voznyy, Oleksandr; Comin, Riccardo; Walters, Grant; Gong, Xiwen; Kanjanaboos, Pongsakorn; Nogueira, Ana F.; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  4. Efficient Luminescence from Perovskite Quantum Dot Solids

    KAUST Repository

    Kim, Younghoon

    2015-11-18

    © 2015 American Chemical Society. Nanocrystals of CsPbX3 perovskites are promising materials for light-emitting optoelectronics because of their colloidal stability, optically tunable bandgap, bright photoluminescence, and excellent photoluminescence quantum yield. Despite their promise, nanocrystal-only films of CsPbX3 perovskites have not yet been fabricated; instead, highly insulating polymers have been relied upon to compensate for nanocrystals\\' unstable surfaces. We develop solution chemistry that enables single-step casting of perovskite nanocrystal films and overcomes problems in both perovskite quantum dot purification and film fabrication. Centrifugally cast films retain bright photoluminescence and achieve dense and homogeneous morphologies. The new materials offer a platform for optoelectronic applications of perovskite quantum dot solids.

  5. High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

    Science.gov (United States)

    Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

    2015-03-24

    A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

  6. Photoluminescence light-up detection of zinc ion and imaging in living cells based on the aggregation induced emission enhancement of glutathione-capped copper nanoclusters.

    Science.gov (United States)

    Lin, Liyun; Hu, Yuefang; Zhang, Liangliang; Huang, Yong; Zhao, Shulin

    2017-08-15

    In this work, we prepared glutathione (GSH)-capped copper nanoclusters (Cu NCs) with red emission by simply adjusting the pH of GSH/Cu 2+ mixture at room temperature. A photoluminescence light-up method for detecting Zn 2+ was then developed based on the aggregation induced emission enhancement of GSH-capped Cu NCs. Zn 2+ could trigger the aggregation of Cu NCs, inducing the enhancement of luminescence and the increase of absolute quantum yield from 1.3% to 6.2%. GSH-capped Cu NCs and the formed aggregates were characterized, and the possible mechanism was also discussed. The prepared GSH-capped Cu NCs exhibited a fast response towards Zn 2+ and a wider detection range from 4.68 to 2240μM. The detection limit (1.17μM) is much lower than that of the World Health Organization permitted in drinking water. Furthermore, taking advantages of the low cytotoxicity, large Stokes shift, red emission and light-up detection mode, we explored the use of the prepared GSH-capped Cu NCs in the imaging of Zn 2+ in living cells. The developed luminescence light-up nanoprobe may hold the potentials for Zn 2+ -related drinking water safety and biological applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. Relativistic Absolutism in Moral Education.

    Science.gov (United States)

    Vogt, W. Paul

    1982-01-01

    Discusses Emile Durkheim's "Moral Education: A Study in the Theory and Application of the Sociology of Education," which holds that morally healthy societies may vary in culture and organization but must possess absolute rules of moral behavior. Compares this moral theory with current theory and practice of American educators. (MJL)

  8. Forcing absoluteness and regularity properties

    NARCIS (Netherlands)

    Ikegami, D.

    2010-01-01

    For a large natural class of forcing notions, we prove general equivalence theorems between forcing absoluteness statements, regularity properties, and transcendence properties over L and the core model K. We use our results to answer open questions from set theory of the reals.

  9. Some absolutely effective product methods

    Directory of Open Access Journals (Sweden)

    H. P. Dikshit

    1992-01-01

    Full Text Available It is proved that the product method A(C,1, where (C,1 is the Cesàro arithmetic mean matrix, is totally effective under certain conditions concerning the matrix A. This general result is applied to study absolute Nörlund summability of Fourier series and other related series.

  10. High-amplitude THz and GHz strain waves, generated by ultrafast screening of piezoelectric fields in InGaN/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; van Capel, P.J.S.; Turchinovich, Dmitry

    2010-01-01

    Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening.......Screening of large built-in piezoelectric fields in InGaN/GaN quantum wells leads to high-amplitude acoustic emission. We will compare acoustic emission by quantum wells with different thicknesses with photoluminescence; indicating screening....

  11. Photoluminescence from CdxHg1-xTe

    International Nuclear Information System (INIS)

    Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R

    2008-01-01

    We present important aspects of photoluminescence (PL) of Cd x Hg 1-x Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd 0.36 Hg 0.64 Te/Cd 0.61 Hg 0.39 Te multiple quantum well structure grown on a 4 μm thick Cd 0.36 Hg 0.64 Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above ∼200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to ∼200 K

  12. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  13. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    International Nuclear Information System (INIS)

    Torres-Torres, C.; García-Cruz, M.L.; Castañeda, L.; Rangel Rojo, R.; Tamayo-Rivera, L.; Maldonado, A.; Avendaño-Alejo, M.

    2012-01-01

    Chromium doped zinc oxide thin solid films were deposited on soda–lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol–gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: ► Enhancement in photoluminescence for chromium doped zinc oxide films is presented. ► A strong and ultrafast optical Kerr effect seems to result from quantum confinement. ► Photoconductive properties for optical and optoelectronic functions were observed.

  15. Photoconductivity, photoluminescence and optical Kerr nonlinear effects in zinc oxide films containing chromium nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Torres, C., E-mail: crstorres@yahoo.com.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, Mexico, DF 07738 (Mexico); Garcia-Cruz, M.L. [Centro de Investigacion en Dispositivos Semiconductores, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Castaneda, L., E-mail: luisca@sirio.ifuap.buap.mx [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, A. P. J-48, Puebla 72570, Mexico (Mexico); Rangel Rojo, R. [CICESE/Depto. de Optica, A. P. 360, Ensenada, BC 22860 (Mexico); Tamayo-Rivera, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Mexico, DF 01000 (Mexico); Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN-SEES, A. P. 14740, Mexico DF 07000 (Mexico); Avendano-Alejo, M., E-mail: imax_aa@yahoo.com.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, A. P. 70-186, 04510, DF (Mexico); and others

    2012-04-15

    Chromium doped zinc oxide thin solid films were deposited on soda-lime glass substrates. The photoconductivity of the material and its influence on the optical behavior was evaluated. A non-alkoxide sol-gel synthesis approach was used for the preparation of the samples. An enhancement of the photoluminescence response exhibited by the resulting photoconductive films with embedded chromium nanoclusters is presented. The modification in the photoconduction induced by a 445 nm wavelength was measured and then associated with the participation of the optical absorptive response. In order to investigate the third order optical nonlinearities of the samples, a standard time-resolved Optical Kerr Gate configuration with 80 fs pulses at 830 nm was used and a quasi-instantaneous pure electronic nonlinearity without the contribution of nonlinear optical absorption was observed. We estimate that from the inclusion of Cr nanoclusters into the sample results a strong optical Kerr effect originated by quantum confinement. The large photoluminescence response and the important refractive nonlinearity of the photoconductive samples seem to promise potential applications for the development of multifunctional all-optical nanodevices. - Highlights: Black-Right-Pointing-Pointer Enhancement in photoluminescence for chromium doped zinc oxide films is presented. Black-Right-Pointing-Pointer A strong and ultrafast optical Kerr effect seems to result from quantum confinement. Black-Right-Pointing-Pointer Photoconductive properties for optical and optoelectronic functions were observed.

  16. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  17. Photoluminescence, trap states and thermoluminescence decay ...

    Indian Academy of Sciences (India)

    Administrator

    Photoluminescence, trap states and thermoluminescence decay process study of Ca2MgSi2O7 : Eu. 2+. , Dy. 3+ phosphor. RAVI SHRIVASTAVA*, JAGJEET KAUR, VIKAS DUBEY and BEENA JAYKUMAR. Govt. VYT PG Autonomous College, Durg 491 001, (C.G.) India. MS received 9 July 2013; revised 5 December 2013.

  18. Microwave Assisted Synthesis and Photoluminescence Properties of ...

    Indian Academy of Sciences (India)

    46

    earth doping of ZnS would not lead to sufficiently bright PL materials. As a result, several new ... photoluminescence characteristics of ZnS nanoparticles doped with Pb2+. New luminescent ..... Papers, San Francisco, CA, USA, 249. [6] Tanaka ...

  19. Moral absolutism and ectopic pregnancy.

    Science.gov (United States)

    Kaczor, C

    2001-02-01

    If one accepts a version of absolutism that excludes the intentional killing of any innocent human person from conception to natural death, ectopic pregnancy poses vexing difficulties. Given that the embryonic life almost certainly will die anyway, how can one retain one's moral principle and yet adequately respond to a situation that gravely threatens the life of the mother and her future fertility? The four options of treatment most often discussed in the literature are non-intervention, salpingectomy (removal of tube with embryo), salpingostomy (removal of embryo alone), and use of methotrexate (MXT). In this essay, I review these four options and introduce a fifth (the milking technique). In order to assess these options in terms of the absolutism mentioned, it will also be necessary to discuss various accounts of the intention/foresight distinction. I conclude that salpingectomy, salpingostomy, and the milking technique are compatible with absolutist presuppositions, but not the use of methotrexate.

  20. Absolute magnitudes by statistical parallaxes

    International Nuclear Information System (INIS)

    Heck, A.

    1978-01-01

    The author describes an algorithm for stellar luminosity calibrations (based on the principle of maximum likelihood) which allows the calibration of relations of the type: Msub(i)=sup(N)sub(j=1)Σqsub(j)Csub(ij), i=1,...,n, where n is the size of the sample at hand, Msub(i) are the individual absolute magnitudes, Csub(ij) are observational quantities (j=1,...,N), and qsub(j) are the coefficients to be determined. If one puts N=1 and Csub(iN)=1, one has q 1 =M(mean), the mean absolute magnitude of the sample. As additional output, the algorithm provides one also with the dispersion in magnitude of the sample sigmasub(M), the mean solar motion (U,V,W) and the corresponding velocity ellipsoid (sigmasub(u), sigmasub(v), sigmasub(w). The use of this algorithm is illustrated. (Auth.)

  1. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  2. Absolute gravity measurements in California

    Science.gov (United States)

    Zumberge, M. A.; Sasagawa, G.; Kappus, M.

    1986-08-01

    An absolute gravity meter that determines the local gravitational acceleration by timing a freely falling mass with a laser interferometer has been constructed. The instrument has made measurements at 11 sites in California, four in Nevada, and one in France. The uncertainty in the results is typically 10 microgal. Repeated measurements have been made at several of the sites; only one shows a substantial change in gravity.

  3. The Absolute Immanence in Deleuze

    OpenAIRE

    Park, Daeseung

    2013-01-01

    The absolute immanence in Deleuze Daeseung Park Abstract The plane of immanence is not unique. Deleuze and Guattari suppose a multiplicity of planes. Each great philosopher draws new planes on his own way, and these planes constitute the "time of philosophy". We can, therefore, "present the entire history of philosophy from the viewpoint of the institution of a plane of immanence" or present the time of philosophy from the viewpoint of the superposition and of the coexistence of planes. Howev...

  4. Photoluminescent lanthanide-organic bilayer networks with 2,3-pyrazinedicarboxylate and oxalate.

    Science.gov (United States)

    Soares-Santos, Paula C R; Cunha-Silva, Luís; Paz, Filipe A Almeida; Ferreira, Rute A S; Rocha, João; Carlos, Luís D; Nogueira, Helena I S

    2010-04-05

    The hydrothermal reaction between lanthanide nitrates and 2,3-pyrazinedicarboxylic acid led to a new series of two-dimensional (2D) lanthanide-organic frameworks: [Ln(2)(2,3-pzdc)(2)(ox)(H(2)O)(2)](n) [where 2,3-pzdc(2-) = 2,3-pyrazinedicarboxylate, ox(2-) = oxalate, and Ln(III) = Ce, Nd, Sm, Eu, Gd, Tb, or Er]. The structural details of these materials were determined by single-crystal X-ray diffraction (for Ce(3+) and Nd(3+)) that revealed the formation of a layered structure. Cationic monolayers of {(infinity)(2)[Ln(2,3-pzdc)(H(2)O)](+)} are interconnected via the ox(2-) ligand leading to the formation of neutral (infinity)(2)[Ln(2)(2,3-pzdc)(2)(ox)(H(2)O)(2)] bilayer networks; structural cohesion of the crystalline packing is reinforced by the presence of highly directional O-H...O hydrogen bonds between adjacent bilayers. Under the employed hydrothermal conditions 2,3-pyrazinedicarboxylic acid can be decomposed into ox(2-) and 2-pyrazinecarboxylate (2-pzc(-)), as unequivocally proved by the isolation of the discrete complex [Tb(2)(2-pzc)(4)(ox)(H(2)O)(6)].10H(2)O. Single-crystal X-ray diffraction of this latter complex revealed its co-crystallization with an unprecedented (H(2)O)(16) water cluster. Photoluminescence measurements were performed for the Nd(3+), Sm(3+), Eu(3+), and Tb(3+) compounds which show, under UV excitation at room temperature, the Ln(3+) characteristic intra-4f(N) emission peaks. The energy level of the triplet states of 2,3-pyrazinedicarboxylic acid (18939 cm(-1)) and oxalic acid (24570 cm(-1)) was determined from the 12 K emission spectrum of the Gd(3+) compound. The (5)D(0) and (5)D(4) lifetime values (0.333 +/- 0.006 and 0.577 +/- 0.017 ms) and the absolute emission quantum yields (0.13 +/- 0.01 and 0.05 +/- 0.01) were determined for the Eu(3+) and Tb(3+) compounds, respectively. For the Eu(3+) compound the energy transfer efficiency arising from the ligands' excited states was estimated (0.93 +/- 0.01).

  5. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

    International Nuclear Information System (INIS)

    Saxena, Shailendra K.; Rai, Hari. M.; Late, Ravikiran; Sagdeo, Pankaj R.; Kumar, Rajesh

    2015-01-01

    In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence

  6. Photoluminescence and radiation response properties of Ce3+-doped CsCaCl3 crystalline scintillator

    International Nuclear Information System (INIS)

    Fujimoto, Yutaka; Saeki, Keiichiro; Tanaka, Hironori; Yahaba, Takuma; Koshimizu, Masanori; Asai, Keisuke; Yanagida, Takayuki

    2016-01-01

    In this paper, we report on the photoluminescence and scintillation properties of a newly developed CsCaCl 3 :Ce (0.5 mol%) crystalline scintillator grown by the vertical Bridgman method. The fluorescence quantum efficiency for the Ce 3+ characteristic emission bands centered at around 350–400 nm was 76% under excitation at 330 nm light. The photoluminescence decay time of the Ce 3+ was approximately 32 ns. When x-ray excited the crystal, intense emission bands were observed at 350–400 nm, and could be attributed to the Ce 3+ emission. The scintillation light yield of the developed crystal was ∼7600 ph MeV −1 compared to a NaI:Tl commercial scintillator, and the principal scintillation decay time was approximately 340 ns plus two fast components of around 1.6 ns and 45 ns. (paper)

  7. MOVPE grown InGaAs quantum dots of high optical quality as seed layer for low-density InP quantum dots

    International Nuclear Information System (INIS)

    Richter, D; Hafenbrak, R; Joens, K D; Schulz, W-M; Eichfelder, M; Rossbach, R; Jetter, M; Michler, P

    2010-01-01

    To achieve a low density of optically active InP-quantum dots we used InGaAs islands embedded in GaAs as a seed layer. First, the structural InGaAs quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 μeV and fine structure splittings of 25 μeV. Furthermore, using these InGaAs quantum dots as seed layer reduces the InP quantum dot density of optically active quantum dots drastically. InP quantum dot excitonic photoluminescence emission with a linewidth of 140 μeV has been observed.

  8. Carrier dynamics in submonolayer InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Zhang, Yating; Hvam, Jørn Märcher

    2006-01-01

    Carrier dynamics of submonolayer InGaAs/GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon...

  9. Self-assembly of concentric quantum double rings.

    Science.gov (United States)

    Mano, Takaaki; Kuroda, Takashi; Sanguinetti, Stefano; Ochiai, Tetsuyuki; Tateno, Takahiro; Kim, Jongsu; Noda, Takeshi; Kawabe, Mitsuo; Sakoda, Kazuaki; Kido, Giyuu; Koguchi, Nobuyuki

    2005-03-01

    We demonstrate the self-assembled formation of concentric quantum double rings with high uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the growth process conditions can control each ring's size. Photoluminescence spectra emitted from an individual quantum ring complex show peculiar quantized levels that are specified by the carriers' orbital trajectories.

  10. Multi-Excitonic Quantum Dot Molecules

    Science.gov (United States)

    Scheibner, M.; Stinaff, E. A.; Doty, M. F.; Ware, M. E.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    With the ability to create coupled pairs of quantum dots, the next step towards the realization of semiconductor based quantum information processing devices can be taken. However, so far little knowledge has been gained on these artificial molecules. Our photoluminescence experiments on single InAs/GaAs quantum dot molecules provide the systematics of coupled quantum dots by delineating the spectroscopic features of several key charge configurations in such quantum systems, including X, X^+,X^2+, XX, XX^+ (with X being the neutral exciton). We extract general rules which determine the formation of molecular states of coupled quantum dots. These include the fact that quantum dot molecules provide the possibility to realize various spin configurations and to switch the electron hole exchange interaction on and off by shifting charges inside the molecule. This knowledge will be valuable in developing implementations for quantum information processing.

  11. Photoluminescence of Turkish purple jade (turkiyenite)

    International Nuclear Information System (INIS)

    Hatipoğlu, Murat; Başevirgen, Yasemin

    2012-01-01

    The purple-colored unique gem material is only found in the Harmancık (Bursa) region of the western Anatolia (Turkey). Therefore, it is specially called “Turkish purple jade or turkiyenite” on the worldwide gem market. Even though its jadeite implication is the principal constituent, the material cannot be considered as a single jadeite mineral since other implications are quartz, orthoclase, epidote, chloritoid and phlogopite minerals. Even if the analytical methods are used to characterize and identify the Turkish purple jade samples in detail, the luminescence spectra, especially photoluminescence features regarding to composite mineral implications of the material are important because of the existence the numerous characteristic broad and intensive luminescence bands in the samples. We can state that the UV-irradiation luminescence centers as photoluminescence (PL) are due to the overall signals in the Turkish purple jade samples. Accordingly, the distinctive photoluminescence peaks at 743, 717, 698, 484, 465 and 442 nm in PL-2D (counter diagram and sections) and PL-3D (sequence spectra) ranging between 300 and 900 nm of wavelengths, and between 220 and 340 K of temperatures are observed. Finally, photoluminescence features of the heterogeneous-structured material cannot be simply attributed to any chemical impurities, since the jade mass has numerous heterogeneous mineral constituents instead of a single jadeite mineral. Six different mineral implications and chemical impurities in the material composition display complex and individual all kind of luminescence features. Therefore, photoluminescence as well as radioluminescence, cathodoluminescence and thermoluminescence spectra provide positive identification regarding to the provenance (geographic origin) of the original Turkish purple jade (turkiyenite). - Highlights: ► The purple-colored gem material is only found in the Harmancık-Bursa region of Turkey. ► Material is called “Turkish purple

  12. Android Apps for Absolute Beginners

    CERN Document Server

    Jackson, Wallace

    2011-01-01

    Anybody can start building simple apps for the Android platform, and this book will show you how! Android Apps for Absolute Beginners takes you through the process of getting your first Android applications up and running using plain English and practical examples. It cuts through the fog of jargon and mystery that surrounds Android application development, and gives you simple, step-by-step instructions to get you started.* Teaches Android application development in language anyone can understand, giving you the best possible start in Android development * Provides simple, step-by-step exampl

  13. Nonradiative recombination in GaN quantum dots formed in the AlN matrix

    International Nuclear Information System (INIS)

    Aleksandrov, I. A.; Zhuravlev, K. S.; Mansurov, V. G.

    2009-01-01

    The mechanisms of temperature quenching of steady-state photoluminescence are studied for structures with hexagonal GaN quantum dots embedded in the AlN matrix. The structures are grown by molecular beam epitaxy. The study is conducted for structures with differently sized quantum dots, for which the peak of the photoluminescence band is in the range from 2.5 to 4.0 eV. It is found that the activation energy of thermal quenching of photoluminescence varies from 27 to 110 meV, as the quantum-dot height is decreased from 5 to 2 nm. A model is suggested to interpret the results. According to the model, the photo-luminescence signal is quenched because of the transfer of charge carriers from energy levels in the quantum dots to defect levels in the matrix.

  14. Reversible Concentration-Dependent Photoluminescence Quenching and Change of Emission Color in CsPbBr3 Nanowires and Nanoplatelets.

    Science.gov (United States)

    Di Stasio, Francesco; Imran, Muhammad; Akkerman, Quinten A; Prato, Mirko; Manna, Liberato; Krahne, Roman

    2017-06-15

    We discuss the photoluminescence (PL) of quantum-confined CsPbBr 3 colloidal nanocrystals of two different shapes (nanowires and nanoplatelets) at different concentrations in solution and in solid-state films. Upon increasing the nanocrystal concentration in solution, a constant drop in photoluminescence quantum yield is observed, accompanied by a significant PL red shift. This effect is reversible, and the original PL can be restored by diluting to the original concentration. We show that this effect can be in part attributed to self-absorption and partly to aggregation. In particular, for nanoplatelets, where the aggregation is mostly irreversible, while the self-absorption effect is reversible, the two contributions can be well separated. Finally, when dry solid-state films are prepared, the emission band is shifted into the green spectral region, close to the bulk CsPbBr 3 band gap, thus preventing blue emission from such films.

  15. Preparation and Photoluminescence of Tungsten Disulfide Monolayer

    Directory of Open Access Journals (Sweden)

    Yanfei Lv

    2018-05-01

    Full Text Available Tungsten disulfide (WS2 monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2.

  16. Defect-mediated photoluminescence up-conversion in cadmium sulfide nanobelts (Conference Presentation)

    Science.gov (United States)

    Morozov, Yurii; Kuno, Masaru K.

    2017-02-01

    The concept of optical cooling of solids has existed for nearly 90 years ever since Pringsheim proposed a way to cool solids through the annihilation of phonons via phonon-assisted photoluminescence (PL) up-conversion. In this process, energy is removed from the solid by the emission of photons with energies larger than those of incident photons. However, actually realizing optical cooling requires exacting parameters from the condensed phase medium such as near unity external quantum efficiencies as well as existence of a low background absorption. Until recently, laser cooling has only been successfully realized in rare earth doped solids. In semiconductors, optical cooling has very recently been demonstrated in cadmium sulfide (CdS) nanobelts as well as in hybrid lead halide perovskites. For the former, large internal quantum efficiencies, sub-wavelength thicknesses, which decrease light trapping, and low background absorption, all make near unity external quantum yields possible. Net cooling by as much as 40 K has therefore been possible with CdS nanobelts. In this study, we describe a detailed investigation of the nature of efficient anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature-dependent PL up-conversion and optical absorption studies on individual NBs together with frequency-dependent up-converted PL intensity spectroscopies suggest that ASPL in CdS nanobelts is defect-mediated through involvement of defect levels below the band gap.

  17. Spectral Irradiance Calibration in the Infrared. XIV: the Absolute Calibration of 2MASS

    OpenAIRE

    Cohen, Martin; Wheaton, Wm. A.; Megeath, S. T.

    2003-01-01

    Element-by-element we have combined the optical components in the three 2MASS cameras, and incorporated detector quantum efficiency curves and site-specific atmospheric transmissions, to create three relative spectral response curves (RSRs). We provide absolute 2MASS attributes associated with "zero magnitude" in the JHKs bands so that these RSRs may be used for synthetic photometry. The RSRs tie 2MASS to the Cohen-Walker-Witteborn framework of absolute photometry and spectra for the purpose ...

  18. Absolute pitch: a case study.

    Science.gov (United States)

    Vernon, P E

    1977-11-01

    The auditory skill known as 'absolute pitch' is discussed, and it is shown that this differs greatly in accuracy of identification or reproduction of musical tones from ordinary discrimination of 'tonal height' which is to some extent trainable. The present writer possessed absolute pitch for almost any tone or chord over the normal musical range, from about the age of 17 to 52. He then started to hear all music one semitone too high, and now at the age of 71 it is heard a full tone above the true pitch. Tests were carried out under controlled conditions, in which 68 to 95 per cent of notes were identified as one semitone or one tone higher than they should be. Changes with ageing seem more likely to occur in the elasticity of the basilar membrane mechanisms than in the long-term memory which is used for aural analysis of complex sounds. Thus this experience supports the view that some resolution of complex sounds takes place at the peripheral sense organ, and this provides information which can be incorrect, for interpretation by the cortical centres.

  19. Absolute measurement of 152Eu

    International Nuclear Information System (INIS)

    Baba, Hiroshi; Baba, Sumiko; Ichikawa, Shinichi; Sekine, Toshiaki; Ishikawa, Isamu

    1981-08-01

    A new method of the absolute measurement for 152 Eu was established based on the 4πβ-γ spectroscopic anti-coincidence method. It is a coincidence counting method consisting of a 4πβ-counter and a Ge(Li) γ-ray detector, in which the effective counting efficiencies of the 4πβ-counter for β-rays, conversion electrons, and Auger electrons were obtained by taking the intensity ratios for certain γ-rays between the single spectrum and the spectrum coincident with the pulses from the 4πβ-counter. First, in order to verify the method, three different methods of the absolute measurement were performed with a prepared 60 Co source to find excellent agreement among the results deduced by them. Next, the 4πβ-γ spectroscopic coincidence measurement was applied to 152 Eu sources prepared by irradiating an enriched 151 Eu target in a reactor. The result was compared with that obtained by the γ-ray spectrometry using a 152 Eu standard source supplied by LMRI. They agreed with each other within the error of 2%. (author)

  20. Photoluminescence lineshape of ZnO

    Directory of Open Access Journals (Sweden)

    Bruno Ullrich

    2014-12-01

    Full Text Available The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques.

  1. Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

    International Nuclear Information System (INIS)

    Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

    2011-01-01

    We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

  2. Absolutely small how quantum theory explains our everyday world

    CERN Document Server

    Fayer, Michael D

    2010-01-01

    Physics is a complex, even daunting topic, but it is also deeply satisfying-even thrilling. And liberated from its mathematical underpinnings, physics suddenly becomes accessible to anyone with the curiosity and imagination to explore its beauty. Science without math? It's not that unusual. For example, we can understand the concept of gravity without solving a single equation. So for all those who may have pondered what makes blueberries blue and strawberries red; for those who have wondered if sound really travels in waves; and why light behaves so differently from any other phenomenon in th

  3. Quantum dot-polymer conjugates for stable luminescent displays.

    Science.gov (United States)

    Ghimire, Sushant; Sivadas, Anjaly; Yuyama, Ken-Ichi; Takano, Yuta; Francis, Raju; Biju, Vasudevanpillai

    2018-05-23

    The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices. One of the primary requirements for such real-world applications of quantum dots is their stable and uniform distribution in optically transparent matrices. In this work, we prepare transparent thin films of polymer-quantum dot conjugates, where CdSe/ZnS quantum dots are uniformly distributed at high densities in a chitosan-polystyrene copolymer (CS-g-PS) matrix. Here, quantum dots in an aqueous solution are conjugated to the copolymer by a phase transfer reaction. With the stable conjugation of quantum dots to the copolymer, we prevent undesired phase separation between the two and aggregation of quantum dots. Furthermore, the conjugate allows us to prepare transparent thin films in which quantum dots are uniformly distributed at high densities. The CS-g-PS copolymer helps us in not only preserving the photoluminescence properties of quantum dots in the film but also rendering excellent photostability to quantum dots at the ensemble and single particle levels, making the conjugate a promising material for photoluminescence-based devices.

  4. Optical anisotropy in vertically coupled quantum dots

    DEFF Research Database (Denmark)

    Yu, Ping; Langbein, Wolfgang Werner; Leosson, Kristjan

    1999-01-01

    We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single...... number due to increasing dot size....

  5. Quantum optics

    National Research Council Canada - National Science Library

    Agarwal, G. S

    2013-01-01

    .... Focusing on applications of quantum optics, the textbook covers recent developments such as engineering of quantum states, quantum optics on a chip, nano-mechanical mirrors, quantum entanglement...

  6. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  7. Absolute measurement of 85Sr

    International Nuclear Information System (INIS)

    Miyahara, Hiroshi; Watanabe, Tamaki

    1978-01-01

    An extension of 4πe.x-γ coincidence technique is described to measure the absolute disintegration rate of 85 Sr. This nuclide shows electron capture-gamma decay, and 514keV level of 85 Rb is a meta-stable state with half life of 0.958 μsec. Therefore, the conventional 4 πe.x-γ coincidence technique with about 1 μsec of resolution time can not be applied to this nuclide. To measure the absolute disintegration rate of this, the delayed 4 πe.x-γ coincidence technique with two different resolution time has been used. The disintegration rate was determined from four counting rates of electron-x ray, gamma ray and two coincidences, and the true disintegration rate could be obtained by extraporation of the electron-x ray detection efficiency to 1. Two resolution time appearing in the calculation formulas were determined from the chance coincidence between electron-x ray and delayed gamma ray signals. When the coincidence countings with three different resolution time were carried out by one coincidence circuit, the results calculated from all combinations did not agree each other. However, when the two coincidence circuits of the same type were used to fix the resolution time, a good coincidence absorption function was obtained and the disintegration rate was determined with accuracy of +- 0.5%. To evaluate the validity of the results the disintegration rates were measured by two NaI (Tl) scintillation detectors whose gamma-ray detection efficiency was previously determined and both results were agreed within accuracy of +- 0.5%. This method can be applied with nearly same accuracy for the beta-gamma decay nuclide possessing a meta-stable state of the half life below about 10 μsec. (auth.)

  8. Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Rihani, J.; Sallet, V.; Yahyaoui, N.; Harmand, J.C.; Oueslati, M.; Chtourou, R.

    2009-01-01

    Self-assembled InAs quantum dots (QDs) on GaAs(0 0 1) substrate were grown by molecular beam epitaxy (MBE) at a growth temperature of 490 deg. C. Two different families of dots were observed in the atomic force microscopy (AFM) image and ambiguously identified in the photoluminescence (PL) spectra. Temperature-dependent PL study was carried out in the 8-270 K temperature range. The integrated-PL intensity behavior of the two QDs populations was fit with the help of a rate equations model. It is found that the evolutions of the integrated-PL intensity of the two QDs population were governed by two regimes. The first one occurs in the 8-210 K temperature range and reveals an unusual enhancement of the integrated-PL intensity of the larger QDs (LQDs) class. This was attributed to the carrier supplies from the smaller QDs (SQDs) class via the tunneling process. The second one occurs in the 210-270 K temperature range and shows a common quench of the PL signals of the two QDs families, reflecting the same thermal escape mechanism of carriers

  9. Femtosecond transient photoluminescence of the substituted poly(diphenylacetulene)s.

    Science.gov (United States)

    Piskun, N. V.; Wang, D. K.; Lim, H.; Epstein, A. J.; Vanwoerkom, L. D.; Gustafson, T. L.

    2000-03-01

    We present the results of a femtosecond transient photoluminescence (PL) study of solutions of two derivatives of substituted poly(diphenylacetylene) using an up-conversion technique. n-Butyl (nBu) and p-carbazole (Cz) substituted poly(diphenylacetylene), PDPA-nBu and PDPA-Cz respectively, have band gaps determined by maxima in the slope of absorption vs. energy of 2.75 eV and 2.63 eV. The steady state emission peaks are at 2.4 eV for PDPA-nBu and at 2.3 eV for PDPA-Cz respectively. The PL peak for PDPA-Cz is red shifted in comparison to the PL peak for PDPA-nBu. Roles of phenyl groups, electron donating effect of the carbazole side units and planarity of the backbone are discussed. Exciting at 3.1 eV, the fs PL shows a faster decay for PDPA-Cz than that for PDPA-nBu, in accord with the decrease of PL quantum efficiency of PDPA-Cz. The 200 fs - 80 ps PL(t) agrees with ~1 ns lifetime. The PDPA-Cz has larger red shift in the 0.2-20 ps time frame. The origin of that shift will be discussed. This work is supported in part by ONR.

  10. Controlled fabrication and tunable photoluminescence properties of Mn2+ doped graphene–ZnO composite

    International Nuclear Information System (INIS)

    Luan, Xinglong; Zhang, Yihe; Tong, Wangshu; Shang, Jiwu; An, Qi; Huang, Hongwei

    2014-01-01

    Highlights: • Graphene–ZnO composites were synthesized by a mixed solvothermal method. • ZnO quantum dots are distributed uniformly on the graphene sheets. • A possible hypothesis is raised for the influence of graphene oxide on the nucleation of ZnO. • Mn 2+ doped graphene–ZnO composites were fabricated and the emission spectra can be tuned by doping. - Abstract: Graphene–ZnO composites (G–ZnO) with controlled morphology and photoluminescence property were synthesized by a mixed solvothermal method. Mixed solvent were composed by dimethyl sulfoxide and ethylene glycol. Fourier transform infrared spectroscopy, transmission electron microscopy and photoluminescence spectra were used to characterize G–ZnO. Graphene as a substrate can help the distribution and the dispersity of ZnO, and a possible model of the interaction between graphene oxide and ZnO particles is proposed. At the same time, graphene also reduce the size of ZnO particles to about 5 nm. Furthermore, Mn 2+ ions dopes G–ZnO successfully by the mixed solvothermal synthesis and the doping of Mn 2+ makes G–ZnO shift red from 465 nm to 548 nm and 554 nm in the emission spectrum. The changes of the emission spectrum by the adding of Mn 2+ make G–ZnO have tunable photoluminescence spectrum which is desirable for practical applications

  11. Hydrophobic perfluoro-silane functionalization of porous silicon photoluminescent films and particles

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, C.; Laplace, P.; Gallach-Pérez, D.; Pellacani, P.; Martín-Palma, R.J. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Torres-Costa, V. [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, 28049, Madrid (Spain); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020, Ispra (Italy); Manso Silván, M., E-mail: miguel.manso@uam.es [Departamento de Física Aplicada e Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma de Madrid, 28049, Madrid (Spain)

    2016-09-01

    Highlights: • Hydrophobic functionalization of porous silicon structures. • Perfluorooctyl group binding confirmed by XPS. • Improved stability face to extreme oxidation conditions. • Perfluorooctyl functionalization compatible with photoluminescence of porous silicon particles. - Abstract: Luminescent structures based on semiconductor quantum dots (QDs) are increasingly used in biomolecular assays, cell tracking systems, and in-vivo diagnostics devices. In this work we have carried out the functionalization of porous silicon (PSi) luminescent structures by a perfluorosilane (Perfluoro-octyltriethoxysilane, PFOS) self assembly. The PFOS surface binding (traced by X-ray photoelectron spectroscopy) and photoluminescence efficiency were analyzed on flat model PSi. Maximal photoluminescence intensity was obtained from PSi layers anodized at 110 mA/cm{sup 2}. Resistance to hydroxylation was assayed in H{sub 2}O{sub 2}:ethanol solutions and evidenced by water contact angle (WCA) measurements. PFOS-functionalized PSi presented systematically higher WCA than untreated PSi. The PFOS functionalization was found to slightly improve the aging of the PSi particles in water giving rise to particles with longer luminescent life. Confirmation of PFOS binding to PSi particles was derived from FTIR spectra and the preservation of luminescence was observed by fluorescence microscopy. Such functionalization opens the possibility of promoting hydrophobic-hydrophobic interactions between biomolecules and fluorescent QD structures, which may enlarge their biomedical applications catalogue.

  12. Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

    International Nuclear Information System (INIS)

    Davis, J A; Dao, L V; Wen, X; Ticknor, C; Hannaford, P; Coleman, V A; Tan, H H; Jagadish, C; Koike, K; Sasa, S; Inoue, M; Yano, M

    2008-01-01

    Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength

  13. High quantum yield ZnO quantum dots synthesizing via an ultrasonication microreactor method.

    Science.gov (United States)

    Yang, Weimin; Yang, Huafang; Ding, Wenhao; Zhang, Bing; Zhang, Le; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-11-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic microreactor. Ultrasonic radiation brought bubbles through ultrasonic cavitation. These bubbles built microreactor inside the microreactor. The photoluminescence properties of ZnO quantum dots synthesized with different flow rate, ultrasonic power and temperature were discussed. Flow rate, ultrasonic power and temperature would influence the type and quantity of defects in ZnO quantum dots. The sizes of ZnO quantum dots would be controlled by those conditions as well. Flow rate affected the reaction time. With the increasing of flow rate, the sizes of ZnO quantum dots decreased and the quantum yields first increased then decreased. Ultrasonic power changed the ultrasonic cavitation intensity, which affected the reaction energy and the separation of the solution. With the increasing of ultrasonic power, sizes of ZnO quantum dots first decreased then increased, while the quantum yields kept increasing. The effect of ultrasonic temperature on the photoluminescence properties of ZnO quantum dots was influenced by the flow rate. Different flow rate related to opposite changing trend. Moreover, the quantum yields of ZnO QDs synthesized by ultrasonic microreactor could reach 64.7%, which is higher than those synthesized only under ultrasonic radiation or only by microreactor. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. Formation and photoluminescence of "Cauliflower" silicon nanoparticles

    NARCIS (Netherlands)

    Tang, W.; Eilers, J.J.; Huis, van M.A.; Wang, D.; Schropp, R.E.I.; Vece, Di M.

    2015-01-01

    The technological advantages of silicon make silicon nanoparticles, which can be used as quantum dots in a tandem configuration, highly relevant for photovoltaics. However, producing a silicon quantum dot solar cell structure remains a challenge. Here we use a gas aggregation cluster source to

  15. Thermal activation of carriers from semiconductor quantum wells

    International Nuclear Information System (INIS)

    Johnston, M.B.; Herz, L.M.; Dao, L.V.; Gal, M.; Tan, H.H.; Jagadish, C.

    1999-01-01

    Full text: We have conducted a systematic investigation of the thermal excitation of carriers in confined states of quantum wells. Carriers may be injected into a sample containing a quantum well electrically or optically, once there they rapidly thermalise and are captured by the confined state of the quantum well. Typically electrons and holes recombine radiatively from their respective quantum well states. As a quantum well sample is heated from low temperatures (∼10K), phonon interactions increase which leads to carriers being excited from the well region into the higher energy, barrier region of the sample. Since carrier recombination from barrier regions is via non-radiative processes, there is strong temperature dependence of photoluminescence from the quantum well region. We measured quantum well photoluminescence as a function of excitation intensity and wavelength over the temperature range from 8K to 300K. In high quality InGaAs quantum wells we found unexpected intensity dependence of the spectrally integrated temperature dependent photoluminescence. We believe that this is evidence for by the existence of saturable states at the interfaces of the quantum wells

  16. Photoluminescence of Er in SiOx

    International Nuclear Information System (INIS)

    Wan Jun; Sheng Chi; Lu Fang; Gong Dawei; Fan Yongliang; Lin Feng; Wang Xun

    1998-01-01

    Erbium-doped SiO x is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger spectroscopy. Photoluminescence (PL) peaks around the wave-length of 1.53 μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures ( 100 K)

  17. Photoluminescence study in diaminobenzene functionalized graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Abhisek, E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2014-10-15

    Being an excellent electronic material graphene is a very poor candidate for optoelectronic applications. One of the major strategies to develop the optical property in GO is the functionalization of graphene oxide (GO). In the present work GO sheets are functionalized by o-phenylenediamine to achieve diaminobenzene functionalized GO composite (DAB-GO). Formation of DAB-GO composite is further characterized by FTIR, UV, Raman studies. Excellent photoluminescence is observed in DAB-GO composite via passivation of the surface reactive sites by ring-opening amination of epoxides of GO.

  18. Gold Photoluminescence: Wavelength and Polarization Engineering

    DEFF Research Database (Denmark)

    Andersen, Sebastian Kim Hjælm; Pors, Anders Lambertus; Bozhevolnyi, Sergey I.

    2015-01-01

    We demonstrate engineering of the spectral content and polarization of photoluminescence (PL) from arrayed gold nanoparticles atop a subwavelength-thin dielectric spacer and optically-thick gold film, a configuration that supports gap-surface plasmon resonances (GSPRs). Choice of shapes...... and dimensions of gold nanoparticles influences the GSPR wavelength and polarization characteristics, thereby allowing us to enhance and spectrally mold the plasmon-assisted PL while simultaneously controlling its polarization. In order to understand the underlying physics behind the plasmon-enhanced PL, we...

  19. Photoluminescence and Photoconductivity to Assess Maximum Open-Circuit Voltage and Carrier Transport in Hybrid Perovskites and Other Photovoltaic Materials.

    Science.gov (United States)

    Braly, Ian L; Stoddard, Ryan J; Rajagopal, Adharsh; Jen, Alex K-Y; Hillhouse, Hugh W

    2018-06-06

    Photovoltaic (PV) device development is much more expensive and time consuming than the development of the absorber layer alone. This perspective focuses on two methods that can be used to rapidly assess and develop PV absorber materials independent of device development. The absorber material properties of quasi-Fermi level splitting and carrier diffusion length under steady effective one-Sun illumination are indicators of a material's ability to achieve high VOC and JSC. These two material properties can be rapidly and simultaneously assessed with steady-state absolute intensity photoluminescence and photoconductivity measurements. As a result, these methods are extremely useful for predicting the quality and stability of PV materials prior to PV device development. Here, we summarize the methods, discuss their strengths and weaknesses, and compare photoluminescence and photoconductivity results with device performance for four hybrid perovskite compositions of various bandgaps (1.35 to 1.82 eV), CISe, CIGSe, and CZTSe.

  20. The influence of nitrogen on the photoluminescence of metastable III-V nitrides

    International Nuclear Information System (INIS)

    Hantke, K.

    2005-01-01

    The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

  1. Direct Determination of Absolute Configuration of Methyl-Substituted Phenyloxiranes: A Combined Experimental and Theoretical Approach

    DEFF Research Database (Denmark)

    Fristrup, Peter; Lassen, Peter Rygaard; Johannessen, Christian

    2006-01-01

    obtained from quantum mechanical calculations (density functional theory with the B3LYP hybrid exchange correlation functional with 6-31++G**, aug-cc-pVDZ, or aug-cc-pVTZ basis set) and related to the physical structure of the compounds. The absolute configuration could be established directly in each case...

  2. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan

    2002-01-01

    We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction....

  3. New organically templated photoluminescence iodocuprates(I)

    International Nuclear Information System (INIS)

    Hou Qin; Zhao Jinjing; Zhao Tianqi; Jin Juan; Yu Jiehui; Xu Jiqing

    2011-01-01

    Two types of organic cyclic aliphatic diamine molecules piperazine (pip) and 1,3-bis(4-piperidyl)propane (bpp) were used, respectively, to react with an inorganic mixture of CuI and KI in the acidic CH 3 OH solutions under the solvothermal conditions, generating finally three new organically templated iodocuprates as 2-D layered [(Hpip)Cu 3 I 4 ] 1, 1-D chained [tmpip][Cu 2 I 4 ] 2 (tmpip=N,N,N',N'-tetramethylpiperazinium) and dinuclear [H 2 bpp] 2 [Cu 2 I 5 ] I.2H 2 O 3. Note that the templating agent tmpip 2+ in compound 2 originated from the in situ N-alkylation reaction between the pip molecule and the methanol solvent. The photoluminescence analysis indicates that the title compounds emit the different lights: yellow for 1, blue for 2 and yellow-green for 3, respectively. - Graphical abstract: The solvothermal self-assemblies of CuI, KI and pip/bpp in acidic CH 3 OH solutions created three iodocuprates 2-D layered [(Hpip)Cu 3 I 4 ] 1, 1-D chained [tmpip][Cu 2 I 4 ] 2 and dinuclear [H 2 bpp] 2 [Cu 2 I 5 ] I.2H 2 O 3. Highlights: → A new layered iodocuprate(I) with 20-membered rings was hydrothermally prepared. → A simple approach to prepare the new organic templating agent was reported. → Photoluminescence analysis indicates the emission for iodocuprate(I) is associated with the Cu...Cu interactions.

  4. Multicolor photoluminescence in ITQ-16 zeolite film

    KAUST Repository

    Chen, Yanli

    2016-09-07

    Exploring the native defects of zeolites is highly important for understanding the properties of zeolites, such as catalysis and optics. Here, ITQ-16 films were prepared via the secondary growth method in the presence of Ge atoms. Various intrinsic defects of ITQ-16 films were fully studied through photoluminescence and FTIR characterizations. It was found that both the as-synthesized and calcined ITQ-16 films displayed multicolor photoluminescence including ultraviolet, blue, green and red emissions by exciting upon appropriate wavelengths. The results indicate that Si―OH and non-bridging oxygen hole centers(NBOHCs) are responsible for the origin of green and red emissions at 540―800 nm, while according to a variety of emission bands of calcined ITQ-16 film, blue emission bands at around 446 and 462 nm are attributed to peroxy free radicals(≡SiO2), ultraviolet emissions ranging from 250 nm to 450 nm are suggested originating from a singlet-to-triplet transition of two-fold-coordinated Si and Ge, respectively. © 2016, Jilin University, The Editorial Department of Chemical Research in Chinese Universities and Springer-Verlag GmbH.

  5. Quantum phase transitions

    International Nuclear Information System (INIS)

    Sachdev, S.

    1999-01-01

    Phase transitions are normally associated with changes of temperature but a new type of transition - caused by quantum fluctuations near absolute zero - is possible, and can tell us more about the properties of a wide range of systems in condensed-matter physics. Nature abounds with phase transitions. The boiling and freezing of water are everyday examples of phase transitions, as are more exotic processes such as superconductivity and superfluidity. The universe itself is thought to have passed through several phase transitions as the high-temperature plasma formed by the big bang cooled to form the world as we know it today. Phase transitions are traditionally classified as first or second order. In first-order transitions the two phases co-exist at the transition temperature - e.g. ice and water at 0 deg., or water and steam at 100 deg. In second-order transitions the two phases do not co-exist. In the last decade, attention has focused on phase transitions that are qualitatively different from the examples noted above: these are quantum phase transitions and they occur only at the absolute zero of temperature. The transition takes place at the ''quantum critical'' value of some other parameter such as pressure, composition or magnetic field strength. A quantum phase transition takes place when co-operative ordering of the system disappears, but this loss of order is driven solely by the quantum fluctuations demanded by Heisenberg's uncertainty principle. The physical properties of these quantum fluctuations are quite distinct from those of the thermal fluctuations responsible for traditional, finite-temperature phase transitions. In particular, the quantum system is described by a complex-valued wavefunction, and the dynamics of its phase near the quantum critical point requires novel theories that have no analogue in the traditional framework of phase transitions. In this article the author describes the history of quantum phase transitions. (UK)

  6. Photoluminescence behavior of riboflavin and lumiflavin in liquid solutions and solid films

    Energy Technology Data Exchange (ETDEWEB)

    Penzkofer, A., E-mail: alfons.penzkofer@physik.uni-regensburg.de [Fakultaet fuer Physik, Universitaet Regensburg, Universitaetsstrasse 31, D-93053 Regensburg (Germany)

    2012-05-25

    Highlights: Black-Right-Pointing-Pointer Delayed fluorescence and phosphorescence spectra of flavins in starch films measured. Black-Right-Pointing-Pointer Quantum yield of singlet-triplet intersystem determined with a new approach. Black-Right-Pointing-Pointer Theory developed for determination of luminescence quantum yields of films. Black-Right-Pointing-Pointer Delayed fluorescence and phosphorescence lifetimes of flavins in starch films measured. Black-Right-Pointing-Pointer Singlet and triplet relevant parameters of riboflavin and lumiflavin determined. - Abstract: The absorption and emission behavior of riboflavin and lumiflavin in water, tetrahydrofuran (THF), water-starch, THF-polystyrene, starch films, and polystyrene films was studied at room temperature. Absorption cross-section spectra, fluorescence quantum distributions, and fluorescence quantum yields were determined. For the starch films additionally phosphorescence and delayed fluorescence spectra as well as phosphorescence lifetimes and delayed fluorescence lifetimes were measured and their quantum yields of intersystem-crossing, intrinsic triplet-based phosphorescence quantum yields, T{sub 1}-S{sub 0} radiative lifetimes, and S{sub 0}-T{sub 1} absorption strengths were calculated. A method of absolute intrinsic luminescence quantum distribution and quantum yield determination for dye doped films on transparent plates with a fluorimeter is described.

  7. Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

    Science.gov (United States)

    Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

    2018-06-01

    Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

  8. Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films: the role of disorder

    International Nuclear Information System (INIS)

    Orhan, E.; Anicete-Santos, M.; Maurera, M.A.M.A.; Pontes, F.M.; Paiva-Santos, C.O.; Souza, A.G.; Varela, J.A.; Pizani, P.S.; Longo, E.

    2005-01-01

    The nature of intense visible photoluminescence at room temperature of SrWO 4 (SWO) non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The SWO thin films were synthesized by the polymeric precursors method. Their structural properties have been obtained by X-ray diffraction data and the corresponding photoluminescence (PL) spectra have been measured. The UV-vis optical spectra measurements suggest the creation of localized states in the disordered structure. The photoluminescence measurements reveal that the PL changes with the degree of disorder in the SWO thin film. To understand the origin of visible PL at room temperature in disordered SWO, we performed quantum-mechanical calculations on crystalline and disordered SWO periodic models. Their electronic structures are analyzed in terms of DOS, band dispersion and charge densities. We used DFT method with the hybrid non-local B3LYP approximation. The polarization induced by the symmetry break and the existence of localized levels favors the creation of trapped holes and electrons, giving origin to the room temperature photoluminescence phenomenon in the SWO thin films

  9. Characterization of interfaces in semimagnetic quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Schmitt, G.; Kuhn-Heinrich, B.; Zehnder, U.; Ossau, W.; Litz, T.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    The interfaces between nonmagnetic CdTe quantum wells and semimagnetic barriers of Cd{sub 1-x}Mn{sub x}Te were investigated for several well widths by low temperature photoluminescence and photoluminescence excitation spectroscopy. Specially designed Cd{sub 1-x}Mn{sub x}/CdTe/Cd{sub 1-y} Mg{sub y}Te structures enable us to distinguish the quality of semimagnetic normal and inverted interfaces. The normal interface shows to better structural quality than the inverted interface. (author). 5 refs, 2 figs, 1 tab.

  10. Quantum Erasure: Quantum Interference Revisited

    OpenAIRE

    Walborn, Stephen P.; Cunha, Marcelo O. Terra; Pádua, Sebastião; Monken, Carlos H.

    2005-01-01

    Recent experiments in quantum optics have shed light on the foundations of quantum physics. Quantum erasers - modified quantum interference experiments - show that quantum entanglement is responsible for the complementarity principle.

  11. Absolute entropy of ions in methanol

    International Nuclear Information System (INIS)

    Abakshin, V.A.; Kobenin, V.A.; Krestov, G.A.

    1978-01-01

    By measuring the initial thermoelectromotive forces of chains with bromo-silver electrodes in tetraalkylammonium bromide solutions the absolute entropy of bromide-ion in methanol is determined in the 298.15-318.15 K range. The anti Ssub(Brsup(-))sup(0) = 9.8 entropy units value is used for calculation of the absolute partial molar entropy of alkali metal ions and halogenide ions. It has been found that, absolute entropy of Cs + =12.0 entropy units, I - =14.0 entropy units. The obtained ion absolute entropies in methanol at 298.15 K within 1-2 entropy units is in an agreement with published data

  12. Near threshold absolute TDCS: First results

    International Nuclear Information System (INIS)

    Roesel, T.; Schlemmer, P.; Roeder, J.; Frost, L.; Jung, K.; Ehrhardt, H.

    1992-01-01

    A new method, and first results for an impact energy 2 eV above the threshold of ionisation of helium, are presented for the measurement of absolute triple differential cross sections (TDCS) in a crossed beam experiment. The method is based upon measurement of beam/target overlap densities using known absolute total ionisation cross sections and of detection efficiencies using known absolute double differential cross sections (DDCS). For the present work the necessary absolute DDCS for 1 eV electrons had also to be measured. Results are presented for several different coplanar kinematics and are compared with recent DWBA calculations. (orig.)

  13. InAs quantum wires on InP substrate for VCSEL applications

    OpenAIRE

    Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

    2008-01-01

    International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

  14. Synthesis, characterization and photoluminescence properties of ...

    Indian Academy of Sciences (India)

    G Prabhavathi

    carbon nanomaterials reported to date contain only unsubstituted ... 2.1 Materials and characterization. Pyrrole ... trum (FTIR) was taken using the KBr pellet method on a Thermo ..... and quantum yield measurement procedure are available at.

  15. Influence of structural defects on excitonic photoluminescence of pentacene

    International Nuclear Information System (INIS)

    Piryatins'kij, Yu.P.; Kurik, M.V.

    2011-01-01

    The exciton reflection, absorption, and photoluminescence spectra for single crystals and polycrystalline films have been studied in the temperature range of 4.2-296 K. A significant influence of structural defects arising during phase transitions on the exciton spectra of pentacene has been detected. The mechanisms of photoluminescence in single crystals and crystalline films of pentacene have been considered.

  16. (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires

    DEFF Research Database (Denmark)

    Gislason, Hannes; Sørensen, Claus Birger; Hvam, Jørn Märcher

    1996-01-01

    High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved...... edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate...

  17. Introducing the Mean Absolute Deviation "Effect" Size

    Science.gov (United States)

    Gorard, Stephen

    2015-01-01

    This paper revisits the use of effect sizes in the analysis of experimental and similar results, and reminds readers of the relative advantages of the mean absolute deviation as a measure of variation, as opposed to the more complex standard deviation. The mean absolute deviation is easier to use and understand, and more tolerant of extreme…

  18. Investigating Absolute Value: A Real World Application

    Science.gov (United States)

    Kidd, Margaret; Pagni, David

    2009-01-01

    Making connections between various representations is important in mathematics. In this article, the authors discuss the numeric, algebraic, and graphical representations of sums of absolute values of linear functions. The initial explanations are accessible to all students who have experience graphing and who understand that absolute value simply…

  19. Theoretical and experimental study of disordered Ba0.45Sr0.55 TiO3 photoluminescence at room temperature

    International Nuclear Information System (INIS)

    Souza, I.A.; Gurgel, M.F.C.; Santos, L.P.S.; Goes, M.S.; Cava, S.; Cilense, M.; Rosa, I.L.V.; Paiva-Santos, C.O.; Longo, E.

    2006-01-01

    Disordered and crystalline Ba 0.45 Sr 0.55 TiO 3 (BST) powder processed at low temperature was synthesized by the polymeric precursor method. The single-phase perovskite structure of the ceramics was identified by the Raman and X-ray diffraction techniques. Photoluminescence at room temperature was observed only in a disordered BST sample. Increasing the calcination time intensified the photoluminescence (PL), which reached its maximum value in the sample heat treated at 300 deg. C for 30 h. This emission may be correlated with the structural disorder. Periodic ab initio quantum-mechanical calculations using the CRYSTAL98 program can yield important information regarding the electronic and structural properties of crystalline and disordered solids. The experimental and theoretical results indicate the presence of intermediary energy levels in the band gap. This is ascribed to the break in symmetry, which is responsible for visible photoluminescence in the material's disordered state at room temperature

  20. The role of structural order-disorder for visible intense photoluminescence in the BaZr0.5Ti0.5O3 thin films

    International Nuclear Information System (INIS)

    Anicete-Santos, M.; Cavalcante, L.S.; Orhan, E.; Paris, E.C.; Simoes, L.G.P.; Joya, M.R.; Rosa, I.L.V.; Lucena, P.R. de; Santos, M.R.M.C.; Santos-Junior, L.S.; Pizani, P.S.; Leite, E.R.; Varela, J.A.; Longo, E.

    2005-01-01

    The nature of the intense visible room temperature photoluminescence of BaZr 0.5 Ti 0.5 O 3 non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The photoluminescence measurements reveal that the emission intensity changes with the degree of disorder in the BaZr 0.5 Ti 0.5 O 3 lattice. First principles quantum mechanical techniques, based on density functional theory at B3LYP level, have been employed to study the electronic structure of a crystalline model and of structurally disordered models in order to detect the influence of disorder on the electronic structure. An analysis of the electronic charge distribution reveals local polarization in the disordered structures. The relevance of the present theoretical and experimental results on the photoluminescence behavior of BZT is discussed

  1. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  2. Modelling absorption and photoluminescence of TPD

    Energy Technology Data Exchange (ETDEWEB)

    Vragovic, Igor [Dpto. de Fisica Aplicada and Inst. Universitario de Materiales de Alicante, Universidad de Alicante, E-03080 Alicante (Spain)], E-mail: igor.vragovic@ua.es; Calzado, Eva M.; Diaz Garcia, Maria A.; Himcinschi, C. [Max-Planck-Institut fuer Mikrostrukturphysik, D-06120 Halle (Germany); Gisslen, L.; Scholz, R. [Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany)

    2008-05-15

    We analyse the optical spectra of N,N{sup '}-diphenyl-N,N{sup '}-bis(3-methyl-phenyl)-(1,1{sup '}-biphenyl)-4,4{sup '}-diamine (TPD) doped polystyrene films. The aim of the present paper is to give a microscopic interpretation of the significant Stokes shift between absorption and photoluminescence, which makes this material suitable for stimulated emission. The optimized geometric structures and energies of a neutral TPD monomer in ground and excited states are obtained by ab initio calculations using Hartree-Fock and density functional theory. The results indicate that the second distinct peak observed in absorption may arise either from a group of higher electronic transitions of the monomer or from the lowest optical transitions of a TPD dimer.

  3. Modelling absorption and photoluminescence of TPD

    International Nuclear Information System (INIS)

    Vragovic, Igor; Calzado, Eva M.; Diaz Garcia, Maria A.; Himcinschi, C.; Gisslen, L.; Scholz, R.

    2008-01-01

    We analyse the optical spectra of N,N ' -diphenyl-N,N ' -bis(3-methyl-phenyl)-(1,1 ' -biphenyl)-4,4 ' -diamine (TPD) doped polystyrene films. The aim of the present paper is to give a microscopic interpretation of the significant Stokes shift between absorption and photoluminescence, which makes this material suitable for stimulated emission. The optimized geometric structures and energies of a neutral TPD monomer in ground and excited states are obtained by ab initio calculations using Hartree-Fock and density functional theory. The results indicate that the second distinct peak observed in absorption may arise either from a group of higher electronic transitions of the monomer or from the lowest optical transitions of a TPD dimer

  4. Modeling of photoluminescence in laser-based lighting systems

    Science.gov (United States)

    Chatzizyrli, Elisavet; Tinne, Nadine; Lachmayer, Roland; Neumann, Jörg; Kracht, Dietmar

    2017-12-01

    The development of laser-based lighting systems has been the latest step towards a revolution in illumination technology brought about by solid-state lighting. Laser-activated remote phosphor systems produce white light sources with significantly higher luminance than LEDs. The weak point of such systems is often considered to be the conversion element. The high-intensity exciting laser beam in combination with the limited thermal conductivity of ceramic phosphor materials leads to thermal quenching, the phenomenon in which the emission efficiency decreases as temperature rises. For this reason, the aim of the presented study is the modeling of remote phosphor systems in order to investigate their thermal limitations and to calculate the parameters for optimizing the efficiency of such systems. The common approach to simulate remote phosphor systems utilizes a combination of different tools such as ray tracing algorithms and wave optics tools for describing the incident and converted light, whereas the modeling of the conversion process itself, i.e. photoluminescence, in most cases is circumvented by using the absorption and emission spectra of the phosphor material. In this study, we describe the processes involved in luminescence quantum-mechanically using the single-configurational-coordinate diagram as well as the Franck-Condon principle and propose a simulation model that incorporates the temperature dependence of these processes. Following an increasing awareness of climate change and environmental issues, the development of ecologically friendly lighting systems featuring low power consumption and high luminous efficiency is imperative more than ever. The better understanding of laser-based lighting systems is an important step towards that aim as they may improve on LEDs in the near future.

  5. Combined experimental and theoretical investigations of the photoluminescent behavior of Ba(Ti, Zr)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Gurgel, M.F.C.; Paris, E.C.; Simoes, A.Z.; Joya, M.R.; Varela, J.A.; Pizani, P.S.; Longo, E.

    2007-01-01

    The correlation between experimental data and theoretical calculations have been investigated to explain the photoluminescence at room temperature of Ba(Ti 0.75 Zr 0.25 )O 3 (BTZ) thin films prepared by the polymeric precursor method. The degree of structural order-disorder was investigated by X-ray diffraction, Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy and photoluminescence (PL) measurements. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and deformed asymmetric models. The electronic properties are analyzed and the relevance of the present theoretical and experimental results on the PL behavior is discussed. The presence of localized electronic levels and a charge gradient in the band gap due to a break in symmetry, are responsible for the PL in disordered BTZ lattice

  6. Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

    International Nuclear Information System (INIS)

    Lu Liu; Xu Xiaoliang; Shi Chaoshu; Ming Hai

    2010-01-01

    Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200 o C∼350 o C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to its larger size, hot spots and multiple dipole resonance modes coupling, which are induced by aggregation effect.

  7. A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

    Science.gov (United States)

    Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

    2018-03-01

    A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

  8. Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

    Science.gov (United States)

    2013-01-01

    Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

  9. Hydrothermal synthesis, crystal structures and photoluminescence properties of mixed europium–yttrium organic frameworks

    International Nuclear Information System (INIS)

    Han Yinfeng; Fu Lianshe; Mafra, Luís; Shi, Fa-Nian

    2012-01-01

    Three mixed europium–yttrium organic frameworks: Eu 2−x Y x (Mel)(H 2 O) 6 (Mel=mellitic acid or benzene-1,2,3,4,5,6-hexacarboxylic acid, x=0.38 1, 0.74 2, and 0.86 3) have been synthesized and characterized. All the compounds contain a 3-D net with (4, 8)-flu topology. The study indicates that the photoluminescence properties are effectively affected by the different ratios of europium and yttrium ions, the quantum efficiency is increased and the Eu 3+ lifetime becomes longer in these MOFs than those of the Eu analog. - Graphical abstract: Three mixed europium and yttrium organic frameworks: Eu 2−x Y x (Mel)(H 2 O) 6 (Mel=mellitic acid) have been synthesized and characterized. All the compounds contain a 3-D net with (4, 8)-flu topology. The study indicates that the photoluminescence properties are effectively affected by the different ratios of europium and yttrium ions, the quantum efficiency is increased and the Eu 3+ lifetime becomes longer in these MOFs than those of the Eu analog. Highlights: ► Three (4, 8)-flu topological mixed Eu and Y MOFs were synthesized under mild conditions. ► Metal ratios were refined by the single crystal data consistent with the EDS analysis. ► Mixed Eu and Y MOFs show longer lifetime and higher quantum efficiency than the Eu analog. ► Adding inert lanthanide into luminescent MOFs enlarges the field of luminescent MOFs.

  10. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

    DEFF Research Database (Denmark)

    Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

    2009-01-01

    The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...

  11. Conductive properties of switchable photoluminescence thermosetting systems based on liquid crystals.

    Science.gov (United States)

    Tercjak, Agnieszka; Gutierrez, Junkal; Ocando, Connie; Mondragon, Iñaki

    2010-03-16

    Conductive properties of different thermosetting materials modified with nematic 4'-(hexyl)-4-biphenyl-carbonitrile (HBC) liquid crystal and rutile TiO(2) nanoparticles were successfully studied by means of tunneling atomic force miscroscopy (TUNA). Taking into account the liquid crystal state of the HBC at room temperature, depending on both the HBC content and the presence of TiO(2) nanoparticles, designed materials showed different TUNA currents passed through the sample. The addition of TiO(2) nanoparticles into the systems multiply the detected current if compared to the thermosetting systems without TiO(2) nanoparticles and simultaneously stabilized the current passed through the sample, making the process reversible since the absolute current values were almost the same applying both negative and positive voltage. Moreover, thermosetting systems modified with liquid crystals with and without TiO(2) nanoparticles are photoluminescence switchable materials as a function of temperature gradient during repeatable heating/cooling cycle. Conductive properties of switchable photoluminescence thermosetting systems based on liquid crystals can allow them to find potential application in the field of photoresponsive devices, with a high contrast ratio between transparent and opaque states.

  12. A global algorithm for estimating Absolute Salinity

    Science.gov (United States)

    McDougall, T. J.; Jackett, D. R.; Millero, F. J.; Pawlowicz, R.; Barker, P. M.

    2012-12-01

    The International Thermodynamic Equation of Seawater - 2010 has defined the thermodynamic properties of seawater in terms of a new salinity variable, Absolute Salinity, which takes into account the spatial variation of the composition of seawater. Absolute Salinity more accurately reflects the effects of the dissolved material in seawater on the thermodynamic properties (particularly density) than does Practical Salinity. When a seawater sample has standard composition (i.e. the ratios of the constituents of sea salt are the same as those of surface water of the North Atlantic), Practical Salinity can be used to accurately evaluate the thermodynamic properties of seawater. When seawater is not of standard composition, Practical Salinity alone is not sufficient and the Absolute Salinity Anomaly needs to be estimated; this anomaly is as large as 0.025 g kg-1 in the northernmost North Pacific. Here we provide an algorithm for estimating Absolute Salinity Anomaly for any location (x, y, p) in the world ocean. To develop this algorithm, we used the Absolute Salinity Anomaly that is found by comparing the density calculated from Practical Salinity to the density measured in the laboratory. These estimates of Absolute Salinity Anomaly however are limited to the number of available observations (namely 811). In order to provide a practical method that can be used at any location in the world ocean, we take advantage of approximate relationships between Absolute Salinity Anomaly and silicate concentrations (which are available globally).

  13. Quantum optics

    National Research Council Canada - National Science Library

    Agarwal, G. S

    2013-01-01

    ..., quantum metrology, spin squeezing, control of decoherence and many other key topics. Readers are guided through the principles of quantum optics and their uses in a wide variety of areas including quantum information science and quantum mechanics...

  14. Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application

    NARCIS (Netherlands)

    Chen, Junsheng; Liu, Dongzhou; Al-Marri, Mohammed J.; Nuuttila, Lauri; Lehtivuori, Heli; Zheng, Kaibo

    Due to their superior photoluminescence (PL) quantum yield (QY) and tunable optical band gap, all-inorganic CsPbBr3 perovskite quantum dots (QDs) have attracted intensive attention for the application in solar cells, light emitting diodes (LED), photodetectors and laser devices. In this scenario,

  15. Determination of anisotropic dipole moments in self-assembled quantum dots using Rabi oscillations

    OpenAIRE

    Muller, A.; Wang, Q. Q.; Bianucci, P.; Xue, Q. K.; Shih, C. K.

    2004-01-01

    By investigating the polarization-dependent Rabi oscillations using photoluminescence spectroscopy, we determined the respective transition dipole moments of the two excited excitonic states |Ex> and |Ey> of a single self-assembled quantum dot that are nondegenerate due to shape anisotropy. We find that the ratio of the two dipole moments is close to the physical elongation ratio of the quantum dot.

  16. InP quantum dots embedded in GaP: Optical properties and carrier dynamics

    International Nuclear Information System (INIS)

    Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

    2003-01-01

    The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

  17. Quantum Dots and Their Multimodal Applications: A Review

    Directory of Open Access Journals (Sweden)

    Paul H. Holloway

    2010-03-01

    Full Text Available Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence or electric field (electroluminescence. In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

  18. Evidence for possible quantum dot interdiffusion induced by cap layer growth

    International Nuclear Information System (INIS)

    Jasinski, J.; Czeczott, M.; Gladysz, A.; Babinski, A.; Kozubowski, J.

    1999-01-01

    Self-organised InGaAs quantum dots were grown on (001) GaAs substrates and covered with two different types of cap layers grown at significantly different temperatures. In order to determine quantum dot emission energy and dot size distribution, photoluminescence and transmission electron microscopy studies were carried out on such samples. Simple theoretical model neglecting effect of interdiffusion allowed for correlation between quantum dot size and photoluminescence emission energy only in the case of dots covered by cap layers grown at the lower temperature. For dots covered by layers grown at the higher temperature such correlation was possible only when strong interdiffusion was assumed. (author)

  19. Quantum Electrodynamics with Semiconductor Quantum Dots Coupled to Anderson‐localized Random Cavities

    DEFF Research Database (Denmark)

    Sapienza, Luca; Nielsen, Henri Thyrrestrup; Stobbe, Søren

    2011-01-01

    of the spontaneous emission decay rate by up to a factor 15 and an efficiency of channeling single photons into Anderson-localized modes reaching values as high as 94%. These results prove that disordered photonic media provide an efficient platform for quantum electrodynamics, offering a novel route to quantum......We demonstrate that the spontaneous emission decay rate of semiconductor quantum dots can be strongly modified by the coupling to disorder-induced Anderson-localized photonic modes. We experimentally measure, by means of time-resolved photoluminescence spectroscopy, the enhancement...

  20. Does time exist in quantum gravity?

    Directory of Open Access Journals (Sweden)

    Claus Kiefer

    2015-12-01

    Full Text Available Time is absolute in standard quantum theory and dynamical in general relativity. The combination of both theories into a theory of quantum gravity leads therefore to a “problem of time”. In my essay, I investigate those consequences for the concept of time that may be drawn without a detailed knowledge of quantum gravity. The only assumptions are the experimentally supported universality of the linear structure of quantum theory and the recovery of general relativity in the classical limit. Among the consequences are the fundamental timelessness of quantum gravity, the approximate nature of a semiclassical time, and the correlation of entropy with the size of the Universe.

  1. Carrier transfer and magneto-transport in single modulation-doped V-grooved quantum wire modified by ion implantation

    International Nuclear Information System (INIS)

    Huang, S.H.; Chen Zhanghai; Wang, F.Z.; Shen, S.C.; Tan, H.H.; Fu, L.; Fraser, M.; Jagadish, C.

    2006-01-01

    A single Al 0.5 Ga 0.5 As/GaAs V-grooved quantum wire modified by selective ion implantation and rapid thermal annealing was investigated by using spatially resolved micro-photoluminescence spectroscopy and magneto-resistance measurements. The results of spatially resolved photoluminescence indicate that the ion-implantation-induced quantum well intermixing significantly raises the electronic sub-band energies in the side quantum wells (SQWs) and vertical quantum wells, and a more efficient accumulation of electrons in the quantum wires is achieved. Processes of real space carrier transfer from the SQW to the quantum wire was experimentally observed, and showed the blocking effect of carrier transfer due to the existence of the necking quantum well region. Furthermore, magneto-transport investigation on the ion-implanted quantum wire samples shows the quasi-one-dimensional intrinsic motion of electrons, which is important for the design and the optimization of one-dimensional electronic devices

  2. Quantum Instantons and Quantum Chaos

    OpenAIRE

    Jirari, H.; Kröger, H.; Luo, X. Q.; Moriarty, K. J. M.; Rubin, S. G.

    1999-01-01

    Based on a closed form expression for the path integral of quantum transition amplitudes, we suggest rigorous definitions of both, quantum instantons and quantum chaos. As an example we compute the quantum instanton of the double well potential.

  3. The absolute environmental performance of buildings

    DEFF Research Database (Denmark)

    Brejnrod, Kathrine Nykjær; Kalbar, Pradip; Petersen, Steffen

    2017-01-01

    Our paper presents a novel approach for absolute sustainability assessment of a building's environmental performance. It is demonstrated how the absolute sustainable share of the earth carrying capacity of a specific building type can be estimated using carrying capacity based normalization factors....... A building is considered absolute sustainable if its annual environmental burden is less than its share of the earth environmental carrying capacity. Two case buildings – a standard house and an upcycled single-family house located in Denmark – were assessed according to this approach and both were found...... to exceed the target values of three (almost four) of the eleven impact categories included in the study. The worst-case excess was for the case building, representing prevalent Danish building practices, which utilized 1563% of the Climate Change carrying capacity. Four paths to reach absolute...

  4. Absolute calibration technique for spontaneous fission sources

    International Nuclear Information System (INIS)

    Zucker, M.S.; Karpf, E.

    1984-01-01

    An absolute calibration technique for a spontaneously fissioning nuclide (which involves no arbitrary parameters) allows unique determination of the detector efficiency for that nuclide, hence of the fission source strength

  5. MEAN OF MEDIAN ABSOLUTE DERIVATION TECHNIQUE MEAN ...

    African Journals Online (AJOL)

    eobe

    development of mean of median absolute derivation technique based on the based on the based on .... of noise mean to estimate the speckle noise variance. Noise mean property ..... Foraging Optimization,” International Journal of. Advanced ...

  6. Spectroscopy of Charged Quantum Dot Molecules

    Science.gov (United States)

    Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

    2006-03-01

    Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

  7. Quantum metrology

    International Nuclear Information System (INIS)

    Xiang Guo-Yong; Guo Guang-Can

    2013-01-01

    The statistical error is ineluctable in any measurement. Quantum techniques, especially with the development of quantum information, can help us squeeze the statistical error and enhance the precision of measurement. In a quantum system, there are some quantum parameters, such as the quantum state, quantum operator, and quantum dimension, which have no classical counterparts. So quantum metrology deals with not only the traditional parameters, but also the quantum parameters. Quantum metrology includes two important parts: measuring the physical parameters with a precision beating the classical physics limit and measuring the quantum parameters precisely. In this review, we will introduce how quantum characters (e.g., squeezed state and quantum entanglement) yield a higher precision, what the research areas are scientists most interesting in, and what the development status of quantum metrology and its perspectives are. (topical review - quantum information)

  8. Core–shell quantum dots: Properties and applications

    Energy Technology Data Exchange (ETDEWEB)

    Vasudevan, D., E-mail: vasudevand@rediffmail.com [Electrodics and electrocatalysis division, CSIR-CECRI, Karaikudi 630006 (India); Gaddam, Rohit Ranganathan [Amity Institute of Nanotechnology, Amity University, Noida 201301 (India); Trinchi, Adrian; Cole, Ivan [CSIRO Materials Science and Engineering, Clayton South MDC, 3169 (Australia)

    2015-07-05

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.

  9. Core–shell quantum dots: Properties and applications

    International Nuclear Information System (INIS)

    Vasudevan, D.; Gaddam, Rohit Ranganathan; Trinchi, Adrian; Cole, Ivan

    2015-01-01

    Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core–shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis

  10. Absolute spectrophotometry of Nova Cygni 1975

    International Nuclear Information System (INIS)

    Kontizas, E.; Kontizas, M.; Smyth, M.J.

    1976-01-01

    Radiometric photoelectric spectrophotometry of Nova Cygni 1975 was carried out on 1975 August 31, September 2, 3. α Lyr was used as reference star and its absolute spectral energy distribution was used to reduce the spectrophotometry of the nova to absolute units. Emission strengths of Hα, Hβ, Hγ (in W cm -2 ) were derived. The Balmer decrement Hα:Hβ:Hγ was compared with theory, and found to deviate less than had been reported for an earlier nova. (author)

  11. A three-axis SQUID-based absolute vector magnetometer

    Energy Technology Data Exchange (ETDEWEB)

    Schönau, T.; Schmelz, M.; Stolz, R.; Anders, S.; Linzen, S.; Meyer, H.-G. [Department of Quantum Detection, Leibniz Institute of Photonic Technology, Jena 07745 (Germany); Zakosarenko, V.; Meyer, M. [Supracon AG, An der Lehmgrube 11, Jena 07751 (Germany)

    2015-10-15

    We report on the development of a three-axis absolute vector magnetometer suited for mobile operation in the Earth’s magnetic field. It is based on low critical temperature dc superconducting quantum interference devices (LTS dc SQUIDs) with sub-micrometer sized cross-type Josephson junctions and exhibits a white noise level of about 10 fT/Hz{sup 1/2}. The width of superconducting strip lines is restricted to less than 6 μm in order to avoid flux trapping during cool-down in magnetically unshielded environment. The long-term stability of the flux-to-voltage transfer coefficients of the SQUID electronics is investigated in detail and a method is presented to significantly increase their reproducibility. We further demonstrate the long-term operation of the setup in a magnetic field varying by about 200 μT amplitude without the need for recalibration.

  12. Quantum Distinction: Quantum Distinctiones!

    OpenAIRE

    Zeps, Dainis

    2009-01-01

    10 pages; How many distinctions, in Latin, quantum distinctiones. We suggest approach of anthropic principle based on anthropic reference system which should be applied equally both in theoretical physics and in mathematics. We come to principle that within reference system of life subject of mathematics (that of thinking) should be equated with subject of physics (that of nature). For this reason we enter notions of series of distinctions, quantum distinction, and argue that quantum distinct...

  13. Photoluminescence of self-organized perylene bisimide polymers

    NARCIS (Netherlands)

    Neuteboom, E.E.; Meskers, S.C.J.; Meijer, E.W.; Janssen, R.A.J.

    2004-01-01

    Three polymers consisting of alternating perylene bisimide chromophores and flexible polytetrahydrofuran segments of different length have been studied using absorption and (time-resolved) photoluminescence spectroscopy. In o-dichlorobenzene, the chromophores self organize to form H-like aggregates.

  14. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.; Kelarakis, Antonios; Giannelis, Emmanuel P.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives

  15. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

    International Nuclear Information System (INIS)

    Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

    2012-01-01

    We report on the effect of post-growth thermal annealing of [011]-, [01 1-bar ]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots. (paper)

  16. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives rise to the formation of well-defined nanoparticles. The carbogenic nanoparticles can be readily surface modified, generating a series of highly selective photoluminescent materials that exhibit remarkable stability upon prolonged exposure to aggressive, high-temperature, high-salinity environment. © 2012 The Royal Society of Chemistry.

  17. Photoluminescence of carbon dots from mesoporous silica

    Science.gov (United States)

    Nelson, D. K.; Razbirin, B. S.; Starukhin, A. N.; Eurov, D. A.; Kurdyukov, D. A.; Stovpiaga, E. Yu; Golubev, V. G.

    2016-09-01

    Photophysical properties of carbon dots were investigated under various excitation conditions and over a wide temperature region - from room to liquid helium temperatures. The carbon dots (CDs) were synthesized using mesoporous silica particles as a reactor and (3-aminopropyl)triethoxysilane (APTES) as a precursor. The photoluminescence spectra of CDs exhibit a strong dependence on the excitation wavelength and demonstrate a significant inhomogeneous broadening. Lowering sample temperature reveals the doublet structure of the spectra, which is associated with the vibronic structure of radiative transitions. The vibration energy ∼1200 cm-1 is close to the energy of Csbnd O stretching vibration. Long-lived phosphorescence of carbon dots with its decay time ∼0.2 s at T = 80 K was observed. The fluorescence and phosphorescence spectra are shown to be spectrally separated. The long-lived component of the emission was ascribed to optically forbidden triplet-singlet transitions. The value of the singlet-triplet splitting was found to be about 0.3 eV. Photo-induced polarization of the luminescence of carbon dots was revealed. The degree of the linear polarization is dependent on the wavelengths of both excitation and emitted light. The effect indicates a hidden anisotropy of optical dipole transitions in the dots and demonstrates the loss of the dipole orientation during the electron energy relaxation.

  18. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  19. Theory of Spin States of Quantum Dot Molecules

    Science.gov (United States)

    Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

    2007-04-01

    The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

  20. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    International Nuclear Information System (INIS)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author)

  1. Optically detected SdH oscillations in CdTe/(CdMg)Te and CdTe/(CdMnMg)Te modulation doped quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Shen, J.X.; Ossau, W.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalisches Institut der Uniwersitaet Wuerzburg, Wuerzburg (Germany)

    1995-12-31

    Oscillations of photoluminescence properties in external magnetic fields are investigated in CdTe modulation doped quantum wells. The oscillatory behaviour of the luminescence intensity, the line width and the g factor is due to many-body effects in the 2-dimensional electron gas. The oscillation of photoluminescence intensity can be easily used as optically detected Shubnikov de Haas effect to determine the electron concentration in quantum wells without contacts. (author). 5 refs, 3 figs, 1 tab.

  2. Colloidal quantum dot photovoltaics: The effect of polydispersity

    KAUST Repository

    Zhitomirsky, David; Kramer, Illan J.; Labelle, André J.; Fischer, Armin H.; Debnath, Ratan K.; Pan, Jun; Bakr, Osman; Sargent, E. H.

    2012-01-01

    , the dependence of both open-circuit voltage and photoluminescence behavior on the density of small-bandgap (large-diameter) quantum dot inclusions. The model requires inclusion of trap states to explain the experimental data quantitatively. We then explore using

  3. Investigation of the photoluminescence properties of thermochemically synthesized CdS nanocrystals

    Directory of Open Access Journals (Sweden)

    M. Molaei

    2011-03-01

    Full Text Available In this work we have synthesized CdS nanocrystals with thermochemical method. CdSO4 and Na2S2O3 were used as the precursors and thioglycolic acid (TGA was used as capping agent molecule. The structure and optical property of the nanocrystals were characterized by means of XRD, TEM, UV-visible optical spectroscopy and photoluminescence (PL. X-ray diffraction (XRD and TEM analyses demonstrated hexagonal phase CdS nanocrystals with an average size around 2 nm. Synthesized nanocrystals exhibited band gap of about 3.2 eV and showed a broad band emission from 400-750 nm centered at 504 nm with a (0.27, 0.39 CIE coordinate. This emission can be attributed to recombination of an electron in conduction band with a hole trapped in Cd vacancies near to the valance band of CdS. The best attained photoluminescence quantum yield of the nanocrystals was about 12%, this amount is about 20 times higher than that for thioglycerol (TG capped CdS nanocrystals.

  4. Facile synthesis of S, N co-doped carbon dots and investigation of their photoluminescence properties.

    Science.gov (United States)

    Zhang, Yue; He, Junhui

    2015-08-21

    A facile one-pot approach to prepare photoluminescent carbon dots (CDs) was developed through hydrothermal treatment of cysteine and citric acid. The obtained CDs show stable and bright blue emission with a quantum yield of 54% and an average lifetime of 11.61 ns. Moreover, the two-photon induced upconversion fluorescence of the CDs was observed and demonstrated. Interestingly, both down and up conversion fluorescence of the CDs show excitation-independent emission, which is quite different from most of the previously reported CDs. Ultrafast spectroscopy was also employed here to study the photoluminescence (PL) properties of the CDs. After characterization using various spectroscopic techniques, a unique PL mechanism for the as-prepared CDs' fluorescence was proposed accordingly. In addition, the influence of various metal ions on the CD fluorescence was examined and no quenching phenomena were observed. Meanwhile, gold nanoparticles (Au NPs) were found to be good quenchers of CD fluorescence and their quenching behavior was fitted to the Stern-Volmer equation. This provides new opportunities for fluorescence sensor designs and light energy conversion applications. Finally, the as-prepared CDs were inkjet-printed to form a desirable pattern, which is useful for fluorescent patterns, and anti-counterfeiting labeling.

  5. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

    2013-01-01

    Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

  6. Facile synthetic method for pristine graphene quantum dots and graphene oxide quantum dots: origin of blue and green luminescence.

    Science.gov (United States)

    Liu, Fei; Jang, Min-Ho; Ha, Hyun Dong; Kim, Je-Hyung; Cho, Yong-Hoon; Seo, Tae Seok

    2013-07-19

    Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

    Science.gov (United States)

    Rosales, Daniel; Gil, B.; Bretagnon, T.; Zhang, F.; Okur, S.; Monavarian, M.; Izioumskaia, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

    2014-03-01

    The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K-300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations.

  8. Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

    Science.gov (United States)

    Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

    2016-05-01

    We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

  9. Time-resolved ultraviolet near-field scanning optical microscope for characterizing photoluminescence lifetime of light-emitting devices.

    Science.gov (United States)

    Park, Kyoung-Duck; Jeong, Hyun; Kim, Yong Hwan; Yim, Sang-Youp; Lee, Hong Seok; Suh, Eun-Kyung; Jeong, Mun Seok

    2013-03-01

    We developed a instrument consisting of an ultraviolet (UV) near-field scanning optical microscope (NSOM) combined with time-correlated single photon counting, which allows efficient observation of temporal dynamics of near-field photoluminescence (PL) down to the sub-wavelength scale. The developed time-resolved UV NSOM system showed a spatial resolution of 110 nm and a temporal resolution of 130 ps in the optical signal. The proposed microscope system was successfully demonstrated by characterizing the near-field PL lifetime of InGaN/GaN multiple quantum wells.

  10. A global algorithm for estimating Absolute Salinity

    Directory of Open Access Journals (Sweden)

    T. J. McDougall

    2012-12-01

    Full Text Available The International Thermodynamic Equation of Seawater – 2010 has defined the thermodynamic properties of seawater in terms of a new salinity variable, Absolute Salinity, which takes into account the spatial variation of the composition of seawater. Absolute Salinity more accurately reflects the effects of the dissolved material in seawater on the thermodynamic properties (particularly density than does Practical Salinity.

    When a seawater sample has standard composition (i.e. the ratios of the constituents of sea salt are the same as those of surface water of the North Atlantic, Practical Salinity can be used to accurately evaluate the thermodynamic properties of seawater. When seawater is not of standard composition, Practical Salinity alone is not sufficient and the Absolute Salinity Anomaly needs to be estimated; this anomaly is as large as 0.025 g kg−1 in the northernmost North Pacific. Here we provide an algorithm for estimating Absolute Salinity Anomaly for any location (x, y, p in the world ocean.

    To develop this algorithm, we used the Absolute Salinity Anomaly that is found by comparing the density calculated from Practical Salinity to the density measured in the laboratory. These estimates of Absolute Salinity Anomaly however are limited to the number of available observations (namely 811. In order to provide a practical method that can be used at any location in the world ocean, we take advantage of approximate relationships between Absolute Salinity Anomaly and silicate concentrations (which are available globally.

  11. GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations

    NARCIS (Netherlands)

    Ulloa Herrero, J.M.; Gargallo-Caballero, R.; Bozkurt, M.; Moral, del M.; Guzman, A.; Koenraad, P.M.; Hierro, A.

    2010-01-01

    The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum dots (QDs) are shown to be strongly correlated with structural changes. The observed redshift of the photoluminescence emission is shown to follow two different regimes. In the first regime, with Sb concentrations up

  12. Photoluminescence excitation spectroscopy of SiV- and GeV- color center in diamond

    Science.gov (United States)

    Häußler, Stefan; Thiering, Gergő; Dietrich, Andreas; Waasem, Niklas; Teraji, Tokuyuki; Isoya, Junichi; Iwasaki, Takayuki; Hatano, Mutsuko; Jelezko, Fedor; Gali, Adam; Kubanek, Alexander

    2017-06-01

    Color centers in diamond are important quantum emitters for a broad range of applications ranging from quantum sensing to quantum optics. Understanding the internal energy level structure is of fundamental importance for future applications. We experimentally investigate the level structure of an ensemble of few negatively charged silicon-vacancy (SiV-) and germanium-vacancy (GeV-) centers in bulk diamond at room temperature by photoluminescence (PL) and excitation (PLE) spectroscopy over a broad wavelength range from 460 to 650 {nm} and perform power-dependent saturation measurements. For SiV- our experimental results confirm the presence of a higher energy transition at ˜ 2.31 {eV}. By comparison with detailed theoretical simulations of the imaginary dielectric function we interpret the transition as a dipole-allowed transition from {}2{E}g-state to {}2{A}2u-state where the corresponding a 2u -level lies deeply inside the diamond valence band. Therefore, the transition is broadened by the diamond band. At higher excitation power of 10 {mW} we indicate signs of a parity-conserving transition at ˜ 2.03 {eV} supported by saturation measurements. For GeV- we demonstrate that the PLE spectrum is in good agreement with the mirror image of the PL spectrum of the zero-phonon line. Experimentally we do not observe a higher lying energy level up to a transition wavelength of 460 {nm}. The observed PL spectra are identical, independent of excitation wavelength, suggesting a rapid decay to {}2{E}u excited state and followed by optical transition to {}2{E}g ground state. Our investigations convey important insights for future quantum optics and quantum sensing experiments based on SiV--center and GeV--center in diamond.

  13. Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Liu, Chuan

    2011-01-01

    Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2...... matrix were formed by complementary metal-oxide-semiconductor compatible technology, e.g. plasma enhanced chemical vapour deposition and annealing. Different sizes of the Ge nanocrystals were prepared and analyzed by transmission electron microscopy with respect to their size, distribution...... and crystallization. The samples of different size Ge nanocrystals embedded in the SiO2 matrix were characterized by Raman spectroscopy and photoluminescence. Interplayed size and strain effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect with proper excitation laser...

  14. Photoluminescence enhancement of porous silicon particles by microwave-assisted activation

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Bing [Key Laboratory of Forest Genetics and Biotechnology (Ministry of Education of China), Nanjing Forestry University, Nanjing 210037 (China); Advanced Analysis and Testing Center, Nanjing Forestry University, Nanjing 210037 (China); Zhang, Wenyi; Dong, Chen; Shi, Jisen [Key Laboratory of Forest Genetics and Biotechnology (Ministry of Education of China), Nanjing Forestry University, Nanjing 210037 (China); Bao, Weiyi [Advanced Analysis and Testing Center, Nanjing Forestry University, Nanjing 210037 (China); Zhang, Junfeng [State Key Laboratory of Pharmaceutical Biotechnology, School of Life Sciences, Nanjing University, Nanjing 210093 (China)

    2012-11-15

    Photoluminescence (PL) of porous silicon (PSi) particles can be significantly enhanced in some organic solvents (i.e., ethanol or dimethyl sulfoxide) under microwave irradiation. Fourier transform infrared spectra, dynamic-light-scattering measurements, and scanning electron microscopy had been adopted to explore the mechanism of PL enhancement of PSi particles under microwave irradiation, which is attributed to the formation of higher porosity and the growth of silicon oxide by microwave-assisted wet etching. Compared with that fabricated by ultrasonication, smaller luminescent PSi nanoparticles (average size {proportional_to}60 nm) with stronger orange-red fluorescence (PL quantum yield {proportional_to}14.8%) and higher dispersibility can be large-scale prepared for cellular imaging and drug delivery in biomedical applications. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Effects of precursors on the crystal structure and photoluminescence of CdS nanocrystalline

    International Nuclear Information System (INIS)

    Fu Zuoling; Zhou Shihong; Shi Jinsheng; Zhang Siyuan

    2005-01-01

    A series of cadmium sulfide (CdS) nanocrystalline were synthesized by precipitation from a mixture of aqueous solutions of cadmium salts and sulfur salts without adding any surface-termination agent. Their crystal structures and particle sizes were determined by X-ray diffraction (XRD). The CdS nanocrystalline precipitated from different precursors exhibited three cases: cubic phase, hexagonal phase and a hybrid of cubic and hexagonal phases. The photoluminescence (PL) of cadmium salt precursors and CdS nanocrystalline is also analyzed. Similar spectral band structure of cadmium salt precursors and CdS nanocrystalline is found. The PL of 3.4, 2.4 and 2.0 nm sized CdS nanocrystalline with the same crystal structure indicated quantum confinement effect

  16. An Absolute Phase Space for the Physicality of Matter

    International Nuclear Information System (INIS)

    Valentine, John S.

    2010-01-01

    We define an abstract and absolute phase space (''APS'') for sub-quantum intrinsic wave states, in three axes, each mapping directly to a duality having fundamental ontological basis. Many aspects of quantum physics emerge from the interaction algebra and a model deduced from principles of 'unique solvability' and 'identifiable entity', and we reconstruct previously abstract fundamental principles and phenomena from these new foundations. The physical model defines bosons as virtual continuous waves pairs in the APS, and fermions as real self-quantizing snapshots of those waves when simple conditions are met. The abstraction and physical model define a template for the constitution of all fermions, a template for all the standard fundamental bosons and their local interactions, in a common framework and compactified phase space for all forms of real matter and virtual vacuum energy, and a distinct algebra for observables and unobservables. To illustrate our scheme's potential, we provide examples of slit experiment variations (where the model finds theoretical basis for interference only occurring between two final sources), QCD (where we may model most attributes known to QCD, and a new view on entanglement), and we suggest approaches for other varied applications. We believe this is a viable candidate for further exploration as a foundational proposition for physics.

  17. Absolute isotopic abundances of Ti in meteorites

    International Nuclear Information System (INIS)

    Niederer, F.R.; Papanastassiou, D.A.; Wasserburg, G.J.

    1985-01-01

    The absolute isotope abundance of Ti has been determined in Ca-Al-rich inclusions from the Allende and Leoville meteorites and in samples of whole meteorites. The absolute Ti isotope abundances differ by a significant mass dependent isotope fractionation transformation from the previously reported abundances, which were normalized for fractionation using 46 Ti/ 48 Ti. Therefore, the absolute compositions define distinct nucleosynthetic components from those previously identified or reflect the existence of significant mass dependent isotope fractionation in nature. We provide a general formalism for determining the possible isotope compositions of the exotic Ti from the measured composition, for different values of isotope fractionation in nature and for different mixing ratios of the exotic and normal components. The absolute Ti and Ca isotopic compositions still support the correlation of 50 Ti and 48 Ca effects in the FUN inclusions and imply contributions from neutron-rich equilibrium or quasi-equilibrium nucleosynthesis. The present identification of endemic effects at 46 Ti, for the absolute composition, implies a shortfall of an explosive-oxygen component or reflects significant isotope fractionation. Additional nucleosynthetic components are required by 47 Ti and 49 Ti effects. Components are also defined in which 48 Ti is enhanced. Results are given and discussed. (author)

  18. Relative and absolute level populations in beam-foil--excited neutral helium

    International Nuclear Information System (INIS)

    Davidson, J.

    1975-01-01

    Relative and absolute populations of 19 levels in beam-foil--excited neutral helium at 0.275 MeV have been measured. The singlet angular-momentum sequences show dependences on principal quantum number consistent with n -3 , but the triplet sequences do not. Singlet and triplet angular-momentum sequences show similar dependences on level excitation energy. Excitation functions for six representative levels were measured in the range 0.160 to 0.500 MeV. The absolute level populations increase with energy, whereas the neutral fraction of the beam decreases with energy. Further, the P angular-momentum levels are found to be overpopulated with respect to the S and D levels. The overpopulation decreases with increasing principal quantum number

  19. Relative and absolute level populations in beam-foil-excited neutral helium

    Science.gov (United States)

    Davidson, J.

    1975-01-01

    Relative and absolute populations of 19 levels in beam-foil-excited neutral helium at 0.275 MeV have been measured. The singlet angular-momentum sequences show dependences on principal quantum number consistent with n to the -3rd power, but the triplet sequences do not. Singlet and triplet angular-momentum sequences show similar dependences on level excitation energy. Excitation functions for six representative levels were measured in the range from 0.160 to 0.500 MeV. The absolute level populations increase with energy, whereas the neutral fraction of the beam decreases with energy. Further, the P angular-momentum levels are found to be overpopulated with respect to the S and D levels. The overpopulation decreases with increasing principal quantum number.

  20. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  1. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

    International Nuclear Information System (INIS)

    Bietti, S; Sanguinetti, S; Somaschini, C; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2009-01-01

    We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

  2. Quantum walks, quantum gates, and quantum computers

    International Nuclear Information System (INIS)

    Hines, Andrew P.; Stamp, P. C. E.

    2007-01-01

    The physics of quantum walks on graphs is formulated in Hamiltonian language, both for simple quantum walks and for composite walks, where extra discrete degrees of freedom live at each node of the graph. It is shown how to map between quantum walk Hamiltonians and Hamiltonians for qubit systems and quantum circuits; this is done for both single-excitation and multiexcitation encodings. Specific examples of spin chains, as well as static and dynamic systems of qubits, are mapped to quantum walks, and walks on hyperlattices and hypercubes are mapped to various gate systems. We also show how to map a quantum circuit performing the quantum Fourier transform, the key element of Shor's algorithm, to a quantum walk system doing the same. The results herein are an essential preliminary to a Hamiltonian formulation of quantum walks in which coupling to a dynamic quantum environment is included

  3. Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Netzel, Carsten; Hoffmann, Veit; Wernicke, Tim; Knauer, Arne; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin (Germany); Institut fuer Festkoerperphysik, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2010-07-15

    To determine relevant processes affecting the internal quantum efficiency in GaInN quantum well structures, we have studied the temperature and excitation power dependent photoluminescence intensity for quantum wells with different well widths on (0001) c-plane GaN and for quantum wells on nonpolar (11-20) a-plane GaN. In thick polar quantum wells, the quantum confined Stark effect (QCSE) causes a stronger intensity decrease with increasing temperature as long as the radiative recombination dominates. At higher temperatures, when the nonradiative recombination becomes more important, thick polar quantum wells feature a lower relative intensity decrease than thinner polar or nonpolar quantum wells. Excitation power dependent photoluminescence points to a transition from a recombination of excitons to a bimolecular recombination of uncorrelated charge carriers for thick polar quantum wells in the same temperature range. This transition might contribute to the limitation of nonradiative recombination by a reduced diffusivity of charge carriers. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Absolute calibration in vivo measurement systems

    International Nuclear Information System (INIS)

    Kruchten, D.A.; Hickman, D.P.

    1991-02-01

    Lawrence Livermore National Laboratory (LLNL) is currently investigating a new method for obtaining absolute calibration factors for radiation measurement systems used to measure internally deposited radionuclides in vivo. Absolute calibration of in vivo measurement systems will eliminate the need to generate a series of human surrogate structures (i.e., phantoms) for calibrating in vivo measurement systems. The absolute calibration of in vivo measurement systems utilizes magnetic resonance imaging (MRI) to define physiological structure, size, and composition. The MRI image provides a digitized representation of the physiological structure, which allows for any mathematical distribution of radionuclides within the body. Using Monte Carlo transport codes, the emission spectrum from the body is predicted. The in vivo measurement equipment is calibrated using the Monte Carlo code and adjusting for the intrinsic properties of the detection system. The calibration factors are verified using measurements of existing phantoms and previously obtained measurements of human volunteers. 8 refs

  5. Measurement of the absolute tunneling current density in field emission from tungsten(110)

    International Nuclear Information System (INIS)

    Ehrlich, C.D.; Plummer, E.W.

    1978-01-01

    The phenomenon of quantum-mechanical tunneling of an electron through a barrier in the potential energy has been well established in a variety of experiments. The quantity which is usually measured in these experiments is the rate of change of tunneling current and not the absolute current density. This paper reports on a direct measurement of the tunneling current density, which is found to be in good agreement with free-electron theory for W

  6. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  7. Redetermination and absolute configuration of atalaphylline

    Directory of Open Access Journals (Sweden)

    Hoong-Kun Fun

    2010-02-01

    Full Text Available The title acridone alkaloid [systematic name: 1,3,5-trihydroxy-2,4-bis(3-methylbut-2-enylacridin-9(10H-one], C23H25NO4, has previously been reported as crystallizing in the chiral orthorhombic space group P212121 [Chantrapromma et al. (2010. Acta Cryst. E66, o81–o82] but the absolute configuration could not be determined from data collected with Mo radiation. The absolute configuration has now been determined by refinement of the Flack parameter with data collected using Cu radiation. All features of the molecule and its crystal packing are similar to those previously described.

  8. Academic Training: The World of Quantum Matter

    CERN Multimedia

    Françoise Benz

    2006-01-01

    2005-2006 ACADEMIC TRAINING PROGRAMME LECTURE SERIES 23, 24, 25, 26 January 2006 from 11:00 to 12:00 - Main Auditorium, bldg. 500 The World of Quantum Matter M. WEIDEMUELLER / Albert-Ludwigs-Universität Freiburg In my lecture series, I will present the recent spectacular advances in the field of quantum gases and macroscopic quantum physics. A variety of subjects will be covered including Bose condensates and degenerate Fermi gases, ultracold molecules and chemistry near absolute zero, Rydberg gases, single-atom manipulation, quantum information processing, as well as applications of cold atoms as precision targets. The topics of the lectures are: Physics near absolute zero Bose condensation and Fermi degeneracy Molecules, Rydberg gases and other exotic species Single-atom manipulation, quantum information processing and ultracold atoms as targets in storage rings. ENSEIGNEMENT ACADEMIQUE ACADEMIC TRAINING Françoise Benz 73127 academic.training@cern.ch If you wish to participate in one of the f...

  9. Quantum-well exciton polariton emission from multi-quantum-well wire structures

    Science.gov (United States)

    Kohl, M.; Heitmann, D.; Grambow, P.; Ploog, K.

    The radiative decay of quantum-well exciton (QWE) polaritons in microstructured Al0.3Ga0.7As - GaAs multi-quantum wells (MQW) has been studied by photoluminescence spectroscopy. Periodic wire structures with lateral periodicities a = 250-500 nm and lateral widths t = 100-200 nm have been fabricated by plasma etching. The thickness of the QWs was 13 nm. In the QW wire samples the free-exciton photoluminescence was strongly reduced and the QWE polariton emission was observed as a maximum peaked at a 3 meV higher energy than the free QWE transition. In samples which had only a microstructured cladding layer, the free-exciton photoluminescence was dominant in the spectrum and the QWE polariton emission was observed as a shoulder on the high-energy side of the free QWE transition. In addition, two transitions at the low energy side of the free QWE photoluminescence were present in the microstructured samples, which were related to etching induced states.

  10. Absolutely relative or relatively absolute: violations of value invariance in human decision making.

    Science.gov (United States)

    Teodorescu, Andrei R; Moran, Rani; Usher, Marius

    2016-02-01

    Making decisions based on relative rather than absolute information processing is tied to choice optimality via the accumulation of evidence differences and to canonical neural processing via accumulation of evidence ratios. These theoretical frameworks predict invariance of decision latencies to absolute intensities that maintain differences and ratios, respectively. While information about the absolute values of the choice alternatives is not necessary for choosing the best alternative, it may nevertheless hold valuable information about the context of the decision. To test the sensitivity of human decision making to absolute values, we manipulated the intensities of brightness stimuli pairs while preserving either their differences or their ratios. Although asked to choose the brighter alternative relative to the other, participants responded faster to higher absolute values. Thus, our results provide empirical evidence for human sensitivity to task irrelevant absolute values indicating a hard-wired mechanism that precedes executive control. Computational investigations of several modelling architectures reveal two alternative accounts for this phenomenon, which combine absolute and relative processing. One account involves accumulation of differences with activation dependent processing noise and the other emerges from accumulation of absolute values subject to the temporal dynamics of lateral inhibition. The potential adaptive role of such choice mechanisms is discussed.

  11. Absolute continuity for operator valued completely positive maps on C∗-algebras

    Science.gov (United States)

    Gheondea, Aurelian; Kavruk, Ali Şamil

    2009-02-01

    Motivated by applicability to quantum operations, quantum information, and quantum probability, we investigate the notion of absolute continuity for operator valued completely positive maps on C∗-algebras, previously introduced by Parthasarathy [in Athens Conference on Applied Probability and Time Series Analysis I (Springer-Verlag, Berlin, 1996), pp. 34-54]. We obtain an intrinsic definition of absolute continuity, we show that the Lebesgue decomposition defined by Parthasarathy is the maximal one among all other Lebesgue-type decompositions and that this maximal Lebesgue decomposition does not depend on the jointly dominating completely positive map, we obtain more flexible formulas for calculating the maximal Lebesgue decomposition, and we point out the nonuniqueness of the Lebesgue decomposition as well as a sufficient condition for uniqueness. In addition, we consider Radon-Nikodym derivatives for absolutely continuous completely positive maps that, in general, are unbounded positive self-adjoint operators affiliated to a certain von Neumann algebra, and we obtain a spectral approximation by bounded Radon-Nikodym derivatives. An application to the existence of the infimum of two completely positive maps is indicated, and formulas in terms of Choi's matrices for the Lebesgue decomposition of completely positive maps in matrix algebras are obtained.

  12. Quantum stochastics

    CERN Document Server

    Chang, Mou-Hsiung

    2015-01-01

    The classical probability theory initiated by Kolmogorov and its quantum counterpart, pioneered by von Neumann, were created at about the same time in the 1930s, but development of the quantum theory has trailed far behind. Although highly appealing, the quantum theory has a steep learning curve, requiring tools from both probability and analysis and a facility for combining the two viewpoints. This book is a systematic, self-contained account of the core of quantum probability and quantum stochastic processes for graduate students and researchers. The only assumed background is knowledge of the basic theory of Hilbert spaces, bounded linear operators, and classical Markov processes. From there, the book introduces additional tools from analysis, and then builds the quantum probability framework needed to support applications to quantum control and quantum information and communication. These include quantum noise, quantum stochastic calculus, stochastic quantum differential equations, quantum Markov semigrou...

  13. Proposed Quenching of Phonon-Induced Processes in Photoexcited Quantum Dots due to Electron-Hole Asymmetries

    DEFF Research Database (Denmark)

    Nysteen, Anders; Nielsen, Per Kær; Mørk, Jesper

    2013-01-01

    by photoluminescence excitation spectroscopy of a single quantum dot. We also investigate the implications for cavity QED, i.e., a coupled quantum dot-cavity system, and demonstrate that the phonon scattering may be strongly quenched. The quenching is explained by a balancing between the deformation potential...

  14. Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields

    NARCIS (Netherlands)

    Kleemans, N.A.J.M.; Blokland, J.H.; Taboada, A.G.; Genuchten, van H.C.M.; Bozkurt, M.; Fomin, V.M.; Gladilin, V.N.; Granados, D.; Garcia, J.M.; Christianen, P.C.M.; Maan, J.C.; Devreese, J.T.; Koenraad, P.M.

    2009-01-01

    We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these type I quantum rings along with the Coulomb

  15. Influence of hydrogen peroxide on the stability and optical properties of CdS quantum dots in gelatin

    Energy Technology Data Exchange (ETDEWEB)

    Klyuev, V.G.; Volykhin, D.V., E-mail: volykhin.d@ya.ru; Ivanova, A.A.

    2017-03-15

    Influence of hydrogen peroxide on the stability and optical characteristics of CdS quantum dots obtained by aqueous synthesis in gelatin is investigated. It is shown that the action of hydrogen peroxide on the CdS quantum dots reduces the average particle size, increases monodispersity of particle size distribution, and also increases the photoluminescence intensity. A model that explains the behavior of CdS quantum dots photoluminescence with a decrease of particle size as a result of treatment with hydrogen peroxide is presented.

  16. Photoluminescent properties of complex metal oxide nanopowders for gas sensing

    Science.gov (United States)

    Bovhyra, R. V.; Mudry, S. I.; Popovych, D. I.; Savka, S. S.; Serednytski, A. S.; Venhryn, Yu. I.

    2018-03-01

    This work carried out research on the features of photoluminescence of the mixed and complex metal oxide nanopowders (ZnO/TiO2, ZnO/SnO2, Zn2SiO4) in vacuum and gaseous ambient. The nanopowders were obtained using pulsed laser reactive technology. The synthesized nanoparticles were characterized by X-ray diffractometry, energy-dispersive X-ray analysis, and scanning and transmission electron microscopy analysis for their sizes, shapes and collocation. The influence of gas environment on the photoluminescence intensity was investigated. A change of ambient gas composition leads to a rather significant change in the intensity of the photoluminescence spectrum and its deformation. The most significant changes in the photoluminescent spectrum were observed for mixed ZnO/TiO2 nanopowders. This obviously is the result of a redistribution of existing centers of luminescence and the appearance of new adsorption centers of luminescence on the surface of nanopowders. The investigated nanopowders can be effectively used as sensing materials for the construction of the multi-component photoluminescent sensing matrix.

  17. Effect of gamma irradiation on the photoluminescence of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru; Romanov, N. M. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Goryachev, D. N. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zakharova, I. B. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Sreseli, O. M. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2017-04-15

    The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.

  18. Quantum Computing

    OpenAIRE

    Scarani, Valerio

    1998-01-01

    The aim of this thesis was to explain what quantum computing is. The information for the thesis was gathered from books, scientific publications, and news articles. The analysis of the information revealed that quantum computing can be broken down to three areas: theories behind quantum computing explaining the structure of a quantum computer, known quantum algorithms, and the actual physical realizations of a quantum computer. The thesis reveals that moving from classical memor...

  19. Quantum Malware

    OpenAIRE

    Wu, Lian-Ao; Lidar, Daniel A.

    2005-01-01

    When quantum communication networks proliferate they will likely be subject to a new type of attack: by hackers, virus makers, and other malicious intruders. Here we introduce the concept of "quantum malware" to describe such human-made intrusions. We offer a simple solution for storage of quantum information in a manner which protects quantum networks from quantum malware. This solution involves swapping the quantum information at random times between the network and isolated, distributed an...

  20. Fast neutron radiography using photoluminescent imaging plates

    International Nuclear Information System (INIS)

    Rant, J.; Kristof, E.; Balasko, M.; Stade, J.

    1999-01-01

    Fast neutron radiography (FNR) and resonance neutron radiography (RNR) are complementary to the conventional radiography with high energy gamma-rays or brems-strahlung radiation used for the inspection of thick metal objects. In both non-destructive methods, the contrast sensitivity and the penetration power can be improved by using higher energy neutrons. At present direct techniques based either n Solid State Nuclear Track detectors (SSNTDs) or scintillating screens and transfer techniques using activation threshold detectors and radiographic films are applied for the detection of fast neutron images. Rather low detection sensitivity of film and SSNTD based fast neutron imaging methods and also rather poor inherent image contrast of SSNTD pose a problem for FNR in the fast neutron energy region 1-15 MeV interesting for NDT. For more efficient detection of fast neutron images the use of novel highly sensitive photoluminescent imaging plates (IP) in combination with threshold at the KFKI research reactor. The conventional IP produced by FUJI Photo Film Co. for the detection of beta and X-ray radiation were used. The threshold activation detectors were the reactions 115 In(n, n') 115m In, 64 Zn(n,p) 64 Cu, 56 Fe(n, p) 56 Mn, 24 Mg(n, p) 24 Na and 27 Al(n, α) 24 Na. These threshold reactions cover the fast neutron energy region between 0,7 MeV and 12 MeV. Pure, commercially available metals 0,1 mm to 0,25 mm thick made of In, Zn, Fe, Mg and Al were used as converter screens. The very high sensitivity of IP, the linearity of their response over 5 decades of exposure dose and the high dynamic digitalisation latitude enabled fast neutron radiography of image quality comparable to the quality of thermal NR. In our experimental conditions (φ n ∼ 10 8 n/cm 2 s, R Cd ∼ 2) the neutron exposure and IP exposure periods were still practical and comparable to the half life of the corresponding reaction products (half an hour to several hours). Even with the 27 Al(n.α) 24

  1. Det demokratiske argument for absolut ytringsfrihed

    DEFF Research Database (Denmark)

    Lægaard, Sune

    2014-01-01

    Artiklen diskuterer den påstand, at absolut ytringsfrihed er en nødvendig forudsætning for demokratisk legitimitet med udgangspunkt i en rekonstruktion af et argument fremsat af Ronald Dworkin. Spørgsmålet er, hvorfor ytringsfrihed skulle være en forudsætning for demokratisk legitimitet, og hvorfor...

  2. Musical Activity Tunes Up Absolute Pitch Ability

    DEFF Research Database (Denmark)

    Dohn, Anders; Garza-Villarreal, Eduardo A.; Ribe, Lars Riisgaard

    2014-01-01

    Absolute pitch (AP) is the ability to identify or produce pitches of musical tones without an external reference. Active AP (i.e., pitch production or pitch adjustment) and passive AP (i.e., pitch identification) are considered to not necessarily coincide, although no study has properly compared...

  3. On the absolute measure of Beta activities

    International Nuclear Information System (INIS)

    Sanchez del Rio, C.; Jimenez Reynaldo, O.; Rodriguez Mayquez, E.

    1956-01-01

    A new method for absolute beta counting of solid samples is given. The mea surements is made with an inside Geiger-Muller tube of new construction. The backscattering correction when using an infinite thick mounting is discussed and results for different materials given. (Author)

  4. Absolute measurement of a tritium standard

    International Nuclear Information System (INIS)

    Hadzisehovic, M.; Mocilnik, I.; Buraei, K.; Pongrac, S.; Milojevic, A.

    1978-01-01

    For the determination of a tritium absolute activity standard, a method of internal gas counting has been used. The procedure involves water reduction by uranium and zinc further the measurement of the absolute disintegration rate of tritium per unit of the effective volume of the counter by a compensation method. Criteria for the choice of methods and procedures concerning the determination and measurement of gaseous 3 H yield, parameters of gaseous hydrogen, sample mass of HTO and the absolute disintegration rate of tritium are discussed. In order to obtain gaseous sources of 3 H (and 2 H), the same reversible chemical reaction was used, namely, the water - uranium hydride - hydrogen system. This reaction was proved to be quantitative above 500 deg C by measuring the yield of the gas obtained and the absolute activity of an HTO standard. A brief description of the measuring apparatus is given, as well as a critical discussion of the brass counter quality and the possibility of obtaining equal working conditions at the counter ends. (T.G.)

  5. Absolutyzm i pluralizm (ABSOLUTISM AND PLURALISM

    Directory of Open Access Journals (Sweden)

    Renata Ziemińska

    2005-06-01

    Full Text Available Alethic absolutism is a thesis that propositions can not be more or less true, that they are true or false for ever (if true at all and that their truth is independent on any circumstances of their assertion. In negative version, easier to defend, alethic absolutism claims the very same proposition can not be both true and false relative to circumstances of its assertion. Simple alethic pluralism is a thesis that we have many concepts of truth. It is a very good way to dissolve the controversy between alethic relativism and absolutism. Many philosophical concepts of truth are the best reason for such pluralism. If concept is meaning of a name, we have many concepts of truth because the name 'truth' was understood in many ways. The variety of meanings however can be superficial. Under it we can find one idea of truth expressed in correspondence truism or schema (T. The content of the truism is too poor to be content of anyone concept of truth, so it usually is connected with some picture of the world (ontology and we have so many concepts of truth as many pictures of the world. The authoress proposes the hierarchical pluralism with privileged classic (or correspondence in weak sense concept of truth as absolute property.Other author's publications:

  6. Absolute Distance Measurements with Tunable Semiconductor Laser

    Czech Academy of Sciences Publication Activity Database

    Mikel, Břetislav; Číp, Ondřej; Lazar, Josef

    T118, - (2005), s. 41-44 ISSN 0031-8949 R&D Projects: GA AV ČR(CZ) IAB2065001 Keywords : tunable laser * absolute interferometer Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  7. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, J.P.J.

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the information on the

  8. Stimulus Probability Effects in Absolute Identification

    Science.gov (United States)

    Kent, Christopher; Lamberts, Koen

    2016-01-01

    This study investigated the effect of stimulus presentation probability on accuracy and response times in an absolute identification task. Three schedules of presentation were used to investigate the interaction between presentation probability and stimulus position within the set. Data from individual participants indicated strong effects of…

  9. Absolute tightness: the chemists hesitate to invest

    International Nuclear Information System (INIS)

    Anon.

    1996-01-01

    The safety requirements of industries as nuclear plants and the strengthening of regulations in the field of environment (more particularly those related to volatile organic compounds) have lead the manufacturers to build absolute tightness pumps. But these equipments do not answer all the problems and represent a high investment cost. In consequence, the chemists hesitate to invest. (O.L.)

  10. Solving Absolute Value Equations Algebraically and Geometrically

    Science.gov (United States)

    Shiyuan, Wei

    2005-01-01

    The way in which students can improve their comprehension by understanding the geometrical meaning of algebraic equations or solving algebraic equation geometrically is described. Students can experiment with the conditions of the absolute value equation presented, for an interesting way to form an overall understanding of the concept.

  11. Quantumness beyond quantum mechanics

    International Nuclear Information System (INIS)

    Sanz, Ángel S

    2012-01-01

    Bohmian mechanics allows us to understand quantum systems in the light of other quantum traits than the well-known ones (coherence, diffraction, interference, tunnelling, discreteness, entanglement, etc.). Here the discussion focusses precisely on two of these interesting aspects, which arise when quantum mechanics is thought within this theoretical framework: the non-crossing property, which allows for distinguishability without erasing interference patterns, and the possibility to define quantum probability tubes, along which the probability remains constant all the way. Furthermore, taking into account this hydrodynamic-like description as a link, it is also shown how this knowledge (concepts and ideas) can be straightforwardly transferred to other fields of physics (for example, the transmission of light along waveguides).

  12. Realizing Controllable Quantum States

    Science.gov (United States)

    Takayanagi, Hideaki; Nitta, Junsaku

    excitations in low-dimensional electron gases studied by far-infrared photoconductivity spectroscopy / C.-M. Hu. Control of photogenerated carriers and spins using surface acoustic waves / P. V. Santos, J. A. H. Stotz and R. Hey. PbTe nanostructures for spin filtering and detecting / G. Grabecki. G-factor control in an Ids-inserted InGaAs/InAlAs heterostructure / J. Nitta et al. Spin hall effect in p-type semiconductors / S. Murakami. Spin diffusion in mesoscopic superconducting A1 wires / Y.-S. Shin. H.-J. Lee and H.-W. Lee. Magnetization processes revealed by in-plane DC magnetoresistance measurements on manganite bicrystal thin film devices / R. Gunnarsson. M. Hanson and T. Claeson. Giant magnetoconductance at interface between a two-dimensional hole system and a magnetic semiconductor (Ga, Mn)As / Y. Hashimoto, S. Katsumoto and Y. Iye. Diffusion modes of the transport in diluted magnetic semiconductors / I. Kanazawa. Effect of an invasive voltage probe on the spin polarized current / J. Ohe and T. Ohtsuki -- 9. Spintronics in quantum dots. Tunable exchange interaction and Kondo screening in quantum dot devices / H. Tamura et al. Kondo effect in quantum dots in presence of itinerant-electron magnetism / J. Martinek et al. Optical band edge of II-VI and III-V based diluted magnetic semiconductors / M. Takahashi. Spin-polarized transport properties through double quantum dots / Y. Tanaka and N. Kawakami. RKKY interaction between two quantum dots embedded in an Aharonov-Bohm ring / Y. Utsumi et al. Fabrication and characterization of quantum dot single electron spin resonance devices / T. Kodera et al. Kondo effect in quantum dots with two orbitals and spin 1/2 - crossover from SU (4) to SU (2) symmetry / M. Eto. Detecting spin polarization of electrons in quantum dot edge channels by photoluminescence / S. Nomura. Manipulation of exchange interaction in a double quantum dot / M. Stopa, S. Tarucha and T. Hatano. Electron-density dependence of photoluminescence from Be

  13. Nonlinear Dynamics In Quantum Physics -- Quantum Chaos and Quantum Instantons

    OpenAIRE

    Kröger, H.

    2003-01-01

    We discuss the recently proposed quantum action - its interpretation, its motivation, its mathematical properties and its use in physics: quantum mechanical tunneling, quantum instantons and quantum chaos.

  14. Fast synthesize ZnO quantum dots via ultrasonic method.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  15. Characterization of CdSe polycrystalline films by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Brasil, M.J.S.P.

    1985-01-01

    The characterization of CdSe polycristalline films were done by photoluminescence spectroscopy, X-ray diffraction analysis, diagrams IxV, and efficiency of solar energy conversion for cells done by these films. The experimental data shown strong temperature dependence of annealing, and the optimum temperature around 650 0 C was determined. The films did not present photoluminescence before heat treatment, but the annealed sample spectrum showed fine structures in the excitonic region, crystal phase transformation, enhancement of grain size, and better efficiency of the cell. Measurements of photoluminescence between 2 and 300 K, showed two bands of infrared emission, width and intense enough. The shape, at half-width, and the integrated intensity of one these bands were described by a configuration coordinate model for deep centers. Based on obtained results, some hypothesis about the origin of these bands and its correlation with efficiency of cells done with CdSe polycrystalline films, are proposed. (M.C.K.) [pt

  16. Spin interactions in InAs quantum dots

    Science.gov (United States)

    Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

    2006-03-01

    Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

  17. Anti-Stokes Luminescence in High Quality Quantum Wells

    Science.gov (United States)

    Vinattieri, A.; Bogani, F.; Miotto, A.; Ceccherini, S.

    1997-11-01

    We present a detailed investigation of the anti-Stokes (AS) luminescence which originates from exciton recombination when below gap excitation is used, in a set of high quality quantum well structures. We observe strong excitonic resonances in the AS signal as measured from photoluminescence and photoluminescence excitation spectra. We demonstrate that neither the electromagnetic coupling between the wells nor the morphological disorder can explain this up-conversion effect. Time-resolved luminescence data after ps excitation and fs correlation spectroscopy results provide clear evidence of the occurrence of a two-step absorption which is assisted by the exciton population resonantly excited by the first photon.

  18. Terahertz-field-induced photoluminescence of nanostructured gold films

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

    2013-01-01

    We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

  19. Optical pumping and negative luminescence polarization in charged GaAs quantum dots

    Science.gov (United States)

    Shabaev, Andrew; Stinaff, Eric A.; Bracker, Allan S.; Gammon, Daniel; Efros, Alexander L.; Korenev, Vladimir L.; Merkulov, Igor

    2009-01-01

    Optical pumping of electron spins and negative photoluminescence polarization are observed when interface quantum dots in a GaAs quantum well are excited nonresonantly by circularly polarized light. Both observations can be explained by the formation of long-lived dark excitons through hole spin relaxation in the GaAs quantum well prior to exciton capture. In this model, optical pumping of resident electron spins is caused by capture of dark excitons and recombination in charged quantum dots. Negative polarization results from accumulation of dark excitons in the quantum well and is enhanced by optical pumping. The dark exciton model describes the experimental results very well, including intensity and bias dependence of the photoluminescence polarization and the Hanle effect.

  20. Spin interactions in InAs quantum dots and molecules

    Energy Technology Data Exchange (ETDEWEB)

    Doty, M.F.; Ware, M.E.; Stinaff, E.A.; Scheibner, M.; Bracker, A.S.; Ponomarev, I.V.; Badescu, S.C.; Reinecke, T.L.; Gammon, D. [Naval Research Lab, Washington, DC 20375 (United States); Korenev, V.L. [A.F. Ioffe Physical Technical Institute, St. Petersburg 194021 (Russian Federation)

    2006-12-15

    Spin interactions between particles in quantum dots or quantum dot molecules appear as fine structure in the photoluminescence spectra. Using the understanding of exchange interactions that has been developed from single dot spectra, we analyze the spin signatures of coupled quantum dots separated by a wide barrier such that inter-dot interactions are negligible. We find that electron-hole exchange splitting is directly evident. In dots charged with an excess hole, an effective hole-hole interaction can be turned on through tunnel coupling. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)