WorldWideScience

Sample records for znte epilayers grown

  1. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

    Science.gov (United States)

    Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

    2010-04-01

    ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

  2. Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

    International Nuclear Information System (INIS)

    Paiano, P.; Lovergine, N.; Mancini, A.M.; Prete, P.

    2005-01-01

    The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350 C using dimethylzinc (Me 2 Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micron-size hollow defects (with surface densities up to ∝10 6 cm -2 ) elongated in one of the left angle 011 right angle in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga 2 Te 3 extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p -ZnTe epilayers were prepared by tungsten evaporation and annealing at 350 C. The RT hole concentration in the epilayers varies almost linearly with Me 2 Zn molar flow between 2 x 10 15 cm -3 and 5 x 10 16 cm -3 . Temperature-dependent Hall measurements performed on samples grown at MFR≤1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10 16 cm -3 range and slowly increasing with Me 2 Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C Te -D Zn ), the donor impurity being further identified as Ga diffusing from the substrate. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers grown on (100)GaAs by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Paiano, P.; Lovergine, N.; Mancini, A.M. [Dipartimento di Ingegneria dell' Innovazione, Universita di Lecce, Via Arnesano, I-73100 Lecce (Italy); Prete, P. [Istituto per la Microelettronica e Microsistemi del CNR, Sezione di Lecce, Via Arnesano, I-73100 Lecce (Italy)

    2005-11-01

    The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350 C using dimethylzinc (Me{sub 2}Zn) and di-isopropyltelluride, varying their molar flow rate ratios (MFRs) between 0.17 and 3.10. Growth in nearly stoichiometric (MFR=1.03) conditions results in best surface morphology, while samples grown in Te-rich conditions (MFR>1.7) showed micron-size hollow defects (with surface densities up to {proportional_to}10{sup 6} cm{sup -2}) elongated in one of the left angle 011 right angle in-plane directions. The defects are associated to a local structural disorder of the material, ascribed to the formation of a Ga{sub 2}Te{sub 3} extrinsic phase at the ZnTe/GaAs interface. Ohmic contacts to p -ZnTe epilayers were prepared by tungsten evaporation and annealing at 350 C. The RT hole concentration in the epilayers varies almost linearly with Me{sub 2}Zn molar flow between 2 x 10{sup 15} cm{sup -3} and 5 x 10{sup 16} cm{sup -3}. Temperature-dependent Hall measurements performed on samples grown at MFR{<=}1.03 demonstrate that the material p-type conductivity originates from a single acceptor centre with an ionisation energy between 94.7 meV and 118 meV, its concentration being in the 10{sup 16} cm{sup -3} range and slowly increasing with Me{sub 2}Zn flow. We ascribe this acceptor to a complex formed by a substitutional carbon atom on a Te site and a donor on a nearest neighbor site (C{sub Te}-D{sub Zn}), the donor impurity being further identified as Ga diffusing from the substrate. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo; Sun, Wei-Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi 317-0056 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atsugi 243-0198 (Japan)

    2014-07-15

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2 -tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Nakasu, T.; Yamashita, S.; Aiba, T.; Hattori, S.; Sun, W.; Taguri, K.; Kazami, F.; Kobayashi, M.

    2014-01-01

    The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin films, sapphire substrates are preferred because they enable the optical path alignment to be simplified. ZnTe/sapphire heterostructures were focused upon, and ZnTe epilayers were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. Epitaxial relationships between the ZnTe thin films and the sapphire substrates with their various orientations were investigated using an X-ray diffraction pole figure method. (0001) c-plane, (1-102) r-plane, (1-100) m-plane, and (11-20) a-plane oriented sapphire substrates were used in this study. The epitaxial relationship between ZnTe and c-plane sapphire was found to be (111) ZnTe//(0001) sapphire with an in-plane orientation relationship of [−211] ZnTe//[1-100] sapphire. It was found that the (211)-plane ZnTe layer was grown on the m-plane of the sapphire substrates, and the (100)-plane ZnTe layer was grown on the r-plane sapphire. When the sapphire substrates were inclined from the c-plane towards the m-axis direction, the orientation of the ZnTe thin films was then tilted from the (111)-plane to the (211)-plane. The c-plane of the sapphire substrates governs the formation of the (111) ZnTe domain and the ZnTe epilayer orientation. These crystallographic features were also related to the atom arrangements of ZnTe and sapphire.

  6. Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

    International Nuclear Information System (INIS)

    Park, Y.M.; Andre, R.; Kasprzak, J.; Dang, Le Si; Bellet-Amalric, E.

    2007-01-01

    We have grown zinc-blende cadmium selenide (CdSe) epilayers on ZnTe-(0 0 1) substrate by molecular beam epitaxy (MBE). By controlling the substrate temperature and beam-equivalent pressure (BEP) ratio, of Se to Cd, we determined the most suitable growth condition based on reflection high-energy electron diffraction (RHEED) pattern. At a substrate temperature of 280 deg. C and a BEP ratio of 3.6, the RHEED pattern showed a V-like feature, indicating a rough surface with facets. As the substrate temperature was increased to 360 deg. C at the same BEP ratio, a V-like RHEED pattern moved to a clear streaky pattern. Moreover when the BEP ratio was increased to 4.8 at 360 deg. C of substrate temperature, a clear (2 x 1) reconstruction of the CdSe layer was observed. A CdSe/CdMgSe single quantum well structure was also grown on ZnTe-(0 0 1) substrate by MBE. The RHEED pattern showed a clear (2 x 1) surface reconstruction during the growth. By photoluminescence measurement, a good optical property of the structure was obtained

  7. Optical properties of ZnTe epilayers with submonolayer planar narrow gap inclusions

    Energy Technology Data Exchange (ETDEWEB)

    Agekian, V. F.; Filosofov, N. G., E-mail: n.filosofov@spbu.ru; Serov, A. Yu. [St. Petersburg State University, Universitetskaya nab. 7 – 9, 199034 Si. Petersburg (Russian Federation); Shtrom, I. V. [St. Petersburg State University, Universitetskaya nab. 7 – 9, 199034 Si. Petersburg (Russian Federation); Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); St. Petersburg Academic University — Nanotechnology Research and Education Centre, Russian Academy of Sciences, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Karczewski, G. [Institute of Physics Polish Academy of Science, Ał. Lotnikov 32/46, 02-668 Warsaw (Poland)

    2016-06-17

    The exciton luminescence of ZnTe matrices with the embedded CdTe submonolayer inclusions is investigated. It is shown that the exciton localized by CdTe narrow gap component dominates in the emission spectrum. These localized excitons are coupled mainly with the phonons belonging to the cadmium enriched layers. The real distribution of cadmium in the direction of the heterostructure growth is determined from the energy position of the localized exciton emission bands.

  8. (211) oriented ZnTe growth on m-plane sapphire by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Nakasu, Taizo [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kobayashi, Masakazu [Department of Electrical Engineering and Bioscience, Waseda University, Tokyo 169-8555 (Japan); Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, 2-8-26, Tokyo 169-0051 (Japan); Togo, Hiroyoshi [NTT Microsystem Integration Laboratories, Atugi-shi 243-0198 (Japan); Asahi, Toshiaki [Technology Development Center, JX Nippon Mining and Metals Corporation, Hitachi-shi 317-0056 (Japan)

    2013-11-15

    Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 C. When the layer was grown at 350 C, the (211) oriented domain dominated the film. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Investigation of ZnTe thin films grown by Pulsed Laser Deposition method

    International Nuclear Information System (INIS)

    Kotlyarchuk, B.; Savchuk, V.

    2007-01-01

    This paper is devoted to optimization of the Pulsed Laser Deposition (PLD) growth condition of ZnTe films on various substrates and subsequent investigation of relevant parameters of growth process, structural, optical and electrical properties of grown films. Studies of the effect of growth parameters on the structural quality and properties of grown films were carried out. X-ray diffraction measurements showed that the ZnTe films, which have been deposited at optimal substrate temperatures, were characterized by a (111) preferred orientation with large average grain size. The optical transmission and reflectance in the energy range 1.5-5.5 eV for films grown at various substrate temperatures were measured. We calculated the variation in the absorption coefficient with the photon energy from the transmittance spectrum for samples grown at various substrate temperatures. Obtained data were analyzed and the value of the absorption coefficient, for allowed direct transitions, has been determined as a function of photon energy. We found that the undoped ZnTe films, which were grown by the PLD method, are typically p-type and possess resistivity in the range of 10 3 Ωcm at room temperature. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Iron clustering in GaSe epilayers grown on GaAs(111)B

    International Nuclear Information System (INIS)

    Moraes, A R de; Mosca, D H; Mattoso, N; Guimaraes, J L; Klein, J J; Schreiner, W H; Souza, P E N de; Oliveira, A J A de; Vasconcellos, M A Z de; Demaille, D; Eddrief, M; Etgens, V H

    2006-01-01

    In this paper we report on the structural, morphological and magnetic properties of semiconducting GaSe epilayers, grown by molecular beam epitaxy, doped to different iron contents (ranging from 1 to 22 at.% Fe). Our results indicate that iron forms metallic Fe nanoparticles with diameters ranging from 1 to 20 nm embedded in the crystalline GaSe matrix. The Fe incorporation proceeds by segregation and agglomeration and induces a progressive disruption of the lamellar GaSe epilayers. The magnetization as a function of the temperature for zero-field cooling with the magnetic field parallel to the surface of the sample provides evidence of superparamagnetic behaviour of the nanoparticles. Cathodoluminescence experiments performed at room temperature reveal semiconducting behaviour even for samples with Fe concentrations as high as 20 at.%

  11. Characterization of single crystalline ZnTe and ZnSe grown by vapor phase transport

    Energy Technology Data Exchange (ETDEWEB)

    Trigubo, A B; Di Stefano, M C [FRBA-UTN, (1179) Buenos Aires (Argentina); Aguirre, M H [Dpto de Quim Inorg, Fac de Cs Quim, Univ Complutense, (28040) Madrid (Spain); Martinez, A M; D' Elia, R; Canepa, H; Heredia, E, E-mail: atrigubo@citefa.gov.a [CINSO-CITEFA: (1603) Villa Martelli, Pcia de Buenos Aires (Argentina)

    2009-05-01

    Tubular furnaces were designed and built to obtain single crystalline ZnTe and ZnSe ingots using respectively physical and chemical transport methods. Different temperature profiles and growth rates were analyzed in order to optimize the necessary crystalline quality for device development. Optical and scanning electron micrographs of the corrosion figures produced by chemical etching were used to obtain the dislocation density and the misorientation between adjacent subgrains in ZnTe and ZnSe wafers. Structural quality of the single crystalline material was determined by transmission electronic microscopy. Optical transmittance was measured by infrared transmission spectrometry and the resulting values were compared to commercial samples.

  12. Optical excitation of Er centers in GaN epilayers grown by MOCVD

    Science.gov (United States)

    George, D. K.; Hawkins, M. D.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.; Vinh, N. Q.

    2016-02-01

    In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the 4I13/2 → 4I15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE spectra reveal an existence of two types of Er optical centers from isolated and the defect-related Er centers in GaN epilayers. These centers have different PL spectra, local defect environments, decay dynamics, and excitation cross-sections. The isolated Er optical center, which can be excited by either excitation mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be observed through band-to-band excitation but has the largest crosssection. Our results indicate pathways for efficient optical excitation of Er-doped GaN semiconductors.

  13. Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure

    International Nuclear Information System (INIS)

    Arpapay, B.; Şahin, S.; Arıkan, B.; Serincan, U.

    2014-01-01

    The effect of four different cooling receipts on the surface morphologies of unintentionally-doped GaSb epilayers on GaSb (100) substrates grown by molecular beam epitaxy is reported. Those receipts include three different Sb beam equivalent pressure (BEP) levels and two different termination temperatures. Surface morphologies of epilayers were examined by wet etching, surface profiler, atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The results demonstrate that during the cooling period, a Sb BEP of 4.00 × 10 −4 Pa at a termination temperature of 400 °C induces a smooth surface without Sb condensation whereas same Sb BEP at a termination temperature of 350 °C forms a 300 nm thick Sb layer on the surface. In addition, it is revealed that by applying a wet etching procedure and using a surface profiler it is possible to identify this condensed layer from the two-sloped feature of mesa profile. - Highlights: • Sb beam flux termination temperature is crucial for redundant Sb condensation. • Sb beam flux level has a role on the thickness of redundant condensed Sb layer. • Redundant Sb layer thickness can be measured by two-sloped mesa structure

  14. Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

    International Nuclear Information System (INIS)

    Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

    2011-01-01

    Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

  15. SIMS studies of CI- doped Zn Se epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gard, F.S.; Riley, J.D.; Lekey, R.; Usher, B.F.; Prine, K.

    2004-01-01

    Chlorine is one of the most used species to produce n-type zinc selenium epilayers. In this paper, we present secondary ion mass spectrometry profiles of a series of chlorine-doped zinc selenium samples, which were grown in a molecular beam epitaxy chamber. These profiles have been used to examine the limitation of secondary ion mass spectrometry analysis of narrow chlorine-delta layers. In order to covert secondary ion mass spectrometry raw data to quantified data, the depth profile from a chlorine-implanted standard sample has been used to estimate the u seful ion yield o f chlorine and thus the instrument sensitivity for chlorine in a zinc selenium matrix. The u seful ion yield a nd detection limit of chlorine in the zinc selenium host matrix were calculated to be 4.7 X 10 -17 atoms/ cm 3 , respectively

  16. Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

    2017-10-15

    This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

  17. Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

    2014-11-05

    Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

  18. Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

    International Nuclear Information System (INIS)

    Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

    2013-01-01

    We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

  19. The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

    International Nuclear Information System (INIS)

    Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

    2006-01-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

  20. Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs(001)

    International Nuclear Information System (INIS)

    Jayavel, P.; Nakamura, S.; Koyama, T.; Hayakawa, Y.

    2006-01-01

    InAsSb ternary epilayers with arsenic composition of 0.5 have been grown on GaAs(001) substrates. Linear-graded and step-graded InAsSb buffer layers with an InSb layer have been used to relax lattice mismatch between the epilayer and substrate. X-ray diffraction results of the epilayers indicate that an enhancement in the peak intensity of the buffer layer samples is due to improved crystalline quality of the epilayers. We find that the growth technique of the buffer layer strongly influences the surface morphology and roughness of the epilayer. Hall effect measurements of the step-graded buffer layer samples show an order of magnitude higher electron mobility than the direct and linear-graded buffer layer samples. These results demonstrate that high crystalline quality and electron mobility of the InAs 0.5 Sb 0.5 ternary epilayers can be achieved by using the step-graded InAsSb buffer layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Structural characterization of zincblende Ga1-xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

    International Nuclear Information System (INIS)

    Fay, M.W.; Han, Y.; Brown, P.D.; Novikov, S.V.; Edmonds, K.W.; Campion, R.P.; Gallagher, B.L.; Foxon, C.T.

    2005-01-01

    Zincblende p-type Ga 1-x Mn x N epilayers, grown with and without AlN/GaN buffer layers using plasma-assisted molecular beam epitaxy on (001) oriented GaAs substrates, have been investigated using a variety of complementary transmission electron microscopy techniques. The epilayers were found to contain a high anisotropic density of stacking faults and microtwins. MnAs inclusions were identified at the Ga 1-x Mn x N/(001)GaAs interface extending into the substrate. The use of AlN/GaN buffer layers was found to inhibit the formation of these inclusions

  2. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

    Science.gov (United States)

    Moret, Matthieu; Briot, Olivier; Gil, Bernard

    2015-03-01

    Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

  3. The influence of growth parameters on the structure and composition of CuGaS{sub 2} epilayers grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Branch, M.S. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)]. E-mail: Matthew.Branch@nmmu.ac.za; Berndt, P.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Weber, J. [Institute for Low Temperature Physics, University of Technology, D-01062 Dresden (Germany)

    2006-04-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS{sub 2} is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac){sub 2}.Et{sub 3}N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac){sub 2}.Et{sub 3}N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS{sub 2}, yet enhance the formation of Ga{sub x}S{sub y} phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material.

  4. High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

    Directory of Open Access Journals (Sweden)

    Wei-Cheng Kuo

    2016-01-01

    Full Text Available We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD at low growth temperature (180°C. The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD and spectroscopy ellipsometry (SE. The full width at half maximum (FWHM of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

  5. Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

    Science.gov (United States)

    Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

    2018-04-01

    The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

  6. Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

    International Nuclear Information System (INIS)

    Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

    2004-01-01

    Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

  7. Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

    International Nuclear Information System (INIS)

    Marinova, Maya; Zoulis, Georgios; Robert, Teddy; Mercier, Frederic; Mantzari, Alkioni; Galben, Irina; Kim-Hak, Olivier; Lorenzzi, Jean; Juillaguet, Sandrine; Chaussende, Didier; Ferro, Gabriel; Camassel, Jean; Polychroniadis, Efstathios K.

    2009-01-01

    The results of transmission electron microscopy (TEM) with low-temperature photoluminescence (LTPL) and Raman studies of liquid phase grown epilayers on top of a vapor liquid solid (VLS) grown 3C-SiC buffer layer are compared. While the 6H-SiC substrate was completely covered by the 3C-SiC seed after the first VLS process, degradation occurred during the early stage of the liquid phase epitaxy process. This resulted in polytype instabilities, such that several rhombohedral forms stabilized one after the other. These (21R-SiC, 57R-SiC) eventually led after few microns to a final transition back to 6H-SiC. This interplay of polytypes resulted in a complex optical signature, with specific LTPL and Raman features.

  8. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila; Peres, M.; Yamashita, Y.; Morishima, Y.; Sato, S.; Franco, N.; Lorenz, K.; Kuramata, A.; Roqan, Iman S.

    2014-01-01

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  9. Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

    CERN Document Server

    Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

    1998-01-01

    We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

  10. High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

    KAUST Repository

    Mumthaz Muhammed, Mufasila

    2014-07-28

    Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

  11. Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.

    Science.gov (United States)

    Norris, D J; Myronov, M; Leadley, D R; Walther, T

    2017-12-01

    We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemical vapour deposition and forms islands on the surface of all Si wafers; however, the morphology (aspect ratio) of the deposited islands is different for each type of wafer. Moreover, the mechanism for strain relaxation is different for each type of wafer owing to the different orientation of the (111) slip planes with the growth surface. Ge grown on (001)Si is initially pseudomorphically strained, yielding small, almost symmetrical islands of high aspect ratio (clusters or domes) on top interdiffused SiGe pedestals, without any evidence of plastic relaxation by dislocations, which would nucleate later-on when the islands might have coalesced and then the Matthews-Blakeslee limit is reached. For (11¯0)Si, islands are flatter and more asymmetric, and this is correlated with plastic relaxation of some islands by dislocations. In the case of growth on (11¯1)Si wafers, there is evidence of immediate strain relaxation taking place by numerous dislocations and also twinning. In the case of untwined film/substrate interfaces, Burgers circuits drawn around certain (amorphous-like) regions show a nonclosure with an edge-type a/4[1¯12] Burgers vector component visible in projection along [110]. Microtwins of multiples of half unit cells in thickness have been observed which occur at the growth interface between the Si(11¯1) buffer layer and the overlying Ge material. Models of the growth mechanisms to explain the interfacial configurations of each type of wafer are suggested. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

  12. Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

    Science.gov (United States)

    O'Reilly, Andrew J.; Quitoriano, Nathaniel

    2018-01-01

    Uniaxially strained Si1-xGex channels have been proposed as a solution for high mobility channels in next-generation MOSFETS to ensure continued device improvement as the benefits from further miniaturisation are diminishing. Previously proposed techniques to deposit uniaxially strained Si1-xGex epilayers on Si (0 0 1) substrates require multiple deposition steps and only yielded thin strips of uniaxially strained films. A lateral liquid-phase epitaxy (LLPE) technique was developed to deposit a blanket epilayer of asymmetrically strained Si97.4Ge2.6 on Si in a single step, where the epilayer was fully strained in the growth direction and 31% strain-relaxed in the orthogonal direction. The LLPE technique promoted the glide of misfit dislocations, which nucleated in a region with an orthogonal misfit dislocation network, into a region where the dislocation nucleation was inhibited. This created an array of parallel misfit dislocations which were the source of the asymmetric strain. By observing the thicknesses at which the dislocation network transitions from orthogonal to parallel and at which point dislocation glide is exhausted, the separate critical thicknesses for dislocation nucleation and dislocation glide can be determined.

  13. Effects of In-situ UV Irradiation on the Uniformity and Optical Properties of GaAsBi Epi-layers Grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Beaton, Daniel A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steger, Mark [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Christian, Theresa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mascarenhas, Angelo J [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-12-14

    In-situ UV illumination influences the incorporation dynamics of bismuth adatom in GaAs. Here we use the inherent variation of the fluence across the sample to explore the role of the incident irradiation. With illumination it is found that steady state growth processes are achieved more quickly resulting in more abrupt interfaces, as well as uniform GaAs1-xGaAs1-xBixBix epi-layers. Comparisons of low temperature photoluminescence spectra show an increasing density of clusters of incorporated bismuth atoms with decreasing incident fluence.

  14. Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

    International Nuclear Information System (INIS)

    Fong, W.K.; Ng, S.W.; Leung, B.H.; Surya, Charles

    2003-01-01

    We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer (DBL) structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer (ITBL). In this study, three types of DBL were investigated: (i) thin GaN low-temperature buffer layer/GaN ITBL (type I); (ii) nitridated Ga metal film/GaN ITBL (type II); and (iii) thin AlN high-temperature buffer layer/GaN ITBL (type III). Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs

  15. Micro-Raman scattering in ZnTe thin films

    International Nuclear Information System (INIS)

    Larramendi, E. M.; Gutierrez Z-B, K.; Hernandez, E.; Melo, O. de; Berth, G.; Wiedemeier, V.; Lischka, K; Schikora, D.; Woggon, U.

    2008-01-01

    In this work we present micro-raman measurements on ZnTe thin films grown by isothermal closed space sublimation on GaAs(001) substrates in helium and nitrogen atmospheres. Micro-raman spectra were recorded at room temperature using the backscattering geometry (illuminated spot: 3 μm2, 0.3 cm-1 of resolution and the line 532 nm of a DPSSL as power excitation). Up to four order LO-phonon replicas and no peak from TO phonon were observed in the micro-raman spectra as evidence of the epitaxial character and good quality of the films (the TO mode is forbidden according to the selection rules for backscattering along [001] of this heterostructure). The micro-raman spectra also revealed two features at low energy, which have been assigned incorrectly in recent works. We demonstrate that these raman peaks can be associated to the presence of few monolayers of crystalline tellurium or its oxides on the surface of the films. These features were not observed in micro-raman spectra of as grown ZnTe films terminated in a Zn surface. However, they were detected after a prolonged exposure of the samples to air. In addition, it is shown that this effect is accelerated under a high power laser excitation (laser annealing) as used in conventional micro-Raman measurement setups. Preliminary results that suggest the inclusion of nitrogen in ZnTe structure are also shown. (Full text)

  16. Characterisation of InAs-based epilayers by FTIR spectroscopy

    CSIR Research Space (South Africa)

    Baisitse, TR

    2008-01-01

    Full Text Available In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs...

  17. Growth and Characterization of ZnTe Crystal

    International Nuclear Information System (INIS)

    Nann Thazin

    2011-12-01

    High quality ZnTe crystals have been synthesized by vapor Transport method. The grown crystals were p-type. The concentration and mobility were 2.5 x 10 16 cm-3 and 23 cm2/Vs at 300K, according to Hall effect measurements. Surface morphology of the crystal was investigated by scanning electron microscope (SEM). Crystal orientation and lattice parameters of the crystals were also analysed by XRD. From X-ray diffraction studies the structure of the grown crystals were found to be zinc-blende. The crystal emitted light in the visible range at room temperature.

  18. Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

    International Nuclear Information System (INIS)

    Nishio, Mitsuhiro; Hayashida, Kazuki; Harada, Hiroki; Mitsuishi, Yoshiaki; Guo Qixin; Ogawa, Hiroshi

    2001-01-01

    ZnTe homoepitaxial films have been deposited at substrate temperatures between 27 deg. C and 100 deg. C by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride. Effects of diethylzinc transport rate and substrate temperature upon the photoluminescence properties of the ZnTe films have been clarified. Strong deep level emissions centered at 1.85 and 2.1 eV related to defects such as vacancy-impurity complex become emerged with increasing diethylzinc transport rate or substrate temperature. A sharply excitonic emission at 2.375 eV associated with shallow acceptors is observed and neither a donor-acceptor pair recombination nor a deep level luminescence signal is detected in the spectrum of the film grown under the nearly stoichiometric condition, which indicates that ZnTe films of good quality can be grown even at room temperature by this growth technique

  19. Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

    International Nuclear Information System (INIS)

    Kumar, Mahesh; Bhat, Thirumaleshwara N.; Roul, Basanta; Rajpalke, Mohana K.; Kalghatgi, A.T.; Krupanidhi, S.B.

    2012-01-01

    Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.

  20. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hussein, A.SH.; Thahab, S.M.; Hassan, Z.; Chin, C.W.; Abu Hassan, H.; Ng, S.S.

    2009-01-01

    The microstructure and optical properties of Al x Ga 1-x N/GaN/AlN films on Si (1 1 1) substrate grown by plasma-assisted molecular beam epitaxy (MBE) have been studied and investigated. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), high-resolution X-ray diffraction (HR-XRD), energy dispersive X-ray spectroscopy (EDS) line analysis and photoluminescence (PL) were used to investigate a reconstruction pattern, cross-section, mole fraction and crystalline quality of the heterostructure. By applying the Vegard's law, a high Al-mole fraction of Al x Ga 1-x N sample with value of 0.43 has been obtained and compared with EDS line analysis measurement value. PL spectrum has exhibited a sharp and intense band edge emission of GaN with the absence of yellow emission band, indicating good crystal quality of the Al x Ga 1-x N has been successfully grown on Si substrate.

  1. Characterisation of InAs-based epilayers by FTIR spectroscopy

    International Nuclear Information System (INIS)

    Baisitse, T.R.; Forbes, A.; Katumba, G.; Botha, J.R.; Engelbrecht, J.A.A.

    2008-01-01

    In this paper, infrared reflectance spectroscopy was employed to extract information on the optical and electrical properties of metal organic vapour phase epitaxial (MOVPE) grown InAs and InAsSb epilayers. These epitaxial layers were grown on InAs and GaAs substrates and characterised by infrared reflectance spectroscopy and Hall measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Growth and optical properties of CdTe quantum dots in ZnTe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

    2011-09-12

    We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

  3. Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

    Directory of Open Access Journals (Sweden)

    Wen Hua-Chiang

    2010-01-01

    Full Text Available Abstract In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred on both sides of the scratches formed on the GaN epilayers. It is suggested that cracking dominates in the case of GaN epilayers while ploughing during the process of scratching; the appearances of the scratched surfaces were significantly different for the GaN epilayers on the c- and a-axis sapphire substrates. In addition, compared to the c-axis substrate, we obtained higher values of the coefficient of friction (μ and deeper penetration of the scratches on the GaN a-axis sapphire sample when we set the ramped force at 4,000 μN. This discrepancy suggests that GaN epilayers grown on c-axis sapphire have higher shear resistances than those formed on a-axis sapphire. The occurrence of pile-up events indicates that the generation and motion of individual dislocation, which we measured under the sites of critical brittle transitions of the scratch track, resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.

  4. Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition

    International Nuclear Information System (INIS)

    Gandhi, T.; Raja, K.S.; Misra, M.

    2009-01-01

    Growth of ZnTe nanowires using a pulse-reverse electrodeposition technique from a non-aqueous solution is reported. ZnTe nanowires were grown on to an ordered nanotubular TiO 2 template in a propylene carbonate solution at 130 o C inside a controlled atmosphere glove box. The pulse-reverse electro deposition process consisted of a cathodic pulse at - 0.62 V and an anodic pulse at 0.75 V Vs Zn 2+ /Zn. Stoichiometry growth of crystalline ZnTe nanowires was observed in the as-deposited condition. The anodic pulse cycle of the pulse-reverse electrodeposition process presumably introduced zinc vacancies as deep level acceptors at an energy level of E v + 0.47 eV. The resultant ZnTe nanowires showed p-type semiconductivity with a resistivity of 7.8 x 10 4 Ω cm and a charge carrier density of 1.67 x 10 14 cm -3 . Annihilation of the defects occurred upon thermal annealing that resulted in marginal decrease in the defect density.

  5. Carrier dynamics in epilayers and nanocolumns of ternary AlGaN with a tunable bandgap

    International Nuclear Information System (INIS)

    Aleksiejunas, R; Šcajev, P; Nargelas, S; Miasojedovas, S; Jarašiunas, K; Trinkler, L; Grigorjeva, J; Berzina, B; Chen, K H; Chen, Y T; Chen, M W; Chen, L C

    2012-01-01

    We apply several optical time-resolved techniques to investigate the dynamics of excess carriers in Al x Ga 1−x N nanocolumns grown on (111) silicon substrates and in thick Al x Ga 1−x N epitaxial layers deposited on sapphire. We demonstrate that carrier lifetime drops in nanocolumns by several times if compared to epilayers with similar Al content; in addition, recombination rate displays a strong nonlinearity on excitation. On the other hand, carrier localization effects observed in the epilayers completely disappear in nanocolumns.

  6. THz induced nonlinear absorption in ZnTe

    DEFF Research Database (Denmark)

    Pedersen, Pernille Klarskov; Jepsen, Peter Uhd

    2015-01-01

    Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied.......Absorption spectra of ZnTe during strong-field THz interaction are investigated. Bleaching of the difference phonon modes below the fundamental TO mode is observed when field strengths higher than 4 MV/cm are applied....

  7. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  8. Thermal analyzes of phosphate glasses doped with Yb{sup 3+} and ZnTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, A.M.; Bell, M.J.V. [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Anjos, V., E-mail: virgilio@fisica.ufjf.br [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Pinheiro, A.S.; Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física da Universidade Federal de Uberlândia, CP 593, CEP 38400-902 Uberlândia, MG (Brazil)

    2016-01-15

    This work studies the thermal properties of a glass matrix called PZABP doped with ZnTe and co-doped with Yb{sup 3+} with nominal composition 60P{sub 2}O{sub 5}, 15ZnO, 5Al{sub 2}O{sub 3}, 10BaO, and 10 PbO (mol%). The presence of ZnTe results in the formation of nanocrystals which are evidenced by optical absorption, X-Ray Diffraction (XRD) and Raman scattering. Thermal lens and Volumetric Heat Capacity techniques were used to investigate thermal diffusivity (D), thermal conductivity (K) and optical path variation with temperature (ds/dT). The outcomes indicate high values for the thermal diffusivity and a relatively small thermal conductivity, i.e., around 2.6×10{sup −3} cm{sup 2}/s and 3.4×10{sup −3} W cm{sup −1} K{sup −1}, respectively. On the other hand, a low ds/dT value, 1.0×10{sup −6} K{sup −1}, was obtained as required for an active laser medium. Moreover, it has been observed that the matrix allows high concentration of dopants without compromising its thermal properties. As a result, PZABP glasses may be pointed out as a promising material to applications in high power photonics devices. - Highlights: • UV transparentglass matrix (PZABP) is used for Yb{sup 3+}doping. • Bulk like and quantum dots like crystals of ZnTe were grown. • Thermal properties point out PZABP as a material to high power photonics devices.

  9. X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet-Boudet, N.

    1996-10-07

    This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

  10. Raman scattering by the E{sub 2h} and A{sub 1}(LO) phonons of In{sub x}Ga{sub 1-x}N epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, R.; Ibanez, J.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n, 08028 Barcelona, Catalonia (Spain); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Serafinczuk, J. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Martinez, O.; Jimenez, J. [Departamento de Fisica de la Materia Condensada, Cristalografia, y Mineralogia, Universidad de Valladolid, 47011 Valladolid (Spain); Henini, M. [Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Boney, C.; Bensaoula, A. [Department of Physics, University of Houston, 4800 Calhoun, Houston, Texas 77004 (United States)

    2012-03-15

    We use Raman scattering to investigate the composition behavior of the E{sub 2h} and A{sub 1}(LO) phonons of In{sub x}Ga{sub 1-x}N and to evaluate the role of lateral compositional fluctuations and in-depth strain/composition gradients on the frequency of the A{sub 1}(LO) bands. For this purpose, we have performed visible and ultraviolet Raman measurements on a set of high-quality epilayers grown by molecular beam epitaxy with In contents over a wide composition range (0.25 < x < 0.75). While the as-measured A{sub 1}(LO) frequency values strongly deviate from the linear dispersion predicted by the modified random-element isodisplacement (MREI) model, we show that the strain-corrected A{sub 1}(LO) frequencies are qualitatively in good agreement with the expected linear dependence. In contrast, we find that the strain-corrected E{sub 2h} frequencies exhibit a bowing in relation to the linear behavior predicted by the MREI model. Such bowing should be taken into account to evaluate the composition or the strain state of InGaN material from the E{sub 2h} peak frequencies. We show that in-depth strain/composition gradients and selective resonance excitation effects have a strong impact on the frequency of the A{sub 1}(LO) mode, making very difficult the use of this mode to evaluate the strain state or the composition of InGaN material.

  11. Self-Assembled Formation of Well-Aligned Cu-Te Nano-Rods on Heavily Cu-Doped ZnTe Thin Films

    Science.gov (United States)

    Liang, Jing; Cheng, Man Kit; Lai, Ying Hoi; Wei, Guanglu; Yang, Sean Derman; Wang, Gan; Ho, Sut Kam; Tam, Kam Weng; Sou, Iam Keong

    2016-11-01

    Cu doping of ZnTe, which is an important semiconductor for various optoelectronic applications, has been successfully achieved previously by several techniques. However, besides its electrical transport characteristics, other physical and chemical properties of heavily Cu-doped ZnTe have not been reported. We found an interesting self-assembled formation of crystalline well-aligned Cu-Te nano-rods near the surface of heavily Cu-doped ZnTe thin films grown via the molecular beam epitaxy technique. A phenomenological growth model is presented based on the observed crystallographic morphology and measured chemical composition of the nano-rods using various imaging and chemical analysis techniques. When substitutional doping reaches its limit, the extra Cu atoms favor an up-migration toward the surface, leading to a one-dimensional surface modulation and formation of Cu-Te nano-rods, which explain unusual observations on the reflection high energy electron diffraction patterns and apparent resistivity of these thin films. This study provides an insight into some unexpected chemical reactions involved in the heavily Cu-doped ZnTe thin films, which may be applied to other material systems that contain a dopant having strong reactivity with the host matrix.

  12. Vibrational properties of ZnTe at high pressures

    International Nuclear Information System (INIS)

    Camacho, J.; Loa, I.; Syassen, K.; Cantarero, A.

    2002-01-01

    Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T=300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Grueneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and orthorhombic (Cmcm) phases of ZnTe. (author)

  13. Vibrational properties of ZnTe at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Camacho, J. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany) and Instituto de Ciencia de Materiales, Universidad de Valencia, Valencia (Spain)]. E-mail: Juana.Camacho@uv.es; Loa, I.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Cantarero, A. [Instituto de Ciencia de Materiales, Universidad de Valencia, Valencia (Spain)

    2002-02-04

    Raman spectra of ZnTe were measured under hydrostatic pressures up to 15 GPa at T=300 K. Results for the frequencies of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) are used to set up a rigid-ion model of the phonon dispersion relations under pressure. Calculated phonon densities of states, mode Grueneisen parameters and the thermal expansion coefficient as a function of pressure are discussed. The effect of pressure on the widths and intensities of Raman spectral features is considered. Raman spectra of high-pressure phases of ZnTe are reported. These spectra indicate the possible existence of a new phase near 13 GPa, intermediate between the cinnabar and orthorhombic (Cmcm) phases of ZnTe. (author)

  14. Thermal annealing and ionic abrasion in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.

    1975-01-01

    Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

  15. Electronic bandstructure of the ZnTe absorber material

    Energy Technology Data Exchange (ETDEWEB)

    Fritsch, Daniel [Leibniz Institute for Solid State and Materials Research IFW Dresden (Germany); Schmidt, Heidemarie [Forschungszentrum Dresden-Rossendorf, Dresden (Germany)

    2009-07-01

    Due to its large absorption coefficient, zinc telluride proved to be useful for the production of high-efficiency multi-junction solar cells. Nowadays ZnTe with a mixture of zincblende and wurtzite phases is fabricated by thin film growth techniques. The optical properties of both phases have been extensively studied by ab initio density functional methods. Here we focus on the question whether the effective electron and hole mass in ZnTe are small enough to meet the high-efficiency expectation of the ZnTe absorber material in solar cells and present direction dependent effective mass and Luttinger and Luttinger-like parameters of cubic and wurtzite ZnTe, respectively. Making use of the transferability of ionic model potential parameters and the experimentally known transition energies of different II-VI compounds ZnX (X=O,S,Se,Te), we obtained one single set of cationic model parameters for the Zn atom. The calculations have been performed by means of the empirical pseudopotential method using a simple empty core model potential.

  16. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  17. Thermal conductivity of ZnTe investigated by molecular dynamics

    International Nuclear Information System (INIS)

    Wang Hanfu; Chu Weiguo

    2009-01-01

    The thermal conductivity of ZnTe with zinc-blende structure has been computed by equilibrium molecular dynamics method based on Green-Kubo formalism. A Tersoff's potential is adopted in the simulation to model the atomic interactions. The calculations are performed as a function of temperature up to 800 K. The calculated thermal conductivities are in agreement with the experimental values between 150 K and 300 K, while the results above the room temperature are comparable with the Slack's equation.

  18. Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Guo, W.; Bondi, A. [Universite Europeenne de Bretagne, INSA, FOTON, UMR 6082, F-35708 Rennes (France); Cornet, C., E-mail: charles.cornet@insa-rennes.fr [Universite Europeenne de Bretagne, INSA, FOTON, UMR 6082, F-35708 Rennes (France); Letoublon, A.; Durand, O.; Rohel, T.; Boyer-Richard, S.; Bertru, N.; Loualiche, S.; Even, J.; Le Corre, A. [Universite Europeenne de Bretagne, INSA, FOTON, UMR 6082, F-35708 Rennes (France)

    2012-01-15

    We have investigated quantitatively anti-phase domains (APD) structural properties in 20 nm GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive analysis methods. These analyses, including atomic force microscopy and X-ray diffraction, are applied to samples grown by various molecular beam epitaxy growth modes. Roughness, lateral crystallite size of the epilayer, ratio of antiphase domains and their relationship are discussed. It is shown that both these analysis methods are useful to clarify the physical mechanisms occurring during the heterogeneous growth. Low temperature migration enhanced epitaxy is found to guarantee smoother surface than conventional molecular beam epitaxy. Effect of annealing temperature on antiphase boundaries (APBs) thermodynamics is discussed. The modification of the thermodynamic equilibrium through a thermal activation of APBs motion is expected to play an important role in the dynamic evolution of surfaces during thermal annealing and growth.

  19. Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

    International Nuclear Information System (INIS)

    Guo, W.; Bondi, A.; Cornet, C.; Létoublon, A.; Durand, O.; Rohel, T.; Boyer-Richard, S.; Bertru, N.; Loualiche, S.; Even, J.; Le Corre, A.

    2012-01-01

    We have investigated quantitatively anti-phase domains (APD) structural properties in 20 nm GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive analysis methods. These analyses, including atomic force microscopy and X-ray diffraction, are applied to samples grown by various molecular beam epitaxy growth modes. Roughness, lateral crystallite size of the epilayer, ratio of antiphase domains and their relationship are discussed. It is shown that both these analysis methods are useful to clarify the physical mechanisms occurring during the heterogeneous growth. Low temperature migration enhanced epitaxy is found to guarantee smoother surface than conventional molecular beam epitaxy. Effect of annealing temperature on antiphase boundaries (APBs) thermodynamics is discussed. The modification of the thermodynamic equilibrium through a thermal activation of APBs motion is expected to play an important role in the dynamic evolution of surfaces during thermal annealing and growth.

  20. ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films

    International Nuclear Information System (INIS)

    Ohgai, T; Ikeda, T; Ohta, J

    2013-01-01

    ZnTe amorphous semiconductor nanowires array was electrodeposited into the nanochannels of ion-track etched polycarbonate membrane thin films from acidic aqueous solution at 313 K. ZnTe electrodeposits with Zn-rich composition was obtained over the wide range of cathode potential from −0.8 V to −1.1 V and the growth rate of ZnTe amorphous nanowires was around 3 nm.sec −1 at the cathode potential of −0.8 V. Cylindrical shape of the nanowires was precisely transferred from the nanochannels and the aspect ratio reached up to ca. 40. ZnTe amorphous phase electrodeposited at 313 K was crystallized by annealing at 683 K and the band gap energy of ZnTe crystalline phase reached up to ca. 2.13 eV.

  1. Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Chen, Yen-Liang; Lo, Ikai; Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi; Tsai, Jenn-Kai; Schuber, Ralf; Schaadt, Daniel

    2012-01-01

    We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69″ to 59.43″ for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 × 5 μm 2 with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: ► The samples were grown by plasma-assisted molecular beam epitaxy. ► The GaN epilayer was grown on sapphire substrate. ► The samples were characterized by X-ray diffraction and atomic force microscopy. ► The sample quality was improved by gradient buffer layer.

  2. Improvement of GaN epilayer by gradient layer method with molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yen-Liang [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Gau, Ming-Hong; Hsieh, Chia-Ho; Sham, Meng-Wei; Pang, Wen-Yuan; Hsu, Yu-Chi [Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC (China); Tsai, Jenn-Kai [Department of Electronics Engineering, National Formosa University, Hu-Wei, Yun-Lin County 63208, Taiwan, ROC (China); Schuber, Ralf; Schaadt, Daniel [Institute of Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)

    2012-07-31

    We demonstrated a molecular beam epitaxy method to resolve the dilemma between structural and morphological quality in growth of the GaN epilayer. A gradient buffer layer was grown in such a way that the N/Ga ratio was gradually changed from nitrogen-rich to gallium-rich. The GaN epitaxial layer was then grown on the gradient buffer layer. In the X-ray diffraction analysis of GaN(002) rocking curves, we found that the full width at half-maximum was improved from 531.69 Double-Prime to 59.43 Double-Prime for the sample with a gradient buffer layer as compared to a purely gallium-rich grown sample. Atomic force microscopy analysis showed that the root-mean-square roughness of the surface was improved from 18.28 nm to 1.62 nm over an area of 5 Multiplication-Sign 5 {mu}m{sup 2} with respect to a purely nitrogen-rich grown sample. Raman scattering showed the presence of a slightly tilted plane in the gradient layer. Furthermore we showed that the gradient layer can also slash the strain force caused by either Ga-rich GaN epitaxial layer or AlN buffer layer. - Highlights: Black-Right-Pointing-Pointer The samples were grown by plasma-assisted molecular beam epitaxy. Black-Right-Pointing-Pointer The GaN epilayer was grown on sapphire substrate. Black-Right-Pointing-Pointer The samples were characterized by X-ray diffraction and atomic force microscopy. Black-Right-Pointing-Pointer The sample quality was improved by gradient buffer layer.

  3. Excitonic surface polaritons in luminescence from ZnTe crystals

    International Nuclear Information System (INIS)

    Brodin, M.S.; Bandura, V.M.; Matsko, M.G.

    1984-01-01

    The form and structure of reflection and exciton-polariton luminescence spectra of ZnTe crystals are studied in the region of the ground (n = 1) exciton state. The longitudinal-transverse splitting magnitude ΔE/sub LT/ is determined from the shape of the reflection spectra. A detected doublet structure of an emission band from the lower polariton branch is associated with the k-linear term. The evolution of bulk and surface polariton luminescence spectra versus temperature and wavelength of the exciting light is investigated. (author)

  4. Excitonic surface polaritons in luminescence from ZnTe crystals

    Energy Technology Data Exchange (ETDEWEB)

    Brodin, M.S.; Bandura, V.M.; Matsko, M.G. (AN Ukrainskoj SSR, Kiev. Inst. Fiziki)

    1984-10-01

    The form and structure of reflection and exciton-polariton luminescence spectra of ZnTe crystals are studied in the region of the ground (n = 1) exciton state. The longitudinal-transverse splitting magnitude ..delta..E/sub LT/ is determined from the shape of the reflection spectra. A detected doublet structure of an emission band from the lower polariton branch is associated with the k-linear term. The evolution of bulk and surface polariton luminescence spectra versus temperature and wavelength of the exciting light is investigated.

  5. Determination of valence band parameters in ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Froehlich, D.; Noethe, A.; Reimann, K. (Duesseldorf Univ. (Germany, F.R.). Physikalisches Inst. - Lehrstuhl 2)

    1984-10-01

    The fine structure of the 2P exciton in ZnTe is studied by two-photon-absorption. The energy splitting into four states, caused by the envelope-hole coupling, allows the determination of the Luttinger parameters ..gamma../sub 2/ and ..gamma../sub 3/, which describe the complex valence band. ..gamma../sub 2/ = 0.8 and ..gamma../sub 3/ = 1.7 are obtained. These values are compared to results of other experiments mainly on 1S excitons.

  6. High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

    Science.gov (United States)

    Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

    2017-07-01

    The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

  7. Annihilation characteristics in as-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; La Cruz, R.M. de; Pareja, R.

    1991-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of Zns, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. Zns and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of Zns, ZnSe and ZnTe, respectively. 8 refs., 3 figs

  8. Annihilation characteristics in As-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.; Moser, P.

    1992-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of ZnS, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. ZnS and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of ZnS, ZnSe and ZnTe, respectively

  9. Preparation and characterization of ZnTe thin films by SILAR method

    International Nuclear Information System (INIS)

    Kale, S.S.; Mane, R.S.; Pathan, H.M.; Shaikh, A.V.; Joo, Oh-Shim; Han, Sung-Hwan

    2007-01-01

    Nanocrystalline zinc telluride (ZnTe) thin films were prepared by using successive ionic layer adsorption and reaction (SILAR) method from aqueous solutions of zinc sulfate and sodium telluride. The films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The synthesized ZnTe thin films were nanocrystalline with densely aggregated particles in nanometer scale and were free from the voids or cracks. The optical band gap energy of the film was found to be thickness dependent. The elemental chemical compositional stoichiometric analysis revealed good Zn:Te elemental ratio of 53:47

  10. Large scale ZnTe nanostructures on polymer micro patterns via capillary force photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Florence, S. Sasi, E-mail: sshanmugaraj@jazanu.edu.sa; Can, N.; Adam, H. [Department of Physics, Jazan University, Jizan-114 (Saudi Arabia); Sachan, P.; Gupta, R. K. [DST-Unit on Nanosciences, Indian Institute of Technology, Kanpur (India); Arockiasamy, L. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Umadevi, M. [Department of Physics, Mother Teresa Women’s University, Kodaikanal-624101 (India)

    2016-06-10

    A novel approach to prepare micro patterns ZnTe nanostructures on Si (100) substrate using thermal evaporation is proposed by capillary Force Lithography (CFL) technique on a self-assembled sacrificial Polystyrene mask. Polystyrene thin films on Si substrates are used to fabricate surface micro-relief patterns. ZnTe nanoparticles have been deposited by thermal evaporation method. The deposited ZnTe nanoparticles properties were assessed by Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM). SEM studies indicated that the particles are uniform in size and shape, well dispersed and spherical in shape. This study reports the micro-arrays of ZnTe nanoparticles on a self-assembled sacrificial PS mask using a capillary flow photolithography process which showed excellent, morphological properties which can be used in photovoltaic devices for anti-reflection applications.

  11. Optical properties and surface morphology of ZnTe thin films prepared by multiple potential steps

    Energy Technology Data Exchange (ETDEWEB)

    Gromboni, Murilo F.; Lucas, Francisco W. S.; Mascaro, Lucia H., E-mail: lmascaro@ufscar.br [Universidade de Federal de Sao Carlos (LIEC/UFSCar), SP (Brazil). Departamento de Quimica. Lab. de Eletroquimica e Ceramica

    2014-03-15

    In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 μA cm{sup -2} and dendritic morphology (author)

  12. Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

    Science.gov (United States)

    Rajpal, Shashikant; Kumar, S. R.

    2018-04-01

    Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

  13. Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

    International Nuclear Information System (INIS)

    Wang, R.X.; Xu, S.J.; Fung, S.; Beling, C.D.; Wang, K.; Li, S.; Wei, Z.F.; Zhou, T.J.; Zhang, J.D.; Huang Ying; Gong, M.

    2005-01-01

    GaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A 1 (LO) peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects (likely to be Ge Ga ) give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN

  14. Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ruppert, P.; Hommel, D.; Behr, T.; Heinke, H.; Waag, A.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1994-04-14

    The properties of molecular beam epitaxial growth of ZnSe epilayers deposited directly on a GaAs substrate are compared to those grown on a GaAs buffer layer. The superior quality of the latter is confirmed by RHEED, TEM and X-ray diffraction. Based on RHEED oscillation studies, a model explaining the dependence of the ZnSe growth rate on Zn and Se fluxes and the substrate temperature is developed taking into account physisorbed and chemisorbed states. For partially relaxed epilayers, the correlation between the relaxation state and the crystalline mosaicity, as found by high resolution X-ray diffraction, is discussed

  15. Synthesis and characterization of small size fluorescent LEEH caped blue emission ZnTe quantum dots

    Directory of Open Access Journals (Sweden)

    Patnaik Sumanta Kumar

    2017-04-01

    Full Text Available We report here for the first time the synthesis of LEEH caped very small size (2 nm ZnTe quantum dots at low temperature (less than 100 °C using a simple chemical route. The effects of aging and stirring time on the absorption spectra of the quantum dots were investigated. The synthesized nanocrystal (NC was characterized by PL, TEM, XRD and the formation of very small size quantum dots having FCC structure was confirmed. Further, blue emission from the prepared sample was observed during exposure to monochromatic UV radiation. ZnTe NCs obtained in this study were found to be more stable compared to those presented in literature reports. ZnTe NCs may be considered as a new material in place of CdTe for optoelectronics devices.

  16. Structural analysis of nanocrystalline ZnTe alloys synthesized by melt quenching technique

    Science.gov (United States)

    Singh, Harinder; Singh, Tejbir; Thakur, Anup; Sharma, Jeewan

    2018-05-01

    Nanocrystalline ZnxTe100-x (x=0, 5, 20, 30, 40, 50) alloys have been synthesized using melt quenching technique. Energy-dispersive X-Ray spectroscopy (EDS) has been used to verify the elemental composition of samples. Various absorption modes are recorded from Fourier transform infrared spectroscopy (FTIR) confirming the formation of ZnTe. The structural study has been performed using X-Ray Diffraction (XRD) method. All synthesized samples have been found to be nanocrystalline in nature with average crystallite size in the range from 49.3 nm to 77.1 nm. Results have shown that Zn0Te100 exhibits hexagonal phase that transforms into a cubic ZnTe phase as the amount of zinc is increased. Pure ZnTe phase has been obtained for x = 50. The texture coefficient (Tc) has been calculated to find the prominent orientations of different planes.

  17. Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

    International Nuclear Information System (INIS)

    Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon

    2004-01-01

    The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Temperature dependence of Raman scattering by optical phonons in ZnTe

    International Nuclear Information System (INIS)

    Simmonds, P.E.; Martin, A.D.

    1987-01-01

    Measurements of the temperature dependence of Raman scattering by optical phonons between temperatures 5 K and 293 K in the II-VI semiconductor ZnTe are reported. Typical Raman spectra for ZnTe at different temperatures are shown and values of the measured LO and TO phonon Raman shifts and linewidths are given for T = 5, 77, and 293 K. The measured linewidth of the LO Raman line as a function of temperature is plotted and compared with model predictions based on various three- and four-phonon processes

  19. Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576 (Singapore); Soh, Chew Beng [Singapore Institute of Technology, 10 Dover Drive, Singapore 138683 (Singapore); Liu, Hongfei [Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis # 08-03, Singapore 138634 (Singapore)

    2015-11-15

    The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holes resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.

  20. Quickest single-step one pot mechanosynthesis and characterization of ZnTe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Patra, S. [Dept of Physics, University of Burdwan, Golapbag, Burdwan, West Bengal 713104 (India); Pradhan, S.K., E-mail: skp_bu@yahoo.com [Dept of Physics, University of Burdwan, Golapbag, Burdwan, West Bengal 713104 (India)

    2011-05-05

    Research highlights: > First time quickest mechanosynthesis of ZnTe QDs starting from Zn and Te powders. > Cubic ZnTe are formed in a single pot at RT in a single step within 1 h of milling. > The existence of stacking faults and twin faults are evident from HRTEM images. > Distinct blue shift has been observed in UV-vis absorption spectra. > First time report that ZnTe QDs with faults can also show the quantum size effect. - Abstract: ZnTe quantum dots (QDs) are synthesized at room temperature in a single step by mechanical alloying the stoichiometric equimolar mixture (1:1 mol) of Zn and Te powders under Ar within 1 h of milling. Both XRD and HRTEM characterizations reveal that these QDs having size {approx}5 nm contain stacking faults of different kinds. A distinct blue-shift in absorption spectra with decreasing particle size of QDs confirms the quantum size confinement effect (QSCE). It is observed for first time that the QDs with considerable amount of faults can also show the QSCE. Optical band gaps of these QDs increase with increasing milling time and their band gaps can be fine-tuned easily by varying milling time of QDs.

  1. Impurity identification and characterization by electrical optical and nuclear methods. The ZnTe: Au case

    International Nuclear Information System (INIS)

    Magnea, N.; Pautrat, J.L.; Saminadayar, K.; Martin, P.; Bontemps, A.

    1979-01-01

    Gold is characterized in pure ZnTe by capacitance, luminescence and infra-red absorption experiments. The position of gold in the lattice is analysed by channeling of charged particles. We show that gold is principally introduced in substitutional position (Ausub(Zn)) and give a simple acceptor level at Esub(V) + 272 meV

  2. Effect of anneal and quench on the nature of the dominant acceptors in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.; Magnea, N.; Pautrat, J.L.; Pfister, J.C.; Revoil, L.

    1978-01-01

    Anneal and quench studies on high purity ZnTe have shown the dominant role of impurities and their solubilities as functions of stoichiometrical conditions. The role of 'b' acceptor, related to lithium, 'g' acceptor, related to silver, and 'a' acceptor of unknown nature is reported

  3. Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

    Science.gov (United States)

    Flores, Mauricio A.

    2018-01-01

    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

  4. InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets

    Energy Technology Data Exchange (ETDEWEB)

    Florescu, D.I.; Ting, S.M.; Merai, V.N.; Parekh, A.; Lee, D.S.; Armour, E.A.; Quinn, W.E. [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States)

    2006-06-15

    This study exemplifies the use of TappingMode trademark atomic force microscopy (AFM) surface morphology imaging to investigate and optimise the metalorganic chemical vapour deposition (MOCVD) growth conditions and post-growth stability of thin (<40 Aa) InGaN layers with direct implications to the structural and optical properties of blue (460 nm) and green (520 nm) LEDs. InGaN epilayers less than 40 Aa thick of {proportional_to}20% solid phase indium were produced on thick (3-4 {mu}m) 2{sup ''} GaN templates grown on (0001) c-plane sapphire substrates. The morphological evolution of the InGaN material was studied utilising a DI3100 AFM tool. Surface morphology and its correlation with photoluminescence and X-ray diffraction results are discussed for every set of conditions employed. More specifically, the post-growth ambient exposure and thermal stability of the uncapped InGaN epilayers were investigated. In addition, the initial stage of subsequent GaN growth, which is an essential step towards the manufacture of LED active regions, was examined. Based on the above findings, a flexible MOCVD growth parameter space and improved LED constituent layer sequencing techniques have been established leading to more efficient and stable LED devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Low Temperature (180°C Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Teng-Hsiang Chang

    2014-01-01

    Full Text Available This paper describes a new method to grow thin germanium (Ge epilayers (40 nm on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD process. The full width at half maximum (FWHM of the Ge (004 in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

  6. Photoluminescence studies of cubic phase GaN grown by molecular beam epitaxy on (001) silicon covered with SiC layer

    International Nuclear Information System (INIS)

    Godlewski, M.; Ivanov, V.Yu.; Bergman, J.P.; Monemar, B.; Barski, A.; Langer, R.

    1997-01-01

    In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by new process. Prior to the growth Si substrate was annealed at 1300-1400 o C in propane. The so-prepared substrate is covered within a thin (∼ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers. (author)

  7. Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

    CERN Document Server

    Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

    2000-01-01

    Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

  8. X-ray diffraction, Raman, and photoacoustic studies of ZnTe nanocrystals

    Science.gov (United States)

    Ersching, K.; Campos, C. E. M.; de Lima, J. C.; Grandi, T. A.; Souza, S. M.; da Silva, D. L.; Pizani, P. S.

    2009-06-01

    Nanocrystalline ZnTe was prepared by mechanical alloying. X-ray diffraction (XRD), energy dispersive spectroscopy, Raman spectroscopy, and photoacoustic absorption spectroscopy techniques were used to study the structural, chemical, optical, and thermal properties of the as-milled powder. An annealing of the mechanical alloyed sample at 590 °C for 6 h was done to investigate the optical properties in a defect-free sample (close to bulk form). The main crystalline phase formed was the zinc-blende ZnTe, but residual trigonal tellurium and hexagonal ZnO phases were also observed for both as-milled and annealed samples. The structural parameters, phase fractions, average crystallite sizes, and microstrains of all crystalline phases were obtained from Rietveld analyses of the X-ray patterns. Raman results corroborate the XRD results, showing the longitudinal optical phonons of ZnTe (even at third order) and those modes of trigonal Te. Nonradiative surface recombination and thermal bending heat transfer mechanisms were proposed from photoacoustic analysis. An increase in effective thermal diffusivity coefficient was observed after annealing and the carrier diffusion coefficient, the surface recombination velocity, and the recombination time parameters remained the same.

  9. Identification of Zn vacancies in ZnTe doped with Cl and I

    Science.gov (United States)

    Asoka-Kumar, Palakkal; Alatalo, Matti; Wang, Wen

    1997-03-01

    The doping difficulties of II-VI semiconductors are well known. For example, ZnTe can be doped easily to have p-type conductivity but not n-type. We examined Cl and I doped ZnTe using positron annihilation spectroscopy to understand the role of vacancies in the compensation mechanism. The annihilation line shapes from inner-shell electrons can be used for elemental identification[1]. Results from ZnTe:Cl and ZnTe:I show an enhancement of annihilations with Te electrons compared to undoped samples, and is explained as arising due to first neighbor of a Zn vacancy. Theoretical calculations of the annihilation line shapes from bulk ZnTe and Zn and Te vacancies will also be presented. This work was supported in part by the US DOE under contract No. DE-AC02-76CH00016. [1] P. Asoka-Kumar, M. Alatalo, V.J. Ghosh, A.C. Kruseman, B. Nielsen, and K.G. Lynn, Phys. Rev. Lett. Vol. 77, 2097 (1996).

  10. Excitation mechanisms of Er optical centers in GaN epilayers

    International Nuclear Information System (INIS)

    George, D. K.; Hawkins, M. D.; McLaren, M.; Vinh, N. Q.; Jiang, H. X.; Lin, J. Y.; Zavada, J. M.

    2015-01-01

    We report direct evidence of two mechanisms responsible for the excitation of optically active Er 3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 μm from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much higher excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 μm from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature

  11. Large-k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes

    Science.gov (United States)

    Vinattieri, Anna; Bogani, Franco; Cavigli, Lucia; Manzi, Donatella; Gurioli, Massimo; Feltin, Eric; Carlin, Jean-François; Martin, Denis; Butté, Raphaël; Grandjean, Nicolas

    2013-02-01

    We present a detailed investigation performed at low temperature (T<50 K) concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focusing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of longitudinal-optical-phonon replicas is used to address the energy relaxation in the excitonic band. From picosecond time-resolved spectra, we bring evidence for a long lasting nonthermal excitonic distribution, which accounts for the first 50 ps. Such a behavior is confirmed in different experimental conditions when both nonresonant and resonant excitations are used. At low excitation power density, the exciton formation and their subsequent thermalization are dominated by impurity scattering rather than by acoustic phonon scattering. The estimate of the average energy of the excitons as a function of delay after the excitation pulse provides information on the relaxation time, which describes the evolution of the exciton population to the thermal regime.

  12. Electrical properties of Ga ion beam implanted GaAs epilayer

    International Nuclear Information System (INIS)

    Hirayama, Yoshiro; Okamoto, Hiroshi

    1985-01-01

    Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n + and p + GaAs epilayers. For originally n + epilayers, this resistivity enhancement is maintained after annealing as high as 800 deg C. However this enhancement disappears after annealing at above 650 deg C for p + epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements. (author)

  13. Electrochemically decorated ZnTe nanodots on single-walled carbon nanotubes for room-temperature NO2 sensor application.

    Science.gov (United States)

    Kim, Donguk; Park, Ki-Moon; Shanmugam, Rajakumar; Yoo, Bongyoung

    2014-11-01

    A gas sensor with ZnTe nanodot-modified single-walled carbon nanotubes (SWCNTs) is demonstrated for NO2 detection at room temperature. ZnTe nanodots are electrochemically deposited in an aqueous solution containing ZnSO4, TeO2 and citrate. A deposition potential range of ZnTe formation of -0.65 to -0.9 V is determined by cyclic voltammetry, and an intermetallic ZnTe compound is formed at above 50 degrees C bath. SWCNT-based sensors show the highly sensitive response down to 1 ppm NO2 gas at room temperature. In particular, the sensitivity of ZnTe nanodot-modified SWCNTs is increased by 6 times as compared to that of pristine SWCNT sensors. A selectivity test of SWCNT-ZnTe nanodots sensors is carried out with ammonia gas (NH3) and methanol vapor (MeOH), and the result confirms an excellent selectivity to NO2 gas.

  14. Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

    Science.gov (United States)

    Imura, Masataka; Tsuda, Shunsuke; Takeda, Hiroyuki; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

    2018-03-01

    The surface and bulk electronic structures of In0.7Ga0.3N epilayers are investigated by angle-resolved hard X-ray photoelectron spectroscopy (HX-PES) combined with soft X-PES. The unintentionally and Mg-doped In0.7Ga0.3N (u-In0.7Ga0.3N and In0.7Ga0.3N:Mg, respectively) epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. Here three samples with different Mg concentrations ([Mg] = 0, 7 × 1019, and 4 × 1020 cm-3) are chosen for comparison. It is found that a large downward energy band bending exists in all samples due to the formation of a surface electron accumulation (SEA) layer. For u-In0.7Ga0.3N epilayer, band bending as large as 0.8 ± 0.05 eV occurs from bulk to surface. Judged from the valence band spectral edge and numerical analysis of energy band with a surface quantum well, the valence band maximum (VBM) with respect to Fermi energy (EF) level in the bulk is determined to be 1.22 ± 0.05 eV. In contrast, for In0.7Ga0.3N:Mg epilayers, the band bending increases and the VBM only in the bulk tends to shift toward the EF level owing to the Mg acceptor doping. Hence, the energy band is considered to exhibit a downward bending structure due to the coexistence of the n+ SEA layer and Mg-doped p layer formed in the bulk. When [Mg] changes from 7 × 1019 to 4 × 1020 cm-3, the peak split occurs in HX-PES spectra under the bulk sensitive condition. This result indicates that the energy band forms an anomalous downward bending structure with a singular point due to the generation of a thin depleted region at the n+ p interface. For In0.7Ga0.3N:Mg epilayers, the VBM in the bulk is assumed to be slightly lower than EF level within 0.1 eV.

  15. Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

    2016-02-28

    Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

  16. Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.

    Science.gov (United States)

    Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean-François; Lu, Yong Feng

    2017-06-28

    In this study, we successfully developed a carbon dioxide (CO 2 )-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al 2 O 3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W -1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

  17. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian; Kosel, Jü rgen

    2013-01-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment

  18. The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

    Science.gov (United States)

    Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

    2018-02-01

    Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

  19. Numerical study of the influence of ZnTe thickness on CdS/ZnTe solar cell performance

    Science.gov (United States)

    Skhouni, Othmane; El Manouni, Ahmed; Mari, Bernabe; Ullah, Hanif

    2016-05-01

    At present most of II-VI semiconductor based solar cells use the CdTe material as an absorber film. The simulation of its performance is realized by means of various numerical modelling programs. We have modelled a solar cell based on zinc telluride (ZnTe) thin film as absorber in substitution to the CdTe material, which contains the cadmium element known by its toxicity. The performance of such photovoltaic device has been numerically simulated and the thickness of the absorber layer has been optimized to give the optimal conversion efficiency. A photovoltaic device consisting of a ZnTe layer as absorber, CdS as the buffer layer and ZnO as a window layer was modelled through Solar Cell Capacitance Simulator Software. Dark and illuminated I-V characteristics and the results for different output parameters of ZnO/CdS/ZnTe solar cell were analyzed. The effect of ZnTe absorber thickness on different main working parameters such as: open-circuit voltage Voc, short-circuit current density Jsc, fill factor FF, photovoltaic conversion efficiency η was intensely studied in order to optimize ZnTe film thickness. This study reveals that increasing the thickness of ZnTe absorber layer results in higher efficiency until a maximum value and then decreases slightly. This maximum was found to be 10% at ZnTe optimum thickness close to 2 µm. Contribution to the topical issue "Materials for Energy Harvesting, Conversion and Storage (ICOME 2015) - Elected submissions", edited by Jean-Michel Nunzi, Rachid Bennacer and Mohammed El Ganaoui

  20. Synthesis and properties of ZnTe and Eu3+ ion co-doped glass nanocomposites

    International Nuclear Information System (INIS)

    Rahaman Molla, Atiar; Tarafder, Anal; Dey, Chirantan; Karmakar, Basudeb

    2014-01-01

    In this study, ZnTe (II-VI) semiconductor and Eu +3 -ion co-doped borosilicate glass has been prepared in the SiO 2 -K 2 O-CaO-BaO-B 2 O 3 glass system followed by controlled heat-treatment to produce glass nanocomposites. Glass transition temperature and crystallization peak temperature have been evaluated using DSC analysis. Dilatometric studies were carried out to evaluate thermal expansion co-efficient, glass transition temperature, and dilatometric softening temperature and found to be 10.7 × 10 −6 /K, 580° C and 628° C, respectively. TEM micrographs demonstrate formation of nano sized crystallites of less than 50 nm. The ZnTe crystal formation also established through selected area electron diffraction (SAED) analysis and high resolution images obtained through TEM studies. With increasing heat treatment time, optical transmission cut-off wavelength (λ cut-off ) shifted towards higher wavelength. Excitation spectra were recorded by monitoring emission at 613 nm corresponding to the 5 D 0 → 7 F 2 transition. An intense 394 nm excitation band corresponding to the 7 F 0 → 5 L 6 transition was observed. Emission spectra were then recorded by exciting the glass samples at 394 nm. When the glass is heat-treated for 30 min at 610° C, a 6-fold increase in the intensity of the red emission at 612 nm has been observed, which is attributed to the segregation of Eu 3+ ions into the low phonon energy ZnTe crystallites and as the size of the nanocrystals is smaller than the size of the exciton, quantum confinement effect is visible. Further increase in heat-treatment duration led to decrease in luminescence intensity due to the growth of larger size crystals. 5 D 1 → 7 F 0 transition is visible only in the samples heat-treated for 30 min and 1 h, which is a characteristic of presence of Eu 3+ ions in the low phonon energy ZnTe crystal sites. The micro hardness of the precursor glass and glass nanocomposites was evaluated; base glass shows

  1. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Dimitrakopulos, G.P.; Bazioti, C.; Grym, Jan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Pacherová, Oliva; Komninou, Ph.

    2014-01-01

    Roč. 306, Jul (2014), s. 89-93 ISSN 0169-4332 R&D Projects: GA MŠk 7AMB12GR034 Institutional support: RVO:68378271 ; RVO:67985882 Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  2. Isotopic substitution of boron and carbon in superconducting diamond epilayers grown by MPCVD

    Czech Academy of Sciences Publication Activity Database

    Achatz, P.; Omnès, F.; Ortega, L.; Marcenat, C.; Vacík, Jiří; Hnatowicz, Vladimír; Koster, U.; Jomard, F.; Bustarret, E.

    2010-01-01

    Roč. 19, č. 7 (2010), s. 814-817 ISSN 0925-9635 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505 Keywords : Isotopic effects * Vibrational properties * p-type doping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.825, year: 2010

  3. Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Dimakis, E.; Domagala, J.; Iliopoulos, E.; Adikimenakis, A.; Georgakilas, A.

    2007-01-01

    The in-plane lattice parameters of InN, GaN and Al 2 O 3 in a InN/GaN/Al 2 O 3 (0001) heterostructure have been measured as a function of temperature in the range of 25-350 C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al 2 O 3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al 2 O 3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Sensing application of an optical fiber dip coated with L-Cystein ethyl ester hydrochloride capped ZnTe quantum dots

    Directory of Open Access Journals (Sweden)

    Sundaray Madhulita

    2016-09-01

    Full Text Available Optical fiber in conjunction with ZnTe quantum dots (QDs is investigated for sensing application. ZnTe QDs, are synthesized by a simple chemical bottom up approach. Quantum dots are capped with L-Cystein ethyl ester hydrochloride (LEEH, to increase their stability. Then LEEH capped ZnTe QDs, whose size is estimated as 2.29 nm by effective mass approximation (EMA, are dip-coated on a cladding removed optical fiber. Different concentrations of alcohol and ammonia are used to investigate the sensing behavior. It is found that sensitivity of the sensor increases with the use of QDs for both alcohol and ammonia.

  5. Guided Growth of Horizontal p-Type ZnTe Nanowires

    Science.gov (United States)

    2016-01-01

    A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

  6. ZnTe Semiconductor-Polymer Gel Composited Electrolyte for Conversion of Solar Energy

    Directory of Open Access Journals (Sweden)

    Wonchai Promnopas

    2014-01-01

    Full Text Available Nanostructured cubic p-type ZnTe for dye sensitized solar cells (DSSCs was synthesized from 1 : 1 molar ratio of Zn : Te by 600 W and 900 W microwave plasma for 30 min. In this research, their green emissions were detected at the same wavelengths of 563 nm, the energy gap (Eg at 2.24 eV, and three Raman shifts at 205, 410, and 620 cm−1. The nanocomposited electrolyte of quasisolid state ZnO-DSSCs was in correlation with the increase in the JSC, VOC, fill factor (ff, and efficiency (η by increasing the wt% of ZnTe-GPE (gel polymer electrolyte to an optimum value and decreased afterwards. The optimal ZnO-DSSC performance was achieved for 0.20 wt% ZnTe-GPE with the highest photoelectronic energy conversion efficiency at 174.7% with respect to that of the GPE without doping of p-type ZnTe.

  7. Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Kühnelt, M.; Langbein, Wolfgang Werner

    1998-01-01

    We have measured the absolute values of the second-harmonic generation (SHG) coefficient \\d\\ for the zinc-blende II-VI semiconductors ZnTe, ZnSe, and ZnS at room temperature. The investigated spectral region of the fundamental radiation lambda(F) ranges from 520 to 1321 nm using various pulsed...

  8. Structure and strain relaxation effects of defects in InxGa1−xN epilayers

    International Nuclear Information System (INIS)

    Rhode, S. L.; Fu, W. Y.; Massabuau, F. C.-P.; Kappers, M. J.; McAleese, C.; Oehler, F.; Humphreys, C. J.; Sahonta, S.-L.; Moram, M. A.; Dusane, R. O.

    2014-01-01

    The formation of trench defects is observed in 160 nm-thick In x Ga 1−x N epilayers with x ≤ 0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I 1 -type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.

  9. Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Koida, T. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Uedono, A. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Sota, T. [Department of Electrical, Engineering and Bioscience, Waseda University, Shinjuku 169-8555 (Japan); Kawasaki, M. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044 (Japan); Chichibu, S.F. [NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Photodynamics Research Center, RIKEN, Sendai 980-0868 (Japan)

    2004-09-01

    The roles of point defects and defect complexes governing nonradiative processes in ZnO epilayers were studied using time-resolved photoluminescence (PL) and slow positron annihilation measurements. The density or size of Zn vacancies (V{sub Zn}) decreased and the nonradiative PL lifetime ({tau}{sub nr}) increased with higher growth temperature for epilayers grown on a ScAlMgO{sub 4} substrate. Accordingly, the steady-state free excitonic PL intensity increased with increase in {tau}{sub nr} at room temperature. The use of a homoepitaxial substrate further decreased the V{sub Zn} concentration. However, no perfect relation between {tau}{sub nr} and the density or size of V{sub Zn} or other positron scattering centers was found. The results indicated that nonradiative recombination processes are governed not solely by single point defects, but by certain defect species introduced by the presence of V{sub Zn} such as vacancy complexes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Polymorphic one-dimensional (N2H4)2ZnTe: soluble precursors for the formation of hexagonal or cubic zinc telluride.

    Science.gov (United States)

    Mitzi, David B

    2005-10-03

    Two hydrazine zinc(II) telluride polymorphs, (N2H4)2ZnTe, have been isolated, using ambient-temperature solution-based techniques, and the crystal structures determined: alpha-(N2H4)2ZnTe (1) [P21, a = 7.2157(4) Angstroms, b = 11.5439(6) Angstroms, c = 7.3909(4) Angstroms, beta = 101.296(1) degrees, Z = 4] and beta-(N2H4)2ZnTe (2) [Pn, a = 8.1301(5) Angstroms, b = 6.9580(5) Angstroms, c = 10.7380(7) Angstroms, beta = 91.703(1) degrees, Z = 4]. The zinc atoms in 1 and 2 are tetrahedrally bonded to two terminal hydrazine molecules and two bridging tellurium atoms, leading to the formation of extended one-dimensional (1-D) zinc telluride chains, with different chain conformations and packings distinguishing the two polymorphs. Thermal decomposition of (N2H4)2ZnTe first yields crystalline wurtzite (hexagonal) ZnTe at temperatures as low as 200 degrees C, followed by the more stable zinc blende (cubic) form at temperatures above 350 degrees C. The 1-D polymorphs are soluble in hydrazine and can be used as convenient precursors for the low-temperature solution processing of p-type ZnTe semiconducting films.

  11. Low threshold for optical damage in AlGaN epilayers and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2013-11-28

    Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

  12. Phase transitions in ZnTe co-doped with Mg and oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Elyukhin, V.A.; Sorokina, L.P. [Departamento de Ingenieria Electrica, CINVESTAV-IPN, Av. IPN 2508, Mexico, D.F., 07360 (Mexico); Rodriguez de Santiago, M. [Departamento de Ingenieria Quimica Petrolera, IPN, Edif. 8, Mexico, D.F., 07738 (Mexico)

    2007-05-15

    Self-assembling of 1O4Mg tetrahedral clusters in ZnTe isoelectronically co-doped with Mg and oxygen in the ultra dilute oxygen impurity limit is described by a phase diagram. The occurrence of 1O4Mg clusters is a result of the second-order transition. The final stage of self-assembling when all oxygen impurities are in 1O4Mg clusters has to be reached also as a result of the second-order transition at the temperature close to the temperature of the occurrence of these clusters. The conditions of these phase transitions are obtained. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Excitation and recombination of donor-acceptor pairs in ZnTe

    International Nuclear Information System (INIS)

    Nakashima, S.; Yasuda, S.

    1979-01-01

    The photoluminescence spectra and its excitation spectra of the donor-acceptor pairs are observed in ZnTe crystals doped with Li and As in the region below the bandgap energy. The relaxation of electrons and holes into the first excited state of d-a pairs is studied for the three excitation processes: (1) bound-to-bound transitions, (2) bound-to-free transitions, and (3) free-to-free transitions. It is concluded that most of the electrons and holes at the excited states of each impurity level are relaxed rapidly into their ground states before the occurrence of the recombination involving the excited states. For the excitation process (2), conduction electrons are preferentially trapped by positively charged pairs. The redistribution of bound holes by hopping is suggested to explain the broad d-a emission band observed for the bound-to-free excitation for very distant pairs. (author)

  14. Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

    KAUST Repository

    Boutaiba, F.; Belabbes, Abderrezak; Ferhat, M.; Bechstedt, F.

    2014-01-01

    We report results of first-principles calculations based on the projector augmented wave (PAW) method to explore the structural, thermodynamic, and electronic properties of cubic (3C) and hexagonal (6H, 4H, and 2H) polytypes of II-VI compounds: ZnS, ZnSe, and ZnTe. We find that the different bond stacking in II-VI polytypes remarkably influences the resulting physical properties. Furthermore, the degree of hexagonality is found to be useful to understand both the ground-state properties and the electronic structure of these compounds. The resulting lattice parameters, energetic stability, and characteristic band energies are in good agreement with available experimental data. Trends with hexagonality of the polytype are investigated.

  15. Polytypism in ZnS, ZnSe, and ZnTe: First-principles study

    KAUST Repository

    Boutaiba, F.

    2014-06-23

    We report results of first-principles calculations based on the projector augmented wave (PAW) method to explore the structural, thermodynamic, and electronic properties of cubic (3C) and hexagonal (6H, 4H, and 2H) polytypes of II-VI compounds: ZnS, ZnSe, and ZnTe. We find that the different bond stacking in II-VI polytypes remarkably influences the resulting physical properties. Furthermore, the degree of hexagonality is found to be useful to understand both the ground-state properties and the electronic structure of these compounds. The resulting lattice parameters, energetic stability, and characteristic band energies are in good agreement with available experimental data. Trends with hexagonality of the polytype are investigated.

  16. InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets

    International Nuclear Information System (INIS)

    Florescu, D.I.; Ting, S.M.; Merai, V.N.; Parekh, A.; Lee, D.S.; Armour, E.A.; Quinn, W.E.

    2006-01-01

    This study exemplifies the use of TappingMode trademark atomic force microscopy (AFM) surface morphology imaging to investigate and optimise the metalorganic chemical vapour deposition (MOCVD) growth conditions and post-growth stability of thin ( '' GaN templates grown on (0001) c-plane sapphire substrates. The morphological evolution of the InGaN material was studied utilising a DI3100 AFM tool. Surface morphology and its correlation with photoluminescence and X-ray diffraction results are discussed for every set of conditions employed. More specifically, the post-growth ambient exposure and thermal stability of the uncapped InGaN epilayers were investigated. In addition, the initial stage of subsequent GaN growth, which is an essential step towards the manufacture of LED active regions, was examined. Based on the above findings, a flexible MOCVD growth parameter space and improved LED constituent layer sequencing techniques have been established leading to more efficient and stable LED devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Investigation of dislocations in 8° off-axis 4H-SiC epilayer

    International Nuclear Information System (INIS)

    Rui-Xia, Miao; Yu-Ming, Zhang; Yi-Men, Zhang; Xiao-Yan, Tang; Qing-Feng, Gai

    2010-01-01

    This paper reports that the etching morphology of dislocations in 8° off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer. (condensed matter: structure, thermal and mechanical properties)

  18. Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

    CERN Document Server

    Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

    2000-01-01

    Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

  19. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    International Nuclear Information System (INIS)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo

    2014-01-01

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  20. Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

    Energy Technology Data Exchange (ETDEWEB)

    Ozden, Burcu; Yang, Chungman; Tong, Fei; Khanal, Min P.; Mirkhani, Vahid; Sk, Mobbassar Hassan; Ahyi, Ayayi Claude; Park, Minseo, E-mail: park@physics.auburn.edu [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-10-27

    We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation.

  1. Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

    Science.gov (United States)

    Chi, Hang; Uher, Ctirad

    2014-03-01

    At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

  2. Reciprocal space mapping on Si1x Cx epilayers and Sin/C/Sin superlattices

    International Nuclear Information System (INIS)

    Stangl, J.; Zerlauth, S.; Holy, V.; Faschinger, W.; Bauer, G.

    1997-01-01

    High-resolution X-ray diffraction (XRXRD) and triple-axis diffractometry (TAD) are used to investigate Si 1x C x epilayers and Si n /C/Si n superlattices. The samples were annealed in several steps to obtain information about their thermal stability. During annealing defects are formed in the epitaxial layers as well as in the substrates, leading to a contribution of diffusely scattered intensity around the particular reciprocal lattice points. A comparison of the measured intensity distribution in reciprocal space with model calculations based on a theory by Krivoglaz shows that the defects in the layers are different from those in the substrates, and that the assumption of small spherical defects in the epilayers leads to a quite good agreement between measurement and simulation. The comparison of different samples also shows that the formation of the defects depends on the particular sample structure

  3. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    Science.gov (United States)

    Ayedh, H. M.; Hallén, A.; Svensson, B. G.

    2015-11-01

    The carbon vacancy (VC) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the VC-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (Ci's) and annihilation of VC's in the epi-layer "bulk". Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the VC annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating VC's. Concentrations of VC below ˜2 × 1011 cm-3 can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the VC-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote Ci-clustering and reduce dynamic defect annealing. These Ci-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced Ci injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the VC-concentration, which limit the net effect of the Ci injection, and a competition between the two processes occurs.

  4. AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

    2014-09-01

    Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

  5. Unprecedented Integral-Free Debye Temperature Formulas: Sample Applications to Heat Capacities of ZnSe and ZnTe

    Directory of Open Access Journals (Sweden)

    R. Pässler

    2017-01-01

    Full Text Available Detailed analytical and numerical analyses are performed for combinations of several complementary sets of measured heat capacities, for ZnSe and ZnTe, from the liquid-helium region up to 600 K. The isochoric (harmonic parts of heat capacities, CVh(T, are described within the frame of a properly devised four-oscillator hybrid model. Additional anharmonicity-related terms are included for comprehensive numerical fittings of the isobaric heat capacities, Cp(T. The contributions of Debye and non-Debye type due to the low-energy acoustical phonon sections are represented here for the first time by unprecedented, integral-free formulas. Indications for weak electronic contributions to the cryogenic heat capacities are found for both materials. A novel analytical framework has been constructed for high-accuracy evaluations of Debye function integrals via a couple of integral-free formulas, consisting of Debye’s conventional low-temperature series expansion in combination with an unprecedented high-temperature series representation for reciprocal values of the Debye function. The zero-temperature limits of Debye temperatures have been detected from published low-temperature Cp(T data sets to be significantly lower than previously estimated, namely, 270 (±3 K for ZnSe and 220 (±2 K for ZnTe. The high-temperature limits of the “true” (harmonic lattice Debye temperatures are found to be 317 K for ZnSe and 262 K for ZnTe.

  6. Structure and strain relaxation effects of defects in In{sub x}Ga{sub 1–x}N epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Rhode, S. L., E-mail: sr583@cam.ac.uk; Fu, W. Y.; Massabuau, F. C.-P.; Kappers, M. J.; McAleese, C.; Oehler, F.; Humphreys, C. J.; Sahonta, S.-L. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moram, M. A. [Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Dusane, R. O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2014-09-14

    The formation of trench defects is observed in 160 nm-thick In{sub x}Ga{sub 1–x}N epilayers with x≤0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I₁-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.

  7. Growth and characterization of Ge nanostructures selectively grown on patterned Si

    International Nuclear Information System (INIS)

    Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

    2008-01-01

    By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates

  8. Electrical transport in n-type ZnMgSSe grown by molecular beam epitaxy on GaAs

    International Nuclear Information System (INIS)

    Marshall, T.; Petruzzello, J.A.; Herko, S.P.

    1994-01-01

    Significant progress in improving the Performance of blue-green II-VI semiconductor injection lasers has come about from advances in the epitaxial growth and doping of ZnMgSSe on GaAs substrates. This paper investigates electrical transport and its relation to structural quality in n-type Zn 1-y Mg y S x Se 1-x epilayers doped with Cl, grown by molecular beam epitaxy. The composition parameters x and y vary from about 0.12-0.18 and 0.08-0.15, respectively. The quaternary epilayers studied are lattice-matched (or nearly so) to the GaAs substrate. Temperature-dependent Hall-effect measurements are performed on seven n-type ZnMgSSe:Cl epilayers, and a technique is presented whereby the resulting mobility-vs-temperature data is compared with data for ZnSe to obtain a structural figure of merit that is useful in characterizing the quaternary epilayer. 29 refs., 4 figs

  9. Optical studies of wide bandgap semiconductor epilayers and quantum well structures

    International Nuclear Information System (INIS)

    May, L.

    1998-09-01

    This thesis contains research on the optical properties of wide bandgap semiconductors, which are potentially useful for blue and UV emitters. The research covers materials from both the II-VI and III-V groups. In Chapter 1, a general introduction to the topic of blue and UV emitters is presented. The properties required of materials used for these applications are outlined, and the technological significance of these devices is discussed, in order to place this work into context. In Chapter 2, the main experimental techniques used in this work are outlined. These are photoluminescence spectroscopy (PL), photoluminescence excitation spectroscopy (PLE) and white light reflectivity. Chapter 3 begins with a discussion of the properties of ZnS. Then, following a brief outline of the sample growth technique, the optical studies of a series of ZnS single epitaxial layers are presented. The samples were characterised by photoluminescence spectroscopy, and the effect of strain on their properties studied in some detail. The results of tellurium and nitrogen doping studies are also presented. The chapter concludes with a study of ZnCdS epilayers. Chapter 4 begins with the growth and PL characterisation of a series of ZnS/ZnCdS multiple quantum well structures. Optically pumped stimulated emission experiments were then carried out on selected MQW samples. The results of these experiments are presented in the latter part of Chapter 4, followed by a discussion of the lasing mechanisms in II-VI quantum well structures. In Chapter 5, the growth and characterisation of a series of GaN epilayers are described. After an introduction outlining some of the key properties of GaN, the MOCVD growth procedure is described. Studies of the samples by PL, PLE and reflectivity are then presented. Finally, a study of p-type GaN epilayers is presented, and excimer laser annealing is investigated as a possible means of activating the dopant

  10. Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(lll) Substrate

    International Nuclear Information System (INIS)

    Wei Meng; Wang Xiaoliang; Pan Xu; Xiao Hongling; Wang Cuimei; Zhang Minglan; Wang Zhanguo

    2011-01-01

    This paper investigated the influence of AlGaN buffer growth temperature on strain status and crystal quality of the GaN film on Si(111) sbustrates by metal organic chemical vapor deposition. It was demonstrated by the optical microscopy that AlGaN buffer gorwth temperature had a remarkable effect on compensating tensil stress in top GaN layer and preventing the formation of cracks. X-ray diffraction and atomic force microscopy analysis showed crystal quality and surface morphology of the GaN epilayer could be improved through increasing AlGaN buffer growth temperature. 1μm crack-free GaN epilayer on Si (111) substrates was obtained with graded AlGaN buffer layer at optimized temperature of 1050 deg. C. Transmission electron microscopy analysis revealed that a significant reduction in threading dislocations was achieved in GaN epilayer.

  11. Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

    International Nuclear Information System (INIS)

    Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

    2006-01-01

    We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

  12. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  13. Raman and photo-modulated reflectivity studies of ZnTe/InAs semiconductor heterostructure under hydrostatic pressure

    International Nuclear Information System (INIS)

    Thomas, R.J.; Boley, M.S.; Chandrasekhar, H.R.; Chandrasekhar, M.; Parks, C.; Ramdas, A.K.; Han, J.; Kobayashi, M.; Gunshor, R.L.

    1994-01-01

    The photo--modulated reflectivity spectrum of a biaxially-strained pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular beam epitaxy is studied as a function of applied hydrostatic pressure at 80 K. With increasing hydrostatic compression, the biaxially compressive strain is progressively compensated by the pressure induced tensile strain. At approximately 55 kbars the epilayer becomes strain free, and is under a biaxial tension at higher pressures. The separation between the heavy hole and light hole signatures is superlinear in pressure, suggestive of a pressure dependent shear deformation potential constant for the valence and conduction bands. We also compare the pressure dependence of the Raman LO phonon of the ZnTe epilayer on InAs with that of a bulk ZnTe sample at 13 K. The pressure dependent strain is found to be linear. Accurate values of the first order strain derivatives of the LO-phonons and mode Grueneisen constants are obtained. copyright 1994 American Institute of Physics

  14. Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers

    International Nuclear Information System (INIS)

    Liu, J P; Jin, R Q; Zhang, J C; Wang, J F; Wu, M; Zhu, J J; Zhao, D G; Wang, Y T; Yang, H

    2004-01-01

    AlInGaN quaternary epilayers with varying In mole fraction were investigated using triple-axis x-ray diffraction and photoluminescence measurements. The indium compositional fluctuation is enhanced with increasing In mole fraction, whereas the mosaicity of the AlInGaN epilayers is determined through the GaN template quality. Based on the analysis of the temperature dependence of the PL peak position, it is found that the localization effect strengthens with increasing In mole fraction due to the larger fluctuations of the In distribution. Increasing the influence of the localized state results in increasing the emission intensity and FWHM with the In content

  15. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  16. Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

    Science.gov (United States)

    Chong, Haining; Wang, Zhewei; Chen, Chaonan; Xu, Zemin; Wu, Ke; Wu, Lan; Xu, Bo; Ye, Hui

    2018-04-01

    In order to suppress dislocation generation, we develop a "three-step growth" method to heteroepitaxy low dislocation density germanium (Ge) layers on silicon with the MBE process. The method is composed of 3 growth steps: low temperature (LT) seed layer, LT-HT intermediate layer as well as high temperature (HT) epilayer, successively. Threading dislocation density (TDD) of epitaxial Ge layers is measured as low as 1.4 × 106 cm-2 by optimizing the growth parameters. The results of Raman spectrum showed that the internal strain of heteroepitaxial Ge layers is tensile and homogeneous. During the growth of LT-HT intermediate layer, TDD reduction can be obtained by lowering the temperature ramping rate, and high rate deposition maintains smooth surface morphology in Ge epilayer. A mechanism based on thermodynamics is used to explain the TDD and surface morphological dependence on temperature ramping rate and deposition rate. Furthermore, we demonstrate that the Ge layer obtained can provide an excellent platform for III-V materials integrated on Si.

  17. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    Science.gov (United States)

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  18. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    Energy Technology Data Exchange (ETDEWEB)

    Ayedh, H. M.; Svensson, B. G. [University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Hallén, A. [School of Information and Communication Technology (ICT), Royal Institute of Technology, SE-164 40 Kista-Stockholm (Sweden)

    2015-11-07

    The carbon vacancy (V{sub C}) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the V{sub C}-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (C{sub i}'s) and annihilation of V{sub C}'s in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the V{sub C} annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating V{sub C}'s. Concentrations of V{sub C} below ∼2 × 10{sup 11} cm{sup −3} can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the V{sub C}-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote C{sub i}-clustering and reduce dynamic defect annealing. These C{sub i}-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced C{sub i} injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the V{sub C}-concentration, which limit the net effect of the C{sub i} injection, and a competition between the two processes occurs.

  19. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  20. Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

    Science.gov (United States)

    Colston, Gerard; Myronov, Maksym

    2017-11-01

    Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

  1. Comparison of the ion induced charge collection in Si epilayer and SOI devices

    International Nuclear Information System (INIS)

    Hirao, Toshio; Mori, Hidenobu; Laird, Jamie Stuart; Onoda, Shinobu; Itoh, Hisayoshi

    2003-01-01

    It is known that the single-event phenomena (SEP) are the malfunction of micro electronics devices caused by the impact of an energetic heavy ion. Improving the tolerance of devices to the SEP requires a better understanding of basic charge collection mechanisms on the timescales of the order of picoseconds. In order to better elucidate these mechanisms, we measure the fast transient current resulting from heavy ion strikes with a fast sampling data collection system and a heavy ion microbeam line at JAERI. In this paper we report on differences in both the transient current and charge collection from 15 MeV carbon ions on silicon-on-insulator, Si epilayer and bulk p + n junction diodes and charge transportation under MeV ion injection is discussed

  2. Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid (Spain); Cusco, R.; Domenech-Amador, N.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga (Japan)

    2012-06-15

    The surface acoustic wave velocity in InN has been experimentally determined by means of Brillouin scattering experiments on c - and m -face epilayers. From simulations based on the Green's function formalism we determine the shear elastic constants c{sub 66} and c{sub 44} and propose a complete set of elastic constants for wurtzite InN. The analysis of the sagittal and azimuthal dependence of the surface acoustic wave velocity indicates a slightly different elastic behavior of the m -face sample that basically affects the c{sub 44} elastic constant. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux

    International Nuclear Information System (INIS)

    Han, Y; Fay, M W; Novikov, S V; Edmonds, K W; Gallagher, B L; Campion, R P; Staddon, C R; Foxon, C T; Brown, P D

    2006-01-01

    Zinc-blende Ga 1-x Mn x N epilayers grown by plasma assisted molecular beam epitaxy as a function of Mn flux have been assessed using a variety of structural characterisation techniques. Increasing Mn flux is associated with the build up of a Mn surfactant layer during the early states of growth and a transition from zinc-blende single phase growth to zincblende/ wurtzite mixed phase growth

  4. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Science.gov (United States)

    Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

    2017-11-01

    The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

  5. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Science.gov (United States)

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  6. Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Alderighi, D.; Vinattieri, A.; Colocci, M. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Fisica and LENS, Firenze (Italy); Bogani, F. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Energetica, Firenze (Italy); Gottardo, S. [Dipt. di Fisica and LENS, Firenze (Italy); Grandjean, N.; Massies, J. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications, CNRS, Valbonne (France)

    2001-01-01

    We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at the zero phonon line (ZPL) and at the n = 1 LO replica. Time-resolved spectra unambiguously assign the replica to the free exciton A recombination. Optical migration effects are detected both in the epilayer and the QWs samples and disappear as the temperature increases up to 60-90 K. Even though the sample quality is comparable to state-of-the-art samples, localization effects dominate the exciton dynamics at low temperature in the studied GaN based structures. (orig.)

  7. Optical and electrical properties of heterostructures Zn{sub 1-x}Mg{sub x}Se crystallized on ZnTe and GaAs crystals by MBE method; Wlasnosci optyczne i elektryczne heterostruktur Zn{sub 1-x}Mg{sub x}Se krystalizowanych metoda MBE w krysztalach ZnTe i GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gapinski, A; Glowacki, G; Bala, W [Uniwersytet Mikolaja Kopernika, Torun (Poland). Inst. Fizyki

    1997-12-01

    Triple component mixing crystals Zn{sub 1-x}Mg{sub x}Se have been crystallized on ZnTe and GaAs monocrystals by means of molecular beam epitaxy method. The optical and electrical properties of such structures with different magnesium content have been studied. The applicability for optoelectronial and light-pipe use have been discussed as well. 6 refs, 4 figs.

  8. Epitaxially grown polycrystalline silicon thin-film solar cells on solid-phase crystallised seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Wei, E-mail: weili.unsw@gmail.com; Varlamov, Sergey; Xue, Chaowei

    2014-09-30

    Highlights: • Crystallisation kinetic is used to analyse seed layer surface cleanliness. • Simplified RCA cleaning for the seed layer can shorten the epitaxy annealing duration. • RTA for the seed layer can improve the quality for both seed layer and epi-layer. • Epitaxial poly-Si solar cell performance is improved by RTA treated seed layer. - Abstract: This paper presents the fabrication of poly-Si thin film solar cells on glass substrates using seed layer approach. The solid-phase crystallised P-doped seed layer is not only used as the crystalline template for the epitaxial growth but also as the emitter for the solar cell structure. This paper investigates two important factors, surface cleaning and intragrain defects elimination for the seed layer, which can greatly influence the epitaxial grown solar cell performance. Shorter incubation and crystallisation time is observed using a simplified RCA cleaning than the other two wet chemical cleaning methods, indicating a cleaner seed layer surface is achieved. Cross sectional transmission microscope images confirm a crystallographic transferal of information from the simplified RCA cleaned seed layer into the epi-layer. RTA for the SPC seed layer can effectively eliminate the intragrain defects in the seed layer and improve structural quality of both of the seed layer and the epi-layer. Consequently, epitaxial grown poly-Si solar cell on the RTA treated seed layer shows better solar cell efficiency, V{sub oc} and J{sub sc} than the one on the seed layer without RTA treatment.

  9. Geometric factors in the magnetoresistance of n-doped InAs epilayers

    KAUST Repository

    Sun, Jian

    2013-11-27

    We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler\\'s rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler\\'s rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.

  10. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

    International Nuclear Information System (INIS)

    Guillén-Cervantes, A.; Rivera-Álvarez, Z.; López-López, M.; Ponce-Pedraza, A.; Guarneros, C.; Sánchez-Reséndiz, V.M.

    2011-01-01

    GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

  11. Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

    Energy Technology Data Exchange (ETDEWEB)

    Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

    2004-06-01

    Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

  12. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  13. P-N junction solar cell grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hazrati Fard, M.

    2001-01-01

    Growth of GaAs epilayers by Molecular Beam Epitaxy was accomplished for the first time in Iran. The layers were grown on GaAs (001) substrates (p+ wafer) with Si impurity for p n junction solar cell fabrication at a rate of nearly one micron per hour and 0.25 micron per quarter. Crystalline quality of grown layers had been monitored during growth by Reflection High Energy Electron Diffraction system. Doping profile and layer thickness was assessed by electrochemical C-V profiling method. Then Hall measurements were conducted on small samples both in room temperature and liquid nitrogen temperature so giving average carrier concentration and compensation ratio. The results as like: V oc , I sc , F F, η were comparable with other laboratory reports. information for obtaining good and repeatable growths was collected. Therefore, the conditions of repeatable quality growth p n junction solar cells onto GaAs (001) substrates were determined

  14. Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

    International Nuclear Information System (INIS)

    Lee, Hong Seok; Rastelli, Armando; Schmidt, Oliver G.; Kim, Tae Whan; Lee, In Won

    2011-01-01

    Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO 2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ-PL peak shift for the 200-nm SiO 2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO 2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO 2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

  15. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  16. Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Chen, Chang-Wei; Dai, Zi-Yuan; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Yuan, Chi-Tsu; Shen, Ji-Lin

    2014-01-01

    Highlights: • CdTe(1 1 1)A epilayers were grown on Si(1 1 1) substrates by molecular beam epitaxy. • We report an enhanced growth using Mn atoms. • The significant improvements in surface quality and optical properties were found. - Abstract: This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe(1 1 1)A epilayer on Si(1 1 1) substrates using Mn atoms. The reflection high-energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe(1 1 1)A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe(1 1 1)A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect-related emissions and considerably increased the integral intensity of exciton-related emissions by a large factor of about 400

  17. Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine

    Energy Technology Data Exchange (ETDEWEB)

    Hommel, D.; Scholl, S.; Kuhn, T.A.; Ossau, W.; Waag, A.; Landwehr, G. (Univ. Wuerzburg, Physikalisches Inst. (Germany)); Bilger, G. (Univ. Stuttgart, Inst. fuer Physikalische Elektronik (Germany))

    1993-01-30

    Chlorine has been used successfully for the first time for n-type doping of CdTe epitaxial layers (epilayers) grown by photo-assisted molecular beam epitaxy. Similar to n-type doping of ZnSe layers, ZnCl[sub 2] has been used as source material. The free-carrier concentration can be varied over more than three orders of magnitude by changing the ZnCl[sub 2] oven temperature. Peak mobilities are 4700 cm[sup 2] V[sup -1] s[sup -1] for an electron concentration of 2x10[sup 16] cm[sup -3] and 525 cm[sup 2] V[sup -1] s[sup -1] for 2x10[sup 18] cm[sup -3]. The electrical transport data obtained by Van der Pauw configuration and Hall structure measurements are consistent with each other, indicating a good uniformity of the epilayers. In photoluminescence the donor-bound-exciton emission dominates for all chlorine concentrations. This contasts significantly with results obtained for indium doping, commonly used for obtaining n-type CdTe epilayers. The superiority of chlorine over indium doping and the influence of growth parameters on the behaviour of CdTe:Cl layers will be discussed on the basis of transport, luminescence, secondary ion mass spectroscopy and X-ray photoelectron spectroscopy data. (orig.).

  18. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang; Li, Guoqiang

    2014-01-01

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In x Ga 1−x As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In x Ga 1−x As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In x Ga 1−x As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In x Ga 1−x As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In x Ga 1−x As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In x Ga 1−x As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates

  19. Raman and infrared spectroscopic investigations of a ferroelastic phase transition in B a2ZnTe O6 double perovskite

    Science.gov (United States)

    Moreira, Roberto L.; Lobo, Ricardo P. S. M.; Ramos, Sérgio L. L. M.; Sebastian, Mailadil T.; Matinaga, Franklin M.; Righi, Ariete; Dias, Anderson

    2018-05-01

    The low-temperature vibrational properties of B a2ZnTe O6 double-perovskite ceramics obtained by the solid-state route were investigated by Raman scattering and Fourier-transform infrared reflectivity. We found that this material undergoes a reversible ferroelastic phase transition at around 140 K, well compatible with a recently proposed rhombohedral-to-monoclinic structural change that would occur below 165 K. Complementary calorimetric measurements showed that the phase transition has a first-order character, with an entropy jump compatible with a displacive mechanism. The vibrational spectra show clearly the splitting of the doubly degenerate E modes into nondegenerate representations of the low-symmetry phase. In particular, the lowest-frequency Raman mode presents soft-mode behavior and splits below the critical temperature, confirming the in-plane ferroelastic deformation in the low-temperature phase.

  20. Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe

    Directory of Open Access Journals (Sweden)

    Bouhafs B.

    2012-06-01

    Full Text Available The band structure of semiconductors was described by several theorists since the Fifties. The main objective of the present paper is to do a comparative study between various families of semi-conductors IV (Si,Ge, III-V (GaAs, GaP and II-VI (ZnSe, ZnTe with both methods; tight Binding1 method and pseudo potential method2. This work enables us to understand as well as the mechanism of conduction process in these semiconductors and powers and limits of the above methods. The obtained results allow to conclude that both methods are in a good agreement to describe the morphology of band structures of the cited semiconductors. This encourages us to study in the future the electronic behaviour through the structure of bands for more complex systems such as the heterostructures.

  1. Jahn-Teller coupling of Cr2+ ion with degenerate modes in ZnS, ZnSe, and ZnTe crystals: microscopic treatment

    International Nuclear Information System (INIS)

    Natadze, A.L.; Ryskin, A.I.

    1980-01-01

    The Jahn-Teller (JT) interaction energy is calculated for 5 T 2 and 5 E states of the Cr 2+ ion in ZnS, ZnSe, and ZnTe crystals. The calculations are made within the framework of a particular microscopic model of the crystal field in the distorted crystal (model of point-like exchange charges), the multimode interaction is taken into account. For the 5 T 2 term the energies of interaction with tetragonal and trigonal modes are of the same order of magnitude. This circumstance results in a small height of the barriers that separate various minima of the adiabatic potential and is responsible for the dynamic aspect of the static JT effect in these systems. (author)

  2. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

    Science.gov (United States)

    Renteria, E. J.; Muniz, A. J.; Addamane, S. J.; Shima, D. M.; Hains, C. P.; Balakrishnan, G.

    2015-05-01

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2- μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

  3. Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

    Science.gov (United States)

    Cavigli, Lucia; Gabrieli, Riccardo; Gurioli, Massimo; Bogani, Franco; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas; Vinattieri, Anna

    2010-09-01

    A detailed experimental investigation of the phonon-assisted emission in a high-quality c -plane GaN epilayer is presented up to 200 K. By performing photoluminescence and reflectivity measurements, we find important etaloning effects in the phonon-replica spectra, which have to be corrected before addressing the lineshape analysis. Direct experimental evidence for free exciton thermalization is found for the whole temperature range investigated. A close comparison with existing models for phonon replicas originating from a thermalized free exciton distribution shows that the simplified and commonly adopted description of the exciton-phonon interaction with a single excitonic band leads to a large discrepancy with experimental data. Only the consideration of the complex nature of the excitonic band in GaN, including A and B exciton contributions, allows accounting for the temperature dependence of the peak energy, intensity, and lineshape of the phonon replicas.

  4. Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy

    Science.gov (United States)

    Sasaki, Kohei; Thieu, Quang Tu; Wakimoto, Daiki; Koishikawa, Yuki; Kuramata, Akito; Yamakoshi, Shigenobu

    2017-12-01

    We developed depletion-mode vertical Ga2O3 trench metal-oxide-semiconductor field-effect transistors by using n+ contact and n- drift layers. These epilayers were grown on an n+ (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy. Cu and HfO2 were used for the gate metal and dielectric film, respectively. The mesa width and gate length were approximately 2 and 1 µm, respectively. The devices showed good DC characteristics, with a specific on-resistance of 3.7 mΩ cm2 and clear current modulation. An on-off ratio of approximately 103 was obtained.

  5. Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate

    Science.gov (United States)

    Chichibu, S. F.; Shima, K.; Kojima, K.; Takashima, S.; Edo, M.; Ueno, K.; Ishibashi, S.; Uedono, A.

    2018-05-01

    Complementary time-resolved photoluminescence and positron annihilation measurements were carried out at room temperature on Mg-doped p-type GaN homoepitaxial films for identifying the origin and estimating the electron capture-cross-section ( σ n ) of the major nonradiative recombination centers (NRCs). To eliminate any influence by threading dislocations, free-standing GaN substrates were used. In Mg-doped p-type GaN, defect complexes composed of a Ga-vacancy (VGa) and multiple N-vacancies (VNs), namely, VGa(VN)2 [or even VGa(VN)3], are identified as the major intrinsic NRCs. Different from the case of 4H-SiC, atomic structures of intrinsic NRCs in p-type and n-type GaN are different: VGaVN divacancies are the major NRCs in n-type GaN. The σ n value approximately the middle of 10-13 cm2 is obtained for VGa(VN)n, which is larger than the hole capture-cross-section (σp = 7 × 10-14 cm2) of VGaVN in n-type GaN. Combined with larger thermal velocity of an electron, minority carrier lifetime in Mg-doped GaN becomes much shorter than that of n-type GaN.

  6. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  7. Impact of surface morphology on the properties of light emission in InGaN epilayers

    Science.gov (United States)

    Kristijonas Uždavinys, Tomas; Marcinkevičius, Saulius; Mensi, Mounir; Lahourcade, Lise; Carlin, Jean-François; Martin, Denis; Butté, Raphaël; Grandjean, Nicolas

    2018-05-01

    Scanning near-field optical microscopy was used to study the influence of the surface morphology on the properties of light emission and alloy composition in InGaN epitaxial layers grown on GaN substrates. A strong correlation between the maps of the photoluminescence (PL) peak energy and the gradient of the surface morphology was observed. This correlation demonstrates that the In incorporation strongly depends on the geometry of the monolayer step edges that form during growth in the step-flow mode. The spatial distribution of nonradiative recombination centers — evaluated from PL intensity maps — was found to strongly anticorrelate with the local content of In atoms in the InGaN alloy.

  8. Robust half-metallicity at the zincblende CrTe(0 0 1) surfaces and its interface with ZnTe(0 0 1)

    International Nuclear Information System (INIS)

    Ahmadian, F.; Abolhassani, M.R.; Hashemifar, S.J.; Elahi, M.

    2010-01-01

    All electron full potential calculations based on spin density functional theory are performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0 0 1) surfaces of ZB CrTe, and interface of ZB CrTe with ZnTe(0 0 1). The ferromagnetic NiAs structure is reported to be about 0.26 eV more stable than the ferromagnetic ZB phase while ZB CrTe is found to be a half-metallic ferromagnet with a half-metallic gap of about 2.90 eV. Thermodynamic stability of CrTe(0 0 1) surfaces are studied in the framework of ab-initio thermodynamic. The obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination. We discuss that both Te and Cr ideal terminations of CrTe(0 0 1) retain bulk-like half-metallic property but with a reduced half-metallic gap compared with bulk value. The structural, electronic, magnetic, and band alignment properties of the ZB CrTe/ZnTe(0 0 1) interface are computed and a rather large minority valence band offset of about 1.09 eV is observed in this heterojunction.

  9. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  10. Characterization of 380nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition

    Science.gov (United States)

    Shieh, C. Y.; Li, Z. Y.; Kuo, H. C.; Chang, J. Y.; Chi, G. C.

    2014-03-01

    We reported the defects and optical characterizations of the ultraviolet light-emitting diodes grown on free-standing GaN substrate (FS-GaN) and sapphire. Cross-sectional transmission electron microscopy (TEM) images showed that the total defect densities of grown UV LEDs on FS-GaN and sapphire including edge, screw and mixed type were 3.6×106 cm-2 and 5.5×108 cm-2. When substrate of UV LEDs was changed from sapphire to FS-GaN, it can be clearly found that the crystallography of GaN epilayers was drastically different from that GaN epilayers on sapphire. Besides, the microstructures or indium clustering can be not observed at UV LEDs on FS-GaN from TEM measurement. The internal quantum efficiency of UVLEDs on FS-GaN and sapphire were 34.8 % and 39.4 % respectively, which attributed to indium clustering in multi-layers quantum wells (MQWs) of UV LEDs on sapphire. The relationship between indiumclustering and efficiency droop were investigated by temperature-dependent electroluminescence (TDEL) measurements.

  11. Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

    International Nuclear Information System (INIS)

    Suresh Kumar, V.; Kumar, J.; Kanjilal, D.; Asokan, K.; Mohanty, T.; Tripathi, A.; Rossi, Francisca; Zappettini, A.; Lazzarani, L.; Ferrari, C.

    2008-01-01

    The Metal Organic Chemical Vapour Deposition (MOCVD) grown n-type Gallium nitride (GaN) layers on sapphire (0 0 0 1) substrates have been irradiated at low and room temperatures with 40 MeV Li 3+ ions at the fluence of 1 x 10 13 ions cm -2 . Irradiated samples were characterised by using X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and atomic force microscopy (AFM). XRD results show that the formation of Ga 2 O 3 has been observed upon irradiation. This is due to interface mixing of GaN/Al 2 O 3 , at both temperatures. Also the GaN (0 0 0 2) peak splits into two at low temperature irradiation. PL measurements show a yellow emission band shift towards blue band side upon irradiation at 77 K. Raman studies indicate that the lattice disorder is high at room temperature irradiation compared to low temperature irradiation. AFM images indicate the increasing surface roughness after ion irradiation at room temperature when compared to pristine GaN and low temperature irradiated GaN. These observations are discussed in detail with the use of complementary techniques

  12. Surface emission of InxGa1-xN epilayers under strong optical excitation

    International Nuclear Information System (INIS)

    Jiang, H.X.; Lin, J.Y.; Khan, M.A.; Chen, Q.; Yang, J.W.

    1997-01-01

    Effects of strong optical excitation on the properties of surface emission from an InGaN/GaN heterostructure grown by metal-organic chemical-vapor deposition have been investigated. An intriguing feature observed was that as the excitation intensity increased the surface emission spectrum evolved abruptly from a single dominating band to two dominating bands at a critical intensity. This phenomenon has a sharp phase transition or a switching character and can be accounted for by (i) the formation of an electron endash hole plasma state in the InGaN vertical cavity under strong optical excitation, (ii) the photoreflectance effect (variation of index of refraction with excitation intensity), and (c) the Fabry endash Pacute erot interference effect in the InGaN vertical cavity. These findings are expected to have impact on the design of the laser structures, in particular on the design of the vertical-cavity surface-emitting laser diodes based on III-nitride wide-band-gap semiconductors. copyright 1997 American Institute of Physics

  13. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

    Science.gov (United States)

    He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

    2017-12-13

    It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

  14. Optical properties of Zn{sub 1-x}Mg{sub x}Se epilayers studied by spectroscopy methods[thin films

    Energy Technology Data Exchange (ETDEWEB)

    Glowacki, G; Gapinski, A; Derkowska, B; Bala, W [Institute of Physics, N. Copernicus University, Torun (Poland); Sahraoui, B [Laboratoire des Proprietes Optiques des Materiaux et Applications (POMA), Universite d' Angeres, Angeres (France)

    1998-07-01

    Linear optical properties of Zn{sub 1-x}Mg{sub x}Se (0 {<=} x {<=} 0.4) alloys have been studied using reflectance, spectroscopic ellipsometry and photoluminescence measurements. The refractive indexes of Zn{sub 1-x}Mg{sub x}Se epilayers were investigated as a function of Mg composition (0 {<=} x {<=} 0.4). The energies of band gap E{sub g} and spin-orbit splitting E{sub g} + {delta}, have been determined. These energies are shifted gradually to higher values with increasing Mg content. (author)

  15. Investigation of Character and Spatial Distribution of Threading Edge Dislocations in 4H-SiC Epilayers by High-Resolution Topography

    International Nuclear Information System (INIS)

    Kamata, I.; Nagano, M.; Tsuchida, H.; Chen, Y.; Dudley, M.

    2009-01-01

    Topography image variation of threading edge dislocations (TEDs) in 4H-SiC epilayers has been investigated by grazing incidence high-resolution synchrotron topography. Six different images of TEDs resulting from an angle between the diffraction vector and the TED Burgers vector were confirmed by correlation between experimental topography images and simulation results. The TED-type distribution, dependent on the direction of the TED Burger vector, was examined on epitaxial wafers, while the spatial distribution of TEDs on a whole 2 in wafer along (1 1 2 0) and (1 1 0 0) was investigated.

  16. Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

    Science.gov (United States)

    Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

    1997-11-01

    Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

  17. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    Energy Technology Data Exchange (ETDEWEB)

    Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

    2017-02-24

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

  18. Graphic Grown Up

    Science.gov (United States)

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  19. Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

    International Nuclear Information System (INIS)

    Khazaka, Rami; Portail, Marc; Vennéguès, Philippe; Alquier, Daniel; Michaud, Jean François

    2015-01-01

    Graphical abstract: In this contribution, we demonstrated the influence of the 3C-SiC layer on the subsequent growth of Si epilayers. We were able to give a direct evidence that the rotation in the Si epilayer of 90° around the growth direction occurs exactly on the termination of an antiphase boundary in the 3C-SiC layer as shown in the figure above. Thus, increasing the layer thickness of the 3C-SiC leads to a direct improvement of the crystalline quality of the subsequent Si epilayer. (a) Cross-section bright-field TEM image of the Si/3C-SiC layer stack along two 3C-SiC zone axes [1 −1 0] and [1 1 0] (equivalent to [1 −1 1] and [1 1 2] in Si, respectively), (b) dark field image selecting a (2 0 −2) electron diffraction spot indicated by the black circle in the SAED shown as inset, (c) dark field image selecting a (−1 1 −1) electron diffraction spot indicated by the black circle in the SAED shown as inset. The dotted white line in the images show the position of the defect in the 3C-SiC layer. - Abstract: This work presents a structural study of silicon (Si) thin films grown on cubic silicon carbide (3C-SiC) by chemical vapor deposition. The presence of grains rotated by 90° around the growth direction in the Si layer is directly related to the presence of antiphase domains on the 3C-SiC surface. We were able to provide a direct evidence that the 90° rotation of Si grains around the growth direction occurs exactly on the termination of antiphase boundaries (APBs) in 3C-SiC layer. Increasing the 3C-SiC thickness reduces the APBs density on 3C-SiC surface leading to a clear improvement of the uppermost Si film crystal quality. Furthermore, we observed by high resolution plan-view TEM images the presence of hexagonal Si domains limited to few nm in size. These hexagonal Si domains are inclusions in small Si grains enclosed in larger ones rotated by 90°. Finally, we propose a model of grains formation in the Si layer taking into consideration the effect

  20. In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation

    Science.gov (United States)

    Kumar, Ashish; Singh, R.; Kumar, Parmod; Singh, Udai B.; Asokan, K.; Karaseov, Platon A.; Titov, Andrei I.; Kanjilal, D.

    2018-04-01

    A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial layers is carried out by employing in-situ electrical resistivity and cross sectional transmission electron microscopy (XTEM) microstructure measurements. The change in the current transport mechanism of Au/n-GaN Schottky barrier diodes due to irradiation is reported. The role of irradiation temperature and ion type was also investigated. Creation of damage is studied in low and medium electron energy loss regimes by selecting different ions, Ag (200 MeV) and O (100 MeV) at various fluences at two irradiation temperatures (80 K and 300 K). GaN resistivity increases up to 6 orders of magnitude under heavy Ag ions. Light O ion irradiation has a much lower influence on sheet resistance. The presence of isolated defect clusters in irradiated GaN epilayers is evident in XTEM investigation which is explained on the basis of the thermal spike model.

  1. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  2. Hydrothermally grown zeolite crystals

    International Nuclear Information System (INIS)

    Durrani, S.K.; Qureshi, A.H.; Hussain, M.A.; Qazi, N.K.

    2009-01-01

    The aluminium-deficient and ferrosilicate zeolite-type materials were synthesized by hydrothermal process at 150-170 degree C for various periods of time from the mixtures containing colloidal reactive silica, sodium aluminate, sodium hydroxide, iron nitrate and organic templates. Organic polycation templates were used as zeolite crystal shape modifiers to enhance relative growth rates. The template was almost completely removed from the zeolite specimens by calcination at 550 degree C for 8h in air. Simultaneous thermogravimetric (TG) and differential thermal analysis (DTA) was performed to study the removal of water molecules and the amount of organic template cations occluded inside the crystal pore of zeolite framework. The 12-13% weight loss in the range of (140-560 degree C) was associated with removal of the (C/sub 3/H/sub 7/)/sub 4/ N+ cation and water molecules. X-ray diffraction (XRD) analysis and scanning electron microscope (SEM) techniques were employed to study the structure, morphology and surface features of hydrothermally grown aluminium-deficient and ferrosilicate zeolite-type crystals. In order to elucidate the mode of zeolite crystallization the crystallinity and unit cell parameters of the materials were determined by XRD, which are the function of Al and Fe contents of zeolites. (author)

  3. Grown on Novel Microcarriers

    Directory of Open Access Journals (Sweden)

    Torsten Falk

    2012-01-01

    Full Text Available Human retinal pigment epithelial (hRPE cells have been tested as a cell-based therapy for Parkinson’s disease but will require additional study before further clinical trials can be planned. We now show that the long-term survival and neurotrophic potential of hRPE cells can be enhanced by the use of FDA-approved plastic-based microcarriers compared to a gelatin-based microcarrier as used in failed clinical trials. The hRPE cells grown on these plastic-based microcarriers display several important characteristics of hRPE found in vivo: (1 characteristic morphological features, (2 accumulation of melanin pigment, and (3 high levels of production of the neurotrophic factors pigment epithelium-derived factor (PEDF and vascular endothelial growth factor-A (VEGF-A. Growth of hRPE cells on plastic-based microcarriers led to sustained levels (>1 ng/ml of PEDF and VEGF-A in conditioned media for two months. We also show that the expression of VEGF-A and PEDF is reciprocally regulated by activation of the GPR143 pathway. GPR143 is activated by L-DOPA (1 μM which decreased VEGF-A secretion as opposed to the previously reported increase in PEDF secretion. The hRPE microcarriers are therefore novel candidate delivery systems for achieving long-term delivery of the neuroprotective factors PEDF and VEGF-A, which could have a value in neurodegenerative conditions such as Parkinson’s disease.

  4. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Engin Arslan

    2014-01-01

    Full Text Available The 150 nm thick, (0001 orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm template/(0001 sapphire substrate. The indium (x concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x, lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002 and asymmetric (10–15 reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.

  5. Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

    Energy Technology Data Exchange (ETDEWEB)

    Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

    2016-08-31

    This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.

  6. GREENHOUSE-GROWN CAPE GOOSEBERRY

    African Journals Online (AJOL)

    /2006 S 4,00. Printed in Uganda. All rights reserved O2006, African Crop Science Society. SHORT COMMINICATION. EFFECT OF GIBBERRELLIC ACID ON GROWTH AND FRUIT YIELD OF. GREENHOUSE-GROWN CAPE GOOSEBERRY.

  7. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  8. Structural properties of In0.53Ga0.47As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gao, Fangliang; Wen, Lei; Zhang, Xiaona; Guan, Yunfang; Li, Jingling; Zhang, Shuguang; Li, Guoqiang

    2015-01-01

    In 0.53 Ga 0.47 As epitaxial films are grown on 2-inch diameter Si (111) substrates by growing a low-temperature In 0.4 Ga 0.6 As buffer layer using molecular beam epitaxy. The effect of the buffer layer thickness on the as-grown In 0.53 Ga 0.47 As films is characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy (TEM). It is revealed that the crystalline quality and surface morphology of as-grown In 0.53 Ga 0.47 As epilayer are strongly affected by the thickness of the In 0.4 Ga 0.6 As buffer layer. From TEM investigation, we understand that the type and the distribution of dislocations of the buffer layer and the as-grown In 0.53 Ga 0.47 As film are different. We have demonstrated that the In 0.4 Ga 0.6 As buffer layer with a thickness of 12 nm can advantageously release the lattice mismatch stress between the In 0.53 Ga 0.47 As and Si substrate, ultimately leading to a high-quality In 0.53 Ga 0.47 As epitaxial film with low surface roughness. - Highlights: • We provide a simple approach to achieve high-quality In 0.53 Ga 0.47 As films on Si. • An appropriate thickness of In 0.4 Ga 0.6 As buffer layer can release mismatch strain. • High-quality In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer. • Smooth surface In 0.53 Ga 0.47 As film is grown on Si using 12-nm-thick buffer layer

  9. X-ray absorption study at the Mg and O K edges of ultrathin MgO epilayers on Ag(001)

    International Nuclear Information System (INIS)

    Luches, P.; D'Addato, S.; Valeri, S.; Groppo, E.; Prestipino, C.; Lamberti, C.; Boscherini, F.

    2004-01-01

    We determined the local atomic structure of MgO epilayers on Ag(001) by means of polarization-dependent x-ray absorption spectroscopy measurements at the Mg and O K edges. A quantitative analysis of the data in the extended energy range has been performed using multiple scattering simulations. We found that, even in the ultrathin limit, the local structure of the films is rocksalt and we obtained a quantitative evaluation of the average in-plane and out-of-plane film strain at the different thicknesses investigated. An in-plane compressive strain, due to lattice mismatch with the Ag substrate, is clearly present for the 3 ML film. The out-of-plane lattice constant is found to be expanded, in agreement with the expected behavior for a tetragonal distortion of the unit cell. This growth-induced strain is gradually released with increasing thickness and it is almost completely relaxed at 20 ML. Any significant intermixing with the Ag substrate can be ruled out. An expansion of the interplanar distance at the MgO-Ag interface is detected and its sign and magnitude are found to be in agreement with recent ab initio simulations. This work provides previously unavailable input for modeling the physical properties of the system and supports the hypothesis that the different electronic properties of MgO films on Ag(001) are not related to structural or compositional differences at the ultrathin limit

  10. The fabrication of a back-gated high electron mobility transistor - a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

    International Nuclear Information System (INIS)

    Linfield, E.H.; Jones, G.A.C.; Ritchie, D.A.; Thompson, J.H.

    1993-01-01

    A new technique for the fabrication of GaAs/AlGaAs back-gated high electron mobility transistors (HEMTs) is described in this paper. First we demonstrate that a dose of > 2 x 10 13 cm -2 Ga ions at an energy of 10 keV can be used to damage a 67 nm n + GaAs layer, rendering the implanted regions non-conducting. After implantation the epilayer has a 4 K sheet resistivity which is increased by a factor of ∼ 10 7 when compared with the original unimplanted value. This isolation procedure is then used to form a patterned back-gated HEMT by MBE regrowth on top of an in situ ion-implanted n + GaAs layer. The resulting structure is designed so that the back gate is rendered highly resistive under the regions where the ohmic contacts to the two-dimensional electron gas (2DEG) are formed, thus making shallow ohmic contacts unnecessary. The results obtained characteristic of a high-quality 2DEG with mobility limited by remote ionized impurity scattering. This technique can therefore be used as a means of controlling the 2DEG carrier concentration, whilst leaving the surface of the HEMT structure free for conventional lithographic processing. (Author)

  11. GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization

    International Nuclear Information System (INIS)

    Wang, L.S.; Tripathy, S.; Wang, B.Z.; Chua, S.J.

    2006-01-01

    Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(1 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(1 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates

  12. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    International Nuclear Information System (INIS)

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-01-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

  13. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-01-01

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm −1 , by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm −1 in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T c −1 , which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  14. The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Das, T. D., E-mail: tddas@hotmail.com [Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009 (India)

    2014-05-07

    InP{sub 1−x}Bi{sub x} epilayers (x ≥ 1.2%) on InP (001) are grown reproducibly by liquid phase epitaxy with conventional solution baking in a H{sub 2} environment. The Bi composition and surface morphology of the grown layers are studied by secondary ion mass spectroscopy and atomic force microscopy, respectively. High-resolution x-ray diffraction is used to characterize the lattice parameters and the crystalline quality of the layers. 10 K photoluminescence measurements indicate three clearly resolved peaks in undoped InP layers with band-to-band transition at 1.42 eV which is redshifted with Bi incorporation in the layer with a maximum band gap reduction of 50 meV/% Bi. The effect is attributed to the interaction between the valence band edge and Bi-related defect states as is explained here by valence-band anticrossing model. Room temperature Hall measurements indicate that the mobility of the layer is not significantly affected for Bi concentration up to 1.2%.

  15. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  16. Skin cancer full-grown from scar

    International Nuclear Information System (INIS)

    Zikiryakhodjaev, D.Z.; Sanginov, D.R.

    2001-01-01

    In this chapter authors investigate the peculiarities of skin cancer full-grown from scar, the theory of it's descent, quote some statistical data on skin cancer full-grown from scar and variety clinical forms of skin cancer full-grown from scar was shown, quote some methods of treatment

  17. Beryllium doped p-type GaN grown by metal-organic chemical vapor depostion

    International Nuclear Information System (INIS)

    Al-Tahtamouni, T.M.; Sedhain, A.; Lin, J.Y.; Jiang, H.X.

    2010-01-01

    The authors report on the growth of Be-doped p-type GaN epilayers by metal-organic chmical vapor deposition (MOCVD). The electrical and optical properties of the Be-doped GaN epilayers were studied by Hall-effect measurements and photoluminescence (PL) spectroscopy. The PL spectra of Be-doped GaN epilayers ethibited two emission lines at 3.36 and 2.71 eV, which were obsent in undoped epilayers. The transition at 3.36 eV was at 3.36 and 2.71eV, which were absent in undoped epilayers. The transition at 3.36 eV was assigned to the transition of free electrons to the neutral Be acceptor Be d eg.. The transition at 2.71 eV was assigned to the transition of electrons bound to deep level donors to the Be d eg. acceptors. Three independent measurements: (a) resistivity vs. temperature, (b) PL peak positions between Be doped and undoped GaN and (c) activation energy of 2.71 eV transition all indicate that the Be energy level is between 120 and 140 meV above the valence band. This is about 20-40 meV shallower than the Mg energy level (160 meV) in GaN. It is thus concluded that Be could be an excellent acceptor dopant in nitride materials. (authors).

  18. Solubility limit of Mn{sup 2+} ions in Zn{sub 1−x}Mn{sub x}Te nanocrystals grown within an ultraviolet-transparent glass template

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Alessandra dos Santos, E-mail: alemestrado@gmail.com [Universidade Federal de Uberlândia, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física (Brazil); Silva, Sebastião William da; Morais, Paulo Cesar de [Universidade de Brasília, Núcleo de Física Aplicada, Instituto de Física (Brazil); Dantas, Noelio Oliveira [Universidade Federal de Uberlândia, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física (Brazil)

    2016-05-15

    This paper reports on the synthesis of Zn{sub 1−x}Mn{sub x}Te nanocrystals (NCs) (with 0 ≤ x ≤ 0.800) within a PZABP glass system (P{sub 2}O{sub 5}–ZnO–Al{sub 2}O{sub 3}–BaO–PbO) using the fusion method. The as-grown samples were investigated by optical absorption measurements, atomic force microscopy, X-ray diffraction, and Raman spectroscopy. The mean radius of the as-produced NCs (around R ≈ 2.2 nm) was well below the exciton Bohr radius of the bulk ZnTe (5.2 nm). All the characterization techniques employed in this report confirmed the successful inclusion of Mn{sup 2+} ions in the ZnTe-based NCs (Zn{sub 1−x}Mn{sub x}Te NCs) up to the nominal solubility limit of x = 0.100. Above this solubility limit (around x = 0.100), one can observe the formation of MnO and α-MnO{sub 2} NCs, since the nucleation rate for the formation of these NCs is greater than that of Zn{sub 1−x}Mn{sub x}Te NCs, at high x concentrations.Graphical abstract.

  19. Effect of In_xGa_1_−_xAs interlayer on the properties of In_0_._3Ga_0_._7As epitaxial films grown on Si (111) substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gao, Fangliang; Wen, Lei; Zhang, Shuguang; Li, Jingling; Zhang, Xiaona; Li, Guoqiang; Liu, Ying

    2015-01-01

    High-quality In_0_._3Ga_0_._7As films have been epitaxially grown on Si (111) substrate by inserting an In_xGa_1_−_xAs interlayer with various In compositions by molecular beam epitaxy. The effect of In_xGa_1_−_xAs interlayer on the surface morphology and structural properties of In_0_._3Ga_0_._7As films is studied in detail. It reveals that In_0_._3Ga_0_._7As films grown at appropriate In composition in In_xGa_1_−_xAs interlayer exhibit smooth surface with a surface root-mean-square roughness of 1.7 nm; while In_0_._3Ga_0_._7As films grown at different In composition of In_xGa_1_−_xAs interlayer show poorer properties. This work demonstrates a simple but effective method to grow high-quality In_0_._3Ga_0_._7As epilayers on Si substrates, and brings up a broad prospect for the application of InGaAs-based optoelectronic devices on Si substrates. - Highlights: • We provide a simple approach to achieve high-quality In_0_._3Ga_0_._7As films on Si. • An In_0_._2_8Ga_0_._7_2As interlayer can release mismatch strain. • High-quality In_0_._3Ga_0_._7As film is grown on Si using 10-nm-thick interlayer. • Smooth surface In_0_._3Ga_0_._7As film is grown on Si using 10-nm-thick interlayer.

  20. Bismuth containing III-V quaternary alloy InGaAsBi grown by MBE

    International Nuclear Information System (INIS)

    Feng, G.; Oe, K.; Yoshimoto, M.

    2006-01-01

    InGaAsBi epilayers were created on InP substrates by molecular beam epitaxy for the first time. The high crystalline quality of the InGaAsBi epilayer with smooth interface was confirmed by high resolution X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (RBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  1. Competitiveness of organically grown cereals

    Directory of Open Access Journals (Sweden)

    Jaroslav Jánský

    2007-01-01

    Full Text Available The contribution is aimed at the assessment of recommended crop management practices of chosen cereals for organic farming. To increase competitiveness, these practices are modified depending on soil and climatic conditions, and on a way of production use. Furthermore, impacts of the recommended crop management practices on economics of growing chosen cereals are evaluated and compared with economic results obtained under conventional farming. It is assumed that achieved results will contribute to the increase in proportion of arable crops in the Czech Republic where organic production offer does not meet current demands.When evaluating results of growing individual cereal species in a selective set of organic farms, triticale, spelt and spring barley (in this ranking can be considered as profitable crops. Moreover, triticale and spelt have even higher gross margin under organic farming than under conventional farming (by 62 % in triticale. Oat brings losses, however, it is important for livestock production. Winter wheat seems to be also unprofitable since less grain is produced at lower imputs per hectare and only part of it is produced in quality “bio”, i.e. marketed for higher prices. Rye also brings losses under organic farming, particularly due to lower yields, similarly to the other mentioned cereals. Special cereal species that are still neglected in organic farming systems are of potential use. Durum wheat has vitreous kernels with a high content of quality gluten which is used for pasta production. It can be grown in the maize production area on fertile soils only.

  2. Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

    International Nuclear Information System (INIS)

    Chung, S J; Lee, Y S; Suh, E-K; Senthil Kumar, M; An, M H

    2010-01-01

    Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

  3. Characterization of Al{sub x}Ga{sub 1-x}As/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, R. [Universidad Politecnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Barbara, Municipio de Zempoala, Hidalgo 43830 (Mexico); Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.co [Instituto Politecnico Nacional, Centro de Investigacion en Biotecnologia Aplicada, CIBA-IPN, Ex Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700 (Mexico); Galvan-Arellano, M.; Pena-Sierra, R. [CINVESTAV-IPN, Depto. de Ing. Electrica, SEES. Apdo. 14-740, Mexico, D.F. 07000 (Mexico)

    2011-06-15

    This work presents the results of the growth and characterization of Al{sub x}Ga{sub 1-x}As/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH{sub 3}), which manifests in the electrical and optical characteristics of both GaAs and Al{sub x}Ga{sub 1-x}As layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). - Research highlights: {yields} This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. {yields} The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. {yields} The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. {yields} The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.

  4. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Science.gov (United States)

    Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A.; Martínez-Criado, G.; Salomé, M.; Susini, J.; Olguín, D.; Dhar, S.

    2009-07-01

    By means of x-ray absorption near-edge structure (XANES) several Ga1-xMnxN (0.03epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding \\mathrm {t_{2}}\\uparrow band localized in the gap region, and the corresponding anti-bonding state \\mathrm {t_{2}}\\downarrow , which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  5. X-ray absorption near-edge structure of GaN with high Mn concentration grown on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Sancho-Juan, O; Cantarero, A; Garro, N; Cros, A [Materials Science Institute, University of Valencia, PO Box 22085, E46071 Valencia (Spain); Martinez-Criado, G; Salome, M; Susini, J [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, 38043 Grenoble (France); Olguin, D [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D F (Mexico); Dhar, S [Experimentalphysik, Universitaet Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

    2009-07-22

    By means of x-ray absorption near-edge structure (XANES) several Ga{sub 1-x}Mn{sub x}N (0.03epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The low mismatch between GaN and SiC allows for a good quality and homogeneity of the material. The measurements were performed in fluorescence mode around both the Ga and Mn K edges. All samples studied present a similar Mn ionization state, very close to 2+, and tetrahedral coordination. In order to interpret the near-edge structure, we have performed ab initio calculations using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of a Mn bonding t{sub 2}arrow up band localized in the gap region, and the corresponding anti-bonding state t{sub 2}arrow down, which seem to be responsible for the double structure which appears at the pre-edge absorption region. The shoulders and main absorption peak of the XANES spectra are attributed to transitions from the Mn(1s) band to the conduction bands, which are partially dipole allowed because of the Mn(4p) contribution to these bands.

  6. Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

    Science.gov (United States)

    Barick, B. K.; Saroj, Rajendra Kumar; Prasad, Nivedita; Sutar, D. S.; Dhar, S.

    2018-05-01

    Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 1 1 2 bar 0 ] and [0 0 0 1] directions leading to the formation of such a network structure, where the vertically [0 0 0 1] oriented tapered walls are laterally align along one of the three [ 1 1 2 bar 0 ] directions. Inclined facets of these walls are identified as semipolar (1 1 2 bar 2) -planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(1 1 2 bar 2) -planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

  7. Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

    2007-01-01

    Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

  8. A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, K. L.; Kuech, T. F. [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2014-12-28

    GaAs growth by hydride vapor phase epitaxy (HVPE) has regained interest as a potential route to low cost, high efficiency thin film photovoltaics. In order to attain the highest efficiencies, deep level defect incorporation in these materials must be understood and controlled. The arsenic anti-site defect, As{sub Ga} or EL2, is the predominant deep level defect in HVPE-grown GaAs. In the present study, the relationships between HVPE growth conditions and incorporation of EL2 in GaAs epilayers were determined. Epitaxial n-GaAs layers were grown under a wide range of deposition temperatures (T{sub D}) and gallium chloride partial pressures (P{sub GaCl}), and the EL2 concentration, [EL2], was determined by deep level transient spectroscopy. [EL2] agreed with equilibrium thermodynamic predictions in layers grown under conditions in which the growth rate, R{sub G}, was controlled by conditions near thermodynamic equilibrium. [EL2] fell below equilibrium levels when R{sub G} was controlled by surface kinetic processes, with the disparity increasing as R{sub G} decreased. The surface chemical composition during growth was determined to have a strong influence on EL2 incorporation. Under thermodynamically limited growth conditions, e.g., high T{sub D} and/or low P{sub GaCl}, the surface vacancy concentration was high and the bulk crystal was close to equilibrium with the vapor phase. Under kinetically limited growth conditions, e.g., low T{sub D} and/or high P{sub GaCl}, the surface attained a high GaCl coverage, blocking As adsorption. This competitive adsorption process reduced the growth rate and also limited the amount of arsenic that incorporated as As{sub Ga}. A defect incorporation model which accounted for the surface concentration of arsenic as a function of the growth conditions, was developed. This model was used to identify optimal growth parameters for the growth of thin films for photovoltaics, conditions in which a high growth rate and low [EL2] could be

  9. Analysis of MBE-grown II-VI hetero-interfaces and quantum-dots by Raman spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bass, Utz

    2012-10-16

    The material system of interest in this thesis are II-VI-semiconductors. The first part of this thesis focuses on the formation of self-assembled CdSe-based quantum dots (QD) on ZnSe. The lattice constants of ZnSe and CdSe differ as much as about 7% and therefore a CdSe layer grown on top of ZnSe experiences a huge strain. The aspired strain relief constitutes in the self-assembly of QDs (i.e. a roughened layer structure). Additionally, this QD layer is intermixed with Zn as this is also a possibility to decrease the strain in the layer. For CdSe on ZnSe, in Molecular Beam Epitaxy (MBE), various QD growth procedures were analysed with respect to the resulting Cd-content of the non-stoichiometric ternary (Zn,Cd)Se. The evaluation was performed by Raman Spectroscopy as the phonon frequency depends on the Cd-content. The second part of the thesis emphasis on the interface properties of n-ZnSe on n-GaAs. Different growth start procedures of the ZnSe epilayer may lead to different interface configurations with characteristic band-offsets and carrier depletion layer widths. The analysis is mainly focused on the individual depletion layer widths in the GaAs and ZnSe. This non-destructive analysis is performed by evaluating the Raman signal which comprises of phonon scattering from the depleted regions and coupled plasmon-phonon scattering from regions with free carriers.

  10. Analysis of MBE-grown II-VI hetero-interfaces and quantum-dots by Raman spectroscopy

    International Nuclear Information System (INIS)

    Bass, Utz

    2012-01-01

    The material system of interest in this thesis are II-VI-semiconductors. The first part of this thesis focuses on the formation of self-assembled CdSe-based quantum dots (QD) on ZnSe. The lattice constants of ZnSe and CdSe differ as much as about 7% and therefore a CdSe layer grown on top of ZnSe experiences a huge strain. The aspired strain relief constitutes in the self-assembly of QDs (i.e. a roughened layer structure). Additionally, this QD layer is intermixed with Zn as this is also a possibility to decrease the strain in the layer. For CdSe on ZnSe, in Molecular Beam Epitaxy (MBE), various QD growth procedures were analysed with respect to the resulting Cd-content of the non-stoichiometric ternary (Zn,Cd)Se. The evaluation was performed by Raman Spectroscopy as the phonon frequency depends on the Cd-content. The second part of the thesis emphasis on the interface properties of n-ZnSe on n-GaAs. Different growth start procedures of the ZnSe epilayer may lead to different interface configurations with characteristic band-offsets and carrier depletion layer widths. The analysis is mainly focused on the individual depletion layer widths in the GaAs and ZnSe. This non-destructive analysis is performed by evaluating the Raman signal which comprises of phonon scattering from the depleted regions and coupled plasmon-phonon scattering from regions with free carriers.

  11. Structural disorder of natural BimSen superlattices grown by molecular beam epitaxy

    Science.gov (United States)

    Springholz, G.; Wimmer, S.; Groiss, H.; Albu, M.; Hofer, F.; Caha, O.; Kriegner, D.; Stangl, J.; Bauer, G.; Holý, V.

    2018-05-01

    The structure and morphology of BimSen epitaxial layers with compositions ranging from Bi2Se3 to the Bi1Se1 grown by molecular beam epitaxy with different flux compositions are investigated by transmission electron microscopy, high-resolution x-ray diffraction, and atomic force microscopy. It is shown that the lattice structure changes significantly as a function of the beam flux composition, i.e., Se/BiSe flux ratio that determines the stoichiometry of the layers. A perfect Bi2Se3 phase is formed only with a sufficiently high additional Se flux, whereas Bi1Se1 is obtained when only a BiSe compound source without additional Se is used. For intermediate values of the excess Se flux during growth, Bi2Se3 -δ layers are obtained with the Se deficit δ varying between 0 and 1. This Se deficit is accommodated by incorporation of additional Bi-Bi double layers into the Bi2Se3 structure that otherwise exclusively consists of Se-Bi-Se-Bi-Se quintuple layers. While a periodic insertion of such Bi double layers would result in the formation of natural BimSen superlattices, we find that this Bi double-layer insertion is rather stochastic with a high degree of disorder depending on the film composition. Therefore, the structure of such epilayers is better described by a one-dimensional paracrystal model, consisting of disordered sequences of quintuple and double layers rather than by strictly periodic natural superlattices. From detailed analysis of the x-ray diffraction data, we determine the dependence of the lattice parameters a and c and distances of the individual (0001) planes dj as a function of composition, evidencing that only the in-plane lattice parameter a shows a linear dependence on composition. The simulation of the diffraction curves with the random stacking paracrystal model yields an excellent agreement with the experimental data and it brings quantitative information on the randomness of the stacking sequence, which is compared to growth modeling using Monte

  12. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

    Science.gov (United States)

    Bru-Chevallier, C; El Akra, A; Pelloux-Gervais, D; Dumont, H; Canut, B; Chauvin, N; Regreny, P; Gendry, M; Patriarche, G; Jancu, J M; Even, J; Noe, P; Calvo, V; Salem, B

    2011-10-01

    The aim of this study is to achieve homogeneous, high density and dislocation free InGaAs quantum dots grown by molecular beam epitaxy for light emission on silicon substrates. This work is part of a project which aims at overcoming the severe limitation suffered by silicon regarding its optoelectronic applications, especially efficient light emission device. For this study, one of the key points is to overcome the expected type II InGaAs/Si interface by inserting the InGaAs quantum dots inside a thin silicon quantum well in SiO2 fabricated on a SOI substrate. Confinement effects of the Si/SiO2 quantum well are expected to heighten the indirect silicon bandgap and then give rise to a type I interface with the InGaAs quantum dots. Band structure and optical properties are modeled within the tight binding approximation: direct energy bandgap is demonstrated in SiO2/Si/InAs/Si/SiO2 heterostructures for very thin Si layers and absorption coefficient is calculated. Thinned SOI substrates are successfully prepared using successive etching process resulting in a 2 nm-thick Si layer on top of silica. Another key point to get light emission from InGaAs quantum dots is to avoid any dislocations or defects in the quantum dots. We investigate the quantum dot size distribution, density and structural quality at different V/III beam equivalent pressure ratios, different growth temperatures and as a function of the amount of deposited material. This study was performed for InGaAs quantum dots grown on Si(001) substrates. The capping of InGaAs quantum dots by a silicon epilayer is performed in order to get efficient photoluminescence emission from quantum dots. Scanning transmission electronic microscopy images are used to study the structural quality of the quantum dots. Dislocation free In50Ga50As QDs are successfully obtained on a (001) silicon substrate. The analysis of QDs capped with silicon by Rutherford Backscattering Spectrometry in a channeling geometry is also presented.

  13. Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs

    Energy Technology Data Exchange (ETDEWEB)

    Aleksiejunas, R. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Lubys, L.; Jarasiunas, K. [Institute of Applied Research, Vilnius University, Sauletekio Ave. 9-III, 10222 Vilnius (Lithuania); Vengris, M. [Laser Research Center, Vilnius University, Sauletekio Ave. 10, 10222 Vilnius (Lithuania); Wernicke, T.; Hoffmann, V.; Netzel, C.; Knauer, A.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Kneissl, M. [Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12498 Berlin (Germany); Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2011-07-15

    We studied carrier recombination and diffusion in GaN/sapphire templates, (In,Ga)N layers, and (In,Ga)N quantum well structures oriented along the polar [0001], semi-polar [11-22], and non-polar [11-20] orientations by means of light induced transient grating, differential transmission, and photoluminescence optical techniques. We show that the lifetime of excess carriers drops by orders of magnitude when changing the orientation from polar to non-polar, both in GaN templates and (In,Ga)N layers. We attribute the shorter lifetime to carrier trapping by extended structural defects that are more abundant in non-polar grown samples. In addition, we observe pronounced carrier localization effects in the semi- and non-polar layers. We show that thick (In,Ga)N layers inherit the properties of the GaN templates. However, the thin quantum well structures show a lower carrier trapping activity. So, a better electrical quality can be assumed as compared to the thick (In,Ga)N layers. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

    Science.gov (United States)

    Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

    2015-07-24

    The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

  15. CONSUMER ATTITUDES TOWARD ORGANICALLY GROWN LETTUCE

    OpenAIRE

    Wolf, Marianne McGarry; Johnson, Bradey; Cochran, Kerry; Hamilton, Lynn L.

    2002-01-01

    This research shows that approximately 29 percent of lettuce purchases in California expect to purchase an organically grown lettuce product in the future. Organic lettuce purchasers are more likely to be female, have a higher household income and a higher level of education. Consumers are concerned with the freshness, quality, price, and environmental impact of the lettuce they purchase.

  16. Recrystallization phenomena of solution grown paraffin dendrites

    NARCIS (Netherlands)

    Hollander, F.F.A.; Hollander, F.; Stasse, O.; van Suchtelen, J.; van Enckevort, W.J.P.

    2001-01-01

    Paraffin crystals were grown from decane solutions using a micro-Bridgman set up for in-situ observation of the morphology at the growth front. It is shown that for large imposed velocities, dendrites are obtained. After dendritic growth, aging or recrystallization processes set in rather quickly,

  17. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with praseodymium oxide dielectric layers

    International Nuclear Information System (INIS)

    Sohal, R.

    2006-01-01

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO 2 /SiC interface. Clean, graphite-free SiO 2 has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr 2 O 3 on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr 2 O 3 and SiC, and simultaneously provide higher band offsets. (orig.)

  18. CVD growth of (001) and (111)3C-SiC epilayers and their interface reactivity with pradeodymium oxide dielectric layers

    Energy Technology Data Exchange (ETDEWEB)

    Sohal, R.

    2006-07-24

    In this work, growth and characterisation of 3C-SiC thin films, investigation of oxidation of thus prepared layers and Pr-silicate and AlON based interface with SiC have been studied. Chemical vapor deposition of 3C-SiC thin films on Si(001) and Si(111) substrates has been investigated. Prior to the actual SiC growth, preparation of initial buffer layers of SiC was done. Using such a buffer layer, epitaxial growth of 3C-SiC has been achieved on Si(111) and Si(001) substrates. The temperature of 1100 C and 1150 C has been determined to be the optimal temperature for 3C-SiC growth on Si (111) and Si(001) substrates respectively. The oxidation studies on SiC revealed that a slow oxidation process at moderate temperatures in steps was useful in reducing and suppressing the g-C at the SiO{sub 2}/SiC interface. Clean, graphite-free SiO{sub 2} has been successfully grown on 3C-SiC by silicon evaporation and UHV anneal. For the application of high-k Pr{sub 2}O{sub 3} on silicon carbide, plausible interlayer, Pr-Silicate and AlON, have been investigated. Praseodymium silicate has been prepared successfully completely consuming the SiO2 and simultaneously suppressing the graphitic carbon formation. A comparatively more stable interlayer using AlON has been achieved. This interlayer mainly consists of stable phases of AlN along with some amount of Pr-aluminates and CN. Such layers act as a reaction barrier between Pr{sub 2}O{sub 3} and SiC, and simultaneously provide higher band offsets. (orig.)

  19. Counting molecular-beam grown graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Plaut, Annette S. [School of Physics, University of Exeter, Exeter EX4 4QL (United Kingdom); Wurstbauer, Ulrich [Department of Physics, Columbia University, New York, New York 10027 (United States); Pinczuk, Aron [Department of Physics, Columbia University, New York, New York 10027 (United States); Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Garcia, Jorge M. [MBE Lab, IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid, E-28760 (Spain); Pfeiffer, Loren N. [Electrical Engineering Department, Princeton University, New Jersey 08544 (United States)

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  20. Lethal photosensitization of biofilm-grown bacteria

    Science.gov (United States)

    Wilson, Michael

    1997-12-01

    Antibacterial agents are increasingly being used for the prophylaxis and treatment of oral diseases. As these agents can be rendered ineffective by resistance development in the target organisms there is a need to develop alternative antimicrobial approaches. Light-activated antimicrobial agents release singlet oxygen and free radicals which can kill adjacent bacteria and a wide range of cariogenic and periodontopathogenic bacteria has been shown to be susceptible to such agents. In the oral cavity these organisms are present as biofilms (dental plaques) which are less susceptible to traditional antimicrobial agents than bacterial suspensions. The results of these studies have shown that biofilm-grown oral bacteria are also susceptible to lethal photosensitization although the light energy doses required are grater than those needed to kill the organisms when they are grown as aqueous suspensions.

  1. Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

    Science.gov (United States)

    Nishio, Mitsuhiro; Saito, Katsuhiko; Urata, Kensuke; Okamoto, Yasuhiro; Tanaka, Daichi; Araki, Yasuhiro; Abiru, Masakatsu; Mori, Eiichiro; Tanaka, Tooru; Guo, Qixin

    2015-03-01

    The growth of undoped and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.

  2. Heteroepitaxially grown InP solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

    1990-01-01

    Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

  3. Mineral composition of organically grown tomato

    Science.gov (United States)

    Ghambashidze, Giorgi

    2014-05-01

    In recent years, consumer concerns on environmental and health issues related to food products have increased and, as a result, the demand for organically grown production has grown. Results indicate that consumers concerned about healthy diet and environmental degradation are the most likely to buy organic food, and are willing to pay a high premium. Therefore, it is important to ensure the quality of the produce, especially for highly consumed products. The tomato (Lycopersicon esculentum) is one of the most widely consumed fresh vegetables in the world. It is also widely used by the food industries as a raw material for the production of derived products such as purees or ketchup. Consequently, many investigations have addressed the impact of plant nutrition on the quality of tomato fruit. The concentrations of minerals (P, Na, K, Ca and Mg) and trace elements (Cu, Zn and Mn) were determined in tomatoes grown organically in East Georgia, Marneuli District. The contents of minerals and Mn seem to be in the range as shown in literature. Cu and Zn were found in considerably high amounts in comparison to maximum permissible values established in Georgia. Some correlations were observed between the minerals and trace elements studied. K and Mg were strongly correlated with Cu and Zn. Statistically significant difference have shown also P, K and Mg based between period of sampling.

  4. Tissue grown in space in NASA Bioreactor

    Science.gov (United States)

    2001-01-01

    Dr. Lisa E. Freed of the Massachusetts Institute of Technology and her colleagues have reported that initially disc-like specimens tend to become spherical in space, demonstrating that tissues can grow and differentiate into distinct structures in microgravity. The Mir Increment 3 (Sept. 16, 1996 - Jan. 22, 1997) samples were smaller, more spherical, and mechanically weaker than Earth-grown control samples. These results demonstrate the feasibility of microgravity tissue engineering and may have implications for long human space voyages and for treating musculoskeletal disorders on earth. Final samples from Mir and Earth appeared histologically cartilaginous throughout their entire cross sections (5-8 mm thick), with the exception of fibrous outer capsules. Constructs grown on Earth (A) appeared to have a more organized extracellular matrix with more uniform collagen orientation as compared with constructs grown on Mir (B), but the average collagen fiber diameter was similar in the two groups (22 +- 2 nm) and comparable to that previously reported for developing articular cartilage. Randomly oriented collagen in Mir samples would be consistent with previous reports that microgravity disrupts fibrillogenesis. These are transmission electron micrographs of constructs from Mir (A) and Earth (B) groups at magnifications of x3,500 and x120,000 (Inset). The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Credit: Proceedings of the National Academy of Sciences.

  5. Recent results in characterization of melt-grown and quench-melt- grown YBCO superconductors

    International Nuclear Information System (INIS)

    Balachandran, U.; Poeppel, R.B.; Gangopadhyay, A.K.

    1992-02-01

    From the standpoint of applications, melt-grown (MG) and quench-melt-grown (QMG) bulk YBCO superconductors are of considerable interest. In this paper, we studied the intragranular critical current density (J c ), the apparent pinning potential (U o ), and the irreversibility temperature (T irr ) of MG and QMG samples and compared the results to those for conventionally sintered YBCO. A systematic increase in U o and a slower drop in J c with temperature indicate a systematic improvement in flux-pinning properties in progressing from the sintered YBCO to QMG and MG samples. Weaker pinning is observed in the QMG YBCO than in the MG samples

  6. Phytochemical phenolics in organically grown vegetables.

    Science.gov (United States)

    Young, Janice E; Zhao, Xin; Carey, Edward E; Welti, Ruth; Yang, Shie-Shien; Wang, Weiqun

    2005-12-01

    Fruit and vegetable intake is inversely correlated with risks for several chronic diseases in humans. Phytochemicals, and in particular, phenolic compounds, present in plant foods may be partly responsible for these health benefits through a variety of mechanisms. Since environmental factors play a role in a plant's production of secondary metabolites, it was hypothesized that an organic agricultural production system would increase phenolic levels. Cultivars of leaf lettuce, collards, and pac choi were grown either on organically certified plots or on adjacent conventional plots. Nine prominent phenolic agents were quantified by HPLC, including phenolic acids (e. g. caffeic acid and gallic acid) and aglycone or glycoside flavonoids (e. g. apigenin, kaempferol, luteolin, and quercetin). Statistically, we did not find significant higher levels of phenolic agents in lettuce and collard samples grown organically. The total phenolic content of organic pac choi samples as measured by the Folin-Ciocalteu assay, however, was significantly higher than conventional samples (p lettuce and collards, the organic system provided an increased opportunity for insect attack, resulting in a higher level of total phenolic agents in pac choi.

  7. Creep properties of a thermally grown alumina

    Energy Technology Data Exchange (ETDEWEB)

    Kang, K.J. [Department of Mechanical Engineering, Chonnam National University, Kwangju 500-757 (Korea, Republic of)], E-mail: kjkang@chonnam.ac.kr; Mercer, C. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)

    2008-04-15

    A unique test system has been developed to measure creep properties of actual thermally grown oxides (TGO) formed on a metal foil. The thickness of TGO, load and displacement can be monitored in situ at high temperature. Two batches of FeCrAlY alloys which differ from each other in contents of yttrium and titanium were selected as the {alpha}-Al{sub 2}O{sub 3} TGO forming materials. The creep tests were performed on {alpha}-Al{sub 2}O{sub 3} of thickness 1-4 {mu}m, thermally grown at 1200 deg. C in air. The strength of the substrate was found to be negligible, provided that the TGO and substrate thickness satisfy: h{sub TGO} > 1 {mu}m and H{sub sub} {<=} 400 {mu}m. The steady-state creep results for all four TGO thicknesses obtained on batch I reside within a narrow range, characterized by a parabolic creep relation. It is nevertheless clear that the steady-state creep rates vary with TGO thickness: decreasing as the thickness increases. For batch II, the steady-state creep rates are higher and now influenced more significantly by TGO thickness. In comparison with previous results of the creep properties for bulk polycrystalline {alpha}-Al{sub 2}O{sub 3} at a grain size of {approx}2 {mu}m, the creep rates for the TGO were apparently higher, but both were significantly affected by yttrium content. The higher creep rate and dependency on the TGO thickness led to a hypothesis that the deformation of the TGO under tensile stress at high temperature was not a result of typical creep mechanisms such as diffusion of vacancies or intra-granular motion of dislocations, but a result of inter-grain growth of TGO. Results also indicate that the amount of yttrium may influence the growth strain as well as the creep rate.

  8. 76 FR 16323 - Irish Potatoes Grown in Washington; Continuance Referendum

    Science.gov (United States)

    2011-03-23

    ...; FV11-946-1 CR] Irish Potatoes Grown in Washington; Continuance Referendum AGENCY: Agricultural... conducted among eligible Washington potato growers to determine whether they favor continuance of the marketing order regulating the handling of Irish potatoes grown in Washington. DATES: The referendum will be...

  9. Leaf anatomy of genotypes of banana plant grown under coloured ...

    African Journals Online (AJOL)

    This study aimed to evaluate the effect of spectral light quality on different anatomical features of banana tree plantlets grown under coloured shade nets. Banana plants of five genotypes obtained from micropropagation, were grown under white, blue, red and black nets, with shade of 50%, in a completely randomized ...

  10. Influence of shading on container-grown flowering dogwoods

    Science.gov (United States)

    Bare root dogwoods can be successfully grown when transplanted into a container production system. Shade treatments regardless of color or density did have an effect on the plant growth of Cherokee Brave™ and Cherokee Princess dogwood. Plants grown under 50% black and 50% white shade had more heigh...

  11. Structural Reliability of the Nigerian Grown Abura Timber Bridge ...

    African Journals Online (AJOL)

    Structural reliability analysis was carried out on the Nigerian grown Abura timber, to ascertain its structural performance as timber bridge beams. Samples of the Nigerian grown Abura timber were bought from timber market, seasoned naturally and their structural/strength properties were determined at a moisture content of ...

  12. Superconductivity in MBE grown InN

    Energy Technology Data Exchange (ETDEWEB)

    Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ, Colchester (United Kingdom); Tiras, E.; Ardali, S. [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir (Turkey); Ajagunna, A.O.; Iliopoulos, E.; Georgakilas, A. [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion, Crete (Greece)

    2011-05-15

    We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n{sub 3D}=1.185x10{sup 19} cm{sup -3}. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10{sup 19} cm{sup -3}, 1.38x10{sup 19} cm{sup -3}, and thicknesses of 2070 and 4700 nm, respectively. The carrier density of all investigated samples was within the range of values between the Mott transition (2x10{sup 17} cm{sup -3}) and the superconductivity to metal transition (7x10{sup 20} cm{sup -3}). We believe that at lower temperatures ({sup 3}He) which we cannot achieve with our set-up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type-II superconductivity is discussed (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Carbon Nanotube Microarrays Grown on Nanoflake Substrates

    Science.gov (United States)

    Schmidt, Howard K.; Hauge, Robert H.; Pint, Cary; Pheasant, Sean

    2013-01-01

    This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is

  14. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

    International Nuclear Information System (INIS)

    López-Escalante, M.C.; Gabás, M.; García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C.; Palanco, S.; Ramos-Barrado, J.R.

    2016-01-01

    Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

  15. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    López-Escalante, M.C., E-mail: mclopez@uma.es [Nanotech Unit, Laboratorio de Materiales y Superficies, Departamento de Ingeniería Química, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Gabás, M. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain); García, I.; Barrigón, E.; Rey-Stolle, I.; Algora, C. [Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid Spain (Spain); Palanco, S.; Ramos-Barrado, J.R. [The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain (Spain)

    2016-01-01

    Graphical abstract: - Highlights: • GaAs, AlInP and GaInP epi-layers grown in a MOVPE facility. • GaAs/GaInP and GaAs/AlInP interfaces studied through the combination of angle resolved and depth profile X-ray photoelectros spectroscopies. • GaAs/GaInP interface shows no features appart from GaAs, GaInP and mixed GaInAs or GaInAsP phases. • GaAs/AlInP interface shows traces of an anomalous P environment, probably due to P-P clusters. - Abstract: GaAs/GaInP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar{sup +} sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GaInP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GaInAsP in addition to the nominal GaAs and GaInP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AlInP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AlInP, GaInAsP or AlGaInAsP, located at the interface.

  16. assessment of cadmium and lead in soil and tomatoes grown

    African Journals Online (AJOL)

    MAHMUD IMAM

    Transfer of Heavy Metals from Soil to Lettuce (Lactuca sativa) grown in irrigated farmlands of ... respectively being the highest elements absorbed by the lettuce samples from the irrigated .... radioactive elements and organic chemicals,.

  17. Metals in leafy vegetables grown in Addis Ababa and toxicological ...

    African Journals Online (AJOL)

    Metals in leafy vegetables grown in Addis Ababa and toxicological implications. ... the leafy vegetables is attributed to plant differences in tolerance to heavy metals. ... Treatment of industrial effluents and phyto-extraction of excess metals from ...

  18. Quality and Quantity Evaluations of Shade Grown Forages

    Science.gov (United States)

    K. P. Ladyman; M. S. Kerley; R. L. Kallenbach; H. E. Garrett; J. W. Van Sambeek; N. E. Navarrete-Tindall

    2003-01-01

    Seven legumes were grown during the summer-fall of 2000, at the Horticulture and Agroforestry Research Center (39? 01 ' N, 92? 46' W) near New Franklin, MO. The forages were grown in 7.5L white pots placed on light-colored gravel either under full sunlight, 45% sunlight, or 20% sunlight created by a shade cloth over a rectangular frame. Drip irrigation was...

  19. Law Enforcement Efforts to Control Domestically Grown Marijuana.

    Science.gov (United States)

    1984-05-25

    mari- juana grown indoors , the involvement of large criminal organizations, and the patterns of domestic marijuana distribution. In response to a GAO...information is particularly important if the amount of marijuana grown indoors and the number of large-scale cultiva- tion and distribution organizations... marijuana indoors is becoming increasingly popular. A 1982 narcotics assessment by the Western States Information Network (WSIN)2 of marijuana

  20. Evidence that an internal carbonic anhydrase is present in 5% CO2-grown and air-grown Chlamydomonas

    International Nuclear Information System (INIS)

    Moroney, J.V.; Togasaki, R.K.; Husic, H.D.; Tolbert, N.E.

    1987-01-01

    Inorganic carbon (C/sub i/) uptake was measured in wild-type cells of Chlamydomonas reinhardtii, and in cia-3, a mutant strain of C. reinhardtii that cannot grow with air levels of CO 2 . Both air-grown cells, that have a CO 2 concentrating system, and 5% CO 2 -grown cells that do not have this system, were used. When the external pH was 5.1 or 7.3, air-grown, wild-type cells accumulated inorganic carbon (C/sub i/) and this accumulation was enhanced when the permeant carbonic anhydrase inhibitor, ethoxyzolamide, was added. When the external pH was 5.1, 5% CO 2 -grown cells also accumulated some C/sub i/, although not as much as air-grown cells and this accumulation was stimulated by the addition of ethoxyzolamide. At the same time, ethoxyzolamide inhibited CO 2 fixation by high CO 2 -grown, wild-type cells at both pH 5.1 and 7.3. These observations imply that 5% CO 2 -grown, wild-type cells, have a physiologically important internal carbonic anhydrase, although the major carbonic anhydrase located in the periplasmic space is only present in air-grown cells. Inorganic carbon uptake by cia-3 cells supported this conclusion. This mutant strain, which is thought to lack an internal carbonic anhydrase, was unaffected by ethoxyzolamide at pH 5.1. Other physiological characteristics of cia-3 resemble those of wild-type cells that have been treated with ethoxyzolamide. It is concluded that an internal carbonic anhydrase is under different regulatory control than the periplasmic carbonic anhydrase

  1. Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

    Science.gov (United States)

    Shintri, Shashidhar S.

    Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

  2. Anisotropic Friction of Wrinkled Graphene Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Long, Fei; Yasaei, Poya; Yao, Wentao; Salehi-Khojin, Amin; Shahbazian-Yassar, Reza

    2017-06-21

    Wrinkle structures are commonly seen on graphene grown by the chemical vapor deposition (CVD) method due to the different thermal expansion coefficient between graphene and its substrate. Despite the intensive investigations focusing on the electrical properties, the nanotribological properties of wrinkles and the influence of wrinkle structures on the wrinkle-free graphene remain less understood. Here, we report the observation of anisotropic nanoscale frictional characteristics depending on the orientation of wrinkles in CVD-grown graphene. Using friction force microscopy, we found that the coefficient of friction perpendicular to the wrinkle direction was ∼194% compare to that of the parallel direction. Our systematic investigation shows that the ripples and "puckering" mechanism, which dominates the friction of exfoliated graphene, plays even a more significant role in the friction of wrinkled graphene grown by CVD. The anisotropic friction of wrinkled graphene suggests a new way to tune the graphene friction property by nano/microstructure engineering such as introducing wrinkles.

  3. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  4. Large-area, laterally-grown epitaxial semiconductor layers

    Science.gov (United States)

    Han, Jung; Song, Jie; Chen, Danti

    2017-07-18

    Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

  5. Photoluminescence study of MBE grown InGaN with intentional indium segregation

    International Nuclear Information System (INIS)

    Cheung, Maurice C.; Chen, Fei; Furis, Madalina; Cartwright, Alexander N.; Namkoong, Gon; Doolittle, W. Alan; Pudavar, Haridas E.

    2005-01-01

    Proper control of MBE growth conditions has yielded an In 0.13 Ga 0.87 N thin film sample with emission consistent with In-segregation. The photoluminescence (PL) from this epilayer showed multiple emission components. Moreover, temperature and power dependent studies of the PL demonstrated that two of the components were excitonic in nature and consistent with indium phase separation. At 15 K, time resolved PL showed a non-exponential PL decay that was well fitted with the stretched exponential solution expected for disordered systems. Consistent with the assumed carrier hopping mechanism of this model, the effective lifetime, τ, and the stretched exponential parameter, β, decrease with increasing emission energy. Finally, room temperature micro-PL using a confocal microscope showed spatial clustering of low energy emission. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Photoluminescence study of MBE grown InGaN with intentional indium segregation

    Energy Technology Data Exchange (ETDEWEB)

    Cheung, Maurice C.; Chen, Fei; Furis, Madalina; Cartwright, Alexander N. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Namkoong, Gon; Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Pudavar, Haridas E. [Department of Chemistry, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2005-05-01

    Proper control of MBE growth conditions has yielded an In{sub 0.13}Ga{sub 0.87}N thin film sample with emission consistent with In-segregation. The photoluminescence (PL) from this epilayer showed multiple emission components. Moreover, temperature and power dependent studies of the PL demonstrated that two of the components were excitonic in nature and consistent with indium phase separation. At 15 K, time resolved PL showed a non-exponential PL decay that was well fitted with the stretched exponential solution expected for disordered systems. Consistent with the assumed carrier hopping mechanism of this model, the effective lifetime, {tau}, and the stretched exponential parameter, {beta}, decrease with increasing emission energy. Finally, room temperature micro-PL using a confocal microscope showed spatial clustering of low energy emission. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. TEM and XANES study of MOVPE grown InAIN layers with different indium content

    International Nuclear Information System (INIS)

    Kret, S; Wolska, A; Klepka, M T; Letrouit, A; Ivaldi, F; Szczepańska, A; Carlin, J-F; Kaufmann, N A K; Grandjean, N

    2011-01-01

    We present structure and spatially resolved composition studies by TEM (Transmission Electron Microscopy) and XANES (X-ray Absorption Near Edge Structure) of InAIN MOVPE (Metal-Organic Vapor Phase Epitaxy) epilayers containing 16-27 at% of indium. Investigations of the In L 3 edge by synchrotron radiation absorption show a significant change of the post-edge structure depending on the indium content. We attribute this to the solubility limit and phase separation in this system. Our measurements suggest that the critical composition is 18% for our growth conditions. HRTEM cross-sectional and EDX investigations confirm such phase separation as well as the changing of the structure from 2D growth to columnar like growth for the sample with the highest indium content.

  8. Thermal behaviour of strontium tartrate single crystals grown in gel

    Indian Academy of Sciences (India)

    Unknown

    Keywords. Strontium tartrate; dopant; effect of magnetic field; thermal behaviour. 1. Introduction ... tals of such type of compounds cannot be grown by either slow evaporation or ... is observed under a stereo binocular microscope (Carl. Zeiss) and ... a depth of 1⋅8 cm due to the diffusion of the top solution. After about a week ...

  9. Nutritional diversity of leafy amaranth species grown in Kenya ...

    African Journals Online (AJOL)

    Objectives: Despite the availability of many species of amaranth in Kenya, there is inadequate information on their nutritional diversity and how they can be best used in mitigation of malnutrition. Hence, this study was aimed at investigating the nutritional diversity of five leafy amaranth species grown in Kenya. Methodology ...

  10. Annealing behavior of solution grown polyethylene single crystals

    NARCIS (Netherlands)

    Loos, J.; Tian, M.

    2006-01-01

    The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

  11. Copper and lead levels in two popular leafy vegetables grown ...

    African Journals Online (AJOL)

    A study was carried out to determine the levels of two heavy metals, Lead (Pb) and Copper (Cu), in two popular leafy vegetables grown around Morogoro Municipality in Tanzania. Vegetable samples of Pumpkin leaves ( Cucurbita moschata) and Chinese cabbage ( Brassica chinensis) were collected from three sites and ...

  12. Thermal behaviour of strontium tartrate single crystals grown in gel

    Indian Academy of Sciences (India)

    Thermal behaviour of strontium tartrate crystals grown with the aid of sodium metasilicate gel is investigated using thermogravimetry (TG) and differential thermal analysis (DTA). Effect of magnetic field and dopant (Pb)2+ on the crystal stability is also studied using thermal analysis. This study reveals that water molecules are ...

  13. Scanning tunneling microscopy of hexagonal BN grown on graphite

    International Nuclear Information System (INIS)

    Fukumoto, H.; Hamada, T.; Endo, T.; Osaka, Y.

    1991-01-01

    The microscopic surface topography of thin BN x films grown on graphite by electron cyclotron resonance plasma chemical vapor deposition have been imaged with scanning tunneling microscopy in air. The scanning tunneling microscope has generated images of hexagonal BN with atomic resolution

  14. Yield performance of cowpea plant introductions grown in calcareous soils

    Science.gov (United States)

    Cowpea or Southernpea [Vigna unguiculata (L.) Walp.] is an important legume crop used as a feed for livestock, as a green vegetable and for consumption of its dry beans which provide 22-25% protein. The crop is very sensitive to alkaline soil conditions. When grown at a soil pH of 7.5 or higher, co...

  15. Effects of irrigation strategies and soils on field grown potatoes

    DEFF Research Database (Denmark)

    Ahmadi, Seyed Hamid; Andersen, Mathias Neumann; Plauborg, Finn

    2010-01-01

    Yield and water productivity of potatoes grown in 4.32 m2 lysimeters were measured in coarse sand, loamy sand, and sandy loam and imposed to full (FI), deficit (DI), and partial root-zone drying (PRD) irrigation strategies. PRD and DI as water-saving irrigation treatments received 65% of FI after...

  16. Antioxidative properties of some phototropic microalgae grown in waste water

    DEFF Research Database (Denmark)

    Safafar, Hamed; Jacobsen, Charlotte; Møller, Peter

    for the screening and selection of the species. In this study,the potential antioxidant activities of 12 micro algal sample from Chlorella., Spirulina., Euglena, Scenedesmus and Haematococcus species grown in waste water in Kalundborg micro algal facilities were evaluated using three antioxidant assays, including...

  17. Responses of soilless grown tomato plants to arbuscular ...

    African Journals Online (AJOL)

    STORAGESEVER

    2008-10-20

    Oct 20, 2008 ... Full Length Research Paper. Responses of soilless grown tomato plants to arbuscular mycorrhizal fungal (Glomus fasciculatum) colonization in re-cycling and open systems. H. Yildiz Dasgan1*, Sebnem Kusvuran1 and Ibrahim Ortas2. 1Cukurova University, Faculty of Agriculture, Department of Horticulture ...

  18. Atomically flat platinum films grown on synthetic mica

    Science.gov (United States)

    Tanaka, Hiroyuki; Taniguchi, Masateru

    2018-04-01

    Atomically flat platinum thin films were heteroepitaxially grown on synthetic fluorophlogopite mica [KMg3(AlSi3O10)F2] by van der Waals epitaxy. Platinum films deposited on a fluorophlogopite mica substrate by inductively coupled plasma-assisted sputtering with oxygen introduction on a synthetic mica substrate resulted in the growth of twin single-crystalline epitaxial Pt(111) films.

  19. Light-emission from in-situ grown organic nanostructures

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de; Kjelstrup-Hansen, Jakob; Rubahn, Horst-Günter

    2011-01-01

    Organic crystalline nanofibers made from phenylene-based molecules exhibit a wide range of extraordinary optical properties such as intense, anisotropic and polarized luminescence that can be stimulated either optically or electrically, waveguiding and random lasing. For lighting and display...... of morphological characterization and demonstrate how appropriate biasing with an AC gate voltage enables electroluminescence from these in-situ grown organic nanostructures....

  20. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    NARCIS (Netherlands)

    Bignardi, L.; Dorp, W.F. van; Gottardi, S.; Ivashenko, O.; Dudin, P.; Barinov, A.; de Hosson, J.T.M.; Stöhr, M.; Rudolf, P.

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron

  1. Growth and yield models for Eucalyptus grandis grown in Swaziland ...

    African Journals Online (AJOL)

    The aim of this study was to develop a stand-level growth and yield model for short-rotationEucalyptus grandis grown for pulp wood production at Piggs Peak in Swaziland. The data were derived from a Nelder 1a spacing trial established with E. grandis clonal cuttings in 1998 and terminated in 2005. Planting density ...

  2. pH-sensor properties of electrochemically grown iridium oxide

    NARCIS (Netherlands)

    Olthuis, Wouter; Robben, M.A.M.; Bergveld, Piet; Bos, M.; van der Linden, W.E.

    1990-01-01

    The open-circuit potential of an electrochemically grown iridium oxide film is measured and shows a pH sensitivity between −60 and −80 mV/pH. This sensitivity is found to depend on the state of oxidation of the iridium oxide film; for a higher state of oxidation (or more of the oxide in the high

  3. Cryopreservation of in vitro -grown shoot tips of apricot ( Prunus ...

    African Journals Online (AJOL)

    In vitro grown apricot (Prunus armeniaca L.) cv. El-Hamawey shoot tips were successfully cryopreserved using an encapsulation-dehydration procedure. Shoot tips were encapsulated in calcium-alginate beads before preculture on woody plant (WP) medium supplemented with different sucrose concentrations; 0.1, 0.3, 0.5, ...

  4. 78 FR 57101 - Walnuts Grown in California; Increased Assessment Rate

    Science.gov (United States)

    2013-09-17

    ... rate currently in effect. The quantity of assessable walnuts for the 2013-14 marketing year is... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 984 [Doc. No. AMS-FV-13-0056; FV13-984-1 PR] Walnuts Grown in California; Increased Assessment Rate AGENCY: Agricultural Marketing...

  5. 75 FR 22211 - Olives Grown in California; Increased Assessment Rate

    Science.gov (United States)

    2010-04-28

    ... Executive Order 12988, Civil Justice Reform. Under the marketing order now in effect, California olive... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 932 [Doc. No. AMS-FV-09-0089; FV10-932-1 FR] Olives Grown in California; Increased Assessment Rate AGENCY: Agricultural Marketing...

  6. 76 FR 67320 - Walnuts Grown in California; Increased Assessment Rate

    Science.gov (United States)

    2011-11-01

    ... Justice Reform. Under the marketing order now in effect, California walnut handlers are subject to... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 984 [Doc. No. AMS-FV-11-0062; FV11-984-1 FR] Walnuts Grown in California; Increased Assessment Rate AGENCY: Agricultural Marketing...

  7. 77 FR 51684 - Olives Grown in California; Increased Assessment Rate

    Science.gov (United States)

    2012-08-27

    ... 12988, Civil Justice Reform. Under the marketing order now in effect, California olive handlers are... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 932 [Doc. No. AMS-FV-11-0093; FV12-932-1 FR] Olives Grown in California; Increased Assessment Rate AGENCY: Agricultural Marketing...

  8. Composition of MBE-grown iron oxide films

    NARCIS (Netherlands)

    Voogt, F.C; Hibma, T; Smulders, P.J M; Niesen, L

    A wide range of iron oxides have been grown epitaxially on MgO(100) substrates using a dual beam technique in which the deposited iron is oxidised by a beam of NO2 particles. At high fluxes magnetite (Fe3-deltaO4) phases with compositions between near-stoichiometric magnetite (Fe3O4, delta = 0) and

  9. 78 FR 77367 - Almonds Grown in California; Continuance Referendum

    Science.gov (United States)

    2013-12-23

    ... 20250-0237, or internet: regulations.gov . FOR FURTHER INFORMATION CONTACT: Maria Stobbe, Marketing... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 981 [Doc. No. AMS-FV-13-0082; FV14-981-1 CR] Almonds Grown in California; Continuance Referendum AGENCY: Agricultural Marketing...

  10. Shade periodicity affects growth of container grown dogwoods

    Science.gov (United States)

    Container-grown dogwoods rank third in the US in nursery sales of ornamental trees. However, Dogwoods are a challenging crop to produce in container culture, especially when bare root liners are used as the initial transplant into containers due unacceptable levels of mortality and poor growth. This...

  11. Phase transition of bismuth telluride thin films grown by MBE

    DEFF Research Database (Denmark)

    Fülöp, Attila; Song, Yuxin; Charpentier, Sophie

    2014-01-01

    A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation...

  12. Observation of room temperature ferromagnetism in ZnTe:Cr films grown onto glass substrate by thermal evaporation method

    Energy Technology Data Exchange (ETDEWEB)

    Soundararajan, D; Mangalaraj, D; Nataraj, D [Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore -641 046 (India); Dorosinskii, L [National Institute of Metrology (TUBITAK -UME), P.K. 54, 41470, Gebze -Kocaeli (Turkey); Santoyo-Salazar, J, E-mail: dorosins@ume.tubitak.gov.t [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico D.F. 04510 (Mexico)

    2009-03-01

    ZnTe and ZnTe:Cr films were prepared onto glass substrates using thermal evaporation method. Structural properties of the prepared samples were analyzed using X-ray diffractometer, and the presence of ZnCrTe phase was identified along with poor crystallinity. Composition analysis was done using XPS and the Cr content in the film was found to be 0.05 atomic percent. Transmittance spectra were recorded using UV-Vis spectrophotometer. The valence state of Cr in ZnTe:Cr film is determined to be +2 using electron spin resonance (ESR) spectroscopy. Magnetic moment data as a function of magnetic field were recorded using Superconducting Quantum Interference Device (SQUID) magnetometer at temperatures 5, 77 and 300 K. The results showed minority ferromagnetic behavior even at room temperature. Magnetic domains were observed using Magnetic Force Microscopy and the average value of domain size is 3.7 nm.

  13. Single layer porous gold films grown at different temperatures

    International Nuclear Information System (INIS)

    Zhang Renyun; Hummelgard, Magnus; Olin, Hakan

    2010-01-01

    Large area porous gold films can be used in several areas including electrochemical electrodes, as an essential component in sensors, or as a conducting material in electronics. Here, we report on evaporation induced crystal growth of large area porous gold films at 20, 40 and 60 deg. C. The gold films were grown on liquid surface at 20 deg. C, while the films were grown on the wall of beakers when temperature increased to 40 and 60 deg. C. The porous gold films consisted of a dense network of gold nanowires as characterized by TEM and SEM. TEM diffraction results indicated that higher temperature formed larger crystallites of gold wires. An in situ TEM imaging of the coalescence of gold nanoparticles mimicked the process of the growth of these porous films, and a plotting of the coalescence time and the neck radius showed a diffusion process. The densities of these gold films were also characterized by transmittance, and the results showed film grown at 20 deg. C had the highest density, while the film grown at 60 deg. C had the lowest consistent with SEM and TEM characterization. Electrical measurements of these gold films showed that the most conductive films were the ones grown at 40 deg. C. The conductivities of the gold films were related to the amount of contamination, density and the diameter of the gold nanowires in the films. In addition, a gold film/gold nanoparticle hybrid was made, which showed a 10% decrease in transmittance during hybridization, pointing to applications as chemical and biological sensors.

  14. Increased occurrence of pesticide residues on crops grown in protected environments compared to crops grown in open field conditions.

    Science.gov (United States)

    Allen, Gina; Halsall, Crispin J; Ukpebor, Justina; Paul, Nigel D; Ridall, Gareth; Wargent, Jason J

    2015-01-01

    Crops grown under plastic-clad structures or in greenhouses may be prone to an increased frequency of pesticide residue detections and higher concentrations of pesticides relative to equivalent crops grown in the open field. To test this we examined pesticide data for crops selected from the quarterly reports (2004-2009) of the UK's Pesticide Residue Committee. Five comparison crop pairs were identified whereby one crop of each pair was assumed to have been grown primarily under some form of physical protection ('protected') and the other grown primarily in open field conditions ('open'). For each pair, the number of detectable pesticide residues and the proportion of crop samples containing pesticides were statistically compared (n=100 s samples for each crop). The mean concentrations of selected photolabile pesticides were also compared. For the crop pairings of cabbage ('open') vs. lettuce ('protected') and 'berries' ('open') vs. strawberries ('protected') there was a significantly higher number of pesticides and proportion of samples with multiple residues for the protected crops. Statistically higher concentrations of pesticides, including cypermethrin, cyprodinil, fenhexamid, boscalid and iprodione were also found in the protected crops compared to the open crops. The evidence here demonstrates that, in general, the protected crops possess a higher number of detectable pesticides compared to analogous crops grown in the open. This may be due to different pesticide-use regimes, but also due to slower rates of pesticide removal in protected systems. The findings of this study raise implications for pesticide management in protected-crop systems. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. Growth kinetics and properties of ZnO/ZnMgO heterostructures grown by radical-source molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, S.V. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Ioffe Physico-Technical Institute, Polytekhnicheskaya Street 26, 194021 St. Petersburg (Russian Federation); El-Shaer, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Shubina, T.V.; Listoshin, S.B. [Ioffe Physico-Technical Institute, Polytekhnicheskaya Street 26, 194021 St. Petersburg (Russian Federation)

    2007-07-01

    A phenomenological approach to quantitative description of Zn(Mg)O growth by radical-source molecular beam epitaxy, based on the experimental studies of RHEED intensity oscillations, has been developed. It allows a precise control of growth rate, composition and stoichiometry at any growth temperature, Along with optimization of a growth initiation procedure on a c-sapphire, it is necessary condition for fabrication of high quality ZnO epilayers and ZnO/ZnMgO heterostructures in a wide Mg composition range. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Shock initiation experiments on ratchet grown PBX 9502

    Energy Technology Data Exchange (ETDEWEB)

    Gustavsen, Richard L [Los Alamos National Laboratory; Thompson, Darla G [Los Alamos National Laboratory; Olinger, Barton W [Los Alamos National Laboratory; Deluca, Racci [Los Alamos National Laboratory; Bartram, Brian D [Los Alamos National Laboratory; Pierce, Timothy H [Los Alamos National Laboratory; Sanchez, Nathaniel J [Los Alamos National Laboratory

    2010-01-01

    This study compares the shock initiation behavior of PBX 9502 pressed to less than nominal density (nominal density is 1.890 {+-} 0.005 g/cm{sup 3}) with PBX 9502 pressed to nominal density and then ''ratchet grown'' to low density. PBX 9502 is an insensitive plastic bonded explosive consisting of 95 weight % dry-aminated tri-amino-tri-nitro-benzene (TATB) and 5 weight % Kel-F 800 plastic binder. ''Ratchet growth'' - an irreversible increase in specific volume - occurs when an explosive based on TATB is temperature cycled. The design of our study is as follows: PBX 9502, all from the same lot, received the following four treatments. Samples in the first group were pressed to less than nominal density. These were not ratchet grown and used as a baseline. Samples in the second group were pressed to nominal density and then ratchet grown by temperature cycling 30 times between -54 C and +80 C. Samples in the final group were pressed to nominal density and cut into 100 mm by 25.4 mm diameter cylinders. During thermal cycling the cylinders were axially constrained by a 100 psi load. Samples for shock initiation experiments were cut perpendicular (disks) and parallel (slabs) to the axial load. The four sample groups can be summarized with the terms pressed low, ratchet grown/no load, axial load/disks, and axial load/slabs. All samples were shock initiated with nearly identical inputs in plate impact experiments carried out on a gas gun. Wave profiles were measured after propagation through 3, 4, 5, and 6 mm of explosive. Side by side comparison of wave profiles from different samples is used as a measure of relative sensitivity. All reduced density samples were more shock sensitive than nominal density PBX 9502. Differences in shock sensitivity between ratchet grown and pressed to low density PBX 9502 were small, but the low density pressings are slightly more sensitive than the ratchet grown samples.

  17. Large local lattice expansion in graphene adlayers grown on copper

    Science.gov (United States)

    Chen, Chaoyu; Avila, José; Arezki, Hakim; Nguyen, Van Luan; Shen, Jiahong; Mucha-Kruczyński, Marcin; Yao, Fei; Boutchich, Mohamed; Chen, Yue; Lee, Young Hee; Asensio, Maria C.

    2018-05-01

    Variations of the lattice parameter can significantly change the properties of a material, and, in particular, its electronic behaviour. In the case of graphene, however, variations of the lattice constant with respect to graphite have been limited to less than 2.5% due to its well-established high in-plane stiffness. Here, through systematic electronic and lattice structure studies, we report regions where the lattice constant of graphene monolayers grown on copper by chemical vapour deposition increases up to 7.5% of its relaxed value. Density functional theory calculations confirm that this expanded phase is energetically metastable and driven by the enhanced interaction between the substrate and the graphene adlayer. We also prove that this phase possesses distinctive chemical and electronic properties. The inherent phase complexity of graphene grown on copper foils revealed in this study may inspire the investigation of possible metastable phases in other seemingly simple heterostructure systems.

  18. Locally Grown Foods and Farmers Markets: Consumer Attitudes and Behaviors

    Directory of Open Access Journals (Sweden)

    Susan B. Smalley

    2010-03-01

    Full Text Available Farm viability poses a grave challenge to the sustainability of agriculture and food systems: the number of acres in production continues to decline as the majority of farms earn negative net income. Two related and often overlapping marketing strategies, (i locally grown foods and (ii distribution at farmers markets, can directly enhance food system sustainability by improving farm profitability and long-term viability, as well as contributing to an array of ancillary benefits. We present results of a representative Michigan telephone survey, which measured consumers’ perceptions and behaviors around local foods and farmers markets. We discuss the implications of our findings on greater farm profitability. We conclude with suggestions for future research to enhance the contributions of locally grown foods and farmers markets to overall food system sustainability.

  19. Surface oxidation phenomena of boride coatings grown on iron

    International Nuclear Information System (INIS)

    Carbucicchio, M.; Palombarini, G.; Sambogna, G.

    1992-01-01

    Very hard boride coatings are grown on various metals using thermochemical as well as chemical vapour deposition techniques. In this way many surface properties, and in particular the wear resistance, can be considerably improved. Usually, also the corrosion behaviour of the treated components is important. In particular, oxidizing atmospheres are involved in many applications where, therefore, coating-environment interactions can play a relevant role. In a previous work, the early stages of the oxidation of iron borides were studied by treating single phase compacted powders in flowing oxygen at low temperatures (300-450deg C). In the present paper, the attention is addressed to the oxidation of both single phase and polyphase boride coatings thermochemically grown on iron. The single phase boride coatings were constituted by Fe 2 B, while the polyphase coatings were constituted by an inner Fe 2 B layer and an outer FeB-base layer. All the boride layers displayed strong (002) preferred crystallographic orientations. (orig.)

  20. X-ray diffraction study of directionally grown perylene crystallites

    DEFF Research Database (Denmark)

    Breiby, Dag W.; Lemke, H. T.; Hammershøj, P.

    2008-01-01

    Using grazing incidence X-ray diffraction, perylene crystallites grown on thin highly oriented poly(tetrafluoroethylene) (PTFE) films on silicon substrates have been investigated. All the perylene crystallites are found to orient with the ab plane of the monoclinic unit cell parallel to the subst......Using grazing incidence X-ray diffraction, perylene crystallites grown on thin highly oriented poly(tetrafluoroethylene) (PTFE) films on silicon substrates have been investigated. All the perylene crystallites are found to orient with the ab plane of the monoclinic unit cell parallel...... to the substrate. The scattering data is interpreted as a trimodal texture of oriented perylene crystallites, induced by interactions between the perylene molecules and the oriented PTFE substrate. Three families of biaxial orientations are seen, with the axes (h = 1, 2, or 3) parallel to the PTFE alignment......, all having the ab-plane parallel to the substrate. About 92% of the scattered intensity corresponds to a population with highly parallel to (PTFE)....

  1. Nanophotonic integrated circuits from nanoresonators grown on silicon.

    Science.gov (United States)

    Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

    2014-07-07

    Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

  2. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  3. Present and future applications of magnetic nanostructures grown by FEBID

    Energy Technology Data Exchange (ETDEWEB)

    Teresa, J.M. de [CSIC-Universidad de Zaragoza, Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon (ICMA), Saragossa (Spain); Universidad de Zaragoza, Laboratorio de Microscopias Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA), Saragossa (Spain); Fernandez-Pacheco, A. [University of Cambridge, TFM Group, Cavendish Laboratory, Cambridge (United Kingdom)

    2014-12-15

    Currently, magnetic nanostructures are routinely grown by focused electron beam induced deposition (FEBID). In the present article, we review the milestones produced in the topic in the past as well as the future applications of this technology. Regarding past milestones, we highlight the achievement of high-purity cobalt and iron deposits, the high lateral resolution obtained, the growth of 3D magnetic deposits, the exploration of magnetic alloys and the application of magnetic deposits for Hall sensing and in domain-wall conduit and magnetologic devices. With respect to future perspectives of the topic, we emphasize the potential role of magnetic nanostructures grown by FEBID for applications related to highly integrated 2D arrays, 3D nanowires devices, fabrication of advanced scanning-probe systems, basic studies of magnetic structures and their dynamics, small sensors (including biosensors) and new applications brought by magnetic alloys and even exchange biased systems. (orig.)

  4. Photoemission electronic states of epitaxially grown magnetite films

    International Nuclear Information System (INIS)

    Zalecki, R.; Kolodziejczyk, A.; Korecki, J.; Spiridis, N.; Zajac, M.; Kozlowski, A.; Kakol, Z.; Antolak, D.

    2007-01-01

    The valence band photoemission spectra of epitaxially grown 300 A single crystalline magnetite films were measured by the angle-resolved ultraviolet photoemission spectroscopy (ARUPS) at 300 K. The samples were grown either on MgO(0 0 1) (B termination) or on (0 0 1) Fe (iron-rich A termination), thus intentionally presenting different surface stoichiometry, i.e. also different surface electronic states. Four main features of the electron photoemission at about -1.0, -3.0, -5.5 and -10.0 eV below a chemical potential show systematic differences for two terminations; this difference depends on the electron outgoing angle. Our studies confirm sensitivity of angle resolved PES technique on subtleties of surface states

  5. Factors Affecting Isoflavone Content in Soybean Seeds Grown in Thailand

    OpenAIRE

    Teekachunhatean, Supanimit; Hanprasertpong, Nutthiya; Teekachunhatean, Thawatchai

    2013-01-01

    Soybeans are the most common source of isoflavones in human foods. The objectives of this study were to determine the effects of Thai soybean variety, planting date, physical seed quality, storage condition, planting location, and crop year on isoflavone content, as well as to analyze the relationship between seed viability and isoflavone content in soybean seeds grown in Thailand. Isoflavone content in Thai soybeans varied considerably depending on such factors as variety, physical seed qual...

  6. Polyol concentrations in Aspergillus repens grown under salt stress.

    Science.gov (United States)

    Kelavkar, U P; Chhatpar, H S

    1993-09-01

    Na(+), K(+) and the ratio of Na(+)/K(+) were higher in cells of the halotolerant Aspergillus repens grown with 2 M NaCl than without NaCl. The osmolytes, proline, glycerol, betaine and glutamate, did not affect the Na(+)/K(+) ratio, nor the polyol content of cells under any conditions. The concentrations of polyols, consisting of glycerol, arabitol, erythritol and mannitol, changed markedly during growth, indicating that they have a crucial role in osmotic adaptation.

  7. Nano transfer and nanoreplication using deterministically grown sacrificial nanotemplates

    Science.gov (United States)

    Melechko, Anatoli V [Oak Ridge, TN; McKnight, Timothy E [Greenback, TN; Guillorn, Michael A [Ithaca, NY; Ilic, Bojan [Ithaca, NY; Merkulov, Vladimir I [Knoxville, TX; Doktycz, Mitchel J [Knoxville, TN; Lowndes, Douglas H [Knoxville, TN; Simpson, Michael L [Knoxville, TN

    2012-03-27

    Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. An apparatus, includes a substrate and a nanoconduit material coupled to a surface of the substrate. The substrate defines an aperture and the nanoconduit material defines a nanoconduit that is i) contiguous with the aperture and ii) aligned substantially non-parallel to a plane defined by the surface of the substrate.

  8. Spectral response of THM grown CdZnTe crystals

    DEFF Research Database (Denmark)

    Chen, H.; Awadalla, S.A.; Harris, F.

    2008-01-01

    The spectral response of several crystals grown by the Traveling Heater Method (THM) were investigated. An energy resolution of 0.98% for a Pseudo Frisch-Grid of 4 × 4 × 9 mm3 and 2.1% FWHM for a coplanar-grid of size 11 × 11 × 5 mm3 were measured using 137Cs-662 keV. In addition a 4% FWHM at 122...

  9. Electrolytic coloration of air-grown sodium fluoride crystals

    International Nuclear Information System (INIS)

    Gu Hongen; Han Li; Song Cuiying; Guo Meili; Wang Na

    2007-01-01

    Air-grown sodium fluoride crystals were colored electrolytically by using a pointed cathode at various temperatures and electric field strengths, which should mainly benefit appropriate coloration temperatures and electric field strengths. O 2 - , F, M, N 1 , N 2 color centers and O 2- -F + complexes were produced in the colored crystals. Current-time curves for the electrolytic colorations were given, and activation energy for the V color center migration was determined. The formation of the color centers was explained

  10. Developmental, nutritional and hormonal anomalies of weightlessness-grown wheat

    Science.gov (United States)

    Carman, J. G.; Hole, P.; Salisbury, F. B.; Bingham, G. E.

    2015-07-01

    The behavior of water in weightlessness, as occurs in orbiting spacecraft, presents multiple challenges for plant growth. Soils remain saturated, impeding aeration, and leaf surfaces remain wet, impeding gas exchange. Herein we report developmental and biochemical anomalies of "Super Dwarf" wheat (Triticum aestivum L.) grown aboard Space Station Mir during the 1996-97 "Greenhouse 2" experiment. Leaves of Mir-grown wheat were hyperhydric, senesced precociously and accumulated aromatic and branched-chain amino acids typical of tissues experiencing oxidative stress. The highest levels of stress-specific amino acids occurred in precociously-senescing leaves. Our results suggest that the leaf ventilation system of the Svet Greenhouse failed to remove sufficient boundary layer water, thus leading to poor gas exchange and onset of oxidative stress. As oxidative stress in plants has been observed in recent space-flight experiments, we recommend that percentage water content in apoplast free-spaces of leaves be used to evaluate leaf ventilation effectiveness. Mir-grown plants also tillered excessively. Crowns and culms of these plants contained low levels of abscisic acid but high levels of cytokinins. High ethylene levels may have suppressed abscisic acid synthesis, thus permitting cytokinins to accumulate and tillering to occur.

  11. Accumulation of heavy metals by vegetables grown in mine wastes

    Energy Technology Data Exchange (ETDEWEB)

    Cobb, G.P.; Sands, K.; Waters, M.; Wixson, B.G.; Dorward-King, E.

    2000-03-01

    Lead, cadmium, arsenic, and zinc were quantified in mine wastes and in soils mixed with mine wastes. Metal concentrations were found to be heterogeneous in the wastes. Iceberg lettuce, Cherry Belle radishes, Roma bush beans, and Better Boy tomatoes were cultivated in mine wastes and in waste-amended soils. Lettuce and radishes had 100% survival in the 100% mine waste treatments compared to 0% and 25% survival for tomatoes and beans, respectively. Metal concentrations were determined in plant tissues to determine uptake and distribution of metals in the edible plant parts. Individual soil samples were collected beneath each plant to assess metal content in the immediate plant environment. This analysis verified heterogeneous metal content of the mine wastes. The four plant species effectively accumulated and translocated lead, cadmium, arsenic, and zinc. Tomato and bean plants contained the four metals mainly in the roots and little was translocated to the fruits. Radish roots accumulated less metals compared to the leaves, whereas lettuce roots and leaves accumulated similar concentrations of the four metals. Lettuce leaves and radish roots accumulated significantly more metals than bean and tomato fruits. This accumulation pattern suggests that consumption of lettuce leaves or radish roots from plants grown in mine wastes would pose greater risks to humans and wildlife than would consumption of beans or tomatoes grown in the same area. The potential risk may be mitigated somewhat in humans, as vegetables grown in mine wastes exhibited stunted growth and chlorosis.

  12. Expression of virulence factors by Staphylococcus aureus grown in serum.

    Science.gov (United States)

    Oogai, Yuichi; Matsuo, Miki; Hashimoto, Masahito; Kato, Fuminori; Sugai, Motoyuki; Komatsuzawa, Hitoshi

    2011-11-01

    Staphylococcus aureus produces many virulence factors, including toxins, immune-modulatory factors, and exoenzymes. Previous studies involving the analysis of virulence expression were mainly performed by in vitro experiments using bacterial medium. However, when S. aureus infects a host, the bacterial growth conditions are quite different from those in a medium, which may be related to the different expression of virulence factors in the host. In this study, we investigated the expression of virulence factors in S. aureus grown in calf serum. The expression of many virulence factors, including hemolysins, enterotoxins, proteases, and iron acquisition factors, was significantly increased compared with that in bacterial medium. In addition, the expression of RNA III, a global regulon for virulence expression, was significantly increased. This effect was partially restored by the addition of 300 μM FeCl₃ into serum, suggesting that iron depletion is associated with the increased expression of virulence factors in serum. In chemically defined medium without iron, a similar effect was observed. In a mutant with agr inactivated grown in serum, the expression of RNA III, psm, and sec4 was not increased, while other factors were still induced in the mutant, suggesting that another regulatory factor(s) is involved. In addition, we found that serum albumin is a major factor for the capture of free iron to prevent the supply of iron to bacteria grown in serum. These results indicate that S. aureus expresses virulence factors in adaptation to the host environment.

  13. InN-based layers grown by modified HVPE

    International Nuclear Information System (INIS)

    Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Davydov, V.; Nikishin, S.; Kuryatkov, V.; Song, D.; Rosenbladt, D.; Holtz, Mark

    2006-01-01

    This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 and ordm;C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002)InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano-rods and 460 arcsec for the continuous layers. In x Ga 1-x N layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Assessing biodiesel quality parameters for wastewater grown Chlorella sp.

    Science.gov (United States)

    Bagul, Samadhan Yuvraj; K Bharti, Randhir; Dhar, Dolly Wattal

    2017-07-01

    Microalgae are reported as the efficient source of renewable biodiesel which should be able to meet the global demand of transport fuels. Present study is focused on assessment of wastewater grown indigenous microalga Chlorella sp. for fuel quality parameters. This was successfully grown in secondary treated waste water diluted with tap water (25% dilution) in glass house. The microalga showed a dry weight of 0.849 g L -1 with lipid content of 27.1% on dry weight basis on 21st day of incubation. After transesterification, the yield of fatty acid methyl ester was 80.64% with major fatty acids as palmitic, linoleic, oleic and linolenic. The physical parameters predicted from empirical equations in the biodiesel showed cetane number as 56.5, iodine value of 75.5 g I 2 100 g -1 , high heating value 40.1 MJ kg -1 , flash point 135 °C, kinematic viscosity 4.05 mm 2 s -1 with density of 0.86 g cm 3 and cold filter plugging point as 0.7 °C. Fourier transform infra-red (FTIR), 1 H, 13 C NMR spectrum confirmed the chemical nature of biodiesel. The results indicated that the quality of biodiesel was almost as per the criterion of ASTM standards; hence, wastewater grown Chlorella sp. can be used as a promising strain for biodiesel production.

  15. Alfalfa seedlings grown outdoors are more resistant to UV-induced DNA damage than plants grown in a UV-free environmental chamber

    International Nuclear Information System (INIS)

    Takayanagi, Shinnosuke; Trunk, J.G.; Sutherland, J.C.; Sutherland, B.M.

    1994-01-01

    The relative UV sensitivities of alfalfa seedlings grown outdoors versus plants grown in a growth chamber under UV-filtered cool white fluorescent bulbs have been determined using three criteria: (1) level of endogenous DNA damage as sites for the UV endonuclease from Micrococcus luteus, (2) susceptibility to pyrimidine dimer induction by a UV challenge exposure and (3) ability to repair UV-induced damage. We find that outdoor-grown plants contain approximately equal frequencies of endogenous DNA damages, are less susceptible to dimer induction by a challenge exposure of broad-spectrum UV and photorepair dimers more rapidly than plants grown in an environmental chamber under cool white fluorescent lamps plus a filter removes most UV radiation. These data suggest that plants grown in a natural environment would be less sensitive to UVB-induced damage than would be predicted on the basis of studies on plants grown under minimum UV. (author)

  16. 78 FR 28118 - Vidalia Onions Grown in Georgia; Change in Reporting and Assessment Requirements

    Science.gov (United States)

    2013-05-14

    ... onion producers in the designated production area. Small agricultural service firms, which include...; FV13-955-1 IR] Vidalia Onions Grown in Georgia; Change in Reporting and Assessment Requirements AGENCY... Vidalia onions grown in Georgia (order). The order regulates the handling of Vidalia onions grown in...

  17. Leaf chemical composition of twenty-one Populus hybrid clones grown under intensive culture

    Science.gov (United States)

    Richard E. Dickson; Philip R. Larson

    1976-01-01

    Leaf material from 21 nursery-grown Populus hybrid clones was analyzed for three nitrogen fractions (total N, soluble protein, and soluble amino acids) and three carbhydrate fractions (reducing sugars, total soluble sugars, and total nonstructural carbohydrates-TNC). In addition, nursery-grown green ash and silver maple, field-grown bigtooth and trembling aspen, and...

  18. Response of container-grown flowering dogwood cultivars to sun/shade production regime, 2015

    Science.gov (United States)

    Flowering dogwood, Cornus florida, ‘Cherokee Brave™’ and ‘Cherokee Princess’ were grown in #5 nursery containers in an amended 100% bark substrate. Treatments were assigned based on exposure time to a full sun/shade condition during the growing season: 1) plants grown in full sun, 2) plants grown in...

  19. Polyphenol content and antioxidant capacity in organically and conventionally grown vegetables

    Directory of Open Access Journals (Sweden)

    Kevser Unal

    2014-11-01

    Full Text Available Objective: To evaluate the polyphenol content and antioxidant capacity of ethanol extracts of some organically and conventionally grown leafy vegetables. Methods: The ethanol extracts of kailan (Brassica alboglabra, bayam (Amaranthus spp. and sawi (Brassica parachinensis were tested for total phenolic content (TPC, total flavonoid content (TFC, and total anthocyanin content (TAC and the antioxidant capacity of the extracts measured using 2,2-diphenyl-1-picrylhydrazyl assay. Results: In TPC test, sawi extract showed the highest phenolic content while bayam contained the least phenolic content for both organically and conventionally grown types. In TFC test, organically grown sawi extract showed the highest flavonoid content, while organically grown kailan extract showed the least flavonoid content among all types of vegetables. The flavonoid content of the conventionally grown types of vegetable extracts was the highest in kalian and the least in sawi. For 2,2-diphenyl-1-picrylhydrazyl radical scavenging activity, the activity increased with the increasing concentration of each extract. All conventionally grown vegetable extracts showed higher antioxidant activity compared to their organically grown counterparts. Extracts of conventionally grown sawi showed the highest percentage inhibition followed by conventionally grown kailan and organically grown sawi. There were no correlation between TPC, TFC, TAC and IC25 of both organically and conventionally grown vegetables. However, there was a correlation between TAC and IC25 of conventionally grown vegetable extracts. The results showed relatively similar polyphenol content between organically and conventionally grown vegetable extracts. However, the conventionally grown vegetables extracts generally have higher antioxidant activity compared to the organically grown extracts. Conclusions: These results suggested that the different types of agricultural practice had a significant contribution to the

  20. Synthesis and Secretion of Isoflavones by Field-Grown Soybean.

    Science.gov (United States)

    Sugiyama, Akifumi; Yamazaki, Yumi; Hamamoto, Shoichiro; Takase, Hisabumi; Yazaki, Kazufumi

    2017-09-01

    Isoflavones play important roles in rhizosphere plant-microbe interactions. Daidzein and genistein secreted by soybean roots induce the symbiotic interaction with rhizobia and may modulate rhizosphere interactions with microbes. Yet despite their important roles, little is known about the biosynthesis, secretion and fate of isoflavones in field-grown soybeans. Here, we analyzed isoflavone contents and the expression of isoflavone biosynthesis genes in field-grown soybeans. In roots, isoflavone contents and composition did not change with crop growth, but the expression of UGT4, an isoflavone-specific 7-O-glucosyltransferase, and of ICHG (isoflavone conjugates hydrolyzing beta-glucosidase) was decreased during the reproductive stages. Isoflavone contents were higher in rhizosphere soil than in bulk soil during both vegetative and reproductive stages, and were comparable in the rhizosphere soil between these two stages. We analyzed the degradation dynamics of daidzein and its glucosides to develop a model for predicting rhizosphere isoflavone contents from the amount of isoflavones secreted in hydroponic culture. Conjugates of daidzein were degraded much faster than daidzein, with degradation rate constants of 8.51 d-1 for malonyldaidzin and 11.6 d-1 for daidzin, vs. 9.15 × 10-2 d-1 for daidzein. The model suggested that secretion of isoflavones into the rhizosphere is higher during vegetative stages than during reproductive stages in field-grown soybean. © The Author 2017. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.

  1. InN layers grown by the HVPE

    International Nuclear Information System (INIS)

    Syrkin, A.L.; Ivantsov, V.; Usikov, A.; Dmitriev, V.A.; Chambard, G.; Ruterana, P.; Davydov, A.V.; Sundaresan, S.G.; Lutsenko, E.; Mudryi, A.V.; Readinger, E.D.; Chern-Metcalfe, G.D.; Wraback, M.

    2008-01-01

    We report on the properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on HVPE InN template substrates. InN layers were grown by HVPE on GaN/sapphire HVPE templates. The (00.2) XRD rocking curve of the best InN layer (RC) had the FWHM of about 375 arc sec, being the narrowest XRD RCs ever reported for HVPE InN. Transmission Electron Microscopy (TEM) revealed that at the GaN/InN interface, the threading dislocations that come from GaN were transmitted into the InN layer. We estimated the dislocation density in HVPE grown InN to be in the low 10 9 cm -2 range. Reflection high energy electron diffraction (RHEED) confirmed monocrystalline structure of the InN layers surface. Layers photoluminescence (PL) showed edge emission around 0.8 eV. Hall measured free electron concentration was in the range of 10 19 -10 20 cm -3 and electron mobility was ∝200 cm 2 /V s. MBE growth of InN was performed on the HVPE grown InN template substrate demonstrating the improvement of material quality in the case of homo-epitaxial growth of InN. Demonstration of the high quality HVPE InN materials opens a new way for InN substrate development. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Spherical Nb single crystals containerlessly grown by electrostatic levitation

    International Nuclear Information System (INIS)

    Sung, Y.S.; Takeya, H.; Hirata, K.; Togano, K.

    2003-01-01

    Spherical Nb (T m =2750 K) single crystals were grown via containerless electrostatic levitation (ESL). Samples became spherical at melting in levitation and undercooled typically 300-450 K prior to nucleation. As-processed samples were still spherical without any macroscopic shape change by solidification showing a uniform dendritic surface morphology. Crystallographic {111} planes exposed in equilateral triangular shapes on the surface by preferential macroetching and spotty back-reflection Laue patterns confirm the single crystal nature of the ESL-processed Nb samples. No hysteresis in magnetization between zero field and field cooling also implies a clean defect-free condition of the spherical Nb single crystals

  3. Optical transparency of graphene layers grown on metal surfaces

    International Nuclear Information System (INIS)

    Rut’kov, E. V.; Lavrovskaya, N. P.; Sheshenya, E. S.; Gall, N. R.

    2017-01-01

    It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.

  4. Loose smut of barley grown in three types of farming

    Directory of Open Access Journals (Sweden)

    T. Nedelcheva

    2016-09-01

    Full Text Available Abstract. Over the period of 2014-2015, on the experimental field of the Institute of Agriculture in Karnobat, Bulgaria, was set a field trial with twenty cultivars of barley – 15 two-row: Obzor, Emon, Perun, Orfey, Lardeya, Asparuh, Kuber, Zagorets, Imeon, Sayra, Devinya, Sitara, Krami, Vicky, Potok; 3 four-row: Veslets, Aheloy 2, Tamaris; and 2 six-row cultivars – IZ Bori and Bozhin. All the cultivars were grown in three types of farming: conventional, organic and biodynamic. In conventional farming were applied pesticides and nitrogen fertilization. In the organic production were not used pesticides, mineral and organic fertilizers; and in biodynamic farming was applied biodynamic compost prepared from manure and biodynamic preparations (also organic. In conventional farming, the seeds were disinfected before sowing with Kinto plus (Triticonazole 20 g/l + Prochloraz 60 g/l, at a rate of 150 ml/100 kg seeds. In organic and biodynamic farming were used nondisinfected seeds. In the phenophase of full maturity of barley was conducted monitoring survey for plants infected with loose smut in all 2 the trial variants, the number of infected plants per m were counted and the infection rates were calculated. Infected plants of Tamaris grown in the three types of farming underwent microscopic analysis and measurement of 100 teliospores from each variant. The aim of this experiment was to investigate varietal susceptibility of barley to Ustilago nuda, grown in three types of farming, and to establish if the growing method affects the size of the teliospores of the pathogen. With two-row barley were found plants of Lardeya, Kuber, Devinya, Krami and Vicky infected with Ustilago nuda. Krami manifested the lowest resistance in the three types of farming. With four-row barley, Tamaris was found to be highly susceptible and Veslets was poorly resistant. Both cultivars expressed weaker susceptibility in conventional and biodynamic farming and stronger in

  5. The uptake of 131I by some hydroponically grown crops

    International Nuclear Information System (INIS)

    Asprer, G.A.; Lansangan, L.M.; de la Paz, L.R.

    1982-01-01

    Biologically labelled vegetables which include kangkong and sweet potato tops were grown hydroponically in a modified Hoagland-Arnon nutrient solution containing radioiodine with 0.5% non-radioactive Nal solution as the medium. The crops considered in this study are commonly eaten by Filipinos. The concentration of the solution as well as the uptake in the plant system were determined at various time intervals. The extent of radioiodine uptake through air-water-plant pathway is one of the parameters needed for calculating the dose that the general populace could be exposed to, due to radioactivity in the environment. (author)

  6. Defects in zinc oxide grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2016-01-01

    ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

  7. Optical transparency of graphene layers grown on metal surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Rut’kov, E. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lavrovskaya, N. P. [State University of Aerospace Instrumentation (Russian Federation); Sheshenya, E. S., E-mail: sheshenayket@gmail.ru; Gall, N. R. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-04-15

    It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.

  8. Factors Affecting Isoflavone Content in Soybean Seeds Grown in Thailand

    Directory of Open Access Journals (Sweden)

    Supanimit Teekachunhatean

    2013-01-01

    Full Text Available Soybeans are the most common source of isoflavones in human foods. The objectives of this study were to determine the effects of Thai soybean variety, planting date, physical seed quality, storage condition, planting location, and crop year on isoflavone content, as well as to analyze the relationship between seed viability and isoflavone content in soybean seeds grown in Thailand. Isoflavone content in Thai soybeans varied considerably depending on such factors as variety, physical seed quality, crop year, planting date (even in the same crop year, and planting location. Most varieties (except for Nakhon Sawan 1 and Sukhothai 1 had significantly higher isoflavone content when planted in early rather than in late dry season. Additionally, seed viability as well as long-term storage at 10∘C or at ambient condition seemed unlikely to affect isoflavone content in Thai soybean varieties. Isoflavone content in soybean seeds grown in Thailand depends on multiple genetic and environmental factors. Some varieties (Nakhon Sawan 1 and Sukhothai 1 exhibited moderately high isoflavone content regardless of sowing date. Soybeans with decreased seed viability still retained their isoflavone content.

  9. Pb-210 in beans grown in normal background environments

    International Nuclear Information System (INIS)

    Mingote, Raquel M.; Nogueira, Regina A.

    2013-01-01

    A survey was carried out on the activity concentration of 210 Pb in common beans (Phaseolus vulgaris L.) grown in normal background environments in Brazil. The Carioca beans and the black type were analyzed, which contribute with 90% of the Brazilian market share of the common beans. To this study 18 bean samples sowing in the Middle-Western and Southern regions of Brazil during the years 2010-2011 were analyzed. The proportion per bean type was similar to the national production: most of the Carioca beans (n=13; 72%) and black beans (n=5; 28%). Other 17 values of 210 Pb activity concentration in beans grown in Southeastern region available in the GEORAD, a dataset of radioactivity in Brazil, were added to the statistic analysis of the data. Considering the information contained in censored observations (60%), representative value of 210 Pb activity concentration in beans was estimated by using robust ROS, a censored data analysis method. The value 0.047 Bq kg -1 fresh wt. obtained here is according to 210 Pb activity concentration in grains reported by UNSCEAR 0.05 Bq kg -1 . (author)

  10. Food Value of Mealworm Grown on Acrocomia aculeata Pulp Flour

    Science.gov (United States)

    Alves, Ariana Vieira; Sanjinez-Argandoña, Eliana Janet; Linzmeier, Adelita Maria; Cardoso, Claudia Andrea Lima; Macedo, Maria Lígia Rodrigues

    2016-01-01

    Insects have played an important role as human food throughout history, especially in Africa, Asia and Latin America. A good example of edible insects is the mealworm, Tenebrio molitor Linnaeus, 1758 (Coleoptera, Tenebrionidae), which are eaten in Africa, Asia, the Americas and Australia. This species is easily bred in captivity, requiring simple management. The bocaiuva (Acrocomia aculeata (Jacq.) Lodd) is an abundant palm tree found in the Brazilian Cerrado, providing fruits with high nutritional value. The aim of this work was to determine the chemical composition of T. molitor grown in different artificial diets with bocaiuva pulp flour. The nutritional composition, fatty acid composition, antioxidant activity, trypsin activity and anti-nutritional factors of larvae were analyzed. The results showed that mealworms grown on artificial diet with bocaiuva are a good source of protein (44.83%) and lipid (40.45%), with significant levels of unsaturated fatty acids (65.99%), antioxidant activity (4.5 μM Trolox/g of oil extracted from larvae) and absence of anti-nutritional factors. This study indicates a new source of biomass for growing mealworms and shows that it is possible to breed mealworms in artificial diet with bocaiuva flour without compromising the nutritional quality of the larvae. PMID:26974840

  11. Food Value of Mealworm Grown on Acrocomia aculeata Pulp Flour.

    Directory of Open Access Journals (Sweden)

    Ariana Vieira Alves

    Full Text Available Insects have played an important role as human food throughout history, especially in Africa, Asia and Latin America. A good example of edible insects is the mealworm, Tenebrio molitor Linnaeus, 1758 (Coleoptera, Tenebrionidae, which are eaten in Africa, Asia, the Americas and Australia. This species is easily bred in captivity, requiring simple management. The bocaiuva (Acrocomia aculeata (Jacq. Lodd is an abundant palm tree found in the Brazilian Cerrado, providing fruits with high nutritional value. The aim of this work was to determine the chemical composition of T. molitor grown in different artificial diets with bocaiuva pulp flour. The nutritional composition, fatty acid composition, antioxidant activity, trypsin activity and anti-nutritional factors of larvae were analyzed. The results showed that mealworms grown on artificial diet with bocaiuva are a good source of protein (44.83% and lipid (40.45%, with significant levels of unsaturated fatty acids (65.99%, antioxidant activity (4.5 μM Trolox/g of oil extracted from larvae and absence of anti-nutritional factors. This study indicates a new source of biomass for growing mealworms and shows that it is possible to breed mealworms in artificial diet with bocaiuva flour without compromising the nutritional quality of the larvae.

  12. Gene expression from plants grown on the International Space Station

    Science.gov (United States)

    Stimpson, Alexander; Pereira, Rhea; Kiss, John Z.; Correll, Melanie

    Three experiments were performed on the International Space Station (ISS) in 2006 as part of the TROPI experiments. These experiments were performed to study graviTROPIsm and photoTROPIsm responses of Arabidopsis in microgravity (µg). Seedlings were grown with a variety of light and gravitational treatments for approximately five days. The frozen samples were returned to Earth during three space shuttle missions in 2007 and stored at -80° C. Due to the limited amount of plant biomass returned, new protocols were developed to minimize the amount of material needed for RNA extraction as a preparation for microarray analysis. Using these new protocols, RNA was extracted from several sets of seedlings grown in red light followed by blue light with one sample from 1.0g treatment and the other at µg. Using a 2-fold change criterion, microarray (Affymetrix, GeneChip) results showed that 613 genes were upregulated in the µg sample while 757 genes were downregulated. Upregulated genes in response to µg included transcription factors from the WRKY (15 genes), MYB (3) and ZF (8) families as well as those that are involved in auxin responses (10). Downregulated genes also included transcription factors such as MYB (5) and Zinc finger (10) but interestingly only two WRKY family genes were down-regulated during the µg treatment. Studies are underway to compare these results with other samples to identify the genes involved in the gravity and light signal transduction pathways (this project is Supported By: NASA NCC2-1200).

  13. Pb-210 in beans grown in normal background environments

    Energy Technology Data Exchange (ETDEWEB)

    Mingote, Raquel M.; Nogueira, Regina A., E-mail: mingote@cnen.gov.br, E-mail: rnogueira@cnen.gov.br [Centro Regional de Ciencias Nucleares do Centro-Oeste (CRCN-CO/CNEN-GO), Abadia de Goias, GO (Brazil)

    2013-07-01

    A survey was carried out on the activity concentration of {sup 210}Pb in common beans (Phaseolus vulgaris L.) grown in normal background environments in Brazil. The Carioca beans and the black type were analyzed, which contribute with 90% of the Brazilian market share of the common beans. To this study 18 bean samples sowing in the Middle-Western and Southern regions of Brazil during the years 2010-2011 were analyzed. The proportion per bean type was similar to the national production: most of the Carioca beans (n=13; 72%) and black beans (n=5; 28%). Other 17 values of {sup 210}Pb activity concentration in beans grown in Southeastern region available in the GEORAD, a dataset of radioactivity in Brazil, were added to the statistic analysis of the data. Considering the information contained in censored observations (60%), representative value of {sup 210}Pb activity concentration in beans was estimated by using robust ROS, a censored data analysis method. The value 0.047 Bq kg{sup -1} fresh wt. obtained here is according to {sup 210}Pb activity concentration in grains reported by UNSCEAR 0.05 Bq kg{sup -1}. (author)

  14. Weak localization behavior observed in graphene grown on germanium substrate

    Directory of Open Access Journals (Sweden)

    Yinbo Sun

    2018-04-01

    Full Text Available Two dimensional electron systems (2DES usually show the weak localization behavior in consequence of electron interaction in the limited dimension. Distinct from other 2DES, the monolayer graphene, due to the chirality, exhibits unique weak localization behavior sensitive to not only inelastic but also elastic carrier scattering. Grain boundaries, which usually exist in monolayer graphene, are apparently related to the elastic carrier scattering process, thus affecting the weak localization behavior. However, their effect is scarcely studied due to the lack of an ideal platform. Here, a complementary system consisting of both single-crystalline graphene grown on Ge (110 and poly-crystalline graphene grown on Ge (111 is constructed. From the comparison of magnetoresistivity measurements, the weak localization effect is found to be greatly enhanced for the poly-crystalline graphene on Ge(111 compared to the single-crystalline graphene on Ge(110. The degraded transport performance in graphene/Ge(111 is due to the presence of grain boundary in poly-crystalline graphene, which results in the enhanced elastic intervalley scattering. In addition, the inelastic scattering originating from the strong electron-electron interaction at low temperature also contributes to weak localization of poly-crystalline graphene/Ge(111.

  15. Food Value of Mealworm Grown on Acrocomia aculeata Pulp Flour.

    Science.gov (United States)

    Alves, Ariana Vieira; Sanjinez-Argandoña, Eliana Janet; Linzmeier, Adelita Maria; Cardoso, Claudia Andrea Lima; Macedo, Maria Lígia Rodrigues

    2016-01-01

    Insects have played an important role as human food throughout history, especially in Africa, Asia and Latin America. A good example of edible insects is the mealworm, Tenebrio molitor Linnaeus, 1758 (Coleoptera, Tenebrionidae), which are eaten in Africa, Asia, the Americas and Australia. This species is easily bred in captivity, requiring simple management. The bocaiuva (Acrocomia aculeata (Jacq.) Lodd) is an abundant palm tree found in the Brazilian Cerrado, providing fruits with high nutritional value. The aim of this work was to determine the chemical composition of T. molitor grown in different artificial diets with bocaiuva pulp flour. The nutritional composition, fatty acid composition, antioxidant activity, trypsin activity and anti-nutritional factors of larvae were analyzed. The results showed that mealworms grown on artificial diet with bocaiuva are a good source of protein (44.83%) and lipid (40.45%), with significant levels of unsaturated fatty acids (65.99%), antioxidant activity (4.5 μM Trolox/g of oil extracted from larvae) and absence of anti-nutritional factors. This study indicates a new source of biomass for growing mealworms and shows that it is possible to breed mealworms in artificial diet with bocaiuva flour without compromising the nutritional quality of the larvae.

  16. 2-undecanone and 2-tridecanone in field-grown onion.

    Science.gov (United States)

    Antonious, George F

    2013-01-01

    A field study was conducted to investigate the impact of soil amendments on concentrations of two volatile organic compounds, 2-undecanone and 2-tridecanone, in onion bulbs. The soil in five plots was mixed with sewage sludge, five plots were mixed with yard waste compost, five plots were mixed with laying hen manure each at 15 t acre(-1), and five unamended plots that never received soil amendments were used for comparison purposes. Plots (n = 20) were planted with onion, Allium cepa L. var. Super Star-F1 bulbs. Gas chromatographic/mass spetrometric (GC/MS) analyses of mature onion bulbs crude extracts revealed the presence of two major fragment ions that correspond to 2-undecanone and 2-tridecanone. Soil amended with yard waste compost enhanced 2-undecanone and 2-tridecanone production by 31 and 59%, respectively. Soil amended with chicken manure enhanced 2-undecanone and 2-tridecanone production by 28 and 43%, respectively. Concentrations of 2-undecanone and 2-tridecanone were lowest in onion bulbs of plants grown in sewage sludge and unamended soil, respectively. The increased concentrations of 2-undecanone and 2-tridecanone in onion bulbs may provide a protective character against insect and spider mite attack in field grown onions.

  17. Root exudation of phytosiderophores from soil-grown wheat

    Science.gov (United States)

    Oburger, Eva; Gruber, Barbara; Schindlegger, Yvonne; Schenkeveld, Walter D C; Hann, Stephan; Kraemer, Stephan M; Wenzel, Walter W; Puschenreiter, Markus

    2014-01-01

    For the first time, phytosiderophore (PS) release of wheat (Triticum aestivum cv Tamaro) grown on a calcareous soil was repeatedly and nondestructively sampled using rhizoboxes combined with a recently developed root exudate collecting tool. As in nutrient solution culture, we observed a distinct diurnal release rhythm; however, the measured PS efflux was c. 50 times lower than PS exudation from the same cultivar grown in zero iron (Fe)-hydroponic culture. Phytosiderophore rhizosphere soil solution concentrations and PS release of the Tamaro cultivar were soil-dependent, suggesting complex interactions of soil characteristics (salinity, trace metal availability) and the physiological status of the plant and the related regulation (amount and timing) of PS release. Our results demonstrate that carbon and energy investment into Fe acquisition under natural growth conditions is significantly smaller than previously derived from zero Fe-hydroponic studies. Based on experimental data, we calculated that during the investigated period (21–47 d after germination), PS release initially exceeded Fe plant uptake 10-fold, but significantly declined after c. 5 wk after germination. Phytosiderophore exudation observed under natural growth conditions is a prerequisite for a more accurate and realistic assessment of Fe mobilization processes in the rhizosphere using both experimental and modeling approaches. PMID:24890330

  18. Characterization of Cellulolytic Bacterial Cultures Grown in Different Substrates

    Directory of Open Access Journals (Sweden)

    Mohamed Idris Alshelmani

    2013-01-01

    Full Text Available Nine aerobic cellulolytic bacterial cultures were obtained from the Leibniz Institute DSMZ-German Collection of Microorganisms and Cell Culture (DSMZ and the American Type Culture Collection (ATCC. The objectives of this study were to characterize the cellulolytic bacteria and to determine the optimum moisture ratio required for solid state fermentation (SSF of palm kernel cake (PKC. The bacteria cultures were grown on reconstituted nutrient broth, incubated at 30∘C and agitated at 200 rpm. Carboxymethyl cellulase, xylanase, and mannanase activities were determined using different substrates and after SSF of PKC. The SSF was conducted for 4 and 7 days with inoculum size of 10% (v/w on different PKC concentration-to-moisture ratios: 1 : 0.2, 1 : 0.3, 1 : 0.4, and 1 : 0.5. Results showed that Bacillus amyloliquefaciens 1067 DSMZ, Bacillus megaterium 9885 ATCC, Paenibacillus curdlanolyticus 10248 DSMZ, and Paenibacillus polymyxa 842 ATCC produced higher enzyme activities as compared to other bacterial cultures grown on different substrates. The cultures mentioned above also produced higher enzyme activities when they were incubated under SSF using PKC as a substrate in different PKC-to-moisture ratios after 4 days of incubation, indicating that these cellulolytic bacteria can be used to degrade and improve the nutrient quality of PKC.

  19. Yield of lettuce grown in aquaponic system using different substrates

    Directory of Open Access Journals (Sweden)

    Rodrigo A. Jordan

    Full Text Available ABSTRACT In the aquaponic system, the characteristics of the materials used as substrate directly affect plant development, because besides acting as a support base, they must present a surface to fix microorganisms, responsible for the conversion of nutrients into forms more easily available to plants. Thus, the objective of this study was to evaluate the effect of four growing substrates on the yield of lettuce grown in aquaponic system. The experimental design was randomized blocks with four treatments, which corresponded to the substrates, and six replicates. Plants were grown using the nutrient film technique (NFT system. The substrates used in the experiment were: coconut shell fiber with crushed stone #3, expanded vermiculite, zeolite and phenolic foam. The treatment with phenolic foam was considered as the least suitable for lettuce cultivation in aquaponic system, because it caused lower yield (20.8 t ha-1. The treatment using coconut shell fiber with crushed stone #3 was considered as the most adequate, since it led to higher yield (39.9 t ha-1 compared with the other substrates analyzed.

  20. Stress determination in thermally grown alumina scales using ruby luminescence

    Energy Technology Data Exchange (ETDEWEB)

    Renusch, D.; Veal, B.W.; Koshelev, I.; Natesan, K.; Grimsditch [Argonne National Lab., IL (United States); Hou, P.Y. [Lawrence Berkeley Lab., CA (United States)

    1996-06-01

    By exploiting the strain dependence of the ruby luminescence line, we have measured the strain in alumina scales thermally grown on Fe-Cr- Al alloys. Results are compared and found to be reasonably consistent with strains determined using x rays. Oxidation studies were carried out on alloys Fe - 5Cr - 28Al and Fe - 18Cr - 10Al (at.%). Significantly different levels of strain buildup were observed in scales on these alloys. Results on similar alloys containing a ``reactive element`` (Zr or Hf) in dilute quantity are also presented. Scales on alloys containing a reactive element (RE) can support significantly higher strains than scales on RE-free alloys. With the luminescence technique, strain relief associated with spallation thresholds is readily observed.

  1. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  2. Effects of irrigation strategies and soils on field grown potatoes

    DEFF Research Database (Denmark)

    Ahmadi, Seyed Hamid; Plauborg, Finn; Andersen, Mathias Neumann

    2011-01-01

    Root distribution of field grown potatoes (cv. Folva) was studied in 4.32m2 lysimeters and subjected to full (FI), deficit (DI), and partial root-zone drying (PRD) irrigation strategies. Drip irrigation was applied for all irrigations. Irrigations were run in three different soils: coarse sand......, loamy sand, and sandy loam. Irrigation treatments started after tuber bulking and lasted until final harvest with PRD and DI receiving 65% of FI. Potatoes irrigated with water-saving irrigation techniques (PRD and DI) did not show statistically different dry root mass and root length density (RLD, cm...... density in the furrow. Most roots accumulated in the surface layers of coarse sand as compared to the other soil types. In the deep soil profile (30–70 cm) a higher root density was found in loamy sand compared with the sandy loam and coarse sand. Approximately twice the amounts of roots were found below...

  3. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  4. InN grown by migration enhanced afterglow (MEAglow)

    International Nuclear Information System (INIS)

    Butcher, Kenneth Scott A.; Alexandrov, Dimiter; Terziyska, Penka; Georgiev, Vasil; Georgieva, Dimka; Binsted, Peter W.

    2012-01-01

    InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Optical absorption in gel grown cadmium tartrate single crystals

    International Nuclear Information System (INIS)

    Arora, S K; Kothari, A J; Patel, R G; Chauha, K M; Chudasama, B N

    2006-01-01

    Single crystals of cadmium tartrate pentahydrate (CTP) have been grown by the famous gel technique. The slow and controlled reaction between Cd 2+ and (C 4 H 4 O 6 ) 2- ions in silica hydrogel results in formation of the insoluble product, CdC 4 H 4 O 6 .5H 2 O. Optical absorption spectra have been recorded in the range 200 to 2500 nm. Fundamental absorption edge for electronic transition has been analyzed. The direct allowed transition is found to be present in the region of relatively higher photon energy. Analysis of the segments of α 1/2 versus hν graph has been made to separate individual contribution of phonons. The phonons involved in the indirect transition are found to correspond to 335 and 420 cm -1 . Scattering of charge carriers in the lattice is found due to acoustic phonons

  6. Alkaline-doped manganese perovskite thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Bibes, M.; Gorbenko, O.; Martinez, B.; Kaul, A.; Fontcuberta, J.

    2000-01-01

    We report on the preparation and characterization of La 1-x Na x MnO 3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component

  7. Heavy metal absorption by vegetables grown in different soils

    International Nuclear Information System (INIS)

    Canova, F.; Riolfatti, M.; Ravazzolo, E.; Da Ros, D.; Brigato, L.

    1995-01-01

    The authors study the bibliographic and experimental data on absorption by vegetables of several heavy metals present in the soil or brought to it via fertilizations, especially with the use of compost coming from waste treatment plants. The presence of heavy metals in the soil causes increased levels of these toxic substances in the edible parts of the vegetables grown in that soil. Not to be neglected is also the absorption by the leaf apparatus of airborne particulate containing heavy metals which deposit on the parts of the vegetable exposed to the air. The available data lack homogeneity of investigation as they have been draw from studies which followed different methodologies. Therefore further studies are required in order to: eliminate some of the variables that might affect the absorption of metals from the soil and supply comparable data. Moreover, a greater number of vegetable species and their different edible parts will have to be taken into consideration

  8. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A [Clinton, TN; Montgomery, Frederick C [Oak Ridge, TN; Baker, Frederick S [Oak Ridge, TN

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  9. Epitaxially Grown Layered MFI–Bulk MFI Hybrid Zeolitic Materials

    KAUST Repository

    Kim, Wun-gwi

    2012-11-27

    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered zeolite material grown epitaxially on the surface of a bulk zeolite material. Specifically, layered (2-D) MFI sheets were grown on the surface of bulk MFI crystals of different sizes (300 nm and 10 μm), thereby resulting in a hybrid material containing a unique morphology of interconnected micropores (∼0.55 nm) and mesopores (∼3 nm). The structure and morphology of this material, referred to as a "bulk MFI-layered MFI" (BMLM) material, was elucidated by a combination of XRD, TEM, HRTEM, SEM, TGA, and N2 physisorption techniques. It is conclusively shown that epitaxial growth of the 2-D layered MFI sheets occurs in at least two principal crystallographic directions of the bulk MFI crystal and possibly in the third direction as well. The BMLM material combines the properties of bulk MFI (micropore network and mechanical support) and 2-D layered MFI (large surface roughness, external surface area, and mesoporosity). As an example of the uses of the BMLM material, it was incorporated into a polyimide and fabricated into a composite membrane with enhanced permeability for CO2 and good CO2/CH4 selectivity for gas separations. SEM-EDX imaging and composition analysis showed that the polyimide and the BMLM interpenetrate into each other, thereby forming a well-adhered polymer/particle microstructure, in contrast with the defective interfacial microstructure obtained using bare MFI particles. Analysis of the gas permeation data with the modified Maxwell model also allows the estimation of the effective volume of the BMLM particles, as well as the CO2 and CH4 gas permeabilities of the interpenetrated layer at the BMLM/polyimide interface. © 2012 American Chemical Society.

  10. Initial spacing of poplars and willows grown as arable coppice

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, A.; Johns, C.

    1997-11-01

    Two clones of poplar and two clones of willow were grown at two sites, on a three year cutting cycle, at six different square spacings, between 0.8 metres and 1.5 metres. The two willow clones 'Bowles hybrid' and 'Dasyclados' were planted at both sites. The poplar clones Populus interamericana 'Beaupre' and Populus trichocarpa 'Columbia River'' were planted at Wishanger in Hampshire. The poplar clones Populus interamericana 'Boelare' and Populus trichocarpa 'Trichobel' were planted at Downham Market in Norfolk. The highest yield of 17.55 oven dry tonnes per hectare (odt/ha/annum) was obtained from 'Bowles hybrid', at the closest spacing, grown on a water meadow adjacent to the River Wey at Wishanger. The highest yield for all clones at both sites was achieved at the closest spacing (in this first rotation). There was a significant linear effect. One of the most interesting observations was that when comparing the gradient of the linear relationship, within species, the gradient was steeper for the higher yielding clone. This was particularly so for the willows. This would suggest that higher yielding clones are more tolerant of crowding, or, that upright Salix viminalis make better use of close space than the more spreading Salix dasyclados. The new Salix x Salix schwerinnii hybrids should therefore also be responsive to closer spacing. The same effect was observed for the poplars at Wishanger only, but the difference was not as dramatic. There was a suggestion from the highest yielding poplar plots that optimum yield may still be obtained at the currently recommended spacing of 1.0 metre x 1.0 metre. (author)

  11. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  12. Relaxor properties of barium titanate crystals grown by Remeika method

    Science.gov (United States)

    Roth, Michel; Tiagunov, Jenia; Dul'kin, Evgeniy; Mojaev, Evgeny

    2017-06-01

    Barium titanate (BaTiO3, BT) crystals have been grown by the Remeika method using both the regular KF and mixed KF-NaF (0.6-0.4) solvents. Typical acute angle "butterfly wing" BT crystals have been obtained, and they were characterized using x-ray diffraction, scanning electron microscopy (including energy dispersive spectroscopy), conventional dielectric and acoustic emission methods. A typical wing has a triangular plate shape which is up to 0.5 mm thick with a 10-15 mm2 area. The plate has a (001) habit and an atomically smooth outer surface. Both K+ and F- solvent ions are incorporated as dopants into the crystal lattice during growth substituting for Ba2+ and O2- ions respectively. The dopants' distribution is found to be inhomogeneous, their content being almost an order of magnitude higher (up to 2 mol%) at out surface of the plate relatively to the bulk. A few μm thick surface layer is formed where a multidomain ferroelectric net is confined between two≤1 μm thick dopant-rich surfaces. The layer as a whole possess relaxor ferroelectric properties, which is apparent from the appearance of additional broad maxima, Tm, in the temperature dependence of the dielectric permittivity around the ferroelectric phase transition. Intense acoustic emission responses detected at temperatures corresponding to the Tm values allow to observe the Tm shift to lower temperatures at higher frequencies, or dispersion, typical for relaxor ferroelectrics. The outer surface of the BT wing can thus serve as a relaxor thin film for various electronic application, such as capacitors, or as a substrate for BT-based multiferroic structure. Crystals grown from KF-NaF fluxes contain sodium atoms as an additional impurity, but the crystal yield is much smaller, and while the ferroelectric transition peak is diffuse it does not show any sign of dispersion typical for relaxor behavior.

  13. Increased root production in soybeans grown under space flight conditions.

    Science.gov (United States)

    Levine, H. G.; Piastuch, W. C.

    The GENEX ({Gen}e {Ex}pression) spaceflight experiment (flown on STS-87) was developed to investigate whether direct and/or indirect effects of microgravity are perceived as an external stimulus for soybean seedling response. Protocols were designed to optimize root and shoot formation, gas exchange and moisture uniformity. Six surface sterilized soybean seeds (Glycine max cv McCall) were inserted into each of 32 autoclaved plastic seed growth pouches containing an inner germination paper sleeve (for a total of 192 seeds). The pouches were stowed within a mid-deck locker until Mission Flight Day 10, at which time an astronaut added water to each pouch (thereby initiating the process of seed germination on-orbit), and subsequently transferred them to four passive, light-tight aluminum canisters called BRIC-60s (Biological Research In Canisters). We report here on the morphological characteristics of: (1) the recovered flight material, (2) the corresponding ground control population, plus (3) additional controls grown on the ground under clinostat conditions. No significant growth differences were found between the flight, ground control and clinorotated treatments for either the cotyledons or hypocotyls. There were, however, significantly longer primary roots produced in the flight population relative to the ground control population, which in turn had significantly longer primary roots than the clinorotated population. This same pattern was observed relative to the production of lateral roots (flight > control > clinorotated). Taken together with previous literature reports, we believe that there is now sufficient evidence to conclude that plants grown under conditions of microgravity will generally exhibit enhanced root production relative to their ground control counterparts. The mechanism underlying this phenomenon is open to speculation. Funded under NASA Contract NAS10-12180.

  14. Single crystal diamond detectors grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuve, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M.G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M.E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

    2007-01-01

    The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma 'Tor Vergata' University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12 C ions produced by 15MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (100) HPHT single crystal substrate. A detector 110μm thick was tested under α-particles and under 14MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α 0 ) 9 Be12 reaction peak with an energy spread of 0.5MeV for 14.8MeV neutrons and 0.3MeV for 14.1MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams

  15. Pullulan production by Aureobasidium pullulans grown on ethanol stillage as a nitrogen source.

    Science.gov (United States)

    West, T P; Strohfus, B

    1996-01-01

    Pullulan production by Aureobasidium pullulans strain RP-1 using thin stillage from fuel ethanol production as a nitrogen source was studied in a medium using corn syrup as a carbon source. The use of 1% thin stillage as a nitrogen source instead of ammonium sulphate elevated polysaccharide production by strain RP-1 cells when grown on a concentration of up to 7.5% corn syrup, independent of yeast extract supplementation. Dry weights of cells grown in medium containing ammonium sulphate as the nitrogen source were higher than the stillage-grown cells after 7 days of growth. The viscosity of the polysaccharide on day 7 was higher for cells grown on thin stillage rather than ammonium sulphate as a nitrogen source. The pullulan content of the polysaccharide elaborated by ammonium sulphate-grown cells on day 7 was higher than the pullulan content of polysaccharide produced by stillage-grown cells regardless of whether yeast extract was added to the culture medium.

  16. The Ties That Bind: Midlife Parents' Daily Experiences With Grown Children.

    Science.gov (United States)

    Fingerman, Karen L; Kim, Kyungmin; Birditt, Kira S; Zarit, Steven H

    2016-04-01

    Daily pleasant or stressful experiences with grown children may contribute to parental well-being. This diary study focused on midlife parents' ( N = 247) reports regarding grown children for 7 days. Nearly all parents (96%) had contact with a child that week via phone, text, or in person. Nearly all parents shared laughter or enjoyable interactions with grown children during the study week. More than half of parents experienced stressful encounters (e.g., child got on nerves) or stressful thoughts about grown children (e.g., worrying, fretting about a problem). Pleasant and stressful experiences with grown children were associated with parents' positive and negative daily moods. A pleasant experience with a grown child the same day as a stressful experience mitigated effects of those stressful experiences on negative mood, however. The findings have implications for understanding intergenerational ambivalence and stress buffering in this tie.

  17. The Ties That Bind: Midlife Parents’ Daily Experiences With Grown Children

    Science.gov (United States)

    Fingerman, Karen L.; Kim, Kyungmin; Birditt, Kira S.; Zarit, Steven H.

    2015-01-01

    Daily pleasant or stressful experiences with grown children may contribute to parental well-being. This diary study focused on midlife parents’ (N = 247) reports regarding grown children for 7 days. Nearly all parents (96%) had contact with a child that week via phone, text, or in person. Nearly all parents shared laughter or enjoyable interactions with grown children during the study week. More than half of parents experienced stressful encounters (e.g., child got on nerves) or stressful thoughts about grown children (e.g., worrying, fretting about a problem). Pleasant and stressful experiences with grown children were associated with parents’ positive and negative daily moods. A pleasant experience with a grown child the same day as a stressful experience mitigated effects of those stressful experiences on negative mood, however. The findings have implications for understanding intergenerational ambivalence and stress buffering in this tie. PMID:27022198

  18. Uptake of Radium by Grass and Shrubs Grown on Mineral Heaps: A Preliminary Study

    International Nuclear Information System (INIS)

    Laili, Z.; Omar, M.; Yusof, M.A. Wahab; Ibrahim, M.Z.

    2015-01-01

    A preliminary study of the uptake of 226 Ra and 228 Ra by grass and shrubs grown on mineral heaps was carried out. Activity concentrations of 226 Ra and 228 Ra in grass and shrubs were measured using gamma spectrometry. The result showed that grass and shrubs grown on mineral heaps contained elevated levels of radium compared to grass and shrubs grown on normal soils. Thus, these plants might be used for phytoremediation of radium contaminated soil. (author)

  19. Crops for biodiesel to be grown on mine tailings

    Energy Technology Data Exchange (ETDEWEB)

    Ulrichsen, H.

    2007-12-01

    Natural Resources Canada has launched a feasibility project along with several branches of the federal government, provincial government, Laurentian University and mining and forestry companies to determine if crops suitable for producing biodiesel fuel can be grown on mine tailings. The concept first came about when a biodiesel plant was proposed to be built in Sudbury. Although plans for the plant have been abandoned, the biodiesel crop project is still going ahead. Crops will be cultivated on 2 half-hectare plots on the CVRD Inco tailings in Sudbury, 1 half-hectare plot on the Xstrata Nickel tailings in Sudbury and 1 half-hectare plot on the Goldcorp tailings in Timmins. Paper sludge from St. Marys Paper Company in Sault Ste. Marie and Domtar in Espanola will be spread on the plots in January when the frozen ground is easier to work on with heavy equipment. In the spring, the plots will be seeded with corn, canola or soy, with the possibility of alder and willow in the future. Instruments to monitor groundwater on the sites will also be installed. Biodiesel produced with vegetable or meat oils has been touted as being an environmentally sound diesel fuel. Emissions from vehicles fueled by biodiesel are 40 to 100 per cent lower than those from conventional diesel engines. Proponents of the project emphasize the value of using marginal lands like mine tailings to grow crops for biodiesel fuel instead of prime agricultural land. There are 2,500 hectares of tailings in Sudbury that could be potentially used for this purpose, and about 2,000 hectares at one mine site in Timmins. A Sudbury-area farmer will provide advice about growing the crops and will also grow the same crops on a portion of his land for a comparative evaluation of crop yield. The paper sludge offers the benefit of allowing crops to be grown, but it also cuts off oxygen flow to the tailings underneath, thereby preventing sulphides in the tailings from rusting. The paper sludge may even help the

  20. As-Grown Gallium Nitride Nanowire Electromechanical Resonators

    Science.gov (United States)

    Montague, Joshua R.

    Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

  1. Effect Of Bird Manure On Cotton Plants Grown On Soils Sampled ...

    African Journals Online (AJOL)

    Cotton plant had a better development and growth when bird manure was only applied to soil or combined with mineral fertilizer and when cotton was grown on a soil where the previous crops were cereals (maize or sorghum). Planting cotton on a soil where the previous crop grown was maize or sorghum had no significant ...

  2. 76 FR 34181 - Pistachios Grown in California, Arizona, and New Mexico; Proposed Amendments to Marketing Order

    Science.gov (United States)

    2011-06-13

    ...; FV11-983-1 PR] Pistachios Grown in California, Arizona, and New Mexico; Proposed Amendments to... amendments to Marketing Agreement and Order No. 983, which regulates the handling of pistachios grown in California, Arizona, and New Mexico, were proposed by the Administrative Committee for Pistachios (Committee...

  3. 75 FR 64681 - Pistachios Grown in California, Arizona, and New Mexico; Continuance Referendum

    Science.gov (United States)

    2010-10-20

    ... Service 7 CFR Part 983 [Doc. No. AMS-FV-10-0077; FV10-983-3 CR] Pistachios Grown in California, Arizona..., Arizona, and New Mexico pistachio producers to determine whether they favor continuance of the marketing order regulating the handling of pistachios grown in California, Arizona, and New Mexico. DATES: The...

  4. 78 FR 21520 - Sweet Cherries Grown in Designated Counties in Washington; Decreased Assessment Rate

    Science.gov (United States)

    2013-04-11

    ...; FV12-923-1 FIR] Sweet Cherries Grown in Designated Counties in Washington; Decreased Assessment Rate... 2012-2013 and subsequent fiscal periods from $0.40 to $0.18 per ton of sweet cherries handled. The Committee locally administers the marketing order for sweet cherries grown in designated counties in...

  5. 78 FR 76031 - Sweet Cherries Grown in Designated Counties in Washington; Decreased Assessment Rate

    Science.gov (United States)

    2013-12-16

    ... FIR] Sweet Cherries Grown in Designated Counties in Washington; Decreased Assessment Rate AGENCY... subsequent fiscal periods from $0.18 to $0.15 per ton of sweet cherries handled. The Committee locally administers the marketing order for sweet cherries grown in designated counties in Washington. The Committee's...

  6. 76 FR 4254 - Irish Potatoes Grown in Certain Designated Counties in Idaho, and Malheur County, Oregon...

    Science.gov (United States)

    2011-01-25

    ... Service 7 CFR Part 945 [Doc. No. AMS-FV-10-0109; FV11-945-1] Irish Potatoes Grown in Certain Designated... among eligible producers of Irish potatoes in certain designated counties in Idaho, and Malheur County... Irish potatoes grown in the production area. DATES: The referendum will be conducted from March 5 to...

  7. 76 FR 33967 - Irish Potatoes Grown in Southeastern States; Suspension of Marketing Order Provisions

    Science.gov (United States)

    2011-06-10

    ... IR] Irish Potatoes Grown in Southeastern States; Suspension of Marketing Order Provisions AGENCY... suspends the marketing order for Irish potatoes grown in Southeastern states (order), and the rules and regulations implemented thereunder, through March 1, 2014. The order regulates the handling of Irish potatoes...

  8. Quantification of the growth response of light quantity of greenhouse grown crops

    NARCIS (Netherlands)

    Marcelis, L.F.M.; Broekhuijsen, A.G.M.; Nijs, E.M.F.M.; Raaphorst, M.G.M.

    2006-01-01

    Growers have often assumed that a 1% increment in light results in a 1% yield increase. In this study, this rule of thumb has been evaluated for a number of greenhouse grown crops: fruit vegetables (cucumber, tomato, sweet pepper), soil grown vegetables (lettuce, radish), cut flowers (rose,

  9. Characterization of GaN/AlGaN epitaxial layers grown

    Indian Academy of Sciences (India)

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers ...

  10. 29 CFR 780.506 - Dependence of exemption on shade-grown tobacco operations.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false Dependence of exemption on shade-grown tobacco operations. 780.506 Section 780.506 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION....506 Dependence of exemption on shade-grown tobacco operations. The exemption provided by section 13(a...

  11. 78 FR 30737 - Irish Potatoes Grown in Colorado; Reestablishment of Membership on the Colorado Potato...

    Science.gov (United States)

    2013-05-23

    ... FR] Irish Potatoes Grown in Colorado; Reestablishment of Membership on the Colorado Potato...: This final rule reestablishes the membership on the Colorado Potato Administrative Committee, Area No... Irish potatoes grown in Colorado. This action modifies the Committee membership structure by amending...

  12. Mid-Atlantic Consumer Purchasing Behavior and Knowledge of Locally Grown and Seasonal Produce

    Science.gov (United States)

    Chamberlain, Amy J.; Kelley, Kathleen M.; Hyde, Jeffrey

    2013-01-01

    Mid-Atlantic urban consumers were surveyed on their fruit and vegetable purchasing behaviors and their knowledge of produce grown in the region. Consumers were generally unaware of what produce is grown in the mid-Atlantic and during what months they are harvested. Additionally, differences pertaining to number of produce items purchased were…

  13. Helicopter Parents and Landing Pad Kids: Intense Parental Support of Grown Children

    Science.gov (United States)

    Fingerman, Karen L.; Cheng, Yen-Pi; Wesselmann, Eric D.; Zarit, Steven; Furstenberg, Frank; Birditt, Kira S.

    2012-01-01

    Popular media describe adverse effects of helicopter parents who provide intense support to grown children, but few studies have examined implications of such intense support. Grown children (N = 592, M age = 23.82 years, 53% female, 35% members of racial/ethnic minority groups) and their parents (N = 399, M age = 50.67 years, 52% female; 34%…

  14. 29 CFR 780.505 - Definition of “shade-grown tobacco.”

    Science.gov (United States)

    2010-07-01

    ... Employment or Agricultural Employees in Processing Shade-Grown Tobacco; Exemption From Minimum Wage and... 29 Labor 3 2010-07-01 2010-07-01 false Definition of âshade-grown tobacco.â 780.505 Section 780.505 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR...

  15. Heavy metal contamination in vegetables grown in Rawalpindi, Pakistan

    International Nuclear Information System (INIS)

    Ahmed, W.; Ahmed, A.; Ahmad, A.; Randhawa, M.A.; Ahmad, R.; Khalid, N.

    2012-01-01

    Copper (Cu), cadmium (Cd), chromium (Cr) nickel (Ni), lead (Pb), Iron (Fe), Manganese (Mn) and zinc (Zn) contents of various vegetables (bitter melon, tomato, eggplant, lettuce, cucumber and bell pepper) produced in Rawalpindi, Pakistan was determined using Atomic absorption spectrophotometer (AAS). These plants are the basis of human nutrition in the study area. All vegetables grown at sewage water by farmers showed the highest contamination of heavy metals, followed by local market, Progressive farmers and hydroponic plant. The concentration ranges in mg/kg were (1.45 -2.55) for Cd, (3.10 to 4.92) Cr, (12.15- 20.50) Cu, (25.00-51.00) for Fe, (7.80 to 15.60) for Mn, (10.16 to 15.42) for Ni, (2.12 to 5.41) Pb and (16.58 to 24.08) for zinc. The contamination was above the Maximum Residue Limits (MRLs), set out by WHO. Irregular trends in concentration were also observed in vegetables obtained from local market, progressive farmers and hydroponic plant. (author)

  16. ARSENIC AND COPPER UPTAKE BY CABBAGES GROWN ON POLLUTED SOILS

    Directory of Open Access Journals (Sweden)

    Nguyen Thi Kim Phuong

    2017-11-01

    Full Text Available Cabbages (Brassica Juncea (L. Czern were grown in pot experiments on typical unpolluted and polluted soils with concentration changing from 20.50 - 50.00 mg As/kg and 156.00 - 413.00 mg Cu/kg dry soil. The results demonstrate the elevation of As and Cu in soil may lead to increased uptake by these cabbages subsequent entry into human food chain. It was found 11.84- 32.12 mg As/kg and 46.86 - 94.47 mg Cu/kg dry leaves. It has tendency increase uptake and accumulation of Cu in cabbage tissue with increasing cultivated time, whereas, it was found accumulation of As in cabbages tissue decreased with time prolonging. The quantity of As and Cu in these cabbages, were significant higher than 0.2 mg As/kg and 5.0 mg Cu/kg fresh vegetable, the permissible limit concentration in fresh vegetable. This indicated that human may As and Cu exposure occur through eating these vegetables.

  17. Nutritional Characteristics of Forage Grown in South of Benin

    Directory of Open Access Journals (Sweden)

    Nadia Musco

    2016-01-01

    Full Text Available In order to provide recommendations on the most useful forage species to smallholder farmers, eleven grass and eleven legume forages grown in Abomey-Calavi in Republic of Benin were investigated for nutritive value (i.e. chemical composition and energy content and fermentation characteristics (i.e. gas and volatile fatty acid production, organic matter degradability. The in vitro gas production technique was used, incubating the forages for 120 h under anaerobic condition with buffalo rumen fluid. Compared to legume, tropical grass forages showed lower energy (8.07 vs 10.57 MJ/kg dry matter [DM] and crude protein level (16.10% vs 19.91% DM and higher cell wall content (neutral detergent fiber: 63.8% vs 40.45% DM, respectively. In grass forages, the chemical composition showed a quite high crude protein content; the in vitro degradability was slightly lower than the range of tropical pasture. The woody legumes were richer in protein and energy and lower in structural carbohydrates than herbaceous plants, however, their in vitro results are influenced by the presence of complex compounds (i.e. tannins. Significant correlations were found between chemical composition and in vitro fermentation characteristics. The in vitro gas production method appears to be a suitable technique for the evaluation of the nutritive value of forages in developing countries.

  18. Sample sufficiency of chinese pink grown in different substrates

    Directory of Open Access Journals (Sweden)

    Sidinei José lopes

    2016-04-01

    Full Text Available The cravina is an excellent plant to build up gardens due to its early flowering, abundant flowering and great performance in spring and autumn. The objective was to estimate the sample size for plant chinese pink, grown on different substrates, and check the variability of the sample size between growth parameters and production and substrates. They used seven treatments (substrates: S1 = 50% soil + 50% rice husk ash; S2 = 80% soil + 20% earthworm castings; S3 = 80% rice husk ash + 20% earthworm castings; S4 = 40% soil + 40% rice husk ash + 20% earthworm castings; S5 = 100% peat; S6 = 100% commercial substrate Mecplant®; S7 = 50% peat + 50% rice husk ash, with 56 repetitions each, totaling 392 plants of garden pink, which was evaluated in 17 of growth and production parameters. The methodology used to bootstrap resampling, with replacement, for each character within each substrate with predetermined error: 5, 10, 20 and 40% of the average (D%. To a 95% confidence interval, with D = 20%, the substrate 50% soil and 50% of rice husk ash had the largest sample size 11 characters; when comparing the characters , the number of flower buds had the highest sample size on average 113 plants. Using samples of 44 plant chinese pink for commercial substrate Mecplant® meet the lower precisions or equal to 20% for all variables. There is variation in sample size in relation to the substrate used and the variable evaluated in chinese pink plants.

  19. Disorder in silicon films grown epitaxially at low temperature

    International Nuclear Information System (INIS)

    Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

    2003-01-01

    Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

  20. The structure of Ta nanopillars grown by glancing angle deposition

    International Nuclear Information System (INIS)

    Zhou, C.M.; Gall, D.

    2006-01-01

    Regular arrays of Ta nanopillars, 200 nm wide and 500 nm tall, were grown on SiO 2 nanosphere patterns by glancing angle sputter deposition (GLAD). Plan-view and cross-sectional scanning electron microscopy analyses show dramatic changes in the structure and morphology of individual nanopillars as a function of growth temperature T s ranging from 200 to 700 deg. C. At low temperatures, T s ≤ 300 deg. C, single nanopillars develop on each sphere and branch into subpillars near the pillar top. In contrast, T s ≥ 500 deg. C leads to branching during the nucleation stage at the pillar bottom. The top branching at low T s is associated with surface mounds on a growing pillar that, due to atomic shadowing, develop into separated subpillars. At high T s , the branching occurs during the nucleation stage where multiple nuclei on a single SiO 2 sphere develop into subpillars during a competitive growth mode which, in turn, leads to intercolumnar competition and the extinction of some nanopillars

  1. Modeling uptake kinetics of cadmium by field-grown lettuce

    Energy Technology Data Exchange (ETDEWEB)

    Chen Weiping [Department of Environmental Sciences, University of California, 900 University Avenue, Riverside, CA 92521 (United States)], E-mail: chenweip@yahoo.com.cn; Li Lianqing [Institute of Resources, Ecosystem and Environment of Agriculture, Nanjing Agricultural University, Nanjing 210095 (China); Chang, Andrew C.; Wu Laosheng [Department of Environmental Sciences, University of California, 900 University Avenue, Riverside, CA 92521 (United States); Kwon, Soon-Ik [Agricultural Environmental and Ecology Division, National Institute of Agricultural Science and Technology, Suwon 441-707 (Korea, Republic of); Bottoms, Rick [Desert Research and Extension Center, 1004 East Holton Road, El Centro, CA 92243 (United States)

    2008-03-15

    Cadmium uptake by field grown Romaine lettuce treated with P-fertilizers of different Cd levels was investigated over an entire growing season. Results indicated that the rate of Cd uptake at a given time of the season can be satisfactorily described by the Michaelis-Menten kinetics, that is, plant uptake increases as the Cd concentration in soil solution increases, and it gradually approaches a saturation level. However, the rate constant of the Michaelis-Menten kinetics changes over the growing season. Under a given soil Cd level, the cadmium content in plant tissue decreases exponentially with time. To account for the dynamic nature of Cd uptake, a kinetic model integrating the time factor was developed to simulate Cd plant uptake over the growing season: C{sub Plant} = C{sub Solution} . PUF{sub max} . exp[-b . t], where C{sub Plant} and C{sub Solution} refer to the Cd content in plant tissue and soil solution, respectively, PUF{sub max} and b are kinetic constants. - A kinetic model was developed to evaluate the uptake of Cd under field conditions.

  2. Modeling uptake kinetics of cadmium by field-grown lettuce

    International Nuclear Information System (INIS)

    Chen Weiping; Li Lianqing; Chang, Andrew C.; Wu Laosheng; Kwon, Soon-Ik; Bottoms, Rick

    2008-01-01

    Cadmium uptake by field grown Romaine lettuce treated with P-fertilizers of different Cd levels was investigated over an entire growing season. Results indicated that the rate of Cd uptake at a given time of the season can be satisfactorily described by the Michaelis-Menten kinetics, that is, plant uptake increases as the Cd concentration in soil solution increases, and it gradually approaches a saturation level. However, the rate constant of the Michaelis-Menten kinetics changes over the growing season. Under a given soil Cd level, the cadmium content in plant tissue decreases exponentially with time. To account for the dynamic nature of Cd uptake, a kinetic model integrating the time factor was developed to simulate Cd plant uptake over the growing season: C Plant = C Solution . PUF max . exp[-b . t], where C Plant and C Solution refer to the Cd content in plant tissue and soil solution, respectively, PUF max and b are kinetic constants. - A kinetic model was developed to evaluate the uptake of Cd under field conditions

  3. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  4. Characteristics of purple nonsulfur bacteria grown under Stevia residue extractions.

    Science.gov (United States)

    Xu, J; Feng, Y; Wang, Y; Lin, X

    2013-11-01

    As a consequence of the large-scale cultivation of Stevia plants, releases of plant residues, the byproduct after sweetener extraction, to the environment are inevitable. Stevia residue and its effluent after batching up contain large amounts of organic matters with small molecular weight, which therefore are a potential pollution source. Meanwhile, they are favourite substrates for micro-organism growths. This investigation was aimed to utilize the simulated effluent of Stevia residue to enrich the representative purple nonsulfur bacterium (PNSB), Rhodopseudomonas palustris (Rps. palustris), which has important economic values. The growth profile and quality of Rps. palustris were characterized by spectrophotometry, compared to those grown in common PNSB mineral synthetic medium. Our results revealed that the simulated effluent of Stevia residue not only stimulated Rps. palustris growth to a greater extent, but also increased its physiologically active cytochrome concentrations and excreted indole-3-acetic acid (IAA) content. This variation in phenotype of Rps. palustris could result from the shift in its genotype, further revealed by the repetitive sequence-based PCR (rep-PCR) fingerprinting analysis. Our results showed that the effluent of Stevia residue was a promising substrate for microbial growth. © 2013 The Society for Applied Microbiology.

  5. Methyl halide emissions from greenhouse-grown mangroves

    Science.gov (United States)

    Manley, Steven L.; Wang, Nun-Yii; Walser, Maggie L.; Cicerone, Ralph J.

    2007-01-01

    Two mangrove species, Avicennia germinans and Rhizophora mangle, were greenhouse grown for nearly 1.5 years from saplings. A single individual of each species was monitored for the emission of methyl halides from aerial tissue. During the first 240 days, salinity was incrementally increased with the addition of seawater, and was maintained between 18 and 28‰ for the duration of the study. Exponential growth occurred after 180 days. Methyl halide emissions normalized to leaf area were measured throughout the study and varied dramatically. Emission rates normalized to land area (mg m-2 y-1), assuming a LAI = 5, yielded 82 and 29 for CH3Cl, 10 and 1.6 for CH3Br, and 26 and 11 for CH3I, for A. germinans and R. mangle, respectively. From these preliminary determinations, only CH3I emissions emerge as being of possible global atmospheric significance. This study emphasizes the need for field studies of methyl halide emissions from mangrove forests.

  6. Resilience among abused and neglected children grown up.

    Science.gov (United States)

    McGloin, J M; Widom, C S

    2001-01-01

    Although an extensive literature has accumulated documenting the maladaptive outcomes associated with childhood victimization, a limited body of knowledge addresses resilience. This paper sought to operationalize the construct of resilience across a number of domains of functioning and time periods and to determine the extent to which abused and neglected children grown up demonstrate resilience. Substantiated cases of child abuse and neglect from 1967 to 1971 were matched on gender, age, race, and approximate family social class with nonabused and nonneglected children and followed prospectively into young adulthood. Between 1989 and 1995. 1,196 participants (676 abused and neglected and 520 controls) were administered a 2-hr in-person interview, including a psychiatric assessment. Resilience requires meeting the criteria for success across six of eight domains of functioning: employment, homelessness, education, social activity, psychiatric disorder, substance abuse, and two domains assessing criminal behavior (official arrest and self-reports of violence). Results indicate that 22% of abused and neglected individuals meet the criteria for resilience. More females met the criteria for resilience and females were successful across a greater number of domains than males. We speculate on the meaning of these findings and discuss implications for the child maltreatment field. Limitations of the study are also acknowledged.

  7. Characterization of traditional tomato varieties grown in organic conditions

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Cebrino, F.; Lozano, M.; Ayuso, M. C.; Bernalte, M. J.; Vidal-Aragon, M. C.; Gonzalez-Gomez, D.

    2011-07-01

    Organic horticulture is a sustainable agricultural model that can provide high quality products and allows conservation of genetic diversity. Traditional tomato varieties are well adapted to organic production and they have the organoleptic characteristics demanded by consumers. Seven traditional tomato varieties were studied: BGV-001020, BGV-000998, BGV-001000, BGV-004123, CIDA-44-A, CIDA-62, CIDA-59-A, and they were compared with a tomato Marmandetype commercial cv. Baghera, all them grown under organic production. Several quality variables were measured to establish whether any of the traditional varieties might be suitable for commercial production. CIDA-62 was shown to be the most promising variety. It produces tomatoes of very high quality under organic conditions. It excels in terms of bioactive compounds such as vitamin C (459.22 mg kg{sup -}1 fw) and lycopene (62.25 mg kg{sup -}1 fw) and in its total antioxidant activity (43.58 mg Trolox/100 g fw). It is also outstanding in terms of its sugar content (4.56% fructose and glucose combined) and of its total soluble solids content (6.22 degree centigrade Brix). All of these variables are associated with both sensory quality and health benefits. Other varieties that emerged with relatively high levels of total soluble solids content, lycopene, vitamin C and total antioxidant activity were BGV-004123 and BGV-001020. (Author) 41 refs.

  8. A novel conformation of gel grown biologically active cadmium nicotinate

    Science.gov (United States)

    Nair, Lekshmi P.; Bijini, B. R.; Divya, R.; Nair, Prabitha B.; Eapen, S. M.; Dileep Kumar, B. S.; Nishanth Kumar, S.; Nair, C. M. K.; Deepa, M.; Rajendra Babu, K.

    2017-11-01

    The elimination of toxic heavy metals by the formation of stable co-ordination compounds with biologically active ligands is applicable in drug designing. A new crystalline complex of cadmium with nicotinic acid is grown at ambient temperature using the single gel diffusion method in which the crystal structure is different from those already reported. Single crystal x-ray diffraction reveals the identity of crystal structure belonging to monoclinic system, P21/c space group with cell dimensions a = 17.220 (2) Å, b = 10.2480 (2) Å, c = 7.229(9) Å, β = 91.829(4)°. Powder x-ray diffraction analysis confirmed the crystallinity of the sample. The unidentate mode of co-ordination between the metal atom and the carboxylate group is supported by the Fourier Transform Infra Red spectral data. Thermal analysis ensures the thermal stability of the complex. Kinetic and thermodynamic parameters are also calculated. The stoichiometry of the complex is confirmed by the elemental analysis. The UV-visible spectral analysis shows the wide transparency window of the complex in the visible region. The band gap of the complex is found to be 3.92 eV. The complex shows excellent antibacterial and antifungal activity.

  9. Secretomic survey of Trichoderma harzianum grown on plant biomass substrates.

    Science.gov (United States)

    Gómez-Mendoza, Diana Paola; Junqueira, Magno; do Vale, Luis Henrique Ferreira; Domont, Gilberto Barbosa; Ferreira Filho, Edivaldo Ximenes; Sousa, Marcelo Valle de; Ricart, Carlos André Ornelas

    2014-04-04

    The present work aims at characterizing T. harzianum secretome when the fungus is grown in synthetic medium supplemented with one of the four substrates: glucose, cellulose, xylan, and sugarcane bagasse (SB). The characterization was done by enzymatic assays and proteomic analysis using 2-DE/MALDI-TOF and gel-free shotgun LC-MS/MS. The results showed that SB induced the highest cellulolytic and xylanolytic activities when compared with the other substrates, while remarkable differences in terms of number and distribution of protein spots in 2-DE gels were also observed among the samples. Additionally, treatment of the secretomes with PNGase F revealed that most spot trails in 2-DE gels corresponded to N-glycosylated proteoforms. The LC-MS/MS analysis of the samples identified 626 different protein groups, including carbohydrate-active enzymes and accessory, noncatalytic, and cell-wall-associated proteins. Although the SB-induced secretome displayed the highest cellulolytic and xylanolytic activities, it did not correspond to a higher proteome complexity because CM-cellulose-induced secretome was significantly more diverse. Among the identified proteins, 73% were exclusive to one condition, while only 5% were present in all samples. Therefore, this study disclosed the variation of T. harzianum secretome in response to different substrates and revealed the diversity of the fungus enzymatic toolbox.

  10. Prospects of III-nitride optoelectronics grown on Si

    International Nuclear Information System (INIS)

    Zhu, D; Wallis, D J; Humphreys, C J

    2013-01-01

    The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al 2 O 3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures. (review article)

  11. Suppression of Mg propagation into subsequent layers grown by MOCVD

    Science.gov (United States)

    Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

    2017-01-01

    Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

  12. Productive performance of soybean cultivars grown in different plant densities

    Directory of Open Access Journals (Sweden)

    Augusto Belchior Marchetti Ribeiro

    Full Text Available ABSTRACT: Plants density in soybean cultivation is an important management practice to achieve high grain yield. In this way, the objective was to evaluate the agronomic traits and grain yield in soybean in different plant densities, in two locations in the south of Minas Gerais. The experimental design was in randomized blocks, arranged in a split plot design, with three replications. Plots were composed of four population densities (300, 400, 500 and 600 thousand plants per hectare and the subplots were composed of six cultivars (‘BMX Força RR’, ‘CD 250 RR’, ‘FMT 08 - 60.346/1’, ‘NA 5909 RR’, ‘TMG 7161 RR’ and ‘V - TOP RR’ grown in Lavras and Inconfidentes, both in Minas Gerais. At the time of harvest was determined the plant height, lodging, insertion of the first pod, harvest index, number of pods per plant, number of grains, number of grains per pod and yield. Regardless of the soybean cultivar, the plant density of up to 600,000 per ha does not affect grain yield, plant height, lodging, harvest index, and number of grains per pod. The cultivars ‘V-TOP RR’ and ‘BMX FORÇA RR’ showed high grain yield and good agronomic traits in Lavras and Incofidentes.

  13. Possible Internalization of an Enterovirus in Hydroponically Grown Lettuce.

    Science.gov (United States)

    Carducci, Annalaura; Caponi, Elisa; Ciurli, Adriana; Verani, Marco

    2015-07-17

    Several studies have shown that enteric viruses can be transferred onto the surface of vegetables and fruits through spray irrigation, but, recently, reports have suggested viral contamination of vegetables sub-irrigated with reused wastewater. Hydroponic cultures, used to grow ready to eat fresh lettuce, have also been used to study the possibility of viral absorption through roots. This study was conducted to assess a possible risk of viral contamination in lettuce from contaminated water. The leaves of lettuce plants grown in hydroponic cultures where the roots were exposed to water containing Coxsakievirus B2, were analysed for evidence of the virus. The plants and water were sampled at different times and virus was measured using quantitative RT-PCR and infectivity assay. In leaf samples, the lowest observed infective data were lower than the qRT-PCR detection limits, suggesting that free viral RNA or damaged viruses are eliminated rapidly while infectious particles remain stable for a longer time. The obtained data revealed that the leaves were contaminated at a water concentration of 4.11 ± 1 Log Most Probable Number/L (8.03 ± 1 Log GC/L) a concentration observed in contaminated untreated water of wastewater treatment plants. However, the absorption dynamics and whether the virus is inactive in the leaves still remains to be clarified. Nevertheless, this work has practical implications for risk management in using reclaimed water for agricultural use; when irrigated vegetables are destined for raw consumption, virological contamination in water sources should be evaluated.

  14. Arsenic uptake and speciation in vegetables grown under greenhouse conditions.

    Science.gov (United States)

    Smith, E; Juhasz, A L; Weber, J

    2009-04-01

    The accumulation of arsenic (As) by vegetables is a potential human exposure pathway. The speciation of As in vegetables is an important consideration due to the varying toxicity of different As species. In this study, common Australian garden vegetables were hydroponically grown with As-contaminated irrigation water to determine the uptake and species of As present in vegetable tissue. The highest concentrations of total As were observed in the roots of all vegetables and declined in the aerial portions of the plants. Total As accumulation in the edible portions of the vegetables decreased in the order radish > mung bean > lettuce = chard. Arsenic was present in the roots of radish, chard, and lettuce as arsenate (As(V)) and comprised between 77 and 92% of the total As present, whereas in mung beans, arsenite (As(III)) comprised 90% of the total As present. In aerial portions of the vegetables, As was distributed equally between both As(V) and As(III) in radish and chard but was present mainly as As(V) in lettuce. The presence of elevated As in vegetable roots suggests that As species may be complexed by phytochelatins, which limits As translocation to aerial portions of the plant.

  15. Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics

    International Nuclear Information System (INIS)

    Wessely, Pia Juliane; Schwalke, Udo

    2014-01-01

    We invented a method to fabricate graphene field effect transistors (GFETs) on oxidized silicon wafers in a Silicon CMOS compatible process. The graphene layers needed are grown in situ by means of a transfer-free catalytic chemical vapor deposition (CCVD) process directly on silicon dioxide. Depending on the process parameters the fabrication of single, double or multi-layer graphene FETs (GFETs) is possible. The produced graphene layers have been characterized by SEM, TEM, TEM-lattice analysis as well as Raman-Spectroscopy. Directly after growth, the fabricated GFETs are electrically functional and can be electrically characterized via the catalyst metals which are used as contact electrodes. In contrast to monolayer graphene FETs, the fabricated bilayer graphene FETs (BiLGFETs) exhibit unipolar p-type MOSFET behavior. Furthermore, the on/off current-ratio of 10 4 up to several 10 7 at room temperature of the fabricated BiLGFETs allows their use in digital logic applications [1]. In addition, a stable hysteresis of the GFETs enables their use as memory devices without the need of storage capacitors and therefore very high memory device-densities are possible. The whole fabrication process is fully Si-CMOS compatible, enabling the use of hybrid silicon/graphene electronics.

  16. Diurnal photosynthesis and stomatal resistance in field-grown soybeans

    International Nuclear Information System (INIS)

    Miller, J.E.; Muller, R.N.; Seegers, P.

    1976-01-01

    The process of photosynthesis in green plants is the major determinant of crop yield. Although the effects of air pollutants, such as sulfur dioxide, on photosynthesis has been studied, many unsolved questions remain. This is especially true with regard to reduction of photosynthetic rate under conditions of chronic exposure causing little or no visible injury. It was the purpose of these studies to develop techniques suitable for measuring photosynthetic rates of field-grown plants without dramatically altering the microenvironment of the plants. Gross photosynthetic rates of soybeans (Glycine max. cv. Wayne) in the field were measured by exposing a small section of representative leaves for 30 seconds to 14 CO 2 in a normal atmospheric mixture by a technique similar to that of Incoll and Wright. A 1-cm 2 section of the area exposed to 14 CO 2 is punched from the leaf and processed for liquid scintillation counting. Since the treatment period is of such short duration, there is little photorespiratory loss of 14 CO 2 , and thus, the amount of 14 C fixed in the leaf can be related to the gross photosynthetic rate. Other parameters measured during the course of these experiments were stomatal resistance, light intensity, leaf water potential, and air temperature

  17. Weed flora in organically grown spring cereals in Finland

    Directory of Open Access Journals (Sweden)

    J. SALONEN

    2008-12-01

    Full Text Available The weed flora in organically grown spring cereals was investigated in southern and central Finland in 1997-1999 with the primary purpose of determining the species composition and the level of weed infestation. Altogether 165 fields were surveyed in the middle of the growing season. A total of 126 weed species were found, of which 42 exceeded the frequency level of 10%. The most frequent weed species were Chenopodium album, Stellaria media, Galeopsis spp. and Viola arvensis. Elymus repens was the most frequent grass species. The average density of weeds was 469 plants m-2 (median 395, and the air-dry biomass was 678 kg ha-1 (median 567 which accounted for 17% of the total biomass of the crop stand. Infestation by Chenopodium album and the perennial species Elymus repens, Cirsium arvense and Sonchus arvensis is of major concern. Weed control strategies should include direct control measures to overcome weed problems related to the conversion period from conventional to organic growing.

  18. Characterization of potassium bromide crystals grown in the aqueous solution of picric acid

    Energy Technology Data Exchange (ETDEWEB)

    Maheswari, J. Uma, E-mail: umak.anand@gmail.com [Department of Physics, The M.D.T.Hindu College, Tirunelveli 627010, Tamilnadu (India); Krishnan, C. [Department of Physics, Arignar Anna College, Aralvoymoli 629301, Tamilnadu (India); Kalyanaraman, S. [Physics Research Centre, Sri Paramakalyani College, Alwarkurichi 627412, Tamilnadu (India); Selvarajan, P. [Department of Physics, Aditanar College of Arts and Science, Tiruchendur 628216, Tamilnadu (India)

    2016-12-01

    Potassium bromide crystals were grown in the aqueous solution of picric acid by slow evaporation technique at room temperature. X-ray Diffraction (XRD) analysis ensures that the grown sample is in Fm3m space group and FCC structure. Energy Dispersive X-ray Spectroscopy (EDX) reveals the presence of elements in the title compound. UV–Vis-NIR spectrum reveals that the grown sample is a promising nonlinear optical (NLO) material. FTIR analysis confirms the functional groups present in the sample. The thermogravimetric (TG) and differential thermogravimetric (DTA) analyses ensure that the sample material is thermally stable up to 160 °C. The second harmonic efficiency of the sample is 1.3 times greater than that of standard KDP. The mechanical strength of the grown sample is estimated by Vickers microhardness tester. The electrical properties were investigated by impedance analysis and the results of various studies of the grown crystals are discussed.

  19. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

    Directory of Open Access Journals (Sweden)

    Wu Jiang

    2010-01-01

    Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  20. Element distribution of the barley plant grown in an agar slice suspended culture

    International Nuclear Information System (INIS)

    Makino-Nakanishi, Tomoko; Matsumoto, Satoshi

    1991-01-01

    An agar slice suspended culture was devised for the further study of the barley root. The roots were placed into an agar covered with a nylon cloth and suspended in a water culture vessel. Barley roots grown in the agar developed hardly any root hair. The element contents of the root grown in the agar culture and that in the water culture were measured by neutron activation analysis. The concentrations of K, Mg and Cl in the root grown in the agar were about half of these grown in the water. Na and Mn concentrations were the same and Ca concentration was slightly higher when grown in the agar. The agar system is expected to provide more information to study the root hair. (author)

  1. Point defects in ZnO crystals grown by various techniques

    International Nuclear Information System (INIS)

    Čížek, J; Vlček, M; Hruška, P; Lukáč, F; Melikhova, O; Anwand, W; Selim, F; Hugenschmidt, Ch; Egger, W

    2017-01-01

    In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of ≈181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of ≈165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport. (paper)

  2. Possible Internalization of an Enterovirus in Hydroponically Grown Lettuce

    Directory of Open Access Journals (Sweden)

    Annalaura Carducci

    2015-07-01

    Full Text Available Several studies have shown that enteric viruses can be transferred onto the surface of vegetables and fruits through spray irrigation, but, recently, reports have suggested viral contamination of vegetables sub-irrigated with reused wastewater. Hydroponic cultures, used to grow ready to eat fresh lettuce, have also been used to study the possibility of viral absorption through roots. This study was conducted to assess a possible risk of viral contamination in lettuce from contaminated water. The leaves of lettuce plants grown in hydroponic cultures where the roots were exposed to water containing Coxsakievirus B2, were analysed for evidence of the virus. The plants and water were sampled at different times and virus was measured using quantitative RT-PCR and infectivity assay. In leaf samples, the lowest observed infective data were lower than the qRT-PCR detection limits, suggesting that free viral RNA or damaged viruses are eliminated rapidly while infectious particles remain stable for a longer time. The obtained data revealed that the leaves were contaminated at a water concentration of 4.11 ± 1 Log Most Probable Number/L (8.03 ± 1 Log GC/L a concentration observed in contaminated untreated water of wastewater treatment plants. However, the absorption dynamics and whether the virus is inactive in the leaves still remains to be clarified. Nevertheless, this work has practical implications for risk management in using reclaimed water for agricultural use; when irrigated vegetables are destined for raw consumption, virological contamination in water sources should be evaluated.

  3. Quality of Heliconia psittacorum seedlings grown on different substrates

    Directory of Open Access Journals (Sweden)

    Raimundo Luiz Laurinho dos Santos

    2016-01-01

    Full Text Available The production of good seedlings depends on the quality of the matrix and propagation techniques used. In choosing a substrate should be particularly observed physical and chemical characteristics. The objective of this study was to assess the development and vigor of heliconia seedlings from Heliconia psittacorum species, grown on different substrates and mixtures. The materials that form the treatments were: burnt rice husk (RHB, vermiculite (VC, sugarcane waste burnt (SWB, subsoil (S, chicken bedding (CB, cattle manure (CM, earthworm humus (EH, coconut husk powder (CSP and Horticultural Plantmax (HP. The treatments chosen were: 1( ⅔ CM + ⅓ CSP, 2( ⅔CM + ⅓RHB, 3( ⅔CB + ⅓ SWB, 4(CSP, 5(½VC+ ½SWB, 6(⅔ S + ⅓ CB, 7(⅓CM + ⅔SWB, 8(⅔ CM + ⅓SWB, 9(⅔CB + ⅓RHB, 10(⅓CM + ⅔RHB, 11(⅓CB + ⅔SWB, 12(⅔CB + ⅓CSP, 13(⅔EH + ⅓CSP, 14(⅔EH + ⅓SWB, 15(⅓CB + ⅔RHB, 16(⅓EH + ⅔SWB, 17(⅔EH + ⅓RHB, 18( ½VC + ½RHB, 19(S, 20(⅔ S + ⅓ CM, 21(⅔ S + ⅓ EH, 22(EH, 23(HP, 24(⅓EH + ⅔RHB. Samples of all treatment compositions were taken and carried out chemical and physical analysis. A set of ten treatments (1, 2, 5, 7, 8, 10, 14, 16, 20 and 22 basically consisting of CM EH, RHB, CSP and SWB produced the best seedlings and treatment with CB as a main component or not produced the worst seedlings due to high electrical conductivity

  4. Some analytical characters of cottonseed varieties grown in Turkey

    Directory of Open Access Journals (Sweden)

    Nergiz, Cevdet

    1997-12-01

    Full Text Available Sixteen cottonseed varieties grown in Turkey were analysed. The average oil content in varieties ranged from 309.7g Kg-1 to 379.5g Kg-1 whereas the range in values of gossypol content for glanded varieties was 7.4-12.8g Kg-1. One glandless variety contained gossypol as 0.2g Kg-1. The samples contained 337.2- 466.5g Kg-1 protein. Fatty acid composition of the oils obtained from cottonseed varieties were also determined. Generally total gossypol content of cottonseed varieties were below the limits established by the some nations for human food or animal feed.

    Se han analizado dieciséis variedades de semillas de algodón cultivadas en Turquía. El contenido medio de aceite en las distintas variedades osciló entre 309,7g Kg-1 y 379,5g Kg-1 mientras que el contenido en gosipol para variedades con glándulas fue desde 7,4 a 12,8g Kg-1. Una variedad sin glándula tuvo un valor en gosipol de 0, Kg-1. El valor en proteínas de las muestras osciló entre 337,2 y 466,5g Kg-1. También se determinó la composición en ácidos grasos de los aceites obtenidos de las distintas variedades de semilla de algodón. Por lo general el contenido total en gosipol en las distintas variedades fue inferior a los límites establecidos por algunas naciones para su consumo humano o para alimentación animal.

  5. Secretome analysis of the fungus Trichoderma harzianum grown on cellulose.

    Science.gov (United States)

    Do Vale, Luis H F; Gómez-Mendoza, Diana P; Kim, Min-Sik; Pandey, Akhilesh; Ricart, Carlos A O; Ximenes F Filho, Edivaldo; Sousa, Marcelo V

    2012-08-01

    Trichoderma harzianum is a mycoparasitic filamentous fungus that produces and secretes a wide range of extracellular hydrolytic enzymes used in cell wall degradation. Due to its potential in biomass conversion, T. harzianum draws great attention from biofuel and biocontrol industries and research. Here, we report an extensive secretome analysis of T. harzianum. The fungus was grown on cellulose medium, and its secretome was analyzed by a combination of enzymology, 2DE, MALDI-MS and -MS/MS (Autoflex II), and LC-MS/MS (LTQ-Orbitrap XL). A total of 56 proteins were identified using high-resolution MS. Interestingly, although cellulases were found, the major hydrolytic enzymes secreted in the cellulose medium were chitinases and endochitinases, which may reflect the biocontrol feature of T. harzianum. The glycoside hydrolase family, including chitinases (EC 3.2.1.14), endo-N-acetylglucosaminidases (EC 3.2.1.96), hexosaminidases (EC 3.2.1.52), galactosidases (EC 3.2.1.23), xylanases (EC 3.2.1.8), exo-1,3-glucanases (EC 3.2.1.58), endoglucanases (EC 3.2.1.4), xylosidases (EC 3.2.1.37), α-L-arabinofuranosidase (EC 3.2.1.55), N-acetylhexosaminidases (EC 3.2.1.52), and other enzymes represented 51.36% of the total secretome. Few representatives were classified in the protease family (8.90%). Others (17.60%) are mostly intracellular proteins. A considerable part of the secretome was composed of hypothetical proteins (22.14%), probably because of the absence of an annotated T. harzianum genome. The T. harzianum secretome composition highlights the importance of this fungus as a rich source of hydrolytic enzymes for bioconversion and biocontrol applications. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Culturable endophytic bacterial communities associated with field-grown soybean.

    Science.gov (United States)

    de Almeida Lopes, K B; Carpentieri-Pipolo, V; Oro, T H; Stefani Pagliosa, E; Degrassi, G

    2016-03-01

    Assess the diversity of the culturable endophytic bacterial population associated with transgenic and nontransgenic soybean grown in field trial sites in Brazil and characterize them phenotypically and genotypically focusing on characteristics related to plant growth promotion. Endophytic bacteria were isolated from roots, stems and leaves of soybean cultivars (nontransgenic (C) and glyphosate-resistant (GR) transgenic soybean), including the isogenic BRS133 and BRS245RR. Significant differences were observed in bacterial densities in relation to genotype and tissue from which the isolates were obtained. The highest number of bacteria was observed in roots and in GR soybean. Based on characteristics related to plant growth promotion, 54 strains were identified by partial 16S rRNA sequence analysis, with most of the isolates belonging to the species Enterobacter ludwigii and Variovorax paradoxus. Among the isolates, 44·4% were able to either produce indoleacetic acid (IAA) or solubilize phosphates, and 9·2% (all from GR soybean) presented both plant growth-promoting activities. The results from this study indicate that the abundance of endophytic bacterial communities of soybean differs between cultivars and in general it was higher in the transgenic cultivars than in nontransgenic cultivars. BRS 245 RR exhibited no significant difference in abundance compared to nontransgenic BRS133. This suggests that the impact of the management used in the GR soybean fields was comparable with the impacts of some enviromental factors. However, the bacterial endophytes associated to GR and nontransgenic soybean were different. The soybean-associated bacteria showing characteristics related to plant growth promotion were identified as belonging to the species Pantoea agglomerans and Variovorax paradoxus. Our study demonstrated differences concerning compostion of culturable endophytic bacterial population in nontransgenic and transgenic soybean. © 2016 The Society for Applied

  7. Organic solar cells using CVD-grown graphene electrodes

    International Nuclear Information System (INIS)

    Kim, Hobeom; Han, Tae-Hee; Lim, Kyung-Geun; Lee, Tae-Woo; Bae, Sang-Hoon; Ahn, Jong-Hyun

    2014-01-01

    We report on the development of flexible organic solar cells (OSCs) incorporating graphene sheets synthesized by chemical vapor deposition (CVD) as transparent conducting electrodes on polyethylene terephthalate (PET) substrates. A key barrier that must be overcome for the successful fabrication of OSCs with graphene electrodes is the poor-film properties of water-based poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) when coated onto hydrophobic graphene surfaces. To form a uniform PEDOT:PSS film on a graphene surface, we added perfluorinated ionomers (PFI) to pristine PEDOT:PSS to create ‘GraHEL’, which we then successfully spin coated onto the graphene surface. We systematically investigated the effect of number of layers in layer-by-layer stacked graphene anode of an OSC on the performance parameters including the open-circuit voltage (V oc ), short-circuit current (J sc ), and fill factor (FF). As the number of graphene layers increased, the FF tended to increase owing to lower sheet resistance, while J sc tended to decrease owing to the lower light absorption. In light of this trade-off between sheet resistance and transmittance, we determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anodes, even at suboptimal sheet resistances. We finally developed efficient, flexible OSCs with a PCE of 4.33%, which is the highest efficiency attained so far by an OSC with CVD-grown graphene electrodes to the best of our knowledge. (paper)

  8. Textured YBCO films grown on wires: application to superconducting cables

    International Nuclear Information System (INIS)

    Dechoux, N; Jiménez, C; Chaudouët, P; Rapenne, L; Sarigiannidou, E; Robaut, F; Petit, S; Garaudée, S; Porcar, L; Soubeyroux, J L; Odier, P; Bruzek, C E; Decroux, M

    2012-01-01

    Efforts to fabricate superconducting wires made of YBa 2 Cu 3 O 7 (YBCO) on La 2 Zr 2 O 7 (LZO) buffered and biaxially textured Ni-5 at.%W (NiW) are described. Wires were manually shaped from LZO buffered NiW tapes. Different diameters were produced: 1.5, 2 and 3 mm. The wires were further covered with YBCO grown by metal organic chemical vapor deposition (MOCVD). We developed an original device in which the round substrate undergoes an alternated rotation of 180° around its axis in addition to a reel-to-reel translation. This new approach allows covering the whole circumference of the wire with a YBCO layer. This was confirmed by energy dispersive x-ray spectroscopy (EDX) analysis coupled to a scanning electron microscope (SEM). For all wire diameters, the YBCO layer thickness varied from 300 to 450 nm, and the cationic composition was respected. Electron backscattering diffraction (EBSD) measurements were performed directly on an as-deposited wire without surface preparation allowing the investigation of the crystalline quality of the film surface. Combining EBSD with XRD results we show that YBCO grows epitaxially on the LZO buffered NiW wires. For the first time, superconductive behaviors have been detected on round substrates in both the rolling and circular direction. J c reached 0.3 MA cm −2 as measured at 77 K by transport and third-harmonic detection. Those preliminary results confirm the effectiveness of the MOCVD for complex geometries, especially for YBCO deposition on small diameter wires. This approach opens huge perspectives for the elaboration of a new generation of YBCO-based round conductors. (paper)

  9. Nitrogen utilisation of lowland cauliflower grown on coconut coir dust

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Asiah

    2004-07-01

    Strong wind, high rainfall, the spread of diseases during rainy season and pests problems in open field agriculture have led to the current trend in growing vegetables under protected environment. The occurrence of soil borne disease, and limited suitable land for agriculture are some of the reasons to look for alternative media such as coconut coir dust. The basic properties of coconut coir dust as a soil less growing medium and the utilisation of nitrogen (n) fertiliser for the lowland cauliflower grown in them have not been thoroughly investigated and are therefore not well understood. This study has been conducted by the need to provide a basis for determining optimal levels/ concentration and forms of nitrogen supply, and by the need to minimize environmental consequences of lowland cauliflower production. It focuses on the effects of N supply in terms of different levels of N and ionic N forms in the nutrient solution, on the growth, development and N utilisation of cauliflower grown in coconut coir dust under greenhouse condition in the lowlands. Based on the plant growth parameters studied coconut coir dust was found to be more suitable than oil palm empty fruit bunch as a growing medium. From the growth and development study using coconut coir dust, it can be deduced that the N requirement by the plant is less at later growth stage regardless of low or high level of N in the nutrient solution. However, low level of N of 50 mg l{sup -1} was found to be inadequate for plant growth and curd yield. The N concentration levels of 200 mg l{sup -1} in the nutrient solution optimised both the vegetative and curd production. A somewhat lower level of N (170 mg l{sup -1}) produced curd weight not significantly different from N level of 200 mg l{sup -1}. The plant growth and curd yield was reduced by about 29.0 % at 400 mg N l{sup -1}. The N level of 400 mg l{sup -1} in the nutrient solution may be in excess to that actually required by the plant, resulting in a high

  10. Nitrogen utilisation of lowland cauliflower grown on coconut coir dust

    International Nuclear Information System (INIS)

    Asiah Ahmad

    2004-01-01

    Strong wind, high rainfall, the spread of diseases during rainy season and pests problems in open field agriculture have led to the current trend in growing vegetables under protected environment. The occurrence of soil borne disease, and limited suitable land for agriculture are some of the reasons to look for alternative media such as coconut coir dust. The basic properties of coconut coir dust as a soil less growing medium and the utilisation of nitrogen (n) fertiliser for the lowland cauliflower grown in them have not been thoroughly investigated and are therefore not well understood. This study has been conducted by the need to provide a basis for determining optimal levels/ concentration and forms of nitrogen supply, and by the need to minimize environmental consequences of lowland cauliflower production. It focuses on the effects of N supply in terms of different levels of N and ionic N forms in the nutrient solution, on the growth, development and N utilisation of cauliflower grown in coconut coir dust under greenhouse condition in the lowlands. Based on the plant growth parameters studied coconut coir dust was found to be more suitable than oil palm empty fruit bunch as a growing medium. From the growth and development study using coconut coir dust, it can be deduced that the N requirement by the plant is less at later growth stage regardless of low or high level of N in the nutrient solution. However, low level of N of 50 mg l -1 was found to be inadequate for plant growth and curd yield. The N concentration levels of 200 mg l -1 in the nutrient solution optimised both the vegetative and curd production. A somewhat lower level of N (170 mg l -1 ) produced curd weight not significantly different from N level of 200 mg l -1 . The plant growth and curd yield was reduced by about 29.0 % at 400 mg N l -1 . The N level of 400 mg l -1 in the nutrient solution may be in excess to that actually required by the plant, resulting in a high unused N nutrient

  11. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    International Nuclear Information System (INIS)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2012-01-01

    Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  12. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  13. Nucleoli from growing oocytes support the development of enucleolated full-grown oocytes in the pig.

    Science.gov (United States)

    Kyogoku, Hirohisa; Ogushi, Sugako; Miyano, Takashi

    2010-02-01

    Recent research has shown that the maternal nucleolus is essential for embryonic development. The morphology of the nucleolus in growing oocytes differs from that in full-grown oocytes. We determined the ability of nucleoli from growing oocytes to substitute for nucleoli of full-grown oocytes in terms of supporting embryonic development in this study. Growing (around 100 microm in diameter) and full-grown porcine oocytes (120 microm) were collected from small (0.6-1.0 mm) and large antral follicles (4-5 mm), respectively. The nucleolus was aspirated from full-grown oocytes by micromanipulation, and the resulting enucleolated oocytes were matured to metaphase II; the nucleoli originating from full-grown and growing oocytes were then injected into the oocytes. The Chromatin of growing oocytes was aspirated with the nucleolus during the enucleolation process. Growing oocytes were thus treated with actinomycin D to release the chromatin from their nucleoli, and the nucleoli were collected and transferred to the enucleolated and matured full-grown oocytes. After activation by electro-stimulation, nucleoli were formed in pronuclei of sham-operated oocytes. Enucleolated oocytes that had been injected with nucleoli from either full-grown or growing, however, did not form any nucleoli in the pronuclei. No enucleolated oocytes developed to blastocysts, whereas enucleolated oocytes injected with nucleoli from full-grown oocytes (15%) or growing oocytes (18%) developed to blastocysts. These results indicate that the nucleoli from growing oocytes can substitute for nucleoli from full-grown oocytes during early embryonic development. (c) 2009 Wiley-Liss, Inc.

  14. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  15. Heavy metals in Australian grown and imported rice and vegetables on sale in Australia: health hazard.

    Science.gov (United States)

    Rahman, M Azizur; Rahman, Mohammad Mahmudur; Reichman, Suzie M; Lim, Richard P; Naidu, Ravi

    2014-02-01

    Dietary exposure to heavy metals is a matter of concern for human health risk through the consumption of rice, vegetables and other major foodstuffs. In the present study, we investigated concentrations of cadmium (Cd), cobalt (Co), chromium (Cr), copper (Cu), manganese (Mn), nickel (Ni), lead (Pb), and zinc (Zn) in Australian grown and imported rice and vegetables on sale in Australia. The mean concentrations of Cd, Co, Cr, Cu, Mn, Ni, Pb, and Zn in Australian grown rice were 7.5 µg kg(-1), 21 µg kg(-1), 144 µg kg(-1), 2.9 mg kg(-1), 24.4 mg kg(-1), 166 µg kg(-1), 375 µg kg(-1), and 17.1 mg kg(-1) dry weight (d. wt.), respectively. Except Cd, heavy metal concentrations in Australian grown rice were higher than Bangladeshi rice on sale in Australia. However, the concentrations of Cd, Cr, Cu, and Ni in Indian rice on sale in Australia were higher than Australian grown rice. The concentrations of Cu and Ni in Vietnamese rice, and that of Cd, Cr, Cu, Ni, and Pb in Thai rice on sale in Australia were also higher than Australian grown rice. Heavy metal concentrations in Pakistani rice on sale in Australia were substantially lower than that in Australian grown rice. In Australian grown rice varieties, the concentrations of heavy metals were considerably higher in brown rice varieties than white rice varieties, indicating Australian brown rice as a potential source of dietary heavy metals for Australian consumers. The mean concentrations of heavy metals in Australian grown and Bangladeshi vegetables on sale in Australia were also determined. Some of the Australian grown and Bangladeshi vegetables contained heavy metals higher than Australian standard maximum limits indicating them as potential sources of dietary heavy metals for Australian consumers. Further investigation is required to estimate health risks of heavy metals from rice and vegetables consumption for Australian consumers. © 2013 Published by Elsevier Inc.

  16. Study of CdTe quantum dots grown using a two-step annealing method

    Science.gov (United States)

    Sharma, Kriti; Pandey, Praveen K.; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

    2006-02-01

    High size dispersion, large average radius of quantum dot and low-volume ratio has been a major hurdle in the development of quantum dot based devices. In the present paper, we have grown CdTe quantum dots in a borosilicate glass matrix using a two-step annealing method. Results of optical characterization and the theoretical model of absorption spectra have shown that quantum dots grown using two-step annealing have lower average radius, lesser size dispersion, higher volume ratio and higher decrease in bulk free energy as compared to quantum dots grown conventionally.

  17. Study on grown-in defects in CZ-Si by positron annihilation

    International Nuclear Information System (INIS)

    Nakagawa, S.; Hori, F.; Oshima, R.

    2004-01-01

    In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

  18. Characterization of Si(100) homoepitaxy grown in the STM at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Grube, H. (Holger); Brown, G. W. (Geoffrey W.); Pomeroy, J. M. (Joshua M.); Hawley, M. E. (Marilyn E.)

    2002-01-01

    We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic surface roughness and defects We characterize films grown at different temperatures up to 500K in-situ by means of an effusion cell added to our UHVSTM. The development of novel architectures for future generation computers calls for high-quality homoepitaxial (WOO) grown at low temperature. Even though Si(100) can be grown crystalline up to a limited thickness: the microstructure reveals significant small-scale surface roughness and defects specific to low-temperature growth. Both can he detrimental to fabrication and operation of small-scale electronic devices.

  19. The effect of substrate temperature upon the compositions of Mg and Se in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Nishio, M.; Ito, R.; Tanaka, K.; Urata, K.; Nakamura, Y.; Tanaka, T. [Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Saga University, 1 Honjo, Saga 840-8502 (Japan); Saito, K.; Guo, Q.X. [Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502 (Japan)

    2014-07-15

    The growth of Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layers was performed on (100) ZnTe substrate by metalorganic vapour phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl-magnesium, diethyltelluride and diethylselenide. The effects of substrate temperature upon the compositions of Mg and Se have been investigated. The Mg composition in Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer is significantly enhanced at low substrate temperature. Although the Se composition decreases with decreasing the substrate temperature, Zn{sub 1-x}Mg{sub x}Se{sub y}Te{sub 1-y} layer with a relatively high Se composition of 0.3 is obtainable at a low substrate temperature as low as 380 C. For all the layers, a two-mode behaviour with ZnTe- and MgTe-like longitudinal optical phonon modes is confirmed by Raman scattering. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Surface characterization of low-temperature grown yttrium oxide

    Science.gov (United States)

    Krawczyk, Mirosław; Lisowski, Wojciech; Pisarek, Marcin; Nikiforow, Kostiantyn; Jablonski, Aleksander

    2018-04-01

    The step-by-step growth of yttrium oxide layer was controlled in situ using X-ray photoelectron spectroscopy (XPS). The O/Y atomic concentration (AC) ratio in the surface layer of finally oxidized Y substrate was found to be equal to 1.48. The as-grown yttrium oxide layers were then analyzed ex situ using combination of Auger electron spectroscopy (AES), elastic-peak electron spectroscopy (EPES) and scanning electron microscopy (SEM) in order to characterize their surface chemical composition, electron transport phenomena and surface morphology. Prior to EPES measurements, the Y oxide surface was pre-sputtered by 3 kV argon ions, and the resulting AES-derived composition was found to be Y0.383O0.465C0.152 (O/Y AC ratio of 1.21). The SEM images revealed different surface morphology of sample before and after Ar sputtering. The oxide precipitates were observed on the top of un-sputtered Y oxide layer, whereas the oxide growth at the Ar ion-sputtered surface proceeded along defects lines normal to the layer plane. The inelastic mean free path (IMFP) characterizing electron transport was evaluated as a function of energy in the range of 0.5-2 keV from the EPES method. Two reference materials (Ni and Au) were used in these measurements. Experimental IMFPs determined for the Y0.383O0.465C0.152 and Y2O3 surface compositions, λ, were uncorrected for surface excitations and approximated by the simple function λ = kEp at electron energies E between 500 eV and 2000 eV, where k and p were fitted parameters. These values were also compared with IMFPs resulting from the TPP-2 M predictive equation for both oxide compositions. The fitted functions were found to be reasonably consistent with the measured and predicted IMFPs. In both cases, the average value of the mean percentage deviation from the fits varied between 5% and 37%. The IMFPs measured for Y0.383O0.465C0.152 surface composition were found to be similar to the IMFPs for Y2O3.

  1. Preliminary investigations of the rhizosphere nature of hydroponically grown lettuces

    Science.gov (United States)

    Antunes, Inês; Paille, Christel; Lasseur, Christophe

    Due to capabilities of current launchers, future manned exploration beyond the Earth orbit will imply long journeys and extended stays on planet surfaces. For this reason, it is of a great importance to develop a Regenerative Life Support System that enables the crew to be, to a very large extent, metabolic consumables self-sufficient. In this context, the European Space Agency, associated with a scientific and engineering con-sortium, initiated in 1989 the Micro-Ecological Life Support System Alternative (MELiSSA) project. This concept, inspired on a terrestrial ecosystem (i.e. a lake), comprises five intercon-nected compartments inhabited by micro-organisms and higher-plants aiming to produce food, fresh water, and oxygen from organic waste, carbon dioxide, and minerals. Given the important role of the higher-plant compartment for the consumption of carbon dioxide and the production of oxygen, potable water, and food, it was decided to study the microbial communities present in the root zone of the plants (i.e. the rhizosphere), and their synergistic and antagonistic influences in the plant growth. This understanding is important for later investigations concerning the technology involved in the higher plant compartment, since the final goal is to integrate this compartment inside the MELiSSA loop and to guarantee a healthy and controlled environment for the plants to grow under reduced-gravity conditions. To perform a preliminary assessment of the microbial populations of the root zone, lettuces were grown in a hydroponic system and their growth was characterized in terms of nutrient uptake, plant diameter, and plant wet and dry weights. In parallel, the microbial population, bacteria and fungi, present in the hydroponic medium and also inside and outside the roots were analyzed in terms of quantity and nature. The goal of this presentation is to give a preliminary review in the plant root zone of the micro-organisms communities and as well their proportions

  2. 76 FR 31295 - Nectarines and Peaches Grown in California; Notice of Withdrawal

    Science.gov (United States)

    2011-05-31

    ... forms to collect information related to the Federal marketing orders for nectarines and peaches grown in... FURTHER INFORMATION CONTACT: Andrew Hatch, Supervisory Marketing Specialist, Marketing Order... Email: [email protected] . SUPPLEMENTARY INFORMATION: Marketing Order Nos. 916 and 917...

  3. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shukrullah, S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Mohamed, N. M., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Shaharun, M. S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia); Yasar, M., E-mail: Muhammad.yasar@ieee.org [Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia)

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  4. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    Science.gov (United States)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  5. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Kalam, Amir Abul; Bae, Joon Ho [Dept. of Nano-physics, Gachon University, Seongnam (Korea, Republic of); Park, Soo Bin; Seo, Yong Ho [Nanotechnology and Advanced Material Engineering, HMC, and GRI, Sejong University, Seoul (Korea, Republic of)

    2015-08-15

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs.

  6. 77 FR 72197 - Pears Grown in Oregon and Washington; Assessment Rate Decrease for Processed Pears

    Science.gov (United States)

    2012-12-05

    ... Agricultural Statistics Service, the total farm-gate value of summer/fall processed pears grown in Oregon and... introductory text and paragraph (a) are revised to read as follows: Sec. 927.237 Processed pear assessment rate...

  7. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Kalam, Amir Abul; Bae, Joon Ho; Park, Soo Bin; Seo, Yong Ho

    2015-01-01

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs

  8. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Shukrullah, S.; Mohamed, N. M.; Shaharun, M. S.; Yasar, M.

    2014-01-01

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure

  9. Helicopter Parents and Landing Pad Kids: Intense Parental Support of Grown Children

    OpenAIRE

    Fingerman, Karen L.; Cheng, Yen-Pi; Wesselmann, Eric D.; Zarit, Steven; Furstenberg, Frank; Birditt, Kira S.

    2012-01-01

    Popular media describe adverse effects of helicopter parents who provide intense support to grown children, but few studies have examined implications of such intense support. Grown children (N = 592, M age = 23.82 years, 53% female, 35% members of racial/ethnic minority groups) and their parents (n = 399, M age = 50.67 years, 52% female; 34% members of racial/ethnic minority groups) reported on the support they exchanged with one another. Intense support involved parents’ providing several t...

  10. Nucleoli from growing oocytes inhibit the maturation of enucleolated, full-grown oocytes in the pig.

    Science.gov (United States)

    Kyogoku, Hirohisa; Ogushi, Sugako; Miyano, Takashi; Fulka, Josef

    2011-06-01

    In mammals, the nucleolus of full-grown oocyte is essential for embryonic development but not for oocyte maturation. In our study, the role of the growing oocyte nucleolus in oocyte maturation was examined by nucleolus removal and/or transfer into previously enucleolated, growing (around 100 µm in diameter) or full-grown (120 µm) pig oocytes. In the first experiment, the nucleoli were aspirated from growing oocytes whose nucleoli had been compacted by actinomycin D treatment, and the enucleolated oocytes were matured in vitro. Most of non-treated or actinomycin D-treated oocytes did not undergo germinal vesicle breakdown (GVBD; 13% and 12%, respectively). However, the GVBD rate of enucleolated, growing oocytes significantly increased to 46%. The low GVBD rate of enucleolated, growing oocytes was restored again by the re-injection of nucleoli from growing oocytes (23%), but not when nucleoli from full-grown oocytes were re-injected into enucleolated, growing oocytes (49%). When enucleolated, full-grown oocytes were injected with nucleoli from growing or full-grown oocytes, the nucleolus in the germinal vesicle was reassembled (73% and 60%, respectively). After maturation, the enucleolated, full-grown oocytes injected with nucleoli from full-grown oocytes matured to metaphase II (56%), whereas injection with growing-oocyte nucleoli reduced this maturation to 21%. These results suggest that the growing-oocyte nucleolus is involved in the oocyte's meiotic arrest, and that the full-grown oocyte nucleolus has lost the ability. Copyright © 2011 Wiley-Liss, Inc.

  11. TEM EDS analysis of epitaxially-grown self-assembled indium islands

    Directory of Open Access Journals (Sweden)

    Jasmine Sears

    2017-05-01

    Full Text Available Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM Energy Dispersive Spectroscopy (EDS. Several sizes of islands are examined, with larger islands exhibiting high (>94% average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.

  12. Composition of Whiskers Grown on Copper in Repository Environment

    International Nuclear Information System (INIS)

    Hermansson, Hans-Peter; Tarkpea, Peeter; Holgersson, Stellan

    2001-11-01

    There is a hypothesis that a special family of local attack on copper based on growth of whiskers of sulfide, oxide/hydroxide and also carbonate/malachite could appear in the repository environment. It was earlier demonstrated that such whiskers could grow in a laboratory simulated repository environment, containing sulfide. A suggested composition of whiskers has earlier been forwarded but was not demonstrated. In the present work whiskers and their substrates were grown and characterized by investigations with a combination of SEM-EDS, XRD and LRS (Laser Raman Spectroscopy) techniques. SEM-EDS was used to determine the morphology and an elemental composition and distribution of whiskers and their substrate. A special effort was made to find out if the whisker growth is of a local or global character. The phase status could be determined locally and globally by combining XRD and LRS techniques on whiskers and substrates. Ideally, LRS gives a phase resolution down to a radius of 1 μm on the sample surface. This is of great value as it is of interest to study if there are phase differences in different parts of a whisker. Such information is important to understand the whisker growth mechanism. Cylindrical samples of pure copper were prepared and exposed to the selected de-aerated model groundwater containing, among other ions, chloride and sulfide. Exposure was performed in sealed glass flasks under de-aerated conditions. After exposure the copper sample was investigated on the surface, in cross section and on whiskers using the mentioned techniques. The results show that a black, easily detached layer of corrosion products is formed on the sample surface. The corrosion layer was subdivided into at least five parallel strata (probably more) of different composition. Numerous small pits and shallow pitting attacks with a larger radius were observed in the copper metal and the metal surface was in general very rough. A multitude of very easily detached whiskers or

  13. Violaxanthin is an abscisic acid precursor in water-stressed dark-grown bean leaves

    International Nuclear Information System (INIS)

    Li, Yi; Walton, D.C.

    1990-01-01

    The leaves a dark-grown bean (Phaseolus vulgaris L.) seedlings accumulate considerably lower quantities of xanthophylls and carotenes than do leaves of light-grown seedlings, but they synthesize at least comparable amounts of abscisic acid (ABA) and its metabolites when water stressed. We observed a 1:1 relationship on a molar basis between the reduction in levels of ciolaxanthin, 9'-cis-neoxanthin, and 9-cis-violaxanthin and the accumulation of ABA, phaseic acid, and dihydrophaseic acid, when leaves from dark-grown plants were stressed for 7 hours. Early in the stress period, reductions in xanthophylls were greater than the accumulation of ABA and its metabolites, suggesting the accumulation of an intermediate which was subsequently converted to ABA. Leaves which were detached, but no stressed, did not accumulate ABA nor were their xanthophyll levels reduced. Leaves from plants that had been sprayed with cycloheximido did not accumulate ABA when stressed, nor were their xanthophyll levels reduced significantly. Incubation of dark-grown stressed leaves in an 18 O 2 -containing atmosphere resulted in the synthesis of ABA with levels of 18 O in the carboxyl group that were virtually identical to those observed in light-grown leaves. The results of these experiments indicate that violaxanthin is an ABA precursor in stressed dark-grown leaves, and they are used to suggest several possible pathways from violaxanthin to ABA

  14. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

  15. VLS-grown diffusion doped ZnO nanowires and their luminescence properties

    International Nuclear Information System (INIS)

    Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

    2015-01-01

    Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

  16. Violaxanthin is an abscisic acid precursor in water-stressed dark-grown bean leaves

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yi; Walton, D.C. (State Univ. of New York, Syracuse (USA))

    1990-03-01

    The leaves a dark-grown bean (Phaseolus vulgaris L.) seedlings accumulate considerably lower quantities of xanthophylls and carotenes than do leaves of light-grown seedlings, but they synthesize at least comparable amounts of abscisic acid (ABA) and its metabolites when water stressed. We observed a 1:1 relationship on a molar basis between the reduction in levels of ciolaxanthin, 9{prime}-cis-neoxanthin, and 9-cis-violaxanthin and the accumulation of ABA, phaseic acid, and dihydrophaseic acid, when leaves from dark-grown plants were stressed for 7 hours. Early in the stress period, reductions in xanthophylls were greater than the accumulation of ABA and its metabolites, suggesting the accumulation of an intermediate which was subsequently converted to ABA. Leaves which were detached, but no stressed, did not accumulate ABA nor were their xanthophyll levels reduced. Leaves from plants that had been sprayed with cycloheximido did not accumulate ABA when stressed, nor were their xanthophyll levels reduced significantly. Incubation of dark-grown stressed leaves in an {sup 18}O{sub 2}-containing atmosphere resulted in the synthesis of ABA with levels of {sup 18}O in the carboxyl group that were virtually identical to those observed in light-grown leaves. The results of these experiments indicate that violaxanthin is an ABA precursor in stressed dark-grown leaves, and they are used to suggest several possible pathways from violaxanthin to ABA.

  17. MOCVD epitaxy of InAlN on different templates

    International Nuclear Information System (INIS)

    Yun Lijun; Wei Tongbo; Yan Jianchang; Liu Zhe; Wang Junxi; Li Jinmin

    2011-01-01

    InAlN epilayers were grown on high quality GaN and AlN templates with the same growth parameters. Measurement results showed that two samples had the same In content of ∼ 16%, while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template, with 282.3 (002) full width at half maximum (FWHM) of rocking curve, 313.5 (102) FWHM, surface roughness of 0.39 nm and V-pit density of 2.8 x 10 8 cm -2 , were better than that of the InAlN epilayer grown on the GaN template, 309.3, 339.1, 0.593 nm and 4.2 x 10 8 cm -2 . A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore, the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers. (semiconductor materials)

  18. Hydraulics and gas exchange recover more rapidly from severe drought stress in small pot-grown grapevines than in field-grown plants.

    Science.gov (United States)

    Romero, Pascual; Botía, Pablo; Keller, Markus

    2017-09-01

    Modifications of plant hydraulics and shoot resistances (R shoot ) induced by water withholding followed by rewatering, and their relationships with plant water status, leaf gas exchange and water use efficiency at the leaf level, were investigated in pot-grown and field-grown, own-rooted Syrah grapevines in an arid climate. Water stress induced anisohydric behavior, gradually reducing stomatal conductance (g s ) and leaf photosynthesis (A) in response to decreasing midday stem water potential (Ψ s ). Water stress also rapidly increased intrinsic water-use efficiency (A/g s ); this effect persisted for many days after rewatering. Whole-plant (K plant ), canopy (K canopy ), shoot (K shoot ) and leaf (K leaf ) hydraulic conductances decreased during water stress, in tune with the gradual decrease in Ψ s , leaf gas exchange and whole plant water use. Water-stressed vines also had a lower Ψ gradient between stem and leaf (ΔΨ l ), which was correlated with lower leaf transpiration rate (E). E and ΔΨ l increased with increasing vapour pressure deficit (VPD) in non-stressed control vines but not in stressed vines. Perfusion of xylem-mobile dye showed that water flow to petioles and leaves was substantially reduced or even stopped under moderate and severe drought stress. Leaf blade hydraulic resistance accounted for most of the total shoot resistance. However, hydraulic conductance of the whole root system (K root ) was not significantly reduced until water stress became very severe in pot-grown vines. Significant correlations between K plant , K canopy and Ψ s , K canopy and leaf gas exchange, K leaf and Ψ s , and K leaf and A support a link between water supply, leaf water status and gas exchange. Upon re-watering, Ψ s recovered faster than gas exchange and leaf-shoot hydraulics. A gradual recovery of hydraulic functionality of plant organs was also observed, the leaves being the last to recover after rewatering. In pot-grown vines, K canopy recovered rather

  19. Fast-grown CdS quantum dots: Single-source precursor approach vs microwave route

    Energy Technology Data Exchange (ETDEWEB)

    Fregnaux, Mathieu [Laboratoire de Chimie et Physique: Approche Multi-échelles des Milieux Complexes, Institut Jean Barriol, Université de Lorraine, 1 Boulevard Arago, 57070 Metz (France); Dalmasso, Stéphane, E-mail: stephane.dalmasso@univ-lorraine.fr [Laboratoire de Chimie et Physique: Approche Multi-échelles des Milieux Complexes, Institut Jean Barriol, Université de Lorraine, 1 Boulevard Arago, 57070 Metz (France); Durand, Pierrick [Laboratoire de Cristallographie, Résonance Magnétique et Modélisations, Institut Jean Barriol, Université de Lorraine, UMR CNRS 7036, Faculté des Sciences, BP 70239, 54506 Vandoeuvre lès Nancy (France); Zhang, Yudong [Laboratoire d' Etude des Microstructures et de Mécanique des Matériaux, Université de Lorraine, UMR CNRS 7239, Ile du Saulcy, 57045 Metz cedex 01 (France); Gaumet, Jean-Jacques; Laurenti, Jean-Pierre [Laboratoire de Chimie et Physique: Approche Multi-échelles des Milieux Complexes, Institut Jean Barriol, Université de Lorraine, 1 Boulevard Arago, 57070 Metz (France)

    2013-10-01

    A cross-disciplinary protocol of characterization by joint techniques enables one to closely compare chemical and physical properties of CdS quantum dots (QDs) grown by single source precursor methodology (SSPM) or by microwave synthetic route (MWSR). The results are discussed in relation with the synthesis protocols. The QD average sizes, reproducible as a function of the temperatures involved in the growth processes, range complementarily in 2.8–4.5 nm and 4.5–5.2 nm for SSPM and MWSR, respectively. Hexagonal and cubic structures after X-ray diffraction on SSPM and MWSR grown CdS QDs, respectively, are tentatively correlated to a better crystalline quality of the latter with respect to the further ones, suggested by (i) a remarkable stability of the MWSR grown QDs after exposure to air during several days and (ii) no evidence of their fragmentation during mass spectrometry (MS) analyses, after a fair agreement between size dispersities obtained by transmission electron microscopy (TEM) and MS, in contrast with the discrepancy found for the SSPM grown QDs. Correlatively, a better optical quality is suggested for the MWSR grown QDs by the resolution of n > 1 excitonic transitions in their absorption spectra. The QD average sizes obtained by TEM and deduced from MS are in overall agreement. This agreement is improved for the MWSR grown QDs, taking into account a prolate shape of the QDs also observed in the TEM images. For both series of samples, the excitonic responses vs the average sizes are consistent with the commonly admitted empirical energy-size correspondence. A low energy PL band is observed in the case of the SSPM grown QDs. Its decrease in intensity with QD size increase suggests a surface origin tentatively attributed to S vacancies. In the case of the MWSR grown QDs, the absence of this PL is tentatively correlated to an absence of S vacancies and therefore to the stable behavior observed when the QDs are exposed to air. - Highlights: • Single

  20. Protein profile of mouse ovarian follicles grown in vitro.

    Science.gov (United States)

    Anastácio, Amandine; Rodriguez-Wallberg, Kenny A; Chardonnet, Solenne; Pionneau, Cédric; Fédérici, Christian; Almeida Santos, Teresa; Poirot, Catherine

    2017-12-01

    Could the follicle proteome be mapped by identifying specific proteins that are common or differ between three developmental stages from the secondary follicle (SF) to the antrum-like stage? From a total of 1401 proteins identified in the follicles, 609 were common to the three developmental stages investigated and 444 were found uniquely at one of the stages. The importance of the follicle as a functional structure has been recognized; however, up-to-date the proteome of the whole follicle has not been described. A few studies using proteomics have previously reported on either isolated fully-grown oocytes before or after meiosis resumption or cumulus cells. The experimental design included a validated mice model for isolation and individual culture of SFs. The system was chosen as it allows continuous evaluation of follicle growth and selection of follicles for analysis at pre-determined developmental stages: SF, complete Slavjanski membrane rupture (SMR) and antrum-like cavity (AF). The experiments were repeated 13 times independently to acquire the material that was analyzed by proteomics. SFs (n = 2166) were isolated from B6CBA/F1 female mice (n = 42), 12 days old, from 15 l. About half of the follicles isolated as SF were analyzed as such (n = 1143) and pooled to obtain 139 μg of extracted protein. Both SMR (n = 359) and AF (n = 124) were obtained after individual culture of 1023 follicles in a microdrop system under oil, selected for analysis and pooled, to obtain 339 μg and 170 μg of protein, respectively. The follicle proteome was analyzed combining isoelectric focusing (IEF) fractionation with 1D and 2D LC-MS/MS analysis to enhance protein identification. The three protein lists were submitted to the 'Compare gene list' tool in the PANTHER website to gain insights on the Gene Ontology Biological processes present and to Ingenuity Pathway Analysis to highlight protein networks. A label-free quantification was performed with 1D LC-MS/MS analyses to

  1. Loblolly pine grown under elevated CO2 affects early instar pine sawfly performance.

    Science.gov (United States)

    Williams, R S; Lincoln, D E; Thomas, R B

    1994-06-01

    Seedlings of loblolly pine Pinus taeda (L.), were grown in open-topped field chambers under three CO 2 regimes: ambient, 150 μl l -1 CO 2 above ambient, and 300 μl l -1 CO 2 above ambient. A fourth, non-chambered ambient treatment was included to assess chamber effects. Needles were used in 96 h feeding trials to determine the performance of young, second instar larvae of loblolly pine's principal leaf herbivore, red-headed pine sawfly, Neodiprion lecontei (Fitch). The relative consumption rate of larvae significantly increased on plants grown under elevated CO 2 , and needles grown in the highest CO 2 regime were consumed 21% more rapidly than needles grown in ambient CO 2 . Both the significant decline in leaf nitrogen content and the substantial increase in leaf starch content contributed to a significant increase in the starch:nitrogen ratio in plants grown in elevated CO 2 . Insect consumption rate was negatively related to leaf nitrogen content and positively related to the starch:nitrogen ratio. Of the four volatile leaf monoterpenes measured, only β-pinene exhibited a significant CO 2 effect and declined in plants grown in elevated CO 2 . Although consumption changed, the relative growth rates of larvae were not different among CO 2 treatments. Despite lower nitrogen consumption rates by larvae feeding on the plants grown in elevated CO 2 , nitrogen accumulation rates were the same for all treatments due to a significant increase in nitrogen utilization efficiency. The ability of this insect to respond at an early, potentially susceptible larval stage to poorer food quality and declining levels of a leaf monoterpene suggest that changes in needle quality within pines in future elevated-CO 2 atmospheres may not especially affect young insects and that tree-feeding sawflies may respond in a manner similar to herb-feeding lepidopterans.

  2. Spectral quality affects disease development of three pathogens on hydroponically grown plants

    Science.gov (United States)

    Schuerger, A. C.; Brown, C. S.; Sager, J. C. (Principal Investigator)

    1997-01-01

    Plants were grown under light-emitting diode (LED) arrays with various spectra to determine the effects of light quality on the development of diseases caused by tomato mosaic virus (ToMV) on pepper (Capsicum annuum L.), powdery mildew [Sphaerotheca fuliginea (Schlectend:Fr.) Pollaci] on cucumber (Cucumis sativus L.), and bacterial wilt (Pseudomonas solanacearum Smith) on tomato (Lycopersicon esculentum Mill.). One LED (660) array supplied 99% red light at 660 nm (25 nm bandwidth at half-peak height) and 1% far-red light between 700 to 800 nm. A second LED (660/735) array supplied 83% red light at 660 nm and 17% far-red light at 735 nm (25 nm bandwidth at half-peak height). A third LED (660/BF) array supplied 98% red light at 660 nm, 1% blue light (BF) between 350 to 550 nm, and 1% far-red light between 700 to 800 nm. Control plants were grown under broad-spectrum metal halide (MH) lamps. Plants were grown at a mean photon flux (300 to 800 nm) of 330 micromoles m-2 s-1 under a 12-h day/night photoperiod. Spectral quality affected each pathosystem differently. In the ToMV/pepper pathosystem, disease symptoms developed slower and were less severe in plants grown under light sources that contained blue and UV-A wavelengths (MH and 660/BF treatments) compared to plants grown under light sources that lacked blue and UV-A wavelengths (660 and 660/735 LED arrays). In contrast, the number of colonies per leaf was highest and the mean colony diameters of S. fuliginea on cucumber plants were largest on leaves grown under the MH lamp (highest amount of blue and UV-A light) and least on leaves grown under the 660 LED array (no blue or UV-A light). The addition of far-red irradiation to the primary light source in the 660/735 LED array increased the colony counts per leaf in the S. fuliginea/cucumber pathosystem compared to the red-only (660) LED array. In the P. solanacearum/tomato pathosystem, disease symptoms were less severe in plants grown under the 660 LED array, but the

  3. Growth and electrical properties of AlOx grown by mist chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Toshiyuki Kawaharamura

    2013-03-01

    Full Text Available Aluminum oxide (AlOx thin films were grown using aluminum acetylacetonate (Al(acac3 as a source solute by mist chemical vapor deposition (mist CVD. The AlOx thin films grown at temperatures above 400°C exhibited a breakdown field (EBD over 6 MV/cm and a dielectric constant (κ over 6. It is suggested that residual OH bonding in the AlOx thin films grown at temperatures below 375°C caused degradation of the breakdown field (EBD. With FC type mist CVD, the reaction proceeded efficiently (Ea = 22–24 kJ/mol because the solvent, especially H2O, worked as a stronger oxygen source. The AlOx film could be grown at 450°C with a high deposition rate (23 nm/min and smooth surface (RMS = 1.5 nm. Moreover, the AlOx thin films grown by mist CVD had excellent practicality as insulators because the gate leakage current (IG of the oxide thin film transistor (TFT with an IGZO/AlOx stack was suppressed below 1 pA at a gate voltage (VG of 20 V.

  4. Increased sensitivity of the respiratory system of plants grown in Gibberellic acid toward fluoride

    Energy Technology Data Exchange (ETDEWEB)

    Lustinec, J; Pokorna, V; Ruzicka, J

    1962-01-01

    Gibberellic acid in concentrations between 2 and 80 mg/l does not affect the ratio of radioactivities of /sup 14/CO/sub 2/ liberated from glucose-6-/sup 14/C and -1-/sup 14/C(C/sub 6//C/sub 1/) when acting for several hours on sliced wheat leaves, and that at a concentration of 10 mg/l it does not alter the degree of inhibition of respiration due to fluoride, iodoacetate and malonate or the consumption of oxygen. A linear relationship was established between the decrease in /sup 14/CO/sub 2/ liberation from glucose-/sup 14/C and the concentration of gibberellic acid. The C/sub 6//C/sub 1/ ratio as well as the absolute values of radioactivity decrease more rapidly in the course of several days after the germination of plants grown in a solution of gibberellic acid (10-20 mg/l) than in the water-grown controls. Fluoride inhibits the respiration of plants grown in gibberellic acid more than of those grown in water, its tissue concentration being either equal or less in the gibberellic -grown plants; the effect of iodoacetate and malonate is the same with plants of equal age (4 days) in both variants. 11 references, 1 figure, 4 tables.

  5. Zn-vacancy related defects in ZnO grown by pulsed laser deposition

    Science.gov (United States)

    Ling, F. C. C.; Luo, C. Q.; Wang, Z. L.; Anwand, W.; Wagner, A.

    2017-02-01

    Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

  6. Growth and Flowering Responses of Cut Chrysanthemum Grown under Restricted Root Volume to Irrigation Frequency

    Directory of Open Access Journals (Sweden)

    Viyachai Taweesak

    2014-01-01

    Full Text Available Influences of irrigation frequency on the growth and flowering of chrysanthemum grown under restricted root volume were tested. Chrysanthemum cuttings (Chrysanthemum morifolium “Reagan White” were grown in seedling tray which contained coconut peat in volumes of 73 and 140 cm3. Plants were irrigated with drip irrigation at irrigation frequencies of 4 (266 mL, 6 (400 mL, and 8 (533 mL times/day to observe their growth and flowering performances. There was interaction between irrigation frequency and substrate volume on plant height of chrysanthemum. Plants grown in 140 cm3 substrates and irrigated 6 times/day produced the tallest plant of 109.25 cm. Plants irrigated 6 and 8 times/day had significantly higher level of phosphorus content in their leaves than those plants irrigated 4 times/day. The total leaf area, number of internodes, leaf length, and leaf width of chrysanthemums grown in 140 cm3 substrate were significantly higher than those grown in 73 cm3 substrate. The numbers of flowers were affected by both irrigation frequencies and substrate volumes. Chrysanthemums irrigated 8 times/day had an average of 19.56 flowers while those irrigated 4 times/day had an average of 16.63 flowers. Increasing irrigation frequency can improve the growth and flowering of chrysanthemums in small substrate volumes.

  7. EVALUATION OF ANTIBACTERIAL, ANTITUMOR, ANTIOXIDANT ACTIVITIES AND PHENOLIC CONSTITUENTS OF FIELD-GROWN AND IN VITRO-GROWN LYSIMACHIA VULGARIS L.

    Science.gov (United States)

    Yildirim, Arzu Birinci; Guner, Birgul; Karakas, Fatma Pehlivan; Turker, Arzu Ucar

    2017-01-01

    Lysimachia vulgaris L. (Yellow loosestrife) is a medicinal plant in the family Myrsinaceae. It has been used in the treatment of fever, ulcer, diarrhea and wounds in folk medicine. It has also analgesic, expectorant, astringent and anti-inflammatory activities. Two different sources of the plant (field-grown and in vitro -grown) were used to evaluate the biological activities (antibacterial, antitumor and antioxidant) of L. vulgaris. In vitro-grown plant materials were collected from L. vulgaris plants that were previously regenerated in our laboratory. Plant materials were extracted with water, ethanol and acetone. For antibacterial test, disc diffusion method and 10 different pathogenic bacteria were used. Antioxidant activity was indicated by using DPPH method. The total phenol amount by using Folin-Ciocaltaeu method and the total flavonoid amount by using aluminum chloride (AlCl 3 ) colorimetric method were determined. Generally, yellow loosestrife extracts demonstrated antibacterial activity against Gram-positive bacteria (Staphylococcus aureus, S. epidermidis and Streptococcus pyogenes) . Strong antitumor activity of yellow loosestrife was observed via potato disc diffusion bioassay. Nine different phenolics were also determined and compared by using High-Performance Liquid Chromatography (HPLC). Future investigations should be focused on fractionation of the extracts to identify active components for biological activity.

  8. Fabrication of in-situ grown graphene reinforced Cu matrix composites

    Science.gov (United States)

    Chen, Yakun; Zhang, Xiang; Liu, Enzuo; He, Chunnian; Shi, Chunsheng; Li, Jiajun; Nash, Philip; Zhao, Naiqin

    2016-01-01

    Graphene/Cu composites were fabricated through a graphene in-situ grown approach, which involved ball-milling of Cu powders with PMMA as solid carbon source, in-situ growth of graphene on flaky Cu powders and vacuum hot-press sintering. SEM and TEM characterization results indicated that graphene in-situ grown on Cu powders guaranteed a homogeneous dispersion and a good combination between graphene and Cu matrix, as well as the intact structure of graphene, which was beneficial to its strengthening effect. The yield strength of 244 MPa and tensile strength of 274 MPa were achieved in the composite with 0.95 wt.% graphene, which were separately 177% and 27.4% enhancement over pure Cu. Strengthening effect of in-situ grown graphene in the matrix was contributed to load transfer and dislocation strengthening. PMID:26763313

  9. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sallet, Vincent; Falyouni, Farid; Marzouki, Ali; Haneche, Nadia; Sartel, Corinne; Lusson, Alain; Galtier, Pierre [Groupe d' Etude de la Matiere Condensee (GEMAC), CNRS-Universite de Versailles St-Quentin, Meudon (France); Agouram, Said [SCSIE, Universitat de Valencia, Burjassot (Spain); Enouz-Vedrenne, Shaima [Thales Research and Technology France, Palaiseau (France); Munoz-Sanjose, Vicente [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, Burjassot (Spain)

    2010-07-15

    Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Surface characterization of ZnO nanorods grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mbulanga, C.M., E-mail: crispin.mbulanga@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Urgessa, Z.N.; Tankio Djiokap, S.R.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Duvenhage, M.M.; Swart, H.C. [Department of Physics, University of the Free State, P.O Box 77000, Bloemfontein ZA9300 (South Africa)

    2016-01-01

    The surface composition of as-grown and annealed ZnO nanorods (ZNs) grown by a two-step chemical bath deposition method is investigated by the following surface-sensitive techniques: Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The presence of H on the surface and throughout the entire thickness of ZNs is confirmed by TOF-SIMS. Based on TOF-SIMS results, the O2 XPS peak mostly observable at ~531.5 is assigned to O bound to H. Furthermore, it is found that the near surface region of as-grown ZNs is Zn-rich, and annealing at high temperature (~850 °C) removes H-related defects from the surface of ZNs and affect the balance of zinc and oxygen concentrations.

  11. Field emission from carbon nanotube bundle arrays grown on self-aligned ZnO nanorods

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Ai Lei; Xiang Qi; Zhao Dongshan; Pan Chunxu; Zhao Xingzhong

    2007-01-01

    The field emission (FE) properties of carbon nanotube (CNT) bundle arrays grown on vertically self-aligned ZnO nanorods (ZNRs) are reported. The ZNRs were first synthesized on ZnO-seed-coated Si substrate by the vapour phase transport method, and then the radically grown CNTs were grown directly on the surface of the ZNRs from ethanol flames. The CNT/ZNR composite showed a turn-on field of 1.5 V μm -1 (at 0.1 μA cm -2 ), a threshold field of 4.5 V μm -1 (at 1 mA cm -2 ) and a stable emission current with fluctuations of 5%, demonstrating significantly enhanced FE of ZNRs due to the low work function and high aspect ratio of the CNTs, and large surface-to-volume ratio of the underlying ZNRs

  12. Low temperature grown GaNAsSb: A promising material for photoconductive switch application

    Energy Technology Data Exchange (ETDEWEB)

    Tan, K. H.; Yoon, S. F.; Wicaksono, S.; Loke, W. K.; Li, D. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Saadsaoud, N.; Tripon-Canseliet, C. [Laboratoire d' Electronique et Electromagnétisme, Pierre and Marie Curie University, 4 Place Jussieu, 75005 Paris (France); Lampin, J. F.; Decoster, D. [Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, Universite des Sciences et Technologies de Lille, BP 60069, 59652 Villeneuve d' Ascq Cedex (France); Chazelas, J. [Thales Airborne Systems, 2 Avenue Gay Lussac, 78852 Elancourt (France)

    2013-09-09

    We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 10{sup 7} Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

  13. Nitrogen and amino acids content in lake Drukshyaj plancton organisms biocenoses grown in model experiments

    International Nuclear Information System (INIS)

    Krevsh, A.V.; Budrene, S.F.; Yankyavichyus, K.K.

    1989-01-01

    Biocenoses growth in lake Drukshyaj (from 1984 water reservoir of the Ignalina NPP) collected in July 1985 and grown in 2 various in composition culture media: in medium close in composition of main minerals to water of high capacity reservoir (medium 1) and in medium Fitzjarld (medium 2), has shown that the medium affects the component composition of plancton, as well as dominating types of algae. Phytoplancton was dominating component in biomass in both media. In medium 1 dominate green and diatoms, in medium 2 - blue-green algae. Content of proteins and amino acids in biomass changed depending on duration of biocenoses growth when dominating green and diatoms in biocenoses mass grown in medium 1, it reached maximum on the 15th day, and when dominating blue-green algae in biocenoses biomass grown in medium 2 - on the 30th day

  14. Observation of Zn vacancies in ZnO grown by chemical vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Tuomisto, F.; Saarinen, K. [Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 TKK (Finland); Grasza, K.; Mycielski, A. [Institute of Physics, Polish Academy of Sciences, Lotnikow 32/46, 02-668 Warsaw (Poland)

    2006-03-15

    We have used positron annihilation spectroscopy to study the vacancy defects in ZnO crystals grown by both the conventional and contactless chemical vapor transport (CVT and CCVT). Our results show that Zn vacancies or Zn vacancy related defects are present in as-grown ZnO, irrespective of the growth method. Zn vacancies are observed in CVT-grown undoped ZnO and (Zn,Mn)O. The Zn vacancies present in undoped CCVT-ZnO are the dominant negatively charged point defect in the material. Doping the material with As introduces also Zn vacancy-related defect complexes with larger open volume. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  16. Influence of Si-doping on heteroepitaxially grown a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Bastek, Barbara; Noltemeyer, Martin; Hempel, Thomas; Rohrbeck, Antje; Witte, Hartmut; Veit, Peter; Blaesing, Juergen; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-Universitaet Magdeburg, FNW/IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

    2011-07-01

    Si-doped a-plane GaN samples with nominal doping levels up to 10{sup 20} cm{sup -3} were grown on r-plane sapphire by metal organic vapor phase epitaxy. Silane flow rates higher than 59 nmol/min lead to three dimensional grown crystallites as revealed by scanning electron microscopy. High resolution X-ray diffraction, photoluminescence and cathodoluminescence suggest considerably reduced defect densities in the large micrometer-sized GaN crystallites. Especially, transmission electron microscopy images verify a very low density of basal plane stacking faults less than 10{sup 4} cm{sup -1} in these crystallites consisting of heteroepitaxially grown a-plane GaN. In our presentation the influence of the Si doping on the basal plane stacking faults will be discussed.

  17. The performance studies of DKDP crystals grown by a rapid horizontal growth method

    Science.gov (United States)

    Xie, Xiaoyi; Qi, Hongji; Wang, Bin; Wang, Hu; Chen, Duanyang; Shao, Jianda

    2018-04-01

    A deuterated potassium dihydrogen phosphate (DKDP) crystal with about 70% deuterium level was grown by a rapid horizontal growth method with independent design equipment, which includes a continuous filtration system. The cooling program during crystal growth was designed according to a self-developed software to catch the size of growing crystal in real time. The crystal structure, optical performance and laser induced damage threshold (LIDT) of this DKDP crystal were investigated in this paper. The deuterium concentration of the crystal was confirmed by the neutron diffraction technique, which was effective and available in determining a complete range of deuteration level. The dielectric property was measured to evaluate the perfection of the lattice. The transmittance and LIDT were carried out further to evaluate the optical and functional properties of this DKDP crystal grown in the rapid horizontal growth technique. All of the detailed characterization for DKDP figured out that the 70% deuterated KDP crystal grown in this way had relatively good qualities.

  18. Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption

    International Nuclear Information System (INIS)

    Kim, Jungsub; Yang, Changjae; Sim, Uk; Lee, Jaeyel; Yoon, Euijoon; Lee, Youngsoo

    2009-01-01

    We investigated the morphological and optical properties of InAs quantum dots (QDs) grown by using periodic arsine interruption (PAI) and compared them with QDs grown conventionally. In the conventional growth, the formation of large islands was observed, which suppresses the nucleation and growth of QDs. Furthermore, the growth of capping layers was significantly degraded by these large islands. On the other hand, in the PAI growth, the formation of large islands was completely suppressed, resulting in the increase of the density and aspect ratio of QDs and the uniform growth of capping layers. As a result of photoluminescence (PL) measurements, we found that the emission efficiency was enhanced and the full-width-half-maximum was reduced to 32 meV. The temperature dependence of these optical properties also revealed the enhancement of the uniformity of QDs grown by the PAI method.

  19. Use of Kelvin probe force microscopy for identification of CVD grown graphene flakes on copper foil

    Science.gov (United States)

    Kumar, Rakesh; Mehta, B. R.; Kanjilal, D.

    2017-05-01

    Graphene flakes have been grown by chemical vapour deposition (CVD) method on Cu foils. The obtained graphene flakes have been characterized by optical microscopy, field emission scanning electron microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy. The graphene flakes grown on Cu foil comprise mainly single layer graphene and confirm that the nucleation for graphene growth starts very quickly. Moreover, KPFM has been found to be a valuable technique to differentiate between covered and uncovered portion of Cu foil by graphene flakes deposited for shorter duration. The results show that KPFM can be a very useful technique in understanding the mechanism of graphene growth.

  20. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  1. Lead, arsenic, and copper content of crops grown on lead arsenate-treated and untreated soils

    Energy Technology Data Exchange (ETDEWEB)

    Chisholm, D

    1972-01-01

    Increased lead and arsenic concentrations in the surface soil (0-15 cm), resulting from applications of lead arsenate (PbHAs0/sub 1/), increased both lead and arsenic levels in crops grown on treated plots. The lead levels in some crops approached or exceeded the Canadian residue tolerance of 2.0 ppM. Lead arsenate soil treatments did not affect copper absorption by crops. On areas such as old orchard land contaminated with lead arsenate residues it may be advisable to ascertain crops, and also to determine the lead affinity and arsenic sensitivity of the plants to be grown.

  2. GaSb grown from Sn solvent at low temperatures by LPE

    Energy Technology Data Exchange (ETDEWEB)

    Compean, V H; Anda, F de; Mishurnyi, V A; Gorbatchev, A Yu, E-mail: fdeanda@cactus.iico.uaslp.m [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico)

    2009-05-01

    The LPE growth of GaSb using Sn as a solvent has been studied in the temperature range 250-370 C and using liquid solutions covering a wide range of compositions. In order to find the growth conditions the phase diagram has been determined experimentally around the same temperature region. It is shown the Sn incorporates into the grown layers and that it behaves as an acceptor. The photoluminescence spectra of the grown layers with different Sn contents show characteristic peaks that can be attributed to different recombination processes.

  3. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  4. Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

    Science.gov (United States)

    Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

    2016-02-01

    The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

  5. Fabrication of radiation detectors with HgI2 crystals grown from a solution

    International Nuclear Information System (INIS)

    Friant, Alain; Mellet, Jean; Saliou, Charles; Mohammed Brahim, Tayeb.

    1979-01-01

    Mercuric Iodide crystals grown from a solution of molecular complexes with dimethylsulfoxide have been evaluated as γ-ray and X-ray room temperature detectors. Compared with materials grown from the vapor phase these crystals are characterized by a larger size, a lower level of native defects, but a higher impurity level. Detector technology, X-ray and γ-ray (up to 662 keV) detection properties and characterization measurements (T.S.C., photoconductivity, photovoltaic effect) are described. The effect of light on crystal properties is briefly discussed [fr

  6. Growth and antimicrobial studies of γ-glycine crystal grown using CuSO4

    Science.gov (United States)

    Vijayalakshmi, V.; Dhanasekaran, P.

    2018-05-01

    In the current work single crystals of pure and 1M of CuSO4-added glycine were grown by slow evaporation method and its optical and antimicrobial properties were studied. The Polymorph of glycine transforms from a-glycine to γ-glycine due to the incorporation of CuSO4 on glycine was affirmed by the PXRD and FTIR studies. The impact of CuSO4 on the antimicrobial action of the grown samples was deliberate by utilizing the agar diffusion method.

  7. Anisotropy of electrical resistivity in PVT grown WSe2-x crystals

    Science.gov (United States)

    Solanki, G. K.; Patel, Y. A.; Agarwal, M. K.

    2018-05-01

    Single crystals of p-type WSe2 and WSe1.9 were grown by a physical vapour transport technique. The anisotropy in d.c. electrical resistivity was investigated in these grown crystals. The off-stoichiometric WSe1.9 exhibited a higher anisotropy ratio as compared to WSe2 crystals. The electron microscopic examination revealed the presence of a large number of stacking faults in these crystals. The resistivity enhancement along the c-axis and anisotropic effective mass ratio explained on the basis of structural disorder introduced due to off-stoichiometry.

  8. Highest-order optical phonon-mediated relaxation in CdTe/ZnTe quantum dots

    International Nuclear Information System (INIS)

    Masumoto, Yasuaki; Nomura, Mitsuhiro; Okuno, Tsuyoshi; Terai, Yoshikazu; Kuroda, Shinji; Takita, K.

    2003-01-01

    The highest 19th-order longitudinal optical (LO) phonon-mediated relaxation was observed in photoluminescence excitation spectra of CdTe self-assembled quantum dots grown in ZnTe. Hot excitons photoexcited highly in the ZnTe barrier layer are relaxed into the wetting-layer state by emitting multiple LO phonons of the barrier layer successively. Below the wetting-layer state, the LO phonons involved in the relaxation are transformed to those of interfacial Zn x Cd 1-x Te surrounding CdTe quantum dots. The ZnTe-like and CdTe-like LO phonons of Zn x Cd 1-x Te and lastly acoustic phonons are emitted in the relaxation into the CdTe dots. The observed main relaxation is the fast relaxation directly into CdTe quantum dots and is not the relaxation through either the wetting-layer quantum well or the band bottom of the ZnTe barrier layer. This observation shows very efficient optical phonon-mediated relaxation of hot excitons excited highly in the ZnTe conduction band through not only the ZnTe extended state but also localized state in the CdTe quantum dots reflecting strong exciton-LO phonon interaction of telluride compounds

  9. Comparative study for antibacterial potential of in vitro and in vivo grown Ocimum basilicum L. plant extracts

    Energy Technology Data Exchange (ETDEWEB)

    Shafique, M; Khan, S J [Pakistan Councile of Scientific and Industrial Research, Lahore (Pakistan). Dept. of Food and Biotechnology

    2011-09-15

    The antimicrobial activities of in vitro grown callus extract and in vivo grown Ocimum basilicum L. plant leaves extracts were studied and compared. Effect of extraction solvent was also assessed. These extracts were tested in vitro against eight bacterial strains following disc diffusion method. The results indicated that in vitro grown callus extracts of O. basilicum exhibited higher antimicrobial activity against tested Gram positive microorganisms as compared to in vivo grown plant material extract. These findings indicate towards potential use of biotechnology for natural therapeutic agent production. (author)

  10. Crystalline perfection and mechanical investigations on vertical Bridgman grown Bismuth telluride (Bi_2Te_3) single crystals for thermoelectric applications

    International Nuclear Information System (INIS)

    Krishna, Anuj; Vijayan, N.; Singh, Budhendra; Thukral, Kanika; Maurya, K.K.

    2016-01-01

    High efficiency thermoelectric materials plays a vital role in power generation and refrigeration applications. Bismuth telluride (Bi_2Te_3) is one among them. In the present work single crystal of bismuth telluride was grown using vertical Bridgman technique. The phase of grown crystals was analysed using a powder X-ray diffractometer. Quality of the grown crystal was assessed by using high resolution X-ray diffractometer and observed that it is fairly good. Further mechanical investigations on grown crystal was carried out using nano-indentation technique and various mechanical properties like hardness, stiffness and Young’s modulus were evaluated. Observed results clearly indicate its suitability for thermoelectric applications.

  11. Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

    Science.gov (United States)

    Li, Detian; Cheng, Yongjun; Wang, Yongjun; Zhang, Huzhong; Dong, Changkun; Li, Da

    2016-03-01

    Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10-8 Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

  12. Comparative study for antibacterial potential of in vitro and in vivo grown Ocimum basilicum L. plant extracts

    International Nuclear Information System (INIS)

    Shafique, M.; Khan, S.J.

    2011-01-01

    The antimicrobial activities of in vitro grown callus extract and in vivo grown Ocimum basilicum L. plant leaves extracts were studied and compared. Effect of extraction solvent was also assessed. These extracts were tested in vitro against eight bacterial strains following disc diffusion method. The results indicated that in vitro grown callus extracts of O. basilicum exhibited higher antimicrobial activity against tested Gram positive microorganisms as compared to in vivo grown plant material extract. These findings indicate towards potential use of biotechnology for natural therapeutic agent production. (author)

  13. Effect of amaranth dye on the growth and properties of conventional and SR method grown KAP single crystals

    Science.gov (United States)

    Babu Rao, G.; P., Rajesh; Ramasamy, P.

    2018-04-01

    The 0.1 mol% amaranth added KAP single crystals were grown from aqueous solutions by both slow evaporation solution technique and Sankaranarayanan-Ramasamy method. The single crystal having dimension of 45 mm length and 12 mm diameter was grown with growth rate of 1.5 mm/day using SR method. 87 % transmittance is obtained for SR method grown amaranth added KAP single crystal. The high intense luminescence at 661 nm is obtained from amaranth added conventional and SR method grown KAP single crystal. The amaranth added KAP single crystal possesses good mechanical and laser damage threshold stability.

  14. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.

    Science.gov (United States)

    Kuchuk, Andrian V; Kryvyi, Serhii; Lytvyn, Petro M; Li, Shibin; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Safryuk, Nadiia V; Stanchu, Hryhorii V; Belyaev, Alexander E; Salamo, Gregory J

    2016-12-01

    Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

  15. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-01-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  16. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  17. High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

    International Nuclear Information System (INIS)

    Cheng, Jianpeng; Yang, Xuelin; Sang, Ling; Guo, Lei; Hu, Anqi; Xu, Fujun; Tang, Ning; Wang, Xinqiang; Shen, Bo

    2015-01-01

    A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm 2 /(V·s) at sheet charge density of 8.4 × 10 12  cm −2 . Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices

  18. Effects of zinc toxicity on sugar beet (Beta vulgaris L.) plants grown in hydroponics.

    Science.gov (United States)

    Sagardoy, R; Morales, F; López-Millán, A-F; Abadía, A; Abadía, J

    2009-05-01

    The effects of high Zn concentration were investigated in sugar beet (Beta vulgaris L.) plants grown in a controlled environment in hydroponics. High concentrations of Zn sulphate in the nutrient solution (50, 100 and 300 microm) decreased root and shoot fresh and dry mass, and increased root/shoot ratios, when compared to control conditions (1.2 microm Zn). Plants grown with excess Zn had inward-rolled leaf edges and a damaged and brownish root system, with short lateral roots. High Zn decreased N, Mg, K and Mn concentrations in all plant parts, whereas P and Ca concentrations increased, but only in shoots. Leaves of plants treated with 50 and 100 microm Zn developed symptoms of Fe deficiency, including decreases in Fe, chlorophyll and carotenoid concentrations, increases in carotenoid/chlorophyll and chlorophyll a/b ratios and de-epoxidation of violaxanthin cycle pigments. Plants grown with 300 microm Zn had decreased photosystem II efficiency and further growth decreases but did not have leaf Fe deficiency symptoms. Leaf Zn concentrations of plants grown with excess Zn were high but fairly constant (230-260 microg.g(-1) dry weight), whereas total Zn uptake per plant decreased markedly with high Zn supply. These data indicate that sugar beet could be a good model to investigate Zn homeostasis mechanisms in plants, but is not an efficient species for Zn phytoremediation.

  19. Estimating leaf area and leaf biomass of open-grown deciduous urban trees

    Science.gov (United States)

    David J. Nowak

    1996-01-01

    Logarithmic regression equations were developed to predict leaf area and leaf biomass for open-grown deciduous urban trees based on stem diameter and crown parameters. Equations based on crown parameters produced more reliable estimates. The equations can be used to help quantify forest structure and functions, particularly in urbanizing and urban/suburban areas.

  20. Phenotypic Characteristics Of Ten Garlic Cultivars Grown At Different North American Locations

    Science.gov (United States)

    Garlic (Allium sativum L.) bulbs are marketed for their health and culinary values. It is difficult to identify garlic cultivars or classes grown under diverse conditions as a result of their highly elastic environmental responses, particularly relating to skin color and clove arrangement of bulbs....

  1. Perfluoroalkyl acid distribution in various plant compartments of edible crops grown in biosolids-amended soils

    Science.gov (United States)

    Crop uptake of perfluoroalkyl acids (PFAAs) from biosolids-amended soil has been identified as a potential pathway for PFAA entry into the terrestrial food chain. This study compared the uptake of PFAAs in greenhouse-grown radish (Raphanus sativus), celery (Apium graveolens var.d...

  2. Postharvest evaluation of soilless-grown table grape during storage in modified atmosphere.

    Science.gov (United States)

    Cefola, Maria; Pace, Bernardo; Buttaro, Donato; Santamaria, Pietro; Serio, Francesco

    2011-09-01

    Soilless growth systems, developed mainly for vegetables and ornamental crops, have also been used recently as an alternative to soil culture for table grape in order to achieve optimal production performance. In this study, sensory, physical and chemical parameters were analysed in table grapes obtained from soil and soilless growth systems at harvest and during storage in air or modified atmosphere. At harvest, soilless-grown berries were 30% firmer than those grown in soil. Moreover, they showed 60% higher antioxidant activity and total phenol content than soil-grown fruits. Modified atmosphere storage resulted in a better quality of table grapes compared with those stored in air. Furthermore, soilless growth was more suitable than soil growth for preserving visual quality and controlling rachis browning and weight loss. Since the soilless system produces berries that are cleaner and of higher quality than those grown in soil, the implementation of soilless growth for the production of health-promoting and convenience fruits is suggested. Copyright © 2011 Society of Chemical Industry.

  3. Low Temperature CVD Grown Graphene for Highly Selective Gas Sensors Working under Ambient Conditions

    NARCIS (Netherlands)

    Ricciardella, F.; Vollebregt, S.; Polichetti, T.; Alfano, B.; Massera, E.; Sarro, P.M.

    2017-01-01

    In this paper we report on gas sensors based on graphene grown by Chemical Vapor Deposition at 850 °C. Mo was used as catalyst for graphene nucleation. Resistors were directly designed on pre-patterned Mo using the transfer-free process we recently developed, thus avoiding films damage during the

  4. Study of gel grown mixed crystals of Bax Ca ((IO3) 4

    Indian Academy of Sciences (India)

    The growth of mixed crystals of BaCa1–(IO3)4 were carried out with simple gel method. The effect of various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of reactants on the growth was studied. Crystals having different morphologies and habits were obtained. The grown ...

  5. Simulating phosphorus removal from a vertical-flow constructed wetland grown with C alternifolius species

    Science.gov (United States)

    Ying Ouyang; Lihua Cui; Gary Feng; John Read

    2015-01-01

    Vertical flow constructed wetland (VFCW) is a promising technique for removal of excess nutrients and certain pollutants from wastewaters. The aim of this study was to develop a STELLA (structural thinking, experiential learning laboratory with animation) model for estimating phosphorus (P) removal in an artificial VFCW (i.e., a substrate column with six zones) grown...

  6. Silicon alleviates Cd stress of wheat seedlings (Triticum turgidum L. cv. Claudio) grown in hydroponics

    DEFF Research Database (Denmark)

    Rizwan, M.; Meunier, J. D.; Davidian, J. C.

    2016-01-01

    We investigated the potential role of silicon in improving tolerance and decreasing cadmium (Cd) toxicity in durum wheat (Triticum turgidum L. durum) either through a reduced Cd uptake or exclusion/sequestration in non-metabolic tissues. For this, plants were grown in hydroponic conditions for 10...

  7. GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz Vazquez, F E; Mishurnyi, V A; Gorbatchev, A Yu; De Anda, F [Universidad Autonoma de San Luis Potosi, Instituto de Investigation en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico); Elyukhin, V A, E-mail: fcoe_ov@prodigy.net.m, E-mail: andre@cactus.iico.uaslp.m [CINVESTAV-IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico D.F., CP 07360 (Mexico)

    2009-05-01

    The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown Ga{sub x}In{sub 1-z}As QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the Ga{sub x}In{sub -x} As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

  8. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  9. Root uptake and translocation of perfluorinated alkyl acids by three hydroponically grown crops

    NARCIS (Netherlands)

    Felizeter, S.; McLachlan, M.S.; de Voogt, P.

    2014-01-01

    Tomato, cabbage, and zucchini plants were grown hydroponically in a greenhouse. They were exposed to 14 perfluorinated alkyl acids (PFAAs) at four different concentrations via the nutrient solution. At maturity the plants were harvested, and the roots, stems, leaves, twigs (where applicable), and

  10. Crop growth rate differs in warm season C4-grasses grown in pure ...

    African Journals Online (AJOL)

    German Strain R) grown in pure and mixed stands under low and high water levels was investigated at one month interval namely: 30, 60 and 90 days after emergence (DAE), in pot experiment at Dryland Agriculture Institute, West Texas A&M University, Canyon, Texas, USA during spring 2010. The corn CGR in the mixed ...

  11. RAPD-PCR analysis of some species of Euphorbia grown in ...

    African Journals Online (AJOL)

    family ^____^

    2013-12-04

    Dec 4, 2013 ... This study attempts to identify species of Euphorbia (Euphorbia peplus, Euphorbia helioscopia,. Euphorbia granulata and Euphorbia hirta) grown in University of Baghdad Campus in Jadiriyah and determine the genetic polymorphism among them by using DNA markers generated by polymerase.

  12. ZnO based nanowires grown by chemical vapour deposition for selective hydrogenation of acetylene alcohols

    NARCIS (Netherlands)

    Protasova, L.N.; Rebrov, E.; Choy, K.L.; Pung, S.Y.; Engels, V.; Cabaj, M.; Wheatley, A.E.H.; Schouten, J.C.

    2011-01-01

    Vertically aligned ZnO nanowires (NWs) with a length of 1.5–10 µm and a mean diameter of ca. 150 nm were grown by chemical vapour deposition onto a c-oriented ZnO seed layer which was deposited by atomic layer deposition on Si substrates. The substrates were then spin-coated with an ethanol solution

  13. Performance of cowpea grown as an intercrop with maize of different ...

    African Journals Online (AJOL)

    The negative effects of shade were more pronounced in the semi-determinate cowpea than in the indeterminate. Therefore, in high maize populations, indeterminate spreading cowpeas should be grown; while semi-determinate cowpeas should be planted in low to moderate maize populations because of their intolerance ...

  14. The wood quality of Pinus chiapensis (Mart.) Andresen grown in the ...

    African Journals Online (AJOL)

    The wood quality of Pinus chiapensis (Mart.) Andresen grown in the Mpumalanga forest region: scientific paper. ... When present, the amounts of included resin, pieces of bark and other debris at the occluded pruning cuts, were small and of little practical significance. The wood machined without any difficulty in the wet and ...

  15. Thermal stability of amorphous carbon films grown by pulsed laser deposition

    Science.gov (United States)

    Friedmann, T. A.; McCarty, K. F.; Barbour, J. C.; Siegal, M. P.; Dibble, Dean C.

    1996-03-01

    The thermal stability in vacuum of amorphous tetrahedrally coordinated carbon (a-tC) films grown on Si has been assessed by in situ Raman spectroscopy. Films were grown in vacuum on room-temperature substrates using laser fluences of 12, 22, and 45 J/cm2 and in a background gas of either hydrogen or nitrogen using a laser fluence of 45 J/cm2. The films grown in vacuum at high fluence (≳20J/cm2) show little change in the a-tC Raman spectra with temperature up to 800 °C. Above this temperature the films convert to glassy carbon (nanocrystalline graphite). Samples grown in vacuum at lower fluence or in a background gas (H2 or N2) at high fluence are not nearly as stable. For all samples, the Raman signal from the Si substrate (observed through the a-tC film) decreases in intensity with annealing temperature indicating that the transparency of the a-tC films is decreasing with temperature. These changes in transparency begin at much lower temperatures (˜200 °C) than the changes in the a-tC Raman band shape and indicate that subtle changes are occurring in the a-tC films at lower temperatures.

  16. Comparison of antimicrobial resistant genes in chicken gut microbiome grown on organic and conventional diet

    Directory of Open Access Journals (Sweden)

    Narasimha V. Hegde

    2016-12-01

    Full Text Available Antibiotics are widely used in chicken production for therapeutic purposes, disease prevention and growth promotion, and this may select for drug resistant microorganisms known to spread to humans through consumption of contaminated food. Raising chickens on an organic feed regimen, without the use of antibiotics, is increasingly popular with the consumers. In order to determine the effects of diet regimen on antibiotic resistant genes in the gut microbiome, we analyzed the phylotypes and identified the antimicrobial resistant genes in chicken, grown under conventional and organic dietary regimens. Phylotypes were analyzed from DNA extracted from fecal samples from chickens grown under these dietary conditions. While gut microbiota of chicken raised in both conventional and organic diet exhibited the presence of DNA from members of Proteobacteria and Bacteroidetes, organic diet favored the growth of members of Fusobacteria. Antimicrobial resistance genes were identified from metagenomic libraries following cloning and sequencing of DNA fragments from fecal samples and selecting for the resistant clones (n=340 on media containing different concentrations of eight antibiotics. The antimicrobial resistant genes exhibited diversity in their host distribution among the microbial population and expressed more in samples from chicken grown on a conventional diet at higher concentrations of certain antimicrobials than samples from chicken grown on organic diet. Further studies will elucidate if this phenomena is widespread and whether the antimicrobial resistance is indeed modulated by diet. This may potentially assist in defining strategies for intervention to reduce the prevalence and dissemination of antibiotic resistance genes in the production environment.

  17. Silicon accumulation and distribution in petunia and sunflower grown in a rice hull-amended substrate

    Science.gov (United States)

    Silicon (Si) is a plant beneficial element associated with mitigation of abiotic and biotic stresses. Most greenhouse-grown ornamentals are considered low Si accumulators based on foliar Si concentration. However, Si accumulates in all tissues, and there is little published data on the distributio...

  18. Origin of Spontaneous Core-Shell AIGaAs Nanowires Grown by Molecular Beam Epitaxy

    DEFF Research Database (Denmark)

    Dubrovskii, V. G.; Shtrom, I. V.; Reznik, R. R.

    2016-01-01

    Based on the high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy studies, we unravel the origin of spontaneous core shell AlGaAs nanowires grown by gold-assisted molecular beam epitaxy. Our AlGaAs nanowires have a cylindrical core...

  19. Molecular Beam Epitaxy-Grown InGaN Nanowires and Nanomushrooms for Solid State Lighting

    KAUST Repository

    Gasim, Anwar A.

    2012-01-01

    InGaN is a promising semiconductor for solid state lighting thanks to its bandgap which spans the entire visible regime of the electromagnetic spectrum. InGaN is grown heteroepitaxially due to the absence of a native substrate; however, this results

  20. Low temperature synthesis and field emission characteristics of single to few layered graphene grown using PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Khan, Sunny; Zulfequar, M.; Harsh; Husain, Mushahid, E-mail: mush_reslab@rediffmail.com

    2017-04-30

    Highlights: • Graphene was synthesized by PECVD system at a low temperature of 600 °C. • From different characterization techniques, the presence of single and few layered graphene was confirmed. • X-ray diffraction pattern of the graphene showed single crystalline nature of the film. • The as-grown graphene films were observed extremely good field emitters with long term emission current stability. - Abstract: In this work, high-quality graphene has successfully been synthesized on copper (Cu) coated Silicon (Si) substrate at very large-area by plasma enhanced chemical vapor deposition system. This method is low cost and highly effective for synthesizing graphene relatively at low temperature of 600 °C. Electron microscopy images have shown that surface morphology of the grown samples is quite uniform consisting of single layered graphene (SLG) to few layered graphene (FLG). Raman spectra reveal that graphene has been grown with high-quality having negligible defects and the observation of G and G' peaks is also an indicative of stokes phonon energy shift caused due to laser excitation. Scanning probe microscopy image also depicts the synthesis of single to few layered graphene. The field emission characteristics of as-grown graphene samples were studied in a planar diode configuration at room temperature. The graphene samples were observed to be a good field emitter having low turn-on field, higher field amplification factor and long term emission current stability.

  1. 77 FR 21841 - Pistachios Grown in California, Arizona, and New Mexico; Decreased Assessment Rate

    Science.gov (United States)

    2012-04-12

    ... FIR] Pistachios Grown in California, Arizona, and New Mexico; Decreased Assessment Rate AGENCY... the assessment rate established for the Administrative Committee for Pistachios (Committee) for the 2011-12 and subsequent production years from $0.0007 to $0.0005 per pound of assessed weight pistachios...

  2. 76 FR 60361 - Pistachios Grown in California, Arizona, and New Mexico; Decreased Assessment Rate

    Science.gov (United States)

    2011-09-29

    ...; FV-983-2 IR] Pistachios Grown in California, Arizona, and New Mexico; Decreased Assessment Rate...: This rule decreases the assessment rate established for the Administrative Committee for Pistachios... weight pistachios. The Committee locally administers the marketing order which regulates the handling of...

  3. 75 FR 68681 - Pistachios Grown in California, Arizona, and New Mexico; Modification of the Aflatoxin Regulations

    Science.gov (United States)

    2010-11-09

    ... FIR] Pistachios Grown in California, Arizona, and New Mexico; Modification of the Aflatoxin..., Arizona, and New Mexico pistachio marketing order (order). The interim rule streamlined the aflatoxin sampling and testing procedures under the order's rules and regulations for pistachios to be shipped for...

  4. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    International Nuclear Information System (INIS)

    Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

    1994-01-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

  5. Growth and study of some gel grown group II single crystals of iodate

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Single crystals of calcium iodate and barium iodate were grown by simple gel technique by single diffusion method. The optimum conditions were established by varying various parameters such as pH of gel solution, gel concentration, gel setting time, concentration of the reactants etc. Crystals having different.

  6. Characterization of GaN/AlGaN epitaxial layers grown by ...

    Indian Academy of Sciences (India)

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical ... reported by introducing annealing of the GaN layer in nitrogen [5], Fe doping [6], .... [2] Y F Wu, S M Wood, R P Smith, S Sheppard, S T Allen, P Parikh and J Milligan,.

  7. The effects of Fe-chelate type and PH on substrate grown roses

    NARCIS (Netherlands)

    Voogt, W.; Sonneveld, C.

    2009-01-01

    Substrate grown roses appear to be susceptible to chlorosis, which indicates problems with Fe or Mn uptake and hence yield reduction. In common practice this problem is often treated by the addition of extra Fe-chelate, or the use of Fe-EDDHA instead of Fe-DTPA. In previous tests, it was shown that

  8. Ag-catalyzed InAs nanowires grown on transferable graphite flakes

    DEFF Research Database (Denmark)

    Meyer-Holdt, Jakob; Kanne, Thomas; Sestoft, Joachim E.

    2016-01-01

    on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro...

  9. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides

    Science.gov (United States)

    Chen, Ke; Roy, Anupam; Rai, Amritesh; Movva, Hema C. P.; Meng, Xianghai; He, Feng; Banerjee, Sanjay K.; Wang, Yaguo

    2018-05-01

    Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.

  10. EXAFS investigations on PbMoO4 single crystals grown under ...

    Indian Academy of Sciences (India)

    Abstract. Extended X-ray absorption fine structure (EXAFS) measurements on PbMoO4 (LMO) crystals have been performed at the recently-commissioned dispersive EXAFS beamline (BL-8) of INDUS-2 Synchrotron facility at Indore, India. The LMO samples were prepared under three different conditions viz. (i) grown from ...

  11. 77 FR 72683 - Sweet Cherries Grown in Designated Counties in Washington; Decreased Assessment Rate

    Science.gov (United States)

    2012-12-06

    ...; FV12-923-1 IR] Sweet Cherries Grown in Designated Counties in Washington; Decreased Assessment Rate... (Committee) for the 2012-2013 and subsequent fiscal periods from $0.40 to $0.18 per ton of sweet cherries handled. The Committee locally administers the marketing order which regulates the handling of sweet...

  12. 75 FR 31663 - Sweet Cherries Grown in Designated Counties in Washington; Change in the Handling Regulation

    Science.gov (United States)

    2010-06-04

    ... producer returns by providing pack differentiation; and benefit producers, handlers, and consumers. DATES... producer returns by providing pack differentiation, and is expected to benefit producers, handlers, and..., and container regulations for any variety or varieties of cherries grown in the production area...

  13. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  14. Interactions between nitrate and chloride in nutrient solutions for substrate grown tomato

    NARCIS (Netherlands)

    Voogt, W.; Sonneveld, C.

    2004-01-01

    In two successive experiments tomato was grown at different Cl and NO3 concentrations in the root environment with rockwool as a sub-strate. The EC value in the nutrient solution was fairly constant, varying between 3.5 and 4.0 dS m-1 in all treatments. The NO3 concentrations in the treatments

  15. 76 FR 65360 - Irish Potatoes Grown in Southeastern States; Suspension of Marketing Order Provisions

    Science.gov (United States)

    2011-10-21

    ... operate without marketing order requirements in order to review the effectiveness of the order. During the... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 953 [Doc. No. AMS-FV-11-0027; FV11-953-1 FR] Irish Potatoes Grown in Southeastern States; Suspension of Marketing Order Provisions...

  16. Compost Grown Agaricus bisporus Lacks the Ability to Degrade and Consume Highly Substituted Xylan Fragments

    NARCIS (Netherlands)

    Jurak, Edita; Patyshakuliyeva, Aleksandrina; de Vries, Ronald P; Gruppen, Harry; Kabel, Mirjam A

    2015-01-01

    The fungus Agaricus bisporus is commercially grown for the production of edible mushrooms. This cultivation occurs on compost, but not all of this substrate is consumed by the fungus. To determine why certain fractions remain unused, carbohydrate degrading enzymes, water-extracted from

  17. 76 FR 4201 - Kiwifruit Grown in California; Order Amending Marketing Order No. 920; Correction

    Science.gov (United States)

    2011-01-25

    ... Avenue, SW., Stop 0237, Washington, DC 20250-0237; Telephone: (202) 720-2491, Fax: (202) 720-8938, E-mail... DEPARTMENT OF AGRICULTURE Agricultural Marketing Service 7 CFR Part 920 [Doc. No. AO-FV-08-0174; AMS-FV-08-0085; FV08-920-3 C] Kiwifruit Grown in California; Order Amending Marketing Order No. 920...

  18. A study of 1/f noise in InP grown by CBE

    NARCIS (Netherlands)

    Chen, X.Y.; Leijs, M.R.

    1996-01-01

    The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

  19. 76 FR 18001 - Irish Potatoes Grown in Washington; Decreased Assessment Rate

    Science.gov (United States)

    2011-04-01

    ... IR] Irish Potatoes Grown in Washington; Decreased Assessment Rate AGENCY: Agricultural Marketing... rate established for the State of Washington Potato Committee (Committee) for the 2011-2012 and subsequent fiscal periods from $0.0035 to $0.003 per hundredweight of potatoes handled. The Committee locally...

  20. 78 FR 48285 - Irish Potatoes Grown in Washington; Decreased Assessment Rate

    Science.gov (United States)

    2013-08-08

    ...; FV13-946-1 FIR] Irish Potatoes Grown in Washington; Decreased Assessment Rate AGENCY: Agricultural... established for the State of Washington Potato Committee (Committee) for the 2013-2014 fiscal year and all subsequent fiscal periods from $0.003 to $0.0025 per hundredweight of potatoes handled. The Committee locally...