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Sample records for zno-layers metallorganische gasphasenepitaxie

  1. Metal-organic-vapor-phase-epitaxy and characterization of homoepitaxial ZnO-layers; Metallorganische Gasphasenepitaxie und Charakteriesierung homoepitaktischer ZnO-Schichten

    Energy Technology Data Exchange (ETDEWEB)

    Heinze, Soeren

    2009-03-30

    layers was at the beginning very bad, but could by directed change of the growth parameters be more and more improved. By application of pure O{sub 2} as oxygen source (instead of N{sub 2}O) word-widely for the first time the homoepitactical deposition of ZnO layers in a two-dimensional growth mode succeeded. On the base of such layers attempts on the p-doping were performed with arsenic as dopant. Instead of p-type ZnO indeed an electrically insulating Zn/As/O alloy was formed. This alloy was identified as Zn{sub 3}(AlO{sub 3}){sub 2} -reinerite -. (orig.) [German] ZnO ist ein direkter Halbleiter mit einer Bandluecke von 3,37 eV und einer Exzitonenbindungsenergie von ca. 60 meV. Durch Legierung mit Cadmium oder Magnesium laesst sich die Bandluecke zwischen 2,9 eV und 4 eV variieren, was die Realisierung von z. B. Quantentopfstrukturen ermoeglicht. Deswegen ist ZnO ein aussichtsreiches Material fuer optoelektronische Anwendungen im blauen und nahen ultravioletten Spektralbereich. Trotz weltweit zahlreicher Forschungsaktivitaeten ueber die letzten Jahre konnte allerdings die Realisierung von p-Typ ZnO nicht zufriedenstellend (d. h. reproduzierbar und langzeitstabil) geloest werden. Die ZnO-Schichten dieser Arbeit wurden mittels metallorganischer Gasphasenepitaxie hergestellt. Anhand der Untersuchungen an heteroepitaktisch abgeschiedenen, undotierten Schichten, zeige ich die Grenzen der Heteroepitaxie auf. Durch die Einfuehrung eines dreistufigen Wachstumsverfahrens konnten physikalischen Eigenschaften (Morphologie, Lumineszenz, kristallografische und elektrische Eigenschaften) der obersten ZnO-Schicht deutlich verbessert werden. Dennoch konnte in Dotierversuchen kein p-Typ ZnO hergestellt werden. Hingegen wurde nachgewiesen, dass sich waehrend des Herstellungsprozesses eine elektrisch hochleitfaehige Zwischenschicht in der Naehe der Substrat/ZnO-Grenzflaeche bildet, deren Ausbildung sich bei der Heteroepitaxie nicht vermeiden laesst. Seit ca. drei Jahren sind Zn

  2. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully processed and operating device on Si(001). Moreover, the developed approach for the MOVPE growth of GaN on Si(001) is successfully adapted to large area 150 mm Si(001) substrates, proving the possible scalability to industrial circuits. (orig.)

  3. High quality ZnO layers with adjustable refractive indices for integrated optics applications

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Gardeniers, Johannes G.E.

    1995-01-01

    Thin (approx. 1 μm) crystalline ZnO films with a good optical quality and a good (0002) texture are grown under two considerably different process parameter sets using a r.f. planar magnetron sputtering unit. The optical parameters of the two corresponding ZnO layers are distinctly different: high

  4. Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; El-Shaer, A.; Schlenker, E.; Bakin, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Reuss, F.; Kling, R.; Schoch, W.; Limmer, W. [University Ulm, Department of Semiconductor Physics, Ulm (Germany); Ahlers, H.; Siegner, U.; Sievers, S.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Eisenmenger, J.; Mueller, T.; Ziemann, P. [University Ulm, Department of Solid State Physics, Ulm (Germany); Huebel, A.; Denninger, G. [Universitaet Stuttgart, 2. Physkalisches Institut, Stuttgart (Germany)

    2007-07-15

    Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al{sub 2}O{sub 3} substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. (orig.)

  5. On quantum efficiency of photoluminescence in ZnO layers and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

    2009-12-15

    In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

  6. Oxygen reduction at electrodeposited ZnO layers in alkaline solution

    International Nuclear Information System (INIS)

    Prestat, M.; Vucko, F.; Lescop, B.; Rioual, S.; Peltier, F.; Thierry, D.

    2016-01-01

    Zinc oxide (ZnO) layers were electrodeposited from an aqueous nitrate bath at 62 °C on copper substrates. At −0.9 V (vs. saturated calomel reference electrode), the growth rate is 600 nm min −1 . In the early stages of the deposition, the layers are porous. At longer deposition times, the surface becomes dense and rough. The wurtzite crystalline structure is confirmed by XRD measurements and the chemical composition of the ZnO surface was assessed by EDX and XPS. The oxygen reduction reaction (ORR) was investigated at room temperature in a 10 −3 M KOH solution with KCl as supporting electrolyte. The ORR onset potential is found to be much larger than that of platinum taken as reference electrocatalyst. Rotating ring-disk electrode experiments evidence a negligible production of hydrogen peroxide as intermediate product of the reaction. The latter follows thus a direct four-electron pathway at pH ∼11.

  7. Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

    International Nuclear Information System (INIS)

    Herrero, J.; Guillen, C.

    2004-01-01

    The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

  8. Luminescence properties of ZnO layers grown on Si-on-insulator substrates

    International Nuclear Information System (INIS)

    Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S.

    2006-01-01

    The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E 2 high optical phonon mode near 438 cm -1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems

  9. Investigation of thin ZnO layers in view of laser desorption-ionization

    Energy Technology Data Exchange (ETDEWEB)

    Grechnikov, A A; Borodkov, A S [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, 19 Kosygin Str., 119991 Moscow (Russian Federation); Georgieva, V B [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Alimpiev, S S; Nikiforov, S M; Simanovsky, Ya O [General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow (Russian Federation); Dimova-Malinovska, D; Angelov, O I, E-mail: lazarova@issp.bas.b [Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria)

    2010-04-01

    Thin zinc oxide films (ZnO) were developed as a matrix-free platform for surface assisted laser desorption-ionization (SALDI) time-of-flight mass spectrometry. The ZnO films were deposited by RF magnetron sputtering of ZnO ceramic targets in Ar atmospheres on monocrystalline silicon. The generation under UV (355 nm) laser irradiation of positive ions of atenolol, reserpine and gramicidin S from the ZnO layers deposited was studied. All analytes tested were detected as protonated molecules with no or very structure-specific fragmentation. The mass spectra obtained showed low levels of chemical background noise. All ZnO films studied exhibited high stability and good reproducibility. The detection limits for test analytes are in the 10 femtomol range.

  10. Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Vinnichenko, M.; Muecklich, A.; Kolitsch, A.; Krause, M.; Munoz, E.; Gago, R.

    2011-01-01

    The effect of the substrate temperature on the sublattice ordering in ZnO layers grown by reactive pulsed magnetron sputtering on sapphire has been investigated by different techniques. The improvement of the crystal quality and heteroepitaxial growth at relatively low temperatures (550 deg. C) is verified by x-ray diffraction, high-resolution transmission electron microscopy, Rutherford backscattering spectrometry in channeling mode (RBS/C), and Raman spectroscopy. Sublattice-resolved analysis by resonant RBS/C and Raman spectroscopy reveals that the progressive transition to the single crystal phase is accomplished in a faster way for Zn- than for O-sublattice. This behavior is attributed to the preferential annealing of defects in the Zn sublattice at low temperatures when compared to those of the O sublattice.

  11. Sims Characterisation of ZnO Layer Prepared By Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Andrej Vincze

    2005-01-01

    Full Text Available New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific properties for near UV emission and absorption optical devices. The pulsed laser deposition (PLD is one of the methods to prepare this type of material. The aim of this paper is to compare properties of ZnO layers deposited from pure Zn target in oxygen atmosphere and the analysis of their surface properties by secondary ion mass spectroscopy (SIMS, atomic force microscopy (AFM and scanning electron microscopy (SEM.

  12. Determination of chemical state of Al doping element in ZnO layer

    International Nuclear Information System (INIS)

    Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

    2011-01-01

    Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth profiling of these layered structures. After determination of the depth of the embedded AlO layer with the precision of 1 nm, we sputtered the upper ZnO atomic layers until the AlO layer was revealed and determined the chemical state of Al in the thin AlO layer by the XPS instrument. During the whole experiment the samples were in high vacuum so as to exclude the contamination of the surface. Acknowledgements. This work was supported by the National Office for Research and Technology (Grant nos. OTKA 73424 and TFSOLAR2).

  13. Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

    2012-01-01

    ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

  14. Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy

    Science.gov (United States)

    Zubiaga, A.; Tuomisto, F.; Zúñiga-Pérez, J.; Muñoz-San José, V.

    2008-11-01

    We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 1017 cm-3 to low 1017 cm-3) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×1017 cm-3 in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.

  15. Influence of the processing conditions on the structural properties of ZnO layers obtained by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Institute of Optical Materials and Technology ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl.109, 1113 Sofia (Bulgaria)

    2010-11-01

    The plasma enhanced chemical vapor deposition (PECVD) is a powerful and flexible instrument for depositing thin layers, nanocomposites or nanostructures. In this work ZnO layers have been grown by metal-organic PECVD (RF - 13.56 MHz) on Si wafers. Zn acetylacetonate has been used as a precursor and oxygen as oxidant. The influence of the oxygen content in gas mixture, the total pressure, substrate temperature and ZnO seed layer on the structural properties of the layers deposited on Si wafers has been studied. ZnO layer properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD data have shown that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along c-axis direction perpendicular to the substrate surfaces. The results obtained indicate that by controlling the oxygen content in gas mixture, the total pressure and substrate temperature during the film growth one can control the formation of c-axis phase and the crystallite grain size. Nanorods with good alignment, vertically orientated to the substrate surface can be observed in the layers deposited at low content of O{sub 2} in plasma at substrate temperature of 400 {sup o}C. Due to their structural characteristics these layers are potential materials for preparing chemical- and biosensors where inherently large surface to volume ratio of structured materials are important prerequisite for enhanced sensitivity.

  16. Improvement of inverted organic solar cells using acetic acid as an additive for ZnO layer processing

    Directory of Open Access Journals (Sweden)

    Yang Li

    2018-02-01

    Full Text Available In this work, we used acetic acid as an additive for the preparation of ZnO layers and improved the performance of poly{4,8-bis[(2-ethylhexyl-oxy]benzo[1,2-b:4,5-b’] dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexylcarbonyl]thieno[3,4-b]thiophene- 4,6-diyl} (PTB7-based inverted organic solar cells. The addition of acetic acid to the ZnO precursor solution improved the transparency and conductivity of the sol-gel-synthesized ZnO film, by increasing the grain size of the film. Accordingly, the power conversion efficiency (PCE of the organic solar cells was improved from 6.42% to 7.55%, which was mainly caused by the enhanced current density and fill factor. The best sample demonstrated a high PCE of 7.85% with negligible hysteresis and good stability. Our results indicate that using acetic acid as an additive for the preparation of ZnO is a simple and effective way of fabricating high-performance inverted organic solar cells.

  17. Improvement of inverted organic solar cells using acetic acid as an additive for ZnO layer processing

    Science.gov (United States)

    Li, Yang; Liu, Yawen; Liu, Zhihai; Xie, Xiaoyin; Lee, Eun-Cheol

    2018-02-01

    In this work, we used acetic acid as an additive for the preparation of ZnO layers and improved the performance of poly{4,8-bis[(2-ethylhexyl)-oxy]benzo[1,2-b:4,5-b'] dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene- 4,6-diyl} (PTB7)-based inverted organic solar cells. The addition of acetic acid to the ZnO precursor solution improved the transparency and conductivity of the sol-gel-synthesized ZnO film, by increasing the grain size of the film. Accordingly, the power conversion efficiency (PCE) of the organic solar cells was improved from 6.42% to 7.55%, which was mainly caused by the enhanced current density and fill factor. The best sample demonstrated a high PCE of 7.85% with negligible hysteresis and good stability. Our results indicate that using acetic acid as an additive for the preparation of ZnO is a simple and effective way of fabricating high-performance inverted organic solar cells.

  18. Efficient Color-Stable Inverted White Organic Light-Emitting Diodes with Outcoupling-Enhanced ZnO Layer.

    Science.gov (United States)

    Zhao, Xin-Dong; Li, Yan-Qing; Xiang, Heng-Yang; Zhang, Yi-Bo; Chen, Jing-De; Xu, Lu-Hai; Tang, Jian-Xin

    2017-01-25

    Inverted organic light-emitting diode (OLED) has attracted extensive attention due to the demand in active-matrix OLED display panels as its geometry enables the direct connection with n-channel transistor backplane on the substrate. One key challenge of high-performance inverted OLED is an efficient electron-injection layer with superior electrical and optical properties to match the indium tin oxide cathode on substrate. We here propose a synergistic electron-injection architecture using surface modification of ZnO layer to simultaneously promote electron injection into organic emitter and enhance out-coupling of waveguided light. An efficient inverted white OLED is realized by introducing the nanoimprinted aperiodic nanostructure of ZnO for broadband and angle-independent light out-coupling and inserting an n-type doped interlayer for energy level tuning and injection barrier lowering. As a result, the optimized inverted white OLEDs have an external quantum efficiency of 42.4% and a power efficiency of 85.4 lm W 1- , which are accompanied by the superiority of angular color stability over the visible wavelength range. Our results may inspire a promising approach to fabricate high-efficiency inverted OLEDs for large-scale display panels.

  19. Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

    2010-04-01

    In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

  20. Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

    KAUST Repository

    Lee, Da Hoon; Kang, Sun Kil; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Kumaresan, Yogeenth; Lee, Sungeun; Lee, Chaedeok; Ham, Moon-Ho; Jung, Gun Young

    2017-01-01

    The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

  1. Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

    KAUST Repository

    Lee, Da Hoon

    2017-08-05

    The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

  2. Enhanced resolution imaging of ultrathin ZnO layers on Ag(111) by multiple hydrogen molecules in a scanning tunneling microscope junction

    Science.gov (United States)

    Liu, Shuyi; Shiotari, Akitoshi; Baugh, Delroy; Wolf, Martin; Kumagai, Takashi

    2018-05-01

    Molecular hydrogen in a scanning tunneling microscope (STM) junction has been found to enhance the lateral spatial resolution of the STM imaging, referred to as scanning tunneling hydrogen microscopy (STHM). Here we report atomic resolution imaging of 2- and 3-monolayer (ML) thick ZnO layers epitaxially grown on Ag(111) using STHM. The enhanced resolution can be obtained at a relatively large tip to surface distance and resolves a more defective structure exhibiting dislocation defects for 3-ML-thick ZnO than for 2 ML. In order to elucidate the enhanced imaging mechanism, the electric and mechanical properties of the hydrogen molecular junction (HMJ) are investigated by a combination of STM and atomic force microscopy. It is found that the HMJ shows multiple kinklike features in the tip to surface distance dependence of the conductance and frequency shift curves, which are absent in a hydrogen-free junction. Based on a simple modeling, we propose that the junction contains several hydrogen molecules and sequential squeezing of the molecules out of the junction results in the kinklike features in the conductance and frequency shift curves. The model also qualitatively reproduces the enhanced resolution image of the ZnO films.

  3. ZnO layers prepared by spray pyrolysis

    Science.gov (United States)

    Messaoudi, C.; Abd-Lefdil, S.; Sayah, D.; Cadene, M.

    1998-02-01

    Highly transparent undoped and indium doped ZnO thin films have been grown on glass substrates by using the spray pyrolysis process. Conditions of preparation have been optimized to get good quality and reproducible films with required properties. Polycrystalline films with an hexagonal Wurtzite-type structure were easily obtained under the optimum spraying conditions. Both of samples have shown high transmission coefficient in the visible and infrared wavelength range with sharp absorption edge around 380 nm which closely corresponds to the intrinsic band-gap of ZnO (3.2 eV). Orientation and crystallites size were remarkably modified by deposition temperature and indium doping. Des couches minces de ZnO, hautement transparentes, non dopées et dopées à l'indium ont été élaborées sur un substrat en verre par le procédé de pulvérisation chimique réactive spray. Les conditions de préparation ont été optimisées pour l'obtention de couches reproductibles, de bonne qualité et ayant les propriétés requises. Des films polycristallins, présentant une structure hexagonale de type Wurtzite, ont été aisément obtenus dans les conditions optimales de pulvérisation. Tous les échantillons ont présenté un coefficient de transmission élevé dans le domaine du visible et du proche infrarouge, avec une absorption brutale au voisinage de 380 nm, correspondant au gap optique du ZnO (3,2 eV). L'orientation et la taille des cristallites ont été remarquablement modifiées par la température du dépôt et par le dopage à l'indium.

  4. Formation of transparent ZnO layers by MePIIID

    International Nuclear Information System (INIS)

    Maendl, S.; Rauschenbach, B.

    2006-01-01

    ZnO thin films were deposited using metal plasma immersion ion implantation and deposition (MePIIID) with high voltage pulses from 0 to 10 kV at a duty cycle of 9%. All films exhibit a (0 0 2) fibre texture of the hexagonal ZnO phase. With increasing bias voltage, an increased sub-band gap absorption was observed with spectroscopic ellipsometry, together with preferential sputtering of oxygen from the film. Only a partial reversal of this effect was obtained with an increased oxygen/zinc ratio on the supply side showing that additional radiation induced defects are present in the film at high pulse voltages

  5. Shape Selective Photoinduced Electrochemical Behaviour of Thin ZnO Layers Prepared by Surfatron.

    Czech Academy of Sciences Publication Activity Database

    Dytrych, Pavel; Klusoň, Petr; Šolcová, Olga; Kment, Štěpán; Straňák, Vítězslav; Čada, Martin; Hubička, Zdeněk

    2015-01-01

    Roč. 597, DEC 31 (2015), s. 131-139 ISSN 0040-6090 R&D Projects: GA ČR GA15-14228S; GA TA ČR TA03010548 Institutional support: RVO:67985858 ; RVO:68378271 Keywords : zinc oxide * surfatron * plasma-enhaced chemical vapor deposition * electrochemistry Subject RIV: CI - Industrial Chemistry, Chemical Engineering; BL - Plasma and Gas Discharge Physics (FZU-D) Impact factor: 1.761, year: 2015

  6. Growth of ZnO layers for transparent and flexible electronics

    International Nuclear Information System (INIS)

    Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A.

    2008-01-01

    We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility μ of up to 10.78 cm 2 V -1 s -1 . Furthermore, we show how these layers can be processed with conventional device processing techniques

  7. Growth of ZnO layers for transparent and flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Postels, B.; Suleiman, M.; Elshaer, A.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig (Germany)

    2008-02-15

    We have deposited and characterised ZnO on flexible and transparent plastic polymer. We employed a specially designed vapour phase growth system with elemental sources for zinc and oxygen and deposited thin ZnO films at temperatures below 400 deg. C. Basic photoluminescence characterisation confirms ZnO. Ohmic contacts were fabricated on these layers and the layers exhibit significantly high electron concentration with carrier mobility {mu} of up to 10.78 cm{sup 2} V{sup -1} s{sup -1}. Furthermore, we show how these layers can be processed with conventional device processing techniques.

  8. In-situ ellipsometric characterization of the growth of porous anisotropic nanocrystalline ZnO layers

    Energy Technology Data Exchange (ETDEWEB)

    Laha, P., E-mail: plaha@vub.ac.be; Terryn, H.; Ustarroz, J., E-mail: justarro@vub.ac.be [Research Group Electrochemical and Surface Engineering (SURF), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Elsene, Brussels (Belgium); Nazarkin, M. Y., E-mail: mikleo@mail.ru; Gavrilov, S. A. [Department of Materials of Functional Electronics (MFE), National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow 124498 (Russian Federation); Volkova, A. V.; Simunin, M. M. [Department of Quantum Physics and Nanoelectronics (QPN), National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow 124498 (Russian Federation)

    2015-03-09

    ZnO films have increasingly been in the spotlight due to their largely varied electro-physical and optical properties. For several applications, porous anisotropic nanocrystalline layers are especially interesting. To study the growth kinetics of such films during different fabrication processes, a powerful non-destructive in-situ technique is required. In this work, both ex-situ and in-situ spectroscopic ellipsometry are used along with advanced modelling techniques that are able to take both the anisotropy and the porosity of the films into account. Scanning electron microscopy, along with nitrogen absorption methods for measuring porosity, validated the ellipsometric data and proposed model. The film, grown by chemical bath deposition, was monitored from around 700 to 1800 nm in thickness. This same principle can now be used to monitor any other porous and/or anisotropic structure in an effective in-situ manner, e.g., growth of porous anodic aluminium oxides, nano-porous silica films, etc.

  9. Electrical and Photo-Induced Degradation of ZnO Layers in Organic Photovoltaics

    DEFF Research Database (Denmark)

    Manor, Assaf; Katz, Eugene A.; Tromholt, Thomas

    2011-01-01

    minutes) does not affect the short-circuit current of the device. However, a significant degradation of V-OC and FF has been recorded by measurements of the cell current-voltage curves with a variation of light intensity, for the devices before and after the treatment. The same degradation was found......We present the case of degradation of organic solar cells by sunlight concentrated to a moderate level (similar to 4 suns). This concentration level is not enough for sufficient acceleration of the photobleaching or trap-generation in the photoactive layer and therefore such short treatment (100...

  10. Kopplung metallorganischer Reaktionszentren durch den nichtplanaren Brückenliganden 2,3-Bis(2-pyridyl)pyrazin

    Czech Academy of Sciences Publication Activity Database

    Berger, S.; Scheiring, T.; Fiedler, Jan; Kaim, W.

    2004-01-01

    Roč. 630, - (2004), s. 2409-2417 ISSN 0044-2313 R&D Projects: GA MŠk OC D15.10; GA MŠk OC D14.20 Institutional research plan: CEZ:AV0Z4040901 Keywords : crystal structure * electrochemistry * iridium and rhodium Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.086, year: 2004

  11. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  12. Funktionalisierte Linker für Metallorganische Gerüstverbindungen, deren postsynthetische Modifikation und polar markierte Schutzgruppen für terminale Alkine

    OpenAIRE

    Roy, Pascal

    2011-01-01

    Metal-organic frameworks (MOFs) form the class of porous materials with the highest surface areas. This characteristic property combined with the variability of both building blocks, the inorganic node and the organic linker, makes many scientists dream of materials with very special chemical, electronic, optic and/or magnetic properties. For individual applications both building blocks, but also possibly in the framework embedded guests, play a crucial role. This work describes the synthe...

  13. Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

    Science.gov (United States)

    Wang, Cai-Feng; Hu, Bo

    2017-10-01

    ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

  14. Die kunjugative Verbrückung metallorganischer Reaktionszentren Heterozweikernkomplexen [(OC)3ClRe(.mu.-L)MCl(C5Me5)]+, M=Rh oder Ir Spektroskopische Konsequenzen reduktiver Aktivierung

    Czech Academy of Sciences Publication Activity Database

    Kaim, W.; Scheiring, T.; Weber, M.; Fiedler, Jan

    2004-01-01

    Roč. 630, - (2004), s. 1883-1893 ISSN 0044-2313 R&D Projects: GA MŠk OC D15.10; GA MŠk OC D14.20 Institutional research plan: CEZ:AV0Z4040901 Keywords : electrochemistry * iridium * rhenium Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.086, year: 2004

  15. Sequential coating upconversion NaYF{sub 4}:Yb,Tm nanocrystals with SiO{sub 2} and ZnO layers for NIR-driven photocatalytic and antibacterial applications

    Energy Technology Data Exchange (ETDEWEB)

    Tou, Meijie; Luo, Zhenguo; Bai, Song; Liu, Fangying; Chai, Qunxia; Li, Sheng; Li, Zhengquan, E-mail: zqli@zjnu.edu.cn

    2017-01-01

    ZnO is one of the most promising materials for both photocatalytic and antibacterial applications, but its wide bandgap requires the excitation of UV light which limits their applications under visible and NIR bands. Herein, we demonstrate a facile approach to synthesize core-shell-shell hybrid nanoparticles consisting of hexagonal NaYF{sub 4}:Yb,Tm, amorphous SiO{sub 2} and wurtzite ZnO. The upconversion nanocrystals are used as the core seeds and sequentially coated with an insulting shell and a semiconductor layer. Such hybrid nanoparticles can efficiently utilize the NIR light through the upconverting process, and display notable photocatalytic performance and antibacterial activity under NIR irradiation. The developed NaYF{sub 4}:Yb,Tm@SiO{sub 2}@ZnO nanoparticles are characterized with TEM, XRD, EDS, XPS and PL spectra, and their working mechanism is also elucidated. - Highlights: • Core-shell NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs were synthesized via a sequential coating method. • Hybrid NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs show NIR-light enhanced photocatalytic activity. • NIR-driven antibacterial performance has been realized with NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs. • Working mechanism of the hybrid photocatalysts as antibacterial agents was proposed.

  16. Trennung und Rekombination von Ladungsträgern in Solarzellen mit nanostrukturierter ZnO-Elektrode

    OpenAIRE

    Tornow, Julian

    2010-01-01

    In dieser Arbeit werden Elektroden aus hydrothermal auf leitfähigem Glassubstrat (Leitglas) abgeschiedenen ZnO-Nanostangen betrachtet. Die Elektroden selbst sind für sichtbares Licht transparent und werden für eine Anwendung als Solarzelle mit einer lichtabsorbierenden Schicht sensibilisiert; hier sind das entweder metallorganische Farbstoffmoleküle (N3) oder eine nur wenige Nanometer dicke Schicht aus Indiumsulfid. Für die elektrische Kontaktierung der sensibilisierten Elektrode wird entwed...

  17. Synthesis of nanofibrous ZnO by magnetron sputtering and its integration in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Ghimpu, L.; Tiginyanu, I.; Pauporte, T.; Guerin, V.M.; Lupan, O.

    2013-01-01

    This work demonstrates a cost-effective synthesis of nanofibrous ZnO layers by a magnetron sputtering. We present the results of layer characterization by scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectrometry, Raman spectroscopy, and photoluminescence which are indicative of good structural properties of the layers. The nanofibrous ZnO layers proves good structural properties offering a new nanomaterial for dye-sensitized solar cells (DSCs) application. Their successful integration in DSC for solar energy conversion is demonstrated by impedance spectroscopy, and photo-current-voltage (J-V) studies.

  18. Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

    2014-02-03

    The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

  19. Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

    International Nuclear Information System (INIS)

    Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

    2014-01-01

    The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

  20. ZIF-8 Membranes with Improved Reproducibility Fabricated from Sputter-Coated ZnO/Alumina Supports

    KAUST Repository

    Yu, Jian; Pan, Yichang; Wang, Chongqing; Lai, Zhiping

    2015-01-01

    for reproducible fabrication of high-quality membranes. In this study, high-quality ZIF-8 membranes were prepared through hydrothermal synthesis under the partial self-conversion of sputter-coated ZnO layer on porous α-alumina supports. The reproducibility

  1. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

    Directory of Open Access Journals (Sweden)

    Daria Majchrowicz

    2016-03-01

    Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

  2. Sensitivity enhancement of metal oxide thin film transistor with back gate biasing

    NARCIS (Netherlands)

    Dam, V.A.T.; Blauw, M.A.; Brongersma, S.H.; Crego-Calama, M.

    2011-01-01

    In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating

  3. Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

    NARCIS (Netherlands)

    Büyükköse, S.; Vratzov, B.; van der Veen, Johan (CTIT); Santos, P.V.; van der Wiel, Wilfred Gerard

    2013-01-01

    We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between

  4. ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

    Directory of Open Access Journals (Sweden)

    Struk Przemysław

    2014-08-01

    Full Text Available The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a~ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a~ 3 dB/cm (TE0 and TM0 modes. The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

  5. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-10-01

    Full Text Available A thin-film ZnO(n/Si(p+ heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM AC-in-Air method in addition to conductive AFM (CAFM were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON ∼3.5 V. The measured breakdown voltage (VBR and electric field (EBR for this diode are 5.4 V and 3.86 MV/cm, respectively.

  6. Atomic Layer Deposition of ZnO on Multi-walled Carbon Nanotubes and Its Use for Synthesis of CNT–ZnO Heterostructures

    Directory of Open Access Journals (Sweden)

    Li C

    2010-01-01

    Full Text Available Abstract In this article, direct coating of ZnO on PECVD-grown multi-walled carbon nanotubes (MWCNTs is achieved using atomic layer deposition (ALD. Transmission electron microscopy investigation shows that the deposited ZnO shell is continuous and uniform, in contrast to the previously reported particle morphology. The ZnO layer has a good crystalline quality as indicated by Raman and photoluminescence (PL measurements. We also show that such ZnO layer can be used as seed layer for subsequent hydrothermal growth of ZnO nanorods, resulting in branched CNT–inorganic hybrid nanostructures. Potentially, this method can also apply to the fabrication of ZnO-based hybrid nanostructures on other carbon nanomaterials.

  7. Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer

    International Nuclear Information System (INIS)

    Ghobadi, Amir; Yavuz, Halil I.; Ulusoy, T. Gamze; Icli, K. Cagatay; Ozenbas, Macit; Okyay, Ali K.

    2015-01-01

    In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO 2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed

  8. The role of ion irradiation in activating silent Raman modes via tuning in plasmonic behaviour and surface disorder of Au/ZnO/Pt NFG system

    Science.gov (United States)

    Singh, Udai B.; Gautam, Subodh K.; Kumar, Sunil; Ojha, Sunil; Ghosh, Santanu; Singh, Fouran

    2017-09-01

    The perceptible progression of Raman modes of zinc oxide (ZnO) is studied in nanostructures film gap (Au (10 nm)/ZnO (70 nm)/Pt (50 nm)) system with 1.2 MeV Xe ion irradiation. Unattainable silent Raman modes of ZnO turn out to be strongly visible after ion irradiation. The creation of ion-beam-induced lattice disorder, defects, and impurities in a ZnO layer leads to breakdown the translational crystal symmetry that results in the origin of silent modes. The formation of hot-spots in the ZnO layer of the NFG system also supports the enhancement of the intensity of Raman modes. Overall results are attributed to combined effects of lattice disorder, defects, and impurities along with plasmonic effect and explained in the framework of elastic-thermal-spike formation.

  9. ZIF-8 Membranes with Improved Reproducibility Fabricated from Sputter-Coated ZnO/Alumina Supports

    KAUST Repository

    Yu, Jian

    2015-11-10

    Zeolitic imidazolate framework-8 (ZIF-8) membrane has shown great potential for propylene/propane separation based on molecular sieving mechanism. Although diverse synthesis strategies were applied to prepare ZIF-8 membranes, it is still a challenge for reproducible fabrication of high-quality membranes. In this study, high-quality ZIF-8 membranes were prepared through hydrothermal synthesis under the partial self-conversion of sputter-coated ZnO layer on porous α-alumina supports. The reproducibility was significantly improved, compared with that from sol-gel coated ZnO layer, due to the highly controllable sputtering deposition of ZnO precursor. The relationship between the quality of as-synthesized membrane and amount of deposited ZnO was also determined. The effect of pressure drop in C3H6/C3H8 separation on separating performance was also examined.

  10. Oxygen- and water-induced degradation of an inverted polymer solar cell: the barrier effect

    DEFF Research Database (Denmark)

    Vesterager Madsen, Morten; Norrman, Kion; Krebs, Frederik C

    2011-01-01

    The work focuses on the degradation of performance induced by both water and oxygen in an inverted geometry organic photovoltaic device with emphasis on the accumulated barrier effect of the layers comprising the layer stack. By studying the exchange of oxygen in the zinc oxide (ZnO) layer...... in the humid atmosphere, correlating well with a long observed lifetime in the same atmosphere.© 2011 Society of Photo-Optical Instrumentation Engineers....

  11. Properties of GaP/ZnO heterostructures for photovoltaics

    International Nuclear Information System (INIS)

    Kovac, J.; Buc, D.; Brath, T.; Kovac, J. jr.; Caplovicova, M.; Elias, P.; Hasenohrl, S.; Novak, J.

    2012-01-01

    In this paper, we discuss the deposition of ZnO thin layers on GaP substrate and GaP nanowires by RF magnetron sputtering and their influence on the structural properties. The main goal of this work is to find the optimal technology for deposition very thin ZnO layers by RF magnetron sputtering with defined parameters to cover round GaP nanowires surface prepared by MOVPE technology. (authors)

  12. Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

    International Nuclear Information System (INIS)

    Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

    2009-01-01

    The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

  13. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  14. Simple Preparation of ZnO Nano-layer by Sol-Gel Method as Active Electrode in P3HT/ZnO Heterojunction Solar Cell

    Science.gov (United States)

    Aprilia, Annisa; Herman, Hidayat, Rahmat

    2010-10-01

    Highly transparent undoped ZnO thin films have been prepared on glass and indium tin oxide substrates with simple process by sol-gel route and dip-coating deposition. Gel precursor of ZnO was prepared from zinc acetat dehydrate solution in methanol with the addition of trietylamine as stabilizing agent. Thin layer of gel precursor was prepared by dip coating and then followed by calcination at 400° C for 5 minute in air atmosphere. The thickness of the resulted ZnO thin film produced by ten times coating is about 150 nm. The films shows high transmittance larger than 98% in the visible region (400-800 nm). Absorption is observed in the UV region with absorption onset at about 390 nm indicating varying band gap between 3.18 eV until 3.23 eV depending on the number of coating layer. The AFM image shows that the films seems to be constructed from random stacking of nano-sized ZnO particle in the order of 50 nm. Among the prepared samples, the lowest resistivity is about 1.8×107 Ωm observed in the five-layer coating film. In order to fabricate solar cell structure, P3HT was deposited onto the ZnO thin film layer by spin casting technique and then followed by metal (Au) layer deposition by thermal evaporation. The formed solar cell has the inverted type solar cell with ITO/ZnO/P3HT/Au configuration. By the insertion ZnO layer, the photocurrent was improved by more than ten orders of magnitude in comparison to that of without ZnO layer. The measured photocurrent decreases at large number of coating layer which is supposed to be related with the current limitation by the effective carrier path length in ZnO layer.

  15. Microstructural and optical properties of nanocrystalline ZnO deposited onto vertically aligned carbon nanotubes by physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Borkar, Tushar [Department of Materials Science and Engineering and Center for Advanced Research and Technology, University of North Texas, Denton 76203 (United States); Chang, Won Seok [Korea Institute of Machinery and Materials, 104 Sinseongno, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Hwang, Jun Yeon, E-mail: Junyeon.Hwang@kist.re.kr [Department of Materials Science and Engineering and Center for Advanced Research and Technology, University of North Texas, Denton 76203 (United States); Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-902 (Korea, Republic of); Shepherd, Nigel D.; Banerjee, Rajarshi [Department of Materials Science and Engineering and Center for Advanced Research and Technology, University of North Texas, Denton 76203 (United States)

    2012-10-15

    Nanocrystalline ZnO films with thicknesses of 5 nm, 10 nm, 20 nm, and 50 nm were deposited via magnetron sputtering onto the surface of vertically aligned multi-walled carbon nanotubes (MWCNTs). The ZnO/CNTs heterostructures were characterized by scanning electron microscopy, high resolution transmission electron microscopy, and X-ray diffraction studies. No structural degradation of the CNTs was observed and photoluminescence (PL) measurements of the nanostructured ZnO layers show that the optical properties of these films are typical of ZnO deposited at low temperatures. The results indicate that magnetron sputtering is a viable technique for growing heterostructures and depositing functional layers onto CNTs.

  16. Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Li Binghui [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China); Wu Chunxia [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Lu Youming [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Shen Dezhen [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2006-07-15

    MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported, which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K.

  17. Perspective: Maintaining surface-phase purity is key to efficient open air fabricated cuprous oxide solar cells

    International Nuclear Information System (INIS)

    Hoye, Robert L. Z.; Ievskaya, Yulia; MacManus-Driscoll, Judith L.; Brandt, Riley E.; Buonassisi, Tonio; Heffernan, Shane; Musselman, Kevin P.

    2015-01-01

    Electrochemically deposited Cu 2 O solar cells are receiving growing attention owing to a recent doubling in efficiency. This was enabled by the controlled chemical environment used in depositing doped ZnO layers by atomic layer deposition, which is not well suited to large-scale industrial production. While open air fabrication with atmospheric pressure spatial atomic layer deposition overcomes this limitation, we find that this approach is limited by an inability to remove the detrimental CuO layer that forms on the Cu 2 O surface. Herein, we propose strategies for achieving efficiencies in atmospherically processed cells that are equivalent to the high values achieved in vacuum processed cells

  18. Coherent acoustic phonon oscillation accompanied with backward acoustic pulse below exciton resonance in a ZnO epifilm on oxide-buffered Si(1 1 1)

    International Nuclear Information System (INIS)

    Lin, Ja-Hon; Shen, Yu-Kai; Lu, Chia-Hui; Chen, Yao-Hui; Chang, Chun-peng; Liu, Wei-Rein; Hsu, Chia-Hung; Lee, Wei-Chin; Hong, Minghwei; Kwo, Jueinai-Raynien; Hsieh, Wen-Feng

    2016-01-01

    Unlike coherent acoustic phonons (CAPs) generated from heat induced thermal stress by the coated Au film, we demonstrated the oscillation from c-ZnO epitaxial film on oxide buffered Si through a degenerate pump–probe technique. As the excited photon energy was set below the exciton resonance, the electronic stress that resulted from defect resonance was used to induce acoustic wave. The damped oscillation revealed a superposition of a high frequency and long decay CAP signal with a backward propagating acoustic pulse which was generated by the absorption of the penetrated pump beam at the Si surface and selected by the ZnO layer as the acoustic resonator. (paper)

  19. Mechanisms of electrical isolation in O+ -irradiated ZnO

    Science.gov (United States)

    Zubiaga, A.; Tuomisto, F.; Coleman, V. A.; Tan, H. H.; Jagadish, C.; Koike, K.; Sasa, S.; Inoue, M.; Yano, M.

    2008-07-01

    We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000cm-1 when the ion fluence is at most 1015cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.

  20. Monocrystalline zinc oxide films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

    2010-01-01

    In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

  1. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Riahi, H., E-mail: hassenriahi1987@gmail.com [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Thevenard, L. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Maaref, M.A. [Laboratoire Matériaux Molécules et Applications, IPEST, Université de Carthage, La Marsa (Tunisia); Gallas, B. [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France); Lemaître, A. [Laboratoire de Photonique et de Nanostructures – CNRS, Route de Nozay, 91460 Marcoussis (France); Gourdon, C [CNRS, UMR7588, Institut des Nanosciences de Paris, 4 place Jussieu, 75005 Paris (France); Sorbonne Universités, UPMC Université Paris 06, UMR7588, 4 place Jussieu, 75005 Paris (France)

    2015-12-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO{sub 2} buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO{sub 2} layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO{sub 2}/ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO{sub 2} on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO{sub 2} and ZnO on the ferromagnetic properties of GaMnAs.

  2. Rational growth of semi-polar ZnO texture on a glass substrate for optoelectronic applications

    Science.gov (United States)

    Lu, B.; Ma, M. J.; Ye, Y. H.; Lu, J. G.; He, H. P.; Ye, Z. Z.

    2013-02-01

    Semi-polar ZnO films with surface texture were grown on glass substrates via pulsed-laser deposition (PLD) through Co-Ga co-doping. Oxygen pressure (PO2) was found to have significant effects on the structural and optical properties of the Zn(Co, Ga)O (ZCGO) films. A self-textured film with (1\\,0\\,\\bar {1}\\,1) preferred orientation (PO) was achieved by varying the growth conditions including a crucial narrow PO2 window and growth time. A possible mechanism underlying the PO evolution and the final texture of the films was proposed, which can be attributed to the collaboration of the doping effect and the PO2-dependent evolutionary selection process, in which certain grains can have increased vertical growth rate with respect to the substrate surface through interplane diffusion. Moreover, the growth of undoped pure ZnO films proceeded by using the (1\\,0\\,\\bar {1}\\,1) ZCGO film as a buffer layer. The ZnO layers retained a semi-polar characteristic with improved crystallinity and better optical quality. The epitaxy-like orientation of ZnO layers grown on (1\\,0\\,\\bar {1}\\,1) ZCGO films has applications in the development of semi-polar ZnO-based light-emitting diodes.

  3. TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

    Science.gov (United States)

    Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

  4. CBE growth of high-quality ZnO epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2006-03-15

    Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

    Science.gov (United States)

    Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

    2011-05-01

    The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

  6. H{sub 2}O{sub 2}-molecular beam epitaxy of high quality ZnO

    Energy Technology Data Exchange (ETDEWEB)

    El Shaer, A.; Bakin, A.; Che Mofor, A.; Kreye, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Blaesing, J.; Krost, A. [Otto-von-Guericke-University, Institute of Experimental Physics, Magdeburg (Germany); Stoimenos, J. [Aristotele University, Physics Department, Thessaloniki (Greece); Pecz, B. [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest (Hungary)

    2007-07-15

    We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H{sub 2}O{sub 2}-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphire with a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H{sub 2}O{sub 2}-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. (orig.)

  7. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  8. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  9. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  10. Optimizing magneto-optical effects in the ferromagnetic semiconductor GaMnAs

    International Nuclear Information System (INIS)

    Riahi, H.; Thevenard, L.; Maaref, M.A.; Gallas, B.; Lemaître, A.; Gourdon, C

    2015-01-01

    A trilayer of the ferromagnetic semiconductor GaMnAs, a SiO 2 buffer layer and a piezoelectric ZnO layer, is investigated in view of its use in device implementation to study surface acoustic wave-assisted magnetization switching. The magneto-optical properties: Kerr rotation and ellipticity and magnetic contrast in Kerr microscopy images are investigated as a function of temperature. While the ZnO layer prevents any good quality imaging of magnetic domains, we show that with the SiO 2 layer only the polar Kerr rotation and the magnetic contrast are increased by a factor of 2. This result is in good quantitative agreement with calculations using an optical interference model and could be further improved. The detrimental effects of the dielectric layers capping on the Curie temperature and coercive field of the GaMnAs layer can be kept to a reasonable level. - Highlights: • GaMnAs/SiO 2 /ZnO studied for surface acoustic wave assisted magnetization switching. • The Kerr rotation and magneticcontrast increase by a factor 2 with SiO 2 on GaMnAs. • Good quantitative agreement with an optical interference model. • Little detrimental effect of SiO 2 and ZnO on the ferromagnetic properties of GaMnAs

  11. Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell

    Science.gov (United States)

    Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean

    2015-01-01

    This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>1020 cm−3) and mobilities (up to 20 cm2 V−1 s−1) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell. PMID:25753657

  12. Structural and interfacial defects in c-axis oriented LiNbO{sub 3} thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    Energy Technology Data Exchange (ETDEWEB)

    Shandilya, Swati; Sreenivas, K; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India)

    2009-05-07

    Highly c-axis oriented LiNbO{sub 3} films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO{sub 3} films under the optimized deposition condition. An extra peak at 905 cm{sup -1} was observed in the Raman spectra of LiNbO{sub 3} film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO{sub 3} films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO{sub 3} single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO{sub 3} film and the Al : ZnO layer.

  13. Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    International Nuclear Information System (INIS)

    Shandilya, Swati; Sreenivas, K; Gupta, Vinay; Tomar, Monika

    2009-01-01

    Highly c-axis oriented LiNbO 3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO 3 films under the optimized deposition condition. An extra peak at 905 cm -1 was observed in the Raman spectra of LiNbO 3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO 3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO 3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO 3 film and the Al : ZnO layer.

  14. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Ching-Cheng; Liao, Yu-Ming; Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Zhan, Jun-Yu; Lin, Tai-Yuan [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China); Hsieh, Ya-Ping [Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)

    2016-08-01

    A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

  15. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon

    2017-03-15

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  16. Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

    KAUST Repository

    Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.

    2017-01-01

    This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

  17. Substrate type < 111 >-Cu{sub 2}O/<0001 >-ZnO photovoltaic device prepared by photo-assisted electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Zamzuri, Mohd, E-mail: zamzuri@tf.me.tut.ac.jp [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); School of Manufacturing Eng., Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600 Arau, Perlis (Malaysia); Sasano, Junji [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Mohamad, Fariza Binti [Faculty of Electrical & Electronic Eng., University Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor (Malaysia); Izaki, Masanobu [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2015-11-30

    The substrate-type < 0001 > ZnO/<111 > Cu{sub 2}O photovoltaic (PV) device has been constructed by electrodeposition of a < 111 >-p-Cu{sub 2}O layer on an Au(111)/Si wafer substrate followed by stacking the n-ZnO layer by electrodeposition during light irradiation in aqueous solutions. The PV device was fabricated by stacking the Al:ZnO-window by sputtering and the top Al electrode by vacuum evaporation. The < 0001 >-ZnO layer was composed of aggregates of hexagonal columnar grains grown in the direction normal to the surface, and pores could be observed between the ZnO grains at the deposition time last 1800 s. The < 0001 >-ZnO/<111 >-Cu{sub 2}O PV device showed a photovoltaic performance under AM1.5 illumination, and showed the improved short-circuit current density of 5.87 mA cm{sup −2} by stacking the AZO-TCO due to the increase in the diffusion length of the carrier. - Highlights: • Substrate type ZnO/Cu{sub 2}O photovoltaic devices only by electrodeposition • ZnO layer was stacked on the Cu{sub 2}O layer by photo-assisted electrodeposition. • AZO/ZnO/Cu{sub 2}O photovoltaic devices with a short-circuit current density of 5.87 mA cm{sup −2}.

  18. Tailoring of the electronic properties of ZnO-polyacrylonitrile nanofibers: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Iatsunskyi, Igor, E-mail: igoyat@amu.edu.pl [NanoBioMedical Centre, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614, Poznan (Poland); Vasylenko, Andrij, E-mail: A.Vasylenko@warwick.ac.uk [Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL (United Kingdom); Institute for Condensed Matter Physics NAS Ukraine, 1 Sventsitskogo str. 79011 Lviv (Ukraine); Viter, Roman, E-mail: roman.viter@lu.lv [Institute of Atomic Physics and Spectroscopy, University of Latvia, 19 Raina Blvd., LV 1586, Riga (Latvia); Kempiński, Mateusz; Nowaczyk, Grzegosz [NanoBioMedical Centre, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614, Poznan (Poland); Jurga, Stefan [NanoBioMedical Centre, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614, Poznan (Poland); Department of Macromolecular Physics, Adam Mickiewicz University, Umultowska, 85, 61-614 Poznan (Poland); Bechelany, Mikhael, E-mail: mikhael.bechelany@univ-montp2.fr [European Institute of Membranes (IEM, ENSCM-UM-CNRS, UMR 5635), University of Montpellier, Place Eugène Bataillon, F-34095, Montpellier (France)

    2017-07-31

    Highlights: • ZnO-polyacrylonitrile (ZnO-PAN) nanofibers were obtained by electrospinning method and atomic layer deposition. • Relation between structural and electronic properties of ZnO-PAN nanofibers were established. • DFT for calculation of ZnO work function was performed. - Abstract: We report the study of ZnO-polyacrylonitrile (ZnO-PAN) nanofibers fabricated by the combination of electrospinning and atomic layer deposition. The latter technique enables us to control the size of the surface of ZnO 1D nanostructures and hence its effectiveness for energy and biosensor applications. We observe the tendency of ZnO to form nanograins with increase of the layer thickness, and investigate the influence of the grain size on the electronic properties of the nanofibers. It is demonstrated that the ZnO work function (Φ) is strongly affected by surface band bending in the ZnO layer. The observed change of Φ in ZnO layers results from the curvature of the grain surface as well as the presence of the hydroxyl and oxygen groups, adsorbed on ZnO surface and is in a good agreement with theoretical prediction.

  19. Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    Science.gov (United States)

    Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

    2009-05-01

    Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

  20. Analysis and optimization of acoustic wave micro-resonators integrating piezoelectric zinc oxide layers

    Science.gov (United States)

    Mortada, O.; Zahr, A. H.; Orlianges, J.-C.; Crunteanu, A.; Chatras, M.; Blondy, P.

    2017-02-01

    This paper reports on the design, simulation, fabrication, and test results of ZnO-based contour-mode micro-resonators integrating piezoelectric zinc oxide (ZnO) layers. The inter-digitated (IDT) type micro-resonators are fabricated on ZnO films and suspended top of 2 μm thick silicon membranes using silicon-on insulator technology. We analyze several possibilities of increasing the quality factor (Q) and the electromechanical coupling coefficient (kt2) of the devices by varying the numbers and lengths of the IDT electrodes and using different thicknesses of the ZnO layer. We designed and fabricated IDTs of different finger numbers (n = 25, 40, 50, and 80) and lengths (L = 100/130/170/200 μm) for three different thicknesses of ZnO films (200, 600, and 800 nm). The measured Q factor confirms that reducing the length and the number of IDT fingers enables us to reach better electrical performances at resonant frequencies around 700 MHz. The extracted results for an optimized micro-resonator device having an IDT length of 100 μm and 40 finger electrodes show a Q of 1180 and a kt2 of 7.4%. We demonstrate also that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600, respectively, around 700 MHz. Experimental data are in very good agreement with theoretical simulations of the fabricated devices

  1. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

    Science.gov (United States)

    Zubiaga, A.; García, J. A.; Plazaola, F.; Tuomisto, F.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

    2007-05-01

    We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W/S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.

  2. Luminescent properties of CaTiO3:Pr thin-film phosphor deposited on ZnO/ITO/glass substrate

    International Nuclear Information System (INIS)

    Chung, Sung Mook; Han, Sang Hyuk; Song, Kuk Hyun; Kim, Eung Soo; Kim, Young Jin

    2005-01-01

    Red-emitting CaTiO 3 :Pr phosphor thin films were deposited on glass, ZnO/ITO/glass, and ITO/glass substrates by RF magnetron sputtering. The effects of various substrates and heat treatment on the structural and luminous properties were investigated. The films deposited on ZnO/ITO/glass exhibited superior crystallinity and more enhanced PL and CL properties compared with those on ITO/glass. The intermediate ZnO layer between phosphor film and ITO contributed to the growing behaviors and the roughening of CaTiO 3 :Pr phosphor thin films, and consequently, to the excellent luminescence. The luminescent properties of the films were improved by following heat-treatment due to a combination of factors, namely the transformation from amorphous to poly crystalline phases, the activation of the activators, and the elimination of microdefects

  3. Investigation on structural and optical properties of ZnO film prepared by simple wet chemical method

    Science.gov (United States)

    Sholehah, Amalia; Mulyadi, Rendi; Haryono, Didied; Muttakin, Imamul; Rusbana, Tb Bahtiar; Mardiyanto

    2018-04-01

    ZnO thin layer has a broad potential application in electronic and optoelectronic devices. In this study, vertically align ZnO layers were deposited on ITO glass using wet chemistry method. The seed layers were prepared using electrodeposition technique at 3°C. The growing process was carried out using chemical bath deposition at 90°C. To improve the structural properties, two different hydrothermal treatment variations were applied separately. From the experiment, it is shown that the hydrothermal process using N2 gas has given the best result, with average diameter, crystallite size, and band-gap energy of 68.83 nm; 56.37 nm; and 3.16 eV, respectively.

  4. Microstructures and Photovoltaic Properties of Zn(AlO/Cu2O-Based Solar Cells Prepared by Spin-Coating and Electrodeposition

    Directory of Open Access Journals (Sweden)

    Takeo Oku

    2014-03-01

    Full Text Available Copper oxide (Cu2O-based heterojunction solar cells were fabricated by spin-coating and electrodeposition methods, and photovoltaic properties and microstructures were investigated. Zinc oxide (ZnO and Cu2O were used as n- and p-type semiconductors, respectively, to fabricate photovoltaic devices based on In-doped tin oxide/ZnO/Cu2O/Au heterojunction structures. Short-circuit current and fill factor increased by aluminum (Al doping in the ZnO layer, which resulted in the increase of the conversion efficiency. The efficiency was improved further by growing ZnO and Cu2O layers with larger crystallite sizes, and by optimizing the Al-doping by spin coating.

  5. Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj; Kim, Joondong, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Photoelectric and Energy Device Application Lab (PEDAL) and Department of Electrical Engineering, Incheon National University, 119 Academy Rd., Yeonsu, Incheon 406772 (Korea, Republic of); Sohn, Ahrum; Kim, Dong-Wook, E-mail: joonkim@inu.ac.kr, E-mail: dwkim@ewha.ac.kr [Department of Physics, Ewha Womans University, Seoul 120750 (Korea, Republic of)

    2016-09-05

    Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.

  6. N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

    2004-01-01

    Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

  7. ITO films with enhanced electrical properties deposited on unheated ZnO-coated polymer substrates

    International Nuclear Information System (INIS)

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Alves, H.; Goncalves, A.; Varela, J.; Nascimento, R.; Amaral, A.

    2005-01-01

    Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50-150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 x 10 -2 Ω cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9x10 -3 Ω cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility

  8. All-inorganic inverse perovskite solar cells using zinc oxide nanocolloids on spin coated perovskite layer

    Science.gov (United States)

    Shibayama, Naoyuki; Kanda, Hiroyuki; Yusa, Shin-ichi; Fukumoto, Shota; Baranwal, Ajay K.; Segawa, Hiroshi; Miyasaka, Tsutomu; Ito, Seigo

    2017-07-01

    We confirmed the influence of ZnO nanoparticle size and residual water on performance of all inorganic perovskite solar cells. By decreasing the size of the ZnO nanoparticles, the short-circuit current density ( Jsc) and open circuit photovoltage ( Voc) values are increased and the conversion efficiency is improved. Although the Voc value is not affected by the influence of residual water in the solution for preparing the ZnO layer, the Jsc value drops greatly. As a result, it was found that it is important to use the oxide nanoparticles with a small particle diameter and to reduce the water content in the oxide forming material in order to manufacture a highly efficient all inorganic perovskite solar cells.

  9. Optically transparent ZnO-based n-i-p ultraviolet photodetectors

    International Nuclear Information System (INIS)

    Wang, Kai; Vygranenko, Yuriy; Nathan, Arokia

    2007-01-01

    An optically transparent tin-doped indium oxide/ZnO/NiO n-i-p heterostructure photodiode was fabricated by ion beam assisted e-beam evaporation. The diode clearly demonstrates rectifying current-voltage (J-V) characteristics with a current rectification ratio up to 10 4 at bias ± 2 V and a low reverse current of ∼ 100 nA/cm 2 at - 5 V. Analysis of J-V characteristics including time dependence of the dark current shows that the leakage current at low biases is attributed to thermal generation via defect states, and at high biases, field-enhanced carrier generation from the ZnO layer dominates. Spectral response and linearity measurements indicate that such a diode is particularly suitable for low level of ultraviolet detection

  10. Embedded vertical dual of silver nanoparticles for improved ZnO/Si heterojunction solar cells

    Science.gov (United States)

    Shokeen, Poonam; Jain, Amit; Kapoor, Avinashi

    2017-10-01

    A ZnO/Si heterojunction solar cell is studied with plasmonic nanoparticles embedded in the active layer. Two layers of silver nanoparticles are embedded in the ZnO layer. The effect of various parameters such as vertical-interparticle distance, horizontal-interparticle distance, relative dimensions of nanoparticles, and order of particle diameters are discussed in detail. Finite-difference time-domain studies suggest that particle dimensions of the top layer of silver nanoparticles should be less than the dimensions of the underneath layer of silver nanoparticles. The resulting structure acquires the benefits of each layer and improves the device performance over a broad spectrum. The dielectric separation of plasmonic layers is observed to be an important factor in favorable plasmonic response. Electric field diagrams are used to study the scattering of an incident field by proposed structure. Results are encouraging and suggest more concerted studies of multilayer plasmonic structures.

  11. High-performance UV detector made of ultra-long ZnO bridging nanowires

    International Nuclear Information System (INIS)

    Li Yanbo; Della Valle, Florent; Simonnet, Mathieu; Yamada, Ichiro; Delaunay, Jean-Jacques

    2009-01-01

    A nanowatt UV photoconductive detector made up of ultra-long (∼100 μm) ZnO bridging nanowires has been fabricated by a single-step chemical vapor deposition (CVD) process. The electrodes, forming comb-shaped thick ZnO layers, and the sensing elements, consisting of ZnO nanowires bridging the electrodes, were fabricated simultaneously in a single-step CVD process. The device showed drastic changes (10-10 5 times) in current under a wide range of UV irradiances (10 -8 -10 -2 W cm -2 ). Moreover, the detector exhibited fast response (rise and decay times of the order of 1 s) to UV illumination in air, but no response to visible light (hν<3.2 eV). Our approach provides a simple and cost-effective way to fabricate high-performance 'visible-blind' UV detectors.

  12. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  13. Interpretation of transport measurements in ZnO-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas [Technical University of Braunschweig, Institute of High Frequency Technology, Braunschweig (Germany)

    2011-01-15

    In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers. (orig.)

  14. Interpretation of transport measurements in ZnO-thin films

    Science.gov (United States)

    Petukhov, Vladimir; Stoemenos, John; Rothman, Johan; Bakin, Andrey; Waag, Andreas

    2011-01-01

    In order to interpret results of temperature dependent Hall measurements in heteroepitaxial ZnO-thin films, we adopted a multilayer conductivity model considering carrier-transport through the interfacial layer with degenerate electron gas as well as the upper part of ZnO layers with lower conductivity. This model was applied to the temperature dependence of the carrier concentration and mobility measured by Hall effect in a ZnO-layer grown on c-sapphire with conventional high-temperature MgO and low-temperature ZnO buffer. We also compared our results with the results of maximum entropy mobility-spectrum analysis (MEMSA). The formation of the highly conductive interfacial layer was explained by analysis of transmission electron microscopy (TEM) images taken from similar layers.

  15. Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2012-06-01

    Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

  16. Improved performance of a dye-sensitized solar cell using a TiO{sub 2}/ZnO/Eosin Y electrode

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seok-Soon; Yum, Jun-Ho; Sung, Yung-Eun [Department of Materials Science and Engineering, Kwangju Institute of Science and Technology(K-JIST), Kwangju 500-712 (Korea, Republic of)

    2003-09-30

    TiO{sub 2}/ZnO/Eosin Y structure films were prepared by a one-step cathodic electrodeposition method and used as a photoanode in a dye-sensitized solar cell (DSSC). Using this TiO{sub 2}/ZnO/Eosin Y electrode in DSSC, the degradation of the cell with time was reduced and I{sub SC}, V{sub OC} and fill factor values were increased. The use of a thin ZnO layer, permitted the formation of an energy barrier at the electrode/electrolyte interface, thus reducing recombination rate and improving cell performance. In addition, the adsorbed dye molecules prepared by one-step cathodic electrodeposition with ZnO were very stable compared with that prepared by conventional immersing method, as evidenced by UV/vis absorption spectroscopy measurements.

  17. Improved performance of a dye-sensitized solar cell using a TiO{sub 2}/ZnO/Eosin Y electrode

    Energy Technology Data Exchange (ETDEWEB)

    Seoksoon Kim; Junho Yum; Yungeun Sung [Kwangju Inst. of Science and Technology (K-JIST), Dept. of Materials Science and Engineering, Kwangju (Korea)

    2003-09-30

    TiO{sub 2}/ZnO/Eosin Y structure films were prepared by a one-step cathodic electrodeposition method and used as a photoanode in a dye-sensitized solar cell (DSSC). Using this TiO{sub 2}/ZnO/Eosin Y electrode in DSSC, the degradation of the cell with time was reduced and I{sub sc}, V{sub oc} and fill factor values were increased. The use of a thin ZnO layer, permitted the formation of an energy barrier at the electrode/electrolyte interface, thus reducing recombination rate and improving cell performance. In addition, the adsorbed dye molecules prepared by one-step cathodic electrodeposition with ZnO were very stable compared with that prepared by conventional immersing method, as evidenced by UV /vis absorption spectroscopy measurements. (Author)

  18. Perspective: Maintaining surface-phase purity is key to efficient open air fabricated cuprous oxide solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; Ievskaya, Yulia; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Brandt, Riley E.; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Heffernan, Shane [Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Musselman, Kevin P. [Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2015-02-01

    Electrochemically deposited Cu{sub 2}O solar cells are receiving growing attention owing to a recent doubling in efficiency. This was enabled by the controlled chemical environment used in depositing doped ZnO layers by atomic layer deposition, which is not well suited to large-scale industrial production. While open air fabrication with atmospheric pressure spatial atomic layer deposition overcomes this limitation, we find that this approach is limited by an inability to remove the detrimental CuO layer that forms on the Cu{sub 2}O surface. Herein, we propose strategies for achieving efficiencies in atmospherically processed cells that are equivalent to the high values achieved in vacuum processed cells.

  19. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2005-05-15

    Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

  20. Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

    Science.gov (United States)

    Särkijärvi, Suvi; Sintonen, Sakari; Tuomisto, Filip; Bosund, Markus; Suihkonen, Sami; Lipsanen, Harri

    2014-07-01

    We report on the epitaxial growth of ZnO on GaN template by atomic layer deposition (ALD). Diethylzinc (DEZn) and water vapour (H2O) were used as precursors. The structure and the quality of the grown ZnO layers were studied with scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL) measurements and positron annihilation spectroscopy. The ZnO films were confirmed epitaxial, and the film quality was found to improve with increasing deposition temperature in the vicinity of the threshold temperature of two dimensional growth. We conclude that high quality ZnO thin films can be grown by ALD. Interestingly only separate Zn-vacancies were observed in the films, although ZnO thin films typically contain fairly high density of surface pits and vacancy clusters.

  1. Preferential emission into epsilon-near-zero metamaterial [Invited

    International Nuclear Information System (INIS)

    Galfsky, Tal; Sun, Zheng; Jacob, Zubin; Menon, Vinod M.

    2015-01-01

    We report the use of epsilon near zero (ENZ) metamaterial to control spontaneous emission from Zinc-Oxide (ZnO) excitons. The ENZ material consists of alternating layers of silver and alumina with subwavelength thicknesses, resulting in an effective medium where one of the components of the dielectric constant approach zero between 370nm-440nm wavelength range. Bulk ZnO with photoluminescence maximum in the ENZ regime was deposited via atomic layer deposition to obtain a smooth film with near field coupling to the ENZ metamaterial. Preferential emission from the ZnO layer into the metamaterial with suppression of forward emission by 90% in comparison to ZnO on silicon is observed. We attribute this observation to the presence of dispersionless plasmonic modes in the ENZ regime as shown by the results of theoretical modeling presented here. Integration of ENZ metamaterials with light emitters is an attractive platform for realizing a low threshold subwavelength laser

  2. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  3. Solid-state dye-sensitized solar cells based on ZnO nanoparticle and nanorod array hybrid photoanodes

    Directory of Open Access Journals (Sweden)

    Sue Hung-Jue

    2011-01-01

    Full Text Available Abstract The effect of ZnO photoanode morphology on the performance of solid-state dye-sensitized solar cells (DSSCs is reported. Four different structures of dye-loaded ZnO layers have been fabricated in conjunction with poly(3-hexylthiophene. A significant improvement in device efficiency with ZnO nanorod arrays as photoanodes has been achieved by filling the interstitial voids of the nanorod arrays with ZnO nanoparticles. The overall power conversion efficiency increases from 0.13% for a nanorod-only device to 0.34% for a device with combined nanoparticles and nanorod arrays. The higher device efficiency in solid-state DSSCs with hybrid nanorod/nanoparticle photoanodes is originated from both large surface area provided by nanoparticles for dye adsorption and efficient charge transport provided by the nanorod arrays to reduce the recombinations of photogenerated carriers.

  4. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  5. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

    Science.gov (United States)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-18

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  6. Vacuum-free processed bulk heterojunction solar cells with E-GaIn cathode as an alternative to Al electrode

    International Nuclear Information System (INIS)

    Ongul, Fatih; Yuksel, Sureyya Aydın; Bozar, Sinem; Gunes, Serap; Cakmak, Gulbeden; Guney, Hasan Yuksel; Egbe, Daniel Ayuk Mbi

    2015-01-01

    In this paper, the photovoltaic characteristics of bulk heterojunction solar cells employing an eutectic gallium–indium (EGaIn) alloy as a top metal contact which was coated by a simple and inexpensive brush-painting was investigated. The overall solar cell fabrication procedure was vacuum-free. As references, regular organic bulk heterojunction solar cells employing thermally evaporated Aluminum as a top metal contact were also fabricated. Inserting the ZnO layer between the active layer and the cathode electrodes (Al and EGaIn) improved the photovoltaic performance of the herein investigated devices. The power conversion efficiencies with and without EGaIn top electrodes were rather comparable. Hence, we have shown that the EGaIn, which is liquid at room temperature, can be used as a cathode. It allows an easy and rapid device fabrication that can be implemented through a vacuum free process. (paper)

  7. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

    Science.gov (United States)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-01

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  8. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  9. Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

    Directory of Open Access Journals (Sweden)

    Saif Saadaoui

    2017-01-01

    Full Text Available In this work, two natural dyes extracted from henna and mallow plants with a maximum absorbance at 665 nm were studied and used as sensitizers in the fabrication of dye-sensitized solar cells (DSSCs. Fourier transform infrared (FTIR spectra of the extract revealed the presence of anchoring groups and coloring constituents. Two different structures were prepared by chemical bath deposition (CBD using zinc oxide (ZnO layers to obtain ZnO nanowall (NW or nanorod (NR layers employed as a thin film at the photoanode side of the DSSC. The ZnO layers were annealed at different temperatures under various gas sources. Indeed, the forming gas (FG (N2/H2 95:5 was found to enhance the conductivity by a factor of 103 compared to nitrogen (N2 or oxygen (O2 annealing gas. The NR width varied between 40 and 100 nm and the length from 500 to 1000 nm, depending on the growth time. The obtained NWs had a length of 850 nm. The properties of the developed ZnO NW and NR layers with different thicknesses and their effect on the photovoltaic parameters were studied. An internal coverage of the ZnO NWs was also applied by the deposition of a thin TiO2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current Jsc by seven times from 2.45 × 10−3 mA/cm2 to 1.70 × 10−2 mA /cm2.

  10. ZnO/Cu/ZnO multilayer films: Structure optimization and investigation on photoelectric properties

    International Nuclear Information System (INIS)

    Liu Xiaoyu; Li Yingai; Liu Shi; Wu Honglin; Cui Haining

    2012-01-01

    A series of ZnO/Cu/ZnO multilayer films has been fabricated from zinc and copper metallic targets by simultaneous RF and DC magnetron sputtering. Numerical simulation of the optical properties of the multilayer films has been carried out in order to guide the experimental work. The influences of the ZnO and Cu layer thicknesses, and of O 2 /Ar ratio on the photoelectric and structural properties of the films were investigated. The optical and electrical properties of the multilayers were studied by optical spectrometry and four point probe measurements, respectively. The structural properties were investigated using X-ray diffraction. The performance of the multilayers as transparent conducting coatings was compared using a figure of merit. In experiments, the thickness of the ZnO layers was varied between 4 and 70 nm and those of Cu were between 8 and 37 nm. The O 2 /Ar ratios range from 1:5 to 2:1. Low sheet resistance and high transmittance were obtained when the film was prepared using an O 2 /Ar ratio of 1:4 and a thickness of ZnO (60 nm)/Cu (15 nm)/ZnO (60 nm). - Highlights: ► ZnO/Cu/ZnO films were fabricated from zinc and copper targets by sputtering. ► Transmittance reaches maximum when top and bottom ZnO thicknesses are nearly equal. ► Sheet resistance increases with increasing ZnO layer thickness. ► Variation in sheet resistance with oxygen/argon ratio is due to interface effect.

  11. Charge and field coupling phenomena at metal-oxide interfaces and their applications

    Science.gov (United States)

    Voora, Venkata M.

    Heterostructures composed of polar materials, such as ferroelectric and/or piezoelectric, are interesting due to their interface lattice charge coupling (LCC) effects. In this thesis, coupling effects between switchable ferroelectric and non-switchable piezoelectric semiconductor spontaneous polarizations are addressed. Also discussed is a dielectric continuum model approach for studying LCC effects in double layer piezoelectric semiconductor-ferroelectric and triple layer piezoelectric semiconductor-ferroelectric-piezoelectric semiconductor heterostructures. The dielectric continuum model augments the effects of electric field driven switchable polarization due to LCC with depletion layer formation in semiconductor heterostructures. Electrical investigations were used to study a reference single layer (BaTiO3), a double layer (BaTiO3-ZnO), and a triple layer (ZnO-BaTiO 3-ZnO) heterostructure grown by pulsed laser deposition. The coupling between the non-switchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO layer within double and triple layered heterostructures reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BaTiO 3 interfaces. Model analysis show very good agreement between the generated data and the experimental results. The dielectric continuum model approach allows for the derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents, and can be generalized towards multiple layer piezoelectric semiconductor-ferroelectric heterostructures. Based on experimental results the polarization coupled ZnO-BaTiO 3-ZnO heterostructures is identified as a two-terminal unipolar ferroelectric bi-junction transistor which can be utilized in memory storage devices. Furthermore it is discussed, that the triple layer heterostructure with magnetically controlled piezoelectric polarization in the ZnO layer can be utilized for non-binary storage device applications.

  12. Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

    2013-01-01

    ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

  13. Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Kriisa, Merike; Kärber, Erki [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, Malle, E-mail: malle.krunks@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, Valdek [Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Unt, Tarmo; Kukk, Mart; Mere, Arvo [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

    2014-03-31

    The growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied. Zinc acetate precursor solution was sprayed onto preheated polyimide (PI) and glass reference substrates at 380 °C. The structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method. ZnO:In layers could be grown on PI when deposited onto undoped ZnO layer acting as a buffer layer on PI. Independent of the substrate type, the ZnO/ZnO:In bilayer showed a mixed morphology from smooth canvas-like surface to large scrolled belt grains dependent on buffer layer morphology. Due to the formation of scrolled belts, the ZnO:In layer shows no preferential orientation, yet the preferred orientation of the ZnO buffer crystallites is (100) plane parallel to the substrate. The bilayers deposited on PI exhibit high light scattering capability (haze factor of 85–95% in the spectral region of 350–1500 nm). The resistivity of the ZnO:In film in bilayer on PI is 4.4 × 10{sup −2} Ω cm mainly due to low carrier mobility of 1.5 cm{sup 2}/Vs, the carrier concentration is 10{sup 20} cm{sup −3}. - Highlights: • ZnO:In layers were grown on polyimide substrate by spray pyrolysis. • The buffer layer morphology is controlled by the layer thickness and spray rate. • ZnO/ZnO:In bilayer morphology is dependent on the surface of buffer layer. • Rough buffer layer leads to rough bilayer with scrolled belts (diameter of 2–6 μm). • Due to scrolled belts layers show no preferential growth yet highly scatter light.

  14. Scaling up manufacturing of ZnO thin layers for application in flexible dye-sensitized solar cells; Aufskalierung der Herstellung von ZnO-Duennschichten fuer die Anwendung in flexiblen farbstoffsensibilisierten Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Bittner, Florian

    2012-10-19

    Flexible solar cells possess good future prospects for versatile mobile applications and can provide an important environmental benefit. One of the technologies permitting flexible solar cells is that of dye-sensitized solar cells. Among other advantages the fabrication of these organic-inorganic hybrid solar cells promises to be inexpensive in comparison to other technologies. Nanoparticular TiO{sub 2} is used predominantly as the semiconducting photoanode material; however its preparation route contains a tempering step at about 450 C, which impedes the use of flexible plastic substrates - at least with the method established for dye-sensitized solar cells. An alternative to TiO{sub 2} is ZnO, which can be fabricated for example in an electrochemical process at temperatures of only 70 C in the form of porous quasicrystalline layers. To create porosity the dye eosin Y is used as structure-directing agent. In the context of this study layers prepared by this method were compared to ZnO layers prepared by screen printing. This was performed on glass based substrates. Better conversion efficiency has been determined for dye-sensitized solar cells based on electrochemical deposited layers, while other results indicated advantages for the screen printed layers. As the morphologies of the available screen printed layers proved to be unfavourable and poorly comparable, a concluding statement on the suitability of the different types of layers was eventually not possible. Furthermore a technical simple and inexpensive method for the platinum coating of plastic substrates, which are used as counter electrodes, was tried to be determined. However, layers prepared by technically relatively complex sputtering exhibited by far better properties than layers prepared by electrochemical deposition or by chemical reduction of platinum salts. Thus, the targeted objective has not been reached. The central scope of this study was the development of an electrochemical deposition setup to demonstrate the suitability for scale-up of the fabrication method of ZnO/eosin Y hybrid layers. This miniplant setup was characterised in detail and appropriate deposition parameters have been determined. Porous ZnO layers have been prepared successfully on FTO glass substrates on an area of 38.88 cm{sup 2} and on ITO-PET plastic substrates on an area of 34.56 cm{sup 2}. The suitability of the fabricated layers for the assembly of flexible dye-sensitized solar cells has been demonstrated by means of several operative modules. While these modules achieved decent conversion efficiencies of up to 2.58 % under low light intensities, strongly decreasing conversion efficiencies were observed with increasing light intensities. Too high series resistances have been identified as the cause. (orig.)

  15. Electrodeposition of nanoporous ZnO on Al-doped ZnO leading to a highly organized structure for integration in Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Renou G.

    2010-10-01

    Full Text Available In the present study, we propose an improvement of the anode configuration in Zinc Oxide based Dye Sensitized Solar Cells (DSSC. Instead of the classical configuration, which is composed by two different metal oxides: one transparent conducting oxide (TCO for the substrate and one nanostructured metal oxide for supporting the dye, the new approach is to use ZnO as unique material. Thus, nanoporous zinc oxide films have been electrodeposited on a sputtered Al doped ZnO layers with varying thicknesses up to 6 μm. The evolution of the porosity of the structure has been studied by scanning electron microscope (SEM and electrochemical impedance spectroscopy and compared with standard nanoporous ZnO grown on fluorine doped tin oxide (SnO2:F noted FTO. This results firstly in the modification of the nanoporous structure morphology and secondly a better adhesion between the nanoporous layer and the substrate. Organization in the nanoporous material is enhanced with regular pores arrays and perpendicular to the substrate. Dye sensitized solar cells based on this simplified architecture present efficiencies up to 4.2% and 4.5% with N719 and D149 respectively as sensitizers. Higher fill factor and Voc are found in comparison with the one obtained for deposition on the classical transparent conducting oxide (FTO, which denote improved electrical transfer properties.

  16. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    Science.gov (United States)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  17. Toward hydrogen detection at room temperature with printed ZnO nanoceramics films activated with halogen lighting

    Science.gov (United States)

    Nguyen, Van Son; Jubera, Véronique; Garcia, Alain; Debéda, Hélène

    2015-12-01

    Though semiconducting properties of ZnO have been extensively investigated under hazardous gases, research is still necessary for low-cost sensors working at room temperature. Study of printed ZnO nanopowders-based sensors has been undertaken for hydrogen detection. A ZnO paste made with commercial nanopowders is deposited onto interdigitated Pt electrodes and sintered at 400 °C. The ZnO layer structure and morphology are first examined by XRD, SEM, AFM and emission/excitation spectra prior to the study of the effect of UV-light on the electrical conduction of the semiconductor oxide. The response to hydrogen exposure is subsequently examined, showing that low UV-light provided by halogen lighting enhances the gas response and allows detection at room temperature with gas responses similar to those obtained in dark conditions at 150 °C. A gas response of 44% (relative change in current) under 300 ppm is obtained at room temperature. Moreover, it is demonstrated that very low UV-light power (15 μW/mm2) provided by the halogen lamp is sufficient to give sensitivities as high as those for much higher powers obtained with a UV LED (7.7 mW/mm2). These results are comparable to those obtained by others for 1D or 2D ZnO nanostructures working at room temperature or at temperatures up to 250 °C.

  18. Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

    Science.gov (United States)

    Jian, Wen-Yi; You, Hsin-Chiang; Wu, Cheng-Yen

    2018-01-01

    In this work, we used a sol-gel process to fabricate a ZnO-ZrO2-stacked resistive switching random access memory (ReRAM) device and investigated its switching mechanism. The Gibbs free energy in ZnO, which is higher than that in ZrO2, facilitates the oxidation and reduction reactions of filaments in the ZnO layer. The current-voltage (I-V) characteristics of the device revealed a forming-free operation because of nonlattice oxygen in the oxide layer. In addition, the device can operate under bipolar or unipolar conditions with a reset voltage of 0 to ±2 V, indicating that in this device, Joule heating dominates at reset and the electric field dominates in the set process. Furthermore, the characteristics reveal why the fabricated device exhibits a greater discrete distribution phenomenon for the set voltage than for the reset voltage. These results will enable the fabrication of future ReRAM devices with double-layer oxide structures with improved characteristics.

  19. Specifications of ZnO growth for heterostructure solar cell and PC1D based simulations

    Directory of Open Access Journals (Sweden)

    Babar Hussain

    2015-12-01

    Full Text Available This data article is related to our recently published article (Hussain et al., in press [1] where we have proposed a new solar cell model based on n-ZnO as front layer and p-Si as rear region. The ZnO layer will act as an active n-layer as well as antireflection (AR coating saving considerable processing cost. There are several reports presenting use of ZnO as window/antireflection coating in solar cells (Mansoor et al., 2015; Haq et al., 2014; Hussain et al., 2014; Matsui et al., 2014; Ding et al., 2014 [2–6] but, here, we provide data specifically related to simultaneous use of ZnO as n-layer and AR coating. Apart from the information we already published, we provide additional data related to growth of ZnO (with and without Ga incorporation layers using MOCVD. The data related to PC1D based simulation of internal and external quantum efficiencies with and without antireflection effects of ZnO as well as the effects of doping level in p-Si on current–voltage characteristics have been provided.

  20. Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Deng, R.; Yao, B.; Li, Y.F.; Xu, Y.; Li, J.C.; Li, B.H.; Zhang, Z.Z.; Zhang, L.G.; Zhao, H.F.; Shen, D.Z.

    2013-01-01

    The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. - Highlights: ► The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ► The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V. ► The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.

  1. Tunable resistive switching behaviour in ferroelectric–ZnO bilayer films

    International Nuclear Information System (INIS)

    Zhou Mingxiu; Li Ziwei; Chen Bo; Wan Jianguo; Liu Junming

    2013-01-01

    Pb(Zr 0.52 Ti 0.48 )O 3 /ZnO bilayer films with various ZnO-layer thicknesses were prepared by a sol–gel process, and their phase structures, electric conduction and polarization behaviour were measured. The results showed that the preferential crystal orientation of the ZnO layer changed with a change in its thickness. The strong dependence of both asymmetric current–voltage and polarization–voltage characteristics on the ZnO-layer thickness was observed. The resistance ratio of the high-resistance state (HRS) to the low-resistance state (LRS) increased with increasing ZnO-layer thickness, and a high rectification ratio was obtained in the bilayer film with an optimized ZnO-layer thickness. The combined effects of interface polarization coupling and energy band structure on the resistive switching behaviour of the bilayer films were revealed, and the electric conduction mechanisms of the bilayer films at both HRS and LRS were analysed in detail. This work presents an effective method to modulate the resistive switching behaviour of ferroelectric–ZnO heterostructures, which is significant in designing high-performance ferroelectric–semiconductor heterostructures for actual applications. (paper)

  2. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Yu-Kuang Liao

    2017-04-01

    Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

  3. Cooptimization of Adhesion and Power Conversion Efficiency of Organic Solar Cells by Controlling Surface Energy of Buffer Layers.

    Science.gov (United States)

    Lee, Inhwa; Noh, Jonghyeon; Lee, Jung-Yong; Kim, Taek-Soo

    2017-10-25

    Here, we demonstrate the cooptimization of the interfacial fracture energy and power conversion efficiency (PCE) of poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT)-based organic solar cells (OSCs) by surface treatments of the buffer layer. The investigated surface treatments of the buffer layer simultaneously changed the crack path and interfacial fracture energy of OSCs under mechanical stress and the work function of the buffer layer. To investigate the effects of surface treatments, the work of adhesion values were calculated and matched with the experimental results based on the Owens-Wendt model. Subsequently, we fabricated OSCs on surface-treated buffer layers. In particular, ZnO layers treated with poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) simultaneously satisfied the high mechanical reliability and PCE of OSCs by achieving high work of adhesion and optimized work function.

  4. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  5. Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

    Science.gov (United States)

    Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

    2016-11-02

    Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

  6. Effect of hydrogen on ZnO films and Au/ZnO Schottky contacts

    International Nuclear Information System (INIS)

    Tsiarapas, C; Girginoudi, D; Georgoulas, N

    2014-01-01

    The structural, optical and electrical properties of ZnO films for different amounts of incorporated hydrogen (H), as well as the electrical characteristics of Au Schottky contacts based on these ZnO layers have been investigated. The films were deposited with the dc-magnetron sputtering technique, varying the H flow rate in the Ar/H sputtering gas. We found a significant improvement of the crystallinity (as obtained from x-ray diffraction spectra), Hall mobility and resistivity as the H concentration per vol. [H 2 ] (during deposition) increases from 0% to 33.3%, which is followed by degradation for further [H 2 ] increase. A high dependence of the carrier mobility on the grain size is also noted. The Schottky diodes were characterized through current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. In correlation with the basic film properties, we obtained the best results for the Schottky diodes with [H 2 ] = 33.3%, in terms of higher rectification ratio, lower ideality factor (η) and series resistance (R s ). Both the electron concentration n and the ionized donors' concentration N D (obtained from C–V curves) increase constantly with [H 2 ] increase, and that seems to be consistent with our suggestion that H acts as a donor in ZnO. (paper)

  7. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  8. Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

    Directory of Open Access Journals (Sweden)

    Long Giang Bach

    2016-01-01

    Full Text Available We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002 crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110 preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm/ZnO (766 nm exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

  9. Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

    DEFF Research Database (Denmark)

    Duchamp, Martial; Söderström, K.; Jeangros, Q.

    2011-01-01

    The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through...... the creation of surface plasmon polaritons. Here, we use transmission electron microscopy (TEM) techniques to study the grain structure of a Ag thin-film that was sputtered on top of 2-μm-thick rough ZnO layer - defects, such as twin-boundaries have been observed. A smoothing of the top Ag surface was also...... observed after ex-situ annealing. Electron energy-loss spectroscopy with a monochromatic beam was used to measure the surface plasmon resonance with nm spatial resolution. 1 eV and 3 eV Ag surface plasmon resonances have been observed on as-grown layers. Such measurements provide valuable information about...

  10. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, D.; Barman, P. B.; Hazra, S. K., E-mail: surajithazra@yahoo.co.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh-173234 (India); Dutta, D. [IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700032 (India); Kumar, M.; Som, T. [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  11. Co-sensitization of ZnO by CdS quantum dots in natural dye-sensitized solar cells with polymeric electrolytes to improve the cell stability

    Energy Technology Data Exchange (ETDEWEB)

    Junhom, W.; Magaraphan, R. [Polymer Processing and Polymer Nanomaterials Research Unit, Petroleum and Petrochemical College, Chulalongkorn University, Bangkok (Thailand)

    2015-05-22

    The CdS quantum dots (QDs) were deposited on ZnO layer by chemical bath deposition method to absorb light in the shorter wavelength region and used as photoanode in the dye sensitized solar cell (DSSCs) with natural dye extracted from Noni leaves. Microstructures of CdS-ZnO from various dipping time were characterized by XRD, FE-SEM and EDX. The results showed that the CdS is hexagonal structure and the amount of CdS increases when the dipping time increases. The maximal conversion efficiency of 0.292% was achieved by the DSSCs based on CdS QDs-sensitized ZnO film obtained from 9 min-dipping time. Furthermore, the stability of DSSCs was improved by using polymeric electrolyte. Poly (acrylic acid) (PAA) and Polyacrylamide (PAM) were introduced to CdS QDs-sensitized ZnO film from 9 min-dipping time. Each polymeric electrolyte was prepared by swelling from 0.1-2.0 %w in H2O. The maximal conversion efficiency of 0.207% was achieved for DSSCs based on CdS QDs-sensitized ZnO film with PAM 1.0% and the conversion efficiency was decreased 25% when it was left for1 hr.

  12. Enhanced electrical conductivity in Xe ion irradiated CNT based transparent conducting electrode on PET substrate

    Science.gov (United States)

    Surbhi; Sharma, Vikas; Singh, Satyavir; Garg, Priyanka; Asokan, K.; Sachdev, Kanupriya

    2018-02-01

    An investigation of MWCNT-based hybrid electrode films with improved electrical conductivity after Xe ion irradiation is reported. A multilayer hybrid structure of Ag-MWCNT layer embedded in between two ZnO layers was fabricated and evaluated, pre and post 100 keV Xe ion irradiation, for their performance as Transparent Conducting Electrode in terms of their optical and electrical properties. X-ray diffraction pattern exhibits highly c-axis oriented ZnO films with a small variation in lattice parameters with an increase in ion fluence. There is no significant change in the surface roughness of these films. Raman spectra were used to confirm the presence of CNT. The pristine multilayer films exhibit an average transmittance of ˜70% in the entire visible region and the transmittance increases with Xe ion fluence. A significant enhancement in electrical conductivity post-Xe ion irradiation viz from 1.14 × 10-7 Ω-1 cm-1 (pristine) to 7.04 × 103 Ω-1 cm-1 is seen which is due to the high connectivity in the top layer with Ag-CNT hybrid layer facilitating the smooth transfer of electrons.

  13. Development of a Flexible Lead-Free Piezoelectric Transducer for Health Monitoring in the Space Environment

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2015-11-01

    Full Text Available In this work we report on the fabrication process for the development of a flexible piezopolymeric transducer for health monitoring applications, based on lead-free, piezoelectric zinc oxide (ZnO thin films. All the selected materials are compatible with the space environment and were deposited by the RF magnetron sputtering technique at room temperature, in view of preserving the total flexibility of the structures, which is an important requirement to guarantee coupling with cylindrical fuel tanks whose integrity we want to monitor. The overall transducer architecture was made of a c-axis-oriented ZnO thin film coupled to a pair of flexible Polyimide foils coated with gold (Au electrodes. The fabrication process started with the deposition of the bottom electrode on Polyimide foils. The ZnO thin film and the top electrode were then deposited onto the Au/Polyimide substrates. Both the electrodes and ZnO layer were properly patterned by wet-chemical etching and optical lithography. The assembly of the final structure was then obtained by gluing the upper and lower Polyimide foils with an epoxy resin capable of guaranteeing low outgassing levels, as well as adequate thermal and electrical insulation of the transducers. The piezoelectric behavior of the prototypes was confirmed and evaluated by measuring the mechanical displacement induced from the application of an external voltage.

  14. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  15. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  16. Environmental sensing with optical fiber sensors processed with focused ion beam and atomic layer deposition

    Science.gov (United States)

    Flores, Raquel; Janeiro, Ricardo; Dahlem, Marcus; Viegas, Jaime

    2015-03-01

    We report an optical fiber chemical sensor based on a focused ion beam processed optical fiber. The demonstrated sensor is based on a cavity formed onto a standard 1550 nm single-mode fiber by either chemical etching, focused ion beam milling (FIB) or femtosecond laser ablation, on which side channels are drilled by either ion beam milling or femtosecond laser irradiation. The encapsulation of the cavity is achieved by optimized fusion splicing onto a standard single or multimode fiber. The empty cavity can be used as semi-curved Fabry-Pérot resonator for gas or liquid sensing. Increased reflectivity of the formed cavity mirrors can be achieved with atomic layer deposition (ALD) of alternating metal oxides. For chemical selective optical sensors, we demonstrate the same FIB-formed cavity concept, but filled with different materials, such as polydimethylsiloxane (PDMS), poly(methyl methacrylate) (PMMA) which show selective swelling when immersed in different solvents. Finally, a reducing agent sensor based on a FIB formed cavity partially sealed by fusion splicing and coated with a thin ZnO layer by ALD is presented and the results discussed. Sensor interrogation is achieved with spectral or multi-channel intensity measurements.

  17. Electrical properties of ZnO nanorods and layers

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

    2007-07-01

    ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

  18. The kinetic of photoreactions in zinc oxide microrods

    Science.gov (United States)

    Fiedot, M.; Rac, O.; Suchorska-Woźniak, P.; Nawrot, W.; Teterycz, H.

    2016-01-01

    Zinc oxide is the oldest sensing material used in the chemical resistive gas sensors which allow to detect many gases, such as carbon oxide, nitrogen oxides and other. This material is also widely used in medicine and daily life as antibacterial agent. For this reason this semiconductor is often synthesized on the polymer substrates such as foils and textiles. In presented results zinc oxide was deposited on the surface of poly(ethylene terephthalate) foil to obtain antibacterial material. As synthesis method chemical bath deposition was chosen. The growth of zinc oxide structures was carried out in water solution of zinc nitrate (V) and hexamethylenetetramine in 90°C during 9 h. Because antibacterial properties of ZnO are strongly depended on photocatalytic and electric properties of this semiconductor impedance spectroscopy measurements were carried out. During the measurements material was tested with and without UV light to determinate the kinetic of photoreactions in zinc oxide. Moreover the composite was analyzed by XRD diffraction and scanning electron microscope. The X-ray analysis indicated that obtained material has the structure of wurtzite which is typical of zinc oxide. SEM images showed that on the PET foil microrods of ZnO were formed. The impedance spectroscopy measurements of ZnO layer showed that in UV light significant changes in the conductivity of the material are observed.

  19. The Optical and Electrical Properties of ZnO/Ag/ZnO Films on Flexible Substrate

    Science.gov (United States)

    Yu, Xiaojing; Zhang, Dongyan; Wang, Pangpang; Murakami, Ri-Ichi; Ding, Bingjun; Song, Xiaoping

    The deposition of ZnO/Ag/ZnO film on polyethylene terephthalate (PET) substrate was fabricated by DC magnetron sputtering method. The thicknesses of ZnO layers were 30 nm and Ag films' thicknesses were changed from 1 nm to 6 nm by controlled the sputtering time. This kind of film can be used as transparent conductive oxide (TCO) materials. The electrical and optical properties of composite layers were determined by Ag films. The optimum sputtering time of Ag thin films was found to be 20 s for the high optical transmittance with good electrical conductivity. The ZnO/Ag(20 s)/ZnO layer, which has high optical transmittance of 73% at 550 nm, shows sheet resistance as low as 6.7 ohm/sq. These multilayer transparent films had low electrical resistance as the widely used transparent conductive oxide electrodes. SEM, XRD, the UV-Vis-NIR and Hall Effect measurement system were used to characterize properties of fabricated films. The reasons for the change of transmittance and resistance will also be interpreted.

  20. Design Of A Bi-Functional α-Fe2O3/Zn2SiO4:Mn2+ By Layer-By-Layer Assembly Method

    Directory of Open Access Journals (Sweden)

    Yu Ri

    2015-06-01

    Full Text Available This work describes the design of bi-functional α-Fe2O3/Zn2SiO4:Mn2+ using a two-step coating process. We propose a combination of pigments (α-Fe2O3 and phosphor (Zn2SiO4:Mn2+ glaze which is assembled using a layer-by-layer method. A silica-coated α-Fe2O3 pigment was obtained by a sol-gel method and a Zn2+ precursor was then added to the silica-coated α-Fe2O3 to create a ZnO layer. Finally, the Zn2SiO4:Mn2+ layer was prepared with the addition of Mn2+ ions to serve as a phosphor precursor in the multi-coated α-Fe2O3, followed by annealing at a temperature above 1000°C. Details of the phase structure, color and optical properties of the multi-functional α-Fe2O3/Zn2SiO4:Mn2+ were characterized by transmission electron microscopy and X-ray diffraction analyses.

  1. The characterization of an oxide interfacial coating for ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Coons, Timothy P., E-mail: tpcoons@gmail.com [Department of Chemistry, Unit 3060, University of Connecticut, 55 North Eagleville Road, Storrs, CT 06269-3060 (United States); Reutenauer, Justin W.; Mercado, Andrew [Department of Chemistry, Unit 3060, University of Connecticut, 55 North Eagleville Road, Storrs, CT 06269-3060 (United States); Kmetz, Michael A. [Pratt and Whitney, 400 Main Street M/S 114-43, East Hartford, CT 06108 (United States); Suib, Steven L. [Department of Chemistry, Unit 3060, University of Connecticut, 55 North Eagleville Road, Storrs, CT 06269-3060 (United States)

    2013-06-20

    This work focused on the use of metal organic chemical vapor deposition (MOCVD) to deposit a zinc oxide (ZnO) coating on ceramic fibers as an interfacial system for continuous fiber reinforced ceramic matrix composites (CFR-CMCs). ZnO coatings were deposited on ceramic grade (CG) Nicalon{sup ™}, Hi-Nicalon{sup ™}, and Hi-Nicalon{sup ™} Type S fabric by the thermal decomposition of zinc acetate dihydrate in a low pressure hot wall CVD reactor. A duplex SiO{sub 2} coating was also deposited in order to protect the ZnO layer from the reducing conditions during composite fabrication. Tow testing was used to evaluate the effect of the ZnO coating on the strength retention of the ceramic fabrics. Single strand unidirectional mini composites were fabricated by infiltrating SiC into the ZnO/SiO{sub 2} duplex coated tows in order to understand the interfacial properties of the ZnO coating. The mini composite utilizing Hi-Nicalon{sup ™} Type S produced the highest ultimate tensile strength (UTS) of 330 MPa. The coated fabrics and the mini composites were characterized using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and scanning Auger microscopy (SAM)

  2. Interpretation of the two-components observed in high resolution X-ray diffraction {omega} scan peaks for mosaic ZnO thin films grown on c-sapphire substrates using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durand, O., E-mail: olivier.durand@insa-rennes.fr [Universite Europeenne de Bretagne, INSA, FOTON, UMR 6082, 20 avenue des Buttes de Coesmes, F-35708 RENNES (France); Letoublon, A. [Universite Europeenne de Bretagne, INSA, FOTON, UMR 6082, 20 avenue des Buttes de Coesmes, F-35708 RENNES (France); Rogers, D.J. [Nanovation SARL, 103 bis rue de Versailles, 91400 Orsay (France); SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS (United Kingdom); Hosseini Teherani, F. [Nanovation SARL, 103 bis rue de Versailles, 91400 Orsay (France)

    2011-07-29

    X-ray scattering methods were applied to the study of thin mosaic ZnO layers deposited on c-Al{sub 2}O{sub 3} substrates using Pulsed Laser Deposition. High Resolution (HR) studies revealed two components in the {omega} scans (transverse scans) which were not resolved in conventional 'open-detector' {omega} rocking curves: a narrow, resolution-limited, peak, characteristic of long-range correlation, and a broad peak, attributed to defect-related diffuse-scattering inducing a limited transverse structural correlation length. Thus, for such mosaic films, the conventional {omega} rocking curve Full Width at Half Maximum linewidth was found to be ill-adapted as an overall figure-of-merit for the structural quality, in that the different contributions were not meaningfully represented. A 'Williamson-Hall like' integral breadth (IB) metric for the HR (00.l) transverse-scans was thus developed as a reliable, fast, accurate and robust alternative to the rocking curve linewidth for routine non-destructive testing of such mosaic thin films. For a typical ZnO/c-Al{sub 2}O{sub 3} film, the IB method gave a limited structural correlation length of 110 nm {+-} 9 nm. The results are coherent with a thin film containing misfit dislocations at the film-substrate interface.

  3. Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures.

    Science.gov (United States)

    Pan, Dan-Feng; Bi, Gui-Feng; Chen, Guang-Yi; Zhang, Hao; Liu, Jun-Ming; Wang, Guang-Hou; Wan, Jian-Guo

    2016-03-08

    Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

  4. Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Qianni Zhang

    2018-01-01

    Full Text Available The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL at a low temperature in inverted organic solar cells (OSCs. However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxide tends to precipitate metal salts due to acid-base neutralization reactions. In this paper, we investigate the inverted OSCs with Al-doped-ZnO ETL made by immersion of metallic Al into the Zn-ammine precursor solution. The effects of ZnO layer with different immersion time of Al on film properties and solar cell performance have been studied. The results show that, with the Al-doped-ZnO ETL, an improvement of the device performance could be obtained compared with the device with the un-doped ZnO ETL. The improved device performance is attributed to the enhancement of charge carrier mobility leading to a decreased charge carrier recombination and improved charge collection efficiency. The fabricated thin film transistors with the same ZnO or AZO films confirm the improved electrical characteristics of the Al doped ZnO film.

  5. N{sup +} ion-implantation-induced defects in ZnO studied with a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z Q [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Sekiguchi, T [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Yuan, X L [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Maekawa, M [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Kawasuso, A [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan)

    2004-01-21

    Undoped ZnO single crystals were implanted with multiple-energy N{sup +} ions ranging from 50 to 380 keV with doses from 10{sup 12} to 10{sup 14} cm{sup -2}. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N{sup +} implantation, the ZnO layer still shows n-type conductivity.

  6. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  7. HOPG/ZnO/HOPG pressure sensor

    Science.gov (United States)

    Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

    2017-12-01

    Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

  8. Spray pyrolysis of ZnO-TFTs utilizing a perfume atomizer

    Science.gov (United States)

    Ortel, Marlis; Trostyanskaya, Yulia Sergeeva; Wagner, Veit

    2013-08-01

    Successful deposition of ZnO layers from non-toxic solvent by utilizing a perfume atomizer is demonstrated. The adsorption edge of the zinc oxide films was found to be 3.22 eV which is in good agreement with literature. In addition it is found that the homogeneity of the films increases in side geometry with increasing distance to the perfume atomizer due to the droplet size distribution along the x-axis of the aerosol. The films were used to fabricate ZnO-TFTs. A dominating influence of the grain sizes can be excluded by correlating atomic force microscopy (AFM) images to the electrical properties of the transistors deposited in different geometries but a strong influence of the transistor performance on the growth rate was found. The increase in performance with decreasing growth rate was attributed to a longer reaction time decreasing the impurity level in the films. The linear mobility, the on-set voltage and the on-off current ratio are found to be 5 cm2 V-1 s-1, 0 V and 106 for small growth rates, respectively. Hence the transistors show high mobility and an excellent switching behavior.

  9. Enhancement of photovoltaic performance of flexible perovskite solar cells by means of ionic liquid interface modification in a low temperature all solution process

    Science.gov (United States)

    Chu, Weijing; Yang, Junyou; Jiang, Qinghui; Li, Xin; Xin, Jiwu

    2018-05-01

    The quality of interface between the electron transport layer (ETL) and perovskite is very crucial to the photovoltaic performance of a flexible perovskite solar cell fabricated under low-temperature process. This work demonstrates a room temperature ionic liquid modification strategy to the interface between ZnO layer and MAPbI3 film for high performance flexible perovskite solar cells based on a PET substrate. [BMIM]BF4 ionic liquid modification can significantly improve the surface quality and wettability of the ZnO ETL, thus greatly increase the charge mobility of ZnO ETL and improve the crystalline of perovskite film based on it. Moreover, the dipolar polarization layer among the ZnO ETL with perovskite, built by modification, can adjust the energy level between the ZnO ETL and perovskite and facilitates the charge extraction. Therefore, an overall power conversion efficiency (PCE) of 12.1% have been achieved under standard illumination, it increases by 1.4 times of the flexible perovskite solar cells on a pristine ZnO ETL.

  10. Effect of ALD surface treatment on structural and optical properties of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin-Tak [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, Hyukhyun, E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, Won-Jae [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of)

    2013-07-01

    In this study, we report on the improvement of the optical and structural properties of ZnO nanorods using atomic layer deposition (ALD) on seed ZnO nanorods. After the initial growth of ZnO seed nanorods by hydrothermal synthesis for 1 h, a ZnO layer with a thickness of 10 nm was deposited on the initial ZnO seed nanorods using ALD. Then ZnO was further grown by hydrothermal synthesis for 4 h. The samples were characterized using room temperature photoluminescence (PL), field emission-scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). From this experiment, it was found that the ZnO nanorods with the ALD surface treatment show improved optical and structural properties when compared with the ZnO nanorods grown only by hydrothermal synthesis. The ZnO nanorods with the ALD surface treatment show about 2.7 times higher XRD (0 0 2) peak intensity, about 2.64 times higher PL NBE peak intensity, and about 3.1 times better NBE/DLE ratio than the ZnO nanorods without an ALD surface treatment.

  11. The characterization of an oxide interfacial coating for ceramic matrix composites

    International Nuclear Information System (INIS)

    Coons, Timothy P.; Reutenauer, Justin W.; Mercado, Andrew; Kmetz, Michael A.; Suib, Steven L.

    2013-01-01

    This work focused on the use of metal organic chemical vapor deposition (MOCVD) to deposit a zinc oxide (ZnO) coating on ceramic fibers as an interfacial system for continuous fiber reinforced ceramic matrix composites (CFR-CMCs). ZnO coatings were deposited on ceramic grade (CG) Nicalon ™ , Hi-Nicalon ™ , and Hi-Nicalon ™ Type S fabric by the thermal decomposition of zinc acetate dihydrate in a low pressure hot wall CVD reactor. A duplex SiO 2 coating was also deposited in order to protect the ZnO layer from the reducing conditions during composite fabrication. Tow testing was used to evaluate the effect of the ZnO coating on the strength retention of the ceramic fabrics. Single strand unidirectional mini composites were fabricated by infiltrating SiC into the ZnO/SiO 2 duplex coated tows in order to understand the interfacial properties of the ZnO coating. The mini composite utilizing Hi-Nicalon ™ Type S produced the highest ultimate tensile strength (UTS) of 330 MPa. The coated fabrics and the mini composites were characterized using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and scanning Auger microscopy (SAM)

  12. Piezoelectric Zinc Oxide Based MEMS Acoustic Sensor

    Directory of Open Access Journals (Sweden)

    Aarti Arora

    2008-04-01

    Full Text Available An acoustic sensors exhibiting good sensitivity was fabricated using MEMS technology having piezoelectric zinc oxide as a dielectric between two plates of capacitor. Thin film zinc oxide has structural, piezoelectric and optical properties for surface acoustic wave (SAW and bulk acoustic wave (BAW devices. Oxygen effficient films are transparent and insulating having wide applications for sensors and transducers. A rf sputtered piezoelectric ZnO layer transforms the mechanical deflection of a thin etched silicon diaphragm into a piezoelectric charge. For 25-micron thin diaphragm Si was etched in tetramethylammonium hydroxide solution using bulk micromachining. This was followed by deposition of sandwiched structure composed of bottom aluminum electrode, sputtered 3 micron ZnO film and top aluminum electrode. A glass having 1 mm diameter hole was bonded on backside of device to compensate sound pressure in side the cavity. The measured value of central capacitance and dissipation factor of the fabricated MEMS acoustic sensor was found to be 82.4pF and 0.115 respectively, where as the value of ~176 pF was obtained for the rim capacitance with a dissipation factor of 0.138. The response of the acoustic sensors was reproducible for the devices prepared under similar processing conditions under different batches. The acoustic sensor was found to be working from 30Hz to 8KHz with a sensitivity of 139µV/Pa under varying acoustic pressure.

  13. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  14. Influence of ZnO:Al, MoO3 and PEDOT:PSS on efficiency in standard and inverted polymer solar cells based on polyazomethine and poly(3-hexylthiophene)

    International Nuclear Information System (INIS)

    Iwan, Agnieszka; Palewicz, Marcin; Tazbir, Igor; Boharewicz, Bartosz; Pietruszka, Rafal; Filapek, Michal; Wojtkiewicz, Jacek; Witkowski, Bartłomiej Sławomir; Granek, Filip; Godlewski, Marek

    2016-01-01

    This paper is devoted to the development of standard and inverted polymer solar cells based on polyazomethine (PAZ-Car-TPA), poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61 butyric acid methyl ester (PCBM). We analyzed the influence of: (i) PEDOT:PSS or MoO 3 as a hole transporting layer in standard devices, (ii) aluminum doping level (from 0 to 3.7%) in ZnO (obtained by atomic layer deposition, ALD) applied as an electron transporting layer in inverted solar cells and (iii) the method applied to obtain ZnO layer (ALD or sol-gel) on its photovoltaic properties. The best device configuration is ITO/AZO (3% Al)/P3HT:PCBM/MoO 3 /Ag which exhibits a power conversion efficiency of 1.51% under about 100 mW/cm 2 AM 1.5 G simulated solar emission. Devices were additionally tested by electrochemical impedance spectroscopy. HOMO-LUMO levels of PAZ-Car-TPA and its mixture with HCl, H 2 SO 4 , p-toluenesulfonic acid, PEDOT:PSS and water were analyzed by cyclic voltammetry and quantum mechanical calculations using Density Functional Theory method.

  15. Aqueous chemical growth of free standing vertical ZnO nanoprisms, nanorods and nanodiskettes with improved texture co-efficient and tunable size uniformity

    Energy Technology Data Exchange (ETDEWEB)

    Ram, S.D.G. [Bharath Niketan Engineering College, Department of Physics, Aundipatti (India); Ravi, G.; Mahalingam, T. [Alagappa University, Department of Physics, Karaikudi (India); Athimoolam, A. [Fatima Michael College of Engineering and Technology, Department of Physics, Madurai (India); Kulandainathan, M.A. [Central Electro Chemical Research Institute, Karaikudi (India)

    2011-12-15

    Tuning the morphology, size and aspect ratio of free standing ZnO nanostructured arrays by a simple hydrothermal method is reported. Pre-coated ZnO seed layers of two different thicknesses ({approx}350 nm or 550 nm) were used as substrates to grow ZnO nanostructures for the study. Various parameters such as chemical ambience, pH of the solution, strength of the Zn{sup 2+} atoms and thickness of seed bed are varied to analyze their effects on the resultant ZnO nanostructures. Vertically oriented hexagonal nanorods, multi-angular nanorods, hexagonal diskette and popcorn-like nanostructures are obtained by altering the experimental parameters. All the produced nanostructures were analysed by X-ray powder diffraction analysis and found to be grown in the (002) orientation of wurtzite ZnO. The texture co-efficient of ZnO layer was improved by combining a thick seed layer with higher cationic strength. Surface morphological studies reveal various nanostructures such as nanorods, diskettes and popcorn-like structures based on various preparation conditions. The optical property of the closest packed nanorods array was recorded by UV-VIS spectrometry, and the band gap value simulated from the results reflect the near characteristic band gap of ZnO. The surface roughness profile taken from the Atomic Force Microscopy reveals a roughness of less than 320 nm. (orig.)

  16. Infrared reflectance studies of hillock-like porous zinc oxide thin films

    International Nuclear Information System (INIS)

    Ching, C.G.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.

    2013-01-01

    We investigated the infrared (IR) reflectance characteristics of hillock-like porous zinc oxide (ZnO) thin films on silicon substrates. The IR reflectance spectra of the porous samples exhibited an extra resonance hump in the reststrahlen region of ZnO compared with the as-grown sample. Oscillation fringes with different behaviors were also observed in the non-reststrahlen region of ZnO. Standard multilayer optic technique was used with the effective medium theory to analyze the observations. Results showed that the porous ZnO layer consisted of several sublayers with different porosities and thicknesses. These findings were confirmed by scanning electron microscopy measurements. - Highlights: • Multilayer porous assumption qualitatively increased the overall spectra fitting. • IR reflectance is a sensitive method to probe the multilayer porous structure. • Hillock-like porous ZnO thin films fabricated using electrochemical etching method. • The thickness and porosity of the samples were determined. • Formation of extra resonance hump was due to splitting of reststrahlen band

  17. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of application type new structure thin film solar cells (Development of production technology of high efficiency hybrid thin films/sheet solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, (Kokoritsu hybrid gata hakumaku / sheet taiyodenchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of realizing low cost and high efficiency hybrid thin films/sheet solar cells, the R and D were carried out, and the FY 2000 results were reported. As to the formation technology of the upper cell, the following technologies were developed and the results contributory to the heightening of efficiency were obtained: technology for improvement of cell characteristics by gap widening of p layer, technology for optimization of formation conditions of i layer corresponding to the hybrid solar cell, technology for heightening of current by the intermediate ZnO layer just under the upper cell. Relating to the development of formation technology of high quality microcrystal thin films, it was indicated that the microcrystal silicon thin film had the conformity effective also for polycrystal silicon, and at the same time, the conversion efficiency of 12.8% and release voltage of 0.579V were obtained by the cell using the cast polycrystal board. In the thin film/polycrystal sheet hybrid solar cell in which all these technologies were integrated, the conversion efficiency of 12.0% was achieved, and the possibility was verified of achieving the target efficiency of 14% by further improvement of FF. (NEDO)

  18. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  19. Optical absorption enhancement by inserting ZnO optical spacer in plasmonic organic solar cells

    Science.gov (United States)

    N'Konou, Kekeli; Torchio, Philippe

    2018-01-01

    Optical absorption enhancement (AE) using coupled optical spacer and plasmonic effects in standard and inverted organic solar cells (OSCs) are demonstrated using the finite-difference time-domain numerical method. The influence of an added zinc oxide (ZnO) optical spacer layer inserted below the active layer in standard architecture is first theoretically investigated while the influence of varying the ZnO cathodic buffer layer thickness in inverted design is studied on AE. Then, the embedding of a square periodic array of core-shell silver-silica nanospheres (Ag@SiO2 NSs) at different positions in standard and inverted OSCs is performed while AE and short-circuit current density (Jsc) are calculated. As a result of previous combined effects, the optimized standard plasmonic OSCs present 15% and 79.45% enhancement in J over the reference with and without ZnO optical spacer layer, respectively, and a 16% increase of AE when Ag@SiO2 NSs are placed on top of the PEDOT:PSS layer. Compared to the inverted OSC reference, the plasmonic OSCs present 26% and 27% enhancement in J and AE, respectively, when the Ag@SiO2 NSs are located on top of the ZnO layer. Furthermore, the spatial position of these NSs in such OSCs is a key parameter for increasing light absorption via enhanced electromagnetic field distribution.

  20. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  1. Photoluminescence of spray pyrolysis deposited ZnO nanorods

    Directory of Open Access Journals (Sweden)

    Mikli Valdek

    2011-01-01

    Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

  2. OLED-based biosensing platform with ZnO nanoparticles for enzyme immobilization

    Science.gov (United States)

    Cai, Yuankun; Shinar, Ruth; Shinar, Joseph

    2009-08-01

    Organic light-emitting diode (OLED)-based sensing platforms are attractive for photoluminescence (PL)-based monitoring of a variety of analytes. Among the promising OLED attributes for sensing applications is the thin and flexible size and design of the OLED pixel array that is used for PL excitation. To generate a compact, fielddeployable sensor, other major sensor components, such as the sensing probe and the photodetector, in addition to the thin excitation source, should be compact. To this end, the OLED-based sensing platform was tested with composite thin biosensing films, where oxidase enzymes were immobilized on ZnO nanoparticles, rather than dissolved in solution, to generate a more compact device. The analytes tested, glucose, cholesterol, and lactate, were monitored by following their oxidation reactions in the presence of oxygen and their respective oxidase enzymes. During such reactions, oxygen is consumed and its residual concentration, which is determined by the initial concentration of the above-mentioned analytes, is monitored. The sensors utilized the oxygen-sensitive dye Pt octaethylporphyrin, embedded in polystyrene. The enzymes were sandwiched between two thin ZnO layers, an approach that was found to improve the stability of the sensing probes.

  3. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  4. Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films

    International Nuclear Information System (INIS)

    Fang, Hsin-Chiao; Huang, Jun-Han; Chu, Wen-Huei; Liu, Chuan-Pu

    2010-01-01

    Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga + fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 x 10 16 cm -2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H 2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 x 10 16 cm -2 , Ga + ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H 2 etching due to the higher electronegativity of Ga + towards oxygen. However, for the fluences ≥ 4.6 x 10 16 cm -2 , the surface particles are responsible for the etch stop and are identified as ZnGa 2 O 4 . We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

  5. Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

    2013-05-02

    The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

  6. Determination of Carrier Lifetimes in Organic-Inorganic Hybrid Solar Cells Based on Sb2S3 by Using the Time-Resolved Photocurrent

    Science.gov (United States)

    Jo, Hyun-Jun; Mun, Young Hee; Kim, Jong Su; Kim, Seung Hyun; Lee, Sang-Ju; Sung, Shi-Joon; Kim, Dae-Hwan

    2018-03-01

    This paper presents organic-inorganic hybrid solar cells (SCs) based on ZnO/Sb2S3/P3HT heterojunctions. The ZnO and the Sb2S3 layers were grown using atomic layer deposition (ALD). Although four cells were fabricated on one substrate by using the same process, their open-circuit voltages ( V OC ) and short-circuit current densities ( J SC ) were different. The SC with a high V OC has a low J SC . The causes of the changes in the V OC and the JSC were investigated by using photoluminescence (PL) spectroscopy and optically-biased time-resolved photocurrent (TRPC) measurements. The PL results at 300 K showed that the emission positions of the Sb2S3 layers in all cells were similar at approximately 1.71 eV. The carrier lifetime of the SCs was calculated from the TRPC results. The lifetime of cell 4 with the highest J SC decreased drastically with increasing intensity of the continuous-wave optical bias beam. Therefore, the defect states in the ZnO layer contribute to the J SC , but degrade the V OC .

  7. Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

    KAUST Repository

    Eita, Mohamed Samir

    2015-02-04

    The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room-temperature, solution-processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of H25 nm yields solar cell power-conversion effi ciencies (PCEs) of ≈6%, exceeding the effi ciency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60-300 ° C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL-deposited fi lms to solar cell performance. This protocol suggests a new fabrication method for solution-processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to fl exible devices printed on plastic substrates.

  8. Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Li Meng

    2015-01-01

    Full Text Available A Zn polar ZnMgO/MgO/ZnO structure with low Mg composition Zn1-xMgxO layer (x = 0.05 grown on a-plane (11–20 sapphire by radical-source laser molecular beam epitaxy was reported. The insertion of a thin (1 nm MgO layer between ZnMgO and ZnO layers in the ZnMgO/ZnO 2DEG structures results in an increase of 2DEG sheet density and affects electron mobility slightly. The carrier concentration reached a value as high as 1.1 × 1013 cm−2, which was confirmed by C-V measurements. A high Hall mobility of 3090 cm2/Vs at 10 K and 332 cm2/Vs at RT was observed from Zn0.95Mg0.05O/MgO/ZnO heterostructure. The choice of the thickness of MgO was discussed. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness was calculated in theory and the theoretical prediction and experimental results agreed well.

  9. The kinetic of photoreactions in zinc oxide microrods

    International Nuclear Information System (INIS)

    Fiedot, M; Rac, O; Suchorska-Woźniak, P; Nawrot, W; Teterycz, H

    2016-01-01

    Zinc oxide is the oldest sensing material used in the chemical resistive gas sensors which allow to detect many gases, such as carbon oxide, nitrogen oxides and other. This material is also widely used in medicine and daily life as antibacterial agent. For this reason this semiconductor is often synthesized on the polymer substrates such as foils and textiles. In presented results zinc oxide was deposited on the surface of poly(ethylene terephthalate) foil to obtain antibacterial material. As synthesis method chemical bath deposition was chosen. The growth of zinc oxide structures was carried out in water solution of zinc nitrate (V) and hexamethylenetetramine in 90°C during 9 h. Because antibacterial properties of ZnO are strongly depended on photocatalytic and electric properties of this semiconductor impedance spectroscopy measurements were carried out. During the measurements material was tested with and without UV light to determinate the kinetic of photoreactions in zinc oxide. Moreover the composite was analyzed by XRD diffraction and scanning electron microscope. The X-ray analysis indicated that obtained material has the structure of wurtzite which is typical of zinc oxide. SEM images showed that on the PET foil microrods of ZnO were formed. The impedance spectroscopy measurements of ZnO layer showed that in UV light significant changes in the conductivity of the material are observed

  10. Photoelectrochemical performance of DSSC with monodisperse and polydisperse ZnO SPs

    Energy Technology Data Exchange (ETDEWEB)

    Wahyuono, Ruri Agung, E-mail: r-agung-w@ep.its.ac.id; Risanti, Doty D., E-mail: r-agung-w@ep.its.ac.id [Department of Engineering Physics, Institut Teknologi Sepuluh Nopember (Indonesia); Shirosaki, Tomohiro; Nagaoka, Shoji [Kumamoto Industrial Research Institute (Japan); Takafuji, Makoto; Ihara, Hirotaka [Department of Applied Chemistry and Biochemistry, Kumamoto University (Japan)

    2014-02-24

    Zinc oxide, ZnO, is one of oxide semiconductors being used in DSSC. ZnO is promising material for having fairly higher energy band gap and much higher bulk electron mobility than that of anatase TiO{sub 2}, the most widely used semiconductor for DSSC photoelectrode. This study introduces the synthesis of ZnO by precipitation method. The synthesis involves ZnAc dihydrate and diethylene glycol (DEG) for the chemicals. Various size of ZnO spherical particles (SPs) are obtained in polydisperse and monodisperse particles. Monolayer and bilayer DSSCs are fabricated in sandwich structure and sensitized with N719 dye for 3 and 5 hours. Monolayer DSSC using monodisperse particles (422 nm) is able to generate highest conversion efficiency of 0.569% (V{sub oc} = 541.3 mV, J{sub sc} = 1.92 mA/cm{sup 2}, and fill factor of 54.78%). Bilayer DSSC, i.e. combined 422 - 185 nm ZnO layer, can optimize the photocurrent action spectra in UV regime leading to high conversion efficiency of 0.568 (V{sub oc} = 568.2 mV, J{sub sc} = 2.22 mA/cm{sup 2}, and fill factor of 47.25%). The longer sensitizing time does not always produce better conversion efficiency since it can induce the dissolution of Zn atoms and formation of Zn{sup 2+} - dye resisting the electron transport from dye to ZnO photoelectrode.

  11. Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu2O-absorber solar cell

    Directory of Open Access Journals (Sweden)

    Dimopoulos T.

    2014-07-01

    Full Text Available Heterojunction solar cells were fabricated by electrochemical deposition of p-type, cuprous oxide (Cu2O absorber on sputtered, n-type ZnO layer. X-ray diffraction measurements revealed that the as-deposited absorber consists mainly of Cu2O, but appreciable amounts of metallic Cu and cupric oxide (CuO are also present. These undesired oxidation states are incorporated during the deposition process and have a detrimental effect on the photovoltaic properties of the cells. The open circuit voltage (VOC, short circuit current density (jSC, fill factor (FF and power conversion efficiency (η of the as-deposited cells are 0.37 V, 3.71 mA/cm2, 35.7% and 0.49%, respectively, under AM1.5G illumination. We show that by thermal annealing in vacuum, at temperatures up to 300 °C, compositional purity of the Cu2O absorber could be obtained. A general improvement of the heterojunction and bulk materials quality is observed, reflected upon the smallest influence of the shunt and series resistance on the transport properties of the cells in dark and under illumination. Independent of the annealing temperature, transport is dominated by the space-charge layer generation-recombination current. After annealing at 300 °C the solar cell parameters could be significantly improved to the values of: VOC = 0.505 V, jSC = 4.67 mA/cm2, FF = 47.1% and η = 1.12%.

  12. Enhancement of Inverted Polymer Solar Cells Performances Using Cetyltrimethylammonium-Bromide Modified ZnO

    Directory of Open Access Journals (Sweden)

    Chung-Kai Wu

    2018-03-01

    Full Text Available In this study, the performance and stability of inverted bulk heterojunction (BHJ polymer solar cells (PSCs is enhanced by doping zinc oxide (ZnO with 0–6 wt % cetyltrimethylammonium bromide (CTAB in the sol-gel ZnO precursor solution. The power conversion efficiency (PCE of the optimized 3 wt % CTAB-doped ZnO PSCs was increased by 9.07%, compared to a PCE of 7.31% for the pristine ZnO device. The 0–6 wt % CTAB-doped ZnO surface roughness was reduced from 2.6 to 1 nm and the number of surface defects decreased. The X-ray photoelectron spectroscopy binding energies of Zn 2p3/2 (1021.92 eV and 2p1/2 (1044.99 eV shifted to 1022.83 and 1045.88 eV, respectively, which is related to strong chemical bonding via bromide ions (Br− that occupy oxygen vacancies in the ZnO lattice, improving the PCE of PSCs. The concentration of CTAB in ZnO significantly affected the work function of PSC devices; however, excessive CTAB increased the work function of the ZnO layer, resulting from the aggregation of CTAB molecules. In addition, after a 120-hour stability test in the atmosphere with 40% relative humidity, the inverted device based on CTAB-doped ZnO retained 92% of its original PCE and that based on pristine ZnO retained 68% of its original PCE. The obtained results demonstrate that the addition of CTAB into ZnO can dramatically influence the optical, electrical, and morphological properties of ZnO, enhancing the performance and stability of BHJ PSCs.

  13. Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

    Science.gov (United States)

    Bhaumik, Saikat; Pal, Amlan J

    2014-07-23

    We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

  14. Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

    Science.gov (United States)

    Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

    2009-04-22

    This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

  15. Enhancing the Durability and Carrier Selectivity of Perovskite Solar Cells Using a Blend Interlayer.

    Science.gov (United States)

    Sin, Dong Hun; Jo, Sae Byeok; Lee, Seung Goo; Ko, Hyomin; Kim, Min; Lee, Hansol; Cho, Kilwon

    2017-05-31

    A mechanically and thermally stable and electron-selective ZnO/CH 3 NH 3 PbI 3 interface is created via hybridization of a polar insulating polymer, poly(ethylene glycol) (PEG), into ZnO nanoparticles (NPs). PEG successfully passivates the oxygen defects on ZnO and prevents direct contact between CH 3 NH 3 PbI 3 and defects on ZnO. A uniform CH 3 NH 3 PbI 3 film is formed on a soft ZnO:PEG layer after dispersion of the residual stress from the volume expansion during CH 3 NH 3 PbI 3 conversion. PEG also increases the work of adhesion of the CH 3 NH 3 PbI 3 film on the ZnO:PEG layer and holds the CH 3 NH 3 PbI 3 film with hydrogen bonding. Furthermore, PEG tailors the interfacial electronic structure of ZnO, reducing the electron affinity of ZnO. As a result, a selective electron-collection cathode is formed with a reduced electron affinity and a deep-lying valence band of ZnO, which significantly enhances the carrier lifetime (473 μs) and photovoltaic performance (15.5%). The mechanically and electrically durable ZnO:PEG/CH 3 NH 3 PbI 3 interface maintains the sustainable performance of the solar cells over 1 year. A soft and durable cathodic interface via PEG hybridization in a ZnO layer is an effective strategy toward flexible electronics and commercialization of the perovskite solar cells.

  16. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

    International Nuclear Information System (INIS)

    Gorge, V.; Migan-Dubois, A.; Djebbour, Z.; Pantzas, K.; Gautier, S.; Moudakir, T.; Suresh, S.; Ougazzaden, A.

    2013-01-01

    Highlights: ► We have modeled a p–i–n InGaN-based solar cell with gradual bandgap layers. ► InGaN defects have been modeled by two band tails and one localized energy level. ► Energetic position and band tail widths have a low effect on device efficiency. ► The localized defect FWHM has a significant impact on performance. ► The efficiency drops radically when the defect density is higher than the P-doping. - Abstract: In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In 0.53 Ga 0.47 N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.

  17. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorge, V.; Migan-Dubois, A. [LGEP, UMR 8507, CNRS, SUPELEC, UPMC, Universite Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France); Djebbour, Z., E-mail: zakaria.djebbour@uvsq.fr [LGEP, UMR 8507, CNRS, SUPELEC, UPMC, Universite Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France); Department of Physics and Engineering Science, University of Versailles UVSQ, 45 Av. Des Etats Unis, 78035 Versailles (France); Pantzas, K. [Georgia Institute of Technology, GT-Lorraine, 2 rue Marconi, 57 070 Metz (France); UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); Gautier, S. [UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); LMOPS, UMR 7132, CNRS, University of Metz, Supelec, 2 rue E. Belin, 57 070 Metz (France); Moudakir, T.; Suresh, S. [UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France); Ougazzaden, A. [Georgia Institute of Technology, GT-Lorraine, 2 rue Marconi, 57 070 Metz (France); UMI 2958 Georgia Tech, CNRS, 2 rue Marconi, 57 070 Metz (France)

    2013-02-01

    Highlights: Black-Right-Pointing-Pointer We have modeled a p-i-n InGaN-based solar cell with gradual bandgap layers. Black-Right-Pointing-Pointer InGaN defects have been modeled by two band tails and one localized energy level. Black-Right-Pointing-Pointer Energetic position and band tail widths have a low effect on device efficiency. Black-Right-Pointing-Pointer The localized defect FWHM has a significant impact on performance. Black-Right-Pointing-Pointer The efficiency drops radically when the defect density is higher than the P-doping. - Abstract: In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In{sub 0.53}Ga{sub 0.47}N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells.

  18. Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence

    Science.gov (United States)

    Bouzourâa, M.-B.; Battie, Y.; Dalmasso, S.; Zaïbi, M.-A.; Oueslati, M.; En Naciri, A.

    2018-05-01

    We report the temperature dependence of the dielectric function, the exciton binding energy and the electronic transitions of crystallized ZnO thin film using spectroscopic ellipsometry (SE) and photoluminescence (PL). ZnO layers were prepared by sol-gel method and deposited on crystalline silicon (Si) by spin coating technique. The ZnO optical properties were determined between 300 K and 620 K. Rigorous study of optical responses was achieved in order to demonstrate the quenching exciton of ZnO as a function of temperature. Numerical technique named constrained cubic splines approximation (CCS), Tauc-Lorentz (TL) and Tanguy dispersion models were selected for the ellipsometry data modeling in order to obtain the dielectric function of ZnO. The results reveals that the exciton bound becomes widely flattening at 470 K on the one hand, and on the other that the Tanguy dispersion law is more appropriate for determining the optical responses of ZnO thin film in the temperature range of 300 K-420 K. The Tauc-Lorentz, for its part, reproduces correctly the ZnO dielectric function in 470 K-620 K temperature range. The temperature dependence of the electronic transition given by SE and PL shows that the exciton quenching was observed in 420 K-∼520 K temperature range. This quenching effect can be explained by the equilibrium between the Coulomb force of exciton and its kinetic energy in the film. The kinetic energy was found to induce three degrees of freedom of the exciton.

  19. Enhancement of Si solar cell efficiency using ZnO nanowires with various diameters

    Science.gov (United States)

    Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.; Mehrabi, M.

    2018-01-01

    Here, Zinc Oxide nanowires are synthesized using thermal chemical vapor deposition of a Zn granulate source and used to enhance a significant Si-solar cell efficiency with simple and low cost method. The nanowires are grown in various O2 flow rates. Those affect the shape, yield, structure and the quality of ZnO nanowires according to scanning electron microscopy and x-ray diffraction analyses. This delineates that the ZnO nanostructure is dependent on the synthesis conditions. The photoluminescence spectroscopy of ZnO indicates optical emission at the Ultra-Violet and blue-green regions whose intensity varies as a function of diameter of ZnO nano-wires. The optical property of ZnO layer is measured by UV-visible and diffuse reflection spectroscopy that demonstrate high absorbance at 280-550 nm. Furthermore, the photovoltaic characterization of ZnO nanowires is investigated based on the drop casting on Si-solar cell. The ZnO nanowires with various diameters demonstrate different effects on the efficiency of Si-solar cells. We have shown that the reduction of the spectral reflectance and down-shifting process as well as the reduction of photon trapping are essential parameters on the efficiency of Si-solar cells. However, the latter is dominated here. In fact, the trapped photons during the electron-hole generation are dominant due to lessening the absorption rate in ZnO nano-wires. The results indicate that the mean diameters reduction of ZnO nanowires is also essential to improve the fill factor. The external and internal quantum efficiency analyses attest the efficiency improvement over the blue region which is related to the key parameters above.

  20. Effect of mesh patterning with UV pulsed-laser on optical and electrical properties of ZnO/Ag-Ti thin films

    International Nuclear Information System (INIS)

    Kao, K.S.; Cheng, D.L.; Chang, S.H.; Hsieh, P.T.; Chin, H.S.; Lin, H.K.

    2010-01-01

    In this study, the ZnO/Ag-Ti structure for transparence conducting oxide (TCO) is investigated by optimizing the thickness of the Ag-Ti alloy and ZnO layers. The Ag-Ti thin film is deposited by DC magnetron sputtering and its thicknesses is well controlled. The ZnO thin film is prepared by sol-gel method using zinc acetate as cation source, 2-methoxiethanol as solvent and monoethanolamine as solution stabilizer. The ZnO film deposition is performed by spin-coating technique and dried at 150 deg. C on Corning 1737 glass. Due to the conductivity of ZnO/Ag-Ti is dominated by Ag-Ti, the sheet resistance of ZnO/Ag-Ti decrease dramatically as the thickness of Ag-Ti layer increases. However, the transmittances of ZnO/Ag-Ti become unacceptable for TCO application after the thickness of Ag-Ti layer beyond 6 nm. The as-deposited ZnO/Ag-Ti structure has the optical transmittance of 83% - 500 nm and the low resistivity of 1.2 x 10 -5 Ω-cm. Furthermore, for improving the optical and electrical properties of ZnO/Ag-Ti, the thermal treatment using laser is adopted. Experimental results indicate that the transmittance of ZnO/Ag-Ti is improved from 83% to 89% - 500 nm with resistivity of 1.02 x 10 -5 Ω-cm after laser drilling. The optical spectrum, the resistance, and the morphology of the ZnO/Ag-Ti will be reported in the study.

  1. Layer configurations comparison of bilayer-films for EGFET pH sensor application

    Science.gov (United States)

    Rahman, R. A.; Zulkefle, M. A.; Yusof, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2018-05-01

    The comparison between bilayer configurations were presented in this paper. TiO2 and ZnO layer configurations were manipulated in order to investigate which configuration produce highest sensing performance to be applied as EGFET pH sensor. Both of the materials were deposited together as the bilayer film. The configurations were manipulated between TiO2/ZnO and ZnO/TiO2. ITO was used as the substrate in this study and both of the materials were deposited by using sol-gel spin coating technique. After deposition process, these bilayer film then undergone for EGFET pH sensor measurement and physical characterization. The EGFET pH sensor measurement was done by dipping the fabricated bilayer film into three different pH values, which is pH4, pH7 and pH10. Bilayer film act as the pH-sensitive membrane, which connected to the commercial metal-oxide semiconductor FET (MOSFET). This MOSFET was connected to the interfacing circuit. Voltage output obtained were recorded and the graph was plotted by using the data recorded. Based on the EGFET pH sensor measurement, TiO2/ZnO bilayer film exhibit higher sensing performance, compared with ZnO/TiO2. TiO2/ZnO bilayer film produced 53.10 mV/pH with the linearity value of 0.9913. Afterwards, fabricated bilayer films then were characterized with AFM to explore their surface roughness and surface topography behavior.

  2. The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cells

    KAUST Repository

    Banavoth, Murali

    2015-08-13

    This report presents a new strategy for improving solar cell power conversion efficiencies (PCEs) through grain alignment and morphology control of the ZnO electron transport layer (ETL) prepared by radio frequency (RF) magnetron sputtering. The systematic control over the ETL\\'s grain alignment and thickness is shown, by varying the deposition pressure and operating substrate temperature during the deposition. Notably, a high PCE of 6.9%, short circuit current density (Jsc) of 12.8 mA cm-2, open circuit voltage (Voc) of 910 mV, and fill factor of 59% are demonstrated using the poly(benzo[1,2-b:4,5-b\\']dithiophene-thieno[3,4-c]pyrrole-4,6-dione):[6,6]-phenyl-C71-butyric acid methyl ester polymer blend with ETLs prepared at room temperature exhibiting oriented and aligned rod-like ZnO grains. Increasing the deposition temperature during the ZnO sputtering induces morphological cleavage of the rod-like ZnO grains and therefore reduced conductivity from 7.2 × 10-13 to ≈1.7 × 10-14 S m-1 and PCE from 6.9% to 4.28%. An investigation of the charge carrier dynamics by femtosecond (fs) transient absorption spectroscopy with broadband capability reveals clear evidence of faster carrier recombination for a ZnO layer deposited at higher temperature, which is consistent with the conductivity and device performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Use of ZnO as antireflective, protective, antibacterial, and biocompatible multifunction nanolayer of thermochromic VO2 nanofilm for intelligent windows

    International Nuclear Information System (INIS)

    Zhou, Huaijuan; Li, Jinhua; Bao, Shanhu; Li, Jian; Liu, Xuanyong; Jin, Ping

    2016-01-01

    Graphical abstract: - Highlights: • A multifunctional VO 2 /ZnO bilayer film is designed and deposited by magnetron sputtering apparatus. • The ZnO top layer can enhance the antireflective, antioxidative and anti-corrosion functions of the VO 2 film. • The ZnO top layer can endow VO 2 film with excellent antibacterial performance. • The ZnO top layer can attenuate the cytotoxicity of VO 2 thin film. - Abstract: A multifunctional VO 2 /ZnO bilayer film is designed and deposited by magnetron sputtering apparatus. The integration of the antireflective, antioxidative and anti-corrosion functions, and antibacterial performance makes the heterostructure film a promising candidate in the energy-saving smart window. The ZnO thin film as the antireflection layer can markedly boost the solar regulation efficiency (ΔT sol ) from 7.7% to 12.2% and possesses excellent luminous transmittance (T lum-L = 50.3%) in the low-temperature semiconductor phase. The ZnO layer as the protection barrier can not only protect VO 2 thin film from oxidation to much toxic V 2 O 5 , but also decrease the release of V ions. Besides, the synergistic effect of releasing killing by Zn 2+ ions and contact killing by ZnO NPs makes ZnO thin film an outstanding antibacterial coating. In terms of the biological safety, ZnO coating with appropriate film thickness can effectively attenuate the cytotoxicity of VO 2 on human HIBEpiC cells. We hope this work can provide new insights for better designing of novel multifunctional VO 2 -based intelligent energy-saving windows.

  4. Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

    International Nuclear Information System (INIS)

    Knoops, Harm C. M.; Loo, Bas W. H. van de; Smit, Sjoerd; Ponomarev, Mikhail V.; Weber, Jan-Willem; Sharma, Kashish; Kessels, Wilhelmus M. M.; Creatore, Mariadriana

    2015-01-01

    In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific frequency range

  5. Highly efficient inverted polymer solar cells based on a cross-linkable water-/alcohol-soluble conjugated polymer interlayer.

    Science.gov (United States)

    Zhang, Kai; Zhong, Chengmei; Liu, Shengjian; Mu, Cheng; Li, Zhengke; Yan, He; Huang, Fei; Cao, Yong

    2014-07-09

    A cross-linkable water/alcohol soluble conjugated polymer (WSCP) material poly[9,9-bis(6'-(N,N-diethylamino)propyl)-fluorene-alt-9,9-bis(3-ethyl(oxetane-3-ethyloxy)-hexyl) fluorene] (PFN-OX) was designed. The cross-linkable nature of PFN-OX is good for fabricating inverted polymer solar cells (PSCs) with well-defined interface and investigating the detailed working mechanism of high-efficiency inverted PSCs based on poly[4,8-bis(2-ethylhexyloxyl)benzo[1,2-b:4,5-b']dithio-phene-2,6-diyl-alt-ethylhexyl-3-fluorothithieno[3,4-b]thiophene-2-carboxylate-4,6-diyl] (PTB7) and (6,6)-phenyl-C71-butyric acid methyl ester (PC71BM) blend active layer. The detailed working mechanism of WSCP materials in high-efficiency PSCs were studied and can be summarized into the following three effects: a) PFN-OX tunes cathode work function to enhance open-circuit voltage (Voc); b) PFN-OX dopes PC71BM at interface to facilitate electron extraction; and c) PFN-OX extracts electrons and blocks holes to enhance fill factor (FF). On the basis of this understanding, the hole-blocking function of the PFN-OX interlayer was further improved with addition of a ZnO layer between ITO and PFN-OX, which led to inverted PSCs with a power conversion efficiency of 9.28% and fill factor high up to 74.4%.

  6. The Impact of Grain Alignment of the Electron Transporting Layer on the Performance of Inverted Bulk Heterojunction Solar Cells

    KAUST Repository

    Banavoth, Murali; El Labban, Abdulrahman; Eid, Jessica; Alarousu, Erkki; Shi, Dong; Zhang, Qiang; Zhang, Xixiang; Bakr, Osman; Mohammed, Omar F.

    2015-01-01

    This report presents a new strategy for improving solar cell power conversion efficiencies (PCEs) through grain alignment and morphology control of the ZnO electron transport layer (ETL) prepared by radio frequency (RF) magnetron sputtering. The systematic control over the ETL's grain alignment and thickness is shown, by varying the deposition pressure and operating substrate temperature during the deposition. Notably, a high PCE of 6.9%, short circuit current density (Jsc) of 12.8 mA cm-2, open circuit voltage (Voc) of 910 mV, and fill factor of 59% are demonstrated using the poly(benzo[1,2-b:4,5-b']dithiophene-thieno[3,4-c]pyrrole-4,6-dione):[6,6]-phenyl-C71-butyric acid methyl ester polymer blend with ETLs prepared at room temperature exhibiting oriented and aligned rod-like ZnO grains. Increasing the deposition temperature during the ZnO sputtering induces morphological cleavage of the rod-like ZnO grains and therefore reduced conductivity from 7.2 × 10-13 to ≈1.7 × 10-14 S m-1 and PCE from 6.9% to 4.28%. An investigation of the charge carrier dynamics by femtosecond (fs) transient absorption spectroscopy with broadband capability reveals clear evidence of faster carrier recombination for a ZnO layer deposited at higher temperature, which is consistent with the conductivity and device performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. UiO-66-NH2 Metal-Organic Framework (MOF) Nucleation on TiO2, ZnO, and Al2O3 Atomic Layer Deposition-Treated Polymer Fibers: Role of Metal Oxide on MOF Growth and Catalytic Hydrolysis of Chemical Warfare Agent Simulants.

    Science.gov (United States)

    Lee, Dennis T; Zhao, Junjie; Oldham, Christopher J; Peterson, Gregory W; Parsons, Gregory N

    2017-12-27

    Metal-organic frameworks (MOFs) chemically bound to polymeric microfibrous textiles show promising performance for many future applications. In particular, Zr-based UiO-66-family MOF-textiles have been shown to catalytically degrade highly toxic chemical warfare agents (CWAs), where favorable MOF/polymer bonding and adhesion are attained by placing a nanoscale metal-oxide layer on the polymer fiber preceding MOF growth. To date, however, the nucleation mechanism of Zr-based MOFs on different metal oxides and how product performance is affected are not well understood. Herein, we provide new insight into how different inorganic nucleation films (i.e., Al 2 O 3 , ZnO, or TiO 2 ) conformally coated on polypropylene (PP) nonwoven textiles via atomic layer deposition (ALD) influence the quality, overall surface area, and the fractional yield of UiO-66-NH 2 MOF crystals solvothermally grown on fiber substrates. Of the materials explored, we find that TiO 2 ALD layers lead to the most effective overall MOF/fiber adhesion, uniformity, and a rapid catalytic degradation rate for a CWA simulant, dimethyl p-nitrophenyl phosphate (DMNP) with t 1/2 = 15 min, 580-fold faster than the catalytic performance of untreated PP textiles. Interestingly, compared to ALD TiO 2 and Al 2 O 3 , ALD ZnO induces a larger MOF yield in solution and mass loading on PP fibrous mats. However, this larger MOF yield is ascribed to chemical instability of the ZnO layer under MOF formation condition, leading to Zn 2+ ions that promote further homogeneous MOF growth. Insights presented here improve understanding of compatibility between active MOF materials and substrate surfaces, which we believe will help advanced MOF composite materials for a variety of useful functions.

  8. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Science.gov (United States)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  9. Facile fabrication of core-shell Pr6O11-ZnO modified silane coatings for anti-corrosion applications

    Science.gov (United States)

    Jeeva Jothi, K.; Palanivelu, K.

    2014-01-01

    In this work, we have developed a facile and inexpensive method to fabricate anti-corrosive and hydrophobic surface with hierarchical micro and nano structures. We demonstrate for the first time the use of praseodymium oxide doped zinc oxide (Pr6O11-ZnO) nanocomposites loaded in a hybrid sol-gel (SiOx/ZrOx) layer, to effectively protect the underlying steel substrate from corrosion attack. The influence of Pr6O11-ZnO gives the surprising aspects based on active anti-corrosion and hydrophobic coatings. The spherical SiO2 particles have been successfully coated with Pr6O11-ZnO layer through sol-gel process. The resulted SiO2@Pr6O11-ZnO core-shell was characterized by Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), and X-ray Photoelectron Spectroscopy (XPS). The barrier properties of the intact coatings were assessed by Electrochemical Impedance Spectroscopy (EIS). The fabrication of SiO2@Pr6O11-ZnO shows dual properties of hydrophobic and anti-corrosion micro/nanostructured sol-gel coatings follows a single/simple step coating procedure. This study has led to a better understanding factor influencing the anti-corrosion performance with embedded nanocomposites. These developments are particularly for silane network@ Pr6O11-ZnO for self-healing and self-cleaning behavior which can be designed for new protective coating system.

  10. Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

    International Nuclear Information System (INIS)

    Zafar, Muhammad; Yun, Ju-Young; Kim, Do-Heyoung

    2017-01-01

    Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

  11. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  12. Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zafar, Muhammad [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of); Yun, Ju-Young [Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 305-600 (Korea, Republic of); Kim, Do-Heyoung, E-mail: kdhh@chonnam.ac.kr [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of)

    2017-03-15

    Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

  13. Superhydrophobic ZnAl double hydroxide nanostructures and ZnO films on Al and glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    De, Debasis, E-mail: debasis.de@bcrec.ac.in [Electronics and Instrumentation Engineering Department, Dr. B C Roy Engineering College, Durgapur, West Bengal 713206 (India); Sarkar, D.K. [Centre Universitaire de Recherche sur l' Aluminium (CURAL), L' Université du Québec à Chicoutimi, 555 Blvd. Université, Chicoutimi, Saguenay, Québec G7H 2B1 (Canada)

    2017-01-01

    Superhydrophobic nanostructured ZnAl: layered double hydroxides (LDHs) and ZnO films have been fabricated on Al and glass substrates, respectively, by a simple and cost effective chemical bath deposition technique. Randomly oriented hexagonal patterned of ZnAl: LDHs thin nanoplates are clearly observed on Al-substrate in the scanning electron microscopic images. The average size of these hexagonal plates is ∼4 μm side and ∼30 nm of thickness. While on the glass substrate, a oriented hexagonal patterned ZnO nanorods (height ∼5 μm and 1 μm diameter) are observed and each rod is further decorated throughout the top few nanometers with several nanosteps. At the top of the nanorod, a perfectly hexagonal patterned ZnO surface with ∼250 nm sides is observed. The tendency to form hexagonal morphological features is due to the hexagonal crystal structure of ZnO confirmed from X-ray diffraction patterns and transmission electron microscopy image. The ZnAl: LDHs and/or ZnO coated substrates have been passivated by using stearic acid (SA) molecules. Infrared spectra of passivated ZnAl: LDHs coated substrates confirm the presence of SA. X-ray diffraction pattern also corroborates the results of infrared spectrum. The contact angle of the as prepared samples is zero. The superhydrophobicity is achieved by observing contact angle of ∼161° with a hysteresis of ∼4° for Al-substrate. On the glass substrate, a higher contact angle of ∼168° with a lower hysteresis of ∼3° is observed. A lower surface roughness of ∼4.93 μm is measured on ZnAl: LDHs surface layer on the Al substrate as compare to a higher surface roughness of 6.87 μm measured on ZnO layer on glass substrate. The superhydrophobicity of passivated nanostructured films on two different substrates is observed due to high surface roughness and low surface energy. - Highlights: • ZnAl: layered double hydroxides (LDHs) nanoplates are fabricated on Al substrate. • ZnO nanorods are fabricated on glass substrate. • ZnAl: LDHs and ZnO are characterized using XRD, SEM and FTIR. • Superhydrophobicity is achieved by passivating the substrates using stearic acid. • Water contact angle of ZnAl: LDHs or ZnO coated substrate is > 160°.

  14. Unraveling the resistive switching effect in ZnO/0.5Ba(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}-0.5(Ba{sub 0.7}Ca{sub 0.3})TiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Silva, J.P.B., E-mail: josesilva@fisica.uminho.pt [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Vorokhta, M.; Dvořák, F. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Sekhar, K.C. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 610 101 (India); Matolín, V. [Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V Holešovičkách 2, 18000 Prague 8 (Czech Republic); Moreira, J. Agostinho [IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); Pereira, M.; Gomes, M.J.M. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2017-04-01

    Highlights: • ZnO/0.5BZT-0.5BCT heterostructures exhibited resistive switching (RS) ratio ≥ 10 4. • Effect of oxygen pressure used in the deposition of ZnO on RS ratio is highlighted. • Determination of the Band alignment in ZnO/0.5BZT-0.5BCT heterojunctions from XPS. • Resistive Switching is explained based on charge coupling effect. - Abstract: This work reports the effect of partial oxygen pressure, used in the deposition of the ZnO layer, on the band alignment at ZnO – 0.5Ba(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}-0.5(Ba{sub 0.7}Ca{sub 0.3})TiO{sub 3} (0.5BZT-0.5BCT) interface and on the resistive switching (RS) behavior of pulsed laser deposited ZnO/0.5BZT-0.5BCT heterostructures. X-ray photoelectron spectroscopy (XPS) has been employed to measure the valence band offset and the conduction band offset of the ZnO/0.5BZT-0.5BCT heterojunctions. The valence and conduction band offsets of the ZnO/0.5BZT-0.5BCT heterostucture with ZnO deposited at 10{sup −2} mbar of partial oxygen pressure were found to be 0.27 and 0.80 eV, respectively. The RS effect in heterostructures is explained on the base of the charge coupling between the switchable polarization of ferroelectric layer and the non-switchable polarization of semiconductor layer. The heterostructure with ZnO deposited at 10{sup −2} mbar of partial oxygen pressure displays optimum RS characteristics, with a switching ratio ≥ 10{sup 4} and excellent retention and endurance characteristics. The optimum RS characteristics are attributed to a good interface quality with enough carrier concentration in ZnO, as evidenced by XPS.

  15. The new oxide paradigm for solid state ultraviolet photodetectors

    Science.gov (United States)

    Rogers, D. J.; Bove, P.; Arrateig, X.; Sandana, V. E.; Teherani, F. H.; Razeghi, M.; McClintock, R.; Frisch, E.; Harel, S.

    2018-03-01

    The bandgap of wurzite ZnO layers grown on 2 inch diameter c-Al2O3 substrates by pulsed laser deposition was engineered from 3.7 to 4.8 eV by alloying with Mg. Above this Mg content the layers transformed from single phase hcp to mixed hcp/fcc phase before becoming single phase fcc above a bandgap of about 5.5 eV. Metal-Semiconductor-Metal (MSM) photodetectors based on gold Inter-Digitated-Transducer structures were fabricated from the single phase hcp layers by single step negative photolithography and then packaged in TO5 cans. The devices gave over 6 orders of magnitude of separation between dark and light signal with solar rejection ratios (I270 : I350) of over 3 × 105 and dark signals of 300 pA (at a bias of -5V). Spectral responsivities were engineered to fit the "Deutscher Verein des Gas- und Wasserfaches" industry standard form and gave over two decade higher responsivities (14 A/W, peaked at 270 nm) than commercial SiC based devices. Homogeneous Ga2O3 layers were also grown on 2 inch diameter c-Al2O3 substrates by PLD. Optical transmission spectra were coherent with a bandgap that increased from 4.9 to 5.4 eV when film thickness was decreased from 825 to 145 nm. X-ray diffraction revealed that the films were of the β-Ga2O3 (monoclinic) polytype with strong (-201) orientation. β-Ga2O3 MSM photodetectors gave over 4 orders of magnitude of separation between dark and light signal (at -5V bias) with dark currents of 250 pA and spectral responsivities of up to 40 A/W (at -0.75V bias). It was found that the spectral responsivity peak position could be decreased from 250 to 230 nm by reducing film thickness from 825 to 145 nm. This shift in peak responsivity wavelength with film thickness (a) was coherent with the apparent bandgap shift that was observed in transmission spectroscopy for the same layers and (b) conveniently provides a coverage of the spectral region in which MgZnO layers show fcc/hcp phase mixing.

  16. Observation of defects evolution in electronic materials

    Science.gov (United States)

    Jang, Jung Hun

    Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2 annealing, ion-implantation, and thermal oxidation. Advanced characterization techniques have been used to obtain information about strain, relaxation, layer thickness, elemental composition, defects, surface/interface morphology changes and so on. Based on the understanding of defects behavior during the strain relaxation after post thermal processes, a new manufacturing process to obtain highly-relaxed and thin Si1-xGex layers, which could be used as virtual substrates for strained-Si applications, was found.

  17. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

    2017-08-31

    Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  18. Band alignment and charge transfer predictions of ZnO/ZnX (X = S, Se or Te) interfaces applied to solar cells: a PBE+U theoretical study.

    Science.gov (United States)

    Flores, Efracio Mamani; Gouvea, Rogério Almeida; Piotrowski, Maurício Jeomar; Moreira, Mário Lucio

    2018-02-14

    The engineering of semiconductor materials for the development of solar cells is of great importance today. Two topics are considered to be of critical importance for the efficiency of Grätzel-type solar cells, the efficiency of charge separation and the efficiency of charge carrier transfer. Thus, one research focus is the combination of semiconductor materials with the aim of reducing charge recombination, which occurs by spatial charge separation. From an experimental point of view, the combining of materials can be achieved by decorating a core with a shell of another material resulting in a core-shell system, which allows control of the desired photoelectronic properties. In this context, a computational simulation is mandatory for the atomistic understanding of possible semiconductor combinations and for the prediction of their properties. Considering the construction of ZnO/ZnX (X = S, Se or Te) interfaces, we seek to investigate the electronic influence of the shell (ZnX) on the core (ZnO) and, consequently, find out which of the interfaces would present the appropriate properties for (Grätzel-type) solar cell applications. To perform this study, we have employed density functional theory (DFT) calculations, considering the Perdew-Burke-Ernzerhof (PBE) functional. However, it is well-known that plain DFT fails to describe strong electronic correlated materials where, in general, an underestimation of the band gap is obtained. Thus, to obtain the correct description of the electronic properties, a Hubbard correction was employed, i.e. PBE+U calculations. The PBE+U methodology provided the correct electronic structure properties for bulk ZnO in good agreement with experimental values (99.4%). The ZnO/ZnX interfaces were built and were composed of six ZnO layers and two ZnX layers, which represents the decoration process. The core-shell band gap was 2.2 eV for ZnO/ZnS, ∼1.71 eV for ZnO/ZnSe and ∼0.95 eV for ZnO/ZnTe, which also exhibited a type-II band alignment. Bader charge analysis showed an accumulation of charges in the 6th layer of ZnO for the three ZnO/ZnX interfaces. On the basis of these results, we have proposed that ZnO/ZnS and ZnO/ZnSe core-shell structures can be applied as good candidates (with better efficiency) for photovoltaic devices.

  19. Water-assisted nitrogen mediated crystallisation of ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Muydinov, R. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany); Steigert, A. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Schönau, S.; Ruske, F. [Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany); Kraehnert, R.; Eckhardt, B. [Technical University Berlin, Institute of Technical Chemistry, Straße des 17. Juni 124, 10623 Berlin (Germany); Lauermann, I. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Szyszka, B. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany)

    2015-09-01

    Nitrogen mediated crystallisation (NMC) being performed in oxygen atmosphere at T ≥ 600 °C is an effective approach to obtain very well (00l)-textured ZnO films. A use of NMC-seed layers remarkably improves electrical transport properties of subsequently deposited ZnO:Al contacts. In this work, crystallisation of quasi-amorphous, nitrogen doped ZnO seed layers has been performed using water vapours at overpressure and temperatures around 100 °C. This approach allows employment of soda-lime float-glass or temperature sensitive film stacks as a substrate. We propose here possible mechanism of water-assisted NMC and grope for optimised crystallisation conditions on the basis of optical, microscopic, and textural investigation. Low temperature water-assisted crystallisation of 20 nm thick ZnO layers was compared with high temperature annealing methods in terms of composition, microstructure and crystallinity. Electrical properties such as electron Hall mobility (μ{sub e}), concentration of free electrons (N{sub e}) and sheet resistance (R{sub sh}) have been evaluated and compared for functional ZnO:Al films obtained on glass and on differently crystallised NMC-seed layers. It was found that the crystallised with water assistance at low temperature ZnO seed layers provide comparable improvement in crystallinity and electrical properties of subsequently grown functional ZnO:Al films with respect to the ones crystallised at high temperature. Use of optimised water-assisted crystallisation of seed layers has allowed decreasing R{sub sh} of thin (130–270 nm) functional ZnO:Al films twice compared to the glass substrate. Both provide this effect: increase in μ{sub e} and increase of N{sub e}. - Highlights: • Amorphous ZnO:N films can be crystallised in autoclave at temperatures around 100 °C. • Such water-assisted crystallisation provides well-crystalline ZnO seed layers. • Use of these seed layers resulted in stress-free ZnO:Al contacts with twice lower R{sub sh}.

  20. Optimization of Electrochemically Deposited Highly Doped ZnO Bilayers on Ga-Rich Chalcopyrite Selenide for Cost-Effective Photovoltaic Device Technology

    Directory of Open Access Journals (Sweden)

    Dimitra N. Papadimitriou

    2016-11-01

    Full Text Available High quality polycrystalline bilayers of aluminium doped ZnO (Al:ZnO were successively electrodeposited in the form of columnar structures preferentially oriented along the ( 10 1 ¯ 1 crystallographic direction from aqueous solution of zinc nitrate (Zn(NO32 at negative electrochemical potential of EC = (−0.8–(−1.2 V and moderate temperature of 80 °C on gallium rich (30% Ga chalcopyrite selenide Cu(In,GaSe2 (CIGS with chemically deposited ZnSe buffer (ZnSe/Cu(In,GaSe2/Mo/glass. The aluminium doped ZnO layer properties have initially been probed by deposition of Al:ZnO/i-ZnO bilayers directly on Mo/glass substrates. The band-gap energy of the Al:ZnO/i-ZnO reference layers was found to vary from 3.2 to 3.7 eV by varying the AlCl3 solute dopant concentration from 1 to 20 mM. The electrical resistivity of indium-pellet contacted highly doped Al:ZnO sheet of In/Al:ZnO/i-ZnO/Mo/glass reference samples was of the order ρ ~10−5 Ω·cm; the respective carrier concentration of the order 1022 cm−3 is commensurate with that of sputtered Al:ZnO layers. For crystal quality optimization of the bilayers by maintenance of the volatile selenium content of the chalcopyrite, they were subjected to 2-step annealing under successive temperature raise and N2 flux regulation. The hydrostatic compressive strain due to Al3+ incorporation in the ZnO lattice of bilayers processed successively with 5 and 12 mM AlCl3 dopant was εh = −0.046 and the respective stress σh = −20 GPa. The surface reflectivity of maximum 5% over the scanned region of 180–900 nm and the (optical band gap of Eg = 3.67 eV were indicative of the high optical quality of the electrochemically deposited (ECD Al:ZnO bilayers.

  1. Comparative study about Al-doped zinc oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu(In,Ga)Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pattini, F., E-mail: pattini@imem.cnr.it [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Annoni, F.; Bissoli, F.; Bronzoni, M. [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Garcia, J.P. [Delft University of Technology, Faculty of Applied Sciences, Delft Product and Process Design Institute, Julianalaan 67, 2628 BC Delft (Netherlands); Gilioli, E.; Rampino, S. [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy)

    2015-05-01

    In this study, a comparison between Al-doped ZnO (AZO) as Transparent Conductive Oxide for Cu(In,Ga)Se{sub 2}-based solar cells grown by Pulsed Electron Deposition (PED) and Radio Frequency Magnetron Sputtering (RFMS) was performed. PED yielded polycrystalline [002] mono-oriented thin films with low electrical resistivity and high optical transparency with heater temperatures ranging from room temperature (RT) to 250 °C. The electrical resistivity of these films can be tuned by varying the heater temperature, reaching a minimum value of 3.5 × 10{sup −4} Ωcm at 150 °C and an average transmittance over 90% in the visible range. An AZO film grown at RT was deposited by PED on an actual Cu(In,Ga)Se{sub 2}-based solar cell, resulting to an efficiency value of 15.2% on the best device. This result clearly shows that PED is a suitable technique for growing ZnO-based thin films for devices/applications where low deposition temperature is required. On the other hand, an optimized AZO thin film front contact for thin film solar cells was studied and fabricated via RFMS. The parameters of this technique were tweaked to obtain highly conductive and transparent AZO thin films. The lowest resistivity value of 3.7 × 10{sup −4} Ωcm and an average transmittance of 86% in the 400-1100 nm wavelength range was obtained with a heater temperature of 250 °C. A thick sputtered AZO film was deposited at RT onto an identical cell used for PED-grown AZO, reaching the highest conversion efficiency value of 14.7%. In both cases, neither antireflection coatings nor pure ZnO layer was used. - Highlights: • Pulsed Electron Deposition (PED) lets high quality films grow at low temperature. • Al:ZnO (AZO) thin films grown by PED present high optical and electrical quality. • AZO electrical resistivity can be tuned from 10{sup −4} to 10{sup −2} Ωcm in proper condition. • Cu(In,Ga)Se{sub 2}-based simplified solar cells achieved efficiency of 15.2% for PED-grown AZO.

  2. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    International Nuclear Information System (INIS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-01-01

    Highlights: • Al nano-concave arrays with different interpore distance (D c ) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al 2 O 3 spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D c and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D c ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D c ) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al 2 O 3 spacer was placed between the textured Al and the ZnO films (the Al/Al 2 O 3 -ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D c = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ (0,1) SPP resonance mode. In the Al/Al 2 O 3 -ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ (0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ (0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al 2 O 3 -ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  3. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    Energy Technology Data Exchange (ETDEWEB)

    Norek, Małgorzata, E-mail: mnorek@wat.edu.pl [Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); Łuka, Grzegorz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Włodarski, Maksymilian [Institute of Optoelectronics, Military University of Technology, Str. Kaliskiego 2, 00-908 Warszawa (Poland)

    2016-10-30

    Highlights: • Al nano-concave arrays with different interpore distance (D{sub c}) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al{sub 2}O{sub 3} spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D{sub c} and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D{sub c} ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D{sub c}) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al{sub 2}O{sub 3} spacer was placed between the textured Al and the ZnO films (the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D{sub c} = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ{sub (0,1)} SPP resonance mode. In the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ{sub (0,1)} plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ{sub (0,1)} SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al{sub 2}O{sub 3}-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  4. MOVPE growth and characterisation of ZnO properties for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Oleynik, N.

    2007-03-07

    In this work a new Metalorganic Vapor Phase Epitaxy (MOVPE) method was developed for the growth and doping of high-quality ZnO films. ZnO is a unique optoelectronic material for the effective light generation in the green to the UV spectral range. Optoelectronic applications of ZnO require impurity-free monocrystalline films with smooth surfaces and low concentration of the defects in the crystal lattice. At the beginning of this work only few reports on MOVPE growth of polycrystalline ZnO existed. The low quality of ZnO is attributed to the lack of an epitaxially matched substrate, and gas-phase prereactions between the Zn- and O-precursors. To achieve control over the ZnO quality, several O-precursors were tested for the growth on GaN/Si(111) or GaN/Sapphire substrates at different reactor temperatures and pressures. ZnO layers with XRD rocking curve FWHMs of the (0002) reflection of 180'' and narrow cathodoluminescence of 1.3 meV of the dominant I{sub 8} emission were synthesized using a two-step growth procedure. In this procedure, ZnO is homoepitaxially grown at high temperature using N{sub 2}O as O-precursor on a low temperature grown ZnO buffer layer using tertiary-butanol as O-precursor. p-Type doping of ZnO, which usually exhibits n-type behaviour, is very difficult. This doping asymmetry represents an issue for ZnO-based devices. Beginning from 1992, a growing number of reports have been claiming a fabrication of p-type ZnO, but, due to the missing reproducibilty, they are still questionable. Native defects, non-stoichiometry, and hydrogen are sources of n-type conductivity of ZnO. Together with a low solubility of the potential p-type dopants and deep position of impurity levels, these factors partly explain p-type doping difficulties in ZnO. However, there is no fully described mechanism of the ZnO doping asymmetry yet. In this work, NH{sub 3}, unsymmetrical dimethylhydrazine (UDMHy), diisobutylamine, and NO nitrogen precursors were studied for p-type doping of ZnO. Some NH{sub 3}- and UDMHy-doped samples have shown a reduction in the electron concentration after post-growth rapid thermal annealing, but no reliable p-type conductivity was observed. The use of the NO precursor results in very smooth layers with a strong drop in growth rate. However, it does not influence the optical and electrical properties of the ZnO. Diisobutylamine deteriorates the properties of ZnO and does not lead to nitrogen incorporation. A brownish color of the samples is observed when using NH{sub 3} or UDMHy. From the strong reduction in the carrier concentration about one order of magnitude lower than the background doping concentration, and the behavior of the DAP luminescence, it is concluded that nitrogen as an acceptor can be successfully introduced in ZnO using UDMHy. (orig.)

  5. Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

    Science.gov (United States)

    Edley, Michael

    Photovoltaic energy is a clean and renewable source of electricity; however, it faces resistance to widespread use due to cost. Nanostructuring decouples constraints related to light absorption and charge separation, potentially reducing cost by allowing a wider variety of processing techniques and materials to be used. However, the large interfacial areas also cause an increased dark current which negatively affects cell efficiency. This work focuses on extremely thin absorber (ETA) solar cells that used a ZnO nanowire array as a scaffold for an extremely thin CdSe absorber layer. Photoexcited electrons generated in the CdSe absorber are transferred to the ZnO layer, while photogenerated holes are transferred to the liquid electrolyte. The transfer of photoexcited carriers to their transport layer competes with bulk recombination in the absorber layer. After charge separation, transport of charge carriers to their respective contacts must occur faster than interfacial recombination for efficient collection. Charge separation and collection depend sensitively on the dimensions of the materials as well as their interfaces. We demonstrated that an optimal absorber thickness can balance light absorption and charge separation. By treating the ZnO/CdSe interface with a CdS buffer layer, we were able to improve the Voc and fill factor, increasing the ETA cell's efficiency from 0.53% to 1.34%, which is higher than that achievable using planar films of the same material. We have gained additional insight into designing ETA cells through the use of dynamic measurements. Ultrafast transient absorption spectroscopy revealed that characteristic times for electron injection from CdSe to ZnO are less than 1 ps. Electron injection is rapid compared to the 2 ns bulk lifetime in CdSe. Optoelectronic measurements such as transient photocurrent/photovoltage and electrochemical impedance spectroscopy were applied to study the processes of charge transport and interfacial recombination. With these techniques, the extension of the depletion layer from CdSe into ZnO was determined to be vital to suppression of interfacial recombination. However, depletion of the ZnO also restricted the effective diffusion core for electrons and slowed their transport. Thus, materials and geometries should be chosen to allow for a depletion layer that suppresses interfacial recombination without impeding electron transport to the point that it is detrimental to cell performance. Thin film solar cells are another promising technology that can reduce costs by relaxing material processing requirements. CuInxGa (1-x)Se (CIGS) is a well studied thin film solar cell material that has achieved good efficiencies of 22.6%. However, use of rare elements raise concerns over the use of CIGS for global power production. CuSbS2 shares chemistry with CuInSe2 and also presents desirable properties for thin film absorbers such as optimal band gap (1.5 eV), high absorption coefficient, and Earth-abundant and non-toxic elements. Despite the promise of CuSbS2, direct characterization of the material for solar cell application is scarce in the literature. CuSbS2 nanoplates were synthesized by a colloidal hot-injection method at 220 °C in oleylamine. The CuSbS2 platelets synthesized for 30 minutes had dimensions of 300 nm by 400 nm with a thickness of 50 nm and were capped with the insulating oleylamine synthesis ligand. The oleylamine synthesis ligand provides control over nanocrystal growth but is detrimental to intercrystal charge transport that is necessary for optoelectronic device applications. Solid-state and solution phase ligand exchange of oleylamine with S2- were used to fabricate mesoporous films of CuSbS2 nanoplates for application in solar cells. Exchange of the synthesis ligand with S2- resulted in a two order of magnitude increase in 4-point probe conductivity. Photoexcited carrier lifetimes of 1.4 ns were measured by time-resolved terahertz spectroscopy, indicating potential for CuSbS2 as a solar cell absorber material.