Double-layered ZnO nanostructures for efficient perovskite solar cells

KAUST Repository

Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

2014-01-01

To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

Science.gov (United States)

Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

2018-04-01

A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

Sparking deposited ZnO nanoparticles as double-layered photoelectrode in ZnO dye-sensitized solar cell

Energy Technology Data Exchange (ETDEWEB)

Hongsith, Kritsada [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand); Hongsith, Niyom [Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand); School of Science, University of Phayao, Phayao 56000 (Thailand); Wongratanaphisan, Duangmanee; Gardchareon, Atcharawon; Phadungdhitidhada, Surachet [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand); Singjai, Pisith [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Choopun, Supab, E-mail: supab99@gmail.com [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand)

2013-07-31

The semiconducting layers of ZnO nanoparticles (ZN), ZnO powder (ZP) and ZnO nanopowder (ZNP) were designed and fabricated for double-layered semiconducting photoelectrode in dye-sensitized solar cells (DSSCs). The under-layer was ZN, which was prepared by simple and cost-effective sparking technique onto F-doped tin oxide (FTO) glass substrate and its thickness was controlled by number of sparking cycles for 0, 10, 25, 50 and 100 rounds under atmospheric pressure. Then, ZP or ZNP was screened on to ZN to form double-layered photoelectrode. Here, the DSSC structures were FTO/double-layered ZnO/Eosin Y/electrolyte/Pt counterelectrode. The best results of DSSCs were observed with J{sub sc} of 4.71 mA/cm{sup 2} and 5.56 mA/cm{sup 2} and photoconversion efficiency of 1.11% and 1.14% at 50 sparking cycles for ZP and ZNP over-layers, respectively. The efficiency enhancement can be explained by combination effects of electron and light scattering. Moreover, the modified equation of short circuit current density was developed and effectively used to explain the efficiency enhancement. - Highlights: • Effect of under-layer thickness is investigated. • Simple and cost-effective sparking technique is used for ZnO nanoparticles. • Efficiency enhancement can be explained by both electron and light scattering. • Modified equation of short circuit current density was developed for enhancement.

Sparking deposited ZnO nanoparticles as double-layered photoelectrode in ZnO dye-sensitized solar cell

International Nuclear Information System (INIS)

Hongsith, Kritsada; Hongsith, Niyom; Wongratanaphisan, Duangmanee; Gardchareon, Atcharawon; Phadungdhitidhada, Surachet; Singjai, Pisith; Choopun, Supab

2013-01-01

The semiconducting layers of ZnO nanoparticles (ZN), ZnO powder (ZP) and ZnO nanopowder (ZNP) were designed and fabricated for double-layered semiconducting photoelectrode in dye-sensitized solar cells (DSSCs). The under-layer was ZN, which was prepared by simple and cost-effective sparking technique onto F-doped tin oxide (FTO) glass substrate and its thickness was controlled by number of sparking cycles for 0, 10, 25, 50 and 100 rounds under atmospheric pressure. Then, ZP or ZNP was screened on to ZN to form double-layered photoelectrode. Here, the DSSC structures were FTO/double-layered ZnO/Eosin Y/electrolyte/Pt counterelectrode. The best results of DSSCs were observed with J sc of 4.71 mA/cm 2 and 5.56 mA/cm 2 and photoconversion efficiency of 1.11% and 1.14% at 50 sparking cycles for ZP and ZNP over-layers, respectively. The efficiency enhancement can be explained by combination effects of electron and light scattering. Moreover, the modified equation of short circuit current density was developed and effectively used to explain the efficiency enhancement. - Highlights: • Effect of under-layer thickness is investigated. • Simple and cost-effective sparking technique is used for ZnO nanoparticles. • Efficiency enhancement can be explained by both electron and light scattering. • Modified equation of short circuit current density was developed for enhancement

Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

Science.gov (United States)

Seo, Youngmi; Kim, Jung Hyeun

2011-06-01

Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

Electrical properties of ZnO nanorods and layers

Energy Technology Data Exchange (ETDEWEB)

Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

2007-07-01

ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

Energy Technology Data Exchange (ETDEWEB)

Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2013-07-15

ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

Science.gov (United States)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

Science.gov (United States)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

Directory of Open Access Journals (Sweden)

Shao-Ying Ting

2012-01-01

Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Jiang Chunhua

2009-01-01

Full Text Available Abstract This paper reports the effects of the seed layers prepared by spin-coating and dip-coating methods on the morphology and density of ZnO nanowire arrays, thus on the performance of ZnO nanowire-based dye-sensitized solar cells (DSSCs. The nanowire films with the thick ZnO buffer layer (~0.8–1 μm thick can improve the open circuit voltage of the DSSCs through suppressing carrier recombination, however, and cause the decrease of dye loading absorbed on ZnO nanowires. In order to further investigate the effect of TiO2buffer layer on the performance of ZnO nanowire-based DSSCs, compared with the ZnO nanowire-based DSSCs without a compact TiO2buffer layer, the photovoltaic conversion efficiency and open circuit voltage of the ZnO DSSCs with the compact TiO2layer (~50 nm thick were improved by 3.9–12.5 and 2.4–41.7%, respectively. This can be attributed to the introduction of the compact TiO2layer prepared by sputtering method, which effectively suppressed carrier recombination occurring across both the film–electrolyte interface and the substrate–electrolyte interface.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

Science.gov (United States)

Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

2013-08-19

Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Zafar Hussain Ibupoto

2013-08-01

Full Text Available Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD and field emission scanning electron microscopy (FESEM techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002 peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

Study of a low power plasma reactor for the synthesis of zinc oxide as window layers in Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Ma, Alexandre, E-mail: alexadre.ma@chimie-paristech.fr [Institut de Recherche de Chimie Paris (IRCP), Equipe 2PM (Procédés, Plasmas, Microsystèmes), UMR 8247, Chimie ParisTech-CNRS, 11 Rue Pierre et Marie Curie, 75005 Paris (France); Institute of Research and Development of Photovoltaic Energy (IRDEP), UMR7174, EDF-CNRS-Chimie ParisTech, 6 Quai Watier, 78401 Chatou (France); ADEME (French Environment and Energy Management Agency), 20 avenue du Grésillé, BP 90406, 49004 Angers Cedex 01 (France); Donsanti, Frédérique [Institute of Research and Development of Photovoltaic Energy (IRDEP), UMR7174, EDF-CNRS-Chimie ParisTech, 6 Quai Watier, 78401 Chatou (France); Rousseau, Frédéric; Morvan, Daniel [Institut de Recherche de Chimie Paris (IRCP), Equipe 2PM (Procédés, Plasmas, Microsystèmes), UMR 8247, Chimie ParisTech-CNRS, 11 Rue Pierre et Marie Curie, 75005 Paris (France)

2015-05-01

The low power plasma reactor is an original process which allows the deposition of ZnO controlled thickness films from an aqueous precursor solution in a cold plasma only in order to reach high growth rates. The quality of the deposited material (purity, crystallinity, size of the grains…) depends primarily on the interactions in the reactor between the droplets and the plasma. In this study, the parameters of the deposition (composition of the gases, pressure, power, temperature…) were studied and controlled. The doping characteristics are mainly influenced by the concentration of the precursors in the solution and by the method of injection. The final optimizations allowed high growth rates ranging from 0.6 to 1 nm/s. X-ray Diffraction results show a good crystallinity of the deposited layer (würtzite structure). According to the transmittance measurements, the films present a good transparency and a calculated optical gap value ranging between 3.2 and 3.3 eV. This deposition technique using plasma is fast, flexible, low power consuming and easily adaptable. Cu(In,Ga)Se{sub 2} solar cells with a ZnO window layer have successfully been achieved by using the low power plasma reactor and their performances show an efficiency of 11%. - Highlights: • The low power plasma reactor is a very fast and flexible deposition process. • ZnO films are realized from an aqueous nitrate solution in a plasma discharge only. • ZnO films exhibit good properties for the window layer application. • CIGS solar cells present promising performances with an efficiency of 11%.

Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

Energy Technology Data Exchange (ETDEWEB)

Mofor, A.C.; El-Shaer, A.; Schlenker, E.; Bakin, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Reuss, F.; Kling, R.; Schoch, W.; Limmer, W. [University Ulm, Department of Semiconductor Physics, Ulm (Germany); Ahlers, H.; Siegner, U.; Sievers, S.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Eisenmenger, J.; Mueller, T.; Ziemann, P. [University Ulm, Department of Solid State Physics, Ulm (Germany); Huebel, A.; Denninger, G. [Universitaet Stuttgart, 2. Physkalisches Institut, Stuttgart (Germany)

2007-07-15

Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al{sub 2}O{sub 3} substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. (orig.)

Characterization of spatial manipulation on ZnO nanocomposites consisting of Au nanoparticles, a graphene layer, and ZnO nanorods

Science.gov (United States)

Huang, Shen-Che; Lu, Chien-Cheng; Su, Wei-Ming; Weng, Chen-Yuan; Chen, Yi-Cian; Wang, Shing-Chung; Lu, Tien-Chang; Chen, Ching-Pang; Chen, Hsiang

2018-01-01

Three types of ZnO-based nanocomposites were fabricated consisting of 80-nm Au nanoparticles (NPs), a graphene layer, and ZnO nanorods (NRs). To investigate interactions between the ZnO NRs and Au nanoparticle, multiple material analysis techniques including field-emission scanning electron microscopy (FESEM), surface contact angle measurements, secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopic characterizations were performed. Results indicate that incorporating a graphene layer could block the interaction between the ZnO NRs and the Au NPs. Furthermore, the Raman signal of the Au NPs could be enhanced by inserting a graphene layer on top of the ZnO NRs. Investigation of these graphene-incorporated nanocomposites would be helpful to future studies of the physical properties and Raman analysis of the ZnO-based nanostructure design.

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

InP solar cell with window layer

Science.gov (United States)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

International Nuclear Information System (INIS)

Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

2009-01-01

Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

International Nuclear Information System (INIS)

Tynell, Tommi; Karppinen, Maarit

2014-01-01

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

2014-01-31

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

Impacts of Co doping on ZnO transparent switching memory device characteristics

Energy Technology Data Exchange (ETDEWEB)

Simanjuntak, Firman Mangasa; Wei, Kung-Hwa [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Prasad, Om Kumar [Department of Electrical Engineering and Computer Science, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Panda, Debashis [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Lin, Chun-An; Tsai, Tsung-Ling; Tseng, Tseung-Yuen, E-mail: tseng@cc.nctu.edu.tw [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-05-02

The resistive switching characteristics of indium tin oxide (ITO)/Zn{sub 1−x}Co{sub x}O/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

Science.gov (United States)

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

Influence of a ZnO Buffer Layer on the Structural, Optical, and Electrical Properties of ITO/ZnO Bi-Layered Films

International Nuclear Information System (INIS)

Heo, Sung-Bo; Moon, Hyun-Joo; Kim, Daeil; Kim, Jun-Ho

2016-01-01

Sn-doped indium oxide (ITO) films and ITO/ZnO bi-layered films were prepared on polycarbonate substrates by RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the ZnO thickness on the structural, optical, and electrical properties of ITO/ZnO films, the thickness of the ZnO buffer layer was varied from 5 to 20 nm. As-deposited ITO films show an average optical transmittance of 79.2% in the visible range and an electrical resistivity of 3.0×10"-"4 Ωcm, while films with a 5-nm thick ZnO buffer layer film show an electrical resistivity of 2.6×10"-"4 Ωcm and films with a 20-nm thick ZnO buffer layer show an optical transmittance of 82.0%. Based on the figure of merit, it is concluded that the ZnO buffer layer enhances the optical and electrical performance of ITO films used as transparent conducting oxides in flexible display applications.

Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

International Nuclear Information System (INIS)

Park, Dong Jun; Kim, Dong Chan; Lee, Jeong Yong; Cho, Hyung Koun

2006-01-01

The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [1 0 1-bar 0], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented

Effect of reactant concentration on the structural properties of hydrothermally-grown ZnO rods on seed-layer ZnO / polyethylene terephthalate substrates

Energy Technology Data Exchange (ETDEWEB)

Jeong, Y. I.; Shin, C. M.; Heo, J. H.; Ryu, H. [Inje University, Gimhae (Korea, Republic of); Lee, W. J. [Dong-Eui University, Busan (Korea, Republic of); Son, C. S. [Silla University, Busan (Korea, Republic of); Choi, H. [Pukyong National University, Busan (Korea, Republic of)

2011-09-15

The morphology and the structural properties were studied for zinc-oxide (ZnO) rods hydrothermally grown on seed-layer ZnO/polyethylene terephthalate (PET) substrates at various reactant concentrations. Dissolved solutions with de-ionized water, zinc nitrate hexahydrate (Zn(NO{sub 3}){sub 2}{center_dot}6H{sub 2}O, ZNH) and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}, HMT) were employed as reactants for hydrothermal growth of ZnO. The transparency of the mixtures (ZNH+HMT) with increasing reactant concentration from 0.025 to 0.25 M changed from transparent to translucent to opaque (white colors) due to Zn(OH){sub 2} precipitates. When the concentration was increased, the density of the ZnO rods increased, and the morphology of the ZnO rods changed from a hexagonal flat-end shape to a sharp-end or flake-like structure. The sharp-end rods with increasing concentration from 0.1 to 0.15 M resulted from the etching process at a lower pH condition (less than pH 6) after the ZnO rod growth, and the flake-like structure was due to a high growth rate. The ZnO seed layer might have improved the alignment of ZnO rods and made a high density of ZnO rods. In addition, the structural properties were improved at lower concentrations by inserting a seed layer.

Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

KAUST Repository

Eita, Mohamed Samir

2015-02-04

The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room-temperature, solution-processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of H25 nm yields solar cell power-conversion effi ciencies (PCEs) of ≈6%, exceeding the effi ciency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60-300 ° C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL-deposited fi lms to solar cell performance. This protocol suggests a new fabrication method for solution-processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to fl exible devices printed on plastic substrates.

Effect of heat treatments and window layer processing on the characteristics of CuInGaSe{sub 2} thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ramanathan, K.; Contreras, M.A.; Tuttle, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

Interaction between chemical bath deposited CdS and ZnO window layers are a focus of this paper. Low temperature anneals were used to follow the changes at the interface. Optical absorption spectra show that CdS and ZnO intermix upon annealing. When applied to ZnO/CdS/CuInGaSe{sub 2} thin film solar cells, changes in the short and long wavelength response were observed. The latter is attributed to an increase in the energy gap of the absorber by diffusion of S. The interdiffusion is shown to increase the short wavelength collection, and hence the current density of the devices. Photoluminescence data provides some indication of the quality of the interface.

ZnO buffer layer for metal films on silicon substrates

Science.gov (United States)

Ihlefeld, Jon

2014-09-16

Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

Characterization of Non-Polar ZnO Layers with Positron Annihilation Spectroscopy

Science.gov (United States)

Zubiaga, A.; Tuomisto, F.; Zúñiga-Pérez, J.; Muñoz-San José, V.

2008-11-01

We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy defects in ZnO grown by metal-organic vapor phase deposition on sapphire. Both c-plane and a-plane ZnO layers were measured, and Zn vacancies were identified as the dominant defects detected by positrons. The results are qualitatively similar to those of earlier experiments in GaN. The Zn vacancy concentration decreases in c-plane ZnO by almost one order of magnitude (from high 1017 cm-3 to low 1017 cm-3) when the layer thickness is increased from 0.5 to 2 μm. Interestingly, in a-plane ZnO the Zn vacancy concentration is constant at a level of about 2×1017 cm-3 in all the samples with thicknesses varying from 0.6 to 2.4 μm. The anisotropy of the Doppler broadening of the annihilation radiation parallel and perpendicular to the hexagonal c-axis was also measured.

Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer

International Nuclear Information System (INIS)

Ghobadi, Amir; Yavuz, Halil I.; Ulusoy, T. Gamze; Icli, K. Cagatay; Ozenbas, Macit; Okyay, Ali K.

2015-01-01

In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO 2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed

Solvothermal Synthesis of One-Dimensional Transition Metal Doped ZnO Nanocrystals and Their Applications in Smart Window Devices

OpenAIRE

Šutka, A; Timusk, M; Kisand, V; Saal, K; Joost, U; Lõhmus, R

2015-01-01

Oxide semiconductor nanowire (NW) suspension based devices have been attracted growing interest in smart window applications due to their great controllability of light transmittance, simplicity and long term stability. Recently, we demonstrated smart window device using the suspension of electrospun TiO2 or solvothermally synthesized ZnO NWs in viscous polydimethylsiloxane (PDMS) matrix. The operating principle of the oxide semiconductor NW and PDMS device is based on the alterable orientati...

Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

2016-11-01

Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

International Nuclear Information System (INIS)

Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

2012-01-01

The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

Self-limiting growth of ZnO films on (0 0 0 1) sapphire substrates by atomic layer deposition at low temperatures using diethyl-zinc and nitrous oxide

International Nuclear Information System (INIS)

Lin, Yen-Ting; Chung, Ping-Han; Lai, Hung-Wei; Su, Hsin-Lun; Lyu, Dong-Yuan; Yen, Kuo-Yi; Lin, Tai-Yuan; Kung, Chung-Yuan; Gong, Jyh-Rong

2009-01-01

Atomic layer deposition (ALD) of zinc oxide (ZnO) films on (0 0 0 1) sapphire substrates was conducted at low temperatures by using diethyl-zinc (DEZn) and nitrous oxide (N 2 O) as precursors. It was found that a monolayer-by-monolayer growth regime occurred at 300 deg. C in a range of DEZn flow rates from 5.7 to 8.7 μmol/min. Furthermore, the temperature self-limiting process window for the ALD-grown ZnO films was also observed ranging from 290 to 310 deg. C. A deposition mechanism is proposed to explain how saturated growth of ZnO is achieved by using DEZn and N 2 O. Transmission spectroscopic studies of the ZnO films prepared in the self-limiting regime show that the transmittances of ZnO films are as high as 80% in visible and near infrared spectra. Experimental results indicate that ZnO films with high optical quality can be achieved by ALD at low temperatures using DEZn and N 2 O precursors.

Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

Directory of Open Access Journals (Sweden)

Daria Majchrowicz

2016-03-01

Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

Science.gov (United States)

Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

2011-05-01

The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

Magnetic nanoparticles as a seed layer for growing ZnO nanowires for optical applications

International Nuclear Information System (INIS)

AlSalhi, M S; Atif, M; Ansari, Anees A; Khun, K; Ibupoto, Z H; Willander, M

2013-01-01

In the present work, cerium oxide CeO 2 nanoparticles were synthesised by sol-gel method and used for the growth of ZnO nanorods. The synthesised nanoparticles were studied by x-ray diffraction technique [XRD]. Furthermore, these nanoparticles were used as seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by using field emission scanning electron microscopy [FESEM], and x-ray diffraction [XRD] techniques. This study demonstrated that the grown ZnO nanorods are well align, uniform, good in crystal quality and possess diameter of less than 200 nm. Energy dispersive x-rays [EDX] revealed that the ZnO nanorods are only composed of zinc, cerium as seed atom and oxygen atoms and no any other impurity in the grown nanorods. Moreover, photoluminescence [PL] approach was applied for the optical characterisation and it was observed that the near-band-edge emission [NBE] was same to that of zinc acetate seed layer, however the green emission and orange/red emission peaks were slightly raised due to possible higher level of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the synthesis of controlled ZnO nanorods using cerium oxide nanoparticles as seed nucleation layer which in reverse describe the application of these nanoparticles as well as due to controlled morphology of ZnO nanorods the performance of nanodevices based on ZnO can be increased using these particles as seed.

Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

Energy Technology Data Exchange (ETDEWEB)

Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-02-01

ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

Energy Technology Data Exchange (ETDEWEB)

Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

2009-07-30

In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

Science.gov (United States)

Li, Huijin; Han, Dedong; Dong, Junchen; Yu, Wen; Liang, Yi; Luo, Zhen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2018-05-01

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 °C and ZnO film grown at 120 °C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 × 10-13 A, Ion/Ioff ratio of 3.4 × 109, saturation mobility μsat of 12 cm2 V-1 s-1, subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual-layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time.

Graphene-Tapered ZnO Nanorods Array as a Flexible Antireflection Layer

Directory of Open Access Journals (Sweden)

Taeseup Song

2015-01-01

Full Text Available Flexible solar cells have drawn a great deal of attention due to their various advantages including deformable and wearable characteristics. In the solar cells, the antireflection layer plays an important role in the improvement in the conversion efficiency by increasing the light transmission and suppressing the Fresnel refraction. For the successful implantation of the antireflection layer into the flexible solar cells, the flexible mechanical property of the antireflection layer is also necessary. However, the study on flexible antireflection layer for the flexible solar cells or optoelectronics is still lacking. In this study, we report the graphene-tapered ZnO nanorods array as a flexible antireflection layer for the application in flexible solar cells. Flexible two-dimensional graphene sheet and the tapered morphology of ZnO nanorods enable conformal coverage on the flexible substrate with curved surface and significant improvements in antireflection properties, respectively.

Specifications of ZnO growth for heterostructure solar cell and PC1D based simulations

Directory of Open Access Journals (Sweden)

Babar Hussain

2015-12-01

Full Text Available This data article is related to our recently published article (Hussain et al., in press [1] where we have proposed a new solar cell model based on n-ZnO as front layer and p-Si as rear region. The ZnO layer will act as an active n-layer as well as antireflection (AR coating saving considerable processing cost. There are several reports presenting use of ZnO as window/antireflection coating in solar cells (Mansoor et al., 2015; Haq et al., 2014; Hussain et al., 2014; Matsui et al., 2014; Ding et al., 2014 [2–6] but, here, we provide data specifically related to simultaneous use of ZnO as n-layer and AR coating. Apart from the information we already published, we provide additional data related to growth of ZnO (with and without Ga incorporation layers using MOCVD. The data related to PC1D based simulation of internal and external quantum efficiencies with and without antireflection effects of ZnO as well as the effects of doping level in p-Si on current–voltage characteristics have been provided.

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

Science.gov (United States)

Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

2018-01-01

ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

Science.gov (United States)

Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

2018-05-01

This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

Investigation of thin ZnO layers in view of laser desorption-ionization

Energy Technology Data Exchange (ETDEWEB)

Grechnikov, A A; Borodkov, A S [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, 19 Kosygin Str., 119991 Moscow (Russian Federation); Georgieva, V B [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Alimpiev, S S; Nikiforov, S M; Simanovsky, Ya O [General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow (Russian Federation); Dimova-Malinovska, D; Angelov, O I, E-mail: lazarova@issp.bas.b [Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria)

2010-04-01

Thin zinc oxide films (ZnO) were developed as a matrix-free platform for surface assisted laser desorption-ionization (SALDI) time-of-flight mass spectrometry. The ZnO films were deposited by RF magnetron sputtering of ZnO ceramic targets in Ar atmospheres on monocrystalline silicon. The generation under UV (355 nm) laser irradiation of positive ions of atenolol, reserpine and gramicidin S from the ZnO layers deposited was studied. All analytes tested were detected as protonated molecules with no or very structure-specific fragmentation. The mass spectra obtained showed low levels of chemical background noise. All ZnO films studied exhibited high stability and good reproducibility. The detection limits for test analytes are in the 10 femtomol range.

Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

International Nuclear Information System (INIS)

Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

2012-01-01

ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

Luminescence properties of ZnO layers grown on Si-on-insulator substrates

International Nuclear Information System (INIS)

Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S.

2006-01-01

The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E 2 high optical phonon mode near 438 cm -1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems

Interfacial passivation of CdS layer to CdSe quantum dots-sensitized electrodeposited ZnO nanowire thin films

International Nuclear Information System (INIS)

Zhang, Jingbo; Sun, Chuanzhen; Bai, Shouli; Luo, Ruixian; Chen, Aifan; Sun, Lina; Lin, Yuan

2013-01-01

ZnO porous thin films with nanowire structure were deposited by the one-step electrochemical deposition method. And a CdS layer was coated on the as-deposited ZnO nanowire thin films by successive ionic layer adsorption and reaction (SILAR) method to passivate surface states. Then the films were further sensitized by CdSe quantum dots (QDs) to serve as a photoanode for fabricating quantum dots-sensitized solar cells (QDSSCs). The effect of the CdS interfacial passivation layer on the performance of the QDSSCs was systematically investigated by varying the SILAR cycle number and heating the passivation layer. The amorphous CdS layer with an optimized thickness can effectively suppress the recombination of the injected electrons with holes on QDs and the redox electrolyte. The newly formed CdS layer on the surface of the ZnO nanowire thin film obviously prolongs the electron lifetime in the passivated ZnO nanoporous thin film because of the lower surface trap density in the ZnO nanowires after CdS deposition, which is favorable to the higher short-circuit photocurrent density (J sc ). For the CdSe QDs-sensitized ZnO nanoporous thin film with the interfacial passivation layer, the J sc and conversion efficiency can reach a maximum of 8.36 mA cm −2 and 2.36%, respectively. The conversion efficiency was improved by 83.47% compared with that of the cell based on the CdSe QDs-sensitized ZnO nanoporous thin film without CdS interfacial passivation (0.39%)

Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

NARCIS (Netherlands)

Garcia - Alonso, D.; Potts, S.E.; Helvoirt, van C.A.A.; Verheijen, M.A.; Kessels, W.M.M.

2015-01-01

Doped ZnO films are an important class of transparent conductive oxides, with many applications demanding increased growth control and low deposition temperatures. Therefore, the preparation of B-doped ZnO films by atomic layer deposition (ALD) at 150 °C was studied. The B source was triisopropyl

Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

International Nuclear Information System (INIS)

Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

2007-01-01

Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

International Nuclear Information System (INIS)

Herrero, J.; Guillen, C.

2004-01-01

The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

High quality ZnO layers with adjustable refractive indices for integrated optics applications

NARCIS (Netherlands)

Heideman, Rene; Lambeck, Paul; Gardeniers, Johannes G.E.

1995-01-01

Thin (approx. 1 μm) crystalline ZnO films with a good optical quality and a good (0002) texture are grown under two considerably different process parameter sets using a r.f. planar magnetron sputtering unit. The optical parameters of the two corresponding ZnO layers are distinctly different: high

Efficient solution route to transparent ZnO semiconductor films using colloidal nanocrystals

Directory of Open Access Journals (Sweden)

Satoshi Suehiro

2016-09-01

Full Text Available ZnO nanocrystals (NCs were synthesized by heating Zn (II acetylacetonate in oleic acid/oleylamine in the presence of 1,2-hexadecanediol at 220 °C. Transmission electron microscopy (TEM and dynamic light scattering (DLS measurements revealed the formation of monodispersed ZnO NCs of ca. 7 nm. ZnO NC assembled films were fabricated on a glass substrate by deposition with the colloidal ZnO NCs dispersed in toluene. The film composed of the NCs showed good optical transparency in the visible to near-infrared region. A device coupling the ZnO NC film with a p-type Cu2ZnSnS4 (CZTS NC film exhibited an obvious diode-like current–voltage behavior. The results suggest that the transparent ZnO film has a potentiality to be used for an n-type window layer in some optoelectronic applications.

Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

International Nuclear Information System (INIS)

Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

2013-01-01

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method

Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

Energy Technology Data Exchange (ETDEWEB)

Sun, Yunfei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Yang, Lili; Cao, Jian [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Gao, Ming [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Zhang, Zhiqiang; Wang, Zhe [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Song, Hang [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2013-04-15

ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

Sims Characterisation of ZnO Layer Prepared By Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Andrej Vincze

2005-01-01

Full Text Available New material development requires new technologies to create and prepare basic material for semiconductor industry and device applications. Materials have given properties, which exhibit particulary small tolerances. One of the most important and promising material is recently ZnO. ZnO has specific properties for near UV emission and absorption optical devices. The pulsed laser deposition (PLD is one of the methods to prepare this type of material. The aim of this paper is to compare properties of ZnO layers deposited from pure Zn target in oxygen atmosphere and the analysis of their surface properties by secondary ion mass spectroscopy (SIMS, atomic force microscopy (AFM and scanning electron microscopy (SEM.

Atomic Layer Deposition of ZnO on Multi-walled Carbon Nanotubes and Its Use for Synthesis of CNT–ZnO Heterostructures

Directory of Open Access Journals (Sweden)

Li C

2010-01-01

Full Text Available Abstract In this article, direct coating of ZnO on PECVD-grown multi-walled carbon nanotubes (MWCNTs is achieved using atomic layer deposition (ALD. Transmission electron microscopy investigation shows that the deposited ZnO shell is continuous and uniform, in contrast to the previously reported particle morphology. The ZnO layer has a good crystalline quality as indicated by Raman and photoluminescence (PL measurements. We also show that such ZnO layer can be used as seed layer for subsequent hydrothermal growth of ZnO nanorods, resulting in branched CNT–inorganic hybrid nanostructures. Potentially, this method can also apply to the fabrication of ZnO-based hybrid nanostructures on other carbon nanomaterials.

Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

International Nuclear Information System (INIS)

Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

2012-01-01

Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

International Nuclear Information System (INIS)

Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

2009-01-01

The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

Science.gov (United States)

Kim, Hyomin; Kwon, Yiseul; Choe, Youngson

2013-05-01

We have investigated the effect of fibrous nanostructured ZnO film as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the concentration of zinc acetate dihydrate, the changes of performance characteristics were evaluated. Fibrous nanostructured ZnO film was prepared by sol-gel process and annealed on a hot plate. As the concentration of zinc acetate dihydrate increased, ZnO fibrous nanostructure grew from 300 to 600 nm. The obtained ZnO nanostructured fibrous films have taken the shape of a maze-like structure and were characterized by UV-visible absorption, scanning electron microscopy, and X-ray diffraction techniques. The intensity of absorption bands in the ultraviolet region was increased with increasing precursor concentration. The X-ray diffraction studies show that the ZnO fibrous nanostructures became strongly (002)-oriented with increasing concentration of precursor. The bulk heterojunction photovoltaic cells were fabricated using poly(3-hexylthiophene-2,5-diyl) and indene-C60 bisadduct as active layer, and their electrical properties were investigated. The external quantum efficiency of the fabricated device increased with increasing precursor concentration.

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

Directory of Open Access Journals (Sweden)

Tzu-Yi Yu

2017-06-01

Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

Directory of Open Access Journals (Sweden)

Sibel MORKOÇ KARADENİZ

2016-11-01

Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

International Nuclear Information System (INIS)

Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

2013-01-01

We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates.

Science.gov (United States)

Kim, Seung Hyun; Joo, So Yeong; Jin, Hyun Soo; Kim, Woo-Byoung; Park, Tae Joo

2016-08-17

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.

Enhanced efficiency of organic solar cells by using ZnO as an electron-transport layer

Science.gov (United States)

Ullah, Irfan; Shah, Said Karim; Wali, Sartaj; Hayat, Khizar; Khattak, Shaukat Ali; Khan, Aurangzeb

2017-12-01

This paper reports the use of ZnO, processed by sol-gel, as an efficient electron-transport layer for inverted organic photovoltaic cells. The device with incorporated ZnO interlayer, annealed at 100 °C, between transparent electrode and blend film plays an effective role in enhancing photovoltaic properties: the short-circuit current density (J sc) doubles while open-circuit voltage (V oc) and fill factor increase by 0.12 V and 10 %, respectively. Power conversion efficiency (PCE) of solar cell increases, approximately, three times. The improvement in the PCE is attributed to the presence of ZnO which, being an electron-facilitating layer, provides an energy step for charge collection at electrodes.

Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

International Nuclear Information System (INIS)

Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

2012-01-01

In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

Oxygen reduction at electrodeposited ZnO layers in alkaline solution

International Nuclear Information System (INIS)

Prestat, M.; Vucko, F.; Lescop, B.; Rioual, S.; Peltier, F.; Thierry, D.

2016-01-01

Zinc oxide (ZnO) layers were electrodeposited from an aqueous nitrate bath at 62 °C on copper substrates. At −0.9 V (vs. saturated calomel reference electrode), the growth rate is 600 nm min −1 . In the early stages of the deposition, the layers are porous. At longer deposition times, the surface becomes dense and rough. The wurtzite crystalline structure is confirmed by XRD measurements and the chemical composition of the ZnO surface was assessed by EDX and XPS. The oxygen reduction reaction (ORR) was investigated at room temperature in a 10 −3 M KOH solution with KCl as supporting electrolyte. The ORR onset potential is found to be much larger than that of platinum taken as reference electrocatalyst. Rotating ring-disk electrode experiments evidence a negligible production of hydrogen peroxide as intermediate product of the reaction. The latter follows thus a direct four-electron pathway at pH ∼11.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho

2017-02-27

Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

Directory of Open Access Journals (Sweden)

Hsin-Ying Lee

2014-01-01

Full Text Available The GaN-based flip-chip white light-emitting diodes (FCWLEDs with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

A layer-by-layer ZnO nanoparticle-PbS quantum dot self-assembly platform for ultrafast interfacial electron injection

KAUST Repository

Eita, Mohamed Samir

2014-08-28

Absorbent layers of semiconductor quantum dots (QDs) are now used as material platforms for low-cost, high-performance solar cells. The semiconductor metal oxide nanoparticles as an acceptor layer have become an integral part of the next generation solar cell. To achieve sufficient electron transfer and subsequently high conversion efficiency in these solar cells, however, energy-level alignment and interfacial contact between the donor and the acceptor units are needed. Here, the layer-by-layer (LbL) technique is used to assemble ZnO nanoparticles (NPs), providing adequate PbS QD uptake to achieve greater interfacial contact compared with traditional sputtering methods. Electron injection at the PbS QD and ZnO NP interface is investigated using broadband transient absorption spectroscopy with 120 femtosecond temporal resolution. The results indicate that electron injection from photoexcited PbS QDs to ZnO NPs occurs on a time scale of a few hundred femtoseconds. This observation is supported by the interfacial electronic-energy alignment between the donor and acceptor moieties. Finally, due to the combination of large interfacial contact and ultrafast electron injection, this proposed platform of assembled thin films holds promise for a variety of solar cell architectures and other settings that principally rely on interfacial contact, such as photocatalysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Substrate type < 111 >-Cu{sub 2}O/<0001 >-ZnO photovoltaic device prepared by photo-assisted electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Zamzuri, Mohd, E-mail: zamzuri@tf.me.tut.ac.jp [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); School of Manufacturing Eng., Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600 Arau, Perlis (Malaysia); Sasano, Junji [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Mohamad, Fariza Binti [Faculty of Electrical & Electronic Eng., University Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor (Malaysia); Izaki, Masanobu [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

2015-11-30

The substrate-type < 0001 > ZnO/<111 > Cu{sub 2}O photovoltaic (PV) device has been constructed by electrodeposition of a < 111 >-p-Cu{sub 2}O layer on an Au(111)/Si wafer substrate followed by stacking the n-ZnO layer by electrodeposition during light irradiation in aqueous solutions. The PV device was fabricated by stacking the Al:ZnO-window by sputtering and the top Al electrode by vacuum evaporation. The < 0001 >-ZnO layer was composed of aggregates of hexagonal columnar grains grown in the direction normal to the surface, and pores could be observed between the ZnO grains at the deposition time last 1800 s. The < 0001 >-ZnO/<111 >-Cu{sub 2}O PV device showed a photovoltaic performance under AM1.5 illumination, and showed the improved short-circuit current density of 5.87 mA cm{sup −2} by stacking the AZO-TCO due to the increase in the diffusion length of the carrier. - Highlights: • Substrate type ZnO/Cu{sub 2}O photovoltaic devices only by electrodeposition • ZnO layer was stacked on the Cu{sub 2}O layer by photo-assisted electrodeposition. • AZO/ZnO/Cu{sub 2}O photovoltaic devices with a short-circuit current density of 5.87 mA cm{sup −2}.

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

Science.gov (United States)

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Development of Enhanced Window layers for CIGS Photovoltaic Devices

Science.gov (United States)

Alexander, J. Nicholas

One of the most promising thin film devices right now is the Copper Indium Gallium Selenide (CIGS) solar cell with maximum reported power conversion efficiency of 22.3%. The Transparent Conducting Oxide (TCO) which is the top layer of the CIGS device also known as the window layer, is responsible for collecting the electrons generated in the CIGS device and conducting them to the circuit. Development of a very low resistivity film with a high optical transmission is crucial for optimal performance of devices as well as the ability to be deployed without changes to their properties for several decades. Current TCOs such as indium tin oxide (ITO) and aluminum doped zinc oxide (AZO) are met with limitations with either using large amounts of expensive materials such as indium, often requiring and anneal step to obtain good conductivity, or have shown poor long term reliability. This thesis is focused on development of InZnO and zirconium doped InZnO as a potential replacement TCO to obtain high conductivity and high transmission like the leading TCOs without needing heated depositions, post deposition annealing, and maintain a good film reliability. Zirconium doping was employed to farther enhance both the optical and electrical properties through enhancement of the films high frequency permittivity of InZnO while providing improved reliability to the film. The films were grown through a mix of DC and RF co-sputtering. InZnO films were deposited at varying indium concentration ( 10-30%) and samples were able to achieve low resistivity ( 7x10-4 O-cm), high mobility (>30 cm2/v.s), high carrier concentration (>10 20 cm-3), while maintaining high transmission (> 80%) in the visible and near-infrared region. After zirconium was incorporated into the InZnO films by replacement of the ZnO target with a ZrO2/ZnO (5:95) target, films of Zr:InZnO were deposit through the same method to achieve films that maintained very similar electrical and optical properties. The little

Influence of ZnO seed layer precursor molar ratio on the density of interface defects in low temperature aqueous chemically synthesized ZnO nanorods/GaN light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Iandolo, Donata; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Linköping University, SE-601 74 Norrköping (Sweden); Pozina, Galia; Khranovskyy, Volodymyr; Liu, Xianjie [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

2016-04-28

Low temperature aqueous chemical synthesis (LT-ACS) of zinc oxide (ZnO) nanorods (NRs) has been attracting considerable research interest due to its great potential in the development of light-emitting diodes (LEDs). The influence of the molar ratio of the zinc acetate (ZnAc): KOH as a ZnO seed layer precursor on the density of interface defects and hence the presence of non-radiative recombination centers in LT-ACS of ZnO NRs/GaN LEDs has been systematically investigated. The material quality of the as-prepared seed layer as quantitatively deduced by the X-ray photoelectron spectroscopy is found to be influenced by the molar ratio. It is revealed by spatially resolved cathodoluminescence that the seed layer molar ratio plays a significant role in the formation and the density of defects at the n-ZnO NRs/p-GaN heterostructure interface. Consequently, LED devices processed using ZnO NRs synthesized with molar ratio of 1:5 M exhibit stronger yellow emission (∼575 nm) compared to those based on 1:1 and 1:3 M ratios as measured by the electroluminescence. Furthermore, seed layer molar ratio shows a quantitative dependence of the non-radiative defect densities as deduced from light-output current characteristics analysis. These results have implications on the development of high-efficiency ZnO-based LEDs and may also be helpful in understanding the effects of the ZnO seed layer on defect-related non-radiative recombination.

Fabrication and characterization of ZnO nanowires array electrodes with high photocurrent densities: Effects of the seed layer calcination time

Energy Technology Data Exchange (ETDEWEB)

Lu, Yi-Jing; Liu, Ching-Fang; Hu, Chi-Chang, E-mail: cchu@che.nthu.edu.tw; Kuo, Jen-Hou; Boddula, Rajender

2017-03-01

In this work, we demonstrate that vertically grown ZnO nanowire (NW) arrays of the wurzite phase were successfully fabricated on fluorine doped tin oxide (FTO) substrates via a hydrothermal method. The coating of a seed layer onto the FTO substrates was found to favor the growth of a uniform ZnO NWs array which shows saturation in the photocurrent density with a relatively low potential bias. Furthermore, prolonging the calcination time of the seed layer makes the ZnO NWs behave the better charge separation and improve the photo-electrochemical performance. Under the irradiation at a 75 mW cm{sup −2} from a simulated sunlight source, the ZnO NWs array electrode prepared from the seed layer with calcination at 350 °C for 5 h shows a saturated photocurrent density of 514 μA cm{sup −2} and a maximum half-cell solar-to-hydrogen (HC-STH) efficiency of 0.26% was obtained at 0.6 V versus reversible hydrogen electrode (RHE) in neutral electrolyte. - Highlights: • The seed layer annealing time strongly influences the textural and photo-activity of ZnO NWs. • The average diameter and density of ZnO NWs were controlled to 47–70 nm and 46–70 NWs μm{sup −2}, respectively. • ZnO NWs show promising application potential in solar-electrocatalytic water splitting under potential bias. • The ZnO NWs with SL annealing time = 5 h achieve the highest HC-STH efficiency of 0.26% at 0.6 V.

Influence of the processing conditions on the structural properties of ZnO layers obtained by PECVD

Energy Technology Data Exchange (ETDEWEB)

Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Institute of Optical Materials and Technology ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl.109, 1113 Sofia (Bulgaria)

2010-11-01

The plasma enhanced chemical vapor deposition (PECVD) is a powerful and flexible instrument for depositing thin layers, nanocomposites or nanostructures. In this work ZnO layers have been grown by metal-organic PECVD (RF - 13.56 MHz) on Si wafers. Zn acetylacetonate has been used as a precursor and oxygen as oxidant. The influence of the oxygen content in gas mixture, the total pressure, substrate temperature and ZnO seed layer on the structural properties of the layers deposited on Si wafers has been studied. ZnO layer properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD data have shown that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along c-axis direction perpendicular to the substrate surfaces. The results obtained indicate that by controlling the oxygen content in gas mixture, the total pressure and substrate temperature during the film growth one can control the formation of c-axis phase and the crystallite grain size. Nanorods with good alignment, vertically orientated to the substrate surface can be observed in the layers deposited at low content of O{sub 2} in plasma at substrate temperature of 400 {sup o}C. Due to their structural characteristics these layers are potential materials for preparing chemical- and biosensors where inherently large surface to volume ratio of structured materials are important prerequisite for enhanced sensitivity.

Simple Preparation of ZnO Nano-layer by Sol-Gel Method as Active Electrode in P3HT/ZnO Heterojunction Solar Cell

Science.gov (United States)

Aprilia, Annisa; Herman, Hidayat, Rahmat

2010-10-01

Highly transparent undoped ZnO thin films have been prepared on glass and indium tin oxide substrates with simple process by sol-gel route and dip-coating deposition. Gel precursor of ZnO was prepared from zinc acetat dehydrate solution in methanol with the addition of trietylamine as stabilizing agent. Thin layer of gel precursor was prepared by dip coating and then followed by calcination at 400° C for 5 minute in air atmosphere. The thickness of the resulted ZnO thin film produced by ten times coating is about 150 nm. The films shows high transmittance larger than 98% in the visible region (400-800 nm). Absorption is observed in the UV region with absorption onset at about 390 nm indicating varying band gap between 3.18 eV until 3.23 eV depending on the number of coating layer. The AFM image shows that the films seems to be constructed from random stacking of nano-sized ZnO particle in the order of 50 nm. Among the prepared samples, the lowest resistivity is about 1.8×107 Ωm observed in the five-layer coating film. In order to fabricate solar cell structure, P3HT was deposited onto the ZnO thin film layer by spin casting technique and then followed by metal (Au) layer deposition by thermal evaporation. The formed solar cell has the inverted type solar cell with ITO/ZnO/P3HT/Au configuration. By the insertion ZnO layer, the photocurrent was improved by more than ten orders of magnitude in comparison to that of without ZnO layer. The measured photocurrent decreases at large number of coating layer which is supposed to be related with the current limitation by the effective carrier path length in ZnO layer.

A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers.

Science.gov (United States)

Xu, Man; Wachters, Arthur J H; van Deelen, Joop; Mourad, Maurice C D; Buskens, Pascal J P

2014-03-10

We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIGS layer does not decrease monotonically with its layer thickness due to interference effects. Ergo, high precision is required in the CIGS production process, especially when using ultra-thin absorber layers, to accurately realize the required thickness of the ZnO, cadmium sulfide (CdS) and CIGS layer. We show that patterning the ZnO window layer can strongly suppress these interference effects allowing a higher tolerance in the production process.

Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

Science.gov (United States)

Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

2017-03-01

The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

Layer-by-layer-assembled quantum dot multilayer sensitizers: how the number of layers affects the photovoltaic properties of one-dimensional ZnO nanowire electrodes.

Science.gov (United States)

Jin, Ho; Choi, Sukyung; Lim, Sang-Hoon; Rhee, Shi-Woo; Lee, Hyo Joong; Kim, Sungjee

2014-01-13

Layer cake: Multilayered CdSe quantum dot (QD) sensitizers are layer-by-layer assembled onto ZnO nanowires by making use of electrostatic interactions to study the effect of the layer number on the photovoltaic properties. The photovoltaic performance of QD-sensitized solar cells critically depends on this number as a result of the balance between light-harvesting efficiency and carrier-recombination probability. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO_2 seed layer

International Nuclear Information System (INIS)

Asib, N. A. M.; Afaah, A. N.; Aadila, A.; Khusaimi, Z.; Rusop, M.

2016-01-01

Titanium dioxide (TiO_2) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO_2 seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO_2 seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO_2 seed layer of 0.100 M. PL spectra of the TiO_2: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO_2 seed layer.

ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

Science.gov (United States)

Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

Effect of the substrate surface topology and temperature on the structural properties of ZnO layers obtained by plasma enhanced chemical vapour deposition

Energy Technology Data Exchange (ETDEWEB)

Kitova, S; Danev, G, E-mail: skitova@clf.bas.b [Acad. J .Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl.109, 1113 Sofia (Bulgaria)

2010-04-01

In this work thin ZnO layers were grown by metal-organic PECVD (RF 13.56 MHz) on Si wafers. Zn acetylacetonate was used as a precursor and oxygen as oxidant. A system for dosed injection of the precursor and oxidant into the plasma reactor was developed. The influence of the substrate surface topology and temperature on the structural properties of the deposited layers was studied. ZnO and graphite powder dispersions were used to modify the silicon wafers before starting the deposition process of the layers. Some of the ZnO layers were deposited on the back, unpolished, side of Si wafers. Depositions at 400 {sup 0}C were performed to examine the effect of the substrate temperatures on the layer growth. The film structure was examined by XRD and SEM. The results show that all layers are crystalline with hexagonal wurtzite structure. The crystallites are preferentially oriented along the c-axis direction perpendicular to the substrate surfaces. ZnO layers deposited on thin ZnO seed films and clean Si surface exhibit well-developed grain structures and more c-axis preferred phase with better crystal quality than that of the layers deposited on graphite seed layer or rough, unpolished Si wafer.

Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

International Nuclear Information System (INIS)

Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

2009-01-01

The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

Selective Excitation of Window and Buffer Layers in Chalcopyrite Devices and Modules

Energy Technology Data Exchange (ETDEWEB)

Glynn, Stephen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Repins, Ingrid L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Burst, James M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beall, Carolyn L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bowers, Karen A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mansfield, Lorelle M [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2018-02-02

Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. This provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.

Red layered medieval stained glass window characterization by means of micro-PIXE technique

Energy Technology Data Exchange (ETDEWEB)

Ortega-Feliu, I., E-mail: iofeliu@us.es [Centro Nacional de Aceleradores, Universidad de Sevilla, Avda. Thomas A. Edison 7, 41092 Sevilla (Spain); Gomez-Tubio, B. [Centro Nacional de Aceleradores, Universidad de Sevilla, Avda. Thomas A. Edison 7, 41092 Sevilla (Spain); Departamento de Fisica Aplicada III, Universidad de Sevilla (Spain); Respaldiza, M.A. [Centro Nacional de Aceleradores, Universidad de Sevilla, Avda. Thomas A. Edison 7, 41092 Sevilla (Spain); Departamento de Fisica Atomica, Molecular y Nuclear, Universidad de Sevilla (Spain); Capel, F. [Instituto de Ceramica y Vidrio, Consejo Superior de Investigaciones Cientificas (Spain)

2011-10-15

Red layered medieval stained glass windows on a transparent greenish substrate are characteristic of European medieval cathedrals, but few compositional analyses have been performed on the coloured layers. The PIXE technique has been performed on a red layered stained glass window obtained during the restoration works carried out in Las Huelgas Monastery in Burgos (Spain). Protons of 3 MeV with a beam of 4 x 5 {mu}m{sup 2} were used to acquire elemental maps of a cross section of the sample, in order to observe the homogeneity of the layered structure and its substrate. In our work, copper was detected as in other layered glasses but a correspondence with lower amounts of zinc has also been determined. Both elements appear enriched in the red coloured layers, while the other quantified elements have the same relative composition along the sample. Corrosion layers, due to the lead supporting structure of the window, were also found.

Rational growth of semi-polar ZnO texture on a glass substrate for optoelectronic applications

Science.gov (United States)

Lu, B.; Ma, M. J.; Ye, Y. H.; Lu, J. G.; He, H. P.; Ye, Z. Z.

2013-02-01

Semi-polar ZnO films with surface texture were grown on glass substrates via pulsed-laser deposition (PLD) through Co-Ga co-doping. Oxygen pressure (PO2) was found to have significant effects on the structural and optical properties of the Zn(Co, Ga)O (ZCGO) films. A self-textured film with (1\\,0\\,\\bar {1}\\,1) preferred orientation (PO) was achieved by varying the growth conditions including a crucial narrow PO2 window and growth time. A possible mechanism underlying the PO evolution and the final texture of the films was proposed, which can be attributed to the collaboration of the doping effect and the PO2-dependent evolutionary selection process, in which certain grains can have increased vertical growth rate with respect to the substrate surface through interplane diffusion. Moreover, the growth of undoped pure ZnO films proceeded by using the (1\\,0\\,\\bar {1}\\,1) ZCGO film as a buffer layer. The ZnO layers retained a semi-polar characteristic with improved crystallinity and better optical quality. The epitaxy-like orientation of ZnO layers grown on (1\\,0\\,\\bar {1}\\,1) ZCGO films has applications in the development of semi-polar ZnO-based light-emitting diodes.

Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure

Science.gov (United States)

Li, Qi; Qian, Lirong; Fu, Sulei; Song, Cheng; Zeng, Fei; Pan, Feng

2018-04-01

Characteristics of one-port surface acoustic wave (SAW) resonators fabricated on ZnO/6H-SiC layered structure were investigated experimentally and theoretically. Phase velocities (V p), electromechanical coupling coefficients (K 2), quality factors (Q), and temperature coefficients of frequency (TCF) of Rayleigh wave (0th mode) and first- and second-order Sezawa wave (1st and 2nd modes, respectively) for different piezoelectric film thickness-to-wavelength (h ZnO /λ) ratios were systematically studied. Results demonstrated that one-port SAW resonators fabricated on the ZnO/6H-SiC layered structure were promising for high-frequency SAW applications with moderate K 2 and TCF values. A high K 2 of 2.44% associated with a V p of 5182 m s‑1 and a TCF of  ‑41.8 ppm/°C was achieved at h ZnO /λ  =  0.41 in the 1st mode, while a large V p of 7210 m s‑1 with a K 2 of 0.19% and a TCF of  ‑36.4 ppm/°C was obtained for h ZnO /λ  =  0.31 in the 2nd mode. Besides, most of the parameters were reported for the first time and will be helpful for the future design and optimization of SAW devices fabricated on ZnO/6H-SiC layered structures.

Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

Energy Technology Data Exchange (ETDEWEB)

Zhu, Yizhou; Liu, Xiangmei [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China); Yeung, Kelvin W.K. [Division of Spine Surgery, Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong (China); Chu, Paul K. [Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Wu, Shuilin, E-mail: shuilin.wu@gmail.com [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China)

2017-04-01

Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

International Nuclear Information System (INIS)

Zhu, Yizhou; Liu, Xiangmei; Yeung, Kelvin W.K.; Chu, Paul K.; Wu, Shuilin

2017-01-01

Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

LIBS: study of elemental profile of different layers of the optical window of Tokamak

International Nuclear Information System (INIS)

Maurya, Gulab Singh; Jyotsna, Aradhana; Rai, Awadhesh Kumar; Ajai Kumar

2012-01-01

In the Tokamak, during confinement of plasma, impurities are deposited on optical window, mirror, limiters, etc. of the tokamak. Thus a layer of impurity on the surface of the optical window causes less visibility which creates problem in the study of plasma parameters and other diagnostics of the plasma generated in the tokamak. Laser Induced Breakdown Spectroscopy (LIBS) is a useful atomic spectroscopic technique for analysis of materials in any phase (Solid, Liquid, Gas etc). LIBS spectra of optical window have been recorded in the spectral range of 200-500 nm. In present study we have focused laser on the surface of the window, to study the layer-wise elemental profile of optical window, we have recorded the LIBS spectra with increasing number of laser shots on the same point of the window. In first laser shot, spectral signature of Cr, Fe, and Ni etc. are present in the LIBS spectra, which is related with the impurity but after five to six laser shots at the same point of the optical window spectral signature Si, B are observed which is related to the glass material. Thus our study demonstrates the capability of LIBS as an in-situ monitoring tool for detection of elemental profile in different layers of optical window of the Tokamak. (author)

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

ZnO as dielectric for optically transparent non-volatile memory

International Nuclear Information System (INIS)

Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

2009-01-01

This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

Effects of ZnS layer on the performance improvement of the photosensitive ZnO nanowire arrays solar cells

Energy Technology Data Exchange (ETDEWEB)

Javed, Hafiz Muhammad Asif [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Que, Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Gao, Yanping; Xing, Yonglei [Electronic Materials Research Laboratory, International Center for Dielectric Research, Key Laboratory of the Ministry of Education, Xi' an Jiaotong University, Xi' an, 710049 (China); Kong, Ling Bing, E-mail: ELBKong@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)

2016-08-01

The impact of ZnS layer as an interface modification on the photosensitive ZnO nanowire arrays solar cells was studied. CdS, CdSe and ZnS were deposited on ZnO nanowire arrays by SILAR method. When a ZnS layer was deposited, the quantum dot barrier was indirectly become in contact with the electrolyte, which thus restrained the flow of electrons. The CdS sensitized solar cells has an efficiency of 0.55% with the deposition of the ZnS(3) layer, that is, with a deposition of three times, whereas the CdS/CdSe co-sensitized solar cells has an efficiency of 2.03% with the deposition of the ZnS(1) layer. It was also noted that as the thickness of the of ZnS layer was increased, V{sub oc}, I{sub sc} and efficiencies of both the solar cells were first increased and then decreased. In addition, the CdS/N719 solar cells has an efficiency of 0.75% with the deposition of the ZnS(2) layer. - Highlights: • The impact of ZnS layer on the photosensitive ZnO nanowire solar cells was studied. • ZnS layer restrained the flow of electrons to the electrolyte. • CdS/CdSe co-sensitized solar cells have higher efficiency than CdS solar cells. • When ZnS layer was increased, V{sub oc} and I{sub sc} firstly increased and then decreased.

Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

Energy Technology Data Exchange (ETDEWEB)

Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

2017-01-15

ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

International Nuclear Information System (INIS)

Kim, Byunggu; Leem, Jae-Young

2017-01-01

ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

2015-07-15

Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shell materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition

Stable Inverted Low-Bandgap Polymer Solar Cells with Aqueous Solution Processed Low-Temperature ZnO Buffer Layers

Directory of Open Access Journals (Sweden)

Chunfu Zhang

2016-01-01

Full Text Available Efficient inverted low-bandgap polymer solar cells with an aqueous solution processed low-temperature ZnO buffer layer have been investigated. The low-bandgap material PTB-7 is employed so that more solar light can be efficiently harvested, and the aqueous solution processed ZnO electron transport buffer layer is prepared at 150°C so that it can be compatible with the roll-to-roll process. Power conversion efficiency (PCE of the inverted device reaches 7.12%, which is near the control conventional device. More importantly, the inverted device shows a better stability, keeping more than 90% of its original PCE after being stored for 625 hours, while PCE of the conventional device is only 75% of what it was. In addition, it is found that the ZnO thin film annealed in N2 can obviously increase PCE of the inverted device further to 7.26%.

Influence of seed layer treatment on low temperature grown ZnO nanotubes: Performances in dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Ameen, Sadia [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Akhtar, M. Shaheer [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); New and Renewable Energy Material Development Center (NewREC), Chonbuk National University, Buan-gun, Jeonbuk (Korea, Republic of); Kim, Young Soon [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, O-Bong [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shin, Hyung-Shik, E-mail: hsshin@jbnu.ac.k [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2011-01-01

Non-aligned and highly densely aligned ZnO nanotube (NTs), synthesized by low temperature solution method were applied as photoanode materials for the fabrication of efficient dye-sensitized solar cells (DSSCs). The crystalline and the morphological analysis revealed that the grown aligned ZnO NTs possessed a typical hexagonal crystal structure of outer and inner diameter {approx}250 nm and {approx}100 nm, respectively. ZnO seeding on FTO substrates is an essential step to achieve the aligned ZnO NTs. A DSSC fabricated with aligned ZnO NTs photoanode achieved high solar-to-electricity conversion efficiency of {approx}2.2% with short circuit current (J{sub SC}) of 5.5 mA/cm{sup 2}, open circuit voltage (V{sub OC}) of 0.65 V and fill factor (FF) of 0.61. Significantly, the aligned ZnO NTs photoanode showed three times improved solar-to-electricity conversion efficiency than DSSC fabricated with non-aligned ZnO NTs. The enhanced performances were credited to the aligned morphology of ZnO NTs which executed the high charge collection and the transfer of electrons at the interfaces of ZnO NTs and electrolyte layer.

Antibacterial Composite Layers on Ti: Role of ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Roguska A.

2016-03-01

Full Text Available Problem of Post-operative infections of implant materials caused by bacterial adhesion to their surfaces is very serious. Enhancement of antibacterial properties is potentially beneficial for biomaterials value. Therefore, the metallic and metallic oxide nanoparticles attract particular attention as antimicrobial factors. The aim of this work was to create nanotubular (NT oxide layers on Ti with the addition of ZnO nanoparticles, designed for antibacterial biomedical coatings. Antimicrobial activities of titanium, TiO2 NT and ZnO/TiO2 NT surfaces were evaluated against bacterial strain typical for orthopaedic infections: S. epidermidis. TiO2 NT alone killed the free bacterial cells significantly but promoted their adhesion to the surfaces. The presence of moderate amount of ZnO nanoparticles significantly reduced the S. epidermidis cells adhesion and viability of bacterial cells in contact with modified surfaces. However, higher amount of loaded nanoZnO showed the reduced antimicrobial properties than the medium amount, suggesting the overdose effect.

Facing-target sputtering deposition of ZnO films with Pt ultra-thin layers for gas-phase photocatalytic application

International Nuclear Information System (INIS)

Zhang Zhonghai; Hossain, Md. Faruk.; Arakawa, Takuya; Takahashi, Takakazu

2010-01-01

In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of 1.0 Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology of the as-deposited films. The Pt ultra-thin layer, ∼2 nm thick, is deposited on the surface of ZnO film by dc diode sputtering with a mesh mask controlling the coated area. The photocatalytic activity of ZnO films and Pt-ZnO films is evaluated by decomposition of methanol under UV-vis light irradiation. The variation of photocatalytic activity depends on the ratios of Ar to O 2 , which is mainly attributed to the different grain size and carrier mobility. Though the pure ZnO film normally shows a low gas-phase photocatalytic activity, its activity is significantly enhanced by depositing Pt ultra-thin layer.

Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

International Nuclear Information System (INIS)

Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

2014-01-01

Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

International Nuclear Information System (INIS)

Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

2014-01-01

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

Photovoltaic properties of undoped ZnO thin films prepared by the spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

2009-07-01

Zinc oxide (ZnO) can be used as a window material, transparent electrode and active layer in different types of solar cells, UV emitters, and UV sensors. In addition to being low cost, ZnO is more abundant than indium tin oxide. ZnO is non toxic and has a high chemical stability in reduction environments. When ZnO films are made without any intentional doping, they exhibit n-type conductivity. ZnO thin films can be prepared by reactive sputtering, laser ablation, chemical-vapour deposition, laser molecular-beam epitaxy, thermal evaporation, sol-gel, atomic layer deposition and spray pyrolysis, with the latter being simple, inexpensive and adaptable to large area depositions. In this work ZnCl{sub 2} was used as a source of Zn where it was dissolved in distilled water. The structural, electrical and optical properties of the films were investigated due to their important characteristic for solar cell applications. Polycrystalline ZnO thin films were deposited on glass substrate by spray pyrolysis using a home-made spraying system at substrate temperature of 450 degrees C. The films were characterized by recording and analyzing their I-V plots, their transmittance, X-ray diffraction and SEM micrographs. There resistivity was found to be about 200 ohms per cm and their bandgap energy about 3.27 eV. X-ray diffraction patterns revealed that the films have a hexagonal wurtzite structure and are highly ordered with a preferential orientation (002). SEM images revealed that the substrates are continuously covered and the surface of the film is uniform. 16 refs., 4 figs.

Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

International Nuclear Information System (INIS)

Saad, M.; Kassis, A.

2009-05-01

ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

2015-09-30

Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

Development of novel control system to grow ZnO thin films by reactive evaporation

Directory of Open Access Journals (Sweden)

Gerardo Gordillo

2016-07-01

Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

Directory of Open Access Journals (Sweden)

Adib Abou Chaaya

2013-10-01

Full Text Available A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD deposited ultrathin ZnO films in optical sensors and biosensors.

Carbon-coated ZnO mat passivation by atomic-layer-deposited HfO2 as an anode material for lithium-ion batteries.

Science.gov (United States)

Jung, Mi-Hee

2017-11-01

ZnO has had little consideration as an anode material in lithium-ion batteries compared with other transition-metal oxides due to its inherent poor electrical conductivity and large volume expansion upon cycling and pulverization of ZnO-based electrodes. A logical design and facile synthesis of ZnO with well-controlled particle sizes and a specific morphology is essential to improving the performance of ZnO in lithium-ion batteries. In this paper, a simple approach is reported that uses a cation surfactant and a chelating agent to synthesize three-dimensional hierarchical nanostructured carbon-coated ZnO mats, in which the ZnO mats are composed of stacked individual ZnO nanowires and form well-defined nanoporous structures with high surface areas. In order to improve the performance of lithium-ion batteries, HfO 2 is deposited on the carbon-coated ZnO mat electrode via atomic layer deposition. Lithium-ion battery devices based on the carbon-coated ZnO mat passivation by atomic layer deposited HfO 2 exhibit an excellent initial discharge and charge capacities of 2684.01 and 963.21mAhg -1 , respectively, at a current density of 100mAg -1 in the voltage range of 0.01-3V. They also exhibit cycle stability after 125 cycles with a capacity of 740mAhg -1 and a remarkable rate capability. Copyright © 2017 Elsevier Inc. All rights reserved.

Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

Energy Technology Data Exchange (ETDEWEB)

Kumar, P. Suresh; Raj, A. Dhayal [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.co [Department of Nanoscience and Technology, Bharathiar University, Coimbatore-641046 (India); Nataraj, D. [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India)

2010-10-01

In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

International Nuclear Information System (INIS)

Kumar, P. Suresh; Raj, A. Dhayal; Mangalaraj, D.; Nataraj, D.

2010-01-01

In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

Growing vertical ZnO nanorod arrays within graphite: efficient isolation of large size and high quality single-layer graphene.

Science.gov (United States)

Ding, Ling; E, Yifeng; Fan, Louzhen; Yang, Shihe

2013-07-18

We report a unique strategy for efficiently exfoliating large size and high quality single-layer graphene directly from graphite into DMF dispersions by growing ZnO nanorod arrays between the graphene layers in graphite.

Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yan, T.; Lu, C.-Y.J.; Schuber, R.; Chang, L.; Schaadt, D.M.; Chou, M.M.C.; Ploog, K.H.; Chiang, C.-M.

2015-01-01

Highlights: • ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10 10 cm −2 ) as compared to those grown on LiAlO 2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

Energy Technology Data Exchange (ETDEWEB)

Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun [Inje University, Gimhae (Korea, Republic of); Lee, Won Jae [Dong-Eui University, Busan (Korea, Republic of); Chang, Ji Ho [Korea Maritime University, Busan (Korea, Republic of); Son, Chang Sik [Silla University, Busan (Korea, Republic of); Choi, Hee Lack [Pukyong National University, Busan (Korea, Republic of)

2012-06-15

Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

International Nuclear Information System (INIS)

Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun; Lee, Won Jae; Chang, Ji Ho; Son, Chang Sik; Choi, Hee Lack

2012-01-01

Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

Characterization of Optic Properties ZnO:Al Thin Film on Glass Substrate for Solar Cell Window

International Nuclear Information System (INIS)

Wiryoadi; Yunanto; Bambang Siswanto; Sri Sulamdari; Sudjatmoko

2002-01-01

It has been characterized a ZnO:Al thin film growth using sputtering technique for solar cell window. The aims of this research is to get a ZnO:Al thin film that can be used as a TCO (Transparent Conducting Oxide) on amorphous silicon solar cell. To get an optimum properties, deposition process has been done for various parameters, such as composition/concentration of Al, substrate temperature, gas pressure and deposition time. Based on experiments result, it is found that the optimum result was achieved at temperature 450 o C, gas pressure 6 x 10 -2 torr and time 1.5 hours. From optical properties (transmittance) measurements using UV-vis, it was found that the optimum results was achieved at temperature 450 o C. At this conditions, wave length (500 - 800) nm, the transmittance was (50 - 82) %, at pressure 6 x 10 -2 torr the transmittance was (50 - 80) % and at deposition time 1.5 hours was (49 - 81) %. For ZnO thin film, was at wave length (500 - 800) nm, the transmittance was (78 - 80) %. From micro structure analysis using SEM, it was found that the thickness layer of ZnO was 1.5 μm and 1.3 μm for ZnO: Al. While from surface morphology it was found that for ZnO thin layer the grains was distributed homogeneously, while for ZnO: Al the grains was distributed unhomogeneously. (author)

Growth of vertically aligned ZnO nanorods using textured ZnO films

Directory of Open Access Journals (Sweden)

Meléndrez Manuel

2011-01-01

Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

Electrosynthesis and characterization of ZnO nanoparticles as inorganic component in organic thin-film transistor active layers

International Nuclear Information System (INIS)

Picca, Rosaria Anna; Sportelli, Maria Chiara; Hötger, Diana; Manoli, Kyriaki; Kranz, Christine; Mizaikoff, Boris; Torsi, Luisa; Cioffi, Nicola

2015-01-01

Highlights: • PSS-capped ZnO NPs were synthesized via a green electrochemical-thermal method • The influence of electrochemical conditions and temperature was studied • Spectroscopic data show that PSS functionalities are retained in the annealed NPs • Nanostructured ZnO improved the performance of P3HT-based thin film transistors - Abstract: ZnO nanoparticles have been prepared via a green electrochemical synthesis method in the presence of a polymeric anionic stabilizer (poly-sodium-4-styrenesulfonate, PSS), and then applied as inorganic component in poly-3-hexyl-thiophene thin-film transistor active layers. Different parameters (i.e. current density, electrolytic media, PSS concentration, and temperature) influencing nanoparticle synthesis have been studied. The resulting nanomaterials have been investigated by transmission electron microscopy (TEM) and spectroscopic techniques (UV-Vis, infrared, and x-ray photoelectron spectroscopies), assessing the most suitable conditions for the synthesis and thermal annealing of nanostructured ZnO. The proposed ZnO nanoparticles have been successfully coupled with a poly-3-hexyl-thiophene thin-film resulting in thin-film transistors with improved performance.

Enhanced optical band-gap of ZnO thin films by sol-gel technique

Energy Technology Data Exchange (ETDEWEB)

Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.; Mahesh, H. M., E-mail: hm-mahesh@rediffmail.com [Thin Film and Solar Cell Laboratory, Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore -560056 (India)

2016-05-06

Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

KAUST Repository

Jagadamma, Lethy Krishnan; Al-Senani, Mohammed; Amassian, Aram

2015-01-01

The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems

SIMS depth profiling of rubber-tyre cord bonding layers prepared using 64Zn depleted ZnO

International Nuclear Information System (INIS)

Fulton, W.S.; Sykes, D.E.; Smith, G.C.

2006-01-01

Zinc oxide and copper/zinc sulphide layers are formed during vulcanisation and moulding of rubber to brass-coated steel tyre reinforcing cords. Previous studies have described how zinc diffuses through the rubber-brass interface to form zinc sulphide, and combines with oxygen to create zinc oxide during dezincification. The zinc is usually assumed to originate in the brass of the tyre cord, however, zinc oxide is also present in the rubber formulation. We reveal how zinc from these sources is distributed within the interfacial bonding layers, before and after heat and humidity ageing. Zinc oxide produced using 64 Zn-isotope depleted zinc was mixed in the rubber formulation in place of the natural ZnO and the zinc isotope ratios within the interfacial layers were followed by secondary ion mass spectroscopy (SIMS) depth profiling. Variations in the relative ratios of the zinc isotopes during depth profiling were measured for unaged, heat-aged and humidity-aged wire samples and in each case a relatively large proportion of the zinc incorporated into the interfacial layer as zinc sulphide was shown to have originated from ZnO in the rubber compound

Synthesis of ZnO nanowire arrays on ZnO−TiO{sub 2} mixed oxide seed layer for dye sensitized solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Marimuthu, T. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Anandhan, N., E-mail: anandhan_kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Thangamuthu, R. [Electrochemical Materials Science Division, CSIR-Central Electrochemical Research Institute, Karaikudi (India); Mummoorthi, M. [Advanced Materials and Thin Film Physics Lab, Department of Physics, Alagappa University, Karaikudi (India); Ravi, G. [Photonic Crystal Lab, Department of Physics, Alagappa University, Karaikudi (India)

2016-08-25

ZnO nanowire arrays (NWAs) were synthesized on ZnO−TiO{sub 2} mixed oxide seeded FTO conducting glass plate by two-step sol-gel and hydrothermal method, respectively. X-ray diffraction patterns reveal the presence of mixed and hexagonal phases in seed layer and NWAs, respectively. Scanning electron microscope images showed that the FTO glass plate is uniformly covered with grains and a few nanorods in seed layer and dense NWAs are vertically grown on the seed layer. The hexagonal structure and high crystal quality have been confirmed by micro Raman spectra. Photoluminescence spectra also present that NWAs have high crystal quality and less atomic defects. UV spectra indicate that NWAs are absorbed more dye molecules and it has the band gap equal to bulk material. The efficiency of ZnO−TiO{sub 2} mixed oxide seed layer and ZnO NWAs is found to be 0.56 and 0.84% respectively. Electrochemical impedance spectra reveal that NWAs DSSC has high charge transfer recombination resistance than the seed layer DSSC. - Highlights: • ZnO nanowire arrays were synthesized by two-step sol-gel and hydrothermal method. • The crystal structure and crystalline quality of films are confirmed by Raman spectra. • The emission properties of films are investigated by photoluminescence spectra. • ZnO nanowire arrays (NWAs) have higher charge transfer recombination resistance. • The conversion efficiency of the seed layer and NWAs is to be 0.56 and 0.84%.

Layered zinc hydroxide salts: Delamination, preferred orientation of hydroxide lamellae, and formation of ZnO nanodiscs

Czech Academy of Sciences Publication Activity Database

Demel, Jan; Pleštil, Josef; Bezdička, Petr; Janda, Pavel; Klementová, Mariana; Lang, Kamil

2011-01-01

Roč. 360, č. 2 (2011), s. 532-539 ISSN 0021-9797 R&D Projects: GA MŠk ME09058; GA ČR GAP207/10/1447 Institutional research plan: CEZ:AV0Z40320502; CEZ:AV0Z40500505; CEZ:AV0Z40400503 Keywords : layered zinc hydroxide * delamination * exfoliation * hydroxide layer * ZnO Subject RIV: CA - Inorganic Chemistry Impact factor: 3.070, year: 2011

Active Layer Spin Coating Speed Dependence of Inverted Organic Solar Cell Based on Eosin-Y-Coated ZnO Nanorod Arrays

Science.gov (United States)

Ginting, R. T.; Yap, C. C.; Yahaya, M.; Fauzia, V.; Salleh, M. M.

2013-04-01

The active layer spin coating speed dependence of the performance of inverted organic solar cells (OSCs) based on Eosin-Y-coated ZnOnanorods has been investigated. An active layer consisted of poly(2-methoxy-5-(2'-ethyl)-hexyloxy-p-phenylenevinylene) (MEH-PPV) as donor and phenyl-c61-butyric acid methyl ester (PCBM) as acceptor was employed, whereas ZnO nanorods were utilized as electron transporting layer. The active layer was deposited on top of Eosin-Y-coated ZnO nanorods with various spin coating speeds (1000-4000 rpm). Inverted OSCs with a structure of FTO/Eosin-Y-coated ZnO nanorods/MEH-PPV:PCBM /Ag were characterized through the current density-voltage (J-V) measurement under illumination intensity of 100 mW/cm2. Based on the investigation, the short circuit current density (Jsc) and the power conversion efficiency (PCE) enhanced significantly, where as fill factor slightly increased with spin coating speed. The two-diode equivalent model was found to fit the experimental J-V curves very well. The optimum PCE of 1.18 ± 0.07% was achieved at the highest spin coating speed of 4000 rpm, as a result of the decrement of diffusion current density (Jdiff), recombination current density (Jrec), and ideality factor, thus further confirms the strong built-in electric field in thinner photoactive layer.

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

2016-03-31

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

Atomic layer epitaxy of ZnO for applications in molecular beam epitaxy growth of GaN and InGaN

International Nuclear Information System (INIS)

Godlewski, M.; Szczerbakow, A.; Ivanov, V. Yu.; Barski, A.; Goldys, E.M.

2000-01-01

We report the successful atomic layer epitaxy growth of thin ZnO films and their use for GaN and InGaN epitaxy. The properties of ZnO epilayers, obtained by four different procedures, are analysed, as well as of GaN and InGaN films grown on ZnO-coated Si and GaAs by MBE. (author)

Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

Directory of Open Access Journals (Sweden)

Peng Wang

2012-06-01

Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

Energy Technology Data Exchange (ETDEWEB)

Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

2013-05-02

The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

2016-01-01

Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

Science.gov (United States)

Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

2017-07-05

To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

Science.gov (United States)

Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

2017-07-01

Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

Science.gov (United States)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

Energy Technology Data Exchange (ETDEWEB)

Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad; Skopin, Evgenii; Cantelli, Valentina; Ouled, Toufik; Boichot, Raphaël; Crisci, Alexandre; Lay, Sabine; Richard, Marie-Ingrid; Thomas, Olivier; Deschanvres, Jean-Luc; Renevier, Hubert; Fong, Dillon; Ciatto, Gianluca

2017-03-20

ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.

Improvement of inverted organic solar cells using acetic acid as an additive for ZnO layer processing

Directory of Open Access Journals (Sweden)

Yang Li

2018-02-01

Full Text Available In this work, we used acetic acid as an additive for the preparation of ZnO layers and improved the performance of poly{4,8-bis[(2-ethylhexyl-oxy]benzo[1,2-b:4,5-b’] dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexylcarbonyl]thieno[3,4-b]thiophene- 4,6-diyl} (PTB7-based inverted organic solar cells. The addition of acetic acid to the ZnO precursor solution improved the transparency and conductivity of the sol-gel-synthesized ZnO film, by increasing the grain size of the film. Accordingly, the power conversion efficiency (PCE of the organic solar cells was improved from 6.42% to 7.55%, which was mainly caused by the enhanced current density and fill factor. The best sample demonstrated a high PCE of 7.85% with negligible hysteresis and good stability. Our results indicate that using acetic acid as an additive for the preparation of ZnO is a simple and effective way of fabricating high-performance inverted organic solar cells.

Improvement of inverted organic solar cells using acetic acid as an additive for ZnO layer processing

Science.gov (United States)

Li, Yang; Liu, Yawen; Liu, Zhihai; Xie, Xiaoyin; Lee, Eun-Cheol

2018-02-01

In this work, we used acetic acid as an additive for the preparation of ZnO layers and improved the performance of poly{4,8-bis[(2-ethylhexyl)-oxy]benzo[1,2-b:4,5-b'] dithiophene-2,6-diyl-alt-3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophene- 4,6-diyl} (PTB7)-based inverted organic solar cells. The addition of acetic acid to the ZnO precursor solution improved the transparency and conductivity of the sol-gel-synthesized ZnO film, by increasing the grain size of the film. Accordingly, the power conversion efficiency (PCE) of the organic solar cells was improved from 6.42% to 7.55%, which was mainly caused by the enhanced current density and fill factor. The best sample demonstrated a high PCE of 7.85% with negligible hysteresis and good stability. Our results indicate that using acetic acid as an additive for the preparation of ZnO is a simple and effective way of fabricating high-performance inverted organic solar cells.

Effect of Different HTM Layers and Electrical Parameters on ZnO Nanorod-Based Lead-Free Perovskite Solar Cell for High-Efficiency Performance

Directory of Open Access Journals (Sweden)

Farhana Anwar

2017-01-01

Full Text Available Simulation has been done using SCAPS-1D to examine the efficiency of CH3NH3SnI3-based solar cells including various HTM layers such as spiro-OMeTAD, Cu2O, and CuSCN. ZnO nanorod array has been considered as an ETM layer. Device parameters such as thickness of the CH3NH3SnI3 layer, defect density of interfaces, density of states, and metal work function were studied. For optimum parameters of all three structures, efficiency of 20.21%, 20.23%, and 18.34% has been achieved for spiro-OMeTAD, Cu2O, and CuSCN, respectively. From the simulations, an alternative lead-free perovskite solar cell is introduced with the CH3NH3SnI3 absorber layer, ZnO nanorod ETM layer, and Cu2O HTM layer.

Influence of substrate temperature and Zn-precursors on atomic layer deposition of polycrystalline ZnO films on glass

International Nuclear Information System (INIS)

Makino, Hisao; Miyake, Aki; Yamada, Takahiro; Yamamoto, Naoki; Yamamoto, Tetsuya

2009-01-01

Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth

Sol-gel derived ZnO as an electron transport layer (ETL) for inverted organic solar cells

Science.gov (United States)

Tiwari, D. C.; Dwivedi, Shailendra Kumar; Dipak, Phukhrambam; Chandel, Tarun; Sharma, Rishi

2017-05-01

In this work, we present the study of the fabrication process of the sol-gel derived zinc oxide (ZnO) as an electron transport layer (ETL.). The solution processed inverted bulk heterojunction organic solar cells based on a thin film blend of poly (3-hexylthiophene 2, 5-diyl) and [6,6]-phenyl-C61-butyric acid methyl ester is prepared. ZnO thin films are annealed at different temperature to optimize the solar cell performance and their characterization for their structural and optical properties are carried out. We have observed Voc=70mV, Jsc=1.33 µA/cm2 and FF=26% from the inverted heterojunction solar cell.

The Effect of Post-Baking Temperature and Thickness of ZnO Electron Transport Layers for Efficient Planar Heterojunction Organometal-Trihalide Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Kun-Mu Lee

2017-11-01

Full Text Available Solution-processed zinc oxide (ZnO-based planar heterojunction perovskite photovoltaic device is reported in this study. The photovoltaic device benefits from the ZnO film as a high-conductivity and high-transparent electron transport layer. The optimal electron transport layer thickness and post-baking temperature for ZnO are systematically studied by scanning electron microscopy, photoluminescence and time-resolved photoluminescence spectroscopy, and X-ray diffraction. Optimized perovskite solar cells (PSCs show an open-circuit voltage, a short-circuit current density, and a fill factor of 1.04 V, 18.71 mA/cm2, and 70.2%, respectively. The highest power conversion efficiency of 13.66% was obtained when the device was prepared with a ZnO electron transport layer with a thickness of ~20 nm and when post-baking at 180 °C for 30 min. Finally, the stability of the highest performance ZnO-based PSCs without encapsulation was investigated in detail.

ZnO quantum dots–decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

International Nuclear Information System (INIS)

Wu, Jyh Ming; Tsay, Li-Yi

2015-01-01

We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3–5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O–H bond and Zn"2"+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn"2"+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions. (paper)

Chemical-bath ZnO buffer layer for CuInS{sub 2} thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A.; Weber, M.; Scheer, R.; Lewerenz, H.J. [Hahn-Meitner-Institut, Abt. Grenzflaechen, Bereich Physikalische Chemie, Glienicker Strasse 100, D-14109 Berlin (Germany)

1998-07-13

ZnO buffer layers were grown by a chemical-bath deposition (CBD) in order to improve the interface quality in p-CuInS{sub 2} based solar cells, to improve the light transmission in the blue wavelength region, but also as an alternative to eliminate the toxic cadmium. The process consists of immersion of different substrates (glass, CIS) in a dilute solution of tetraamminezinc II, [Zn(NH{sub 2}){sub 4}]{sup 2+}, complex at 60-95C. During the growth process, a homogeneous growth mechanism which proceeds by the sedimentation of a mixture of ZnO and Zn(OH){sub 2} clusters formed in solution, competes with the heterogeneous growth mechanism. The mechanism consists of specific adsorption of a complex Zn(II) followed by a chemical reaction. The last process of growth results in thin, hard, adherent and specularly reflecting films. The characterization of the deposited CBD-ZnO layers was performed by X-ray diffraction (XRD), optical transmittance, scanning electron microscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The as-deposited films on glass show hexagonal zincite structure with two preferred orientations (1 0 0) and (1 0 1). High optical transmittance up to 80% in the near-infrared and part of the visible region was observed. The low growth rate of the films on CIS suggests an atomic layer-by-layer growth process.The device parameters and performance are compared to heterojunction with a standard CdS buffer layer

Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

Science.gov (United States)

Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

2016-11-02

Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

Electrodeposition of ZnO nano-wires lattices with a controlled morphology; Electrodepot de reseaux de nanofils de ZnO a morphologie controlee

Energy Technology Data Exchange (ETDEWEB)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, UPR 209, 94 - Thiais (France)

2006-07-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO{sub 2}. Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

Hexagonal ZnO porous plates prepared from microwave synthesized layered zinc hydroxide sulphate via thermal decomposition

Energy Technology Data Exchange (ETDEWEB)

Machovsky, Michal, E-mail: machovsky@ft.utb.cz [Centre of Polymer Systems, University Institute, Tomas Bata University in Zlin, Nad Ovcirnou 3685, 760 01 Zlin (Czech Republic); Polymer Centre, Faculty of Technology, Tomas Bata University in Zlin, Nam. T.G. Masaryka 275, 762 72 Zlin (Czech Republic); Kuritka, Ivo, E-mail: ivo@kuritka.net [Centre of Polymer Systems, University Institute, Tomas Bata University in Zlin, Nad Ovcirnou 3685, 760 01 Zlin (Czech Republic); Polymer Centre, Faculty of Technology, Tomas Bata University in Zlin, Nam. T.G. Masaryka 275, 762 72 Zlin (Czech Republic); Sedlak, Jakub, E-mail: j1sedlak@ft.utb.cz [Centre of Polymer Systems, University Institute, Tomas Bata University in Zlin, Nad Ovcirnou 3685, 760 01 Zlin (Czech Republic); Polymer Centre, Faculty of Technology, Tomas Bata University in Zlin, Nam. T.G. Masaryka 275, 762 72 Zlin (Czech Republic); Pastorek, Miroslav, E-mail: pastorek@ft.utb.cz [Centre of Polymer Systems, University Institute, Tomas Bata University in Zlin, Nad Ovcirnou 3685, 760 01 Zlin (Czech Republic); Department of Polymer Engineering, Faculty of Technology, Tomas Bata University in Zlin, Nam. T.G. Masaryka 275, 762 72 Zlin (Czech Republic)

2013-10-15

Graphical abstract: - Highlights: • Zinc hydroxy sulphate was synthesized in 3 min via microwave hydrothermal route. • Zinc hydroxy sulphate was converted into mesh like porous ZnO by calcining at 900°. • The process of transformation is topotactic. - Abstract: Layered zinc hydroxide sulphate (ZHS) was prepared by microwave-assisted hydrothermal precipitation of zinc sulphate monohydrate with hexamethylenetetramine. Under ambient conditions, the structure of ZHS determined by X-ray diffraction (XRD) was found to be a mixture of zinc hydroxide sulphate pentahydrate Zn{sub 4}SO{sub 4}(OH){sub 6}·5H{sub 2}O and tetrahydrate Zn{sub 4}SO{sub 4}(OH){sub 6}·4H{sub 2}O. Fourier transform infrared (FTIR) spectroscopy was used for characterization of the prepared materials. Based on the interpretation of ZHS's thermal decomposition profile obtained by thermogravimetric analysis, ZnO of high purity was prepared by calcination at 900 °C for 2 h. The structure of the resulting ZnO was confirmed by the XRD. The morphology examination by scanning electron microscopy revealed a porous mesh-like ZnO structure developed from the ZHS precursor at the expense of mass removal due to the release of water and sulphate during the calcination.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

Science.gov (United States)

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

ZnO nanostructures directly grown on paper and bacterial cellulose substrates without any surface modification layer.

Science.gov (United States)

Costa, Saionara V; Gonçalves, Agnaldo S; Zaguete, Maria A; Mazon, Talita; Nogueira, Ana F

2013-09-21

In this report, hierarchical ZnO nano- and microstructures were directly grown for the first time on a bacterial cellulose substrate and on two additional different papers by hydrothermal synthesis without any surface modification layer. Compactness and smoothness of the substrates are two important parameters that allow the growth of oriented structures.

Synthesis and characterization of ZnO nanostructures on noble-metal coated substrates

Energy Technology Data Exchange (ETDEWEB)

Dikovska, A.Og. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia 1784 (Bulgaria); Atanasova, G.B. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia (Bulgaria); Avdeev, G.V. [Rostislaw Kaischew Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia (Bulgaria); Nedyalkov, N.N. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia 1784 (Bulgaria)

2016-06-30

Highlights: • ZnO nanostructures were fabricated on Au–Ag alloy coated silicon substrates by applying pulsed laser deposition. • Morphology of the ZnO nanostructures was related to the Au–Ag alloy content in the catalyst layer. • Increasing the Ag content in Au–Ag catalyst layer changes the morphology of the ZnO nanostructures from nanorods to nanobelts. - Abstract: In this work, ZnO nanostructures were fabricated on noble-metal (Au, Ag and Au–Ag alloys) coated silicon substrates by applying pulsed laser deposition. The samples were prepared at a substrate temperature of 550 °C, an oxygen pressure of 5 Pa, and a laser fluence of 2 J cm{sup −2} – process parameters usually used for deposition of smooth and dense thin films. The metal layer's role is substantial for the preparation of nanostructures. Heating of the substrate changed the morphology of the metal layer and, subsequently, nanoparticles were formed. The use of different metal particles resulted in different morphologies and properties of the ZnO nanostructures synthesized. The morphology of the ZnO nanostructures was related to the Au–Ag alloy's content of the catalyst layer. It was found that the morphology of the ZnO nanostructures evolved from nanorods to nanobelts as the ratio of Au/Ag in the alloy catalyst was varied. The use of a small quantity of Ag in the Au–Ag catalyst (Au{sub 3}Ag) layer resulted predominantly in the deposition of ZnO nanorods. A higher Ag content in the catalyst alloy (AuAg{sub 2}) layer resulted in the growth of a dense structure of ZnO nanobelts.

Improving photoelectrochemical performance on quantum dots co-sensitized TiO_2 nanotube arrays using ZnO energy barrier by atomic layer deposition

International Nuclear Information System (INIS)

Zeng, Min; Zeng, Xi; Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen; Lin, Shiwei

2016-01-01

Graphical abstract: - Highlights: • The length of TNTAs has a balance between the charge recombination and the QDs loading. • The introduction of ZnO interlayer by ALD could improve the QDs absorption. • The optimal thickness of ZnO interlayer is 1.5 nm prepared by 10 cycles ALD. - Abstract: PbS and CdS quantum dots (QDs) have been deposited onto TiO_2 nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO_2 nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm"−"2, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm"−"2 and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

Annealing effects of ZnO nanorods on dye-sensitized solar cell efficiency

Energy Technology Data Exchange (ETDEWEB)

Chung, Jooyoung; Lee, Juneyoung [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.k [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of)

2010-06-01

Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanorod arrays vertically grown on fluorine-doped tin oxide (FTO) glass using a low-temperature hydrothermal method. When the ZnO seed layer was annealed, greater DSSC efficiency was obtained. This may be attributed to the improvement of adhesion between the FTO and the seed layer and the corresponding effective growth of the ZnO nanorods. The DSSCs fabricated using ZnO nanorods which underwent annealing were more efficient than those that did not undergo annealing. The ZnO nanorods which were annealed in N{sub 2}/H{sub 2} or O{sub 2} had increased dye loadings due to higher OH concentrations on the hydrophilic surface, which contributed to the improved DSSC efficiency. The fill factor increased after the annealing of the ZnO nanorods, potentially due to the improved crystallinity of the ZnO nanorods. In this study, annealing of both the seed layer and the ZnO nanorods resulted in the greatest DSSC efficiency.

Growth of novel ZnO nanostructures by soft chemical routes

International Nuclear Information System (INIS)

Saravana Kumar, R.; Sathyamoorthy, R.; Matheswaran, P.; Sudhagar, P.; Kang, Yong Soo

2010-01-01

Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

Growth of novel ZnO nanostructures by soft chemical routes

Energy Technology Data Exchange (ETDEWEB)

Saravana Kumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.co [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sudhagar, P.; Kang, Yong Soo [Energy Materials Laboratory, WCU Program Department of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2010-09-10

Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

Efficient Color-Stable Inverted White Organic Light-Emitting Diodes with Outcoupling-Enhanced ZnO Layer.

Science.gov (United States)

Zhao, Xin-Dong; Li, Yan-Qing; Xiang, Heng-Yang; Zhang, Yi-Bo; Chen, Jing-De; Xu, Lu-Hai; Tang, Jian-Xin

2017-01-25

Inverted organic light-emitting diode (OLED) has attracted extensive attention due to the demand in active-matrix OLED display panels as its geometry enables the direct connection with n-channel transistor backplane on the substrate. One key challenge of high-performance inverted OLED is an efficient electron-injection layer with superior electrical and optical properties to match the indium tin oxide cathode on substrate. We here propose a synergistic electron-injection architecture using surface modification of ZnO layer to simultaneously promote electron injection into organic emitter and enhance out-coupling of waveguided light. An efficient inverted white OLED is realized by introducing the nanoimprinted aperiodic nanostructure of ZnO for broadband and angle-independent light out-coupling and inserting an n-type doped interlayer for energy level tuning and injection barrier lowering. As a result, the optimized inverted white OLEDs have an external quantum efficiency of 42.4% and a power efficiency of 85.4 lm W 1- , which are accompanied by the superiority of angular color stability over the visible wavelength range. Our results may inspire a promising approach to fabricate high-efficiency inverted OLEDs for large-scale display panels.

Tunable, flexible antireflection layer of ZnO nanowires embedded in PDMS.

Science.gov (United States)

Kim, Min Kyu; Yi, Dong Kee; Paik, Ungyu

2010-05-18

In this article, we report the fabrication of ordered hybrid structures composed of ZnO nanowires and a polymeric matrix with a polymer precursor infiltrating the nanowire arrays. The antireflective properties of the resulting ZnO nanowire-embedded polydimethylsiloxane composite (ZPC) were investigated at various ZnO nanowire lengths and ZPC bending angles. Interestingly, we found that whereas the antireflective properties showed a strong dependence on the length of the embedded ZnO nanowires in PDMS, the bending of ZPC has little effect on the antireflective properties.

Influence of seed layer treatment on ZnO growth morphology and their device performance in dye-sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Kumar, R. Saravana [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sudhagar, P. [Energy Materials Laboratary, WCU Program Department of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.com [PG and Research, Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029 (India); Kang, Yong Soo, E-mail: kangys@hanyang.ac.kr [Energy Materials Laboratary, WCU Program Department of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2010-09-15

The surface modification of the ZnO seed layer by ultrasonic mediated rinsing (UMR) was realized as an efficient tool for growing highly branched hierarchical ZnO nanorods through multistage approach. The hierarchical ZnO nanostructure achieved through UMR approach was performed as the photoanodes in dye-sensitized solar cells (DSSCs). The DSSC based on the novel branched network resulted in energy conversion efficiency ({eta}) of 1.1% (J{sub sc} = 4.7 mA cm{sup -2}). The improved device performance was ascribed to the (a) high internal surface area for efficient dye adsorption, (b) rapid electron pathway for charge transport from ZnO to transparent conducting oxide (TCO) substrate and (c) producing random multiple scattering of the light within the hierarchical network leading to photon localization, thereby increasing the probability of the interaction between the photons and the dye molecules of the branched network. The beneficial effect of the UMR approach was distinguished by fabricating DSSCs based on randomly oriented ZnO nanorods prepared by conventional rinsing (CR), which offered lower conversion efficiency {eta} = 0.7% (J{sub sc} = 3.8 mA cm{sup -2}). The exploration of novel hierarchical ZnO nanorods grown in the present work by the low temperature solution growth techniques may pave way to bring out photoanode material on flexible substrates for the fast growing DSSCs devices.

Growth of thin film containing high density ZnO nanorods with low temperature calcinated seed layer

Science.gov (United States)

Panda, Rudrashish; Samal, Rudranarayan; Khatua, Lizina; Das, Susanta Kumar

2018-05-01

In this work we demonstrate the growth of thin film containing high density ZnO nanorods by using drop casting of the seed layer calcinated at a low temperature of 132 °C. Chemical bath deposition (CBD) method is used to grow the nanorods. X-ray diffraction (XRD) analysis and Field Emission Scanning Electron Microscopy (FESEM) are performed for the structural and morphological characterizations of the nanorods. The average diameter and length of nanorods are found to be 33 nm and 270 nm respectively. The bandgap of the material is estimated to be 3.2 eV from the UV-Visible absorption spectroscopy. The reported method is much more cost-effective and can be used for growth of ZnO nanorods for various applications.

ZnO layers prepared by spray pyrolysis

Science.gov (United States)

Messaoudi, C.; Abd-Lefdil, S.; Sayah, D.; Cadene, M.

1998-02-01

Highly transparent undoped and indium doped ZnO thin films have been grown on glass substrates by using the spray pyrolysis process. Conditions of preparation have been optimized to get good quality and reproducible films with required properties. Polycrystalline films with an hexagonal Wurtzite-type structure were easily obtained under the optimum spraying conditions. Both of samples have shown high transmission coefficient in the visible and infrared wavelength range with sharp absorption edge around 380 nm which closely corresponds to the intrinsic band-gap of ZnO (3.2 eV). Orientation and crystallites size were remarkably modified by deposition temperature and indium doping. Des couches minces de ZnO, hautement transparentes, non dopées et dopées à l'indium ont été élaborées sur un substrat en verre par le procédé de pulvérisation chimique réactive spray. Les conditions de préparation ont été optimisées pour l'obtention de couches reproductibles, de bonne qualité et ayant les propriétés requises. Des films polycristallins, présentant une structure hexagonale de type Wurtzite, ont été aisément obtenus dans les conditions optimales de pulvérisation. Tous les échantillons ont présenté un coefficient de transmission élevé dans le domaine du visible et du proche infrarouge, avec une absorption brutale au voisinage de 380 nm, correspondant au gap optique du ZnO (3,2 eV). L'orientation et la taille des cristallites ont été remarquablement modifiées par la température du dépôt et par le dopage à l'indium.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

2016-12-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

International Nuclear Information System (INIS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-01-01

Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

Improving photoelectrochemical performance on quantum dots co-sensitized TiO{sub 2} nanotube arrays using ZnO energy barrier by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Zeng, Min [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Zeng, Xi [College of Chemistry and Chemical Engineering, Yunnan Normal University, Kunming, 650500 (China); Peng, Xiange; Zhu, Zhuo; Liao, Jianjun; Liu, Kai; Wang, Guizhen [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China); Lin, Shiwei, E-mail: linsw@hainu.edu.cn [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, College of Materials and Chemical Engineering, Hainan University, Haikou 570228 (China)

2016-12-01

Graphical abstract: - Highlights: • The length of TNTAs has a balance between the charge recombination and the QDs loading. • The introduction of ZnO interlayer by ALD could improve the QDs absorption. • The optimal thickness of ZnO interlayer is 1.5 nm prepared by 10 cycles ALD. - Abstract: PbS and CdS quantum dots (QDs) have been deposited onto TiO{sub 2} nanotube arrays (TNTAs) in turn via a sonication-assisted successive ionic layer adsorption and reaction method. This method could uniformly decorate TNTAs with QDs, avoiding QDs aggregation at the mouth of TiO{sub 2} nanotube. The loading amounts of QDs on TNTAs could be controlled by adjusting the TNTAs length. Under one sun illumination, the QDs co-sensitized TNTAs (TNTAs/QDs) with the length of about 2.4 μm displayed the highest photocurrent of 4.32 mA cm{sup −2}, which is 27 times higher than that of the bare TNTAs. Introduction of a thin ZnO energy barrier by atomic layer deposition (ALD) between the TNTAs and QDs can further improve the photocurrent of TNTAs/QDs. And the TNTAs/QDs with 10 ALD cycles of ZnO interlayer exhibits the highest photocurrent of 5.24 mA cm{sup −2} and best photoconversion efficiency of 4.9%, a more than 20% enhancement over the bare TNTAs/QDs. Such enhanced photoelectrochemical performance may be ascribed to the increased amounts of QDs on the TNTAs due to the introduction of ZnO interlayer. The benefits of ALD layers play a crucial role in development and optimization of high-performance photoelectrodes in the near future.

Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

Science.gov (United States)

Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

2018-04-01

We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

International Nuclear Information System (INIS)

Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

2014-01-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

2014-07-01

Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

2015-02-15

Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

Catalyst free growth of ZnO nanowires on graphene and graphene oxide and its enhanced photoluminescence and photoresponse

International Nuclear Information System (INIS)

Biroju, Ravi K; Giri, P K; Tilak, Nikhil; Rajender, Gone; Dhara, S

2015-01-01

We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, while the direct growth on CVD graphene, chemically derived graphene (graphene oxide and graphene quantum dots) without ZnO seed layer resulted in randomly oriented sparse ZnO NWs. Growth mechanism was studied from high resolution transmission electron microscopy and Raman spectroscopy of the hybrid structure. Further, we demonstrate strong UV, visible photoluminescence (PL) and enhanced photoconductivity (PC) from the CVD graphene–ZnO NWs hybrids as compared to the ZnO NWs grown without the graphene buffer layer. The evolution of crystalinity in ZnO NWs grown with ZnO seed layer and graphene buffer layer is correlated with the Gaussian line shape of UV and visible PL. This is further supported by the strong Raman mode at 438 cm −1 significant for the wurtzite phase of the ZnO NWs grown on different graphene substrates. The effect of the thickness of ZnO seed layers and the role of graphene buffer layers on the aligned growth of ZnO NWs and its enhanced PC are investigated systematically. Our results demonstrate the catalyst free growth and superior performance of graphene–ZnO NW hybrid UV photodetectors as compared to the bare ZnO NW based photodetectors. (paper)

Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

KAUST Repository

Lee, Da Hoon

2017-08-05

The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

Transfer of preheat-treated SnO 2 via a sacrificial bridge-type ZnO layer for ethanol gas sensor

KAUST Repository

Lee, Da Hoon; Kang, Sun Kil; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Kumaresan, Yogeenth; Lee, Sungeun; Lee, Chaedeok; Ham, Moon-Ho; Jung, Gun Young

2017-01-01

The progress in developing the microelectromechanical system (MEMS) heater-based SnO2 gas sensors was hindered by the subsequent heat treatment of the tin oxide (SnO2), nevertheless it is required to obtain excellent sensor characteristics. During the sintering process, the MEMS heater and the contact electrodes can be degraded at such a high temperature, which could reduce the sensor response and reliability. In this research, we presented a process of preheating the printed SnO2 sensing layer on top of a sacrificial bridge-type ZnO layer at such a high temperature, followed by transferring it onto the contact electrodes of sensor device by selective etching of the sacrificial ZnO layer. Therefore, the sensor device was not exposed to the high sintering temperature. The SnO2 gas sensor fabricated by the transfer process exhibited a rectangular sensing curve behavior with a rapid response of 52 s at 20 ppm ethanol concentration. In addition, reliable and repeatable sensing characteristics were obtained even at an ethanol gas concentration of 5 ppm.

Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

Science.gov (United States)

Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

2016-01-01

Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Science.gov (United States)

Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida

2017-01-01

High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

Fabrication of a Combustion-Reacted High-Performance ZnO Electron Transport Layer with Silver Nanowire Electrodes for Organic Solar Cells.

Science.gov (United States)

Park, Minkyu; Lee, Sang-Hoon; Kim, Donghyuk; Kang, Juhoon; Lee, Jung-Yong; Han, Seung Min

2018-02-28

Herein, a new methodology for solution-processed ZnO fabrication on Ag nanowire network electrode via combustion reaction is reported, where the amount of heat emitted during combustion was minimized by controlling the reaction temperature to avoid damaging the underlying Ag nanowires. The degree of participation of acetylacetones, which are volatile fuels in the combustion reaction, was found to vary with the reaction temperature, as revealed by thermogravimetric and compositional analyses. An optimized processing temperature of 180 °C was chosen to successfully fabricate a combustion-reacted ZnO and Ag nanowire hybrid electrode with a sheet resistance of 30 Ω/sq and transmittance of 87%. A combustion-reacted ZnO on Ag nanowire hybrid structure was demonstrated as an efficient transparent electrode and electron transport layer for the PTB7-Th-based polymer solar cells. The superior electrical conductivity of combustion-reacted ZnO, compared to that of conventional sol-gel ZnO, increased the external quantum efficiency over the entire absorption range, whereas a unique light scattering effect due to the presence of nanopores in the combustion-derived ZnO further enhanced the external quantum efficiency in the 450-550 nm wavelength range. A power conversion efficiency of 8.48% was demonstrated for the PTB7-Th-based polymer solar cell with the use of a combustion-reacted ZnO/Ag NW hybrid transparent electrode.

Atomic Layer Deposition of Electron Selective SnOx and ZnO Films on Mixed Halide Perovskite: Compatibility and Performance.

Science.gov (United States)

Hultqvist, Adam; Aitola, Kerttu; Sveinbjörnsson, Kári; Saki, Zahra; Larsson, Fredrik; Törndahl, Tobias; Johansson, Erik; Boschloo, Gerrit; Edoff, Marika

2017-09-06

The compatibility of atomic layer deposition directly onto the mixed halide perovskite formamidinium lead iodide:methylammonium lead bromide (CH(NH 2 ) 2 , CH 3 NH 3 )Pb(I,Br) 3 (FAPbI 3 :MAPbBr 3 ) perovskite films is investigated by exposing the perovskite films to the full or partial atomic layer deposition processes for the electron selective layer candidates ZnO and SnO x . Exposing the samples to the heat, the vacuum, and even the counter reactant of H 2 O of the atomic layer deposition processes does not appear to alter the perovskite films in terms of crystallinity, but the choice of metal precursor is found to be critical. The Zn precursor Zn(C 2 H 5 ) 2 either by itself or in combination with H 2 O during the ZnO atomic layer deposition (ALD) process is found to enhance the decomposition of the bulk of the perovskite film into PbI 2 without even forming ZnO. In contrast, the Sn precursor Sn(N(CH 3 ) 2 ) 4 does not seem to degrade the bulk of the perovskite film, and conformal SnO x films can successfully be grown on top of it using atomic layer deposition. Using this SnO x film as the electron selective layer in inverted perovskite solar cells results in a lower power conversion efficiency of 3.4% than the 8.4% for the reference devices using phenyl-C 70 -butyric acid methyl ester. However, the devices with SnO x show strong hysteresis and can be pushed to an efficiency of 7.8% after biasing treatments. Still, these cells lacks both open circuit voltage and fill factor compared to the references, especially when thicker SnO x films are used. Upon further investigation, a possible cause of these losses could be that the perovskite/SnO x interface is not ideal and more specifically found to be rich in Sn, O, and halides, which is probably a result of the nucleation during the SnO x growth and which might introduce barriers or alter the band alignment for the transport of charge carriers.

Enhancing Performance of SnO2-Based Dye-Sensitized Solar Cells Using ZnO Passivation Layer

Directory of Open Access Journals (Sweden)

W. M. N. M. B. Wanninayake

2016-01-01

Full Text Available Although liquid electrolyte based dye-sensitized solar cells (DSCs have shown higher photovoltaic performance in their class, they still suffer from some practical limitations such as solvent evaporation, leakage, and sealing imperfections. These problems can be circumvented to a certain extent by replacing the liquid electrolytes with quasi-solid-state electrolytes. Even though SnO2 shows high election mobility when compared to the semiconductor material commonly used in DSCs, the cell performance of SnO2-based DSCs is considerably low due to high electron recombination. This recombination effect can be reduced through the use of ultrathin coating layer of ZnO on SnO2 nanoparticles surface. ZnO-based DSCs also showed lower performance due to its amphoteric nature which help dissolve in slightly acidic dye solution. In this study, the effect of the composite SnO2/ZnO system was investigated. SnO2/ZnO composite DSCs showed 100% and 38% increase of efficiency compared to the pure SnO2-based and ZnO-based devices, respectively, with the gel electrolyte consisting of LiI salt.

Ultrathin ZnO interfacial passivation layer for atomic layer deposited ZrO2 dielectric on the p-In0.2Ga0.8As substrate

Science.gov (United States)

Liu, Chen; Lü, Hongliang; Yang, Tong; Zhang, Yuming; Zhang, Yimen; Liu, Dong; Ma, Zhenqiang; Yu, Weijian; Guo, Lixin

2018-06-01

Interfacial and electrical properties were investigated on metal-oxidesemiconductor capacitors (MOSCAPs) fabricated with bilayer ZnO/ZrO2 films by atomic layer deposition (ALD) on p-In0.2Ga0.8As substrates. The ZnO passivated In0.2Ga0.8As MOSCAPs have exhibited significantly improved capacitance-voltage (C-V) characteristics with the suppressed "stretched out" effect, increased accumulation capacitance and reduced accumulation frequency dispersion as well as the lower gate leakage current. In addition, the interface trap density (Dit) estimated by the Terman method was decreased dramatically for ZnO passivated p-In0.2Ga0.8As. The inherent mechanism is attributed to the fact that an ultrathin ZnO IPL employed by ALD prior to ZrO2 dielectric deposition can effectively suppress the formation of defect-related low-k oxides and As-As dimers at the interface, thus effectively improving the interface quality by largely removing the border traps aligned near the valence band edge of the p-In0.2Ga0.8As substrate.

Morphologically controlled ZnO nanostructures as electron transport materials in polymer-based organic solar cells

International Nuclear Information System (INIS)

Choi, Kyu-Chae; Lee, Eun-Jin; Baek, Youn-Kyoung; Lim, Dong-Chan; Kang, Yong-Cheol; Kim, Yang-Do; Kim, Ki Hyun; Kim, Jae Pil; Kim, Young-Kuk

2015-01-01

Highlights: • Enhanced efficiency of solar cells using ZnO nanocrystals for charge transport. • Morphology of the charge transport layer is controlled. • Mixture of nanoparticles and nanorods are advantageous for cell efficiency. - ABSTRACT: The morphology of ZnO electron transport layers based on ZnO nanoparticles were modified with incorporation of ZnO nanorods via their co-deposition from mixed colloidal solution of nanoparticles and nanorods. In particular, the short circuit current density and the fill factor of the constructed photovoltaic device were simultaneously improved by applying mixture of ZnO nanoparticles and nanorods. As a result, a large improvement of power conversion efficiency up to 9% for the inverted organic solar cells having a blend of low band gap polymers and fullerene derivative as an active layer was demonstrated with the morphologically controlled ZnO electron transport layer.

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

KAUST Repository

Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

2014-01-01

In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

Hybrid AC EL structures with thin protective ZnO film

International Nuclear Information System (INIS)

Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

2008-01-01

Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

Room temperature growth of ZnO nanorods by hydrothermal synthesis

Science.gov (United States)

Tateyama, Hiroki; Zhang, Qiyan; Ichikawa, Yo

2018-05-01

The effect of seed layer morphology on ZnO nanorod growth at room temperature was studied via hydrothermal synthesis on seed layers with different thicknesses and further annealed at different temperatures. The change in the thickness and annealing temperature enabled us to control over a diameter of ZnO nanorods which are attributed to the changing of crystallinity and roughness of the seed layers.

Electrical properties of ZnO thin films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

2006-04-01

We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

Electrical properties of ZnO thin films grown by MOCVD

International Nuclear Information System (INIS)

Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

2006-01-01

We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

International Nuclear Information System (INIS)

Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

2013-01-01

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

Electrodeposition of ZnO nano-wires lattices with a controlled morphology

International Nuclear Information System (INIS)

Elias, J.; Tena-Zaera, R.; Katty, A.; Levy-Clement, C.

2006-01-01

In this work, it is shown that the electrodeposition is a changeable low cost method which allows, according to the synthesis conditions, to obtain not only plane thin layers of ZnO but different nano-structures too. In a first part, are presented the formation conditions of a compact thin layer of nanocrystalline ZnO electrodeposited on a conducing glass substrate. This layer plays a buffer layer role for the deposition of a lattice of ZnO nano-wires. The step of nano-wires nucleation is not only determined by the electrochemical parameters but by the properties of the buffer layer too as the grain sizes and its thickness. In this context, the use of an electrodeposition method in two steps allows to control the nano-wires length and diameter and their density. The morphology and the structural and optical properties of these nano-structures have been analyzed by different techniques as the scanning and transmission electron microscopy, the X-ray diffraction and the optical spectroscopy. These studies show that ZnO nano-structures are formed of monocrystalline ZnO nano-wires, presenting a great developed surface and a great optical transparency in the visible. These properties make ZnO a good material for the development of nano-structured photovoltaic cells as the extremely thin absorber cells (PV ETA) or those with dye (DSSC) which are generally prepared with porous polycrystalline TiO 2 . Its replacement by a lattice of monocrystalline ZnO nano-wires allows to reduce considerably the number of grain boundaries and in consequence to improve the transport of the electrons. The results are then promising for the PV ETA cells with ZnO nano-wires. (O.M.)

MOF-Derived ZnO Nanoparticles Covered by N-Doped Carbon Layers and Hybridized on Carbon Nanotubes for Lithium-Ion Battery Anodes.

Science.gov (United States)

Zhang, Hui; Wang, Yunsong; Zhao, Wenqi; Zou, Mingchu; Chen, Yijun; Yang, Liusi; Xu, Lu; Wu, Huaisheng; Cao, Anyuan

2017-11-01

Metal-organic frameworks (MOFs) have many promising applications in energy and environmental areas such as gas separation, catalysis, supercapacitors, and batteries; the key toward those applications is controlled pyrolysis which can tailor the porous structure, improve electrical conductivity, and expose metal ions in MOFs. Here, we present a systematic study on the structural evolution of zeolitic imidazolate frameworks hybridized on carbon nanotubes (CNTs) during the carbonization process. We show that a number of typical products can be obtained, depending on the annealing time, including (1) CNTs wrapped by relatively thick carbon layers, (2) CNTs grafted by ZnO nanoparticles which are covered by thin nitrogen-doped carbon layers, and (3) CNTs grafted by aggregated ZnO nanoparticles. We also investigated the electrochemical properties of those hybrid structures as freestanding membrane electrodes for lithium ion batteries, and the second one (CNT-supported ZnO covered by N-doped carbon) shows the best performance with a high specific capacity (850 mA h/g at a current density of 100 mA/g) and excellent cycling stability. Our results indicate that tailoring and optimizing the MOF-CNT hybrid structure is essential for developing high-performance energy storage systems.

Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

Energy Technology Data Exchange (ETDEWEB)

Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

2011-10-01

Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

KAUST Repository

Jagadamma, Lethy Krishnan

2015-10-05

The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

Science.gov (United States)

Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

2017-12-01

In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

Mesoporous multi-shelled ZnO microspheres for the scattering layer of dye sensitized solar cell with a high efficiency

Energy Technology Data Exchange (ETDEWEB)

Xia, Weiwei; Mei, Chao; Zeng, Xianghua, E-mail: xhzeng@yzu.edu.cn; Wu, Guoqing; Shen, Xiaoshuang [College of Physics Science and Technology and Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002 (China); Chang, Shuai [Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China)

2016-03-14

Both light scattering and dye adsorbing are important for the power conversion efficiency PCE performance of dye sensitized solar cell (DSSC). Nanostructured scattering layers with a large specific surface area are regarded as an efficient way to improve the PCE by increasing dye adsorbing, but excess adsorbed dye will hinder light scattering and light penetration. Thus, how to balance the dye adsorbing and light penetration is a key problem to improve the PCE performance. Here, multiple-shelled ZnO microspheres with a mesoporous surface are fabricated by a hydrothermal method and are used as scattering layers on the TiO{sub 2} photoanode of the DSSC in the presence of N719 dye and iodine–based electrolyte, and the results reveal that the DSSCs based on triple shelled ZnO microsphere with a mesoporous surface exhibit an enhanced PCE of 7.66%, which is 13.0% higher than those without the scattering layers (6.78%), indicating that multiple-shelled microspheres with a mesoporous surface can ensure enough light scattering between the shells, and a favorable concentration of the adsorbed dye can improve the light penetration. These results may provide a promising pathway to obtain the high efficient DSSCs.

Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2005-05-15

Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

Photoluminescence and lasing properties of ZnO nanorods

International Nuclear Information System (INIS)

Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

2010-01-01

In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

Influence of the optical window on the performance of TCO/CdS/CdTe solar cells

Energy Technology Data Exchange (ETDEWEB)

Gordillo, G [Universidad Nacional de Colombia, Bogota (Colombia). Dept. de Fisica; Grizalez, M [Univ. de la Amazonia, Florencia (Colombia); Moreno, L C [Dept. de Quimica, Univ. Nacional de Colombia, Bogota (Colombia); Landazabal, F [Dept. de Fisica, Univ. de Cundinamarca, Fusagasuga (Colombia)

2000-07-01

Thin film solar cells, with structure TCO/CdS/CdTe/Cu, were fabricated using the transparent conducting oxides (TCOs) SnO{sub 2}:F, deposited by spray pyrolysis, and ZnO, deposited by reactive evaporation, as transparent electrodes. The TCO/CdS system with the CdS layer deposited by CBD (chemical bath deposition) method acts in the cell as an optical window and the CdTe deposited by CSS (close space sublimation) method acts as absorber layer, being the unique active layer of the cell. Details of the technological aspects of the solar cells fabrication as well as a discussion to explain the effect of the TCO layer on the solar cell performance will be given. The best results obtained in this work were: open circuit voltage of 0.57 V, short circuit current of 13 mA/cm{sup 2}, fill factor of 0.63 and conversion efficiency of 5.8%. (orig.)

H{sub 2}O{sub 2}-molecular beam epitaxy of high quality ZnO

Energy Technology Data Exchange (ETDEWEB)

El Shaer, A.; Bakin, A.; Che Mofor, A.; Kreye, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Blaesing, J.; Krost, A. [Otto-von-Guericke-University, Institute of Experimental Physics, Magdeburg (Germany); Stoimenos, J. [Aristotele University, Physics Department, Thessaloniki (Greece); Pecz, B. [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest (Hungary)

2007-07-15

We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H{sub 2}O{sub 2}-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphire with a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H{sub 2}O{sub 2}-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. (orig.)

ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

Directory of Open Access Journals (Sweden)

Struk Przemysław

2014-08-01

Full Text Available The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a~ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a~ 3 dB/cm (TE0 and TM0 modes. The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.

Rigid thin windows for vacuum applications

Science.gov (United States)

Meyer, Glenn Allyn; Ciarlo, Dino R.; Myers, Booth Richard; Chen, Hao-Lin; Wakalopulos, George

1999-01-01

A thin window that stands off atmospheric pressure is fabricated using photolithographic and wet chemical etching techniques and comprises at least two layers: an etch stop layer and a protective barrier layer. The window structure also comprises a series of support ribs running the width of the window. The windows are typically made of boron-doped silicon and silicon nitride and are useful in instruments such as electron beam guns and x-ray detectors. In an electron beam gun, the window does not impede the electrons and has demonstrated outstanding gun performance and survivability during the gun tube manufacturing process.

Growth and characterization of ZnO nanowires for optical applications

International Nuclear Information System (INIS)

AlSalhi, M S; Atif, M; Ansari, A A; Khun, K; Ibupoto, Z H; Willander, M

2013-01-01

In the present work, cerium oxide CeO 2 nanoparticles were synthesized by the sol–gel method and used for the growth of ZnO nanorods. The synthesized nanoparticles were studied by x-ray diffraction (XRD) and Raman spectroscopic techniques. Furthermore, these nanoparticles were used as the seed layer for the growth of ZnO nanorods by following the hydrothermal growth method. The structural study of ZnO nanorods was carried out by means of field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and XRD techniques. This study demonstrated that the grown ZnO nanorods are well aligned, uniform, of good crystal quality and have diameters of less than 200 nm. Energy dispersive x-ray (EDX) analysis revealed that the ZnO nanorods are composed only of zinc, cerium as the seed atom, and oxygen atoms, with no other impurities in the grown nanorods. Moreover, a photoluminescence (PL) approach was applied for the optical characterization, and it was observed that the near-band-edge (NBE) emission was the same as that of the zinc acetate seed layer, however the green and orange/red emission peaks were slightly raised due to possibly higher levels of defects in the cerium oxide seeded ZnO nanorods. This study provides an alternative approach for the controlled synthesis of ZnO nanorods using cerium oxide nanoparticles as the seed nucleation layer, improving both the morphology of the nanorods and the performance of devices based upon them. (paper)

Study on the performance of ZnO nanomaterial-based surface acoustic wave ultraviolet detectors

International Nuclear Information System (INIS)

Peng, Wenbo; He, Yongning; Zhao, Xiaolong; Liu, Han; Kang, Xue; Wen, Changbao

2013-01-01

A ZnO nanomaterial-based surface acoustic wave (SAW) ultraviolet (UV) detector is highly desirable for UV radiation detection due to its high sensitivity. In this work, firstly the ZnO nanomaterial-based SAW UV detectors operating at three different frequencies (∼50, ∼100 and ∼200 MHz) were fabricated. Then, four ZnO nanomaterial sensing layers with different thicknesses were synthesized on the SAW UV detectors operating at ∼200 MHz. The morphology, crystallization and photoluminescence of ZnO nanomaterial sensing layers were characterized using the scanning electron microscopy, transmission electron microscopy, x-ray diffraction and fluorescence spectrometer, respectively. The SAW UV detectors based on different operating frequencies and ZnO nanomaterial sensing layer's thicknesses were exposed under UV illumination at a wavelength of 365 nm and their UV responses were measured. The experimental results indicate that the frequency shift of ZnO nanomaterial-based SAW UV detector can be significantly improved by increasing operating frequency or ZnO nanomaterial sensing layer's thickness. Furthermore, the detectors exhibit good selectivity of UV illumination, an ultrahigh UV sensitivity of about 9.6 ppm (µW cm −2 ) −1  and fast transient properties. The experimental results agree well with the acousto-electric effect theory. What deserves to be noted is that, under a UV intensity of 150 µW cm −2 , the frequency shift of the SAW UV detector operating at ∼50 MHz with a thin ZnO nanomaterial sensing layer was only ∼50 kHz while that of the SAW UV detector operating at ∼200 MHz with a thick ZnO nanomaterial sensing layer could reach ∼292 kHz. These results suggest the huge potential applications of ultra-sensitive ZnO nanomaterial-based SAW UV detectors for remote wireless UV and radiation monitoring. (paper)

Water-assisted nitrogen mediated crystallisation of ZnO films

Energy Technology Data Exchange (ETDEWEB)

Muydinov, R. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany); Steigert, A. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Schönau, S.; Ruske, F. [Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany); Kraehnert, R.; Eckhardt, B. [Technical University Berlin, Institute of Technical Chemistry, Straße des 17. Juni 124, 10623 Berlin (Germany); Lauermann, I. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Szyszka, B. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany)

2015-09-01

Nitrogen mediated crystallisation (NMC) being performed in oxygen atmosphere at T ≥ 600 °C is an effective approach to obtain very well (00l)-textured ZnO films. A use of NMC-seed layers remarkably improves electrical transport properties of subsequently deposited ZnO:Al contacts. In this work, crystallisation of quasi-amorphous, nitrogen doped ZnO seed layers has been performed using water vapours at overpressure and temperatures around 100 °C. This approach allows employment of soda-lime float-glass or temperature sensitive film stacks as a substrate. We propose here possible mechanism of water-assisted NMC and grope for optimised crystallisation conditions on the basis of optical, microscopic, and textural investigation. Low temperature water-assisted crystallisation of 20 nm thick ZnO layers was compared with high temperature annealing methods in terms of composition, microstructure and crystallinity. Electrical properties such as electron Hall mobility (μ{sub e}), concentration of free electrons (N{sub e}) and sheet resistance (R{sub sh}) have been evaluated and compared for functional ZnO:Al films obtained on glass and on differently crystallised NMC-seed layers. It was found that the crystallised with water assistance at low temperature ZnO seed layers provide comparable improvement in crystallinity and electrical properties of subsequently grown functional ZnO:Al films with respect to the ones crystallised at high temperature. Use of optimised water-assisted crystallisation of seed layers has allowed decreasing R{sub sh} of thin (130–270 nm) functional ZnO:Al films twice compared to the glass substrate. Both provide this effect: increase in μ{sub e} and increase of N{sub e}. - Highlights: • Amorphous ZnO:N films can be crystallised in autoclave at temperatures around 100 °C. • Such water-assisted crystallisation provides well-crystalline ZnO seed layers. • Use of these seed layers resulted in stress-free ZnO:Al contacts with twice lower R

Fabrication and photovoltaic properties of ZnO nanorods/perovskite solar cells

Energy Technology Data Exchange (ETDEWEB)

Shirahata, Yasuhiro; Tanaike, Kohei; Akiyama, Tsuyoshi; Fujimoto, Kazuya; Suzuki, Atsushi; Balachandran, Jeyadevan; Oku, Takeo, E-mail: oku@mat.usp.ac.jp [Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

2016-02-01

ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} with the longest ZnO nanorods.

Ultrasonic-assisted fabrication of superhydrophobic ZnO nanowall ...

Indian Academy of Sciences (India)

The results suggested that the synergistic effect of the aluminium oxide seed layer and sonochemical process can enable the formation of ZnO nanowall structures favourable for superhydrophobic property. A possible growth mechanism of ZnO nanowalls formation during sonication process has been discussed in detail.

Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

2016-01-18

Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

2014-01-15

A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

Enhanced Doping Efficiency of Al-Doped ZnO by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide as an Alternative Aluminum Precursor

NARCIS (Netherlands)

Wu, Y.; Potts, S.E.; Hermkens, P.M.; Knoops, H.C.M.; Roozeboom, F.; Kessels, W.M.M.

2013-01-01

Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from ∼10% to almost 60% using dimethylaluminum

Development of ZnO based charged particle monitor for processing facility

International Nuclear Information System (INIS)

Yanagida, Takayuki; Kawaguchi, Noriaki; Fujimoto, Yutaka

2011-01-01

In the present paper, we describe the development of an α-ray imaging detector based on a ZnO single crystalline scintillator and a position-sensitive photomultiplier tube (PSPMT). The ZnO crystal was grown by the hydrothermal synthesis method with 2-in.-φ in diameter. The ZnO specimen was polished but to be 0.5 mm in thickness. After optically coupling with PSPMT, the crystal was irradiated with, 241 Am α-ray for evaluation of both spatial resolution and pulse height spectrum. Using the charge center of the gravity method, two-dimensional α-ray images were successfully obtained. The efficiency of the energy window in terms of imaging quality was also examined. (author)

Effect of ALD surface treatment on structural and optical properties of ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Jang, Jin-Tak [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, Hyukhyun, E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, Won-Jae [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of)

2013-07-01

In this study, we report on the improvement of the optical and structural properties of ZnO nanorods using atomic layer deposition (ALD) on seed ZnO nanorods. After the initial growth of ZnO seed nanorods by hydrothermal synthesis for 1 h, a ZnO layer with a thickness of 10 nm was deposited on the initial ZnO seed nanorods using ALD. Then ZnO was further grown by hydrothermal synthesis for 4 h. The samples were characterized using room temperature photoluminescence (PL), field emission-scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). From this experiment, it was found that the ZnO nanorods with the ALD surface treatment show improved optical and structural properties when compared with the ZnO nanorods grown only by hydrothermal synthesis. The ZnO nanorods with the ALD surface treatment show about 2.7 times higher XRD (0 0 2) peak intensity, about 2.64 times higher PL NBE peak intensity, and about 3.1 times better NBE/DLE ratio than the ZnO nanorods without an ALD surface treatment.

Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

Energy Technology Data Exchange (ETDEWEB)

Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho, E-mail: bhchoi@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-707 (Korea, Republic of)

2015-01-15

ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

Cross-Layer Scheme to Control Contention Window for Per-Flow in Asymmetric Multi-Hop Networks

Science.gov (United States)

Giang, Pham Thanh; Nakagawa, Kenji

The IEEE 802.11 MAC standard for wireless ad hoc networks adopts Binary Exponential Back-off (BEB) mechanism to resolve bandwidth contention between stations. BEB mechanism controls the bandwidth allocation for each station by choosing a back-off value from one to CW according to the uniform random distribution, where CW is the contention window size. However, in asymmetric multi-hop networks, some stations are disadvantaged in opportunity of access to the shared channel and may suffer severe throughput degradation when the traffic load is large. Then, the network performance is degraded in terms of throughput and fairness. In this paper, we propose a new cross-layer scheme aiming to solve the per-flow unfairness problem and achieve good throughput performance in IEEE 802.11 multi-hop ad hoc networks. Our cross-layer scheme collects useful information from the physical, MAC and link layers of own station. This information is used to determine the optimal Contention Window (CW) size for per-station fairness. We also use this information to adjust CW size for each flow in the station in order to achieve per-flow fairness. Performance of our cross-layer scheme is examined on various asymmetric multi-hop network topologies by using Network Simulator (NS-2).

Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

Energy Technology Data Exchange (ETDEWEB)

Gupta, D.; Barman, P. B.; Hazra, S. K., E-mail: surajithazra@yahoo.co.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh-173234 (India); Dutta, D. [IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700032 (India); Kumar, M.; Som, T. [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)

2015-10-28

Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

Formation of transparent ZnO layers by MePIIID

International Nuclear Information System (INIS)

Maendl, S.; Rauschenbach, B.

2006-01-01

ZnO thin films were deposited using metal plasma immersion ion implantation and deposition (MePIIID) with high voltage pulses from 0 to 10 kV at a duty cycle of 9%. All films exhibit a (0 0 2) fibre texture of the hexagonal ZnO phase. With increasing bias voltage, an increased sub-band gap absorption was observed with spectroscopic ellipsometry, together with preferential sputtering of oxygen from the film. Only a partial reversal of this effect was obtained with an increased oxygen/zinc ratio on the supply side showing that additional radiation induced defects are present in the film at high pulse voltages

Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

KAUST Repository

Qin, Yong

2008-12-04

A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2016-04-30

Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

2016-01-01

Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

KAUST Repository

Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

2010-01-01

-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass

Characterization of LPD-TiO2 compact layer in ZnO nano-rods photoelectrode for dye-sensitized solar cell

Science.gov (United States)

Huang, Jung-Jie; Wu, Chih-Kan; Hsu, Chun-Fa

2017-12-01

A titanium oxide (TiO2) compact layer was used to enhance the performance of a dye-sensitized solar cell (DSSC) by reducing the electrical loss from recombination at the indium tin oxide (ITO)/electrolyte interface and by improving the electrical contact between ITO and the zinc oxide (ZnO) nano-rod photoelectrode. The TiO2 compact layer was deposited on ITO glass using the liquid phase deposition (LPD) method. DSSCs fabricated with and without the LPD-TiO2 compact layer were compared. In addition, various thicknesses of the LPD-TiO2 compact layer were evaluated. The light-to-electricity conversion efficiency of the DSSC increased from 0.43 to 0.75% by incorporating the LPD-TiO2 compact layer. Experimental results demonstrated that the LPD method is a promising alternative to the conventional TiO2 compact layer technology for the production of high-performance DSSCs.

Synthesis and Characterization of Antireflective ZnO Nanoparticles Coatings Used for Energy Improving Efficiency of Silicone Solar Cells

Science.gov (United States)

Pîslaru-Dǎnescu, Lucian; Chitanu, Elena; El-Leathey, Lucia-Andreea; Marinescu, Virgil; Marin, Dorian; Sbârcea, Beatrice-Gabriela

2018-03-01

The paper proposes a new and complex process for the synthesis of ZnO nanoparticles for antireflective coating corresponding to silicone solar cells applications. The process consists of two major steps: preparation of seed layer and hydrothermal growth of ZnO nanoparticles. Due to the fact that the seed layer morphology influences the ZnO nanoparticles proprieties, the process optimization of the seed layer preparation is necessary. Following the hydrothermal growth of the ZnO nanoparticles, antireflective coating of silicone solar cells is achieved. After determining the functional parameters of the solar cells provided either with glass or with ZnO, it is concluded that all the parameters values are superior in the case of solar cells with ZnO antireflection coating and are increasing along with the solar irradiance.

Enhancing the Performance of Quantum Dot Light-Emitting Diodes Using Room-Temperature-Processed Ga-Doped ZnO Nanoparticles as the Electron Transport Layer

KAUST Repository

Cao, Sheng

2017-04-19

Colloidal ZnO nanoparticle (NP) films are recognized as efficient electron transport layers (ETLs) for quantum dot light-emitting diodes (QD-LEDs) with good stability and high efficiency. However, because of the inherently high work function of such films, spontaneous charge transfer occurs at the QD/ZnO interface in such a QD-LED, thus leading to reduced performance. Here, to improve the QD-LED performance, we prepared Ga-doped ZnO NPs with low work functions and tailored band structures via a room-temperature (RT) solution process without the use of bulky organic ligands. We found that the charge transfer at the interface between the CdSe/ZnS QDs and the doped ZnO NPs was significantly weakened because of the incorporated Ga dopants. Remarkably, the as-assembled QD-LEDs, with Ga-doped ZnO NPs as the ETLs, exhibited superior luminances of up to 44 000 cd/m2 and efficiencies of up to 15 cd/A, placing them among the most efficient red-light QD-LEDs ever reported. This discovery provides a new strategy for fabricating high-performance QD-LEDs by using RT-processed Ga-doped ZnO NPs as the ETLs, which could be generalized to improve the efficiency of other optoelectronic devices.

Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

KAUST Repository

Qin, Yong; Yang, Rusen; Wang, Zhong Lin

2008-01-01

A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

International Nuclear Information System (INIS)

Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

2004-01-01

Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Jimenez-Garcia, F.N. [Departamento de Fisica y Matematicas, Universidad Autonoma de Manizales, Antigua Estacion del Ferrocarril, Manizales, Caldas (Colombia); Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Espinosa-Arbelaez, D.G. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Posgrado en Ciencia e Ingenieria Materiales, Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Vargas-Hernandez, C. [Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Real, A. del [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Rodriguez-Garcia, M.E., E-mail: marioga@fata.unam.mx [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico)

2011-09-01

ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl{sub 2} complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl{sub 2}, 0.1 M MnCl{sub 2,} and a second solution of 0.1 ml of NH{sub 4}OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Jimenez-Garcia, F.N.; Espinosa-Arbelaez, D.G.; Vargas-Hernandez, C.; Real, A. del; Rodriguez-Garcia, M.E.

2011-01-01

ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl 2 complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl 2 , 0.1 M MnCl 2, and a second solution of 0.1 ml of NH 4 OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

Directory of Open Access Journals (Sweden)

I. Saurdi

2014-01-01

Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Energy Technology Data Exchange (ETDEWEB)

Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

2014-02-03

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

International Nuclear Information System (INIS)

Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

2014-01-01

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

Hydrogen-Induced Plastic Deformation in ZnO

Science.gov (United States)

Lukáč, F.; Čížek, J.; Vlček, M.; Procházka, I.; Anwand, W.; Brauer, G.; Traeger, F.; Rogalla, D.; Becker, H.-W.

In the present work hydrothermally grown ZnO single crystals covered with Pd over-layer were electrochemically loaded with hydrogen and the influence of hydrogen on ZnO micro structure was investigated by positron annihilation spectroscopy (PAS). Nuclear reaction analysis (NRA) was employed for determination of depth profile of hydrogen concentration in the sample. NRA measurements confirmed that a substantial amount of hydrogen was introduced into ZnO by electrochemical charging. The bulk hydrogen concentration in ZnO determined by NRA agrees well with the concentration estimated from the transported charge using the Faraday's law. Moreover, a subsurface region with enhanced hydrogen concentration was found in the loaded crystals. Slow positron implantation spectroscopy (SPIS) investigations of hydrogen-loaded crystal revealed enhanced concentration of defects in the subsurface region. This testifies hydrogen-induced plastic deformation of the loaded crystal. Absorbed hydrogen causes a significant lattice expansion. At low hydrogen concentrations this expansion is accommodated by elastic straining, but at higher concentrations hydrogen-induced stress exceeds the yield stress in ZnO and plastic deformation of the loaded crystal takes place. Enhanced hydrogen concentration detected in the subsurface region by NRA is, therefore, due to excess hydrogen trapped at open volume defects introduced by plastic deformation. Moreover, it was found that hydrogen-induced plastic deformation in the subsurface layer leads to typical surface modification: formation of hexagonal shape pyramids on the surface due to hydrogen-induced slip in the [0001] direction.

Organometallic synthesis of ZnO nanoparticles for gas sensing: towards selectivity through nanoparticles morphology

Energy Technology Data Exchange (ETDEWEB)

Ryzhikov, Andrey; Jońca, Justyna; Kahn, Myrtil; Fajerwerg, Katia [Laboratoire de Chimie de Coordination (LCC), CNRS (France); Chaudret, Bruno [Laboratoire de Physique et de Chimie de Nano-objets (LPCNO), INSA, UPS, CNRS (France); Chapelle, Audrey [Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS), CNRS (France); Ménini, Philippe [Université Toulouse III, Paul Sabatier (France); Shim, Chang Hyun [Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS), CNRS (France); Gaudon, Alain [Alpha M.O.S. SA (France); Fau, Pierre, E-mail: pierre.fau@lcc-toulouse.fr [Laboratoire de Chimie de Coordination (LCC), CNRS (France)

2015-07-15

ZnO nanoparticles (NP) with different morphologies such as nanorods (NR), isotropic NP, and cloud-like (CL) structures have been synthesized by an organometallic route. The prepared ZnO nanostructures have been deposited on miniaturized silicon gas sensor substrates by an inkjet method, and their responses to CO, C{sub 3}H{sub 8}, and NH{sub 3} gases have been studied at different operating temperatures (340–500 °C) and relative humidity of 50 %. It is noteworthy that the morphology of the nanostructure of the sensitive layer is maintained after thermal treatment. The morphology of ZnO NP significantly influences the sensor response level and their selectivity properties to reducing gases. Among the three different ZnO types, sensors prepared with NR show the highest response to both CO and C{sub 3}H{sub 8}. Sensors made of isotropic NP and CL structures show a lower but similar response to CO. From all investigated nanostructures, sensors made of CL structures show the weakest response to C{sub 3}H{sub 8}. With NH{sub 3} gas, no effect of the morphology of the ZnO sensitive layer has been evidenced. These different responses highlight the important role of the nanostructure of the ZnO sensitive layer and the nature of the target gas on the detection properties of the sensors. Graphical Abstract: Three different ZnO nanoparticles morphologies (cloud-like, dots, rods) have been employed as sensitive layers in chemoresistive sensors for the selective detection of CO, C{sub 3}H{sub 8} and NH{sub 3}.

ZnO film for application in surface acoustic wave device

International Nuclear Information System (INIS)

Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

2007-01-01

High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

Physical and chemical contributions of a plasma treatment in the growth of ZnO nanorods

Energy Technology Data Exchange (ETDEWEB)

Jang, J.T. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

2013-11-15

Highlights: •ZnO nanorods were grown by hydrothermal synthesis. •Oxygen plasma was done on the surface of seed ZnO nanorods. •The ZnO nanorods with and without plasma treatment were characterized. •The results showed that the optical and structural properties of ZnO nanorods with plasma treatment were enhanced. -- Abstract: We analyzed the enhancement of optical and structural properties of ZnO nanorods by using a plasma treatment. In this study, seed ZnO nanorods were grown by hydrothermal synthesis for 1 h on a ZnO buffered Si substrate. The seed ZnO nanorods were then treated with an oxygen plasma. Next, ZnO was grown for an additional 4 h by hydrothermal synthesis. The resultant ZnO nanorods were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), X-ray diffraction (XRD) and photoluminescence (PL). The measurements showed that the plasma treatment of the seed ZnO nanorods increased the roughness of the buffer layer and the concentration of oxygen ions on the surfaces of the seed ZnO nanorods and the buffer layer, leading to improved optical and structural properties. In this study, we found that the plasma treatment on the seed ZnO nanorods enhanced the optical and structural properties of the ZnO nanorods.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

KAUST Repository

Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

2016-01-01

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

KAUST Repository

Alshammari, Fwzah Hamud

2016-08-24

We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

Electrochemical properties of TiO2 encapsulated ZnO nanorod aggregates dye sensitized solar cells

International Nuclear Information System (INIS)

Justin Raj, C.; Karthick, S.N.; Dennyson Savariraj, A.; Hemalatha, K.V.; Park, Song-Ki; Kim, Hee-Je; Prabakar, K.

2012-01-01

Highlights: ► ZnO nanorod aggregates were synthesized by simple co-precipitation technique. ► TiO 2 encapsulated ZnO nanorod aggregates photoanode was used for the DSSC. ► TiO 2 encapsulated ZnO nanorod aggregates shows an enhanced efficiency. ► The electron recombination and transport properties were studied using EIS method. - Abstract: Dye sensitized solar cells based on TiO 2 encapsulated ZnO nanorod (NR) aggregates were fabricated and electrochemical performance was analyzed using impedance spectroscopy as a function of forward bias voltage. Charge transfer properties such as electron life time (τ n ), electron diffusion coefficient (D n ) and electron diffusion length (L n ) were calculated in order to ensure the influence of TiO 2 layer over the ZnO NR aggregates. It is found that the short circuit current density (Jsc = 5.8 mA cm −2 ), open circuit potential (V oc = 0.743 V), fill factor (FF = 0.57) and conversion efficiency are significantly improved by the introduction of TiO 2 layer over ZnO photoanode. A power conversion efficiency of about 2.48% has been achieved for TiO 2 /ZnO cell, which is higher than that of bare ZnO NR aggregate based cells (1.73%). The formation of an inherent energy barrier between TiO 2 and ZnO films and the passivation of surface traps on the ZnO film caused by the introduction of TiO 2 layer increase the dye absorption and favor the electron transport which may be responsible for the enhanced performance of TiO 2 /ZnO cell.

Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

Science.gov (United States)

Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

2018-05-07

Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

MOVPE growth and characterisation of ZnO properties for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Oleynik, N.

2007-03-07

In this work a new Metalorganic Vapor Phase Epitaxy (MOVPE) method was developed for the growth and doping of high-quality ZnO films. ZnO is a unique optoelectronic material for the effective light generation in the green to the UV spectral range. Optoelectronic applications of ZnO require impurity-free monocrystalline films with smooth surfaces and low concentration of the defects in the crystal lattice. At the beginning of this work only few reports on MOVPE growth of polycrystalline ZnO existed. The low quality of ZnO is attributed to the lack of an epitaxially matched substrate, and gas-phase prereactions between the Zn- and O-precursors. To achieve control over the ZnO quality, several O-precursors were tested for the growth on GaN/Si(111) or GaN/Sapphire substrates at different reactor temperatures and pressures. ZnO layers with XRD rocking curve FWHMs of the (0002) reflection of 180'' and narrow cathodoluminescence of 1.3 meV of the dominant I{sub 8} emission were synthesized using a two-step growth procedure. In this procedure, ZnO is homoepitaxially grown at high temperature using N{sub 2}O as O-precursor on a low temperature grown ZnO buffer layer using tertiary-butanol as O-precursor. p-Type doping of ZnO, which usually exhibits n-type behaviour, is very difficult. This doping asymmetry represents an issue for ZnO-based devices. Beginning from 1992, a growing number of reports have been claiming a fabrication of p-type ZnO, but, due to the missing reproducibilty, they are still questionable. Native defects, non-stoichiometry, and hydrogen are sources of n-type conductivity of ZnO. Together with a low solubility of the potential p-type dopants and deep position of impurity levels, these factors partly explain p-type doping difficulties in ZnO. However, there is no fully described mechanism of the ZnO doping asymmetry yet. In this work, NH{sub 3}, unsymmetrical dimethylhydrazine (UDMHy), diisobutylamine, and NO nitrogen precursors were studied

Full coverage of perovskite layer onto ZnO nanorods via a modified sequential two-step deposition method for efficiency enhancement in perovskite solar cells

Science.gov (United States)

Ruankham, Pipat; Wongratanaphisan, Duangmanee; Gardchareon, Atcharawon; Phadungdhitidhada, Surachet; Choopun, Supab; Sagawa, Takashi

2017-07-01

Full coverage of perovskite layer onto ZnO nanorod substrates with less pinholes is crucial for achieving high-efficiency perovskite solar cells. In this work, a two-step sequential deposition method is modified to achieve an appropriate property of perovskite (MAPbI3) film. Surface treatment of perovskite layer and its precursor have been systematically performed and their morphologies have been investigated. By pre-wetting of lead iodide (PbI2) and letting it dry before reacting with methylammonium iodide (MAI) provide better coverage of perovskite film onto ZnO nanorod substrate than one without any treatment. An additional MAI deposition followed with toluene drop-casting technique on the perovskite film is also found to increase the coverage and enhance the transformation of PbI2 to MAPbI3. These lead to longer charge carrier lifetime, resulting in an enhanced power conversion efficiency (PCE) from 1.21% to 3.05%. The modified method could been applied to a complex ZnO nanorods/TiO2 nanoparticles substrate. The enhancement in PCE to 3.41% is observed. These imply that our introduced method provides a simple way to obtain the full coverage and better transformation to MAPbI3 phase for enhancement in performances of perovskite solar cells.

Nano-structural properties of ZnO films for Si based heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

2007-10-15

Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

Nano-structural properties of ZnO films for Si based heterojunction solar cells

International Nuclear Information System (INIS)

Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

2007-01-01

Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

Research Update: Doping ZnO and TiO2 for solar cells

Directory of Open Access Journals (Sweden)

Robert L. Z. Hoye

2013-12-01

Full Text Available ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.

Twinning in ZnO ceramics with Sb sub 2 O sub 3 additions

Energy Technology Data Exchange (ETDEWEB)

Senda, T. (Ministry of Transportation, Tokyo (Japan). Ship Research Inst.); Bradt, R.C. (Univ. of Nevada-Reno, Nevada (U.S.A.). Mackay School of Mines)

1991-09-01

A mechanism is proposed for the nucleation of ZnO growth twins which is based on the crystallography of the wurtzite and spinel structures. In this paper, possible twin origins from either phase transformation or a result of deformation are both rejected. It is concluded that the ZnO twins are growth twins which nucleate in the early stages of sintering and grain growth of the ceramic powder compacts. Consideration of the oxygen anion stacking layer sequences in the hexagonal ZnO wurtzite structure and the cubic Zn {sub 7} Sb {sub 2} O {sub 12} spinel structure suggests that the nuclei for the twins may form as embryos consisting of a faulted region of the spinel-oxygen anion layer stacking sequence. And then, the faulted layer sequence is created by the presence of the antimony oxide and its reaction with the ZnO. Further, the fact that the wurtzite structure is polar and the ZnO twins are inversion twins explains why there is only a single twin per grain, as multiple twins would result in the unfavorable structural configuration. 24 refs., 2 figs.

Significant improvement in performances of LiNi0.5Mn1.5O4 through surface modification with high ordered Al-doped ZnO electro-conductive layer

International Nuclear Information System (INIS)

Sun, Hongdan; Xia, Bingbo; Liu, Weiwei; Fang, Guoqing; Wu, Jingjing; Wang, Haibo; Zhang, Ruixue; Kaneko, Shingo; Zheng, Junwei; Wang, Hongyu; Li, Decheng

2015-01-01

Graphical abstract: Al-doped ZnO (AZO)-coated LiNi 0.5 Mn 1.5 O 4 (LNMO) was prepared by sol–gel method. AZO-coated LNMO electrode shows excellent rate capability and a remarkable improvement in the cyclic performance at a high rate at elevated temperature. - Highlights: • Al-doped ZnO (AZO)-coated LiNi 0.5 Mn 1.5 O 4 (LNMO) was prepared by a traditional sol–gel method. • Al-doped ZnO (AZO) layer grown on the surface of LNMO is high ordered. • At a high rate of 10 C, the discharge capacity of the AZO-coated LNMO electrode can reach 114 mAh g −1 . • Al-doped ZnO (AZO) modification improved cyclic performance of LNMO at high temperatures. - Abstract: Al-doped ZnO (AZO)-coated LiNi 0.5 Mn 1.5 O 4 (LNMO) was prepared by sol–gel method. Transmission electron microscopy (TEM) analysis indicates that AZO layer grown on the surface of LNMO is high ordered. The results of electrochemical performance measurements reveal that the AZO-coated LNMO electrode displays the best rate capability compared with the bare LNMO and ZnO-coated LNMO, even at a high rate of 10 C. The discharge capacity of the AZO-coated LNMO electrode can still reach 114.3 mAh g −1 , about 89% of its discharge capacity at 0.1 C. Moreover, AZO-coated LNMO electrode shows a remarkable improvement in the cyclic performance at a high rate at elevated temperature due to the protective effect of AZO coating layer. The electrode delivers a capacity of 120.3 mAh g −1 with the capacity retention of 95% at 5 C in 50 cycles at 50 °C. The analysis of electrochemical impedance spectra (EIS) indicates that AZO-coated LNMO possesses the lowest charge transfer resistance compared to the bare LNMO and ZnO-coated LNMO, which may be responsible for improved rate capability

Hybrid electroluminescent device based on MEH-PPV and ZnO

Energy Technology Data Exchange (ETDEWEB)

Hewidy, Dina; Gadallah, A.-S.; Fattah, G. Abdel

2017-02-15

Hybrid organic/inorganic electroluminescent device based on the structure of glass/ITO/PEDOT:PSS/MEH-PPV/ZnO/ZnO submicrorods/Al has been manufactured. Spin coating has been used to deposit both PEDOT:PSS and MEH-PPV. Two-step process has been used to synthesis ZnO submicrorods, namely, spin coating and chemical bath deposition. Changing the dimensions of the ZnO submicrorods in this layer structure has been investigated to improve the performance of the organic/inorganic electroluminescence device. Such layer structure provides electroluminescence with narrow emission bands due to a high gain with this structure. X-ray diffraction patterns and scanning electron microscope images show that ZnO submicrorods have hexagon structure. Current-voltage curve for the structure has been reported. Electroluminescence curves (electroluminescence intensity versus wavelength) at different bias voltages have been presented and these results show narrowing in full width at half maximum in the spectra at high current density compared to photoluminescence excitation. The narrowing in the spectrum has been explained. - Highlights: • Manufacturing of MEH-PPV and ZnO electroluminescent device has been reported. • Spin coating and chemical bath deposition have been used for preparation of ZnO. • SEM images and X-ray diffraction of ZnO have been presented. • Current-voltage curves and electroluminescent measurements have been reported.

Amorphous Pd-assisted H 2 detection of ZnO nanorod gas sensor with enhanced sensitivity and stability

KAUST Repository

Kim, Hyeonghun

2018-02-05

For monitoring H2 concentrations in air, diverse resistive gas sensors have been demonstrated. In particular, Pd-decorated metal oxides have shown remarkable selectivity and sensing response for H2 detection. In this work, H2 sensing behavior of amorphous Pd layer covering ZnO nanorods (am-Pd/ZnO NRs) is investigated. This is the first report on the enhanced gas sensing performance attained by using an amorphous metal layer. The amorphous Pd layer is generated by reduction reaction with a strong reducing agent (NaBH4), and it covers the ZnO nanorods completely with a thickness of 2 ∼ 5 nm. For comparison, crystalline Pd nanoparticles-decorated ZnO nanorods (c-Pd/ZnO NRs) are produced using a milder reducing agent like hydrazine. Comparing the c-Pd/ZnO NRs sensor and other previously reported hydrogen sensors based on the crystalline Pd and metal oxides, the am-Pd/ZnO NRs sensor exhibits a remarkable sensing response (12,400% at 2% H2). The enhancement is attributed to complete cover of the amorphous Pd layer on the ZnO NRs, inducing larger interfaces between the Pd and ZnO. In addition, the amorphous Pd layer prevents surface contamination of the ZnO NRs. Therefore, the am-Pd/ZnO NRs sensor maintains initial sensing performance even after 5 months.

Amorphous Pd-assisted H 2 detection of ZnO nanorod gas sensor with enhanced sensitivity and stability

KAUST Repository

Kim, Hyeonghun; Pak, Yusin; Jeong, Yeonggyo; Kim, Woochul; Kim, Jeongnam; Jung, Gun Young

2018-01-01

For monitoring H2 concentrations in air, diverse resistive gas sensors have been demonstrated. In particular, Pd-decorated metal oxides have shown remarkable selectivity and sensing response for H2 detection. In this work, H2 sensing behavior of amorphous Pd layer covering ZnO nanorods (am-Pd/ZnO NRs) is investigated. This is the first report on the enhanced gas sensing performance attained by using an amorphous metal layer. The amorphous Pd layer is generated by reduction reaction with a strong reducing agent (NaBH4), and it covers the ZnO nanorods completely with a thickness of 2 ∼ 5 nm. For comparison, crystalline Pd nanoparticles-decorated ZnO nanorods (c-Pd/ZnO NRs) are produced using a milder reducing agent like hydrazine. Comparing the c-Pd/ZnO NRs sensor and other previously reported hydrogen sensors based on the crystalline Pd and metal oxides, the am-Pd/ZnO NRs sensor exhibits a remarkable sensing response (12,400% at 2% H2). The enhancement is attributed to complete cover of the amorphous Pd layer on the ZnO NRs, inducing larger interfaces between the Pd and ZnO. In addition, the amorphous Pd layer prevents surface contamination of the ZnO NRs. Therefore, the am-Pd/ZnO NRs sensor maintains initial sensing performance even after 5 months.

Cu-implanted ZnO nanorods array film: An aqueous synthetic approach

Energy Technology Data Exchange (ETDEWEB)

Singh, Ajaya Kumar, E-mail: ajayaksingh_au@yahoo.co.in [Department of Chemistry, Govt. VYT PG. Autonomous College Durg, Chhattisgarh (India); Thool, Gautam Sheel [Department of Chemistry, Govt. VYT PG. Autonomous College Durg, Chhattisgarh (India); Singh, R.S. [Department of Physics, Govt. D.T. College, Utai, Durg, Chhattisgarh (India); Singh, Surya Prakash, E-mail: spsingh@iict.res.in [Inorganic and Physical Chemistry Division, CSIR-Indian Institute of Chemical Technology, Uppal road, Tarnaka, Hyderabad 500007 (India)

2015-01-05

Highlights: • Cu doped ZnO nanorods were synthesized using low temperature aqueous solution method. • We demonstrated the capping action of TEA via theoretical simulation. • Raman analysis revealed the presence of tensile strain in Cu doped ZnO nanorods. • Growth rate was found to be high in Cu doped ZnO nanorods. - Abstract: Pure and Cu doped ZnO nanorods array are synthesized via two step chemical bath deposition method. The seed layer is prepared by successive ionic layer adsorption reaction (SILAR) method. The synthesized materials have been systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. SEM pictures show the existence of vertically well aligned hexagonal ZnO nanorods. EDAX spectrum confirms the presence of Cu in ZnO nanorods. High intense peak of (0 0 2) plane and E{sub 2}{sup high} mode for XRD and Raman spectrum respectively, suggest the ZnO nanorods are adopted c-axis orientation perpendicular to substrate. XRD and Raman analysis shows the presence of tensile strain in Cu doped ZnO nanorods. Effect of Cu doping on lattice constants, unit cell volume and Zn–O bond length of ZnO nanorods have also been studied. Room temperature PL measurement exhibits two luminescence bands in the spectra i.e. UV emission centered at 3.215 eV and a broad visible band. Theoretical investigation for capping action of triethanolamine is done by Hartree–Fock (HF) method with 3-21G basis set using Gaussian 09 program package.

Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Zhao-Hui [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Center for Photovoltaic and Solar Energy, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen city 518055 (China); Cho, Eou-Sik [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of); Kwon, Sang Jik, E-mail: sjkwon@gachon.ac.kr [Department of Electronics Engineering, Gachon University, Soojung-gu, Seongnam city 461-701, Gyunggi-do (Korea, Republic of)

2014-09-30

Highlights: • Mg-doped ZnO film as CIGS buffer was prepared by ALD process. • The grain size of ZnO-like hexagonal phase decreased with Mg content. • The transmittance and crystallinity increased but the band gap decreased with temperature. - Abstract: Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp{sub 2} to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature.

Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Tang Yang [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

2010-11-01

Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

International Nuclear Information System (INIS)

Tang Yang; Zhao Dongxu; Zhang Jiying; Shen Dezhen

2010-01-01

Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

Aqueous chemical route synthesis and the effect of calcination temperature on the structural and optical properties of ZnO nanoparticles

Directory of Open Access Journals (Sweden)

Mohammad Ramzan Parra

2014-10-01

Full Text Available This article reports the controlled size of ZnO nanoparticles synthesized via simple aqueous chemical route without the involvement of any capping agent. The effect of different calcination temperatures on the size of the ZnO nanoparticles was investigated. X-ray diffraction (XRD results indicated that all the samples have crystalline wurtzite phase, and peak broadening analysis was used to evaluate the average crystallite size and lattice strain using Scherrer's equation and Williamson–Hall (W–H method. Morphology and elemental compositions were investigated using atomic force microscopy (AFM and scanning electron microscopy (SEM with energy-dispersive X-ray (EDX spectroscopy. The average crystallite size of ZnO nanoparticles estimated from Scherrer's formula and W–H analysis was found to increase with the increase in calcination temperature. These results were in good agreement with AFM results. Optical properties were investigated using UV–vis spectroscopy in diffused reflectance (DR mode, with a sharp increase in reflectivity at 375 nm and the material has a strong reflective characteristic after 420 nm at 500 °C calcination temperature. Furthermore, photoluminescence spectroscopic results revealed intensive ultraviolet (UV emission with reduced defect concentrations and a slight shifting in band gap energies with increased calcination temperature from 200 °C to 500 °C. This study suggests that the as-prepared ZnO nanoparticles with bandgap tunability might be utilized as window layer in optoelectronic devices.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

Science.gov (United States)

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho; Wang, Zhenwei; Hedhili, Mohamed N.; Wehbe, Nimer; Alshareef, Husam N.

2017-01-01

, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn

Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Vinnichenko, M.; Muecklich, A.; Kolitsch, A.; Krause, M.; Munoz, E.; Gago, R.

2011-01-01

The effect of the substrate temperature on the sublattice ordering in ZnO layers grown by reactive pulsed magnetron sputtering on sapphire has been investigated by different techniques. The improvement of the crystal quality and heteroepitaxial growth at relatively low temperatures (550 deg. C) is verified by x-ray diffraction, high-resolution transmission electron microscopy, Rutherford backscattering spectrometry in channeling mode (RBS/C), and Raman spectroscopy. Sublattice-resolved analysis by resonant RBS/C and Raman spectroscopy reveals that the progressive transition to the single crystal phase is accomplished in a faster way for Zn- than for O-sublattice. This behavior is attributed to the preferential annealing of defects in the Zn sublattice at low temperatures when compared to those of the O sublattice.

Optimization of an Electron Transport Layer to Enhance the Power Conversion Efficiency of Flexible Inverted Organic Solar Cells

Directory of Open Access Journals (Sweden)

Lee Kang Hyuck

2010-01-01

Full Text Available Abstract The photovoltaic (PV performance of flexible inverted organic solar cells (IOSCs with an active layer consisting of a blend of poly(3-hexylthiophene and [6, 6]-phenyl C61-butlyric acid methyl ester was investigated by varying the thicknesses of ZnO seed layers and introducing ZnO nanorods (NRs. A ZnO seed layer or ZnO NRs grown on the seed layer were used as an electron transport layer and pathway to optimize PV performance. ZnO seed layers were deposited using spin coating at 3,000 rpm for 30 s onto indium tin oxide (ITO-coated polyethersulphone (PES substrates. The ZnO NRs were grown using an aqueous solution method at a low temperature (90°C. The optimized device with ZnO NRs exhibited a threefold increase in PV performance compared with that of a device consisting of a ZnO seed layer without ZnO NRs. Flexible IOSCs fabricated using ZnO NRs with improved PV performance may pave the way for the development of PV devices with larger interface areas for effective exciton dissociation and continuous carrier transport paths.

Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

International Nuclear Information System (INIS)

Singh, Shaivalini; Park, Si-Hyun

2016-01-01

The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

The sensitivity and dynamic response of field ionization gas sensor based on ZnO nanorods

International Nuclear Information System (INIS)

Min Jiahua; Liang Xiaoyan; Wang Bin; Wang Linjun; Zhao Yue; Shi Weimin; Xia Yiben

2011-01-01

Field ionization gas sensors based on ZnO nanorods (50–300 nm in diameter, and 3–8 μm in length) with and without a buffer layer were fabricated, and the influence of the orientation of nano-ZnO on the ionization response of devices was discussed, including the sensitivity and dynamic response of the ZnO nanorods with preferential orientation. The results indicated that ZnO nanorods as sensor anode could dramatically decrease the breakdown voltage. The XRD and SEM images illustrated that nano-ZnO with a ZnO buffer layer displayed high c-axis orientation, which helps to significantly reduce the breakdown voltage. Device A based on ZnO nanorods with a ZnO buffer layer could distinguish toluene and acetone. The dynamic responses of device A to the NO x compounds presented the sensitivity of 0.045 ± 0.007 ppm/pA and the response speed within 17–40 s, and indicated a linear relationship between NO x concentration and current response at low NO x concentrations. In addition, the dynamic responses to benzene, isopropyl alcohol, ethanol, and methanol reveals that the device has higher sensitivity to gas with larger static polarizability and lower ionization energy.

Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells

KAUST Repository

Eisner, Flurin

2018-04-25

We report the development of a solution‐processed In2O3/ZnO heterojunction electron transport layer (ETL) and its application in high efficiency organic bulk‐heterojunction (BHJ) and inorganic colloidal quantum dot (CQD) solar cells. Study of the electrical properties of this low‐dimensional oxide heterostructure via field‐effect measurements reveals that electron transport along the heterointerface is enhanced by more than a tenfold when compared to the individual single‐layer oxides. Use of the heterojunction as the ETL in organic BHJ photovoltaics is found to consistently improve the cell\\'s performance due to the smoothening of the ZnO surface, increased electron mobility and a noticeable reduction in the cathode\\'s work function, leading to a decrease in the cells’ series resistance and a higher fill factor (FF). Specifically, non‐fullerene based organic BHJ solar cells based on In2O3/ZnO ETLs exhibit very high power conversion efficiencies (PCE) of up to 12.8%, and high FFs of over 70%. The bilayer ETL concept is further extended to inorganic lead‐sulphide CQD solar cells. Resulting devices exhibit excellent performance with a maximum PCE of 8.2% and a FF of 56.8%. The present results highlight the potential of multilayer oxides as novel ETL systems and lay the foundation for future developments.

Solution-Processed In2O3/ZnO Heterojunction Electron Transport Layers for Efficient Organic Bulk Heterojunction and Inorganic Colloidal Quantum-Dot Solar Cells

KAUST Repository

Eisner, Flurin; Seitkhan, Akmaral; Han, Yang; Khim, Dongyoon; Yengel, Emre; Kirmani, Ahmad R.; Xu, Jixian; Garcí a de Arquer, F. Pelayo; Sargent, Edward H.; Amassian, Aram; Fei, Zhuping; Heeney, Martin; Anthopoulos, Thomas D.

2018-01-01

We report the development of a solution‐processed In2O3/ZnO heterojunction electron transport layer (ETL) and its application in high efficiency organic bulk‐heterojunction (BHJ) and inorganic colloidal quantum dot (CQD) solar cells. Study of the electrical properties of this low‐dimensional oxide heterostructure via field‐effect measurements reveals that electron transport along the heterointerface is enhanced by more than a tenfold when compared to the individual single‐layer oxides. Use of the heterojunction as the ETL in organic BHJ photovoltaics is found to consistently improve the cell's performance due to the smoothening of the ZnO surface, increased electron mobility and a noticeable reduction in the cathode's work function, leading to a decrease in the cells’ series resistance and a higher fill factor (FF). Specifically, non‐fullerene based organic BHJ solar cells based on In2O3/ZnO ETLs exhibit very high power conversion efficiencies (PCE) of up to 12.8%, and high FFs of over 70%. The bilayer ETL concept is further extended to inorganic lead‐sulphide CQD solar cells. Resulting devices exhibit excellent performance with a maximum PCE of 8.2% and a FF of 56.8%. The present results highlight the potential of multilayer oxides as novel ETL systems and lay the foundation for future developments.

Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

International Nuclear Information System (INIS)

Dewald, Wilma; Sittinger, Volker; Szyszka, Bernd; Säuberlich, Frank; Stannowski, Bernd; Köhl, Dominik; Ries, Patrick; Wuttig, Matthias

2013-01-01

Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al 2 O 3 target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm 2 /Vs and electron density of 4.3 · 10 20 cm −3 from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm 2 /Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current

Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Dewald, Wilma, E-mail: wilma.dewald@ist.fraunhofer.de [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Säuberlich, Frank; Stannowski, Bernd [Sontor GmbH, OT Thalheim, Sonnenallee 7-11, 06766 Bitterfeld-Wolfen (Germany); Köhl, Dominik; Ries, Patrick; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, Sommerfeldstraße 14, 52074 Aachen (Germany)

2013-05-01

Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al{sub 2}O{sub 3} target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm{sup 2}/Vs and electron density of 4.3 · 10{sup 20} cm{sup −3} from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm{sup 2}/Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current.

Electrochemical properties of TiO{sub 2} encapsulated ZnO nanorod aggregates dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Justin Raj, C.; Karthick, S.N.; Dennyson Savariraj, A.; Hemalatha, K.V.; Park, Song-Ki; Kim, Hee-Je [Pusan National University, Department of Electrical Engineering, San 30, Jangjeong-Dong, Gumjeong-Ku, Busan 609 735 (Korea, Republic of); Prabakar, K., E-mail: prabakar@pusan.ac.kr [Pusan National University, Department of Electrical Engineering, San 30, Jangjeong-Dong, Gumjeong-Ku, Busan 609 735 (Korea, Republic of)

2012-10-05

Highlights: Black-Right-Pointing-Pointer ZnO nanorod aggregates were synthesized by simple co-precipitation technique. Black-Right-Pointing-Pointer TiO{sub 2} encapsulated ZnO nanorod aggregates photoanode was used for the DSSC. Black-Right-Pointing-Pointer TiO{sub 2} encapsulated ZnO nanorod aggregates shows an enhanced efficiency. Black-Right-Pointing-Pointer The electron recombination and transport properties were studied using EIS method. - Abstract: Dye sensitized solar cells based on TiO{sub 2} encapsulated ZnO nanorod (NR) aggregates were fabricated and electrochemical performance was analyzed using impedance spectroscopy as a function of forward bias voltage. Charge transfer properties such as electron life time ({tau}{sub n}), electron diffusion coefficient (D{sub n}) and electron diffusion length (L{sub n}) were calculated in order to ensure the influence of TiO{sub 2} layer over the ZnO NR aggregates. It is found that the short circuit current density (Jsc = 5.8 mA cm{sup -2}), open circuit potential (V{sub oc} = 0.743 V), fill factor (FF = 0.57) and conversion efficiency are significantly improved by the introduction of TiO{sub 2} layer over ZnO photoanode. A power conversion efficiency of about 2.48% has been achieved for TiO{sub 2}/ZnO cell, which is higher than that of bare ZnO NR aggregate based cells (1.73%). The formation of an inherent energy barrier between TiO{sub 2} and ZnO films and the passivation of surface traps on the ZnO film caused by the introduction of TiO{sub 2} layer increase the dye absorption and favor the electron transport which may be responsible for the enhanced performance of TiO{sub 2}/ZnO cell.

Optical absorption enhancement by inserting ZnO optical spacer in plasmonic organic solar cells

Science.gov (United States)

N'Konou, Kekeli; Torchio, Philippe

2018-01-01

Optical absorption enhancement (AE) using coupled optical spacer and plasmonic effects in standard and inverted organic solar cells (OSCs) are demonstrated using the finite-difference time-domain numerical method. The influence of an added zinc oxide (ZnO) optical spacer layer inserted below the active layer in standard architecture is first theoretically investigated while the influence of varying the ZnO cathodic buffer layer thickness in inverted design is studied on AE. Then, the embedding of a square periodic array of core-shell silver-silica nanospheres (Ag@SiO2 NSs) at different positions in standard and inverted OSCs is performed while AE and short-circuit current density (Jsc) are calculated. As a result of previous combined effects, the optimized standard plasmonic OSCs present 15% and 79.45% enhancement in J over the reference with and without ZnO optical spacer layer, respectively, and a 16% increase of AE when Ag@SiO2 NSs are placed on top of the PEDOT:PSS layer. Compared to the inverted OSC reference, the plasmonic OSCs present 26% and 27% enhancement in J and AE, respectively, when the Ag@SiO2 NSs are located on top of the ZnO layer. Furthermore, the spatial position of these NSs in such OSCs is a key parameter for increasing light absorption via enhanced electromagnetic field distribution.

Enhanced resolution imaging of ultrathin ZnO layers on Ag(111) by multiple hydrogen molecules in a scanning tunneling microscope junction

Science.gov (United States)

Liu, Shuyi; Shiotari, Akitoshi; Baugh, Delroy; Wolf, Martin; Kumagai, Takashi

2018-05-01

Molecular hydrogen in a scanning tunneling microscope (STM) junction has been found to enhance the lateral spatial resolution of the STM imaging, referred to as scanning tunneling hydrogen microscopy (STHM). Here we report atomic resolution imaging of 2- and 3-monolayer (ML) thick ZnO layers epitaxially grown on Ag(111) using STHM. The enhanced resolution can be obtained at a relatively large tip to surface distance and resolves a more defective structure exhibiting dislocation defects for 3-ML-thick ZnO than for 2 ML. In order to elucidate the enhanced imaging mechanism, the electric and mechanical properties of the hydrogen molecular junction (HMJ) are investigated by a combination of STM and atomic force microscopy. It is found that the HMJ shows multiple kinklike features in the tip to surface distance dependence of the conductance and frequency shift curves, which are absent in a hydrogen-free junction. Based on a simple modeling, we propose that the junction contains several hydrogen molecules and sequential squeezing of the molecules out of the junction results in the kinklike features in the conductance and frequency shift curves. The model also qualitatively reproduces the enhanced resolution image of the ZnO films.

Enhancement of the corrosion protection of electroless Ni–P coating by deposition of sonosynthesized ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Sharifalhoseini, Zahra [Sonochemical Research Center, Department of Chemistry, Faculty of Science, Ferdowsi University of Mashhad, 91779 Mashhad (Iran, Islamic Republic of); Entezari, Mohammad H., E-mail: entezari@um.ac.ir [Sonochemical Research Center, Department of Chemistry, Faculty of Science, Ferdowsi University of Mashhad, 91779 Mashhad (Iran, Islamic Republic of); Environmental Chemistry Research Center, Department of Chemistry, Faculty of Science, Ferdowsi University of Mashhad, 91779 Mashhad (Iran, Islamic Republic of)

2015-10-01

Graphical abstract: Enhancement of the corrosion protection of electroless Ni–P layer by ZnO nanoparticles deposition and the comparison with the classical and sonochemical Ni–P coatings. - Highlights: • Unique effects of ultrasound were investigated on the anticorrosive performance of electroless Ni–P coating. • Sonoynthesis of ZnO NPs and its deposition were performed on the surface of Ni–P coating. • ZnO as an anticorrosive has a critical role in the multifunctional surfaces. • Electrochemical properties of all fabricated samples were compared with each other. - Abstract: Ni–P coatings were deposited through electroless nickel plating in the presence and absence of ultrasound. The simultaneous synthesis of ZnO nanoparticle and its deposition under ultrasound were also carried out on the surface of Ni–P layer prepared by the classical method. The morphology of the surfaces and the chemical composition were determined by scanning electron microscopy(SEM) and energy dispersive spectroscopy (EDS), respectively. Electrochemical techniques were applied for the corrosion behavior studies. The Ni–P layer deposited by ultrasound showed a higher anticorrosive property than the layer deposited by the classical method. The ZnO nanoparticles deposited on the surface of Ni–P layer significantly improved the corrosion resistance.

Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

Science.gov (United States)

Särkijärvi, Suvi; Sintonen, Sakari; Tuomisto, Filip; Bosund, Markus; Suihkonen, Sami; Lipsanen, Harri

2014-07-01

We report on the epitaxial growth of ZnO on GaN template by atomic layer deposition (ALD). Diethylzinc (DEZn) and water vapour (H2O) were used as precursors. The structure and the quality of the grown ZnO layers were studied with scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL) measurements and positron annihilation spectroscopy. The ZnO films were confirmed epitaxial, and the film quality was found to improve with increasing deposition temperature in the vicinity of the threshold temperature of two dimensional growth. We conclude that high quality ZnO thin films can be grown by ALD. Interestingly only separate Zn-vacancies were observed in the films, although ZnO thin films typically contain fairly high density of surface pits and vacancy clusters.

Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

KAUST Repository

Khim, Dongyoon

2017-03-15

This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

KAUST Repository

Khim, Dongyoon; Lin, Yen-Hung; Nam, Sungho; Faber, Hendrik; Tetzner, Kornelius; Li, Ruipeng; Zhang, Qiang; Li, Jun; Zhang, Xixiang; Anthopoulos, Thomas D.

2017-01-01

This paper reports the controlled growth of atomically sharp In2 O3 /ZnO and In2 O3 /Li-doped ZnO (In2 O3 /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2 O3 /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2 O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2 O3 /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2 O3 /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.

Standing and sitting adlayers in atomic layer deposition of ZnO

Energy Technology Data Exchange (ETDEWEB)

Gao, Zhengning; Banerjee, Parag, E-mail: parag.banerjee@wustl.edu [Department of Mechanical Engineering & Material Science, Washington University in St. Louis, Missouri 63130 and Institute of Materials Science & Engineering, Washington University in St. Louis, Missouri 63130 (United States); Wu, Fei; Myung, Yoon [Department of Mechanical Engineering & Material Science, Washington University in St. Louis, Missouri 63130 (United States); Fei, Ruixiang [Department of Physics, Washington University in St. Louis, Missouri 63130 (United States); Kanjolia, Ravindra [SAFC Hitech, 1429 Hilldale Ave., Haverhill, Massachusetts 01832 (United States); Yang, Li [Institute of Materials Science & Engineering, Washington University in St. Louis, Missouri 63130 and Department of Physics, Washington University in St. Louis, Missouri 63130 (United States)

2016-01-15

The extent of reactivity of diethyl zinc (DEZ) with a hydroxylated surface during atomic layer deposition (ALD) of ZnO using DEZ and water is measured. Two adlayer configurations of DEZ are possible. The “standing” adlayer releases one ethyl group from DEZ. The “sitting” adlayer releases both ethyl groups, thus forming a Zn bridge between two O anions. Density functional theory calculations suggest the sitting configuration is more stable than the standing configuration by 790 meV. In situ quadrupole mass spectroscopy of by-product ethane generated in ALD half cycles indicate that ∼1.56 OH sites react with a DEZ molecule resulting in 71.6% of sitting sites. A simple simulation of a “ball-and-stick” DEZ molecule randomly collapsing on a neighboring site remarkably captures this adlayer behavior. It is concluded that DEZ fraction sitting is a competitive process of a standing DEZ molecule collapsing onto an available neighboring hydroxyl site, as sites vie for occupancy via adsorption and surface diffusion.

ZnO based nanowires grown by chemical vapour deposition for selective hydrogenation of acetylene alcohols

NARCIS (Netherlands)

Protasova, L.N.; Rebrov, E.; Choy, K.L.; Pung, S.Y.; Engels, V.; Cabaj, M.; Wheatley, A.E.H.; Schouten, J.C.

2011-01-01

Vertically aligned ZnO nanowires (NWs) with a length of 1.5–10 µm and a mean diameter of ca. 150 nm were grown by chemical vapour deposition onto a c-oriented ZnO seed layer which was deposited by atomic layer deposition on Si substrates. The substrates were then spin-coated with an ethanol solution

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

Directory of Open Access Journals (Sweden)

Saif Saadaoui

2017-01-01

Full Text Available In this work, two natural dyes extracted from henna and mallow plants with a maximum absorbance at 665 nm were studied and used as sensitizers in the fabrication of dye-sensitized solar cells (DSSCs. Fourier transform infrared (FTIR spectra of the extract revealed the presence of anchoring groups and coloring constituents. Two different structures were prepared by chemical bath deposition (CBD using zinc oxide (ZnO layers to obtain ZnO nanowall (NW or nanorod (NR layers employed as a thin film at the photoanode side of the DSSC. The ZnO layers were annealed at different temperatures under various gas sources. Indeed, the forming gas (FG (N2/H2 95:5 was found to enhance the conductivity by a factor of 103 compared to nitrogen (N2 or oxygen (O2 annealing gas. The NR width varied between 40 and 100 nm and the length from 500 to 1000 nm, depending on the growth time. The obtained NWs had a length of 850 nm. The properties of the developed ZnO NW and NR layers with different thicknesses and their effect on the photovoltaic parameters were studied. An internal coverage of the ZnO NWs was also applied by the deposition of a thin TiO2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current Jsc by seven times from 2.45 × 10−3 mA/cm2 to 1.70 × 10−2 mA /cm2.

Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Luong, Chi Hieu [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Kim, Sarah [Central Research Division, LG Chem., Yuseong-gu, Daejeon 305-738 (Korea, Republic of); Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon-Gil [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Jeong, Jun-Ho [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Choi, Jun-Hyuk, E-mail: junhyuk@kimm.re.kr [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Jeong, Jong-Ryul, E-mail: jrjeong@cnu.ac.kr [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

2015-10-01

Highlights: • Investigated the effect of the interfacial ZnO for ETL synthesized by photochemical reaction using photosensitive 2-nitrobenzaldehyde on the inverted P3HT:PCBM OSC. • The abrupt increase of grain size and surface roughness was observed as increasing the annealing temperature above 350 °C. • The sheet resistance abruptly decreased with increasing the annealing temperature above 350 °C. • Increase of surface roughness caused by the high annealing temperature could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current. - Abstract: We have investigated ZnO thin films prepared via photochemical reaction as the electron transport layer (ETL) of inverted organic solar cells (OSCs). Morphological and electrical properties of the ZnO thin films prepared by the photosensitive ZnO sol were studied according to the annealing temperature and their effects on the performance of the inverted poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs was characterized. It was found that the optimal annealing temperature of the ZnO thin films was 330 °C, and that devices with the ZnO ETL annealed at this temperature exhibited the largest short-circuit current density (J{sub sc}) of 9.39 mA/cm{sup 2}, as well as the highest power conversion efficiency (PCE) of 2.31%, which can be attributed to enhanced electron transport and interfacial properties. Devices containing ZnO films formed at optimal annealing condition exhibited an open circuit voltage (V{sub oc}) of 0.60 V and a fill factor (FF) of 41.0%. However, further increase of the annealing temperature led to degradation of the device performance, despite further improvements in electrical properties. We have found that marked increase in the surface roughness of the ZnO films occurred at temperatures above 350 °C which could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current.

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

Science.gov (United States)

Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

2009-04-22

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

International Nuclear Information System (INIS)

Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

2006-01-01

The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

Directory of Open Access Journals (Sweden)

Jian Gao

2018-01-01

Full Text Available In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM ultraviolet photodetectors (UV PDs. The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magnitude; however, it also decreased the photo-current of the UV PD by one order of magnitude. The former could be related to the reduction of oxygen vacancies and the crystallization enhancement of the ZnO film; the latter should be attributed to the reduction of defects in the ZnO film, thus resulting in a smaller decrease in thermionic-field emission tunneling barrier because of reduced holes trapped near the interface. For the post-annealing at 250 oC for 30 min, the dark-current was equal to 5.16×10-11 A, and the ultraviolet-visible rejection ratio approached 1.4×106, and the responsivity was as high as 1.78×103 A/W at 5V. Further, prolonging annealing time at a lower temperature (200 oC also could greatly improve the performance of the UV PD, i.e., 90 min annealing produced a quite large responsivity of 1.30×104 A/W at 5 V while maintaining a very low dark-current (1.42×10-10 A and a large ultraviolet-visible rejection ratio (4.06×105.

Luminescence of colloidal ZnO nanoparticles synthesized in alcohols and biological application of ZnO passivated by MgO

International Nuclear Information System (INIS)

Sikora, Bożena; Fronc, Krzysztof; Kamińska, Izabela; Elbaum, Danek; Koper, Kamil; Stępień, Piotr

2013-01-01

This report presents the results of spectroscopic measurements of colloidal ZnO nanoparticles synthesized in various alcohols. Luminescence of colloidal ZnO was monitored under different reaction conditions to elucidate the mechanism of the visible emission. We performed the process in different alcohols, temperatures and reaction times for two different reactants: water and NaOH. Based on the presented and previously published results it is apparent that the luminescence of the nanoparticles is influenced by several competing phenomena: the formation of new nucleation centers, the growth of the nanoparticles and surface passivation. Superimposed on the above effects is a size dependent luminescence alteration resulting from the quantum confinement. The study contributes to our understanding of the origin of ZnO nanoparticles’ green emission which is important in a rational design of fluorescent probes for nontoxic biological applications. The ZnO nanoparticles were coated with a magnesium oxide layer and introduced into a HeLa cancer cell. (paper)

Luminescence of colloidal ZnO nanoparticles synthesized in alcohols and biological application of ZnO passivated by MgO.

Science.gov (United States)

Sikora, Bożena; Fronc, Krzysztof; Kamińska, Izabela; Koper, Kamil; Stępień, Piotr; Elbaum, Danek

2013-05-15

This report presents the results of spectroscopic measurements of colloidal ZnO nanoparticles synthesized in various alcohols. Luminescence of colloidal ZnO was monitored under different reaction conditions to elucidate the mechanism of the visible emission. We performed the process in different alcohols, temperatures and reaction times for two different reactants: water and NaOH. Based on the presented and previously published results it is apparent that the luminescence of the nanoparticles is influenced by several competing phenomena: the formation of new nucleation centers, the growth of the nanoparticles and surface passivation. Superimposed on the above effects is a size dependent luminescence alteration resulting from the quantum confinement. The study contributes to our understanding of the origin of ZnO nanoparticles' green emission which is important in a rational design of fluorescent probes for nontoxic biological applications. The ZnO nanoparticles were coated with a magnesium oxide layer and introduced into a HeLa cancer cell.

Effect of nanocomposite packaging containing ZnO on growth of Bacillus subtilis and Enterobacter aerogenes

Energy Technology Data Exchange (ETDEWEB)

Esmailzadeh, Hakimeh [National Nutrition and Food Technology Research Institute, Faculty of Nutrition and Food Technology, Shahid Beheshti University of Medical Sciences, Tehran (Iran, Islamic Republic of); Sangpour, Parvaneh, E-mail: Sangpour@merc.ac.ir [Nanotechnology and Advanced Materials Department, Materials and Energy Research Center, Karaj (Iran, Islamic Republic of); Shahraz, Farzaneh [National Nutrition and Food Technology Research Institute, Faculty of Nutrition and Food Technology, Shahid Beheshti University of Medical Sciences, Tehran (Iran, Islamic Republic of); Hejazi, Jalal [Department of Biochemistry and Nutrition, Faculty of Medicine, Zanjan University of Medical Sciences, Zanjan (Iran, Islamic Republic of); Khaksar, Ramin [National Nutrition and Food Technology Research Institute, Faculty of Nutrition and Food Technology, Shahid Beheshti University of Medical Sciences, Tehran (Iran, Islamic Republic of)

2016-01-01

Recent advances in nanotechnology have opened new windows in active food packaging. Nano-sized ZnO is an inexpensive material with potential antimicrobial properties. The aim of the present study is to evaluate the antibacterial effect of low density Polyethylene (LDPE) containing ZnO nanoparticles on Bacillus subtilis and Enterobacter aerogenes. ZnO nanoparticles have been synthesized by facil molten salt method and have been characterized by X-ray diffraction (XRD), and scanning electron microscopy (SEM). Nanocomposite films containing 2 and 4 wt.% ZnO nanoparticles were prepared by melt mixing in a twin-screw extruder. The growth of both microorganisms has decreased in the presence of ZnO containing nanocomposites compared with controls. Nanocomposites with 4 wt.% ZnO nanoparticles had stronger antibacterial effect against both bacteria in comparison with the 2 wt.% ZnO containing nanocomposites. B. subtilis as Gram-positive bacteria were more sensitive to ZnO containing nanocomposite films compared with E. aerogenes as Gram-negative bacteria. There were no significant differences between the migration of Zn ions from 2 and 4 wt.% ZnO containing nanocomposites and the released Zn ions were not significantly increased in both groups after 14 days compared with the first. Regarding the considerable antibacterial effects of ZnO nanoparticles, their application in active food packaging can be a suitable solution for extending the shelf life of food. - Highlights: • ZnO containing nanocomposites decreased growth of both B. subtilis and E. aerogenes. • B. subtilis was more sensitive to ZnO containing nanocomposites. • The migration of Zn ions from nanocomposites was negligible.

Stability and dewetting kinetics of thin gold films on Ti, TiOx and ZnO adhesion layers

International Nuclear Information System (INIS)

Schaefer, Brian T.; Cheung, Jeffrey; Ihlefeld, Jon F.; Jones, Jacob L.; Nagarajan, Valanoor

2013-01-01

We present an in situ high-temperature confocal laser microscopy study on the thermal stability of 40 nm thick gold thin films grown on 40 nm Ti, TiO x and ZnO adhesion layers on (0 0 1) Si. In situ observation of the dewetting process was performed over a wide range of set temperatures (400–800 °C) and ramp rates (10–50 °C min −1 ) for each gold/adhesion layer combination. We found that significant dewetting and subsequent formation of gold islands occurs only at and above 700 °C for all adhesion layers. The dewetting is driven to equilibrium for gold/ZnO compared to gold/Ti and gold/TiO x as confirmed by ex situ X-ray diffraction and scanning electron microscopy characterization. Quantification of the in situ data through stretched exponential kinetic models reveals an underlying apparent activation energy of the dewetting process. This energy barrier for dewetting is higher for gold/Ti and gold/TiO x compared to gold/ZnO, thus confirming the ex situ observations. We rationalize that these apparent activation energies correspond to the underlying thermal stability of each gold/adhesion layer system

Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Warasawa, Moe [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Kaijo, Akira [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293 (Japan); Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

2012-01-01

The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm{sup 2}/Vs) and lower resistivity (4-5 Multiplication-Sign 10{sup -4} {Omega} cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells.

Microwave-assisted silica coating and photocatalytic activities of ZnO nanoparticles

International Nuclear Information System (INIS)

Siddiquey, Iqbal Ahmed; Furusawa, Takeshi; Sato, Masahide; Suzuki, Noboru

2008-01-01

A new and rapid method for silica coating of ZnO nanoparticles by the simple microwave irradiation technique is reported. Silica-coated ZnO nanoparticles were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), high-resolution transmission electron microscopy (HR-TEM), CHN elemental analysis and zeta potential measurements. The FT-IR spectra and XPS clearly confirmed the silica coating on ZnO nanoparticles. The results of XPS analysis showed that the elements in the coating at the surface of the ZnO nanoparticles were Zn, O and Si. HR-TEM micrographs revealed a continuous and uniform dense silica coating layer of about 3 nm in thickness on the surface of ZnO nanoparticles. In addition, the silica coating on the ZnO nanoparticles was confirmed by the agreement in the zeta potential of the silica-coated ZnO nanoparticles with that of SiO 2 . The results of the photocatalytic degradation of methylene blue (MB) in aqueous solution showed that silica coating effectively reduced the photocatalytic activity of ZnO nanoparticles. Silica-coated ZnO nanoparticles showed excellent UV shielding ability and visible light transparency

Nanostructured ZnO thin films prepared by sol–gel spin-coating

Energy Technology Data Exchange (ETDEWEB)

Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

2014-10-30

Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

International Nuclear Information System (INIS)

Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

2013-01-01

ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

Impact of an AlAs window layer upon the optical properties of Al x Ga1-x As photodiodes

Science.gov (United States)

Kang, T.; Chen, X. J.; Johnson, E. B.; Christian, J. F.; Lee, K.; Hammig, M. D.

2016-05-01

Recently developed advanced scintillators, which have the ability to distinguish gamma-ray interaction events from those that accompany neutron impact, require improved quantum efficiency in the blue to near UV region of the spectrum. We utilize GaAs/Al0.8Ga0.2As photodiode elements as components in a wide band-gap solid-state photomultiplier as a lower-cost, lower logistical burden, and higher quantum efficiency replacement for the photomultiplier tube. An AlAs window layer is employed as a means to increase the diode’s optical performance. Relative to structures absent the window layer, simulations and measurements demonstrate that the AlAs layer produces a spatial coincidence between regions of large drift fields with regions of high photon absorption. In addition to the AlAs layer, secondary ion mass spectrometry measurements show that an unexpected high degree of inter-diffusion of GaAs and AlAs quenches the photon-detection efficiency, a decrease that can be avoided by its post-growth removal. With the AlAs layer, the peak external quantum efficiency of 49% is achieved at 450 nm with 10 V reverse bias, which does not fully deplete the device. Simulations show that full depletion can result in efficiencies exceeding 90%. In order to enhance the optical response, a simple anti-reflective coating layer is designed using the existing passivation layer components that successfully minimizes the reflection at the wavelength range of interest (300 nm-500 nm).

Impact of an AlAs window layer upon the optical properties of AlxGa1−xAs photodiodes

International Nuclear Information System (INIS)

Kang, T; Hammig, M D; Chen, X J; Johnson, E B; Christian, J F; Lee, K

2016-01-01

Recently developed advanced scintillators, which have the ability to distinguish gamma-ray interaction events from those that accompany neutron impact, require improved quantum efficiency in the blue to near UV region of the spectrum. We utilize GaAs/Al 0.8 Ga 0.2 As photodiode elements as components in a wide band-gap solid-state photomultiplier as a lower-cost, lower logistical burden, and higher quantum efficiency replacement for the photomultiplier tube. An AlAs window layer is employed as a means to increase the diode’s optical performance. Relative to structures absent the window layer, simulations and measurements demonstrate that the AlAs layer produces a spatial coincidence between regions of large drift fields with regions of high photon absorption. In addition to the AlAs layer, secondary ion mass spectrometry measurements show that an unexpected high degree of inter-diffusion of GaAs and AlAs quenches the photon-detection efficiency, a decrease that can be avoided by its post-growth removal. With the AlAs layer, the peak external quantum efficiency of 49% is achieved at 450 nm with 10 V reverse bias, which does not fully deplete the device. Simulations show that full depletion can result in efficiencies exceeding 90%. In order to enhance the optical response, a simple anti-reflective coating layer is designed using the existing passivation layer components that successfully minimizes the reflection at the wavelength range of interest (300 nm–500 nm). (paper)

A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

Energy Technology Data Exchange (ETDEWEB)

Feng, Yamin, E-mail: yaminfengccnuphy@outlook.com; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.cn

2013-12-25

Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm{sup −2} illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes.

A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

International Nuclear Information System (INIS)

Feng, Yamin; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang

2013-01-01

Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm −2 illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes

Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

Directory of Open Access Journals (Sweden)

M.I. Khan

Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

Growth of compact arrays of optical quality single crystalline ZnO

Indian Academy of Sciences (India)

We report the synthesis and optical properties of compact and aligned ZnO nanorod arrays (dia, ∼ 50–200 nm) grown on a glass substrate with varying seed particle density. The suspension of ZnO nanoparticles (size, ∼ 15 nm) of various concentrations are used as seed layer for the growth of nanorod arrays via ...

Fabrication of layered hydroxide zinc nitrate films and their conversion to ZnO nanosheet assemblies for use in dye-sensitized solar cells

Directory of Open Access Journals (Sweden)

Takuya Yuki

2015-03-01

Full Text Available Layered hydroxide zinc nitrate (LHZN; Zn5(NO32(OH8·xH2O films were fabricated on glass or plastic substrates by a chemical bath deposition method combined with a homogeneous precipitation in methanolic solutions. High- or low-temperature pyrolytic decomposition of the LHZN films having two-dimensional morphology was attempted to obtain porous ZnO nanosheet-assembly films. The LHZN films were converted into porous ZnO films by pyrolyzing at temperatures above 400 °C, while porous LHZN/ZnO hybrid films were obtained by pyrolyzing at a lower temperature of 120 °C without morphological changes. The pyrolyzed ZnO films were applied to dye-sensitized solar cells (DSSCs, resulting in the generation of relatively high open-circuit voltages. The low-temperature pyrolysis enabled us to fabricate the LHZN/ZnO film even on the plastic substrate. Actually a cell using the LHZN/ZnO film on an indium tin oxide-coated polyethylene naphthalate substrate showed an energy conversion efficiency of 2.08% with a high open-circuit voltage around 0.70 V.

Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

Energy Technology Data Exchange (ETDEWEB)

Iwan, S., E-mail: iwan-sugihartono@unj.ac.id [Jurusan Fisika, FMIPA-UNJ, Rawamangun, Jakarta (Indonesia); Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Fauzia, Vivi [Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Umar, A. A. [Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, UKM Bangi, Selangor (Malaysia); Sun, X. W. [School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue (Singapore)

2016-04-19

Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffraction peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.

Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers

Directory of Open Access Journals (Sweden)

Jang Bo Shim

2011-01-01

Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

Science.gov (United States)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

International Nuclear Information System (INIS)

Hezam, M.; Tabet, N.; Mekki, A.

2010-01-01

ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

International Nuclear Information System (INIS)

Arya, Sunil K.; Saha, Shibu; Ramirez-Vick, Jaime E.; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P.

2012-01-01

Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: ► This review highlights various approaches to synthesize ZnO nanostructures and thin films. ► Article highlights the importance of ZnO nanostructures as biosensor matrix. ► Article highlights the advances in various biosensors based on ZnO nanostructures. ► Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review

Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

Energy Technology Data Exchange (ETDEWEB)

Arya, Sunil K., E-mail: sunilarya333@gmail.com [Bioelectronics Program, Institute of Microelectronics, A-Star 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Ramirez-Vick, Jaime E. [Engineering Science and Materials Department, University of Puerto Rico, Mayaguez, PR 00681 (United States); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhansali, Shekhar [Department of Electrical and Computer Engineering, Florida International University, Miami, FL (United States); Singh, Surinder P., E-mail: singh.uprm@gmail.com [National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)

2012-08-06

Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: Black-Right-Pointing-Pointer This review highlights various approaches to synthesize ZnO nanostructures and thin films. Black-Right-Pointing-Pointer Article highlights the importance of ZnO nanostructures as biosensor matrix. Black-Right-Pointing-Pointer Article highlights the advances in various biosensors based on ZnO nanostructures. Black-Right-Pointing-Pointer Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO

Structural, optical and photocatalytic properties of flower-like ZnO nanostructures prepared by a facile wet chemical method

Directory of Open Access Journals (Sweden)

Sini Kuriakose

2013-11-01

Full Text Available Flower-like ZnO nanostructures were synthesized by a facile wet chemical method. Structural, optical and photocatalytic properties of these nanostructures have been studied by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, photoluminescence (PL and UV–vis absorption spectroscopy. SEM and TEM studies revealed flower-like structures consisting of nanosheets, formed due to oriented attachment of ZnO nanoparticles. Flower-like ZnO structures showed enhanced photocatalytic activity towards sun-light driven photodegradation of methylene blue dye (MB as compared to ZnO nanoparticles. XRD, UV–vis absorption, PL, FTIR and TEM studies revealed the formation of Zn(OH2 surface layer on ZnO nanostructures upon ageing. We demonstrate that the formation of a passivating Zn(OH2 surface layer on the ZnO nanostructures upon ageing deteriorates their efficiency to photocatalytically degrade of MB.

Significant improvement in performances of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} through surface modification with high ordered Al-doped ZnO electro-conductive layer

Energy Technology Data Exchange (ETDEWEB)

Sun, Hongdan; Xia, Bingbo [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Liu, Weiwei [Changzhou Institute of Energy Storage Materials & Devices, Changzhou 213000 (China); Fang, Guoqing; Wu, Jingjing; Wang, Haibo; Zhang, Ruixue [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Kaneko, Shingo [Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Zheng, Junwei [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Wang, Hongyu [Changzhou Institute of Energy Storage Materials & Devices, Changzhou 213000 (China); Li, Decheng, E-mail: lidecheng@suda.edu.cn [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China)

2015-03-15

Graphical abstract: Al-doped ZnO (AZO)-coated LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} (LNMO) was prepared by sol–gel method. AZO-coated LNMO electrode shows excellent rate capability and a remarkable improvement in the cyclic performance at a high rate at elevated temperature. - Highlights: • Al-doped ZnO (AZO)-coated LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} (LNMO) was prepared by a traditional sol–gel method. • Al-doped ZnO (AZO) layer grown on the surface of LNMO is high ordered. • At a high rate of 10 C, the discharge capacity of the AZO-coated LNMO electrode can reach 114 mAh g{sup −1}. • Al-doped ZnO (AZO) modification improved cyclic performance of LNMO at high temperatures. - Abstract: Al-doped ZnO (AZO)-coated LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} (LNMO) was prepared by sol–gel method. Transmission electron microscopy (TEM) analysis indicates that AZO layer grown on the surface of LNMO is high ordered. The results of electrochemical performance measurements reveal that the AZO-coated LNMO electrode displays the best rate capability compared with the bare LNMO and ZnO-coated LNMO, even at a high rate of 10 C. The discharge capacity of the AZO-coated LNMO electrode can still reach 114.3 mAh g{sup −1}, about 89% of its discharge capacity at 0.1 C. Moreover, AZO-coated LNMO electrode shows a remarkable improvement in the cyclic performance at a high rate at elevated temperature due to the protective effect of AZO coating layer. The electrode delivers a capacity of 120.3 mAh g{sup −1} with the capacity retention of 95% at 5 C in 50 cycles at 50 °C. The analysis of electrochemical impedance spectra (EIS) indicates that AZO-coated LNMO possesses the lowest charge transfer resistance compared to the bare LNMO and ZnO-coated LNMO, which may be responsible for improved rate capability.

Synthesis of nanofibrous ZnO by magnetron sputtering and its integration in dye-sensitized solar cells

International Nuclear Information System (INIS)

Ghimpu, L.; Tiginyanu, I.; Pauporte, T.; Guerin, V.M.; Lupan, O.

2013-01-01

This work demonstrates a cost-effective synthesis of nanofibrous ZnO layers by a magnetron sputtering. We present the results of layer characterization by scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectrometry, Raman spectroscopy, and photoluminescence which are indicative of good structural properties of the layers. The nanofibrous ZnO layers proves good structural properties offering a new nanomaterial for dye-sensitized solar cells (DSCs) application. Their successful integration in DSC for solar energy conversion is demonstrated by impedance spectroscopy, and photo-current-voltage (J-V) studies.

Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

OpenAIRE

Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

2016-01-01

We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-?m line width, 9-?m pitch, and 6-?m height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed...

Photoluminescence of spray pyrolysis deposited ZnO nanorods

Directory of Open Access Journals (Sweden)

Mikli Valdek

2011-01-01

Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

Hybrid Organic/ZnO p-n Junctions with n-Type ZnO Grown by Atomic Layer Deposition

Science.gov (United States)

Łuka, G.; Krajewski, T.; Szczerbakow, A.; Łusakowska, E.; Kopalko, K.; Guziewicz, E.; Wachnicki, Ł.; Szczepanik, A.; Godlewski, M.; Fidelus, J. D.

2008-11-01

We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Energy Technology Data Exchange (ETDEWEB)

Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Muñoz-Rojas, David [LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France); Nelson, Shelby F. [Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States); Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Roozeboom, Fred [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB (Netherlands)

2015-04-01

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

The influence of ZnO incorporation on the aqueous leaching characteristics of a borosilicate glass

Science.gov (United States)

Vance, E. R.; Gregg, D. J.; Karatchevtseva, I.; Griffiths, G. J.; Olufson, K.; Rees, Gregory J.; Hanna, John V.

2017-10-01

With increasing ZnO content, short term aqueous durability enhancement of all elements in borosilicate glasses containing 1.0 and 3.85 wt% ZnO was evident in 7-day PCT-B tests. In 14-day MCC-1 type leach tests conducted at 90 °C, surface alteration was very clear in the undoped glass via the formation of strongly altered amorphous material which tended to spall off the surface. No sign of crystallinity was detected by grazing incidence X-ray diffraction or electron microscopy of the surface layers and the surface material was very rich in silica. For the ZnO-bearing glasses, significant growth of particles following PCT leaching for 7 days was observed, due to a build-up of surface ZnO-containing Si-rich material and possible agglomeration. This alteration layer was also observed in MCC-1 type experiments in which cross-section SEM-EDS data were obtained. Raman, infrared and 11B and 29Si MAS NMR spectroscopy showed only slight changes in boron speciation on the addition of up to 9.1 wt% ZnO. Bulk positron annihilation lifetime spectra (PALS) of glasses containing 0-3.85 wt% ZnO could be analysed with three distinct lifetimes and also showed only slight differences. These results indicate that the basic glass structure was essentially not influenced by the ZnO content and that the passivation of the alteration layer is promoted by ZnO content.

Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

KAUST Repository

Jagadamma, Lethy Krishnan

2015-04-22

A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Time-resolved photon echoes from donor-bound excitons in ZnO epitaxial layers

Science.gov (United States)

Poltavtsev, S. V.; Kosarev, A. N.; Akimov, I. A.; Yakovlev, D. R.; Sadofev, S.; Puls, J.; Hoffmann, S. P.; Albert, M.; Meier, C.; Meier, T.; Bayer, M.

2017-07-01

The coherent optical response from 140 nm and 65 nm thick ZnO epitaxial layers is studied using four-wave-mixing spectroscopy with picosecond temporal resolution. Resonant excitation of neutral donor-bound excitons results in two-pulse and three-pulse photon echoes. For the donor-bound A exciton (D0XA ) at temperature of 1.8 K we evaluate optical coherence times T2=33 -50 ps corresponding to homogeneous line widths of 13 -19 μ eV , about two orders of magnitude smaller as compared with the inhomogeneous broadening of the optical transitions. The coherent dynamics is determined mainly by the population decay with time T1=30 -40 ps, while pure dephasing is negligible. Temperature increase leads to a significant shortening of T2 due to interaction with acoustic phonons. In contrast, the loss of coherence of the donor-bound B exciton (D0XB ) is significantly faster (T2=3.6 ps ) and governed by pure dephasing processes.

ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano-LEDs

Energy Technology Data Exchange (ETDEWEB)

Bakin, A.; El-Shaer, A.; Mofor, A.C.; Al-Suleiman, M.; Schlenker, E.; Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

2007-07-01

ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques is of special importance for the realization of unique device structures. MBE was implemented for ZnO-based layer and heterostructure growth. Pronounced RHEED oscillations were used for growth control and optimisation, resulting in high quality ZnO and Zn{sub 1-x}Mg{sub x}O epilayers and heterostructures, as well as ZnMgO/ZnO quantum wells on sapphire and SiC substrates. A novel advanced VPT approach is developed and sapphire, SiC, ZnO epitaxial layers, and even plastic and glass were implemented as substrates for ZnO growth. The VPT fabrication of ZnO nanopillars, leading to well aligned, c-axis oriented nanopillars with excellent quality and purity is demonstrated. Successful steps were made towards device fabrication on ZnO basis. The nanopillar fabrication technique is combined with MBE technology: MBE-grown ZnMgO/ZnO quantum well structures were grown on ZnO nanopillars presenting significant progress towards nano-LEDs realization. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek; Saadat, Irfan; Saraswat, Krishna; Nayfeh, Ammar

2017-01-01

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek

2017-10-19

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Hu, Zhan-Shuo [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hung, Fei-Yi, E-mail: fyhung@mail.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Chen, Kuan-Jen [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); The Instrument Center, National Cheng Kung University, Tainan 701, Taiwan (China); Chang, Shoou-Jinn [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China); Hsieh, Wei-Kang; Liao, Tsai-Yu; Chen, Tse-Pu [Institute of Microelectronics, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

2013-08-15

The degraded performance of annealed ZnO-based photodetector can be recovered by embedding Ag{sub 2}O nanoparticles resulted from the transformation of as-deposited Ag layer. After thermal treatment, the electrons were attracted at the interface between ZnO and Ag{sub 2}O. The excess Ag{sup +} ions form the cluster to incorporate into the interstitial sites of ZnO lattice to create a larger amount of lattice defects for the leakage path. The photo-current of ZnO film with Ag{sub 2}O nanoparticles is less than annealed ZnO film because the photo-induced electrons would flow into Ag{sub 2}O side. ZnO photodetector with the appropriate Ag{sub 2}O nanoparticles possesses the best rejection ratio.

Effect of Different Seed Solutions on the Morphology and Electrooptical Properties of ZnO Nanorods

Directory of Open Access Journals (Sweden)

M. Kashif

2012-01-01

Full Text Available The morphology and electrooptical properties of ZnO nanorods synthesized on monoethanolamine-based seed layer and KOH-based seed layer were compared. The seed solutions were prepared in monoethanolamine in 2-methoxyethanol and potassium hydroxide in methanol, respectively. Zinc acetate dihydrate was as a common precursor in both solutions. The nanorod-ZnOs were synthesized via the spin coating of two different seed solutions on silicon substrates followed by their hydrothermal growth. The scanning electron microscopy (SEM, X-ray diffraction (XRD, photoluminescence (PL, and Raman studies revealed that the ZnO nanorods obtained from monoethanolamine-based seed layer had fewer defects, better crystals, and better alignment than those realized via KOH-based seed layer. However, the current-voltage (I-V characteristics demonstrated better conductivity of the ZnO nanorods obtained via KOH-based seed layer. The current measured in forward bias was 4 mA and 40 μA for ZnO-nanorods grown on KOH-based seed layer and monoethanolamine-based with the turn on voltage of approximately 1.5 V and 2.5 V, respectively, showing the feasibility of using both structures in optoelectric devices.

Synthesis of Vertically Aligned ZnO Nano rods on Various Substrates

International Nuclear Information System (INIS)

Hassan, J.J.; Hassan, Z.; Abu Hassan, H.; Mahdi, M.A.

2011-01-01

We successfully synthesized vertically aligned ZnO nano rods on Si, GaN, Sic, Al 2 O 3 , ITO, and quartz substrates using microwave assisted chemical bath deposition (MA-CBD) method. All these types of substrates were seeded with PVA-ZnO nano composites layer prior to the nano rods growth. The effect of substrate type on the morphology of the ZnO nano rods was studied. The diameter of grown ZnO nano rods ranged from 50 nm to 200 nm. Structural quality and morphology of ZnO nano rods were determined by x-ray diffraction and scanning electron microscopy, which revealed hexagonal wurtzite structures perpendicular to the substrate along the z-axis in the direction of (002). Photoluminescence measurements of grown ZnO nano rods on all substrates exhibited high UV peak intensity. Raman scattering studies were conducted to estimate the lattice vibration modes. (author)

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

Energy Technology Data Exchange (ETDEWEB)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M. [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hassan, Z. [Institute of Nano-Optoelectronics Research and Technology Laboratory (INOR), Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2016-07-19

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and UV-Vis spectrophotometer.

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

International Nuclear Information System (INIS)

Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

2009-01-01

Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

PFE: ZnO hybrid nanocomposites for OLED applications: Fabrication and photophysical properties

Energy Technology Data Exchange (ETDEWEB)

Belhaj, M. [Université de Monastir, Faculté des sciences de Monastir, Département de physique, Laboratoire des Interfaces et des Matériaux Avancés, 5019 Monastir (Tunisia); Dridi, C., E-mail: cherif.Dridi@issatso.rnu.tn [Université de Monastir, Faculté des sciences de Monastir, Département de physique, Laboratoire des Interfaces et des Matériaux Avancés, 5019 Monastir (Tunisia); Université de Sousse, Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Cité Ettafala, 4003 Ibn Khaldoun Sousse (Tunisia); Elhouichet, H. [Centre National de Recherches en Sciences des Matériaux, Laboratoire de physico-Chimie des Matériaux Minéreaux et leurs applications, B.P. 95 Hammam-Lif 2050 (Tunisia)

2015-01-15

In this work, ZnO nanoparticles (n-ZnO) and poly (9, 9-dioctyl-fluorenyl-2, 7-yleneethynylene) (PFE): n-ZnO based thin films were spin-coated onto glass substrates. Structural, morphological and optical properties of ZnO, PFE and the PFE: n-ZnO hybrid films with different n-ZnO mass ratios were investigated. n-ZnO films obtained by sol–gel technique are polycrystalline with a hexagonal wurtzite structure. They are also homogenous with an average grain size of about 35 nm. For polymer nanocomposite, the optical properties are closely related to the ZnO content in the mixture. Among the tested active layers, the best performance is observed for that containing 2 wt% of ZnO nanoparticles. - Highlights: • We have analyzed the optical properties of PFE: ZnO nanocomposites . • We have optimized the best PFE: ZnO nanocomposite for the OLED application. • We have demonstrated the feasibility of white OLED devices.

PFE: ZnO hybrid nanocomposites for OLED applications: Fabrication and photophysical properties

International Nuclear Information System (INIS)

Belhaj, M.; Dridi, C.; Elhouichet, H.

2015-01-01

In this work, ZnO nanoparticles (n-ZnO) and poly (9, 9-dioctyl-fluorenyl-2, 7-yleneethynylene) (PFE): n-ZnO based thin films were spin-coated onto glass substrates. Structural, morphological and optical properties of ZnO, PFE and the PFE: n-ZnO hybrid films with different n-ZnO mass ratios were investigated. n-ZnO films obtained by sol–gel technique are polycrystalline with a hexagonal wurtzite structure. They are also homogenous with an average grain size of about 35 nm. For polymer nanocomposite, the optical properties are closely related to the ZnO content in the mixture. Among the tested active layers, the best performance is observed for that containing 2 wt% of ZnO nanoparticles. - Highlights: • We have analyzed the optical properties of PFE: ZnO nanocomposites . • We have optimized the best PFE: ZnO nanocomposite for the OLED application. • We have demonstrated the feasibility of white OLED devices

Structure and photoluminescence properties of Ag-coated ZnO nano-needles

Energy Technology Data Exchange (ETDEWEB)

Li Xiaozhu, E-mail: Lixiaozhu1019@21cn.com [Department of Physics, Shaoguan University, Shaoguan, Guangdong 512005 (China) and Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan, Hubei 430072 (China); Wang Yongqian [Engineering Research Center of Nano-Geomaterials of Ministry of Education (China University of Geosciences), Wuhan, Hubei 430074 (China)

2011-05-12

Highlights: > ZnO nano-needles were synthesized by thermal oxidation. > Their surfaces were coated with Ag by pulse electro-deposition technique. > The uncoated and coated ZnO nano-needles were characterized. > The results showed that the prepared ZnO nano-needles have been coated with Ag successfully. > The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the Ag-coated ZnO nano-needles can increase the absorption of UV light. - Abstract: A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 {mu}m. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

Science.gov (United States)

Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

2009-05-01

Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

International Nuclear Information System (INIS)

Shandilya, Swati; Sreenivas, K; Gupta, Vinay; Tomar, Monika

2009-01-01

Highly c-axis oriented LiNbO 3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO 3 films under the optimized deposition condition. An extra peak at 905 cm -1 was observed in the Raman spectra of LiNbO 3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO 3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO 3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO 3 film and the Al : ZnO layer.

Effects of Substrate and Post-Growth Treatments on the Microstructure and Properties of ZnO Thin Films Prepared by Atomic Layer Deposition

Science.gov (United States)

Haseman, Micah; Saadatkia, P.; Winarski, D. J.; Selim, F. A.; Leedy, K. D.; Tetlak, S.; Look, D. C.; Anwand, W.; Wagner, A.

2016-12-01

Aluminum-doped zinc oxide (ZnO:Al) thin films were synthesized by atomic layer deposition on silicon, quartz and sapphire substrates and characterized by x-ray diffraction (XRD), high-resolution scanning electron microscopy, optical spectroscopy, conductivity mapping, Hall effect measurements and positron annihilation spectroscopy. XRD showed that the as-grown films are of single-phase ZnO wurtzite structure and do not contain any secondary or impurity phases. The type of substrate was found to affect the orientation and degree of crystallinity of the films but had no effect on the defect structure or the transport properties of the films. High conductivity of 10-3 Ω cm, electron mobility of 20 cm2/Vs and carrier density of 1020 cm-3 were measured in most films. Thermal treatments in various atmospheres induced a large effect on the thickness, structure and electrical properties of the films. Annealing in a Zn and nitrogen environment at 400°C for 1 h led to a 16% increase in the thickness of the film; this indicates that Zn extracts oxygen atoms from the matrix and forms new layers of ZnO. On the other hand, annealing in a hydrogen atmosphere led to the emergence of an Al2O3 peak in the XRD pattern, which implies that hydrogen and Al atoms compete to occupy Zn sites in the ZnO lattice. Only ambient air annealing had an effect on film defect density and electrical properties, generating reductions in conductivity and electron mobility. Depth-resolved measurements of positron annihilation spectroscopy revealed short positron diffusion lengths and high concentrations of defects in all as-grown films. However, these defects did not diminish the electrical conductivity in the films.

Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

Science.gov (United States)

Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

2009-08-01

Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

Superhydrophobic ZnAl double hydroxide nanostructures and ZnO films on Al and glass substrates

Energy Technology Data Exchange (ETDEWEB)

De, Debasis, E-mail: debasis.de@bcrec.ac.in [Electronics and Instrumentation Engineering Department, Dr. B C Roy Engineering College, Durgapur, West Bengal 713206 (India); Sarkar, D.K. [Centre Universitaire de Recherche sur l' Aluminium (CURAL), L' Université du Québec à Chicoutimi, 555 Blvd. Université, Chicoutimi, Saguenay, Québec G7H 2B1 (Canada)

2017-01-01

Superhydrophobic nanostructured ZnAl: layered double hydroxides (LDHs) and ZnO films have been fabricated on Al and glass substrates, respectively, by a simple and cost effective chemical bath deposition technique. Randomly oriented hexagonal patterned of ZnAl: LDHs thin nanoplates are clearly observed on Al-substrate in the scanning electron microscopic images. The average size of these hexagonal plates is ∼4 μm side and ∼30 nm of thickness. While on the glass substrate, a oriented hexagonal patterned ZnO nanorods (height ∼5 μm and 1 μm diameter) are observed and each rod is further decorated throughout the top few nanometers with several nanosteps. At the top of the nanorod, a perfectly hexagonal patterned ZnO surface with ∼250 nm sides is observed. The tendency to form hexagonal morphological features is due to the hexagonal crystal structure of ZnO confirmed from X-ray diffraction patterns and transmission electron microscopy image. The ZnAl: LDHs and/or ZnO coated substrates have been passivated by using stearic acid (SA) molecules. Infrared spectra of passivated ZnAl: LDHs coated substrates confirm the presence of SA. X-ray diffraction pattern also corroborates the results of infrared spectrum. The contact angle of the as prepared samples is zero. The superhydrophobicity is achieved by observing contact angle of ∼161° with a hysteresis of ∼4° for Al-substrate. On the glass substrate, a higher contact angle of ∼168° with a lower hysteresis of ∼3° is observed. A lower surface roughness of ∼4.93 μm is measured on ZnAl: LDHs surface layer on the Al substrate as compare to a higher surface roughness of 6.87 μm measured on ZnO layer on glass substrate. The superhydrophobicity of passivated nanostructured films on two different substrates is observed due to high surface roughness and low surface energy. - Highlights: • ZnAl: layered double hydroxides (LDHs) nanoplates are fabricated on Al substrate. • ZnO nanorods are fabricated on

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

International Nuclear Information System (INIS)

Berruet, M.; Di Iorio, Y.; Troviano, M.; Vázquez, M.

2014-01-01

Solution-based techniques were used to prepare ZnO/CuIn(Se, S) 2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe 2 (CISe) and CuInSe 2−x S x (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO 2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe 2 or CuInSe 0.4 S 1.6 . • A TiO 2 buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction

SILAR controlled CdSe nanoparticles sensitized ZnO nanorods photoanode for solar cell application: Electrolyte effect.

Science.gov (United States)

Nikam, Pratibha R; Baviskar, Prashant K; Majumder, Sutripto; Sali, Jaydeep V; Sankapal, Babasaheb R

2018-08-15

Controlled growth of different sizes of cadmium selenide (CdSe) nanoparticles over well aligned ZnO nanorods have been performed using successive ionic layer adsorption and reaction (SILAR) technique at room temperature (27 °C) in order to form nano heterostructure solar cells. Deposition of compact layer of zinc oxide (ZnO) by SILAR technique on fluorine doped tin oxide (FTO) coated glass substrate followed by growth of vertically aligned ZnO nanorods array using chemical bath deposition (CBD) at low temperature (SILAR cycles for CdSe and with use of different electrolytes have been recorded as J-V characteristics and the maximum conversion efficiency of 0.63% have been attained with ferro/ferri cyanide electrolyte for 12 cycles CdSe coating over 1-D ZnO nanorods. Copyright © 2018 Elsevier Inc. All rights reserved.

Control of ZnO Nanorod Defects to Enhance Carrier Transportation in p-Cu₂O/i-ZnO Nanorods/n-IGZO Heterojunction.

Science.gov (United States)

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Mung, Nguyen Thi; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2017-01-01

The p-Cu₂O/i-ZnO nanorods/n-IGZO heterojunctions were fabricated by electrochemical and sputtering method. ZnO nanorods were grown on conductive indium gallium zinc oxide (IGZO) thin film and then p-Cu₂O layer was deposited on ZnO nanorods to form the heterojunction. ZnO nanorods play an important role in carrier transport mechanisms and performance of the junction. The changing of defects in ZnO nanorods by annealing samples in air and vacuum have studied. The XRD, photoluminescence (PL) spectroscopy, and FTIR were used to study about structure, and defects in ZnO nanorods. The SEM, i–V characteristics methods were also used to define structure, electrical properties of the heterojunctions layers. The results show that the defects in ZnO nanorods affected remarkably on performance of heterojunctions of solar cells.

Diameter optimization of VLS-synthesized ZnO nanowires, using statistical design of experiment

International Nuclear Information System (INIS)

Shafiei, Sepideh; Nourbakhsh, Amirhasan; Ganjipour, Bahram; Zahedifar, Mostafa; Vakili-Nezhaad, Gholamreza

2007-01-01

The possibility of diameter optimization of ZnO nanowires by using statistical design of experiment (DoE) is investigated. In this study, nanowires were synthesized using a vapor-liquid-solid (VLS) growth method in a horizontal reactor. The effects of six synthesis parameters (synthesis time, synthesis temperature, thickness of gold layer, distance between ZnO holder and substrate, mass of ZnO and Ar flow rate) on the average diameter of a ZnO nanowire were examined using the fractional factorial design (FFD) coupled with response surface methodology (RSM). Using a 2 III 6-3 FFD, the main effects of the thickness of the gold layer, synthesis temperature and synthesis time were concluded to be the key factors influencing the diameter. Then Box-Behnken design (BBD) was exploited to create a response surface from the main factors. The total number of required runs for the DoE process is 25, 8 runs for FFD parameter screening and 17 runs for the response surface obtained by BBD. Three extra runs are done to confirm the predicted results

Homogeneous ZnO nanostructure arrays on GaAs substrates by two-step chemical bath synthesis

International Nuclear Information System (INIS)

Huang, Chun-Yuan; Wu, Tzung-Han; Cheng, Chiao-Yang; Su, Yan-Kuin

2012-01-01

ZnO nanostructures, including nanowires, nanorods, and nanoneedles, have been deposited on GaAs substrates by the two-step chemical bath synthesis. It was demonstrated that the O 2 -plasma treatment of GaAs substrates prior to the sol–gel deposition of seed layers was essential to conformally grow the nanostructures instead of 2D ZnO bunches and grains on the seed layers. Via adjusting the growth time and concentration of precursors, nanostructures with different average diameter (26–225 nm), length (0.98–2.29 μm), and density (1.9–15.3 × 10 9 cm −2 ) can be obtained. To the best of our knowledge, this is the first demonstration of ZnO nanostructure arrays grown on GaAs substrates by the two-step chemical bath synthesis. As an anti-reflection layer on GaAs-based solar cells, the array of ZnO nanoneedles with an average diameter of 125 nm, a moderate length of 2.29 μm, and the distribution density of 9.8 × 10 9 cm −2 has increased the power conversion efficiency from 7.3 to 12.2 %, corresponding to a 67 % improvement.

Uniform Fe3O4 coating on flower-like ZnO nanostructures by atomic layer deposition for electromagnetic wave absorption.

Science.gov (United States)

Wan, Gengping; Wang, Guizhen; Huang, Xianqin; Zhao, Haonan; Li, Xinyue; Wang, Kan; Yu, Lei; Peng, Xiange; Qin, Yong

2015-11-21

An elegant atomic layer deposition (ALD) method has been employed for controllable preparation of a uniform Fe3O4-coated ZnO (ZnO@Fe3O4) core-shell flower-like nanostructure. The Fe3O4 coating thickness of the ZnO@Fe3O4 nanostructure can be tuned by varying the cycle number of ALD Fe2O3. When serving as additives for microwave absorption, the ZnO@Fe3O4-paraffin composites exhibit a higher absorption capacity than the ZnO-paraffin composites. For ZnO@500-Fe3O4, the effective absorption bandwidth below -10 dB can reach 5.2 GHz and the RL values below -20 dB also cover a wide frequency range of 11.6-14.2 GHz when the coating thickness is 2.3 mm, suggesting its potential application in the treatment of the electromagnetic pollution problem. On the basis of experimental observations, a mechanism has been proposed to understand the enhanced microwave absorption properties of the ZnO@Fe3O4 composites.

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Directory of Open Access Journals (Sweden)

Robert L. Z. Hoye

2015-04-01

Full Text Available Atmospheric pressure spatial atomic layer deposition (AP-SALD has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

Influence of the layer parameters on the performance of the CdTe solar cells

Science.gov (United States)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

Monocrystalline zinc oxide films grown by atomic layer deposition

International Nuclear Information System (INIS)

Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

2010-01-01

In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

Directory of Open Access Journals (Sweden)

Long Giang Bach

2016-01-01

Full Text Available We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002 crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110 preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm/ZnO (766 nm exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Alver, U., E-mail: alver@ksu.edu.tr [Department of Physics, Kahramanmaras Sutcu Imam University, K. Maras 46100 (Turkey); Zhou, W.; Belay, A.B. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States); Krueger, R. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Davis, K.O.; Hickman, N.S. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States)

2012-01-15

ZnO nanorods were grown on graphene oxide (GO) and reduced graphene oxide (RGO) films with seed layers by using simple hydrothermal method. The GO films were deposited by spray coating and then annealed at 400 Degree-Sign C in argon atmosphere to obtain RGO films. The optical and structural properties of the ZnO nanorods were systematically studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible spectroscopy. The XRD patterns and SEM images show that without a seed layer, no ZnO nanorod deposition occurs on GO or RGO films. Transmittance of ZnO nanorods grown on RGO films was measured to be approximately 83% at 550 nm. Furthermore, while transmittance of RGO films increases with ZnO nanorod deposition, transmittance of GO decreases.

Orientation-dependent chemistry and band-bending of Ti on polar ZnO surfaces.

Science.gov (United States)

Borghetti, Patrizia; Mouchaal, Younes; Dai, Zongbei; Cabailh, Gregory; Chenot, Stéphane; Lazzari, Rémi; Jupille, Jacques

2017-04-19

Orientation-dependent reactivity and band-bending are evidenced upon Ti deposition (1-10 Å) on polar ZnO(0001)-Zn and ZnO(0001[combining macron])-O surfaces. At the onset of the Ti deposition, a downward band-bending was observed on ZnO(0001[combining macron])-O while no change occurred on ZnO(0001)-Zn. Combining this with the photoemission analysis of the Ti 2p core level and Zn L 3 (L 2 )M 45 M 45 Auger transition, it is established that the Ti/ZnO reaction is of the form Ti + 2ZnO → TiO 2 + 2Zn on ZnO(0001)-Zn and Ti + yZnO → TiZn x O y + (y - x)Zn on ZnO(0001[combining macron])-O. Consistently, upon annealing thicker Ti adlayers, the metallic zinc is removed to leave ZnO(0001)-Zn surfaces covered with a TiO 2 -like phase and ZnO(0001[combining macron])-O surfaces covered with a defined (Ti, Zn, O) compound. Finally, a difference in the activation temperature between the O-terminated (500 K) and Zn-terminated (700 K) surfaces is observed, which is tentatively explained by different electric fields in the space charge layer at ZnO surfaces.

Structure and photoluminescence properties of Ag-coated ZnO nano-needles

International Nuclear Information System (INIS)

Li Xiaozhu; Wang Yongqian

2011-01-01

Highlights: → ZnO nano-needles were synthesized by thermal oxidation. → Their surfaces were coated with Ag by pulse electro-deposition technique. → The uncoated and coated ZnO nano-needles were characterized. → The results showed that the prepared ZnO nano-needles have been coated with Ag successfully. → The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the Ag-coated ZnO nano-needles can increase the absorption of UV light. - Abstract: A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 μm. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.

ZnO Thin Film Electronics for More than Displays

Science.gov (United States)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

Science.gov (United States)

Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

Structural and interfacial defects in c-axis oriented LiNbO{sub 3} thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

Energy Technology Data Exchange (ETDEWEB)

Shandilya, Swati; Sreenivas, K; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India)

2009-05-07

Highly c-axis oriented LiNbO{sub 3} films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO{sub 3} films under the optimized deposition condition. An extra peak at 905 cm{sup -1} was observed in the Raman spectra of LiNbO{sub 3} film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO{sub 3} films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO{sub 3} single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO{sub 3} film and the Al : ZnO layer.

Influence of Drying Temperature on the Structural, Optical, and Electrical Properties of Layer-by-Layer ZnO Nanoparticles Seeded Catalyst

Directory of Open Access Journals (Sweden)

S. S. Shariffudin

2012-01-01

Full Text Available Layer-by-layer zinc oxide (ZnO nanoparticles have been prepared using sol-gel spin coating technique. The films were dried at different temperature from 100°C to 300°C to study its effect to the surface morphology, optical and electrical properties of the films. Film dried at 200°C shows the highest (0 0 2 peak of X-ray diffraction pattern which is due to complete decomposition of zinc acetate and complete vaporization of the stabilizer and solvent. It was found that the grain size increased with the increased of drying temperature from 100 to 200°C, but for films dried at above 200°C, the grain size decreased. Photoluminescence measurements show a sharp ultraviolet emission centred at 380 nm and a very low intensity visible emission. Blue visible emission was detected for sample dried at temperature below 200°C, while for films dried above 250°C, the visible emission is red shifted. The films were transparent in the visible range from 400 to 800 nm with average transmittance of above 85%. Linear I-V characteristics were shown confirming the ohmic behaviour of the gold contacts to the films. A minimum resistivity was given by 5.08 Ω · cm for the film dried at 300°C.

Enhancement of the inverted polymer solar cells via ZnO doped with CTAB

Science.gov (United States)

Sivashnamugan, Kundan; Guo, Tzung-Fang; Hsu, Yao-Jane; Wen, Ten-Chin

2018-02-01

A facile approach enhancing electron extraction in zinc oxide (ZnO) electron transfer interlayer and improving performance of bulk-heterojunction (BHJ) polymer solar cells (PSCs) by adding cetyltrimethylammonium bromide (CTAB) into sol-gel ZnO precursor solution was demonstrated in this work. The power conversion efficiency (PCE) has a 24.1% increment after modification. Our results show that CTAB can dramatically influence optical, electrical and morphological properties of ZnO electron transfer layer, and work as effective additive to enhance the performance of bulk- heterojunction polymer solar cells.

Demonstration of a 100-kWth high-temperature solar thermochemical reactor pilot plant for ZnO dissociation

Science.gov (United States)

Koepf, E.; Villasmil, W.; Meier, A.

2016-05-01

Solar thermochemical H2O and CO2 splitting is a viable pathway towards sustainable and large-scale production of synthetic fuels. A reactor pilot plant for the solar-driven thermal dissociation of ZnO into metallic Zn has been successfully developed at the Paul Scherrer Institute (PSI). Promising experimental results from the 100-kWth ZnO pilot plant were obtained in 2014 during two prolonged experimental campaigns in a high flux solar simulator at PSI and a 1-MW solar furnace in Odeillo, France. Between March and June the pilot plant was mounted in the solar simulator and in-situ flow-visualization experiments were conducted in order to prevent particle-laden fluid flows near the window from attenuating transparency by blocking incoming radiation. Window flow patterns were successfully characterized, and it was demonstrated that particle transport could be controlled and suppressed completely. These results enabled the successful operation of the reactor between August and October when on-sun experiments were conducted in the solar furnace in order to demonstrate the pilot plant technology and characterize its performance. The reactor was operated for over 97 hours at temperatures as high as 2064 K; over 28 kg of ZnO was dissociated at reaction rates as high as 28 g/min.

Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates

International Nuclear Information System (INIS)

Kwon, Bong Jun; Lee, Kyung Moon; Shin, Hae-Young; Kim, Jinwoong; Liu, Jinzhang; Yoon, Seokhyun; Lee, Soonil; Ahn, Y.H.; Park, Ji-Yong

2012-01-01

Highlights: ► Arrays of vertical ultra-long ZnO nanowires with lengths upto 300 μm. ► Controls of lengths and diameters of vertical arrays of ZnO nanowires on SiO 2 substrates. ► Luminescent and electrical properties of ZnO nanowires prepared with different growth conditions. - Abstract: Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO 2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.

Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

Science.gov (United States)

Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

2015-11-01

Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

Science.gov (United States)

Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

In-situ ellipsometric characterization of the growth of porous anisotropic nanocrystalline ZnO layers

Energy Technology Data Exchange (ETDEWEB)

Laha, P., E-mail: plaha@vub.ac.be; Terryn, H.; Ustarroz, J., E-mail: justarro@vub.ac.be [Research Group Electrochemical and Surface Engineering (SURF), Vrije Universiteit Brussel, Pleinlaan 2, 1050 Elsene, Brussels (Belgium); Nazarkin, M. Y., E-mail: mikleo@mail.ru; Gavrilov, S. A. [Department of Materials of Functional Electronics (MFE), National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow 124498 (Russian Federation); Volkova, A. V.; Simunin, M. M. [Department of Quantum Physics and Nanoelectronics (QPN), National Research University of Electronic Technology, Bld. 5, Pas. 4806, Zelenograd, Moscow 124498 (Russian Federation)

2015-03-09

ZnO films have increasingly been in the spotlight due to their largely varied electro-physical and optical properties. For several applications, porous anisotropic nanocrystalline layers are especially interesting. To study the growth kinetics of such films during different fabrication processes, a powerful non-destructive in-situ technique is required. In this work, both ex-situ and in-situ spectroscopic ellipsometry are used along with advanced modelling techniques that are able to take both the anisotropy and the porosity of the films into account. Scanning electron microscopy, along with nitrogen absorption methods for measuring porosity, validated the ellipsometric data and proposed model. The film, grown by chemical bath deposition, was monitored from around 700 to 1800 nm in thickness. This same principle can now be used to monitor any other porous and/or anisotropic structure in an effective in-situ manner, e.g., growth of porous anodic aluminium oxides, nano-porous silica films, etc.

Self-assembled ZnO agave-like nanowires and anomalous superhydrophobicity

Energy Technology Data Exchange (ETDEWEB)

Yang, Y H; Li, Z Y; Wang, B; Wang, C X; Chen, D H; Yang, G W [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics Science and Engineering, Zhongshan University, Guangzhou 510275 (China)

2005-09-07

Thin films of ZnO agave-like nanowires were prepared on amorphous carbon thin layers on silicon substrates using thermal chemical vapour transport and condensation without any metal catalysts. The unusual superhydrophobicity of the fabricated surface was measured; the water contact angle reaches 151.1 deg. On the basis of experimental and theoretical analyses, it appears likely that the biomimetic microcomposite and nanocomposite surfaces of the prepared thin films of ZnO agave-like nanowires are responsible for the excellent superhydrophobicity.

Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

Directory of Open Access Journals (Sweden)

Deepu Thomas

2014-01-01

Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

Influence of the local absorber layer thickness on the performance of ZnO nanorod solar cells

Energy Technology Data Exchange (ETDEWEB)

Belaidi, Abdelhak; Dittrich, Thomas; Kieven, David; Tornow, Julian; Schwarzburg, Klaus; Lux-Steiner, Martha [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany)

2008-08-15

The local absorber layer thickness (d{sub local}) of solar cells with extremely thin absorber was changed between 10 nm and 70 nm. As a model system, ZnO nanorod arrays (electron conductor) with fixed internal surface area coated with In{sub 2}S{sub 3} (absorber) and impregnated with CuSCN (transparent hole conductor) were applied. The performance of the small area solar cells depended critically on d{sub local}. The highest short circuit current density was reached for the lowest d{sub local}. In contrast, the highest open circuit voltage was obtained for the highest d{sub local}. A maximum energy conversion efficiency of 3.4% at AM1.5 was achieved. Limiting factors are discussed.(copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Copper(II) Schiff base complexes and their mixed thin layers with ...

Indian Academy of Sciences (India)

Thin layer; ZnO nanoparticles; copper complexes; AFM; SEM; fluorescence. 1. Introduction ... ZnO nanopowders29,30 and ZnO nanoparticles doped by different metal ...... Roy S, Choubey S, Bhar K, Khan S, Mitra P and Ghosh. B K 2013 J. Mol ...

A template-free sol-gel technique for controlled growth of ZnO nanorod arrays

International Nuclear Information System (INIS)

Huang, N.; Zhu, M.W.; Gao, L.J.; Gong, J.; Sun, C.; Jiang, X.

2011-01-01

The growth of ZnO nanorod arrays via a template-free sol-gel process was investigated. The nanorod is single-crystalline wurtzite structure with [0 0 0 1] growth direction determined by the transmission electron microscope. The aligned ZnO arrays were obtained directly on the glass substrates by adjusting the temperatures and the withdrawal speeds, without seed-layer or template assistant. A thicker oriented ZnO nanorod arrays was obtained at proper experimental conditions by adding dip-coating layers. Room temperature photoluminescence spectrum exhibits an intensive UV emission with a weak broad green emission as well as a blue double-peak emission located at 451 and 468 nm, respectively. Further investigation results show that the difference in the alignment of nanorods ascribes to the different orientations of the nanoparticles-packed film formed prior to nanorods on the substrate. Well ordered ZnO nanorods are formed from this film with good c-axis orientation. Our study is expected to pave a way for direct growth of oriented nanorods by low-cost solution approaches.

Structural and optical properties of pentacene films grown on differently oriented ZnO surfaces

International Nuclear Information System (INIS)

El Helou, M; Lietke, E; Helzel, J; Heimbrodt, W; Witte, G

2012-01-01

Pentacene films have been grown on two polar zinc oxide surfaces, i.e., ZnO(0001) and ZnO(0 0 0 1-bar ), as well as on the mixed-terminated ZnO(1 0 1-bar 0) and are characterized by means of atomic force microscopy (AFM), x-ray diffraction (XRD), and thermal desorption spectroscopy (TDS). In all cases, pentacene aggregates in an upright orientation without any evidence for the formation of an interface stabilized wetting layer. Additional films deposited on a highly-defective, oxygen-depleted ZnO(0 0 0 1-bar ) reveal no altered growth mode. Nearly identical optical absorption spectra have been measured for all films, thus corroborating a weak molecule-substrate interaction. Upon cooling, however, a slightly different relaxation behavior could be resolved for pentacene films on polar ZnO surfaces compared to pentacene on the mixed-terminated ZnO(1 0 1-bar 0) surface.

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

Energy Technology Data Exchange (ETDEWEB)

Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

2014-12-15

Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

Characterization of CBD grown ZnO films with high c-axis orientation

Energy Technology Data Exchange (ETDEWEB)

Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

2012-06-15

Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

Enormous enhancement of ZnO nanorod photoluminescence

International Nuclear Information System (INIS)

Wang, Y.H.; Duan, W.J.; Wu, Z.L.; Zheng, D.; Zhou, X.W.; Zhou, B.Y.; Dai, L.J.; Wang, Y.S.

2012-01-01

ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation. - Highlights: ► ZnO nanorod arrays were grown on quartz slices in solution at 90 °C. ► The nanorods were capped by ZnO:Mg layers to form core/shell structures. ► ZnO:MgO shells suppress the green emission and enhance the UV emission intensity by 38 times. ► The enhancement depends on the Mg content in the shells. ► Exposing the nanorods to 325 laser beam improves the UV emission efficiently. ► Capping and 325 nm laser beam irradiation could enhance the nanorod UV emission intensity by 71 times.

Photoelectrochemical properties of the TiO2-ZnO nanorod hierarchical structure prepared by hydrothermal process

Directory of Open Access Journals (Sweden)

Bao SUN

2018-02-01

Full Text Available In order to increase the transport channels of the photogenerated electrons and enhance the photosensitizer loading ability of the electrode, a new TiO2-ZnO nanorod hierarchical structure is prepared through two-step hydrothermal process. First, TiO2 nanorod array is grown on the FTO conductive glass substrate by hydrothermal proess. Then, ZnO sol is coated onto the TiO2 nanorods through dip-coating method and inverted to ZnO seed layer by sintering. Finally, the secondary ZnO nanorods are grown onto the TiO2 nanorods by the sencond hydrothermal method to form the designed TiO2-ZnO nanorod hierarchical structure. A spin-coating assisted successive ionic layer reaction method (SC-SILR is used to deposit the CdS nanocrystals into the TiO2 nanorod array and the TiO2-ZnO nanorod hierarchical structure is used to form the CdS/TiO2 and CdS/TiO2-ZnO nanocomposite films. Different methods, such as SEM, TEM, XRD, UV-Vis and transient photocurrent, are employed to characterize and measure the morphologies, structures, light absorption and photoelectric conversion performance of all the samples, respectively. The results indicate that, compared with the pure TiO2 nanorod array, the TiO2-ZnO nanorod hierarchical structure can load more CdS photosensitizer. The light absorption properties and transient photocurrent performance of the CdS/TiO2-ZnO nanorod hierarchical structure composite film are evidently superior to that of the CdS/TiO2 nanocomposite films. The excellent photoelctrochemical performance of theTiO2-ZnO hierarchical structure reveales its application prospect in photoanode material of the solar cells.

Inhibitory effects of ZnO nanoparticles on aerobic wastewater biofilms from oxygen concentration profiles determined by microelectrodes

International Nuclear Information System (INIS)

Hou, Jun; Miao, Lingzhan; Wang, Chao; Wang, Peifang; Ao, Yanhui; Qian, Jin; Dai, Shanshan

2014-01-01

Highlights: • Temporal and spatial inhibitory effects of ZnO NPs on biofilms were investigated. • 50 mg/L nano-ZnO inhibited the microbial activities only in biofilm outer layer. • Adsorbed ZnO NPs had no adverse effects on the cell membrane integrity of biofilms. • Dissolution of ZnO NPs to toxic zinc ions was the main mechanism of toxicity. - Abstract: The presence of ZnO NPs in waste streams can negatively affect the efficiency of biological nutrient removal from wastewater. However, details of the toxic effects of ZnO NPs on microbial activities of wastewater biofilms have not yet been reported. In this study, the temporal and spatial inhibitory effects of ZnO NPs on the O 2 respiration activities of aerobic wastewater biofilms were investigated using an O 2 microelectrode. The resulting time–course microelectrode measurements demonstrated that ZnO NPs inhibited O 2 respiration within 2 h. The spatial distributions of net specific O 2 respiration were determined in biofilms with and without treatment of 5 or 50 mg/L ZnO NPs. The results showed that 50 mg/L of nano-ZnO inhibited the microbial activities only in the outer layer (∼200 μm) of the biofilms, and bacteria present in the deeper parts of the biofilms became even more active. Scanning electron microscopy (SEM) analysis showed that the ZnO NPs were adsorbed onto the biofilm, but these NPs had no adverse effects on the cell membrane integrity of the biofilms. It was found that the inhibition of O 2 respiration induced by higher concentrations of ZnO NPs (50 mg/L) was mainly due to the release of zinc ions by dissolution of the ZnO NPs

Inhibitory effects of ZnO nanoparticles on aerobic wastewater biofilms from oxygen concentration profiles determined by microelectrodes

Energy Technology Data Exchange (ETDEWEB)

Hou, Jun [Key Laboratory of Integrated Regulation and Resources Development on Shallow Lakes, Ministry of Education, Hohai University, Nanjing 210098 (China); College of Environment, Hohai University, Nanjing 210098 (China); Miao, Lingzhan, E-mail: mlz1988@126.com [Key Laboratory of Integrated Regulation and Resources Development on Shallow Lakes, Ministry of Education, Hohai University, Nanjing 210098 (China); College of Environment, Hohai University, Nanjing 210098 (China); Wang, Chao, E-mail: hhuhjy973@126.com [Key Laboratory of Integrated Regulation and Resources Development on Shallow Lakes, Ministry of Education, Hohai University, Nanjing 210098 (China); College of Environment, Hohai University, Nanjing 210098 (China); Wang, Peifang; Ao, Yanhui; Qian, Jin; Dai, Shanshan [Key Laboratory of Integrated Regulation and Resources Development on Shallow Lakes, Ministry of Education, Hohai University, Nanjing 210098 (China); College of Environment, Hohai University, Nanjing 210098 (China)

2014-07-15

Highlights: • Temporal and spatial inhibitory effects of ZnO NPs on biofilms were investigated. • 50 mg/L nano-ZnO inhibited the microbial activities only in biofilm outer layer. • Adsorbed ZnO NPs had no adverse effects on the cell membrane integrity of biofilms. • Dissolution of ZnO NPs to toxic zinc ions was the main mechanism of toxicity. - Abstract: The presence of ZnO NPs in waste streams can negatively affect the efficiency of biological nutrient removal from wastewater. However, details of the toxic effects of ZnO NPs on microbial activities of wastewater biofilms have not yet been reported. In this study, the temporal and spatial inhibitory effects of ZnO NPs on the O{sub 2} respiration activities of aerobic wastewater biofilms were investigated using an O{sub 2} microelectrode. The resulting time–course microelectrode measurements demonstrated that ZnO NPs inhibited O{sub 2} respiration within 2 h. The spatial distributions of net specific O{sub 2} respiration were determined in biofilms with and without treatment of 5 or 50 mg/L ZnO NPs. The results showed that 50 mg/L of nano-ZnO inhibited the microbial activities only in the outer layer (∼200 μm) of the biofilms, and bacteria present in the deeper parts of the biofilms became even more active. Scanning electron microscopy (SEM) analysis showed that the ZnO NPs were adsorbed onto the biofilm, but these NPs had no adverse effects on the cell membrane integrity of the biofilms. It was found that the inhibition of O{sub 2} respiration induced by higher concentrations of ZnO NPs (50 mg/L) was mainly due to the release of zinc ions by dissolution of the ZnO NPs.

Growth and properties of ZnO films on polymeric substrate by spray pyrolysis method

Energy Technology Data Exchange (ETDEWEB)

Kriisa, Merike; Kärber, Erki [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, Malle, E-mail: malle.krunks@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, Valdek [Centre for Materials Research, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Unt, Tarmo; Kukk, Mart; Mere, Arvo [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

2014-03-31

The growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied. Zinc acetate precursor solution was sprayed onto preheated polyimide (PI) and glass reference substrates at 380 °C. The structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method. ZnO:In layers could be grown on PI when deposited onto undoped ZnO layer acting as a buffer layer on PI. Independent of the substrate type, the ZnO/ZnO:In bilayer showed a mixed morphology from smooth canvas-like surface to large scrolled belt grains dependent on buffer layer morphology. Due to the formation of scrolled belts, the ZnO:In layer shows no preferential orientation, yet the preferred orientation of the ZnO buffer crystallites is (100) plane parallel to the substrate. The bilayers deposited on PI exhibit high light scattering capability (haze factor of 85–95% in the spectral region of 350–1500 nm). The resistivity of the ZnO:In film in bilayer on PI is 4.4 × 10{sup −2} Ω cm mainly due to low carrier mobility of 1.5 cm{sup 2}/Vs, the carrier concentration is 10{sup 20} cm{sup −3}. - Highlights: • ZnO:In layers were grown on polyimide substrate by spray pyrolysis. • The buffer layer morphology is controlled by the layer thickness and spray rate. • ZnO/ZnO:In bilayer morphology is dependent on the surface of buffer layer. • Rough buffer layer leads to rough bilayer with scrolled belts (diameter of 2–6 μm). • Due to scrolled belts layers show no preferential growth yet highly scatter light.

Microstructural and optical properties of nanocrystalline ZnO deposited onto vertically aligned carbon nanotubes by physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Borkar, Tushar [Department of Materials Science and Engineering and Center for Advanced Research and Technology, University of North Texas, Denton 76203 (United States); Chang, Won Seok [Korea Institute of Machinery and Materials, 104 Sinseongno, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Hwang, Jun Yeon, E-mail: Junyeon.Hwang@kist.re.kr [Department of Materials Science and Engineering and Center for Advanced Research and Technology, University of North Texas, Denton 76203 (United States); Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-902 (Korea, Republic of); Shepherd, Nigel D.; Banerjee, Rajarshi [Department of Materials Science and Engineering and Center for Advanced Research and Technology, University of North Texas, Denton 76203 (United States)

2012-10-15

Nanocrystalline ZnO films with thicknesses of 5 nm, 10 nm, 20 nm, and 50 nm were deposited via magnetron sputtering onto the surface of vertically aligned multi-walled carbon nanotubes (MWCNTs). The ZnO/CNTs heterostructures were characterized by scanning electron microscopy, high resolution transmission electron microscopy, and X-ray diffraction studies. No structural degradation of the CNTs was observed and photoluminescence (PL) measurements of the nanostructured ZnO layers show that the optical properties of these films are typical of ZnO deposited at low temperatures. The results indicate that magnetron sputtering is a viable technique for growing heterostructures and depositing functional layers onto CNTs.

Thermally induced growth of ZnO nanocrystals on mixed metal oxide surfaces.

Science.gov (United States)

Inayat, Alexandra; Makky, Ayman; Giraldo, Jose; Kuhnt, Andreas; Busse, Corinna; Schwieger, Wilhelm

2014-06-23

An in situ method for the growth of ZnO nanocrystals on Zn/Al mixed metal oxide (MMO) surfaces is presented. The key to this method is the thermal treatment of Zn/Al layered double hydroxides (Zn/Al LDHs) in the presence of nitrate anions, which results in partial demixing of the LDH/MMO structure and the subsequent crystallization of ZnO crystals on the surface of the forming MMO layers. In a first experimental series, thermal treatment of Zn/Al LDHs with different fractions of nitrate and carbonate in the interlayer space was examined by thermogravimetry coupled with mass spectrometry (TG-MS) and in situ XRD. In a second experimental series, Zn/Al LDHs with only carbonate in the interlayer space were thermally treated in the presence of different amounts of an external nitrate source (NH4NO3). All obtained Zn/Al MMO samples were analysed by electron microscopy, nitrogen physisorption and powder X-ray diffraction. The gas phase formed during nitrate decomposition turned out to be responsible for the formation of crystalline ZnO nanoparticles. Accordingly, both interlayer nitrate and the presence of ammonium nitrate led to the formation of supported ZnO nanocrystals with mean diameters between 100 and 400 nm, and both methods offer the possibility to tailor the amount and size of the ZnO crystals by means of the amount of nitrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

International Nuclear Information System (INIS)

Cao, Huawei; Lu, Pengfei; Cong, Zixiang; Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong; Gao, Tao; Wang, Shumin

2013-01-01

Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material

Magnetic properties in (Mn,Fe)-codoped ZnO nanowire

Energy Technology Data Exchange (ETDEWEB)

Cao, Huawei [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Cong, Zixiang [School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100976 (China); Yu, Zhongyuan; Cai, Ningning; Zhang, Xianlong [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876 (China); Gao, Tao [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Wang, Shumin [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-12-02

Using the first-principles density functional theory, we have studied the electronic structures and magnetic properties of Mn/Fe codoped ZnO nanowires systematically. The calculated results of formation energy indicate that the configuration of the lowest energy where Mn and Fe atoms form nearest neighbors on the outer cylindrical surface layer along the [0001] direction, will be determined. The magnetic coupling of 8 types of Mn/Fe codoped ZnO nanowires was investigated and ferromagnetic state was found in certain configurations. The mechanism is from the fierce hybridization between 3d of Mn and Fe with O 2p near the Fermi level. The relative energy difference for configuration VIII is 0.221 eV, which indicates that room temperature ferromagnetism could be obtained in such a system and Mn/Fe codoped ZnO nanowires are a promising nanoscale spintronic material. - Highlights: • The stable structure prefers that Mn/Fe form nearest neighbors on the outer surface. • The fierce p–d hybridization is responsible for ferromagnetic (FM) coupling. • Mn/Fe codoped ZnO nanowire is a promising FM semiconductor material.

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

International Nuclear Information System (INIS)

Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

2012-01-01

ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Energy Technology Data Exchange (ETDEWEB)

Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

2012-05-15

ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Scaling up manufacturing of ZnO thin layers for application in flexible dye-sensitized solar cells; Aufskalierung der Herstellung von ZnO-Duennschichten fuer die Anwendung in flexiblen farbstoffsensibilisierten Solarzellen

Energy Technology Data Exchange (ETDEWEB)

Bittner, Florian

2012-10-19

Flexible solar cells possess good future prospects for versatile mobile applications and can provide an important environmental benefit. One of the technologies permitting flexible solar cells is that of dye-sensitized solar cells. Among other advantages the fabrication of these organic-inorganic hybrid solar cells promises to be inexpensive in comparison to other technologies. Nanoparticular TiO{sub 2} is used predominantly as the semiconducting photoanode material; however its preparation route contains a tempering step at about 450 C, which impedes the use of flexible plastic substrates - at least with the method established for dye-sensitized solar cells. An alternative to TiO{sub 2} is ZnO, which can be fabricated for example in an electrochemical process at temperatures of only 70 C in the form of porous quasicrystalline layers. To create porosity the dye eosin Y is used as structure-directing agent. In the context of this study layers prepared by this method were compared to ZnO layers prepared by screen printing. This was performed on glass based substrates. Better conversion efficiency has been determined for dye-sensitized solar cells based on electrochemical deposited layers, while other results indicated advantages for the screen printed layers. As the morphologies of the available screen printed layers proved to be unfavourable and poorly comparable, a concluding statement on the suitability of the different types of layers was eventually not possible. Furthermore a technical simple and inexpensive method for the platinum coating of plastic substrates, which are used as counter electrodes, was tried to be determined. However, layers prepared by technically relatively complex sputtering exhibited by far better properties than layers prepared by electrochemical deposition or by chemical reduction of platinum salts. Thus, the targeted objective has not been reached. The central scope of this study was the development of an electrochemical deposition setup

Dynamics of the deep-level emission in ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

2010-07-01

Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films

International Nuclear Information System (INIS)

Wang, Canxing; Jiang, Haotian; Li, Yunpeng; Ma, Xiangyang; Yang, Deren

2013-01-01

Random lasing (RL) in polycrystalline ZnO films is an intriguing research subject. Here, we have comparatively investigated electrically pumped RL behaviors of two metal-insulator-semiconductor structured devices using the hydrothermal and sputtered ZnO films as the semiconductor components, i.e., the light-emitting layers, respectively. It is demonstrated that the device using the hydrothermal ZnO film exhibits smaller threshold current and larger output optical power of the electrically pumped RL. The morphological characterization shows that the hydrothermal ZnO film is somewhat porous and is much rougher than the sputtered one, suggesting that in the former stronger multiple light scattering can occur. Moreover, the photoluminescence characterization indicates that there are fewer defects in the hydrothermal ZnO film than in the sputtered one, which means that the photons can pick up larger optical gain through stimulated emission in the hydrothermal ZnO film. Therefore, it is believed that the stronger multiple light scattering and larger optical gain contribute to the improved performance of the electrically pumped RL from the device using the hydrothermal ZnO film