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Sample records for zno nanostructures grown

  1. Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

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    Pineda-Hernandez, G. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Escobedo-Morales, A., E-mail: alejandroescobedo@hotmail.com [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Postal J-48, C.P. 72570 Puebla, Pue. (Mexico); Chigo-Anota, E. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico)

    2012-08-15

    In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed. -- Highlights: Black-Right-Pointing-Pointer Ga doped ZnO nanostructures were successfully grown by hydrothermal chemical route. Black-Right-Pointing-Pointer Ga doping has strong effect on the resulting morphology of ZnO nanostructures. Black-Right-Pointing-Pointer Anomalous vibrational modes in wurtzite ZnO lattice are induced by Ga doping. Black-Right-Pointing-Pointer Incorporated Ga atoms accommodate at preferential lattice sites.

  2. Sensing performances of ZnO nanostructures grown under different oxygen pressures to hydrogen

    International Nuclear Information System (INIS)

    Chu, Jin; Peng, Xiaoyan; Wang, Zhenbo; Feng, Peter

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► Surface morphology depends on the oxygen pressure. ► Structural degradation was observed for the ZnO samples when oxygen pressure was overhigh. ► The sensitivity of the ZnO-based sensors increase with grown oxygen pressure. -- Abstract: For extensive use in an industrialized process of individual ZnO nanostructures applied in gas sensors, a simple, inexpensive, and safe synthesis process is required. Here, nanostructured ZnO films were grown by a pulsed laser deposition technique under different oxygen pressures. Scanning electron microscopy images show nanopores, nanotips, and nanoparticles are obtained and energy dispersive X-ray spectroscopy data indicate oxygen concentration of the synthesized samples increases monotonously with oxygen pressure. The sensor based on ZnO with high oxygen concentration has high sensitivity, rapid response (9 s) and recovery (80 s) behavior to 500 ppm hydrogen below 150 °C. Experimental data indicate that high oxygen concentration effectively improves the sensing properties of nanostructured ZnO.

  3. Strain modulated defect luminescence in ZnO nanostructures grown on Si substrates

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    Chen, Hung-Ing; Hsiao, Jui-Ju; Huang, Yi-Jen; Wang, Jen-Cheng [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China); Wu, Ya-Fen [Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei 243, Taiwan, ROC (China); Lu, Bing-Yuh [Department of Electrical Engineering, Tun Gnan University, Shenkeng, New Taipei 222, Taiwan, ROC (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China)

    2015-12-15

    The strain modulated defect green luminescence from ZnO nanostructures grown on silicon substrates has been investigated in-depth. According to the Warren–Averbach Fourier analysis of the X-ray diffraction profiles, both the internal strain and the average crystallite size of the well-ordered nano-size ZnO nanostructures could be subtly modulated by careful adjustment of the aqueous solution of zinc nitrate (Zn(NO{sub 3}){sub 2}) and ammonium hydroxide (NH{sub 3}OH) used in the hydrothermal treatment. Visible defect-related and ultraviolet band-to-band emissions were characterized using temperature-dependent photoluminescence measurements over a broad temperature range from 20 to 300 K. It was found that the thermal-related tensile strain led to the blueshift of the green emission with increasing temperature, while the violet and ultraviolet emissions were thermally insensitive. These spectral observations were substantially corroborated by the deformation potential theory. - Highlights: • The strain modulated defect green luminescence from ZnO nanostructures. • Visible and ultraviolet emissions were characterized using photoluminescence. • The tensile strain led to the blueshift of the green emission. • The spectral observations were corroborated by the deformation potential theory.

  4. Photoluminescence quenching, structures, and photovoltaic properties of ZnO nanostructures decorated plasma grown single walled carbon nanotubes

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    Aïssa, Brahim, E-mail: brahim.aissa@mpbc.ca [University of Quebec, Centre Énergie, Matériaux et Télécommunications, INRS-EMT (Canada); Nedil, Mourad [Telebec Wireless Underground Communication Laboratory, UQAT (Canada); Belaidi, Abdelhak; Isaifan, Rima J. [Hamad Bin Khalifa University, Qatar Foundation, Qatar Environment and Energy Research Institute (Qatar); Bentouaf, Ali [University Hassiba Ben Bouali, Physics Department, Faculty of Science (Algeria); Fauteux, Christian; Therriault, Daniel [École Polytechnique de Montréal, Laboratory for Multiscale Mechanics (LM2), Mechanical Engineering Department (Canada)

    2017-05-15

    Zinc oxide (ZnO) nanostructures were successfully grown directly on single walled carbon nanotubes (SWCNT) template through the CO{sub 2} laser-induced chemical liquid deposition (LCLD) process. Photoluminescence (PL) of the deposited ZnO/SWCNT hybrid composites exhibits, at room temperature, a narrow near UV band located at 390 nm with no emission bands in the visible region, indicating a high degree of crystalline quality of the ZnO nanostructures. Moreover, when the relative SWCNT loads are varied within the composites, the PL intensity and the diffused optical reflectance diminish in comparison with those of ZnO alone, owing to the transfer of photo-excited electrons from ZnO to the SWCNT, and the enhancement of the optical absorbance, respectively. Finally, these ZnO/SWCNT hybrid composites are integrated into a heterojunction photovoltaic-based device, using PEDOT:PSS on ITO/glass substrate. The devices show an evident p–n junction behavior in the dark, and a clear I–V curve shift downward when illuminated with an open-circuit voltage of 1.1 V, a short circuit current density of 14.05 μA cm{sup −2}, and a fill factor of ∼35%. These results indicate that these composites fabricated via LCLD process could be promising for optoelectronic and energy-harvesting devices.

  5. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

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    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  6. Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH Sensors

    Science.gov (United States)

    Bazilah Rosli, Aimi; Awang, Zaiki; Sobihana Shariffudin, Shafinaz; Herman, Sukreen Hana

    2018-03-01

    Zinc Oxide (ZnO) nanostructures were deposited using chemical bath deposition (CBD) technique in water bath at 95 °C for 4 h. Post-deposition heat treatment in air ambient at various temperature ranging from 200-600 °C for 30 min was applied in order to enhance the electrical properties of ZnO nanostructures as the sensing membrane of extended-gate field effect transistor (EGFET) pH sensor. The as-deposited sample was prepared for comparison. The samples were characterized in terms of physical and sensing properties. FESEM images showed that scattered ZnO nanorods were formed for the as-deposited sample, and the morphology of the ZnO nanorods changed to ZnO nanoflowers when the heat treatment was applied from 200-600 °C. For sensing properties, the samples heated at 300 °C showed the higher sensitivity which was 39.9 mV/pH with the linearity of 0.9792. The sensing properties was increased with the increasing annealing treatment temperature up to 300 °C before decreased drastically.

  7. ZnO nanostructures directly grown on paper and bacterial cellulose substrates without any surface modification layer.

    Science.gov (United States)

    Costa, Saionara V; Gonçalves, Agnaldo S; Zaguete, Maria A; Mazon, Talita; Nogueira, Ana F

    2013-09-21

    In this report, hierarchical ZnO nano- and microstructures were directly grown for the first time on a bacterial cellulose substrate and on two additional different papers by hydrothermal synthesis without any surface modification layer. Compactness and smoothness of the substrates are two important parameters that allow the growth of oriented structures.

  8. Hybrid nanostructure heterojunction solar cells fabricated using vertically aligned ZnO nanotubes grown on reduced graphene oxide.

    Science.gov (United States)

    Yang, Kaikun; Xu, Congkang; Huang, Liwei; Zou, Lianfeng; Wang, Howard

    2011-10-07

    Using reduced graphene oxide (rGO) films as the transparent conductive coating, inorganic/organic hybrid nanostructure heterojunction photovoltaic devices have been fabricated through hydrothermal synthesis of vertically aligned ZnO nanorods (ZnO-NRs) and nanotubes (ZnO-NTs) on rGO films followed by the spin casting of a poly(3-hexylthiophene) (P3HT) film. The data show that larger interfacial area in ZnO-NT/P3HT composites improves the exciton dissociation and the higher electrode conductance of rGO films helps the power output. This study offers an alternative to manufacturing nanostructure heterojunction solar cells at low temperatures using potentially low cost materials.

  9. Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO_2 seed layer

    International Nuclear Information System (INIS)

    Asib, N. A. M.; Afaah, A. N.; Aadila, A.; Khusaimi, Z.; Rusop, M.

    2016-01-01

    Titanium dioxide (TiO_2) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO_2 seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO_2 seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO_2 seed layer of 0.100 M. PL spectra of the TiO_2: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO_2 seed layer.

  10. MOVPE gallium-nitride nanostructures fabricated on ZnO nanorod templates grown from aqueous chemical solution

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    Fuendling, Soenke; Li Shunfeng; Postels, Bianca; Al-Suleiman, Mohamed; Wehmann, Hergo-Heinrich; Bakin, Andrey; Waag, Andreas, E-mail: s.fuendling@tu-bs.de [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, 38096 Braunschweig (Germany)

    2009-11-15

    Concerning optoelectronic devices fabricated by epitaxial methods, the combination of ZnO and GaN has promising aspects regarding their good optical properties and a relatively good lattice matching between both as compared to other foreign substrates like sapphire or silicon. Moreover ZnO nanopillar arrays may serve as a template for GaN nanopillar fabrication or for high quality GaN layers by lateral overgrowth of the ZnO nanopillars. In this work, we investigate the combination of two very different growth methods - aqueous chemical low temperature growth (ACG) for the ZnO nanopillar templates on silicon substrates and metalorganic vapor phase epitaxy (MOVPE) for the GaN overgrowth - in order to show to which extent the very cost efficient ZnO templates suit the high demands of GaN MOVPE. By a combination of annealing and photoluminescence experiments we show that the properties of the heterostructures change significantly with temperature.

  11. Structural and Morphological Properties of Nanostructured ZnO Particles Grown by Ultrasonic Spray Pyrolysis Method with Horizontal Furnace

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    G. Flores-Carrasco

    2014-01-01

    Full Text Available ZnO nanoparticles were synthesized in a horizontal furnace at 500°C using different zinc nitrate hexahydrate concentrations (0.01 and 0.1 M as reactive solution by ultrasonic spray pyrolysis method. The physical-chemical properties of synthesized ZnO nanoparticles have been characterized by thermogravimetric analysis (TGA, X-ray diffraction (XRD, scanning electron microscopy (SEM, energy dispersive spectroscopy (EDS, and high resolution transmission electron microscopy (HRTEM. With the TGA is has optimized the temperature at which the initial reactive (Zn(NO32·6H2O, is decomposed completely to give way to its corresponding oxide, ZnO. SEM revealed secondary particles with a quasispherical shape that do not change significantly with the increasing of precursor solution concentration as well as some content of the broken spheres. Increasing the precursor solution concentration leads to the increase in the average size of ZnO secondary particles from 248±73 to 470±160 nm; XRD reveals the similar tendency for the crystallite size which changes from 23±4 to 45±4 nm. HRTEM implies that the secondary particles are with hierarchical structure composed of primary nanosized subunits. These results showed that the precursor concentration plays an important role in the evolution on the size, stoichiometry, and morphology of ZnO nanoparticles.

  12. Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

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    Po-Sheng Hu

    2017-12-01

    Full Text Available In this research, the Zn(C5H7O22·xH2O-based growth of ZnO micro/nanostructures in a low temperature, vapor-trapped chemical vapor deposition system was attempted to optimize structural and optical properties for potential biomedical applications. By trapping in-flow gas molecules and Zinc vapor inside a chamber tube by partially obstructing a chamber outlet, a high pressure condition can be achieved, and this experimental setup has the advantages of ease of synthesis, being a low temperature process, and cost effectiveness. Empirically, the growth process proceeded under a chamber condition of an atmospheric pressure of 730 torr, a controlled volume flow rate of input gas, N2/O2, of 500/500 Standard Cubic Centimeters per Minute (SCCM, and a designated oven temperature of 500 °C. Specifically, the dependence of structural and optical properties of the structures on growth duration and spatially dependent temperature were investigated utilizing scanning electron microscopy, X-ray diffraction (XRD, photoluminescence (PL, and ultraviolet-visible transmission spectroscopy. The experimental results indicate that the grown thin film observed with hexagonal structures and higher structural uniformity enables more prominent structural and optical signatures. XRD spectra present the dominant peaks along crystal planes of (002 and (101 as the main direction of crystallization. In addition, while the structures excited with laser wavelength of 325 nm emit a signature radiation around 380 nm, an ultraviolet lamp with a wavelength of 254 nm revealed distinctive photoluminescence peaks at 363.96 nm and 403.52 nm, elucidating different degrees of structural correlation as functions of growth duration and the spatial gradient of temperature. Transmittance spectra of the structures illustrate typical variation in the wavelength range of 200 nm to 400 nm, and its structural correlation is less significant when compared with PL.

  13. Electrical and photocatalytic properties of boron-doped ZnO nanostructure grown on PET-ITO flexible substrates by hydrothermal method

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    Wang, Wei; Ai, Taotao; Yu, Qi

    2017-02-01

    Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth mechanism of pure ZnO nanorods and B-doped ZnO sheet-spheres was specifically investigated. The as-prepared BZO/PET-ITO heterojunction possessed obvious rectification properties and its positive turn-on voltage was 0.4 V. The carrier transport mechanisms involved three models such as hot carrier tunneling theory, tunneling recombination, and series-resistance effect were explored. The BZO/PET-ITO nanostructures were more effective than pure ZnO to degrade the RY 15, and the degradation rate reached 41.45%. The decomposition process with BZO nanostructure followed first-order reaction kinetics. The photocurrent and electrochemical impedance spectroscopy revealed that the B-doping could promote the separation of photo-generated electron-hole pairs, which was beneficial to enhance the photocatalytic activity. The photocurrent density of B-doped and pure ZnO/PET-ITO were 0.055 mA/cm2 and 0.016 mA/cm2, respectively. The photocatalytic mechanism of the sample was analyzed by the energy band theory.

  14. Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

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    Kumar, P. Suresh; Raj, A. Dhayal [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.co [Department of Nanoscience and Technology, Bharathiar University, Coimbatore-641046 (India); Nataraj, D. [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India)

    2010-10-01

    In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

  15. Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Kumar, P. Suresh; Raj, A. Dhayal; Mangalaraj, D.; Nataraj, D.

    2010-01-01

    In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

  16. Growth of novel ZnO nanostructures by soft chemical routes

    International Nuclear Information System (INIS)

    Saravana Kumar, R.; Sathyamoorthy, R.; Matheswaran, P.; Sudhagar, P.; Kang, Yong Soo

    2010-01-01

    Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

  17. Growth of novel ZnO nanostructures by soft chemical routes

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    Saravana Kumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.co [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sudhagar, P.; Kang, Yong Soo [Energy Materials Laboratory, WCU Program Department of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-09-10

    Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

  18. GaN and ZnO nanostructures

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    Fuendling, Soenke; Soekmen, Uensal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Braunschweig (Germany); Laehnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-10-15

    GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self-organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Random laser action in 3-D ZnO nanostructures

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    Miao, L.; Tanemura, S. [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, No. 2 Nengyuan Rd. Tianhe district, Guangzhou (China); Materials R and D Laboratory, Japan Fine Ceramics Centre, Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan); Yang, H.Y.; Lau, S.P. [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore); Xu, G. [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, No. 2 Nengyuan Rd. Tianhe district, Guangzhou (China)

    2009-05-15

    Room-temperature ultraviolet random lasing with low threshold pumping power was successfully achieved by ZnO 3-D random-wall nanostructure fabricated on ZnO/SiO{sub 2}/Si substrate through a thermal chemical reaction and vapor transportation deposition method in a simple horizontal tube furnace from the mixed ZnO and graphite powders. The nanorods grown along c-axis on the substrate are coalesced to form the 3-D nano-wall with 80{proportional_to}100 nm in wall thickness and irregular height ranging of 95-250 nm. Mueller matrix spectroscopic ellipsometry reveals that evaluated refractive indices n(E) of ZnO nanowalls are well interpreted by taking account of the ratio between ZnO and void achieved by effective medium theory analysis and isotropic depolarization feature of the designated nanowalls. Random lasing action observed in the wide wavelength range between 375 and 395 nm is realized by coherent amplification of the closed-loop scattered light inside 3-D random-wall nanostructure. It is demonstrated that both transverse electric (TE) and transverse magnetic (TM) modes show the same threshold and pumping power dependent trend, while the intensity of TM lasing is weaker than that of TE due to the different scattering strength originated from the features of the inside of nanowall. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Annealing Heat Treatment of ZnO Nanoparticles Grown on Porous Si Substrate Using Spin-Coating Method

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    K. A. Eswar

    2014-01-01

    Full Text Available ZnO nanoparticles were successfully deposited on porous silicon (PSi substrate using spin-coating method. In order to prepare PSi, electrochemical etching was employed to modify the Si surface. Zinc acetate dihydrate was used as a starting material in ZnO sol-gel solution preparation. The postannealing treatments were investigated on morphologies and photoluminescence (PL properties of the ZnO thin films. Field emission scanning electron microscopy (FESEM results indicate that the thin films composed by ZnO nanoparticles were distributed uniformly on PSi. The average sizes of ZnO nanoparticle increase with increasing annealing temperature. Atomic force microscopic (AFM analysis reveals that ZnO thin films annealed at 500°C had the smoothest surface. PL spectra show two peaks that completely correspond to nanostructured ZnO and PSi. These findings indicate that the ZnO nanostructures grown on PSi are promising for application as light emitting devices.

  1. Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

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    Ngom, B.D. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa)], E-mail: bdngom@tlabs.ac.za; Mpahane, T. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Manyala, N. [Department of Physics and Electronics National University of Lesotho (Lesotho); Nemraoui, O. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Buttner, U. [Engineering Department, University of Stellenbosch (South Africa); Kana, J.B. [Department of Physique University of Yaounde 1 (Cameroon); Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Maaza, M. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Beye, A.C. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal)

    2009-01-15

    Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm{sup -2}, respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.

  2. Surface morphology effects on the light-controlled wettability of ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Khranovskyy, V., E-mail: volkh@ifm.liu.se [Department of Physics, Chemistry and Biology (IFM), Linkoping University (Sweden); Ekblad, T.; Yakimova, R.; Hultman, L. [Department of Physics, Chemistry and Biology (IFM), Linkoping University (Sweden)

    2012-08-01

    ZnO nanostructures of diverse morphology with shapes of corrals and cabbages as well as open and filled hexagons and sheaves prepared by APMOCVD technique, are investigated with water contact angle (CA) analysis. The as-grown ZnO nanostructures exhibit pure hydrophobic behavior, which is enhanced with the increase of the nanostructure's surface area. The most hydrophobic structures (CA = 124 Degree-Sign ) were found to be the complex nanosheaf, containing both the macro-and nanoscale features. It is concluded that the nanoscale roughness contributes significantly to the hydrophobicity increase. The character of wettability was possible to switch from hydrophobic-to-superhydrophilic state upon ultra violet irradiation. Both the rate and amplitude of the contact angle depend on the characteristic size of nanostructure. The observed effect is explained due to the semiconductor properties of zinc oxide enhanced by increased surface chemistry effect in nanostructures.

  3. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  4. Synthesis of cadmium oxide doped ZnO nanostructures using electrochemical deposition

    International Nuclear Information System (INIS)

    Singh, Trilok; Pandya, D.K.; Singh, R.

    2011-01-01

    Research highlights: → Ternary ZnCdO alloy semiconductor nanostructures were grown using electrochemical deposition. → X-ray diffraction measurements showed that the nanostructures were of wurtzite structure and possessed a compressive stress along the c-axis direction. → The cut-off wavelength shifted from blue to red on account of the Cd incorporation in the ZnO and the average transmittance decreased by ∼31%. → The bandgap tuning for 4-16 at% Cd in the initial solution was achieved in the range of 3.08-3.32 eV (up to 0.24 eV). - Abstract: Ternary ZnCdO alloy semiconductor nanostructures were grown using electrochemical deposition. Crystalline nanostructures/nanorods with cadmium concentration ranging from 4 to 16 at% in the initial solution were electrodeposited on tin doped indium oxide (ITO) conducting glass substrates at a constant cathodic potential -0.9 V and subsequently annealed in air at 300 deg. C. X-ray diffraction measurements showed that the nanostructures were of wurtzite structure and possessed a compressive stress along the c-axis direction. The elemental composition of nanostructures was confirmed by energy dispersive spectroscopy (EDS). ZnO nanostructures were found to be highly transparent and had an average transmittance of 85% in the visible range of the spectrum. After the incorporation of Cd content into ZnO the average transmittance decreased and the bandgap tuning was also achieved.

  5. On quantum efficiency of photoluminescence in ZnO layers and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

    2009-12-15

    In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

  6. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sallet, Vincent; Falyouni, Farid; Marzouki, Ali; Haneche, Nadia; Sartel, Corinne; Lusson, Alain; Galtier, Pierre [Groupe d' Etude de la Matiere Condensee (GEMAC), CNRS-Universite de Versailles St-Quentin, Meudon (France); Agouram, Said [SCSIE, Universitat de Valencia, Burjassot (Spain); Enouz-Vedrenne, Shaima [Thales Research and Technology France, Palaiseau (France); Munoz-Sanjose, Vicente [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, Burjassot (Spain)

    2010-07-15

    Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. Anodized ZnO nanostructures for photoelectrochemical water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2016-01-01

    Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

  8. Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology

    DEFF Research Database (Denmark)

    Kumar, Rajendra; McGlynn, E.; Biswas, M.

    2008-01-01

    ZnO nanostructures were grown on Au-catalyzed Si silicon substrates using vapor phase transport at growth temperatures from 800 to 1150 degrees C. The sample location ensured a low Zn vapor supersaturation during growth. Nanostructures grown at 800 and 850 degrees C showed a faceted rodlike...... growth tended to dominate resulting in the formation of a porous, nanostructured morphology. In all cases growth was seen only on the Au-coated region. Our results show that the majority of the nanostructures grow via a vapor-solid mechanism at low growth temperatures with no evidence of Au nanoparticles...

  9. ZnO nanocoral reef grown on porous silicon substrates without catalyst

    International Nuclear Information System (INIS)

    Abdulgafour, H.I.; Yam, F.K.; Hassan, Z.; AL-Heuseen, K.; Jawad, M.J.

    2011-01-01

    Research highlights: → Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates. → Flower-like aligned ZnO nanorods are fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. → The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency. → This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices. - Abstract: Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 μm and from 217-229 nm to 0.6-0.7 μm, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.

  10. ZnO nanocoral reef grown on porous silicon substrates without catalyst

    Energy Technology Data Exchange (ETDEWEB)

    Abdulgafour, H.I., E-mail: hind_alshaikh@yahoo.com [School of Physics, University Sains Malaysia 11800 Penang (Malaysia); Yam, F.K.; Hassan, Z.; AL-Heuseen, K.; Jawad, M.J. [School of Physics, University Sains Malaysia 11800 Penang (Malaysia)

    2011-05-05

    Research highlights: > Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates. > Flower-like aligned ZnO nanorods are fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. > The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency. > This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices. - Abstract: Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 {mu}m and from 217-229 nm to 0.6-0.7 {mu}m, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.

  11. Effect of indium dopant on surface and mechanical characteristics of ZnO : In nanostructured films

    Energy Technology Data Exchange (ETDEWEB)

    Fang, T.-H.; Kang, S.-H. [Institute of Mechanical and Electromechanical Engineering, National Formosa University, No 64, Wenhua Rd., Huwei, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net

    2008-12-21

    Epitaxial ZnO : In nanorod films were grown on SiO{sub 2} substrates using a chemical solution method with a pre-coated ZnO sputtered seed layer. Structural and surface characterizations of the ZnO : In nanostructured films were achieved by means of x-ray diffraction, a scanning electron microscope, an atomic force microscope and contact angle measurements. The hardness and Young's modulus of the nanostructured films were investigated by nanoindentation measurements. The results showed that when the indium dopant was increased, the hardness and Young's modulus of the films also rose. The films exhibited hydrophobic behaviour with contact angles of about 128-138 deg., and a decrease in the hardness and Young's modulus with decreasing loads or indentation depths. Buckling behaviour took place during the indentation process, and the fracture strength of the films was also discussed.

  12. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    Science.gov (United States)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

  13. Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, J., E-mail: joana.catarina@ua.pt [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cerqueira, A.F.R.; Sousa, M.G.; Santos, N.F. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Pimentel, A.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Cunha, A.F. da; Monteiro, T.; Costa, F.M. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2016-07-01

    Zinc oxide (ZnO) is a widely studied wide band gap semiconductor with applications in several fields, namely to enhance solar cells efficiency. Its ability to be grown in a wide variety of nanostructured morphologies, allowing the designing of the surface area architecture constitutes an important advantage over other semiconductors. Laser assisted flow deposition (LAFD) is a recently developed growth method, based on a vapour-solid mechanism, which proved to be a powerful approach in the production of ZnO micro/nanostructures with different morphologies as well as high crystallinity and optical quality. In the present work we report the use of the LAFD technique to grow functional ZnO nanostructures (nanoparticles and tetrapods) working as nano templates to improve the dye-sensitized solar cells (DSSCs) efficiency. The structural and morphological characterization of the as-grown ZnO crystals were performed by X-ray diffraction and electron microscopy, respectively, and the optical quality was assessed by photoluminescence spectroscopy. DSSCs were produced using a combination of these nanostructures, which were subsequently sensitized with N719 dye. An efficiency of ∼3% was achieved under simulated AM 1.5 illumination conditions for a dye loading time of 1 h. - Highlights: • Laser assisted flow deposition proved to be an efficient technique to produce high quality ZnO. • Active layer formed by an interconnected network of tetrapods and a small amount of nanoparticles. • Efficiency of ∼3% obtained under simulated AM 1.5 illumination conditions.

  14. Doping effect on the optical properties of ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Stoehr, M. [Frederick Seitz Materials Research Laboratory, University of Illinois,104 South Goodwin Avenue, Urbana, IL 61801 (United States); Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Juillaguet, S. [Groupe d' Etude des Semi-conducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Kyaw, T.M.; Wen, J.G. [Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France)

    2007-04-15

    High quality undoped and Ga{sub 2}O{sub 3} or In{sub 2}O{sub 3} doped ZnO nanostructures are grown by chemical vapor transport and condensation. The doping effect on the optical properties is investigated by photoluminescence. At room temperature, photoluminescence on Ga{sub 2}O{sub 3} doped ZnO nanostructures reveals an enhancement of the ultraviolet near band edge emission at 390 nm, while the intensity of the deep level emission at 530 nm weakens. At 5 K, an intense neutral-donor-bound exciton (D{sup 0}X) line dominates the undoped and doped ZnO photoluminescence spectra. The presence of well resolved two-electron satellite lines allow to determine the type of donors. At 5 K, the results indicate that ZnO nanostructures grown with 10% of Ga{sub 2}O{sub 3} display an excellent optical quality, proved by an intense D{sup 0}X line, a high intensity ratio between the D{sup 0}X line and the deep level emission as well as the presence of numerous phonon replicas of the main lines. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Structural and photovoltaic characteristics of hierarchical ZnO nanostructures electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, Muhammad, E-mail: saleem.malikape@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400044 (China); Fang, L. [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400044 (China); Shaukat, Saleem F.; Ahmad, M. Ashfaq [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Raza, Rizwan, E-mail: razahussaini786@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Akhtar, Majid Niaz; Jamil, Ayesha; Aslam, Samia [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Abbas, Ghazanfar [Department of Physics, COMSATS Institute of Information Technology, Islamabad 44000 (Pakistan)

    2015-04-15

    Highlights: • Hierarchically ZnO nanostructures electrodes were grown using hot plate magnetic stirring at different growth reaction temperature. • We have investigated the effect of working temperature of 160°, 170°, 180°, and 190° on the growth mechanism of nanospheres and on the power conversion efficiency of DSSCs. • ZnO nanospheres with perfect aggregation show superior power conversion efficiency of 1.24% which is about 83% higher than nanoparticles DSSC. • An obvious vogue is that the overall power conversion efficiency decreases as the degree of the spherical aggregation is gradually destroyed. - Abstract: Structural and photovoltaic characteristics of hierarchical ZnO nanostructures solar cell have been studied in relation to growth reaction temperature. It is found that the hierarchical ZnO nanostructures network to act not only as large surface area substrates but also as a transport medium for electrons injected from the dye molecules. The incident photon-to-current conversion efficiency is decreased by increasing the growth reaction temperature of ZnO electrodes. The best conversion efficiency of a 0.25 cm{sup 2} cell is measured to be 1.24% under 100 mW cm{sup −2} irradiation.

  16. Structural and photovoltaic characteristics of hierarchical ZnO nanostructures electrodes

    International Nuclear Information System (INIS)

    Saleem, Muhammad; Fang, L.; Shaukat, Saleem F.; Ahmad, M. Ashfaq; Raza, Rizwan; Akhtar, Majid Niaz; Jamil, Ayesha; Aslam, Samia; Abbas, Ghazanfar

    2015-01-01

    Highlights: • Hierarchically ZnO nanostructures electrodes were grown using hot plate magnetic stirring at different growth reaction temperature. • We have investigated the effect of working temperature of 160°, 170°, 180°, and 190° on the growth mechanism of nanospheres and on the power conversion efficiency of DSSCs. • ZnO nanospheres with perfect aggregation show superior power conversion efficiency of 1.24% which is about 83% higher than nanoparticles DSSC. • An obvious vogue is that the overall power conversion efficiency decreases as the degree of the spherical aggregation is gradually destroyed. - Abstract: Structural and photovoltaic characteristics of hierarchical ZnO nanostructures solar cell have been studied in relation to growth reaction temperature. It is found that the hierarchical ZnO nanostructures network to act not only as large surface area substrates but also as a transport medium for electrons injected from the dye molecules. The incident photon-to-current conversion efficiency is decreased by increasing the growth reaction temperature of ZnO electrodes. The best conversion efficiency of a 0.25 cm 2 cell is measured to be 1.24% under 100 mW cm −2 irradiation

  17. ZnO Nanostructures for Tissue Engineering Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2017-11-01

    Full Text Available This review focuses on the most recent applications of zinc oxide (ZnO nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair.

  18. Detectors based on Pd-doped and PdO-functionalized ZnO nanostructures

    Science.gov (United States)

    Postica, V.; Lupan, O.; Ababii, N.; Hoppe, M.; Adelung, R.; Chow, L.; Sontea, V.; Aschehoug, P.; Viana, V.; Pauporté, Th.

    2018-02-01

    In this work, zinc oxide (ZnO) nanostructured films were grown using a simple synthesis from chemical solutions (SCS) approach from aqueous baths at relatively low temperatures (room temperature (gas response of 2). Up to 200 °C operating temperature the samples are highly selective to H2 gas, with highest response of 12 at 150 °C. This study demonstrates that surface functionalization of n-ZnO nanostructured films with p-type oxides is very important for improvement of gas sensing properties.

  19. Piezoelectric ZnO nanostructure for energy harvesting

    CERN Document Server

    Leprince-Wang, Yamin

    2015-01-01

    Over the past decade, ZnO as an important II-VI semiconductor has attracted much attention within the scientific community over the world owing to its numerous unique and prosperous properties. This material, considered as a "future material", especially in nanostructural format, has aroused many interesting research works due to its large range of applications in electronics, photonics, acoustics, energy and sensing. The bio-compatibility, piezoelectricity & low cost fabrication make ZnO nanostructure a very promising material for energy harvesting.

  20. Optical function of bionic nanostructure of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Xu, C X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Zhu, G P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, Y J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore); Sun, X W [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Li, X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, J P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Cui, Y P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2007-10-15

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction.

  1. Optical function of bionic nanostructure of ZnO

    International Nuclear Information System (INIS)

    Xu, C X; Zhu, G P; Liu, Y J; Sun, X W; Li, X; Liu, J P; Cui, Y P

    2007-01-01

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction

  2. Oriented ZnO nanostructures and their application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Man, Minh Tan [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of); Kim, Ji-Hee [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Sungkyunkwan University (SKKU), Suwon, 16419 (Korea, Republic of); Jeong, Mun Seok [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 16419 (Korea, Republic of); Do, Anh-Thu Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Caugiay, Hanoi (Viet Nam); Lee, Hong Seok, E-mail: hslee1@jbnu.ac.kr [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of)

    2017-05-15

    We report a chemical bath deposition approach for the preparation of large arrays of oriented ZnO nanostructures by activated substrate processes, and precipitated ZnO nanorods by passive occupation of the crystal surface. Photoluminescence dynamics showed that various visible emission characteristics associated with defects such as oxygen vacancy, zinc interstitial or their complexes. In addition, the precipitated ZnO nanorods exhibited excellent performance in the adsorption and photocatalytic decomposition of organic dyes, achieving 95% photodegradation of Rhodamine 6B. Moreover, oxygen defects function as trap sites with strong adsorption abilities towards organic dyes and showed high performance in the photocatalytic degradation of the dye molecules.

  3. Nanostructured porous ZnO film with enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Wang Lina; Zheng Yingying; Li Xiaoyun; Dong Wenjun; Tang Weihua; Chen Benyong; Li Chaorong; Li Xiao; Zhang Tierui

    2011-01-01

    Well-defined ZnO nanostructured films have been fabricated directly on Zn foil via hydrothermal synthesis. During the fabrication of the ZnO nanostructured films, the Zn foil serves as the Zn source and also the substrate. Porous nanosheet-based, nanotube-based and nanoflower-based ZnO films can all be easily prepared by adjusting the alkali type, reaction time and reaction temperature. The composition, morphology and structure of ZnO films are characterized by X-ray diffraction, scanning electron microscope and high-resolution transmission electron microscope. The porous ZnO nanosheet-based film exhibits enhanced photocatalytic activity in the degradation of Rhodamine B under UV light irradiation. This can be attributed to the high surface area of the ZnO nanosheet and the large percentage of the exposed [001] facet. Moreover, the self-supporting, recyclable and stable ZnO photocatalytic film can be readily recovered and potentially applied for pollution disposal.

  4. Solution precursor plasma deposition of nanostructured ZnO coatings

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2011-01-01

    Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  5. Solution precursor plasma deposition of nanostructured ZnO coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

    2011-08-15

    Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  6. A Systematic Study of the Relationship among the Morphological, Structural and Photoelectrochemical Properties of ZnO Nanorods Grown Using the Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-08-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO seed layer/fluorine-doped tin oxide (FTO) substrate for different growth durations ranging from 5 to 40 min using the microwave chemical bath deposition method. We studied the effect of growth duration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this study, we found that the photoelectrochemical properties of the ZnO nanostructures were largely affected by their morphological and structural properties. As a result, we obtained the highest photocurrent density of 0.46 mA/cm{sup 2} (at 1.5 V vs. SCE) from the sample grown for 30 min.

  7. Laser nanostructuring of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  8. Studies of optical emission in the high intensity pumping regime of top-down ZnO nanostructures and thin films grown on c-sapphire substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Divay, L.; Kostcheev, S.; McMurtry, S.; Lerondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, ICD CNRS (FRE2848), Universite de Technologie de Troyes, Troyes (France); Rogers, D.J.; Teherani, F.H. [Nanovation SARL, Versailles, 91400 Orsay (France); Lusson, A. [GEMaC, CNRS - Universite de Versailles Saint-Quentin en Yvelines,Meudon (France)

    2008-07-01

    We report on the emission of Zinc Oxide (ZnO) thin films obtained by Pulsed Laser Deposition (PLD) under high intensity excitation. In order to clarify the origin of the emission bands, we compared results for high quality thin films (75 nm) before and after 'top-down' nanopatterning. A nanopattering technique was developed for this purpose. The technique combined Electron Beam Lithography (EBL) and lift-off techniques and Inductively Coupled Plasma Reactive Ion Etching (ICP RIE). The emission spectra of the two types of samples were found to have a difference in their fine structure that was attributed, in part, to the existence of guided emission in the thin films and exciton weak confinement effects in the nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Structural and optical properties of ZnO nanostructures electrochemically synthesized on AZO/Ag/AZO-multilayer-film-coated polyethersulfone substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; Yoo, Chanho; No, Youngsoo; Kim, Suyoun; Kim, Taewhan; Cho, Woonjo; Kim, Jinyoung

    2012-01-01

    ZnO nanostructures were formed on Al-doped ZnO (AZO)/Ag/AZO-multilayer-film-coated flexible polyethersulfone (PES) substrates at low temperature by using an electrochemical deposition method. The resistivity of the AZO/Ag/AZO multilayer films decreased with increasing thickness of the Ag film. X-ray diffraction patterns for the ZnO nanostructures showed that the crystal structure of the ZnO was hexagonal wurtzite and that the orientation was along the c-axis perpendicular to the substrate. Scanning electron microscopy images showed that the ZnO nanostructures grown at current densities of - 1.0 and - 1.5 mA/cm 2 were ZnO nanorods with diameters of 150 nm and ZnO nanoflowers with a planar dimension, respectively. Photoluminescence spectra showed that the band-edge emission peak of the ZnO nanostructures dominantly appeared in the ultraviolet region. These results showed that ZnO nanorods and nanoflowers with high quality were synthesized on AZO/Ag/AZO-multilayer-film-coated PES substrates.

  10. ZnO thin films and nanostructures for emerging optoelectronic applications

    Science.gov (United States)

    Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

    2010-02-01

    ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

  11. Hydrothermal temperature effect on crystal structures, optical properties and electrical conductivity of ZnO nanostructures

    Science.gov (United States)

    Dhafina, Wan Almaz; Salleh, Hasiah; Daud, Mohd Zalani; Ghazali, Mohd Sabri Mohd; Ghazali, Salmah Mohd

    2017-09-01

    ZnO is an wide direct band gap semiconductor and possess rich family of nanostructures which turned to be a key role in the nanotechnology field of applications. Hydrothermal method was proven to be simple, robust and low cost among the reported methods to synthesize ZnO nanostructures. In this work, the properties of ZnO nanostructures were altered by varying temperatures of hydrothermal process. The changes in term of morphological, crystal structures, optical properties and electrical conductivity were investigated. A drastic change of ZnO nanostructures morphology and decreases of 002 diffraction peak were observed as the hydrothermal temperature increased. The band gap of samples decreased as the size of ZnO nanostructure increased, whereas the electrical conductivity had no influence on the band gap value but more on the morphology of ZnO nanostructures instead.

  12. Nanostructured ZnO thin films by chemical bath deposition in basic aqueous ammonia solutions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Chu, J.B.; Huang, S.M.; Zhang, D.W.; Bian, Z.Q.; Li, X.D.; Sun, Z. [East China Normal University, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, Shanghai (China); Yin, X.J. [Singapore Polytechnic, Advanced Materials Technology Center, Singapore (Singapore)

    2009-06-15

    This paper presents further insights and observations of the chemical bath deposition (CBD) of ZnS thin films using an aqueous medium involving Zn-salt, ammonium sulfate, aqueous ammonia, and thiourea. Results on physical and chemical properties of the grown layers as a function of ammonia concentration are reported. Physical and chemical properties were analyzed using scanning electron microscopy (SEM), X-ray energy dispersive (EDX), and X-ray diffraction (XRD). Rapid growth of nanostructured ZnO films on fluorine-doped SnO{sub 2} (FTO) glass substrates was developed. ZnO films crystallized in a wurtzite hexagonal structure and with a very small quantity of Zn(OH){sub 2} and ZnS phases were obtained for the ammonia concentration ranging from 0.75 to 2.0 M. Flower-like and columnar nanostructured ZnO films were deposited in two ammonia concentration ranges, respectively: one between 0.75 and 1.0 M and the other between 1.4 and 2.0 M. ZnS films were formed with a high ammonia concentration of 3.0 M. The formation mechanisms of ZnO, Zn(OH){sub 2}, and ZnS phases were discussed in the CBD process. The developed technique can be used to directly and rapidly grow nanostructured ZnO film photoanodes. Annealed ZnO nanoflower and columnar nanoparticle films on FTO substrates were used as electrodes to fabricate the dye sensitized solar cells (DSSCs). The DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 0.84%, which is higher compared to that (0.45%) of the cell being constructed using a photoanode of columnar nanoparticle ZnO film. The results have demonstrated the potential applications of CBD nanostructured ZnO films for photovoltaic cells. (orig.)

  13. SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

    Science.gov (United States)

    Labis, Joselito P.; Alanazi, Anwar Q.; Albrithen, Hamad A.; El-Toni, Ahmed Mohamed; Hezam, Mahmoud; Elafifi, Hussein Elsayed; Abaza, Osama M.

    2017-09-01

    The parameters of pulsed laser deposition (PLD) have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO). In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ˜300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL), while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002) preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

  14. SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Joselito P. Labis

    2017-09-01

    Full Text Available The parameters of pulsed laser deposition (PLD have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO. In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ∼300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL, while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002 preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

  15. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  16. Morphological transition of ZnO nanostructures influenced by magnesium doping

    International Nuclear Information System (INIS)

    Premkumar, T.; Zhou, Y.S.; Gao, Y.; Baskar, K.; Jiang, L.; Lu, Y.F.

    2012-01-01

    Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E 2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.

  17. Synthesis of ZnO Nanostructures for Low Temperature CO and UV Sensing

    Directory of Open Access Journals (Sweden)

    Nazar Abbas Shah

    2012-10-01

    Full Text Available In this paper, synthesis and results of the low temperature sensing of carbon monoxide (CO gas and room temperature UV sensors using one dimensional (1-D ZnO nanostructures are presented. Comb-like structures, belts and rods, and needle-shaped nanobelts were synthesized by varying synthesis temperature using a vapor transport method. Needle-like ZnO nanobelts are unique as, according to our knowledge, there is no evidence of such morphology in previous literature. The structural, morphological and optical characterization was carried out using X-ray diffraction, scanning electron microscopy and diffused reflectance spectroscopy techniques. It was observed that the sensing response of comb-like structures for UV light was greater as compared to the other grown structures. Comb-like structure based gas sensors successfully detect CO at 75 °C while other structures did not show any response.

  18. Homogeneous ZnO nanostructure arrays on GaAs substrates by two-step chemical bath synthesis

    International Nuclear Information System (INIS)

    Huang, Chun-Yuan; Wu, Tzung-Han; Cheng, Chiao-Yang; Su, Yan-Kuin

    2012-01-01

    ZnO nanostructures, including nanowires, nanorods, and nanoneedles, have been deposited on GaAs substrates by the two-step chemical bath synthesis. It was demonstrated that the O 2 -plasma treatment of GaAs substrates prior to the sol–gel deposition of seed layers was essential to conformally grow the nanostructures instead of 2D ZnO bunches and grains on the seed layers. Via adjusting the growth time and concentration of precursors, nanostructures with different average diameter (26–225 nm), length (0.98–2.29 μm), and density (1.9–15.3 × 10 9 cm −2 ) can be obtained. To the best of our knowledge, this is the first demonstration of ZnO nanostructure arrays grown on GaAs substrates by the two-step chemical bath synthesis. As an anti-reflection layer on GaAs-based solar cells, the array of ZnO nanoneedles with an average diameter of 125 nm, a moderate length of 2.29 μm, and the distribution density of 9.8 × 10 9 cm −2 has increased the power conversion efficiency from 7.3 to 12.2 %, corresponding to a 67 % improvement.

  19. Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

    2016-11-01

    Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

  20. Hydrothermal growth and characterizations of dandelion-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, The Institute of Science, Madam Cama Road, Mumbai 400 032, (M.S.) (India); Lu, Shih-Yuan, E-mail: sylu@nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, ROC (China)

    2013-12-05

    Highlights: •The simple, low cost, environmental benign hydrothermal method has been used to synthesize ZnO nanostructure. •The SEM images reveal the interesting 3D dandelion-like morphology of synthesized ZnO nanostructure. The SAED pattern and HRTEM study confirms that the ZnO nanorods are single crystalline. •Change in experimental conditions dramatically changes the morphologies of the synthesized ZnO. •The room temperature PL study reveals strong band edge emission along with much weaker defect related blue emission. •The reaction and growth mechanism of ZnO nanostructure is also discussed. -- Abstract: Three dimensional (3D) ZnO nanostructures have been synthesized by using a facile low-cost hydrothermal method under mild conditions. Aqueous alkaline ammonia solution of Zn(CH{sub 3}COO){sub 2} is used to grow 3D ZnO nanostructures. The X-ray diffraction (XRD) study reveals the well crystallized hexagonal structure of ZnO. SEM observations depict that the ZnO product grows in the form of nanorods united together to form 3D dandelion-like nanostructures. The elemental analysis using EDAX technique confirms the stoichiometry of the ZnO nanorods. The product exhibits special optical properties with red-shifts in optical absorption peak (376 nm) as compared with those of conventional ZnO nanorods. PL spectra show emission peak (396 nm) at the near band-edge and peak (464 nm) originated from defects states that are produced during the hydrothermal growth. TEM and SAED results reveal single crystalline structure of the synthesized product. The reaction and growth mechanisms on the morphological evolution of the ZnO nanostructures are discussed. The morphology of ZnO product is investigated by varying the reaction time, temperature, and type of complexing reagent.

  1. Study of quantum confinement effects in ZnO nanostructures

    Science.gov (United States)

    Movlarooy, Tayebeh

    2018-03-01

    Motivation to fact that zinc oxide nanowires and nanotubes with successful synthesis and the mechanism of formation, stability and electronic properties have been investigated; in this study the structural, electronic properties and quantum confinement effects of zinc oxide nanotubes and nanowires with different diameters are discussed. The calculations within density functional theory and the pseudo potential approximation are done. The electronic structure and energy gap for Armchair and zigzag ZnO nanotubes with a diameter of about 4 to 55 Angstrom and ZnO nanowires with a diameter range of 4 to 23 Å is calculated. The results revealed that due to the quantum confinement effects, by reducing the diameter of nanowires and nanotubes, the energy gap increases. Zinc oxide semiconductor nanostructures since having direct band gap with size-dependent and quantum confinement effect are recommended as an appropriate candidate for making nanoscale optoelectronic devices.

  2. Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

    Science.gov (United States)

    He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

    2017-06-01

    In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

  3. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    International Nuclear Information System (INIS)

    Arya, Sunil K.; Saha, Shibu; Ramirez-Vick, Jaime E.; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P.

    2012-01-01

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: ► This review highlights various approaches to synthesize ZnO nanostructures and thin films. ► Article highlights the importance of ZnO nanostructures as biosensor matrix. ► Article highlights the advances in various biosensors based on ZnO nanostructures. ► Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review

  4. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    Energy Technology Data Exchange (ETDEWEB)

    Arya, Sunil K., E-mail: sunilarya333@gmail.com [Bioelectronics Program, Institute of Microelectronics, A-Star 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Ramirez-Vick, Jaime E. [Engineering Science and Materials Department, University of Puerto Rico, Mayaguez, PR 00681 (United States); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhansali, Shekhar [Department of Electrical and Computer Engineering, Florida International University, Miami, FL (United States); Singh, Surinder P., E-mail: singh.uprm@gmail.com [National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)

    2012-08-06

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: Black-Right-Pointing-Pointer This review highlights various approaches to synthesize ZnO nanostructures and thin films. Black-Right-Pointing-Pointer Article highlights the importance of ZnO nanostructures as biosensor matrix. Black-Right-Pointing-Pointer Article highlights the advances in various biosensors based on ZnO nanostructures. Black-Right-Pointing-Pointer Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO

  5. Structural properties and gas sensing behavior of sol-gel grown nanostructured zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rajyaguru, Bhargav; Gadani, Keval; Kansara, S. B.; Pandya, D. D.; Shah, N. A.; Solanki, P. S., E-mail: piyush.physics@gmail.com [Department of Physics, Saurashtra University, Rajkot – 360 005 (India); Rathod, K. N.; Solanki, Sapana [Department of Physics, Saurashtra University, Rajkot – 360 005 (India); V.V.P. Engineering College, Gujarat Technological University, Rajkot – 360 005 (India)

    2016-05-06

    In this communication, we report the results of the studies on structural properties and gas sensing behavior of nanostructured ZnO grown using acetone precursor based modified sol-gel technique. Final product of ZnO was sintered at different temperatures to vary the crystallite size while their structural properties have been studied using X-ray diffraction (XRD) measurement performed at room temperature. XRD results suggest the single phasic nature of all the samples and crystallite size increases from 11.53 to 20.96 nm with increase in sintering temperature. Gas sensing behavior has been studied for acetone gas which indicates that lower sintered samples are more capable to sense the acetone gas and related mechanism has been discussed in the light of crystallite size, crystal boundary density, defect mechanism and possible chemical reaction between gas traces and various oxygen species.

  6. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Kenanakis, G., E-mail: gkenanak@iesl.forth.gr [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Katsarakis, N. [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece)

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  7. Microwave-assisted Facile and Ultrafast Growth of ZnO Nanostructures and Proposition of Alternative Microwave-assisted Methods to Address Growth Stoppage

    Science.gov (United States)

    Rana, Abu Ul Hassan Sarwar; Kang, Mingi; Kim, Hyun-Seok

    2016-04-01

    The time constraint in the growth of ZnO nanostructures when using a hydrothermal method is of paramount importance in contemporary research, where a long fabrication time rots the very essence of the research on ZnO nanostructures. In this study, we present the facile and ultrafast growth of ZnO nanostructures in a domestic microwave oven within a pressurized environment in just a few minutes. This method is preferred for the conventional solution-based method because of the ultrafast supersaturation of zinc salts and the fabrication of high-quality nanostructures. The study of the effect of seed layer density, growth time, and the solution’s molar concentration on the morphology, alignment, density, and aspect ratio of ZnO nanorods (ZNRs) is explored. It is found in a microwave-assisted direct growth method that ~5 mins is the optimum time beyond which homogeneous nucleation supersedes heterogeneous nucleation, which results in the growth stoppage of ZNRs. To deal with this issue, we propound different methods such as microwave-assisted solution-replacement, preheating, and PEI-based growth methods, where growth stoppage is addressed and ZNRs with a high aspect ratio can be grown. Furthermore, high-quality ZnO nanoflowers and ZnO nanowalls are fabricated via ammonium hydroxide treatment in a very short time.

  8. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  9. Magnetic Properties of Gadolinium-Doped ZnO Films and Nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-08-29

    The magnetic properties of Gd-doped ZnO films and nanostructures are important to the development of next-generation spintronic devices. Here, we elucidate the significant role played by Gd-oxygen-deficiency defects in mediating/inducing ferromagnetic coupling in in situ Gd-doped ZnO thin films deposited at low oxygen pressure by pulsed laser deposition (PLD). Samples deposited at higher oxygen pressures exhibited diamagnetic responses. Vacuum annealing was used on these diamagnetic samples (grown at a relatively high oxygen pressures) to create oxygen- deficiency defects with the aim of demonstrating reproducibility of room-temperature ferromagnetism (RTFM). Samples annealed at oxygen environment exhibited super‐ paramagnetism and blocking-temperature effects. The samples possessed secondary phases; Gd segregation led to superparamagnetism. Theoretical studies showed a shift of the 4f level of Gd to the conduction band minimum (CBM) in Gd-doped ZnO nanowires, which led to an overlap with the Fermi level, resulting in strong exchange coupling and consequently RTFM.

  10. Point defects in ZnO crystals grown by various techniques

    International Nuclear Information System (INIS)

    Čížek, J; Vlček, M; Hruška, P; Lukáč, F; Melikhova, O; Anwand, W; Selim, F; Hugenschmidt, Ch; Egger, W

    2017-01-01

    In the present work point defects in ZnO crystals were characterized by positron lifetime spectroscopy combined with back-diffusion measurement of slow positrons. Defects in ZnO crystals grown by various techniques were compared. Hydrothermally grown ZnO crystals contain defects characterized by lifetime of ≈181 ps. These defects were attributed to Zn vacancies associated with hydrogen. ZnO crystals prepared by other techniques (Bridgman, pressurized melt growth, and seeded chemical vapour transport) exhibit shorter lifetime of ≈165 ps. Positron back-diffusion studies revealed that hydrothermally grown ZnO crystals contain higher density of defects than the crystals grown by other techniques. The lowest concentration of defects was detected in the crystal grown by seeded chemical vapor transport. (paper)

  11. Template-free sonochemical synthesis of flower-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Huawa [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); School of Science, Xi' an Polytechnic University, Xi' an 710048 (China); Fan, Huiqing, E-mail: hqfan3@163.com [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Wang, Xin [Shaanxi Province Thin Film Technology and Optical Test Open Key Laboratory, School of Photoelectrical Engineering, Xi' an Technological University, Xi' an 710032 (China); Wang, Jing [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Cheng, Pengfei; Zhang, Xiaojun [School of Science, Xi' an Polytechnic University, Xi' an 710048 (China)

    2014-10-03

    Flower-like ZnO nanostructures have been successfully synthesized via a facile and template-free sonochemical method, using zinc acetate and potassium hydroxide as reactants only. The as-synthesized flower-like ZnO nanostructures were composed of nanorods with the width of ∼300–400 nm and the length of ∼2–3 μm. The structures, morphologies and optical properties of the as-prepared products were characterized by X-ray diffraction, scanning electron microscope, transmission electron microscopy, UV-Vis spectrophotometry and Raman-scattering spectroscopy. A plausible formation mechanism of flower-like ZnO nanostructures was studied by SEM which monitors an intermediate morphology transformation of the product at the different ultrasonic time (t=80,90,95,105, and 120 min). - Highlights: • A facile and template-free sonochemical method to fabricate flower-like ZnO nanostructures was proposed. • The flower-like ZnO nanostructures follow the ingrowth of ZnO from the matrix of Zn(OH){sub 2} crystals. • The flower-like ZnO nanostructures are also expected to explore their application in the field of nano-electronic devices.

  12. Template-free sonochemical synthesis of flower-like ZnO nanostructures

    International Nuclear Information System (INIS)

    Yu, Huawa; Fan, Huiqing; Wang, Xin; Wang, Jing; Cheng, Pengfei; Zhang, Xiaojun

    2014-01-01

    Flower-like ZnO nanostructures have been successfully synthesized via a facile and template-free sonochemical method, using zinc acetate and potassium hydroxide as reactants only. The as-synthesized flower-like ZnO nanostructures were composed of nanorods with the width of ∼300–400 nm and the length of ∼2–3 μm. The structures, morphologies and optical properties of the as-prepared products were characterized by X-ray diffraction, scanning electron microscope, transmission electron microscopy, UV-Vis spectrophotometry and Raman-scattering spectroscopy. A plausible formation mechanism of flower-like ZnO nanostructures was studied by SEM which monitors an intermediate morphology transformation of the product at the different ultrasonic time (t=80,90,95,105, and 120 min). - Highlights: • A facile and template-free sonochemical method to fabricate flower-like ZnO nanostructures was proposed. • The flower-like ZnO nanostructures follow the ingrowth of ZnO from the matrix of Zn(OH) 2 crystals. • The flower-like ZnO nanostructures are also expected to explore their application in the field of nano-electronic devices

  13. Synthesis and characterization of ZnO nanostructures on noble-metal coated substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dikovska, A.Og. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia 1784 (Bulgaria); Atanasova, G.B. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia (Bulgaria); Avdeev, G.V. [Rostislaw Kaischew Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia (Bulgaria); Nedyalkov, N.N. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia 1784 (Bulgaria)

    2016-06-30

    Highlights: • ZnO nanostructures were fabricated on Au–Ag alloy coated silicon substrates by applying pulsed laser deposition. • Morphology of the ZnO nanostructures was related to the Au–Ag alloy content in the catalyst layer. • Increasing the Ag content in Au–Ag catalyst layer changes the morphology of the ZnO nanostructures from nanorods to nanobelts. - Abstract: In this work, ZnO nanostructures were fabricated on noble-metal (Au, Ag and Au–Ag alloys) coated silicon substrates by applying pulsed laser deposition. The samples were prepared at a substrate temperature of 550 °C, an oxygen pressure of 5 Pa, and a laser fluence of 2 J cm{sup −2} – process parameters usually used for deposition of smooth and dense thin films. The metal layer's role is substantial for the preparation of nanostructures. Heating of the substrate changed the morphology of the metal layer and, subsequently, nanoparticles were formed. The use of different metal particles resulted in different morphologies and properties of the ZnO nanostructures synthesized. The morphology of the ZnO nanostructures was related to the Au–Ag alloy's content of the catalyst layer. It was found that the morphology of the ZnO nanostructures evolved from nanorods to nanobelts as the ratio of Au/Ag in the alloy catalyst was varied. The use of a small quantity of Ag in the Au–Ag catalyst (Au{sub 3}Ag) layer resulted predominantly in the deposition of ZnO nanorods. A higher Ag content in the catalyst alloy (AuAg{sub 2}) layer resulted in the growth of a dense structure of ZnO nanobelts.

  14. The structural properties of flower-like ZnO nanostructures on porous silicon

    Science.gov (United States)

    Eswar, Kevin Alvin; Suhaimi, Mohd Husairi Fadzillah; Guliling, Muliyadi; Mohamad, Maryam; Khusaimi, Zuraida; Rusop, M.; Abdullah, Saifollah

    2018-05-01

    The flower-like zinc oxide (ZnO) were successfully synthesized on porous silicon (PSi) via hydrothermal method. The characteristic of ZnO nanostructures was investigated using field emission scanning microscopy (FESEM) and X-ray diffraction (X-Ray). The FESEM images show the flower-like ZnO nanostructures composed ZnO nanoparticles. The X-ray diffraction shows that strong intensity of (100), (002) and (101) peaks. The structural analysis revealed that the peaks angles were shifted due to the stress or imperfection of the crystalline of ZnO nanostructures. The crystalline sizes in range of 42.60 to 54.09 nm were produced.

  15. Shape-selective dependence of room temperature ferromagnetism induced by hierarchical ZnO nanostructures

    CSIR Research Space (South Africa)

    Motaung, DE

    2014-05-01

    Full Text Available . These materials were synthesized in a shape-selective manner using simple microwave assisted hydrothermal synthesis. Thermogravimetric analyses demonstrated the as-synthesized ZnO nanostructures to be stable and of high purity. Structural analyses showed...

  16. Photo-driven autonomous hydrogen generation system based on hierarchically shelled ZnO nanostructures

    International Nuclear Information System (INIS)

    Kim, Heejin; Yong, Kijung

    2013-01-01

    A quantum dot semiconductor sensitized hierarchically shelled one-dimensional ZnO nanostructure has been applied as a quasi-artificial leaf for hydrogen generation. The optimized ZnO nanostructure consists of one dimensional nanowire as a core and two-dimensional nanosheet on the nanowire surface. Furthermore, the quantum dot semiconductors deposited on the ZnO nanostructures provide visible light harvesting properties. To realize the artificial leaf, we applied the ZnO based nanostructure as a photoelectrode with non-wired Z-scheme system. The demonstrated un-assisted photoelectrochemical system showed the hydrogen generation properties under 1 sun condition irradiation. In addition, the quantum dot modified photoelectrode showed 2 mA/cm 2 current density at the un-assisted condition

  17. Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films

    Science.gov (United States)

    Cretı, A.; Valerini, D.; Taurino, A.; Quaranta, F.; Lomascolo, M.; Rella, R.

    2012-04-01

    The optical response by NO2 gas adsorption at different concentrations has been investigated, at room temperature, in ZnO nanostructured films grown by controlled vapor phase deposition. The variation (quenching) in the photoluminescence signal from excitonic and defects bands, due to the interactions between the oxidizing gas molecules and the sample surface, has been detected and dynamic responses and calibration curves as a function of gas concentration have been obtained and analyzed for each band. We showed that the sensing response results larger in excitonic band than in defect one and that the emission signal rises from two different quenchable and unquenchable states. A simple model was proposed in order to explain the quenching processes on the emission intensity and to correlate them to the morphological features of the samples. Finally, the reversibility of the quenching effects has also been tested at high gas concentration.

  18. Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application

    Directory of Open Access Journals (Sweden)

    Lili Yang

    2017-11-01

    Full Text Available Since the initial discovery of surface-enhanced Raman scattering (SERS in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0–3 dimensions. Finally, we present an overview of ZnO nanostructures for the versatile SERS application.

  19. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  20. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    International Nuclear Information System (INIS)

    Samadi, Morasae; Zirak, Mohammad; Naseri, Amene; Khorashadizade, Elham; Moshfegh, Alireza Z.

    2016-01-01

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  1. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Samadi, Morasae; Zirak, Mohammad [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Naseri, Amene [Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of); Khorashadizade, Elham [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Moshfegh, Alireza Z., E-mail: moshfegh@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of)

    2016-04-30

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  2. Light-emission from in-situ grown organic nanostructures

    DEFF Research Database (Denmark)

    Oliveira Hansen, Roana Melina de; Kjelstrup-Hansen, Jakob; Rubahn, Horst-Günter

    2011-01-01

    Organic crystalline nanofibers made from phenylene-based molecules exhibit a wide range of extraordinary optical properties such as intense, anisotropic and polarized luminescence that can be stimulated either optically or electrically, waveguiding and random lasing. For lighting and display...... of morphological characterization and demonstrate how appropriate biasing with an AC gate voltage enables electroluminescence from these in-situ grown organic nanostructures....

  3. Controllable synthesis of periodic flower-like ZnO nanostructures on Si subwavelength grating structures

    International Nuclear Information System (INIS)

    Ko, Yeong Hwan; Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    We report on the periodic well-defined flower-like zinc oxide (ZnO) nanostructures (NSs) self-assembled through a simple hydrothermal method using silicon (Si) subwavelength grating (SWG) structures. The Si SWGs serve as building blocks for constructing a two-dimensional (2D) periodic architecture to integrate the one-dimensional (1D) ZnO NSs. Various controlled morphologies of ZnO NSs with high crystallinity are obtained by changing the growth conditions. For 1D ZnO NSs integrated on periodic hexagonal Si SWG structures, the reflection characteristics are investigated in comparison with the conventional ZnO nanorod (NR) arrays. For a three-dimensional (3D) flower-like ZnO NS on Si SWGs, a relatively low total reflectance of < 8% at wavelengths of 300-1050 nm is achieved compared to the ZnO NRs on Si substrate.

  4. Three-dimensional ZnO hierarchical nanostructures: Solution phase synthesis and applications

    DEFF Research Database (Denmark)

    Wang, Xiaoliang; Ahmad, Mashkoor; Sun, Hongyu

    2017-01-01

    nanostructures in photocatalysis, field emission, electrochemical sensor, and lithium ion batteries. Throughout the discussion, the relationship between the device performance and the microstructures of 3D ZnO hierarchical nanostructures will be highlighted. This review concludes with a personal perspective...

  5. ZnO based nanowires grown by chemical vapour deposition for selective hydrogenation of acetylene alcohols

    NARCIS (Netherlands)

    Protasova, L.N.; Rebrov, E.; Choy, K.L.; Pung, S.Y.; Engels, V.; Cabaj, M.; Wheatley, A.E.H.; Schouten, J.C.

    2011-01-01

    Vertically aligned ZnO nanowires (NWs) with a length of 1.5–10 µm and a mean diameter of ca. 150 nm were grown by chemical vapour deposition onto a c-oriented ZnO seed layer which was deposited by atomic layer deposition on Si substrates. The substrates were then spin-coated with an ethanol solution

  6. Optimization of CVD parameters for long ZnO NWs grown on ITO

    Indian Academy of Sciences (India)

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

  7. Use of Nanostructured ZnO for Production of Antimicrobial Textiles

    International Nuclear Information System (INIS)

    Chit Ko Ko Htwe

    2011-12-01

    An awareness of general sanitation, contact disease transmission, and personal protection has led to the development of antimicrobial textiles. The development of antimicrobial fabrics using nanostructure ZnO has been investigated in this present work. The nanostructure ZnO were produced using a microwave irradiation without any other calcinations and were directly applied on to the fabric using pad-dry-cure method.Synthesized nanostructure ZnO were characterized by XRD and SEM for ZnO purification and particle size examination. The antibacterial activity of the finished fabrics was assessed qualitatively by agar diffusion method. The results show that the finished fabric demonstrated significant antibacterial activity against Staphylococcus aureus and Escherichia coli in qualitative test.

  8. From Bloch to random lasing in ZnO self-assembled nanostructures

    DEFF Research Database (Denmark)

    Garcia-Fernandez, Pedro David; Cefe, López

    2013-01-01

    In this paper, we present measurements on UV lasing in ZnO ordered and disordered nanostructures. Bloch lasing is achieved in the ordered structures by exploiting very low group-velocity Bloch modes in ZnO photonic crystals. In the second case, random lasing is observed in ZnO photonic glasses. We...... study the lasing threshold in both cases and its dependence on the structural parameters. Finally, we present the transition from Bloch to random lasing by deliberately doping a ZnO inverse photonic crystal with a controlled amount of lattice vacancies effectively converting it into a translationally...

  9. Effect of morphology on the non-ohmic conduction in ZnO nanostructures

    Science.gov (United States)

    Praveen, E.; Jayakumar, K.

    2016-05-01

    Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

  10. Effect of polar and non-polar surfaces of ZnO nanostructures on photocatalytic properties

    International Nuclear Information System (INIS)

    Yang Jinghai; Wang Jian; Li Xiuyan; Lang Jihui; Liu Fuzhu; Yang Lili; Zhai Hongju; Gao Ming; Zhao Xiaoting

    2012-01-01

    Highlights: ► Large-scale arrayed ZnO nanocrystals including ZnO hexagonal platforms and hamburger-like samples have been successfully fabricated by a simple hydrothermal method. ► ZnO with hexagonal platform-like morphology exhibited higher photocatalytic activity compared with that of the hamburger-like ZnO nanostructures. ► The theories of expose surfaces and oxygen vacancies were utilized to explain the photocatalytic mechanism. - Abstract: Large-scale arrayed ZnO nanocrystals with two different expose surfaces, including ZnO hexagonal nanoplatforms with the major expose plane of (0 0 0 1) and hamburger-like samples with the nonpolar planes of {101 ¯ 0} mainly exposed, were successfully fabricated by a simple hydrothermal method. Mechanisms for compare the photocatalytic activity of two typical ZnO nanostructures were systematic explained as the key point in the paper. Compared with the hamburger-like ZnO nanostructures, the ZnO with hexagonal platform-like morphology exhibited improved ability on the photocatalytic degradation of Rhodamine B (RhB) in aqueous solution under UV radiation. The relative higher photocatalytic activity of the ZnO hexagonal nanoplatforms was attributed to the exposed polar surfaces and the content of oxygen vacancy on the nanostructures surface. The Zn-terminated (0 0 0 1) polar face and the surface defects are facile to adsorb O 2− and OH − ions, resulting in a greater production rate of O 2 · − and OH· − , hence promoting the photocatalysis reaction.

  11. Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay

    International Nuclear Information System (INIS)

    Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo; Mohamed, Azman Seeni; Saifuddin, Siti Nazmin; Masudi, Sam’an Malik; Mohamad, Dasmawati

    2015-01-01

    ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shifted of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line

  12. Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay

    Energy Technology Data Exchange (ETDEWEB)

    Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo [Nano-optoelectronics Research and Technology Laboratory (NOR.), School of Physics, Universiti Sains Malaysia, 11800, USM, Pulau Pinang (Malaysia); Mohamed, Azman Seeni; Saifuddin, Siti Nazmin [Integrative Medicine Cluster, Advanced Medical and Dental Institute, Universiti Sains Malaysia, Bandar Putra Bertam, 13200 Kepala Batas, Pulau Pinang (Malaysia); Masudi, Sam’an Malik; Mohamad, Dasmawati [Craniofacial Science Laboratory, School of Dentistry, Health Campus, Universiti Sains Malaysia, 16150 Kubang Kerian, Kelantan (Malaysia)

    2015-04-24

    ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shifted of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line.

  13. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  14. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  15. Present and future applications of magnetic nanostructures grown by FEBID

    Energy Technology Data Exchange (ETDEWEB)

    Teresa, J.M. de [CSIC-Universidad de Zaragoza, Departamento de Fisica de la Materia Condensada, Instituto de Ciencia de Materiales de Aragon (ICMA), Saragossa (Spain); Universidad de Zaragoza, Laboratorio de Microscopias Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA), Saragossa (Spain); Fernandez-Pacheco, A. [University of Cambridge, TFM Group, Cavendish Laboratory, Cambridge (United Kingdom)

    2014-12-15

    Currently, magnetic nanostructures are routinely grown by focused electron beam induced deposition (FEBID). In the present article, we review the milestones produced in the topic in the past as well as the future applications of this technology. Regarding past milestones, we highlight the achievement of high-purity cobalt and iron deposits, the high lateral resolution obtained, the growth of 3D magnetic deposits, the exploration of magnetic alloys and the application of magnetic deposits for Hall sensing and in domain-wall conduit and magnetologic devices. With respect to future perspectives of the topic, we emphasize the potential role of magnetic nanostructures grown by FEBID for applications related to highly integrated 2D arrays, 3D nanowires devices, fabrication of advanced scanning-probe systems, basic studies of magnetic structures and their dynamics, small sensors (including biosensors) and new applications brought by magnetic alloys and even exchange biased systems. (orig.)

  16. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  17. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  18. ZnO nanostructure fabrication in different solvents transforms physio-chemical, biological and photodegradable properties

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Attarad; Ambreen, Sidra; Javed, Rabia; Tabassum, Saira [Department of Biotechnology, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Ul Haq, Ihsan [Department of Pharmacy, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Zia, Muhammad, E-mail: ziachaudhary@gmail.com [Department of Biotechnology, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

    2017-05-01

    Zinc oxide (ZnO) nanostructures are synthesized in various organic solvents (acetone, chloroform, ethyl acetate, ethanol and methanol) and water via coprecipitation process using zinc acetate as precursor. The resultant ZnO nanoparticles, nano rods and nano sheets are characterized by UV–vis spectrophotometric analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transmission infrared spectroscopy (FTIR), and energy dispersive X-ray spectroscopy (EDX). The variable size and geometry of nanoparticles depend upon medium used for synthesis. The synthesized ZnO nanostructures exhibit minor to moderate antioxidative (DPPH based free radical scavenging activity, total antioxidative potential and total reducing power) response. Mild to moderate antibacterial and antifungal activities, excellent antileishmanial potential (IC50 up to 3.76), and good cytotoxic perspective (LD50 up to 49.4) is also observed by the synthesized ZnO NPs. The nanoparticles also exhibit moderate α-amylase inhibition response. Furthermore the nanostructures are evaluated for methylene blue photodegradation response within 60 min time period. It is found that organic solvent alters shape, size and other physio-chemical properties of ZnO that ultimately modulate the biological, chemical, and environmental properties. - Highlights: • Zinc oxide nanoparticles are fabricated in different solvents using co-precipitation method • SEM, XRD and FTIR analysis confirms variation in physical and chemical characteristics of synthesized ZnO NPs • The synthesized ZnO demonstrates variation in biological, phytochemical and photodegradable properties.

  19. ZnO nanostructure fabrication in different solvents transforms physio-chemical, biological and photodegradable properties

    International Nuclear Information System (INIS)

    Ali, Attarad; Ambreen, Sidra; Javed, Rabia; Tabassum, Saira; Ul Haq, Ihsan; Zia, Muhammad

    2017-01-01

    Zinc oxide (ZnO) nanostructures are synthesized in various organic solvents (acetone, chloroform, ethyl acetate, ethanol and methanol) and water via coprecipitation process using zinc acetate as precursor. The resultant ZnO nanoparticles, nano rods and nano sheets are characterized by UV–vis spectrophotometric analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transmission infrared spectroscopy (FTIR), and energy dispersive X-ray spectroscopy (EDX). The variable size and geometry of nanoparticles depend upon medium used for synthesis. The synthesized ZnO nanostructures exhibit minor to moderate antioxidative (DPPH based free radical scavenging activity, total antioxidative potential and total reducing power) response. Mild to moderate antibacterial and antifungal activities, excellent antileishmanial potential (IC50 up to 3.76), and good cytotoxic perspective (LD50 up to 49.4) is also observed by the synthesized ZnO NPs. The nanoparticles also exhibit moderate α-amylase inhibition response. Furthermore the nanostructures are evaluated for methylene blue photodegradation response within 60 min time period. It is found that organic solvent alters shape, size and other physio-chemical properties of ZnO that ultimately modulate the biological, chemical, and environmental properties. - Highlights: • Zinc oxide nanoparticles are fabricated in different solvents using co-precipitation method • SEM, XRD and FTIR analysis confirms variation in physical and chemical characteristics of synthesized ZnO NPs • The synthesized ZnO demonstrates variation in biological, phytochemical and photodegradable properties.

  20. Three-Dimensional ZnO Hierarchical Nanostructures: Solution Phase Synthesis and Applications

    Directory of Open Access Journals (Sweden)

    Xiaoliang Wang

    2017-11-01

    Full Text Available Zinc oxide (ZnO nanostructures have been studied extensively in the past 20 years due to their novel electronic, photonic, mechanical and electrochemical properties. Recently, more attention has been paid to assemble nanoscale building blocks into three-dimensional (3D complex hierarchical structures, which not only inherit the excellent properties of the single building blocks but also provide potential applications in the bottom-up fabrication of functional devices. This review article focuses on 3D ZnO hierarchical nanostructures, and summarizes major advances in the solution phase synthesis, applications in environment, and electrical/electrochemical devices. We present the principles and growth mechanisms of ZnO nanostructures via different solution methods, with an emphasis on rational control of the morphology and assembly. We then discuss the applications of 3D ZnO hierarchical nanostructures in photocatalysis, field emission, electrochemical sensor, and lithium ion batteries. Throughout the discussion, the relationship between the device performance and the microstructures of 3D ZnO hierarchical nanostructures will be highlighted. This review concludes with a personal perspective on the current challenges and future research.

  1. Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Iwan, S., E-mail: iwan-sugihartono@unj.ac.id [Jurusan Fisika, FMIPA-UNJ, Rawamangun, Jakarta (Indonesia); Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Fauzia, Vivi [Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Umar, A. A. [Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, UKM Bangi, Selangor (Malaysia); Sun, X. W. [School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue (Singapore)

    2016-04-19

    Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffraction peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.

  2. Growth of hybrid carbon nanostructures on iron-decorated ZnO nanorods

    Science.gov (United States)

    Mbuyisa, Puleng N.; Rigoni, Federica; Sangaletti, Luigi; Ponzoni, Stefano; Pagliara, Stefania; Goldoni, Andrea; Ndwandwe, Muzi; Cepek, Cinzia

    2016-04-01

    A novel carbon-based nanostructured material, which includes carbon nanotubes (CNTs), porous carbon, nanostructured ZnO and Fe nanoparticles, has been synthetized using catalytic chemical vapour deposition (CVD) of acetylene on vertically aligned ZnO nanorods (NRs). The deposition of Fe before the CVD process induces the presence of dense CNTs in addition to the variety of nanostructures already observed on the process done on the bare NRs, which range from amorphous graphitic carbon up to nanostructured dendritic carbon films, where the NRs are partially or completely etched. The combination of scanning electron microscopy and in situ photoemission spectroscopy indicate that Fe enhances the ZnO etching, and that the CNT synthesis is favoured by the reduced Fe mobility due to the strong interaction between Fe and the NRs, and to the presence of many defects, formed during the CVD process. Our results demonstrate that the resulting new hybrid shows a higher sensitivity to ammonia gas at ambient conditions (∼60 ppb) than the carbon nanostructures obtained without the aid of Fe, the bare ZnO NRs, or other one-dimensional carbon nanostructures, making this system of potential interest for environmental ammonia monitoring. Finally, in view of the possible application in nanoscale optoelectronics, the photoexcited carrier behaviour in these hybrid systems has been characterized by time-resolved reflectivity measurements.

  3. Structural, optical and photocatalytic properties of flower-like ZnO nanostructures prepared by a facile wet chemical method

    Directory of Open Access Journals (Sweden)

    Sini Kuriakose

    2013-11-01

    Full Text Available Flower-like ZnO nanostructures were synthesized by a facile wet chemical method. Structural, optical and photocatalytic properties of these nanostructures have been studied by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, photoluminescence (PL and UV–vis absorption spectroscopy. SEM and TEM studies revealed flower-like structures consisting of nanosheets, formed due to oriented attachment of ZnO nanoparticles. Flower-like ZnO structures showed enhanced photocatalytic activity towards sun-light driven photodegradation of methylene blue dye (MB as compared to ZnO nanoparticles. XRD, UV–vis absorption, PL, FTIR and TEM studies revealed the formation of Zn(OH2 surface layer on ZnO nanostructures upon ageing. We demonstrate that the formation of a passivating Zn(OH2 surface layer on the ZnO nanostructures upon ageing deteriorates their efficiency to photocatalytically degrade of MB.

  4. Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

    Directory of Open Access Journals (Sweden)

    Zhimin GUO

    2016-02-01

    Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

  5. Optical and magneto-optical properties of zinc-oxide nanostructures grown by the low-temperature chemical route

    Science.gov (United States)

    Willander, M.; Alnoor, H.; Savoyant, A.; Adam, Rania E.; Nur, O.

    2018-02-01

    We demonstrate that the low temperature synthesis chemical route can be utilized to control the functionality of zinc oxide (ZnO) nanoparticles (NPs) and nanorods (NRs) for optical and magneto-optical performance. Different structural, optical, electro- and magneto-optical results will be displayed and analyzed. In the first part, we show how high quality ZnO NPs can be efficient for photodegradation using ultra-violet radiation. In the second part we will present our recent results on the control of the core defects in cobalt doped ZnO NR. Here and by using electron paramagnetic resonance (EPR) measurements, the substitution of Co2+ ions in the ZnO NRs crystal is shown. The relation between the incorporation and core defects concentration will be discussed. The findings give access to the magnetic anisotropy of ZnO NRs grown by the low temperature chemical route and can lead to demonstrate room temperature ferromagnetism in nanostructures with potential for different device applications.

  6. Electrochemical synthesis and characterization of hierarchically branched ZnO nanostructures on ensembles of gold nanowires

    International Nuclear Information System (INIS)

    Ongaro, Michael; Gambirasi, Arianna; Favaro, Monica; Ugo, Paolo

    2012-01-01

    Highlights: ► ZnO branched nanofibres for photoelectrochemical applications. ► Branched nanostructures are obtained by electrochemical deposition of ZnO on gold template nanowires. ► Branched nanowires crystallographic phase determined by electron back scatter diffraction. ► Branched structures display improved performances for the photoelectrochemical oxidation of water. - Abstract: This study presents an electrosynthetic methodology to obtain hierarchically structured ZnO electrodes with improved surface area, by exploiting gold nanowires ensembles (3D-NEEs) as the growing substrate. By this way, semiconductor electrodes organized in the shape of fir-like branches are obtained. Branched nanofibres are characterized by electron microscopy and electron backscatter diffraction (EBSD), the latter technique allowing the determination of the crystalline habit of individual nanostructures. The hierarchical branched nanowires show enhanced performances with respect to water photooxidation in comparison with already known nanostructured materials such as 1D-ZnO nanowires.

  7. A Review on the Fabrication of Hierarchical ZnO Nanostructures for Photocatalysis Application

    Directory of Open Access Journals (Sweden)

    Yi Xia

    2016-11-01

    Full Text Available Semiconductor photocatalysis provides potential solutions for many energy and environmental-related issues. Recently, various semiconductors with hierarchical nanostructures have been fabricated to achieve efficient photocatalysts owing to their multiple advantages, such as high surface area, porous structures, as well as enhanced light harvesting. ZnO has been widely investigated and considered as the most promising alternative photocatalyst to TiO2. Herein, we present a review on the fabrication methods, growth mechanisms and photocatalytic applications of hierarchical ZnO nanostructures. Various synthetic strategies and growth mechanisms, including multistep sequential growth routes, template-based synthesis, template-free self-organization and precursor or self-templating strategies, are highlighted. In addition, the fabrication of multicomponent ZnO-based nanocomposites with hierarchical structures is also included. Finally, the application of hierarchical ZnO nanostructures and nanocomposites in typical photocatalytic reactions, such as pollutant degradation and H2 evolution, is reviewed.

  8. A Novel Sensor for VOCs Using Nanostructured ZnO and MEMS Technologies

    Directory of Open Access Journals (Sweden)

    H. J. Pandya

    2012-03-01

    Full Text Available A sensor for detection of vapors of volatile organic compounds (VOCs incorporating nanostructured zinc oxide film and silicon micromachining is reported. One of the key features of the sensor is the use of nanostructured ZnO material which has been synthesized using a novel low cost process. Considerable reduction in the operating temperature of the sensor has been achieved due to the use of nanostructured ZnO material as compared to a sensor having ZnO thin film as the sensing layer. The sensor is formed on a micromachined silicon platform thereby reducing the heat loss. This resulted in reduction in power consumption. The sensor has been tested for a variety of VOCs such as: ethanol, iso-propyl alcohol and acetone. The maximum sensitivity of sensor was observed for ethanol vapors.

  9. Synthesis and characterization of flowerlike ZnO nanostructures via an ethylenediamine-meditated solution route

    International Nuclear Information System (INIS)

    Gao Xiangdong; Li Xiaomin; Yu Weidong

    2005-01-01

    Flowerlike ZnO nanostructures were deposited on Si substrate by choosing hexamethylenetetramine as the nucleation control reagent and ethylenediamine as the chelating and capping reagent. Structural and optical measurements reveal that obtained ZnO exhibits well-defined flowerlike morphology, hexagonal wurtzite structure, uniform distribution on substrate, and strong photoluminescence in ultraviolet band. The well-arrayed pedals of each ZnO flower possess the typical tapering feature, and are built up by many well-aligned ZnO nanorods. Moreover, each single nanorod building up the pedal exhibits the single crystal nature and the growth direction along c-axis. Effects of the precursor composition on the morphology of ZnO were discussed

  10. A flexible UV nanosensor based on reduced graphene oxide decorated ZnO nanostructures

    Science.gov (United States)

    Wang, Zhenxing; Zhan, Xueying; Wang, Yajun; Muhammad, Safdar; Huang, Ying; He, Jun

    2012-03-01

    A low-cost, compatible with flexible electronics, high performance UV sensor has been achieved from a reduced graphene oxide (RGO) decorated hydrangea-like ZnO film on a PDMS substrate. The hydrangea-like ZnO UV sensor has the best UV sensing performance among devices made of three kinds of ZnO nanostructures synthesized by a hydrothermal method, and demonstrated a dramatic enhancement in on/off ratio and photoresponse current by introducing an appropriate weight ratio of RGO. The on/off ratio of the 0.05% RGO/ZnO sensor increases almost one order of magnitude compared to that of a pristine hydrangea-like ZnO UV sensor. While for the 5% RGO decorated ZnO sensor, the photoresponse current reaches as high as ~1 μA and exceeds 700 times that of a ZnO UV sensor. These results indicate that RGO is an appropriate material to enhance the performance of ZnO nanostructure UV sensors based on its unique features, especially the high optical transparency and excellent electronic conductivity. Our findings will make RGO/ZnO nanohybrids extraordinarily promising in optoelectronics, flexible electronics and sensor applications.

  11. Influence of aspect ratio and surface defect density on hydrothermally grown ZnO nanorods towards amperometric glucose biosensing applications

    Science.gov (United States)

    Shukla, Mayoorika; Pramila; Dixit, Tejendra; Prakash, Rajiv; Palani, I. A.; Singh, Vipul

    2017-11-01

    In this work, hydrothermally grown ZnO Nanorods Array (ZNA) has been synthesized over Platinum (Pt) coated glass substrate, for biosensing applications. In-situ addition of strong oxidizing agent viz KMnO4 during hydrothermal growth was found to have profound effect on the physical properties of ZNA. Glucose oxidase (GOx) was later immobilized over ZNA by means of physical adsorption process. Further influence of varying aspect ratio, enzyme loading and surface defects on amperometric glucose biosensor has been analyzed. Significant variation in biosensor performance was observed by varying the amount of KMnO4 addition during the growth. Moreover, investigations revealed that the suppression of surface defects and aspect ratio variation of the ZNA played key role towards the observed improvement in the biosensor performance, thereby significantly affecting the sensitivity and response time of the fabricated biosensor. Among different biosensors fabricated having varied aspect ratio and surface defect density of ZNA, the best electrode resulted into sensitivity and response time to be 18.7 mA cm-2 M-1 and <5 s respectively. The observed results revealed that apart from high aspect ratio nanostructures and the extent of enzyme loading, surface defect density also hold a key towards ZnO nanostructures based bio-sensing applications.

  12. Luminescence properties of ZnO layers grown on Si-on-insulator substrates

    International Nuclear Information System (INIS)

    Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S.

    2006-01-01

    The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E 2 high optical phonon mode near 438 cm -1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems

  13. Control of chemical bonding of the ZnO surface grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ogata, K.; Komuro, T.; Hama, K.; Koike, K.; Sasa, S.; Inoue, M.; Yano, M.

    2004-01-01

    Toward the fabrication of enzyme modified field effect transistors (EnFETs) as one of organic/inorganic hybridized structures, surface bonding of the ZnO grown by molecular beam epitaxy was controlled by ex situ treatments. Angle resolved X-ray photoelectron spectroscopy (XPS) measurement revealed that O-H bonds exist at the surface of ZnO. It was found that the number of O-H bond could be changed with reversibility using plasma and thermal treatments

  14. Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates

    International Nuclear Information System (INIS)

    Zhou, H L; Chua, S J; Chow, S Y; Pan, H; Zhu, Y W; Feng, Y P; Wang, L S; Zang, K Y; Liu, W; Tripathy, S

    2007-01-01

    Using transmission electron microscopy (TEM), the authors have investigated the behavior of threading dislocations in ZnO selectively grown on a facet-controlled epitaxial overgrown GaN template. In this case, the ZnO is grown by a vapor transport method. The TEM study in the overgrown regions shows that all the pure-edge type dislocations in ZnO are parallel toward the mask area and vertical propagation of dislocation to the ZnO surface is minimized. Using such a selective growth technique on a faceted semi-polar GaN surface, a reduction of threading dislocation density in ZnO could be achieved

  15. Piezoelectric nanogenerators based on ZnO and M13 Bacteriophage nanostructures (Conference Presentation)

    Science.gov (United States)

    Shin, Dong-Myeong; Kim, Kyujungg; Hong, Suck Won; Oh, Jin-Woo; Kim, Hyung Kook; Hwang, Yoon-Hwae

    2016-09-01

    Recently, the portable and wearable electronic devices, operated in the power range of microwatt to miliwatt, become available thank to the nanotechnology development and become an essential element for a comfortable life. Our recent research interest mainly focuses on the fabrication of piezoelectric nanogenerators based on smart nanomaterials such as zinc oxide novel nanostructure, M13 bacteriophage. In this talk, we present a simple strategy for fabricating the freestanding ZnO nanorods/graphene/ZnO nanorods double sided heterostructures. The characterization of the double sided heterostructures by using SEM, and Raman scattering spectroscopy reveals the key process and working mechanism of a formation of the heterostructure. The mechanism is discussed in detail in term of the decomposed seed layer and the vacancy defect of graphene. The approach consists of a facile one-step fabrication process and could achieve ZnO coverage with a higher number density than that of the epitaxial single heterostructure. The resulting improvement in the number density of nanorods has a direct beneficial effect on the double side heterostructured nanogenerator performance. The total output voltage and current density are improved up to 2 times compared to those of a single heterostructure due to the coupling of the piezoelectric effects from both upward and downward grown nanorods. The facile one-step fabrication process suggests that double sided heterostructures would improve the performance of electrical and optoelectrical device, such as touch pad, pressure sensor, biosensor and dye-sensitized solar cells. Further, ioinspired nanogenerators based on vertically aligned phage nanopillars are inceptively demonstrated. Vertically aligned phage nanopillars enable not only a high piezoelectric response but also a tuneable piezoelectricity. Piezoelectricity is also modulated by tuning of the protein's dipoles in each phage. The sufficient electrical power from phage nanopillars thus

  16. VLS-grown diffusion doped ZnO nanowires and their luminescence properties

    International Nuclear Information System (INIS)

    Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

    2015-01-01

    Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

  17. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  18. Observation of Zn vacancies in ZnO grown by chemical vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Tuomisto, F.; Saarinen, K. [Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 TKK (Finland); Grasza, K.; Mycielski, A. [Institute of Physics, Polish Academy of Sciences, Lotnikow 32/46, 02-668 Warsaw (Poland)

    2006-03-15

    We have used positron annihilation spectroscopy to study the vacancy defects in ZnO crystals grown by both the conventional and contactless chemical vapor transport (CVT and CCVT). Our results show that Zn vacancies or Zn vacancy related defects are present in as-grown ZnO, irrespective of the growth method. Zn vacancies are observed in CVT-grown undoped ZnO and (Zn,Mn)O. The Zn vacancies present in undoped CCVT-ZnO are the dominant negatively charged point defect in the material. Doping the material with As introduces also Zn vacancy-related defect complexes with larger open volume. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Photoelectrocatalytic activity of a hydrothermally grown branched Zno nanorod-array electrode for paracetamol degradation.

    Science.gov (United States)

    Lin, Chin Jung; Liao, Shu-Jun; Kao, Li-Cheng; Liou, Sofia Ya Hsuan

    2015-06-30

    Hierarchical branched ZnO nanorod (B-ZnR) arrays as an electrode for efficient photoelectrocatalytic degradation of paracetamol were grown on fluorine-doped tin oxide substrates using a solution route. The morphologic and structural studies show the ZnO trunks are single-crystalline hexagonal wurtzite ZnO with a [0001] growth direction and are densely covered by c-axis-oriented ZnO branches. The obvious enhancement in photocurrent response of the B-ZnR electrode was obtained than that in the ZnO nanoparticle (ZnO NP) electrode. For the photoelectrocatalytic degradation of paracetamol in 20 h, the conversion fraction of the drug increased from 32% over ZnO NP electrode to 62% over B-ZnR arrays with about 3-fold increase in initial reaction rate. The light intensity-dependent photoelectrocatalytic experiment indicated that the superior performance over the B-ZnR electrode was mainly ascribed to the increased specific surface area without significantly sacrificing the charge transport and pollutant diffusion efficiencies. Two aromatic intermediate compounds were observed and eventually converted into harmless carboxylic acids and ammonia. Hierarchical tree-like ZnO arrays can be considered effective alternatives to improve photoelectro degradation rates without the need for expensive additives. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. The SL-assisted synthesis of hierarchical ZnO nanostructures and their enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Miao Tingting; Guo Yuanru; Pan Qingjiang

    2013-01-01

    Hierarchical ZnO nanoparticle-bar, nanomesh-lamina, and quasi-nanosphere structures have been successfully synthesized by the precipitation method with assistance of sodium lignosulphonate (SL). It is shown that the obtained ZnO nanomaterials are well crystallized and possess hexagonal wurtzite structure after calcination. Morphologies of ZnO with particle sizes ranging from 50 to 200 nm can be fabricated by tuning the SL amount in our synthetic route. Plenty of pores have been observed both in nanoparticle-bar and nanomesh-lamina ZnO. This may provide scaffold microenvironments to enhance their photocatalytic activity. It is evident that the synthesized ZnO exhibits good photocatalytic activity of degrading methylene blue, even under a very low-power UV illumination, which allows for the treatment of wastewater containing organic pollutants in an effective way. Among our synthesized nanomaterials, the nanomesh-lamina ZnO has the highest photodegradation efficiency, achieving nearly 100 % degradation only within 1.5 h (UV irradiation power of 12 W). As these ZnO nanomaterials are simply synthesized using SL which is a pulp industry by-product and their intrinsic hierarchical nanostructures show outstanding photocatalytic behavior, we expect the present controllable, environment-friendly, and cost-effective approach to be applied in the synthesis of small-sized ZnO materials.

  1. The SL-assisted synthesis of hierarchical ZnO nanostructures and their enhanced photocatalytic activity

    Science.gov (United States)

    Miao, Ting-Ting; Guo, Yuan-Ru; Pan, Qing-Jiang

    2013-06-01

    Hierarchical ZnO nanoparticle-bar, nanomesh-lamina, and quasi-nanosphere structures have been successfully synthesized by the precipitation method with assistance of sodium lignosulphonate (SL). It is shown that the obtained ZnO nanomaterials are well crystallized and possess hexagonal wurtzite structure after calcination. Morphologies of ZnO with particle sizes ranging from 50 to 200 nm can be fabricated by tuning the SL amount in our synthetic route. Plenty of pores have been observed both in nanoparticle-bar and nanomesh-lamina ZnO. This may provide scaffold microenvironments to enhance their photocatalytic activity. It is evident that the synthesized ZnO exhibits good photocatalytic activity of degrading methylene blue, even under a very low-power UV illumination, which allows for the treatment of wastewater containing organic pollutants in an effective way. Among our synthesized nanomaterials, the nanomesh-lamina ZnO has the highest photodegradation efficiency, achieving nearly 100 % degradation only within 1.5 h (UV irradiation power of 12 W). As these ZnO nanomaterials are simply synthesized using SL which is a pulp industry by-product and their intrinsic hierarchical nanostructures show outstanding photocatalytic behavior, we expect the present controllable, environment-friendly, and cost-effective approach to be applied in the synthesis of small-sized ZnO materials.

  2. Evaluation of gas-sensing properties of ZnO nanostructures electrochemically doped with Au nanophases

    Directory of Open Access Journals (Sweden)

    Elena Dilonardo

    2016-01-01

    Full Text Available A one-step electrochemical method based on sacrificial anode electrolysis (SAE was used to deposit stabilized gold nanoparticles (Au NPs directly on the surface of nanostructured ZnO powders, previously synthesized through a sol–gel process. The effect of thermal annealing temperatures (300 and 550 °C on chemical, morphological, and structural properties of pristine and Au-doped ZnO nancomposites (Au@ZnO was investigated. Transmission and scanning electron microscopy (TEM and SEM, as well as X-ray photoelectron spectroscopy (XPS, revealed the successful deposition of nanoscale gold on the surface of spherical and rod-like ZnO nanostructures, obtained after annealing at 300 and 550 °C, respectively. The pristine ZnO and Au@ZnO nanocomposites are proposed as active layer in chemiresistive gas sensors for low-cost processing. Gas-sensing measurements towards NO2 were collected at 300 °C, evaluating not only the Au-doping effect, but also the influence of the different ZnO nanostructures on the gas-sensing properties.

  3. On-chip surface modified nanostructured ZnO as functional pH sensors

    International Nuclear Information System (INIS)

    Zhang, Qing; Liu, Wenpeng; Sun, Chongling; Zhang, Hao; Pang, Wei; Zhang, Daihua; Duan, Xuexin

    2015-01-01

    Zinc oxide (ZnO) nanostructures are promising candidates as electronic components for biological and chemical applications. In this study, ZnO ultra-fine nanowire (NW) and nanoflake (NF) hybrid structures have been prepared by Au-assisted chemical vapor deposition (CVD) under ambient pressure. Their surface morphology, lattice structures, and crystal orientation were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). Two types of ZnO nanostructures were successfully integrated as gate electrodes in extended-gate field-effect transistors (EGFETs). Due to the amphoteric properties of ZnO, such devices function as pH sensors. We found that the ultra-fine NWs, which were more than 50 μm in length and less than 100 nm in diameter, performed better in the pH sensing process than NW–NF hybrid structures because of their higher surface-to-volume ratio, considering the Nernst equation and the Gouy–Chapman–Stern model. Furthermore, the surface coating of (3-Aminopropyl)triethoxysilane (APTES) protects ZnO nanostructures in both acidic and alkaline environments, thus enhancing the device stability and extending its pH sensing dynamic range. (paper)

  4. Synthesis of ZnO comb-like nanostructures for high sensitivity H2S ...

    Indian Academy of Sciences (India)

    2017-09-15

    Sep 15, 2017 ... H2S gas sensor; ZnO comb-like nanostructures; chemical vapour deposition; vapour–solid growth; ... tube at a flow rate of 15 sccm, when the central temperature .... behaviour, in this case, under low input power implies ohmic.

  5. Life cycle assessment of facile microwave-assisted zinc oxide (ZnO) nanostructures

    CSIR Research Space (South Africa)

    Papadaki, D

    2017-05-01

    Full Text Available The life cycle assessment of several zinc oxide (ZnO) nanostructures, fabricated by a facile microwave technique, is presented. Key synthesis parameters such as annealing temperature, varied from 90 °C to 220 °C, and microwave power, varied from 110...

  6. Enhanced photocatalytic performance of ZnO nanostructures by electrochemical hybridization with graphene oxide

    Science.gov (United States)

    Pruna, A.; Wu, Z.; Zapien, J. A.; Li, Y. Y.; Ruotolo, A.

    2018-05-01

    Synthesis of zinc oxide (ZnO) nanostructures is reported by electrochemical deposition from an aqueous electrolyte in presence of graphene oxide (GO) with varying oxidation degree. The properties of hybrids were investigated by scanning electron microscopy, X-ray diffraction, Raman, Fourier-Transform Infrared and X-ray photoelectron spectroscopy techniques and photocatalytic measurements. The results indicated the electrodeposition of ZnO in presence of GO with increased oxygen content led to marked differences in the morphology while Raman measurements indicated an increased defect level both in the ZnO and the electrochemically reduced GO (ErGO) within the hybrids. The decrease in C/O atomic ratio of GO (from 0.79 to 0.71) employed for the electrodeposition of ZnO resulted in an increase in photocatalytic efficiency for methylene blue degradation under UV irradiation from 4-folds to 10-folds with respect to non-hybridized ZnO. The observed synergetic effect of cathodic deposition potential and oxygen content in GO towards improving the photocatalytic activity of immobilized ZnO is expected to contribute to further development of more effective deposition approaches for the preparation of high performance hybrid nanostructures.

  7. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

    OpenAIRE

    Hullavarad, SS; Hullavarad, NV; Karulkar, PC; Luykx, A; Valdivia, P

    2007-01-01

    AbstractThe ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise a...

  8. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

    Directory of Open Access Journals (Sweden)

    Luykx A

    2007-01-01

    Full Text Available AbstractThe ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise and decay time measurements were also measured.

  9. Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

    Science.gov (United States)

    Seo, Youngmi; Kim, Jung Hyeun

    2011-06-01

    Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

  10. Luminescence properties of hydrothermally grown ZnO nanorods

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2016-01-01

    Roč. 99, 1November (2016), s. 214-220 ISSN 0749-6036 R&D Projects: GA MŠk(CZ) LD14111; GA ČR GA15-17044S Institutional support: RVO:67985882 Keywords : Photoluminescence * Annealing * ZnO nanorods Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.123, year: 2016

  11. ZnO 1-D nanostructures: Low temperature synthesis and ...

    Indian Academy of Sciences (India)

    Wintec

    high-resolution transmission electron microscope (HRTEM;. JEOL 2010). ... low magnification image of the ZnO nanorod arrays show- ing uniformity of the .... in inverted nail like shape. .... where E (local) is the local electric field at the emitting.

  12. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2005-05-15

    Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

  13. A novel low-temperature chemical solution route for straight and dendrite-like ZnO nanostructures

    International Nuclear Information System (INIS)

    Zhang Hui; Du Ning; Wu Jianbo; Ma, Xiangyang; Yang Deren; Zhang Xiaobin; Yang Zhiqing

    2007-01-01

    The straight and dendrite-like growths of ZnO have been completely and simply controlled by the status of ZnO seed instead of surfactant, template, oriented attachment, and ZnO buffer layer on the substrate in the chemical reaction synthesis of ZnO nanostructures. The monodisperse ZnO seeds, which are prepared by in situ quickly injecting the cool mixed zinc acetate and potassium hydrate ethanol solution into the hot matrix aqueous solution of zinc nitrate hydrate and diethylenetriamine at 95 deg. C, improve the straight growth and lots of uniform, straight, and single-crystalline ZnO nanorods with about 20-30 nm in diameter and 300 nm in length are achieved. While, the aggregated ZnO seeds, which are prepared by dropwise adding potassium hydrate ethanol solution into zinc acetate ethanol solution at 60 deg. C for 3 h, result in the dendrite-like growth and the bur-like ZnO nanostructures consisting of hundreds of nanorods with about 30-50 nm in diameter and several micrometers in length are formed. Furthermore, the approach presented here provides a simple, low-cost, environmental-friendly and high efficiency route to synthesize the high quality ZnO nanorods and bur-like ZnO nanostructures

  14. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  15. Fabrication of ZnO Nanostructures with Self-cleaning Functionality

    International Nuclear Information System (INIS)

    Kok, K.Y.; Ng, I.K.; Nur Ubaidah Saidin; Bustaman, F.K.A.

    2011-01-01

    The science of biomimicry has served as a fusion point between nature and technology where one could adopt natures best solution for humans use. Lotus leaf surface, for example, possesses self cleaning capability due to its unique physical and chemical properties. In this work, we aimed to mimic these features on glass surface using ZnO nanostructures to achieve the self-cleaning functionality. A series of ZnO films were electrochemically deposited on indium-doped tin oxide (ITO) conducting glasses from different aqueous electrolytes at systematically varied deposition potentials and electrolyte conditions. The surface morphology, density, orientation and aspect ratio of the ZnO micro/nanostructures obtained were characterized using X-ray diffraction and scanning electron microscopy. Results from these studies show that lower electrolyte concentrations tend to favor one-dimensional growth of ZnO nanostructures that self-assembled into nano flowers at higher deposition temperatures. This hierarchical micro/nano-structured ZnO-modified surface exhibits super hydrophobicity with water contact angle as high as 170 degree. (author)

  16. Nanostructured ZnO films in forms of rod, plate and flower: Electrodeposition mechanisms and characterization

    International Nuclear Information System (INIS)

    Kıcır, Nur; Tüken, Tunç; Erken, Ozge; Gumus, Cebrail; Ufuktepe, Yuksel

    2016-01-01

    Highlights: • Electrosynthesis of ZnO nanostructures in the form of plate, rod and flower. • The role of type and concentration of supporting electrolytes on growth mechanism. • Detailed analysis of morphologies, in comparison with the Literature. • Nanoplate form of ZnO exhibits higher Fermi level and lower band gap. - Abstract: Uniformity and reproducibility of well-defined ZnO nanostructures are particularly important issues for fabrication and applications of these nanomaterials. In present study, we report selective morphology control during electrodeposition, by adjusting the hydroxyl generation rate and Zn(OH)_2 deposition. In presence of remarkably high chloride concentration (0.3 M) and −1.0 V deposition potential, slow precipitation conditions were provided in 5 mM Zn(NO_3)_2 solution. By doing so, we have obtained highly ordered, vertically aligned and uniformly spaced hexagon shaped nanoplates, on ITO surface. We have also investigated the mechanism for shifting the morphology from rod/plate to flower like structure of ZnO, for better understanding the reproducibility. For this reason, the influence of various supporting electrolytes (sodium/ammonium salts of acetate) has been investigated for interpretation of the influence of OH"− concentration nearby the surface. From rod to plate and flower nanostructures, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis were realized for characterization, also the optical properties were studied.

  17. Nanostructured ZnO films in forms of rod, plate and flower: Electrodeposition mechanisms and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kıcır, Nur, E-mail: nurkicir@gmail.com [Chemistry Department, Çukurova University, 01330 Adana (Turkey); Tüken, Tunç [Chemistry Department, Çukurova University, 01330 Adana (Turkey); Erken, Ozge [Physics Department, Adiyaman University, 02040 Adıyaman (Turkey); Gumus, Cebrail; Ufuktepe, Yuksel [Physics Department, Çukurova University, 01330 Adana (Turkey)

    2016-07-30

    Highlights: • Electrosynthesis of ZnO nanostructures in the form of plate, rod and flower. • The role of type and concentration of supporting electrolytes on growth mechanism. • Detailed analysis of morphologies, in comparison with the Literature. • Nanoplate form of ZnO exhibits higher Fermi level and lower band gap. - Abstract: Uniformity and reproducibility of well-defined ZnO nanostructures are particularly important issues for fabrication and applications of these nanomaterials. In present study, we report selective morphology control during electrodeposition, by adjusting the hydroxyl generation rate and Zn(OH){sub 2} deposition. In presence of remarkably high chloride concentration (0.3 M) and −1.0 V deposition potential, slow precipitation conditions were provided in 5 mM Zn(NO{sub 3}){sub 2} solution. By doing so, we have obtained highly ordered, vertically aligned and uniformly spaced hexagon shaped nanoplates, on ITO surface. We have also investigated the mechanism for shifting the morphology from rod/plate to flower like structure of ZnO, for better understanding the reproducibility. For this reason, the influence of various supporting electrolytes (sodium/ammonium salts of acetate) has been investigated for interpretation of the influence of OH{sup −} concentration nearby the surface. From rod to plate and flower nanostructures, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis were realized for characterization, also the optical properties were studied.

  18. Glancing angle deposited Al-doped ZnO nanostructures with different structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yildiz, A., E-mail: yildizab@gmail.com [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences, Yıldırım Beyazıt University, Ankara (Turkey); Cansizoglu, H. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Turkoz, M. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Electrical-Electronic Engineering, Faculty of Engineering, University of Karabuk, Karabuk (Turkey); Abdulrahman, R.; Al-Hilo, Alaa; Cansizoglu, M.F.; Demirkan, T.M.; Karabacak, T. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2015-08-31

    Al-doped ZnO (AZO) nanostructure arrays with different shapes (tilted rods, vertical rods, spirals, and zigzags) were fabricated by utilizing glancing angle deposition (GLAD) technique in a DC sputter growth unit at room temperature. During GLAD, all the samples were tilted at an oblique angle of about 90° with respect to incoming flux direction. In order to vary the shapes of nanostructures, each sample was rotated at different speeds around the substrate normal axis. Rotation speed did not only affect the shape but also changed the microstructural and optical properties of GLAD AZO nanostructures. The experimental results reveal that GLAD AZO nanostructures of different shapes each have unique morphological, crystal structure, mechanical, and optical properties determined by scanning electron microscopy, X-ray diffraction, transmission, and reflectance measurements. Vertical nanorods display the largest grain size, minimum strain, lowest defect density, and highest optical transmittance compared to the other shapes. Growth dynamics of GLAD has been discussed to explain the dependence of structural and optical properties of nanostructures on the substrate rotation speed. - Highlights: • Al-doped ZnO (AZO) nanostructures with different shapes were fabricated. • They have unique morphological, crystal structure, and optical properties. • Vertical AZO nanorods show an enhanced optical transmittance.

  19. Porous nanostructured ZnO films deposited by picosecond laser ablation

    International Nuclear Information System (INIS)

    Sima, Cornelia; Grigoriu, Constantin; Besleaga, Cristina; Mitran, Tudor; Ion, Lucian; Antohe, Stefan

    2012-01-01

    Highlights: ► We deposite porous nanostructured ZnO films by picoseconds laser ablation (PLA). ► We examine changes of the films structure on the experimental parameter deposition. ► We demonstrate PLA capability to produce ZnO nanostructured films free of particulates. - Abstract: Porous nanostructured polycrystalline ZnO films, free of large particulates, were deposited by picosecond laser ablation. Using a Zn target, zinc oxide films were deposited on indium tin oxide (ITO) substrates using a picosecond Nd:YVO 4 laser (8 ps, 50 kHz, 532 nm, 0.17 J/cm 2 ) in an oxygen atmosphere at room temperature (RT). The morpho-structural characteristics of ZnO films deposited at different oxygen pressures (150–900 mTorr) and gas flow rates (0.25 and 10 sccm) were studied. The post-deposition influence of annealing (250–550 °C) in oxygen on the film characteristics was also investigated. At RT, a mixture of Zn and ZnO formed. At substrate temperatures above 350 °C, the films were completely oxidized, containing a ZnO wurtzite phase with crystallite sizes of 12.2–40.1 nm. At pressures of up to 450 mTorr, the porous films consisted of well-distinguished primary nanoparticles with average sizes of 45–58 nm, while at higher pressures, larger clusters (3.1–14.7 μm) were dominant, leading to thicker films; higher flow rates favored clustering.

  20. Efficiency enhancement of ZnO nanostructure assisted Si solar cell based on fill factor enlargement and UV-blue spectral down-shifting

    International Nuclear Information System (INIS)

    Gholizadeh, A; Reyhani, A; Mortazavi, S Z; Parvin, P

    2017-01-01

    ZnO nanostructures (including nano-plates and nano-rods (NRs)) are grown in various temperatures and Ar/O 2 flow rates using thermal chemical vapor deposition, which affect the structure, nano-plate/NR population, and the quality of ZnO nanostructures. X-ray diffraction (XRD) attests that the peak intensity of the crystallographic plane (1 0 0) is correlated to nano-plate abundance. Moreover, optical properties elucidate that the population of nano-plates in samples strongly affect the band gap, binding energy of the exciton, and UV–visible (UV–vis) absorption and spectral luminescence emissions. In fact, the exciton binding energy reduces from ∼100 to 80 meV when the population of nano-plates increases in samples. Photovoltaic characteristics based on the drop-casting on Si solar cells reveals three dominant factors, namely, the equivalent series resistance, decreasing reflectance, and down-shifting, in order to scale up the absolute efficiency by 3%. As a consequence, the oxygen vacancies in ZnO nanostructures give rise to the down-shifting and increase of free-carriers, leading to a reduction in the equivalent series resistance and an enlargement of fill factor. To obtain a larger I sc , reduction of spectral reflectance is essential; however, the down-shifting process is shown to be dominant by lessening the surface electron-hole recombination rate over the UV–blue spectral range. (paper)

  1. Efficiency enhancement of ZnO nanostructure assisted Si solar cell based on fill factor enlargement and UV-blue spectral down-shifting

    Science.gov (United States)

    Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.

    2017-05-01

    ZnO nanostructures (including nano-plates and nano-rods (NRs)) are grown in various temperatures and Ar/O2 flow rates using thermal chemical vapor deposition, which affect the structure, nano-plate/NR population, and the quality of ZnO nanostructures. X-ray diffraction (XRD) attests that the peak intensity of the crystallographic plane (1 0 0) is correlated to nano-plate abundance. Moreover, optical properties elucidate that the population of nano-plates in samples strongly affect the band gap, binding energy of the exciton, and UV-visible (UV-vis) absorption and spectral luminescence emissions. In fact, the exciton binding energy reduces from ~100 to 80 meV when the population of nano-plates increases in samples. Photovoltaic characteristics based on the drop-casting on Si solar cells reveals three dominant factors, namely, the equivalent series resistance, decreasing reflectance, and down-shifting, in order to scale up the absolute efficiency by 3%. As a consequence, the oxygen vacancies in ZnO nanostructures give rise to the down-shifting and increase of free-carriers, leading to a reduction in the equivalent series resistance and an enlargement of fill factor. To obtain a larger I sc, reduction of spectral reflectance is essential; however, the down-shifting process is shown to be dominant by lessening the surface electron-hole recombination rate over the UV-blue spectral range.

  2. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    Science.gov (United States)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  3. Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques

    Energy Technology Data Exchange (ETDEWEB)

    Khranovskyy, Volodymyr, E-mail: volkh@ifm.liu.se [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, 58183 Linkoeping (Sweden); Yakimova, Rositza; Karlsson, Fredrik; Syed, Abdul S.; Holtz, Per-Olof [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, 58183 Linkoeping (Sweden); Nigussa Urgessa, Zelalem [Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Samuel Oluwafemi, Oluwatobi [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI 5117 (South Africa); Reinhardt Botha, Johannes [Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCV) and chemical bath deposition (CBD) are investigated by means of temperature dependent micro-PL. It was found that the low temperature PL spectra are driven by neutral donor bound exciton emission D{sup 0}X, peaked at 3.359 and 3.363 eV for APMOCVD and CBD ZnO nanorods, respectively. The temperature increase causes a red energy shift of the peaks and enhancement of the free excitonic emission (FX). The FX was found to dominate after 150 K for both samples. It was observed that while APMOCVD ZnO nanorods possess a constant low signal of visible deep level emission with temperature, the ZnO nanorods grown by CBD revealed the thermal activation of deep level emission (DLE) after 130 K. The resulting room temperature DLE was a wide band located at 420-550 nm. The PL properties of individual ZnO nanorods can be of importance for their forthcoming application in future optoelectronics and photonics.

  4. Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques

    International Nuclear Information System (INIS)

    Khranovskyy, Volodymyr; Yakimova, Rositza; Karlsson, Fredrik; Syed, Abdul S.; Holtz, Per-Olof; Nigussa Urgessa, Zelalem; Samuel Oluwafemi, Oluwatobi; Reinhardt Botha, Johannes

    2012-01-01

    The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCV) and chemical bath deposition (CBD) are investigated by means of temperature dependent micro-PL. It was found that the low temperature PL spectra are driven by neutral donor bound exciton emission D 0 X, peaked at 3.359 and 3.363 eV for APMOCVD and CBD ZnO nanorods, respectively. The temperature increase causes a red energy shift of the peaks and enhancement of the free excitonic emission (FX). The FX was found to dominate after 150 K for both samples. It was observed that while APMOCVD ZnO nanorods possess a constant low signal of visible deep level emission with temperature, the ZnO nanorods grown by CBD revealed the thermal activation of deep level emission (DLE) after 130 K. The resulting room temperature DLE was a wide band located at 420–550 nm. The PL properties of individual ZnO nanorods can be of importance for their forthcoming application in future optoelectronics and photonics.

  5. Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-30

    In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

  6. Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2013-07-15

    ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

  7. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  8. Structural and optical properties of pentacene films grown on differently oriented ZnO surfaces

    International Nuclear Information System (INIS)

    El Helou, M; Lietke, E; Helzel, J; Heimbrodt, W; Witte, G

    2012-01-01

    Pentacene films have been grown on two polar zinc oxide surfaces, i.e., ZnO(0001) and ZnO(0 0 0 1-bar ), as well as on the mixed-terminated ZnO(1 0 1-bar 0) and are characterized by means of atomic force microscopy (AFM), x-ray diffraction (XRD), and thermal desorption spectroscopy (TDS). In all cases, pentacene aggregates in an upright orientation without any evidence for the formation of an interface stabilized wetting layer. Additional films deposited on a highly-defective, oxygen-depleted ZnO(0 0 0 1-bar ) reveal no altered growth mode. Nearly identical optical absorption spectra have been measured for all films, thus corroborating a weak molecule-substrate interaction. Upon cooling, however, a slightly different relaxation behavior could be resolved for pentacene films on polar ZnO surfaces compared to pentacene on the mixed-terminated ZnO(1 0 1-bar 0) surface.

  9. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  10. Acceptor Type Vacancy Complexes In As-Grown ZnO

    International Nuclear Information System (INIS)

    Zubiaga, A.; Tuomisto, F.; Zuniga-Perez, J.

    2010-01-01

    One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li Zn and Na Zn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

  11. Acceptor Type Vacancy Complexes In As-Grown ZnO

    Science.gov (United States)

    Zubiaga, A.; Tuomisto, F.; Zuñiga-Pérez, J.

    2010-11-01

    One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (˜3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

  12. Facile Hydrothermal Preparation of ZNO/CO3O4 Heterogeneous Nanostructures and its Photovoltaic Effect

    Science.gov (United States)

    Wei, Fanan; Jiang, Minlin; Liu, Lianqing

    2015-07-01

    Photovoltaic technology offers great potential in the replacement of fossil fuel resources, but still suffers from high device fabrication cost. Herein, we attempted to provide a solution to these issues with heterogeneous nanostructures. Firstly, Zinc oxide (ZnO)/cobalt oxide (Co3O4) heterojunction nanowires are prepared through facile fabrication methods. By assembling Co(OH)2 nanoplates on ZnO nanowire arrays, the ZnO/Co3O4 heterogeneous nanostructures are uniformly synthesized on ITO coated glass and wafer. Current (I)-voltage (V) measurement through conductive atomic force microscope shows excellent photovoltaic effect. And, the heterojunction nanostructures shows unprecedented high open circuit voltage. Therefore, the potential application of the heterogeneous nanostructures in solar cells is demonstrated.

  13. Evolution of Structural and Optical Properties of ZnO Nanorods Grown on Vacuum Annealed Seed Crystallites

    Directory of Open Access Journals (Sweden)

    Waqar Khan

    2018-01-01

    Full Text Available In this study, the ambient condition for the as-coated seed layer (SL annealing at 350 °C is varied from air or nitrogen to vacuum to examine the evolution of structural and optical properties of ZnO nanorods (NRs. The NR crystals of high surface density (~240 rods/μm2 and aspect ratio (~20.3 show greatly enhanced (002 degree of orientation and crystalline quality, when grown on the SLs annealed in vacuum, compared to those annealed in air or nitrogen ambient. This is due to the vacuum-annealed SL crystals of a highly preferred orientation toward (002 and large grain sizes. X-ray photoelectron spectroscopy also reveals that the highest O/Zn atomic ratio of 0.89 is obtained in the case of vacuum-annealed SL crystals, which is due to the effective desorption of hydroxyl groups and other contaminants adsorbed on the surface formed during aqueous solution-based growth process. Near band edge emission (ultra violet range of 360–400 nm of the vacuum-annealed SLs is also enhanced by 44% and 33% as compared to those annealed in air and nitrogen ambient, respectively, in photoluminescence with significant suppression of visible light emission associated with deep level transition. Due to this improvement of SL optical crystalline quality, the NR crystals grown on the vacuum-annealed SLs produce ~3 times higher ultra violet emission intensity than the other samples. In summary, it is shown that the ZnO NRs preferentially grow along the wurtzite c-axis direction, thereby producing the high crystalline quality of nanostructures when they grow on the vacuum-annealed SLs of high crystalline quality with minimized impurities and excellent preferred orientation. The ZnO nanostructures of high crystalline quality achieved in this study can be utilized for a wide range of potential device applications such as laser diodes, light-emitting diodes, piezoelectric transducers and generators, gas sensors, and ultraviolet detectors.

  14. ZnO nanostructures induced by microwave plasma

    Directory of Open Access Journals (Sweden)

    Khaled A. Elsayed

    2015-07-01

    Full Text Available Microwave induced hydrogen plasma is used to fabricate ZnO thin films at low ambient gas pressure and controlled oxygen content in the gas mixture. The emission spectra have been observed. Optical emission spectroscopy was used to identify the chemical reaction mechanism. Structural quality of the so-obtained nanoparticles was studied by X-ray diffraction (XRD and high resolution scanning electron microscopy (SEM. SEM results showed that nanorods were formed in the process, and XRD results along with nanorod dimensions obtained from SEM are consistent with the formation of single and poly-crystalline ZnO nanorods. The alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the glass substrate. The minimum crystallite grain size as obtained from the SEM measurements was ∼24 nm and the average diameter is 70 nm with a length of 1–2 μm. The deposited ZnO thin films have a wide energy band gap that equals ∼3 eV.

  15. Synthesis and characterization of ZnO nanostructures with varying ...

    Indian Academy of Sciences (India)

    2017-05-13

    May 13, 2017 ... Composition of the reactant solution, pH and temperature ... due to the broad spectrum of UV radiation absorption, supe- ... In addition, ZnO is very useful to cure various other skin ... be used as promising candidate for coating of orthopedic ... tape and then coated with gold for 40 s in an auto-fine coater.

  16. Growth of Comb-like ZnO Nanostructures for Dye-sensitized Solar Cells Applications

    Directory of Open Access Journals (Sweden)

    Umar Ahmad

    2009-01-01

    Full Text Available Abstract Dye-sensitized solar cells (DSSCs were fabricated by using well-crystallized ZnO nanocombs directly grown onto the fluorine-doped tin oxide (FTO via noncatalytic thermal evaporation process. The thin films of as-grown ZnO nanocombs were used as photoanode materials to fabricate the DSSCs, which exhibited an overall light to electricity conversion efficiency of 0.68% with a fill factor of 34%, short-circuit current of 3.14 mA/cm2, and open-circuit voltage of 0.671 V. To the best of our knowledge, this is first report in which thin film of ZnO nanocombs was used as photoanode materials to fabricate the DSSCs.

  17. A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Yamin, E-mail: yaminfengccnuphy@outlook.com; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.cn

    2013-12-25

    Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm{sup −2} illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes.

  18. A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

    International Nuclear Information System (INIS)

    Feng, Yamin; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang

    2013-01-01

    Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm −2 illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes

  19. Nanostructured ZnO films for potential use in LPG gas sensors

    Science.gov (United States)

    Latyshev, V. M.; Berestok, T. O.; Opanasyuk, A. S.; Kornyushchenko, A. S.; Perekrestov, V. I.

    2017-05-01

    The aim of the work was to obtain ZnO nanostructures with heightened surface area and to study relationship between formation method and gas sensor properties towards propane-butane mixture (LPG). In order to synthesize ZnO nanostructures chemical and physical formation methods have been utilized. The first one was chemical bath deposition technology and the second one magnetron sputtering of Zn followed by oxidation. Optimal method and technological parameters corresponding to formation of material with the highest sensor response have been determined experimentally. Dynamical gas sensor response at different temperature values and dependencies of the sensor sensitivity on the temperature at different LPG concentrations in air have been investigated. It has been found, that sensor response depends on the sample morphology and has the highest value for the structure consisting of thin nanowires. The factors that lead to the decrease in the gas sensor operating temperature have been determined.

  20. Vibrational Order, Structural Properties, and Optical Gap of ZnO Nanostructures Sintered through Thermal Decomposition

    Directory of Open Access Journals (Sweden)

    Alejandra Londono-Calderon

    2014-01-01

    Full Text Available The sintering of different ZnO nanostructures by the thermal decomposition of zinc acetate is reported. Morphological changes from nanorods to nanoparticles are exhibited with the increase of the decomposition temperature from 300 to 500°C. The material showed a loss in the crystalline order with the increase in the temperature, which is correlated to the loss of oxygen due to the low heating rate used. Nanoparticles have a greater vibrational freedom than nanorods which is demonstrated in the rise of the main Raman mode E 2(high during the transformation. The energy band gap of the nanostructured material is lower than the ZnO bulk material and decreases with the rise in the temperature.

  1. Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Marta M., E-mail: martamalves@tecnico.ulisboa.pt [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); Santos, Catarina F.; Carmezim, Maria J. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); EST Setúbal, DEM, Instituto Politécnico de Setúbal, Campus IPS, 2910 Setúbal (Portugal); Montemor, Maria F. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal)

    2015-03-30

    Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO{sub 3}){sub 2} aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices.

  2. Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

    International Nuclear Information System (INIS)

    Alves, Marta M.; Santos, Catarina F.; Carmezim, Maria J.; Montemor, Maria F.

    2015-01-01

    Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO 3 ) 2 aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices

  3. High electro-catalytic activities of glucose oxidase embedded one-dimensional ZnO nanostructures

    International Nuclear Information System (INIS)

    Sarkar, Nirmal K; Bhattacharyya, Swapan K

    2013-01-01

    One-dimensional ZnO nanorods and nanowires are separately synthesized on Zn substrate by simple hydrothermal processes at low temperatures. Electro-catalytic responses of glucose oxidase/ZnO/Zn electrodes using these two synthesized nanostructures of ZnO are reported and compared with others available in literature. It is apparent the Michaelis–Menten constant, K M app , for the present ZnO nanowire, having a greater aspect ratio, is found to be the lowest when compared with others. This sensor shows lower oxidation peak potential with a long detection range of 6.6 μM–380 mM and the highest sensitivity of ∼35.1 μA cm −2 mM −1 , among the reported values in the literature. Enzyme catalytic efficiency and turnover numbers are also found to be remarkably high. (paper)

  4. Double-layered ZnO nanostructures for efficient perovskite solar cells

    KAUST Repository

    Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

    2014-01-01

    To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

  5. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Energy Technology Data Exchange (ETDEWEB)

    Shaik, Ummar Pasha [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Purkayastha, Debarun Dhar, E-mail: ddebarun@yahoo.com [Department of Physics, National Institute of Technology Nagaland, Chumukedima, Dimapur 797103 (India); Krishna, M. Ghanashyam [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Madhurima, V. [Department of Physics, Central University of Tamil Nadu, Thiruvarur 610004 (India)

    2015-03-01

    Highlights: • Zn metal films were deposited by thermal evaporation, on various substrates. • Upon annealing Zn there is transformation of the Zn nanosheets into ZnO nanowires. • ZnO nanowires are superhydrophobic and exhibit wetting transition on UV exposure. • ZnO will be useful in self-cleaning, mechanical and oxidation resistance surfaces. - Abstract: Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15–0.8 GPa and 18–300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic–hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  6. Mechanism and Growth of Flexible ZnO Nanostructure Arrays in a Facile Controlled Way

    Directory of Open Access Journals (Sweden)

    Yangping Sheng

    2011-01-01

    Full Text Available Nanostructure arrays-based flexible devices have revolutionary impacts on the application of traditional semiconductor devices. Here, a one-step method to synthesize flexible ZnO nanostructure arrays on Zn-plated flexible substrate in Zn(NO32/NH3⋅H2O solution system at 70–90∘C was developed. We found out that the decomposition of Zn(OH2 precipitations, formed in lower NH3⋅H2O concentration, in the bulk solution facilitates the formation of flower-like structure. In higher temperature, 90∘C, ZnO nanoplate arrays were synthesized by the hydrolysis of zinc hydroxide. Highly dense ZnO nanoparticale layer formed by the reaction of NH3⋅H2O with Zn plating layer in the initial self-seed process could improve the vertical alignment of the nanowires arrays. The diameter of ZnO nanowire arrays, from 200 nm to 60 nm, could be effectively controlled by changing the stability of Zn(NH342+ complex ions by varying the ratio of Zn(NO32 to NH3⋅H2O which further influence the release rate of Zn2+ ions. This is also conformed by different amounts of the Zn vacancy as determined by different UV emissions of the PL spectra in the range of 380–403 nm.

  7. Superhydrophobic multi-scale ZnO nanostructures fabricated by chemical vapor deposition method.

    Science.gov (United States)

    Zhou, Ming; Feng, Chengheng; Wu, Chunxia; Ma, Weiwei; Cai, Lan

    2009-07-01

    The ZnO nanostructures were synthesized on Si(100) substrates by chemical vapor deposition (CVD) method. Different Morphologies of ZnO nanostructures, such as nanoparticle film, micro-pillar and micro-nano multi-structure, were obtained with different conditions. The results of XRD and TEM showed the good quality of ZnO crystal growth. Selected area electron diffraction analysis indicates the individual nano-wire is single crystal. The wettability of ZnO was studied by contact angle admeasuring apparatus. We found that the wettability can be changed from hydrophobic to super-hydrophobic when the structure changed from smooth particle film to single micro-pillar, nano-wire and micro-nano multi-scale structure. Compared with the particle film with contact angle (CA) of 90.7 degrees, the CA of single scale microstructure and sparse micro-nano multi-scale structure is 130-140 degrees, 140-150 degrees respectively. But when the surface is dense micro-nano multi-scale structure such as nano-lawn, the CA can reach to 168.2 degrees . The results indicate that microstructure of surface is very important to the surface wettability. The wettability on the micro-nano multi-structure is better than single-scale structure, and that of dense micro-nano multi-structure is better than sparse multi-structure.

  8. Hydrothermally grown ZnO nanorods on self-source substrate and their field emission

    International Nuclear Information System (INIS)

    Liu, J P; Xu, C X; Zhu, G P; Li, X; Cui, Y P; Yang, Y; Sun, X W

    2007-01-01

    Vertically aligned zinc oxide nanorod arrays were grown directly using a zinc foil as both source and substrate in pure water at low temperature by a simple hydrothermal reaction. The morphology and crystal structure of the ZnO nanorod arrays were examined by scanning electron microscopy, transmission electron microscopy and x-ray diffraction, respectively. The nanorods grew along the [0 0 0 1] direction and were 80 nm in diameter and almost 2 μm in length. Directly employing the zinc foil substrate as cathode, the field emission (FE) of the ZnO nanorods presented a two-stage slope behaviour in a ln(J/E 2 )-1/E plot according to the Fowler-Nordheim equation. The FE behaviour was investigated by considering the action of the defects in ZnO nanorods based on the measurement of the photoluminescence

  9. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  10. Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

    Science.gov (United States)

    Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

    2018-04-01

    We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

  11. Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties

    Energy Technology Data Exchange (ETDEWEB)

    Yayapao, Oranuch [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Titipun, E-mail: ttpthongtem@yahoo.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Phuruangrat, Anukorn, E-mail: phuruangrat@hotmail.com [Department of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112 (Thailand); Thongtem, Somchai [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2013-11-05

    Highlights: •Undoped and Dy-doped ZnO used as photocatalysts. •They were synthesized by sonochemistry. •The promising materials for treatment of organic pollutants. -- Abstract: Dy-doped ZnO nanostructures were synthesized by a sonochemical method. The concentration effect of Dy on their phase, morphology, optical properties and photocatalytic activities was investigated. XRD patterns indicated that the as-synthesized 0–3% Dy-doped ZnO was hexagonal wurtzite structure. SEM and TEM show that the products were nanorods with their growth direction along the c axis. The photoluminescence spectrum of 3% Dy-doped ZnO, applied by Gaussian analysis, consists of three emission peaks at 376 nm, 448 nm and 487 nm. The photocatalytic activities of the as-synthesized products were determined from the degradation of methylene blue (C{sub 16}H{sub 18}N{sub 3}SCl) by UV radiation. In this research, the 3% Dy-doped ZnO showed the highest photocatalytic activity.

  12. Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties

    International Nuclear Information System (INIS)

    Yayapao, Oranuch; Thongtem, Titipun; Phuruangrat, Anukorn; Thongtem, Somchai

    2013-01-01

    Highlights: •Undoped and Dy-doped ZnO used as photocatalysts. •They were synthesized by sonochemistry. •The promising materials for treatment of organic pollutants. -- Abstract: Dy-doped ZnO nanostructures were synthesized by a sonochemical method. The concentration effect of Dy on their phase, morphology, optical properties and photocatalytic activities was investigated. XRD patterns indicated that the as-synthesized 0–3% Dy-doped ZnO was hexagonal wurtzite structure. SEM and TEM show that the products were nanorods with their growth direction along the c axis. The photoluminescence spectrum of 3% Dy-doped ZnO, applied by Gaussian analysis, consists of three emission peaks at 376 nm, 448 nm and 487 nm. The photocatalytic activities of the as-synthesized products were determined from the degradation of methylene blue (C 16 H 18 N 3 SCl) by UV radiation. In this research, the 3% Dy-doped ZnO showed the highest photocatalytic activity

  13. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  14. Facile synthesis of one dimensional ZnO nanostructures for DSSC applications

    International Nuclear Information System (INIS)

    Marimuthu, T.; Anandhan, N.

    2016-01-01

    Development of zinc oxide (ZnO) nanostructure based third generation dye sensitized solar cell is interesting compared to conventional silicon solar cells. ZnO nanostructured thin films were electrochemically deposited onto fluorine doped tin oxide (FTO) glass substrate. The effect of ethylene-diamine-tetra-acetic acid (EDTA) on structural, morphological and optical properties is investigated using X-ray diffraction (XRD) meter, field emission scanning electron microscope (FE-SEM) and micro Raman spectroscopy. XRD patterns reveal that the prepared nanostructures are hexagonal wutrzite structures with (101) plane orientation, the nanostructure prepared using EDTA exhibits better crystallinity. FE-SEM images illustrate that the morphological changes are observed from nanorod structure to cauliflower like structure as EDTA is added. Micro Raman spectra predict that cauliflower like structure possesses a higher crystalline nature with less atomic defects compared to nanorod structures. Dye sensitized solar cell (DSSC) is constructed for the optimized cauliflower structure, and open circuit voltage, short circuit density, fill factor and efficiency are estimated from the J-V curve.

  15. Facile synthesis of one dimensional ZnO nanostructures for DSSC applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, School of Physics, Alagappa University, Karaikudi – 630 003, India. (India)

    2016-05-06

    Development of zinc oxide (ZnO) nanostructure based third generation dye sensitized solar cell is interesting compared to conventional silicon solar cells. ZnO nanostructured thin films were electrochemically deposited onto fluorine doped tin oxide (FTO) glass substrate. The effect of ethylene-diamine-tetra-acetic acid (EDTA) on structural, morphological and optical properties is investigated using X-ray diffraction (XRD) meter, field emission scanning electron microscope (FE-SEM) and micro Raman spectroscopy. XRD patterns reveal that the prepared nanostructures are hexagonal wutrzite structures with (101) plane orientation, the nanostructure prepared using EDTA exhibits better crystallinity. FE-SEM images illustrate that the morphological changes are observed from nanorod structure to cauliflower like structure as EDTA is added. Micro Raman spectra predict that cauliflower like structure possesses a higher crystalline nature with less atomic defects compared to nanorod structures. Dye sensitized solar cell (DSSC) is constructed for the optimized cauliflower structure, and open circuit voltage, short circuit density, fill factor and efficiency are estimated from the J-V curve.

  16. Synthesis of Cu Doped ZnO Nanostructures for Ultra Violet Sensing

    Directory of Open Access Journals (Sweden)

    Nazar Abbas SHAH

    2015-03-01

    Full Text Available This paper mainly focused on the synthesis of zinc oxide nanostructures, their characterization and their ultra violet light sensing response at room temperature. Nanowires, nanobelts and nanosheets were synthesized by varying doping material copper by using vapor transport technique governed by the vapor-liquid-solid or vapor-solid mechanisms. The structural, morphological and optical characterization was carried out using X-ray diffraction, scanning electron microscopy, energy dispersive X-Ray and ultra violet visible spectroscopy techniques. Finally the ultra violet light sensing response of these nanostructures was observed by using Keithley meter. The high ultra violet photosensitivity and fast response time justifies the effective utilization of these ZnO nanostructures as ultra violet sensors in different areas.

  17. Origin of green luminescence in hydrothermally grown ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Čížek, J., E-mail: jakub.cizek@mff.cuni.cz; Hruška, P.; Melikhova, O.; Procházka, I. [Department of Low-Temperature Physics, Charles University in Prague, V Holešovičkách 2, CZ-180 00, Prague 8 (Czech Republic); Valenta, J. [Department of Chemical Physics and Optics, Charles University in Prague, Ke Karlovu 3, CZ-121 16, Prague 2 (Czech Republic); Novotný, M.; Bulíř, J. [Academy of Science of the Czech Republic, Institute of Physics, Na Slovance 2, CZ-182 21 Praha 8 (Czech Republic)

    2015-06-22

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

  18. Origin of green luminescence in hydrothermally grown ZnO single crystals

    International Nuclear Information System (INIS)

    Čížek, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Valenta, J.; Novotný, M.; Bulíř, J.

    2015-01-01

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration

  19. Origin of green luminescence in hydrothermally grown ZnO single crystals

    Science.gov (United States)

    Čížek, J.; Valenta, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Novotný, M.; Bulíř, J.

    2015-06-01

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

  20. Polarization dependent femtosecond laser modification of MBE-grown III-V nanostructures on silicon

    OpenAIRE

    Zandbergen, Sander R.; Gibson, Ricky; Amirsolaimani, Babak; Mehravar, Soroush; Keiffer, Patrick; Azarm, Ali; Kieu, Khanh

    2017-01-01

    We report a novel, polarization dependent, femtosecond laser-induced modification of surface nanostructures of indium, gallium, and arsenic grown on silicon via molecular beam epitaxy, yielding shape control from linear and circular polarization of laser excitation. Linear polarization causes an elongation effect, beyond the dimensions of the unexposed nanostructures, ranging from 88 nm to over 1 um, and circular polarization causes the nanostructures to flatten out or form loops of material,...

  1. Influence of different carrier gases on the properties of ZnO films grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Wang, Jinzhong

    2008-08-01

    Full Text Available ZnO films were grown on sapphire (001 substrate by atmospheric MOCVD using diethyl zinc and tertiary butanol precursors. The influence of different carrier gases (H2 and He on the properties was analyzed by their structural (XRD, microstructural (SEM and compositional (SIMS characterization. The intensity of the strongest diffraction peak from ZnO (002 plane was increased by about 2 orders of magnitude when He is used as carrier gas, indicating the significant enhancement in crystallinity. The surface of the samples grown using H2 and He carrier gases was composed of leaf-like and spherical grains respectively. Hydrogen [H] content in the film grown using H2 is higher than that using He, indicating that the [H] was influenced by the H2 carrier gas. Ultraviolet emission dominates the low temperature PL spectra. The emission from ZnO films grown using He show higher optical quality and more emission centers.

    Se depositaron películas de ZnO sobre sustratos de zafiro (001 utilizando dietil zinc y butanol terciario como precursores. La influencia de los diferentes gases portadores (H2 y He sobre las propiedades se estudió mediante la caracterización estructural (XRD, microestructural (SEM y composicional (SIMS. La intensidad del pico de difracción más importante del plano (002 del ZnO aumentó en dos órdenes de magnitud cuando se utiliza He como gas portador indicando un incremento significativo de la cristalinidad. La superficie de las muestras crecidas utilizando H2 y He está formada por granos en forma de hoja y de forma esférica respectivamente. El contenido en hidrógeno (H en la película es mayor cuando se utiliza H2 que cuando se utiliza He, indicando que la cantidad de hidrógeno está influenciada por el H2 del gas portador. La emisión ultravioleta domina el espectro PL de baja temperatura. La emisión de las películas de ZnO utilizando

  2. Magnetic properties of nickel nanostructures grown in AAO membrane

    International Nuclear Information System (INIS)

    Oh, S.-L.; Kim, Y.-R.; Malkinski, L.; Vovk, A.; Whittenburg, S.L.; Kim, E.-M.; Jung, J.-S.

    2007-01-01

    One-dimensional nanostructures can be built by performing chemical or electrochemical reactions in the pores of a suitable host or matrix material. We have developed a method of electrodeposition of nickel nanostructures inside cylindrical pores of the anodic aluminum oxide (AAO) membranes, which provides precise control of the nanostructure height. We were able to fabricate hexagonal arrays of particles in the form of spheres, rods and long wires. Magnetization measurements of these nanostructures as function of field and temperature were carried out using a superconducting quantum-interference device magnetometer. The shape of nickel nanostructures has been investigated by field emission scanning electron microscope. The coercivity of the nickel nanostructures measured with the field perpendicular to the membrane was increasing with increasing aspect ratio of the nanostructures. These experimental values of the coercivity, varying from 200 Oe for the spherical nanodots to 730 Oe for the nanowires, are in a fair agreement with our micromagnetic modeling calculations

  3. Magnetic properties of nickel nanostructures grown in AAO membrane

    Energy Technology Data Exchange (ETDEWEB)

    Oh, S -L [Department of Chemistry, Yonsei University, Seoul (Korea, Republic of); Kim, Y -R [Department of Chemistry, Yonsei University, Seoul (Korea, Republic of); Malkinski, L [Advanced Material Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Vovk, A [Advanced Material Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Whittenburg, S L [Advanced Material Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Kim, E -M [Korea Basic Science Institute, Kangnung 210-702 (Korea, Republic of); Jung, J -S [Department of Chemistry, Kangnung National University, Kangnung 210-702 (Korea, Republic of)

    2007-03-15

    One-dimensional nanostructures can be built by performing chemical or electrochemical reactions in the pores of a suitable host or matrix material. We have developed a method of electrodeposition of nickel nanostructures inside cylindrical pores of the anodic aluminum oxide (AAO) membranes, which provides precise control of the nanostructure height. We were able to fabricate hexagonal arrays of particles in the form of spheres, rods and long wires. Magnetization measurements of these nanostructures as function of field and temperature were carried out using a superconducting quantum-interference device magnetometer. The shape of nickel nanostructures has been investigated by field emission scanning electron microscope. The coercivity of the nickel nanostructures measured with the field perpendicular to the membrane was increasing with increasing aspect ratio of the nanostructures. These experimental values of the coercivity, varying from 200 Oe for the spherical nanodots to 730 Oe for the nanowires, are in a fair agreement with our micromagnetic modeling calculations.

  4. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  5. Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

    Science.gov (United States)

    Kim, Hyomin; Kwon, Yiseul; Choe, Youngson

    2013-05-01

    We have investigated the effect of fibrous nanostructured ZnO film as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the concentration of zinc acetate dihydrate, the changes of performance characteristics were evaluated. Fibrous nanostructured ZnO film was prepared by sol-gel process and annealed on a hot plate. As the concentration of zinc acetate dihydrate increased, ZnO fibrous nanostructure grew from 300 to 600 nm. The obtained ZnO nanostructured fibrous films have taken the shape of a maze-like structure and were characterized by UV-visible absorption, scanning electron microscopy, and X-ray diffraction techniques. The intensity of absorption bands in the ultraviolet region was increased with increasing precursor concentration. The X-ray diffraction studies show that the ZnO fibrous nanostructures became strongly (002)-oriented with increasing concentration of precursor. The bulk heterojunction photovoltaic cells were fabricated using poly(3-hexylthiophene-2,5-diyl) and indene-C60 bisadduct as active layer, and their electrical properties were investigated. The external quantum efficiency of the fabricated device increased with increasing precursor concentration.

  6. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  7. Role of Fe doping on structural and vibrational properties of ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyarajan, T.; Udayabhaskar, R.; Karthikeyan, B. [National Institute of Technology, Department of Physics, Tiruchirappalli (India)

    2012-05-15

    In this report, Raman and Fourier Transform Infrared (FTIR) measurements were carried out to study the phonon modes of pure and Fe doped ZnO nanoparticles. The nanoparticles were prepared by sol-gel technique at room temperature. The X-ray diffraction measurements reveal that the nanoparticles are in hexagonal wurtzite structure and doping makes the shrinkage of the lattice parameters, whereas there is no alteration in the unit cell. Raman measurements show both E{sub 2}{sup low} and E{sub 2}{sup High} optical phonon mode is shifted towards lower wave number with Fe incorporation and explained on the basis of force constant variation, stress measurements, respectively. In addition, Fe related local vibrational modes (LVM) were observed for higher concentration of Fe doping. FTIR spectra reveal a band at 444 cm{sup -1} which is specific to E{sub 1} (TO) mode; a red-shift of this mode in Fe doped samples and some surface phonon modes were observed. Furthermore, the observation of additional IR modes, which is considered to have an origin related to Fe dopant in the ZnO nanostructures, is also reported. These additional mode features can be regarded as an indicator for the incorporation of Fe ions into the lattice position of the ZnO nanostructures. (orig.)

  8. Enhanced local piezoelectric response in the erbium-doped ZnO nanostructures prepared by wet chemical synthesis

    Directory of Open Access Journals (Sweden)

    Reza Zamiri

    2017-03-01

    Full Text Available Pure and erbium (Er doped ZnO nanostructures were prepared by simple and cost effective wet chemical precipitation method. The successful doping with phase purity of prepared ZnO nanostructure was confirmed by X-ray diffraction (XRD and their Rietveld analysis. The change in structural morphology of nanoscale features of prepared ZnO nanopowders on Er doping was observed from their scanning electron microscopy (SEM images. The presence of Er in prepared ZnO nanopowder was further confirmed from corresponding energy dispersive X-ray spectroscopy (EDX spectra of scanned SEM images. Piezoelectric properties of before (green samples and after sintering of consolidated compact of synthesized nanopowders were successfully measured. The out-of-plane (effective longitudinal and in-plane (effective shear coefficients of the samples were estimated from the local piezoresponse.

  9. Nanostructured ZnO films: A study of molecular influence on transport properties by impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sappia, Luciano D.; Trujillo, Matias R. [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Lorite, Israel [Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, Linnéstrasse 5, 04103 Leipzig (Germany); Madrid, Rossana E., E-mail: rmadrid@herrera.unt.edu.ar [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Tirado, Monica [NanoProject and Laboratorio de Nanomateriales y Propiedades Dieléctricas, Departamento de Física, Universidad Nacional de Tucumán, Avenida Independencia 1800, Tucumán (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); and others

    2015-10-15

    Graphical abstract: - Highlights: • We study electrical transport in nanostructured ZnO films by impedance spectroscopy. • Bioaggregates on the surface produce strong changes in film transport properties. • This behavior is explained by modeling data with RC parallel circuits. • Electrical responses of ZnO films to aggregates are promising for biosensing. - Abstract: Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like Glucose Oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment to preserve the activity of the enzyme. In this work we study the electrical transport properties of ZnO thin films (TFs) and single crystals (SC) in contact with different solutions by using impedance spectroscopy. We have found that the composition of the liquid, by means of the charge of the ions, produces strong changes in the transport properties of the TF. The enzyme GOx and phosphate buffer solutions have the major effect in the conduction through the films, which can be explained by the entrapment of carriers at the grain boundaries of the TFs. These results can help to design a new concept in glucose biosensing.

  10. Enhanced Photocatalytic Activity of Rare Earth Metal (Nd and Gd doped ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    P. Logamani

    2017-06-01

    Full Text Available Presence of harmful organic pollutants in wastewater effluents causes serious environmental problems and therefore purification of this contaminated water by a cost effective treatment method is one of the most important issue which is in urgent need of scientific research. One such promising treatment technique uses semiconductor photocatalyst for the reduction of recalcitrant pollutants in water. In the present work, rare earth metals (Nd and Gd doped ZnO nanostructured photocatalyst have been synthesized by wet chemical method. The prepared samples were characterized by X-ray diffraction (XRD, Field Emission Scanning Electron Microscopy (FESEM and energy dispersive X-ray spectroscopy (EDS. The XRD results showed that the prepared samples were well crystalline with hexagonal Wurtzite structure. The results of EDS revealed that rare earth elements were doped into ZnO structure. The effect of rare earth dopant on morphology and photocatalytic degradation properties of the prepared samples were studied and discussed. The results revealed that the rare earth metal doped ZnO samples showed enhanced visible light photocatalytic activity for the degradation of methylene blue dye than pure nano ZnO photocatalyst.

  11. Role of VI/II ratio on the growth of ZnO nanostructures using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N., E-mail: zelalem.urgessa@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Botha, J.R. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    In this paper the growth process and morphological evolution of ZnO nanostructures were investigated in a series of experiments using chemical bath deposition. The experimental results indicate that the morphological evolution depends on the reaction conditions, particularly on OH{sup -} to Zn{sup 2+} ratio (which directly affects the pH). For low VI/II ratios, quasi-spherical nanoparticles of an average diameter 30 nm are obtained, whereas for larger VI/II ratios, nanorods with an average diameter less than 100 nm are produced, which indicates that by systematically controlling the VI/II ratio, it is possible to produce different shapes and sizes of ZnO nanostructures. A possible mechanism for the nanostructural change of the as-synthesized ZnO from particle to rod was elucidated based on the relative densities of H{sup +} and OH{sup -} in the solution.

  12. Role of VI/II ratio on the growth of ZnO nanostructures using chemical bath deposition

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Oluwafemi, O.S.; Botha, J.R.

    2012-01-01

    In this paper the growth process and morphological evolution of ZnO nanostructures were investigated in a series of experiments using chemical bath deposition. The experimental results indicate that the morphological evolution depends on the reaction conditions, particularly on OH − to Zn 2+ ratio (which directly affects the pH). For low VI/II ratios, quasi-spherical nanoparticles of an average diameter 30 nm are obtained, whereas for larger VI/II ratios, nanorods with an average diameter less than 100 nm are produced, which indicates that by systematically controlling the VI/II ratio, it is possible to produce different shapes and sizes of ZnO nanostructures. A possible mechanism for the nanostructural change of the as-synthesized ZnO from particle to rod was elucidated based on the relative densities of H + and OH − in the solution.

  13. Controllable synthesis of spindle-like ZnO nanostructures by a simple low-temperature aqueous solution route

    International Nuclear Information System (INIS)

    Lu Hongxia; Zhao Yunlong; Yu Xiujun; Chen Deliang; Zhang Liwei; Xu Hongliang; Yang Daoyuan; Wang Hailong; Zhang Rui

    2011-01-01

    Spindle-like ZnO nanostructures were successfully synthesized through direct precipitation of zinc acetate aqueous solution at 60 deg. C. Phase structure, morphology and microstructure of the products were investigated by X-ray diffraction, TG-DTA, FTIR and field emission scanning electron microscopy (FESEM). Result showed that hexagonal wurtzite structure ZnO nanostructures with about 100 nm in diameter and 100-200 nm in length were obtained. HMTA acted as a soft template in the process and played an important role in the formation of spindle-like ZnO nanostructures. Meanwhile, different morphologies were also obtained by altering synthetic temperature, additional agents and the ratios of Zn 2+ /OH - . Possible mechanism for the variations of morphology with synthesis parameters was also discussed in this paper.

  14. Simultaneous tuning of electric field intensity and structural properties of ZnO: Graphene nanostructures for FOSPR based nicotine sensor.

    Science.gov (United States)

    Tabassum, Rana; Gupta, Banshi D

    2017-05-15

    We report theoretical and experimental realization of a SPR based fiber optic nicotine sensor having coatings of silver and graphene doped ZnO nanostructure onto the unclad core of the optical fiber. The volume fraction (f) of graphene in ZnO was optimized using simulation of electric field intensity. Four types of graphene doped ZnO nanostructures viz. nanocomposites, nanoflowers, nanotubes and nanofibers were prepared using optimized value of f. The morphology, photoluminescence (PL) spectra and UV-vis spectra of these nanostructures were studied. The peak PL intensity was found to be highest for ZnO: graphene nanofibers. The optimized value of f in ZnO: graphene nanofiber was reconfirmed using UV-vis spectroscopy. The experiments were performed on the fiber optic probe fabricated with Ag/ZnO: graphene layer and optimized parameters for in-situ detection of nicotine. The interaction of nicotine with ZnO: graphene nanostructures alters the dielectric function of ZnO: graphene nanostructure which is manifested in terms of shift in resonance wavelength. From the sensing signal, the performance parameters were measured including sensitivity, limit of detection (LOD), limit of quantification (LOQ), stability, repeatability and selectivity. The real sample prepared using cigarette tobacco leaves and analyzed using the fabricated sensor makes it suitable for practical applications. The achieved values of LOD and LOQ are found to be unrivalled in comparison to the reported ones. The sensor possesses additional advantages such as, immunity to electromagnetic interference, low cost, capability of online monitoring, remote sensing. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

    2012-01-01

    The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

  16. Surface characterization of ZnO nanorods grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mbulanga, C.M., E-mail: crispin.mbulanga@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Urgessa, Z.N.; Tankio Djiokap, S.R.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Duvenhage, M.M.; Swart, H.C. [Department of Physics, University of the Free State, P.O Box 77000, Bloemfontein ZA9300 (South Africa)

    2016-01-01

    The surface composition of as-grown and annealed ZnO nanorods (ZNs) grown by a two-step chemical bath deposition method is investigated by the following surface-sensitive techniques: Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). The presence of H on the surface and throughout the entire thickness of ZNs is confirmed by TOF-SIMS. Based on TOF-SIMS results, the O2 XPS peak mostly observable at ~531.5 is assigned to O bound to H. Furthermore, it is found that the near surface region of as-grown ZNs is Zn-rich, and annealing at high temperature (~850 °C) removes H-related defects from the surface of ZNs and affect the balance of zinc and oxygen concentrations.

  17. Field emission from carbon nanotube bundle arrays grown on self-aligned ZnO nanorods

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Ai Lei; Xiang Qi; Zhao Dongshan; Pan Chunxu; Zhao Xingzhong

    2007-01-01

    The field emission (FE) properties of carbon nanotube (CNT) bundle arrays grown on vertically self-aligned ZnO nanorods (ZNRs) are reported. The ZNRs were first synthesized on ZnO-seed-coated Si substrate by the vapour phase transport method, and then the radically grown CNTs were grown directly on the surface of the ZNRs from ethanol flames. The CNT/ZNR composite showed a turn-on field of 1.5 V μm -1 (at 0.1 μA cm -2 ), a threshold field of 4.5 V μm -1 (at 1 mA cm -2 ) and a stable emission current with fluctuations of 5%, demonstrating significantly enhanced FE of ZNRs due to the low work function and high aspect ratio of the CNTs, and large surface-to-volume ratio of the underlying ZNRs

  18. Room temperature ferromagnetism and gas sensing in ZnO nanostructures: Influence of intrinsic defects and Mn, Co, Cu doping

    Energy Technology Data Exchange (ETDEWEB)

    Mhlongo, Gugu H., E-mail: gmhlongo@csir.co.za [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Shingange, Katekani; Tshabalala, Zamaswazi P.; Dhonge, Baban P. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Mahmoud, Fawzy A. [Solid State Physics Dept., National Research Centre, P.O. 12622, Dokki, Giza (Egypt); Mwakikunga, Bonex W.; Motaung, David E. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa)

    2016-12-30

    Highlights: • Preparation of Mn, Co, Cu doped ZnO via microwave-assisted method. • Doping alters the morphology of ZnO nanostructures. • Concentration of zinc and oxygen related defects vary with doping. • Correlation between PL and EPR was established. • Both undoped and doped ZnO nanostructures showed selectivity towards NH{sub 3}. - Abstract: Undoped and transition metal (Cu, Co and Mn) doped ZnO nanostructures were successfully prepared via a microwave-assisted hydrothermal method followed by annealing at 500 °C. Numerous characterization facilities such as X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM) were employed to acquire the structural and morphological information of the prepared ZnO based products. Combination of defect structure analysis based on photoluminescence (PL) and electron paramagnetic resonance (EPR) indicated that co-existing oxygen vacancies (V{sub O}) and zinc interstitials (Zn{sub i}) defects are responsible for the observed ferromagnetism in undoped and transition metal (TM) doped ZnO systems. PL analysis demonstrated that undoped ZnO has more donor defects (V{sub O} and Zn{sub i}) which are beneficial for gas response enhancement. Undoped ZnO based sensor exhibited a higher sensor response to NH{sub 3} gas compared to its counterparts owing to high content of donor defects while transition metal doped sensors showed short response and recovery times compared to undoped ZnO.

  19. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Device quality ZnO grown using a Filtered Cathodic Vacuum Arc

    International Nuclear Information System (INIS)

    Elzwawi, Salim; Kim, Hyung Suk; Heinhold, Robert; Lynam, Max; Turner, Gary; Partridge, Jim G.; McCulloch, Dougal G.

    2012-01-01

    In this paper we report on the structural, electrical and optical characteristics of unintentionally doped ZnO films grown on a-plane sapphire substrates using the Filtered Cathodic Vacuum Arc (FCVA) technique. The resulting films showed considerable promise for device applications with properties including high transparency, moderate intrinsic carrier concentrations (10 17 -10 19 cm -3 ), electron mobilities up to 30 cm 2 /Vs, low surface roughness (typically <2% of film thickness) and well-structured photoluminescence. Post-annealing in oxygen at temperatures up to 800 °C produced significant improvements in the properties of these films. Silver oxide Schottky diodes fabricated on FCVA ZnO showed ideality factors as low as 1.20 and good sensitivity to ultraviolet light.

  1. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  2. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  3. Influence of seed layer treatment on low temperature grown ZnO nanotubes: Performances in dye sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ameen, Sadia [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Akhtar, M. Shaheer [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); New and Renewable Energy Material Development Center (NewREC), Chonbuk National University, Buan-gun, Jeonbuk (Korea, Republic of); Kim, Young Soon [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Yang, O-Bong [School of Semiconductor and Chemical Engineering and Solar Energy Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Shin, Hyung-Shik, E-mail: hsshin@jbnu.ac.k [Energy Materials and Surface Science Laboratory, Solar Energy Research Center, School of Chemical Engineering, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2011-01-01

    Non-aligned and highly densely aligned ZnO nanotube (NTs), synthesized by low temperature solution method were applied as photoanode materials for the fabrication of efficient dye-sensitized solar cells (DSSCs). The crystalline and the morphological analysis revealed that the grown aligned ZnO NTs possessed a typical hexagonal crystal structure of outer and inner diameter {approx}250 nm and {approx}100 nm, respectively. ZnO seeding on FTO substrates is an essential step to achieve the aligned ZnO NTs. A DSSC fabricated with aligned ZnO NTs photoanode achieved high solar-to-electricity conversion efficiency of {approx}2.2% with short circuit current (J{sub SC}) of 5.5 mA/cm{sup 2}, open circuit voltage (V{sub OC}) of 0.65 V and fill factor (FF) of 0.61. Significantly, the aligned ZnO NTs photoanode showed three times improved solar-to-electricity conversion efficiency than DSSC fabricated with non-aligned ZnO NTs. The enhanced performances were credited to the aligned morphology of ZnO NTs which executed the high charge collection and the transfer of electrons at the interfaces of ZnO NTs and electrolyte layer.

  4. Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shijun

    2005-05-15

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

  5. Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment

    Science.gov (United States)

    Li, Yaping; Wang, Hui-Qiong; Chu, Tian-Jian; Li, Yu-Chiuan; Li, Xiaojun; Liao, Xiaxia; Wang, Xiaodan; Zhou, Hua; Kang, Junyong; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zheng, Jin-Cheng

    2018-05-01

    Treatment of ZnO films in a supercritical fluid (SCF) has been reported to improve the performance of devices in which the treated ZnO films are incorporated; however, the mechanism of this improvement remains unclear. In this paper, we study the transformation of the surface morphologies and emission properties of ZnO films before and after SCF treatment, establishing the relationship between the treated and untreated structures and thereby enabling tuning of the catalytic or opto-electronic performance of ZnO films or ZnO-film-based devices. Both undoped and N-doped ZnO nanostructures generated by SCF treatment of films are investigated using techniques to characterize their surface morphology (scanning electron microscopy (SEM) and atomic force microscopy (AFM)) as well as room-temperature photoluminescence (RT-PL) spectroscopy. The water-mixed supercritical CO2 (W-SCCO2) technology was found to form nanostructures in ZnO films through a self-catalyzed process enabled by the Zn-rich conditions in the ZnO films. The W-SCCO2 was also found to promote the inhibition of defect luminescence by introducing -OH groups onto the films. Two models are proposed to explain the effects of the treatment with W-SCCO2. This work demonstrates that the W-SCCO2 technology can be used as an effective tool for the nanodesign and property enhancement of functional metal oxides.

  6. Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methods

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, Gerhard; Anwand, Wolfgang; Grambole, Dieter; Skorupa, Wolfgang [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Dresden (Germany); Egger, Werner; Sperr, Peter [Institut fuer Angewandte Physik und Messtechnik LRT2, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, Universitaet der Bundeswehr, Neubiberg (Germany); Beinik, Igor; Wang, Lin; Teichert, Christian [Institut fuer Physik, Montanuniversitaet Leoben (Austria); Kuriplach, Jan; Lang, Jan [Department of Low Temperature Physics, Charles University, Prague (Czech Republic); Zviagin, Sergei; Cizmar, Erik [Institut Hochfeld-Magnetlabor, Forschungszentrum Dresden-Rossendorf, Dresden (Germany); Ling, Chi Chung; Hsu, Yuk Fan; Xi, Yan Yan; Chen, Xinyi; Djurisic, Aleksandra B. [Department of Physics, University of Hong Kong, Hong Kong (China)

    2009-11-15

    ZnO nanostructures are of special interest for device applications. However, their structural characterization remains an ongoing challenge. This paper reviews recent efforts and latest achievements in this direction. Results comprise PAS in the form of Slow Positron Implantation Spectroscopy (SPIS) and Pulsed Low Energy Positron Lifetime Spectroscopy (PLEPS), Nuclear Reaction Analysis (NRA), Atomic Force Microscopy (AFM), conductive AFM (C-AFM), Nuclear Magnetic Resonance (NMR), Electron Spin Resonance (ESR), Photoluminescence (PL) spectroscopy, and latest theoretical investigations of structure-related and positron properties of selected defects. The fundamental importance of a relationship between fabrication conditions, native defect formation, and resulting optical and electronic properties is demonstrated by getting either inferior (nanorods) or significantly improved (tetrapods) optical properties compared to single crystal samples, depending on the nanostructure fabrication method. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Evolution of Zinc Oxide Nanostructures Grown on Graphene by Ultrasonic Spray Pyrolysis and Its Statistical Growth Modelling

    Science.gov (United States)

    Ali, Amgad Ahmed; Hashim, Abdul Manaf

    2015-11-01

    The evolution of zinc oxide nanostructures grown on graphene by alcohol-assisted ultrasonic spray pyrolysis was investigated. The evolution of structures is strongly depended on pyrolysis parameters, i.e., precursor molarity, precursor flow rate, precursor injection/deposition time, and substrate temperature. Field-effect scanning electron microscope analysis, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscopy were used to investigate the properties of the synthesized nanostructures and to provide evidence for the structural changes according to the changes in the pyrolysis parameters. The optimum parameters to achieve maximum density and well-defined hexagonally shaped nanorods were a precursor molarity of 0.2 M, an injection flow rate of 6 ml/min, an injection time of 10 min, and a substrate temperature of 250-355 °C. Based on the experimental results, the response surface methodology (RSM) was used to model and optimize the independent pyrolysis parameters using the Box-Behnken design. Here, the responses, i.e., the nanostructure density, size, and shape factor, are evaluated. All of the computations were performed using the Design-Expert software package. Analysis of variance (ANOVA) was used to evaluate the results of the model and to determine the significant values for the independent pyrolysis parameters. The evolution of zinc oxide (ZnO) structures are well explained by the developed modelling which confirms that RSM is a reliable tool for the modelling and optimization of the pyrolysis parameters and prediction of nanostructure sizes and shapes.

  8. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  9. Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Heo, Y.W.; Norton, D.P.; Pearton, S.J.

    2005-01-01

    The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy V Zn - ) and the yellow to donor-deep acceptor (oxygen vacancy, O i - )

  10. ZnO nanowall network grown by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Amrita, E-mail: but.then.perhaps@gmail.com; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-06-24

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  11. Influences of Co doping on the structural and optical properties of ZnO nanostructured

    Science.gov (United States)

    Majeed Khan, M. A.; Wasi Khan, M.; Alhoshan, Mansour; Alsalhi, M. S.; Aldwayyan, A. S.

    2010-07-01

    Pure and Co-doped ZnO nanostructured samples have been synthesized by a chemical route. We have studied the structural and optical properties of the samples by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), field-emission transmission electron microscope (FETEM), energy-dispersive X-ray (EDX) analysis and UV-VIS spectroscopy. The XRD patterns show that all the samples are hexagonal wurtzite structures. Changes in crystallite size due to mechanical activation were also determined from X-ray measurements. These results were correlated with changes in particle size followed by SEM and TEM. The average crystallite sizes obtained from XRD were between 20 to 25 nm. The TEM images showed the average particle size of undoped ZnO nanostructure was about 20 nm whereas the smallest average grain size at 3% Co was about 15 nm. Optical parameters such as absorption coefficient ( α), energy band gap ( E g ), the refractive index ( n), and dielectric constants ( σ) have been determined using different methods.

  12. Zn-vacancy related defects in ZnO grown by pulsed laser deposition

    Science.gov (United States)

    Ling, F. C. C.; Luo, C. Q.; Wang, Z. L.; Anwand, W.; Wagner, A.

    2017-02-01

    Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.

  13. Electron irradiation induced deep centers in hydrothermally grown ZnO

    International Nuclear Information System (INIS)

    Fang, Z.-Q.; Claflin, B.; Look, D. C.; Farlow, G. C.

    2007-01-01

    An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ∼10 8 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation energy of 0.24 eV and is possibly related to Li Zn acceptors. However, the electron irradiation introduces a new trap with an activation energy of 0.15 eV, and other traps of energy 0.30 and 0.80 eV, respectively. From a comparison of these results with positron annihilation experiments and density functional theory, we conclude that the 0.15-eV trap may be related to V Zn

  14. Mechanisms of electron transport and recombination in ZnO nanostructures for dye-sensitized solar cells.

    Science.gov (United States)

    Vega-Poot, Alberto G; Macías-Montero, Manuel; Idígoras, Jesus; Borrás, Ana; Barranco, Angel; Gonzalez-Elipe, Agustín R; Lizama-Tzec, Francisco I; Oskam, Gerko; Anta, Juan A

    2014-04-14

    ZnO is an attractive material for applications in dye-sensitized solar cells and related devices. This material has excellent electron-transport properties in the bulk but its electron diffusion coefficient is much smaller in mesoporous films. In this work the electron-transport properties of two different kinds of dye-sensitized ZnO nanostructures are investigated by small-perturbation electrochemical techniques. For nanoparticulate ZnO photoanodes prepared via a wet-chemistry technique, the diffusion coefficient is found to reproduce the typical behavior predicted by the multiple-trapping and the hopping models, with an exponential increase with respect to the applied bias. In contrast, in ZnO nanostructured thin films of controlled texture and crystallinity prepared via a plasma chemical vapor deposition method, the diffusion coefficient is found to be independent of the electrochemical bias. This observation suggests a different transport mechanism not controlled by trapping and electron accumulation. In spite of the quite different transport features, the recombination kinetics, the electron-collection efficiency and the photoconversion efficiency are very similar for both kinds of photoanodes, an observation that indicates that surface properties rather than electron transport is the main efficiency-determining factor in solar cells based on ZnO nanostructured photoanodes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  16. Gold coated metal nanostructures grown by glancing angle deposition and pulsed electroplating

    Science.gov (United States)

    Grüner, Christoph; Reeck, Pascal; Jacobs, Paul-Philipp; Liedtke, Susann; Lotnyk, Andriy; Rauschenbach, Bernd

    2018-05-01

    Nickel based nanostructures are grown by glancing angle deposition (GLAD) on flat and pre-patterned substrates. These fabricated porous thin films were subsequently coated by pulsed electroplating with gold. The morphology and conformity of the gold coating were investigated by scanning electron microscopy and X-ray diffraction. Controlled growth of closed gold layers on the nanostructures could be achieved, while the open-pore structure of the nanosculptured thin films was preserved. Such gold coated nanostructures are a candidate for optical sensing and catalysis applications. The demonstrated method can be applied for numerous material combinations, allowing to provide GLAD thin films with new surface properties.

  17. Functionalized tetrapod-like ZnO nanostructures for plasmid DNA purification, polymerase chain reaction and delivery

    International Nuclear Information System (INIS)

    Nie Leng; Gao Lizeng; Yan Xiyun; Wang Taihong

    2007-01-01

    Functionalized tetrapodal ZnO nanostructures are tested in plasmid DNA experiments (1) as a solid-phase adsorbent for plasmid DNA purification (2) as improving reagents in a polymerase chain reaction (PCR) and (3) as novel carriers for gene delivery. The amino-modification, the tetrapod-like shape of the nanostructure and its high biocompatibility all contribute to measurements showing promise for applications. A sol-gel method is used for silica coating and amino-modification. Plasmid DNA is purified through reversible conjugations of amino-modified ZnO tetrapods with DNA. Also, as additional reagents, functionalized tetrapods are shown to improve the amount of PCR product. For transfection, ZnO tetrapods provide some protection against deoxyribonuclease cleavage of plasmid DNA and deliver plasmid DNA into cells with little cytotoxicity

  18. Formation mechanism of PbTe dendritic nanostructures grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Bae, Sangwoo; Kim, Hyunghoon; Lee, Ho Seong, E-mail: hs.lee@knu.ac.kr

    2017-02-01

    The formation mechanism of PbTe dendritic nanostructures grown at room temperature by electrodeposition in nitric acid electrolytes containing Pb and Te was investigated. Scanning electron microscopy and transmission electron microscopy analyses indicated that the PbTe dendritic nanostructures were composed of triangular-shaped units surrounded by {111} and {110} planes. Because of the interfacial energy anisotropy of the {111} and {110} planes and the difference in the current density gradient, the growth rate in the vertical direction of the (111) basal plane was slower than that in the direction of the tip of the triangular shape, leading to growth in the tip direction. In contrast to the general growth direction of fcc dendrites, namely <100>, the tip direction of the {111} basal plane for our samples was <112>, and the PbTe dendritic nanostructures grew in the tip direction. The angles formed by the main trunk and first branches were regular and approximately 60°, and those between the first and second branches were also approximately 60°. Finally, the nanostructures grew in single-crystalline dendritic form. - Highlights: • PbTe dendrite nanostructures were grown by electrodeposition. • PbTe dendritic nanostructures were composed of triangular-shaped units. • The formation mechanism of PbTe dendrite nanostructures was characterized.

  19. A study on the sensing of NO(sub2) and O(sub2) utilizing ZnO films grown by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2015-07-01

    Full Text Available The present paper addresses the preparation and characterization of ZnO nanostructured thin films obtained using aerosol spray pyrolysis method at different deposition periods. Aiming at understanding the chemical composition, structural...

  20. Effect of reactant concentration on the structural properties of hydrothermally-grown ZnO rods on seed-layer ZnO / polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y. I.; Shin, C. M.; Heo, J. H.; Ryu, H. [Inje University, Gimhae (Korea, Republic of); Lee, W. J. [Dong-Eui University, Busan (Korea, Republic of); Son, C. S. [Silla University, Busan (Korea, Republic of); Choi, H. [Pukyong National University, Busan (Korea, Republic of)

    2011-09-15

    The morphology and the structural properties were studied for zinc-oxide (ZnO) rods hydrothermally grown on seed-layer ZnO/polyethylene terephthalate (PET) substrates at various reactant concentrations. Dissolved solutions with de-ionized water, zinc nitrate hexahydrate (Zn(NO{sub 3}){sub 2}{center_dot}6H{sub 2}O, ZNH) and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}, HMT) were employed as reactants for hydrothermal growth of ZnO. The transparency of the mixtures (ZNH+HMT) with increasing reactant concentration from 0.025 to 0.25 M changed from transparent to translucent to opaque (white colors) due to Zn(OH){sub 2} precipitates. When the concentration was increased, the density of the ZnO rods increased, and the morphology of the ZnO rods changed from a hexagonal flat-end shape to a sharp-end or flake-like structure. The sharp-end rods with increasing concentration from 0.1 to 0.15 M resulted from the etching process at a lower pH condition (less than pH 6) after the ZnO rod growth, and the flake-like structure was due to a high growth rate. The ZnO seed layer might have improved the alignment of ZnO rods and made a high density of ZnO rods. In addition, the structural properties were improved at lower concentrations by inserting a seed layer.

  1. Influence of External Gaseous Environments on the Electrical Properties of ZnO Nanostructures Obtained by a Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Marcin Procek

    2016-11-01

    Full Text Available This paper deals with experimental investigations of ZnO nanostructures, consisting of a mixture of nanoparticles and nanowires, obtained by the chemical (hydrothermal method. The influences of both oxidizing (NO2 and reducing gases (H2, NH3, as well as relative humidity (RH on the physical and chemical properties of ZnO nanostructures were tested. Carrier gas effect on the structure interaction with gases was also tested; experiments were conducted in air and nitrogen (N2 atmospheres. The effect of investigated gases on the resistance of the ZnO nanostructures was tested over a wide range of concentrations at room temperature (RT and at 200 °C. The impact of near- ultraviolet (UV excitation (λ = 390 nm at RT was also studied. These investigations indicated a high response of ZnO nanostructures to small concentrations of NO2. The structure responses to 1 ppm of NO2 amounted to about: 600% in N2/230% in air at 200 °C (in dark conditions and 430% in N2/340% in air at RT (with UV excitation. The response of the structure to the effect of NO2 at 200 °C is more than 105 times greater than the response to NH3, and more than 106 times greater than that to H2 in the relation of 1 ppm. Thus the selectivity of the structure for NO2 is very good. What is more, the selectivity to NO2 at RT with UV excitation increases in comparison at elevated temperature. This paper presents a great potential for practical applications of ZnO nanostructures (including nanoparticles in resistive NO2 sensors.

  2. Nanostructure sword-like ZnO wires: Rapid synthesis and characterization through a microwave-assisted route

    International Nuclear Information System (INIS)

    Kajbafvala, Amir; Shayegh, Mohammad Reza; Mazloumi, Mahyar; Zanganeh, Saeid; Lak, Aidin; Mohajerani, Matin Sadat; Sadrnezhaad, S.K.

    2009-01-01

    Nanostructure sword-like ZnO wires with diameters of about 80-250 nm and the length of ∼1-4 μm have been synthesized by a fast, simple and template-free microwave-assisted method. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) spectroscopy and room temperature photoluminescence (PL) measurements was used for characterization of the as-prepared products. The nanostructure sword-like ZnO wires have high crystallinity with the average crystallite size of about 53 nm and show a UV emission and a visible green band in their PL spectrum. The possible growth mechanism of the nanostructures along the crystallographic direction and subsequent formation of wires were also investigated

  3. Design of Highly Sensitive C2H5OH Sensors Using Self-Assembled ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Jong-Heun Lee

    2011-10-01

    Full Text Available Various ZnO nanostructures such as porous nanorods and two hierarchical structures consisting of porous nanosheets or crystalline nanorods were prepared by the reaction of mixtures of oleic-acid-dissolved ethanol solutions and aqueous dissolved Zn-precursor solutions in the presence of NaOH. All three ZnO nanostructures showed sensitive and selective detection of C2H5OH. In particular, ultra-high responses (Ra/Rg = ~1,200, Ra: resistance in air, Rg: resistance in gas to 100 ppm C2H5OH was attained using porous nanorods and hierarchical structures assembled from porous nanosheets, which is one of the highest values reported in the literature. The gas response and linearity of gas sensors were discussed in relation to the size, surface area, and porosity of the nanostructures.

  4. Influence of ZnO nanostructures in liquid crystal interfaces for bistable switching applications

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Kaushik, E-mail: kaushikpal@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Zhan, Bihong, E-mail: bihong_zhan@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Madhu Mohan, M.L.N. [Liquid Crystal Research Laboratory (LCRL), Bannari Amman Institute of Technology, Sathyamangalam 638 401 (India); Schirhagl, Romana [University Medical Center Groningen, Department of BioMedical Engineering, Ant. Deusinglaan 1, 9713 AV Groningen (Netherlands); Wang, Guoping, E-mail: guopingwang@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China)

    2015-12-01

    Graphical abstract: - Highlights: • One step bench top novel synthesis and growth dynamics of ZnO structures are successfully performed. • Nanostructures dispersing liquid crystals (NDLC) is recently found to have significant influence on the nucleation and growth of many functional nanocrystals (NCs), and provide a fundamental approach to modify the crystallographic phase, size, morphology, and electronic configuration of nanomaterials. • Electro-optical switching application ensures the bright field droplet design marble pattern of smectic G phase, nematic and most significant twist nematic phase pattern are obtained. • Spontaneous polarization, rotational viscosity and response time study, exploring smart applications in LCD technology. - Abstract: The controlled fabrication of nanometer-scale objects is without doubt one of the central issues in current science and technology. In this article, we exhibit a simple, one-step bench top synthesis of zinc oxide nano-tetrapods and nano-spheres which were tailored by the facial growth of nano-wires (diameter ≈ 24 nm; length ≈ 118 nm) and nano-cubes (≈395 nm edge) to nano-sphere (diameter ≈ 585 nm) appeaded. The possibilities of inexpensive, simple solvo-chemical synthesis of nanostructures were considered. In this article, a successful attempt has been made that ZnO nano-structures dispersed on well aligned hydrogen bonded liquid crystals (HBLC) comprising azelaic acid (AC) with p-n-alkyloxy benzoic acid (nBAO) by varying the respective alkyloxy carbon number (n = 5). The dispersion of nanomaterials with HBLC is an effective route to enhance the existing functionalities. A series of these composite materials were analyzed by polarizing optical microscope's electro-optical switching. An interesting feature of AC + nBAO is the inducement of tilted smectic G phase with increasing carbon chain length. Phase diagrams of the above hybrid ZnO nanomaterial influenced LC complex and pure LC were

  5. Ultra-high sensitive hydrazine chemical sensor based on low-temperature grown ZnO nanoparticles

    International Nuclear Information System (INIS)

    Mehta, S.K.; Singh, Kulvinder; Umar, Ahmad; Chaudhary, G.R.; Singh, Sukhjinder

    2012-01-01

    Graphical abstract: Systematic representation of the fabricated amperometric hydrazine chemical sensor based on ZnO NPs/Au modified electrode. Highlights: ► Synthesis of well-crystalline ZnO NPs has been achieved in aqueous solution. ► ZnO NPs act as efficient electron mediators for hydrazine sensor. ► Extremely high sensitivity and low-detection limit have been obtained. - Abstract: Using well-crystalline ZnO nanoparticles (NPs), an ultra high sensitive hydrazine amperometric sensor has been fabricated and reported in this paper. The ZnO NPs have been synthesized by very simple aqueous solution process at 90 °C and characterized in detail in terms of their morphological, compositional, structural and optical properties. The detailed investigations reveal that the synthesized products are well-crystalline NPs, possessing wurtzite hexagonal phase and exhibit good optical properties. The fabricated amperometric hydrazine sensor exhibits ultra-high sensitivity of ∼97.133 μA cm −2 μM −1 and very low-detection limit of 147.54 nM. To the best of our knowledge, this is the first report in which an ultra-high sensitivity and low-detection limit have been obtained for the hydrazine chemical sensor based on ZnO nanostructures.

  6. ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, D.J. [Nanovation SARL, Orsay (France); Technical Univ. of Troyes (France); CNRS, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Largeteau, A.; Demazeau, G. [ICMCB-CNRS, Bordeaux 1 University (Science and Technology), Pessac (France); Moisson, C.; Turover, D. [Novasic, Savoie Technolac, Arche Bat. 4, BP 267, Le Bourget du Lac (France); Nause, J. [Cermet Inc., Atlanta, GA (United States); Garry, G. [Thales Research, Domaine de Corbeville, Orsay (France); Kling, R.; Gruber, T. [Ulm University, Department of Semiconductor Physics, Ulm (Germany); Waag, A. [Braunschweig Technical University, Institute of Semiconductor Technology, Braunschweig (Germany); Jomard, F.; Galtier, P.; Lusson, A. [LPSC-CNRS, Meudon (France); Monteiro, T.; Soares, M.J.; Neves, A.; Carmo, M.C.; Peres, M. [University of Aveiro, Physics Department, Aveiro (Portugal); Lerondel, G.; Hubert, C. [Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, Troyes (France)

    2007-07-15

    2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) {omega} scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Aa. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) {omega} and 2{theta}/{omega} WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2{theta}/{omega} scan. It was suggested that the improvement in XRD response relative to the substrate might be due to ''healing'' of sub-surface polishing damage due to the elevated T{sub s} used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. (orig.)

  7. A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

    Directory of Open Access Journals (Sweden)

    Sibel MORKOÇ KARADENİZ

    2016-11-01

    Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

  8. Synthesis of 1D, 2D, and 3D ZnO Polycrystalline Nanostructures Using the Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Yung-Kuan Tseng

    2012-01-01

    Full Text Available This study employed various polyol solvents to synthesize zinc oxide polycrystalline nanostructures in the form of fibers (1D, rhombic flakes (2D, and spheres (3D. The synthetic process primarily involved the use of zinc acetate dihydrate in polyol solutions, which were used to derive precursors of zinc alkoxides. Following hydrolysis at 160°C, the zinc alkoxide particles self-assembled into polycrystalline nanostructures with different morphologies. Following calcination at 500°C for 1 h, polycrystalline ZnO with good crystallinity was obtained. FE-SEM explored variations in surface morphology; XRD was used to analyze the crystalline structures and crystallinity of the products, which were confirmed as ZnO wurtzite structures. FE-TEM verified that the ZnO nanostructures were polycrystalline. Furthermore, we employed TGA/DSC to observe the phase transition. According to the results of property analyses, we proposed models of the relevant formation mechanisms. Finally, various ZnO structures were applied in the degradation of methylene blue to compare their photocatalytic efficiency.

  9. Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

    International Nuclear Information System (INIS)

    Pan, C.-J.; Hsu, H.-C.; Cheng, H.-M.; Wu, C.-Y.; Hsieh, W.-F.

    2007-01-01

    ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn 1 -x Mg x O alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn 2+ ions are successfully substituted by Mg 2+ ions in the ZnO lattice. In Raman-scattering studies, the change of E 2 (high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm -1 are presumably attributed to the Mg-related vibrational modes. - Graphical abstract: We reported the synthesis of the ZnMgO nanostructures prepared by a simple vapor transport method. Magnesium-related anomalous modes are observed by Raman spectra for the first time in ZnMgO system

  10. Studies on the adsorption of RuN{sub 3} dye on sheet-like nanostructured porous ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Rong; Pan, Jie; Briggs, Evan P.; Thrash, Marvin; Kerr, Lei L. [Department of Paper and Chemical Engineering, Miami University, Oxford, OH 45056 (United States)

    2008-04-15

    The interface between the ZnO and dye directly impacts the dye-sensitized solar cell (DSSC) performance. Nanostructured porous ZnO film was developed by a simple chemical solution process. Scanning electron microscope (SEM) images demonstrated the uniform ZnO films with sheet-like nanostructure. Adsorption studies indicated that the maximum adsorption capacity of RuN{sub 3} dye on the surface of ZnO films was approximately 0.016 mmol RuN{sub 3}/g ZnO films. Adsorption studies were conducted at 25 and 40 C. The results showed that the dye adsorption was significantly influenced by temperatures. Moreover, the problem of the dye aggregation on the ZnO surface was reduced at higher adsorption temperatures. The adsorption chemistry was studied with Raman spectroscopy. (author)

  11. Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

    International Nuclear Information System (INIS)

    Fay, Sylvie; Steinhauser, Jerome; Nicolay, Sylvain; Ballif, Christophe

    2010-01-01

    Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contacting such devices. IMT-EPFL has developed an in-house LPCVD process for the deposition of nanotextured boron doped ZnO films used as rough TCO for TF Si solar cells. This paper is a general review and synthesis of the study of the electrical, optical and structural properties of the ZnO:B that has been performed at IMT-EPFL. The influence of the free carrier absorption and the grain size on the electrical and optical properties of LPCVD ZnO:B is discussed. Transport mechanisms at grain boundaries are studied. It is seen that high doping of the ZnO grains facilitates the tunnelling of the electrons through potential barriers that are located at the grain boundaries. Therefore, even if these potential barriers increase after an exposition of the film to a humid atmosphere, the heavily doped LPCVD ZnO:B layers show a remarkable stable conductivity. However, the introduction of diborane in the CVD reaction induces also a degradation of the intra-grain mobility and increases over-proportionally the optical absorption of the ZnO:B films. Hence, the necessity to finely tune the doping level of LPCVD ZnO:B films is highlighted. Finally, the next challenges to push further the optimization of LPCVD ZnO:B films for thin film silicon solar cells are discussed, as well as some remarkable record cell results achieved with LPCVD ZnO:B as front electrode.

  12. Morphology evolution of hierarchical ZnO nanostructures modulated by supersaturation and growth temperature

    Science.gov (United States)

    Yan, Youguo; Zhou, Lixia; Yu, Lianqing; Zhang, Ye

    2008-07-01

    Three kinds of ZnO hierarchical structures, nanocombs with tube- and needle-shaped teeth and hierarchical nanorod arrays, were successfully synthesized through the chemical vapor deposition method. Combining the experimental parameters, the microcosmic growing conditions (growth temperature and supersaturation) along the flux was discussed at length, and, based on the conclusions, three reasonable growth processes were proposed. The results and discussions were beneficial to further realize the relation between the growing behavior of the nanomaterial and microcosmic conditions, and the hierarchical nanostructures obtained were also expected to have potential applications as functional blocks in future nanodevices. Furthermore, the study of photoluminescence further indicated that the physical properties were strongly dependent on the crystal structure.

  13. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  14. Electromagnetic and Microwave Absorption Properties of Carbonyl Tetrapod-Shaped Zno Nanostructures Composite Coatings

    Science.gov (United States)

    Yu, Haibo; Qin, Hui; Huang, Yunhua

    2012-08-01

    CIP/T-ZnO/EP composite coatings with carbonyl iron powders (CIP) and tetrapodshaped ZnO (T-ZnO) nanostructures as absorbers, and epoxy resin (EP) as matrix were prepared. The complex permittivity, permeability and microwave absorption properties of the coatings were investigated in the frequency range of 2-18 GHz. The effects of the weight ratio (CIP/T-ZnO/EP), the thickness and the solidification temperature on microwave absorption properties were discussed. When the weight ratio (CIP/TZnO/ EP), the thickness and the solidification temperature is 28:2:22, 1.8 mm, and 10°C, respectively, the optimal wave absorption with the minimum reflection loss (RL) value of -22.38 dB at 15.67 GHz and the bandwidth (RLcoatings may have a promising application in Ku-band (12-18 GHz).

  15. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  16. Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

    International Nuclear Information System (INIS)

    Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

    2007-01-01

    Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

  17. Effects of annealing on the recombination dynamics of low-temperature grown ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Hilker, B.; Bekeny, C.; Voss, T.; Gutowski, J. [IFP, Universitaet Bremen, 28334 Bremen (Germany); Hauschild, R.; Kalt, H. [Universitaet Karlsruhe, 76128 Karlsruhe (Germany); Postels, B.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, 38023 Braunschweig (Germany)

    2007-07-01

    We present systematic temperature and excitation density dependent time-resolved photoluminescence (TRPL) measurements of as-grown and annealed ZnO nanorods fabricated by an aqueous chemical growth (ACG) technique at {proportional_to}90 C. The as-grown nanorods show strong nearband-edge and rather weak deep-level emission indicating their already good optical quality. At 4K, we find a broad emission line at 3.36 eV (line width 30 meV) which we attribute to recombination from a donor band formed through the high donor concentration. After annealing in oxygen and nitrogen atmospheres at 600-800 C well-resolved and sharper excitonic transitions are observed. To understand the recombination dynamics in the nanorods we carried out TRPL measurements using a frequency-doubled femtosecond laser and a streak camera. The as-grown sample shows a very fast monoexponential decay time of {proportional_to}10ps independent of temperature and excitation density. In contrast, the annealed samples exhibit a biexponential decay. Each a fast {tau}1 and a slow {tau}2 time constant have been determined for all annealed samples both of them significantly varying depending on the annealing atmosphere and temperature. This will be discussed on the basis of a phenomenological rate-equation model.

  18. Photoelectrochemical study of nanostructured ZnO thin films for hydrogen generation from water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Wolcott, Abraham; Zhang, Jin Z. [Department of Chemistry and Biochemistry, University of California, Santa Cruz 1156 High St. Santa Cruz, CA 95064 (United States); Smith, Wilson A.; Zhao, Yiping [Department of Physics and Astronomy, University of Georgia, Athens, GA 30602 (United States); Kuykendall, Tevye R. [Department of Chemistry, University of California, Berkeley Berkeley, CA 94720 (United States)

    2009-06-23

    Photoelectrochemical cells based on traditional and nanostructured ZnO thin films are investigated for hydrogen generation from water splitting. The ZnO thin films are fabricated using three different deposition geometries: normal pulsed laser deposition, pulsed laser oblique-angle deposition, and electron-beam glancing-angle deposition. The nanostructured films are characterized by scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and photoelectrochemical techniques. Normal pulsed laser deposition produces dense thin films with ca. 200 nm grain sizes, while oblique-angle deposition produces nanoplatelets with a fishscale morphology and individual features measuring ca. 900 by 450 nm on average. In contrast, glancing-angle deposition generates a highly porous, interconnected network of spherical nanoparticles of 15-40 nm diameter. Mott-Schottky plots show the flat band potential of pulsed laser deposition, oblique-angle deposition, and glancing-angle deposition samples to be -0.29, -0.28 and +0.20 V, respectively. Generation of photocurrent is observed at anodic potentials and no limiting photocurrents were observed with applied potentials up to 1.3 V for all photoelectrochemical cells. The effective photon-to-hydrogen efficiency is found to be 0.1%, 0.2% and 0.6% for pulsed laser deposition, oblique-angle deposition and glancing-angle deposition samples, respectively. The photoelectrochemical properties of the three types of films are understood to be a function of porosity, crystal defect concentration, charge transport properties and space charge layer characteristics. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  19. Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Yu-Feng Yao

    2014-01-01

    Full Text Available The void structures and related optical properties after thermal annealing with ambient oxygen in regularly patterned ZnO nanrorod (NR arrays grown with the hydrothermal method are studied. In increasing the thermal annealing temperature, void distribution starts from the bottom and extends to the top of an NR in the vertical (c-axis growth region. When the annealing temperature is higher than 400°C, void distribution spreads into the lateral (m-axis growth region. Photoluminescence measurement shows that the ZnO band-edge emission, in contrast to defect emission in the yellow-red range, is the strongest under the n-ZnO NR process conditions of 0.003 M in Ga-doping concentration and 300°C in thermal annealing temperature with ambient oxygen. Energy dispersive X-ray spectroscopy data indicate that the concentration of hydroxyl groups in the vertical growth region is significantly higher than that in the lateral growth region. During thermal annealing, hydroxyl groups are desorbed from the NR leaving anion vacancies for reacting with cation vacancies to form voids.

  20. Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

    Science.gov (United States)

    Barbagiovanni, E. G.; Strano, V.; Franzò, G.; Crupi, I.; Mirabella, S.

    2015-03-01

    Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O2 on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

  1. Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Kopach, V. R.; Klepikova, K. S.; Klochko, N. P., E-mail: klochko-np@mail.ru; Khrypunov, G. S.; Korsun, V. E.; Lyubov, V. M.; Kirichenko, M. V.; Kopach, A. V. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine)

    2017-03-15

    We investigate the structure, surface morphology, and optical properties of nanostructured ZnO arrays fabricated by pulsed electrodeposition, Ag nanoparticles precipitated from colloidal solutions, and a ZnO/Ag nanocomposite based on them. The electronic and electrical parameters of the ZnO arrays and ZnO/Ag nanocomposites are analyzed by studying the I–V and C–V characteristics. Optimal modes for fabricating the ZnO/Ag heterostructures with the high stability and sensitivity to ultraviolet radiation as promising materials for use in photodetectors, gas sensors, and photocatalysts are determined.

  2. Multifunctional ZnO interfaces with hierarchical micro- and nanostructures: bio-inspiration from the compound eyes of butterflies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Sha; Yang, Yefeng; Jin, Yizheng; Huang, Jingyun; Zhao, Binghui; Ye, Zhizhen [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China)

    2010-07-15

    Multifunctional zinc oxide (ZnO) interfaces were fabricated by utilizing the technique of low-temperature metal-organic chemical vapor deposition (MOCVD). The ZnO interfacial material exhibit antiwetting, antireflectance, and photonic properties derived from the unique hierarchical micro- and nanostructures of the compound eye of the butterflies. We demonstrate that the fabrication of the multifunctional interfaces by using biotemplates can be applied to other materials, such as Pt. Our study provides an excellent example to obtain multifunctional interfaces by learning from nature. (orig.)

  3. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Oluwafemi, O.S.; Dangbegnon, J.K.; Botha, J.R.

    2012-01-01

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 °C is hereby reported. By annealing in O 2 environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  4. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Dangbegnon, J.K. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R., E-mail: Reinhardt.Botha@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 Degree-Sign C is hereby reported. By annealing in O{sub 2} environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  5. Decoration of ZnO Nanorods with Coral Reefs like NiO Nanostructures by the Hydrothermal Growth Method and Their Luminescence Study

    Directory of Open Access Journals (Sweden)

    Mazhar Ali Abbasi

    2014-01-01

    Full Text Available Composite nanostructures of coral reefs like p-type NiO/n-type ZnO were synthesized on fluorine-doped tin oxide glass substrates by hydrothermal growth. Structural characterization was performed by field emission scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray diffraction techniques. This investigation shows that the adopted synthesis leads to high crystalline quality nanostructures. The morphological study shows that the coral reefs like nanostructures are densely packed on the ZnO nanorods. Cathodoluminescence (CL spectra for the synthesized composite nanostructures are dominated mainly by a broad interstitial defect related luminescence centered at ~630 nm. Spatially resolved CL images reveal that the luminescence of the decorated ZnO nanostructures is enhanced by the presence of the NiO.

  6. Probing defects in ZnO nanostructures by Photoluminescence and Positron Annihilation Spectroscopy

    Science.gov (United States)

    Ghosh, Manoranjan; Raychaudhuri, A. K.; Chaudhuri, S. K.; Das, Dipankar

    2008-03-01

    We have investigated defect related emission in the blue green region (2.2 eV -- 2.5 eV) of ZnO nanostructures having spherical (5 nm-15 nm) as well as those with hexagonal platelet and rod like morphologies (20nm-100 nm), synthesized by solvo-thermal route. This emission show anomalous size dependence. Emission energy near 2.2 eV, shifts to higher energy (2.5 eV) for increase in size beyond 20nm when shape of the nanostructures changes. This change in photoluminescence has a close correlation with the size (and shape) induced change in the positron trapping rate which is directly proportional to the defect concentration. The trapping rates show non-monotonous dependence on size. It increases initially as the size increases (5nm-15nm) and then decreases as the size increases beyond 20nm. While increase of the trapping rate on size reduction is expected due to accumulation of more defects at the surface, the initial dependence of the trapping rate on the size (below 20nm) is anomalous. The data are explained by the presence of defects like Zn vacancy and confinement due to size reduction.

  7. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  8. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    International Nuclear Information System (INIS)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D.

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z 1 ) and nanograins by SILAR (Z 2 ). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10 2 Ω cm) is lower than that of SILAR deposited films (10 5 Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method

  9. MBE-grown semiconductor nanostructures with electronic and photonic confinement

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis

    In this thesis the realization of semiconductor nanostructures in the InAlGaAs material system with molecular beam epitaxy (MBE) is described, as well as the characterization of their optical properties. First, the growth conditions used for different materials and surfaces are given, and the gen...... a microcavity is measured and analysed, where a good qualitative agreement with theories for Rayleigh scattering is found, ant he so-called polariton bottleneck is observed....... well is also taken into account, which is demonstrated in a microcavity with a reduced light-matter interaction. For the polariton with the lowest eigenenergy, it is shown that the probability for scattering on lattice vibrations or free carriers is reduced. Finally, the secondary emission from...

  10. Iron (III Ion Sensor Based on the Seedless Grown ZnO Nanorods in 3 Dimensions Using Nickel Foam Substrate

    Directory of Open Access Journals (Sweden)

    Mazhar Ali Abbasi

    2013-01-01

    Full Text Available In the present work, the seedless, highly aligned and vertical ZnO nanorods in 3 dimensions (3D were grown on the nickel foam substrate. The seedless grown ZnO nanorods were characterised by field emission scanning electron microscopy (FESEM, high resolution transmission electron microscopy (HRTEM, and X-ray diffraction (XRD techniques. The characterised seedless ZnO nanorods in 3D on nickel foam were highly dense, perpendicular to substrate, grown along the (002 crystal plane, and also composed of single crystal. In addition to this, these seedless ZnO nanorods were functionalized with trans-dinitro-dibenzo-18-6 crown ether, a selective iron (III ion ionophore, along with other components of membrane composition such as polyvinyl chloride (PVC, 2-nitopentylphenyl ether as plasticizer (NPPE, and tetrabutyl ammonium tetraphenylborate (TBATPB as conductivity increaser. The sensor electrode has shown high linearity with a wide range of detection of iron (III ion concentrations from 0.005 mM to 100 mM. The low limit of detection of the proposed ion selective electrode was found to be 0.001 mM. The proposed sensor also described high storage stability, selectivity, reproducibility, and repeatability and a quick response time of less than 10 s.

  11. Photoluminescence of Hexagonal ZnO Nanorods Hydrothermally Grown on Zn Foils in KOH Solutions with Different Values of Basicity

    Directory of Open Access Journals (Sweden)

    Nuengruethai Ekthammathat

    2013-01-01

    Full Text Available Aligned hexagonal ZnO nanorods on pure Zn foils were hydrothermally synthesized in 30 mL solutions containing 0.05–0.50 g KOH. The products were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, and photoluminescence (PL spectroscopy. In this research, wurtzite hexagonal ZnO nanorods grown along the [002] direction with green light emission at 541 nm caused by singly ionized oxygen vacancies inside were detected.

  12. Optical and Morphological Properties of ZnO- and TiO2-Derived Nanostructures Synthesized via a Microwave-Assisted Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Nosipho Moloto

    2012-01-01

    Full Text Available A microwave-assisted hydrothermal method was used to synthesize ZnO and TiO2 nanostructures. The experimental results show that the method resulted in crystalline monodispersed ZnO nanorods that have pointed tips with hexagonal crystal phase. TiO2 nanotubes were also formed with minimum bundles. The mechanism for the formation of the tubes was validated by HRTEM results. The optical properties of both ZnO and TiO2 nanostructures showed characteristics of strong quantum confinement regime. The photoluminescence spectrum of TiO2 nanotubes shows good improvement from previously reported data.

  13. Effect of co-doping process on topography, optical and electrical properties of ZnO nanostructured

    Science.gov (United States)

    Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Syamsir, S. A.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    We investigated of Undoped ZnO and Magnesium (Mg)-Aluminium (Al) co-doped Zinc Oxide (MAZO) nanostructured films were prepared by sol gel spin coating technique. The surface topography was analyzed using Atomic Force Microscopy (AFM). Based on the AFM results, Root Mean Square (RMS) of MAZO films have rougher surface compared to pure ZnO films. The optical and electrical properties of thin film samples were characterized using Uv-Vis spectroscopy and two point probes, current-voltage (I-V) measurements. The transmittance spectra for both thin samples was above 80% in the visible wavelength. The MAZO film shows the highest conductivity compared to pure ZnO films. This result indicates that the improvement of carrier mobility throughout doping process and possibly contribute by extra ion charge.

  14. Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2011-10-01

    Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

  15. Acoustoelectric Effect on the Responses of SAW Sensors Coated with Electrospun ZnO Nanostructured Thin Film

    Directory of Open Access Journals (Sweden)

    Zafer Ziya Ozturk

    2012-08-01

    Full Text Available In this study, zinc oxide (ZnO was a very good candidate for improving the sensitivity of gas sensor technology. The preparation of an electrospun ZnO nanostructured thin film on a 433 MHz Rayleigh wave based Surface Acoustic Wave (SAW sensor and the investigation of the acoustoelectric effect on the responses of the SAW sensor are reported. We prepared an electrospun ZnO nanostructured thin film on the SAW devices by using an electrospray technique. To investigate the dependency of the sensor response on the structure and the number of the ZnO nanoparticles, SAW sensors were prepared with different coating loads. The coating frequency shifts were adjusted to fall between 100 kHz and 2.4 MHz. The sensor measurements were performed against VOCs such as acetone, trichloroethylene, chloroform, ethanol, n-propanol and methanol vapor. The sensor responses of n-propanol have opposite characteristics to the other VOCs, and we attributed these characteristics to the elastic effect/acoustoelectric effect.

  16. On the possibility of room temperature ferromagnetism on chunk-shape BaSnO3/ZnO core/shell nanostructures

    Science.gov (United States)

    Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Core/shell BaSnO3/ZnO (BS-ZO) nanostructures were prepared by oxalate precipitation method and wet-chemical method. BaSnO3 (BSO) cubic perovskite structure and ZnO hexagonal wurtzite structure were confirmed by X-ray diffraction (XRD). The crystallite sizes is 23 nm, 29 nm and 27 nm for BSO, ZnO and BS-ZO, respectively. Chunk-shape and cuboids morphology observed from scanning electron microscopy (SEM) analysis. The magnetic properties were studied by VSM for bare and core-shell nano systems and the room temperature ferromagnetism observed for core-shell nanostructures. The BSO/ZnO shows enhanced coercivity and saturated magnetization as compared with BSO and ZnO nanostructures.

  17. Superhydrophobic ZnAl double hydroxide nanostructures and ZnO films on Al and glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    De, Debasis, E-mail: debasis.de@bcrec.ac.in [Electronics and Instrumentation Engineering Department, Dr. B C Roy Engineering College, Durgapur, West Bengal 713206 (India); Sarkar, D.K. [Centre Universitaire de Recherche sur l' Aluminium (CURAL), L' Université du Québec à Chicoutimi, 555 Blvd. Université, Chicoutimi, Saguenay, Québec G7H 2B1 (Canada)

    2017-01-01

    Superhydrophobic nanostructured ZnAl: layered double hydroxides (LDHs) and ZnO films have been fabricated on Al and glass substrates, respectively, by a simple and cost effective chemical bath deposition technique. Randomly oriented hexagonal patterned of ZnAl: LDHs thin nanoplates are clearly observed on Al-substrate in the scanning electron microscopic images. The average size of these hexagonal plates is ∼4 μm side and ∼30 nm of thickness. While on the glass substrate, a oriented hexagonal patterned ZnO nanorods (height ∼5 μm and 1 μm diameter) are observed and each rod is further decorated throughout the top few nanometers with several nanosteps. At the top of the nanorod, a perfectly hexagonal patterned ZnO surface with ∼250 nm sides is observed. The tendency to form hexagonal morphological features is due to the hexagonal crystal structure of ZnO confirmed from X-ray diffraction patterns and transmission electron microscopy image. The ZnAl: LDHs and/or ZnO coated substrates have been passivated by using stearic acid (SA) molecules. Infrared spectra of passivated ZnAl: LDHs coated substrates confirm the presence of SA. X-ray diffraction pattern also corroborates the results of infrared spectrum. The contact angle of the as prepared samples is zero. The superhydrophobicity is achieved by observing contact angle of ∼161° with a hysteresis of ∼4° for Al-substrate. On the glass substrate, a higher contact angle of ∼168° with a lower hysteresis of ∼3° is observed. A lower surface roughness of ∼4.93 μm is measured on ZnAl: LDHs surface layer on the Al substrate as compare to a higher surface roughness of 6.87 μm measured on ZnO layer on glass substrate. The superhydrophobicity of passivated nanostructured films on two different substrates is observed due to high surface roughness and low surface energy. - Highlights: • ZnAl: layered double hydroxides (LDHs) nanoplates are fabricated on Al substrate. • ZnO nanorods are fabricated on

  18. Doping properties of ZnO thin films for photovoltaic devices grown by URT-IP (ion plating) method

    International Nuclear Information System (INIS)

    Iwata, K.; Sakemi, T.; Yamada, A.; Fons, P.; Awai, K.; Yamamoto, T.; Matsubara, M.; Tampo, H.; Sakurai, K.; Ishizuka, S.; Niki, S.

    2004-01-01

    The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga 2 O 3 content ZnO target

  19. MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

    Science.gov (United States)

    Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

    2018-06-01

    We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

  20. Characteristics of ZnO nanostructures produced with [DMIm]BF{sub 4} using ultrasonic radiation

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, I. B. Abdul; Ayob, M. T. M.; Ishak, I. S.; Mohd Lawi, R. L.; Isahak, W. N. R. W.; Hamid, M. H. N. Abd; Othman, N. K.; Radiman, S. [School of Applied Physics, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); School of Chemistry and Food Technology, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); School of Applied Physics, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia)

    2012-11-27

    Great interests in metallic oxides have emerged because of the promising properties of these materials for various applications such as solar cells and sensors. ZnO nanostructures with different morphologies were successfully synthesized from Zn(CH{sub 3}COO){sub 2} Bullet 2H{sub 2}O, NaOH and room temperature ionic liquid (RTIL) 1-decyl-3-methylimidazolium tetrafluoroborate, [DMIm][BF{sub 4}] with ultrasound irradiation. Parameters such as the effect of sonication time (30, 60 and 90 minutes) and Zn(Ac){sub 2} precursor to [DMIm][BF{sub 4}] ratios of 3:5, 5:5 and 5:3 were investigated. X-ray diffraction patterns revealed that the ZnO nanocrystals were hexagonal zincite crystalline in structure. The band gap energies (E{sub g}) were estimated to be 3.35-3.55 eV from the UV-Visible spectrum. The solution with the highest ratio of Zn was analysed with photoluminescence spectroscopy, which exhibited peaks at 362, 403, 468 and 539 nm, at room temperature. The micrographs of field emission scanning electron microscopy and transmission electron microscopy showed that the synthesis products were spherical (30-60 nm), spindle ({approx}10 Multiplication-Sign 70 nm for width Multiplication-Sign length) and whisker-like (100-200 nm), with their dimensions decreasing systematically with increased sonication time. Chemical compositions were approximated at 1:1 for Zn and O, estimated by electron dispersive x-ray spectrum.

  1. Low-temperature synthesis of rose-like ZnO nanostructures using surfactin and their photocatalytic activity.

    Science.gov (United States)

    Reddy, A Satyanarayana; Kuo, Yi-Hao; Atla, Shashi B; Chen, Chien-Yen; Chen, Chien-Cheng; Shih, Ruey-Chyuan; Chang, Young-Fo; Maity, Jyoti Prakash; Chen, How-Ji

    2011-06-01

    Rose-like ZnO nanostructures were synthesized by the precipitation method using a biosurfactant (surfactin) as a templating-agent stabilizer. The concentration of surfactin in the precursor solution significantly influenced the thickness and density of the petals in the rose-like structures, and all samples were of a wurtzite phase. The thickness of the petal was found to decrease with increasing surfactin concentration. The average thickness of the petals was found to be between 10 and 13 nm. Photocatalytic degradation of methylene blue using rose-like ZnO nanostuctures was investigated, and the morphology, density and thickness of the ZnO petals were found to influence the photodegradation activity. The samples with loosely-spread petals, or plate-like ZnO structures, brought about the strongest photodegradation in comparison with the dense rose-like structures. The greater activity of the loose-petal structures was correlated with their higher absorption in the UV region in comparison with the other samples. The ZnO samples prepared using low surfactin concentrations had higher rate constant values, i.e., 9.1 x 10(-3) min(-1), which revealed that the photodegradation of methylene blue under UV irradiation progressed by a pseudo first-order kinetic reaction.

  2. Eosin Yellowish Dye-Sensitized ZnO Nanostructure-Based Solar Cells Employing Solid PEO Redox Couple Electrolyte

    Directory of Open Access Journals (Sweden)

    S. S. Kanmani

    2012-01-01

    Full Text Available ZnO nanostructures are synthesized by low-temperature methods, and they possess polycrystalline hexagonal wurtzite structure with preferential c-axial growth. Morphological study by SEM shows the presence of ~30 nm sized spherical-shaped ZnO nanoparticle, the branched flower-like ZnO composed of many nanorods (length: 1.2 to 4.2 μm and diameter: 0.3 to 0.4 μm, and ~50 nm diameter of individual ZnO nanorods. Reduction in photoemission intensity of nanorods infers the decrease in electron-hole recombination rate, which offers better photovoltaic performance. The dye-sensitized solar cell (DSSC based on ZnO nanorods sensitized with Eosin yellowish dye exhibits a maximum optimal energy conversion efficiency of 0.163% compared to that of nanoparticles and nanoflowers, due to better dye loading and direct conduction pathway for electron transport.

  3. Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

    Science.gov (United States)

    Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

    2017-08-01

    In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

  4. Visible and UV photo-detection in ZnO nanostructured thin films via simple tuning of solution method.

    Science.gov (United States)

    Khokhra, Richa; Bharti, Bandna; Lee, Heung-No; Kumar, Rajesh

    2017-11-08

    This study demonstrates significant visible light photo-detection capability of pristine ZnO nanostructure thin films possessing substantially high percentage of oxygen vacancies [Formula: see text] and zinc interstitials [Formula: see text], introduced by simple tuning of economical solution method. The demonstrated visible light photo-detection capability, in addition to the inherent UV light detection ability of ZnO, shows great dependency of [Formula: see text] and [Formula: see text] with the nanostructure morphology. The dependency was evaluated by analyzing the presence/percentage of [Formula: see text] and [Formula: see text] using photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) measurements. Morphologies of ZnO viz. nanoparticles (NPs), nanosheets (NSs) and nanoflowers (NFs), as a result of tuning of synthesis method contended different concentrations of defects, demonstrated different photo-detection capabilities in the form of a thin film photodetector. The photo-detection capability was investigated under different light excitations (UV; 380~420 nm, white ; λ > 420 nm and green; 490~570 nm). The as fabricated NSs photodetector possessing comparatively intermediate percentage of [Formula: see text] ~ 47.7% and [Formula: see text] ~ 13.8% exhibited superior performance than that of NPs and NFs photodetectors, and ever reported photodetectors fabricated by using pristine ZnO nanostructures in thin film architecture. The adopted low cost and simplest approach makes the pristine ZnO-NSs applicable for wide-wavelength applications in optoelectronic devices.

  5. Facile solvothermal synthesis of abnormal growth of one-dimensional ZnO nanostructures by ring-opening reaction of polyvinylpyrrolidone

    Energy Technology Data Exchange (ETDEWEB)

    Xu, G., E-mail: gxu@alum.imr.ac.cn; Wang, X.L.; Liu, G.Z.

    2015-02-28

    Graphical abstract: - Highlights: • Facile solvothermal synthesis of ZnO nanostructures in super high alkaline alcoholic condition. • The exact role and chemical transformations of PVP in solvothermal synthesis of ZnO nanostructures was revealed. • Mechanism of abnormal growth of ZnO nanopyramids was proposed based on ring-opening reaction of PVP. - Abstract: Abnormal growth of one-dimensional (1-D) ZnO nanostructures (NSs) have been accomplished with the assistance of polyvinylpyrrolidone (PVP) under a super high alkaline alcoholic solvothermal condition. The products were characterized by transmission electron microscopy (TEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and proton nuclear magnetic resonance ({sup 1}H NMR) spectroscopy. The effect of synthetic conditions, such as reaction temperature and the addition of PVP, on the morphologies of ZnO products were investigated. The results show that PVP molecules had the significant role in the transformation of morphologies of ZnO NSs ranging from nanorods, nanoparticles to pyramids, as well as flower-like assembly features. The possible growth mechanism of ZnO pyramids was proposed based on ring-opening reaction of PVP.

  6. Blue-emitting photoluminescence of rod-like and needle-like ZnO nanostructures formed by hot-water treatment of sol–gel derived coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Wai Kian, E-mail: tanwaikian@cie.ignite.tut.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Kawamura, Go; Muto, Hiroyuki [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Abdul Razak, Khairunisak; Lockman, Zainovia [School of Materials and Mineral Resources, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Pulau Pinang 14300 Malaysia (Malaysia); Matsuda, Atsunori, E-mail: matsuda@tut.ee.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan)

    2015-02-15

    The morphological evolution of the zinc oxide (ZnO) nanostructures generated by hot-water treatment (HWT) of sol–gel derived coatings as a function of temperature from 30 to 90 °C was investigated. With increasing HWT temperature, the ZnO crystals evolved from nanoparticles to rod-like and needle-like nanostructures. High-resolution transmission electron microscope observations of rod-like and needle-like nanostructures generated at 60 and 90 °C indicated single crystal ZnO wurtzite structure was obtained. All the hot-water treated samples exhibited blue emission at approximately 440 nm in room temperature. The intensity of blue emission increased with higher HWT temperatures. The unique photoluminescence emission characteristic remained even after heat-treatment at 400 °C for 1 h. As the emission peak obtained in our work is approximately 440 nm (2.82 eV), the emission peak is corresponding to the electron transition from the interstitial Zn to the top of valence band. This facile formation of blue-emitting ZnO nanostructures at low-temperature can be utilized on substrate with low thermal stability for optoelectronic applications such as light emitting devices and biological fluorescence labeling. - Highlights: • Facile and novel formation of ZnO nanostructures by low temperature hot-water treatment. • No catalyst or inhibitor is used. • Evolution of ZnO nanostructures formation as a function of temperature is reported. • Dominant blue emissions are observed from the as-formed and annealed ZnO films. • Ultraviolet and visible emissions are observed for hot-water treated films.

  7. Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Alver, U., E-mail: alver@ksu.edu.tr [Department of Physics, Kahramanmaras Sutcu Imam University, K. Maras 46100 (Turkey); Zhou, W.; Belay, A.B. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States); Krueger, R. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Davis, K.O.; Hickman, N.S. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States)

    2012-01-15

    ZnO nanorods were grown on graphene oxide (GO) and reduced graphene oxide (RGO) films with seed layers by using simple hydrothermal method. The GO films were deposited by spray coating and then annealed at 400 Degree-Sign C in argon atmosphere to obtain RGO films. The optical and structural properties of the ZnO nanorods were systematically studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible spectroscopy. The XRD patterns and SEM images show that without a seed layer, no ZnO nanorod deposition occurs on GO or RGO films. Transmittance of ZnO nanorods grown on RGO films was measured to be approximately 83% at 550 nm. Furthermore, while transmittance of RGO films increases with ZnO nanorod deposition, transmittance of GO decreases.

  8. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Energy Technology Data Exchange (ETDEWEB)

    Loukanov, Alexandre, E-mail: loukanov@mail.saitama-u.ac.jp [Saitama University, Department of Chemistry, Faculty of Science (Japan); Filipov, Chavdar [University of Forestry, Department of Infectious pathology, hygiene, technology and control of food stuffs of animal origin, Faculty of Veterinary Medicine (Bulgaria); Valcheva, Violeta [Bulgarian Academy of Science, Department of Infectious Diseases, Institute of microbiology (Bulgaria); Lecheva, Marta [University of Mining and Geology “St. Ivan Rilski”, Laboratory of Engineering NanoBiotechnology, Department of Engineering Geoecology (Bulgaria); Emin, Saim [University of Nova Gorica, Materials Research Laboratory (Slovenia)

    2015-04-15

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  9. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    International Nuclear Information System (INIS)

    Loukanov, Alexandre; Filipov, Chavdar; Valcheva, Violeta; Lecheva, Marta; Emin, Saim

    2015-01-01

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications

  10. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Science.gov (United States)

    Loukanov, Alexandre; Filipov, Chavdar; Valcheva, Violeta; Lecheva, Marta; Emin, Saim

    2015-04-01

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600-1000 nm). They have been prepared by using both wet sol-gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  11. Effects of the aspect ratio on the dye adsorption of ZnO nanorods grown by using a sonochemical method for dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Choi, Seok Cheol; Yun, Won Suk; Sohn, Sang Ho; Oh, Sang Jin

    2012-01-01

    Well-aligned ZnO nanorods for the photoelectrode of dye-sensitized solar cells (DSSCs) were grown via a sonochemical method, and the effects of their aspect ratios on the dye adsorption in DSSCs were studied. The control of the aspect ratio of well-aligned ZnO nanorods was performed by tuning the mole concentration of zinc acetate dehydrate in the range of 0.04 ∼ 0.06M. The dye amounts adsorbed in the ZnO nanorods were estimated from the UV-Visible absorbance by using the Beer-Lambert law. The efficiency of DSSCs with ZnO nanorods was measured to investigate the effects of the aspect ratio of the ZnO nanorods on the dye adsorption properties. A change in the aspect ratio of the ZnO nanorods was founded to yield a change in their dye adsorption ability, resulting in a change in the efficiency of the DSSCs.

  12. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  13. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    International Nuclear Information System (INIS)

    Garino, Nadia; Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica; Gerbaldi, Claudio

    2014-01-01

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g −1 ) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm −2 after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency

  14. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

    2014-12-05

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

  15. Effective tuning of electron charge and spin distribution in a dot-ring nanostructure at the ZnO interface

    Science.gov (United States)

    Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

    2018-05-01

    Electronic states and the Aharonov-Bohm effect in ZnO quantum dot-ring nanostructures containing few interacting electrons reveal several unique features. We have shown here that in contrast to the dot-rings made of conventional semiconductors, such as InAs or GaAs, the dot-rings in ZnO heterojunctions demonstrate several unique characteristics due to the unusual properties of quantum dots and rings in ZnO. In particular the energy spectra of the ZnO dot-ring and the Aharnov-Bohm oscillations are strongly dependant on the electron number in the dot or in the ring. Therefore even small changes of the confinement potential, sizes of the dot-ring or the magnetic field can drastically change the energy spectra and the behavior of Aharonov-Bohm oscillations in the system. Due to this interesting phenomena it is possible to effectively control with high accuracy the electron charge and spin distribution inside the dot-ring structure. This controlling can be achieved either by changing the magnetic field or the confinement potentials.

  16. Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yizhou; Liu, Xiangmei [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China); Yeung, Kelvin W.K. [Division of Spine Surgery, Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong (China); Chu, Paul K. [Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Wu, Shuilin, E-mail: shuilin.wu@gmail.com [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China)

    2017-04-01

    Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

  17. Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

    International Nuclear Information System (INIS)

    Zhu, Yizhou; Liu, Xiangmei; Yeung, Kelvin W.K.; Chu, Paul K.; Wu, Shuilin

    2017-01-01

    Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

  18. Precursor-controlled synthesis of hierarchical ZnO nanostructures, using oligoaniline-coated Au nanoparticle seeds

    Science.gov (United States)

    Krishnan, Deepti; Pradeep, T.

    2009-07-01

    Shape-selected synthesis of a large number of zinc oxide (ZnO) nano- and microstructures was achieved by the seed-mediated growth of oligoaniline-coated gold nanoparticle precursors. Distinctive ZnO structures such as nanoplates, nanospheres, microstars, microflowers, microthorns and micromultipods were synthesized by this method. Slightly different shapes were obtained in the absence of the seed solution. This is a fast, low temperature (60 °C) and biomimetic route to make a wide variety of structures. The structure and morphology of the nanostructures were studied by transmission electron microscopy (TEM) and scanning electron microscopy (SEM), respectively. Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) were utilized for the characterization of the nanostructures. A growth mechanism for these nanostructures was proposed based on these results. The concentrations of the reacting species were the main parameter causing the changes in the morphologies. The variation in morphologies of these structures is believed to be due to the ability of the seed solution as well as polyvinylpyrrolidone (PVP) to selectively suppress/depress the growth of certain planes, allowing growth to occur only in certain specific directions. Changes in the amount of growth nuclei with varying sodium hydroxide (NaOH) concentration is also seen to affect the morphology of these structures.

  19. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  20. Effects of Post Heat Treatments on ZnO Thin-Films Grown on Zn-coated Teflon Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ikhyun; Nam, Giwoong; Lee, Cheoleon; Kim, Dongwhan; Choi, Hyonkwang; Kim, Yangsoo; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong-Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2015-06-15

    ZnO thin films were first grown on Zn-coated Teflon substrates using a spin-coating method, with various post-heating temperatures. The structural and optical properties of the ZnO thin films were then investigated using field-effect scanning-electron microscopy, X-ray diffractometry, and photoluminescence (PL) spectroscopy. The surface morphology of these ZnO thin films exhibited dendritic structures. With increasing post-heating temperature, all samples preferentially exhibited preferential c-axis orientation and increased residual tensile stress. All of the films exhibited preferential c-axis orientation, and the residual tensile stress of those increased with increasing post-heating temperature. The near-band-edge emission (NBE) peaks were red-shifted after post-heating treatment at 400 ℃. The intensity of the deep-level emission (DLE) peaks gradually decreased with increasing post- heating temperature. Moreover, the narrowest ‘full width at half maximum’ (FWHM) and the highest intensity ratio of the NBE to the DLE for thin films, were observed after post-heating at 400 ℃. The ZnO thin films fabricated with the 400 ℃ post-heating process provided the highest crystallinity and optical properties.

  1. Gold nanoparticle arrays directly grown on nanostructured indium tin oxide electrodes: Characterization and electroanalytical application

    International Nuclear Information System (INIS)

    Zhang Jingdong; Oyama, Munetaka

    2005-01-01

    This work describes an improved seed-mediated growth approach for the direct attachment and growth of mono-dispersed gold nanoparticles on nanostructured indium tin oxide (ITO) surfaces. It was demonstrated that, when the seeding procedure of our previously reported seed-mediated growth process on an ITO surface was modified, the density of gold nanospheres directly grown on the surface could be highly improved, while the emergence of nanorods was restrained. By field emission scanning electron microscopy (FE-SEM) and cyclic voltammetry, the growth of gold nanoparticles with increasing growth time on the defect sites of nanostructured ITO surface was monitored. Using a [Fe(China) 6 ] 3- /[Fe(China) 6 ] 4- redox probe, the increasingly facile heterogeneous electron transfer kinetics resulting from the deposition and growth of gold nanoparticle arrays was observed. The as-prepared gold nanoparticle arrays exhibited high catalytic activity toward the electrooxidation of nitric oxide, which could provide electroanalytical application for nitric oxide sensing

  2. High quality junctions by interpenetration of vapor liquid solid grown nanostructures for microchip integration

    Energy Technology Data Exchange (ETDEWEB)

    Jebril, Seid; Kuhlmann, Hanna; Adelung, Rainer [Funktionale Nanomaterialien, CAU Kiel (Germany); Mueller, Sven [Nanowires and Thin Films, II. Physikalisches Institut, Goettingen (Germany); Ronning, Carsten [Institute for Solid State Physics, Universitaet Jena (Germany); Kienle, Lorenz [Synthese und Realstruktur, CAU Kiel (Germany); Duppel, Viola [MPI fuer Festkoerperforschung, Stuttgart (Germany)

    2009-07-01

    The usability of nanostructures in electrical devices like gas sensors depends critically on the ability to form high quality contacts and junctions. For the fabrication of various nanostructures, vapor-liquid-solid (VLS) growth is a wide spread and very efficient technique. However, forming contacts with the VLS grown structures to utilize them in a device is still tedious, because either the substrate has to be epitaxial to the VLS material or a manual alignment is necessary. Here we demonstrate the contact formation by simply using the ability of individual crystals to interpenetrate each other during the straight forward VLS growth. This allows growing VLS structures directly on two neighboring gold circuit paths of a microchip; bridges over predefined gaps will be formed. Moreover, TEM investigations confirm the high quality of the crystalline junctions that allow demonstrations as UV and hydrogen-sensor. The VLS devices are compared with conventional produced.

  3. Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

    International Nuclear Information System (INIS)

    Zhong Minjian; Guo Guanglei; Yang Junyi; Ma Ninghua; Ye Guo; Ma Hongliang; Guo Xiaodong; Li Ruxin

    2008-01-01

    This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragg-like grating is formed by moving the sample at a speed of 10 μm/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal

  4. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

    Science.gov (United States)

    Singh, Shaivalini; Chakrabarti, P

    2012-03-01

    We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

  5. Optimization of CVD parameters for long ZnO NWs grown on ITO ...

    Indian Academy of Sciences (India)

    Zinc oxide (ZnO) is a II–VI compound semiconductor with a wide direct energy .... observed by scanning electron microscope (SEM/JEOL–. JSM 5140) ... SEM images of ZnO NWs growth on ITO–glass at argon to oxygen flow rate = 200/20 ...

  6. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    In electrical characterization as well, when annealing temperature was increased .... of ZnO (002) peaks and (c) crystallite size and stress generation on ZnO thin films ... sufficient kinetic energy and surface mobility to occupy stable positions ...

  7. Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

    KAUST Repository

    Labouchere, Philippe; Chandiran, Aravind Kumar; Moehl, Thomas; Harms, Hauke; Chavhan, Sudam; Tena-Zaera, Ramon; Nazeeruddin, Mohammad Khaja; Graetzel, Michael; Tetreault, Nicolas

    2014-01-01

    A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive

  8. Tuning of Ag doped core−shell ZnO NWs/Cu2O grown by electrochemical deposition

    International Nuclear Information System (INIS)

    Makhlouf, Houssin; Messaoudi, Olfa; Souissi, Ahmed; Ben Assaker, Ibtissem; Oueslati, Mihrez; Bechelany, Mikhael; Chtourou, Radhouane

    2015-01-01

    ZnO nanowires (NWs)/Cu 2 O–Ag core–shell nanostructures (NSs) have been synthesized by electrochemical deposition method on ITO-coated glass substrates in order to improve the efficiency of the type-II transition of core–shell ZnO NWs/Cu 2 O–Ag NSs. The morphologies of the obtained NSs were studied by scanning electron microscopy confirming the presence of core–shell NSs. The crystalline proprieties were analyzed by x-ray diffraction and micro-Raman measurement: wurtzite ZnO and cuprit Cu 2 O phase were founded. The presence of Ag content in core–shell NS was detected by EDX. Optical measurement reveals an additional contribution δE at about 1.72 eV attributed to the type-II interfacial transition between the valance band of cuprit−Cu 2 O and the conduction band of W−ZnO. The effect of the Ag doping into the type-II transition was investigated. A red shift of the type-II transition was detected according to the Ag concentration. These materials could have potential applications in photocatalytic and photovoltaic fields. (paper)

  9. Optical and morphological properties of ZnO- and TiO2-derived nanostructures synthesized via a microwave-assisted hydrothermal method

    CSIR Research Space (South Africa)

    Moloto, N

    2012-01-01

    Full Text Available Corporation International Journal of Photoenergy Volume 2012, Article ID 189069, 6 pages doi:10.1155/2012/189069 Research Article Optical and Morphological Properties of ZnO- and TiO2-Derived Nanostructures Synthesized via a Microwave... International Journal of Photoenergy the sol-gel, hydrothermal process, and pulse laser deposition [22?24]. Although the sol-gel method is widely accepted for the preparation of both ZnO and TiO2 nanostructures, the calcinations process is essential and can...

  10. Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Strelchuk, V.V. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Nikolenko, A.S., E-mail: nikolenko_mail@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Kolomys, O.F.; Rarata, S.V.; Avramenko, K.A.; Lytvyn, P.M. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Tronc, P. [Centre National de la Recherche Scientifique, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris, 10 rue Vauquelin, 75005 Paris (France); Chey, Chan Oeurn; Nur, Omer; Willander, Magnus [Department of Science and Technology, Linköping University, 601 74 Norrköping (Sweden)

    2016-02-29

    The effect of Mn-doping on the structural, morphological, optical and magnetic properties of the ZnO:Mn nanorods (NRs) synthesized by aqueous chemical process is reported. Grown ZnO:Mn NRs are shown to have hexagonal end facets and the diameters increasing with nominal Mn content. Optical absorption measurements show a decrease in optical band gap with increase of Mn concentration. Raman spectroscopy revealed significant modification of the lattice vibrational properties of the ZnO matrix upon Mn doping. The additional Mn-related vibrational mode, intensity of which increases with amount of Mn can be regarded as an evidence of Mn incorporation into the host lattice of the ZnO. At high Mn concentrations, coexistence of hexagonal Zn{sub 1−x}Mn{sub x}O phase along with the secondary phases of ZnMn{sub 2}O{sub 4} cubic spinel is revealed. Magnetic properties of ZnO:Mn NRs are studied by combinatorial atomic force microscopy and magnetic force microscopy imaging, and obtained clear magnetic contrast at room temperature provides a strong evidence of ferromagnetic behavior. - Highlights: • Synthesis of Mn-doped ZnO nanorods by hydrothermal method is demonstrated. • Doping with Mn significantly changes the morphology of ZnO nanorods. • Additional Mn-induced Raman modes evidence incorporation of Mn into ZnO matrix. • Formation of secondary ZnMn{sub 2}O{sub 4} spinel phase is found at high Mn concentrations. • Contrast MFM images of ZnO:Mn nanorods indicate ferromagnetism at room temperature.

  11. Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

    International Nuclear Information System (INIS)

    Park, Dong Jun; Kim, Dong Chan; Lee, Jeong Yong; Cho, Hyung Koun

    2006-01-01

    The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [1 0 1-bar 0], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented

  12. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  13. Eosin-Y sensitized core-shell TiO2-ZnO nano-structured photoanodes for dye-sensitized solar cell applications.

    Science.gov (United States)

    Manikandan, V S; Palai, Akshaya K; Mohanty, Smita; Nayak, Sanjay K

    2018-06-01

    In the current investigation, TiO 2 and TiO 2 -ZnO (core-shell) spherical nanoparticles were synthesized by simple combined hydrolysis and refluxing method. A TiO 2 core nanomaterial on the shell material of ZnO was synthesized by utilizing variable ratios of ZnO. The structural characterization of TiO 2 -ZnO core/shell nanoparticles were done by XRD analysis. The spherical structured morphology of the TiO 2 -ZnO has been confirmed through field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) studies. The UV-visible spectra of TiO 2 -ZnO nanostructures were also compared with the pristine TiO 2 to investigate the shift of wavelength. The TiO 2 -ZnO core/shell nanoparticles at the interface efficiently collect the photogenarated electrons from ZnO and also ZnO act a barrier for reduced charge recombination of electrolyte and dye-nanoparticles interface. This combination improved the light absorption which induced the charge transfer ability and dye loading capacity of core-shell nanoparticles. An enhancement in the short circuit current (J sc ) from 1.67 mA/cm 2 to 2.1 mA/cm 2 has been observed for TiO 2 -ZnObased photoanode (with platinum free counter electrode), promises an improvement in the energy conversion efficiency by 57% in comparison with that of the DSSCs based on the pristine TiO 2 . Henceforth, TiO 2 -ZnO photoelectrode in ZnO will effectively act as barrier at the interface of TiO 2 -ZnO and TiO 2 , ensuring the potential for DSSC application. Copyright © 2018 Elsevier B.V. All rights reserved.

  14. Growth and characterization of Ge nanostructures selectively grown on patterned Si

    International Nuclear Information System (INIS)

    Cheng, M.H.; Ni, W.X.; Luo, G.L.; Huang, S.C.; Chang, J.J.; Lee, C.Y.

    2008-01-01

    By utilizing different distribution of strain fields around the edges of oxide, which are dominated by a series of sizes of oxide-patterned windows, long-range ordered self-assembly Ge nanostructures, such as nano-rings, nano-disks and nano-dots, were selectively grown by ultra high vacuum chemical vapor deposition (UHV-CVD) on Si (001) substrates. High-resolution double-crystal symmetrical ω/2θ scans and two-dimensional reciprocal space mapping (2D-RSM) technologies employing the triple axis X-ray diffractometry have been used to evaluate the quality and strain status of as-deposited as well as in-situ annealed Ge nanostructures. Furthermore, we also compare the quality and strain status of Ge epilayers grown on planar unpatterned Si substrates. It was found that the quality of all Ge epitaxial structures is improved after in-situ annealing process and the quality of Ge nano-disk structures is better than that of Ge epilayers on planar unpatterned Si substrates, because oxide sidewalls are effective dislocation sinks. We also noted that the degree of relaxation for as-deposited Ge epilayers on planar unpatterned Si substrates is less than that for as-deposited Ge nano-disk structures. After in-situ annealing process, all Ge epitaxial structures are almost at full relaxation whatever Ge epitaxial structures grew on patterned or unpatterned Si substrates

  15. The optical properties of ZnO films grown on porous Si templates

    International Nuclear Information System (INIS)

    Liu, Y L; Liu, Y C; Yang, H; Wang, W B; Ma, J G; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    ZnO films were electrodeposited on porous silicon templates with different porosities. The photoluminescence (PL) spectra of the samples before and after deposition of ZnO were measured to study the effect of template porosity on the luminescence properties of ZnO/porous Si composites. As-prepared porous Si (PS) templates emit strong red light. The red PL peak of porous Si after deposition of ZnO shows an obvious blueshift, and the trend of blueshift increases with an increase in template porosity. A green emission at about 550 nm was also observed when the porosity of template increases, which is ascribed to the deep-level emission band of ZnO. A model-based band diagram of the ZnO/porous Si composite is suggested to interpret the properties of the composite

  16. Biological Properties of Ti-Nb-Zr-O Nanostructures Grown on Ti35Nb5Zr Alloy

    Directory of Open Access Journals (Sweden)

    Zhaohui Li

    2012-01-01

    Full Text Available Surface modification of low modulus implant alloys with oxide nanostructures is one of the important ways to achieve favorable biological behaviors. In the present work, amorphous Ti-Nb-Zr-O nanostructures were grown on a peak-aged Ti35Nb5Zr alloy through anodization. Biological properties of the Ti-Nb-Zr-O nanostructures were investigated through in vitro bioactivity testings, stem cell interactions, and drug release experiments. The Ti-Nb-Zr-O nanostructures demonstrated a good capability of inducing apatite formation after immersion in simulated body fluids (SBFs. Drug delivery experiment based on gentamicin and the Ti-Nb-Zr-O nanostructures indicated that a high drug loading content could result in a prolonged release process and a higher quantity of drug residues in the oxide nanostructures after drug release. Quick stem cell adhesion and spreading, as well as fast formation of extracellular matrix materials on the surfaces of the Ti-Nb-Zr-O nanostructures, were found. These findings make it possible to further explore the biomedical applications of the Ti-Nb-Zr-O nanostructure modified alloys especially clinical operation of orthopaedics by utilizing the nanostructures-based drug-release system.

  17. Quantitative and simultaneous analysis of the polarity of polycrystalline ZnO seed layers and related nanowires grown by wet chemical deposition

    Science.gov (United States)

    Guillemin, Sophie; Parize, Romain; Carabetta, Joseph; Cantelli, Valentina; Albertini, David; Gautier, Brice; Brémond, Georges; Fong, Dillon D.; Renevier, Hubert; Consonni, Vincent

    2017-03-01

    The polarity in ZnO nanowires is an important issue since it strongly affects surface configuration and reactivity, nucleation and growth, electro-optical properties, and nanoscale-engineering device performances. However, measuring statistically the polarity of ZnO nanowire arrays grown by chemical bath deposition and elucidating its correlation with the polarity of the underneath polycrystalline ZnO seed layer grown by the sol-gel process represents a major difficulty. To address that issue, we combine resonant x-ray diffraction (XRD) at Zn K-edge using synchrotron radiation with piezoelectric force microscopy and polarity-sensitive chemical etching to statistically investigate the polarity of more than 107 nano-objects both on the macroscopic and local microscopic scales, respectively. By using high temperature annealing under an argon atmosphere, it is shown that the compact, highly c-axis oriented ZnO seed layer is more than 92% Zn-polar and that only a few small O-polar ZnO grains with an amount less than 8% are formed. Correlatively, the resulting ZnO nanowires are also found to be Zn-polar, indicating that their polarity is transferred from the c-axis oriented ZnO grains acting as nucleation sites in the seed layer. These findings pave the way for the development of new strategies to form unipolar ZnO nanowire arrays as a requirement for a number of nanoscale-engineering devices like piezoelectric nanogenerators. They also highlight the great advantage of resonant XRD as a macroscopic, non-destructive method to simultaneously and statistically measure the polarity of ZnO nanowire arrays and of the underneath ZnO seed layer.

  18. Ultrasound-assisted synthesis of nano-structured Zinc(II)-based metal-organic frameworks as precursors for the synthesis of ZnO nano-structures.

    Science.gov (United States)

    Bigdeli, Fahime; Ghasempour, Hosein; Azhdari Tehrani, Alireza; Morsali, Ali; Hosseini-Monfared, Hassan

    2017-07-01

    A 3D, porous Zn(II)-based metal-organic framework {[Zn 2 (oba) 2 (4-bpmn)]·(DMF) 1.5 } n (TMU-21), (4-bpmn=N,N'-Bis-pyridin-4-ylmethylene-naphtalene-1,5-diamine, H 2 oba=4,4'-oxybis(benzoic acid)) with nano-rods morphology under ultrasonic irradiation at ambient temperature and atmospheric pressure was prepared and characterized by scanning electron microscopy. Sonication time and concentration of initial reagents effects on the size and morphology of nano-structured MOFs were studied. Also {[Zn 2 (oba) 2 (4-bpmn)] (TMU-21) and {[Zn 2 (oba) 2 (4-bpmb)] (TMU-6), 4-bpmb=N,N'-(1,4-phenylene)bis(1-(pyridin-4-yl)methanimine) were easily prepared by mechanochemical synthesis. Nanostructures of Zinc(II) oxide were obtained by calcination of these compounds and their de-solvated analogue as activated MOFs, at 550°C under air atmosphere. As a result of that, different Nanostructures of Zinc(II) oxide were obtained. The ZnO nanoparticles were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and FT-IR spectroscopy. Copyright © 2016 Elsevier B.V. All rights reserved.

  19. 3D magnetic nanostructures grown by focused electron and ion beam induced deposition

    Science.gov (United States)

    Fernandez-Pacheco, Amalio

    Three-dimensional nanomagnetism is an emerging research area, where magnetic nanostructures extend along the whole space, presenting novel functionalities not limited to the substrate plane. The development of this field could have a revolutionary impact in fields such as electronics, the Internet of Things or bio-applications. In this contribution, I will show our recent work on 3D magnetic nanostructures grown by focused electron and ion beam induced deposition. This 3D nano-printing techniques, based on the local chemical vapor deposition of a gas via the interaction with electrons and ions, makes the fabrication of complex 3D magnetic nanostructures possible. First, I will show how by exploiting different growth regimes, suspended Cobalt nanowires with modulated diameter can be patterned, with potential as domain wall devices. Afterwards, I will show recent results where the synthesis of Iron-Gallium alloys can be exploited in the field of artificial multiferroics. Moreover, we are developing novel methodologies combining physical vapor deposition and 3D nano-printing, creating Permalloy 3D nanostrips with controllable widths and lengths up to a few microns. This approach has been extended to more complex geometries by exploiting advanced simulation growth techniques combining Monte Carlo and continuum model methods. Throughout the talk, I will show the methodology we are following to characterize 3D magnetic nanostructures, by combining magneto-optical Kerr effect, scanning probe microscopy and electron and X-R magnetic imaging, and I will highlight some of the challenges and opportunities when studying these structures. I acknowledge funding from EPSRC and the Winton Foundation.

  20. Selective tuning of enhancement in near band edge emission in hydrothermally grown ZnO nanorods coated with gold

    Energy Technology Data Exchange (ETDEWEB)

    Dixit, Tejendra, E-mail: phd12110211@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Palani, I.A., E-mail: palaniia@iiti.ac.in [Mechatronics and Instrumentation Lab, Department of Mechanical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India); Singh, Vipul, E-mail: vipul@iiti.ac.in [Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, IIT Indore, Indore, Madhya Pradesh (India); Centre of Material Science and Engineering, IIT Indore, Indore, Madhya Pradesh (India)

    2016-02-15

    The room-temperature photoluminescence (PL) spectra of hydrothermally grown ZnO nanorods (NRs) coated with Au using dc sputtering and thermal evaporation were systematically investigated. Au coated (via dc sputtering) ZnO NRs were found to exhibit very large near band edge emission enhancement, on the contrary Au coated (via thermal evaporation) ZnO NRs showed suppression in the near band edge emission peak. These observed results were further confirmed by excitation intensity (EI) dependent PL spectra of different samples. Further using Raman spectra it has been observed that the longitudinal optical (LO) phonons exhibit an enhancement and a weakening by the Au coatings, using dc sputtering and thermal evaporation respectively. Finally by controlling the concentration of KMnO{sub 4} as an additive during the hydrothermal growth, selective tuning in the defect density was carried out, which was later utilized to probe the effect of defect density of the Au–ZnO plasmonic coupling. Moreover, our results strongly suggest that the EI dependent PL has a strong dependence on the metal coating technique. The findings presented in this article clearly indicate the dependence of Au–ZnO plasmonic coupling on the overall defect density and the process of Au deposition.

  1. Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Amin, G.; Hussain, I.; Zaman, S.; Bano, N.; Nur, O.; Willander, M. [Department of Science and Technology, Campus Norrkoeping, Linkoeping University, 60174 Norrkoeping (Sweden)

    2010-03-15

    High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V{sub TFL}) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for the NTs were obtained as {proportional_to}0.27 eV and 2.1 x 10{sup 16} cm{sup -3}, respectively. The same parameters were also extracted for the ZnO NRs. The deep-level states observed crossponds to zinc interstitials (Zn{sub i}), which are responsible for the violet emission. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. Enhancing the numerical aperture of lenses using ZnO nanostructure-based turbid media

    International Nuclear Information System (INIS)

    Khokhra, Richa; Barman, Partha Bir; Kumar, Rajesh; Kumar, Manoj; Rawat, Nitin; Jang, Hwanchol; Lee, Heung-No

    2013-01-01

    Nanosheets, nanoparticles, and microstructures of ZnO were synthesized via a wet chemical method. ZnO films with a thickness of 44–46 μm were fabricated by spray coating, and these have been investigated for their potential use in turbid lens applications. A morphology-dependent comparative study of the transmittance of ZnO turbid films was conducted. Furthermore, these ZnO turbid films were used to enhance the numerical aperture (NA) of a Nikon objective lens. The variation in NA with different morphologies was explained using size-dependent scattering by the fabricated films. A maximum NA of around 1.971 of the objective lens with a turbid film of ZnO nanosheets was achieved. (paper)

  3. Electron transport properties in ZnO nanowires/poly(3-hexylthiophene) hybrid nanostructure

    International Nuclear Information System (INIS)

    Cheng Ke; Cheng Gang; Wang Shujie; Fu Dongwei; Zou Bingsuo; Du Zuliang

    2010-01-01

    The ZnO nanowires (NWs) array/poly(3-hexylthiophene) (P3HT) hybrid prototype device was fabricated. An ultraviolet (UV) light of λ = 350 nm is used to investigate the photo-electric properties of the ZnO NWs array and hybrid structure. In this way, we can avoid the excitation of P3HT, which can give us a real electron transport ability of ZnO NWs itself. Our results demonstrated a higher and faster photo-electric response of 3 s for the hybrid structure while 9 s for the ZnO NWs array. The surface states related slow photo-electric response was also observed for them. The charge transfer mechanism and the influence of surface states were discussed. The current work provides us profound understandings on the electron transport ability of ZnO NWs array in a working hybrid polymer solar cell, which is crucial for optimizing the device performance.

  4. Controlled synthesis of various ZnO nanostructured materials by capping agents-assisted hydrothermal method for dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Akhtar, M. Shaheer; Khan, M. Alam; Yang, O-Bong [School of Semiconductor and Chemical Engineering, Center for Advanced Radiation Technology, Jeon-Ju (Korea); New and Renewable Energy Center, Chonbuk National University, Jeon-Ju (Korea); Jeon, Myung Seok [Photocatalysis and Photoelectrochemistry Research Center, Korea Institute of Energy Research (KIER), Daejon 305-343 (Korea)

    2008-11-15

    In this work, the morphology of ZnO materials could be controlled by changing the capping agent at constant alkali solution in hydrothermal process. ZnO nanomaterials with the structure of flowers, sheet-spheres and plates were obtained with the capping agent of ammonia, citric acid and oxalic acid, respectively. Thus prepared ZnO nanomaterials were characterized and applied as the photo-anode materials for dye-sensitized solar cell. All synthesized ZnO nanomaterials possessed high crystalline wurtzite structures grown in the (001) direction with the size of 2-4{mu}m, which consist of ZnO units around 20-400 nm. Among them, Sheet-sphere ZnO showed the highest crystallinity, surface area and uniform film morphology, resulting in the significantly improved PV performance with the overall conversion efficiency of 2.61% in dye-sensitized solar cell (DSSC) fabricated with sheet-sphere ZnO. It is notable that the ZnO materials with sphere structure may be the optimal photo-anode material among various ZnO nanomaterials for DSSC. (author)

  5. Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure

    CSIR Research Space (South Africa)

    Jule, L

    2017-07-01

    Full Text Available : 151-155 Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure Jule L Dejene F Ali AG Roro KT Mwakikunga BW ABSTRACT: In this work, electron paramagnetic resonance (EPR...

  6. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    Energy Technology Data Exchange (ETDEWEB)

    Simimol, A. [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Anappara, Aji A. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Greulich-Weber, S. [Department of Physics, Nanophotonic Materials, Faculty of Science, University of Paderborn, 33095 Paderborn (Germany); Chowdhury, Prasanta [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Barshilia, Harish C., E-mail: harish@nal.res.in

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  7. Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

    2007-01-01

    Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

  8. Effects of stabilizer ratio on photoluminescence properties of sol-gel ZnO nano-structured thin films

    International Nuclear Information System (INIS)

    Boudjouan, F.; Chelouche, A.; Touam, T.; Djouadi, D.; Khodja, S.; Tazerout, M.; Ouerdane, Y.; Hadjoub, Z.

    2015-01-01

    Nanostructured ZnO thin films with different molar ratios of MEA to zinc acetate (0.5, 1.0, 1.5 and 2.0) have been deposited on glass substrates by a sol–gel dip coating technique. X-ray diffraction, Scanning Electron Microscopy, UV–visible spectrophotometry and photoluminescence spectroscopy have been employed to investigate the effect of MEA stabilizer ratio on structural, morphological, absorbance and emission properties of the ZnO thin films. Diffraction patterns have shown that all the films are polycrystalline and exhibit a wurtzite hexagonal structure. The c axis orientation has been enhanced with increasing stabilizer ratio. SEM micrographs have revealed that the morphology of the ZnO films depend on stabilizer ratio. The UV–visible absorption spectra have demonstrated that the optical absorption is affected by stabilizer ratio. The photoluminescence spectra have indicated one ultraviolet and two visible emission bands (green and red), while band intensities are found to be dependent on stabilizer ratio. ZnO thin films deposited at MEA ratio of 1.0 show the highest UV emission while the minimum UV emission intensity is observed in thin films deposited at ratio of 0.5 and the maximum green has been recorded for films deposited at MEA ratio of 2.0. - Highlight: • c axis orientation increases with increasing MEA ratio. • The increase of MEA ration from 0.5 to 1.0 enhances greatly the UV emission. • The larger I UV /I visible is obtained for the MEA to Zn ratio of 1:1. • The MEA ratio of 0.5 favors the formation of large density of V zn . • The MEA ratio of 2.0 increases the V o density

  9. Structural, magnetic and optical properties of ZnO nanostructures converted from ZnS nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Prayas Chandra; Ghosh, Surajit; Srivastava, P.C., E-mail: pcsrivastava50@gmail.com

    2016-09-15

    Graphical abstract: The phase conversion of ZnS to highly crystalline hexagonal ZnO was done by heat treatment. - Highlights: • Phase change of cubic ZnS to hexagonal ZnO via heat treatment. • Band gap was found to decrease with increasing calcinations temperature. • ZnO samples have higher magnetic moment than ZnS. • Blocking Temperature of the samples is well above room temperature. • Maximum negative%MR with saturation value ∼38% was found for sample calcined at 600° C. - Abstract: The present work concentrates on the synthesis of cubic ZnS and hexagonal ZnO semiconducting nanoparticle from same precursor via co-precipitation method. The phase conversion of ZnS to highly crystalline hexagonal ZnO was done by heat treatment. From the analysis of influence of calcination temperature on the structural, optical and vibrational properties of the samples, an optimum temperature was found for the total conversion of ZnS nanoparticles to ZnO. Role of quantum confinement due to finite size is evident from the blue shift of the fundamental absorption in UV–vis spectra only in the ZnS nanoparticles. The semiconducting nature of the prepared samples is confirmed from the UV–vis, PL study and transport study. From the magnetic and transport studies, pure ZnO phase was found to be more prone to magnetic field.

  10. Influence Al doped ZnO nanostructure on structural and optical properties

    International Nuclear Information System (INIS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-01-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  11. Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

    Directory of Open Access Journals (Sweden)

    Nina J. Blumenstein

    2017-01-01

    Full Text Available Biomaterials are used as model systems for the deposition of functional inorganic materials under mild reaction conditions where organic templates direct the deposition process. In this study, this principle was adapted for the formation of piezoelectric ZnO thin films. The influence of two different organic templates (namely, a carboxylate-terminated self-assembled monolayer and a sulfonate-terminated polyelectrolyte multilayer on the deposition and therefore on the piezoelectric performance was investigated. While the low negative charge of the COOH-SAM is not able to support oriented attachment of the particles, the strongly negatively charged sulfonated polyelectrolyte leads to texturing of the ZnO film. This texture enables a piezoelectric performance of the material which was measured by piezoresponse force microscopy. This study shows that it is possible to tune the piezoelectric properties of ZnO by applying templates with different functionalities.

  12. ZnO nanorod arrays grown under different pressures and their photoluminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Meng Xiuqing [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Li Binghui [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Wang Xiaohua [National Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and technology, 7089 Weixing Road Changchun (China); Fan Xiwu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)

    2007-01-15

    The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays.

  13. ZnO nanorod arrays grown under different pressures and their photoluminescence properties

    International Nuclear Information System (INIS)

    Meng Xiuqing; Zhao Dongxu; Shen Dezhen; Zhang Jiying; Li Binghui; Wang Xiaohua; Fan Xiwu

    2007-01-01

    The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays

  14. Photoelectrochemical characterization of the role of organic sensitizers adsorbed on nanostructured ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hastall, Andreas; Loewenstein, Thomas; Schlettwein, Derck [Institut fuer Angewandte Physik, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany)

    2008-07-01

    Porous sensitized ZnO is a promising material for application as electrode in dye-sensitized solar cells (DSSC) to utilize the intense absorption of organic sensitizers in the visible spectral range. Electrochemical deposition of ZnO from aqueous solutions is a low temperature process (<150 C) which allows the use of various substrates. The process can be performed at low energy input and cost and is therefore promising short pay-back times and high net energy gains. The role of the adsorbed sensitizer dye and resulting charge carrier generation, collection, but also recombination in the interface of ZnO/sensitizer/electrolyte of DSSC were analyzed in detail by transient photocurrent measurements, intensity modulated photocurrent and photovoltage spectroscopy (IMPS/IMVS), photovoltage decay and charge-extraction. Results are discussed for different sensitizers adsorbed to the ZnO surface and for ZnO prepared on various substrates and optimized in structure and morphology.

  15. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

    2007-10-15

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

  16. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    International Nuclear Information System (INIS)

    Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

    2007-01-01

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

  17. Structural, photoluminescence and XPS properties of Tm3þ ions in ZnO nanostructures

    CSIR Research Space (South Africa)

    Kabongo, GL

    2017-07-01

    Full Text Available of photoluminescence (PL) spectroscopy. Finally, Tm 4d core level was detected in ZnO: 0.5 mol% Tm(sup3+) sample from high resolution X-Ray Photoelectron Spectroscopy (XPS) scan....

  18. Bio-hydrogen production based on catalytic reforming of volatiles generated by cellulose pyrolysis: An integrated process for ZnO reduction and zinc nanostructures fabrication

    International Nuclear Information System (INIS)

    Maciel, Adriana Veloso; Job, Aldo Eloizo; Nova Mussel, Wagner da; Brito, Walter de; Duarte Pasa, Vanya Marcia

    2011-01-01

    The paper presents a process of cellulose thermal degradation with bio-hydrogen generation and zinc nanostructures synthesis. Production of zinc nanowires and zinc nanoflowers was performed by a novel processes based on cellulose pyrolysis, volatiles reforming and direct reduction of ZnO. The bio-hydrogen generated in situ promoted the ZnO reduction with Zn nanostructures formation by vapor-solid (VS) route. The cellulose and cellulose/ZnO samples were characterized by thermal analyses (TG/DTG/DTA) and the gases evolved were analyzed by FTIR spectroscopy (TG/FTIR). The hydrogen was detected by TPR (Temperature Programmed Reaction) tests. The results showed that in the presence of ZnO the cellulose thermal degradation produced larger amounts of H 2 when compared to pure cellulose. The process was also carried out in a tubular furnace with N 2 atmosphere, at temperatures up to 900 o C, and different heating rates. The nanostructures growth was catalyst-free, without pressure reduction, at temperatures lower than those required in the carbothermal reduction of ZnO with fossil carbon. The nanostructures were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The optical properties were investigated by photoluminescence (PL). One mechanism was presented in an attempt to explain the synthesis of zinc nanostructures that are crystalline, were obtained without significant re-oxidation and whose morphologies are dependent on the heating rates of the process. This route presents a potential use as an industrial process taking into account the simple operational conditions, the low costs of cellulose and the importance of bio-hydrogen and nanostructured zinc.

  19. Morphologies of Sol–Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures

    Directory of Open Access Journals (Sweden)

    Chandra Sudhir

    2007-01-01

    Full Text Available AbstractWe have shown that the morphological features of the sol–gel derived thin films of ZnO depend strongly on the choice of the precursor materials. In particular, we have used zinc nitrate and zinc acetate as the precursor materials. While the films using zinc acetate showed a smoother topography, those prepared by using zinc nitrate exhibited dendritic character. Both types of films were found to be crystalline in nature. The crystallite dimensions were confined to the nanoscale. The crystallite size of the nanograins in the zinc nitrate derived films has been found to be smaller than the films grown by using zinc acetate as the precursor material. Selected area electron diffraction patterns in the case of both the precursor material has shown the presence of different rings corresponding to different planes of hexagonal ZnO crystal structure. The results have been discussed in terms of the fundamental considerations and basic chemistry governing the growth kinetics of these sol–gel derived ZnO films with both the precursor materials.

  20. Study of Growth Kinetics in One Dimensional and Two Dimensional ZnO Nanostructures

    Science.gov (United States)

    Yin, Xin

    Because of the merits arising from the unique geometry, nanostructure materials have been an essential class of materials, which have shown great potentials in the fields of electronics, photonics, and biology. With various nanostructures being intensively investigated and successfully complemented into device applications, there has been one increasing demand to the investigation of the growth mechanism devoted to the controlled nanostructure synthesis. Motivated by this situation, this thesis is focused on the fundamental understanding of the nanostructure growth. Specifically, by taking zinc oxide as an example material, through controlling the basic driving force, that is, the supersaturation, I have rationally designed and synthesized various of nanostructures, and further applied the classical layer-by-layer growth mechanism to the understanding on the formation of these nanostructures, they are, the convex-plate-capped nanowires, the concave-plate-capped nanowires, the facet evolution at the tip of the nanowires, and the ultrathin 2D nanosheets.

  1. Zinc oxide nanostructures by chemical vapour deposition as anodes for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Laurenti, M., E-mail: marco.laurenti@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Garino, N. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Porro, S.; Fontana, M. [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy); Gerbaldi, C., E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Department of Applied Science and Technology – DISAT, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin (Italy)

    2015-08-15

    Highlights: • ZnO nanostructures are grown by simple chemical vapour deposition. • Polycrystalline nanostructured porous thin film is obtained. • Film exhibits stable specific capacity (∼400 mA h g{sup −1}) after prolonged cycling. • CVD-grown ZnO nanostructures show promising prospects as Li-ion battery anode. - Abstract: ZnO nanostructures are grown by a simple chemical vapour deposition method directly on a stainless steel disc current collector and successfully tested in lithium cells. The structural/morphological characterization points out the presence of well-defined polycrystalline nanostructures having different shapes and a preferential orientation along the c-axis direction. In addition, the high active surface of the ZnO nanostructures, which accounts for a large electrode/electrolyte contact area, and the complete wetting with the electrolyte solution are considered to be responsible for the good electrical transport properties and the adequate electrochemical behaviour, as confirmed by cyclic voltammetry and galvanostatic charge/discharge cycling. Indeed, despite no binder or conducting additives are used, when galvanostatically tested in lithium cells, after an initial decay, the ZnO nanostructures can provide a rather stable specific capacity approaching 70 μA h cm{sup −2} (i.e., around 400 mA h g{sup −1}) after prolonged cycling at 1 C, with very high Coulombic efficiency and an overall capacity retention exceeding 62%.

  2. Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Nam, Giwoong; Kim, Soaram [Department of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Kim, Do Yeob [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Lee, Dong-Yul [LED R and D team, Samsung Electronics Co. Ltd., Yongin 446-711 (Korea, Republic of); Kim, Jin Soo [Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Kim, Sung-O [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Kim, Jong Su [Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749 (Korea, Republic of); Son, Jeong-Sik [Department of Visual Optics, Kyungwoon University, Gumi, Gyeongsangbuk-do 730-850 (Korea, Republic of); Leem, Jae-Young, E-mail: jyleem@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of)

    2012-10-15

    Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol-gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were {alpha}=4 Multiplication-Sign 10{sup -3} eV/K and {beta}=4.9 Multiplication-Sign 10{sup 3} K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission. - Highlights: Black-Right-Pointing-Pointer ZnO thin films on R-plane sapphire substrates were grown by sol-gel method. Black-Right-Pointing-Pointer Two emission peaks at 3.338 and 3.279 eV were observed at 300 K Black-Right-Pointing-Pointer Activation energies of the two peaks were 39.3 and 28.9 meV,respectively. Black-Right-Pointing-Pointer Exciton radiative lifetime of the two peaks increased with increasing temperature.

  3. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chen, W. Z. [Quanzhou Normal University, Key Laboratory of Information Functional Material for Fujian Higher Education, College of Physics & Information Engineering (China); Wang, B. B. [Chongqing University of Technology, College of Chemical Engineering (China); Qu, Y. Z.; Huang, X. [Xiamen University, College of Energy, Xiang’an Campus (China); Ostrikov, K. [Queensland University of Technology, School of Chemistry, Physics and Mechanical Engineering (Australia); Levchenko, I.; Xu, S. [Nanyang Technological University, Plasma Sources and Applications Centre, National Institute of Education (Singapore); Cheng, Q. J., E-mail: qijin.cheng@xmu.edu.cn [Xiamen University, College of Energy, Xiang’an Campus (China)

    2017-03-15

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O{sub 2}-Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  4. Catalyst-free growth and tailoring morphology of zinc oxide nanostructures by plasma-enhanced deposition at low temperature

    International Nuclear Information System (INIS)

    Chen, W. Z.; Wang, B. B.; Qu, Y. Z.; Huang, X.; Ostrikov, K.; Levchenko, I.; Xu, S.; Cheng, Q. J.

    2017-01-01

    ZnO nanostructures were grown under different deposition conditions from Zn films pre-deposited onto Si substrates in O 2 -Ar plasma, ignited in an advanced custom-designed plasma-enhanced horizontal tube furnace deposition system. The morphology and structure of the synthesized ZnO nanostructures were systematically and extensively investigated by scanning and transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. It is shown that the morphology of ZnO nanostructures changes from the hybrid ZnO/nanoparticle and nanorod system to the mixture of ZnO nanosheets and nanorods when the growth temperature increases, and the density of ZnO nanorods increases with the increase of oxygen flow rate. The formation of ZnO nanostructures was explained in terms of motion of Zn atoms on the Zn nanoparticle surfaces, and to the local melting of Zn nanoparticles or nanosheets. Moreover, the photoluminescence properties of ZnO nanostructures were studied, and it was revealed that the photoluminescence spectrum features two strong ultraviolet bands at about 378 and 399 nm and a series of weak blue bands within a range of 440–484 nm, related to the emissions of free excitons, near-band edge, and defects of ZnO nanostructures. The obtained results enrich our knowledge on the synthesis of ZnO-based nanostructures and contribute to the development of ZnO-based optoelectronic devices.

  5. Characterization of CBD grown ZnO films with high c-axis orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

    2012-06-15

    Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

  6. Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

    Science.gov (United States)

    Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

    2018-05-01

    ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.

  7. Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D 0 X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied

  8. Effect of different sol concentrations on the properties of nanocrystalline ZnO thin films grown on FTO substrates by sol-gel spin-coating

    International Nuclear Information System (INIS)

    Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Kim, Dongwan; Park, Minju; Kim, Haeun; Lee, Wookbin; Leem, Jaeyoung; Kim, Jongsu; Kim, Jin Soo

    2014-01-01

    Nanocrystalline ZnO thin films grown on fluorine-doped tinoxide (FTO) substrates were fabricated using the spin-coating method. The structural and the optical properties of the ZnO thin films prepared using different sol concentrations were investigated by using field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), photoluminescence (PL) measurements, and ultraviolet-visible (UV-vis) spectrometry. The surface morphology of the ZnO thin films, as observed in the SEM images, exhibited a mountain-chain structure. XRD results indicated that the thin films were preferentially orientated along the direction of the c-axis and that the grain size of the ZnO thin films increased with increasing sol concentration. The PL spectra showed a strong ultraviolet emission peak at 3.22 eV and a broad orange emission peak at 2.0 eV. The intensities of deep-level emission (DLE) gradually increased with increasing sol concentration from 0.4 to 1.0 M. The transmittance spectra of the ZnO thin films showed that the ZnO thin films were transparent (∼85%) in the visible region and exhibited sharp absorption edges at 375 nm. Thus, The Urbach energy of ZnO thin films decreased with increasing sol concentration.

  9. Performance and stability analysis of curcumin dye as a photo sensitizer used in nanostructured ZnO based DSSC

    Science.gov (United States)

    Sinha, D.; De, D.; Ayaz, A.

    2018-03-01

    Environmental friendly natural dye curcumin extracted from low-cost Curcumina longa stem is used as a photo-sensitizer for the fabrication of ZnO-based dye-sensitized solar cells (DSSC). Nanostructured ZnO is fabricated on a transparent conducting glass (TCO), using a cost-effective chemical bath deposition technique. Scanning electron microscopic images show hexagonal patterned ZnO nano-towers decorated with several nanosteps. The average length of ZnO nano-tower is 5 μm and diameter is 1.2 μm. The UV-Vis spectroscopic study of the curcumin dye is used to understand the light absorption behavior as well as band gap energy of the extracted natural dye. The dye shows wider absorption band-groups over 350-470 nm and 500-600 nm with two peaks positioned at 425 nm and 525 nm. The optical band gap energy and energy band position of the dye is derived which supports its stability and high electron affinity that makes it suitable for light harvesting and effortless electron transfer from dye to the semiconductor or interface between them. FTIR spectrum of curcumin dye-sensitized ZnO-based DSSC shows the presence of anchoring groups and colouring constitutes. The I-V and P-V curves of the fabricated DSSC are measured under simulated light (100 mW/cm2). The highest visible light to electric conversion efficiency of 0.266% (using ITO) and 0.33% (using FTO) is achieved from the curcumin dye-sensitized cell.

  10. Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition

    Science.gov (United States)

    Luo, Caiqin; Ho, Lok-Ping; Azad, Fahad; Anwand, Wolfgang; Butterling, Maik; Wagner, Andreas; Kuznetsov, Andrej; Zhu, Hai; Su, Shichen; Ling, Francis Chi-Chung

    2018-04-01

    Sb-doped ZnO films were fabricated on c-plane sapphire using the pulsed laser deposition method and characterized by Hall effect measurement, X-ray photoelectron spectroscopy, X-ray diffraction, photoluminescence, and positron annihilation spectroscopy. Systematic studies on the growth conditions with different Sb composition, oxygen pressure, and post-growth annealing were conducted. If the Sb doping concentration is lower than the threshold ˜8 × 1020 cm-3, the as-grown films grown with an appropriate oxygen pressure could be n˜4 × 1020 cm-3. The shallow donor was attributed to the SbZn related defect. Annealing these samples led to the formation of the SbZn-2VZn shallow acceptor which subsequently compensated for the free carrier. For samples with Sb concentration exceeding the threshold, the yielded as-grown samples were highly resistive. X-ray diffraction results showed that the Sb dopant occupied the O site rather than the Zn site as the Sb doping exceeded the threshold, whereas the SbO related deep acceptor was responsible for the high resistivity of the samples.

  11. Single crystalline ZnO nanorods grown by a simple hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhang Qianfeng [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-09-15

    Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 {mu}m. Raman peak at 437.8 cm{sup -1} displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.

  12. Single crystalline ZnO nanorods grown by a simple hydrothermal process

    International Nuclear Information System (INIS)

    Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Zhang Qianfeng

    2009-01-01

    Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 μm. Raman peak at 437.8 cm -1 displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.

  13. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Adib Abou Chaaya

    2013-10-01

    Full Text Available A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD deposited ultrathin ZnO films in optical sensors and biosensors.

  14. An efficient BTX sensor based on ZnO nanoflowers grown by CBD method

    Science.gov (United States)

    Acharyya, D.; Bhattacharyya, P.

    2015-04-01

    In this paper, sensing performance of ZnO nanoflower like structures derived by chemical bath deposition method (CBD), towards Benzene Toluene and Xylene (BTX) vapors is reported. Relatively higher bath temperature (110 °C) and high pH value (pH: 11) of solution escort to higher growth rate along [0 0 0 1] plane of ZnO, which eventually resulted in pointed edge nanorod based flower like structures after 3 h. After detailed structural characterizations (field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD)), existence of different defect states (viz. oxygen vacancy (Vo), Zinc vacancy (VZn) and Zinc interstitials (Zni)) were authenticated by Photoluminescence (PL) spectroscopy. BTX sensing performance, employing the nanoflowers as the sensing layer, was carried out in resistive mode with two Pd lateral electrodes. The sensor study was performed at different temperatures (150-350 °C) in the concentration range of 0.5-700 ppm of the respective vapors. The highest normalized resistance response (NRR%) was achieved at 200 °C. At this optimum temperature, normalized resistance responses (39.3/92.6%, 45.8/96.9%, and 47.8/99% respectively) were found to be promising towards 0.5/700 ppm of benzene, toluene and xylene. The response time of the sensor towards the target species were also found to be appreciably fast (15 s, 6 s, and 5 s) towards 700 ppm of benzene, toluene and xylene respectively. Detailed sensing mechanism for BTX with such flower like ZnO structures was explained with the help of interaction of band structures (of ZnO) with the corresponding highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the target species.

  15. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    International Nuclear Information System (INIS)

    Kim, Byunggu; Leem, Jae-Young

    2017-01-01

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  16. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2017-01-15

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  17. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    International Nuclear Information System (INIS)

    Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

    2012-01-01

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

  18. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

  19. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  20. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    International Nuclear Information System (INIS)

    Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

  1. RETRACTED: Growth behavior and microstructure evolution of ZnO nanorods grown on Si in aqueous solution

    Science.gov (United States)

    Liou, Sz-Chian; Hsiao, Chi-Sheng; Chen, San-Yuan

    2005-02-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal. This article has been retracted at the request of the Editor-in-Chief. Two papers published in the Journal of Crystal Growth are being retracted due to a case of misrepresentation and reuse of data. A reader of the Journal has brought to our attention the reuse of data within two published papers: Growth behavior and microstructure evolution of ZnO nanorods grown on Si in aqueous solution, Sz-Chian Liou, Chi-Sheng Hsiao, San-Yuan Chen, Journal of Crystal Growth 274 (2005) 438-446. Nucleation and growth behavior of well-aligned ZnO nanorods on organic substrates in aqueous solutions, Chin-Ching Lin, San-Yuan Chen, and Syh-Yuh Cheng, Journal of Crystal Growth 283 (2005) 141-146. In these papers the same transmission electron micrograph was used to describe two different experimental situations and results bringing into question the content of these papers. The reuse of data without proper attribution is not acceptable within the scientific publishing community. In the present case, this is compounded by the attribution of the micrograph to a different experimental situation and drawing, as a result, new conclusions from data obtained from different samples. Such behavior undermines the integrity of the scientific publishing endeavor and is not acceptable. The authors are responsible for the content of their papers.

  2. Growth and Properties of Cl- Incorporated ZnO Nanofilms Grown by Ultrasonic Spray-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Chen, Tingfang; Wang, Aiji; Kong, Lingrui; Li, Yongliang; Wang, Yinshu

    2016-04-01

    Pure and Cl- incorporated ZnO nanofilms were grown by the ultrasonic spray-assisted chemical vapor deposition (CVD) method. The properties of the nanofilms were investigated. The effects of growth temperature and Cl- concentration on the crystal structure, morphology, and optical properties of the nanofilms were studied. Temperature plays an important role in the growth mode and morphology of the pure nanofilms. Preferential growth along the c-axis occurs only at modulating temperature. Lower temperature suppresses the preferential growth, and higher temperature suppresses the growth of the nanofilms. The morphologies of the nanofilms change from lamellar and spherical structures into hexagonal platelets, then into separated nanoparticles with an increase in the temperature. Incorporating Cl- results in the lattice contracting gradually along with c-axis. Grains composing the nanofilms refine, and the optical gap broadens with increasing of Cl- concentration in growth precursor. Incorporating Cl- could reduce oxygen vacancies and passivate the non-irradiated centers, thus enhancing the UV emission and suppressing the visible emission of ZnO nanofilms.

  3. XAFS study on ZnO films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wu Zhihao; Zhou Yinxue; Zhang Xinyi; Fudan Univ., Shanghai; Yu Gencai; Wei Shiqiang; Chen Dongliang

    2004-01-01

    Effects of growth conditions including lattice mismatch and growth temperature on the local structures of ZnO films prepared by MBE have been investigated using fluorescence EXAFS at Zn K edge. The ZnO films were deposited on the Si substrate at 200 degree C and on sapphire substrate at 200 degree C or 300 degree C respectively. The coordination number N in the first shell (number of O atoms immediately surrounding a central Zn atom) remains constant 4 or so for all samples. However, the degree of disorder σ 2 (mean squared displacement) of the local structure is varied with the growth conditions. At the same growth temperature 200 degree C, the degree of disorder is reduced from 0.0080 (Angstrom) 2 to 0.0054 (Angstrom) 2 as the substrate is changed from Si to sapphire; on the same sapphire substrate, the degree of disorder decreases from 0.0054 (Angstrom) 2 to 0.0039 (Angstrom) 2 when the growth temperature is increased from 200 degree C to 300 degree C. Therefore, the higher growth temperature and smaller lattice mismatch can improve the disorder of local structures; the crystal quality of ZnO film will be improved as well . (authors)

  4. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. The defect passivation effect of hydrogen on the optical properties of solution-grown ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N., E-mail: zelalem.urgessa@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Mbulanga, C.M.; Tankio Djiokap, S.R.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Duvenhage, M.M.; Swart, H.C. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA9300 (South Africa)

    2016-01-01

    In this study the effect of annealing environment on both low temperature and room temperature photoluminescence (PL) characteristics of ZnO nanorods, grown in solution, is presented. Particular attention is given to the effect of hydrogen defect passivation and its PL related line. It is shown that, irrespective of annealing ambient, an optimum annealing temperature of 300 °C suppresses the defect related emission and significantly improves the UV emission. By considering the stability of hydrogen impurities, the observed results in the PL spectra are analyzed. There is an observed asymmetric broadening on the low energy side of the bound exciton luminescence in the low temperature annealed samples which is explained by a high concentration of ionized impurities related to hydrogen. This has been attributed primarily to the conversion of hydrogen molecule to substitutional hydrogen on the oxygen site (H{sub O}) as a result of annealing.

  6. The defect passivation effect of hydrogen on the optical properties of solution-grown ZnO nanorods

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Mbulanga, C.M.; Tankio Djiokap, S.R.; Botha, J.R.; Duvenhage, M.M.; Swart, H.C.

    2016-01-01

    In this study the effect of annealing environment on both low temperature and room temperature photoluminescence (PL) characteristics of ZnO nanorods, grown in solution, is presented. Particular attention is given to the effect of hydrogen defect passivation and its PL related line. It is shown that, irrespective of annealing ambient, an optimum annealing temperature of 300 °C suppresses the defect related emission and significantly improves the UV emission. By considering the stability of hydrogen impurities, the observed results in the PL spectra are analyzed. There is an observed asymmetric broadening on the low energy side of the bound exciton luminescence in the low temperature annealed samples which is explained by a high concentration of ionized impurities related to hydrogen. This has been attributed primarily to the conversion of hydrogen molecule to substitutional hydrogen on the oxygen site (H_O) as a result of annealing.

  7. Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

    Science.gov (United States)

    Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

    2016-06-22

    An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

  8. Homoepitaxial Nanostructures of Zinc Oxide

    Directory of Open Access Journals (Sweden)

    Tatiana V. Plakhova

    2015-01-01

    Full Text Available The homoepitaxial ZnO nanostructures (HENS were obtained on different substrates using various techniques. The first type of homoepitaxial ZnO nanorod arrays was grown on Si or ITO substrates by using two alternative sequences: (a seeding → growth from solution → growth from vapor and contrariwise (b seeding → growth from vapor → growth from solution. As follows from transport and cathode luminescence measurements homoepitaxial growth allows enhancing electrical or luminescence properties. The second type of HENS was prepared by growth of vertically or horizontally oriented ZnO nanorod arrays depending on monocrystalline ZnO wafers with [0001] and [10-10] orientation. In all cases the growth occurs along the c-axis of fast growth.

  9. Characterization of Urea Versus hmta in the Preparation of Zinc Oxide NANOSTRUCTURES by Catalytic Immersion Method Grown on Gold-seeded Silicon Substrate

    International Nuclear Information System (INIS)

    Azlinda Abdul Aziz; Khusaimi, Z.; Rusop, M.

    2011-01-01

    Zinc oxide (ZnO) nano structured prepared by immersed method were successfully grown on gold-seeded silicon substrate using Zinc nitrate hexahydrate (Zn(NO 3 ) 2 .6H 2 O) as a precursor was stabilized by a non-toxic urea (CH 4 N 2 O) in a ratio of 1:2 and 1:1 ratio of hexamethylene tetraamine (HMTA). The effect of changing the stabilizer of ZnO solution on the crystal structure, morphology and photoluminescence properties of the resultant ZnO is investigated. X-ray diffraction of the synthesized ZnO shows hexagonal zincite structure. The morphology of the ZnO was characterizing using Field Emission Scanning Electron Microscope (FESEM). The growth of ZnO using urea as stabilizer shows the clusters of ZnO nano flower with serrated broad petals and sharp tips of approximately 25 nm were interestingly formed. ZnO in HMTA showed growth of nano rods. The structures has high surface area, is a potential metal oxide nano structures to be develop for optoelectronic devices and chemical sensors. The formation of ZnO nano structures is found to be significantly affected by the stabilizer. (author)

  10. As-grown graphene/copper nanoparticles hybrid nanostructures for enhanced intensity and stability of surface plasmon resonance

    Science.gov (United States)

    Li, Yun-Fei; Dong, Feng-Xi; Chen, Yang; Zhang, Xu-Lin; Wang, Lei; Bi, Yan-Gang; Tian, Zhen-Nan; Liu, Yue-Feng; Feng, Jing; Sun, Hong-Bo

    2016-11-01

    The transfer-free fabrication of the high quality graphene on the metallic nanostructures, which is highly desirable for device applications, remains a challenge. Here, we develop the transfer-free method by direct chemical vapor deposition of the graphene layers on copper (Cu) nanoparticles (NPs) to realize the hybrid nanostructures. The graphene as-grown on the Cu NPs permits full electric contact and strong interactions, which results in a strong localization of the field at the graphene/copper interface. An enhanced intensity of the localized surface plasmon resonances (LSPRs) supported by the hybrid nanostructures can be obtained, which induces a much enhanced fluorescent intensity from the dye coated hybrid nanostructures. Moreover, the graphene sheets covering completely and uniformly on the Cu NPs act as a passivation layer to protect the underlying metal surface from air oxidation. As a result, the stability of the LSPRs for the hybrid nanostructures is much enhanced compared to that of the bare Cu NPs. The transfer-free hybrid nanostructures with enhanced intensity and stability of the LSPRs will enable their much broader applications in photonics and optoelectronics.

  11. Investigation on Fe-doped ZnO nanostructures prepared by a chemical route

    International Nuclear Information System (INIS)

    Mishra, A.K.; Das, D.

    2010-01-01

    Zn 1-x Fe x O (x = 0.03, 0.05 and 0.07) nanoparticles synthesized by a chemical route were characterized by different techniques. The structural characterization by XRD and TEM confirmed the phase purity of the samples and indicated a reduction in particle size with increase in the dopant (Fe) concentration in ZnO. The optical characterization of the nanoparticles by FTIR, PL and UV-visible spectroscopy confirmed the formation of wurtzite structure and incorporation of Fe in the ZnO lattice. Magnetization measurements by VSM and Faraday balance techniques indicate presence of room temperature ferromagnetism in the Fe-doped ZnO samples. Local environment around the Fe atoms has been probed by 57 Fe Moessbauer spectroscopy and the measured isomer shifts confirmed the charge state of iron as Fe 3+ . Positron annihilation lifetime spectroscopy (PALS) measurements confirm the presence of cation vacancies in the nanoparticles and indicate a reduction of overall defect concentration with incorporation of Fe atoms in the ZnO structure.

  12. Investigation on Fe-doped ZnO nanostructures prepared by a chemical route

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, A.K. [UGC-DAE Consortium for Scientific Research, Kolkata Centre III/LB-8, Bidhannagar, Kolkata 700098 (India); Das, D., E-mail: ddas@alpha.iuc.res.in [UGC-DAE Consortium for Scientific Research, Kolkata Centre III/LB-8, Bidhannagar, Kolkata 700098 (India)

    2010-07-25

    Zn{sub 1-x}Fe{sub x}O (x = 0.03, 0.05 and 0.07) nanoparticles synthesized by a chemical route were characterized by different techniques. The structural characterization by XRD and TEM confirmed the phase purity of the samples and indicated a reduction in particle size with increase in the dopant (Fe) concentration in ZnO. The optical characterization of the nanoparticles by FTIR, PL and UV-visible spectroscopy confirmed the formation of wurtzite structure and incorporation of Fe in the ZnO lattice. Magnetization measurements by VSM and Faraday balance techniques indicate presence of room temperature ferromagnetism in the Fe-doped ZnO samples. Local environment around the Fe atoms has been probed by {sup 57}Fe Moessbauer spectroscopy and the measured isomer shifts confirmed the charge state of iron as Fe{sup 3+}. Positron annihilation lifetime spectroscopy (PALS) measurements confirm the presence of cation vacancies in the nanoparticles and indicate a reduction of overall defect concentration with incorporation of Fe atoms in the ZnO structure.

  13. Temperature-dependence on the structural, optical, andparamagnetic properties of ZnO nanostructures

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2014-02-01

    Full Text Available of the phonon peak at 580 cm(sup-1) was gradually enhanced with the increase of annealing temperature. X-ray diffraction and X-ray photoelectron spectroscopy (XPS) measurements showed that all ZnO samples possess a typical wurtzite structure with high...

  14. Nanostructured ZnO thin films prepared by sol–gel spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

    2014-10-30

    Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

  15. Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO{sub 2} and on Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Vega, Nadia Celeste; Comedi, David [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Fisica del Solido; Audebert, Fernando [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Tirado, Monica, E-mail: mtirado@herrera.unt.edu.ar [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Nanomateriales y de Propiedades Dielectricas; Rodriguez, Andres; Rodriguez, Tomas [Universidad Politecnica de Madrid (ETSIT/UPM), Madrid (Spain). Escuela Tecnica Superior de Ingenieros de Telecomucacion. Tecnologia Electronica; Hughes, Gareth M.; Grovenor, Chris R.M. [University of Oxford, Parks Road, OX (United Kingdom). Dept. of Materials

    2013-11-01

    ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO{sub 2} thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 Degree-Sign C and 720 Degree-Sign C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO{sub 2} interfaces. Photoluminescence, electrical conductance and photo conductance of ZnO-NFN was studied for the sample grown on SiO{sub 2}. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances. (author)

  16. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    Science.gov (United States)

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

  17. Imprinted ZnO nanostructure-based electrochemical sensing of calcitonin: A clinical marker for medullary thyroid carcinoma

    International Nuclear Information System (INIS)

    Patra, Santanu; Roy, Ekta; Madhuri, Rashmi; Sharma, Prashant K.

    2015-01-01

    Highlights: • Molecular imprinting-based sensor for medullary thyroid carcinoma marker was developed. • ZnO nanostructure was used as a platform for synthesis of imprinted polymer. • Imprinted polymer was prepared by ARGET–ATRP method. • A novel and biocompatible tyrosine amino acid derivative was used as monomer. • Linear working range is found from 9.99 ng L −1 to 7.919 mg L −1 with LOD 3.09 ng L −1 . - Abstract: The present work describes an exciting method for the selective and sensitive determination of calcitonin in human blood serum samples. Adopting the surface molecular imprinting technique, a calcitonin-imprinted polymer was prepared on the surface of the zinc oxide nanostructure. Firstly, a biocompatible tyrosine derivative as a monomer was grafted onto the surface of zinc oxide nanostructure followed by their polymerization on vinyl functionalized electrode surface by activator regenerated by electron transfer–atom transfer radical polymerization (ARGET–ATRP) technique. Such sensor can predict the small change in the concentration of calcitonin in the human body and it may also consider to be as cost-effective, renewable, disposable, and reliable for clinical studies having no such cross-reactivity and matrix effect from real samples. The morphologies and properties of the proposed sensor were characterized by scanning electron microscopy, cyclic voltammetry, difference pulse voltammetry and chronocoulometry. The linear working range was found to be 9.99 ng L −1 to 7.919 mg L −1 and the detection limit as low as 3.09 ± 0.01 ng L −1 (standard deviation for three replicate measurements) (S/N = 3)

  18. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Čížek, J.; Kužel, R.; Bulíř, Jiří; Lančok, Ján; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.

    2012-01-01

    Roč. 45, č. 22 (2012), 1-12 ISSN 0022-3727 R&D Projects: GA ČR(CZ) GAP108/11/0958; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : ZnO thin film * pulsed laser deposition * x-ray diffraction positron implantation spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://dx.doi.org/10.1088/0022-3727/45/22/225101

  19. Pyrolysis and auto-gasification of black liquor in presence of ZnO: An integrated process for Zn/ZnO nanostructure production and bioenergy generation

    International Nuclear Information System (INIS)

    Maciel, A.V.; Job, A.E.; Mussel, W.N.; Pasa, V.M.D.

    2012-01-01

    This study presents a new process for valorisation of black liquor into gases that are used to reduce ZnO and promote zinc nanosheet synthesis, besides energy generation. During the black liquor pyrolysis and auto-gasification, gases evolve, especially carbon monoxide, and promote ZnO reduction with Zn (v) release. The metal is condensed yielding zinc nanosheets, with partial surface re-oxidation in presence of carbon dioxide. The process was investigated at the micro scale using thermal analyses (TG/DTG/DTA) and the gases evolved were analysed by FTIR spectroscopy (TG/FTIR). The process was also studied in laboratory scale using a tubular electric furnace. The black liquor/ZnO mixture was placed at the quartz tube and the sample was heated to 900 °C at 10 °C/min, and the temperature was held at 900 °C for 1 h. The nanostructures growth was catalyst-free, without pressure reduction or a template, at temperatures lower than those required in the classical carbothermal reduction of ZnO with fossil carbon. The nanostructures were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and infrared spectroscopy (FTIR). One mechanism was presented in an attempt to explain the synthesis of Zn/ZnO nanosheets that are crystalline. This green and innovative process has potential use at the industry due to its operational conditions, low costs and technological importance of Zn and ZnO nanostructures. -- Graphical abstract: Display Omitted Highlights: ► Black liquor and ZnO mixture were submitted to a heat treatment until 900 °C. ► The black liquor suffered pyrolysis and auto-gasification. ► ZnO is reduced by CO yielding Zn v , that is condensed generating Zn/ZnO nanosheets. ► The nanostructures are characterized and a mechanism of reactions is presented. ► The new process can produce energy and nanostructures in large scale.

  20. Recent improvements on TiO2 and ZnO nanostructure photoanode for dye sensitized solar cells: A brief review

    Directory of Open Access Journals (Sweden)

    Jamalullail Nurnaeimah

    2017-01-01

    Full Text Available Dye sensitized solar cell (DSSC is a promising candidate for a low cost solar harvesting technology as it promised a low manufacturing cost, ease of fabrication and reasonable conversion efficiency. Basic structure of DSSC consists of photoanode, dye, electrolyte and counter electrode. Photoanode plays an important role for a DSSC as it supports the dye molecules and helps in the electron transfer that will determine the energy conversion efficiency. This paper emphasizes the various improvements that had been done on the TiO2 and ZnO photoanode nanostructures synthesized through thermal method. For overall comparisons, ZnO nanoflowers photoanode had achieved the highest energy conversion efficiency of 4.7% due to its ability of internal light scattering that had increased the electron transportation rate. This has made ZnO as a potential candidate to replace TiO2 as a photoanode material in DSSC.

  1. Preparation and characterizations of CuO doped ZnO nano-structure for the photocatalytic degradation of 4-chlorophenol under visible light

    Directory of Open Access Journals (Sweden)

    Afsaneh Shokri

    2016-12-01

    Full Text Available In the present investigation, a ZnO nanostructure was synthesized by means of precipitation and sonochemical methods. The X-ray diffraction (XRD pattern indicated that the wurtzite structure of ZnO had a hexagonal symmetry and there was no impurity. The average ZnO particles crystallite size was calculated at about 41 nm. The SEM and TEM images revealed nanostructure ZnO particles with a cauliflower-like and rod morphology with dimensions of 85, 79 and 117 nm. In order to investigate the increment of ZnO photoactivity under visible light, the CuO doped ZnO nanostructures were fabricated by a wet impregnation method using copper oxide as the copper source and ZnO as the precursor. The XRD analysis confirmed that the CuO phase was present in the as-prepared sample and the average size of nano crystalline decreased to about 36 nm. The DRS spectra indicated the extended absorption of CuO-ZnO to the visible range as a result of band gap reduction to 2.9 eV (in comparison of 3.2 eV in ZnO. In order to investigate the photocatalytic activity of the synthesized photocatalyst, the degradation of 4-Chlorophenol under visible light was performed. Sixteen experiments using full factorial were executed by adjusting four parameters (amount of catalyst, initial concentration of 4-Chlorophenol, pH, and time of irradiation. An empirical expression was proposed and successfully used to model the photocatalytic process with a high correlation, and an optimal experimental region was also obtained. According to the developed model for degradation and the subsequent ANOVA test using Design Expert software, the time of irradiation with a 46.57% effect played the most important role in the photocatalytic activity, while the influences of parameters on each other were negligible. Optimal experimental conditions for 4-Chlorophenol concentration (0.01 g/L were found at an initial pH =8 and a catalyst loading of 0.07 g/L. The results indicated that CuO-ZnO can remove 95

  2. Characterization of ZnO film grown on polycarbonate by atomic layer deposition at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Gyeong Beom; Han, Gwon Deok; Shim, Joon Hyung; Choi, Byoung-Ho, E-mail: bhchoi@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-707 (Korea, Republic of)

    2015-01-15

    ZnO is an attractive material for use in various technological products such as phosphors, gas sensors, and transparent conductors. Recently, aluminum-doped zinc oxide has received attention as a potential replacement for indium tin oxide, which is one of the transparent conductive oxides used in flat panel displays, organic light-emitting diodes, and organic solar cells. In this study, the characteristics of ZnO films deposited on polycarbonate (PC) substrates by atomic layer deposition (ALD) are investigated for various process temperatures. The growth mechanism of these films was investigated at low process temperatures using x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). XRD and XPS were used to determine the preferred orientation and chemical composition of the films, respectively. Furthermore, the difference of the deposition mechanisms on an amorphous organic material, i.e., PC substrate and an inorganic material such as silicon was discussed from the viewpoint of the diffusion and deposition of precursors. The structure of the films was also investigated by chemical analysis in order to determine the effect of growth temperature on the films deposited by ALD.

  3. A Resistive Humidity Sensor Based on Nanostructured WO3-ZnO Composites

    Directory of Open Access Journals (Sweden)

    Karunesh Tiwari

    2011-11-01

    Full Text Available Paper reports morphological and humidity sensing studies of WO3 and WO3-ZnO composite pellets prepared in the weight % ratio of 10:1, 4:1 and 2:1 by solid-state reaction route. The pellets have been annealed at temperatures of 300-500 °C. XRD pattern shows peaks of ZnWO4 formed due to solid state reaction between WO3 and ZnO. SEM micrographs show that the sensing elements manifest porous structure. Granulation and tendency to agglomerate seen in the SEM micrograph are due to the presence of zinc ions in ZnWO4. Nanoparticles are having their sizes in the range 37-182 nm. The average Kelvin radius at 20˚C room temperature is 27 Ả. Humidity sensing application of the pellets has been studied in a humidity control cabinet. It is observed that as relative humidity increases, there is decrease in the resistance of pellets in the range 10-85 % RH. Sensing element of WO3-ZnO in 2:1 weight % ratio shows best results in 10-85 % relative humidity range. The average sensitivity of this sample is 1.25 MΩ/%RH. This sensing element shows good reproducibility, low hysteresis and less effect of aging.

  4. Photoluminescence study of ZnO structures grown by aqueous chemical growth

    International Nuclear Information System (INIS)

    Kenanakis, G.; Androulidaki, M.; Vernardou, D.; Katsarakis, N.; Koudoumas, E.

    2011-01-01

    ZnO micro-structures were deposited by aqueous chemical growth on Si (100) substrates, their morphology and size depending on the growth period. Characterization of the structures was performed using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. Photoluminescence spectra recorded at 18 and 295 K for 325 nm CW excitation indicated that these are strongly affected by the morphology of the structures. Rods and tubes emit stronger UV radiation, in contrast to stronger yellow-green emission observed for flower-like structures. A red shift of the UV emission was found for increasing input power, while, thermal annealing of the samples induced stimulated emission for quite high excitation intensities.

  5. Synthesis and properties of ZnO nanorods as ethanol gas sensors

    International Nuclear Information System (INIS)

    Mirabbaszadeh, K; Mehrabian, M

    2012-01-01

    Uniform ZnO nanorods were synthesized via the sol-gel process under mild conditions in which different ZnO nanostructures have been prepared by changing the pH of growth solution. It was seen that the optimum nanorods were grown at pH 11.33. The prepared ZnO nanostructures and morphologies were characterized by x-ray diffraction and scanning electron microscopy measurements. The ZnO one-dimensional nanostructures were found to have a wurtzite hexagonal crystalline structure and grow along the [001] direction. The optimum nanorods were about 1 μm in length and less than 100 nm in diameter. The ZnO nanostructures have been tested for different concentrations and different operating temperatures for ethanol vapor in air and the surface resistance of the sensors has been evaluated as a function of different parameters. The gas sensor fabricated from ZnO nanorods grown in solution with a special pH exhibited good performance. The sensor response to 5000 ppm ethanol was up to about 2.5 at the operating temperature of 300 °C. The differences in gas-sensing performance between the sensors were analyzed based on the defects created in the nanorods during their fast growth. The correlations between material structures and the properties of the gas sensors are discussed.

  6. Ultra-Fast Microwave Synthesis of ZnO Nanorods on Cellulose Substrates for UV Sensor Applications

    Directory of Open Access Journals (Sweden)

    Ana Pimentel

    2017-11-01

    Full Text Available In the present work, tracing and Whatman papers were used as substrates to grow zinc oxide (ZnO nanostructures. Cellulose-based substrates are cost-efficient, highly sensitive and environmentally friendly. ZnO nanostructures with hexagonal structure were synthesized by hydrothermal under microwave irradiation using an ultrafast approach, that is, a fixed synthesis time of 10 min. The effect of synthesis temperature on ZnO nanostructures was investigated from 70 to 130 °C. An Ultra Violet (UV/Ozone treatment directly to the ZnO seed layer prior to microwave assisted synthesis revealed expressive differences regarding formation of the ZnO nanostructures. Structural characterization of the microwave synthesized materials was carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The optical characterization has also been performed. The time resolved photocurrent of the devices in response to the UV turn on/off was investigated and it has been observed that the ZnO nanorod arrays grown on Whatman paper substrate present a responsivity 3 times superior than the ones grown on tracing paper. By using ZnO nanorods, the surface area-to-volume ratio will increase and will improve the sensor sensibility, making these types of materials good candidates for low cost and disposable UV sensors. The sensors were exposed to bending tests, proving their high stability, flexibility and adaptability to different surfaces.

  7. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  8. Role of low O 2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

    Science.gov (United States)

    Pandis, Ch.; Brilis, N.; Tsamakis, D.; Ali, H. A.; Krishnamoorthy, S.; Iliadis, A. A.

    2006-06-01

    Undoped ZnO thin films have been grown on (100) Si substrates by pulsed laser deposition. The effect of growth parameters such as temperature, O 2 partial pressure and laser fluence on the structural and electrical properties of the films has been investigated. It is shown that the well-known native n-type conductivity, attributed to the activation of hydrogenic donor states, exhibits a conversion from n-type to p-type when the O 2 partial pressure is reduced from 10 -4 to 10 -7 Torr at growth temperatures lower than 400 °C. The p-type conductivity could be attributed to the dominant role of the acceptor Zn vacancies for ZnO films grown at very low O 2 pressures.

  9. Photoluminescence properties of ZnO thin films grown by using the hydrothermal technique

    International Nuclear Information System (INIS)

    Sahoo, Trilochan; Jang, Leewoon; Jeon, Juwon; Kim, Myoung; Kim, Jinsoo; Lee, Inhwan; Kwak, Joonseop; Lee, Jaejin

    2010-01-01

    The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 .deg. C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 ± 0.5 meV from the temperature dependent quenching of the integral intensities.

  10. ZnO nanowires coated stainless steel meshes as hierarchical photocatalysts for catalytic photodegradation of four kinds of organic pollutants

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Fu-Hsiang; Lo, Wei-Ju [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan (China); Chang, Yu-Cheng, E-mail: ychang0127@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China); Guo, Jin-You; Chen, Chien-Ming [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China)

    2016-09-05

    ZnO nanostructures were grown on the stainless steel mesh substrates using an aqueous chemical growth method. The different additives (such as 1,3-diaminopropane and polyethyleneimine) can be used to control the morphology of ZnO nanostructures. ZnO nanowires exhibit very prominent green emission and week UV emission from defect and band gap in the cathodoluminescence spectrum, respectively. The different morphology of ZnO nanostructures on the stainless steel mesh substrates can be used to irradiate UV light for the photocatalytic degradation of four kinds of organic pollutants, such as methylene blue, rhodamine 6G, methyl orange, and 4-nitrophenol. The ZnO nanowires can provide a higher surface-to-volume ratio and stronger defect emission, resulting in their highest photocatalytic performance in 10 W UV light irradiation. The ZnO nanowire arrays on the stainless steel mesh substrates provide a large-scale, facile, low-cost, high surface area, and high photocatalytic efficiency, which shall be of significant value for practical applications of the decomposition of environment pollutants and reusing of wastewater treatment. - Highlights: • ZnO NWs were grown on the stainless steel mesh by aqueous chemical growth method. • Longer ZnO NW arrays have been grown at short reaction time (2 h). • ZnO NWs revealed green emission from surface defect in the CL spectrum. • The different morphologies of ZnO were evaluated organic pollutant degradation. • ZnO NWs were also exhibited great photocatalytic activity and reusability.

  11. Linear and nonlinear optics, dynamics, and lasing in ZnO bulk and nanostructures

    International Nuclear Information System (INIS)

    Klingshirn, C.; Fallert, J.; Gogolin, O.; Wissinger, M.; Hauschild, R.; Hauser, M.; Kalt, H.; Zhou, H.

    2008-01-01

    In linear optics, we report on measurements of the absolute external quantum efficiency of bulk ZnO and powders using an integrating sphere. At low temperature the near band edge emission efficiency can reach 0.15 in the best samples. For deep center luminescence this value may be even higher. When going to room temperature (RT) the quantum efficiency drops by about one order of magnitude. From time resolved luminescence measurements we deduce the lifetime of the free and bound excitons to be in the sub ns regime and find for the latter a systematic increase with increasing binding energy. Concerning lasing, we discuss the role of excitonic processes and the recombination in an inverted electron-hole plasma (EHP). While excitonic processes seem well justified at lower temperatures and densities, doubts arise concerning the concept of excitonic lasing at RT in ZnO. The densities at laser threshold at RT are frequently close to the Mott density or above but below the density at which population inversion in an EHP is reached. We suggest alternative processes which can explain stimulated emission in this density regime in an EHP at RT

  12. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  13. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    International Nuclear Information System (INIS)

    Borisova, Svetlana

    2012-01-01

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  14. Fabrication and in-situ STM investigation of growth dynamics of semiconductor nanostructures grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Borisova, Svetlana

    2012-05-23

    Modern development of information technologies requires an introduction of new fundamental concepts, in order to create more efficient devices and to decrease their size. One of the most promising ways is to increase the functionality of silicon by integrating novel materials into Si-based production. This PhD thesis reports on the fabrication and investigation of the growth of semiconductor nanostructures on Si substrates by molecular beam epitaxy (MBE). In-situ scanning tunneling microscopy (STM) is a powerful technique in order to study morphological and electronic properties of the grown structures directly under ultra high vacuum (UHV) conditions. It is shown that the combination of MBE and in-situ STM enables the study of nucleation and growth dynamics at the atomic scale. It provides us with numerous information concerning the nucleation mechanism, the growth mode of the structures, adatom kinetics, influence of the lattice mismatch between the substrate and the grown structure as well as formation and morphology of crystal defects. The first part of the thesis focuses on the experimental realization based upon an existing setup. The construction of an in-situ UHV STM compatible with the MBE cluster and the technical improvement of the STM setup are described. Subsequently, test measurements are performed on the technologically most important surfaces, Ge (100) and Si (111). The second part of the thesis is dedicated to ordered small-period arrays of self-assembled Ge quantum dots (QDs) grown on pre-patterned Si (100) substrates. Small-period Ge QD crystals are highly interesting since band structure calculations indicate coupled electronic states of the QDs in the case of the small lateral period of approximately 30 nm. Small-period hole patterns with a period of 56 nm are fabricated by e-beam lithography on Si substrates. The evolution of the hole morphology during the in-situ pre-growth annealing and the Si buffer layer growth are studied. Deposition of 5

  15. Synthesis of Cu Doped ZnO Nanostructures for Ultra Violet Sensing

    OpenAIRE

    Nazar Abbas SHAH; Muhammad ABID; Muhammad AMIN; Rahat AFRIN; Syed Zafar ILYAS

    2015-01-01

    This paper mainly focused on the synthesis of zinc oxide nanostructures, their characterization and their ultra violet light sensing response at room temperature. Nanowires, nanobelts and nanosheets were synthesized by varying doping material copper by using vapor transport technique governed by the vapor-liquid-solid or vapor-solid mechanisms. The structural, morphological and optical characterization was carried out using X-ray diffraction, scanning electron microscopy, energy dispersive X-...

  16. Aqueous chemical growth of free standing vertical ZnO nanoprisms, nanorods and nanodiskettes with improved texture co-efficient and tunable size uniformity

    Energy Technology Data Exchange (ETDEWEB)

    Ram, S.D.G. [Bharath Niketan Engineering College, Department of Physics, Aundipatti (India); Ravi, G.; Mahalingam, T. [Alagappa University, Department of Physics, Karaikudi (India); Athimoolam, A. [Fatima Michael College of Engineering and Technology, Department of Physics, Madurai (India); Kulandainathan, M.A. [Central Electro Chemical Research Institute, Karaikudi (India)

    2011-12-15

    Tuning the morphology, size and aspect ratio of free standing ZnO nanostructured arrays by a simple hydrothermal method is reported. Pre-coated ZnO seed layers of two different thicknesses ({approx}350 nm or 550 nm) were used as substrates to grow ZnO nanostructures for the study. Various parameters such as chemical ambience, pH of the solution, strength of the Zn{sup 2+} atoms and thickness of seed bed are varied to analyze their effects on the resultant ZnO nanostructures. Vertically oriented hexagonal nanorods, multi-angular nanorods, hexagonal diskette and popcorn-like nanostructures are obtained by altering the experimental parameters. All the produced nanostructures were analysed by X-ray powder diffraction analysis and found to be grown in the (002) orientation of wurtzite ZnO. The texture co-efficient of ZnO layer was improved by combining a thick seed layer with higher cationic strength. Surface morphological studies reveal various nanostructures such as nanorods, diskettes and popcorn-like structures based on various preparation conditions. The optical property of the closest packed nanorods array was recorded by UV-VIS spectrometry, and the band gap value simulated from the results reflect the near characteristic band gap of ZnO. The surface roughness profile taken from the Atomic Force Microscopy reveals a roughness of less than 320 nm. (orig.)

  17. The Influence of Shape on the Output Potential of ZnO Nanostructures: Sensitivity to Parallel versus Perpendicular Forces

    Directory of Open Access Journals (Sweden)

    José Cardoso

    2018-05-01

    Full Text Available With the consistent shrinking of devices, micro-systems are, nowadays, widely used in areas such as biomedics, electronics, automobiles, and measurement devices. As devices shrunk, so too did their energy consumptions, opening the way for the use of nanogenerators (NGs as power sources. In particular, to harvest energy from an object’s motion (mechanical vibrations, torsional forces, or pressure, present NGs are mainly composed of piezoelectric materials in which, upon an applied compressive or strain force, an electrical field is produced that can be used to power a device. The focus of this work is to simulate the piezoelectric effect in different ZnO nanostructures to optimize the output potential generated by a nanodevice. In these simulations, cylindrical nanowires, nanomushrooms, and nanotrees were created, and the influence of the nanostructures’ shape on the output potential was studied as a function of applied parallel and perpendicular forces. The obtained results demonstrated that the output potential is linearly proportional to the applied force and that perpendicular forces are more efficient in all structures. However, nanotrees were found to have an increased sensitivity to parallel applied forces, which resulted in a large enhancement of the output efficiency. These results could then open a new path to increase the efficiency of piezoelectric nanogenerators.

  18. Snowflake-Shaped ZnO Nanostructures-Based Gas Sensor for Sensitive Detection of Volatile Organic Compounds

    Directory of Open Access Journals (Sweden)

    Tianli Han

    2017-01-01

    Full Text Available Volatile organic compounds (VOCs have been considered severe risks to human health. Gas sensors for the sensitive detection of VOCs are highly required. However, the preparation of gas-sensing materials with a high gas diffusion performance remains a great challenge. Here, through a simple hydrothermal method accompanied with a subsequent thermal treatment, a special porous snowflake-shaped ZnO nanostructure was presented for sensitive detection of VOCs including diethyl ether, methylbenzene, and ethanol. The fabricated gas sensors exhibit a good sensing performance including high responses to VOCs and a short response/recovery time. The responses of the ZnO-based gas sensor to 100 ppm ethanol, methylbenzene, and diethyl ether are about 27, 21, and 11, respectively, while the response times to diethyl ether and methylbenzene are less than 10 seconds. The gas adsorption-desorption kinetics is also investigated, which shows that the gas-sensing behaviors to different target gases are remarkably different, making it possible for target recognition in practical applications.

  19. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

    2008-01-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  20. Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

    Science.gov (United States)

    Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

    2017-11-01

    Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

  1. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  2. Correlation of Defect-Related Optoelectronic Properties in Zn5(OH6(CO32/ZnO Nanostructures with Their Quasi-Fractal Dimensionality

    Directory of Open Access Journals (Sweden)

    J. Antonio Paramo

    2015-01-01

    Full Text Available Hydrozincite (Zn5(OH6(CO32 is, among others, a popular precursor used to synthesize nanoscale ZnO with complex morphologies. For many existing and potential applications utilizing nanostructures, performance is determined by the surface and subsurface properties. Current understanding of the relationship between the morphology and the defect properties of nanocrystalline ZnO and hydrozincite systems is still incomplete. Specifically, for the latter nanomaterial the structure-property correlations are largely unreported in the literature despite the extensive use of hydrozincite in the synthesis applications. In our work, we addressed this issue by studying precipitated nanostructures of Zn5(OH6(CO32 with varying quasi-fractal dimensionalities containing relatively small amounts of a ZnO phase. Crystal morphology of the samples was accurately controlled by the growth time. We observed a strong correlation between the morphology of the samples and their optoelectronic properties. Our results indicate that a substantial increase of the free surface in the nanocrystal samples generates higher relative concentration of defects, consistent with the model of defect-rich surface and subsurface layers.

  3. Microwave-assisted synthesis of C-doped TiO2 and ZnO hybrid nanostructured materials as quantum-dots sensitized solar cells

    Science.gov (United States)

    Rangel-Mendez, Jose R.; Matos, Juan; Cházaro-Ruiz, Luis F.; González-Castillo, Ana C.; Barrios-Yáñez, Guillermo

    2018-03-01

    The microwave-assisted solvothermal synthesis of C-doped TiO2 and ZnO hybrid materials was performed. Saccharose, titanium isopropoxide and zinc acetate were used as organic and inorganic sources for the synthesis. The influence of temperature and reaction time on the textural and optoelectronic properties of the hybrid materials was verified. Carbon quantum-dots of TiO2 and ZnO nanostructured spheres were obtained in a second pot by controlled calcination steps of the precursor hybrid materials. A carefully characterization by adsorption-desorption N2 isotherms, XRD, XPS, SEM, UV-vis/DR and electro- and photo-electrochemistry properties of the carbon quantum-dots TiO2 and ZnO spheres was performed. The photoelectrochemical activity of TiO2-C and ZnO-C films proved to be dependent on the conditions of synthesis. It was found a red-shift in the energy band gap of the semiconductors with values of 3.02 eV and 3.13 eV for the TiO2-C and ZnO-C, respectively, clearly lower than those on bare semiconductors, which is associated with the C-doping effect. From the photo-electrochemistry characterization of C-doped TiO2 and ZnO films can be concluded that the present materials have potential applications as photoelectrodes for quantum-dots sensitized solar cells.

  4. Electrical characterization of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A.C.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

    2007-05-15

    Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10{sup -5} {omega} cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    International Nuclear Information System (INIS)

    Pervolaraki, M.; Komninou, Ph.; Kioseoglou, J.; Athanasopoulos, G.I.; Giapintzakis, J.

    2013-01-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10 −3 Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated

  6. Si nanostructures grown by picosecond high repetition rate pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pervolaraki, M., E-mail: pervolaraki@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Komninou, Ph.; Kioseoglou, J. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Athanasopoulos, G.I. [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus); Giapintzakis, J., E-mail: giapintz@ucy.ac.cy [Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 75 Kallipoleos Av., PO Box 20537, 1678 Nicosia (Cyprus)

    2013-08-01

    One-step growth of n-doped Si nanostructures by picosecond ultra fast pulsed laser deposition at 1064 nm is reported for the first time. The structure and morphology of the Si nanostructures were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. Transmission electron microscopy studies revealed that the shape of the Si nanostructures depends on the ambient argon pressure. Fibrous networks, cauliflower formations and Si rectangular crystals grew when argon pressure of 300 Pa, 30 Pa and vacuum (10{sup −3} Pa) conditions were used, respectively. In addition, the electrical resistance of the vacuum made material was investigated.

  7. Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

    NARCIS (Netherlands)

    Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

    Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present

  8. ZnO nanostructures with tunable visible luminescence: Effects of kinetics of chemical reduction and annealing

    Directory of Open Access Journals (Sweden)

    R. Raji

    2017-03-01

    Full Text Available Highly crystalline ZnO nanoparticles were synthesized using a co-precipitation method. The morphology and optical properties of these nanoparticles are found to be highly sensitive to the growth parameters such as the concentration of reducing agent and annealing temperature. Indeed, the concentration of the reducing agent can alter the morphology of nanoparticles from quasi-spherical to rod-like and then to flower-like structures. Attempts were made to tune the emission wavelength over the visible region by varying the kinetics of chemical reduction and annealing. The possibility of tuning the emission in a visible range from orange to red and then to green by changing the nature of defects by annealing is also reported. Analysis of the Raman spectrum, with its intensity observed at 580 cm−1 corresponding to E1 (LO mode, revealed that the kinetics and thermodynamics of formation and growth of these nanoparticles determined the nature and density of the probable defects such as oxygen vacancies, interstitial zinc atoms and their complexes.

  9. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

    Science.gov (United States)

    Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

    2018-04-01

    This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

  10. Morphologically controlled ZnO nanostructures as electron transport materials in polymer-based organic solar cells

    International Nuclear Information System (INIS)

    Choi, Kyu-Chae; Lee, Eun-Jin; Baek, Youn-Kyoung; Lim, Dong-Chan; Kang, Yong-Cheol; Kim, Yang-Do; Kim, Ki Hyun; Kim, Jae Pil; Kim, Young-Kuk

    2015-01-01

    Highlights: • Enhanced efficiency of solar cells using ZnO nanocrystals for charge transport. • Morphology of the charge transport layer is controlled. • Mixture of nanoparticles and nanorods are advantageous for cell efficiency. - ABSTRACT: The morphology of ZnO electron transport layers based on ZnO nanoparticles were modified with incorporation of ZnO nanorods via their co-deposition from mixed colloidal solution of nanoparticles and nanorods. In particular, the short circuit current density and the fill factor of the constructed photovoltaic device were simultaneously improved by applying mixture of ZnO nanoparticles and nanorods. As a result, a large improvement of power conversion efficiency up to 9% for the inverted organic solar cells having a blend of low band gap polymers and fullerene derivative as an active layer was demonstrated with the morphologically controlled ZnO electron transport layer.

  11. Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

    International Nuclear Information System (INIS)

    Zafar, Muhammad; Yun, Ju-Young; Kim, Do-Heyoung

    2017-01-01

    Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

  12. Performance of inverted polymer solar cells with randomly oriented ZnO nanorods coupled with atomic layer deposited ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zafar, Muhammad [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of); Yun, Ju-Young [Center for Vacuum, Korea Research Institute of Standards and Science, 267 Gajeong-ro, Daejeon 305-600 (Korea, Republic of); Kim, Do-Heyoung, E-mail: kdhh@chonnam.ac.kr [School of Chemical Engineering, Chonnam National University, 300 Youngbong-dong, Gwangju 500-757 (Korea, Republic of)

    2017-03-15

    Highlights: • Hydrothermally grown, randomly oriented, and low areal density ZnO nanorods have been successfully adopted as the electron transport layer in inverted organic solar cells. • The addition of atomic layer deposited ZnO on the ZnO nanorods effectively enhance the photovoltaic performances of inverted organic solar cells. • The inverted organic solar cells with 5 nm thick-ALD ZnO showed the highest power conversion efficiency of 3.08%, which is an enhancement of approximately 80% compared to the cells without the ALD ZnO layer (PCE = 1.67%). - Abstract: Nanostructuring of the electron transport layer (ETL) in organic photovoltaic cells (OPV) is of great interest because it increases the surface area of the cell and electron transport. In this work, hydrothermally grown, randomly oriented, and low areal density ZnO nanorods (NRs) have been adopted as the ETL, and the effect of adding atomic layer deposited (ALD) ZnO on the ZnO NRs on the inverted organic solar cell performance has been investigated. The fabricated inverted organic solar cell with 5-nm-thick ALD-ZnO grown on the ZnO NRs showed the highest power conversion efficiency (PCE) of 3.08%, which is an enhancement of 85% from that of the cell without ALD-ZnO (PCE = 1.67%). The ultrathin ALD-ZnO was found to act as a curing layer of the surface defects on the hydrothermally grown ZnO NRs, resulting in an improvement in photovoltaic performance.

  13. Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

    Science.gov (United States)

    Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

    2015-05-01

    Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

  14. Using reflectance anisotropy spectroscopy to characterize capped silver nanostructures grown on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fleischer, K.; Jacob, J.; McGilp, J.F. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Chandola, S. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland); ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Strasse 9, 12489 Berlin (Germany); Esser, N. [ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Strasse 9, 12489 Berlin (Germany)

    2008-07-01

    Using the single domain Si(111)-3 x 1-Ag surface as a template, room temperature deposition of two or more monolayers of Ag leads to the formation of metallic nanostructures. Reflectance anisotropy spectroscopy (RAS) in the infrared (IR) spectral region is used to analyse the anisotropic conductivity of the structures. The anisotropy is found to be influenced by the offcut angle of the substrate, and hence the terrace width. The Ag nanostructures were capped with Si to form a near-IR transparent protecting layer. The samples are stable to exposure to ambient conditions for significant periods. The RAS spectra are compared to model calculations, which support the conclusion that the buried metallic Ag nanostructures survive the capping process. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Optical and electro-catalytic properties of bundled ZnO nanowires grown on a ITO substrate

    International Nuclear Information System (INIS)

    Xia Cao; Wang Ning; Wang Long

    2010-01-01

    Bundled wurtzite zinc oxide (ZnO) nanowires were fabricated in a facile manner on an ITO-conducting substrate via a microemulsion route without using any hard template or external electric/magnetic field. Structure and properties of the as-prepared ZnO electrode were investigated using scanning electron microscopy, X-ray diffraction, photoluminescence, Raman spectroscopy, as well as electrochemical tests. The ZnO electrode shows excellent optical and electrocatalytic ability, which may find further applications such as optoelectronics or as sensors as well as other modern industrial areas.

  16. Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

    Science.gov (United States)

    Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

    2013-03-01

    In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

  17. Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

    International Nuclear Information System (INIS)

    Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

    2010-01-01

    Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

  18. Atomic Layer Deposition of ZnO on Multi-walled Carbon Nanotubes and Its Use for Synthesis of CNT–ZnO Heterostructures

    Directory of Open Access Journals (Sweden)

    Li C

    2010-01-01

    Full Text Available Abstract In this article, direct coating of ZnO on PECVD-grown multi-walled carbon nanotubes (MWCNTs is achieved using atomic layer deposition (ALD. Transmission electron microscopy investigation shows that the deposited ZnO shell is continuous and uniform, in contrast to the previously reported particle morphology. The ZnO layer has a good crystalline quality as indicated by Raman and photoluminescence (PL measurements. We also show that such ZnO layer can be used as seed layer for subsequent hydrothermal growth of ZnO nanorods, resulting in branched CNT–inorganic hybrid nanostructures. Potentially, this method can also apply to the fabrication of ZnO-based hybrid nanostructures on other carbon nanomaterials.

  19. Identification and origin of visible transitions in one dimensional (1D) ZnO nanostructures: Excitation wavelength and morphology dependence study

    Energy Technology Data Exchange (ETDEWEB)

    Baral, Arpit [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Khanuja, Manika, E-mail: manikakhanuja@gmail.com [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Islam, S.S. [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Sharma, Rishabh; Mehta, B.R. [Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2017-03-15

    In this present work, one dimensional (1D) ZnO nanostructures were synthesized by mechanical assisted thermal decomposition process. The samples were characterized by transmission electron microscopy (TEM) for morphology, high-resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) for structural characterization. Photoluminescence (PL) and Photoluminescence spectra evolution was studied as a function of (i) excitation wavelength (λ{sub Ex:} 310–370 nm) and (ii) morphology (nanoneedles and nanorods). PL spectra were observed to be highly asymmetric with strong dependence on excitation wavelength (λ{sub Ex}). PL spectra categorized into two types as a function of excitation wavelength (λ{sub Ex}): I. λ{sub Ex}≤345 nm and II. λ{sub Ex}≥350 nm. The PL spectra were deconvoluted into multiple Gaussian components for each excitation wavelength. The position of each component is a signature of its origin and corresponds to specific visible transition. The transition involving origin from conduction band (CB) are absent for excitation wavelength λ{sub Ex}≥350 nm. The tunable photoresponse is achieved in 1D ZnO nanostructures by varying (i) excitation wavelength and (ii) morphology: nanoneedles to nanorods. PL intensity increases as aspect ratio decrease from nanoneedles to nanorods morphology. This is attributed to non-radiative quenching by near surface defects.

  20. Uniform Fe3O4 coating on flower-like ZnO nanostructures by atomic layer deposition for electromagnetic wave absorption.

    Science.gov (United States)

    Wan, Gengping; Wang, Guizhen; Huang, Xianqin; Zhao, Haonan; Li, Xinyue; Wang, Kan; Yu, Lei; Peng, Xiange; Qin, Yong

    2015-11-21

    An elegant atomic layer deposition (ALD) method has been employed for controllable preparation of a uniform Fe3O4-coated ZnO (ZnO@Fe3O4) core-shell flower-like nanostructure. The Fe3O4 coating thickness of the ZnO@Fe3O4 nanostructure can be tuned by varying the cycle number of ALD Fe2O3. When serving as additives for microwave absorption, the ZnO@Fe3O4-paraffin composites exhibit a higher absorption capacity than the ZnO-paraffin composites. For ZnO@500-Fe3O4, the effective absorption bandwidth below -10 dB can reach 5.2 GHz and the RL values below -20 dB also cover a wide frequency range of 11.6-14.2 GHz when the coating thickness is 2.3 mm, suggesting its potential application in the treatment of the electromagnetic pollution problem. On the basis of experimental observations, a mechanism has been proposed to understand the enhanced microwave absorption properties of the ZnO@Fe3O4 composites.

  1. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    International Nuclear Information System (INIS)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podestà, Alessandro; Milani, Paolo; Piseri, Paolo

    2013-01-01

    Nanostructured porous films of carbon with density of about 0.5 g/cm 3 and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  2. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  3. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Science.gov (United States)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podestà, Alessandro; Milani, Paolo; Piseri, Paolo

    2013-02-01

    Nanostructured porous films of carbon with density of about 0.5 g/cm3 and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  4. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  5. Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

    KAUST Repository

    Labouchere, Philippe

    2014-04-23

    A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbone host. Using a combination of self-assembly, hydrothermal or electrodeposition of single crystalline ZnO nanowires and TiO2 passivation, a novel photoanode with scattering capability for optimal light harvesting is fabricated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.; Maximov, M. V. [St. Petersburg Academic University (Russian Federation); Rouvimov, S. S. [University of Notre Dame (United States); Zhukov, A. E. [St. Petersburg Academic University (Russian Federation)

    2017-03-15

    The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

  7. Efficient acetone sensor based on Ni-doped ZnO nanostructures prepared by spray pyrolysis technique

    Science.gov (United States)

    Darunkar, Swapnil S.; Acharya, Smita A.

    2018-05-01

    Ni-doped ZnO thin film was prepared by home-built spray pyrolysis unit for the detection of acetone at 300°C. Scanning electron microscopic (SEM) images of as-developed thin film of undoped ZnO exhibits large quantity of spherical, non-agglomerated particles with uniform size while in Ni-doped ZnO, particles are quite non-uniform in nature. The particle size estimated by using image J are obtained to be around 20-200 nm. Ni-doping effect on band gaps are determined by UV-vis optical spectroscopy and band gap of Ni-doped ZnO is found to be 3.046 eV. Nickel doping exceptionally enhances the sensing response of ZnO as compared to undoped ZnO system. The major role of the Ni-doping is to create more active sites for chemisorbed oxygen on the surface of sensor and correspondingly, to improve the sensing response. The 6 at.% of Ni-doped ZnO exhibits the highest response (92%) for 100 ppm acetone at 300 °C.

  8. Versatile function of nanostructured-ZnO sensors using photo-assisted method

    OpenAIRE

    Ching-Ting Lee; Chia-Hsun Chen; Ying-Shuo Chiu

    2016-01-01

    The vertical ZnO nanorod array was grown as the piezoelectric pressure sensors. By taking advantages of the induced conductivity of the ZnO nanorod array under light illumination, the nanostructured-ZnO pressure sensors exhibited the improved sensitivity of 7.89 μA ⋅ cm2/mN compared to 0.027 μA ⋅ cm2/mN of the ones without light illumination. Moreover, the sensing current of the nanostructured-ZnO pressure sensors depended on the ultraviolet wavelength and power density. Consequently, the sen...

  9. Improvement of stoichiometry in (ZnO)1-x(GaN)x thin films grown by laser ablation

    International Nuclear Information System (INIS)

    Gopalakrishnan, N.; Shin, B.C.; Bhuvana, K.P.; Elanchezhiyan, J.; Balasubramanian, T.

    2008-01-01

    The fabrication of pure and GaN (1 mol%) doped ZnO thin films by KrF excimer laser have been addressed. The fabricated films on Si(1 1 1) substrates have been investigated by X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) in order to investigate the structural, optical and morphological properties, respectively. The XRD analysis shows that the full width at half maximum (FWHM) of ZnO film is found to be decreased as doped with GaN due to the improvement of the stoichiometery between Zn and O. The PL spectra reveal that the deep level emissions due to native donor defects in pure ZnO are suppressed upon doping with GaN. The images of AFM show that the RMS surface roughness of pure ZnO, 27 nm is reduced to18 nm while doped with 1 mol% GaN. The incorporation of nitrogen in the film is confirmed by glow discharge mass spectroscopy (GDMS). The improved structural, optical and morphological properties of ZnO by GaN dopant due to enhancement of stoichiometry have been discussed in detail

  10. Investigations of p-type signal for ZnO thin films grown on (100)GaAs substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, D.J. [Nanovation SARL, Orsay (France); Univ. de Technologie de Troyes, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Monteiro, T.; Soares, M.; Neves, A.; Carmo, M.; Correia, M.R. [Physics Dept., Univ. of Aveiro (Portugal); Pereira, S. [Physics Dept., Univ. of Aveiro (Portugal); Inst. Tecnologico e Nuclear, Sacavem (Portugal); Lusson, A. [Inst. d' Electronique Fondamentale, Orsay Univ. (France); LPSC - CNRS, Meudon (France); Alves, E.; Barradas, N.P. [Inst. Tecnologico e Nuclear, Sacavem (Portugal); Morrod, J.K.; Prior, K.A. [Physics Dept., Heriot Watt Univ., Edinburgh Scotland (United Kingdom); Kung, P.; Yasan, A.; Razeghi, M. [Center for Quantum Devices, Dept. of Electrical and Computer Engineering, Northwestern Univ., Evanston, IL (United States)

    2006-03-15

    In this work we investigated ZnO films grown on semi-insulating (100)GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility ({proportional_to}260 cm{sup 2}/Vs) and a carrier concentration of {proportional_to}1.8 x 10{sup 19} cm{sup -3}. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn{sub 2}As{sub 2}O{sub 7}. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450 C (without post-annealing). (orig.)

  11. Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

    2016-03-31

    Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

  12. CuO nanostructures grown by the SILAR method: Influence of Pb-doping on the morphological, structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Bayansal, F., E-mail: fbayansal@gmail.com [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, Hatay (Turkey); Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Gülen, Y. [Department of Physics, Faculty of Arts and Sciences, Marmara University, İstanbul (Turkey); Şahin, B. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Kahraman, S. [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, Hatay (Turkey); Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey); Çetinkara, H.A. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay (Turkey)

    2015-01-15

    Highlights: • CuO nanostructures with Pb-doping by the SILAR method is reported for the first time. • CuO nanostructures of different morphologies were grown by different Pb ratios. • E{sub g} values of the films can be altered by changing Pb doping concentrations. - Abstract: CuO nanostructures with and without Pb were synthesized by the Successive Ionic Layer Adsorption and Reaction method. The films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and ultraviolet–visible spectrophotometry. Scanning electron microscopy results showed that the morphology of the film surface was changed from plate-like to coral-like nanostructures with increasing Pb concentration. The X-ray diffraction patterns showed the monoclinic crystal structure with preferential planes of (1{sup ¯}11) and (1 1 1). Furthermore, ultraviolet–visible spectra showed that the band gap of the films was tailored by Pb doping.

  13. CuO nanostructures grown by the SILAR method: Influence of Pb-doping on the morphological, structural and optical properties

    International Nuclear Information System (INIS)

    Bayansal, F.; Gülen, Y.; Şahin, B.; Kahraman, S.; Çetinkara, H.A.

    2015-01-01

    Highlights: • CuO nanostructures with Pb-doping by the SILAR method is reported for the first time. • CuO nanostructures of different morphologies were grown by different Pb ratios. • E g values of the films can be altered by changing Pb doping concentrations. - Abstract: CuO nanostructures with and without Pb were synthesized by the Successive Ionic Layer Adsorption and Reaction method. The films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction and ultraviolet–visible spectrophotometry. Scanning electron microscopy results showed that the morphology of the film surface was changed from plate-like to coral-like nanostructures with increasing Pb concentration. The X-ray diffraction patterns showed the monoclinic crystal structure with preferential planes of (1 ¯ 11) and (1 1 1). Furthermore, ultraviolet–visible spectra showed that the band gap of the films was tailored by Pb doping

  14. Patterned Well-Aligned ZnO Nanorods Assisted with Polystyrene Monolayer by Oxygen Plasma Treatment

    Directory of Open Access Journals (Sweden)

    Hyun Ji Choi

    2016-08-01

    Full Text Available Zinc oxide is known as a promising material for sensing devices due to its piezoelectric properties. In particular, the alignment of ZnO nanostructures into ordered nanoarrays is expected to improve the device sensitivity due to the large surface area which can be utilized to capture significant quantities of gas particles. However, ZnO nanorods are difficult to grow on the quartz substrate with well-ordered shape. So, we investigated nanostructures by adjusting the interval distance of the arranged ZnO nanorods using polystyrene (PS spheres of various sizes (800 nm, 1300 nm and 1600 nm. In addition, oxygen plasma treatment was used to specify the nucleation site of round, patterned ZnO nanorod growth. Therefore, ZnO nanorods were grown on a quartz substrate with a patterned polystyrene monolayer by the hydrothermal method after oxygen plasma treatment. The obtained ZnO nanostructures were characterized by X-ray diffraction (XRD and field-emission scanning electron microscope (FE-SEM.

  15. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    International Nuclear Information System (INIS)

    Kunj, Saurabh; Sreenivas, K.

    2016-01-01

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O_2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  16. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    Science.gov (United States)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  17. Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kunj, Saurabh, E-mail: saurabhkunj22@gmail.com; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi-110007 (India)

    2016-05-23

    Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

  18. Physical properties of nanostructured CeO2 thin films grown by SILAR method

    Science.gov (United States)

    Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

    2018-05-01

    Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

  19. Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

    International Nuclear Information System (INIS)

    Ubale, A.U.; Bargal, A.N.

    2010-01-01

    This paper reports the preparation of photosensitive nanostructured CdS thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type. (author)

  20. Synthesis and Characterization of Nanostructured ZnO Thick Film Gas Sensors Prepared by Screen Printing Method

    Directory of Open Access Journals (Sweden)

    R. Y. BORSE

    2010-12-01

    Full Text Available Nanosized ZnO was prepared by self propagating solution combustion synthesis method. The synthesized ZnO thick films were deposited on alumina substrate by using standard screen printing technique and fired at 700 0C. The films were characterized by X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and energy dispersive analysis of X-ray (EDAX. The electrical behaviors of ZnO thick films were investigated. From XRD spectra it is revealed that ZnO films are polycrystalline in nature. The average grain size of 87.44 nm has been estimated for the film fired at 700 0C using Scherrer’s formula. EDAX clearly shows the peaks corresponding to Zn and O element which confirms the successful growth of ZnO films. Gas sensing study for these samples shows high sensitivity and selectivity towards NO2 at all operating temperatures. The resistivity, TCR and activation energy of the ZnO films have been evaluated and discussed.

  1. Ultrafast Formation of ZnO Nanorods via Seed-Mediated Microwave Assisted Hydrolysis Process

    International Nuclear Information System (INIS)

    Tan, S T; Yahaya, M; Yap, C C; Umar, A A; Salleh, M M

    2013-01-01

    One dimensional (1D) zinc oxide, ZnO nanostructures have shown promising results for usage in photodiode and optoelectronic device due to their high surface area. Faster and conventional method for synthesis ZnO nanorods has become an attention for researcher today. In this paper, ZnO nanorods have been successfully synthesized via two-step process, namely alcothermal seeding and seed-mediated microwave hydrolysis process. In typical process, the ZnO nanoseeds were grown in the growth solution that contained equimolar (0.04 M) of zinc nitrate hexahydrate, Zn (NO 3 ).6H 2 O and hexamethylenetetramine, HMT. The growth process was carried inside the inverted microwave within 5- 20 s. The effect of growth parameters (i.e. concentration, microwave power, time reaction) upon the modification of ZnO morphology was studied. ZnO nanostructures were characterized by Field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD). The densities of nanorods were evaluated by the Image J analysis. It was found that the morphology (e.g. shape and size) of nanostructures has changed drastically with the increment of growth solution concentration. The density of ZnO nanorods was proven to increase with the increasing of reaction time and microwave power. We hypothesize that the microwave power might enhance the rate of nucleation and promote the faster nanostructure growth as compared with the normal heating condition due to the superheating phenomenon. This method might promote a new and faster alternative way in nanostructure growth which can be applied in currently existing application.

  2. Ultrafast Formation of ZnO Nanorods via Seed-Mediated Microwave Assisted Hydrolysis Process

    Science.gov (United States)

    Tan, S. T.; Umar, A. A.; Yahaya, M.; Yap, C. C.; Salleh, M. M.

    2013-04-01

    One dimensional (1D) zinc oxide, ZnO nanostructures have shown promising results for usage in photodiode and optoelectronic device due to their high surface area. Faster and conventional method for synthesis ZnO nanorods has become an attention for researcher today. In this paper, ZnO nanorods have been successfully synthesized via two-step process, namely alcothermal seeding and seed-mediated microwave hydrolysis process. In typical process, the ZnO nanoseeds were grown in the growth solution that contained equimolar (0.04 M) of zinc nitrate hexahydrate, Zn (NO3).6H2O and hexamethylenetetramine, HMT. The growth process was carried inside the inverted microwave within 5- 20 s. The effect of growth parameters (i.e. concentration, microwave power, time reaction) upon the modification of ZnO morphology was studied. ZnO nanostructures were characterized by Field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD). The densities of nanorods were evaluated by the Image J analysis. It was found that the morphology (e.g. shape and size) of nanostructures has changed drastically with the increment of growth solution concentration. The density of ZnO nanorods was proven to increase with the increasing of reaction time and microwave power. We hypothesize that the microwave power might enhance the rate of nucleation and promote the faster nanostructure growth as compared with the normal heating condition due to the superheating phenomenon. This method might promote a new and faster alternative way in nanostructure growth which can be applied in currently existing application.

  3. Characterization of nanostructured Mn3O4 thin films grown by SILAR method at room temperature

    International Nuclear Information System (INIS)

    Ubale, A.U.; Belkhedkar, M.R.; Sakhare, Y.S.; Singh, Arvind; Gurada, Chetan; Kothari, D.C.

    2012-01-01

    A novel successive ionic layer adsorption and reaction method has been successfully employed to grow nanostructured conducting nearly transparent thin films of Mn 3 O 4 on to glass substrates at room temperature using MnCl 2 and NaOH as cationic and anionic precursors. The structural and morphological characterizations of the as deposited Mn 3 O 4 films have been carried out by means of X-ray diffraction (XRD), Field Emission Scanning Electron Micrograph (FESEM), EDAX, Atomic Fore Microscopy (AFM) and Fourier Transform Infrared Spectrum (FTIR) analysis. The optical absorption and electrical resistivity measurements were carried out to investigate optical band gap and activation energy of Mn 3 O 4 films deposited by SILAR method. The optical band gap and activation energy of the as deposited film is found to be 2.70 and 0.14 eV respectively. The thermo-emf measurements of Mn 3 O 4 thin film confirm its p-type semiconducting nature. Highlights: ► Nanostructured Mn 3 O 4 thin film is prepared by SILAR method at room temperature. ► The film is nanocrystalline with orthorhombic structure of Mn 3 O 4 . ► The XRD, FTIR, FESEM, EDX and AFM characterization confirms nanocrystalline nature. ► Optical band gap, electrical resistivity and activation energy of film is reported. ► A thermo-emf measurement confirms p-type conductivity of Mn 3 O 4 films.

  4. Surface nanostructuring of thin film composite membranes via grafting polymerization and incorporation of ZnO nanoparticles

    Science.gov (United States)

    Isawi, Heba; El-Sayed, Magdi H.; Feng, Xianshe; Shawky, Hosam; Abdel Mottaleb, Mohamed S.

    2016-11-01

    A new approach for modification of polyamid thin film composite membrane PA(TFC) using synthesized ZnO nanoparticles (ZnO NPs) was shown to enhance the membrane performances for reverse osmosis water desalination. First, active layer of synthesis PA(TFC) membrane was activated with an aqueous solution of free radical graft polymerization of hydrophilic methacrylic acid (MAA) monomer onto the surface of the PA(TFC) membrane resulting PMAA-g-PA(TFC). Second, the PA(TFC) membrane has been developed by incorporation of ZnO NPs into the MAA grafting solution resulting the ZnO NPs modified PMAA-g-PA(TFC) membrane. The surface properties of the synthesized nanoparticles and prepared membranes were investigated using the FTIR, XRD and SEM. Morphology studies demonstrated that ZnO NPs have been successfully incorporated into the active grafting layer over PA(TFC) composite membranes. The zinc leaching from the ZnO NPs modified PMAA-g-PA(TFC) was minimal, as shown by batch tests that indicated stabilization of the ZnO NPs on the membrane surfaces. Compared with the a pure PA(TFC) and PMAA-g-PA(TFC) membranes, the ZnO NPs modified PMAA-g-PA(TFC) was more hydrophilic, with an improved water contact angle (∼50 ± 3°) over the PMAA-g-PA(TFC) (63 ± 2.5°). The ZnO NPs modified PMAA-g-PA(TFC) membrane showed salt rejection of 97% (of the total groundwater salinity), 99% of dissolved bivalent ions (Ca2+, SO42-and Mg2+), and 98% of mono valent ions constituents (Cl- and Na+). In addition, antifouling performance of the membranes was determined using E. coli as a potential foulant. This demonstrates that the ZnO NPs modified PMAA-g-PA(TFC) membrane can significantly improve the membrane performances and was favorable to enhance the selectivity, permeability, water flux, mechanical properties and the bio-antifouling properties of the membranes for water desalination.

  5. Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

    Science.gov (United States)

    Valanarasu, S; Dhanasekaran, V; Chandramohan, R; Kulandaisamy, I; Sakthivelu, A; Mahalingam, T

    2013-08-01

    The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.

  6. Structural, optical and magnetic properties of nanocrystalline Co-doped ZnO thin films grown by sol-gel

    Energy Technology Data Exchange (ETDEWEB)

    Kayani, Zohra Nazir; Shah, Iqra; Zulfiqar, Bareera; Sabah, Aneeqa [Lahore College for Women Univ., Lahore (Pakistan); Riaz, Saira; Naseem, Shahzad [Univ. of the Punjab, Lahore (Pakistan). Centre of Excellence in Solid State Physics

    2018-04-01

    Cobalt-doped ZnO thin films have been deposited using a sol-gel route by changing the number of coats on the substrate from 6 to 18. This project deals with various film thicknesses by increasing the number of deposited coats. The effect of thickness on structural, magnetic, surface morphology and optical properties of Co-doped ZnO thin film was studied. The crystal structure of the Co-doped ZnO films was investigated by X-ray diffraction. The films have polycrystalline wurtzite hexagonal structures. A Co{sup 2+} ion takes the place of a Zn{sup 2+} ion in the lattice without creating any distortion in its hexagonal wurtzite structure. An examination of the optical transmission spectra showed that the energy band gap of the Co-doped ZnO films increased from 3.87 to 3.97 eV with an increase in the number of coatings on the substrate. Ferromagnetic behaviour was confirmed by measurements using a vibrating sample magnetometer. The surface morphology of thin films was assessed by scanning electron microscope. The grain size on the surface of thin films increased with an increase in the number of coats.

  7. Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

    Science.gov (United States)

    Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

    2012-09-01

    We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

  8. Electrical properties of ZnO nanorods and layers

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

    2007-07-01

    ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

  9. Zinc oxide nanostructures: new properties for advances applications

    International Nuclear Information System (INIS)

    Lupan, Oleg; Chow, Lee; Pauporte, Thierry

    2011-01-01

    Zinc oxide is a material which exhibits a variety of new properties at nanometer dimensions. Various synthesis techniques have been carried out to provide growth of nanowires, nanorods, nanorings, nanosprings, and nanobelts of ZnO under various conditions. These nanostructures show that ZnO possesses probably the richest family of nanoarchitectures among all materials, including their structures and properties. Such nanoarchitectures are potential building blocks for novel applications in optoelectronics, sensors, photovoltaic and nano-biomedical sciences. This work presents a review of various nano architectures of ZnO grown by the electrochemical, hydrothermal and solid-vapor phase techniques and their properties. The possible applications of ZnO nanowires as sensors, nano-DSSC, photodetectors and nano-LEDs will be presented.

  10. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  11. Matrix-assisted energy conversion in nanostructured piezoelectric arrays

    Science.gov (United States)

    Sirbuly, Donald J.; Wang, Xianying; Wang, Yinmin

    2013-01-01

    A nanoconverter is capable of directly generating electricity through a nanostructure embedded in a polymer layer experiencing differential thermal expansion in a stress transfer zone. High surface-to-volume ratio semiconductor nanowires or nanotubes (such as ZnO, silicon, carbon, etc.) are grown either aligned or substantially vertically aligned on a substrate. The resulting nanoforest is then embedded with the polymer layer, which transfers stress to the nanostructures in the stress transfer zone, thereby creating a nanostructure voltage output due to the piezoelectric effect acting on the nanostructure. Electrodes attached at both ends of the nanostructures generate output power at densities of .about.20 nW/cm.sup.2 with heating temperatures of .about.65.degree. C. Nanoconverters arrayed in a series parallel arrangement may be constructed in planar, stacked, or rolled arrays to supply power to nano- and micro-devices without use of external batteries.

  12. Investigation of the Influence of the As-Grown ZnO Nanorods and Applied Potentials on an Electrochemical Sensor for In-Vitro Glucose Monitoring

    Directory of Open Access Journals (Sweden)

    Mohammed Marie

    2017-01-01

    Full Text Available The influence of the as-grown zinc oxide nanorods (ZnO NRs on the fabricated electrochemical sensor for in vitro glucose monitoring were investigated. A direct growth of ZnO NRs was performed on the Si/SiO2/Au electrode, using hydrothermal and sol-gel techniques at low temperatures. The structure, consisting of a Si/SiO2/Au/GOx/Nafion membrane, was considered as a baseline, and it was tested under several applied potential 0.1–0.8 V. The immobilized working electrode, with GOx and a nafion membrane, was characterized amperometrically using a source meter Keithely 2410, and an electrochemical impedance Gamry potentiostat. The sensor exhibited the following: a high sensitivity of ~0.468 mA/cm2 mM, a low detection limit in the order of 166.6 µM, and a fast and sharp response time of around 2 s. The highest sensitivity and the lowest limit of detection were obtained at 0.4 volt, after the growth of ZnO NRs. The highest net sensitivity was obtained after subtracting the sensitivity of the baseline, and it was in the order of 0.315 mA/cm2·mM. The device was tested with a range of glucose concentrations from 1–10 mM, showing a linear line from 3–8 mM, and the device was saturated after exceeding high concentrations of glucose. Such devices can be used for in vitro glucose monitoring, since glucose changes can be accurately detected.

  13. CuO and ZnO nanoparticles: phytotoxicity, metal speciation, and induction of oxidative stress in sand-grown wheat

    Energy Technology Data Exchange (ETDEWEB)

    Dimkpa, Christian O., E-mail: cdimkpa@usu.edu [Utah State University, Department of Biological Engineering (United States); McLean, Joan E. [Utah State University, Utah Water Research Laboratory (United States); Latta, Drew E. [Argonne National Laboratory, Biosciences Division (United States); Manangon, Eliana [University of Utah, Department of Geology and Geophysics (United States); Britt, David W. [Utah State University, Department of Biological Engineering (United States); Johnson, William P. [University of Utah, Department of Geology and Geophysics (United States); Boyanov, Maxim I. [Argonne National Laboratory, Biosciences Division (United States); Anderson, Anne J. [Utah State University, Department of Biological Engineering (United States)

    2012-09-15

    Metal oxide nanoparticles (NPs) are reported to impact plant growth in hydroponic systems. This study describes the impact of commercial CuO (<50 nm) and ZnO (<100 nm) NPs on wheat (Triticum aestivum) grown in a solid matrix, sand. The NPs contained both metallic and non-metallic impurities to different extents. Dynamic light scattering and atomic force microscopy (AFM) assessments confirmed aggregation of the NPs to submicron sizes. AFM showed transformation of ZnO NPs from initial rhomboid shapes in water to elongated rods in the aqueous phase of the sand matrix. Solubilization of metals occurred in the sand at similar rates from CuO or ZnO NPs as their bulk equivalents. Amendment of the sand with 500 mg Cu and Zn/kg sand from the NPs significantly (p = 0.05) reduced root growth, but only CuO NPs impaired shoot growth; growth reductions were less with the bulk amendments. Dissolved Cu from CuO NPs contributed to their phytotoxicity but Zn release did not account for the changes in plant growth. Bioaccumulation of Cu, mainly as CuO and Cu(I)-sulfur complexes, and Zn as Zn-phosphate was detected in the shoots of NP-challenged plants. Total Cu and Zn levels in shoot were similar whether NP or bulk materials were used. Oxidative stress in the NP-treated plants was evidenced by increased lipid peroxidation and oxidized glutathione in roots and decreased chlorophyll content in shoots; higher peroxidase and catalase activities were present in roots. These findings correlate with the NPs causing increased production of reactive oxygen species. The accumulation of Cu and Zn from NPs into edible plants has relevance to the food chain.

  14. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  15. Broad range tuning of structural and optical properties of Znx Mg1−x O nanostructures grown by vapor transport method

    International Nuclear Information System (INIS)

    Vanjaria, Jignesh V; Azhar, Ebraheem Ali; Yu, Hongbin

    2016-01-01

    One-dimensional (1D) Zn x Mg 1−x O nanomaterials have drawn global attention due to their remarkable chemical and physical properties, and their diverse current and future technological applications. In this work, 1D ZnMgO nanostructures with different magnesium concentrations and different morphologies were grown directly on zinc oxide-coated silicon substrates by thermal evaporation of zinc oxide, magnesium boride and graphite powders. Highly well-defined Mg-rich ZnMgO nanorods with a rock salt structure and Zn-rich ZnMgO nanostructures with a wurtzite structure have been deposited individually by careful optimization of the source mixture and process parameters. Structural and optical properties of the deposited products were studied by scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, and Raman spectroscopy. Cathodoluminescence measurements demonstrate strong dominant peaks at 3.3 eV in Mg poor ZnMgO nanostructures and 4.8 eV in Mg rich nanostructures implying that the ZnMgO nanostructures can be used for the fabrication of deep UV optoelectronic devices. A mechanism for the formation and achieved diverse morphology of the ZnMgO nanostructures was proposed based on the characterization results. (paper)

  16. Functional zinc oxide nanostructures for electronic and energy applications

    Science.gov (United States)

    Prasad, Abhishek

    ZnO has proven to be a multifunctional material with important nanotechnological applications. ZnO nanostructures can be grown in various forms such as nanowires, nanorods, nanobelts, nanocombs etc. In this work, ZnO nanostructures are grown in a double quartz tube configuration thermal Chemical Vapor Deposition (CVD) system. We focus on functionalized ZnO Nanostructures by controlling their structures and tuning their properties for various applications. The following topics have been investigated: (1) We have fabricated various ZnO nanostructures using a thermal CVD technique. The growth parameters were optimized and studied for different nanostructures. (2) We have studied the application of ZnO nanowires (ZnONWs) for field effect transistors (FETs). Unintentional n-type conductivity was observed in our FETs based on as-grown ZnO NWs. We have then shown for the first time that controlled incorporation of hydrogen into ZnO NWs can introduce p-type characters to the nanowires. We further found that the n-type behaviors remained, leading to the ambipolar behaviors of hydrogen incorporated ZnO NWs. Importantly, the detected p- and n- type behaviors are stable for longer than two years when devices were kept in ambient conditions. All these can be explained by an ab initio model of Zn vacancy-Hydrogen complexes, which can serve as the donor, acceptors, or green photoluminescence quencher, depend on the number of hydrogen atoms involved. (3) Next ZnONWs were tested for electron field emission. We focus on reducing the threshold field (Eth) of field emission from non-aligned ZnO NWs. As encouraged by our results on enhancing the conductivity of ZnO NWs by hydrogen annealing described in Chapter 3, we have studied the effect of hydrogen annealing for improving field emission behavior of our ZnO NWs. We found that optimally annealed ZnO NWs offered much lower threshold electric field and improved emission stability. We also studied field emission from ZnO NWs at moderate

  17. Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

    Directory of Open Access Journals (Sweden)

    Singh A.

    2015-12-01

    Full Text Available In this work, zinc oxide (ZnO nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP at room temperature. X-ray diffraction (XRD result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 μm to 1.61 μm and the length is about 4.89 μm. It has also been observed that at room temperature ultraviolet visible (UV-Vis absorption band is around 355 nm (blue shifted as compared to the bulk. The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  18. Intensity dependence and transient dynamics of donor-acceptor pair recombination in ZnO thin films grown on (001) silicon

    Science.gov (United States)

    Guo, Bing; Qiu, Z. R.; Wong, K. S.

    2003-04-01

    We report room-temperature time-integrated and time-resolved photoluminescence (PL) measurements on a nominally undoped wurtzite ZnO thin film grown on (001) silicon. A linear and sublinear excitation intensity Iex dependence of the PL intensity were observed for the 379.48-nm exciton line and the weak broad green band (˜510 nm), respectively. The green luminescence was found to decay as hyperbolic t-1, and its peak energy was observed to increase nearly logarithmically with increased Iex. These results are in an excellent agreement with the tunnel-assisted donor-deep-acceptor pair (DAP) model so that its large blueshifts of about 25 meV per decade increase in Iex can be accounted for by the screening of the fluctuating impurity potential. Also, the 30-ps fast decay of the exciton emission was attributed to the rapid trapping of carriers at luminescent impurities, while the short lifetime of τ1/e=200 ps for the green luminescence may be due to an alternative trapping by deeper centers in the ZnO. Finally, singly ionized oxygen and zinc vacancies have been tentatively invoked to act as donor-deep-acceptor candidates for the DAP luminescence, respectively.

  19. Hybrid Organic/ZnO p-n Junctions with n-Type ZnO Grown by Atomic Layer Deposition

    Science.gov (United States)

    Łuka, G.; Krajewski, T.; Szczerbakow, A.; Łusakowska, E.; Kopalko, K.; Guziewicz, E.; Wachnicki, Ł.; Szczepanik, A.; Godlewski, M.; Fidelus, J. D.

    2008-11-01

    We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.

  20. Flower-Like CuO/ZnO Hybrid Hierarchical Nanostructures Grown on Copper Substrate: Glycothermal Synthesis, Characterization, Hydrophobic and Anticorrosion Properties

    Directory of Open Access Journals (Sweden)

    Farshad Beshkar

    2017-06-01

    Full Text Available In this work we have demonstrated a facile formation of CuO nanostructures on copper substrates by the oxidation of copper foil in ethylene glycol (EG at 80 °C. On immersing a prepared CuO film into a solution containing 0.1 g Zn(acac2 in 20 mL EG for 8 h, ZnO flower-like microstructures composed of hierarchical three-dimensional (3D aggregated nanoparticles and spherical architectures were spontaneously formed at 100 °C. The as-synthesized thin films and 3D microstructures were characterized using XRD, SEM, and EDS techniques. The effects of sodium dodecyl sulphate (SDS, cetyltrimethylammonium bromide (CTAB, and polyethylene glycol (PEG 6000 as surfactants and stabilizers on the morphology of the CuO and ZnO structures were discussed. Possible growth mechanisms for the controlled organization of primary building units into CuO nanostructures and 3D flower-like ZnO architectures were proposed. The hydrophobic property of the products was characterized by means of water contact angle measurement. After simple surface modification with stearic acid and PDMS, the resulting films showed hydrophobic and even superhydrophobic characteristics due to their special surface energy and nano-microstructure morphology. Importantly, stable superhydrophobicity with a contact angle of 153.5° was successfully observed for CuO-ZnO microflowers after modification with PDMS. The electrochemical impedance measurements proved that the anticorrosion efficiency for the CuO/ZnO/PDMS sample was about 99%.

  1. Flower-Like CuO/ZnO Hybrid Hierarchical Nanostructures Grown on Copper Substrate: Glycothermal Synthesis, Characterization, Hydrophobic and Anticorrosion Properties.

    Science.gov (United States)

    Beshkar, Farshad; Khojasteh, Hossein; Salavati-Niasari, Masoud

    2017-06-25

    In this work we have demonstrated a facile formation of CuO nanostructures on copper substrates by the oxidation of copper foil in ethylene glycol (EG) at 80 °C. On immersing a prepared CuO film into a solution containing 0.1 g Zn(acac)₂ in 20 mL EG for 8 h, ZnO flower-like microstructures composed of hierarchical three-dimensional (3D) aggregated nanoparticles and spherical architectures were spontaneously formed at 100 °C. The as-synthesized thin films and 3D microstructures were characterized using XRD, SEM, and EDS techniques. The effects of sodium dodecyl sulphate (SDS), cetyltrimethylammonium bromide (CTAB), and polyethylene glycol (PEG) 6000 as surfactants and stabilizers on the morphology of the CuO and ZnO structures were discussed. Possible growth mechanisms for the controlled organization of primary building units into CuO nanostructures and 3D flower-like ZnO architectures were proposed. The hydrophobic property of the products was characterized by means of water contact angle measurement. After simple surface modification with stearic acid and PDMS, the resulting films showed hydrophobic and even superhydrophobic characteristics due to their special surface energy and nano-microstructure morphology. Importantly, stable superhydrophobicity with a contact angle of 153.5° was successfully observed for CuO-ZnO microflowers after modification with PDMS. The electrochemical impedance measurements proved that the anticorrosion efficiency for the CuO/ZnO/PDMS sample was about 99%.

  2. Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)

    Science.gov (United States)

    Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel

    2017-03-01

    Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.

  3. ZnMgO-ZnO quantum wells embedded in ZnO nanopillars: Towards realisation of nano-LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Bakin, A.; El-Shaer, A.; Mofor, A.C.; Al-Suleiman, M.; Schlenker, E.; Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

    2007-07-01

    ZnO thin films, ZnMgO/ZnO heterostructures and ZnO nanostructures were fabricated using molecular beam epitaxy (MBE), vapour phase transport (VPT) and an aqueous chemical growth approach (ACG). The possibility to employ several fabrication techniques is of special importance for the realization of unique device structures. MBE was implemented for ZnO-based layer and heterostructure growth. Pronounced RHEED oscillations were used for growth control and optimisation, resulting in high quality ZnO and Zn{sub 1-x}Mg{sub x}O epilayers and heterostructures, as well as ZnMgO/ZnO quantum wells on sapphire and SiC substrates. A novel advanced VPT approach is developed and sapphire, SiC, ZnO epitaxial layers, and even plastic and glass were implemented as substrates for ZnO growth. The VPT fabrication of ZnO nanopillars, leading to well aligned, c-axis oriented nanopillars with excellent quality and purity is demonstrated. Successful steps were made towards device fabrication on ZnO basis. The nanopillar fabrication technique is combined with MBE technology: MBE-grown ZnMgO/ZnO quantum well structures were grown on ZnO nanopillars presenting significant progress towards nano-LEDs realization. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Morphological evolution of porous nanostructures grown from a single isolated anodic alumina nanochannel

    Science.gov (United States)

    Chen, Shih-Yung; Chang, Hsuan-Hao; Lai, Ming-Yu; Liu, Chih-Yi; Wang, Yuh-Lin

    2011-09-01

    Porous anodic aluminum oxide (AAO) membranes have been widely used as templates for growing nanomaterials because of their ordered nanochannel arrays with high aspect ratio and uniform pore diameter. However, the intrinsic growth behavior of an individual AAO nanochannel has never been carefully studied for the lack of a means to fabricate a single isolated anodic alumina nanochannel (SIAAN). In this study, we develop a lithographic method for fabricating a SIAAN, which grows into a porous hemispherical structure with its pores exhibiting fascinating morphological evolution during anodization. We also discover that the mechanical stress affects the growth rate and pore morphology of AAO porous structures. This study helps reveal the growth mechanism of arrayed AAO nanochannels grown on a flat aluminum surface and provides insights to help pave the way to altering the geometry of nanochannels on AAO templates for the fabrication of advanced nanocomposite materials.

  5. Morphological evolution of porous nanostructures grown from a single isolated anodic alumina nanochannel

    International Nuclear Information System (INIS)

    Chen, Shih-Yung; Wang, Yuh-Lin; Chang, Hsuan-Hao; Lai, Ming-Yu; Liu, Chih-Yi

    2011-01-01

    Porous anodic aluminum oxide (AAO) membranes have been widely used as templates for growing nanomaterials because of their ordered nanochannel arrays with high aspect ratio and uniform pore diameter. However, the intrinsic growth behavior of an individual AAO nanochannel has never been carefully studied for the lack of a means to fabricate a single isolated anodic alumina nanochannel (SIAAN). In this study, we develop a lithographic method for fabricating a SIAAN, which grows into a porous hemispherical structure with its pores exhibiting fascinating morphological evolution during anodization. We also discover that the mechanical stress affects the growth rate and pore morphology of AAO porous structures. This study helps reveal the growth mechanism of arrayed AAO nanochannels grown on a flat aluminum surface and provides insights to help pave the way to altering the geometry of nanochannels on AAO templates for the fabrication of advanced nanocomposite materials.

  6. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    Science.gov (United States)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  7. High Performance Flexible Actuator of Urchin-Like ZnO Nanostructure/Polyvinylenefluoride Hybrid Thin Film with Graphene Electrodes for Acoustic Generator and Analyzer.

    Science.gov (United States)

    Cheong, Oug Jae; Lee, James S; Kim, Jae Hyun; Jang, Jyongsik

    2016-05-01

    A bass frequency response enhanced flexible polyvinylidene fluoride (PVDF) based thin film acoustic actuator is successfully fabricated. High concentrations of various zinc oxide (ZnO) is embedded in PVDF matrix, enhancing the β phase content and the dielectric property of the composite thin film. ZnO acts as a nucleation agent for the crystallization of PVDF. A chemical vapor deposition grown graphene is used as electrodes, enabling high electron mobility for the distortion free acoustic signals. The frequency response of the fabricated acoustic actuator is studied as a function of the film thickness and filler content. The optimized film has a thickness of 80 μm with 30 wt% filler content and shows 72% and 42% frequency response enhancement in bass and midrange compared to the commercial PVDF, respectively. Also, the total harmonic distortion decreases to 82% and 74% in the bass and midrange regions, respectively. Furthermore, the composite film shows a promising potential for microphone applications. Most of all, it is demonstrated that acoustic actuator performance is strongly influenced by degree of PVDF crystalline. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Structural and magnetic properties of Co-doped ZnO thin films grown by ultrasonic spray pyrolysis method

    Science.gov (United States)

    Baghdad, R.; Lemée, N.; Lamura, G.; Zeinert, A.; Hadj-Zoubir, N.; Bousmaha, M.; Bezzerrouk, M. A.; Bouyanfif, H.; Allouche, B.; Zellama, K.

    2017-04-01

    Cobalt-doped ZnO thin films with several different percentage of Co from 0 up to 15 at% were synthesized via a cheap, simple and versatile method i.e. ultrasonic spray pyrolysis at atmospheric pressure and a substrate temperature of 350 °C. The structure of the as-prepared samples was characterized by X-ray diffraction (XRD), Raman spectroscopy and FTIR. The Co-doping effect is revealed by the presence of three additional peaks around 235, 470 and 538 cm-1 respect to the Raman spectra of the unsubstituted film. Fourier transform infrared spectroscopy (FTIR) put in evidence the decrease of the bond force constant f with increasing Co-doping. By ultra-violet visible near infrared (UV-Vis-NIR) spectroscopy on Co-doped samples it was possible to show the presence of additional absorption bands at approximately 570, 620 and 660 nm suggesting that Co2+ ions do not change their oxidation when substituted to zinc and the ZnO lattice does not change its wurtzite structure as well. Finally, all our samples exhibit a paramagnetic behavior without any trace of intrinsic room temperature ferromagnetism.

  9. Nanomechanical mapping of graphene layers and interfaces in suspended graphene nanostructures grown via carbon diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Robinson, B.J. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Rabot, C. [CEA-LETI-Minatec Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 09 (France); Mazzocco, R. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Delamoreanu, A. [Microelectronics Technology Laboratory (LTM), Joseph Fourier University, French National Research Center (CNRS), 17 Avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Zenasni, A. [CEA-LETI-Minatec Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 09 (France); Kolosov, O.V., E-mail: o.kolosov@lancaster.ac.uk [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-01

    Graphene's remarkable mechanical, electronic and thermal properties are strongly determined by both the mechanism of its growth and its interaction with the underlying substrate. Evidently, in order to explore the fundamentals of these mechanisms, efficient nanoscale methods that enable observation of features hidden underneath the immediate surface are needed. In this paper we use nanomechanical mapping via ultrasonic force microscopy that employs MHz frequency range ultrasonic vibrations and allows the observation of surface composition and subsurface interfaces with nanoscale resolution, to elucidate the morphology of few layer graphene (FLG) films produced via a recently reported method of carbon diffusion growth (CDG) on platinum-metal based substrate. CDG is known to result in FLG suspended over large areas, which could be of high importance for graphene transfer and applications where a standalone graphene film is required. This study directly reveals the detailed mechanism of CDG three-dimensional growth and FLG film detachment, directly linking the level of graphene decoupling with variations of the substrate temperature during the annealing phase of growth. We also show that graphene initially and preferentially decouples at the substrate grain boundaries, likely due to its negative expansion coefficient at cooling, forming characteristic “nano-domes” at the intersections of the grain boundaries. Furthermore, quantitative nanomechanical mapping of flexural stiffness of suspended FLG “nano-domes” using kHz frequency range force modulation microscopy uncovers the progression of “nano-dome” stiffness from single to bi-modal distribution as CDG growth progresses, suggesting growth instability at advanced CDG stages. - Highlights: • Exploring growth and film-substrate decoupling in carbon diffusion grown graphene • Nanomechanical mapping of few layer graphene and graphene–substrate interfaces • Quantitative stiffness mapping of

  10. A third kind growth model of tetrapod: Rod-based single crystal ZnO tetrapod nanostructure

    International Nuclear Information System (INIS)

    Gong, J.F.; Huang, H.B.; Wang, Z.Q.; Zhao, X.N.; Yang, S.G.; Yu Zhongzhen

    2008-01-01

    In this paper, rod-based ZnO tetrapods were successfully synthesized by burning Zn particles in air covered with two firebricks. The products show hexagonal wurtzite phase. The microstructures of the tetrapod were studied carefully by scanning electron microscope (SEM), transmission electron microscope (TEM), SAED and HRTEM. The results show that tetrapod has single crystalline phase with one broader nanorod growing along [0 0 0 1] direction, three triangular nanosheets, growing out of the three trisection planes along [101-bar0] direction, and three epitaxial nanowires, growing from each tip of the triangular nanosheets. Based on the experimental results, a rod-based growth model was proposed to interpret its growth mechanism. Room temperature photoluminescence spectrum reveals that the ZnO tetrapods have ultra violet (UV) emission band (389 nm) and a green emission band (517 nm)

  11. Composites of Laminar Nanostructured ZnO and VOx-Nanotubes Hybrid as Visible Light Active Photocatalysts

    Directory of Open Access Journals (Sweden)

    Eglantina Benavente

    2018-02-01

    Full Text Available A series of hybrid heterostructured nanocomposites of ZnO with V2O5 nanotubes (VOx-NTs in different mixing ratios were synthesized, with the aim of reducing the recombination of photoinduced charge carriers and to optimize the absorption of visible light. The study was focused on the use of heterostructured semiconductors that can extend light absorption to the visible range and enhance the photocatalytic performance of ZnO in the degradation of methylene blue as a model pollutant. The addition of VOx-NTs in the synthesis mixture led to a remarkable performance in the degradation of the model dye, with hybrid ZnO (stearic acid/VOx-NTs at a ratio of 1:0.06 possessing the highest photocatalytic activity, about seven times faster than pristine zinc oxide. Diffuse reflectance spectroscopic measurements and experiments in the presence of different trapping elements allowed us to draw conclusions regarding the band positions and photocatalytic degradation mechanism. The photocatalytic activity measured in three subsequent cycles showed good reusability as no significant loss in efficiency of dye degradation was observed.

  12. Study of the Morphological, Structural, Optical and Photoelectrochemical Properties of Zinc Oxide Nanorods Grown Using a Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-04-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO-buffered fluorine-doped tin oxide (FTO) substrate using a microwave chemical bath deposition method with different zinc oxide precursor concentrations from 0.01 to 0.5 M. We investigated the effects of the zinc oxide precursor concentration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this work, we found that ZnO one-dimensional structures mainly grew along the (002) plane, and the nanorod length, diameter, surface area and photoelectrochemical properties were largely dependent on the precursor concentration. That is, the photoelectrochemical properties were affected by the morphological and structural properties of the ZnO. The morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructure were investigated by field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM), X-ray diffraction (XRD), UV-visible spectroscopy and 3-electrode potentiostat. We obtained the highest photocurrent density of 0.37 mA/cm{sup 2} (at 1.1 V vs. SCE) from the precursor concentration of 0.07 M, which resulted in ZnO nanostructures with proper length and diameter, large surface area and good structural properties.

  13. Nanostructured gold microelectrodes for SERS and EIS measurements by incorporating ZnO nanorod growth with electroplating

    Science.gov (United States)

    Zong, Xianli; Zhu, Rong; Guo, Xiaoliang

    2015-01-01

    In this paper, a fine gold nanostructure synthesized on selective planar microelectrodes in micro-chip is realized by using an advanced hybrid fabrication approach incorporating growth of nanorods (NRs) with gold electroplating. By this developed nanostructure, integration of in-situ surface-enhanced Raman spectroscopy (SERS) detection with electrochemical impedance spectroscopy (EIS) measurement for label-free, nondestructive, real-time and rapid monitoring on a single cell has been achieved. Moreover, parameters of Au nanostructures such as size of nanoholes/nanogaps can be controllably adjusted in the fabrication. We have demonstrated a SERS enhancement factor of up to ~2.24 × 106 and double-layer impedance decrease ratio of 90% ~ 95% at low frequency range below 200 kHz by using nanostructured microelectrodes. SERS detection and in-situ EIS measurement of a trapped single cell by using planar microelectrodes are realized to demonstrate the compatibility, multi-functions, high-sensitivity and simplicity of the micro-chip system. This dual function platform integrating SERS and EIS is of great significance in biological, biochemical and biomedical applications. PMID:26558325

  14. A highly efficient urea detection using flower-like zinc oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tak, Manvi; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika, E-mail: monikatomar@gmail.com [Department of Physics, Miranda House, University of Delhi, Delhi 110007 (India)

    2015-12-01

    A novel matrix based on flower-like zinc oxide nanostructures (ZnONF) has been fabricated using hydrothermal method and exploited successfully for the development of urea biosensor. Urease (Urs) is physically immobilized onto the ZnO nanostructure matrix synthesized over platinized silicon substrate. The surface morphology and crystallographic structure of the as-grown ZnONF have been characterized using a scanning electron microscope (SEM) and X-ray diffraction (XRD) techniques. The fabricated amperometric biosensor (Urs/ZnONF/Pt/Ti/Si) exhibits a linear sensing response towards urea over the concentration range 1.65 mM to 16.50 mM with an enhanced sensitivity (~ 132 μA/mM/cm{sup 2}) and a fast response time of 4 s. The relatively low value of Michaelis–Menten constant (K{sub m}) of 0.19 mM confirms the high affinity of the immobilized urease on the nanostructured ZnONF surface towards its analyte (urea). The obtained results demonstrate that flower-like ZnO nanostructures serve as a promising matrix for the realization of efficient amperometric urea biosensor with enhanced response characteristics. - Graphical abstract: The article focuses on the synthesis of flower-like morphology possessing zinc oxide nanostructures and its application towards urea detection with high sensitivity as well as selectivity. - Highlights: • Flower-like ZnO nanostructures based urea biosensor has been fabricated. • Grown ZnO nanostructures offer an advantageous urease immobilization platform owing to its very high surface area. • High sensitivity (~ 132 μA/mM/cm{sup 2}) and low Michaelis–Menten parameter (K{sub m}) value (~ 0.19 mM) were observed.

  15. A highly efficient urea detection using flower-like zinc oxide nanostructures

    International Nuclear Information System (INIS)

    Tak, Manvi; Gupta, Vinay; Tomar, Monika

    2015-01-01

    A novel matrix based on flower-like zinc oxide nanostructures (ZnONF) has been fabricated using hydrothermal method and exploited successfully for the development of urea biosensor. Urease (Urs) is physically immobilized onto the ZnO nanostructure matrix synthesized over platinized silicon substrate. The surface morphology and crystallographic structure of the as-grown ZnONF have been characterized using a scanning electron microscope (SEM) and X-ray diffraction (XRD) techniques. The fabricated amperometric biosensor (Urs/ZnONF/Pt/Ti/Si) exhibits a linear sensing response towards urea over the concentration range 1.65 mM to 16.50 mM with an enhanced sensitivity (~ 132 μA/mM/cm 2 ) and a fast response time of 4 s. The relatively low value of Michaelis–Menten constant (K m ) of 0.19 mM confirms the high affinity of the immobilized urease on the nanostructured ZnONF surface towards its analyte (urea). The obtained results demonstrate that flower-like ZnO nanostructures serve as a promising matrix for the realization of efficient amperometric urea biosensor with enhanced response characteristics. - Graphical abstract: The article focuses on the synthesis of flower-like morphology possessing zinc oxide nanostructures and its application towards urea detection with high sensitivity as well as selectivity. - Highlights: • Flower-like ZnO nanostructures based urea biosensor has been fabricated. • Grown ZnO nanostructures offer an advantageous urease immobilization platform owing to its very high surface area. • High sensitivity (~ 132 μA/mM/cm 2 ) and low Michaelis–Menten parameter (K m ) value (~ 0.19 mM) were observed

  16. Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

    International Nuclear Information System (INIS)

    Onuma, T.; Chichibu, S.F.; Uedono, A.; Yoo, Y.-Z.; Chikyow, T.; Sota, T.; Kawasaki, M.; Koinuma, H.

    2004-01-01

    Nonradiative photoluminescence (PL) lifetime (τ nr ) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τ nr of 105 ps at room temperature

  17. Phase diagram of interfacial growth modes by vapor deposition and its application for ZnO nanostructures

    Science.gov (United States)

    Shu, Da-Jun; Xiong, Xiang; Liu, Ming; Wang, Mu

    2017-09-01

    Interfacial growth from vapor has been extensively studied. However, a straightforward picture of the growth mode under different growth conditions is still lacking. In this paper, we develop a comprehensive interfacial growth theory based on the stochastic approach. Using a critical interisland separation, we construct a general phase diagram of the growth modes. It has been revealed that if the Ehrlich-Schwoebel barrier EES is smaller than a critical value, the interfacial growth proceeds in a layer-by-layer (LBL) mode at any deposition rate. However, if EES is larger than the critical value, LBL growth occurs only at very small or very large deposition rates relative to the intralayer hopping rate, and multilayer (ML) growth occurs at a moderate deposition rate. Experiments with zinc oxide growth by chemical vapor deposition have been designed to qualitatively demonstrate the theoretical model. By changing the flux of the carrier gas (nitrogen gas) in chemical vapor deposition, we realize LBL, ML, and then reentrance of LBL homoepitaxial growth of ZnO successively. Moreover, we find that surface kinetics of ZnO is suppressed by decreasing oxygen partial pressure by comparing the experimental observations and theoretical models, which is supported by our recent first-principles calculations. Since the influence of the substrate and the growth species on growth can approximately be represented by binding energy and surface kinetics, we suggest that the phase diagram is essential for interfacial growth of different materials by vapor deposition.

  18. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    International Nuclear Information System (INIS)

    Luka, G.; Witkowski, B.S.; Wachnicki, L.; Jakiela, R.; Virt, I.S.; Andrzejczuk, M.; Lewandowska, M.; Godlewski, M.

    2014-01-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10 −3 Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10 −3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes

  19. Thickness-modulated tungsten-carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields.

    Science.gov (United States)

    Serrano, Ismael García; Sesé, Javier; Guillamón, Isabel; Suderow, Hermann; Vieira, Sebastián; Ibarra, Manuel Ricardo; De Teresa, José María

    2016-01-01

    We report efficient vortex pinning in thickness-modulated tungsten-carbon-based (W-C) nanostructures grown by focused ion beam induced deposition (FIBID). By using FIBID, W-C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T) in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current).

  20. Photoelectrochemical and Raman characterization of nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Kozytskiy, A.V. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky Av., 03028 Kyiv (Ukraine); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky Av., 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky Av., 03028 Kyiv (Ukraine); Mazanik, A.V.; Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Korolik, O.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Dzhagan, V.M., E-mail: dzhagan@isp.kiev.ua [V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky Av., 03028 Kyiv (Ukraine)

    2014-07-01

    Properties of CdS nanoparticles (NPs) grown by successive ionic layer adsorption and reaction (SILAR) method on the surface of electrodeposited ZnO films were studied by Raman, photocurrent and UV–Vis absorption spectroscopies. The CdS nanoparticles deposited at a SILAR cycle number (N) from 5 to 10 exhibit a broadening of the band gap (E{sub g}) by 0.17–0.31 eV as compared with that of the CdS particles grown at N = 30. The size quantization of the interband transition energy in CdS nanoparticles is in accordance with the Raman spectroscopic data demonstrating a considerable increase in the LO peak intensity with increasing the N from 5 to 10 as a result of transition to resonant light scattering. The spectral width of the LO peak decreases from 50 to 15 cm{sup −1} as the N increases from 5 to 30 reflecting a less pronounced effect of the nanoparticle surface on the phonon scattering. A large spectral width of the Raman peaks is assumed to originate from a complex structure of the CdS nanoparticles comprising crystallinity domains that can affect the phonon confinement. The photocurrent spectroscopy of ZnO/CdS heterostructures showed that the band gap of CdS NPs deposited at N > 20 is smaller by ∼ 0.08 eV than that of bulk cadmium sulfide. It was concluded that this effect is not associated with photoexcitation of structural defects but rather reflects intrinsic electronic properties of SILAR-deposited CdS nanoparticles. - Highlights: • Visible-light-sensitive ZnO/CdS heterostructures were prepared by SILAR. • A large Raman peak width originates from a complex structure of CdS nanoparticles. • Vibrational properties of CdS nanoparticles depend on SILAR cycle number.

  1. Photoelectrochemical and Raman characterization of nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Kozytskiy, A.V.; Stroyuk, O.L.; Kuchmiy, S.Ya.; Mazanik, A.V.; Poznyak, S.K.; Streltsov, E.A.; Kulak, A.I.; Korolik, O.V.; Dzhagan, V.M.

    2014-01-01

    Properties of CdS nanoparticles (NPs) grown by successive ionic layer adsorption and reaction (SILAR) method on the surface of electrodeposited ZnO films were studied by Raman, photocurrent and UV–Vis absorption spectroscopies. The CdS nanoparticles deposited at a SILAR cycle number (N) from 5 to 10 exhibit a broadening of the band gap (E g ) by 0.17–0.31 eV as compared with that of the CdS particles grown at N = 30. The size quantization of the interband transition energy in CdS nanoparticles is in accordance with the Raman spectroscopic data demonstrating a considerable increase in the LO peak intensity with increasing the N from 5 to 10 as a result of transition to resonant light scattering. The spectral width of the LO peak decreases from 50 to 15 cm −1 as the N increases from 5 to 30 reflecting a less pronounced effect of the nanoparticle surface on the phonon scattering. A large spectral width of the Raman peaks is assumed to originate from a complex structure of the CdS nanoparticles comprising crystallinity domains that can affect the phonon confinement. The photocurrent spectroscopy of ZnO/CdS heterostructures showed that the band gap of CdS NPs deposited at N > 20 is smaller by ∼ 0.08 eV than that of bulk cadmium sulfide. It was concluded that this effect is not associated with photoexcitation of structural defects but rather reflects intrinsic electronic properties of SILAR-deposited CdS nanoparticles. - Highlights: • Visible-light-sensitive ZnO/CdS heterostructures were prepared by SILAR. • A large Raman peak width originates from a complex structure of CdS nanoparticles. • Vibrational properties of CdS nanoparticles depend on SILAR cycle number

  2. Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures.

    Science.gov (United States)

    Bhati, Vijendra Singh; Ranwa, Sapana; Rajamani, Saravanan; Kumari, Kusum; Raliya, Ramesh; Biswas, Pratim; Kumar, Mahesh

    2018-04-04

    We report enhanced hydrogen-gas-sensing performance of a Ni-doped ZnO sensor decorated with the optimum concentration of reduced graphene oxide (rGO). Ni-doped ZnO nanoplates were grown by radio frequency sputtering, rGO was synthesized by Hummer's method and decorated by the drop cast method of various concentration of rGO (0-1.5 wt %). The current-voltage characteristics of the rGO-loaded sensor are highly influenced by the loading concentration of rGO, where current conduction decreases and sensor resistance increases as the rGO concentration is increased up to 0.75 wt % because of the formation of various Schottky heterojunctions at rGO/ZnO interfaces. With the combined effect of more active site availability and formation of various p-n heterojunctions due to the optimum loading concentration of rGO (0.75 wt %), the sensor shows the maximum sensing response of ∼63.8% for 100 ppm hydrogen at moderate operating temperature (150 °C). The rGO-loaded sensors were able to detect a minimum of 1 ppm hydrogen concentration and showed high selectivity. However, a further increase in the rGO concentration (1.5 wt %) leads to the reduction of the relative response of hydrogen gas, ascribed to the formation of interconnections of rGO between electrodes. Therefore, it reduces the total resistance of the sensor and minimizes the effect of p-n heterojunction on sensor response.

  3. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S. [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-12-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.

  4. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    Science.gov (United States)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

    2011-12-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 °C. Post-growth annealing in air was carried out up to a temperature of 1000 °C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 °C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 × 1017 cm-3 at the annealing temperature of 600 °C. The origin of the p-type conductivity was consistent with the AsZn(VZn)2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the AsZn(VZn)2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

  5. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    To, C. K.; Yang, B.; Su, S. C.; Ling, C. C.; Beling, C. D.; Fung, S.

    2011-01-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10 17 cm -3 at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As Zn (V Zn ) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn (V Zn ) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence.

  6. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    International Nuclear Information System (INIS)

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-01-01

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

  7. White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates

    Science.gov (United States)

    Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

    2017-06-01

    We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

  8. White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates.

    Science.gov (United States)

    Song, Keun Man; Kim, Do-Hyun; Kim, Jong-Min; Cho, Chu-Young; Choi, Jehyuk; Kim, Kahee; Park, Jinsup; Kim, Hogyoug

    2017-06-02

    We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by changing the growth time, and distinct multiple photoluminescence peaks were observed at 360, 460, and 560 nm; these features were caused by InGaN/GaN-based multiple quantum wells (MQWs) on the nanostructured facets. The origin of each multi-peak was related to the different indium (In) compositions in the different planes of the quantum wells grown on the nanostructured GaN. The emitting units of MQWs in the LED structures were continuously connected, which is different from other GaN-based nanorod or nanowire LEDs. Therefore, the suggested structure had a larger active area. From the electroluminescence spectrum of the fabricated LED, monolithic white light emission with CIE color coordinates of x = 0.306 and y = 0.333 was achieved via multi-facet control combined with morphology control of the metal organic chemical vapor deposition-selective area growth of InGaN/GaN MQWs.

  9. Influence of nanostructure Fe-doped ZnO interlayer on the electrical properties of Au/n-type InP Schottky structure

    Energy Technology Data Exchange (ETDEWEB)

    Padma, R.; Balaram, N.; Reddy, I. Neelakanta; Reddy, V. Rajagopal, E-mail: reddy_vrg@rediffmail.com

    2016-07-01

    The Au/Fe-doped ZnO/n-InP metal/interlayer/semiconductor (MIS) Schottky structure is fabricated with Fe-doped ZnO nanostructure (NS) as an interlayer. The field emission scanning electron microscopy and atomic force microscopy results demonstrated that the surface morphology of the Fe−ZnO NS on n-InP is fairly smooth. The x-ray diffraction results reveal that the average grain size of the Fe−ZnO film is 12.35 nm. The electrical properties of the Au/n-InP metal-semiconductor (MS) and Au/Fe−ZnO NS/n-InP MIS Schottky structures are investigated by current-voltage and capacitance-voltage measurements at room temperature. The Au/Fe−ZnO NS/n-InP MIS Schottky structure has good rectifying ratio with low-leakage current compared to the Au/n-InP MS structure. The barrier height obtained for the MIS structure is higher than those of MS Schottky structure because of the modification of the effective barrier height by the Fe−ZnO NS interlayer. Further, the barrier height, ideality factor and series resistance are determined for the MS and MIS Schottky structures using Norde and Cheung's functions and compared to each other. The estimated interface state density of MIS Schottky structure is lower than that of MS Schottky structure. Experimental results revealed that the Poole-Frenkel emission is the dominant conduction mechanism in the lower bias region whereas Schottky emission is the dominant in the higher bias region for both the Au/n-InP MS and Au/Fe−ZnO NS/n-InP MIS Schottky structures. - Highlights: • Barrier height of Au/n-InP Schottky diode was modified by Fe−ZnO nanostructure interlayer. • MIS structure has a good rectification ratio compared to the MS structure. • The interface state density of MIS structure is lower than that of MS structure. • Poole-Frenkel mechanism is found to dominate in both MS and MIS structure.

  10. Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

    International Nuclear Information System (INI