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Sample records for zno nanostructured film

  1. Laser nanostructuring of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  2. Nanostructured porous ZnO film with enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Wang Lina; Zheng Yingying; Li Xiaoyun; Dong Wenjun; Tang Weihua; Chen Benyong; Li Chaorong; Li Xiao; Zhang Tierui

    2011-01-01

    Well-defined ZnO nanostructured films have been fabricated directly on Zn foil via hydrothermal synthesis. During the fabrication of the ZnO nanostructured films, the Zn foil serves as the Zn source and also the substrate. Porous nanosheet-based, nanotube-based and nanoflower-based ZnO films can all be easily prepared by adjusting the alkali type, reaction time and reaction temperature. The composition, morphology and structure of ZnO films are characterized by X-ray diffraction, scanning electron microscope and high-resolution transmission electron microscope. The porous ZnO nanosheet-based film exhibits enhanced photocatalytic activity in the degradation of Rhodamine B under UV light irradiation. This can be attributed to the high surface area of the ZnO nanosheet and the large percentage of the exposed [001] facet. Moreover, the self-supporting, recyclable and stable ZnO photocatalytic film can be readily recovered and potentially applied for pollution disposal.

  3. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  4. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  5. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    International Nuclear Information System (INIS)

    Arya, Sunil K.; Saha, Shibu; Ramirez-Vick, Jaime E.; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P.

    2012-01-01

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: ► This review highlights various approaches to synthesize ZnO nanostructures and thin films. ► Article highlights the importance of ZnO nanostructures as biosensor matrix. ► Article highlights the advances in various biosensors based on ZnO nanostructures. ► Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review

  6. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    Energy Technology Data Exchange (ETDEWEB)

    Arya, Sunil K., E-mail: sunilarya333@gmail.com [Bioelectronics Program, Institute of Microelectronics, A-Star 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Ramirez-Vick, Jaime E. [Engineering Science and Materials Department, University of Puerto Rico, Mayaguez, PR 00681 (United States); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhansali, Shekhar [Department of Electrical and Computer Engineering, Florida International University, Miami, FL (United States); Singh, Surinder P., E-mail: singh.uprm@gmail.com [National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)

    2012-08-06

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: Black-Right-Pointing-Pointer This review highlights various approaches to synthesize ZnO nanostructures and thin films. Black-Right-Pointing-Pointer Article highlights the importance of ZnO nanostructures as biosensor matrix. Black-Right-Pointing-Pointer Article highlights the advances in various biosensors based on ZnO nanostructures. Black-Right-Pointing-Pointer Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO

  7. Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, P. Suresh; Raj, A. Dhayal [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India); Mangalaraj, D., E-mail: dmraj800@yahoo.co [Department of Nanoscience and Technology, Bharathiar University, Coimbatore-641046 (India); Nataraj, D. [Thin Film and Nanomaterials Laboratory, Department of Physics, Bharathiar University, Coimbatore-641046 (India)

    2010-10-01

    In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

  8. Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Kumar, P. Suresh; Raj, A. Dhayal; Mangalaraj, D.; Nataraj, D.

    2010-01-01

    In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

  9. Effect of indium dopant on surface and mechanical characteristics of ZnO : In nanostructured films

    Energy Technology Data Exchange (ETDEWEB)

    Fang, T.-H.; Kang, S.-H. [Institute of Mechanical and Electromechanical Engineering, National Formosa University, No 64, Wenhua Rd., Huwei, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net

    2008-12-21

    Epitaxial ZnO : In nanorod films were grown on SiO{sub 2} substrates using a chemical solution method with a pre-coated ZnO sputtered seed layer. Structural and surface characterizations of the ZnO : In nanostructured films were achieved by means of x-ray diffraction, a scanning electron microscope, an atomic force microscope and contact angle measurements. The hardness and Young's modulus of the nanostructured films were investigated by nanoindentation measurements. The results showed that when the indium dopant was increased, the hardness and Young's modulus of the films also rose. The films exhibited hydrophobic behaviour with contact angles of about 128-138 deg., and a decrease in the hardness and Young's modulus with decreasing loads or indentation depths. Buckling behaviour took place during the indentation process, and the fracture strength of the films was also discussed.

  10. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  11. Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

    2016-11-01

    Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

  12. Porous nanostructured ZnO films deposited by picosecond laser ablation

    International Nuclear Information System (INIS)

    Sima, Cornelia; Grigoriu, Constantin; Besleaga, Cristina; Mitran, Tudor; Ion, Lucian; Antohe, Stefan

    2012-01-01

    Highlights: ► We deposite porous nanostructured ZnO films by picoseconds laser ablation (PLA). ► We examine changes of the films structure on the experimental parameter deposition. ► We demonstrate PLA capability to produce ZnO nanostructured films free of particulates. - Abstract: Porous nanostructured polycrystalline ZnO films, free of large particulates, were deposited by picosecond laser ablation. Using a Zn target, zinc oxide films were deposited on indium tin oxide (ITO) substrates using a picosecond Nd:YVO 4 laser (8 ps, 50 kHz, 532 nm, 0.17 J/cm 2 ) in an oxygen atmosphere at room temperature (RT). The morpho-structural characteristics of ZnO films deposited at different oxygen pressures (150–900 mTorr) and gas flow rates (0.25 and 10 sccm) were studied. The post-deposition influence of annealing (250–550 °C) in oxygen on the film characteristics was also investigated. At RT, a mixture of Zn and ZnO formed. At substrate temperatures above 350 °C, the films were completely oxidized, containing a ZnO wurtzite phase with crystallite sizes of 12.2–40.1 nm. At pressures of up to 450 mTorr, the porous films consisted of well-distinguished primary nanoparticles with average sizes of 45–58 nm, while at higher pressures, larger clusters (3.1–14.7 μm) were dominant, leading to thicker films; higher flow rates favored clustering.

  13. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  14. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  15. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Energy Technology Data Exchange (ETDEWEB)

    Shaik, Ummar Pasha [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Purkayastha, Debarun Dhar, E-mail: ddebarun@yahoo.com [Department of Physics, National Institute of Technology Nagaland, Chumukedima, Dimapur 797103 (India); Krishna, M. Ghanashyam [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Madhurima, V. [Department of Physics, Central University of Tamil Nadu, Thiruvarur 610004 (India)

    2015-03-01

    Highlights: • Zn metal films were deposited by thermal evaporation, on various substrates. • Upon annealing Zn there is transformation of the Zn nanosheets into ZnO nanowires. • ZnO nanowires are superhydrophobic and exhibit wetting transition on UV exposure. • ZnO will be useful in self-cleaning, mechanical and oxidation resistance surfaces. - Abstract: Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15–0.8 GPa and 18–300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic–hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  16. A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Yamin, E-mail: yaminfengccnuphy@outlook.com; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.cn

    2013-12-25

    Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm{sup −2} illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes.

  17. A novel hierarchical ZnO disordered/ordered bilayer nanostructured film for dye sensitized solar cells

    International Nuclear Information System (INIS)

    Feng, Yamin; Wu, Fei; Jiang, Jian; Zhu, Jianhui; Fodjouong, Ghislain Joel; Meng, Gaoxiang; Xing, Yanmin; Wang, Wenwu; Huang, Xintang

    2013-01-01

    Graphical abstract: A novel hierarchical disordered/ordered bilayer ZnO nanostructured film in the length of 18 μm have been successfully synthesized on the FTO substrate; the hierarchical ZnO nanostructured film electrodes applied in DSSCs exhibit photoelectric conversion efficiency as high as 5.16%. Highlights: •A novel hierarchical ZnO structure film was fabricated on a FTO substrate. •Hierarchical ZnO film is applied as the electrodes for dye sensitized solar cells. •The film possess high specific surface area and fast electron transport effect. •The light-scattering effect of the hierarchical film is pronounced. •The energy conversion efficiency of hierarchical ZnO electrode reaches to 5.16%. -- Abstract: A novel hierarchical ZnO nanostructured film is synthesized via a chemical bath deposition (CBD) method followed by a treatment of thermal decomposition onto a fluorine-doped tin oxide (FTO) substrate. This hierarchical film is composed of disordered ZnO nanorods (NRs) (top layer) and ordered ZnO nanowires (NWs) (bottom layer). The products possess the following features such as high specific surface area, fast electron transport, and pronounced light-scattering effect, which are quite suitable for dye sensitized solar cells (DSSCs) applications. A light-to-electricity conversion efficiency of 5.16% is achieved when the hierarchical ZnO nanostructured film is used as the photoanode under 100 mW cm −2 illumination. This efficiency is found to be much higher than that of the DSSCs with pure ordered ZnO NWs (1.45%) and disordered ZnO NRs (3.31%) photoanodes

  18. Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shijun

    2005-05-15

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

  19. Nanostructured ZnO films: A study of molecular influence on transport properties by impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sappia, Luciano D.; Trujillo, Matias R. [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Lorite, Israel [Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, Linnéstrasse 5, 04103 Leipzig (Germany); Madrid, Rossana E., E-mail: rmadrid@herrera.unt.edu.ar [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Tirado, Monica [NanoProject and Laboratorio de Nanomateriales y Propiedades Dieléctricas, Departamento de Física, Universidad Nacional de Tucumán, Avenida Independencia 1800, Tucumán (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); and others

    2015-10-15

    Graphical abstract: - Highlights: • We study electrical transport in nanostructured ZnO films by impedance spectroscopy. • Bioaggregates on the surface produce strong changes in film transport properties. • This behavior is explained by modeling data with RC parallel circuits. • Electrical responses of ZnO films to aggregates are promising for biosensing. - Abstract: Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like Glucose Oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment to preserve the activity of the enzyme. In this work we study the electrical transport properties of ZnO thin films (TFs) and single crystals (SC) in contact with different solutions by using impedance spectroscopy. We have found that the composition of the liquid, by means of the charge of the ions, produces strong changes in the transport properties of the TF. The enzyme GOx and phosphate buffer solutions have the major effect in the conduction through the films, which can be explained by the entrapment of carriers at the grain boundaries of the TFs. These results can help to design a new concept in glucose biosensing.

  20. Nanostructured ZnO thin films by chemical bath deposition in basic aqueous ammonia solutions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Chu, J.B.; Huang, S.M.; Zhang, D.W.; Bian, Z.Q.; Li, X.D.; Sun, Z. [East China Normal University, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, Shanghai (China); Yin, X.J. [Singapore Polytechnic, Advanced Materials Technology Center, Singapore (Singapore)

    2009-06-15

    This paper presents further insights and observations of the chemical bath deposition (CBD) of ZnS thin films using an aqueous medium involving Zn-salt, ammonium sulfate, aqueous ammonia, and thiourea. Results on physical and chemical properties of the grown layers as a function of ammonia concentration are reported. Physical and chemical properties were analyzed using scanning electron microscopy (SEM), X-ray energy dispersive (EDX), and X-ray diffraction (XRD). Rapid growth of nanostructured ZnO films on fluorine-doped SnO{sub 2} (FTO) glass substrates was developed. ZnO films crystallized in a wurtzite hexagonal structure and with a very small quantity of Zn(OH){sub 2} and ZnS phases were obtained for the ammonia concentration ranging from 0.75 to 2.0 M. Flower-like and columnar nanostructured ZnO films were deposited in two ammonia concentration ranges, respectively: one between 0.75 and 1.0 M and the other between 1.4 and 2.0 M. ZnS films were formed with a high ammonia concentration of 3.0 M. The formation mechanisms of ZnO, Zn(OH){sub 2}, and ZnS phases were discussed in the CBD process. The developed technique can be used to directly and rapidly grow nanostructured ZnO film photoanodes. Annealed ZnO nanoflower and columnar nanoparticle films on FTO substrates were used as electrodes to fabricate the dye sensitized solar cells (DSSCs). The DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 0.84%, which is higher compared to that (0.45%) of the cell being constructed using a photoanode of columnar nanoparticle ZnO film. The results have demonstrated the potential applications of CBD nanostructured ZnO films for photovoltaic cells. (orig.)

  1. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  2. ZnO thin films and nanostructures for emerging optoelectronic applications

    Science.gov (United States)

    Rogers, D. J.; Teherani, F. H.; Sandana, V. E.; Razeghi, M.

    2010-02-01

    ZnO-based thin films and nanostructures grown by PLD for various emerging optoelectronic applications. AZO thin films are currently displacing ITO for many TCO applications due to recent improvements in attainable AZO conductivity combined with processing, cost and toxicity advantages. Advances in the channel mobilities and Id on/off ratios in ZnO-based TTFTs have opened up the potential for use as a replacement for a-Si in AM-OLED and AM-LCD screens. Angular-dependent specular reflection measurements of self-forming, moth-eye-like, nanostructure arrays grown by PLD were seen to have green gap in InGaN-based LEDs was combated by substituting low Ts PLD n-ZnO for MOCVD n-GaN in inverted hybrid heterojunctions. This approach maintained the integrity of the InGaN MQWs and gave LEDs with green emission at just over 510 nm. Hybrid n-ZnO/p-GaN heterojunctions were also seen to have the potential for UV (375 nm) EL, characteristic of ZnO NBE emission. This suggests that there was significant hole injection into the ZnO and that such LEDs could profit from the relatively high exciton binding energy of ZnO.

  3. Fabrication of nanostructured ZnO film as a hole-conducting layer of organic photovoltaic cell

    Science.gov (United States)

    Kim, Hyomin; Kwon, Yiseul; Choe, Youngson

    2013-05-01

    We have investigated the effect of fibrous nanostructured ZnO film as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the concentration of zinc acetate dihydrate, the changes of performance characteristics were evaluated. Fibrous nanostructured ZnO film was prepared by sol-gel process and annealed on a hot plate. As the concentration of zinc acetate dihydrate increased, ZnO fibrous nanostructure grew from 300 to 600 nm. The obtained ZnO nanostructured fibrous films have taken the shape of a maze-like structure and were characterized by UV-visible absorption, scanning electron microscopy, and X-ray diffraction techniques. The intensity of absorption bands in the ultraviolet region was increased with increasing precursor concentration. The X-ray diffraction studies show that the ZnO fibrous nanostructures became strongly (002)-oriented with increasing concentration of precursor. The bulk heterojunction photovoltaic cells were fabricated using poly(3-hexylthiophene-2,5-diyl) and indene-C60 bisadduct as active layer, and their electrical properties were investigated. The external quantum efficiency of the fabricated device increased with increasing precursor concentration.

  4. Magnetic Properties of Gadolinium-Doped ZnO Films and Nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-08-29

    The magnetic properties of Gd-doped ZnO films and nanostructures are important to the development of next-generation spintronic devices. Here, we elucidate the significant role played by Gd-oxygen-deficiency defects in mediating/inducing ferromagnetic coupling in in situ Gd-doped ZnO thin films deposited at low oxygen pressure by pulsed laser deposition (PLD). Samples deposited at higher oxygen pressures exhibited diamagnetic responses. Vacuum annealing was used on these diamagnetic samples (grown at a relatively high oxygen pressures) to create oxygen- deficiency defects with the aim of demonstrating reproducibility of room-temperature ferromagnetism (RTFM). Samples annealed at oxygen environment exhibited super‐ paramagnetism and blocking-temperature effects. The samples possessed secondary phases; Gd segregation led to superparamagnetism. Theoretical studies showed a shift of the 4f level of Gd to the conduction band minimum (CBM) in Gd-doped ZnO nanowires, which led to an overlap with the Fermi level, resulting in strong exchange coupling and consequently RTFM.

  5. Photoelectrochemical study of nanostructured ZnO thin films for hydrogen generation from water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Wolcott, Abraham; Zhang, Jin Z. [Department of Chemistry and Biochemistry, University of California, Santa Cruz 1156 High St. Santa Cruz, CA 95064 (United States); Smith, Wilson A.; Zhao, Yiping [Department of Physics and Astronomy, University of Georgia, Athens, GA 30602 (United States); Kuykendall, Tevye R. [Department of Chemistry, University of California, Berkeley Berkeley, CA 94720 (United States)

    2009-06-23

    Photoelectrochemical cells based on traditional and nanostructured ZnO thin films are investigated for hydrogen generation from water splitting. The ZnO thin films are fabricated using three different deposition geometries: normal pulsed laser deposition, pulsed laser oblique-angle deposition, and electron-beam glancing-angle deposition. The nanostructured films are characterized by scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and photoelectrochemical techniques. Normal pulsed laser deposition produces dense thin films with ca. 200 nm grain sizes, while oblique-angle deposition produces nanoplatelets with a fishscale morphology and individual features measuring ca. 900 by 450 nm on average. In contrast, glancing-angle deposition generates a highly porous, interconnected network of spherical nanoparticles of 15-40 nm diameter. Mott-Schottky plots show the flat band potential of pulsed laser deposition, oblique-angle deposition, and glancing-angle deposition samples to be -0.29, -0.28 and +0.20 V, respectively. Generation of photocurrent is observed at anodic potentials and no limiting photocurrents were observed with applied potentials up to 1.3 V for all photoelectrochemical cells. The effective photon-to-hydrogen efficiency is found to be 0.1%, 0.2% and 0.6% for pulsed laser deposition, oblique-angle deposition and glancing-angle deposition samples, respectively. The photoelectrochemical properties of the three types of films are understood to be a function of porosity, crystal defect concentration, charge transport properties and space charge layer characteristics. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  6. Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films

    Science.gov (United States)

    Cretı, A.; Valerini, D.; Taurino, A.; Quaranta, F.; Lomascolo, M.; Rella, R.

    2012-04-01

    The optical response by NO2 gas adsorption at different concentrations has been investigated, at room temperature, in ZnO nanostructured films grown by controlled vapor phase deposition. The variation (quenching) in the photoluminescence signal from excitonic and defects bands, due to the interactions between the oxidizing gas molecules and the sample surface, has been detected and dynamic responses and calibration curves as a function of gas concentration have been obtained and analyzed for each band. We showed that the sensing response results larger in excitonic band than in defect one and that the emission signal rises from two different quenchable and unquenchable states. A simple model was proposed in order to explain the quenching processes on the emission intensity and to correlate them to the morphological features of the samples. Finally, the reversibility of the quenching effects has also been tested at high gas concentration.

  7. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Kenanakis, G., E-mail: gkenanak@iesl.forth.gr [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Katsarakis, N. [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece)

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  8. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  9. Studies on the adsorption of RuN{sub 3} dye on sheet-like nanostructured porous ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Rong; Pan, Jie; Briggs, Evan P.; Thrash, Marvin; Kerr, Lei L. [Department of Paper and Chemical Engineering, Miami University, Oxford, OH 45056 (United States)

    2008-04-15

    The interface between the ZnO and dye directly impacts the dye-sensitized solar cell (DSSC) performance. Nanostructured porous ZnO film was developed by a simple chemical solution process. Scanning electron microscope (SEM) images demonstrated the uniform ZnO films with sheet-like nanostructure. Adsorption studies indicated that the maximum adsorption capacity of RuN{sub 3} dye on the surface of ZnO films was approximately 0.016 mmol RuN{sub 3}/g ZnO films. Adsorption studies were conducted at 25 and 40 C. The results showed that the dye adsorption was significantly influenced by temperatures. Moreover, the problem of the dye aggregation on the ZnO surface was reduced at higher adsorption temperatures. The adsorption chemistry was studied with Raman spectroscopy. (author)

  10. Structural and optical properties of ZnO nanostructures electrochemically synthesized on AZO/Ag/AZO-multilayer-film-coated polyethersulfone substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; Yoo, Chanho; No, Youngsoo; Kim, Suyoun; Kim, Taewhan; Cho, Woonjo; Kim, Jinyoung

    2012-01-01

    ZnO nanostructures were formed on Al-doped ZnO (AZO)/Ag/AZO-multilayer-film-coated flexible polyethersulfone (PES) substrates at low temperature by using an electrochemical deposition method. The resistivity of the AZO/Ag/AZO multilayer films decreased with increasing thickness of the Ag film. X-ray diffraction patterns for the ZnO nanostructures showed that the crystal structure of the ZnO was hexagonal wurtzite and that the orientation was along the c-axis perpendicular to the substrate. Scanning electron microscopy images showed that the ZnO nanostructures grown at current densities of - 1.0 and - 1.5 mA/cm 2 were ZnO nanorods with diameters of 150 nm and ZnO nanoflowers with a planar dimension, respectively. Photoluminescence spectra showed that the band-edge emission peak of the ZnO nanostructures dominantly appeared in the ultraviolet region. These results showed that ZnO nanorods and nanoflowers with high quality were synthesized on AZO/Ag/AZO-multilayer-film-coated PES substrates.

  11. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    International Nuclear Information System (INIS)

    Garino, Nadia; Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica; Gerbaldi, Claudio

    2014-01-01

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g −1 ) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm −2 after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency

  12. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

    2014-12-05

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

  13. Acoustoelectric Effect on the Responses of SAW Sensors Coated with Electrospun ZnO Nanostructured Thin Film

    Directory of Open Access Journals (Sweden)

    Zafer Ziya Ozturk

    2012-08-01

    Full Text Available In this study, zinc oxide (ZnO was a very good candidate for improving the sensitivity of gas sensor technology. The preparation of an electrospun ZnO nanostructured thin film on a 433 MHz Rayleigh wave based Surface Acoustic Wave (SAW sensor and the investigation of the acoustoelectric effect on the responses of the SAW sensor are reported. We prepared an electrospun ZnO nanostructured thin film on the SAW devices by using an electrospray technique. To investigate the dependency of the sensor response on the structure and the number of the ZnO nanoparticles, SAW sensors were prepared with different coating loads. The coating frequency shifts were adjusted to fall between 100 kHz and 2.4 MHz. The sensor measurements were performed against VOCs such as acetone, trichloroethylene, chloroform, ethanol, n-propanol and methanol vapor. The sensor responses of n-propanol have opposite characteristics to the other VOCs, and we attributed these characteristics to the elastic effect/acoustoelectric effect.

  14. Nanostructured ZnO films in forms of rod, plate and flower: Electrodeposition mechanisms and characterization

    International Nuclear Information System (INIS)

    Kıcır, Nur; Tüken, Tunç; Erken, Ozge; Gumus, Cebrail; Ufuktepe, Yuksel

    2016-01-01

    Highlights: • Electrosynthesis of ZnO nanostructures in the form of plate, rod and flower. • The role of type and concentration of supporting electrolytes on growth mechanism. • Detailed analysis of morphologies, in comparison with the Literature. • Nanoplate form of ZnO exhibits higher Fermi level and lower band gap. - Abstract: Uniformity and reproducibility of well-defined ZnO nanostructures are particularly important issues for fabrication and applications of these nanomaterials. In present study, we report selective morphology control during electrodeposition, by adjusting the hydroxyl generation rate and Zn(OH)_2 deposition. In presence of remarkably high chloride concentration (0.3 M) and −1.0 V deposition potential, slow precipitation conditions were provided in 5 mM Zn(NO_3)_2 solution. By doing so, we have obtained highly ordered, vertically aligned and uniformly spaced hexagon shaped nanoplates, on ITO surface. We have also investigated the mechanism for shifting the morphology from rod/plate to flower like structure of ZnO, for better understanding the reproducibility. For this reason, the influence of various supporting electrolytes (sodium/ammonium salts of acetate) has been investigated for interpretation of the influence of OH"− concentration nearby the surface. From rod to plate and flower nanostructures, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis were realized for characterization, also the optical properties were studied.

  15. Nanostructured ZnO films in forms of rod, plate and flower: Electrodeposition mechanisms and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kıcır, Nur, E-mail: nurkicir@gmail.com [Chemistry Department, Çukurova University, 01330 Adana (Turkey); Tüken, Tunç [Chemistry Department, Çukurova University, 01330 Adana (Turkey); Erken, Ozge [Physics Department, Adiyaman University, 02040 Adıyaman (Turkey); Gumus, Cebrail; Ufuktepe, Yuksel [Physics Department, Çukurova University, 01330 Adana (Turkey)

    2016-07-30

    Highlights: • Electrosynthesis of ZnO nanostructures in the form of plate, rod and flower. • The role of type and concentration of supporting electrolytes on growth mechanism. • Detailed analysis of morphologies, in comparison with the Literature. • Nanoplate form of ZnO exhibits higher Fermi level and lower band gap. - Abstract: Uniformity and reproducibility of well-defined ZnO nanostructures are particularly important issues for fabrication and applications of these nanomaterials. In present study, we report selective morphology control during electrodeposition, by adjusting the hydroxyl generation rate and Zn(OH){sub 2} deposition. In presence of remarkably high chloride concentration (0.3 M) and −1.0 V deposition potential, slow precipitation conditions were provided in 5 mM Zn(NO{sub 3}){sub 2} solution. By doing so, we have obtained highly ordered, vertically aligned and uniformly spaced hexagon shaped nanoplates, on ITO surface. We have also investigated the mechanism for shifting the morphology from rod/plate to flower like structure of ZnO, for better understanding the reproducibility. For this reason, the influence of various supporting electrolytes (sodium/ammonium salts of acetate) has been investigated for interpretation of the influence of OH{sup −} concentration nearby the surface. From rod to plate and flower nanostructures, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis were realized for characterization, also the optical properties were studied.

  16. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Energy Technology Data Exchange (ETDEWEB)

    Loukanov, Alexandre, E-mail: loukanov@mail.saitama-u.ac.jp [Saitama University, Department of Chemistry, Faculty of Science (Japan); Filipov, Chavdar [University of Forestry, Department of Infectious pathology, hygiene, technology and control of food stuffs of animal origin, Faculty of Veterinary Medicine (Bulgaria); Valcheva, Violeta [Bulgarian Academy of Science, Department of Infectious Diseases, Institute of microbiology (Bulgaria); Lecheva, Marta [University of Mining and Geology “St. Ivan Rilski”, Laboratory of Engineering NanoBiotechnology, Department of Engineering Geoecology (Bulgaria); Emin, Saim [University of Nova Gorica, Materials Research Laboratory (Slovenia)

    2015-04-15

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  17. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    International Nuclear Information System (INIS)

    Loukanov, Alexandre; Filipov, Chavdar; Valcheva, Violeta; Lecheva, Marta; Emin, Saim

    2015-01-01

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications

  18. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Science.gov (United States)

    Loukanov, Alexandre; Filipov, Chavdar; Valcheva, Violeta; Lecheva, Marta; Emin, Saim

    2015-04-01

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600-1000 nm). They have been prepared by using both wet sol-gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  19. Visible and UV photo-detection in ZnO nanostructured thin films via simple tuning of solution method.

    Science.gov (United States)

    Khokhra, Richa; Bharti, Bandna; Lee, Heung-No; Kumar, Rajesh

    2017-11-08

    This study demonstrates significant visible light photo-detection capability of pristine ZnO nanostructure thin films possessing substantially high percentage of oxygen vacancies [Formula: see text] and zinc interstitials [Formula: see text], introduced by simple tuning of economical solution method. The demonstrated visible light photo-detection capability, in addition to the inherent UV light detection ability of ZnO, shows great dependency of [Formula: see text] and [Formula: see text] with the nanostructure morphology. The dependency was evaluated by analyzing the presence/percentage of [Formula: see text] and [Formula: see text] using photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) measurements. Morphologies of ZnO viz. nanoparticles (NPs), nanosheets (NSs) and nanoflowers (NFs), as a result of tuning of synthesis method contended different concentrations of defects, demonstrated different photo-detection capabilities in the form of a thin film photodetector. The photo-detection capability was investigated under different light excitations (UV; 380~420 nm, white ; λ > 420 nm and green; 490~570 nm). The as fabricated NSs photodetector possessing comparatively intermediate percentage of [Formula: see text] ~ 47.7% and [Formula: see text] ~ 13.8% exhibited superior performance than that of NPs and NFs photodetectors, and ever reported photodetectors fabricated by using pristine ZnO nanostructures in thin film architecture. The adopted low cost and simplest approach makes the pristine ZnO-NSs applicable for wide-wavelength applications in optoelectronic devices.

  20. Superhydrophobic ZnAl double hydroxide nanostructures and ZnO films on Al and glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    De, Debasis, E-mail: debasis.de@bcrec.ac.in [Electronics and Instrumentation Engineering Department, Dr. B C Roy Engineering College, Durgapur, West Bengal 713206 (India); Sarkar, D.K. [Centre Universitaire de Recherche sur l' Aluminium (CURAL), L' Université du Québec à Chicoutimi, 555 Blvd. Université, Chicoutimi, Saguenay, Québec G7H 2B1 (Canada)

    2017-01-01

    Superhydrophobic nanostructured ZnAl: layered double hydroxides (LDHs) and ZnO films have been fabricated on Al and glass substrates, respectively, by a simple and cost effective chemical bath deposition technique. Randomly oriented hexagonal patterned of ZnAl: LDHs thin nanoplates are clearly observed on Al-substrate in the scanning electron microscopic images. The average size of these hexagonal plates is ∼4 μm side and ∼30 nm of thickness. While on the glass substrate, a oriented hexagonal patterned ZnO nanorods (height ∼5 μm and 1 μm diameter) are observed and each rod is further decorated throughout the top few nanometers with several nanosteps. At the top of the nanorod, a perfectly hexagonal patterned ZnO surface with ∼250 nm sides is observed. The tendency to form hexagonal morphological features is due to the hexagonal crystal structure of ZnO confirmed from X-ray diffraction patterns and transmission electron microscopy image. The ZnAl: LDHs and/or ZnO coated substrates have been passivated by using stearic acid (SA) molecules. Infrared spectra of passivated ZnAl: LDHs coated substrates confirm the presence of SA. X-ray diffraction pattern also corroborates the results of infrared spectrum. The contact angle of the as prepared samples is zero. The superhydrophobicity is achieved by observing contact angle of ∼161° with a hysteresis of ∼4° for Al-substrate. On the glass substrate, a higher contact angle of ∼168° with a lower hysteresis of ∼3° is observed. A lower surface roughness of ∼4.93 μm is measured on ZnAl: LDHs surface layer on the Al substrate as compare to a higher surface roughness of 6.87 μm measured on ZnO layer on glass substrate. The superhydrophobicity of passivated nanostructured films on two different substrates is observed due to high surface roughness and low surface energy. - Highlights: • ZnAl: layered double hydroxides (LDHs) nanoplates are fabricated on Al substrate. • ZnO nanorods are fabricated on

  1. Nanostructured ZnO thin films prepared by sol–gel spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

    2014-10-30

    Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

  2. Nanostructured ZnO films for potential use in LPG gas sensors

    Science.gov (United States)

    Latyshev, V. M.; Berestok, T. O.; Opanasyuk, A. S.; Kornyushchenko, A. S.; Perekrestov, V. I.

    2017-05-01

    The aim of the work was to obtain ZnO nanostructures with heightened surface area and to study relationship between formation method and gas sensor properties towards propane-butane mixture (LPG). In order to synthesize ZnO nanostructures chemical and physical formation methods have been utilized. The first one was chemical bath deposition technology and the second one magnetron sputtering of Zn followed by oxidation. Optimal method and technological parameters corresponding to formation of material with the highest sensor response have been determined experimentally. Dynamical gas sensor response at different temperature values and dependencies of the sensor sensitivity on the temperature at different LPG concentrations in air have been investigated. It has been found, that sensor response depends on the sample morphology and has the highest value for the structure consisting of thin nanowires. The factors that lead to the decrease in the gas sensor operating temperature have been determined.

  3. Effects of stabilizer ratio on photoluminescence properties of sol-gel ZnO nano-structured thin films

    International Nuclear Information System (INIS)

    Boudjouan, F.; Chelouche, A.; Touam, T.; Djouadi, D.; Khodja, S.; Tazerout, M.; Ouerdane, Y.; Hadjoub, Z.

    2015-01-01

    Nanostructured ZnO thin films with different molar ratios of MEA to zinc acetate (0.5, 1.0, 1.5 and 2.0) have been deposited on glass substrates by a sol–gel dip coating technique. X-ray diffraction, Scanning Electron Microscopy, UV–visible spectrophotometry and photoluminescence spectroscopy have been employed to investigate the effect of MEA stabilizer ratio on structural, morphological, absorbance and emission properties of the ZnO thin films. Diffraction patterns have shown that all the films are polycrystalline and exhibit a wurtzite hexagonal structure. The c axis orientation has been enhanced with increasing stabilizer ratio. SEM micrographs have revealed that the morphology of the ZnO films depend on stabilizer ratio. The UV–visible absorption spectra have demonstrated that the optical absorption is affected by stabilizer ratio. The photoluminescence spectra have indicated one ultraviolet and two visible emission bands (green and red), while band intensities are found to be dependent on stabilizer ratio. ZnO thin films deposited at MEA ratio of 1.0 show the highest UV emission while the minimum UV emission intensity is observed in thin films deposited at ratio of 0.5 and the maximum green has been recorded for films deposited at MEA ratio of 2.0. - Highlight: • c axis orientation increases with increasing MEA ratio. • The increase of MEA ration from 0.5 to 1.0 enhances greatly the UV emission. • The larger I UV /I visible is obtained for the MEA to Zn ratio of 1:1. • The MEA ratio of 0.5 favors the formation of large density of V zn . • The MEA ratio of 2.0 increases the V o density

  4. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  5. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

    2007-10-15

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

  6. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    International Nuclear Information System (INIS)

    Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

    2007-01-01

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

  7. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  8. Synthesis and Characterization of Nanostructured ZnO Thick Film Gas Sensors Prepared by Screen Printing Method

    Directory of Open Access Journals (Sweden)

    R. Y. BORSE

    2010-12-01

    Full Text Available Nanosized ZnO was prepared by self propagating solution combustion synthesis method. The synthesized ZnO thick films were deposited on alumina substrate by using standard screen printing technique and fired at 700 0C. The films were characterized by X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and energy dispersive analysis of X-ray (EDAX. The electrical behaviors of ZnO thick films were investigated. From XRD spectra it is revealed that ZnO films are polycrystalline in nature. The average grain size of 87.44 nm has been estimated for the film fired at 700 0C using Scherrer’s formula. EDAX clearly shows the peaks corresponding to Zn and O element which confirms the successful growth of ZnO films. Gas sensing study for these samples shows high sensitivity and selectivity towards NO2 at all operating temperatures. The resistivity, TCR and activation energy of the ZnO films have been evaluated and discussed.

  9. Morphologies of Sol–Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures

    Directory of Open Access Journals (Sweden)

    Chandra Sudhir

    2007-01-01

    Full Text Available AbstractWe have shown that the morphological features of the sol–gel derived thin films of ZnO depend strongly on the choice of the precursor materials. In particular, we have used zinc nitrate and zinc acetate as the precursor materials. While the films using zinc acetate showed a smoother topography, those prepared by using zinc nitrate exhibited dendritic character. Both types of films were found to be crystalline in nature. The crystallite dimensions were confined to the nanoscale. The crystallite size of the nanograins in the zinc nitrate derived films has been found to be smaller than the films grown by using zinc acetate as the precursor material. Selected area electron diffraction patterns in the case of both the precursor material has shown the presence of different rings corresponding to different planes of hexagonal ZnO crystal structure. The results have been discussed in terms of the fundamental considerations and basic chemistry governing the growth kinetics of these sol–gel derived ZnO films with both the precursor materials.

  10. Preparation and characterization of nanostructured ZnO thin films for ...

    Indian Academy of Sciences (India)

    Administrator

    find applications in chemical sensors and solar cells. (Musat et ... PEC cells convert solar energy into storable chemical ... Films were used as working electrodes (WE) in PEC cells. .... size, only suggests a random nucleation mechanism, and.

  11. Surface nanostructuring of thin film composite membranes via grafting polymerization and incorporation of ZnO nanoparticles

    Science.gov (United States)

    Isawi, Heba; El-Sayed, Magdi H.; Feng, Xianshe; Shawky, Hosam; Abdel Mottaleb, Mohamed S.

    2016-11-01

    A new approach for modification of polyamid thin film composite membrane PA(TFC) using synthesized ZnO nanoparticles (ZnO NPs) was shown to enhance the membrane performances for reverse osmosis water desalination. First, active layer of synthesis PA(TFC) membrane was activated with an aqueous solution of free radical graft polymerization of hydrophilic methacrylic acid (MAA) monomer onto the surface of the PA(TFC) membrane resulting PMAA-g-PA(TFC). Second, the PA(TFC) membrane has been developed by incorporation of ZnO NPs into the MAA grafting solution resulting the ZnO NPs modified PMAA-g-PA(TFC) membrane. The surface properties of the synthesized nanoparticles and prepared membranes were investigated using the FTIR, XRD and SEM. Morphology studies demonstrated that ZnO NPs have been successfully incorporated into the active grafting layer over PA(TFC) composite membranes. The zinc leaching from the ZnO NPs modified PMAA-g-PA(TFC) was minimal, as shown by batch tests that indicated stabilization of the ZnO NPs on the membrane surfaces. Compared with the a pure PA(TFC) and PMAA-g-PA(TFC) membranes, the ZnO NPs modified PMAA-g-PA(TFC) was more hydrophilic, with an improved water contact angle (∼50 ± 3°) over the PMAA-g-PA(TFC) (63 ± 2.5°). The ZnO NPs modified PMAA-g-PA(TFC) membrane showed salt rejection of 97% (of the total groundwater salinity), 99% of dissolved bivalent ions (Ca2+, SO42-and Mg2+), and 98% of mono valent ions constituents (Cl- and Na+). In addition, antifouling performance of the membranes was determined using E. coli as a potential foulant. This demonstrates that the ZnO NPs modified PMAA-g-PA(TFC) membrane can significantly improve the membrane performances and was favorable to enhance the selectivity, permeability, water flux, mechanical properties and the bio-antifouling properties of the membranes for water desalination.

  12. Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

    Science.gov (United States)

    Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

    2012-09-01

    We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

  13. ZnO Film Photocatalysts

    Directory of Open Access Journals (Sweden)

    Bosi Yin

    2014-01-01

    Full Text Available We have synthesized high-quality, nanoscale ultrathin ZnO films at relatively low temperature using a facile and effective hydrothermal approach. ZnO films were characterized by scanning electron microscope (SEM, X-ray diffraction (XRD, Raman spectroscopy, photoluminescence spectra (PL, and UV-vis absorption spectroscopy. The products demonstrated 95% photodegradation efficiency with Congo red (CR after 40 min irradiation. The photocatalytic degradation experiments of methyl orange (MO and eosin red also were carried out. The results indicate that the as-obtained ZnO films might be promising candidates as the excellent photocatalysts for elimination of waste water.

  14. Growth of novel ZnO nanostructures by soft chemical routes

    International Nuclear Information System (INIS)

    Saravana Kumar, R.; Sathyamoorthy, R.; Matheswaran, P.; Sudhagar, P.; Kang, Yong Soo

    2010-01-01

    Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

  15. Growth of novel ZnO nanostructures by soft chemical routes

    Energy Technology Data Exchange (ETDEWEB)

    Saravana Kumar, R. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sathyamoorthy, R., E-mail: rsathya59@gmail.co [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Matheswaran, P. [PG and Research, Department of Physics, Kongunadu Arts and Science College (Autonomous), Coimbatore 641 029, Tamil Nadu (India); Sudhagar, P.; Kang, Yong Soo [Energy Materials Laboratory, WCU Program Department of Energy Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-09-10

    Research highlights: Fabrication of diverse ZnO nanostructures through soft chemical routes is both fundamentally interesting and technologically important. Accordingly, in the present work novel ZnO nanostructures namely nanorods/nanospines were grown on glass substrate by integrating SILAR and CBD techniques. This simple approach not only would lead to the development of an effective and commercial growth process for diverse ZnO nanostructures, but also lead to the large-scale preparation of other nanomaterials for many important applications in nanotechnology. - Abstract: We explore a facile route to prepare one-dimensional (1D) ZnO nanostructures including nanorods/nanospines on glass substrates by integrating inexpensive successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) methods. The effect of seed layer on the growth and morphology of the ZnO nanostructures was investigated. Accordingly, the surface modification of the seed layer prepared by SILAR was carried out by employing two different drying processes namely (a) allowing the hot substrate to cool for certain period of time before immersing in the ion-exchange bath, and (b) immediate immersion of the hot substrate into the ion-exchange bath. X-ray diffraction (XRD) analysis of the ZnO films revealed hexagonal wurtzite structure with preferential orientation along c-axis, while the scanning electron microscopy (SEM) revealed the dart-like and spherical shaped ZnO seed particles. ZnO nanostructures grown by CBD over the dart-like and spherical shaped ZnO seed particles resulted in the hierarchical and aligned ZnO nanospines/nanorods respectively. Room temperature photoluminescence (PL) study exhibited highly intense UV emission with weak visible emissions in the visible region. The growth mechanism and the role of seed layer morphology on the formation of ZnO nanostructures were discussed.

  16. Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects

    Energy Technology Data Exchange (ETDEWEB)

    Simimol, A. [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Anappara, Aji A. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Greulich-Weber, S. [Department of Physics, Nanophotonic Materials, Faculty of Science, University of Paderborn, 33095 Paderborn (Germany); Chowdhury, Prasanta [Nanomaterials Research Lab, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017 (India); Barshilia, Harish C., E-mail: harish@nal.res.in

    2015-06-07

    We report the growth of un-doped and cobalt doped ZnO nanostructures fabricated on FTO coated glass substrates using electrodeposition method. A detailed study on the effects of dopant concentration on morphology, structural, optical, and magnetic properties of the ZnO nanostructures has been carried out systematically by varying the Co concentration (c.{sub Co}) from 0.01 to 1 mM. For c.{sub Co }≤ 0.2 mM, h-wurtzite phase with no secondary phases of Co were present in the ZnO nanostructures. For c.{sub Co} ≤ 0.2 mM, the photoluminescence spectra exhibited a decrease in the intensity of ultraviolet emission as well as band-gap narrowing with an increase in dopant concentration. All the doped samples displayed a broad emission in the visible range and its intensity increased with an increase in Co concentration. It was found that the defect centers such as oxygen vacancies and zinc interstitials were the source of the visible emission. The X-ray photoelectron spectroscopy studies revealed, Co was primarily in the divalent state, replacing the Zn ion inside the tetrahedral crystal site of ZnO without forming any cluster or secondary phases of Co. The un-doped ZnO nanorods exhibited diamagnetic behavior and it remained up to a c.{sub Co} of 0.05 mM, while for c.{sub Co }> 0.05 mM, the ZnO nanostructures exhibited ferromagnetic behavior at room temperature. The coercivity increased to 695 G for 0.2 mM Co-doped sample and then it decreased for c.{sub Co }> 0.2 mM. Our results illustrate that up to a threshold concentration of 0.2 mM, the strong ferromagnetism is due to the oxygen vacancy defects centers, which exist in the Co-doped ZnO nanostructures. The origin of strong ferromagnetism at room temperature in Co-doped ZnO nanostructures is attributed to the s-d exchange interaction between the localized spin moments resulting from the oxygen vacancies and d electrons of Co{sup 2+} ions. Our findings provide a new insight for tuning the

  17. Synthesis and characterization of ZnO nanostructures on noble-metal coated substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dikovska, A.Og. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia 1784 (Bulgaria); Atanasova, G.B. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia (Bulgaria); Avdeev, G.V. [Rostislaw Kaischew Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev str., bl. 11, 1113 Sofia (Bulgaria); Nedyalkov, N.N. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia 1784 (Bulgaria)

    2016-06-30

    Highlights: • ZnO nanostructures were fabricated on Au–Ag alloy coated silicon substrates by applying pulsed laser deposition. • Morphology of the ZnO nanostructures was related to the Au–Ag alloy content in the catalyst layer. • Increasing the Ag content in Au–Ag catalyst layer changes the morphology of the ZnO nanostructures from nanorods to nanobelts. - Abstract: In this work, ZnO nanostructures were fabricated on noble-metal (Au, Ag and Au–Ag alloys) coated silicon substrates by applying pulsed laser deposition. The samples were prepared at a substrate temperature of 550 °C, an oxygen pressure of 5 Pa, and a laser fluence of 2 J cm{sup −2} – process parameters usually used for deposition of smooth and dense thin films. The metal layer's role is substantial for the preparation of nanostructures. Heating of the substrate changed the morphology of the metal layer and, subsequently, nanoparticles were formed. The use of different metal particles resulted in different morphologies and properties of the ZnO nanostructures synthesized. The morphology of the ZnO nanostructures was related to the Au–Ag alloy's content of the catalyst layer. It was found that the morphology of the ZnO nanostructures evolved from nanorods to nanobelts as the ratio of Au/Ag in the alloy catalyst was varied. The use of a small quantity of Ag in the Au–Ag catalyst (Au{sub 3}Ag) layer resulted predominantly in the deposition of ZnO nanorods. A higher Ag content in the catalyst alloy (AuAg{sub 2}) layer resulted in the growth of a dense structure of ZnO nanobelts.

  18. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  19. Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

    International Nuclear Information System (INIS)

    Jimenez-Garcia, F.N.; Espinosa-Arbelaez, D.G.; Vargas-Hernandez, C.; Real, A. del; Rodriguez-Garcia, M.E.

    2011-01-01

    ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl 2 complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl 2 , 0.1 M MnCl 2, and a second solution of 0.1 ml of NH 4 OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

  20. Characterization of nanostructures of ZnO and ZnMnO films deposited by successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Garcia, F.N. [Departamento de Fisica y Matematicas, Universidad Autonoma de Manizales, Antigua Estacion del Ferrocarril, Manizales, Caldas (Colombia); Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Espinosa-Arbelaez, D.G. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Posgrado en Ciencia e Ingenieria Materiales, Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Mexico DF (Mexico); Vargas-Hernandez, C. [Departamento de Fisica y Quimica, Universidad Nacional de Colombia, Sede Manizales, Campus la Nubia, Manizales, Caldas (Colombia); Real, A. del [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico); Rodriguez-Garcia, M.E., E-mail: marioga@fata.unam.mx [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Blv. Juriquilla 3001, Juriquilla, Queretaro, C.P. 76230 (Mexico)

    2011-09-01

    ZnO and ZnMnO thin films were obtained by the successive ionic layer adsorption and reaction (SILAR) method. All thin films were deposited on glass microscope slide. A precursor solution of 0.1 M of ZnCl{sub 2} complexed with ammonium hydroxide and water close to boiling point (92 deg. C) as a second solution was used for the ZnO films. An uncomplexed bath comprised of 0.1 M ZnCl{sub 2}, 0.1 M MnCl{sub 2,} and a second solution of 0.1 ml of NH{sub 4}OH with water close to boiling point was used for the ZnMnO films. The film samples were deposited by the SILAR method and annealed at 200 deg. C for 15 min. These samples were characterized using X-Ray Diffraction (XRD), Scanning Electron Microscopy with Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscope. Atomic absorption was used to determine quantitatively the amount of Mn incorporated into the films. According to the XRD patterns these films were polycrystalline with wurtzite hexagonal structure. The morphology of the ZnO films constituted by rice-like and flower-like structures changed significantly to nanosheet structures with the Mn incorporation. The Mn inclusion in a ZnO structure was less than 4% according to the results from EDS, XRD, and atomic absorption.

  1. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  2. A Novel Sensor for VOCs Using Nanostructured ZnO and MEMS Technologies

    Directory of Open Access Journals (Sweden)

    H. J. Pandya

    2012-03-01

    Full Text Available A sensor for detection of vapors of volatile organic compounds (VOCs incorporating nanostructured zinc oxide film and silicon micromachining is reported. One of the key features of the sensor is the use of nanostructured ZnO material which has been synthesized using a novel low cost process. Considerable reduction in the operating temperature of the sensor has been achieved due to the use of nanostructured ZnO material as compared to a sensor having ZnO thin film as the sensing layer. The sensor is formed on a micromachined silicon platform thereby reducing the heat loss. This resulted in reduction in power consumption. The sensor has been tested for a variety of VOCs such as: ethanol, iso-propyl alcohol and acetone. The maximum sensitivity of sensor was observed for ethanol vapors.

  3. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

    OpenAIRE

    Hullavarad, SS; Hullavarad, NV; Karulkar, PC; Luykx, A; Valdivia, P

    2007-01-01

    AbstractThe ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise a...

  4. Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

    Directory of Open Access Journals (Sweden)

    Luykx A

    2007-01-01

    Full Text Available AbstractThe ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise and decay time measurements were also measured.

  5. Studies of optical emission in the high intensity pumping regime of top-down ZnO nanostructures and thin films grown on c-sapphire substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Divay, L.; Kostcheev, S.; McMurtry, S.; Lerondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, ICD CNRS (FRE2848), Universite de Technologie de Troyes, Troyes (France); Rogers, D.J.; Teherani, F.H. [Nanovation SARL, Versailles, 91400 Orsay (France); Lusson, A. [GEMaC, CNRS - Universite de Versailles Saint-Quentin en Yvelines,Meudon (France)

    2008-07-01

    We report on the emission of Zinc Oxide (ZnO) thin films obtained by Pulsed Laser Deposition (PLD) under high intensity excitation. In order to clarify the origin of the emission bands, we compared results for high quality thin films (75 nm) before and after 'top-down' nanopatterning. A nanopattering technique was developed for this purpose. The technique combined Electron Beam Lithography (EBL) and lift-off techniques and Inductively Coupled Plasma Reactive Ion Etching (ICP RIE). The emission spectra of the two types of samples were found to have a difference in their fine structure that was attributed, in part, to the existence of guided emission in the thin films and exciton weak confinement effects in the nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  7. Anodized ZnO nanostructures for photoelectrochemical water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2016-01-01

    Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

  8. Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment

    Science.gov (United States)

    Li, Yaping; Wang, Hui-Qiong; Chu, Tian-Jian; Li, Yu-Chiuan; Li, Xiaojun; Liao, Xiaxia; Wang, Xiaodan; Zhou, Hua; Kang, Junyong; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zheng, Jin-Cheng

    2018-05-01

    Treatment of ZnO films in a supercritical fluid (SCF) has been reported to improve the performance of devices in which the treated ZnO films are incorporated; however, the mechanism of this improvement remains unclear. In this paper, we study the transformation of the surface morphologies and emission properties of ZnO films before and after SCF treatment, establishing the relationship between the treated and untreated structures and thereby enabling tuning of the catalytic or opto-electronic performance of ZnO films or ZnO-film-based devices. Both undoped and N-doped ZnO nanostructures generated by SCF treatment of films are investigated using techniques to characterize their surface morphology (scanning electron microscopy (SEM) and atomic force microscopy (AFM)) as well as room-temperature photoluminescence (RT-PL) spectroscopy. The water-mixed supercritical CO2 (W-SCCO2) technology was found to form nanostructures in ZnO films through a self-catalyzed process enabled by the Zn-rich conditions in the ZnO films. The W-SCCO2 was also found to promote the inhibition of defect luminescence by introducing -OH groups onto the films. Two models are proposed to explain the effects of the treatment with W-SCCO2. This work demonstrates that the W-SCCO2 technology can be used as an effective tool for the nanodesign and property enhancement of functional metal oxides.

  9. Growth of hybrid carbon nanostructures on iron-decorated ZnO nanorods

    Science.gov (United States)

    Mbuyisa, Puleng N.; Rigoni, Federica; Sangaletti, Luigi; Ponzoni, Stefano; Pagliara, Stefania; Goldoni, Andrea; Ndwandwe, Muzi; Cepek, Cinzia

    2016-04-01

    A novel carbon-based nanostructured material, which includes carbon nanotubes (CNTs), porous carbon, nanostructured ZnO and Fe nanoparticles, has been synthetized using catalytic chemical vapour deposition (CVD) of acetylene on vertically aligned ZnO nanorods (NRs). The deposition of Fe before the CVD process induces the presence of dense CNTs in addition to the variety of nanostructures already observed on the process done on the bare NRs, which range from amorphous graphitic carbon up to nanostructured dendritic carbon films, where the NRs are partially or completely etched. The combination of scanning electron microscopy and in situ photoemission spectroscopy indicate that Fe enhances the ZnO etching, and that the CNT synthesis is favoured by the reduced Fe mobility due to the strong interaction between Fe and the NRs, and to the presence of many defects, formed during the CVD process. Our results demonstrate that the resulting new hybrid shows a higher sensitivity to ammonia gas at ambient conditions (∼60 ppb) than the carbon nanostructures obtained without the aid of Fe, the bare ZnO NRs, or other one-dimensional carbon nanostructures, making this system of potential interest for environmental ammonia monitoring. Finally, in view of the possible application in nanoscale optoelectronics, the photoexcited carrier behaviour in these hybrid systems has been characterized by time-resolved reflectivity measurements.

  10. High Performance Flexible Actuator of Urchin-Like ZnO Nanostructure/Polyvinylenefluoride Hybrid Thin Film with Graphene Electrodes for Acoustic Generator and Analyzer.

    Science.gov (United States)

    Cheong, Oug Jae; Lee, James S; Kim, Jae Hyun; Jang, Jyongsik

    2016-05-01

    A bass frequency response enhanced flexible polyvinylidene fluoride (PVDF) based thin film acoustic actuator is successfully fabricated. High concentrations of various zinc oxide (ZnO) is embedded in PVDF matrix, enhancing the β phase content and the dielectric property of the composite thin film. ZnO acts as a nucleation agent for the crystallization of PVDF. A chemical vapor deposition grown graphene is used as electrodes, enabling high electron mobility for the distortion free acoustic signals. The frequency response of the fabricated acoustic actuator is studied as a function of the film thickness and filler content. The optimized film has a thickness of 80 μm with 30 wt% filler content and shows 72% and 42% frequency response enhancement in bass and midrange compared to the commercial PVDF, respectively. Also, the total harmonic distortion decreases to 82% and 74% in the bass and midrange regions, respectively. Furthermore, the composite film shows a promising potential for microphone applications. Most of all, it is demonstrated that acoustic actuator performance is strongly influenced by degree of PVDF crystalline. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. A flexible UV nanosensor based on reduced graphene oxide decorated ZnO nanostructures

    Science.gov (United States)

    Wang, Zhenxing; Zhan, Xueying; Wang, Yajun; Muhammad, Safdar; Huang, Ying; He, Jun

    2012-03-01

    A low-cost, compatible with flexible electronics, high performance UV sensor has been achieved from a reduced graphene oxide (RGO) decorated hydrangea-like ZnO film on a PDMS substrate. The hydrangea-like ZnO UV sensor has the best UV sensing performance among devices made of three kinds of ZnO nanostructures synthesized by a hydrothermal method, and demonstrated a dramatic enhancement in on/off ratio and photoresponse current by introducing an appropriate weight ratio of RGO. The on/off ratio of the 0.05% RGO/ZnO sensor increases almost one order of magnitude compared to that of a pristine hydrangea-like ZnO UV sensor. While for the 5% RGO decorated ZnO sensor, the photoresponse current reaches as high as ~1 μA and exceeds 700 times that of a ZnO UV sensor. These results indicate that RGO is an appropriate material to enhance the performance of ZnO nanostructure UV sensors based on its unique features, especially the high optical transparency and excellent electronic conductivity. Our findings will make RGO/ZnO nanohybrids extraordinarily promising in optoelectronics, flexible electronics and sensor applications.

  12. Detectors based on Pd-doped and PdO-functionalized ZnO nanostructures

    Science.gov (United States)

    Postica, V.; Lupan, O.; Ababii, N.; Hoppe, M.; Adelung, R.; Chow, L.; Sontea, V.; Aschehoug, P.; Viana, V.; Pauporté, Th.

    2018-02-01

    In this work, zinc oxide (ZnO) nanostructured films were grown using a simple synthesis from chemical solutions (SCS) approach from aqueous baths at relatively low temperatures (room temperature (gas response of 2). Up to 200 °C operating temperature the samples are highly selective to H2 gas, with highest response of 12 at 150 °C. This study demonstrates that surface functionalization of n-ZnO nanostructured films with p-type oxides is very important for improvement of gas sensing properties.

  13. Double-layered ZnO nanostructures for efficient perovskite solar cells

    KAUST Repository

    Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

    2014-01-01

    To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

  14. ZnO Nanostructures for Tissue Engineering Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2017-11-01

    Full Text Available This review focuses on the most recent applications of zinc oxide (ZnO nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair.

  15. Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ngom, B.D. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa)], E-mail: bdngom@tlabs.ac.za; Mpahane, T. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Manyala, N. [Department of Physics and Electronics National University of Lesotho (Lesotho); Nemraoui, O. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Buttner, U. [Engineering Department, University of Stellenbosch (South Africa); Kana, J.B. [Department of Physique University of Yaounde 1 (Cameroon); Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Maaza, M. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Beye, A.C. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal)

    2009-01-15

    Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm{sup -2}, respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.

  16. A highly selective and wide range ammonia sensor—Nanostructured ZnO:Co thin film

    International Nuclear Information System (INIS)

    Mani, Ganesh Kumar; Rayappan, John Bosco Balaguru

    2015-01-01

    Graphical abstract: - Highlights: • Cobalt doped nanostructured ZnO thin films were spray deposited on glass substrates. • Co-doped ZnO film was highly selective towards ammonia than ethanol, methanol, etc. • The range of ammonia detection was improved significantly by doping cobalt in ZnO. - Abstract: Ammonia sensing characteristics of undoped and cobalt (Co)-doped nanostructured ZnO thin films were investigated. Polycrystalline nature with hexagonal wurtzite structure and high crystalline quality with dominant (0 0 2) plane orientation of Co-doped ZnO film were confirmed by the X-ray diffractogram. Scanning electron micrographs of the undoped film demonstrated the uniform deposition of sphere-shaped grains. But, smaller particles with no clear grain boundaries were observed for Co-doped ZnO thin film. Band gap values were found to be 3.26 eV and 3.22 eV for undoped and Co-doped ZnO thin films. Ammonia sensing characteristics of Co-doped ZnO film at room temperature were investigated in the concentration range of 15–1000 ppm. Variation in the sensing performances of Co-doped and pure ZnO thin films has been analyzed and compared

  17. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    Science.gov (United States)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

  18. Sensing performances of ZnO nanostructures grown under different oxygen pressures to hydrogen

    International Nuclear Information System (INIS)

    Chu, Jin; Peng, Xiaoyan; Wang, Zhenbo; Feng, Peter

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► Surface morphology depends on the oxygen pressure. ► Structural degradation was observed for the ZnO samples when oxygen pressure was overhigh. ► The sensitivity of the ZnO-based sensors increase with grown oxygen pressure. -- Abstract: For extensive use in an industrialized process of individual ZnO nanostructures applied in gas sensors, a simple, inexpensive, and safe synthesis process is required. Here, nanostructured ZnO films were grown by a pulsed laser deposition technique under different oxygen pressures. Scanning electron microscopy images show nanopores, nanotips, and nanoparticles are obtained and energy dispersive X-ray spectroscopy data indicate oxygen concentration of the synthesized samples increases monotonously with oxygen pressure. The sensor based on ZnO with high oxygen concentration has high sensitivity, rapid response (9 s) and recovery (80 s) behavior to 500 ppm hydrogen below 150 °C. Experimental data indicate that high oxygen concentration effectively improves the sensing properties of nanostructured ZnO.

  19. Piezoelectric ZnO nanostructure for energy harvesting

    CERN Document Server

    Leprince-Wang, Yamin

    2015-01-01

    Over the past decade, ZnO as an important II-VI semiconductor has attracted much attention within the scientific community over the world owing to its numerous unique and prosperous properties. This material, considered as a "future material", especially in nanostructural format, has aroused many interesting research works due to its large range of applications in electronics, photonics, acoustics, energy and sensing. The bio-compatibility, piezoelectricity & low cost fabrication make ZnO nanostructure a very promising material for energy harvesting.

  20. Optical function of bionic nanostructure of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Xu, C X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Zhu, G P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, Y J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore); Sun, X W [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Li, X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, J P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Cui, Y P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2007-10-15

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction.

  1. Optical function of bionic nanostructure of ZnO

    International Nuclear Information System (INIS)

    Xu, C X; Zhu, G P; Liu, Y J; Sun, X W; Li, X; Liu, J P; Cui, Y P

    2007-01-01

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction

  2. Oriented ZnO nanostructures and their application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Man, Minh Tan [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of); Kim, Ji-Hee [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Sungkyunkwan University (SKKU), Suwon, 16419 (Korea, Republic of); Jeong, Mun Seok [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 16419 (Korea, Republic of); Do, Anh-Thu Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Caugiay, Hanoi (Viet Nam); Lee, Hong Seok, E-mail: hslee1@jbnu.ac.kr [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of)

    2017-05-15

    We report a chemical bath deposition approach for the preparation of large arrays of oriented ZnO nanostructures by activated substrate processes, and precipitated ZnO nanorods by passive occupation of the crystal surface. Photoluminescence dynamics showed that various visible emission characteristics associated with defects such as oxygen vacancy, zinc interstitial or their complexes. In addition, the precipitated ZnO nanorods exhibited excellent performance in the adsorption and photocatalytic decomposition of organic dyes, achieving 95% photodegradation of Rhodamine 6B. Moreover, oxygen defects function as trap sites with strong adsorption abilities towards organic dyes and showed high performance in the photocatalytic degradation of the dye molecules.

  3. Solution precursor plasma deposition of nanostructured ZnO coatings

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2011-01-01

    Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  4. Solution precursor plasma deposition of nanostructured ZnO coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

    2011-08-15

    Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  5. Superhydrophobic multi-scale ZnO nanostructures fabricated by chemical vapor deposition method.

    Science.gov (United States)

    Zhou, Ming; Feng, Chengheng; Wu, Chunxia; Ma, Weiwei; Cai, Lan

    2009-07-01

    The ZnO nanostructures were synthesized on Si(100) substrates by chemical vapor deposition (CVD) method. Different Morphologies of ZnO nanostructures, such as nanoparticle film, micro-pillar and micro-nano multi-structure, were obtained with different conditions. The results of XRD and TEM showed the good quality of ZnO crystal growth. Selected area electron diffraction analysis indicates the individual nano-wire is single crystal. The wettability of ZnO was studied by contact angle admeasuring apparatus. We found that the wettability can be changed from hydrophobic to super-hydrophobic when the structure changed from smooth particle film to single micro-pillar, nano-wire and micro-nano multi-scale structure. Compared with the particle film with contact angle (CA) of 90.7 degrees, the CA of single scale microstructure and sparse micro-nano multi-scale structure is 130-140 degrees, 140-150 degrees respectively. But when the surface is dense micro-nano multi-scale structure such as nano-lawn, the CA can reach to 168.2 degrees . The results indicate that microstructure of surface is very important to the surface wettability. The wettability on the micro-nano multi-structure is better than single-scale structure, and that of dense micro-nano multi-structure is better than sparse multi-structure.

  6. pH effect on structural and optical properties of nanostructured zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Munef, R. A. [Kirkuk Iraq, Kirkuk university, college of science physics department, phone: 009647702180337, Iraq Rafeamonef@yahoo.com (Iraq)

    2015-03-30

    ZnO nanostructures were Deposited on Objekttrager glasses for various pH values by chemical bath deposition method using Zn (NO3)2·6H2O (zinc nitrate hexahydrate) solution at 75°C reaction temperature without any posterior treatments. The ZnO nanostructures obtained were characterized by X-ray Diffraction (XRD, UV). The structure was hexagonal and it was found that some peaks disappear with various pH values. The grain sizes of ZnO films increases from 22-to-29nm with increasing pH. The transmission of the films was (85-95%)

  7. Effect of co-doping process on topography, optical and electrical properties of ZnO nanostructured

    Science.gov (United States)

    Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Syamsir, S. A.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    We investigated of Undoped ZnO and Magnesium (Mg)-Aluminium (Al) co-doped Zinc Oxide (MAZO) nanostructured films were prepared by sol gel spin coating technique. The surface topography was analyzed using Atomic Force Microscopy (AFM). Based on the AFM results, Root Mean Square (RMS) of MAZO films have rougher surface compared to pure ZnO films. The optical and electrical properties of thin film samples were characterized using Uv-Vis spectroscopy and two point probes, current-voltage (I-V) measurements. The transmittance spectra for both thin samples was above 80% in the visible wavelength. The MAZO film shows the highest conductivity compared to pure ZnO films. This result indicates that the improvement of carrier mobility throughout doping process and possibly contribute by extra ion charge.

  8. Fabrication of ZnO Nanostructures with Self-cleaning Functionality

    International Nuclear Information System (INIS)

    Kok, K.Y.; Ng, I.K.; Nur Ubaidah Saidin; Bustaman, F.K.A.

    2011-01-01

    The science of biomimicry has served as a fusion point between nature and technology where one could adopt natures best solution for humans use. Lotus leaf surface, for example, possesses self cleaning capability due to its unique physical and chemical properties. In this work, we aimed to mimic these features on glass surface using ZnO nanostructures to achieve the self-cleaning functionality. A series of ZnO films were electrochemically deposited on indium-doped tin oxide (ITO) conducting glasses from different aqueous electrolytes at systematically varied deposition potentials and electrolyte conditions. The surface morphology, density, orientation and aspect ratio of the ZnO micro/nanostructures obtained were characterized using X-ray diffraction and scanning electron microscopy. Results from these studies show that lower electrolyte concentrations tend to favor one-dimensional growth of ZnO nanostructures that self-assembled into nano flowers at higher deposition temperatures. This hierarchical micro/nano-structured ZnO-modified surface exhibits super hydrophobicity with water contact angle as high as 170 degree. (author)

  9. Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

    Science.gov (United States)

    Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

    2013-03-01

    In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

  10. Hydrothermal temperature effect on crystal structures, optical properties and electrical conductivity of ZnO nanostructures

    Science.gov (United States)

    Dhafina, Wan Almaz; Salleh, Hasiah; Daud, Mohd Zalani; Ghazali, Mohd Sabri Mohd; Ghazali, Salmah Mohd

    2017-09-01

    ZnO is an wide direct band gap semiconductor and possess rich family of nanostructures which turned to be a key role in the nanotechnology field of applications. Hydrothermal method was proven to be simple, robust and low cost among the reported methods to synthesize ZnO nanostructures. In this work, the properties of ZnO nanostructures were altered by varying temperatures of hydrothermal process. The changes in term of morphological, crystal structures, optical properties and electrical conductivity were investigated. A drastic change of ZnO nanostructures morphology and decreases of 002 diffraction peak were observed as the hydrothermal temperature increased. The band gap of samples decreased as the size of ZnO nanostructure increased, whereas the electrical conductivity had no influence on the band gap value but more on the morphology of ZnO nanostructures instead.

  11. Wettability control of micropore-array films by altering the surface nanostructures.

    Science.gov (United States)

    Chang, Chi-Jung; Hung, Shao-Tsu

    2010-07-01

    By controlling the surface nanostructure, the wettability of films with similar pore-array microstructure can be tuned from hydrophilic to nearly superhydrophobic without variation of the chemical composition. PA1 pore-array film consisting of the horizontal ZnO nanosheets was nearly superhydrophobic. PA2 pore-array film consisting of growth-hindered vertically-aligned ZnO nanorods was hydrophilic. The influences of the nanostructure shape, orientation and the micropore size on the contact angle of the PA1 films were studied. This study provides a new approach to control the wettability of films with similar pore-array structure at the micro-scale by changing their surface nanostructure. PA1 films exhibited irradiation induced reversible wettability transition. The feasibility of creating a wetted radial pattern by selective UV irradiation of PA1 film through a mask with radial pattern and water vapor condensation was also evaluated.

  12. Morphological transition of ZnO nanostructures influenced by magnesium doping

    International Nuclear Information System (INIS)

    Premkumar, T.; Zhou, Y.S.; Gao, Y.; Baskar, K.; Jiang, L.; Lu, Y.F.

    2012-01-01

    Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E 2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.

  13. Random laser action in 3-D ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Miao, L.; Tanemura, S. [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, No. 2 Nengyuan Rd. Tianhe district, Guangzhou (China); Materials R and D Laboratory, Japan Fine Ceramics Centre, Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan); Yang, H.Y.; Lau, S.P. [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore); Xu, G. [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, No. 2 Nengyuan Rd. Tianhe district, Guangzhou (China)

    2009-05-15

    Room-temperature ultraviolet random lasing with low threshold pumping power was successfully achieved by ZnO 3-D random-wall nanostructure fabricated on ZnO/SiO{sub 2}/Si substrate through a thermal chemical reaction and vapor transportation deposition method in a simple horizontal tube furnace from the mixed ZnO and graphite powders. The nanorods grown along c-axis on the substrate are coalesced to form the 3-D nano-wall with 80{proportional_to}100 nm in wall thickness and irregular height ranging of 95-250 nm. Mueller matrix spectroscopic ellipsometry reveals that evaluated refractive indices n(E) of ZnO nanowalls are well interpreted by taking account of the ratio between ZnO and void achieved by effective medium theory analysis and isotropic depolarization feature of the designated nanowalls. Random lasing action observed in the wide wavelength range between 375 and 395 nm is realized by coherent amplification of the closed-loop scattered light inside 3-D random-wall nanostructure. It is demonstrated that both transverse electric (TE) and transverse magnetic (TM) modes show the same threshold and pumping power dependent trend, while the intensity of TM lasing is weaker than that of TE due to the different scattering strength originated from the features of the inside of nanowall. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. GaN and ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Fuendling, Soenke; Soekmen, Uensal; Behrends, Arne; Al-Suleiman, Mohamed Aid Mansur; Merzsch, Stephan; Li, Shunfeng; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, Technische Universitaet Braunschweig, Braunschweig (Germany); Laehnemann, Jonas; Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-10-15

    GaN and ZnO are both wide band gap semiconductors with interesting properties concerning optoelectronic and sensor device applications. Due to the lack or the high costs of native substrates, alternatives like sapphire, silicon, or silicon carbide are taken, but the resulting lattice and thermal mismatches lead to increased defect densities which reduce the material quality. In contrast, nanostructures with high aspect ratio have lower defect densities as compared to layers. In this work, we give an overview on our results achieved on both ZnO as well as GaN based nanorods. ZnO nanostructures were grown by a wet chemical approach as well as by VPT on different substrates - even on flexible polymers. To compare the growth results we analyzed the structures by XRD and PL and show possible device applications. The GaN nano- and microstructures were grown by metal organic vapor phase epitaxy either in a self-organized process or by selective area growth for a better control of shape and material composition. Finally we take a look onto possible device applications, presenting our attempts, e.g., to build LEDs based on GaN nanostructures. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Mechanisms of electron transport and recombination in ZnO nanostructures for dye-sensitized solar cells.

    Science.gov (United States)

    Vega-Poot, Alberto G; Macías-Montero, Manuel; Idígoras, Jesus; Borrás, Ana; Barranco, Angel; Gonzalez-Elipe, Agustín R; Lizama-Tzec, Francisco I; Oskam, Gerko; Anta, Juan A

    2014-04-14

    ZnO is an attractive material for applications in dye-sensitized solar cells and related devices. This material has excellent electron-transport properties in the bulk but its electron diffusion coefficient is much smaller in mesoporous films. In this work the electron-transport properties of two different kinds of dye-sensitized ZnO nanostructures are investigated by small-perturbation electrochemical techniques. For nanoparticulate ZnO photoanodes prepared via a wet-chemistry technique, the diffusion coefficient is found to reproduce the typical behavior predicted by the multiple-trapping and the hopping models, with an exponential increase with respect to the applied bias. In contrast, in ZnO nanostructured thin films of controlled texture and crystallinity prepared via a plasma chemical vapor deposition method, the diffusion coefficient is found to be independent of the electrochemical bias. This observation suggests a different transport mechanism not controlled by trapping and electron accumulation. In spite of the quite different transport features, the recombination kinetics, the electron-collection efficiency and the photoconversion efficiency are very similar for both kinds of photoanodes, an observation that indicates that surface properties rather than electron transport is the main efficiency-determining factor in solar cells based on ZnO nanostructured photoanodes. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  17. Studies of surface morphology and optical properties of ZnO nanostructures grown on different molarities of TiO_2 seed layer

    International Nuclear Information System (INIS)

    Asib, N. A. M.; Afaah, A. N.; Aadila, A.; Khusaimi, Z.; Rusop, M.

    2016-01-01

    Titanium dioxide (TiO_2) seed layer was prepared by using sol-gel spin-coating technique, followed by growth of 0.01 M of Zinc oxide (ZnO) nanostructures by solution-immersion. The molarities of TiO_2 seed layer were varied from 1.1 M to 0.100 M on glass substrates. The nanostructures thin films were characterized by Field Emission Scanning Electrons Microscope (FESEM), Photoluminescence (PL) spectroscopy and Ultraviolet-Visible (UV-Vis) spectroscopy. FESEM images demonstrate that needle-like ZnO nanostructures are formed on all TiO_2 seed layer. The smallest diameter of needle-like ZnO nanostructures (90.3 nm) were deposited on TiO_2 seed layer of 0.100 M. PL spectra of the TiO_2: ZnO nanostructures thin films show the blue shifted emissions in the UV regions compared to the ZnO thin film. Meanwhile, UV-vis spectra of films display high absorption in the UV region and high trasparency in the visible region. The highest absorbance at UV region was recorded for sample which has 0.100 M of TiO_2 seed layer.

  18. Facile synthesis of one dimensional ZnO nanostructures for DSSC applications

    International Nuclear Information System (INIS)

    Marimuthu, T.; Anandhan, N.

    2016-01-01

    Development of zinc oxide (ZnO) nanostructure based third generation dye sensitized solar cell is interesting compared to conventional silicon solar cells. ZnO nanostructured thin films were electrochemically deposited onto fluorine doped tin oxide (FTO) glass substrate. The effect of ethylene-diamine-tetra-acetic acid (EDTA) on structural, morphological and optical properties is investigated using X-ray diffraction (XRD) meter, field emission scanning electron microscope (FE-SEM) and micro Raman spectroscopy. XRD patterns reveal that the prepared nanostructures are hexagonal wutrzite structures with (101) plane orientation, the nanostructure prepared using EDTA exhibits better crystallinity. FE-SEM images illustrate that the morphological changes are observed from nanorod structure to cauliflower like structure as EDTA is added. Micro Raman spectra predict that cauliflower like structure possesses a higher crystalline nature with less atomic defects compared to nanorod structures. Dye sensitized solar cell (DSSC) is constructed for the optimized cauliflower structure, and open circuit voltage, short circuit density, fill factor and efficiency are estimated from the J-V curve.

  19. Facile synthesis of one dimensional ZnO nanostructures for DSSC applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com [Advanced Materials and Thin Film Physics Lab, School of Physics, Alagappa University, Karaikudi – 630 003, India. (India)

    2016-05-06

    Development of zinc oxide (ZnO) nanostructure based third generation dye sensitized solar cell is interesting compared to conventional silicon solar cells. ZnO nanostructured thin films were electrochemically deposited onto fluorine doped tin oxide (FTO) glass substrate. The effect of ethylene-diamine-tetra-acetic acid (EDTA) on structural, morphological and optical properties is investigated using X-ray diffraction (XRD) meter, field emission scanning electron microscope (FE-SEM) and micro Raman spectroscopy. XRD patterns reveal that the prepared nanostructures are hexagonal wutrzite structures with (101) plane orientation, the nanostructure prepared using EDTA exhibits better crystallinity. FE-SEM images illustrate that the morphological changes are observed from nanorod structure to cauliflower like structure as EDTA is added. Micro Raman spectra predict that cauliflower like structure possesses a higher crystalline nature with less atomic defects compared to nanorod structures. Dye sensitized solar cell (DSSC) is constructed for the optimized cauliflower structure, and open circuit voltage, short circuit density, fill factor and efficiency are estimated from the J-V curve.

  20. A study on the sensing of NO(sub2) and O(sub2) utilizing ZnO films grown by aerosol spray pyrolysis

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2015-07-01

    Full Text Available The present paper addresses the preparation and characterization of ZnO nanostructured thin films obtained using aerosol spray pyrolysis method at different deposition periods. Aiming at understanding the chemical composition, structural...

  1. Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

    Directory of Open Access Journals (Sweden)

    Haridas D. Dhaygude

    2016-03-01

    Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

  2. Admittance spectroscopy of spray-pyrolyzed ZnO film

    International Nuclear Information System (INIS)

    Kavasoglu, Nese; Kavasoglu, A. Sertap

    2008-01-01

    A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior from grains, grain boundaries, and electrodes of film. Proper equivalent electrical circuit of a ZnO film composed of a single parallel resistor, capacitor, and inductor network connected with a series resistance was proposed. Moreover, we displayed metal-semiconductor transition (MST) in the ZnO film via admittance spectroscopy

  3. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    Science.gov (United States)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  4. Hydrothermal growth and characterizations of dandelion-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, The Institute of Science, Madam Cama Road, Mumbai 400 032, (M.S.) (India); Lu, Shih-Yuan, E-mail: sylu@nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, ROC (China)

    2013-12-05

    Highlights: •The simple, low cost, environmental benign hydrothermal method has been used to synthesize ZnO nanostructure. •The SEM images reveal the interesting 3D dandelion-like morphology of synthesized ZnO nanostructure. The SAED pattern and HRTEM study confirms that the ZnO nanorods are single crystalline. •Change in experimental conditions dramatically changes the morphologies of the synthesized ZnO. •The room temperature PL study reveals strong band edge emission along with much weaker defect related blue emission. •The reaction and growth mechanism of ZnO nanostructure is also discussed. -- Abstract: Three dimensional (3D) ZnO nanostructures have been synthesized by using a facile low-cost hydrothermal method under mild conditions. Aqueous alkaline ammonia solution of Zn(CH{sub 3}COO){sub 2} is used to grow 3D ZnO nanostructures. The X-ray diffraction (XRD) study reveals the well crystallized hexagonal structure of ZnO. SEM observations depict that the ZnO product grows in the form of nanorods united together to form 3D dandelion-like nanostructures. The elemental analysis using EDAX technique confirms the stoichiometry of the ZnO nanorods. The product exhibits special optical properties with red-shifts in optical absorption peak (376 nm) as compared with those of conventional ZnO nanorods. PL spectra show emission peak (396 nm) at the near band-edge and peak (464 nm) originated from defects states that are produced during the hydrothermal growth. TEM and SAED results reveal single crystalline structure of the synthesized product. The reaction and growth mechanisms on the morphological evolution of the ZnO nanostructures are discussed. The morphology of ZnO product is investigated by varying the reaction time, temperature, and type of complexing reagent.

  5. Study of quantum confinement effects in ZnO nanostructures

    Science.gov (United States)

    Movlarooy, Tayebeh

    2018-03-01

    Motivation to fact that zinc oxide nanowires and nanotubes with successful synthesis and the mechanism of formation, stability and electronic properties have been investigated; in this study the structural, electronic properties and quantum confinement effects of zinc oxide nanotubes and nanowires with different diameters are discussed. The calculations within density functional theory and the pseudo potential approximation are done. The electronic structure and energy gap for Armchair and zigzag ZnO nanotubes with a diameter of about 4 to 55 Angstrom and ZnO nanowires with a diameter range of 4 to 23 Å is calculated. The results revealed that due to the quantum confinement effects, by reducing the diameter of nanowires and nanotubes, the energy gap increases. Zinc oxide semiconductor nanostructures since having direct band gap with size-dependent and quantum confinement effect are recommended as an appropriate candidate for making nanoscale optoelectronic devices.

  6. ZnO synthesized in air by fs laser irradiation on metallic Zn thin films

    Science.gov (United States)

    Esqueda-Barrón, Y.; Herrera, M.; Camacho-López, S.

    2018-05-01

    We present results on rapid femtosecond laser synthesis of nanostructured ZnO. We used metallic Zn thin films to laser scan along straight tracks, until forming nanostructured ZnO. The synthesis dependence on laser irradiation parameters such as the per pulse fluence, integrated fluence, laser scan speed, and number of scans were explored carefully. SEM characterization showed that the morphology of the obtained ZnO is dictated by the integrated fluence and the laser scan speed; micro Raman and XRD results allowed to identify optimal laser processing conditions for getting good quality ZnO; and cathodoluminescence measurements demonstrated that a single laser scan at high per pulse laser fluence, but a medium integrated laser fluence and a medium laser scan speed favors a low density of point-defects in the lattice. Electrical measurements showed a correlation between resistivity of the laser produced ZnO and point-defects created during the synthesis. Transmittance measurements showed that, the synthesized ZnO can reach down to the supporting fused silica substrate under the right laser irradiation conditions. The physical mechanism for the formation of ZnO, under ultrashort pulse laser irradiation, is discussed in view of the distinct times scales given by the laser pulse duration and the laser pulse repetition rate.

  7. Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

    Science.gov (United States)

    He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

    2017-06-01

    In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

  8. ZnO nanostructures induced by microwave plasma

    Directory of Open Access Journals (Sweden)

    Khaled A. Elsayed

    2015-07-01

    Full Text Available Microwave induced hydrogen plasma is used to fabricate ZnO thin films at low ambient gas pressure and controlled oxygen content in the gas mixture. The emission spectra have been observed. Optical emission spectroscopy was used to identify the chemical reaction mechanism. Structural quality of the so-obtained nanoparticles was studied by X-ray diffraction (XRD and high resolution scanning electron microscopy (SEM. SEM results showed that nanorods were formed in the process, and XRD results along with nanorod dimensions obtained from SEM are consistent with the formation of single and poly-crystalline ZnO nanorods. The alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the glass substrate. The minimum crystallite grain size as obtained from the SEM measurements was ∼24 nm and the average diameter is 70 nm with a length of 1–2 μm. The deposited ZnO thin films have a wide energy band gap that equals ∼3 eV.

  9. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  10. Easy Formation of Nanodisk-Dendritic ZnO Film via Controlled Electrodeposition Process

    Directory of Open Access Journals (Sweden)

    Nur Azimah Abd Samad

    2015-01-01

    Full Text Available A facile electrodeposition synthesis was introduced to prepare the nanodisk-dendritic ZnO film using a mixture solution of zinc chloride (ZnCl2 with potassium chloride (KCl that acted as a directing agent. This study aims to determine the best photoelectrochemical response for solar-induced water splitting. Based on our results obtained, it was found that an average diagonal of nanodisk was approximately 1.70 µm with the thickness of ≈150 nm that was successfully grown on the surface of substrate. The photocatalytic and photoelectrochemical responses of the resultant wurtzite type based-nanodisk-dendrite ZnO film as compared to the as-prepared ZnO film were monitored and evaluated. A photocurrent density of 19.87 mA/cm2 under ultraviolet rays and 14.05 mA/cm2 under visible light (500 nm was recorded for the newly developed nanodisk-dendritic ZnO thin film. It was believed that nanodisk-dendritic ZnO film can harvest more incident photons from the illumination to generate more photoinduced charge carriers to trigger the photocatalytic and photoelectrochemical reactions. Moreover, strong light scattering effects and high specific surface area of 2D nanostructures aid in the incident light absorption from any direction.

  11. Optical and structural properties of nanostructured ZnO thin films deposited onto FTO/glass substrate by a solution-based technique

    CSIR Research Space (South Africa)

    Berruet, M

    2013-10-01

    Full Text Available . Vazquez a, R.E. Marotti b a División Electroquímica y Corrosión, INTEMA, Facultad de Ingeniería, CONICET- Universidad Nacional de Mar del Plata, J.B. Justo 4302, B7608FDQ Mar del Plata, Argentina b Instituto de Física and CINQUIFIMA, Facultad de... Ingeniería, Universidad de la República, Herrera y Reissig 565, C.C. 30, 11000 Montevideo, Uruguay c National Centre for Nano-Structured Materials, Council for Scientific and Industrial Research, 1-Meiring Naude Road, Brummeria, P.O. Box 395, Pretoria...

  12. Blue-emitting photoluminescence of rod-like and needle-like ZnO nanostructures formed by hot-water treatment of sol–gel derived coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Wai Kian, E-mail: tanwaikian@cie.ignite.tut.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Kawamura, Go; Muto, Hiroyuki [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Abdul Razak, Khairunisak; Lockman, Zainovia [School of Materials and Mineral Resources, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Pulau Pinang 14300 Malaysia (Malaysia); Matsuda, Atsunori, E-mail: matsuda@tut.ee.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan)

    2015-02-15

    The morphological evolution of the zinc oxide (ZnO) nanostructures generated by hot-water treatment (HWT) of sol–gel derived coatings as a function of temperature from 30 to 90 °C was investigated. With increasing HWT temperature, the ZnO crystals evolved from nanoparticles to rod-like and needle-like nanostructures. High-resolution transmission electron microscope observations of rod-like and needle-like nanostructures generated at 60 and 90 °C indicated single crystal ZnO wurtzite structure was obtained. All the hot-water treated samples exhibited blue emission at approximately 440 nm in room temperature. The intensity of blue emission increased with higher HWT temperatures. The unique photoluminescence emission characteristic remained even after heat-treatment at 400 °C for 1 h. As the emission peak obtained in our work is approximately 440 nm (2.82 eV), the emission peak is corresponding to the electron transition from the interstitial Zn to the top of valence band. This facile formation of blue-emitting ZnO nanostructures at low-temperature can be utilized on substrate with low thermal stability for optoelectronic applications such as light emitting devices and biological fluorescence labeling. - Highlights: • Facile and novel formation of ZnO nanostructures by low temperature hot-water treatment. • No catalyst or inhibitor is used. • Evolution of ZnO nanostructures formation as a function of temperature is reported. • Dominant blue emissions are observed from the as-formed and annealed ZnO films. • Ultraviolet and visible emissions are observed for hot-water treated films.

  13. Effect of Er3+ doping on structural, morphological and photocatalytical properties of ZnO thin films

    Science.gov (United States)

    Bouhouche, S.; Bensouici, F.; Toubane, M.; Azizi, A.; Otmani, A.; Chebout, K.; Kezzoula, F.; Tala-Ighil, R.; Bououdina, M.

    2018-05-01

    In this research work, structure, microstructure, optical and photocatalytic properties of undoped and Erbium doped nanostructured ZnO thin films prepared by sol-gel dip-coating are investigated. X-ray diffraction (XRD) analysis indicates that the deposited films crystallize within the hexagonal wurtzite-type structure with a preferential growth orientation along (002) plane. Morphological observations using scanning electron microscopy (SEM) reveal important influence of Er concentration; displaying homogeneous and dense aspect for undoped to 0.3% then grid-like morphology for 0.4 and 0.5%. UV/vis/NIR transmittance spectroscopy spectra display a transmittance over 70%, and small variation in the energy gap energy 3.263–3.278 eV. Wettability test of ZnO thin films surface ranges from hydrophilic aspect for pure ZnO to hydrophobic one for Er doped ZnO, and the contact angle is found to increase from 58.7° for pure ZnO up to 98.4° for 0.4% Er doped ZnO. The photocatalytic activity measurements evaluated using the degradation of methylene blue (MB) under UV light irradiation demonstrate that undoped ZnO film shows higher photocatalytic activity compared to Er doped ZnO films, which may be attributed to the deterioration of films’crystallinity resulting in lower transmittance.

  14. Hybrid nanostructure heterojunction solar cells fabricated using vertically aligned ZnO nanotubes grown on reduced graphene oxide.

    Science.gov (United States)

    Yang, Kaikun; Xu, Congkang; Huang, Liwei; Zou, Lianfeng; Wang, Howard

    2011-10-07

    Using reduced graphene oxide (rGO) films as the transparent conductive coating, inorganic/organic hybrid nanostructure heterojunction photovoltaic devices have been fabricated through hydrothermal synthesis of vertically aligned ZnO nanorods (ZnO-NRs) and nanotubes (ZnO-NTs) on rGO films followed by the spin casting of a poly(3-hexylthiophene) (P3HT) film. The data show that larger interfacial area in ZnO-NT/P3HT composites improves the exciton dissociation and the higher electrode conductance of rGO films helps the power output. This study offers an alternative to manufacturing nanostructure heterojunction solar cells at low temperatures using potentially low cost materials.

  15. Template-free sonochemical synthesis of flower-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Huawa [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); School of Science, Xi' an Polytechnic University, Xi' an 710048 (China); Fan, Huiqing, E-mail: hqfan3@163.com [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Wang, Xin [Shaanxi Province Thin Film Technology and Optical Test Open Key Laboratory, School of Photoelectrical Engineering, Xi' an Technological University, Xi' an 710032 (China); Wang, Jing [State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an 710072 (China); Cheng, Pengfei; Zhang, Xiaojun [School of Science, Xi' an Polytechnic University, Xi' an 710048 (China)

    2014-10-03

    Flower-like ZnO nanostructures have been successfully synthesized via a facile and template-free sonochemical method, using zinc acetate and potassium hydroxide as reactants only. The as-synthesized flower-like ZnO nanostructures were composed of nanorods with the width of ∼300–400 nm and the length of ∼2–3 μm. The structures, morphologies and optical properties of the as-prepared products were characterized by X-ray diffraction, scanning electron microscope, transmission electron microscopy, UV-Vis spectrophotometry and Raman-scattering spectroscopy. A plausible formation mechanism of flower-like ZnO nanostructures was studied by SEM which monitors an intermediate morphology transformation of the product at the different ultrasonic time (t=80,90,95,105, and 120 min). - Highlights: • A facile and template-free sonochemical method to fabricate flower-like ZnO nanostructures was proposed. • The flower-like ZnO nanostructures follow the ingrowth of ZnO from the matrix of Zn(OH){sub 2} crystals. • The flower-like ZnO nanostructures are also expected to explore their application in the field of nano-electronic devices.

  16. Template-free sonochemical synthesis of flower-like ZnO nanostructures

    International Nuclear Information System (INIS)

    Yu, Huawa; Fan, Huiqing; Wang, Xin; Wang, Jing; Cheng, Pengfei; Zhang, Xiaojun

    2014-01-01

    Flower-like ZnO nanostructures have been successfully synthesized via a facile and template-free sonochemical method, using zinc acetate and potassium hydroxide as reactants only. The as-synthesized flower-like ZnO nanostructures were composed of nanorods with the width of ∼300–400 nm and the length of ∼2–3 μm. The structures, morphologies and optical properties of the as-prepared products were characterized by X-ray diffraction, scanning electron microscope, transmission electron microscopy, UV-Vis spectrophotometry and Raman-scattering spectroscopy. A plausible formation mechanism of flower-like ZnO nanostructures was studied by SEM which monitors an intermediate morphology transformation of the product at the different ultrasonic time (t=80,90,95,105, and 120 min). - Highlights: • A facile and template-free sonochemical method to fabricate flower-like ZnO nanostructures was proposed. • The flower-like ZnO nanostructures follow the ingrowth of ZnO from the matrix of Zn(OH) 2 crystals. • The flower-like ZnO nanostructures are also expected to explore their application in the field of nano-electronic devices

  17. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    Energy Technology Data Exchange (ETDEWEB)

    Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

    2017-02-28

    Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  18. Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

    Energy Technology Data Exchange (ETDEWEB)

    Pineda-Hernandez, G. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Escobedo-Morales, A., E-mail: alejandroescobedo@hotmail.com [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Postal J-48, C.P. 72570 Puebla, Pue. (Mexico); Chigo-Anota, E. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico)

    2012-08-15

    In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed. -- Highlights: Black-Right-Pointing-Pointer Ga doped ZnO nanostructures were successfully grown by hydrothermal chemical route. Black-Right-Pointing-Pointer Ga doping has strong effect on the resulting morphology of ZnO nanostructures. Black-Right-Pointing-Pointer Anomalous vibrational modes in wurtzite ZnO lattice are induced by Ga doping. Black-Right-Pointing-Pointer Incorporated Ga atoms accommodate at preferential lattice sites.

  19. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    , or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

  20. Variable range hopping in ZnO films

    Science.gov (United States)

    Ali, Nasir; Ghosh, Subhasis

    2018-04-01

    We report the variable range hopping in ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. It has been found that Mott variable range hopping dominant over Efros variable range hopping in all ZnO films. It also has been found that hopping distance and energy increases with increasing oxygen partial pressure.

  1. Influence of Dopants in ZnO Films on Defects

    Science.gov (United States)

    Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

    2008-12-01

    The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

  2. The structural properties of flower-like ZnO nanostructures on porous silicon

    Science.gov (United States)

    Eswar, Kevin Alvin; Suhaimi, Mohd Husairi Fadzillah; Guliling, Muliyadi; Mohamad, Maryam; Khusaimi, Zuraida; Rusop, M.; Abdullah, Saifollah

    2018-05-01

    The flower-like zinc oxide (ZnO) were successfully synthesized on porous silicon (PSi) via hydrothermal method. The characteristic of ZnO nanostructures was investigated using field emission scanning microscopy (FESEM) and X-ray diffraction (X-Ray). The FESEM images show the flower-like ZnO nanostructures composed ZnO nanoparticles. The X-ray diffraction shows that strong intensity of (100), (002) and (101) peaks. The structural analysis revealed that the peaks angles were shifted due to the stress or imperfection of the crystalline of ZnO nanostructures. The crystalline sizes in range of 42.60 to 54.09 nm were produced.

  3. Shape-selective dependence of room temperature ferromagnetism induced by hierarchical ZnO nanostructures

    CSIR Research Space (South Africa)

    Motaung, DE

    2014-05-01

    Full Text Available . These materials were synthesized in a shape-selective manner using simple microwave assisted hydrothermal synthesis. Thermogravimetric analyses demonstrated the as-synthesized ZnO nanostructures to be stable and of high purity. Structural analyses showed...

  4. Photo-driven autonomous hydrogen generation system based on hierarchically shelled ZnO nanostructures

    International Nuclear Information System (INIS)

    Kim, Heejin; Yong, Kijung

    2013-01-01

    A quantum dot semiconductor sensitized hierarchically shelled one-dimensional ZnO nanostructure has been applied as a quasi-artificial leaf for hydrogen generation. The optimized ZnO nanostructure consists of one dimensional nanowire as a core and two-dimensional nanosheet on the nanowire surface. Furthermore, the quantum dot semiconductors deposited on the ZnO nanostructures provide visible light harvesting properties. To realize the artificial leaf, we applied the ZnO based nanostructure as a photoelectrode with non-wired Z-scheme system. The demonstrated un-assisted photoelectrochemical system showed the hydrogen generation properties under 1 sun condition irradiation. In addition, the quantum dot modified photoelectrode showed 2 mA/cm 2 current density at the un-assisted condition

  5. Fabrication of Semiconductor ZnO Nanostructures for Versatile SERS Application

    Directory of Open Access Journals (Sweden)

    Lili Yang

    2017-11-01

    Full Text Available Since the initial discovery of surface-enhanced Raman scattering (SERS in the 1970s, it has exhibited a huge potential application in many fields due to its outstanding advantages. Since the ultra-sensitive noble metallic nanostructures have increasingly exposed themselves as having some problems during application, semiconductors have been gradually exploited as one of the critical SERS substrate materials due to their distinctive advantages when compared with noble metals. ZnO is one of the most representative metallic oxide semiconductors with an abundant reserve, various and cost-effective fabrication techniques, as well as special physical and chemical properties. Thanks to the varied morphologies, size-dependent exciton, good chemical stability, a tunable band gap, carrier concentration, and stoichiometry, ZnO nanostructures have the potential to be exploited as SERS substrates. Moreover, other distinctive properties possessed by ZnO such as biocompatibility, photocatcalysis and self-cleaning, and gas- and chemo-sensitivity can be synergistically integrated and exerted with SERS activity to realize the multifunctional potential of ZnO substrates. In this review, we discuss the inevitable development trend of exploiting the potential semiconductor ZnO as a SERS substrate. After clarifying the root cause of the great disparity between the enhancement factor (EF of noble metals and that of ZnO nanostructures, two specific methods are put forward to improve the SERS activity of ZnO, namely: elemental doping and combination of ZnO with noble metals. Then, we introduce a distinctive advantage of ZnO as SERS substrate and illustrate the necessity of reporting a meaningful average EF. We also summarize some fabrication methods for ZnO nanostructures with varied dimensions (0–3 dimensions. Finally, we present an overview of ZnO nanostructures for the versatile SERS application.

  6. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  7. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    International Nuclear Information System (INIS)

    Samadi, Morasae; Zirak, Mohammad; Naseri, Amene; Khorashadizade, Elham; Moshfegh, Alireza Z.

    2016-01-01

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  8. Recent progress on doped ZnO nanostructures for visible-light photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Samadi, Morasae; Zirak, Mohammad [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Naseri, Amene [Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of); Khorashadizade, Elham [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Moshfegh, Alireza Z., E-mail: moshfegh@sharif.edu [Department of Physics, Sharif University of Technology, P.O. Box 11555-9161, Tehran (Iran, Islamic Republic of); Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11365-8639, Tehran (Iran, Islamic Republic of)

    2016-04-30

    Global environmental pollution and energy supply demand have been regarded as important concerns in recent years. Metal oxide semiconductor photocatalysts is a promising approach to apply environmental remediation as well as fuel generation from water splitting and carbon dioxide reduction. ZnO nanostructures have been shown promising photocatalytic activities due to their non-toxic, inexpensive, and highly efficient nature. However, its wide band gap hinders photo-excitation for practical photocatalytic applications under solar light as an abundant, clean and safe energy source. To overcome this barrier, many strategies have been developed in the last decade to apply ZnO nanostructured photocatalysts under visible light. In this review, we have classified different approaches to activate ZnO as a photocatalyst in visible-light spectrum. Utilization of various nonmetals, transition metals and rare-earth metals for doping in ZnO crystal lattice to create visible-light-responsive doped ZnO photocatalysts is discussed. Generation of localized energy levels within the gap in doped ZnO nanostructures has played an important role in effective photocatalytic reaction under visible-light irradiation. The effect of dopant type, ionic size and its concentration on the crystal structure, electronic property and morphology of doped ZnO with a narrower band gap is reviewed systematically. Finally, a comparative study is performed to evaluate two classes of metals and nonmetals as useful dopants for ZnO nanostructured photocatalysts under visible light. - Highlights: • Metals and nonmetals used as a dopant to shift ZnO band gap toward visible-light. • Modification of electronic structure played a crucial role in doped ZnO activity. • Correlation between dopant's characteristics and ZnO visible activity was reviewed. • Photo-degradation of doped ZnO was studied and compared for different dopants.

  9. Metal films with imprinted nanostructures by template stripping

    DEFF Research Database (Denmark)

    Eriksen, René Lynge; Pors, Anders; Dreier, Jes

    We present a novel template stripping procedure for fabricating metal films with imprinted nanostructures. The basic idea is to deposit a gold film onto a nano-structured substrate and subsequently strip the film from the substrate surface thereby revealing imprinted nanostructures in the film...... result is a thin gold film with imprinted nano-cavities....

  10. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  11. Controllable synthesis of periodic flower-like ZnO nanostructures on Si subwavelength grating structures

    International Nuclear Information System (INIS)

    Ko, Yeong Hwan; Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    We report on the periodic well-defined flower-like zinc oxide (ZnO) nanostructures (NSs) self-assembled through a simple hydrothermal method using silicon (Si) subwavelength grating (SWG) structures. The Si SWGs serve as building blocks for constructing a two-dimensional (2D) periodic architecture to integrate the one-dimensional (1D) ZnO NSs. Various controlled morphologies of ZnO NSs with high crystallinity are obtained by changing the growth conditions. For 1D ZnO NSs integrated on periodic hexagonal Si SWG structures, the reflection characteristics are investigated in comparison with the conventional ZnO nanorod (NR) arrays. For a three-dimensional (3D) flower-like ZnO NS on Si SWGs, a relatively low total reflectance of < 8% at wavelengths of 300-1050 nm is achieved compared to the ZnO NRs on Si substrate.

  12. Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal [Centre de Recherche sur la Matiere Divisee, CNRS-Universite d' Orleans, 1b rue de la Ferollerie, 45071 Orleans cedex 2 (France)

    2005-02-01

    One dimensional ZnO nanorods were successfully fabricated on Si substrates via a simple physical vapor-phase transport method at 950 C. A ZnO shell covered Au/Zn alloy is assumed as the nucleation site, then ZnO nanorods grow following a vapor-solid (VS) process. In order to guide the nanorod growth a c-axis oriented ZnO thin film and Au catalyst were first deposited on Si (100) surface. SEM images show nanorods grown on this substrate are vertical to the substrate surface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Three-dimensional ZnO hierarchical nanostructures: Solution phase synthesis and applications

    DEFF Research Database (Denmark)

    Wang, Xiaoliang; Ahmad, Mashkoor; Sun, Hongyu

    2017-01-01

    nanostructures in photocatalysis, field emission, electrochemical sensor, and lithium ion batteries. Throughout the discussion, the relationship between the device performance and the microstructures of 3D ZnO hierarchical nanostructures will be highlighted. This review concludes with a personal perspective...

  14. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  15. Use of Nanostructured ZnO for Production of Antimicrobial Textiles

    International Nuclear Information System (INIS)

    Chit Ko Ko Htwe

    2011-12-01

    An awareness of general sanitation, contact disease transmission, and personal protection has led to the development of antimicrobial textiles. The development of antimicrobial fabrics using nanostructure ZnO has been investigated in this present work. The nanostructure ZnO were produced using a microwave irradiation without any other calcinations and were directly applied on to the fabric using pad-dry-cure method.Synthesized nanostructure ZnO were characterized by XRD and SEM for ZnO purification and particle size examination. The antibacterial activity of the finished fabrics was assessed qualitatively by agar diffusion method. The results show that the finished fabric demonstrated significant antibacterial activity against Staphylococcus aureus and Escherichia coli in qualitative test.

  16. From Bloch to random lasing in ZnO self-assembled nanostructures

    DEFF Research Database (Denmark)

    Garcia-Fernandez, Pedro David; Cefe, López

    2013-01-01

    In this paper, we present measurements on UV lasing in ZnO ordered and disordered nanostructures. Bloch lasing is achieved in the ordered structures by exploiting very low group-velocity Bloch modes in ZnO photonic crystals. In the second case, random lasing is observed in ZnO photonic glasses. We...... study the lasing threshold in both cases and its dependence on the structural parameters. Finally, we present the transition from Bloch to random lasing by deliberately doping a ZnO inverse photonic crystal with a controlled amount of lattice vacancies effectively converting it into a translationally...

  17. Effect of morphology on the non-ohmic conduction in ZnO nanostructures

    Science.gov (United States)

    Praveen, E.; Jayakumar, K.

    2016-05-01

    Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

  18. Numerical simulations of nanostructured gold films

    DEFF Research Database (Denmark)

    Repän, Taavi; Frydendahl, Christian; Novikov, Sergey M.

    2017-01-01

    We present an approach to analyse near-field effects on nanostructured gold films by finite element simulations. The studied samples are formed by fabricating gold films near the percolation threshold and then applying laser damage. Resulting samples have complicated structures, which...

  19. Effect of polar and non-polar surfaces of ZnO nanostructures on photocatalytic properties

    International Nuclear Information System (INIS)

    Yang Jinghai; Wang Jian; Li Xiuyan; Lang Jihui; Liu Fuzhu; Yang Lili; Zhai Hongju; Gao Ming; Zhao Xiaoting

    2012-01-01

    Highlights: ► Large-scale arrayed ZnO nanocrystals including ZnO hexagonal platforms and hamburger-like samples have been successfully fabricated by a simple hydrothermal method. ► ZnO with hexagonal platform-like morphology exhibited higher photocatalytic activity compared with that of the hamburger-like ZnO nanostructures. ► The theories of expose surfaces and oxygen vacancies were utilized to explain the photocatalytic mechanism. - Abstract: Large-scale arrayed ZnO nanocrystals with two different expose surfaces, including ZnO hexagonal nanoplatforms with the major expose plane of (0 0 0 1) and hamburger-like samples with the nonpolar planes of {101 ¯ 0} mainly exposed, were successfully fabricated by a simple hydrothermal method. Mechanisms for compare the photocatalytic activity of two typical ZnO nanostructures were systematic explained as the key point in the paper. Compared with the hamburger-like ZnO nanostructures, the ZnO with hexagonal platform-like morphology exhibited improved ability on the photocatalytic degradation of Rhodamine B (RhB) in aqueous solution under UV radiation. The relative higher photocatalytic activity of the ZnO hexagonal nanoplatforms was attributed to the exposed polar surfaces and the content of oxygen vacancy on the nanostructures surface. The Zn-terminated (0 0 0 1) polar face and the surface defects are facile to adsorb O 2− and OH − ions, resulting in a greater production rate of O 2 · − and OH· − , hence promoting the photocatalysis reaction.

  20. Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

    Science.gov (United States)

    Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

    2017-11-01

    Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

  1. Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay

    International Nuclear Information System (INIS)

    Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo; Mohamed, Azman Seeni; Saifuddin, Siti Nazmin; Masudi, Sam’an Malik; Mohamad, Dasmawati

    2015-01-01

    ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shifted of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line

  2. Toxicity evaluation of ZnO nanostructures on L929 fibroblast cell line using MTS assay

    Energy Technology Data Exchange (ETDEWEB)

    Bakhori, Siti Khadijah Mohd; Mahmud, Shahrom; Ann, Ling Chuo [Nano-optoelectronics Research and Technology Laboratory (NOR.), School of Physics, Universiti Sains Malaysia, 11800, USM, Pulau Pinang (Malaysia); Mohamed, Azman Seeni; Saifuddin, Siti Nazmin [Integrative Medicine Cluster, Advanced Medical and Dental Institute, Universiti Sains Malaysia, Bandar Putra Bertam, 13200 Kepala Batas, Pulau Pinang (Malaysia); Masudi, Sam’an Malik; Mohamad, Dasmawati [Craniofacial Science Laboratory, School of Dentistry, Health Campus, Universiti Sains Malaysia, 16150 Kubang Kerian, Kelantan (Malaysia)

    2015-04-24

    ZnO has wide applications in medical and dentistry apart from being used as optoelectronic devices such as solar cells, photodetectors, sensors and light emitting diodes (LEDs). Therefore, the toxicity evaluation is important to know the toxicity level on normal cell line. The toxicity of two grades ZnO nanostructures, ZnO-4 and ZnO-8 have been carried out using cytotoxicity test of MTS assay on L929 rat fibroblast cell line. Prior to that, ZnO-4 and ZnO-8 were characterized for its morphology, structure and optical properties using FESEM, X-ray diffraction, and Photoluminescence respectively. The two groups revealed difference in morphology and exhibit slightly shifted of near band edge emission of Photoluminescence other than having a similar calculated crystallite size of nanostructures. The viability of cells after 72h were obtained and the statistical significance value was calculated using SPSS v20. The p value is more than 0.05 between untreated and treated cell with ZnO. This insignificant value of p>0.05 can be summarized as a non-toxic level of ZnO-4 and ZnO-8 on the L929 cell line.

  3. Enhancing the numerical aperture of lenses using ZnO nanostructure-based turbid media

    International Nuclear Information System (INIS)

    Khokhra, Richa; Barman, Partha Bir; Kumar, Rajesh; Kumar, Manoj; Rawat, Nitin; Jang, Hwanchol; Lee, Heung-No

    2013-01-01

    Nanosheets, nanoparticles, and microstructures of ZnO were synthesized via a wet chemical method. ZnO films with a thickness of 44–46 μm were fabricated by spray coating, and these have been investigated for their potential use in turbid lens applications. A morphology-dependent comparative study of the transmittance of ZnO turbid films was conducted. Furthermore, these ZnO turbid films were used to enhance the numerical aperture (NA) of a Nikon objective lens. The variation in NA with different morphologies was explained using size-dependent scattering by the fabricated films. A maximum NA of around 1.971 of the objective lens with a turbid film of ZnO nanosheets was achieved. (paper)

  4. Development and surface characterization of a glucose biosensor based on a nanocolumnar ZnO film

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, A., E-mail: adriana.rodrigues@partner.kit.edu [Instituto de Física − UFRGS, P.O. Box 15051, 91501-970 Porto Alegre, RS (Brazil); Castegnaro, M.V. [Instituto de Física − UFRGS, P.O. Box 15051, 91501-970 Porto Alegre, RS (Brazil); Arguello, J.; Alves, M.C.M. [Instituto de Química − UFRGS, P.O. Box 15003, 91501-970 Porto Alegre, RS (Brazil); Morais, J., E-mail: jonder@if.ufrgs.br [Instituto de Física − UFRGS, P.O. Box 15051, 91501-970 Porto Alegre, RS (Brazil)

    2017-04-30

    Highlights: • Glucose biosensor based on self-assembled nanocolumnar ZnO deposited on stainless steel. • XPS applied to investigate the GOx immobilization on the ZnO nanocolumns surface. • Observable chemical shifts on O1s and Zn2p corroborates enzime immobilization. - Abstract: Highly oriented nanostructured ZnO films were grown on the surface of stainless steel plates (ZnO/SS) by chemical bath deposition (CBD). The films consisted of vertically aligned ZnO nanocolumns, ∼1 μm long and ∼80 nm wide, as observed by SEM (scanning electron microscopy) and FIB (focused ion beam). XRD (X-ray diffraction) confirmed the c-axis preferred orientation of the ZnO columns, which were functionalized with the glucose oxidase (GOx) enzyme into a biosensor of glucose. The electrochemical response studied by CV (cyclic voltammetry) proved that the biosensor was capable of detecting glucose from 1.5 up to 16 mM concentration range. XPS (X-ray photoelectron spectroscopy) analysis, excited with synchrotron radiation, probed the atom specific chemical environment at the electrode’s surface and shed some light on the nature of the ZnO-GOx interaction.

  5. Electrosynthesis and characterization of ZnO nanoparticles as inorganic component in organic thin-film transistor active layers

    International Nuclear Information System (INIS)

    Picca, Rosaria Anna; Sportelli, Maria Chiara; Hötger, Diana; Manoli, Kyriaki; Kranz, Christine; Mizaikoff, Boris; Torsi, Luisa; Cioffi, Nicola

    2015-01-01

    Highlights: • PSS-capped ZnO NPs were synthesized via a green electrochemical-thermal method • The influence of electrochemical conditions and temperature was studied • Spectroscopic data show that PSS functionalities are retained in the annealed NPs • Nanostructured ZnO improved the performance of P3HT-based thin film transistors - Abstract: ZnO nanoparticles have been prepared via a green electrochemical synthesis method in the presence of a polymeric anionic stabilizer (poly-sodium-4-styrenesulfonate, PSS), and then applied as inorganic component in poly-3-hexyl-thiophene thin-film transistor active layers. Different parameters (i.e. current density, electrolytic media, PSS concentration, and temperature) influencing nanoparticle synthesis have been studied. The resulting nanomaterials have been investigated by transmission electron microscopy (TEM) and spectroscopic techniques (UV-Vis, infrared, and x-ray photoelectron spectroscopies), assessing the most suitable conditions for the synthesis and thermal annealing of nanostructured ZnO. The proposed ZnO nanoparticles have been successfully coupled with a poly-3-hexyl-thiophene thin-film resulting in thin-film transistors with improved performance.

  6. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

  7. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)

    2013-12-15

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.

  8. Effect of nickel doping on the photocatalytic activity of ZnO thin films under UV and visible light

    International Nuclear Information System (INIS)

    Kaneva, Nina V.; Dimitrov, Dimitre T.; Dushkin, Ceco D.

    2011-01-01

    Nanostructured ZnO thin films with different concentrations of Ni 2+ doping (0, 1, 5, 10 and 15 wt.%) are prepared by the sol-gel method for the first time. The thin films are prepared from zinc acetate, 2-methoxyethanol and monoethanolamine on glass substrates by using dip coating method. The films comprise of ZnO nanocrystallites with hexagonal crystal structure, as revealed by X-ray diffraction. The film surface is with characteristic ganglia-like structure as observed by Scanning Electron Microscopy. Furthermore, the Ni-doped films are tested with respect to the photocatalysis in aqueous solutions of malachite green upon UV-light illumination, visible light and in darkness. The initial concentration of malachite green and the amount of catalyst are varied during the experiments. It is found that increasing of the amount of Ni 2+ ions with respect to ZnO generally lowers the photocatalytic activity in comparison with the pure ZnO films. Nevertheless, all films exhibit a substantial activity under both, UV and visible light and in darkness as well, which is promising for the development of new ZnO photocatalysts by the sol-gel method.

  9. Influence of ZnO nanostructures in liquid crystal interfaces for bistable switching applications

    Energy Technology Data Exchange (ETDEWEB)

    Pal, Kaushik, E-mail: kaushikpal@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Zhan, Bihong, E-mail: bihong_zhan@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China); Madhu Mohan, M.L.N. [Liquid Crystal Research Laboratory (LCRL), Bannari Amman Institute of Technology, Sathyamangalam 638 401 (India); Schirhagl, Romana [University Medical Center Groningen, Department of BioMedical Engineering, Ant. Deusinglaan 1, 9713 AV Groningen (Netherlands); Wang, Guoping, E-mail: guopingwang@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, 8 East Lake South Road, Wuhan 430072 (China)

    2015-12-01

    Graphical abstract: - Highlights: • One step bench top novel synthesis and growth dynamics of ZnO structures are successfully performed. • Nanostructures dispersing liquid crystals (NDLC) is recently found to have significant influence on the nucleation and growth of many functional nanocrystals (NCs), and provide a fundamental approach to modify the crystallographic phase, size, morphology, and electronic configuration of nanomaterials. • Electro-optical switching application ensures the bright field droplet design marble pattern of smectic G phase, nematic and most significant twist nematic phase pattern are obtained. • Spontaneous polarization, rotational viscosity and response time study, exploring smart applications in LCD technology. - Abstract: The controlled fabrication of nanometer-scale objects is without doubt one of the central issues in current science and technology. In this article, we exhibit a simple, one-step bench top synthesis of zinc oxide nano-tetrapods and nano-spheres which were tailored by the facial growth of nano-wires (diameter ≈ 24 nm; length ≈ 118 nm) and nano-cubes (≈395 nm edge) to nano-sphere (diameter ≈ 585 nm) appeaded. The possibilities of inexpensive, simple solvo-chemical synthesis of nanostructures were considered. In this article, a successful attempt has been made that ZnO nano-structures dispersed on well aligned hydrogen bonded liquid crystals (HBLC) comprising azelaic acid (AC) with p-n-alkyloxy benzoic acid (nBAO) by varying the respective alkyloxy carbon number (n = 5). The dispersion of nanomaterials with HBLC is an effective route to enhance the existing functionalities. A series of these composite materials were analyzed by polarizing optical microscope's electro-optical switching. An interesting feature of AC + nBAO is the inducement of tilted smectic G phase with increasing carbon chain length. Phase diagrams of the above hybrid ZnO nanomaterial influenced LC complex and pure LC were

  10. ZnO nanostructure fabrication in different solvents transforms physio-chemical, biological and photodegradable properties

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Attarad; Ambreen, Sidra; Javed, Rabia; Tabassum, Saira [Department of Biotechnology, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Ul Haq, Ihsan [Department of Pharmacy, Quaid-i-Azam University, Islamabad 45320 (Pakistan); Zia, Muhammad, E-mail: ziachaudhary@gmail.com [Department of Biotechnology, Quaid-i-Azam University, Islamabad 45320 (Pakistan)

    2017-05-01

    Zinc oxide (ZnO) nanostructures are synthesized in various organic solvents (acetone, chloroform, ethyl acetate, ethanol and methanol) and water via coprecipitation process using zinc acetate as precursor. The resultant ZnO nanoparticles, nano rods and nano sheets are characterized by UV–vis spectrophotometric analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transmission infrared spectroscopy (FTIR), and energy dispersive X-ray spectroscopy (EDX). The variable size and geometry of nanoparticles depend upon medium used for synthesis. The synthesized ZnO nanostructures exhibit minor to moderate antioxidative (DPPH based free radical scavenging activity, total antioxidative potential and total reducing power) response. Mild to moderate antibacterial and antifungal activities, excellent antileishmanial potential (IC50 up to 3.76), and good cytotoxic perspective (LD50 up to 49.4) is also observed by the synthesized ZnO NPs. The nanoparticles also exhibit moderate α-amylase inhibition response. Furthermore the nanostructures are evaluated for methylene blue photodegradation response within 60 min time period. It is found that organic solvent alters shape, size and other physio-chemical properties of ZnO that ultimately modulate the biological, chemical, and environmental properties. - Highlights: • Zinc oxide nanoparticles are fabricated in different solvents using co-precipitation method • SEM, XRD and FTIR analysis confirms variation in physical and chemical characteristics of synthesized ZnO NPs • The synthesized ZnO demonstrates variation in biological, phytochemical and photodegradable properties.

  11. ZnO nanostructure fabrication in different solvents transforms physio-chemical, biological and photodegradable properties

    International Nuclear Information System (INIS)

    Ali, Attarad; Ambreen, Sidra; Javed, Rabia; Tabassum, Saira; Ul Haq, Ihsan; Zia, Muhammad

    2017-01-01

    Zinc oxide (ZnO) nanostructures are synthesized in various organic solvents (acetone, chloroform, ethyl acetate, ethanol and methanol) and water via coprecipitation process using zinc acetate as precursor. The resultant ZnO nanoparticles, nano rods and nano sheets are characterized by UV–vis spectrophotometric analysis, scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transmission infrared spectroscopy (FTIR), and energy dispersive X-ray spectroscopy (EDX). The variable size and geometry of nanoparticles depend upon medium used for synthesis. The synthesized ZnO nanostructures exhibit minor to moderate antioxidative (DPPH based free radical scavenging activity, total antioxidative potential and total reducing power) response. Mild to moderate antibacterial and antifungal activities, excellent antileishmanial potential (IC50 up to 3.76), and good cytotoxic perspective (LD50 up to 49.4) is also observed by the synthesized ZnO NPs. The nanoparticles also exhibit moderate α-amylase inhibition response. Furthermore the nanostructures are evaluated for methylene blue photodegradation response within 60 min time period. It is found that organic solvent alters shape, size and other physio-chemical properties of ZnO that ultimately modulate the biological, chemical, and environmental properties. - Highlights: • Zinc oxide nanoparticles are fabricated in different solvents using co-precipitation method • SEM, XRD and FTIR analysis confirms variation in physical and chemical characteristics of synthesized ZnO NPs • The synthesized ZnO demonstrates variation in biological, phytochemical and photodegradable properties.

  12. Three-Dimensional ZnO Hierarchical Nanostructures: Solution Phase Synthesis and Applications

    Directory of Open Access Journals (Sweden)

    Xiaoliang Wang

    2017-11-01

    Full Text Available Zinc oxide (ZnO nanostructures have been studied extensively in the past 20 years due to their novel electronic, photonic, mechanical and electrochemical properties. Recently, more attention has been paid to assemble nanoscale building blocks into three-dimensional (3D complex hierarchical structures, which not only inherit the excellent properties of the single building blocks but also provide potential applications in the bottom-up fabrication of functional devices. This review article focuses on 3D ZnO hierarchical nanostructures, and summarizes major advances in the solution phase synthesis, applications in environment, and electrical/electrochemical devices. We present the principles and growth mechanisms of ZnO nanostructures via different solution methods, with an emphasis on rational control of the morphology and assembly. We then discuss the applications of 3D ZnO hierarchical nanostructures in photocatalysis, field emission, electrochemical sensor, and lithium ion batteries. Throughout the discussion, the relationship between the device performance and the microstructures of 3D ZnO hierarchical nanostructures will be highlighted. This review concludes with a personal perspective on the current challenges and future research.

  13. Surface morphology effects on the light-controlled wettability of ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Khranovskyy, V., E-mail: volkh@ifm.liu.se [Department of Physics, Chemistry and Biology (IFM), Linkoping University (Sweden); Ekblad, T.; Yakimova, R.; Hultman, L. [Department of Physics, Chemistry and Biology (IFM), Linkoping University (Sweden)

    2012-08-01

    ZnO nanostructures of diverse morphology with shapes of corrals and cabbages as well as open and filled hexagons and sheaves prepared by APMOCVD technique, are investigated with water contact angle (CA) analysis. The as-grown ZnO nanostructures exhibit pure hydrophobic behavior, which is enhanced with the increase of the nanostructure's surface area. The most hydrophobic structures (CA = 124 Degree-Sign ) were found to be the complex nanosheaf, containing both the macro-and nanoscale features. It is concluded that the nanoscale roughness contributes significantly to the hydrophobicity increase. The character of wettability was possible to switch from hydrophobic-to-superhydrophilic state upon ultra violet irradiation. Both the rate and amplitude of the contact angle depend on the characteristic size of nanostructure. The observed effect is explained due to the semiconductor properties of zinc oxide enhanced by increased surface chemistry effect in nanostructures.

  14. Structural, optical and photocatalytic properties of flower-like ZnO nanostructures prepared by a facile wet chemical method

    Directory of Open Access Journals (Sweden)

    Sini Kuriakose

    2013-11-01

    Full Text Available Flower-like ZnO nanostructures were synthesized by a facile wet chemical method. Structural, optical and photocatalytic properties of these nanostructures have been studied by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, photoluminescence (PL and UV–vis absorption spectroscopy. SEM and TEM studies revealed flower-like structures consisting of nanosheets, formed due to oriented attachment of ZnO nanoparticles. Flower-like ZnO structures showed enhanced photocatalytic activity towards sun-light driven photodegradation of methylene blue dye (MB as compared to ZnO nanoparticles. XRD, UV–vis absorption, PL, FTIR and TEM studies revealed the formation of Zn(OH2 surface layer on ZnO nanostructures upon ageing. We demonstrate that the formation of a passivating Zn(OH2 surface layer on the ZnO nanostructures upon ageing deteriorates their efficiency to photocatalytically degrade of MB.

  15. Photoelectrochemical properties of hierarchical ZnO micro-nanostructure sensitized with Sb2S3 nanoparticles

    Directory of Open Access Journals (Sweden)

    Zhimin GUO

    2016-02-01

    Full Text Available By using electrochemical deposition method, and assisted with additions of PEG-400 and EDA, well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass (ITO substrate. The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method. SEM, XRD, UV-Vis and photocurrent test are used to characterize the morphology, nanostructures and their photoelectrochemical properties. The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.

  16. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  17. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Science.gov (United States)

    Yu, Z. X.; Ma, Y. Z.; Zhao, Y. L.; Huang, J. B.; Wang, W. Z.; Moliere, M.; Liao, H. L.

    2017-08-01

    Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P(002). It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the "first principle calculation method" and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have favorable performances to be used as sensitive layer in gas sensing applications.

  18. Electrochemical synthesis and characterization of hierarchically branched ZnO nanostructures on ensembles of gold nanowires

    International Nuclear Information System (INIS)

    Ongaro, Michael; Gambirasi, Arianna; Favaro, Monica; Ugo, Paolo

    2012-01-01

    Highlights: ► ZnO branched nanofibres for photoelectrochemical applications. ► Branched nanostructures are obtained by electrochemical deposition of ZnO on gold template nanowires. ► Branched nanowires crystallographic phase determined by electron back scatter diffraction. ► Branched structures display improved performances for the photoelectrochemical oxidation of water. - Abstract: This study presents an electrosynthetic methodology to obtain hierarchically structured ZnO electrodes with improved surface area, by exploiting gold nanowires ensembles (3D-NEEs) as the growing substrate. By this way, semiconductor electrodes organized in the shape of fir-like branches are obtained. Branched nanofibres are characterized by electron microscopy and electron backscatter diffraction (EBSD), the latter technique allowing the determination of the crystalline habit of individual nanostructures. The hierarchical branched nanowires show enhanced performances with respect to water photooxidation in comparison with already known nanostructured materials such as 1D-ZnO nanowires.

  19. A Review on the Fabrication of Hierarchical ZnO Nanostructures for Photocatalysis Application

    Directory of Open Access Journals (Sweden)

    Yi Xia

    2016-11-01

    Full Text Available Semiconductor photocatalysis provides potential solutions for many energy and environmental-related issues. Recently, various semiconductors with hierarchical nanostructures have been fabricated to achieve efficient photocatalysts owing to their multiple advantages, such as high surface area, porous structures, as well as enhanced light harvesting. ZnO has been widely investigated and considered as the most promising alternative photocatalyst to TiO2. Herein, we present a review on the fabrication methods, growth mechanisms and photocatalytic applications of hierarchical ZnO nanostructures. Various synthetic strategies and growth mechanisms, including multistep sequential growth routes, template-based synthesis, template-free self-organization and precursor or self-templating strategies, are highlighted. In addition, the fabrication of multicomponent ZnO-based nanocomposites with hierarchical structures is also included. Finally, the application of hierarchical ZnO nanostructures and nanocomposites in typical photocatalytic reactions, such as pollutant degradation and H2 evolution, is reviewed.

  20. High Quality Zinc Oxide Thin films and Nanostructures Prepared by Pulsed Laser Deposition for Photodetectors

    KAUST Repository

    Flemban, Tahani H.

    2017-12-11

    Zinc oxide (ZnO) semiconductors have been utilized by many researchers, due to its unique properties beneficial for functional devices. In particular, gadolinium (Gd)–doped ZnO exhibits high ferromagnetic and electrical properties, which is attributed to defect/impurity bands mediated by Gd dopants. In this dissertation, I study the effects of Gd concentration, oxygen pressure using pulsed laser deposition (PLD), and thermal annealing on the optical and structural properties of undoped and Gd-doped ZnO films and nanostructures. Moreover, as the growth of practical ZnO nanostructures-based devices without catalyst, while presently challenging, is highly important for many applications. Thus, for the first time, a novel method is developed for growing well aligned ZnO nanorods (NRs) by optimizing PLD conditions using Gd-doped ZnO target without any catalyst in a single step. This study shows that, both the lattice orientation of the substrate and the Gd characteristics are significant in enhancing the NR growth. Our findings reveal that precise control of the NR density can be achieved by changing the oxygen partial pressure. Furthermore, due to the Gd incorporation, these NRs possess favorable electrical properties with a significant mobility of 177 cm2 (V.s)-1 compared to that reported in literature. Nonetheless significant challenges need to be overcome to achieve reproducible and stable p-type ZnO for commercial applications. Hence, several attempts based on n-type ZnO grown on foreign p-type substrates were made to achieve high-performance devices and overcome the issues arising when p-type doped ZnO is employed. Moreover, Growth of ZnO nanostructures on a foreign p-type substrates does not require a lattice-matched p-type substrate. Thus, for the first time, PLD conditions are improved to grow high quality ZnO nanotubes (NTs) with high optical, structural and electrical properties on a p-type Si (100) substrate without catalyst for high-performance devices. A

  1. Synthesis of cadmium oxide doped ZnO nanostructures using electrochemical deposition

    International Nuclear Information System (INIS)

    Singh, Trilok; Pandya, D.K.; Singh, R.

    2011-01-01

    Research highlights: → Ternary ZnCdO alloy semiconductor nanostructures were grown using electrochemical deposition. → X-ray diffraction measurements showed that the nanostructures were of wurtzite structure and possessed a compressive stress along the c-axis direction. → The cut-off wavelength shifted from blue to red on account of the Cd incorporation in the ZnO and the average transmittance decreased by ∼31%. → The bandgap tuning for 4-16 at% Cd in the initial solution was achieved in the range of 3.08-3.32 eV (up to 0.24 eV). - Abstract: Ternary ZnCdO alloy semiconductor nanostructures were grown using electrochemical deposition. Crystalline nanostructures/nanorods with cadmium concentration ranging from 4 to 16 at% in the initial solution were electrodeposited on tin doped indium oxide (ITO) conducting glass substrates at a constant cathodic potential -0.9 V and subsequently annealed in air at 300 deg. C. X-ray diffraction measurements showed that the nanostructures were of wurtzite structure and possessed a compressive stress along the c-axis direction. The elemental composition of nanostructures was confirmed by energy dispersive spectroscopy (EDS). ZnO nanostructures were found to be highly transparent and had an average transmittance of 85% in the visible range of the spectrum. After the incorporation of Cd content into ZnO the average transmittance decreased and the bandgap tuning was also achieved.

  2. Synthesis and characterization of flowerlike ZnO nanostructures via an ethylenediamine-meditated solution route

    International Nuclear Information System (INIS)

    Gao Xiangdong; Li Xiaomin; Yu Weidong

    2005-01-01

    Flowerlike ZnO nanostructures were deposited on Si substrate by choosing hexamethylenetetramine as the nucleation control reagent and ethylenediamine as the chelating and capping reagent. Structural and optical measurements reveal that obtained ZnO exhibits well-defined flowerlike morphology, hexagonal wurtzite structure, uniform distribution on substrate, and strong photoluminescence in ultraviolet band. The well-arrayed pedals of each ZnO flower possess the typical tapering feature, and are built up by many well-aligned ZnO nanorods. Moreover, each single nanorod building up the pedal exhibits the single crystal nature and the growth direction along c-axis. Effects of the precursor composition on the morphology of ZnO were discussed

  3. Surface roughness of sputtered ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y S [Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd. Shou-Feng, Hualien, Taiwan (China); Hsu, K C [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China); Huang, Y M [Institute of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Taiwan (China)

    2006-09-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D{sub ts}) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D{sub ts}, root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved.

  4. Surface roughness of sputtered ZnO films

    International Nuclear Information System (INIS)

    Lin, Y S; Hsu, K C; Huang, Y M

    2006-01-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D ts ) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D ts , root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved

  5. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    International Nuclear Information System (INIS)

    Yu, Z.X.; Ma, Y.Z.; Zhao, Y.L.; Huang, J.B.; Wang, W.Z.; Moliere, M.; Liao, H.L.

    2017-01-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P_(_0_0_2_)_. It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  6. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Z.X., E-mail: zexin.yu@utbm.fr [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Ma, Y.Z., E-mail: yangzhou.ma@outlook.com [School of Materials Science and Engineering, Anhui University of Technology, Ma’anshan 243002 (China); Zhao, Y.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Huang, J.B.; Wang, W.Z. [Key Lab of Safety Science of Pressurized System, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237 (China); Moliere, M.; Liao, H.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France)

    2017-08-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P{sub (002).} It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  7. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; MARTINEZ-MIRANDA,L.J.; BARBOUR,J. CHARLES; SIMPSON,REGINA L.; OVERMYER,DONALD L.

    2000-01-27

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of 3- and 4-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetic of PLD growth results in films becoming more ``diamondlike'', i.e. increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film.

  8. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  9. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    OpenAIRE

    Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

  10. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate

    International Nuclear Information System (INIS)

    Rahmanian, Reza; Mozaffari, Sayed Ahmad; Abedi, Mohammad

    2015-01-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO–PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO 2 conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO–PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO–PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE–SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV–Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0–110.0 mg dL −1 with the limit of detection as 5.0 mg dL −1 . - Highlights: • Novel disposable impedimetric urea biosensor fabrication based on ZnO–nanoporous transducer • Exploiting omissible PVA polymer as a simple strategy for ZnO–nanoporous film preparation • ZnO–nanoporous film as a good pore framework with large surface area/volume for enzyme immobilization • Application of impedimetric measurement for urea monitoring due to its rapidity, sensitivity, and repeatability

  11. Disposable urea biosensor based on nanoporous ZnO film fabricated from omissible polymeric substrate

    Energy Technology Data Exchange (ETDEWEB)

    Rahmanian, Reza; Mozaffari, Sayed Ahmad, E-mail: mozaffari@irost.ir; Abedi, Mohammad

    2015-12-01

    In the present study, a facile and simple fabrication method of a semiconductor based urea biosensor was reported via three steps: (i) producing a ZnO–PVA composite film by means of a polymer assisted electrodeposition of zinc oxide (ZnO) on the F-doped SnO{sub 2} conducting glass (FTO) using water soluble polyvinyl alcohol (PVA), (ii) obtaining a nanoporous ZnO film by PVA omission via a subsequent post-treatment by annealing of the ZnO–PVA film, and (iii) preparation of a FTO/ZnO/Urs biosensor by exploiting a nanoporous ZnO film as an efficient and excellent platform area for electrostatic immobilization of urease enzyme (Urs) which was forced by the difference in their isoelectric point (IEP). The characterization techniques focused on the analysis of the ZnO–PVA film surfaces before and after annealing, which had a prominent effect on the porosity of the prepared ZnO film. The surface characterization of the nanostructured ZnO film by a field emission-scanning electron microscopy (FE–SEM), exhibited a film surface area as an effective bio-sensing matrix for enzyme immobilization. The structural characterization and monitoring of the biosensor fabrication was performed using UV–Vis, Fourier Transform Infrared (FT-IR), Raman Spectroscopy, Thermogravimetric Analysis (TGA), Cyclic Voltammetry (CV), and Electrochemical Impedance Spectroscopy (EIS) techniques. The impedimetric results of the FTO/ZnO/Urs biosensor showed a high sensitivity for urea detection within 8.0–110.0 mg dL{sup −1} with the limit of detection as 5.0 mg dL{sup −1}. - Highlights: • Novel disposable impedimetric urea biosensor fabrication based on ZnO–nanoporous transducer • Exploiting omissible PVA polymer as a simple strategy for ZnO–nanoporous film preparation • ZnO–nanoporous film as a good pore framework with large surface area/volume for enzyme immobilization • Application of impedimetric measurement for urea monitoring due to its rapidity, sensitivity, and

  12. On quantum efficiency of photoluminescence in ZnO layers and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

    2009-12-15

    In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

  13. The SL-assisted synthesis of hierarchical ZnO nanostructures and their enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Miao Tingting; Guo Yuanru; Pan Qingjiang

    2013-01-01

    Hierarchical ZnO nanoparticle-bar, nanomesh-lamina, and quasi-nanosphere structures have been successfully synthesized by the precipitation method with assistance of sodium lignosulphonate (SL). It is shown that the obtained ZnO nanomaterials are well crystallized and possess hexagonal wurtzite structure after calcination. Morphologies of ZnO with particle sizes ranging from 50 to 200 nm can be fabricated by tuning the SL amount in our synthetic route. Plenty of pores have been observed both in nanoparticle-bar and nanomesh-lamina ZnO. This may provide scaffold microenvironments to enhance their photocatalytic activity. It is evident that the synthesized ZnO exhibits good photocatalytic activity of degrading methylene blue, even under a very low-power UV illumination, which allows for the treatment of wastewater containing organic pollutants in an effective way. Among our synthesized nanomaterials, the nanomesh-lamina ZnO has the highest photodegradation efficiency, achieving nearly 100 % degradation only within 1.5 h (UV irradiation power of 12 W). As these ZnO nanomaterials are simply synthesized using SL which is a pulp industry by-product and their intrinsic hierarchical nanostructures show outstanding photocatalytic behavior, we expect the present controllable, environment-friendly, and cost-effective approach to be applied in the synthesis of small-sized ZnO materials.

  14. The SL-assisted synthesis of hierarchical ZnO nanostructures and their enhanced photocatalytic activity

    Science.gov (United States)

    Miao, Ting-Ting; Guo, Yuan-Ru; Pan, Qing-Jiang

    2013-06-01

    Hierarchical ZnO nanoparticle-bar, nanomesh-lamina, and quasi-nanosphere structures have been successfully synthesized by the precipitation method with assistance of sodium lignosulphonate (SL). It is shown that the obtained ZnO nanomaterials are well crystallized and possess hexagonal wurtzite structure after calcination. Morphologies of ZnO with particle sizes ranging from 50 to 200 nm can be fabricated by tuning the SL amount in our synthetic route. Plenty of pores have been observed both in nanoparticle-bar and nanomesh-lamina ZnO. This may provide scaffold microenvironments to enhance their photocatalytic activity. It is evident that the synthesized ZnO exhibits good photocatalytic activity of degrading methylene blue, even under a very low-power UV illumination, which allows for the treatment of wastewater containing organic pollutants in an effective way. Among our synthesized nanomaterials, the nanomesh-lamina ZnO has the highest photodegradation efficiency, achieving nearly 100 % degradation only within 1.5 h (UV irradiation power of 12 W). As these ZnO nanomaterials are simply synthesized using SL which is a pulp industry by-product and their intrinsic hierarchical nanostructures show outstanding photocatalytic behavior, we expect the present controllable, environment-friendly, and cost-effective approach to be applied in the synthesis of small-sized ZnO materials.

  15. Relationships among surface processing at the nanometer scale, nanostructure and optical properties of thin oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria

    2004-05-01

    Spectroscopic ellipsometry is used to study the optical properties of nanostructured semiconductor oxide thin films. Various examples of models for the dielectric function, based on Lorentzian oscillators combined with the Drude model, are given based on the band structure of the analyzed oxide. With this approach, the optical properties of thin films are determined independent of the dielectric functions of the corresponding bulk materials, and correlation between the optical properties and nanostructure of thin films is investigated. In particular, in order to discuss the dependence of optical constants on grain size, CeO{sub 2} nanostructured films are considered and parameterized by two-Lorentzian oscillators or two-Tauc-Lorentz model depending on the nanostructure and oxygen deficiency. The correlation among anisotropy, crystalline fraction and optical properties parameterized by a four-Lorentz oscillator model is discussed for nanocrystalline V{sub 2}O{sub 5} thin films. Indium tin oxide thin films are discussed as an example of the presence of graded optical properties related to interfacial reactivity activated by processing conditions. Finally, the example of ZnO shows the potential of ellipsometry in discerning crystal and epitaxial film polarity through the analysis of spectra and the detection of surface reactivity of the two polar faces, i.e. Zn-polarity and O-polarity.

  16. Evaluation of gas-sensing properties of ZnO nanostructures electrochemically doped with Au nanophases

    Directory of Open Access Journals (Sweden)

    Elena Dilonardo

    2016-01-01

    Full Text Available A one-step electrochemical method based on sacrificial anode electrolysis (SAE was used to deposit stabilized gold nanoparticles (Au NPs directly on the surface of nanostructured ZnO powders, previously synthesized through a sol–gel process. The effect of thermal annealing temperatures (300 and 550 °C on chemical, morphological, and structural properties of pristine and Au-doped ZnO nancomposites (Au@ZnO was investigated. Transmission and scanning electron microscopy (TEM and SEM, as well as X-ray photoelectron spectroscopy (XPS, revealed the successful deposition of nanoscale gold on the surface of spherical and rod-like ZnO nanostructures, obtained after annealing at 300 and 550 °C, respectively. The pristine ZnO and Au@ZnO nanocomposites are proposed as active layer in chemiresistive gas sensors for low-cost processing. Gas-sensing measurements towards NO2 were collected at 300 °C, evaluating not only the Au-doping effect, but also the influence of the different ZnO nanostructures on the gas-sensing properties.

  17. On-chip surface modified nanostructured ZnO as functional pH sensors

    International Nuclear Information System (INIS)

    Zhang, Qing; Liu, Wenpeng; Sun, Chongling; Zhang, Hao; Pang, Wei; Zhang, Daihua; Duan, Xuexin

    2015-01-01

    Zinc oxide (ZnO) nanostructures are promising candidates as electronic components for biological and chemical applications. In this study, ZnO ultra-fine nanowire (NW) and nanoflake (NF) hybrid structures have been prepared by Au-assisted chemical vapor deposition (CVD) under ambient pressure. Their surface morphology, lattice structures, and crystal orientation were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). Two types of ZnO nanostructures were successfully integrated as gate electrodes in extended-gate field-effect transistors (EGFETs). Due to the amphoteric properties of ZnO, such devices function as pH sensors. We found that the ultra-fine NWs, which were more than 50 μm in length and less than 100 nm in diameter, performed better in the pH sensing process than NW–NF hybrid structures because of their higher surface-to-volume ratio, considering the Nernst equation and the Gouy–Chapman–Stern model. Furthermore, the surface coating of (3-Aminopropyl)triethoxysilane (APTES) protects ZnO nanostructures in both acidic and alkaline environments, thus enhancing the device stability and extending its pH sensing dynamic range. (paper)

  18. Structural and photovoltaic characteristics of hierarchical ZnO nanostructures electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Saleem, Muhammad, E-mail: saleem.malikape@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400044 (China); Fang, L. [Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing 400044 (China); Shaukat, Saleem F.; Ahmad, M. Ashfaq [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Raza, Rizwan, E-mail: razahussaini786@gmail.com [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Akhtar, Majid Niaz; Jamil, Ayesha; Aslam, Samia [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Abbas, Ghazanfar [Department of Physics, COMSATS Institute of Information Technology, Islamabad 44000 (Pakistan)

    2015-04-15

    Highlights: • Hierarchically ZnO nanostructures electrodes were grown using hot plate magnetic stirring at different growth reaction temperature. • We have investigated the effect of working temperature of 160°, 170°, 180°, and 190° on the growth mechanism of nanospheres and on the power conversion efficiency of DSSCs. • ZnO nanospheres with perfect aggregation show superior power conversion efficiency of 1.24% which is about 83% higher than nanoparticles DSSC. • An obvious vogue is that the overall power conversion efficiency decreases as the degree of the spherical aggregation is gradually destroyed. - Abstract: Structural and photovoltaic characteristics of hierarchical ZnO nanostructures solar cell have been studied in relation to growth reaction temperature. It is found that the hierarchical ZnO nanostructures network to act not only as large surface area substrates but also as a transport medium for electrons injected from the dye molecules. The incident photon-to-current conversion efficiency is decreased by increasing the growth reaction temperature of ZnO electrodes. The best conversion efficiency of a 0.25 cm{sup 2} cell is measured to be 1.24% under 100 mW cm{sup −2} irradiation.

  19. Structural and photovoltaic characteristics of hierarchical ZnO nanostructures electrodes

    International Nuclear Information System (INIS)

    Saleem, Muhammad; Fang, L.; Shaukat, Saleem F.; Ahmad, M. Ashfaq; Raza, Rizwan; Akhtar, Majid Niaz; Jamil, Ayesha; Aslam, Samia; Abbas, Ghazanfar

    2015-01-01

    Highlights: • Hierarchically ZnO nanostructures electrodes were grown using hot plate magnetic stirring at different growth reaction temperature. • We have investigated the effect of working temperature of 160°, 170°, 180°, and 190° on the growth mechanism of nanospheres and on the power conversion efficiency of DSSCs. • ZnO nanospheres with perfect aggregation show superior power conversion efficiency of 1.24% which is about 83% higher than nanoparticles DSSC. • An obvious vogue is that the overall power conversion efficiency decreases as the degree of the spherical aggregation is gradually destroyed. - Abstract: Structural and photovoltaic characteristics of hierarchical ZnO nanostructures solar cell have been studied in relation to growth reaction temperature. It is found that the hierarchical ZnO nanostructures network to act not only as large surface area substrates but also as a transport medium for electrons injected from the dye molecules. The incident photon-to-current conversion efficiency is decreased by increasing the growth reaction temperature of ZnO electrodes. The best conversion efficiency of a 0.25 cm 2 cell is measured to be 1.24% under 100 mW cm −2 irradiation

  20. Ultrasonic vibration imposed on nanoparticle-based ZnO film improves the performance of the ensuing perovskite solar cell

    Science.gov (United States)

    Miao, Yihe; Du, Peng; Wang, Zhiyu; Chen, Qianli; Eslamian, Morteza

    2018-02-01

    This work focuses on the development of nearly annealing-free ZnO-based perovskite solar cells (PSCs), suitable for low-cost manufacturing of PSCs on flexible substrates. To this end, thin film of ZnO nanoparticles is employed as the electron transporting layer (ETL), because of its low-temperature solution-processability and high electron mobility. In order to remove the structural and surface defects, ultrasonic vibration is imposed on the substrate of the as-spun wet ZnO films for a short duration of 3 min. It is shown that the ultrasonic excitation bridges the ZnO nanoparticles (cold sintering), and brings about significant improvement in the ZnO film nanostructure and functionality. In addition, ethyl acetate (EA), as an emerging volatile anti-solvent, is employed to deposit the methylammonium (MA) lead halide perovskite thin film atop the ZnO ETL, in order to prepare perovskite layers that only need an annealing time of 30 s. The ZnO-based PSCs, with a simple structure and free of additional treatments, except for the ultrasonic vibration, exhibit a promising performance with a power conversion efficiency (PCE) of over 11%, 40% higher than that of the control device. The ultrasonic vibration treatment is facile, low-cost, environmentally friendly, and compatible with the scalable coating and printing techniques, such as spray and blade coating.

  1. Influence Al doped ZnO nanostructure on structural and optical properties

    International Nuclear Information System (INIS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-01-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  2. Synthesis of ZnO comb-like nanostructures for high sensitivity H2S ...

    Indian Academy of Sciences (India)

    2017-09-15

    Sep 15, 2017 ... H2S gas sensor; ZnO comb-like nanostructures; chemical vapour deposition; vapour–solid growth; ... tube at a flow rate of 15 sccm, when the central temperature .... behaviour, in this case, under low input power implies ohmic.

  3. Life cycle assessment of facile microwave-assisted zinc oxide (ZnO) nanostructures

    CSIR Research Space (South Africa)

    Papadaki, D

    2017-05-01

    Full Text Available The life cycle assessment of several zinc oxide (ZnO) nanostructures, fabricated by a facile microwave technique, is presented. Key synthesis parameters such as annealing temperature, varied from 90 °C to 220 °C, and microwave power, varied from 110...

  4. Enhanced photocatalytic performance of ZnO nanostructures by electrochemical hybridization with graphene oxide

    Science.gov (United States)

    Pruna, A.; Wu, Z.; Zapien, J. A.; Li, Y. Y.; Ruotolo, A.

    2018-05-01

    Synthesis of zinc oxide (ZnO) nanostructures is reported by electrochemical deposition from an aqueous electrolyte in presence of graphene oxide (GO) with varying oxidation degree. The properties of hybrids were investigated by scanning electron microscopy, X-ray diffraction, Raman, Fourier-Transform Infrared and X-ray photoelectron spectroscopy techniques and photocatalytic measurements. The results indicated the electrodeposition of ZnO in presence of GO with increased oxygen content led to marked differences in the morphology while Raman measurements indicated an increased defect level both in the ZnO and the electrochemically reduced GO (ErGO) within the hybrids. The decrease in C/O atomic ratio of GO (from 0.79 to 0.71) employed for the electrodeposition of ZnO resulted in an increase in photocatalytic efficiency for methylene blue degradation under UV irradiation from 4-folds to 10-folds with respect to non-hybridized ZnO. The observed synergetic effect of cathodic deposition potential and oxygen content in GO towards improving the photocatalytic activity of immobilized ZnO is expected to contribute to further development of more effective deposition approaches for the preparation of high performance hybrid nanostructures.

  5. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  6. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  7. ZnO 1-D nanostructures: Low temperature synthesis and ...

    Indian Academy of Sciences (India)

    Wintec

    high-resolution transmission electron microscope (HRTEM;. JEOL 2010). ... low magnification image of the ZnO nanorod arrays show- ing uniformity of the .... in inverted nail like shape. .... where E (local) is the local electric field at the emitting.

  8. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    Energy Technology Data Exchange (ETDEWEB)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  9. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Jun [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of); Lee, Ho Seok [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Noh, Jin-Seo, E-mail: jinseonoh@gachon.ac.kr [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of)

    2016-03-31

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  10. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Kim, Yong Jun; Lee, Ho Seok; Noh, Jin-Seo

    2016-01-01

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  11. A novel low-temperature chemical solution route for straight and dendrite-like ZnO nanostructures

    International Nuclear Information System (INIS)

    Zhang Hui; Du Ning; Wu Jianbo; Ma, Xiangyang; Yang Deren; Zhang Xiaobin; Yang Zhiqing

    2007-01-01

    The straight and dendrite-like growths of ZnO have been completely and simply controlled by the status of ZnO seed instead of surfactant, template, oriented attachment, and ZnO buffer layer on the substrate in the chemical reaction synthesis of ZnO nanostructures. The monodisperse ZnO seeds, which are prepared by in situ quickly injecting the cool mixed zinc acetate and potassium hydrate ethanol solution into the hot matrix aqueous solution of zinc nitrate hydrate and diethylenetriamine at 95 deg. C, improve the straight growth and lots of uniform, straight, and single-crystalline ZnO nanorods with about 20-30 nm in diameter and 300 nm in length are achieved. While, the aggregated ZnO seeds, which are prepared by dropwise adding potassium hydrate ethanol solution into zinc acetate ethanol solution at 60 deg. C for 3 h, result in the dendrite-like growth and the bur-like ZnO nanostructures consisting of hundreds of nanorods with about 30-50 nm in diameter and several micrometers in length are formed. Furthermore, the approach presented here provides a simple, low-cost, environmental-friendly and high efficiency route to synthesize the high quality ZnO nanorods and bur-like ZnO nanostructures

  12. Antimicrobial nanostructured starch based films for packaging.

    Science.gov (United States)

    Abreu, Ana S; Oliveira, M; de Sá, Arsénio; Rodrigues, Rui M; Cerqueira, Miguel A; Vicente, António A; Machado, A V

    2015-09-20

    Montmorillonite modified with a quaternary ammonium salt C30B/starch nanocomposite (C30B/ST-NC), silver nanoparticles/starch nanocomposite (Ag-NPs/ST-NC) and both silver nanoparticles/C30B/starch nanocomposites (Ag-NPs/C30B/ST-NC) films were produced. The nanoclay (C30B) was dispersed in a starch solution using an ultrasonic probe. Different concentrations of Ag-NPs (0.3, 0.5, 0.8 and 1.0mM) were synthesized directly in starch and in clay/starch solutions via chemical reduction method. Dispersion of C30B silicate layers and Ag-NPs in ST films characterized by X-ray and scanning electron microscopy showed that the presence of Ag-NPs enhanced clay dispersion. Color and opacity measurements, barrier properties (water vapor and oxygen permeabilities), dynamic mechanical analysis and contact angle were evaluated and related with the incorporation of C30B and Ag-NPs. Films presented antimicrobial activity against Staphylococcus aureus, Escherichia coli and Candida albicans without significant differences between Ag-NPs concentrations. The migration of components from the nanostructured starch films, assessed by food contact tests, was minor and under the legal limits. These results indicated that the starch films incorporated with C30B and Ag-NPs have potential to be used as packaging nanostructured material. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. Nanostructured thin films as functional coatings

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  14. Doping effect on the optical properties of ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Stoehr, M. [Frederick Seitz Materials Research Laboratory, University of Illinois,104 South Goodwin Avenue, Urbana, IL 61801 (United States); Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Juillaguet, S. [Groupe d' Etude des Semi-conducteurs, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Kyaw, T.M.; Wen, J.G. [Institut Universitaire de Technologie, Universite de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse Cedex (France)

    2007-04-15

    High quality undoped and Ga{sub 2}O{sub 3} or In{sub 2}O{sub 3} doped ZnO nanostructures are grown by chemical vapor transport and condensation. The doping effect on the optical properties is investigated by photoluminescence. At room temperature, photoluminescence on Ga{sub 2}O{sub 3} doped ZnO nanostructures reveals an enhancement of the ultraviolet near band edge emission at 390 nm, while the intensity of the deep level emission at 530 nm weakens. At 5 K, an intense neutral-donor-bound exciton (D{sup 0}X) line dominates the undoped and doped ZnO photoluminescence spectra. The presence of well resolved two-electron satellite lines allow to determine the type of donors. At 5 K, the results indicate that ZnO nanostructures grown with 10% of Ga{sub 2}O{sub 3} display an excellent optical quality, proved by an intense D{sup 0}X line, a high intensity ratio between the D{sup 0}X line and the deep level emission as well as the presence of numerous phonon replicas of the main lines. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

  16. Glancing angle deposited Al-doped ZnO nanostructures with different structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yildiz, A., E-mail: yildizab@gmail.com [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences, Yıldırım Beyazıt University, Ankara (Turkey); Cansizoglu, H. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Turkoz, M. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Electrical-Electronic Engineering, Faculty of Engineering, University of Karabuk, Karabuk (Turkey); Abdulrahman, R.; Al-Hilo, Alaa; Cansizoglu, M.F.; Demirkan, T.M.; Karabacak, T. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2015-08-31

    Al-doped ZnO (AZO) nanostructure arrays with different shapes (tilted rods, vertical rods, spirals, and zigzags) were fabricated by utilizing glancing angle deposition (GLAD) technique in a DC sputter growth unit at room temperature. During GLAD, all the samples were tilted at an oblique angle of about 90° with respect to incoming flux direction. In order to vary the shapes of nanostructures, each sample was rotated at different speeds around the substrate normal axis. Rotation speed did not only affect the shape but also changed the microstructural and optical properties of GLAD AZO nanostructures. The experimental results reveal that GLAD AZO nanostructures of different shapes each have unique morphological, crystal structure, mechanical, and optical properties determined by scanning electron microscopy, X-ray diffraction, transmission, and reflectance measurements. Vertical nanorods display the largest grain size, minimum strain, lowest defect density, and highest optical transmittance compared to the other shapes. Growth dynamics of GLAD has been discussed to explain the dependence of structural and optical properties of nanostructures on the substrate rotation speed. - Highlights: • Al-doped ZnO (AZO) nanostructures with different shapes were fabricated. • They have unique morphological, crystal structure, and optical properties. • Vertical AZO nanorods show an enhanced optical transmittance.

  17. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  18. Effect of methanol ratio in mixed solvents on optical properties and wettability of ZnO films by cathodic electrodeposition

    International Nuclear Information System (INIS)

    Zhang, Miao; Xu, Kai; Jiang, Xishun; Yang, Lei; He, Gang; Song, Xueping; Sun, Zhaoqi; Lv, Jianguo

    2014-01-01

    Highlights: • Different surface morphologies of ZnO films were prepared by cathodic electrodeposition. • The surface morphologies are controlled through add different ratio methanol to electrolyte. • The morphology changes from nanorods with hexagonal structure to net-like nanostructure. • The wettability of films shows obvious change with increasing methanol ratio. • The maximum light-induced CA change has been observed with the methanol ratio of 0.8. - Abstract: ZnO thin films were prepared in the electrolyte with different methanol ratio by cathodic electrodeposition method. Microstructure, surface morphology, optical properties and wettability of the thin films were investigated by X-ray diffractometer, field-emission scanning electron microscope, ultraviolet–visible spectroscope, fluorescence spectrometer and water contact angle apparatus. Increase of methanol ratio in the solvents may restrain the (0 0 2) plane preferential orientation in some extent. Change of current density curves with the ratio of methanol in the solution play a vital role on electrochemical reaction kinetics, microstructure and/or surface morphology of ZnO thin films. With the methanol ratio increase from 0 to 0.8, the surface morphology changes from nanorods to net-like nanostructure. The adsorbed NO 3 − ions on the polar planes hinder the crystal growth along the c-axis and redirect the growth direction along the nonpolar planes. The maximum and minimum band gaps have been obtained in the ZnO thin films with the methanol ratio of 0.4 and 0.6, respectively. Change of contact angle before UV irradiation may be related to surface morphology and oxygen vacancies. The maximum light-induced water contact angle change has been observed in the sample with the methanol ratio of 0.8. The results may be attributed to the higher surface roughness and net-like morphology

  19. Effect of methanol ratio in mixed solvents on optical properties and wettability of ZnO films by cathodic electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao; Xu, Kai; Jiang, Xishun; Yang, Lei; He, Gang; Song, Xueping [School of Physics and Material Science, Anhui University, Hefei 230601 (China); Sun, Zhaoqi, E-mail: szq@ahu.edu.cn [School of Physics and Material Science, Anhui University, Hefei 230601 (China); Lv, Jianguo, E-mail: lvjg1@163.com [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China)

    2014-12-05

    Highlights: • Different surface morphologies of ZnO films were prepared by cathodic electrodeposition. • The surface morphologies are controlled through add different ratio methanol to electrolyte. • The morphology changes from nanorods with hexagonal structure to net-like nanostructure. • The wettability of films shows obvious change with increasing methanol ratio. • The maximum light-induced CA change has been observed with the methanol ratio of 0.8. - Abstract: ZnO thin films were prepared in the electrolyte with different methanol ratio by cathodic electrodeposition method. Microstructure, surface morphology, optical properties and wettability of the thin films were investigated by X-ray diffractometer, field-emission scanning electron microscope, ultraviolet–visible spectroscope, fluorescence spectrometer and water contact angle apparatus. Increase of methanol ratio in the solvents may restrain the (0 0 2) plane preferential orientation in some extent. Change of current density curves with the ratio of methanol in the solution play a vital role on electrochemical reaction kinetics, microstructure and/or surface morphology of ZnO thin films. With the methanol ratio increase from 0 to 0.8, the surface morphology changes from nanorods to net-like nanostructure. The adsorbed NO{sub 3}{sup −} ions on the polar planes hinder the crystal growth along the c-axis and redirect the growth direction along the nonpolar planes. The maximum and minimum band gaps have been obtained in the ZnO thin films with the methanol ratio of 0.4 and 0.6, respectively. Change of contact angle before UV irradiation may be related to surface morphology and oxygen vacancies. The maximum light-induced water contact angle change has been observed in the sample with the methanol ratio of 0.8. The results may be attributed to the higher surface roughness and net-like morphology.

  20. Facile Hydrothermal Preparation of ZNO/CO3O4 Heterogeneous Nanostructures and its Photovoltaic Effect

    Science.gov (United States)

    Wei, Fanan; Jiang, Minlin; Liu, Lianqing

    2015-07-01

    Photovoltaic technology offers great potential in the replacement of fossil fuel resources, but still suffers from high device fabrication cost. Herein, we attempted to provide a solution to these issues with heterogeneous nanostructures. Firstly, Zinc oxide (ZnO)/cobalt oxide (Co3O4) heterojunction nanowires are prepared through facile fabrication methods. By assembling Co(OH)2 nanoplates on ZnO nanowire arrays, the ZnO/Co3O4 heterogeneous nanostructures are uniformly synthesized on ITO coated glass and wafer. Current (I)-voltage (V) measurement through conductive atomic force microscope shows excellent photovoltaic effect. And, the heterojunction nanostructures shows unprecedented high open circuit voltage. Therefore, the potential application of the heterogeneous nanostructures in solar cells is demonstrated.

  1. Synthesis and characterization of ZnO nanostructures with varying ...

    Indian Academy of Sciences (India)

    2017-05-13

    May 13, 2017 ... Composition of the reactant solution, pH and temperature ... due to the broad spectrum of UV radiation absorption, supe- ... In addition, ZnO is very useful to cure various other skin ... be used as promising candidate for coating of orthopedic ... tape and then coated with gold for 40 s in an auto-fine coater.

  2. Detailed microstructure analysis of as-deposited and etched porous ZnO films

    International Nuclear Information System (INIS)

    Shang, Congcong; Thimont, Yohann; Barnabé, Antoine; Presmanes, Lionel; Pasquet, Isabelle; Tailhades, Philippe

    2015-01-01

    Graphical abstract: - Highlights: • Porous ZnO thin films were deposited by rf magnetron sputtering. • Surface enhancement factors were deduced from geometrical considerations. • Enlargement of the inter-grain spaces have been achieved by HCl chemical etching. • Microstructural parameters were deduced from SEM, AFM and optical measurements. - Abstract: ZnO nanostructured materials in thin film forms are of particular interest for photovoltaic or photocatalysis processes but they suffer from a lack of simple methods for optimizing their microstructure. We have demonstrated that microporous ZnO thin films with optimized inter grain accessibility can be produce by radio frequency magnetron sputtering process and chemical etching with 2.75 mM HCl solution for different duration. The as-deposited ZnO thin films were first characterized in terms of structure, grain size, inter grain space, open cavity depth and total thickness of the film by XRD, AFM, SEM, profilometry and optical measurements. A specific attention was dedicated to the determination of the surface enhancement factor (SEF) by using basic geometrical considerations and images treatments. In addition, the porous fraction and its distribution in the thickness have been estimated thanks to the optical simulation of the experimental UV–Visible–IR spectrums using the Bruggeman dielectric model and cross section SEM images analysis respectively. This study showed that the microstructure of the as-deposited films consists of a dense layer covered by a porous upper layer developing a SEF of 12–13 m 2 m −2 . This two layers architecture is not modified by the etching process. The etching process only affects the upper porous layer in which the overall porosity and the inter-grain space increase with the etching duration. Column diameter and total film thickness decrease at the same time when the films are soaked in the HCl bath. The microporous structure obtained after the etching process could

  3. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Martinez-Miranda, L. J. [University of Maryland, Department of Materials and Nuclear Engineering, College Park, Maryland 20742 (United States); Barbour, J. C. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2000-04-15

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetics and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of three- and four-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetics of PLD growth results in films becoming more ''diamondlike,'' i.e., increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film. (c) 2000 The American Physical Society.

  4. UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

    Science.gov (United States)

    Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

    2017-12-26

    ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

  5. Enhanced ultraviolet photo-response in Dy doped ZnO thin film

    Science.gov (United States)

    Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

    2018-02-01

    In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

  6. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  7. Vibrational Order, Structural Properties, and Optical Gap of ZnO Nanostructures Sintered through Thermal Decomposition

    Directory of Open Access Journals (Sweden)

    Alejandra Londono-Calderon

    2014-01-01

    Full Text Available The sintering of different ZnO nanostructures by the thermal decomposition of zinc acetate is reported. Morphological changes from nanorods to nanoparticles are exhibited with the increase of the decomposition temperature from 300 to 500°C. The material showed a loss in the crystalline order with the increase in the temperature, which is correlated to the loss of oxygen due to the low heating rate used. Nanoparticles have a greater vibrational freedom than nanorods which is demonstrated in the rise of the main Raman mode E 2(high during the transformation. The energy band gap of the nanostructured material is lower than the ZnO bulk material and decreases with the rise in the temperature.

  8. Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Marta M., E-mail: martamalves@tecnico.ulisboa.pt [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); Santos, Catarina F.; Carmezim, Maria J. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); EST Setúbal, DEM, Instituto Politécnico de Setúbal, Campus IPS, 2910 Setúbal (Portugal); Montemor, Maria F. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal)

    2015-03-30

    Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO{sub 3}){sub 2} aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices.

  9. Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

    International Nuclear Information System (INIS)

    Alves, Marta M.; Santos, Catarina F.; Carmezim, Maria J.; Montemor, Maria F.

    2015-01-01

    Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO 3 ) 2 aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices

  10. High electro-catalytic activities of glucose oxidase embedded one-dimensional ZnO nanostructures

    International Nuclear Information System (INIS)

    Sarkar, Nirmal K; Bhattacharyya, Swapan K

    2013-01-01

    One-dimensional ZnO nanorods and nanowires are separately synthesized on Zn substrate by simple hydrothermal processes at low temperatures. Electro-catalytic responses of glucose oxidase/ZnO/Zn electrodes using these two synthesized nanostructures of ZnO are reported and compared with others available in literature. It is apparent the Michaelis–Menten constant, K M app , for the present ZnO nanowire, having a greater aspect ratio, is found to be the lowest when compared with others. This sensor shows lower oxidation peak potential with a long detection range of 6.6 μM–380 mM and the highest sensitivity of ∼35.1 μA cm −2 mM −1 , among the reported values in the literature. Enzyme catalytic efficiency and turnover numbers are also found to be remarkably high. (paper)

  11. Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

    Science.gov (United States)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2017-05-01

    ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

  12. Nanostructured carbon films with oriented graphitic planes

    International Nuclear Information System (INIS)

    Teo, E. H. T.; Kalish, R.; Kulik, J.; Kauffmann, Y.; Lifshitz, Y.

    2011-01-01

    Nanostructured carbon films with oriented graphitic planes can be deposited by applying energetic carbon bombardment. The present work shows the possibility of structuring graphitic planes perpendicular to the substrate in following two distinct ways: (i) applying sufficiently large carbon energies for deposition at room temperature (E>10 keV), (ii) utilizing much lower energies for deposition at elevated substrate temperatures (T>200 deg. C). High resolution transmission electron microscopy is used to probe the graphitic planes. The alignment achieved at elevated temperatures does not depend on the deposition angle. The data provides insight into the mechanisms leading to the growth of oriented graphitic planes under different conditions.

  13. Radiation damage in nanostructured metallic films

    Science.gov (United States)

    Yu, Kaiyuan

    High energy neutron and charged particle radiation cause microstructural and mechanical degradation in structural metals and alloys, such as phase segregation, void swelling, embrittlement and creep. Radiation induced damages typically limit nuclear materials to a lifetime of about 40 years. Next generation nuclear reactors require materials that can sustain over 60 - 80 years. Therefore it is of great significance to explore new materials with better radiation resistance, to design metals with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe. Such systems obtain high volume fraction of boundaries, which are considered sinks to radiation induced defects. From the viewpoint of nanomechanics, it is of interest to investigate the plastic deformation mechanisms of nanostructured films, which typically show strong size dependence. By controlling the feature size (layer thickness, twin spacing and grain size), it is applicable to picture a deformation mechanism map which also provides prerequisite information for subsequent radiation hardening study. And from the viewpoint of radiation effects, it is of interest to explore the fundamentals of radiation response, to examine the microstructural and mechanical variations of irradiated nanometals and to enrich the design database. More importantly, with the assistance of in situ techniques, it is appealing to examine the defect generation, evolution, annihilation, absorption and interaction with internal interfaces (layer interfaces, twin boundaries and grain boundaries). Moreover, well-designed nanostructures can also verify the speculation that radiation induced defect density and hardening show clear size dependence. The focus of this thesis lies in the radiation response of Ag/Ni multilayers and nanotwinned Ag

  14. Mechanism and Growth of Flexible ZnO Nanostructure Arrays in a Facile Controlled Way

    Directory of Open Access Journals (Sweden)

    Yangping Sheng

    2011-01-01

    Full Text Available Nanostructure arrays-based flexible devices have revolutionary impacts on the application of traditional semiconductor devices. Here, a one-step method to synthesize flexible ZnO nanostructure arrays on Zn-plated flexible substrate in Zn(NO32/NH3⋅H2O solution system at 70–90∘C was developed. We found out that the decomposition of Zn(OH2 precipitations, formed in lower NH3⋅H2O concentration, in the bulk solution facilitates the formation of flower-like structure. In higher temperature, 90∘C, ZnO nanoplate arrays were synthesized by the hydrolysis of zinc hydroxide. Highly dense ZnO nanoparticale layer formed by the reaction of NH3⋅H2O with Zn plating layer in the initial self-seed process could improve the vertical alignment of the nanowires arrays. The diameter of ZnO nanowire arrays, from 200 nm to 60 nm, could be effectively controlled by changing the stability of Zn(NH342+ complex ions by varying the ratio of Zn(NO32 to NH3⋅H2O which further influence the release rate of Zn2+ ions. This is also conformed by different amounts of the Zn vacancy as determined by different UV emissions of the PL spectra in the range of 380–403 nm.

  15. Strain modulated defect luminescence in ZnO nanostructures grown on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hung-Ing; Hsiao, Jui-Ju; Huang, Yi-Jen; Wang, Jen-Cheng [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China); Wu, Ya-Fen [Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei 243, Taiwan, ROC (China); Lu, Bing-Yuh [Department of Electrical Engineering, Tun Gnan University, Shenkeng, New Taipei 222, Taiwan, ROC (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China)

    2015-12-15

    The strain modulated defect green luminescence from ZnO nanostructures grown on silicon substrates has been investigated in-depth. According to the Warren–Averbach Fourier analysis of the X-ray diffraction profiles, both the internal strain and the average crystallite size of the well-ordered nano-size ZnO nanostructures could be subtly modulated by careful adjustment of the aqueous solution of zinc nitrate (Zn(NO{sub 3}){sub 2}) and ammonium hydroxide (NH{sub 3}OH) used in the hydrothermal treatment. Visible defect-related and ultraviolet band-to-band emissions were characterized using temperature-dependent photoluminescence measurements over a broad temperature range from 20 to 300 K. It was found that the thermal-related tensile strain led to the blueshift of the green emission with increasing temperature, while the violet and ultraviolet emissions were thermally insensitive. These spectral observations were substantially corroborated by the deformation potential theory. - Highlights: • The strain modulated defect green luminescence from ZnO nanostructures. • Visible and ultraviolet emissions were characterized using photoluminescence. • The tensile strain led to the blueshift of the green emission. • The spectral observations were corroborated by the deformation potential theory.

  16. Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

    Science.gov (United States)

    Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

    2018-04-01

    We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

  17. Highly coercive thin-film nanostructures

    International Nuclear Information System (INIS)

    Zhou, J.; Skomski, R.; Kashyap, A.; Sorge, K.D.; Sui, Y.; Daniil, M.; Gao, L.; Yan, M.L.; Liou, S.-H.; Kirby, R.D.; Sellmyer, D.J.

    2005-01-01

    The processing, structure, and magnetism of highly coercive Sm-Co and FePt thin-film nanostructures are investigated. The structures include 1:5 based Sm-Co-Cu-Ti magnets, particulate FePt:C thin films, and FePt nanotubes. As in other systems, the coercivity depends on texture and imperfections, but there are some additional features. A specific coercivity mechanism in particulate media is a discrete pinning mode intermediate between Stoner-Wohlfarth rotation and ordinary domain-wall pinning. This mechanism yields a coercivity maximum for intermediate intergranular exchange and explains the occurrence of coercivities of 5 T in particulate Sm-Co-Cu-Ti magnets

  18. Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties

    Energy Technology Data Exchange (ETDEWEB)

    Yayapao, Oranuch [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Titipun, E-mail: ttpthongtem@yahoo.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Phuruangrat, Anukorn, E-mail: phuruangrat@hotmail.com [Department of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112 (Thailand); Thongtem, Somchai [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2013-11-05

    Highlights: •Undoped and Dy-doped ZnO used as photocatalysts. •They were synthesized by sonochemistry. •The promising materials for treatment of organic pollutants. -- Abstract: Dy-doped ZnO nanostructures were synthesized by a sonochemical method. The concentration effect of Dy on their phase, morphology, optical properties and photocatalytic activities was investigated. XRD patterns indicated that the as-synthesized 0–3% Dy-doped ZnO was hexagonal wurtzite structure. SEM and TEM show that the products were nanorods with their growth direction along the c axis. The photoluminescence spectrum of 3% Dy-doped ZnO, applied by Gaussian analysis, consists of three emission peaks at 376 nm, 448 nm and 487 nm. The photocatalytic activities of the as-synthesized products were determined from the degradation of methylene blue (C{sub 16}H{sub 18}N{sub 3}SCl) by UV radiation. In this research, the 3% Dy-doped ZnO showed the highest photocatalytic activity.

  19. Sonochemical synthesis of Dy-doped ZnO nanostructures and their photocatalytic properties

    International Nuclear Information System (INIS)

    Yayapao, Oranuch; Thongtem, Titipun; Phuruangrat, Anukorn; Thongtem, Somchai

    2013-01-01

    Highlights: •Undoped and Dy-doped ZnO used as photocatalysts. •They were synthesized by sonochemistry. •The promising materials for treatment of organic pollutants. -- Abstract: Dy-doped ZnO nanostructures were synthesized by a sonochemical method. The concentration effect of Dy on their phase, morphology, optical properties and photocatalytic activities was investigated. XRD patterns indicated that the as-synthesized 0–3% Dy-doped ZnO was hexagonal wurtzite structure. SEM and TEM show that the products were nanorods with their growth direction along the c axis. The photoluminescence spectrum of 3% Dy-doped ZnO, applied by Gaussian analysis, consists of three emission peaks at 376 nm, 448 nm and 487 nm. The photocatalytic activities of the as-synthesized products were determined from the degradation of methylene blue (C 16 H 18 N 3 SCl) by UV radiation. In this research, the 3% Dy-doped ZnO showed the highest photocatalytic activity

  20. Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

    Science.gov (United States)

    Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2012-02-01

    ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

  1. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  2. Growth of Comb-like ZnO Nanostructures for Dye-sensitized Solar Cells Applications

    Directory of Open Access Journals (Sweden)

    Umar Ahmad

    2009-01-01

    Full Text Available Abstract Dye-sensitized solar cells (DSSCs were fabricated by using well-crystallized ZnO nanocombs directly grown onto the fluorine-doped tin oxide (FTO via noncatalytic thermal evaporation process. The thin films of as-grown ZnO nanocombs were used as photoanode materials to fabricate the DSSCs, which exhibited an overall light to electricity conversion efficiency of 0.68% with a fill factor of 34%, short-circuit current of 3.14 mA/cm2, and open-circuit voltage of 0.671 V. To the best of our knowledge, this is first report in which thin film of ZnO nanocombs was used as photoanode materials to fabricate the DSSCs.

  3. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.

    2017-03-10

    Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

  4. Microwave-assisted synthesis of C-doped TiO2 and ZnO hybrid nanostructured materials as quantum-dots sensitized solar cells

    Science.gov (United States)

    Rangel-Mendez, Jose R.; Matos, Juan; Cházaro-Ruiz, Luis F.; González-Castillo, Ana C.; Barrios-Yáñez, Guillermo

    2018-03-01

    The microwave-assisted solvothermal synthesis of C-doped TiO2 and ZnO hybrid materials was performed. Saccharose, titanium isopropoxide and zinc acetate were used as organic and inorganic sources for the synthesis. The influence of temperature and reaction time on the textural and optoelectronic properties of the hybrid materials was verified. Carbon quantum-dots of TiO2 and ZnO nanostructured spheres were obtained in a second pot by controlled calcination steps of the precursor hybrid materials. A carefully characterization by adsorption-desorption N2 isotherms, XRD, XPS, SEM, UV-vis/DR and electro- and photo-electrochemistry properties of the carbon quantum-dots TiO2 and ZnO spheres was performed. The photoelectrochemical activity of TiO2-C and ZnO-C films proved to be dependent on the conditions of synthesis. It was found a red-shift in the energy band gap of the semiconductors with values of 3.02 eV and 3.13 eV for the TiO2-C and ZnO-C, respectively, clearly lower than those on bare semiconductors, which is associated with the C-doping effect. From the photo-electrochemistry characterization of C-doped TiO2 and ZnO films can be concluded that the present materials have potential applications as photoelectrodes for quantum-dots sensitized solar cells.

  5. Synthesis of Cu Doped ZnO Nanostructures for Ultra Violet Sensing

    Directory of Open Access Journals (Sweden)

    Nazar Abbas SHAH

    2015-03-01

    Full Text Available This paper mainly focused on the synthesis of zinc oxide nanostructures, their characterization and their ultra violet light sensing response at room temperature. Nanowires, nanobelts and nanosheets were synthesized by varying doping material copper by using vapor transport technique governed by the vapor-liquid-solid or vapor-solid mechanisms. The structural, morphological and optical characterization was carried out using X-ray diffraction, scanning electron microscopy, energy dispersive X-Ray and ultra violet visible spectroscopy techniques. Finally the ultra violet light sensing response of these nanostructures was observed by using Keithley meter. The high ultra violet photosensitivity and fast response time justifies the effective utilization of these ZnO nanostructures as ultra violet sensors in different areas.

  6. Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

    Energy Technology Data Exchange (ETDEWEB)

    Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reeja-Jayan, B. [Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States); De la Rosa, E. [Centro de Investigacion en Optica, Loma del Bosque 115 Col. Lomas del Campestre C.P. 37150 Leon, Gto. Mexico (Mexico); Ortiz-Mendez, U. [Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico); Reyes-Betanzo, C. [Instituto Nacional de Astrofisica Optica y Electronica, Calle Luis Enrique Erro No. 1, Santa Maria Tonanzintla, Puebla. Apdo. Postal 51 y 216, C.P. 72000 Puebla (Mexico); Cruz-Silva, R. [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001, Col. Chamilpa, CP 62210 Cuernavaca, Mor. (Mexico); Jose-Yacaman, M. [Physics and Astronomy Department University of Texas at San Antonio 1604 campus San Antonio, TX 78249 (United States)

    2010-03-15

    In this work patterned ZnO films were prepared at room-temperature by deposition of {approx}5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation ({lambda} = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

  7. Efficient solution route to transparent ZnO semiconductor films using colloidal nanocrystals

    Directory of Open Access Journals (Sweden)

    Satoshi Suehiro

    2016-09-01

    Full Text Available ZnO nanocrystals (NCs were synthesized by heating Zn (II acetylacetonate in oleic acid/oleylamine in the presence of 1,2-hexadecanediol at 220 °C. Transmission electron microscopy (TEM and dynamic light scattering (DLS measurements revealed the formation of monodispersed ZnO NCs of ca. 7 nm. ZnO NC assembled films were fabricated on a glass substrate by deposition with the colloidal ZnO NCs dispersed in toluene. The film composed of the NCs showed good optical transparency in the visible to near-infrared region. A device coupling the ZnO NC film with a p-type Cu2ZnSnS4 (CZTS NC film exhibited an obvious diode-like current–voltage behavior. The results suggest that the transparent ZnO film has a potentiality to be used for an n-type window layer in some optoelectronic applications.

  8. Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography

    International Nuclear Information System (INIS)

    Sepulveda-Guzman, S.; Reeja-Jayan, B.; De la Rosa, E.; Ortiz-Mendez, U.; Reyes-Betanzo, C.; Cruz-Silva, R.; Jose-Yacaman, M.

    2010-01-01

    In this work patterned ZnO films were prepared at room-temperature by deposition of ∼5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation (λ = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.

  9. Stress reduction in tungsten films using nanostructured compliant layers

    International Nuclear Information System (INIS)

    Karabacak, Tansel; Picu, Catalin R.; Senkevich, Jay J.; Wang, G.-C.; Lu, T.-M.

    2004-01-01

    The residual stress in thin films is a major limiting factor for obtaining high quality films. We present a strategy for stress reduction in sputter deposited films by using a nanostructured compliant layer obtained by the oblique angle deposition technique, sandwiched between the film and the substrate. The technique is all in situ, does not require any lithography steps, and the nanostructured layer is made from the same material as the deposited thin film. By using this approach we were able to reduce stress values by approximately one order of magnitude in sputter deposited tungsten films. These lower stress thin films also exhibit stronger adhesion to the substrate, which retards delamination buckling. This technique allows the growth of much thicker films and has enhanced structural stability. A model is developed to explain the stress relief mechanism and the stronger adhesion associated with the presence of the nanostructured compliant layer

  10. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  11. Improved luminescence intensity and stability of thermal annealed ZnO incorporated Alq3 composite films.

    Science.gov (United States)

    Cuba, M; Muralidharan, G

    2015-11-01

    The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.

  12. An Optoelectronic Sensor Configuration Using ZnO Thick Film for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Shobhna DIXIT

    2007-08-01

    Full Text Available In the present paper sensitivity of a nanocrystalline ZnO thick film to methanol vapors is reported. The sensing mechanism is the modulation in the intensity of light reflected from glass film interface. Modulation occurs due to the change in refractive index of ZnO film upon adsorption of vapor molecules. The film has been characterized by XRD, SEM, and optical transmission studies. XRD pattern reveals polycrystalline structure of the film with grain size 33.5 nm.

  13. Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals

    International Nuclear Information System (INIS)

    Balucani, M.; Nenzi, P.; Chubenko, E.; Klyshko, A.; Bondarenko, V.

    2011-01-01

    This article presents the study of the electrochemical deposition of zinc oxide from the non-aqueous solution based on dimethyl sulfoxide and zinc chloride into the porous silicon matrix. The features of the deposition process depending on the thickness of the porous silicon layer are presented. It is shown that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a diameter of 10–50 nm. The electrochemically deposited zinc oxide layers on top of porous silicon are shown to have a crystalline structure. It is also shown that zinc oxide crystals formed by hydrothermal method on the surface of electrochemically deposited zinc oxide film demonstrate ultra-violet luminescence. The effect of the porous silicon layer thickness on the morphology of the zinc oxide is shown. The structures obtained demonstrated two luminescence bands peaking at the 375 and 600 nm wavelengths. Possible applications of ZnO nanostructures, porous and continuous polycrystalline ZnO films such as gas sensors, light-emitting diodes, photovoltaic devices, and nanopiezo energy generators are considered. Aspects of integration with conventional silicon technology are also discussed.

  14. Role of Fe doping on structural and vibrational properties of ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyarajan, T.; Udayabhaskar, R.; Karthikeyan, B. [National Institute of Technology, Department of Physics, Tiruchirappalli (India)

    2012-05-15

    In this report, Raman and Fourier Transform Infrared (FTIR) measurements were carried out to study the phonon modes of pure and Fe doped ZnO nanoparticles. The nanoparticles were prepared by sol-gel technique at room temperature. The X-ray diffraction measurements reveal that the nanoparticles are in hexagonal wurtzite structure and doping makes the shrinkage of the lattice parameters, whereas there is no alteration in the unit cell. Raman measurements show both E{sub 2}{sup low} and E{sub 2}{sup High} optical phonon mode is shifted towards lower wave number with Fe incorporation and explained on the basis of force constant variation, stress measurements, respectively. In addition, Fe related local vibrational modes (LVM) were observed for higher concentration of Fe doping. FTIR spectra reveal a band at 444 cm{sup -1} which is specific to E{sub 1} (TO) mode; a red-shift of this mode in Fe doped samples and some surface phonon modes were observed. Furthermore, the observation of additional IR modes, which is considered to have an origin related to Fe dopant in the ZnO nanostructures, is also reported. These additional mode features can be regarded as an indicator for the incorporation of Fe ions into the lattice position of the ZnO nanostructures. (orig.)

  15. Nanostructured thin film coatings with different strengthening effects

    Directory of Open Access Journals (Sweden)

    Panfilov Yury

    2017-01-01

    Full Text Available A number of articles on strengthening thin film coatings were analyzed and a lot of unusual strengthening effects, such as super high hardness and plasticity simultaneously, ultra low friction coefficient, high wear-resistance, curve rigidity increasing of drills with small diameter, associated with process formation of nanostructured coatings by the different thin film deposition methods were detected. Vacuum coater with RF magnetron sputtering system and ion-beam source and arc evaporator for nanostructured thin film coating manufacture are represented. Diamond Like Carbon and MoS2 thin film coatings, Ti, Al, Nb, Cr, nitride, carbide, and carbo-nitride thin film materials are described as strengthening coatings.

  16. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  17. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    Directory of Open Access Journals (Sweden)

    Deepu Thomas

    2014-01-01

    Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

  18. Enhanced local piezoelectric response in the erbium-doped ZnO nanostructures prepared by wet chemical synthesis

    Directory of Open Access Journals (Sweden)

    Reza Zamiri

    2017-03-01

    Full Text Available Pure and erbium (Er doped ZnO nanostructures were prepared by simple and cost effective wet chemical precipitation method. The successful doping with phase purity of prepared ZnO nanostructure was confirmed by X-ray diffraction (XRD and their Rietveld analysis. The change in structural morphology of nanoscale features of prepared ZnO nanopowders on Er doping was observed from their scanning electron microscopy (SEM images. The presence of Er in prepared ZnO nanopowder was further confirmed from corresponding energy dispersive X-ray spectroscopy (EDX spectra of scanned SEM images. Piezoelectric properties of before (green samples and after sintering of consolidated compact of synthesized nanopowders were successfully measured. The out-of-plane (effective longitudinal and in-plane (effective shear coefficients of the samples were estimated from the local piezoresponse.

  19. Enhanced Photocatalytic Activity of Rare Earth Metal (Nd and Gd doped ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    P. Logamani

    2017-06-01

    Full Text Available Presence of harmful organic pollutants in wastewater effluents causes serious environmental problems and therefore purification of this contaminated water by a cost effective treatment method is one of the most important issue which is in urgent need of scientific research. One such promising treatment technique uses semiconductor photocatalyst for the reduction of recalcitrant pollutants in water. In the present work, rare earth metals (Nd and Gd doped ZnO nanostructured photocatalyst have been synthesized by wet chemical method. The prepared samples were characterized by X-ray diffraction (XRD, Field Emission Scanning Electron Microscopy (FESEM and energy dispersive X-ray spectroscopy (EDS. The XRD results showed that the prepared samples were well crystalline with hexagonal Wurtzite structure. The results of EDS revealed that rare earth elements were doped into ZnO structure. The effect of rare earth dopant on morphology and photocatalytic degradation properties of the prepared samples were studied and discussed. The results revealed that the rare earth metal doped ZnO samples showed enhanced visible light photocatalytic activity for the degradation of methylene blue dye than pure nano ZnO photocatalyst.

  20. Role of VI/II ratio on the growth of ZnO nanostructures using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N., E-mail: zelalem.urgessa@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Botha, J.R. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    In this paper the growth process and morphological evolution of ZnO nanostructures were investigated in a series of experiments using chemical bath deposition. The experimental results indicate that the morphological evolution depends on the reaction conditions, particularly on OH{sup -} to Zn{sup 2+} ratio (which directly affects the pH). For low VI/II ratios, quasi-spherical nanoparticles of an average diameter 30 nm are obtained, whereas for larger VI/II ratios, nanorods with an average diameter less than 100 nm are produced, which indicates that by systematically controlling the VI/II ratio, it is possible to produce different shapes and sizes of ZnO nanostructures. A possible mechanism for the nanostructural change of the as-synthesized ZnO from particle to rod was elucidated based on the relative densities of H{sup +} and OH{sup -} in the solution.

  1. Role of VI/II ratio on the growth of ZnO nanostructures using chemical bath deposition

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Oluwafemi, O.S.; Botha, J.R.

    2012-01-01

    In this paper the growth process and morphological evolution of ZnO nanostructures were investigated in a series of experiments using chemical bath deposition. The experimental results indicate that the morphological evolution depends on the reaction conditions, particularly on OH − to Zn 2+ ratio (which directly affects the pH). For low VI/II ratios, quasi-spherical nanoparticles of an average diameter 30 nm are obtained, whereas for larger VI/II ratios, nanorods with an average diameter less than 100 nm are produced, which indicates that by systematically controlling the VI/II ratio, it is possible to produce different shapes and sizes of ZnO nanostructures. A possible mechanism for the nanostructural change of the as-synthesized ZnO from particle to rod was elucidated based on the relative densities of H + and OH − in the solution.

  2. Controllable synthesis of spindle-like ZnO nanostructures by a simple low-temperature aqueous solution route

    International Nuclear Information System (INIS)

    Lu Hongxia; Zhao Yunlong; Yu Xiujun; Chen Deliang; Zhang Liwei; Xu Hongliang; Yang Daoyuan; Wang Hailong; Zhang Rui

    2011-01-01

    Spindle-like ZnO nanostructures were successfully synthesized through direct precipitation of zinc acetate aqueous solution at 60 deg. C. Phase structure, morphology and microstructure of the products were investigated by X-ray diffraction, TG-DTA, FTIR and field emission scanning electron microscopy (FESEM). Result showed that hexagonal wurtzite structure ZnO nanostructures with about 100 nm in diameter and 100-200 nm in length were obtained. HMTA acted as a soft template in the process and played an important role in the formation of spindle-like ZnO nanostructures. Meanwhile, different morphologies were also obtained by altering synthetic temperature, additional agents and the ratios of Zn 2+ /OH - . Possible mechanism for the variations of morphology with synthesis parameters was also discussed in this paper.

  3. Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology

    DEFF Research Database (Denmark)

    Kumar, Rajendra; McGlynn, E.; Biswas, M.

    2008-01-01

    ZnO nanostructures were grown on Au-catalyzed Si silicon substrates using vapor phase transport at growth temperatures from 800 to 1150 degrees C. The sample location ensured a low Zn vapor supersaturation during growth. Nanostructures grown at 800 and 850 degrees C showed a faceted rodlike...... growth tended to dominate resulting in the formation of a porous, nanostructured morphology. In all cases growth was seen only on the Au-coated region. Our results show that the majority of the nanostructures grow via a vapor-solid mechanism at low growth temperatures with no evidence of Au nanoparticles...

  4. Fullerene nanostructures, monolayers and thin films

    International Nuclear Information System (INIS)

    Cotier, B.N.

    2000-10-01

    The interaction of submonolayer, monolayer and multilayer coverages of C 60 with the Ag/Si(111)-(√3x√3)R30 deg. (√3Ag/Si) and Si(111)-7x7 surfaces has been investigated using atomic force microscopy (AFM), photoelectron spectroscopy (PES) and ultra high vacuum scanning tunneling microscopy (UHV-STM). It is shown that it is possible to preserve the √3Ag/Si surface, normally corrupted by exposure to air, in ambient conditions when immersed beneath a few layers of C 60 molecules. Upon removal of the fullerene layers in the UHV-STM some corruption is observed which is linked to the morphology of the fullerene film (defined by the nature of the interaction of C 60 with √3Ag/Si). This technique opens up the possibility of performing experiments on the clean √3Ag/Si surface outside of UHV conditions. With the discovery of techniques whereby structures may be formed that are composed of only a few atoms/molecules, there is a need to perform electrical measurements in order to probe the fascinating properties of these 'nano-scale' devices. Using AFM, PES and STM evaporated metals and ion implantation have been investigated as materials for use in forming sub-micron scale contacts to nanostructures. It is found that ion implantation is a more promising approach after studying the response to annealing of treated surfaces. Electrical measurements between open/short circuited contacts and through Ag films clearly demonstrate the validity of the method, further confirmed by a PES study which probes the chemical nature of the near surface region of ion-implanted samples. Attempts have been made to form nanostructure templates between sub-micron scale contacts as a possible precursor to forming nanostructures. The bonding state of C 60 molecules on the Si(111)-7x7 surface has been in dispute for many years. To properly understand the system a comprehensive AFM, PES and STM study has been performed. PES results indicate covalent bond formation, with the number of bonds

  5. Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Zhao, Lilong; Pei, Shixin

    2015-01-01

    Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag + ion (Ag Zn ) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag 0 ). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive

  6. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  7. Synthesis of ZnO Nanostructures for Low Temperature CO and UV Sensing

    Directory of Open Access Journals (Sweden)

    Nazar Abbas Shah

    2012-10-01

    Full Text Available In this paper, synthesis and results of the low temperature sensing of carbon monoxide (CO gas and room temperature UV sensors using one dimensional (1-D ZnO nanostructures are presented. Comb-like structures, belts and rods, and needle-shaped nanobelts were synthesized by varying synthesis temperature using a vapor transport method. Needle-like ZnO nanobelts are unique as, according to our knowledge, there is no evidence of such morphology in previous literature. The structural, morphological and optical characterization was carried out using X-ray diffraction, scanning electron microscopy and diffused reflectance spectroscopy techniques. It was observed that the sensing response of comb-like structures for UV light was greater as compared to the other grown structures. Comb-like structure based gas sensors successfully detect CO at 75 °C while other structures did not show any response.

  8. Simultaneous tuning of electric field intensity and structural properties of ZnO: Graphene nanostructures for FOSPR based nicotine sensor.

    Science.gov (United States)

    Tabassum, Rana; Gupta, Banshi D

    2017-05-15

    We report theoretical and experimental realization of a SPR based fiber optic nicotine sensor having coatings of silver and graphene doped ZnO nanostructure onto the unclad core of the optical fiber. The volume fraction (f) of graphene in ZnO was optimized using simulation of electric field intensity. Four types of graphene doped ZnO nanostructures viz. nanocomposites, nanoflowers, nanotubes and nanofibers were prepared using optimized value of f. The morphology, photoluminescence (PL) spectra and UV-vis spectra of these nanostructures were studied. The peak PL intensity was found to be highest for ZnO: graphene nanofibers. The optimized value of f in ZnO: graphene nanofiber was reconfirmed using UV-vis spectroscopy. The experiments were performed on the fiber optic probe fabricated with Ag/ZnO: graphene layer and optimized parameters for in-situ detection of nicotine. The interaction of nicotine with ZnO: graphene nanostructures alters the dielectric function of ZnO: graphene nanostructure which is manifested in terms of shift in resonance wavelength. From the sensing signal, the performance parameters were measured including sensitivity, limit of detection (LOD), limit of quantification (LOQ), stability, repeatability and selectivity. The real sample prepared using cigarette tobacco leaves and analyzed using the fabricated sensor makes it suitable for practical applications. The achieved values of LOD and LOQ are found to be unrivalled in comparison to the reported ones. The sensor possesses additional advantages such as, immunity to electromagnetic interference, low cost, capability of online monitoring, remote sensing. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  10. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho; Wang, Zhenwei; Hedhili, Mohamed N.; Wehbe, Nimer; Alshareef, Husam N.

    2017-01-01

    , the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn

  11. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong; Ding, Yong; Li, Zhou; Song, Jinhui; Wang, Zhong Lin

    2009-01-01

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed

  12. Room temperature ferromagnetism and gas sensing in ZnO nanostructures: Influence of intrinsic defects and Mn, Co, Cu doping

    Energy Technology Data Exchange (ETDEWEB)

    Mhlongo, Gugu H., E-mail: gmhlongo@csir.co.za [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Shingange, Katekani; Tshabalala, Zamaswazi P.; Dhonge, Baban P. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa); Mahmoud, Fawzy A. [Solid State Physics Dept., National Research Centre, P.O. 12622, Dokki, Giza (Egypt); Mwakikunga, Bonex W.; Motaung, David E. [DST/CSIR National Centre for Nanostructured Materials, Council for Scientific and Industrial Research, Pretoria 0001 (South Africa)

    2016-12-30

    Highlights: • Preparation of Mn, Co, Cu doped ZnO via microwave-assisted method. • Doping alters the morphology of ZnO nanostructures. • Concentration of zinc and oxygen related defects vary with doping. • Correlation between PL and EPR was established. • Both undoped and doped ZnO nanostructures showed selectivity towards NH{sub 3}. - Abstract: Undoped and transition metal (Cu, Co and Mn) doped ZnO nanostructures were successfully prepared via a microwave-assisted hydrothermal method followed by annealing at 500 °C. Numerous characterization facilities such as X-ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM) were employed to acquire the structural and morphological information of the prepared ZnO based products. Combination of defect structure analysis based on photoluminescence (PL) and electron paramagnetic resonance (EPR) indicated that co-existing oxygen vacancies (V{sub O}) and zinc interstitials (Zn{sub i}) defects are responsible for the observed ferromagnetism in undoped and transition metal (TM) doped ZnO systems. PL analysis demonstrated that undoped ZnO has more donor defects (V{sub O} and Zn{sub i}) which are beneficial for gas response enhancement. Undoped ZnO based sensor exhibited a higher sensor response to NH{sub 3} gas compared to its counterparts owing to high content of donor defects while transition metal doped sensors showed short response and recovery times compared to undoped ZnO.

  13. Defect-induced magnetic order in pure ZnO films

    Science.gov (United States)

    Khalid, M.; Ziese, M.; Setzer, A.; Esquinazi, P.; Lorenz, M.; Hochmuth, H.; Grundmann, M.; Spemann, D.; Butz, T.; Brauer, G.; Anwand, W.; Fischer, G.; Adeagbo, W. A.; Hergert, W.; Ernst, A.

    2009-07-01

    We have investigated the magnetic properties of pure ZnO thin films grown under N2 pressure on a -, c -, and r -plane Al2O3 substrates by pulsed-laser deposition. The substrate temperature and the N2 pressure were varied from room temperature to 570°C and from 0.007 to 1.0 mbar, respectively. The magnetic properties of bare substrates and ZnO films were investigated by SQUID magnetometry. ZnO films grown on c - and a -plane Al2O3 substrates did not show significant ferromagnetism. However, ZnO films grown on r -plane Al2O3 showed reproducible ferromagnetism at 300 K when grown at 300-400°C and 0.1-1.0 mbar N2 pressure. Positron annihilation spectroscopy measurements as well as density-functional theory calculations suggest that the ferromagnetism in ZnO films is related to Zn vacancies.

  14. Characterization of ZnO nanostructures: A challenge to positron annihilation spectroscopy and other methods

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, Gerhard; Anwand, Wolfgang; Grambole, Dieter; Skorupa, Wolfgang [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Dresden (Germany); Egger, Werner; Sperr, Peter [Institut fuer Angewandte Physik und Messtechnik LRT2, Fakultaet fuer Luft- und Raumfahrttechnik, Werner-Heisenberg-Weg 39, Universitaet der Bundeswehr, Neubiberg (Germany); Beinik, Igor; Wang, Lin; Teichert, Christian [Institut fuer Physik, Montanuniversitaet Leoben (Austria); Kuriplach, Jan; Lang, Jan [Department of Low Temperature Physics, Charles University, Prague (Czech Republic); Zviagin, Sergei; Cizmar, Erik [Institut Hochfeld-Magnetlabor, Forschungszentrum Dresden-Rossendorf, Dresden (Germany); Ling, Chi Chung; Hsu, Yuk Fan; Xi, Yan Yan; Chen, Xinyi; Djurisic, Aleksandra B. [Department of Physics, University of Hong Kong, Hong Kong (China)

    2009-11-15

    ZnO nanostructures are of special interest for device applications. However, their structural characterization remains an ongoing challenge. This paper reviews recent efforts and latest achievements in this direction. Results comprise PAS in the form of Slow Positron Implantation Spectroscopy (SPIS) and Pulsed Low Energy Positron Lifetime Spectroscopy (PLEPS), Nuclear Reaction Analysis (NRA), Atomic Force Microscopy (AFM), conductive AFM (C-AFM), Nuclear Magnetic Resonance (NMR), Electron Spin Resonance (ESR), Photoluminescence (PL) spectroscopy, and latest theoretical investigations of structure-related and positron properties of selected defects. The fundamental importance of a relationship between fabrication conditions, native defect formation, and resulting optical and electronic properties is demonstrated by getting either inferior (nanorods) or significantly improved (tetrapods) optical properties compared to single crystal samples, depending on the nanostructure fabrication method. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  16. Sea-Urchin-Like ZnO Nanoparticle Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Wen Ma

    2015-01-01

    Full Text Available We present novel sea-urchin-like ZnO nanoparticles synthesized using a chemical solution method. Solution approaches to synthesizing ZnO nanostructures have several advantages including low growth temperatures and high potential for scaling up. We investigated the influence of reaction times on the thickness and morphology of sea-urchin-like ZnO nanoparticles, and XRD patterns show strong intensity in every direction. Dye-sensitized solar cells (DSSCs were developed using the synthesized ZnO nanostructures as photoanodes. The DSSCs comprised a fluorine-doped tin oxide (FTO glass with dense ZnO nanostructures as the working electrode, a platinized FTO glass as the counter electrode, N719-based dye, and I-/I3-liquid electrolyte. The DSSC fabricated using such nanostructures yielded a high power conversion efficiency of 1.16% with an incident photo-to-current efficiency (IPCE as high as 15.32%. Electrochemical impedance spectroscopy was applied to investigate the characteristics of DSSCs. An improvement in the electron transport in the ZnO photoanode was also observed.

  17. Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

    Science.gov (United States)

    Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

    2013-04-07

    Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

  18. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  19. Influences of Co doping on the structural and optical properties of ZnO nanostructured

    Science.gov (United States)

    Majeed Khan, M. A.; Wasi Khan, M.; Alhoshan, Mansour; Alsalhi, M. S.; Aldwayyan, A. S.

    2010-07-01

    Pure and Co-doped ZnO nanostructured samples have been synthesized by a chemical route. We have studied the structural and optical properties of the samples by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), field-emission transmission electron microscope (FETEM), energy-dispersive X-ray (EDX) analysis and UV-VIS spectroscopy. The XRD patterns show that all the samples are hexagonal wurtzite structures. Changes in crystallite size due to mechanical activation were also determined from X-ray measurements. These results were correlated with changes in particle size followed by SEM and TEM. The average crystallite sizes obtained from XRD were between 20 to 25 nm. The TEM images showed the average particle size of undoped ZnO nanostructure was about 20 nm whereas the smallest average grain size at 3% Co was about 15 nm. Optical parameters such as absorption coefficient ( α), energy band gap ( E g ), the refractive index ( n), and dielectric constants ( σ) have been determined using different methods.

  20. Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

    Science.gov (United States)

    Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2012-07-01

    Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

  1. Nanostructured refractory thin films for solar applications

    Science.gov (United States)

    Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

    2014-08-01

    Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.

  2. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  3. Homogeneous ZnO nanostructure arrays on GaAs substrates by two-step chemical bath synthesis

    International Nuclear Information System (INIS)

    Huang, Chun-Yuan; Wu, Tzung-Han; Cheng, Chiao-Yang; Su, Yan-Kuin

    2012-01-01

    ZnO nanostructures, including nanowires, nanorods, and nanoneedles, have been deposited on GaAs substrates by the two-step chemical bath synthesis. It was demonstrated that the O 2 -plasma treatment of GaAs substrates prior to the sol–gel deposition of seed layers was essential to conformally grow the nanostructures instead of 2D ZnO bunches and grains on the seed layers. Via adjusting the growth time and concentration of precursors, nanostructures with different average diameter (26–225 nm), length (0.98–2.29 μm), and density (1.9–15.3 × 10 9 cm −2 ) can be obtained. To the best of our knowledge, this is the first demonstration of ZnO nanostructure arrays grown on GaAs substrates by the two-step chemical bath synthesis. As an anti-reflection layer on GaAs-based solar cells, the array of ZnO nanoneedles with an average diameter of 125 nm, a moderate length of 2.29 μm, and the distribution density of 9.8 × 10 9 cm −2 has increased the power conversion efficiency from 7.3 to 12.2 %, corresponding to a 67 % improvement.

  4. Functionalized tetrapod-like ZnO nanostructures for plasmid DNA purification, polymerase chain reaction and delivery

    International Nuclear Information System (INIS)

    Nie Leng; Gao Lizeng; Yan Xiyun; Wang Taihong

    2007-01-01

    Functionalized tetrapodal ZnO nanostructures are tested in plasmid DNA experiments (1) as a solid-phase adsorbent for plasmid DNA purification (2) as improving reagents in a polymerase chain reaction (PCR) and (3) as novel carriers for gene delivery. The amino-modification, the tetrapod-like shape of the nanostructure and its high biocompatibility all contribute to measurements showing promise for applications. A sol-gel method is used for silica coating and amino-modification. Plasmid DNA is purified through reversible conjugations of amino-modified ZnO tetrapods with DNA. Also, as additional reagents, functionalized tetrapods are shown to improve the amount of PCR product. For transfection, ZnO tetrapods provide some protection against deoxyribonuclease cleavage of plasmid DNA and deliver plasmid DNA into cells with little cytotoxicity

  5. Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films

    International Nuclear Information System (INIS)

    Wang, Canxing; Jiang, Haotian; Li, Yunpeng; Ma, Xiangyang; Yang, Deren

    2013-01-01

    Random lasing (RL) in polycrystalline ZnO films is an intriguing research subject. Here, we have comparatively investigated electrically pumped RL behaviors of two metal-insulator-semiconductor structured devices using the hydrothermal and sputtered ZnO films as the semiconductor components, i.e., the light-emitting layers, respectively. It is demonstrated that the device using the hydrothermal ZnO film exhibits smaller threshold current and larger output optical power of the electrically pumped RL. The morphological characterization shows that the hydrothermal ZnO film is somewhat porous and is much rougher than the sputtered one, suggesting that in the former stronger multiple light scattering can occur. Moreover, the photoluminescence characterization indicates that there are fewer defects in the hydrothermal ZnO film than in the sputtered one, which means that the photons can pick up larger optical gain through stimulated emission in the hydrothermal ZnO film. Therefore, it is believed that the stronger multiple light scattering and larger optical gain contribute to the improved performance of the electrically pumped RL from the device using the hydrothermal ZnO film

  6. Mn{sup 2+} ions distribution in doped sol–gel deposited ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Stefan, Mariana, E-mail: mstefan@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, 077125 Magurele (Romania); Ghica, Daniela; Nistor, Sergiu V.; Maraloiu, Adrian V. [National Institute of Materials Physics, P.O. Box MG-7, 077125 Magurele (Romania); Plugaru, Rodica [National Institute for R & D in Microtechnologies (IMT), Erou Iancu Nicolae Str. 126A, 077190 Bucharest (Romania)

    2017-02-28

    Highlights: • Several Mn{sup 2+} centers observed by EPR in sol–gel ZnO films. • Mn{sup 2+} ions localized at Zn{sup 2+} sites in ZnO grains and disordered ZnO phase. • Sixfold coordinated Mn{sup 2+} ions localized in inter-grain region. • Aggregated Mn in insular-like regions between ZnO grains in the ZnO:5%Mn film. • Aggregated Mn phase presence and distribution observed by EPR and EDX-STEM. - Abstract: The localization and distribution of the Mn{sup 2+} ions in two sol–gel deposited ZnO films doped with different manganese concentrations were investigated by electron paramagnetic resonance spectroscopy and analytical transmission electron microscopy. In the lightly doped sample the Mn{sup 2+} ions are mainly localized substitutionally at isolated tetrahedrally coordinated Zn{sup 2+} sites in both crystalline ZnO nanograins (34%) and surrounding disordered ZnO (52%). In the highly doped ZnO film, a much smaller proportion of manganese substitutes Zn{sup 2+} in the crystalline and disordered ZnO (10%). The main amount (85%) of manganese aggregates in a secondary phase as an insular-like distribution between the ZnO nanograins. The remaining Mn{sup 2+} ions (14% and 5% at low and high doping levels, respectively) are localized at isolated, six-fold coordinated sites, very likely in the disordered intergrain region. Annealing at 600 °C induced changes in the Mn{sup 2+} ions distribution, reflecting the increase of the ZnO crystallization degree, better observed in the lightly doped sample.

  7. Influence of External Gaseous Environments on the Electrical Properties of ZnO Nanostructures Obtained by a Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Marcin Procek

    2016-11-01

    Full Text Available This paper deals with experimental investigations of ZnO nanostructures, consisting of a mixture of nanoparticles and nanowires, obtained by the chemical (hydrothermal method. The influences of both oxidizing (NO2 and reducing gases (H2, NH3, as well as relative humidity (RH on the physical and chemical properties of ZnO nanostructures were tested. Carrier gas effect on the structure interaction with gases was also tested; experiments were conducted in air and nitrogen (N2 atmospheres. The effect of investigated gases on the resistance of the ZnO nanostructures was tested over a wide range of concentrations at room temperature (RT and at 200 °C. The impact of near- ultraviolet (UV excitation (λ = 390 nm at RT was also studied. These investigations indicated a high response of ZnO nanostructures to small concentrations of NO2. The structure responses to 1 ppm of NO2 amounted to about: 600% in N2/230% in air at 200 °C (in dark conditions and 430% in N2/340% in air at RT (with UV excitation. The response of the structure to the effect of NO2 at 200 °C is more than 105 times greater than the response to NH3, and more than 106 times greater than that to H2 in the relation of 1 ppm. Thus the selectivity of the structure for NO2 is very good. What is more, the selectivity to NO2 at RT with UV excitation increases in comparison at elevated temperature. This paper presents a great potential for practical applications of ZnO nanostructures (including nanoparticles in resistive NO2 sensors.

  8. Microstructures and photocatalytic properties of porous ZnO films synthesized by chemical bath deposition method

    International Nuclear Information System (INIS)

    Wang Huihu; Dong, Shijie; Chang Ying; Zhou Xiaoping; Hu Xinbin

    2012-01-01

    Different porous ZnO film structures on the surface of alumina substrates were prepared through a simple chemical bath deposition method in the methanolic zinc acetate solution. The surface morphology and phase structure of porous ZnO film were determined by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. Both initial zinc acetate concentration and sintering temperature have great impact on the final film structures. With the increase of initial zinc acetate concentration, the porous structures can be finely tuned from circular nest like assemblies composed film into successive nest like film, and finally to globular aggregates composed film. By increasing the sintering temperature, the porous structure of successive nest like film can be further controlled. Furthermore, the crystallinity of photocatalysts also can be greatly improved. The photodegradation results of Methyl Orange revealed that porous ZnO film with successive nest like structure sintered at 500 °C exhibited the highest photocatalytic activity under UV illumination.

  9. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  10. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  11. Slow positron beam study of hydrogen ion implanted ZnO thin films

    Science.gov (United States)

    Hu, Yi; Xue, Xudong; Wu, Yichu

    2014-08-01

    The effects of hydrogen related defect on the microstructure and optical property of ZnO thin films were investigated by slow positron beam, in combination with x-ray diffraction, infrared and photoluminescence spectroscopy. The defects were introduced by 90 keV proton irradiation with doses of 1×1015 and 1×1016 ions cm-2. Zn vacancy and OH bonding (VZn+OH) defect complex were identified in hydrogen implanted ZnO film by positron annihilation and infrared spectroscopy. The formation of these complexes led to lattice disorder in hydrogen implanted ZnO film and suppressed the luminescence process.

  12. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  13. Characteristics of strontium-doped ZnO films on love wave filter applications

    International Nuclear Information System (INIS)

    Water, Walter; Yan, Y.-S.

    2007-01-01

    The effect of dopant concentrations in strontium-doped ZnO films on Love wave filter characteristics was investigated. Strontium-doped ZnO films with a c-axis preferred orientation were grown on ST-cut quartz by radio frequency magnetron sputtering. The crystalline structures and surface morphology of films were studied by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The electromechanical coupling coefficient, dielectric constant, and temperature coefficient of frequency of filters were then determined using a network analyzer. A uniform crystalline structure and smooth surface of the ZnO films were obtained at the 1-2 mol% strontium dopant level. The electromechanical coupling coefficient of the 1 mol% strontium-doped ZnO film reaches a maximum of 0.61%, and the temperature coefficient of frequency declines to + 12.87 ppm/deg. C at a 1.5 mol% strontium dopant level

  14. Implanted ZnO thin films: Microstructure, electrical and electronic properties

    International Nuclear Information System (INIS)

    Lee, J.; Metson, J.; Evans, P.J.; Kinsey, R.; Bhattacharyya, D.

    2007-01-01

    Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films

  15. Nanostructure sword-like ZnO wires: Rapid synthesis and characterization through a microwave-assisted route

    International Nuclear Information System (INIS)

    Kajbafvala, Amir; Shayegh, Mohammad Reza; Mazloumi, Mahyar; Zanganeh, Saeid; Lak, Aidin; Mohajerani, Matin Sadat; Sadrnezhaad, S.K.

    2009-01-01

    Nanostructure sword-like ZnO wires with diameters of about 80-250 nm and the length of ∼1-4 μm have been synthesized by a fast, simple and template-free microwave-assisted method. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) spectroscopy and room temperature photoluminescence (PL) measurements was used for characterization of the as-prepared products. The nanostructure sword-like ZnO wires have high crystallinity with the average crystallite size of about 53 nm and show a UV emission and a visible green band in their PL spectrum. The possible growth mechanism of the nanostructures along the crystallographic direction and subsequent formation of wires were also investigated

  16. Design of Highly Sensitive C2H5OH Sensors Using Self-Assembled ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Jong-Heun Lee

    2011-10-01

    Full Text Available Various ZnO nanostructures such as porous nanorods and two hierarchical structures consisting of porous nanosheets or crystalline nanorods were prepared by the reaction of mixtures of oleic-acid-dissolved ethanol solutions and aqueous dissolved Zn-precursor solutions in the presence of NaOH. All three ZnO nanostructures showed sensitive and selective detection of C2H5OH. In particular, ultra-high responses (Ra/Rg = ~1,200, Ra: resistance in air, Rg: resistance in gas to 100 ppm C2H5OH was attained using porous nanorods and hierarchical structures assembled from porous nanosheets, which is one of the highest values reported in the literature. The gas response and linearity of gas sensors were discussed in relation to the size, surface area, and porosity of the nanostructures.

  17. ZnO film for application in surface acoustic wave device

    International Nuclear Information System (INIS)

    Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

    2007-01-01

    High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

  18. Formation of p-type ZnO thin film through co-implantation

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-01

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  19. Improving the conductance of ZnO thin film doping with Ti by using a cathodic vacuum arc deposition process

    International Nuclear Information System (INIS)

    Wu, Chun-Sen; Lin, Bor-Tsuen; Jean, Ming-Der

    2011-01-01

    The Ti-doped ZnO films compared to un-doped ZnO films were deposited onto Corning XG glass substrates by using a cathodic vacuum arc deposition process in a mixture of oxygen and argon gases. The structural, electrical and optical properties of un-doped and Ti-doped ZnO films have been investigated. When the Ti target power is about 750 W, the incorporation of titanium atoms into zinc oxide films is obviously effective. Additionally, the resistivity of un-doped ZnO films is high and reduces to a value of 3.48 x 10 -3 Ω-cm when Ti is incorporated. The Ti doped in the ZnO films gave rise to the improvement of the conductivity of the films obviously. The Ti-doped ZnO films have > 85% transmittance in a range of 400-700 nm.

  20. Investigation of electrical and optical properties of MEH-PPV: ZnO nanocomposite films for OLED applications

    Energy Technology Data Exchange (ETDEWEB)

    Azhar, N. E. A., E-mail: najwaezira@yahoo.com; Shafura, A. K., E-mail: shafura@ymail.com; Affendi, I. H. H., E-mail: irmahidayanti.halim@gmail.com; Shariffudin, S. S., E-mail: sobihana@gmail.com [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Saurdi, I., E-mail: saurdy788@gmail.com [Faculty of Electrical Engineering, UiTM Sarawak, Kampus Kota Meranek, Sarawak (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Research Chair of Targeting and Treatment of Cancer Using Nanoparticles Department of Biochemistry, College of Science, King Saud University (KSU), 245 Riyadh 11454 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA (UiTM), Shah Alam, Selangor (Malaysia)

    2016-07-06

    Recent investigations of the promising materials for optoelectronic have been demonstrated by introducing n-type inorganic material into conjugated polymer. The optical and electrical of nanocomposite films based on poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and zinc oxide (ZnO) nanostructured of various deposition layers (1 to 3 layers) have been investigated. The MEH-PPV: ZnO nanocomposite films were deposited using spin-coating technique. The surface morphology nanocomposite films were characterized using field emission scanning electron microscope. From surface profiler measurement, we found that the thickness of nanocomposite films increased as deposition time increased. The optical properties were measured using photoluminescence spectroscope. The photoluminescence (PL) spectra showed that two deposition layers is the highest intensity at visible region (green emission) due to high energy transfer from particles to the polymer. The current density for two layers sample is due to aggregation of conjugated polymer chain hence form excited interchain exciton for optical excitation. This study will provide better performance and suitable for optoelectronic device especially OLEDs application.

  1. Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-10-15

    Graphical abstract: - Highlights: • Porous ZnO films were deposited on porous anodic alumina substrates. • Significant ferromagnetism (FM) has been observed in porous ZnO films (110 emu/cm{sup 3}). • The strong magnetic anisotropy was observed in the porous ZnO films. • The origin of FM is attributed to the oxygen vacancy with a local magnetic moment. - Abstract: Pure porous ZnO films were prepared by direct current reactive magnetron sputtering on porous anodic alumina substrates. Remarkably large room-temperature ferromagnetism was observed in the films. The highest saturation moment along the out-of-plane direction was about 110 emu/cm{sup 3}. Experimental and theoretical results suggested that the oxygen vacancies and the unique porous structure of the films are responsible for the large ferromagnetism. There are two modes of coupling between oxygen vacancies in the porous ZnO films: (i) exchange interactions directly between the oxygen vacancies and (ii) with the mediation of conduction electrons. In addition, it was found that the magnetic moment of ZnO films can be changed by tuning the concentration of oxygen vacancies. These observations may be useful in the development of ZnO-based spintronics devices.

  2. Photoconductive ZnO Films Printed on Flexible Substrates by Inkjet and Aerosol Jet Techniques

    Science.gov (United States)

    Winarski, D. J.; Kreit, E.; Heckman, E. M.; Flesburg, E.; Haseman, M.; Aga, R. S.; Selim, F. A.

    2018-02-01

    Zinc oxide (ZnO) thin films have remarkable versatility in sensor applications. Here, we report simple ink synthesis and printing methods to deposit ZnO photodetectors on a variety of flexible and transparent substrates, including polyimide (Kapton), polyethylene terephthalate, cyclic olefin copolymer (TOPAS), and quartz. X-ray diffraction analysis revealed the dependence of the film orientation on the substrate type and sintering method, and ultraviolet-visible (UV-Vis) absorption measurements revealed a band edge near 380 nm. van der Pauw technique was used to measure the resistivity of undoped ZnO and indium/gallium-codoped ZnO (IGZO) films. IGZO films showed lower resistivity and larger average grain size compared with undoped ZnO films due to addition of In3+ and Ga3+, which act as donors. A 365-nm light-emitting diode was used to photoirradiate the films to study their photoconductive response as a function of light intensity at 300 K. The results revealed that ZnO films printed by aerosol jet and inkjet techniques exhibited five orders of magnitude photoconductivity, indicating that such films are viable options for use in flexible photodetectors.

  3. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching ...

  4. Impact of thiol and amine functionalization on photoluminescence properties of ZnO films

    International Nuclear Information System (INIS)

    Jayalakshmi, G.; Saravanan, K.; Balasubramanian, T.

    2013-01-01

    In the present study, we have investigated surface functionalization of ZnO films with dodecanethiol (Thiol) and trioctylamine (amine) by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle (CA) and photoluminescence (PL) measurements. The chemical bondings of thiol and amine with ZnO have been confirmed via the formation of Zn–S and Zn–N bonds by XPS measurements. AFM measurements on ZnO films before and after surface functionalization with thiol and amine provide evidence for the successful functionalization of thiol and amine on ZnO surfaces without any island formation. The CA measurements on ZnO films before and after surface functionalization with thiol and amine show the hydrophobic nature. PL measurements of thiol and amine functionalized ZnO show enhancements of UV emission and quenching of visible emission. The enhanced UV emissions in thiol and amine functionalized ZnO films suggest that the surface defects such as oxygen vacancies are passivated by thiol and amine functionalization. -- Highlights: ► Surface functionalization is a new approach to reduce surface dependent non-radiative process. ► Oxygen vacancies are passivated on surface functionalization. ► Thiol and amine functionalized ZnO show enhancements of UV emission

  5. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    In electrical characterization as well, when annealing temperature was increased .... of ZnO (002) peaks and (c) crystallite size and stress generation on ZnO thin films ... sufficient kinetic energy and surface mobility to occupy stable positions ...

  6. Nanostructured manganese oxide thin films as electrode material for supercapacitors

    Science.gov (United States)

    Xia, Hui; Lai, Man On; Lu, Li

    2011-01-01

    Electrochemical capacitors, also called supercapacitors, are alternative energy storage devices, particularly for applications requiring high power densities. Recently, manganese oxides have been extensively evaluated as electrode materials for supercapacitors due to their low cost, environmental benignity, and promising supercapacitive performance. In order to maximize the utilization of manganese oxides as the electrode material for the supercapacitors and improve their supercapacitive performance, the nanostructured manganese oxides have therefore been developed. This paper reviews the synthesis of the nanostructured manganese oxide thin films by different methods and the supercapacitive performance of different nanostructures.

  7. Effect of boric acid composition on the properties of ZnO thin film nanotubes and the performance of dye-sensitized solar cell (DSSC)

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, M.Y.A., E-mail: mohd.yusri@ukm.edu.my; Roza, L.; Umar, A.A., E-mail: akrajas@ukm.edu.my; Salleh, M.M.

    2015-11-05

    The effect of boric acid (H{sub 3}BO{sub 3}) composition at constant concentration of hexamethylenetetramine (HMT) and zinc nitrate (Zn(NO{sub 3}){sub 2}) on the morphology, thickness, elemental composition, optical absorption, structure, photoluminescence of ZnO nanotubes has been investigated. The performance of the DSSC utilizing the ZnO samples has also been studied. It was found that the structure, thickness, elemental composition, optical absorption and morphology of ZnO nanostructure are significantly affected by the concentration of H{sub 3}BO{sub 3}. The diameter and thickness of ZnO nanotubes decreases as the composition of H{sub 3}BO{sub 3} increases. The DSSC utilizing ZnO nanotubes synthesized at 2 wt. % H{sub 3}BO{sub 3} performs the highest J{sub SC} and η of 2.67 mA cm{sup −2} and 0.29%, respectively. The highest performance of the device is due to the highest optical absorption of ZnO nanotubes sample and lowest charge interfacial resistance. - Graphical abstract: Nyquist plots of the DSSCs utilizing ZnO nanotubes prepared at various boric acid compositions. - Highlights: • Boron was doped into ZnO films by adding H{sub 3}BO{sub 3} into the growth solution. • Diameter and thickness of ZnO nanotubes decreases with the composition of H{sub 3}BO{sub 3}. • The DSSC performs the highest J{sub SC} and η of 2.67 mA cm{sup −2} and 0.29%, respectively. • This is due to high specific surface area and low charge interfacial resistance.

  8. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  9. Photocatalytic Activity of Nanostructured Titanium Dioxide Thin Films

    Directory of Open Access Journals (Sweden)

    Zdenek Michalcik

    2012-01-01

    Full Text Available The aim of this paper is to investigate the properties and photocatalytic activity of nanostructured TiO2 layers. The glancing angle deposition method with DC sputtering at low temperature was applied for deposition of the layers with various columnar structures. The thin-film structure and surface morphology were analyzed by XRD, SEM, and AFM analyses. The photocatalytic activity of the films was determined by the rate constant of the decomposition of the Acid Orange 7. In dependence on the glancing angle deposition parameters, three types of columnar structures were obtained. The films feature anatase/rutile and/or amorphous structures depending on the film architecture and deposition method. All the films give the evidence of the photocatalytic activity, even those without proved anatase or rutile structure presence. The impact of columnar boundary in perspective of the photocatalytic activity of nanostructured TiO2 layers was discussed as the possible factor supporting the photocatalytic activity.

  10. Nanostructured films of metal particles obtained by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Muniz-Miranda, M., E-mail: muniz@unifi.it [Dipartimento di Chimica “U. Schiff”, Università di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino (Italy); Gellini, C. [Dipartimento di Chimica “U. Schiff”, Università di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino (Italy); Giorgetti, E.; Margheri, G.; Marsili, P. [Istituto Sistemi Complessi (CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Lascialfari, L.; Becucci, L. [Dipartimento di Chimica “U. Schiff”, Università di Firenze, Via della Lastruccia 3, 50019 Sesto Fiorentino (Italy); Trigari, S. [Istituto Sistemi Complessi (CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Giammanco, F. [Dipartimento di Fisica “E. Fermi”, Università di Pisa, Largo Pontecorvo 3, 56127 Pisa (Italy)

    2013-09-30

    Colloidal dispersions of silver and gold nanoparticles were obtained in pure water by ablation with nanosecond pulsed laser. Then, by filtration of the metal particles on alumina, we fabricated nanostructured films, whose surface morphology was examined by atomic force microscopy (AFM) and related to surface-enhanced Raman scattering (SERS) after adsorption of adenine. - Highlights: • Ag and Au colloidal nanoparticles were obtained by laser ablation. • Nanostructured Ag and Au films were fabricated by filtration of metal nanoparticles. • Surface morphology of metal films was investigated by atomic force microscopy. • Surface-enhanced Raman spectra (SERS) of adenine on metal films were obtained. • SERS enhancements were related to the surface roughness of the metal films.

  11. Photovoltaic Properties of Co-doped ZnO Thin Film on Glass Substrate

    International Nuclear Information System (INIS)

    Sabia Aye; Zin Ma Ma; May Nwe Oo; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Cobalt (Co) 0.4 mol doped zinc oxide (ZnO) fine powder was prepared by solid state mixed oxide route. Phase formation and crystal structure of Co-doped ZnO (CZO) powder were examined by X-ray diffraction (XRD). Scanning Electron Microscopy (SEM) was used to observe the micro structure of Co doped ZnO powder. Energy Dispersive X-ray Fluorescent (EDXRF) technique gave the elemental content of cobalt and zinc. Co-doped ZnO film was formed on glass substrate by spin coating technique. Photovoltaic properties of CZO/glass cell were measured.

  12. Synthesis of 1D, 2D, and 3D ZnO Polycrystalline Nanostructures Using the Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Yung-Kuan Tseng

    2012-01-01

    Full Text Available This study employed various polyol solvents to synthesize zinc oxide polycrystalline nanostructures in the form of fibers (1D, rhombic flakes (2D, and spheres (3D. The synthetic process primarily involved the use of zinc acetate dihydrate in polyol solutions, which were used to derive precursors of zinc alkoxides. Following hydrolysis at 160°C, the zinc alkoxide particles self-assembled into polycrystalline nanostructures with different morphologies. Following calcination at 500°C for 1 h, polycrystalline ZnO with good crystallinity was obtained. FE-SEM explored variations in surface morphology; XRD was used to analyze the crystalline structures and crystallinity of the products, which were confirmed as ZnO wurtzite structures. FE-TEM verified that the ZnO nanostructures were polycrystalline. Furthermore, we employed TGA/DSC to observe the phase transition. According to the results of property analyses, we proposed models of the relevant formation mechanisms. Finally, various ZnO structures were applied in the degradation of methylene blue to compare their photocatalytic efficiency.

  13. Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

    International Nuclear Information System (INIS)

    Pan, C.-J.; Hsu, H.-C.; Cheng, H.-M.; Wu, C.-Y.; Hsieh, W.-F.

    2007-01-01

    ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn 1 -x Mg x O alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn 2+ ions are successfully substituted by Mg 2+ ions in the ZnO lattice. In Raman-scattering studies, the change of E 2 (high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm -1 are presumably attributed to the Mg-related vibrational modes. - Graphical abstract: We reported the synthesis of the ZnMgO nanostructures prepared by a simple vapor transport method. Magnesium-related anomalous modes are observed by Raman spectra for the first time in ZnMgO system

  14. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  15. Controlled morphologies and optical properties of ZnO films and their photocatalytic activities

    Energy Technology Data Exchange (ETDEWEB)

    Duan Jingjing [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Liu Xiaoheng, E-mail: xhliu@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Han Qiaofeng [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China); Wang Xin, E-mail: wangx@mail.njust.edu.cn [Key Laboratory for Soft Chemistry and Functional Materials, Nanjing University of Science and Technology, Ministry of Education, Nanjing 210094 (China)

    2011-09-15

    Highlights: > Gelatin acts as a capping reagent in the morphology synthesis of ZnO films. > The microstructures of ZnO films are hexagonal prisms, plates and rose-like crystals. > The hexagonal prisms and rose-like films exhibit excellent photocatalytic activities. - Abstract: ZnO films with three different microstructures including hexagonal prisms, plates and rose-like twinned crystals were fabricated using chemical bath deposition with different concentration of gelatin. The growth mechanisms of ZnO films were discussed, and the gelatin played a vital role as a polyelectrolyte capping the formation of microstructures. The photoluminescence and Raman properties were found sensitive to the crystal morphologies of ZnO films. Significantly, the photodegradation efficiencies of methylene blue under UV light irradiation in the presence of ZnO films consisted of hexagonal prisms and rose-like twinned crystals were 95% and 96%, respectively. The excellent photocatalytic activities can be ascribed to the high oxygen vacancies concentration and high percentage of polar planes, and this result was important in addressing the origin of high photocatalytic activity.

  16. Microwave-assisted low temperature fabrication of ZnO thin film electrodes for solar energy harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Nirmal Peiris, T.A.; Sagu, Jagdeep S.; Hazim Yusof, Y.; Upul Wijayantha, K.G., E-mail: U.Wijayantha@lboro.ac.uk

    2015-09-01

    Metallic Zn thin films were electrodeposited on fluorine-doped tin oxide (FTO) glass substrates and oxidized under air by conventional radiant and microwave post-annealing methods to obtain ZnO thin film electrodes. The temperature of each post-annealing method was varied systematically and the photoelectrochemical (PEC) performance of electrodes was evaluated. The best photocurrent density achieved by the conventional radiant annealing method at 425 °C for 15 min was 93 μA cm{sup −2} at 1.23 V vs. NHE and the electrode showed an incident photon-to-electron conversion efficiency (IPCE) of 28.2%. X-ray diffractogram of this electrode showed that the oxidation of Zn to ZnO was not completed during the radiant annealing process as evident by the presence of metallic Zn in the electrode. For the electrode oxidized from Zn to ZnO under microwave irradiation, a photocurrent of 130 μA cm{sup −2} at 1.23 V vs. NHE and IPCE of 35.6% was observed after annealing for just 3 min, during which the temperature reached 250 °C. The photocurrent was 40% higher for the microwave annealed sample; this increase was attributed to higher surface area by preserving the nanostructure, confirmed by SEM surface topographical analysis, and better conversion yields to crystalline ZnO. Overall, it was demonstrated that oxidation of Zn to ZnO can be accomplished by microwave annealing five times faster than that of conventional annealing, thus resulting in a ~ 75% power saving. This study shows that microwave processing of materials offers significant economic and performance advantages for industrial scale up. - Highlights: • Conversion of Zn to ZnO by microwave and radiant annealing was conducted. • Microwave conversion was 5 times faster compared to radiant annealing. • Photoelectrochemical performance of microwave annealed ZnO was 40% higher. • Microwave annealing results in a 75% energy saving.

  17. Annealing Temperature Dependence of ZnO Nanostructures Grown by Facile Chemical Bath Deposition for EGFET pH Sensors

    Science.gov (United States)

    Bazilah Rosli, Aimi; Awang, Zaiki; Sobihana Shariffudin, Shafinaz; Herman, Sukreen Hana

    2018-03-01

    Zinc Oxide (ZnO) nanostructures were deposited using chemical bath deposition (CBD) technique in water bath at 95 °C for 4 h. Post-deposition heat treatment in air ambient at various temperature ranging from 200-600 °C for 30 min was applied in order to enhance the electrical properties of ZnO nanostructures as the sensing membrane of extended-gate field effect transistor (EGFET) pH sensor. The as-deposited sample was prepared for comparison. The samples were characterized in terms of physical and sensing properties. FESEM images showed that scattered ZnO nanorods were formed for the as-deposited sample, and the morphology of the ZnO nanorods changed to ZnO nanoflowers when the heat treatment was applied from 200-600 °C. For sensing properties, the samples heated at 300 °C showed the higher sensitivity which was 39.9 mV/pH with the linearity of 0.9792. The sensing properties was increased with the increasing annealing treatment temperature up to 300 °C before decreased drastically.

  18. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  19. Morphology evolution of hierarchical ZnO nanostructures modulated by supersaturation and growth temperature

    Science.gov (United States)

    Yan, Youguo; Zhou, Lixia; Yu, Lianqing; Zhang, Ye

    2008-07-01

    Three kinds of ZnO hierarchical structures, nanocombs with tube- and needle-shaped teeth and hierarchical nanorod arrays, were successfully synthesized through the chemical vapor deposition method. Combining the experimental parameters, the microcosmic growing conditions (growth temperature and supersaturation) along the flux was discussed at length, and, based on the conclusions, three reasonable growth processes were proposed. The results and discussions were beneficial to further realize the relation between the growing behavior of the nanomaterial and microcosmic conditions, and the hierarchical nanostructures obtained were also expected to have potential applications as functional blocks in future nanodevices. Furthermore, the study of photoluminescence further indicated that the physical properties were strongly dependent on the crystal structure.

  20. Electromagnetic and Microwave Absorption Properties of Carbonyl Tetrapod-Shaped Zno Nanostructures Composite Coatings

    Science.gov (United States)

    Yu, Haibo; Qin, Hui; Huang, Yunhua

    2012-08-01

    CIP/T-ZnO/EP composite coatings with carbonyl iron powders (CIP) and tetrapodshaped ZnO (T-ZnO) nanostructures as absorbers, and epoxy resin (EP) as matrix were prepared. The complex permittivity, permeability and microwave absorption properties of the coatings were investigated in the frequency range of 2-18 GHz. The effects of the weight ratio (CIP/T-ZnO/EP), the thickness and the solidification temperature on microwave absorption properties were discussed. When the weight ratio (CIP/TZnO/ EP), the thickness and the solidification temperature is 28:2:22, 1.8 mm, and 10°C, respectively, the optimal wave absorption with the minimum reflection loss (RL) value of -22.38 dB at 15.67 GHz and the bandwidth (RLcoatings may have a promising application in Ku-band (12-18 GHz).

  1. Hybrid AC EL structures with thin protective ZnO film

    International Nuclear Information System (INIS)

    Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

    2008-01-01

    Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

  2. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2005-05-15

    Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

  3. Electrodeposited Mesoporous ZnO Thin Films as Efficient Photocatalysts for the degradation of dye pollutants

    Czech Academy of Sciences Publication Activity Database

    Pauporté, T.; Rathouský, Jiří

    2007-01-01

    Roč. 111, č. 21 (2007), s. 7639-7644 ISSN 1932-7447 Institutional research plan: CEZ:AV0Z40400503 Keywords : ZnO films * photocatalysis * pollutants Subject RIV: CF - Physical ; Theoretical Chemistry

  4. Smoothing of ZnO films by gas cluster ion beam

    International Nuclear Information System (INIS)

    Chen, H.; Liu, S.W.; Wang, X.M.; Iliev, M.N.; Chen, C.L.; Yu, X.K.; Liu, J.R.; Ma, K.; Chu, W.K.

    2005-01-01

    Planarization of wide-band-gap semiconductor ZnO surface is crucial for thin-film device performance. In this study, the rough initial surfaces of ZnO films deposited by r.f. magnetron sputtering on Si substrates were smoothed by gas cluster ion beams. AFM measurements show that the average surface roughness (R a ) of the ZnO films could be reduced considerably from 16.1 nm to 0.9 nm. Raman spectroscopy was used to monitor the structure of both the as-grown and the smoothed ZnO films. Rutherford back-scattering in combination with channeling effect was used to study the damage production induced by the cluster bombardment

  5. Electronic transport properties of nanostructured MnSi-films

    Science.gov (United States)

    Schroeter, D.; Steinki, N.; Scarioni, A. Fernández; Schumacher, H. W.; Süllow, S.; Menzel, D.

    2018-05-01

    MnSi, which crystallizes in the cubic B20 structure, shows intriguing magnetic properties involving the existence of skyrmions in the magnetic phase diagram. Bulk MnSi has been intensively investigated and thoroughly characterized, in contrast to MnSi thin film, which exhibits widely varying properties in particular with respect to electronic transport. In this situation, we have set out to reinvestigate the transport properties in MnSi thin films by means of studying nanostructure samples. In particular, Hall geometry nanostructures were produced to determine the intrinsic transport properties.

  6. Terahertz-field-induced photoluminescence of nanostructured gold films

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

    2013-01-01

    We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

  7. Thin film epitaxy and structure property correlations for non-polar ZnO films

    International Nuclear Information System (INIS)

    Pant, P.; Budai, J.D.; Aggarwal, R.; Narayan, Roger J.; Narayan, J.

    2009-01-01

    Heteroepitaxial growth and strain relaxation were investigated in non-polar a-plane (1 1 -2 0)ZnO films grown on r-plane (1 0 -1 2)sapphire substrates in the temperature range 200-700 deg. C by pulsed laser deposition. The lattice misfit in the plane of the film for this orientation varied from -1.26% in [0 0 0 1] to -18.52% in the [-1 1 0 0] direction. The alignment of (1 1 -2 0)ZnO planes parallel to (1 0 -1 2)sapphire planes was confirmed by X-ray diffraction θ-2θ scans over the entire temperature range. X-ray φ-scans revealed the epitaxial relationship:[0 0 0 1]ZnO-parallel [-1 1 0 1]sap; [-1 1 0 0]ZnO-parallel [-1 -1 2 0]sap. Depending on the growth temperature, variations in the structural, optical and electrical properties were observed in the grown films. Room temperature photoluminescence for films grown at 700 deg. C shows a strong band-edge emission. The ratio of the band-edge emission to green band emission is 135:1, indicating reduced defects and excellent optical quality of the films. The resistivity data for the films grown at 700 deg. C shows semiconducting behavior with room temperature resistivity of 2.2 x 10 -3 Ω-cm.

  8. Efficient acetone sensor based on Ni-doped ZnO nanostructures prepared by spray pyrolysis technique

    Science.gov (United States)

    Darunkar, Swapnil S.; Acharya, Smita A.

    2018-05-01

    Ni-doped ZnO thin film was prepared by home-built spray pyrolysis unit for the detection of acetone at 300°C. Scanning electron microscopic (SEM) images of as-developed thin film of undoped ZnO exhibits large quantity of spherical, non-agglomerated particles with uniform size while in Ni-doped ZnO, particles are quite non-uniform in nature. The particle size estimated by using image J are obtained to be around 20-200 nm. Ni-doping effect on band gaps are determined by UV-vis optical spectroscopy and band gap of Ni-doped ZnO is found to be 3.046 eV. Nickel doping exceptionally enhances the sensing response of ZnO as compared to undoped ZnO system. The major role of the Ni-doping is to create more active sites for chemisorbed oxygen on the surface of sensor and correspondingly, to improve the sensing response. The 6 at.% of Ni-doped ZnO exhibits the highest response (92%) for 100 ppm acetone at 300 °C.

  9. Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Kopach, V. R.; Klepikova, K. S.; Klochko, N. P., E-mail: klochko-np@mail.ru; Khrypunov, G. S.; Korsun, V. E.; Lyubov, V. M.; Kirichenko, M. V.; Kopach, A. V. [National Technical University “Kharkiv Polytechnic Institute” (Ukraine)

    2017-03-15

    We investigate the structure, surface morphology, and optical properties of nanostructured ZnO arrays fabricated by pulsed electrodeposition, Ag nanoparticles precipitated from colloidal solutions, and a ZnO/Ag nanocomposite based on them. The electronic and electrical parameters of the ZnO arrays and ZnO/Ag nanocomposites are analyzed by studying the I–V and C–V characteristics. Optimal modes for fabricating the ZnO/Ag heterostructures with the high stability and sensitivity to ultraviolet radiation as promising materials for use in photodetectors, gas sensors, and photocatalysts are determined.

  10. Multifunctional ZnO interfaces with hierarchical micro- and nanostructures: bio-inspiration from the compound eyes of butterflies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Sha; Yang, Yefeng; Jin, Yizheng; Huang, Jingyun; Zhao, Binghui; Ye, Zhizhen [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China)

    2010-07-15

    Multifunctional zinc oxide (ZnO) interfaces were fabricated by utilizing the technique of low-temperature metal-organic chemical vapor deposition (MOCVD). The ZnO interfacial material exhibit antiwetting, antireflectance, and photonic properties derived from the unique hierarchical micro- and nanostructures of the compound eye of the butterflies. We demonstrate that the fabrication of the multifunctional interfaces by using biotemplates can be applied to other materials, such as Pt. Our study provides an excellent example to obtain multifunctional interfaces by learning from nature. (orig.)

  11. ZnO nanocrystals and allied materials

    CERN Document Server

    Okada, Tatsuo

    2014-01-01

    ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.

  12. Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

    2013-10-01

    Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

  13. Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al 2 O 3 (0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al 2 O 3 (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N 2 and O 2 ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects

  14. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  15. Decoration of ZnO Nanorods with Coral Reefs like NiO Nanostructures by the Hydrothermal Growth Method and Their Luminescence Study

    Directory of Open Access Journals (Sweden)

    Mazhar Ali Abbasi

    2014-01-01

    Full Text Available Composite nanostructures of coral reefs like p-type NiO/n-type ZnO were synthesized on fluorine-doped tin oxide glass substrates by hydrothermal growth. Structural characterization was performed by field emission scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray diffraction techniques. This investigation shows that the adopted synthesis leads to high crystalline quality nanostructures. The morphological study shows that the coral reefs like nanostructures are densely packed on the ZnO nanorods. Cathodoluminescence (CL spectra for the synthesized composite nanostructures are dominated mainly by a broad interstitial defect related luminescence centered at ~630 nm. Spatially resolved CL images reveal that the luminescence of the decorated ZnO nanostructures is enhanced by the presence of the NiO.

  16. Influence of surface defects in ZnO thin films on its biosensing response characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Saha, Shibu; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2011-09-15

    Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

  17. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Science.gov (United States)

    Singh, Ajaib; Schipmann, Susanne; Mathur, Aakash; Pal, Dipayan; Sengupta, Amartya; Klemradt, Uwe; Chattopadhyay, Sudeshna

    2017-08-01

    The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2-7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  18. Influence of surface defects in ZnO thin films on its biosensing response characteristic

    International Nuclear Information System (INIS)

    Saha, Shibu; Gupta, Vinay

    2011-01-01

    Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

  19. Annealing Heat Treatment of ZnO Nanoparticles Grown on Porous Si Substrate Using Spin-Coating Method

    Directory of Open Access Journals (Sweden)

    K. A. Eswar

    2014-01-01

    Full Text Available ZnO nanoparticles were successfully deposited on porous silicon (PSi substrate using spin-coating method. In order to prepare PSi, electrochemical etching was employed to modify the Si surface. Zinc acetate dihydrate was used as a starting material in ZnO sol-gel solution preparation. The postannealing treatments were investigated on morphologies and photoluminescence (PL properties of the ZnO thin films. Field emission scanning electron microscopy (FESEM results indicate that the thin films composed by ZnO nanoparticles were distributed uniformly on PSi. The average sizes of ZnO nanoparticle increase with increasing annealing temperature. Atomic force microscopic (AFM analysis reveals that ZnO thin films annealed at 500°C had the smoothest surface. PL spectra show two peaks that completely correspond to nanostructured ZnO and PSi. These findings indicate that the ZnO nanostructures grown on PSi are promising for application as light emitting devices.

  20. Color-sensitive photoconductivity of nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Oekermann, T. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan) and University of Hannover, Institute of Physical Chemistry and Electrochemistry, Callinstrasse 3-3A, 30167 Hannover (Germany)]. E-mail: torsten.oekermann@pci.uni-hannover.de; Yoshida, T. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan)]. E-mail: yoshida@apchem.gifu-u.ac.jp; Tada, H. [Institute for Molecular Science, Okazaki National Research Institutes, Myodaiji, Okazaki 444-8585 (Japan); Minoura, H. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan)

    2006-07-26

    Nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition have been investigated in conductivity and photoconductivity measurements in view of applications in dye-sensitized solar cells (DSSC) and in optoelectronics. Highly porous ZnO/eosin Y films, which were obtained at potentials < - 0.9 V vs. SCE, were found to have a very high conductivity already in the dark, probably because of a higher n-doping, which is due to a higher concentration of Zn atoms in the film. On the other hand, less porous or non-porous films, which were obtained at more positive potentials and in which the dye molecules are located within the ZnO crystals, were found to show a much higher sensitivity to illumination with visible light in photoconductivity measurements due to a higher absolute photoconductivity and a lower conductivity in the dark.

  1. Color-sensitive photoconductivity of nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition

    International Nuclear Information System (INIS)

    Oekermann, T.; Yoshida, T.; Tada, H.; Minoura, H.

    2006-01-01

    Nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition have been investigated in conductivity and photoconductivity measurements in view of applications in dye-sensitized solar cells (DSSC) and in optoelectronics. Highly porous ZnO/eosin Y films, which were obtained at potentials < - 0.9 V vs. SCE, were found to have a very high conductivity already in the dark, probably because of a higher n-doping, which is due to a higher concentration of Zn atoms in the film. On the other hand, less porous or non-porous films, which were obtained at more positive potentials and in which the dye molecules are located within the ZnO crystals, were found to show a much higher sensitivity to illumination with visible light in photoconductivity measurements due to a higher absolute photoconductivity and a lower conductivity in the dark

  2. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    International Nuclear Information System (INIS)

    Kao, Kuo-Sheng; Shih, Wei-Che; Ye, Wei-Tsuen; Cheng, Da-Long

    2016-01-01

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD_U_V is influenced by SAW types and ZnO film characteristics.

  3. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Sheng [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Shih, Wei-Che [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Ye, Wei-Tsuen [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Cheng, Da-Long, E-mail: dlcheng@stu.edu.tw [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China)

    2016-04-30

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD{sub UV} is influenced by SAW types and ZnO film characteristics.

  4. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

    Directory of Open Access Journals (Sweden)

    Liwen Sang

    2013-08-01

    Full Text Available Ultraviolet (UV photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

  5. The Effect of Tin Addition to ZnO Nanosheet Thin Films for Ethanol and Isopropyl Alcohol Sensor Applications

    Directory of Open Access Journals (Sweden)

    Brian Yuliarto

    2015-01-01

    Full Text Available The requirements of green environmental and public health monitoring have become stricter along with greater world attention for global warming. The most common pollutants in the environment that need tightened control are volatile organic compounds (VOC. Compared to other kinds of sensors, semiconductor sensors have certain advantages, including high sensitivity, fast response, simplicity, high reliability and low cost. In this work, ZnO and Sn-doped ZnO nanostructure materials with high surface nanosheet areas were synthesized using chemical bath deposition. The X-ray diffraction patterns could be indexed according to crystallinity mainly to a hexagonal wurzite ZnO structure. The scanning electron microscopy (SEM results showed that in all samples, the thin films after the addition of Sn consisted of many kinds of microstructure patterns on a nanoscale, with various sheet shapes. The sensor performance characterizations showed that VOC levels as low as 3 vol% of isopropyl alcohol (IPA and ethanol could be detected at sensitivities of 83.86% and 85.57%, respectively. The highest sensitivity of all sensors was found at an Sn doping of 1.4 at%. This high sensor sensitivity is a result of the high surface area and Sn doping, which in turn produced a higher absorption of the targeted gas.

  6. Probing defects in ZnO nanostructures by Photoluminescence and Positron Annihilation Spectroscopy

    Science.gov (United States)

    Ghosh, Manoranjan; Raychaudhuri, A. K.; Chaudhuri, S. K.; Das, Dipankar

    2008-03-01

    We have investigated defect related emission in the blue green region (2.2 eV -- 2.5 eV) of ZnO nanostructures having spherical (5 nm-15 nm) as well as those with hexagonal platelet and rod like morphologies (20nm-100 nm), synthesized by solvo-thermal route. This emission show anomalous size dependence. Emission energy near 2.2 eV, shifts to higher energy (2.5 eV) for increase in size beyond 20nm when shape of the nanostructures changes. This change in photoluminescence has a close correlation with the size (and shape) induced change in the positron trapping rate which is directly proportional to the defect concentration. The trapping rates show non-monotonous dependence on size. It increases initially as the size increases (5nm-15nm) and then decreases as the size increases beyond 20nm. While increase of the trapping rate on size reduction is expected due to accumulation of more defects at the surface, the initial dependence of the trapping rate on the size (below 20nm) is anomalous. The data are explained by the presence of defects like Zn vacancy and confinement due to size reduction.

  7. Nanostructured hematite thin films for photoelectrochemical water splitting

    Science.gov (United States)

    Maabong, Kelebogile; Machatine, Augusto G. J.; Mwankemwa, Benard S.; Braun, Artur; Bora, Debajeet K.; Toth, Rita; Diale, Mmantsae

    2018-04-01

    Nanostructured hematite thin films prepared by dip coating technique were investigated for their photoelectrochemical activity for generation of hydrogen from water splitting. Structural, morphological and optical analyses of the doped/undoped films were performed by X-ray diffraction, high resolution field emission-scanning electron microscopy, UV-vis spectrophotometry and Raman spectroscopy. The photoelectrochemical measurements of the films showed enhanced photoresponse and cathodic shift of the onset potential upon Ti doping indicating improved transfer of photoholes at the semiconductor-electrolyte interface. Films doped with 1 at% Ti produced 0.72 mA/cm2 at 1.23 V vs RHE which is 2 times higher than current density for the pure film (0.30 mA/cm2, at 1.23 V vs RHE). Gas chromatography analysis of the films also showed enhanced hydrogen evolution at 1 at% Ti with respect to pure film.

  8. Magnetoresistance of magnetically doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Behan, A J; Mokhtari, A; Blythe, H J; Fox, A M; Gehring, G A [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M, E-mail: G.A.Gehring@sheffield.ac.u [Division of Superconductivity and Magnetism, University of Leipzig, D-04103, Leipzig (Germany)

    2009-08-26

    Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.

  9. Nanocoatings size effect in nanostructured films

    CERN Document Server

    Aliofkhazraei, Mahmood

    2014-01-01

    Size effect in structures has been taken into consideration over the last years. In comparison with coatings with micrometer-ranged thickness, nanostructured coatings usually enjoy better and appropriate properties, such as strength and resistance. These coatings enjoy unique magnetic properties and are used with the aim of producing surfaces resistant against erosion, lubricant system, cutting tools, manufacturing hardened sporadic alloys, being resistant against oxidation and corrosion. This book reviews researches on fabrication and classification of nanostructured coatings with focus on size effect in nanometric scale. Size effect on electrochemical, mechanical and physical properties of nanocoatings are presented.

  10. Use of chemically synthesized ZnO thin film as a liquefied petroleum gas sensor

    International Nuclear Information System (INIS)

    Shinde, V.R.; Gujar, T.P.; Lokhande, C.D.; Mane, R.S.; Han, Sung-Hwan

    2007-01-01

    Liquefied petroleum gas (LPG) sensing properties of ZnO thin films consisting of sub-micron rods synthesized by chemical bath deposition (CBD) method are presented in depth. The scanning electron microscopy observation reveals that ZnO sub-micron rods are of hexagonal in phase grown perpendicular to the substrate surface. Due to large surface area, the ZnO thin films of sub-micron rods were sensitive to the explosive LPG, which was studied for different time depositions and for different operating temperatures. The maximum response of 28% at 673 K was recorded under the exposure of 10% of lower explosive level (LEL) of LPG. The ZnO thin films of sub-micron rods exhibited good sensitivity and rapid response-recovery characteristics towards LPG

  11. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Li Chensha; Loutfy, Rafik O [Department of Chemical Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada); Li Yuning; Wu Yiliang; Ong, Beng S [Materials Design and Integration Laboratory, Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario L5K 2L1 (Canada)], E-mail: lichnsa@163.com

    2008-06-21

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process.

  12. Performance improvement for solution-processed high-mobility ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Li Chensha; Loutfy, Rafik O; Li Yuning; Wu Yiliang; Ong, Beng S

    2008-01-01

    The fabrication technology of stable, non-toxic, transparent, high performance zinc oxide (ZnO) thin-film semiconductors via the solution process was investigated. Two methods, which were, respectively, annealing a spin-coated precursor solution and annealing a drop-coated precursor solution, were compared. The prepared ZnO thin-film semiconductor transistors have well-controlled, preferential crystal orientation and exhibit superior field-effect performance characteristics. But the ZnO thin-film transistor (TFT) fabricated by annealing a drop-coated precursor solution has a distinctly elevated linear mobility, which further approaches the saturated mobility, compared with that fabricated by annealing a spin-coated precursor solution. The performance of the solution-processed ZnO TFT was further improved when substituting the spin-coating process by the drop-coating process

  13. Ultraviolet Sensing by Al-doped ZnO Thin Films

    International Nuclear Information System (INIS)

    Rashid, A.R.A.; Menon, P.S.; Shaari, S.

    2011-01-01

    We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500 degree Celsius for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an improvement in electrical properties when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time. (author)

  14. Atomic layer deposition of Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  15. Optical and Morphological Properties of ZnO- and TiO2-Derived Nanostructures Synthesized via a Microwave-Assisted Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Nosipho Moloto

    2012-01-01

    Full Text Available A microwave-assisted hydrothermal method was used to synthesize ZnO and TiO2 nanostructures. The experimental results show that the method resulted in crystalline monodispersed ZnO nanorods that have pointed tips with hexagonal crystal phase. TiO2 nanotubes were also formed with minimum bundles. The mechanism for the formation of the tubes was validated by HRTEM results. The optical properties of both ZnO and TiO2 nanostructures showed characteristics of strong quantum confinement regime. The photoluminescence spectrum of TiO2 nanotubes shows good improvement from previously reported data.

  16. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    Science.gov (United States)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  17. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  18. Influence of PANI Additions on Methanol Sensing Properties of ZnO Thin Films

    International Nuclear Information System (INIS)

    Mohammad Hafizuddin Jumali; Norhashimah Ramli; Izura Izzuddin; Muhammad Yahaya; Muhamad Mat Salleh

    2011-01-01

    The influence of PANI additions on methanol sensing properties of ZnO thin films at room temperature had been investigated. Commercial poly aniline powder (PANI) was mixed into 3 mL ZnO solution in five different weight percentages namely 1.25, 2.50, 3.75, 5.00 and 6.25 % to obtain ZnO/ PANI composite solutions. These solutions were spin coated onto glass substrate to form thin films. Microstructural studies by FESEM indicated that ZnO/ PANI films showed porous structures with nano size grains. The thickness of the film increased from 55 to 256 nm, proportionate to increment of PANI. The presence of 2 adsorption peaks at ∼310 nm and ∼610 nm in UV-Vis spectrum proved that addition of PANI has modified the adsorption peak of ZnO film. Methanol vapour detection showed that addition of PANI into ZnO dramatically improved the sensing properties of the sensor. The sensors also exhibited good repeatability and reversibility. Sensor with the amount of PANI of 3.75 wt % exhibited the highest sensitivity with response and recovery time was about 10 and 80 s, respectively. The possible sensing mechanism of the sensor was also discussed in this article. (author)

  19. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  20. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  1. Structure and morphology of magnetron sputter deposited ultrathin ZnO films on confined polymeric template

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Ajaib [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Schipmann, Susanne [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Mathur, Aakash; Pal, Dipayan [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Sengupta, Amartya [Department of Physics, Indian Institute of Technology Delhi, Delhi 110016 (India); Klemradt, Uwe [II. Insatitute of Physics and JARA-FIT, RWTH Aachen University, 52056 Aachen (Germany); Chattopadhyay, Sudeshna, E-mail: sudeshna@iiti.ac.in [Discipline of Metallurgy Engineering and Materials Science, Indian Institute of Technology Indore, Indore 453552 (India); Discipline of Physics, Indian Institute of Technology Indore, Indore 453552 (India); Centre for Biosciences and Biomedical Engineering, Indian Institute of Technology Indore, Indore 453552 (India)

    2017-08-31

    Highlights: • Ultra-thin ZnO films grown on confined polymeric (polystyrene, PS) template. • XRR and GISAXS explore the surface/interfaces structure and morphology of ZnO/PS. • Insights into the growth mechanism of magnetron sputtered ZnO thin film on PS template. • Nucleated disk-like cylindrical particles are the basis of the formation of ZnO layers. • Effect of ZnO film thickness on room temperature PL spectra in ZnO/PS systems. - Abstract: The structure and morphology of ultra-thin zinc oxide (ZnO) films with different film thicknesses on confined polymer template were studied through X-ray reflectivity (XRR) and grazing incidence small angle X-ray scattering (GISAXS). Using magnetron sputter deposition technique ZnO thin films with different film thicknesses (<10 nm) were grown on confined polystyrene with ∼2R{sub g} film thickness, where R{sub g} ∼ 20 nm (R{sub g} is the unperturbed radius of gyration of polystyrene, defined by R{sub g} = 0.272 √M{sub 0}, and M{sub 0} is the molecular weight of polystyrene). The detailed internal structure, along the surface/interfaces and the growth direction of the system were explored in this study, which provides insight into the growth procedure of ZnO on confined polymer and reveals that a thin layer of ZnO, with very low surface and interface roughness, can be grown by DC magnetron sputtering technique, with approximately full coverage (with bulk like electron density) even in nm order of thickness, in 2–7 nm range on confined polymer template, without disturbing the structure of the underneath template. The resulting ZnO-polystyrene hybrid systems show strong ZnO near band edge (NBE) and deep-level (DLE) emissions in their room temperature photoluminescence spectra, where the contribution of DLE gets relatively stronger with decreasing ZnO film thickness, indicating a significant enhancement of surface defects because of the greater surface to volume ratio in thinner films.

  2. Improvement of physical properties of ZnO thin films by tellurium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

    2014-11-01

    Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

  3. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

    2011-01-01

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  4. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

    2011-10-15

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  5. Activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine

    International Nuclear Information System (INIS)

    Jayalakshmi, G.; Gopalakrishnan, N.; Balasubramanian, T.

    2013-01-01

    Highlights: ► Room temperature ferromagnetism (RTFM) is observed in surface functionalized ZnO films. ► Surface functionalization is a new approach to make ZnO as ferromagnetic. ► The RTFM is attributed to the interaction between the adsorbates and the surface of ZnO. ► The oxygen vacancies are passivated upon surface functionalization. - Abstract: In this paper, we report the activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine. The pure and surface functionalized ZnO films have been examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM) measurements. XRD measurements show that all the films have single phase and (0 0 2) preferred orientation. The chemical bonding of ZnO with thiol and amine molecules has been confirmed by XPS measurements. The quenching of visible emission in PL spectra indicates that the surface defects are passivated by functionalization with thiol and amine. Surface functionalization of ZnO films with thiol and amine induces robust room temperature ferromagnetism in ZnO films as evidenced from VSM measurements. It is concluded that the observed ferromagnetic behavior in functionalized ZnO films is attributed to the different electronegativity of the atom in the thiol (or amine) and the surface of ZnO.

  6. Photoluminescence quenching, structures, and photovoltaic properties of ZnO nanostructures decorated plasma grown single walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, Brahim, E-mail: brahim.aissa@mpbc.ca [University of Quebec, Centre Énergie, Matériaux et Télécommunications, INRS-EMT (Canada); Nedil, Mourad [Telebec Wireless Underground Communication Laboratory, UQAT (Canada); Belaidi, Abdelhak; Isaifan, Rima J. [Hamad Bin Khalifa University, Qatar Foundation, Qatar Environment and Energy Research Institute (Qatar); Bentouaf, Ali [University Hassiba Ben Bouali, Physics Department, Faculty of Science (Algeria); Fauteux, Christian; Therriault, Daniel [École Polytechnique de Montréal, Laboratory for Multiscale Mechanics (LM2), Mechanical Engineering Department (Canada)

    2017-05-15

    Zinc oxide (ZnO) nanostructures were successfully grown directly on single walled carbon nanotubes (SWCNT) template through the CO{sub 2} laser-induced chemical liquid deposition (LCLD) process. Photoluminescence (PL) of the deposited ZnO/SWCNT hybrid composites exhibits, at room temperature, a narrow near UV band located at 390 nm with no emission bands in the visible region, indicating a high degree of crystalline quality of the ZnO nanostructures. Moreover, when the relative SWCNT loads are varied within the composites, the PL intensity and the diffused optical reflectance diminish in comparison with those of ZnO alone, owing to the transfer of photo-excited electrons from ZnO to the SWCNT, and the enhancement of the optical absorbance, respectively. Finally, these ZnO/SWCNT hybrid composites are integrated into a heterojunction photovoltaic-based device, using PEDOT:PSS on ITO/glass substrate. The devices show an evident p–n junction behavior in the dark, and a clear I–V curve shift downward when illuminated with an open-circuit voltage of 1.1 V, a short circuit current density of 14.05 μA cm{sup −2}, and a fill factor of ∼35%. These results indicate that these composites fabricated via LCLD process could be promising for optoelectronic and energy-harvesting devices.

  7. On the possibility of room temperature ferromagnetism on chunk-shape BaSnO3/ZnO core/shell nanostructures

    Science.gov (United States)

    Rajamanickam, N.; Jayakumar, K.; Ramachandran, K.

    2018-04-01

    Core/shell BaSnO3/ZnO (BS-ZO) nanostructures were prepared by oxalate precipitation method and wet-chemical method. BaSnO3 (BSO) cubic perovskite structure and ZnO hexagonal wurtzite structure were confirmed by X-ray diffraction (XRD). The crystallite sizes is 23 nm, 29 nm and 27 nm for BSO, ZnO and BS-ZO, respectively. Chunk-shape and cuboids morphology observed from scanning electron microscopy (SEM) analysis. The magnetic properties were studied by VSM for bare and core-shell nano systems and the room temperature ferromagnetism observed for core-shell nanostructures. The BSO/ZnO shows enhanced coercivity and saturated magnetization as compared with BSO and ZnO nanostructures.

  8. Microstructure of ZnO thin films deposited by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reed, A.N., E-mail: amber.reed.5@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Shamberger, P.J. [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Voevodin, A.A., E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States)

    2015-03-31

    High power impulse magnetron sputtering was used to deposit thin (~ 100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong crystallinity, highly aligned (002) texture and low surface roughness (root mean square roughness less than 10 nm), as determined by X-ray diffraction, transmission electron microscopy, scanning electron microscopy and atomic force spectroscopy measurements. Deposition pressure and target–substrate distance had the greatest effect on film microstructure. The degree of alignment in the films was strongly dependent on the gas pressure. Deposition at pressures less than 0.93 Pa resulted in a bimodal distribution of grain sizes. An initial growth layer with preferred orientations (101) and (002) parallel to the interface was observed at the film–substrate interface under all conditions examined here; the extent of that competitive region was dependent on growth conditions. Time-resolved current measurements of the target and ion energy distributions, determined using energy resolved mass spectrometry, were correlated to film microstructure in order to investigate the effect of plasma conditions on film nucleation and growth. - Highlights: • Low temperature growth of nanocrystalline zinc oxide (ZnO) films. • ZnO films had a highly (002) textured, smooth, dense microstructure. • Dominant (002) orientation of films was pressure dependent. • Interfacial (101)/(002) mixed orientation layer controlled by substrate location.

  9. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  10. Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Swati Arora

    2017-01-01

    Full Text Available Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te and bismuth (Bi were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD and scanning electron microscopy (SEM to show granular growth.

  11. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

    2017-03-31

    Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

  12. Structural and optical properties of pentacene films grown on differently oriented ZnO surfaces

    International Nuclear Information System (INIS)

    El Helou, M; Lietke, E; Helzel, J; Heimbrodt, W; Witte, G

    2012-01-01

    Pentacene films have been grown on two polar zinc oxide surfaces, i.e., ZnO(0001) and ZnO(0 0 0 1-bar ), as well as on the mixed-terminated ZnO(1 0 1-bar 0) and are characterized by means of atomic force microscopy (AFM), x-ray diffraction (XRD), and thermal desorption spectroscopy (TDS). In all cases, pentacene aggregates in an upright orientation without any evidence for the formation of an interface stabilized wetting layer. Additional films deposited on a highly-defective, oxygen-depleted ZnO(0 0 0 1-bar ) reveal no altered growth mode. Nearly identical optical absorption spectra have been measured for all films, thus corroborating a weak molecule-substrate interaction. Upon cooling, however, a slightly different relaxation behavior could be resolved for pentacene films on polar ZnO surfaces compared to pentacene on the mixed-terminated ZnO(1 0 1-bar 0) surface.

  13. Photocatalytic Performance of ZnO: Al Films under Different Light Sources

    Directory of Open Access Journals (Sweden)

    Prashant Pradhan

    2012-01-01

    Full Text Available ZnO and Al doped ZnO films were produced by spray pyrolysis. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, UV-vis spectroscopy, and photoluminescence. Their photocatalytic activity was evaluated by the decomposition of the methyl orange dye using different light sources: ultraviolet light, artificial white light, and direct sunlight. The films were also tested under darkness for comparison. The ZnO films were able to degrade the test pollutant under UV and sunlight in more than a 60% after 180 min of irradiation and a scarce degradation was obtained using white light. However, the Al doped ZnO films presented a very high degradation rate not only under UV and sunlight (100% degradation, but also under white light (90% degradation after the same irradiation time. An unexpected high degradation was also obtained in the dark, which indicates that a nonphotonic process is taking place parallel to the photocatalytic process. This can be due to the extra electrons—provided by the aluminum atoms—that migrate to the surface and produce radicals favoring the decomposition process even in the dark. The high activity achieved by the ZnO: Al films under natural conditions can be potentially applied to water treatment processes.

  14. Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

    International Nuclear Information System (INIS)

    Wang Qingtao; Wang Guanzhong; Jie Jiansheng; Han Xinhai; Xu Bo; Hou, J.G.

    2005-01-01

    (001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 deg. C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (- 0.6∼- 0.8 V). When more negative potential (- 1.0∼- 1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials - 0.6∼- 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E g ) of the ZnO film prepared at - 1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH) 2 from the film after annealing

  15. Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles

    International Nuclear Information System (INIS)

    Ton-That, Cuong; Phillips, Matthew R.; Nguyen, Thien-Phap

    2008-01-01

    Luminescence properties of nanocomposites consisting of ZnO nanoparticles in a conjugated polymer, poly [2-methoxy-5-(2'-ethyl hexyloxy)-phenylene vinylene] (MEH-PPV), were investigated. Photoluminescence measurements reveal a blue shift in the emission spectrum of MEH-PPV upon incorporation of ZnO nanoparticles into the polymer film while the emission is increasingly quenched with increasing ZnO concentration. In contrast, the structure of the polymer and its conjugation length are not affected by the presence of ZnO nanoparticles (up to 16 wt% ZnO) as revealed by Raman spectroscopy. The blue shift and photoluminescence quenching are explained by the separation of photogenerated electron-hole pairs at the MEH-PPV/ZnO interface and the charging of the nanoparticles

  16. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Boyadjiev, S.I., E-mail: boiajiev@gmail.com [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Georgieva, V. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Yordanov, R. [Department of Microelectronics, Technical University of Sofia, 8 Kliment Ohridski Blvd., 1756 Sofia (Bulgaria); Raicheva, Z. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Szilágyi, I.M. [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Budapest University of Technology and Economics, Department of Inorganic and Analytical Chemistry, Szent Gellért tér 4, Budapest, H-1111 (Hungary)

    2016-11-30

    Highlights: • For the first time the gas sensing towards NO{sub 2} of very thin ALD ZnO films is studied. • The very thin ALD ZnO films showed excellent sensitivity to NO{sub 2} at room temperature. • These very thin film ZnO-based QCM sensors very well register even low concentrations. • The sensors have fully reversible sorption and are able to be recovered in short time. • Described fast and cost-effective ALD deposition of ZnO thin films for QCM gas sensor. - Abstract: Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO{sub 2} was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO{sub 2} already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO{sub 2}.

  17. Characteristics of ZnO nanostructures produced with [DMIm]BF{sub 4} using ultrasonic radiation

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, I. B. Abdul; Ayob, M. T. M.; Ishak, I. S.; Mohd Lawi, R. L.; Isahak, W. N. R. W.; Hamid, M. H. N. Abd; Othman, N. K.; Radiman, S. [School of Applied Physics, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); School of Chemistry and Food Technology, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); School of Applied Physics, Faculty of Science and Technology (FST), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia)

    2012-11-27

    Great interests in metallic oxides have emerged because of the promising properties of these materials for various applications such as solar cells and sensors. ZnO nanostructures with different morphologies were successfully synthesized from Zn(CH{sub 3}COO){sub 2} Bullet 2H{sub 2}O, NaOH and room temperature ionic liquid (RTIL) 1-decyl-3-methylimidazolium tetrafluoroborate, [DMIm][BF{sub 4}] with ultrasound irradiation. Parameters such as the effect of sonication time (30, 60 and 90 minutes) and Zn(Ac){sub 2} precursor to [DMIm][BF{sub 4}] ratios of 3:5, 5:5 and 5:3 were investigated. X-ray diffraction patterns revealed that the ZnO nanocrystals were hexagonal zincite crystalline in structure. The band gap energies (E{sub g}) were estimated to be 3.35-3.55 eV from the UV-Visible spectrum. The solution with the highest ratio of Zn was analysed with photoluminescence spectroscopy, which exhibited peaks at 362, 403, 468 and 539 nm, at room temperature. The micrographs of field emission scanning electron microscopy and transmission electron microscopy showed that the synthesis products were spherical (30-60 nm), spindle ({approx}10 Multiplication-Sign 70 nm for width Multiplication-Sign length) and whisker-like (100-200 nm), with their dimensions decreasing systematically with increased sonication time. Chemical compositions were approximated at 1:1 for Zn and O, estimated by electron dispersive x-ray spectrum.

  18. Piezoelectric nanogenerators based on ZnO and M13 Bacteriophage nanostructures (Conference Presentation)

    Science.gov (United States)

    Shin, Dong-Myeong; Kim, Kyujungg; Hong, Suck Won; Oh, Jin-Woo; Kim, Hyung Kook; Hwang, Yoon-Hwae

    2016-09-01

    Recently, the portable and wearable electronic devices, operated in the power range of microwatt to miliwatt, become available thank to the nanotechnology development and become an essential element for a comfortable life. Our recent research interest mainly focuses on the fabrication of piezoelectric nanogenerators based on smart nanomaterials such as zinc oxide novel nanostructure, M13 bacteriophage. In this talk, we present a simple strategy for fabricating the freestanding ZnO nanorods/graphene/ZnO nanorods double sided heterostructures. The characterization of the double sided heterostructures by using SEM, and Raman scattering spectroscopy reveals the key process and working mechanism of a formation of the heterostructure. The mechanism is discussed in detail in term of the decomposed seed layer and the vacancy defect of graphene. The approach consists of a facile one-step fabrication process and could achieve ZnO coverage with a higher number density than that of the epitaxial single heterostructure. The resulting improvement in the number density of nanorods has a direct beneficial effect on the double side heterostructured nanogenerator performance. The total output voltage and current density are improved up to 2 times compared to those of a single heterostructure due to the coupling of the piezoelectric effects from both upward and downward grown nanorods. The facile one-step fabrication process suggests that double sided heterostructures would improve the performance of electrical and optoelectrical device, such as touch pad, pressure sensor, biosensor and dye-sensitized solar cells. Further, ioinspired nanogenerators based on vertically aligned phage nanopillars are inceptively demonstrated. Vertically aligned phage nanopillars enable not only a high piezoelectric response but also a tuneable piezoelectricity. Piezoelectricity is also modulated by tuning of the protein's dipoles in each phage. The sufficient electrical power from phage nanopillars thus

  19. DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

    2016-07-01

    Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

  20. Low-temperature synthesis of rose-like ZnO nanostructures using surfactin and their photocatalytic activity.

    Science.gov (United States)

    Reddy, A Satyanarayana; Kuo, Yi-Hao; Atla, Shashi B; Chen, Chien-Yen; Chen, Chien-Cheng; Shih, Ruey-Chyuan; Chang, Young-Fo; Maity, Jyoti Prakash; Chen, How-Ji

    2011-06-01

    Rose-like ZnO nanostructures were synthesized by the precipitation method using a biosurfactant (surfactin) as a templating-agent stabilizer. The concentration of surfactin in the precursor solution significantly influenced the thickness and density of the petals in the rose-like structures, and all samples were of a wurtzite phase. The thickness of the petal was found to decrease with increasing surfactin concentration. The average thickness of the petals was found to be between 10 and 13 nm. Photocatalytic degradation of methylene blue using rose-like ZnO nanostuctures was investigated, and the morphology, density and thickness of the ZnO petals were found to influence the photodegradation activity. The samples with loosely-spread petals, or plate-like ZnO structures, brought about the strongest photodegradation in comparison with the dense rose-like structures. The greater activity of the loose-petal structures was correlated with their higher absorption in the UV region in comparison with the other samples. The ZnO samples prepared using low surfactin concentrations had higher rate constant values, i.e., 9.1 x 10(-3) min(-1), which revealed that the photodegradation of methylene blue under UV irradiation progressed by a pseudo first-order kinetic reaction.

  1. Eosin Yellowish Dye-Sensitized ZnO Nanostructure-Based Solar Cells Employing Solid PEO Redox Couple Electrolyte

    Directory of Open Access Journals (Sweden)

    S. S. Kanmani

    2012-01-01

    Full Text Available ZnO nanostructures are synthesized by low-temperature methods, and they possess polycrystalline hexagonal wurtzite structure with preferential c-axial growth. Morphological study by SEM shows the presence of ~30 nm sized spherical-shaped ZnO nanoparticle, the branched flower-like ZnO composed of many nanorods (length: 1.2 to 4.2 μm and diameter: 0.3 to 0.4 μm, and ~50 nm diameter of individual ZnO nanorods. Reduction in photoemission intensity of nanorods infers the decrease in electron-hole recombination rate, which offers better photovoltaic performance. The dye-sensitized solar cell (DSSC based on ZnO nanorods sensitized with Eosin yellowish dye exhibits a maximum optimal energy conversion efficiency of 0.163% compared to that of nanoparticles and nanoflowers, due to better dye loading and direct conduction pathway for electron transport.

  2. Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

    International Nuclear Information System (INIS)

    Herrero, J.; Guillen, C.

    2004-01-01

    The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

  3. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    Science.gov (United States)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  4. Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

    Science.gov (United States)

    Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

    2009-08-01

    Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

  5. Scintillation characteristic of In, Ga-doped ZnO thin films with different dopant concentrations

    International Nuclear Information System (INIS)

    Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira; Sekiwa, Hideyuki

    2011-01-01

    The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In 3+ - and Ga 3+ -doped ZnO thin films with different dopant concentrations. In 3+ -(25, 55, and 141 ppm) and Ga 3+ -(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In 3+ and Ga 3+ in the films. However, the scintillation light yield under 241 Am α-ray excitation reduced when concentration of In 3+ and Ga 3+ in the ZnO films was high. (author)

  6. Zinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Hongtao Ren

    2012-01-01

    Full Text Available Undoped ZnO thin films are prepared by polymer-assisted deposition (PAD and treated by postannealing at different temperatures in oxygen or forming gases (95%  Ar+5% H2. All the samples exhibit ferromagnetism at room temperature (RT. SQUID and positron annihilation measurements show that post-annealing treatments greatly enhance the magnetizations in undoped ZnO samples, and there is a positive correlation between the magnetization and zinc vacancies in the ZnO thin films. XPS measurements indicate that annealing also induces oxygen vacancies that have no direct relationship with ferromagnetism. Further analysis of the results suggests that the ferromagnetism in undoped ZnO is induced by Zn vacancies.

  7. Properties of Nb-doped ZnO transparent conductive thin films ...

    Indian Academy of Sciences (India)

    Administrator

    by rf magnetron sputtering using a high quality ceramic target ... Guangxi Key Laboratory of Information Materials, Guilin University of Electronic ... films are highly textured along the c axis and perpendicular to the surface of the substrate. ... ZnO films; Nb-doped; magnetron sputtering; optical and electrical properties. 1.

  8. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  9. Characteristics of hydrogen co-doped ZnO : Al thin films

    International Nuclear Information System (INIS)

    Lee, S H; Lee, T S; Lee, K S; Cheong, B; Kim, W M; Kim, Y D

    2008-01-01

    ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al 2 O 3 on Corning glass at a substrate temperature of 150 deg. C with Ar and H 2 /Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H 2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H 2 . The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H 2 content in sputter gas. Annealing at 300 deg. C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications

  10. Pulsed laser deposition of aluminum-doped ZnO films at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Thestrup Nielsen, Birgitte

    2004-01-01

    Conducting, transparent films of aluminium-doped ZnO (AZO) have been produced at the laser wavelength 355 nm. The most critical property, the electric resistivity, is up to a factor of 8 above that for films produced at shorter wavelengths. In contrast, the transmission of visible light through...

  11. Properties and characterization of bionanocomposite films prepared with various biopolymers and ZnO nanoparticles.

    Science.gov (United States)

    Kanmani, Paulraj; Rhim, Jong-Whan

    2014-06-15

    This study was aimed to develop biopolymer based antimicrobial films for active food packaging and to reduce environmental pollution caused by accumulation of synthetic packaging. The ZnO NPs were incorporated as antimicrobials into different biopolymers such as agar, carrageenan and CMC. Solvent casting method was performed to prepare active nanocomposite films. Methods such as FE-SEM, FT-IR and XRD were used to characterize resulting films. Physical, mechanical, thermal and antimicrobial properties were also examined. Remarkable surface morphological differences were observed between control and nanocomposite films. The crystallinity of ZnO was confirmed by XRD analysis. The addition of ZnO NPs increased color, UV barrier, moisture content, hydrophobicity, elongation and thermal stability of the films, while decreased WVP, tensile strength and elastic modulus. ZnO NPs impregnated films inhibited growth of L. monocytogenes and E. coli. So these newly prepared nanocomposite films can be used as active packaging film to extend shelf-life of food. Copyright © 2014 Elsevier Ltd. All rights reserved.

  12. Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

    International Nuclear Information System (INIS)

    Melikhova, O; Čížek, J; Procházka, I; Kužel, R; Novotný, M; Bulír, J; Lancok, J; Anwand, W; Brauer, G; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P

    2013-01-01

    ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20–100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.

  13. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    International Nuclear Information System (INIS)

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  14. Low Temperature Hydrothermal Growth of ZnO Nanorod Films for Schottky Diode Application

    International Nuclear Information System (INIS)

    Singh, Shaivalini; Park, Si-Hyun

    2016-01-01

    The purpose of this research is to report on the fabrication and characterizations of Pd/ZnO nanorod-based Schottky diodes for optoelectronic applications. ZnO nanorods (NRs) were grown on silicon (Si) substrates by a two step hydrothermal method. In the first step, a seed layer of pure ZnO was deposited from a solution of zinc acetate and ethyl alcohol, and then in the second step, the main growth of the ZnO NRs was done over the seed layer. The structural morphology and optical properties of the ZnO NR films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. The electrical characterization of the Pd/ZnO NR contacts was studied using a current-voltage (I-V) tool. The ZnO NR films exhibited a wurtzite ZnO structure,and the average length of the ZnO NRs were in the range of 750 nm to 800 nm. The values of ideality factor, turn-on voltage and reverse saturation current were calculated from the I-V characteristics of Pd/ZnO NR-based Schottky diodes. The study demonstrates that Pd/ZnO NR Schottky contacts fabricated by a simple and inexpensive method can be used as a substitute for conventional Schottky diodes for optoelectronic applications.

  15. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  16. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    International Nuclear Information System (INIS)

    Ahumada-Lazo, R.; Torres-Martínez, L.M.; Ruíz-Gómez, M.A.; Vega-Becerra, O.E.

    2014-01-01

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media

  17. Controlling growth rate anisotropy for formation of continuous ZnO thin films from seeded substrates

    International Nuclear Information System (INIS)

    Zhang, R H; Slamovich, E B; Handwerker, C A

    2013-01-01

    Solution-processed zinc oxide (ZnO) thin films are promising candidates for low-temperature-processable active layers in transparent thin film electronics. In this study, control of growth rate anisotropy using ZnO nanoparticle seeds, capping ions, and pH adjustment leads to a low-temperature (90 ° C) hydrothermal process for transparent and high-density ZnO thin films. The common 1D ZnO nanorod array was grown into a 2D continuous polycrystalline film using a short-time pure solution method. Growth rate anisotropy of ZnO crystals and the film morphology were tuned by varying the chloride (Cl − ) ion concentration and the initial pH of solutions of zinc nitrate and hexamethylenetetramine (HMTA), and the competitive adsorption effects of Cl − ions and HMTA ligands on the anisotropic growth behavior of ZnO crystals were proposed. The lateral growth of nanorods constituting the film was promoted by lowering the solution pH to accelerate the hydrolysis of HMTA, thereby allowing the adsorption effects from Cl − to dominate. By optimizing the growth conditions, a dense ∼100 nm thickness film was fabricated in 15 min from a solution of [Cl − ]/[Zn 2+ ] = 1.5 and pH= 4.8 ± 0.1. This film shows >80% optical transmittance and a field-effect mobility of 2.730 cm 2 V −1 s −1 at zero back-gate bias. (paper)

  18. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  19. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  20. Preparation and characterization of ZnO transparent semiconductor thin films by sol-gel method

    International Nuclear Information System (INIS)

    Tsay, Chien-Yie; Fan, Kai-Shiung; Chen, Sih-Han; Tsai, Chia-Hao

    2010-01-01

    Transparent semiconductor thin films of zinc oxide (ZnO) were deposited onto alkali-free glass substrates by the sol-gel method and spin-coating technique. In this study, authors investigate the influence of the heating rate of the preheating process (4 or 10 o C/min) on the crystallization, surface morphology, and optical properties of sol-gel derived ZnO thin films. The ZnO sol was synthesized by dissolving zinc acetate dehydrate in ethanol, and then adding monoethanolamine. The as-coated films were preheated at 300 o C for 10 min and annealed at 500 o C for 1 h in air ambiance. Experimental results indicate that the heating rate of the preheating process strongly affected the surface morphology and transparency of ZnO thin film. Specifically, a heating rate of 10 o C/min for the preheating process produces a preferred orientation along the (0 0 2) plane and a high transmittance of 92% at a wavelength of 550 nm. Furthermore, this study reports the fabrication of thin-film transistors (TFTs) with a transparent ZnO active channel layer and evaluates their electrical performance.

  1. Effect of annealing on electrical properties of plasmatron deposited ZnO films

    International Nuclear Information System (INIS)

    Joa, Sang Beom; Penkov, Oteksiy V.; Plaksin, Vadim Yu; Mansur, Rakib; Kim, Ji Hun; Lee, Heon Ju

    2009-01-01

    Transparent conductive zinc oxide (ZnO) has been extensively studied in recent several years because they have very interesting properties. Besides this, zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technology like RF sputtering, pyrolysis and metal-organic CVD don't completely satisfy the industrial requirements. In our previous publications the new perspective ZnO deposition technology based DC Arc Plasmatron was described. This technology has several advantages (low cost, high deposition rate, low substrate temperature). Currently, films deposited using this technology has can be used only as protective or insulation coatings because of very high resistance. Applying of plasmatron technology in the microelectronics or solar cell production requires the improvement of electrical properties of the films. This can be achieved by optimization of deposition parameters, using of doping, or by post-deposition treatment such as annealing, or by combination of mentioned. It was shown that proposed technology can be used for the deposition of pure ZnO film with good electrical and optical properties. Proposed technology has several disadvantages which can be overcome in the near-term outlook

  2. Engineering Nano-Structured Multiferroic Thin Films

    Science.gov (United States)

    Cheung, Pui Lam

    Multiferroics exhibit remarkable tunabilities in their ferromagnetic, ferroelectric and magnetoelectric properties that provide the potential in enabling the control of magnetizations by electric field for the next generation non-volatile memories, antennas and motors. In recent research and developments in integrating single-phase ferroelectric and ferromagnetic materials, multiferroic composite demonstrated a promising magnetoelectric (ME) coupling for future applications. Atomic layer deposition (ALD) technique, on the other hand, allows fabrications of complex multiferroic nanostructures to investigate interfacial coupling between the two materials. In this work, radical-enhanced ALD of cobalt ferrite (CFO) and thermal ALD of lead zirconate titanate (PZT) were combined in fabricating complex multiferroic architectures in investigating the effect of nanostructuring and magnetic shape anisotropy on improving ME coupling. In particular, 1D CFO nanotubes and nanowires; 0D-3D CFO/PZT mesoporous composite; and 1D-1D CFO/PZT core-shell nanowire composite were studied. The potential implementation of nanostructured multiferroic composites into functioning devices was assessed by quantifying the converse ME coupling coefficient. The synthesis of 1D CFO nanostructures was realized by ALD of CFO in anodic aluminum oxide (AAO) membranes. This work provided a simple and inexpensive route to create parallel and high aspect ratio ( 55) magnetic nanostructures. The change in magnetic easy axis of (partially filled) CFO nanotubes from perpendicular to parallel in (fully-filled) nanowires indicated the significance of the geometric factor in controlling magnetizations and ME coupling. The 0D-3D CFO/PZT mesoporous composite demonstrated the optimizations of the strain transfer could be achieved by precise thickness control. 100 nm of mesoporous PZT was synthesized on Pt/TiOx/SiO2/Si using amphiphilic diblock copolymers as a porous ferroelectric template (10 nm pore diameter) for

  3. Electrochemical preparation of hematite nanostructured films for solar hydrogen production

    Directory of Open Access Journals (Sweden)

    Ebadzadeh T.

    2012-10-01

    Full Text Available Photoelectrochemical water splitting is a clean and promising technique for using a renewable source of energy, i.e., solar energy, to produce hydrogen. In this work electrochemical formation of iron oxyhydroxide and its conversion to hematite (α- Fe2O3 through thermal treatment have been studied. Oxyhydroxide iron compounds have been prepared onto SnO2/F covered glass substrate by potential cycling with two different potential sweep rate values; then calcined at 520 °C in air to obtain α-Fe2O3 nanostrutured films for their implementation as photoanode in a photoelectrochemical cell. X-ray diffraction analysis allowed finding that iron oxides films have nanocrystalline character. Scanning electron microscopy revealed that films have nanostructured morphology. The obtained results are discussed considering the influence of potential sweep rate employed during the preparation of iron oxyhydroxide film on optical, structural and morphological properties of hematite nanostructured films. Results show that films have acceptable characteristics as photoanode in a photoelectrochemical cell for hydrogen generation from water.

  4. Microwave-assisted Facile and Ultrafast Growth of ZnO Nanostructures and Proposition of Alternative Microwave-assisted Methods to Address Growth Stoppage

    Science.gov (United States)

    Rana, Abu Ul Hassan Sarwar; Kang, Mingi; Kim, Hyun-Seok

    2016-04-01

    The time constraint in the growth of ZnO nanostructures when using a hydrothermal method is of paramount importance in contemporary research, where a long fabrication time rots the very essence of the research on ZnO nanostructures. In this study, we present the facile and ultrafast growth of ZnO nanostructures in a domestic microwave oven within a pressurized environment in just a few minutes. This method is preferred for the conventional solution-based method because of the ultrafast supersaturation of zinc salts and the fabrication of high-quality nanostructures. The study of the effect of seed layer density, growth time, and the solution’s molar concentration on the morphology, alignment, density, and aspect ratio of ZnO nanorods (ZNRs) is explored. It is found in a microwave-assisted direct growth method that ~5 mins is the optimum time beyond which homogeneous nucleation supersedes heterogeneous nucleation, which results in the growth stoppage of ZNRs. To deal with this issue, we propound different methods such as microwave-assisted solution-replacement, preheating, and PEI-based growth methods, where growth stoppage is addressed and ZNRs with a high aspect ratio can be grown. Furthermore, high-quality ZnO nanoflowers and ZnO nanowalls are fabricated via ammonium hydroxide treatment in a very short time.

  5. Enhanced luminescence properties of hybrid Alq{sub 3}/ZnO (organic/inorganic) composite films

    Energy Technology Data Exchange (ETDEWEB)

    Cuba, M.; Muralidharan, G., E-mail: muraligru@gmail.com

    2014-12-15

    Pristine tris-(8-hydroxyquionoline)aluminum(Alq{sub 3}) and (Alq{sub 3}/ZnO hybrid) composites containing different weight percentages (5 wt%, 10 wt%, 20 wt%, 30 wt%, 40 wt% and 50 wt%) of ZnO in Alq{sub 3} were synthesized and coated on to a glass substrate using the dip coating method. The optimum concentration of ZnO in Alq{sub 3} films to get the best luminescence yield has been identified. XRD pattern reveals the amorphous nature of pure Alq{sub 3} film. The Alq{sub 3} films containing different weight percentages of ZnO show the presence of crystalline ZnO in Alq{sub 3}/ZnO composite films. The FTIR spectrum confirms the formation of quinoline with absorption in the region 600−800 cm{sup −1}. The hybrid Alq{sub 3}/ZnO composite films indicate the presence of Zn−O vibration band along with the corresponding Alq{sub 3} band. The band gap (HOMO–LUMO) of Alq{sub 3} film was calculated using absorption spectra and it is 2.87 eV for pristine films while it is 3.26 eV, 3.21 eV, 3.14 eV, 3.10 eV, 3.13 eV and 3.20 eV for the composite films containing 5–50 wt% of ZnO. The photoluminescence (PL) spectra of Alq{sub 3} films show a maximum PL intensity at 514 nm when excited at 390 nm. The ZnO incorporated composite films (Alq{sub 3}/ZnO) exhibit an emission in 485 nm and 514 nm. The composite films containing 30 wt% of ZnO exhibit maximum luminescence yield. - Highlights: • The pure Alq{sub 3} and Alq{sub 3}/ZnO composite were synthesized and coated on to a glass substrate using dip coating method. • Alq{sub 3}/ZnO composite film containing 30 wt% of ZnO exhibits two fold increases in luminescence intensity. • The shielding effect of ZnO on the Alq{sub 3} material suppresses the interactions among the host molecules in the excited state. • This leads to enhance the luminescence intensity in composite films.

  6. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  7. Excimer laser processing of ZnO thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Winfield, R.J.; Koh, L.H.K.; O'Brien, Shane; Crean, Gabriel M.

    2007-01-01

    ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C 2 H 3 O 2 ) 2 ], monoethanolamine [H 2 NC 2 H 4 OH] and isopropanol. The deposited films were dried at 50 and 300 deg. C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm -2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 deg. C for the formation of crystalline ZnO

  8. Facile solvothermal synthesis of abnormal growth of one-dimensional ZnO nanostructures by ring-opening reaction of polyvinylpyrrolidone

    Energy Technology Data Exchange (ETDEWEB)

    Xu, G., E-mail: gxu@alum.imr.ac.cn; Wang, X.L.; Liu, G.Z.

    2015-02-28

    Graphical abstract: - Highlights: • Facile solvothermal synthesis of ZnO nanostructures in super high alkaline alcoholic condition. • The exact role and chemical transformations of PVP in solvothermal synthesis of ZnO nanostructures was revealed. • Mechanism of abnormal growth of ZnO nanopyramids was proposed based on ring-opening reaction of PVP. - Abstract: Abnormal growth of one-dimensional (1-D) ZnO nanostructures (NSs) have been accomplished with the assistance of polyvinylpyrrolidone (PVP) under a super high alkaline alcoholic solvothermal condition. The products were characterized by transmission electron microscopy (TEM), thermogravimetric analysis (TGA), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and proton nuclear magnetic resonance ({sup 1}H NMR) spectroscopy. The effect of synthetic conditions, such as reaction temperature and the addition of PVP, on the morphologies of ZnO products were investigated. The results show that PVP molecules had the significant role in the transformation of morphologies of ZnO NSs ranging from nanorods, nanoparticles to pyramids, as well as flower-like assembly features. The possible growth mechanism of ZnO pyramids was proposed based on ring-opening reaction of PVP.

  9. ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

    Energy Technology Data Exchange (ETDEWEB)

    Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

    2016-08-01

    Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

  10. Photovoltaic properties of undoped ZnO thin films prepared by the spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

    2009-07-01

    Zinc oxide (ZnO) can be used as a window material, transparent electrode and active layer in different types of solar cells, UV emitters, and UV sensors. In addition to being low cost, ZnO is more abundant than indium tin oxide. ZnO is non toxic and has a high chemical stability in reduction environments. When ZnO films are made without any intentional doping, they exhibit n-type conductivity. ZnO thin films can be prepared by reactive sputtering, laser ablation, chemical-vapour deposition, laser molecular-beam epitaxy, thermal evaporation, sol-gel, atomic layer deposition and spray pyrolysis, with the latter being simple, inexpensive and adaptable to large area depositions. In this work ZnCl{sub 2} was used as a source of Zn where it was dissolved in distilled water. The structural, electrical and optical properties of the films were investigated due to their important characteristic for solar cell applications. Polycrystalline ZnO thin films were deposited on glass substrate by spray pyrolysis using a home-made spraying system at substrate temperature of 450 degrees C. The films were characterized by recording and analyzing their I-V plots, their transmittance, X-ray diffraction and SEM micrographs. There resistivity was found to be about 200 ohms per cm and their bandgap energy about 3.27 eV. X-ray diffraction patterns revealed that the films have a hexagonal wurtzite structure and are highly ordered with a preferential orientation (002). SEM images revealed that the substrates are continuously covered and the surface of the film is uniform. 16 refs., 4 figs.

  11. Correlation between structural and electrical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Asadov, A.; Gao, W.; Li, Z.; Lee, J.; Hodgson, M.

    2005-01-01

    Thin ZnO films were deposited by radio frequency (r.f.) and direct current (d.c.) magnetron sputtering techniques onto glass substrates. Microstructural and electrical properties of ZnO films were studied using X-ray diffractometer (XRD), scanning electron microscope (SEM) and resistivity measurements. It was found that the size of the crystallites in the d.c. deposited films increased with increasing film thickness, while the crystallite size of r.f. deposited films remained unchanged. The d.c. deposited grains also had much stronger orientation related to the substrate than the r.f. films. XRD data indicated that the thin films with d<350 nm for r.f. and <750 nm for d.c. films have a very high degree of ZnO nonstoichiometry. This agreed well with the conductivity measurements and R(T) behaviour of the films with different resistance R. It was also found that the electrical resistivity of the samples increased exponentially with the thickness of films

  12. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  13. Correlation Spectroscopy of Surfaces, Thin Films, and Nanostructures

    CERN Document Server

    Berakdar, Jamal

    2004-01-01

    Here, leading scientists present an overview of the most modern experimental and theoretical methods for studying electronic correlations on surfaces, in thin films and in nanostructures. In particular, they describe in detail coincidence techniques for studying many-particle correlations while. critically examining the informational content of such processes from a theoretical point viewpoint. Furthermore, the book considers the current state of incorporating many-body effects into theoretical approaches. Covered topics:. -Auger-electron photoelectron coincidence experiments and theories. -Co

  14. Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Domenico D’Agostino

    2017-05-01

    Full Text Available Piezoelectricity and charge storage of undoped and Co-doped ZnO thin films were investigated by means of PiezoResponse Force Microscopy and Kelvin Probe Force Microscopy. We found that Co-doped ZnO exhibits a large piezoelectric response, with the mean value of piezoelectric matrix element d33 slightly lower than in the undoped sample. Moreover, we demonstrate that Co-doping affects the homogeneity of the piezoelectric response, probably as a consequence of the lower crystalline degree exhibited by the doped samples. We also investigate the nature of the interface between a metal electrode, made up of the PtIr AFM tip, and the films as well as the phenomenon of charge storage. We find Schottky contacts in both cases, with a barrier value higher in PtIr/ZnO than in PtIr/Co-doped ZnO, indicating an increase in the work function due to Co-doping.

  15. ZnO based transparent conductive oxide films with controlled type of conduction

    Energy Technology Data Exchange (ETDEWEB)

    Zaharescu, M., E-mail: mzaharescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Mihaiu, S., E-mail: smihaiu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Toader, A. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Atkinson, I., E-mail: irinaatkinson@yahoo.com [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Calderon-Moreno, J.; Anastasescu, M.; Nicolescu, M.; Duta, M.; Gartner, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Vojisavljevic, K.; Malic, B. [Institute Jožef Stefan, Ljubljana (Slovenia); Ivanov, V.A.; Zaretskaya, E.P. [State Scientific and Production Association “Scientific-Practical Materials Research Center of the National Academy of Science Belarus, P. Brovska str.19, 220072, Minsk (Belarus)

    2014-11-28

    The transparent conductive oxide films with controlled type of conduction are of great importance and their preparation is intensively studied. In our work, the preparation of such films based on doped ZnO was realized in order to achieve controlled type of conduction and high concentration of the charge carriers. Sol–gel method was used for films preparation and several dopants were tested (Sn, Li, Ni). Multilayer deposition was performed on several substrates: SiO{sub 2}/Si wafers, silica-soda-lime and/or silica glasses. The structural and morphological characterization of the obtained films were done by scanning electron microscopy, X-ray diffraction, X-ray fluorescence, X-ray photoelectron spectroscopy and atomic force microscopy respectively, while spectroscopic ellipsometry and transmittance measurements were done for determination of optical properties. The selected samples with the best structural, morphological and optical properties were subjected to electrical measurement (Hall and Seebeck effect). In all studied cases, samples with good adherence and homogeneous morphology as well as monophasic wurtzite type structure were obtained. The optical constants (refractive index and extinction coefficient) were calculated from spectroscopic ellipsometry data using Cauchy model. Films with n- or p-type conduction were obtained depending on the composition, number of deposition and thermal treatment temperature. - Highlights: • Transparent conductive ZnO based thin films were prepared by the sol–gel method. • Controlled type of conduction is obtained in (Sn, Li) doped and Li-Ni co-doped ZnO films. • Hall and Seebeck measurements proved the p-type conductivity for Li-Ni co-doped ZnO films. • The p-type conductivity was maintained even after 4-months of storage. • Influence of dopant- and substrate-type on the ZnO films properties was established.

  16. Native defects in ZnO films studied by slow positron beam

    International Nuclear Information System (INIS)

    Peng Chengxiao; Weng Huimin; Ye Bangjiao; Zhou Xianyi; Han Rongdian; Yang Xiaojie

    2005-01-01

    Native defects in ZnO films grown by radio frequency (RF) reactive magnetron sputtering under variable oxygen fraction conditions have been investigated by using monoenergetic positrons beam technique. The results show that the same type defects dominate in these ZnO samples grown at oxygen fraction less than 70% in the process chamber; and zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with oxygen partial fraction rising. While oxygen fraction reaches 85%, zinc vacancies that could trap positrons decrease, which suggests that impurities could shield zinc vacancies. A combination between hydrogen atoms and the dangling bonds in the lattice could weaken the trap of positrons under the 50% oxygen fraction condition. The concentration of zinc vacancies varies in different oxygen fraction films, which is in agreement with the conclusion of photoluminescence spectroscopy. (authors)

  17. Third generation biosensing matrix based on Fe-implanted ZnO thin film

    International Nuclear Information System (INIS)

    Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

    2010-01-01

    Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM -1 cm -2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

  18. Slow positron beam study of hydrogen ion implanted ZnO thin films

    International Nuclear Information System (INIS)

    Hu, Yi; Xue, Xudong; Wu, Yichu

    2014-01-01

    The effects of hydrogen related defect on the microstructure and optical property of ZnO thin films were investigated by slow positron beam, in combination with x-ray diffraction, infrared and photoluminescence spectroscopy. The defects were introduced by 90 keV proton irradiation with doses of 1×10 15 and 1×10 16 ions cm −2 . Zn vacancy and OH bonding (V Zn +OH) defect complex were identified in hydrogen implanted ZnO film by positron annihilation and infrared spectroscopy. The formation of these complexes led to lattice disorder in hydrogen implanted ZnO film and suppressed the luminescence process. - Highlights: • Hydrogen introduced by ion implantation can form hydrogen-related defect complex. • V Zn +OH defect complex is identified by positron annihilation and IR spectroscopy. • Irradiation defects suppress the luminescence process

  19. Third generation biosensing matrix based on Fe-implanted ZnO thin film

    Science.gov (United States)

    Saha, Shibu; Gupta, Vinay; Sreenivas, K.; Tan, H. H.; Jagadish, C.

    2010-09-01

    Third generation biosensor based on Fe-implanted ZnO (Fe-ZnO) thin film has been demonstrated. Implantation of Fe in rf-sputtered ZnO thin film introduces redox center along with shallow donor level and thereby enhance its electron transfer property. Glucose oxidase (GOx), chosen as model enzyme, has been immobilized on the surface of the matrix. Cyclic voltammetry and photometric assay show that the prepared bioelectrode, GOx/Fe-ZnO/ITO/Glass is sensitive to the glucose concentration with enhanced response of 0.326 μA mM-1 cm-2 and low Km of 2.76 mM. The results show promising application of Fe-implanted ZnO thin film as an attractive matrix for third generation biosensing.

  20. Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    I. Saurdi

    2014-01-01

    Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

  1. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    International Nuclear Information System (INIS)

    Kim, Byunggu; Leem, Jae-Young

    2017-01-01

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  2. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2017-01-15

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  3. Effective tuning of electron charge and spin distribution in a dot-ring nanostructure at the ZnO interface

    Science.gov (United States)

    Chakraborty, Tapash; Manaselyan, Aram; Barseghyan, Manuk

    2018-05-01

    Electronic states and the Aharonov-Bohm effect in ZnO quantum dot-ring nanostructures containing few interacting electrons reveal several unique features. We have shown here that in contrast to the dot-rings made of conventional semiconductors, such as InAs or GaAs, the dot-rings in ZnO heterojunctions demonstrate several unique characteristics due to the unusual properties of quantum dots and rings in ZnO. In particular the energy spectra of the ZnO dot-ring and the Aharnov-Bohm oscillations are strongly dependant on the electron number in the dot or in the ring. Therefore even small changes of the confinement potential, sizes of the dot-ring or the magnetic field can drastically change the energy spectra and the behavior of Aharonov-Bohm oscillations in the system. Due to this interesting phenomena it is possible to effectively control with high accuracy the electron charge and spin distribution inside the dot-ring structure. This controlling can be achieved either by changing the magnetic field or the confinement potentials.

  4. Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Yizhou; Liu, Xiangmei [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China); Yeung, Kelvin W.K. [Division of Spine Surgery, Department of Orthopaedics & Traumatology, Li Ka Shing Faculty of Medicine, The University of Hong Kong, Pokfulam, Hong Kong (China); Chu, Paul K. [Department of Physics & Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Wu, Shuilin, E-mail: shuilin.wu@gmail.com [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062 (China)

    2017-04-01

    Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

  5. Biofunctionalization of carbon nanotubes/chitosan hybrids on Ti implants by atom layer deposited ZnO nanostructures

    International Nuclear Information System (INIS)

    Zhu, Yizhou; Liu, Xiangmei; Yeung, Kelvin W.K.; Chu, Paul K.; Wu, Shuilin

    2017-01-01

    Highlights: • Carbon naonotubes/chitosan/ZnO coating was first constructed on Ti implants. • This system endowed Ti implants with excellent self-antibacterial activity. • The amount of Zn could be precisely controlled by atom layer deposition. • This system could regulate cell behaviors on metallic implants. - Abstract: One-dimensional (1D) nanostructures of ZnO using atomic layer deposition (ALD) on chitosan (CS) modified carbon nanotubes (CNTs) were first introduced onto the surfaces of biomedical implants. When the content of ZnO is not sufficient, CNTs can strengthen the antibacterial activity against E. coli and S. aureus by 8% and 39%, respectively. CS can improve the cytocompatibility of CNTs and ZnO. The amount of Zn content can be controlled by changing the cycling numbers of ALD processes. This hybrid coating can not only endow medical implants with high self-antibacterial efficacy against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) of over 73% and 98%, respectively, but also regulate the proliferation and osteogenic differentiation of osteoblasts by controlling the amount of ZnO.

  6. Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Shi-Yi Zhuo

    2012-03-01

    Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

  7. Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.

    Science.gov (United States)

    Tierno, Davide; Dekkers, Matthijn; Wittendorp, Paul; Sun, Xiao; Bayer, Samuel C; King, Seth T; Van Elshocht, Sven; Heyns, Marc; Radu, Iuliana P; Adelmann, Christoph

    2018-05-01

    The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

  8. Precursor-controlled synthesis of hierarchical ZnO nanostructures, using oligoaniline-coated Au nanoparticle seeds

    Science.gov (United States)

    Krishnan, Deepti; Pradeep, T.

    2009-07-01

    Shape-selected synthesis of a large number of zinc oxide (ZnO) nano- and microstructures was achieved by the seed-mediated growth of oligoaniline-coated gold nanoparticle precursors. Distinctive ZnO structures such as nanoplates, nanospheres, microstars, microflowers, microthorns and micromultipods were synthesized by this method. Slightly different shapes were obtained in the absence of the seed solution. This is a fast, low temperature (60 °C) and biomimetic route to make a wide variety of structures. The structure and morphology of the nanostructures were studied by transmission electron microscopy (TEM) and scanning electron microscopy (SEM), respectively. Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) were utilized for the characterization of the nanostructures. A growth mechanism for these nanostructures was proposed based on these results. The concentrations of the reacting species were the main parameter causing the changes in the morphologies. The variation in morphologies of these structures is believed to be due to the ability of the seed solution as well as polyvinylpyrrolidone (PVP) to selectively suppress/depress the growth of certain planes, allowing growth to occur only in certain specific directions. Changes in the amount of growth nuclei with varying sodium hydroxide (NaOH) concentration is also seen to affect the morphology of these structures.

  9. Physical and electrochemical properties of ZnO films fabricated from highly cathodic electrodeposition potentials

    Science.gov (United States)

    Ismail, Abdul Hadi; Abdullah, Abdul Halim; Sulaiman, Yusran

    2017-03-01

    The physical and electrochemical properties of zinc oxide (ZnO) film electrode that were prepared electrochemically were studied. ZnO was electrodeposited on ITO glass substrate by applying three different highly cathodic potentials (-1.3 V, -1.5 V, -1.7 V) in a solution containing 70 mM of Zn(NO3)2.xH2O and 0.1 M KCl with bath temperatures of 70 °C and 80 °C. The presence of ZnO was asserted from XRD analysis where the corresponding peaks in the spectra were assigned. SEM images revealed the plate-like hexagonal morphology of ZnO which is in agreement with the XRD analysis. The areal capacitance of the ZnO was observed to increase when the applied electrodeposition potential is increased from -1.3 V to -1.5 V. However, the areal capacitance is found to decrease when the applied electrodeposition potential is further increased to -1.7 V. The resistance of charge transfer (Rct) of the ZnO decreased when the applied electrodeposition potential varies from -1.3 V to -1.7 V due to the decreased particle size of ZnO when more cathodic electrodeposition potential is applied.

  10. In and Ga Codoped ZnO Film as a Front Electrode for Thin Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Duy Phong Pham

    2014-01-01

    Full Text Available Doped ZnO thin films have attracted much attention in the research community as front-contact transparent conducting electrodes in thin film silicon solar cells. The prerequisite in both low resistivity and high transmittance in visible and near-infrared region for hydrogenated microcrystalline or amorphous/microcrystalline tandem thin film silicon solar cells has promoted further improvements of this material. In this work, we propose the combination of major Ga and minor In impurities codoped in ZnO film (IGZO to improve the film optoelectronic properties. A wide range of Ga and In contents in sputtering targets was explored to find optimum optical and electrical properties of deposited films. The results show that an appropriate combination of In and Ga atoms in ZnO material, followed by in-air thermal annealing process, can enhance the crystallization, conductivity, and transmittance of IGZO thin films, which can be well used as front-contact electrodes in thin film silicon solar cells.

  11. Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

    International Nuclear Information System (INIS)

    Zhong Minjian; Guo Guanglei; Yang Junyi; Ma Ninghua; Ye Guo; Ma Hongliang; Guo Xiaodong; Li Ruxin

    2008-01-01

    This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragg-like grating is formed by moving the sample at a speed of 10 μm/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal

  12. The optical properties of ZnO films grown on porous Si templates

    International Nuclear Information System (INIS)

    Liu, Y L; Liu, Y C; Yang, H; Wang, W B; Ma, J G; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    ZnO films were electrodeposited on porous silicon templates with different porosities. The photoluminescence (PL) spectra of the samples before and after deposition of ZnO were measured to study the effect of template porosity on the luminescence properties of ZnO/porous Si composites. As-prepared porous Si (PS) templates emit strong red light. The red PL peak of porous Si after deposition of ZnO shows an obvious blueshift, and the trend of blueshift increases with an increase in template porosity. A green emission at about 550 nm was also observed when the porosity of template increases, which is ascribed to the deep-level emission band of ZnO. A model-based band diagram of the ZnO/porous Si composite is suggested to interpret the properties of the composite

  13. Reversible superhydrophobic-superhydrophilic transition of ZnO nanorod/epoxy composite films.

    Science.gov (United States)

    Liu, Yan; Lin, Ziyin; Lin, Wei; Moon, Kyoung Sik; Wong, C P

    2012-08-01

    Tuning the surface wettability is of great interest for both scientific research and practical applications. We demonstrated reversible transition between superhydrophobicity and superhydrophilicity on a ZnO nanorod/epoxy composite film. The epoxy resin serves as an adhesion and stress relief layer. The ZnO nanorods were exposed after oxygen reactive ion etching of the epoxy matrix. A subsequent chemcial treatment with fluoroalkyl and alkyl silanes resulted in a superhydrophobic surface with a water contact angle up to 158.4° and a hysteresis as low as 1.3°. Under UV irradiation, the water contact angle decreased gradually, and the surface eventually became superhydrophilic because of UV induced decomposition of alkyl silanes and hydroxyl absorption on ZnO surfaces. A reversible transition of surface wettability was realized by alternation of UV illumination and surface treatment. Such ZnO nanocomposite surface also showed improved mechanical robustness.

  14. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

    International Nuclear Information System (INIS)

    Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

    2004-01-01

    The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

  15. Natural polysaccharides as active biomaterials in nanostructured films for sensing.

    Science.gov (United States)

    Eiras, Carla; Santos, Amanda C; Zampa, Maysa F; de Brito, Ana Cristina Facundo; Leopoldo Constantino, Carlos J; Zucolotto, Valtencir; dos Santos, José R

    2010-01-01

    The search for natural, biocompatible and degradable materials amenable to be used in biomedical/analytical applications has attracted attention, either from the environmental or medical point of view. Examples are the polysaccharides extracted from natural gums, which have found applications in the food and pharmaceutical industries as stabilizers or thickening agent. In a previous paper, however, it was shown that a Brazilian natural gum, chicha (Sterculia striata), is suitable for application as building block for nanostructured film fabrication in conjunction with phthalocyanines. The films displayed electroactivity and could be used in sensing. In the present paper, we introduce the use of two different natural gums, viz., angico (Anadenanthera colubrina) and caraia (Sterculia urens), as active biomaterials to be used to modification layers, in the form of nanostructured thin films, including the study of dopamine detection. The multilayer films were assembled in conjunction with nickel tetrasulfonated phthalocyanines (NiTsPC) and displayed good chemical and electrochemical stability, allowing their use as transducer elements in sensors for detection of specific neurotransmitters. It is suggested here that nanoscale manipulation of new biodegradable natural polymers opens up a variety of new opportunities for the use of these materials in advanced biomedical and analytical devices.

  16. Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

    Science.gov (United States)

    Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

    2015-05-01

    Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

  17. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  18. The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

    2012-01-01

    The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

  19. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    Energy Technology Data Exchange (ETDEWEB)

    Sima, M., E-mail: msima@infim.ro [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Mihut, L. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania); Vasile, E. [University “Politehnica”of Bucharest, Faculty of Applied Chemistry and Material Science, Department of Oxide Materials and Nanomaterials, No. 1-7 Gh. Polizu Street, 011061 Bucharest (Romania); Sima, Ma.; Logofatu, C. [National Institute of Materials Physics, 105bis Atomistilor Street, 077125 Magurele (Romania)

    2015-09-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn{sup 2+} ions into the Zn{sup 2+} site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn{sup 2+} ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A{sub 1} (LO) vibrational modes, from 482 and 567 cm{sup −1} to 532 and 580 cm{sup −1}, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm{sup −1} spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm{sup −1} confirms the insertion of Mn{sup 2+} ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn{sup 2+} ions into Zn{sup 2+} site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm{sup −1} at high Mn concentration • Compensation of the oxygen vacancy at higher

  20. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    International Nuclear Information System (INIS)

    Sima, M.; Mihut, L.; Vasile, E.; Sima, Ma.; Logofatu, C.

    2015-01-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn 2+ ions into the Zn 2+ site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn 2+ ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A 1 (LO) vibrational modes, from 482 and 567 cm −1 to 532 and 580 cm −1 , respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm −1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm −1 confirms the insertion of Mn 2+ ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn 2+ ions into Zn 2+ site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm −1 at high Mn concentration • Compensation of the oxygen vacancy at higher Mn concentration in ZnO lattice

  1. Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence

    Science.gov (United States)

    Bouzourâa, M.-B.; Battie, Y.; Dalmasso, S.; Zaïbi, M.-A.; Oueslati, M.; En Naciri, A.

    2018-05-01

    We report the temperature dependence of the dielectric function, the exciton binding energy and the electronic transitions of crystallized ZnO thin film using spectroscopic ellipsometry (SE) and photoluminescence (PL). ZnO layers were prepared by sol-gel method and deposited on crystalline silicon (Si) by spin coating technique. The ZnO optical properties were determined between 300 K and 620 K. Rigorous study of optical responses was achieved in order to demonstrate the quenching exciton of ZnO as a function of temperature. Numerical technique named constrained cubic splines approximation (CCS), Tauc-Lorentz (TL) and Tanguy dispersion models were selected for the ellipsometry data modeling in order to obtain the dielectric function of ZnO. The results reveals that the exciton bound becomes widely flattening at 470 K on the one hand, and on the other that the Tanguy dispersion law is more appropriate for determining the optical responses of ZnO thin film in the temperature range of 300 K-420 K. The Tauc-Lorentz, for its part, reproduces correctly the ZnO dielectric function in 470 K-620 K temperature range. The temperature dependence of the electronic transition given by SE and PL shows that the exciton quenching was observed in 420 K-∼520 K temperature range. This quenching effect can be explained by the equilibrium between the Coulomb force of exciton and its kinetic energy in the film. The kinetic energy was found to induce three degrees of freedom of the exciton.

  2. Optical and morphological properties of ZnO- and TiO2-derived nanostructures synthesized via a microwave-assisted hydrothermal method

    CSIR Research Space (South Africa)

    Moloto, N

    2012-01-01

    Full Text Available Corporation International Journal of Photoenergy Volume 2012, Article ID 189069, 6 pages doi:10.1155/2012/189069 Research Article Optical and Morphological Properties of ZnO- and TiO2-Derived Nanostructures Synthesized via a Microwave... International Journal of Photoenergy the sol-gel, hydrothermal process, and pulse laser deposition [22?24]. Although the sol-gel method is widely accepted for the preparation of both ZnO and TiO2 nanostructures, the calcinations process is essential and can...

  3. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D., E-mail: l_chandrakant@yahoo.com

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z{sub 1}) and nanograins by SILAR (Z{sub 2}). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10{sup 2} Ω cm) is lower than that of SILAR deposited films (10{sup 5} Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method.

  4. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    International Nuclear Information System (INIS)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D.

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z 1 ) and nanograins by SILAR (Z 2 ). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10 2 Ω cm) is lower than that of SILAR deposited films (10 5 Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method

  5. Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF Co-sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jonghyun; Choi, Wonjoon; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh [Hanyang University, Seoul (Korea, Republic of); Cheong, Hyeonsik [Sogang University, Seoul (Korea, Republic of)

    2006-09-15

    Outstanding n-type ZnO thin films were prepared on Si substrates by utilizing a double RF cosputtering method. Our unique double RF technique has many attractive merits for synthesizing ZnO thin films with excellent optoelectronic properties at various temperatures. The ZnO thin films were also post-annealed at various temperatures. The X-ray diffraction patterns and X-ray photoelectron spectroscopy indicated well-grown ZnO films with a (002) orientation and with gorgeous chemically bond states, respectively. In addition, photoluminescence measurements indicated a band-gap of 3.4 eV in the ZnO films. The scanning electron microscopy images showed that the as-grown ZnO thin film had hexagonal column shapes, such as hexagonal rods. The ZnO film exhibited an UV light response with a cut-off wavelength of {approx}370 nm at room temperature.

  6. Micro/Nanostructured Films and Adhesives for Biomedical Applications.

    Science.gov (United States)

    Lee, Jungkyu K; Kang, Sung Min; Yang, Sung Ho; Cho, Woo Kyung

    2015-12-01

    The advanced technologies available for micro/nanofabrication have opened new avenues for interdisciplinary approaches to solve the unmet medical needs of regenerative medicine and biomedical devices. This review highlights the recent developments in micro/nanostructured adhesives and films for biomedical applications, including waterproof seals for wounds or surgery sites, drug delivery, sensing human body signals, and optical imaging of human tissues. We describe in detail the fabrication processes required to prepare the adhesives and films, such as tape-based adhesives, nanofilms, and flexible and stretchable film-based electronic devices. We also discuss their biomedical functions, performance in vitro and in vivo, and the future research needed to improve the current systems.

  7. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    CERN Document Server

    Barbosa, M B; Redondo-Cubero, A; Miranda, S M C; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Méndez, B; Johnston, K; Alves, E; Vianden, R; Araújo, J P; Lorenz, K; Correia, J G

    2013-01-01

    The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\\,$min.) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe-defect complex. The ternary Cd$_x$Zn$_{1-x}$O (x=0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga$_2$O$_3$ samples, the substitution of the Cd probes in the octahedral Ga-site was observed, demonstrating the potential of ion-implantation for the doping of nanowires.

  8. Nitrogen binding behavior in ZnO films with time-resolved cathodoluminescence

    International Nuclear Information System (INIS)

    Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G.; Wong, K.W.; Chu, Paul K.; Wang, R.S.; Ong, H.C.

    2006-01-01

    ZnO film with (1 0 0) orientation was produced on silicon substrate and doped with nitrogen using plasma immersion ion implantation. The effects due to N doping were investigated using cathodoluminescence (CL). In the heavily nitrogen-doped ZnO film, the intensity of ultraviolet (UV) band decreases and that of the visible band increases as a function of the electron bombardment cycle i.e. time. Based on the X-ray photoelectron spectroscopy (XPS) analysis, the unstable Zn-N bond is responsible for the CL behavior and the experimental results agree well with the first-principle calculation. Our work is helpful to our understanding of the role of p-type dopants in ZnO

  9. Template-controlled piezoactivity of ZnO thin films grown via a bioinspired approach

    Directory of Open Access Journals (Sweden)

    Nina J. Blumenstein

    2017-01-01

    Full Text Available Biomaterials are used as model systems for the deposition of functional inorganic materials under mild reaction conditions where organic templates direct the deposition process. In this study, this principle was adapted for the formation of piezoelectric ZnO thin films. The influence of two different organic templates (namely, a carboxylate-terminated self-assembled monolayer and a sulfonate-terminated polyelectrolyte multilayer on the deposition and therefore on the piezoelectric performance was investigated. While the low negative charge of the COOH-SAM is not able to support oriented attachment of the particles, the strongly negatively charged sulfonated polyelectrolyte leads to texturing of the ZnO film. This texture enables a piezoelectric performance of the material which was measured by piezoresponse force microscopy. This study shows that it is possible to tune the piezoelectric properties of ZnO by applying templates with different functionalities.

  10. Optical characterization of Er-implanted ZnO films formed by sol-gel method

    International Nuclear Information System (INIS)

    Fukudome, T.; Kaminaka, A.; Isshiki, H.; Saito, R.; Yugo, S.; Kimura, T.

    2003-01-01

    In this paper, we report on the 1.54 μm photoluminescence (PL) of Er-implanted ZnO thin films formed by a sol-gel method on Si substrates. In spite of the polycrystalline structure of the sol-gel ZnO thin films, they showed strong PL emissions due to the near band edge recombination at 375 nm as well as the Er-related luminescence at 1.54 μm. The Er-related luminescence showed no decrease (quench) in the intensity up to the Er concentration of 1.5 x 10 21 cm -3 . The PL intensity of Er-implanted ZnO at 1.54 μm was found to be as strong as Er-doped PS (porous Si) at 20 K, and the intensity reduced to 1/3 at room temperature

  11. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

    Science.gov (United States)

    Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

    2017-12-01

    We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

  12. Study of nanocluster-assembled ZnO thin films by nanocluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhiwei; Lei, Wei; Zhang, Xiaobing [School of Electronic Science and Engieering, Southeast University, Nanjing (China); Tay, Beng Kang [School of Electronical and Electronic Engineering, Nanyang Technological University, Nanyang (Singapore)

    2012-01-15

    Nanocluster-assembled ZnO thin films were obtained by nanocluster-beam deposition, in which nanoclusters were produced by a magnetron sputtering gas aggregation source. Two kinds of ZnO thin films were obtained using this method with the one grown under the on-line heating temperature of 700 C, and the other grown without on-line heating. Film microstructure and optical properties are investigated by various diagnostic techniques. It was found that both of film microstructure of ZnO thin films keep wurtzite structure as that of ZnO bulk materials. The averaged particle size for the film grown without on-line heating is around 6 nm, which is a little lower than that grown with the on-line heating. It was also found that as increasing the wavelength, both of the absorbance spectra for the films decrease sharply near ultra-visible to extend slowly to the visible and infrared wavelength range. For the film grown without on-line heating, the bandgap energy was estimated to 3.77 eV, while for the film grown with on-line heating, the bandgap energy was redshift to 3.71 eV. Similar behavior was also found for PL spectra analysis, where PL spectrum exhibited a peak centered at 3.31 eV without on-line heating, while it redshift to 3.20 eV with on-line heating. The mechanisms behind these behaviors were presented in this article. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Morphological, structural and optical properties of ZnO thin solid films formed by nanoleafs or micron/submicron cauliflowers

    International Nuclear Information System (INIS)

    Angulo-Rocha, Jorge; Velarde-Escobar, Oscar; Yee-Rendón, Cristo; Atondo-Rubio, Gelacio; Millan-Almaraz, Roberto; Camarillo-García, Enrique

    2017-01-01

    Thin films of ZnO formed by nano and microstructures with hexagonal crystal phase were successfully synthesized by using pyrolysis technique. At first glance the films resulted divided in 7 zones that were morphologically analyzed and showed the presence of three types of particles: nano-leafs, single microparticles, and particles formed by the addition of microparticles, “clusters”. The largest and therefore the main zone was formed by nanoleafs. Studies on morphology, structure and optical properties of these nanoleafs were obtained and correlated too. The knowledge acquired from these studies allowed the synthesis of nanostructured films entirely formed by nanoleafs with a width of 25 nm and a length 200 nm long regardless of the roughness of the substrate. Energy gap of 3.26 eV was invariant to changes in synthesis parameters. The studies on optical properties of nanoleafs and micro-cauliflower give an energy diagram that account for the location of the energy states introduced by native crystalline defects into the energy band gap and their radiative electronic transitions.

  14. Morphological, structural and optical properties of ZnO thin solid films formed by nanoleafs or micron/submicron cauliflowers

    Energy Technology Data Exchange (ETDEWEB)

    Angulo-Rocha, Jorge [Laboratorio de Síntesis de Materiales-Facultad de Ciencias Físico-Matemáticas – Universidad Autónoma de Sinaloa, Ciudad Universitaria S/N, CP. 80000, Culiacán, Sinaloa, México (Mexico); Velarde-Escobar, Oscar; Yee-Rendón, Cristo; Atondo-Rubio, Gelacio [Laboratorio de Óptica-Facultad de Ciencias Físico-Matemáticas – Universidad Autónoma de Sinaloa, Ciudad Universitaria S/N, CP. 80000, Culiacán, Sinaloa, México (Mexico); Millan-Almaraz, Roberto [Facultad de Ciencias Físico-Matemáticas – Universidad Autónoma de Sinaloa, Ciudad Universitaria S/N, CP. 80000, Culiacán, Sinaloa, México (Mexico); Camarillo-García, Enrique [Instituto de Física, Universidad Nacional Autónoma de México, AP 20-364, Álvaro Obregón 01000, DF, México (Mexico); and others

    2017-05-15

    Thin films of ZnO formed by nano and microstructures with hexagonal crystal phase were successfully synthesized by using pyrolysis technique. At first glance the films resulted divided in 7 zones that were morphologically analyzed and showed the presence of three types of particles: nano-leafs, single microparticles, and particles formed by the addition of microparticles, “clusters”. The largest and therefore the main zone was formed by nanoleafs. Studies on morphology, structure and optical properties of these nanoleafs were obtained and correlated too. The knowledge acquired from these studies allowed the synthesis of nanostructured films entirely formed by nanoleafs with a width of 25 nm and a length 200 nm long regardless of the roughness of the substrate. Energy gap of 3.26 eV was invariant to changes in synthesis parameters. The studies on optical properties of nanoleafs and micro-cauliflower give an energy diagram that account for the location of the energy states introduced by native crystalline defects into the energy band gap and their radiative electronic transitions.

  15. Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2010-12-01

    Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

  16. Multiferroics and magnetoelectrics: thin films and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R [Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States); Department of Physics, University of California, Berkeley, CA 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)], E-mail: lwmartin@lbl.gov

    2008-10-29

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  17. Multiferroics and magnetoelectrics: thin films and nanostructures

    Science.gov (United States)

    Martin, L. W.; Crane, S. P.; Chu, Y.-H.; Holcomb, M. B.; Gajek, M.; Huijben, M.; Yang, C.-H.; Balke, N.; Ramesh, R.

    2008-10-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities—such as electrical control of ferromagnetism at room temperature—researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  18. Multiferroics and magnetoelectrics: thin films and nanostructures

    International Nuclear Information System (INIS)

    Martin, L W; Crane, S P; Chu, Y-H; Holcomb, M B; Gajek, M; Huijben, M; Yang, C-H; Balke, N; Ramesh, R

    2008-01-01

    Multiferroic materials, or materials that simultaneously possess two or more ferroic order parameters, have returned to the forefront of materials research. Driven by the desire to achieve new functionalities-such as electrical control of ferromagnetism at room temperature-researchers have undertaken a concerted effort to identify and understand the complexities of multiferroic materials. The ability to create high quality thin film multiferroics stands as one of the single most important landmarks in this flurry of research activity. In this review we discuss the basics of multiferroics including the important order parameters and magnetoelectric coupling in materials. We then discuss in detail the growth of single phase, horizontal multilayer, and vertical heterostructure multiferroics. The review ends with a look to the future and how multiferroics can be used to create new functionalities in materials.

  19. TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OF Co-DOPED ZnO FILMS BY VARYING OXYGEN PARTIAL PRESSURE

    OpenAIRE

    L. G. WANG; H. W. ZHANG; X. L. TANG; Y. X. LI; Z. Y. ZHONG

    2011-01-01

    High quality Co-doped ZnO films with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and magnetization measurements. The effect of oxygen partial pressure on the structural, magnetic, and electrical properties of Co-doped ZnO films has been systematically studied. It was found that the structural, ...

  20. Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Katiyar, R S [Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343 (Puerto Rico); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2007-10-07

    We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm{sup -1}. The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A{sub 1} (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries.

  1. Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Sreenivas, K; Katiyar, R S; Gupta, Vinay

    2007-01-01

    We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm -1 . The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A 1 (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries

  2. Characterization of CBD grown ZnO films with high c-axis orientation

    Energy Technology Data Exchange (ETDEWEB)

    Kahraman, S., E-mail: suleymanmku@gmail.com [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey); Bayansal, F.; Cetinkara, H.A.; Cakmak, H.M.; Gueder, H.S. [Physics Department, Mustafa Kemal University, 31034 Hatay (Turkey)

    2012-06-15

    Highly c-axis oriented ZnO films were deposited on seeded glass substrates. Successive ionic layer adsorption and reaction (SILAR) method and chemical bath deposition (CBD) method were used to obtain seed layers and ZnO films. To see the effects of seed layer and deposition time, structural (e.g. grain size, microstrain and dislocation density), morphological, and electrical (e.g. resistivity, activation energy) properties of the films were investigated by scanning electron microscopy, X-ray diffraction, and four point probe method. From the SEM images, resultant structures were found as well defined nanorods nearly perpendicular to the substrate surfaces and densely cover the substrates. The XRD patterns showed that ZnO films have hexagonal wurtzite structure with a preferred c-axis orientation along (002) plane. C-axis orientation was also supported by texture coefficient calculations. The lattice parameters of the structures were determined as a = 3.2268 A, b = 5.2745 A, {alpha} = {beta} = 90 Degree-Sign and {gamma} = 120 Degree-Sign . From the XRD patterns, it was revealed that, microstrain and dislocation density values of the structures decreased whereas grain size increased. This was attributed to enhancement occurred in lattice structure of the ZnO films. Activation energy values of the films were found in between 0.12 and 0.15 eV from the dark electrical resistivity-temperature characteristics in a temperature range of 300-500 K. - Highlights: Black-Right-Pointing-Pointer Hexagonal wurtzite structured ZnO nanorods (preferred orientation along (002) plane). Black-Right-Pointing-Pointer Electrical activation energies were calculated in between 0.12 and 0.15 eV. Black-Right-Pointing-Pointer Microstrain and dislocation density decreased with increasing deposition time. Black-Right-Pointing-Pointer Increasing deposition time was resulted in an increase in preferred orientation.

  3. Eosin-Y sensitized core-shell TiO2-ZnO nano-structured photoanodes for dye-sensitized solar cell applications.

    Science.gov (United States)

    Manikandan, V S; Palai, Akshaya K; Mohanty, Smita; Nayak, Sanjay K

    2018-06-01

    In the current investigation, TiO 2 and TiO 2 -ZnO (core-shell) spherical nanoparticles were synthesized by simple combined hydrolysis and refluxing method. A TiO 2 core nanomaterial on the shell material of ZnO was synthesized by utilizing variable ratios of ZnO. The structural characterization of TiO 2 -ZnO core/shell nanoparticles were done by XRD analysis. The spherical structured morphology of the TiO 2 -ZnO has been confirmed through field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) studies. The UV-visible spectra of TiO 2 -ZnO nanostructures were also compared with the pristine TiO 2 to investigate the shift of wavelength. The TiO 2 -ZnO core/shell nanoparticles at the interface efficiently collect the photogenarated electrons from ZnO and also ZnO act a barrier for reduced charge recombination of electrolyte and dye-nanoparticles interface. This combination improved the light absorption which induced the charge transfer ability and dye loading capacity of core-shell nanoparticles. An enhancement in the short circuit current (J sc ) from 1.67 mA/cm 2 to 2.1 mA/cm 2 has been observed for TiO 2 -ZnObased photoanode (with platinum free counter electrode), promises an improvement in the energy conversion efficiency by 57% in comparison with that of the DSSCs based on the pristine TiO 2 . Henceforth, TiO 2 -ZnO photoelectrode in ZnO will effectively act as barrier at the interface of TiO 2 -ZnO and TiO 2 , ensuring the potential for DSSC application. Copyright © 2018 Elsevier B.V. All rights reserved.

  4. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.; Mahesh, H. M., E-mail: hm-mahesh@rediffmail.com [Thin Film and Solar Cell Laboratory, Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore -560056 (India)

    2016-05-06

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  5. Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Kajal Jindal

    2015-02-01

    Full Text Available Transition from room temperature diamagnetic to ferromagnetic state in N doped ZnO (ZnO:N films grown by pulsed laser deposition with tunable energy density has been identified. ZnO:N films deposited with moderate laser energy density of 2.5 J/cm2 are single phase and nearly defect free having N dopant substitution at O sites in ZnO lattice, exhibiting intrinsic ferromagnetism. When energy density reduces (<2.5 J/cm2, defects in ZnO:N film degrades ferromagnetism and exhibit diamagnetic phase when grown at energy density of 1.0 J/cm2. Growth kinetics, which in turn depends on laser energy density is playing important role in making transition from ferromagnetic to diamagnetic in ZnO:N films.

  6. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    International Nuclear Information System (INIS)

    Kunj, Saurabh; Sreenivas, K.

    2016-01-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O_2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  7. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Science.gov (United States)

    Kunj, Saurabh; Sreenivas, K.

    2016-05-01

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O2) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  8. Near band edge emission characteristics of sputtered nano-crystalline ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kunj, Saurabh; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)

    2016-05-06

    Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.

  9. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  10. Annealing impact on the structural and photoluminescence properties of ZnO thin films on Ag substrates

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Lai, Min; Pei, Shixin

    2014-01-01

    Graphical abstract: The Gaussian fitting indicates that the PL spectra of the ZnO thin films include four emission peaks which are centered at 380, 520, 570 and 610 nm, respectively. The ZnO thin film deposited on an Ag substrate shows a stronger green emission and a weaker UV emission than the ZnO thin film directly deposited on a Si substrate annealed at 400 °C. With the rise of annealing temperature, the visible emission intensity and wavelength are largely changed. Highlights: • ZnO thin films have been prepared on Ag substrates by sol–gel method. • The Ag substrates have a great effect on the photoluminescence of ZnO thin films. • All the films exhibit three visible emission bands including green, yellow and red. • Annealing causes a large change of the visible emission intensity and wavelength. -- Abstract: In this work, ZnO thin films were prepared by sol–gel method on Ag substrates. The structural and optical properties of the films annealed at different temperatures were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence, respectively. The results of XRD showed that all the ZnO thin films had a wurtzite phase and were preferentially oriented along the c-axis direction. The sample annealed at 400 °C exhibited better crystalline quality than the ZnO thin film directly deposited on a Si substrate annealed at the same temperature. The photoluminescence spectra showed that ZnO thin films had an ultraviolet emission band and three visible emission bands including green, yellow and red band. The sample annealed at 400 °C exhibited a stronger green emission and a weaker ultraviolet emission compared with the ZnO thin film deposited on a Si substrate annealed at the same temperature. The difference of the luminescence properties was thought to be originated from different substrates. As for the ZnO films on Ag substrates, the increase of annealing temperature led to different changes of visible emissions

  11. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    Administrator

    of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical pro- perties has ... dependence of photoresponse properties of sprayed ZnO thin films on ... randomly oriented flake-like grains. The grains ...

  12. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  13. Study on Crystallographic Properties of Li Doped ZnO Thin Films

    International Nuclear Information System (INIS)

    Khine Khine Linn; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2008-03-01

    Li-doped ZnO film is prepared on highly polished Si substrate. The process temperature are range from 400 0 C to 600 0 C and maintained 1 hr for homogenization. According to the experimental results, it is significant that the growth chemistry is quite feasible and expected to be crystalline at above-mentioned temperatures.

  14. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Roč. 580, suppl. 1 (2013), S40-S43 ISSN 0925-8388 R&D Projects: GA ČR(CZ) GAP108/11/0958 Institutional support: RVO:68378271 Keywords : defects * hydrogen * positron annihilation * thin films * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.726, year: 2013

  15. Research on the properties of ZnO films by 1/f noise measurement

    NARCIS (Netherlands)

    Leroy, G.; Gest, J.; Yang, L.; Vandamme, L.K.J.

    2013-01-01

    ZnO films were deposited by de sputtering technique on glass and Pt/Si substrates. The effect of growth parameters is investigated on sheet resistance and noise. The 1/f noise normalized for bias, frequency and unit area, Cus is proportional with the sheet resistance Rsh. We found that the noise

  16. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

    International Nuclear Information System (INIS)

    Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2014-01-01

    In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

  17. Preparation of cadmium-doped ZnO thin films by SILAR and their ...

    Indian Academy of Sciences (India)

    Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath .... of complex ion on the substrate followed by reaction of the .... Intensity (a.u.). 0. 500 .... trum confirmed the presence of Zn, O and Cd elements in the.

  18. Thermal Conductivity in Nanostructured Films: From Single Cellulose Nanocrystals to Bulk Films

    Science.gov (United States)

    Jairo A. Diaz; Zhijiang Ye; Xiawa Wu; Arden L. Moore; Robert J. Moon; Ashlie Martini; Dylan J. Boday; Jeffrey P. Youngblood

    2014-01-01

    We achieved a multiscale description of the thermal conductivity of cellulose nanocrystals (CNCs) from single CNCs (~­0.72−5.7 W m−1 K−1) to their organized nanostructured films (~­0.22−0.53 W m−1 K−1) using...

  19. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  20. Tin dioxide nanostructured thin films obtained through polymeric precursor method

    Directory of Open Access Journals (Sweden)

    Marcelo Antônio Dal Santos

    2012-11-01

    Full Text Available Tin dioxide (SnO2 nanostructured thin films with low proportion of defects and low roughness were produced through the systematic control of temperature and viscosity of the precursor solutions used for thin films deposition. These solutions were obtained through the citrate method and the films were deposited through the ‘dip-coating’ technique on glass substrate and after thermal treatment at 470ºC/4h, they were characterized both structurally and morphologically through the X-ray diffractometry, optic microscopy, scanning electronic microscopy, atomic force microscopy, X-ray fluorescence, UV-Vis absorption spectroscopy and X-ray excited photoelectrons spectroscopy. The film thickness was obtained through scanning electronic microscopy of the films cross-section and correlated to the proportion of Sn and Si obtained through X-ray fluorescence. X-ray diffractometry of the films revealed the presence of peaks corresponding to the SnO2 crystalline phase, overlapping a wide peak between 20 and 30º (2?, characteristic of the glass substrate. Optic microscopy, Scanning electronic microscopy and atomic force microscopy revealed homogeneous films, with low roughness, suitable to several applications such as sensors and transparent electrodes. It could be observed through the UV-Vis absorption analysis that the films presented high optical transparency and ‘band gap’ energy 4.36 eV. The X-ray excited photoelectron spectroscopy confirmed the presence of SnO2, as well as traces of the elements present in the glass substrate and residual carbon from the thermal treatment of the films.

  1. Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

    International Nuclear Information System (INIS)

    Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

    2010-01-01

    Full text : Semiconductor ZnO thin films with wide band gap attract much interest due to their properties such as chemical stability in hydrogen plasma, high optical transparency in the visible and nearinfrared region. Due to these properties ZnO oxide is a promising materials for electronic or optoelectronic applications such as solar cell (as an antireflecting coating and a transparent conducting material), gas sensors, surface acoustic wave devices. The purpose of this research is to improve the properties of n and p-type ZnO thin films for device applications. Polycrystalline ZnO is naturally n-type and very difficult to dope to make p-type. Therefore nowadays hardly produced p-type ZnO attracts a lot of attention. Nitrogen considered as the best dopant for p-type ZnO thin films.The transparent, conductive and very precise thickness controlled n and p-type semiconducting nanocrystalline ZnO thin films were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. Structural, optical and electrical properties of these films were investigated. And also photoluminescence properties of these films were investigated. Transparent p-type ZnO thin films were produced by oxidation of PFCVAD deposited zinc nitride. Zinc nitride thin films were deposited with various thicknesses and under different oxygen pressures on glass substrates. Zinc nitride thin films, which were deposited at room temperatures, were amorphous and the optical transmission was below 70%. For oxidation zinc nitride, the sample was annealed in air starting from 350 degrees Celsium up to 550 degrees Celsium for one hour duration. These XRD patterns imply that zinc nitride thin films converted to zinc oxide thin films with the same hexagonal crystalline structures of ZnO. The optical measurements were made for each annealing temperature and the optical transmissions of ZnO thin films were found better than 90 percent in visible range after annealing over 350 degrees Celsium. By

  2. Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

    International Nuclear Information System (INIS)

    Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

    2012-01-01

    Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

  3. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  4. Formation mechanisms of metallic Zn nanodots by using ZnO thin films deposited on n-Si substrates

    International Nuclear Information System (INIS)

    Yuk, J. M.; Lee, J. Y.; Kim, Y.; No, Y. S.; Kim, T. W.; Choi, W. K.

    2010-01-01

    High-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy results showed that metallic Zn nanodots (NDs) were fabricated through transformation of ZnO thin films by deposition of SiO x on ZnO/n-Si (100) heterostructures. The Zn NDs with various sizes and densities were formed due to the occurrence of the mass diffusion of atoms along the grain boundaries in the ZnO thin films. The fabrication mechanisms of metallic Zn NDs through transformation of ZnO thin films deposited on n-Si substrates are described on the basis of the experimental results.

  5. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Gupta, Vinay

    2012-01-01

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  6. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

    2012-05-15

    Photoresponse characteristics of ZnO thin films deposited by three different techniques