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Sample records for zno als verduennter

  1. Cobalt-doped ZnO as dilute magnetic semiconductor; Cobalt dotiertes ZnO als verduennter magnetischer Halbleiter

    Energy Technology Data Exchange (ETDEWEB)

    Gacic, Milan

    2009-04-24

    Dilute magnetic semiconductors (DMS) are technologically promising materials that show ferromagnetic as well as semiconducting properties. These are one of the crucial compounds concerning the development of spintronic devices. The main problem so far ist that for applications the Curie temperature of most of the DMS compounds is much too low. However, DMS compounds based on ZnO as Zn{sub 1-x}Co{sub x}O seem to show ferromagnetism above room temperature, but the ferromagnetic exchange is not fully understood. Intensive experimental investigations need to be done. In the course of this theses Zn{sub 0.95}Co{sub 0.05}O thin films were fabricated by pulsed laser deposition and investigated concerning their magnetic, magnetoelectric and structural properties in order to understand the ferromagnetism in this material. Different experimental methods have been used, as magnetometry, X-ray diffraction (XRD), X-ray magnetic circular dichroism (XMCD), electron spin resonance (ESR) and magnetoelectric transport measurements. At special preparation conditions, where a high defect density is induced, the samples are clearly ferromagnetic above room temperature with a saturation magnetization of 2 {mu}{sub b}/Co and a remanence of 90%. Electrical transport measurements show a clear magnetoresistance as well as a anomalous Hall effect. The anomalous Hall effect rises with the magnetization indicating intrinsic ferromagnetism and a certain degree of spin polarization. As the ferromagnetism disappears with rising charge carrier density the ferromagnetic interaction cannot be mediated by the conduction electrons. A more precise evaluation of the magnetoelectric results shows that there is an additional conducting impurity band which could even be spinpolarized. So there are indications that the ferromagnetism is due to magnetic polarons. Some of the structural and magnetometric results as well as the electron spin resonance measurements suggest an additional extrinsic contribution

  2. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

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    Mohan, R. Raj [Department of ECE, Gojan School of Business and Technology, Chennai (India); Rajendran, K. [Department of Electronics, Government Arts College for Women, Ramanathapuram, TN (India); Sambath, K. [Department of ECS, Sri Krishna Arts and Science College, Coimbatore, TN (India)

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  3. Al-doped ZnO nanofilms: Synthesis and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Huczko, A.; Dabrowska, A. [Department of Chemistry, Warsaw University, Warsaw (Poland); Madhup, D.K. [Department of Physics, Kathmandu University, Dhulikhel (Nepal); College of Biomedical Engineering and Applied Sciences, Hadigaun, Kathmandu (Nepal); Subedi, D.P.; Chimouriya, S.P. [Department of Physics, Kathmandu University, Dhulikhel (Nepal)

    2010-12-15

    Al-doped and un-doped ZnO nanofilms on quartz substrate were obtained by ultrasonic spray pyrolysis of salt solutions (mole concentration of Al within 0-10%). The films were characterized by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Atomic force microscopy (AFM) and UV spectroscopy to study the morphology and optical properties. The optical studies showed that the increase in Al within ZnO thin layer increases its band gap energy. The obtained value of band gap energy is very close to the determined oscillation energy. However, the dispersion energy is nearly half of band gap energy value. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

    Science.gov (United States)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2017-05-01

    ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

  5. Ultraviolet Sensing by Al-doped ZnO Thin Films

    International Nuclear Information System (INIS)

    Rashid, A.R.A.; Menon, P.S.; Shaari, S.

    2011-01-01

    We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500 degree Celsius for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an improvement in electrical properties when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time. (author)

  6. Atomic layer deposition of Al-doped ZnO thin films

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    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

    2013-01-15

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

  7. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Son, Hyo-Soo; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, Goesan-gun, Chungbuk 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)

    2016-10-15

    Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

  8. Influence Al doped ZnO nanostructure on structural and optical properties

    International Nuclear Information System (INIS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-01-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  9. Al-Doped ZnO Monolayer as a Promising Transparent Electrode Material: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Mingyang Wu

    2017-03-01

    Full Text Available Al-doped ZnO has attracted much attention as a transparent electrode. The graphene-like ZnO monolayer as a two-dimensional nanostructure material shows exceptional properties compared to bulk ZnO. Here, through first-principle calculations, we found that the transparency in the visible light region of Al-doped ZnO monolayer is significantly enhanced compared to the bulk counterpart. In particular, the 12.5 at% Al-doped ZnO monolayer exhibits the highest visible transmittance of above 99%. Further, the electrical conductivity of the ZnO monolayer is enhanced as a result of Al doping, which also occurred in the bulk system. Our results suggest that Al-doped ZnO monolayer is a promising transparent conducting electrode for nanoscale optoelectronic device applications.

  10. Superhydrophobic ZnAl double hydroxide nanostructures and ZnO films on Al and glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    De, Debasis, E-mail: debasis.de@bcrec.ac.in [Electronics and Instrumentation Engineering Department, Dr. B C Roy Engineering College, Durgapur, West Bengal 713206 (India); Sarkar, D.K. [Centre Universitaire de Recherche sur l' Aluminium (CURAL), L' Université du Québec à Chicoutimi, 555 Blvd. Université, Chicoutimi, Saguenay, Québec G7H 2B1 (Canada)

    2017-01-01

    Superhydrophobic nanostructured ZnAl: layered double hydroxides (LDHs) and ZnO films have been fabricated on Al and glass substrates, respectively, by a simple and cost effective chemical bath deposition technique. Randomly oriented hexagonal patterned of ZnAl: LDHs thin nanoplates are clearly observed on Al-substrate in the scanning electron microscopic images. The average size of these hexagonal plates is ∼4 μm side and ∼30 nm of thickness. While on the glass substrate, a oriented hexagonal patterned ZnO nanorods (height ∼5 μm and 1 μm diameter) are observed and each rod is further decorated throughout the top few nanometers with several nanosteps. At the top of the nanorod, a perfectly hexagonal patterned ZnO surface with ∼250 nm sides is observed. The tendency to form hexagonal morphological features is due to the hexagonal crystal structure of ZnO confirmed from X-ray diffraction patterns and transmission electron microscopy image. The ZnAl: LDHs and/or ZnO coated substrates have been passivated by using stearic acid (SA) molecules. Infrared spectra of passivated ZnAl: LDHs coated substrates confirm the presence of SA. X-ray diffraction pattern also corroborates the results of infrared spectrum. The contact angle of the as prepared samples is zero. The superhydrophobicity is achieved by observing contact angle of ∼161° with a hysteresis of ∼4° for Al-substrate. On the glass substrate, a higher contact angle of ∼168° with a lower hysteresis of ∼3° is observed. A lower surface roughness of ∼4.93 μm is measured on ZnAl: LDHs surface layer on the Al substrate as compare to a higher surface roughness of 6.87 μm measured on ZnO layer on glass substrate. The superhydrophobicity of passivated nanostructured films on two different substrates is observed due to high surface roughness and low surface energy. - Highlights: • ZnAl: layered double hydroxides (LDHs) nanoplates are fabricated on Al substrate. • ZnO nanorods are fabricated on

  11. Thermoelectric ZnO and ZnAl2O4

    DEFF Research Database (Denmark)

    Sommer, Sanna

    2015-01-01

    ZnO har vist sig at være et lovende termoelektrisk materiale. Den høje termiske ledningsevne kræver at man forsker i at finde en måde at sænke den. Tilstedeværelsen af både ZnAl2O4 og ZnO har vist sig at sænke den termiske ledningsevne for ZnO. Berardan et al. [5] har vist at når ZnAl2O4...... is tilstede på baggrund af en for høj aluminium doping koncentration under syntese af ZnO, så medfører tilstedeværelsen af ZnAl2O4 at zT sænkes. Modsat, så har Jood et al. vist at tildstedeværelsen af ZnAl2O4 kan medføre en aftagende termisk ledningsevne. På trods af en samtidig sænkning af den elektriske...... ledningsevne giver det overordnet en øget zT. Baillieul [29] har [20] syntetiseret ZnAl2O4 og ZnO separat, hvorefter krystalliterne er presset sammen. Det viser sig at medføre en øget elektrisk ledningsevne kombineret med aftagende termiske ledningsevne. Disse resultater viser at tilstedeværelsen af ZnAl2O4...

  12. Al-doped ZnO mechanical milled powders for dye sensitized cells

    International Nuclear Information System (INIS)

    Damonte, L.C.; Donderis, V.; Ferrari, S.; Orozco, J.; Hernandez-Fenollosa, M.A.

    2010-01-01

    Mixtures of Al 2 O 3 and ZnO powders were prepared by mechanical milling. The resulting samples were analyzed and characterized by X-ray diffraction (XRD), positron annihilation lifetime spectroscopy (PALS), scanning electron microscopy (SEM) and optical reflection spectroscopy (OPS). XRD and PALS measurements confirm Al incorporation into ZnO wurtzite structure. Powders obtained from Al 2 O 3 precursors display better reflectivity than those prepared from Al metal so they might be better materials for implementation in photovoltaic solar devices.

  13. Al-doped ZnO mechanical milled powders for dye sensitized cells

    Energy Technology Data Exchange (ETDEWEB)

    Damonte, L.C., E-mail: damonte@fisica.unlp.edu.a [Departamento de Fisica, UNLP, IFLP-CCT-CONICET, C.C.67(1900), La Plata (Argentina); Dto. de Fisica Aplicada, Universidad Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain); Donderis, V. [Dto. de Ingenieria Electrica, Universidad Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain); Ferrari, S. [Departamento de Fisica, UNLP, IFLP-CCT-CONICET, C.C.67(1900), La Plata (Argentina); Orozco, J. [ITM, Universidad Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain); Hernandez-Fenollosa, M.A. [Dto. de Fisica Aplicada, Universidad Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain)

    2010-04-16

    Mixtures of Al{sub 2}O{sub 3} and ZnO powders were prepared by mechanical milling. The resulting samples were analyzed and characterized by X-ray diffraction (XRD), positron annihilation lifetime spectroscopy (PALS), scanning electron microscopy (SEM) and optical reflection spectroscopy (OPS). XRD and PALS measurements confirm Al incorporation into ZnO wurtzite structure. Powders obtained from Al{sub 2}O{sub 3} precursors display better reflectivity than those prepared from Al metal so they might be better materials for implementation in photovoltaic solar devices.

  14. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  15. Stability and band offsets between c-plane ZnO semiconductor and LaAlO3 gate dielectric

    Science.gov (United States)

    Wang, Jianli; Chen, Xinfeng; Wu, Shuyin; Tang, Gang; Zhang, Junting; Stampfl, C.

    2018-03-01

    Wurtzite-perovskite heterostructures composed of a high dielectric constant oxide and a wide bandgap semiconductor envision promising applications in field-effect transistors. In the present paper, the structural and electronic properties of LaAlO3/ZnO heterojunctions are investigated by first-principles calculations. We study the initial adsorption of La, Al, and oxygen atoms on ZnO (0001) and (000 1 ¯ ) surfaces and find that La atoms may occupy interstitial sites during the growth of stoichiometric ZnO (0001). The band gap of the stoichiometric ZnO (0001) surface is smaller than that of the stoichiometric ZnO (000 1 ¯ ) surface. The surface formation energy indicates that La or Al atoms may substitute Zn atoms at the nonstoichiometric ZnO (0001) surface. The atomic charges, electronic density of states, and band offsets are analyzed for the optimized LaAlO3/ZnO heterojunctions. There is a band gap for the LaAlO3/ZnO (000 1 ¯ ) heterostructures, and the largest variation in charge occurs at the surface or interface. Our results suggest that the Al-terminated LaAlO3/ZnO (000 1 ¯ ) interfaces are suitable for the design of metal oxide semiconductor devices because the valence and conduction band offsets are both larger than 1 eV and the interface does not produce any in-gap states.

  16. The crystallization and physical properties of Al-doped ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Chen, K.J. [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fang, T.H. [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Hung, F.Y. [Institute of Nanotechnology and Microsystems Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)], E-mail: fyhung@mail.mse.ncku.edu.tw; Ji, L.W. [Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China); Chang, S.J.; Young, S.J. [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hsiao, Y.J. [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2008-07-15

    Un-doped Al (0-9 at.%) nanoparticles and doped ZnO powders were prepared by the sol-gel method. The nanoparticles were heated at 700-800 deg. C for 1 h in air and then analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). The results of un-doped (ZnO) and Al-doped ZnO (AZO) nanoparticles were also compared to investigate the structural characteristics and physical properties. XRD patterns of AZO powders were similar to those of ZnO powders, indicating that micro-Al ions were substituted for Zn atoms and there were no variations in the structure of the ZnO nanoparticles. From the XRD and SEM data, the grain size of the AZO nanoparticles increased from 34.41 to 40.14 nm when the annealing temperature was increased. The Raman intensity of the AZO nanoparticles (Al = 5 at.%) increased when the annealing temperature was increased. Increasing the degree of crystalline not only reduced the residual stress, but also improved the physical properties of the nanoparticles.

  17. The crystallization and physical properties of Al-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Chen, K.J.; Fang, T.H.; Hung, F.Y.; Ji, L.W.; Chang, S.J.; Young, S.J.; Hsiao, Y.J.

    2008-01-01

    Un-doped Al (0-9 at.%) nanoparticles and doped ZnO powders were prepared by the sol-gel method. The nanoparticles were heated at 700-800 deg. C for 1 h in air and then analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). The results of un-doped (ZnO) and Al-doped ZnO (AZO) nanoparticles were also compared to investigate the structural characteristics and physical properties. XRD patterns of AZO powders were similar to those of ZnO powders, indicating that micro-Al ions were substituted for Zn atoms and there were no variations in the structure of the ZnO nanoparticles. From the XRD and SEM data, the grain size of the AZO nanoparticles increased from 34.41 to 40.14 nm when the annealing temperature was increased. The Raman intensity of the AZO nanoparticles (Al = 5 at.%) increased when the annealing temperature was increased. Increasing the degree of crystalline not only reduced the residual stress, but also improved the physical properties of the nanoparticles

  18. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

    Science.gov (United States)

    Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

    2017-12-01

    We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

  19. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  20. Photocatalytic Performance of ZnO: Al Films under Different Light Sources

    Directory of Open Access Journals (Sweden)

    Prashant Pradhan

    2012-01-01

    Full Text Available ZnO and Al doped ZnO films were produced by spray pyrolysis. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, UV-vis spectroscopy, and photoluminescence. Their photocatalytic activity was evaluated by the decomposition of the methyl orange dye using different light sources: ultraviolet light, artificial white light, and direct sunlight. The films were also tested under darkness for comparison. The ZnO films were able to degrade the test pollutant under UV and sunlight in more than a 60% after 180 min of irradiation and a scarce degradation was obtained using white light. However, the Al doped ZnO films presented a very high degradation rate not only under UV and sunlight (100% degradation, but also under white light (90% degradation after the same irradiation time. An unexpected high degradation was also obtained in the dark, which indicates that a nonphotonic process is taking place parallel to the photocatalytic process. This can be due to the extra electrons—provided by the aluminum atoms—that migrate to the surface and produce radicals favoring the decomposition process even in the dark. The high activity achieved by the ZnO: Al films under natural conditions can be potentially applied to water treatment processes.

  1. Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

    Science.gov (United States)

    Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2011-06-01

    The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 × 1020cm-3) into ZnO is performed using a multiple-step energy. The resistivity decreases from ˜104 Ω cm for un-implanted ZnO to 1.4 × 10-1 Ω cm for as-implanted, and reaches 6.0 × 10-4 Ω cm for samples annealed at 1000 °C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zni) and O (Oi), respectively. After annealing at 1000 °C, the Zni related defects remain and the Oi related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zni (˜30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 °C is assigned to both of the Zni related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 °C, suggesting electrically activated Al donors.

  2. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    Administrator

    Experiment and prediction on thermal conductivity of Al2O3/ZnO nano thin film interface structure. PING YANG*, LIQIANG ZHANG, HAIYING YANG†, DONGJING LIU and XIALONG LI. Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS,. School of Mechanical Engineering, Jiangsu University, ...

  3. Characteristics of hydrogen co-doped ZnO : Al thin films

    International Nuclear Information System (INIS)

    Lee, S H; Lee, T S; Lee, K S; Cheong, B; Kim, W M; Kim, Y D

    2008-01-01

    ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al 2 O 3 on Corning glass at a substrate temperature of 150 deg. C with Ar and H 2 /Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H 2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H 2 . The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H 2 content in sputter gas. Annealing at 300 deg. C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications

  4. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  5. Determination of chemical state of Al doping element in ZnO layer

    International Nuclear Information System (INIS)

    Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

    2011-01-01

    Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

  6. Theoretical study of ZnO adsorption and bonding on Al2O3 (0001) surface

    Institute of Scientific and Technical Information of China (English)

    LI Yanrong; YANG Chun; XUE Weidong; LI Jinshan; LIU Yonghua

    2004-01-01

    ZnO adsorption on sapphire (0001) surface is theoretically calculated by using a plane wave ultrasoft pseudo-potential method based on ab initio molecular dynamics. The results reveal that the surface relaxation in the first layer Al-O is reduced, even eliminated after the surface adsorption of ZnO, and the chemical bonding energy is 434.3(±38.6) kJ·mol-1. The chemical bond of ZnO (0.185 ± 0.01 nm) has a 30° angle away from the adjacent Al-O bond, and the stable chemical adsorption position of the Zn is deflected from the surface O-hexagonal symmetry with an angle of about 30°. The analysis of the atomic populations, density of state and bonding electronic density before and after the adsorption indicates that the chemical bond formed by the O2- of the ZnO and the surface Al3+ has a strong ionic bonding characteristic, while the chemical bond formed by the Zn2+ and the surface O2- has an obvious covalent characteristic, which comes mainly from the hybridization of the Zn 4s and the O 2p and partially from that of the Zn 3d and the O 2p.

  7. On the role of Al in ultrasonically sprayed ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kurtaran, S., E-mail: skurtaran@ogu.edu.tr; Aldag, S.; Ofofoglu, G.; Akyuz, I.; Atay, F.

    2017-01-01

    In this work, Al incorporated ZnO films have been deposited by Ultrasonic Spray Pyrolysis technique. Behavior of Al element in the structure has been tried to be clarified by investigating the structural, optical, surface and electrical properties. Compositional analysis has been performed by EDX and Al contents in the coatings have been determined as 1.1, 2.8 and 3.1 at %. X-ray diffraction patterns have shown that all films are polycrystalline with hexagonal wurtzite structure and the dominant peak is (002) ZnO for films except the one containing the highest amount of Al. Above the Al content of 2.8 at %, appearance of new phases such as Al{sub 2}O{sub 3} and ZnAl{sub 2}O{sub 4} in XRD patterns refers a solubility limit at this doping rate. Thicknesses and optical constants (refractive index and extinction coefficient) have been determined by spectroscopic ellipsometry technique using Cauchy-Urbach model. Al doping above the solubility limit has caused ZnO films to have lower refractive index values. Also, AFM images have shown that surface morphologies of the films lose their spherical and granular texture and transform to a randomly clustered formation with sharper upper edges above the solubility limit. Transmittance and electrical resistivity measurements have shown that Al incorporation below solubility limit (1.1 and 2.8 at %) allows maintaining the transparency together with low resistivity values. These films have value to work on and may be promising materials for optoelectronic applications. - Highlights: • Resistivity was evaluated in terms of solubility limit using different mechanisms. • Spectroscopic ellipsometry was used to determine the optical constants. • Samples with 1.1–3.1 at %Al were obtained to express the behavior of Al.

  8. Determination of Al concentration in Al doped ZnO using Auger spectra excited by Mo X-rays

    International Nuclear Information System (INIS)

    Toth, J.; Koever, L.; Cserny, I.; Varga, D.

    2006-01-01

    Complete text of publication follows. A good conductor with excellent transparency is of crucial importance for the window layer of CIGS solar cells. Al doped ZnO is a good candidate for this purpose, its conductivity depends on the concentration and chemical state of the Al dopant atoms. It was demonstrated that the non-conventional XPS using Mo X-rays for excitation is a very sensitive tool for the detection of Al, P, Si [1, 2, 3]. The present paper compares the experimental ratios for Zn/Al photoinduced peak intensity ratios obtained using both Al and Mo X-ray excitations. The Mo excited Zn/Al intensity ratios can be determined with higher selectivity and sensitivity than the Zn/Al intensity ratios excited by Al X-rays. The experiments were performed with a hemispherical deflector electron spectrometer [4]. The chemical state of the Al was identified to be close to that in Al 2 O 3 . The atomic concentrations were determined using a calibration curve based on ZnO/Al samples with known composition of Al. The energy dependent efficiency of the electron spectrometer was determined comparing REELS spectra of Cu specimen to standard spectra measured by K. Goto (Nagoya Institute of Technology, Japan). For evaluation of the Al atomic concentrations from the measured photoelectron intensities the photoionisation cross-sections of Band et al [5] and the IMFP data of S. Tanuma et al [6] and C.J. Powell and A. Jablonski [7] were used. (author)

  9. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    International Nuclear Information System (INIS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-01-01

    Highlights: • Al nano-concave arrays with different interpore distance (D c ) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al 2 O 3 spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D c and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D c ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D c ) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al 2 O 3 spacer was placed between the textured Al and the ZnO films (the Al/Al 2 O 3 -ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D c = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ (0,1) SPP resonance mode. In the Al/Al 2 O 3 -ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ (0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ (0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al 2 O 3 -ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  10. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    Energy Technology Data Exchange (ETDEWEB)

    Norek, Małgorzata, E-mail: mnorek@wat.edu.pl [Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); Łuka, Grzegorz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Włodarski, Maksymilian [Institute of Optoelectronics, Military University of Technology, Str. Kaliskiego 2, 00-908 Warszawa (Poland)

    2016-10-30

    Highlights: • Al nano-concave arrays with different interpore distance (D{sub c}) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al{sub 2}O{sub 3} spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D{sub c} and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D{sub c} ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D{sub c}) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al{sub 2}O{sub 3} spacer was placed between the textured Al and the ZnO films (the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D{sub c} = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ{sub (0,1)} SPP resonance mode. In the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ{sub (0,1)} plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ{sub (0,1)} SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al{sub 2}O{sub 3}-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further

  11. Fabrication of Al doped ZnO films using atmospheric pressure cold plasma

    International Nuclear Information System (INIS)

    Suzaki, Yoshifumi; Miyagawa, Hayato; Yamaguchi, Kenzo; Kim, Yoon-Kee

    2012-01-01

    Under atmospheric pressure, homogeneous non-equilibrium cold plasma was generated stably by high voltage pulsed power (1 kV, 20 kHz, 38 W) excitation of a mixture of He and O 2 gases produced by a dielectric barrier discharge setup. By feeding Bis (2 methoxy‐6-methyl‐3, 5-heptanedione) Zn (Zn-MOPD, C 18 H 3 O 6 Zn) and Tris (2-methoxy‐6‐methy l‐3, 5-heptanedione) Al (Al-MOPD, C 27 H 45 O 9 Al) into this plasma with He carrier gas, transparent flat Al-doped ZnO (ZnO:Al) films about 120–240 nm thick were prepared on glass substrates directly under the slit made into the cathode. Deposition rates of the films were about 20–40 nm/min. The concentration of Al was measured by inductively coupled plasma atomic emission spectroscopy. The composition ratio of Al to Zn was 7.8 mol% when the carrier He gas flow rate of Al-MOPD was 30 cm 3 . The average transmittance of all films was more than 85% in the wavelength range from 400 to 800 nm. When the composition ratio of Al/Zn was between 1.1 and 7.8 mol%, the optical band gap of the film increased from 3.28 to 3.40 eV. The resistivity of ZnO:Al film was 2.96 Ω cm at 1.3 mol% of Al/Zn. In addition, the microstructure of the films was studied by X-ray diffraction measurement and field emission scanning electron microscope observation. It was revealed that doped Al is substituted onto the Zn site of the ZnO crystalline structure in ZnO:Al films. - Highlights: ► An atmospheric pressure cold plasma generator generated stable glow discharge. ► We fabricated Al doped ZnO films on glass substrates using cold plasma. ► Al concentration measured by inductively coupled plasma atomic emission spectroscopy. ► The transmission spectrum and the resistivity of the films were measured. ► The microstructure of the films was studied.

  12. Effect of ZnO nanoparticles to mechanical properties of thixoformed Mg-Al-Zn alloy

    Science.gov (United States)

    Kusharjanto; Soepriyanto, Syoni; Ardian Korda, Akhmad; Adi Dwiwanto, Supono

    2018-03-01

    Magnesium alloys are lightweight metallic materials with low mechanical properties. Therefore, in order to meet the requirements in various industrial sector applications such as automotive, aerospace and electronic frame, improvement strength and ductility is required. The purpose of this research is to investigate the effect of adding ZnO nanoparticles to changes in microstructure, hardness, mechanical properties regarding with yield and ultimate strength. In this research, the molten Mg-Al-Zn alloy is added ZnO nanoparticles with a various range of 0, 1; 3 and 5 wt% and then cooling in the room temperature. Futhermore, Mg-Al-Zn-ZnO is heated at a temperature of 530 °C (in the semi-solid temperature range 470 °C–595 °C or 53% solid fraction) and then thixoforming process is performed. The characterization results of the thixoforming product show that, the microstructure is globular in shape with maximum hardness value of 107.14 VHN, the yield strength of 214.87 MPa, and the ultimate tensile strength of 311.25 MPa in 5 wt% ZnO nanoparticles.

  13. Effect of growth time to the properties of Al-doped ZnO nanorod arrays

    Science.gov (United States)

    Ismail, A. S.; Mamat, M. H.; Malek, M. F.; Saidi, S. A.; Yusoff, M. M.; Mohamed, R.; Sin, N. D. Md; Suriani, A. B.; Rusop, M.

    2018-05-01

    Aluminum (Al)-doped zinc oxide (ZnO) nanorod array films were successfully deposited at different growth time on zinc oxide (ZnO) seed layer coated glass substrate using sol-gel immersion method. The morphology images of the films showed that the thicknesses of the films were increased parallel with the increment of growth period. The surface topology of the films displayed an increment of roughness as the growth period increased. Optical properties of the samples exposed that the percentage of transmittances reduced at higher growth time. Besides, the Urbach energy of the films slightly increased as the immersion time increased. The current-voltage (I-V) measurement indicated that the resistance increased as the immersion time increased owing to the appearance of intrinsic layer on top of the nanorods.

  14. Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Chun-An [Department of Mechanical Engineering, National Central University, Taiwan (China); Lin, Jing-Chie, E-mail: jclincom@cc.ncu.edu.tw [Department of Mechanical Engineering, National Central University, Taiwan (China); Institute of Material Science and Engineering, National Central University, Taiwan (China); Chang, Yu-Fong [Department of Mechanical Engineering, National Central University, Taiwan (China); Chyou, San-Der [Power Research Institute, Taiwan Power Company, Taiwan (China); Peng, Kun-Cheng [Department of Materials Science and Engineering, Mingchi University of Technology, Taiwan (China)

    2012-06-01

    Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E{sub g}) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 Multiplication-Sign 10{sup -2} {Omega} cm to 3.29 Multiplication-Sign 10{sup -3} {Omega} cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV-visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier

  15. Evolution of voids in Al+-implanted ZnO probed by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Yamamoto, S.; Kawasuso, A.; Yuan, X.L.; Sekiguchi, T.; Suzuki, R.; Ohdaira, T.

    2004-01-01

    Undoped ZnO single crystals were implanted with aluminum ions up to a dose of 10 15 Al + /cm 2 . Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters, which are close to the size of V 8 , are generated by implantation. Postimplantation annealing shows that the Doppler broadening S parameter increases in the temperature range from 200 deg. C to 600 deg. C suggesting further agglomeration of vacancy clusters to voids. Detailed analyses of Doppler broadening spectra show formation of positronium after 600 deg. C annealing of the implanted samples with doses higher than 10 14 Al + /cm 2 . Positron lifetime measurements further suggest that the void diameter is about 0.8 nm. The voids disappear and the vacancy concentration reaches the detection limit after annealing at 600-900 deg. C. Hall measurement shows that the implanted Al + ions are fully activated with improved carrier mobility after final annealing. Cathodoluminescence measurements show that the ultraviolet luminescence is much stronger than the unimplanted state. These findings also suggest that the electrical and optical properties of ZnO become much better by Al + implantation and subsequent annealing

  16. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  17. Effects of morphology on the thermoelectric properties of Al-doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Van Nong, Ngo; Zhang, Wei

    2014-01-01

    The nanoparticles of Al-doped ZnO were successfully grown into rod-like and platelet-like morphologies by soft chemical routes. These powders were consolidated using spark plasma sintering (SPS) technique. The samples consolidated from rods and platelets exhibited characteristic structures...... consolidated from nanoparticles exhibited fine grains and highly distributed nanoprecipitates, resulting in a ZT value of 0.3 at 1223 K due to the lower thermal conductivity resulting from nanostructuring. Using the simple parabolic band model and Debye–Callaway thermal transport model, the anisotropic...

  18. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NARCIS (Netherlands)

    Garcia-Alonso Garcia, D.; Smit, S.; Bordihn, S.; Kessels, W.M.M.

    2013-01-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max <4 cm s-1) on n- and p-type

  19. Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oral, A. Yavuz [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey)]. E-mail: aoral@gyte.edu.tr; Bahsi, Z. Banu [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey); Aslan, M. Hasan [Department of Physics, Gebze Institute of Technology, Gebze 41400 (Turkey)

    2007-03-15

    Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol-gel technique. Zinc acetate, lithium acetate, and aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 deg. C. Crystallized films had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between 0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly increased the optical band gap of the films.

  20. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    International Nuclear Information System (INIS)

    Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R.J.; Phase, D.M.

    2016-01-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn_0_._9_7Al_0_._0_3O, Zn_0_._9_5Fe_0_._0_5O and Zn_0_._9_2Al_0_._0_3Fe_0_._0_5O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

  1. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Santosh, E-mail: skphysics@yahoo.co.in [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Deepika [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Tripathi, Malvika [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Vaibhav, Pratyush [Jaypee University of Engineering and Technology, Guna 473226, Madhya Pradesh (India); Kumar, Aman [Indian Institute of Technology, Roorkee (India); Kumar, Ritesh [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Choudhary, R.J., E-mail: ram@csr.res.in [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Phase, D.M. [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India)

    2016-12-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn{sub 0.97}Al{sub 0.03}O, Zn{sub 0.95}Fe{sub 0.05}O and Zn{sub 0.92}Al{sub 0.03}Fe{sub 0.05}O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

  2. Structure and Properties of Al and Ga- Doped ZnO

    Science.gov (United States)

    Temizer, Namik Kemal

    Recently there is tremendous interest in Transparent conducting oxide (TCO) research due to the unlimited and exciting application areas. Current research is mostly focused on finding alternative low cost and sustainable materials in order to replace indium tin oxide (ITO), which caused serious concern due to the increasing cost of indium and chemical stability issues of ITO. The primary aim of this research is to develop alternative TCO materials with superior properties in order to increase the efficiency in optoelectronic applications, as well as to study the properties of these materials to fully characterize them. We have grown Al and Ga-doped ZnO films with an optimized composition under different deposition conditions in order to understand the effect of processing parameters on the film properties. We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110muO-cm) values. The films grown in an ambient oxygen partial pressure (PO2 ) of 50 mTorr and at growth temperatures from room temperature to 600°C showed semiconducting behavior, whereas samples grown at a Po2 of 1 mTorr showed metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical and magnetic properties and such changes in physical properties are controlled predominantly by the defect content. To gain a better understanding of the conduction processes in doped ZnO thin films, we have studied the temperature variation of resistivity of some selected samples that showed some interesting behavior

  3. Exploration of Al-Doped ZnO in Photovoltaic Thin Films

    Science.gov (United States)

    Ciccarino, Christopher; Sahiner, M. Alper

    The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

  4. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, D.; Barman, P. B.; Hazra, S. K., E-mail: surajithazra@yahoo.co.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh-173234 (India); Dutta, D. [IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700032 (India); Kumar, M.; Som, T. [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  5. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  6. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

  7. Glancing angle deposited Al-doped ZnO nanostructures with different structural and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yildiz, A., E-mail: yildizab@gmail.com [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences, Yıldırım Beyazıt University, Ankara (Turkey); Cansizoglu, H. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Turkoz, M. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States); Department of Electrical-Electronic Engineering, Faculty of Engineering, University of Karabuk, Karabuk (Turkey); Abdulrahman, R.; Al-Hilo, Alaa; Cansizoglu, M.F.; Demirkan, T.M.; Karabacak, T. [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2015-08-31

    Al-doped ZnO (AZO) nanostructure arrays with different shapes (tilted rods, vertical rods, spirals, and zigzags) were fabricated by utilizing glancing angle deposition (GLAD) technique in a DC sputter growth unit at room temperature. During GLAD, all the samples were tilted at an oblique angle of about 90° with respect to incoming flux direction. In order to vary the shapes of nanostructures, each sample was rotated at different speeds around the substrate normal axis. Rotation speed did not only affect the shape but also changed the microstructural and optical properties of GLAD AZO nanostructures. The experimental results reveal that GLAD AZO nanostructures of different shapes each have unique morphological, crystal structure, mechanical, and optical properties determined by scanning electron microscopy, X-ray diffraction, transmission, and reflectance measurements. Vertical nanorods display the largest grain size, minimum strain, lowest defect density, and highest optical transmittance compared to the other shapes. Growth dynamics of GLAD has been discussed to explain the dependence of structural and optical properties of nanostructures on the substrate rotation speed. - Highlights: • Al-doped ZnO (AZO) nanostructures with different shapes were fabricated. • They have unique morphological, crystal structure, and optical properties. • Vertical AZO nanorods show an enhanced optical transmittance.

  8. Ab-initio valence band spectra of Al, In doped ZnO

    International Nuclear Information System (INIS)

    Palacios, P.; Sanchez, K.; Wahnon, P.

    2009-01-01

    We present the structural and electronic characterization of n-doped (Aluminium or Indium) ZnO and the effect of the doping on the calculated photoelectron spectroscopy (PES) spectra. The fully-relaxed calculations have been made using the density functional theory, including a Hubbard correlation term that increases the Zn-3d states binding energy, and which matches the experimental values. The effect of Oxygen vacancies is also included in our study. Our results show that the new Al or In-donor levels appearing in the conduction band hybridize with the Oxygen-2p states and help decrease the resistivity of these doped systems as was found experimentally. The calculated PES spectra show a small enhancement in the intensity close to the chemical potential as a result of these new Al or In levels

  9. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  10. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  11. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

    International Nuclear Information System (INIS)

    Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

    2015-01-01

    Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

  12. Mechanical properties of Al2O3-doped (2 wt.%) ZnO films

    International Nuclear Information System (INIS)

    Kuriki, Shina; Kawashima, Toshitaka

    2007-01-01

    We report a new method of evaluating the adhesion of Al 2 O 3 -doped (2 wt.%) ZnO (AZO) thin films. The AZO films were deposited by DC reactive magnetron sputtering on plastic film (PET: polyethyleneterephthalate) at various sputtering pressures, power, and reactive gas-flow ratios. The adhesion test of the films was carried out using the nanoindentation system. The fracture point as determined by the load-displacement curve occurred at the time of separation between the thin film and the substrate. The integration value of load and displacement to the fracture point is defined as the degree of adhesion (S W ). The AZO films showed that adhesion increase as sputtering power increases and sputtering pressure decreases

  13. Preparation, optical properties of ZnO, ZnO:Al nanorods and Y(OH)3:Eu nanotube

    International Nuclear Information System (INIS)

    Tran Kim Anh; Dinh Xuan Loc; Lam thi Kieu Giang; Le Quoc Minh; Strek, Wieslaw

    2009-01-01

    ZnO, ZnO:Al nanorods and Y(OH) 3 nanotubes have been prepared by the chemical vapor deposition and liquid phase synthesis. ZnO nanorods with diameter of 50 - 100 nm and length of 5 μm have been obtained by the CVD method. ZnO:Al nanorods were synthesized by the hydrothermal method from ZnSO 4. and Al 2 (SO 4 ) 3 . Nanorods and nanotubes of Y(OH) 3 with diameter of 200 nm and length of several micrometers were prepared by the soft template method. The crystal structure and morphology of rods and tubes were analyzed by the X-Ray diffraction and FE-SEM. The influence of fabrication conditions and Al, Eu concentration have been discussed.

  14. Preparation, optical properties of ZnO, ZnO:Al nanorods and Y(OH){sub 3}:Eu nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Tran Kim Anh; Dinh Xuan Loc; Lam thi Kieu Giang; Le Quoc Minh [Institute of Materials Science, Vietnamese Academy of Science and Technology 18 Hoang Quoc Viet, Nghia Do, Cau Giay, Hanoi (Viet Nam); Strek, Wieslaw [Institute of Low Temperature and Structure Research, PAN, 2 Okolna, Wroclaw (Poland)], E-mail: kimanh1949@gmail.com

    2009-01-01

    ZnO, ZnO:Al nanorods and Y(OH){sub 3} nanotubes have been prepared by the chemical vapor deposition and liquid phase synthesis. ZnO nanorods with diameter of 50 - 100 nm and length of 5 {mu}m have been obtained by the CVD method. ZnO:Al nanorods were synthesized by the hydrothermal method from ZnSO{sub 4.} and Al{sub 2}(SO{sub 4}){sub 3}. Nanorods and nanotubes of Y(OH){sub 3} with diameter of 200 nm and length of several micrometers were prepared by the soft template method. The crystal structure and morphology of rods and tubes were analyzed by the X-Ray diffraction and FE-SEM. The influence of fabrication conditions and Al, Eu concentration have been discussed.

  15. Electrodeposition of nanoporous ZnO on Al-doped ZnO leading to a highly organized structure for integration in Dye Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Renou G.

    2010-10-01

    Full Text Available In the present study, we propose an improvement of the anode configuration in Zinc Oxide based Dye Sensitized Solar Cells (DSSC. Instead of the classical configuration, which is composed by two different metal oxides: one transparent conducting oxide (TCO for the substrate and one nanostructured metal oxide for supporting the dye, the new approach is to use ZnO as unique material. Thus, nanoporous zinc oxide films have been electrodeposited on a sputtered Al doped ZnO layers with varying thicknesses up to 6 μm. The evolution of the porosity of the structure has been studied by scanning electron microscope (SEM and electrochemical impedance spectroscopy and compared with standard nanoporous ZnO grown on fluorine doped tin oxide (SnO2:F noted FTO. This results firstly in the modification of the nanoporous structure morphology and secondly a better adhesion between the nanoporous layer and the substrate. Organization in the nanoporous material is enhanced with regular pores arrays and perpendicular to the substrate. Dye sensitized solar cells based on this simplified architecture present efficiencies up to 4.2% and 4.5% with N719 and D149 respectively as sensitizers. Higher fill factor and Voc are found in comparison with the one obtained for deposition on the classical transparent conducting oxide (FTO, which denote improved electrical transfer properties.

  16. Variation in Structural and Optical Properties of Al Doped ZnO Nanoparticles Synthesized by Sol-gel Process

    Directory of Open Access Journals (Sweden)

    Vanaja Aravapalli

    2017-04-01

    Full Text Available This article focuses on analyzing structural and optical properties of Al doped ZnO (AZO synthesized with two different precursors aluminum chloride and aluminum nitrate. The nanoparticles were successfully fabricated and characterized at room temperature by sol-gel process. The objective of improving properties of ZnO nanoparticles by introducing dopants was successful with formation of nanoparticles having different crystalline sizes, optical absorption and luminescence properties. The two different sources influenced properties of ZnO. The particles with less crystalline size obtained from aluminum nitrate. Change in morphology from spherical to bar like morphology proved from SEM spectra. Presence of functional groups predicted from FTIR spectra. PL spectra proved UV emission and visible emission for AZO nanoparticles synthesized using dopant sources aluminum chloride and aluminum nitrate respectively. The obtained properties prove successful utilization of AZO nanoparticles as building materials in fabrication of optoelectronic devices.

  17. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    International Nuclear Information System (INIS)

    Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

    2012-01-01

    ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  18. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2012-05-15

    ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  19. Synthesis Structural and Optical Properties Of (Co, Al) co-doped ZnO Nano Particles

    Science.gov (United States)

    Swapna, P.; Venkatramana Reddy, S.

    2018-02-01

    We prepared (Co, Al) co-doped ZnO nanostructures using the method chemical co-precipitation successfully, at room temperature using PEG (Poly ethylene glycol) as stabilizing agent. Samples are prepared with different concentrations by keeping aluminium at 5 mol percent constant and varying the concentration of cobalt from 1 to 5 mol percent. After the preparation all the samples are carefully subjected to characterizations such as XRD, SEM with EDS, TEM, PL and UV-VIS-NIR. XRD pattern shows that all the samples possess hexagonal wurtzite crystal structure having no secondary phases pertaining to Al or cobalt, which shows successful dissolution of the dopents. TEM results shows the accurate size of particles and is confirmed the XRD data. SEM images of all the samples shows that particles are in nearly spherical shape, EDS spectrum reveals that incorporation of cobalt and aluminum in host lattice. PL spectrum shows that all the samples containing two prominent peaks centered at 420 nm and 446 nm. UV-VIS-NIR spectra has shown three absorptions peaks in the range of wavelength 550 nm to 700 nm, which are ascribed as typical d-d transitions of cobalt ions.

  20. Synthesis Al complex and investigating effect of doped ZnO nanoparticles in the electrical and optical efficiency of OLEDS

    Science.gov (United States)

    Shahedi, Zahra; Jafari, Mohammad Reza

    2017-01-01

    In this study, an organometallic complex based on aluminum ions is synthesized. And it is utilized as fluorescent material in the organic light-emitting diodes (OLEDs). The synthesized complex was characterized using XRD, UV-Vis, FT-IR as well as PL spectroscopy analyses. The energy levels of Al complex were determined by cyclic voltammetry measurements. Then, the effects of ZnO nanoparticles (NPs) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), PEDOT:PSS, on the electrical and optical performance of the organic light-emitting diodes have been investigated. For this purpose, two samples containing ITO/PEDOT:PSS/PVK/Alq3/PBD/Al with two different concentration and two samples containing ITO/PEDOT:PSS:ZnO/PVK/Alq3/PBD/Al with two different concentration were prepared. Then, hole transport, electron transport and emissive layers were deposited by the spin coating method and the cathode layer (Al) was deposited by the thermal evaporation method. The OLED simulation was also done by constructing the model and choosing appropriate parameters. Then, the experimental data were collected and the results interpreted both qualitatively and quantitatively. The results of the simulations were compared with experimental data of the J-V spectra. Comparing experimental data and simulation results showed that the electrical and optical efficiency of the samples with ZnO NPs is appreciably higher than the samples without ZnO NPs.

  1. TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

    Science.gov (United States)

    Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

  2. The Influence of α- and γ-Al2O3 Phases on the Thermoelectric Properties of Al-doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Van Nong, Ngo; Le, Thanh Hung

    2013-01-01

    A systematic investigation on the microstructure and thermoelectric properties of Al-doped ZnO using α- and γ-Al2O3 as dopants was conducted in order to understand the doping effect and its mechanism. The samples were prepared by the spark plasma sintering technique from precursors calcined...... at various temperatures. Clear differences in microstructure and thermoelectric properties were observed between the samples doped with α- and γ-Al2O3. At any given calcination temperature, γ-Al2O3 resulted in the formation of a larger amount of the ZnAl2O4 phase in the Al-doped ZnO samples. The average...... grain size was found to be smaller for the γ-Al2O3-doped samples than that for the α-Al2O3-doped ones under the same sintering condition. It is proposed that the ZnAl2O4 phase is the reason for the observed suppression of grain growth and also for the slightly reduced lattice thermal conductivity...

  3. Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

    Directory of Open Access Journals (Sweden)

    Shibu Saha

    2011-12-01

    Full Text Available Highly c-axis oriented Al and Fe co-doped ZnO (ZAF thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase, was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ∼ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor.

  4. Genesis of flake-like morphology and dye-sensitized solar cell performance of Al-doped ZnO particles: a study

    International Nuclear Information System (INIS)

    Sengupta, D.; Mondal, B.; Mukherjee, K.

    2017-01-01

    In dye-sensitized solar cell (DSSC) application, the particulate morphologies of photo-anode facilitate efficient dye loading and thus lead to better photo-conversion efficiency than their thin film counterpart. However, till date, the electronic and optical properties as well as the DSSC application of Al-doped ZnO (AZO) particles as photo-anode material is studied less than thin films. Herein, phase formation behavior, morphology evolution, optical properties, and dye-sensitized solar cell performance of wet chemically prepared ZnO and AZO (dopant level: 1–4 mol%) particles are studied. It is found that Al doping modulates significantly the ZnO morphology which in turn results the maximum dye adsorption as well as best photo-conversion efficiency at optimum dopant concentration. Specifically, the nanoparticle of ZnO turns predominantly to flake-like morphology with a higher surface area when 2 mol% Al is doped. Such morphology modulation is expected, since the crystallinity, lattice parameters, and lattice strain of ZnO changes appreciably with Al doping. The variations of optical properties (absorbance, diffused reflectance, and band gap) of AZO materials as compared to primitive ZnO are also identified through UV-vis studies. An attempt is made here to correlate the structural features with the photovoltaic performances of ZnO and AZO.

  5. Genesis of flake-like morphology and dye-sensitized solar cell performance of Al-doped ZnO particles: a study

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, D.; Mondal, B.; Mukherjee, K., E-mail: kalisadhanm@yahoo.com [CSIR-Central Mechanical Engineering Research Institute, Centre for Advanced Materials Processing (India)

    2017-03-15

    In dye-sensitized solar cell (DSSC) application, the particulate morphologies of photo-anode facilitate efficient dye loading and thus lead to better photo-conversion efficiency than their thin film counterpart. However, till date, the electronic and optical properties as well as the DSSC application of Al-doped ZnO (AZO) particles as photo-anode material is studied less than thin films. Herein, phase formation behavior, morphology evolution, optical properties, and dye-sensitized solar cell performance of wet chemically prepared ZnO and AZO (dopant level: 1–4 mol%) particles are studied. It is found that Al doping modulates significantly the ZnO morphology which in turn results the maximum dye adsorption as well as best photo-conversion efficiency at optimum dopant concentration. Specifically, the nanoparticle of ZnO turns predominantly to flake-like morphology with a higher surface area when 2 mol% Al is doped. Such morphology modulation is expected, since the crystallinity, lattice parameters, and lattice strain of ZnO changes appreciably with Al doping. The variations of optical properties (absorbance, diffused reflectance, and band gap) of AZO materials as compared to primitive ZnO are also identified through UV-vis studies. An attempt is made here to correlate the structural features with the photovoltaic performances of ZnO and AZO.

  6. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Kenanakis, G., E-mail: gkenanak@iesl.forth.gr [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Katsarakis, N. [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece)

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  7. Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

    Science.gov (United States)

    Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

    2018-06-01

    Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

  8. Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Menéndez-Proupin, Eduardo [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa, Santiago (Chile); Palacios, Pablo, E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FAIAN, E.T.S.I. Aeronáutica y del Espacio, UPM, Pz. Cardenal Cisneros 3, 28040 Madrid (Spain); Wahnón, Perla [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TFO, E.T.S.I. Telecomunicación, UPM, Ciudad Universitaria, 28040 Madrid (Spain)

    2015-06-15

    Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al{sub i}, and complexes Ga{sub Zn}-O{sub i}, and Al{sub Zn}-O{sub i}.

  9. The formation of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Stojadinović, Stevan, E-mail: sstevan@ff.bg.ac.rs [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Vasilić, Rastko [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Radić, Nenad [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia); Tadić, Nenad [University of Belgrade, Faculty of Physics, Studentski trg 12-16, 11000 Belgrade (Serbia); Stefanov, Plamen [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, 1113 Sofia (Bulgaria); Grbić, Boško [University of Belgrade, Institute of Chemistry, Technology and Metallurgy, Department of Catalysis and Chemical Engineering, Njegoševa 12, 11000 Belgrade (Serbia)

    2016-07-30

    Highlights: • Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al{sub 2}O{sub 3}/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al{sub 2}O{sub 3}/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na{sub 2}WO{sub 4}·2H{sub 2}O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al{sub 2}O{sub 3}, ZnO, metallic tungsten and WO{sub 3}. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al{sub 2}O{sub 3}/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al{sub 2}O{sub 3}/ZnO coatings is higher thanof undoped Al{sub 2}O{sub 3}/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na{sub 2}WO{sub 4}·2H{sub 2}O. Tungsten in Al{sub 2}O{sub 3}/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the

  10. The formation of tungsten doped Al_2O_3/ZnO coatings on aluminum by plasma electrolytic oxidation and their application in photocatalysis

    International Nuclear Information System (INIS)

    Stojadinović, Stevan; Vasilić, Rastko; Radić, Nenad; Tadić, Nenad; Stefanov, Plamen; Grbić, Boško

    2016-01-01

    Highlights: • Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation (PEO). • Coatings are mainly composed of alpha alumina, ZnO and metallic tungsten. • Photocatalytic activity of doped Al_2O_3/ZnO coatings is higher than of undoped ones. • The increase of photoluminescence corresponds to decrease of photocatalytic activity. • Tungsten acts as a charge trap to reduce the recombination rate of electron/hole pairs. - Abstract: Tungsten doped Al_2O_3/ZnO coatings are formed by plasma electrolytic oxidation of aluminum substrate in supporting electrolyte (0.1 M boric acid + 0.05 M borax + 2 g/L ZnO) with addition of different concentrations of Na_2WO_4·2H_2O. The morphology, crystal structure, chemical composition, and light absorption characteristics of formed surface coatings are investigated. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that formed surface coatings consist of alpha and gamma phase of Al_2O_3, ZnO, metallic tungsten and WO_3. Obtained results showed that incorporated tungsten does not have any influence on the absorption spectra of Al_2O_3/ZnO coatings, which showed invariable band edge at about 385 nm. The photocatalytic activity of undoped and tungsten doped Al_2O_3/ZnO coatings is estimated by the photodegradation of methyl orange. The photocatalytic activity of tungsten doped Al_2O_3/ZnO coatings is higher thanof undoped Al_2O_3/ZnO coatings; the best photocatalytic activity is ascribed to coatings formed in supporting electrolyte with addition of 0.3 g/L Na_2WO_4·2H_2O. Tungsten in Al_2O_3/ZnO coatings acts as a charge trap, thus reducing the recombination rate of photogenerated electron-hole pairs. The results of PL measurements are in agreement with photocatalytic activity. Declining PL intensity corresponds to increasing photocatalytic activity of the coatings, indicating slower recombination of electron-hole pairs.

  11. ZnO and Al doped ZnO thin films deposited by Spray Plasma: Effect of the growth time and Al doping on microstructural, optical and electrical properties

    International Nuclear Information System (INIS)

    Baba, Kamal; Lazzaroni, Claudia; Nikravech, Mehrdad

    2015-01-01

    Nanostructured zinc oxide (ZnO) and Al doped ZnO (ZnO:Al) thin films are deposited on glass substrate by the Spray Plasma technique. Zinc nitrate and aluminium nitrate are used as Zn and Al precursors, respectively. The effect of the growth time on structural and optical properties of undoped films is studied by X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy. The effect of Al doping on microstructural, optical and electrical characteristics of ZnO:Al films is also investigated. The results show that the grain size and the film thickness both increase with the growth time. The band gap of the layers varies from 3.17 to 3.24 eV depending on the thickness. The increase of the Al doping results in the enlargement of the peak (002) and the shift of its position to higher 2θ values. Average optical transmittance decreases from 90 to 65% with the growth time because of the thickness increase while there is no significant influence of the aluminium doping on the transmittance which is above 80% in most of the visible and near-IR range for all ZnO:Al films. The electrical properties characterized by Hall measurements show that all the deposited films exhibit high resistivity, between 4 and 10 4 Ω cm. The carrier concentration decreases from 2.10 19 to 2.10 13 cm −3 when the concentration of Al increases from 1.5 to 5 atm%. - Highlights: • The original Spray Plasma technique is used for ZnO and ZnO:Al thin film deposition. • Investigation of the effect of growth time and Al doping on the structural and optical properties • Increase of grain size and film thickness with the growth time • Optical transmittance decreases from 90 to 65% with the growth time and is above 80% for ZnO:Al films in UV–Vis-NIR range. • The peak position of the (002) plane is shifted to high 2θ values with Al doping.

  12. Experimental and theoretical investigations on magnetic behavior of (Al,Co) co-doped ZnO nanoparticles.

    Science.gov (United States)

    Jayakumar, O D; Achary, S N; Sudakar, C; Naik, R; Salunke, H G; Rao, Rekha; Peng, X; Ahuja, R; Tyagi, A K

    2010-08-01

    We present the structural and magnetic properties of Zn(0.95-x)Co(0.05)Al(x)O (x = 0.0 to 0.1) nanoparticles, synthesized by a novel sol-gel route followed by pyrolysis. Powder X-ray diffraction data confirms the formation of a single phase wurtzite type ZnO structure for all the compositions. The Zn(0.95)Co(0.05)O nanoparticles show diamagnetic behavior at room temperature. However, when Al is co-doped with Co with x = 0.0 to 0.10 in Zn(0.95-x)Co(0.05)Al(x)O, a systematic increase in ferromagnetic moment is observed up to x = 0.07 at 300 K. Above x = 0.07 (e.g. for x = 0.10) a drastic decrease in ferromagnetic nature is observed which is concomitant with the segregation of poorly crystalline Al rich ZnO phase as evidenced from TEM studies. Theoretical studies using density functional calculations on Zn(0.95-x)Co(0.05)Al(x)O suggest that the partial occupancy of S2 states leads to an increased double exchange interaction favoring the ferromagnetic ground states. Such ferromagnetic interactions are favorable beyond a threshold limit. At a high level doping of Al, the exchange splitting is reduced, which suppresses the ferromagnetic ordering.

  13. Origin of ferromagnetism in diluted magnetic semiconductors; Moegliche Ursachen des Ferromagnetismus verduennter magnetischer Halbleiter

    Energy Technology Data Exchange (ETDEWEB)

    Biegger, E.

    2007-02-14

    In this work Mn-doped Ge single crystals and thin films of the metal doped oxidic semiconductors ZnO and SnO{sub 2} were prepared and investigated in detail. Structural, magnetic, and electronic properties of Mn-doped Ge single crystals (0ZnO and SnO{sub 2} films (Me=Co,Fe; 0.05ZnO is related to oxygen-related defects. Fe-doped ZnO samples do not show ferromagnetic behaviour at all, although X-ray absorption spectroscopy (XAS) shows that Fe is present as Fe{sup 2+} and Fe{sup 3+}. XAS at the Co L{sub 2

  14. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  15. Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

    Science.gov (United States)

    Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

    2017-07-05

    To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

  16. Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

    2014-01-01

    Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

  17. Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

    Science.gov (United States)

    Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

    2018-06-01

    ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

  18. The Influence of Spark Plasma Sintering Temperature on the Microstructure and Thermoelectric Properties of Al,Ga Dual-Doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Le, Thanh Hung; Van Nong, Ngo

    2013-01-01

    ZnO dual-doped with Al and Ga was prepared by spark plasma sintering using different sintering temperatures. The microstructural evolution and thermoelectric properties of the samples were investigated in detail. The samples obtained with sintering temperature above 1223 K had higher relative...... of ZnO particles and microstructure evolution at different sintering temperatures were investigated by simulation of the self-Joule-heating effect of the individual particles....

  19. Toxicity of nanoparticulate and bulk ZnO, Al2O3 and TiO2 to the nematode Caenorhabditis elegans

    International Nuclear Information System (INIS)

    Wang Huanhua; Wick, Robert L.; Xing Baoshan

    2009-01-01

    Limited information is available on the environmental behavior and associated potential risk of manufactured oxide nanoparticles (NPs). In this research, toxicity of nanoparticulate and bulk ZnO, Al 2 O 3 and TiO 2 were examined to the nematode Caenorhabditis elegans with Escherichia coli as a food source. Parallel experiments with dissolved metal ions from NPs were also conducted. The 24-h median lethal concentration (LC 50 ) and sublethal endpoints were assessed. Both NPs and their bulk counterparts were toxic, inhibiting growth and especially the reproductive capability of the nematode. The 24-h LC 50 for ZnO NPs (2.3 mg L -1 ) and bulk ZnO was not significantly different, but significantly different between Al 2 O 3 NPs (82 mg L -1 ) and bulk Al 2 O 3 (153 mg L -1 ), and between TiO 2 NPs (80 mg L -1 ) and bulk TiO 2 (136 mg L -1 ). Oxide solubility influenced the toxicity of ZnO and Al 2 O 3 NPs, but nanoparticle-dependent toxicity was indeed observed for the investigated NPs. - ZnO, Al 2 O 3 and TiO 2 nanoparticles are more toxic than their bulk counterparts to the nematode, Caenorhabditis elegans

  20. Toxicity of nanoparticulate and bulk ZnO, Al{sub 2}O{sub 3} and TiO{sub 2} to the nematode Caenorhabditis elegans

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huanhua; Wick, Robert L. [Department of Plant, Soil and Insect Sciences, University of Massachusetts, Stockbridge Hall, Amherst, MA 01003 (United States); Xing Baoshan [Department of Plant, Soil and Insect Sciences, University of Massachusetts, Stockbridge Hall, Amherst, MA 01003 (United States)], E-mail: bx@pssci.umass.edu

    2009-04-15

    Limited information is available on the environmental behavior and associated potential risk of manufactured oxide nanoparticles (NPs). In this research, toxicity of nanoparticulate and bulk ZnO, Al{sub 2}O{sub 3} and TiO{sub 2} were examined to the nematode Caenorhabditis elegans with Escherichia coli as a food source. Parallel experiments with dissolved metal ions from NPs were also conducted. The 24-h median lethal concentration (LC{sub 50}) and sublethal endpoints were assessed. Both NPs and their bulk counterparts were toxic, inhibiting growth and especially the reproductive capability of the nematode. The 24-h LC{sub 50} for ZnO NPs (2.3 mg L{sup -1}) and bulk ZnO was not significantly different, but significantly different between Al{sub 2}O{sub 3} NPs (82 mg L{sup -1}) and bulk Al{sub 2}O{sub 3} (153 mg L{sup -1}), and between TiO{sub 2} NPs (80 mg L{sup -1}) and bulk TiO{sub 2} (136 mg L{sup -1}). Oxide solubility influenced the toxicity of ZnO and Al{sub 2}O{sub 3} NPs, but nanoparticle-dependent toxicity was indeed observed for the investigated NPs. - ZnO, Al{sub 2}O{sub 3} and TiO{sub 2} nanoparticles are more toxic than their bulk counterparts to the nematode, Caenorhabditis elegans.

  1. Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

    International Nuclear Information System (INIS)

    Kim, Soaram; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jaeyoung; Lee, Sangheon; Kim, Jong Su; Kim, Jin Soo; Kim, Do Yeob; Kim, Sungo

    2013-01-01

    The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities (I NBE /I DLE ) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies

  2. Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Nam, Giwoong; Park, Hyunggil; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Lee, Sangheon; Kim, Jong Su [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Kim, Do Yeob; Kim, Sungo [Clemson Univ., Clemson (United States)

    2013-04-15

    The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities (I{sub NBE}/I{sub DLE}) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

  3. Structural, Morphological, and LPG Sensing Properties of Al-Doped ZnO Thin Film Prepared by SILAR

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-01-01

    Full Text Available Undoped and aluminum doped zinc oxide (AZO thin films were deposited on glass substrates by successive ion layer adsorption and reaction (SILAR technique from ammonium zincate complex. The thin films are characterized by X-ray diffraction (XRD and scanning electron microscopy (SEM for their structural and morphological studies. Both undoped and Al-doped film show strong preferred c-axis orientation. The texture coefficient (TC of the film along (002 direction increases due to Al incorporation. SEM micrograph shows round shaped particles for pure ZnO. However AZO films show particles with off spherical shape and compact interconnected grains. Sensitivity of the film in presence of 80% LEL (lower explosive limit of LPG increases with temperature and is maximum at 325°C. Significantly high sensitivity of 87% with reasonably fast response was observed for 1% Al-doped ZnO (AZO film in presence of 1.6 vol% LPG at 325°C.

  4. Evaluation of mechanical hardness and fracture toughness of Co and Al co-doped ZnO

    International Nuclear Information System (INIS)

    Siddheswaran, R.; Mangalaraja, R.V.; Avila, Ricardo E.; Manikandan, D.; Esther Jeyanthi, C.; Ananthakumar, S.

    2012-01-01

    Combustion synthesized nanocrystalline Co and Al co-doped ZnO powders [(Zn 1−x−y Co x Al y O; x=0.04, 0.03, 0.02; y=0.01, 0.02, 0.03)] were fabricated into cylindrical discs by uni-axial pressing and sintered intentionally at 1000 °C for 2 h to assess the mechanical performance. The crystallinity of the pure and doped ZnO was confirmed by X-ray diffraction analysis. The microstructures of the sintered samples were investigated by scanning electron microscopy (SEM) to examine the density, porosity, grain size and its distribution. Grains of 0.5–3 μm were observed for the samples sintered at 1000 °C. The mechanical properties such as micro-hardness, fracture toughness and strain hardening co-efficient were investigated by the Vickers indentation method. It was found that the crack mode observed during the indentation on the samples belongs to median cracks under a load of 19.6 N. Also, the hardness was enhanced with increasing mol% of Co, while the trend was reversed with the increase of Al content. In addition, the strain hardening coefficient and fracture toughness were calculated using the indentation data.

  5. Nanoscale formation of new solid-state compounds by topochemical effects: The interfacial reactions ZnO with Al2O3 as a model system

    International Nuclear Information System (INIS)

    Pin, Sonia; Ghigna, Paolo; Spinolo, Giorgio; Quartarone, Eliana; Mustarelli, Piercarlo; D'Acapito, Francesco; Migliori, Andrea; Calestani, Gianluca

    2009-01-01

    The chemical reactivity of thin layers (ca. 10 nm thick) of ZnO deposited onto differently oriented Al 2 O 3 single crystals has been investigated by means of atomic force microscopy inspections and X-ray absorption spectroscopy at the Zn-K edge. The (0001) ZnO -parallel (112-bar0) sapphire interface yields the ZnAl 2 O 4 spinel and a quite stable film morphology. Instead, the (112-bar0) ZnO -parallel (11-bar02) sapphire and (0001) ZnO -parallel (0001) sapphire interfaces give origin to a new compound (or, possibly, even two new compounds), whose chemical nature is most likely that of a ZnO/Al 2 O 3 phase, with still unknown composition and crystal structure. In addition, in the last two cases, films collapse into prismatic twins of ca. 1 μm in dimension. These experimental findings demonstrate that in a solid-state reaction, the topotactical relationships between the reacting solids are of crucial importance not only in determining the kinetic and mechanisms of the process in its early stages, but even the chemical nature of the product. - Graphical abstract: EXAFS Fourier transforms and morphology of different reactive interfaces between ZnO and Al 2 O 3 .

  6. Effect of Al doping on microstructure and optical band gap of ZnO ...

    Indian Academy of Sciences (India)

    micrograph shows that pure ZnO particles are spherical shaped. ... tions) on the other hand, are versatile, simple and cost-effective compared to ..... [45] G Knuyt, C Quaeyhagens, J D'Haen and L M Stals, Thin Solid Films 258, 159 (1995).

  7. Atomic layer deposition of B-doped ZnO using triisopropyl borate as the boron precursor and comparison with Al-doped ZnO

    NARCIS (Netherlands)

    Garcia - Alonso, D.; Potts, S.E.; Helvoirt, van C.A.A.; Verheijen, M.A.; Kessels, W.M.M.

    2015-01-01

    Doped ZnO films are an important class of transparent conductive oxides, with many applications demanding increased growth control and low deposition temperatures. Therefore, the preparation of B-doped ZnO films by atomic layer deposition (ALD) at 150 °C was studied. The B source was triisopropyl

  8. A simple method to prepare ZnO and Al(OH)3 nanorods by the reaction of the metals with liquid water

    International Nuclear Information System (INIS)

    Panchakarla, L.S.; Shah, M.A.; Govindaraj, A.; Rao, C.N.R.

    2007-01-01

    Reaction of liquid water with Zn and Al powders and foils have been investigated in the 25-75 deg. C range. The reaction of Zn metal powder with water in this temperature range yields ZnO nanorods. The diameter of the nanorods decreases slightly with the increase in the reaction temperature, accompanied by an increase in the relative intensity of UV emission band. Zn metal foils also yield ZnO nanorods on reaction with water in the 25-75 deg. C range. Reaction of Al metal powder or foil with water in the 25-75 deg. C range yields Al(OH) 3 nanorods. The formation of ZnO and Al(OH) 3 nanorods by the reaction of the metals with water is suggested to occur because of the decomposition of water by the metal giving hydrogen. - Graphical abstract: The reaction of water at a temperature in the 25-27 deg. C range with zinc metal gives rise to ZnO nanorods; with Al metal water gives Al(OH) 3 nanorods

  9. Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Pan, Zhanchang; Luo, Junming; Tian, Xinlong; Wu, Shoukun; Chen, Chun; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2014-01-01

    Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

  10. Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Gabás

    2014-01-01

    Full Text Available Al- and Ga-doped sputtered ZnO films (AZO, GZO are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

  11. On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Ottsen, Tobias Sand; Stamate, Eugen

    2016-01-01

    -pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase......The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate...... over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility....

  12. Highly conductive Al-doped tetra-needle-like ZnO whiskers prepared by a solid state method

    International Nuclear Information System (INIS)

    Wan Cuifeng; Tan Hairen; Jin Shengming; Yang Huaming; Tang Motang; He Jing

    2008-01-01

    Tetra-needle-like zinc oxide whiskers (T-ZnO W ) were doped with Al 3+ by a solid state method. In this study, modification conditions were thoroughly investigated to obtain low resistivity T-ZnO W , without destroying the tetra-needle-like structure. The Al-doped T-ZnO W was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transition infrared (FT-IR) spectra and electrical resistance measurement. The SEM and XRD results indicated that the tetra-needle-like structure of ZnO whiskers could be well maintained after modification and the doped (0 0 2) face was preferred. FT-IR results showed that the decrease of resistivity of Al-doped T-ZnO W resulted from formation of [AlO 4 ] configuration in T-ZnO W bulk. Experiment results showed that the annealing temperature, doping concentration and type of Al sources affected the resistivity of T-ZnO W considerably. The optimum Al-doped concentration was 7.0 at.% and the resistivity of T-ZnO W could be considerably decreased from 10 8 to 10 2 Ω cm

  13. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  14. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

    International Nuclear Information System (INIS)

    Wang Chong; He Yun-Long; Zheng Xue-Feng; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2013-01-01

    AlGaN/GaN high-electron-mobility transistors (HEMTs) with Al-doped ZnO (AZO) transparent gate electrodes are fabricated, and Ni/Au/Ni-gated HEMTs are produced in comparison. The AZO-gated HEMTs show good DC characteristics and Schottky rectifying characteristics, and the gate electrodes achieve excellent transparencies. Compared with Ni/Au/Ni-gated HEMTs, AZO-gated HEMTs show a low saturation current, high threshold voltage, high Schottky barrier height, and low gate reverse leakage current. Due to the higher gate resistivity, AZO-gated HEMTs exhibit a current—gain cutoff frequency (f T ) of 10 GHz and a power gain cutoff frequency (f max ) of 5 GHz, and lower maximum oscillation frequency than Ni/Au/Ni-gated HEMTs. Moreover, the C—V characteristics are measured and the gate interface characteristics of the AZO-gated devices are investigated by a C—V dual sweep

  15. A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Turgut, G. [Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, 25240 (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey); Sonmez, E. [Department of Physics, Faculty of K.K. Education, Ataturk University, Erzurum, 25240 (Turkey); Ozcelik, F.S. [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey)

    2016-04-15

    Highlights: • Eu incorporated ZnO thin films were grown by sol–gel spin coating. • The influence of Eu contribution on features of ZnO was investigated. • Al/ZnO:Eu/p-Si heterojunction diodes were also fabricated. • The diode parameters were calculated from I–V measurements. - Abstract: In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 × 10{sup −3} and 2.43 nm to the values of 35.56 nm, 1.98 × 10{sup −3} and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3.328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I–V) measurements at the room temperature.

  16. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

    KAUST Repository

    Jagadamma, Lethy Krishnan; Al-Senani, Mohammed; Amassian, Aram

    2015-01-01

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems

  17. Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure

    CSIR Research Space (South Africa)

    Jule, L

    2017-07-01

    Full Text Available : 151-155 Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure Jule L Dejene F Ali AG Roro KT Mwakikunga BW ABSTRACT: In this work, electron paramagnetic resonance (EPR...

  18. The Influence of Spark Plasma Sintering Temperature on the Microstructure and the Thermoelectric Properties of Al, Ga dually-doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Le, Thanh Hung; Van Nong, Ngo

    2012-01-01

    Al, Ga dually-doped ZnO was prepared by spark plasma sintering with different sintering temperatures. The microstructural evolution and thermoelectric properties of the samples were investigated in detail. The samples with a sintering temperature above 1223K obtained higher relative densities...

  19. Enhanced Doping Efficiency of Al-Doped ZnO by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide as an Alternative Aluminum Precursor

    NARCIS (Netherlands)

    Wu, Y.; Potts, S.E.; Hermkens, P.M.; Knoops, H.C.M.; Roozeboom, F.; Kessels, W.M.M.

    2013-01-01

    Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from ∼10% to almost 60% using dimethylaluminum

  20. Antibacterial activity against Escherichia coli and characterization of ZnO and ZnO–Al2O3 mixed oxide nanoparticles

    Directory of Open Access Journals (Sweden)

    Ertan Şahin

    2017-02-01

    Full Text Available In order to achieve better antibacterial water insoluble nanoparticles (Nanoparticles of ZnO and ZnO–Al2O3 were studied. ZnO–Al2O3 mixed oxide nanoparticles were produced from a solution containing Zn(AC2⋅2H2O and AlCl3 by Solvothermal method. The calcination process of the ZnO–Al2O3 composite nanoparticles brought forth polycrystalline one phase ZnO–Al2O3 nanoparticles of 30–50 nm in diameters. ZnO and ZnO–Al2O3 were crystallized into würtzite and rock salt structures, respectively. The structural properties of this sample were analyzed by XRD and compared with bulk case of these samples. Antibacterial effectiveness of the ZnO and ZnO–Al2O3 nanoparticles were tested against general Escherichia coli (E. coli ATCC 25922 and E. coli O157:H7 by measuring the growth through optical density and digital counting of live–dead cells. Minimum inhibitory concentration values against four representative bacteria along with E. coli O157:H7 were also obtained.

  1. Mechanical properties of Al{sub 2}O{sub 3}-doped (2 wt.%) ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Kuriki, Shina [Core Technology Development Group, Core Component Business Unit, Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)], E-mail: Shina.Kuriki@jp.sony.com; Kawashima, Toshitaka [Core Technology Development Group, Core Component Business Unit, Sony Corporation, 6-7-35 Kitashinagawa, Shinagawa-ku, Tokyo 141-0001 (Japan)], E-mail: Toshitaka.Kawashima@jp.sony.com

    2007-10-15

    We report a new method of evaluating the adhesion of Al{sub 2}O{sub 3}-doped (2 wt.%) ZnO (AZO) thin films. The AZO films were deposited by DC reactive magnetron sputtering on plastic film (PET: polyethyleneterephthalate) at various sputtering pressures, power, and reactive gas-flow ratios. The adhesion test of the films was carried out using the nanoindentation system. The fracture point as determined by the load-displacement curve occurred at the time of separation between the thin film and the substrate. The integration value of load and displacement to the fracture point is defined as the degree of adhesion (S{sub W}). The AZO films showed that adhesion increase as sputtering power increases and sputtering pressure decreases.

  2. Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

    Science.gov (United States)

    Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

    2017-07-01

    Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

  3. Comparative investigation on cation-cation (Al-Sn) and cation-anion (Al-F) co-doping in RF sputtered ZnO thin films: Mechanistic insight

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, Arindam; Basak, Durga, E-mail: sspdb@iacs.res.in

    2017-07-15

    Highlights: • Comparative study on Al, Al-Sn and Al-F doped ZnO films has been carried out. • High transparent Al-F co-doped film shows three times enhanced carrier density. • Al-F co-doped film shows larger carrier relaxation time. • Al-Sn co-doped films shows carrier transport dominated by impurity scattering. • Al-F co-doped ZnO film can be applied as transparent electrode. - Abstract: Herein, we report a comparative mechanistic study on cation-cation (Al-Sn) and cation-anion (Al-F) co-doped nanocrystalline ZnO thin films grown on glass substrate by RF sputtering technique. Through detailed analyses of crystal structure, surface morphology, microstructure, UV-VIS-NIR transmission-reflection and electrical transport property, the inherent characteristics of the co-doped films were revealed and compared. All the nanocrystalline films retain the hexagonal wurtzite structure of ZnO and show transparency above 90% in the visible and NIR region. As opposed to expectation, Al-Sn (ATZO) co-doped film show no enhanced carrier concentration consistent with the probable formation of SnO{sub 2} clusters supported by the X-ray photoelectron spectroscopy study. Most interestingly, it has been found that Al-F (AFZO) co-doped film shows three times enhanced carrier concentration as compared to Al doped and Al-Sn co-doped films attaining a value of ∼9 × 10{sup 20} cm{sup −3} due to the respective cation and anion substitution. The carrier relaxation time increases in AFZO while it decreases significantly for ATZO film consistent with the concurrence of the impurity scattering in the latter.

  4. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al{sub 2}O{sub 3} gate oxides

    Energy Technology Data Exchange (ETDEWEB)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701 (Korea, Republic of)], E-mail: sangsig@korea.ac.kr

    2008-10-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al{sub 2}O{sub 3} tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I{sub DS}-V{sub GS}) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper.

  5. ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al2O3 gate oxides

    International Nuclear Information System (INIS)

    Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon; Jang, Jaewon; Yun, Junggwon; Jeong, Dong-Young; Yoon, Changjoon; Koo, Jamin; Kim, Sangsig

    2008-01-01

    The memory characteristics of ZnO nanowire-based nano-floating gate memory (NFGM) with Pt nanocrystals acting as the floating gate nodes were investigated in this work. Pt nanocrystals were embedded between Al 2 O 3 tunneling and control oxide layers deposited on ZnO nanowire channels. For a representative ZnO nanowire-based NFGM with embedded Pt nanocrystals, a threshold voltage shift of 3.8 V was observed in its drain current versus gate voltage (I DS -V GS ) measurements for a double sweep of the gate voltage, revealing that the deep effective potential wells built into the nanocrystals provide our NFGM with a large charge storage capacity. Details of the charge storage effect observed in this memory device are discussed in this paper

  6. X-ray photoelectron spectroscopy study and thermoelectric properties of Al-doped ZnO thin films

    International Nuclear Information System (INIS)

    Li Li; Fang Liang; Zhou Xianju; Liu Ziyi; Zhao Liang; Jiang Sha

    2009-01-01

    In this paper, high quality Al-doped ZnO (AZO) thin films were prepared by direct current (DC) reactive magnetron sputtering using a Zn target (99.99%) containing Al of 1.5 wt.%. The films obtained were characterized by X-ray photoelectron spectroscopy (XPS) and thermoelectric measurements. The XPS results reveal that Zn and Al exist only in oxidized state, while there are dominant crystal lattice and rare adsorbed oxygen for O in the annealed AZO thin films. The studies of thermoelectric property show a striking thermoelectric effect in the AZO thin films. On the one hand, the thermoelectromotive and magnetothermoelectromotive forces increase linearly with increasing temperature difference (ΔT). On the other hand, the thermoelectric power (TEP) decreases with the electrical resistance of the sample. But the TEP increases with the increase of temperature below 300 K, and it nearly does not change around room temperature. The experimental results also demonstrate that the annealing treatment increases TEP, while the external magnetic field degrades TEP.

  7. Raman scattering and band-gap variations of Al-doped ZnO nanoparticles synthesized by a chemical colloid process

    International Nuclear Information System (INIS)

    Lo, Shih-Shou; Huang, Dison; Tu, Chun Hsiang; Hou, Chia-Hung; Chen, Chii-Chang

    2009-01-01

    This study synthesizes Al-doped ZnO (AZO) nanoparticles using a chemical colloid process. Raman scattering analysis shows that Al doping increases the lattice defects and induces Raman vibration modes of 651 cm -1 . The Raman shift of the active mode E 2 (high) of AZO nanoparticles shows the presence and increase in the stress in nanoparticles when the Al dopant concentration increases. Room-temperature photoluminescence (RT-PL) spectra of synthesized AZO nanoparticles exhibit strong UV emissions near the band edges. The RT-PL peak shifts to a higher photon energy region as the Al concentration increases, indicating a broadening of the band gap.

  8. Pure and Al-doped ZnO obtained by the modified Pechini method applied in ethanolic transesterification of cottonseed oil

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, M.F.; Silva-Neta, A.R.; Farias, A.F.F.; Souza, A.G.; Fonseca, M.G.; Pontes, L.F.B.L.; Santos, I.M.G., E-mail: ieda.garcia@pq.cnpq.br [Universidade Federal da Paraiba (LACOM/UFPB), Joao Pessoa, PB (Brazil). Dept. de Quimica

    2017-01-15

    Pure zinc oxide (ZnO) and 5% Al-doped ZnO (ZNAL) were synthesized using the modified Pechini method and characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), Raman spectroscopy, infrared spectroscopy and UV-visible spectroscopy. XRF confirmed the theoretical stoichiometry, while XRD and Raman spectroscopy indicated that Al{sup 3+} was incorporated into the ZnO wurtzite lattice with no secondary phases, leading to a decrease in the band gap value and to a meaningful increase of the Lewis basic sites. Pure and doped ZnO were used as catalysts in the ethylic transesterification of cottonseed oil using a factorial design to determine the best synthesis conditions. Oil conversion into biodiesel was evaluated by viscosity measurements and {sup 1}H NMR spectroscopy. The results analyzed by factorial design indicated that the catalyst type and temperature were the determinant factors in the conversion indices. The highest basicity of the ZNAL lead to a significant increase of the catalytic potential, reaching a reduction of the oil viscosity next to 71% at 130 °C and greater than 85% at 200 °C. (author)

  9. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Tabassum, Samia, E-mail: shawon14@gmail.com; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

    2016-07-30

    Highlights: • Al-doped ZnO thin film was deposited by sol-gel method in different annealing temperature and duration. • We examined the environmental stability in ambient and damp heat condition. • We investigated chemical state of thin film. • Better stability was observed in the film annealed at high temperature (600 °C) along with longer duration (120 min). • An ultrathin aluminum oxide layer formation was predicted by XPS measurement which protects further oxidation and improves stability. - Abstract: Al-doped zinc oxide (AZO) thin films have been considered as a promising alternative to tin doped indium oxide (ITO), which is currently used in various optoelectronic applications. However, the environmental stability of AZO film is not satisfactory, in that the resistivity is significantly increases in air. Here, we investigate the resistivity stability of AZO thin films prepared by sol-gel method using various annealing temperatures and durations. The degradation of resistivity property was observed for AZO films stored in ambient or damp heat environment, where the degradation rate was influenced by annealing temperature. A significant improvement of electrical stability was attained in AZO films that were prepared at high annealing temperature. The films, which showed the highest and the lowest increasing rate of resistivity, were further characterized in detail to shed light on the possible mechanisms explaining the improved stability through crystallinity, surface morphology and elemental state of the thin film.

  10. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method

    International Nuclear Information System (INIS)

    Tabassum, Samia; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

    2016-01-01

    Highlights: • Al-doped ZnO thin film was deposited by sol-gel method in different annealing temperature and duration. • We examined the environmental stability in ambient and damp heat condition. • We investigated chemical state of thin film. • Better stability was observed in the film annealed at high temperature (600 °C) along with longer duration (120 min). • An ultrathin aluminum oxide layer formation was predicted by XPS measurement which protects further oxidation and improves stability. - Abstract: Al-doped zinc oxide (AZO) thin films have been considered as a promising alternative to tin doped indium oxide (ITO), which is currently used in various optoelectronic applications. However, the environmental stability of AZO film is not satisfactory, in that the resistivity is significantly increases in air. Here, we investigate the resistivity stability of AZO thin films prepared by sol-gel method using various annealing temperatures and durations. The degradation of resistivity property was observed for AZO films stored in ambient or damp heat environment, where the degradation rate was influenced by annealing temperature. A significant improvement of electrical stability was attained in AZO films that were prepared at high annealing temperature. The films, which showed the highest and the lowest increasing rate of resistivity, were further characterized in detail to shed light on the possible mechanisms explaining the improved stability through crystallinity, surface morphology and elemental state of the thin film.

  11. Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

    Directory of Open Access Journals (Sweden)

    Seong Min Kim

    2012-12-01

    Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

  12. Study on the enhanced and stable field emission behavior of a novel electrosprayed Al-doped ZnO bilayer film

    KAUST Repository

    Mahmood, Khalid; Munir, Rahim; Swain, Bhabani Sankar; Han, Gill Sang; Kim, Byeong Jo; Jung, Hyun Suk

    2014-01-01

    A novel electrosprayed bilayer film composed of an over-layer (L 2) of aluminium-doped ZnO (AZO) nanoflakes (NF-AZO) and a under-layer (L1) of AZO nanocrystallites structure (NC-AZO) named BL:NF/NC-AZO is studied as an excellent field-emitter. The XRD pattern demonstrated that the doped bilayer film has preferential growth along the c-axis with hexagonal wurtzite structure and the (0 0 2) peak shifted toward the larger angle side after doping. The lowest turn-on field of ∼2.8 V μm-1, highest emission current density of 1.95 mA cm-2 is obtained for BL:NF/NC-AZO under the field of 6.8 V μm-1 and as well as the highest field enhancement factor (β) is estimated to be 4370 ± 3, compared to pure ZnO bilayer film (BL:NF/NC-ZnO) and also better than NC-AZO film and possesses the excellent long term stability of emission current. The PL intensity of doped ZnO bilayer film is very much stronger than pure ZnO bilayer structure. The superior field emission properties are attributed to the better morphologies, Al-doping and better crystallinity of bilayer AZO films. © 2014 The Royal Society of Chemistry.

  13. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  14. Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Evtodiev, I. [Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of); Caraman, I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Leontie, L., E-mail: lleontie@uaic.ro [Alexandru Ioan Cuza University of Iasi, Bd. Carol I, Nr. 11, RO 700506 Iasi (Romania); Rusu, D.-I. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania); Dafinei, A. [Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania); Nedeff, V.; Lazar, G. [Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

  15. Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

    Science.gov (United States)

    Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

    2015-12-09

    Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

  16. Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

    KAUST Repository

    Maller, Robert

    2016-05-24

    The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

  17. Achieving high mobility ZnO : Al at very high growth rates by dc filtered cathodic arc deposition

    International Nuclear Information System (INIS)

    Mendelsberg, R J; Lim, S H N; Wallig, J; Anders, A; Zhu, Y K; Milliron, D J

    2011-01-01

    Achieving a high growth rate is paramount for making large-area transparent conducting oxide coatings at a low cost. Unfortunately, the quality of thin films grown by most techniques degrades as the growth rate increases. Filtered dc cathodic arc is a lesser known technique which produces a stream of highly ionized plasma, in stark contrast to the neutral atoms produced by standard sputter sources. Ions bring a large amount of potential energy to the growing surface which is in the form of heat, not momentum. By minimizing the distance from cathode to substrate, the high ion flux gives a very high effective growth temperature near the film surface without causing damage from bombardment. The high surface temperature is a direct consequence of the high growth rate and allows for high-quality crystal growth. Using this technique, 500-1300 nm thick and highly transparent ZnO : Al films were grown on glass at rates exceeding 250 nm min -1 while maintaining resistivity below 5 x 10 -4 Ω cm with electron mobility as high as 60 cm 2 V -1 s -1 . (fast track communication)

  18. Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

    KAUST Repository

    Maller, Robert; Porte, Yoann; Alshareef, Husam N.; McLachlan, Martyn

    2016-01-01

    The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

  19. Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Sin-Liang Ou

    2016-01-01

    Full Text Available The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value of R/r is introduced. Here, r is the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position of R/r is fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA at 600°C with N2 atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.

  20. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing

    International Nuclear Information System (INIS)

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-01-01

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10 −2 Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. (papers)

  1. Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yan, T.; Lu, C.-Y.J.; Schuber, R.; Chang, L.; Schaadt, D.M.; Chou, M.M.C.; Ploog, K.H.; Chiang, C.-M.

    2015-01-01

    Highlights: • ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by MBE. • A high Zn/O flux ratio is beneficial for reducing the density of screw dislocations. • Reciprocal space maps demonstrate that the misfit strain in ZnO has been relaxed. • No interfacial layer is formed at ZnO/GaN interface using a Zn pre-exposure strategy. - Abstract: C-plane ZnO epilayers were grown on LiAlO 2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy. Both the X-ray rocking curves and the transmission electron microscopy analyses indicate that the ZnO epilayers exhibit a lower threading dislocation density (∼1 × 10 10 cm −2 ) as compared to those grown on LiAlO 2 substrate without the buffer layer. A high Zn/O flux ratio is beneficial for reducing the density of screw-type dislocations. Reciprocal space maps demonstrate that the misfit strain has been relaxed. No interfacial layer is formed at the ZnO/GaN interface by using a Zn pre-exposure strategy. The ZnO epilayers exhibit a strong near band edge emission at 3.28 eV at room temperature with a negligible green band emission

  2. A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

    Science.gov (United States)

    Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

    2013-01-01

    The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

  3. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

    International Nuclear Information System (INIS)

    Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

    2014-01-01

    Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

  4. Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

    Science.gov (United States)

    Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

    2018-03-01

    Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

  5. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  6. Pressurized polyol synthesis of Al-doped ZnO nanoclusters with high electrical conductivity and low near-infrared transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ho-Nyun; Shin, Chi-Ho [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of); Hwang, Duck Kun [Department of Corporate Diagnosis, Small and Medium Business Corporation, Seoul 150-718 (Korea, Republic of); Kim, Haekyoung [School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Oh, Kyeongseok [Department of Chemical and Environmental Technology, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Hyun-Jong, E-mail: hjkim23@kitech.re.kr [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of)

    2015-09-25

    Highlights: • Low-temperature pressurized polyol method synthesized Al-doped ZnO nanoclusters. • Reaction time affected the doping efficiency, resistivity, and NIR transmittance. • The near-IR blocking efficiency of Al-doped ZnO (AZO) nanoclusters reached 85%. • AZO nanocluster coatings could be used for heat reflectors or artificial glasses. - Abstract: In this study, a novel pressurized polyol method is proposed to synthesize aluminum-doped ZnO (AZO) nanoclusters without utilizing additional thermal treatment to avoid the merging of nanoclusters. The size of the AZO nanoclusters range from 100 to 150 nm with a resistivity of 204 Ω cm. The AZO nanoclusters primarily consist of approximately 10-nm nanocrystals that form a spherically clustered morphology. A two-stage growth model has been proposed based on the results of scanning electron microscopy and transmission electron microscopy images, nanocluster sizes, and X-ray diffraction patterns. The primary AZO nanocrystals first nucleate under pressurized conditions and then spontaneously aggregate into larger nanoclusters. Optically, the AZO nanoclusters exhibit a significant decrease in the near-infrared (NIR) transmittance compared to pure ZnO nanoparticles. The NIR blocking efficiency of AZO nanoclusters reached 85%. Moreover, the doping efficiency, resistivity, and NIR transmittance of AZO nanoclusters are influenced by the reaction time in the pressurized polyol solution. On the other hand, the reaction time has no effect on the particle size and crystallinity. An optically transparent coating for the AZO nanoclusters, which consisted of iso-propanol solvent and ultraviolet-curable acrylic binder, was also demonstrated.

  7. High-energy electron beam irradiation of Al-doped ZnO thin films deposited at room temperature

    International Nuclear Information System (INIS)

    Yun, Eui-Jung; Jung, Jin-Woo; Hwang, Jong-Ha; Lee, Byung-Cheol; Jung, Myung-Hee

    2011-01-01

    In this research, we demonstrated the effects of high-energy electron beam irradiation (HEEBI) on the optical and structural properties of Al-doped ZnO (AZO) films grown on transparent corning glass substrates at room temperature (RT) by using a radio-frequency magnetron sputtering technique. The AZO thin films were treated with HEEBI in air at RT at an electron beam energy of 0.8 MeV and doses of 1 x 10 14 - 1 x 10 16 electrons/cm 2 . The photoluminescence (PL) measurements revealed that the dominant peak at 2.77 eV was a blue emission originating from donor-like defects, oxygen vacancies (V o ), suggesting that the n-type conductivity was preserved in HEEBI-treated films. On the basis of PL, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy results, we suggest that the density of V o donor defects is decreased due to in-diffusion of oxygen from the ambient into the films after HEEBI treatment at low doses up to 10 15 electrons/cm 2 while the opposite phenomenon can occur with further increase in the dose. We also found from the XRD analysis that the worse crystallinity with a smaller grain size was observed in HEEBI-treated AZO films at a higher dose, corresponding to a higher oxygen fraction in the films. We believe that our results will contribute to developing high-quality AZO-based materials and devices for space applications.

  8. Effect of electron irradiation on gas sensing properties of Al-Zno

    Directory of Open Access Journals (Sweden)

    Sunil C. Vattappalam

    2015-12-01

    Full Text Available Al–ZnO thin films are prepared by Silar method and are annealed at 450°C for 1 h. A selected number of samples are irradiated by high-energy electron beam and all are characterized by XRD, SEM and energy-dispersive X-ray spectroscopy. Both irradiated and non-irradiated samples are then placed independently inside a gas chamber kept at rotary vacuum. The gas chamber is maintained at a pressure of 0.20 mb and at a temperature of 350°C. Ethanol vapour is admitted in a controlled manner into the chamber and the resistance of the film is measured continuously before, during and after the admittance of the ethanol vapour. The experiment is repeated for different dosages of irradiation and different doping concentrations of Al and the resistance of the film getting reduced fast and considerably at the admittance of ethanol has been observed. The response and recovery time of the irradiated samples is compared with that of non-irradiated samples of the same doping concentration. It has been noted that both irradiated and non-irradiated samples show a response time of 1 s and recovery time of the irradiated samples is shorter than that of non-irradiated samples.

  9. Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

    Science.gov (United States)

    Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

    2015-05-01

    Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

  10. Effect of Al dopants on the structural, optical and gas sensing properties of spray-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prajapati, C.S. [Department of Physics, Motilal Nehru National Institute of Technology, Allahabad 211 004 (India); Kushwaha, Ajay [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Sahay, P.P., E-mail: dr_ppsahay@rediffmail.com [Department of Physics, Motilal Nehru National Institute of Technology, Allahabad 211 004 (India)

    2013-10-01

    Undoped and Al-doped ZnO thin films were deposited on glass substrates by the spray pyrolysis method. The structural, morphological and optical properties of these films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–Vis spectroscopy, photoluminescence (PL) and photoconductivity (PC) measurements, respectively. XRD analyses confirm that the films are polycrystalline zinc oxide with the hexagonal wurtzite structure, and the crystallite size has been found to be in the range 20–40 nm. SEM and AFM analyses reveal that the films have continuous surface without visible holes or faulty zones, and the surface roughness decreases on Al doping. The Al-doped films have been found to be highly transparent (>85%) and show normal dispersion behavior in the wavelength range 450–700 nm. The doped films show only ultraviolet emission and are found to be highly photosensitive. Among all the films examined, at 300 °C the 1.0 at% Al-doped film shows the selective high response (98.2%) to 100 ppm acetone concentration over to methanol, ethanol, propan-2-ol, formaldehyde and hydrogen. - Highlights: • ZnO films possess hexagonal wurtzite structure with crystallite size: 20–40 nm. • On Al doping, the surface roughness decreases and optical transmission increases. • Al-doped films exhibit the normal dispersion behavior for (450–700 nm) wavelength. • All the films are photosensitive and the photocurrent enhances on Al doping. • 1 at% Al-doped films exhibit high sensitivity and selectivity to acetone at 300 °C.

  11. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Linjie; Wang, Lixin [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Qin, Xiujuan, E-mail: qinxj@ysu.edu.cn [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Cui, Li [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Shao, Guangjie [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2016-04-30

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  12. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, Linjie; Wang, Lixin; Qin, Xiujuan; Cui, Li; Shao, Guangjie

    2016-01-01

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  13. The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2017-02-01

    Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

  14. Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots-SiO(2) composite/p-AlGaN heterojunction light-emitting diodes.

    Science.gov (United States)

    Shih, Ying Tsang; Wu, Mong Kai; Li, Wei Chih; Kuan, Hon; Yang, Jer Ren; Shiojiri, Makoto; Chen, Miin Jang

    2009-04-22

    This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at lambda~380 nm in the n-ZnO/ZnO nanodots-SiO(2) composite/p- Al(0.12)Ga(0.88)N heterojunction light-emitting diode. A SiO(2) layer embedded with ZnO nanodots was prepared on the p-type Al(0.12)Ga(0.88)N using spin-on coating of SiO(2) nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO(2) composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO(2) matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO(2) composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated emission. The low refractive index of the ZnO nanodots-SiO(2) composite layer results in the increase in the light extraction efficiency from n-ZnO and the internal optical feedback of UV EL into n-ZnO layer. Consequently, significant enhancement of the UV EL intensity and super-linear increase in the EL intensity, as well as the spectral narrowing, with injection current were observed owing to ASE in the n-ZnO layer.

  15. Controlled Al3+ Incorporation in the ZnO Lattice at 188 °C by Soft Reactive Co-Sputtering for Transparent Conductive Oxides

    Directory of Open Access Journals (Sweden)

    Salvatore Sanzaro

    2016-06-01

    Full Text Available Transparent conductive oxide (TCO layers, to be implemented in photo-anodes for dye-sensitized solar cells (DSCs, were prepared by co-deposition of ZnO and Al using pulsed-direct current (DC-magnetron reactive sputtering processes. The films were deposited at low deposition temperatures (RT-188 °C and at fixed working pressure (1.4 Pa using soft power loading conditions to avoid intrinsic extra-heating. To compensate the layer stoichiometry, O2 was selectively injected close to the sample in a small percentage (Ar:O2 = 69 sccm:2 sccm. We expressly applied the deposition temperature as a controlling parameter to tune the incorporation of the Al3+ species in the targeted position inside the ZnO lattice. With this method, Aluminum-doped Zinc Oxide films (ZnO:Al were grown following the typical wurtzite structure, as demonstrated by X-ray Diffraction analyses. A combination of micro-Raman, X-ray photoelectron spectroscopy (XPS and spectroscopic ellipsometry (SE analyses has shown that the incorporated host-atoms are Al3+ species in Zn2+ substitutional position; their amount increases following a direct monotonic trend with the deposition temperature. Correspondently, the c-axis strain into the layer decreases due to the progressive ordering of the lattice structure and reducing clustering phenomena. The maximum average Al content inside the film was ~2%, as measured by energy dispersive X-ray (EDX spectroscopy, with a uniform distribution of the dopant species along the layer thickness traced by depth-profile XPS analyses. The optimised ZnO:Al layer, deposited at a rate of ~7 nm/min, exhibits high transmittance in the visible range (~85% and low resistivity values (~13 mΩ × cm. The material therefore fulfils all the requirements to be candidate as TCO for low-cost DSCs on flexible substrates for large area technologies.

  16. Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Elshaer, A.; Waag, A. [Inst. of Semiconductor Technology, Technical Univ. Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Inst. of Applied Physics, Technical Univ. Braunschweig (Germany); Bertram, F.; Christen, J. [Dept. of Solid State Physics, Univ. of Magdeburg (Germany)

    2006-03-15

    ZnO nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Fabrication methods, especially for nanorods have been based mostly on catalyst-assisted growth methods that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on the growth of ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3} using purely elemental sources, without catalysis and at relatively low temperatures and growth pressure in a specially designed vapor-phase transport system. ZnO nanorods with widths of 80-900 nm and lengths of 4-12 {mu}m were obtained. Nanorod concentrations of up to 10{sup 9} cm{sup -2} with homogenous luminescence and high purity were noted. (orig.)

  17. Insight about electrical properties of low-temperature solution-processed Al-doped ZnO nanoparticle based layers for TFT applications

    Energy Technology Data Exchange (ETDEWEB)

    Diallo, Abdou Karim; Gaceur, Meriem; Fall, Sadiara; Didane, Yahia; Ben Dkhil, Sadok; Margeat, Olivier, E-mail: margeat@cinam.univ-mrs.fr; Ackermann, Jörg; Videlot-Ackermann, Christine, E-mail: videlot@cinam.univ-mrs.fr

    2016-12-15

    Highlights: • Al-doped ZnO (AZO) nanoparticles. • Impact of dispersion state and solid state on electrical properties. • Extrinsic doping with Al for high conducting AZO nanoparticle based layers. • Low-temperature operating nanoparticulate AZO TFTs. - Abstract: Aluminium-doped zinc oxide nanoparticles (NPs) with controlled Al doping contents (AZO{sub x} with x = 0–0.8 at% of Al) were explored as new oxide semiconductor materials to study the impact of doping on both solution and solid states. Polycrystalline AZO{sub x} thin films were produced by spin-coating the dispersions following by a thermal post-treatment at low-temperature (80 °C or 150 °C). The coated AZO{sub x} films were employed as active layer in thin-film transistors. Morphology and microstructure were studied by scanning electron microscopy and X-ray diffraction. The impact on the device performances (mobility, conductivity, charge carrier density) of Al-doping content together with the solution state was examined. Spin-coated films delivered an electron mobility up to 3 × 10{sup −2} cm{sup 2}/Vs for the highest Al-doping ratio AZO{sub 0.8}. Despite highly different morphologies, extrinsic doping with aluminium significantly increases the conductivity of low temperature solution-processed AZO{sub x} NPs series based layers by several orders of magnitude from AZO{sub 0} to AZO{sub 0.8}.

  18. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al2O3 on Li ion battery electrodes

    International Nuclear Information System (INIS)

    Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia; George, Steven M.

    2016-01-01

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li 0.20 Mn 0.54 Ni 0.13 Co 0.13 O 2 electrodes on flexible metal foil were coated with Al 2 O 3 using 2–5 Al 2 O 3 ALD cycles. The Al 2 O 3 ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al 2 O 3 S-ALD coating on the electrodes enhanced the capacity stability. This S-ALD process could be extended to roll-to-roll operation for

  19. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  20. Effect of Al-doped on physical properties of ZnO Thin films grown by spray pyrolysis on SnO2: F/glass

    Directory of Open Access Journals (Sweden)

    Castagné M.

    2012-06-01

    Full Text Available Transparent conducting thin films of aluminum-doped zinc oxide (ZnO:Al have been deposited on SnO2:F/glass by the chemical spray technique, starting from zinc acetate (CH3CO22Zn.2H2O and aluminum chloride AlCl3. The effect of changing the aluminum-to-zinc ratio y from 0 to 3 at.%, has been thoroughly investigated. It was found that the optical and electrical properties of Al doped ZnO films improved with the addition of aluminum in the spray solution until y=2%. At this Al doping percentage, the thin layers have a resistivity equal to 4.1 × 10−4 Ω.cm and a transmittance of about 90 % in the region [600-1000] nm. XRD patterns confirm that the films have polycristalline nature and a wurtzite (hexagonal structure which characterized with (100, (002 and (101 principal orientations. The undoped films have (002 as the preferred orientation but Al doped ones have (101 as the preferred orientation. Beyond y= 1%, peak intensities decrease considerably.

  1. Mass production and photoelectric performances of P and Al Co-doped ZnO nanocrystals under different cooling post-processes

    International Nuclear Information System (INIS)

    Deng, Ya-Juan; Lu, Yi; Liu, Jin-Ku; Yang, Xiao-Hong

    2015-01-01

    The phosphorus and aluminum co-doped in zinc oxide (ZnO) called PAZO nano-crystals (NCs) have been mass synthesized by a combustion method, which shows a preferable photocatalytic capability and conductive ability. This article focuses on the properties of PAZO NCs experienced by three cooling-down aftertreatments, which were the normalizing, quenching and annealing process, respectively. The influences of different cooling processes on the photocatalytic and conductive performances are discussed in details. From the research, we found the quenched-PAZO NCs showed the most unappealing photocatalysis and conductivity, because excessive defects as the recombination center of electron–hole pairs were generated in the quenching process. - Graphical abstract: This research focuses on the PAZO NCs experienced by different cooling-down aftertreatments, which were the normalizing, quenching and annealing process, respectively. The quenched-PAZO NCs had the most unappealing photocatalysis and conductivity, because of generating excessive defects as the recombination center of electron–hole pairs in the quenching process. - Highlights: • We presented a method to mass synthesize co-doped P and Al in ZnO nanocrystals. • The PAZO NCs have novel photoelectric performances. • The cooling post-process influence on the photoelectric properties was studied. • The excessive defects decline the photocatalytic and conductive activities

  2. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-10-05

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  3. Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

    International Nuclear Information System (INIS)

    Dewald, Wilma; Sittinger, Volker; Szyszka, Bernd; Säuberlich, Frank; Stannowski, Bernd; Köhl, Dominik; Ries, Patrick; Wuttig, Matthias

    2013-01-01

    Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al 2 O 3 target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm 2 /Vs and electron density of 4.3 · 10 20 cm −3 from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm 2 /Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current

  4. Advanced properties of Al-doped ZnO films with a seed layer approach for industrial thin film photovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Dewald, Wilma, E-mail: wilma.dewald@ist.fraunhofer.de [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Sittinger, Volker; Szyszka, Bernd [Fraunhofer Institute for Surface Engineering and Thin Films IST, Bienroder Weg 54E, 38108 Braunschweig (Germany); Säuberlich, Frank; Stannowski, Bernd [Sontor GmbH, OT Thalheim, Sonnenallee 7-11, 06766 Bitterfeld-Wolfen (Germany); Köhl, Dominik; Ries, Patrick; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, Sommerfeldstraße 14, 52074 Aachen (Germany)

    2013-05-01

    Currently sputtered Al-doped ZnO films are transferred to industry for the application in thin film silicon solar modules. These films are known to easily form light trapping structures upon etching which are necessary for absorbers with low absorbance such as μc-Si. Up to now the best structures for high efficiency thin film silicon solar cells were obtained by low rate radio frequency (r.f.) sputtering of ceramic targets. However, for industrial application a high rate process is essential. Therefore a seed layer approach was developed to increase the deposition rate while keeping the desired etch morphology and electrical properties. Aluminum doped ZnO films were deposited dynamically by direct current (d.c.) magnetron sputtering from a ceramic ZnO:Al{sub 2}O{sub 3} target (1 wt.%) onto an additional seed layer prepared by r.f. sputtering. ZnO:Al films were investigated with respect to their optical and electrical properties as well as the morphology created after etching for a-Si/μc-Si solar cells. Additionally atomic force microscopy, scanning electron microscopy, X-ray diffraction and Hall measurements were performed, comparing purely r.f. or d.c. sputtered films with d.c. sputtered films on seed layers. With the seed layer approach it was possible to deposit ZnO:Al films with a visual transmittance of 83.5%, resistivity of 295 μΩ cm, electron mobility of 48.9 cm{sup 2}/Vs and electron density of 4.3 · 10{sup 20} cm{sup −3} from a ceramic target at 330 °C. Etch morphologies with 1 μm lateral structure size were achieved. - Highlights: ► Seed layer approach for dynamic sputter deposition of enhanced quality ZnO:Al. ► A thin radio frequency sputtered ZnO:Al layer assists film nucleation on glass. ► Electron mobility was increased up to 49 cm{sup 2}/Vs due to quasi-epitaxial film growth. ► Etch morphology exhibits 1 μm wide craters for light trapping in solar cells. ► The concept was transferred to a seed layer sputtered with direct current.

  5. ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

    KAUST Repository

    Bera, Ashok

    2015-12-28

    Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. ZnO Nanorods on a LaAlO 3 -SrTiO 3 Interface: Hybrid 1D-2D Diodes with Engineered Electronic Properties

    KAUST Repository

    Bera, Ashok; Lin, Weinan; Yao, Yingbang; Ding, Junfeng; Lourembam, James; Wu, Tao

    2015-01-01

    Integrating nanomaterials with different dimensionalities and properties is a versatile approach toward realizing new functionalities in advanced devices. Here, a novel diode-type heterostructure is reported consisting of 1D semiconducting ZnO nanorods and 2D metallic LaAlO3-SrTiO3 interface. Tunable insulator-to-metal transitions, absent in the individual components, are observed as a result of the competing temperature-dependent conduction mechanisms. Detailed transport analysis reveals direct tunneling at low bias, Fowler-Nordheim tunneling at high forward bias, and Zener breakdown at high reverse bias. Our results highlight the rich electronic properties of such artificial diodes with hybrid dimensionalities, and the design principle may be generalized to other nanomaterials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3 passivation layer

    Science.gov (United States)

    Chen, Hong-Yan; Lu, Hong-Liang; Sun, Long; Ren, Qing-Hua; Zhang, Hao; Ji, Xin-Ming; Liu, Wen-Jun; Ding, Shi-Jin; Yang, Xiao-Feng; Zhang, David Wei

    2016-01-01

    Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3 spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3 layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+ -type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3 film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400–900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells. PMID:27924911

  8. Hazy Al2O3-FTO Nanocomposites: A Comparative Study with FTO-Based Nanocomposites Integrating ZnO and S:TiO2 Nanostructures

    Directory of Open Access Journals (Sweden)

    Shan-Ting Zhang

    2018-06-01

    Full Text Available In this study, we report the use of Al2O3 nanoparticles in combination with fluorine doped tin oxide (F:SnO2, aka FTO thin films to form hazy Al2O3-FTO nanocomposites. In comparison to previously reported FTO-based nanocomposites integrating ZnO and sulfur doped TiO2 (S:TiO2 nanoparticles (i.e., ZnO-FTO and S:TiO2-FTO nanocomposites, the newly developed Al2O3-FTO nanocomposites show medium haze factor HT of about 30%, while they exhibit the least loss in total transmittance Ttot. In addition, Al2O3-FTO nanocomposites present a low fraction of large-sized nanoparticle agglomerates with equivalent radius req > 1 μm; effectively 90% of the nanoparticle agglomerates show req < 750 nm. The smaller feature size in Al2O3-FTO nanocomposites, as compared to ZnO-FTO and S:TiO2-FTO nanocomposites, makes them more suitable for applications that are sensitive to roughness and large-sized features. With the help of a simple optical model developed in this work, we have simulated the optical scattering by a single nanoparticle agglomerate characterized by bottom radius r0, top radius r1, and height h. It is found that r0 is the main factor affecting the HT(λ, which indicates that the haze factor of Al2O3-FTO and related FTO nanocomposites is mainly determined by the total surface coverage of all the nanoparticle agglomerates present.

  9. Piezoelectric-Induced Triboelectric Hybrid Nanogenerators Based on the ZnO Nanowire Layer Decorated on the Au/polydimethylsiloxane-Al Structure for Enhanced Triboelectric Performance.

    Science.gov (United States)

    Jirayupat, Chaiyanut; Wongwiriyapan, Winadda; Kasamechonchung, Panita; Wutikhun, Tuksadon; Tantisantisom, Kittipong; Rayanasukha, Yossawat; Jiemsakul, Thanakorn; Tansarawiput, Chookiat; Liangruksa, Monrudee; Khanchaitit, Paisan; Horprathum, Mati; Porntheeraphat, Supanit; Klamchuen, Annop

    2018-02-21

    Here, we demonstrate a novel device structure design to enhance the electrical conversion output of a triboelectric device through the piezoelectric effect called as the piezo-induced triboelectric (PIT) device. By utilizing the piezopotential of ZnO nanowires embedded into the polydimethylsiloxane (PDMS) layer attached on the top electrode of the conventional triboelectric device (Au/PDMS-Al), the PIT device exhibits an output power density of 50 μW/cm 2 , which is larger than that of the conventional triboelectric device by up to 100 folds under the external applied force of 8.5 N. We found that the effect of the external piezopotential on the top Au electrode of the triboelectric device not only enhances the electron transfer from the Al electrode to PDMS but also boosts the internal built-in potential of the triboelectric device through an external electric field of the piezoelectric layer. Furthermore, 100 light-emitting diodes (LEDs) could be lighted up via the PIT device, whereas the conventional device could illuminate less than 20 LED bulbs. Thus, our results highlight that the enhancement of the triboelectric output can be achieved by using a PIT device structure, which enables us to develop hybrid nanogenerators for various self-power electronics such as wearable and mobile devices.

  10. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Joon-Ho [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Kyoung-Kook [Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi 429-793 (Korea, Republic of); Seong, Tae-Yeon, E-mail: tyseong@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2011-01-15

    Al-doped ZnO (AZO, ZnO:Al{sub 2}O{sub 3} = 98:2 wt%) films are deposited on different substrates by an RF magnetron sputtering and subsequently annealed at three different conditions to investigate the microstructural, electrical, and optical properties. X-ray diffraction and scanning electron microscope results show that all the samples are polycrystalline and the samples rapid-thermal-annealed at 900 deg. C in an N{sub 2} ambient contain larger grains compared to the furnace-annealed samples. It is shown that the sample deposited at room temperature on the sapphire gives a resistivity of 5.57 x 10{sup -4} {Omega} cm when furnace-annealed at 500 deg. C in a mixture of N{sub 2}:H{sub 2} (9:1). It is also shown that the Hall mobility vs. carrier concentration ({mu}-n) relation is divided into two groups, depending on the annealing conditions, namely, either rapid-thermal annealing or furnace annealing. The relations are described in terms of either grain boundary scattering or ionized impurity scattering mechanism. In addition, the samples produce fairly high transmittance of 91-96.99% across the wavelength region of 400-1100 nm. The optical bandgaps of the samples increase with increasing carrier concentration.

  11. Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al2O3, doped ZnO, and In2O3:Mo

    International Nuclear Information System (INIS)

    Delahoy, A.E.; Guo, S.Y.; Paduraru, C.; Belkind, A.

    2004-01-01

    A method for thin-film deposition has been studied. The method is based on metal sputtering in a hollow cathode configuration with supply of a reactive gas in the vicinity of the substrate. The working gas and entrained sputtered atoms exit the cathode through an elongated slot. The reactive gas is thereby largely prevented from reaching the target. The basic operation of the cathode was studied using a Cu target and pulsed power excitation. These studies included the dependence of deposition rate on power, pressure, and flow rate, film thickness profiles, and film resistivity as a function of substrate conditions. Modeling was conducted to calculate the gas velocity distribution and pressure inside the cavity. Al 2 O 3 films were prepared in a reactive environment of oxygen by sputtering an Al target. It was demonstrated that only a very small amount of oxygen passing through the cathode will oxidize (poison) the target, whereas large quantities of oxygen supplied externally to the cathode need not affect the target at all. A very stable discharge and ease of Al 2 O 3 formation were realized in this latter mode. The method was applied to the preparation of transparent, conductive films of ZnO doped with either Al or B. High deposition rates were achieved, and, at appropriate oxygen flow rates, low film resistivities. High-mobility In 2 O 3 :Mo transparent conductors were also prepared, with resistivities as low as 1.9x10 -4 Ω cm. Scaling relations for hollow cathodes, and deposition efficiency, and process comparisons between magnetron sputtering and linear, reactive-environment, hollow cathode sputtering are presented

  12. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    International Nuclear Information System (INIS)

    Park, Yong Seob; Kim, Han-Ki

    2011-01-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I D -V D ), drain current-gate voltage (I D -V G ), threshold voltage (V T ), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10 -3 Ω.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm 2 /V s and the on/off ratio of ∼ 10 5 . Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  13. Optimized structure stability and electrochemical performance of LiNi0.8Co0.15Al0.05O2 by sputtering nanoscale ZnO film

    Science.gov (United States)

    Lai, Yan-Qing; Xu, Ming; Zhang, Zhi-An; Gao, Chun-Hui; Wang, Peng; Yu, Zi-Yang

    2016-03-01

    LiNi0.8Co0.15Al0.05O2 (NCA) is one of the most promising cathode material for lithium-ion batteries (LIBs) in electric vehicles, which is successfully adopted in Tesla. However, the dissolution of the cation into the electrolyte is still a one of the major challenges (fading capacity and poor cyclability, etc.) presented in pristine NCA. Herein, a homogeneous nanoscale ZnO film is directly sputtered on the surface of NCA electrode via the magnetron sputtering (MS). This ZnO film is evidenced by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results clearly demonstrate that ZnO film is fully and uniformly covered on the NCA electrodes. After 90 cycles at 1.0C, the optimized MS-2min coated NCA electrode delivers much higher discharge capacity with 169 mAh g-1 than that of the pristine NCA electrode with 127 mAh g-1. In addition, the discharge capacity also reaches 166 mAh g-1 at 3.0C, as compared to that of 125 mAh g-1 for the pristine electrode. The improved electrochemical performance can be ascribed to the superiority of the MS ZnO film that reduce charge transfer resistance and protect the NCA electrode from cation dissolution.

  14. Role of substrate and annealing temperature on the structure of ZnO and Al{sub x}Zn{sub 1−x}O thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nambala, Fred Joe [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Department of Physics, University of Zambia, PO Box 32379, Great East Road Campus, Lusaka (Zambia); Nel, Jacqueline M.; Machatine, Augusto G.J. [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Mwakikunga, Bonex W. [DST/CSIR National Centre for Nano-Structured Materials, PO Box 395, Pretoria (South Africa); Njoroge, Eric G. [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Maabong, Kelebogile [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa); Physics Department, University of Botswana, Private Bag 0022, Gaborone (Botswana); Das, Arran G.M. [Monash University, Private Bag X60, Roodepoort 1725 (South Africa); Diale, Mmantsae, E-mail: mmantsae.diale@up.ac.za [Department of Physics, University of Pretoria, Private bag X20, Hatfield 0028 (South Africa)

    2016-01-01

    This paper reports on the deposition of pure and 5 at% Al doped ZnO (AZO) prepared by sol–gel and applied to the substrates by spin-coating, and the role of annealing temperature on the crystallinity of these layers. It is found that both ZnO and AZO are largely amorphous when coated on glass compared to n-Si(111), as substrates. On both substrates, X-ray diffraction (XRD) shows that the crystallinity improves as annealing temperature is raised from 200 to 600 °C with better crystallinity on Si substrates. The thickness of the films on substrates was determined as 120 nm by Rutherford backscattering spectroscopy (RBS). Specular ultra-violet visible (UV–vis) gives the direct transition optical band gaps (E{sub g}) for AZO as-deposited films are 2.60 and 3.35 eV while that of 600 °C annealed films are 3.00 and 3.60 eV. The E{sub g} calculated from diffuse reflectance spectroscopy (DRS) UV–vis are more diverse in ZnO- and AZO-Si than the ZnO- and AZO-glass samples, although in both sets the E{sub g} tend to converge after annealing 600 °C. The Raman spectra of samples show multiphonon processes of higher order from the AZO and substrates. It is found that residual stresses are related to E{sub 2} Raman mode.

  15. Synthesis of Tetrahydropyran from Tetrahydrofurfuryl Alcohol over Cu–Zno/Al2O3 under a Gaseous-Phase Condition

    Directory of Open Access Journals (Sweden)

    Fengyuan Zhang

    2018-03-01

    Full Text Available Tetrahydropyran (THP represents an O-containing hetero-cyclic compound that can be used as a promising solvent or monomer for polymer synthesis. In this work, Cu–ZnO/Al2O3 catalysts have been prepared by a facile precipitation–extrusion method and used for the synthesis of THP through gaseous-phase hydrogenolysis of tetrahydrofurfuryl alcohol (THFA. The effect of the molar ratio of Cu/Zn/Al, reaction temperature, and hydrogen pressure was investigated. An 89.4% selectivity of THP was achieved at 270 °C and 1.0 MPa H2. Meanwhile, the optimum molar ratio of Cu/Zn/Al was determined to be 4:1:10. The Cu–ZnO/Al2O3 catalyst exhibited high catalytic activity and stability for 205 h on-stream. A possible reaction mechanism involving several consecutive reactions was proposed: THFA was firstly rearranged to 2-hydroxytetrahydropyran (2-HTHP, followed by the dehydration of 2-HTHP to 3,4-2H-dihydropyran (DHP over acid sites; finally, the DHP was hydrogenated to THP. The synergy of acid sites and metal sites of Cu–ZnO/Al2O3 played an important role during the production of THP.

  16. Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Sahu, D.R.; Lin, S.-Y.; Huang, J.-L.

    2007-01-01

    A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes

  17. New DC conductivity spectra of Zn–Al layered double hydroxide (Zn–Al–NO3–LDH and its calcined product of ZnO phase

    Directory of Open Access Journals (Sweden)

    Abdullah Ahmed Ali Ahmed

    2017-05-01

    Full Text Available Zn–Al–NO3–LDH nanostructure was synthesized via the coprecipitation method at molar ratio Zn2+/Al3+ = 4 and pH = 7. The resultant sample was thermally treated at calcined temperatures of 50, 100, 150, 200, 250 and 300 °C. The layered structure of the Zn–Al–NO3–LDH samples was stable below the calcination temperature 200 °C as shown in powder X-ray diffraction (PXRD patterns of calcined samples. The calcination products showed a collapse of LDH structure and ZnO phase was formed at 200 °C and above. The dielectric spectroscopy of LDH was explained using anomalous low frequency dispersion (ALFD due to the low mobility of LDH carriers. The conductivity spectra of LDH can be theoretically described according to the effective phase within the calcination products of LDH. In the comparison with previously researches, this study presented higher values of DC conductivity for all studied samples.

  18. Growth mechanisms and thickness effect on the properties of Al-doped ZnO thin films grown on polymeric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Koidis, Christos; Logothetidis, Stergios; Kassavetis, Spiridon; Laskarakis, Argiris [Lab for Thin Films-Nanosystems and Nanometrology (LTFN), Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Hastas, Nikolaos A.; Valassiades, Odisseas [Solid State Section, Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2010-07-15

    The properties of Al-doped ZnO (AZO) thin films deposited by pulsed DC magnetron sputtering under various target power on polyethylene terephthalate (PET) substrates have been investigated. In situ and real-time spectroscopic ellipsometry (1.5-6.5 eV) has been employed to study the optical properties of the AZO films as well as the growth mechanisms taking place. With X-ray diffraction technique under grazing-incidence geometry, the structural characteristics profiles of the AZO films have been depicted. Nanoindentation measurements revealed information about the mechanical properties of the films and have been correlated to the conductivity measurements towards growth insights understanding. As results have shown, the increase of target power led to the increase of the carrier density as well as the hardness of the AZO films possibly both ascribed to dislocations induced. The stress during the deposition of AZO film under high target power favoured the island growth which is possibly both connected to the formation of defects as electron traps and dislocations as electron sources. Finally, the increase of AZO film thickness led to the increase of the resistivity possibly due to the enrichment of grain boundaries with defects as electron traps. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Wet chemical etching of Al-doped ZnO film deposited by RF magnetron sputtering method on textured glass substrate for energy application

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Ki Hwan; Nam, Sang Hun; Jung, Won Suk; Lee, Yong Min; Yang, Hee Su; Boo, Jin Hyo [Dept. of Chemistry, Sungkyunkwan University, Suwon (Korea, Republic of)

    2015-03-15

    The etching of glasses in aqueous hydrofluoric acid (HF) solutions is applied in many technological fields. Particularly, the textured transparent conductive oxide materials on the glass substrate etched by HF were used to improve the current density of solar cells. In this study, the textured glass substrate has been etched by solution and the Al-doped ZnO (AZO) thin films have been prepared on this textured glass substrates by RF magnetron sputtering method. After the AZO film deposition, the surface of AZO has been etched by hydrochloric acid with different concentration and etching time. Etched AZO thin films had higher haze ratio and sheet resistance than bare AZO glass. Increases in the root-mean-square surface roughness of AZO films enhanced from 53.78 to 84.46 nm the haze ratio in above 700 nm wavelength. Our process could be applicable in texturing glass and etching AZO surface to fabricate solar cell in industrial scale. We also carried out fabricating an organic solar-cell device. Energy conversion efficiency improvement of 123% was obtained with textured AZO-based solar-cell device compared with that of nontextured solar-cell device.

  20. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  1. Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-04-22

    A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  3. Significant improvement in performances of LiNi0.5Mn1.5O4 through surface modification with high ordered Al-doped ZnO electro-conductive layer

    International Nuclear Information System (INIS)

    Sun, Hongdan; Xia, Bingbo; Liu, Weiwei; Fang, Guoqing; Wu, Jingjing; Wang, Haibo; Zhang, Ruixue; Kaneko, Shingo; Zheng, Junwei; Wang, Hongyu; Li, Decheng

    2015-01-01

    Graphical abstract: Al-doped ZnO (AZO)-coated LiNi 0.5 Mn 1.5 O 4 (LNMO) was prepared by sol–gel method. AZO-coated LNMO electrode shows excellent rate capability and a remarkable improvement in the cyclic performance at a high rate at elevated temperature. - Highlights: • Al-doped ZnO (AZO)-coated LiNi 0.5 Mn 1.5 O 4 (LNMO) was prepared by a traditional sol–gel method. • Al-doped ZnO (AZO) layer grown on the surface of LNMO is high ordered. • At a high rate of 10 C, the discharge capacity of the AZO-coated LNMO electrode can reach 114 mAh g −1 . • Al-doped ZnO (AZO) modification improved cyclic performance of LNMO at high temperatures. - Abstract: Al-doped ZnO (AZO)-coated LiNi 0.5 Mn 1.5 O 4 (LNMO) was prepared by sol–gel method. Transmission electron microscopy (TEM) analysis indicates that AZO layer grown on the surface of LNMO is high ordered. The results of electrochemical performance measurements reveal that the AZO-coated LNMO electrode displays the best rate capability compared with the bare LNMO and ZnO-coated LNMO, even at a high rate of 10 C. The discharge capacity of the AZO-coated LNMO electrode can still reach 114.3 mAh g −1 , about 89% of its discharge capacity at 0.1 C. Moreover, AZO-coated LNMO electrode shows a remarkable improvement in the cyclic performance at a high rate at elevated temperature due to the protective effect of AZO coating layer. The electrode delivers a capacity of 120.3 mAh g −1 with the capacity retention of 95% at 5 C in 50 cycles at 50 °C. The analysis of electrochemical impedance spectra (EIS) indicates that AZO-coated LNMO possesses the lowest charge transfer resistance compared to the bare LNMO and ZnO-coated LNMO, which may be responsible for improved rate capability

  4. Significant improvement in performances of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} through surface modification with high ordered Al-doped ZnO electro-conductive layer

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Hongdan; Xia, Bingbo [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Liu, Weiwei [Changzhou Institute of Energy Storage Materials & Devices, Changzhou 213000 (China); Fang, Guoqing; Wu, Jingjing; Wang, Haibo; Zhang, Ruixue [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Kaneko, Shingo [Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Zheng, Junwei [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China); Wang, Hongyu [Changzhou Institute of Energy Storage Materials & Devices, Changzhou 213000 (China); Li, Decheng, E-mail: lidecheng@suda.edu.cn [College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Key Laboratory of Lithium Ion Battery Materials of Jiangsu Province, Institute of Chemical Power Sources, Soochow University, Suzhou 215006 (China)

    2015-03-15

    Graphical abstract: Al-doped ZnO (AZO)-coated LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} (LNMO) was prepared by sol–gel method. AZO-coated LNMO electrode shows excellent rate capability and a remarkable improvement in the cyclic performance at a high rate at elevated temperature. - Highlights: • Al-doped ZnO (AZO)-coated LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} (LNMO) was prepared by a traditional sol–gel method. • Al-doped ZnO (AZO) layer grown on the surface of LNMO is high ordered. • At a high rate of 10 C, the discharge capacity of the AZO-coated LNMO electrode can reach 114 mAh g{sup −1}. • Al-doped ZnO (AZO) modification improved cyclic performance of LNMO at high temperatures. - Abstract: Al-doped ZnO (AZO)-coated LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} (LNMO) was prepared by sol–gel method. Transmission electron microscopy (TEM) analysis indicates that AZO layer grown on the surface of LNMO is high ordered. The results of electrochemical performance measurements reveal that the AZO-coated LNMO electrode displays the best rate capability compared with the bare LNMO and ZnO-coated LNMO, even at a high rate of 10 C. The discharge capacity of the AZO-coated LNMO electrode can still reach 114.3 mAh g{sup −1}, about 89% of its discharge capacity at 0.1 C. Moreover, AZO-coated LNMO electrode shows a remarkable improvement in the cyclic performance at a high rate at elevated temperature due to the protective effect of AZO coating layer. The electrode delivers a capacity of 120.3 mAh g{sup −1} with the capacity retention of 95% at 5 C in 50 cycles at 50 °C. The analysis of electrochemical impedance spectra (EIS) indicates that AZO-coated LNMO possesses the lowest charge transfer resistance compared to the bare LNMO and ZnO-coated LNMO, which may be responsible for improved rate capability.

  5. Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

    Directory of Open Access Journals (Sweden)

    Takashi Sumiyama

    2017-05-01

    Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

  6. Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Abdeslam DOUAYAR

    2014-05-01

    Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

  7. Temperature dependence of microstructure and strain evolution in strained ZnO films on Al2O3(0001)

    International Nuclear Information System (INIS)

    Kim, In-Woo; Lee, Kyu-Mann

    2008-01-01

    We have studied the temperature dependence of the growth mode and microstructure evolution in highly mismatched sputter-grown ZnO/Al 2 O 3 (0001) heteroepitaxial films. The growth mode was studied by real-time synchrotron x-ray scattering. We find that the growth mode changes from a two-dimensional (2D) layer to a 3D island in the early growth stage with temperature (300-600 deg. C), in sharp contrast to the reported transition from three dimensions to two dimensions in metal-organic vapor phase epitaxy. At around 400 deg. C intermediate 2D platelets nucleate in the early stage, which act as nucleation cores of 3D islands and transform to a misaligned state during further growth. Meanwhile, at high temperature (above 500 deg. C), the spinel structure of ZnAl 2 O 4 grows in the early stage, and it undergoes a transition to wurtzite-ZnO (w-ZnO) with thickness. The spinel formation is presumably driven by high temperature and large incident energy of impacting atoms during sputtering. The results of the strain evolution as functions of temperature and thickness during growth suggest that the surface diffusion is a major factor determining the microstructural properties in the strained ZnO/Al 2 O 3 (0001) heteroepitaxy

  8. The influence of Al2O3, MgO and ZnO on the crystallization characteristics and properties of lithium calcium silicate glasses and glass-ceramics

    International Nuclear Information System (INIS)

    Salman, S.M.; Darwish, H.; Mahdy, E.A.

    2008-01-01

    The crystallization characteristics of glasses based on the Li 2 O-CaO-SiO 2 eutectic (954 ± 4 deg. C) system containing Al 2 O 3 , MgO and ZnO has been investigated by differential thermal analysis (DTA), X-ray diffraction analysis (XRD), and scanning electron microscopy (SEM). The partial replacement of Li 2 O by Al 2 O 3 and CaO by MgO or ZnO in the studied glass-ceramics led to the development of different crystalline phase assemblages, including lithium meta- and di-silicates, lithium calcium silicates, α-quartz, diopside, clinoenstatite, wollastonite, β-eucryptite ss, β-spodumene, α-tridymite, lithium zinc orthosilicate, hardystonite and willemite using various heat-treatment processes. The dilatometric thermal expansion of the glasses and their corresponding glass-ceramics were determined. A wide range of thermal expansion coefficient values were obtained for the investigated glasses and their corresponding crystalline products. The thermal expansion coefficients of the investigated glasses were decreased by Al 2 O 3 , MgO or ZnO additions. The α-values of the investigated glasses were ranged from (+18) to (+108) x 10 -7 K -1 (25-300 deg. C), while those of the glass-ceramics were (+3) to (+135) x 10 -7 K -1 (25-700 deg. C). The chemical durability of the glass-ceramics, towards the attack of 0.1N HCl solution, was markedly improved by Al 2 O 3 with MgO replacements. The composition containing 11.5 mol% Al 2 O 3 and 6.00 mol% MgO exhibited low thermal expansion values and good chemical durability

  9. Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

    International Nuclear Information System (INIS)

    Jeong, Jin-A; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

    2010-01-01

    We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/□ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

  10. Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

    2016-04-30

    Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

  11. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  12. Decoration of PbS nanoparticles on Al-doped ZnO nanorod array thin film with hydrogen treatment as a photoelectrode for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Hsiung; Chen, Chao-Hong [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chen, Dong-Hwang, E-mail: chendh@mail.ncku.edu.tw [Department of Chemical Engineering and Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2013-03-25

    Highlights: ► AZO nanorod array thin film is used as a photoanode for solar water splitting. ► Hydrogen treatment and sensitization by PbS nanoparticles enhance photocurrent. ► A novel ITO/FTO-free composite photoelectrode is developed. ► The pre-fabrication and use of an extra TCO thin film substrate is unnecessary. -- Abstract: Al-doped ZnO (AZO) nanorod arrays thin film with hydrogen treatment is directly used as a photoelectrode for solar water splitting without an extra transparent conducting oxide (TCO) thin film because it possesses the functions of TCO thin film and photoactive 1-dimensional nanostructured semiconductor simultaneously. To enhance the absorption in the visible region, PbS nanoparticles decorated the AZO nanorods via successive ionic layer adsorption and reaction route. The PbS nanoparticles have a face-centered cubic structure and their decoration does not destroy the 1-dimensional morphology of AZO nanorod arrays. With increasing the cycle number of PbS nanoparticles decoration, the grain size and loading of PbS nanoparticles become larger gradually which leads to lower energy bandgap and stronger absorption. A maximum photocurrent density of 1.65 mW cm{sup −2} is obtained when the cycle number is 20, which is much higher than those without PbS nanoparticles sensitization or hydrogen treatment. This demonstrates that the AZO nanorod array thin film with hydrogen treatment can be directly used as a photoelectrode without an extra TCO thin film. Because the use of expensive metals can be avoided and the pre-fabrication of TCO thin film substrate is necessary no more, the fabrication of such a composite photoelectrode becomes simple and low-cost. So, it has great potentials in solar water splitting after sensitization by quantum dots capable of visible light absorption.

  13. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

    Science.gov (United States)

    Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

    2017-09-13

    A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

  14. Mediator-free interaction of glucose oxidase, as model enzyme for immobilization, with Al-doped and undoped ZnO thin films laser-deposited on polycarbonate supports.

    Science.gov (United States)

    V T K P, Fidal; Inguva, Saikumar; Krishnamurthy, Satheesh; Marsili, Enrico; Mosnier, Jean-Paul; T S, Chandra

    2017-01-01

    Al doped and undoped ZnO thin films were deposited by pulsed-laser deposition on polycarbonate sheets. The films were characterized by optical transmission, Hall effect measurement, XRD and SEM. Optical transmission and surface reflectometry studies showed good transparency with thicknesses ∼100nm and surface roughness of 10nm. Hall effect measurements showed that the sheet carrier concentration was -1.44×10 15 cm -2 for AZO and -6×10 14 cm -2 for ZnO. The films were then modified by drop-casting glucose oxidase (GOx) without the use of any mediators. Higher protein concentration was observed on ZnO as compared to AZO with higher specific activity for ZnO (0.042Umg -1 ) compared to AZO (0.032Umg -1 ), and was in agreement with cyclic voltemmetry (CV). X-ray photoelectron spectroscopy (XPS) suggested that the protein was bound by dipole interactions between AZO lattice oxygen and the amino group of the enzyme. Chronoamperometry showed sensitivity of 5.5μAmM -1 cm -2 towards glucose for GOx/AZO and 2.2μAmM -1 cm -2 for GOx/ZnO. The limit of detection (LoD) was 167μM of glucose for GOx/AZO, as compared to 360μM for GOx/ZnO. The linearity was 0.28-28mM for GOx/AZO whereas it was 0.6-28mM for GOx/ZnO with a response time of 10s. Possibly due to higher enzyme loading, the decrease of impedance in presence of glucose was larger for GOx/ZnO as compared to GOx/AZO in electrochemical impedance spectroscopy (EIS). Analyses with clinical blood serum samples showed that the systems had good reproducibility and accuracy. The characteristics of novel ZnO and AZO thin films with GOx as a model enzyme, should prove useful for the future fabrication of inexpensive, highly sensitive, disposable electrochemical biosensors for high throughput diagnostics. Copyright © 2016 Elsevier Inc. All rights reserved.

  15. Structural and interfacial defects in c-axis oriented LiNbO{sub 3} thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    Energy Technology Data Exchange (ETDEWEB)

    Shandilya, Swati; Sreenivas, K; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Tomar, Monika [Miranda House, University of Delhi, Delhi 110007 (India)

    2009-05-07

    Highly c-axis oriented LiNbO{sub 3} films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO{sub 3} films under the optimized deposition condition. An extra peak at 905 cm{sup -1} was observed in the Raman spectra of LiNbO{sub 3} film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO{sub 3} films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO{sub 3} single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO{sub 3} film and the Al : ZnO layer.

  16. Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    International Nuclear Information System (INIS)

    Shandilya, Swati; Sreenivas, K; Gupta, Vinay; Tomar, Monika

    2009-01-01

    Highly c-axis oriented LiNbO 3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO 3 films under the optimized deposition condition. An extra peak at 905 cm -1 was observed in the Raman spectra of LiNbO 3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO 3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO 3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO 3 film and the Al : ZnO layer.

  17. Structural and interfacial defects in c-axis oriented LiNbO3 thin films grown by pulsed laser deposition on Si using Al : ZnO conducting layer

    Science.gov (United States)

    Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

    2009-05-01

    Highly c-axis oriented LiNbO3 films are deposited using pulsed laser deposition on a silicon substrate using a transparent conducting Al doped ZnO layer. X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phase and oriented LiNbO3 films under the optimized deposition condition. An extra peak at 905 cm-1 was observed in the Raman spectra of LiNbO3 film deposited at higher substrate temperature and higher oxygen pressure, and attributed to the presence of niobium antisite defects in the lattice. Dielectric constant and ac conductivity of oriented LiNbO3 films deposited under the static and rotating substrate modes have been studied. Films deposited under the rotating substrate mode exhibit dielectric properties close to the LiNbO3 single crystal. The cause of deviation in the dielectric properties of the film deposited under the static substrate mode, in comparison with the bulk, are discussed in the light of the possible formation of an interdiffusion layer at the interface of the LiNbO3 film and the Al : ZnO layer.

  18. Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

    Science.gov (United States)

    Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

    2017-06-01

    Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al 2 O 3 /ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K -1 , 113 and 847 (Ω cm) -1 , and 0.96 and 1.04 W m -1 K -1 , respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi 0.5 Sb 1.5 Te 3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output

  19. Effects of the crystallographic orientation of the Al2O3 substrate on the structural and the optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Lee, Chongmu; Park, Yeonkyu; Kim, Kyungha

    2006-01-01

    The structure and the optical properties of ZnO thin films grown on (0002) C-plane, (1120) A-plane, and (1012) R-plane sapphire substrates by using atomic layer epitaxy (ALE) were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence analysis (PL) techniques. The ZnO film grown on the C-plane sapphire substrate has the smallest full width at half maximum (FWHM) values for both the X-ray (0002) diffraction peak and the photoluminescence peak for near-band-edge emission whereas that grown on the R-plane sapphire substrate has the largest FWHM values. On the other hand, the ZnO film grown on the C-plane sapphire substrate has the strong texture of the c-axis but the roughest surface while those grown on the R- and the C-plane sapphire substrates have smoother surfaces but do not have the texture of the c-axis.

  20. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  1. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    Science.gov (United States)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  2. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    International Nuclear Information System (INIS)

    Zhao Yu; Fan Bingfeng; Chen Yiting; Zhuo Yi; Wang Gang; Pang Zhoujun; Liu Zhen

    2016-01-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO 2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO 2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. (paper)

  3. Influence of Dopants in ZnO Films on Defects

    Science.gov (United States)

    Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

    2008-12-01

    The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

  4. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    , or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

  5. Conductivity and touch-sensor application for atomic layer deposition ZnO and Al:ZnO on nylon nonwoven fiber mats

    International Nuclear Information System (INIS)

    Sweet, William J.; Oldham, Christopher J.; Parsons, Gregory N.

    2015-01-01

    Flexible electronics and wearable technology represent a novel and growing market for next generation devices. In this work, the authors deposit conductive zinc oxide films by atomic layer deposition onto nylon-6 nonwoven fiber mats and spun-cast films, and quantify the impact that deposition temperature, coating thickness, and aluminum doping have on the conductivity of the coated substrates. The authors produce aluminum doped zinc oxide (AZO) coated fibers with conductivity of 230 S/cm, which is ∼6× more conductive than ZnO coated fibers. Furthermore, the authors demonstrate AZO coated fibers maintain 62% of their conductivity after being bent around a 3 mm radius cylinder. As an example application, the authors fabricate an “all-fiber” pressure sensor using AZO coated nylon-6 electrodes. The sensor signal scales exponentially under small applied force (<50 g/cm 2 ), yielding a ∼10 6 × current change under 200 g/cm 2 . This lightweight, flexible, and breathable touch/force sensor could function, for example, as an electronically active nonwoven for personal or engineered system analysis and diagnostics

  6. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    NARCIS (Netherlands)

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  7. Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer

    Science.gov (United States)

    Chen, P. H.; Chen, Yu An; Chang, L. C.; Lai, W. C.; Kuo, Cheng Huang

    2015-07-01

    Al-doped ZnO (AZO) film was evaporated on double-side polished sapphire, p-GaN layers, n+-InGaN-GaN short-period superlattice (SPS) structures, and GaN-based light-emitting diodes (LEDs) by e-beam. The AZO film on the p-GaN layer after thermal annealing exhibited an extremely high transparency (98% at 450 nm) and a small specific contact resistance of 2.19 × 10-2 Ω cm2, which was almost the same as that of as-deposited AZO on n+-SPS structure. With 20 mA injection current, the forward voltages were 3.30 and 3.27 V, whereas the output powers were 4.32 and 4.07 mW for the LED with AZO on insert n+-SPS upper contact and the LED with AZO on p-GaN upper contact (without insert layer), respectively. The small specific contact resistance and low operation voltage of LED with AZO on p-GaN upper contact was achieved by rapid thermal annealing (RTA) process.

  8. Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al 2 O 3 (0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al 2 O 3 (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N 2 and O 2 ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects

  9. Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata, E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2015-08-07

    Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.

  10. An enzymatic biosensor based on three-dimensional ZnO nanotetrapods spatial net modified AlGaAs/GaAs high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China); Bioengineering Program, Lehigh University, Bethlehem, Pennsylvania 18015 (United States); Zhang, Xiaohui; Yan, Xiaoqin; Liao, Qingliang; Wang, Zengze; Zhang, Yue, E-mail: yuezhang@ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology, Beijing 100083 (China)

    2014-11-24

    We designed and constructed three dimensional (3D) zinc oxide Nanotetrapods (T-ZnOs) modified AlGaAs/GaAs high electron mobility transistors (HEMTs) for enzymatic uric acid (UA) detection. The chemical vapor deposition synthesized T-ZnOs was distributed on the gate areas of HEMTs in order to immobilize uricase and improve the sensitivity of the HEMTs. Combining with the high efficiency of enzyme immobilization by T-ZnOs and high sensitivity from HEMT, the as-constructed uricase/T-ZnOs/HEMTs biosensor showed fast response towards UA at ∼1 s, wide linear range from 0.2 nM to 0.2 mM and the low detect limit at 0.2 nM. The results point out an avenue to design electronic device as miniaturized lab-on-chip device for high sensitive and specific in biomedical and clinical diagnosis applications.

  11. Effect of Concurrent ZnO Addition and AlF3 Reduction on the Elastic Properties of Tellurite Based Glass System

    Directory of Open Access Journals (Sweden)

    Haji Abdul Aziz Sidek

    2014-01-01

    Full Text Available New ternary zinc oxyfluorotellurite (ZOFT with the composition (ZnOx-(AlF3y-(TeO2z, where 5≤x<35; 5≤y≤25; 60≤z≤70, has been successfully prepared by the conventional rapid melt quenching technique. Density, molar volume, and glass transition temperature have been assessed for each ZOFT glass sample. The longitudinal and transverse ultrasonic waves propagated in each glass sample were measured using a MBS8020 ultrasonic data acquisition system at 5 MHz frequency and room temperature. The longitudinal modulus (L, shear modulus (G, Young’s modulus (E, bulk modulus (K, and Poisson’s ratio (σ are assessed from both velocity data and their respective density. The compositional dependence of the ultrasonic velocities and related parameters are discussed to understand the rigidity and compactness of the glass system studied.

  12. Effect of the Molar Ratio of B2O3 to Bi2O3 in Al Paste with Bi2O3-B2O3-ZnO Glass on Screen Printed Contact Formation and Si Solar Cell Performance

    Science.gov (United States)

    Kim, Bit-Na; Kim, Hyeong Jun; Chang, Hyo Sik; Hong, Hyun Seon; Ryu, Sung-Soo; Lee, Heon

    2013-10-01

    In this study, eco-friendly Pb-free Bi2O3-B2O3-ZnO glass frits were chosen as an inorganic additive for the Al paste used in Si solar cells. The effects of the molar ratio of Bi2O3 to B2O3 in the glass composition on the electrical resistance of the Al electrode and on the cell performance were investigated. The results showed that as the molar ratio of Bi2O3 to B2O3 increased, the glass transition temperature and softening temperature decreased because of the reduced glass viscosity. In Al screen-printed Si solar cells, as the molar ratio of Bi2O3 to B2O3 increased, the sheet electrical resistance of the Al electrode decreased and the cell efficiency increased. The uniformity and thickness of the back-surface field was significantly influenced by the glass composition.

  13. An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics

    Science.gov (United States)

    Park, Jun-Hyuk; Ahn, Kyung-Jun; Park, Kang-Il; Na, Seok-In; Kim, Han-Ki

    2010-03-01

    We report the characteristics of Al-doped zinc oxide (AZO) films prepared by a highly efficient cylindrical rotating magnetron sputtering (CRMS) system for use as a transparent conducting electrode in cost-efficient bulk hetero-junction organic solar cells (OSCs). Using a rotating cylindrical type cathode with an AZO target, whose usage was above 80%, we were able to obtain a low cost and indium free AZO electrode with a low sheet resistance of ~4.59 Ω/sq, a high transparency of 85% in the visible wavelength region and a work function of 4.9 eV at a substrate temperature of 230 °C. Moreover, the neutral poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) based OSC fabricated on the CRMS-grown AZO electrode at 230 °C showed an open circuit voltage of 0.5 V, a short circuit current of 8.94 mA cm-2, a fill factor of 45% and power conversion efficiency of 2.01%, indicating that CRMS is a promising cost-efficient AZO deposition technique for low cost OSCs.

  14. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India); Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India)], E-mail: rammehra2003@yahoo.com

    2008-12-30

    This paper reports deposition and characterization of Zn{sub 0.94}Co{sub 0.05}Al{sub 0.01}O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  15. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    International Nuclear Information System (INIS)

    Sharma, Mamta; Mehra, R.M.

    2008-01-01

    This paper reports deposition and characterization of Zn 0.94 Co 0.05 Al 0.01 O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  16. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C; Berasategui, E G; Bayón, R; Barriga, J; Escobar Galindo, R; Barros, R; Gaspar, D; Nunes, D; Calmeiro, T; Martins, R; Fortunato, E

    2014-01-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al 2 O 3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10 –4  Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 10 7  Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation. (paper)

  17. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    Science.gov (United States)

    Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

    2014-12-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

  18. Defect-induced magnetic order in pure ZnO films

    Science.gov (United States)

    Khalid, M.; Ziese, M.; Setzer, A.; Esquinazi, P.; Lorenz, M.; Hochmuth, H.; Grundmann, M.; Spemann, D.; Butz, T.; Brauer, G.; Anwand, W.; Fischer, G.; Adeagbo, W. A.; Hergert, W.; Ernst, A.

    2009-07-01

    We have investigated the magnetic properties of pure ZnO thin films grown under N2 pressure on a -, c -, and r -plane Al2O3 substrates by pulsed-laser deposition. The substrate temperature and the N2 pressure were varied from room temperature to 570°C and from 0.007 to 1.0 mbar, respectively. The magnetic properties of bare substrates and ZnO films were investigated by SQUID magnetometry. ZnO films grown on c - and a -plane Al2O3 substrates did not show significant ferromagnetism. However, ZnO films grown on r -plane Al2O3 showed reproducible ferromagnetism at 300 K when grown at 300-400°C and 0.1-1.0 mbar N2 pressure. Positron annihilation spectroscopy measurements as well as density-functional theory calculations suggest that the ferromagnetism in ZnO films is related to Zn vacancies.

  19. Effect of oxygen to argon flow ratio on the properties of Al-doped ZnO films for amorphous silicon thin film solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Lien, Shui-Yang, E-mail: syl@mdu.edu.tw [Department of Materials Science and Engineering, MingDao University, ChangHua 52345, Taiwan, ROC (China); Huang, Yung-Chuan [Department of Materials Science and Engineering, MingDao University, ChangHua 52345, Taiwan, ROC (China); Wang, Chao-Chun [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Liu, Chueh-Yang [Department of Materials Science and Engineering, MingDao University, ChangHua 52345, Taiwan, ROC (China); Nautiyal, Asheesh [Department of Mechanical Engineering, Yuan Ze University, 135 Yuan-Tung Road, Chungli, 320 Taoyuan, Taiwan, ROC (China); Wuu, Dong-Sing [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Lee, Shuo-Jun [Department of Mechanical Engineering, Yuan Ze University, 135 Yuan-Tung Road, Chungli, 320 Taoyuan, Taiwan, ROC (China)

    2013-02-01

    Transparent conductive oxide thin films in solar cell fabrication have attracted much attention due to their high conductivity and transmittance. In this paper, we have investigated the aluminum-doped zinc oxide (AZO) thin films prepared by radiofrequency magnetron sputtering on Asahi U-type SnO{sub 2} glass with different O{sub 2}/Ar flow ratios in vacuum chamber. Furthermore, the micro-structural, electrical, and optical properties of AZO/SnO{sub 2} films were studied. The change in O{sub 2}/Ar flow ratios is found to significantly affect the haze value, and slightly affect electrical resistivity and transmittance of the films. Afterward, the fabricated AZO thin films with different O{sub 2}/Ar flow ratios were used for building the solar cell devices. The current–voltage and external quantum efficiency characteristics were investigated for the solar cell devices. The optimized O{sub 2}/Ar flow ratio of 3 for solar device shows the best efficiency of 10.41%, and a 20% increase in short-circuit current density compared to typical Asahi solar cells. - Highlights: ► A thin Al-doped zinc oxide (AZO) film has been deposited on SnO{sub 2} substrates. ► The AZO film deposited at an O{sub 2}/Ar ratio of 3 shows low resistivity and high haze. ► The AZO film contains tiny grains that enhance light scattering. ► The amorphous silicon solar cell with the AZO layer shows a 20% increase in Jsc.

  20. Room-temperature ferromagnetic properties of Cu-doped ZnO rod ...

    Indian Academy of Sciences (India)

    We have investigated properties of the Cu-doped ZnO crystalline film synthesized by the hydrothermal method. X-ray diffraction and X-ray ... DMSs are semiconducting alloys whose lattice is made up in part of substitutional magnetic ... investigate Cu-doped ZnO system (Hou et al 2007a, b), as. Cu is a potential magnetic ion ...

  1. Explanation of ferromagnetism origin in N-doped ZnO by first ...

    Indian Academy of Sciences (India)

    Moreover, ZnO doped with. 3d TM elements has been studied widely since the model calculation by Dietl et al predicted the possibility of ferro- magnetism in ZnO with a small amount of Mn as an impurity. [4]. However, TM doping often suffers from the problems related to precipitates or secondary phase formation undesir-.

  2. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

    2007-10-15

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

  3. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    International Nuclear Information System (INIS)

    Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

    2007-01-01

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

  4. UiO-66-NH2 Metal-Organic Framework (MOF) Nucleation on TiO2, ZnO, and Al2O3 Atomic Layer Deposition-Treated Polymer Fibers: Role of Metal Oxide on MOF Growth and Catalytic Hydrolysis of Chemical Warfare Agent Simulants.

    Science.gov (United States)

    Lee, Dennis T; Zhao, Junjie; Oldham, Christopher J; Peterson, Gregory W; Parsons, Gregory N

    2017-12-27

    Metal-organic frameworks (MOFs) chemically bound to polymeric microfibrous textiles show promising performance for many future applications. In particular, Zr-based UiO-66-family MOF-textiles have been shown to catalytically degrade highly toxic chemical warfare agents (CWAs), where favorable MOF/polymer bonding and adhesion are attained by placing a nanoscale metal-oxide layer on the polymer fiber preceding MOF growth. To date, however, the nucleation mechanism of Zr-based MOFs on different metal oxides and how product performance is affected are not well understood. Herein, we provide new insight into how different inorganic nucleation films (i.e., Al 2 O 3 , ZnO, or TiO 2 ) conformally coated on polypropylene (PP) nonwoven textiles via atomic layer deposition (ALD) influence the quality, overall surface area, and the fractional yield of UiO-66-NH 2 MOF crystals solvothermally grown on fiber substrates. Of the materials explored, we find that TiO 2 ALD layers lead to the most effective overall MOF/fiber adhesion, uniformity, and a rapid catalytic degradation rate for a CWA simulant, dimethyl p-nitrophenyl phosphate (DMNP) with t 1/2 = 15 min, 580-fold faster than the catalytic performance of untreated PP textiles. Interestingly, compared to ALD TiO 2 and Al 2 O 3 , ALD ZnO induces a larger MOF yield in solution and mass loading on PP fibrous mats. However, this larger MOF yield is ascribed to chemical instability of the ZnO layer under MOF formation condition, leading to Zn 2+ ions that promote further homogeneous MOF growth. Insights presented here improve understanding of compatibility between active MOF materials and substrate surfaces, which we believe will help advanced MOF composite materials for a variety of useful functions.

  5. Effect of shallow donors on Curie–Weiss temperature of Co-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Shuxia, E-mail: gsx0391@sina.com [Department of Physics, Jiaozuo Teachers College, Jiaozuo 454001 (China); Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004 (China); Li, Jiwu [Department of Physics, Jiaozuo Teachers College, Jiaozuo 454001 (China); Du, Zuliang [Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004 (China)

    2014-12-15

    Co-doped ZnO and Al, Co co-doped ZnO polycrystalline powders were synthesized by co-precipitation method. The magnetization curves measured at 2 K show no hysteresis neither remanence for all samples. ZnO:Co grown at low temperature has a positive Curie–Weiss temperature Θ, and ZnO:Co grown at high temperature has a negative Θ. But Al-doped ZnO:Co grown at high temperature has a positive Θ. Positive Curie–Weiss temperature Θ was considered to have relation to the presence of shallow donors in the samples. - Highlights: • Co-doped ZnO and Al, Co co-doped ZnO polycrystalline powders were synthesized. • No hysteresis is observed for all samples. • The Curie–Weiss temperature Θ changes its sign by Al doping. • Positive Θ should be related to shallow donors.

  6. Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

    Science.gov (United States)

    Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

    2018-05-01

    This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

  7. The thermodynamic activity of ZnO in silicate melts

    Science.gov (United States)

    Reyes, R. A.; Gaskell, D. R.

    1983-12-01

    The activity of ZnO in ZnO-SiO2 and CaO-ZnO-SiO2 melts has been measured at 1560 °C using a transpiration technique with CO-CO2 mixtures as the carrier gas. The activities of ZnO in dilute solution in 42 wt pct SiO2-38 wt pct CaO-20 wt pct A12O3 in the range 1400° to 1550 °C and in 62 wt pct SiO2-23.3 wt pct CaO-14.7 wt pct A12O3 at 1550 °C have also been measured. The measured free energies of formation of ZnO-SiO2 melts are significantly more negative than published estimated values and this, together with the behavior observed in the system CaO-Al2O3-SiO2, indicate that ZnO is a relatively basic oxide. The results are discussed in terms of the polymerization model of binary silicate melts and ideal silicate mixing in ternary silicate melts. The behavior of ZnO in dilute solution in CaO-Al2O3-SiO2 melts is discussed in terms of the possibility of the fluxing of ZnO by iron blast furnace slags.

  8. Synthesis, structural and optical properties of nanoparticles (Al, V ...

    Indian Academy of Sciences (India)

    The synthesis by the sol–gel method, structural and optical properties of ZnO, Zn0.99Al0.01O (AlZ),. Zn0.9V0.1O (VZ) ... drops of the resulting suspension containing the synthesized .... ZnO films on silicon substrate, they thought that this emis-.

  9. Synthesis of Vertically Aligned ZnO Nano rods on Various Substrates

    International Nuclear Information System (INIS)

    Hassan, J.J.; Hassan, Z.; Abu Hassan, H.; Mahdi, M.A.

    2011-01-01

    We successfully synthesized vertically aligned ZnO nano rods on Si, GaN, Sic, Al 2 O 3 , ITO, and quartz substrates using microwave assisted chemical bath deposition (MA-CBD) method. All these types of substrates were seeded with PVA-ZnO nano composites layer prior to the nano rods growth. The effect of substrate type on the morphology of the ZnO nano rods was studied. The diameter of grown ZnO nano rods ranged from 50 nm to 200 nm. Structural quality and morphology of ZnO nano rods were determined by x-ray diffraction and scanning electron microscopy, which revealed hexagonal wurtzite structures perpendicular to the substrate along the z-axis in the direction of (002). Photoluminescence measurements of grown ZnO nano rods on all substrates exhibited high UV peak intensity. Raman scattering studies were conducted to estimate the lattice vibration modes. (author)

  10. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  11. High Temperature Thermoelectric Properties of ZnO Based Materials

    DEFF Research Database (Denmark)

    Han, Li

    of the dopants and dopant concentrations, a large power factor was obtainable. The sample with the composition of Zn0.9Cd0.1Sc0.01O obtained the highest zT ∼0.3 @1173 K, ~0.24 @1073K, and a good average zT which is better than the state-of-the-art n-type thermoelectric oxide materials. Meanwhile, Sc-doped Zn......This thesis investigated the high temperature thermoelectric properties of ZnO based materials. The investigation first focused on the doping mechanisms of Al-doped ZnO, and then the influence of spark plasma sintering conditions on the thermoelectric properties of Al, Ga-dually doped Zn......O. Following that, the nanostructuring effect for Al-doped ZnO was systematically investigated using samples with different microstructure morphologies. At last, the newly developed ZnCdO materials with superior thermoelectric properties and thermal stability were introduced as promising substitutions...

  12. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  13. Vapour transport growth of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Elshaer, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Technical University Braunschweig, Institute of Applied Physics, Braunschweig (Germany); Bertram, F.; Christen, J. [University of Magdeburg, Department of Solid State Physics, Magdeburg (Germany)

    2007-07-15

    The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many reported fabrication methods, especially for ZnO nanorods are mostly based on catalyst-assisted growth techniques that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on catalyst-free vapour-phase epitaxy growth of ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3} using purely elemental sources at relatively low temperatures and growth pressure. ZnO nanorods with widths of 80-900 nm and lengths of up to 12 {mu}m were obtained. Nanorod density on the order of 10{sup 9} cm{sup -2} with homogenous luminescence and high purity was also noted. (orig.)

  14. Ion-implantation induced defects in ZnO studied by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Sekiguchi, T.; Suzuki, R.

    2004-01-01

    Introduction and annealing behavior of defects in Al + -implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al + -implantation. With increasing ion dose above 10 14 Al + /cm 2 the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

  15. Ion-implantation induced defects in ZnO studied by a slow positron beam

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A. [Japan Atomic Energy Research Institute, Gunma (Japan); Sekiguchi, T. [National Inst. for Materials Science, Tsukuba, Ibaraki (Japan); Suzuki, R. [National Inst. of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)

    2004-07-01

    Introduction and annealing behavior of defects in Al{sup +}-implanted ZnO have been studied using an energy variable slow positron beam. Vacancy clusters are produced after Al{sup +}-implantation. With increasing ion dose above 10{sup 14} Al{sup +}/cm{sup 2} the implanted layer is amorphized. Heat treatment up to 600 C enhances the creation of large voids that allow the positronium formation. The large voids disappear accompanying the recrystallization process by further heat treatment above 600 C. Afterwards, implanted Al impurities are completely activated to contribute to the n-type conduction. The ZnO crystal quality is also improved after recrystallization. (orig.)

  16. Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

    Science.gov (United States)

    2012-01-01

    12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

  17. Hybrid AC EL structures with thin protective ZnO film

    International Nuclear Information System (INIS)

    Tsvetkova, E; Dikov, H; Kolentsov, K; Yourukova, L; Zhechev, D; Steflekova, V

    2008-01-01

    Alternating current hybrid electroluminescent Al/SnO 2 /ZnS: Cu/ZnO/Al structures with blue emission have been prepared. In these ZnO films are used as protective layers. The optical properties of different RF magnetron sputtered ZnO films have been studied. The voltage - brightness characteristics of AC EL structures with a ZnO protective film and conventional structures with a TiO 2 protective layer are compared. The investigation shows that the brightness of the structures with a ZnO protective film is higher. The improved characteristics of these new hybrid structures could be used in preparing various systems for representation of permanent or variable light information

  18. ZnO Film Photocatalysts

    Directory of Open Access Journals (Sweden)

    Bosi Yin

    2014-01-01

    Full Text Available We have synthesized high-quality, nanoscale ultrathin ZnO films at relatively low temperature using a facile and effective hydrothermal approach. ZnO films were characterized by scanning electron microscope (SEM, X-ray diffraction (XRD, Raman spectroscopy, photoluminescence spectra (PL, and UV-vis absorption spectroscopy. The products demonstrated 95% photodegradation efficiency with Congo red (CR after 40 min irradiation. The photocatalytic degradation experiments of methyl orange (MO and eosin red also were carried out. The results indicate that the as-obtained ZnO films might be promising candidates as the excellent photocatalysts for elimination of waste water.

  19. Specifications of ZnO growth for heterostructure solar cell and PC1D based simulations

    Directory of Open Access Journals (Sweden)

    Babar Hussain

    2015-12-01

    Full Text Available This data article is related to our recently published article (Hussain et al., in press [1] where we have proposed a new solar cell model based on n-ZnO as front layer and p-Si as rear region. The ZnO layer will act as an active n-layer as well as antireflection (AR coating saving considerable processing cost. There are several reports presenting use of ZnO as window/antireflection coating in solar cells (Mansoor et al., 2015; Haq et al., 2014; Hussain et al., 2014; Matsui et al., 2014; Ding et al., 2014 [2–6] but, here, we provide data specifically related to simultaneous use of ZnO as n-layer and AR coating. Apart from the information we already published, we provide additional data related to growth of ZnO (with and without Ga incorporation layers using MOCVD. The data related to PC1D based simulation of internal and external quantum efficiencies with and without antireflection effects of ZnO as well as the effects of doping level in p-Si on current–voltage characteristics have been provided.

  20. Enhancement of exciton radiative recombination for In-doped ZnO nanowires with aluminum cylindrical micropillars

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jen-Cheng; Liang, Yu-Ting; Cheng, Fang-Ching; Fang, Chia-Hui; Chen, Hung-Ing; Tsai, Chung-Yuan [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China); Jiang, Joe-Air [Department of Bio-Industrial Mechatronics Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan, ROC (China)

    2013-04-15

    Zinc oxide (ZnO) has attracted intensive research effort in recent years, due to its unique properties and versatile applications. Recent work on the conservation of surface plasmon (SP) and light through period metal arrays has elucidated the propagation of SP resonance behavior. In this paper, we discuss the enhancement of exciton radiative recombination of the ZnO nanowires with Al cylindrical micropillars. Optical characterization of exciton interacted with SP resonance for indium-doped ZnO nanowires with Al cylindrical micropillars has been also investigated. From photoluminescence spectra of In-doped ZnO nanowires, it is found that the In-doped ZnO nanowires have a blue emission at 425 nm, which resulted from the ZnO band-to-band transition. Prior to the arrays of samples were annealed, a broad green emission centered at 500 nm was observed, which is attributed to ZnO native point defects. The relatively strong green band emission results from the radiative recombination that arises from the ionized oxygen vacancy and surface-defect related luminescence. Compare the In-doped ZnO on Si substrate, the enhancement of PL intensity for In-doped ZnO with deposited Al pattern film can be attributed to strong interaction with SP resonance and exciton over a broad temperature range. These experimental results indicate that Al cylindrical micropillars can significantly enhance carrier confinement and increase the quantum efficiency of In-doped ZnO/Al heterostructures due to the interaction of SP resonance between the In-doped ZnO nanowires and Al cylindrical micropillar structures, the surface-defect related luminescence, and the auxiliary test structures with variable micropillar parameters. -- Highlights: ► We examine the exciton radiative recombination of the ZnO nanowires. ► Al cylindrical micropillars affect the carrier recombination of ZnO/Al structures. ► The interaction of SP resonance between In-doped ZnO nanowire and Al pattern film. ► The carrier

  1. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    International Nuclear Information System (INIS)

    Kao, Kuo-Sheng; Shih, Wei-Che; Ye, Wei-Tsuen; Cheng, Da-Long

    2016-01-01

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD_U_V is influenced by SAW types and ZnO film characteristics.

  2. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Sheng [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Shih, Wei-Che [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Ye, Wei-Tsuen [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Cheng, Da-Long, E-mail: dlcheng@stu.edu.tw [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China)

    2016-04-30

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD{sub UV} is influenced by SAW types and ZnO film characteristics.

  3. Analysis of Li-related defects in ZnO thin films influenced by ...

    Indian Academy of Sciences (India)

    wavelength optoelectronic devices, such as ultraviolet-light emitting diodes and laser diodes, because of its wide bandgap (3·37 eV) and large exciton binding energy. (60 meV) (Osamu et al 2000; Look et al 2004). A key issue in exploring ZnO is the ...

  4. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  5. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  6. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2005-05-15

    Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

  7. Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

    Science.gov (United States)

    Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

    2013-04-01

    We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

  8. Implanted ZnO thin films: Microstructure, electrical and electronic properties

    International Nuclear Information System (INIS)

    Lee, J.; Metson, J.; Evans, P.J.; Kinsey, R.; Bhattacharyya, D.

    2007-01-01

    Magnetron sputtered polycrystalline ZnO thin films were implanted using Al, Ag, Sn, Sb and codoped with TiN in order to improve the conductivity and to attempt to achieve p-type behaviour. Structural and electrical properties of the implanted ZnO thin films were examined with X-ray diffractometry (XRD), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and conductivity measurements. Depth profiles of the implanted elements varied with the implant species. Implantation causes a partial amorphisation of the crystalline structure and decreases the effective grain size of the films. One of the findings is the improvement, as a consequence of implantation, in the conductivity of initially poorly conductive samples. Heavy doping may help for the conversion of conduction type of ZnO thin films. Annealing in vacuum mitigated structural damage and stress caused by implantation, and improved the conductivity of the implanted ZnO thin films

  9. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

    2016-01-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  10. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  11. In situ DRIFTS study of O{sub 3} adsorption on CaO, γ-Al{sub 2}O{sub 3}, CuO, α-Fe{sub 2}O{sub 3} and ZnO at room temperature for the catalytic ozonation of cinnamaldehyde

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jianfeng; Su, Tongming; Jiang, Yuexiu; Xie, Xinling [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Qin, Zuzeng, E-mail: qinzuzeng@gmail.com [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Ji, Hongbing, E-mail: jihb@mail.sysu.edu.cn [School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China)

    2017-08-01

    Highlights: • In situ DRIFTS study of O{sub 3} adsorption on metal oxides at room temperature. • Using acidic probe molecules (DRIFTS) characterization of surface basicity. • Correlation between basic strength of metal oxides and O{sub 3} adsorption. • Study on the competitive adsorption of O{sub 3} and CO{sub 2}. • DRIFTS study of cinnamaldehyde ozonation and benzaldehyde excessive oxidation. - Abstract: In situ DRIFTS were conducted to identify adsorbed ozone and/or adsorbed oxygen species on CaO, ZnO, γ-Al{sub 2}O{sub 3}, CuO and α-Fe{sub 2}O{sub 3} surfaces at room temperature. Samples were characterized by means of TG, XRD, N{sub 2} adsorption–desorption, pyridine-IR, nitrobenzene-IR, chloroform-IR, and CO{sub 2}-TPD. Pyridine-DRIFTS measurements evidence two kinds of acid sites in all the samples. Nitrobenzene, chloroform-DRIFTS, and CO{sub 2}-TPD reveal that there are large amounts of medium-strength base sites on all the metal oxides, and only CaO, ZnO, and γ-Al{sub 2}O{sub 3} have strong base sites. And the benzaldehyde selectivity was increased in the same order of the alkalinity of the metal oxides. With weaker sites, ozone molecules form coordinative complexes bound via the terminal oxygen atom, observed by vibrational frequencies at 2095–2122 and 1026–1054 cm{sup −1}. The formation of ozonide O{sub 3}{sup −} at 790 cm{sup −1}, atomic oxygen at 1317 cm{sup −1}, and superoxide O{sub 2}{sup −} at 1124 cm{sup −1} was detected; these species are believed to be intermediates of O{sub 3} decomposition on strong acid/base sites. The adsorption of ozone on metal oxides is a weak adsorption, and other gases, such as CO{sub 2}, will compete with O{sub 3} adsorption. The mechanism of cinnamaldehyde ozonation at room temperature over CaO shows that cinnamaldehyde can not only be oxidized into cinnamic acid, but also be further oxidized into benzaldehyde, benzoic acid, maleic anhydride, and ultimately mineralized to CO{sub 2} in the

  12. Defect engineering of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Weber, M.H. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)], E-mail: m_weber@wsu.edu; Selim, F.A.; Solodovnikov, D.; Lynn, K.G. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)

    2008-10-31

    The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C.

  13. Defect engineering of ZnO

    International Nuclear Information System (INIS)

    Weber, M.H.; Selim, F.A.; Solodovnikov, D.; Lynn, K.G.

    2008-01-01

    The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C

  14. Trivalent dopants on ZnO semiconductor obtained by mechanical milling

    Energy Technology Data Exchange (ETDEWEB)

    Damonte, L.C., E-mail: damonte@fisica.unlp.edu.a [Dto. De Fisica, UNLP, IFLP-CONICET, C.C.67 (1900) La Plata (Argentina); Dto. De Fisica Aplicada, Universidad Politecnica de Valencia, Valencia (Spain); Donderis, V. [Dto. De Ingenieria Electrica, Universidad Politecnica de Valencia, Cami de Vera s/n, 46071 Valencia (Spain); Hernandez-Fenollosa, M.A. [Dto. De Fisica Aplicada, Universidad Politecnica de Valencia, Valencia (Spain)

    2009-08-26

    Al-doped ZnO powders were obtained by mechanical milling. This n-type oxide material is of interest for application in electronic devices as solar cells. The incorporation of the metal dopant into the ZnO wurtzite structure has been verified by X-ray diffraction, positron annihilation spectroscopy and optical analysis. The optical reflection measurements were strongly affected by the Al incorporation. The positron annihilation spectroscopy constituted an adequate probe to sense the cation substitution in the doped semiconductor.

  15. Trivalent dopants on ZnO semiconductor obtained by mechanical milling

    International Nuclear Information System (INIS)

    Damonte, L.C.; Donderis, V.; Hernandez-Fenollosa, M.A.

    2009-01-01

    Al-doped ZnO powders were obtained by mechanical milling. This n-type oxide material is of interest for application in electronic devices as solar cells. The incorporation of the metal dopant into the ZnO wurtzite structure has been verified by X-ray diffraction, positron annihilation spectroscopy and optical analysis. The optical reflection measurements were strongly affected by the Al incorporation. The positron annihilation spectroscopy constituted an adequate probe to sense the cation substitution in the doped semiconductor.

  16. Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films

    International Nuclear Information System (INIS)

    Ying Minju; Du Xiaolong; Mei Zengxia; Zeng Zhaoquan; Zheng Hao; Wang Yong; Jia Jinfeng; Zhang Ze; Xue Qikun

    2004-01-01

    The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD rocking curves. The mechanisms for the elimination of rotation domains in the ZnO films are discussed

  17. The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

    KAUST Repository

    Wang, H. H.

    2015-03-20

    The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

  18. Retracted: Study of the wettability of ZnO nanofilms

    Directory of Open Access Journals (Sweden)

    Ujjwal M Joshi

    2012-04-01

    Full Text Available Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

  19. ZnO nanorods/AZO photoanode for perovskite solar cells fabricated in ambient air

    Science.gov (United States)

    La Ferrara, Vera; De Maria, Antonella; Rametta, Gabriella; Della Noce, Marco; Vittoria Mercaldo, Lucia; Borriello, Carmela; Bruno, Annalisa; Delli Veneri, Paola

    2017-08-01

    ZnO nanorods are a good candidate for replacing standard photoanodes, such as TiO2, in perovskite solar cells and in principle superseding the high performances already obtained. This is possible because ZnO nanorods have a fast electron transport rate due to their large surface area. An array of ZnO nanorods is grown by chemical bath deposition starting from Al-doped ZnO (AZO) used both as a seed layer and as an efficient transparent anode in the visible spectral range. In particular, in this work we fabricate methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells using glass/AZO/ZnO nanorods/perovskite/Spiro-OMeTAD/Au as the architecture. The growth of ZnO nanorods has been optimized by varying the precursor concentrations, growth time and solution temperature. All the fabrication process and photovoltaic characterizations have been carried out in ambient air and the devices have not been encapsulated. Power conversion efficiency as high as 7.0% has been obtained with a good stability over 20 d. This is the highest reported value to the best of our knowledge and it is a promising result for the development of perovskite solar cells based on ZnO nanorods and AZO.

  20. Carrier transport mechanisms of hybrid ZnO nanorod-polymer LEDs

    International Nuclear Information System (INIS)

    Cho, Sungjae; Lee, Kyuseung; Son, Dongick; Oh, Youngjei; Choi, Wonkook; Angadi, Basavaraj

    2014-01-01

    A hybrid polymer-nanorod (NR) light-emitting diode (LED), consisting of a hole-conducting polymer poly (9-vinyl carbazole) (PVK) and ZnO nanorod (NR) composite, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/(PVK + ZnO nanorods)/Al is fabricated through a simple spin coating technique. TEM images shows inhomogeneous deposition and the agglomeration of ZnO NRs, which is explained through their low probability of adsorption on PVK due to two-dimensional structural property. In the current-voltage characteristics, negative differential resistance (NDR) phenomenon is observed corresponding to device structure without ZnO NRs. The carrier transport behavior in the LED device is well described by both ohmic and space-charge-limited-current (SCLC) mechanisms. Broad blue electroluminescence (EL) consisting of two sub peaks, are centered at 441 nm and the other at 495 nm, is observed, which indicates that the ZnO nanorod play a role as a recombination center for excitons. The red shift in the position of the EL compared to that photoluminescence is well explained through band offsets at the heterojunction between the PVK and ZnO NRs.

  1. Hybrid electroluminescent device based on MEH-PPV and ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hewidy, Dina; Gadallah, A.-S.; Fattah, G. Abdel

    2017-02-15

    Hybrid organic/inorganic electroluminescent device based on the structure of glass/ITO/PEDOT:PSS/MEH-PPV/ZnO/ZnO submicrorods/Al has been manufactured. Spin coating has been used to deposit both PEDOT:PSS and MEH-PPV. Two-step process has been used to synthesis ZnO submicrorods, namely, spin coating and chemical bath deposition. Changing the dimensions of the ZnO submicrorods in this layer structure has been investigated to improve the performance of the organic/inorganic electroluminescence device. Such layer structure provides electroluminescence with narrow emission bands due to a high gain with this structure. X-ray diffraction patterns and scanning electron microscope images show that ZnO submicrorods have hexagon structure. Current-voltage curve for the structure has been reported. Electroluminescence curves (electroluminescence intensity versus wavelength) at different bias voltages have been presented and these results show narrowing in full width at half maximum in the spectra at high current density compared to photoluminescence excitation. The narrowing in the spectrum has been explained. - Highlights: • Manufacturing of MEH-PPV and ZnO electroluminescent device has been reported. • Spin coating and chemical bath deposition have been used for preparation of ZnO. • SEM images and X-ray diffraction of ZnO have been presented. • Current-voltage curves and electroluminescent measurements have been reported.

  2. Acceptors in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    McCluskey, Matthew D., E-mail: mattmcc@wsu.edu; Corolewski, Caleb D.; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Walter, Eric D. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Norton, M. Grant; Harrison, Kale W. [School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920 (United States); Ha, Su [Voiland School of Chemical Engineering and Bioengineering, Washington State University, Pullman, Washington 99164-6515 (United States)

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

  3. Structural and optical properties of ZnO nanostructures electrochemically synthesized on AZO/Ag/AZO-multilayer-film-coated polyethersulfone substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; Yoo, Chanho; No, Youngsoo; Kim, Suyoun; Kim, Taewhan; Cho, Woonjo; Kim, Jinyoung

    2012-01-01

    ZnO nanostructures were formed on Al-doped ZnO (AZO)/Ag/AZO-multilayer-film-coated flexible polyethersulfone (PES) substrates at low temperature by using an electrochemical deposition method. The resistivity of the AZO/Ag/AZO multilayer films decreased with increasing thickness of the Ag film. X-ray diffraction patterns for the ZnO nanostructures showed that the crystal structure of the ZnO was hexagonal wurtzite and that the orientation was along the c-axis perpendicular to the substrate. Scanning electron microscopy images showed that the ZnO nanostructures grown at current densities of - 1.0 and - 1.5 mA/cm 2 were ZnO nanorods with diameters of 150 nm and ZnO nanoflowers with a planar dimension, respectively. Photoluminescence spectra showed that the band-edge emission peak of the ZnO nanostructures dominantly appeared in the ultraviolet region. These results showed that ZnO nanorods and nanoflowers with high quality were synthesized on AZO/Ag/AZO-multilayer-film-coated PES substrates.

  4. Calculation of DSSC parameters based on ZnO nanorod/TiO2 mesoporous photoanode

    Science.gov (United States)

    Safriani, L.; Nurrida, A.; Mulyana, C.; Susilawati, T.; Bahtiar, A.; Aprilia, A.

    2017-07-01

    Photoanode of dye sensitized solar cell (DSSC) plays an important role as electron transport media to accept photogenerated electron from excited state of dye. There are several physical properties that are required from photoanode of DSSC. It should be highly transparent, have large surface area, has a conduction band lower than LUMO of dye molecule, has high charge carrier mobility and finally has a good stability in redox electrolyte process. In this work, DSSC with structure FTO/ZnO nanorod/TiO2 mesoporous/Ru-dye/gel electrolyte/ Pt/FTO has been fabricated. In order to modified the structures of photoanode, ZnO nanorod was grown on aluminium doped ZnO seed layer by variation concentration of Al (0 wt%, 0.5 wt% and 1.0 wt%). Zinc nitrate hexahydrate and hexamethylenetetramine used as raw materials for ZnO nanorod growth solution and deposited by self-assembly methods on FTO/Al doped ZnO seed layer. It is then followed by deposition of titania (TiO2) paste by screen printing methods. DSSC parameters i.e. ideally factor (n), series resistance (RS ), and shunt resistance (RSH ) was derived from current density-voltage (I-V) curve using the simplify equation of ideal diode model. The influences of ZnO photoanode structures to the solar cell performance will be completely discussed.

  5. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.

    2017-03-10

    Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

  6. Thermally induced growth of ZnO nanocrystals on mixed metal oxide surfaces.

    Science.gov (United States)

    Inayat, Alexandra; Makky, Ayman; Giraldo, Jose; Kuhnt, Andreas; Busse, Corinna; Schwieger, Wilhelm

    2014-06-23

    An in situ method for the growth of ZnO nanocrystals on Zn/Al mixed metal oxide (MMO) surfaces is presented. The key to this method is the thermal treatment of Zn/Al layered double hydroxides (Zn/Al LDHs) in the presence of nitrate anions, which results in partial demixing of the LDH/MMO structure and the subsequent crystallization of ZnO crystals on the surface of the forming MMO layers. In a first experimental series, thermal treatment of Zn/Al LDHs with different fractions of nitrate and carbonate in the interlayer space was examined by thermogravimetry coupled with mass spectrometry (TG-MS) and in situ XRD. In a second experimental series, Zn/Al LDHs with only carbonate in the interlayer space were thermally treated in the presence of different amounts of an external nitrate source (NH4NO3). All obtained Zn/Al MMO samples were analysed by electron microscopy, nitrogen physisorption and powder X-ray diffraction. The gas phase formed during nitrate decomposition turned out to be responsible for the formation of crystalline ZnO nanoparticles. Accordingly, both interlayer nitrate and the presence of ammonium nitrate led to the formation of supported ZnO nanocrystals with mean diameters between 100 and 400 nm, and both methods offer the possibility to tailor the amount and size of the ZnO crystals by means of the amount of nitrate. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Rapid growth of nanotubes and nanorods of würtzite ZnO through ...

    Indian Academy of Sciences (India)

    Administrator

    report here on the synthesis of ZnO nanorods and nano- tubes from a ..... Hu Y, Zhou X, Han Q, Cao Q and Huang Y 2003 Mater. Sci. ... Lao J Y, Huang J Y, Wang D Z and Ren Z F 2003 Nano Lett. 3. 235 ... Xing Y J et al 2003 Appl. Phys. Lett.

  8. Carbon doped ZnO: Synthesis, characterization and interpretation

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, J.; Sharma, M.K.; Chattarjee, R.; Singh, S.K.; Varma, Shikha; Behera, S.N.; Nayak, Sanjeev K.; Entel, P.

    2013-01-01

    A novel thermal plasma in-flight technique has been adopted to synthesize nanocrystalline ZnO and carbon doped nanocrystalline ZnO matrix. Transmission electron microscopy (TEM) studies on these samples show the average particle sizes to be around 32 nm for ZnO and for carbon doped ZnO. An enhancement of saturation magnetization in nanosized carbon doped ZnO matrix by a factor of 3.8 has been found in comparison to ZnO nanoparticles at room temperature. Raman measurement clearly indicates the presence of Zn–C complexes surrounded by ZnO matrix in carbon doped ZnO. This indicates that the ferromagnetic signature in carbon doped ZnO arises from the creation of defects or the development of oxy-carbon clusters, in the carbon doped ZnO system. Theoretical studies based on density functional theory also support the experimental analyses. - Highlights: ► Synthesis of nanocrystalline ZnO and carbon doped ZnO matrix by inflight thermal plasma reactor. ► Enhancement of ferromagnetism in nanosized carbon doped ZnO in comparison to ZnO nanoparticles. ► Raman measurement indicates the presence of Zn–C complexes surrounded by ZnO matrix. ► Ferromagnetic signature in carbon doped ZnO arises from the development of oxy-carbon clusters. ► DFT supports experimental evidence of ferromagnetism in C doped ZnO nanoparticles.

  9. Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

    International Nuclear Information System (INIS)

    Allen, M. W.; Zemlyanov, D. Y.; Waterhouse, G. I. N.; Metson, J. B.; Veal, T. D.; McConville, C. F.; Durbin, S. M.

    2011-01-01

    Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K α (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.

  10. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  11. Synthesis and characterization of ZnO nanoparticles for photocatalysis application

    Energy Technology Data Exchange (ETDEWEB)

    Mazzo, Tatiana Martelli; Minervino, Gabriela Bosco; Medalha Filho, Carlos Alberto, E-mail: tatimazzo@gmail.com [Universidade Federal de Sao Paulo (UNIFESP), Baixada Santista, SP (Brazil); Oliveira, Regiane Cristina; Longo, Elson [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil)

    2016-07-01

    Full text: The search for more effective ways to prevent and remedy environmental problems has a strong academic and technological appeal. Based on the study of a variety of compounds, zinc oxide (ZnO) is an excellent candidate for the synthesis of multifunctional nanoparticles due to their potential technological application in various fields [1]. In this work, we were synthesized flowers-like ZnO by coprecipitation and hydrothermal microwave methods. All materials were characterized by X-Ray Diffraction, Micro-Raman spectroscopy and scanning electron microscopy. All XRD patterns correspond to hexagonal structure, which is in agreement with the respective JCPDS card no. 36-1451 for pure ZnO phase with group space group (P63mc) and two molecular formula units per unit cell (Z = 2). Analysis of Micro-Raman spectroscopy showed the presence of vibrational modes in all samples and confirmed the hexagonal ZnO structure. The microscopy images clearly show a change of the morphology of the sample obtained by the co- precipitation method in comparison with those obtained by hydrothermal microwave method. In accordance with the photodegradation the results revealed that the ZnO processed at 140 deg C for 32 minutes have higher photocatalytic efficiency degradation. The Rodamine B dye was completely decolorized at 30 minutes. The pseudo-first order model indicate an increasing in the (k) values with the increase microwave processing time and that improve the ZnO photocatalytic performance. In this work we reported a low-temperature way to prepare the ZnO photocatalytic semiconductor and the results showed a great potential of this material for that application. References: [1] Pearton, S. J; Norton, D. P; et al, Journal of Science and Technology. 22 (2004) 932-948 [2] Kansal, S. K.; Kaur, N. Nanoscale Research Letters 4 (2009) 709-716. (author)

  12. Acceptors in ZnO nanocrystals: A reinterpretation

    Science.gov (United States)

    Gehlhoff, W.; Hoffmann, A.

    2012-12-01

    In a recent article, Teklemichael et al. reported on the identification of an uncompensated acceptor in ZnO nanocrystals using infrared spectroscopy and electron paramagnetic resonance (EPR) in the dark and under illumination. Most of their conclusions, interpretations, and suggestions turned out to be erroneous. The observed EPR signals were interpreted to originate from axial and nonaxial VZn-H defects. We show that the given interpretation of the EPR results is based on misinterpretations of EPR spectra arising from defects in nanocrystals. The explanation of the infrared absorption lines is in conflict with recent results of valence band ordering and valence band splitting.

  13. Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; El-Shaer, A.; Schlenker, E.; Bakin, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Reuss, F.; Kling, R.; Schoch, W.; Limmer, W. [University Ulm, Department of Semiconductor Physics, Ulm (Germany); Ahlers, H.; Siegner, U.; Sievers, S.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Eisenmenger, J.; Mueller, T.; Ziemann, P. [University Ulm, Department of Solid State Physics, Ulm (Germany); Huebel, A.; Denninger, G. [Universitaet Stuttgart, 2. Physkalisches Institut, Stuttgart (Germany)

    2007-07-15

    Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al{sub 2}O{sub 3} substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. (orig.)

  14. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    Science.gov (United States)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

    2012-10-01

    A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10-4 Ω cm with the carrier concentration of 1.65 × 1021 cm-3 and Hall mobility of 11.3 cm2/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  15. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Son, Myoungwoo [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Ham, Moon-Ho [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of); Lee, Woong [School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Surface-textured AZO films were achieved by combining PDMS method with wet etching. Black-Right-Pointing-Pointer The AZO film deposited at 230 Degree-Sign C by PDMS exhibited the best performance. Black-Right-Pointing-Pointer It is due to the higher plasma density supplied from PDMS system. Black-Right-Pointing-Pointer Wet etching of the films produces a crater-like rough surface morphology. - Abstract: A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 Degree-Sign C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 Multiplication-Sign 10{sup -4} {Omega} cm with the carrier concentration of 1.65 Multiplication-Sign 10{sup 21} cm{sup -3} and Hall mobility of 11.3 cm{sup 2}/V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  16. Effect of deposition temperature on the properties of Al-doped ZnO films prepared by pulsed DC magnetron sputtering for transparent electrodes in thin-film solar cells

    International Nuclear Information System (INIS)

    Kim, Doo-Soo; Park, Ji-Hyeon; Shin, Beom-Ki; Moon, Kyeong-Ju; Son, Myoungwoo; Ham, Moon-Ho; Lee, Woong; Myoung, Jae-Min

    2012-01-01

    Highlights: ► Surface-textured AZO films were achieved by combining PDMS method with wet etching. ► The AZO film deposited at 230 °C by PDMS exhibited the best performance. ► It is due to the higher plasma density supplied from PDMS system. ► Wet etching of the films produces a crater-like rough surface morphology. - Abstract: A simple but scalable approach to the production of surface-textured Al-doped ZnO(AZO) films for low-cost transparent electrode applications in thin-film solar cells is introduced in this study by combining pulsed dc magnetron sputtering (PDMS) with wet etching in sequence. First, structural, electrical, and optical properties of the AZO films prepared by a PDMS were investigated as functions of deposition temperature to obtain transparent electrode films that can be used as indium-free alternative to ITO electrodes. Increase in the deposition temperature to 230 °C accompanied the improvement in crystalline quality and doping efficiency, which enabled the lowest electrical resistivity of 4.16 × 10 −4 Ω cm with the carrier concentration of 1.65 × 10 21 cm −3 and Hall mobility of 11.3 cm 2 /V s. The wet etching of the films in a diluted HCl solution resulted in surface roughening via the formation of crater-like structures without significant degradation in the electrical properties, which is responsible for the enhanced light scattering capability required for anti-reflective electrodes in thin film solar cells.

  17. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  18. ZnO nanocrystals and allied materials

    CERN Document Server

    Okada, Tatsuo

    2014-01-01

    ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.

  19. Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal [Centre de Recherche sur la Matiere Divisee, CNRS-Universite d' Orleans, 1b rue de la Ferollerie, 45071 Orleans cedex 2 (France)

    2005-02-01

    One dimensional ZnO nanorods were successfully fabricated on Si substrates via a simple physical vapor-phase transport method at 950 C. A ZnO shell covered Au/Zn alloy is assumed as the nucleation site, then ZnO nanorods grow following a vapor-solid (VS) process. In order to guide the nanorod growth a c-axis oriented ZnO thin film and Au catalyst were first deposited on Si (100) surface. SEM images show nanorods grown on this substrate are vertical to the substrate surface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Nature of ferromagnetic coupling in Cobalt-doped ZnO; Ursache der magnetischen Kopplung in Kobalt-dotiertem ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, K W

    2007-12-12

    Aim of this thesis was on the one hand to produce Co doped ZnO films, which exhibit a ferromagnetic signal and on the other hand to study the cause of the magnetic coupling. For this purpose Zn{sub 0.95}Co{sub 0.05} films wer fabricated by pulsed laser deposition. Three different substrate materials ((0001)ZnO, (0001)Al{sub 2}O{sub 3}, and (0001)ScAlMgO{sub 4}) were applied anf the growth temperature T{sub g} varied between 300 C and 600 C. Furthermore non-transition-metal doped films were grown at T{sub g}=320 C. By means of X-ray diffractometry the samples were studied concerning their structure, phase purity, and mosaicism. In the films on ZnO a foreign phase was detected, which can be explained by metallic Co inclusions. An estimation of the particle sizes yielded diameters between 2.2 nm and 5.4 nm. With SQID magnetometry measurements of the magnetization M were performed in dependence on the magnetic field H and the temperature T. At 300 K in all Co doped samples on ZnO and in samples on Al{sub 2}O{sub 3} and ScAlMgO{sub 4} with T{sub g}<400 C in the M(H) curves a distinct magnetic moment was observed, which cannot be explained by paramagnetic CO{sup 2+}. The magnetization measurements prove the existence of superparamegnetic nanoparticles. By means of high-resolution transmission electron microscopy it was possible to detect the Co inclusions in the Co doped film on ZnO with T{sub g}=500 C. For the Co and the non-transition-metal-doped samples on Al{sub 2}O{sub 3} and ScAlMgO{sub 4} with T{sub g}=320 C the electric trasnport properties were determined in dependence on H and T.

  1. Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol

    International Nuclear Information System (INIS)

    Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

    2014-01-01

    Highlights: • Multi-doped ZnO (M-ZnO) was prepared from Zn-bearing dust for waste-cleaning-waste. • All the dopants M (Fe, Mg, Ca and Al) and Zn are recovered from the dust. • Doping by the dust-derived M expands excitability of ZnO to visible light region. • M-ZnO has good catalytic activity in the degradation of phenol under visible light. - Abstract: A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste “fabric filter dust” by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments

  2. Analysis of surface states in ZnO nanowire field effect transistors

    International Nuclear Information System (INIS)

    Shao, Ye; Yoon, Jongwon; Kim, Hyeongnam; Lee, Takhee; Lu, Wu

    2014-01-01

    Highlights: • The electron transport in ZnO nanowire FETs is space charged limited below a trap temperature. • Metallic contacts to ZnO nanowires exhibit non-linear behavior with a Schottky barrier height of ∼0.35 eV. • The surface state density is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2 . • The trap activation energy is ∼0.26 eV. - Abstract: Nanowires (NWs) have attracted considerable interests for scaled electronic and optoelectronic device applications. However, NW based semiconductor devices normally suffer from surface states due to the existence of dangling bonds or surface reconstruction. Because of their large surface-to-volume ratio, surface states in NWs can easily affect the metallic contacts to NWs and electron transport in NW. Here, we present ZnO NW surface analysis by performing current–voltage characterization on ZnO NW Schottky barrier field effect transistors with different metal contacts (Ti, Al, Au) at both room temperature and cryogenic temperature. Our results show that three metal contacts are all Schottky contacts to ZnO NWs due to surface states. Our further study reveals: (a) the surface states related Schottky barrier height (SBH) can be extracted from a back to back Schottky diodes model and the SBH values are in the range of 0.34–0.37 eV for three metal contacts; (b) the trap activation energy determined from the Arrhenius plots of different Schottky metal contacts is in the range of 0.23–0.29 eV, which is oxygen vacancies related; and (c) based on the space-charge-limited model, the surface state density of ZnO NW is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2

  3. Intrinsic defects in ZnO varistors

    International Nuclear Information System (INIS)

    Mahan, G.D.

    1983-01-01

    Theoretical calculations are presented for equilibrium concentrations of zinc and oxygen vacancies in ZnO. Results are presented at the sintering temperature, and also at room temperature. Theoretical calculations of reaction constants show that the intrinsic donor is the oxygen vacancy, rather than the zinc interstitial. The depletion of vacancies in the surface region, as the ZnO is cooled from the sintering temperature, is also calculated. Homojunction effects which are caused by such depletion are shown to be small

  4. Substrate type < 111 >-Cu{sub 2}O/<0001 >-ZnO photovoltaic device prepared by photo-assisted electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Zamzuri, Mohd, E-mail: zamzuri@tf.me.tut.ac.jp [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); School of Manufacturing Eng., Universiti Malaysia Perlis, Kampus Tetap Pauh Putra, Jln Arau-Changlun, 02600 Arau, Perlis (Malaysia); Sasano, Junji [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan); Mohamad, Fariza Binti [Faculty of Electrical & Electronic Eng., University Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor (Malaysia); Izaki, Masanobu [Department of Mechanical Eng., Toyohashi University of Technology, 1-1 Hibari Gaoka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

    2015-11-30

    The substrate-type < 0001 > ZnO/<111 > Cu{sub 2}O photovoltaic (PV) device has been constructed by electrodeposition of a < 111 >-p-Cu{sub 2}O layer on an Au(111)/Si wafer substrate followed by stacking the n-ZnO layer by electrodeposition during light irradiation in aqueous solutions. The PV device was fabricated by stacking the Al:ZnO-window by sputtering and the top Al electrode by vacuum evaporation. The < 0001 >-ZnO layer was composed of aggregates of hexagonal columnar grains grown in the direction normal to the surface, and pores could be observed between the ZnO grains at the deposition time last 1800 s. The < 0001 >-ZnO/<111 >-Cu{sub 2}O PV device showed a photovoltaic performance under AM1.5 illumination, and showed the improved short-circuit current density of 5.87 mA cm{sup −2} by stacking the AZO-TCO due to the increase in the diffusion length of the carrier. - Highlights: • Substrate type ZnO/Cu{sub 2}O photovoltaic devices only by electrodeposition • ZnO layer was stacked on the Cu{sub 2}O layer by photo-assisted electrodeposition. • AZO/ZnO/Cu{sub 2}O photovoltaic devices with a short-circuit current density of 5.87 mA cm{sup −2}.

  5. Characterization of n and p-type ZnO thin films grown by pulsed filtered cathodic vacuum arc system

    International Nuclear Information System (INIS)

    Kavak, H.; Erdogan, E.N.; Ozsahin, I.; Esen, R.

    2010-01-01

    oxidation zinc nitride the film converted to p-type zinc oxide and the film became more transparent. During the oxidation process at each temperature Hall measurements were made to determine carrier type, carrier concentration, mobility and resistivity. Hall effect measurements indicated that ZnO films were p-type, the reliable results obtained for carrier concentration and mobility. Hall effect measurements proved that after annealing at 350 degrees Celsium up to 500 degrees Celsium the film was p-type. By increasing the oxidation temperature over 550 degrees Celsium the ZnO thin films turned into n-type due to the loss of N atoms in the film. Room temperature photoluminescence measurements were performed to investigate doping and impurity level of these films. The deposited best quality n and p type ZnO thin films were used to produce hetero and homojunctions. p-type ZnO deposited on the n-type Si substrate and aluminum or indium was evaporated as metal contacts (n-p). On the other hand n-type ZnO deposited on p-type Si substrate for p-n structure. In the case of homo-junction both n and p-type ZnO thin films were deposited on glass substrates with Al contacts. Current-Voltage characteristics of these devices were determined and the typical result for p-n hetero-junction was shown here

  6. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  7. Synthesis of 1-D ZnO nanorods and polypyrrole/1-D ZnO ...

    Indian Academy of Sciences (India)

    1-D ZnO nanorods and PPy/1-D ZnO nanocomposites were prepared by the surfactant-assisted precipitation and in situ polymerization method, respectively. The synthesized nanorods and nanocomposites were characterized by UV–Vis spectrophotometer, Fourier transform-infrared spectroscopy (FTIR), X-ray diffraction ...

  8. A Regrowth Method for the Fabrication of High-Quality ZnO Films and Their Application in Fast-Response UV Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Giwoong; Kim, Sungsu; Jo, Euije; Kim, Gyeongjae; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of); Son, Jeong-Sik [Kyungwoon University, Gumi (Korea, Republic of); Kim, Sung-O [Kansas State University, Manhattan (United States)

    2017-07-15

    In this study, we fabricated high-quality ZnO films using hydrothermally grown ZnO nanorods and a spin-coated Al-doped ZnO film by using regrowth method. The photoluminescence (PL) intensity ratios of the near-band-edge (NBE) to deep-level (DL) emission peaks (I{sub NBE}/I{sub DL}) for ZnO nanorods (samples 1) and ZnO film (sample 2) were 2.13 and 24.3, respectively. The redshift from 3.288 (sample 2) to 3.278 eV (sample 1) and low I{sub NBE}/I{sub DL} ratio in PL spectra were attributed to large mismatch between ZnO and Si substrate, resulting in a residual stress and the low optical properties. In case of sample 2, the photocurrent was sharply increased without the exponential rise because of enhanced optical properties of ZnO film by regrowth. The regrowth method is expected to represent a possible route for fast-response ultraviolet sensors.

  9. Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The GaN-based flip-chip white light-emitting diodes (FCWLEDs with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.

  10. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

  11. The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

    KAUST Repository

    Wang, H. H.; Tian, J. S.; Chen, C. Y.; Huang, H. H.; Yeh, Y. C.; Deng, P. Y.; Chang, L.; Chu, Y. H.; Wu, Y. R.; He, Jr-Hau

    2015-01-01

    The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission

  12. Co{sup 2+} adsorption in porous oxides Mg O, Al{sub 2}O{sub 3} and Zn O;Adsorcion de Co{sup 2+} en oxidos porosos MgO, Al{sub 2}O{sub 3} y ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Moreno M, J. E.; Granados C, F. [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Bulbulian, S., E-mail: francisco.granados@inin.gob.m [UNAM, Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Ciudad Universitaria, 04510 Mexico D. F. (Mexico)

    2009-07-01

    The porous oxides Mg O, Al{sub 2}O{sub 3} and Zn O were synthesized by the chemical combustion in solution method and characterized be means of scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. The adsorption behavior of Co{sup 2+} ions present in aqueous solution were studied on the synthesized materials by means of experiments lots type to ambient temperature. It was found that the cobalt ions removal was of 90% in Mg O, 65% in Zn O and 72% in Al{sub 2}O{sub 3} respectively, indicating that the magnesium oxide is the best material to remove Co{sup 2+} presents in aqueous solution. (Author)

  13. Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

    Science.gov (United States)

    He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

    2017-06-01

    In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

  14. Acceptor Type Vacancy Complexes In As-Grown ZnO

    International Nuclear Information System (INIS)

    Zubiaga, A.; Tuomisto, F.; Zuniga-Perez, J.

    2010-01-01

    One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (∼3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, Li Zn and Na Zn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

  15. VLS-grown diffusion doped ZnO nanowires and their luminescence properties

    International Nuclear Information System (INIS)

    Roy, Pushan Guha; Dutta, Amartya; Das, Arpita; Bhattacharyya, Anirban; Sen, Sayantani; Pramanik, Pallabi

    2015-01-01

    Zinc Oxide (ZnO) nanowires were deposited by vapor–liquid–solid (VLS) method on to aluminum doped ZnO (AZO) thin films grown by sol-gel technique. For various device applications, current injection into such nanowires is critical. This is expected to be more efficient for ZnO nanowires deposited on to AZO compared to those deposited on to a foreign substrate such as silicon. In this work we compare the morphological and optical properties of nanowires grown on AZO with those grown under similar conditions on silicon (Si) wafers. For nanowires grown on silicon, diameters around 44 nm with heights around 2.2 μm were obtained. For the growth on to AZO, the diameters were around 90 nm while the heights were around 520 nm. Room temperature photoluminescence (RT-PL) measurements show improved near band-edge emission for nanowires grown on to AZO, indicating higher material quality. This is further established by low temperature photoluminescence (LT-PL) measurements where excitonic transitions with width as small as 14 meV have been obtained at 4 K for such structures. Electron energy loss spectroscopy (EELS) studies indicate the presence of Al in the nanowires, indicating a new technique for introduction of dopants into these structures. These results indicate that ZnO nanowires on sol-gel grown AZO thin films show promise in the development of various optoelectronic devices. (paper)

  16. Acceptor Type Vacancy Complexes In As-Grown ZnO

    Science.gov (United States)

    Zubiaga, A.; Tuomisto, F.; Zuñiga-Pérez, J.

    2010-11-01

    One of the many technological areas that ZnO is interesting for is the construction of opto-electronic devices working in the blue-UV range as its large band gap (˜3.4 eV at 10 K) makes them suitable for that purpose. As-grown ZnO shows generally n-type conductivity partially due to the large concentration of unintentional shallow donors, like H, but impurities can also form complexes with acceptor type defects (Zn vacancy) leading to the creation of compensating defects. Recently, LiZn and NaZn acceptors have been measured and H could form similar type of defects. Doppler Broadening Positron Annihilation spectroscopy experimental results on the observation of Zn related vacancy complexes in ZnO thin films, as-grown, O implanted and Al doped will be presented. Results show that as-grown ZnO film show small Zn vacancy related complexed that could be related to presence of H as a unintentional doping element.

  17. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

    2009-01-01

    The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

  18. Adsorption property of volatile molecules on ZnO nanowires ...

    Indian Academy of Sciences (India)

    7

    Keywords: ZnO; interaction; ammonia; band structure; density of states. 1. 2. 3 .... Virtual NanoLab [18] software was utilized to construct the ZnO nanowires with 24 Zn ..... But in reality, the ZnO NWs shows a better response (80.2) towards NH3.

  19. Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China); Hung, Sung-Po [Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan (China)

    2014-02-15

    Highlights: ► Sb-doped nonpolar a-plane ZnO layers were epitaxially grown on sapphire substrates. ► Crystallinity and electrical properties were studied upon growth condition and doping concentration. ► The out-of-plane lattice spacing of ZnO films reduces monotonically with increasing Sb doping level. ► The p-type conductivity of ZnO:Sb film is closely correlated with annealing condition and Sb doping level. -- Abstract: In this study, the epitaxial growth of Sb-doped nonpolar a-plane (112{sup ¯}0) ZnO thin films on r-plane (11{sup ¯}02) sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was (112{sup ¯}0){sub ZnO}//(11{sup ¯}02){sub Al{sub 2O{sub 3}}} and [11{sup ¯}00]{sub ZnO}//[112{sup ¯}0]{sub Al{sub 2O{sub 3}}}. The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.

  20. Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol.

    Science.gov (United States)

    Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

    2014-08-15

    A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste "fabric filter dust" by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments. Copyright © 2014 Elsevier B.V. All rights reserved.

  1. Control of N/N2 species ratio in NO plasma for p-type doping of ZnO

    International Nuclear Information System (INIS)

    Chen Xingyou; Zhang Zhenzhong; Jiang Mingming; Wang Shuangpeng; Li Binghui; Shan Chongxin; Liu Lei; Zhao Dongxu; Shen Dezhen; Yao Bin

    2011-01-01

    Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2 O 3 ) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux, and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux, and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly.

  2. Effect of co-doping process on topography, optical and electrical properties of ZnO nanostructured

    Science.gov (United States)

    Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Syamsir, S. A.; Khusaimi, Z.; Rusop, M.

    2018-05-01

    We investigated of Undoped ZnO and Magnesium (Mg)-Aluminium (Al) co-doped Zinc Oxide (MAZO) nanostructured films were prepared by sol gel spin coating technique. The surface topography was analyzed using Atomic Force Microscopy (AFM). Based on the AFM results, Root Mean Square (RMS) of MAZO films have rougher surface compared to pure ZnO films. The optical and electrical properties of thin film samples were characterized using Uv-Vis spectroscopy and two point probes, current-voltage (I-V) measurements. The transmittance spectra for both thin samples was above 80% in the visible wavelength. The MAZO film shows the highest conductivity compared to pure ZnO films. This result indicates that the improvement of carrier mobility throughout doping process and possibly contribute by extra ion charge.

  3. Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

    International Nuclear Information System (INIS)

    Hu, Y.M.; Lin, C.W.; Huang, J.C.A.

    2006-01-01

    High-quality (0001) oriented ZnO (300 A) film and [ZnO(100 A)/Al(t Al )] 3 (t Al = 0.6, 1.7, 2.8 A) multilayers have been established at room temperature on Al 2 O 3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 A thin is 1.7 A (about one Al atomic layer) and 400 deg. C, respectively, leading to the relatively lower resistivity (2.8 x 10 -3 Ω cm) and higher Hall mobility (10 cm 2 /V.s) without suppression of the visible transmittance (above 85%)

  4. Evaluation of Alternative Atomistic Models for the Incipient Growth of ZnO by Atomic Layer Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Manh-Hung; Tian, Liang; Chaker, Ahmad; Skopin, Evgenii; Cantelli, Valentina; Ouled, Toufik; Boichot, Raphaël; Crisci, Alexandre; Lay, Sabine; Richard, Marie-Ingrid; Thomas, Olivier; Deschanvres, Jean-Luc; Renevier, Hubert; Fong, Dillon; Ciatto, Gianluca

    2017-03-20

    ZnO thin films are interesting for applications in several technological fields, including optoelectronics and renewable energies. Nanodevice applications require controlled synthesis of ZnO structures at nanometer scale, which can be achieved via atomic layer deposition (ALD). However, the mechanisms governing the initial stages of ALD had not been addressed until very recently. Investigations into the initial nucleation and growth as well as the atomic structure of the heterointerface are crucial to optimize the ALD process and understand the structure-property relationships for ZnO. We have used a complementary suite of in situ synchrotron x-ray techniques to investigate both the structural and chemical evolution during ZnO growth by ALD on two different substrates, i.e., SiO2 and Al2O3, which led us to formulate an atomistic model of the incipient growth of ZnO. The model relies on the formation of nanoscale islands of different size and aspect ratio and consequent disorder induced in the Zn neighbors' distribution. However, endorsement of our model requires testing and discussion of possible alternative models which could account for the experimental results. In this work, we review, test, and rule out several alternative models; the results confirm our view of the atomistic mechanisms at play, which influence the overall microstructure and resulting properties of the final thin film.

  5. Electrical transport properties of single ZnO nanorods

    International Nuclear Information System (INIS)

    Heo, Y.W.; Tien, L.C.; Norton, D.P.; Kang, B.S.; Ren, F.; Gila, B.P.; Pearton, S.J.

    2004-01-01

    Single ZnO nanorods with diameters of ∼130 nm were grown on Au-coated Al 2 O 3 substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were removed from the substrate and placed between Ohmic contact pads and the current-voltage characteristics measured as a function of temperature and gas ambient. In the temperature range from 25 to 150 deg. C, the resistivity of nanorods treated in H 2 at 400 deg. C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used (C 2 H 4 ,N 2 O,O 2 or 10% H 2 in N 2 ). By sharp contrast, the conductivity of nanorods not treated in H 2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors

  6. Electrical characterization of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A.C.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

    2007-05-15

    Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10{sup -5} {omega} cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Photoluminescence properties of Co-doped ZnO nanocrystals

    DEFF Research Database (Denmark)

    Lommens, P.; Smet, P.F.; De Mello Donega, C.

    2006-01-01

    We performed photoluminescence experiments on colloidal, Co -doped ZnO nanocrystals in order to study the electronic properties of Co in a ZnO host. Room temperature measurements showed, next to the ZnO exciton and trap emission, an additional emission related to the Co dopant. The spectral...... position and width of this emission does not depend on particle size or Co concentration. At 8 K, a series of ZnO bulk phonon replicas appear on the Co-emission band. We conclude that Co ions are strongly localized in the ZnO host, making the formation of a Co d-band unlikely. Magnetic measurements...

  8. Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

    International Nuclear Information System (INIS)

    Knoops, Harm C. M.; Loo, Bas W. H. van de; Smit, Sjoerd; Ponomarev, Mikhail V.; Weber, Jan-Willem; Sharma, Kashish; Kessels, Wilhelmus M. M.; Creatore, Mariadriana

    2015-01-01

    In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering phenomena to the mobility, several case studies were analyzed in this work by means of spectroscopic ellipsometry and Fourier transform infrared (IR) spectroscopy. The obtained electrical parameters were compared to the results inferred by Hall measurements. For intrinsic ZnO (i-ZnO), the in-grain mobility was obtained by fitting reflection data with a normal Drude model in the IR range. For Al-doped ZnO (Al:ZnO), besides a normal Drude fit in the IR range, an Extended Drude fit in the UV-vis range could be used to obtain the in-grain mobility. Scattering mechanisms for a thickness series of Al:ZnO films were discerned using the more intuitive parameter “scattering frequency” instead of the parameter “mobility”. The interaction distance concept was introduced to give a physical interpretation to the frequency dependence of the scattering frequency. This physical interpretation furthermore allows the prediction of which Drude models can be used in a specific

  9. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-05-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS. The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm ZnO films evidently showed higher sensor signal and faster response times (within seconds than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  10. Water-assisted nitrogen mediated crystallisation of ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Muydinov, R. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany); Steigert, A. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Schönau, S.; Ruske, F. [Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany); Kraehnert, R.; Eckhardt, B. [Technical University Berlin, Institute of Technical Chemistry, Straße des 17. Juni 124, 10623 Berlin (Germany); Lauermann, I. [Helmholtz-Zentrum Berlin, Institute of Heterogeneous Material Systems, Albert-Einstein-Straße 15, 12489 Berlin (Germany); Szyszka, B. [Technical University Berlin, Institute of Semiconducting- and High-Frequency Technologies, Einsteinufer 25, 10587 Berlin (Germany)

    2015-09-01

    Nitrogen mediated crystallisation (NMC) being performed in oxygen atmosphere at T ≥ 600 °C is an effective approach to obtain very well (00l)-textured ZnO films. A use of NMC-seed layers remarkably improves electrical transport properties of subsequently deposited ZnO:Al contacts. In this work, crystallisation of quasi-amorphous, nitrogen doped ZnO seed layers has been performed using water vapours at overpressure and temperatures around 100 °C. This approach allows employment of soda-lime float-glass or temperature sensitive film stacks as a substrate. We propose here possible mechanism of water-assisted NMC and grope for optimised crystallisation conditions on the basis of optical, microscopic, and textural investigation. Low temperature water-assisted crystallisation of 20 nm thick ZnO layers was compared with high temperature annealing methods in terms of composition, microstructure and crystallinity. Electrical properties such as electron Hall mobility (μ{sub e}), concentration of free electrons (N{sub e}) and sheet resistance (R{sub sh}) have been evaluated and compared for functional ZnO:Al films obtained on glass and on differently crystallised NMC-seed layers. It was found that the crystallised with water assistance at low temperature ZnO seed layers provide comparable improvement in crystallinity and electrical properties of subsequently grown functional ZnO:Al films with respect to the ones crystallised at high temperature. Use of optimised water-assisted crystallisation of seed layers has allowed decreasing R{sub sh} of thin (130–270 nm) functional ZnO:Al films twice compared to the glass substrate. Both provide this effect: increase in μ{sub e} and increase of N{sub e}. - Highlights: • Amorphous ZnO:N films can be crystallised in autoclave at temperatures around 100 °C. • Such water-assisted crystallisation provides well-crystalline ZnO seed layers. • Use of these seed layers resulted in stress-free ZnO:Al contacts with twice lower R

  11. Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

    2015-02-15

    Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

  12. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  13. Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

    DEFF Research Database (Denmark)

    Ma, Huanming; Qin, Zhiwei; Wang, Zaide

    2017-01-01

    ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws wer...

  14. Are Fe and Co implanted ZnO and III-nitride semiconductors magnetic?

    CERN Document Server

    AUTHOR|(CDS)2081284; Bharuth-Ram, Krish

    The chemical nature, lattice site locations and magnetic behaviour of Fe and/or Co ions implanted in nitrides (GaN, AlN, and InN) and in ZnO have been investigated using Mössbauer spectroscopy and vibrating sample magnetometer (VSM) techniques. Mössbauer data on nitride and $^{56}$Fe pre-implanted ZnO samples were obtained from emission Mössbauer spectroscopy (eMS) measurements at the ISOLDE facility, CERN, following the implantation of radioactive $^{57}$Mn$^{*}$ which $\\beta$$^{-}$decays to the 14.4 keV Mössbauer state of $^{57}$Fe. In addition, conversion electron Mössbauer spectroscopy (CEMS) data were collected on ZnO single crystals co-implanted with $^{57}$Fe + $^{56}$Fe and $^{57}$Fe + $^{59}$Co ions in a box profile. Emission Mössbauer spectra obtained for GaN and AlN reveal magnetic structure in the ‘wings’ assigned to high spin Fe$^{3+}$ weakly coupled to the lattice showing spin-lattice relaxation effects. The observed spin-relaxation rate (τ$^{-1}$) closely follows a ${T}^{2}$ temperat...

  15. Spin noise spectroscopy of donor-bound electrons in ZnO

    Science.gov (United States)

    Horn, H.; Balocchi, A.; Marie, X.; Bakin, A.; Waag, A.; Oestreich, M.; Hübner, J.

    2013-01-01

    We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring 67Zn isotope. We measure a typical spin dephasing time of 23 ns, in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.

  16. Magnetoresistance of magnetically doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Behan, A J; Mokhtari, A; Blythe, H J; Fox, A M; Gehring, G A [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M, E-mail: G.A.Gehring@sheffield.ac.u [Division of Superconductivity and Magnetism, University of Leipzig, D-04103, Leipzig (Germany)

    2009-08-26

    Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.

  17. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  18. Aluminium doping induced enhancement of p-d coupling in ZnO

    International Nuclear Information System (INIS)

    Cong, G W; Peng, W Q; Wei, H Y; Liu, X L; Wu, J J; Han, X X; Zhu, Q S; Wang, Z G; Ye, Z Z; Lu, J G; Zhu, L P; Qian, H J; Su, R; Hong, C H; Zhong, J; Ibrahim, K; Hu, T D

    2006-01-01

    Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the O 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and O K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling

  19. Reducing ZnO nanoparticles toxicity through silica coating

    Directory of Open Access Journals (Sweden)

    Sing Ling Chia

    2016-10-01

    Full Text Available ZnO NPs have good antimicrobial activity that can be utilized as agents to prevent harmful microorganism growth in food. However, the use of ZnO NPs as food additive is limited by the perceived high toxicity of ZnO NPs in many earlier toxicity studies. In this study, surface modification by silica coating was used to reduce the toxicity of ZnO NPs by significantly reducing the dissolution of the core ZnO NPs. To more accurately recapitulate the scenario of ingested ZnO NPs, we tested our as synthesized ZnO NPs in ingestion fluids (synthetic saliva and synthetic gastric juice to determine the possible forms of ZnO NPs in digestive system before exposing the products to colorectal cell lines. The results showed that silica coating is highly effective in reducing toxicity of ZnO NPs through prevention of the dissociation of ZnO NPs to zinc ions in both neutral and acidic condition. The silica coating however did not alter the desired antimicrobial activity of ZnO NPs to E. coli and S. aureus. Thus, silica coating offered a potential solution to improve the biocompatibility of ZnO NPs for applications such as antimicrobial agent in foods or food related products like food packaging. Nevertheless, caution remains that high concentration of silica coated ZnO NPs can still induce undesirable cytotoxicity to mammalian gut cells. This study indicated that upstream safer-by-design philosophy in nanotechnology can be very helpful in a product development.

  20. Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Calnan, Sonya [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Riedel, Wiebke; Gledhill, Sophie [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Stannowski, Bernd [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Lux-Steiner, Martha Ch. [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich Physik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Schlatmann, Rutger [Helmholtz-Zentrum für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin (Germany); Fachbereich 1 Ingenieurwissenschaften I, University of Applied Science (HTW) Berlin, Wilhelminenhofstraße 75 A, 12459 Berlin (Germany)

    2015-11-02

    The effect of varying the boron and aluminium content of the starting electrolyte for extrinsically doped ZnO films grown on SnO{sub 2}:F substrates by electrochemical deposition was investigated. The ZnO:B film surface was characterized by grains with mainly hexagonal faces exposed while the exposed faces of the ZnO:Al grains were rectangular. Whereas a B{sup 3+}/Zn{sup 2+} ratio of up to 10 at.% in the electrolyte had no significant effect on the crystalline structure of the ZnO films, an Al{sup 3+}/Zn{sup 2+} ratio above 0.25 at.% increased the disorder in the crystalline structure. All the boron doped films exhibit a strong E{sub 2}-high Raman mode related to wurtzite ZnO structure but this peak was much weaker for ZnO:Al and diminished with increasing Al incorporation in the films. Exposing the films to ultra-violet light reduced their effective sheet resistance from values beyond measurement range to values between 40 and 5000 kΩ/sq for film thicknesses of 200–550 nm. Inspection of the optical spectra near the bandgap edge and the plasma edge in the mid infrared range, showed that the Al-doping resulted in a higher carrier concentration ~ 10{sup 20} cm{sup −3} than B-doping. X-ray electron spectroscopy showed that the dopant efficiency was limited by the absence of dopant atoms near the surface of all the ZnO:B films and of the lightly doped ZnO:Al and, by the formation of aluminium oxide at the surface of the more highly doped ZnO:Al films. - Highlights: • Crystalline ZnO grown by electrochemical deposition. • Comparison of influence of H{sub 3}BO{sub 3} and Al(NO{sub 3}){sub 3} as dopant sources. • Different ZnO crystalline orientation for Al and boron doping. • Film surface chemical composition suppressed electrical conductivity.

  1. ZnO quantum dots–decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    International Nuclear Information System (INIS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-01-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3–5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O–H bond and Zn"2"+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn"2"+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions. (paper)

  2. Herstellung und Charakterisierung von ZnO1-xSx-Dünnschichten : Dotierung mit Wasserstoff und Einsatz in ZnO1-xSx/GaN-Heterostruktur-Leuchtdioden

    OpenAIRE

    Kronenberger, Achim

    2013-01-01

    Das ternäre Materialsystem ZnO1-xSx ist für den Einsatz als Cd-freie Pufferschicht in Solarzellen, für Halbleiter-Heterostrukturen (z.B. Leuchtdioden) oder als Bandkanten-Filter interessant, da sich die energetische Lage von Valenzband-Maximum und Leitungsband-Minimum und somit ebenfalls die Energie der Bandlücke durch die Komposition beeinflussen lassen. Zusätzlich eignet es sich aufgrund der damit einhergehenden Veränderung der elektrischen und phononischen Eigenschaften als Modelsystem für...

  3. Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Qianni Zhang

    2018-01-01

    Full Text Available The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL at a low temperature in inverted organic solar cells (OSCs. However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxide tends to precipitate metal salts due to acid-base neutralization reactions. In this paper, we investigate the inverted OSCs with Al-doped-ZnO ETL made by immersion of metallic Al into the Zn-ammine precursor solution. The effects of ZnO layer with different immersion time of Al on film properties and solar cell performance have been studied. The results show that, with the Al-doped-ZnO ETL, an improvement of the device performance could be obtained compared with the device with the un-doped ZnO ETL. The improved device performance is attributed to the enhancement of charge carrier mobility leading to a decreased charge carrier recombination and improved charge collection efficiency. The fabricated thin film transistors with the same ZnO or AZO films confirm the improved electrical characteristics of the Al doped ZnO film.

  4. Admittance spectroscopy of spray-pyrolyzed ZnO film

    International Nuclear Information System (INIS)

    Kavasoglu, Nese; Kavasoglu, A. Sertap

    2008-01-01

    A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior from grains, grain boundaries, and electrodes of film. Proper equivalent electrical circuit of a ZnO film composed of a single parallel resistor, capacitor, and inductor network connected with a series resistance was proposed. Moreover, we displayed metal-semiconductor transition (MST) in the ZnO film via admittance spectroscopy

  5. Room temperature ferromagnetism in Cu doped ZnO

    Science.gov (United States)

    Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

    2018-05-01

    We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

  6. Optical Properties of ZnO Nanoparticles Capped with Polymers

    Directory of Open Access Journals (Sweden)

    Atsushi Noguchi

    2011-06-01

    Full Text Available Optical properties of ZnO nanoparticles capped with polymers were investigated. Polyethylene glycol (PEG and polyvinyl pyrrolidone (PVP were used as capping reagents. ZnO nanoparticles were synthesized by the sol-gel method. Fluorescence and absorption spectra were measured. When we varied the timing of the addition of the polymer to the ZnO nanoparticle solution, the optical properties were drastically changed. When PEG was added to the solution before the synthesis of ZnO nanoparticles, the fluorescence intensity increased. At the same time, the total particle size increased, which indicated that PEG molecules had capped the ZnO nanoparticles. The capping led to surface passivation, which increased fluorescence intensity. However, when PEG was added to the solution after the synthesis of ZnO nanoparticles, the fluorescence and particle size did not change. When PVP was added to the solution before the synthesis of ZnO nanoparticles, aggregation of nanoparticles occurred. When PVP was added to the solution after the synthesis of ZnO nanoparticles, fluorescence and particle size increased. This improvement of optical properties is advantageous to the practical usage of ZnO nanoparticles, such as bioimaging

  7. Preparation of ZnO nanocrystals via ultrasonic irradiation

    DEFF Research Database (Denmark)

    Qian, D.; Jiang, Jianzhong; Hansen, P. L.

    2003-01-01

    A simple and rapid process has been developed for the preparation of nanometer-sized ZnO crystals via ultrasonic irradiation, by which pure ZnO nanocrystals with an average size of 6 nm and narrow size distribution can be synthesized in a short time and without using any solvents for the precipit......A simple and rapid process has been developed for the preparation of nanometer-sized ZnO crystals via ultrasonic irradiation, by which pure ZnO nanocrystals with an average size of 6 nm and narrow size distribution can be synthesized in a short time and without using any solvents...

  8. Piezoelectric constants for ZnO calculated using classical polarizable core-shell potentials

    International Nuclear Information System (INIS)

    Dai Shuangxing; Dunn, Martin L; Park, Harold S

    2010-01-01

    We demonstrate the feasibility of using classical atomistic simulations, i.e. molecular dynamics and molecular statics, to study the piezoelectric properties of ZnO using core-shell interatomic potentials. We accomplish this by reporting the piezoelectric constants for ZnO as calculated using two different classical interatomic core-shell potentials: that originally proposed by Binks and Grimes (1994 Solid State Commun. 89 921-4), and that proposed by Nyberg et al (1996 J. Phys. Chem. 100 9054-63). We demonstrate that the classical core-shell potentials are able to qualitatively reproduce the piezoelectric constants as compared to benchmark ab initio calculations. We further demonstrate that while the presence of the shell is required to capture the electron polarization effects that control the clamped ion part of the piezoelectric constant, the major shortcoming of the classical potentials is a significant underprediction of the clamped ion term as compared to previous ab initio results. However, the present results suggest that overall, these classical core-shell potentials are sufficiently accurate to be utilized for large scale atomistic simulations of the piezoelectric response of ZnO nanostructures.

  9. Polarity in GaN and ZnO: Theory, measurement, growth, and devices

    Science.gov (United States)

    Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

    2016-12-01

    The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

  10. Ab initio investigation on the magnetic ordering in Gd doped ZnO

    KAUST Repository

    Bantounas, Ioannis; Goumri-Said, Souraya; Benali Kanoun, Mohammed; Manchon, Aurelien; Roqan, Iman S.; Schwingenschlö gl, Udo

    2011-01-01

    The current study investigates the magnetic properties of the Gdx Zn1−xO, with x=0.0625 and 0.0185, dopedsemiconductor using the full potential (linearized) augmented plane wave plus local orbital method. We show that in contrast to the findings of Shi et al. [J. Appl. Phys. 106, 023910 (2009)], the implementation of the Hubbard U parameter to the Gd f states favors an antiferromagnetic phase in both wurtzite GdO and Gdx Zn1−xO. Spin polarized calculations on Gdx Zn1−xO indicate that, even if a ferromagnetic ground state were favored, the magnetic influence of Gd in a perfect ZnO wurtzite lattice is highly localized and limited to the first three nearest neighboring O atoms. Increasing the supercell size and thus diluting the concentration of Gd within the ZnO matrix does not show any changes in the net magnetic moment between these three O atoms nor in the remaining lattice sites, indicating that sizing effects do not influence the range of matrix polarization. We conclude that the localized Gd induced polarization can not account for long range magnetic ordering in a defect-free ZnO wurtzite lattice.

  11. Ab initio investigation on the magnetic ordering in Gd doped ZnO

    KAUST Repository

    Bantounas, Ioannis

    2011-04-22

    The current study investigates the magnetic properties of the Gdx Zn1−xO, with x=0.0625 and 0.0185, dopedsemiconductor using the full potential (linearized) augmented plane wave plus local orbital method. We show that in contrast to the findings of Shi et al. [J. Appl. Phys. 106, 023910 (2009)], the implementation of the Hubbard U parameter to the Gd f states favors an antiferromagnetic phase in both wurtzite GdO and Gdx Zn1−xO. Spin polarized calculations on Gdx Zn1−xO indicate that, even if a ferromagnetic ground state were favored, the magnetic influence of Gd in a perfect ZnO wurtzite lattice is highly localized and limited to the first three nearest neighboring O atoms. Increasing the supercell size and thus diluting the concentration of Gd within the ZnO matrix does not show any changes in the net magnetic moment between these three O atoms nor in the remaining lattice sites, indicating that sizing effects do not influence the range of matrix polarization. We conclude that the localized Gd induced polarization can not account for long range magnetic ordering in a defect-free ZnO wurtzite lattice.

  12. Sodium doping in ZnO crystals

    Science.gov (United States)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

  13. Sodium doping in ZnO crystals

    International Nuclear Information System (INIS)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

  14. Sodium doping in ZnO crystals

    Energy Technology Data Exchange (ETDEWEB)

    Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

    2015-01-12

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

  15. Improving ultraviolet photodetection of ZnO nanorods by Cr doped ZnO encapsulation process

    Science.gov (United States)

    Safa, S.; Mokhtari, S.; Khayatian, A.; Azimirad, R.

    2018-04-01

    Encapsulated ZnO nanorods (NRs) with different Cr concentration (0-4.5 at.%) were prepared in two different steps. First, ZnO NRs were grown by hydrothermal method. Then, they were encapsulated by dip coating method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy, and ultraviolet (UV)-visible spectrophotometer analyses. XRD analysis proved that Cr incorporated into the ZnO structure successfully. Based on optical analysis, band gap changes in the range of 2.74-3.84 eV. Finally, UV responses of all samples were deeply investigated. It revealed 0.5 at.% Cr doped sample had the most photocurrent (0.75 mA) and photoresponsivity (0.8 A/W) of all which were about three times greater than photocurrent and photoresponsivity of the undoped sample.

  16. Photoluminescence lineshape of ZnO

    Directory of Open Access Journals (Sweden)

    Bruno Ullrich

    2014-12-01

    Full Text Available The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques.

  17. Spin noise spectroscopy of ZnO

    Science.gov (United States)

    Horn, H.; Berski, F.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.; Hübner, J.; Oestreich, M.

    2013-12-01

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  18. Spin noise spectroscopy of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Horn, H.; Berski, F.; Hübner, J.; Oestreich, M. [Institute for Solid State Physics, Leibniz Universität Hannover, Appelstr. 2, 30167 Hannover (Germany); Balocchi, A.; Marie, X. [INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Av. de Rangueil, 31077 Toulouse (France); Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig (Germany)

    2013-12-04

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  19. Ultrasonic synthesis of fern-like ZnO nanoleaves and their enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Ma, Qing Lan; Xiong, Rui; Zhai, Bao-gai; Huang, Yuan Ming

    2015-01-01

    Graphical abstract: - Highlights: • Fern-like ZnO nanoleaves were synthesized by ultrasonicating Zn microcrystals in water. • A fern-like ZnO nanoleaf is a self-assembly of ZnO nanoplates along one ZnO nanorod. • Fern-like ZnO nanoleaves exhibit enhanced photocatalytic activity than ZnO nanocrystals. • The branched hierarchical structures are responsible for the enhanced photocatalytic activity. - Abstract: Two-dimensional fern-like ZnO nanoleaves were synthesized by ultrasonicating zinc microcrystals in water. The morphology, crystal structure, optical property and photocatalytic activity of the fern-like ZnO nanoleaves were characterized with scanning electron microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence spectroscopy and ultraviolet–visible spectroscopy, respectively. It is found that one fern-like ZnO nanoleaf is composed of one ZnO nanorod as the central trunk and a number of ZnO nanoplates as the side branches in opposite pairs along the central ZnO nanorod. The central ZnO nanorod in the fern-like nanoleaves is about 1 μm long while the side-branching ZnO nanoplates are about 100 nm long and 20 nm wide. Further analysis has revealed that ZnO nanocrystals are the building blocks of the central ZnO nanorod and the side-branching ZnO nanoplates. Under identical conditions, fern-like ZnO nanoleaves exhibit higher photocatalytic activity in photodegrading methyl orange in aqueous solution than spherical ZnO nanocrystals. The first-order photocatalytic rate constant of the fern-like ZnO nanoleaves is about four times as large as that of the ZnO nanoparticles. The branched architecture of the hierarchical nanoleaves is suggested be responsible for the enhanced photocatalytic activity of the fern-like ZnO nanoleaves

  20. Anodized ZnO nanostructures for photoelectrochemical water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2016-01-01

    Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

  1. Low-temperature processed ZnO and CdS photodetectors deposited by pulsed laser deposition

    International Nuclear Information System (INIS)

    Hernandez-Como, N; Moreno, S; Mejia, I; Quevedo-Lopez, M A

    2014-01-01

    UV-VIS photodetectors using an interdigital configuration, with zinc oxide (ZnO) and cadmium sulfide (CdS) semiconductors deposited by pulsed laser deposition, were fabricated with a maximum processing temperature of 100 °C. Without any further post-growth annealing, the photodetectors are compatible with flexible and transparent substrates. Aluminum (Al) and indium tin oxide (ITO) were investigated as contacts. Focusing on underwater communications, the impact of metal contact (ITO versus Al) was investigated to determine the maximum responsivity using a laser with a 405 nm wavelength. As expected, the responsivity increases for reduced metal finger separation. This is a consequence of reduced carrier transit time for shorter finger separation. For ITO, the highest responsivities for both films (ZnO and CdS) were ∼3 A W −1 at 5 V. On the other hand, for Al contacts, the maximum responsivities at 5 V were ∼0.1 A W −1 and 0.7 A W −1 for CdS and ZnO, respectively. (paper)

  2. Assessing Germination Response of Wheat and Wild Oat to Different Levels of ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ehsan Zeidali

    2018-02-01

    variations within a species are essential for seedling establishment at different habitats (Grundy et al., 1996. Germination of various plants has a different response to nanoparticles. Application of nanoparticles that have a positive effect on germination and growth of crop and a negative effect on weed can be useful in weed control. Materials and Methods: In order to study the effect of different concentrations of ZnO on germination characteristics of wild oat and two genotypes of wheat, an experiment was conducted with a factorial arrangement based on completely randomized design with four replications in research laboratory of Ilam University. The experimental treatments were plant genotypes (wild oat and Behrang and Sivand genotypes of wheat and different concentrations of ZnO (0, 10, 100 and 500 ppm. Germination of seeds was determined by placing 30 seed in a 9-cm-diam Petri dish containing two layers of Whatman No. 1 filter paper, moistened with 5 ml of distilled water or a treatment solution. The treatments of ZnO were applied in Agar complex. After treatment, the dishes were sealed with paraffin tape, and placed in the dark in an incubator at 25 °C. The number of seeds germinated was counted every day. Seedling and radicle length, seedling and radicle dry weight and germination rate were measured. Data were subjected to two-way analysis of variance (ANOVA and the difference between treatment means was separated using Duncan test. A significance level of 95% was applied by SAS 9.2. Results and Discussion: The results showed that the simple and interaction effects of genotype and ZnO had a significant effect (P ≤ 0.01 on all studied traits. The plumule length of both wheat genotypes was increased to 100 ppm ZnO concentration and then was decreased. The plumule length of oat wild was increased by increasing ZnO concentration. Increase in ZnO concentration to 10 ppm caused a significant increment in the radical length of sivand genotype and wild oat, and the trait

  3. Positron annihilation spectroscopy: Applications to Si, ZnO, and multilayer semiconductor structures

    Science.gov (United States)

    Schaffer, J. P.; Rohatgi, A.; Dewald, A. B.; Frost, R. L.; Pang, S. K.

    1989-11-01

    The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors is demonstrated for Si, ZnO, and multilayer structures, such as an AlGaAs/GaAs solar cell. The types of defects discussed include: i) vacancy complexes, oxygen impurities and dopants, ii) the influence of cooling rates on spatial non-uniformities in defects, and iii) characterization of buried interfaces. In sev-eral instances, the results of the PAS investigations are correlated with data from other established semiconductor characterization techniques.

  4. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  5. Thermoelectric effect in nano-scaled lanthanides doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Otal, E H; Canepa, H R; Walsoee de Reca, N E [Centro de Investigacion en Solidos, CITEFA, San Juan Bautista de La Salle 4397 (B1603ALO) Villa Martelli, Buenos Aires (Argentina); Schaeuble, N; Aguirre, M H, E-mail: canepa@citefa.gov.a, E-mail: myriam.aguirre@empa.c [Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Testing and Research, Ueberlandstrasse 129, CH-8600 Duebendorf (Switzerland)

    2009-05-01

    Start Nano-scaled ZnO with 1% Er doping was prepared by soft chemistry methods. The synthesis was carried out in anhydrous polar solvent to achieve a crystal size of a few nanometers. Resulting particles were processed as precipitates or multi layer films. Structural characterization was evaluated by X-Ray diffraction and transmission and scanning electron microscopy. In the case of films, UV-Vis characterization was made. The thermoelectrical properties of ZnO:Er were evaluated and compared with a typical good thermoelectric material ZnO:Al. Both materials have also shown high Seebeck coefficients and they can be considered as potential compounds for thermoelectric conversion.

  6. ALS Association

    Science.gov (United States)

    ... toward a world without ALS! Walk to Defeat ALS® Walk to Defeat ALS® draws people of all ... We need your help. I Will Advocate National ALS Registry The National ALS Registry is a congressionally ...

  7. Photoluminescent ZnO Nanoparticles and Their Biological Applications

    Directory of Open Access Journals (Sweden)

    Zheng-Yong Zhang

    2015-05-01

    Full Text Available During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.

  8. Variable range hopping in ZnO films

    Science.gov (United States)

    Ali, Nasir; Ghosh, Subhasis

    2018-04-01

    We report the variable range hopping in ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. It has been found that Mott variable range hopping dominant over Efros variable range hopping in all ZnO films. It also has been found that hopping distance and energy increases with increasing oxygen partial pressure.

  9. Photochemical events during photosensitization of colloidal ZnO ...

    Indian Academy of Sciences (India)

    The photosensitization of colloidal ZnO nanoparticles with riboflavin (RF) was investigated using absorption, fluorescence spectroscopic measurements and time resolved fluorescence measurements. Riboflavin adsorbed strongly on the surface of ZnO nanoparticles. Apparent association constant was obtained from the ...

  10. Fast synthesize ZnO quantum dots via ultrasonic method.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. Ultrasonic-assisted fabrication of superhydrophobic ZnO nanowall ...

    Indian Academy of Sciences (India)

    The results suggested that the synergistic effect of the aluminium oxide seed layer and sonochemical process can enable the formation of ZnO nanowall structures favourable for superhydrophobic property. A possible growth mechanism of ZnO nanowalls formation during sonication process has been discussed in detail.

  12. Control of N/N{sub 2} species ratio in NO plasma for p-type doping of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chen Xingyou [Key Laboratory of Excited State Processes and Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang Zhenzhong; Jiang Mingming; Wang Shuangpeng; Li Binghui; Shan Chongxin; Liu Lei; Zhao Dongxu; Shen Dezhen [Key Laboratory of Excited State Processes and Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130033 (China); Yao Bin [State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023 (China)

    2011-09-01

    Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al{sub 2}O{sub 3}) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux, and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux, and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly.

  13. Hybrid ZnO:polymer bulk heterojunction solar cells from a ZnO precursor

    NARCIS (Netherlands)

    Beek, W.J.E.; Slooff, L.H.; Wienk, M.M.; Kroon, J.M.; Janssen, R.A.J.; Kafafi, Z.H.

    2005-01-01

    We describe a simple and new method to create hybrid bulk heterojunction solar cells consisting of ZnO and conjugated polymers. A gel-forming ZnO precursor, blended with conjugated polymers, is converted into crystalline ZnO at temperatures as low as 110 °C. In-situ formation of ZnO in MDMO-PPV

  14. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

  15. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)

    2013-12-15

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.

  16. Familial ALS

    Science.gov (United States)

    Boylan, Kevin

    2015-01-01

    Synopsis Genes linked to ALS susceptibility are being identified at an increasing rate owing to advances in molecular genetic technology. Genetic mechanisms in ALS pathogenesis appear to exert major effects in ~10% of patients, but genetic factors at some level may be important components of disease risk in most ALS patients. Identification of gene variants associated with ALS has informed concepts of the pathogenesis of ALS, aided the identification of therapeutic targets, facilitated research to develop new ALS biomarkers, and supported the establishment of clinical diagnostic tests for ALS-linked genes. Translation of this knowledge to ALS therapy development is ongoing. PMID:26515623

  17. Photocatalysis and Bandgap Engineering Using ZnO Nanocomposites

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Johar

    2015-01-01

    Full Text Available Nanocomposites have a great potential to work as efficient, multifunctional materials for energy conversion and photoelectrochemical reactions. Nanocomposites may reveal more improved photocatalysis by implying the improvements of their electronic and structural properties than pure photocatalyst. This paper presents the recent work carried out on photoelectrochemical reactions using the composite materials of ZnO with CdS, ZnO with SnO2, ZnO with TiO2, ZnO with Ag2S, and ZnO with graphene and graphene oxide. The photocatalytic efficiency mainly depends upon the light harvesting span of a material, lifetime of photogenerated electron-hole pair, and reactive sites available in the photocatalyst. We reviewed the UV-Vis absorption spectrum of nanocomposite and photodegradation reported by the same material and how photodegradation depends upon the factors described above. Finally the improvement in the absorption band edge of nanocomposite material is discussed.

  18. Processing of ZnO nanocrystals by solochemical technique

    International Nuclear Information System (INIS)

    Gusatti, M.; Speckhahn, R.; Silva, L.A.; Rosario, J.A.; Lima, R.B.; Kuhnen, N.C.; Riella, H.G.; Campos, C.E.M.

    2009-01-01

    In the present work, we report the synthesis of high quality ZnO nanocrystals by solochemical technique. This synthetic strategy has been shown to have advantages over other methods of producing nanostructures in terms of low cost, efficiency, simplicity and uniformity of crystal structure. Zinc chloride solution at room temperature was mixed with sodium hydroxide solution at 50°C to produce ZnO nanocrystals. Transmission electronic microscopy (TEM) and X-ray powder diffraction (XRD) were used to characterize the ZnO nanocrystals obtained. The structure of ZnO was refined by the Rietveld Method from X-ray diffraction data. These methods showed that the product consisted of pure ZnO nanocrystals and has, predominantly, a rod-like morphology. (author)

  19. Power-dependent photocatalytic activity of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chun, So Yeon; Han, Noh Soo; Jeong, Seong Hyun; Park, Seung Min; Song, Jae Kyu [Dept. of Chemistry, Kyung Hee University, Seoul (Korea, Republic of); Moon, Cheol Joo; Choi, Myong Yong [Dept. of Chemistry (BK21) and Research Institute of Natural Science, Gyeongsang NationalUniversity, Jinju (Korea, Republic of)

    2017-03-15

    the power-dependent photocatalytic activity of ZnO was examined for the photoreduction processes of Rh101 and AN in the presence of hole scavengers, where the fluorescence spectra were measured as a function of irradiation time and excitation intensity. The concentration of the reactants decreased, while the concentration of the products increased accordingly, which indicated the single-electron reduction process by electrons supplied from the conduction band of ZnO. Despite the single-electron process, the efficiency of the photoreaction depended nonlinearly on the excitation intensity, which was explained by the saturation of defect states in ZnO. The enhanced ratio of available electrons in ZnO led to a superlinear increase in the photoreduction efficiency, while the single-electron process linearly reflected the electrons available in ZnO.

  20. Preparation of ZnO-Al2O3 Particles in a Premixed Flame

    DEFF Research Database (Denmark)

    Jensen, Joakim Reimer; Johannessen, Tue; Wedel, Stig

    2000-01-01

    Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement...... temperature and a decreasing precursor vapour pressure. The combustion of precursor mixtures leads to composite particles consisting of zinc aluminate ZnAl2O4 intermixed with either ZnO or Al2O3 phases. The zinc aluminate particles are dendritic aggregates, resembling the alumina particles, and are evidently...... synthesized to the full extent allowed by the overall precursor composition. The addition of even small amounts of alumina to ZnO increases the specific surface area of the composites significantly, for e.g. zinc aluminate particles to approximately 150 m2/g. The gas-to-particle conversion is initiated...

  1. Improved photoluminescence property of CTAB assisted polyaniline-AlZnO nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, Mousumi; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata (India); Ganguly, Saibal [Chemical Engineering department, Universiti Teknology Petronas, Tronoh (Malaysia)

    2015-06-24

    Polyaniline-Al doped ZnO ((PANI-AlZnO:: 70:30) nanocomposite was prepared via in situ chemical oxidative polymerization, while the hexagonal powder of AlZnO was synthesized via sol-gel technique, using Hexadecyltrimethylammonium bromide (CTAB) as a capping agent. The prepared nanocomposite was characterized by High resolution transmission electron microscopy (HRTEM), EDAX, X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectra. The optical property of the nanomaterials is examined by photoluminescence (PL) spectra analysis. The XRD pattern confirms the formation of Al doped ZnO as well as PANI. The HRTEM images of the composite showed the formation of hexagonal AlZnO embedded in polyaniline matrix. EDAX spectrum shows the compositional analysis of the nanocomposite. FTIR spectra confirm the formation of nanocomposite of PANI and hexagonal AlZnO. The PL intensity of the nanocomposite is improved as compared to pure AlZnO.

  2. Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

    Science.gov (United States)

    Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

    2013-08-19

    Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

  3. Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Zafar Hussain Ibupoto

    2013-08-01

    Full Text Available Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD and field emission scanning electron microscopy (FESEM techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002 peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

  4. Trioctylphosphine-assisted morphology control of ZnO nanoparticles

    Science.gov (United States)

    Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung

    2018-06-01

    This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.

  5. Morphological transition of ZnO nanostructures influenced by magnesium doping

    International Nuclear Information System (INIS)

    Premkumar, T.; Zhou, Y.S.; Gao, Y.; Baskar, K.; Jiang, L.; Lu, Y.F.

    2012-01-01

    Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E 2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.

  6. Size dependent emission stimulation in ZnO nanosheets

    International Nuclear Information System (INIS)

    Torchynska, T.V.; El Filali, B.

    2014-01-01

    Photoluminescence (PL), X ray diffraction (XRD) and Raman scattering have been studied in crystalline ZnO nanosheets (NSs) of different sizes, estimated by scanning electronic microscopy (SEM). ZnO NSs with the size from the range of 60–600 nm were created by the electrochemical (anodization) method and followed thermal annealing at 400 °C for 2 h in ambient air. XRD study confirms the wurtzite structure of ZnO NSs and has revealed that the lattice parameters increase monotonically with decreasing NS sizes. Simultaneously the intensity of a set of Raman peaks increases and Raman peaks shift into the low energy range. The surface phonon has been detected in smallest size ZnO NSs. Two types of PL bands deal with a set of phonon replicas of free excitons and the defect related emission have been detected in ZnO NSs. The intensity enhancement of exciton- and defect-related PL bands with decreasing ZnO NS sizes has been detected. The intensity stimulation of exciton-related PL bands is attributed to the realization of the week confinement and the exciton-light coupling with the formation of polariton in small size ZnO NSs of 67–170 nm. The intensity rising of defect-related PL bands is attributed to the concentration enlargement of surface defects when the surface to volume ration increases at decreasing ZnO NS sizes. Numerical simulations of radiative lifetimes and exciton radiative recombination rates in ZnO NSs for different emission wavelengths have been done using the exciton-light coupling model. Then the experimental and numerically simulated PL results have been compared and discussed. - Highlights: • Optical and structural investigations of the ZnO nanosheets with the sizes 60–600 nm. • The enlargement of interplanar distances in the wurtzite ZnO crystal lattice is detected. • The change of optic phonon energy and surface phonon appearing are reveled. • ZnO emission stimulation at the week confinement and electron-light coupling with the

  7. Nanostructured porous ZnO film with enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Wang Lina; Zheng Yingying; Li Xiaoyun; Dong Wenjun; Tang Weihua; Chen Benyong; Li Chaorong; Li Xiao; Zhang Tierui

    2011-01-01

    Well-defined ZnO nanostructured films have been fabricated directly on Zn foil via hydrothermal synthesis. During the fabrication of the ZnO nanostructured films, the Zn foil serves as the Zn source and also the substrate. Porous nanosheet-based, nanotube-based and nanoflower-based ZnO films can all be easily prepared by adjusting the alkali type, reaction time and reaction temperature. The composition, morphology and structure of ZnO films are characterized by X-ray diffraction, scanning electron microscope and high-resolution transmission electron microscope. The porous ZnO nanosheet-based film exhibits enhanced photocatalytic activity in the degradation of Rhodamine B under UV light irradiation. This can be attributed to the high surface area of the ZnO nanosheet and the large percentage of the exposed [001] facet. Moreover, the self-supporting, recyclable and stable ZnO photocatalytic film can be readily recovered and potentially applied for pollution disposal.

  8. Polarized Raman scattering of single ZnO nanorod

    International Nuclear Information System (INIS)

    Yu, J. L.; Lai, Y. F.; Wang, Y. Z.; Cheng, S. Y.; Chen, Y. H.

    2014-01-01

    Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A 1 (TO), E 1 (TO), and E 2 high in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A 1 (TO) and E 1 (TO) phonon modes normalized to that of the E 2 high phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer

  9. Measurement of ZnO/Al2O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy

    International Nuclear Information System (INIS)

    Lei Hong-Wen; Zhang Hong; Wang Xue-Min; Zhao Yan; Yan Da-Wei; Jiang Zhong-Qian; Yao Gang; Zeng Ti-Xian; Wu Wei-Dong

    2013-01-01

    ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy. The band offsets of the ZnO/Al 2 O 3 heterojunction are studied by in situ x-ray photoelectron spectroscopy. The valence band of Al 2 O 3 is found to be 3.59±0.05eV below that of ZnO. Together with the resulting conduction band offset of 2.04±0.05eV, this indicates that a type-I staggered band line exists at the ZnO/Al 2 O 3 heterojunction

  10. Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

    KAUST Repository

    Lin, S S

    2009-08-18

    Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

  11. Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Zhang Jian; Yang Hui; Zhang Qilong; Dong Shurong; Luo, J. K.

    2013-01-01

    ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10 3 , better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

  12. Characterization of Optic Properties ZnO:Al Thin Film on Glass Substrate for Solar Cell Window

    International Nuclear Information System (INIS)

    Wiryoadi; Yunanto; Bambang Siswanto; Sri Sulamdari; Sudjatmoko

    2002-01-01

    It has been characterized a ZnO:Al thin film growth using sputtering technique for solar cell window. The aims of this research is to get a ZnO:Al thin film that can be used as a TCO (Transparent Conducting Oxide) on amorphous silicon solar cell. To get an optimum properties, deposition process has been done for various parameters, such as composition/concentration of Al, substrate temperature, gas pressure and deposition time. Based on experiments result, it is found that the optimum result was achieved at temperature 450 o C, gas pressure 6 x 10 -2 torr and time 1.5 hours. From optical properties (transmittance) measurements using UV-vis, it was found that the optimum results was achieved at temperature 450 o C. At this conditions, wave length (500 - 800) nm, the transmittance was (50 - 82) %, at pressure 6 x 10 -2 torr the transmittance was (50 - 80) % and at deposition time 1.5 hours was (49 - 81) %. For ZnO thin film, was at wave length (500 - 800) nm, the transmittance was (78 - 80) %. From micro structure analysis using SEM, it was found that the thickness layer of ZnO was 1.5 μm and 1.3 μm for ZnO: Al. While from surface morphology it was found that for ZnO thin layer the grains was distributed homogeneously, while for ZnO: Al the grains was distributed unhomogeneously. (author)

  13. Hierarchical structures of ZnO spherical particles synthesized solvothermally

    Science.gov (United States)

    Saito, Noriko; Haneda, Hajime

    2011-12-01

    We review the solvothermal synthesis, using a mixture of ethylene glycol (EG) and water as the solvent, of zinc oxide (ZnO) particles having spherical and flower-like shapes and hierarchical nanostructures. The preparation conditions of the ZnO particles and the microscopic characterization of the morphology are summarized. We found the following three effects of the ratio of EG to water on the formation of hierarchical structures: (i) EG restricts the growth of ZnO microcrystals, (ii) EG promotes the self-assembly of small crystallites into spheroidal particles and (iii) the high water content of EG results in hollow spheres.

  14. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  15. Oriented ZnO nanostructures and their application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Man, Minh Tan [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of); Kim, Ji-Hee [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Sungkyunkwan University (SKKU), Suwon, 16419 (Korea, Republic of); Jeong, Mun Seok [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 16419 (Korea, Republic of); Do, Anh-Thu Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Caugiay, Hanoi (Viet Nam); Lee, Hong Seok, E-mail: hslee1@jbnu.ac.kr [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of)

    2017-05-15

    We report a chemical bath deposition approach for the preparation of large arrays of oriented ZnO nanostructures by activated substrate processes, and precipitated ZnO nanorods by passive occupation of the crystal surface. Photoluminescence dynamics showed that various visible emission characteristics associated with defects such as oxygen vacancy, zinc interstitial or their complexes. In addition, the precipitated ZnO nanorods exhibited excellent performance in the adsorption and photocatalytic decomposition of organic dyes, achieving 95% photodegradation of Rhodamine 6B. Moreover, oxygen defects function as trap sites with strong adsorption abilities towards organic dyes and showed high performance in the photocatalytic degradation of the dye molecules.

  16. ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, D.J. [Nanovation SARL, Orsay (France); Technical Univ. of Troyes (France); CNRS, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Largeteau, A.; Demazeau, G. [ICMCB-CNRS, Bordeaux 1 University (Science and Technology), Pessac (France); Moisson, C.; Turover, D. [Novasic, Savoie Technolac, Arche Bat. 4, BP 267, Le Bourget du Lac (France); Nause, J. [Cermet Inc., Atlanta, GA (United States); Garry, G. [Thales Research, Domaine de Corbeville, Orsay (France); Kling, R.; Gruber, T. [Ulm University, Department of Semiconductor Physics, Ulm (Germany); Waag, A. [Braunschweig Technical University, Institute of Semiconductor Technology, Braunschweig (Germany); Jomard, F.; Galtier, P.; Lusson, A. [LPSC-CNRS, Meudon (France); Monteiro, T.; Soares, M.J.; Neves, A.; Carmo, M.C.; Peres, M. [University of Aveiro, Physics Department, Aveiro (Portugal); Lerondel, G.; Hubert, C. [Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, Troyes (France)

    2007-07-15

    2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) {omega} scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Aa. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) {omega} and 2{theta}/{omega} WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2{theta}/{omega} scan. It was suggested that the improvement in XRD response relative to the substrate might be due to ''healing'' of sub-surface polishing damage due to the elevated T{sub s} used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. (orig.)

  17. Energy conversion from aluminium and phosphate rich solution via ZnO activation of aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Slaughter, Gymama, E-mail: gslaught@umbc.edu; Sunday, Joshua; Stevens, Brian

    2015-08-01

    Electrochemical power sources have motivated intense research efforts in the development of alternative ‘green’ power sources for ultra-low powered bioelectronic devices. Biofuel cells employ immobilized enzymes to convert the available chemical energy of organic fuels directly into electricity. However, biofuel cells are limited by short lifetime due to enzyme inactivation and frequent need to incorporate mediators to shuttle electrons to the final electron acceptor. In this context, other electrochemical power sources are necessary in energy conversion and storage device applications. Here we report on the fabrication and characterization of a membrane-free aluminium/phosphate cell based on the activation of aluminium (Al) using ZnO nanocrystal in an Al/phosphate cell as a ‘green’ alternative to the traditional enzymatic biofuel cells. The hybrid cell operates in neutral phosphate buffer solution and physiological saline buffer. The ZnO modifier in the phosphate rich electrolyte activated the pitting of Al resulting in the production of hydrogen, as the reducing agent for the reduction of H{sub 2}PO{sub 4}{sup −} ions to HPO{sub 3}{sup 2−} ions at a formal potential of −0.250 V vs. Ag/AgCl. Specifically, the fabricated cell operating in phosphate buffer and physiological saline buffer exhibit an open-circuit voltage of 0.810 V and 0.751 V and delivered a maximum power density of 0.225 mW cm{sup −2} and 1.77 mW cm{sup −2}, respectively. Our results demonstrate the feasibility of generating electricity by activating Al as anodic material in a hybrid cell supplied with phosphate rich electrolyte. Our approach simplifies the construction and operation of the electrochemical power source as a novel “green” alternative to the current anodic substrates used in enzymatic biofuel cells for low power bioelectronics applications. - Graphical abstract: Display Omitted - Highlights: • ZnO activation of metallic Al for generating electricity for

  18. ZNO and AG-ZNO crystals: synthesis, characterization, and application in heterogeneous photocatalysis

    Directory of Open Access Journals (Sweden)

    Adriana Campano Lucilha

    2016-05-01

    Full Text Available ZnO and Ag-ZnO were synthesized in a simple and efficient manner by thermal decomposition of zinc oxalate and silver/zinc mixed oxalate. The influence of the addition of metallic silver on ZnO particles and the effect of temperature in the thermal treatment were investigated. The samples were characterized by thermogravimetric analysis, Raman, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, specific surface area (Brunauer-Emmett-Teller and diffuse reflectance spectroscopy. The photocatalytic activity of these materials in the decolorization of direct red 23 diazo dye was studied. The complete conversion into oxides from oxalates at lower temperatures was determinant in the photocatalytic efficiency of both the oxides. The presence of silver in zinc oxide, treated at 400 °C, more than doubled the rate constant of diazo dye decolorization (6.87×10-3 min-1 with respect to ZnO, treated at 600 °C, resulting in 3.07×10-3 min-1 under UV irradiation at 30 °C.

  19. ZnO 1-D nanostructures: Low temperature synthesis and ...

    Indian Academy of Sciences (India)

    Wintec

    high-resolution transmission electron microscope (HRTEM;. JEOL 2010). ... low magnification image of the ZnO nanorod arrays show- ing uniformity of the .... in inverted nail like shape. .... where E (local) is the local electric field at the emitting.

  20. Hydrothermal growth of ZnO nanoflowers and their photocatalyst ...

    Indian Academy of Sciences (India)

    ray diffraction, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy and photoluminescence. ZnO nanoflowers with star-like morphology were of pure wurtzite phase.

  1. Hydrodynamic fabrication of structurally gradient ZnO nanorods.

    Science.gov (United States)

    Kim, Hyung Min; Youn, Jae Ryoun; Song, Young Seok

    2016-02-26

    We studied a new approach where structurally gradient nanostructures were fabricated by means of hydrodynamics. Zinc oxide (ZnO) nanorods were synthesized in a drag-driven rotational flow in a controlled manner. The structural characteristics of nanorods such as orientation and diameter were determined by momentum and mass transfer at the substrate surface. The nucleation of ZnO was induced by shear stress which plays a key role in determining the orientation of ZnO nanorods. The nucleation and growth of such nanostructures were modeled theoretically and analyzed numerically to understand the underlying physics of the fabrication of nanostructures controlled by hydrodynamics. The findings demonstrated that the precise control of momentum and mass transfer enabled the formation of ZnO nanorods with a structural gradient in diameter and orientation.

  2. Reducing ZnO nanoparticle cytotoxicity by surface modification.

    Science.gov (United States)

    Luo, Mingdeng; Shen, Cenchao; Feltis, Bryce N; Martin, Lisandra L; Hughes, Anthony E; Wright, Paul F A; Turney, Terence W

    2014-06-07

    Nanoparticulate zinc oxide (ZnO) is one of the most widely used engineered nanomaterials and its toxicology has gained considerable recent attention. A key aspect for controlling biological interactions at the nanoscale is understanding the relevant nanoparticle surface chemistry. In this study, we have determined the disposition of ZnO nanoparticles within human immune cells by measurement of total Zn, as well as the proportions of extra- and intracellular dissolved Zn as a function of dose and surface coating. From this mass balance, the intracellular soluble Zn levels showed little difference in regard to dose above a certain minimal level or to different surface coatings. PEGylation of ZnO NPs reduced their cytotoxicity as a result of decreased cellular uptake arising from a minimal protein corona. We conclude that the key role of the surface properties of ZnO NPs in controlling cytotoxicity is to regulate cellular nanoparticle uptake rather than altering either intracellular or extracellular Zn dissolution.

  3. Enhanced antimicrobial activity in biosynthesized ZnO nanoparticles

    Science.gov (United States)

    Kumari, Niraj; Kumari, Priti; Jha, Anal K.; Prasad, K.

    2018-05-01

    Biological synthesis of different metallic and/or oxide nanoparticles and their applications especially in agriculture and biomedical sciences are gaining prominence nowadays due to their handy and reproducible synthetic protocols which are cost-effective and eco-friendly. In this work, green synthesis of zinc oxide nanoparticles (ZnO NPs) using the alcoholic extract of Azadirachta indica as a reducing and stabilizing agent has been presented. Formation of ZnO NPs was confirmed by X-ray diffraction, scanning and transmission electron microscopy techniques. The phytochemicals responsible for nano-transformation were principally alkaloids, flavanoids, terpenoids, tannins and organic acids present in the Azadirachta indica leaves. The synthesized ZnO NPs were used for antimicrobial assays by disc diffusion method against Staphylococcus aureus and Candida albicans. Results showed that ZnO NPs may act as antimicrobial agent especially against skin infections.

  4. Investigation of the pulsed electrochemical deposition of ZnO

    International Nuclear Information System (INIS)

    Dunkel, Christian; Lüttich, Franziska; Graaf, Harald; Oekermann, Torsten; Wark, Michael

    2012-01-01

    The influence of pulse parameters on the morphology of ZnO prepared by pulsed cathodic electrodeposition from oxygen-saturated aqueous ZnCl 2 solution on ITO (indium tin oxide)/glass substrates was investigated. It was found that the ratio between the pulse and the pause duration has a crucial influence on the crystal growth, reaching the highest density of the films with pause/pulse-ratios between 0.25 and 1. Longer pauses cause an Ostwald-like ripening of the ZnO crystals and therewith a strong change in the crystal morphology from roundly shaped to hexagonal. Also the hydrophilicity of the substrate resulting from pre-treatment has a crucial influence on the deposited films, leading to films only consisting of few large and separately grown ZnO crystals for highly hydrophilic substrates and an increasing fraction of small densely grown ZnO crystals with increasing hydrophobicity.

  5. Biogenic ZnO nanoparticles synthesized using L. aculeata leaf ...

    Indian Academy of Sciences (India)

    The antifungal activity of ZnO nanoparticles were determined using the well diffusion method. All the ... 1. Introduction. Nanoparticles have gained increasing importance because ... The synthesis of nanoparticles by conventional physical.

  6. Sonochemical effects on ZnO particles

    Directory of Open Access Journals (Sweden)

    Bruna C. Costa

    2014-01-01

    Full Text Available La variedad de aplicaciones tecnológicas relacionadas a los dispositivos basados en óxidos semiconductores nanoestructurados ha despertado un gran interés en la comunidad científica, haciendo con que los estudios relacionados a estos materiales han aumentado en los últimos años. Entre estos materiales, se encuentra el óxido de zinc (ZnO, que presenta aplicaciones en las más diversas áreas, desde diodos emisores de luz (LEDs a los dispositivos fotovoltaicos en células solares. Con el conocimiento de que las propiedades químicas y físicas que confieren a estos materiales las posibilidades de aplicación en dispositivos tecnológicos son fuertemente dependientes de las rutas de síntesis empleadas para la obtención de los mismos, presentamos en este trabajo una investigación con respecto de las modificaciones morfológicas ocurridas en partículas de ZnO, cuando el mismo es expuesto a un tratamiento sonoquímico, además de las influencias de los parámetros relacionados a éste método de síntesis en la obtención de este material. Para analizar los parámetros presentados anteriormente, tres muestras fueron preparadas, dos de ellas manteniendo la amplitud y variando el tiempo de sonicación y otra manteniendo el tiempo y variando la amplitud de sonicación, durante el tratamiento sonoquímico. El análisis de los resultados obtenidos indica que el tratamiento sonoquímico conduce a modificaciones morfológicas superficiales en las partículas de ZnO, además estas modificaciones se presentaron más evidentes cuando una mayor amplitud y un mayor tiempo de sonicación fueron utilizados en la síntesis de las muestras.

  7. RECONSTRUCTION OF CALCINED Zn -Al LAYERED DOUBLE HYDROXIDES DURING TETRACYCLINE ADSORPSION

    Directory of Open Access Journals (Sweden)

    G. M. Starukh

    2015-12-01

    Full Text Available Zn-Al mixed oxides containing ZnO different degree crystallinity were obtained by calcinations of Zn-Al layered double hydroxides (LDHs. The reconstruction of calcined Zn-Al LDHs has been performed under stirring in aqueous suspensions. The assynthesized LDHs, its decomposition products, as well as the reconstructed solids upon hydration were characterized by XRD, N2adsorption, differential and thermal gravimetric analysis. It was found that the ability of Zn-Al LDHs to recover a layered structure under the hydration of mixed oxides depends on the degree of ZnO crystallinity. The partial reconstruction of Zn-Al layered structure occurs in tetracycline solutions irrespective to the degree of ZnO crystallinity in calcined LDHs. Calcined Zn-Al LDHs demonstrate the higher adsorption capacity to tetracycline in comparison with as-prepared Zn-Al LDHs. The adsorption of TC on calcined and uncalcined ZnAl LDHs occurs on the centers of one particular type. It is suggested that surface complexation of the A-ring ligand of TC with Al-OH centers takes place.

  8. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    OpenAIRE

    Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

  9. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  10. Photocatalytic Water Oxidation on ZnO: A Review

    Directory of Open Access Journals (Sweden)

    Sharifah Bee Abdul Hamid

    2017-03-01

    Full Text Available The investigation of the water oxidation mechanism on photocatalytic semiconductor surfaces has gained much attention for its potential to unlock the technological limitations of producing H2 from carbon-free sources, i.e., H2O. This review seeks to highlight the available scientific and fundamental understanding towards the water oxidation mechanism on ZnO surfaces, as well as present a summary on the modification strategies carried out to increase the photocatalytic response of ZnO.

  11. ZnO based potentiometric and amperometric nanosensors.

    Science.gov (United States)

    Willander, Magnus; Khun, Kimleang; Ibupoto, Zafar Hussain

    2014-09-01

    The existence of nanomaterials provides the solid platform for sensing applications due to owing of high sensitivity and a low concentration limit of detection. More likely used nanomaterials for sensing applications includes gold nanoparticles, carbon nanotubes, magnetic nanoparticles such as Fe3O4, quantum dots and metal oxides etc. Recently nanomaterial and biological detection becomes an interdisciplinary field and is very much focussed by the researchers. Among metal oxides ZnO is largely considered due to its less toxic nature, biocompatible, cheap and easy to synthesis. ZnO nanomaterial is highly used for the chemical sensing, especially electrochemical sensing due to its fascinating properties such as high surface to volume ratio, atoxic, biosafe and biocompatible. Moreover, ZnO nanostructures exhibit unique features which could expose a suitable nanoenviroment for the immobilization of proteineous material such as enzymes, DNA, antibodies, etc. and in doing so it retains the biological efficiency of the immobilized bio sensitive material. The following review describes the two different coatings (i.e., ionophore and enzyme) on the surface of ZnO nanorods for the chemical sensing of zinc ion detection, thallium (I) ion detection, and L-lactic acid and the measurement of galactose molecules. ZnO nanorods provide the excellent transducing properties in the generation of strong electrical signals. Moreover, this review is very much focused on the applications of ZnO nanostructures in the sensing field.

  12. Synthesis, characteristics and antimicrobial activity of ZnO nanoparticles

    Science.gov (United States)

    Janaki, A. Chinnammal; Sailatha, E.; Gunasekaran, S.

    2015-06-01

    The utilization of various plant resources for the bio synthesis of metallic nano particles is called green technology and it does not utilize any harmful protocols. Present study focuses on the green synthesis of ZnO nano particles by Zinc Carbonate and utilizing the bio-components of powder extract of dry ginger rhizome (Zingiber officinale). The ZnO nano crystallites of average size range of 23-26 nm have been synthesized by rapid, simple and eco friendly method. Zinc oxide nano particles were characterized by using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray spectroscopy (EDX). FTIR spectra confirmed the adsorption of surfactant molecules at the surface of ZnO nanoparticles and the presence of ZnO bonding. Antimicrobial activity of ZnO nano particles was done by well diffusion method against pathogenic organisms like Klebsiella pneumonia, Staphylococcus aureus and Candida albicans and Penicillium notatum. It is observed that the ZnO synthesized in the process has the efficient antimicrobial activity.

  13. ZnO Nanostructures for Tissue Engineering Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2017-11-01

    Full Text Available This review focuses on the most recent applications of zinc oxide (ZnO nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair.

  14. Aqueous chemical growth and application of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Postels, Bianca; Kasprzak, Anna; Mofor, Augustine C.; Wehmann, Hergo-Heinrich; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

    2007-07-01

    A very promising fabrication process for ZnO nanostructures is the aqueous chemical growth (ACG), since it is a cost efficient and low temperature approach. Using this growth technique we generated wafer-scale ZnO nanorod arrays on Si, sapphire, ITO coated glass and even on flexible polymer substrates. ACG is found to be only weakly influenced by the substrate material and we are also able to control the dimensions of the ZnO nanorods. Another benefit of ACG is the ability to fabricate patterned arrays of ZnO nanorods by a selective growth process on structured metallised surfaces. Results of structural analysis with SEM and XRD are reported. Additionally, optical properties were investigated by PL measurements. First attempts on the preparation of dye sensitised solar cells (DSSCs) are also reported. Here, the traditional sintered TiO{sub 2} nanoparticles are replaced by a densely packed and vertically aligned array of ACG ZnO nanorods. The size and morphology of the ZnO nanorods can be controlled. The influence of the length of the nanorods on the cell properties is investigated. A vapour phase transport technique was also used as alternative growth method.

  15. High efficient ZnO nanowalnuts photocatalyst: A case study

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Feng [College of Chemistry and Chemical Engineering, Mudanjiang Normal University, Mudanjiang 157011 (China); College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Zhang, Siwen; Liu, Yang [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Liu, Hongfeng [School of Basic Medical Sciences, Mudanjiang Medical University, Mudanjiang 157011 (China); Qu, Fengyu [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Cai, Xue, E-mail: xuecai@mail.sdu.edu.cn [College of Chemistry and Chemical Engineering, Mudanjiang Normal University, Mudanjiang 157011 (China); Wu, Xiang, E-mail: wuxiang@hrbnu.edu.cn [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China)

    2014-11-15

    Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

  16. High efficient ZnO nanowalnuts photocatalyst: A case study

    International Nuclear Information System (INIS)

    Yan, Feng; Zhang, Siwen; Liu, Yang; Liu, Hongfeng; Qu, Fengyu; Cai, Xue; Wu, Xiang

    2014-01-01

    Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment

  17. Atomic absorption photometry of excess Zn in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Lott, K.; Shinkarenko, S.; Tuern, L. [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Kirsanova, T.; Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9, 125047 Moscow (Russian Federation)

    2005-02-01

    Zn excess in ZnO is built up automatically at high temperatures. Excess Zn in hydrothermally grown ZnO single crystals were investigated by the atomic absorption photometry (AAP) method. To determine the excess zinc in ZnO samples, the AAP of zinc vapour was used in the conditions of solid-vapour equilibrium. Zn AAP allowed to eliminate excess Zn connected differentially in ZnO samples. To fix Zn non-stoichiometry, all the ZnO samples tested were previously heat treated at temperature interval from 850 to 900 C and at fixed Zn vapour pressures from 0.1 to 0.9 of saturated zinc vapour pressure at given treatment temperature. The analysis of temperature dependence of zinc vapour pressure indicated that the impurity metals take active role in the determination of non-stoichiometric zinc. The impurities Mn, Fe, Co, Ni and Cu form oxides which will reduce during annealing in Zn vapor up to metals form. During AAP measurement in optical cuvette, these metals react with ZnO and give additional Zn vapor pressure. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Stimulated emission from ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Hauschild, R.; Lange, H.; Priller, H.; Klingshirn, C.; Kalt, H. [Institut fuer Angewandte Physik, Universitaet Karlsruhe (T.H.), 76128 Karlsruhe (Germany); Kling, R. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert-Einstein Allee 45, 89081 Ulm (Germany); Waag, A. [Institut fuer Halbleitertechnik, TU-Braunschweig, H.-Sommer-Str. 66, 38106 Braunschweig (Germany); Fan, H.J.; Zacharias, M. [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

    2006-03-15

    By means of time resolved spectroscopy we compare two samples of ZnO nanorods with respect to their suitability as stimulated emitters. In the case of narrow nanorods their wave guiding quality causes a suppression of exciton-exciton scattering whereas no laser emission is detectable. Unlike their narrow counterparts, wide nanorods not only benefit from a larger overlap of the guided mode with the gain medium but a variation in VLS growth results in gold nanoparticles being present at the bottom of nanorods. Consequently, laser emission from single wide rods is evidenced up to 150 K. In addition to experimental studies we carry out 3D numerical simulations of the electric field distribution to evaluate the influence of gold nanoparticles at the nanorod/substrate interface. This finite element analysis confirms that gold leads to an enhancement of confinement within the resonator. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Suzuki, R.; Ohdaira, T.

    2005-01-01

    ZnO crystals were implanted with N + , O + , and Al + , and co-implanted with O + /N + and Al + /N + ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N + -implanted and Al + /N + co-implanted samples, these vacancy clusters are only partially annealed at 800 deg. C, as compared with their entire recovery in the O + - and Al + -implanted samples at 800-900 deg. C, suggesting a strong interaction between nitrogen and vacancy clusters. However, in the O + /N + co-implanted sample, most vacancy clusters disappear at 800 deg. C. Probably oxygen scavenges nitrogen to enhance the annealing of the vacancy clusters. Upon further annealing at 1000-1100 deg. C, nitrogen also forms stable complexes with thermally generated vacancies. These nitrogen-related vacancy complexes need high-temperature annealing at 1200-1250 deg. C to be fully removed

  20. Physical properties and heterojunction device demonstration of aluminum-doped ZnO thin films synthesized at room ambient via sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, Hakan, E-mail: hkaraagac@ucdavis.edu [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States); Yengel, Emre; Saif Islam, M. [Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616 (United States)

    2012-04-25

    Highlights: Black-Right-Pointing-Pointer Undoped and Al doped ZnO (AZO) thin films were successfully prepared using sol-gel technique. Black-Right-Pointing-Pointer Structural analysis has revealed that Al doping has a significant influence on preferential orientation. Black-Right-Pointing-Pointer It has been observed that wrinkles forms on the surface of films when annealed with a fast heat ramp up rate. Black-Right-Pointing-Pointer Optical analysis has revealed that that the band gap energy of ZnO thin film increases with increasing Al doping concentration. Black-Right-Pointing-Pointer The lowest resistivity is observed for 1% Al ZnO thin film, which is 2.2 Multiplication-Sign 10{sup -2} ({Omega} cm). - Abstract: ZnO and some of its ternary wide-bandgap alloys offer interesting opportunities for designing materials with tunable band gaps, strong piezoresistivity and controlled electrical conductance with high optical transparency. Synthesizing these materials on arbitrary substrates using low-cost and unconventional techniques can help in integrating semiconductors with different physical, electrical, and optical characteristics on a single substrate for heterogeneous integration of multifunctional devices. Here we report the successful synthesis of aluminum (Al) doped ZnO (AZO) thin films on soda-lime glass, silicon and fluorine doped tin oxide (FTO) pre-coated glass substrates by using sol-gel deposition method at ambient condition. X-ray diffraction (XRD) analysis revealed that varying degree of Al doping significantly impacts the crystal orientation, semiconductor bandgap and optical transparency of the film. Crystal structure of the film is also found to be strongly correlated to the characteristics of the substrate material. The impact of heating rate during post annealing process is studied and optimized in order to improve the surface morphology of the deposited films. Optical characterizations have revealed that bandgap energy of AZO films can be tuned

  1. Effect of ZnO, ZrO2 and B2O3 on clinkerization process. Part I. Clinkerization reactions and clinker composition

    Directory of Open Access Journals (Sweden)

    Palacios, M.

    2008-12-01

    Full Text Available The use of clay-based product waste as an alternative prime material in Portland cement raw mixes raises the ZnO, ZrO2 and B2O3 content in the clinker. These compounds are found in the enamelled surface of the tile added to the raw mix. The present study explores the effect of adding 0.5 and 2% ZnO, ZrO2 and B2O3 to the raw mix, separately and jointly, on clinkerization and the distribution and morphology of the mineral phases in the clinker. The findings showed that while ZnO and ZrO2 are fixed in the clinker, B2O3 is partially volatized. Zinc oxide acted as a flux, while neither ZrO2 nor B2O3 increased the molten phase. The addition of the oxides to the raw mix changed the content of the main mineral phases in the clinker. Zinc oxide lowered the C3S and C3A contents, ZrO2 reduced the ferritic phase and B2O3 stabilized C2S. New mineral phases, namely 3CaO·ZnO·2Al2O3 and CaZrO3, were identified in the clinkers obtained when 2% ZnO and ZrO2 were added to the raw mix.El empleo de residuos cerámicos como materia prima alternativa en la fabricación del crudo de cemento Portland, aumenta el contenido de ZnO, ZrO2 y B2O3 en el clinker. Estos elementos se encuentran en la capa esmaltada de los residuos cerámicos incorporados al crudo. Por ello el presente trabajo de investigación aborda el estudio del efecto que tiene la adición en el crudo de contenidos del 0,5 y 2% de ZnO, ZrO2 y B2O3 de manera individual y conjunta en los procesos de clinkerización, en la distribución y morfología de las fases mineralógicas del clinker.Los resultados obtenidos han demostrado que el ZnO y ZrO2 permanecen fijados en el clinker, sin embargo el B2O3 se volatiliza parcialmente. El ZnO actúa como fundente, mientras que el ZrO2 y el B2O3 no aumentan el contenido de fase fundida. La adición de estos óxidos al crudo modifica el contenido de las principales fases mineralógicas del clinker. El ZnO disminuye los contenidos de C3S y C3A, el ZrO2 disminuye

  2. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  3. Microwave synthesis and photocatalytic activities of ZnO bipods with different aspect ratios

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Fazhe; Zhao, Zengdian [Analysis and Testing Center, Shandong University of Technology, Zibo 255100 (China); Qiao, Xueliang, E-mail: xuelqiao@163.com [State Key Laboratory of Plastic Forming Simulation and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China); Tan, Fatang; Wang, Wei [State Key Laboratory of Plastic Forming Simulation and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China)

    2016-02-15

    Highlights: • We synthesized linked ZnO nanorods by a facile microwave method. • The effect of reaction parameters on ZnO was investigated. • ZnO bipods with different aspect ratios were prepared. • The photocatalytic performance of ZnO bipods was evaluated. - Abstract: Linked ZnO nanorods have been successfully prepared via a facile microwave method without any post-synthesis treatment. The X-ray diffraction (XRD) patterns indicated the precursor had completely transformed into the pure ZnO crystal. The images of field emitting scanning electron microscope (FESEM) and transmission electron microscope (TEM) showed that linked ZnO nanorods consisted predominantly of ZnO bipods. The formation process of the ZnO bipods was clearly discussed. ZnO bipods with different aspect ratios have been obtained by tuning the concentrations of reagents and microwave power. Moreover, the photocatalytic performance of ZnO bipods with different aspect ratios for degradation of methylene blue was systematically evaluated. The results of photocatalytic experiments showed that the photocatalytic activity increased with the aspect ratios of ZnO bipods increased. The reason is that ZnO bipods with larger aspect ratio have higher surface area, which can absorb more MB molecules to react with ·OH radicals.

  4. Physical and chemical contributions of a plasma treatment in the growth of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Jang, J.T. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2013-11-15

    Highlights: •ZnO nanorods were grown by hydrothermal synthesis. •Oxygen plasma was done on the surface of seed ZnO nanorods. •The ZnO nanorods with and without plasma treatment were characterized. •The results showed that the optical and structural properties of ZnO nanorods with plasma treatment were enhanced. -- Abstract: We analyzed the enhancement of optical and structural properties of ZnO nanorods by using a plasma treatment. In this study, seed ZnO nanorods were grown by hydrothermal synthesis for 1 h on a ZnO buffered Si substrate. The seed ZnO nanorods were then treated with an oxygen plasma. Next, ZnO was grown for an additional 4 h by hydrothermal synthesis. The resultant ZnO nanorods were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), X-ray diffraction (XRD) and photoluminescence (PL). The measurements showed that the plasma treatment of the seed ZnO nanorods increased the roughness of the buffer layer and the concentration of oxygen ions on the surfaces of the seed ZnO nanorods and the buffer layer, leading to improved optical and structural properties. In this study, we found that the plasma treatment on the seed ZnO nanorods enhanced the optical and structural properties of the ZnO nanorods.

  5. Akinnifesi et al (11)

    African Journals Online (AJOL)

    Timothy Ademakinwa

    ZnO powder with additives of transition metal oxide such as Bi O ... ohmic properties were obtained from the electrical field – current density characteristics. ... intergranular phase separating grains gave rise to ... MATERIALS AND METHODS.

  6. Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer.

    Science.gov (United States)

    Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus

    2013-09-30

    In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

  7. Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer

    Directory of Open Access Journals (Sweden)

    Anees A. Ansari

    2013-09-01

    Full Text Available In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

  8. Enhanced room temperature ferromagnetism in Cr-doped ZnO nanoparticles prepared by auto-combustion method

    Science.gov (United States)

    Haq, Khizar-ul; Irfan, M.; Masood, Muhammad; Saleem, Murtaza; Iqbal, Tahir; Ahmad, Ishaq; Khan, M. A.; Zaffar, M.; Irfan, Muhammad

    2018-04-01

    Zn1‑x Cr x O (x = 0.00, 0.01, 0.03, 0.05, 0.07, and 0.09) nanoparticles were synthesized, by an auto-combustion method. Structural, optical, and magnetic characteristics of Cr-doped ZnO samples calcined at 600 °C have been analyzed by using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), UV–Vis spectroscopy and vibrating sample magnetometer (VSM). The XRD data confirmed the hexagonal wurtzite structure of pure and Cr-doped ZnO nanoparticles. The calculated values of grain size using Scherrer's formula are in the range of 30.7–9.2 nm. The morphology of nanopowders has been observed by FESEM, and EDS results confirmed a systematic increase of Cr content in the samples and clearly indicate with no impurity element. The band gaps, computed by UV–Vis spectroscopy, are in the range of 2.83–2.35 eV for different doping concentrations. By analyzing VSM data, significantly enhanced room temperature ferromagnetism is identified in Cr-doped ZnO samples. The value of magnetization is a 12 times increased of the value reported by Daunet al. (2010). Room temperature ferromagnetism of the nanoparticles is of vital prominence for spintronics applications. Project supported by the Office of Research, Innovation, and Commercialization (ORIC), MUST Mirpur (AJK).

  9. The role of the VZn-NO-H complex in the p-type conductivity in ZnO.

    Science.gov (United States)

    Amini, M N; Saniz, R; Lamoen, D; Partoens, B

    2015-02-21

    Past research efforts aiming at obtaining stable p-type ZnO have been based on complexes involving nitrogen doping. A recent experiment by (J. G. Reynolds et al., Appl. Phys. Lett., 2013, 102, 152114) demonstrated a significant (∼10(18) cm(-3)) p-type behavior in N-doped ZnO films after appropriate annealing. The p-type conductivity was attributed to a VZn-NO-H shallow acceptor complex, formed by a Zn vacancy (VZn), N substituting O (NO), and H interstitial (Hi). We present here a first-principles hybrid functional study of this complex compared to the one without hydrogen. Our results confirm that the VZn-NO-H complex acts as an acceptor in ZnO. We find that H plays an important role, because it lowers the formation energy of the complex with respect to VZn-NO, a complex known to exhibit (unstable) p-type behavior. However, this additional H atom also occupies the hole level at the origin of the shallow behavior of VZn-NO, leaving only two states empty higher in the band gap and making the VZn-NO-H complex a deep acceptor. Therefore, we conclude that the cause of the observed p-type conductivity in experiment is not the presence of the VZn-NO-H complex, but probably the formation of the VZn-NO complex during the annealing process.

  10. Fabrication and study of sol-gel ZnO films for use in Si-based heterojunction photovoltaic devices

    Directory of Open Access Journals (Sweden)

    Daniya Mukhamedshina

    2017-12-01

    Full Text Available This paper considers the use of zinc oxide thin films prepared via the sol-gel route as an n-type layer in heterojunction ZnO/Si solar cells. The ZnO films were prepared via a simple spin-coating technique using zinc acetate dihydrate as a zinc precursor, isopropanol as a solvent and monoethanolamine as a stabilizing agent. Optical, structural and morphological properties of ZnO were investigated for thin films grown from sol-gel solutions with different concentrations both on glass and silicon substrates. As such, a distribution of crystallite sizes and surface topology parameters corresponding to various zinc acetate dihydrate concentrations were obtained to elucidate optimal film deposition conditions. Correlation between thin film morphology and structural characteristics of ZnO thin films was made based on atomic-force microscopy studies. Finally, our results on fabrication, characterization and simulation of ZnO/Si heterojunctions for use as photovoltaic devices are presented. Although noticeable rectifying and photovoltaic properties were observed for Al/Si/ZnO/Ti/Au devices, there appears to exist a considerable room for device improvement with simulation studies suggesting that efficiencies of the order of 24% may be obtained for devices with optimal silicon wafer passivation, i.e. with lifetimes of the order of 1000 μs.

  11. Electrochemical Sensing, Photocatalytic and Biological Activities of ZnO Nanoparticles: Synthesis via Green Chemistry Route

    Science.gov (United States)

    Yadav, L. S. Reddy; Archana, B.; Lingaraju, K.; Kavitha, C.; Suresh, D.; Nagabhushana, H.; Nagaraju, G.

    2016-05-01

    In this paper, we have successfully synthesized ZnO nanoparticles (Nps) via solution combustion method using sugarcane juice as the novel fuel. The structure and morphology of the synthesized ZnO Nps have been analyzed using various analytical tools. The synthesized ZnO Nps exhibit excellent photocatalytic activity for the degradation of methylene blue dye, indicating that the ZnO Nps are potential photocatalytic semiconductor materials. The synthesized ZnO Nps also show good electrochemical sensing of dopamine. ZnO Nps exhibit significant bactericidal activity against Klebsiella aerogenes, Pseudomonas aeruginosa, Eschesichia coli and Staphylococcus aureus using agar well diffusion method. Furthermore, the ZnO Nps show good antioxidant activity by potentially scavenging 1-diphenyl-2-picrylhydrazyl (DPPH) radicals. The above studies clearly demonstrate versatile applications of ZnO synthesized by simple eco-friendly route.

  12. Fabrication and photovoltaic properties of ZnO nanorods/perovskite solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Yasuhiro; Tanaike, Kohei; Akiyama, Tsuyoshi; Fujimoto, Kazuya; Suzuki, Atsushi; Balachandran, Jeyadevan; Oku, Takeo, E-mail: oku@mat.usp.ac.jp [Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

    2016-02-01

    ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} with the longest ZnO nanorods.

  13. Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.

    Science.gov (United States)

    Wei, Lei; Liu, Qi-Xuan; Zhu, Bao; Liu, Wen-Jun; Ding, Shi-Jin; Lu, Hong-Liang; Jiang, Anquan; Zhang, David Wei

    2016-12-01

    Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.

  14. Photoluminescence and lasing properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

    2010-01-01

    In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

  15. Solution precursor plasma deposition of nanostructured ZnO coatings

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2011-01-01

    Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  16. Solution precursor plasma deposition of nanostructured ZnO coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

    2011-08-15

    Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  17. Tuning magnetism by biaxial strain in native ZnO.

    Science.gov (United States)

    Peng, Chengxiao; Wang, Yuanxu; Cheng, Zhenxiang; Zhang, Guangbiao; Wang, Chao; Yang, Gui

    2015-07-07

    Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

  18. Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2015-07-15

    Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shell materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition

  19. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  20. Ti, Al

    Indian Academy of Sciences (India)

    In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti0.5Al0.5 powder metallurgical target in a reactive nitrogen atmosphere at ...

  1. Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

    Science.gov (United States)

    Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

    2017-07-01

    Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

  2. Efficiency Enhancement of Dye-Sensitized Solar Cells’ Performance with ZnO Nanorods Grown by Low-Temperature Hydrothermal Reaction

    Directory of Open Access Journals (Sweden)

    Fang-I Lai

    2015-12-01

    Full Text Available In this study, aligned zinc oxide (ZnO nanorods (NRs with various lengths (1.5–5 µm were deposited on ZnO:Al (AZO-coated glass substrates by using a solution phase deposition method; these NRs were prepared for application as working electrodes to increase the photovoltaic conversion efficiency of solar cells. The results were observed in detail by using X-ray diffraction, field-emission scanning electron microscopy, UV-visible spectrophotometry, electrochemical impedance spectroscopy, incident photo-to-current conversion efficiency, and solar simulation. The results indicated that when the lengths of the ZnO NRs increased, the adsorption of D-719 dyes through the ZnO NRs increased along with enhancing the short-circuit photocurrent and open-circuit voltage of the cell. An optimal power conversion efficiency of 0.64% was obtained in a dye-sensitized solar cell (DSSC containing the ZnO NR with a length of 5 µm. The objective of this study was to facilitate the development of a ZnO-based DSSC.

  3. Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

    Science.gov (United States)

    Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

    2018-04-01

    We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

  4. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

    2009-01-01

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

  5. Enhanced ultraviolet photo-response in Dy doped ZnO thin film

    Science.gov (United States)

    Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

    2018-02-01

    In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

  6. Preparation and photocatalytic property of a novel dumbbell-shaped ZnO microcrystal photocatalyst

    DEFF Research Database (Denmark)

    Sun, Jian-Hui; Dong, Shu-Ying; Wang, Yong-Kui

    2009-01-01

    achieved 68.0%, 99.0% and 98.5%, the TOC removal efficiencies achieved 43.2%, 59.4% and 70.6%, respectively. Compared to commercial ZnO, 16-22% higher TOC removal efficiency was obtained by the dumbbell-shaped ZnO. The results indicated that the prepared dumbbell-shaped ZnO microcrystal photocatalyst...

  7. Hierarchical nanoflowers assembled with Au nanoparticles decorated ZnO nanosheets toward enhanced photocatalytic properties

    DEFF Research Database (Denmark)

    Yu, Cuiyan; Yu, Yanlong; Xu, Tao

    2017-01-01

    Hierarchical nanoflowers assembled with Au nanoparticles (NPs) decorated ZnO nanosheets (Au-ZnO nanosheet flowers, AZNSFs) were successful synthesized. The AZNSFs showed more efficient activity to photodegradation of RhB than that of pure ZnO nanosheet flowers and commercial ZnO nanopowders. The ...

  8. Enhanced fluorescence imaging performance of hydrophobic colloidal ZnO nanoparticles by a facile method

    International Nuclear Information System (INIS)

    Zang, Zhigang; Tang, Xiaosheng

    2015-01-01

    Highlights: • A dual phase hydrothermal method was developed to synthesize ZnO nanoparticles. • ZnO nanoparticles show a stability and solubility in the aqueous environment. • ZnO nanoparticles with a blue emission wavelength at around 420 nm and small size (30 nm). • ZnO nanoparticles as biological labeling agent was also shown. - Abstract: A facile synthesis method for the formation of ZnO nanoparticles by using a double-phase reaction was demonstrated in this paper. The morphology of the synthesized ZnO nanoparticles shows a flower-shape. Hydrogen peroxide was used as a unique oxygenic source to promote the formation of ZnO in the presence of organic zinc precursor. The as-synthesized ZnO nanoparticles also show a stability and solubility in the aqueous environment. The structure and properties of ZnO nanoparticles were investigated by the transmission electron microscopy (TEM) and X-ray diffraction (XRD) as well as UV–vis and photoluminescence spectroscopy. The as-prepared hydrophobic colloidal ZnO nanoparticles could be modified to become water-soluble via ligand exchange with amineothanethiol⋅HCl while retaining the photoluminescence properties. In addition, the potential application for biological label of water-soluble ZnO nanoparticles were also demonstrated. These results not only have applications towards using colloidal ZnO nanoparticles effectively in biological fluorescence imaging, but also promote its application in the field of targeted drug delivery

  9. Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

    KAUST Repository

    Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

    2010-01-01

    -synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass

  10. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  11. Chemical Sensing Applications of ZnO Nanomaterials

    Science.gov (United States)

    Chaudhary, Savita; Umar, Ahmad; Bhasin, K. K.

    2018-01-01

    Recent advancement in nanoscience and nanotechnology has witnessed numerous triumphs of zinc oxide (ZnO) nanomaterials due to their various exotic and multifunctional properties and wide applications. As a remarkable and functional material, ZnO has attracted extensive scientific and technological attention, as it combines different properties such as high specific surface area, biocompatibility, electrochemical activities, chemical and photochemical stability, high-electron communicating features, non-toxicity, ease of syntheses, and so on. Because of its various interesting properties, ZnO nanomaterials have been used for various applications ranging from electronics to optoelectronics, sensing to biomedical and environmental applications. Further, due to the high electrochemical activities and electron communication features, ZnO nanomaterials are considered as excellent candidates for electrochemical sensors. The present review meticulously introduces the current advancements of ZnO nanomaterial-based chemical sensors. Various operational factors such as the effect of size, morphologies, compositions and their respective working mechanisms along with the selectivity, sensitivity, detection limit, stability, etc., are discussed in this article. PMID:29439528

  12. Epitaxial GaN around ZnO nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

  13. Hydrogen-Induced Plastic Deformation in ZnO

    Science.gov (United States)

    Lukáč, F.; Čížek, J.; Vlček, M.; Procházka, I.; Anwand, W.; Brauer, G.; Traeger, F.; Rogalla, D.; Becker, H.-W.

    In the present work hydrothermally grown ZnO single crystals covered with Pd over-layer were electrochemically loaded with hydrogen and the influence of hydrogen on ZnO micro structure was investigated by positron annihilation spectroscopy (PAS). Nuclear reaction analysis (NRA) was employed for determination of depth profile of hydrogen concentration in the sample. NRA measurements confirmed that a substantial amount of hydrogen was introduced into ZnO by electrochemical charging. The bulk hydrogen concentration in ZnO determined by NRA agrees well with the concentration estimated from the transported charge using the Faraday's law. Moreover, a subsurface region with enhanced hydrogen concentration was found in the loaded crystals. Slow positron implantation spectroscopy (SPIS) investigations of hydrogen-loaded crystal revealed enhanced concentration of defects in the subsurface region. This testifies hydrogen-induced plastic deformation of the loaded crystal. Absorbed hydrogen causes a significant lattice expansion. At low hydrogen concentrations this expansion is accommodated by elastic straining, but at higher concentrations hydrogen-induced stress exceeds the yield stress in ZnO and plastic deformation of the loaded crystal takes place. Enhanced hydrogen concentration detected in the subsurface region by NRA is, therefore, due to excess hydrogen trapped at open volume defects introduced by plastic deformation. Moreover, it was found that hydrogen-induced plastic deformation in the subsurface layer leads to typical surface modification: formation of hexagonal shape pyramids on the surface due to hydrogen-induced slip in the [0001] direction.

  14. Improvement of the crystallinity and photocatalytic property of zinc oxide as calcination product of Zn–Al layered double hydroxide

    International Nuclear Information System (INIS)

    Ahmed, Abdullah Ahmed Ali; Talib, Zainal Abidin; Hussein, Mohd Zobir bin; Zakaria, Azmi

    2012-01-01

    Highlights: ► ZnO phase and ZnAl 2 O 4 spinel can be formed as Zn–Al–NO 3 –LDH calcination products. ► The crystallinity of ZnO phase increased with an increase of calcination temperature. ► The optical band gaps of ZnO were improved with an increase in temperature. ► The oxygen vacancies in ZnO and ZnAl 2 O 4 generated the ESR signals. - Abstract: Zinc oxide with different degrees of crystallinity can be formed as Zn–Al-layered double hydroxide (Zn–Al–NO 3 –LDH) calcination products. ZnAl 2 O 4 spinel is also formed in a range of calcination temperatures from 600 to 1000 °C from the LDH. X-ray diffraction patterns showed that the crystallinity of the ZnO phase increased as calcination temperatures increased. The LDH structure was fully collapsed at and above 400 °C. The photocatalytic activity was determined by UV–VIS–NIR diffuse reflectance spectroscopy. The band gap of the calcined samples increased as the calcination temperature increased. Electron spin resonance (ESR) spectra of the fresh and calcined LDH at room temperature demonstrated that oxygen vacancies in the ZnO and ZnAl 2 O 4 were responsible for the generation of ESR signals. One BET specific surface area increased from 1 m 2 /g for the LDH to a maximum at 400 °C (43 m 2 /g) and decreased thereafter down to 6 m 2 /g at 1000 °C.

  15. Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z.Q.; Maekawa, M.; Kawasuso, A.; Naramoto, H.

    2007-01-01

    In this work, we implanted B + , O + , Al + , and P + ions into ZnO with energy of 50-380 keV and total doses of 4 x 10 15 cm -2 for each ion. The implantation-induced defects and their thermal recovery were studied using a slow positron beam. Vacancy clusters are produced in all the implanted samples. It is found that the thermal recovery of these vacancies induced by different ions shows much difference. In case of B + and Al + -implantation, the vacancy clusters agglomerate to much larger size and might evolve to microvoids during annealing. However, for O + and P + ions, which are heavier than B + and Al + , the vacancies show a much weaker agglomeration process. The mechanism of such difference is discussed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun [Inje University, Gimhae (Korea, Republic of); Lee, Won Jae [Dong-Eui University, Busan (Korea, Republic of); Chang, Ji Ho [Korea Maritime University, Busan (Korea, Republic of); Son, Chang Sik [Silla University, Busan (Korea, Republic of); Choi, Hee Lack [Pukyong National University, Busan (Korea, Republic of)

    2012-06-15

    Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

  17. Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

    International Nuclear Information System (INIS)

    Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun; Lee, Won Jae; Chang, Ji Ho; Son, Chang Sik; Choi, Hee Lack

    2012-01-01

    Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

  18. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    KAUST Repository

    Mughal, Asad J.

    2017-01-11

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ⟨111⟩MgAl2O4∥⟨0001⟩ZnO out-of-plane orientation and a ⟨1¯1¯2⟩MgAl2O4∥∥⟨011¯0⟩ZnO in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  19. Giant negative photoresistance of ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Barzola-Quiquia, Jose; Esquinazi, Pablo [Division of Superconductivity and Magnetism, University of Leipzig (Germany); Heluani, Silvia [Laboratorio de Fisica del Solido, FCEyT, Universidad Nacional de Tucuman, 4000 S. M. de Tucuman (Argentina); Villafuerte, Manuel [Dept. de Fisica, FCEyT, Universidad Nacional de Tucuman (Argentina); CONICET, Tucuman (Argentina); Poeppl, Andreas [Division of Magnetic Resonance of Complex Quantum Solids, University of Leipzig, D-04103 Leipzig (Germany)

    2011-07-01

    ZnO is a wide band gap semiconductor exhibiting the largest charge-carrier mobility among oxides. ZnO is a material with potential applications for short-wavelength optoelectronic devices, as a blue light emitting diodes and in spintronics. In this contribution we have measured the temperature dependence (30 K < T < 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T < 200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.

  20. Activities towards p-type doping of ZnO

    International Nuclear Information System (INIS)

    Brauer, G; Kuriplach, J; Ling, C C; Djurisic, A B

    2011-01-01

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  1. Activities towards p-type doping of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, G [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany); Kuriplach, J [Department of Low Temperature Physics, Charles University, V Holetovickach 2, CZ-18000 Prague (Czech Republic); Ling, C C; Djurisic, A B, E-mail: g.brauer@fzd.de [Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)

    2011-01-10

    Zinc oxide (ZnO) is an interesting and promising semiconductor material for many potential applications, e.g. in opto-electronics and for sensor devices. However, its p-type doping represents a challenging problem, and the physical reasons of its mostly n-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity by ion implantation are reviewed, and ways to achieve p-type ZnO nanorods and thin films through various growth conditions are summarized. Then, issues associated with the preparation of Schottky contacts is discussed in some detail as this is a requirement of the device formation process. Finally, the possible incorporation of hydrogen and nitrogen into structural defects, which can act as trapping sites for positrons, is discussed in the context of experimental and theoretical positron results and the estimated H and N content in a variety of ZnO materials.

  2. Ultraviolet lasing behavior in ZnO optical microcavities

    Directory of Open Access Journals (Sweden)

    Hongxing Dong

    2017-12-01

    Full Text Available Zinc oxide (ZnO optical microcavity modulated UV lasers have been attracting a wide range of research interests. As one of the most important materials in developing high quality microcavity and efficient UV–visible optoelectronic devices due to its wide band gap (3.37 eV and large exciton binding energy (∼60 meV. In this review, we summarized the latest development of ZnO optical cavity based microlasers, mainly including Fabry-Perot mode lasers and whispering gallery mode lasers. The synthesis and optical studies of ZnO optical microcavities with different morphologies were discussed in detail. Finally, we also consider that the research focus in the near future would include new nanotechnology and physical effects, such as nano/micro fabrication, surface plasmon enhancement, and quantum dot coupling, which may result in new and interesting physical phenomena.

  3. Nanosheet-Assembled ZnO Microflower Photocatalysts

    Directory of Open Access Journals (Sweden)

    Siwen Zhang

    2014-01-01

    Full Text Available Large scale ZnO microflowers assembled by numerous nanosheets are synthesized through a facile and effective hydrothermal route. The structure and morphology of the resultant products are characterized by X-ray diffraction (XRD and scanning electron microscope (SEM. Photocatalytic properties of the as-synthesized products are also investigated. The results demonstrate that eosin red aqueous solution can be degraded over 97% after 110 min under UV light irradiation. In addition, methyl orange (MO and Congo red (CR aqueous solution degradation experiments also are conducted in the same condition, respectively. It showed that nanosheet-assembled ZnO microflowers represent high photocatalytic activities with a degradation efficiency of 91% for CR with 90 min of irradiation and 90% for MO with 60 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

  4. Effect of Water on Ethanol Conversion over ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, Muhammad Mahfuzur; Davidson, Stephen D.; Sun, Junming; Wang, Yong

    2015-10-01

    This work focuses on understanding the role of water on ethanol conversion over zinc oxide (ZnO). It was found that a competitive adsorption between ethanol and water occurs on ZnO, which leads to the blockage of the strong Lewis acid site by water on ZnO. As a result, both dehydration and dehydrogenation reactions are inhibited. However, the extent of inhibition for dehydration is orders of magnitude higher than that for dehydrogenation, leading to the shift of reaction pathway from ethanol dehydration to dehydrogenation. In the secondary reactions for acetaldehyde conversion, water inhibits the acetaldehyde aldol-condensation to crotonaldehyde, favoring the oxidation of acetaldehyde to acetic acid, and then to acetone via ketonization at high temperature (i.e., 400 °C).

  5. High mobility ZnO nanowires for terahertz detection applications

    International Nuclear Information System (INIS)

    Liu, Huiqiang; Peng, Rufang; Chu, Shijin; Chu, Sheng

    2014-01-01

    An oxide nanowire material was utilized for terahertz detection purpose. High quality ZnO nanowires were synthesized and field-effect transistors were fabricated. Electrical transport measurements demonstrated the nanowire with good transfer characteristics and fairly high electron mobility. It is shown that ZnO nanowires can be used as building blocks for the realization of terahertz detectors based on a one-dimensional plasmon detection configuration. Clear terahertz wave (∼0.3 THz) induced photovoltages were obtained at room temperature with varying incidence intensities. Further analysis showed that the terahertz photoresponse is closely related to the high electron mobility of the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.

  6. ZnO nanodisk based UV detectors with printed electrodes.

    Science.gov (United States)

    Alenezi, Mohammad R; Alshammari, Abdullah S; Alzanki, Talal H; Jarowski, Peter; Henley, Simon John; Silva, S Ravi P

    2014-04-08

    The fabrication of highly functional materials for practical devices requires a deep understanding of the association between morphological and structural properties and applications. A controlled hydrothermal method to produce single crystal ZnO hexagonal nanodisks, nanorings, and nanoroses using a mixed solution of zinc sulfate (ZnSO4) and hexamethylenetetramine (HMTA) without the need of catalysts, substrates, or templates at low temperature (75 °C) is introduced. Metal-semiconductor-metal (MSM) ultraviolet (UV) detectors were fabricated based on individual and multiple single-crystal zinc oxide (ZnO) hexagonal nanodisks. High quality single crystal individual nanodisk devices were fabricated with inkjet-printed silver electrodes. The detectors fabricated show record photoresponsivity (3300 A/W) and external quantum efficiency (1.2 × 10(4)), which we attribute to the absence of grain boundaries in the single crystal ZnO nanodisk and the polarity of its exposed surface.

  7. Characterization of donor states in ZnO

    International Nuclear Information System (INIS)

    Seghier, D.; Gislason, H.P.

    2007-01-01

    We performed electrical and optical measurements on as-grown ZnO which exhibits n-type conductivity. So far, neither the origin of the residual conductivity nor the electrical properties of the responsible defects is fully understood. We investigated shallow and deep donors in ZnO materials grown with pulsed laser injection using admittance spectroscopy. We identifed shallow donors with ionization energies as low as 15 meV which may be attributed to native defects. Annealing in nitrogen ambient enhances the conductivity by further lowering the ionization energy of the shallow donors. Using optically excited admittance spectroscopy we also found deep defects. They are strongly metastable and account for a significant part of the persistent photoconductivity in our ZnO materials

  8. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  9. Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps

    International Nuclear Information System (INIS)

    Park, Woojin; Jo, Gunho; Hong, Woong-Ki; Yoon, Jongwon; Choe, Minhyeok; Ji, Yongsung; Kim, Geunjin; Kahng, Yung Ho; Lee, Kwanghee; Lee, Takhee; Lee, Sangchul; Wang, Deli

    2011-01-01

    We investigated the enhanced photoresponse of ZnO nanowire transistors that was introduced with surface-roughness-induced traps by a simple chemical treatment with isopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowire devices is attributed to an increase in adsorbed oxygen on IPA-induced surface traps. The results of this study revealed that IPA-treated ZnO nanowire devices displayed higher photocurrent gains and faster photoswitching speed than transistors containing unmodified ZnO nanowires. Thus, chemical treatment with IPA can be a useful method for improving the photoresponse of ZnO nanowire devices.

  10. In-situ PXRD studies of ZnO nanoparticle growth: How do various salts influence the hydrothermal growth of ZnO?

    DEFF Research Database (Denmark)

    Bøjesen, Espen Drath

    ZnO is a material of great scientific and everyday relevance; it is used widely in all sorts of application. Synthesis of ZnO nanoparticles can be performed by a wide assortment of methods and a tremendous variety of sizes and shapes, it has been suggested that ZnO is the one known compound showing...... the broadest range of nanostructures. Previously many different in-situ characterization methods have been used to investigate the ZnO formation under various synthesis conditions; these include UV-VIS and SAXS. These methods were primarily used to give information on particle size of ZnO formed using soft...... chemical methods and non-aqueous solvents. In our work we have studied the formation of ZnO during hydrothermal syntheses using in-situ powder X-ray diffraction, thus enabling us to extract crystallographic as well as microstructural information. The data was analyzed using Rietveld refinement and whole...

  11. Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

    2016-11-01

    Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

  12. Surface potential driven dissolution phenomena of [0 0 0 1]-oriented ZnO nanorods grown from ZnO and Pt seed layers

    Science.gov (United States)

    Seo, Youngmi; Kim, Jung Hyeun

    2011-06-01

    Highly oriented ZnO nanorods are synthesized hydrothermally on ZnO and Pt seed layers, and they are dissolved in KOH solution. The rods grown on ZnO seed layer show uniform dissolution, but those grown on Pt seed layer are rod-selectively dissolved. The ZnO nanorods from both seed layers show the same crystalline structure through XRD and Raman spectrometer data. However, the surface potential analysis reveals big difference for ZnO and Pt seed cases. The surface potential distribution is very uniform for the ZnO seed case, but it is much fluctuated on the Pt seed case. It suggests that the rod-selective dissolution phenomena on Pt seed case are likely due to the surface energy difference.

  13. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    Science.gov (United States)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  14. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  15. Effect of indium on photovoltaic property of n-ZnO/p-Si heterojunction device prepared using solution-synthesized ZnO nanowire film

    Science.gov (United States)

    Kathalingam, Adaikalam; Kim, Hyun-Seok; Park, Hyung-Moo; Valanarasu, Santiyagu; Mahalingam, Thaiyan

    2015-01-01

    Preparation of n-ZnO/p-Si heterostructures using solution-synthesized ZnO nanowire films and their photovoltaic characterization is reported. The solution-grown ZnO nanowire film is characterized using scanning electron microscope, electron dispersive x-ray, and optical absorption studies. Electrical and photovoltaic properties of the fabricated heterostructures are studied using e-beam-evaporated aluminum as metal contacts. In order to use transparent contact and to simultaneously collect the photogenerated carriers, sandwich-type solar cells were fabricated using ZnO nanorod films grown on p-silicon and indium tin oxide (ITO) coated glass as ITO/n-ZnO NR/p-Si. The electrical properties of these structures are analyzed from current-voltage (I-V) characteristics. ZnO nanowire film thickness-dependent photovoltaic properties are also studied. Indium metal was also deposited over the ZnO nanowires and its effects on the photovoltaic response of the devices were studied. The results demonstrated that all the samples exhibit a strong rectifying behavior indicating the diode nature of the devices. The sandwich-type ITO/n-ZnO NR/p-Si solar cells exhibit improved photovoltaic performance over the Al-metal-coated n-ZnO/p-Si structures. The indium deposition is found to show enhancement in photovoltaic behavior with a maximum open-circuit voltage (Voc) of 0.3 V and short-circuit current (Isc) of 70×10-6 A under ultraviolet light excitation.

  16. Comparative study of ZnO nanorods and thin films for chemical and biosensing applications and the development of ZnO nanorods based potentiometric strontium ion sensor

    Science.gov (United States)

    Khun, K.; Ibupoto, Z. H.; Chey, C. O.; Lu, Jun.; Nur, O.; Willander, M.

    2013-03-01

    In this study, the comparative study of ZnO nanorods and ZnO thin films were performed regarding the chemical and biosensing properties and also ZnO nanorods based strontium ion sensor is proposed. ZnO nanorods were grown on gold coated glass substrates by the hydrothermal growth method and the ZnO thin films were deposited by electro deposition technique. ZnO nanorods and thin films were characterised by field emission electron microscopy [FESEM] and X-ray diffraction [XRD] techniques and this study has shown that the grown nanostructures are highly dense, uniform and exhibited good crystal quality. Moreover, transmission electron microscopy [TEM] was used to investigate the quality of ZnO thin film and we observed that ZnO thin film was comprised of nano clusters. ZnO nanorods and thin films were functionalised with selective strontium ionophore salicylaldehyde thiosemicarbazone [ST] membrane, galactose oxidase, and lactate oxidase for the detection of strontium ion, galactose and L-lactic acid, respectively. The electrochemical response of both ZnO nanorods and thin films sensor devices was measured by using the potentiometric method. The strontium ion sensor has exhibited good characteristics with a sensitivity of 28.65 ± 0.52 mV/decade, for a wide range of concentrations from 1.00 × 10-6 to 5.00 × 10-2 M, selectivity, reproducibility, stability and fast response time of 10.00 s. The proposed strontium ion sensor was used as indicator electrode in the potentiometric titration of strontium ion versus ethylenediamine tetra acetic acid [EDTA]. This comparative study has shown that ZnO nanorods possessed better performance with high sensitivity and low limit of detection due to high surface area to volume ratio as compared to the flat surface of ZnO thin films.

  17. Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

    Science.gov (United States)

    Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

    2012-09-01

    We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

  18. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Jun [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of); Lee, Ho Seok [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Noh, Jin-Seo, E-mail: jinseonoh@gachon.ac.kr [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of)

    2016-03-31

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  19. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Kim, Yong Jun; Lee, Ho Seok; Noh, Jin-Seo

    2016-01-01

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  20. Preparation and characterization of Ce-doped ZnO nanofibers by an electrospinning method

    Directory of Open Access Journals (Sweden)

    Jong-Pil Kim

    2011-02-01

    Full Text Available ZnO and Ce-doped ZnO Nanofibers on (111 Pt/SiO2/Si substrates were produced using an electrospinning technique. The as-prepared composite fibres were subjected to high-temperature calcination to produce inorganic fibers. After calcining at a temperature of 500 °C, the average diameter of the ZnO and Ce-doped ZnO nanofibers were determined to be 170 nm and 225 nm, respectively. The average grain size of the ZnO and Ce-doped ZnO nanofibers were about 50 nm and 57 nm, respectively. The microstructure, chemical bonding state and photoluminescence of the produced ZnO and Ce-doped ZnO nanofibers were investigated. The Ce-doped ZnO nanofiber can be assigned to the presence of Ce ions on substitutional sites of Zn ions and the Ce3+ state from X-ray photoelectron spectra. Compared with PL spectra of ZnO nanofibers, the peak position of the UV emission of the Ce-doped ZnO nanofibers is sharply suppressed while the green emission band is highly enhanced.

  1. Room temperature ferromagnetism in ZnO prepared by microemulsion

    Directory of Open Access Journals (Sweden)

    Qingyu Xu

    2011-09-01

    Full Text Available Clear room temperature ferromagnetism has been observed in ZnO powders prepared by microemulsion. The O vacancy (VO clusters mediated by the VO with one electron (F center contributed to the ferromagnetism, while the isolated F centers contributed to the low temperature paramagnetism. Annealing in H2 incorporated interstitial H (Hi in ZnO, and removed the isolated F centers, leading to the suppression of the paramagnetism. The ferromagnetism has been considered to originate from the VO clusters mediated by the Hi, leading to the enhancement of the coercivity. The ferromagnetism disappeared after annealing in air due to the reduction of Hi.

  2. Laser-induced grating in ZnO

    DEFF Research Database (Denmark)

    Ravn, Jesper N.

    1992-01-01

    A simple approach for the calculation of self-diffraction in a thin combined phase and amplitude grating is presented. The third order nonlinearity, the electron-hole recombination time, and the ambipolar diffusion coefficient in a ZnO crystal are measured by means of laser-induced self-diffracti......A simple approach for the calculation of self-diffraction in a thin combined phase and amplitude grating is presented. The third order nonlinearity, the electron-hole recombination time, and the ambipolar diffusion coefficient in a ZnO crystal are measured by means of laser-induced self...

  3. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  4. Raman scattering of quasimodes in ZnO

    International Nuclear Information System (INIS)

    Alarcon-Llado, E; Cusco, R; Artus, L; Jimenez, J; Wang, B; Callahan, M

    2008-01-01

    The angular dependence of the optical phonons of high-quality bulk ZnO has been systematically studied by means of Raman scattering. We report the observation of quasi-TO and quasi-LO modes for propagation directions covering the whole a-c mixing plane using a beveled ZnO single crystal sample. Scattering experiments performed in two different configuration geometries indicate that birefringence effects are not relevant for the phonon analysis in this material. The observed angular dependence of the quasimode frequencies is in good agreement with Loudon's model.

  5. Surface roughness of sputtered ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Y S [Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd. Shou-Feng, Hualien, Taiwan (China); Hsu, K C [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China); Huang, Y M [Institute of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Taiwan (China)

    2006-09-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D{sub ts}) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D{sub ts}, root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved.

  6. Surface roughness of sputtered ZnO films

    International Nuclear Information System (INIS)

    Lin, Y S; Hsu, K C; Huang, Y M

    2006-01-01

    ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D ts ) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D ts , root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved

  7. Properties of Mn-doped ZnO nanopowder

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Wehmann, H.H.; Al-Suleiman, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Schmid, H.; Mader, W. [Universitaet Bonn, Institut fuer Anorganische Chemie, Bonn (Germany); Bremers, H.; Hangleiter, A. [Technical University Braunschweig, Institute of Applied Physics, Braunschweig (Germany); Luedke, J.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

    2008-06-15

    The structural and magnetic properties of Mn-doped ZnO nanopowder are investigated and compared to undoped ZnO crystals. Mn incorporation leads to an increase in the lattice constants as revealed by X-ray diffraction measurements. An inhomogeneous distribution of the Mn atoms within the nanopowder was detected by energy-dispersive X-ray and electron-energy-loss spectroscopy measurements. Magnetic features are investigated by means of SQUID magnetometry on ensembles of powder particles as well as by magnetic force microscopy to study the behavior of single grains. (orig.)

  8. Piezoelectric ZnO nanostructure for energy harvesting

    CERN Document Server

    Leprince-Wang, Yamin

    2015-01-01

    Over the past decade, ZnO as an important II-VI semiconductor has attracted much attention within the scientific community over the world owing to its numerous unique and prosperous properties. This material, considered as a "future material", especially in nanostructural format, has aroused many interesting research works due to its large range of applications in electronics, photonics, acoustics, energy and sensing. The bio-compatibility, piezoelectricity & low cost fabrication make ZnO nanostructure a very promising material for energy harvesting.

  9. Optical function of bionic nanostructure of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Xu, C X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Zhu, G P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, Y J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore); Sun, X W [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Li, X [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Liu, J P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Cui, Y P [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2007-10-15

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction.

  10. Optical function of bionic nanostructure of ZnO

    International Nuclear Information System (INIS)

    Xu, C X; Zhu, G P; Liu, Y J; Sun, X W; Li, X; Liu, J P; Cui, Y P

    2007-01-01

    A novel bionic network nanostructure of zinc oxide (ZnO), which is similar to the microstructure of a butterfly wing, was first fabricated by a vapor-phase transport method using zinc powder as a source. These bionic nanostructures are composed of three ordered multi-aperture gratings. Similar to the optical effect of butterfly wings, the diffraction patterns of the bionic network of ZnO were observed. The mechanism of the optical function was discussed based on the physical model of multi-aperture diffraction

  11. Nature of native defects in ZnO.

    Science.gov (United States)

    Selim, F A; Weber, M H; Solodovnikov, D; Lynn, K G

    2007-08-24

    This study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental evidence that the donor nature of oxygen vacancy is approximately 0.7 eV. In addition, this work showed the Zn interstitial was not the donor in the as-grown ZnO and supported recent calculations that predicted hydrogen in an oxygen vacancy forms multicenter bonds and acts as a shallow donor.

  12. Performance of Cr-doped ZnO for acetone sensing

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hardan, N.H., E-mail: naif_imen@ukm.my [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Abdullah, M.J.; Aziz, A. Abdul [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2013-04-01

    Zinc oxide (ZnO) doped with chromium (Cr) was synthesized by reactive co-sputtering for gas sensing applications. The effect of varying the contents of Cr (from 1 to 4 at%) on the ZnO gas sensor response was studied. X-ray diffraction analysis reveals the high orientation of c-axis of the prepared films. The optimum operating temperature of the undoped ZnO was 400 °C and shifted to 300 °C for the Cr-doped ZnO under the acetone vapour. The 1% Cr doping ZnO gas sensor was most sensitive for the acetone vapour. The ability of the 1% Cr-doped ZnO to produce repeatable results under different acetone vapour concentrations was tested. The timing properties of the doped Cr ZnO gas sensor were 70 and 95 s for the rise and recovery time respectively.

  13. Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

    Science.gov (United States)

    Sun, Xu; Gu, Yousong; Wang, Xueqiang

    2012-08-01

    One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

  14. Controllable synthesis of periodic flower-like ZnO nanostructures on Si subwavelength grating structures

    International Nuclear Information System (INIS)

    Ko, Yeong Hwan; Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    We report on the periodic well-defined flower-like zinc oxide (ZnO) nanostructures (NSs) self-assembled through a simple hydrothermal method using silicon (Si) subwavelength grating (SWG) structures. The Si SWGs serve as building blocks for constructing a two-dimensional (2D) periodic architecture to integrate the one-dimensional (1D) ZnO NSs. Various controlled morphologies of ZnO NSs with high crystallinity are obtained by changing the growth conditions. For 1D ZnO NSs integrated on periodic hexagonal Si SWG structures, the reflection characteristics are investigated in comparison with the conventional ZnO nanorod (NR) arrays. For a three-dimensional (3D) flower-like ZnO NS on Si SWGs, a relatively low total reflectance of < 8% at wavelengths of 300-1050 nm is achieved compared to the ZnO NRs on Si substrate.

  15. In vitro antibacterial activity of ZnO and Nd doped ZnO nanoparticles against ESBL producing Escherichia coli and Klebsiella pneumoniae

    Science.gov (United States)

    Hameed, Abdulrahman Syedahamed Haja; Karthikeyan, Chandrasekaran; Ahamed, Abdulazees Parveez; Thajuddin, Nooruddin; Alharbi, Naiyf S.; Alharbi, Sulaiman Ali; Ravi, Ganasan

    2016-04-01

    Pure ZnO and Neodymium (Nd) doped ZnO nanoparticles (NPs) were synthesized by the co-precipitation method. The synthesized nanoparticles retained the wurtzite hexagonal structure. From FESEM studies, ZnO and Nd doped ZnO NPs showed nanorod and nanoflower like morphology respectively. The FT-IR spectra confirmed the Zn-O stretching bands at 422 and 451 cm-1 for ZnO and Nd doped ZnO NPs respectively. From the UV-VIS spectroscopic measurement, the excitonic peaks were found around 373 nm and 380 nm for the respective samples. The photoluminescence measurements revealed that the broad emission was composed of ten different bands due to zinc vacancies, oxygen vacancies and surface defects. The antibacterial studies performed against extended spectrum β-lactamases (ESBLs) producing strains of Escherichia coli and Klebsiella pneumoniae showed that the Nd doped ZnO NPs possessed a greater antibacterial effect than the pure ZnO NPs. From confocal laser scanning microscopic (CLSM) analysis, the apoptotic nature of the cells was confirmed by the cell shrinkage, disorganization of cell wall and cell membrane and dead cell of the bacteria. SEM analysis revealed the existence of bacterial loss of viability due to an impairment of cell membrane integrity, which was highly consistent with the damage of cell walls.

  16. Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2013-07-15

    ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

  17. Achieving ultrafine grained and homogeneous AA1050/ZnO nanocomposite with well-developed high angle grain boundaries through accumulative press bonding

    Energy Technology Data Exchange (ETDEWEB)

    Amirkhanlou, Sajjad, E-mail: s.amirkhanlou@aut.ac.ir [Young Researchers and Elite Club, Najafabad Branch, Islamic Azad University, Najafabad (Iran, Islamic Republic of); Ketabchi, Mostafa; Parvin, Nader; Askarian, Masoomeh [Department of Mining and Metallurgical Engineering, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Carreño, Fernando [Department of Physical Metallurgy, CENIM-CSIC, Av. Gregorio del Amo 8, 28040 Madrid (Spain)

    2015-03-11

    Aluminum matrix nanocomposites with 2 vol% ZnO nanoparticles were produced using accumulative press bonding (APB) as a very effective and novel severe plastic deformation process. Microstructural evaluation and mechanical properties of specimens were characterized by field-emission scanning electron microscopy (FE-SEM), scanning transmission electron microscopy (STEM), electron backscatter diffraction (EBSD) and tensile test. Microstructure of AA1050/ZnO nanocomposite showed a uniform distribution of ZnO nanoparticles throughout the aluminum matrix. STEM and EBSD observations revealed that ultrafine-grained Al/ZnO nanocomposite with the average grain size of <500 nm and well-developed high angle grain boundaries (80% high angle boundaries and 37° average misorientation angle) was successfully obtained by performing 14 cycles of the APB process. When the number of APB cycles increased the tensile strength of Al/ZnO nanocomposite improved and reached 228 MPa after 14 cycles, which was 2.6 and 1.3 times greater than the obtained values for annealed (raw material, 88 MPa) and monolithic aluminum (180 MPa), respectively.

  18. Luminescence properties of hydrothermally grown ZnO nanorods

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan

    2016-01-01

    Roč. 99, 1November (2016), s. 214-220 ISSN 0749-6036 R&D Projects: GA MŠk(CZ) LD14111; GA ČR GA15-17044S Institutional support: RVO:67985882 Keywords : Photoluminescence * Annealing * ZnO nanorods Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.123, year: 2016

  19. Pulsed-laser deposited ZnO for device applications

    NARCIS (Netherlands)

    King, S.L.; Gardeniers, Johannes G.E.; Boyd, I.W.

    1996-01-01

    The study investigates the growth by pulsed-laser deposition (PLD) of ZnO thin films for the eventual incorporation into piezo-electric actuators and other sensors being developed at the University of Twente. All films are purely c-axis oriented, and results are presented which suggest the

  20. ZnO processing for integrated optic sensors

    NARCIS (Netherlands)

    Horsthuis, Winfried H.G.

    1986-01-01

    ZnO thin films were sputter deposited onto oxidized silicon wafers. The film quality increased with increasing applied r.f. power. Characterization of the films was performed by measurements of the attenuation of the transverse electric TE0 optical guided mode. For an applied r.f. power of 2000 W,

  1. Random laser action in 3-D ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Miao, L.; Tanemura, S. [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, No. 2 Nengyuan Rd. Tianhe district, Guangzhou (China); Materials R and D Laboratory, Japan Fine Ceramics Centre, Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan); Yang, H.Y.; Lau, S.P. [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore); Xu, G. [Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, No. 2 Nengyuan Rd. Tianhe district, Guangzhou (China)

    2009-05-15

    Room-temperature ultraviolet random lasing with low threshold pumping power was successfully achieved by ZnO 3-D random-wall nanostructure fabricated on ZnO/SiO{sub 2}/Si substrate through a thermal chemical reaction and vapor transportation deposition method in a simple horizontal tube furnace from the mixed ZnO and graphite powders. The nanorods grown along c-axis on the substrate are coalesced to form the 3-D nano-wall with 80{proportional_to}100 nm in wall thickness and irregular height ranging of 95-250 nm. Mueller matrix spectroscopic ellipsometry reveals that evaluated refractive indices n(E) of ZnO nanowalls are well interpreted by taking account of the ratio between ZnO and void achieved by effective medium theory analysis and isotropic depolarization feature of the designated nanowalls. Random lasing action observed in the wide wavelength range between 375 and 395 nm is realized by coherent amplification of the closed-loop scattered light inside 3-D random-wall nanostructure. It is demonstrated that both transverse electric (TE) and transverse magnetic (TM) modes show the same threshold and pumping power dependent trend, while the intensity of TM lasing is weaker than that of TE due to the different scattering strength originated from the features of the inside of nanowall. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Laser nanostructuring of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  3. Hyperfine interaction study of F+ center in ZnO

    International Nuclear Information System (INIS)

    Gonzalez, C.; Galland, D.; Herve, A.

    1975-01-01

    Irradiation of ZnO monocrystals with 3MeV electron creates isolated zinc vacancies and F + centres. Analysis of angular variations of the ESR spectrum enabled the parameters of interaction of the F + centre with a Zn 67 nucleus to be determined [fr

  4. Co-Doped ZnO nanoparticles: minireview.

    Science.gov (United States)

    Djerdj, Igor; Jaglicić, Zvonko; Arcon, Denis; Niederberger, Markus

    2010-07-01

    Diluted magnetic semiconductors with a Curie temperature exceeding 300 K are promising candidates for spintronic devices and spin-based electronic technologies. We review recent achievements in the field of one of them: Co-doped ZnO at the nanoparticulate scale.

  5. ZnO nanostructures induced by microwave plasma

    Directory of Open Access Journals (Sweden)

    Khaled A. Elsayed

    2015-07-01

    Full Text Available Microwave induced hydrogen plasma is used to fabricate ZnO thin films at low ambient gas pressure and controlled oxygen content in the gas mixture. The emission spectra have been observed. Optical emission spectroscopy was used to identify the chemical reaction mechanism. Structural quality of the so-obtained nanoparticles was studied by X-ray diffraction (XRD and high resolution scanning electron microscopy (SEM. SEM results showed that nanorods were formed in the process, and XRD results along with nanorod dimensions obtained from SEM are consistent with the formation of single and poly-crystalline ZnO nanorods. The alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the glass substrate. The minimum crystallite grain size as obtained from the SEM measurements was ∼24 nm and the average diameter is 70 nm with a length of 1–2 μm. The deposited ZnO thin films have a wide energy band gap that equals ∼3 eV.

  6. Characterization of Mn doped ZnO nanopowder

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, Eva; Bakin, Andrey; Al-Suleiman, Mohamed; Wehmann, Hergo-Heinrich; Waag, Andreas [Institute of Semiconductor Technology, TU Braunschweig (Germany); Schmid, Herbert; Mader, Werner [Institute for Inorganic Chemistry, University Bonn (Germany); Bremers, Heiko; Hangleiter, Andreas [Institute of Applied Physics, TU Braunschweig (Germany)

    2008-07-01

    In the quest of materials for spintronic applications, diluted magnetic semiconductors recently attracted much attention. The main challenge is finding a ferromagnetic material with Curie temperature T{sub c}>300 K whose magnetic properties can be controlled electrically. The interest was particularly focused on Zn(TM)O since theoretical calculations predict that ZnO containing Mn could exhibit ferromagnetism with T{sub c} above room temperature. In the present study, the structural and magnetic properties of Mn doped ZnO nanopowder are investigated and compared to undoped ZnO crystals. Doping of ZnO with Mn results in increased lattice constants as revealed by XRD. However, an inhomogeneous distribution of the Mn dopants within the nanopowder was revealed by energy-dispersive X-ray and electron energy-loss spectroscopy. Magnetic properties are investigated by means of SQUID measurements on aggregates of powder particles as well as by MFM to study the behavior of single grains. The MFM image differs significantly from the topography as imaged by AFM and suggests the existence of long-ranging magnetic signals emerging from the sample.

  7. Electrical properties of ZnO nanorods and layers

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

    2007-07-01

    ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

  8. NANO CRYSTALLINE ZnO CATALYZED ONE POT THREE ...

    African Journals Online (AJOL)

    advances in nanoscience and nanotechnology have led to new research interests in using nanometer-sized particles as .... dichloromethane and then filtered to separate the nano ZnO catalyst. ..... 104, 4063. 31. Matsubara, K.; Fons, P.; Iwata, K.; Yamada, A.; Sakurai, K.; Tampo, N.; Niki, S. Thin Solid. Films 2003, 431, 369.

  9. Synthesis and characterization of ZnO nanostructures with varying ...

    Indian Academy of Sciences (India)

    2017-05-13

    May 13, 2017 ... Composition of the reactant solution, pH and temperature ... due to the broad spectrum of UV radiation absorption, supe- ... In addition, ZnO is very useful to cure various other skin ... be used as promising candidate for coating of orthopedic ... tape and then coated with gold for 40 s in an auto-fine coater.

  10. Mechanical, microstructure and electrical properties of ternary ZnO ...

    Indian Academy of Sciences (India)

    V2O5–Mn3O4 (ZVM)-based varis- tors were investigated at different sintering temperatures of 825–950◦C. The microstructure of the samples consists mainly of ZnO grains with Zn3(VO4)2, ZnV2O4 and VO2 as minor secondary phases.

  11. Direct Precipitation and Characterization of ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    A. H. Moharram

    2014-01-01

    Full Text Available ZnO nanoparticles are prepared through hydrolysis and condensation of zinc acetate dihydrate by potassium hydroxide in alcoholic medium at low temperatures. Thermal gravimetric analysis (TGA of the precursor is made in order to specify the temperature range over which the weight loss and thermal effect are significant. X-ray diffraction of the as-prepared specimens shows that the hexagonal (a=3.2459 Å, c=5.1999 Å structure is the predominant crystallographic structure. According to Scherer’s formula, the average size of the nanoparticles is 22.4 ± 0.6 nm. The structural properties of the synthesized ZnO nanoparticles have been confirmed using the TEM micrographs. The optical energy gap of the ZnO nanoparticles, as obtained from applying Tauc’s equation, is equal to 3.52 eV, which is higher than that of the bulk material. Absorption peak of the as-prepared sample is 298 nm which is highly blue shifted as compared to the bulk (360 nm. Large optical energy gap and highly blue shifted absorption edge confirm that the prepared ZnO nanoparticle exhibits strong quantum confinement effect.

  12. The Applications of Morphology Controlled ZnO in Catalysis

    Directory of Open Access Journals (Sweden)

    Yuhai Sun

    2016-11-01

    Full Text Available Zinc oxide (ZnO, with the unique chemical and physical properties of high chemical stability, broad radiation absorption range, high electrochemical coupling coefficient, and high photo-stability, is an attractive multifunctional material which has promoted great interest in many fields. What is more, its properties can be tuned by controllable synthesized morphologies. Therefore, after the success of the abundant morphology controllable synthesis, both the morphology-dependent ZnO properties and their related applications have been extensively investigated. This review concentrates on the properties of morphology-dependent ZnO and their applications in catalysis, mainly involved reactions on green energy and environmental issues, such as CO2 hydrogenation to fuels, methanol steam reforming to generate H2, bio-diesel production, pollutant photo-degradation, etc. The impressive catalytic properties of ZnO are associated with morphology tuned specific microstructures, defects or abilities of electron transportation, etc. The main morphology-dependent promotion mechanisms are discussed and summarized.

  13. Electronic properties of assemblies of zno quantum dots

    NARCIS (Netherlands)

    Roest, Aarnoud Laurens

    2003-01-01

    Electron transport in an assembly of ZnO quantum dots has been studied using an electrochemically gated transistor. The electron mobility shows a step-wise increase as a function of the electron occupation per quantum dot. When the occupation number is below two, transport occurs by tunnelling

  14. Photoluminescence of spray pyrolysis deposited ZnO nanorods

    Directory of Open Access Journals (Sweden)

    Mikli Valdek

    2011-01-01

    Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

  15. Red luminescence from ZnO : Cr nanophosphors under visible ...

    Indian Academy of Sciences (India)

    Administrator

    400 nm and blue emission peak at 447 nm. Cr3+-doped ZnO shows .... The CIE colour co-ordinates measured from PL emis- ... 'BLUE' emission, whereas CIE x and y values for Cr3+- .... EPR studies of transition metal and rare earth ion doped.

  16. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Synthesis and characterization of thermally oxidized ZnO films. A P RAMBU1,* and N IFTIMIE2 .... R. −. Δ. = = (1) where Ra is the sensor resistance in the air and Rg is the .... ple, Aida and coworkers (2006) reported that the total oxidation is ...

  17. Chronic toxicity of ZnO nanoparticles, non-nano ZnO and ZnCl2 to Folsomia candida (Collembola) in relation to bioavailability in soil

    International Nuclear Information System (INIS)

    Kool, Pauline L.; Diez Ortiz, Maria; Gestel, Cornelis A.M. van

    2011-01-01

    The chronic toxicity of zinc oxide nanoparticles (ZnO-NP) to Folsomia candida was determined in natural soil. To unravel the contribution of particle size and free zinc to NP toxicity, non-nano ZnO and ZnCl 2 were also tested. Zinc concentrations in pore water increased with increasing soil concentrations, with Freundlich sorption constants K f of 61.7, 106 and 96.4 l/kg (n = 1.50, 1.34 and 0.42) for ZnO-NP, non-nano ZnO and ZnCl 2 respectively. Survival of F. candida was not affected by ZnO-NP and non-nano ZnO at concentrations up to 6400 mg Zn/kg d.w. Reproduction was dose-dependently reduced with 28-d EC50s of 1964, 1591 and 298 mg Zn/kg d.w. for ZnO-NP, non-nano ZnO and ZnCl 2 , respectively. The difference in EC50s based on measured pore water concentrations was small (7.94-16.8 mg Zn/l). We conclude that zinc ions released from NP determine the observed toxic effects rather than ZnO particle size. - Highlights: → ZnO nanoparticles and non-nano ZnO were equally toxic to Folsomia candida in soil. → Pore water from soil spiked with ZnO nanoparticles showed saturation with zinc suggesting aggregation. → Pore water based EC50 values for ZnO nanoparticles and ZnCl 2 were similar. → ZnO nanoparticle toxicity in soil was most probably due to Zn dissolution from the nanoparticles. - ZnO nanoparticle toxicity to springtails in soil can be explained from Zn dissolution but not from particle size.

  18. Hydrothermal growth of upright-standing ZnO sheet microcrystals

    International Nuclear Information System (INIS)

    Shi, Ruixia; Yang, Ping; Dong, Xiaobin; Jia, Changchao; Li, Jia

    2014-01-01

    Highlights: • Upright-standing ZnO sheet microcrystals were hydrothermally fabricated. • The ZnO sheets were prepared with sodium oxalate at 70 °C without any surfactant. • The preferable adsorption of oxalate anions causes the formation of ZnO sheet. • The continuous growth in six directions leads to the formation of hexagonal sheets. - Abstract: Large-scale upright-standing ZnO sheet microcrystals were fabricated on Zn substrate using sodium oxalate as structure-directing agent by a hydrothermal method at low temperature (70 °C) without any surfactant. The sheets are about 3–5 μm in dimension and 100–300 nm in thickness. The strong and narrow diffraction peaks of ZnO indicate that the sample has a good crystallinity and size. The morphology of sheet-like ZnO varied with the concentrations of sodium oxalate and reaction time. The sheet-like ZnO would transform into rod-like ones when sodium oxalate was substituted by equivalent sodium acetate. The formation of sheet-like ZnO is attributed to the preferable adsorption of oxalate anions on (0 0 0 1) face of ZnO, which inhibits the intrinsic growth of ZnO. Additionally, the continuous growth in six (0 1 −1 0) directions that have the lowest surface energy leads to the formation of hexagonal sheets

  19. Orientation-dependent chemistry and band-bending of Ti on polar ZnO surfaces.

    Science.gov (United States)

    Borghetti, Patrizia; Mouchaal, Younes; Dai, Zongbei; Cabailh, Gregory; Chenot, Stéphane; Lazzari, Rémi; Jupille, Jacques

    2017-04-19

    Orientation-dependent reactivity and band-bending are evidenced upon Ti deposition (1-10 Å) on polar ZnO(0001)-Zn and ZnO(0001[combining macron])-O surfaces. At the onset of the Ti deposition, a downward band-bending was observed on ZnO(0001[combining macron])-O while no change occurred on ZnO(0001)-Zn. Combining this with the photoemission analysis of the Ti 2p core level and Zn L 3 (L 2 )M 45 M 45 Auger transition, it is established that the Ti/ZnO reaction is of the form Ti + 2ZnO → TiO 2 + 2Zn on ZnO(0001)-Zn and Ti + yZnO → TiZn x O y + (y - x)Zn on ZnO(0001[combining macron])-O. Consistently, upon annealing thicker Ti adlayers, the metallic zinc is removed to leave ZnO(0001)-Zn surfaces covered with a TiO 2 -like phase and ZnO(0001[combining macron])-O surfaces covered with a defined (Ti, Zn, O) compound. Finally, a difference in the activation temperature between the O-terminated (500 K) and Zn-terminated (700 K) surfaces is observed, which is tentatively explained by different electric fields in the space charge layer at ZnO surfaces.

  20. Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Iwan, S., E-mail: iwan-sugihartono@unj.ac.id [Jurusan Fisika, FMIPA-UNJ, Rawamangun, Jakarta (Indonesia); Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Fauzia, Vivi [Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Umar, A. A. [Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, UKM Bangi, Selangor (Malaysia); Sun, X. W. [School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue (Singapore)

    2016-04-19

    Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffraction peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.

  1. Effect of ALD surface treatment on structural and optical properties of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jin-Tak [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, Hyukhyun, E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, Won-Jae [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of)

    2013-07-01

    In this study, we report on the improvement of the optical and structural properties of ZnO nanorods using atomic layer deposition (ALD) on seed ZnO nanorods. After the initial growth of ZnO seed nanorods by hydrothermal synthesis for 1 h, a ZnO layer with a thickness of 10 nm was deposited on the initial ZnO seed nanorods using ALD. Then ZnO was further grown by hydrothermal synthesis for 4 h. The samples were characterized using room temperature photoluminescence (PL), field emission-scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). From this experiment, it was found that the ZnO nanorods with the ALD surface treatment show improved optical and structural properties when compared with the ZnO nanorods grown only by hydrothermal synthesis. The ZnO nanorods with the ALD surface treatment show about 2.7 times higher XRD (0 0 2) peak intensity, about 2.64 times higher PL NBE peak intensity, and about 3.1 times better NBE/DLE ratio than the ZnO nanorods without an ALD surface treatment.

  2. Structural interpretation of chemically synthesized ZnO nanorod and its application in lithium ion battery

    International Nuclear Information System (INIS)

    Kundu, Samapti; Sain, Sumanta; Yoshio, Masaki; Kar, Tanusree; Gunawardhana, Nanda; Pradhan, Swapan Kumar

    2015-01-01

    Graphical abstract: - Highlights: • ZnO nanorods are synthesized at room temperature via a simple chemical route. • Growth direction of ZnO nanorods has been determined along 〈0 0 2〉. • ZnO nanorods constructed anode shows a high discharge capacity in first cycle. • It retains good reversible capacity compared to other ZnO morphologies. - Abstract: ZnO nanorods are synthesized at room temperature via a simple chemical route without using any template or capping agent and its importance is evaluated as a suitable candidate for anode material in lithium ion battery. Structural and microstructure characterizations of these nanorods are made by analyzing the X-ray diffraction data employing the Rietveld method of powder structure refinement. It reveals that the ZnO nanorods are grown up with a preferred orientation and elongated along 〈0 0 2〉. FESEM images reveal that these uniform cylindrical shaped nanorods are of different lengths and diameters. These synthesized ZnO nanorods are tested as an anode material for lithium ion batteries. The nano grain size of the ZnO rods results in less volume expansion and/or contraction during the alloying/de-alloying process and causes in good cyclability. In addition, synthesized ZnO nanorods deliver high charge/discharge capacities compared to other reported ZnO materials

  3. Structural interpretation of chemically synthesized ZnO nanorod and its application in lithium ion battery

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Samapti; Sain, Sumanta [Materials Science Division, Department of Physics, The University of Burdwan, Golapbag, Burdwan 713104, West Bengal (India); Yoshio, Masaki [Advanced Research and Education Centre, Saga University, 1341 Yoga-machi, Saga 840-0047 (Japan); Kar, Tanusree [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, West Bengal (India); Gunawardhana, Nanda, E-mail: nandagunawardhana@pdn.ac.lk [International Research Centre, Senate Building, University of Peradeniya, Peradeniya 20400 (Sri Lanka); Pradhan, Swapan Kumar, E-mail: skpradhan@phys.buruniv.ac.in [Materials Science Division, Department of Physics, The University of Burdwan, Golapbag, Burdwan 713104, West Bengal (India)

    2015-02-28

    Graphical abstract: - Highlights: • ZnO nanorods are synthesized at room temperature via a simple chemical route. • Growth direction of ZnO nanorods has been determined along 〈0 0 2〉. • ZnO nanorods constructed anode shows a high discharge capacity in first cycle. • It retains good reversible capacity compared to other ZnO morphologies. - Abstract: ZnO nanorods are synthesized at room temperature via a simple chemical route without using any template or capping agent and its importance is evaluated as a suitable candidate for anode material in lithium ion battery. Structural and microstructure characterizations of these nanorods are made by analyzing the X-ray diffraction data employing the Rietveld method of powder structure refinement. It reveals that the ZnO nanorods are grown up with a preferred orientation and elongated along 〈0 0 2〉. FESEM images reveal that these uniform cylindrical shaped nanorods are of different lengths and diameters. These synthesized ZnO nanorods are tested as an anode material for lithium ion batteries. The nano grain size of the ZnO rods results in less volume expansion and/or contraction during the alloying/de-alloying process and causes in good cyclability. In addition, synthesized ZnO nanorods deliver high charge/discharge capacities compared to other reported ZnO materials.

  4. Structure and photoluminescence properties of Ag-coated ZnO nano-needles

    Energy Technology Data Exchange (ETDEWEB)

    Li Xiaozhu, E-mail: Lixiaozhu1019@21cn.com [Department of Physics, Shaoguan University, Shaoguan, Guangdong 512005 (China) and Department of Physics and Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan, Hubei 430072 (China); Wang Yongqian [Engineering Research Center of Nano-Geomaterials of Ministry of Education (China University of Geosciences), Wuhan, Hubei 430074 (China)

    2011-05-12

    Highlights: > ZnO nano-needles were synthesized by thermal oxidation. > Their surfaces were coated with Ag by pulse electro-deposition technique. > The uncoated and coated ZnO nano-needles were characterized. > The results showed that the prepared ZnO nano-needles have been coated with Ag successfully. > The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the Ag-coated ZnO nano-needles can increase the absorption of UV light. - Abstract: A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 {mu}m. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.

  5. Structure and photoluminescence properties of Ag-coated ZnO nano-needles

    International Nuclear Information System (INIS)

    Li Xiaozhu; Wang Yongqian

    2011-01-01

    Highlights: → ZnO nano-needles were synthesized by thermal oxidation. → Their surfaces were coated with Ag by pulse electro-deposition technique. → The uncoated and coated ZnO nano-needles were characterized. → The results showed that the prepared ZnO nano-needles have been coated with Ag successfully. → The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the Ag-coated ZnO nano-needles can increase the absorption of UV light. - Abstract: A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 μm. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.

  6. Hydrothermal growth and characterizations of dandelion-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, The Institute of Science, Madam Cama Road, Mumbai 400 032, (M.S.) (India); Lu, Shih-Yuan, E-mail: sylu@nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, ROC (China)

    2013-12-05

    Highlights: •The simple, low cost, environmental benign hydrothermal method has been used to synthesize ZnO nanostructure. •The SEM images reveal the interesting 3D dandelion-like morphology of synthesized ZnO nanostructure. The SAED pattern and HRTEM study confirms that the ZnO nanorods are single crystalline. •Change in experimental conditions dramatically changes the morphologies of the synthesized ZnO. •The room temperature PL study reveals strong band edge emission along with much weaker defect related blue emission. •The reaction and growth mechanism of ZnO nanostructure is also discussed. -- Abstract: Three dimensional (3D) ZnO nanostructures have been synthesized by using a facile low-cost hydrothermal method under mild conditions. Aqueous alkaline ammonia solution of Zn(CH{sub 3}COO){sub 2} is used to grow 3D ZnO nanostructures. The X-ray diffraction (XRD) study reveals the well crystallized hexagonal structure of ZnO. SEM observations depict that the ZnO product grows in the form of nanorods united together to form 3D dandelion-like nanostructures. The elemental analysis using EDAX technique confirms the stoichiometry of the ZnO nanorods. The product exhibits special optical properties with red-shifts in optical absorption peak (376 nm) as compared with those of conventional ZnO nanorods. PL spectra show emission peak (396 nm) at the near band-edge and peak (464 nm) originated from defects states that are produced during the hydrothermal growth. TEM and SAED results reveal single crystalline structure of the synthesized product. The reaction and growth mechanisms on the morphological evolution of the ZnO nanostructures are discussed. The morphology of ZnO product is investigated by varying the reaction time, temperature, and type of complexing reagent.

  7. Synthesis, characterization and photocatalysis enhancement of Eu2O3-ZnO mixed oxide nanoparticles

    Science.gov (United States)

    Mohamed, W. S.; Abu-Dief, Ahmed M.

    2018-05-01

    Pure ZnO nanoparticles (NPs) and mixed Eu2O3 and ZnO NPs with different Eu2O3 ratios (5%, 10%, and 15%) were synthesized by a precipitation method under optimum conditions. The synthesized samples were characterized by means of X-ray diffraction, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy, transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, and UV-vis diffuse reflectance spectroscopy. The as-synthesized ZnO NPs exhibit high phase purity and a highly crystalline wurtzite ZnO structure. The mixed Eu2O3 and ZnO NPs exhibit a Eu2O3 zinc blend phase in addition to the wurtzite phase of pure ZnO, confirming the high purity and good crystallinity of the as-synthesized samples. The high-purity formation of ZnO and Eu2O3 phases was confirmed by FTIR and Raman spectra. Microstructural analysis by SEM and TEM confirmed the sphere-like morphology with different particle sizes (29-40 nm) of the as-synthesized samples. The photocatalytic activities of pure ZnO NPs and mixed Eu2O3 and ZnO NPs for the degradation of methylene blue were evaluated under ultraviolet (UV) irradiation. The results show that Eu2O3 plays an important role in the enhancement of the photocatalytic properties of ZnO NPs. We found that mixed 5% Eu2O3 and ZnO NPs exhibit the highest photocatalytic activity (degradation efficiency of 96.5% after 180 min of UV irradiation) as compared with pure ZnO NPs (degradation efficiency of 80.3% after 180 min of UV irradiation). The increased photocatalytic activity of the optimum mixed Eu2O3 and ZnO NPs is due to the high crystallinity, high surface area with small particle size, and narrow energy gap.

  8. Enormous enhancement of ZnO nanorod photoluminescence

    International Nuclear Information System (INIS)

    Wang, Y.H.; Duan, W.J.; Wu, Z.L.; Zheng, D.; Zhou, X.W.; Zhou, B.Y.; Dai, L.J.; Wang, Y.S.

    2012-01-01

    ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation. - Highlights: ► ZnO nanorod arrays were grown on quartz slices in solution at 90 °C. ► The nanorods were capped by ZnO:Mg layers to form core/shell structures. ► ZnO:MgO shells suppress the green emission and enhance the UV emission intensity by 38 times. ► The enhancement depends on the Mg content in the shells. ► Exposing the nanorods to 325 laser beam improves the UV emission efficiently. ► Capping and 325 nm laser beam irradiation could enhance the nanorod UV emission intensity by 71 times.

  9. Function of NaOH hydrolysis in electrospinning ZnO nanofibers via using polylactide as templates

    International Nuclear Information System (INIS)

    Liu, Mengzhu; Wang, Yongpeng; Cheng, Zhiqiang; Song, Lihua; Zhang, Mingyue; Hu, Meijuan; Li, Junfeng

    2014-01-01

    Graphical abstract: - Highlights: • PLA was used as templates to electrospin ZnO nanofibers for the first time. • Without NaOH hydrolysis, only ZnO film was prepared. • Under function of NaOH, ZnO nanofibers were obtained. • The function of NaOH was discussed. • ZnO nanofibers showed much higher photocatalytical efficiency than ZnO film. - Abstract: Mixture of polylactide (8 wt%), zinc acetate (6 wt%) and hexafluoroisopropanol was first used as electrospinning solution to fabricate ZnO nanofibers. Unfortunately, after direct calcination of the precursor polylactide/zinc acetate nanofibers, only ZnO film was prepared. Surprisingly, when the precursor fibers were pre-hydrolyzed with NaOH, ZnO nanofibers with diameter of 678 nm were obtained. The mechanism analysis showed that the preserve of fiber structure was attributed to the formation of zinc polylactic acid in the process of hydrolyzation. After characterized by scanning electron microscope and transmission electron microscope, the ZnO film was found to be an aggregation of irregular nanoparticles and the ZnO nanofiber was a necklace-like arrangement of cylindrical grains. X-ray diffraction and photoluminescence measurements indicated that the crystalline quality of the ZnO nanofibers was higher than the film. Furthermore, photocatalytic performance of the ZnO samples was investigated. Comparing with ZnO film, ZnO nanofibers exhibited much higher activity

  10. Green method for producing hierarchically assembled pristine porous ZnO nanoparticles with narrow particle size distribution

    International Nuclear Information System (INIS)

    Escobedo-Morales, A.; Téllez-Flores, D.; Ruiz Peralta, Ma. de Lourdes; Garcia-Serrano, J.; Herrera-González, Ana M.; Rubio-Rosas, E.; Sánchez-Mora, E.; Olivares Xometl, O.

    2015-01-01

    A green method for producing pristine porous ZnO nanoparticles with narrow particle size distribution is reported. This method consists in synthesizing ZnO 2 nanopowders via a hydrothermal route using cheap and non-toxic reagents, and its subsequent thermal decomposition at low temperature under a non-protective atmosphere (air). The morphology, structural and optical properties of the obtained porous ZnO nanoparticles were studied by means of powder X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and nitrogen adsorption–desorption measurements. It was found that after thermal decomposition of the ZnO 2 powders, pristine ZnO nanoparticles are obtained. These particles are round-shaped with narrow size distribution. A further analysis of the obtained ZnO nanoparticles reveals that they are hierarchical self-assemblies of primary ZnO particles. The agglomeration of these primary particles at the very early stage of the thermal decomposition of ZnO 2 powders provides to the resulting ZnO nanoparticles a porous nature. The possibility of using the synthesized porous ZnO nanoparticles as photocatalysts has been evaluated on the degradation of rhodamine B dye. - Highlights: • A green synthesis method for obtaining porous ZnO nanoparticles is reported. • The obtained ZnO nanoparticles have narrow particle size distribution. • This method allows obtaining pristine ZnO nanoparticles avoiding unintentional doping. • A growth mechanism for the obtained porous ZnO nanoparticles is proposed

  11. Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, Ki-Wook; Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung-Nam

    2013-01-01

    We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolar m-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (∼ 380 nm) and the deep level emission (∼ 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. - Highlights: • Growth and characterization of a-, c- and m-plane ZnO film by atomic layer deposition. • The a-plane ZnO represented better optical and electrical properties than c-plane ZnO. • The m-plane ZnO exhibited poorer optical and electrical properties than c-plane ZnO

  12. Exciton polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

    Science.gov (United States)

    Chichibu, S. F.; Uedono, A.; Tsukazaki, A.; Onuma, T.; Zamfirescu, M.; Ohtomo, A.; Kavokin, A.; Cantwell, G.; Litton, C. W.; Sota, T.; Kawasaki, M.

    2005-04-01

    processes in L-MBE ZnO were studied using time-resolved PL making a connection with the results of positron annihilation measurement. Free excitonic PL intensity at room temperature naturally increased with the increase in nonradiative lifetime (τnr). The value of τnr increased and density or size of Zn vacancies (VZn) decreased with increasing growth temperature (Tg) in heteroepitaxial films grown on a ScAlMgO4 substrate, and the use of homoepitaxial substrates further reduced VZn density. The value of τnr was shown to increase with the decrease in gross density of positively and negatively charged and neutral point defects including complexes rather than with the decrease in VZn density. The results indicate that the nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VZn, such as VZn-defect complexes. As a result of defect elimination by growing the films at high Tg followed by subsequent post-growth in situ annealing, combined with the use of high-temperature-annealed ZnO self-buffer layer, a record long τnr for spontaneous emission of 3.8 ns was obtained at room temperature. By using progressively improving epitaxial growth methods, the polariton laser effect is expected to be observed at room temperature in the near future.

  13. Sparking deposited ZnO nanoparticles as double-layered photoelectrode in ZnO dye-sensitized solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Hongsith, Kritsada [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand); Hongsith, Niyom [Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand); School of Science, University of Phayao, Phayao 56000 (Thailand); Wongratanaphisan, Duangmanee; Gardchareon, Atcharawon; Phadungdhitidhada, Surachet [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP center), CHE, Bangkok 10400 (Thailand); Singjai, Pisith [Department of Physics and Materials Science, Faculty of Scie